Corrosion Behavior of Bi2Te3-Based Thermoelectric Materials Fabricated by Melting Method

NASA Astrophysics Data System (ADS)

Kohri, Hitoshi; Yagasaki, Takayoshi

2017-05-01

Bi2Te3-based compounds are used practically as thermoelectric cooling materials. Bi2Te3-Sb2Te3 or Bi2Te3-Bi2Se3 pseudobinary system compounds are usually applied as p- or n-type material, respectively. Atmospheric water may condense on the surface of thermoelectric materials constituting Peltier modules, depending on their operating environment. Very few studies on the corrosion resistance of Bi2Te3-based compounds have been reported in literature. Moreover, the detailed corrosion behavior of Bi2Te3-based compounds remains unclear. In this study, the corrosion behavior of cleavage planes of Bi2Te3-based compounds fabricated by a melting method has been investigated. Bi2Te3, Sb2Te3, and Bi2Se3 were prepared by the vertical Bridgman method, respectively. Their electrochemical properties evaluated at room temperature by cyclic voltammetry in a standard three-electrode cell with naturally aerated 0.6 mass% or 3.0 mass% NaCl solution as working electrolyte. The c-planes of Bi2Te3 and Sb2Te3 exhibited similar corrosion potential. The corrosion potential of c-plane of Bi2Se3 was more cathodic compared with that of the telluride. The passive current density of the Bi2Te3-based compounds was single or double digit lower than that of stainless steel. X-ray photoelectron spectroscopy results for the electrolyte after testing indicated the possibility that a corrosion product diffuses to the environment including NaCl for Sb2Te3 and Bi2Se3.

Pseudogap and proximity effect in the Bi2Te3/Fe1+yTe interfacial superconductor.

PubMed

He, M Q; Shen, J Y; Petrović, A P; He, Q L; Liu, H C; Zheng, Y; Wong, C H; Chen, Q H; Wang, J N; Law, K T; Sou, I K; Lortz, R

2016-09-02

In the interfacial superconductor Bi2Te3/Fe1+yTe, two dimensional superconductivity occurs in direct vicinity to the surface state of a topological insulator. If this state were to become involved in superconductivity, under certain conditions a topological superconducting state could be formed, which is of high interest due to the possibility of creating Majorana fermionic states. We report directional point-contact spectroscopy data on the novel Bi2Te3/Fe1+yTe interfacial superconductor for a Bi2Te3 thickness of 9 quintuple layers, bonded by van der Waals epitaxy to a Fe1+yTe film at an atomically sharp interface. Our data show highly unconventional superconductivity, which appears as complex as in the cuprate high temperature superconductors. A very large superconducting twin-gap structure is replaced by a pseudogap above ~12 K which persists up to 40 K. While the larger gap shows unconventional order parameter symmetry and is attributed to a thin FeTe layer in proximity to the interface, the smaller gap is associated with superconductivity induced via the proximity effect in the topological insulator Bi2Te3.

Pseudogap and proximity effect in the Bi2Te3/Fe1+yTe interfacial superconductor

PubMed Central

He, M. Q.; Shen, J. Y.; Petrović, A. P.; He, Q. L.; Liu, H. C.; Zheng, Y.; Wong, C. H.; Chen, Q. H.; Wang, J. N.; Law, K. T.; Sou, I. K.; Lortz, R.

2016-01-01

In the interfacial superconductor Bi2Te3/Fe1+yTe, two dimensional superconductivity occurs in direct vicinity to the surface state of a topological insulator. If this state were to become involved in superconductivity, under certain conditions a topological superconducting state could be formed, which is of high interest due to the possibility of creating Majorana fermionic states. We report directional point-contact spectroscopy data on the novel Bi2Te3/Fe1+yTe interfacial superconductor for a Bi2Te3 thickness of 9 quintuple layers, bonded by van der Waals epitaxy to a Fe1+yTe film at an atomically sharp interface. Our data show highly unconventional superconductivity, which appears as complex as in the cuprate high temperature superconductors. A very large superconducting twin-gap structure is replaced by a pseudogap above ~12 K which persists up to 40 K. While the larger gap shows unconventional order parameter symmetry and is attributed to a thin FeTe layer in proximity to the interface, the smaller gap is associated with superconductivity induced via the proximity effect in the topological insulator Bi2Te3. PMID:27587000

Influence of Element Substitution on Corrosion Behavior of Bi2Te3-Based Compounds

NASA Astrophysics Data System (ADS)

Kohri, Hitoshi; Yagasaki, Takayoshi

2018-02-01

Atmospheric water may condense on the surface of Bi2Te3-based compounds constituting the Peltier module, depending on the operating environment used. In the stage of disposal, Bi2Te3-based compounds may come into contact with water in waste disposal sites. There are very few publications about the influence of condensed water on Peltier modules. Bi2Te3-Sb2Te3 or Bi2Te3-Bi2Se3 pseudo binary system compounds are used as p-type material or n-type material, respectively. The lattice distortion will be induced in the crystal of Bi2Te3-based compounds by element substitution due to the reduction in their thermal conductivity. However, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds remains unclear. In this study, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds with practical compositions has been investigated. Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 was prepared by the vertical Bridgman method. The electrochemical properties at room temperature were evaluated by cyclic voltammetry in a standard three-electrode cell. The working electrolyte was a naturally aerated 0.6 or 3.0 mass% NaCl solution. From the tendency for corrosion potential for all the samples, the corrosion sensitivity of ternary compounds was slightly higher than that of binary compounds. From the trend of current density, it was found that Bi0.5Sb1.5Te3 had a corrosion resistance intermediate between Bi2Te3 and Sb2Te3. On the other hand, corrosion resistance was affected despite a small amount of Se substitution, and the corrosion resistance of Bi2Te2.85Se0.15 was close to or lower than that of Bi2Se3. From the observation results of the corrosion products, the trends of morphology and composition of corrosion products for Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 were consistent with those of Sb2Te3 or Bi2Se3, respectively. From the results of x-ray photoelectron spectroscopy for the electrolyte after testing, the possibility that a

Influence of Element Substitution on Corrosion Behavior of Bi2Te3-Based Compounds

NASA Astrophysics Data System (ADS)

Kohri, Hitoshi; Yagasaki, Takayoshi

2018-06-01

Atmospheric water may condense on the surface of Bi2Te3-based compounds constituting the Peltier module, depending on the operating environment used. In the stage of disposal, Bi2Te3-based compounds may come into contact with water in waste disposal sites. There are very few publications about the influence of condensed water on Peltier modules. Bi2Te3-Sb2Te3 or Bi2Te3-Bi2Se3 pseudo binary system compounds are used as p-type material or n-type material, respectively. The lattice distortion will be induced in the crystal of Bi2Te3-based compounds by element substitution due to the reduction in their thermal conductivity. However, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds remains unclear. In this study, the influence of element substitution on the corrosion behavior of Bi2Te3-based compounds with practical compositions has been investigated. Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 was prepared by the vertical Bridgman method. The electrochemical properties at room temperature were evaluated by cyclic voltammetry in a standard three-electrode cell. The working electrolyte was a naturally aerated 0.6 or 3.0 mass% NaCl solution. From the tendency for corrosion potential for all the samples, the corrosion sensitivity of ternary compounds was slightly higher than that of binary compounds. From the trend of current density, it was found that Bi0.5Sb1.5Te3 had a corrosion resistance intermediate between Bi2Te3 and Sb2Te3. On the other hand, corrosion resistance was affected despite a small amount of Se substitution, and the corrosion resistance of Bi2Te2.85Se0.15 was close to or lower than that of Bi2Se3. From the observation results of the corrosion products, the trends of morphology and composition of corrosion products for Bi0.5Sb1.5Te3 or Bi2Te2.85Se0.15 were consistent with those of Sb2Te3 or Bi2Se3, respectively. From the results of x-ray photoelectron spectroscopy for the electrolyte after testing, the possibility that a

Microstructure and phase composition of hypoeutectic Te-Bi alloy as evaporation source for photoelectric cathode

NASA Astrophysics Data System (ADS)

Wang, Bao-guang; Yang, Wen-hui; Gao, Hong-ye; Tian, Wen-huai

2018-05-01

A hypoeutectic 60Te-40Bi alloy in mass percent was designed as a tellurium atom evaporation source instead of pure tellurium for an ultraviolet detection photocathode. The alloy was prepared by slow solidification at about 10-2 K·s-1. The microstructure, crystal structure, chemical composition, and crystallographic orientation of each phase in the as-prepared alloy were investigated by optical microscopy, scanning electron microscopy, X-ray diffraction, electron backscatter diffraction, and transmission electron microscopy. The experimental results suggest that the as-prepared 60Te-40Bi alloy consists of primary Bi2Te3 and eutectic Bi2Te3/Te phases. The primary Bi2Te3 phase has the characteristics of faceted growth. The eutectic Bi2Te3 phase is encased by the eutectic Te phase in the eutectic structure. The purity of the eutectic Te phase reaches 100wt% owing to the slow solidification. In the eutectic phases, the crystallographic orientation relationship between Bi2Te3 and Te is confirmed as {[0001]_{B{i_2}T{e_3}}}//{[1\\bar 21\\bar 3]_{Te}} and the direction of Te phase parallel to {[11\\bar 20]_{B{i_2}T{e_3}}} is deviated by 18° from Te N{(2\\bar 1\\bar 11)_{Te}}.

Anomalous thermoelectricity in strained Bi2Te3 films.

PubMed

Liu, Yucong; Chen, Jiadong; Deng, Huiyong; Hu, Gujin; Zhu, Daming; Dai, Ning

2016-09-07

Bi2Te3-based alloys have been intensively used for thermoelectric coolers and generators due to their high Seebeck coefficient S. So far, efforts to improve the S have been made mostly on changing the structures and components. Herein, we demonstrate an anomalous thermoelectricity in strained Bi2Te3 films, i.e., the value of S is obviously changed after reversing the direction of temperature gradient. Further theoretical and experimental analysis shows that it originates from the coupling of thermoelectric and flexoelectric effects caused by a stress gradient. Our finding provides a new avenue to adjust the S of Bi2Te3-based thermoelectric materials through flexoelectric polarization.

Synthesis and Evaluation of Thick Films of Electrochemically Deposited Bi2Te3 and Sb2Te3 Thermoelectric Materials

PubMed Central

Trung, Nguyen Huu; Sakamoto, Kei; Toan, Nguyen Van; Ono, Takahito

2017-01-01

This paper presents the results of the synthesis and evaluation of thick thermoelectric films that may be used for such applications as thermoelectric power generators. Two types of electrochemical deposition methods, constant and pulsed deposition with improved techniques for both N-type bismuth telluride (Bi2Te3) and P-type antimony telluride (Sb2Te3), are performed and compared. As a result, highly oriented Bi2Te3 and Sb2Te3 thick films with a bulk-like structure are successfully synthesized with high Seebeck coefficients and low electrical resistivities. Six hundred-micrometer-thick Bi2Te3 and 500-µm-thick Sb2Te3 films are obtained. The Seebeck coefficients for the Bi2Te3 and Sb2Te3 films are −150 ± 20 and 170 ± 20 µV/K, respectively. Additionally, the electrical resistivity for the Bi2Te3 is 15 ± 5 µΩm and is 25 ± 5 µΩm for the Sb2Te3. The power factors of each thermoelectric material can reach 15 × 10−4 W/mK2 for Bi2Te3 and 11.2 × 10−4 W/mK2 for Sb2Te3. PMID:28772511

Compositional tuning in sputter-grown highly-oriented Bi-Te films and their optical and electronic structures.

PubMed

Saito, Yuta; Fons, Paul; Makino, Kotaro; Mitrofanov, Kirill V; Uesugi, Fumihiko; Takeguchi, Masaki; Kolobov, Alexander V; Tominaga, Junji

2017-10-12

Growth of Bi-Te films by helicon-wave magnetron sputtering is systematically explored using alloy targets. The film compositions obtained are found to strongly depend on both the sputtering and antenna-coil powers. The obtainable film compositions range from Bi 55 Te 45 to Bi 43 Te 57 when a Bi 2 Te 3 alloy target is used, and from Bi 42 Te 58 to Bi 40 Te 60 (Bi 2 Te 3 ) for a Te-rich Bi 30 Te 70 target. All films show strong orientation of the van der Waals layers (00l planes) parallel to the substrate. The atomic level stacking of Bi 2 Te 3 quintuple and Bi bi-layers has been directly observed by high resolution transmission electron microscopy. Band structure simulations reveal that Bi-rich Bi 4 Te 3 bulk is a zero band gap semimetal with a Dirac cone at the Gamma point when spin-orbit coupling is included. Optical measurements also confirm that the material has a zero band gap. The tunability of the composition and the topological insulating properties of the layers will enable the use of these materials for future electronics applications on an industrial scale.

Photo-oxidation-modulated refractive index in Bi2Te3 thin films

NASA Astrophysics Data System (ADS)

Yue, Zengji; Chen, Qinjun; Sahu, Amit; Wang, Xiaolin; Gu, Min

2017-12-01

We report on an 800 nm femtosecond laser beam induced giant refractive index modulation and enhancement of near-infrared transparency in topological insulator material Bi2Te3 thin films. An ultrahigh refractive index of up to 5.9 was observed in the Bi2Te3 thin film in near-infrared frequency. The refractive index dramatically decreases by a factor of ~3 by an exposure to the 800 nm femtosecond laser beam. Simultaneously, the transmittance of the Bi2Te3 thin films markedly increases to ~96% in the near-infrared frequency. The Raman spectra provides strong evidences that the observed both refractive index modulation and transparency enhancement result from laser beam induced photooxidation effects in the Bi2Te3 thin films. The Bi2Te3 compound transfers into Bi2O3 and TeO2 under the laser beam illumination. These experimental results pave the way towards the design of various optical devices, such as near-infrared flat lenses, waveguide and holograms, based on topological insulator materials.

Dispersion interactions between neighboring Bi atoms in (BiH3 )2 and Te(BiR2 )2.

PubMed

Haack, Rebekka; Schulz, Stephan; Jansen, Georg

2018-03-13

Triggered by the observation of a short Bi⋯Bi distance and a BiTeBi bond angle of only 86.6° in the crystal structure of bis(diethylbismuthanyl)tellurane quantum chemical computations on interactions between neighboring Bi atoms in Te(BiR 2 ) 2 molecules (R = H, Me, Et) and in (BiH 3 ) 2 were undertaken. Bi⋯Bi distances atoms were found to significantly shorten upon inclusion of the d shells of the heavy metal atoms into the electron correlation treatment, and it was confirmed that interaction energies from spin component-scaled second-order Møller-Plesset theory (SCS-MP2) agree well with coupled-cluster singles and doubles theory including perturbative triples (CCSD(T)). Density functional theory-based symmetry-adapted perturbation theory (DFT-SAPT) was used to study the anisotropy of the interplay of dispersion attraction and steric repulsion between the Bi atoms. Finally, geometries and relative stabilities of syn-syn and syn-anti conformers of Te(BiR 2 ) 2 (R = H, Me, Et) and interconversion barriers between them were computed. © 2018 Wiley Periodicals, Inc. © 2018 Wiley Periodicals, Inc.

Anomalous thermoelectricity in strained Bi2Te3 films

PubMed Central

Liu, Yucong; Chen, Jiadong; Deng, Huiyong; Hu, Gujin; Zhu, Daming; Dai, Ning

2016-01-01

Bi2Te3-based alloys have been intensively used for thermoelectric coolers and generators due to their high Seebeck coefficient S. So far, efforts to improve the S have been made mostly on changing the structures and components. Herein, we demonstrate an anomalous thermoelectricity in strained Bi2Te3 films, i.e., the value of S is obviously changed after reversing the direction of temperature gradient. Further theoretical and experimental analysis shows that it originates from the coupling of thermoelectric and flexoelectric effects caused by a stress gradient. Our finding provides a new avenue to adjust the S of Bi2Te3-based thermoelectric materials through flexoelectric polarization. PMID:27600406

GW quasiparticle energy study of ternary tetradymite Bi{sub 2}Te{sub 2}Se and Bi{sub 2}Te{sub 2}S thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shuaibu, Alhassan; Department of Physics, Faculty of Science, Nigerian Defence Academy, P.M., 2109. Kaduna Nigeria; Rahman, Md. Mahmudur

In this work, we have evaluated the quasiparticle energies of ternary tetradymite Bi{sub 2}Te{sub 2}Se and Bi{sub 2}Te{sub 2}S using first-principles calculation within the G{sub 0}W{sub 0} methods. We have also performed a broad convergence tests in order to investigate the quasiparticle corrections to the structural parameters and to the semi core d electrons in both of the compounds. For each case, we have calculated the many-body corrections within a one-shot GW method of the compounds. Our results have shown that for Bi{sub 2}Te{sub 2}Se the GW corrections increase the band gap to almost 10%, and for specific atomic positions,more » the band structure shows a close value to the experimental one. For Bi{sub 2}Te{sub 2}S, despite increase in the band gap due to the GW corrections, possibility of bulk resistivity that can be significant for photovoltaic applications was observed.« less

MOCVD of Bi2Te3 and Sb2Te3 on GaAs substrates for thin-film thermoelectric applications.

PubMed

Kim, Jeong-Hun; Jung, Yong-Chul; Suh, Sang-Hee; Kim, Jin-Sang

2006-11-01

Metal organic chemical vapour deposition (MOCVD) has been investigated for growth of Bi2Te3 and Sb2Te3 films on (001) GaAs substrates using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. The surface morphologies of Bi2Te3 and Sb2Te3 films were strongly dependent on the deposition temperatures as it varies from a step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration over the 240 K in Bi2Te3 films. The high Seebeck coefficient (of -160 microVK(-1) for Bi2Te3 and +110 microVK(-1) for Sb2Te3 films, respectively) and good surface morphologies of these materials are promising for the fabrication of a few nm thick periodic Bi2Te3/Sb2Te3 super lattice structures for thin film thermoelectric device applications.

Annealing-Induced Bi Bilayer on Bi2Te3 Investigated via Quasi-Particle-Interference Mapping.

PubMed

Schouteden, Koen; Govaerts, Kirsten; Debehets, Jolien; Thupakula, Umamahesh; Chen, Taishi; Li, Zhe; Netsou, Asteriona; Song, Fengqi; Lamoen, Dirk; Van Haesendonck, Chris; Partoens, Bart; Park, Kyungwha

2016-09-27

Topological insulators (TIs) are renowned for their exotic topological surface states (TSSs) that reside in the top atomic layers, and hence, detailed knowledge of the surface top atomic layers is of utmost importance. Here we present the remarkable morphology changes of Bi2Te3 surfaces, which have been freshly cleaved in air, upon subsequent systematic annealing in ultrahigh vacuum and the resulting effects on the local and area-averaging electronic properties of the surface states, which are investigated by combining scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and Auger electron spectroscopy (AES) experiments with density functional theory (DFT) calculations. Our findings demonstrate that the annealing induces the formation of a Bi bilayer atop the Bi2Te3 surface. The adlayer results in n-type doping, and the atomic defects act as scattering centers of the TSS electrons. We also investigated the annealing-induced Bi bilayer surface on Bi2Te3 via voltage-dependent quasi-particle-interference (QPI) mapping of the surface local density of states and via comparison with the calculated constant-energy contours and QPI patterns. We observed closed hexagonal patterns in the Fourier transform of real-space QPI maps with secondary outer spikes. DFT calculations attribute these complex QPI patterns to the appearance of a "second" cone due to the surface charge transfer between the Bi bilayer and the Bi2Te3. Annealing in ultrahigh vacuum offers a facile route for tuning of the topological properties and may yield similar results for other topological materials.

Vapor Phase Growth of High-Quality Bi-Te Compounds Using Elemental Bi and Te Sources: A Comparison Between High Vacuum and Atmospheric Pressure

NASA Astrophysics Data System (ADS)

Concepción, O.; Escobosa, A.; de Melo, O.

2018-03-01

Bismuth telluride (Bi2Te3), traditionally used in the industry as thermoelectric material, has deserved much attention recently due to its properties as a topological insulator, a kind of material that might have relevant applications in spintronics or quantum computing, among other innovative uses. The preparation of high-quality material has become a very important technological task. Here, we compare the preparation of Bi2Te3 by physical vapor transport from the evaporation of elemental Bi and Te sources, under either low pressure or atmospheric pressure. The layers were characterized by different techniques to evaluate its structural properties. As a result, it is concluded that, as a consequence of the different transport regimes, films grown at atmospheric pressure present better crystal quality.

Superconductivity in the Narrow Gap Semiconductor RbBi 11/3Te 6

DOE PAGES

Malliakas, Christos D.; Chung, Duck Young; Claus, Helmut; ...

2016-10-16

Superconductivity was discovered in the layered compound RbBi 11/3Te 6, featuring Bi vacancies and a narrow band gap of 0.25(2) eV at room temperature. In addition, a sharp superconducting transition at similar to 3.2 K was observed in polycrystalline ingots. The superconducting volume fraction of oriented single crystals is almost 100%, confirming bulk superconductivity. Systematic Se and Sb substitutions in RbBi 11/3-ySb ySe xTe 6-x, revealed a dependence of the superconducting transition on composition that can increase the T c up to similar to 10%. The RbBi 11/3Te 6 system is the first member of the new homologous series Rb[Bimore » 2n+11/3Te 3n+6] with infinite Bi 2Te 3-like layers. Lastly, the large degree of chemical tunability of the electronic structure of the homology via doping and/or substitution gives rise to a new family of superconductors.« less

Connecting thermoelectric performance and topological-insulator behavior: Bi 2Te 3 and Bi 2Te 2Se from first principles

DOE PAGES

Shi, Hongliang; Parker, David S.; Du, Mao-Hua; ...

2015-01-20

Thermoelectric performance is of interest for numerous applications such as waste-heat recovery and solid-state energy conversion and will be seen to be closely connected to topological-insulator behavior. In this paper, we here report first-principles transport and defect calculations for Bi 2Te 2Se in relation to Bi 2Te 3. The two compounds are found to contain remarkably different electronic structures in spite of being isostructural and isoelectronic. We also discuss these results in terms of the topological-insulator characteristics of these compounds.

Thermoelectric properties of Tl and I dual-doped Bi2Te3-based alloys

NASA Astrophysics Data System (ADS)

Wu, Fang; He, Qinglin; Tang, Mingsheng; Song, Hongzhang

2018-04-01

TlxBi2‑xTe3‑xIx (x = 0, 0.05, 0.1 and 0.2) flower-like nanopowders were prepared successfully by the hydrothermal method. Then, the synthesized nanoparticles were pressed into bulks by hot-pressing. The thermoelectric (TE) properties of the TlxBi2‑xTe3‑xIx bulk samples were investigated and discussed. The results showed that the influences of Tl doping on the electrical resistivity and Seebeck coefficients of the Bi2Te3 is over that of I doping. Thus, the power factors of the dual-doped bulks are all less than that of the Bi2Te3 bulk. The thermal conductivities of the TlxBi2‑xTe3‑xIx bulk samples also remain at lower values. As a result, the ZT value of the optimized doped bulk Tl0.1Bi1.9Te2.9I0.1 attains a value of 1.1 at 398 K.

Synthesis of Multishell Nanoplates by Consecutive Epitaxial Growth of Bi2Se3 and Bi2Te3 Nanoplates and Enhanced Thermoelectric Properties.

PubMed

Min, Yuho; Park, Gyeongbae; Kim, Bongsoo; Giri, Anupam; Zeng, Jie; Roh, Jong Wook; Kim, Sang Il; Lee, Kyu Hyoung; Jeong, Unyong

2015-07-28

We herein demonstrate the successive epitaxial growth of Bi2Te3 and Bi2Se3 on seed nanoplates for the scalable synthesis of heterostructured nanoplates (Bi2Se3@Bi2Te3) and multishell nanoplates (Bi2Se3@Bi2Te3@Bi2Se3, Bi2Se3@Bi2Te3@Bi2Se3@Bi2Te3). The relative dimensions of the constituting layers are controllable via the molar ratios of the precursors added to the seed nanoplate solution. Reduction of the precursors produces nanoparticles that attach preferentially to the sides of the seed nanoplates. Once attached, the nanoparticles reorganize epitaxially on the seed crystal lattices to form single-crystalline core-shell nanoplates. The nanoplates, initially 100 nm wide, grew laterally to 620 nm in the multishell structure, while their thickness increased more moderately, from 5 to 20 nm. The nanoplates were pelletized into bulk samples by spark plasma sintering and their thermoelectric properties are compared. A peak thermoelectric figure of merit (ZT) ∼0.71 was obtained at 450 K for the bulk of Bi2Se3@Bi2Te3 nanoplates by simultaneous modulation of electronic and thermal transport in the presence of highly dense grain and phase boundaries.

Superconductivity with twofold symmetry in Bi2Te3/FeTe0.55Se0.45 heterostructures.

PubMed

Chen, Mingyang; Chen, Xiaoyu; Yang, Huan; Du, Zengyi; Wen, Hai-Hu

2018-06-01

Topological superconductors are an interesting and frontier topic in condensed matter physics. In the superconducting state, an order parameter will be established with the basic or subsidiary symmetry of the crystalline lattice. In doped Bi 2 Se 3 or Bi 2 Te 3 with a basic threefold symmetry, it was predicted, however, that bulk superconductivity with order parameters of twofold symmetry may exist because of the presence of odd parity. We report the proximity effect-induced superconductivity in the Bi 2 Te 3 thin film on top of the iron-based superconductor FeTe 0.55 Se 0.45 . By using the quasiparticle interference technique, we demonstrate clear evidence of twofold symmetry of the superconducting gap. The gap minimum is along one of the main crystalline axes following the so-called Δ 4 y notation. This is also accompanied by the elongated vortex shape mapped out by the density of states within the superconducting gap. Our results provide an easily accessible platform for investigating possible topological superconductivity in Bi 2 Te 3 /FeTe 0.55 Se 0.45 heterostructures.

Superconductivity with twofold symmetry in Bi2Te3/FeTe0.55Se0.45 heterostructures

PubMed Central

Du, Zengyi

2018-01-01

Topological superconductors are an interesting and frontier topic in condensed matter physics. In the superconducting state, an order parameter will be established with the basic or subsidiary symmetry of the crystalline lattice. In doped Bi2Se3 or Bi2Te3 with a basic threefold symmetry, it was predicted, however, that bulk superconductivity with order parameters of twofold symmetry may exist because of the presence of odd parity. We report the proximity effect–induced superconductivity in the Bi2Te3 thin film on top of the iron-based superconductor FeTe0.55Se0.45. By using the quasiparticle interference technique, we demonstrate clear evidence of twofold symmetry of the superconducting gap. The gap minimum is along one of the main crystalline axes following the so-called Δ4y notation. This is also accompanied by the elongated vortex shape mapped out by the density of states within the superconducting gap. Our results provide an easily accessible platform for investigating possible topological superconductivity in Bi2Te3/FeTe0.55Se0.45 heterostructures. PMID:29888330

Pressure-induced superconductivity in the giant Rashba system BiTeI.

PubMed

VanGennep, D; Linscheid, A; Jackson, D E; Weir, S T; Vohra, Y K; Berger, H; Stewart, G R; Hennig, R G; Hirschfeld, P J; Hamlin, J J

2017-03-08

At ambient pressure, BiTeI exhibits a giant Rashba splitting of the bulk electronic bands. At low pressures, BiTeI undergoes a transition from trivial insulator to topological insulator. At still higher pressures, two structural transitions are known to occur. We have carried out a series of electrical resistivity and AC magnetic susceptibility measurements on BiTeI at pressure up to  ∼40 GPa in an effort to characterize the properties of the high-pressure phases. A previous calculation found that the high-pressure orthorhombic P4/nmm structure BiTeI is a metal. We find that this structure is superconducting with T c values as high as 6 K. AC magnetic susceptibility measurements support the bulk nature of the superconductivity. Using electronic structure and phonon calculations, we compute T c and find that our data is consistent with phonon-mediated superconductivity.

Pressure-induced superconductivity in the giant Rashba system BiTeI

DOE PAGES

VanGennep, D.; Linscheid, A.; Jackson, D. E.; ...

2017-01-27

We present that at ambient pressure, BiTeI exhibits a giant Rashba splitting of the bulk electronic bands. At low pressures, BiTeI undergoes a transition from trivial insulator to topological insulator. At still higher pressures, two structural transitions are known to occur. We have carried out a series of electrical resistivity and AC magnetic susceptibility measurements on BiTeI at pressure up to ~40 GPa in an effort to characterize the properties of the high-pressure phases. A previous calculation found that the high-pressure orthorhombic P4/nmm structure BiTeI is a metal. We find that this structure is superconducting with T c values asmore » high as 6 K. AC magnetic susceptibility measurements support the bulk nature of the superconductivity. Using electronic structure and phonon calculations, we compute T c and find that our data is consistent with phonon-mediated superconductivity.« less

Synthesis, characterisation and thermoelectric properties of the oxytelluride Bi{sub 2}O{sub 2}Te

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luu, Son D.N.; Department of Chemistry, University of Reading, Whiteknights, Reading RG6 6AD; Vaqueiro, Paz, E-mail: p.vaqueiro@reading.ac.uk

2015-03-15

Bi{sub 2}O{sub 2}Te was synthesised from a stoichiometric mixture of Bi, Bi{sub 2}O{sub 3} and Te by a solid state reaction. Analysis of powder X-ray diffraction data indicates that this material crystallises in the anti-ThCr{sub 2}Si{sub 2} structure type (space group I4/mmm), with lattice parameters a=3.98025(4) and c=12.70391(16) Å. The electrical and thermal transport properties of Bi{sub 2}O{sub 2}Te were investigated as a function of temperature over the temperature range 300≤T (K)≤665. These measurements indicate that Bi{sub 2}O{sub 2}Te is an n-type semiconductor, with a band gap of 0.23 eV. The thermal conductivity of Bi{sub 2}O{sub 2}Te is remarkably lowmore » for a crystalline material, with a value of only 0.91 W m{sup −1} K{sup −1} at room temperature. - Graphical abstract: Bi{sub 2}O{sub 2}Te, which crystallises in the anti-ThCr{sub 2}Si{sub 2} structure type, is an n-type semiconductor with a remarkably low thermal conductivity. - Highlights: • Bi{sub 2}O{sub 2}Te crystallises in the anti-ThCr{sub 2}Si{sub 2} structure type. • Bi{sub 2}O{sub 2}Te is an n-type semiconductor, with a band gap of 0.23 eV. • The thermal conductivity of Bi{sub 2}O{sub 2}Te approaches values found for amorphous solids. • The thermoelectric figure of merit of undoped Bi{sub 2}O{sub 2}Te reaches 0.13 at 573 K.« less

Enhanced thermoelectric performance in the Rashba semiconductor BiTeI through band gap engineering.

PubMed

Wu, Lihua; Yang, Jiong; Zhang, Tiansong; Wang, Shanyu; Wei, Ping; Zhang, Wenqing; Chen, Lidong; Yang, Jihui

2016-03-02

Rashba semiconductors are of great interest in spintronics, superconducting electronics and thermoelectrics. Bulk BiTeI is a new Rashba system with a giant spin-split band structure. 2D-like thermoelectric response has been found in BiTeI. However, as optimizing the carrier concentration, the bipolar effect occurs at elevated temperature and deteriorates the thermoelectric performance of BiTeI. In this paper, band gap engineering in Rashba semiconductor BiTeI through Br-substitution successfully reduces the bipolar effect and improves the thermoelectric properties. By utilizing the optical absorption and Burstein-Moss-effect analysis, we find that the band gap in Rashba semiconductor BiTeI increases upon bromine substitution, which is consistent with theoretical predictions. Bipolar transport is mitigated due to the larger band gap, as the thermally-activated minority carriers diminish. Consequently, the Seebeck coefficient keeps increasing with a corresponding rise in temperature, and thermoelectric performance can thus be enhanced with a ZT  =  0.5 at 570 K for BiTeI0.88Br0.12.

Thermal conductivity of Bi2(SexTe1-x)3 alloy films grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Yoo, Taehee; Lee, Eungkyu; Dong, Sining; Li, Xiang; Liu, Xinyu; Furdyna, Jacek K.; Dobrowolska, Margaret; Luo, Tengfei

2017-06-01

We studied the thermal conductivity of Bi2Se3, Bi2Te3, and their alloy Bi2(SexTe1-x)3 at room temperature using time-domain thermoreflectance measurements. The Bi2(SexTe1-x)3 films with various concentrations of Se and Te prepared by molecular beam epitaxy on GaAs substrates were investigated to study the dependence of thermal conductivity on film composition. We observed that the Bi2(SexTe1-x)3 ternary alloys can have much lower thermal conductivity values compared to those of Bi2Se3 and Bi2Te3. These results may provide useful information for developing and engineering low thermal conductivity materials for thermoelectric applications.

Performance of Ge-Sb-Bi-Te-B Recording Media for Phase-Change Optical Disks

NASA Astrophysics Data System (ADS)

Lee, Chain-Ming; Yen, Wen-Shin; Liu, Ren-Haur; Chin, Tsung-Shune

2001-09-01

We investigated the physical properties of GeSbBiTeB materials and examined the feasibility for phase change recording. The studied compositions were Ge4Sb0.5Bi0.5Te5 and Ge2Sb1.5Bi0.5Te5 with B doping. The coexistence of Bi and B atoms into both Ge4SbTe5 and Ge2Sb2Te5 lattice maintains single fcc structure without phase separation. The Bi substitution shows benefits in decreasing crystallization temperature and activation energy, however the reflectivity is slightly reduced. 3 With small amount addition of boron about 1 at.%, the reflectivity can be increased. 2 Conventional 4-layer structure of digital versatile disk-random access memory (DVD-RAM) 2.6 GB format was used to prepare the disks for dynamic characterization and overwrite cyclability evaluations. The disk with Ge4Sb0.5Bi0.5Te5(B) recording layer shows large noise fluctuation and low overwrite erase ratio, suggesting that the crystallization speed is still insufficient. While the disk with Ge2Sb1.5Bi0.5Te5(B) recording layer shows lower writing and erasing powers, stable noise level and high overwrite erase ratio, indicating the capability for DVD-RAM applications. The effect of B doping was verified to enhance the signal amplitude and modulation.

Current-induced depairing in the Bi2Te3/FeTe interfacial superconductor

NASA Astrophysics Data System (ADS)

Kunchur, M. N.; Dean, C. L.; Moghadam, N. Shayesteh; Knight, J. M.; He, Q. L.; Liu, H.; Wang, J.; Lortz, R.; Sou, I. K.; Gurevich, A.

2015-09-01

We investigated current induced depairing in the Bi2Te3 /FeTe topological insulator-chalcogenide interface superconductor. The measured depairing current density provides information on the magnetic penetration depth and superfluid density, which in turn shed light on the nature of the normal state that underlies the interfacial superconductivity.

Bi2Te3 thin hexagonal nanoplatelets: Synthesis and its characterization studies

NASA Astrophysics Data System (ADS)

Vinoth, S.; Balaganapathi, T.; KaniAmuthan, B.; Arun, T.; Muthuselvam, I. Panneer; Chou, Fang-Cheng; Thilakan, P.

2017-08-01

Solvothermal synthesis and optimization of pure Bismuth telluride (Bi2Te3) hexagonal nanoplatelets was carried out from Bismuth Oxide (Bi2O3) and Tellurium dioxide (TeO2). XRD measurements revealed a sensitive change in crystallization behaviour in correlation with variation in Te/Bi stoichiometry identified through the exchange in intensities between (10 10 ̅) and (110) peaks. Further, Energy Dispersive X-ray (EDAX) analysis revealed the variation in Te/Bi ratio with respect to autoclave temperature. Field emission scanning electron Microscope (FESEM) and the high resolution transmission electron Microscope (HRTEM) studies show the complete growth of hexagonal nanoplatelets at 200 °C. Confocal Micro-Raman measurements revealed the occurrence of symmetry breaking in the synthesized hexagonal nanoplatelets. The electrical conductivity and the activation energy were recorded as 6.01×10-3 S/m and 0.042 eV respectively. Highest maximum absolute value of Seebeck coefficient of -355 μV/K was obtained for the hexagonal nanoplatelets.

Crystal growth of Bi{sub 2}Te{sub 3} and noble cleaved (0001) surface properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Atuchin, V.V., E-mail: atuchin@thermo.isp.nsc.ru; Functional Electronics Laboratory, Tomsk State University, Tomsk 634050; Golyashov, V.A.

2016-04-15

A high quality Bi{sub 2}Te{sub 3} crystal has been grown by Bridgman method with the use of rotating heat field. The phase purity and bulk structural quality of the crystal have been verified by XRD analysis and rocking curve observation. The atomically smooth Bi{sub 2}Te{sub 3}(0001) surface with an excellent crystallographic quality is formed by cleavage in the air. The chemical and microstructural properties of the surface have been evaluated with RHEED, AFM, STM, SE and XPS. The Bi{sub 2}Te{sub 3}(0001) cleaved surface is formed by atomically smooth terraces with the height of the elemental step of ~1.04±0.1 nm, asmore » estimated by AFM. There is no surface oxidation process detected over a month keeping in the air at normal conditions, as shown by comparative core level photoelectron spectroscopy. - Graphical abstract: A high quality Bi{sub 2}Te{sub 3} crystal has been grown by Bridgman method with the use of rotating heat field and the Bi{sub 2}Te{sub 3}(0001) cleaved surface has been evaluated with RHEED, AFM, STM, SE and XPS. - Highlights: • High-quality Bi{sub 2}Te{sub 3} crystal of 10 mm in diameter and 50 mm long have been grown. • The high-purity cleaved Bi{sub 2}Te{sub 3}(0001) surface has been evaluated by RHEED, AFM, STM and XPS methods. • The Bi{sub 2}Te{sub 3} surface covered by atomically smooth (0001) terraces is chemically stable for a long time.« less

Thermoelectric properties and thermal stability of Bi-doped PbTe single crystal

NASA Astrophysics Data System (ADS)

Chen, Zhong; Li, Decong; Deng, Shuping; Tang, Yu; Sun, Luqi; Liu, Wenting; Shen, Lanxian; Yang, Peizhi; Deng, Shukang

2018-06-01

In this study, n-type Bi-doped single-crystal PbTe thermoelectric materials were prepared by melting and slow cooling method according to the stoichiometric ratio of Pb:Bi:Te = 1-x:x:1 (x = 0, 0.1, 0.15, 0.2, 0.25). The X-ray diffraction patterns of Pb1-xBixTe samples show that all main diffraction peaks are well matched with the PbTe matrix, which has a face-centered cubic structure with the space group Fm 3 bar m . Electron probe microanalysis reveals that Pb content decreases gradually, and Te content remains invariant basically with the increase of Bi content, indicating that Bi atoms are more likely to replace Pb atoms. Thermal analysis shows that the prepared samples possess relatively high thermal stability. Simultaneously, transmission electron microscopy and selected area electron diffraction pattern indicate that the prepared samples have typical single-crystal structures with good mechanical properties. Moreover, the electrical conductivity of the prepared samples improved significantly compared with that of the pure sample, and the maximum ZT value of 0.84 was obtained at 600 K by the sample with x = 0.2.

Bulk photovoltaic effect at infrared wavelength in strained Bi2Te3 films

NASA Astrophysics Data System (ADS)

Liu, Yucong; Chen, Jiadong; Wang, Chao; Deng, Huiyong; Zhu, Da-Ming; Hu, Gujin; Chen, Xiaoshuang; Dai, Ning

2016-12-01

As a prominent three-dimensional (3-D) topological insulator, traditional thermoelectric material Bi2Te3 has re-attracted greater interest in recent years. Herein, we demonstrate for the first time that c-axis oriented strained Bi2Te3 films exhibit the bulk photovoltaic effect (BPVE) at infrared wavelengths, which was only found in wide band-gap ferroelectric materials before. Moreover, further experiments show that the bulk photovoltaic effect probably comes from the flexoelectric effect which was induced by the stress gradient in strained Bi2Te3 films. And we anticipate that the results are generalizable to other layer-structured or two-dimensional (2-D) materials, e.g., Bi2Se3 and MoS2.

Pressure-induced reinforcement of interfacial superconductivity in a Bi2Te3/Fe1+yTe heterostructure

NASA Astrophysics Data System (ADS)

Shen, Junying; Heuckeroth, Claire; Deng, Yuhang; He, Qinglin; Liu, Hong Chao; Liang, Jing; Wang, Jiannong; Sou, Iam Keong; Schilling, James S.; Lortz, Rolf

2017-12-01

We investigate the hydrostatic pressure dependence of interfacial superconductivity occurring at the atomically sharp interface between two non-superconducting materials: the topological insulator (TI) Bi2Te3 and the parent compound Fe1+yTe of the chalcogenide iron-based superconductors. Under pressure, a significant increase in the superconducting transition temperature Tc is observed. We interpret our data in the context of a pressure-induced enhanced coupling of the Fe1+yTe interfacial layer with the Bi2Te3 surface state, which modifies the electronic properties of the interface layer in a way that superconductivity emerges and becomes further enhanced under pressure. This demonstrates the important role of the TI in the interfacial superconducting mechanism.

Enhanced thermoelectric performance in Cu-intercalated BiTeI by compensation weakening induced mobility improvement

DOE PAGES

Wu, Lihua; Yang, Jiong; Chi, Miaofang; ...

2015-09-23

The low weighted carrier mobility has long been considered to be the key challenge for improvement of thermoelectric (TE) performance in BiTeI. The Rashba-effect-induced two-dimensional density of states in this bulk semiconductor is beneficial for thermopower enhancement, which makes it a prospective compound for TE applications. In this report, we show that intercalation of minor Cu-dopants can substantially alter the equilibria of defect reactions, selectively mediate the donor-acceptor compensation, and tune the defect concentration in the carrier conductive network. Consequently, the potential fluctuations responsible for electron scattering are reduced and the carrier mobility in BiTeI can be enhanced by amore » factor of two to three between 10 K and 300 K. The carrier concentration can also be optimized by tuning the Te/I composition ratio, leading to higher thermopower in this Rashba system. Cu-intercalation in BiTeI gives rise to higher power factor, slightly lower lattice thermal conductivity, and consequently improved figure of merit. Compared with pristine BiTe 0.98I 1.02, the TE performance in Cu 0.05BiTeI reveals a 150% and 20% enhancement at 300 and 520 K, respectively. Ultimately, these results demonstrate that defect equilibria mediated by selective doping in complex TE and energy materials could be an effective approach to carrier mobility and performance optimization.« less

Fundamental and progress of Bi2Te3-based thermoelectric materials

NASA Astrophysics Data System (ADS)

Hong, Min; Chen, Zhi-Gang; Zou, Jin

2018-04-01

Thermoelectric materials, enabling the directing conversion between heat and electricity, are one of the promising candidates for overcoming environmental pollution and the upcoming energy shortage caused by the over-consumption of fossil fuels. Bi2Te3-based alloys are the classical thermoelectric materials working near room temperature. Due to the intensive theoretical investigations and experimental demonstrations, significant progress has been achieved to enhance the thermoelectric performance of Bi2Te3-based thermoelectric materials. In this review, we first explored the fundamentals of thermoelectric effect and derived the equations for thermoelectric properties. On this basis, we studied the effect of material parameters on thermoelectric properties. Then, we analyzed the features of Bi2Te3-based thermoelectric materials, including the lattice defects, anisotropic behavior and the strong bipolar conduction at relatively high temperature. Then we accordingly summarized the strategies for enhancing the thermoelectric performance, including point defect engineering, texture alignment, and band gap enlargement. Moreover, we highlighted the progress in decreasing thermal conductivity using nanostructures fabricated by solution grown method, ball milling, and melt spinning. Lastly, we employed modeling analysis to uncover the principles of anisotropy behavior and the achieved enhancement in Bi2Te3, which will enlighten the enhancement of thermoelectric performance in broader materials.

Structural studies of Bi 2 O 3 -Nb 2 O 5 -TeO 2 glasses

DOE PAGES

Wilding, Martin C.; Delaizir, Gaelle; Benmore, Chris J.; ...

2016-07-25

Bi 2O 3-Nb 2O 5-TeO 2 glasses show unusual annealing behavior with appearance of spherulites within the matrix glass structure for the Bi 0.5Nb 0.5Te 3O 8 composition. The textures resemble those found previously among polyamorphic Al 2O 3-Y 2O 3 glasses containing metastably co-existing high- and low-density phases produced during quenching. However the spherulites produced within the Bi 2O 3-Nb 2O 5-TeO 2 glass are crystalline and can be identified as an “anti-glass” phase related to β-Bi 2Te 4O 11. Here, we used high energy synchrotron X-ray diffraction data to study structures of binary and ternary glasses quenched frommore » liquids within the Bi 2O 3-Nb 2O 5-TeO 2 system. These reveal a glassy network based on interconnected TeO 4 and TeO 3 units that is related to TeO 2 crystalline materials but with larger Te…Te separations due to the presence of TeO 3 groups and non-bridging oxygens linked to modifier (Bi 3 +, Nb 5 +) cations. Analysis of the viscosity-temperature relations indicates that the glass-forming liquids are “fragile” and there is no evidence for a LLPT occurring in the supercooled liquid. The glasses obtained by quenching likely correspond to a high-density amorphous (HDA) state. Subsequent annealing above T g shows mainly evidence for direct crystallization of the “anti-glass” tellurite phase. But, some evidence may exist for simultaneous formation of nanoscale amorphous spherulites that could correspond to the LDA polyamorph. The quenching and annealing behavior of Bi 2O 3-Nb 2O 5-TeO 2 supercooled liquids and glasses is compared with similar materials in the Al 2O 3-Y 2O 3 system.« less

Enhancing figure-of-merit of n-type Bi2Te3-xSex

NASA Astrophysics Data System (ADS)

Yan, Xiao; Yang, Jian; Ma, Yi; Poudel, Bed; Lan, Yucheng; Wang, Dezhi; Ren, Zhifeng; Hao, Qing; Chen, Gang

2008-03-01

Themoelectric materials with high dimensionless figure-of-merit (ZT) are greatly demanded in energy industry, among which bismuth telluride (Bi2Te3) exhibits decent ZT around room temperature. However, thermal conductivity of Bi2Te3 is still high which limits its wider use for low temperature cooling devices. Here we investigate nanostructured bulk n-type Bi2Te3-xSex by reducing the thermal conductivity via increased phonon scattering of the significantly increased grain boundaries due to nano size grains. We first make alloyed nanopowders by mechanical alloying a mixture of elements with the right ratio and then 100% nanostructured samples by hot press.

Size effect on thermoelectric properties of Bi2Te3 nanoparticles

NASA Astrophysics Data System (ADS)

Choudhary, K. K.; Sharma, Uttam; Lodhi, Pavitra Devi; Kaurav, Netram

2018-05-01

Bi2Te3 nanoparticles exhibit size dependent thermoelectric properties which gives an opportunity to tune the size for optimization of the thermoelectric figure of merit (ZT). We have quantitatively analyzed the thermoelectric properties of Bi2Te3 using phonon scattering mechanism by incorporating the scattering of phonons with defects, grain boundaries, electrons and Umklapp phonon scatterings. The maximum value of ZT = 0.92 is obtained at T = 400 K for 30 nm Bi2Te3 nanoparticles in comparison to ZT = 0.45 for 150 nm nanoparticles at the same temperature. With decrease in size of nanoparticles interface volume ratio increases which increase the phonon scatterings with grain boundaries and point defects, results in decrease in thermal conductivity due to reduction in mean free path of phonons. As a result of decrease in thermal conductivity (κ), Seeback coefficient (S) and ZT increases.

Observation of hidden atomic order at the interface between Fe and topological insulator Bi2Te3.

PubMed

Sánchez-Barriga, Jaime; Ogorodnikov, Ilya I; Kuznetsov, Mikhail V; Volykhov, Andrey A; Matsui, Fumihiko; Callaert, Carolien; Hadermann, Joke; Verbitskiy, Nikolay I; Koch, Roland J; Varykhalov, Andrei; Rader, Oliver; Yashina, Lada V

2017-11-22

To realize spintronic devices based on topological insulators (TIs), well-defined interfaces between magnetic metals and TIs are required. Here, we characterize atomically precisely the interface between the 3d transition metal Fe and the TI Bi 2 Te 3 at different stages of its formation. Using photoelectron diffraction and holography, we show that after deposition of up to 3 monolayers Fe on Bi 2 Te 3 at room temperature, the Fe atoms are ordered at the interface despite the surface disorder revealed by our scanning-tunneling microscopy images. We find that Fe occupies two different sites: a hollow adatom deeply relaxed into the Bi 2 Te 3 quintuple layers and an interstitial atom between the third (Te) and fourth (Bi) atomic layers. For both sites, our core-level photoemission spectra and density-functional theory calculations demonstrate simultaneous chemical bonding of Fe to both Te and Bi atoms. We further show that upon deposition of Fe up to a thickness of 20 nm, the Fe atoms penetrate deeper into the bulk forming a 2-5 nm interface layer containing FeTe. In addition, excessive Bi is pushed down into the bulk of Bi 2 Te 3 leading to the formation of septuple layers of Bi 3 Te 4 within a distance of ∼25 nm from the interface. Controlling the magnetic properties of the complex interface structures revealed by our work will be of critical importance when optimizing the efficiency of spin injection in TI-based devices.

Understanding the evolution of anomalous anharmonicity in Bi 2 Te 3 - x Se x

DOE PAGES

Tian, Yao; Jia, Shuang; Cava, R. J.; ...

2017-03-08

The anharmonic effect in thermoelectrics has been a central topic for decades in both condensed matter physics and material science. However, despite the long-believed strong and complex anharmonicity in the Bi 2Te 3-xSe x series, experimental verification of anharmonicity and its evolution with doping remains elusive. We fill this important gap with high-resolution, temperature-dependent Raman spectroscopy in high-quality single crystals of Bi 2Te, Bi 2Te 2Se , and Bi 2Se 3 over the temperature range from 4 to 293 K. Klemens's model was employed to explain the renormalization of their phonon linewidths. The phonon energies of Bi 2Se 3 andmore » Bi 2Te 3 are analyzed in detail from three aspects: lattice expansion, cubic anharmonicity, and quartic anharmonicity. For the first time, we explain the evolution of anharmonicity in various phonon modes and across the series. Lastly, in particular, we find that the interplay between cubic and quartic anharmonicity is governed by their distinct dependence on the phonon density of states, providing insights into anomalous anharmonicity designing of new thermoelectrics.« less

Quantum Size Effects in Transport Properties of Bi2Te3 Topological Insulator Thin Films

NASA Astrophysics Data System (ADS)

Rogacheva, E. I.; Budnik, A. V.; Nashchekina, O. N.; Meriuts, A. V.; Dresselhaus, M. S.

2017-07-01

Bi2Te3 compound and Bi2Te3-based solid solutions have attracted much attention as promising thermoelectric materials for refrigerating devices. The possibility of enhancing the thermoelectric efficiency in low-dimensional structures has stimulated studies of Bi2Te3 thin films. Now, interest in studying the transport properties of Bi2Te3 has grown sharply due to the observation of special properties characteristic of three-dimensional (3D) topological insulators in Bi2Te3. One of the possible manifestations of quantum size effects in two-dimensional structures is an oscillatory behavior of the dependences of transport properties on film thickness, d. The goal of this work is to summarize our earlier experimental results on the d-dependences of transport properties of Bi2Te3 thin films obtained by thermal evaporation in a vacuum on glass substrates, and to present our new results of theoretical calculations of the oscillations periods within the framework of the model of an infinitely deep potential well, which takes into account the dependence of the Fermi energy on d and the contribution of all energy subbands below the Fermi level to the conductivity. On the basis of the data obtained, some general regularities and specificity of the quantum size effects manifestation in 3D topological insulators are established.

Influence of Nanoinclusions on Thermoelectric Properties of n-Type Bi2Te3 Nanocomposites

NASA Astrophysics Data System (ADS)

Fan, Shufen; Zhao, Junnan; Yan, Qingyu; Ma, Jan; Hng, Huey Hoon

2011-05-01

n-Type Bi2Te3 nanocomposites with enhanced figure of merit, ZT, were fabricated by a simple, high-throughput method of mixing nanostructured Bi2Te3 particles obtained through melt spinning with micron-sized particles. Moderately high power factors were retained, while the thermal conductivity of the nanocomposites was found to decrease with increasing weight percent of nanoinclusions. The peak ZT values for all the nanocomposites were above 1.1, and the maximum shifted to higher temperature with increasing amount of nanoinclusions. A maximum ZT of 1.18 at 42°C was obtained for the 10 wt.% nanocomposite, which is a 43% increase over the bulk sample at the same temperature. This is the highest ZT reported for n-type Bi2Te3 binary material, and higher ZT values are expected if state-of-the-art Bi2Te3- x Se x materials are used.

Interband absorption edge in the topological insulators Bi2(Te1-xSex) 3

NASA Astrophysics Data System (ADS)

Dubroka, A.; Caha, O.; Hronček, M.; Friš, P.; Orlita, M.; Holý, V.; Steiner, H.; Bauer, G.; Springholz, G.; Humlíček, J.

2017-12-01

We have investigated the optical properties of thin films of topological insulators Bi2Te3 , Bi2Se3 , and their alloys Bi2(Te1-xSex) 3 on BaF2 substrates by a combination of infrared ellipsometry and reflectivity in the energy range from 0.06 to 6.5 eV. For the onset of interband absorption in Bi2Se3 , after the correction for the Burstein-Moss effect, we find the value of the direct band gap of 215 ±10 meV at 10 K. Our data support the picture that Bi2Se3 has a direct band gap located at the Γ point in the Brillouin zone and that the valence band reaches up to the Dirac point and has the shape of a downward-oriented paraboloid, i.e., without a camel-back structure. In Bi2Te3 , the onset of strong direct interband absorption at 10 K is at a similar energy of about 200 meV, with a weaker additional feature at about 170 meV. Our data support the recent G W band-structure calculations suggesting that the direct interband transition does not occur at the Γ point but near the Z -F line of the Brillouin zone. In the Bi2(Te1-xSex) 3 alloy, the energy of the onset of direct interband transitions exhibits a maximum near x =0.3 (i.e., the composition of Bi2Te2Se ), suggesting that the crossover of the direct interband transitions between the two points in the Brillouin zone occurs close to this composition.

Scanning probe microscopy induced surface modifications of the topological insulator Bi2Te3 in different environments

NASA Astrophysics Data System (ADS)

Netsou, Asteriona-Maria; Thupakula, Umamahesh; Debehets, Jolien; Chen, Taishi; Hirsch, Brandon; Volodin, Alexander; Li, Zhe; Song, Fengqi; Seo, Jin Won; De Feyter, Steven; Schouteden, Koen; Van Haesendonck, Chris

2017-08-01

We investigated the topological insulator (TI) Bi2Te3 in four different environments (ambient, ultra-high vacuum (UHV), nitrogen gas and organic solvent environment) using scanning probe microscopy (SPM) techniques. Upon prolonged exposure to ambient conditions and organic solvent environments the cleaved surface of the pristine Bi2Te3 is observed to be strongly modified during SPM measurements, while imaging of freshly cleaved Bi2Te3 in UHV and nitrogen gas shows considerably less changes of the Bi2Te3 surface. We conclude that the reduced surface stability upon exposure to ambient conditions is triggered by adsorption of molecular species from ambient, including H2O, CO2, etc which is verified by Auger electron spectroscopy. Our findings of the drastic impact of exposure to ambient on the Bi2Te3 surface are crucial for further in-depth studies of the intrinsic properties of the TI Bi2Te3 and for potential applications that include room temperature TI based devices operated under ambient conditions.

Surface phonons in the topological insulators Bi2Se3 and Bi2Te3

NASA Astrophysics Data System (ADS)

Boulares, Ibrahim; Shi, Guangsha; Kioupakis, Emmanouil; Lošťák, Petr; Uher, Ctirad; Merlin, Roberto

2018-03-01

Raman scattering [K. M. F. Shahil et al., Appl. Phys. Lett. 96, 153103 (2010), V. Gnezdilov et al., Phys. Rev. B 84, 195118 (2011) and H. -H. Kung et al., Phys. Rev. B 95, 245406 (2017)], inelastic helium scattering [X. Zhu et al., Phys. Rev. Lett. 107, 186102 (2011)] and photoemission experiments [J. A. Sobota et al., Phys. Rev. Lett. 113, 157401 (2014)] on the topological insulators Bi2Se3 and Bi2Te3 show features in the range ∼ 50-160 cm-1, which have been assigned alternatively to Raman-forbidden, bulk infrared modes arising from symmetry breaking at the surface or to surface phonons, which couple to the topologically protected electronic states. Here, we present temperature- and wavelength- dependent Raman studies showing additional modes we ascribe to surface phonons in both Bi2Se3 and Bi2Te3. Our assignment is supported by density functional theory calculations revealing surface phonons at frequencies close to those of the extra peaks in the Raman data. The theoretical results also indicate that these modes are not a consequence of spin-orbit coupling and, thus, that their occurrence is unrelated to the topological properties of these materials.

Thermoelectric Properties of Bi2Te3: CuI and the Effect of Its Doping with Pb Atoms

PubMed Central

Han, Mi-Kyung; Lee, Da-Hee; Kim, Sung-Jin

2017-01-01

In order to understand the effect of Pb-CuI co-doping on the thermoelectric performance of Bi2Te3, n-type Bi2Te3 co-doped with x at % CuI and 1/2x at % Pb (x = 0, 0.01, 0.03, 0.05, 0.07, and 0.10) were prepared via high temperature solid state reaction and consolidated using spark plasma sintering. Electron and thermal transport properties, i.e., electrical conductivity, carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity, of CuI-Pb co-doped Bi2Te3 were measured in the temperature range from 300 K to 523 K, and compared to corresponding x% of CuI-doped Bi2Te3 and undoped Bi2Te3. The addition of a small amount of Pb significantly decreased the carrier concentration, which could be attributed to the holes from Pb atoms, thus the CuI-Pb co-doped samples show a lower electrical conductivity and a higher Seebeck coefficient when compared to CuI-doped samples with similar x values. The incorporation of Pb into CuI-doped Bi2Te3 rarely changed the power factor because of the trade-off relationship between the electrical conductivity and the Seebeck coefficient. The total thermal conductivity(κtot) of co-doped samples (κtot ~ 1.4 W/m∙K at 300 K) is slightly lower than that of 1% CuI-doped Bi2Te3 (κtot ~ 1.5 W/m∙K at 300 K) and undoped Bi2Te3 (κtot ~ 1.6 W/m∙K at 300 K) due to the alloy scattering. The 1% CuI-Pb co-doped Bi2Te3 sample shows the highest ZT value of 0.96 at 370 K. All data on electrical and thermal transport properties suggest that the thermoelectric properties of Bi2Te3 and its operating temperature can be controlled by co-doping. PMID:29072613

Optical and thermoelectric properties of nano-particles based Bi2(Te1-xSex)3 thin films

NASA Astrophysics Data System (ADS)

Adam, A. M.; Lilov, E.; Petkov, P.

2017-01-01

Nano-particles of Bi2Te3 and Bi2(Te1-xSex)3 films were deposited using vacuum thermal evaporation technique from previously prepared bulk alloys synthesized by melting method. Optical and thermoelectric properties were studied in the temperature range of 300-473K. The formation of none- and Se-doped Bi2Te3 nano-particles was verified by EDX and XRD analysis. TEM, SEM and AFM analysis showed the prepared films are polycrystalline in nature. The measurements of electrical conductivity and Seebeck coefficient, alongside with thermal conductivity calculations, resulted in the highest values of thermoelectric power at high temperature to be reported. The maximum value of power factor was calculated at 62.82917 μWK-2cm-1 for (Bi2Se0.3Te1.7) sample at 463 K. On the addition of Se to Bi2Te3 film, a significant decrease of the electronic thermal conductivity (Kel) from 2.181 × 10-2 to 0.598 × 10-2 (μW/cm.K) could be achieved. Figure of merit (ZT) calculations showed a maximum value of 0.85 at room temperature, for Bi2Te3. Besides the increase of ZT value for all samples at higher temperature, surprisingly, a value of 2.75 for (Bi2Se1.2Te1.8) was obtained. We believe our results could open avenues for new applications.

Thermoelectric properties of Co4Sb12 with Bi2Te3 nanoinclusions

NASA Astrophysics Data System (ADS)

Ghosh, Sanyukta; Bisht, Anuj; Karati, Anirudha; Rogl, Gerda; Rogl, Peter; Murty, B. S.; Suwas, Satyam; Mallik, Ramesh Chandra

2018-03-01

The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi2Te3) nanoinclusions in Co4Sb12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi2Te3 nanoparticles were dispersed into bulk Co4Sb12 by ball-milling. The bulk was fabricated by spark plasma sintering. The presence of Bi2Te3 dispersion in Co4Sb12 was confirmed by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and electron back scattered diffraction technique. Energy dispersive spectroscopy showed antimony (Sb) as an impurity phase for higher contents of Bi2Te3 in the sample. The Seebeck coefficient (S) and electrical conductivity (σ) were measured in the temperature range of 350-673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in σ with Bi2Te3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423-673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories.

Thermoelectric properties of Co4Sb12 with Bi2Te3 nanoinclusions.

PubMed

Ghosh, Sanyukta; Bisht, Anuj; Karati, Anirudha; Rogl, Gerda; Rogl, Peter; Murty, B S; Suwas, Satyam; Mallik, Ramesh Chandra

2018-02-12

The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi 2 Te 3 ) nanoinclusions in Co 4 Sb 12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi 2 Te 3 nanoparticles were dispersed into bulk Co 4 Sb 12 by ball-milling. The bulk was fabricated by spark plasma sintering. The presence of Bi 2 Te 3 dispersion in Co 4 Sb 12 was confirmed by x-ray diffraction, scanning electron microscopy, transmission electron microscopy and electron back scattered diffraction technique. Energy dispersive spectroscopy showed antimony (Sb) as an impurity phase for higher contents of Bi 2 Te 3 in the sample. The Seebeck coefficient (S) and electrical conductivity (σ) were measured in the temperature range of 350-673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in σ with Bi 2 Te 3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423-673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories.

High thermoelectric properties of (Sb, Bi)2Te3 nanowire arrays by tilt-structure engineering

NASA Astrophysics Data System (ADS)

Tan, Ming; Hao, Yanming; Deng, Yuan; Chen, Jingyi

2018-06-01

In this paper, we present an innovative tilt-structure design concept for (Sb, Bi)2Te3 nanowire array assembled by high-quality nanowires with well oriented growth, utilizing a simple vacuum thermal evaporation technique. The unusual tilt-structure (Sb, Bi)2Te3 nanowire array with a tilted angle of 45° exhibits a high thermoelectric dimensionless figure-of-merit ZT = 1.72 at room temperature. The relatively high ZT value in contrast to that of previously reported (Sb, Bi)2Te3 materials and the vertical (Sb, Bi)2Te3 nanowire arrays evidently reveals the crucial role of the unique tilt-structure in favorably influencing carrier and phonon transport properties, resulting in a significantly improved ZT value. The transport mechanism of such tilt-structure is proposed and investigated. This method opens a new approach to optimize nano-structure in thin films for next-generation thermoelectric materials and devices.

Pressure evolution of electrical transport in the 3D topological insulator (Bi,Sb) 2 (Se,Te) 3

DOE PAGES

Jeffries, J. R.; Butch, N. P.; Vohra, Y. K.; ...

2015-03-18

The group V-VI compounds|like Bi 2Se 3, Sb 2Te 3, or Bi 2Te 3|have been widely studied in recent years for their bulk topological properties. The high-Z members of this series form with the same crystal structure, and are therefore amenable to isostructural substitution studies. It is possible to tune the Bi-Sb and Te-Se ratios such that the material exhibits insulating behavior, thus providing an excellent platform for understanding how a topological insulator evolves with applied pressure. We report our observations of the pressure-dependent electrical transport and crystal structure of a pseudobinary (Bi,Sb) 2(Te,Se) 3 compound. Similar to some ofmore » its sister compounds, the (Bi,Sb) 2(Te,Se) 3 pseudobinary compound undergoes multiple, pressure-induced phase transformations that result in metallization, the onset of a close-packed crystal structure, and the development of distinct superconducting phases.« less

Thermoelectric Performance of n-Type Bi2Te3/Cu Composites Fabricated by Nanoparticle Decoration and Spark Plasma Sintering

NASA Astrophysics Data System (ADS)

Sie, F. R.; Kuo, C. H.; Hwang, C. S.; Chou, Y. W.; Yeh, C. H.; Lin, Y. L.; Huang, J. Y.

2016-03-01

Dense n-type Bi2Te3/Cu composites were prepared using Cu-based acetate decomposition and spark plasma sintering at 673 K and 50 MPa. The effects of Cu addition into ball-milled Bi2Te3 on the thermoelectric properties of composites were investigated. The scanning electron microscopy results reveal that Cu nanoparticles with a size of 50-100 nm were dispersed in the Bi2Te3 matrix and also pinned at Bi2Te3 grain boundaries. The thermoelectric performance of all specimens was measured in the temperature range of 300-500 K. The electrical conduction transformed from metallic to semiconducting with an increase in Cu content due to a decrease in carrier concentration. Hence, the variation in the carrier concentration is determined by the role of Cu dopant in Bi2Te3. Furthermore, the thermal conductivity decreased due to lower electronic thermal conductivity and electrical conductivity. In comparison with Bi2Te3, the room-temperature ZT value for the Bi2Te3/Cu (1.0 wt.%) sample increased from 0.31 to 0.60 due primarily to the significant increase in the power factor and reduction in thermal conductivity.

The role of Te(IV) and Bi(III) chloride complexes in hydrothermal mass transfer: An X-ray absorption spectroscopic study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Etschmann, Barbara E.; Liu, Weihua; Pring, Allan

2016-05-01

Tellurium (Te) and bismuth (Bi) are two metal(loid)s often enriched together with gold (Au) in hydrothermal deposits; however the speciation and transport properties for these two metals in hydrothermal systems are poorly understood. We investigated the effect of chloride on the speciation of Te(IV) and Bi(III) in hydrothermal solutions using in-situ XAS spectroscopy. At ambient temperature, oxy-hydroxide complexes containing the [TeO3] moiety (e.g., H3TeO3+ under highly acidic conditions) predominate in salty solutions over a wide range in pH and salt concentrations. Te(IV)-Cl complexes only appear at pH(25 degrees C) <= 2 and high Cl- activity (>= 10). The highest ordermore » Te(IV) chloride complex detected is TeCl4(aq), and contains the [TeCl4] moiety. Upon heating to 199 degrees C, the Te(IV)-Cl complexes become more stable; however they still required highly acidic conditions which are likely to exist only in very limited environments in nature. At ambient temperature, Bi(III) is coordinated to 5.5(5) Cl atoms in high salinity, acidic (HCl >= 0.5 m) chloride solutions. This, combined with large EXAFS-derived structural disorder parameters, suggests that the Bi(III) complex is most likely present as both BiCl52- and BiCl63-. The number of Cl atoms coordinated to Bi(III) decreases with increasing temperature; at around 200 degrees C and above, Bi(III) is coordinated to three Cl atoms. Overall the data show that Te(IV) chloride complexes can be ignored in predicting Te mobility under oxidizing conditions in most geological environments, but that Bi(III) chloride complexes are expected to account for Bi mobility in acidic brines. New thermodynamic properties for Bi(III) chloride complexes are provided to improve reactive transport modeling of Bi up to 500 degrees C. Although higher order complexes such as BiCl52- and BiCl63- exist at ambient temperature, the BiCl3(aq) complex becomes the predominant chloride complex in saline solutions at T >= 200 degrees C.« less

Tunable Intrinsic Spin Hall Conductivities in Bi2(Se,Te)3 Topological Insulators

NASA Astrophysics Data System (ADS)

Şahin, Cüneyt; Flatté, Michael E.

2015-03-01

It has been recently shown by spin-transfer torque measurements that Bi2Se3 exhibits a very large spin Hall conductivity (SHC). It is expected that Bi2Te3, a topological insulator with similar crystal and band structures as well as large spin-orbit coupling, would also exhibit a giant SHC. In this study we have calculated intrinsic spin Hall conductivities of Bi2Se3andBi2Te3 topological insulators from a tight-binding Hamiltonian including two nearest-neighbor interactions. We have calculated the Berry curvature, used the Kubo formula in the static, clean limit and shown that both materials exhibit giant spin Hall conductivities, consistent with the results of Ref. 1 and larger than previously reported Bi1-xSbx alloys. The density of Berry curvature has also been computed from the full Brillouin zone in order to compute the dependence of the SHC in these materials on the Fermi energy. Finally we report the intrinsic SHC for Bi2(Se,Te)3 topological insulators, which changes dramatically with doping or gate voltage. This work was supported in part by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

The electronic structure and thermoelectric properties of BiTl{sub 9}Te{sub 6} and SbTl{sub 9}Te{sub 6}: First-principles calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Li Bin; Ye, Lingyun; Wang, Yuan Xu, E-mail: wangyx@henu.edu.cn

2015-12-21

The electronic structure and thermoelectric properties of MTl{sub 9}Te{sub 6} (M = Bi, Sb) were studied using density functional theory and the semiclassical Boltzmann theory. It is found that the band gaps of BiTl{sub 9}Te{sub 6} and SbTl{sub 9}Te{sub 6} are equal to 0.59 eV and 0.72 eV, respectively. The relative large band gap and strong coupling between Sb s and Te p are helpful to the thermoelectric properties of SbTl{sub 9}Te{sub 6}. Near the bottom of the conduction bands, the number of band valleys of SbTl{sub 9}Te{sub 6} is four and is larger than that of BiTl{sub 9}Te{sub 6} (two band valleys),more » which will increase its Seebeck coefficient. Although BiTl{sub 9}Te{sub 6} has a larger electrical conductivity relative to relaxation time (σ/τ) along the z-direction than that of SbTl{sub 9}Te{sub 6}, the results show that the transport properties of SbTl{sub 9}Te{sub 6} are better than those of BiTl{sub 9}Te{sub 6} possibly due to its large Seebeck coefficient. The maximum value of power factor relative to relaxation time (S{sup 2}σ/τ) for SbTl{sub 9}Te{sub 6} reaches 4.30 × 10{sup 11 }W/K{sup 2} m s at 900 K, that is, originated from its relatively large Seebeck coefficient, suggesting its promising thermoelectric performance at high temperature.« less

Colloidal Synthesis of Te-Doped Bi Nanoparticles: Low-Temperature Charge Transport and Thermoelectric Properties.

PubMed

Gu, Da Hwi; Jo, Seungki; Jeong, Hyewon; Ban, Hyeong Woo; Park, Sung Hoon; Heo, Seung Hwae; Kim, Fredrick; Jang, Jeong In; Lee, Ji Eun; Son, Jae Sung

2017-06-07

Electronically doped nanoparticles formed by incorporation of impurities have been of great interest because of their controllable electrical properties. However, the development of a strategy for n-type or p-type doping on sub-10 nm-sized nanoparticles under the quantum confinement regime is very challenging using conventional processes, owing to the difficulty in synthesis. Herein, we report the colloidal chemical synthesis of sub-10 nm-sized tellurium (Te)-doped Bismuth (Bi) nanoparticles with precisely controlled Te content from 0 to 5% and systematically investigate their low-temperature charge transport and thermoelectric properties. Microstructural characterization of nanoparticles demonstrates that Te ions are successfully incorporated into Bi nanoparticles rather than remaining on the nanoparticle surfaces. Low-temperature Hall measurement results of the hot-pressed Te-doped Bi-nanostructured materials, with grain sizes ranging from 30 to 60 nm, show that the charge transport properties are governed by the doping content and the related impurity and nanoscale grain boundary scatterings. Furthermore, the low-temperature thermoelectric properties reveal that the electrical conductivity and Seebeck coefficient expectedly change with the Te content, whereas the thermal conductivity is significantly reduced by Te doping because of phonon scattering at the sites arising from impurities and nanoscale grain boundaries. Accordingly, the 1% Te-doped Bi sample exhibits a higher figure-of-merit ZT by ∼10% than that of the undoped sample. The synthetic strategy demonstrated in this study offers the possibility of electronic doping of various quantum-confined nanoparticles for diverse applications.

Intrinsic Topological Insulator Bi1.5Sb0.5Te3-xSex Thin Crystals

NASA Astrophysics Data System (ADS)

Wang, Wei; Li, Li; Zou, Wenqin; He, Liang; Song, Fengqi; Zhang, Rong; Wu, Xiaoshan; Zhang, Fengming

2015-01-01

The quaternary topological insulator (Bi,Sb)2(Te,Se)3 has demonstrated topological surface states with an insulating bulk. Scientists have identified an optimized composition of Bi1.5Sb0.5Te1.7Se1.3 with the highest resistivity reported. But the physics that drive to this composition remains unclear. Here we report the crystal structure and the magneto-transport properties of Bi1.5Sb0.5Te3-xSex (BSTS) series. A correlation between the structure and the physical properties has been revealed. We found out that within the rhombohedral structure, the composition with most Te substituting Se has the highest resistivity. On the other hand, segregation of other composition phases will introduce much higher bulk concentration.

Surface State-Dominated Photoconduction and THz Generation in Topological Bi2Te2Se Nanowires

PubMed Central

2017-01-01

Topological insulators constitute a fascinating class of quantum materials with nontrivial, gapless states on the surface and insulating bulk states. By revealing the optoelectronic dynamics in the whole range from femto- to microseconds, we demonstrate that the long surface lifetime of Bi2Te2Se nanowires allows us to access the surface states by a pulsed photoconduction scheme and that there is a prevailing bolometric response of the surface states. The interplay of the surface and bulk states dynamics on the different time scales gives rise to a surprising physical property of Bi2Te2Se nanowires: their pulsed photoconductance changes polarity as a function of laser power. Moreover, we show that single Bi2Te2Se nanowires can be used as THz generators for on-chip high-frequency circuits at room temperature. Our results open the avenue for single Bi2Te2Se nanowires as active modules in optoelectronic high-frequency and THz circuits. PMID:28081604

Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

NASA Astrophysics Data System (ADS)

Arnold, Fabian; Warmuth, Jonas; Michiardi, Matteo; Fikáček, Jan; Bianchi, Marco; Hu, Jin; Mao, Zhiqiang; Miwa, Jill; Singh, Udai Raj; Bremholm, Martin; Wiesendanger, Roland; Honolka, Jan; Wehling, Tim; Wiebe, Jens; Hofmann, Philip

2018-02-01

The electronic structure of thin films of FeTe grown on Bi2Te3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi2Te3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film’s electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film’s high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

Synthesis and thermoelectric properties of Rashba semiconductor BiTeBr with intensive texture.

PubMed

Xin, Jia-Zhan; Fu, Chen-Guang; Shi, Wu-Jun; Li, Guo-Wei; Auffermann, Gudrun; Qi, Yan-Peng; Zhu, Tie-Jun; Zhao, Xin-Bing; Felser, Claudia

2018-01-01

Bismuth tellurohalides with Rashba-type spin splitting exhibit unique Fermi surface topology and are developed as promising thermoelectric materials. However, BiTeBr, which belongs to this class of materials, is rarely investigated in terms of the thermoelectric transport properties. In the study, polycrystalline bulk BiTeBr with intensive texture was synthesized via spark plasma sintering (SPS). Additionally, its thermoelectric properties above room temperature were investigated along both the in-plane and out-plane directions, and they exhibit strong anisotropy. Low sound velocity along two directions is found and contributes to its low lattice thermal conductivity. Polycrystalline BiTeBr exhibits relatively good thermoelectric performance along the in-plane direction, with a maximum dimensionless figure of merit (ZT) of 0.35 at 560 K. Further enhancements of ZT are expected by utilizing systematic optimization strategies.

Structural and thermoelectric properties of epitaxially grown Bi2Te3 thin films and superlattices

NASA Astrophysics Data System (ADS)

Peranio, N.; Eibl, O.; Nurnus, J.

2006-12-01

Multi-quantum-well structures of Bi2Te3 are predicted to have a high thermoelectric figure of merit ZT. Bi2Te3 thin films and Bi2Te3/Bi2(Te0.88Se0.12)3 superlattices (SLs) were grown epitaxially by molecular beam epitaxy on BaF2 substrates with periods of 12 and 6nm, respectively. Reflection high-energy electron diffraction confirmed a layer-by-layer growth, x-ray diffraction yielded the lattice parameters and SL periods and proved epitaxial growth. The in-plane transport coefficients were measured and the thin films and SL had power factors between 28 and 35μW /cmK2. The lattice thermal conductivity varied between 1.60W/mK for Bi2Te3 thin films and 1.01W/mK for a 10nm SL. The best figures of merit ZT were achieved for the SL; however, the values are slightly smaller than those in bulk materials. Thin films and superlattices were investigated in plan view and cross section by transmission electron microscopy. In the Bi2Te3 thin film and SL the dislocation density was found to be 2×1010cm-2. Bending of the SL with amplitudes of 30nm (12nm SL) and 15nm (6nm SL) and a wavelength of 400nm was determined. Threading dislocations were found with a density greater than 2×109cm-2. The superlattice interfaces are strongly bent in the region of the threading dislocations, undisturbed regions have a maximum lateral sie of 500nm. Thin films and SL showed a structural modulation [natural nanostructure (nns)] with a wavelength of 10nm and a wave vector parallel to (1,0,10). This nns was also observed in Bi2Te3 bulk materials and turned out to be of general character for Bi2Te3. The effect of the microstructure on the thermoelectric properties is discussed. The microstructure is governed by the superlattice, the nns, and the dislocations that are present in the films. Our results indicate that the microstructure directly affects the lattice thermal conductivity. Thermopower and electrical conductivity were found to be negatively correlated and no clear dependence of the two

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi.

PubMed

Srinivasan, Bhuvanesh; Boussard-Pledel, Catherine; Dorcet, Vincent; Samanta, Manisha; Biswas, Kanishka; Lefèvre, Robin; Gascoin, Franck; Cheviré, François; Tricot, Sylvain; Reece, Michael; Bureau, Bruno

2017-03-23

Chalcogenide semiconducting systems are of growing interest for mid-temperature range (~500 K) thermoelectric applications. In this work, Ge 20 Te 77 Se₃ glasses were intentionally crystallized by doping with Cu and Bi. These effectively-crystallized materials of composition (Ge 20 Te 77 Se₃) 100- x M x (M = Cu or Bi; x = 5, 10, 15), obtained by vacuum-melting and quenching techniques, were found to have multiple crystalline phases and exhibit increased electrical conductivity due to excess hole concentration. These materials also have ultra-low thermal conductivity, especially the heavily-doped (Ge 20 Te 77 Se₃) 100- x Bi x ( x = 10, 15) samples, which possess lattice thermal conductivity of ~0.7 Wm -1 K -1 at 525 K due to the assumable formation of nano-precipitates rich in Bi, which are effective phonon scatterers. Owing to their high metallic behavior, Cu-doped samples did not manifest as low thermal conductivity as Bi-doped samples. The exceptionally low thermal conductivity of the Bi-doped materials did not, alone, significantly enhance the thermoelectric figure of merit, zT. The attempt to improve the thermoelectric properties by crystallizing the chalcogenide glass compositions by excess doping did not yield power factors comparable with the state of the art thermoelectric materials, as these highly electrically conductive crystallized materials could not retain the characteristic high Seebeck coefficient values of semiconducting telluride glasses.

Effects of Mass Fluctuation on Thermal Transport Properties in Bulk Bi2Te3

NASA Astrophysics Data System (ADS)

Huang, Ben; Zhai, Pengcheng; Yang, Xuqiu; Li, Guodong

2017-05-01

In this paper, we applied large-scale molecular dynamics and lattice dynamics to study the influence of mass fluctuation on thermal transport properties in bulk Bi2Te3, namely thermal conductivity ( K), phonon density of state (PDOS), group velocity ( v g), and mean free path ( l). The results show that total atomic mass change can affect the relevant vibrational frequency on the micro level and heat transfer rate in the macro statistic, hence leading to the strength variation of the anharmonic phonon processes (Umklapp scattering) in the defect-free Bi2Te3 bulk. Moreover, it is interesting to find that the anharmonicity of Bi2Te3 can be also influenced by atomic differences of the structure such as the mass distribution in the primitive cell. Considering the asymmetry of the crystal structure and interatomic forces, it can be concluded by phonon frequency, lifetime, and velocity calculation that acoustic-optical phonon scattering shows the structure-sensitivity to the mass distribution and complicates the heat transfer mechanism, hence resulting in the low lattice thermal conductivity of Bi2Te3. This study is helpful for designing the material with tailored thermal conductivity via atomic substitution.

Surface state-dominated photoconduction and THz-generation in topological Bi2Te2Se-nanowires

NASA Astrophysics Data System (ADS)

Seifert, Paul; Vaklinova, Kristina; Kern, Klaus; Burghard, Marko; Holleitner, Alexander

Topological insulators constitute a fascinating class of quantum materials with non-trivial, gapless states on the surface and trivial, insulating bulk states. In revealing the optoelectronic dynamics in the whole range from femto- to microseconds, we demonstrate that the long surface lifetime of Bi2Te2Se-nanowires allows to access the surface states by a pulsed photoconduction scheme and that there is a prevailing bolometric response of the surface states. The interplay of the surface state dynamics on the different timescales gives rise to a surprising physical property of Bi2Te2Se-nanowires: their pulsed photoconductance changes polarity as a function of laser power. Moreover, we show that single Bi2Te2Se-nanowires can be used as THz-generators for on-chip high-frequency circuits at room temperature. Our results open the avenue for single Bi2Te2Se-nanowires as active modules in optoelectronic high-frequency and THz-circuits. We acknowledge financial support by the ERC Grant NanoReal (n306754).

Fe-Doping Effect on Thermoelectric Properties of p-Type Bi0.48Sb1.52Te3

PubMed Central

Mun, Hyeona; Lee, Kyu Hyoung; Kim, Suk Jun; Kim, Jong-Young; Lee, Jeong Hoon; Lim, Jae-Hong; Park, Hee Jung; Roh, Jong Wook; Kim, Sung Wng

2015-01-01

The substitutional doping approach has been shown to be an effective strategy to improve ZT of Bi2Te3-based thermoelectric raw materials. We herein report the Fe-doping effects on electronic and thermal transport properties of polycrystalline bulks of p-type Bi0.48Sb1.52Te3. After a small amount of Fe-doping on Bi/Sb-sites, the power factor could be enhanced due to the optimization of carrier concentration. Additionally, lattice thermal conductivity was reduced by the intensified point-defect phonon scattering originating from the mass difference between the host atoms (Bi/Sb) and dopants (Fe). An enhanced ZT of 1.09 at 300 K was obtained in 1.0 at% Fe-doped Bi0.48Sb1.52Te3 by these synergetic effects. PMID:28787981

Few-layer nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with highly tunable chemical potential.

PubMed

Kong, Desheng; Dang, Wenhui; Cha, Judy J; Li, Hui; Meister, Stefan; Peng, Hailin; Liu, Zhongfan; Cui, Yi

2010-06-09

A topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk band gap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that group V-VI materials Bi(2)Se(3), Bi(2)Te(3), and Sb(2)Te(3) are TIs with a single Dirac cone on the surface. These materials have anisotropic, layered structures, in which five atomic layers are covalently bonded to form a quintuple layer, and quintuple layers interact weakly through van der Waals interaction to form the crystal. A few quintuple layers of these materials are predicted to exhibit interesting surface properties. Different from our previous nanoribbon study, here we report the synthesis and characterizations of ultrathin Bi(2)Te(3) and Bi(2)Se(3) nanoplates with thickness down to 3 nm (3 quintuple layers), via catalyst-free vapor-solid (VS) growth mechanism. Optical images reveal thickness-dependent color and contrast for nanoplates grown on oxidized silicon (300 nm SiO(2)/Si). As a new member of TI nanomaterials, ultrathin TI nanoplates have an extremely large surface-to-volume ratio and can be electrically gated more effectively than the bulk form, potentially enhancing surface state effects in transport measurements. Low-temperature transport measurements of a single nanoplate device, with a high-k dielectric top gate, show decrease in carrier concentration by several times and large tuning of chemical potential.

Observation of antiphase coherent phonons in the warped Dirac cone of Bi2Te3

NASA Astrophysics Data System (ADS)

Golias, E.; Sánchez-Barriga, J.

2016-10-01

In this Rapid Communication we investigate the coupling between excited electrons and phonons in the highly anisotropic electronic structure of the prototypical topological insulator Bi2Te3 . Using time- and angle-resolved photoemission spectroscopy we are able to identify the emergence and ultrafast temporal evolution of the longitudinal-optical A1 g coherent-phonon mode in Bi2Te3 . We observe an antiphase behavior in the onset of the coherent-phonon oscillations between the Γ K ¯ and the Γ M ¯ high-symmetry directions that is consistent with warping. The qualitative agreement between our density-functional theory calculations and the experimental results reveals the critical role of the anisotropic coupling between Dirac fermions and phonon modes in the topological insulator Bi2Te3 .

Fabrication of large-scale single-crystal bismuth telluride (Bi2Te3) nanosheet arrays by a single-step electrolysis process

NASA Astrophysics Data System (ADS)

Tsai, Hung-Wei; Wang, Tsang-Hsiu; Chan, Tsung-Cheng; Chen, Pei-Ju; Chung, Chih-Chun; Yaghoubi, Alireza; Liao, Chien-Neng; Diau, Eric Wei-Guang; Chueh, Yu-Lun

2014-06-01

Nanolizing of thermoelectric materials is one approach to reduce the thermal conductivity and hence enhance the figure of merit. Bismuth telluride (Bi2Te3)-based materials have excellent figure of merit at room temperature. For device applications, precise control and rapid fabrication for the nanostructure of thermoelectric materials are essential issues. In the present study, we demonstrate a one-step electrolysis process to directly form Bi2Te3 nanosheet arrays (NSAs) on the surface of bulk Bi2Te3 with controllable spacing distance and depth by tuning the applied bias and duration. The single sheet of NSAs reveals that the average thickness and electrical resistivity of single crystalline Bi2Te3 in composition are 399.8 nm and 137.34 μΩ m, respectively. The formation mechanism of NSAs has been proposed. A 1.12% efficiency of quantum dot-sensitized solar cells with Bi2Te3 NSAs for counter electrode has been demonstrated, indicating that Bi2Te3 NSAs from top-down processing with a high ratio of surface area to volume are a promising candidate for possible applications such as thermoelectrics, dye-sensitized solar cells (DSSCs), and lithium-ion batteries.Nanolizing of thermoelectric materials is one approach to reduce the thermal conductivity and hence enhance the figure of merit. Bismuth telluride (Bi2Te3)-based materials have excellent figure of merit at room temperature. For device applications, precise control and rapid fabrication for the nanostructure of thermoelectric materials are essential issues. In the present study, we demonstrate a one-step electrolysis process to directly form Bi2Te3 nanosheet arrays (NSAs) on the surface of bulk Bi2Te3 with controllable spacing distance and depth by tuning the applied bias and duration. The single sheet of NSAs reveals that the average thickness and electrical resistivity of single crystalline Bi2Te3 in composition are 399.8 nm and 137.34 μΩ m, respectively. The formation mechanism of NSAs has been proposed. A 1

Two-dimensional bismuth-rich nanosheets through the evaporative thinning of Se-doped Bi2Te3

NASA Astrophysics Data System (ADS)

Hanson, Eve D.; Shi, Fengyuan; Chasapis, Thomas C.; Kanatzidis, Mercouri G.; Dravid, Vinayak P.

2016-02-01

High bulk conductance obscures the behavior of surface states in the prototypical topological insulators Bi2Te3 and Bi2Se3. However, ternary phases of Bi2Te3-ySey with balanced donor and acceptor levels may lead to large bulk resistivity, allowing for the observation of the surface states. Additionally, the contribution of the bulk conductance may be further suppressed by nanostructuring, increasing the surface-to-volume ratio. Herein we report the synthesis of a ternary tetradymite newly confined to two dimensions. Ultra-thin large-area stable nanosheets were fabricated via evaporative thinning of a Bi2Te2.9Se0.1 original phase. Owing to vapor pressure differences, a compositional shift to a final Bi-rich phase is observed. The Se/Te ratio of the nanosheet increases tenfold, due to the higher stability of the Bi-Se bonds. Hexagonal crystal symmetry is maintained despite dramatic changes in thickness and stoichiometry. Given that small variations in stoichiometry of this ternary system can incur large changes in carrier concentration and switch majority carrier type, the large compositional shifts found in this case imply that compositional analysis of similar CVD and PVD grown materials is critical to correctly interpret topological insulator performance. Further, the characterization techniques deployed, including STEM-EDS and ToF-SIMS, serve as a case study in determining such compositional shifts in two-dimensional form.

Phase equilibria in the Bi 2TeO 5Bi 2SeO 5 system and a high temperature neutron powder diffraction study of Bi 2SeO 5

NASA Astrophysics Data System (ADS)

Dityatyev, Oleg A.; Smidt, Peer; Stefanovich, Sergey Yu; Lightfoot, Philip; Dolgikh, Valery A.; Opperman, Heinrich

2004-09-01

Phase equilibria in the Bi 2TeO 5Bi 2SeO 5 system were studied by X-ray, DTA and second harmonic generation (SHG). The samples were synthesized by solid state reactions of the Bi, Te and Se oxides. The phase diagram is interpreted as a quasibinary peritectic one with wide ranges of solid solutions on the basis of both compounds. The SHG study showed Bi 2SeO 5 to undergo a phase transition at about 250 °C. Neutron diffraction (25-650 °C) showed no major changes in the structure of Bi 2SeO 5 at high temperatures. However, the analysis of the oxygen atom thermal factors and site occupancies suggested that the mechanism of the phase transformation is an order-disorder transition involving reorientation of the SeO 3 group.

To study the linear and nonlinear optical properties of Se-Te-Bi-Sn/PVP (polyvinylpyrrolidone) nanocomposites

NASA Astrophysics Data System (ADS)

Tyagi, Chetna; Yadav, Preeti; Sharma, Ambika

2018-05-01

The present work reveals the optical study of Se82Te15Bi1.0Sn2.0/polyvinylpyrrolidone (PVP) nanocomposites. Bulk glasses of chalcogenide was prepared by well-known melt quenching technique. Wet chemical technique is proposed for making the composite of Se82Te15Bi1.0Sn2.0 and PVP polymer as it is easy to handle and cost effective. The composites films were made on glass slide from the solution of Se-Te-Bi-Sn and PVP polymer using spin coating technique. The transmission as well as absorbance is recorded by using UV-Vis-NIR spectrophotometer in the spectral range 350-700 nm. The linear refractive index (n) of polymer nanocomposites are calculated by Swanepoel approach. The linear refractive index (n) PVP doped Se82Te15Bi1.0Sn2.0 chalcogenide is found to be 1.7. The optical band gap has been evaluated by means of Tauc extrapolation method. Tichy and Ticha model was utilized for the characterization of nonlinear refractive index (n2).

Evolution of thermoelectric performance for (Bi,Sb){sub 2}Te{sub 3} alloys from cutting waste powders to bulks with high figure of merit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fan, Xi'an, E-mail: groupfxa@163.com; Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081; School of Materials and Metallurgy, Wuhan University of Science and Technology, 947 Heping Road, Qingshan District, Wuhan 430081

Bi{sub 2}Te{sub 3} based cutting waste powders from cutting wafers were firstly selected as raw materials to prepare p-type Bi{sub 2}Te{sub 3} based thermoelectric (TE) materials. Through washing, reducing, composition correction, smelting and resistance pressing sintering (RPS) process, p-type (Bi,Sb){sub 2}Te{sub 3} alloy bulks with different nominal stoichiometries were successfully obtained. The evolution of microstructure and TE performance for (Bi,Sb){sub 2}Te{sub 3} alloys were investigated in detail. All evidences confirmed that most of contaminants from line cutting process such as cutting fluid and oxides of Bi, Sb or Te could be removed by washing, reducing and smelting process used inmore » this work. The carrier content and corresponding TE properties could be adjusted effectively by appropriate composition correction treatment. At lastly, a bulk with a nominal stoichiometry of Bi{sub 0.44}Sb{sub 1.56}Te{sub 3} was obtained and its' dimensionless figure of merit (ZT) was about 1.16 at 90 °C. The ZT values of Bi{sub 0.36}Sb{sub 1.64}Te{sub 3} and Bi{sub 0.4}Sb{sub 1.6}Te{sub 3} alloy bulks could also reach 0.98 and 1.08, respectively. Different from the conventional recycling technology such as hydrometallurgy extraction methods, the separation and extraction of beneficial elements such as Bi, Sb and Te did not need to be performed and the Bi{sub 2}Te{sub 3} based bulks with high TE properties could be directly obtained from the cutting waste powders. In addition, the recycling technology introduced here was green and more suitable for practical industrial application. It can improve material utilization and lower raw material costs of manufacturers. - Graphical abstract: Three kinds of typical morphologies for the fractographs: typical lamellar structure, agglomerated submicron-sized granules and dispersed cubic particles from the initial cutting waste powders. - Highlights: • Bi{sub 2}Te{sub 3} based wastes were directly selected as raw materials

Spin splitting in band structures of BiTeX (X=Cl, Br, I) monolayers

NASA Astrophysics Data System (ADS)

Hvazdouski, D. C.; Baranava, M. S.; Stempitsky, V. R.

2018-04-01

In systems with breaking of inversion symmetry a perpendicular electric field arises that interacts with the conduction electrons. It may give rise to electron state splitting even without influence of external magnetic field due to the spin-orbital interaction (SOI). Such a removal of the spin degeneracy is called the Rashba effect. Nanostructure with the Rashba effect can be part of a spin transistor. Spin degeneracy can be realized in a channel from a material of this type without additive of magnetic ions. Lack of additive increases the charge carrier mobility and reliability of the device. Ab initio simulations of BiTeX (X=Cl, Br, I) monolayers have been carried out using VASP wherein implemented DFT method. The study of this structures is of interest because such sort of structures can be used their as spin-orbitronics materials. The crystal parameters of BiTeCl, BiTeBr, BiTeI have been determined by the ionic relaxation and static calculations. It is necessary to note that splitting of energy bands occurs in case of SOI included. The values of the Rashba coefficient aR (in the range from 6.25 to 10.00 eV·Å) have high magnitudes for spintronics materials. Band structure of monolayers structures have ideal Rashba electron gas, i.e. there no other energy states near to Fermi level except Rashba states.

A numerical study of zone-melting process for the thermoelectric material of Bi2Te3

NASA Astrophysics Data System (ADS)

Chen, W. C.; Wu, Y. C.; Hwang, W. S.; Hsieh, H. L.; Huang, J. Y.; Huang, T. K.

2015-06-01

In this study, a numerical model has been established by employing a commercial software; ProCAST, to simulate the variation/distribution of temperature and the subsequent microstructure of Bi2Te3 fabricated by zone-melting technique. Then an experiment is conducted to measure the temperature variation/distribution during the zone-melting process to validate the numerical system. Also, the effects of processing parameters on crystallization microstructure such as moving speed and temperature of heater are numerically evaluated. In the experiment, the Bi2Te3 powder are filled into a 30mm diameter quartz cylinder and the heater is set to 800°C with a moving speed 12.5 mm/hr. A thermocouple is inserted in the Bi2Te3 powder to measure the temperature variation/distribution of the zone-melting process. The temperature variation/distribution measured by experiment is compared to the results of numerical simulation. The results show that our model and the experiment are well matched. Then the model is used to evaluate the crystal formation for Bi2Te3 with a 30mm diameter process. It's found that when the moving speed is slower than 17.5 mm/hr, columnar crystal is obtained. In the end, we use this model to predict the crystal formation of zone-melting process for Bi2Te3 with a 45 mm diameter. The results show that it is difficult to grow columnar crystal when the diameter comes to 45mm.

Thermoelectric Properties of Highly-Crystallized Ge-Te-Se Glasses Doped with Cu/Bi

PubMed Central

Srinivasan, Bhuvanesh; Boussard-Pledel, Catherine; Dorcet, Vincent; Samanta, Manisha; Biswas, Kanishka; Lefèvre, Robin; Gascoin, Franck; Cheviré, François; Tricot, Sylvain; Reece, Michael; Bureau, Bruno

2017-01-01

Chalcogenide semiconducting systems are of growing interest for mid-temperature range (~500 K) thermoelectric applications. In this work, Ge20Te77Se3 glasses were intentionally crystallized by doping with Cu and Bi. These effectively-crystallized materials of composition (Ge20Te77Se3)100−xMx (M = Cu or Bi; x = 5, 10, 15), obtained by vacuum-melting and quenching techniques, were found to have multiple crystalline phases and exhibit increased electrical conductivity due to excess hole concentration. These materials also have ultra-low thermal conductivity, especially the heavily-doped (Ge20Te77Se3)100−xBix (x = 10, 15) samples, which possess lattice thermal conductivity of ~0.7 Wm−1 K−1 at 525 K due to the assumable formation of nano-precipitates rich in Bi, which are effective phonon scatterers. Owing to their high metallic behavior, Cu-doped samples did not manifest as low thermal conductivity as Bi-doped samples. The exceptionally low thermal conductivity of the Bi-doped materials did not, alone, significantly enhance the thermoelectric figure of merit, zT. The attempt to improve the thermoelectric properties by crystallizing the chalcogenide glass compositions by excess doping did not yield power factors comparable with the state of the art thermoelectric materials, as these highly electrically conductive crystallized materials could not retain the characteristic high Seebeck coefficient values of semiconducting telluride glasses. PMID:28772687

Yb-doped passively mode-locked fiber laser with Bi2Te3-deposited

NASA Astrophysics Data System (ADS)

Li, Lu; Yan, Pei-Guang; Wang, Yong-Gang; Duan, Li-Na; Sun, Hang; Si, Jin-Hai

2015-12-01

In this study we present an all-normal-dispersion Yb-doped fiber laser passively mode-locked with topological insulator (Bi2Te3) saturable absorber. The saturable absorber device is fabricated by depositing Bi2Te3 on a tapered fiber through using pulsed laser deposition (PLD) technology, which can give rise to less non-saturable losses than most of the solution processing methods. Owing to the long interaction length, Bi2Te3 is not exposed to high optical power, which allows the saturable absorber device to work in a high power regime. The modulation depth of this kind of saturable absorber is measured to be 10%. By combining the saturable absorber device with Yb-doped fiber laser, a mode-locked pulse operating at a repetition rate of 19.8 MHz is achieved. The 3-dB spectral width and pulse duration are measured to be 1.245 nm and 317 ps, respectively. Project supported by the National Natural Science Foundation of China (Grant No. 61378024) and the Natural Science Fund of Guangdong Province, China (Grant No. S2013010012235).

Thermomechanical In Situ Monitoring of Bi2Te3 Thin Film and Its Relationship with Microstructure and Thermoelectric Performances

NASA Astrophysics Data System (ADS)

Jeong, Min-Woo; Na, Sekwon; Shin, Haishan; Park, Hong-Bum; Lee, Hoo-Jeong; Joo, Young-Chang

2018-04-01

Performance enhancement has been studied for thin-film thermoelectric materials for small-scale energy applications. The microstructural evolution of bismuth telluride (Bi2Te3) was investigated with respect to performance enhancement via in situ thermomechanical analysis due to the post-annealing process. The thermomechanical behavior of Bi2Te3 changes gradually at approximately 200 °C with the formation of a quintuple-layer structure, which was confirmed by X-ray diffraction, transmission electron microscopy and Raman spectroscopy. It was found that highly oriented (006), (0015) was formed with a quintuple-layer structure parallel to the substrate, and the Eg 2Raman vibration mode of Bi2Te3 significantly increased after forming the layer structure with decreased defects. Therefore, the slope of the stress curve was affected by the longer atomic distance of the van der Waals bonds with the formation of (00l) oriented layered-structure grain. The decreased number of defects in the layer structure affects the electrical and thermal properties of the Bi2Te3 thin film. Due to the microstructural evolution, the power factor of Bi2Te3 was enhanced by approximately 14.8 times by the quintuple-layer structure of Bi2Te3 formed during the annealing process, which contributed to a better understanding of the performance enhancement via post-annealing and to research on other highly oriented layer structure materials.

Annealing effects on room temperature thermoelectric performance of p-type thermally evaporated Bi-Sb-Te thin films

NASA Astrophysics Data System (ADS)

Singh, Sukhdeep; Singh, Janpreet; Tripathi, S. K.

2018-05-01

Bismuth antimony telluride (Bi-Sb-Te) compounds have been investigated for the past many decades for thermoelectric (TE) power generation and cooling purpose. We synthesized this compound with a stoichiometry Bi1.2Sb0.8Te3 through melt cool technique and thin films of as synthesized material were deposited by thermal evaporation. The prime focus of the present work is to study the influence of annealing temperature on the room temperature (RT) power factor of thin films. Electrical conductivity and Seebeck coefficient were studied and power factors were calculated which showed a peak value at 323 K. The compounds performance is comparable to some very efficient Bi-Sb-Te reported stoichiometries at RT scale. The values observed show that material has an enormous potential for energy production at ambient temperature scales.

Roles of Cu in the Enhanced Thermoelectric Properties in Bi0.5Sb1.5Te3

PubMed Central

Hao, Feng; Qiu, Pengfei; Song, Qingfeng; Chen, Hongyi; Lu, Ping; Ren, Dudi; Shi, Xun; Chen, Lidong

2017-01-01

Recently, Cu-containing p-type Bi0.5Sb1.5Te3 materials have shown high thermoelectric performances and promising prospects for practical application in low-grade waste heat recovery. However, the position of Cu in Bi0.5Sb1.5Te3 is controversial, and the roles of Cu in the enhancement of thermoelectric performance are still not clear. In this study, via defects analysis and stability test, the possibility of Cu intercalation in p-type Bi0.5Sb1.5Te3 materials has been excluded, and the position of Cu is identified as doping at the Sb sites. Additionally, the effects of Cu dopants on the electrical and thermal transport properties have been systematically investigated. Besides introducing additional holes, Cu dopants can also significantly enhance the carrier mobility by decreasing the Debye screen length and weakening the interaction between carriers and phonons. Meanwhile, the Cu dopants interrupt the periodicity of lattice vibration and bring stronger anharmonicity, leading to extremely low lattice thermal conductivity. Combining the suppression on the intrinsic excitation, a high thermoelectric performance—with a maximum thermoelectric figure of merit of around 1.4 at 430 K—has been achieved in Cu0.005Bi0.5Sb1.495Te3, which is 70% higher than the Bi0.5Sb1.5Te3 matrix. PMID:28772610

From thermoelectric bulk to nanomaterials: Current progress for Bi 2 Te 3 and CoSb 3: From thermoelectric bulk to nanomaterials

DOE PAGES

Peranio, N.; Eibl, O.; Bäßler, S.; ...

2015-10-29

We synthesized Bi 2Te 3 and CoSb 3 based nanomaterials and their thermoelectric, structural, and vibrational properties analyzed to assess and reduce ZT-limiting mechanisms. The same preparation and/or characterization methods were applied in the different materials systems. Single-crystalline, ternary p-type Bi 15Sb 29Te 56, and n-type Bi 38Te 55Se 7 nanowires with power factors comparable to nanostructured bulkmaterialswere prepared by potential-pulsed electrochemical deposition in a nanostructured Al 2O 3 matrix. p-type Sb 2Te 3, n-type Bi 2Te 3, and n-type CoSb 3 thin films were grown at room temperature using molecular beam epitaxy and were subsequently annealed at elevated temperatures.more » It yielded polycrystalline, single phase thin films with optimized charge carrier densities. In CoSb 3 thin films the speed of sound could be reduced by filling the cage structure with Yb and alloying with Fe yielded p-type material. Bi 2(Te 0.91Se 0.09) 3/SiC and (Bi 0.26Sb 0.74) 2Te 3/SiC nanocomposites with low thermal conductivities and ZT values larger than 1 were prepared by spark plasma sintering. Nanostructure, texture, chemical composition, as well as electronic and phononic excitations were investigated by X-ray diffraction, nuclear resonance scattering, inelastic neutron scattering, M ossbauer spectroscopy, and transmission electron microscopy. Furthermore, for Bi 2Te 3 materials, ab-initio calculations together with equilibrium and non-equilibrium molecular dynamics simulations for point defects yielded their formation energies and their effect on lattice thermal conductivity, respectively. Current advances in thermoelectric Bi 2Te 3 and CoSb 3 based nanomaterials are summarized. Advanced synthesis and characterization methods and theoreticalmodelingwere combined to assess and reduce ZT-limiting mechanisms in these materials.« less

A Micro-Raman Study of Exfoliated Few-Layered n-Type Bi2Te2.7Se0.3 (Postprint)

DTIC Science & Technology

2017-11-28

filtering process. 15. SUBJECT TERMS thermoelectric (TE); bulk n-type Bi2Te2.7Se0.3; chemical or mechanical exfoliation; densification; restacking...enhanced TE properties via the energy filtering process. Bulk pristine (undoped) and doped Bi2Te3 are some of the most efficient room temperature...and charged defect scattering dominates. Puneet et al. attributed the increase in n to selective filtering of charge carriers by positively charged

Structure and Thermoelectric Properties of Bi2−xSbxTe3 Nanowires Grown in Flexible Nanoporous Polycarbonate Templates

PubMed Central

Datta, Anuja; Sangle, Abhijeet; Hardingham, Nick; Cooper, Charles; Kraan, Max; Ritchie, David; Narayan, Vijay; Kar-Narayan, Sohini

2017-01-01

We report the room-temperature growth of vertically aligned ternary Bi2−xSbxTe3 nanowires of diameter ~200 nm and length ~12 µm, within flexible track-etched nanoporous polycarbonate (PC) templates via a one-step electrodeposition process. Bi2−xSbxTe3 nanowires with compositions spanning the entire range from pure Bi2Te3 (x = 0) to pure Sb2Te3 (x = 2) were systematically grown within the nanoporous channels of PC templates from a tartaric–nitric acid based electrolyte, at the end of which highly crystalline nanowires of uniform composition were obtained. Compositional analysis showed that the Sb concentration could be tuned by simply varying the electrolyte composition without any need for further annealing of the samples. Thermoelectric properties of the Bi2−xSbxTe3 nanowires were measured using a standardized bespoke setup while they were still embedded within the flexible PC templates. PMID:28772915

Electronic structure and x-ray magnetic circular dichroism in Mn-doped topological insulators Bi2Se3 and Bi2Te3

NASA Astrophysics Data System (ADS)

Antonov, V. N.; Bekenov, L. V.; Uba, S.; Ernst, A.

2017-12-01

We studied the structural, electronic, and magnetic properties of Mn-doped topological insulators Bi2Se3 and Bi2Te3 within the density-functional theory (DFT) using the generalized gradient approximation (GGA) in the framework of the fully relativistic spin-polarized Dirac linear muffin-tin orbital band-structure method. The x-ray absorption spectra (XAS) and x-ray magnetic circular dichroism at the Mn K and L2 ,3 edges were investigated theoretically from first principles. The calculated results are in good agreement with experimental data. The complex fine structure of the Mn L2 ,3 XAS in Mn-doped Bi2Se3 and Bi2Te3 was found to be not compatible with a pure Mn3 + valency state. Its interpretation demands mixed valent states. The theoretically calculated x-ray emission spectra at the Mn K and L2 ,3 edges are also presented and analyzed.

Thermomechanical In Situ Monitoring of Bi2Te3 Thin Film and Its Relationship with Microstructure and Thermoelectric Performances

NASA Astrophysics Data System (ADS)

Jeong, Min-Woo; Na, Sekwon; Shin, Haishan; Park, Hong-Bum; Lee, Hoo-Jeong; Joo, Young-Chang

2018-07-01

Performance enhancement has been studied for thin-film thermoelectric materials for small-scale energy applications. The microstructural evolution of bismuth telluride (Bi2Te3) was investigated with respect to performance enhancement via in situ thermomechanical analysis due to the post-annealing process. The thermomechanical behavior of Bi2Te3 changes gradually at approximately 200 °C with the formation of a quintuple-layer structure, which was confirmed by X-ray diffraction, transmission electron microscopy and Raman spectroscopy. It was found that highly oriented (006), (0015) was formed with a quintuple-layer structure parallel to the substrate, and the E g 2 Raman vibration mode of Bi2Te3 significantly increased after forming the layer structure with decreased defects. Therefore, the slope of the stress curve was affected by the longer atomic distance of the van der Waals bonds with the formation of (00 l) oriented layered-structure grain. The decreased number of defects in the layer structure affects the electrical and thermal properties of the Bi2Te3 thin film. Due to the microstructural evolution, the power factor of Bi2Te3 was enhanced by approximately 14.8 times by the quintuple-layer structure of Bi2Te3 formed during the annealing process, which contributed to a better understanding of the performance enhancement via post-annealing and to research on other highly oriented layer structure materials.

Hydrothermal Synthesis Au-Bi2Te3 Nanocomposite Thermoelectric Film with a Hierarchical Sub-Micron Antireflection Quasi-Periodic Structure.

PubMed

Tian, Junlong; Zhang, Wang; Zhang, Yuan; Xue, Ruiyang; Wang, Yuhua; Zhang, Zhijian; Zhang, Di

2015-06-03

In this work, Au-Bi(2)Te(3) nanocomposite thermoelectric film with a hierarchical sub-micron antireflection quasi-periodic structure was synthesized via a low-temperature chemical route using Troides helena (Linnaeus) forewing (T_FW) as the biomimetic template. This method combines chemosynthesis with biomimetic techniques, without the requirement of expensive equipment and energy intensive processes. The microstructure and the morphology of the Au-Bi(2)Te(3) nanocomposite thermoelectric film was analyzed by X-ray diffraction (XRD), field-emission scanning-electron microscopy (FESEM), and transmission electron microscopy (TEM). Coupled the plasmon resonances of the Au nanoparticles with the hierarchical sub-micron antireflection quasi-periodic structure, the Au-Bi(2)Te(3) nanocomposite thermoelectric film possesses an effective infrared absorption and infrared photothermal conversion performance. Based on the finite difference time domain method and the Joule effect, the heat generation and the heat source density distribution of the Au-Bi(2)Te(3) nanocomposite thermoelectric film were studied. The heterogeneity of heat source density distribution of the Au-Bi(2)Te(3) nanocomposite thermoelectric film opens up a novel promising technique for generating thermoelectric power under illumination.

Microstructural and magneto-transport characterization of Bi2SexTe3-x topological insulator thin films grown by pulsed laser deposition method

NASA Astrophysics Data System (ADS)

Jin, Zhenghe; Kumar, Raj; Hunte, Frank; Narayan, Jay; Kim, Ki Wook; North Carolina State University Team

Bi2SexTe3-x topological insulator thin films were grown on Al2O3 (0001) substrate by pulsed laser deposition (PLD). XRD and other structural characterization measurements confirm the growth of the textured Bi2SexTe3-x thin films on Al2O3 substrate. The magneto-transport properties of thick and thin Þlms were investigated to study the effect of thickness on the topological insulator properties of the Bi2SexTe3 - x films. A pronounced semiconducting behavior with a highly insulating ground state was observed in the resistivity vs. temperature data. The presence of the weak anti-localization (WAL) effect with a sharp cusp in the magnetoresistance measurements confirms the 2-D surface transport originating from the TSS in Bi2SexTe3-x TI films. A high fraction of surface transport is observed in the Bi2SexTe3-x TI thin films which decreases in Bi2SexTe3-x TI thick films. The Cosine (θ) dependence of the WAL effect supports the observation of a high proportion of 2-D surface state contribution to overall transport properties of the Bi2SexTe3-x TI thin films. Our results show promise that high quality Bi2SexTe3-x TI thin films with significant surface transport can be grown by PLD method to exploit the exotic properties of the surface transport in future generation spintronic devices. This work was supported, in part, by National Science Foundation ECCS-1306400 and FAME.

Role of defects in the carrier-tunable topological-insulator (Bi1 -xSbx )2Te3 thin films

NASA Astrophysics Data System (ADS)

Scipioni, Kane L.; Wang, Zhenyu; Maximenko, Yulia; Katmis, Ferhat; Steiner, Charlie; Madhavan, Vidya

2018-03-01

Alloys of Bi2Te3 and Sb2Te3[(Bi1-xSbx) 2Te3] have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Despite intensive transport and angle resolved photoemission (ARPES) studies, important questions about this system remain unanswered. For example, previous studies reported the chemical tuning of the Fermi level to the Dirac point by controlling the Sb:Bi composition ratio, but the optimum ratio varies widely across various studies. Moreover, it is unclear how the quasiparticle lifetime is affected by the disorder resulting from Sb/Bi alloying. In this work, we use scanning tunneling microscopy and spectroscopy to study the electronic structure of epitaxially grown (Bi,Sb) 2Te3 thin films at the nanoscale. We study Landau levels (LLs) to determine the effect of disorder on the quasiparticle lifetime as well as the position of the Dirac point with respect to the Fermi energy. A plot of the LL peak widths shows that despite the intrinsic disorder, the quasiparticle lifetime is not significantly degraded. We further determine that the ideal Sb concentration to place the Fermi energy to within a few meV of the Dirac point is x ˜0.7 , but that postannealing temperatures can have a significant effect on the crystallinity and Fermi level position. Specifically, high postgrowth annealing temperature can result in better crystallinity and surface roughness, but also produces a larger Te defect density which adds n -type carriers. Finally, in combination with quasiparticle interference imaging, the dispersion is revealed over a large energy range above the Fermi energy, in a regime inaccessible to ARPES. Interestingly, the surface state dispersion for the x ˜0.7 sample shows great similarity to pristine Bi2Te3 . This work provides microscopic information on the role of disorder and composition in determining carrier concentration, surface state

A Model for Predicting Thermoelectric Properties of Bi2Te3

NASA Technical Reports Server (NTRS)

Lee, Seungwon; VonAllmen, Paul

2009-01-01

A parameterized orthogonal tight-binding mathematical model of the quantum electronic structure of the bismuth telluride molecule has been devised for use in conjunction with a semiclassical transport model in predicting the thermoelectric properties of doped bismuth telluride. This model is expected to be useful in designing and analyzing Bi2Te3 thermoelectric devices, including ones that contain such nano - structures as quantum wells and wires. In addition, the understanding gained in the use of this model can be expected to lead to the development of better models that could be useful for developing other thermoelectric materials and devices having enhanced thermoelectric properties. Bi2Te3 is one of the best bulk thermoelectric materials and is widely used in commercial thermoelectric devices. Most prior theoretical studies of the thermoelectric properties of Bi2Te3 have involved either continuum models or ab-initio models. Continuum models are computationally very efficient, but do not account for atomic-level effects. Ab-initio models are atomistic by definition, but do not scale well in that computation times increase excessively with increasing numbers of atoms. The present tight-binding model bridges the gap between the well-scalable but non-atomistic continuum models and the atomistic but poorly scalable ab-initio models: The present tight-binding model is atomistic, yet also computationally efficient because of the reduced (relative to an ab-initio model) number of basis orbitals and flexible parameterization of the Hamiltonian.

Large cooling differentials and high heat flux capability with p-type Bi2Te3/Sb2Te3 and n-type Bi2Te3/Bi2SexTe3-x Superlattice Thermoelectric Devices

NASA Astrophysics Data System (ADS)

Bulman, Gary; Siivola, Ed; Wiitala, Ryan; Grant, Brian; Pierce, Jonathan; Venkatasubramanian, Rama

2007-03-01

Thin film superlattice (SL) based thermoelectric (TE) devices offer the potential for improved efficiency and high heat flux cooling over conventional bulk materials. Recently, we have demonstrated external cooling of 55K and heat pumping capacity of 128 W/cm^2. These high heat fluxes in thin film devices, while attractive for cooling hot-spots in electronics, also make the device performance sensitive to various thermal resistances in the device structure. We will discuss advances in the cooling performance of Bi2Te3-based SL TE devices and describe a method to extract device material parameters, including thermal resistance, from measurements of their δT-I-V characteristics. These parameters will be compared to values obtained through Hall and Seebeck coefficient measurement on epitaxial materials. Results will be presented for both single couple and multi-couple modules, as well as multi-stage cascaded devices made with these materials. Single stage cooling couples with δTmax of 57.8K (Tc˜242K) and multi-stage modules with δTmax˜92.2K (Tc˜209K) have been measured. G.E. Bulman, E. Siivola, B. Shen and R. Venkatasubramanian, Appl. Phys. Lett. 89, 122117 (2006).

Development of Low-Cost Remote-Control Generators Based on BiTe Thermoelectric Modules

NASA Astrophysics Data System (ADS)

Juanicó, Luis E.; Rinalde, Fabián; Taglialavore, Eduardo; Molina, Marcelo

2013-07-01

This paper presents a new thermogenerator based on moderate-temperature (up to 175°C) BiTe modules available on the open market. Despite this handicap relative to commercial thermogenerators based on high-temperature proprietary-technology PbBi modules (up to 560°C), this new design may become economically competitive due to its innovative thermal sink. Our thermal sink is based on a free-convection water loop built with standard tubing and household hot-water radiators, leading to a more practical, modular design. So, the specific cost of about 55,000 USD/kW obtained for this 120-W prototype is improved to 33,000 USD/kW for a 1-kW unit, which represents about half the price of commercial thermogenerators. Moreover, considering recently launched BiTe modules (that withstand up to 320°C), our proposition could have an even more favorable outlook.

GW study of topological insulators Bi2Se3, Bi2Te3, and Sb2Te3: Beyond the perturbative one-shot approach

NASA Astrophysics Data System (ADS)

Aguilera, Irene; Friedrich, Christoph; Bihlmayer, Gustav; Blügel, Stefan

2013-07-01

We present GW calculations of the topological insulators Bi2Se3, Bi2Te3, and Sb2Te3 within the all-electron full-potential linearized augmented-plane-wave formalism. Quasiparticle effects produce significant qualitative changes in the band structures of these materials when compared to density functional theory (DFT), especially at the Γ point, where band inversion takes place. There, the widely used perturbative one-shot GW approach can produce unphysical band dispersions, as the quasiparticle wave functions are forced to be identical to the noninteracting single-particle states. We show that a treatment beyond the perturbative approach, which incorporates the off-diagonal GW matrix elements and thus enables many-body hybridization to be effective in the quasiparticle wave functions, is crucial in these cases to describe the characteristics of the band inversion around the Γ point in an appropriate way. In addition, this beyond one-shot GW approach allows us to calculate the values of the Z2 topological invariants and compare them with those previously obtained within DFT.

Ambient temperature thermoelectric performance of thermally evaporated p-type Bi-Sb-Te thin films

NASA Astrophysics Data System (ADS)

Singh, Sukhdeep; Singh, Janpreet; Tripathi, S. K.

2018-04-01

Bismuth antimony telluride (BST) compounds have shown a promising performance in low to medium temperature thermoelectric (TE) conversion. One such composition, Bi1.2Sb0.8Te3, was synthesized by melting elemental entities and thin films of the as-synthesized material were deposited by thermal evaporation. X-Ray Diffraction analysis was conducted to study the crystallographic phases and other structural properties. Electrical conductivity and Seebeck coefficient measurements of as-prepared thin films were conducted in the temperature range from 303-363 K with a view to study ambient temperature application of the synthesized material for power generation in which an increasing trend was observed in the Seebeck coefficient. Electrical conductivity displayed a maximum value of 0.22 × 104 Sm-1 that was comparable to other Bi-Sb-Te compositions whereas power factor had its peak at 323 K. These trends observed in electrical properties indicate that synthesized material can be used for room temperature TE module fabrication.

The Aharonov-Bohm oscillation in the BiSbTe3 topological insulator macroflake

NASA Astrophysics Data System (ADS)

Huang, Shiu-Ming; Wang, Pin-Chun; Lin, Chien; You, Sheng-Yu; Lin, Wei-Cheng; Lin, Lin-Jie; Yan, You-Jhih; Yu, Shih-Hsun; Chou, M. C.

2018-05-01

We report the Aharonov-Bohm (AB) oscillation in the BiSbTe3 topological insulator macroflake. The magnetoresistance reveals periodic oscillations. The oscillation index number reveals the Berry phase is π which supports the oscillation originates from the surface state. The AB oscillation frequency increases as temperature decreases, and the corresponding phase coherence length is consistent with that extracted from the weak antilocalization. The phase coherence length is proportional to T-1/2. The magnetoresistance ratio reaches 700% (1000%) at 9 T (14 T) and 2 K, and it is proportional to the carrier mobility. The magnetoresistance ratio is larger than all reported values in (Bi, Sb)2(Te, Se)3 topological insulators.

Quantum Hall effect in dual gated BiSbTeSe2 topological insulator

NASA Astrophysics Data System (ADS)

Chong, Su Kong; Han, Kyu Bum; Nagaoka, Akira; Harmer, Jared; Tsuchikawa, Ryuichi; Sparks, Taylor D.; Deshpande, Vikram V.

The discovery of topological insulators (TIs) has expanded the family of Dirac materials and enables the probing of exotic matter such as Majorana fermions and magnetic monopoles. Different from conventional 2D electron gas, 3D TIs exhibit a gapped insulating bulk and gapless topological surface states as a result of the strong spin-orbit coupling. BiSbTeSe2 is also known to be a 3D TI with a large intrinsic bulk gap of about 0.3 eV and a single Dirac cone surface state. The highly bulk insulating BiSbTeSe2 permits surface dominated conduction, which is an ideal system for the study of quantum Hall effect (QHE). Due to the spin-momentum locking, the Dirac fermions at the topological surface states have a degeneracy of one. In the QH regime, the Hall conductance is quantized to (n + 1 / 2) e2 / h , where n is an integer and the factor of half is related to Berry curvature. In this work, we study the QHE 3D TI using a dual gated BiSbTeSe2 device. By tuning the chemical potentials on top and bottom surfaces, integer QHE with Landau filling factors, ν = 0, +/-1, and +/-2 are observed.

Effect of polarizable lone pair cations on the second-harmonic generation (SHG) properties of noncentrosymmetric (NCS) Bi(2-x)Y(x)TeO₅ (x = 0-0.2).

PubMed

Jo, Hongil; Kim, Yeong Hun; Lee, Dong Woo; Ok, Kang Min

2014-08-14

Y(3+)-doped noncentrosymmetric (NCS) bismuth tellurite materials, Bi(2-x)Y(x)TeO5 (x = 0, 0.1, and 0.2), have been synthesized through standard solid-state reactions and structurally characterized by powder neutron diffraction. The reported NCS materials crystallize in the orthorhombic space group Abm2 (no. 39), and exhibit pseudo-three-dimensional frameworks that are composed of BiO3, BiO5, and TeO3 polyhedra. Detailed diffraction studies show that the cell volume of Bi(2-x)Y(x)TeO5 decreases with an increasing amount of Y(3+)on the Bi(3+) sites. However, no ordering between Bi(3+) and Y(3+) was observed in the Bi(2-x)Y(x)TeO5. Powder second-harmonic generation (SHG) measurements, using 1064 nm radiation, reveal that Bi2TeO5, Bi(1.9)Y(0.1)TeO5, and Bi(1.8)Y(0.2)TeO5 exhibit SHG efficiencies of approximately 300, 200, and 60 times that of α-SiO2, respectively. The reduction in SHG for Y(3+)-doped materials is consistent with the lack of net moment originating from polyhedra with a polarizable Bi(3+) cation.

Kinetic limitation of chemical ordering in Bi2Te3-x Se x layers grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Schreyeck, S.; Brunner, K.; Kirchner, A.; Bass, U.; Grauer, S.; Schumacher, C.; Gould, C.; Karczewski, G.; Geurts, J.; Molenkamp, L. W.

2016-04-01

We study the chemical ordering in Bi2Te3-x Se x grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x  =  0 to 3, and determine their material properties using energy dispersive x-ray spectroscopy, x-ray diffraction and Raman spectroscopy. By fitting the parameters of a kinetic growth model to these results, we obtain a consistent description of growth at a microscopic level. Our main finding is that despite the incorporation of Se in the central layer being much more probable than that of Te, the formation of a fully ordered Te-Bi-Se-Bi-Te layer is prevented by kinetic of the growth process. Indeed, the Se concentration in the central layer of Bi2Te2Se1 reaches a maximum of only  ≈75% even under ideal growth conditions. A second finding of our work is that the intensity ratio of the 0 0 12 and 0 0 6 x-ray reflections serves as an experimentally accessible quantitative measure of the degree of ordering in these films.

Effects of Sb Content (x) on (Bi(1-x)Sb(x))2Te3 Thermoelectric Thin Film Deposited by Effusion Cell Evaporator.

PubMed

Yong, Ho; Na, Sekwon; Gang, Jun-Gu; Jeon, Seong-Jae; Hyun, Seungmin; Lee, Hoo-Jeong

2015-10-01

This paper investigates the effects of the Sb content (x) on (Bi(1-x)Sb(x))2Te3 thermoelectric films with x changing widely from 0 (Sb2Te3) to 1 (Bi2Te3). First, the XRD analysis discloses that with the Sb content (x) increasing, the phase changed gradually from Bi2Te3 to Sb2Te3 as Sb atoms replaced substitutionally Bi atoms. Further microstructure analysis reveals that an extensive grain growth occurred during post-annealing for the samples with high Sb contents. According to the measurement of electrical and thermoelectric properties, the polarity of the charge carrier and Seebeck coefficient switched n-type to p-type in the range of x = 0.45~0.63. For the n-type samples, the power factor is highest when x = 0.18 around 46.01 μW/K(2) whereas Sb2Te3, for the p-type samples, shows the highest value, 62.48 μW/K(2)cm.

Thermoelectric Properties of Bi2Te2Se Compensated by Native Defects and Sn Doping

NASA Astrophysics Data System (ADS)

Fuccillo, M. K.; Jia, Shuang; Charles, M. E.; Cava, R. J.

2013-06-01

In Bi2Te2Se the defect chemistry involves native defects that compete such that they can either exchange dominance or else significantly compensate each other. Here we show how the net carrier concentration, n - p, which depends on the relative amounts of these defects and is readily obtained from Hall data, can be used as a fundamental materials parameter to describe the varied behavior of the thermoelectric properties as a function of compensation. We report the effects of tuning this parameter over multiple orders of magnitude by hole-doping the n-type material Bi2Te2Se0.995, which is already significantly compensated because of its Se deficiency. Crystals with different levels of hole doping were achieved by two separate approaches, namely by selecting pieces from different locations in an undoped crystal in which a systematic carrier concentration gradient had been induced by its growth conditions, and alternatively by doping with Sn for Bi. The thermoelectric power factors for Bi2- x Sn x Te2Se0.995 for x = 0, 0.002, 0.005, 0.010, and 0.040 are reported, and the dependence of the transport properties on the extent of compensation is discussed.

Detection of current induced spin polarization in epitaxial Bi2Te3 thin film

NASA Astrophysics Data System (ADS)

Dey, Rik; Roy, Anupam; Pramanik, Tanmoy; Rai, Amritesh; Heon Shin, Seung; Majumder, Sarmita; Register, Leonard F.; Banerjee, Sanjay K.

2017-03-01

We electrically detect charge current induced spin polarization on the surface of a molecular beam epitaxy grown Bi2Te3 thin film in a two-terminal device with a ferromagnetic MgO/Fe contact and a nonmagnetic Ti/Au contact. The two-point resistance, measured in an applied magnetic field, shows a hysteresis tracking the magnetization of Fe. A theoretical estimate is obtained for the change in resistance on reversing the magnetization direction of Fe from coupled spin-charge transport equations based on the quantum kinetic theory. The order of magnitude and the sign of the hysteresis are consistent with the spin-polarized surface state of Bi2Te3.

Thermoelectric Properties in Fermi Level Tuned Topological Materials (Bi1-xSnx)2Te3

NASA Astrophysics Data System (ADS)

Lin, Chan-Chieh; Shon, Won Hyuk; Rathnam, Lydia; Rhyee, Jong-Soo

2018-03-01

We investigated the thermoelectric properties of Sn-doped (Bi1-xSnx)2Te3 (x = 0, 0.1, 0.3, 0.5, and 0.7%) compounds, which is known as topological insulators. Fermi level tuning by Sn-doping can be justified by the n- to p-type transition with increasing Sn-doping concentration, as confirmed by Seebeck coefficient and Hall coefficient. Near x = 0.3 and 0.5%, the Fermi level resides inside the bulk band gap, resulting in a low Seebeck coefficient and increase of electrical resistivity. The magnetoconductivity with applying magnetic field showed weak antilocalization (WAL) effect for pristine Bi2Te3 while Sn-doped compounds do not follow the WAL behavior of magneto-conductivity, implying that the topological surface Dirac band contribution in magneto-conductivity is suppressed with decreasing the Fermi level by Sn-doping. This research can be applied to the topological composite of p-type/n-type topological materials by Fermi level tuning via Sn-doping in Bi2Te3 compounds.

Pressure evolution of electrical transport in the 3D topological insulator (Bi,Sb)2(Te,Se)3

NASA Astrophysics Data System (ADS)

Jeffries, Jason; Butch, N. P.; Vohra, Y. K.; Weir, S. T.

2014-03-01

The group V-VI compounds--like Bi2Se3, Sb2Te3, or Bi2Te3--have been widely studied in recent years for their bulk topological properties. The high-Z members of this series form with the same crystal structure, and are therefore amenable to isostructural substitution studies. It is possible to tune the Bi-Sb and Te-Se ratios such that the material exhibits insulating behavior, thus providing an excellent platform for understanding how a topological insulator evolves with applied pressure. We report our observations of the pressure-dependent electrical transport and compare that behavior with other binary V-VI compounds under pressure. Lawrence Livermore National Laboratory is operated by Lawrence Livermore National Security, LLC, for the U.S. Department of Energy, National Nuclear Security Administration under Contract DE-AC52-07NA27344.

Quasiparticle band gap in the topological insulator Bi2Te3

NASA Astrophysics Data System (ADS)

Nechaev, I. A.; Chulkov, E. V.

2013-10-01

We present a theoretical study of dispersion of states that form the bulk band-gap edges in the three-dimensional topological insulator Bi2Te3. Within density functional theory, we analyze the effect of atomic positions varied within the error range of the available experimental data and approximation chosen for the exchange-correlation functional on the bulk band gap and k-space location of valence- and conduction-band extrema. For each set of the positions with different exchange-correlation functionals, we show how many-body corrections calculated within a one-shot GW approach affect the mentioned characteristics of electronic structure of Bi2Te3. We thus also illustrate to what degree the one-shot GW results are sensitive to the reference one-particle band structure in the case of bismuth telluride. We found that for this topological insulator the GW corrections enlarge the fundamental band gap and for certain atomic positions and reference band structure bring its value in close agreement with experiment.

Surface Reactivity Enhancement on a Pd/Bi2Te3 Heterostructure through Robust Topological Surface States

PubMed Central

He, Qing Lin; Lai, Ying Hoi; Lu, Yao; Law, Kam Tuen; Sou, Iam Keong

2013-01-01

We present a study of the surface reactivity of a Pd/Bi2Te3 thin film heterostructure. The topological surface states from Bi2Te3, being delocalized and robust owing to their topological natures, were found to act as an effective electron bath that significantly enhances the surface reactivity of palladium in the presence of two oxidizing agents, oxygen and tellurium respectively, which is consistent with a theoretical calculation. The surface reactivity of the adsorbed tellurium on this heterostructure is also intensified possibly benefitted from the effective transfer of the bath electrons. A partially inserted iron ferromagnetic layer at the interface of this heterostructure was found to play two competing roles arising from the higher-lying d-band center of the Pd/Fe bilayer and the interaction between the ferromagnetism and the surface spin texture of Bi2Te3 on the surface reactivity and their characteristics also demonstrate that the electron bath effect is long-lasting against accumulated thickness of adsorbates. PMID:23970163

Synthesis, crystal structure, and properties of KSbO{sub 3}-type Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li Manrong; Retuerto, Maria; Bok Go, Yong

2013-01-15

Single crystals of Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} were prepared from NaCl+KCl flux. This compound adopts KSbO{sub 3}-type crystal structure as evidenced by electron and single crystal X-ray diffraction analysis. The three-dimensional channel structure is formed by corner-sharing octahedral (Mn{sub 0.63}Te{sub 0.37}){sub 2}O{sub 10} dimers and two identical (Bi1){sub 4}(Bi2){sub 2} interpenetrating lattices. The intra-dimer Mn/Te-Mn/Te distances in Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} are short and are consistent with weak metal-metal interactions. The mixed oxidation state of manganese and the edge-sharing octahedral features are confirmed by X-ray near edge absorption spectroscopy measurements, which indicate Bi{sub 3}(Mn{sup III}{sub 1.1}Mn{sup IV}{sub 0.8})Te{supmore » VI}{sub 1.1}O{sub 11} with 57.7% Mn{sup 3+} and 42.3% Mn{sup 4+}. The partial substitution of Te for Mn perturbs long-range magnetic interactions, thereby destroying the ferromagnetic ordering found in Bi{sub 3}Mn{sub 3}O{sub 11} (T{sub C}=150 K). - Graphical abstract: Single crystal of Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} was grown from NaCl+KCl binary flux, suggesting that the high pressure Bi{sub 3}Mn{sub 3}O{sub 11} phase can be stabilized by partial substitution of Mn by Te at ambient pressure. Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} adopts a typical three dimensional KSbO{sub 3}-type crystal structure with three interpenetrating lattices and weak intra-dimmer metal-metal interaction caused by the d electrons of Mn. The edge-shared (Mn{sub 0.63}Te{sub 0.37}){sub 2}O{sub 10} octahedral dimer and mixed oxidation state of manganese (Bi{sub 3}(Mn{sup III}{sub 1.1}Mn{sup IV}{sub 0.8})Te{sup VI}{sub 1.1}O{sub 11} with 57.7% Mn{sup 3+} and 42.3% Mn{sup 4+}) features were evidenced by X-ray absorption near edge spectroscopy. Compared with Bi{sub 3}Mn{sub 3}O{sub 11}, the Te substituted Bi{sub 3}Mn{sub 1.9}Te{sub 1.1}O{sub 11} relaxes the crystal structure, but destroys the long

Anisotropic Effects on the Thermoelectric Properties of Highly Oriented Electrodeposited Bi2Te3 Films

PubMed Central

Manzano, Cristina V.; Abad, Begoña; Muñoz Rojo, Miguel; Koh, Yee Rui; Hodson, Stephen L.; Lopez Martinez, Antonio M.; Xu, Xianfan; Shakouri, Ali; Sands, Timothy D.; Borca-Tasciuc, Theodorian; Martin-Gonzalez, Marisol

2016-01-01

Highly oriented [1 1 0] Bi2Te3 films were obtained by pulsed electrodeposition. The structure, composition, and morphology of these films were characterized. The thermoelectric figure of merit (zT), both parallel and perpendicular to the substrate surface, were determined by measuring the Seebeck coefficient, electrical conductivity, and thermal conductivity in each direction. At 300 K, the in-plane and out-of-plane figure of merits of these Bi2Te3 films were (5.6 ± 1.2)·10−2 and (10.4 ± 2.6)·10−2, respectively. PMID:26776726

Thermoelectric Properties of Cu-Doped n-Type Bi2Te2.85Se0.15 Prepared by Liquid Phase Growth Using a Sliding Boat

NASA Astrophysics Data System (ADS)

Kitagawa, Hiroyuki; Matsuura, Tsukasa; Kato, Toshihito; Kamata, Kin-ya

2015-06-01

N-type Bi2Te2.85Se0.15 thermoelectric materials were prepared by liquid phase growth (LPG) using a sliding boat, a simple and short fabrication process for Bi2Te3-related materials. Cu was selected as a donor dopant, and its effect on thermoelectric properties was investigated. Thick sheets and bars of Cu x Bi2 Te2.85Se0.15 ( x=0-0.25) of 1-2mm in thickness were obtained using the process. X-ray diffraction patterns and scanning electron micrographs showed that the in-plane direction tended to correspond to the hexagonal c-plane, which is the preferred direction for thermoelectric conversion. Cu-doping was effective in controlling conduction type and carrier (electron) concentration. The conduction type was p-type for undoped Bi2Te2.85Se0.15 and became n-type after Cu-doping. The Hall carrier concentration was increased by Cu-doping. Small resistivity was achieved in Cu0.02Bi2Te2.85Se0.15 owing to an optimized amount of Cu-doping and high crystal orientation. As a result, the maximum power factor near 310K for Cu0.02Bi2Te2.85Se0.15 was approximately 4×10-3W/K2m and had good reproducibility. Furthermore, the thermal stability of Cu0.02Bi2Te2.85Se0.15 was also confirmed by thermal cycling measurements of electrical resistivity. Thus, n-type Bi2Te2.85Se0.15 with a large power factor was prepared using the present LPG process.

Interfacial superconductivity in a bi-collinear antiferromagnetically ordered FeTe monolayer on a topological insulator

NASA Astrophysics Data System (ADS)

Manna, S.; Kamlapure, A.; Cornils, L.; Hänke, T.; Hedegaard, E. M. J.; Bremholm, M.; Iversen, B. B.; Hofmann, Ph.; Wiebe, J.; Wiesendanger, R.

2017-01-01

The discovery of high-temperature superconductivity in Fe-based compounds triggered numerous investigations on the interplay between superconductivity and magnetism, and on the enhancement of transition temperatures through interface effects. It is widely believed that the emergence of optimal superconductivity is intimately linked to the suppression of long-range antiferromagnetic (AFM) order, although the exact microscopic picture remains elusive because of the lack of atomically resolved data. Here we present spin-polarized scanning tunnelling spectroscopy of ultrathin FeTe1-xSex (x=0, 0.5) films on bulk topological insulators. Surprisingly, we find an energy gap at the Fermi level, indicating superconducting correlations up to Tc~6 K for one unit cell FeTe grown on Bi2Te3, in contrast to the non-superconducting bulk FeTe. The gap spatially coexists with bi-collinear AFM order. This finding opens perspectives for theoretical studies of competing orders in Fe-based superconductors and for experimental investigations of exotic phases in superconducting layers on topological insulators.

Enhanced thermoelectric performance of Bi2Te3 through uniform dispersion of single wall carbon nanotubes

NASA Astrophysics Data System (ADS)

Ahmad, Kaleem; Wan, Chunlei

2017-10-01

The advancement in nanostructured powder processing has attracted great interest as a cost effective and scalable strategy for high performance thermoelectric bulk materials. However, the level of technical breakthrough realized in quantum dot supperlattices/wires has not yet been demonstrated in these materials. Here, we report the first ever study on the uniform dispersion of single wall carbon nanotubes (SWCNTs) in nanostructured Bi2Te3 bulk, and their effect on thermoelectric parameters above room temperature. The Bi2Te3 based SWCNT composites were prepared through controlled powder processing, and their thermoelectric properties were finely tuned at the nanoscale by regulating various (0.5, 0.75, 1.0 and 1.5) vol% of SWCNTs in the matrix. The flexible ropes of SWCNT, making an interconnected network through the inter/trans granular positions of Bi2Te3, thus substantially change the transport properties of the composites. The perfect one-dimensional (1D) conducting structure of SWCNTs acts as a source of electrical transport through a percolating network, with significantly suppressed lattice thermal conductivity, via intensified boundary scattering. The remarkable increase in power factor is ascribed to energy filtering effects and excellent electrical transport of 1D SWCNTs in the composites. Consequently, with a considerable reduction in thermal conductivity, the figure of merit culminates in a several-fold improvement, at 0.5 vol% of SWCNTs, over pristine bulk Bi2Te3.

Enhanced thermoelectric performance of Bi2Te3 through uniform dispersion of single wall carbon nanotubes.

PubMed

Ahmad, Kaleem; Wan, Chunlei

2017-10-13

The advancement in nanostructured powder processing has attracted great interest as a cost effective and scalable strategy for high performance thermoelectric bulk materials. However, the level of technical breakthrough realized in quantum dot supperlattices/wires has not yet been demonstrated in these materials. Here, we report the first ever study on the uniform dispersion of single wall carbon nanotubes (SWCNTs) in nanostructured Bi 2 Te 3 bulk, and their effect on thermoelectric parameters above room temperature. The Bi 2 Te 3 based SWCNT composites were prepared through controlled powder processing, and their thermoelectric properties were finely tuned at the nanoscale by regulating various (0.5, 0.75, 1.0 and 1.5) vol% of SWCNTs in the matrix. The flexible ropes of SWCNT, making an interconnected network through the inter/trans granular positions of Bi 2 Te 3 , thus substantially change the transport properties of the composites. The perfect one-dimensional (1D) conducting structure of SWCNTs acts as a source of electrical transport through a percolating network, with significantly suppressed lattice thermal conductivity, via intensified boundary scattering. The remarkable increase in power factor is ascribed to energy filtering effects and excellent electrical transport of 1D SWCNTs in the composites. Consequently, with a considerable reduction in thermal conductivity, the figure of merit culminates in a several-fold improvement, at 0.5 vol% of SWCNTs, over pristine bulk Bi 2 Te 3 .

Thin single-crystalline Bi2(Te1-xSex)3 ternary nanosheets synthesized by a solvothermal technique

NASA Astrophysics Data System (ADS)

Guo, Jing; Jian, Jikang; Zhang, Zhihua; Wu, Rong; Li, Jin; Sun, Yanfei

2016-01-01

Bi2(Te1-xSex)3 ternary nanosheets have been successfully synthesized through a facile solvothermal technique using diethylenetriamine as solvent, where x can vary from 0 to 1. X-ray diffraction (XRD) and Scanning electron microscopy (SEM) indicate that the as-synthesized Bi2(Te1-xSex)3 samples are nanosheets with rhombohedral structure, and the thickness of the nanosheets can be as thin as several nanometers. High resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) reveal that the nanosheets are single crystalline with a rhombohedral structure. Energy disperse spectroscopy (EDS) and XRD analysis by Vegard's law confirm that the ternary Bi2(Te1-xSex)3 nanosheets have been obtained here. The growth of the nanosheets is discussed based on an amine-based molecular template mechanism that has been employed to synthesize some other metal chalcogenides.

High Pressure X-Ray Diffraction Studies of Bi2-xSbxTe3 (x = 0,1,2)

NASA Astrophysics Data System (ADS)

Jacobsen, M. K.; Kumar, R. S.; Cornelius, A. L.; Sinogeiken, S. V.; Nico, M. F.

2007-12-01

Recently, pressure tuning of the thermoelectric figure of merit has been reported for several materials Bi2Te3 based thermoelectric materials [2],[10],[12]. In order to investigate the bulk properties of Bi2Te3, Sb2Te3, and their solid solution in detail, we have performed structural studies up to 20 GPa. Our diffraction results show that all three compounds transform from the ambient pressure structure to a high pressure phase between 7 and 10 GPa. In addition, these diffraction results have been converted to Vinet and Holzapfel equations of state to test the claim of electronic topological transitions in these structures [3].

Improved thermoelectric properties of Bi2Te3-xSex alloys by melt spinning and resistance pressing sintering

NASA Astrophysics Data System (ADS)

Cai, Xinzhi; Fan, Xi'an; Rong, Zhenzhou; Yang, Fan; Gan, Zhanghua; Li, Guangqiang

2014-03-01

Starting from bismuth, tellurium and selenium chunks, n-type Bi2Te3-xSex (x ⩽ 0.3) alloys were obtained by melt spinning (MS) combined with a resistance pressing sintering (RPS) process. The phases, microstructures and compositions of the samples were evaluated by x-ray diffraction, field emission scanning electron microscopy, and energy dispersive x-ray spectroscopy during each step in the preparation process, respectively. The influences of Se doping, MS and RPS processes on the thermoelectric (TE) properties of Bi2Te3-xSex alloys were investigated in detail. The Bi2Te3-xSex powders could be well compacted by the RPS process and the relative densities of the bulks prepared by RPS were all higher than 96%. The partially oriented lamellar structure could be observed at some regions of the samples prepared by RPS, and the monolayer thickness of the lamellar structure in the MS-RPS samples was smaller than that in the smelting-RPS sample. The MS process was confirmed as an excellent method to obtain fine microstructures and low lattice thermal conductivity for the TE materials. All evidence about electrical and thermal transport properties suggested that suitably increasing the Se content could effectively improve the ZT value. The maximum ZT value of 0.84 was obtained for the Bi2Te2.7Se0.3 prepared by MS-RPS at 423 K. As opposed to the conventional hot pressing and spark plasma sintering, the RPS method introduced here is more suitable for practical industrial application due to its cost saving and high efficiency.

Enhanced thermoelectric properties in Bi and Te doped p-type Cu3SbSe4 compound

NASA Astrophysics Data System (ADS)

Kumar, Aparabal; Dhama, P.; Banerji, P.

2018-04-01

We report the effect of Bi and Te doping on the electrical transport and thermoelectric properties of Cu3SbSe4 with an aim to maximize the power factor and/or minimize the thermal conductivity. A series of Cu3Sb1-xBixSe4-yTey (x = 0, 0.02, 0.04, 0.06, 0.08; y = 0.01) samples were prepared by melt growth technique and ball milling followed by spark plasma sintering. The structural analysis and microstructures were carried out by X-ray diffraction, transmission electron microscopy and Field emission scanning electron microscopy. Electrical resistivity is found to decrease with increase in doping contents, which is due to increase in carrier concentration and formation of acceptor level inside the energy gap. Reduction in thermal conductivity with increase in Bi content is attributed to scattering of phonons through grain boundaries and mass fluctuation. Maximum figure of merit (ZT ˜ 0.76) was achieved in the Cu3Sb0.98Bi0.02Se3.99Te0.01 sample at 650 K, which is approximately twice of the Cu3SbSe4. The results reveal that the Bi and Te doped Cu3SbSe4 leads to remarkable improvement in its thermoelectric properties.

Ultrahigh sensitivity of anomalous Hall effect sensor based on Cr-doped Bi 2Te 3 topological insulator thin films

DOE PAGES

Ni, Y.; Zhang, Z.; Nlebedim, I. C.; ...

2016-07-01

Anomalous Hall effect (AHE) was recently discovered in magnetic element-doped topological insulators (TIs), which promises low power consumption and high efficiency spintronics and electronics. This discovery broadens the family of Hall sensors. In this paper, AHE sensors based on Cr-doped Bi 2Te 3 topological insulator thin films are studied with two thicknesses (15 and 65 nm). It is found, in both cases, that ultrahigh Hall sensitivity can be obtained in Cr-doped Bi 2Te 3. Hall sensitivity reaches 1666 Ω/T in the sensor with the 15 nm TI thin film, which is higher than that of the conventional semiconductor HE sensor.more » The AHE of 65 nm sensors is even stronger, which causes the sensitivity increasing to 2620 Ω/T. Furthermore, after comparing Cr-doped Bi 2Te 3 with the previously studied Mn-doped Bi 2Te 3 TI Hall sensor, the sensitivity of the present AHE sensor shows about 60 times higher in 65 nm sensors. Furthermore, the implementation of AHE sensors based on a magnetic-doped TI thin film indicates that the TIs are good candidates for ultrasensitive AHE sensors.« less

Enhanced thermoelectric figure-of-merit in Bi-Sb-Te nanocomposites with homogenously dispersed oxide ceramic ZrO2 nanoparticles

NASA Astrophysics Data System (ADS)

Madavali, B.; Kim, H. S.; Lee, K. H.; Hong, S. J.

2017-06-01

In this research, p-type BiSbTe/ZrO2 nanocomposite powders were fabricated by high-energy ball milling. Different weight percentages of ZrO2 (2, 4, and 6 wt. %) nanoparticles were incorporated into the bulk (BiSbTe) matrix by consolidation of as-synthesized nanocomposites (NCs) powder by spark plasma sintering at 673 K. The phase and existence of ZrO2 nano-inclusions was confirmed by X-ray diffraction and transmission electron microscopy-selected area electron diffraction analysis. The Seebeck coefficient of the BiSbTe/ZrO2 NCs was significantly improved (˜36% for 4 wt. % added NCs) by a decrease in the carrier concentration and energy filtering effect, whereas the thermal conductivity was much reduced via strong scattering of carriers/phonons. The peak thermoelectric figure-of-merit (1.34 ± 0.06) was obtained for BiSbTe into which 2 wt. % ZrO2 was dispersed, which was approximately 20% greater than that of the undispersed sample. The hardness of the nanocomposites was significantly improved (˜27%) due to grain-boundary hardening and a dispersion strengthening mechanism.

The Influence of Sintering Temperature on the Microstructure and Thermoelectric Properties of n-Type Bi2Te3- x Se x Nanomaterials

NASA Astrophysics Data System (ADS)

Du, Y.; Cai, K. F.; Li, H.; An, B. J.

2011-05-01

Pure Bi2Te3 and Bi2Se3 nanopowders were hydrothermally synthesized, and n-type Bi2Te3- x Se x bulk samples were prepared by hot pressing a mixture of Bi2Te3 and Bi2Se3 nanopowders at 623 K, 648 K or 673 K and 80 MPa in vacuum. The phase composition of the powders and bulk samples were characterized by x-ray diffraction. The morphology of the powders was examined by transmission electron microscopy. The microstructure and composition of the bulk samples were characterized by field-emission scanning electron microscopy and energy-dispersive x-ray spectroscopy, respectively. The density of the samples increased with sintering temperature. The samples were somewhat oxidized, and the amount of oxide (Bi2TeO5) present increased with sintering temperature. The samples consisted of sheet-like grains with a thickness less than 100 nm. Seebeck coefficient, electrical conductivity, and thermal conductivity of the samples were measured from room temperature up to 573 K. Throughout the temperature range investigated, the sample sintered at 623 K had a higher power factor than the samples sintered at 648 K or 673 K.

High-pressure studies on electronic transport properties of Te-substituted Bi2Se3–xTex topological insulators

NASA Astrophysics Data System (ADS)

Devidas, T. R.; Abhirami, S.; Sharma, Shilpam; Amaladas, E. P.; Mani, Awadhesh

2018-03-01

Studies on the electrical transport properties of the 3D topological insulators Bi2Se3 under iso-electronic substitution of Te at Se sites and the application of external pressure have been performed to understand the evolution of its ground-state properties and to explore possible electronic phase transitions in Bi2Se3‑x Te x (x=0\\text{--}3 ) systems. While the external pressure suppresses the metallic behaviour of Bi2Se3 arising from defect charge carriers leading ultimately to non-metal behaviour, the effect of pressure on Te-doped samples x=1\\text{--}2 seems to be more striking, and causes multiple electronic phase transitions such as an insulator-to-metal transition (MIT) followed by pressure-induced superconducting transition at higher pressures. All the critical parameters such as critical pressure for the occurrence of MIT (PMIT}) , superconductivity (PSC}) and maximum pressure induced superconducting transition temperature (Tc,max}) for given compositions are seen to exhibit maxima at x=1.6 which is the composition that exhibits the most insulating behaviour with least concentration of defect charge carriers among the samples of Bi2Se3‑x Te x (x=0\\text{--}3 ) series. The superconducting transition temperature (Tc}) decreases with increasing pressure in x=1\\text{--}2 samples, while it remains nearly constant for Bi2Te3. Based on the analysis of the experimental data it is surmised that the pressure-induced superconductivity seen in these systems is of conventional (BCS) type.

Experimental determination of the bulk Rashba parameters in BiTeBr

NASA Astrophysics Data System (ADS)

Martin, C.; Suslov, A. V.; Buvaev, S.; Hebard, A. F.; Bugnon, P.; Berger, H.; Magrez, A.; Tanner, D. B.

2016-12-01

Shubnikov-de Haas (SdH) oscillations, Hall effect, and optical reflectance (R(ω)) measurements have been performed on single crystals of BiTeBr. Under magnetic fields up to 32 tesla and at temperatures as low as 0.4 K, the SdH data shows a single oscillation frequency F = 102 +/- 5 \\text{tesla} . The combined transport and optical studies establish that the SdH effect originates from the Rashba spin-split bulk conduction band, with the chemical potential situated about 13 meV below the crossing (Dirac) point. The bulk carrier concentration was ne≈5×1018 \\text{cm}-3 and the effective mass m1*= 0.16m0 . Combining SdH and optical data, we reliably determine the Rashba parameters for the bulk conduction band of BiTeBr: the Rashba energy ER = 28 \\text{meV} and the momentum spin-split kR = 0.033 \\unicode{8491}-1 . Hence, the bulk Rashba coupling strength αR = 2ER/kR is found to be 1.7 eVÅ.

Study of Diffusion Barrier for Solder/ n-Type Bi2Te3 and Bonding Strength for p- and n-Type Thermoelectric Modules

NASA Astrophysics Data System (ADS)

Lin, Wen-Chih; Li, Ying-Sih; Wu, Albert T.

2018-01-01

This paper investigates the interfacial reaction between Sn and Sn3Ag0.5Cu (SAC305) solder on n-type Bi2Te3 thermoelectric material. An electroless Ni-P layer successfully suppressed the formation of porous SnTe intermetallic compound at the interface. The formation of the layers between Bi2Te3 and Ni-P indicates that Te is the dominant diffusing species. Shear tests were conducted on both Sn and SAC305 solder on n- and p-type Bi2Te3 with and without a Ni-P barrier layer. Without a Ni-P layer, porous SnTe would result in a more brittle fracture. A comparison of joint strength for n- and p-type thermoelectric modules is evaluated by the shear test. Adding a diffusion barrier increases the mechanical strength by 19.4% in n-type and 74.0% in p-type thermoelectric modules.

Design and Fabrication of Multifunctional Portable Bi2Te3-Based Thermoelectric Camping Lamp

NASA Astrophysics Data System (ADS)

Zhou, Yi; Li, Gongping

2018-05-01

Camping lamps have been widely used in the lighting, power supply, and intelligent electronic equipment fields. However, applications of traditional chemical and solar camping lamps are largely limited by the physical size of the source and operating conditions. A new prototype multifunctional portable Bi2Te3-based thermoelectric camping lamp (TECL) has been designed and fabricated. Ten parallel light-emitting diodes were lit directly by a Bi2Te3-based thermoelectric generator (TEG). The highest short-circuit current of 0.38 A and open-circuit voltage of 4.2 V were obtained at temperature difference of 115 K. This TECL is attractive for use in multifunctional and extreme applications as it integrates a portable heat source, high-performance TEG, and power management unit.

Design and Fabrication of Multifunctional Portable Bi2Te3-Based Thermoelectric Camping Lamp

NASA Astrophysics Data System (ADS)

Zhou, Yi; Li, Gongping

2018-07-01

Camping lamps have been widely used in the lighting, power supply, and intelligent electronic equipment fields. However, applications of traditional chemical and solar camping lamps are largely limited by the physical size of the source and operating conditions. A new prototype multifunctional portable Bi2Te3-based thermoelectric camping lamp (TECL) has been designed and fabricated. Ten parallel light-emitting diodes were lit directly by a Bi2Te3-based thermoelectric generator (TEG). The highest short-circuit current of 0.38 A and open-circuit voltage of 4.2 V were obtained at temperature difference of 115 K. This TECL is attractive for use in multifunctional and extreme applications as it integrates a portable heat source, high-performance TEG, and power management unit.

Improved mechanical properties of thermoelectric (Bi 0.2Sb 0.8) 2Te 3 by nanostructuring

DOE PAGES

Lavrentev, M. G.; Osvenskii, V. B.; Parkhomenko, Yu. N.; ...

2016-06-01

Temperature-dependent strength of Bi-Sb-Te under uniaxial compression is investigated. Bi-Sb-Te samples were produced by three methods: vertical zone-melting, hot extrusion, and spark plasma sintering (SPS). For zone-melted and extruded samples, the brittle-ductile transition occurs over a temperature range of 200-350 °C. In nanostructured samples produced via SPS, the transition is observed in a narrower temperature range of 170-200 °C. At room temperature, the strength of the nanostructured samples is higher than that of zone-melted and extruded samples, but above 300 °C, all samples decrease to roughly the same strength.

Improved mechanical properties of thermoelectric (Bi 0.2Sb 0.8) 2Te 3 by nanostructuring

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lavrentev, M. G.; Osvenskii, V. B.; Parkhomenko, Yu. N.

Temperature-dependent strength of Bi-Sb-Te under uniaxial compression is investigated. Bi-Sb-Te samples were produced by three methods: vertical zone-melting, hot extrusion, and spark plasma sintering (SPS). For zone-melted and extruded samples, the brittle-ductile transition occurs over a temperature range of 200-350 °C. In nanostructured samples produced via SPS, the transition is observed in a narrower temperature range of 170-200 °C. At room temperature, the strength of the nanostructured samples is higher than that of zone-melted and extruded samples, but above 300 °C, all samples decrease to roughly the same strength.

Study of optical nonlinearities in Se-Te-Bi thin films

NASA Astrophysics Data System (ADS)

Sharma, Ambika; Yadav, Preeti; Kumari, Anshu

2014-04-01

The present work reports the nonlinear refractive index of Se85-xTe15Bix thin films calculated by Ticha and Tichy relation. The nonlinear refractive index of Chalcogenide amorphous semiconductor is well correlated with the linear refractive index and WDD parameters which in turn depend on the density and molar volume of the system. The density of the system is calculated theoretical as well as experimentally by using Archimedes principle. The linear refractive index and WDD parameters are calculated using single transmission spectra in the spectral range of 400-1500 nm. It is observed that linear as well as nonlinear refractive index increases with Bi content. The results are analyzed on the basis of increasing polarizability due to larger radii of Bi.

Synthesis, structure, and characterization of two new bismuth(III) selenite/tellurite nitrates: [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO{sub 3})](NO{sub 3})

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meng, Chang-Yu; Wei, Ming-Fang; Geng, Lei, E-mail: lgeng.cn@gmail.com

Two new bismuth(III) selenite/tellurite nitrates, [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO{sub 3})](NO{sub 3}), have been synthesized by conventional facile hydrothermal method at middle temperature 200 °C and characterized by single-crystal X-ray diffraction, powder diffraction, UV–vis–NIR optical absorption spectrum, infrared spectrum and thermal analylsis. Both [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO3)](NO3) crystallize in the monoclinic centronsymmetric space group P2{sub 1}/c with a=9.9403(4) Å, b=9.6857(4) Å, c=10.6864(5) Å, β=93.1150(10)° for [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and a=8.1489(3) Å, b=9.0663(4) Å, c=7.4729(3) Å, β=114.899(2)° for Bi(TeO3)(NO3), respectively. The two compounds, whose structures are composed of three different asymmetricmore » building units, exhibit two different types of structures. The structure of [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) features a three-dimensional (3D) bismuth(III) selenite cationic tunnel structure [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}] {sup 3}{sub ∞} with NO{sub 3}{sup −} anion group filling in the 1D tunnel along b axis. The structure of [Bi(TeO{sub 3})](NO{sub 3}) features 2D bismuth(III) tellurite [Bi(TeO{sub 3}){sub 2}]{sup 2}{sub ∞} layers separated by NO{sub 3}{sup −} anion groups. The results of optical diffuse-reflectance spectrum measurements and electronic structure calculations based on density functional theory methods show that the two compounds are wide band-gap semiconductors. - Graphical abstract: Two novel bismuth{sup III} selenite/tellurite nitrates [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) with 3D tunnel structure and [Bi(TeO{sub 3})](NO{sub 3}) with 2D layer structure have been firstly synthesized and characterized. Display Omitted - Highlights: • Two novel bismuth{sup III} nitrates [(Bi{sub 3}O{sub 2})(SeO{sub 3}){sub 2}](NO{sub 3}) and [Bi(TeO{sub 3})](NO{sub 3}) were

Thermoelectric Properties Studies on n-type Bi2Te3-xSex

NASA Astrophysics Data System (ADS)

Yang, Jian; Yan, Xiao; Ma, Yi; Poudel, Bed; Lan, Yucheng; Wang, D. Z.; Ren, Z. F.; Hao, Q.; Chen, G.

2008-03-01

Bi2Te3-xSex is a classic room temperature n-type thermoelectric material. In spite of the long history of research, its ZT is still below 1. By directly making nano sized particles using mechanical alloy from element, then pressing the nanoparticles into 100% dense bulk sample with nano-structures by hot press, we expect to decrease the thermal conductivity by the increased grain boundary scattering of phonons so to improve the ZT above 1. The ratio of Te/Se was varied systematically to investigate its effect on thermal conductivity.

Influence of Sn on the thermoelectric properties of (Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulbachinskii, V.A., E-mail: kulb@mig.phys.msu.ru; Kytin, V.G.; Kudryashov, A.A.

2012-09-15

The influence of tin on the thermoelectric properties of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals (x=0; 0.25; 0.5) has been investigated. The temperature dependence of the Seebeck coefficient S, the electrical conductivity {sigma}, the heat conductivity k and the thermoelectric figure of merit of p-(Bi{sub x}Sb{sub 1-x}){sub 2}Te{sub 3} single crystals were measured in the temperature range 7-300 K. By an increase the Sn content, the hole concentration increases in p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3}. The heat conductivity k of the p-(Bi{sub x}Sb{sub 1-x}){sub 2-y}Sn{sub y}Te{sub 3} crystals decreases due to the Sn doping, while the electrical conductivitymore » {sigma} increases in the temperature interval about 200« less

Structural, thermal, optical, and photoacoustic study of nanocrystalline Bi{sub 2}Te{sub 3} produced by mechanical alloying

DOE Office of Scientific and Technical Information (OSTI.GOV)

Souza, S. M.; Triches, D. M.; Poffo, C. M.

2011-01-01

Nanocrystalline Bi{sub 2}Te{sub 3} was produced by mechanical alloying and its properties were investigated by differential scanning calorimetry (DSC) x-ray diffraction (XRD), Raman spectroscopy (RS), and photoacoustic spectroscopy (PAS). Combining the XRD and RS results, the volume fraction of the interfacial component in as-milled and annealed samples was estimated. The PAS results suggest that the contribution of the interfacial component to the thermal diffusivity of nanostructured Bi{sub 2}Te{sub 3} is very significant.

Magnetotransport study of (Sb 1-xBi x) 2Te 3 thin films on mica substrate for ideal topological insulator

DOE PAGES

Ni, Yan; Zhang, Zhen; Nlebedim, Cajetan I.; ...

2016-02-29

In this study, we deposited high quality (Sb 1–xBi x) 2Te 3 on mica substrate by molecular beam epitaxy and investigated their magnetotransport properties. It is found that the average surface roughness of thin films is lower than 2 nm. Moreover, a local maxima on the sheet resistance is obtained with x = 0.043, indicating a minimization of bulk conductivity at this composition. For (Sb 0.957Bi 0.043) 2Te 3, weak antilocalization with coefficient of -0.43 is observed, confirming the existence of 2D surface states. Moreover Shubnikov-de Hass oscillation behavior occurs under high magnetic field. The 2D carrier density is thenmore » determined as 0.81 × 10 16 m –2, which is lower than that of most TIs reported previously, indicating that (Sb 0.957Bi 0.043) 2Te 3 is close to ideal TI composition of which the Dirac point and Fermi surface cross within the bulk bandgap. Our results thus demonstrate the best estimated composition for ideal TI is close to (Sb 0.957Bi 0.043) 2Te 3 and will be helpful for designing TI-based devices.« less

Effect of Te substitution on crystal structure and transport properties of AgBiSe2 thermoelectric material.

PubMed

Goto, Y; Nishida, A; Nishiate, H; Murata, M; Lee, C H; Miura, A; Moriyoshi, C; Kuroiwa, Y; Mizuguchi, Y

2018-02-20

Silver bismuth diselenide (AgBiSe 2 ) has attracted much attention as an efficient thermoelectric material, owing to its intrinsically low lattice thermal conductivity. While samples synthesized using a solid-state reaction showed n-type conductivity and their dimensionless figure of merit (ZT) reached ∼1 by electron doping, theoretical calculations predicted that a remarkably high thermoelectric performance can be achieved in p-type AgBiSe 2 . In this paper, we present the effect of Te substitution on the crystal structure and thermoelectric properties of AgBiSe 2 , expecting p-type conductivity due to the shallowing of the energy potential of the valence band. We found that all AgBiSe 2-x Te x (x = 0-0.8) prepared using a solid-state reaction exhibits n-type conductivity from 300 to 750 K. The room-temperature lattice thermal conductivity decreased to as low as 0.3 W m -1 K -1 by Te substitution, which was qualitatively described using the point defect scattering model for the solid solution. We show that ZT reaches ∼0.6 for x = 0.8 at a broad range of temperatures, from 550 to 750 K, due to the increased power factor, although the carrier concentration has not been optimized yet.

Enhanced stability of Bi-doped Ge2Sb2Te5 amorphous films

NASA Astrophysics Data System (ADS)

Dyussembayev, S.; Prikhodko, O.; Tsendin, K.; Timoshenkov, S.; Korobova, N.

2014-09-01

Although, several reviews have appeared on various physical properties and applications of chalcogenide glasses, there is no thorough study of local atomic structure and its modification for eutectic Ge-Sb-Te alloys doped with Bi. Ge2Sb2Te5 pure and Bi-doped films were deposited by ion-plasma sputtering method of synthesized GTS material on Si (100) and glass substrates coated with a conductive Al layer which was used as a bottom electrode. Current-voltage characteristics of different points of the same samples have been measured. Random distribution of inclusions within the sample made it possible to investigate the dependence of switching and memory effects on the phase composition at a constant value of other parameters. Measurements in the current controlled mode clearly showed that the memory state formation voltage does not depend on current in a wide range. Results indicate that the development of imaging technologies phase memory cells need to pay special attention to the conditions of Ge-Sb-Te film preparation. To increase the number of cycles "write - erase" should be additional prolonged annealing of the synthesized films.

Controllable Electrical Contact Resistance between Cu and Oriented-Bi2Te3 Film via Interface Tuning.

PubMed

Kong, Xixia; Zhu, Wei; Cao, Lili; Peng, Yuncheng; Shen, Shengfei; Deng, Yuan

2017-08-02

The contact resistance between metals and semiconductors has become critical for the design of thin-film thermoelectric devices with their continuous miniaturization. Herein, we report a novel interface tuning method to regulate the contact resistance at the Bi 2 Te 3 -Cu interface, and three Bi 2 Te 3 films with different oriented microstructures are obtained. The lowest contact resistivity (∼10 -7 Ω cm 2 ) is observed between highly (00l) oriented Bi 2 Te 3 and Cu film, nearly an order of magnitude lower than other orientations. This significant decrease of contact resistivity is attributed to the denser film connections, lower lattice misfit, larger effective conducting contact area, and smaller width of the surface depletion region. Meanwhile, our results show that the reduction of contact resistance has little dependence on the interfacial diffusion based on the little change in contact resistivity after the introduction of an effective Ti barrier layer. Our work provides a new idea for the mitigation of contact resistivity in thin-film thermoelectric devices and also gives certain guidance for the size design of the next-level miniaturized devices.

Thickness dependent quantum oscillations of transport properties in topological insulator Bi2Te3 thin films

NASA Astrophysics Data System (ADS)

Rogacheva, E. I.; Budnik, A. V.; Sipatov, A. Yu.; Nashchekina, O. N.; Dresselhaus, M. S.

2015-02-01

The dependences of the electrical conductivity, the Hall coefficient, and the Seebeck coefficient on the layer thickness d (d = 18-600 nm) of p-type topological insulator Bi2Te3 thin films grown by thermal evaporation in vacuum on glass substrates were obtained at room temperature. In the thickness range of d = 18-100 nm, sustained oscillations with a substantial amplitude were revealed. The observed oscillations are well approximated by a harmonic function with a period Δd = (9.5 ± 0.5) nm. At d > 100 nm, the transport coefficients practically do not change as d is increased. The oscillations of the kinetic properties are attributed to the quantum size effects due to the hole confinement in the Bi2Te3 quantum wells. The results of the theoretical calculations of Δd within the framework of a model of an infinitely deep potential well are in good agreement with the experimental results. It is suggested that the substantial amplitude of the oscillations and their sustained character as a function of d are connected with the topologically protected gapless surface states of Bi2Te3 and are inherent to topological insulators.

Impact of stoichiometry and disorder on the electronic structure of the PbBi2Te4 -xSex topological insulator

NASA Astrophysics Data System (ADS)

Shvets, I. A.; Klimovskikh, I. I.; Aliev, Z. S.; Babanly, M. B.; Sánchez-Barriga, J.; Krivenkov, M.; Shikin, A. M.; Chulkov, E. V.

2017-12-01

Detailed comparative theoretical and experimental study of electronic properties and spin structure was carried out for a series of Pb-based quaternary compounds PbBi2Te4 -xSex . For all values of x , these compounds are theoretically predicted to be topological insulators, possessing at high Se content a remarkably large band gap and a Dirac point isolated from bulk states. Using spin- and angle-resolved photoemission spectroscopy, it was shown that the PbBi2Te2Se2 and PbBi2Te1.4Se2.6 compounds are characterized by well-defined spin-polarized topological surface state in the bulk gap. To define the probable distribution of atoms over the atomic sites for these samples, we performed ab initio calculations in ordered and disordered configurations of the unit cell. We found that theoretical calculations better reproduce photoemission data when Te atoms are placed in the outermost layers of the septuple layer block.

Structural and Galvanomagnetic properties in Mn-Bi2Te3 thin films

NASA Astrophysics Data System (ADS)

Bidinakis, K.; Speliotis, Th.

2017-12-01

Bismuth-based binary chalcogenide compounds such as Bi2Te3 and Bi2Se3 are well known materials for their excellent thermoelectric properties due to their near-gap electronic structure. In the last few years these materials have received attention for exhibiting new physics of 3D topological insulators (TI). Possible applications of TI based devices range from quantum computing, spin based logic and memory to electrodynamics. The 3D TIs present spin-momentum-locked surface states by time reversal symmetry (TRS). Introducing magnetic doping in a TI, brakes the TRS and is predicted to open the gap at Dirac point, resulting in exotic quantum phenomena. This interaction between magnetism and topologically protected states is of potential attention for applications in modern spintronics. Quantum phenomena such as weak antilocalization observed in these nanostructures are described. In this work, granular Mn-Bi2Te3 thin films were grown by DC magnetron sputtering on Si(111) substrates and were submitted to ex situ annealing. We present results for the crystal structure of sputtered and annealed films characterized with X-ray diffraction and high-resolution scanning electron microscopy (HRSEM). The surface analysis was studied with atomic force microscopy (AFM). Magnetotransport measurements were performed using standard four probe technique with Hall and MR configurations, with perpendicular magnetic fields up to 9T and temperatures from 300 to 3K.

Enhanced photocatalytic activity of Te-doped Bi2MoO6 under visible light irradiation: Effective separation of photogenerated carriers resulted from inhomogeneous lattice distortion and improved electron capturing ability

NASA Astrophysics Data System (ADS)

Chen, Shuguang; Li, Yuhan; Wu, Zixu; Wu, Baoxin; Li, Haibin; Li, Fujin

2017-05-01

Te-doped Bi2MoO6 photocatalyst was hydrothermally synthesized, and nonmetal atoms Te were homogeneously incorporated into Bi2MoO6 lattice with the substitution of Te4+ to Mo6+. With increasing Te-doping concentration in Bi2MoO6, no detectable band-gap narrowing but more and more severe inhomogeneous lattice distortions were determined. The activity of Bi2MoO6 photocatalyst was evaluated through methylene blue degradation under visible light irradiation (λ>410 nm) and was greatly enhanced by Te-doping. When Te-doped Bi2MoO6 was synthesized at Te/Mo molar ratio of 7.5%, a maximum first-order rate constant of methylene blue degradation was obtained. The inhomogeneous lattice distortion generated an internal dipole moment, and the holes generated with the substitution of Te4+ to Mo6+ acted as the capturing centers of photogenerated electrons, thus the effective separation of photogenerated carriers was facilitated to result in a relatively high concentration of holes on the surface of Te-doped Bi2MoO6 to be favorable for the efficient methylene blue degradation.

Ion beam irradiation effect on thermoelectric properties of Bi2Te3 and Sb2Te3 thin films

NASA Astrophysics Data System (ADS)

Fu, Gaosheng; Zuo, Lei; Lian, Jie; Wang, Yongqiang; Chen, Jie; Longtin, Jon; Xiao, Zhigang

2015-09-01

Thermoelectric energy harvesting is a very promising application in nuclear power plants for self-maintained wireless sensors. However, the effects of intensive radiation on the performance of thermoelectric materials under relevant reactor environments such as energetic neutrons are not fully understood. In this work, radiation effects of bismuth telluride (Bi2Te3) and antimony telluride (Sb2Te3) thermoelectric thin film samples prepared by E-beam evaporation are investigated using Ne2+ ion irradiations at different fluences of 5 × 1014, 1015, 5 × 1015 and 1016 ions/cm2 with the focus on the transport and structural properties. Electrical conductivities, Seebeck coefficients and power factors are characterized as ion fluence changes. X-ray diffraction (XRD) and transmission electron microscopy (TEM) of the samples are obtained to assess how phase and microstructure influence the transport properties. Carrier concentration and Hall mobility are obtained from Hall effect measurements, which provide further insight into the electrical conductivity and Seebeck coefficient mechanisms. Positive effects of ion irradiations from Ne2+ on thermoelectric material property are observed to increase the power factor to 208% for Bi2Te3 and 337% for Sb2Te3 materials between fluence of 1 and 5 × 1015 cm2, due to the increasing of the electrical conductivity as a result of ionization radiation-enhanced crystallinity. However, under a higher fluence, 5 × 1015 cm2 in this case, the power factor starts to decrease accordingly, limiting the enhancements of thermoelectric materials properties under intensive radiation environment.

Enhanced photocatalytic activity of Te-doped Bi{sub 2}MoO{sub 6} under visible light irradiation: Effective separation of photogenerated carriers resulted from inhomogeneous lattice distortion and improved electron capturing ability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Shuguang, E-mail: csustcsg@yahoo.com; Li, Yuhan; Wu, Zixu

Te-doped Bi{sub 2}MoO{sub 6} photocatalyst was hydrothermally synthesized, and nonmetal atoms Te were homogeneously incorporated into Bi{sub 2}MoO{sub 6} lattice with the substitution of Te{sup 4+} to Mo{sup 6+}. With increasing Te-doping concentration in Bi{sub 2}MoO{sub 6}, no detectable band-gap narrowing but more and more severe inhomogeneous lattice distortions were determined. The activity of Bi{sub 2}MoO{sub 6} photocatalyst was evaluated through methylene blue degradation under visible light irradiation (λ>410 nm) and was greatly enhanced by Te-doping. When Te-doped Bi{sub 2}MoO{sub 6} was synthesized at Te/Mo molar ratio of 7.5%, a maximum first-order rate constant of methylene blue degradation was obtained.more » The inhomogeneous lattice distortion generated an internal dipole moment, and the holes generated with the substitution of Te{sup 4+} to Mo{sup 6+} acted as the capturing centers of photogenerated electrons, thus the effective separation of photogenerated carriers was facilitated to result in a relatively high concentration of holes on the surface of Te-doped Bi{sub 2}MoO{sub 6} to be favorable for the efficient methylene blue degradation. - Graphical abstract: With the substitution of Te{sup 4+} to Mo{sup 6+}, effective separation of photogenerated carriers resulted from inhomogeneous lattice distortion and improved electron capturing ability is achieved to be responsible for enhanced photocatalytic activity of Te-doped Bi{sub 2}MoO{sub 6}. - Highlights: • Nonmetal Te is incorporated into Bi{sub 2}MoO{sub 6} with the substitution of Te{sup 4+} to Mo{sup 6+}. • Revealing inhomogeneous lattice distortion and improved electron capturing ability. • Effective separation of photogenerated carriers in Te-doped Bi{sub 2}MoO{sub 6} is achieved. • The mechanism of methylene blue degradation over Te-doped Bi{sub 2}MoO{sub 6} is proposed.« less

Thermal Stability of Zone Melting p-Type (Bi, Sb)2Te3 Ingots and Comparison with the Corresponding Powder Metallurgy Samples

NASA Astrophysics Data System (ADS)

Jiang, Chengpeng; Fan, Xi'an; Hu, Jie; Feng, Bo; Xiang, Qiusheng; Li, Guangqiang; Li, Yawei; He, Zhu

2018-04-01

During the past few decades, Bi2Te3-based alloys have been investigated extensively because of their promising application in the area of low temperature waste heat thermoelectric power generation. However, their thermal stability must be evaluated to explore the appropriate service temperature. In this work, the thermal stability of zone melting p-type (Bi, Sb)2Te3-based ingots was investigated under different annealing treatment conditions. The effect of service temperature on the thermoelectric properties and hardness of the samples was also discussed in detail. The results showed that the grain size, density, dimension size and mass remained nearly unchanged when the service temperature was below 523 K, which suggested that the geometry size of zone melting p-type (Bi, Sb)2Te3-based materials was stable below 523 K. The power factor and Vickers hardness of the ingots also changed little and maintained good thermal stability. Unfortunately, the thermal conductivity increased with increasing annealing temperature, which resulted in an obvious decrease of the zT value. In addition, the thermal stabilities of the zone melting p-type (Bi, Sb)2Te3-based materials and the corresponding powder metallurgy samples were also compared. All evidence implied that the thermal stabilities of the zone-melted (ZMed) p-type (Bi, Sb)2Te3 ingots in terms of crystal structure, geometry size, power factor (PF) and hardness were better than those of the corresponding powder metallurgy samples. However, their thermal stabilities in terms of zT values were similar under different annealing temperatures.

Thermoelectric properties of Co₄Sb₁₂ with Bi₂Te₃ nanoinclusions.

PubMed

Ghosh, Sanyukta; Bisht, Anuj; Karati, Anirudha; Rogl, Gerda; Rogl, Peter F; Murty, B S; Suwas, Satyam; Mallik, Ramesh Chandra

2018-01-08

The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi2Te3) nanoinclusions in Co4Sb12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K. In the current study, Bi2Te3 nanoparticles were dispersed into bulk Co4Sb12 by ball-milling. The bulk was fabricated by spark plasma sintering (SPS). The presence of Bi2Te3 dispersion in Co4Sb12 was confirmed by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and electron back scattered diffraction (EBSD) technique. Energy dispersive spectroscopy (EDS) showed antimony (Sb) as an impurity phase for higher contents of Bi2Te3 in the sample. The Seebeck coefficient (S) and electrical conductivity () were measured in the temperature range of 350 - 673 K. The negative value of S indicates that most of the charge carriers were electrons. A decrease in S and increase in with Bi2Te3 content are due to the increased carrier concentration, as confirmed by Hall measurement. The thermal conductivity, measured between 423 - 673 K, decreased due to the increased phonon scattering at interfaces. A maximum zT of 0.17 was achieved at 523 K and it did not vary much throughout the temperature range. The experimental results of composites were compared by using effective medium theories. © 2018 IOP Publishing Ltd.

High rate dry etching of (BiSb)2Te3 film by CH4/H2-based plasma

NASA Astrophysics Data System (ADS)

Song, Junqiang; Shi, Xun; Chen, Lidong

2014-10-01

Etching characteristics of p-type (BiSb)2Te3 films were studied with CH4/H2/Ar gas mixture using an inductively coupled plasma (ICP)-reactive ion etching (RIE) system. The effects of gas mixing ratio, working pressure and gas flow rate on the etch rate and the surface morphology were investigated. The vertical etched profile with the etch rate of 600 nm/min was achieved at the optimized processing parameters. X-ray photoelectron spectroscopy (XPS) analysis revealed the non-uniform etching of (BiSb)2Te3 films due to disparate volatility of the etching products. Micro-masking effects caused by polymer deposition and Bi-rich residues resulted in roughly etched surfaces. Smooth surfaces can be obtained by optimizing the CH4/H2/Ar mixing ratio.

Preparation and Thermoelectric Properties of Graphite/Bi0.5Sb1.5Te3 Composites

NASA Astrophysics Data System (ADS)

Hu, Wenhua; Zhou, Hongyu; Mu, Xin; He, Danqi; Ji, Pengxia; Hou, Weikang; Wei, Ping; Zhu, Wanting; Nie, Xiaolei; Zhao, Wenyu

2018-06-01

Bismuth telluride zone-melting alloys are the most commercially used thermoelectric materials. However, the zone-melting ingots have weak machinability due to the strong preferred orientation. Here, non-textured graphite/Bi0.5Sb1.5Te3 (G/BST) composites were prepared by a powder metallurgy method combined with cold-pressing and annealing treatments. The composition, microstructure, and thermoelectric properties of the G/BST composites with different mass percentages of G were investigated. It was found that G addition could effectively reduce the thermal conductivity and slightly improve the electrical properties of the BST, which resulted in a large enhancement in the figure-of-merit, ZT. The largest ZT for the xG/BST composites with x = 0.05% reached 1.05 at 320 K, which is increased by 35% as compared with that of the G-free BST materials. This work provided an effective method for preparing non-textured Bi2Te3-based TE materials with a simple process, low cost, and large potential in scale production.

Large superconducting double-gap, a pronounced pseudogap and evidence for proximity-induced topological superconductivity in the Bi2Te3/Fe1+yTe interfacial superconductor

NASA Astrophysics Data System (ADS)

Shen, J. Y.; He, M. Q.; He, Q. L.; Law, K. T.; Sou, I. K.; Lortz, R.; Petrovic, A. P.

We investigate directional point-contact spectroscopy on a Bi2Te3/ Fe1+yTe heterostructure, fabricated via van der Waals epitaxy, which is interfacial superconducting with an onset TC at 12K and zero resistance below 8K. A large superconducting twin-gap structure is seen down to 0.27K, together with a zero bias conductance peak. The anisotropic smaller gap (Δ1) is around 5 meV at 0.27K and closes at 8K, while the other one (Δ2), as large as 12 meV, is isotropic and eventually evolves into a pseudogap closing at 40K. Both, the two-gap BTK and Dynes models can well reproduce our data, demonstrating Δ1 should be associated with the proximity-induced superconductivity in the topological Bi2Te3 layer, while Δ2 may be attributed to an intrinsically-doped FeTe thin film at the interface. This work was supported by grants from the Research Grants Council of the Hong Kong Special Administrative Region, China (603010, SEGHKUST03).

High Curie temperature Bi(1.85)Mn(0.15)Te3 nanoplates.

PubMed

Cheng, Lina; Chen, Zhi-Gang; Ma, Song; Zhang, Zhi-dong; Wang, Yong; Xu, Hong-Yi; Yang, Lei; Han, Guang; Jack, Kevin; Lu, Gaoqing Max; Zou, Jin

2012-11-21

Bi(1.85)Mn(0.15)Te(3) hexagonal nanoplates with a width of ~200 nm and a thickness of ~20 nm were synthesized using a solvothermal method. According to the structural characterization and compositional analysis, the Mn(2+) and Mn(3+) ions were found to substitute Bi(3+) ions in the lattice. High-level Mn doping induces significant lattice distortion and decreases the crystal lattice by 1.07% in the a axis and 3.18% in the c axis. A high ferromagnetic state with a Curie temperature of ~45 K is observed in these nanoplates due to Mn(2+) and Mn(3+) ion doping, which is a significant progress in the field of electronics and spintronics.

Enhanced performance of dye-sensitized solar cell using Bi2Te3 nanotube/ZnO nanoparticle composite photoanode by the synergistic effect of photovoltaic and thermoelectric conversion

NASA Astrophysics Data System (ADS)

Dou, Yuanyao; Wu, Fang; Fang, Liang; Liu, Gaobin; Mao, Caiying; Wan, Kai; Zhou, Miao

2016-03-01

Ultralong and highly crystalline rhombohedral Bi2Te3 nanotubes were fabricated by a two-step solution phase reaction. A novel photoanode architecture has been fabricated by embedding 0-2.5 wt.% Bi2Te3 nanotubes into ZnO nanoparticles. The photocurrent density-voltage (J-V) characteristics reveal that the dye sensitized solar cells (DSSCs) with Bi2Te3/ZnO composite photoanode exhibit significantly enhanced photovoltaic performance. Notably, the DSSC incorporating 1.5 wt.% Bi2Te3 in the ZnO photoanode demonstrates an energy conversion efficiency (η) of 4.27%, which is 44.3% higher than that of the bare ZnO photoanode. The electrochemical impedance spectroscopy (EIS) analysis shows that the Bi2Te3 nanotubes can provide a direct pathway for electron transportation, prolong the lifetime of electrons, suppress the charge recombination and improve the electron collection efficiency. The thermoelectric effect analysis indicates that with the increase of irradiation time, Bi2Te3/ZnO composite photoanode could convert both heat and photon energies to electrical energy simultaneously and slow down the decline of η. The calculated electron density (ns) further proves that the increment of short-circuit current density (Jsc) is attributed to Seebeck effect in the composite photoanode. These results suggest that compositing 1D thermoelectric nano-materials in photoanode is a promising route to improve the performance of DSSCs.

Study of magnetism in Cr doped (Bi1-xSbx)2Te3

NASA Astrophysics Data System (ADS)

Richardella, Anthony; Kandala, Abhinav; Kempinger, Susan; Samarth, Nitin; Grutter, Alex; Borchers, Julie

2015-03-01

The quantum anomalous Hall (QAH) effect was first observed in Cr doped films of the topological insulator (TI) (Bi1-xSbx)2Te3. This ferromagnetic TI opens a gap at the Dirac point and, when the Fermi energy lies inside this gap, a quantized QAH conductance can be observed. The origin of ferromagnetism in this material is still not well understood with the mechanism typically attributed to either a high van-Vleck susceptibility or a carrier mediated RKKY like interaction. To elucidate this we have studied Cry(Bi1-xSbx)2-yTe3 thin films grown by MBE on SrTiO3 (STO) substrates using polarized neutron reflectivity (PNR) while in-situ backgating the film to change the position of the Fermi energy. The films are also characterized by XRD, AFM, TEM and low temperature transport measurements. PNR measurements provide a direct measure of the depth dependent magnetization of a sample. We use this to study how the magnetization changes as the Fermi energy is moved towards the Dirac point. Funded by DARPA and ARO-MURI.

Observation and Manipulation of Visible Edge Plasmons in Bi2Te3 Nanoplates.

PubMed

Lu, Xiaowei; Hao, Qunqing; Cen, Mengjia; Zhang, Guanhua; Sun, Julong; Mao, Libang; Cao, Tun; Zhou, Chuanyao; Jiang, Peng; Yang, Xueming; Bao, Xinhe

2018-05-09

Noble metals, like Ag and Au, are the most intensively studied plasmonic materials in the visible range. Plasmons in semiconductors, however, are usually believed to be in the infrared wavelength region due to the intrinsic low carrier concentrations. Herein, we observe the edge plasmon modes of Bi 2 Te 3 , a narrow-band gap semiconductor, in the visible spectral range using photoemission electron microscopy (PEEM). The Bi 2 Te 3 nanoplates excited by 400 nm femtosecond laser pulses exhibit strong photoemission intensities along the edges, which follow a cos 4 dependence on the polarization state of incident beam. Because of the phase retardation effect, plasmonic response along different edges can be selectively exited. The thickness-dependent photoemission intensities exclude the spin-orbit induced surface states as the origin of these plasmonic modes. Instead, we propose that the interband transition-induced nonequilibrium carriers might play a key role. Our results not only experimentally demonstrate the possibility of visible plasmons in semiconducting materials but also open up a new avenue for exploring the optical properties of topological insulator materials using PEEM.

On the structure of the disordered Bi 2Te 4O 11 phase

NASA Astrophysics Data System (ADS)

Masson, O.; Thomas, P.; Durand, O.; Hansen, T.; Champarnaud, J. C.; Mercurio, D.

2004-06-01

The structure of the disordered metastable Bi 2Te 4O 11 phase has been investigated using both neutron powder diffraction and reverse Monte Carlo (RMC) modelling. The average structure, of fluorite-type (space group Fm 3¯m ), is characterized by very high Debye-Waller parameters, especially for oxygen. Whereas the cations form a fairly well-defined FCC lattice, the oxygen sublattice is very disordered. It is shown that the local order is similar to that present in the stable monoclinic Bi 2Te 4O 11 phase. Clear differences are observed for the intermediate range order. The present phase is analogous to the "anti-glass" phases reported by Trömel in other tellurium-based mixed oxides. However, whereas Trömel defines anti-glass as having long range order but no short range order, it is shown here that this phase is best described as an intermediate state between the amorphous and crystalline states, i.e. having short and medium range order similar to that of tellurite glasses and a premise of long range order with the cations only.

Reliable contact fabrication on nanostructured Bi2Te3-based thermoelectric materials.

PubMed

Feng, Shien-Ping; Chang, Ya-Huei; Yang, Jian; Poudel, Bed; Yu, Bo; Ren, Zhifeng; Chen, Gang

2013-05-14

A cost-effective and reliable Ni-Au contact on nanostructured Bi2Te3-based alloys for a solar thermoelectric generator (STEG) is reported. The use of MPS SAMs creates a strong covalent binding and more nucleation sites with even distribution for electroplating contact electrodes on nanostructured thermoelectric materials. A reliable high-performance flat-panel STEG can be obtained by using this new method.

Structural Channels and Atomic-Cluster Insertion in CsxBi4Te6 (1 ≤ x ≤ 1.25) As Observed by Aberration-Corrected Scanning Transmission Electron Microscopy.

PubMed

Zhang, Ruixin; Yang, Huaixin; Guo, Cong; Tian, Huanfang; Shi, Honglong; Chen, Genfu; Li, Jianqi

2016-12-19

Microstructural analyses based on aberration-corrected scanning transmission electron microscopy (STEM) observations demonstrate that low-dimensional Cs x Bi 4 Te 6 materials, known to be a novel thermoelectric and superconducting system, contain notable structural channels that go directly along the b axis, which can be partially filled by atom clusters depending on the thermal treatment process. We successfully prepared two series of Cs x Bi 4 Te 6 single-crystalline samples using two different sintering processes. The Cs x Bi 4 Te 6 samples prepared using an air-quenching method show superconductivity at approximately 4 K, while the Cs x Bi 4 Te 6 with the same nominal compositions prepared by slowly cooling are nonsuperconductors. Moreover, atomic structural investigations of typical samples reveal that the structural channels are often empty in superconducting materials; thus, we can represent the superconducting phase as Cs 1-y Bi 4 Te 6 with considering the point defects in the Cs layers. In addition, the channels in the nonsuperconducting crystals are commonly partially occupied by triplet Bi clusters. Moreover, the average structures for these two phases are also different in their monoclinic angles (β), which are estimated to be 102.3° for superconductors and 100.5° for nonsuperconductors.

Surface quantum oscillations and weak antilocalization effect in topological insulator (Bi0.3Sb0.7)2Te3

NASA Astrophysics Data System (ADS)

Urkude, Rajashri; Rawat, Rajeev; Palikundwar, Umesh

2018-04-01

In 3D topological insulators, achieving a genuine bulk-insulating state is an important topic of research. The material system (Bi,Sb)2(Te,Se)3 has been proposed as a topological insulator with high resistivity and low carrier concentration. Topological insulators are predicted to present interesting surface transport phenomena but their experimental studies have been hindered by metallic bulk conduction that overwhelms the surface transport. Here we present a study of the bulk-insulating properties of (Bi0.3Sb0.7)2Te3. We show that a high resistivity exceeding 1 Ωm as a result of variable-range hopping behavior of state and Shubnikov-de Haas oscillations as coming from the topological surface state. We have been able to clarify both the bulk and surface transport channels, establishing a comprehensive understanding of the transport properties in this material. Our results demonstrate that (Bi0.3Sb0.7)2Te3 is a good material for studying the surface quantum transport in a topological insulator.

High pressure transport studies on Sb2Te3 and BiSbTe3

NASA Astrophysics Data System (ADS)

Jacobsen, Matthew; Cornelius, Andrew

2008-03-01

Interest regarding the abilities of thermoelectric materials has produced exciting results regarding their properties in the thin-film form [3]. However, little work has been done regarding the pressure tuning of the thermoelectric figure of merit for these materials materials. Some previous work has suggested that it would be useful to investigate this further using pressure tuning [1],[2]. Based upon this interest, facilities have been developed in our laboratory for the study of the relevant properties under high pressure up to near 20 GPa. Results of this work on Sb2Te3 and BiSbTe3 will be presented here from the use of these facilities. [1]Chen, G., Dresselhaus, M.S., Dresselhaus, G., Fleurial, J.-P., and Caillat, T. Recent developments in themoelectric materials. International Materials Reviews, 48, 45-66 (2003). [2]Rowe, D.M. CRC Handbook of Thermoelectric Materials. CRC Press, 1995. [3]Venkatasubramanian, R., Silvola, E., Colpitts, T., and O'Quinn, B. Thin-film thermoelectric devices with high room-temperature figures of merit. Nature, 413, 597-602, 2001.

Superconductivity in the orthorhombic phase of thermoelectric CsPb{sub x}Bi{sub 4−x}Te{sub 6} with 0.3≤x≤1.0

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, R.X.; Yang, H.X., E-mail: hxyang@iphy.ac.cn; Tian, H.F.

2015-12-15

Experimental measurements clearly reveal the presence of bulk superconductivity in the CsPb{sub x}Bi{sub 4−x}Te{sub 6} (0.3≤x≤1.0) materials, i.e. the first member of the thermoelectric series of Cs[Pb{sub m}Bi{sub 3}Te{sub 5+m}], these materials have the layered orthorhombic structure containing infinite anionic [PbBi{sub 3}Te{sub 6}]{sup −} slabs separated with Cs{sup +} cations. Temperature dependences of electrical resistivity, magnetic susceptibility, and specific heat have consistently demonstrated that the superconducting transition in Cs{sub 0.96}Pb{sub 0.25}Bi{sub 3.75}Te{sub 6.04} occurs at T{sub c}=3.1 K, with a superconducting volume fraction close to 100% at 1.8 K. Structural study using aberration-corrected STEM/TEM reveals a rich variety of microstructuralmore » phenomena in correlation with the Pb-ordering and chemical inhomogeneity. The superconducting material Cs{sub 0.96}Pb{sub 0.25}Bi{sub 3.75}Te{sub 6.04} with the highest T{sub c} shows a clear ordered structure with a modulation wave vector of q≈a*/2+c*/1.35 on the a–c plane. Our study evidently demonstrates that superconductivity deriving upon doping of narrow-gap semiconductor is a viable approach for exploration of novel superconductors. - Graphical abstract: Bulk superconductivity is discovered in the orthorhombic Cs{sub 0.96}Pb{sub 0.22}Bi{sub 3.80}Te{sub 6.02} materials with the superconducting transition T{sub c}=3.1 K. The compound shows a clear ordered structure with a modulation wave vector of q≈a*/2+c*/1.35 on the a–c plane. - Highlights: • Bulk superconductivity is discovered in the orthorhombic CsPb{sub x}Bi{sub 4−x}Te{sub 6} materials. • The superconducting transition in Cs{sub 0.96}Pb{sub 0.22}Bi{sub 3.80}Te{sub 6.02} occurs at T{sub c}=3.1 K. • Physical property measurements concerning the bulk superconductivity were present. • Structural modulation due to Pb-ordering was observed.« less

Bi2Te3 based passively Q-switched at 1042.76 and 1047 nm wavelength

NASA Astrophysics Data System (ADS)

Salim, M. A. M.; Shaharuddin, R. A.; Ismail, M. A.; Harun, S. W.; Ahmad, H.; Azzuhri, Saaidal R.

2017-12-01

In this paper, we propose and demonstrate the generation of dual wavelength based photonic crystal fiber passively Q-switched using few-layer TI:Bi2Te3 (bismuth telluride) saturable absorbers in a 1 micron waveband. The system employs a few-layer bismuth, induced onto a fiber ferrule using a dry oven method. A centered dual-wavelength output at 1042.76 and 1047.0 nm was produced from the Ytterbium doped fiber laser setup by incorporating 10 cm of photonic crystal fiber and finely adjusting the polarization controller. The self-started Q-switch had a pump power of 132.15 mW and a frequency ranging from 3.79 to 15.63 kHz. Therefore, TI:Bi2Te3 was suitable as a potential broadband SA in a 1 micron region.

Superconductivity in the 2-Dimensional Homologous Series AMm Bi3 Q5+m (m=1, 2) (A=Rb, Cs; M=Pb, Sn; Q=Se, Te).

PubMed

Malliakas, Christos D; Chung, Duck Young; Claus, Helmut; Kanatzidis, Mercouri G

2018-05-17

Superconductivity in the two-dimensional AM m Bi 3 Q 5+m family of semimetals is reported. The AMBi 3 Te 6 (m=1) and AM 2 Bi 3 Te 7 (m=2) members of the homologous series with A=Rb, Cs and M=Pb, Sn undergo a bulk superconducting transition ranging from 2.7 to 1.4 K depending on the composition. The estimated superconducting volume fraction is about 90 %. Superconducting phase diagrams as a function of chemical pressure are constructed for the solid solution products of each member of the homologous series, AMBi 3-x Sb x Te 6-y Se y and AM 2 Bi 3-x Sb x Te 7-y Se y (0≤x≤3 or 0≤y≤2). The structural flexibility of the ternary AM m M' 3 Te 5+m semiconducting homology to form isostructural analogues with a variety of metals, M=Pb, Sn; M'=Bi, Sb, gives access to a large number of electronic configurations and superconductivity due to chemical pressure effects. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Maximizing the thermoelectric performance of topological insulator Bi2Te3 films in the few-quintuple layer regime

NASA Astrophysics Data System (ADS)

Liang, Jinghua; Cheng, Long; Zhang, Jie; Liu, Huijun; Zhang, Zhenyu

2016-04-01

Using first-principles calculations and the Boltzmann theory, we explore the feasibility to maximize the thermoelectric figure of merit (ZT) of topological insulator Bi2Te3 films in the few-quintuple layer regime. We discover that the delicate competitions between the surface and bulk contributions, coupled with the overall quantum size effects, lead to a novel and generic non-monotonous dependence of ZT on the film thickness. In particular, when the system crosses into the topologically non-trivial regime upon increasing the film thickness, the much longer surface relaxation time associated with the robust nature of the topological surface states results in a maximal ZT value, which can be further optimized to ~2.0 under physically realistic conditions. We also reveal the appealing potential of bridging the long-standing ZT asymmetry of p- and n-type Bi2Te3 systems.Using first-principles calculations and the Boltzmann theory, we explore the feasibility to maximize the thermoelectric figure of merit (ZT) of topological insulator Bi2Te3 films in the few-quintuple layer regime. We discover that the delicate competitions between the surface and bulk contributions, coupled with the overall quantum size effects, lead to a novel and generic non-monotonous dependence of ZT on the film thickness. In particular, when the system crosses into the topologically non-trivial regime upon increasing the film thickness, the much longer surface relaxation time associated with the robust nature of the topological surface states results in a maximal ZT value, which can be further optimized to ~2.0 under physically realistic conditions. We also reveal the appealing potential of bridging the long-standing ZT asymmetry of p- and n-type Bi2Te3 systems. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00724d

Structural stability and phase transition of Bi 2 Te 3 under high pressure and low temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, J. L.; Zhang, S. J.; Zhu, J. L.

2017-09-01

Structural stability and phase transition of topological insulator Bi2Te3 were studied via angle-dispersive synchrotron radiation X-ray diffraction under high pressure and low temperature condition. The results manifest that the R-3m phase (phase I) is stable at 8 K over the pressure range up to 10 GPa and phase transition occurs between 8 K and 45 K at 8 GPa. According to the Birch-Murnaghan equation of state, the bulk modulus at ambient pressure B0 was estimated to be 45 ± 3 GPa with the assumption of B0' = 4. The structural robustness of phase I at 8 K suggests that themore » superconductivity below 10 GPa is related to phase I. Topological properties of superconducting Bi2Te3 phase under pressure were discussed.« less

Constructing nanoporous carbon nanotubes/Bi2Te3 composite for synchronous regulation of the electrical and thermal performances

NASA Astrophysics Data System (ADS)

Zhang, Qihao; Xu, Leilei; Zhou, Zhenxing; Wang, Lianjun; Jiang, Wan; Chen, Lidong

2017-02-01

Porous nanograined thermoelectric materials exhibit low thermal conductivity due to scattering of phonons by pores, which are favorable for thermoelectric applications. However, the benefit is not large enough to overcome the deficiency in the electrical performance. Herein, an approach is presented to reduce the thermal conductivity and synchronously enhance the electrical conductivity through constructing a nanoporous thermoelectric composite. Carbon nanotubes (CNTs) are truncated and homogeneously dispersed within the Bi2Te3 matrix by a cryogenic grinding (CG) technique for the first time, which efficiently suppress the Bi2Te3 grain growth and create nanopores with the size ranging from dozens to hundreds of nanometers. The lattice thermal conductivity is substantially decreased by broad wavelength phonon scattering resulting from nanopores, increased grain boundaries, and newly formed interfaces. Meanwhile, the electrical conductivity is improved due to the enhanced carrier mobility, which may originate from the bridging effect between the Bi2Te3 grains and CNTs. The maximum ZT is improved by almost a factor of 2 due to the simultaneous optimization of electrical and thermal performances. Our study demonstrates the superiority of constructing a bulk thermoelectric composite with nanopores by the uniform dispersion of CNTs through a CG technique for enhanced thermoelectric properties, which provides a wider approach to thermoelectric nanostructure engineering.

Induced unconventional superconductivity on the surface states of Bi2Te3 topological insulator.

PubMed

Charpentier, Sophie; Galletti, Luca; Kunakova, Gunta; Arpaia, Riccardo; Song, Yuxin; Baghdadi, Reza; Wang, Shu Min; Kalaboukhov, Alexei; Olsson, Eva; Tafuri, Francesco; Golubev, Dmitry; Linder, Jacob; Bauch, Thilo; Lombardi, Floriana

2017-12-08

Topological superconductivity is central to a variety of novel phenomena involving the interplay between topologically ordered phases and broken-symmetry states. The key ingredient is an unconventional order parameter, with an orbital component containing a chiral p x  + ip y wave term. Here we present phase-sensitive measurements, based on the quantum interference in nanoscale Josephson junctions, realized by using Bi 2 Te 3 topological insulator. We demonstrate that the induced superconductivity is unconventional and consistent with a sign-changing order parameter, such as a chiral p x  + ip y component. The magnetic field pattern of the junctions shows a dip at zero externally applied magnetic field, which is an incontrovertible signature of the simultaneous existence of 0 and π coupling within the junction, inherent to a non trivial order parameter phase. The nano-textured morphology of the Bi 2 Te 3 flakes, and the dramatic role played by thermal strain are the surprising key factors for the display of an unconventional induced order parameter.

Structural phase transitions of (Bi 1$-$xSb x ) 2(Te 1$-$y Se y) 3 compounds under high pressure and the influence of the atomic radius on the compression processes of tetradymites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Jinggeng; Yu, Zhenhai; Hu, Qingyang

Recently, A 2B 3-type tetradymites have developed into a hot topic in physical and material research fields, where the A and B atoms represent V and VI group elements, respectively. In this study, in situ angle-dispersive X-ray diffraction measurements were performed on Bi 2Te 2Se, BiSbTeSe 2, and Sb 2Te 2Se tetradymites under high pressure. Bi 2Te 2Se transforms from a layered rhombohedral structure (phase I) into 7-fold monoclinic (phase II) and body-centered tetragonal (phase IV) structures at about 8.0 and 14.3 GPa, respectively, without an 8-fold monoclinic structure (phase III) similar to that in Bi 2Te 3. Thus, themore » compression behavior of Bi 2Te 2Se is the same as that of Bi 2Se 3, which could also be obtained from first-principles calculations and in situ high-pressure electrical resistance measurements. Under high pressure, BiSbTeSe 2 and Sb 2Te 2Se undergo similar structural phase transitions to Bi 2Te 2Se, which indicates that the compression process of tellurides can be modulated by doping Se in Te sites. According to these high-pressure investigations of A 2B 3-type tetradymites, the decrease of the B-site atomic radius shrinks the stable pressure range of phase III and expands that of phase II, whereas the decrease of the A-site atomic radius induces a different effect, i.e. expanding the stable pressure range of phase III and shrinking that of phase II. Lastly, the influence of the atomic radius on the compression process of tetradymites is closely related to the chemical composition and the atom arrangement in the quintuple layer.« less

Structural phase transitions of (Bi 1$-$xSb x ) 2(Te 1$-$y Se y) 3 compounds under high pressure and the influence of the atomic radius on the compression processes of tetradymites

DOE PAGES

Zhao, Jinggeng; Yu, Zhenhai; Hu, Qingyang; ...

2016-12-14

Recently, A 2B 3-type tetradymites have developed into a hot topic in physical and material research fields, where the A and B atoms represent V and VI group elements, respectively. In this study, in situ angle-dispersive X-ray diffraction measurements were performed on Bi 2Te 2Se, BiSbTeSe 2, and Sb 2Te 2Se tetradymites under high pressure. Bi 2Te 2Se transforms from a layered rhombohedral structure (phase I) into 7-fold monoclinic (phase II) and body-centered tetragonal (phase IV) structures at about 8.0 and 14.3 GPa, respectively, without an 8-fold monoclinic structure (phase III) similar to that in Bi 2Te 3. Thus, themore » compression behavior of Bi 2Te 2Se is the same as that of Bi 2Se 3, which could also be obtained from first-principles calculations and in situ high-pressure electrical resistance measurements. Under high pressure, BiSbTeSe 2 and Sb 2Te 2Se undergo similar structural phase transitions to Bi 2Te 2Se, which indicates that the compression process of tellurides can be modulated by doping Se in Te sites. According to these high-pressure investigations of A 2B 3-type tetradymites, the decrease of the B-site atomic radius shrinks the stable pressure range of phase III and expands that of phase II, whereas the decrease of the A-site atomic radius induces a different effect, i.e. expanding the stable pressure range of phase III and shrinking that of phase II. Lastly, the influence of the atomic radius on the compression process of tetradymites is closely related to the chemical composition and the atom arrangement in the quintuple layer.« less

Electronic spectrum of non-tetrahedral acceptors in CdTe:Cl and CdTe:Bi,Cl single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krivobok, V. S., E-mail: krivobok@lebedev.ru; Moscow Institute of Physics and Technology; Nikolaev, S. N.

2016-02-07

The electronic spectra of complex acceptors in compensated CdTe:Cl, CdTe:Ag,Cl, and CdTe:Bi,Cl single crystals are studied using low-temperature photoluminescence (PL) measurements under both nonresonant and resonant excitation of distant donor–acceptor pairs (DAP). The wavelength modulation of the excitation source combined with the analysis of the differential PL signal is used to enhance narrow spectral features obscured because of inhomogeneous line broadening and/or excitation transfer for selectively excited DAPs. For the well-known tetrahedral (T{sub D}) Ag{sub Cd} acceptor, the energies of four excited states are measured, and the values obtained are shown to be in perfect agreement with the previous data.more » Moreover, splitting between the 2P{sub 3/2} (Γ{sub 8}) and 2S{sub 3/2} (Γ{sub 8}) states is clearly observed for Ag{sub Cd} centers located at a short distance (5–7 nm) from a hydrogen-like donor (Cl{sub Te}). This splitting results from the reduction of the T{sub D} symmetry taking place when the acceptor is a member of a donor–acceptor pair. For the Cl-related complex acceptor with an activation energy of ∼121 meV (A-center), the energies of eight excited states are measured. It is shown that this defect produces low-symmetry central-cell correction responsible for the strong splitting of S-like T{sub D} shells. The energy spectrum of the Bi-related shallow acceptor with an activation energy of ∼36 meV is measured as well. The spectrum obtained differs drastically from the hydrogen-like set of levels, which indicates the existence of repulsive low-symmetry perturbation of the hydrogen-like Coulomb potential. It is also shown that the spectra of selectively excited PL recorded for a macroscopic ensemble of distant donor–acceptor pairs allow one to detect the low symmetry of acceptors of a given type caused by their complex nature or by the Jahn–Teller distortion. This method does not require any additional (external) field

Thermal annealing effect on structural and thermoelectric properties of hexagonal Bi2Te3 nanoplate thin films by drop-casting technique

NASA Astrophysics Data System (ADS)

Hosokawa, Yuichi; Wada, Kodai; Tanaka, Masaki; Tomita, Koji; Takashiri, Masayuki

2018-02-01

High-purity hexagonal bismuth telluride (Bi2Te3) nanoplates were prepared by a solvothermal synthesis method, followed by the fabrication of nanoplate thin films by the drop-casting technique. The Bi2Te3 nanoplates exhibited a single-crystalline phase with a rhombohedral crystal structure. The nanoplates had a flat surface with edge sizes ranging from 500 to 2000 nm (average size of 1000 nm) and a thickness of less than 50 nm. The resulting Bi2Te3 nanoplate thin films were composed of well-aligned hexagonal nanoplates along the surface direction with an approximate film thickness of 40 µm. To tightly connect the nanoplates together within the thin films, thermal annealing was performed at different temperatures. We found that the thermoelectric properties, especially the Seebeck coefficient, were very sensitive to the annealing temperature. Finally, the optimum annealing temperature was determined to be 250 °C and the Seebeck coefficient and power factor were -300 µV/K and 3.5 µW/(cm·K2), respectively.

Exotic quantum properties under high magnetic fields and pressure-induced superconductivity in layered ZrTe5 and pyrite PtBi2

NASA Astrophysics Data System (ADS)

Tian, Mingliang; Tian, Zhaorong; Ning, Wei; Mingliang Tian Team

Topological Dirac semimetal is a newly discovered class of materials which has attracted intense attention. This material can be viewed as a three-dimensional (3D) analog of graphene and has linear energy dispersion in bulk, leading to a range of exotic transport properties. Here we report direct quantum transport evidence of the 3D Dirac semimetal phase of semimetallic materials ZrTe5 and pyrite PtBi2 by angular-dependent magnetoresistance measurements under high magnetic fields up to 35 T, as well as the pressure-induced superconductivity. We observed very clear negative longitudinal magnetoresistance in ZrTe5 induced by chiral anomaly under the condition of the magnetic field aligned only along the current direction, and the extreme large unsaturated magnetoresistance in pyrite PtBi2 up to 11.2 million percent at T = 1.8 K and 33 T, which surpasses the previously reported Dirac materials, such as LaSb, WTe2 and NbP. Analysis of the Shubnikov de Haas oscillations suggest that both ZrTe5 and PtBi2\\ are likely a new topological semimetals.

Influence of Mn concentration on magnetic topological insulator Mn xBi 2−xTe 3 thin-film Hall-effect sensor

DOE PAGES

Ni, Y.; Zhang, Z.; Nlebedim, I. C.; ...

2015-06-11

Hall-effect (HE) sensors based on high-quality Mn-doped Bi 2Te 3 topological insulator (TI) thin films have been systematically studied in this paper. Improvement of Hall sensitivity is found after doping the magnetic element Mn into Bi 2Te 3. The sensors with low Mn concentrations, Mn xBi 2-xTe 3, x = 0.01 and 0.08 show the linear behavior of Hall resistance with sensitivity about 5 Ω/T. And their Hall sensitivity shows weak dependence on temperature. For sensors with high Mn concentration (x = 0.23), the Hall resistance with respect to magnetic field shows a hysteretic behavior. Moreover, its sensitivity shows almostmore » eight times as high as that of the HE sensors with low Mn concentration. The highest sensitivity can reach 43 Ω/T at very low magnetic field. This increase of Hall sensitivity is caused by the occurrence of anomalous HE (AHE) after ferromagnetic phase transition. Our work indicates that the magnetic-element-doped TIs with AHE are good candidates for HE sensors.« less

MEMS/ECD Method for Making Bi(2-x)Sb(x)Te3 Thermoelectric Devices

NASA Technical Reports Server (NTRS)

Lim, James; Huang, Chen-Kuo; Ryan, Margaret; Snyder, G. Jeffrey; Herman, Jennifer; Fleurial, Jean-Pierre

2008-01-01

A method of fabricating Bi(2-x)Sb(x)Te3-based thermoelectric microdevices involves a combination of (1) techniques used previously in the fabrication of integrated circuits and of microelectromechanical systems (MEMS) and (2) a relatively inexpensive MEMS-oriented electrochemical-deposition (ECD) technique. The present method overcomes the limitations of prior MEMS fabrication techniques and makes it possible to satisfy requirements.

High field (up to 140 kOe) angle dependent magneto transport of Bi2Te3 single crystals

NASA Astrophysics Data System (ADS)

Sultana, Rabia; Maheshwari, P. K.; Tiwari, Brajesh; Awana, V. P. S.

2018-01-01

We report the angle dependent high field (up to 140 kOe) magneto transport of Bi2Te3 single crystals, a well-known topological insulator. The crystals were grown from melt of constituent elements via solid state reaction route by self-flux method. Details of crystal growth along with their brief characterisation up to 5 Tesla applied field was reported by some of us recently (Sultana et al 2017 J. Magn. Magn. Mater. 428 213). The angle dependence of the magneto-resistance (MR) of Bi2Te3 follows the cos (θ) function i.e., MR is responsive, when the applied field is perpendicular (tilt angle θ = 0° and/or 180°) to the transport current. The low field (±10 kOe) MR showed the signatures of weak anti localisation character with typical ν-type cusp near origin at 5 K. Further, the MR is linear right up to highest applied field of 140 kOe. The large positive MR are observed up to high temperatures and are above 250% and 150% at 140 kOe in perpendicular fields at 50 K and 100 K respectively. Heat capacity C P(T) measurements revealed the value of Debye temperature (ѲD) to be 135 K. Angle resolved photoemission spectroscopy data clearly showed that the bulk Bi2Te3 single crystal consists of a single Dirac cone.

Influence of Thickness on the Electrical Transport Properties of Exfoliated Bi2Te3 Ultrathin Films

NASA Astrophysics Data System (ADS)

Mo, D. L.; Wang, W. B.; Cai, Q.

2016-08-01

In this work, the mechanical exfoliation method has been utilized to fabricate Bi2Te3 ultrathin films. The thickness of the ultrathin films is revealed to be several tens of nanometers. Weak antilocalization effects and Shubnikov de Haas oscillations have been observed in the magneto-transport measurements on individual films with different thickness, and the two-dimensional surface conduction plays a dominant role. The Fermi level is found to be 81 meV above the Dirac point, and the carrier mobility can reach ~6030 cm2/(Vs) for the 10-nm film. When the film thickness decreases from 30 to 10 nm, the Fermi level will move 8 meV far from the bulk valence band. The coefficient α in the Hikami-Larkin-Nagaoka equation is shown to be ~0.5, manifesting that only the bottom surface of the Bi2Te3 ultrathin films takes part in transport conductions. These will pave the way for understanding thoroughly the surface transport properties of topological insulators.

Electronic and spin structure of the wide-band-gap topological insulator: Nearly stoichiometric Bi2Te2S

NASA Astrophysics Data System (ADS)

Annese, E.; Okuda, T.; Schwier, E. F.; Iwasawa, H.; Shimada, K.; Natamane, M.; Taniguchi, M.; Rusinov, I. P.; Eremeev, S. V.; Kokh, K. A.; Golyashov, V. A.; Tereshchenko, O. E.; Chulkov, E. V.; Kimura, A.

2018-05-01

We have grown the phase-homogeneous ternary compound with composition Bi2Te1.85S1.15 very close to the stoichiometric Bi2Te2S . The measurements performed with spin- and angle-resolved photoelectron spectroscopy as well as density functional theory and G W calculations revealed a wide-band-gap three-dimensional topological insulator phase. The surface electronic spectrum is characterized by the topological surface state (TSS) with Dirac point located above the valence band and Fermi level lying in the band gap. TSS band dispersion and constant energy contour manifest a weak warping effect near the Fermi level along with in-plane and out-of-plane spin polarization along the Γ ¯-K ¯ line. We identified four additional states at deeper binding energies with high in-plane spin polarization.

Bandgap modulation in photoexcited topological insulator Bi{sub 2}Te{sub 3} via atomic displacements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hada, Masaki, E-mail: hadamasaki@okayama-u.ac.jp; Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503; PRESTO, Japan Science and Technology Agency, Kawaguchi 332-0012

2016-07-14

The atomic and electronic dynamics in the topological insulator (TI) Bi{sub 2}Te{sub 3} under strong photoexcitation were characterized with time-resolved electron diffraction and time-resolved mid-infrared spectroscopy. Three-dimensional TIs characterized as bulk insulators with an electronic conduction surface band have shown a variety of exotic responses in terms of electronic transport when observed under conditions of applied pressure, magnetic field, or circularly polarized light. However, the atomic motions and their correlation between electronic systems in TIs under strong photoexcitation have not been explored. The artificial and transient modification of the electronic structures in TIs via photoinduced atomic motions represents a novelmore » mechanism for providing a comparable level of bandgap control. The results of time-domain crystallography indicate that photoexcitation induces two-step atomic motions: first bismuth and then tellurium center-symmetric displacements. These atomic motions in Bi{sub 2}Te{sub 3} trigger 10% bulk bandgap narrowing, which is consistent with the time-resolved mid-infrared spectroscopy results.« less

MOVPE growth and transport characterization of Bi2-xSbxTe3-ySey films

NASA Astrophysics Data System (ADS)

Kuznetsov, P. I.; Yakushcheva, G. G.; Shchamkhalova, B. S.; Jitov, V. A.; Temiryazev, A. G.; Sizov, V. E.; Yapaskurt, V. O.

2018-02-01

We present a first study of films of the quaternary Bi2-xSbxTe3-ySey solid solutions on (0 0 0 1) sapphire substrates grown by atmospheric pressure MOVPE. Trimethylbismuth, trimethylantimony, diisopropylselenide and diethyltelluride were used as precursors. To passivate the free bonds of the substrate and to improve the epitaxy, a thin (15 nm) ZnTe buffer layer was first grown. EDX analysis of the films grown at a temperature of 445 °C and about 10-fold excess of chalcogen in the vapor phase indicates on their compliance with V2VI3 stoichiometry. AFM and SEM investigations showed that at the initial stage of deposition the Stranski-Krastanov growth mode is dominant. Complete coalescence of nanoislands occurs at a thickness about 60 nm and further film formation is in the 2D layer-by-layer growth mode. A high mole fraction of antimony in the vapor phase leads to bad crystalline quality of the films and even to their discontinuity. Transport properties of the Bi2-xSbxTe3-ySey films were evaluated using Van der Pauw Hall effect measurements in the range of temperatures of 10-300 K. Some films are always n- or p-type; in other samples the change of conductivity from p- to n-type was observed when the temperature decreases.

High pressure X-ray diffraction studies on Bi2-xSbxTe3 (x=0,1,2) materials

NASA Astrophysics Data System (ADS)

Jacobsen, Matthew; Kumar, Ravhi; Cornelius, Andrew

2007-06-01

Recently Bi2Te3 based thermoelectric materials have gained importance due to their high thermoelectric figure of merit in thin films [3]. Pressure tuning of the thermoelectric figure of merit has been reported for several materials [1],[2]. In order to investigate the bulk properties of Bi2Te3, Sb2Te3, and their solid solution in detail, we have performed structural studies up to 20 GPa. Our diffraction results show that all three compounds transform from the ambient pressure structure to a high pressure phase between 5 and 7 GPa. Details of the results will be discussed in this presentation. [1]Chen, G., Dresselhaus, M.S., Dresselhaus, G., Fleurial, J.-P., and Caillat, T. Recent developments in themoelectric materials. International Materials Reviews, 48, 45-66 (2003). [2]Rowe, D.M. CRC Handbook of Thermoelectric Materials. CRC Press, 1995. [3]Venkatasubramanian, R., Silvola, E., Colpitts, T., and O'Quinn, B. Thin-film thermoelectric devices with high room-temperature figures of merit. Nature, 413, 597-602, 2001.

Evaluation of Electroplated Co-P Film as Diffusion Barrier Between In-48Sn Solder and SiC-Dispersed Bi2Te3 Thermoelectric Material

NASA Astrophysics Data System (ADS)

Li, Siyang; Yang, Donghua; Tan, Qing; Li, Liangliang

2015-06-01

The diffusion barrier property of Co-P film as a buffer layer between SiC-dispersed Bi2Te3 bulk material and In-48Sn solder was investigated. A Co-P film with thickness of ~6 µm was electroplated on SiC-dispersed Bi2Te3 substrate, joined with In-48Sn solder by a reflow process, and annealed at 100°C for up to 625 h. The formation and growth kinetics of intermetallic compounds (IMCs) at the interface between the In-48Sn and substrate were studied using transmission electron microscopy and scanning electron microscopy with energy-dispersive x-ray spectroscopy. The results showed that crystalline Co(In,Sn)3 formed as an irregular layer adjacent to the solder side at the solder/Co-P interface due to diffusion of Co towards the solder, and a small amount of amorphous Co45P13In12Sn30 appeared at the Co-P side because of diffusion of In and Sn into Co-P. The growth of Co(In,Sn)3 and Co45P13In12Sn30 during solid-state aging was slow, being controlled by interfacial reaction and diffusion, respectively. For comparison, In-48Sn/Bi2Te3-SiC joints were prepared and the IMCs in the joints analyzed. Without a diffusion barrier, In penetrated rapidly into the substrate, which led to the formation of amorphous In x Bi y phase in crystalline In4Te3 matrix. These IMCs grew quickly with prolongation of the annealing time, and their growth was governed by volume diffusion of elements. The experimental data demonstrate that electroplated Co-P film is an effective diffusion barrier for use in Bi2Te3-based thermoelectric modules.

Structural, vibrational, and electronic topological transitions of Bi1.5Sb0.5Te1.8Se1.2 under pressure

NASA Astrophysics Data System (ADS)

Kim, Joon-Seok; Juneja, Rinkle; Salke, Nilesh P.; Palosz, Witold; Swaminathan, Venkataraman; Trivedi, Sudhir; Singh, Abhishek K.; Akinwande, Deji; Lin, Jung-Fu

2018-03-01

Topological insulators have been the subject of intense research interest due to their unique surface states that are topologically protected against scattering or defects. However, the relationship between the crystal structure and topological insulator state remains to be clarified. Here, we show the effects of hydrostatic pressure on the structural, vibrational, and topological properties of the topological insulator Bi1.5Sb0.5Te1.8Se1.2 up to 45 GPa using X-ray diffraction and Raman spectroscopy in a diamond anvil cell, together with first-principles theoretical calculations. Two pressure-induced structural phase transitions were observed: from ambient rhombohedral R 3 ¯ m phase to a monoclinic C2/m phase at ˜13 GPa, and to a disordered I4/mmm phase at ˜22 GPa. In addition, the alloy undergoes several electronic transitions within the R 3 ¯ m phase: indirect to direct bulk band gap transition at ˜5.8 GPa, bulk gap closing with an appearance of Dirac semimetal (DSM) state at ˜8.2 GPa, and to a trivial semimetal state at ˜12.1 GPa. Anomalies in c/a ratio and Raman full width at half maximum that coincide with the DSM phase suggest the contribution of electron-phonon coupling to the transition. Compared to binary end members Bi2Te3, Bi2Se3, and Sb2Te3, the structural phase transition and anomaly were observed at higher pressures in Bi1.5Sb0.5Te1.8Se1.2. These results suggest that the topological transitions are precursors to the structural phase transitions.

Evidence of a 2D Fermi surface due to surface states in a p-type metallic Bi2Te3

NASA Astrophysics Data System (ADS)

Shrestha, K.; Marinova, V.; Lorenz, B.; Chu, C. W.

2018-05-01

We present a systematic quantum oscillations study on a metallic, p-type Bi2Te3 topological single crystal in magnetic fields up to B  =  7 T. The maxima/minima positions of oscillations measured at different tilt angles align to one another when plotted as a function of the normal component of magnetic field, confirming the presence of the 2D Fermi surface. Additionally, the Berry phase, β  =  0.4  ±  0.05 obtained from the Landau level fan plot, is very close to the theoretical value of 0.5 for the Dirac particles, confirming the presence of topological surface states in the Bi2Te3 single crystal. Using the Lifshitz–Kosevich analyses, the Fermi energy is estimated to be meV, which is lower than that of other bismuth-based topological systems. The detection of surface states in the Bi2Te3 crystal can be explained by our previous hypothesis of the lower position of the Fermi surface that cuts the ‘M’-shaped valence band maxima. As a result, the bulk state frequency is shifted to higher magnetic fields, which allows measurement of the surface states signal at low magnetic fields.

Magnetic quantum phase transition in Cr-doped Bi2(SexTe1-x)3 driven by the Stark effect

NASA Astrophysics Data System (ADS)

Zhang, Zuocheng; Feng, Xiao; Wang, Jing; Lian, Biao; Zhang, Jinsong; Chang, Cuizu; Guo, Minghua; Ou, Yunbo; Feng, Yang; Zhang, Shou-Cheng; He, Ke; Ma, Xucun; Xue, Qi-Kun; Wang, Yayu

2017-10-01

The recent experimental observation of the quantum anomalous Hall effect has cast significant attention on magnetic topological insulators. In these magnetic counterparts of conventional topological insulators such as Bi2Te3, a long-range ferromagnetic state can be established by chemical doping with transition-metal elements. However, a much richer electronic phase diagram can emerge and, in the specific case of Cr-doped Bi2(SexTe1-x)3, a magnetic quantum phase transition tuned by the actual chemical composition has been reported. From an application-oriented perspective, the relevance of these results hinges on the possibility to manipulate magnetism and electronic band topology by external perturbations such as an electric field generated by gate electrodes—similar to what has been achieved in conventional diluted magnetic semiconductors. Here, we investigate the magneto-transport properties of Cr-doped Bi2(SexTe1-x)3 with different compositions under the effect of a gate voltage. The electric field has a negligible effect on magnetic order for all investigated compositions, with the remarkable exception of the sample close to the topological quantum critical point, where the gate voltage reversibly drives a ferromagnetic-to-paramagnetic phase transition. Theoretical calculations show that a perpendicular electric field causes a shift in the electronic energy levels due to the Stark effect, which induces a topological quantum phase transition and, in turn, a magnetic phase transition.

Fabrication and Characterization of Bi2Te3-Based Chip-Scale Thermoelectric Energy Harvesting Devices

NASA Astrophysics Data System (ADS)

Cornett, Jane; Chen, Baoxing; Haidar, Samer; Berney, Helen; McGuinness, Pat; Lane, Bill; Gao, Yuan; He, Yifan; Sun, Nian; Dunham, Marc; Asheghi, Mehdi; Goodson, Ken; Yuan, Yi; Najafi, Khalil

2017-05-01

Thermoelectric energy harvesters convert otherwise wasted heat into electrical energy. As a result, they have the potential to play a critical role in the autonomous wireless sensor network signal chain. In this paper, we present work carried out on the development of Bi2Te3-based thermoelectric chip-scale energy harvesting devices. Process flow, device demonstration and characterization are highlighted.

Band gap modulation in magnetically doped low-defect thin films of (Bi1-xSbx)2 Te3 with minimized bulk carrier concentration

NASA Astrophysics Data System (ADS)

Maximenko, Yulia; Scipioni, Kane; Wang, Zhenyu; Katmis, Ferhat; Steiner, Charles; Weis, Adam; van Harlingen, Dale; Madhavan, Vidya

Topological insulators Bi2Te3 and Sb2Te3 are promising materials for electronics, but both are naturally prone to vacancies and anti-site defects that move the Fermi energy onto the bulk bands. Fabricating (Bi1-xSbx)2 Te3 (BST) with the tuned x minimizes point defects and unmasks topological surface states by reducing bulk carriers. BST thin films have shown topological surface states and quantum anomalous Hall effect. However, different studies reported variable Sb:Bi ratios used to grow an undoped BST film. Here, we develop a reliable way to grow defect-free subnanometer-flat BST thin films having the Fermi energy tuned to the Dirac point. High-resolution scanning tunneling microscopy (STM) and Landau level spectroscopy prove the importance of crystallinity and surface roughness-not only Sb:Bi ratio-for the final bulk carrier concentration. The BST thin films were doped with Cr and studied with STM with atomic resolution. Counterintuitively, Cr density is anticorrelated with the local band gap due to Cr's antiferromagnetic order. We analyze the correlations and report the relevant band gap values. Predictably, high external magnetic field compromises antiferromagnetic order, and the local band gap increases. US DOE DE-SC0014335; Moore Found. GBMF4860; F. Seitz MRL.

Bulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films

NASA Astrophysics Data System (ADS)

Ngabonziza, P.; Wang, Y.; Brinkman, A.

2018-04-01

An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi2Te3 topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band. For Bi2Te3 thin films grown by molecular beam epitaxy, we combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelectron spectroscopy) and magnetotransport analysis to understand the low defect density and record high bulk electron mobility once charge is doped into the bulk by surface degradation. Carrier densities and electronic mobilities extracted from the Hall effect and the quantum oscillations are consistent and reveal a large bulk carrier mobility. Because of the cylindrical shape of the bulk Fermi surface, the angle dependence of the bulk magnetoresistance oscillations is two dimensional in nature.

How grain boundaries affect the efficiency of poly-CdTe solar-cells: A fundamental atomic-scale study of grain boundary dislocation cores using CdTe bi-crystal thin films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klie, Robert

It is now widely accepted that grain boundaries in poly-crystalline CdTe thin film devices have a detrimental effect on the minority carrier lifetimes, the open circuit voltage and therefore the overall solar-cell performance. The goal of this project was to develop a fundamental understanding of the role of grain boundaries in CdTe on the carrier life-time, open-circuit voltage, Voc, and the diffusion of impurities. To achieve this goal, i) CdTe bi-crystals were fabricated with various misorientation angels, ii) the atomic- and electronic structures of the grain boundaries were characterized using scanning transmission electron microscopy (STEM), and iii) first-principles density functionalmore » theory modeling was performed on the structures determined by STEM to predict the grain boundary potential. The transport properties and minority carrier lifetimes of the bi-crystal grain boundaries were measured using a variety of approaches, including TRPL, and provided feedback to the characterization and modeling effort about the effectiveness of the proposed models.« less

Phonon Drag in Thin Films, Cases of Bi2Te3 and ZnTe

NASA Astrophysics Data System (ADS)

Chi, Hang; Uher, Ctirad

2014-03-01

At low temperatures, in (semi-)conductors subjected to a thermal gradient, charge carriers (electrons and holes) are swept (dragged) by out-of-equilibrium phonons due to strong electron-phonon interaction, giving rise to a large contribution to the Seebeck coefficient called the phonon-drag effect. Such phenomenon was surprisingly observed in our recent transport study of highly mismatched alloys as potential thermoelectric materials: a significant phonon-drag thermopower reaching 1.5-2.5 mV/K was recorded for the first time in nitrogen-doped ZnTe epitaxial layers on GaAs (100). In thin films of Bi2Te3, we demonstrate a spectacular influence of substrate phonons on charge carriers. We show that one can control and tune the position and magnitude of the phonon-drag peak over a wide range of temperatures by depositing thin films on substrates with vastly different Debye temperatures. Our experiments also provide a way to study the nature of the phonon spectrum in thin films, which is rarely probed but clearly important for a complete understanding of thin film properties and the interplay of the substrate and films. This work is supported by the Center for Solar and Thermal Energy Conversion, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0000957.

Significantly improved dielectric performances of nanocomposites via loading two-dimensional core-shell structure Bi2Te3@SiO2 nanosheets

NASA Astrophysics Data System (ADS)

Chen, Jianwen; Wang, Xiucai; Yu, Xinmei; Fan, Yun; Duan, Zhikui; Jiang, Yewen; Yang, Faquan; Zhou, Yuexia

2018-07-01

Polymer/semiconductor-insulator nanocomposites can display high dielectric constants with a relatively low dissipation factor under low electric fields, and thus seem to promising for high energy density capacitors. Here, a novel nanocomposite films is developed by loading two-dimensional (2D) core-shell structure Bi2Te3@SiO2 nanosheets in the poly (vinylidene fluoride-hexafluoro propylene) (P(VDF-HFP)) polymer matrix. The 2D Bi2Te3 nanosheets were prepared through simple microwave-assisted method. The experimental results suggesting that the SiO2 shell layer between the fillers and polymer matrix could effectively improve the dielectric constant, dielectric loss, AC conductivity, and breakdown strength of composites films. The composite films load with 10 vol.% 2D Bi2Te3@SiO2 nanosheets exhibits a high dielectric constant of 70.3 at 1 kHz and relatively low dielectric loss of 0.058 at 1 kHz. The finite element simulation of electric field and electric current density distribution revealed that the SiO2 shell layer between the fillers and polymer matrix could effectively improve the energy loss, local electric field strength, and breakdown strength of composite films. Therefore, this work will provide a promising route to achieve high-performance capacitors.

Optoelectronic and Thermoelectric Properties of Bi2OX 2 (X = S, Se, Te) for Solar Cells and Thermoelectric Devices

NASA Astrophysics Data System (ADS)

Azam, Sikander; Khan, Saleem Ayaz; Goumri-Said, Souraya

2018-02-01

We have explored the optoelectronic structure and related thermoelectric properties of Bi2OX 2 (X = S, Se, Te) using density functional theory and spin-orbit coupling (SOC). We report herein calculations of the bandgap of these bismuth sulfides/oxysulfides to participate in the recent debate regarding such values. The generalized gradient approximation calculations corrected using the SOC scheme estimated bandgaps of 0.950 eV, 0.635 eV, and 0.441 eV for Bi2OS2, Bi2OSe2, and Bi2OTe2, respectively, in close agreement with experimental results and showing better accuracy compared with available theoretical calculations. This bandgap range shows the potential use of Bi2OX 2 for solar cell applications. Hence, we derived their optical and thermoelectric properties. Similarly to one of the parent materials, Bi2S3, a semiconductor with special photovoltaic and thermoelectric properties, the present derivatives Bi2OX 2 show promising characteristics for exploration in the near future for use in solar cells and thermoelectric devices.

Substitution-induced spin-splitted surface states in topological insulator (Bi1−xSbx)2Te3

PubMed Central

He, Xiaoyue; Li, Hui; Chen, Lan; Wu, Kehui

2015-01-01

We present a study on surface states of topological insulator (Bi1−xSbx)2Te3 by imaging quasiparticle interference patterns (QPI) using low temperature scanning tunneling microscope. Besides the topological Dirac state, we observed another surface state with chiral spin texture within the conduction band range. The quasiparticle scattering in this state is selectively suppressed. Combined with first-principles calculations, we attribute this state to a spin-splitted band induced by the substitution of Bi with Sb atoms. Our results demonstrate that the coexistence of topological order and alloying may open wider tunability in quantum materials. PMID:25743262

Stress-controlled thermoelectric module for energy harvesting and its application for the significant enhancement of the power factor of Bi2Te3-based thermoelectrics

NASA Astrophysics Data System (ADS)

Korobeinikov, Igor V.; Morozova, Natalia V.; Lukyanova, Lidia N.; Usov, Oleg A.; Kulbachinskii, Vladimir A.; Shchennikov, Vladimir V.; Ovsyannikov, Sergey V.

2018-01-01

We propose a model of a thermoelectric module in which the performance parameters can be controlled by applied tuneable stress. This model includes a miniature high-pressure anvil-type cell and a specially designed thermoelectric module that is compressed between two opposite anvils. High thermally conductive high-pressure anvils that can be made, for instance, of sintered technical diamonds with enhanced thermal conductivity, would enable efficient heat absorption or rejection from a thermoelectric module. Using a high-pressure cell as a prototype of a stress-controlled thermoelectric converter, we investigated the effect of applied high pressure on the power factors of several single-crystalline thermoelectrics, including binary p-type Bi2Te3, and multi-component (Bi,Sb)2Te3 and Bi2(Te,Se,S)3 solid solutions. We found that a moderate applied pressure of a few GPa significantly enhances the power factors of some of these thermoelectrics. Thus, they might be more efficiently utilized in stress-controlled thermoelectric modules. In the example of one of these thermoelectrics crystallizing in the same rhombohedral structure, we examined the crystal lattice stability under moderate high pressures. We uncovered an abnormal compression of the rhombohedral lattice of (Bi0.25,Sb0.75)2Te3 along the c-axis in a hexagonal unit cell, and detected two phase transitions to the C2/m and C2/c monoclinic structures above 9.5 and 18 GPa, respectively.

Maximizing the thermoelectric performance of topological insulator Bi2Te3 films in the few-quintuple layer regime

NASA Astrophysics Data System (ADS)

Liu, Huijun; Liang, Jinghua; Cheng, Long; Zhang, Jie; Zhang, Zhenyu

Using first-principles calculations and Boltzmann theory, we explore the feasibility to maximize the thermoelectric figure of merit (ZT) of topological insulator Bi2Te3 films in the few-quintuple layer regime. We discover that the delicate competitions between the surface and bulk contributions, coupled with the overall quantum size effects, lead to a novel and generic non-monotonous dependence of ZT on the film thickness. In particular, when the system crosses into the topologically non-trivial regime upon increasing the film thickness, the much longer surface relaxation time associated with the robust nature of the topological surface states results in a maximal ZT value, which can be further optimized to ~2.0 under physically realistic conditions. We also reveal the appealing potential of bridging the long-standing ZT asymmetry of p- and n-type Bi2Te3 systems. These findings help to establish intricate connections between the thermoelectric materials and topological insulators.

A Study of the Crystal Structure of Co40Fe40B20 Epitaxial Films on a Bi2Te3 Topological Insulator

NASA Astrophysics Data System (ADS)

Kaveev, A. K.; Suturin, S. M.; Sokolov, N. S.; Kokh, K. A.; Tereshchenko, O. E.

2018-03-01

Laser molecular-beam epitaxy has been used to form Co40Fe40B20 layers on Bi2Te3 topological insulator substrates, and their growth conditions have been studied. The possibility of growing epitaxial ferromagnetic layers on the surface of a topological insulator is demonstrated for the first time. The CoFeB layers have a body-centered cubic crystal structure with the (111) crystal plane parallel to the (0001) plane of Bi2Te3. 3D mapping in the reciprocal space of high-energy electron-diffraction patterns made it possible to determine the epitaxial relationships between the film and the substrate.

Gate-Variable Mid-Infrared Optical Transitions in a (Bi1-xSbx)2Te3 Topological Insulator.

PubMed

Whitney, William S; Brar, Victor W; Ou, Yunbo; Shao, Yinming; Davoyan, Artur R; Basov, D N; He, Ke; Xue, Qi-Kun; Atwater, Harry A

2017-01-11

We report mid-infrared spectroscopy measurements of ultrathin, electrostatically gated (Bi 1-x Sb x ) 2 Te 3 topological insulator films in which we observe several percent modulation of transmittance and reflectance as gating shifts the Fermi level. Infrared transmittance measurements of gated films were enabled by use of an epitaxial lift-off method for large-area transfer of topological insulator films from infrared-absorbing SrTiO 3 growth substrates to thermal oxidized silicon substrates. We combine these optical experiments with transport measurements and angle-resolved photoemission spectroscopy to identify the observed spectral modulation as a gate-driven transfer of spectral weight between both bulk and 2D topological surface channels and interband and intraband channels. We develop a model for the complex permittivity of gated (Bi 1-x Sb x ) 2 Te 3 and find a good match to our experimental data. These results open the path for layered topological insulator materials as a new candidate for tunable, ultrathin infrared optics and highlight the possibility of switching topological optoelectronic phenomena between bulk and spin-polarized surface regimes.

Electronic structure and low temperature magnetoresistance of polycrystalline TlMQ2 (M = Sc, Bi, Q = Se, Te)

NASA Astrophysics Data System (ADS)

Aswathy, Vijayakumar Sajitha; Varma, Manoj Raama; Sankar, Cheriyedath Raj

2018-05-01

Thallium based ternary chalcogenide TlBiSe2 having α-NaFeO2 structure type is a candidate of 3D topological insulator family with very large positive linear magnetoresistance. Herein, we report the magnetoresistance studies along with the electronic structure of TlScQ2 (Q = Se, Te) system of the same structure type. Our calculations predict selenide to be a narrow indirect band-gap semiconductor whereas telluride is metallic with intriguing band dispersion characteristics. We observed huge positive MR for the polycrystalline TlBiSe2 and comparatively low MR for TlScQ2 which limits their chance to possess nontrivial surface states.

Nanocomposites from Solution-Synthesized PbTe-BiSbTe Nanoheterostructure with Unity Figure of Merit at Low-Medium Temperatures (500-600 K).

PubMed

Xu, Biao; Agne, Matthias T; Feng, Tianli; Chasapis, Thomas C; Ruan, Xiulin; Zhou, Yilong; Zheng, Haimei; Bahk, Je-Hyeong; Kanatzidis, Mercouri G; Snyder, Gerald Jeffrey; Wu, Yue

2017-03-01

A scalable, low-temperature solution process is used to synthesize precursor material for Pb-doped Bi 0.7 Sb 1.3 Te 3 thermoelectric nanocomposites. The controllable Pb-doping leads to the increase in the optical bandgap, thus delaying the onset of bipolar conduction. Furthermore, the solution synthesis enables nanostructuring, which greatly reduces thermal conductivity. As a result, this material exhibits a zT = 1 over the 513-613 K range. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low-Temperature Bonding of Bi0.5Sb1.5Te3 Thermoelectric Material with Cu Electrodes Using a Thin-Film In Interlayer

NASA Astrophysics Data System (ADS)

Lin, Yan-Cheng; Yang, Chung-Lin; Huang, Jing-Yi; Jain, Chao-Chi; Hwang, Jen-Dong; Chu, Hsu-Shen; Chen, Sheng-Chi; Chuang, Tung-Han

2016-09-01

A Bi0.5Sb1.5Te3 thermoelectric material electroplated with a Ni barrier layer and a Ag reaction layer was bonded with a Ag-coated Cu electrode at low temperatures of 448 K (175 °C) to 523 K (250 °C) using a 4- μm-thick In interlayer under an external pressure of 3 MPa. During the bonding process, the In thin film reacted with the Ag layer to form a double layer of Ag3In and Ag2In intermetallic compounds. No reaction occurred at the Bi0.5Sb1.5Te3/Ni interface, which resulted in low bonding strengths of about 3.2 MPa. The adhesion of the Bi0.5Sb1.5Te3/Ni interface was improved by precoating a 1- μm Sn film on the surface of the thermoelectric element and preheating it at 523 K (250 °C) for 3 minutes. In this case, the bonding strengths increased to a range of 9.1 to 11.5 MPa after bonding at 473 K (200 °C) for 5 to 60 minutes, and the shear-tested specimens fractured with cleavage characteristics in the interior of the thermoelectric material. The bonding at 448 K (175 °C) led to shear strengths ranging from 7.1 to 8.5 MPa for various bonding times between 5 and 60 minutes, which were further increased to the values of 10.4 to 11.7 MPa by increasing the bonding pressure to 9.8 MPa. The shear strengths of Bi0.5Sb1.5Te3/Cu joints bonded with the optimized conditions of the modified solid-liquid interdiffusion bonding process changed only slightly after long-term exposure at 473 K (200 °C) for 1000 hours.

Thickness dependent band gap of Bi{sub 2-x}Sb{sub x}Te{sub 3} (x = 0, 0.05, 0.1) thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patel, M. M.; Soni, P. H., E-mail: phsoni-msu@yahoo.com; Desai, C. F.

2016-05-23

Thin films of Bi{sub 2}Te{sub 3}(Sb) were prepared on alkali halide crystal substrates. Sb content and the film thickness were varied. Bi{sub 2}Te{sub 3} is a narrow gap semiconductor. Bi-Sb is a continuous solid solution of substitutional type and Sb therefore was used to test its effect on the band gap. The film thickness variation was also taken up. The infra-red absorption spectra were used in the wave number range 400 cm{sup −1} to 4000 cm{sup −1}. The band gap obtained from the absorption data was found to increase with decreasing thickness since the thickness range used was from 30more » nm to 170 nm. This is a range corresponding to nanostructures and hence quantum size effect was observed as expected. The band gap also exhibited Sb content dependence. The detail results are have been reported and explained.« less

Effects of impurity adsorption on topological surface states of Bi2Te3

NASA Astrophysics Data System (ADS)

Shati, Khaqan; Arshad Farhan, M.; Selva Chandrasekaran, S.; Shim, Ji Hoon; Lee, Geunsik

2017-08-01

Electronic structures of Bi2Te3 with adsorption of Rb, In, Ga and Au atoms are studied by using the first-principle method, focusing on the effect of non-magnetic impurities on the topologically protected surface states. Upon monolayer formation, the bulk conduction band is moved down to the Fermi level with a significant Rashba splitting due to n-doping behavior with band modification details depending on the adatom chemistry. Our study shows the robustness of the intrinsic spin-momentum coupled surface band and emergence of a new similar one, which could provide helpful insight for developing novel spintronic devices.

Exploring the Electronic Structure and Chemical Homogeneity of Individual Bi2Te3 Nanowires by Nano-Angle-Resolved Photoemission Spectroscopy.

PubMed

Krieg, Janina; Chen, Chaoyu; Avila, José; Zhang, Zeying; Sigle, Wilfried; Zhang, Hongbin; Trautmann, Christina; Asensio, Maria Carmen; Toimil-Molares, Maria Eugenia

2016-07-13

Due to their high surface-to-volume ratio, cylindrical Bi2Te3 nanowires are employed as model systems to investigate the chemistry and the unique conductive surface states of topological insulator nanomaterials. We report on nanoangle-resolved photoemission spectroscopy (nano-ARPES) characterization of individual cylindrical Bi2Te3 nanowires with a diameter of 100 nm. The nanowires are synthesized by electrochemical deposition inside channels of ion-track etched polymer membranes. Core level spectra recorded with submicron resolution indicate a homogeneous chemical composition along individual nanowires, while nano-ARPES intensity maps reveal the valence band structure at the single nanowire level. First-principles electronic structure calculations for chosen crystallographic orientations are in good agreement with those revealed by nano-ARPES. The successful application of nano-ARPES on single one-dimensional nanostructures constitutes a new avenue to achieve a better understanding of the electronic structure of topological insulator nanomaterials.

Thermoelectric Properties of Cu-doped Bi2-xSbxTe3 Prepared by Encapsulated Melting and Hot Pressing

NASA Astrophysics Data System (ADS)

Jung, Woo-Jin; Kim, Il-Ho

2018-03-01

P-type Bi2-xSbxTe3:Cum (x = 1.5-1.7 and m = 0.002-0.003) solid solutions were synthesized using encapsulated melting and were consolidated using hot pressing. The effects of Sb substitution and Cu doping on the charge transport and thermoelectric properties were examined. The lattice constants decreased with increasing Sb and Cu contents. As the amount of Sb substitution and Cu doping was increased, the electrical conductivity increased, and the Seebeck coefficient decreased owing to the increase in the carrier concentration. All specimens exhibited degenerate semiconductor characteristics and positive Hall and Seebeck coefficients, indicating p-type conduction. The increased Sb substitution caused a shift in the onset temperature of the intrinsic transition and bipolar conduction to higher temperatures. The electronic thermal conductivity increased with increasing Sb and Cu contents owing to the increase in the carrier concentration, while the lattice thermal conductivity slightly decreased due to alloy scattering. A maximum figure of merit, ZTmax = 1.25, was achieved at 373 K for Bi0.4Sb1.6Te3:Cu0.003.

Self-Tuning n-Type Bi2(Te,Se)3/SiC Thermoelectric Nanocomposites to Realize High Performances up to 300 °C.

PubMed

Pan, Yu; Aydemir, Umut; Sun, Fu-Hua; Wu, Chao-Feng; Chasapis, Thomas C; Snyder, G Jeffrey; Li, Jing-Feng

2017-11-01

Bi 2 Te 3 thermoelectric materials are utilized for refrigeration for decades, while their application of energy harvesting requires stable thermoelectric and mechanical performances at elevated temperatures. This work reveals that a steady zT of ≈0.85 at 200 to 300 °C can be achieved by doping small amounts of copper iodide (CuI) in Bi 2 Te 2.2 Se 0.8 -silicon carbide (SiC) composites, where SiC nanodispersion enhances the flexural strength. It is found that CuI plays two important roles with atomic Cu/I dopants and CuI precipitates. The Cu/I dopants show a self-tuning behavior due to increasing solubility with increasing temperatures. The increased doping concentration increases electrical conductivity at high temperatures and effectively suppresses the intrinsic excitation. In addition, a large reduction of lattice thermal conductivity is achieved due to the "in situ" CuI nanoprecipitates acting as phonon-scattering centers. Over 60% reduction of bipolar thermal conductivity is achieved, raising the maximum useful temperature of Bi 2 Te 3 for substantially higher efficiency. For module applications, the reported materials are suitable for segmentation with a conventional ingot. This leads to high device ZT values of ≈0.9-1.0 and high efficiency up to 9.2% from 300 to 573 K, which can be of great significance for power generation from waste heat.

Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9

NASA Astrophysics Data System (ADS)

Shrestha, K.; Graf, D.; Marinova, V.; Lorenz, B.; Chu, C. W.

2017-10-01

We have investigated the weak antilocalization (WAL) effect in the p-type Bi2Se2.1Te0.9 topological system. The magnetoconductance shows a cusp-like feature at low magnetic fields, indicating the presence of the WAL effect. The WAL curves measured at different tilt angles merge together when they are plotted as a function of the normal field components, showing that surface states dominate the magnetoconductance in the Bi2Se2.1Te0.9 crystal. We have calculated magnetoconductance per conduction channel and applied the Hikami-Larkin-Nagaoka formula to determine the physical parameters that characterize the WAL effect. The number of conduction channels and the phase coherence length do not change with temperature up to T = 5 K. In addition, the sample shows a large positive magnetoresistance that reaches 1900% under a magnetic field of 35 T at T = 0.33 K with no sign of saturation. The magnetoresistance value decreases with both increasing temperature and tilt angle of the sample surface with respect to the magnetic field. The large magnetoresistance of topological insulators can be utilized in future technology such as sensors and memory devices.

Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb) 2Te 3 film

DOE PAGES

Li, W.; Claassen, M.; Chang, Cui -Zu; ...

2016-09-07

The experimental realization of the quantum anomalous Hall (QAH) effect in magnetically-doped (Bi, Sb) 2Te 3 films stands out as a landmark of modern condensed matter physics. However, ultra-low temperatures down to few tens of mK are needed to reach the quantization of Hall resistance, which is two orders of magnitude lower than the ferromagnetic phase transition temperature of the films. Here, we systematically study the band structure of V-doped (Bi, Sb) 2Te 3 thin films by angle-resolved photoemission spectroscopy (ARPES) and show unambiguously that the bulk valence band (BVB) maximum lies higher in energy than the surface state Diracmore » point. Finally, our results demonstrate clear evidence that localization of BVB carriers plays an active role and can account for the temperature discrepancy.« less

Quasiparticle Scattering in the Rashba Semiconductor BiTeBr: The Roles of Spin and Defect Lattice Site.

PubMed

Butler, Christopher John; Yang, Po-Ya; Sankar, Raman; Lien, Yen-Neng; Lu, Chun-I; Chang, Luo-Yueh; Chen, Chia-Hao; Wei, Ching-Ming; Chou, Fang-Cheng; Lin, Minn-Tsong

2016-09-28

Observations of quasiparticle interference have been used in recent years to examine exotic carrier behavior at the surfaces of emergent materials, connecting carrier dispersion and scattering dynamics to real-space features with atomic resolution. We observe quasiparticle interference in the strongly Rashba split 2DEG-like surface band found at the tellurium termination of BiTeBr and examine two mechanisms governing quasiparticle scattering: We confirm the suppression of spin-flip scattering by comparing measured quasiparticle interference with a spin-dependent elastic scattering model applied to the calculated spectral function. We also use atomically resolved STM maps to identify point defect lattice sites and spectro-microscopy imaging to discern their varying scattering strengths, which we understand in terms of the calculated orbital characteristics of the surface band. Defects on the Bi sublattice cause the strongest scattering of the predominantly Bi 6p derived surface band, with other defects causing nearly no scattering near the conduction band minimum.

Creation and Analysis of Atomic Structures for CdTe Bi-crystal Interfaces by the Grain Boundary Genie

DOE Office of Scientific and Technical Information (OSTI.GOV)

Buurma, Christopher; Sen, Fatih G.; Paulauskas, Tadas

2015-01-01

Grain boundaries (GB) in poly-CdTe solar cells play an important role in species diffusion, segregation, defect formation, and carrier recombination. While the creation of specific high-symmetry interfaces can be straight forward, the creation of general GB structures in many material systems is difficult if periodic boundary conditions are to be enforced. Here we describe a novel algorithm and implementation to generate initial general GB structures for CdTe in an automated way, and we investigate some of these structures using density functional theory (DFT). Example structures include those with bi-crystals already fabricated for comparison, and those planning to be investigated inmore » the future.« less

Electronic tuning of the transport properties of off-stoichiometric Pb{sub x}Sn{sub 1−x}Te thermoelectric alloys by Bi{sub 2}Te{sub 3} doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guttmann, Gilad M.; Dadon, David; Gelbstein, Yaniv

2015-08-14

The recent energy demands affected by the dilution of conventional energy resources and the growing awareness of environmental considerations had motivated many researchers to seek for novel renewable energy conversion methods. Thermoelectric direct conversion of thermal into electrical energies is such a method, in which common compositions include IV-VI semiconducting compounds (e.g., PbTe and SnTe) and their alloys. For approaching practical thermoelectric devices, the current research is focused on electronic optimization of off-stoichiometric p-type Pb{sub x}Sn{sub 1−x}Te alloys by tuning of Bi{sub 2}Te{sub 3} doping and/or SnTe alloying levels, while avoiding the less mechanically favorable Na dopant. It was shownmore » that upon such doping/alloying, higher ZTs, compared to those of previously reported undoped Pb{sub 0.5}Sn{sub 0.5}Te alloy, were obtained at temperatures lower than 210–340 °C, depending of the exact doping/alloying level. It was demonstrated that upon optimal grading of the carrier concentration, a maximal thermoelectric efficiency enhancement of ∼38%, compared to that of an undoped material, is expected.« less

Localized Vibrations of Bi Bilayer Leading to Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in Weak Topological Insulator n-Type BiSe.

PubMed

Samanta, Manisha; Pal, Koushik; Pal, Provas; Waghmare, Umesh V; Biswas, Kanishka

2018-05-02

Realization of high thermoelectric performance in n-type semiconductors is of imperative need on account of the dearth of efficient n-type thermoelectric materials compared to the p-type counterpart. Moreover, development of efficient thermoelectric materials based on Te-free compounds is desirable because of the scarcity of Te in the Earth's crust. Herein, we report the intrinsic ultralow thermal conductivity and high thermoelectric performance near room temperature in n-type BiSe, a Te-free solid, which recently has emerged as a weak topological insulator. BiSe possesses a layered structure consisting of a bismuth bilayer (Bi 2 ) sandwiched between two Bi 2 Se 3 quintuple layers [Se-Bi-Se-Bi-Se], resembling natural heterostructure. High thermoelectric performance of BiSe is realized through the ultralow lattice thermal conductivity (κ lat of ∼0.6 W/mK at 300 K), which is significantly lower than that of Bi 2 Se 3 (κ lat of ∼1.8 W/mK at 300 K), although both of them belong to the same layered homologous family (Bi 2 ) m (Bi 2 Se 3 ) n . Phonon dispersion calculated from first-principles and the experimental low-temperature specific heat data indicate that soft localized vibrations of bismuth bilayer in BiSe are responsible for its ultralow κ lat . These low energy optical phonon branches couple strongly with the heat carrying acoustic phonons, and consequently suppress the phonon mean free path leading to low κ lat . Further optimization of thermoelectric properties of BiSe through Sb substitution and spark plasma sintering (SPS) results in high ZT ∼ 0.8 at 425 K along the pressing direction, which is indeed remarkable among Te-free n-type thermoelectric materials near room temperature.

Low carrier concentration crystals of the topological insulator Bi2-xSbxTe3-ySey: a magnetotransport study

NASA Astrophysics Data System (ADS)

Pan, Y.; Wu, D.; Angevaare, J. R.; Luigjes, H.; Frantzeskakis, E.; de Jong, N.; van Heumen, E.; Bay, T. V.; Zwartsenberg, B.; Huang, Y. K.; Snelder, M.; Brinkman, A.; Golden, M. S.; de Visser, A.

2014-12-01

In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)2(Te,Se)3 (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren et al 2011 Phys. Rev. B 84 165311). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized BSTS single crystals with compositions around x = 0.5 and y = 1.3. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi1.46Sb0.54Te1.7Se1.3. The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to 1 μm. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with α ≃ -1 as expected for transport dominated by topological surface states.

Surface Collective Modes in the Topological Insulators Bi 2 Se 3 and Bi 0.5 Sb 1.5 Te 3 - x Se x

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kogar, A.; Vig, S.; Thaler, A.

We used low-energy, momentum-resolved inelastic electron scattering to study surface collective modes of the three-dimensional topological insulators Bi 2 Se 3 and Bi 0.5 Sb 1.5 Te 3 - x Se x . Our goal was to identify the “spin plasmon” predicted by Raghu and co-workers [Phys. Rev. Lett. 104, 116401 (2010)]. Instead, we found that the primary collective mode is a surface plasmon arising from the bulk, free carriers in these materials. This excitation dominates the spectral weight in the bosonic function of the surface χ '' ( q , ω ) at THz energy scales, and is themore » most likely origin of a quasiparticle dispersion kink observed in previous photoemission experiments. Our study suggests that the spin plasmon may mix with this other surface mode, calling for a more nuanced understanding of optical experiments in which the spin plasmon is reported to play a role« less

Surface collective modes in the topological insulators Bi 2Se 3 and Bi 0.5Sb 1.5Te 3-xSe x

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kogar, A.; Gu, G.; Vig, S.

In this study, we used low-energy, momentum-resolved inelastic electron scattering to study surface collective modes of the three-dimensional topological insulators Bi 2Se 3 and Bi 0.5Sb 1.5Te 3-xSe x. Our goal was to identify the “spin plasmon” predicted by Raghu and co-workers [Phys. Rev. Lett. 104, 116401 (2010)]. Instead, we found that the primary collective mode is a surface plasmon arising from the bulk, free carriers in these materials. This excitation dominates the spectral weight in the bosonic function of the surface χ''(q,ω) at THz energy scales, and is the most likely origin of a quasiparticle dispersion kink observed inmore » previous photoemission experiments. Our study suggests that the spin plasmon may mix with this other surface mode, calling for a more nuanced understanding of optical experiments in which the spin plasmon is reported to play a role.« less

Surface Collective Modes in the Topological Insulators Bi 2 Se 3 and Bi 0.5 Sb 1.5 Te 3 - x Se x

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kogar, A.; Vig, S.; Thaler, A.

We used low-energy, momentum-resolved inelastic electron scattering to study surface collective modes of the three-dimensional topological insulators Bi 2Se 3 and Bi 0.5Sb 1.5Te 3-xSe x . Our goal was to identify the “spin plasmon” predicted by Raghu and co-workers [Phys. Rev. Lett. 104, 116401 (2010)]. Instead, we found that the primary collective mode is a surface plasmon arising from the bulk, free carriers in these materials. This excitation dominates the spectral weight in the bosonic function of the surface χ '' ( q , ω ) at THz energy scales, and is the most likely origin of a quasiparticlemore » dispersion kink observed in previous photoemission experiments. Our study suggests that the spin plasmon may mix with this other surface mode, calling for a more nuanced understanding of optical experiments in which the spin plasmon is reported to play a role.« less

Surface collective modes in the topological insulators Bi 2Se 3 and Bi 0.5Sb 1.5Te 3-xSe x

DOE PAGES

Kogar, A.; Gu, G.; Vig, S.; ...

2015-12-15

In this study, we used low-energy, momentum-resolved inelastic electron scattering to study surface collective modes of the three-dimensional topological insulators Bi 2Se 3 and Bi 0.5Sb 1.5Te 3-xSe x. Our goal was to identify the “spin plasmon” predicted by Raghu and co-workers [Phys. Rev. Lett. 104, 116401 (2010)]. Instead, we found that the primary collective mode is a surface plasmon arising from the bulk, free carriers in these materials. This excitation dominates the spectral weight in the bosonic function of the surface χ''(q,ω) at THz energy scales, and is the most likely origin of a quasiparticle dispersion kink observed inmore » previous photoemission experiments. Our study suggests that the spin plasmon may mix with this other surface mode, calling for a more nuanced understanding of optical experiments in which the spin plasmon is reported to play a role.« less

Robust broad spectral photodetection (UV-NIR) and ultra high responsivity investigated in nanosheets and nanowires of Bi2Te3 under harsh nano-milling conditions.

PubMed

Sharma, Alka; Srivastava, A K; Senguttuvan, T D; Husale, Sudhir

2017-12-20

Due to miniaturization of device dimensions, the next generation's photodetector based devices are expected to be fabricated from robust nanostructured materials. Hence there is an utmost requirement of investigating exotic optoelectronic properties of nanodevices fabricated from new novel materials and testing their performances at harsh conditions. The recent advances on 2D layered materials indicate exciting progress on broad spectral photodetection (BSP) but still there is a great demand for fabricating ultra-high performance photodetectors made from single material sensing broad electromagnetic spectrum since the detection range 325 nm-1550 nm is not covered by the conventional Si or InGaAs photodetectors. Alternatively, Bi 2 Te 3 is a layered material, possesses exciting optoelectronic, thermoelectric, plasmonics properties. Here we report robust photoconductivity measurements on Bi 2 Te 3 nanosheets and nanowires demonstrating BSP from UV to NIR. The nanosheets of Bi 2 Te 3 show the best ultra-high photoresponsivity (~74 A/W at 1550 nm). Further these nanosheets when transform into nanowires using harsh FIB milling conditions exhibit about one order enhancement in the photoresponsivity without affecting the performance of the device even after 4 months of storage at ambient conditions. An ultra-high photoresponsivity and BSP indicate exciting robust nature of topological insulator based nanodevices for optoelectronic applications.

High-pressure Seebeck coefficients and thermoelectric behaviors of Bi and PbTe measured using a Paris-Edinburgh cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baker, Jason; Kumar, Ravhi S.; Park, Changyong

2016-01-01

A new sample cell assembly design for the Paris-Edinburgh type large-volume press for simultaneous measurements of X-ray diffraction, electrical resistance, Seebeck coefficient and relative changes in the thermal conductance at high pressures has been developed. The feasibility of performing in situ measurements of the Seebeck coefficient and thermal measurements is demonstrated by observing well known solid–solid phase transitions of bismuth (Bi) up to 3 GPa and 450 K. A reversible polarity flip has been observed in the Seebeck coefficient across the Bi-I to Bi-II phase boundary. Also, successful Seebeck coefficient measurements have been performed for the classical high-temperature thermoelectric materialmore » PbTe under high pressure and temperature conditions. In addition, the relative change in the thermal conductivity was measured and a relative change in ZT, the dimensionless figure of merit, is described. Furthermore, this new capability enables pressure-induced structural changes to be directly correlated to electrical and thermal properties.« less

High-pressure Seebeck coefficients and thermoelectric behaviors of Bi and PbTe measured using a Paris-Edinburgh cell.

PubMed

Baker, Jason; Kumar, Ravhi; Park, Changyong; Kenney-Benson, Curtis; Cornelius, Andrew; Velisavljevic, Nenad

2016-11-01

A new sample cell assembly design for the Paris-Edinburgh type large-volume press for simultaneous measurements of X-ray diffraction, electrical resistance, Seebeck coefficient and relative changes in the thermal conductance at high pressures has been developed. The feasibility of performing in situ measurements of the Seebeck coefficient and thermal measurements is demonstrated by observing well known solid-solid phase transitions of bismuth (Bi) up to 3 GPa and 450 K. A reversible polarity flip has been observed in the Seebeck coefficient across the Bi-I to Bi-II phase boundary. Also, successful Seebeck coefficient measurements have been performed for the classical high-temperature thermoelectric material PbTe under high pressure and temperature conditions. In addition, the relative change in the thermal conductivity was measured and a relative change in ZT, the dimensionless figure of merit, is described. This new capability enables pressure-induced structural changes to be directly correlated to electrical and thermal properties.

Synthesis, structural, thermal and optical properties of TeO2-Bi2O3-GeO2-Li2O glasses

NASA Astrophysics Data System (ADS)

Dimowa, Louiza; Piroeva, Iskra; Atanasova-Vladimirova, S.; Petrova, Nadia; Ganev, Valentin; Titorenkova, Rositsa; Yankov, Georgi; Petrov, Todor; Shivachev, Boris L.

2016-10-01

In this study, synthesis and characterization of novel quaternary tellurite glass system TeO2-Bi2O3-GeO2-Li2O is presented. The compositions include TeO2 and GeO2 as glass formers while different proportion of Bi2O3 and Li2O act as network modifiers. Differential thermal analysis, X-ray diffraction, scanning electron microscopy energy dispersive X-ray spectroscopy, laser ablation inductively coupled plasma mass spectrometry, UV-Vis and Raman spectroscopy are applied to study the structural, thermal and optical properties of the studied glasses. Obtained glasses possess a relatively low glass transition temperature (around 300 °C) if compared to other tellurite glasses, show good thermal transparency in the visible and near infra-red (from 2.4 to 0.4 μm) and can double the frequency of laser light from its original wavelength of 1064 nm to its second-harmonic at 532 nm (i.e. second harmonic generation).

Microscopic effects of Dy doping in the topological insulator Bi2Te3

NASA Astrophysics Data System (ADS)

Duffy, L. B.; Steinke, N.-J.; Krieger, J. A.; Figueroa, A. I.; Kummer, K.; Lancaster, T.; Giblin, S. R.; Pratt, F. L.; Blundell, S. J.; Prokscha, T.; Suter, A.; Langridge, S.; Strocov, V. N.; Salman, Z.; van der Laan, G.; Hesjedal, T.

2018-05-01

Magnetic doping with transition metal ions is the most widely used approach to break time-reversal symmetry in a topological insulator (TI)—a prerequisite for unlocking the TI's exotic potential. Recently, we reported the doping of Bi2Te3 thin films with rare-earth ions, which, owing to their large magnetic moments, promise commensurately large magnetic gap openings in the topological surface states. However, only when doping with Dy has a sizable gap been observed in angle-resolved photoemission spectroscopy, which persists up to room temperature. Although disorder alone could be ruled out as a cause of the topological phase transition, a fundamental understanding of the magnetic and electronic properties of Dy-doped Bi2Te3 remained elusive. Here, we present an x-ray magnetic circular dichroism, polarized neutron reflectometry, muon-spin rotation, and resonant photoemission study of the microscopic magnetic and electronic properties. We find that the films are not simply paramagnetic but that instead the observed behavior can be well explained by the assumption of slowly fluctuating, inhomogeneous, magnetic patches with increasing volume fraction as the temperature decreases. At liquid helium temperatures, a large effective magnetization can be easily introduced by the application of moderate magnetic fields, implying that this material is very suitable for proximity coupling to an underlying ferromagnetic insulator or in a heterostructure with transition-metal-doped layers. However, the introduction of some charge carriers by the Dy dopants cannot be excluded at least in these highly doped samples. Nevertheless, we find that the magnetic order is not mediated via the conduction channel in these samples and therefore magnetic order and carrier concentration are expected to be independently controllable. This is not generally the case for transition-metal-doped topological insulators, and Dy doping should thus allow for improved TI quantum devices.

Effect of Substitutional Pb Doping on Bipolar and Lattice Thermal Conductivity in p-Type Bi0.48Sb1.52Te3

PubMed Central

Kim, Hyun-sik; Lee, Kyu Hyoung; Yoo, Joonyeon; Youn, Jehun; Roh, Jong Wook; Kim, Sang-il; Kim, Sung Wng

2017-01-01

Cation substitutional doping is an effective approach to modifying the electronic and thermal transports in Bi2Te3-based thermoelectric alloys. Here we present a comprehensive analysis of the electrical and thermal conductivities of polycrystalline Pb-doped p-type bulk Bi0.48Sb1.52Te3. Pb doping significantly increased the electrical conductivity up to ~2700 S/cm at x = 0.02 in Bi0.48-xPbxSb1.52Te3 due to the increase in hole carrier concentration. Even though the total thermal conductivity increased as Pb was added, due to the increased hole carrier concentration, the thermal conductivity was reduced by 14–22% if the contribution of the increased hole carrier concentration was excluded. To further understand the origin of reduction in the thermal conductivity, we first estimated the contribution of bipolar conduction to thermal conductivity from a two-parabolic band model, which is an extension of the single parabolic band model. Thereafter, the contribution of additional point defect scattering caused by Pb substitution (Pb in the cation site) was analyzed using the Debye–Callaway model. We found that Pb doping significantly suppressed both the bipolar thermal conduction and lattice thermal conductivity simultaneously, while the bipolar contribution to the total thermal conductivity reduction increased at high temperatures. At Pb doping of x = 0.02, the bipolar thermal conductivity decreased by ~30% from 0.47 W/mK to 0.33 W/mK at 480 K, which accounts for 70% of the total reduction. PMID:28773118

Photovoltaic effect in Bi{sub 2}TeO{sub 5} photorefractive crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oliveira, Ivan de, E-mail: ivan@ft.unicamp.brg; Capovilla, Danilo Augusto; Carvalho, Jesiel F.

2015-10-12

We report on the presence of a strong photovoltaic effect on nominally undoped photorefractive Bi{sub 2}TeO{sub 5} crystals and estimated their Glass photovoltaic constant and photovoltaic field for λ = 532 nm illumination. We directly measured the photovoltaic-based photocurrent in this material under λ = 532 nm wavelength laser light illumination and compared its behavior with that of a well known photovoltaic Fe-doped Lithium Niobate crystal. We also show the photovoltaic current to strongly depend on the polarization direction of light. Holographic diffraction efficiency oscillation during recording and the behavior of fringe-locked running holograms in self-stabilized experiments are also demonstrated here as additional indirect proofs ofmore » the photovoltaic nature of this material.« less

Effect of annealing on the optical properties of amorphous Se79Te10Sb4Bi7 thin films

NASA Astrophysics Data System (ADS)

Nyakotyo, H.; Sathiaraj, T. S.; Muchuweni, E.

2017-07-01

Thin films of Se79Te10Sb4Bi7, were prepared by Electron beam deposition technique. The structure of the as-prepared and annealed films has been studied by X-ray diffraction and the surface morphology by the scanning electron microscope (SEM). These studies show that there is a gradual change in structure and the formation of some polycrystalline structures in the amorphous phases is observed when the Se79Te10Sb4Bi7 film is annealed in the temperature range of 333-393 K. The optical transmission of these films has been studied as a function of photon wavelength in the range 300-2500 nm. It has been found that the optical band gap Egopt decreased with increasing annealing temperature in the range 333-393 K. The Urbach energy (Eu), optical conductivity (σopt), imaginary (εi), and real (εr) parts of the complex dielectric constant (ε) and lattice dielectric constant (εL) were also determined. The changes noticed in optical parameters with increasing annealing temperature were explained on the basis of structural relaxation as well as change in defect states and density of localized states due to amorphous-crystalline transformation.

Effect of graphene nanofillers on the enhanced thermoelectric properties of Bi2Te3 nanosheets: elucidating the role of interface in de-coupling the electrical and thermal characteristics

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Singh, Simrjit; Dhawan, Punit Kumar; Yadav, R. R.; Khare, Neeraj

2018-04-01

In this report, we investigate the effect of graphene nanofillers on the thermoelectric properties of Bi2Te3 nanosheets and demonstrate the role of interface for enhancing the overall figure of merit (ZT) ∼ 53%. The enhancement in the ZT is obtained due to an increase in the electrical conductivity (∼111%) and decrease in the thermal conductivity (∼12%) resulting from increased conducting channels and phonon scattering, respectively at the interfaces between graphene and Bi2Te3 nanosheets. A detailed analysis of the thermal conductivity reveals ∼4 times decrease in the lattice thermal conductivity in contrast to ∼2 times increase in the electronic thermal conductivity after the addition of graphene. Kelvin probe measurements have also been carried which reveals presence of low potential barrier at the interface between graphene and Bi2Te3 nanosheets which assist the flow of charge carriers thereby, increasing the mobility of the carriers. Thus, our results reveals a significant decrease in the lattice thermal conductivity (due to the formation of interfaces) and increase in the electron mobility (due to conducting paths at the interfaces) strongly participate in deciding observed enhancement in the thermoelectric figure of merit.

Effect of graphene nanofillers on the enhanced thermoelectric properties of Bi2Te3 nanosheets: elucidating the role of interface in de-coupling the electrical and thermal characteristics.

PubMed

Kumar, Sunil; Singh, Simrjit; Dhawan, Punit Kumar; Yadav, R R; Khare, Neeraj

2018-04-03

In this report, we investigate the effect of graphene nanofillers on the thermoelectric properties of Bi 2 Te 3 nanosheets and demonstrate the role of interface for enhancing the overall figure of merit (ZT) ∼ 53%. The enhancement in the ZT is obtained due to an increase in the electrical conductivity (∼111%) and decrease in the thermal conductivity (∼12%) resulting from increased conducting channels and phonon scattering, respectively at the interfaces between graphene and Bi 2 Te 3 nanosheets. A detailed analysis of the thermal conductivity reveals ∼4 times decrease in the lattice thermal conductivity in contrast to ∼2 times increase in the electronic thermal conductivity after the addition of graphene. Kelvin probe measurements have also been carried which reveals presence of low potential barrier at the interface between graphene and Bi 2 Te 3 nanosheets which assist the flow of charge carriers thereby, increasing the mobility of the carriers. Thus, our results reveals a significant decrease in the lattice thermal conductivity (due to the formation of interfaces) and increase in the electron mobility (due to conducting paths at the interfaces) strongly participate in deciding observed enhancement in the thermoelectric figure of merit.

Thermoelectric Properties of Cu-doped Bi0.4Sb1.6Te3 Prepared by Hot Extrusion

NASA Astrophysics Data System (ADS)

Jung, Woo-Jin; Kim, Il-Ho

2018-06-01

Cu0.003Bi0.4Sb1.6Te3 alloys were prepared by using encapsulated melting and hot extrusion (HE). The hot-extruded specimens had the relative average density of 98%. The ( 00l) planes were preferentially oriented parallel to the extrusion direction, but the specimens showed low crystallographic anisotropy with low orientation factors. The specimens were hot-extruded at 698 K, and they showed excellent mechanical properties with a Vickers hardness of 76 Hv and a bending strength of 59 MPa. However, as the HE temperature increased, the mechanical properties degraded due to grain growth. The hot-extruded specimens showed positive Seebeck coefficients, indicating that the specimens have p-type conduction. These specimens exhibited negative temperature dependences of electrical conductivity, and thus behaved as degenerate semiconductors. The Seebeck coefficient reached the maximum value at 373 K and then decreased with increasing temperature due to intrinsic conduction. Cu-doped specimens exhibited high power factors due to relatively higher electrical conductivities and Seebeck coefficients than those of undoped specimens. A thermal conductivity of 1.00 Wm-1 K-1 was obtained at 373 K for Cu0.003Bi0.4Sb1.6Te3 hot-extruded at 723 K. A maximum dimensionless figure of merit, ZT max = 1.05, and an average dimensionless figure of merit, ZT ave = 0.98, were achieved at 373 K.

Work function of bulk-insulating topological insulator Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takane, Daichi; Souma, Seigo; Center for Spintronics Research Network, Tohoku University, Sendai 980-8577

Recent discovery of bulk insulating topological insulator (TI) Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y} paved a pathway toward practical device application of TIs. For realizing TI-based devices, it is necessary to contact TIs with a metal. Since the band-bending at the interface dominates the character of devices, knowledge of TIs' work function is of essential importance. We have determined the compositional dependence of the work function in Bi{sub 2–x}Sb{sub x}Te{sub 3–y}Se{sub y} by high-resolution photoemission spectroscopy. The obtained work-function values (4.95–5.20 eV) track the energy shift of the surface chemical potential seen by angle-resolved photoemission spectroscopy. The present result serves as amore » useful guide for developing TI-based electronic devices.« less

The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped Sb{sub 2}Te{sub 3} and Bi{sub 2}Se{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kulbachinskii, V. A., E-mail: kulb@mig.phys.msu.ru; Kudryashov, A. A.; Kytin, V. G.

2015-06-15

The influence of doping with Tl on the Shubnikov-de Haas effect at T = 4.2 K in magnetic fields up to 38 T in p-Sb{sub 2−x}Tl{sub x}Te{sub 3} (x = 0, 0.005, 0.015, and 0.05) and n-Bi{sub 2−x}Tl{sub x}Se{sub 3} (x = 0, 0.01, 0.02, 0.04, and 0.06) single crystals is investigated. Extreme cross-sections of the Fermi surface in both materials decrease upon doping with Tl: the hole concentration decreases in Sb{sub 2−x}Tl{sub x}Te{sub 3} due to the donor effect of Tl and the electron concentration in n-Bi{sub 2−x}Tl{sub x}Se{sub 3} decreases due to the acceptor effect of Tl. Themore » temperature dependences of the Seebeck coefficient, electrical conductivity, thermal conductivity, and dimensionless thermoelectric figure of merit in a temperature range of 77–300 K are measured. The thermal conductivity and electrical conductivity decrease upon doping with Tl both in p-Sb{sub 2−x}Tl{sub x}Te{sub 3} and in n-Bi{sub 2−x}Tl{sub x}Se{sub 3}. The Seebeck coefficient increases in all compositions upon an increase in doping over the entire measured temperature range. The thermoelectric figure of merit increases upon doping with Tl.« less

Ultraviolet and visible range plasmonics in the topological insulator Bi1.5Sb0.5Te1.8Se1.2

NASA Astrophysics Data System (ADS)

Ou, Jun-Yu; So, Jin-Kyu; Adamo, Giorgio; Sulaev, Azat; Wang, Lan; Zheludev, Nikolay I.

2014-10-01

The development of metamaterials, data processing circuits and sensors for the visible and ultraviolet parts of the spectrum is hampered by the lack of low-loss media supporting plasmonic excitations. This has driven the intense search for plasmonic materials beyond noble metals. Here we show that the semiconductor Bi1.5Sb0.5Te1.8Se1.2, also known as a topological insulator, is also a good plasmonic material in the blue-ultraviolet range, in addition to the already-investigated terahertz frequency range. Metamaterials fabricated from Bi1.5Sb0.5Te1.8Se1.2 show plasmonic resonances from 350 to 550 nm, while surface gratings exhibit cathodoluminescent peaks from 230 to 1,050 nm. The observed plasmonic response is attributed to the combination of bulk charge carriers from interband transitions and surface charge carriers of the topological insulator. The importance of our result is in the identification of new mechanisms of negative permittivity in semiconductors where visible range plasmonics can be directly integrated with electronics.

High photon-to-heat conversion efficiency in the wavelength region of 250–1200 nm based on a thermoelectric Bi2Te3 film structure

PubMed Central

Hu, Er-Tao; Yao, Yuan; Zang, Kai-Yan; Liu, Xin-Xing; Jiang, An-Qing; Zheng, Jia-Jin; Yu, Ke-Han; Wei, Wei; Zheng, Yu-Xiang; Zhang, Rong-Jun; Wang, Song-You; Zhao, Hai-Bin; Yoshie, Osamu; Lee, Young-Pak; Wang, Cai-Zhuang; Lynch, David W.; Guo, Jun-Peng; Chen, Liang-Yao

2017-01-01

In this work, 4-layered SiO2/Bi2Te3/SiO2/Cu film structures were designed and fabricated and the optical properties investigated in the wavelength region of 250–1200 nm for their promising applications for direct solar-thermal-electric conversion. A typical 4-layered film sample with the structure SiO2 (66.6 nm)/Bi2Te3 (7.0 nm)/SiO2 (67.0 nm)/Cu (>100.0 nm) was deposited on a Si or K9-glass substrate by magnetron sputtering. The experimental results agree well with the simulated ones showing an average optical absorption of 96.5%, except in the shorter wavelength region, 250–500 nm, which demonstrates the superior absorption property of the 4-layered film due to the randomly rough surface of the Cu layer resulting from the higher deposition power. The high reflectance of the film structure in the long wavelength region of 2–20 μm will result in a low thermal emittance, 0.064 at 600 K. The simpler 4-layered structure with the thermoelectric Bi2Te3 used as the absorption layer may provide a straightforward way to obtain solar-thermal-electric conversion more efficiently through future study. PMID:28300178

Effect of thallium doping on the mobility of electrons in Bi{sub 2}Se{sub 3} and holes in Sb{sub 2}Te{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kudryashov, A. A.; Kytin, V. G.; Lunin, R. A.

2016-07-15

The Shubnikov–de Haas effect and the Hall effect in n-Bi{sub 2–x}Tl{sub x}Se{sub 3} (x = 0, 0.01, 0.02, 0.04) and p-Sb{sub 2–x}Tl{sub x}Te{sub 3} (x = 0, 0.005, 0.015, 0.05) single crystals are studied. The carrier mobilities and their changes upon Tl doping are calculated by the Fourier spectra of oscillations. It is found shown that Tl doping decreases the electron concentration in n-Bi{sub 2–x}Tl{sub x}Se{sub 3} and increases the electron mobility. In p-Sb{sub 2–x}Tl{sub x}Te{sub 3}, both the hole concentration and mobility decrease upon Tl doping. The change in the crystal defect concentration, which leads to these effects, ismore » discussed.« less

3D printing of shape-conformable thermoelectric materials using all-inorganic Bi2Te3-based inks

NASA Astrophysics Data System (ADS)

Kim, Fredrick; Kwon, Beomjin; Eom, Youngho; Lee, Ji Eun; Park, Sangmin; Jo, Seungki; Park, Sung Hoon; Kim, Bong-Seo; Im, Hye Jin; Lee, Min Ho; Min, Tae Sik; Kim, Kyung Tae; Chae, Han Gi; King, William P.; Son, Jae Sung

2018-04-01

Thermoelectric energy conversion offers a unique solution for generating electricity from waste heat. However, despite recent improvements in the efficiency of thermoelectric materials, the widespread application of thermoelectric generators has been hampered by challenges in fabricating thermoelectric materials with appropriate dimensions to perfectly fit heat sources. Herein, we report an extrusion-based three-dimensional printing method to produce thermoelectric materials with geometries suitable for heat sources. All-inorganic viscoelastic inks were synthesized using Sb2Te3 chalcogenidometallate ions as inorganic binders for Bi2Te3-based particles. Three-dimensional printed materials with various geometries showed homogenous thermoelectric properties, and their dimensionless figure-of-merit values of 0.9 (p-type) and 0.6 (n-type) were comparable to the bulk values. Conformal cylindrical thermoelectric generators made of 3D-printed half rings mounted on an alumina pipe were studied both experimentally and computationally. Simulations show that the power output of the conformal, shape-optimized generator is higher than that of conventional planar generators.

Quantum oscillations in a topological insulator Bi2Te2Se with large bulk resistivity (6 Ω cm)

NASA Astrophysics Data System (ADS)

Xiong, Jun; Petersen, A. C.; Qu, Dongxia; Hor, Y. S.; Cava, R. J.; Ong, N. P.

2012-02-01

We report the observation of prominent Shubnikov-de Haas oscillations in a Topological Insulator, Bi2Te2Se, with large bulk resistivity (6 Ω cm at 4 K). By fitting the SdH oscillations, we infer a large metallicity parameter kFℓ=41, with a surface mobility (μs∼2800 cm2/V s) much larger than the bulk mobility (μb∼50 cm2/V s). The plot of the index fields Bν vs. filling factor ν shows a {1}/{2}-shift, consistent with massless, Dirac states.

Structure of Profiled Crystals Based on Solid Solutions of Bi2Te3 and Their X-Ray Diagnostics

NASA Astrophysics Data System (ADS)

Voronin, A. I.; Bublik, V. T.; Tabachkova, N. Yu.; Belov, Yu. M.

2011-05-01

In this work, we used x-ray structural diagnostic data to reveal the formation of structural regularities in profiled polycrystalline ingots based on Bi and Sb chalcogenide solid solutions. In Bi2Te3 lattice crystals, the solid phase grows such that the cleavage surfaces are perpendicular to the crystallization front. The crystallization singularity determines the nature of the growth texture. Because texture is an important factor determining the anisotropy of properties, which in turn determines the suitability of an ingot for production of modules and the possibility of figure of merit improvement, its diagnostics is an important issue for technology testing. Examples of texture analysis using the method of straight pole figure (SPF) construction for profiled crystals are provided. The structure of the surface layers in the profiled ingots was studied after electroerosion cutting. In addition, the method of estimation of the disturbed layer depth based on the nature of texture changes was used.

Influence of Doping and Nanostructuration on n-Type Bi2(Te0.8Se0.2)3 Alloys Synthesized by Arc Melting

NASA Astrophysics Data System (ADS)

Gharsallah, Mouna; Serrano-Sanchez, Federico; Nemes, Norbert M.; Martinez, Jose Luis; Alonso, Jose Antonio

2017-01-01

In competitive thermoelectric devices for energy conversion and generation, high-efficiency materials of both n-type and p-type are required. For this, Bi2Te3-based alloys have the best thermoelectric properties in room temperature applications. Partial replacement of tellurium by selenium is expected to introduce new donor states in the band gap, which would alter electrical conductivity and thermopower. We report on the preparation of n-type Bi2(Te1-xSex)3 solid solutions by a straightforward arc-melting technique, yielding nanostructured polycrystalline pellets. X-ray and neutron powder diffraction was used to assess Se inclusion, also indicating that the interactions between quintuple layers constituting this material are weakened upon Se doping, while the covalency of intralayer bonds is augmented. Moreover, scanning electron microscopy shows large surfaces perpendicular to the c crystallographic axis assembled as stacked sheets. Grain boundaries related to this 2D nanostructuration affect the thermal conductivity reducing it below 0.8 Wm-1K-1 at room temperature. Furthermore, Se doping increases the absolute Seebeck coefficient up to -140 μV K-1 at 400 K, which is also beneficial for improved thermoelectric efficiency.

Intense upconversion luminescence and effect of local environment for Tm3+/Yb3+ co-doped novel TeO2-BiCl3 glass system.

PubMed

Wang, Guonian; Dai, Shixun; Zhang, Junjie; Wen, Lei; Yang, Jianhu; Jiang, Zhonghong

2006-05-15

We present the results of a study that uses theoretical and experimental methods to investigate the characteristics of the upconversion luminescence of Tm3+/Yb3+ codoped TeO2-BiCl3 glass system as a function of the BiCl3 fraction. These glasses are potentially important in the design of upconversion fiber lasers. Effect of local environment around Tm3+ on upconversion fluorescence intensity was analyzed by theoretical calculations. The structure and spectroscopic properties were investigated in the experiments by measuring the Raman spectra, IR transmission spectra, and absorption and fluorescence intensities at room temperature. The results indicate that blue luminescence quantum efficiency increases with increasing BiCl3 content from 10 to 60 mol%, which were interpreted by the increase of asymmetry of glass structure, decrease of phonon energy and removing of OH- groups.

Faraday Rotation Due to Surface States in the Topological Insulator (Bi1-xSbx)2Te3.

PubMed

Shao, Yinming; Post, Kirk W; Wu, Jhih-Sheng; Dai, Siyuan; Frenzel, Alex J; Richardella, Anthony R; Lee, Joon Sue; Samarth, Nitin; Fogler, Michael M; Balatsky, Alexander V; Kharzeev, Dmitri E; Basov, D N

2017-02-08

Using magneto-infrared spectroscopy, we have explored the charge dynamics of (Bi,Sb) 2 Te 3 thin films on InP substrates. From the magneto-transmission data we extracted three distinct cyclotron resonance (CR) energies that are all apparent in the broad band Faraday rotation (FR) spectra. This comprehensive FR-CR data set has allowed us to isolate the response of the bulk states from the intrinsic surface states associated with both the top and bottom surfaces of the film. The FR data uncovered that electron- and hole-type Dirac Fermions reside on opposite surfaces of our films, which paves the way for observing many exotic quantum phenomena in topological insulators.

Electrical and photoresponse properties of vacuum deposited Si/Al:ZnSe and Bi:ZnTe/Al:ZnSe photodiodes

NASA Astrophysics Data System (ADS)

Rao, Gowrish K.

2017-04-01

The paper reports fabrication and characterization of Bi:ZnTe/Al:ZnSe and Si/Al:ZnSe thin film photodiodes. The characteristics of the devices were studied under dark and illuminated conditions. The normalized spectral response, speed of photoresponse and variation of photocurrent with power density were studied in detail. Many vital parameters, such as diode ideality factor, barrier height, the thickness of the depletion region, trap depth, rise and decay times of photocurrent, were determined. Conduction mechanism in the photodiodes is discussed with the help of widely accepted theoretical models.

Linear magneto-resistance in Bi{sub 2}SeTe{sub 2} topological insulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amaladass, E. P., E-mail: edward@igcar.gov.in; Sharma, Shilpam; Devidas, T. R.

2016-05-23

Magnetic field and temperature dependent electronic transport measurements have been carried out on Bi{sub 2}SeTe{sub 2} topological insulator single crystals. The measurements reveal an insulating behavior and the carriers were found to be electrons (n-type) from Hall measurement. Magneto-resistance (MR) measurements in the field range (B) of 15 T to -15 T carried out at 4.2 K showed a cusp like weak anti-localization behavior for lower fields (-5 T 5 T. Upon increasing temperature, MR transforms to linear dependence of B at 40, 50 and 100 K. On further increasing temperatures (> 200 K), a parabolic MR is observed. Temperaturemore » dependent Hall data also showed a transition from a nonlinear to linear behavior upon increasing temperatures. Disorder induced changes in the electronic transport characteristics of bulk and surface electrons are believed to cause such changes in the magneto-transport behavior of this system.« less

Influence of Composition on the Thermoelectric Properties of Bi1- x Sb x Thin Films

NASA Astrophysics Data System (ADS)

Rogacheva, E. I.; Nashchekina, O. N.; Orlova, D. S.; Doroshenko, A. N.; Dresselhaus, M. S.

2017-07-01

Bi1- x Sb x solid solutions have attracted much attention as promising thermoelectric (TE) materials for cooling devices at temperatures below ˜200 K and as unique model materials for solid-state science because of a high sensitivity of their band structure to changes in composition, temperature, pressure, etc. Earlier, we revealed a non-monotonic behavior of the concentration dependences of TE properties for polycrystalline Bi1- x Sb x solid solutions and attributed these anomalies to percolation effects in the solid solution, transition to a gapless state, and to a semimetal-semiconductor transition. The goal of the present work is to find out whether the non-monotonic behavior of the concentration dependences of TE properties is observed in the thin film state as well. The objects of the study are Bi1- x Sb x thin films with thicknesses in the range d = 250-300 nm prepared by thermal evaporation of Bi1- x Sb x crystals ( x = 0-0.09) onto mica substrates. It was shown that the anomalies in the dependence of the TE properties on Bi1- x Sb x crystal composition are reproduced in thin films.

Theoretical study of ZnS/CdS bi-layer for thin-film CdTe solar cell

NASA Astrophysics Data System (ADS)

Mohamed, H. A.; Mohamed, A. S.; Ali, H. M.

2018-05-01

The performance of CdTe solar cells is strongly limited by the thickness of CdS window layer. A higher short-circuit current density might be achieved by decreasing the thickness of CdS layer as a result of reducing the absorption losses that take place in this layer. However, it is difficult to obtain uniform and pin-hole free CdS layers thinner than 50 nm. This problem can be solved through increasing the band gap of the window layer by adding a wide band gap semiconductor such as ZnS. In this work, bi-layer ZnS/CdS film was studied as an improved window layer of ITO/ZnS/CdS/CdTe solar cell. The total thickness of ZnS/CdS layer was taken about 60 nm. The effect of optical losses due to reflection at different interfaces in the cell and absorption in ITO, ZnS, CdS as well as the recombination loss have been studied. Finally, the effects of the recombination losses in the space-charge region and the reflectivity from the back contact were taken into accounts. The results revealed that the optical losses of 23% were achieved at 60 nm thickness of CdS and theses losses minimized to 18% when ZnS layer of 30 nm thickness was added to CdS layer. The minimum optical and recombination losses of about 26% were obtained at 1 ns of electron life-time and ∼0.4 μm width of the space-charge region. The maximum efficiency of 18.5% was achieved for ITO/CdS/CdTe cell and the efficiency increased up to 20% for ITO/ZnS/CdS/CdTe cell.

Angle-resolved and core-level photoemission study of interfacing the topological insulator Bi1.5Sb0.5Te1.7Se1.3 with Ag, Nb, and Fe

NASA Astrophysics Data System (ADS)

de Jong, N.; Frantzeskakis, E.; Zwartsenberg, B.; Huang, Y. K.; Wu, D.; Hlawenka, P.; Sańchez-Barriga, J.; Varykhalov, A.; van Heumen, E.; Golden, M. S.

2015-08-01

Interfaces between a bulk-insulating topological insulator (TI) and metallic adatoms have been studied using high-resolution, angle-resolved, and core-level photoemission. Fe, Nb, and Ag were evaporated onto Bi1 .5Sb0 .5Te1 .7Se1 .3 (BSTS) surfaces both at room temperature and 38 K. The coverage and temperature dependence of the adsorption and interfacial formation process have been investigated, highlighting the effects of the overlayer growth on the occupied electronic structure of the TI. For all coverages at room temperature and for those equivalent to less than 0.2 monolayer at low temperature all three metals lead to a downward shift of the TI bands with respect to the Fermi level. At room temperature Ag appears to intercalate efficiently into the van der Waals gap of BSTS, accompanied by low-level substitution for the Te/Se atoms of the termination layer of the crystal. This Te/Se substitution with silver increases significantly for low temperature adsorption, and can even dominate the electrostatic environment of the Bi/Sb atoms in the BSTS near-surface region. On the other hand, Fe and Nb evaporants remain close to the termination layer of the crystal. On room temperature deposition, they initially substitute isoelectronically for Bi as a function of coverage, before substituting for Te/Se atoms. For low temperature deposition, Fe and Nb are too immobile for substitution processes and show a behavior consistent with clustering on the surface. For both Ag and Fe/Nb, these differing adsorption pathways still lead to the qualitatively similar and remarkable behavior for low temperature deposition that the chemical potential first moves downward (p -type dopant behavior) and then upward (n -type behavior) on increasing coverage.

Thermoelectric properties of PbTe with indium and bismuth secondary phase

NASA Astrophysics Data System (ADS)

Bali, A.; Chetty, R.; Mallik, R. C.

2016-06-01

Lead telluride (PbTe) with indium (In) and bismuth (Bi) as micrometer sized secondary phases dispersed throughout the bulk has been prepared by matrix encapsulation method. In and Bi are not found to substitute in PbTe as shown by Rietveld and room temperature Raman studies but are present as secondary phases. Increased values of temperature dependent electrical resistivity and Seebeck coefficient show the effect of interfaces on electronic transport. As expected, thermal conductivity is found to reduce on addition of secondary phases due to a reduced electronic contribution, further confirming that electron scattering at interfaces is more important than phonon scattering in such systems for thermoelectric properties. However, due to the reduction in the power factor of the In and Bi added samples from that of the parent PbTe, the overall thermoelectric figure of merit ( zT) does not increase beyond that of PbTe, for which the highest value of 0.7 is obtained at 778 K.

Room temperature giant and linear magnetoresistance in topological insulator Bi2Te3 nanosheets.

PubMed

Wang, Xiaolin; Du, Yi; Dou, Shixue; Zhang, Chao

2012-06-29

Topological insulators, a new class of condensed matter having bulk insulating states and gapless metallic surface states, have demonstrated fascinating quantum effects. However, the potential practical applications of the topological insulators are still under exploration worldwide. We demonstrate that nanosheets of a Bi(2)Te(3) topological insulator several quintuple layers thick display giant and linear magnetoresistance. The giant and linear magnetoresistance achieved is as high as over 600% at room temperature, with a trend towards further increase at higher temperatures, as well as being weakly temperature-dependent and linear with the field, without any sign of saturation at measured fields up to 13 T. Furthermore, we observed a magnetic field induced gap below 10 K. The observation of giant and linear magnetoresistance paves the way for 3D topological insulators to be useful for practical applications in magnetoelectronic sensors such as disk reading heads, mechatronics, and other multifunctional electromagnetic applications.

Thermal conductivity in Bi0.5Sb1.5Te3+x and the role of dense dislocation arrays at grain boundaries.

PubMed

Deng, Rigui; Su, Xianli; Zheng, Zheng; Liu, Wei; Yan, Yonggao; Zhang, Qingjie; Dravid, Vinayak P; Uher, Ctirad; Kanatzidis, Mercouri G; Tang, Xinfeng

2018-06-01

Several prominent mechanisms for reduction in thermal conductivity have been shown in recent years to improve the figure of merit for thermoelectric materials. Such a mechanism is a hierarchical all-length-scale architecturing that recognizes the role of all microstructure elements, from atomic to nano to microscales, in reducing (lattice) thermal conductivity. In this context, there have been recent claims of remarkably low (lattice) thermal conductivity in Bi 0.5 Sb 1.5 Te 3 that are attributed to seemingly ordinary grain boundary dislocation networks. These high densities of dislocation networks in Bi 0.5 Sb 1.5 Te 3 were generated via unconventional materials processing with excess Te (which formed liquid phase, thereby facilitating sintering), followed by spark plasma sintering under pressure to squeeze out the liquid. We reproduced a practically identical microstructure, following practically identical processing strategies, but with noticeably different (higher) thermal conductivity than that claimed before. We show that the resultant microstructure is anisotropic, with notable difference of thermal and charge transport properties across and along two orthonormal directions, analogous to anisotropic crystals. Thus, we believe that grain boundary dislocation networks are not the primary cause of enhanced ZT through reduction in thermal conductivity. Instead, we can reproduce the purported high ZT through a favorable but impractical and incorrect combination of thermal conductivity measured along the pressing direction of anisotropy while charge transport measured in the direction perpendicular to the anisotropic direction. We believe that our work underscores the need for consistency in charge and thermal transport measurements for unified and verifiable measurements of thermoelectric (and related) properties and phenomena.

Experimental and theoretical identification of a high-pressure polymorph of Ga{sub 2}S{sub 3} with α-Bi{sub 2}Te{sub 3}-type structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lai, Xiaojing; Zhu, Feng; Qin, Shan

Since the discovery of α-phase Bi{sub 2}Te{sub 3}, Sb{sub 2}Te{sub 3}, and Bi{sub 2}Se{sub 3} as 3D topological insulators, many experimental and theoretical studies of A{sub 2}B{sub 3}-type chalcogenides have been performed to search for new materials with interesting elastic and electric properties at ambient and extreme conditions. In this study, high-pressure properties of Ga{sub 2}S{sub 3} have been characterized by in situ synchrotron X-ray diffraction (XRD), X-ray absorption near edge structure measurements, and Density-functional theory (DFT) calculations. At ∼16.0 GPa, a phase transition of α′-Ga{sub 2}S{sub 3} (Cc and Z = 4) is observed experimentally to a new polymorph, which is indentifiedmore » to be the tetradymite-type or α-Bi{sub 2}Te{sub 3}-type crystal structure (R3{sup ¯}m and Z = 3) by laser-annealing XRD experiments and DFT calculations. The isothermal pressure-volume relationship of Ga{sub 2}S{sub 3} is well described by the second-order Birch-Murnaghan equation of state with K{sub 0} = 59(2) GPa and K{sub 0}{sup ′} = 4 (fixed) for the α′-Ga{sub 2}S{sub 3}, and K{sub 0} = 91(3) GPa, and K{sub 0}{sup ′} = 4 (fixed) for the tetradymite-type phase. In addition, band gap of α′-Ga{sub 2}S{sub 3} decreases on compression and the tetradymite-type Ga{sub 2}S{sub 3} exhibits metallization based on DFT calculations. The pressure-induced phase transition accompanying by changes of elastic and electrical properties may give some implications to other chalcogenides under high pressure.« less

Chemical potential fluctuations in topological insulator (Bi0.5Sb0.5)2Te3-films visualized by photocurrent spectroscopy

NASA Astrophysics Data System (ADS)

Kastl, Christoph; Seifert, Paul; He, Xiaoyue; Wu, Kehui; Li, Yongqing; Holleitner, Alexander

2015-06-01

We investigate the photocurrent properties of the topological insulator (Bi0.5Sb0.5)2Te3 on SrTiO3-substrates. We find reproducible, submicron photocurrent patterns generated by long-range chemical potential fluctuations, occurring predominantly at the topological insulator/substrate interface. We fabricate nano-plowed constrictions which comprise single potential fluctuations. Hereby, we can quantify the magnitude of the disorder potential to be in the meV range. The results further suggest a dominating photo-thermoelectric current generated in the surface states in such nanoscale constrictions.

Thermoelectric Properties and Hall Effect of Bi2Te3-xSex Polycrystalline Materials Prepared by a Hot Press Method

NASA Astrophysics Data System (ADS)

Yashima, Isamu; Watanave, Hiroshi; Ogisu, Takayasu; Tsukuda, Ryouma; Sato, Susumu

1998-05-01

Bi2Te3-xSex (0≦x<1) polycrystalline solids are prepared by a hot press method and their thermoelectric properties are studied. The samples show the maximum value of Z = 2.3×10-3 K-1 at x=0.22. The lattice thermal conductivity is smaller than that of a single crystal. The lattice constant and power factor decrease upon increasing the selenium substitution while thermal conductivity decreases for x values up to 0.33 and becomes constant for x values greater than 0.33.

Thermoelectric efficiency of (1 - x)(GeTe) x(Bi2Se0.2Te2.8) and implementation into highly performing thermoelectric power generators.

PubMed

Koenig, J; Winkler, M; Dankwort, T; Hansen, A-L; Pernau, H-F; Duppel, V; Jaegle, M; Bartholomé, K; Kienle, L; Bensch, W

2015-02-14

Here we report for the first time on a complete simulation assisted "material to module" development of a high performance thermoelectric generator (TEG) based on the combination of a phase change material and established thermoelectrics yielding the compositions (1 - x)(GeTe) x(Bi(2)Se(0.2)Te(2.8)). For the generator design our approach for benchmarking thermoelectric materials is demonstrated which is not restricted to the determination of the intrinsically imprecise ZT value but includes the implementation of the material into a TEG. This approach is enabling a much more reliable benchmarking of thermoelectric materials for TEG application. Furthermore we analyzed the microstructure and performance close to in-operandi conditions for two different compositions in order to demonstrate the sensitivity of the material against processing and thermal cycling. For x = 0.038 the microstructure of the as-prepared material remains unchanged, consequently, excellent and stable thermoelectric performance as prerequisites for TEG production was obtained. For x = 0.063 we observed strain phenomena for the pristine state which are released by the formation of planar defects after thermal cycling. Consequently the thermoelectric performance degrades significantly. These findings highlight a complication for deriving the correlation of microstructure and properties of thermoelectric materials in general.

Fabrication of Bi–Sb–Te Thermoelectric by Cold-Pressed Sintering for Motorcycle Exhaust.

PubMed

Kao, Mu-Jung; Chen, Ming-Jing

2017-04-01

This study was conducted on the Bi–Sb–Te thermoelectric material which is cold-pressed Sintering under 750 Mpa to make square thermoelectric pairs with size 8.2 mm × 8.2 mm and thicknesses 0.8 mm and 1.5 mm. The zone melting method was used to acquire P-type thermoelectric material Bi0.4Sb1.6Te3 and N-type thermoelectric material Bi2Te2.5Se0.5. At temperature 383 K, the measured Seebeck coefficient of Bi0.4Sb1.6Te3 is 222 μV/K, and its thermoelectric figure of merit ZT is 1.35. At temperature 400 K, the measured Seebeck coefficient of Bi2Te2.5Se0.5 is 210 μV/K, and its thermoelectric figure of merit ZT is 1.13. Using Solder paste Sn42Bi58 and copper electrode plate are in series connection with 16 pieces of P/N thermoelectric material to form thermoelectric modules. The thermoelectric module is actually pasted on the motorcycle waste heat source to be evaluated the performance, making the cold-end temperature dissipation heat can enhance the temperature difference between it so as to increase the output power. Increasing the leg thickness of thermoelectric module and making the about 35 °C temperature-difference of those can obviously enhance the performance of in terms of its voltage, its thermoelectric figure of merit ZT and output power of the thermoelectric modules.

Investigation of radiation shielding properties for MeO-PbCl2-TeO2 (MeO = Bi2O3, MoO3, Sb2O3, WO3, ZnO) glasses

NASA Astrophysics Data System (ADS)

Sayyed, M. I.; Çelikbilek Ersundu, M.; Ersundu, A. E.; Lakshminarayana, G.; Kostka, P.

2018-03-01

In this work, glasses in the MeO-PbCl2-TeO2 (MeO = Bi2O3, MoO3, Sb2O3, WO3, ZnO) system, which show a great potential for optoelectronic applications, were used to evaluate their resistance under high energy ionizing radiations. The basic shielding quantities for determining the penetration of radiation in glass, such as mass attenuation coefficient (μ/ρ), half value layer (HVL), mean free path (MFP) and exposure buildup factor (EBF) values were investigated within the energy range 0.015 MeV ‒ 15 MeV using XCOM program and variation of shielding parameters were compared with different glass systems and ordinary concrete. From the derived results, it was determined that MeO-PbCl2-TeO2 (MeO = Bi2O3, MoO3, Sb2O3, WO3, ZnO) glasses show great potentiality to be used under high energy radiations. Among the studied glass compositions, Bi2O3 and WO3 containing glasses were found to possess superior gamma-ray shielding effectiveness.

Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI

NASA Astrophysics Data System (ADS)

Ideue, T.; Checkelsky, J. G.; Bahramy, M. S.; Murakawa, H.; Kaneko, Y.; Nagaosa, N.; Tokura, Y.

2014-10-01

BiTeI is a polar semiconductor with gigantic Rashba spin-split bands in bulk. We have investigated the effect of pressure on the electronic structure of this material via magnetotransport. Periods of Shubunikov-de Haas (SdH) oscillations originating from the spin-split outer Fermi surface and inner Fermi surface show disparate responses to pressure, while the carrier number derived from the Hall effect is unchanged with pressure. The associated parameters which characterize the spin-split band structure are strongly dependent on pressure, reflecting the pressure-induced band deformation. We find the SdH oscillations and transport response are consistent with the theoretically proposed pressure-induced band deformation leading to a topological phase transition. Our analysis suggests the critical pressure for the quantum phase transition near Pc=3.5 GPa.

Highly Porous Thermoelectric Nanocomposites with LowThermalConductivityand High Figure of Merit from Large-Scale Solution-Synthesized Bi2Te2.5Se0.5HollowNanostructures

DOE PAGES

Xu, Biao; Ames Lab., Ames, IA; Feng, Tianli L.; ...

2017-01-12

In order to enhance the performance of thermoelectric materials and enable access to their widespread applications, it is beneficial yet challenging to synthesize hollow nanostructures in large quantities, with high porosity, low thermal conductivity (κ) and excellent figure of merit (z T). We report a scalable (ca. 11.0 g per batch) and low-temperature colloidal processing route for Bi 2Te 2.5Se 0.5 hollow nanostructures. They are sintered into porous, bulk nanocomposites (phi 10 mm×h 10 mm) with low κ (0.48 W m -1 K -1) and the highest z T (1.18) among state-of-the-art Bi 2Te 3-xSe x materilas. Additional benefits ofmore » the unprecedented low relative density (68–77 %) are the large demand reduction of raw materials and the improved portability. This method can be adopted to fabricate other porous phase-transition and thermoelectric chalcogenide materials and will pave the way for the implementation of hollow nanostructures in other fields.« less

Exploiting nonlinear properties of pure and Sn-doped Bi2Te2Se for passive Q-switching of all-polarization maintaining ytterbium- and erbium-doped fiber lasers.

PubMed

Bogusławski, Jakub; Kowalczyk, Maciej; Iwanowski, Przemysław; Hruban, Andrzej; Diduszko, Ryszard; Piotrowski, Kazimierz; Dybko, Krzysztof; Wojciechowski, Tomasz; Aleszkiewicz, Marta; Sotor, Jarosław

2017-08-07

Due to their broadband nonlinear optical properties, low-dimensional materials are widely used for pulse generation in fiber and solid-state lasers. Here we demonstrate novel materials, Bi 2 Te 2 Se (BTS) and Sn-doped Bi 2 Te 2 Se (BSTS), which can be used as a universal saturable absorbers for distinct spectral regimes. The material was mechanically exfoliated from a bulk single-crystal and deposited onto a side-polished fiber. We have performed characterization of the fabricated devices and employed them in polarization-maintaining ytterbium- and erbium-doped fiber lasers. This enabled us to obtain self-starting passively Q-switched regime at 1 µm and 1.56 µm. The oscillators emitted stable, linearly polarized radiation with the highest single pulse energy approaching 692 nJ. Both lasers are characterized by the best performance observed in all-polarization maintaining Q-switched fiber lasers with recently investigated new saturable absorbers, which was enabled by a very high damage threshold of the devices. This demonstrates the great potential of the investigated materials for the ultrafast photonics community.

Structural phase transitions in Bi2Se3 under high pressure

PubMed Central

Yu, Zhenhai; Wang, Lin; Hu, Qingyang; Zhao, Jinggeng; Yan, Shuai; Yang, Ke; Sinogeikin, Stanislav; Gu, Genda; Mao, Ho-kwang

2015-01-01

Raman spectroscopy and angle dispersive X-ray diffraction (XRD) experiments of bismuth selenide (Bi2Se3) have been carried out to pressures of 35.6 and 81.2 GPa, respectively, to explore its pressure-induced phase transformation. The experiments indicate that a progressive structural evolution occurs from an ambient rhombohedra phase (Space group (SG): R-3m) to monoclinic phase (SG: C2/m) and eventually to a high pressure body-centered tetragonal phase (SG: I4/mmm). Evidenced by our XRD data up to 81.2 GPa, the Bi2Se3 crystallizes into body-centered tetragonal structures rather than the recently reported disordered body-centered cubic (BCC) phase. Furthermore, first principles theoretical calculations favor the viewpoint that the I4/mmm phase Bi2Se3 can be stabilized under high pressure (>30 GPa). Remarkably, the Raman spectra of Bi2Se3 from this work (two independent runs) are still Raman active up to ~35 GPa. It is worthy to note that the disordered BCC phase at 27.8 GPa is not observed here. The remarkable difference in atomic radii of Bi and Se in Bi2Se3 may explain why Bi2Se3 shows different structural behavior than isocompounds Bi2Te3 and Sb2Te3. PMID:26522818

Structural phase transitions in Bi 2Se 3 under high pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Zhenhai; Gu, Genda; Wang, Lin

2015-11-02

Raman spectroscopy and angle dispersive X-ray diffraction (XRD) experiments of bismuth selenide (Bi 2Se 3) have been carried out to pressures of 35.6 and 81.2 GPa, respectively, to explore its pressure-induced phase transformation. The experiments indicate that a progressive structural evolution occurs from an ambient rhombohedra phase (Space group (SG): R-3m) to monoclinic phase (SG: C2/m) and eventually to a high pressure body-centered tetragonal phase (SG: I4/mmm). Evidenced by our XRD data up to 81.2 GPa, the Bi 2Se 3 crystallizes into body-centered tetragonal structures rather than the recently reported disordered body-centered cubic (BCC) phase. Furthermore, first principles theoretical calculationsmore » favor the viewpoint that the I4/mmm phase Bi 2Se 3 can be stabilized under high pressure (>30 GPa). Remarkably, the Raman spectra of Bi 2Se 3 from this work (two independent runs) are still Raman active up to ~35 GPa. Furthermore, it is worthy to note that the disordered BCC phase at 27.8 GPa is not observed here. The remarkable difference in atomic radii of Bi and Se in Bi 2Se 3 may explain why Bi 2Se 3 shows different structural behavior than isocompounds Bi 2Te 3 and Sb 2Te 3.« less

Substrate temperature effect on structural and optical properties of Bi2Te3 thin films

NASA Astrophysics Data System (ADS)

Jariwala, B. S.; Shah, D. V.; Kheraj, Vipul

2012-06-01

Structural and optical properties of Bi2Te3 thin films, thermally evaporated on well-cleaned glass substrates at different substrate temperatures, are reported here. X-ray diffraction was carried out for the structural characterization. XRD patterns of the films exhibit preferential orientation along the [0 1 5] direction for the films deposited at all the substrate temperatures together with other supported planes [2 0 5] & [1 1 0]. All other deposition conditions like thickness, deposition rate and pressure were maintained same throughout the experiment. X-ray diffraction lines confirm that the grown films are polycrystalline in nature with hexagonal crystal structure. The effect of substrate temperature on lattice constants, grain size, micro strain, number of crystallites and dislocation density have been investigated and reported in this paper. Also the substrate temperature effect on the optical property has been also investigated using the FTIR spectroscopy.

Synthesis and temperature dependent Raman studies of large crystalline faces topological GeBi4Te7 single crystal

NASA Astrophysics Data System (ADS)

Mal, Priyanath; Bera, G.; Turpu, G. R.; Srivastava, Sunil K.; Das, Pradip

2018-05-01

We present a study of structural and vibrational properties of topological insulator GeBi4Te7. Modified Bridgeman technique is employed to synthesize the single crystal with relatively large crystalline faces. Sharp (0 0 l) reflection confirms the high crystallinity of the single crystal. We have performed temperature dependent Raman measurement for both parallel and perpendicular to crystallographic c axis geometry. In parallel configuration we have observed seven Raman modes whereas in perpendicular geometry only four of these are identified. Appearance and disappearance of Raman modes having different intensities for parallel and perpendicular to c measurement attribute to the mode polarization. Progressive blue shift is observed with lowering temperature, reflects the increase in internal stress.

Thermoelectric and mechanical properties of multi-walled carbon nanotube doped Bi0.4Sb1.6Te3 thermoelectric material

NASA Astrophysics Data System (ADS)

Ren, Fei; Wang, Hsin; Menchhofer, Paul A.; Kiggans, James O.

2013-11-01

Since many thermoelectrics are brittle in nature with low mechanical strength, improving their mechanical properties is important to fabricate devices such as thermoelectric power generators and coolers. In this work, multiwalled carbon nanotubes (CNTs) were incorporated into polycrystalline Bi0.4Sb1.6Te3 through powder processing, which increased the flexural strength from 32 MPa to 90 MPa. Electrical and thermal conductivities were both reduced in the CNT containing materials, leading to unchanged figure of merit. Dynamic Young's and shear moduli of the composites were lower than the base material, while the Poisson's ratio was not affected by CNT doping.

Power generation from nanostructured PbTe-based thermoelectrics: comprehensive development from materials to modules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Xiaokai; Jood, Priyanka; Ohta, Michihiro

2016-01-01

In this work, we demonstrate the use of high performance nanostructured PbTe-based materials in high conversion efficiency thermoelectric modules. We fabricated the samples of PbTe-2% MgTe doped with 4% Na and PbTe doped with 0.2% PbI2 with high thermoelectric figure of merit (ZT) and sintered them with Co-Fe diffusion barriers for use as p- and n-type thermoelectric legs, respectively. Transmission electron microscopy of the PbTe legs reveals two shapes of nanostructures, disk-like and spherical. The reduction in lattice thermal conductivity through nanostructuring gives a ZT of similar to 1.8 at 810 K for p-type PbTe and similar to 1.4 atmore » 750 K for n-type PbTe. Nanostructured PbTe-based module and segmented-leg module using Bi2Te3 and nanostructured PbTe were fabricated and tested with hot-side temperatures up to 873 K in a vacuum. The maximum conversion efficiency of similar to 8.8% for a temperature difference (Delta T) of 570 K and B11% for a Delta T of 590 K have been demonstrated in the nanostructured PbTe-based module and segmented Bi2Te3/nanostructured PbTe module, respectively. Three-dimensional finite-element simulations predict that the maximum conversion efficiency of the nanostructured PbTe-based module and segmented Bi2Te3/nanostructured PbTe module reaches 12.2% for a Delta T of 570 K and 15.6% for a Delta T of 590 K respectively, which could be achieved if the electrical and thermal contact between the nanostructured PbTe legs and Cu interconnecting electrodes is further improved.« less

Highly Porous Thermoelectric Nanocomposites with Low Thermal Conductivity and High Figure of Merit from Large-Scale Solution-Synthesized Bi2 Te2.5 Se0.5 Hollow Nanostructures.

PubMed

Xu, Biao; Feng, Tianli; Agne, Matthias T; Zhou, Lin; Ruan, Xiulin; Snyder, G Jeffery; Wu, Yue

2017-03-20

To enhance the performance of thermoelectric materials and enable access to their widespread applications, it is beneficial yet challenging to synthesize hollow nanostructures in large quantities, with high porosity, low thermal conductivity (κ) and excellent figure of merit (z T). Herein we report a scalable (ca. 11.0 g per batch) and low-temperature colloidal processing route for Bi 2 Te 2.5 Se 0.5 hollow nanostructures. They are sintered into porous, bulk nanocomposites (phi 10 mm×h 10 mm) with low κ (0.48 W m -1  K -1 ) and the highest z T (1.18) among state-of-the-art Bi 2 Te 3-x Se x materilas. Additional benefits of the unprecedented low relative density (68-77 %) are the large demand reduction of raw materials and the improved portability. This method can be adopted to fabricate other porous phase-transition and thermoelectric chalcogenide materials and will pave the way for the implementation of hollow nanostructures in other fields. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigation of Optical Nonlinearities in Bi-Doped Se-Te Chalcogenide Thin Films

NASA Astrophysics Data System (ADS)

Yadav, Preeti; Sharma, Ambika

2015-03-01

The present paper reports the nonlinear optical properties of chalcogenide Se85- x Te15Bi x (0 ≤ x ≤ 5) thin films. The formulation proposed by Boling, Fournier, and Snitzer and Tichy and Ticha has been used to compute the nonlinear refractive index n 2. The two-photon absorption coefficient β 2, and first- and third-order susceptibilities [ χ (1) and χ (3)] are also reported. The nonlinear refractive index n 2 is well correlated with the linear refractive index n and Wemple-DiDomenico (WDD) parameters, in turn depending on the density ρ and molar volume V m of the system. The density of the system is calculated experimentally by using Archimedes' principle. The linear optical parameters, viz. n, WDD parameters, and optical bandgap E g, are measured experimentally using ellipsometric curves obtained by spectrophotometry. The composition-dependent behavior of n 2 is analyzed on the basis of various parameters, viz. density, bond distribution, cohesive energy (CE), and optical bandgap E g, of the system. The variation of n 2 and β 2 with changing bandgap E g is also reported. The values of n 2 and χ (3) of the investigated chalcogenides are compared with those of pure silica, oxide, and other Se-based glasses.

Spatial potential ripples of azimuthal surface modes in topological insulator Bi2Te3 nanowires

PubMed Central

Muñoz Rojo, Miguel; Zhang, Yingjie; Manzano, Cristina V.; Alvaro, Raquel; Gooth, Johannes; Salmeron, Miquel; Martin-Gonzalez, Marisol

2016-01-01

Topological insulators (TI) nanowires (NW) are an emerging class of structures, promising both novel quantum effects and potential applications in low-power electronics, thermoelectrics and spintronics. However, investigating the electronic states of TI NWs is complicated, due to their small lateral size, especially at room temperature. Here, we perform scanning probe based nanoscale imaging to resolve the local surface potential landscapes of Bi2Te3 nanowires (NWs) at 300 K. We found equipotential rings around the NWs perimeter that we attribute to azimuthal 1D modes. Along the NW axis, these modes are altered, forming potential ripples in the local density of states, due to intrinsic disturbances. Potential mapping of electrically biased NWs enabled us to accurately determine their conductivity which was found to increase with the decrease of NW diameter, consistent with surface dominated transport. Our results demonstrate that TI NWs can pave the way to both exotic quantum states and novel electronic devices. PMID:26751282

Spatial potential ripples of azimuthal surface modes in topological insulator Bi2Te3 nanowires.

PubMed

Muñoz Rojo, Miguel; Zhang, Yingjie; Manzano, Cristina V; Alvaro, Raquel; Gooth, Johannes; Salmeron, Miquel; Martin-Gonzalez, Marisol

2016-01-11

Topological insulators (TI) nanowires (NW) are an emerging class of structures, promising both novel quantum effects and potential applications in low-power electronics, thermoelectrics and spintronics. However, investigating the electronic states of TI NWs is complicated, due to their small lateral size, especially at room temperature. Here, we perform scanning probe based nanoscale imaging to resolve the local surface potential landscapes of Bi2Te3 nanowires (NWs) at 300 K. We found equipotential rings around the NWs perimeter that we attribute to azimuthal 1D modes. Along the NW axis, these modes are altered, forming potential ripples in the local density of states, due to intrinsic disturbances. Potential mapping of electrically biased NWs enabled us to accurately determine their conductivity which was found to increase with the decrease of NW diameter, consistent with surface dominated transport. Our results demonstrate that TI NWs can pave the way to both exotic quantum states and novel electronic devices.

Spatial potential ripples of azimuthal surface modes in topological insulator Bi 2Te 3 nanowires

DOE PAGES

Muñoz Rojo, Miguel; Zhang, Yingjie; Manzano, Cristina V.; ...

2016-01-11

Topological insulators (TI) nanowires (NW) are an emerging class of structures, promising both novel quantum effects and potential applications in low-power electronics, thermoelectrics and spintronics. However, investigating the electronic states of TI NWs is complicated, due to their small lateral size, especially at room temperature. Here, we perform scanning probe based nanoscale imaging to resolve the local surface potential landscapes of Bi 2Te 3 nanowires (NWs) at 300 K. We found equipotential rings around the NWs perimeter that we attribute to azimuthal 1D modes. Along the NW axis, these modes are altered, forming potential ripples in the local density ofmore » states, due to intrinsic disturbances. Potential mapping of electrically biased NWs enabled us to accurately determine their conductivity which was found to increase with the decrease of NW diameter, consistent with surface dominated transport. Finally, our results demonstrate that TI NWs can pave the way to both exotic quantum states and novel electronic devices.« less

Anisotropy analysis of thermoelectric properties of Bi{sub 2}Te{sub 2.9}Se{sub 0.1} prepared by SPS method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zybala, Rafal; Wojciechowski, Krzysztof T.

2012-06-26

The n-type Bi{sub 2}Te{sub 2.9}Se{sub 0.1} materials were synthesized by the direct fusion technique. The polycrystalline samples were fabricated by the uniaxial pressing of powders in spark plasma sintering (SPS) apparatus. The materials were subjected to the heat treatment in H{sub 2}-Ar atmosphere at 470 K for 24 h. The influence of preparation conditions on the anisotropy of electrical and thermal properties was thoroughly studied for the direction perpendicular and parallel to the pressing force. The microstructure and the chemical composition of both types of samples were examined using a scanning microscope (SEM) equipped with an X-ray energy dispersion detectormore » (EDX). The XRD method was applied for the phase analysis of materials, as well as, for determination of preferred orientation of Bi{sub 2}Te{sub 2.9}Se{sub 0.1} grains. The Seebeck coefficient distribution was studied by the scanning thermoelectric microprobe (STM). Temperature dependences of thermoelectric properties (thermal and electrical conductivities, Seebeck coefficient) were measured in the temperature from 300 K to 550 K. The statistical analysis of results has shown strong influence of pressing force direction both on structural and transport properties. The applied heat treatment of materials significantly improves their thermoelectric figure of merit. Particularly, it was found that annealing in H2-Ar atmosphere leads to enhancement of the ZT three times up to {approx}0.7 at 370 K in perpendicular direction to the pressing force.« less

Wide-range ideal 2D Rashba electron gas with large spin splitting in Bi2Se3/MoTe2 heterostructure

NASA Astrophysics Data System (ADS)

Wang, Te-Hsien; Jeng, Horng-Tay

2017-02-01

An application-expected ideal two-dimensional Rashba electron gas, i.e., nearly all the conduction electrons occupy the Rashba bands, is crucial for semiconductor spintronic applications. We demonstrate that such an ideal two-dimensional Rashba electron gas with a large Rashba splitting can be realized in a topological insulator Bi2Se3 ultrathin film grown on a transition metal dichalcogenides MoTe2 substrate through first-principle calculations. Our results show the Rashba bands exclusively over a very large energy interval of about 0.6 eV around the Fermi level within the MoTe2 semiconducting gap. Such a wide-range ideal two-dimensional Rashba electron gas with a large spin splitting, which is desirable for real devices utilizing the Rashba effect, has never been found before. Due to the strong spin-orbit coupling, the strength of the Rashba splitting is comparable with that of the heavy-metal surfaces such as Au and Bi surfaces, giving rise to a spin precession length as small as 10 nm. The maximum in-plane spin polarization of the inner (outer) Rashba band near the Γ point is about 70% (60%). The room-temperature coherence length is at least several times longer than the spin precession length, providing good coherency through the spin processing devices. The wide energy window for ideal Rashba bands, small spin precession length, as well as long spin coherence length in this two-dimensional topological insulator/transition metal dichalcogenides heterostructure pave the way for realizing an ultrathin nano-scale spintronic device such as the Datta-Das spin transistor at room-temperature.

High absorption coefficients of the CuSb(Se,Te)2 and CuBi(S,Se)2 alloys enable high-efficient 100 nm thin-film photovoltaics

NASA Astrophysics Data System (ADS)

Chen, Rongzhen; Persson, Clas

2017-06-01

We demonstrate that the band-gap energies Eg of CuSb(Se,Te)2 and CuBi(S,Se)2 can be optimized for high energy conversion in very thin photovoltaic devices, and that the alloys then exhibit excellent optical properties, especially for tellurium rich CuSb(Se1-xTex)2. This is explained by multi-valley band structure with flat energy dispersions, mainly due to the localized character of the Sb/Bi p-like conduction band states. Still the effective electron mass is reasonable small: mc ≈ 0.25m0 for CuSbTe2. The absorption coefficient α(ω) for CuSb(Se1-xTex)2 is at ħω = Eg + 1 eV as much as 5-7 times larger than α(ω) for traditional thin-film absorber materials. Auger recombination does limit the efficiency if the carrier concentration becomes too high, and this effect needs to be suppressed. However with high absorptivity, the alloys can be utilized for extremely thin inorganic solar cells with the maximum efficiency ηmax ≈ 25% even for film thicknesses d ≈ 50 - 150 nm, and the efficiency increases to ˜30% if the Auger effect is diminished.

Magneto-optical Kerr effect in Cr-doped (Bi,Sb)2Te3 Thin Films

NASA Astrophysics Data System (ADS)

Pan, Yu; Yao, Bing; Richardella, Anthony; Kandala, Abhinav; Fraleigh, Robert; Lee, Joon Sue; Samarth, Nitin; Yeats, Andrew; Awschalom, David D.

2014-03-01

When a three-dimensional (3D) topological insulator (TI) is interfaced with magnetism, the breaking of time reversal symmetry results in new phenomena such as the recently observed quantum anomalous Hall effect [C.-Z. Zhang et al., Science340, 167 (2013)]. Thus motivated, we use the polar-mode magneto-optical Kerr effect (MOKE) to probe the temperature- and field-dependent magnetization in molecular beam epitaxy grown Cr-doped thin films of the 3D TI (Bi,Sb)2Te3. Square MOKE hysteresis loops observed at low temperatures indicate robust ferromagnetism with a perpendicular magnetic anisotropy and Curie temperature that varies from ~ 5 K to ~ 150 K, depending on sample details. A key question is the nature of the ferromagnetism: is it a carrier-mediated mechanism, Van Vleck mechanism or due to extrinsic clusters? We address this issue by varying the magnetic ion concentration and carrier density via sample composition as well as by varying the chemical potential by back gating. Finally, we use spatially-resolved MOKE to image the magnetization in these samples. Supported by ONR and DARPA.

Faraday Rotation Due to Surface States in the Topological Insulator (Bi 1–xSbx) 2Te 3

DOE PAGES

Shao, Yinming; Post, Kirk W.; Wu, Jhih-Sheng; ...

2016-12-29

For this research, using magneto-infrared spectroscopy, we have explored the charge dynamics of (Bi,Sb) 2Te 3 thin films on InP substrates. From the magneto-transmission data we extracted three distinct cyclotron resonance (CR) energies that are all apparent in the broad band Faraday rotation (FR) spectra. This comprehensive FR-CR data set has allowed us to isolate the response of the bulk states from the intrinsic surface states associated with both the top and bottom surfaces of the film. Finally, the FR data uncovered that electron- and hole-type Dirac Fermions reside on opposite surfaces of our films, which paves the way formore » observing many exotic quantum phenomena in topological insulators.« less

Evolution of ferroelectric SrBi2Nb2O9 phase embedded in tellurite glass

NASA Astrophysics Data System (ADS)

Mohamed, E. A.

2017-12-01

Glasses with the composition, [(100-x)TeO2- x(SrO-Bi2O3-Nb2O5)] with x = 20, 30 and 40 (in mol %) were prepared. The X-ray diffraction (XRD) pattern and differential thermal analysis (DTA) for the as-prepared samples confirmed the amorphous and glassy characteristics, respectively. The SrBi2Nb2O9 phase in tellurite glass for HT773 sample at x = 40 mol % is formed and confirmed by the Rietveld refinement. DTA curves for all glass samples exhibit two endothermic dips while the two broad exothermic peaks at lower x reduced to one at higher x. Infrared (IR) results revealed that the glassy matrix are composed of TeO3, TeO3+1, TeO4, BiO6 and NbO6 structural units. The changes in the density (ρ), molar volume (Vm), oxygen molar volume (V0) and oxygen packing fraction (OPD) have correlated with structural changes in the glass network. The optical studies show an absorption bands below the absorption edge in the glass samples.

Effects of an in vacancy on local distortion of fast phase transition in Bi-doped In3SbTe2

NASA Astrophysics Data System (ADS)

Choi, Minho; Choi, Heechae; Kim, Seungchul; Ahn, Jinho; Kim, Yong Tae

2017-12-01

Indium vacancies in Bi-doped In3SbTe2 (BIST) cause local distortion or and faster phase transition of BIST with good stability. The formation energy of the In vacancy in the BIST is relatively lower compared to that in IST due to triple negative charge state of the In vacancy ( V 3- In) and higher concentration of the V 3- In in BIST. The band gap of BIST is substantially reduced with increasing concentrations of the V 3- In and the hole carriers, which results in a higher electrical conductivity. The phase-change memory (PRAM) device fabricated with the BIST shows very fast, stable switching characteristics at lower voltages.

Electrical Detection of Charge-Current-Induced Spin Polarization Due to Spin-Momentum Locking in Bi2Se3

DTIC Science & Technology

2014-01-01

Robinson2, Y. Liu3, L. Li3 and B. T. Jonker1* Topological insulators exhibit metallic surface states populated by massless Dirac fermions with spin...classic dichotomy of metals and semi- conductors1–4. Whereas the bulk states form a bandgap, the surface states form a Dirac cone similar to graphene (Fig...magnetoelectric coupling12. Examples of TI materials include Bi1–xSbx (ref. 4), Bi2Se3, Bi2Te3 and Sb2Te3 (refs 13–15). One of the most striking properties is spin

Nd3+-doped TeO2-Bi2O3-ZnO transparent glass ceramics for laser application at 1.06 μm

NASA Astrophysics Data System (ADS)

Hu, Xiaolin; Luo, Zhiwei; Liu, Taoyong; Lu, Anxian

2017-04-01

The high crystallinity transparent glass ceramics based on Nd3+-doped 70TeO2-15Bi2O3-15ZnO (TBZ) compositions were successfully prepared by two-step heat treatment process. The effects of Nd2O3 content on the thermal, structural, mechanical, and optical properties of TBZ glass ceramics were studied. The incorporation of Nd2O3 enhanced the crystallization tendency in the matrix glass composition. The crystal phase and morphology of Bi2Te4O11 in the glass ceramics were confirmed by X-ray diffraction and field emission scanning electron microscopy. Due to precipitate more crystal phase, the hardness values increased from 3.21 to 3.66 GPa. Eight absorption peaks were observed from 400 to 900 nm and three emission bands appeared in the range of 850-1400 nm. With the increasing of Nd2O3 content from 0.5 to 2.5 wt%, the intensity of absorption peaks enhanced and the emission intensity increased up to 1.0 wt% and then fell down for further dopant concentration. The fluorescence decay lifetime decreased rapidly starting from 1.5 wt% Nd2O3 content due to the obvious energy migration among Nd3+. According to the extreme strong emission band around 1062 nm and the optimum Nd2O3 content (1.0 wt%), N10 glass ceramic was considered as a potential material for 1.06 μm laser applications.

Experimental detection of a Majorana mode in the core of a magnetic vortex inside a topological insulator-superconductor Bi(2)Te(3)/NbSe(2) heterostructure.

PubMed

Xu, Jin-Peng; Wang, Mei-Xiao; Liu, Zhi Long; Ge, Jian-Feng; Yang, Xiaojun; Liu, Canhua; Xu, Zhu An; Guan, Dandan; Gao, Chun Lei; Qian, Dong; Liu, Ying; Wang, Qiang-Hua; Zhang, Fu-Chun; Xue, Qi-Kun; Jia, Jin-Feng

2015-01-09

Majorana fermions have been intensively studied in recent years for their importance to both fundamental science and potential applications in topological quantum computing. They are predicted to exist in a vortex core of superconducting topological insulators. However, it is extremely difficult to distinguish them experimentally from other quasiparticle states for the tiny energy difference between Majorana fermions and these states, which is beyond the energy resolution of most available techniques. Here, we circumvent the problem by systematically investigating the spatial profile of the Majorana mode and the bound quasiparticle states within a vortex in Bi(2)Te(3) films grown on a superconductor NbSe(2). While the zero bias peak in local conductance splits right off the vortex center in conventional superconductors, it splits off at a finite distance ∼20  nm away from the vortex center in Bi(2)Te(3). This unusual splitting behavior has never been observed before and could be possibly due to the Majorana fermion zero mode. While the Majorana mode is destroyed by the interaction between vortices, the zero bias peak splits as a conventional superconductor again. This work provides self-consistent evidences of Majorana fermions and also suggests a possible route to manipulating them.

Bismuth doping strategies in GeTe nanowires to promote high-temperature phase transition from rhombohedral to face-centered cubic structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jie; Huang, Rong; Wei, Fenfen

2014-11-17

The phase transition of Bi-doped (∼3 at. %) GeTe nanowires from a rhombohedral (R) to a face-centered cubic (C) structure was observed in in situ high-temperature X-ray diffraction. The promotion of high-temperature R-C phase transition by a doping approach was revealed. Ab initio energy calculations of doped GeTe at various Bi doping concentrations were performed to interpret the promoted temperature-induced phase transitions. Those results indicated that the total energy differences between R and C structures of doped GeTe decreased as Bi doping concentrations increased, which facilitated R-C phase transitions.

Low temperature thermoelectric properties of Bi2-xSbxTeSe2 crystals near the n-p crossover

NASA Astrophysics Data System (ADS)

Fuccillo, M. K.; Charles, M. E.; Hor, Y. S.; Jia, Shuang; Cava, R. J.

2012-07-01

Seebeck coefficients, electrical resistivities, thermal conductivities and figure of merit ZT of Bi2-xSbxTeSe2 crystals (x=0.8, 0.9, 1.0, 1.1, and 1.2) measured along the hexagonal basal plane are presented. The crystals gradually change from n- to p-type with increasing Sb content, with the crossover lying in the region between x=1.0 and 1.1. The crossover is accounted for by a simple (p-n) electron-hole compensation model, as supported by carrier concentrations determined from Hall measurements. ZT was found to be maximized near the crossover on the p-type side, with the high electrical resistance of the Se-rich crystals apparently the limiting factor in the performance. These materials may serve as a basis for future nanostructuring or doping studies.

Sn-doped Bi1.1Sb0.9Te2S: An ideal bulk topological insulator

NASA Astrophysics Data System (ADS)

Kushwaha, Sk; Pletikosic, I.; Liang, T.; Gyenis, A.; Lapidus, Sh; Tian, Y.; Zhao, H.; Burch, Ks; Lin, J.; Wang, W.; Ji, H.; Fedorov, Av; Yazdani, A.; Ong, Np; Valla, T.; Cava, Rj

In the recent decade the topological insulators have been of significant importance for the condensed matter community. However, so far no real materials could fulfill all the requirements. Here, we present the Bridgman growth of slightly Sn-doped Bi1.1Sb0.9Te2S (with bulk band gap of 350) single crystals and characterization by electronic transport, STM and ARPES. The results on the crystals exhibit an intrinsic semiconducting behavior with the Fermi level and Dirac energies lie in bulk gap and high quality 2D surface states are detangled from the bulk states, and it fulfils all the requirements to be an ideal topological insulator. ARO MURI W911NF-12-1-0461; ARO W911NF-12-1-0461; MRSEC NSF-DMR-1420541; LBNL & BNL DE-AC02-05CH11231 & DE-SC0012704; DOE Office of Science DE-AC02-06CH11357; NSF DMR-1410846.

Conductance relaxation in GeBiTe: Slow thermalization in an open quantum system

NASA Astrophysics Data System (ADS)

Ovadyahu, Z.

2018-02-01

This work describes the microstructure and transport properties of GeBixTey films with emphasis on their out-of-equilibrium behavior. Persistent-photoconductivity (PPC), previously studied in the phase-change compound GeSbxTey , is also quite prominent in this system. Much weaker PPC response is observed in the pure GeTe compound and when alloying GeTe with either In or Mn. Films made from these compounds share the same crystallographic structure, the same p -type conductivity, a similar compositional disorder extending over mesoscopic scales, and similar mosaic morphology. The enhanced photoconductive response exhibited by the Sb and Bi alloys may therefore be related to their common chemistry. Persistent photoconductivity is observable in GeBixTey films at the entire range of sheet resistances studied in this work (≈103Ω to ≈55 M Ω ). The excess conductance produced by a brief exposure to infrared illumination decays with time as a stretched exponential (Kohlrausch law). Intrinsic electron-glass effects, on the other hand, are observable in thin films of GeBixTey only for samples that are strongly localized just like it was noted with the seven electron glasses previously studied. These include a memory dip which is the defining attribute of the phenomenon. The memory dip in GeBixTey is the widest amongst the germanium-telluride alloys studied to date consistent with the high carrier concentration N ≥1021cm-3 of this compound. The thermalization process exhibited in either the PPC state or in the electron-glass regime is sluggish but the temporal law of the relaxation from the out-of-equilibrium state is distinctly different. Coexistence of the two phenomena give rise to some nontrivial effects, in particular, the visibility of the memory dip is enhanced in the PPC state. The relation between this effect and the dependence of the memory-effect magnitude on the ratio between the interparticle interaction and quench disorder is discussed.

Potential 2D thermoelectric material ATeI (A = Sb and Bi) monolayers from a first-principles study

NASA Astrophysics Data System (ADS)

Guo, San-Dong; Zhang, Ai-Xia; Li, Hui-Chao

2017-11-01

Lots of two-dimensional (2D) materials have been predicted theoretically and further confirmed in experiments, and have wide applications in nanoscale electronic, optoelectronic and thermoelectric devices. In this work, the thermoelectric properties of ATeI (A = Sb and Bi) monolayers are systematically investigated according to semiclassical Boltzmann transport theory. It is found that spin-orbit coupling (SOC) has an important effect on the electronic transport coefficients of p-type doping, but a negative influence on n-type doping. The room-temperature sheet thermal conductance is 14.2 {{W}} {{{K}}}-1 for SbTeI and 12.6 {{W}} {{{K}}}-1 for BiTeI, which is lower than that of most well-known 2D materials, such as the transition-metal dichalcogenide, group IV-VI, group VA and group IV monolayers. The very low sheet thermal conductance of ATeI (A = Sb and Bi) monolayers is mainly due to their small group velocities and short phonon lifetimes. The strongly polarized covalent bonds between A and Te or I atoms induce strong phonon anharmonicity, which gives rise to low lattice thermal conductivity. It is found that the high-frequency optical branches contribute significantly to the total thermal conductivity, which is obviously different from the usual picture, where there is little contribution from the optical branches. According to cumulative lattice thermal conductivity with respect to the phonon mean free path (MFP), it is difficult to further reduce the lattice thermal conductivity using nanostructures. Finally, the possible thermoelectric figure of merit ZT values of the ATeI (A = Sb and Bi) monolayers are calculated. It is found that p-type doping has much better thermoelectric properties than n-type doping. At room temperature, the peak ZT can reach 1.11 for SbTeI and 0.87 for BiTeI, respectively. These results make us believe that ATeI (A = Sb and Bi) monolayers may be potential 2D thermoelectric materials, which could stimulate further experimental work

Potential 2D thermoelectric material ATeI (A = Sb and Bi) monolayers from a first-principles study.

PubMed

Guo, San-Dong; Zhang, Ai-Xia; Li, Hui-Chao

2017-11-03

Lots of two-dimensional (2D) materials have been predicted theoretically and further confirmed in experiments, and have wide applications in nanoscale electronic, optoelectronic and thermoelectric devices. In this work, the thermoelectric properties of ATeI (A = Sb and Bi) monolayers are systematically investigated according to semiclassical Boltzmann transport theory. It is found that spin-orbit coupling (SOC) has an important effect on the electronic transport coefficients of p-type doping, but a negative influence on n-type doping. The room-temperature sheet thermal conductance is 14.2 [Formula: see text] for SbTeI and 12.6 [Formula: see text] for BiTeI, which is lower than that of most well-known 2D materials, such as the transition-metal dichalcogenide, group IV-VI, group VA and group IV monolayers. The very low sheet thermal conductance of ATeI (A = Sb and Bi) monolayers is mainly due to their small group velocities and short phonon lifetimes. The strongly polarized covalent bonds between A and Te or I atoms induce strong phonon anharmonicity, which gives rise to low lattice thermal conductivity. It is found that the high-frequency optical branches contribute significantly to the total thermal conductivity, which is obviously different from the usual picture, where there is little contribution from the optical branches. According to cumulative lattice thermal conductivity with respect to the phonon mean free path (MFP), it is difficult to further reduce the lattice thermal conductivity using nanostructures. Finally, the possible thermoelectric figure of merit ZT values of the ATeI (A = Sb and Bi) monolayers are calculated. It is found that p-type doping has much better thermoelectric properties than n-type doping. At room temperature, the peak ZT can reach 1.11 for SbTeI and 0.87 for BiTeI, respectively. These results make us believe that ATeI (A = Sb and Bi) monolayers may be potential 2D thermoelectric materials, which could stimulate further experimental

Optical transitions of Er3+/Yb3+ codoped TeO2-WO3-Bi2O3 glass.

PubMed

Shen, Xiang; Nie, Qiuhua; Xu, Tiefeng; Gao, Yuan

2005-10-01

Optical absorption and emission properties of the Er3+/Yb3+ codoped TeO2-WO3-Bi2O3 (TWB) glass has been investigated. The transition probabilities, excited state lifetimes, and the branching ratios have been predicted for Er3+ based on the Judd-Ofelt theory. The broad 1.5 microm fluorescence was observed under 970 nm excitation, and its full width at half maximum (FWHM) is 77 nm. The emission cross-section is calculated using the McCumber theory, and the peak emission cross-section is 1.03 x 10(-21) cm2 at 1.531 microm. This value is much larger than those of the silicate and phosphate glasses. Efficient green and weak red upconversion luminescence from Er3+ centers in the glass sample was observed at room temperature, and the upconversion excitation processes have been analyzed.

Origins of enhanced thermoelectric power factor in topologically insulating Bi{sub 0.64}Sb{sub 1.36}Te{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Wei; State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070; Chi, Hang

2016-01-25

In this research, we report the enhanced thermoelectric power factor in topologically insulating thin films of Bi{sub 0.64}Sb{sub 1.36}Te{sub 3} with a thickness of 6–200 nm. Measurements of scanning tunneling spectroscopy and electronic transport show that the Fermi level lies close to the valence band edge, and that the topological surface state (TSS) is electron dominated. We find that the Seebeck coefficient of the 6 nm and 15 nm thick films is dominated by the valence band, while the TSS chiefly contributes to the electrical conductivity. In contrast, the electronic transport of the reference 200 nm thick film behaves similar to bulk thermoelectric materialsmore » with low carrier concentration, implying the effect of the TSS on the electronic transport is merely prominent in the thin region. The conductivity of the 6 nm and 15 nm thick film is obviously higher than that in the 200 nm thick film owing to the highly mobile TSS conduction channel. As a consequence of the enhanced electrical conductivity and the suppressed bipolar effect in transport properties for the 6 nm thick film, an impressive power factor of about 2.0 mW m{sup −1} K{sup −2} is achieved at room temperature for this film. Further investigations of the electronic transport properties of TSS and interactions between TSS and the bulk band might result in a further improved thermoelectric power factor in topologically insulating Bi{sub 0.64}Sb{sub 1.36}Te{sub 3} thin films.« less

Polarizability, optical basicity and optical properties of SiO2B2O3Bi2O3TeO2 glass system

NASA Astrophysics Data System (ADS)

Kashif, I.; Ratep, A.; Adel, Gh.

2018-07-01

Glasses having a composition xSiO2 xB2O3 (95-2 x) Bi2O35TeO2 where x = (5, 10, 15, 20, 25) prepared by the melt-quenching technique. Thermal stability, density, optical transmittance, and the refractive index of these glasses investigated. Glass samples were transparent in the visible to near-infrared (NIR) region and had a high refractive index. A number of glass samples have high glass-forming ability. This indicates that the quarterly glasses are suitable for optical applications in the visible to the NIR region. Bi2O3 substituted by B2O3 and SiO2 on optical properties discussed. It suggested that the substitution of Bi2O3 increased the density, molar volume, the molar polarizability, optical basicity and refractive index in addition to, the oxygen packing density, the optical energy gap, and metallization decrease. These results are helpful for designing new optical glasses controlled to have a higher refractive index. All studied glass presented high nonlinearities, and the addition of network modifiers made a little contribution. Results clarified the bandgap energy reduction, which associated with the growth within the non-bridging oxygen content with the addition of the network modifier. An increase in the refractive index nonlinearity explained by the optical basicity and the high electronic polarizability of the modifier ions.

Prominent metallic surface conduction and the singular magnetic response of topological Dirac fermion in three-dimensional topological insulator Bi1.5Sb0.5Te1.7Se1.3.

PubMed

Dutta, Prithwish; Pariari, Arnab; Mandal, Prabhat

2017-07-07

We report semiconductor to metal-like crossover in the temperature dependence of resistivity (ρ) due to the switching of charge transport from bulk to surface channel in three-dimensional topological insulator Bi 1.5 Sb 0.5 Te 1.7 Se 1.3 . Unlike earlier studies, a much sharper drop in ρ(T) is observed below the crossover temperature due to the dominant surface conduction. Remarkably, the resistivity of the conducting surface channel follows a rarely observable T 2 dependence at low temperature, as predicted theoretically for a two-dimensional Fermi liquid system. The field dependence of magnetization shows a cusp-like paramagnetic peak in the susceptibility (χ) at zero field over the diamagnetic background. The peak is found to be robust against temperature and χ decays linearly with the field from its zero-field value. This unique behavior of the χ is associated with the spin-momentum locked topological surface state in Bi 1.5 Sb 0.5 Te 1.7 Se 1.3 . The reconstruction of the surface state with time is clearly reflected through the reduction of the peak height with the age of the sample.

Studies on Microstructure and Thermoelectric Properties of p-Type Bi-Sb-Te Based Alloys by Gas Atomization and Hot Extrusion Processes

NASA Astrophysics Data System (ADS)

Park, Ki-Chan; Madavali, Babu; Kim, Eun-Bin; Koo, Kyung-Wan; Hong, Soon-Jik

2017-05-01

p-Type Bi2Te3 + 75% Sb2Te3 based thermoelectric materials were fabricated via gas atomization and the hot extrusion process. The gas atomized powder showed a clean surface with a spherical shape, and expanded in a wide particle size distribution (average particle size 50 μm). The phase of the fabricated extruded and R-extruded bars was identified using x-ray diffraction. The relative densities of both the extruded and R-extruded samples were measured by Archimedes principle with ˜98% relative density. The R-extruded bar exhibited finer grain microstructure than that of single extrusion process, which was attributed to a recrystallization mechanism during the fabrication. The R-extruded sample showed improved Vickers hardness compared to the extruded sample due to its fine grain microstructure. The electrical conductivity improved for the extruded sample whereas the Seebeck coefficient decreases due to its high carrier concentration. The peak power factor, ˜4.26 × 10-3 w/mK2 was obtained for the single extrusion sample, which is higher than the R-extrusion sample owing to its high electrical properties.

Thickness-dependent carrier and phonon dynamics of topological insulator Bi2Te3 thin films.

PubMed

Zhao, Jie; Xu, Zhongjie; Zang, Yunyi; Gong, Yan; Zheng, Xin; He, Ke; Cheng, Xiang'ai; Jiang, Tian

2017-06-26

As a new quantum state of matter, topological insulators offer a new platform for exploring new physics, giving rise to fascinating new phenomena and new devices. Lots of novel physical properties of topological insulators have been studied extensively and are attributed to the unique electron-phonon interactions at the surface. Although electron behavior in topological insulators has been studied in detail, electron-phonon interactions at the surface of topological insulators are less understood. In this work, using optical pump-optical probe technology, we performed transient absorbance measurement on Bi 2 Te 3 thin films to study the dynamics of its hot carrier relaxation process and coherent phonon behavior. The excitation and dynamics of phonon modes are observed with a response dependent on the thickness of the samples. The thickness-dependent characteristic time, amplitude and frequency of the damped oscillating signals are acquired by fitting the signal profiles. The results clearly indicate that the electron-hole recombination process gradually become dominant with the increasing thickness which is consistent with our theoretical calculation. In addition, a frequency modulation phenomenon on the high-frequency oscillation signals induced by coherent optical phonons is observed.

Theory versus experiment for a family of single-layer compounds with a similar atomic arrangement: (Tl,X )/Si(111 )√{3 }×√{3 }(X =Pb,Sn,Bi,Sb,Te,Se)

NASA Astrophysics Data System (ADS)

Matetskiy, A. V.; Kibirev, I. A.; Mihalyuk, A. N.; Eremeev, S. V.; Gruznev, D. V.; Bondarenko, L. V.; Tupchaya, A. Y.; Zotov, A. V.; Saranin, A. A.

2017-08-01

Two-dimensional compounds made of one monolayer of Tl and one-third monolayer of Pb, Bi, Te, or Se (but not of Sn or Sb) on Si(111) have been found to have a similar atomic arrangement which can be visualized as a √{3 }×√{3 } -periodic honeycomb network of chained Tl trimers with atoms of the second adsorbate occupying the centers of the honeycomb units. Structural and electronic properties of the compounds have been examined in detail theoretically using density functional theory (DFT) calculations and experimentally using low-energy electron diffraction (LEED), scanning tunneling microscopy (STM), and angle-resolved photoelectron spectroscopy (ARPES) observations. It has been found that though structural parameters of the compounds are very similar for all species, the only common feature of their band structure is a considerable spin-splitting of the surface-state bands, while other basic electronic properties vary greatly with a change of species. The Tl-Pb compound is strongly metallic with two metallic surface-state bands; the Tl-Bi compound is also metallic but with a single metallic band; the Tl-Te and Tl-Se compounds appear to be insulators.

Large spin-orbit coupling and helical spin textures in 2D heterostructure [Pb 2BiS 3][AuTe 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, L.; Im, J.; DeGottardi, W.

Two-dimensional heterostructures with strong spin-orbit coupling have direct relevance to topological quantum materials and potential applications in spin-orbitronics. In this work, we report on novel quantum phenomena in [Pb 2BiS 3][AuTe 2], a new 2D strong spin-orbit coupling heterostructure system. Transport measurements reveal the spin-related carrier scattering is at odds with the Abrikosov-Gorkov model due to strong spin-orbit coupling. This is consistent with our band structure calculations which reveal a large spin-orbit coupling gap of ε so = 0.21 eV. Furthermore, the band structure is also characterized by helical-like spin textures which are mainly induced by strong spin-orbit coupling andmore » the inversion symmetry breaking in the heterostructure system.« less

Large spin-orbit coupling and helical spin textures in 2D heterostructure [Pb 2BiS 3][AuTe 2

DOE PAGES

Fang, L.; Im, J.; DeGottardi, W.; ...

2016-10-12

Two-dimensional heterostructures with strong spin-orbit coupling have direct relevance to topological quantum materials and potential applications in spin-orbitronics. In this work, we report on novel quantum phenomena in [Pb 2BiS 3][AuTe 2], a new 2D strong spin-orbit coupling heterostructure system. Transport measurements reveal the spin-related carrier scattering is at odds with the Abrikosov-Gorkov model due to strong spin-orbit coupling. This is consistent with our band structure calculations which reveal a large spin-orbit coupling gap of ε so = 0.21 eV. Furthermore, the band structure is also characterized by helical-like spin textures which are mainly induced by strong spin-orbit coupling andmore » the inversion symmetry breaking in the heterostructure system.« less

Sn-doped Bi 1.1Sb 0.9Te 2S bulk crystal topological insulator with excellent properties

DOE PAGES

S. K. Kushwaha; Pletikosic, I.; Liang, T.; ...

2016-04-27

A long-standing issue in topological insulator research has been to find a bulk single crystal material that provides a high quality platform for characterizing topological surface states without interference from bulk electronic states. This material would ideally be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, display quantum oscillations from the surface state electrons, and be growable as large, high quality bulk single crystals. Here we show that this materials obstacle is overcome by bulk crystals of lightly Sn-doped Bi 1.1Sb 0.9Te 2S grown by the Vertical Bridgeman method.more » We characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies, X-ray diffraction, and Raman scattering. We present this material as a high quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.« less

Doping effect on the thermoelectric properties of chalcopyrite CuGaTe2

NASA Astrophysics Data System (ADS)

Sharma, Sonu; Singh, Birender; Kumar, Pradeep

2018-05-01

In the present work, we have investigated the thermoelectric properties of CuGaTe2 by combining the first principle calculations with Boltzmann transport theory. CuGaTe2 is found to be a potential thermoelectric material with Seebeck coefficient 275µVK-1 at 200K. The thermoelectric properties of the compound can be further improved by doping it with p as well as n-type charge carriers. The heavily p-doped and lightly n-doped, CuGaTe2 provides power factor comparable to that of state-of-art Bi2Te3.

Theoretical studies on a TeO2/ZnO/diamond-layered structure for zero TCD SAW devices

NASA Astrophysics Data System (ADS)

Dewan, Namrata; Sreenivas, K.; Gupta, Vinay

2008-08-01

High-frequency surface acoustic wave (SAW) devices based on diamond substrate are useful because of their very high SAW velocity. In the present work, SAW propagation characteristics, such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of a TeO2/ZnO/diamond-layered structure, are examined using theoretical calculations. The ZnO/diamond bi-layer structure is found to exhibit a high positive TCD value. A zero TCD device structure is obtained after integration with a TeO2 over layer having a negative TCD value. Introduction of a non-piezoelectric TeO2 over layer on the bi-layer structure (ZnO/diamond) increases the coupling coefficient. A relatively low thickness of TeO2 thin film (~(1.6-3.1) × 10-3λ) is required to achieve temperature-stable SAW devices based on diamond.

Benefits of Carrier-Pocket Anisotropy to Thermoelectric Performance: The Case of p -Type AgBiSe 2

DOE PAGES

Parker, David S.; May, Andrew F.; Singh, David J.

2015-06-05

Here we study theoretically the effects of anisotropy on the thermoelectric performance of p-type AgBiSe 2. We present an apparent realization of the thermoelectric benefits of one-dimensional plate-like carrier pocket anisotropy in the valence band of this material. Based on first principles calculations we find a substantial anisotropy in the electronic structure, likely favorable for thermoelectric performance, in the valence bands of the hexagonal phase of the silver chalcogenide thermoelectric AgBiSe 2, while the conduction bands are more isotropic, and in our experiments do not attain high performance. AgBiSe 2 has already exhibited a ZT value of 1.5 in amore » high-temperature disordered fcc phase, but room-temperature performance has not been demonstrated. We develop a theory for the ability of anisotropy to decouple the density-of-states and conductivity effective masses, pointing out the influence of this effect in the high performance thermoelectrics Bi 2Te 3 and PbTe. From our first principles and Boltzmann transport calculations we find that p-type AgBiSe 2 has substantial promise as a room temperature thermoelectric, and estimate its performance.« less

Peculiar atomic dynamics in liquid GeTe with asymmetrical bonding: Observation by inelastic x-ray scattering

NASA Astrophysics Data System (ADS)

Inui, M.; Koura, A.; Kajihara, Y.; Hosokawa, S.; Chiba, A.; Kimura, K.; Shimojo, F.; Tsutsui, S.; Baron, A. Q. R.

2018-05-01

Collective dynamics in liquid GeTe was investigated by inelastic x-ray scattering at 2 ≤Q ≤31 nm-1 . The dynamic structure factor shows clear inelastic excitations. The excitation energies at low Q disperse with increasing Q , consistent with the behavior of a longitudinal-acoustic excitation. The dispersion curve has a flat-topped region around the pseudo-Brillouin-zone boundary, similar to what is observed in liquid Bi [Inui et al., Phys. Rev. B 92, 054206 (2015), 10.1103/PhysRevB.92.054206]. The dynamic structure factor shows a low-frequency excitation, and its coupling with the longitudinal-acoustic mode plays an important role for a flat-topped dispersion. From these results, it is inferred that atomic dynamics in liquid GeTe is strongly affected by a Peierls distortion similar to liquid Bi. By comparing the momentum transfer dependence of the excitation energy and quasielastic linewidth to partial structure factors obtained by our own ab initio molecular dynamics simulation for liquid GeTe, the quasielastic and inelastic components were found to be correlated with Te-Te and Ge-(Ge,Te) partial structure factors, respectively.

Synthesis and properties of nanocrystalline Bi-Te based thermoelectric materials for energy application

NASA Astrophysics Data System (ADS)

Almohaimeed, Sulaiman

Thermoelectric phenomenon is the science associated with converting thermal energy into electricity based on the Seebeck effect. Bismuth telluride Bi 2Te3 is currently considered to be the state-of-the art thermoelectric material with high efficiency for low temperature applications and is therefore attractive for energy harvesting processes. Nanostructures thermoelectric materials provide a novel way to enhance thermoelectric properties and are considered to be the efficient building blocks for thermoelectric devices. In this work, n- and p-type bulk nanocrystalline Bismuth telluride thermoelectric materials were prepared by mechanical alloying / ball milling technique. The produced nano-crystalline powder were then consolidated using hot compaction under inert atmosphere. The novel processing of these materials maintained the nanostructure in both n- and p-type. Structural properties of the n- and p-types were characterized using X ray diffraction, scanning electron microscopy and transmission electron microscope. These techniques proved that the average grian size of the milled thermoelectric materials was about 20 nm. Accordingly, a Significant improvement in the figure of merit (ZT) is achieved through significant lattice thermal conductivity reduction and Seebeck coefficient improvement. The maximum ZT value for the n-type nanocrystalline thermoelectric was 1.67 at 373 K while the maximum ZT value for the p-type was 1.78 at the same temperature. These values are considered to be the highest values reported for similar materials. Evaluation of the mechanical properties was also performed through microhardness measurement using Vickers micro-hardness test, which shows an enhancement in mechanical properties for the produced materials.

Physical and Optical Studies of Bi3+-Modified Erbium Doped Tellurite Glasses

NASA Astrophysics Data System (ADS)

Marzuki, Ahmad; Ega Fausta, Devara

2018-03-01

Er3+-doped tellurite glasses with various compositions (in mole%): 54TeO2-(41-x)ZnO-xBi2O3-2Na2O-3Er2O3 (x = 1, 2, 3, 4, and 5) were prepared with melt quenching method. Studies was aimed at investigating the effect of Bi3+ ion content on the physical and optical properties of the glasses. The density, refractive index, optical absorption, and optical energy band gap measurements were carried out at room temperature using pycnometer, Brewster angle method, and UV-VIS-NIR spectrophotometer, respectively. From the experiment, it was shown that the density and refractive index of the glasses increased with the increase of Bi3+ ions concentration. The absorption band intensity of electronic transition from 4I15/2 to 4H11/2 exhibited an increase as the Bi3+ ions concentration increase suggesting that incorporating Bi3+ ions into this glasses might improve the pumping efficiency.

Investigation of energy transfer mechanisms between Bi(2+) and Tm(3+) by time-resolved spectrum.

PubMed

Li, Yang; Sharafudeen, Kaniyarakkal; Dong, Guoping; Ma, Zhijun; Qiu, Jianrong

2013-11-01

Here, we report for the first time the optical properties of Bi(2+) and Tm(3+) co-doped germanate glasses and elucidate the potential of this material as substrates to improve the performance of CdTe solar cell. A strong emission peak at 800nm is observed under the excitation of 450-700nm in this material. The energy transfer processes from the transitions of Bi(2+) [(2)P3/2(1)→(2)P1/2]: Tm(3+) [(3)H6→(3)H4] are investigated by time-resolved luminescence spectroscopy. A cover glass exhibiting an ultra-broadband response spectrum covering the entire solar visible wavelength region is suggested to enhance the conversion efficiency of CdTe solar cells significantly. Copyright © 2013 Elsevier B.V. All rights reserved.

2 TeV HEB beam abort at the SSCL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schailey, R.; Bull, J.; Clayton, T.

1993-05-01

The High Energy Booster (HEB) of the Superconducting Super Collider Laboratory (SSCL) will require a full aperture beam abort over a dynamic energy range of 200 GeV to 2 TeV. Since the HEB is a bi-polar machine, both clockwise (CW) and the counter-clockwise (CCW) beam aborts are required. Also, the stored beam energy of 6.55 MJ in the superconducting HEB imposes upon the full aperture requirement. In this report, we describe the abort channels in the HEB utility straight sections, aperture restrictions, mechanical interferences and solutions, kicker misfires, and a 1 TeV beam absorber.

Superconductivity, Magnetoresistance, Magnetic Anomaly and Crystal Structure of New Phases of Topological Insulators Bi2Se3 and Sb2Te3

NASA Astrophysics Data System (ADS)

Kulbachinskii, V. A.; Buga, S. G.; Serebryanaya, N. R.; Perov, N. S.; Kytin, V. G.; Tarelkin, S. A.; Bagramov, R. H.; Eliseev, N. N.; Blank, V. D.

2018-03-01

We synthesized a new metastable phase of Bi2Se3 topological insulator by a rapid quenching after a high-pressure-high-temperature treatment at P≈7.7 GPa; 673Te3 by rapid quenching after a high-pressure–high-temperature treatment at P=3.7–7.7 GPa; T=873 K and found superconductivity with Tc=2 K. A zero-field magnetic susceptibility cusp and linear positive magnetoresistance indicate a topological insulator state.

Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sb x,Bi 1–x) 2Te 3

DOE PAGES

Patankar, Shreyas; Hinton, J. P.; Griesmar, Joel; ...

2015-12-31

Here, we report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator (Cr 0.12Bi 0.26Sb 0.62) 2Te 3. Measurements of the complex Kerr angle ΘK were performed as a function of photon energy in the range 0.8eV < ℏω < 3.0eV. We observed a peak in the real part of Θ K(ω) and zero crossing in the imaginary part that we attribute to a resonant interaction with a spin-orbit avoided crossing located ≈ 1.6 eV above the Fermi energy. The resonant enhancement allows measurement of themore » temperature and magnetic field dependence of Θ K in the ultrathin film limit, d ≥ 2 quintuple layers (QL). We find a sharp transition to zero remanent magnetization at 6 K for d < 8 QL, consistent with theories of the dependence of impurity spin interactions on film thickness and their location relative to topological insulator surfaces.« less

Observation of Majorana fermions in the vortex on topological insulator-superconductor heterostructure Bi2Te3/NbSe2

NASA Astrophysics Data System (ADS)

Jia, Jinfeng

Majorana fermion (MF) zero modes have been predicted in a wide variety of condensed matter systems and proposed as a potential building block for fault-tolerant quantum computer. Signatures of the MFs have been reported in the form of zero-energy conductance peak in various systems. As predicted, MFs appear as zero-energy vortex core modes with distinctive spatial profile in proximity-induced superconducting surface states of topological insulators. Furthermore, MFs can induce spin selective Andreev reflection (SSAR), a unique signature of MFs. We report the observation of all the three features for the MFs inside vortices in Bi2Te3/NbSe2 hetero-structure, in which proximity-induced superconducting gap on topological surface states was previously established. Especially, by using spin-polarized scanning tunneling microscopy/spectroscopy (STM/STS), we observed the spin dependent tunneling effect, and fully supported by theoretical analyses, which is a direct evidence for the SSAR from MFs. More importantly, all evidences are self-consistent. Our work provides definitive evidences of MFs and will stimulate the MFs research on their novel physical properties, hence a step towards their non-Abelian statistics and application in quantum computing.

Local atomic and electronic structures in ferromagnetic topological insulator Cr-doped (BixSb1-x) 2Te3 studied by XAFS and ab initio calculations

NASA Astrophysics Data System (ADS)

Liu, Zhen; Wei, Xinyuan; Wang, Jiajia; Pan, Hong; Ji, Fuhao; Ye, Mao; Yang, Zhongqin; Qiao, Shan

2015-09-01

The local atomic and electronic structures around the dopants in Cr-doped (BixSb1 -x )2Te3 are studied by x-ray absorption fine structure (XAFS) measurements and first-principles calculations. Both Cr and Bi are confirmed substituting Sb sites (CrSb and BiSb). The six nearest Te atoms around Cr move towards Cr and shorten the Cr-Te bond lengths to 2.76 Å and 2.77 Å for x =0.1 and x =0.2 , respectively. Importantly, we reveal the hybridization between the Sb/Te p states and Cr d states by the presence of a pre-edge peak at Cr K -absorption edge, which is also supported by our ab initio calculations. These findings provide important clues to understand the mechanism of ferromagnetic order in this system with quantum anomalous Hall effect.

Investigation of the bipolar effect in the thermoelectric material CaMg2Bi2 using a first-principles study.

PubMed

Gong, J J; Hong, A J; Shuai, J; Li, L; Yan, Z B; Ren, Z F; Liu, J-M

2016-06-28

The bipolar effect in relatively narrow band-gap thermoelectric (TE) compounds is a negative process deteriorating the TE properties particularly at higher temperatures. In this work, we investigate the TE performance of the compound CaMg2Bi2 using the first-principles calculation and semi-classical Boltzmann transport theory in combination with our experimental data. It is revealed that this compound exhibits a remarkable bipolar effect and temperature-dependent carrier concentration. The bipolar effect imposes remarkable influence on all the electron-transport related TE parameters. An effective carrier concentration neff as a function of temperature is proposed to account for the bipolar effect induced carrier excitations. The as-evaluated TE parameters then show good consistency with measured results. This work may shed light on our understanding of the bipolar effect in TE compounds.

Sb- and Bi-doped Mg2Si: location of the dopants, micro- and nanostructures, electronic structures and thermoelectric properties.

PubMed

Farahi, Nader; VanZant, Mathew; Zhao, Jianbao; Tse, John S; Prabhudev, Sagar; Botton, Gianluigi A; Salvador, James R; Borondics, Ferenc; Liu, Zhenxian; Kleinke, Holger

2014-10-28

Due to increasing global energy concerns, alternative sustainable methods to create energy such as thermoelectric energy conversion have become increasingly important. Originally, research into thermoelectric materials was focused on tellurides of bismuth and lead because of the exemplary thermoelectric properties of Bi2Te3 and PbTe. These materials, however, contain toxic lead and tellurium, which is also scarce and thus expensive. A viable alternative material may exist in Mg2Si, which needs to be doped and alloyed in order to achieve reasonable thermoelectric efficiency. Doping is a major problem, as p-type doping has thus far not produced competitive efficiencies, and n-type doping is problematic because of the low solubility of the typical dopants Sb and Bi. This investigation shows experimentally that these dopants can indeed replace Si in the crystal lattice, and excess Sb and Bi atoms are present in the grain boundaries in the form of Mg3Sb2 and Mg3Bi2. As a consequence, the carrier concentration is lower than the formal Sb/Bi concentration suggests, and the thermal conductivity is significantly reduced. DFT calculations are in good agreement with the experimental data, including the band gap and the Seebeck coefficient. Overall, this results in competitive efficiencies despite the low carrier concentration. While ball-milling was previously shown to enhance the solubility of the dopants and thus the carrier concentration, this did not lead to enhanced thermoelectric properties.

As, Bi, Hg, S, Sb, Sn and Te geochemistry of the J-M Reef, Stillwater Complex, Montana: constraints on the origin of PGE-enriched sulfides in layered intrusions

USGS Publications Warehouse

Zientek, M.L.; Fries, T.L.; Vian, R.W.

1990-01-01

The J-M Reef is an interval of disseminated sulfides in the Lower Banded series of the Stillwater Complex that is enriched in the platinum group elements (PGE). Palladium and Pt occur in solid solution in base-metal sulfides and as discrete PGE minerals. PGE minerals include sulfides, tellurides, arsenides, antimonides, bismuthides, and alloys with Fe, Sn, Hg, and Au. Several subpopulations can be delineated based on whole-rock chemical analyses for As, Bi, Cu, Hg, Pd, Pt, S, Sb and Te for samples collected from and adjacent to the J-M Reef. In general, samples from within the reef have higher Pt/Cu, Pd/Cu, Pd/Pt, Te/Bi and S/(Te+Bi) than those collected adjacent to the reef. Vertical compositional profiles through the reef suggest that Pd/Cu and Pt/Cu decrease systematically upsection from mineralized to barren rock. The majority of samples with elevated As, Sb and Hg occur adjacent to the reef, not within it, or in sulfide-poor rocks. Neither magma mixing nor fluid migration models readily explain why the minor quantities of sulfide minerals immediately adjacent to the sulfide-enriched layers that form the J-M Reef have different element ratios than the sulfide minerals that form the reef. If all the sulfides formed by exsolution during a magma mixing event and the modal proportion of sulfide now in the rocks are simply the result of mechanical processes that concentrated the sulfides into some layers and not others, then the composition of the sulfide would not be expected to be different. Models that rely upon ascending liquids or fluids are incompatible with the presence of sulfides that are not enriched in PGE immediately below or interlayered with the PGE-enriched sulfides layers. PGE-enriched postcumulus fluids should have reacted to the same extent with sulfides immediately outside the reef as within the reef. One explanation is that some of the sulfide minerals in the rocks outside the reef have a different origin than those that make up the reef. The

A new indicator mineral methodology based on a generic Bi-Pb-Te-S mineral inclusion signature in detrital gold from porphyry and low/intermediate sulfidation epithermal environments in Yukon Territory, Canada

NASA Astrophysics Data System (ADS)

Chapman, R. J.; Allan, M. M.; Mortensen, J. K.; Wrighton, T. M.; Grimshaw, M. R.

2017-12-01

Porphyry-epithermal and orogenic gold are two of the most important styles of gold-bearing mineralization within orogenic belts. Populations of detrital gold resulting from bulk erosion of such regions may exhibit a compositional continuum wherein Ag, Cu, and Hg in the gold alloy may vary across the full range exhibited by natural gold. This paper describes a new methodology whereby orogenic and porphyry-epithermal gold may be distinguished according to the mineralogy of microscopic inclusions observed within detrital gold particles. A total of 1459 gold grains from hypogene, eluvial, and placer environments around calc-alkaline porphyry deposits in Yukon (Nucleus-Revenue, Casino, Sonora Gulch, and Cyprus-Klaza) have been characterized in terms of their alloy compositions (Au, Ag, Cu, and Hg) and their inclusion mineralogy. Despite differences in the evolution of the different magmatic hydrothermal systems, the gold exhibits a clear Bi-Pb-Te-S mineralogy in the inclusion suite, a signature which is either extremely weak or (most commonly) absent in both Yukon orogenic gold and gold from orogenic settings worldwide. Generic systematic compositional changes in ore mineralogy previously identified across the porphyry-epithermal transition have been identified in the corresponding inclusion suites observed in samples from Yukon. However, the Bi-Te association repeatedly observed in gold from the porphyry mineralization persists into the epithermal environment. Ranges of P-T-X conditions are replicated in the geological environments which define generic styles of mineralization. These parameters influence both gold alloy composition and ore mineralogy, of which inclusion suites are a manifestation. Consequently, we propose that this methodology approach can underpin a widely applicable indicator methodology based on detrital gold.

Bi flux-dependent MBE growth of GaSbBi alloys

DOE PAGES

Rajpalke, M. K.; Linhart, W. M.; Yu, K. M.; ...

2015-03-05

The incorporation of Bi in GaSb 1-xBi x alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275 °C) and growth rate (1 μm h⁻¹). The Bi content is found to vary proportionally with Bi flux with Bi contents, as measured by Rutherford backscattering, in the range 0 < x ≤ 4.5%. The GaSbBi samples grown at the lowest Bi fluxes have smooth surfaces free of metallic droplets. The higher Bi flux samples have surface Bi droplets. The room temperature band gap of the GaSbBi epitaxial layers determined from optical absorptionmore » decreases linearly with increasing Bi content with a reduction of ~32 meV/%Bi.« less

Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi2Te3 topological insulator

NASA Astrophysics Data System (ADS)

Shrestha, K.; Chou, M.; Graf, D.; Yang, H. D.; Lorenz, B.; Chu, C. W.

2017-05-01

Weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge-carrier concentrations. At low charge-carrier density the WAL curves scale with the normal component of the magnetic field, demonstrating the dominance of topological surface states in magnetoconductivity. At high charge-carrier density the WAL curves scale with neither the applied field nor its normal component, implying a mixture of bulk and surface conduction. WAL due to topological surface states shows no dependence on the nature (electrons or holes) of the bulk charge carriers. The observations of an extremely large nonsaturating magnetoresistance and ultrahigh mobility in the samples with lower carrier density further support the presence of surface states. The physical parameters characterizing the WAL effects are calculated using the Hikami-Larkin-Nagaoka formula. At high charge-carrier concentrations, there is a greater number of conduction channels and a decrease in the phase coherence length compared to low charge-carrier concentrations. The extremely large magnetoresistance and high mobility of topological insulators have great technological value and can be exploited in magnetoelectric sensors and memory devices.

Direct synthesis of BiCuChO-type oxychalcogenides by mechanical alloying

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pele, Vincent; Barreteau, Celine; CNRS, Orsay F-91405

2013-07-15

We report on the direct synthesis of BiCuChO based materials by mechanical alloying (Ch=Se, Te). We show that contrary to the synthesis paths used in the previous reports dealing with this family of materials, which use costly annealings in closed silica tubes under controlled atmosphere, this new synthesis route enables the synthesis of pure phase materials at room temperature under air, with reasonable milling time. This synthesis procedure is easily scalable for large scale applications. - Highlights: • Phase pure BiCuSeO doped and undoped prepared by mechanical alloying. • Synthesis performed under air at room temperature. • Electrical properties similarmore » to that of samples synthesized by a classical path.« less

Wet-chemical synthesis of different bismuth telluride nanoparticles using metal organic precursors - single source vs. dual source approach.

PubMed

Bendt, Georg; Weber, Anna; Heimann, Stefan; Assenmacher, Wilfried; Prymak, Oleg; Schulz, Stephan

2015-08-28

Thermolysis of the single source precursor (Et2Bi)2Te in DIPB at 80 °C yielded phase-pure Bi4Te3 nanoparticles, while mixtures of Bi4Te3 and elemental Bi were formed at higher temperatures. In contrast, cubic Bi2Te particles were obtained by thermal decomposition of Et2BiTeEt in DIPB. Moreover, a dual source approach (hot injection method) using the reaction of Te(SiEt3)2 and Bi(NMe2)3 was applied for the synthesis of different pure Bi-Te phases including Bi2Te, Bi4Te3 and Bi2Te3, which were characterized by PXRD, REM, TEM and EDX. The influence of reaction temperature, precursor molar ratio and thermolysis conditions on the resulting material phase was verified. Moreover, reactions of alternate bismuth precursors such as Bi(NEt2)3, Bi(NMeEt)3 and BiCl3 with Te(SiEt3)2 were investigated.

Magnetic quantum phase transition in Cr-doped Bi 2(Se xTe 1-x) 3 driven by the Stark effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Zuocheng; Feng, Xiao; Wang, Jing

The interplay between magnetism and topology, as exemplified in the magnetic skyrmion systems, has emerged as a rich playground for finding novel quantum phenomena and applications in future information technology. Magnetic topological insulators (TI) have attracted much recent attention, especially after the experimental realization of quantum anomalous Hall effect. Future applications of magnetic TI hinge on the accurate manipulation of magnetism and topology by external perturbations, preferably with a gate electric field. In this work, we investigate the magneto transport properties of Cr doped Bi 2(Se xTe 1-x) 3 TI across the topological quantum critical point (QCP). We find thatmore » the external gate voltage has negligible effect on the magnetic order for samples far away from the topological QCP. However, for the sample near the QCP, we observe a ferromagnetic (FM) to paramagnetic (PM) phase transition driven by the gate electric field. Theoretical calculations show that a perpendicular electric field causes a shift of electronic energy levels due to the Stark effect, which induces a topological quantum phase transition and consequently a magnetic phase transition. Finally, the in situ electrical control of the topological and magnetic properties of TI shed important new lights on future topological electronic or spintronic device applications.« less

Magnetic quantum phase transition in Cr-doped Bi 2(Se xTe 1-x) 3 driven by the Stark effect

DOE PAGES

Zhang, Zuocheng; Feng, Xiao; Wang, Jing; ...

2017-08-07

The interplay between magnetism and topology, as exemplified in the magnetic skyrmion systems, has emerged as a rich playground for finding novel quantum phenomena and applications in future information technology. Magnetic topological insulators (TI) have attracted much recent attention, especially after the experimental realization of quantum anomalous Hall effect. Future applications of magnetic TI hinge on the accurate manipulation of magnetism and topology by external perturbations, preferably with a gate electric field. In this work, we investigate the magneto transport properties of Cr doped Bi 2(Se xTe 1-x) 3 TI across the topological quantum critical point (QCP). We find thatmore » the external gate voltage has negligible effect on the magnetic order for samples far away from the topological QCP. However, for the sample near the QCP, we observe a ferromagnetic (FM) to paramagnetic (PM) phase transition driven by the gate electric field. Theoretical calculations show that a perpendicular electric field causes a shift of electronic energy levels due to the Stark effect, which induces a topological quantum phase transition and consequently a magnetic phase transition. Finally, the in situ electrical control of the topological and magnetic properties of TI shed important new lights on future topological electronic or spintronic device applications.« less

In-situ Observation of Size and Irradiation Effects on Thermoelectric Properties of Bi-Sb-Te Nanowire in FIB Trimming

PubMed Central

Chien, Chia-Hua; Lee, Ping-Chung; Tsai, Wei-Han; Lin, Chien-Hung; Lee, Chih-Hao; Chen, Yang-Yuan

2016-01-01

In this report, the thermoelectric properties of a Bi0.8Sb1.2Te2.9 nanowire (NW) were in-situ studied as it was trimmed from 750 down to 490 and 285 nm in diameter by a focused ion beam. While electrical and thermal conductivities both indubitably decrease with the diameter reduction, the two physical properties clearly exhibit different diameter dependent behaviors. For 750 and 490 nm NWs, much lower thermal conductivities (0.72 and 0.69 W/m-K respectively) were observed as compared with the theoretical prediction of Callaway model. The consequence indicates that in addition to the size effect, extra phonon scattering of defects created by Ga ion irradiation was attributed to the reduction of thermal conductivities. As the NW was further trimmed down to 285 nm, both the electrical and thermal conductivities exhibited a dramatic reduction which was ascribed to the formation of amorphous structure due to Ga ion irradiation. The size dependence of Seebeck coefficient and figure of merit (ZT) show the maximum at 750 nm, then decrease linearly with size decrease. The study not only provides the thoroughly understanding of the size and defect effects on the thermoelectric properties but also proposes a possible method to manipulate the thermal conductivity of NWs via ion irradiation. PMID:27030206

Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi{sub 2}Te{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dey, Rik, E-mail: rikdey@utexas.edu; Pramanik, Tanmoy; Roy, Anupam

We have studied angle dependent magnetoresistance of Bi{sub 2}Te{sub 3} thin film with field up to 9 T over 2–20 K temperatures. The perpendicular field magnetoresistance has been explained by the Hikami-Larkin-Nagaoka theory alone in a system with strong spin-orbit coupling, from which we have estimated the mean free path, the phase coherence length, and the spin-orbit relaxation time. We have obtained the out-of-plane spin-orbit relaxation time to be small and the in-plane spin-orbit relaxation time to be comparable to the momentum relaxation time. The estimation of these charge and spin transport parameters are useful for spintronics applications. For parallel field magnetoresistance,more » we have confirmed the presence of Zeeman effect which is otherwise suppressed in perpendicular field magnetoresistance due to strong spin-orbit coupling. The parallel field data have been explained using both the contributions from the Maekawa-Fukuyama localization theory for non-interacting electrons and Lee-Ramakrishnan theory of electron-electron interactions. The estimated Zeeman g-factor and the strength of Coulomb screening parameter agree well with the theory. Finally, the anisotropy in magnetoresistance with respect to angle has been described by the Hikami-Larkin-Nagaoka theory. This anisotropy can be used in anisotropic magnetic sensor applications.« less

In-situ synthesis of nanofibers with various ratios of BiOClx/BiOBry/BiOIz for effective trichloroethylene photocatalytic degradation

NASA Astrophysics Data System (ADS)

Zhang, Yifan; Park, Mira; Kim, Hak Yong; Ding, Bin; Park, Soo-Jin

2016-10-01

In this work, BiOClx/BiOBry/BiOIz (x + y + z = 1) composite nanofibers were prepared through electrospinning and the sol-gel methods. Photocatalytic degradation of trichloroethylene (TCE) by BiOClx/BiOBry/BiOIz/PAN nanofibers was systematically investigated via gas chromatography (GC). Optimum photocatalytic activity was achieved with BiOCl0.3/BiOBr0.3/BiOI0.4 fibers under solar light irradiation. X-ray photoelectron spectroscopy (XPS) peaks due to Csbnd O and Cdbnd O were observed at 286.0 and 288.3 eV, respectively, it indicated that the BiOClx/BiOBry/BiOIz mixture had been successfully doped on the polyacrylonitrile (PAN) fibers. Furthermore, X-ray diffraction (XRD) results also confirmed that we had synthesized the as-prepared composite nanofibers successfully. Photocatalytic activities of BiOCl0.3/BiOBr0.3/BiOI0.4 were up to 3 times higher than the pure BiOCl, BiOBr and BiOI samples, respectively.

Growth and Characterization of Large Scale (Sb1-xBix)2 Te3 Thin Films on Mica

NASA Astrophysics Data System (ADS)

Ni, Yan; Zhang, Zhen; Jiles, David

2015-03-01

Topological insulators (TIs) attract attentions for both fundamental science and potential applications because of their bulk band inversion arising from the strong spin orbital coupling. However, it is necessary to tune the Fermi level and Dirac cone in 3D TI (Sb1-xBix)2 Te3 to make an ideal system for TI applications. In this work, we report high quality (Sb1-xBix)2 Te3 thin films grown on mica substrate by molecular beam epitaxy. The surface roughness of the thin film can reach as low as 0.7 nm in a large area by van der Waals epitaxy. (Sb1-xBix)2 Te3 thin film with x = 0.04 shows a local maxima in the room temperature sheet resistance, which indicates a minimization of the carrier density due to band structure engineering. Moreover, for higher Bi concentration, due to an increase of the surface roughness and corresponding reduction of electron mobility, the sheet resistance increases. Our results on the feasibility of depositing (Sb1-xBix)2 Te3 in wide Bi range on mica substrate will helpful for the application of TI at room temperature and flexible electronics. Authors would like to thank the financial support from the U.S. National Science Foundation under the Award No. 1201883.

Interfacial Dirac cones from alternating topological invariant superlattice structures of Bi2Se3.

PubMed

Song, Jung-Hwan; Jin, Hosub; Freeman, Arthur J

2010-08-27

When the three-dimensional topological insulators Bi2Se3 and Bi2Te3 have an interface with vacuum, i.e., a surface, they show remarkable features such as topologically protected and spin-momentum locked surface states. However, for practical applications, one often requires multiple interfaces or channels rather than a single surface. Here, for the first time, we show that an interfacial and ideal Dirac cone is realized by alternating band and topological insulators. The multichannel Dirac fermions from the superlattice structures open a new way for applications such as thermoelectric and spintronics devices. Indeed, utilizing the interfacial Dirac fermions, we also demonstrate the possible power factor improvement for thermoelectric applications.

Giant Peak Voltage of Thermopower Waves Driven by the Chemical Potential Gradient of Single-Crystalline Bi2 Te3.

PubMed

Singh, Swati; Mun, Hyeona; Lee, Sanghoon; Kim, Sung Wng; Baik, Seunghyun

2017-09-01

The self-propagating exothermic chemical reaction with transient thermovoltage, known as the thermopower wave, has received considerable attention recently. A greater peak voltage and specific power are still demanded, and materials with greater Seebeck coefficients have been previously investigated. However, this study employs an alternative mechanism of transient chemical potential gradient providing an unprecedentedly high peak voltage (maximum: 8 V; average: 2.3 V) and volume-specific power (maximum: 0.11 W mm -3 ; average: 0.04 W mm -3 ) using n-type single-crystalline Bi 2 Te 3 substrates. A mixture of nitrocellulose and sodium azide is used as a fuel, and ultraviolet photoelectron spectroscopy reveals a significant downshift in Fermi energy (≈5.09 eV) of the substrate by p-doping of the fuel. The induced electrical potential by thermopower waves has two distinct sources: the Seebeck effect and the transient chemical potential gradient. Surprisingly, the Seebeck effect contribution is less than 2.5% (≈201 mV) of the maximum peak voltage. The right combination of substrate, fuel doping, and anisotropic substrate geometry results in an order of magnitude greater transient chemical potential gradient (≈5.09 eV) upon rapid removal of fuel by exothermic chemical reaction propagation. The role of fuel doping and chemical potential gradient can be viewed as a key mechanism for enhanced heat to electric conversion performance. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Effect of SbI3 Doping on the Structure and Electrical Properties of n-Type Bi1.8Sb0.2Te2.85Se0.15 Alloy Prepared by the Free Growth Method

NASA Astrophysics Data System (ADS)

Wang, Xiaoyu; Yu, Yuan; Zhu, Bin; Gao, Na; Huang, Zhongyue; Xiang, Bo; Zu, Fangqiu

2018-02-01

Thermoelectric technology is regarded as one of the most promising direct power generation techniques via thermoelectric materials. However, the batch production and scale-up application are hindered because of the high-cost and poor performance. In this work, we adopt the free growth method to synthesize a series of the bulk materials of SbI3-doped Bi1.8Sb0.2Te2.85Se0.15 alloys. The structural and component investigations as well as the electrical properties characterization are carried out. The results show that SbI3 promotes the formation of Te-rich regions in the matrix. In addition, the synergistically optimized electrical conductivity and Seebeck coefficient are attained by controlling the SbI3 doping concentration. Thus, the sample with 0.30 wt.% SbI3 displays a highly increased power factor of ˜ 13.57 μW cm-1 K-2, which is nearly 21 times higher than that of the undoped one. Moreover, the free growth method is reproducible, convenient and economical. Therefore, it has great potential as a promising technology for the batch synthesis.

High-Output-Power Densities from MBE-grown n- and p-Type PbTeSe-based Thermoelectrics via Improved Contact Metallization

DTIC Science & Technology

2011-10-19

is uncertain . . The results of these various studies seem consistent that the Fermi . level at the surface of PbTe or Pbi -xSnxTe is not inherently...Both sides: ~T=220"C n-type IS am P!!I~:Ii SE+l9 n++ 200 nm Til Device P=30W/cm2 1001!!!1 Pbi ~Se 3.5E+I8 a+ NDLS ISO am PI!I!::Bi SE+19 a++ 200nmNil

Highly Enhanced Thermoelectric Properties of Bi/Bi2S3 Nanocomposites.

PubMed

Ge, Zhen-Hua; Qin, Peng; He, DongSheng; Chong, Xiaoyu; Feng, Dan; Ji, Yi-Hong; Feng, Jing; He, Jiaqing

2017-02-08

Bismuth sulfide (Bi 2 S 3 ) has been of high interest for thermoelectric applications due to the high abundance of sulfur on Earth. However, the low electrical conductivity of pristine Bi 2 S 3 results in a low figure of merit (ZT). In this work, Bi 2 S 3 @Bi core-shell nanowires with different Bi shell thicknesses were prepared by a hydrothermal method. The core-shell nanowires were densified to Bi/Bi 2 S 3 nanocomposite by spark plasma sintering (SPS), and the structure of the nanowire was maintained as the nanocomposite due to rapid SPS processing and low sintering temperature. The thermoelectric properties of bulk samples were investigated. The electrical conductivity of a bulk sample after sintering at 673 K for 5 min using Bi 2 S 3 @Bi nanowire powders prepared by treating Bi 2 S 3 nanowires in a hydrazine solution for 3 h is 3 orders of magnitude greater than that of a pristine Bi 2 S 3 sample. The nanocomposite possessed the highest ZT value of 0.36 at 623 K. This represents a new strategy for densifying core-shell powders to enhance their thermoelectric properties.

Bi-induced band gap reduction in epitaxial InSbBi alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rajpalke, M. K.; Linhart, W. M.; Yu, K. M.

2014-11-24

The properties of molecular beam epitaxy-grown InSb 1-x Bi x alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ~88 meV (14.1 μm)more » for InSb 0.976Bi 0.024, a reduction of ~35 meV/%Bi.« less

Optical absorption in 3D topological insulator Bi2Te3 with applications to THz detectors (Presentation Recording)

NASA Astrophysics Data System (ADS)

Sengupta, Parijat; Bellotti, Enrico

2015-08-01

Topological insulators (TI) are a new class of materials that have an energy gap in bulk but possess gapless states bound to the sample surface or edge that have been theoretically predicted and experimentally observed [1]. The topological state in Bi2Te3 is characterized by a linear dispersion and a Dirac cone at the Γpoint. The optical absorption on the surface of a TI is given by the standard graphene-like απ/2 when a linear dispersion is assumed. Realistically, at k-points away from Γ, higher order cubic terms in k that represent the underlying hexagonal symmetry [2] of the crystal dominate and give rise to warping of bands. The optical absorption of a ferromagnetic coated gapped 3D TI film with warping terms considered is longer απ/2 but significantly modified. We demonstrate, by using wave functions from a continuum-Hamiltonian and Fermi-golden rule, the absorption spectrum on the surface of a TI as a function of the chemical potential, film-thickness and incident photon energy. A linear response theory based calculation is also performed using the Kubo formula to determine the longitudinal optical conductivity whose real part gives absorption as a function of photon frequency. The absorption in materials with Dirac fermions which is significantly higher than in normal THz detectors [3] can be further modulated in a TI by explicitly including the warping term making them highly efficient and tunable photodetectors. [1] M.Hasan and C.Kane, Rev.Mod.Phys. 82, 3045(2010) [2] L.Fu, Phys.Rev.Lett.103, 266801(2009) [3] X.Zhang et al., Phys. Rev B, 82, 245107(2010)

The structure of Na{sub 3}SbTe{sub 3}: How ionic and covalent bonding forces work together

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Jianhua; Miller, G.J.

1994-12-01

The compound Na{sub 3}SbTe{sub 3} has been synthesized from the elements and characterized by single crystal X-ray diffraction. Na{sub 3}SbTe{sub 3} is cubic, crystallizing in the cP28 structure type (isomorphous with Na{sub 3}AsS{sub 3}); space group P2{sub 1}3 (No. 198); a=9.6114(9) {angstrom}; Z = 4; R1 = 0.0324; wR2 = 0.0561 (I {le} 2{sigma}(I)). The structure consists of isolated sodium cations and trigonal pyramidal [SbTe{sub 3}]{sup {minus}3} anions with a Sb-Te bond length of 2.787(1) {angstrom} and a Te-Sb-Te bond angle of 100.0(1){degrees}. The structure is related to both the Li{sub 3}Bi and K{sub 3}AsS{sub 4}-type structures. Both lattice energymore » and semiempirical electronic structure calculations are utilized to evaluate various local and long-range structural aspects of this Zintl phase.« less

Delocalized metallic state on insulating, disordered BiSbTeSe2 thin films - a test of Z2 protection.

NASA Astrophysics Data System (ADS)

Gopal, Rk; Singh, Sourabh; Sarkar, Jit; Patro, Reshma; Roy, Subhadip; Mitra, Chiranjib; Quantum computation; Topological matter Group Team

We present thickness and temperature dependent magneto transport properties of bulk insulating and granular BiSbTeSe2 thin films, grown by pulsed laser deposition technique. The temperature dependent resistivity (R-T) of these films is found to be insulating (d ρ/dT <0) and resistivity changes thrice the magnitude measured at room temperature as temperature is varied from 300K to 1.8K. On application of small perpendicular magnetic field in the low temperature regime, the R-T takes an upward shift from the zero field R-T - a trademark signature of a metallic state on an insulating bulk film. The grain boundaries in these films, as seen by scanning electron microscopy, present an additional disorder and hence confinement/trapping centers to the surface Dirac states in comparison to the films grown by molecular beam epitaxy and single crystals, which have atomically flat surface. Therefore these films present real test for the topological protection of surface Dirac states and their immunity against localization which is known as Z2 protection. From the magnetoresistance (MR) measurements at low temperatures a sharp and relatively large rise in MR is found a signature of weak - antilocalization (WAL) -a signature of topologically protected surface states. The WAL analysis of the MR data reveals a phase breaking length of the order of grain size suggesting that grain Author is grateful to the Government of India and IISER-Kolkata for providing funding and experimental facilities for the following research work.

Novel Bi/BiOBr/AgBr composite microspheres: Ion exchange synthesis and photocatalytic performance

NASA Astrophysics Data System (ADS)

Lyu, Jianchang; Li, Zhenlu; Ge, Ming

2018-06-01

Novel Bi/BiOBr/AgBr composite microspheres were prepared by a rational in situ ion exchange reaction between Bi/BiOBr microspheres and AgNO3. The characteristic of the as-obtained ternary microspheres was tested by X-ray diffraction (XRD), energy dispersive X-ray spectrometer (EDS), scanning electron microscope (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), UV-vis diffuse reflectance spectroscopy (UV-vis DRS) and photoluminescence (PL). Under visible light irradiation, Bi/BiOBr/AgBr microspheres exhibited an excellent photocatalytic efficiency for rhodamine B (RhB) degradation, which was about 1.4 and 4.9 times as high as that of Bi/BiOBr and BiOBr/AgBr, demonstrating that the highest separation efficiency of charge carriers in the heterostructured Bi/BiOBr/AgBr. The photocatalytic activity of Bi/BiOBr/AgBr microspheres just exhibited a slight decrease after three consecutive cycles. The photocatalytic mechanism investigation confirmed that the superoxide radicals (O2•-) were the dominant reactive oxygen species for RhB degradation in Bi/BiOBr/AgBr suspension.

Thermomagnetic coolers based on Bi and Bi-Sb nanocomposites

NASA Astrophysics Data System (ADS)

Huber, Tito E.; Constant, Pierre

2001-02-01

Bulk Bi, a semimetal, and Bi-Sb, have the highest thermoelectric figure of merit Z at 100 K. The thermoelectric properties of these materials are strongly anisotropic. The best thermoelectric performance is observed when the electrical current flows along the trigonal axis. However, Bi single crystals are easily cleaved along the trigonal planes. This lack of strength has largely prevented the use of these materials in practical thermoelectric coolers. Composite technology offers the opportunity to increase the toughness of Bi and Bi-Sb. Also, microengineering Bi into composites may lead to a significant improvement in their thermoelectric performance, because of the reduction of phonon conductivity from phonon scattering at the grain boundaries and interfaces. It has been shown theoretically that quantum-wire structures have the potential to significantly improve Z over the bulk value. We have synthesized microwire composites and present measurements of its electrical conductivity and Seebeck coefficient that are very encouraging. The role that a tough thermoelectric cooler could have in extending the lifetime of a space system such as Space InfraRed Telescope Facility (SIRTF) is briefly discussed. .

Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM

NASA Astrophysics Data System (ADS)

Baladés, N.; Sales, D. L.; Herrera, M.; Tan, C. H.; Liu, Y.; Richards, R. D.; Molina, S. I.

2018-04-01

The Bi content in GaAs/GaAs1 - x Bi x /GaAs heterostructures grown by molecular beam epitaxy at a substrate temperature close to 340 °C is investigated by aberration-corrected high-angle annular dark-field techniques. The analysis at low magnification of high-angle annular dark-field scanning transmission electron microscopy images, corroborated by EDX analysis, revealed planar defect-free layers and a non-homogeneous Bi distribution at the interfaces and within the GaAsBi layer. At high magnification, the qHAADF analysis confirmed the inhomogeneous distribution and Bi segregation at the GaAsBi/GaAs interface at low Bi flux and distorted dumbbell shape in areas with higher Bi content. At higher Bi flux, the size of the Bi gathering increases leading to roughly equiaxial Bi-rich particles faceted along zinc blende {111} and uniformly dispersed around the matrix and interfaces. FFT analysis checks the coexistence of two phases in some clusters: a rhombohedral pure Bi (rh-Bi) one surrounded by a zinc blende GaAs1 - x Bi x matrix. Clusters may be affecting to the local lattice relaxation and leading to a partially relaxed GaAsBi/GaAs system, in good agreement with XRD analysis.

Facile Fabrication of BiOI/BiOCl Immobilized Films with Improved Visible Light Photocatalytic Performance

NASA Astrophysics Data System (ADS)

Zhong, Yingxian; Liu, Yuehua; Wu, Shuang; Zhu, Yi; Chen, Hongbin; Yu, Xiang; Zhang, Yuanming

2018-03-01

Photocatalysis has been considered to be one of the most promising ways to photodegrade organic pollutants. Herein, a series of BiOI/BiOCl films coating on FTO were fabricated through a simple method at room temperature. The photocatalytic efficiency of 30%BiOI/BiOCl could reach more than 99% aiming to degrading RhB and MB after 90 and 120 min, respectively. Compared with BiOCl, 30%BiOI/BiOCl showed 12 times higher efficiency when degrading RhB. In comparison with BiOI, 30%BiOI/BiOCl showed 5 and 6 times higher efficiency when degrading RhB and MB, respectively. These obvious enhancements were attributed to expanded visible light absorption and high separation performance of photoinduced charge. Moreover, the photocatalytic activity of 30%BiOI/BiOCl had no obvious decrease after 5 recycles, suggesting that it was a promising photocatalyst for the removal of MB and RhB pollutants. Finally, the possible growth process for the BiOI/BiOCl thin films and photocatalysis mechanism were investigated in details. This work would provide insight to the reasonable construction of BiOX heterojunction and the photocatalytic mechanism in degrading organic pollutants.

Spatial profile of thermoelectric effects during Peltier pulsing in Bi and Bi/MnBi eutectic

NASA Technical Reports Server (NTRS)

Silberstein, R. P.; Larson, D. J., Jr.

1987-01-01

The spatial profile of the thermal transients that occur during and following the current pulsing associated with Peltier Interface Demarcation during directional solidification is studied. Results for pure Bi are presented in detail and compared with corresponding results for the Bi/MnBi eutectic. Significant thermal transients occur throughout the sample that can be accounted for by the Peltier effect, the Thomson effect, and Joule heating. These effects are separated and their behavior is studied as a function of time, current density, and position with respect to the solid/liquid interface.

Anisotropic Dirac Fermions in BaMnBi2 and BaZnBi2

NASA Astrophysics Data System (ADS)

Ryu, Hyejin; Park, Se Young; Li, Lijun; Ren, Weijun; Petrovic, Cedomir; Hwang, Choonkyu; Mo, Sung-Kwan

We report electronic structures of BaMnBi2 and BaZnBi2 sharing similar structural properties but having different valence configuration of the Mn/Zn-Bi complex. Our angle-resolved photoemission measurements found a strong anisotropic Dirac dispersion in BaMnBi2 and a complete departure from the Dirac dispersion in BaZnBi2. Our findings, substantiated by the first principle calculations, allow us to understand role of Mn/Zn-Bi tetrahedra in the changes of the electronic structures as well as the effect of varying band filling of Bi-square net. Work at BNL was supported by the U.S. Dept of Energy-BES, Division of Materials Science and Engineering, under Contract No. DE-SC0012704 and Chinese Academy of Sciences under Grant No. KJZD-EW-M05.

Correlation of Hall and Shubnikov-de Haas Oscillations and Impurity States in Sn- and I- Doped Single Crystals p-Bi 2 Te 3

NASA Astrophysics Data System (ADS)

Tahar, M. Z.; Popov, D. I.; Nemov, S. A.

2018-03-01

Oscillations of the Hall coefficient and Shubnikov-de Haas (SdH) were observed in p-Bi2Te3 crystals doped with Sn (acceptor) and with I (donor) in magnetic fields up to 9 T parallel to the C3 trigonal axis at low temperatures (2 K < T < 20K), which is an evidence of the spatial homogeneity of carriers in complex solid solutions. This supports the existence of a narrow band of Sn states (partially filled) against the background of the valence band acting as a reservoir with high density of states partially filled with electrons. Previously, in these systems in which the Fermi level was in the light-hole valence band, both large Hall and SdH oscillations were observed, with ∼π phase shift between them, whereas when the Fermi level was in the heavy-hole valence band (larger acceptor content), no quantum oscillations were observed. It was concluded that the observed low amplitude quantum oscillations may be attributed to the shifting of the reservoir from the light-hole band to the heavy-hole, and the observed phase shift in the range 0 - π/2 between Hall and SdH oscillations may be attributed to filling factor of the reservoir with electrons, which varies with I content. Experimental results along with theoretical explanation of these correlations are presented.

One-step growth of nanosheet-assembled BiOCl/BiOBr microspheres for highly efficient visible photocatalytic performance

NASA Astrophysics Data System (ADS)

Zhang, Jinfeng; Lv, Jiali; Dai, Kai; Liang, Changhao; Liu, Qi

2018-02-01

In this work, we have developed a simple synthetic approach of nanosheet-assembled BiOCl/BiOBr microspheres by an ethylene glycol (EG)-assisted hydrothermal method. The crystalline form, morphology, chemical composition, optical performance and surface area of BiOCl/BiOBr microspheres were identified using X-ray diffraction (XRD), transmission electron microscopy (TEM), high resolution TEM (HRTEM), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy spectra (EDX), UV-vis diffuse reflectance spectroscopy (DRS) analysis, high resolution X-ray photoelectron spectra (XPS) and N2 adsorption-desorption isotherms. BiOCl/BiOBr microspheres were nanosheet-assembled particles, which possessed visible light absorption under LED light irridation. Additionally, the methylene blue (MB) photodegradation performance of different BiOCl/BiOBr microspheres irradiated under 410 nm LED light arrays were investigated, the results exhibited that as-prepared BiOCl/BiOBr products showed higher catalytic effiency than pure BiOCl or BiOBr. By optimizing the composition ration of the BiOCl and BiOBr, up to 93% degradation rate can be obtained in the 40%BiOCl/BiOBr microspheres. Finally, the photocatalytic mechanism of BiOCl/BiOBr microspheres had been proposed.

One-dimensional dielectric bi-periodic photonic structures based on ternary photonic crystals

NASA Astrophysics Data System (ADS)

Dadoenkova, Nataliya N.; Dadoenkova, Yuliya S.; Panyaev, Ivan S.; Sannikov, Dmitry G.; Lyubchanskii, Igor L.

2018-01-01

We investigate the transmittivity spectra, fields, and energy distribution of the electromagnetic eigenwaves propagating in a one-dimensional (1D) dielectric photonic crystal [(TiO2/SiO2)NAl2O3]M with two periods formed by unit cells TiO2/SiO2 and (TiO2/SiO2)NAl2O3. Spectra of TE- and TM-modes depend on the geometric parameters of the structure and undergo modifications with the change in the period numbers, layer thicknesses, and incidence angle. Special attention is paid to the applicability of the hybrid effective medium approximation comprising the long-wave approximation and two-dimensional (2 × 2) transfer matrix method. We demonstrate spectral peculiarities of the bi-periodic structure and also show the differences between the band gap spectra of the bi-periodic and ternary 1D dielectric photonic crystals. The presented photonic crystal structure can find its applications in optoelectronics and nanophotonics areas as omnidirectional reflectors, optical ultra-narrow bandpass filters, and antireflection coatings.

Laser angle-resolved photoemission as a probe of initial state k z dispersion, final-state band gaps, and spin texture of Dirac states in the Bi 2Te 3 topological insulator

DOE PAGES

Ärrälä, Minna; Hafiz, Hasnain; Mou, Daixiang; ...

2016-10-27

Here, we have obtained angle-resolved photoemission (ARPES) spectra from single crystals of the topological insulator material Bi 2Te 3 using tunable laser spectrometer. The spectra were collected for eleven different photon energies ranging from 5.57 to 6.70 eV for incident light polarized linearly along two different in-plane directions. Parallel first-principles, fully relativistic computations of photo-intensities were carried out using the experimental geometry within the framework of the one-step model of photoemission. Good overall accord between theory and experiment is used to gain insight into how properties of the initial and final state band structures as well as those of themore » topological surface states and their spin-textures are reflected in the laser-ARPES spectra. In conclusion, our analysis reveals that laser-ARPES is sensitive to both the initial state k z dispersion and the presence of delicate gaps in the final state electronic spectrum.« less

Thin-film metallic glass: an effective diffusion barrier for Se-doped AgSbTe2 thermoelectric modules

PubMed Central

Yu, Chia-Chi; Wu, Hsin-jay; Deng, Ping-Yuan; Agne, Matthias T.; Snyder, G. Jeffrey; Chu, Jinn P.

2017-01-01

The thermal stability of joints in thermoelectric (TE) modules, which are degraded during interdiffusion between the TE material and the contacting metal, needs to be addressed in order to utilize TE technology for competitive, sustainable energy applications. Herein, we deposit a 200 nm-thick Zr-based thin-film metallic glass (TFMG), which acts as an effective diffusion barrier layer with low electrical contact resistivity, on a high-zT Se-doped AgSbTe2 substrate. The reaction couples structured with TFMG/TE are annealed at 673 K for 8–360 hours and analyzed by electron microscopy. No observable IMCs (intermetallic compounds) are formed at the TFMG/TE interface, suggesting the effective inhibition of atomic diffusion that may be attributed to the grain-boundary-free structure of TFMG. The minor amount of Se acts as a tracer species, and a homogeneous Se-rich region is found nearing the TFMG/TE interface, which guarantees satisfactory bonding at the joint. The diffusion of Se, which has the smallest atomic volume of all the elements from the TE substrate, is found to follow Fick’s second law. The calculated diffusivity (D) of Se in TFMG falls in the range of D~10−20–10−23(m2/s), which is 106~107 and 1012~1013 times smaller than those of Ni [10−14–10−17(m2/s)] and Cu [10−8–10−11(m2/s)] in Bi2Te3, respectively. PMID:28327655

Three-Dimensional BiOI/BiOX (X = Cl or Br) Nanohybrids for Enhanced Visible-Light Photocatalytic Activity

PubMed Central

Liu, Yazi; Xu, Jian; Wang, Liqiong; Zhang, Huayang; Xu, Ping; Duan, Xiaoguang; Sun, Hongqi; Wang, Shaobin

2017-01-01

Three-dimensional flower-like BiOI/BiOX (X = Br or Cl) hybrids were synthesized via a facile one-pot solvothermal approach. With systematic characterizations by X-ray diffraction (XRD), scanning electron microscopy (SEM), Transmission electron microscopy (TEM), the Brunauer-Emmett-Teller (BET)specific surface area, X-ray photoelectron spectroscopy (XPS), and the UV-Vis diffuse reflectance spectra (DRS), the BiOI/BiOCl composites showed a fluffy and porous 3-D architecture with a large specific surface area (SSA) and high capability for light absorption. Among all the BiOX (X = Cl, Br, I) and BiOI/BiOX (X = Cl or Br) composites, BiOI/BiOCl stands out as the most efficient photocatalyst under both visible and UV light irradiations for methyl orange (MO) oxidation. The reaction rate of MO degradation on BiOI/BiOCl was 2.1 times higher than that on pure BiOI under visible light. Moreover, BiOI/BiOCl exhibited enhanced water oxidation efficiency for O2 evolution which was 1.5 times higher than BiOI. The enhancement of photocatalytic activity could be attributed to the formation of a heterojunction between BiOI and BiOCl, with a nanoporous structure, a larger SSA, and a stronger light absorbance capacity especially in the visible-light region. The in situ electron paramagnetic resonance (EPR) revealed that BiOI/BiOCl composites could effectively evolve superoxide radicals and hydroxyl radicals for photodegradation, and the superoxide radicals are the dominant reactive species. The superb photocatalytic activity of BiOI/BiOCl could be utilized for the degradation of various industrial dyes under natural sunlight irradiation which is of high significance for the remediation of industrial wastewater in the future. PMID:28336897

Magnetic properties of single-phase MnBi grown from MnBi{sub 49} melt

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, X. F.; Si, P. Z., E-mail: pzsi@cjlu.edu.cn; Feng, H.

2014-05-07

The single-phase NiAs-type MnBi, embedded in Bi matrix, was grown from homogeneous MnBi{sub 49} melt at low temperatures to prevent the formation of Mn{sub 1.08}Bi. An abrupt magnetization change was observed at ∼240 K. The origin of this change was ascribed to the movement of the Mn atoms between the regular sites and the interstitial sites in the MnBi lattices. The splitting of the x-ray photoelectron lines of MnBi indicates the presence of two binding states of Mn atoms, one of which was ascribed to interstitial Mn atoms. A large coercivity up to 1.79 T at 400 K was observed in the as-grownmore » bulk isotropic MnBi alloys.« less

Ab initio assessment of Bi1-xRExCuOS (RE = La, Gd, Y, Lu) solid solutions as a semiconductor for photochemical water splitting.

PubMed

Lardhi, Sheikha; Curutchet, Antton; Cavallo, Luigi; Harb, Moussab; Le Bahers, Tangui

2017-05-17

The investigation of the BiCuOCh (Ch = S, Se and Te) semiconductor family for thermoelectric or photovoltaic materials is a topic of increasing research interest. These materials can also be considered for photochemical water splitting if one representative having a bandgap, E g , at around 2 eV can be developed. With this aim, we simulated the solid solutions Bi 1-x RE x CuOS (RE = Y, La, Gd and Lu) from pure BiCuOS (E g ∼ 1.1 eV) to pure RECuOS compositions (E g ∼ 2.9 eV) by DFT calculations based on the HSE06 range-separated hybrid functional with the inclusion of spin-orbit coupling. Starting from the thermodynamic stability of the solid solution, several properties were computed for each system including bandgaps, dielectric constants, effective masses and exciton binding energies. We discussed the variation of these properties based on the relative organization of Bi and RE atoms in their common sublattice to offer a physical understanding of the influence of the RE doping of BiCuOS. Some compositions were found to give appropriate properties for water splitting applications. Furthermore, we found that at low RE fractions the transport properties of BiCuOS are improved that can find applications beyond water splitting.

Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films

PubMed Central

Bouška, M.; Pechev, S.; Simon, Q.; Boidin, R.; Nazabal, V.; Gutwirth, J.; Baudet, E.; Němec, P.

2016-01-01

Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as ~0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers. PMID:27199107

ReGaTE: Registration of Galaxy Tools in Elixir

PubMed Central

Mareuil, Fabien; Deveaud, Eric; Kalaš, Matúš; Soranzo, Nicola; van den Beek, Marius; Grüning, Björn; Ison, Jon; Ménager, Hervé

2017-01-01

Abstract Background: Bioinformaticians routinely use multiple software tools and data sources in their day-to-day work and have been guided in their choices by a number of cataloguing initiatives. The ELIXIR Tools and Data Services Registry (bio.tools) aims to provide a central information point, independent of any specific scientific scope within bioinformatics or technological implementation. Meanwhile, efforts to integrate bioinformatics software in workbench and workflow environments have accelerated to enable the design, automation, and reproducibility of bioinformatics experiments. One such popular environment is the Galaxy framework, with currently more than 80 publicly available Galaxy servers around the world. In the context of a generic registry for bioinformatics software, such as bio.tools, Galaxy instances constitute a major source of valuable content. Yet there has been, to date, no convenient mechanism to register such services en masse. Findings: We present ReGaTE (Registration of Galaxy Tools in Elixir), a software utility that automates the process of registering the services available in a Galaxy instance. This utility uses the BioBlend application program interface to extract service metadata from a Galaxy server, enhance the metadata with the scientific information required by bio.tools, and push it to the registry. Conclusions: ReGaTE provides a fast and convenient way to publish Galaxy services in bio.tools. By doing so, service providers may increase the visibility of their services while enriching the software discovery function that bio.tools provides for its users. The source code of ReGaTE is freely available on Github at https://github.com/C3BI-pasteur-fr/ReGaTE. PMID:28402416

ReGaTE: Registration of Galaxy Tools in Elixir.

PubMed

Doppelt-Azeroual, Olivia; Mareuil, Fabien; Deveaud, Eric; Kalaš, Matúš; Soranzo, Nicola; van den Beek, Marius; Grüning, Björn; Ison, Jon; Ménager, Hervé

2017-06-01

Bioinformaticians routinely use multiple software tools and data sources in their day-to-day work and have been guided in their choices by a number of cataloguing initiatives. The ELIXIR Tools and Data Services Registry (bio.tools) aims to provide a central information point, independent of any specific scientific scope within bioinformatics or technological implementation. Meanwhile, efforts to integrate bioinformatics software in workbench and workflow environments have accelerated to enable the design, automation, and reproducibility of bioinformatics experiments. One such popular environment is the Galaxy framework, with currently more than 80 publicly available Galaxy servers around the world. In the context of a generic registry for bioinformatics software, such as bio.tools, Galaxy instances constitute a major source of valuable content. Yet there has been, to date, no convenient mechanism to register such services en masse. We present ReGaTE (Registration of Galaxy Tools in Elixir), a software utility that automates the process of registering the services available in a Galaxy instance. This utility uses the BioBlend application program interface to extract service metadata from a Galaxy server, enhance the metadata with the scientific information required by bio.tools, and push it to the registry. ReGaTE provides a fast and convenient way to publish Galaxy services in bio.tools. By doing so, service providers may increase the visibility of their services while enriching the software discovery function that bio.tools provides for its users. The source code of ReGaTE is freely available on Github at https://github.com/C3BI-pasteur-fr/ReGaTE . © The Author 2017. Published by Oxford University Press.

Preparation and visible light photocatalytic activity of Bi2O3/Bi2WO6 heterojunction photocatalysts

NASA Astrophysics Data System (ADS)

Yan, C. Y.; Yi, W. T.; Xiong, J.; Ma, J.

2018-03-01

The Bi2O3 nanorods, flower-like Bi2WO6 and Bi2O3/Bi2WO6 heterojunction composites with the molar ratio of nBi:nW from 2:1, 2.5:1, to 3:1 have been synthesized via one-step hydrothermal method and two-step hydrothermal method, respectively. The products are characterized by powder X-ray diffraction (XRD), UV–vis diffuse reflectance spectroscopy (UV-vis DRS), and scanning electron microscopy (SEM). Photocatalytic experiments indicate that such Bi2O3/Bi2WO6 composite possesses higher photocatalytic activity for RhB degradation under visible-light irradiation in comparison with pure Bi2O3 and Bi2WO6. The enhancement of the photocatalytic activity of the Bi2O3/Bi2WO6 heterojunction catalysts can be ascribed to the reduced recombination of the photoexcited electrons and holes during the photocatalytic reaction. The effect of the molar ratio of nBi:nW on the catalytic performance of the heterojunction catalysts was also investigated. And the optimal molar ratio of nBi:nW is 2.5:1 which was synthesized by one-step hydrothermal method.

Magnetic interactions in BiFe0.5Mn0.5O3 films and BiFeO3/BiMnO3 superlattices

NASA Astrophysics Data System (ADS)

Xu, Qingyu; Sheng, Yan; Khalid, M.; Cao, Yanqiang; Wang, Yutian; Qiu, Xiangbiao; Zhang, Wen; He, Maocheng; Wang, Shuangbao; Zhou, Shengqiang; Li, Qi; Wu, Di; Zhai, Ya; Liu, Wenqing; Wang, Peng; Xu, Y. B.; Du, Jun

2015-03-01

The clear understanding of exchange interactions between magnetic ions in substituted BiFeO3 is the prerequisite for the comprehensive studies on magnetic properties. BiFe0.5Mn0.5O3 films and BiFeO3/BiMnO3 superlattices have been fabricated by pulsed laser deposition on (001) SrTiO3 substrates. Using piezoresponse force microscopy (PFM), the ferroelectricity at room temperature has been inferred from the observation of PFM hysteresis loops and electrical writing of ferroelectric domains for both samples. Spin glass behavior has been observed in both samples by temperature dependent magnetization curves and decay of thermo-remnant magnetization with time. The magnetic ordering has been studied by X-ray magnetic circular dichroism measurements, and Fe-O-Mn interaction has been confirmed to be antiferromagnetic (AF). The observed spin glass in BiFe0.5Mn0.5O3 films has been attributed to cluster spin glass due to Mn-rich ferromagnetic (FM) clusters in AF matrix, while spin glass in BiFeO3/BiMnO3 superlattices is due to competition between AF Fe-O-Fe, AF Fe-O-Mn and FM Mn-O-Mn interactions in the well ordered square lattice with two Fe ions in BiFeO3 layer and two Mn ions in BiMnO3 layer at interfaces.

Influence of Bi addition on the property of Ag-Bi nano-composite coatings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yuxin; Tay, See Leng; Zhou, Xiaowei

Silver (Ag) coatings have been widely used in many industry areas due to their excellent conductivity. However, wider applications of Ag coatings have been hindered by their poor mechanical properties. In this research, to improve the mechanical performance, Ag-Bi nano-composite coatings were prepared by a novel ionic co-discharge method. A systematic study of the microstructure, mechanical properties, electrical conductivity and antibacterial behavior of the resulting coating was performed. The results indicated that after adding an appropriate amount of Bi containing solution into the Ag plating solution, Ag-Bi nanoparticles were in-situ formed and distributed uniformly throughout the coating matrix, resulting inmore » a significant improvement in the mechanical properties. The hardness of Ag-Bi coating was increased by 60% compared to that of the pure Ag coating. The corrosion resistance of Ag-Bi coatings was also enhanced. The Ag-Bi coatings prepared in the current study will find a broader application in electronics, jewelry, aerospace and other industries.« less

Influence of Bi addition on the property of Ag-Bi nano-composite coatings

DOE PAGES

Wang, Yuxin; Tay, See Leng; Zhou, Xiaowei; ...

2018-03-26

Silver (Ag) coatings have been widely used in many industry areas due to their excellent conductivity. However, wider applications of Ag coatings have been hindered by their poor mechanical properties. In this research, to improve the mechanical performance, Ag-Bi nano-composite coatings were prepared by a novel ionic co-discharge method. A systematic study of the microstructure, mechanical properties, electrical conductivity and antibacterial behavior of the resulting coating was performed. The results indicated that after adding an appropriate amount of Bi containing solution into the Ag plating solution, Ag-Bi nanoparticles were in-situ formed and distributed uniformly throughout the coating matrix, resulting inmore » a significant improvement in the mechanical properties. The hardness of Ag-Bi coating was increased by 60% compared to that of the pure Ag coating. The corrosion resistance of Ag-Bi coatings was also enhanced. The Ag-Bi coatings prepared in the current study will find a broader application in electronics, jewelry, aerospace and other industries.« less

Superconductivity in Bi/Ni bilayer system: Clear role of superconducting phases found at Bi/Ni interface

NASA Astrophysics Data System (ADS)

Liu, L. Y.; Xing, Y. T.; Merino, I. L. C.; Micklitz, H.; Franceschini, D. F.; Baggio-Saitovitch, E.; Bell, D. C.; Solórzano, I. G.

2018-01-01

Bi/Ni bilayers with varying Bi and Ni layer thicknesses have been prepared by (a) pulsed-laser deposition (PLD) at 300 K and (b) thermal evaporation at 4.2 K. A two-step superconducting transition appears on the electrical transport measurements in the samples prepared by PLD. High-resolution transmission and scanning transmission electron microscopy, supported by energy-dispersive x-ray spectroscopy (EDXS) analysis, reveal that two superconducting intermetallic alloys, namely NiBi and NiBi3, are formed by interdiffusion, if the bilayers are prepared at 300 K. The Tc of the two phases behaves very differently in an external magnetic field and the upper critical magnetic fields at zero temperature [Bc 2(0 ) ] were estimated as 1.1 and 7.4 T, respectively. The lower value corresponds to the Bc 2(0) of NiBi3 phase and the higher one is supposed to be of NiBi. These alloys are responsible for the superconductivity and the two-step transition appearing in the Bi/Ni bilayer system. Surprisingly, the Bi-rich phase (NiBi3) is formed near the Ni layer, while the Ni-rich phase (NiBi) is formed far from the Ni layer. The EDXS analysis at nanometer scale clearly shows an unusual increase of Ni concentration near the interface of Bi/substrate. The limited thickness of Bi layer in the interdiffusion process results in an unexpected distribution of Ni concentration. Samples prepared at 4.2 K after annealing at 300 K do not show any superconductivity, which indicates that a nonepitaxial Bi/Ni interface does not induce superconductivity in the case interdiffusion does not occur. These results offer a deeper understanding of the superconductivity in the Bi/Ni bilayer system.

Bi-stem gripping apparatus

NASA Technical Reports Server (NTRS)

Sanders, Fred G. (Inventor)

1988-01-01

This invention relates to devices which grip cylindrical structures and more particularly to a device which has three arcuate gripping members having frictional surfaces for gripping and compressing a bi-stem. The bi-stem gripping apparatus is constructed having a pair of side gripping members, and an intermediate gripping member disposed between them. Sheets of a gum stock silicone rubber with frictional gripping surfaces are bonded to the inner region of the gripping members and provide frictional engagement between the bi-stem and the apparatus. A latch secures the gripping apparatus to a bi-stem, and removable handles are attached, allowing an astronaut to pull the bi-stem from its cassette. A tethering ring on the outside of the gripping apparatus provides a convenient point to which a lanyard may be attached.

Novel condensation of Au-centered trigonal prisms in rare-earth-metal-rich tellurides: Er7Au2Te2 and Lu7Au2Te2.

PubMed

Gupta, Shalabh; Corbett, John D

2010-07-14

A new monoclinic structure occurs for Er(7)Au(2)Te(2) according to X-ray diffraction analysis of single crystals grown at 1200 degrees C: C2/m, Z = 4, a = 17.8310(9) A, b = 3.9819(5) A, c = 16.9089(9) A, beta = 104.361(4) degrees. The isostructural Lu(7)Au(2)Te(2) also exists according to X-ray powder pattern means, a = 17.536(4) A, b = 3.9719(4) A, c = 16.695(2) A, beta = 104.33(1) degrees. The structure contains zigzag chains of condensed, Au-centered tricapped trigonal prisms (TCTP) of Er along c that also share basal faces along b to generate puckered sheets. Further bi-face-capping Er atoms between these generate the three dimensional network along a, with tellurium in cavities outlined by augmented trigonal prismatic Er polyhedra. Bonding analysis via LMTO-DFT methods reveal very significant Er-Au bonding interactions, as quantified by their energy-weighted Hamilton overlap populations (-ICOHP), approximately 49% of the total for all interactions. These and similar Er-Te contributions sharply contrast with the small Er-Er population, only approximately 14% of the total in spite of the high proportion of Er-Er contacts. The strong polar bonding of Er to the electronegative Au and Te leaves Er relatively oxidized, with many of its 5d states falling above the Fermi level and empty. The contradiction with customary representations of structures that highlight rare-earth metal clusters is manifest. The large Er-Au Hamilton overlap population is in accord with the strong bonding between early and late transition metals first noted by Brewer in 1973. The relationship of this structure to the more distorted orthorhombic (Imm2) structure type of neighboring Dy(7)Ir(2)Te(2) is considered.

BI-RADS update.

PubMed

Mercado, Cecilia L

2014-05-01

The updated American College of Radiology (ACR) Breast Imaging Reporting and Data System (BI-RADS) has been newly released. This article summarizes the changes and updates that have been made to BI-RADS. The goal of the revised edition continues to be the same: to improve clarification in image interpretation, maintain reporting standardization, and simplify the monitoring of outcomes. The new BI-RADS also introduces new terminology to provide a more universal lexicon across all 3 imaging modalities. Copyright © 2014 Elsevier Inc. All rights reserved.

Magnetic Cr doping of Bi2Se3: Evidence for divalent Cr from x-ray spectroscopy

NASA Astrophysics Data System (ADS)

Figueroa, A. I.; van der Laan, G.; Collins-McIntyre, L. J.; Zhang, S.-L.; Baker, A. A.; Harrison, S. E.; Schönherr, P.; Cibin, G.; Hesjedal, T.

2014-10-01

Ferromagnetically doped topological insulators with broken time-reversal symmetry are a prerequisite for observing the quantum anomalous Hall effect. Cr-doped (Bi,Sb)2(Se,Te)3 is the most successful materials system so far, as it combines ferromagnetic ordering with acceptable levels of additional bulk doping. Here, we report a study of the local electronic structure of Cr dopants in epitaxially grown Bi2Se3 thin films. Contrary to the established view that the Cr dopant is trivalent because it substitutionally replaces Bi3+, we find instead that Cr is divalent. This is evidenced by the energy positions of the Cr K and L2,3 absorption edges relative to reference samples. The extended x-ray absorption fine structure at the K edge shows that the Cr dopants substitute on octahedral sites with the surrounding Se ions contracted by Δd =-0.36 Å, in agreement with recent band structure calculations. Comparison of the Cr L2,3 x-ray magnetic circular dichroism at T =5 K with multiplet calculations gives a spin moment of 3.64 μB/Crbulk, which is close to the saturation moment for Cr2+ d4. The reduced Cr oxidation state in doped Bi2Se3 is ascribed to the formation of a covalent bond between Cr d (eg) and Se p orbitals, which is favored by the contraction of the Cr-Se distances.

Growth And Characterization Of LPE CdHgTe/CdZnTe/CdZnTe Structure

NASA Astrophysics Data System (ADS)

Pelliciari, B.; Chamonal, J. P.; Destefanis, G. L.; Dicioccio, L.

1988-05-01

The liquid phase epitaxial technique is used to grow Hgl_x Cdx Te (x = .23) from a Te - rich solution onto a Cdl_y ZnyTe (y = .04) buffer layer grown from a Te-rich solution onto a Cdi_yZnyTe bulk substrate in an open tube multibin horizontal slider apparatus.Growth conditions and physical characterizations of both the buffer layer and the CdHgTe layer are given ; electrical properties of the CdHgTe layer are also presen-ted. PV detectors were successfully obtained on such a structure using an ion-implanted technology and their characteristics at 77 K for a 10.1 ,um cut-off wavelength are given.

Comparative study of the compensated semi-metals LaBi and LuBi: a first-principles approach.

PubMed

Dey, Urmimala

2018-05-23

We have investigated the electronic structures of LaBi and LuBi, employing the full-potential all electron method as implemented in Wien2k. Using this, we have studied in detail both the bulk and the surface states of these materials. From our band structure calculations we find that LuBi, like LaBi, is a compensated semi-metal with almost equal and sizable electron and hole pockets. In analogy with experimental evidence in LaBi, we thus predict that LuBi will also be a candidate for extremely large magneto-resistance (XMR), which should be of immense technological interest. Our calculations reveal that LaBi, despite being gapless in the bulk spectrum, displays the characteristic features of a [Formula: see text] topological semi-metal, resulting in gapless Dirac cones on the surface, whereas LuBi only shows avoided band inversion in the bulk and is thus a conventional compensated semi-metal with extremely large magneto-resistance.

Comparative study of the compensated semi-metals LaBi and LuBi: a first-principles approach

NASA Astrophysics Data System (ADS)

Dey, Urmimala

2018-05-01

We have investigated the electronic structures of LaBi and LuBi, employing the full-potential all electron method as implemented in Wien2k. Using this, we have studied in detail both the bulk and the surface states of these materials. From our band structure calculations we find that LuBi, like LaBi, is a compensated semi-metal with almost equal and sizable electron and hole pockets. In analogy with experimental evidence in LaBi, we thus predict that LuBi will also be a candidate for extremely large magneto-resistance (XMR), which should be of immense technological interest. Our calculations reveal that LaBi, despite being gapless in the bulk spectrum, displays the characteristic features of a topological semi-metal, resulting in gapless Dirac cones on the surface, whereas LuBi only shows avoided band inversion in the bulk and is thus a conventional compensated semi-metal with extremely large magneto-resistance.

Study of temperature dependent electrical properties of Se80-xTe20Bix (x = 0, 3, 6) glasses

NASA Astrophysics Data System (ADS)

Deepika, Singh, Hukum

2018-05-01

This paper reports the variation in electrical properties of Se80-xTe20Bix (x = 0, 3, 6) glasses studied at different temperatures. The amorphous samples were prepared using the melt quenching method and the electrical measurements were performed on Keithley Electrometer in the temperature ranging from 298-373 K. The I-V characteristics were noted at different temperatures and the data obtained was analysed to get dc electrical conductivity and activation energy of electrical conduction. Further, Mott's 3D VRH model has been applied to obtain density of states, hopping range and hopping energy at different temperatures. The obtained results show that dc electrical conductivity increases with increase in Bi composition in Se-Te system. These compositions also show close agreement to Mott's VRH model.

125Te NMR chemical-shift trends in PbTe–GeTe and PbTe–SnTe alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Njegic, Bosiljka; Levin, Evgenii M.; Schmidt-Rohr, Klaus

2013-10-08

Complex tellurides, such as doped PbTe, GeTe, and their alloys, are among the best thermoelectric materials. Knowledge of the change in 125Te NMR chemical shift due to bonding to dopant or “solute” atoms is useful for determination of phase composition, peak assignment, and analysis of local bonding. We have measured the 125Te NMR chemical shifts in PbTe-based alloys, Pb 1-xGe xTe and Pb 1-xSn xTe, which have a rocksalt-like structure, and analyzed their trends. For low x, several peaks are resolved in the 22-kHz MAS 125Te NMR spectra. A simple linear trend in chemical shifts with the number of Pbmore » neighbors is observed. No evidence of a proposed ferroelectric displacement of Ge atoms in a cubic PbTe matrix is detected at low Ge concentrations. The observed chemical shift trends are compared with the results of DFT calculations, which confirm the linear dependence on the composition of the first-neighbor shell. The data enable determination of the composition of various phases in multiphase telluride materials. They also provide estimates of the 125Te chemical shifts of GeTe and SnTe (+970 and +400±150 ppm, respectively, from PbTe), which are otherwise difficult to access due to Knight shifts of many hundreds of ppm in neat GeTe and SnTe.« less

Thermochemical properties of silver tellurides including empressite (AgTe) and phase diagrams for Ag-Te and Ag-Te-O

NASA Astrophysics Data System (ADS)

Voronin, Mikhail V.; Osadchii, Evgeniy G.; Brichkina, Ekaterina A.

2017-10-01

This study compiles original experimental and literature data on the thermodynamic properties (ΔfG°, S°, ΔfH°) of silver tellurides (α-Ag2Te, β-Ag2Te, Ag1.9Te, Ag5Te3, AgTe) obtained by the method of solid-state galvanic cell with the RbAg4I5 and AgI solid electrolytes. The thermodynamic data for empressite (AgTe, pure fraction from Empress Josephine Mine, Colorado USA) have been obtained for the first time by the electrochemical experiment with the virtual reaction Ag + Te = AgTe. The Ag-Te phase diagrams in the T - x and log fTe2 (gas) - 1/ T coordinates have been refined, and the ternary Ag-Te-O diagrams with Ag-Te-TeO2 (paratellurite) composition range have been calculated.

Magnetic properties of solid solutions between BiCrO3 and BiGaO3 with perovskite structures

NASA Astrophysics Data System (ADS)

Belik, Alexei A.

2015-04-01

Magnetic properties of BiCr1-xGaxO3 perovskite-type solid solutions are reported, and a magnetic phase diagram is established. As-synthesized BiCrO3 and BiCr0.9Ga0.1O3 crystallize in a monoclinic (m) C2/c structure. The Néel temperature (TN) decreases from 111 K in BiCrO3 to 98 K in BiCr0.9Ga0.1O3, and spin-reorientation transition temperature increases from 72 K in BiCrO3 to 83 K in BiCr0.9Ga0.1O3. o-BiCr0.9Ga0.1O3 with a PbZrO3-type orthorhombic structure is obtained by heating m-BiCr0.9Ga0.1O3 up to 573 K in air; it shows similar magnetic properties with those of m-BiCr0.9Ga0.1O3. TN of BiCr0.8Ga0.2O3 is 81 K, and TN of BiCr0.7Ga0.3O3 is 63 K. Samples with x = 0.4, 0.5, 0.6 and 0.7 crystallize in a polar R3c structure. Long-range antiferromagnetic order with weak ferromagnetism is observed below TN = 56 K in BiCr0.6Ga0.4O3, TN = 36 K in BiCr0.5Ga0.5O3 and TN = 18 K in BiCr0.4Ga0.6O3. BiCr0.3Ga0.7O3 shows a paramagnetic behaviour because the Cr concentration is below the percolation threshold of 31%.

Magnetotransport study of Dirac fermions in YbMnBi2 and CaMnBi2

NASA Astrophysics Data System (ADS)

Wang, Aifeng; Zaliznyak, Igor; Graf, David; Ren, Weijun; Wang, Kefeng; Wu, Lijun; Garlea, Ovidiu; Warren, John; Bozin, Emil; Zhu, Yimei; Petrovic, Cedomir

It is well known that AMnBi2 (A = alkaline earth) with two dimensional (2D) bismuth layer host quasi-2D Dirac states similar to graphene and topological insulators. The Dirac state is significantly affected by the alkaline earth in the block layer. Angle-resolved photoemission spectroscopy (ARPES) indicates that YbMnBi2 could be the first Weyl semimetal with time-reversal symmetry breaking, whereas the anisotropic Dirac state in SrMnBi2 can host a valley-polarized interlayer current through magnetic valley control. Here, we study in-plane magnetotransport in YbMnBi2, and interlayer magnetotransport in CaMnBi2. The angular-dependent magnetoresistance, nonzero Berry phase, and small cyclotron mass confirm the presence of Dirac fermion and quasi-2D fermi surface in YbMnBi2. The interlayer electronic transport in CaMnBi2 suggest valley polarized conduction and a Dirac state on the side wall of the warped cylindrical Fermi surface of CaMnBi2. Work at BNL was supported by the U.S. Department of Energy-BES, Division of Materials Science and Engineering, under Contract No. DE-SC0012704. Work at the National High Magnetic Field Laboratory is supported by the NSF Cooperative Agreement No. DMR-06541.

Enhancement of magnetic circular dichroism in bi-layered ZnO-Bi:YIG thin films

NASA Astrophysics Data System (ADS)

Mito, Shinichiro; Shiotsu, Yusaku; Sasano, Junji; Takagi, Hiroyuki; Inoue, Mitsuteru

2017-05-01

Bi-layered zinc oxide (ZnO) and bismuth substituted yttrium iron garnet (Bi:YIG) was fabricated and magneto-optically investigated. Enhancement of Faraday rotation and magnetic circular dichroism (MCD) was observed. The wavelength of MCD enhancement was in good agreement with exciton wavelength of ZnO. This enhancement was only observed in the bi-layer, and implies that the exciton generated in ZnO interacted with Bi:YIG. Because the exciton wavelength of ZnO can be controlled by electro-optic effect, this result has the potential for realizing voltage control of magneto-optic effect.

Te/C nanocomposites for Li-Te Secondary Batteries

NASA Astrophysics Data System (ADS)

Seo, Jeong-Uk; Seong, Gun-Kyu; Park, Cheol-Min

2015-01-01

New battery systems having high energy density are actively being researched in order to satisfy the rapidly developing market for longer-lasting mobile electronics and hybrid electric vehicles. Here, we report a new Li-Te secondary battery system with a redox potential of ~1.7 V (vs. Li+/Li) adapted on a Li metal anode and an advanced Te/C nanocomposite cathode. Using a simple concept of transforming TeO2 into nanocrystalline Te by mechanical reduction, we designed an advanced, mechanically reduced Te/C nanocomposite electrode material with high energy density (initial discharge/charge: 1088/740 mA h cm-3), excellent cyclability (ca. 705 mA h cm-3 over 100 cycles), and fast rate capability (ca. 550 mA h cm-3 at 5C rate). The mechanically reduced Te/C nanocomposite electrodes were found to be suitable for use as either the cathode in Li-Te secondary batteries or a high-potential anode in rechargeable Li-ion batteries. We firmly believe that the mechanically reduced Te/C nanocomposite constitutes a breakthrough for the realization and mass production of excellent energy storage systems.

Near-infrared emission bands of TeH and TeD

NASA Astrophysics Data System (ADS)

Fink, E. H.; Setzer, K. D.; Ramsay, D. A.; Vervloet, M.

1989-11-01

High-resolution emission spectra of TeH and TeD have been obtained in the region 4200 to 3600 cm -1 using a Bomem DA3.002 Fourier transform spectrometer. Analyses are given for the 0-0 and 1-1 bands of the X 22Π{1}/{2}-X 12Π{3}/{2} system of TeH and for the 0-0 band of TeD. In addition the 2-0 vibrational overtone bands of 130TeH, 128TeH, and 126TeH are observed and analyzed. Accurate molecular constants are given for the first time.

Enhanced photoactivity of BiPO4/(001) facet-dominated square BiOBr flakes by combining heterojunctions with facet engineering effects

NASA Astrophysics Data System (ADS)

Shi, Jingzhi; Meng, Xiangying; Hao, Mengjian; Cao, Zhenzhu; He, Weiyan; Gao, Yanfang; Liu, Jinrong

2018-02-01

In this study, BiPO4/highly (001) facet exposed square BiOBr flake heterojunction photocatalysts with different molar ratios were fabricated via a two-step method. The synergetic effect of the heterojunction and facet engineering was systematically investigated. The physicochemical properties of the BiPO4/square BiOBr flake composites were characterized based on X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, Brunauer-Emmett-Teller method, X-ray photoelectron spectroscopy, ultraviolet-visible diffuse reflectance spectra, photoluminescence, electrochemical impedance spectroscopy, and the photocurrent response. The BiPO4/square BiOBr flake heterojunction photocatalyst exhibited much higher photocatalytic performance compared with the individual BiPO4 and BiOBr. In particular, the BiPO4/BiOBr composite where P/Br = 1/3 exhibited the highest photocatalytic activity. The intensified separation of photoinduced charges at the p-n heterojunction between the BiPO4 nanoparticle and (001) facet of BiOBr was mainly responsible for the enhanced photoactivity.

Codoping of Sb2Te3 thin films with V and Cr

NASA Astrophysics Data System (ADS)

Duffy, L. B.; Figueroa, A. I.; van der Laan, G.; Hesjedal, T.

2017-11-01

Magnetically doped topological insulators (TIs) are key to realizing the quantum anomalous Hall (QAH) effect, with the prospect of enabling dissipationless electronic devices in the future. Doping of the well-established three-dimensional TIs of the (Bi,Sb) 2(Se,Te) 3 family with the transition metals Cr and V is now an established approach for observing the QAH state at very low temperatures. While the magnetic transition temperatures of these materials are on the order of tens of degrees Kelvin, full quantization of the QAH state is achieved below ˜100 mK, governed by the size of the magnetic gap and thus the out-of-plane magnetic moment. In an attempt to raise the size of the magnetic moment and transition temperature, we carried out a structural and magnetic investigation of codoped (V,Cr):Sb2Te3 thin films. Starting from singly doped Cr:Sb2Te3 films, free of secondary phases and with a transition temperature of ˜72 K, we introduced increasing fractions of V and found a doubling of the transition temperature, while the magnetic moment decreases. In order to separate the properties and contributions of the two transition metals in the complex doping scenario independently, we employed spectroscopic x-ray techniques. Surprisingly, already small amounts of V lead to the formation of the secondary phase Cr2Te3 . No V was detectable in the Sb2Te3 matrix. Instead, it acts as a surfactant and can be found in the near-surface layers at the end of the growth. Our paper highlights the importance of x-ray-based studies for the doping of van der Waals systems, for which the optimization of magnetic moment or transition temperature alone is not necessarily a good strategy.

Magnetic properties of new antiferromagnetic heavy-fermion compounds, Ce3TiBi5 and CeTi3Bi4

NASA Astrophysics Data System (ADS)

Motoyama, Gaku; Sezaki, Masumi; Gouchi, Jun; Miyoshi, Kiyotaka; Nishigori, Shijo; Mutou, Tetsuya; Fujiwara, Kenji; Uwatoko, Yoshiya

2018-05-01

We have succeeded in growing single crystals of hexagonal P63 / mcm Ce3TiBi5 and orthorhombic Fmmm CeTi3Bi4 by the Bi self-flux method. Measurements of electrical resistivity, magnetic susceptibility, and specific heat have been made on Ce3TiBi5 and CeTi3Bi4. The results indicate that both Ce3TiBi5 and CeTi3Bi4 are new Ce compounds with an antiferromagnetic ordering temperature of 5.0 and 3.4 K, respectively.

DFT study on the interfacial properties of vertical and in-plane BiOI/BiOIO3 hetero-structures.

PubMed

Dai, Wen-Wu; Zhao, Zong-Yan

2017-04-12

Composite photocatalysts with hetero-structures usually favor the effective separation of photo-generated carriers. In this study, BiOIO 3 was chosen to form a hetero-structure with BiOI, due to its internal polar field and good lattice matching with BiOI. The interfacial properties and band offsets were focused on and analyzed in detail by DFT calculations. The results show that the charge depletion and accumulation mainly occur in the region near the interface. This effect leads to an interfacial electric field and thus, the photo-generated electron-hole pairs can be easily separated and transferred along opposite directions at the interface, which is significant for the enhancement of the photocatalytic activity. Moreover, according to the analysis of band offsets, the vertical BiOI/BiOIO 3 belongs to the type-II hetero-structure, while the in-plane BiOI/BiOIO 3 belongs to the type-I hetero-structure. The former type of hetero-structure has more favorable effects to enhance the photocatalytic activity of BiOI than that of the latter type of hetero-structure. In the case of the vertical BiOI/BiOIO 3 hetero-structure, photo-generated electrons can move from the conduction band of BiOI to that of BiOIO 3 , while holes can move from the valence band of BiOIO 3 to that of BiOI under solar radiation. In addition, the introduced internal electric field functions as a selector that can promote the separation of photo-generated carriers, resulting in the higher photocatalytic quantum efficiency. These findings illustrate the underlying mechanism for the reported experiments, and can be used as a basis for the design of novel highly efficient composite photocatalysts with hetero-structures.

Preparation and visible-light photocatalytic properties of BiNbO₄ and BiTaO₄ by a citrate method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhai, Hai-Fa, E-mail: haifazhai@126.com; Li, Ai-Dong, E-mail: adli@nju.edu.cn; Kong, Ji-Zhou

2013-06-01

Visible-light photcatalysts of BiNbO₄ and BiTaO₄ powders have been successfully synthesized by a citrate method. The formation of pure triclinic phase of BiNbO₄ and BiTaO₄ at low temperature of 700 °C can be attributed to the advantage of the citrate method. The photocatalytic activity and possible mechanism were investigated deeply. For BiNbO₄ particles, the mechanism of methyl violet (MV) degradation under visible light irradiation involves photocatalytic and photosensitization pathways and the catalyst specific surface area has dominant influence. While for BiTaO₄ particles, the dominant mechanism arises from photosensitization pathways and a trade off between high specific surface area and goodmore » crystallinity is achieved. BiNbO₄ powder calcined at 700 °C shows the best photocatalytic efficiency among these catalysts, which is ascribed to its large surface area and more positive conduction band level. The optimal catalyst loading, additive H₂O₂ concentration and pH value is around 1 g/L, 2 mmol/L and 8 mmol/L, respectively. - Graphical abstract: Photodegradation performance and adsorption ability of BiNbO₄ and BiTaO₄ powders, respectively. BNO700 with the best photocatalytic efficiency is ascribed to its large surface area and more positive conduction band level. Highlights: • Pure BiNbO₄ and BiTaO₄ powders were prepared by a citrate method. • Excellent performance of visible-light degradation of MV was observed. • Different MV degradation mechanism for BiNbO₄ and BiTaO₄ powders was proposed. • BNO700 has large surface area and more positive conduction band level.« less

Effect of preparation procedure and nanostructuring on the thermoelectric properties of the lead telluride-based material system AgPb{sub m}BiTe{sub 2+m} (BLST-m)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Falkenbach, Oliver; Koch, Guenter; Schlecht, Sabine

2016-06-07

We report on the preparation and thermoelectric properties of the quaternary system AgPb{sub m}BiTe{sub 2+m} (Bismuth-Lead-Silver-Tellurium, BLST-m) that were nanostructured by mechanical alloying. Nanopowders of various compositions were compacted by three different methods: cold pressing/annealing, hot pressing, and short term sintering. The products are compared with respect to microstructure and sample density. The thermoelectric properties were measured: thermal conductivity in the temperature range from 300 K to 800 K and electrical conductivity and Seebeck coefficient between 100 K and 800 K. The compacting method and the composition had a substantial impact on carrier concentration and mobility as well as on the thermoelectric parameters. Roommore » temperature Hall measurements yielded carrier concentrations in the order of 10{sup 19 }cm{sup −3}, slightly increasing with increasing content of the additive silver bismuth telluride to the lead telluride base. ZT values close to the ones of bulk samples were achieved. X-ray diffraction and transmission electron microscopy (TEM) showed macroscopically homogeneous distributions of the constituting elements inside the nanopowders ensembles, indicating a solid solution. However, high resolution transmission electron microscopy (HRTEM) revealed disorder on the nanoscale inside individual nanopowders grains.« less

Chromium-induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films

NASA Astrophysics Data System (ADS)

Wang, Fei; Zhang, Hongrui; Jiang, Jue; Zhao, Yi-Fan; Yu, Jia; Liu, Wei; Li, Da; Chan, Moses H. W.; Sun, Jirong; Zhang, Zhidong; Chang, Cui-Zu

2018-03-01

Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTi O3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8 ) 2T e3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12 DL S n0.9C r0.1Te film is ˜110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12 DL S n0.9C r0.1Te film is substantially lower than the predicted quantized value (˜1 /4 h /e2 ). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.

Partial Pressures of Te2 and Thermodynamic Properties of Ga-Te System

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Curreri, Peter A. (Technical Monitor)

2001-01-01

The partial pressures of Te2 in equilibrium with Ga(1-x)Te(x) samples were measured by optical absorption technique from 450 to 1100 C for compositions, x, between 0.333 and 0.612. To establish the relationship between the partial pressure of Te, and the measured optical absorbance, the calibration runs of a pure Te sample were also conducted to determine the Beer's Law constants. The partial pressures of Te2 in equilibrium with the GaTe(s) and Ga2Te3(s)compounds, or the so-called three-phase curves, were established. These partial pressure data imply the existence of the Ga3Te4(s) compound. From the partial pressures of Te2 over the Ga-Te melts, partial molar enthalpy and entropy of mixing for Te were derived and they agree reasonable well with the published data. The activities of Te in the Ga-Te melts were also derived from the measured partial pressures of Te2. These data agree well with most of the previous results. The possible reason for the high activity of Te measured for x less than 0.60 is discussed.

Reorientation of the diagonal double-stripe spin structure at Fe 1+yTe bulk and thin-film surfaces

DOE PAGES

Hanke, Torben; Singh, Udai Raj; Cornils, Lasse; ...

2017-01-06

Here, establishing the relation between ubiquitous antiferromagnetism in the parent compounds of unconventional superconductors and their superconducting phase is important for understanding the complex physics in these materials. Going from bulk systems to thin films additionally affects their phase diagram. For Fe 1+yTe, the parent compound of Fe 1+ySe 1$-x$Tex superconductors, bulk-sensitive neutron diffraction revealed an in-plane oriented diagonal double-stripe antiferromagnetic spin structure. Here we show by spin-resolved scanning tunnelling microscopy that the spin direction at the surfaces of bulk Fe 1+yTe and thin films grown on the topological insulator Bi 2Te 3 is canted out of the high-symmetry directionsmore » of the surface unit cell resulting in a perpendicular spin component, keeping the diagonal double-stripe order. As the magnetism of the Fe d-orbitals is intertwined with the superconducting pairing in Fe-based materials, our results imply that the superconducting properties at the surface of the related superconducting compounds might be different from the bulk.« less

Reorientation of the diagonal double-stripe spin structure at Fe 1+yTe bulk and thin-film surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hanke, Torben; Singh, Udai Raj; Cornils, Lasse

Here, establishing the relation between ubiquitous antiferromagnetism in the parent compounds of unconventional superconductors and their superconducting phase is important for understanding the complex physics in these materials. Going from bulk systems to thin films additionally affects their phase diagram. For Fe 1+yTe, the parent compound of Fe 1+ySe 1$-x$Tex superconductors, bulk-sensitive neutron diffraction revealed an in-plane oriented diagonal double-stripe antiferromagnetic spin structure. Here we show by spin-resolved scanning tunnelling microscopy that the spin direction at the surfaces of bulk Fe 1+yTe and thin films grown on the topological insulator Bi 2Te 3 is canted out of the high-symmetry directionsmore » of the surface unit cell resulting in a perpendicular spin component, keeping the diagonal double-stripe order. As the magnetism of the Fe d-orbitals is intertwined with the superconducting pairing in Fe-based materials, our results imply that the superconducting properties at the surface of the related superconducting compounds might be different from the bulk.« less

Topological interface states in the natural heterostructure (PbSe)5(Bi2Se3 )6 with BiPb defects

NASA Astrophysics Data System (ADS)

Momida, Hiroyoshi; Bihlmayer, Gustav; Blügel, Stefan; Segawa, Kouji; Ando, Yoichi; Oguchi, Tamio

2018-01-01

We study theoretically the electronic band structure of (PbSe) 5(Bi2Se3 )6, which consists of an ordinary insulator PbSe and a topological insulator Bi2Se3 . The first-principles calculations show that this material has a gapped Dirac-cone energy dispersion inside the bulk, which originates from the topological states of Bi2Se3 layers encapsulated by PbSe layers. Furthermore, we calculate the band structures of (BixPb1 -xSe )5(Bi2Se3 )6 with BiPb antisite defects included in the PbSe layers. The result shows that a high density of BiPb defects can exist in real materials, consistent with the experimentally estimated x of more than 30%. The BiPb defects strongly modify the band alignment between Bi2Se3 and PbSe layers, while the topological interface states of Bi2Se3 are kept as a gapped Dirac-cone-like dispersion.

Exploratory Bi-factor Analysis: The Oblique Case.

PubMed

Jennrich, Robert I; Bentler, Peter M

2012-07-01

Bi-factor analysis is a form of confirmatory factor analysis originally introduced by Holzinger and Swineford (Psychometrika 47:41-54, 1937). The bi-factor model has a general factor, a number of group factors, and an explicit bi-factor structure. Jennrich and Bentler (Psychometrika 76:537-549, 2011) introduced an exploratory form of bi-factor analysis that does not require one to provide an explicit bi-factor structure a priori. They use exploratory factor analysis and a bifactor rotation criterion designed to produce a rotated loading matrix that has an approximate bi-factor structure. Among other things this can be used as an aid in finding an explicit bi-factor structure for use in a confirmatory bi-factor analysis. They considered only orthogonal rotation. The purpose of this paper is to consider oblique rotation and to compare it to orthogonal rotation. Because there are many more oblique rotations of an initial loading matrix than orthogonal rotations, one expects the oblique results to approximate a bi-factor structure better than orthogonal rotations and this is indeed the case. A surprising result arises when oblique bi-factor rotation methods are applied to ideal data.

Imaging Dirac-mass disorder from magnetic dopant atoms in the ferromagnetic topological insulator Crx(Bi0.1Sb0.9)2-xTe3.