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Sample records for nanocrystal nonvolatile memory

  1. Nickel nanocrystal formation on HfO2 dielectric for nonvolatile memory device applications

    NASA Astrophysics Data System (ADS)

    Lee, Jong Jin; Harada, Yoshinao; Pyun, Jung Woo; Kwong, Dim-Lee

    2005-03-01

    This letter presents the formation of nickel nanocrystal on HfO2 high-k dielectric and its application to the nonvolatile memory devices. The effects of the initial nickel layer thickness and annealing temperature on nickel nanocrystal formation are investigated. The n-metal-oxide-semiconductor field-effect transistor with nickel nanocrystals and HfO2 tunneling dielectrics is fabricated and its programming, data retention, and endurance properties are characterized to demonstrate its advantages for nonvolatile memory device applications.

  2. Effects of Heavy Ion Exposure on Nanocrystal Nonvolatile Memory

    NASA Technical Reports Server (NTRS)

    Oldham, Timothy R.; Suhail, Mohammed; Kuhn, Peter; Prinz, Erwin; Kim, Hak; LaBel, Kenneth A.

    2004-01-01

    We have irradiated engineering samples of Freescale 4M nonvolatile memories with heavy ions. They use Silicon nanocrystals as the storage element, rather than the more common floating gate. The irradiations were performed using the Texas A&M University cyclotron Single Event Effects Test Facility. The chips were tested in the static mode, and in the dynamic read mode, dynamic write (program) mode, and dynamic erase mode. All the errors observed appeared to be due to single, isolated bits, even in the program and erase modes. These errors appeared to be related to the micro-dose mechanism. All the errors corresponded to the loss of electrons from a programmed cell. The underlying physical mechanisms will be discussed in more detail later. There were no errors, which could be attributed to malfunctions of the control circuits. At the highest LET used in the test (85 MeV/mg/sq cm), however, there appeared to be a failure due to gate rupture. Failure analysis is being conducted to confirm this conclusion. There was no unambiguous evidence of latchup under any test conditions. Generally, the results on the nanocrystal technology compare favorably with results on currently available commercial floating gate technology, indicating that the technology is promising for future space applications, both civilian and military.

  3. A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement.

    PubMed

    Kim, Jaemin; Son, Donghee; Lee, Mincheol; Song, Changyeong; Song, Jun-Kyul; Koo, Ja Hoon; Lee, Dong Jun; Shim, Hyung Joon; Kim, Ji Hoon; Lee, Minbaek; Hyeon, Taeghwan; Kim, Dae-Hyeong

    2016-01-01

    Strategies for efficient charge confinement in nanocrystal floating gates to realize high-performance memory devices have been investigated intensively. However, few studies have reported nanoscale experimental validations of charge confinement in closely packed uniform nanocrystals and related device performance characterization. Furthermore, the system-level integration of the resulting devices with wearable silicon electronics has not yet been realized. We introduce a wearable, fully multiplexed silicon nonvolatile memory array with nanocrystal floating gates. The nanocrystal monolayer is assembled over a large area using the Langmuir-Blodgett method. Efficient particle-level charge confinement is verified with the modified atomic force microscopy technique. Uniform nanocrystal charge traps evidently improve the memory window margin and retention performance. Furthermore, the multiplexing of memory devices in conjunction with the amplification of sensor signals based on ultrathin silicon nanomembrane circuits in stretchable layouts enables wearable healthcare applications such as long-term data storage of monitored heart rates.

  4. A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement

    PubMed Central

    Kim, Jaemin; Son, Donghee; Lee, Mincheol; Song, Changyeong; Song, Jun-Kyul; Koo, Ja Hoon; Lee, Dong Jun; Shim, Hyung Joon; Kim, Ji Hoon; Lee, Minbaek; Hyeon, Taeghwan; Kim, Dae-Hyeong

    2016-01-01

    Strategies for efficient charge confinement in nanocrystal floating gates to realize high-performance memory devices have been investigated intensively. However, few studies have reported nanoscale experimental validations of charge confinement in closely packed uniform nanocrystals and related device performance characterization. Furthermore, the system-level integration of the resulting devices with wearable silicon electronics has not yet been realized. We introduce a wearable, fully multiplexed silicon nonvolatile memory array with nanocrystal floating gates. The nanocrystal monolayer is assembled over a large area using the Langmuir-Blodgett method. Efficient particle-level charge confinement is verified with the modified atomic force microscopy technique. Uniform nanocrystal charge traps evidently improve the memory window margin and retention performance. Furthermore, the multiplexing of memory devices in conjunction with the amplification of sensor signals based on ultrathin silicon nanomembrane circuits in stretchable layouts enables wearable healthcare applications such as long-term data storage of monitored heart rates. PMID:26763827

  5. Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

    NASA Astrophysics Data System (ADS)

    Yu, Jie; Chen, Kun-ji; Ma, Zhong-yuan; Zhang, Xin-xin; Jiang, Xiao-fan; Wu, Yang-qing; Huang, Xin-fan; Oda, Shunri

    2016-09-01

    Based on the charge storage mode, it is important to investigate the scaling dependence of memory performance in silicon nanocrystal (Si-NC) nonvolatile memory (NVM) devices for its scaling down limit. In this work, we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor (CMOS) technology. It is found that the memory windows of eight kinds of test key cells are almost the same of about 1.64 V @ ± 7 V/1 ms, which are independent of the gate area, but mainly determined by the average size (12 nm) and areal density (1.8 × 1011/cm2) of Si-NCs. The program/erase (P/E) speed characteristics are almost independent of gate widths and lengths. However, the erase speed is faster than the program speed of test key cells, which is due to the different charging behaviors between electrons and holes during the operation processes. Furthermore, the data retention characteristic is also independent of the gate area. Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration. Project supported by the State Key Development Program for Basic Research of China (Grant No. 2010CB934402) and the National Natural Science Foundation of China (Grant Nos. 11374153, 61571221, and 61071008).

  6. A Radiation-Tolerant, Low-Power Non-Volatile Memory Based on Silicon Nanocrystal Quantum Dots

    NASA Technical Reports Server (NTRS)

    Bell, L. D.; Boer, E. A.; Ostraat, M. L.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.; deBlauwe, J.; Green, M. L.

    2001-01-01

    Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO2 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled in program/erase threshold voltage swing was seen during 100,000 program and erase cycles. Additional near-term goals for this project include extensive testing for radiation hardness and the development of artificial layered tunnel barrier heterostructures which have the potential for large speed enhancements for read/write of nanocrystal memory elements, compared with conventional flash devices. Additional information is contained in the original extended abstract.

  7. Synthesis of cobalt-based nanocrystal layer in silicon dioxide for nonvolatile memory applications.

    PubMed

    Yoon, Jong-Hwan

    2011-02-01

    Cobalt silicide (CoSi) nanocrystal (NC) layer distributed within narrow spatial region is synthesized by thermal annealing of a sandwich structure comprised of a thin cobalt (Co) film sandwiched between two silicon-rich oxide (SiO(x)) layers. It is shown that the size of the CoSi NCs can be controlled by varying the Co film thickness, an increase in the size with increasing thickness. Capacitance-voltage (C-V) measurements on a test metal/oxide/semiconductor (MOS) structure with floating gate based on CoSi NCs of 3.8 nm in diameter and 1.4 x 10(12) cm2 in density are shown to have C-V characteristics suitable for nonvolatile memory applications, including a C-V memory window of about 9.5 V for sweep voltages between -15 V and +8, a retention time >10(8) s, and an endurance > 10(6) program/erase cycles.

  8. Trade-Off Relationship of Size and Density of Platinum Nanocrystal in Nonvolatile Memory Characteristics

    NASA Astrophysics Data System (ADS)

    Seo, Jungmok; Lee, Taeyoon

    2010-10-01

    The replacement of metal nanocrystal (NC)-based nonvolatile memories (NVMs) with polycrystalline silicon floating-gate memories is very attractive, since they demonstrate superior capability of charge localization and a reduction in cell-to-cell interference. Varying the size (ranging from 15.1 to 55.2 nm) and density (from 5.6×1011 to 3.2×1010 cm-2) of the metal NC affects the entire memory properties such as the charging/discharging process, retention characteristic, and charge storage capability. Here, we investigated the effects of the size and density of platinum (Pt) NCs on the aforementioned memory characteristics by fabricating Pt-NC-embedded metal oxide semiconductor (MOS) capacitors using a direct self-assemble method. The flatband voltage shift, a measure of charge storage capability for NC-based NVMs, increased from 5.75 to 13.05 V as the mean size of the NCs was varied from 15.1 to 55.2 nm, which was relatively higher than that of other NC-based NVMs. Our studies revealed that the flatband voltage shift depends on not only the size and density of the NCs, but also the tunneling probability of the electrons, which is closely related to the applied electric field at a tunneling oxide. The relationships among the flatband voltage shift, the size and density of the NCs, and the applied electric field, which are revealed in this study, can be generally applicable to other NVMs based on various metal and semiconducting NCs.

  9. Charging behavior of silicon nitride based non-volatile memory structures with embedded semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Horváth, Zs. J.; Basa, P.; Jászi, T.; Molnár, K. Z.; Pap, A. E.; Molnár, Gy.

    2013-03-01

    The charging behavior of MNS (metal-nitride-silicon) and MNOS (metal-nitride-oxide-silicon) structures containing Si or Ge nanocrystals were studied by capacitance-voltage (C-V) and memory window measurements and by simulation. Both the width of hysteresis of C-V characteristics and the injected charge exhibited exponential dependence on the charging voltage at moderate voltage values, while at high voltages the width of hysteresis of C-V characteristics and the injected charge exhibited saturation. The memory window for reference MNS structure without nanocrystals was wider than that for reference MNOS structures. The presence of nanocrystals enhanced the charging behavior of MNOS structures, but in MNS structures nanocrystals exhibited the opposite effect. The main conclusion is that the presence of nanocrystals or other deep levels close to the Si surface enhances the charge injection properties due to the increased tunneling probability, but nanocrystals or other deep levels located far from the Si surface in the nitride layer do not enhance, but even can degrade the charging behavior by the capture of charge carriers.

  10. Oxygen plasma immersion ion implantation treatment to enhance data retention of tungsten nanocrystal nonvolatile memory

    SciTech Connect

    Wang, Jer-Chyi Chang, Wei-Cheng; Lai, Chao-Sung; Chang, Li-Chun; Ai, Chi-Fong; Tsai, Wen-Fa

    2014-03-15

    Data retention characteristics of tungsten nanocrystal (W-NC) memory devices using an oxygen plasma immersion ion implantation (PIII) treatment are investigated. With an increase of oxygen PIII bias voltage and treatment time, the capacitance–voltage hysteresis memory window is increased but the data retention characteristics become degraded. High-resolution transmission electron microscopy images show that this poor data retention is a result of plasma damage on the tunneling oxide layer, which can be prevented by lowering the bias voltage to 7 kV. In addition, by using the elevated temperature retention measurement technique, the effective charge trapping level of the WO{sub 3} film surrounding the W-NCs can be extracted. This measurement reveals that a higher oxygen PIII bias voltage and treatment time induces more shallow traps within the WO{sub 3} film, degrading the retention behavior of the W-NC memory.

  11. Nonvolatile Memory Technology for Space Applications

    NASA Technical Reports Server (NTRS)

    Oldham, Timothy R.; Irom, Farokh; Friendlich, Mark; Nguyen, Duc; Kim, Hak; Berg, Melanie; LaBel, Kenneth A.

    2010-01-01

    This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM.

  12. An overview of advanced nonvolatile memory technologies

    SciTech Connect

    Dressendorfer, P.V.

    1991-01-01

    This report is an overview of advanced nonvolatile memory technologies. The memory technologies discussed are: floating gate nonvolatile memory technologies; SNOS nonvolatile technology; ferroelectric technology; and thin film magnetic memories.

  13. Controlled fabrication of Si nanocrystal delta-layers in thin SiO{sub 2} layers by plasma immersion ion implantation for nonvolatile memories

    SciTech Connect

    Bonafos, C.; Ben-Assayag, G.; Groenen, J.; Carrada, M.; Spiegel, Y.; Torregrosa, F.; Normand, P.; Dimitrakis, P.; Kapetanakis, E.; Sahu, B. S.; Slaoui, A.

    2013-12-16

    Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate insulator of metal-oxide semiconductor devices. We report herein the fabrication of two-dimensional Si-NCs arrays in thin SiO{sub 2} films using PIII and rapid thermal annealing. The effect of plasma and implantation conditions on the structural properties of the NC layers is examined by transmission electron microscopy. A fine tuning of the NCs characteristics is possible by optimizing the oxide thickness, implantation energy, and dose. Electrical characterization revealed that the PIII-produced-Si NC structures are appealing for nonvolatile memories.

  14. Nonvolatile Analog Memory

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C. (Inventor)

    2007-01-01

    A nonvolatile analog memory uses pairs of ferroelectric field effect transistors (FFETs). Each pair is defined by a first FFET and a second FFET. When an analog value is to be stored in one of the pairs, the first FFET has a saturation voltage applied thereto, and the second FFET has a storage voltage applied thereto that is indicative of the analog value. The saturation and storage voltages decay over time in accordance with a known decay function that is used to recover the original analog value when the pair of FFETs is read.

  15. Investigation of p-channel and n-channel junctionless gate-all-around polycrystalline silicon nanowires with silicon nanocrystals nonvolatile memory

    NASA Astrophysics Data System (ADS)

    Yeh, Mu-Shih; Wu, Yung-Chun; Chung, Ming-Hsien; Jhan, Yi-Ruei; Chang-Liao, Kuei-Shu; Liu, Kuan-Cheng; Wu, Min-Hsin; Hung, Min-Feng

    2014-07-01

    This work presents p-channel and n-channel junctionless (JL) polycrystalline silicon (poly-Si) nanowires gate-all-around (GAA) nonvolatile memory (NVM) devices with silicon nanocrystals charge trapping layer. Experimental results indicate that the n-channel device has better programming efficiency and p-channel device has better erasing efficiency. For p-channel device, an extrapolation of the memory window to 10 yr demonstrates that 95% of the stored charge can be retained at high temperature of 85 °C. Such the p-channel and n-channel JL-GAA NVMs are feasible for use in system-on-panel (SOP) and 3-D stacked flash memory applications.

  16. Investigation of charge trapping mechanism for nanocrystal-based organic nonvolatile floating gate memory devices by band structure analysis

    NASA Astrophysics Data System (ADS)

    Lee, Dong-Hoon; Lim, Ki-Tae; Park, Eung-Kyu; Shin, Ha-Chul; Kim, Chung Soo; Park, Kee-Chan; Ahn, Joung-Real; Bang, Jin Ho; Kim, Yong-Sang

    2016-05-01

    This paper investigates the charge trapping mechanism and electrical performance of CdSe nanocrystals, such as nanoparticles and nanowires in organic floating gate memory devices. Despite of same chemical component, each nanocrystals show different electrical performances with distinct trapping mechanism. CdSe nanoparticles trap holes in the memory device; on the contrary, nanowires trap electrons. This phenomenon is mainly due to the difference of energy band structures between nanoparticles and nanowires, measured by the ultraviolet photoelectron spectroscopy. Also, we investigated the memory performance with C- V characteristics, charging and discharging phenomena, and retention time. The nanoparticle based hole trapping memory device has large memory window while the nanowire based electron trapping memory shows a narrow memory window. In spite of narrow memory window, the nanowire based memory device shows better retention performance of about 55% of the charge even after 104 sec of charging. The contrasting performance of nanoparticle and nanowire is attributed to the difference in their energy band and the morphology of thin layer in the device. [Figure not available: see fulltext.

  17. Silicon Nanocrystal Nonvolatile Memories

    NASA Astrophysics Data System (ADS)

    Muralidhar, R.; Sadd, M. A.; White, B. E.

    In 1959, physicist Richard Feynman delivered his "There's Plenty of Room Left at the Bottom" lecture [1] to the American Physical Society that spawned the field of nanotechnology. In that lecture, Feynman discussed two themes that are critical to the work presented here. The first was the recognition of the tremendous opportunities associated with the ability to miniaturize computers. At the time of his lecture, the most powerful computers consumed entire rooms, and Feynman realized the tremendous gains that could be realized in performance if the technology could be reduced to the size of one's thumbnail. The second important area Feynman touched on was the unique opportunities that surround the manipulation of matter at the atomic level to create materials with unique and, hopefully, useful properties. Both of these ideas have now been realized as evidenced by the exponential growth of the semiconductor industry over the last 40 years and the tremendous explosion in nanotechnology research, development, and product introduction over the last decade

  18. Nonvolatile random access memory

    NASA Technical Reports Server (NTRS)

    Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor); Katti, Romney R. (Inventor)

    1994-01-01

    A nonvolatile magnetic random access memory can be achieved by an array of magnet-Hall effect (M-H) elements. The storage function is realized with a rectangular thin-film ferromagnetic material having an in-plane, uniaxial anisotropy and inplane bipolar remanent magnetization states. The thin-film magnetic element is magnetized by a local applied field, whose direction is used to form either a 0 or 1 state. The element remains in the 0 or 1 state until a switching field is applied to change its state. The stored information is detcted by a Hall-effect sensor which senses the fringing field from the magnetic storage element. The circuit design for addressing each cell includes transistor switches for providing a current of selected polarity to store a binary digit through a separate conductor overlying the magnetic element of the cell. To read out a stored binary digit, transistor switches are employed to provide a current through a row of Hall-effect sensors connected in series and enabling a differential voltage amplifier connected to all Hall-effect sensors of a column in series. To avoid read-out voltage errors due to shunt currents through resistive loads of the Hall-effect sensors of other cells in the same column, at least one transistor switch is provided between every pair of adjacent cells in every row which are not turned on except in the row of the selected cell.

  19. CF{sub 4} plasma treatment on nanostructure band engineered Gd{sub 2}O{sub 3}-nanocrystal nonvolatile memory

    SciTech Connect

    Wang, Jer-Chyi; Lin, Chih-Ting

    2011-03-15

    The effects of CF{sub 4} plasma treatment on Gd{sub 2}O{sub 3} nanocrystal (NC) memory were investigated. For material analysis, secondary ion mass spectrometry and x-ray photoelectron spectroscopy analyses were performed to characterize the fluorine depth profile of the Gd{sub 2}O{sub 3}-NC film. In addition, an UV-visible spectrophotometer was used to obtain the Gd{sub 2}O{sub 3} bandgap and analyzed to suggest the modified structure of the energy band. Moreover, the electrical properties, including the memory window, program/erase speed, charge retention, and endurance characteristics were significantly improved depending on the CF{sub 4} plasma treatment conditions. This can be explained by the physical model based on the built-in electric field in the Gd{sub 2}O{sub 3} nanostructure. However, it was observed that too much CF{sub 4} plasma caused large surface roughness induced by the plasma damage, leading to characteristics degradation. It was concluded that with suitable CF{sub 4} plasma treatment, this Gd{sub 2}O{sub 3}-NC memory can be applied to future nonvolatile memory applications.

  20. Light-bias coupling erase process for non-volatile zinc tin oxide TFT memory with a nickel nanocrystals charge trap layer

    NASA Astrophysics Data System (ADS)

    Li, Jeng-Ting; Liu, Li-Chih; Ke, Po-Hsien; Chen, Jen-Sue; Jeng, Jiann-Shing

    2016-03-01

    A nonvolatile charge trapping memory is demonstrated on a thin film transistor (TFT) using a solution processed ultra-thin (~7 nm) zinc tin oxide (ZTO) semiconductor layer with an Al2O3/Ni-nanocrystals (NCs)/SiO2 dielectric stack. A positive threshold voltage (V TH) shift of 7 V is achieved at gate programming voltage of 40 V for 1 s but the state will not be erased by applying negative gate voltage. However, the programmed V TH shift can be expediently erased by applying a gate voltage of  -10 V in conjunction with visible light illumination for 1 s. It is found that the sub-threshold swing (SS) deteriorates slightly under light illumination, indicating that photo-ionized oxygen vacancies (V\\text{o}+ and/or V\\text{o}++ ) are trapped at the interface between Al2O3 and ZTO, which assists the capture of electrons discharged from the Ni NCs charge trapping layer. The light-bias coupling action and the role of ultra-thin ZTO thickness are discussed to elucidate the efficient erasing mechanism.

  1. A multilevel nonvolatile magnetoelectric memory

    NASA Astrophysics Data System (ADS)

    Shen, Jianxin; Cong, Junzhuang; Shang, Dashan; Chai, Yisheng; Shen, Shipeng; Zhai, Kun; Sun, Young

    2016-09-01

    The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple states of the magnetoelectric coefficient (α) of multiferroics. Because the states of α depends on the relative orientation between magnetization and polarization, one can reach different levels of α by controlling the ratio of up and down ferroelectric domains with external electric fields. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure confirm that the states of α can be well controlled between positive and negative by applying selective electric fields. Consequently, two-level, four-level, and eight-level nonvolatile memory devices are demonstrated at room temperature. This kind of multilevel magnetoelectric memory retains all the advantages of ferroelectric random access memory but overcomes the drawback of destructive reading of polarization. In contrast, the reading of α is nondestructive and highly efficient in a parallel way, with an independent reading coil shared by all the memory cells.

  2. A multilevel nonvolatile magnetoelectric memory

    PubMed Central

    Shen, Jianxin; Cong, Junzhuang; Shang, Dashan; Chai, Yisheng; Shen, Shipeng; Zhai, Kun; Sun, Young

    2016-01-01

    The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple states of the magnetoelectric coefficient (α) of multiferroics. Because the states of α depends on the relative orientation between magnetization and polarization, one can reach different levels of α by controlling the ratio of up and down ferroelectric domains with external electric fields. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure confirm that the states of α can be well controlled between positive and negative by applying selective electric fields. Consequently, two-level, four-level, and eight-level nonvolatile memory devices are demonstrated at room temperature. This kind of multilevel magnetoelectric memory retains all the advantages of ferroelectric random access memory but overcomes the drawback of destructive reading of polarization. In contrast, the reading of α is nondestructive and highly efficient in a parallel way, with an independent reading coil shared by all the memory cells. PMID:27681812

  3. Analog Nonvolatile Computer Memory Circuits

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd

    2007-01-01

    In nonvolatile random-access memory (RAM) circuits of a proposed type, digital data would be stored in analog form in ferroelectric field-effect transistors (FFETs). This type of memory circuit would offer advantages over prior volatile and nonvolatile types: In a conventional complementary metal oxide/semiconductor static RAM, six transistors must be used to store one bit, and storage is volatile in that data are lost when power is turned off. In a conventional dynamic RAM, three transistors must be used to store one bit, and the stored bit must be refreshed every few milliseconds. In contrast, in a RAM according to the proposal, data would be retained when power was turned off, each memory cell would contain only two FFETs, and the cell could store multiple bits (the exact number of bits depending on the specific design). Conventional flash memory circuits afford nonvolatile storage, but they operate at reading and writing times of the order of thousands of conventional computer memory reading and writing times and, hence, are suitable for use only as off-line storage devices. In addition, flash memories cease to function after limited numbers of writing cycles. The proposed memory circuits would not be subject to either of these limitations. Prior developmental nonvolatile ferroelectric memories are limited to one bit per cell, whereas, as stated above, the proposed memories would not be so limited. The design of a memory circuit according to the proposal must reflect the fact that FFET storage is only partly nonvolatile, in that the signal stored in an FFET decays gradually over time. (Retention times of some advanced FFETs exceed ten years.) Instead of storing a single bit of data as either a positively or negatively saturated state in a ferroelectric device, each memory cell according to the proposal would store two values. The two FFETs in each cell would be denoted the storage FFET and the control FFET. The storage FFET would store an analog signal value

  4. Securing non-volatile memory regions

    DOEpatents

    Faraboschi, Paolo; Ranganathan, Parthasarathy; Muralimanohar, Naveen

    2013-08-20

    Methods, apparatus and articles of manufacture to secure non-volatile memory regions are disclosed. An example method disclosed herein comprises associating a first key pair and a second key pair different than the first key pair with a process, using the first key pair to secure a first region of a non-volatile memory for the process, and using the second key pair to secure a second region of the non-volatile memory for the same process, the second region being different than the first region.

  5. Self-assembly of Ni nanocrystals on HfO2 and N-assisted Ni confinement for nonvolatile memory application

    NASA Astrophysics Data System (ADS)

    Tan, Zerlinda; Samanta, S. K.; Yoo, Won Jong; Lee, Sungjoo

    2005-01-01

    We demonstrate memory property using Ni nanocrystals with mean diameter of 9nm embedded in HfO2 high-k dielectric that are formed via a self-assembly process by sputtering and rapid thermal annealing. X-ray photoelectron spectroscopy shows that Ni penetrates into the 5nm HfO2 after high temperature annealing above 800°C in N2. However, the diffusion is suppressed by N incorporation into HfO2 by NH3 annealing. Metal-oxide-semiconductor structures were fabricated with Ni nanocrystals embedded in HfO2. An additional counterclockwise hysteresis of 2.1V due to the charge trapping properties of the Ni nanocrystals was observed from a ±5V sweep during capacitance-voltage electrical measurement.

  6. Nonvolatile memory technology at Sandia National Laboratories

    SciTech Connect

    Sokel, R.J.; Dodson, W.H.; Knoll, M.G.

    1981-01-01

    The nonvolatile memory program at Sandia National Laboratories is discussed with special emphasis on the relationship between technology and design. Three different MNOS technologies which have been developed for EAROM, RAM, and EEPROM applications are considered.

  7. Non-volatile memory for checkpoint storage

    DOEpatents

    Blumrich, Matthias A.; Chen, Dong; Cipolla, Thomas M.; Coteus, Paul W.; Gara, Alan; Heidelberger, Philip; Jeanson, Mark J.; Kopcsay, Gerard V.; Ohmacht, Martin; Takken, Todd E.

    2014-07-22

    A system, method and computer program product for supporting system initiated checkpoints in high performance parallel computing systems and storing of checkpoint data to a non-volatile memory storage device. The system and method generates selective control signals to perform checkpointing of system related data in presence of messaging activity associated with a user application running at the node. The checkpointing is initiated by the system such that checkpoint data of a plurality of network nodes may be obtained even in the presence of user applications running on highly parallel computers that include ongoing user messaging activity. In one embodiment, the non-volatile memory is a pluggable flash memory card.

  8. Nonvolatile organic bistable devices fabricated utilizing Cu2O nanocrystals embedded in a polyimide layer

    NASA Astrophysics Data System (ADS)

    Jung, Jae Hun; Kim, Jae-Ho; Kim, Tae Whan; Song, Mun Seop; Kim, Young-Ho; Jin, Sungho

    2006-09-01

    The bistable effects of cuprous oxide (Cu2O) nanoparticles embedded in a polyimide (PI) matrix were investigated. Transmission electron microscopy images and selected area electron diffraction patterns showed that Cu2O nanocrystals were formed inside the PI layer. Current-voltage (I-V) measurements on Al/PI/nanocrystalline Cu2O/PI/Al structures at 300K showed a nonvolatile electrical bistability behavior. A bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results. These results indicate that OBDs fabricated utilizing self-assembled inorganic Cu2O nanocrystals embedded in an organic PI layer hold promise for potential applications in nonvolatile flash memory devices.

  9. Overview of emerging nonvolatile memory technologies

    PubMed Central

    2014-01-01

    Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new

  10. Serial nonvolatile 1024 bit MNOS memory

    SciTech Connect

    Dodson, W. H.; Sokel, R. J.

    1980-01-01

    The characteristics and operation of a nonvolatile MNOS sequential memory designed and built by Sandia National Laboratories for DOD are described. First, a general description and block diagram are presented, followed by the power, voltage, clock and address requirements, and then operating descriptions for the control and data signals. 1 figure, 1 table.

  11. SONOS Nonvolatile Memory Cell Programming Characteristics

    NASA Technical Reports Server (NTRS)

    MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.

    2010-01-01

    Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory is gaining favor over conventional EEPROM FLASH memory technology. This paper characterizes the SONOS write operation using a nonquasi-static MOSFET model. This includes floating gate charge and voltage characteristics as well as tunneling current, voltage threshold and drain current characterization. The characterization of the SONOS memory cell predicted by the model closely agrees with experimental data obtained from actual SONOS memory cells. The tunnel current, drain current, threshold voltage and read drain current all closely agreed with empirical data.

  12. Nonvolatile Memory Based on Nonlinear Magnetoelectric Effects

    NASA Astrophysics Data System (ADS)

    Shen, Jianxin; Cong, Junzhuang; Chai, Yisheng; Shang, Dashan; Shen, Shipeng; Zhai, Kun; Tian, Ying; Sun, Young

    2016-08-01

    The magnetoelectric effects in multiferroics have a great potential in creating next-generation memory devices. We use an alternative concept of nonvolatile memory based, on a type of nonlinear magnetoelectric effects showing a butterfly-shaped hysteresis loop. The principle is to utilize the states of the magnetoelectric coefficient, instead of magnetization, electric polarization, or resistance, to store binary information. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure clearly demonstrate that the sign of the magnetoelectric coefficient can be repeatedly switched between positive and negative by applying electric fields, confirming the feasibility of this principle. This kind of nonvolatile memory has outstanding practical virtues such as simple structure, easy operation in writing and reading, low power, fast speed, and diverse materials available.

  13. Black phosphorus nonvolatile transistor memory

    NASA Astrophysics Data System (ADS)

    Lee, Dain; Choi, Yongsuk; Hwang, Euyheon; Kang, Moon Sung; Lee, Seungwoo; Cho, Jeong Ho

    2016-04-01

    We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. The resulting BP-NFGTMs exhibited excellent memory performances, including the five-level data storage, large memory window (58.2 V), stable retention (104 s), and cyclic endurance (1000 cycles).We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. The resulting BP-NFGTMs exhibited excellent memory performances, including the five-level data storage, large memory window (58.2 V), stable retention (104 s), and cyclic endurance (1000 cycles). Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr02078j

  14. Flexible graphene-PZT ferroelectric nonvolatile memory

    NASA Astrophysics Data System (ADS)

    Lee, Wonho; Kahya, Orhan; Tat Toh, Chee; Özyilmaz, Barbaros; Ahn, Jong-Hyun

    2013-11-01

    We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol-gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm-2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene-PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

  15. Non-volatile magnetic random access memory

    NASA Technical Reports Server (NTRS)

    Katti, Romney R. (Inventor); Stadler, Henry L. (Inventor); Wu, Jiin-Chuan (Inventor)

    1994-01-01

    Improvements are made in a non-volatile magnetic random access memory. Such a memory is comprised of an array of unit cells, each having a Hall-effect sensor and a thin-film magnetic element made of material having an in-plane, uniaxial anisotropy and in-plane, bipolar remanent magnetization states. The Hall-effect sensor is made more sensitive by using a 1 m thick molecular beam epitaxy grown InAs layer on a silicon substrate by employing a GaAs/AlGaAs/InAlAs superlattice buffering layer. One improvement avoids current shunting problems of matrix architecture. Another improvement reduces the required magnetizing current for the micromagnets. Another improvement relates to the use of GaAs technology wherein high electron-mobility GaAs MESFETs provide faster switching times. Still another improvement relates to a method for configuring the invention as a three-dimensional random access memory.

  16. Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films

    SciTech Connect

    Valentini, L. Cardinali, M.; Fortunati, E.; Kenny, J. M.

    2014-10-13

    With the continuous advance of modern electronics, the demand for nonvolatile memory cells rapidly grows. In order to develop post-silicon electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of materials for nonvolatile memory cells. In this work, we realized a resistive memory device based on graphene oxide (GO) and GO/cellulose nanocrystals (CNC) thin films. Aqueous solutions of GO and GO with CNC have been prepared and drop cast between two metal electrodes. Such thin-film based devices showed a transition between low and high conductivity states upon the forward and backward sweeping of an external electric field. This reversible current density transition behavior demonstrates a typical memory characteristic. The obtained results open an easy route for electronic information storage based on the integration of nanocrystalline cellulose onto graphene based devices.

  17. Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films

    NASA Astrophysics Data System (ADS)

    Valentini, L.; Cardinali, M.; Fortunati, E.; Kenny, J. M.

    2014-10-01

    With the continuous advance of modern electronics, the demand for nonvolatile memory cells rapidly grows. In order to develop post-silicon electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of materials for nonvolatile memory cells. In this work, we realized a resistive memory device based on graphene oxide (GO) and GO/cellulose nanocrystals (CNC) thin films. Aqueous solutions of GO and GO with CNC have been prepared and drop cast between two metal electrodes. Such thin-film based devices showed a transition between low and high conductivity states upon the forward and backward sweeping of an external electric field. This reversible current density transition behavior demonstrates a typical memory characteristic. The obtained results open an easy route for electronic information storage based on the integration of nanocrystalline cellulose onto graphene based devices.

  18. Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory

    PubMed Central

    Nagashima, Kazuki; Koga, Hirotaka; Celano, Umberto; Zhuge, Fuwei; Kanai, Masaki; Rahong, Sakon; Meng, Gang; He, Yong; De Boeck, Jo; Jurczak, Malgorzata; Vandervorst, Wilfried; Kitaoka, Takuya; Nogi, Masaya; Yanagida, Takeshi

    2014-01-01

    On the development of flexible electronics, a highly flexible nonvolatile memory, which is an important circuit component for the portability, is necessary. However, the flexibility of existing nonvolatile memory has been limited, e.g. the smallest radius into which can be bent has been millimeters range, due to the difficulty in maintaining memory properties while bending. Here we propose the ultra flexible resistive nonvolatile memory using Ag-decorated cellulose nanofiber paper (CNP). The Ag-decorated CNP devices showed the stable nonvolatile memory effects with 6 orders of ON/OFF resistance ratio and the small standard deviation of switching voltage distribution. The memory performance of CNP devices can be maintained without any degradation when being bent down to the radius of 350 μm, which is the smallest value compared to those of existing any flexible nonvolatile memories. Thus the present device using abundant and mechanically flexible CNP offers a highly flexible nonvolatile memory for portable flexible electronics. PMID:24985164

  19. Radiation and Reliability Concerns for Modern Nonvolatile Memory Technology

    NASA Technical Reports Server (NTRS)

    Oldham, Timothy R.; Friendlich, Mark R.; Kim, Hak S.; Berg, Melanie D.; LaBel, Kenneth A.; Buchner, S. P.; McMorrow, D.; Mavis, D. G.; Eaton, P. H.; Castillo, J.

    2011-01-01

    Commercial nonvolatile memory technology is attractive for space applications, but radiation issues are serious concerns. In addition, we discuss combined radiation/reliability concerns which are only beginning to be addressed.

  20. Non-Volatile Memory Technology Symposium 2000: Proceedings

    NASA Technical Reports Server (NTRS)

    Aranki, Nazeeh (Editor)

    2000-01-01

    This publication contains the proceedings for the Non-Volatile Memory Technology Symposium 2000 that was held on November 15-16, 2000 in Arlington, Virginia. The proceedings contains a wide range of papers that cover the presentations of myriad advances in the nonvolatile memory technology during the recent past including memory cell design, simulations, radiation environment, and emerging memory technologies. The papers presented in the proceedings address the design challenges and applications and deals with newer, emerging memory technologies as well as related issues of radiation environment and die packaging.

  1. Method for refreshing a non-volatile memory

    DOEpatents

    Riekels, James E.; Schlesinger, Samuel

    2008-11-04

    A non-volatile memory and a method of refreshing a memory are described. The method includes allowing an external system to control refreshing operations within the memory. The memory may generate a refresh request signal and transmit the refresh request signal to the external system. When the external system finds an available time to process the refresh request, the external system acknowledges the refresh request and transmits a refresh acknowledge signal to the memory. The memory may also comprise a page register for reading and rewriting a data state back to the memory. The page register may comprise latches in lieu of supplemental non-volatile storage elements, thereby conserving real estate within the memory.

  2. EDITORIAL: Non-volatile memory based on nanostructures Non-volatile memory based on nanostructures

    NASA Astrophysics Data System (ADS)

    Kalinin, Sergei; Yang, J. Joshua; Demming, Anna

    2011-06-01

    Non-volatile memory refers to the crucial ability of computers to store information once the power source has been removed. Traditionally this has been achieved through flash, magnetic computer storage and optical discs, and in the case of very early computers paper tape and punched cards. While computers have advanced considerably from paper and punched card memory devices, there are still limits to current non-volatile memory devices that restrict them to use as secondary storage from which data must be loaded and carefully saved when power is shut off. Denser, faster, low-energy non-volatile memory is highly desired and nanostructures are the critical enabler. This special issue on non-volatile memory based on nanostructures describes some of the new physics and technology that may revolutionise future computers. Phase change random access memory, which exploits the reversible phase change between crystalline and amorphous states, also holds potential for future memory devices. The chalcogenide Ge2Sb2Te5 (GST) is a promising material in this field because it combines a high activation energy for crystallization and a relatively low crystallization temperature, as well as a low melting temperature and low conductivity, which accommodates localized heating. Doping is often used to lower the current required to activate the phase change or 'reset' GST but this often aggravates other problems. Now researchers in Korea report in-depth studies of SiO2-doped GST and identify ways of optimising the material's properties for phase-change random access memory [1]. Resistance switching is an area that has attracted a particularly high level of interest for non-volatile memory technology, and a great deal of research has focused on the potential of TiO2 as a model system in this respect. Researchers at HP labs in the US have made notable progress in this field, and among the work reported in this special issue they describe means to control the switch resistance and show

  3. Active non-volatile memory post-processing

    DOEpatents

    Kannan, Sudarsun; Milojicic, Dejan S.; Talwar, Vanish

    2017-04-11

    A computing node includes an active Non-Volatile Random Access Memory (NVRAM) component which includes memory and a sub-processor component. The memory is to store data chunks received from a processor core, the data chunks comprising metadata indicating a type of post-processing to be performed on data within the data chunks. The sub-processor component is to perform post-processing of said data chunks based on said metadata.

  4. Non-Volatile Memory Technology Symposium 2001: Proceedings

    NASA Technical Reports Server (NTRS)

    Aranki, Nazeeh; Daud, Taher; Strauss, Karl

    2001-01-01

    This publication contains the proceedings for the Non-Volatile Memory Technology Symposium 2001 that was held on November 7-8, 2001 in San Diego, CA. The proceedings contains a a wide range of papers that cover current and new memory technologies including Flash memories, Magnetic Random Access Memories (MRAM and GMRAM), Ferro-electric RAM (FeRAM), and Chalcogenide RAM (CRAM). The papers presented in the proceedings address the use of these technologies for space applications as well as radiation effects and packaging issues.

  5. Characterization of an Autonomous Non-Volatile Ferroelectric Memory Latch

    NASA Technical Reports Server (NTRS)

    John, Caroline S.; MacLeod, Todd C.; Evans, Joe; Ho, Fat D.

    2011-01-01

    We present the electrical characterization of an autonomous non-volatile ferroelectric memory latch using the principle that when an electric field is applied to a ferroelectriccapacitor,the positive and negative remnant polarization charge states of the capacitor are denoted as either data 0 or data 1. The properties of the ferroelectric material to store an electric polarization in the absence of an electric field make the device non-volatile. Further the memory latch is autonomous as it operates with the ground, power and output node connections, without any externally clocked control line. The unique quality of this latch circuit is that it can be written when powered off. The advantages of this latch over flash memories are: a) It offers unlimited reads/writes b) works on symmetrical read/write cycles. c) The latch is asynchronous. The circuit was initially developed by Radiant Technologies Inc., Albuquerque, New Mexico.

  6. Effect of location of Si or Ge nanocrystals on the memory behavior of MNOS structures

    NASA Astrophysics Data System (ADS)

    Horváth, Zs. J.; Basa, P.; Molnár, K. Z.; Molnár, Gy.; Jászi, T.; Pap, A. E.

    2013-06-01

    Charge injection and retention behaviors of metal-nitride-oxide-silicon (MNOS) memory structures with Si or Ge nanocrystals embedded at a depth of 3 nm in the nitride layer were studied. The effect of Si nanocrystals on these properties was opposite in comparison with that of Ge nanocrystals. To understand the origin of these opposite effects, the influence of the oxide thickness and of the depth, size and location of semiconductor nanocrystals has been studied on the charging behavior of MNOS non-volatile memory structures by the calculation of electron and hole tunneling probabilities, and by the simulation of memory window, memory hysteresis and retention behavior. For MNOS structures it is obtained that the presence of nanocrystals enhances the charge injection resulting in better performance, but only for structures with thin tunnel oxide layer (below 3 nm), and if the nanocrystals are located close to the oxide/nitride interface. In the case of very high tunneling probability, i.e., of high tunneling currents the system approaches equilibrium and the memory behavior collapses. There is a narrow range of oxide thickness or depth of nanocrystals, where the charging properties change very fast. Retention exhibits a very sharp dependence on the oxide thickness and on depth of nanocrystals as well. Most part of the experimental results can be explained on the basis of the results of simulations.

  7. Titanium oxide nonvolatile memory device and its application

    NASA Astrophysics Data System (ADS)

    Wang, Wei

    In recent years, the semiconductor memory industry has seen an ever-increasing demand for nonvolatile memory (NVM), which is fueled by portable consumer electronic applications like the mobile phone and MP3 player. FLASH memory has been the most widely used nonvolatile memories in these systems, and has successfully kept up with CMOS scaling for many generations. However, as FLASH memory faces major scaling challenges beyond 22nm, non-charge-based nonvolatile memories are widely researched as candidates to replace FLASH. Titanium oxide (TiOx) nonvolatile memory device is considered to be a promising choice due to its controllable nonvolatile memory switching, good scalability, compatibility with CMOS processing and potential for 3D stacking. However, several major issues need to be overcome before TiOx NVM device can be adopted in manufacturing. First, there exists a highly undesirable high-voltage stress initiation process (FORMING) before the device can switch between high and low resistance states repeatedly. By analyzing the conductive behaviors of the memory device before and after FORMING, we propose that FORMING involves breaking down an interfacial layer between its Pt electrode and the TiOx thin film, and that FORMING is not needed if the Pt-TiOx interface can be kept clean during fabrication. An in-situ fabrication process is developed for cross-point TiOx NVM device, which enables in-situ deposition of the critical layers of the memory device and thus achieves clean interfaces between Pt electrodes and TiOx film. Testing results show that FORMING is indeed eliminated for memory devices made with the in-situ fabrication process. It verifies the significance of in-situ deposition without vacuum break in the fabrication of TiOx NVM devices. Switching parameters statistics of TiOx NVM devices are studied and compared for unipolar and bipolar switching modes. RESET mechanisms are found to be different for the two switching modes: unipolar switching can be

  8. Remarkable charge-trapping performance based in Zr0.5Hf0.5O2 with nanocrystal Ba0.6Sr0.4TiO3 blocking layer for nonvolatile memory device

    NASA Astrophysics Data System (ADS)

    Yan, X. B.; Jia, X. L.; Yang, T.; Zhao, J. H.; Li, Y. C.; Zhou, Z. Y.; Zhang, Y. Y.

    2016-10-01

    Two kinds of charge trapping memory device with Au/Zr0.5Hf0.5O2(ZHO)/SiO2/p-Si and Au/Ba0.6Sr0.4TiO3(BST)/Zr0.5Hf0.5O2/SiO2/p-Si structure were fabricated and investigated. The double BST/ZHO films exhibit a larger memory window of 7.36 V under ±14 V sweeping voltages in its C-V curve and the device has good charge retention properties with only small charge loss of ∼ 5% after more than 104 s. The good characteristics are attributed to the inter-diffusion between BST and ZHO where more deep defect sites were created after RTA treatment, which provides high potential barriers for the trapped charges to tunnel back to the silicon substrate. Furthermore, the nanocrystal in the BST layer increases the tunneling barrier of tunneling current into the gate and effectively restrains the leakage of storage charge from blocking layer, which improves the charge retention characteristic.

  9. Integrated photonics with programmable non-volatile memory.

    PubMed

    Song, Jun-Feng; Luo, Xian-Shu; Lim, Andy Eu-Jin; Li, Chao; Fang, Qing; Liow, Tsung-Yang; Jia, Lian-Xi; Tu, Xiao-Guang; Huang, Ying; Zhou, Hai-Feng; Lo, Guo-Qiang

    2016-03-04

    Silicon photonics integrated circuits (Si-PIC) with well-established active and passive building elements are progressing towards large-scale commercialization in optical communications and high speed optical interconnects applications. However, current Si-PICs do not have memory capabilities, in particular, the non-volatile memory functionality for energy efficient data storage. Here, we propose an electrically programmable, multi-level non-volatile photonics memory cell (PMC) fabricated by standard complementary-metal-oxide-semiconductor (CMOS) compatible processes. A micro-ring resonator (MRR) was built using the PMC to optically read the memory states. Switching energy smaller than 20 pJ was achieved. Additionally, a MRR memory array was employed to demonstrate a four-bit memory read capacity. Theoretically, this can be increased up to ~400 times using a 100 nm free spectral range broadband light source. The fundamental concept of this design provides a route to eliminate the von Neumann bottleneck. The energy-efficient optical storage can complement on-chip optical interconnects for neutral networking, memory input/output interfaces and other computational intensive applications.

  10. Integrated photonics with programmable non-volatile memory

    PubMed Central

    Song, Jun-Feng; Luo, Xian-Shu; Lim, Andy Eu-Jin; Li, Chao; Fang, Qing; Liow, Tsung-Yang; Jia, Lian-Xi; Tu, Xiao-Guang; Huang, Ying; Zhou, Hai-Feng; Lo, Guo-Qiang

    2016-01-01

    Silicon photonics integrated circuits (Si-PIC) with well-established active and passive building elements are progressing towards large-scale commercialization in optical communications and high speed optical interconnects applications. However, current Si-PICs do not have memory capabilities, in particular, the non-volatile memory functionality for energy efficient data storage. Here, we propose an electrically programmable, multi-level non-volatile photonics memory cell (PMC) fabricated by standard complementary-metal-oxide-semiconductor (CMOS) compatible processes. A micro-ring resonator (MRR) was built using the PMC to optically read the memory states. Switching energy smaller than 20 pJ was achieved. Additionally, a MRR memory array was employed to demonstrate a four-bit memory read capacity. Theoretically, this can be increased up to ~400 times using a 100 nm free spectral range broadband light source. The fundamental concept of this design provides a route to eliminate the von Neumann bottleneck. The energy-efficient optical storage can complement on-chip optical interconnects for neutral networking, memory input/output interfaces and other computational intensive applications. PMID:26941113

  11. Graphene nonvolatile memory prototype based on charge-transfer mechanism

    NASA Astrophysics Data System (ADS)

    Lv, Hongming; Wu, Huaqiang; Huang, Can; Wang, Yuda; Qian, He

    2014-04-01

    A graphene nonvolatile memory (GNVM) prototype based on charge transfer between the graphene layer and the NH2(CH2)3Si(OEt)3 (APTES) self-assembled monolayer (SAM) is demonstrated. Graphene was transferred to an APTES-SAM-engineered SiO2 substrate and patterned into bottom-gate transistors. Owing to the charge trapping/detrapping property of the nitrogen atoms in APTES, a significant and reproducible transfer curve hysteresis is observed. Memory performance metrics, including retention and endurance, are reported. Comparisons between vacuum and ambient environment test results indicate air absorbates’ detrimental effect. Loss of nonvolatile storage is explained on the basis of a two-layer tunneling junction model, which sheds light on further device improvement through aminosilane molecule structure optimization.

  12. Nonvolatile semiconductor memory having three dimension charge confinement

    DOEpatents

    Dawson, L. Ralph; Osbourn, Gordon C.; Peercy, Paul S.; Weaver, Harry T.; Zipperian, Thomas E.

    1991-01-01

    A layered semiconductor device with a nonvolatile three dimensional memory comprises a storage channel which stores charge carriers. Charge carriers flow laterally through the storage channel from a source to a drain. Isolation material, either a Schottky barrier or a heterojunction, located in a trench of an upper layer controllably retains the charge within the a storage portion determined by the confining means. The charge is retained for a time determined by the isolation materials' nonvolatile characteristics or until a change of voltage on the isolation material and the source and drain permit a read operation. Flow of charge through an underlying sense channel is affected by the presence of charge within the storage channel, thus the presences of charge in the memory can be easily detected.

  13. Nonvolatile GaAs Random-Access Memory

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.; Stadler, Henry L.; Wu, Jiin-Chuan

    1994-01-01

    Proposed random-access integrated-circuit electronic memory offers nonvolatile magnetic storage. Bits stored magnetically and read out with Hall-effect sensors. Advantages include short reading and writing times and high degree of immunity to both single-event upsets and permanent damage by ionizing radiation. Use of same basic material for both transistors and sensors simplifies fabrication process, with consequent benefits in increased yield and reduced cost.

  14. Integrated, nonvolatile, high-speed analog random access memory

    NASA Technical Reports Server (NTRS)

    Katti, Romney R. (Inventor); Wu, Jiin-Chuan (Inventor); Stadler, Henry L. (Inventor)

    1994-01-01

    This invention provides an integrated, non-volatile, high-speed random access memory. A magnetically switchable ferromagnetic or ferrimagnetic layer is sandwiched between an electrical conductor which provides the ability to magnetize the magnetically switchable layer and a magneto resistive or Hall effect material which allows sensing the magnetic field which emanates from the magnetization of the magnetically switchable layer. By using this integrated three-layer form, the writing process, which is controlled by the conductor, is separated from the storage medium in the magnetic layer and from the readback process which is controlled by the magnetoresistive layer. A circuit for implementing the memory in CMOS or the like is disclosed.

  15. Microprocessor Controller With Nonvolatile Memory Implementation.

    DTIC Science & Technology

    1985-12-01

    minor crystalline and circuit board break- 0 age . The causes of this damage were not positively identi- fied and were attributed to factors ranging...large. In assembly language programs, the code tends to be more optimized, further reducing memory us- age . It was against this backdrop that the Z-80 and...FRTAo1 ;’WRITE, READ IUBBLF Mir DATA C"’D 2USYEr: rCX ;DIC lIME OUT LOOP COUNTER- XRA A CPA ETEST B REG= eOE ORA C ;TEST C REG= e0H ." ", JZ TINSIB

  16. Development of non-volatile semiconductor memory

    NASA Technical Reports Server (NTRS)

    Heikkila, W. W.

    1979-01-01

    A 256 word by 8-bit random access memory chip was developed utilizing p channel, metal gate metal-nitride-oxide-silicon (MNOS) technology; with operational characteristics of a 2.5 microsecond read cycle, a 6.0 microsecond write cycle, 800 milliwatts of power dissipation; and retention characteristics of 10 to the 8th power read cycles before data refresh and 5000 hours of no power retention. Design changes were implemented to reduce switching currents that caused parasitic bipolar transistors inherent in the MNOS structure to turn on. Final wafer runs exhibited acceptable yields for a die 250 mils on a side. Evaluation testing was performed on the device in order to determine the maturity of the device. A fixed gate breakdown mechanism was found when operated continuously at high temperature.

  17. Highly Stretchable Non-volatile Nylon Thread Memory

    PubMed Central

    Kang, Ting-Kuo

    2016-01-01

    Integration of electronic elements into textiles, to afford e-textiles, can provide an ideal platform for the development of lightweight, thin, flexible, and stretchable e-textiles. This approach will enable us to meet the demands of the rapidly growing market of wearable-electronics on arbitrary non-conventional substrates. However the actual integration of the e-textiles that undergo mechanical deformations during both assembly and daily wear or satisfy the requirements of the low-end applications, remains a challenge. Resistive memory elements can also be fabricated onto a nylon thread (NT) for e-textile applications. In this study, a simple dip-and-dry process using graphene-PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate) ink is proposed for the fabrication of a highly stretchable non-volatile NT memory. The NT memory appears to have typical write-once-read-many-times characteristics. The results show that an ON/OFF ratio of approximately 103 is maintained for a retention time of 106 s. Furthermore, a highly stretchable strain and a long-term digital-storage capability of the ON-OFF-ON states are demonstrated in the NT memory. The actual integration of the knitted NT memories into textiles will enable new design possibilities for low-cost and large-area e-textile memory applications. PMID:27072786

  18. Highly Stretchable Non-volatile Nylon Thread Memory

    NASA Astrophysics Data System (ADS)

    Kang, Ting-Kuo

    2016-04-01

    Integration of electronic elements into textiles, to afford e-textiles, can provide an ideal platform for the development of lightweight, thin, flexible, and stretchable e-textiles. This approach will enable us to meet the demands of the rapidly growing market of wearable-electronics on arbitrary non-conventional substrates. However the actual integration of the e-textiles that undergo mechanical deformations during both assembly and daily wear or satisfy the requirements of the low-end applications, remains a challenge. Resistive memory elements can also be fabricated onto a nylon thread (NT) for e-textile applications. In this study, a simple dip-and-dry process using graphene-PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate) ink is proposed for the fabrication of a highly stretchable non-volatile NT memory. The NT memory appears to have typical write-once-read-many-times characteristics. The results show that an ON/OFF ratio of approximately 103 is maintained for a retention time of 106 s. Furthermore, a highly stretchable strain and a long-term digital-storage capability of the ON-OFF-ON states are demonstrated in the NT memory. The actual integration of the knitted NT memories into textiles will enable new design possibilities for low-cost and large-area e-textile memory applications.

  19. Parallel programmable nonvolatile memory using ordinary static random access memory cells

    NASA Astrophysics Data System (ADS)

    Mizutani, Tomoko; Takeuchi, Kiyoshi; Saraya, Takuya; Shinohara, Hirofumi; Kobayashi, Masaharu; Hiramoto, Toshiro

    2017-04-01

    A technique of using an ordinary static random access memory (SRAM) array for a programmable nonvolatile (NV) memory is proposed. The parallel NV writing of the entire array is achieved by simply applying high-voltage stress to the power supply terminal, after storing inverted desired data in the static random access memory (SRAM) array. Successful 2 kbit NV writing is demonstrated using a device-matrix-array (DMA) test element group (TEG) fabricated by 0.18 µm technology.

  20. Bioorganic nanodots for non-volatile memory devices

    SciTech Connect

    Amdursky, Nadav; Shalev, Gil; Handelman, Amir; Natan, Amir; Rosenwaks, Yossi; Litsyn, Simon; Szwarcman, Daniel; Rosenman, Gil; Roizin, Yakov

    2013-12-01

    In recent years we are witnessing an intensive integration of bio-organic nanomaterials in electronic devices. Here we show that the diphenylalanine bio-molecule can self-assemble into tiny peptide nanodots (PNDs) of ∼2 nm size, and can be embedded into metal-oxide-semiconductor devices as charge storage nanounits in non-volatile memory. For that purpose, we first directly observe the crystallinity of a single PND by electron microscopy. We use these nanocrystalline PNDs units for the formation of a dense monolayer on SiO{sub 2} surface, and study the electron/hole trapping mechanisms and charge retention ability of the monolayer, followed by fabrication of PND-based memory cell device.

  1. Functional nanocrystal-based memories with extraction of nanocrystals properties by charge pumping technique

    NASA Astrophysics Data System (ADS)

    Diaz, R.; Grisolia, J.; Pecassou, B.; Shalchian, M.; BenAssayag, G.

    2013-04-01

    2D arrays of Si nanocrystals embedded in the gate oxide (⩽10 nm) of NVRAM-like transistors are synthesized by ultra-low-energy ion implantation (ULE-II). As we have shown previously, characteristics of trapping centers responsible for the memory performance such as type, depth location into the oxide, effective size and density could be obtained by using the two-level charge pumping (CP) technique performed versus frequency. It has also been demonstrated clearly that these trapping centers are the Si-NCs. However, in order to enhance the memory performances (i.e. charge retention and endurance to cycling), the synthesis of the Si-NCs must be carefully tuned, especially by adjusting the annealing conditions. In this paper, we demonstrate both that the Si-NCs are still responsible for the charge trapping while transistors are fabricated with strong NCs annealing conditions and that some memory performances recommended by the ITRS, more specifically the endurance criteria, are satisfied, with more than 106 erase/write cycles without degradation of the memory window. Therefore, our synthesis technique could provide high-performances non-volatile memories, ensuring the charge trapping in NCs.

  2. PREFACE: Emerging non-volatile memories: magnetic and resistive technologies Emerging non-volatile memories: magnetic and resistive technologies

    NASA Astrophysics Data System (ADS)

    Dieny, B.; Jagadish, Chennupati

    2013-02-01

    In 2010, the International Technology Roadmap for Semiconductors (ITRS) published an assessment of the potential and maturity of selected emerging research on memory technologies. Eight different technologies of non-volatile memories were compared (ferroelectric gate field-effect transistor, nano-electro-mechanical switch, spin-transfer torque random access memories (STTRAM), various types of resistive RAM, in particular redox RAM, nanothermal phase change RAM, electronic effects RAM, macromolecular memories and molecular RAM). In this report, spin-transfer torque MRAM and redox RRAM were identified as two emerging memory technologies recommended for accelerated research and development leading to scaling and commercialization of non-volatile RAM to and beyond the 16nm generation. Nowadays, there is an intense research and development effort in microelectronics on these two technologies, one based on spintronic phenomena (tunnel magnetoresistance and spin-transfer torque), the other based on migration of vacancies or ions in an insulating matrix driven by oxydo-reduction potentials. Both technologies could be used for standalone or embedded applications. In this context, it appeared timely to publish a cluster of review articles related to these two technologies. In this cluster, the first two articles introduce the general principles of spin-transfer torque RAM and of thermally assisted RAM. The third presents a broader range of applications for this integrated CMOS/magnetic tunnel junction technology for low-power electronics. The fourth paper presents more advanced research on voltage control of magnetization switching with the aim of dramatically reducing the write energy in MRAM. The last two papers deal with two categories of resistive RAM, one based on the migration of cations, the other one based on nanowires. We thank all the authors and reviewers for their contribution to this cluster issue. Our special thanks are due to Dr Olivia Roche, Publisher, and Dr

  3. Graphene-quantum-dot nonvolatile charge-trap flash memories.

    PubMed

    Sin Joo, Soong; Kim, Jungkil; Kang, Soo Seok; Kim, Sung; Choi, Suk-Ho; Hwang, Sung Won

    2014-06-27

    Nonvolatile flash-memory capacitors containing graphene quantum dots (GQDs) of 6, 12, and 27 nm average sizes (d) between SiO2 layers for use as charge traps have been prepared by sequential processes: ion-beam sputtering deposition (IBSD) of 10 nm SiO2 on a p-type wafer, spin-coating of GQDs on the SiO2 layer, and IBSD of 20 nm SiO2 on the GQD layer. The presence of almost a single array of GQDs at a distance of ∼13 nm from the SiO2/Si wafer interface is confirmed by transmission electron microscopy and photoluminescence. The memory window estimated by capacitance-voltage curves is proportional to d for sweep voltages wider than  ± 3 V, and for d = 27 nm the GQD memories show a maximum memory window of 8 V at a sweep voltage of  ± 10 V. The program and erase speeds are largest at d = 12 and 27 nm, respectively, and the endurance and data-retention properties are the best at d = 27 nm. These memory behaviors can be attributed to combined effects of edge state and quantum confinement.

  4. Design considerations for a radiation hardened nonvolatile memory

    SciTech Connect

    Murray, J.R.

    1993-02-01

    The SA3823 64K EEPROM was developed for both weapon and space applications. The circuit was designed for fabrication in a CMOS/SNOS (Complementary Metal Oxide Semiconductor/Silicon Nitride Oxide Semiconductor) process since this process offers maximum radiation hardness for nonvolatile circuits. [1--6] Specific aspects of the circuit design were influenced by each of the radiation environments of concern. Total dose radiation effects were a factor in the memory cell and sense amplifier designs. Power distribution to the various latches was designed to tolerate the photocurrents generated during a transient radiation pulse. Single event upset (SEU) concerns were accounted for in the design of the latches and the control logic. The SA3823 is a 8K x 8 bit EEPROM which is partitioned into 128 pages with 64 bytes in each page. Data is programmed into the memory one page at a time. Writing data into the memory is a two step process: loading 64 bytes into the data-in latches and then programming the latched data into a page of the memory.

  5. Design considerations for a radiation hardened nonvolatile memory

    SciTech Connect

    Murray, J.R.

    1993-01-01

    The SA3823 64K EEPROM was developed for both weapon and space applications. The circuit was designed for fabrication in a CMOS/SNOS (Complementary Metal Oxide Semiconductor/Silicon Nitride Oxide Semiconductor) process since this process offers maximum radiation hardness for nonvolatile circuits. [1--6] Specific aspects of the circuit design were influenced by each of the radiation environments of concern. Total dose radiation effects were a factor in the memory cell and sense amplifier designs. Power distribution to the various latches was designed to tolerate the photocurrents generated during a transient radiation pulse. Single event upset (SEU) concerns were accounted for in the design of the latches and the control logic. The SA3823 is a 8K x 8 bit EEPROM which is partitioned into 128 pages with 64 bytes in each page. Data is programmed into the memory one page at a time. Writing data into the memory is a two step process: loading 64 bytes into the data-in latches and then programming the latched data into a page of the memory.

  6. Quantum Dot Channel (QDC) Field Effect Transistors (FETs) and Floating Gate Nonvolatile Memory Cells

    NASA Astrophysics Data System (ADS)

    Kondo, J.; Lingalugari, M.; Chan, P.-Y.; Heller, E.; Jain, F.

    2015-09-01

    This paper presents silicon quantum dot channel (QDC) field effect transistors (FETs) and floating gate nonvolatile memory structures. The QDC-FET operation is explained by carrier transport in narrow mini-energy bands which are manifested in an array of SiO x -cladded silicon quantum dot layers. For nonvolatile memory structures, simulations of electron charge densities in the floating quantum dot layers are presented. Experimental threshold voltage shift in I D- V G characteristics is presented after the `Write' cycle. The QDC-FETs and nonvolatile memory due to improved threshold voltage variations by incorporating the lattice-matched II-VI layer as the gate insulator.

  7. Evaluation of switchable organic devices for nonvolatile memory applications

    NASA Astrophysics Data System (ADS)

    Campbell Scott, J.

    2007-03-01

    Many organic electronic devices exhibit switching behavior and have therefore been proposed as the basis for a nonvolatile memory technology. In particular, bistable resistive elements, in which a high or low current state is selected by application of a specific voltage, may be used as the elements of a crosspoint memory array. This architecture places very stringent requirements on the electrical response of the individual devices, in terms of on-state current density, switching and retention times, cycling endurance, rectification and size-scaling. In this talk, I will describe the progress that we and others have made towards satisfying these requirements. In many cases, the mechanisms responsible for conduction and switching are not fully understood. In some devices, it has been shown that current flows in a few highly localized regions. These so-called ``filaments'' are not necessarily metallic bridges between the electrodes, but may be associated with chains of nanoparticles introduced into the organic matrix either deliberately or accidentally. Coulomb blockade effects can then explain the switching behavior observed in some devices. This work was done in collaboration with L. D. Bozano, M. Beinhoff, K. R. Carter, V. R. Deline, B. W. Kean, G. M. McClelland, D. C. Miller, P. M. Rice, J. R. Salem, and S. A. Swanson.

  8. Combination of volatile and non-volatile functions in a single memory cell and its scalability

    NASA Astrophysics Data System (ADS)

    Kim, Hyungjin; Hwang, Sungmin; Lee, Jong-Ho; Park, Byung-Gook

    2017-04-01

    A single memory cell which combines volatile memory and non-volatile memory functions has been demonstrated with an independent asymmetric dual-gate structure. Owing to the second gate whose dielectric is composed of oxide/nitride/oxide layers, floating body effect was observed even on a fully depleted silicon-on-insulator device and the non-volatile memory function was measured. In addition, read retention characteristics of the volatile memory function depending on the non-volatile memory state were evaluated and analyzed. Further scalability in body thickness was also verified through simulation studies. These results indicate that the proposed device is a promising candidate for high-density embedded memory applications.

  9. Nanopatterned ferroelectrics for ultrahigh density rad-hard nonvolatile memories.

    SciTech Connect

    Brennecka, Geoffrey L.; Stevens, Jeffrey; Scrymgeour, David; Gin, Aaron V.; Tuttle, Bruce Andrew

    2010-09-01

    Radiation hard nonvolatile random access memory (NVRAM) is a crucial component for DOE and DOD surveillance and defense applications. NVRAMs based upon ferroelectric materials (also known as FERAMs) are proven to work in radiation-rich environments and inherently require less power than many other NVRAM technologies. However, fabrication and integration challenges have led to state-of-the-art FERAMs still being fabricated using a 130nm process while competing phase-change memory (PRAM) has been demonstrated with a 20nm process. Use of block copolymer lithography is a promising approach to patterning at the sub-32nm scale, but is currently limited to self-assembly directly on Si or SiO{sub 2} layers. Successful integration of ferroelectrics with discrete and addressable features of {approx}15-20nm would represent a 100-fold improvement in areal memory density and would enable more highly integrated electronic devices required for systems advances. Towards this end, we have developed a technique that allows us to carry out block copolymer self-assembly directly on a huge variety of different materials and have investigated the fabrication, integration, and characterization of electroceramic materials - primarily focused on solution-derived ferroelectrics - with discrete features of {approx}20nm and below. Significant challenges remain before such techniques will be capable of fabricating fully integrated NVRAM devices, but the tools developed for this effort are already finding broader use. This report introduces the nanopatterned NVRAM device concept as a mechanism for motivating the subsequent studies, but the bulk of the document will focus on the platform and technology development.

  10. Characteristics of AgInSbTe-SiO2 nanocomposite thin film applied to nonvolatile floating gate memory devices.

    PubMed

    Chiang, Kuo-Chang; Hsieh, Tsung-Eong

    2010-10-22

    Nanocomposite thin films containing AgInSbTe (AIST) particles embedded in an SiO(2) matrix was prepared by sputtering deposition and its feasibility for nonvolatile floating gate memory (NFGM) was investigated. The sample subjected to a 400 °C annealing exhibited a distinct hysteresis memory window (ΔV(FB)) shift = 6.6 V and charge density = 5.2 × 10(12) cm(-2) after ± 8 V gate voltage sweep. Electrical measurement revealed the current transport is via the Schottky emission in low applied field and the space-charge-limited conduction mechanism in high applied field in the samples, regardless of their thermal history. Transmission electron microscopy and x-ray photoelectron spectroscopy indicated that the metallic Sb(2)Te nanocrystals (NCs) with diameters about 5-7 nm dispersed in a nanocomposite layer may serve as the discrete charge-storage traps for nonvolatile memory. Analytical results illustrate the utilization of an AIST-SiO(2) nanocomposite layer as the core structure of NFGM devices is able to simplify the device structure and fabrication process.

  11. Electrostatic Switching in Vertically Oriented Nanotubes for Nonvolatile Memory Applications

    NASA Technical Reports Server (NTRS)

    Kaul, Anupama B.; Khan, Paul; Jennings, Andrew T.; Greer, Julia R.; Megerian, Krikor G.; Allmen, Paul von

    2009-01-01

    We have demonstrated electrostatic switching in vertically oriented nanotubes or nanofibers, where a nanoprobe was used as the actuating electrode inside an SEM. When the nanoprobe was manipulated to be in close proximity to a single tube, switching voltages between 10 V - 40 V were observed, depending on the geometrical parameters. The turn-on transitions appeared to be much sharper than the turn-off transitions which were limited by the tube-to-probe contact resistances. In many cases, stiction forces at these dimensions were dominant, since the tube appeared stuck to the probe even after the voltage returned to 0 V, suggesting that such structures are promising for nonvolatile memory applications. The stiction effects, to some extent, can be adjusted by engineering the switch geometry appropriately. Nanoscale mechanical measurements were also conducted on the tubes using a custom-built anoindentor inside an SEM, from which preliminary material parameters, such as the elastic modulus, were extracted. The mechanical measurements also revealed that the tubes appear to be well adhered to the substrate. The material parameters gathered from the mechanical measurements were then used in developing an electrostatic model of the switch using a commercially available finite-element simulator. The calculated pull-in voltages appeared to be in agreement to the experimentally obtained switching voltages to first order.

  12. Nonvolatile Memory Solution for Near-Term NASA Missions

    NASA Technical Reports Server (NTRS)

    Patel, J. U.; Blaes, B. R.; Mojarradi, M. M.

    2001-01-01

    Nonvolatile memory (NVM) system that could reliably function in extreme environments is one of the most critical components for many spacecrafts being developed for NASA missions to be launched in next four to seven years. NVM supports the computer system in saving and updating critical state data required for a warm restart after power cycling or in case of a power bus failure. It also provides a power independent mass storage capacity for the scientific data gathered by the instruments. In some cases the window for gathering such data is very small and occurs only once in a given mission. Commercially popular and fully developed Flash NVM technology is inappropriate for many reasons such as the limited read write cycles with slower access speeds, radiation intolerance, higher Single Event Upsets (SEU) rates, etc. It is desirable to have an NVM system based upon a robust cell technology making it immune to the SEUs and with sufficient radiation hardness. Availability of such NVM system seems to be still 5 to 10 years in the future. Meanwhile, it is possible to provide an interim hybrid solution by combining the existing rad-hard technologies. Additional information is contained in the original extended abstract.

  13. Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blends

    PubMed Central

    Zhou, Ye; Han, Su-Ting; Yan, Yan; Zhou, Li; Huang, Long-Biao; Zhuang, Jiaqing; Sonar, Prashant; Roy, V. A. L.

    2015-01-01

    Flexible memory cell array based on high mobility donor-acceptor diketopyrrolopyrrole polymer has been demonstrated. The memory cell exhibits low read voltage, high cell-to-cell uniformity and good mechanical flexibility, and has reliable retention and endurance memory performance. The electrical properties of the memory devices are systematically investigated and modeled. Our results suggest that the polymer blends provide an important step towards high-density flexible nonvolatile memory devices. PMID:26029856

  14. Nonvolatile ``AND,'' ``OR,'' and ``NOT'' Boolean logic gates based on phase-change memory

    NASA Astrophysics Data System (ADS)

    Li, Y.; Zhong, Y. P.; Deng, Y. F.; Zhou, Y. X.; Xu, L.; Miao, X. S.

    2013-12-01

    Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices.

  15. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    SciTech Connect

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong

    2014-10-20

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  16. Radiation Tests of Highly Scaled, High-Density, Commercial, Nonvolatile NAND Flash Memories - Update 2010

    NASA Technical Reports Server (NTRS)

    Irom, Farokh; Nguyen, Duc N.

    2010-01-01

    High-density, commercial, nonvolatile flash memories with NAND architecture are now available from several manufacturers. This report examines SEE effects and TID response in single-level cell (SLC) and multi-level cell (MLC) NAND flash memories manufactured by Micron Technology.

  17. Radiation Tests of Highly scaled, High-Density, Commercial, Nonvolatile NAND Flash Memories--Update 2011

    NASA Technical Reports Server (NTRS)

    Irom, Farokh; Nguyen, Duc N.

    2011-01-01

    High-density, commercial, nonvolatile flash memories with NAND architecture are now available from several manufacturers. This report examines SEE effects and TID response in single-level cell (SLC) 32Gb and multi-level cell (MLC) 64Gb NAND flash memories manufactured by Micron Technology.

  18. The retention characteristics of nonvolatile SNOS memory transistors in a radiation environment: Experiment and model

    SciTech Connect

    McWhorter, P.J.; Miller, S.L.; Dellin, T.A.; Axness, C.L.

    1987-01-01

    Experimental data and a model to accurately and quantitatively predict the data are presented for retention of SNOS memory devices over a wide range of dose rates. A wide range of SNOS stack geometries are examined. The model is designed to aid in screening nonvolatile memories for use in a radiation environment.

  19. SiCOH-based resistive random access memory for backend of line compatible nonvolatile memory application

    NASA Astrophysics Data System (ADS)

    Zheng, Liang; Dai, Ya-Wei; Yu, Lin-Jie; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

    2017-04-01

    We investigated the resistive switching characteristics of a SiCOH low-k-material-based resistive random access memory (RRAM) in this study. This SiCOH-based RRAM is fully compatible with backend CMOS technology, which is extremely important for its applicability. The device demonstrated here had higher performance characteristics than a conventional SiO2-based RRAM, such as a higher ON/OFF ratio (around 102), and a higher cycling endurance in an ambient environment. Taken together, these characteristics make the device a promising candidate for next-generation nonvolatile applications.

  20. Non-volatile memory based on transition metal perovskite oxide resistance switching

    NASA Astrophysics Data System (ADS)

    Nian, Yibo

    Driven by the non-volatile memory market looking for new advanced materials, this dissertation focuses on the study of non-volatile resistive random access memory (RRAM) based on transition metal perovskite oxides. Pr0.7Ca0.3MnO3 (PCMO), one of the representative materials in this family, has demonstrated a large range of resistance change when short electrical pulses with different polarity are applied. Such electrical-pulse-induced resistance (EPIR), with attractive features such as fast response, low power, high-density and non-volatility, makes PCMO and related materials promising candidates for non-volatile RRAM application. The objective of this work is to investigate, optimize and understand the properties of this universal EPIR behavior in transition metal perovskite oxide, represented by PCMO thin film devices. The research work includes fabrication of PCMO thin film devices, characterization of these EPIR devices as non-volatile memories, and investigation of their resistive switching mechanisms. The functionality of this perovskite oxide RRAM, including pulse magnitude/width dependence, power consumption, retention, endurance and radiation-hardness has been investigated. By studying the "shuttle tail" in hysteresis switching loops of oxygen deficient devices, a diffusion model with oxygen ions/vacancies as active agents at the metal/oxide interface is proposed for the non-volatile resistance switching effect in transition metal perovskite oxide thin films. The change of EPIR switching behavior after oxygen/argon ion implantation also shows experiment support for the proposed model. Furthermore, the universality, scalability and comparison with other non-volatile memories are discussed for future application.

  1. Molecular floating-gate organic nonvolatile memory with a fully solution processed core architecture

    NASA Astrophysics Data System (ADS)

    Wu, Chao; Wang, Wei; Song, Junfeng

    2016-11-01

    In this paper, we demonstrated a floating-gate organic thin film transistor based nonvolatile memory, in which the core architecture was processed by a sequential three-step solution spin-coating method. The molecular semiconductor 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-Pen) distributing in the matrix of polymer poly(styrene) (PS), acting as the floating-gate and tunneling layer, respectively, was processed by one-step spin-coating from their blending solution. The effect of the proportion of TIPS-Pen in the matrix of PS on the memory performances of devices was researched. As a result, a good nonvolatile memory was achieved, with a memory window larger than 25 V, stable memory endurance property over 500 cycles and retention time longer than 5000 s with a high memory ratio larger than 102, at an optimal proportion of TIPS-Pen in the matrix of PS.

  2. Multilevel resistive switching nonvolatile memory based on MoS2 nanosheet-embedded graphene oxide

    NASA Astrophysics Data System (ADS)

    Shin, Gwang Hyuk; Kim, Choong-Ki; Bang, Gyeong Sook; Kim, Jong Yun; Jang, Byung Chul; Koo, Beom Jun; Woo, Myung Hun; Choi, Yang-Kyu; Choi, Sung-Yool

    2016-09-01

    An increasing demand for nonvolatile memory has driven extensive research on resistive switching memory because it uses simple structures with high density, fast switching speed, and low power consumption. To improve the storage density, the application of multilevel cells is among the most promising solutions, including three-dimensional cross-point array architectures. Two-dimensional nanomaterials have several advantages as resistive switching media, including flexibility, low cost, and simple fabrication processes. However, few reports exist on multilevel nonvolatile memory and its switching mechanism. We herein present a multilevel resistive switching memory based on graphene oxide (GO) and MoS2 fabricated by a simple spin-coating process. Metallic 1T-MoS2 nanosheets, chemically exfoliated by Li intercalation, were successfully embedded between two GO layers as charge-trapping sites. The resulting stacks of GO/MoS2/GO exhibited excellent nonvolatile memory performance with at least four resistance states, >102 endurance cycles, and >104 s retention time. Furthermore, the charge transport mechanism was systematically investigated through the analysis of low-frequency 1/f noise in various resistance states, which could be modulated by the input voltage bias in the negative differential resistance region. Accordingly, we propose a strategy to achieve multilevel nonvolatile memory in which the stacked layers of two-dimensional nanosheets are utilized as resistive and charge-storage materials.

  3. The role of non-volatile memory from an application perspective

    SciTech Connect

    Kettering, Brett M; Nunez, James A

    2010-09-16

    Current, emerging, and future NVM (non-volatile memory) technologies give us hope that we will be able to architect HPC (high performance computing) systems that initially use them in a memory and storage hierarchy, and eventually use them as the memory and storage for the system, complete with ownership and protections as a HDD-based (hard-disk-drive-based) file system provides today.

  4. Hf-based high-k materials for Si nanocrystal floating gate memories

    PubMed Central

    2011-01-01

    Pure and Si-rich HfO2 layers fabricated by radio frequency sputtering were utilized as alternative tunnel oxide layers for high-k/Si-nanocrystals-SiO2/SiO2 memory structures. The effect of Si incorporation on the properties of Hf-based tunnel layer was investigated. The Si-rich SiO2 active layers were used as charge storage layers, and their properties were studied versus deposition conditions and annealing treatment. The capacitance-voltage measurements were performed to study the charge trapping characteristics of these structures. It was shown that with specific deposition conditions and annealing treatment, a large memory window of about 6.8 V is achievable at a sweeping voltage of ± 6 V, indicating the utility of these stack structures for low-operating-voltage nonvolatile memory devices. PMID:21711676

  5. A power-efficient and non-volatile programmable logic array based on phase change memory

    NASA Astrophysics Data System (ADS)

    Du, Yuan; Ye, Yong; Kang, Yong; Xia, Yangyang; Song, Zhitang; Chen, Bomy

    2016-10-01

    Recently, numerous efforts have been made on NVM-based Field Programmable Gate Arrays (FPGAs) because the emerging non-volatile memory (NVM) technologies have the advantages of lower leakage power and higher density than Static Random Access Memory (SRAM) technology. However, the cost and the scale of FPGAs are so high and large that they can't be applied in the consumer electronics field and Internet of Things (IoT). Due to the small scale and low cost, Programmable Logic Array (PLA) is an ideal option for these fields. However, up to now there are few researches on non-volatile PLA based on emerging NVMs. In this paper, a power-efficient non-volatile PLA based on Phase Change Memory (PCM) is proposed. The proposed non-volatile PLA architecture has been evaluated using the 40 nm Complementary Metal Oxide Semiconductor (CMOS) technology, and the simulation results show the correct functionality of the PLA. After the PLA reads the configuration bits from the non-volatile programmable elements (PEs), the power of the programmable elements can be OFF. Therefore, the standby power of the programmable elements is much smaller than that of the commonly SRAM-based PLAs. The simulation results also show that the total power of nvPLA is reduced by about 53.6% when the supply power of Programmable Element is OFF.

  6. Physical principles and current status of emerging non-volatile solid state memories

    NASA Astrophysics Data System (ADS)

    Wang, L.; Yang, C.-H.; Wen, J.

    2015-07-01

    Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for

  7. High-performance black phosphorus top-gate ferroelectric transistor for nonvolatile memory applications

    NASA Astrophysics Data System (ADS)

    Lee, Young Tack; Hwang, Do Kyung; Choi, Won Kook

    2016-10-01

    Two-dimensional (2D) van der Waals (vdW) atomic crystals have been extensively studied and significant progress has been made. The newest 2D vdW material, called black phosphorus (BP), has attracted considerable attention due to its unique physical properties, such as its being a singlecomponent material like graphene, and its having a high mobility and direct band gap. Here, we report on a high-performance BP nanosheet based ferroelectric field effect transistor (FeFET) with a poly(vinylidenefluoride-trifluoroethylene) top-gate insulator for a nonvolatile memory application. The BP FeFETs show the highest linear hole mobility of 563 cm2/Vs and a clear memory window of more than 15 V. For more advanced nonvolatile memory circuit applications, two different types of resistive-load and complementary ferroelectric memory inverters were implemented, which showed distinct memory on/off switching characteristics.

  8. Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps

    PubMed Central

    Suga, Hiroshi; Suzuki, Hiroya; Shinomura, Yuma; Kashiwabara, Shota; Tsukagoshi, Kazuhito; Shimizu, Tetsuo; Naitoh, Yasuhisa

    2016-01-01

    Highly stable, nonvolatile, high-temperature memory based on resistance switching was realized using a polycrystalline platinum (Pt) nanogap. The operating temperature of the memory can be drastically increased by the presence of a sharp-edged Pt crystal facet in the nanogap. A short distance between the facet edges maintains the nanogap shape at high temperature, and the sharp shape of the nanogap densifies the electric field to maintain a stable current flow due to field migration. Even at 873 K, which is a significantly higher temperature than feasible for conventional semiconductor memory, the nonvolatility of the proposed memory allows stable ON and OFF currents, with fluctuations of less than or equal to 10%, to be maintained for longer than eight hours. An advantage of this nanogap scheme for high-temperature memory is its secure operation achieved through the assembly and disassembly of a Pt needle in a high electric field. PMID:27725705

  9. Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps

    NASA Astrophysics Data System (ADS)

    Suga, Hiroshi; Suzuki, Hiroya; Shinomura, Yuma; Kashiwabara, Shota; Tsukagoshi, Kazuhito; Shimizu, Tetsuo; Naitoh, Yasuhisa

    2016-10-01

    Highly stable, nonvolatile, high-temperature memory based on resistance switching was realized using a polycrystalline platinum (Pt) nanogap. The operating temperature of the memory can be drastically increased by the presence of a sharp-edged Pt crystal facet in the nanogap. A short distance between the facet edges maintains the nanogap shape at high temperature, and the sharp shape of the nanogap densifies the electric field to maintain a stable current flow due to field migration. Even at 873 K, which is a significantly higher temperature than feasible for conventional semiconductor memory, the nonvolatility of the proposed memory allows stable ON and OFF currents, with fluctuations of less than or equal to 10%, to be maintained for longer than eight hours. An advantage of this nanogap scheme for high-temperature memory is its secure operation achieved through the assembly and disassembly of a Pt needle in a high electric field.

  10. Fabrication and characterization of non-volatile transistor memory based on polypeptide as gate dielectric

    NASA Astrophysics Data System (ADS)

    Liang, Lijuan; Li, LianFang; Wei, Xianfu; Huang, Beiqing; Wei, Yen

    2017-01-01

    The organic thin film transistor (OTFT) fabricated with the polypeptide as a dielectric layer shows memory function. In order to investigate the effect of polypeptide structure on the performance of non-volatile transistor memory, the Fourier-transform IR (FT- IR) and Circular Dichiroism (CD) spectral of PMLG film has been applied, respectively. In conclusion, the memory transistor device fabricated with polypeptide as the ferroelectric exhibit promising behavior such as a large memory window, and the dipole moment of the amide group was considered as the main source of the memory function.

  11. Nonvolatile multilevel conductance and memory effects in organic thin films

    NASA Astrophysics Data System (ADS)

    Lauters, M.; McCarthy, B.; Sarid, D.; Jabbour, G. E.

    2005-12-01

    Organic thin-film structures, including organic light-emitting diodes, are demonstrated to contain multiple nonvolatile conductance states at low-read voltages. Retention time of states is more than several weeks, and more than 20 000 write-read-rewrite-read cycles have been performed with minimal degradation. The electrical characteristics of these devices are consistent with metal diffusion or filament phenomena found in metal-insulator-metal structures, suggesting a possible mechanism by which the states are stored.

  12. A Nonvolatile MOSFET Memory Device Based on Mobile Protons in SiO(2) Thin Films

    SciTech Connect

    Vanheusden, K.; Warren, W.L.; Devine, R.A.B.; Fleetwood, D.M.; Draper, B.L.; Schwank, J.R.

    1999-03-02

    It is shown how mobile H{sup +} ions can be generated thermally inside the oxide layer of Si/SiO{sub 2}/Si structures. The technique involves only standard silicon processing steps: the nonvolatile field effect transistor (NVFET) is based on a standard MOSFET with thermally grown SiO{sub 2} capped with a poly-silicon layer. The capped thermal oxide receives an anneal at {approximately}1100 C that enables the incorporation of the mobile protons into the gate oxide. The introduction of the protons is achieved by a subsequent 500-800 C anneal in a hydrogen-containing ambient, such as forming gas (N{sub 2}:H{sub 2} 95:5). The mobile protons are stable and entrapped inside the oxide layer, and unlike alkali ions, their space-charge distribution can be controlled and rapidly rearranged at room temperature by an applied electric field. Using this principle, a standard MOS transistor can be converted into a nonvolatile memory transistor that can be switched between normally on and normally off. Switching speed, retention, endurance, and radiation tolerance data are presented showing that this non-volatile memory technology can be competitive with existing Si-based non-volatile memory technologies such as the floating gate technologies (e.g. Flash memory).

  13. Review of Emerging New Solid-State Non-Volatile Memories

    NASA Astrophysics Data System (ADS)

    Fujisaki, Yoshihisa

    2013-04-01

    The integration limit of flash memories is approaching, and many new types of memory to replace conventional flash memories have been proposed. Unlike flash memories, new nonvolatile memories do not require storage of electric charges. The possibility of phase-change random-access memories (PCRAMs) or resistive-change RAMs (ReRAMs) replacing ultrahigh-density NAND flash memories has been investigated; however, many issues remain to be overcome, making the replacement difficult. Nonetheless, ferroelectric RAMs (FeRAMs) and magnetoresistive RAMs (MRAMs) are gradually penetrating into fields where the shortcomings of flash memories, such as high operating voltage, slow rewriting speed, and limited number of rewrites, make their use inconvenient. For instance, FeRAMs are widely used in ICs that require low power consumption such as smart cards and wireless tags. MRAMs are used in many kinds of controllers in industrial equipment that require high speed and unlimited rewrite operations. For successful application of new non-volatile semiconductor memories, such memories must be practically utilized in new fields in which flash memories are not applicable, and their technologies must be further developed.

  14. A review of emerging non-volatile memory (NVM) technologies and applications

    NASA Astrophysics Data System (ADS)

    Chen, An

    2016-11-01

    This paper will review emerging non-volatile memory (NVM) technologies, with the focus on phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM), resistive random-access-memory (RRAM), and ferroelectric field-effect-transistor (FeFET) memory. These promising NVM devices are evaluated in terms of their advantages, challenges, and applications. Their performance is compared based on reported parameters of major industrial test chips. Memory selector devices and cell structures are discussed. Changing market trends toward low power (e.g., mobile, IoT) and data-centric applications create opportunities for emerging NVMs. High-performance and low-cost emerging NVMs may simplify memory hierarchy, introduce non-volatility in logic gates and circuits, reduce system power, and enable novel architectures. Storage-class memory (SCM) based on high-density NVMs could fill the performance and density gap between memory and storage. Some unique characteristics of emerging NVMs can be utilized for novel applications beyond the memory space, e.g., neuromorphic computing, hardware security, etc. In the beyond-CMOS era, emerging NVMs have the potential to fulfill more important functions and enable more efficient, intelligent, and secure computing systems.

  15. Electrostatically transparent graphene quantum-dot trap layers for efficient nonvolatile memory

    SciTech Connect

    Kim, Young Rae; Jo, Yong Eun; Sung, Yeo Hyun; Won, Ui Yeon; Shin, Yong Seon; Kang, Won Tae; Yu, Woo Jong E-mail: micco21@skku.edu; Lee, Young Hee E-mail: micco21@skku.edu

    2015-03-09

    In this study, we have demonstrated nonvolatile memory devices using graphene quantum-dots (GQDs) trap layers with indium zinc oxide (IZO) semiconductor channel. The Fermi-level of GQD was effectively modulated by tunneling electrons near the Dirac point because of limited density of states and weak electrostatic screening in monolayer graphene. As a result, large gate modulation was driven in IZO channel to achieve a subthreshold swing of 5.21 V/dec (300 nm SiO{sub 2} gate insulator), while Au quantum-dots memory shows 15.52 V/dec because of strong electrostatic screening in metal quantum-dots. Together, discrete charge traps of GQDs enable stable performance in the endurance test beyond 800 cycles of programming and erasing. Our study suggests the exciting potential of GQD trap layers to be used for a highly promising material in non-volatile memory devices.

  16. Non-volatile memory with self-assembled ferrocene charge trapping layer

    NASA Astrophysics Data System (ADS)

    Zhu, Hao; Hacker, Christina A.; Pookpanratana, Sujitra J.; Richter, Curt A.; Yuan, Hui; Li, Haitao; Kirillov, Oleg; Ioannou, Dimitris E.; Li, Qiliang

    2013-07-01

    A metal/oxide/molecule/oxide/Si capacitor structure containing redox-active ferrocene molecules has been fabricated for non-volatile memory application. Cyclic voltammetry and X-ray photoelectron spectroscopy were used to measure the molecules in the structure, showing that the molecules attach on SiO2/Si and the molecules are functional after device fabrication. These solid-state molecular memory devices have fast charge-storage speed and can endure more than 109 program/erase cycles. This excellent performance is derived from the intrinsic properties of the redox-active molecules and the hybrid Si-molecular device structure. These molecular devices are very attractive for future high-level non-volatile memory applications.

  17. Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Yau, H. M.; Yan, Z. B.; Chan, N. Y.; Au, K.; Wong, C. M.; Leung, C. W.; Zhang, F. Y.; Gao, X. S.; Dai, J. Y.

    2015-08-01

    Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.

  18. Flexible non-volatile memory devices based on organic semiconductors

    NASA Astrophysics Data System (ADS)

    Cosseddu, Piero; Casula, Giulia; Lai, Stefano; Bonfiglio, Annalisa

    2015-09-01

    The possibility of developing fully organic electronic circuits is critically dependent on the ability to realize a full set of electronic functionalities based on organic devices. In order to complete the scene, a fundamental element is still missing, i.e. reliable data storage. Over the past few years, a considerable effort has been spent on the development and optimization of organic polymer based memory elements. Among several possible solutions, transistor-based memories and resistive switching-based memories are attracting a great interest in the scientific community. In this paper, a route for the fabrication of organic semiconductor-based memory devices with performances beyond the state of the art is reported. Both the families of organic memories will be considered. A flexible resistive memory based on a novel combination of materials is presented. In particular, high retention time in ambient conditions are reported. Complementary, a low voltage transistor-based memory is presented. Low voltage operation is allowed by an hybrid, nano-sized dielectric, which is also responsible for the memory effect in the device. Thanks to the possibility of reproducibly fabricating such device on ultra-thin substrates, high mechanical stability is reported.

  19. Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory.

    PubMed

    Ng, Tse Nga; Schwartz, David E; Lavery, Leah L; Whiting, Gregory L; Russo, Beverly; Krusor, Brent; Veres, Janos; Bröms, Per; Herlogsson, Lars; Alam, Naveed; Hagel, Olle; Nilsson, Jakob; Karlsson, Christer

    2012-01-01

    Scalable circuits of organic logic and memory are realized using all-additive printing processes. A 3-bit organic complementary decoder is fabricated and used to read and write non-volatile, rewritable ferroelectric memory. The decoder-memory array is patterned by inkjet and gravure printing on flexible plastics. Simulation models for the organic transistors are developed, enabling circuit designs tolerant of the variations in printed devices. We explain the key design rules in fabrication of complex printed circuits and elucidate the performance requirements of materials and devices for reliable organic digital logic.

  20. Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory

    PubMed Central

    Ng, Tse Nga; Schwartz, David E.; Lavery, Leah L.; Whiting, Gregory L.; Russo, Beverly; Krusor, Brent; Veres, Janos; Bröms, Per; Herlogsson, Lars; Alam, Naveed; Hagel, Olle; Nilsson, Jakob; Karlsson, Christer

    2012-01-01

    Scalable circuits of organic logic and memory are realized using all-additive printing processes. A 3-bit organic complementary decoder is fabricated and used to read and write non-volatile, rewritable ferroelectric memory. The decoder-memory array is patterned by inkjet and gravure printing on flexible plastics. Simulation models for the organic transistors are developed, enabling circuit designs tolerant of the variations in printed devices. We explain the key design rules in fabrication of complex printed circuits and elucidate the performance requirements of materials and devices for reliable organic digital logic. PMID:22900143

  1. Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory

    NASA Astrophysics Data System (ADS)

    Ng, Tse Nga; Schwartz, David E.; Lavery, Leah L.; Whiting, Gregory L.; Russo, Beverly; Krusor, Brent; Veres, Janos; Bröms, Per; Herlogsson, Lars; Alam, Naveed; Hagel, Olle; Nilsson, Jakob; Karlsson, Christer

    2012-08-01

    Scalable circuits of organic logic and memory are realized using all-additive printing processes. A 3-bit organic complementary decoder is fabricated and used to read and write non-volatile, rewritable ferroelectric memory. The decoder-memory array is patterned by inkjet and gravure printing on flexible plastics. Simulation models for the organic transistors are developed, enabling circuit designs tolerant of the variations in printed devices. We explain the key design rules in fabrication of complex printed circuits and elucidate the performance requirements of materials and devices for reliable organic digital logic.

  2. Transparent and flexible nonvolatile memory using poly(methylsilsesquioxane) dielectric embedded with cadmium selenide quantum dots

    NASA Astrophysics Data System (ADS)

    Ooi, Poh Choon; Li, Fushan; Perumal Veeramalai, Chandrasekar; Guo, Tailiang

    2014-12-01

    In this work, a transparent and flexible nonvolatile memory was fabricated using a solution process. The conduction mechanisms of the metal/insulator/metal structure consisting of cadmium selenide quantum dots embedded in poly(methylsilsesquioxane) dielectric layers were investigated in terms of current-voltage characteristics. The memory device is reprogrammable and stable up to 1 × 104 s with little deterioration and a distinct ON/OFF ratio of 104. Endurance cycle and retention tests of the as-fabricated memory device were also carried out. The results indicate that the device has good operating stability.

  3. Hydrogen annealing of silicon gate-nitride-oxide-silicon nonvolatile memory devices

    NASA Astrophysics Data System (ADS)

    Topich, James A.; Turi, Raymond A.

    1982-10-01

    A hydrogen annealing study of silicon gate-nitride-oxide-silicon (SNOS) nonvolatile memory devices showed that the important parameter in determining the optimum hydrogen annealing temperature for maximum charge retention is the previous thermal history of the memory devices. If a memory device's charge retention is not degraded by high-temperature processing, then the hydrogen anneal should be at the silicon nitride deposition temperature. If a device is degraded by high-temperature processing, then the hydrogen anneal should be at the degradation temperature.

  4. Improved memory characteristics of charge trap memory by employing double layered ZrO2 nanocrystals and inserted Al2O3

    NASA Astrophysics Data System (ADS)

    Tang, Z. J.; Li, R.; Zhang, X. W.; Hu, D.; Zhao, Y. G.

    2016-07-01

    The charge trap memory capacitors incorporating a stacked charge trapping layer consisting of double layered ZrO2 nanocrystals (NCs) and inserted Al2O3 have been fabricated and investigated. It is observed that the memory capacitor with stacked trapping layer exhibits a hysteresis window as large as 14.3 V for ±10 V sweeping gate voltage range, faster program/erase speed, improved endurance performance, and good data retention characteristics with smaller extrapolated ten years charge loss at room temperature and 125 °C compared to single layered NCs. The special energy band alignment and the introduced additional traps of double layered ZrO2 NCs and inserted Al2O3 change the trapping and loss behavior of charges, and jointly contribute to the remarkable memory characteristics. Therefore, the memory capacitor with a stacked charge trapping layer is a promising candidate in future nonvolatile charge trap memory device design and application.

  5. Single-Hole Charging and Discharging Phenomena in Carbon Nanotube Field-Effect-Transistor-Based Nonvolatile Memory

    NASA Astrophysics Data System (ADS)

    Ohori, Takahiro; Nagaso, Satoshi; Ohno, Yasuhide; Maehashi, Kenzo; Inoue, Koichi; Matsumoto, Kazuhiko

    2010-06-01

    We have fabricated nonvolatile memory based on top-gated carbon nanotube field-effect transistors (CNTFETs). Two kinds of insulating films, SiNx and SiO2, were deposited to control the hysteresis characteristics after the removal of water molecules around the single-walled CNT channels. The interface between the SiNx and SiO2 films is expected to act as a charge storage node of nonvolatile memory. The fabricated CNTFET-based memory devices clearly exhibited not only a memory effect but also good retention characteristics for charge storage. Furthermore, single-hole charging and discharging phenomena were clearly observed in the CNTFET-based memory devices by reducing the number of carriers trapped in the interface between the SiNx and SiO2 films. These results indicate that the CNTFET-based nonvolatile memory can be potentially used to realize single-electron memory.

  6. Nonvolatile memory functionality of ZnO nanowire transistors controlled by mobile protons.

    PubMed

    Yoon, Jongwon; Hong, Woong-Ki; Jo, Minseok; Jo, Gunho; Choe, Minhyeok; Park, Woojin; Sohn, Jung Inn; Nedic, Stanko; Hwang, Hyungsang; Welland, Mark E; Lee, Takhee

    2011-01-25

    We demonstrated the nonvolatile memory functionality of ZnO nanowire field effect transistors (FETs) using mobile protons that are generated by high-pressure hydrogen annealing (HPHA) at relatively low temperature (400 °C). These ZnO nanowire devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We show that the memory characteristics are attributed to the movement of protons between the Si/SiO(2) interface and the SiO(2)/ZnO nanowire interface by the applied gate electric field. The memory mechanism is explained in terms of the tuning of interface properties, such as effective electric field, surface charge density, and surface barrier potential due to the movement of protons in the SiO(2) layer, consistent with the UV photoresponse characteristics of nanowire memory devices. Our study will further provide a useful route of creating memory functionality and incorporating proton-based storage elements onto a modified CMOS platform for FET memory devices using nanomaterials.

  7. Metal-organic molecular device for non-volatile memory storage

    SciTech Connect

    Radha, B. E-mail: kulkarni@jncasr.ac.in; Sagade, Abhay A.; Kulkarni, G. U. E-mail: kulkarni@jncasr.ac.in

    2014-08-25

    Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organic complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit non-volatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film.

  8. A bi-stable nanoelectromechanical non-volatile memory based on van der Waals force

    NASA Astrophysics Data System (ADS)

    Soon, Bo Woon; Jiaqiang Ng, Eldwin; Qian, You; Singh, Navab; Julius Tsai, Minglin; Lee, Chengkuo

    2013-07-01

    By using complementary-metal-oxide-semiconductor processes, a silicon based bi-stable nanoelectromechanical non-volatile memory is fabricated and characterized. The main feature of this device is an 80 nm wide and 3 μm high silicon nanofin (SiNF) of a high aspect ratio (1:35). The switching mechanism is realized by electrostatic actuation between two lateral electrodes, i.e., terminals. Bi-stable hysteresis behavior is demonstrated when the SiNF maintains its contact to one of the two terminals by leveraging on van der Waals force even after voltage bias is turned off. The compelling results indicate that this design is promising for realization of high density non-volatile memory application due to its nano-scale footprint and zero on-hold power consumption.

  9. Non-volatile memory elements based on the intercalation of organic molecules inside carbon nanotubes

    SciTech Connect

    Meunier, Vincent; Kalinin, Sergei V; Sumpter, Bobby G

    2007-01-01

    We propose a novel class of non-volatile memory elements based on the modification of the transport properties of a conducting carbon nanotube by the presence of a guest molecule having multiple stable orientational states relative to the nanotube that correspond to conducting and non-conducting states. The mechanism, governed by a local gating effect of the molecule on the electronic properties of the nanotube host, is studied using density functional theory. The mechanisms of reversible reading and writing of information are illustrated with a F4 TCNQ molecule encap-sulated inside a metallic carbon nanotube. Our results suggest that this new type of non-volatile memory element is robust, fatigue-free, and can operate at room temperature.

  10. Lateral electric-field-driven non-volatile four-state memory in multiferroic heterostructures

    NASA Astrophysics Data System (ADS)

    Zhou, Cai; Zhang, Chao; Yao, Jinli; Jiang, Changjun

    2016-09-01

    A non-volatile four-state memory is formed using an in-plane side-polarization configuration in a Co/(011) Pb(Mg1/3Nb2/3)O3-PbTiO3 (Co/PMN-PT) heterostructure. The resistivity vs. electric field behavior shows a change from volatile butterfly to looplike to non-volatile butterfly characteristics when the temperature decreases from 290 K to 83 K under an electric field of 10 kV/cm and then increases back to 290 K; this behavior is attributed to the strain-mediated magnetoelectric effect. In addition, the in-plane resistivity of Co film, which was measured using the four-probe technique, can be controlled both electrically and magnetically. Specifically, a non-volatile resistivity is gained by the application of electric field pulses. Additionally, a four-state memory is obtained by co-mediation of the magnetic field and electric field pulses, compared with the two different states achieved under the application of the electric field only, which indicates that our results are highly important for multi-state memory and spintronic devices applications.

  11. Non-volatile flash memory with discrete bionanodot floating gate assembled by protein template.

    PubMed

    Miura, Atsushi; Tsukamoto, Rikako; Yoshii, Shigeo; Yamashita, Ichiro; Uraoka, Yukiharu; Fuyuki, Takashi

    2008-06-25

    We demonstrated non-volatile flash memory fabrication by utilizing uniformly sized cobalt oxide (Co(3)O(4)) bionanodot (Co-BND) architecture assembled by a cage-shaped supramolecular protein template. A fabricated high-density Co-BND array was buried in a metal-oxide-semiconductor field-effect-transistor (MOSFET) structure to use as the charge storage node of a floating nanodot gate memory. We observed a clockwise hysteresis in the drain current-gate voltage characteristics of fabricated BND-embedded MOSFETs. Observed hysteresis obviously indicates a memory operation of Co-BND-embedded MOSFETs due to the charge confinement in the embedded BND and successful functioning of embedded BNDs as the charge storage nodes of the non-volatile flash memory. Fabricated Co-BND-embedded MOSFETs showed good memory properties such as wide memory windows, long charge retention and high tolerance to repeated write/erase operations. A new pathway for device fabrication by utilizing the versatile functionality of biomolecules is presented.

  12. Low-cost fabrication of ternary CuInSe{sub 2} nanocrystals by colloidal route using a novel combination of volatile and non-volatile capping agents

    SciTech Connect

    Chawla, Parul; Narain Sharma, Shailesh Singh, Son

    2014-11-15

    Wet-route synthesis of CuInSe{sub 2} (CISe) nanocrystals has been envisaged with the utilization of the unique combination of coordinating ligand and non coordinating solvent. Our work demonstrates the formation of a single-phase, nearly stoichiometric and monodispersive, stable and well-passivated colloidal ternary CISe nanocrystals (band gap (E{sub g})∼1.16 eV) using a novel combination of ligands; viz. volatile arylamine aniline and non-volatile solvent 1-octadecene. The synthesis and growth conditions have been manoeuvred using the colligative properties of the mixture and thus higher growth temperature (∼250 °C) could be attained that promoted larger grain growth. The beneficial influence of the capping agents (aniline and 1-octadecene) on the properties of chalcopyrite nanocrystals has enabled us to pictorally model the structural, morphological and optoelectronic aspects of CISe nanoparticles. - Graphical abstract: Without resorting to any post-selenization process and using the colligative properties of the mixture comprising of volatile aniline and non-volatile 1-octadecene to manoeuvre the growth conditions to promote Ostwald ripening, a single phase, monodispersive and nearly stoichiometric ternary CISe nanocrystals are formed by wet-synthesis route. - Highlights: • Wet-route synthesis of CISe nanocrystals reported without post-selenization process. • Single-phase, stable and well-passivated colloidal ternary CISe nanocrystals formed. • Novel combination of capping agents: volatile aniline and non-volatile 1-octadecene. • Higher growth temperature attained using the colligative properties of the mixture. • Metallic salts presence explains exp. and theoretical boiling point difference.

  13. A Vertical Organic Transistor Architecture for Fast Nonvolatile Memory.

    PubMed

    She, Xiao-Jian; Gustafsson, David; Sirringhaus, Henning

    2017-02-01

    A new device architecture for fast organic transistor memory is developed, based on a vertical organic transistor configuration incorporating high-performance ambipolar conjugated polymers and unipolar small molecules as the transport layers, to achieve reliable and fast programming and erasing of the threshold voltage shift in less than 200 ns.

  14. A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires

    PubMed Central

    2012-01-01

    In this paper, a silicon-oxide-nitride-silicon nonvolatile memory constructed on an n+-poly-Si nanowire [NW] structure featuring a junctionless [JL] configuration is presented. The JL structure is fulfilled by employing only one in situ heavily phosphorous-doped poly-Si layer to simultaneously serve as source/drain regions and NW channels, thus greatly simplifying the manufacturing process and alleviating the requirement of precise control of the doping profile. Owing to the higher carrier concentration in the channel, the developed JL NW device exhibits significantly enhanced programming speed and larger memory window than its counterpart with conventional undoped-NW-channel. Moreover, it also displays acceptable erase and data retention properties. Hence, the desirable memory characteristics along with the much simplified fabrication process make the JL NW memory structure a promising candidate for future system-on-panel and three-dimensional ultrahigh density memory applications. PMID:22373446

  15. A fast and low-power microelectromechanical system-based non-volatile memory device

    PubMed Central

    Lee, Sang Wook; Park, Seung Joo; Campbell, Eleanor E. B.; Park, Yung Woo

    2011-01-01

    Several new generation memory devices have been developed to overcome the low performance of conventional silicon-based flash memory. In this study, we demonstrate a novel non-volatile memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash memory and the power consumption is lower than other memory devices. PMID:21364559

  16. A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires.

    PubMed

    Su, Chun-Jung; Su, Tuan-Kai; Tsai, Tzu-I; Lin, Horng-Chih; Huang, Tiao-Yuan

    2012-02-29

    In this paper, a silicon-oxide-nitride-silicon nonvolatile memory constructed on an n+-poly-Si nanowire [NW] structure featuring a junctionless [JL] configuration is presented. The JL structure is fulfilled by employing only one in situ heavily phosphorous-doped poly-Si layer to simultaneously serve as source/drain regions and NW channels, thus greatly simplifying the manufacturing process and alleviating the requirement of precise control of the doping profile. Owing to the higher carrier concentration in the channel, the developed JL NW device exhibits significantly enhanced programming speed and larger memory window than its counterpart with conventional undoped-NW-channel. Moreover, it also displays acceptable erase and data retention properties. Hence, the desirable memory characteristics along with the much simplified fabrication process make the JL NW memory structure a promising candidate for future system-on-panel and three-dimensional ultrahigh density memory applications.

  17. All-inorganic spin-cast quantum dot based bipolar nonvolatile resistive memory

    NASA Astrophysics Data System (ADS)

    Kannan, V.; Chae, Y. S.; Ramana, CH. V. V.; Ko, Dong-Sik; Rhee, J. K.

    2011-04-01

    We introduce an all-inorganic solution processed bipolar nonvolatile resistive memory device with quantum dot/metal-metal oxide/quantum dot structure. The two terminal device exhibits excellent switching characteristics with ON/OFF ratio >103. The device maintained its state even after removal of the bias voltage. The switching time is faster than 50 ns. Device did not show degradation after 1-h retention test at 150 °C. The memory functionality was consistent even after multiple cycles of operation and the device is reproducible. The switching mechanism is discussed on the basis of charge trapping in quantum dots with metal oxide serving as the barrier.

  18. Nonvolatile transtance change random access memory based on magnetoelectric P(VDF-TrFE)/Metglas heterostructures

    NASA Astrophysics Data System (ADS)

    Lu, Peipei; Shang, Dashan; Shen, Jianxin; Chai, Yisheng; Yang, Chuansen; Zhai, Kun; Cong, Junzhuang; Shen, Shipeng; Sun, Young

    2016-12-01

    Transtance change random access memory (TCRAM) is a type of nonvolatile memory based on the nonlinear magnetoelectric coupling effects of multiferroics. In this work, ferroelectric P(VDF-TrFE) thin films were prepared on Metglas foil substrates by the sol-gel technique to form multiferroic heterostructures. The magnetoelectric voltage coefficient of the heterostructure can be switched reproducibly to different levels between positive and negative values by applying selective electric-field pulses. Compared with bulk multiferroic heterostructures, the polarization switching voltage was reduced to 7 V. Our facile technological approach enables this organic magnetoelectric heterostructure as a promising candidate for the applications in multilevel TCRAM devices.

  19. Reconfigurable Electronics and Non-Volatile Memory Research

    DTIC Science & Technology

    2015-11-10

    film structure of the materials. Additionally, the migration of metal between layers of the layered phase change memory stack was investigated...each of which extends to a metal pad for wirebonding or electrical probing access (Figure 1, right); 2) a 10 x 10 cross point array of via structured ...Unless otherwise indicated, all devices were fabricated with the IC stack structure , with the active Ge2Se3 layer replaced by the metal cosputtered

  20. Magnetically induced nonvolatile magnetoresistance and resistance memory effect in phase-separated manganite thin films

    NASA Astrophysics Data System (ADS)

    Li, Qian; Cao, Qingqi; Wang, Dunhui; Du, Youwei

    2017-03-01

    We report the observation of magnetically induced resistance memory effect in a typical electronic phase-separated manganite La5/8‑x Pr x Ca3/8MnO3 (x  =  0.3) thin film. In the hysteresis region of metal-to-insulator transition, the resistance exhibits a sharp drop with the application of magnetic field and maintains the low resistance state after the removal of field, showing a nonvolatile magnetoresistance effect. The high resistance state can be recovered until the temperature is warmed. More explicit measurements at the hysteresis region exhibit the non-volatility and irreversibility of magnetoresistance, which can be ascribed to the percolative feature in the electronic phase-separated manganite. The origin and potential applications of these interesting effects are discussed.

  1. Low-cost fabrication of ternary CuInSe2 nanocrystals by colloidal route using a novel combination of volatile and non-volatile capping agents

    NASA Astrophysics Data System (ADS)

    Chawla, Parul; Narain Sharma, Shailesh; Singh, Son

    2014-11-01

    Wet-route synthesis of CuInSe2 (CISe) nanocrystals has been envisaged with the utilization of the unique combination of coordinating ligand and non coordinating solvent. Our work demonstrates the formation of a single-phase, nearly stoichiometric and monodispersive, stable and well-passivated colloidal ternary CISe nanocrystals (band gap (Eg)~1.16 eV) using a novel combination of ligands; viz. volatile arylamine aniline and non-volatile solvent 1-octadecene. The synthesis and growth conditions have been manoeuvred using the colligative properties of the mixture and thus higher growth temperature (~250 °C) could be attained that promoted larger grain growth. The beneficial influence of the capping agents (aniline and 1-octadecene) on the properties of chalcopyrite nanocrystals has enabled us to pictorally model the structural, morphological and optoelectronic aspects of CISe nanoparticles.

  2. Radiation Tests of Highly Scaled, High-Density, Commercial, Nonvolatile NAND Flash Memories - Update 2012

    NASA Technical Reports Server (NTRS)

    Irom, Farokh; Allen, Gregory R.

    2012-01-01

    The space radiation environment poses a certain risk to all electronic components on Earth-orbiting and planetary mission spacecraft. In recent years, there has been increased interest in the use of high-density, commercial, nonvolatile flash memories in space because of ever-increasing data volumes and strict power requirements. They are used in a wide variety of spacecraft subsystems. At one end of the spectrum, flash memories are used to store small amounts of mission-critical data such as boot code or configuration files and, at the other end, they are used to construct multi-gigabyte data recorders that record mission science data. This report examines single-event effect (SEE) and total ionizing dose (TID) response in single-level cell (SLC) 32-Gb, multi-level cell (MLC) 64-Gb, and Triple-level (TLC) 64-Gb NAND flash memories manufactured by Micron Technology with feature size of 25 nm.

  3. High performance nonvolatile memory devices based on Cu2-xSe nanowires

    NASA Astrophysics Data System (ADS)

    Wu, Chun-Yan; Wu, Yi-Liang; Wang, Wen-Jian; Mao, Dun; Yu, Yong-Qiang; Wang, Li; Xu, Jun; Hu, Ji-Gang; Luo, Lin-Bao

    2013-11-01

    We report on the rational synthesis of one-dimensional Cu2-xSe nanowires (NWs) via a solution method. Electrical analysis of Cu2-xSe NWs based memory device exhibits a stable and reproducible bipolar resistive switching behavior with a low set voltage (0.3-0.6 V), which can enable the device to write and erase data efficiently. Remarkably, the memory device has a record conductance switching ratio of 108, much higher than other devices ever reported. At last, a conducting filaments model is introduced to account for the resistive switching behavior. The totality of this study suggests that the Cu2-xSe NWs are promising building blocks for fabricating high-performance and low-consumption nonvolatile memory devices.

  4. Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device.

    PubMed

    Liu, Dongjue; Lin, Qiqi; Zang, Zhigang; Wang, Ming; Wangyang, Peihua; Tang, Xiaosheng; Zhou, Miao; Hu, Wei

    2017-02-22

    All-inorganic perovskite CsPbX3 (X = Cl, Br, or I) is widely used in a variety of photoelectric devices such as solar cells, light-emitting diodes, lasers, and photodetectors. However, studies to understand the flexible CsPbX3 electrical application are relatively scarce, mainly due to the limitations of the low-temperature fabricating process. In this study, all-inorganic perovskite CsPbBr3 films were successfully fabricated at 75 °C through a two-step method. The highly crystallized films were first employed as a resistive switching layer in the Al/CsPbBr3/PEDOT:PSS/ITO/PET structure for flexible nonvolatile memory application. The resistive switching operations and endurance performance demonstrated the as-prepared flexible resistive random access memory devices possess reproducible and reliable memory characteristics. Electrical reliability and mechanical stability of the nonvolatile device were further tested by the robust current-voltage curves under different bending angles and consecutive flexing cycles. Moreover, a model of the formation and rupture of filaments through the CsPbBr3 layer was proposed to explain the resistive switching effect. It is believed that this study will offer a new setting to understand and design all-inorganic perovskite materials for future stable flexible electronic devices.

  5. Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires.

    PubMed

    Wu, Di; Jiang, Yang; Yu, Yongqiang; Zhang, Yugang; Li, Guohua; Zhu, Zhifeng; Wu, Chunyan; Wang, Li; Luo, Linbao; Jie, Jiansheng

    2012-12-07

    Nonvolatile resistive switching has been observed for the first time in CdSe nanowire (NW)/Au Schottky barrier diodes, where a Schottky contact electrode and an Ohmic contact electrode were formed at the Au/CdSe NW and CdSe NW/In interfaces, respectively. The CdSe NWs Schottky devices were found to possess multibit storage ability in an individual nanowire, and exhibited excellent memory characteristics, with a resistance on/off ratio exceeding four orders of magnitude, a long retention time of over 10(4) s and a lower operating voltage of 2 V. By replacing the SiO(2)/Si substrate with a poly ethylene terephthalate substrate, flexible and transparent memory devices with superior stability under strain were realized. The resistive switching of CdSe NW/Au Schottky devices is understood by electron trapping and detrapping in the interfacial oxide layer. Our findings provide a viable way to create new functional high-density nonvolatile multibit memory devices compatible with simple processing techniques for normal one-dimensional nanomaterials.

  6. Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires

    NASA Astrophysics Data System (ADS)

    Wu, Di; Jiang, Yang; Yu, Yongqiang; Zhang, Yugang; Li, Guohua; Zhu, Zhifeng; Wu, Chunyan; Wang, Li; Luo, Linbao; Jie, Jiansheng

    2012-12-01

    Nonvolatile resistive switching has been observed for the first time in CdSe nanowire (NW)/Au Schottky barrier diodes, where a Schottky contact electrode and an Ohmic contact electrode were formed at the Au/CdSe NW and CdSe NW/In interfaces, respectively. The CdSe NWs Schottky devices were found to possess multibit storage ability in an individual nanowire, and exhibited excellent memory characteristics, with a resistance on/off ratio exceeding four orders of magnitude, a long retention time of over 104 s and a lower operating voltage of 2 V. By replacing the SiO2/Si substrate with a poly ethylene terephthalate substrate, flexible and transparent memory devices with superior stability under strain were realized. The resistive switching of CdSe NW/Au Schottky devices is understood by electron trapping and detrapping in the interfacial oxide layer. Our findings provide a viable way to create new functional high-density nonvolatile multibit memory devices compatible with simple processing techniques for normal one-dimensional nanomaterials.

  7. Epitaxial integration of tetragonal BiFeO3 with silicon for nonvolatile memory applications

    NASA Astrophysics Data System (ADS)

    Zhu, Jingbin; Yin, Zhigang; Fu, Zhen; Zhao, Yajuan; Zhang, Xingwang; Liu, Xin; You, Jingbi; Li, Xingxing; Meng, Junhua; Liu, Heng; Wu, Jinliang

    2017-02-01

    Ferroelectric field-effect transistor has long been considered as a promising nonvolatile memory technology, but its application is limited by the poor scalability. Here we show that this problem can be solved by epitaxially integrating tetragonal BiFeO3, a stress-induced metastable phase which exhibits remarkably low dielectric permittivity and high coercive field, on the silicon platform. Tetragonal BiFeO3 was stabilized on (001)-oriented silicon by using Bi2SiO5, which is chemically and structurally compatible with both silicon and tetragonal BiFeO3, as the buffer layer. Unlike the commonly observed MC structure, the obtained BiFeO3 layer exhibits a true tetragonal symmetry. An unprecedented high memory window of 6.5 V was observed for the Au/BiFeO3/Bi2SiO5/Si capacitor with BiFeO3 thickness of 135 nm. The epitaxial integration of tetragonal BiFeO3 with silicon may pave a possible avenue for nanosized, power-efficient ferroelectric nonvolatile memories.

  8. Characteristics of a Nonvolatile SRAM Memory Cell Utilizing a Ferroelectric Transistor

    NASA Technical Reports Server (NTRS)

    Mitchell, Cody; Laws, Crystal; MacLeod, Todd C.; Ho, Fat D.

    2011-01-01

    The SRAM cell circuit is a standard for volatile data storage. When utilizing one or more ferroelectric transistors, the hysteresis characteristics give unique properties to the SRAM circuit, providing for investigation into the development of a nonvolatile memory cell. This paper discusses various formations of the SRAM circuit, using ferroelectric transistors, n-channel and p-channel MOSFETs, and resistive loads. With varied source and supply voltages, the effects on the timing and retention characteristics are investigated, including retention times of up to 24 hours.

  9. Numerical model of a single nanocrystal devoted to the study of disordered nanocrystal floating gates of new flash memories

    NASA Astrophysics Data System (ADS)

    Leroy, Yann; Armeanu, Dumitru; Cordan, Anne-Sophie

    2011-05-01

    The improvement of our model concerning a single nanocrystal that belongs to a nanocrystal floating gate of a flash memory is presented. In order to extend the gate voltage range applicability of the model, the 3D continuum of states of either metallic or semiconducting electrodes is discretized into 2D subbands. Such an approach gives precise information about the mechanisms behind the charging or release processes of the nanocrystal. Then, the self-energy and screening effects of an electron within the nanocrystal are evaluated and introduced in the model. This enables a better determination of the operating point of the nanocrystal memory. The impact of those improvements on the charging or release time of the nanocrystal is discussed.

  10. Quantitative Analysis of Charge Injection and Discharging of Si Nanocrystals and Arrays by Electrostatic Force Microscopy

    NASA Technical Reports Server (NTRS)

    Bell, L. D.; Boer, E.; Ostraat, M.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.

    2000-01-01

    NASA requirements for computing and memory for microspacecraft emphasize high density, low power, small size, and radiation hardness. The distributed nature of storage elements in nanocrystal floating-gate memories leads to intrinsic fault tolerance and radiation hardness. Conventional floating-gate non-volatile memories are more susceptible to radiation damage. Nanocrystal-based memories also offer the possibility of faster, lower power operation. In the pursuit of filling these requirements, the following tasks have been accomplished: (1) Si nanocrystal charging has been accomplished with conducting-tip AFM; (2) Both individual nanocrystals on an oxide surface and nanocrystals formed by implantation have been charged; (3) Discharging is consistent with tunneling through a field-lowered oxide barrier; (4) Modeling of the response of the AFM to trapped charge has allowed estimation of the quantity of trapped charge; and (5) Initial attempts to fabricate competitive nanocrystal non-volatile memories have been extremely successful.

  11. Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage.

    PubMed

    Han, Su-Ting; Zhou, Ye; Chen, Bo; Wang, Chundong; Zhou, Li; Yan, Yan; Zhuang, Jiaqing; Sun, Qijun; Zhang, Hua; Roy, V A L

    2016-01-20

    Here, a single-device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch gate for field effect transistor (FET) on a flexible substrate. A high performance flexible RRAM with a three-layered structure is fabricated by utilizing solution-processed MoS2 nanosheets sandwiched between poly(methyl methacrylate) polymer layers. Gate coupling with the pentacene-based transistor can be controlled by the RRAM memory state to produce a nonprogrammed state (inactive) and a programmed state (active) with a well-defined memory window. Compared to the reference flash memory device based on the MoS2 floating gate, the hybrid device presents robust access speed and retention ability. Furthermore, the hybrid RRAM-gated FET is used to build an integrated logic circuit and a wide logic window in inverter logic is achieved. The controllable, well-defined memory window, long retention time, and fast access speed of this novel hybrid device may open up new possibilities of realizing fully functional nonvolatile memory for high-performance flexible electronics.

  12. Design of hybrid spintronic devices at scaled technologies for non-volatile memory applications

    NASA Astrophysics Data System (ADS)

    Mojumder, Niladri Narayan

    The ever-increasing demand for embedding more on- and off-chip memories to increase the bandwidth of high performance systems has led to a significant amount of research directed towards several potential high density memory technologies. With aggressive technology scaling, the researchers are incessantly confronted with various overwhelming challenges associated with the design of low power, ultra-high density and robust memory blocks. An alternative to all currently available memory technologies, spin-transfer torque (STT) Magnetic Random Access Memories (MRAM) offer many desirable memory-attributes. Data non-volatility, unlimited endurance, low power, high performance and high integration capabilities have stimulated an overwhelming interest for STT-MRAM among memory researchers. In an attempt to address the issues associated with parametric process variations and high switching energy consumptions, different genres of magnetic tunnel junction (MTJ) structures, memory bit-cells, and architecture are proposed. Unlike state-of-the-art tri-layer MTJ devices, the multi-port/multi-pillar structures provide the option to eliminate the self-conflicting design requirements for memory read, write and hold. Techniques to reduce thermal fluctuation induced delay spreads is discussed for reliable and deterministic magnetic switching characteristics in both in-plane and perpendicular anisotropy devices. The effect of thermal spin-transfer torque on high speed magnetic switching is discussed in the context of designing low power, robust, and reliable MRAM devices. Based on thermally initiated magnonic spin-transfer torque, we propose three new genres of multi-port MRAMs for low energy, high speed, and reliable magnetic switching. The proposition of several new genres of magnetic tunnel junctions (MTJ) based on both electric and thermal spin-transfer torque, the corresponding bit-cells, and memory architectures make STT-MRAM a promising choice as future universal memories.

  13. Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal-Oxide-Semiconductor Devices Using II-VI Tunnel Insulators

    NASA Astrophysics Data System (ADS)

    Chan, P.-Y.; Gogna, M.; Suarez, E.; Karmakar, S.; Al-Amoody, F.; Miller, B. I.; Jain, F. C.

    2011-08-01

    This paper reports the successful use of ZnSe/ZnS/ZnMgS/ZnS/ZnSe as a gate insulator stack for an InGaAs-based metal-oxide-semiconductor (MOS) device, and demonstrates the threshold voltage shift required in nonvolatile memory devices using a floating gate quantum dot layer. An InGaAs-based nonvolatile memory MOS device was fabricated using a high- κ II-VI tunnel insulator stack and self-assembled GeO x -cladded Ge quantum dots as the charge storage units. A Si3N4 layer was used as the control gate insulator. Capacitance-voltage data showed that, after applying a positive voltage to the gate of a MOS device, charges were being stored in the quantum dots. This was shown by the shift in the flat-band/threshold voltage, simulating the write process of a nonvolatile memory device.

  14. Non-volatile memory devices with redox-active diruthenium molecular compound

    NASA Astrophysics Data System (ADS)

    Pookpanratana, S.; Zhu, H.; Bittle, E. G.; Natoli, S. N.; Ren, T.; Richter, C. A.; Li, Q.; Hacker, C. A.

    2016-03-01

    Reduction-oxidation (redox) active molecules hold potential for memory devices due to their many unique properties. We report the use of a novel diruthenium-based redox molecule incorporated into a non-volatile Flash-based memory device architecture. The memory capacitor device structure consists of a Pd/Al2O3/molecule/SiO2/Si structure. The bulky ruthenium redox molecule is attached to the surface by using a ‘click’ reaction and the monolayer structure is characterized by x-ray photoelectron spectroscopy to verify the Ru attachment and molecular density. The ‘click’ reaction is particularly advantageous for memory applications because of (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. Ultraviolet photoelectron spectroscopy data identified the energy of the electronic levels of the surface before and after surface modification. The molecular memory devices display an unsaturated charge storage window attributed to the intrinsic properties of the redox-active molecule. Our findings demonstrate the strengths and challenges with integrating molecular layers within solid-state devices, which will influence the future design of molecular memory devices.

  15. Opportunities for nonvolatile memory systems in extreme-scale high-performance computing

    DOE PAGES

    Vetter, Jeffrey S.; Mittal, Sparsh

    2015-01-12

    For extreme-scale high-performance computing systems, system-wide power consumption has been identified as one of the key constraints moving forward, where DRAM main memory systems account for about 30 to 50 percent of a node's overall power consumption. As the benefits of device scaling for DRAM memory slow, it will become increasingly difficult to keep memory capacities balanced with increasing computational rates offered by next-generation processors. However, several emerging memory technologies related to nonvolatile memory (NVM) devices are being investigated as an alternative for DRAM. Moving forward, NVM devices could offer solutions for HPC architectures. Researchers are investigating how to integratemore » these emerging technologies into future extreme-scale HPC systems and how to expose these capabilities in the software stack and applications. In addition, current results show several of these strategies could offer high-bandwidth I/O, larger main memory capacities, persistent data structures, and new approaches for application resilience and output postprocessing, such as transaction-based incremental checkpointing and in situ visualization, respectively.« less

  16. Opportunities for nonvolatile memory systems in extreme-scale high-performance computing

    SciTech Connect

    Vetter, Jeffrey S.; Mittal, Sparsh

    2015-01-12

    For extreme-scale high-performance computing systems, system-wide power consumption has been identified as one of the key constraints moving forward, where DRAM main memory systems account for about 30 to 50 percent of a node's overall power consumption. As the benefits of device scaling for DRAM memory slow, it will become increasingly difficult to keep memory capacities balanced with increasing computational rates offered by next-generation processors. However, several emerging memory technologies related to nonvolatile memory (NVM) devices are being investigated as an alternative for DRAM. Moving forward, NVM devices could offer solutions for HPC architectures. Researchers are investigating how to integrate these emerging technologies into future extreme-scale HPC systems and how to expose these capabilities in the software stack and applications. In addition, current results show several of these strategies could offer high-bandwidth I/O, larger main memory capacities, persistent data structures, and new approaches for application resilience and output postprocessing, such as transaction-based incremental checkpointing and in situ visualization, respectively.

  17. Non-volatile Memory Devices with Redox-active Diruthenium Molecular Compound

    PubMed Central

    Pookpanratana, S.; Zhu, H.; Bittle, E. G.; Natoli, S. N.; Ren, T.; Richter, C. A; Li, Q.; Hacker, C. A.

    2016-01-01

    Reduction-oxidation (redox) active molecules hold potential for memory devices due to their many unique properties. We report the use of a novel diruthenium-based redox molecule incorporated into a non-volatile Flash-based memory device architecture. The memory capacitor device structure consists of a Pd/Al2O3/molecule/SiO2/Si structure. The bulky ruthenium redox molecule is attached to the surface by using a “click” reaction and the monolayer structure is characterized by X-ray photoelectron spectroscopy to verify the Ru attachment and molecular density. The “click” reaction is particularly advantageous for memory applications because of (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. Ultraviolet photoelectron spectroscopy data identified the energy of the electronic levels of the surface before and after surface modification. The molecular memory devices display an unsaturated charge storage window attributed to the intrinsic properties of the redox-active molecule. Our findings demonstrate the strengths and challenges with integrating molecular layers within solid-state devices, which will influence the future design of molecular memory devices. PMID:26871549

  18. Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories

    NASA Astrophysics Data System (ADS)

    Wang, Shun; Gao, Xu; Zhong, Ya-Nan; Zhang, Zhong-Da; Xu, Jian-Long; Wang, Sui-Dong

    2016-07-01

    High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio and good memory retention.

  19. Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory.

    PubMed

    Yang, Yiming; Peng, Xingyue; Kim, Hong-Seok; Kim, Taeho; Jeon, Sanghun; Kang, Hang Kyu; Choi, Wonjun; Song, Jindong; Doh, Yong-Joo; Yu, Dong

    2015-09-09

    We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10(5). The origin of NPC is attributed to the depletion of conduction channels by light assisted hot electron trapping, supported by gate voltage threshold shift and wavelength-dependent photoconductance measurements. Scanning photocurrent microscopy excludes the possibility that NPC originates from the NW/metal contacts and reveals a competing positive photoconductivity. The conductivity recovery after illumination substantially slows down at low temperature, indicating a thermally activated detrapping mechanism. At 78 K, the spontaneous recovery of the conductance is completely quenched, resulting in a reversible memory device, which can be switched by light and gate voltage pulses. The novel NPC based optoelectronics may find exciting applications in photodetection and nonvolatile memory with low power consumption.

  20. Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations.

    PubMed

    Kim, Woo Young; Kim, Hyeon-Don; Kim, Teun-Teun; Park, Hyun-Sung; Lee, Kanghee; Choi, Hyun Joo; Lee, Seung Hoon; Son, Jaehyeon; Park, Namkyoo; Min, Bumki

    2016-01-27

    Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.

  1. Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

    NASA Astrophysics Data System (ADS)

    Kim, Woo Young; Kim, Hyeon-Don; Kim, Teun-Teun; Park, Hyun-Sung; Lee, Kanghee; Choi, Hyun Joo; Lee, Seung Hoon; Son, Jaehyeon; Park, Namkyoo; Min, Bumki

    2016-01-01

    Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.

  2. Graphene–ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

    PubMed Central

    Kim, Woo Young; Kim, Hyeon-Don; Kim, Teun-Teun; Park, Hyun-Sung; Lee, Kanghee; Choi, Hyun Joo; Lee, Seung Hoon; Son, Jaehyeon; Park, Namkyoo; Min, Bumki

    2016-01-01

    Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer. PMID:26813710

  3. Quasi-unipolar pentacene films embedded with fullerene for non-volatile organic transistor memories

    SciTech Connect

    Lee, Juhee; Lee, Sungpyo; Lee, Moo Hyung; Kang, Moon Sung

    2015-02-09

    Quasi-unipolar non-volatile organic transistor memory (NOTM) can combine the best characteristics of conventional unipolar and ambipolar NOTMs and, as a result, exhibit improved device performance. Unipolar NOTMs typically exhibit a large signal ratio between the programmed and erased current signals but also require a large voltage to program and erase the memory cells. Meanwhile, an ambipolar NOTM can be programmed and erased at lower voltages, but the resulting signal ratio is small. By embedding a discontinuous n-type fullerene layer within a p-type pentacene film, quasi-unipolar NOTMs are fabricated, of which the signal storage utilizes both electrons and holes while the electrical signal relies on only hole conduction. These devices exhibit superior memory performance relative to both pristine unipolar pentacene devices and ambipolar fullerene/pentacene bilayer devices. The quasi-unipolar NOTM exhibited a larger signal ratio between the programmed and erased states while also reducing the voltage required to program and erase a memory cell. This simple approach should be readily applicable for various combinations of advanced organic semiconductors that have been recently developed and thereby should make a significant impact on organic memory research.

  4. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    NASA Astrophysics Data System (ADS)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  5. Nonvolatile memory with graphene oxide as a charge storage node in nanowire field-effect transistors

    NASA Astrophysics Data System (ADS)

    Baek, David J.; Seol, Myeong-Lok; Choi, Sung-Jin; Moon, Dong-Il; Choi, Yang-Kyu

    2012-02-01

    Through the structural modification of a three-dimensional silicon nanowire field-effect transistor, i.e., a double-gate FinFET, a structural platform was developed which allowed for us to utilize graphene oxide (GO) as a charge trapping layer in a nonvolatile memory device. By creating a nanogap between the gate and the channel, GO was embedded after the complete device fabrication. By applying a proper gate voltage, charge trapping, and de-trapping within the GO was enabled and resulted in large threshold voltage shifts. The employment of GO with FinFET in our work suggests that graphitic materials can potentially play a significant role for future nanoelectronic applications.

  6. Observation of nonvolatile resistive memory switching characteristics in Ag/graphene-oxide/Ag devices.

    PubMed

    Venugopal, Gunasekaran; Kim, Sang-Jae

    2012-11-01

    In this paper, we report highly stable and bipolar resistive switching effects of Ag/Graphene oxide thinfilm/Ag devices. The graphene-oxide (GO) thinfilms were prepared on Ag/SiO2/Si substrates by spin-coating technique. The Ag/GO/Ag devices showed a steady and bipolar resistive switching characteristic. The resistance switching from low resistance state (LRS) and high resistance state (HRS) with the resistance ratio of HRS to LRS of about 10 which was attained at a voltage bias of 0.1 V. Based on the filamentary conduction model, the dominant conduction mechanism of switching effect was well explained. Our results show GO can be a promising candidate for future development of nonvolatile memory devices.

  7. The floating-gate non-volatile semiconductor memory--from invention to the digital age.

    PubMed

    Sze, S M

    2012-10-01

    In the past 45 years (from 1967 to 2012), the non-volatile semiconductor memory (NVSM) has emerged from a floating-gate concept to the prime technology driver of the largest industry in the world-the electronics industry. In this paper, we briefly review the historical development of NVSM and project its future trends to the year 2020. In addition, we consider NVSM's wide-range of applications from the digital cellular phone to tablet computer to digital television. As the device dimension is scaled down to the deca-nanometer regime, we expect that many innovations will be made to meet the scaling challenges, and NVSM-inspired technology will continue to enrich and improve our lives for decades to come.

  8. A Compute Capable SSD Architecture for Next-Generation Non-volatile Memories

    SciTech Connect

    De, Arup

    2014-01-01

    Existing storage technologies (e.g., disks and ash) are failing to cope with the processor and main memory speed and are limiting the overall perfor- mance of many large scale I/O or data-intensive applications. Emerging fast byte-addressable non-volatile memory (NVM) technologies, such as phase-change memory (PCM), spin-transfer torque memory (STTM) and memristor are very promising and are approaching DRAM-like performance with lower power con- sumption and higher density as process technology scales. These new memories are narrowing down the performance gap between the storage and the main mem- ory and are putting forward challenging problems on existing SSD architecture, I/O interface (e.g, SATA, PCIe) and software. This dissertation addresses those challenges and presents a novel SSD architecture called XSSD. XSSD o oads com- putation in storage to exploit fast NVMs and reduce the redundant data tra c across the I/O bus. XSSD o ers a exible RPC-based programming framework that developers can use for application development on SSD without dealing with the complication of the underlying architecture and communication management. We have built a prototype of XSSD on the BEE3 FPGA prototyping system. We implement various data-intensive applications and achieve speedup and energy ef- ciency of 1.5-8.9 and 1.7-10.27 respectively. This dissertation also compares XSSD with previous work on intelligent storage and intelligent memory. The existing ecosystem and these new enabling technologies make this system more viable than earlier ones.

  9. Biomolecule nanoparticle-induced nanocomposites with resistive switching nonvolatile memory properties

    NASA Astrophysics Data System (ADS)

    Ko, Yongmin; Ryu, Sook Won; Cho, Jinhan

    2016-04-01

    Resistive switching behavior-based memory devices are considered promising candidates for next-generation data storage because of their simple structure configuration, low power consumption, and rapid operating speed. Here, the resistive switching nonvolatile memory properties of Fe2O3 nanocomposite (NC) films prepared from the thermal calcination of layer-by-layer (LbL) assembled ferritin multilayers were successfully investigated. For this study, negatively charged ferritin nanoparticles were alternately deposited onto the Pt-coated Si substrate with positively charged poly(allylamine hydrochloride) (PAH) by solution-based electrostatic LbL assembly, and the formed multilayers were thermally calcinated to obtain a homogeneous transition metal oxide NC film through the elimination of organic components, including the protein shell of ferritin. The formed memory device exhibits a stable ON/OFF current ratio of approximately 103, with nanosecond switching times under an applied external bias. In addition, these reversible switching properties were kept stable during the repeated cycling tests of above 200 cycles and a test period of approximately 105 s under atmosphere. These solution-based approaches can provide a basis for large-area inorganic nanoparticle-based electric devices through the design of bio-nanomaterials at the molecular level.

  10. Nonvolatile Transistor Memory with Self-Assembled Semiconducting Polymer Nanodomain Floating Gates.

    PubMed

    Wang, Wei; Kim, Kang Lib; Cho, Suk Man; Lee, Ju Han; Park, Cheolmin

    2016-12-14

    Organic field effect transistor based nonvolatile memory (OFET-NVM) with semiconducting nanofloating gates offers additional benefits over OFET-NVMs with conventional metallic floating gates due to the facile controllability of charge storage based on the energetic structure of the floating gate. In particular, an all-in-one tunneling and floating-gate layer in which the semiconducting polymer nanodomains are self-assembled in the dielectric tunneling layer is promising. In this study, we utilize crystals of a p-type semiconducting polymer in which the crystalline lamellae of the polymer are spontaneously developed and embedded in the tunneling matrix as the nanofloating gate. The widths and lengths of the polymer nanodomains are approximately 20 nm and a few hundred nanometers, respectively. An OFET-NVM containing the crystalline nanofloating gates exhibits memory performance with a large memory window of 10 V, programming/erasing switching endurance for over 500 cycles, and a long retention time of 5000 s. Moreover, the device performance is improved by comixing with an n-type semiconductor; thus, the solution-processed p- and n-type double floating gates capable of storing both holes and electrons allow for the multilevel operation of our OFET-NVM. Four highly reliable levels (two bits per cell) of charge trapping and detrapping are achieved using this OFET-NVM by accurately choosing the programming/erasing voltages.

  11. Properties of Dopants in HfOx for Improving the Performance of Nonvolatile Memory

    NASA Astrophysics Data System (ADS)

    Duncan, Dan; Magyari-Köpe, Blanka; Nishi, Yoshio

    2017-03-01

    Doping is an increasingly popular technique for improving the characteristics of cutting-edge HfOx nonvolatile memory devices, but relatively few dopant species have been investigated. In this work, the properties of 50 different cation and anion dopants in HfOx are explored using density-functional theory and are corroborated with experimental data. Depending on the atomic species, dopants are found to preferentially form on either substitutional or interstitial lattice sites and to reduce the formation energy of oxygen vacancies in the surrounding oxide. The behavior of cation dopants in HfOx is also found to be well predicted by six properties: dopant valence, atomic radius, native-oxide enthalpy of formation, coordination number, magnetization, and charge transfer with the HfOx lattice. These results can be used to optimize dopant selection for tuning of the switching characteristics of HfOx -based resistance-change random-access-memory and conductive-bridge random-access-memory devices.

  12. Memory characteristics of Co nanocrystal memory device with HfO2 as blocking oxide

    NASA Astrophysics Data System (ADS)

    Yang, F. M.; Chang, T. C.; Liu, P. T.; Yeh, P. H.; Yu, Y. C.; Lin, J. Y.; Sze, S. M.; Lou, J. C.

    2007-03-01

    In this letter, the Co nanocrystals using SiO2 and HfO2 as the tunneling and the control dielectric with memory effect has been fabricated. A significant memory effect was observed through the electrical measurements. Under the low voltage operation of 5V, the memory window was estimated to ˜1V. The retention characteristics were tested to be robust. Also, the endurance of the memory device was not degraded up to 106 write/erase cycles. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.

  13. SiNx Charge Trap Nonvolatile Memory Based on ZnO Thin Film Transistor Prepared by Atomic Layer Deposition

    NASA Astrophysics Data System (ADS)

    Kim, E.; Lee, K.; Kim, D.; Parsons, G. N.; Park, K.

    2011-12-01

    We fabricated a nonvolatile thin film transistor (TFT) memory with SiNx charge traps using a ZnO thin film as an active channel layer. The thin film of ZnO was deposited by using atomic layer deposition process at TALD = 125 °C. The ZnO films were investigated by X-ray diffraction and X-ray photoemission measurements. The electrical measurements of the nonvolatile TFT memory showed a field-effect mobility of 2.95 cm2 V-1 s-1, a threshold voltage of -7.24 V, a subthreshold swing of 1.7 V/dec, and an on/off ratio of 3.4×105. From the C-V measurement, the memory window of 2 V was obtained.

  14. Enhancement of programming speed on gate-all-around poly-silicon nanowire nonvolatile memory using self-aligned NiSi Schottky barrier source/drain

    NASA Astrophysics Data System (ADS)

    Ho, Ching-Yuan; Chang, Yaw-Jen; Chiou, Y. L.

    2013-08-01

    The programming characteristics of gate-all-around silicon-oxide-nitride-oxide silicon (SONOS) nonvolatile memories are presented using NiSi/poly-Si nanowires (SiNW) Schottky barrier (SB) heterojunctions. The non-uniform thermal stress distribution on SiNW channels due to joule heating affected the carrier transport behavior. Under a high drain voltage, impact ionization was found as a large lateral field enhances carrier velocity. As gate voltage (Vg) increased, the difference in the drain current within a range of various temperature conditions can be mitigated because a high gate field lowers the SB height of a NiSi source/SiNW/NiSi drain junction to ensure efficient hot-carrier generation. By applying the Fowler-Nordheim programming voltage to the SONOS nanowire memory, the SB height (Φn = 0.34 eV) could be reduced by image force; thus, hot electrons could be injected from SB source/drain electrodes into the SiN storage node. To compare both SiNW and Si nanocrystal SONOS devices, the SB SiNW SONOS device was characterized experimentally to propose a wider threshold-voltage window, exhibiting efficient programming characteristics.

  15. Reconfigurable magnetic logic combined with non-volatile memory in silicon

    NASA Astrophysics Data System (ADS)

    Luo, Zhaochu; Zhang, Xiaozhong

    Silicon-based complementary metal-oxide-semiconductor (CMOS) transistors have achieved great success and become the mainstream of integrated logic circuits. However, the traditional pathway to enhance computational performance and decrease cost by continuous miniaturization is approaching its fundamental limits. The recent emergence of magnetic logic devices, especially magnetic-field-based semiconductor logic devices, shows promise for surpassing the development limits of CMOS logic and arouses profound attentions. Based on our Si based magnetoresistance (MR) device, we proposed a Si based reconfigurable magnetic logic device by coupling nonlinear transport effect and Hall effect in Si, which could do all four basic Boolean logic operations including AND, OR, NOR and NAND combined with non-volatile memory. Further, we developed a Si based current-mode magnetic logic device, which allowed direct communication between different logic devices by current-induced magnetization switch effect without external intermediate magnetic-electric converters. This may result in a memory-logic integrated system leading to a non von Neumann computer.

  16. Development and characterization of a ferroelectric non-volatile memory for flexible electronics

    NASA Astrophysics Data System (ADS)

    Mao, Duo

    Flexible electronics have received significant attention recently because of the potential applications in displays, sensors, radio frequency identification (RFID) tags and other integrated circuits. Electrically addressable non-volatile memory is a key component for these applications. The major challenges are to fabricate the memory at a low temperature compatible with plastic substrates while maintaining good device reliability, by being compatible with process as needed to integrate with other electronic components for system-on-chip applications. In this work, ferroelectric capacitors fabricated at low temperature were developed. Based on that, a ferroelectric random access memory (FRAM) for flexible electronics was developed and characterized. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] copolymer was used as a ferroelectric material and a photolithographic process was developed to fabricate ferroelectric capacitors. Different characterization methods including atomic force microscopy, x-ray diffraction and Fourier-transform infrared reflection-absorption spectroscopy were used to study the material properties of the P(VDF-TrFE) film. The material properties were correlated with the electrical characteristics of the ferroelectric capacitors. To understand the polarization switching behavior of the P(VDF-TrFE) ferroelectric capacitors, a Nucleation-Limited-Switching (NLS) model was used to study the switching kinetics. The switching kinetics were characterized over the temperature range from -60 °C to 100 °C. Fatigue characteristics were studied at different electrical stress voltages and frequencies to evaluate the reliability of the ferroelectric capacitor. The degradation mechanism is attributed to the increase of the activation field and the suppression of the switchable polarization. To develop a FRAM circuit for flexible electronics, an n-channel thin film transistor (TFT) based on CdS as the semiconductor was integrated with a P

  17. High-performance nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polymethylmethacrylate

    NASA Astrophysics Data System (ADS)

    Thanh Dao, Toan; Viet Tran, Thu; Higashimine, Koichi; Okada, Hiromasa; Mott, Derrick; Maenosono, Shinya; Murata, Hideyuki

    2011-12-01

    A mixture of ZnO nanoparticles and polymethylmethacrylate was used as an active layer in a nonvolatile resistive memory device. Current-voltage characteristics of the device showed nonvolatile write-once-read-many-times memory behavior with a switching time on the order of μs. The device exhibited an on/off ratio of 104, retention time of >105 s, and number of readout of >4 × 104 times under a read voltage of 0.5 V. The emission, cross-sectional high-resolution transmission electron microscopy (TEM), scanning TEM-high angle annular dark field imaging, and energy dispersive x-ray spectroscopy elemental mapping measurements suggest that the electrical switching originates from the formation of conduction paths.

  18. A nonvolatile memory device made of a ferroelectric polymer gate nanodot and a single-walled carbon nanotube.

    PubMed

    Son, Jong Yeog; Ryu, Sangwoo; Park, Yoon-Cheol; Lim, Yun-Tak; Shin, Yun-Sok; Shin, Young-Han; Jang, Hyun Myung

    2010-12-28

    We demonstrate a field-effect nonvolatile memory device made of a ferroelectric copolymer gate nanodot and a single-walled carbon nanotube (SW-CNT). A position-controlled dip-pen nanolithography was performed to deposit a poly(vinylidene fluoride-ran-trifluoroethylene) (PVDF-TrFE) nanodot onto the SW-CNT channel with both a source and drain for field-effect transistor (FET) function. PVDF-TrFE was chosen as a gate dielectric nanodot in order to efficiently exploit its bipolar chemical nature. A piezoelectric force microscopy study confirmed the canonical ferroelectric responses of the PVDF-TrFE nanodot fabricated at the center of the SW-CNT channel. The two distinct ferroelectric polarization states with the stable current retention and fatigue-resistant characteristics make the present PVDF-TrFE-based FET suitable for nonvolatile memory applications.

  19. Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon

    SciTech Connect

    Bory, Benjamin F.; Meskers, Stefan C. J.; Rocha, Paulo R. F.; Gomes, Henrique L.; Leeuw, Dago M. de

    2015-11-28

    Diodes incorporating a bilayer of an organic semiconductor and a wide bandgap metal oxide can show unipolar, non-volatile memory behavior after electroforming. The prolonged bias voltage stress induces defects in the metal oxide with an areal density exceeding 10{sup 17 }m{sup −2}. We explain the electrical bistability by the coexistence of two thermodynamically stable phases at the interface between an organic semiconductor and metal oxide. One phase contains mainly ionized defects and has a low work function, while the other phase has mainly neutral defects and a high work function. In the diodes, domains of the phase with a low work function constitute current filaments. The phase composition and critical temperature are derived from a 2D Ising model as a function of chemical potential. The model predicts filamentary conduction exhibiting a negative differential resistance and nonvolatile memory behavior. The model is expected to be generally applicable to any bilayer system that shows unipolar resistive switching.

  20. Metal-oxide-semiconductor diodes containing C60 fullerenes for non-volatile memory applications

    NASA Astrophysics Data System (ADS)

    Beckmeier, Daniel; Baumgärtner, Hermann

    2013-01-01

    For non-volatile memories, silicon-oxide-nitride-oxide-silicon or floating gate structures are used to store information by charging and discharging electronic states reversibly. In this article, we propose to replace the floating gate by C60 molecules. This would allow more defined programming voltages because of the discrete molecular energy levels and a higher resistance to tunneling oxide defects because of the weak electrical connection between the single molecules. Such C60 MOS diode structures are produced and their electrical properties are analyzed regarding current transport and charging mechanism of the molecules. To create the MOS structures, C60 molecules (5% of a monolayer) are evaporated onto a part of a clean silicon wafer and covered by amorphous silicon in situ in an ultra high vacuum system. Then the wafer is oxidized in wet atmosphere at just 710 °C through the C60 layer. The goal is to produce a clean oxide above and under the molecules without destroying them. Aluminum gate contacts are defined on top of these layers to perform complementary capacitance voltage (CV) and current voltage (IV) measurements. First, the gate voltage is swept to analyze the injection current, then CV measurements are performed after each sweep to analyze the charge state of the C60 layer and the oxide quality. Reference diodes without C60 on the same wafer show an identical Fowler-Nordheim (FN) tunneling behavior for currents injected from silicon or from aluminum, respectively. In the CV curves, no pronounced flatband voltage shift is observable. In diodes with C60, for negative gate voltages, a classical FN tunneling is observed and compared to theory. The electron injection from silicon shows a different tunneling current behavior. It starts at a lower electric field and has a smaller slope then a FN current would have. It is identified as a trap-assisted tunneling (TAT) current caused by oxidation-induced traps under the C60 layer. It is modeled by an

  1. Electric field mediated non-volatile tuning magnetism in CoPt/PMN-PT heterostructure for magnetoelectric memory devices

    NASA Astrophysics Data System (ADS)

    Yang, Y. T.; Li, J.; Peng, X. L.; Wang, X. Q.; Wang, D. H.; Cao, Q. Q.; Du, Y. W.

    2016-02-01

    We report a power efficient non-volatile magnetoelectric memory in the CoPt/(011)PMN-PT heterostructure. Two reversible and stable electric field induced coercivity states (i.e., high-HC or low-HC) are obtained due to the strain mediated converse magnetoelectric effect. The reading process of the different coercive field information written by electric fields is demonstrated by using a magnetoresistance read head. This result shows good prospects in the application of novel multiferroic devices.

  2. Attachable and flexible aluminum oxide resistive non-volatile memory arrays fabricated on tape as the substrate

    NASA Astrophysics Data System (ADS)

    Lee, Woocheol; Jang, Jingon; Song, Younggul; Cho, Kyungjune; Yoo, Daekyoung; Kim, Youngrok; Chung, Seungjun; Lee, Takhee

    2017-03-01

    We fabricated 8 × 8 arrays of non-volatile resistive memory devices on commercially available Scotch® Magic™ tape as a flexible substrate. The memory devices consist of double active layers of Al2O3 with a structure of Au/Al2O3/Au/Al2O3/Al (50 nm/20 nm/20 nm/20 nm/50 nm) on attachable tape substrates. Because the memory devices were fabricated using only dry and low temperature processes, the tape substrate did not suffer from any physical or chemical damage during the fabrication. The fabricated memory devices were turned to the low resistance state at ∼3.5 V and turned to the high resistance state at ∼10 V with a negative differential resistance region after ∼5 V, showing typical unipolar non-volatile resistive memory behavior. The memory devices on the tape substrates exhibited reasonable electrical performances including a high ON/OFF ratio of 104, endurance over 200 cycles of reading/writing processes, and retention times of over 104 s in both the flat and bent configurations.

  3. Attachable and flexible aluminum oxide resistive non-volatile memory arrays fabricated on tape as the substrate.

    PubMed

    Lee, Woocheol; Jang, Jingon; Song, Younggul; Cho, Kyungjune; Yoo, Daekyoung; Kim, Youngrok; Chung, Seungjun; Lee, Takhee

    2017-03-01

    We fabricated 8 × 8 arrays of non-volatile resistive memory devices on commercially available Scotch(®) Magic(™) tape as a flexible substrate. The memory devices consist of double active layers of Al2O3 with a structure of Au/Al2O3/Au/Al2O3/Al (50 nm/20 nm/20 nm/20 nm/50 nm) on attachable tape substrates. Because the memory devices were fabricated using only dry and low temperature processes, the tape substrate did not suffer from any physical or chemical damage during the fabrication. The fabricated memory devices were turned to the low resistance state at ∼3.5 V and turned to the high resistance state at ∼10 V with a negative differential resistance region after ∼5 V, showing typical unipolar non-volatile resistive memory behavior. The memory devices on the tape substrates exhibited reasonable electrical performances including a high ON/OFF ratio of 10(4), endurance over 200 cycles of reading/writing processes, and retention times of over 10(4) s in both the flat and bent configurations.

  4. Four-state non-volatile memory in a multiferroic spin filter tunnel junction

    NASA Astrophysics Data System (ADS)

    Ruan, Jieji; Li, Chen; Yuan, Zhoushen; Wang, Peng; Li, Aidong; Wu, Di

    2016-12-01

    We report a spin filter type multiferroic tunnel junction with a ferromagnetic/ferroelectric bilayer barrier. Memory functions of a spin filter magnetic tunnel junction and a ferroelectric tunnel junction are combined in this single device, producing four non-volatile resistive states that can be read out in a non-destructive manner. This concept is demonstrated in a LaNiO3/Pr0.8Ca0.2MnO3/BaTiO3/La0.7Sr0.3MnO3 all-oxide tunnel junction. The ferromagnetic insulator Pr0.8Ca0.2MnO3 serves as the spin filter and the ferromagnetic metal La0.7Sr0.3MnO3 is the spin analyzer. The ferroelectric polarization reversal in the BaTiO3 barrier switches the tunneling barrier height to produce a tunneling electroresistance. The ferroelectric switching also modulates the spin polarization and the spin filtering efficiency in Pr0.8Ca0.2MnO3.

  5. Non-volatile, high density, high speed, Micromagnet-Hall effect Random Access Memory (MHRAM)

    NASA Technical Reports Server (NTRS)

    Wu, Jiin C.; Katti, Romney R.; Stadler, Henry L.

    1991-01-01

    The micromagnetic Hall effect random access memory (MHRAM) has the potential of replacing ROMs, EPROMs, EEPROMs, and SRAMs because of its ability to achieve non-volatility, radiation hardness, high density, and fast access times, simultaneously. Information is stored magnetically in small magnetic elements (micromagnets), allowing unlimited data retention time, unlimited numbers of rewrite cycles, and inherent radiation hardness and SEU immunity, making the MHRAM suitable for ground based as well as spaceflight applications. The MHRAM device design is not affected by areal property fluctuations in the micromagnet, so high operating margins and high yield can be achieved in large scale integrated circuit (IC) fabrication. The MHRAM has short access times (less than 100 nsec). Write access time is short because on-chip transistors are used to gate current quickly, and magnetization reversal in the micromagnet can occur in a matter of a few nanoseconds. Read access time is short because the high electron mobility sensor (InAs or InSb) produces a large signal voltage in response to the fringing magnetic field from the micromagnet. High storage density is achieved since a unit cell consists only of two transistors and one micromagnet Hall effect element. By comparison, a DRAM unit cell has one transistor and one capacitor, and a SRAM unit cell has six transistors.

  6. A facile synthesis of CH3NH3PbBr3 perovskite quantum dots and their application in flexible nonvolatile memory

    NASA Astrophysics Data System (ADS)

    Yang, Kaiyu; Li, Fushan; Veeramalai, Chandrasekar Perumal; Guo, Tailiang

    2017-02-01

    In this work, we present a simple and facile one step synthesis strategy to prepare CH3NH3PbBr3 perovskite quantum dots and apply them into the nonvolatile memory. Resistive switching phenomenon was observed in this perovskite quantum dots and polymer composite based memory device with the ON/OFF current ratio larger than 103 as well as good reproducibility and reliability. Flexible memory was also demonstrated, and a possible resistance switching mechanism was discussed. Our work paves a way for the application of organolead halide perovskite quantum dots in flexible and transparent nonvolatile memories.

  7. Nonvolatile “AND,” “OR,” and “NOT” Boolean logic gates based on phase-change memory

    SciTech Connect

    Li, Y.; Zhong, Y. P.; Deng, Y. F.; Zhou, Y. X.; Xu, L.; Miao, X. S.

    2013-12-21

    Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices.

  8. Blackcomb: Hardware-Software Co-design for Non-Volatile Memory in Exascale Systems

    SciTech Connect

    Schreiber, Robert

    2014-11-26

    Summary of technical results of Blackcomb Memory Devices We explored various different memory technologies (STTRAM, PCRAM, FeRAM, and ReRAM). The progress can be classified into three categories, below. Modeling and Tool Releases Various modeling tools have been developed over the last decade to help in the design of SRAM or DRAM-based memory hierarchies. To explore new design opportunities that NVM technologies can bring to the designers, we have developed similar high-level models for NVM, including PCRAMsim [Dong 2009], NVSim [Dong 2012], and NVMain [Poremba 2012]. NVSim is a circuit-level model for NVM performance, energy, and area estimation, which supports various NVM technologies, including STT-RAM, PCRAM, ReRAM, and legacy NAND Flash. NVSim is successfully validated against industrial NVM prototypes, and it is expected to help boost architecture-level NVM-related studies. On the other side, NVMain is a cycle accurate main memory simulator designed to simulate emerging nonvolatile memories at the architectural level. We have released these models as open source tools and provided contiguous support to them. We also proposed PS3-RAM, which is a fast, portable and scalable statistical STT-RAM reliability analysis model [Wen 2012]. Design Space Exploration and Optimization With the support of these models, we explore different device/circuit optimization techniques. For example, in [Niu 2012a] we studied the power reduction technique for the application of ECC scheme in ReRAM designs and proposed to use ECC code to relax the BER (Bit Error Rate) requirement of a single memory to improve the write energy consumption and latency for both 1T1R and cross-point ReRAM designs. In [Xu 2011], we proposed a methodology to design STT-RAM for different optimization goals such as read performance, write performance and write energy by leveraging the trade-off between write current and write time of MTJ. We also studied the tradeoffs in building a reliable crosspoint Re

  9. A Novel Non-Destructive Silicon-on-Insulator Nonvolatile Memory - LDRD 99-0750 Final Report

    SciTech Connect

    DRAPER,BRUCE L.; FLEETWOOD,D. M.; MEISENHEIMER,TIMOTHY L.; MURRAY,JAMES R.; SCHWANK,JAMES R.; SHANEYFELT,MARTY R.; SMITH,PAUL M.; VANHEUSDEN,KAREL J.; WARREN,WILLIAM L.

    1999-11-01

    Defects in silicon-on-insulator (SOI) buried oxides are normally considered deleterious to device operation. Similarly, exposing devices to hydrogen at elevated temperatures often can lead to radiation-induced charge buildup. However, in this work, we take advantage of as-processed defects in SOI buried oxides and moderate temperature hydrogen anneals to generate mobile protons in the buried oxide to form the basis of a ''protonic'' nonvolatile memory. Capacitors and fully-processed transistors were fabricated. SOI buried oxides are exposed to hydrogen at moderate temperatures using a variety of anneal conditions to optimize the density of mobile protons. A fast ramp cool down anneal was found to yield the maximum number of mobile protons. Unfortunately, we were unable to obtain uniform mobile proton concentrations across a wafer. Capacitors were irradiated to investigate the potential use of protonic memories for space and weapon applications. Irradiating under a negative top-gate bias or with no applied bias was observed to cause little degradation in the number of mobile protons. However, irradiating to a total dose of 100 krad(SiO{sub 2}) under a positive top-gate bias caused approximately a 100% reduction in the number of mobile protons. Cycling capacitors up to 10{sup 4} cycles had little effect on the switching characteristics. No change in the retention characteristics were observed for times up to 3 x 10{sup 4} s for capacitors stored unbiased at 200 C. These results show the proof-of-concept for a protonic nonvolatile memory. Two memory architectures are proposed for a protonic non-destructive, nonvolatile memory.

  10. Controllable switching ratio in quantum dot/metal-metal oxide nanostructure based non-volatile memory device

    NASA Astrophysics Data System (ADS)

    Kannan, V.; Rhee, J. K.

    2012-07-01

    In this paper, we report a facile quantum dot/In-InOx(nanostructure)/quantum dot/In based non-volatile resistive memory device. The solution processed tri-layer structure exhibited bipolar resistive switching with a ratio of 100 between the high-resistance state and low-resistance state. The memory device was stable and functional even after 100,000 cycles of operation and it exhibited good retention characteristics. The ON/OFF switching ratio could be controlled by choosing appropriate metal in the structure. Memory operating mechanism is discussed based on charge trapping in quantum dots with InOx acting as barrier. A comparative study of memory devices consisting of aluminum and titanium in place of indium is presented. The possible reason for the variation in ON/OFF ratio is discussed on the size of the nano-sized grains of the middle metal layer.

  11. A 2-bit/Cell Gate-All-Around Flash Memory of Self-Assembled Silicon Nanocrystals

    NASA Astrophysics Data System (ADS)

    Chen, Hung-Bin; Chang, Chun-Yen; Hung, Min-Feng; Tang, Zih-Yun; Cheng, Ya-Chi; Wu, Yung-Chun

    2013-02-01

    This work presents gate-all-around (GAA) polycrystalline silicon (poly-Si) nanowires (NWs) channel poly-Si/SiO2/Si3N4/SiO2/poly-Si (SONOS) nonvolatile memory (NVM) with a self-assembled Si nanocrystal (Si-NC) embedded charge trapping (CT) layer. Fabrication of the Si-NCs is simple and compatible with the current flash process. The 2-bit operations based on channel hot electrons injection for programming and channel hot holes injection for erasing are clearly achieved by the localized discrete trap. In the programming and erasing characteristics studies, the GAA structure can effectively reduce operation voltage and shorten pulse time. One-bit programming or erasing does not affect the other bit. In the high-temperature retention characteristics studies, the cell embedded with Si-NCs shows excellent electrons confinement vertically and laterally. With respect to endurance characteristics, the memory window does not undergo closure after 104 program/erase (P/E) cycle stress. The 2-bit operation for GAA Si-NCs NVM provides scalability, reliability and flexibility in three-dimensional (3D) high-density flash memory applications.

  12. A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

    SciTech Connect

    Jovanović, B. E-mail: lionel.torres@lirmm.fr; Brum, R. M.; Torres, L.

    2014-04-07

    After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

  13. Voltage-tolerant circuit design for fully CMOS-compatible differential multiple-time programmable nonvolatile memories

    NASA Astrophysics Data System (ADS)

    Wu, Chia-You; Lin, Hongchin; Chiu, Hou-Jen

    2017-04-01

    In this paper, a fully CMOS-compatible differential multiple-time programmable (DFMTP) nonvolatile memory (NVM) circuit, fabricated by the standard TSMC 0.18 µm CMOS process without violating the design and electrical rules, is proposed. Novel voltage-tolerant circuits were designed using the standard 3.3 and 1.8 V devices for the bit line (BL) and control gate (CG) drivers for ‑3 and 6 V program/erase operations, as well as the negative voltage isolation circuits for sense amplifiers. The DFMTP array with these voltage-tolerant control circuits was used and measured to confirm the correct program/erase/read operations.

  14. Electrical and memory properties of Si3N4 MIS structures with embedded Si nanocrystals.

    PubMed

    Horváth, Z J; Basa, P; Jászi, T; Pap, A E; Dobos, L; Pécz, B; Tóth, L; Szöllosi, P; Nagy, K

    2008-02-01

    Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control layer and different Si2O2 or Si3N4 tunnel layers. It was obtained that Si nanocrystals improve the charging behaviour of the MNOS structures. Memory window width of 1.3 V and 2.0 V were obtained for pulse amplitudes of +/-9 V and +/-10 V, 100 ms, respectively. The extrapolated memory window after 10 years is about 15% of its initial value.

  15. Investigating the bistability characteristics of GaN/AlN resonant tunneling diodes for ultrafast nonvolatile memory

    NASA Astrophysics Data System (ADS)

    Nagase, Masanori; Takahashi, Tokio; Shimizu, Mitsuaki

    2015-03-01

    The bistability characteristics of GaN/AlN resonant tunneling diodes (RTDs) grown on a sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) were investigated to better understand their physical origin and explore their use in nonvolatile memories. The bistability current-voltage (I-V) characteristics of GaN/AlN RTDs, which were due to intersubband transitions and electron accumulation in the quantum well, were clearly observed over a wide temperature range between 50 and 300 K. However, the I-V characteristics sometimes degraded at temperatures above 250 K. Complex staircase structures were observed in the voltage region showing a negative differential resistance in the I-V curve, and the forward current increased or decreased rapidly as the forward-bias voltage increased. Repeated measurements of the I-V characteristics over the wide temperature range between 50 and 300 K revealed that the bistability characteristics of GaN/AlN RTDs degraded owing to the leakage of electrons accumulating in the quantum well through a deep level in the AlN barrier associated with crystal defects such as dislocations and impurities. Therefore, reduction in crystal defect and impurity densities in the AlN barrier, and a careful design that considers deep levels are important for realizing realize ultrafast nonvolatile memories based on the bistability characteristics of GaN/AlN RTDs.

  16. DIFMOS - A floating-gate electrically erasable nonvolatile semiconductor memory technology. [Dual Injector Floating-gate MOS

    NASA Technical Reports Server (NTRS)

    Gosney, W. M.

    1977-01-01

    Electrically alterable read-only memories (EAROM's) or reprogrammable read-only memories (RPROM's) can be fabricated using a single-level metal-gate p-channel MOS technology with all conventional processing steps. Given the acronym DIFMOS for dual-injector floating-gate MOS, this technology utilizes the floating-gate technique for nonvolatile storage of data. Avalanche injection of hot electrons through gate oxide from a special injector diode in each bit is used to charge the floating gates. A second injector structure included in each bit permits discharge of the floating gate by avalanche injection of holes through gate oxide. The overall design of the DIFMOS bit is dictated by the physical considerations required for each of the avalanche injector types. The end result is a circuit technology which can provide fully decoded bit-erasable EAROM-type circuits using conventional manufacturing techniques.

  17. Charge-trap non-volatile memories fabricated by laser-enabled low-thermal budget processes

    NASA Astrophysics Data System (ADS)

    Huang, Wen-Hsien; Shieh, Jia-Min; Pan, Fu-Ming; Yang, Chih-Chao; Shen, Chang-Hong; Wang, Hsing-Hsiang; Hsieh, Tung-Ying; Wu, Ssu-Yu; Wu, Meng-Chyi

    2015-11-01

    We fabricated charge-trap non-volatile memories (NVMs) using low thermal budget processes, including laser-crystallization of poly-Si thin film, chemical vapor deposition deposition of a stacked memory layer, and far-infrared-laser dopant activation. The thin poly-Si channel has a low defect-density at the interface with the bulk, resulting in a steep subthreshold swing for the NVM transistors. The introduction of the stacked SiO2/AlOxNy tunnel layer and the SiNx charge-trap layer with a gradient bandgap leads to reliable retention and endurance at low voltage for the NVMs. The low thermal budget processes are desirable for the integration of the nano-scaled NVMs into system on panels.

  18. Lithography-Free Miniaturization of Resistive Nonvolatile Memory Devices to the 100 nm Scale by Glancing Angle Deposition.

    PubMed

    Ligorio, Giovanni; Nardi, Marco Vittorio; Koch, Norbert

    2017-02-08

    The scaling of nonvolatile memory (NVM) devices based on resistive filament switching to below a 100 nm(2) footprint area without employing cumbersome lithography is demonstrated. Nanocolumns of the organic semiconductor 4,4-bis[N-(1-naphthyl)-N-phenyl-amino]diphenyl (α-NPD) were grown by glancing angle deposition on a silver electrode. Individual NVM devices were electrically characterized by conductive atomic force microscopy with the tip of a conductive cantilever serving as second electrode. The resistive switching mechanism is unambiguously attributed to Ag filament formation between the electrodes. This sets the upper limit for the filament diameter to well below 100 nm. Full functionality of these NVM nanodevices is evidenced, revealing a potential memory density of >1 GB/cm(2) in appropriate architectures.

  19. Silicon dioxide embedded germanium nanocrystals grown using molecular beam epitaxy for floating gate memory devices.

    PubMed

    Das, S; Singha, R K; Das, K; Dhar, A; Ray, S K

    2009-09-01

    SiO2/Ge nanocrystals/SiO2 trilayer memory structure has been fabricated by oxidizing and subsequent annealing of self assembled SiGe nanoislands grown by molecular beam epitaxy. The optical and charge storage characteristics of trilayer structures have been studied through Raman spectroscopy and capacitance-voltage measurements, respectively. An anti-clockwise hysteresis in the C-V characteristics indicated the net electron trapping in the floating gate containing Ge nanocrystals. Frequency dependent measurements of device characteristics indicate that neither interface defects nor deep traps are dominant for the charging or discharging processes of nanocrystal floating gates.

  20. A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films

    NASA Technical Reports Server (NTRS)

    Liu, S. Q.; Wu, N. J.; Ignatiev, A.

    2001-01-01

    A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (< 4 V) and short duration (< 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.

  1. Scalable processes for fabricating non-volatile memory devices using self-assembled 2D arrays of gold nanoparticles as charge storage nodes.

    PubMed

    Muralidharan, Girish; Bhat, Navakanta; Santhanam, Venugopal

    2011-11-01

    We propose robust and scalable processes for the fabrication of floating gate devices using ordered arrays of 7 nm size gold nanoparticles as charge storage nodes. The proposed strategy can be readily adapted for fabricating next generation (sub-20 nm node) non-volatile memory devices.

  2. NVL-C: Static Analysis Techniques for Efficient, Correct Programming of Non-Volatile Main Memory Systems

    SciTech Connect

    Lee, Seyong; Vetter, Jeffrey S

    2016-01-01

    Computer architecture experts expect that non-volatile memory (NVM) hierarchies will play a more significant role in future systems including mobile, enterprise, and HPC architectures. With this expectation in mind, we present NVL-C: a novel programming system that facilitates the efficient and correct programming of NVM main memory systems. The NVL-C programming abstraction extends C with a small set of intuitive language features that target NVM main memory, and can be combined directly with traditional C memory model features for DRAM. We have designed these new features to enable compiler analyses and run-time checks that can improve performance and guard against a number of subtle programming errors, which, when left uncorrected, can corrupt NVM-stored data. Moreover, to enable recovery of data across application or system failures, these NVL-C features include a flexible directive for specifying NVM transactions. So that our implementation might be extended to other compiler front ends and languages, the majority of our compiler analyses are implemented in an extended version of LLVM's intermediate representation (LLVM IR). We evaluate NVL-C on a number of applications to show its flexibility, performance, and correctness.

  3. Tuning the Electrical Memory Behavior from Nonvolatile to Volatile in Functional Copolyimides Bearing Varied Fluorene and Pyrene Moieties

    NASA Astrophysics Data System (ADS)

    Jia, Nanfang; Qi, Shengli; Tian, Guofeng; Wang, Xiaodong; Wu, Dezhen

    2016-12-01

    For producing polymer based electronics with good memory behavior, a series of functional copolyimides were designed and synthesized in this work by copolymerizing 3,3',4,4'-diphenylsulfonetetracarboxylic dianhydride (DSDA) with (9,9'-bis(4-aminophenyl)fluorene) (BAPF) and N,N-bis(4-aminophenyl) aminopyrene (DAPAP) diamines. The synthesized copolyimides DSDA/(DAPAP/BAPF) were denoted as coPI-DAPAPx (x = 100, 50, 20, 10, 5, 1, 0), where x% represents the molar fraction of the DAPAP unit in the diamines. Characterization results indicate that the coPI-DAPAPx exhibits tunable electrical switching behaviors from write once read many times (WORM, nonvolatile, coPI-DAPAP100, coPI-DAPAP50, coPI-DAPAP20, coPI-DAPAP10) to the static random access memory (SRAM, volatile, coPI-DAPAP5, coPI-DAPAP1) with the variation of the DAPAP content. Optical and electrochemical characterization show gradually decreasing highest occupied molecular orbital levels and enlarged energy gap with the decrease of the DAPAP moiety, suggesting decreasing charge-transfer effect in the copolyimides, which can account for the observed WORM-SRAM memory conversion. Meanwhile, the charge transfer process was elucidated by quantum chemical calculation at B3LYP/6-31G(d) theory level. This work shows the effect of electron donor content on the memory behavior of polymer electronic materials.

  4. Effect of electrode material on characteristics of non-volatile resistive memory consisting of Ag2S nanoparticles

    NASA Astrophysics Data System (ADS)

    Jang, Jaewon

    2016-07-01

    In this study, Ag2S nanoparticles are synthesized and used as the active material for two-terminal resistance switching memory devices. Sintered Ag2S films are successfully crystallized on plastic substrates with synthesized Ag2S nanoparticles, after a relatively low-temperature sintering process (200 °C). After the sintering process, the crystallite size is increased from 6.8 nm to 80.3 nm. The high ratio of surface atoms to inner atoms of nanoparticles reduces the melting point temperature, deciding the sintering process temperature. In order to investigate the resistance switching characteristics, metal/Ag2S/metal structures are fabricated and tested. The effect of the electrode material on the non-volatile resistive memory characteristics is studied. The bottom electrochemically inert materials, such as Au and Pt, were critical for maintaining stable memory characteristics. By using Au and Pt inert bottom electrodes, we are able to significantly improve the memory endurance and retention to more than 103 cycles and 104 sec, respectively.

  5. Tuning the Electrical Memory Behavior from Nonvolatile to Volatile in Functional Copolyimides Bearing Varied Fluorene and Pyrene Moieties

    NASA Astrophysics Data System (ADS)

    Jia, Nanfang; Qi, Shengli; Tian, Guofeng; Wang, Xiaodong; Wu, Dezhen

    2017-04-01

    For producing polymer based electronics with good memory behavior, a series of functional copolyimides were designed and synthesized in this work by copolymerizing 3,3',4,4'-diphenylsulfonetetracarboxylic dianhydride (DSDA) with (9,9'-bis(4-aminophenyl)fluorene) (BAPF) and N, N-bis(4-aminophenyl) aminopyrene (DAPAP) diamines. The synthesized copolyimides DSDA/(DAPAP/BAPF) were denoted as coPI-DAPAP x ( x = 100, 50, 20, 10, 5, 1, 0), where x% represents the molar fraction of the DAPAP unit in the diamines. Characterization results indicate that the coPI-DAPAP x exhibits tunable electrical switching behaviors from write once read many times (WORM, nonvolatile, coPI-DAPAP100, coPI-DAPAP50, coPI-DAPAP20, coPI-DAPAP10) to the static random access memory (SRAM, volatile, coPI-DAPAP5, coPI-DAPAP1) with the variation of the DAPAP content. Optical and electrochemical characterization show gradually decreasing highest occupied molecular orbital levels and enlarged energy gap with the decrease of the DAPAP moiety, suggesting decreasing charge-transfer effect in the copolyimides, which can account for the observed WORM-SRAM memory conversion. Meanwhile, the charge transfer process was elucidated by quantum chemical calculation at B3LYP/6-31G(d) theory level. This work shows the effect of electron donor content on the memory behavior of polymer electronic materials.

  6. Nonvolatile floating gate memory containing AgInSbTe-SiO2 nanocomposite layer and capping the HfO2/SiO2 composite blocking oxide layer.

    PubMed

    Chiang, Kuo-Chang; Hsieh, Tsung-Eong

    2012-06-08

    An extremely large memory window shift of about 30.7 V and high charge storage density =2.3 × 10(13) cm(-2) at ± 23 V gate voltage sweep were achieved in the nonvolatile floating gate memory (NFGM) device containing the AgInSbTe (AIST)-SiO(2) nanocomposite as the charge trap layer and HfO(2)/SiO(2) as the blocking oxide layer. Due to the deep trap sites formed by high-density AIST nanocrystals (NCs) in the nanocomposite matrix and the high-barrier-height feature of the composite blocking oxide layer, a good retention property of the device with a charge loss of about 16.1% at ± 15 V gate voltage stress for 10(4) s at the test temperature of 85 °C was observed. In addition to inhibiting the Hf diffusion into the programming layer, incorporation of the SiO(2) layer prepared by plasma-enhanced chemical vapor deposition in the sample provided a good Coulomb blockade effect and allowed significant charge storage in AIST NCs. Analytical results demonstrated the feasibility of an AIST-SiO(2) nanocomposite layer in memory device fabrication with a simplified processing method and post-annealing at a comparatively low temperature of 400 °C in comparison with previous NC-based NFGM studies.

  7. Two-silicon-nanocrystal layer memory structure with improved retention characteristics.

    PubMed

    Nassiopoulou, A G; Salonidou, A

    2007-01-01

    It was demonstrated in the literature that the use of self-aligned doubly-stacked Si dots improves retention characteristics of a nanocrystal memory. In this paper, we show that a similar effect may be obtained by using two distinct layers of silicon nanocrystals within the gate dielectric of the MOS structure, if the nanocrystal density in each layer is high enough (above 10(12) dots/cm2) so as to get an average effect of at least one smaller dot underneath each larger one. The relative distance of the layers and their position from the silicon substrate and the gate metal are critical for optimum memory operation. Two different double-nanocrystal-layer structures were investigated. In the first structure the two nanocrystal layers were close together and they were composed of dots of different size (lower layer: 3 nm, upper layer: 5 nm), while in the second structure the dot layers were composed of dots of equal diameter (d = 3 nm) and their inter-distance was much larger. In both cases, the retention characteristics of the structure were improved compared with a single dot layer structure. In the second case this improvement was significantly larger than in the first case. Extrapolation of the data to ten years memory operation, showed that the charge loss after this time was only approximately 12%.

  8. Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate

    NASA Astrophysics Data System (ADS)

    Park, C. H.; Im, Seongil; Yun, Jungheum; Lee, Gun Hwan; Lee, Byoung H.; Sung, Myung M.

    2009-11-01

    We report on the fabrication of transparent top-gate ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with 200 nm thick poly(vinylidene fluoride/trifluoroethylene) ferroelectric layer; semitransparent 10 nm thin AgOx and transparent 130 nm thick indium-zinc oxide (IZO) were deposited on the ferroelectric polymer as gate electrode by rf sputtering. Our semitransparent NVM-TFT with AgOx gate operates under low voltage write-erase (WR-ER) pulse of ±20 V, but shows some degradation in retention property. In contrast, our transparent IZO-gated device displays very good retention properties but requires anomalously higher pulse of ±70 V for WR and ER states. Both devices stably operated under visible illuminations.

  9. Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate

    SciTech Connect

    Park, C. H.; Im, Seongil; Yun, Jungheum; Lee, Gun Hwan; Lee, Byoung H.; Sung, Myung M.

    2009-11-30

    We report on the fabrication of transparent top-gate ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with 200 nm thick poly(vinylidene fluoride/trifluoroethylene) ferroelectric layer; semitransparent 10 nm thin AgO{sub x} and transparent 130 nm thick indium-zinc oxide (IZO) were deposited on the ferroelectric polymer as gate electrode by rf sputtering. Our semitransparent NVM-TFT with AgO{sub x} gate operates under low voltage write-erase (WR-ER) pulse of {+-}20 V, but shows some degradation in retention property. In contrast, our transparent IZO-gated device displays very good retention properties but requires anomalously higher pulse of {+-}70 V for WR and ER states. Both devices stably operated under visible illuminations.

  10. Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

    SciTech Connect

    Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin E-mail: chilf@suda.edu.cn Chi, Li-Feng E-mail: chilf@suda.edu.cn Wang, Sui-Dong E-mail: chilf@suda.edu.cn

    2015-03-23

    Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

  11. Observation of AlO x material in electrical resistive switching for nonvolatile random access memory application

    NASA Astrophysics Data System (ADS)

    Jung, Kyun-Ho; Song, Seung-Gon; Park, Kyoung-Wan; Sok, Jung-Hyun; Kim, Kyong-Min; Park, Yun-Sun

    2017-03-01

    We fabricated an Al / AlO x / Al device by using a RF magnetron sputter system. The device showed a unipolar resistive switching process. In this study, the switching mechanism of the device followed the conductive filament model. The conduction mechanisms for the conductive filament model were explained by using Ohmic conduction for the low resistance state (LRS) and Schottky emission for the high resistance state (HRS). The average value of the resistance ratio between the HRS and the LRS was about 3.48 × 107 when the reading voltage (0.1 V) was achieved. The electrical property of the endurance was achieved under 50 switching cycles. A low switching voltage could be obtained for a low power consuming device. These results proved that the AlO x material has various possibilities for use in nonvolatile random access memory applications.

  12. Effect of tunneling layers on the performances of floating-gate based organic thin-film transistor nonvolatile memories

    SciTech Connect

    Wang, Wei Han, Jinhua; Ying, Jun; Xiang, Lanyi; Xie, Wenfa

    2014-09-22

    Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances were measured and compared. In the memory with a P(MMA-GMA) tunneling layer, typical unipolar hole transport was obtained with a relatively small mobility of 0.16 cm{sup 2}/V s. The unidirectional shift of turn-on voltage (V{sub on}) due to only holes trapped/detrapped in/from the floating gate resulted in a small memory window of 12.5 V at programming/erasing voltages (V{sub P}/V{sub E}) of ±100 V and a nonzero reading voltage. Benefited from the well-ordered molecule orientation and the trap-free surface of TTC layer, a considerably high hole mobility of 1.7 cm{sup 2}/V s and a visible feature of electrons accumulated in channel and trapped in floating-gate were achieved in the memory with a TTC tunneling layer. High hole mobility resulted in a high on current and a large memory on/off ratio of 600 at the V{sub P}/V{sub E} of ±100 V. Both holes and electrons were injected into floating-gate and overwritten each other, which resulted in a bidirectional V{sub on} shift. As a result, an enlarged memory window of 28.6 V at the V{sub P}/V{sub E} of ±100 V and a zero reading voltage were achieved. Based on our results, a strategy is proposed to optimize FG-OTFT-NVMs by choosing a right tunneling layer to improve the majority carrier mobility and realize ambipolar carriers injecting and trapping in the floating-gate.

  13. Enhancing charge-storage capacity of non-volatile memory devices using template-directed assembly of gold nanoparticles.

    PubMed

    Gupta, Raju Kumar; Krishnamoorthy, Sivashankar; Kusuma, Damar Yoga; Lee, Pooi See; Srinivasan, M P

    2012-04-07

    We demonstrate the controlled fabrication of aggregates of gold nanoparticles as a means of enhancing the charge-storage capacity of metal-insulator-semiconductor (MIS) devices by up to 300% at a low biasing voltage of ±4 V. Aggregates of citrate stabilized gold nanoparticles were obtained by directed electrostatic self-assembly onto an underlying nanopattern of positively charged centers. The underlying nanopatterns consist of amine functionalized gold nanoparticle arrays formed using amphiphilic diblock copolymer reverse micelles as templates. The hierarchical self-organization leads to a twelve-fold increase in the number density of the gold nanoparticles and therefore significantly increases the charge storage centers for the MIS device. The MIS structure showed counterclockwise C-V hysteresis curves indicating a good memory effect. A memory window of 1 V was obtained at a low biasing voltage of ±4 V. Furthermore, C-t measurements conducted after applying a charging bias of 4 V showed that the charge was retained beyond 20,000 s. The proposed strategy can be readily adapted for fabricating next generation solution processible non-volatile memory devices.

  14. In2O3 nanocrystal memory with the barrier engineered tunnel layer.

    PubMed

    Lee, Dong Uk; Kim, Seon Pil; Han, Dong Seok; Kim, Eun Kyu; Park, Goon-Ho; Cho, Won-Ju; Kim, Young-Ho

    2011-01-01

    In2O3 nanocrystal memories with barrier-engineered tunnel layers were fabricated on a p-type Si substrate. The structure and thickness of the barrier-engineered tunnel layers were SiO2/Si3N4/SiO2 (ONO) and 2/2/3 nm, respectively. The equivalent oxide thickness of the ONO tunnel layers was 5.64 nm. The average size and density of the In2O3 nanocrystals after the reaction between BPDA-PDA polyimide and the In thin film were about 8 nm and 4 x 10(11) cm(-2), respectively. The electrons were charged from the channel of the memory device to the quantum well of the In2O3 nanocrystal through the ONO tunnel layer via Fowler-Nordheim tunneling. The memory window was about 1.4 V when the program and erase conditions of the In2O3 nanocrystal memory device were 12 V for 1 s and -15 V for 200 ms.

  15. Nonvolatile modulation of electronic structure and correlative magnetism of L10-FePt films using significant strain induced by shape memory substrates

    PubMed Central

    Feng, Chun; Zhao, Jiancheng; Yang, Feng; Gong, Kui; Hao, Shijie; Cao, Yi; Hu, Chen; Zhang, Jingyan; Wang, Zhongqiang; Chen, Lei; Li, Sirui; Sun, Li; Cui, Lishan; Yu, Guanghua

    2016-01-01

    Tuning the lattice strain (εL) is a novel approach to manipulate the magnetic, electronic, and transport properties of spintronic materials. Achievable εL in thin film samples induced by traditional ferroelectric or flexible substrates is usually volatile and well below 1%. Such limits in the tuning capability cannot meet the requirements for nonvolatile applications of spintronic materials. This study answers to the challenge of introducing significant amount of elastic strain in deposited thin films so that noticeable tuning of the spintronic characteristics can be realized. Based on subtle elastic strain engineering of depositing L10-FePt films on pre-stretched NiTi(Nb) shape memory alloy substrates, steerable and nonvolatile lattice strain up to 2.18% has been achieved in the L10-FePt films by thermally controlling the shape memory effect of the substrates. Introduced strains at this level significantly modify the electronic density of state, orbital overlap, and spin-orbit coupling (SOC) strength in the FePt film, leading to nonvolatile modulation of magnetic anisotropy and magnetization reversal characteristics. This finding not only opens an efficient avenue for the nonvolatile tuning of SOC based magnetism and spintronic effects, but also helps to clarify the physical nature of pure strain effect. PMID:26830325

  16. Comparison of electron and hole charge-discharge dynamics in germanium nanocrystal flash memories

    NASA Astrophysics Data System (ADS)

    Akca, Imran B.; Dâna, Aykutlu; Aydinli, Atilla; Turan, Rasit

    2008-02-01

    Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents are observed to differ significantly and depend on annealing conditions chosen for the formation of nanocrystals. At low annealing temperatures, holes are seen to charge slower but to escape faster than electrons. They discharge slower than electrons when annealing temperatures are raised. The results suggest that discharge currents are dominated by the interface layer acting as a quantum well for holes and by direct tunneling for elec-trons.

  17. Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H2Pc heterojunction

    NASA Astrophysics Data System (ADS)

    Khasan, S. Karimov; Zubair, Ahmad; Farid, Touati; Mahroof-Tahir, M.; M. Muqeet, Rehman; S. Zameer, Abbas

    2015-11-01

    A novel surface-type nonvolatile electric memory elements based on organic semiconductors CuPc and H2Pc are fabricated by vacuum deposition of the CuPc and H2Pc films on preliminary deposited metallic (Ag and Cu) electrodes. The gap between Ag and Cu electrodes is 30-40 μm. For the current-voltage (I-V) characteristics the memory effect, switching effect, and negative differential resistance regions are observed. The switching mechanism is attributed to the electric-field-induced charge transfer. As a result the device switches from a low to a high-conductivity state and then back to a low conductivity state if the opposite polarity voltage is applied. The ratio of resistance at the high resistance state to that at the low resistance state is equal to 120-150. Under the switching condition, the electric current increases ˜ 80-100 times. A comparison between the forward and reverse I-V characteristics shows the presence of rectifying behavior. Project supported by the GIK Institute of Engineering Science and Technology, Pakistan and Physical Technical Institute of Academy of Sciences of Tajikistan.

  18. Characteristics of resistive switching in ZnO/SiO x multi-layers for transparent nonvolatile memory devices

    NASA Astrophysics Data System (ADS)

    Kim, Kyongmin; Kim, Eunkyeom; Kim, Youngill; Sok, Jung Hyun; Park, Kyoungwan

    2016-12-01

    Bipolar resistive switching in ZnO/SiO x bi-layer and ZnO/SiO x /ZnO tri-layer structures was investigated for nonvolatile memory applications. ZnO thin films were grown using the radiofrequency magnetron sputtering technique at room temperature. SiO x films were grown using plasma-enhanced chemical-vapor deposition at 200 °C. Multiple high-resistance states were observed during the set process. The high/low resistance state ratio was 10 during 100 on/off cycles. The tri-layer memory device exhibited better endurance properties than the bi-layer device. Because an asymmetric conducting filament has a weak point for charge conduction at the oxide interfaces, we attributed the good endurance property to the reproducible formation/rupture of "micro"-conducting filaments. Moreover, the dynamics of the oxygen ions in the SiO x layer plays an important role in resistive switching.

  19. Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate

    NASA Astrophysics Data System (ADS)

    Che, Yongli; Zhang, Yating; Cao, Xiaolong; Song, Xiaoxian; Cao, Mingxuan; Dai, Haitao; Yang, Junbo; Zhang, Guizhong; Yao, Jianquan

    2016-07-01

    Using only solution processing methods, we developed ambipolar quantum-dot (QD) transistor floating-gate memory (FGM) that uses Au nanoparticles as a floating gate. Because of the bipolarity of the active channel of PbSe QDs, the memory could easily trap holes or electrons in the floating gate by programming/erasing (P/E) operations, which could shift the threshold voltage both up and down. As a result, the memory exhibited good programmable memory characteristics: a large memory window (ΔVth ˜ 15 V) and a long retention time (>105 s). The magnitude of ΔVth depended on both P/E voltages and the bias voltage (VDS): ΔVth was a cubic function to VP/E and linearly depended on VDS. Therefore, this FGM based on a QD transistor is a promising alternative to its inorganic counterparts owing to its advantages of bipolarity, high mobility, low cost, and large-area production.

  20. Enhanced Giant Piezoresistance Performance of Sandwiched ZnS/Si/SiO2 Radial Heterostructure Nanotubes for Nonvolatile Stress Memory with Repeatable Writing and Erasing.

    PubMed

    Cheng, Baochang; Xiong, Li; Cai, Qiangsheng; Shi, Haiping; Zhao, Jie; Su, Xiaohui; Xiao, Yanhe; Lei, Shuijin

    2016-12-21

    It is a challenge to realize nonvolatile stress-writing memory. Herein, we propose a strategy to construct rewritable stress information storage devices, consisting of deliberately designing individual sandwiched ZnS/Si/SiO2 radial heterostructure nanotubes synthesized by one-step thermal evaporation method. A bulk trap-related Poole-Frenkel hopping mechanism is proposed. Carriers are localized in a narrow bandgap Si intermediate layer; moreover, incorporated impurities and heterointerface defects can serve as charge trap centers or storage mediators. Compressive strain can induce trap barrier height to decrease at relatively low operation bias voltage, whereas tensile strain can induce it to increase, resulting in a giant piezoresistance effect. After both loading compressive and tensile strains at low bias voltage, additionally, the emptying of trap states results in a high resistance state. However, the emptied trap states can be filled by applying a relatively high bias voltage without strains and, correspondingly, the memories return to low resistance state. The emptying and filling of trap states, respectively applied by strains and high electric field, result in a repeatable writing/erasing nonvolatile memory effect. The results indicate that the creation and modification of trap states in multiscale nanostructures can give an avenue to the development of novel nanodevices for rewritable nonvolatile stress sensor and memory.

  1. Retraction: High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory

    NASA Astrophysics Data System (ADS)

    Banerjee, Writam; Lu, Nianduan; Li, Ling; Sun, Pengxiao; Liu, Qi; Lv, Hangbing; Long, Shibing; Liu, Ming

    2015-03-01

    Retraction of `High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memory' by Writam Banerjee et al., Nanoscale, 2014, advance article (C4NR05077K)

  2. Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

    NASA Astrophysics Data System (ADS)

    Chen, C.; Yang, Y. C.; Zeng, F.; Pan, F.

    2010-08-01

    Highly stable and reproducible bipolar resistive switching effects are reported on Cu/AlN/Pt devices. Memory characteristics including large memory window of 103, long retention time of >106 s and good endurance of >103 were demonstrated. It is concluded that the reset current decreases as compliance current decreases, which provides an approach to suppress power consumption. The dominant conduction mechanisms of low resistance state and high resistance state were verified by Ohmic behavior and trap-controlled space charge limited current, respectively. The memory effect is explained by the model concerning redox reaction mediated formation and rupture of the conducting filament in AlN films.

  3. Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism.

    PubMed

    Zhou, Ye; Han, Su-Ting; Sonar, Prashant; Roy, V A L

    2013-01-01

    The capability of storing multi-bit information is one of the most important challenges in memory technologies. An ambipolar polymer which intrinsically has the ability to transport electrons and holes as a semiconducting layer provides an opportunity for the charge trapping layer to trap both electrons and holes efficiently. Here, we achieved large memory window and distinct multilevel data storage by utilizing the phenomena of ambipolar charge trapping mechanism. As fabricated flexible memory devices display five well-defined data levels with good endurance and retention properties showing potential application in printed electronics.

  4. Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications

    SciTech Connect

    Chang, Yu-Chi; Wang, Yeong-Her

    2015-03-23

    Using the biomaterial of Al-chelated gelatin (ACG) prepared by sol-gel method in the ITO/ACG/ITO structure, a highly transparent resistive random access memory (RRAM) was obtained. The transmittance of the fabricated device is approximately 83% at 550 nm while that of Al/gelatin/ITO is opaque. As to the ITO/gelatin/ITO RRAM, no resistive switching behavior can be seen. The ITO/ACG/ITO RRAM shows high ON/OFF current ratio (>10{sup 5}), low operation voltage, good uniformity, and retention characteristics at room temperature and 85 °C. The mechanism of the ACG-based memory devices is presented. The enhancement of these electrical properties can be attributed to the chelate effect of Al ions with gelatin. Results show that transparent ACG-based memory devices possess the potential for next-generation resistive memories and bio-electronic applications.

  5. Logic gates realized by nonvolatile GeTe/Sb2Te3 super lattice phase-change memory with a magnetic field input

    NASA Astrophysics Data System (ADS)

    Lu, Bin; Cheng, Xiaomin; Feng, Jinlong; Guan, Xiawei; Miao, Xiangshui

    2016-07-01

    Nonvolatile memory devices or circuits that can implement both storage and calculation are a crucial requirement for the efficiency improvement of modern computer. In this work, we realize logic functions by using [GeTe/Sb2Te3]n super lattice phase change memory (PCM) cell in which higher threshold voltage is needed for phase change with a magnetic field applied. First, the [GeTe/Sb2Te3]n super lattice cells were fabricated and the R-V curve was measured. Then we designed the logic circuits with the super lattice PCM cell verified by HSPICE simulation and experiments. Seven basic logic functions are first demonstrated in this letter; then several multi-input logic gates are presented. The proposed logic devices offer the advantages of simple structures and low power consumption, indicating that the super lattice PCM has the potential in the future nonvolatile central processing unit design, facilitating the development of massive parallel computing architecture.

  6. Flexible and stackable non-volatile resistive memory for high integration

    NASA Astrophysics Data System (ADS)

    Ali, Shawkat; Bae, Jinho; Lee, Chong Hyun

    2015-08-01

    We propose a novel flexible and stackable resistive random access memory (ReRAM) array with multi-layered crossbar structures fabricated on a PET flexible substrate through EHD system. The basic memory block of the proposed device is based on one resistor and multi-layered column memristors (1R-MCM) structure, which can be easily extended to 3 dimensional columns for a high integration. To fabricate the device, the materials Ag for top and bottom electrodes, PVP for memristor, and (MEH:PPV and PMMA in acetonitrile) for pull-up resistors are used. Memory single cell is consisted of a high OFF/ON ratio (~4663) memristor and a pull-up resistor (20 MΩ) that operate on the principles of voltage divider circuit. Memory logic data is retrieve in the form of voltage levels instead of sensing current the of crossbar array. Two memory crossbar arrays are stacked vertically and they are sharing column bars, each column's memristors are with a single pull-up resistor. A 3x3 stacked memory with two layers that can store 18 bits of data is demonstrated to realize on a small area for a high integration.

  7. Polymer-ultrathin graphite sheet-polymer composite structured flexible nonvolatile bistable organic memory devices

    NASA Astrophysics Data System (ADS)

    Ick Son, Dong; Shim, Jae Ho; Park, Dong Hee; Jung, Jae Hun; Lee, Jung Min; Park, Won Il; Kim, Tae Whan; Choi, Won Kook

    2011-07-01

    We present data, which were obtained before bending and after bending, for the electrical bistabilities, memory stabilities, and memory mechanisms of three-layer structured flexible bistable organic memory (BOM) devices, which were fabricated utilizing the ultrathin graphite sheets (UGS) sandwiched between insulating poly(methylmethacrylate) (PMMA) polymer layers. The UGS were formed by transferring UGS (about 30 layers) and using a simple spin-coating technique. Transmission electron microscopy (TEM) measurements were performed to investigate the microstructural properties of the PMMA/UGS/PMMA films. Current-voltage (I-V) measurements were carried out to investigate the electrical properties of the BOM devices containing the UGS embedded in the PMMA polymer. Current-time (I-t) and current-cycle measurements under flat and bent conditions were performed to investigate the memory stabilities of the BOM devices. The memory characteristics of the BOM maintained similar device efficiencies after bending and were stable during repeated bendings of the BOM devices. The mechanisms for these characteristics of the fabricated BOM are described on the basis of the I-V results.

  8. Multilevel characteristics and memory mechanisms for nonvolatile memory devices based on CuInS{sub 2} quantum dot-polymethylmethacrylate nanocomposites

    SciTech Connect

    Zhou, Yang; Yun, Dong Yeol; Kim, Tae Whan; Kim, Sang Wook

    2014-12-08

    Nonvolatile memory devices based on CuInS{sub 2} (CIS) quantum dots (QDs) embedded in a polymethylmethacrylate (PMMA) layer were fabricated using spin-coating method. The memory window widths of the capacitance-voltage (C-V) curves for the Al/CIS QDs embedded in PMMA layer/p-Si devices were 0.3, 0.6, and 1.0 V for sweep voltages of ±3, ±5, and ±7 V, respectively. Capacitance-cycle data demonstrated that the charge-trapping capability of the devices with an ON/OFF ratio value of 2.81 × 10{sup −10} was maintained for 8 × 10{sup 3} cycles without significant degradation and that the extrapolation of the ON/OFF ratio value to 1 × 10{sup 6} cycles converged to 2.40 × 10{sup −10}, indicative of the good stability of the devices. The memory mechanisms for the devices are described on the basis of the C-V curves and the energy-band diagrams.

  9. Silicon photonic integrated circuits with electrically programmable non-volatile memory functions.

    PubMed

    Song, J-F; Lim, A E-J; Luo, X-S; Fang, Q; Li, C; Jia, L X; Tu, X-G; Huang, Y; Zhou, H-F; Liow, T-Y; Lo, G-Q

    2016-09-19

    Conventional silicon photonic integrated circuits do not normally possess memory functions, which require on-chip power in order to maintain circuit states in tuned or field-configured switching routes. In this context, we present an electrically programmable add/drop microring resonator with a wavelength shift of 426 pm between the ON/OFF states. Electrical pulses are used to control the choice of the state. Our experimental results show a wavelength shift of 2.8 pm/ms and a light intensity variation of ~0.12 dB/ms for a fixed wavelength in the OFF state. Theoretically, our device can accommodate up to 65 states of multi-level memory functions. Such memory functions can be integrated into wavelength division mutiplexing (WDM) filters and applied to optical routers and computing architectures fulfilling large data downloading demands.

  10. The impact of tunnel oxide nitridation to reliability performance of charge storage non-volatile memory devices.

    PubMed

    Lee, Meng Chuan; Wong, Hin Yong

    2014-02-01

    This paper is written to review the development of critical research on the overall impact of tunnel oxide nitridation (TON) with the aim to mitigate reliability issues due to incessant technology scaling of charge storage NVM devices. For more than 30 years, charge storage non-volatile memory (NVM) has been critical in the evolution of intelligent electronic devices and continuous development of integrated technologies. Technology scaling is the primary strategy implemented throughout the semiconductor industry to increase NVM density and drive down average cost per bit. In this paper, critical reliability challenges and key innovative technical mitigation methods are reviewed. TON is one of the major candidates to replace conventional oxide layer for its superior quality and reliability performance. Major advantages and caveats of key TON process techniques are discussed. The impact of TON on quality and reliability performance of charge storage NVM devices is carefully reviewed with emphasis on major advantages and drawbacks of top and bottom nitridation. Physical mechanisms attributed to charge retention and V(t) instability phenomenon are also reviewed in this paper.

  11. Cycling Endurance of SONOS Non-Volatile Memory Stacks Prepared with Nitrided SiO(2)/Si(100) Intefaces

    SciTech Connect

    Habermehl, S.; Nasby, R.D.; Rightley, M.J.

    1999-01-11

    The effects of nitrided SiO{sub 2}/Si(100) interfaces upon cycling endurance in silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory transistors are investigated. Analysis of MOSFET sub-threshold characteristics indicate cycling degradation to be a manifestation of interface state (D{sub it}) generation at the tunnel oxide/silicon interface. After 10{sup 6} write/erase cycles, SONOS film stacks prepared with nitrided tunnel oxides exhibit enhanced cycling endurance with {Delta}D{sub it}=3x10{sup 12} V{sup -1}cm{sup -2}, compared to {Delta}D{sub it}=2x10{sup 13} V{sup -l}cm{sup -2} for non-nitrided tunnel oxides. Additionally, if the capping oxide is formed by steam oxidation, rather than by deposition, SONOS stacks prepared with non-nitrided tunnel oxides exhibit endurance characteristics similar to stacks with nitrided tunnel oxides. From this observation it is concluded that latent nitridation of the tunnel oxidehilicon interface occurs during steam oxide cap formation.

  12. Ferroelectricity in Covalently functionalized Two-dimensional Materials: Integration of High-mobility Semiconductors and Nonvolatile Memory.

    PubMed

    Wu, Menghao; Dong, Shuai; Yao, Kailun; Liu, Junming; Zeng, Xiao Cheng

    2016-11-09

    Realization of ferroelectric semiconductors by conjoining ferroelectricity with semiconductors remains a challenging task because most present-day ferroelectric materials are unsuitable for such a combination due to their wide bandgaps. Herein, we show first-principles evidence toward the realization of a new class of two-dimensional (2D) ferroelectric semiconductors through covalent functionalization of many prevailing 2D materials. Members in this new class of 2D ferroelectric semiconductors include covalently functionalized germanene, and stanene (Nat. Commun. 2014, 5, 3389), as well as MoS2 monolayer (Nat. Chem. 2015, 7, 45), covalent functionalization of the surface of bulk semiconductors such as silicon (111) (J. Phys. Chem. B 2006, 110 , 23898), and the substrates of oxides such as silica with self-assembly monolayers (Nano Lett. 2014, 14, 1354). The newly predicted 2D ferroelectric semiconductors possess high mobility, modest bandgaps, and distinct ferroelectricity that can be exploited for developing various heterostructural devices with desired functionalities. For example, we propose applications of the 2D materials as 2D ferroelectric field-effect transistors with ultrahigh on/off ratio, topological transistors with Dirac Fermions switchable between holes and electrons, ferroelectric junctions with ultrahigh electro-resistance, and multiferroic junctions for controlling spin by electric fields. All these heterostructural devices take advantage of the combination of high-mobility semiconductors with fast writing and nondestructive reading capability of nonvolatile memory, thereby holding great potential for the development of future multifunctional devices.

  13. Unipolar resistive switching characteristics and scaling behaviors in La2Mo2O9 thin films for nonvolatile memory applications

    NASA Astrophysics Data System (ADS)

    Hu, L.; Lin, G. T.; Luo, X.; Wei, R. H.; Zhu, X. B.; Song, W. H.; Dai, J. M.; Sun, Y. P.

    2016-12-01

    La2Mo2O9 (LMO) thin films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition and the resistive switching (RS) characteristics of the Au/LMO/Pt devices has been investigated. The Au/LMO/Pt devices show excellent unipolar RS characteristics with high resistance ratio between high resistance state and low resistance state (LRS), good endurance, and retention performances. The results of temperature dependence of resistance and x-ray photoelectron spectroscopy suggest that the observed RS characteristics can be explained by the formation and rupture of conducting filaments composed of oxygen vacancies. Furthermore, the plot of the reset current (IR) as a function of the third harmonic coefficient (B0) caused by Joule heating during the reset process shows scaling behavior with a power law of I R ∝ B0 - δ . The IR and reset power (PR) can also be scaled to the resistance in LRS (R0), i.e., I R ( P R ) ∝ R0 - α ( β ) . The observed scaling behaviors indicate the importance of the Joule heating for the RS characteristics of Au/LMO/Pt devices. These results demonstrate the potential application of LMO thin film in a nonvolatile memory device.

  14. Electrical Study of Trapped Charges in Copper-Doped Zinc Oxide Films by Scanning Probe Microscopy for Nonvolatile Memory Applications

    PubMed Central

    Su, Ting; Zhang, Haifeng

    2017-01-01

    Charge trapping properties of electrons and holes in copper-doped zinc oxide (ZnO:Cu) films have been studied by scanning probe microscopy. We investigated the surface potential dependence on the voltage and duration applied to the copper-doped ZnO films by Kelvin probe force microscopy. It is found that the Fermi Level of the 8 at.% Cu-doped ZnO films shifted by 0.53 eV comparing to undoped ZnO films. This shift indicates significant change in the electronic structure and energy balance in Cu-doped ZnO films. The Fermi Level (work function) of zinc oxide films can be tuned by Cu doping, which are important for developing this functional material. In addition, Kelvin probe force microscopy measurements demonstrate that the nature of contact at Pt-coated tip/ZnO:Cu interface is changed from Schottky contact to Ohmic contact by increasing sufficient amount of Cu ions. The charge trapping property of the ZnO films enhance greatly by Cu doping (~10 at.%). The improved stable bipolar charge trapping properties indicate that copper-doped ZnO films are promising for nonvolatile memory applications. PMID:28135335

  15. Fully transparent, non-volatile bipolar resistive memory based on flexible copolyimide films

    NASA Astrophysics Data System (ADS)

    Yu, Hwan-Chul; Kim, Moon Young; Hong, Minki; Nam, Kiyong; Choi, Ju-Young; Lee, Kwang-Hun; Baeck, Kyoung Koo; Kim, Kyoung-Kook; Cho, Soohaeng; Chung, Chan-Moon

    2017-01-01

    Partially aliphatic homopolyimides and copolyimides were prepared from rel-(1'R,3S,5'S)-spiro[furan-3(2H),6'-[3]oxabicyclo[3.2.1]octane]-2,2',4',5(4H)-tetrone (DAn), 2,6-diaminoanthracene (AnDA), and 4,4'-oxydianiline (ODA) by varying the molar ratio of AnDA and ODA. We utilized these polyimide films as the resistive switching layer in transparent memory devices. While WORM memory behavior was obtained with the PI-A100-O0-based device (molar feed ratio of DAn : AnDA : ODA = 1 : 1 : 0), the PI-A70-O30-based device (molar feed ratio of DAn : AnDA : ODA = 1 : 0.7 : 0.3) exhibited bipolar resistive switching behavior with stable retention for 104 s. This result implies that the memory properties can be controlled by changing the polyimide composition. The two devices prepared from PI-A100-O0 and PI-A70-O30 showed over 90% transmittance in the visible wavelength range from 400 to 800 nm. The behavior of the memory devices is considered to be governed by trap-controlled, space-charge limited conduction (SCLC) and local filament formation. [Figure not available: see fulltext.

  16. High Performance Nonvolatile Transistor Memories Utilizing Functional Polyimide-Based Supramolecular Electrets.

    PubMed

    Tung, Wei-Yao; Li, Meng-Hsien; Wu, Hung-Chin; Liu, Hsin-Yu; Hsieh, Yun-Ting; Chen, Wen-Chang

    2016-05-20

    We report pentacene-based organic field-effect transistor memory devices utilizing supramolecular electrets, consisting of a polyimide, PI(6FOH-ODPA), containing hydroxyl groups for hydrogen bonding with amine functionalized aromatic rings (AM) of 1-aniline (AM1), 2-naphthylamine (AM2), 2-aminoanthracene (AM3), and 1-aminopyrene (AM4). The effect of the phenyl ring size and composition of AM1-AM4 on the hole-trapping capability of the fabricated devices was investigated systematically. Under an operating voltage under ±40 V, the prepared devices using the electrets of 100 % AM1-AM4/PI ratios exhibited a memory window of 0, 8.59, 25.97, and 29.95 V, respectively, suggesting that the hole-trapping capability increased with enhancing phenyl ring size. The memory window was enhanced as the amount of AM in PI increased. Furthermore, the devices showed a long charge-retention time of 10(4)  s with an ON/OFF current ratio of around 10(3) -10(4) and multiple switching stability over 100 cycles. This study demonstrated that the electrical characteristics of the OFET memory devices could be manipulated through the chemical compositions of the supramolecular electrets.

  17. Non-volatile transistor memory devices using charge storage cross-linked core-shell nanoparticles.

    PubMed

    Lo, Chen-Tsyr; Watanabe, Yu; Oya, Hiroshi; Nakabayashi, Kazuhiro; Mori, Hideharu; Chen, Wen-Chang

    2016-06-07

    Solution processable cross-linked core-shell poly[poly(ethylene glycol)methylether methacrylate]-block-poly(2,5-dibromo-3-vinylthiophene) (poly(PEGMA)m-b-poly(DB3VT)n) nanoparticles are firstly explored as charge storage materials for transistor-type memory devices owing to their efficient and controllable ability in electric charge transfer and trapping.

  18. Multilevel Ultrafast Flexible Nanoscale Nonvolatile Hybrid Graphene Oxide-Titanium Oxide Memories.

    PubMed

    Nagareddy, V Karthik; Barnes, Matthew D; Zipoli, Federico; Lai, Khue T; Alexeev, Arseny M; Craciun, Monica Felicia; Wright, C David

    2017-02-27

    Graphene oxide (GO) resistive memories offer the promise of low-cost environmentally sustainable fabrication, high mechanical flexibility and high optical transparency, making them ideally suited to future flexible and transparent electronics applications. However, the dimensional and temporal scalability of GO memories, i.e., how small they can be made and how fast they can be switched, is an area that has received scant attention. Moreover, a plethora of GO resistive switching characteristics and mechanisms has been reported in the literature, sometimes leading to a confusing and conflicting picture. Consequently, the potential for graphene oxide to deliver high-performance memories operating on nanometer length and nanosecond time scales is currently unknown. Here we address such shortcomings, presenting not only the smallest (50 nm), fastest (sub-5 ns), thinnest (8 nm) GO-based memory devices produced to date, but also demonstrate that our approach provides easily accessible multilevel (4-level, 2-bit per cell) storage capabilities along with excellent endurance and retention performance-all on both rigid and flexible substrates. Via comprehensive experimental characterizations backed-up by detailed atomistic simulations, we also show that the resistive switching mechanism in our Pt/GO/Ti/Pt devices is driven by redox reactions in the interfacial region between the top (Ti) electrode and the GO layer.

  19. Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate

    NASA Astrophysics Data System (ADS)

    Mikhelashvili, V.; Meyler, B.; Shneider, Y.; Yofis, S.; Salzman, J.; Atiya, G.; Cohen-Hyams, T.; Ankonina, G.; Kaplan, W. D.; Lisiansky, M.; Roizin, Y.; Eisenstein, G.

    2013-02-01

    An optically triggered nonvolatile memory based on platinum nano-particles embedded within a SiO2 and HfO2 dielectric stack on a silicon on insulator (SOI) substrate is presented. The memory cell exhibits a very wide spectral response, from 220 nm to 950 nm; much wider than common photo-detectors fabricated on SOI. It offers several functionalities including a low programming voltage and wide hysteresis of the capacitance-voltage characteristics, an illumination and voltage sweep amplitude dependent hysteresis of the current-voltage characteristics, and plasmonic enhanced, efficient broad-band photo detection.

  20. A high performance triboelectric nanogenerator for self-powered non-volatile ferroelectric transistor memory

    NASA Astrophysics Data System (ADS)

    Fang, Huajing; Li, Qiang; He, Wenhui; Li, Jing; Xue, Qingtang; Xu, Chao; Zhang, Lijing; Ren, Tianling; Dong, Guifang; Chan, H. L. W.; Dai, Jiyan; Yan, Qingfeng

    2015-10-01

    We demonstrate an integrated module of self-powered ferroelectric transistor memory based on the combination of a ferroelectric FET and a triboelectric nanogenerator (TENG). The novel TENG was made of a self-assembled polystyrene nanosphere array and a poly(vinylidene fluoride) porous film. Owing to this unique structure, it exhibits an outstanding performance with an output voltage as high as 220 V per cycle. Meanwhile, the arch-shaped TENG is shown to be able to pole a bulk ferroelectric 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 (PMN-PT) single crystal directly. Based on this effect, a bottom gate ferroelectric FET was fabricated using pentacene as the channel material and a PMN-PT single crystal as the gate insulator. Systematic tests illustrate that the ON/OFF current ratio of this transistor memory element is approximately 103. More importantly, we demonstrate the feasibility to switch the polarization state of this FET gate insulator, namely the stored information, by finger tapping the TENG with a designed circuit. These results may open up a novel application of TENGs in the field of self-powered memory systems.We demonstrate an integrated module of self-powered ferroelectric transistor memory based on the combination of a ferroelectric FET and a triboelectric nanogenerator (TENG). The novel TENG was made of a self-assembled polystyrene nanosphere array and a poly(vinylidene fluoride) porous film. Owing to this unique structure, it exhibits an outstanding performance with an output voltage as high as 220 V per cycle. Meanwhile, the arch-shaped TENG is shown to be able to pole a bulk ferroelectric 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 (PMN-PT) single crystal directly. Based on this effect, a bottom gate ferroelectric FET was fabricated using pentacene as the channel material and a PMN-PT single crystal as the gate insulator. Systematic tests illustrate that the ON/OFF current ratio of this transistor memory element is approximately 103. More importantly, we demonstrate the

  1. Impact of time and space evolution of ion tracks in nonvolatile memory cells approaching nanoscale

    SciTech Connect

    Cellere, G.; Paccagnella, A.; Harboe-Sorensen, R.; Visconti, A.; Bonanomi, M.

    2010-12-15

    Swift heavy ions impacting on matter lose energy through the creation of dense tracks of charges. The study of the space and time evolution of energy exchange allows understanding the single event effects behavior in advanced microelectronic devices. In particular, the shrinking of minimum feature size of most advanced memory devices makes them very interesting test vehicles to study these effects since the device and the track dimensions are comparable; hence, measured effects are directly correlated with the time and space evolution of the energy release. In this work we are studying the time and space evolution of ion tracks by using advanced non volatile memories and Monte Carlo simulations. Experimental results are very well explained by the theoretical calculations.

  2. Nonvolatile optical memory via recoil-induced resonance in a pure two-level system

    NASA Astrophysics Data System (ADS)

    de Almeida, A. J. F.; Maynard, M.-A.; Banerjee, C.; Felinto, D.; Goldfarb, F.; Tabosa, J. W. R.

    2016-12-01

    We report on the storage of light via the phenomenon of recoil-induced resonance in a pure two-level system of cold cesium atoms. We use a strong coupling beam and a weak probe beam to couple different external momentum states of the cesium atom via two-photon Raman interaction which leads to the storage of the optical information of the probe beam. We have also measured the probe transmission spectrum, as well as the light storage spectrum which reveals very narrow subnatural resonance features showing absorption and gain. We have demonstrated that this memory presents the unique property of being insensitive to the reading process, which does not destroy the stored information leading to a memory lifetime limited only by the atomic thermal motion.

  3. Direct Observation of Room-Temperature Polar Ordering in Colloidal GeTe Nanocrystals

    SciTech Connect

    Polking, Mark J.; Zheng, Haimei; Urban, Jeffrey J.; Milliron, Delia J.; Chan, Emory; Caldwell, Marissa A.; Raoux, Simone; Kisielowski, Christian F.; Ager III, Joel W.; Ramesh, Ramamoorthy; Alivisatos, A.P.

    2009-12-07

    Ferroelectrics and other materials that exhibit spontaneous polar ordering have demonstrated immense promise for applications ranging from non-volatile memories to microelectromechanical systems. However, experimental evidence of polar ordering and effective synthetic strategies for accessing these materials are lacking for low-dimensional nanomaterials. Here, we demonstrate the synthesis of size-controlled nanocrystals of the polar material germanium telluride (GeTe) using colloidal chemistry and provide the first direct evidence of room-temperature polar ordering in nanocrystals less than 5 nm in size using aberration-corrected transmission electron microscopy. Synchrotron x-ray diffraction and Raman studies demonstrate a sizeable polar distortion and a reversible size-dependent polar phase transition in these nanocrystals. The stability of polar ordering in solution-processible nanomaterials suggests an economical avenue to Tbit/in2-density non-volatile memory devices and other applications.

  4. A high performance triboelectric nanogenerator for self-powered non-volatile ferroelectric transistor memory.

    PubMed

    Fang, Huajing; Li, Qiang; He, Wenhui; Li, Jing; Xue, Qingtang; Xu, Chao; Zhang, Lijing; Ren, Tianling; Dong, Guifang; Chan, H L W; Dai, Jiyan; Yan, Qingfeng

    2015-11-07

    We demonstrate an integrated module of self-powered ferroelectric transistor memory based on the combination of a ferroelectric FET and a triboelectric nanogenerator (TENG). The novel TENG was made of a self-assembled polystyrene nanosphere array and a poly(vinylidene fluoride) porous film. Owing to this unique structure, it exhibits an outstanding performance with an output voltage as high as 220 V per cycle. Meanwhile, the arch-shaped TENG is shown to be able to pole a bulk ferroelectric 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 (PMN-PT) single crystal directly. Based on this effect, a bottom gate ferroelectric FET was fabricated using pentacene as the channel material and a PMN-PT single crystal as the gate insulator. Systematic tests illustrate that the ON/OFF current ratio of this transistor memory element is approximately 10(3). More importantly, we demonstrate the feasibility to switch the polarization state of this FET gate insulator, namely the stored information, by finger tapping the TENG with a designed circuit. These results may open up a novel application of TENGs in the field of self-powered memory systems.

  5. Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics

    NASA Astrophysics Data System (ADS)

    Suresh, Arun

    The ability to make electronic devices, that are transparent to visible and near infrared wavelength, is a relatively new field of research in the development of the next generation of optoelectronic devices. A new class of inorganic thin-film transistor (TFT) channel material based on amorphous oxide semiconductors, that show high carrier mobility and high visual transparency, is being researched actively. The purpose of this dissertation is to develop amorphous oxide semiconductors by pulsed laser deposition, show their suitability for TFT applications and demonstrate other classes of devices such as non-volatile memory elements and integrated circuits such as ring oscillators and active matrix pixel elements. Indium gallium zinc oxide (IGZO) is discussed extensively in this dissertation. The influence of several deposition parameters is explored and oxygen partial pressure during deposition is found to have a profound effect on the electrical and optical characteristics of the IGZO films. By optimizing the deposition conditions, IGZO TFTs exhibit excellent electrical properties, even without any intentional annealing. This attribute along with the amorphous nature of the material also makes IGZO TFTs compatible with flexible substrates opening up various applications. IGZO TFTs with saturation field effect mobility of 12--16 cm 2 V-1 s-1 and subthreshold voltage swing of <200 mV decade-1 have been fabricated. By varying the oxygen partial pressure during deposition the conductivity of the channel was controlled to give a low off-state current ˜10 pA and a drain current on/off ratio of >1 x 108. Additionally, the effects of the oxygen partial pressure and the thickness of the semiconductor layer, the choice of the gate dielectric material and the device channel length on the electrical characteristics of the TFTs are explored. To evaluate IGZO TFT electrical stability, constant voltage bias stress measurements were carried out. The observed logarithmic

  6. Carbon nanotube memory by the self-assembly of silicon nanocrystals as charge storage nodes.

    PubMed

    Olmedo, Mario; Wang, Chuan; Ryu, Koungmin; Zhou, Huimei; Ren, Jingjian; Zhan, Ning; Zhou, Chongwu; Liu, Jianlin

    2011-10-25

    A memory structure based on self-aligned silicon nanocrystals (Si NCs) grown over Al(2)O(3)-covered parallel-aligned carbon nanotubes (CNTs) by gas source molecular beam epitaxy is reported. Electrostatic force microscopy characterizations directly prove the charging and discharging of discrete NCs through the Al(2)O(3) layer covering the CNTs. A CNT field effect transistor based on the NC/CNT structure is fabricated and characterized, demonstrating evident memory characteristics. Direct tunneling and Fowler-Nordheim tunneling phenomena are observed at different programming/erasing voltages. Retention is demonstrated to be on the order of 10(4) s. Although there is still plenty of room to enhance the performance, the results suggest that CNT-based NC memory with diminutive CNTs and NCs could be an alternative structure to replace traditional floating gate memory.

  7. Iii-V Compound Semiconductor Integrated Charge Storage Structures for Dynamic and Non-Volatile Memory Elements

    NASA Astrophysics Data System (ADS)

    Hetherington, Dale Laird

    This thesis presents an investigation into a novel group of GaAs charge storage devices. These devices, which are an integration of bipolar and junction field effect transistor structures were conceived, designed, fabricated, and tested within this study. The purpose was to analyse new types of charge storage devices, which are suitable for fabrication and lead to the development of dynamic and nonvolatile memories in III-V compound semiconductors. Currently, III-V semiconductor storage devices consist only of capacitors, where data is destroyed during reading and electrical erasure is difficult. In this work, four devices types were demonstrated that exhibit nondestructive reading, and three of the prototypes can be electrically erased. All types use the junction field effect transistor (JFET) for charge sensing, with each having different bipolar or epitaxial layer structure controlling the junction gate. The bottom epitaxial layer in each case served as the JFET channel. Two of the device types have three alternately doped layers, while the remaining two have four alternately doped layers. In all cases, removal of majority carriers from the middle layers constitutes stored charge. The missing carriers deplete the current carrying a region of the JFET channel. Drain current of the JFET becomes an indicator of stored charge. The basic function of each JFET memory element type is independent of interchanging n- and p- type doping within the structure type. Some performance advantage can be realized, however, by sensing with an n-type channel as compared to p- type due to increased carrier mobility. All device types exhibit storage time characteristics of order ten seconds. Devices are constructed in epitaxial layers grown by molecular beam epitaxy (MBE) reactors. The design of the epitaxial layers is an intrinsic part, together with the electrical design, of the storage device concept. These concepts are implemented first with photolithography masks which are used

  8. Extraction of the gate capacitance coupling coefficient in floating gate non-volatile memories: Statistical study of the effect of mismatching between floating gate memory and reference transistor in dummy cell extraction methods

    NASA Astrophysics Data System (ADS)

    Rafhay, Quentin; Beug, M. Florian; Duane, Russell

    2007-04-01

    This paper presents an experimental comparison of dummy cell extraction methods of the gate capacitance coupling coefficient for floating gate non-volatile memory structures from different geometries and technologies. These results show the significant influence of mismatching floating gate devices and reference transistors on the extraction of the gate capacitance coupling coefficient. In addition, it demonstrates the accuracy of the new bulk bias dummy cell extraction method and the importance of the β function, introduced recently in [Duane R, Beug F, Mathewson A. Novel capacitance coupling coefficient measurement methodology for floating gate non-volatile memory devices. IEEE Electr Dev Lett 2005;26(7):507-9], to determine matching pairs of floating gate memory and reference transistor.

  9. Non-volatile Al2O3 Memory using Nanoscale Al-rich Al2O3 Thin Film as a Charge Storage Layer

    NASA Astrophysics Data System (ADS)

    Nakata, Shunji; Saito, Kunio; Shimada, Masaru

    2006-04-01

    This article describes the fabrication process and capacitance-voltage (C-V) characteristics of a new non-volatile Al2O3 memory with nanoscale thin film deposited by electron-cyclotron-resonance sputtering. Al-rich Al2O3 shows characteristics somewhere between Al and Al2O3 in the refractive index and wet etching rate. C-V characteristics of Al-rich Al2O3 memory show a large hysteresis window due to the Al-rich structure, while there is no hysteresis window in the case of stoichiometric Al2O3. This memory is expected to stay non-volatile for several years or more because the capacitance value after writing and erasing operation remained almost unchanged after 4 h at T=85 °C. Also, another new memory structure comprising SiO2/Al2O3 and the Al-rich Al2O3 structure is proposed, which features increased mobility due to the reduction of electron scattering at the Si/Al2O3 interface.

  10. Mechanism of resistive switching in Cu/AlOx/W nonvolatile memory structures

    NASA Astrophysics Data System (ADS)

    Sleiman, A.; Sayers, P. W.; Mabrook, M. F.

    2013-04-01

    The mechanism for resistive switching in aluminum oxide (AlOx) based electrochemical metallization memory cells is presented. Copper/AlOx/tungsten (Cu/AlOx/W) cells show reproducible resistive switching with an ON/OFF ratio of about 5 × 102 at a reading voltage of 0.1 V and reliable retention characteristics. Resistive switching occurs due to the formation and rupture of a Cu filament between the active electrode (Cu) and the counter electrode (W). The conduction of the devices was explained through back-to-back Schottky contacts in the OFF state, while it exhibits ohmic behavior in the ON state. Thermionic emission model was used to calculate the barrier heights of the Schottky contacts. The rupture of the Cu filament proved to occur at the weakest point of the filament inside the AlOx. Using Ohms Law, the slope of the linear I-V characteristics in the ON state was used to extract the Cu filament resistance and its diameter was estimated to be between 6 and 23 nm.

  11. Germanium sulfide-based solid electrolytes for non-volatile memory

    NASA Astrophysics Data System (ADS)

    Balakrishnan, Muralikrishnan

    Programmable Metallization Cell (PMC) technology involves the storage of data as reduced metal ions in a solid electrolyte. Earlier work on Selenide-based (Ag-Ge-Se) PMC devices requires relatively low back-end-of-line processing (BEOL) since the electrolyte may undergo undesirable changes at process temperatures in excess of 200°C. This dissertation is focused on Sulfide-based (Ag/Cu-Ge-S) solid electrolytes which have better temperature stability and the PMC technology based on these materials is compatible with most BEOL process in CMOS Integrated Circuits. The devices fabricated using Ag-Ge-S and Cu-Ge-S solid electrolytes were tested after annealing at 300°C and 430°C. Extensive material analysis was performed on both the systems in an effort to understand the behavior of the devices at elevated temperatures. Electrical characterization testing involved standard memory characterization techniques such as quasi-static measurements tests, retention tests, speed tests, elevated temperature operation tests and endurance tests. The Ag-Ge-S PMC devices were made with different compositions to find out the optimum composition which would ensure reliable operation even after the high temperature anneal. The Sulfide-based PMC devices were also tested for reconfigurable logic applications with special test structures that would demonstrate the low resistance connections that can be achieved by programming the PMC elements using higher currents. Optimum composition of the starting glass was found from the material and data analysis, to ensure reliable operation of the Sulfide-based PMC devices with no degradation in the electrical characteristics even after the typical BEOL anneal.

  12. Electrically Modifiable Nonvolatile SONOS Synapses for Electronic Neural Networks.

    DTIC Science & Technology

    1992-09-30

    for the electrically reprogrammable analog conductance in an artificial neural network. We have demonstrated the attractive featuies of this synaptic ...Electrically Modifiable Synaptic Element for VLSI Neural Network Implementation", Proceedings of the 1991 IEEE Nonvolatile Semiconductor Memory Workshop...Nonvolatile Eletrically Modifiable Synaptic Element for VLSI Neural Network Implementation", 11th IEEE Nonvolatile Semiconductor Memory Workshop, 1991. 19. A

  13. Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer.

    PubMed

    Lee, Young Tack; Kwon, Hyeokjae; Kim, Jin Sung; Kim, Hong-Hee; Lee, Yun Jae; Lim, Jung Ah; Song, Yong-Won; Yi, Yeonjin; Choi, Won-Kook; Hwang, Do Kyung; Im, Seongil

    2015-10-27

    Two-dimensional van der Waals (2D vdWs) materials are a class of new materials that can provide important resources for future electronics and materials sciences due to their unique physical properties. Among 2D vdWs materials, black phosphorus (BP) has exhibited significant potential for use in electronic and optoelectronic applications because of its allotropic properties, high mobility, and direct and narrow band gap. Here, we demonstrate a few-layered BP-based nonvolatile memory transistor with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric top gate insulator. Experiments showed that our BP-based ferroelectric transistors operate satisfactorily at room temperature in ambient air and exhibit a clear memory window. Unlike conventional ambipolar BP transistors, our ferroelectric transistors showed only p-type characteristics due to the carbon-fluorine (C-F) dipole effect of the P(VDF-TrFE) layer, as well as the highest linear mobility value of 1159 cm(2) V(-1) s(-1) with a 10(3) on/off current ratio. For more advanced memory applications beyond unit memory devices, we implemented two memory inverter circuits, a resistive-load inverter circuit and a complementary inverter circuit, combined with an n-type molybdenum disulfide (MoS2) nanosheet. Our memory inverter circuits displayed a clear memory window of 15 V and memory output voltage efficiency of 95%.

  14. Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend.

    PubMed

    Leydecker, Tim; Herder, Martin; Pavlica, Egon; Bratina, Gvido; Hecht, Stefan; Orgiu, Emanuele; Samorì, Paolo

    2016-09-01

    Organic nanomaterials are attracting a great deal of interest for use in flexible electronic applications such as logic circuits, displays and solar cells. These technologies have already demonstrated good performances, but flexible organic memories are yet to deliver on all their promise in terms of volatility, operational voltage, write/erase speed, as well as the number of distinct attainable levels. Here, we report a multilevel non-volatile flexible optical memory thin-film transistor based on a blend of a reference polymer semiconductor, namely poly(3-hexylthiophene), and a photochromic diarylethene, switched with ultraviolet and green light irradiation. A three-terminal device featuring over 256 (8 bit storage) distinct current levels was fabricated, the memory states of which could be switched with 3 ns laser pulses. We also report robustness over 70 write-erase cycles and non-volatility exceeding 500 days. The device was implemented on a flexible polyethylene terephthalate substrate, validating the concept for integration into wearable electronics and smart nanodevices.

  15. Flexible non-volatile optical memory thin-film transistor device with over 256 distinct levels based on an organic bicomponent blend

    NASA Astrophysics Data System (ADS)

    Leydecker, Tim; Herder, Martin; Pavlica, Egon; Bratina, Gvido; Hecht, Stefan; Orgiu, Emanuele; Samorì, Paolo

    2016-09-01

    Organic nanomaterials are attracting a great deal of interest for use in flexible electronic applications such as logic circuits, displays and solar cells. These technologies have already demonstrated good performances, but flexible organic memories are yet to deliver on all their promise in terms of volatility, operational voltage, write/erase speed, as well as the number of distinct attainable levels. Here, we report a multilevel non-volatile flexible optical memory thin-film transistor based on a blend of a reference polymer semiconductor, namely poly(3-hexylthiophene), and a photochromic diarylethene, switched with ultraviolet and green light irradiation. A three-terminal device featuring over 256 (8 bit storage) distinct current levels was fabricated, the memory states of which could be switched with 3 ns laser pulses. We also report robustness over 70 write-erase cycles and non-volatility exceeding 500 days. The device was implemented on a flexible polyethylene terephthalate substrate, validating the concept for integration into wearable electronics and smart nanodevices.

  16. Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, extremely low energy straintronic memory

    NASA Astrophysics Data System (ADS)

    Ahmad, Hasnain; Atulasimha, Jayasimha; Bandyopadhyay, Supriyo

    2015-12-01

    We report reversible strain-induced magnetization switching between two stable/metastable states in ~300 nm sized FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. Voltage of one polarity applied across the substrate generates compressive strain in a nanomagnet and switches its magnetization to one state, while voltage of the opposite polarity generates tensile strain and switches the magnetization back to the original state. The two states can encode the two binary bits, and, using the right voltage polarity, one can write either bit deterministically. This portends an ultra-energy-efficient non-volatile “non-toggle” memory.

  17. Reversible strain-induced magnetization switching in FeGa nanomagnets: Pathway to a rewritable, non-volatile, non-toggle, extremely low energy straintronic memory

    PubMed Central

    Ahmad, Hasnain; Atulasimha, Jayasimha; Bandyopadhyay, Supriyo

    2015-01-01

    We report reversible strain-induced magnetization switching between two stable/metastable states in ~300 nm sized FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. Voltage of one polarity applied across the substrate generates compressive strain in a nanomagnet and switches its magnetization to one state, while voltage of the opposite polarity generates tensile strain and switches the magnetization back to the original state. The two states can encode the two binary bits, and, using the right voltage polarity, one can write either bit deterministically. This portends an ultra-energy-efficient non-volatile “non-toggle” memory. PMID:26657829

  18. Large scale integration of flexible non-volatile, re-addressable memories using P(VDF-TrFE) and amorphous oxide transistors

    NASA Astrophysics Data System (ADS)

    Gelinck, Gerwin H.; Cobb, Brian; van Breemen, Albert J. J. M.; Myny, Kris

    2015-07-01

    Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials for re-programmable non-volatile memories and high-performance, flexible thin-film transistors, respectively. However, realizing sophisticated transistor memory arrays has proven to be a challenge, and demonstrating reliable writing to and reading from such a large scale memory has thus far not been demonstrated. Here, we report an integration of ferroelectric, P(VDF-TrFE), transistor memory arrays with thin-film circuitry that can address each individual memory element in that array. n-type indium gallium zinc oxide is used as the active channel material in both the memory and logic thin-film transistors. The maximum process temperature is 200 °C, allowing plastic films to be used as substrate material. The technology was scaled up to 150 mm wafer size, and offers good reproducibility, high device yield and low device variation. This forms the basis for successful demonstration of memory arrays, read and write circuitry, and the integration of these.

  19. Nonvolatile memory thin-film transistors using biodegradable chicken albumen gate insulator and oxide semiconductor channel on eco-friendly paper substrate.

    PubMed

    Kim, So-Jung; Jeon, Da-Bin; Park, Jung-Ho; Ryu, Min-Ki; Yang, Jong-Heon; Hwang, Chi-Sun; Kim, Gi-Heon; Yoon, Sung-Min

    2015-03-04

    Nonvolatile memory thin-film transistors (TFTs) fabricated on paper substrates were proposed as one of the eco-friendly electronic devices. The gate stack was composed of chicken albumen gate insulator and In-Ga-Zn-O semiconducting channel layers. All the fabrication processes were performed below 120 °C. To improve the process compatibility of the synthethic paper substrate, an Al2O3 thin film was introduced as adhesion and barrier layers by atomic layer deposition. The dielectric properties of biomaterial albumen gate insulator were also enhanced by the preparation of Al2O3 capping layer. The nonvolatile bistabilities were realized by the switching phenomena of residual polarization within the albumen thin film. The fabricated device exhibited a counterclockwise hysteresis with a memory window of 11.8 V, high on/off ratio of approximately 1.1 × 10(6), and high saturation mobility (μsat) of 11.5 cm(2)/(V s). Furthermore, these device characteristics were not markedly degraded even after the delamination and under the bending situration. When the curvature radius was set as 5.3 cm, the ION/IOFF ratio and μsat were obtained to be 5.9 × 10(6) and 7.9 cm(2)/(V s), respectively.

  20. Resistive Switching of Individual Dislocations in Insulating Perovskites -- A Potential Route Towards Nanoscale Non-Volatile Memories.

    NASA Astrophysics Data System (ADS)

    Szot, Krzystof; Speier, Wolfgang; Bihlmayer, Gustav; Waser, Rainer

    2006-03-01

    Electrically controlled resistive switching effects have been reported for a broad variety of binary and multinary oxides in recent years. In particular, titanates, zirconates, and manganites have been in the focus of the studies. In many cases, the mechanism of the switching and the geometrical extension of the phenomenon (filaments vs. bulk) are still under discussion. In this work, we present evidence for a redox-based switching mechanism and we indicate a potential route towards highly scalable non-volatile memories based on this switching effect. The challenge our work is to utilize resistive switching mechanism with the aim to construct active electronic elements on a real nanoscale level, here by reversibly switching the electrical properties of individual dislocations by electrical stimuli. We demonstrate that standard undoped SrTiO3 single crystals, utilized as a model system, exhibit a switching behavior along filaments based on dislocations, mediated by oxygen transport. For this, we employed a three-step procedure: the crystals were, at first, annealed at elevated temperatures under reducing conditions, then exposed to 200mbar O2 pressure at room temperature, and finally subjected to an electric field under ultrahigh vacuum (electroformation). This treatment induced in a metal-insulator (SrTiO3)-metal (MIM) system a transition to metallic state. A hysteretic behavior appears after dynamical polarization of the MIM structure at the maximum electroforming currents. The shape of the I/V curve has the typical signature for bi-stable switching known for these types of perovskites. The positive temperature dependence of the resistance of the low- (LRS) and the high-resistance (HRS) state clearly identifies both states to be metallic in character. The inhomogeneity of the electrical transport becomes directly evident from a simple optical inspection and the conductivity maps as measured by LC-AFM of a planar structure. One can trace the formation of the

  1. Nonvolatile memories of Ge nanodots self-assembled by depositing ultrasmall amount Ge on SiO{sub 2} at room temperature

    SciTech Connect

    Hong, Seung Hui; Kim, Min Choul; Jeong, Pil Seong; Choi, Suk-Ho; Kim, Yong-Sung; Kim, Kyung Joong

    2008-03-03

    Ge nanodots (NDs) for nonvolatile memories (NVMs) have been self-assembled at room temperature (RT) by ion beam sputtering deposition of ultrasmall amount Ge (<72 ML) on SiO{sub 2} without postannealing. High-resolution transmission electron microscopy demonstrates the existence of well-defined Ge ND layers with respect to the SiO{sub 2}/Si interface. As Ge amount increases, the size of NDs increases, while their density decreases. A possible mechanism is proposed to explain the formation of Ge NDs at RT based on simple model calculations. The memory window that is estimated by capacitance-voltage hysteresis increases up to 18.7 V with increasing Ge amount up to 54 ML. The program speed is enhanced by increasing Ge amount and the charge-loss speed in the programed state is slower for larger Ge amount. These NVM properties are very promising in view of device application.

  2. Non-volatile resistive memory device fabricated from CdSe quantum dot embedded in thermally grown In2O3 nanostructure by oblique angle deposition

    NASA Astrophysics Data System (ADS)

    Kannan, V.; Kim, Hyun-Seok; Park, Hyun-Chang

    2016-11-01

    In this paper we report In2O3/CdSe quantum dot based non-volatile resistive memory device with ON/OFF ratio ∼1000. Indium nanostructures were grown by oblique angle deposition technique in a thermal evaporator. Indium oxide nanostructures had size ranging from 20 nm to 100 nm as observed from TEM and AFM methods. The facile device fabricated with a layer of CdSe quantum dot on indium oxide film exhibited excellent endurance characteristics over 100,000 switching cycles. Retention tests showed good stability for over 4000 s. Memory operating mechanism is proposed based on charge trapping/de-trapping in quantum dots with indium oxide acting as barrier leading to Coulomb blockade. The mechanism is supported by negative differential resistance (NDR) observed exclusively in the ON state.

  3. Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots

    NASA Astrophysics Data System (ADS)

    Ma, Zehao; Ooi, Poh Choon; Li, Fushan; Yun, Dong Yeol; Kim, Tae Whan

    2015-10-01

    Nonvolatile memory (NVM) devices based on a metal-insulator-metal structure consisting of CdSe/ZnS quantum dots embedded in polymethylsilsesquioxane dielectric layers were fabricated. The current-voltage ( I- V) curves showed a bistable current behavior and the presence of hysteresis. The current-time ( I- t) curves showed that the fabricated NVM memory devices were stable up to 1 × 104 s with a distinct ON/OFF ratio of 104 and were reprogrammable when the endurance test was performed. The extrapolation of the I- t curve to 105 s with corresponding current ON/OFF ratio 1 × 105 indicated a long performance stability of the NVM devices. Schottky emission, Poole-Frenkel emission, trapped-charge limited-current and Child-Langmuir law were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I- V characteristics.

  4. Achieving high mobility, low-voltage operating organic field-effect transistor nonvolatile memory by an ultraviolet-ozone treating ferroelectric terpolymer

    NASA Astrophysics Data System (ADS)

    Xiang, Lanyi; Wang, Wei; Xie, Wenfa

    2016-11-01

    Poly(vinylidene fluoride–trifluoroethylene) has been widely used as a dielectric of the ferroelectric organic field-effect transistor (FE-OFET) nonvolatile memory (NVM). Some critical issues, including low mobility and high operation voltage, existed in these FE-OFET NVMs, should be resolved before considering to their commercial application. In this paper, we demonstrated low-voltage operating FE-OFET NVMs based on a ferroelectric terpolymer poly(vinylidene-fluoride-trifluoroethylene-chlorotrifluoroethylene) [P(VDF-TrFE-CTFE)] owed to its low coercive field. By applying an ultraviolet-ozone (UVO) treatment to modify the surface of P(VDF-TrFE-CTFE) films, the growth model of the pentacene film was changed, which improved the pentacene grain size and the interface morphology of the pentacene/P(VDF-TrFE-CTFE). Thus, the mobility of the FE-OFET was significantly improved. As a result, a high performance FE-OFET NVM, with a high mobility of 0.8 cm2 V‑1 s‑1, large memory window of 15.4~19.2, good memory on/off ratio of 103, the reliable memory endurance over 100 cycles and stable memory retention ability, was achieved at a low operation voltage of ±15 V.

  5. Achieving high mobility, low-voltage operating organic field-effect transistor nonvolatile memory by an ultraviolet-ozone treating ferroelectric terpolymer

    PubMed Central

    Xiang, Lanyi; Wang, Wei; Xie, Wenfa

    2016-01-01

    Poly(vinylidene fluoride–trifluoroethylene) has been widely used as a dielectric of the ferroelectric organic field-effect transistor (FE-OFET) nonvolatile memory (NVM). Some critical issues, including low mobility and high operation voltage, existed in these FE-OFET NVMs, should be resolved before considering to their commercial application. In this paper, we demonstrated low-voltage operating FE-OFET NVMs based on a ferroelectric terpolymer poly(vinylidene-fluoride-trifluoroethylene-chlorotrifluoroethylene) [P(VDF-TrFE-CTFE)] owed to its low coercive field. By applying an ultraviolet-ozone (UVO) treatment to modify the surface of P(VDF-TrFE-CTFE) films, the growth model of the pentacene film was changed, which improved the pentacene grain size and the interface morphology of the pentacene/P(VDF-TrFE-CTFE). Thus, the mobility of the FE-OFET was significantly improved. As a result, a high performance FE-OFET NVM, with a high mobility of 0.8 cm2 V−1 s−1, large memory window of 15.4~19.2, good memory on/off ratio of 103, the reliable memory endurance over 100 cycles and stable memory retention ability, was achieved at a low operation voltage of ±15 V. PMID:27824101

  6. Nonvolatile Multilevel Memory and Boolean Logic Gates Based on a Single Ni /[Pb (Mg1 /3Nb2 /3)O3]0.7[PbTiO3]0.3/Ni Heterostructure

    NASA Astrophysics Data System (ADS)

    Shen, Jianxin; Shang, Dashan; Chai, Yisheng; Wang, Yue; Cong, Junzhuang; Shen, Shipeng; Yan, Liqin; Wang, Wenhong; Sun, Young

    2016-12-01

    Memtranstor that correlates charge and magnetic flux via nonlinear magnetoelectric effects has a great potential in developing next-generation nonvolatile devices. In addition to multilevel nonvolatile memory, we demonstrate here that nonvolatile logic gates such as nor and nand can be implemented in a single memtranstor made of the Ni /PMN -PT /Ni heterostructure. After applying two sequent voltage pulses (X1 , X2 ) as the logic inputs on the memtranstor, the output magnetoelectric voltage can be positive high (logic 1), positive low (logic 0), or negative (logic 0), depending on the levels of X1 and X2 . The underlying physical mechanism is related to the complete or partial reversal of ferroelectric polarization controlled by inputting selective voltage pulses, which determines the magnitude and sign of the magnetoelectric voltage coefficient. The combined functions of both memory and logic could enable the memtranstor as a promising candidate for future computing systems beyond von Neumann architecture.

  7. Piezoelectric control of magnetoelectric coupling driven non-volatile memory switching and self cooling effects in FE/FSMA multiferroic heterostructures

    NASA Astrophysics Data System (ADS)

    Singh, Kirandeep; Kaur, Davinder

    2017-02-01

    The manipulation of magnetic states and materials' spin degree-of-freedom via a control of an electric (E-) field has been recently pursued to develop magnetoelectric (ME) coupling-driven electronic data storage devices with high read/write endurance, fast dynamic response, and low energy dissipation. One major hurdle for this approach is to develop reliable materials which should be compatible with prevailing silicon (Si)-based complementary metal-oxide-semiconductor (CMOS) technology, simultaneously allowing small voltage for the tuning of magnetization switching. In this regard, multiferroic heterostructures where ferromagnetic (FM) and ferroelectric (FE) layers are alternatively grown on conventional Si substrates are promising as the piezoelectric control of magnetization switching is anticipated to be possible by an E-field. In this work, we study the ferromagnetic shape memory alloys based PbZr0.52Ti0.48O3/Ni50Mn35In15 (PZT/Ni-Mn-In) multiferroic heterostructures, and investigate their potential for CMOS compatible non-volatile magnetic data storage applications. We demonstrate the voltage-impulse controlled nonvolatile, reversible, and bistable magnetization switching at room temperature in Si-integrated PZT/Ni-Mn-In thin film multiferroic heterostructures. We also thoroughly unveil the various intriguing features in these materials, such as E-field tuned ME coupling and magnetocaloric effect, shape memory induced ferroelectric modulation, improved fatigue endurance as well as Refrigeration Capacity (RC). This comprehensive study suggests that these novel materials have a great potential for the development of unconventional nanoscale memory and refrigeration devices with self-cooling effect and enhanced refrigeration efficiency, thus providing a new venue for their applications.

  8. A simple device unit consisting of all NiO storage and switch elements for multilevel terabit nonvolatile random access memory.

    PubMed

    Lee, Myoung-Jae; Ahn, Seung-Eon; Lee, Chang Bum; Kim, Chang-Jung; Jeon, Sanghun; Chung, U-In; Yoo, In-Kyeong; Park, Gyeong-Su; Han, Seungwu; Hwang, In Rok; Park, Bae-Ho

    2011-11-01

    Present charge-based silicon memories are unlikely to reach terabit densities because of scaling limits. As the feature size of memory shrinks to just tens of nanometers, there is insufficient volume available to store charge. Also, process temperatures higher than 800 °C make silicon incompatible with three-dimensional (3D) stacking structures. Here we present a device unit consisting of all NiO storage and switch elements for multilevel terabit nonvolatile random access memory using resistance switching. It is demonstrated that NiO films are scalable to around 30 nm and compatible with multilevel cell technology. The device unit can be a building block for 3D stacking structure because of its simple structure and constituent, high performance, and process temperature lower than 300 °C. Memory resistance switching of NiO storage element is accompanied by an increase in density of grain boundary while threshold resistance switching of NiO switch element is controlled by current flowing through NiO film.

  9. Epitaxial iron oxide nanocrystals with memory function grown on Si substrates

    NASA Astrophysics Data System (ADS)

    Ishibe, Takafumi; Matsui, Hideki; Watanabe, Kentaro; Takeuchi, Shotaro; Sakai, Akira; Nakamura, Yoshiaki

    2016-05-01

    High-density Fe3O4-δ nanocrystals (NCs) were epitaxially grown on Si substrates by molecular beam epitaxy with epitaxial Ge NCs being used as nucleation sites. Scanning tunneling spectroscopy measurements showed that the surface bandgap of the as-grown Fe3O4-δ NCs was ˜0.2 eV, consistent with that reported for Fe3O4-δ films. Conductive atomic force microscopy measurements of the NCs revealed hysteresis in the voltage-current curves, indicating bipolar resistive switching behavior. The measurement results established the superiority of the NCs to thin conventional polycrystalline Fe3O4-δ films/Si in terms of resistive switching characteristics. This demonstrated the possibility of developing resistance random access memory devices composed of ubiquitous Fe3O4-δ NC materials.

  10. High-resolution transmission electron microscopy study of 1.5 nm ultrathin tunnel oxides of metal-nitride-oxide-silicon nonvolatile memory devices

    NASA Astrophysics Data System (ADS)

    Kamigaki, Yoshiaki; Minami, Shin-ichi; Shimotsu, Teruho

    1988-12-01

    Metal-nitride-oxide-silicon (MNOS) nonvolatile memory devices have an ultrathin tunnel oxide SiO2 layer and a signal-charge-stored nitride Si3N4 layer. Using high-resolution transmission electron microscopy (TEM), the cross-sectional structure of MNOS devices has been observed for the first time, including direct observation of tunnel SiO2. The following is revealed: (1) Tunnel SiO2 of 1.5 nm thickness is fabricated very uniformly on the surface of a Si substrate. (2) No mixing of tunnel SiO2 and Si3N4 is observed even though tunnel SiO2 is extremely thin. As a result, we can suggest that tunnel SiO2 in a MNOS device exhibits very stable morphology and stoichiometry characteristics.

  11. Four-state memory based on a giant and non-volatile converse magnetoelectric effect in FeAl/PIN-PMN-PT structure.

    PubMed

    Wei, Yanping; Gao, Cunxu; Chen, Zhendong; Xi, Shibo; Shao, Weixia; Zhang, Peng; Chen, Guilin; Li, Jiangong

    2016-07-15

    We report a stable, tunable and non-volatile converse magnetoelectric effect (ME) in a new type of FeAl/PIN-PMN-PT heterostructure at room temperature, with a giant electrical modulation of magnetization for which the maximum relative magnetization change (ΔM/M) is up to 66%. The 109° ferroelastic domain switching in the PIN-PMN-PT and coupling with the ferromagnetic (FM) film via uniaxial anisotropy originating from the PIN-PMN-PT (011) surface are the key roles in converse ME effect. We also propose here a new, four-state memory through which it is possible to modify the remanent magnetism state by adjusting the electric field. This work represents a helpful approach to securing electric-writing magnetic-reading with low energy consumption for future high-density information storage applications.

  12. Four-state memory based on a giant and non-volatile converse magnetoelectric effect in FeAl/PIN-PMN-PT structure

    NASA Astrophysics Data System (ADS)

    Wei, Yanping; Gao, Cunxu; Chen, Zhendong; Xi, Shibo; Shao, Weixia; Zhang, Peng; Chen, Guilin; Li, Jiangong

    2016-07-01

    We report a stable, tunable and non-volatile converse magnetoelectric effect (ME) in a new type of FeAl/PIN-PMN-PT heterostructure at room temperature, with a giant electrical modulation of magnetization for which the maximum relative magnetization change (ΔM/M) is up to 66%. The 109° ferroelastic domain switching in the PIN-PMN-PT and coupling with the ferromagnetic (FM) film via uniaxial anisotropy originating from the PIN-PMN-PT (011) surface are the key roles in converse ME effect. We also propose here a new, four-state memory through which it is possible to modify the remanent magnetism state by adjusting the electric field. This work represents a helpful approach to securing electric-writing magnetic-reading with low energy consumption for future high-density information storage applications.

  13. Sub-band transport mechanism and switching properties for resistive switching nonvolatile memories with structure of silver/aluminum oxide/p-type silicon

    SciTech Connect

    Liu, Yanhong; Li, La; Wang, Song; Gao, Ping; Pan, Lujun; Zhang, Jialiang; Zhou, Peng; Li, Jinhua; Weng, Zhankun

    2015-02-09

    In this paper, we discuss a model of sub-band in resistive switching nonvolatile memories with a structure of silver/aluminum oxide/p-type silicon (Ag/Al{sub x}O{sub y}/p-Si), in which the sub-band is formed by overlapping of wave functions of electron-occupied oxygen vacancies in Al{sub x}O{sub y} layer deposited by atomic layer deposition technology. The switching processes exhibit the characteristics of the bipolarity, discreteness, and no need of forming process, all of which are discussed deeply based on the model of sub-band. The relationships between the SET voltages and distribution of trap levels are analyzed qualitatively. The semiconductor-like behaviors of ON-state resistance affirm the sub-band transport mechanism instead of the metal filament mechanism.

  14. Four-state memory based on a giant and non-volatile converse magnetoelectric effect in FeAl/PIN-PMN-PT structure

    PubMed Central

    Wei, Yanping; Gao, Cunxu; Chen, Zhendong; Xi, Shibo; Shao, Weixia; Zhang, Peng; Chen, Guilin; Li, Jiangong

    2016-01-01

    We report a stable, tunable and non-volatile converse magnetoelectric effect (ME) in a new type of FeAl/PIN-PMN-PT heterostructure at room temperature, with a giant electrical modulation of magnetization for which the maximum relative magnetization change (ΔM/M) is up to 66%. The 109° ferroelastic domain switching in the PIN-PMN-PT and coupling with the ferromagnetic (FM) film via uniaxial anisotropy originating from the PIN-PMN-PT (011) surface are the key roles in converse ME effect. We also propose here a new, four-state memory through which it is possible to modify the remanent magnetism state by adjusting the electric field. This work represents a helpful approach to securing electric-writing magnetic-reading with low energy consumption for future high-density information storage applications. PMID:27417902

  15. Efficient Nonvolatile Rewritable Memories Based on Three-Dimensionally Confined Au Quantum Dots Embedded in Ultrathin Polyimide Layers

    NASA Astrophysics Data System (ADS)

    Wu, Chaoxing; Li, Fushan; Guo, Tailiang; Qu, Bo; Chen, Zhijian; Gong, Qihuang

    2011-03-01

    The electrical properties of a nonvolatile organic bistable device (OBD) utilizing Au quantum dots (QDs) sandwiched between two thin insulating polyimide layers were investigated. Current-voltage (I-V) measurements on the device at room temperature showed a current bistability due to the existence of the Au QDs. The maximum ON/OFF ratio of the current bistability in the OBD was 1 ×108, the largest value ever reported for a stable OBD. The device has excellent endurance and retention ability in ambient conditions. The electrical properties and operating mechanisms for the device are analyzed on the basis of the I-V results.

  16. Switching mechanism transition induced by annealing treatment in nonvolatile Cu/ZnO/Cu/ZnO/Pt resistive memory: From carrier trapping/detrapping to electrochemical metallization

    NASA Astrophysics Data System (ADS)

    Yang, Y. C.; Pan, F.; Zeng, F.; Liu, M.

    2009-12-01

    ZnO/Cu/ZnO trilayer films sandwiched between Cu and Pt electrodes were prepared for nonvolatile resistive memory applications. These structures show resistance switching under electrical bias both before and after a rapid thermal annealing (RTA) treatment, while it is found that the resistive switching effects in the two cases exhibit distinct characteristics. Compared with the as-fabricated device, the memory cell after RTA demonstrates remarkable device parameter improvements including lower threshold voltages, lower write current, and higher Roff/Ron ratio. A high-voltage forming process is avoided in the annealed device as well. Furthermore, the RTA treatment has triggered a switching mechanism transition from a carrier trapping/detrapping type to an electrochemical-redox-reaction-controlled conductive filament formation/rupture process, as indicated by different features in current-voltage characteristics. Both scanning electron microscopy observations and Auger electron spectroscopy depth profiles reveal that the Cu charge trapping layer in ZnO/Cu/ZnO disperses uniformly into the storage medium after RTA, while x-ray diffraction and x-ray photoelectron spectroscopy analyses demonstrate that the Cu atoms have lost electrons to become Cu2+ ions after dispersion. The above experimental facts indicate that the altered status of Cu in the ZnO/Cu/ZnO trilayer films during RTA treatment should be responsible for the switching mechanism transition. This study is envisioned to open the door for understanding the interrelation between different mechanisms that currently exist in the field of resistive memories.

  17. GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

    SciTech Connect

    Islam, Sk Masiul Chowdhury, Sisir; Sarkar, Krishnendu; Nagabhushan, B.; Banerji, P.; Chakraborty, S.

    2015-06-24

    Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

  18. Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications

    PubMed Central

    Kundu, Souvik; Maurya, Deepam; Clavel, Michael; Zhou, Yuan; Halder, Nripendra N.; Hudait, Mantu K.; Banerji, Pallab; Priya, Shashank

    2015-01-01

    We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~106 s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology. PMID:25683062

  19. Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications

    NASA Astrophysics Data System (ADS)

    Kundu, Souvik; Maurya, Deepam; Clavel, Michael; Zhou, Yuan; Halder, Nripendra N.; Hudait, Mantu K.; Banerji, Pallab; Priya, Shashank

    2015-02-01

    We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~106 s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology.

  20. Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications.

    PubMed

    Kundu, Souvik; Maurya, Deepam; Clavel, Michael; Zhou, Yuan; Halder, Nripendra N; Hudait, Mantu K; Banerji, Pallab; Priya, Shashank

    2015-02-16

    We introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x = 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFM study reveals that the domains reversal occurs with 180° phase change by applying external voltage, demonstrating its effectiveness for NVM device applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ~10(6) s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology.

  1. Characterization of Au/PbTi0.5Fe0.5O3/Si structure for possible multiferroic based non-volatile memory applications

    NASA Astrophysics Data System (ADS)

    Nawaz, S.; Roy, S.; Tulapurkar, A. A.; Palkar, V. R.

    2017-03-01

    Magnetoelectric multiferroic PbTi0.5Fe0.5O3 films are deposited on a ⟨100⟩ conducting p-Si substrate without any buffer layer by using pulsed laser deposition and characterized for possible non-volatile memory applications. Their crystalline structure and surface morphology were characterized by using x-ray diffraction and AFM techniques. HRTEM was employed to determine the film-substrate interface. The electronic structure of the film was investigated by XPS, and no signature of metal was found for all the elements. The chemical shift of the Ti 2p XPS peak is attributed to the replacement of Ti with Fe in the PbTiO3 matrix. Piezoelectric force microscopy (PFM) results indicate the 180° phase shift of ferroelectric polarization. The upward self-polarization phenomenon is also observed in the PFM study. Magnetic and magneto-electric coupling measurements were carried out to confirm the magnetic nature and electro-magnetic coupling characteristics. C-V measurements exhibit clock-wise hysteresis loops with a maximum memory window of 1.2 V and a sweep voltage of ±7 V. This study could influence the fabrication of silicon compatible multiple memory device structures.

  2. Role of the nano amorphous interface in the crystallization of Sb2Te3 towards non-volatile phase change memory: insights from first principles.

    PubMed

    Wang, Xue-Peng; Chen, Nian-Ke; Li, Xian-Bin; Cheng, Yan; Liu, X Q; Xia, Meng-Jiao; Song, Z T; Han, X D; Zhang, S B; Sun, Hong-Bo

    2014-06-14

    The nano amorphous interface is important as it controls the phase transition for data storage. Yet, atomic scale insights into such kinds of systems are still rare. By first-principles calculations, we obtain the atomic interface between amorphous Si and amorphous Sb2Te3, which prevails in the series of Si-Sb-Te phase change materials. This interface model reproduces the experiment-consistent phenomena, i.e. the amorphous stability of Sb2Te3, which defines the data retention in phase change memory, and is greatly enhanced by the nano interface. More importantly, this method offers a direct platform to explore the intrinsic mechanism to understand the material function: (1) by steric effects through the atomic "channel" of the amorphous interface, the arrangement of the Te network is significantly distorted and is separated from the p-orbital bond angle in the conventional phase-change material; and (2) through the electronic "channel" of the amorphous interface, high localized electrons in the form of a lone pair are "projected" to Sb2Te3 from amorphous Si by a proximity effect. These factors set an effective barrier for crystallization and improve the amorphous stability, and thus data retention. The present research and scheme sheds new light on the engineering and manipulation of other key amorphous interfaces, such as Si3N4/Ge2Sb2Te5 and C/Sb2Te3, through first-principles calculations towards non-volatile phase change memory.

  3. Singly and Doubly Occupied Higher Quantum States in Nanocrystals.

    PubMed

    Jeong, Juyeon; Yoon, Bitna; Kwon, Young-Wan; Choi, Dongsun; Jeong, Kwang Seob

    2017-02-08

    Filling the lowest quantum state of the conduction band of colloidal nanocrystals with a single electron, which is analogous to the filling the lowest unoccupied molecular orbital in a molecule with a single electron, has attracted much attention due to the possibility of harnessing the electron spin for potential spin-based applications. The quantized energy levels of the artificial atom, in principle, make it possible for a nanocrystal to be filled with an electron if the Fermi-energy level is optimally tuned during the nanocrystal growth. Here, we report the singly occupied quantum state (SOQS) and doubly occupied quantum state (DOQS) of a colloidal nanocrystal in steady state under ambient conditions. The number of electrons occupying the lowest quantum state can be controlled to be zero, one (unpaired), and two (paired) depending on the nanocrystal growth time via changing the stoichiometry of the nanocrystal. Electron paramagnetic resonance spectroscopy proved the nanocrystals with single electron to show superparamagnetic behavior, which is a direct evidence of the SOQS, whereas the DOQS of the two- or zero-electron occupied nanocrystals in the 1Se exhibit diamagnetic behavior. In combination with the superconducting quantum interference device measurement, it turns out that the SOQS of the HgSe colloidal quantum dots has superparamagnetic property. The appearance and change of the steady-state mid-IR intraband absorption spectrum reflect the sequential occupation of the 1Se state with electrons. The magnetic property of the colloidal quantum dot, initially determined by the chemical synthesis, can be tuned from diamagnetic to superparamagnetic and vice versa by varying the number of electrons through postchemical treatment. The switchable magnetic property will be very useful for further applications such as colloidal nanocrystal based spintronics, nonvolatile memory, infrared optoelectronics, catalyst, imaging, and quantum computing.

  4. Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

    PubMed Central

    2011-01-01

    Ge nanocrystals (Ge-NCs) embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV) ion implantation method followed by conventional thermal annealing at 800°C, the key variable being Ge+ ion implantation energy. Two different energies (3 and 5 keV) have been chosen for the evolution of Ge-NCs, which have been found to possess significant changes in structural and chemical properties of the Ge+-implanted dielectric films, and well reflected in the charge storage properties of the Al/SiN/Ge-NC + SiN/HfO2/SiO2/Si metal-insulator-semiconductor (MIS) memory structures. No Ge-NC was detected with a lower implantation energy of 3 keV at a dose of 1.5 × 1016 cm-2, whereas a well-defined 2D-array of nearly spherical and well-separated Ge-NCs within the SiN matrix was observed for the higher-energy-implanted (5 keV) sample for the same implanted dose. The MIS memory structures implanted with 5 keV exhibits better charge storage and retention characteristics compared to the low-energy-implanted sample, indicating that the charge storage is predominantly in Ge-NCs in the memory capacitor. A significant memory window of 3.95 V has been observed under the low operating voltage of ± 6 V with good retention properties, indicating the feasibility of these stack structures for low operating voltage, non-volatile memory devices. PMID:21711708

  5. Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

    SciTech Connect

    Di Pendina, G. E-mail: eldar.zianbetov@cea.fr Zianbetov, E. E-mail: eldar.zianbetov@cea.fr; Beigne, E. E-mail: eldar.zianbetov@cea.fr

    2015-05-07

    Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.

  6. Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

    NASA Astrophysics Data System (ADS)

    Di Pendina, G.; Zianbetov, E.; Beigne, E.

    2015-05-01

    Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.

  7. Synthesis, characterization, and nonvolatile ternary memory behavior of a larger heteroacene with nine linearly fused rings and two different heteroatoms.

    PubMed

    Gu, Pei-Yang; Zhou, Feng; Gao, Junkuo; Li, Gang; Wang, Chengyuan; Xu, Qing-Feng; Zhang, Qichun; Lu, Jian-Mei

    2013-09-25

    To achieve ultrahigh density memory devices with the capacity of 3(n) or larger, organic materials with multilevel stable states are highly desirable. Here, we reported a novel larger stable heteroacene, 2,3,13,14-tetradecyloxy-5,11,16,22-tetraaza-6,10,17,21-tetrachloro-7,9,18,20-tetraoxa-8,19-dicyanoenneacene (CDPzN), which has two different types of heteroatoms (O and N) and nine linearly fused rings. The sandwich-structure memory devices based on CDPzN exhibited excellent ternary memory behaviors with high ON2/ON1/OFF current ratios of 10(6.3)/10(4.3)/1 and good stability for these three states.

  8. A new model for the discharge behaviour of metal-nitride-oxide-silicon (MNOS) non-volatile memory devices

    NASA Astrophysics Data System (ADS)

    Heyns, Guido L.; Maes, Herman E.

    1987-10-01

    A new model is presented for the discharge mechanism of MNOS memory devices. For moderate and large charge contents the discharging effect can actually be ascribed to the compensation of the stored charge by the injection from the silicon into the nitride of carriers of the opposite type.

  9. Different importance of the volatile and non-volatile fractions of an olfactory signature for individual social recognition in rats versus mice and short-term versus long-term memory.

    PubMed

    Noack, Julia; Richter, Karin; Laube, Gregor; Haghgoo, Hojjat Allah; Veh, Rüdiger W; Engelmann, Mario

    2010-11-01

    When tested in the olfactory cued social recognition/discrimination test, rats and mice differ in their retention of a recognition memory for a previously encountered conspecific juvenile: Rats are able to recognize a given juvenile for approximately 45 min only whereas mice show not only short-term, but also long-term recognition memory (≥ 24 h). Here we modified the social recognition/social discrimination procedure to investigate the neurobiological mechanism(s) underlying the species differences. We presented a conspecific juvenile repeatedly to the experimental subjects and monitored the investigation duration as a measure for recognition. Presentation of only the volatile fraction of the juvenile olfactory signature was sufficient for both short- and long-term recognition in mice but not rats. Applying additional volatile, mono-molecular odours to the "to be recognized" juveniles failed to affect short-term memory in both species, but interfered with long-term recognition in mice. Finally immunocytochemical analysis of c-Fos as a marker for cellular activation, revealed that juvenile exposure stimulated areas involved in the processing of olfactory signals in both the main and the accessory olfactory bulb in mice. In rats, we measured an increased c-Fos synthesis almost exclusively in cells of the accessory olfactory bulb. Our data suggest that the species difference in the retention of social recognition memory is based on differences in the processing of the volatile versus non-volatile fraction of the individuals' olfactory signature. The non-volatile fraction is sufficient for retaining a short-term social memory only. Long-term social memory - as observed in mice - requires a processing of both the volatile and non-volatile fractions of the olfactory signature.

  10. Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

    NASA Astrophysics Data System (ADS)

    Lee, Joonmyoung; Bourim, El Mostafa; Lee, Wootae; Park, Jubong; Jo, Minseok; Jung, Seungjae; Shin, Jungho; Hwang, Hyunsang

    2010-10-01

    We have investigated the bilayer structure of binary oxides such as HfOx and ZrOx for applications to resistance memory. The ZrOx/HfOx bilayer structure shows a lower reset current and operating voltage than an HfOx monolayer under dc sweep voltage. Furthermore, the bilayer structure exhibits a tight distribution of switching parameters, good switching endurance up to 105 cycles, and good data retention at 85 °C. The resistive switching mechanism of memory devices incorporating the ZrOx/HfOx bilayer structure can be attributed to the control of multiple conducting filaments through the occurrence of redox reactions at the tip of the localized filament.

  11. Charge-trapping characteristics of fluorinated thin ZrO{sub 2} film for nonvolatile memory applications

    SciTech Connect

    Huang, X. D. E-mail: laip@eee.hku.hk; Shi, R. P.; Lai, P. T. E-mail: laip@eee.hku.hk

    2014-04-21

    The effects of fluorine treatment on the charge-trapping characteristics of thin ZrO{sub 2} film are investigated by physical and electrical characterization techniques. The formation of silicate interlayer at the ZrO{sub 2}/SiO{sub 2} interface is effectively suppressed by fluorine passivation. However, excessive fluorine diffusion into the Si substrate deteriorates the quality of the SiO{sub 2}/Si interface. Compared with the ZrO{sub 2}-based memory devices with no or excessive fluorine treatment, the one with suitable fluorine-treatment time shows higher operating speed and better retention due to less resistance of built-in electric field (formed by trapped electrons) against electron injection from the substrate and smaller trap-assisted tunneling leakage, resulting from improved ZrO{sub 2}/SiO{sub 2} and SiO{sub 2}/Si interfaces.

  12. LaTiON/LaON as band-engineered charge-trapping layer for nonvolatile memory applications

    NASA Astrophysics Data System (ADS)

    Huang, X. D.; Lai, P. T.; Sin, Johnny K. O.

    2012-07-01

    Charge-trapping characteristics of stacked LaTiON/LaON film were investigated based on Al/Al2O3/LaTiON-LaON/SiO2/Si (band-engineered MONOS) capacitors. The physical properties of the high- k films were analyzed by X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy. The band profile of this band-engineered MONOS device was characterized by investigating the current-conduction mechanism. By adopting stacked LaTiON/LaON film instead of LaON film as charge-trapping layer, improved electrical properties can be achieved in terms of larger memory window (5.4 V at ±10-V sweeping voltage), higher program speed with lower operating gate voltage (2.1 V at 100-μs +6 V), and smaller charge loss rate at 125 °C, mainly due to the variable tunneling path of charge carriers under program/erase and retention modes (realized by the band-engineered charge-trapping layer), high trap density of LaTiON, and large barrier height at LaTiON/SiO2 (2.3 eV).

  13. Multistability, ionic doping, and charge dynamics in electrosynthesized polypyrrole, polymer-nanoparticle blend nonvolatile memory, and fixed p-i-n junction polymer light-emitting electrochemical cells

    NASA Astrophysics Data System (ADS)

    Simon, Daniel Theodore

    A variety of factors make semiconducting polymers a fascinating alternative for both device development and new areas of fundamental research. Among these are solution processability, low cost, flexibility, and the strong dependence of conduction on the presence of charge compensating ions. With the lack of a complete fundamental understanding of the materials, and the growing demand for novel solutions to semiconductor device design, research in the field can take many, often multifaceted, routes. Due to ion-mediated conduction and versatility of fabrication, conducting polymers can provide a route to the study of neural signaling. In the first of three research topics presented, junctions of polypyrrole electropolymenzed on microelectrode arrays are demonstrated. Indi vidual junctions, when synthesized in a three-electrode configuration, exhibit current switching behavior analogous to neural weighting. Junctions copolymerized with thiophene exhibit current rectification and the nonlinear current-voltage behavior requisite for complex neural systems. Applications to larger networks, and eventual use in analysis of signaling, are discussed. In the second research topic, nonvolatile resistive memory consisting of gold nanoparticles embedded in a polymer film is examined using admittance spectroscopy. The frequency dependence of the devices indicates space-charge-limited transport in the high-conductivity "on" state, and similar transport in the lower-conductivity "off' state. Furthermore, a larger do capacitance of the on state indicates that a greater amount of filling of midgap trap levels introduced by the nanoparticles increases conductivity, leading to the memory effect. Implications on the question as to whether or not the on state is the result of percolation pathways is discussed. The third and final research topic is a presentation of enhanced efficiency of polymer light-emitting electrochemical cells (LECs) by means of forming a doping self

  14. Active Flash: Performance-Energy Tradeoffs for Out-of-Core Processing on Non-Volatile Memory Devices

    SciTech Connect

    Boboila, Simona; Kim, Youngjae; Vazhkudai, Sudharshan S; Desnoyers, Peter; Shipman, Galen M

    2012-01-01

    In this abstract, we study the performance and energy tradeoffs involved in migrating data analysis into the flash device, a process we refer to as Active Flash. The Active Flash paradigm is similar to 'active disks', which has received considerable attention. Active Flash allows us to move processing closer to data, thereby minimizing data movement costs and reducing power consumption. It enables true out-of-core computation. The conventional definition of out-of-core solvers refers to an approach to process data that is too large to fit in the main memory and, consequently, requires access to disk. However, in Active Flash, processing outside the host CPU literally frees the core and achieves real 'out-of-core' analysis. Moving analysis to data has long been desirable, not just at this level, but at all levels of the system hierarchy. However, this requires a detailed study on the tradeoffs involved in achieving analysis turnaround under an acceptable energy envelope. To this end, we first need to evaluate if there is enough computing power on the flash device to warrant such an exploration. Flash processors require decent computing power to run the internal logic pertaining to the Flash Translation Layer (FTL), which is responsible for operations such as address translation, garbage collection (GC) and wear-leveling. Modern SSDs are composed of multiple packages and several flash chips within a package. The packages are connected using multiple I/O channels to offer high I/O bandwidth. SSD computing power is also expected to be high enough to exploit such inherent internal parallelism within the drive to increase the bandwidth and to handle fast I/O requests. More recently, SSD devices are being equipped with powerful processing units and are even embedded with multicore CPUs (e.g. ARM Cortex-A9 embedded processor is advertised to reach 2GHz frequency and deliver 5000 DMIPS; OCZ RevoDrive X2 SSD has 4 SandForce controllers, each with 780MHz max frequency

  15. Fabrication of a magnetic-tunnel-junction-based nonvolatile logic-in-memory LSI with content-aware write error masking scheme achieving 92% storage capacity and 79% power reduction

    NASA Astrophysics Data System (ADS)

    Natsui, Masanori; Tamakoshi, Akira; Endoh, Tetsuo; Ohno, Hideo; Hanyu, Takahiro

    2017-04-01

    A magnetic-tunnel-junction (MTJ)-based video coding hardware with an MTJ-write-error-rate relaxation scheme as well as a nonvolatile storage capacity reduction technique is designed and fabricated in a 90 nm MOS and 75 nm perpendicular MTJ process. The proposed MTJ-oriented dynamic error masking scheme suppresses the effect of write operation errors on the operation result of LSI, which results in the increase in an acceptable MTJ write error rate up to 7.8 times with less than 6% area overhead, while achieving 79% power reduction compared with that of the static-random-access-memory-based one.

  16. Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells

    SciTech Connect

    Yun, Min Ju; Kim, Hee-Dong; Man Hong, Seok; Hyun Park, Ju; Su Jeon, Dong; Geun Kim, Tae

    2014-03-07

    The metal nanocrystals (NCs) embedded-NiN-based resistive random access memory cells are demonstrated using several metal NCs (i.e., Pt, Ni, and Ti) with different physical parameters in order to investigate the metal NC's dependence on resistive switching (RS) characteristics. First, depending on the electronegativity of metal, the size of metal NCs is determined and this affects the operating current of memory cells. If metal NCs with high electronegativity are incorporated, the size of the NCs is reduced; hence, the operating current is reduced owing to the reduced density of the electric field around the metal NCs. Second, the potential wells are formed by the difference of work function between the metal NCs and active layer, and the barrier height of the potential wells affects the level of operating voltage as well as the conduction mechanism of metal NCs embedded memory cells. Therefore, by understanding these correlations between the active layer and embedded metal NCs, we can optimize the RS properties of metal NCs embedded memory cells as well as predict their conduction mechanisms.

  17. Enhancement of the memory effects for nonvolatile memory devices fabricated utilizing ZnO nanoparticles embedded in a Si3N4 layer.

    PubMed

    Oh, Do-Hyun; Cho, Woon-Jo; Son, Dong Ick; Kim, Tae Whan

    2010-05-01

    ZnO nanoparticles embedded in a Si3N4 layer by using spin-coating and thermal treatment were fabricated to investigate the feasible applications in charge trapping regions of the metal/oxide/nitride/oxide/p-Si memory devices. The magnitude of the flatband voltage shift of the capacitance-voltage (C-V) curve for the Al/SiO2/ZnO nanoparticles embedded in Si3N4 layer/SiO2/p-Si memory device was larger than that of Al/ZnO nanoparticles embedded in SiO2 layer/p-Si and Al/SiO2/Si3N4/SiO2/p-Si devices. The increase in the flatband voltage shift of the C-V curve for the Al/SiO2/ZnO nanoparticles embedded in Si3N4 layer/SiO2/p-Si memory device in comparison with other devices was attributed to the existence of the ZnO nanoparticles or the interface trap states between the ZnO nanoparticles and the Si3N4 layer resulting from existence of ZnO nanoparticles embedded in the Si3N4 layer.

  18. Bistable magnetoresistance switching in exchange-coupled CoFe₂O₄--Fe₃O₄ binary nanocrystal superlattices by self-assembly and thermal annealing.

    PubMed

    Chen, Jun; Ye, Xingchen; Oh, Soong Ju; Kikkawa, James M; Kagan, Cherie R; Murray, Christopher B

    2013-02-26

    Self-assembly of multicomponent nanocrystal superlattices provides a modular approach to the design of metamaterials by choosing constituent nanocrystal building blocks with desired physical properties and engineering the interparticle coupling. In this work, we report the self-assembly of binary nanocrystal superlattices composed of magnetically hard CoFe₂O₄ nanocrystals and magnetically soft Fe₃O₄ nanocrystals. Both NaZn₁₃- and MgZn₂-type CoFe₂O₄--Fe₃O₄ binary nanocrystal superlattices have been formed by the liquid-air interfacial assembly approach. Exchange coupling is achieved in both types of binary superlattices after thermal annealing under vacuum at 400 °C. The exchange-coupled CoFe₂O₄--Fe₃O₄ binary nanocrystal superlattices show single-phase magnetization switching behavior and magnetoresistance switching behavior below 200 K. The NaZn₁₃-type CoFe₂O₄--Fe₃O₄ binary nanocrystal superlattices annealed at 500 °C even exhibit bistable magnetoresistance switching behavior at room temperature constituting a simple nonvolatile memory function.

  19. A 600-µW ultra-low-power associative processor for image pattern recognition employing magnetic tunnel junction-based nonvolatile memories with autonomic intelligent power-gating scheme

    NASA Astrophysics Data System (ADS)

    Ma, Yitao; Miura, Sadahiko; Honjo, Hiroaki; Ikeda, Shoji; Hanyu, Takahiro; Ohno, Hideo; Endoh, Tetsuo

    2016-04-01

    A novel associative processor using magnetic tunnel junction (MTJ)-based nonvolatile memories has been proposed and fabricated under a 90 nm CMOS/70 nm perpendicular-MTJ (p-MTJ) hybrid process for achieving the exceptionally low-power performance of image pattern recognition. A four-transistor 2-MTJ (4T-2MTJ) spin transfer torque magnetoresistive random access memory was adopted to completely eliminate the standby power. A self-directed intelligent power-gating (IPG) scheme specialized for this associative processor is employed to optimize the operation power by only autonomously activating currently accessed memory cells. The operations of a prototype chip at 20 MHz are demonstrated by measurement. The proposed processor can successfully carry out single texture pattern matching within 6.5 µs using 128-dimension bag-of-feature patterns, and the measured average operation power of the entire processor core is only 600 µW. Compared with the twin chip designed with 6T static random access memory, 91.2% power reductions are achieved. More than 88.0% power reductions are obtained compared with the latest associative memories. The further power performance analysis is discussed in detail, which verifies the special superiority of the proposed processor in power consumption for large-capacity memory-based VLSI systems.

  20. Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment.

    PubMed

    Huang, Chi-Hsien; Lin, Chih-Ting; Wang, Jer-Chyi; Chou, Chien; Ye, Yu-Ren; Cheng, Bing-Ming; Lai, Chao-Sung

    2012-11-30

    A plasma system with a complementary filter to shield samples from damage during tetrafluoromethane (CF(4)) plasma treatment was proposed in order to incorporate fluorine atoms into gadolinium oxide nanocrystals (Gd(2)O(3)-NCs) for flash memory applications. X-ray photoelectron spectroscopy confirmed that fluorine atoms were successfully introduced into the Gd(2)O(3)-NCs despite the use of a filter in the plasma-enhanced chemical vapour deposition system to shield against several potentially damaging species. The number of incorporated fluorine atoms can be controlled by varying the treatment time. The optimized memory window of the resulting flash memory devices was twice that of devices treated by a filterless system because more fluorine atoms were incorporated into the Gd(2)O(3)-NCs film with very little damage. This enlarged the bandgap energy from 5.48 to 6.83 eV, as observed by ultraviolet absorption measurements. This bandgap expansion can provide a large built-in electric field that allows more charges to be stored in the Gd(2)O(3)-NCs. The maximum improvement in the retention characteristic was >60%. Because plasma damage during treatment is minimal, maximum fluorination can be achieved. The concept of simply adding a filter to a plasma system to prevent plasma damage exhibits great promise for functionalization or modification of nanomaterials for advanced nanoelectronics while introducing minimal defects.

  1. Tunable bandgap energy of fluorinated nanocrystals for flash memory applications produced by low-damage plasma treatment

    NASA Astrophysics Data System (ADS)

    Huang, Chi-Hsien; Lin, Chih-Ting; Wang, Jer-Chyi; Chou, Chien; Ye, Yu-Ren; Cheng, Bing-Ming; Lai, Chao-Sung

    2012-11-01

    A plasma system with a complementary filter to shield samples from damage during tetrafluoromethane (CF4) plasma treatment was proposed in order to incorporate fluorine atoms into gadolinium oxide nanocrystals (Gd2O3-NCs) for flash memory applications. X-ray photoelectron spectroscopy confirmed that fluorine atoms were successfully introduced into the Gd2O3-NCs despite the use of a filter in the plasma-enhanced chemical vapour deposition system to shield against several potentially damaging species. The number of incorporated fluorine atoms can be controlled by varying the treatment time. The optimized memory window of the resulting flash memory devices was twice that of devices treated by a filterless system because more fluorine atoms were incorporated into the Gd2O3-NCs film with very little damage. This enlarged the bandgap energy from 5.48 to 6.83 eV, as observed by ultraviolet absorption measurements. This bandgap expansion can provide a large built-in electric field that allows more charges to be stored in the Gd2O3-NCs. The maximum improvement in the retention characteristic was >60%. Because plasma damage during treatment is minimal, maximum fluorination can be achieved. The concept of simply adding a filter to a plasma system to prevent plasma damage exhibits great promise for functionalization or modification of nanomaterials for advanced nanoelectronics while introducing minimal defects.

  2. Negative photoconductivity and memory effects of germanium nanocrystals embedded in HfO2 dielectric.

    PubMed

    Wang, Shiye; Liu, Weili; Zhang, Miao; Song, Zhitang; Lin, Chenglu; Dai, J Y; Lee, P F; Chan, H L W; Choy, C L

    2006-01-01

    A metal-insulator-semiconductor (MIS) structure containing an HfO2/SiO2 stack tunnel layer, isolated Germanium (Ge) nanocrystals, and an HfO2 capping layer, was obtained by an electron-beam evaporation method. A high-resolution transmission electron microscopy (HRTEM) study revealed that uniform and pronounced Ge nanocrystals had formed after annealing. Raman spectroscopy provided evidence for the formation of Ge-Ge bonds and the optimal annealing temperature for the crystallization ratio of the Ge. The electric properties of the MIS structure were characterized by capacitance-voltage (C-V) and current-voltage (I-V) measurements at room temperature. Negative photoconductivity was observed when the structure was under a forward bias, which screened the bias voltage, resulting in a decrease in the current at a given voltage and a negative shift in flat band voltage. A relatively high stored charge density of 3.27 x 10(12) cm 2 was also achieved.

  3. Radiation-hardened nonvolatile MNOS RAM

    SciTech Connect

    Wrobel, T.F.; Dodson, W.H.; Hash, G.L.; Jones, R.V.; Nasby, R.D.; Olson, R.J.

    1983-01-01

    A radiation hardened nonvolatile MNOS RAM is being developed at Sandia National Laboratories. The memory organization is 128 x 8 bits and utilizes two p-channel MNOS transistors per memory cell. The peripheral circuitry is constructed with CMOS metal gate and is processed with standard Sandia rad-hard processing techniques. The devices have memory retention after a dose-rate exposure of 1E12 rad(Si)/s, are functional after total dose exposure of 1E6 rad(Si), and are dose-rate upset resistant to levels of 7E8 rad(Si)/s.

  4. A radiation hardened nonvolatile MNOS RAM

    NASA Astrophysics Data System (ADS)

    Wrobel, T. F.; Dodson, W. H.; Hash, G. L.; Jones, R. V.; Nasby, R. D.; Olson, R. J.

    1983-12-01

    A radiation hardened nonvolatile MNOS RAM (SA2998) is being developed at Sandia National Laboratories. The memory organization is 128 x 8 bits and utilizes two p-channel MNOS transistors per memory cell. The peripheral circuitry is constructed with CMOS metal gate and is processed with standard Sandia rad-hard processing techniques. The device requires +10 V and +25 V for operation. The devices have memory retention after a dose-rate exposure of 1E12 rad(Si)/s, are functional after total dose exposure of 1E6 rad(Si), and are dose-rate upset resistant to levels of 7E8 rad(Si)/s.

  5. Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

    NASA Astrophysics Data System (ADS)

    Yuan, C. L.; Chan, M. Y.; Lee, P. S.; Darmawan, P.; Setiawan, Y.

    2007-04-01

    The integration of nanoparticles has high potential in technological applications and opens up possibilities of the development of new devices. Compared to the conventional floating gate memory, a structure containing nanocrystals embedded in dielectrics shows high potential to produce a memory with high endurance, low operating voltage, fast write-erase speeds and better immunity to soft errors [S. Tiwari, F. Rana, H. Hanafi et al. 1996 Appl.Phys. Lett. 68, 1377]. A significant improvement on data retention [J. J. Lee, X. Wang et al. 2003 Proceedings of the VLSI Technol. Symposium, p33] can be observed when discrete nanodots are used instead of continuous floating gate as charge storage nodes because local defect related leakage can be reduced efficiently. Furthermore, using a high-k dielectric in place of the conventional SiO2 based dielectric, nanodots flash memory is able to achieve significantly improved programming efficiency and data retention [A. Thean and J. -P. Leburton, 2002 IEEE Potentials 21, 35; D. W. Kim, T. Kim and S. K. Banerjee, 2003 IEEE Trans. Electron Devices 50, 1823]. We have recently successfully developed a method to produce nanodots embedded in high-k gate dielectrics [C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Electrochemical and Solid-State Letters 9, F53; C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Europhys. Lett. 74, 177]. In this paper, we fabricated the memory structure of Al2O3 nanocrystals embedded in amorphous Lu2O3 high k dielectric using pulsed laser ablation. The mean size and density of the Al2O3 nanocrystals are estimated to be about 5 nm and 7x1011 cm-2, respectively. Good electrical performances in terms of large memory window and good data retention were observed. Our preparation method is simple, fast and economical.

  6. Nonvolatile Array Of Synapses For Neural Network

    NASA Technical Reports Server (NTRS)

    Tawel, Raoul

    1993-01-01

    Elements of array programmed with help of ultraviolet light. A 32 x 32 very-large-scale integrated-circuit array of electronic synapses serves as building-block chip for analog neural-network computer. Synaptic weights stored in nonvolatile manner. Makes information content of array invulnerable to loss of power, and, by eliminating need for circuitry to refresh volatile synaptic memory, makes architecture simpler and more compact.

  7. Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications.

    PubMed

    Wang, Lai-Guo; Cao, Zheng-Yi; Qian, Xu; Zhu, Lin; Cui, Da-Peng; Li, Ai-Dong; Wu, Di

    2017-02-22

    Al2O3- or HfO2-based nanocomposite structures with embedded CoPtx nanocrystals (NCs) on TiN-coated Si substrates have been prepared by combination of thermal atomic layer deposition (ALD) and plasma-enhanced ALD for resistive random access memory (RRAM) applications. The impact of CoPtx NCs and their average size/density on the resistive switching properties has been explored. Compared to the control sample without CoPtx NCs, ALD-derived Pt/oxide/100 cycle-CoPtx NCs/TiN/SiO2/Si exhibits a typical bipolar, reliable, and reproducible resistive switching behavior, such as sharp distribution of RRAM parameters, smaller set/reset voltages, stable resistance ratio (≥10(2)) of OFF/ON states, better switching endurance up to 10(4) cycles, and longer data retention over 10(5) s. The possible resistive switching mechanism based on nanocomposite structures of oxide/CoPtx NCs has been proposed. The dominant conduction mechanisms in low- and high-resistance states of oxide-based device units with embedded CoPtx NCs are Ohmic behavior and space-charge-limited current, respectively. The insertion of CoPtx NCs can effectively improve the formation of conducting filaments due to the CoPtx NC-enhanced electric field intensity. Besides excellent resistive switching performances, the nanocomposite structures also simultaneously present ferromagnetic property. This work provides a flexible pathway by combining PEALD and TALD compatible with state-of-the-art Si-based technology for multifunctional electronic devices applications containing RRAM.

  8. Mechanical memory

    DOEpatents

    Gilkey, Jeffrey C.; Duesterhaus, Michelle A.; Peter, Frank J.; Renn, Rosemarie A.; Baker, Michael S.

    2006-08-15

    A first-in-first-out (FIFO) microelectromechanical memory apparatus (also termed a mechanical memory) is disclosed. The mechanical memory utilizes a plurality of memory cells, with each memory cell having a beam which can be bowed in either of two directions of curvature to indicate two different logic states for that memory cell. The memory cells can be arranged around a wheel which operates as a clocking actuator to serially shift data from one memory cell to the next. The mechanical memory can be formed using conventional surface micromachining, and can be formed as either a nonvolatile memory or as a volatile memory.

  9. Mechanical memory

    DOEpatents

    Gilkey, Jeffrey C.; Duesterhaus, Michelle A.; Peter, Frank J.; Renn, Rosemarie A.; Baker, Michael S.

    2006-05-16

    A first-in-first-out (FIFO) microelectromechanical memory apparatus (also termed a mechanical memory) is disclosed. The mechanical memory utilizes a plurality of memory cells, with each memory cell having a beam which can be bowed in either of two directions of curvature to indicate two different logic states for that memory cell. The memory cells can be arranged around a wheel which operates as a clocking actuator to serially shift data from one memory cell to the next. The mechanical memory can be formed using conventional surface micromachining, and can be formed as either a nonvolatile memory or as a volatile memory.

  10. Nanocrystal structures

    DOEpatents

    Eisler, Hans J.; Sundar, Vikram C.; Walsh, Michael E.; Klimov, Victor I.; Bawendi, Moungi G.; Smith, Henry I.

    2006-12-19

    A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II–VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.

  11. Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection.

    PubMed

    Kundu, Souvik; Clavel, Michael; Biswas, Pranab; Chen, Bo; Song, Hyun-Cheol; Kumar, Prashant; Halder, Nripendra N; Hudait, Mantu K; Banerji, Pallab; Sanghadasa, Mohan; Priya, Shashank

    2015-07-23

    We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.

  12. Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

    NASA Astrophysics Data System (ADS)

    Kundu, Souvik; Clavel, Michael; Biswas, Pranab; Chen, Bo; Song, Hyun-Cheol; Kumar, Prashant; Halder, Nripendra N.; Hudait, Mantu K.; Banerji, Pallab; Sanghadasa, Mohan; Priya, Shashank

    2015-07-01

    We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.

  13. Influence of Ti substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for nonvolatile memory applications

    NASA Astrophysics Data System (ADS)

    Pi-Chun Juan, Trevor; Liu, Yu-Wei

    2011-05-01

    Metal-ferroelectric (Ti-substituted BiFeO3)-insulator (HfO2)-semiconductor structures have been fabricated via the cosputtering technique. Ti4+ substitution at the Fe site was investigated through x-ray photoelectron spectra and x-ray diffraction patterns at postannealing temperatures of 500 to 700 °C. The capacitance-voltage memory windows as functions of the insulator film thickness and the dc power for Ti were measured and compared. A memory window of 3.1 V was obtained at a sweep voltage of 8 V under O2-rich conditions. The leakage current and the charge injection effect, especially gate injection, can be greatly improved by Ti substitution. The effects of the postannealing temperature and the substitution amount on the leakage current can be well explained by the defect reaction model.

  14. Retention characteristics of SNOS nonvolatile devices in a radiation environment

    SciTech Connect

    McWhorter, P.J.; Miller, S.L.; Dellin, T.A.; Axness, C.A.

    1987-12-01

    A quantitative model is developed that can accurately predict the threshold voltage shift, and hence data loss, in SNOS nonvolatile memory transistors over a wide range of dose rates. The model accounts for both the time dependent and radiation induced mechanisms leading to data loss. Experimental measurements are made to verify the validity and accuracy of the model under a variety of irradiation conditions.

  15. Radiation response of SNOS nonvolatile transistors

    NASA Astrophysics Data System (ADS)

    McWhorter, P. J.; Miller, S. L.; Dellin, T. A.

    1986-12-01

    Data loss and permanent damage resulting from the irradiation of SNOS (polySilicon-Nitride-Oxide-Silicon) nonvolatile memory transistors fabricated with current SNLA EEPROM processing are examined. It is shown that these transistors can retain data for ten years after a 500 krad irradiation, and can be programmed and function properly following a 1300 Mrad irradiation. A new model is presented which yields a simple analytical solution that accurately predicts the radiation induced threshold voltage shifts of SNOS transistors for a wide range of initial threshold voltages and total doses.

  16. Radiation response of SNOS nonvolatile transistors

    SciTech Connect

    McWhorter, P.J.; Miller, S.L.; Dellin, T.A.

    1986-01-01

    Data loss and permanent damage resulting from the irradiation of SNOS (polySilicon-Nitride-Oxide-Silicon) nonvolatile memory transistors fabricated with current SNLA EEPROM processing are examined. It is shown that these transistors can retain data for ten years after a 500 krad irradiation, and can be programmed and function properly following a 1300 Mrad irradiation. A new model is presented which yields a simple analytical solution that accurately predicts the radiation induced threshold voltage shifts of SNOS transistors for a wide range of initial threshold voltages and total doses. 10 refs.

  17. Acoustically assisted spin-transfer-torque switching of nanomagnets: An energy-efficient hybrid writing scheme for non-volatile memory

    SciTech Connect

    Biswas, Ayan K.; Bandyopadhyay, Supriyo; Atulasimha, Jayasimha

    2013-12-02

    We show that the energy dissipated to write bits in spin-transfer-torque random access memory can be reduced by an order of magnitude if a surface acoustic wave (SAW) is launched underneath the magneto-tunneling junctions (MTJs) storing the bits. The SAW-generated strain rotates the magnetization of every MTJs' soft magnet from the easy towards the hard axis, whereupon passage of a small spin-polarized current through a target MTJ selectively switches it to the desired state with > 99.99% probability at room temperature, thereby writing the bit. The other MTJs return to their original states at the completion of the SAW cycle.

  18. Pluto's Nonvolatile Chemical Compounds

    NASA Astrophysics Data System (ADS)

    Grundy, William M.; Binzel, Richard; Cook, Jason C.; Cruikshank, Dale P.; Dalle Ore, Cristina M.; Earle, Alissa M.; Ennico, Kimberly; Jennings, Donald; Howett, Carly; Kaiser, Ralf-Ingo; Linscott, Ivan; Lunsford, A. W.; Olkin, Catherine B.; Parker, Alex Harrison; Parker, Joel Wm.; Philippe, Sylvain; Protopapa, Silvia; Quirico, Eric; Reuter, D. C.; Schmitt, Bernard; Singer, Kelsi N.; Spencer, John R.; Stansberry, John A.; Stern, S. Alan; Tsang, Constantine; Verbiscer, Anne J.; Weaver, Harold A.; Weigle, G. E.; Young, Leslie

    2016-10-01

    Despite the migration of Pluto's volatile ices (N2, CO, and CH4) around the surface on seasonal timescales, the planet's non-volatile materials are not completely hidden from view. They occur in a variety of provinces formed over a wide range of timescales, including rugged mountains and chasms, the floors of mid-latitude craters, and an equatorial belt of especially dark and reddish material typified by the informally named Cthulhu Regio. NASA's New Horizons probe observed several of these regions at spatial resolutions as fine as 3 km/pixel with its LEISA imaging spectrometer, covering wavelengths from 1.25 to 2.5 microns. Various compounds that are much lighter than the tholin-like macromolecules responsible for the reddish coloration, but that are not volatile at Pluto surface temperatures such as methanol (CH3OH) and ethane (C2H6) have characteristic absorption bands within LEISA's wavelength range. This presentation will describe their geographic distributions and attempt to constrain their origins. Possibilities include an inheritance from Pluto's primordial composition (the likely source of H2O ice seen on Pluto's surface) or ongoing production from volatile precursors through photochemistry in Pluto's atmosphere or through radiolysis on Pluto's surface. New laboratory data inform the analysis.This work was supported by NASA's New Horizons project.

  19. Size Effect of Embedded Nanocrystals in Floating Gate MOSFET Devices

    NASA Astrophysics Data System (ADS)

    Cheng, X. Z.; Jalil, M. B. A.; Samudra, G. S.

    2011-12-01

    We investigate the transport and retention properties of a floating-gate MOSFET memory device incorporating embedded nanocrystals. Of particular interest is the nanocrystal size effect on the retention lifetime of the device. The quantum confinement effects and changes to the electrostatic energy arising from the decrease of the nanocrystal size are analyzed both numerically and analytically.

  20. The role of low levels of fullerene C60 nanocrystals on enhanced learning and memory of rats through persistent CaMKII activation.

    PubMed

    Chen, Liang; Miao, Yanyan; Chen, Lin; Xu, Jing; Wang, Xinxing; Zhao, Han; Shen, Yi; Hu, Yi; Bian, Yunpeng; Shen, Yuanyuan; Chen, Jutao; Zha, Yingying; Wen, Long-Ping; Wang, Ming

    2014-11-01

    Engineered nanomaterials are known to exhibit diverse and sometimes unexpected biological effects. Fullerene nanoparticles have been reported to specifically bind to and elicit persistent activation of hippocampal Ca(2+)/calmodulin-dependent protein kinase II (CaMKII), a multimeric intracellular serine/threonine kinase central to Ca(2+) signal transduction and critical for synaptic plasticity, but the functional consequence of that modulation is unknown. Here we show that low doses of fullerene C60 nanocrystals (Nano C60), delivered through intrahippocampal infusion and without any obvious cytotoxicity in hippocampal neuronal cells, enhance the long-term potentiation (LTP) of rats. Intraperitoneal injection of 320 μg/kg of Nano C60, once daily for 10 days, also enhanced spatial memory of rats in addition to an increase of LTP. In parallel, both the IH and IP administration of Nano C60 increased the autonomous activity and the level of threonine 286 (T286) autophosphorylation of CaMKII, enhanced post-synaptic AMPA/NMDA ratio, and triggered time-dependent activation of ERK and CREB. Our results reveal a striking and highly unexpected ability of Nano C60 in positively modulating learning and memory, an effect that is most likely manifested through locking CaMKII in an active conformation, and may have significant implications for the potential therapeutic applications of fullerene C60, a classic engineered nanomaterial.

  1. Electrically Modifiable Nonvolatile SONOS Synapses for Electronic Neural Networks

    DTIC Science & Technology

    1991-03-01

    Analog Nonvolatile Eletricaily Modifiabie Synaptic Element for VLSI Neural Network Implementation’, 11th IEEE Nonvoiat ile Semiconduc:or Memory Workshop... analog synaptic strength (weight) in a small chip area, the weight is temporary and requires periodic refresh similar to a DRAM. Thus, this dynamic ...addresses the implementation of an electronic element, which emulates the biological synaptic interconnection, in an artificial electronic neural system

  2. CMAT non-volatile spintronic computing: complementary MTJ logic

    NASA Astrophysics Data System (ADS)

    Friedman, Joseph S.

    2016-10-01

    Magnetic tunnel junctions (MTJs) have thoroughly demonstrated their utility as a non-volatile memory storage element, inspiring their application to a memory-in-logic computer that would overcome the von Neumann bottleneck. However, MTJ logic gates must be able to cause other MTJs to switch, thus ensuring the cascading capability fundamental to efficient computing. Complementary MTJ logic (CMAT) provides a simple circuit structure through which MTJs can be cascaded directly to perform logic operations. In this novel logic family, charge pulses resulting from MTJ switching create magnetic fields that switch other MTJs, providing impetus for further development of MTJs for computing applications.

  3. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack

    NASA Astrophysics Data System (ADS)

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin

    2015-12-01

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack under a maximal processing temperature of 300 oC. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at -17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at -14 V, a memory window of 2.08 V was still maintained after 103 P/E cycles, and a memory window of 1.1 V was retained after 105 s retention time.

  4. Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack

    SciTech Connect

    Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin

    2015-12-15

    Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack under a maximal processing temperature of 300 {sup o}C. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 10{sup 3} P/E cycles, and a memory window of 1.1 V was retained after 10{sup 5} s retention time.

  5. Nanocrystal synthesis

    SciTech Connect

    Tisdale, William; Prins, Ferry; Weidman, Mark; Beck, Megan

    2016-11-01

    A method of preparing monodisperse MX semiconductor nanocrystals can include contacting an M-containing precursor with an X donor to form a mixture, where the molar ratio between the M containing precursor and the X donor is large. Alternatively, if additional X donor is added during the reaction, a smaller ratio between the M containing precursor and the X donor can be used to prepare monodisperse MX semiconductor nanocrystals.

  6. Electrically Variable or Programmable Nonvolatile Capacitors

    NASA Technical Reports Server (NTRS)

    Shangqing, Liu; NaiJuan, Wu; Ignatieu, Alex; Jianren, Li

    2009-01-01

    Electrically variable or programmable capacitors based on the unique properties of thin perovskite films are undergoing development. These capacitors show promise of overcoming two important deficiencies of prior electrically programmable capacitors: Unlike in the case of varactors, it is not necessary to supply power continuously to make these capacitors retain their capacitance values. Hence, these capacitors may prove useful as components of nonvolatile analog and digital electronic memories. Unlike in the case of ferroelectric capacitors, it is possible to measure the capacitance values of these capacitors without changing the values. In other words, whereas readout of ferroelectric capacitors is destructive, readout of these capacitors can be nondestructive. A capacitor of this type is a simple two terminal device. It includes a thin film of a suitable perovskite as the dielectric layer, sandwiched between two metal or metal oxide electrodes (for example, see Figure 1). The utility of this device as a variable capacitor is based on a phenomenon, known as electrical-pulse-induced capacitance (EPIC), that is observed in thin perovskite films and especially in those thin perovskite films that exhibit the colossal magnetoresistive (CMR) effect. In EPIC, the application of one or more electrical pulses that exceed a threshold magnitude (typically somewhat less than 1 V) gives rise to a nonvolatile change in capacitance. The change in capacitance depends on the magnitude duration, polarity, and number of pulses. It is not necessary to apply a magnetic field or to cool the device below (or heat it above) room temperature to obtain EPIC. Examples of suitable CMR perovskites include Pr(1-x)Ca(x)MnO3, La(1-x)S-r(x)MnO3,and Nb(1-x)Ca(x)MnO3. Figure 2 is a block diagram showing an EPIC capacitor connected to a circuit that can vary the capacitance, measure the capacitance, and/or measure the resistance of the capacitor.

  7. Multistate nonvolatile straintronics controlled by a lateral electric field.

    PubMed

    Iurchuk, V; Doudin, B; Kundys, B

    2014-07-23

    We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable resistance changes on a CoFe overlayer. A proof-of-principle device, with the simplest resistance strain gage design, is shown as a memory cell exhibiting 17-memory states of high reproducibility and reliability for nonvolatile operations. Magnetoresistance of the film also depends on the cell state, and indicates a rewritable change of magnetic properties persisting in the remnant strain of the substrate. This makes it possible to combine strain, magnetic and resistive functionalities in a single memory element, and suggests that sub-coercive stress studies are of interest for straintronics applications.

  8. Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack

    SciTech Connect

    Lin, Chi-Chou; Kuo, Yue

    2014-02-28

    Metal-oxide-semiconductor capacitors made of the nanocrystalline cadmium selenide nc-CdSe embedded Zr-doped HfO{sub 2} high-k stack on the p-type silicon wafer have been fabricated and studied for their charge trapping, detrapping, and retention characteristics. Both holes and electrons can be trapped to the nanocrystal-embedded dielectric stack depending on the polarity of the applied gate voltage. With the same magnitude of applied gate voltage, the sample can trap more holes than electrons. A small amount of holes are loosely trapped at the nc-CdSe/high-k interface and the remaining holes are strongly trapped to the bulk nanocrystalline CdSe site. Charges trapped to the nanocrystals caused the Coulomb blockade effect in the leakage current vs. voltage curve, which is not observed in the control sample. The addition of the nanocrystals to the dielectric film changed the defect density and the physical thickness, which are reflected on the leakage current and the breakdown voltage. More than half of the originally trapped holes can be retained in the embedded nanocrystals for more than 10 yr. The nanocrystalline CdSe embedded high-k stack is a useful gate dielectric for this nonvolatile memory device.

  9. Flash drive memory apparatus and method

    NASA Technical Reports Server (NTRS)

    Hinchey, Michael G. (Inventor)

    2010-01-01

    A memory apparatus includes a non-volatile computer memory, a USB mass storage controller connected to the non-volatile computer memory, the USB mass storage controller including a daisy chain component, a male USB interface connected to the USB mass storage controller, and at least one other interface for a memory device, other than a USB interface, the at least one other interface being connected to the USB mass storage controller.

  10. Bistable Nonvolatile Elastic-Membrane Memcapacitor Exhibiting a Chaotic Behavior

    NASA Astrophysics Data System (ADS)

    Martinez-Rincon, Julian; Pershin, Yuriy V.

    2011-06-01

    We suggest a realization of a bistable non-volatile memory capacitor (memcapacitor). Its design utilizes a strained elastic membrane as a plate of a parallel-plate capacitor. The applied stress generates low and high capacitance configurations of the system. We demonstrate that a voltage pulse of an appropriate amplitude can be used to reliably switch the memcapacitor into the desired capacitance state. Moreover, charged-voltage and capacitance-voltage curves of such a system demonstrate hysteresis and transition into a chaotic regime in a certain range of ac voltage amplitudes and frequencies. Membrane memcapacitor connected to a voltage source comprises a single element nonautonomous chaotic circuit.

  11. Nonvolatile optically-erased colloidal memristors

    NASA Astrophysics Data System (ADS)

    Huebner, Christopher F.; Tsyalkovsky, Volodymyr; Bandera, Yuriy; Burdette, Mary K.; Shetzline, Jamie A.; Tonkin, Charles; Creager, Stephen E.; Foulger, Stephen H.

    2015-01-01

    A nonconjugated methacrylate terpolymer containing carbazole moieties (electron donors), 1,3,4-oxadiazole moieties (electron acceptors), and Coumarin-6 in the pendant groups was synthesized via free radical copolymerization of methacrylate monomers containing the respective functional groups. The terpolymer was formed into 57 nm particles through a mini-emulsion route. For a thin 100 nm film of the fused particles sandwiched between an indium-tin oxide (ITO) electrode and an Al electrode, the structure behaved as a nonvolatile flash (rewritable) memory with accessible electronic states that could be written, read, and optically erased. The device exhibited a turn-on voltage of ca. -4.5 VDC and a 106 current ratio. A device in the ON high conductance state could be reverted to the OFF state with a short exposure to a 360 nm light source. The development of semiconducting colloidal inks that can be converted into electroactive devices through a continuous processing method is a critical step in the widespread adoption of these 2D manufacturing technologies for printed electronics.

  12. Memory

    MedlinePlus

    ... it has to decide what is worth remembering. Memory is the process of storing and then remembering this information. There are different types of memory. Short-term memory stores information for a few ...

  13. Charge injection and discharging of Si nanocrystals and arrays by atomic force microscopy

    NASA Technical Reports Server (NTRS)

    Boer, E.; Ostraat, M.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.

    2000-01-01

    Charge injection and storage in dense arrays of silicon nanocrystals in SiO(sub 2) is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few-or single- electron storage in a small number of nanocrystal elements.

  14. Memory.

    ERIC Educational Resources Information Center

    McKean, Kevin

    1983-01-01

    Discusses current research (including that involving amnesiacs and snails) into the nature of the memory process, differentiating between and providing examples of "fact" memory and "skill" memory. Suggests that three brain parts (thalamus, fornix, mammilary body) are involved in the memory process. (JN)

  15. Multilevel non-volatile data storage utilizing common current hysteresis of networked single walled carbon nanotubes.

    PubMed

    Hwang, Ihn; Wang, Wei; Hwang, Sun Kak; Cho, Sung Hwan; Kim, Kang Lib; Jeong, Beomjin; Huh, June; Park, Cheolmin

    2016-05-21

    The characteristic source-drain current hysteresis frequently observed in field-effect transistors with networked single walled carbon-nanotube (NSWNT) channels is problematic for the reliable switching and sensing performance of devices. But the two distinct current states of the hysteresis curve at a zero gate voltage can be useful for memory applications. In this work, we demonstrate a novel non-volatile transistor memory with solution-processed NSWNTs which are suitable for multilevel data programming and reading. A polymer passivation layer with a small amount of water employed on the top of the NSWNT channel serves as an efficient gate voltage dependent charge trapping and de-trapping site. A systematic investigation evidences that the water mixed in a polymer passivation solution is critical for reliable non-volatile memory operation. The optimized device is air-stable and temperature-resistive up to 80 °C and exhibits excellent non-volatile memory performance with an on/off current ratio greater than 10(4), a switching time less than 100 ms, data retention longer than 4000 s, and write/read endurance over 100 cycles. Furthermore, the gate voltage dependent charge injection mediated by water in the passivation layer allowed for multilevel operation of our memory in which 4 distinct current states were programmed repetitively and preserved over a long time period.

  16. Resistive switches and memories from silicon oxide.

    PubMed

    Yao, Jun; Sun, Zhengzong; Zhong, Lin; Natelson, Douglas; Tour, James M

    2010-10-13

    Because of its excellent dielectric properties, silicon oxide (SiO(x)) has long been used and considered as a passive, insulating component in the construction of electronic devices. In contrast, here we demonstrate resistive switches and memories that use SiO(x) as the sole active material and can be implemented in entirely metal-free embodiments. Through cross-sectional transmission electron microscopy, we determine that the switching takes place through the voltage-driven formation and modification of silicon (Si) nanocrystals (NCs) embedded in the SiO(x) matrix, with SiO(x) itself also serving as the source of the formation of this Si pathway. The small sizes of the Si NCs (d ∼ 5 nm) suggest that scaling to ultrasmall domains could be feasible. Meanwhile, the switch also shows robust nonvolatile properties, high ON/OFF ratios (>10(5)), fast switching (sub-100-ns), and good endurance (10(4) write-erase cycles). These properties in a SiO(x)-based material composition showcase its potentials in constructing memory or logic devices that are fully CMOS compatible.

  17. Nonvolatile, electrically erasable programmable ROM

    NASA Astrophysics Data System (ADS)

    El-Dessouky, A.

    1984-01-01

    The processing technology for integration of MNOS-EEPROMs and NMOS Logic was investigated as p-well isolation. Memory characteristics of both Si gate and metal gate MNOS devices are investigated for nitride constitution which aims for lower programming voltages and good memory performance. The complete fabrication process for 128 byte SNOS-EEPROM chip is described by using high voltage depletion MOS devices in p-well technology. Another test vehicle uses 4 x 4 metal gate MNOS array to demonstrate possible fabrication of 12 V programmable scaled MNOS devices with 10 years retention after 10 to the 5th power endurance.

  18. Novel Ferroelectric CMOS Circuits as a Nonvolatile Logic

    NASA Astrophysics Data System (ADS)

    Takahashi, M.; Horiuchi, T.; Li, Q.-H.; Wang, S.; Yun, K. Y.; Sakai, S.

    2008-03-01

    We propose a novel and promising nonvolatile-logic circuit constructed by p channel type (Pch) and n channel type (Nch) ferroelectric gate field effect transistors (FeFETs), which we named a ferroelectric CMOS (FeCMOS) circuit. The circuit works as both logic and memory. We fabricated a NOT logic FeCMOS device which have Pt metal gates and gate oxides of ferroelectric SrBi2Ta2O9 (SBT) and high-k HfAlO on Si. Key technology was adjusting threshold voltages of the FeFETs as well as preparing those of high quality. We demonstrate basic operations of the NOT-logic response, memory writing, holding and non-destructive reading. The memory writing is done by amplifying the input node voltage to a higher level when the node was logically high and to a lower one when it was logically low just before the writing operation. The data retention was also measured. The retained high and low voltages were almost unchanged for 1.2 days. The idea of this FeCMOS will enhance flexibility of circuit designing by merging logic and memory functions. This work was partially supported by NEDO.

  19. Nonvolatile flip-flop based on pseudo-spin-transistor architecture and its nonvolatile power-gating applications for low-power CMOS logic

    NASA Astrophysics Data System (ADS)

    Yamamoto, Shuu'ichirou; Shuto, Yusuke; Sugahara, Satoshi

    2013-07-01

    We computationally analyzed performance and power-gating (PG) ability of a new nonvolatile delay flip-flop (NV-DFF) based on pseudo-spin-MOSFET (PS-MOSFET) architecture using spin-transfer-torque magnetic tunnel junctions (STT-MTJs). The high-performance energy-efficient PG operations of the NV-DFF can be achieved owing to its cell structure employing PS-MOSFETs that can electrically separate the STT-MTJs from the ordinary DFF part of the NV-DFF. This separation also makes it possible that the break-even time (BET) of the NV-DFF is designed by the size of the PS-MOSFETs without performance degradation of the normal DFF operations. The effect of the area occupation ratio of the NV-DFFs to a CMOS logic system on the BET was also analyzed. Although the optimized BET was varied depending on the area occupation ratio, energy-efficient fine-grained PG with a BET of several sub-microseconds was revealed to be achieved. We also proposed microprocessors and system-on-chip (SoC) devices using nonvolatile hierarchical-memory systems wherein NV-DFF and nonvolatile static random access memory (NV-SRAM) circuits are used as fundamental building blocks. Contribution to the Topical Issue “International Semiconductor Conference Dresden-Grenoble - ISCDG 2012”, Edited by Gérard Ghibaudo, Francis Balestra and Simon Deleonibus.

  20. Nonvolatile programmable neural network synaptic array

    NASA Technical Reports Server (NTRS)

    Tawel, Raoul (Inventor)

    1994-01-01

    A floating-gate metal oxide semiconductor (MOS) transistor is implemented for use as a nonvolatile analog storage element of a synaptic cell used to implement an array of processing synaptic cells. These cells are based on a four-quadrant analog multiplier requiring both X and Y differential inputs, where one Y input is UV programmable. These nonvolatile synaptic cells are disclosed fully connected in a 32 x 32 synaptic cell array using standard very large scale integration (VLSI) complementary MOS (CMOS) technology.

  1. Silicon and germanium nanocrystals: properties and characterization

    PubMed Central

    Carvalho, Alexandra; Coutinho, José

    2014-01-01

    Summary Group-IV nanocrystals have emerged as a promising group of materials that extends the realm of application of bulk diamond, silicon, germanium and related materials beyond their traditional boundaries. Over the last two decades of research, their potential for application in areas such as optoelectronic applications and memory devices has been progressively unraveled. Nevertheless, new challenges with no parallel in the respective bulk material counterparts have arisen. In this review, we consider what has been achieved and what are the current limitations with regard to growth, characterization and modeling of silicon and germanium nanocrystals and related materials. PMID:25383290

  2. Pulsed supersonic expansion of nonvolatile solids

    SciTech Connect

    Christen, Wolfgang; Geggier, Stephanie; Grigorenko, Svitlana; Rademann, Klaus

    2004-11-01

    A compact apparatus for transferring nonvolatile particles into the gas phase and depositing them on a solid surface has been built and tested successfully. As initial experiment, solid caffeine with a vanishingly low vapor pressure has been dissolved in supercritical carbon dioxide, expanded into vacuum using a pulsed, supersonic molecular beam, and detected using a simple residual gas analyzer.

  3. Surface chemical modification of nanocrystals

    DOEpatents

    Helms, Brett Anthony; Milliron, Delia Jane; Rosen, Evelyn Louise; Buonsanti, Raffaella; Llordes, Anna

    2017-03-14

    Nanocrystals comprising organic ligands at surfaces of the plurality of nanocrystals are provided. The organic ligands are removed from the surfaces of the nanocrystals using a solution comprising a trialkyloxonium salt in a polar aprotic solvent. The removal of the organic ligands causes the nanocrystals to become naked nanocrystals with cationic surfaces.

  4. Nonvolatile organic compounds in treated waters.

    PubMed Central

    Watts, C D; Crathorne, B; Fielding, M; Killops, S D

    1982-01-01

    Over the past decade much information has been published on the analysis of organics extracted from treated water. Certain of these organics have been shown to be by-products of the chlorination disinfection process and to possess harmful effects at high concentrations. This has resulted in increased interest in alternative disinfection processes, particularly ozonation. The data on organics had been largely obtained by using gas chromatography-mass spectrometry, which is only capable of analyzing, at best, 20% of the organics present in treated water. Research in key areas such as mutagenicity testing of water and characterization of chlorination and ozonation by-products has emphasized the need for techniques suitable for analysis of the remaining nonvolatile organics. Several methods for the isolation of nonvolatile organics have been evaluated and, of these, freeze-drying followed by methanol extraction appears the most suitable. Reverse-phase HPLC was used for separation of the methanol extract, but increased resolution for separation of the complex mixtures present is desirable. In this context, high resolution size exclusion chromatography shows promise. Characterization of separated nonvolatiles is possible by the application of state-of-the-art mass spectrometric techniques. Results obtained by these techniques have shown that the nonvolatile organic fraction of chlorinated drinking water consists of many discrete compounds. Among these, some of the chlorinated compounds are almost certainly by-products of disinfection. Studies of the by-products of ozonation of fulvic and humic acids isolated from river waters have indicated a similar proportion of nonvolatile organics. Further, ozonation can result in the release of compounds that are trapped in the macromolecules. PMID:6759110

  5. Multilevel non-volatile data storage utilizing common current hysteresis of networked single walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Hwang, Ihn; Wang, Wei; Hwang, Sun Kak; Cho, Sung Hwan; Kim, Kang Lib; Jeong, Beomjin; Huh, June; Park, Cheolmin

    2016-05-01

    The characteristic source-drain current hysteresis frequently observed in field-effect transistors with networked single walled carbon-nanotube (NSWNT) channels is problematic for the reliable switching and sensing performance of devices. But the two distinct current states of the hysteresis curve at a zero gate voltage can be useful for memory applications. In this work, we demonstrate a novel non-volatile transistor memory with solution-processed NSWNTs which are suitable for multilevel data programming and reading. A polymer passivation layer with a small amount of water employed on the top of the NSWNT channel serves as an efficient gate voltage dependent charge trapping and de-trapping site. A systematic investigation evidences that the water mixed in a polymer passivation solution is critical for reliable non-volatile memory operation. The optimized device is air-stable and temperature-resistive up to 80 °C and exhibits excellent non-volatile memory performance with an on/off current ratio greater than 104, a switching time less than 100 ms, data retention longer than 4000 s, and write/read endurance over 100 cycles. Furthermore, the gate voltage dependent charge injection mediated by water in the passivation layer allowed for multilevel operation of our memory in which 4 distinct current states were programmed repetitively and preserved over a long time period.The characteristic source-drain current hysteresis frequently observed in field-effect transistors with networked single walled carbon-nanotube (NSWNT) channels is problematic for the reliable switching and sensing performance of devices. But the two distinct current states of the hysteresis curve at a zero gate voltage can be useful for memory applications. In this work, we demonstrate a novel non-volatile transistor memory with solution-processed NSWNTs which are suitable for multilevel data programming and reading. A polymer passivation layer with a small amount of water employed on the top of the

  6. Integrated semiconductor-magnetic random access memory system

    NASA Technical Reports Server (NTRS)

    Katti, Romney R. (Inventor); Blaes, Brent R. (Inventor)

    2001-01-01

    The present disclosure describes a non-volatile magnetic random access memory (RAM) system having a semiconductor control circuit and a magnetic array element. The integrated magnetic RAM system uses CMOS control circuit to read and write data magnetoresistively. The system provides a fast access, non-volatile, radiation hard, high density RAM for high speed computing.

  7. Memories.

    ERIC Educational Resources Information Center

    Brand, Judith, Ed.

    1998-01-01

    This theme issue of the journal "Exploring" covers the topic of "memories" and describes an exhibition at San Francisco's Exploratorium that ran from May 22, 1998 through January 1999 and that contained over 40 hands-on exhibits, demonstrations, artworks, images, sounds, smells, and tastes that demonstrated and depicted the biological,…

  8. Nanocrystal doped matrixes

    DOEpatents

    Parce, J. Wallace; Bernatis, Paul; Dubrow, Robert; Freeman, William P.; Gamoras, Joel; Kan, Shihai; Meisel, Andreas; Qian, Baixin; Whiteford, Jeffery A.; Ziebarth, Jonathan

    2010-01-12

    Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.

  9. Nonvolatile Bio-Memristor Fabricated with Egg Albumen Film

    PubMed Central

    Chen, Ying-Chih; Yu, Hsin-Chieh; Huang, Chun-Yuan; Chung, Wen-Lin; Wu, San-Lein; Su, Yan-Kuin

    2015-01-01

    This study demonstrates the fabrication and characterization of chicken egg albumen-based bio-memristors. By introducing egg albumen as an insulator to fabricate memristor devices comprising a metal/insulator/metal sandwich structure, significant bipolar resistive switching behavior can be observed. The 1/f noise characteristics of the albumen devices were measured, and results suggested that their memory behavior results from the formation and rupture of conductive filaments. Oxygen diffusion and electrochemical redox reaction of metal ions under a sufficiently large electric field are the principal physical mechanisms of the formation and rupture of conductive filaments; these mechanisms were observed by analysis of the time-of-flight secondary ion mass spectrometry (TOF-SIMS) and resistance–temperature (R–T) measurement results. The switching property of the devices remarkably improved by heat-denaturation of proteins; reliable switching endurance of over 500 cycles accompanied by an on/off current ratio (Ion/off) of higher than 103 were also observed. Both resistance states could be maintained for a suitably long time (>104 s). Taking the results together, the present study reveals for the first time that chicken egg albumen is a promising material for nonvolatile memory applications. PMID:25950812

  10. Nonvolatile Bio-Memristor Fabricated with Egg Albumen Film

    NASA Astrophysics Data System (ADS)

    Chen, Ying-Chih; Yu, Hsin-Chieh; Huang, Chun-Yuan; Chung, Wen-Lin; Wu, San-Lein; Su, Yan-Kuin

    2015-05-01

    This study demonstrates the fabrication and characterization of chicken egg albumen-based bio-memristors. By introducing egg albumen as an insulator to fabricate memristor devices comprising a metal/insulator/metal sandwich structure, significant bipolar resistive switching behavior can be observed. The 1/f noise characteristics of the albumen devices were measured, and results suggested that their memory behavior results from the formation and rupture of conductive filaments. Oxygen diffusion and electrochemical redox reaction of metal ions under a sufficiently large electric field are the principal physical mechanisms of the formation and rupture of conductive filaments; these mechanisms were observed by analysis of the time-of-flight secondary ion mass spectrometry (TOF-SIMS) and resistance-temperature (R-T) measurement results. The switching property of the devices remarkably improved by heat-denaturation of proteins; reliable switching endurance of over 500 cycles accompanied by an on/off current ratio (Ion/off) of higher than 103 were also observed. Both resistance states could be maintained for a suitably long time (>104 s). Taking the results together, the present study reveals for the first time that chicken egg albumen is a promising material for nonvolatile memory applications.

  11. Architectural Techniques For Managing Non-volatile Caches

    SciTech Connect

    Mittal, Sparsh

    2013-01-01

    As chip power dissipation becomes a critical challenge in scaling processor performance, computer architects are forced to fundamentally rethink the design of modern processors and hence, the chip-design industry is now at a major inflection point in its hardware roadmap. The high leakage power and low density of SRAM poses serious obstacles in its use for designing large on-chip caches and for this reason, researchers are exploring non-volatile memory (NVM) devices, such as spin torque transfer RAM, phase change RAM and resistive RAM. However, since NVMs are not strictly superior to SRAM, effective architectural techniques are required for making them a universal memory solution. This book discusses techniques for designing processor caches using NVM devices. It presents algorithms and architectures for improving their energy efficiency, performance and lifetime. It also provides both qualitative and quantitative evaluation to help the reader gain insights and motivate them to explore further. This book will be highly useful for beginners as well as veterans in computer architecture, chip designers, product managers and technical marketing professionals.

  12. Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode.

    PubMed

    Liu, Qi; Long, Shibing; Lv, Hangbing; Wang, Wei; Niu, Jiebin; Huo, Zongliang; Chen, Junning; Liu, Ming

    2010-10-26

    Resistive memory (ReRAM) based on a solid-electrolyte insulator is a promising nanoscale device and has great potentials in nonvolatile memory, analog circuits, and neuromorphic applications. The underlying resistive switching (RS) mechanism of ReRAM is suggested to be the formation and rupture of nanoscale conductive filament (CF) inside the solid-electrolyte layer. However, the random nature of the nucleation and growth of the CF makes their formation difficult to control, which is a major obstacle for ReRAM performance improvement. Here, we report a novel approach to resolve this challenge by adopting a metal nanocrystal (NC) covered bottom electrode (BE) to replace the conventional ReRAM BE. As a demonstration vehicle, a Ag/ZrO(2)/Cu NC/Pt structure is prepared and the Cu NC covered Pt BE can control CF nucleation and growth to provide superior uniformity of RS properties. The controllable growth of nanoscale CF bridges between Cu NC and Ag top electrode has been vividly observed by transmission electron microscopy (TEM). On the basis of energy-dispersive X-ray spectroscopy (EDS) and elemental mapping analyses, we further confirm that the chemical contents of the CF are mainly Ag atoms. These testing/metrology results are consistent with the simulation results of electric-field distribution, showing that the electric field will enhance and concentrate on the NC sites and control location and orientation of Ag CFs.

  13. Biomineralization: Nanocrystals by design

    NASA Astrophysics Data System (ADS)

    Shang, Li; Nienhaus, Gerd Ulrich

    2015-10-01

    Nanocrystals with precisely defined structures offer promise as components of advanced materials yet they are challenging to create. Now, a nanocrystal made up of seven cadmium and twelve chloride ions has been synthesized via a biotemplating approach that uses a de novo designed protein.

  14. Silicon Nanocrystal Laser

    SciTech Connect

    Yu, J

    2005-03-09

    The purpose of this feasibility study project was to attempt to demonstrate the silicon-nanocrystal-based laser. Such a silicon laser (made using conventional silicon-manufacturing technologies) would provide the crucial missing link that would enable a completely-silicon-based photonic system. We prepared thin layers of silicon nanocrystal material by ion-implanting Si in fused silica substrates, followed by a high temperature anneal process. These Si nanocrystals produced intense photoluminescence when optically pumped with ultraviolet light. Laser structures based on Fabry-Perot cavity and distributed feedback (DFB) designs were fabricated using the Si nanocrystals as the ''lasing'' medium. We optically pumped the samples with CW lasers at 413nm wavelength to quickly assess the feasibility of making lasers out of the Nanocrystal Si material and to verify the gain coefficients reported by other research groups.

  15. Reconfigurable Electronics and Non-Volatile Memory Research

    DTIC Science & Technology

    2011-10-14

    Electron Paramagnetic Resonance ( EPR ) spectroscopy , method and results (a) Method: The EPR spectra of chalcogenide glasses were recorded on...fabricated and tested Ag -containing chalcogenide devices that exhibit memristor 300x10 -6 200 100 0 -100 -200 T o p E le c tr o d e C u rr e n t (A ) -0.6...

  16. Investigations of Photovoltaic Ferroelectric-Semiconductor Nonvolatile Memory.

    DTIC Science & Technology

    1981-03-01

    HEWLETT-PACKARD BOX 3310 100 MARKET ST APT 1 3404 EAST HARMONY RD2U ATTN J. M. KIRSCH, MTS ATTN R. SCHAEFER ATTN L. W. JAMES , MTS FULLERTON, CA 92633...CRYOGENICS INC MARYLAND ACADEMY SCIENCE REnFORD, MA 01730 ATTN W. N. LAWLESS 601 LIGHT ST WESTERVILLE, ON 43081 ATTN S. A. KARON , DIR EXN MONACO ENTERPRISES

  17. Tunable ultrathin membranes with nonvolatile pore shape memory.

    PubMed

    Kuroki, Hidenori; Islam, Crescent; Tokarev, Igor; Hu, Heng; Liu, Guojun; Minko, Sergiy

    2015-05-20

    The concept of a responsive nanoporous thin-film gel membranes whose pores could be tuned to a desired size by a specific "molecular signal" and whose pore geometry becomes "memorized" by the gel is reported. The ∼100 nm thick membranes were prepared by dip-coating from a solution mixture of a random copolymer comprising responsive and photo-cross-linkable units and monodisperse latex nanoparticles used as a sacrificial colloidal template. After stabilization of the films by photo-cross-linking the latex template was removed, yielding nanoporous structures with a narrow pore size distribution and a high porosity. The thin-film membranes could be transferred onto porous supports to serve as tunable size-selective barriers in various colloids separation applications. The pore dimensions and hence the membrane's colloidal-particle-size cutoff were reversibly regulated by swelling-shrinking of the polymer network with a specially selected low-molar-mass compound. The attained pore shape was "memorized" in aqueous media and "erased" by treatment in special solvents reverting the membrane to the original state.

  18. PEMOCVD Ferroelectric Nonvolatile Radiation-Hard Memories. Phase 1

    DTIC Science & Technology

    1990-11-30

    can be done to measure the effects o’ .’ asma generator design and gas additives or alternate discharge gases. In particular, ways to intro.. ce...the joint effort involving Radiant Technologies, University of New Mexico , and Sandia National Laboratories. This effort, funded by the State of New... Mexico , will exclusively develop new precursors for CVD of PLZT films. However, sample compounds will be used in the PEMOCVD process development done at

  19. Ferroelectric memory based on nanostructures

    PubMed Central

    2012-01-01

    In the past decades, ferroelectric materials have attracted wide attention due to their applications in nonvolatile memory devices (NVMDs) rendered by the electrically switchable spontaneous polarizations. Furthermore, the combination of ferroelectric and nanomaterials opens a new route to fabricating a nanoscale memory device with ultrahigh memory integration, which greatly eases the ever increasing scaling and economic challenges encountered in the traditional semiconductor industry. In this review, we summarize the recent development of the nonvolatile ferroelectric field effect transistor (FeFET) memory devices based on nanostructures. The operating principles of FeFET are introduced first, followed by the discussion of the real FeFET memory nanodevices based on oxide nanowires, nanoparticles, semiconductor nanotetrapods, carbon nanotubes, and graphene. Finally, we present the opportunities and challenges in nanomemory devices and our views on the future prospects of NVMDs. PMID:22655750

  20. Measurement of nonvolatile particle number size distribution

    NASA Astrophysics Data System (ADS)

    Gkatzelis, G. I.; Papanastasiou, D. K.; Florou, K.; Kaltsonoudis, C.; Louvaris, E.; Pandis, S. N.

    2016-01-01

    An experimental methodology was developed to measure the nonvolatile particle number concentration using a thermodenuder (TD). The TD was coupled with a high-resolution time-of-flight aerosol mass spectrometer, measuring the chemical composition and mass size distribution of the submicrometer aerosol and a scanning mobility particle sizer (SMPS) that provided the number size distribution of the aerosol in the range from 10 to 500 nm. The method was evaluated with a set of smog chamber experiments and achieved almost complete evaporation (> 98 %) of secondary organic as well as freshly nucleated particles, using a TD temperature of 400 °C and a centerline residence time of 15 s. This experimental approach was applied in a winter field campaign in Athens and provided a direct measurement of number concentration and size distribution for particles emitted from major pollution sources. During periods in which the contribution of biomass burning sources was dominant, more than 80 % of particle number concentration remained after passing through the thermodenuder, suggesting that nearly all biomass burning particles had a nonvolatile core. These remaining particles consisted mostly of black carbon (60 % mass contribution) and organic aerosol (OA; 40 %). Organics that had not evaporated through the TD were mostly biomass burning OA (BBOA) and oxygenated OA (OOA) as determined from AMS source apportionment analysis. For periods during which traffic contribution was dominant 50-60 % of the particles had a nonvolatile core while the rest evaporated at 400 °C. The remaining particle mass consisted mostly of black carbon with an 80 % contribution, while OA was responsible for another 15-20 %. Organics were mostly hydrocarbon-like OA (HOA) and OOA. These results suggest that even at 400 °C some fraction of the OA does not evaporate from particles emitted from common combustion processes, such as biomass burning and car engines, indicating that a fraction of this type of OA

  1. General observation of the memory effect in metal-insulator-ITO structures due to indium diffusion

    NASA Astrophysics Data System (ADS)

    Wu, Xiaojing; Xu, Huihua; Wang, Yu; Rogach, Andrey L.; Shen, Yingzhong; Zhao, Ni

    2015-07-01

    Resistive random access memory (RRAM) devices based on metal oxides, organic molecules and inorganic nanocrystals (NCs) have been studied extensively in recent years. Different memory switching mechanisms have been proposed and shown to be closely related to the device architectures. In this work, we demonstrate that the use of an ITO/active layer/InGa structure can yield nonvolatile resistive memory behavior in a variety of active materials, including polymers, organic small molecules, and colloidal NCs. Through the electrode material and thickness-dependent study, we show that the ON state of the devices is associated with filamentary conduction induced by indium diffusion from the ITO electrode, occurring mostly within around 40-50 nm from the ITO/active layer interface. A negative differential resistance (NDR) regime is observed during transition from the ON to OFF state, and is explained by the space charge limited current (SCLC) effect due to hole injection at the ITO/active layer interface. Our study reveals the impact of indium diffusion at the ITO/active layer interface, an important factor that should be taken into consideration when designing thin printed RRAM devices.

  2. Controlled assembly and electronics in semiconductor nanocrystal-based devices

    NASA Astrophysics Data System (ADS)

    Drndic, Marija

    2006-03-01

    I will discuss the assembly of semiconductor nanocrystals (CdSe and PbSe) into electronic devices and the basic mechanisms of charge transport in nanocrystal arrays [1-4]. Spherical CdSe nanocrystals show robust memory effects that can be exploited for memory applications [1]. Nanocrystal memory can be erased electrically or optically and is rewritable. In PbSe nanocrystal arrays, as the interdot coupling is increased, the system evolves from an insulating regime dominated by Coulomb blockade to a semiconducting regime, where hopping conduction is the dominant transport mechanism [2]. Two-dimensional CdSe nanorod arrays show striking and anomalous transport properties, including strong and reproducible non-linearities and current oscillations with dc-voltage [4]. I will also discuss imaging of the charge transport in nanocrystal-based electronic devices. Nanocrystal arrays were investigated using electrostatic force microscopy (EFM) and transmission electron microscopy (TEM) [3]. Changes in lattice and transport properties upon annealing in vacuum were revealed. Local charge transport was directly imaged by EFM and correlated to nanopatterns observed with TEM. This work shows how charge transport in complex nanocrystal networks can be identified with nm resolution [3]. This work was supported by the ONR grant N000140410489, the NSF grants DMR-0449553 and MRSEC DMR00-79909, and the ACS PRF grant 41256-G10. References:1) Fischbein M. D. and Drndic M., ``CdSe nanocrystal quantum-dot memory,'' Applied Physics Letters, 86 (19), 193106, 2005.2) H. E. Romero and Drndic M., ``Coulomb blockade and hopping conduction in PbSe quantum dots,'' Physical Review Letters 95, 156801, 2005.3) Hu Z., Fischbein M. D. and Drndic M., ``Local charge transport in two-dimensional PbSe nanocrystal arrays studied by electrostatic force microscopy",'' Nano Letters 5 (7), 1463, 2005.4) Romero H.E., Calusine G. and Drndic M., ``Current oscillations, switching and hysteresis in CdSe nanorod

  3. Nanocrystal diffusion doping.

    PubMed

    Vlaskin, Vladimir A; Barrows, Charles J; Erickson, Christian S; Gamelin, Daniel R

    2013-09-25

    A diffusion-based synthesis of doped colloidal semiconductor nanocrystals is demonstrated. This approach involves thermodynamically controlled addition of both impurity cations and host anions to preformed seed nanocrystals under equilibrium conditions, rather than kinetically controlled doping during growth. This chemistry allows thermodynamic crystal compositions to be prepared without sacrificing other kinetically trapped properties such as shape, size, or crystallographic phase. This doping chemistry thus shares some similarities with cation-exchange reactions, but proceeds without the loss of host cations and excels at the introduction of relatively unreactive impurity ions that have not been previously accessible using cation exchange. Specifically, we demonstrate the preparation of Cd(1-x)Mn(x)Se (0 ≤ x ≤ ∼0.2) nanocrystals with narrow size distribution, unprecedentedly high Mn(2+) content, and very large magneto-optical effects by diffusion of Mn(2+) into seed CdSe nanocrystals grown by hot injection. Controlling the solution and lattice chemical potentials of Cd(2+) and Mn(2+) allows Mn(2+) diffusion into the internal volumes of the CdSe nanocrystals with negligible Ostwald ripening, while retaining the crystallographic phase (wurtzite or zinc blende), shape anisotropy, and ensemble size uniformity of the seed nanocrystals. Experimental results for diffusion doping of other nanocrystals with other cations are also presented that indicate this method may be generalized, providing access to a variety of new doped semiconductor nanostructures not previously attainable by kinetic routes or cation exchange.

  4. Nonvolatile data storage using mechanical force-induced polarization switching in ferroelectric polymer

    SciTech Connect

    Chen, Xin; Tang, Xin; Chen, Xiang-Zhong; Chen, Yu-Lei; Shen, Qun-Dong; Guo, Xu; Ge, Hai-Xiong

    2015-01-26

    Ferroelectric polymers offer the promise of low-cost and flexible electronic products. They are attractive for information storage due to their spontaneous polarization which is usually switched by electric field. Here, we demonstrate that electrical signals can be readily written on ultra-thin ferroelectric polymer films by strain gradient-induced polarization switching (flexoelectric effect). A force with magnitude as small as 64nN is enough to induce highly localized (40 nm feature size) change in the polarization states. The methodology is capable of realizing nonvolatile memory devices with miniaturized cell size and storage density of tens to hundreds Gbit per square inch.

  5. On Ultrasmall Nanocrystals

    PubMed Central

    McBride, James R.; Dukes, Albert D.; Schreuder, Michael A.; Rosenthal, Sandra J.

    2010-01-01

    Ultrasmall nanocrystals are a growing sub-class of traditional nanocrystals that exhibit new properties at diameters typically below 2 nm. In this review, we define what constitutes an ultrasmall nanoparticle while distinguishing between ultrasmall and magic-size nanoparticles. After a brief overview of ultrasmall nanoparticles, including ultrasmall gold clusters, our recent work is presented covering the optical properties, structure, and application of ultrasmall CdSe nanocrystals. This unique material has potential application in solid state lighting due to its balanced white emission. This section is followed by a discussion on the blurring boundary between what can be considered a nanoparticle and a molecule. PMID:21132106

  6. Nanocrystal-Powered Nanomotor

    SciTech Connect

    Regan, B.C.; Aloni, S.; Jensen, K.; Ritchie, R.O.; Zettl, A.

    2005-07-05

    We have constructed and operated a nanoscale linear motorpowered by a single metal nanocrystal ram sandwiched between mechanicallever arms. Low-level electrical voltages applied to the carbon nanotubelever arms cause the nanocrystal to grow or shrink in a controlledmanner. The length of the ram is adjustable from 0 to more than 150 nm,with extension speeds exceeding 1900 nm/s. The thermodynamic principlesgoverning motor operation resemble those driving frost heave, a naturalsolid-state linear motor.

  7. Nanocrystal dispersed amorphous alloys

    NASA Technical Reports Server (NTRS)

    Perepezko, John H. (Inventor); Allen, Donald R. (Inventor); Foley, James C. (Inventor)

    2001-01-01

    Compositions and methods for obtaining nanocrystal dispersed amorphous alloys are described. A composition includes an amorphous matrix forming element (e.g., Al or Fe); at least one transition metal element; and at least one crystallizing agent that is insoluble in the resulting amorphous matrix. During devitrification, the crystallizing agent causes the formation of a high density nanocrystal dispersion. The compositions and methods provide advantages in that materials with superior properties are provided.

  8. Nanocrystals for electronics.

    PubMed

    Panthani, Matthew G; Korgel, Brian A

    2012-01-01

    Semiconductor nanocrystals are promising materials for low-cost large-area electronic device fabrication. They can be synthesized with a wide variety of chemical compositions and size-tunable optical and electronic properties as well as dispersed in solvents for room-temperature deposition using various types of printing processes. This review addresses research progress in large-area electronic device applications using nanocrystal-based electrically active thin films, including thin-film transistors, light-emitting diodes, photovoltaics, and thermoelectrics.

  9. Reduced graphene oxide based flexible organic charge trap memory devices

    NASA Astrophysics Data System (ADS)

    Rani, Adila; Song, Ji-Min; Jung Lee, Mi; Lee, Jang-Sik

    2012-12-01

    A nonvolatile organic transistor memory device was developed using layer-by-layer assembly of 3-aminopropyltriethoxysilane (APTES) and solution-processed, reduced graphene oxide (rGO) as the charge trapping layer on flexible substrates. Reduction of graphene oxide and successful adsorption of the rGO on APTES-covered substrates were confirmed. The organic memory devices based on rGO exhibited reliable programmable memory operations, confirmed by program/erase operations, data retention, and endurance properties. These methods can potentially play a significant role in the fabrication of next-generation flexible nonvolatile memory devices based on graphene materials.

  10. Skin-Inspired Haptic Memory Arrays with an Electrically Reconfigurable Architecture.

    PubMed

    Zhu, Bowen; Wang, Hong; Liu, Yaqing; Qi, Dianpeng; Liu, Zhiyuan; Wang, Hua; Yu, Jiancan; Sherburne, Matthew; Wang, Zhaohui; Chen, Xiaodong

    2016-02-24

    Skin-inspired haptic-memory devices, which can retain pressure information after the removel of external pressure by virtue of the nonvolatile nature of the memory devices, are achieved. The rise of haptic-memory devices will allow for mimicry of human sensory memory, opening new avenues for the design of next-generation high-performance sensing devices and systems.

  11. Three dimensional magnetic abacus memory

    PubMed Central

    Zhang, ShiLei; Zhang, JingYan; Baker, Alexander A.; Wang, ShouGuo; Yu, GuangHua; Hesjedal, Thorsten

    2014-01-01

    Stacking nonvolatile memory cells into a three-dimensional matrix represents a powerful solution for the future of magnetic memory. However, it is technologically challenging to access the data in the storage medium if large numbers of bits are stacked on top of each other. Here we introduce a new type of multilevel, nonvolatile magnetic memory concept, the magnetic abacus. Instead of storing information in individual magnetic layers, thereby having to read out each magnetic layer separately, the magnetic abacus adopts a new encoding scheme. It is inspired by the idea of second quantisation, dealing with the memory state of the entire stack simultaneously. Direct read operations are implemented by measuring the artificially engineered ‘quantised' Hall voltage, each representing a count of the spin-up and spin-down layers in the stack. This new memory system further allows for both flexible scaling of the system and fast communication among cells. The magnetic abacus provides a promising approach for future nonvolatile 3D magnetic random access memory. PMID:25146338

  12. Nanocrystal Solar Cells

    SciTech Connect

    Gur, Ilan

    2006-01-01

    This dissertation presents the results of a research agenda aimed at improving integration and stability in nanocrystal-based solar cells through advances in active materials and device architectures. The introduction of 3-dimensional nanocrystals illustrates the potential for improving transport and percolation in hybrid solar cells and enables novel fabrication methods for optimizing integration in these systems. Fabricating cells by sequential deposition allows for solution-based assembly of hybrid composites with controlled and well-characterized dispersion and electrode contact. Hyperbranched nanocrystals emerge as a nearly ideal building block for hybrid cells, allowing the controlled morphologies targeted by templated approaches to be achieved in an easily fabricated solution-cast device. In addition to offering practical benefits to device processing, these approaches offer fundamental insight into the operation of hybrid solar cells, shedding light on key phenomena such as the roles of electrode-contact and percolation behavior in these cells. Finally, all-inorganic nanocrystal solar cells are presented as a wholly new cell concept, illustrating that donor-acceptor charge transfer and directed carrier diffusion can be utilized in a system with no organic components, and that nanocrystals may act as building blocks for efficient, stable, and low-cost thin-film solar cells.

  13. Nanoporous silicon oxide memory.

    PubMed

    Wang, Gunuk; Yang, Yang; Lee, Jae-Hwang; Abramova, Vera; Fei, Huilong; Ruan, Gedeng; Thomas, Edwin L; Tour, James M

    2014-08-13

    Oxide-based two-terminal resistive random access memory (RRAM) is considered one of the most promising candidates for next-generation nonvolatile memory. We introduce here a new RRAM memory structure employing a nanoporous (NP) silicon oxide (SiOx) material which enables unipolar switching through its internal vertical nanogap. Through the control of the stochastic filament formation at low voltage, the NP SiOx memory exhibited an extremely low electroforming voltage (∼ 1.6 V) and outstanding performance metrics. These include multibit storage ability (up to 9-bits), a high ON-OFF ratio (up to 10(7) A), a long high-temperature lifetime (≥ 10(4) s at 100 °C), excellent cycling endurance (≥ 10(5)), sub-50 ns switching speeds, and low power consumption (∼ 6 × 10(-5) W/bit). Also provided is the room temperature processability for versatile fabrication without any compliance current being needed during electroforming or switching operations. Taken together, these metrics in NP SiOx RRAM provide a route toward easily accessed nonvolatile memory applications.

  14. From Secure Memories to Smart Card Security

    NASA Astrophysics Data System (ADS)

    Handschuh, Helena; Trichina, Elena

    Non-volatile memory is essential in most embedded security applications. It will store the key and other sensitive materials for cryptographic and security applications. In this chapter, first an overview is given of current flash memory architectures. Next the standard security features which form the basis of so-called secure memories are described in more detail. Smart cards are a typical embedded application that is very vulnerable to attacks and that at the same time has a high need for secure non-volatile memory. In the next part of this chapter, the secure memories of so-called flash-based high-density smart cards are described. It is followed by a detailed analysis of what the new security challenges for such objects are.

  15. Substitutional doping in nanocrystal superlattices

    NASA Astrophysics Data System (ADS)

    Cargnello, Matteo; Johnston-Peck, Aaron C.; Diroll, Benjamin T.; Wong, Eric; Datta, Bianca; Damodhar, Divij; Doan-Nguyen, Vicky V. T.; Herzing, Andrew A.; Kagan, Cherie R.; Murray, Christopher B.

    2015-08-01

    Doping is a process in which atomic impurities are intentionally added to a host material to modify its properties. It has had a revolutionary impact in altering or introducing electronic, magnetic, luminescent, and catalytic properties for several applications, for example in semiconductors. Here we explore and demonstrate the extension of the concept of substitutional atomic doping to nanometre-scale crystal doping, in which one nanocrystal is used to replace another to form doped self-assembled superlattices. Towards this goal, we show that gold nanocrystals act as substitutional dopants in superlattices of cadmium selenide or lead selenide nanocrystals when the size of the gold nanocrystal is very close to that of the host. The gold nanocrystals occupy random positions in the superlattice and their density is readily and widely controllable, analogous to the case of atomic doping, but here through nanocrystal self-assembly. We also show that the electronic properties of the superlattices are highly tunable and strongly affected by the presence and density of the gold nanocrystal dopants. The conductivity of lead selenide films, for example, can be manipulated over at least six orders of magnitude by the addition of gold nanocrystals and is explained by a percolation model. As this process relies on the self-assembly of uniform nanocrystals, it can be generally applied to assemble a wide variety of nanocrystal-doped structures for electronic, optical, magnetic, and catalytic materials.

  16. Oxide Nanocrystal Model Catalysts.

    PubMed

    Huang, Weixin

    2016-03-15

    Model catalysts with uniform and well-defined surface structures have been extensively employed to explore structure-property relationships of powder catalysts. Traditional oxide model catalysts are based on oxide single crystals and single crystal thin films, and the surface chemistry and catalysis are studied under ultrahigh-vacuum conditions. However, the acquired fundamental understandings often suffer from the "materials gap" and "pressure gap" when they are extended to the real world of powder catalysts working at atmospheric or higher pressures. Recent advances in colloidal synthesis have realized controlled synthesis of catalytic oxide nanocrystals with uniform and well-defined morphologies. These oxide nanocrystals consist of a novel type of oxide model catalyst whose surface chemistry and catalysis can be studied under the same conditions as working oxide catalysts. In this Account, the emerging concept of oxide nanocrystal model catalysts is demonstrated using our investigations of surface chemistry and catalysis of uniform and well-defined cuprous oxide nanocrystals and ceria nanocrystals. Cu2O cubes enclosed with the {100} crystal planes, Cu2O octahedra enclosed with the {111} crystal planes, and Cu2O rhombic dodecahedra enclosed with the {110} crystal planes exhibit distinct morphology-dependent surface reactivities and catalytic properties that can be well correlated with the surface compositions and structures of exposed crystal planes. Among these types of Cu2O nanocrystals, the octahedra are most reactive and catalytically active due to the presence of coordination-unsaturated (1-fold-coordinated) Cu on the exposed {111} crystal planes. The crystal-plane-controlled surface restructuring and catalytic activity of Cu2O nanocrystals were observed in CO oxidation with excess oxygen. In the propylene oxidation reaction with O2, 1-fold-coordinated Cu on Cu2O(111), 3-fold-coordinated O on Cu2O(110), and 2-fold-coordinated O on Cu2O(100) were identified

  17. Magnetic vortex racetrack memory

    NASA Astrophysics Data System (ADS)

    Geng, Liwei D.; Jin, Yongmei M.

    2017-02-01

    We report a new type of racetrack memory based on current-controlled movement of magnetic vortices in magnetic nanowires with rectangular cross-section and weak perpendicular anisotropy. Data are stored through the core polarity of vortices and each vortex carries a data bit. Besides high density, non-volatility, fast data access, and low power as offered by domain wall racetrack memory, magnetic vortex racetrack memory has additional advantages of no need for constrictions to define data bits, changeable information density, adjustable current magnitude for data propagation, and versatile means of ultrafast vortex core switching. By using micromagnetic simulations, current-controlled motion of magnetic vortices in cobalt nanowire is demonstrated for racetrack memory applications.

  18. Sorting fluorescent nanocrystals with DNA

    SciTech Connect

    Gerion, Daniele; Parak, Wolfgang J.; Williams, Shara C.; Zanchet, Daniela; Micheel, Christine M.; Alivisatos, A. Paul

    2001-12-10

    Semiconductor nanocrystals with narrow and tunable fluorescence are covalently linked to oligonucleotides. These biocompounds retain the properties of both nanocrystals and DNA. Therefore, different sequences of DNA can be coded with nanocrystals and still preserve their ability to hybridize to their complements. We report the case where four different sequences of DNA are linked to four nanocrystal samples having different colors of emission in the range of 530-640 nm. When the DNA-nanocrystal conjugates are mixed together, it is possible to sort each type of nanoparticle using hybridization on a defined micrometer -size surface containing the complementary oligonucleotide. Detection of sorting requires only a single excitation source and an epifluorescence microscope. The possibility of directing fluorescent nanocrystals towards specific biological targets and detecting them, combined with their superior photo-stability compared to organic dyes, opens the way to improved biolabeling experiments, such as gene mapping on a nanometer scale or multicolor microarray analysis.

  19. Chemical design of nanocrystal solids.

    PubMed

    Kovalenko, Maksym V

    2013-01-01

    This account highlights our recent and present activities dedicated to chemical synthesis and applications of inorganic nanostructures. In particular, we discuss the potential of metal amides as precursors in the synthesis of metallic and semiconductor nanocrystals. We show the importance of surface chemical functionalization for the emergence of collective electronic properties in nanocrystal solids. We also demonstrate a new kind of long-range ordered, crystalline matter comprising colloidal nanocrystals and atomically defined inorganic clusters. Finally, we point the reader's attention to the high potential benefits of size- and shape-tunability of nanocrystals for achieving higher performance of rechargeable Li-ion battery electrodes.

  20. Ultra-dense billion year memory chip

    SciTech Connect

    2009-01-01

    This video shows an iron nanoparticle shuttle moving through a carbon nanotube in the presence of a low voltage electrical current. The shuttles position inside the tube can function as a high-density nonvolatile memory element. (Courtesy of /Zettl Research Group, Lawrence Berkeley National Laboratory and University of California at Berkeley.)

  1. The future of memory

    NASA Astrophysics Data System (ADS)

    Marinella, M.

    In the not too distant future, the traditional memory and storage hierarchy of may be replaced by a single Storage Class Memory (SCM) device integrated on or near the logic processor. Traditional magnetic hard drives, NAND flash, DRAM, and higher level caches (L2 and up) will be replaced with a single high performance memory device. The Storage Class Memory paradigm will require high speed (< 100 ns read/write), excellent endurance (> 1012), nonvolatility (retention > 10 years), and low switching energies (< 10 pJ per switch). The International Technology Roadmap for Semiconductors (ITRS) has recently evaluated several potential candidates SCM technologies, including Resistive (or Redox) RAM, Spin Torque Transfer RAM (STT-MRAM), and phase change memory (PCM). All of these devices show potential well beyond that of current flash technologies and research efforts are underway to improve the endurance, write speeds, and scalabilities to be on-par with DRAM. This progress has interesting implications for space electronics: each of these emerging device technologies show excellent resistance to the types of radiation typically found in space applications. Commercially developed, high density storage class memory-based systems may include a memory that is physically radiation hard, and suitable for space applications without major shielding efforts. This paper reviews the Storage Class Memory concept, emerging memory devices, and possible applicability to radiation hardened electronics for space.

  2. Nanocrystal waveguide (NOW) laser

    DOEpatents

    Simpson, John T.; Simpson, Marcus L.; Withrow, Stephen P.; White, Clark W.; Jaiswal, Supriya L.

    2005-02-08

    A solid state laser includes an optical waveguide and a laser cavity including at least one subwavelength mirror disposed in or on the optical waveguide. A plurality of photoluminescent nanocrystals are disposed in the laser cavity. The reflective subwavelength mirror can be a pair of subwavelength resonant gratings (SWG), a pair of photonic crystal structures (PC), or a distributed feedback structure. In the case of a pair of mirrors, a PC which is substantially transmissive at an operating wavelength of the laser can be disposed in the laser cavity between the subwavelength mirrors to improve the mode structure, coherence and overall efficiency of the laser. A method for forming a solid state laser includes the steps of providing an optical waveguide, creating a laser cavity in the optical waveguide by disposing at least one subwavelength mirror on or in the waveguide, and positioning a plurality of photoluminescent nanocrystals in the laser cavity.

  3. Patterning nanocrystals using DNA

    NASA Astrophysics Data System (ADS)

    Williams, Shara Carol

    One of the goals of nanotechnology is to enable programmed self-assembly of patterns made of various materials with nanometer-sized control. This dissertation describes the results of experiments templating arrangements of gold and semiconductor nanocrystals using 2'-deoxyribonucleic acid (DNA). Previously, simple DNA-templated linear arrangements of two and three nanocrystals structures have been made. Here, we have sought to assemble larger and more complex nanostructures. Cold-DNA conjugates with 50 to 100 bases self-assembled into planned arrangements using strands of DNA containing complementary base sequences. We used two methods to increase the complexity of the arrangements: using branched synthetic doublers within the DNA covalent backbone to create discrete nanocrystal groupings, and incorporating the nanocrystals into a previously developed DNA lattice structure that self-assembles from tiles made of DNA double-crossover molecules to create ordered nanoparticle arrays. In the first project, the introduction of a covalently-branched synthetic doubler reagent into the backbone of DNA strands created a branched DNA "trimer." This DNA trimer templated various structures that contained groupings of three and four gold nanoparticles, giving promising, but inconclusive transmission electron microscopy (TEM) results. Due to the presence of a variety of possible structures in the reaction mixtures, and due to the difficulty of isolating the desired structures, the TEM and gel electrophoresis results for larger structures having four particles, and for structures containing both 5 and 10 nm gold nanoparticles were inconclusive. Better results may come from using optical detection methods, or from improved sample preparation. In the second project, we worked toward making two-dimensional ordered arrays of nanocrystals. We replicated and improved upon previous results for making DNA lattices, increasing the size of the lattices to a length greater than 20 mum, and

  4. Patterning nanocrystals using DNA

    SciTech Connect

    Williams, Shara Carol

    2003-01-01

    One of the goals of nanotechnology is to enable programmed self-assembly of patterns made of various materials with nanometer-sized control. This dissertation describes the results of experiments templating arrangements of gold and semiconductor nanocrystals using 2'-deoxyribonucleic acid (DNA). Previously, simple DNA-templated linear arrangements of two and three nanocrystals structures have been made.[1] Here, we have sought to assemble larger and more complex nanostructures. Gold-DNA conjugates with 50 to 100 bases self-assembled into planned arrangements using strands of DNA containing complementary base sequences. We used two methods to increase the complexity of the arrangements: using branched synthetic doublers within the DNA covalent backbone to create discrete nanocrystal groupings, and incorporating the nanocrystals into a previously developed DNA lattice structure [2][3] that self-assembles from tiles made of DNA double-crossover molecules to create ordered nanoparticle arrays. In the first project, the introduction of a covalently-branched synthetic doubler reagent into the backbone of DNA strands created a branched DNA ''trimer.'' This DNA trimer templated various structures that contained groupings of three and four gold nanoparticles, giving promising, but inconclusive transmission electron microscopy (TEM) results. Due to the presence of a variety of possible structures in the reaction mixtures, and due to the difficulty of isolating the desired structures, the TEM and gel electrophoresis results for larger structures having four particles, and for structures containing both 5 and 10 nm gold nanoparticles were inconclusive. Better results may come from using optical detection methods, or from improved sample preparation. In the second project, we worked toward making two-dimensional ordered arrays of nanocrystals. We replicated and improved upon previous results for making DNA lattices, increasing the size of the lattices to a length greater than

  5. Magnetic Analog Random-Access Memory

    NASA Technical Reports Server (NTRS)

    Katti, Romney R.; Wu, Jiin-Chuan; Stadler, Henry L.

    1991-01-01

    Proposed integrated, solid-state, analog random-access memory base on principle of magnetic writing and magnetoresistive reading. Current in writing conductor magnetizes storage layer. Remanent magnetization in storage layer penetrates readout layer and detected by magnetoresistive effect or Hall effect. Memory cells are part of integrated circuit including associated reading and writing transistors. Intended to provide high storage density and rapid access, nonvolatile, consumes little power, and relatively invulnerable to ionizing radiation.

  6. Electronic spectra of semiconductor nanocrystals

    SciTech Connect

    Alivisatos, A.P.

    1993-12-31

    Semiconductor nanocrystals smaller than the bulk exciton show substantial quantum confinement effects. Recent experiments including Stark effect, resonance Raman, valence band photoemission, and near edge X-ray adsorption will be used to put together a picture of the nanocrystal electronic states.

  7. Nanocrystal/sol-gel nanocomposites

    DOEpatents

    Petruska, Melissa A.; Klimov, Victor L.

    2007-06-05

    The present invention is directed to solid composites including colloidal nanocrystals within a sol-gel host or matrix and to processes of forming such solid composites. The present invention is further directed to alcohol soluble colloidal nanocrystals useful in formation of sol-gel based solid composites.

  8. Photoemission studies of semiconductor nanocrystals

    SciTech Connect

    Hamad, K. S.; Roth, R.; Alivisatos, A. P.

    1997-04-01

    Semiconductor nanocrystals have been the focus of much attention in the last ten years due predominantly to their size dependent optical properties. Namely, the band gap of nanocrystals exhibits a shift to higher energy with decreasing size due to quantum confinement effects. Research in this field has employed primarily optical techniques to study nanocrystals, and in this respect this system has been investigated extensively. In addition, one is able to synthesize monodisperse, crystalline particles of CdS, CdSe, Si, InP, InAs, as well as CdS/HgS/CdS and CdSe/CdS composites. However, optical spectroscopies have proven ambiguous in determining the degree to which electronic excitations are interior or surface admixtures or giving a complete picture of the density of states. Photoemission is a useful technique for understanding the electronic structure of nanocrystals and the effects of quantum confinement, chemical environments of the nanocrystals, and surface coverages. Of particular interest to the authors is the surface composition and structure of these particles, for they have found that much of the behavior of nanocrystals is governed by their surface. Previously, the authors had performed x-ray photoelectron spectroscopy (XPS) on CdSe nanocrystals. XPS has proven to be a powerful tool in that it allows one to determine the composition of the nanocrystal surface.

  9. Method of synthesizing pyrite nanocrystals

    DOEpatents

    Wadia, Cyrus; Wu, Yue

    2013-04-23

    A method of synthesizing pyrite nanocrystals is disclosed which in one embodiment includes forming a solution of iron (III) diethyl dithiophosphate and tetra-alkyl-ammonium halide in water. The solution is heated under pressure. Pyrite nanocrystal particles are then recovered from the solution.

  10. Nanocrystal/sol-gel nanocomposites

    SciTech Connect

    Petruska, Melissa A; Klimov, Victor L

    2012-06-12

    The present invention is directed to solid composites including colloidal nanocrystals within a sol-gel host or matrix and to processes of forming such solid composites. The present invention is further directed to alcohol soluble colloidal nanocrystals useful in formation of sol-gel based solid composites

  11. Mechanical Properties of Nanocrystal Supercrystals

    SciTech Connect

    Tam, Enrico; Podsiadlo, Paul; Shevchenko, Elena; Ogletree, D. Frank; Delplancke-Ogletree, Marie-Paule; Ashby, Paul D.

    2009-12-30

    Colloidal nanocrystals attract significant interest due to their potential applications in electronic, magnetic, and optical devices. Nanocrystal supercrystals (NCSCs) are particularly appealing for their well ordered structure and homogeneity. The interactions between organic ligands that passivate the inorganic nanocrystal cores critically influence their self-organization into supercrystals, By investigating the mechanical properties of supercrystals, we can directly characterize the particle-particle interactions in a well-defined geometry, and gain insight into both the self-assembly process and the potential applications of nanocrystal supercrystals. Here we report nanoindentation studies of well ordered lead-sulfide (Pbs) nanocrystal supercrystals. Their modulus and hardness were found to be similar to soft polymers at 1.7 GPa and 70 MPa respectively and the fractures toughness was 39 KPa/m1/2, revealing the extremely brittle nature of these materials.

  12. Nanocrystal/sol-gel nanocomposites

    DOEpatents

    Klimov, Victor L.; Petruska, Melissa A.

    2010-05-25

    The present invention is directed to a process for preparing a solid composite having colloidal nanocrystals dispersed within a sol-gel matrix, the process including admixing colloidal nanocrystals with an amphiphilic polymer including hydrophilic groups selected from the group consisting of --COOH, --OH, --SO.sub.3H, --NH.sub.2, and --PO.sub.3H.sub.2 within a solvent to form an alcohol-soluble colloidal nanocrystal-polymer complex, admixing the alcohol-soluble colloidal nanocrystal-polymer complex and a sol-gel precursor material, and, forming the solid composite from the admixture. The present invention is also directed to the resultant solid composites and to the alcohol-soluble colloidal nanocrystal-polymer complexes.

  13. Modeling of SONOS Memory Cell Erase Cycle

    NASA Technical Reports Server (NTRS)

    Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat H.

    2011-01-01

    Utilization of Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) nonvolatile semiconductor memories as a flash memory has many advantages. These electrically erasable programmable read-only memories (EEPROMs) utilize low programming voltages, have a high erase/write cycle lifetime, are radiation hardened, and are compatible with high-density scaled CMOS for low power, portable electronics. In this paper, the SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. Comparisons were made between the model predictions and experimental data.

  14. Non Volatile Flash Memory Radiation Tests

    NASA Technical Reports Server (NTRS)

    Irom, Farokh; Nguyen, Duc N.; Allen, Greg

    2012-01-01

    Commercial flash memory industry has experienced a fast growth in the recent years, because of their wide spread usage in cell phones, mp3 players and digital cameras. On the other hand, there has been increased interest in the use of high density commercial nonvolatile flash memories in space because of ever increasing data requirements and strict power requirements. Because of flash memories complex structure; they cannot be treated as just simple memories in regards to testing and analysis. It becomes quite challenging to determine how they will respond in radiation environments.

  15. Variable-Resistivity Material For Memory Circuits

    NASA Technical Reports Server (NTRS)

    Nagasubramanian, Ganesan; Distefano, Salvador; Moacanin, Jovan

    1989-01-01

    Nonvolatile memory elements packed densely. Electrically-erasable, programmable, read-only memory matrices made with newly-synthesized organic material of variable electrical resistivity. Material, polypyrrole doped with tetracyanoquinhydrone (TCNQ), changes reversibly between insulating or higher-resistivity state and conducting or low-resistivity state. Thin film of conductive polymer separates layer of row conductors from layer of column conductors. Resistivity of film at each intersection and, therefore, resistance of memory element defined by row and column, increased or decreased by application of suitable switching voltage. Matrix circuits made with this material useful for experiments in associative electronic memories based on models of neural networks.

  16. Modeling of Sonos Memory Cell Erase Cycle

    NASA Technical Reports Server (NTRS)

    Phillips, Thomas A.; MacLeond, Todd C.; Ho, Fat D.

    2010-01-01

    Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile semiconductor memories (NVSMS) have many advantages. These memories are electrically erasable programmable read-only memories (EEPROMs). They utilize low programming voltages, endure extended erase/write cycles, are inherently resistant to radiation, and are compatible with high-density scaled CMOS for low power, portable electronics. The SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. The SONOS floating gate charge and voltage, tunneling current, threshold voltage, and drain current were characterized during an erase cycle. Comparisons were made between the model predictions and experimental device data.

  17. Silicon nanocrystal inks, films, and methods

    DOEpatents

    Wheeler, Lance Michael; Kortshagen, Uwe Richard

    2015-09-01

    Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

  18. A non-volatile flip-flop based on diode-selected PCM for ultra-low power systems

    NASA Astrophysics Data System (ADS)

    Ye, Yong; Du, Yuan; Gao, Dan; Kang, Yong; Song, Zhitang; Chen, Bomy

    2016-10-01

    As the process technology is continuously shrinking, low power consumption is a major issue in VLSI Systems-on-Chip (SoCs), especially for standby-power-critical applications. Recently, the emerging CMOS-compatible non-volatile memories (NVMs), such as Phase Change Memory (PCM), have been used as on-chip storage elements, which can obtain non-volatile processing, nearly-zero standby power and instant-on capability. PCM has been considered as the best candidate for the next generation of NVMs for its low cost, high density and high resistance transformation ratio. In this paper, for the first time, we present a diode-selected PCM based non-volatile flip-flop (NVFF) which is optimized for better power consumption and process variation tolerance. With dual trench isolation process, the diode-selected PCM realizes ultra small area, which is very suitable for multi-context configuration and large scale flip-flops matrix. Since the MOS-selected PCM is hard to shrink further due to large amount of PCM write current, the proposed NVFF achieves higher power efficiency without loss of current driving capability. Using the 40nm manufacturing process, the area of the cell (1D1R) is as small as 0.016 μm2. Simulation results show that the energy consumption during the recall operation is 62 fJ with 1.1 standard supply voltage, which is reduced by 54.9% compared to the previous 2T2R based NVFF. When the supply voltage reduces to 0.7 V, the recall energy is as low as 17 fJ. With the great advantages in cell size and energy, the proposed diode-selected NVFF is very applicable and cost-effective for ULP systems.

  19. Biomolecular Assembly of Gold Nanocrystals

    SciTech Connect

    Micheel, Christine Marya

    2005-05-20

    Over the past ten years, methods have been developed to construct discrete nanostructures using nanocrystals and biomolecules. While these frequently consist of gold nanocrystals and DNA, semiconductor nanocrystals as well as antibodies and enzymes have also been used. One example of discrete nanostructures is dimers of gold nanocrystals linked together with complementary DNA. This type of nanostructure is also known as a nanocrystal molecule. Discrete nanostructures of this kind have a number of potential applications, from highly parallel self-assembly of electronics components and rapid read-out of DNA computations to biological imaging and a variety of bioassays. My research focused in three main areas. The first area, the refinement of electrophoresis as a purification and characterization method, included application of agarose gel electrophoresis to the purification of discrete gold nanocrystal/DNA conjugates and nanocrystal molecules, as well as development of a more detailed understanding of the hydrodynamic behavior of these materials in gels. The second area, the development of methods for quantitative analysis of transmission electron microscope data, used computer programs written to find pair correlations as well as higher order correlations. With these programs, it is possible to reliably locate and measure nanocrystal molecules in TEM images. The final area of research explored the use of DNA ligase in the formation of nanocrystal molecules. Synthesis of dimers of gold particles linked with a single strand of DNA possible through the use of DNA ligase opens the possibility for amplification of nanostructures in a manner similar to polymerase chain reaction. These three areas are discussed in the context of the work in the Alivisatos group, as well as the field as a whole.

  20. Cellulose nanocrystal submonolayers by spin coating.

    PubMed

    Kontturi, Eero; Johansson, Leena-Sisko; Kontturi, Katri S; Ahonen, Päivi; Thüne, Peter C; Laine, Janne

    2007-09-11

    Dilute concentrations of cellulose nanocrystal solutions were spin coated onto different substrates to investigate the effect of the substrate on the nanocrystal submonolayers. Three substrates were probed: silica, titania, and amorphous cellulose. According to atomic force microscopy (AFM) images, anionic cellulose nanocrystals formed small aggregates on the anionic silica substrate, whereas a uniform two-dimensional distribution of nanocrystals was achieved on the cationic titania substrate. The uniform distribution of cellulose nanocrystal submonolayers on titania is an important factor when dimensional analysis of the nanocrystals is desired. Furthermore, the amount of nanocrystals deposited on titania was multifold in comparison to the amounts on silica, as revealed by AFM image analysis and X-ray photoelectron spectroscopy. Amorphous cellulose, the third substrate, resulted in a somewhat homogeneous distribution of the nanocrystal submonolayers, but the amounts were as low as those on the silica substrate. These differences in the cellulose nanocrystal deposition were attributed to electrostatic effects: anionic cellulose nanocrystals are adsorbed on cationic titania in addition to the normal spin coating deposition. The anionic silica surface, on the other hand, causes aggregation of the weakly anionic cellulose nanocrystals which are forced on the repulsive substrate by spin coating. The electrostatically driven adsorption also influences the film thickness of continuous ultrathin films of cellulose nanocrystals. The thicker films of charged nanocrystals on a substrate of opposite charge means that the film thickness is not independent of the substrate when spin coating cellulose nanocrystals in the ultrathin regime (<100 nm).

  1. Si nanocrystals and nanocrystal interfaces studied by positron annihilation

    NASA Astrophysics Data System (ADS)

    Kujala, J.; Slotte, J.; Tuomisto, F.; Hiller, D.; Zacharias, M.

    2016-10-01

    Si nanocrystals embedded in a SiO 2 matrix were studied with positron annihilation and photoluminescence spectroscopies. Analysis of the S- and W-parameters for the sample annealed at 800 °C reveals a positron trap at the interface between the amorphous nanodots and the surrounding matrix. Another trap state is observed in the 1150 °C heat treated samples where nanodots are in a crystalline form. Positrons are most likely trapped to defects related to dangling bonds at the surface of the nanocrystals. Passivation of the samples results on one hand in the decrease of the S-parameter implying a decrease in the open volume of the interface state and, on the other hand, in the strengthening of the positron annihilation signal from the interface. The intensity of the photoluminescence signal increases with the formation of the nanocrystals. Passivation of samples strengthens the photoluminescence signal, further indicating a successful deactivation of luminescence quenching at the nanocrystal surface. Strengthening of the positron annihilation signal and an increase in the photoluminescence intensity in passivated silicon nanocrystals suggests that the positron trap at the interface does not contribute to a significant extent to the exciton recombination in the nanocrystals.

  2. Synthesis and Doping of Silicon Nanocrystals for Versatile Nanocrystal Inks

    NASA Astrophysics Data System (ADS)

    Kramer, Nicolaas Johannes

    The impact of nanotechnology on our society is getting larger every year. Electronics are becoming smaller and more powerful, the "Internet of Things" is all around us, and data generation is increasing exponentially. None of this would have been possible without the developments in nanotechnology. Crystalline semiconductor nanoparticles (nanocrystals) are one of the latest developments in the field of nanotechnology. This thesis addresses three important challenges for the transition of silicon nanocrystals from the lab bench to the marketplace: A better understanding of the nanocrystal synthesis was obtained, the electronic properties of the nanocrystals were characterized and tuned, and novel silicon nanocrystal inks were formed and applied using simple coating technologies. Plasma synthesis of nanocrystals has numerous advantages over traditional solution-based synthesis methods. While the formation of nanoparticles in low pressure nonthermal plasmas is well known, the heating mechanism leading to their crystallization is poorly understood. A combination of comprehensive plasma characterization with a nanoparticle heating model presented here reveals the underlying plasma physics leading to crystallization. The model predicts that the nanoparticles reach temperatures as high as 900 K in the plasma as a result of heating reactions on the nanoparticle surface. These temperatures are well above the gas temperature and sufficient for complete nanoparticle crystallization. Moving the field of plasma nanoparticle synthesis to atmospheric pressures is important for lowering its cost and making the process attractive for industrial applications. The heating and charging model for silicon nanoparticles was adapted in Chapter 3 to study plasmas maintained over a wide range of pressures (10 -- 105 Pa). The model considers three collisionality regimes and determines the dominant contribution of each regime under various plasma conditions. Strong nanoparticle cooling at

  3. Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure

    PubMed Central

    Suzuki, D.; Natsui, M.; Mochizuki, A.; Miura, S.; Honjo, H.; Kinoshita, K.; Fukami, S.; Sato, H.; Ikeda, S.; Endoh, T.; Ohno, H.; Hanyu, T.

    2014-01-01

    A compact nonvolatile programmable switch (NVPS) using 90 nm CMOS technology together with perpendicular magnetic tunnel junction (p-MTJ) devices is fabricated for zero-standby-power field-programmable gate array. Because routing information does not change once it is programmed into an NVPS, high-speed read and write accesses are not required and a write-control transistor can be shared among all the NVPSs, which greatly simplifies structure of the NVPS. In fact, the effective area of the proposed NVPS is reduced by 40% compared to that of a conventional MTJ-based NVPS. The instant on/off behavior without external nonvolatile memory access is also demonstrated using the fabricated test chip. PMID:24753634

  4. Assemblies of Cellulose Nanocrystals

    NASA Astrophysics Data System (ADS)

    Kumacheva, Eugenia

    The entropically driven coassembly of nanorods (cellulose nanocrystals, CNCs) and different types of nanoparticles (NPs), including dye-labeled latex NPs, carbon dots and plasmonic NPs was experimentally studied in aqueous suspensions and in solid films. In mixed CNC-NP suspensions, phase separation into an isotropic NP-rich and a chiral nematic CNC-rich phase took place; the latter contained a significant amount of NPs. Drying the mixed suspension resulted in CNC-NP films with planar disordered layers of NPs, which alternated with chiral nematic CNC-rich regions. In addition, NPs were embedded in the chiral nematic domains. The stratified morphology of the films, together with a random distribution of NPs in the anisotropic phase, led to the films having close-to-uniform fluorescence, birefringence, and circular dichroism properties.

  5. Modeling Verwey transition temperature of Fe3O4 nanocrystals

    NASA Astrophysics Data System (ADS)

    Jiang, Xiao bao; Xiao, Bei bei; Yang, Hong yu; Gu, Xiao yan; Sheng, Hong chao; Zhang, Xing hua

    2016-11-01

    The Verwey transition in nanoscale is an important physical property for Fe3O4 nanocrystals and has attracted extensive attention in recent years. In this work, an analytic thermodynamic model without any adjusting parameters is developed to estimate the size and shape effects on modulating the Verwey transition temperature of Fe3O4 nanocrystals. The results show that the Verwey transition temperature reduces with increasing shape parameter λ or decreasing size D. A good agreement between the prediction and the experimental data verified our physical insight that the Verwey transition of Fe3O4 can be directly related to the atomic thermal vibration. The results presented in this work will be of benefit to the understanding of the microscopic mechanism of the Verwey transition and the design of future generation switching and memory devices.

  6. Flash Memory Reliability: Read, Program, and Erase Latency Versus Endurance Cycling

    NASA Technical Reports Server (NTRS)

    Heidecker, Jason

    2010-01-01

    This report documents the efforts and results of the fiscal year (FY) 2010 NASA Electronic Parts and Packaging Program (NEPP) task for nonvolatile memory (NVM) reliability. This year's focus was to measure latency (read, program, and erase) of NAND Flash memories and determine how these parameters drift with erase/program/read endurance cycling.

  7. Radiation Test Challenges for Scaled Commerical Memories

    NASA Technical Reports Server (NTRS)

    LaBel, Kenneth A.; Ladbury, Ray L.; Cohn, Lewis M.; Oldham, Timothy

    2007-01-01

    As sub-100nm CMOS technologies gather interest, the radiation effects performance of these technologies provide a significant challenge. In this talk, we shall discuss the radiation testing challenges as related to commercial memory devices. The focus will be on complex test and failure modes emerging in state-of-the-art Flash non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs), which are volatile. Due to their very high bit density, these device types are highly desirable for use in the natural space environment. In this presentation, we shall discuss these devices with emphasis on considerations for test and qualification methods required.

  8. Semiconductor nanocrystal-based phagokinetic tracking

    SciTech Connect

    Alivisatos, A Paul; Larabell, Carolyn A; Parak, Wolfgang J; Le Gros, Mark; Boudreau, Rosanne

    2014-11-18

    Methods for determining metabolic properties of living cells through the uptake of semiconductor nanocrystals by cells. Generally the methods require a layer of neutral or hydrophilic semiconductor nanocrystals and a layer of cells seeded onto a culture surface and changes in the layer of semiconductor nanocrystals are detected. The observed changes made to the layer of semiconductor nanocrystals can be correlated to such metabolic properties as metastatic potential, cell motility or migration.

  9. Linearly arranged polytypic CZTSSe nanocrystals

    PubMed Central

    Fan, Feng-Jia; Wu, Liang; Gong, Ming; Chen, Shi You; Liu, Guang Yao; Yao, Hong-Bin; Liang, Hai-Wei; Wang, Yi-Xiu; Yu, Shu-Hong

    2012-01-01

    Even colloidal polytypic nanostructures show promising future in band-gap tuning and alignment, researches on them have been much less reported than the standard nano-heterostructures because of the difficulties involved in synthesis. Up to now, controlled synthesis of colloidal polytypic nanocrsytals has been only realized in II-VI tetrapod and octopod nanocrystals with branched configurations. Herein, we report a colloidal approach for synthesizing non-branched but linearly arranged polytypic I2-II-IV-VI4 nanocrystals, with a focus on polytypic non-stoichiometric Cu2ZnSnSxSe4−x nanocrystals. Each synthesized polytypic non-stoichiometric Cu2ZnSnSxSe4−x nanocrystal is consisted of two zinc blende-derived ends and one wurtzite-derived center part. The formation mechanism has been studied and the phase composition can be tuned through adjusting the reaction temperature, which brings a new band-gap tuning approach to Cu2ZnSnSxSe4-x nanocrystals. PMID:23233871

  10. Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures.

    PubMed

    Hu, Zhongqiang; Wang, Xinjun; Nan, Tianxiang; Zhou, Ziyao; Ma, Beihai; Chen, Xiaoqin; Jones, John G; Howe, Brandon M; Brown, Gail J; Gao, Yuan; Lin, Hwaider; Wang, Zhiguang; Guo, Rongdi; Chen, Shuiyuan; Shi, Xiaoling; Shi, Wei; Sun, Hongzhi; Budil, David; Liu, Ming; Sun, Nian X

    2016-09-01

    Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices.

  11. Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

    PubMed Central

    Hu, Zhongqiang; Wang, Xinjun; Nan, Tianxiang; Zhou, Ziyao; Ma, Beihai; Chen, Xiaoqin; Jones, John G.; Howe, Brandon M.; Brown, Gail J.; Gao, Yuan; Lin, Hwaider; Wang, Zhiguang; Guo, Rongdi; Chen, Shuiyuan; Shi, Xiaoling; Shi, Wei; Sun, Hongzhi; Budil, David; Liu, Ming; Sun, Nian X.

    2016-01-01

    Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices. PMID:27581071

  12. An error-resilient non-volatile magneto-elastic universal logic gate with ultralow energy-delay product

    PubMed Central

    Biswas, Ayan K.; Atulasimha, Jayasimha; Bandyopadhyay, Supriyo

    2014-01-01

    A long-standing goal of computer technology is to process and store digital information with the same device in order to implement new architectures. One way to accomplish this is to use nanomagnetic logic gates that can perform Boolean operations and then store the output data in the magnetization states of nanomagnets, thereby doubling as both logic and memory. Unfortunately, many of these nanomagnetic devices do not possess the seven essential characteristics of a Boolean logic gate : concatenability, non-linearity, isolation between input and output, gain, universal logic implementation, scalability and error resilience. More importantly, their energy-delay products and error rates tend to vastly exceed that of conventional transistor-based logic gates, which is unacceptable. Here, we propose a non-volatile voltage-controlled nanomagnetic logic gate that possesses all the necessary characteristics of a logic gate and whose energy-delay product is two orders of magnitude less than that of other nanomagnetic (non-volatile) logic gates. The error rate is also superior. PMID:25532757

  13. Measurement of non-volatile particle number size distribution

    NASA Astrophysics Data System (ADS)

    Gkatzelis, G. I.; Papanastasiou, D. K.; Florou, K.; Kaltsonoudis, C.; Louvaris, E.; Pandis, S. N.

    2015-06-01

    An experimental methodology was developed to measure the non-volatile particle number concentration using a thermodenuder (TD). The TD was coupled with a high-resolution time-of-flight aerosol mass spectrometer, measuring the chemical composition and mass size distribution of the submicrometer aerosol and a scanning mobility particle sizer (SMPS) that provided the number size distribution of the aerosol in the range from 10 to 500 nm. The method was evaluated with a set of smog chamber experiments and achieved almost complete evaporation (> 98 %) of secondary organic as well as freshly nucleated particles, using a TD temperature of 400 °C and a centerline residence time of 15 s. This experimental approach was applied in a winter field campaign in Athens and provided a direct measurement of number concentration and size distribution for particles emitted from major pollution sources. During periods in which the contribution of biomass burning sources was dominant, more than 80 % of particle number concentration remained after passing through the thermodenuder, suggesting that nearly all biomass burning particles had a non-volatile core. These remaining particles consisted mostly of black carbon (60 % mass contribution) and organic aerosol, OA (40 %). Organics that had not evaporated through the TD were mostly biomass burning OA (BBOA) and oxygenated OA (OOA) as determined from AMS source apportionment analysis. For periods during which traffic contribution was dominant 50-60 % of the particles had a non-volatile core while the rest evaporated at 400 °C. The remaining particle mass consisted mostly of black carbon (BC) with an 80 % contribution, while OA was responsible for another 15-20 %. Organics were mostly hydrocarbon-like OA (HOA) and OOA. These results suggest that even at 400 °C some fraction of the OA does not evaporate from particles emitted from common combustion processes, such as biomass burning and car engines, indicating that a fraction of this type

  14. Nanocrystal powered nanomotor

    DOEpatents

    Regan, Brian C.; Zettl, Alexander K.; Aloni, Shaul

    2011-01-04

    A nanoscale nanocrystal which may be used as a reciprocating motor is provided, comprising a substrate having an energy differential across it, e.g. an electrical connection to a voltage source at a proximal end; an atom reservoir on the substrate distal to the electrical connection; a nanoparticle ram on the substrate distal to the atom reservoir; a nanolever contacting the nanoparticle ram and having an electrical connection to a voltage source, whereby a voltage applied between the electrical connections on the substrate and the nanolever causes movement of atoms between the reservoir and the ram. Movement of the ram causes movement of the nanolever relative to the substrate. The substrate and nanolever preferably comprise multiwalled carbon nanotubes (MWNTs) and the atom reservoir and nanoparticle ram are preferably metal (e.g. indium) deposited as small particles on the MWNTs. The substrate may comprise a silicon chip that has been fabricated to provide the necessary electrodes and other electromechanical structures, and further supports an atomic track, which may comprise an MWNT.

  15. Analysis of Nonvolatile Residue (NVR) from Spacecraft Systems

    NASA Technical Reports Server (NTRS)

    Colony, J. A.

    1985-01-01

    Organic contamination on critical spacecraft surfaces can cause electronic problems, serious attenuation of various optical signals, thermal control changes, and adhesion problems. Such contaminants can be detected early by the controlled use of witness mirrors, witness plates, wipe sampling, or direct solvent extraction. Each method requires careful control of variables of technique and materials to attain the ultimate sensitivities inherent to that procedure. Subsequent chemical analysis of the contaminant sample by infrared and mass spectrometry identifies the components, gives semiquantitative estimates of contaminant thickness, indicates possible sources of the nonvolatile residue (NVR), and provides guidance for effective cleanup procedures.

  16. Electrospinning of native cellulose from nonvolatile solvent system

    NASA Astrophysics Data System (ADS)

    Xu, Shanshan; He, Aihua; Han, Charles C.

    2009-03-01

    Electrospinning of cellulose in a highly efficient RTIL of 1-allyl-3-methylimidazolium chloride (AMIMCl) was investigated. It was found that the introduction of co-solvent dimethyl sulfoxide (DMSO) contributed to a continuous jet. The problems lying in nonvolatility and the high ionic strength of the RTIL were successfully resolved using a rotating copper-wire drum as a collector and solidifying the jet under high relative humidity. The water vapor played an important role in leading to ``skin formation'' which helped to stabilize the fibrous morphology, and finally smooth ultra-thin regenerated cellulose fibers were obtained

  17. Nanocrystal assembly for tandem catalysis

    DOEpatents

    Yang, Peidong; Somorjai, Gabor; Yamada, Yusuke; Tsung, Chia-Kuang; Huang, Wenyu

    2014-10-14

    The present invention provides a nanocrystal tandem catalyst comprising at least two metal-metal oxide interfaces for the catalysis of sequential reactions. One embodiment utilizes a nanocrystal bilayer structure formed by assembling sub-10 nm platinum and cerium oxide nanocube monolayers on a silica substrate. The two distinct metal-metal oxide interfaces, CeO.sub.2--Pt and Pt--SiO.sub.2, can be used to catalyze two distinct sequential reactions. The CeO.sub.2--Pt interface catalyzed methanol decomposition to produce CO and H.sub.2, which were then subsequently used for ethylene hydroformylation catalyzed by the nearby Pt--SiO.sub.2 interface. Consequently, propanal was selectively produced on this nanocrystal bilayer tandem catalyst.

  18. Nanocrystals for luminescent solar concentrators.

    PubMed

    Bradshaw, Liam R; Knowles, Kathryn E; McDowall, Stephen; Gamelin, Daniel R

    2015-02-11

    Luminescent solar concentrators (LSCs) harvest sunlight over large areas and concentrate this energy onto photovoltaics or for other uses by transporting photons through macroscopic waveguides. Although attractive for lowering solar energy costs, LSCs remain severely limited by luminophore reabsorption losses. Here, we report a quantitative comparison of four types of nanocrystal (NC) phosphors recently proposed to minimize reabsorption in large-scale LSCs: two nanocrystal heterostructures and two doped nanocrystals. Experimental and numerical analyses both show that even the small core absorption of the leading NC heterostructures causes major reabsorption losses at relatively short transport lengths. Doped NCs outperform the heterostructures substantially in this critical property. A new LSC phosphor is introduced, nanocrystalline Cd(1-x)Cu(x)Se, that outperforms all other leading NCs by a significant margin in both small- and large-scale LSCs under full-spectrum conditions.

  19. Charge retention in quantized energy levels of nanocrystals

    NASA Astrophysics Data System (ADS)

    Dâna, Aykutlu; Akça, İmran; Ergun, Orçun; Aydınlı, Atilla; Turan, Raşit; Finstad, Terje G.

    2007-04-01

    Understanding charging mechanisms and charge retention dynamics of nanocrystal (NC) memory devices is important in optimization of device design. Capacitance spectroscopy on PECVD grown germanium NCs embedded in a silicon oxide matrix was performed. Dynamic measurements of discharge dynamics are carried out. Charge decay is modelled by assuming storage of carriers in the ground states of NCs and that the decay is dominated by direct tunnelling. Discharge rates are calculated using the theoretical model for different NC sizes and densities and are compared with experimental data. Experimental results agree well with the proposed model and suggest that charge is indeed stored in the quantized energy levels of the NCs.

  20. Injected nanocrystals for targeted drug delivery

    PubMed Central

    Lu, Yi; Li, Ye; Wu, Wei

    2016-01-01

    Nanocrystals are pure drug crystals with sizes in the nanometer range. Due to the advantages of high drug loading, platform stability, and ease of scaling-up, nanocrystals have been widely used to deliver poorly water-soluble drugs. Nanocrystals in the blood stream can be recognized and sequestered as exogenous materials by mononuclear phagocytic system (MPS) cells, leading to passive accumulation in MPS-rich organs, such as liver, spleen and lung. Particle size, morphology and surface modification affect the biodistribution of nanocrystals. Ligand conjugation and stimuli-responsive polymers can also be used to target nanocrystals to specific pathogenic sites. In this review, the progress on injected nanocrystals for targeted drug delivery is discussed following a brief introduction to nanocrystal preparation methods, i.e., top-down and bottom-up technologies. PMID:27006893

  1. Semiconductor Nanocrystals for Biological Imaging

    SciTech Connect

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  2. Enhanced non-volatile resistive switching in suspended single-crystalline ZnO nanowire with controllable multiple states

    NASA Astrophysics Data System (ADS)

    Zhang, Rui; Pang, Wei; Zhang, Qing; Chen, Yan; Chen, Xuejiao; Feng, Zhihong; Yang, Jianhua; Zhang, Daihua

    2016-08-01

    Resistive switching nanostructures are a promising candidate for next-generation non-volatile memories. In this report, we investigate the switching behaviors of single-crystalline ZnO nanowires suspended in air. They exhibit significantly higher current density, lower switching voltage, and more pronounced multiple conductance states compared to nanowires in direct contact with substrate. We attribute the effect to enhanced Joule heating efficiency, reduced surface scattering, and more significantly, the positive feedback established between the current density and local temperature in the suspended nanowires. The proposed mechanism has been quantitatively examined by finite element simulations. We have also demonstrated an innovative approach to initiating the current-temperature mutual enhancement through illumination by ultraviolet light, which further confirmed our hypothesis and enabled even greater enhancement. Our work provides further insight into the resistive switching mechanism of single-crystalline one-dimensional nanostructures, and suggests an effective means of performance enhancement and device optimization.

  3. Enhanced non-volatile resistive switching in suspended single-crystalline ZnO nanowire with controllable multiple states.

    PubMed

    Zhang, Rui; Pang, Wei; Zhang, Qing; Chen, Yan; Chen, Xuejiao; Feng, Zhihong; Yang, Jianhua; Zhang, Daihua

    2016-06-27

    Resistive switching nanostructures are a promising candidate for next-generation non-volatile memories. In this report, we investigate the switching behaviors of single-crystalline ZnO nanowires suspended in air. They exhibit significantly higher current density, lower switching voltage, and more pronounced multiple conductance states compared to nanowires in direct contact with substrate. We attribute the effect to enhanced Joule heating efficiency, reduced surface scattering, and more significantly, the positive feedback established between the current density and local temperature in the suspended nanowires. The proposed mechanism has been quantitatively examined by finite element simulations. We have also demonstrated an innovative approach to initiating the current-temperature mutual enhancement through illumination by ultraviolet light, which further confirmed our hypothesis and enabled even greater enhancement. Our work provides further insight into the resistive switching mechanism of single-crystalline one-dimensional nanostructures, and suggests an effective means of performance enhancement and device optimization.

  4. LastingNVCache: A Technique for Improving the Lifetime of Non-volatile Caches

    SciTech Connect

    Mittal, Sparsh; Vetter, Jeffrey S; Li, Dong

    2014-01-01

    Use of NVM (Non-volatile memory) devices such as ReRAM (resistive RAM) and STT-RAM (spin transfer torque RAM) for designing on-chip caches holds the promise of providing a high-density, low-leakage alternative to SRAM. However, low write endurance of NVMs, along with the write-variation introduced by existing cache management schemes may significantly limit the lifetime of NVM caches. We present LastingNVCache, a technique for improving lifetime of NVM caches by mitigating the intra-set write variation. LastingNVCache works on the key idea that by periodically flushing a frequently-written data-item, the next time the block can be made to load into a cold block in the set. Through this, the future writes to that data-item can be redirected from a hot block to a cold block, which leads to improvement in the cache lifetime. Microarchitectural simulations have shown that LastingNVCache provides 6.36X, 9.79X, and 10.94X improvement in lifetime for single, dual and quad-core systems. Also, its implementation overhead is small and it outperforms a recently proposed technique for improving lifetime of NVM caches.

  5. Inkjet-printing of non-volatile organic resistive devices and crossbar array structures

    NASA Astrophysics Data System (ADS)

    Sax, Stefan; Nau, Sebastian; Popovic, Karl; Bluemel, Alexander; Klug, Andreas; List-Kratochvil, Emil J. W.

    2015-09-01

    Due to the increasing demand for storage capacity in various electronic gadgets like mobile phones or tablets, new types of non-volatile memory devices have gained a lot of attention over the last few years. Especially multilevel conductance switching elements based on organic semiconductors are of great interest due to their relatively simple device architecture and their small feature size. Since organic semiconductors combine the electronic properties of inorganic materials with the mechanical characteristics of polymers, this class of materials is suitable for solution based large area device preparation techniques. Consequently, inkjet based deposition techniques are highly capable of facing preparation related challenges. By gradually replacing the evaporated electrodes with inkjet printed silver, the preparation related influence onto device performance parameters such as the ON/OFF ratio was investigated with IV measurements and high resolution transmission electron microscopy. Due to the electrode surface roughness the solvent load during the printing of the top electrode as well as organic layer inhomogeneity's the utilization in array applications is hampered. As a prototypical example a 1diode-1resistor element and a 2×2 subarray from 5×5 array matrix were fully characterized demonstrating the versatility of inkjet printing for device preparation.

  6. Non-volatile resistive photo-switches for flexible image detector arrays

    NASA Astrophysics Data System (ADS)

    Nau, Sebastian; Wolf, Christoph; Sax, Stefan; List-Kratochvil, Emil J. W.

    2015-09-01

    The increasing quest to find lightweight, conformable or flexible image detectors for machine vision or medical imaging brings organic electronics into the spotlight for these fields of application. Here were we introduce a unique imaging device concept and its utilization in an organic, flexible detector array with simple passive matrix wiring. We present a flexible organic image detector array built up from non-volatile resistive multi-bit photo-switchable elements. This unique realization is based on an organic photodiode combined with an organic resistive memory device wired in a simple crossbar configuration. The presented concept exhibits significant advantages compared to present organic and inorganic detector array technologies, facilitating the detection and simultaneous storage of the image information in one detector pixel, yet also allowing for simple read-out of the information from a simple passive-matrix crossbar wiring. This concept is demonstrated for single photo-switchable pixels as well as for arrays with sizes up to 32 by 32 pixels (1024 bit). The presented results pave the way for a versatile flexible and easy-to-fabricate sensor array technology. In a final step, the concept was expanded to detection of x-rays.

  7. Non-volatile ferroelectric control of ferromagnetism in (Ga,Mn)As

    NASA Astrophysics Data System (ADS)

    Stolichnov, I.; Riester, S. W. E.; Trodahl, H. J.; Setter, N.; Rushforth, A. W.; Edmonds, K. W.; Campion, R. P.; Foxon, C. T.; Gallagher, B. L.; Jungwirth, T.

    2008-06-01

    Multiferroic structures that provide coupled ferroelectric and ferromagnetic responses are of significant interest as they may be used in novel memory devices and spintronic logic elements. One approach towards this goal is the use of composites that couple ferromagnetic and ferroelectric layers through magnetostrictive and piezoelectric strain transmitted across the interfaces. However, mechanical clamping of the films to the substrate limits their response. Structures where the magnetic response is modulated directly by the electric field of the poled ferroelectric would eliminate this constraint and provide a qualitatively higher level of integration, combining the emerging field of multiferroics with conventional semiconductor microelectronics. Here, we report the realization of such a device using (Ga,Mn)As, which is an archetypical diluted magnetic semiconductor with well-understood carrier-mediated ferromagnetism, and a polymer ferroelectric gate. Polarization reversal of the gate by a single voltage pulse results in a persistent modulation of the Curie temperature of the ferromagnetic semiconductor. The non-volatile gating of (Ga,Mn)As has been made possible by applying a low-temperature copolymer deposition technique that is distinct from pre-existing technologies for ferroelectric gates on magnetic oxides. This accomplishment opens a way to nanometre-scale modulation of magnetic semiconductor properties with rewritable ferroelectric domain patterns, operating at modest voltages and subnanosecond times.

  8. Vapor condensation onto a non-volatile liquid drop

    NASA Astrophysics Data System (ADS)

    Inci, Levent; Bowles, Richard K.

    2013-12-01

    Molecular dynamics simulations of miscible and partially miscible binary Lennard-Jones mixtures are used to study the dynamics and thermodynamics of vapor condensation onto a non-volatile liquid drop in the canonical ensemble. When the system volume is large, the driving force for condensation is low and only a submonolayer of the solvent is adsorbed onto the liquid drop. A small degree of mixing of the solvent phase into the core of the particles occurs for the miscible system. At smaller volumes, complete film formation is observed and the dynamics of film growth are dominated by cluster-cluster coalescence. Mixing into the core of the droplet is also observed for partially miscible systems below an onset volume suggesting the presence of a solubility transition. We also develop a non-volatile liquid drop model, based on the capillarity approximations, that exhibits a solubility transition between small and large drops for partially miscible mixtures and has a hysteresis loop similar to the one observed in the deliquescence of small soluble salt particles. The properties of the model are compared to our simulation results and the model is used to study the formulation of classical nucleation theory for systems with low free energy barriers.

  9. Vapor condensation onto a non-volatile liquid drop

    SciTech Connect

    Inci, Levent; Bowles, Richard K.

    2013-12-07

    Molecular dynamics simulations of miscible and partially miscible binary Lennard–Jones mixtures are used to study the dynamics and thermodynamics of vapor condensation onto a non-volatile liquid drop in the canonical ensemble. When the system volume is large, the driving force for condensation is low and only a submonolayer of the solvent is adsorbed onto the liquid drop. A small degree of mixing of the solvent phase into the core of the particles occurs for the miscible system. At smaller volumes, complete film formation is observed and the dynamics of film growth are dominated by cluster-cluster coalescence. Mixing into the core of the droplet is also observed for partially miscible systems below an onset volume suggesting the presence of a solubility transition. We also develop a non-volatile liquid drop model, based on the capillarity approximations, that exhibits a solubility transition between small and large drops for partially miscible mixtures and has a hysteresis loop similar to the one observed in the deliquescence of small soluble salt particles. The properties of the model are compared to our simulation results and the model is used to study the formulation of classical nucleation theory for systems with low free energy barriers.

  10. Radiation Issues and Applications of Floating Gate Memories

    NASA Technical Reports Server (NTRS)

    Scheick, L. Z.; Nguyen, D. N.

    2000-01-01

    The radiation effects that affect various systems that comprise floating gate memories are presented. The wear-out degradation results of unirradiated flash memories are compared to irradiated flash memories. The procedure analyzes the failure to write and erase caused by wear-out and degradation of internal charge pump circuits. A method is described for characterizing the radiation effects of the floating gate itself. The rate dependence, stopping power dependence, SEU susceptibility and applications of floating gate in radiation environment are presented. The ramifications for dosimetry and cell failure are discussed as well as for the long term use aspects of non-volatile memories.

  11. Exciton polarizability in semiconductor nanocrystals.

    PubMed

    Wang, Feng; Shan, Jie; Islam, Mohammad A; Herman, Irving P; Bonn, Mischa; Heinz, Tony F

    2006-11-01

    The response of charge to externally applied electric fields is an important basic property of any material system, as well as one critical for many applications. Here, we examine the behaviour and dynamics of charges fully confined on the nanometre length scale. This is accomplished using CdSe nanocrystals of controlled radius (1-2.5 nm) as prototype quantum systems. Individual electron-hole pairs are created at room temperature within these structures by photoexcitation and are probed by terahertz (THz) electromagnetic pulses. The electronic response is found to be instantaneous even for THz frequencies, in contrast to the behaviour reported in related measurements for larger nanocrystals and nanocrystal assemblies. The measured polarizability of an electron-hole pair (exciton) amounts to approximately 10(4) A(3) and scales approximately as the fourth power of the nanocrystal radius. This size dependence and the instantaneous response reflect the presence of well-separated electronic energy levels induced in the system by strong quantum-confinement effects.

  12. "Nanocrystal bilayer for tandem catalysis"

    SciTech Connect

    Yamada, Yusuke; Tsung, Chia Kuang; Huang, Wenyu; Huo, Ziyang; E.Habas, Susan E; Soejima, Tetsuro; Aliaga, Cesar E; Samorjai, Gabor A; Yang, Peidong

    2011-01-24

    Supported catalysts are widely used in industry and can be optimized by tuning the composition and interface of the metal nanoparticles and oxide supports. Rational design of metal-metal oxide interfaces in nanostructured catalysts is critical to achieve better reaction activities and selectivities. We introduce here a new class of nanocrystal tandem catalysts that have multiple metal-metal oxide interfaces for the catalysis of sequential reactions. We utilized a nanocrystal bilayer structure formed by assembling platinum and cerium oxide nanocube monolayers of less than 10 nm on a silica substrate. The two distinct metal-metal oxide interfaces, CeO2-Pt and Pt-SiO2, can be used to catalyse two distinct sequential reactions. The CeO2-Pt interface catalysed methanol decomposition to produce CO and H2, which were subsequently used for ethylene hydroformylation catalysed by the nearby Pt-SiO2 interface. Consequently, propanal was produced selectively from methanol and ethylene on the nanocrystal bilayer tandem catalyst. This new concept of nanocrystal tandem catalysis represents a powerful approach towards designing high-performance, multifunctional nanostructured catalysts

  13. Flexible Hybrid Organic-Inorganic Perovskite Memory.

    PubMed

    Gu, Chungwan; Lee, Jang-Sik

    2016-05-24

    Active research has been done on hybrid organic-inorganic perovskite materials for application to solar cells with high power conversion efficiency. However, this material often shows hysteresis, which is undesirable, shift in the current-voltage curve. The hysteresis may come from formation of defects and their movement in perovskite materials. Here, we utilize the defects in perovskite materials to be used in memory operations. We demonstrate flexible nonvolatile memory devices based on hybrid organic-inorganic perovskite as the resistive switching layer on a plastic substrate. A uniform perovskite layer is formed on a transparent electrode-coated plastic substrate by solvent engineering. Flexible nonvolatile memory based on the perovskite layer shows reproducible and reliable memory characteristics in terms of program/erase operations, data retention, and endurance properties. The memory devices also show good mechanical flexibility. It is suggested that resistive switching is done by migration of vacancy defects and formation of conducting filaments under the electric field in the perovskite layer. It is believed that organic-inorganic perovskite materials have great potential to be used in high-performance, flexible memory devices.

  14. Nanocrystals Research for Energy Efficient and Clean Energy Technologies:

    SciTech Connect

    Rosenthal, Sandra J

    2013-12-17

    Efforts centered on: nanocrystal photovoltaic fabrication, ultrafast dynamics and aberration-corrected STEM characterization of II-VI core, core/shell and alloyed nanocrystals, and fundamental investigation and applications of ultrasmall white light-emitting CdSe nanocrystal.

  15. Piezostrain tuning non-volatile 90° magnetic easy axis rotation in Co2FeAl Heusler alloy film grown on Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Zhou, Cai; Wang, Fenglong; Dunzhu, Gesang; Yao, Jinli; Jiang, Changjun

    2016-11-01

    Non-volatile electric field-based control of magnetic anisotropy in Co2FeAl/ Pb(Mg1/3Nb2/3)O3-PbTiO3 (CFA/PMN-PT) heterostructures is investigated at room temperature. The remnant magnetization response under different electric fields shows a asymmetric butterfly-like behavior; specifically, this behavior is consistent with the asymmetric butterfly-like piezostrain versus applied electric field curve. Thus electric field-induced non-volatile 90° magnetic easy axis rotation can be attributed to the piezostrain effect. Further, the result measured by rotating-angle ferromagnetic resonance demonstrates piezostrain-mediated non-volatile 90° magnetic easy axis rotation at the initial state and the two remnant polarization states after application of the poling fields of 10 and  -10 kV cm-1 turned off. The angular dependence of magnetic damping also indicates a 90° phase shift at the above mentioned three different states. Additionally, the piezostrain-mediated non-volatile stable magnetization reversal in the two directions of easy and hard magnetization axes are observed under positive and negative pulsed electric fields, which can be used to improve the performance of low-loss multiple-state memory devices.

  16. Cellulose nanocrystals: synthesis, functional properties, and applications

    PubMed Central

    George, Johnsy; Sabapathi, SN

    2015-01-01

    Cellulose nanocrystals are unique nanomaterials derived from the most abundant and almost inexhaustible natural polymer, cellulose. These nanomaterials have received significant interest due to their mechanical, optical, chemical, and rheological properties. Cellulose nanocrystals primarily obtained from naturally occurring cellulose fibers are biodegradable and renewable in nature and hence they serve as a sustainable and environmentally friendly material for most applications. These nanocrystals are basically hydrophilic in nature; however, they can be surface functionalized to meet various challenging requirements, such as the development of high-performance nanocomposites, using hydrophobic polymer matrices. Considering the ever-increasing interdisciplinary research being carried out on cellulose nanocrystals, this review aims to collate the knowledge available about the sources, chemical structure, and physical and chemical isolation procedures, as well as describes the mechanical, optical, and rheological properties, of cellulose nanocrystals. Innovative applications in diverse fields such as biomedical engineering, material sciences, electronics, catalysis, etc, wherein these cellulose nanocrystals can be used, are highlighted. PMID:26604715

  17. Intermetallic Nanocrystals: Syntheses and Catalytic Applications.

    PubMed

    Yan, Yucong; Du, Jingshan S; Gilroy, Kyle D; Yang, Deren; Xia, Younan; Zhang, Hui

    2017-02-24

    At the forefront of nanochemistry, there exists a research endeavor centered around intermetallic nanocrystals, which are unique in terms of long-range atomic ordering, well-defined stoichiometry, and controlled crystal structure. In contrast to alloy nanocrystals with no elemental ordering, it is challenging to synthesize intermetallic nanocrystals with a tight control over their size and shape. Here, recent progress in the synthesis of intermetallic nanocrystals with controllable sizes and well-defined shapes is highlighted. A simple analysis and some insights key to the selection of experimental conditions for generating intermetallic nanocrystals are presented, followed by examples to highlight the viable use of intermetallic nanocrystals as electrocatalysts or catalysts for various reactions, with a focus on the enhanced performance relative to their alloy counterparts that lack elemental ordering. Within the conclusion, perspectives on future developments in the context of synthetic control, structure-property relationships, and applications are discussed.

  18. Phase transitions and doping in semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Sahu, Ayaskanta

    Colloidal semiconductor nanocrystals are a promising technological material because their size-dependent optical and electronic properties can be exploited for a diverse range of applications such as light-emitting diodes, bio-labels, transistors, and solar cells. For many of these applications, electrical current needs to be transported through the devices. However, while their solution processability makes these colloidal nanocrystals attractive candidates for device applications, the bulky surfactants that render these nanocrystals dispersible in common solvents block electrical current. Thus, in order to realize the full potential of colloidal semiconductor nanocrystals in the next-generation of solid-state devices, methods must be devised to make conductive films from these nanocrystals. One way to achieve this would be to add minute amounts of foreign impurity atoms (dopants) to increase their conductivity. Electronic doping in nanocrystals is still very much in its infancy with limited understanding of the underlying mechanisms that govern the doping process. This thesis introduces an innovative synthesis of doped nanocrystals and aims at expanding the fundamental understanding of charge transport in these doped nanocrystal films. The list of semiconductor nanocrystals that can be doped is large, and if one combines that with available dopants, an even larger set of materials with interesting properties and applications can be generated. In addition to doping, another promising route to increase conductivity in nanocrystal films is to use nanocrystals with high ionic conductivities. This thesis also examines this possibility by studying new phases of mixed ionic and electronic conductors at the nanoscale. Such a versatile approach may open new pathways for interesting fundamental research, and also lay the foundation for the creation of novel materials with important applications. In addition to their size-dependence, the intentional incorporation of

  19. Reconfigurable and non-volatile vertical magnetic logic gates

    SciTech Connect

    Butler, J. Lee, B.; Shachar, M.; Garcia, D.; Hu, B.; Hong, J.; Amos, N.; Khizroev, S.

    2014-04-28

    In this paper, we discuss the concept and prototype fabrication of reconfigurable and non-volatile vertical magnetic logic gates. These gates consist of two input layers and a RESET layer. The RESET layer allows the structure to be used as either an AND or an OR gate, depending on its magnetization state. To prove this concept, the gates were fabricated using a multi-layered patterned magnetic media, in which three magnetic layers are stacked and exchange-decoupled via non-magnetic interlayers. We demonstrate the functionality of these logic gates by conducting atomic force microscopy and magnetic force microscopy (MFM) analysis of the multi-layered patterned magnetic media. The logic gates operation mechanism and fabrication feasibility are both validated by the MFM imaging results.

  20. Non-volatile polarization switch of magnetic domain wall velocity

    SciTech Connect

    Huang, Z.; Stolichnov, I.; Setter, N.; Bernand-Mantel, A.; Schott, Marine; Pizzini, S.; Ranno, L.; Auffret, S.; Gaudin, G.

    2015-12-21

    Controlled propagation speed of individual magnetic domains in metal channels at the room temperature is obtained via the non-volatile field effect associated with the switchable polarization of P(VDF-TrFE) (polyvinylidene fluoride-trifluoroethylene) ferroelectric polymer. Polarization domains directly written using conducting atomic force microscope probe locally accelerate/decelerate the magnetic domains in the 0.6 nm thick Co film. The change of the magnetic domain wall velocity is consistent with the magnetic anisotropy energy modulation through the polarization upward/downward orientation. Excellent retention is observed. The demonstrated local non-destructive and reversible change of magnetic properties via rewritable patterning of ferroelectric domains could be attractive for exploring the ultimate limit of miniaturization in devices based on ferromagnetic/ferroelectric bilayers.

  1. Characterization of Monomethyihydrazine (MMH) Non-Volatile Residue

    NASA Technical Reports Server (NTRS)

    Davis, Chuck; Howard, Philip M.

    2009-01-01

    The Space Shuttle program has a unique propellant purity requirement for determination of nonvolatile residue (NVR) in monomethylhydrazine (MMH). TIis requirement differs from the Military Specification procurement specification by requiring a NVR analysis with a limit of less than or equal to 10 milligrams per liter. In June 2008, a routine MMH replenishment delivery was transferred into a NASA KSC owned tanker for future delivery to the Space Shuffle pad MMH storage tank. Per Shuffle standard operating procedure, the receiving tanker was sampled and analyzed for purity and surprisingly it failed the Shuttle use NVR specification limit. Detailed examination of the NVR revealed that it was fundamentally different than the typical MMH NVR. This paper will examine various aspects of NVR determination in MMH and the analytical characterization processes used to identify the NVR.

  2. Surface Structure of Aerobically Oxidized Diamond Nanocrystals

    DTIC Science & Technology

    2014-10-27

    distribution is unlimited. Surface Structure of Aerobically Oxidized Diamond Nanocrystals The views, opinions and/or findings contained in this report...2211 diamond nanocrystals, REPORT DOCUMENTATION PAGE 11. SPONSOR/MONITOR’S REPORT NUMBER(S) 10. SPONSOR/MONITOR’S ACRONYM(S) ARO 8. PERFORMING...Room 254, Mail Code 8725 New York, NY 10027 -7922 ABSTRACT Surface Structure of Aerobically Oxidized Diamond Nanocrystals Report Title We investigate

  3. Towards Terabit Memories

    NASA Astrophysics Data System (ADS)

    Hoefflinger, Bernd

    Memories have been the major yardstick for the continuing validity of Moore's law. In single-transistor-per-Bit dynamic random-access memories (DRAM), the number of bits per chip pretty much gives us the number of transistors. For decades, DRAM's have offered the largest storage capacity per chip. However, DRAM does not scale any longer, both in density and voltage, severely limiting its power efficiency to 10 fJ/b. A differential DRAM would gain four-times in density and eight-times in energy. Static CMOS RAM (SRAM) with its six transistors/cell is gaining in reputation because it scales well in cell size and operating voltage so that its fundamental advantage of speed, non-destructive read-out and low-power standby could lead to just 2.5 electrons/bit in standby and to a dynamic power efficiency of 2aJ/b. With a projected 2020 density of 16 Gb/cm², the SRAM would be as dense as normal DRAM and vastly better in power efficiency, which would mean a major change in the architecture and market scenario for DRAM versus SRAM. Non-volatile Flash memory have seen two quantum jumps in density well beyond the roadmap: Multi-Bit storage per transistor and high-density TSV (through-silicon via) technology. The number of electrons required per Bit on the storage gate has been reduced since their first realization in 1996 by more than an order of magnitude to 400 electrons/Bit in 2010 for a complexity of 32Gbit per chip at the 32 nm node. Chip stacking of eight chips with TSV has produced a 32GByte solid-state drive (SSD). A stack of 32 chips with 2 b/cell at the 16 nm node will reach a density of 2.5 Terabit/cm². Non-volatile memory with a density of 10 × 10 nm²/Bit is the target for widespread development. Phase-change memory (PCM) and resistive memory (RRAM) lead in cell density, and they will reach 20 Gb/cm² in 2D and higher with 3D chip stacking. This is still almost an order-of-magnitude less than Flash. However, their read-out speed is ~10-times faster, with as yet

  4. Germanium Nanocrystal Solar Cells

    NASA Astrophysics Data System (ADS)

    Holman, Zachary Charles

    Greenhouse gas concentrations in the atmosphere are approaching historically unprecedented levels from burning fossil fuels to meet the ever-increasing world energy demand. A rapid transition to clean energy sources is necessary to avoid the potentially catastrophic consequences of global warming. The sun provides more than enough energy to power the world, and solar cells that convert sunlight to electricity are commercially available. However, the high cost and low efficiency of current solar cells prevent their widespread implementation, and grid parity is not anticipated to be reached for at least 15 years without breakthrough technologies. Semiconductor nanocrystals (NCs) show promise for cheap multi-junction photovoltaic devices. To compete with photovoltaic materials that are currently commercially available, NCs need to be inexpensively cast into dense thin films with bulk-like electrical mobilities and absorption spectra that can be tuned by altering the NC size. The Group II-VI and IV-VI NC communities have had some success in achieving this goal by drying and then chemically treating colloidal particles, but the more abundant and less toxic Group IV NCs have proven more challenging. This thesis reports thin films of plasma-synthesized Ge NCs deposited using three different techniques, and preliminary solar cells based on these films. Germanium tetrachloride is dissociated in the presence of hydrogen in a nonthermal plasma to nucleate Ge NCs. Transmission electron microscopy and X-ray diffraction indicate that the particles are nearly monodisperse (standard deviations of 10-15% the mean particle diameter) and the mean diameter can be tuned from 4-15 nm by changing the residence time of the Ge NCs in the plasma. In the first deposition scheme, a Ge NC colloid is formed by reacting nanocrystalline powder with 1-dodecene and dispersing the functionalized NCs in a solvent. Films are then formed on substrates by drop-casting the colloid and allowing it to dry

  5. Area-efficient nonvolatile carry chain based on pass-transistor/atom-switch hybrid logic

    NASA Astrophysics Data System (ADS)

    Bai, Xu; Tsuji, Yukihide; Sakamoto, Toshitsugu; Morioka, Ayuka; Miyamura, Makoto; Tada, Munehiro; Banno, Naoki; Okamoto, Koichiro; Iguchi, Noriyuki; Hada, Hiromitsu

    2016-04-01

    For the first time, an area-efficient nonvolatile carry chain combining look-up tables and a pass-transistor-logic-based adder is newly developed using complementary atom switches without additional CMOS circuits. A proposed tristate switch composed of three pairs of complementary atom switches selects one of “0”, “1”, and the “carry_in” signal as the input of a common multiplexer for both a look-up table and an adder. The developed nonvolatile carry chain achieves the reductions of 20% area, 17% delay, and 17% power consumption, respectively, in comparison with a conventional nonvolatile carry chain using dedicated CMOS gates.

  6. Quantitative tunneling spectroscopy of nanocrystals

    SciTech Connect

    First, Phillip N; Whetten, Robert L; Schaaff, T Gregory

    2007-05-25

    The proposed goals of this collaborative work were to systematically characterize the electronic structure and dynamics of 3-dimensional metal and semiconducting nanocrystals using scanning tunneling microscopy/spectroscopy (STM/STS) and ballistic electron emission spectroscopy (BEES). This report describes progress in the spectroscopic work and in the development of methods for creating and characterizing gold nanocrystals. During the grant period, substantial effort also was devoted to the development of epitaxial graphene (EG), a very promising materials system with outstanding potential for nanometer-scale ballistic and coherent devices ("graphene" refers to one atomic layer of graphitic, sp2 -bonded carbon atoms [or more loosely, few layers]). Funding from this DOE grant was critical for the initial development of epitaxial graphene for nanoelectronics

  7. Lead sulphide nanocrystal photodetector technologies

    NASA Astrophysics Data System (ADS)

    Saran, Rinku; Curry, Richard J.

    2016-02-01

    Light detection is the underlying principle of many optoelectronic systems. For decades, semiconductors including silicon carbide, silicon, indium gallium arsenide and germanium have dominated the photodetector industry. They can show excellent photosensitivity but are limited by one or more aspects, such as high production cost, high-temperature processing, flexible substrate incompatibility, limited spectral range or a requirement for cryogenic cooling for efficient operation. Recently lead sulphide (PbS) nanocrystals have emerged as one of the most promising new materials for photodetector fabrication. They offer several advantages including low-cost manufacturing, solution processability, size-tunable spectral sensitivity and flexible substrate compatibility, and they have achieved figures of merit outperforming conventional photodetectors. We review the underlying concepts, breakthroughs and remaining challenges in photodetector technologies based on PbS nanocrystals.

  8. The Surface Chemistry of Metal Chalcogenide Nanocrystals

    NASA Astrophysics Data System (ADS)

    Anderson, Nicholas Charles

    The surface chemistry of metal chalcogenide nanocrystals is explored through several interrelated analytical investigations. After a brief discussion of the nanocrystal history and applications, molecular orbital theory is used to describe the electronic properties of semiconductors, and how these materials behave on the nanoscale. Quantum confinement plays a major role in dictating the optical properties of metal chalcogenide nanocrystals, however surface states also have an equally significant contribution to the electronic properties of nanocrystals due to the high surface area to volume ratio of nanoscale semiconductors. Controlling surface chemistry is essential to functionalizing these materials for biological imaging and photovoltaic device applications. To better understand the surface chemistry of semiconducting nanocrystals, three competing surface chemistry models are presented: 1.) The TOPO model, 2.) the Non-stoichiometric model, and 3.) the Neutral Fragment model. Both the non-stoichiometric and neutral fragment models accurately describe the behavior of metal chalcogenide nanocrystals. These models rely on the covalent bond classification system, which divides ligands into three classes: 1.) X-type, 1-electron donating ligands that balance charge with excess metal at the nanocrystal surface, 2.) L-type, 2-electron donors that bind metal sites, and 3.) Z-type, 2-electron acceptors that bind chalcogenide sites. Each of these ligand classes is explored in detail to better understand the surface chemistry of metal chalcogenide nanocrystals. First, chloride-terminated, tri-n-butylphosphine (Bu 3P) bound CdSe nanocrystals were prepared by cleaving carboxylate ligands from CdSe nanocrystals with chlorotrimethylsilane in Bu3P solution. 1H and 31P{1H} nuclear magnetic resonance spectra of the isolated nanocrystals allowed assignment of distinct signals from several free and bound species, including surface-bound Bu3P and [Bu3P-H]+[Cl]- ligands as well as a Bu

  9. Structure Map for Embedded Binary Alloy Nanocrystals

    SciTech Connect

    Yuan, C.W.; Shin, S.J.; Liao, C.Y.; Guzman, J.; Stone, P.R.; Watanabe, M.; Ager III, J.W.; Haller, E.E.; Chrzan, D.C.

    2008-09-20

    The equilibrium structure of embedded nanocrystals formed from strongly segregating binary-alloys is considered within a simple thermodynamic model. The model identifies two dimensionlessinterface energies that dictate the structure, and allows prediction of the stable structure for anychoice of these parameters. The resulting structure map includes three distinct nanocrystal mor-phologies: core/shell, lobe/lobe, and completely separated spheres.

  10. Hollow nanocrystals and method of making

    DOEpatents

    Alivisatos, A. Paul; Yin, Yadong; Erdonmez, Can Kerem

    2011-07-05

    Described herein are hollow nanocrystals having various shapes that can be produced by a simple chemical process. The hollow nanocrystals described herein may have a shell as thin as 0.5 nm and outside diameters that can be controlled by the process of making.

  11. Pinned emission from ultrasmall cadmium selenide nanocrystals.

    PubMed

    Dukes, Albert D; Schreuder, Michael A; Sammons, Jessica A; McBride, James R; Smith, Nathanael J; Rosenthal, Sandra J

    2008-09-28

    We report pinning of the emission spectrum in ultrasmall CdSe nanocrystals with a diameter of 1.7 nm and smaller. It was observed that the first emission feature ceased to blueshift once the band edge absorption reached 420 nm, though the band edge absorption continued to blueshift with decreasing nanocrystal diameter.

  12. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlam, Michael C; Alivisatos, A. Paul

    2014-03-25

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  13. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2010-04-13

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  14. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C; Alivisatos, A. Paul

    2014-02-11

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  15. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, Paul A.

    2015-11-10

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit tight of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  16. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2015-06-23

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  17. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2011-09-27

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  18. Electronic displays using optically pumped luminescent semiconductor nanocrystals

    DOEpatents

    Weiss, Shimon; Schlamp, Michael C.; Alivisatos, A. Paul

    2005-03-08

    A multicolor electronic display is based on an array of luminescent semiconductor nanocrystals. Nanocrystals which emit light of different colors are grouped into pixels. The nanocrystals are optically pumped to produce a multicolor display. Different sized nanocrystals are used to produce the different colors. A variety of pixel addressing systems can be used.

  19. Magnetic domain-wall racetrack memory.

    PubMed

    Parkin, Stuart S P; Hayashi, Masamitsu; Thomas, Luc

    2008-04-11

    Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of approximately 10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.

  20. Synthesis and characterization of embedded germanium nanocrystals

    NASA Astrophysics Data System (ADS)

    Xu, Qing

    Isotopically pure Ge nanocrystals have been synthesized by ion implantation followed by thermal annealing in amorphous silica and crystalline sapphire matrix. The structure, and the mechanical and thermal properties of the two systems are studied and compared. Ge cluster nucleation during implantation is observed in as-implanted silica samples. It results in the wide size distribution observed after thermal annealing. Theoretical calculations predict that if the nucleation during implantation can be suppressed, a much narrower size distribution is achievable. As-grown Ge nanocrystals are under large compressive stress, 1.2GPa for nanocrystals embedded in silica, and 4GPa for those embedded in sapphire. The stress can be gradually relieved by vapor etching, liberating the nanocrystals from the matrix as well as post-growth thermal treatments. One of the main sources of the stress observed in the sapphire system is the volume expansion of Ge clusters in the liquid/solid phase transformation which occurs during the cooling process from annealing temperature to room temperature, as the density of liquid Ge is larger by 4.6% than that of solid Ge. The large stress and damage in the sapphire matrix lead to a unique double-peak size distribution of the Ge nanocrystals. However, the in situ transmission electron microscopy (TEM) experiments indicate that the Ge nanocrystals embedded in silica are already in their solid phase at the annealing temperature. Therefore, the stress originates from other sources. Vapor etching with HF solutions enables a gradual exposure of embedded Ge nanocrystals in SiO2, while the liquid etching in HF solution leaves fully liberated Ge nanocrystals loosely packed on the Si substrate. Transfer of liberated Ge nanocrystals to other surfaces is achieved by solution dispersion and subsequent evaporation. The patterning of nanocrystals has been achieved by a combination of lithography, coimplantation and electron irradiation. The latter one will

  1. Memory functions of magnetic skyrmions

    NASA Astrophysics Data System (ADS)

    Koshibae, Wataru; Kaneko, Yoshio; Iwasaki, Junichi; Kawasaki, Masashi; Tokura, Yoshinori; Nagaosa, Naoto

    2015-05-01

    We study, by microsimulation on the chiral magnets, the elementary functions of magnetic skyrmions and the design principles of skyrmionic memory devices. The external stimuli, such as local heating, magnetic field, electric field and electric current, trigger the creation and annihilation of the skyrmion. These procedures, corresponding to the writing and erasing operations, are achieved typically within of the order of nano or pico seconds. We also examine the current driven motion of the skyrmions and find that the gyro-dynamics, which is induced by the topological nature of the skyrmion, leads to the variety of useful functions including the remarkable enhancement of the spin-transfer-torque effect. These features are shown to be advantageous for (a) high-density data-storage, (b) nonvolatile memory, and (c) ultra-low current and energy cost manipulation.

  2. Transparent Memory For Harsh Electronics

    NASA Astrophysics Data System (ADS)

    Ho, C. H.; Retamal, J. R. Durán; Yang, P. K.; Lee, C. P.; Tsai, M. L.; Kang, C. F.; He-Hau, Jr.

    2017-03-01

    As a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance of RRAM is material-dependent, and therefore the materials used must be chosen carefully in order to avoid instabilities and performance degradation caused by the detrimental effects arising from environmental gases and ionizing radiation. In this work, we demonstrate that AlN-based RRAM displays excellent performance and environmental stability, with no significant degradation to the resistance ratio over a 100-cycle endurance test. Moreover, transparent RRAM (TRRAM) based on AlN also performs reliably under four different harsh environmental conditions and 2 MeV proton irradiation fluences, ranging from 1011 to 1015 cm‑2. These findings not only provide a guideline for TRRAM design, but also demonstrate the promising applicability of AlN TRRAM for future transparent harsh electronics.

  3. Copper Selenide Nanocrystals for Photothermal Therapy

    PubMed Central

    Hessel, Colin M.; Pattani, Varun; Rasch, Michael; Panthani, Matthew G.; Koo, Bonil; Tunnell, James W.; Korgel, Brian A.

    2011-01-01

    Ligand-stabilized copper selenide (Cu2−xSe) nanocrystals, approximately 16 nm in diameter, were synthesized by a colloidal hot injection method and coated with amphiphilic polymer. The nanocrystals readily disperse in water and exhibit strong near infrared (NIR) optical absorption with a high molar extinction coefficient of 7.7 × 107 cm−1 M−1 at 980 nm. When excited with 800 nm light, the Cu2−xSe nanocrystals produce significant photothermal heating with a photothermal transduction efficiency of 22%, comparable to nanorods and nanoshells of gold (Au). In vitro photothermal heating of Cu2−xSe nanocrystals in the presence of human colorectal cancer cell (HCT-116) led to cell destruction after 5 minutes of laser irradiation at 33 W/cm2, demonstrating the viabilitiy of Cu2−xSe nanocrystals for photothermal therapy applications. PMID:21553924

  4. Copper selenide nanocrystals for photothermal therapy.

    PubMed

    Hessel, Colin M; Pattani, Varun P; Rasch, Michael; Panthani, Matthew G; Koo, Bonil; Tunnell, James W; Korgel, Brian A

    2011-06-08

    Ligand-stabilized copper selenide (Cu(2-x)Se) nanocrystals, approximately 16 nm in diameter, were synthesized by a colloidal hot injection method and coated with amphiphilic polymer. The nanocrystals readily disperse in water and exhibit strong near-infrared (NIR) optical absorption with a high molar extinction coefficient of 7.7 × 10(7) cm(-1) M(-1) at 980 nm. When excited with 800 nm light, the Cu(2-x)Se nanocrystals produce significant photothermal heating with a photothermal transduction efficiency of 22%, comparable to nanorods and nanoshells of gold (Au). In vitro photothermal heating of Cu(2-x)Se nanocrystals in the presence of human colorectal cancer cell (HCT-116) led to cell destruction after 5 min of laser irradiation at 33 W/cm(2), demonstrating the viabilitiy of Cu(2-x)Se nanocrystals for photothermal therapy applications.

  5. Measuring the Valence of Nanocrystal Surfaces

    SciTech Connect

    Owen, Jonathan Scharle

    2016-11-30

    The goal of this project is to understand and control the interplay between nanocrystal stoichiometry, surface ligand binding and exchange, and the optoelectronic properties of semiconductor nanocrystals in solution and in thin solid films. We pursued three research directions with this goal in mind: 1) We characterized nanocrystal stoichiometry and its influence on the binding of L-type and X-type ligands, including the thermodynamics of binding and the kinetics of ligand exchange. 2) We developed a quantitative understanding of the relationship between surface ligand passivation and photoluminescence quantum yield. 3) We developed methods to replace the organic ligands on the nanocrystal with halide ligands and controllably deposit these nanocrystals into thin films, where electrical measurements were used to investigate the electrical transport and internanocrystal electronic coupling.

  6. Exploiting the colloidal nanocrystal library to construct electronic devices

    NASA Astrophysics Data System (ADS)

    Choi, Ji-Hyuk; Wang, Han; Oh, Soong Ju; Paik, Taejong; Sung, Pil; Sung, Jinwoo; Ye, Xingchen; Zhao, Tianshuo; Diroll, Benjamin T.; Murray, Christopher B.; Kagan, Cherie R.

    2016-04-01

    Synthetic methods produce libraries of colloidal nanocrystals with tunable physical properties by tailoring the nanocrystal size, shape, and composition. Here, we exploit colloidal nanocrystal diversity and design the materials, interfaces, and processes to construct all-nanocrystal electronic devices using solution-based processes. Metallic silver and semiconducting cadmium selenide nanocrystals are deposited to form high-conductivity and high-mobility thin-film electrodes and channel layers of field-effect transistors. Insulating aluminum oxide nanocrystals are assembled layer by layer with polyelectrolytes to form high-dielectric constant gate insulator layers for low-voltage device operation. Metallic indium nanocrystals are codispersed with silver nanocrystals to integrate an indium supply in the deposited electrodes that serves to passivate and dope the cadmium selenide nanocrystal channel layer. We fabricate all-nanocrystal field-effect transistors on flexible plastics with electron mobilities of 21.7 square centimeters per volt-second.

  7. Non-volatile taste components of several cultivated mushrooms.

    PubMed

    Li, Wen; Gu, Zhen; Yang, Yan; Zhou, Shuai; Liu, Yanfang; Zhang, Jingsong

    2014-01-15

    Five species of dried mushrooms are commercially available in China, namely Agrocybe cylindracea, Pleurotus cystidiosus, Agaricus blazei, Pleurotus eryngii, and Coprinus comatus, and their nonvolatile taste components were studied. Trehalose (12.23-301.63mg/g) and mannitol (12.37-152.11mg/g) were considered as the major mushroom sugar/polyol in the five test species. The total free amino acid levels ranged from 4.09 to 22.73mg/g. MSG-like components contents ranged from 0.97 to 4.99mg/g. 5'-Nucleotide levels ranged from 1.68mg/g in P. eryngii to 3.79mg/g in C. comatus. Fumaric acid (96.11mg/g) in P. cystidiosus were significantly higher compared with the other mushrooms, and citric acid (113.13mg/g), as the highest of any organic acid among the five mushrooms, were found in A. blazei. Equivalent umami concentrations values in these five test mushrooms ranged from 11.19 to 88.37g/100g dry weight. A. blazei, C.comatus and A. cylindracea possessed highly strong umami taste.

  8. A high sensitivity real-time NVR monitor. [Nonvolatile Residue

    NASA Technical Reports Server (NTRS)

    Bowers, William D.; Chuan, R. L.

    1992-01-01

    The use of a temperature-controlled 200-MHz SAW resonator piezoelectric mass microbalance to monitor the mass of nonvolatile residue (NVR) deposited on its surface in real time is reported. The fundamental frequency of this device is mainly dependent on the configuration of the transducers and not on the thickness of the substrate. Therefore, higher operating frequencies can be achieved without reducing the thickness of the crystal. The real-time instrument was integrated onto a conventional stainless steel NVR plate and operated flawlessly over a 14-d period at Kennedy Space Center and successfully measured less than 1 ng/sq cm d NVR contamination. Contamination episodes detected by the instrument were correlated with scheduled activities on the test stand. Under the assumption of a baseline noise level of +/- 2 Hz, the absolute mass lower limit of detection would be 0.065 ng/sq cm. This would enable the detection of a daily NVR deposition rate of less than 0.1 ng/sq cm d.

  9. Non-volatile, solid state bistable electrical switch

    NASA Technical Reports Server (NTRS)

    Williams, Roger M. (Inventor)

    1994-01-01

    A bistable switching element is made of a material whose electrical resistance reversibly decreases in response to intercalation by positive ions. Flow of positive ions between the bistable switching element and a positive ion source is controlled by means of an electrical potential applied across a thermal switching element. The material of the thermal switching element generates heat in response to electrical current flow therethrough, which in turn causes the material to undergo a thermal phase transition from a high electrical resistance state to a low electrical resistance state as the temperature increases above a predetermined value. Application of the electrical potential in one direction renders the thermal switching element conductive to pass electron current out of the ion source. This causes positive ions to flow from the source into the bistable switching element and intercalate the same to produce a non-volatile, low resistance logic state. Application of the electrical potential in the opposite direction causes reverse current flow which de-intercalates the bistable logic switching element and produces a high resistance logic state.

  10. Optoelectronic sensitization of carbon nanotubes by CdTe nanocrystals

    NASA Astrophysics Data System (ADS)

    Zebli, B.; Vieyra, H. A.; Carmeli, I.; Hartschuh, A.; Kotthaus, J. P.; Holleitner, A. W.

    2009-05-01

    We investigate the photoconductance of single-walled carbon nanotube-nanocrystal hybrids. The nanocrystals are bound to the nanotubes via molecular recognition. We find that the photoconductance of the hybrids can be adjusted by the absorption characteristics of the nanocrystals. In addition, the photoconductance of the hybrids surprisingly exhibits a slow time constant of about 1 ms after excitation of the nanocrystals. The data are consistent with a bolometrically induced current increase in the nanotubes caused by photon absorption in the nanocrystals.

  11. Carbon Nanofibers Synthesized on Selective Substrates for Nonvolatile Memory and 3D Electronics

    NASA Technical Reports Server (NTRS)

    Kaul, Anupama B.; Khan, Abdur R.

    2011-01-01

    A plasma-enhanced chemical vapor deposition (PECVD) growth technique has been developed where the choice of starting substrate was found to influence the electrical characteristics of the resulting carbon nanofiber (CNF) tubes. It has been determined that, if the tubes are grown on refractory metallic nitride substrates, then the resulting tubes formed with dc PECVD are also electrically conducting. Individual CNFs were formed by first patterning Ni catalyst islands using ebeam evaporation and liftoff. The CNFs were then synthesized using dc PECVD with C2H2:NH3 = [1:4] at 5 Torr and 700 C, and approximately equal to 200-W plasma power. Tubes were grown directly on degenerately doped silicon <100> substrates with resistivity rho approximately equal to 1-5 meterohm-centimeter, as well as NbTiN. The approximately equal to 200-nanometer thick refractory NbTiN deposited using magnetron sputtering had rho approximately equal to 113 microohm-centimeter and was also chemically compatible with CNF synthesis. The sample was then mounted on a 45 beveled Al holder, and placed inside a SEM (scanning electron microscope). A nanomanipulator probe stage was placed inside the SEM equipped with an electrical feed-through, where tungsten probes were used to make two-terminal electrical measurements with an HP 4156C parameter analyzer. The positive terminal nanoprobe was mechanically manipulated to physically contact an individual CNF grown directly on NbTiN as shown by the SEM image in the inset of figure (a), while the negative terminal was grounded to the substrate. This revealed the tube was electrically conductive, although measureable currents could not be detected until approximately equal to 6 V, after which point current increased sharply until compliance (approximately equal to 50 nA) was reached at approximately equal to 9.5 V. A native oxide on the tungsten probe tips may contribute to a tunnel barrier, which could be the reason for the suppressed transport at low biases. Currents up to approximately 100 nA could be cycled, which are likely to propagate via the tube surface, or sidewalls, rather than the body, which is shown by the I-V in figure (a). Electrical conduction via the sidewalls is a necessity for dc NEMS (nanoelectromechanical system) applications, more so than for the field emission applications of such tubes. During the tests, high conductivity was expected, because both probes were shorted to the substrate, as shown by curve 1 in the I-V characteristic in figure (b). When a tube grown on NbTiN was probed, the response was similar to the approximately equal to 100 nA and is represented by curve 2 in figure (b), which could be cycled and propagated via the tube surface or the sidewalls. However, no measureable currents for the tube grown directly on Si were observed as shown by curve 3 in figure (b), even after testing over a range of samples. This could arise from a dielectric coating on the sidewalls for tubes on Si. As a result of the directional nature of ion bombardment during dc PECVD, Si from the substrate is likely re-sputtered and possibly coats the sidewalls.

  12. High temperature polyimide containing anthracene moiety and its structure, interface, and nonvolatile memory behavior.

    PubMed

    Park, Samdae; Kim, Kyungtae; Kim, Dong Min; Kwon, Wonsang; Choi, Junman; Ree, Moonhor

    2011-03-01

    A high temperature polyimide bearing anthracene moieties, poly(3,3'-di(9-anthracenemethoxy)-4,4'-biphenylene hexafluoroisopropylidenediphthalimide) (6F-HAB-AM PI) was synthesized. The polymer exhibits excellent thermal stability up to around 410 °C. This polymer is amorphous but orients preferentially in the plane of nanoscale thin films. In device fabrications of its nanoscale thin films with metal top and bottom electrodes, no diffusion of the metal atoms or ions between the polymer and electrodes was found; however, the aluminum bottom electrode had somewhat undergone oxide layer (about 1.2 nm thick) formation at the surface during the post polymer layer formation process, which was confirmed to have no significant influence on the device performance. The polymer thin film exhibited excellent unipolar and bipolar switching behaviors over a very small voltage range, less than ±2 V. Further, the PI films show repeatable writing, reading, and erasing ability with long reliability and high ON/OFF current ratio (up to 10(7)) in air ambient conditions as well as even at temperatures up to 200 °C.

  13. Ferroelectric/electrode interfaces: Polarization switching and reliability of PZT capacitors in nonvolatile memories

    NASA Astrophysics Data System (ADS)

    Chen, Ye (Mike)

    The objective of this work was to investigate how the interface between electrode and PZT influences the PZT capacitor reliability. In order to conduct a well controlled experiment only the top-electrode PZT film interface was modified to study its effect on switching characteristics (i.e. hysteresis loop), voltage switching endurance and polarization retention of state of the art MOCVD grown film (nominally identical). The polycrystalline PZT film (50 -- 90 nm thick) are dominantly tetragonal with small fractions of the rhombohedral phase. XPS analyses of the as-deposited PZT film found the existence of a Pb-rich carbonate surface layer on all PZT film provided by industrial collaborators. Using materials characterizations such as in-situ XPS and ARXPS in tandem with electrical measurements it was determined that the Pb-rich surface layer appears to be an engineered sacrificial layer, which is beneficial in maximizing the switchable polarization and in improving the endurance and opposite-state retention behavior of PZT based FRAM capacitors with Pt electrode. This is because the excess Pb on the PZT surface and the Pb in the surface PZT reacts readily with the Pt during the Pt top electrode deposition creating a Pb-deficient non-ferroelectric interface layer between the top electrode and the PZT film. ARXPS analyses showed that this defective layer was approximately one nanometer thick and this is consistent with the hysteresis loop measurements that indicated a similar interface layer thickness. Inferior switching endurance and polarization retention was found in PZT film with an engineered initial thicker defective interface layer (via a HNO3-clean of the PZT surface prior to the top electrode deposition). This could be due to the fact that this defective interface layer may have thickened during the voltage cycling and/or retention bake. The thickening could be caused by greater carrier trapping and/or interface reaction between the Pb and the Pt. This thickening effectively stretched out the hysteresis curve and decreased remanent polarization that can be measured. To further investigate the interface effect on the switching phenomena and ferroelectric reliability, a monolayer HfO2 interface layer (experimentally determined optimal thickness) was inserted between the Pt top electrode and the PZT film by depositing the HfO2 monolayer coat by atomic layer deposition prior to room temperature Pt electrode deposition. Materials and electrical measurements showed that most of the applied electrical field was lost over this engineered interface layer (lower dielectric material) if its thickness was greater than 5 nanometer, effectively eliminating the switching phenomena. However, PZT capacitor with the monolayer HfO2 coat showed improved switching endurance and polarization retention. This is consistent with the preceding discussion because the engineering HfO 2 interface layer may have prevented the thickening of the interface layer during cycling and retention bake. Lastly, it was determined that the superior switching characteristics and reliability found in nominally identical PZT film with IrO2 top electrode was due to the inert chemical interface between the PZT and the top electrode. In-situ XPS analyses did not find any chemical reaction between the Pb in PZT surface and the IrO2 during the simulated IrO2 deposition. This is consistent with the higher switching polarization and greater voltage switching endurance found in PZT film with IrO2 top electrode.

  14. Laser Fabrication of Polymer Ferroelectric Nanostructures for Nonvolatile Organic Memory Devices.

    PubMed

    Martínez-Tong, Daniel E; Rodríguez-Rodríguez, Álvaro; Nogales, Aurora; García-Gutiérrez, Mari-Cruz; Pérez-Murano, Francesc; Llobet, Jordi; Ezquerra, Tiberio A; Rebollar, Esther

    2015-09-09

    Polymer ferroelectric laser-induced periodic surface structures (LIPSS) have been prepared on ferroelectric thin films of a poly(vinylidene fluoride-trifluoroethylene) copolymer. Although this copolymer does not absorb light at the laser wavelength, LIPSS on the copolymer can be obtained by forming a bilayer with other light-absorbing polymers. The ferroelectric nature of the structured bilayer was proven by piezoresponse force microscopy measurements. Ferroelectric hysteresis was found on both the bilayer and the laser-structured bilayer. We show that it is possible to write ferroelectric information at the nanoscale. The laser-structured ferroelectric bilayer showed an increase in the information storage density of an order of magnitude, in comparison to the original bilayer.

  15. Nonvolatile and Cryogenic-compatible Quantum Memory Devices (QuMEM)

    DTIC Science & Technology

    2016-06-01

    generation/diffusion Fast time-scale simulations of hetero- structures with many atoms requires demand on HPC resources (e.g., to perform molecular...integration of atomic crystals that have ferroelectric/magnetic properties (Figure 55). Such structures can be used for achieving the desired spin...40 6.4 NIOBIUM-BASED DEVICES INCORPORATING ATOMIC LAYER DEPOSITION PROCESSES

  16. Unipolar resistive switching behavior of amorphous YCrO{sub 3} films for nonvolatile memory applications

    SciTech Connect

    Sharma, Yogesh E-mail: rkatiyar@uprrp.edu; Misra, Pankaj; Katiyar, Ram S. E-mail: rkatiyar@uprrp.edu

    2014-08-28

    Amorphous YCrO{sub 3} (YCO) films were prepared on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate by pulsed laser deposition in order to investigate resistive switching (RS) phenomenon. The Pt/YCO/Pt device showed stable unipolar RS with resistance ratio of ∼10{sup 5} between low and high resistance states, excellent endurance and retention characteristics, as well as, non-overlapping switching voltages with narrow dispersions. Based on the x-ray photoelectron spectroscopy and temperature dependent switching characteristics, observed RS was mainly ascribed to the oxygen vacancies. Moreover, current-voltage characteristics of the device in low and high resistance states were described by Ohmic and trap controlled space–charge limited conduction mechanisms, respectively.

  17. Floating-gated memory based on carbon nanotube field-effect transistors with Si floating dots

    NASA Astrophysics Data System (ADS)

    Seike, Kohei; Fujii, Yusuke; Ohno, Yasuhide; Maehashi, Kenzo; Inoue, Koichi; Matsumoto, Kazuhiko

    2014-01-01

    We have fabricated a carbon nanotube field-effect transistor (CNTFET)-based nonvolatile memory device with Si floating dots. The electrical characteristics of this memory device were compared with those of devices with a HfO2 charge storage layer or Au floating dots. For a sweep width of 6 V, the memory window of the devices with the Si floating dots increased twofold as compared with that of the devices with the HfO2 layer. Moreover, the retention characteristics revealed that, for the device with the Au floating dots, the off-state had almost the same current as the on-state at the 400th s. However, the devices with the Si floating dots had longer-retention characteristics. The results indicate that CNTFET-based devices with Si floating dots are promising candidates for low-power consumption nonvolatile memory devices.

  18. Investigation of quantum confinement in silicon and germanium semiconductor nanocrystals and their application in photonic devices

    NASA Astrophysics Data System (ADS)

    Delgado, Gildardo Rios

    1997-09-01

    A series of coordinated optical experiments were instrumental in developing a fundamental understanding of the optical and electronic properties of indirect energy gap nanocrystals. This dissertation points out critical interpretations in this new field. Nanocrystals represent a novel form of crystalline materials which have captured much attention due to their enhanced optical and electronic properties. Most commonly used semiconductors have band gap energies in the infrared to near infrared regions which make them undesirable for many optoelectronic devices. However, in nanocrystals theoretical models confirm that quantum confinement effects provide energy levels which allow for visible photoluminescence (PL). Quantum confinement effects enable indirect band gap semiconductors to become efficient visible light emitters. Optical results presented in this dissertation indicate that in the case of Si and Ge nanocrystals when the structures are on the order of 2 and 2-10 nanometers respectively, quantum confined energy levels become available that allow for efficient blue luminescence. Furthermore, results on nanocrystalline Si and Ge and comparison with theoretical models clearly demonstrate that efficient photoluminescence (PL) results from quantum confinement effects where the critical features are the size and the shape of nanostructures, and the surface termination. Silicon and germanium nanocrystals enable many advanced optoelectronic devices such as flat panel displays and optical memories. In this dissertation, I will discuss how Si and Ge nanocrystals were used to fabricate low-cost and easily processed blue electroluminescent devices. The active EL material consists of Si or Ge nanocrystals embedded in various host matrices such as polyvinylcarbazole (PVK) and other organic polymers. Major advantages of this composite material system are the ease of producing high quality, thin, conformal EL films. Several device configurations were used that rely on

  19. Conditions of steady switching in phase-transition memory cells

    SciTech Connect

    Popov, A. I. Salnikov, S. M.; Anufriev, Yu. V.

    2015-04-15

    Three types of non-volatile memory cells of different designs based on phase transitions are developed and implemented. The effect of the design features of the cells and their active-region sizes on the switching characteristics and normal operation of the cells is considered as a whole. The causes of failure of the cells are analyzed from the obtained series of scanning electron images upon level-by-level etching of the samples. It is shown that the cell design is the most critical factor from the viewpoint of switching to the high-resistance state. The causes of this fact are analyzed and the criterion for providing the steady operation of cells of non-volatile memory based on phase transitions is formulated.

  20. Quantum theory of electroabsorption in semiconductor nanocrystals.

    PubMed

    Tepliakov, Nikita V; Leonov, Mikhail Yu; Baranov, Alexander V; Fedorov, Anatoly V; Rukhlenko, Ivan D

    2016-01-25

    We develop a simple quantum-mechanical theory of interband absorption by semiconductor nanocrystals exposed to a dc electric field. The theory is based on the model of noninteracting electrons and holes in an infinitely deep quantum well and describes all the major features of electroabsorption, including the Stark effect, the Franz-Keldysh effect, and the field-induced spectral broadening. It is applicable to nanocrystals of different shapes and dimensions (quantum dots, nanorods, and nanoplatelets), and will prove useful in modeling and design of electrooptical devices based on ensembles of semiconductor nanocrystals.

  1. Size quantization in Cu2Se nanocrystals

    NASA Astrophysics Data System (ADS)

    Govindraju, S.; Kalenga, M. P.; Airo, M.; Moloto, M. J.; Sikhwivhilu, L. M.; Moloto, N.

    2014-12-01

    Herein we report on the synthesis of size quantized copper selenide nanocrystals via the colloidal method. Different colours of the sample were obtained at different time intervals indicative of the sizes of the nanocrystals. The absorption band edges were blue-shifted from bulk indicative of quantum confinement. This was corroborated by the TEM results that showed very small particles ranging from 2 nm to 7 nm. This work therefore shows a phenomenon readily observed in cadmium chalcogenide nanocrystals but has never been reported for copper based chalcogenides.

  2. Controlling upconversion nanocrystals for emerging applications

    NASA Astrophysics Data System (ADS)

    Zhou, Bo; Shi, Bingyang; Jin, Dayong; Liu, Xiaogang

    2015-11-01

    Lanthanide-doped upconversion nanocrystals enable anti-Stokes emission with pump intensities several orders of magnitude lower than required by conventional nonlinear optical techniques. Their exceptional properties, namely large anti-Stokes shifts, sharp emission spectra and long excited-state lifetimes, have led to a diversity of applications. Here, we review upconversion nanocrystals from the perspective of fundamental concepts and examine the technical challenges in relation to emission colour tuning and luminescence enhancement. In particular, we highlight the advances in functionalization strategies that enable the broad utility of upconversion nanocrystals for multimodal imaging, cancer therapy, volumetric displays and photonics.

  3. Controlling upconversion nanocrystals for emerging applications.

    PubMed

    Zhou, Bo; Shi, Bingyang; Jin, Dayong; Liu, Xiaogang

    2015-11-01

    Lanthanide-doped upconversion nanocrystals enable anti-Stokes emission with pump intensities several orders of magnitude lower than required by conventional nonlinear optical techniques. Their exceptional properties, namely large anti-Stokes shifts, sharp emission spectra and long excited-state lifetimes, have led to a diversity of applications. Here, we review upconversion nanocrystals from the perspective of fundamental concepts and examine the technical challenges in relation to emission colour tuning and luminescence enhancement. In particular, we highlight the advances in functionalization strategies that enable the broad utility of upconversion nanocrystals for multimodal imaging, cancer therapy, volumetric displays and photonics.

  4. Multiexciton fluorescence from semiconductor nanocrystals

    NASA Astrophysics Data System (ADS)

    Fisher, Brent; Caruge, Jean-Michel; Chan, Yin-Thai; Halpert, Jonathan; Bawendi, Moungi G.

    2005-11-01

    We use transient photoluminescence to spectrally resolve the emission from 1, 2, and 3 electron-hole pairs states in CdSe colloidal nanocrystals with radii ranging between 2.3 and 5.2 nm. Temporally and spectrally resolved multiexciton emission from single NCs is also observed. The observation of multiexciton emission enables new experiments and potential applications at both the single NC level and using ensembles of NCs. First we discuss the use of single CdSe(CdZnS) core(shell) colloidal NCs (spheres and rods) to generate triggered photon pair emission at room temperature, with specific ordering of the pair's constituent photons. Second, we incorporate CdSe/ZnS core-shell nanocrystals into a TiO 2 host matrix and observe simultaneous two-state amplified spontaneous emission and lasing from both multiexcitonic transitions (1S 3/2-1S e and 1P 3/2-1P e) in a surface-emitting distributed feedback CdSe NC laser. From our data we deduce radiative lifetimes, quantum yields, stimulated emission gain, and power dependencies for the multiexciton transitions.

  5. Organic ferroelectric/semiconducting nanowire hybrid layer for memory storage

    NASA Astrophysics Data System (ADS)

    Cai, Ronggang; Kassa, Hailu G.; Haouari, Rachid; Marrani, Alessio; Geerts, Yves H.; Ruzié, Christian; van Breemen, Albert J. J. M.; Gelinck, Gerwin H.; Nysten, Bernard; Hu, Zhijun; Jonas, Alain M.

    2016-03-01

    Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction intrinsic to the nanostructured hybrid layer offers opportunities for the development of strongly miniaturized ferroelectric and piezoelectric devices.Ferroelectric materials are important components of sensors, actuators and non-volatile memories. However, possible device configurations are limited due to the need to provide screening charges to ferroelectric interfaces to avoid depolarization. Here we show that, by alternating ferroelectric and semiconducting nanowires over an insulating substrate, the ferroelectric dipole moment can be stabilized by injected free charge carriers accumulating laterally in the neighboring semiconducting nanowires. This lateral electrostatic coupling between ferroelectric and semiconducting nanowires offers new opportunities to design new device architectures. As an example, we demonstrate the fabrication of an elementary non-volatile memory device in a transistor-like configuration, of which the source-drain current exhibits a typical hysteretic behavior with respect to the poling voltage. The potential for size reduction

  6. Nonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer

    NASA Astrophysics Data System (ADS)

    Son, Dong-Ick; Kim, Ji-Hwan; Park, Dong-Hee; Choi, Won Kook; Li, Fushan; Ham, Jung Hun; Kim, Tae Whan

    2008-02-01

    The bistable effects of CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole (PVK) polymer layer by using flexible poly-vinylidene difluoride (PVDF) and polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that CdSe/ZnS nanoparticles were formed inside the PVK polymer layer. Current-voltage (I-V) measurement on the Al/[CdSe/ZnS nanoparticles+ PVK]/ITO/PVDF and Al/[CdSe/ZnS nanoparticles+ PVK ]/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the CdSe/ZnS nanoparticles, indicative of trapping, storing and emission of charges in the electronic states of the CdSe nanoparticles. A bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results. These results indicate that OBDs fabricated by embedding inorganic CdSe/ZnS nanoparticles in a conducting polymer matrix on flexible substrates are prospects for potential applications in flexible nonvolatile flash memory devices.

  7. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2014-06-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  8. Size-Dependent Raman Shifts for nanocrystals

    PubMed Central

    Gao, Yukun; Zhao, Xinmei; Yin, Penggang; Gao, Faming

    2016-01-01

    Raman spectroscopy is a very sensitive tool for probing semiconductor nanocrystals. The underlying mechanism behind the size-dependent Raman shifts is still quite controversial. Here we offer a new theoretical method for the quantum confinement effects on the Raman spectra of semiconductor nanocrystals. We propose that the shift of Raman spectra in nanocrystals can result from two overlapping effects: the quantum effect shift and surface effect shift. The quantum effect shift is extracted from an extended Kubo formula, the surface effect shift is determined via the first principles calculations. Fairly good prediction of Raman shifts can be obtained without the use of any adjustable parameter. Closer analysis shows that the size-dependent Raman shifts in Si nanocrystals mainly result from the quantum effect shifts. For nanodiamond, the proportion of surface effect shift in Raman shift is up to about 40%. Such model can also provide a good baseline for using Raman spectroscopy as a tool to measure size. PMID:27102066

  9. Solar induced growth of silver nanocrystals

    NASA Astrophysics Data System (ADS)

    Thøgersen, Annett; Muntingh, Georg

    2013-04-01

    The effect of solar irradiation on plasmonic silver nanocrystals has been investigated using transmission electron microscopy and size distribution analysis, in the context of solar cell applications for light harvesting. Starting from an initial collection of spherical nanocrystals on a carbon film whose sizes are log-normally distributed, solar irradiation causes the nanocrystals to grow, with one particle reaching a diameter of 638 nm after four hours of irradiation. In addition some of the larger particles lose their spherical shape. The average nanocrystal diameter was found to grow as predicted by the Ostwald ripening model, taking into account the range of area fractions of the samples. The size distribution stays approximately log-normal and does not reach one of the steady-state size distributions predicted by the Ostwald ripening model. This might be explained by the system being in a transient state.

  10. Semiconductor-nanocrystal/conjugated polymer thin films

    DOEpatents

    Alivisatos, A. Paul; Dittmer, Janke J.; Huynh, Wendy U.; Milliron, Delia

    2010-08-17

    The invention described herein provides for thin films and methods of making comprising inorganic semiconductor-nanocrystals dispersed in semiconducting-polymers in high loading amounts. The invention also describes photovoltaic devices incorporating the thin films.

  11. Zirconia nanocrystals as submicron level biological label

    NASA Astrophysics Data System (ADS)

    Smits, K.; Liepins, J.; Gavare, M.; Patmalnieks, A.; Gruduls, A.; Jankovica, D.

    2012-08-01

    Inorganic nanocrystals are of increasing interest for their usage in biology and pharmacology research. Our interest was to justify ZrO2 nanocrystal usage as submicron level biological label in baker's yeast Saccharomyces cerevisia culture. For the first time (to our knowledge) images with sub micro up-conversion luminescent particles in biologic media were made. A set of undoped as well as Er and Yb doped ZrO2 samples at different concentrations were prepared by sol-gel method. The up-conversion luminescence for free standing and for nanocrystals with baker's yeast cells was studied and the differences in up-conversion luminescence spectra were analyzed. In vivo toxic effects of ZrO2 nanocrystals were tested by co-cultivation with baker's yeast.

  12. Nanocrystals: Shedding new light on silicon

    NASA Astrophysics Data System (ADS)

    Gösele, Ulrich

    2008-03-01

    Experiments in magnetic fields suggest that defects are responsible for light emission from silicon nanocrystals. However, when these defects are passivated with hydrogen, quantum effects become responsible for the emission.

  13. Self-assembly of lead chalcogenide nanocrystals.

    PubMed

    Quan, Zewei; Valentin-Bromberg, Loriana; Loc, Welley Siu; Fang, Jiye

    2011-05-02

    This review focuses on recent developments in the self-assembly of lead chalcogenide nanocrystals into two- and three-dimensional superstructures. Self-assembly is categorized by the shapes of building blocks, including nanospheres, nanocubes, nano-octahedra, and nanostars. In the section on nanospheres, rapid assemblies of lead chalcogenide-based multicomponent nanocrystals with additional components, such as semiconductors, noble metals, and magnetic nanocrystals, are further highlighted. In situ self-assembly of lead chalcogenide nanocrystals into one-dimensional nanostructures at elevated temperatures is also covered. Each section of this paper highlights examples extracted from recent publications. Finally, relatively novel properties and applications arising from lead chalcogenide superlattices as typical examples are also discussed.

  14. Tunable mid IR plasmon in GZO nanocrystals.

    PubMed

    Hamza, M K; Bluet, J-M; Masenelli-Varlot, K; Canut, B; Boisron, O; Melinon, P; Masenelli, B

    2015-07-28

    Degenerate metal oxide nanoparticles are promising systems to expand the significant achievements of plasmonics into the infrared (IR) range. Among the possible candidates, Ga-doped ZnO nanocrystals are particularly suited for mid IR, considering their wide range of possible doping levels and thus of plasmon tuning. In the present work, we report on the tunable mid IR plasmon induced in degenerate Ga-doped ZnO nanocrystals. The nanocrystals are produced by a plasma expansion and exhibit unprotected surfaces. Tuning the Ga concentration allows tuning the localized surface plasmon resonance. Moreover, the plasmon resonance is characterized by a large damping. By comparing the plasmon of nanocrystal assemblies to that of nanoparticles dispersed in an alumina matrix, we investigate the possible origins of such damping. We demonstrate that it partially results from the self-organization of the naked particles and also from intrinsic inhomogeneity of dopants.

  15. Composite material including nanocrystals and methods of making

    DOEpatents

    Bawendi, Moungi G.; Sundar, Vikram C.

    2008-02-05

    Temperature-sensing compositions can include an inorganic material, such as a semiconductor nanocrystal. The nanocrystal can be a dependable and accurate indicator of temperature. The intensity of emission of the nanocrystal varies with temperature and can be highly sensitive to surface temperature. The nanocrystals can be processed with a binder to form a matrix, which can be varied by altering the chemical nature of the surface of the nanocrystal. A nanocrystal with a compatibilizing outer layer can be incorporated into a coating formulation and retain its temperature sensitive emissive properties

  16. Composite material including nanocrystals and methods of making

    DOEpatents

    Bawendi, Moungi G.; Sundar, Vikram C.

    2010-04-06

    Temperature-sensing compositions can include an inorganic material, such as a semiconductor nanocrystal. The nanocrystal can be a dependable and accurate indicator of temperature. The intensity of emission of the nanocrystal varies with temperature and can be highly sensitive to surface temperature. The nanocrystals can be processed with a binder to form a matrix, which can be varied by altering the chemical nature of the surface of the nanocrystal. A nanocrystal with a compatibilizing outer layer can be incorporated into a coating formulation and retain its temperature sensitive emissive properties.

  17. Tailorable, Visible Light Emission From Silicon Nanocrystals

    SciTech Connect

    Samara, G.A.; Wilcoxon, J.P.

    1999-07-20

    J. P. Wilcoxon and G. A. Samara Crystalline, size-selected Si nanocrystals in the size range 1.8-10 nm grown in inverse micellar cages exhibit highly structured optical absorption and photoluminescence (PL) across the visible range of the spectrum. The most intense PL for the smallest nanocrystals produced This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, make any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof. to induce a useful level of visible photoluminescence (PL) from silicon (Si). The approaches understood. Visible PL has been observed from Si nanocrystals, or quantum dots, produced by a variety of techniques including aerosols,2 colloids,3 and ion implantation.4 However, all of The optical absorption spectra of our nanocrystals are much richer in spectral features spectrum of bulk Si where the spectral features reflect the details of the band structure shown in nanocrystals estimated to have a Si core diameter of 1-2 nm. These measured quantum those in the spectrum of bulk Si in Fig. 1 are striking indicating that nanocrystals of this size 8-Room temperature PL results on an HPLC size-selected, purified 2 nm nanocrystals but blue shifted by -0.4 eV due to quantum confinement. Excitation at 245 nm yields

  18. Three-terminal resistive switching memory in a transparent vertical-configuration device

    SciTech Connect

    Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

    2014-01-06

    The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies.

  19. Synthesis of new nanocrystal materials

    NASA Astrophysics Data System (ADS)

    Hassan, Yasser Hassan Abd El-Fattah

    Colloidal semiconductor nanocrystals (NCs) have sparked great excitement in the scientific community in last two decades. NCs are useful for both fundamental research and technical applications in various fields owing to their size and shape-dependent properties and their potentially inexpensive and excellent chemical processability. These NCs are versatile fluorescence probes with unique optical properties, including tunable luminescence, high extinction coefficient, broad absorption with narrow photoluminescence, and photobleaching resistance. In the past few years, a lot of attention has been given to nanotechnology based on using these materials as building blocks to design light harvesting assemblies. For instant, the pioneering applications of NCs are light-emitting diodes, lasers, and photovoltaic devices. Synthesis of the colloidal stable semiconductor NCs using the wet method of the pyrolysis of organometallic and chalcogenide precursors, known as hot-injection approach, is the chart-topping preparation method in term of high quality and monodisperse sized NCs. The advancement in the synthesis of these artificial materials is the core step toward their applications in a broad range of technologies. This dissertation focuses on exploring various innovative and novel synthetic methods of different types of colloidal nanocrystals, both inorganic semiconductors NCs, also known as quantum dots (QDs), and organic-inorganic metal halide-perovskite materials, known as perovskites. The work presented in this thesis focuses on pursuing fundamental understanding of the synthesis, material properties, photophysics, and spectroscopy of these nanostructured semiconductor materials. This thesis contains 6 chapters and conclusions. Chapters 1?3 focus on introducing theories and background of the materials being synthesized in the thesis. Chapter 4 demonstrates our synthesis of colloidal linker--free TiO2/CdSe NRs heterostructures with CdSe QDs grown in the presence of Ti

  20. Memory device using movement of protons

    DOEpatents

    Warren, W.L.; Vanheusden, K.J.R.; Fleetwood, D.M.; Devine, R.A.B.

    1998-11-03

    An electrically written memory element is disclosed utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element. 19 figs.

  1. Memory device using movement of protons

    DOEpatents

    Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

    2000-01-01

    An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

  2. Memory device using movement of protons

    DOEpatents

    Warren, William L.; Vanheusden, Karel J. R.; Fleetwood, Daniel M.; Devine, Roderick A. B.

    1998-01-01

    An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

  3. Applying analytical ultracentrifugation to nanocrystal suspensions.

    PubMed

    Jamison, Jennifer A; Krueger, Karl M; Mayo, J T; Yavuz, Cafer T; Redden, Jacina J; Colvin, Vicki L

    2009-09-02

    While applied frequently in physical biochemistry to the study of protein complexes, the quantitative use of analytical ultracentrifugation (AUC) for nanocrystal analysis is relatively rare. Its application in nanoscience is potentially very powerful as it provides a measure of nanocrystal density, size and structure directly in the solution phase. Towards that end, this paper examines the best practices for applying data collection and analysis methods for AUC, geared towards the study of biomolecules, to the unique problems of nanoparticle analysis. Using uniform nanocrystals of cadmium selenide, we compared several schemes for analyzing raw sedimentation data. Comparable values of the mean sedimentation coefficients (s-value) were found using several popular analytical approaches; however, the distribution in sample s-values is best captured using the van Holde-Weischt algorithm. Measured s-values could be reproducibly collected if sample temperature and concentration were controlled; under these circumstances, the variability for average sedimentation values was typically 5%. The full shape of the distribution in s-values, however, is not easily subjected to quantitative interpretation. Moreover, the selection of the appropriate sedimentation speed is crucial for AUC of nanocrystals as the density of inorganic nanocrystals is much larger than that of solvents. Quantitative analysis of sedimentation properties will allow for better agreement between experimental and theoretical models of nanocrystal solution behavior, as well as providing deeper insight into the hydrodynamic size and solution properties of nanomaterials.

  4. Voltage-impulse-induced nonvolatile tunable magnetoelectric inductor based on multiferroic bilayer structure

    NASA Astrophysics Data System (ADS)

    Su, Hua; Tang, Xiaoli; Zhang, Huaiwu; Sun, Nian X.

    2016-07-01

    In this study, we developed a voltage-impulse-induced nonvolatile tunable magnetoelectric inductor, which used an amorphous magnetic ribbon/lead zirconate titanate (PZT) multiferroic bilayer structure as a magnetic core. The PZT substrate, which contained defect dipoles through acceptor doping, was used in the bilayer structure to obtain an asymmetric strain-E “butterfly” curve. Different and stable voltage-impulse-induced in-plane residual stain states could be obtained by applying specific voltage impulse excitation modes. These residual strain states induced a nonvolatile inductance variation in the inductor through strain-mediated magnetoelectric coupling. This method provided a promising approach to realize nonvolatile tunable inductors for miniaturized circuits and systems.

  5. Voltage-impulse-induced dual-range nonvolatile magnetization modulation in metglas/PZT heterostructure

    NASA Astrophysics Data System (ADS)

    Tang, Xiaoli; Su, Hua; Zhang, Huaiwu; Sun, Nian X.

    2016-11-01

    Dual-range, nonvolatile magnetization modulation induced by voltage impulses was investigated in the metglas/lead zirconate titanate (PZT) heterostructure at room temperature. The heterostructure was obtained by bonding a square metglas ribbon on the top electrode of the PZT substrate, which contained defect dipoles resulting from acceptor doping. The PZT substrate achieved two strain hysteretic loops with the application of specific voltage impulse excitation modes. Through strain-mediated magnetoelectric coupling between the metglas ribbon and the PZT substrate, two strain hysteretic loops led to a dual-range nonvolatile magnetization modulation in the heterostructure. Reversible and stable voltage-impulse-induced nonvolatile modulation in the ferromagnetic resonance field and magnetic hysteresis characteristics were also realized. This method provides a promising approach in reducing energy consumption in magnetization modulation and other related devices.

  6. Solution synthesis of germanium nanocrystals

    DOEpatents

    Gerung, Henry; Boyle, Timothy J.; Bunge, Scott D.

    2009-09-22

    A method for providing a route for the synthesis of a Ge(0) nanometer-sized material from. A Ge(II) precursor is dissolved in a ligand heated to a temperature, generally between approximately 100.degree. C. and 400.degree. C., sufficient to thermally reduce the Ge(II) to Ge(0), where the ligand is a compound that can bond to the surface of the germanium nanomaterials to subsequently prevent agglomeration of the nanomaterials. The ligand encapsulates the surface of the Ge(0) material to prevent agglomeration. The resulting solution is cooled for handling, with the cooling characteristics useful in controlling the size and size distribution of the Ge(0) materials. The characteristics of the Ge(II) precursor determine whether the Ge(0) materials that result will be nanocrystals or nanowires.

  7. Polyimide Cellulose Nanocrystal Composite Aerogels

    NASA Technical Reports Server (NTRS)

    Nguyen, Baochau N.; Meador, Mary Ann; Rowan, Stuart; Cudjoe, Elvis; Sandberg, Anna

    2014-01-01

    Polyimide (PI) aerogels are highly porous solids having low density, high porosity and low thermal conductivity with good mechanical properties. They are ideal for various applications including use in antenna and insulation such as inflatable decelerators used in entry, decent and landing operations. Recently, attention has been focused on stimuli responsive materials such as cellulose nano crystals (CNCs). CNCs are environmentally friendly, bio-renewable, commonly found in plants and the dermis of sea tunicates, and potentially low cost. This study is to examine the effects of CNC on the polyimide aerogels. The CNC used in this project are extracted from mantle of a sea creature called tunicates. A series of polyimide cellulose nanocrystal composite aerogels has been fabricated having 0-13 wt of CNC. Results will be discussed.

  8. A luminescent nanocrystal stress gauge

    SciTech Connect

    Choi, Charina; Koski, Kristie; Olson, Andrew; Alivisatos, Paul

    2010-10-25

    Microscale mechanical forces can determine important outcomes ranging from the site of material fracture to stem cell fate. However, local stresses in a vast majority of systems cannot be measured due to the limitations of current techniques. In this work, we present the design and implementation of the CdSe/CdS core/shell tetrapod nanocrystal, a local stress sensor with bright luminescence readout. We calibrate the tetrapod luminescence response to stress, and use the luminescence signal to report the spatial distribution of local stresses in single polyester fibers under uniaxial strain. The bright stress-dependent emission of the tetrapod, its nanoscale size, and its colloidal nature provide a unique tool that may be incorporated into a variety of micromechanical systems including materials and biological samples to quantify local stresses with high spatial resolution.

  9. 2009 Clusters, Nanocrystals & Nanostructures GRC

    SciTech Connect

    Lai-Sheng Wang

    2009-07-19

    For over thirty years, this Gordon Conference has been the premiere meeting for the field of cluster science, which studies the phenomena that arise when matter becomes small. During its history, participants have witnessed the discovery and development of many novel materials, including C60, carbon nanotubes, semiconductor and metal nanocrystals, and nanowires. In addition to addressing fundamental scientific questions related to these materials, the meeting has always included a discussion of their potential applications. Consequently, this conference has played a critical role in the birth and growth of nanoscience and engineering. The goal of the 2009 Gordon Conference is to continue the forward-looking tradition of this meeting and discuss the most recent advances in the field of clusters, nanocrystals, and nanostructures. As in past meetings, this will include new topics that broaden the field. In particular, a special emphasis will be placed on nanomaterials related to the efficient use, generation, or conversion of energy. For example, we anticipate presentations related to batteries, catalysts, photovoltaics, and thermoelectrics. In addition, we expect to address the controversy surrounding carrier multiplication with a session in which recent results addressing this phenomenon will be discussed and debated. The atmosphere of the conference, which emphasizes the presentation of unpublished results and lengthy discussion periods, ensures that attendees will enjoy a valuable and stimulating experience. Because only a limited number of participants are allowed to attend this conference, and oversubscription is anticipated, we encourage all interested researchers from academia, industry, and government institutions to apply as early as possible. An invitation is not required. We also encourage all attendees to submit their latest results for presentation at the poster sessions. We anticipate that several posters will be selected for 'hot topic' oral

  10. VALIDATION STUDIES OF THERMAL EXTRACTION-GC/MS APPLIED TO SOURCE EMISSIONS AEROSOLS: 1. SEMIVOLATILE ANALYTE--NONVOLATILE MATRIX INTERACTIONS

    EPA Science Inventory

    This work develops a novel validation approach for studying how non-volatile aerosol matrices of considerably different chemical composition potentially affect the thermal extraction (TE)/GC/MS quantification of a wide range of trace semivolatile organic markers. The non-volatil...

  11. From fullerenes to nanocrystals and nanocrystal arrays: Novel preparation and characterization methods

    NASA Astrophysics Data System (ADS)

    Vezmar, Igor

    1998-09-01

    The success of cluster physics and chemistry and the macroscopic isolation of fullerenes motivated the research of nanometer-size from assemblies based on other elements. In this work an alternative fullerene generation method, utilizing the annealing of an all-carbon precursor formed in the reaction of halocarbons with alkali metals, has been demonstrated. Furthermore, a novel method of nanocrystal processing has been achieved via a compact, well-controlled, multi-stage inert gas flow system operating at near atmospheric pressure. The versatility and adaptability of the nanocrystal flow processor allows for the preparation of various nanostructured materials. Nanocrystal processing in the context of this work means the controlled growth of nanocrystals in a vapor phase environment, their annealing to obtain preferred morphologies, and subsequent full surface stabilization to facilitate collection and handling. The nanocrystal flow processor is coupled in-line to a time-of-flight mass spectrometer for real-time nanocrystal size and composition determination. Continuous sampling and mass analyzing of nanocrystals in the nanometer-diameter size range (up to one million Daltons) at part per billion concentrations has been achieved. Sampling of helium flows bearing benzene, fullerenes, as well as sodium, magnesium, silver, and cesium-iodide nanocrystals has been demonstrated. Using the nanocrystal processing approach, stable silver and gold nanocrystals of uniform size and shape distribution, passivated by self-assembled monolayers of long-chain thiol molecules were successfully prepared. The post-analysis of noble metal nanocrystals included optical spectroscopy, electron microscopy imaging and diffraction, x-ray diffraction and mass spectrometry. Stable and intense cluster beams from gold and silver nanocrystals were produced by laser desorption of molecular films. The mass onset of the desorbed entities corresponds directly to the dimensions of the nanocrystal core

  12. Non-volatile resistive switching in the dielectric superconductor YBa(2)Cu(3)O(7-δ).

    PubMed

    Acha, C; Rozenberg, M J

    2009-01-28

    We report on the reversible, non-volatile and polarity-dependent resistive switching between superconductor and insulator states at the interfaces of an Au/YBa(2)Cu(3)O(7-δ) (YBCO)/Au system. We show that, upon application of electric pulses, the superconducting state of YBCO in regions near the electrodes can be reversibly removed and restored. In addition, four-wire measurements reveal that pulsing also induces significant non-volatile changes in the bulk resistance. We argue that our observations are compatible with a scenario where the switching effect is due to migration of oxygen ions along grain boundaries that control the inter-grain superconducting coupling.

  13. EqualChance: Addressing Intra-set Write Variation to Increase Lifetime of Non-volatile Caches

    SciTech Connect

    Mittal, Sparsh; Vetter, Jeffrey S

    2014-01-01

    To address the limitations of SRAM such as high-leakage and low-density, researchers have explored use of non-volatile memory (NVM) devices, such as ReRAM (resistive RAM) and STT-RAM (spin transfer torque RAM) for designing on-chip caches. A crucial limitation of NVMs, however, is that their write endurance is low and the large intra-set write variation introduced by existing cache management policies may further exacerbate this problem, thereby reducing the cache lifetime significantly. We present EqualChance, a technique to increase cache lifetime by reducing intra-set write variation. EqualChance works by periodically changing the physical cache-block location of a write-intensive data item within a set to achieve wear-leveling. Simulations using workloads from SPEC CPU2006 suite and HPC (high-performance computing) field show that EqualChance improves the cache lifetime by 4.29X. Also, its implementation overhead is small, and it incurs very small performance and energy loss.

  14. WriteSmoothing: Improving Lifetime of Non-volatile Caches Using Intra-set Wear-leveling

    SciTech Connect

    Mittal, Sparsh; Vetter, Jeffrey S; Li, Dong

    2014-01-01

    Driven by the trends of increasing core-count and bandwidth-wall problem, the size of last level caches (LLCs) has greatly increased. Since SRAM consumes high leakage power, researchers have explored use of non-volatile memories (NVMs) for designing caches as they provide high density and consume low leakage power. However, since NVMs have low write-endurance and the existing cache management policies are write variation-unaware, effective wear-leveling techniques are required for achieving reasonable cache lifetimes using NVMs. We present WriteSmoothing, a technique for mitigating intra-set write variation in NVM caches. WriteSmoothing logically divides the cache-sets into multiple modules. For each module, WriteSmoothing collectively records number of writes in each way for any of the sets. It then periodically makes most frequently written ways in a module unavailable to shift the write-pressure to other ways in the sets of the module. Extensive simulation results have shown that on average, for single and dual-core system configurations, WriteSmoothing improves cache lifetime by 2.17X and 2.75X, respectively. Also, its implementation overhead is small and it works well for a wide range of algorithm and system parameters.

  15. EqualWrites: Reducing Intra-set Write Variations for Enhancing Lifetime of Non-volatile Caches

    DOE PAGES

    Mittal, Sparsh; Vetter, Jeffrey S.

    2015-01-29

    Driven by the trends of increasing core-count and bandwidth-wall problem, the size of last level caches (LLCs) has greatly increased and hence, the researchers have explored non-volatile memories (NVMs) which provide high density and consume low-leakage power. Since NVMs have low write-endurance and the existing cache management policies are write variation-unaware, effective wear-leveling techniques are required for achieving reasonable cache lifetimes using NVMs. We present EqualWrites, a technique for mitigating intra-set write variation. In this paper, our technique works by recording the number of writes on a block and changing the cache-block location of a hot data-item to redirect themore » future writes to a cold block to achieve wear-leveling. Simulation experiments have been performed using an x86-64 simulator and benchmarks from SPEC06 and HPC (high-performance computing) field. The results show that for single, dual and quad-core system configurations, EqualWrites improves cache lifetime by 6.31X, 8.74X and 10.54X, respectively. In addition, its implementation overhead is very small and it provides larger improvement in lifetime than three other intra-set wear-leveling techniques and a cache replacement policy.« less

  16. EqualWrites: Reducing Intra-set Write Variations for Enhancing Lifetime of Non-volatile Caches

    SciTech Connect

    Mittal, Sparsh; Vetter, Jeffrey S.

    2015-01-29

    Driven by the trends of increasing core-count and bandwidth-wall problem, the size of last level caches (LLCs) has greatly increased and hence, the researchers have explored non-volatile memories (NVMs) which provide high density and consume low-leakage power. Since NVMs have low write-endurance and the existing cache management policies are write variation-unaware, effective wear-leveling techniques are required for achieving reasonable cache lifetimes using NVMs. We present EqualWrites, a technique for mitigating intra-set write variation. In this paper, our technique works by recording the number of writes on a block and changing the cache-block location of a hot data-item to redirect the future writes to a cold block to achieve wear-leveling. Simulation experiments have been performed using an x86-64 simulator and benchmarks from SPEC06 and HPC (high-performance computing) field. The results show that for single, dual and quad-core system configurations, EqualWrites improves cache lifetime by 6.31X, 8.74X and 10.54X, respectively. In addition, its implementation overhead is very small and it provides larger improvement in lifetime than three other intra-set wear-leveling techniques and a cache replacement policy.

  17. Synthesis of nanocrystals and nanocrystal self-assembly

    NASA Astrophysics Data System (ADS)

    Chen, Zhuoying

    Chapter 1. A general introduction is presented on nanomaterials and nanoscience. Nanoparticles are discussed with respect to their structure and properties. Ferroelectric materials and nanoparticles in particular are highlighted, especially in the case of the barium titanate, and their potential applications are discussed. Different nanocrystal synthetic techniques are discussed. Nanoparticle superlattices, the novel "meta-materials" built from self-assembly at the nanoscale, are introduced. The formation of nanoparticle superlattices and the importance and interest of synthesizing these nanostructures is discussed. Chapter 2. Advanced applications for high k dielectric and ferroelectric materials in the electronics industry continues to demand an understanding of the underlying physics in decreasing dimensions into the nanoscale. The first part of this chapter presents the synthesis, processing, and electrical characterization of nanostructured thin films (thickness ˜100 nm) of barium titanate BaTiO3 built from uniform nanoparticles (<20 nm in diameter) in diameter. Essential to our approach is an understanding of the nanoparticle as a building block, combined with an ability to integrate them into thin films that have uniform and characteristic electrical properties. We observe the BaTiO3 nanocrystals crystallize with evidence of tetragonality. Electric field dependent polarization measurements show spontaneous polarization and hysteresis, indicating ferroelectric behavior for the BaTiO 3 nanocrystalline films with grain sizes in the range of 10--30 nm. Dielectric measurements of the films show dielectic constants in the range of 85--90 over the 1 kHz--100 kHz, with low loss. We present nanocrystals as initial building blocks for the preparation of thin films which exhibit uniform nanostructured morphologies and grain sizes. In the second part of this chapter, a nonhydrolytic alcoholysis route to study the preparation of well-crystallized size-tunable BaTiO3

  18. LDRD final report on Si nanocrystal as device prototype for spintronics applications.

    SciTech Connect

    Carroll, Malcolm S.; Verley, Jason C.; Pan, Wei; Banks, James Clifford; Brewer, Luke N.; Sheng, Josephine Juin-Jye; Barton, Daniel Lee; Dunn, Roberto G.

    2006-11-01

    The silicon microelectronics industry is the technological driver of modern society. The whole industry is built upon one major invention--the solid-state transistor. It has become clear that the conventional transistor technology is approaching its limitations. Recent years have seen the advent of magnetoelectronics and spintronics with combined magnetism and solid state electronics via spin-dependent transport process. In these novel devices, both charge and spin degree freedoms can be manipulated by external means. This leads to novel electronic functionalities that will greatly enhance the speed of information processing and memory storage density. The challenge lying ahead is to understand the new device physics, and control magnetic phenomena at nanometer length scales and in reduced dimensions. To meet this goal, we proposed the silicon nanocrystal system, because: (1) It is compatible with existing silicon fabrication technologies; (2) It has shown strong quantum confinement effects, which can modify the electric and optical properties through directly modifying the band structure; and (3) the spin-orbital coupling in silicon is very small, and for isotopic pure {sup 28}Si, the nuclear spin is zero. These will help to reduce the spin-decoherence channels. In the past fiscal year, we have studied the growth mechanism of silicon-nanocrystals embedded in silicon dioxide, their photoluminescence properties, and the Si-nanocrystal's magnetic properties in the presence of Mn-ion doping. Our results may demonstrate the first evidence of possible ferromagnetic orders in Mn-ion implanted silicon nanocrystals, which can lead to ultra-fast information process and ultra-dense magnetic memory applications.

  19. CH3 NH3 PbBr3 Perovskite Nanocrystals as Efficient Light-Harvesting Antenna for Fluorescence Resonance Energy Transfer.

    PubMed

    Muthu, Chinnadurai; Vijayan, Anuja; Nair, Vijayakumar C

    2017-03-16

    Hybrid perovskites have created enormous research interest as a low-cost material for high-performance photovoltaic devices, light-emitting diodes, photodetectors, memory devices and sensors. Perovskite materials in nanocrystal form that display intense luminescence due to the quantum confinement effect were found to be particularly suitable for most of these applications. However, the potential use of perovskite nanocrystals as a light-harvesting antenna for possible applications in artificial photosynthesis systems is not yet explored. In the present work, we study the light-harvesting antenna properties of luminescent methylammonium lead bromide (CH3 NH3 PbBr3 )-based perovskite nanocrystals using fluorescent dyes (rhodamine B, rhodamine 101, and nile red) as energy acceptors. Our studies revealed that CH3 NH3 PbBr3 nanocrystals are an excellent light-harvesting antenna, and efficient fluorescence resonance energy transfer occurs from the nanocrystals to fluorescent dyes. Further, the energy transfer efficiency is found to be highly dependent on the number of anchoring groups and binding ability of the dyes to the surface of the nanocrystals. These observations may have significant implications for perovskite-based light-harvesting devices and their possible use in artificial photosynthesis systems.

  20. Surface treatment of nanocrystal quantum dots after film deposition

    DOEpatents

    Sykora, Milan; Koposov, Alexey; Fuke, Nobuhiro

    2015-02-03

    Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.