Doped silicon nanocrystals from organic dopant precursor by a SiCl4-based high frequency nonthermal plasma

NASA Astrophysics Data System (ADS)

Zhou, Shu; Ding, Yi; Pi, Xiaodong; Nozaki, Tomohiro

2014-11-01

Doped silicon nanocrystals (Si NCs) are of great interest in demanding low-cost nanodevices because of the abundance and nontoxicity of Si. Here, we demonstrate a cost-effective gas phase approach to synthesize phosphorous (P)-doped Si NCs in which the precursors used, i.e., SiCl4, trimethyl phosphite (TMP), are both safe and economical. It is found that the TMP-enabled P-doping does not change the crystalline structure of Si NCs. The surface of P-doped Si NCs is terminated by both Cl and H. The Si-H bond density at the surface of P-doped Si NCs is found to be much higher than that of undoped Si NCs. The X-ray photoelectron spectroscopy and electron spin resonance results indicate that P atoms are doped into the substitutional sites of the Si-NC core and electrically active in Si NCs. Unintentional impurities, such as carbon contained in TMP, are not introduced into Si NCs.

Doping effect in Si nanocrystals

NASA Astrophysics Data System (ADS)

Li, Dongke; Xu, Jun; Zhang, Pei; Jiang, Yicheng; Chen, Kunji

2018-06-01

Intentional doping in semiconductors is a fundamental issue since it can control the conduction type and ability as well as modify the optical and electronic properties. To realize effective doping is the basis for developing semiconductor devices. However, by reducing the size of a semiconductor, like Si, to the nanometer scale, the doping effects become complicated due to the coupling between the quantum confinement effect and the surfaces and/or interfaces effect. In particular, by introducing phosphorus or boron impurities as dopants into material containing Si nanocrystals with a dot size of less than 10 nm, it exhibits different behaviors and influences on the physical properties from its bulk counterpart. Understanding the doping effects in Si nanocrystals is currently a challenge in order to further improve the performance of the next generation of nano-electronic and photonic devices. In this review, we present an overview of the latest theoretical studies and experimental results on dopant distributions and their effects on the electronic and optical properties of Si nanocrystals. In particular, the advanced characterization techniques on dopant distribution, the carrier transport process as well as the linear and nonlinear optical properties of doped Si nanocrystals, are systematically summarized.

Enhanced electrochemiluminescence quenching of CdS:Mn nanocrystals by CdTe QDs-doped silica nanoparticles for ultrasensitive detection of thrombin.

PubMed

Shan, Yun; Xu, Jing-Juan; Chen, Hong-Yuan

2011-07-01

This work reports an aptasensor for ultrasensitive detection of thrombin based on remarkably efficient energy-transfer induced electrochemiluminescence (ECL) quenching from CdS:Mn nanocrystals (NCs) film to CdTe QDs-doped silica nanoparticles (CdTe/SiO(2) NPs). CdTe/SiO(2) NPs were synthesized via the Stöber method and showed black bodies' strong absorption in a wide spectral range without excitonic emission, which made them excellent ECL quenchers. Within the effective distance of energy scavenging, the ECL quenching efficiency was dependent on the number of CdTe QDs doped into the silica NPs. Using ca. 200 CdTe QDs doped silica NPs on average of 40 nm in diameter as ECL quenching labels, attomolar detection of thrombin was successfully realized. The protein detection involves a competition binding event, based on thrombin replacing CdTe/SiO(2) NPs labeled probing DNA which is hybridized with capturing aptamer immobilized on a CdS:Mn NCs film modified glassy carbon electrode surface by specific aptamer-protein affinity interactions. It results in the displacement of ECL quenching labels from CdS:Mn NCs film and concomitant ECL signal recovery. Owing to the high-content CdTe QDs in silica NP, the increment of ECL intensity (ΔI(ECL)) and the concentration of thrombin showed a double logarithmic linear correlation in the range of 5.0 aM∼5.0 fM with a detection limit of 1aM. And, the aptasensor hardly responded to antibody, bovine serum albumin (BSA), haemoglobin (Hb) and lysozyme, showing good detection selectivity for thrombin. This long-distance energy scavenging could have a promising application perspective in the detection of biological recognition events on a molecular level.

Increased electronic coupling in silicon nanocrystal networks doped with F4-TCNQ.

PubMed

Carvalho, Alexandra; Oberg, Sven; Rayson, Mark J; Briddon, Patrick R

2013-02-01

The modification of the electronic structure of silicon nanocrystals using an organic dopant, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), is investigated using first-principles calculations. It is shown that physisorbed F4-TCNQ molecules have the effect of oxidizing the nanocrystal, attracting the charge density towards the F4-TCNQ-nanocrystal interface, and decreasing the excitation energy of the system. In periodic F4-TCNQ/nanocrystal superlattices, F4-TCNQ is suggested to enhance exciton separation, and in the presence of free holes, to serve as a bridge for electron/hole transfer between adjacent nanocrystals.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

NASA Astrophysics Data System (ADS)

Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

2014-11-01

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in

Light-induced changes in silicon nanocrystal based solar cells: Modification of silicon-hydrogen bonding on silicon nanocrystal surface under illumination

NASA Astrophysics Data System (ADS)

Kim, Ka-Hyun; Johnson, Erik V.; Cabarrocas, Pere Roca i.

2016-07-01

Hydrogenated polymorphous silicon (pm-Si:H) is a material consisting of a small volume fraction of nanocrystals embedded in an amorphous matrix. pm-Si:H solar cells demonstrate interesting initial degradation behaviors such as rapid initial change in photovoltaic parameters and self-healing after degradation during light-soaking. The precise dynamics of the light-induced degradation was studied in a series of light-soaking experiments under various illumination conditions such as AM1.5G and filtered 570 nm yellow light. Hydrogen effusion experiment before and after light-soaking further revealed that the initial degradation of pm-Si:H solar cells originate from the modification of silicon-hydrogen bonding on the surface of silicon nanocrystals in pm-Si:H.

Synthesis and spectroscopic properties of silica-dye-semiconductor nanocrystal hybrid particles.

PubMed

Ren, Ting; Erker, Wolfgang; Basché, Thomas; Schärtl, Wolfgang

2010-12-07

We prepared silica-dye-nanocrystal hybrid particles and studied the energy transfer from semiconductor nanocrystals (= donor) to organic dye molecules (= acceptor). Multishell CdSe/CdS/ZnS semiconductor nanocrystals were adsorbed onto monodisperse Stöber silica particles with an outer silica shell of thickness 2-23 nm containing organic dye molecules (Texas Red). The thickness of this dye layer has a strong effect on the energy transfer efficiency, which is explained by the increase in the number of dye molecules homogeneously distributed within the silica shell, in combination with an enhanced surface adsorption of nanocrystals with increasing dye amount. Our conclusions were underlined by comparison of the experimental results with numerically calculated FRET efficiencies and by control experiments confirming attractive interaction between the nanocrystals and Texas Red freely dissolved in solution.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics.

PubMed

Singh, Vivek; Yu, Yixuan; Sun, Qi-C; Korgel, Brian; Nagpal, Prashant

2014-12-21

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.

Silicon nanocrystals as handy biomarkers

NASA Astrophysics Data System (ADS)

Fujioka, Kouki; Hoshino, Akiyoshi; Manabe, Noriyoshi; Futamura, Yasuhiro; Tilley, Richard; Yamamoto, Kenji

2007-02-01

Quantum dots (QDs) have brighter and longer fluorescence than organic dyes. Therefore, QDs can be applied to biotechnology, and have capability to be applied to medical technology. Currently, among the several types of QDs, CdSe with a ZnS shell is one of the most popular QDs to be used in biological experiments. However, when the CdSe QDs were applied to clinical technology, potential toxicological problems due to CdSe core should be considered. To eliminate the problem, silicon nanocrystals, which have the potential of biocompatibility, could be a candidate of alternate probes. Silicon nanocrystals have been synthesized using several techniques such as aerosol, electrochemical etching, laser pyrolysis, plasma deposition, and colloids. Recently, the silicon nanocrystals were reported to be synthesized in inverse micelles and also stabilized with 1-heptene or allylamine capping. Blue fluorescence of the nanocrystals was observed when excited with a UV light. The nanocrystals covered with 1-heptene are hydrophobic, whereas the ones covered with allylamine are hydrophilic. To test the stability in cytosol, the water-soluble nanocrystals covered with allylamine were examined with a Hela cell incorporation experiment. Bright blue fluorescence of the nanocrystals was detected in the cytosol when excited with a UV light, implying that the nanocrystals were able to be applied to biological imaging. In order to expand the application range, we synthesized and compared a series of silicon nanocrystals, which have variable surface modification, such as alkyl group, alcohol group, and odorant molecules. This study will provide a wider range of optoelectronic applications and bioimaging technology.

Nanocrystal doped matrixes

DOEpatents

Parce, J. Wallace; Bernatis, Paul; Dubrow, Robert; Freeman, William P.; Gamoras, Joel; Kan, Shihai; Meisel, Andreas; Qian, Baixin; Whiteford, Jeffery A.; Ziebarth, Jonathan

2010-01-12

Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells.

Continuously tunable photonic fractional Hilbert transformer using a high-contrast germanium-doped silica-on-silicon microring resonator.

PubMed

Shahoei, Hiva; Dumais, Patrick; Yao, Jianping

2014-05-01

We propose and experimentally demonstrate a continuously tunable fractional Hilbert transformer (FHT) based on a high-contrast germanium-doped silica-on-silicon (SOS) microring resonator (MRR). The propagation loss of a high-contrast germanium-doped SOS waveguide can be very small (0.02 dB/cm) while the lossless bend radius can be less than 1 mm. These characteristics lead to the fabrication of an MRR with a high Q-factor and a large free-spectral range (FSR), which is needed to implement a Hilbert transformer (HT). The SOS MRR is strongly polarization dependent. By changing the polarization direction of the input signal, the phase shift introduced at the center of the resonance spectrum is changed. The tunable phase shift at the resonance wavelength can be used to implement a tunable FHT. A germanium-doped SOS MRR with a high-index contrast of 3.8% is fabricated. The use of the fabricated MRR for the implementation of a tunable FHT with tunable orders at 1, 0.85, 0.95, 1.05, and 1.13 for a Gaussian pulse with the temporal full width at half-maximum of 80 ps is experimentally demonstrated.

Enhanced photoluminescence of Si nanocrystals-doped cellulose nanofibers by plasmonic light scattering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sugimoto, Hiroshi; Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501; Zhang, Ran

2015-07-27

We report the development of bio-compatible cellulose nanofibers doped with light emitting silicon nanocrystals and Au nanoparticles via facile electrospinning. By performing photoluminescence (PL) spectroscopy as a function of excitation wavelength, we demonstrate plasmon-enhanced PL by a factor of 2.2 with negligible non-radiative quenching due to plasmon-enhanced scattering of excitation light from Au nanoparticles to silicon nanocrystals inside the nanofibers. These findings provide an alternative approach for the development of plasmon-enhanced active systems integrated within the compact nanofiber geometry. Furthermore, bio-compatible light-emitting nanofibers prepared by a cost-effective solution-based processing are very promising platforms for biophotonic applications such as fluorescence sensingmore » and imaging.« less

Alkyl Passivation and Amphiphilic Polymer Coating of Silicon Nanocrystals for Diagnostic Imaging

PubMed Central

Hessel, Colin M.; Rasch, Michael R.; Hueso, Jose L.; Goodfellow, Brian W.; Akhavan, Vahid A.; Puvanakrishnan, Priyaveena; Tunnell, James W.

2011-01-01

We show a method to produce biocompatible polymer-coated silicon (Si) nanocrystals for medical imaging. Silica-embedded Si nanocrystals are formed by HSQ thermolysis. The nanocrystals are then liberated from the oxide and terminated with Si-H bonds by HF etching, followed by alkyl monolayer passivation by thermal hydrosilylation. The Si nanocrystals have an average diameter of 2.1 ± 0.6 nm and photoluminesce (PL) with a peak emission wavelength of 650 nm, which lies within the transmission window of 650–900 nm that is useful for biological imaging. The hydrophobic Si nanocrystals are then coated with an amphiphilic polymer for dispersion in aqueous media with pH ranging between 7 and 10 and ionic strength between 30 mM and 2 M, while maintaining a bright and stable PL and a hydrodynamic radius of only 20 nm. Fluorescence imaging of polymer-coated Si nanocrystals in a biological tissue host is demonstrated, showing the potential for in vivo imaging. PMID:20818646

One-Step Synthesis of Monodisperse In-Doped ZnO Nanocrystals

NASA Astrophysics Data System (ADS)

Wang, Qing Ling; Yang, Ye Feng; He, Hai Ping; Chen, Dong Dong; Ye, Zhi Zhen; Jin, Yi Zheng

2010-05-01

A method for the synthesis of high quality indium-doped zinc oxide (In-doped ZnO) nanocrystals was developed using a one-step ester elimination reaction based on alcoholysis of metal carboxylate salts. The resulting nearly monodisperse nanocrystals are well-crystallized with typically crystal structure identical to that of wurtzite type of ZnO. Structural, optical, and elemental analyses on the products indicate the incorporation of indium into the host ZnO lattices. The individual nanocrystals with cubic structures were observed in the 5% In-ZnO reaction, due to the relatively high reactivity of indium precursors. Our study would provide further insights for the growth of doped oxide nanocrystals, and deepen the understanding of doping process in colloidal nanocrystal syntheses.

Optical properties of silicon nanocrystals synthesized in supercritical fluids

NASA Astrophysics Data System (ADS)

Pell, Lindsay; Korgel, Brian A.

2002-11-01

We developed a supercritical solution phase synthesis of silicon nanocrystals. High temperature and pressure (500°C, >140 bar) conditions allow a wet chemical approach to this challenging synthesis. Diphenylsilane was used as a silicon precursor and long chain thiols and alcohols were used to sterically stabilize the luminescent nanocrystals. Moderate size separation was achieved via size exclusion chromatography using crosslinked styrene divinylbenzene beads. Size separated fractions of silicon nanocrystals exhibit quantum efficiencies of 12% while polydisperse samples have quantum efficiencies of 5%. Nanocrystal size distributions have been determined with transmission electron microscopy and further characterized with atomic force microscopy (AFM). These silicon nanocrystals have size tunable photoluminescence as indicated by their ensemble spectroscopy and further verified through AFM and single nanocrystal photoluminescence spectroscopy. Fluorescence intermittency (characteristic of single CdSe nanocrystals) is present in our isolated silicon nanocrystals and is one of the criteria used to distinguish single crystals from clusters of particles.

Plasmonic engineering of spontaneous emission from silicon nanocrystals.

PubMed

Goffard, Julie; Gérard, Davy; Miska, Patrice; Baudrion, Anne-Laure; Deturche, Régis; Plain, Jérôme

2013-01-01

Silicon nanocrystals offer huge advantages compared to other semi-conductor quantum dots as they are made from an abundant, non-toxic material and are compatible with silicon devices. Besides, among a wealth of extraordinary properties ranging from catalysis to nanomedicine, metal nanoparticles are known to increase the radiative emission rate of semiconductor quantum dots. Here, we use gold nanoparticles to accelerate the emission of silicon nanocrystals. The resulting integrated hybrid emitter is 5-fold brighter than bare silicon nanocrystals. We also propose an in-depth analysis highlighting the role of the different physical parameters in the photoluminescence enhancement phenomenon. This result has important implications for the practical use of silicon nanocrystals in optoelectronic devices, for instance for the design of efficient down-shifting devices that could be integrated within future silicon solar cells.

Effect of Doping on the Properties of Hydrogenated Amorphous Silicon Irradiated with Femtosecond Laser Pulses

NASA Astrophysics Data System (ADS)

Denisova, K. N.; Il'in, A. S.; Martyshov, M. N.; Vorontsov, A. S.

2018-04-01

A comparative analysis of the effect of femtosecond laser irradiation on the structure and conductivity of undoped and boron-doped hydrogenated amorphous silicon ( a-Si: H) is performed. It is demonstrated that the process of nanocrystal formation in the amorphous matrix under femtosecond laser irradiation is initiated at lower laser energy densities in undoped a-Si: H samples. The differences in conductivity between undoped and doped a-Si: H samples vanish almost completely after irradiation with an energy density of 150-160 mJ/cm2.

Lifetime of excitons localized in Si nanocrystals in amorphous silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gusev, O. B.; Belolipetskiy, A. V., E-mail: alexey.belolipetskiy@mail.ioffe.ru; Yassievich, I. N.

2016-05-15

The introduction of nanocrystals plays an important role in improving the stability of the amorphous silicon films and increasing the carrier mobility. Here we report results of the study on the photoluminescence and its dynamics in the films of amorphous hydrogenated silicon containing less than 10% of silicon nanocrystals. The comparing of the obtained experimental results with the calculated probability of the resonant tunneling of the excitons localized in silicon nanocrystals is presented. Thus, it has been estimated that the short lifetime of excitons localized in Si nanocrystal is controlled by the resonant tunneling to the nearest tail state ofmore » the amorphous matrix.« less

Syntheses and applications of manganese-doped II-VI semiconductor nanocrystals

NASA Astrophysics Data System (ADS)

Yang, Heesun

Syntheses, characterizations, and applications of two different Mn-doped semiconductor nanocrystals, ZnS:Mn and CdS:Mn/ZnS core/shell, were investigated. ZnS:Mn nanocrystals with sizes between 3 and 4 nm were synthesized via a competitive reaction chemistry. A direct current (dc) electroluminescent (EL) device having a hybrid organic/inorganic multilayer structure of an indium tin oxide (ITO) transparent conducting electrode, a (poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT-PSS) and a poly(N-vinylcarbazole) (PVK) bilayer hole transport film, a ZnS:Mn nanocrystal layer, and Al dot contacts was demonstrated to emit blue (˜445 and ˜495 nm) from PVK and yellow (˜600 nm) light from Mn activator in ZnS. The EL emission spectrum was dependent upon both the voltage and Mn concentration, showing a decreasing nanocrystal to PVK emission ratio from 10 at 20 V to 4 at 28 V, and an increasing ratio from 1.3 at 0.40 mol % to 4.3 at 2.14 mol %. Mn-doped CdS core nanocrystals were produced ranging from 1.5 to 2.3 nm in diameter with a ZnS shell via a reverse micelle process. In contrast to CdS:Mn nanocrystals passivated by n-dodecanethiol, ZnS-passivated CdS:Mn (CdS:Mn/ZnS core/shell) nanocrystals were efficient and photostable. CdS:Mn/ZnS core/shell nanocrystals exhibited a quantum yield of ˜18%, and the photoluminescence (PL) intensity increased by 40% after 400 nm UV irradiation in air. X-ray photoelectron spectroscopy (XPS) data showed that UV irradiation of CdS:Mn/ZnS nanocrystals induces the photooxidation of the ZnS shell surface to ZnSO4. This photooxidation product is presumably responsible for the increased PL emission by serving as a passivating surface layer. Luminescent lifetime data from the core/shell nanocrystals could be fit with two exponential functions, with a time constant of ˜170 nsec for the defect-related centers and of ˜1 msec for the Mn centers. The CdS:Mn/ZnS nanocrystals with a core crystal diameter of 2.3 nm and a 0.4 nm thick Zn

Effect of the granule size in porous silicon on the photosensitization efficiency of molecular oxygen on the surface of silicon nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Demin, V. A.; Konstantinova, E. A., E-mail: liza35@mail.ru; Gongal'skii, M. B.

2009-03-15

Photoluminescence is used to study the effect of the granule size in porous silicon on the generation efficiency of the excited state of molecular oxygen ({sup 1}O{sub 2}) on the surface of silicon nanocrystals. The generation efficiency is found to increase as the granule size becomes smaller than 100 nm, which can be explained by a change in the conditions of exciton diffusion along a network of silicon nanocrystals.

Photoluminescence properties of arsenic and boron doped Si3N4 nanocrystal embedded in SiN x O y matrix

NASA Astrophysics Data System (ADS)

Puglia, Denise; Sombrio, Guilherme; dos Reis, Roberto; Boudinov, Henri

2018-03-01

Photoluminescence emission of Si3N4 nanocrystals embedded in SiN x O y matrices was investigated. Nanocrystals were grown by annealing of silicon oxynitride films deposited by sputtering, passivated in forming gas atmosphere and implanted with boron and arsenic. Emission energy was tuned from green to ultraviolet by changing the composition of SiN x O y matrices. Structural characterization of the nanocrystals was performed by Transmission Electron Microscopy. Photoluminescence at room and low temperatures was analyzed and the results suggest that light emission originates in the interface between the nanocrystals and the matrix. The highest photoluminescence intensity at room temperature was achieved by arsenic doped silicon oxynitride films deposited with an excess of nitrogen.

Monte Carlo Study on Carbon-Gradient-Doped Silica Aerogel Insulation.

PubMed

Zhao, Y; Tang, G H

2015-04-01

Silica aerogel is almost transparent for wavelengths below 8 µm where significant energy is transferred by thermal radiation. The radiative heat transfer can be restricted at high temperature if doped with carbon powder in silica aerogel. However, different particle sizes of carbon powder doping have different spectral extinction coefficients and the doped carbon powder will increase the solid conduction of silica aerogel. This paper presents a theoretical method for determining the optimal carbon doping in silica aerogel to minimize the energy transfer. Firstly we determine the optimal particle size by combining the spectral extinction coefficient with blackbody radiation and then evaluate the optimal doping amount between heat conduction and radiation. Secondly we develop the Monte Carlo numerical method to study radiative properties of carbon-gradient-doped silica aerogel to decrease the radiative heat transfer further. The results indicate that the carbon powder is able to block infrared radiation and thus improve the thermal insulating performance of silica aerogel effectively.

Multicolor tuning of manganese-doped ZnS colloidal nanocrystals.

PubMed

Quan, Zewei; Yang, Dongmei; Li, Chunxia; Kong, Deyan; Yang, Piaoping; Cheng, Ziyong; Lin, Jun

2009-09-01

In this paper, we report a facile route which is based on tuning doping concentration of Mn(2+) ions in ZnS nanocrystals, to achieve deliberate color modulation from blue to orange-yellow under single-wavelength excitation. X-ray diffraction (XRD), transmission electron microscopy (TEM), as well as photoluminescence (PL) spectra were employed to characterize the obtained samples. In this process, the relative emission intensities of both ZnS host (blue) and Mn(2+) dopant (orange-yellow) are sensitive to the Mn(2+) doping concentration, due to the energy transfer from ZnS host to Mn(2+) dopant. As a result of fine-tuning of these two emission components, white emission can be realized for Mn(2+)-doped ZnS nanocrystals. Furthermore, the as-synthesized doped nanocrystals possess extremely narrow size distribution and can be readily transferred into aqueous solution for the next potential applications.

Zero-reabsorption doped-nanocrystal luminescent solar concentrators.

PubMed

Erickson, Christian S; Bradshaw, Liam R; McDowall, Stephen; Gilbertson, John D; Gamelin, Daniel R; Patrick, David L

2014-04-22

Optical concentration can lower the cost of solar energy conversion by reducing photovoltaic cell area and increasing photovoltaic efficiency. Luminescent solar concentrators offer an attractive approach to combined spectral and spatial concentration of both specular and diffuse light without tracking, but they have been plagued by luminophore self-absorption losses when employed on practical size scales. Here, we introduce doped semiconductor nanocrystals as a new class of phosphors for use in luminescent solar concentrators. In proof-of-concept experiments, visibly transparent, ultraviolet-selective luminescent solar concentrators have been prepared using colloidal Mn(2+)-doped ZnSe nanocrystals that show no luminescence reabsorption. Optical quantum efficiencies of 37% are measured, yielding a maximum projected energy concentration of ∼6× and flux gain for a-Si photovoltaics of 15.6 in the large-area limit, for the first time bounded not by luminophore self-absorption but by the transparency of the waveguide itself. Future directions in the use of colloidal doped nanocrystals as robust, processable spectrum-shifting phosphors for luminescent solar concentration on the large scales required for practical application of this technology are discussed.

A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement.

PubMed

Kim, Jaemin; Son, Donghee; Lee, Mincheol; Song, Changyeong; Song, Jun-Kyul; Koo, Ja Hoon; Lee, Dong Jun; Shim, Hyung Joon; Kim, Ji Hoon; Lee, Minbaek; Hyeon, Taeghwan; Kim, Dae-Hyeong

2016-01-01

Strategies for efficient charge confinement in nanocrystal floating gates to realize high-performance memory devices have been investigated intensively. However, few studies have reported nanoscale experimental validations of charge confinement in closely packed uniform nanocrystals and related device performance characterization. Furthermore, the system-level integration of the resulting devices with wearable silicon electronics has not yet been realized. We introduce a wearable, fully multiplexed silicon nonvolatile memory array with nanocrystal floating gates. The nanocrystal monolayer is assembled over a large area using the Langmuir-Blodgett method. Efficient particle-level charge confinement is verified with the modified atomic force microscopy technique. Uniform nanocrystal charge traps evidently improve the memory window margin and retention performance. Furthermore, the multiplexing of memory devices in conjunction with the amplification of sensor signals based on ultrathin silicon nanomembrane circuits in stretchable layouts enables wearable healthcare applications such as long-term data storage of monitored heart rates.

Optical properties of an indium doped CdSe nanocrystal: A density functional approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Salini, K.; Mathew, Vincent, E-mail: vincent@cukerala.ac.in; Mathew, Thomas

2016-05-06

We have studied the electronic and optical properties of a CdSe nanocrystal doped with n-type impurity atom. First principle calculations of the CdSe nanocrystal based on the density functional theory (DFT), as implemented in the Vienna Ab Initio Simulation Package (VASP) was used in the calculations. We have introduced a single Indium impurity atom into CdSe nanocrystal with 1.3 nm diameter. Nanocrystal surface dangling bonds are passivated with hydrogen atom. The band-structure, density of states and absorption spectra of the doped and undopted nanocrystals were discussed. Inclusion of the n-type impurity atom introduces an additional electron in conduction band, and significantlymore » alters the electronic and optical properties of undoped CdSe nanocrystal. Indium doped CdSe nannocrystal have potential applications in optoelectronic devices.« less

A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement

PubMed Central

Kim, Jaemin; Son, Donghee; Lee, Mincheol; Song, Changyeong; Song, Jun-Kyul; Koo, Ja Hoon; Lee, Dong Jun; Shim, Hyung Joon; Kim, Ji Hoon; Lee, Minbaek; Hyeon, Taeghwan; Kim, Dae-Hyeong

2016-01-01

Strategies for efficient charge confinement in nanocrystal floating gates to realize high-performance memory devices have been investigated intensively. However, few studies have reported nanoscale experimental validations of charge confinement in closely packed uniform nanocrystals and related device performance characterization. Furthermore, the system-level integration of the resulting devices with wearable silicon electronics has not yet been realized. We introduce a wearable, fully multiplexed silicon nonvolatile memory array with nanocrystal floating gates. The nanocrystal monolayer is assembled over a large area using the Langmuir-Blodgett method. Efficient particle-level charge confinement is verified with the modified atomic force microscopy technique. Uniform nanocrystal charge traps evidently improve the memory window margin and retention performance. Furthermore, the multiplexing of memory devices in conjunction with the amplification of sensor signals based on ultrathin silicon nanomembrane circuits in stretchable layouts enables wearable healthcare applications such as long-term data storage of monitored heart rates. PMID:26763827

Multicolour synthesis in lanthanide-doped nanocrystals through cation exchange in water

NASA Astrophysics Data System (ADS)

Han, Sanyang; Qin, Xian; An, Zhongfu; Zhu, Yihan; Liang, Liangliang; Han, Yu; Huang, Wei; Liu, Xiaogang

2016-10-01

Meeting the high demand for lanthanide-doped luminescent nanocrystals across a broad range of fields hinges upon the development of a robust synthetic protocol that provides rapid, just-in-time nanocrystal preparation. However, to date, almost all lanthanide-doped luminescent nanomaterials have relied on direct synthesis requiring stringent controls over crystal nucleation and growth at elevated temperatures. Here we demonstrate the use of a cation exchange strategy for expeditiously accessing large classes of such nanocrystals. By combining the process of cation exchange with energy migration, the luminescence properties of the nanocrystals can be easily tuned while preserving the size, morphology and crystal phase of the initial nanocrystal template. This post-synthesis strategy enables us to achieve upconversion luminescence in Ce3+ and Mn2+-activated hexagonal-phased nanocrystals, opening a gateway towards applications ranging from chemical sensing to anti-counterfeiting.

Plasmon induced modification of silicon nanocrystals photoluminescence in presence of gold nanostripes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dyakov, S. A.; Zhigunov, D. M.; Marinins, A.

Here, we report on the results of theoretical and experimental studies of photoluminescense of silicon nanocrystals in the proximity to plasmonic modes of different types. In the studied samples, the type of plasmonic mode is determined by the filling ratio of a one-dimensional array of gold stripes which covers the thin film with silicon nanocrystals on a quartz substrate. We analyze the extinction, photoluminesce spectra and decay kinetics of silicon nanocrystals and show that the incident and emitted light is coupled to the corresponding plasmonic mode. We demonstrate the modification of the extinction and photoluminesce spectra under the transition frommore » wide to narrow gold stripes. The experimental extinction and photoluminescense spectra are in good agreement with theoretical calculations performed by the rigorous coupled wave analysis. Finally, we study the contribution of individual silicon nanocrystals to the overall photoluminescense intensity, depending on their spacial position inside the structure.« less

Plasmon induced modification of silicon nanocrystals photoluminescence in presence of gold nanostripes

DOE PAGES

Dyakov, S. A.; Zhigunov, D. M.; Marinins, A.; ...

2018-03-20

Here, we report on the results of theoretical and experimental studies of photoluminescense of silicon nanocrystals in the proximity to plasmonic modes of different types. In the studied samples, the type of plasmonic mode is determined by the filling ratio of a one-dimensional array of gold stripes which covers the thin film with silicon nanocrystals on a quartz substrate. We analyze the extinction, photoluminesce spectra and decay kinetics of silicon nanocrystals and show that the incident and emitted light is coupled to the corresponding plasmonic mode. We demonstrate the modification of the extinction and photoluminesce spectra under the transition frommore » wide to narrow gold stripes. The experimental extinction and photoluminescense spectra are in good agreement with theoretical calculations performed by the rigorous coupled wave analysis. Finally, we study the contribution of individual silicon nanocrystals to the overall photoluminescense intensity, depending on their spacial position inside the structure.« less

Local symmetry breaking in SnO2 nanocrystals with cobalt doping and its effect on optical properties.

PubMed

Roy, S; Joshi, Amish G; Chatterjee, S; Ghosh, Anup K

2018-06-07

X-ray photoemission spectroscopy (XPS), X-ray diffraction (XRD) and transmission electron microscopy (TEM) have been used to study the structural and morphological characteristics of cobalt doped tin(iv) oxide (Sn1-xCoxO2; 0 ≤ x ≤ 0.04) nanocrystals synthesized by a chemical co-precipitation technique. Electronic structure analysis using X-ray photoemission spectroscopy (XPS) shows the formation of tin interstitials (Sni) and reduction of oxygen vacancies (VO) in the host lattice on Co doping and that the doped Co exists in mixed valence states of +2 and +3. Using XRD, the preferential position of the Sni and doped Co in the unit cell of the nanocrystals have been estimated. Rietveld refinement of XRD data shows that samples are of single phase and variation of lattice constants follows Vegard's law. XRD and TEM measurements show that the crystallite size of the nanocrystals decrease with increase in Co doping concentration. SAED patterns confirm the monocrystalline nature of the samples. The study of the lattice dynamics using Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy shows the existence of many disorder activated forbidden optical phonon modes, along with the corresponding classical modes, signifying Co induced local symmetry breaking in the nanocrystals. UV-Vis spectroscopy shows that the optical band gap has red shifted with increase in doping concentration. The study of Urbach energy confirms the increase in disorder in the nanocrystals with Co doping. Local symmetry breaking induced UV emission along with violet, blue and green luminescence has been observed from the PL study. The spectral contribution of UV emission decreases and green luminescence increases with increase in doping. Using PL, in conjunction with Raman spectroscopy, the type of oxygen vacancy induced in the nanocrystals on Co doping has been confirmed and the position of the defect levels in the forbidden zone (w.r.t. the optical band gap) has been studied.

Isolating and moving single atoms using silicon nanocrystals

DOEpatents

Carroll, Malcolm S.

2010-09-07

A method is disclosed for isolating single atoms of an atomic species of interest by locating the atoms within silicon nanocrystals. This can be done by implanting, on the average, a single atom of the atomic species of interest into each nanocrystal, and then measuring an electrical charge distribution on the nanocrystals with scanning capacitance microscopy (SCM) or electrostatic force microscopy (EFM) to identify and select those nanocrystals having exactly one atom of the atomic species of interest therein. The nanocrystals with the single atom of the atomic species of interest therein can be sorted and moved using an atomic force microscope (AFM) tip. The method is useful for forming nanoscale electronic and optical devices including quantum computers and single-photon light sources.

Hydrothermal synthesis of tungsten doped tin dioxide nanocrystals

NASA Astrophysics Data System (ADS)

Zhou, Cailong; Li, Yufeng; Chen, Yiwen; Lin, Jing

2018-01-01

Tungsten doped tin dioxide (WTO) nanocrystals were synthesized through a one-step hydrothermal method. The structure, composition and morphology of WTO nanocrystals were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, energy dispersive x-ray spectroscopy, UV-vis diffuse reflectance spectra, zeta potential analysis and high-resolution transmission electron microscopy. Results show that the as-prepared WTO nanocrystals were rutile-type structure with the size near 13 nm. Compared with the undoped tin dioxide nanocrystals, the WTO nanocrystals possessed better dispersity in ethanol phase and formed transparent sol.

Atomic force microscopy nanomanipulation of silicon nanocrystals for nanodevice fabrication

NASA Astrophysics Data System (ADS)

Decossas, Sébastien; Mazen, Frédéric; Baron, Thierry; Brémond, Georges; Souifi, Abdelkader

2003-12-01

An atomic force microscopy (AFM) tip has been used to manipulate silicon nanocrystals deposited by low-pressure chemical vapour deposition on thermally oxidized p-type Si wafer. Three nanomanipulation methods are presented. The first one catches a nanocrystal with the AFM tip and deposits it elsewhere: the tip is used as an electrostatic 'nano-crane'. The second one simultaneously manipulates a set of nanocrystals in order to draw well-defined unidimensional lines: the tip is used as a 'nano-broom'. The third one manipulates individual nanocrystals with a precision of about 10 nm using both oscillating and contact AFM modes. Switching from strong interaction forces (chemical) to weak ones (van der Waals, electrostatic or capillarity) is the basis of these manipulation methods. We have applied the second method to connect two electrodes drawn by e-beam and lift-off with a 70 nm long silicon nanocrystal chain. Current versus voltage characterization of the nanofabricated device shows that the increase in nanocrystal density gives rise to conduction between the connected electrodes. Resonant tunnelling effects resulting from Si nanocrystal (nc-Si) multiple tunnel junctions have been observed at 300 K. We also show that offset charges directly influence the position of the resonant tunnelling peaks. Finally, the possibility of manipulating nc-Si with a diameter of around 5 nm is shown to be a promising way to fabricate single electron devices operating at room temperature and fully compatible with silicon technology.

A dual-colored bio-marker made of doped ZnO nanocrystals

NASA Astrophysics Data System (ADS)

Wu, Y. L.; Fu, S.; Tok, A. I. Y.; Zeng, X. T.; Lim, C. S.; Kwek, L. C.; Boey, F. C. Y.

2008-08-01

Bio-compatible ZnO nanocrystals doped with Co, Cu and Ni cations, surface capped with two types of aminosilanes and titania are synthesized by a soft chemical process. Due to the small particle size (2-5 nm), surface functional groups and the high photoluminescence emissions at the UV and blue-violet wavelength ranges, bio-imaging on human osteosarcoma (Mg-63) cells and histiocytic lymphoma U-937 monocyte cells showed blue emission at the nucleus and bright turquoise emission at the cytoplasm simultaneously. This is the first report on dual-color bio-images labeled by one semiconductor nanocrystal colloidal solution. Bright green emission was detected on mung bean seedlings labeled by all the synthesized ZnO nanocrystals. Cytotoxicity tests showed that the aminosilanes capped nanoparticles are non-toxic. Quantum yields of the nanocrystals varied from 79% to 95%. The results showed the potential of the pure ZnO and Co-doped ZnO nanocrystals for live imaging of both human cells and plant systems.

Controlled Chemical Doping of Semiconductor Nanocrystals Using Redox Buffers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Engel, Jesse H.; Surendranath, Yogesh; Alivisatos, Paul

Semiconductor nanocrystal solids are attractive materials for active layers in next-generation optoelectronic devices; however, their efficient implementation has been impeded by the lack of precise control over dopant concentrations. Herein we demonstrate a chemical strategy for the controlled doping of nanocrystal solids under equilibrium conditions. Exposing lead selenide nanocrystal thin films to solutions containing varying proportions of decamethylferrocene and decamethylferrocenium incrementally and reversibly increased the carrier concentration in the solid by 2 orders of magnitude from their native values. This application of redox buffers for controlled doping provides a new method for the precise control of the majority carrier concentrationmore » in porous semiconductor thin films.« less

Effect of argon implantation on solid-state dewetting: control of size and surface density of silicon nanocrystals.

PubMed

Almadori, Y; Borowik, Ł; Chevalier, N; Barbé, J-C

2017-01-27

Thermally induced solid-state dewetting of ultra-thin films on insulators is a process of prime interest, since it is capable of easily forming nanocrystals. If no particular treatment is performed to the film prior to the solid-state dewetting, it is already known that the size, the shape and the density of nanocrystals is governed by the initial film thickness. In this paper, we report a novel approach to control the size and the surface density of silicon nanocrystals based on an argon-implantation preliminary surface treatment. Using 7.5 nm thin layers of silicon, we show that increasing the implantation dose tends to form smaller silicon nanocrystals with diameter and height lower than 50 nm and 30 nm, respectively. Concomitantly, the surface density is increased by a factor greater than 20, going from 5 μm -2 to values over 100 μm -2 .

Inorganic Nanocrystals Functionalized Mesoporous Silica Nanoparticles: Fabrication and Enhanced Bio-applications

NASA Astrophysics Data System (ADS)

Zhao, Tiancong; Nguyen, Nam-Trung; Xie, Yang; Sun, Xiaofei; Li, Qin; Li, Xiaomin

2017-12-01

Mesoporous SiO2 nanoparticles (MSNs) are one of the most promising materials for bio-related applications due to advantages such as good biocompatibility, tunable mesopores and large pore volume. However, unlike the inorganic nanocrystals with abundant physical properties, MSNs alone lack functional features. Thus, they are not sufficiently suitable for bio-applications that require special functions. Consequently, MSNs are often functionalized by incorporating inorganic nanocrystals, which provide a wide range of intriguing properties. This review focuses on inorganic nanocrystals functionalized MSNs, both their fabrication and bio-applications. Some of the most utilized methods for coating mesoporous silica (mSiO2) on nanoparticles were summarized. Magnetic, fluorescence and photothermal inorganic nanocrystals functionalized MSNs were taken as examples to demonstrate the bio-applications. Furthermore, asymmetry of MSNs and their effects on functions were also highlighted.

Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size.

PubMed

Hiller, Daniel; López-Vidrier, Julian; Gutsch, Sebastian; Zacharias, Margit; Nomoto, Keita; König, Dirk

2017-04-13

Phosphorus doping of silicon nanostructures is a non-trivial task due to problems with confinement, self-purification and statistics of small numbers. Although P-atoms incorporated in Si nanostructures influence their optical and electrical properties, the existence of free majority carriers, as required to control electronic properties, is controversial. Here, we correlate structural, optical and electrical results of size-controlled, P-incorporating Si nanocrystals with simulation data to address the role of interstitial and substitutional P-atoms. Whereas atom probe tomography proves that P-incorporation scales with nanocrystal size, luminescence spectra indicate that even nanocrystals with several P-atoms still emit light. Current-voltage measurements demonstrate that majority carriers must be generated by field emission to overcome the P-ionization energies of 110-260 meV. In absence of electrical fields at room temperature, no significant free carrier densities are present, which disproves the concept of luminescence quenching via Auger recombination. Instead, we propose non-radiative recombination via interstitial-P induced states as quenching mechanism. Since only substitutional-P provides occupied states near the Si conduction band, we use the electrically measured carrier density to derive formation energies of ~400 meV for P-atoms on Si nanocrystal lattice sites. Based on these results we conclude that ultrasmall Si nanovolumes cannot be efficiently P-doped.

Tuning the morphology, stability and photocatalytic activity of TiO{sub 2} nanocrystal colloids by tungsten doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Haiping; Liao, Jianhua; School of Pharmaceutical Sciences, Gannan Medical University, Ganzhou, Jiangxi 341000

2014-03-01

Graphical abstract: - Highlights: • W{sup 6+}-doped TiO{sub 2} nanocrystal colloids were prepared by hydrothermal methods. • The properties of TiO{sub 2} nanocrystal colloids can be tuned by tungsten doping. • W{sup 6+}-doped TiO{sub 2} nanocrystal colloids show higher stability and dispersity. • W{sup 6+}-doped TiO{sub 2} nanocrystal colloids show higher photocatalytic activity. - Abstract: The effects of tungsten doping on the morphology, stability and photocatalytic activity of TiO{sub 2} nanocrystal colloids were investigated. The nanostructure, chemical state of Ti, W, O, and the properties of tungsten doped TiO{sub 2} samples were investigated carefully by TEM, XRD, XPS, UV–vis, PLmore » and photocatalytic degradation experiments. And the structure–activity relationship was discussed according to the analysis and measurement results. The analysis results reveal that the morphology, zeta potential and photocatalytic activity of TiO{sub 2} nanocrystals can be easily tuned by changing the tungsten doping concentration. The tungsten doped TiO{sub 2} colloid combines the characters of high dispersity and high photocatalytic activity.« less

Study on fabrication technology of silicon-based silica array waveguide grating

NASA Astrophysics Data System (ADS)

Sun, Yanjun; Dong, Lianhe; Leng, Yanbing

2009-05-01

Array waveguide grating (AWG) is an important plane optical element in dense wavelength division multiplex/demultiplex system. There are many virtue, channel quantity larger,lower loss, lower crosstalk, size smaller and high reliability etc. This article describs AWG fabrication technics utilizing IC(Integrated Circles) techniques, based on sixteen channel Silicon-Based Silica Array Waveguide Grating, put emphasis on discussing doping and deposition of waveguide core film,technics theory and interrelated parameter condition of photoetch and ion etching. Experiment result indicates that it depens on electrode structure, energy of radio-frequency electrode gas component, pressure ,flowing speed and substrate temperature by CVD depositing film .During depositing waveguide film by PE-CVD, the silicon is not reacted, When temperature becomes lower,it is reacted and it is easy to realize the control of film thickness and time with a result of film thickness uniformity reaching about 4% after optimizing deposition parameter and condition. We get the result of high etching speed rate, outline zoom, and side frame smooth by photoresist/Cr multiple mask and optimizing etching technics.

Near white light emission of silicon nanocrystals

NASA Astrophysics Data System (ADS)

Lee, Soojin; Han, Il-Ki; Cho, Woon-Jo

2003-11-01

Silicon nanoparticles in the range from 2 nm to 5 nm was prepared from Zintl salt, soldium silicide (NaSi) by sonochemical method. This synthesis permits the reaction completed as fast as in a few hours and the easy alkyl-modification of nanocrystals surface at room temperature and ambient pressure. The average size of nanoparticles measured by the dynamic light scattering analysis was 2.7 nm. The high-resolution transmission electron micrograph cofirmed the material identity of nanoparticles as crystalline silicon. FT-IR spectra are consistent with the surface states of nanocrystals that is chlorine- or butyl-capped. The emission peak center moved to longer wavelength (up to 430 nm) with the reaction time, under a 325 nm excitation. The luminescence of silicon colloids looks bright bluish-white under excitation using a commercial low-intensity UV lamp.

Exciton-to-Dopant Energy Transfer in Mn-Doped Cesium Lead Halide Perovskite Nanocrystals.

PubMed

Parobek, David; Roman, Benjamin J; Dong, Yitong; Jin, Ho; Lee, Elbert; Sheldon, Matthew; Son, Dong Hee

2016-12-14

We report the one-pot synthesis of colloidal Mn-doped cesium lead halide (CsPbX 3 ) perovskite nanocrystals and efficient intraparticle energy transfer between the exciton and dopant ions resulting in intense sensitized Mn luminescence. Mn-doped CsPbCl 3 and CsPb(Cl/Br) 3 nanocrystals maintained the same lattice structure and crystallinity as their undoped counterparts with nearly identical lattice parameters at ∼0.2% doping concentrations and no signature of phase separation. The strong sensitized luminescence from d-d transition of Mn 2+ ions upon band-edge excitation of the CsPbX 3 host is indicative of sufficiently strong exchange coupling between the charge carriers of the host and dopant d electrons mediating the energy transfer, essential for obtaining unique properties of magnetically doped quantum dots. Highly homogeneous spectral characteristics of Mn luminescence from an ensemble of Mn-doped CsPbX 3 nanocrystals and well-defined electron paramagnetic resonance spectra of Mn 2+ in host CsPbX 3 nanocrystal lattices suggest relatively uniform doping sites, likely from substitutional doping at Pb 2+ . These observations indicate that CsPbX 3 nanocrystals, possessing many superior optical and electronic characteristics, can be utilized as a new platform for magnetically doped quantum dots expanding the range of optical, electronic, and magnetic functionality.

Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere

NASA Astrophysics Data System (ADS)

van Sebille, M.; Fusi, A.; Xie, L.; Ali, H.; van Swaaij, R. A. C. M. M.; Leifer, K.; Zeman, M.

2016-09-01

We report the effect of hydrogen on the crystallization process of silicon nanocrystals embedded in a silicon oxide matrix. We show that hydrogen gas during annealing leads to a lower sub-band gap absorption, indicating passivation of defects created during annealing. Samples annealed in pure nitrogen show expected trends according to crystallization theory. Samples annealed in forming gas, however, deviate from this trend. Their crystallinity decreases for increased annealing time. Furthermore, we observe a decrease in the mean nanocrystal size and the size distribution broadens, indicating that hydrogen causes a size reduction of the silicon nanocrystals.

Impact of Colloidal Silica on Silicone Oil-Silica Mixed Antifoams

NASA Astrophysics Data System (ADS)

Yuan, Zheng

Antifoams are utilized as an industrial additive to control undesired foam during processing. This study focuses on the impact of silica on the antifoam stability. Antifoam stability refers to the ability to maintain efficiency in foam destruction after prolonged shelf storage. Common antifoams are a mixture of hydrophobic silica particles and silicone oil. Based on the general mechanisms of antifoam action discussed in Chapter 1, silica particles play a significant role in foam destruction. Silica particles contribute to foam control by facilitating the entry and the penetration depth of oil-silica globules into surfactant-water films (foam bubble walls). The size, morphology and hydrophobicity of silica can be manipulated to generate optimal antifoam globules. For example, the two silicas with good shelf life performance (8375 and 9512) had the largest silica particles and both showed a tendency to aggregate in toluene solution. We conclude that improved shelf life is related to the propensity of PDMS oil to adsorb on silica, which leads to aggregation and particle size increase. We measured the time-evolution of dynamic light scattering (DLS) from 3-vol% antifoam dissolved in toluene (Chapter 2). For the sample with the largest hydrodynamic radius (9512) the scattered intensity decreased significantly after applying ultrasonic dispersion. Decreasing intensity also occurred for 8375 albeit at later times. The decrease of intensity is attributed to the growth and precipitation of oil-silica globules. The concentration dependence of light scattering confirmed the growth-precipitation hypothesis. FT-IR (Chapter 3) was consistent with precipitation due to oil adsorption, but the data were not definitive. Chapter 4 examines the time-evolution of silica structures by static light scattering and X-ray scattering. The combined data are consistent with a hierarchical structure for silica. Agglomeration occurred fastest for 9512, which is consistent with DLS observations

Magnetic and upconverted luminescent properties of multifunctional lanthanide doped cubic KGdF4 nanocrystals.

PubMed

Yang, L W; Zhang, Y Y; Li, J J; Li, Y; Zhong, J X; Chu, Paul K

2010-12-01

Lanthanide (Ln3+) doped KGdF4 (Ln=Yb3+, Er3+, Ho3+, Tm3+) nanocrystals with a mean diameter of approximately 12 nm were synthesized by a hydrothermal method using oleic acid as a stabilizing agent at 180 °C. The nanocrystals crystallize in the cubic phase as α-NaGdF4. When excited by a 980 nm laser, these Ln3+ doped nanocrystals exhibit multicolor up-conversion (UC) emissions in red, yellow, blue and white. The calculated color coordinates demonstrate that white UC emission (CIE-X=0.352, CIE-Y=0.347) can be obtained by varying the dopant concentrations in the Yb3+/Ho3+/Tm3+ triply-doped nanocrystals to yield different RGB emission intensities. The measured field dependence of magnetization (M-H curves) of the KGdF4 nanocrystals shows their paramagnetic characteristics that can be ascribed to the non-interacting localized nature of the magnetic moment of Gd3+ ions. Moreover, low temperature thermal treatment can enhance UC properties, magnetization and magnetic mass susceptibility of Ln3+ doped KGdF4 nanocrystals. The multifunctional Ln3+ doped KGdF4 nanocrystals have potential applications in color displays, bioseparation, and optical-magnetic dual modal nanoprobes in biomedical imaging.

Magnetic and upconverted luminescent properties of multifunctional lanthanide doped cubic KGdF4nanocrystals

NASA Astrophysics Data System (ADS)

Yang, L. W.; Zhang, Y. Y.; Li, J. J.; Li, Y.; Zhong, J. X.; Chu, Paul K.

2010-12-01

Lanthanide (Ln3+) doped KGdF4 (Ln = Yb3+, Er3+, Ho3+, Tm3+) nanocrystals with a mean diameter of approximately 12 nm were synthesized by a hydrothermal method using oleic acid as a stabilizing agent at 180 °C. The nanocrystals crystallize in the cubic phase as α-NaGdF4. When excited by a 980 nm laser, these Ln3+ doped nanocrystals exhibit multicolor up-conversion (UC) emissions in red, yellow, blue and white. The calculated color coordinates demonstrate that white UC emission (CIE-X = 0.352, CIE-Y = 0.347) can be obtained by varying the dopant concentrations in the Yb3+/Ho3+/Tm3+ triply-doped nanocrystals to yield different RGB emission intensities. The measured field dependence of magnetization (M-H curves) of the KGdF4nanocrystals shows their paramagnetic characteristics that can be ascribed to the non-interacting localized nature of the magnetic moment of Gd3+ ions. Moreover, low temperature thermal treatment can enhance UC properties, magnetization and magnetic mass susceptibility of Ln3+ doped KGdF4nanocrystals. The multifunctional Ln3+ doped KGdF4nanocrystals have potential applications in color displays, bioseparation, and optical-magnetic dual modal nanoprobes in biomedical imaging.

High-speed all-optical logic inverter based on stimulated Raman scattering in silicon nanocrystal.

PubMed

Sen, Mrinal; Das, Mukul K

2015-11-01

In this paper, we propose a new device architecture for an all-optical logic inverter (NOT gate), which is cascadable with a similar device. The inverter is based on stimulated Raman scattering in silicon nanocrystal waveguides, which are embedded in a silicon photonic crystal structure. The Raman response function of silicon nanocrystal is evaluated to explore the transfer characteristic of the inverter. A maximum product criterion for the noise margin is taken to analyze the cascadability of the inverter. The time domain response of the inverter, which explores successful inversion operation at 100 Gb/s, is analyzed. Propagation delay of the inverter is on the order of 5 ps, which is less than the delay in most of the electronic logic families as of today. Overall dimension of the device is around 755  μm ×15  μm, which ensures integration compatibility with the matured silicon industry.

Silica substrate or portion formed from oxidation of monocrystalline silicon

DOEpatents

Matzke, Carolyn M.; Rieger, Dennis J.; Ellis, Robert V.

2003-07-15

A method is disclosed for forming an inclusion-free silica substrate using a monocrystalline silicon substrate as the starting material and oxidizing the silicon substrate to convert it entirely to silica. The oxidation process is performed from both major surfaces of the silicon substrate using a conventional high-pressure oxidation system. The resulting product is an amorphous silica substrate which is expected to have superior etching characteristics for microfabrication than conventional fused silica substrates. The present invention can also be used to convert only a portion of a monocrystalline silicon substrate to silica by masking the silicon substrate and locally thinning a portion the silicon substrate prior to converting the silicon portion entirely to silica. In this case, the silica formed by oxidizing the thinned portion of the silicon substrate can be used, for example, as a window to provide optical access through the silicon substrate.

Silica-on-silicon waveguide quantum circuits.

PubMed

Politi, Alberto; Cryan, Martin J; Rarity, John G; Yu, Siyuan; O'Brien, Jeremy L

2008-05-02

Quantum technologies based on photons will likely require an integrated optics architecture for improved performance, miniaturization, and scalability. We demonstrate high-fidelity silica-on-silicon integrated optical realizations of key quantum photonic circuits, including two-photon quantum interference with a visibility of 94.8 +/- 0.5%; a controlled-NOT gate with an average logical basis fidelity of 94.3 +/- 0.2%; and a path-entangled state of two photons with fidelity of >92%. These results show that it is possible to directly "write" sophisticated photonic quantum circuits onto a silicon chip, which will be of benefit to future quantum technologies based on photons, including information processing, communication, metrology, and lithography, as well as the fundamental science of quantum optics.

Optical Gaps in Pristine and Heavily Doped Silicon Nanocrystals: DFT versus Quantum Monte Carlo Benchmarks.

PubMed

Derian, R; Tokár, K; Somogyi, B; Gali, Á; Štich, I

2017-12-12

We present a time-dependent density functional theory (TDDFT) study of the optical gaps of light-emitting nanomaterials, namely, pristine and heavily B- and P-codoped silicon crystalline nanoparticles. Twenty DFT exchange-correlation functionals sampled from the best currently available inventory such as hybrids and range-separated hybrids are benchmarked against ultra-accurate quantum Monte Carlo results on small model Si nanocrystals. Overall, the range-separated hybrids are found to perform best. The quality of the DFT gaps is correlated with the deviation from Koopmans' theorem as a possible quality guide. In addition to providing a generic test of the ability of TDDFT to describe optical properties of silicon crystalline nanoparticles, the results also open up a route to benchmark-quality DFT studies of nanoparticle sizes approaching those studied experimentally.

A Silicon Nanocrystal Schottky Junction Solar Cell produced from Colloidal Silicon Nanocrystals

PubMed Central

2010-01-01

Solution-processed semiconductors are seen as a promising route to reducing the cost of the photovoltaic device manufacture. We are reporting a single-layer Schottky photovoltaic device that was fabricated by spin-coating intrinsic silicon nanocrystals (Si NCs) from colloidal suspension. The thin-film formation process was based on Si NCs without any ligand attachment, exchange, or removal reactions. The Schottky junction device showed a photovoltaic response with a power conversion efficiency of 0.02%, a fill factor of 0.26, short circuit-current density of 0.148 mA/cm2, and open-circuit voltage of 0.51 V. PMID:20676200

A Radiation-Tolerant, Low-Power Non-Volatile Memory Based on Silicon Nanocrystal Quantum Dots

NASA Technical Reports Server (NTRS)

Bell, L. D.; Boer, E. A.; Ostraat, M. L.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.; deBlauwe, J.; Green, M. L.

2001-01-01

Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO2 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled in program/erase threshold voltage swing was seen during 100,000 program and erase cycles. Additional near-term goals for this project include extensive testing for radiation hardness and the development of artificial layered tunnel barrier heterostructures which have the potential for large speed enhancements for read/write of nanocrystal memory elements, compared with conventional flash devices. Additional information is contained in the original extended abstract.

Ensemble brightening and enhanced quantum yield in size-purified silicon nanocrystals

DOE PAGES

Miller, Joseph B.; Van Sickle, Austin R.; Anthony, Rebecca J.; ...

2012-07-18

Here, we report on the quantum yield, photoluminescence (PL) lifetime and ensemble photoluminescent stability of highly monodisperse plasma-synthesized silicon nanocrystals (SiNCs) prepared though density-gradient ultracentrifugation in mixed organic solvents. Improved size uniformity leads to a reduction in PL line width and the emergence of entropic order in dry nanocrystal films. We find excellent agreement with the anticipated trends of quantum confinement in nanocrystalline silicon, with a solution quantum yield that is independent of nanocrystal size for the larger fractions but decreases dramatically with size for the smaller fractions. We also find a significant PL enhancement in films assembled from themore » fractions, and we use a combination of measurement, simulation and modeling to link this ‘brightening’ to a temporally enhanced quantum yield arising from SiNC interactions in ordered ensembles of monodisperse nanocrystals. Using an appropriate excitation scheme, we exploit this enhancement to achieve photostable emission.« less

Generation of silicon nanocrystals by damage free continuous wave laser annealing of substrate-bound SiO{sub x} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fricke-Begemann, T., E-mail: fricke-begemann@llg-ev.de; Ihlemann, J.; Wang, N.

2015-09-28

Silicon nanocrystals have been generated by laser induced phase separation in SiO{sub x} films. A continuous wave laser emitting at 405 nm is focused to a 6 μm diameter spot on 530 nm thick SiO{sub x} films deposited on fused silica substrates. Irradiation of lines is accomplished by focus scanning. The samples are investigated by atomic force microscopy, TEM, Raman spectroscopy, and photoluminescence measurements. At a laser power of 35 mW corresponding to an irradiance of about 1.2 × 10{sup 5 }W/cm{sup 2}, the formation of Si-nanocrystals in the film without any deterioration of the surface is observed. At higher laser power, the centralmore » irradiated region is oxidized to SiO{sub 2} and exhibits some porous character, while the surface remains optically smooth, and nanocrystals are observed beside and beneath this oxidized region. Amorphous Si-nanoclusters are formed at lower laser power and around the lines written at high power.« less

Phenomenological model of photoluminescence degradation and photoinduced defect formation in silicon nanocrystal ensembles under singlet oxygen generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gongalsky, Maxim B., E-mail: mgongalsky@gmail.com; Timoshenko, Victor Yu.

2014-12-28

We propose a phenomenological model to explain photoluminescence degradation of silicon nanocrystals under singlet oxygen generation in gaseous and liquid systems. The model considers coupled rate equations, which take into account the exciton radiative recombination in silicon nanocrystals, photosensitization of singlet oxygen generation, defect formation on the surface of silicon nanocrystals as well as quenching processes for both excitons and singlet oxygen molecules. The model describes well the experimentally observed power law dependences of the photoluminescence intensity, singlet oxygen concentration, and lifetime versus photoexcitation time. The defect concentration in silicon nanocrystals increases by power law with a fractional exponent, whichmore » depends on the singlet oxygen concentration and ambient conditions. The obtained results are discussed in a view of optimization of the photosensitized singlet oxygen generation for biomedical applications.« less

Paramagnetic behavior of Co doped TiO{sub 2} nanocrystals controlled by self-purification mechanism

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anitha, B.; Khadar, M. Abdul, E-mail: mabdulkhadar@rediffmail.com; Banerjee, Alok

Doping in nanocrystals is a challenging process because of the self- purification mechanism which tends to segregate out the dopants resulting in a greater dopant concentration near the surface than at the interior of nanocrystals. In the present work nanocrystals of TiO{sub 2} doped with different atom % of Co were synthesized by peroxide gel method. XRD analysis confirmed the tetragonal anatase structure and HRTEM images showed the rod-like morphology of the samples. Raman modes of anatase phase of TiO{sub 2} along with weak intensity peaks of Co{sub 3}O{sub 4} for higher Co dopant concentrations were observed for the samples.more » EPR measurements revealed the presence of cobalt in +2 oxidation state in the TiO{sub 2} matrix. SQUID measurements indicated paramagnetic behavior of the Co doped TiO{sub 2} nanocrystals. The paramagnetic behavior is attributed to an increased concentration of Co{sup 2+} ions and an increased presence of Co{sub 3}O{sub 4} phase near the surface of the TiO{sub 2} nanocrystals due to self-purification mechanism. - Graphical abstract: Variation of the intensity ratios of XRD peaks as a function of atomic ratio of Co. Inset: variation of structure factor for (101) reflection as a function of atomic ratio of Co. Display Omitted - Highlights: • Co doped TiO{sub 2} nanocrystals were synthesized by peroxide gel method. • HRTEM images showed Co doped TiO{sub 2} nanocrystals to be rod-like. • EPR spectra showed +2 oxidation states for Co in the samples. • Co doped TiO{sub 2} nanocrystals showed paramagnetic behavior.« less

Photoluminescent silicon nanocrystals with chlorosilane surfaces - synthesis and reactivity

NASA Astrophysics Data System (ADS)

Höhlein, Ignaz M. D.; Kehrle, Julian; Purkait, Tapas K.; Veinot, Jonathan G. C.; Rieger, Bernhard

2014-12-01

We present a new efficient two-step method to covalently functionalize hydride terminated silicon nanocrystals with nucleophiles. First a reactive chlorosilane layer was formed via diazonium salt initiated hydrosilylation of chlorodimethyl(vinyl)silane which was then reacted with alcohols, silanols and organolithium reagents. With organolithium compounds a side reaction is observed in which a direct functionalization of the silicon surface takes place.We present a new efficient two-step method to covalently functionalize hydride terminated silicon nanocrystals with nucleophiles. First a reactive chlorosilane layer was formed via diazonium salt initiated hydrosilylation of chlorodimethyl(vinyl)silane which was then reacted with alcohols, silanols and organolithium reagents. With organolithium compounds a side reaction is observed in which a direct functionalization of the silicon surface takes place. Electronic supplementary information (ESI) available: Detailed experimental procedures and additional NMR, PL, EDX, DLS and TEM data. See DOI: 10.1039/C4NR05888G

Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells

PubMed Central

2014-01-01

The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n+ emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion. PMID:25520602

Silica-sol-based spin-coating barrier layer against phosphorous diffusion for crystalline silicon solar cells.

PubMed

Uzum, Abdullah; Fukatsu, Ken; Kanda, Hiroyuki; Kimura, Yutaka; Tanimoto, Kenji; Yoshinaga, Seiya; Jiang, Yunjian; Ishikawa, Yasuaki; Uraoka, Yukiharu; Ito, Seigo

2014-01-01

The phosphorus barrier layers at the doping procedure of silicon wafers were fabricated using a spin-coating method with a mixture of silica-sol and tetramethylammonium hydroxide, which can be formed at the rear surface prior to the front phosphorus spin-on-demand (SOD) diffusion and directly annealed simultaneously with the front phosphorus layer. The optimization of coating thickness was obtained by changing the applied spin-coating speed; from 2,000 to 8,000 rpm. The CZ-Si p-type silicon solar cells were fabricated with/without using the rear silica-sol layer after taking the sheet resistance measurements, SIMS analysis, and SEM measurements of the silica-sol material evaluations into consideration. For the fabrication of solar cells, a spin-coating phosphorus source was used to form the n(+) emitter and was then diffused at 930°C for 35 min. The out-gas diffusion of phosphorus could be completely prevented by spin-coated silica-sol film placed on the rear side of the wafers coated prior to the diffusion process. A roughly 2% improvement in the conversion efficiency was observed when silica-sol was utilized during the phosphorus diffusion step. These results can suggest that the silica-sol material can be an attractive candidate for low-cost and easily applicable spin-coating barrier for any masking purpose involving phosphorus diffusion.

Synthesis of Mn doped ZnS nanocrystals: Crystallographic and morphological study

NASA Astrophysics Data System (ADS)

Shaikh, Azharuddin Z.; Shirsath, Narendra B.; Sonawane, Prabhakar S.

2018-05-01

The influence of doping concentration on the physical properties of ZnS nanocrystals synthesized using coprecipitation method at room temperature is reported in this paper. In particular, we have studied the structural properties of Zn1-xMnxS where (x=0.01, 0.03, 0.05) by X-ray diffraction. X-ray peak broadening analysis used to calculate the crystalline sizes, lattice parameters, number of unit cell per particle and volume of unit cell. Crystalline ZnS with a cubic structure is confirmed by XRD results. The grain size of pure and Mn doped samples were found in the range of 7nm to 9nm. All the physical parameters of cubic ZnS nanocrystals were calculated are similar with standard values. The scanning electron microscope (SEM) which revealed that the synthesized nanocrystals are well-crystalline and possessing cubic phase.

Cation coordination reactions on nanocrystals: surface/interface, doping control and advanced photocatalysis applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Zhang, Jiatao

2016-10-01

Abstract: Including the shape and size effect, the controllable doping, hetero-composite and surface/interface are the prerequisite of colloidal nanocrystals for exploring their optoelectronic properties, such as fluorescence, plasmon-exciton coupling, efficient electron/hole separation, and enhanced photocatalysis applications. By controlling soft acid-base coordination reactions between cation molecular complexes and colloidal nanocrystals, we showed that chemical thermodynamics could drive nanoscale monocrystalline growth of the semiconductor shell on metal nano-substrates and the substitutional heterovalent doping in semiconductor nanocrystals. We have demonstrated evolution of relative position of Au and II-VI semiconductor in Au-Semi from symmetric to asymmetric configuration, different phosphines initiated morphology engineering, oriented attachment of quantum dots into micrometer nanosheets with synergistic control of surface/interface and doing, which can further lead to fine tuning of plasmon-exciton coupling. Therefore, different hydrogen photocatalytic performance, Plasmon enhanced photocatalysis properties have been achieved further which lead to the fine tuning of plasmon-exciton coupling. Substitutional heterovalent doping here enables the tailoring of optical, electronic properties and photocatalysis applications of semiconductor nanocrystals because of electronic impurities (p-, n-type doping) control. References: (1) J. Gui, J. Zhang*, et al. Angew. Chem. Int. Ed. 2015, 54, 3683. (2) Q. Zhao, J. Zhang*, etc., Adv. Mater. 2014, 26, 1387. (3) J. Liu, Q. Zhao, S. G. Wang*, J. Zhang*, etc., Adv. Mater. 2015, 27-2753-2761. (4) H. Qian, J. Zhang*, etc., NPG Asia Mater. (2015) 7, e152. (5) M. Ji, M. Xu, etc., J. Zhang*, Adv. Mater. 2016, in proof. (6) S. Yu, J. T. Zhang, Y. Tang, M. Ouyang*, Nano Lett. 2015, 15, 6282-6288. (7) J. Zhang, Y. Tang, K. Lee and M. Ouyang*, Science 2010, 327, 1634. (8) J. Zhang, Y. Tang, K. Lee, M. Ouyang*, Nature 2010, 466

Preparation of Nanocomposite Plasmonic Films Made from Cellulose Nanocrystals or Mesoporous Silica Decorated with Unidirectionally Aligned Gold Nanorods.

PubMed

Campbell, Michael G; Liu, Qingkun; Sanders, Aric; Evans, Julian S; Smalyukh, Ivan I

2014-04-11

Using liquid crystalline self-assembly of cellulose nanocrystals, we achieve long-range alignment of anisotropic metal nanoparticles in colloidal nanocrystal dispersions that are then used to deposit thin structured films with ordering features highly dependent on the deposition method. These hybrid films are comprised of gold nanorods unidirectionally aligned in a matrix that can be made of ordered cellulose nanocrystals or silica nanostructures obtained by using cellulose-based nanostructures as a replica. The ensuing long-range alignment of gold nanorods in both cellulose-based and nanoporous silica films results in a polarization-sensitive surface plasmon resonance. The demonstrated device-scale bulk nanoparticle alignment may enable engineering of new material properties arising from combining the orientational ordering of host nanostructures and properties of the anisotropic plasmonic metal nanoparticles. Our approach may also allow for scalable fabrication of plasmonic polarizers and nanoporous silica structures with orientationally ordered anisotropic plasmonic nanoinclusions.

Modulation Doping of Silicon using Aluminium-induced Acceptor States in Silicon Dioxide

PubMed Central

König, Dirk; Hiller, Daniel; Gutsch, Sebastian; Zacharias, Margit; Smith, Sean

2017-01-01

All electronic, optoelectronic or photovoltaic applications of silicon depend on controlling majority charge carriers via doping with impurity atoms. Nanoscale silicon is omnipresent in fundamental research (quantum dots, nanowires) but also approached in future technology nodes of the microelectronics industry. In general, silicon nanovolumes, irrespective of their intended purpose, suffer from effects that impede conventional doping due to fundamental physical principles such as out-diffusion, statistics of small numbers, quantum- or dielectric confinement. In analogy to the concept of modulation doping, originally invented for III-V semiconductors, we demonstrate a heterostructure modulation doping method for silicon. Our approach utilizes a specific acceptor state of aluminium atoms in silicon dioxide to generate holes as majority carriers in adjacent silicon. By relocating the dopants from silicon to silicon dioxide, Si nanoscale doping problems are circumvented. In addition, the concept of aluminium-induced acceptor states for passivating hole selective tunnelling contacts as required for high-efficiency photovoltaics is presented and corroborated by first carrier lifetime and tunnelling current measurements. PMID:28425460

A study on the tensile properties of silicone rubber/polypropylene fibers/silica hybrid nanocomposites.

PubMed

Ziraki, Sahar; Zebarjad, Seyed Mojtaba; Hadianfard, Mohammad Jafar

2016-04-01

Metacarpophalangeal joint implants have been usually made of silicone rubber. In the current study, silica nano particles and polypropylene fibers were added to silicone rubber to improve silicone properties. The effect of the addition of silica nano particles and polypropylene fibers on the tensile behavior of the resultant composites were investigated. Composite samples with different content of PP fibers and Silica nano particles (i. e. 0, 1 and 2wt%) as well as the hybrid composite of silicone rubber with 1wt% SiO2 and 1wt% PP fiber were prepared. Tensile tests were done at constant cross head speed. To study the body fluid effect on the mechanical properties of silicone rubber composites, samples soaked in simulated body fluid (SBF) at 37°C were also tested. The morphology of the samples were studied by scanning electron microscope. Results of analysis revealed that an increase in PP fibers and silica nano particles content to 2wt%, increases the tensile strength of silicone rubber of about 75% and 42% respectively. It was found out that the strength of the samples decreases after being soaked in simulated body fluid, though composites with PP fibers as the reinforcement showed less property degradation. Copyright © 2016 Elsevier Ltd. All rights reserved.

Bidisperse silica nanoparticles close-packed monolayer on silicon substrate by three step spin method

NASA Astrophysics Data System (ADS)

Khanna, Sakshum; Marathey, Priyanka; Utsav, Chaliawala, Harsh; Mukhopadhyay, Indrajit

2018-05-01

We present the studies on the structural properties of monolayer Bidisperse silica (SiO2) nanoparticles (BDS) on Silicon (Si-100) substrate using spin coating technique. The Bidisperse silica nanoparticle was synthesised by the modified sol-gel process. Nanoparticles on the substrate are generally assembled in non-close/close-packed monolayer (CPM) form. The CPM form is obtained by depositing the colloidal suspension onto the silicon substrate using complex techniques. Here we report an effective method for forming a monolayer of bidisperse silica nanoparticle by three step spin coating technique. The samples were prepared by mixing the monodisperse solutions of different particles size 40 and 100 nm diameters. The bidisperse silica nanoparticles were self-assembled on the silicon substrate forming a close-packed monolayer film. The scanning electron microscope images of bidisperse films provided in-depth film structure of the film. The maximum surface coverage obtained was around 70-80%.

Controlled synthesis of bright and compatible lanthanide-doped upconverting nanocrystals

DOEpatents

Cohen, Bruce E.; Ostrowski, Alexis D.; Chan, Emory M.; Gargas, Daniel J.; Katz, Elan M.; Schuck, P. James; Milliron, Delia J.

2017-01-31

Certain nanocrystals possess exceptional optical properties that may make them valuable probes for biological imaging, but rendering these nanoparticles biocompatible requires that they be small enough not to perturb cellular systems. This invention describes a phosphorescent upconverting sub-10 nm nanoparticle comprising a lanthanide-doped hexagonal .beta.-phase NaYF.sub.4 nanocrystal and methods for making the same.

Cubic to tetragonal phase transition of Tm{sup 3+} doped nanocrystals in oxyfluoride glass ceramics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Yiming; Fu, Yuting; Shi, Yahui

2016-02-15

Tm{sup 3+} ions doped β-PbF{sub 2} nanocrystals in oxyfluoride glass ceramics with different doping concentrations and thermal temperatures are prepared by a traditional melt-quenching and thermal treatment method to investigate the structure and the phase transition of Tm{sup 3+} doped nanocrystals. The structures are characterized by X-ray diffraction Rietveld analysis and confirmed with numerical simulation. The phase transitions are proved further by the emission spectra. Both of the doping concentration and thermal temperature can induce an O{sub h} to D{sub 4h} site symmetry distortion and a cubic to tetragonal phase transition. The luminescence of Tm{sup 3+} doped nanocrystals at 800more » nm was modulated by the phase transition of the surrounding crystal field.« less

Incorporation of dopant impurities into a silicon oxynitride matrix containing silicon nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ehrhardt, Fabien; Muller, Dominique; Slaoui, Abdelilah, E-mail: abdelilah.slaoui@unistra.fr

2016-05-07

Dopant impurities, such as gallium (Ga), indium (In), and phosphorus (P), were incorporated into silicon-rich silicon oxynitride (SRSON) thin films by the ion implantation technique. To form silicon nanoparticles, the implanted layers were thermally annealed at temperatures up to 1100 °C for 60 min. This thermal treatment generates a phase separation of the silicon nanoparticles from the SRSON matrix in the presence of the dopant atoms. We report on the position of the dopant species within the host matrix and relative to the silicon nanoparticles, as well as on the effect of the dopants on the crystalline structure and the size ofmore » the Si nanoparticles. The energy-filtered transmission electron microscopy technique is thoroughly used to identify the chemical species. The distribution of the dopant elements within the SRSON compound is determined using Rutherford backscattering spectroscopy. Energy dispersive X-ray mapping coupled with spectral imaging of silicon plasmons was performed to spatially localize at the nanoscale the dopant impurities and the silicon nanoparticles in the SRSON films. Three different behaviors were observed according to the implanted dopant type (Ga, In, or P). The In-doped SRSON layers clearly showed separated nanoparticles based on indium, InOx, or silicon. In contrast, in the P-doped SRSON layers, Si and P are completely miscible. A high concentration of P atoms was found within the Si nanoparticles. Lastly, in Ga-doped SRSON the Ga atoms formed large nanoparticles close to the SRSON surface, while the Si nanoparticles were localized in the bulk of the SRSON layer. In this work, we shed light on the mechanisms responsible for these three different behaviors.« less

A novel one-pot room-temperature synthesis route to produce very small photoluminescent silicon nanocrystals

NASA Astrophysics Data System (ADS)

Douglas-Gallardo, Oscar A.; Burgos-Paci, Maxi A.; Mendoza-Cruz, Rubén; Putnam, Karl G.; Josefina Arellano-Jiménez, M.; José-Yacamán, Miguel; Mariscal, Marcelo M.; Macagno, Vicente A.; Sánchez, Cristián G.; Pérez, Manuel A.

2018-03-01

A novel strategy to synthesize photoluminescent silicon nanocrystals (SiNCs) from a reaction between tetraethylorthosilicate (TEOS) and trimethyl-hexadecyl-ammonium borohydride (CTABH4) in organic solvent is presented. The formation reaction occurs spontaneously at room temperature in homogeneous phase. The produced silicon nanocrystals are characterized by using their photoluminescent properties and via HRTEM. In addition, theoretical calculations of the optical absorption spectrum of silicon quantum dots in vacuum with different sizes and surface moieties were performed in order to compare with the experimental findings. The new chemical reaction is simple and can be implemented to produce silicon nanocrystal with regular laboratory materials by performing easy and safe procedures. [Figure not available: see fulltext.

Colloidal infrared reflective and transparent conductive aluminum-doped zinc oxide nanocrystals

DOEpatents

Buonsanti, Raffaella; Milliron, Delia J

2015-02-24

The present invention provides a method of preparing aluminum-doped zinc oxide (AZO) nanocrystals. In an exemplary embodiment, the method includes (1) injecting a precursor mixture of a zinc precursor, an aluminum precursor, an amine, and a fatty acid in a solution of a vicinal diol in a non-coordinating solvent, thereby resulting in a reaction mixture, (2) precipitating the nanocrystals from the reaction mixture, thereby resulting in a final precipitate, and (3) dissolving the final precipitate in an apolar solvent. The present invention also provides a dispersion. In an exemplary embodiment, the dispersion includes (1) nanocrystals that are well separated from each other, where the nanocrystals are coated with surfactants and (2) an apolar solvent where the nanocrystals are suspended in the apolar solvent. The present invention also provides a film. In an exemplary embodiment, the film includes (1) a substrate and (2) nanocrystals that are evenly distributed on the substrate.

Electronic and optical properties of Si and Ge nanocrystals: An ab initio study

NASA Astrophysics Data System (ADS)

Pulci, Olivia; Degoli, Elena; Iori, Federico; Marsili, Margherita; Palummo, Maurizia; Del Sole, Rodolfo; Ossicini, Stefano

2010-01-01

First-principles calculations within density functional theory and many-body perturbation theory have been carried out in order to investigate the structural, electronic and optical properties of undoped and doped silicon nanostructures. We consider Si nanoclusters co-doped with B and P. We find that the electronic band gap is reduced with respect to that of the undoped crystals, suggesting the possibility of impurity based engineering of electronic and optical properties of Si nanocrystals. Finally, motivated by recent suggestions concerning the chance of exploiting Ge dots for photovoltaic nanodevices, we present calculations of the electronic and optical properties of a Ge 35H 36 nanocrystal, and compare the results with those for the corresponding Si 35H 36 nanocrystals and the co-doped Si 33BPH 36.

Fabrication and demonstration of 1 × 8 silicon-silica multi-chip switch based on optical phased array

NASA Astrophysics Data System (ADS)

Katayose, Satomi; Hashizume, Yasuaki; Itoh, Mikitaka

2016-08-01

We experimentally demonstrated a 1 × 8 silicon-silica hybrid thermo-optic switch based on an optical phased array using a multi-chip integration technique. The switch consists of a silicon chip with optical phase shifters and two silica-based planar lightwave circuit (PLC) chips composed of optical couplers and fiber connections. We adopted a rib waveguide as the silicon waveguide to reduce the coupling loss and increase the alignment tolerance for coupling between silicon and silica waveguides. As a result, we achieved a fast switching response of 81 µs, a high extinction ratio of over 18 dB and a low insertion loss of 4.9-8.1 dB including a silicon-silica coupling loss of 0.5 ± 0.3 dB at a wavelength of 1.55 µm.

[Hydrothermal synthesis and luminescence of one-dimensional Mn(2+)-doped CdS nanocrystals].

PubMed

Yuan, Qiu-Li; Zhao, Jin-Tao; Nie, Qiu-Lin

2007-06-01

One-dimensional Mn(2+)-doped CdS nanocrystals were synthesized by the hydrothermal route. The products were characterized by SEM, EDS, XRD, TEM, HRTEM and PL, respectively. The results revealed that dopant Mn2+ completely substitutes Cd2+ in CdS nanocrystals, and the product was of good crystallite. Further more, a complete suppression of the emission from surface states at room temperature when doping with ions Mn2+ has been observed.

Transmutation doping of silicon solar cells

NASA Technical Reports Server (NTRS)

Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

1977-01-01

Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

Effect of solvents on optical band gap of silicon-doped graphene oxide

NASA Astrophysics Data System (ADS)

Tul Ain, Qura; Al-Modlej, Abeer; Alshammari, Abeer; Naeem Anjum, Muhammad

2018-03-01

The objective of this study was to determine the influence on the optical band gap when the same amount of silicon-doped graphene oxide was dissolved in three different solvents namely, distilled water, benzene, and dichloroethane. Ultraviolet-visible spectroscopy was used to analyse the optical properties of the solutions. Among all these solutions distilled water containing silicon-doped graphene oxide has the smallest optical band gap of 2.9 eV and is considered a semiconductor. Other solutions are not considered as semiconductors as they have optical band gaps greater than 4 eV. It was observed that there is an increase in the value of optical band gap of distilled water, benzene, and dichloroethane solutions indicating a rise in the insulating behaviour. In this experiment, graphene oxide was synthesised from graphite powder by modified Hummer’s method and was then doped with silicon. Synthesis and doping of graphene oxide were confirmed by various characterization techniques. Fourier transmission infrared spectroscopy was used for identification of surface functional groups. X-ray diffraction was carried out to confirm the formation of crystalline graphene oxide and silicon doped graphene oxide. In x-ray diffraction pattern, shifting of intensity peak from a 2θ value of 26.5° to 10° confirmed the synthesis of graphene oxide and various intensity peaks at different values of 2θ confirmed doping of graphene oxide with silicon. Scanning electron microscopy images indicated that graphene oxide sheets were decorated with spherical silicon nanoparticles. Energy dispersive x-ray spectroscopy showed that silicon doped graphene oxide powder contained 63.36% carbon, 34.05% oxygen, and 2.6% silicon.

Synthesis of Core-shell Lanthanide-doped Upconversion Nanocrystals for Cellular Applications.

PubMed

Ai, Xiangzhao; Lyu, Linna; Mu, Jing; Hu, Ming; Wang, Zhimin; Xing, Bengang

2017-11-10

Lanthanide-doped upconversion nanocrystals (UCNs) have attracted much attention in recent years based on their promising and controllable optical properties, which allow for the absorption of near-infrared (NIR) light and can subsequently convert it into multiplexed emissions that span over a broad range of regions from the UV to the visible to the NIR. This article presents detailed experimental procedures for high-temperature co-precipitation synthesis of core-shell UCNs that incorporate different lanthanide ions into nanocrystals for efficiently converting deep-tissue penetrable NIR excitation (808 nm) into a strong blue emission at 480 nm. By controlling the surface modification with biocompatible polymer (polyacrylic acid, PAA), the as-prepared UCNs acquires great solubility in buffer solutions. The hydrophilic nanocrystals are further functionalized with specific ligands (dibenzyl cyclooctyne, DBCO) for localization on the cell membrane. Upon NIR light (808 nm) irradiation, the upconverted blue emission can effectively activate the light-gated channel protein on the cell membrane and specifically regulate the cation (e.g., Ca 2+ ) influx in the cytoplasm. This protocol provides a feasible methodology for the synthesis of core-shell lanthanide-doped UCNs and subsequent biocompatible surface modification for further cellular applications.

Single and couple doping ZnO nanocrystals characterized by positron techniques

NASA Astrophysics Data System (ADS)

Pasang, Tenzin; Namratha, Keerthiraj; Guagliardo, Paul; Byrappa, Kullaiah; Ranganathaiah, Chikkakuntappa; Samarin, S.; Williams, J. F.

2015-04-01

Zinc oxide (ZnO) nanocrystals have been synthesized using a mild hydrothermal process using low temperatures and pressures with the advantages of free growth catalyst, low cost and alternative technology. Positron annihilation lifetime spectroscopy and coincidence Doppler broadening (CDB) spectroscopic methods have been used to investigate the roles of single- and co-dopants and native defects of the ZnO nanocrystals controlled by the synthesis process. It is shown that single Ag1+ and Pd2+ dopants occupy interstitial sites of the ZnO lattice and single Ru3+ doping replaces Zn vacancies substitutionally with a significant effect on the CDB momentum ratio curves when compared using ZnO as the reference spectrum. The co-doping of the ZnO lattice with (Sn4+ + Co2+) shows similar CDB ratios as Ru3+ single-doping. Also co-doping with (Ag1+ + Pd2+) or (Ag1+ + W6+) shows significant decreases in the band gap energy up to about 12.6% compared to single doping. The momentum ratio curves, referenced to undoped ZnO, indicate dopants in interstitial and substitutional sites. The presence of transition metal ions interstitially will trap electrons which resist the recombination of electrons and in turn affect the conductivity of the material.

One-step synthesis of highly dispersed gold nanocrystals on silica spheres.

PubMed

Phonthammachai, Nopphawan; White, Timothy J

2007-11-06

Highly dispersed gold nanocrystals decorating silica spheres were prepared from HAuCl4 and NaOH via a deposition-precipitation (DP) process, in which the isoelectric point (IEP) of the substrate was adjusted during sphere synthesis by interaction of the surface with ammonia molecules. Through the systematic variation of pH (4-8), reaction temperature (65-96 degrees C), and time (10-30 min), a superior product with small (2-5 nm), homogeneously distributed gold crystals was obtained at pH 7 and a reaction temperature of 96 degrees C. These materials will offer enhanced performance as catalysts and contrast enhancers in biomedical imaging.

Complete magnesiothermic reduction reaction of vertically aligned mesoporous silica channels to form pure silicon nanoparticles

PubMed Central

Kim, Kyoung Hwan; Lee, Dong Jin; Cho, Kyeong Min; Kim, Seon Joon; Park, Jung-Ki; Jung, Hee-Tae

2015-01-01

Owing to its simplicity and low temperature conditions, magnesiothermic reduction of silica is one of the most powerful methods for producing silicon nanostructures. However, incomplete reduction takes place in this process leaving unconverted silica under the silicon layer. This phenomenon limits the use of this method for the rational design of silicon structures. In this effort, a technique that enables complete magnesiothermic reduction of silica to form silicon has been developed. The procedure involves magnesium promoted reduction of vertically oriented mesoporous silica channels on reduced graphene oxides (rGO) sheets. The mesopores play a significant role in effectively enabling magnesium gas to interact with silica through a large number of reaction sites. Utilizing this approach, highly uniform, ca. 10 nm sized silicon nanoparticles are generated without contamination by unreacted silica. The new method for complete magnesiothermic reduction of mesoporous silica approach provides a foundation for the rational design of silicon structures. PMID:25757800

Realizing up-conversion fluorescence tuning in lanthanide-doped nanocrystals by femtosecond pulse shaping method

PubMed Central

Zhang, Shian; Yao, Yunhua; Shuwu, Xu; Liu, Pei; Ding, Jingxin; Jia, Tianqing; Qiu, Jianrong; Sun, Zhenrong

2015-01-01

The ability to tune color output of nanomaterials is very important for their applications in laser, optoelectronic device, color display and multiplexed biolabeling. Here we first propose a femtosecond pulse shaping technique to realize the up-conversion fluorescence tuning in lanthanide-doped nanocrystals dispersed in the glass. The multiple subpulse formation by a square phase modulation can create different excitation pathways for various up-conversion fluorescence generations. By properly controlling these excitation pathways, the multicolor up-conversion fluorescence can be finely tuned. This color tuning by the femtosecond pulse shaping technique is realized in single material by single-color laser field, which is highly desirable for further applications of the lanthanide-doped nanocrystals. This femtosecond pulse shaping technique opens an opportunity to tune the color output in the lanthanide-doped nanocrystals, which may bring a new revolution in the control of luminescence properties of nanomaterials. PMID:26290391

Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

NASA Astrophysics Data System (ADS)

Yuan, Kang; Sun, Yuxin; Lu, Yunhao; Liang, Xingbo; Tian, Daxi; Ma, Xiangyang; Yang, Deren

2018-04-01

Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young's modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young's modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

Dye-doped silica-based nanoparticles for bioapplications

NASA Astrophysics Data System (ADS)

Nhung Tran, Hong; Nghiem, Thi Ha Lien; Thuy Duong Vu, Thi; Tan Pham, Minh; Van Nguyen, Thi; Trang Tran, Thu; Chu, Viet Ha; Thuan Tong, Kim; Thuy Tran, Thanh; Le, Thi Thanh Xuan; Brochon, Jean-Claude; Quy Nguyen, Thi; Nhung Hoang, My; Nguyen Duong, Cao; Thuy Nguyen, Thi; Hoang, Anh Tuan; Hoa Nguyen, Phuong

2013-12-01

This paper presents our recent research results on synthesis and bioapplications of dye-doped silica-based nanoparticles. The dye-doped water soluble organically modified silicate (ORMOSIL) nanoparticles (NPs) with the size of 15-100 nm were synthesized by modified Stöber method from methyltriethoxysilane CH3Si(OCH3)3 precursor (MTEOS). Because thousands of fluorescent dye molecules are encapsulated in the silica-based matrix, the dye-doped nanoparticles are extremely bright and photostable. Their surfaces were modified with bovine serum albumin (BSA) and biocompatible chemical reagents. The highly intensive luminescent nanoparticles were combined with specific bacterial and breast cancer antigen antibodies. The antibody-conjugated nanoparticles can identify a variety of bacterium, such as Escherichia coli O157:H7, through antibody-antigen interaction and recognition. A highly sensitive breast cancer cell detection has been achieved with the anti-HER2 monoclonal antibody-nanoparticles complex. These results demonstrate the potential to apply these fluorescent nanoparticles in various biodetection systems.

Doping profile measurement on textured silicon surface

NASA Astrophysics Data System (ADS)

Essa, Zahi; Taleb, Nadjib; Sermage, Bernard; Broussillou, Cédric; Bazer-Bachi, Barbara; Quillec, Maurice

2018-04-01

In crystalline silicon solar cells, the front surface is textured in order to lower the reflection of the incident light and increase the efficiency of the cell. This texturing whose dimensions are a few micrometers wide and high, often makes it difficult to determine the doping profile measurement. We have measured by secondary ion mass spectrometry (SIMS) and electrochemical capacitance voltage profiling the doping profile of implanted phosphorus in alkaline textured and in polished monocrystalline silicon wafers. The paper shows that SIMS gives accurate results provided the primary ion impact angle is small enough. Moreover, the comparison between these two techniques gives an estimation of the concentration of electrically inactive phosphorus atoms.

Enhanced Luminescent Stability through Particle Interactions in Silicon Nanocrystal Aggregates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, Joseph B.; Dandu, Naveen; Velizhanin, Kirill A.

2015-10-27

Close-packed assemblies of ligand-passivated colloidal nanocrystals can exhibit enhanced photoluminescent stability, but the origin of this effect is unclear. Here, we use experiment, simulation, and ab initio computation to examine the influence of interparticle interactions on the photoluminescent stability of silicon nanocrystal aggregates. The time-dependent photoluminescence emitted by structures ranging in size from a single quantum dot to agglomerates of more than a thousand is compared with Monte Carlo simulations of noninteracting ensembles using measured single-particle blinking data as input. In contrast to the behavior typically exhibited by the metal chalcogenides, the measured photoluminescent stability shows an enhancement with respectmore » to the noninteracting scenario with increasing aggregate size. We model this behavior using time-dependent density functional theory calculations of energy transfer between neighboring nanocrystals as a function of nanocrystal size, separation, and the presence of charge and/or surface-passivation defects. Our results suggest that rapid exciton transfer from “bright” nanocrystals to surface trap states in nearest-neighbors can efficiently fill such traps and enhance the stability of emission by promoting the radiative recombination of slowly diffusing excited electrons.« less

S-Doped Sb2O3 Nanocrystal: an Efficient Visible-Light Catalyst for Organic Degradation

NASA Astrophysics Data System (ADS)

Xue, Hun; Lin, Xinyi; Chen, Qinghua; Qian, Qingrong; Lin, Suying; Zhang, Xiaoyan; Yang, Da-Peng; Xiao, Liren

2018-04-01

The S-doped Sb2O3 nanocrystals were successfully synthesized using SbCl3 and thioacetamide (TAA) as precursors via a facile one-step hydrothermal method. The effects of pH of the precursor reaction solution on the product composition and property were determined. The results indicated that the doping amount of S could be tuned by adjusting the pH of the precursor solution. Furthermore, the S entered into the interstitial site of Sb2O3 crystals as S2-, which broadened the absorption wavelength range of the Sb2O3 nanocrystal. The S-doped Sb2O3 exhibited an excellent visible-light-driven photocatalytic activity in the decomposition of methyl orange and 4-phenylazophenol. Last, a possible photocatalytic mechanism of the S-doped Sb2O3 under visible light irradiation was proposed.

Optical properties and ensemble characteristics of size purified Silicon nanocrystals

NASA Astrophysics Data System (ADS)

Miller, Joseph Bradley

Nanotechnology is at the forefront of current scientific research and nanocrystals are being hailed as the 'artificial' atoms of the 21st century. Semiconducting silicon nanocrystals (SiNCs) are prime candidates for potential commercial applications because of silicon's already ubiquitous presence in the semiconductor industry, nontoxicity and abundance in nature. For realization of these potential applications, the properties and behavior of SiNCs need to be understood and enhanced. In this report, some of the main SiNC synthesis schemes are discussed, including those we are currently experimenting with to create our own SiNCs and the one utilized to create the SiNCs used in this study. The underlying physics that governs the unique behavior of SiNCs is then presented. The properties of the as-produced SiNCs are determined to depend strongly on surface passivation and environment. Size purification, an important aspect of nanomaterial utilization, was successfully performed on our SiNCs though density gradient ultracentrifugation. We demonstrate that the size-purified fractions exhibit an enhanced ability for colloidal self-assembly, with better aligned nanocrystal energy levels which promotes greater photostability in close-packed films and produces a slight increase in photoluminescence (PL) quantum yield. The qualities displayed by the fractions are exploited to form SiNC clusters that exhibit photostable PL. An analysis of SiNC cluster (from individual nanocrystals to collections of more than one thousand) blinking and PL shows an improvement in their PL emitting 'on' times. Pure SiNC films and SiNC-polymer nanocomposites are created and the dependence of their PL on temperature is measured. For such nanocomposites, the coupling between the 'coffee-ring' effect and liquid-liquid phase separation is also examined for ternary mixtures of solvent, polymer and semiconducting nanocrystal. We discover that with the right SiNC-polymer concentration and polymer

Cerium-doped scintillating fused-silica fibers

NASA Astrophysics Data System (ADS)

Akchurin, N.; Cowden, C.; Damgov, J.; Dragoiu, C.; Dudero, P.; Faulkner, J.; Kunori, S.

2018-04-01

We report on a set of measurements made on (scintillating) cerium-doped fused-silica fibers using high-energy particle beams. These fibers were uniformly embedded in a copper absorber in order to utilize electromagnetic showers as a source of charged particles for generating signals. This new type of cerium-doped fiber potentially offers myriad new applications in calorimeters in high-energy physics, tracking systems, and beam monitoring detectors for future applications. The light yield, pulse shape, attenuation length, and light propagation speeds are given and discussed. Possible future applications are also explored.

Soluble Supercapacitors: Large and Reversible Charge Storage in Colloidal Iron-Doped ZnO Nanocrystals.

PubMed

Brozek, Carl K; Zhou, Dongming; Liu, Hongbin; Li, Xiaosong; Kittilstved, Kevin R; Gamelin, Daniel R

2018-05-09

Colloidal ZnO semiconductor nanocrystals have previously been shown to accumulate multiple delocalized conduction-band electrons under chemical, electrochemical, or photochemical reducing conditions, leading to emergent semimetallic characteristics such as quantum plasmon resonances and raising prospects for application in multielectron redox transformations. Here, we demonstrate a dramatic enhancement in the capacitance of colloidal ZnO nanocrystals through aliovalent Fe 3+ -doping. Very high areal and volumetric capacitances (33 μF cm -2 , 233 F cm -3 ) are achieved in Zn 0.99 Fe 0.01 O nanocrystals that rival those of the best supercapacitors used in commercial energy-storage devices. The redox properties of these nanocrystals are probed by potentiometric titration and optical spectroscopy. These data indicate an equilibrium between electron localization by Fe 3+ dopants and electron delocalization within the ZnO conduction band, allowing facile reversible charge storage and removal. As "soluble supercapacitors", colloidal iron-doped ZnO nanocrystals constitute a promising class of solution-processable electronic materials with large charge-storage capacity attractive for future energy-storage applications.

Fabrication of amorphous silica nanowires via oxygen plasma treatment of polymers on silicon

NASA Astrophysics Data System (ADS)

Chen, Zhuojie; She, Didi; Chen, Qinghua; Li, Yanmei; Wu, Wengang

2018-02-01

We demonstrate a facile non-catalytic method of fabricating silica nanowires at room temperature. Different polymers including photoresists, parylene C and polystyrene are patterned into pedestals on the silicon substrates. The silica nanowires are obtained via the oxygen plasma treatment on those pedestals. Compared to traditional strategies of silica nanowire fabrication, this method is much simpler and low-cost. Through designing the proper initial patterns and plasma process parameters, the method can be used to fabricate various regiment nano-scale silica structure arrays in any laboratory with a regular oxygen-plasma-based cleaner or reactive-ion-etching equipment.

Vapor Pressure and Evaporation Coefficient of Silicon Monoxide over a Mixture of Silicon and Silica

NASA Technical Reports Server (NTRS)

Ferguson, Frank T.; Nuth, Joseph A., III

2012-01-01

The evaporation coefficient and equilibrium vapor pressure of silicon monoxide over a mixture of silicon and vitreous silica have been studied over the temperature range (1433 to 1608) K. The evaporation coefficient for this temperature range was (0.007 plus or minus 0.002) and is approximately an order of magnitude lower than the evaporation coefficient over amorphous silicon monoxide powder and in general agreement with previous measurements of this quantity. The enthalpy of reaction at 298.15 K for this reaction was calculated via second and third law analyses as (355 plus or minus 25) kJ per mol and (363.6 plus or minus 4.1) kJ per mol respectively. In comparison with previous work with the evaporation of amorphous silicon monoxide powder as well as other experimental measurements of the vapor pressure of silicon monoxide gas over mixtures of silicon and silica, these systems all tend to give similar equilibrium vapor pressures when the evaporation coefficient is correctly taken into account. This provides further evidence that amorphous silicon monoxide is an intimate mixture of small domains of silicon and silica and not strictly a true compound.

Metal-insulator transition properties of sputtered silicon-doped and un-doped vanadium dioxide films at terahertz range

NASA Astrophysics Data System (ADS)

Zhang, Huafu; Wu, Zhiming; Niu, Ruihua; Wu, Xuefei; he, Qiong; Jiang, Yadong

2015-03-01

Silicon-doped and un-doped vanadium dioxide (VO2) films were synthesized on high-purity single-crystal silicon substrates by means of reactive direct current magnetron sputtering followed by thermal annealing. The structure, morphology and metal-insulator transition properties of silicon-doped VO2 films at terahertz range were measured and compared to those of un-doped VO2 films. X-ray diffraction and scanning electron microscopy indicated that doping the films with silicon significantly affects the preferred crystallographic orientation and surface morphologies (grain size, pores and characteristics of grain boundaries). The temperature dependence of terahertz transmission shows that the transition temperature, hysteresis width and transition sharpness greatly depend on the silicon contents while the transition amplitude was relatively insensitive to the silicon contents. Interestingly, the VO2 film doped with a silicon content of 4.6 at.% shows excellent terahertz switching characteristics, namely a small hysteresis width of 4.5 °C, a giant transmission modulation ratio of about 82% and a relatively low transition temperature of 56.1 °C upon heating. This work experimentally indicates that silicon doping can effectively control not only the surface morphology but also the metal-insulator transition characteristics of VO2 films at terahertz range.

Tunable infrared absorption and visible transparency of colloidal aluminum-doped zinc oxide nanocrystals.

PubMed

Buonsanti, Raffaella; Llordes, Anna; Aloni, Shaul; Helms, Brett A; Milliron, Delia J

2011-11-09

Plasmonic nanocrystals have been attracting a lot of attention both for fundamental studies and different applications, from sensing to imaging and optoelectronic devices. Transparent conductive oxides represent an interesting class of plasmonic materials in addition to metals and vacancy-doped semiconductor quantum dots. Herein, we report a rational synthetic strategy of high-quality colloidal aluminum-doped zinc oxide nanocrystals. The presence of substitutional aluminum in the zinc oxide lattice accompanied by the generation of free electrons is proved for the first time by tunable surface plasmon absorption in the infrared region both in solution and in thin films.

Plasmonic properties and enhanced fluorescence of gold and dye-doped silica nanoparticle aggregates

NASA Astrophysics Data System (ADS)

Green, Nathaniel Scott

The development of metal-enhanced fluorescence has prompted a great interest in augmenting the photophysical properties of fluorescent molecules with noble metal nanostructures. Our research efforts, outlined in this dissertation, focus on augmenting properties of fluorophores by conjugation with gold nanostructures. The project goals are split into two separate efforts; the enhancement in brightness of fluorophores and long distance non-radiative energy transfer between fluorophores. We believe that interacting dye-doped silica nanoparticles with gold nanoparticles can facilitate both of these phenomena. Our primary research interest is focused on optimizing brightness, as this goal should open a path to studying the second goal of non-radiative energy transfer. The two major challenges to this are constructing suitable nanomaterials and functionalizing them to promote plasmonically active complexes. The synthesis of dye-doped layered silica nanoparticles allows for control over the discrete location of the dye and a substrate that can be surface functionalized. Controlling the exact location of the dye is important to create a silica spacer, which promotes productive interactions with metal nanostructures. Furthermore, the synthesis of silica nanoparticles allows for various fluorophores to be studied in similar environments (removing solvent and other chemo-sensitive issues). Functionalizing the surface of silica nanoparticles allows control over the degree of silica and gold nanoparticle aggregation in solution. Heteroaggregation in solution is useful for producing well-aggregated clusters of many gold around a single silica nanoparticle. The dye-doped surface functionalized silica nanoparticles can than be mixed efficiently with gold nanomaterials. Aggregating multiple gold nanospheres around a single dye-doped silica nanoparticle can dramatically increase the fluorescent brightness of the sample via metal-enhanced fluorescence due to increase plasmonic

Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krivyakin, G. K.; Volodin, V. A., E-mail: volodin@isp.nsc.ru; Kochubei, S. A.

Silicon nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 (below the melting threshold) to 250 mJ/cm{sup 2} (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser-annealing parameters. Current–voltage measurements show that the fabricated p–i–n structures possess diode characteristics. An electroluminescence signal in the infrared (IR)more » range is detected for the p–i–n structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous-matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates.« less

Near-infrared luminescent cubic silicon carbide nanocrystals for in vivo biomarker applications: an ab initio study

NASA Astrophysics Data System (ADS)

Somogyi, Bálint; Zólyomi, Viktor; Gali, Adam

2012-11-01

Molecule-sized fluorescent emitters are much sought-after to probe biomolecules in living cells. We demonstrate here by time-dependent density functional calculations that the experimentally achievable 1-2 nm sized silicon carbide nanocrystals can emit light in the near-infrared region after introducing appropriate color centers in them. These near-infrared luminescent silicon carbide nanocrystals may act as ideal fluorophores for in vivo bioimaging.

Improved Li storage performance in SnO 2 nanocrystals by a synergetic doping

DOE PAGES

Wan, Ning; Lu, Xia; Wang, Yuesheng; ...

2016-01-06

Tin dioxide (SnO 2) is a widely investigated lithium (Li) storage material because of its easy preparation, two-step storage mechanism and high specific capacity for lithium-ion batteries (LIBs). In this contribution, a phase-pure cobalt-doped SnO 2 (Co/SnO 2) and a cobalt and nitrogen co-doped SnO 2 (Co-N/SnO 2) nanocrystals are prepared to explore their Li storage behaviors. It is found that the morphology, specific surface area, and electrochemical properties could be largely modulated in the doped and co-doped SnO 2 nanocrystals. Gavalnostatic cycling results indicate that the Co-N/SnO 2 electrode delivers a specific capacity as high as 716 mAh gmore » –1 after 50 cycles, and the same outstanding rate performance can be observed in subsequent cycles due to the ionic/electronic conductivity enhancement by co-doping effect. Further, microstructure observation indicates the existence of intermediate phase of Li 3N with high ionic conductivity upon cycling, which probably accounts for the improvements of Co-N/SnO 2 electrodes. Furthermore, we find that the method of synergetic doping into SnO 2 with Co and N, with which the electrochemical performances is enhanced remarkably, undoubtedly, will have an important influence on the material itself and community of LIBs as well.« less

Highly aqueous soluble CaF2:Ce/Tb nanocrystals: effect of surface functionalization on structural, optical band gap, and photoluminescence properties.

PubMed

Ansari, Anees A; Parchur, Abdul K; Kumar, Brijesh; Rai, S B

2016-12-01

The design of nanostructured materials with highly stable water-dispersion and luminescence efficiency is an important concern in nanotechnology and nanomedicine. In this paper, we described the synthesis and distinct surface modification on the morphological structure and optical (optical absorption, band gap energy, excitation, emission, decay time, etc.) properties of highly crystalline water-dispersible CaF 2 :Ce/Tb nanocrystals (core-nanocrystals). The epitaxial growth of inert CaF 2 and silica shell, respectively, on their surface forming as CaF 2 :Ce/Tb@CaF 2 (core/shell) and CaF 2 :Ce/Tb@CaF 2 @SiO 2 (core/shell/SiO 2 ) nanoarchitecture. X-ray diffraction and transmission electron microscope image shows that the nanocrystals were in irregular spherical phase, highly crystalline (~20 nm) with narrow size distribution. The core/shell nanocrystals confirm that the surface coating is responsible in the change of symmetrical nanostructure, which was determined from the band gap energy and luminescent properties. It was found that an inert inorganic shell formation effectively enhances the luminescence efficiency and silica shell makes the nanocrystals highly water-dispersible. In addition, Ce 3+ /Tb 3+ -co-doped CaF 2 nanocrystals show efficient energy transfer from Ce 3+ to Tb 3+ ion and strong green luminescence of Tb 3+ ion at 541 nm( 5 D 4 → 7 F 5 ). Luminescence decay curves of core and core/shell nanocrystals were fitted using mono and biexponential equations, and R 2 regression coefficient criteria were used to discriminate the goodness of the fitted model. The lifetime values for the core/shell nanocrystals are higher than core-nanocrystals. Considering the high stable water-dispersion and intensive luminescence emission in the visible region, these luminescent core/shell nanocrystals could be potential candidates for luminescent bio-imaging, optical bio-probe, displays, staining, and multianalyte optical sensing. A newly designed CaF 2 :Ce

Radiation hardening in sol-gel derived Er{sup 3+}-doped silica glasses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hari Babu, B., E-mail: hariphy2012@gmail.com, E-mail: matthieu.lancry@u-psud.fr; León Pichel, Mónica; Institut de Chimie Moléculaire et des Matériaux d'Orsay, UMR CNRS-UPSud 8182, Université Paris Sud, 91405 Orsay

2015-09-28

The aim of the present paper is to report the effect of radiation on the Er{sup 3+}-doped sol-gel silica glasses. A possible application of these sol-gel glasses could be their use in harsh radiation environments. The sol-gel glasses are fabricated by densification of erbium salt-soaked nanoporous silica xerogels through polymeric sol-gel technique. The radiation-induced attenuation of Er{sup 3+}-doped sol-gel silica is found to increase with erbium content. Electron paramagnetic resonance studies reveal the presence of E′{sub δ} point defects. This happens in the sol-gel aluminum-silica glass after an exposure to γ-rays (kGy) and in sol-gel silica glass after an exposuremore » to electrons (MGy). The concentration levels of these point defects are much lower in γ-ray irradiated sol-gel silica glasses. When the samples are co-doped with Al, the exposure to γ-ray radiation causes a possible reduction of the erbium valence from Er{sup 3+} to Er{sup 2+} ions. This process occurs in association with the formation of aluminum oxygen hole centers and different intrinsic point defects.« less

High-energy electron-induced damage production at room temperature in aluminum-doped silicon

NASA Technical Reports Server (NTRS)

Corbett, J. W.; Cheng, L. J.; Jaworowski, A.; Karins, J. P.; Lee, Y. H.; Lindstroem, L.; Mooney, P. M.; Oehrlen, G.; Wang, K. L.

1979-01-01

DLTS and EPR measurements are reported on aluminum-doped silicon that was irradiated at room temperature with high-energy electrons. Comparisons are made to comparable experiments on boron-doped silicon. Many of the same defects observed in boron-doped silicon are also observed in aluminum-doped silicon, but several others were not observed, including the aluminum interstitial and aluminum-associated defects. Damage production modeling, including the dependence on aluminum concentration, is presented.

Negligible Electronic Interaction between Photoexcited Electron–Hole Pairs and Free Electrons in Phosphorus–Boron Co-Doped Silicon Nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Limpens, Rens; Fujii, Minoru; Neale, Nathan R.

Phosphorus (P) and boron (B) co-doped Si nanocrystals (NCs) have raised interest in the optoelectronic industry due to their electronic tunability, optimal carrier multiplication properties, and straightforward dispersibility in polar solvents. Yet a basic understanding of the interaction of photoexcited electron-hole (e-h) pairs with new physical features that are introduced by the co-doping process (free carriers, defect states, and surface chemistry) is missing. Here, we present the first study of the ultrafast carrier dynamics in SiO2-embedded P-B co-doped Si NC ensembles using induced absorption spectroscopy through a two-step approach. First, the induced absorption data show that the large fraction ofmore » the dopants residing on the NC surface slows down carrier relaxation dynamics within the first 20 ps relative to intrinsic (undoped) Si NCs, which we interpret as enhanced surface passivation. On longer time-scales (picosecond to nanosecond regime), we observe a speeding up of the carrier relaxation dynamics and ascribe it to doping-induced trap states. This argument is deduced from the second part of the study, where we investigate multiexciton interactions. From a stochastic modeling approach we show that localized carriers, which are introduced by the P or B dopants, have minor electronic interactions with the photoexcited e-h pairs. This is understood in light of the strong localization of the introduced carriers on their original P- or B-dopant atoms, due to the strong quantum confinement regime in these relatively small NCs (<6 nm).« less

Negligible Electronic Interaction between Photoexcited Electron-Hole Pairs and Free Electrons in Phosphorus-Boron Co-Doped Silicon Nanocrystals

DOE PAGES

Limpens, Rens; Neale, Nathan R; Fujii, Minoru; ...

2018-03-05

Phosphorus (P) and boron (B) co-doped Si nanocrystals (NCs) have raised interest in the optoelectronic industry due to their electronic tunability, optimal carrier multiplication properties, and straightforward dispersibility in polar solvents. Yet a basic understanding of the interaction of photoexcited electron-hole (e-h) pairs with new physical features that are introduced by the co-doping process (free carriers, defect states, and surface chemistry) is missing. Here, we present the first study of the ultrafast carrier dynamics in SiO2-embedded P-B co-doped Si NC ensembles using induced absorption spectroscopy through a two-step approach. First, the induced absorption data show that the large fraction ofmore » the dopants residing on the NC surface slows down carrier relaxation dynamics within the first 20 ps relative to intrinsic (undoped) Si NCs, which we interpret as enhanced surface passivation. On longer time-scales (picosecond to nanosecond regime), we observe a speeding up of the carrier relaxation dynamics and ascribe it to doping-induced trap states. This argument is deduced from the second part of the study, where we investigate multiexciton interactions. From a stochastic modeling approach we show that localized carriers, which are introduced by the P or B dopants, have minor electronic interactions with the photoexcited e-h pairs. This is understood in light of the strong localization of the introduced carriers on their original P- or B-dopant atoms, due to the strong quantum confinement regime in these relatively small NCs (<6 nm).« less

Negligible Electronic Interaction between Photoexcited Electron–Hole Pairs and Free Electrons in Phosphorus–Boron Co-Doped Silicon Nanocrystals

DOE PAGES

Limpens, Rens; Fujii, Minoru; Neale, Nathan R.; ...

2018-02-28

Phosphorus (P) and boron (B) co-doped Si nanocrystals (NCs) have raised interest in the optoelectronic industry due to their electronic tunability, optimal carrier multiplication properties, and straightforward dispersibility in polar solvents. Yet a basic understanding of the interaction of photoexcited electron-hole (e-h) pairs with new physical features that are introduced by the co-doping process (free carriers, defect states, and surface chemistry) is missing. Here, we present the first study of the ultrafast carrier dynamics in SiO2-embedded P-B co-doped Si NC ensembles using induced absorption spectroscopy through a two-step approach. First, the induced absorption data show that the large fraction ofmore » the dopants residing on the NC surface slows down carrier relaxation dynamics within the first 20 ps relative to intrinsic (undoped) Si NCs, which we interpret as enhanced surface passivation. On longer time-scales (picosecond to nanosecond regime), we observe a speeding up of the carrier relaxation dynamics and ascribe it to doping-induced trap states. This argument is deduced from the second part of the study, where we investigate multiexciton interactions. From a stochastic modeling approach we show that localized carriers, which are introduced by the P or B dopants, have minor electronic interactions with the photoexcited e-h pairs. This is understood in light of the strong localization of the introduced carriers on their original P- or B-dopant atoms, due to the strong quantum confinement regime in these relatively small NCs (<6 nm).« less

Metal-enhanced fluorescence of dye-doped silica nano particles.

PubMed

Gunawardana, Kalani B; Green, Nathaniel S; Bumm, Lloyd A; Halterman, Ronald L

2015-03-01

Recent advancements in metal-enhanced fluorescence (MEF) suggest that it can be a promising tool for detecting molecules at very low concentrations when a fluorophore is fixed near the surface of metal nanoparticles. We report a simple method for aggregating multiple gold nanoparticles (GNPs) on Rhodamine B (RhB)-doped silica nanoparticles (SiNPs) utilizing dithiocarbamate (DTC) chemistry to produce MEF in solution. Dye was covalently incorporated into the growing silica framework via co-condensation of a 3-aminopropyltriethoxysilane (APTES) coupled RhB precursor using the Stöber method. Electron microscopy imaging revealed that these mainly non-spherical particles were relatively large (80 nm on average) and not well defined. Spherical core-shell particles were prepared by physisorbing a layer of RhB around a small spherical silica particle (13 nm) before condensing an outer layer of silica onto the surface. The core-shell method produced nanospheres (~30 nm) that were well defined and monodispersed. Both dye-doped SiNPs were functionalized with pendant amines that readily reacted with carbon disulfide (CS2) under basic conditions to produce DTC ligands that have exhibited a high affinity for gold surfaces. GNPs were produced via citrate reduction method and the resulting 13 nm gold nanospheres were then recoated with an ether-terminated alkanethiol to provide stability in ethanol. Fluorescent enhancement was observed when excess GNPs were added to DTC coated dye-doped SiNPs to form nanoparticle aggregates. Optimization of this system gave a fluorescence brightness enhancement of over 200 fold. Samples that gave fluorescence enhancement were characterized through Transmission Emission Micrograph (TEM) to reveal a pattern of multiple aggregation of GNPs on the dye-doped SiNPs.

Preparation of Ultraviolet Curing Type Silicone Rubbers Containing Mesoporous Silica Fillers.

PubMed

Abdullah, Nawfel; Hossain, Md Shahriar A; Fatehmulla, Amanullah; Farooq, Wazirzada Aslam; Islam, Md Tofazzal; Miyamoto, Nobuyoshi; Bando, Yoshio; Kamachi, Yuichiro; Malgras, Victor; Yamauchi, Yusuke; Suzuki, Norihiro

2018-01-01

Here we have been focusing on mesoporous silica (MPS) as inorganic filler material to improve the mechanical strength of silicone rubbers. The MPS particles are more effective in reducing the coefficient of thermal expansion (CTE) and hardening silicone rubber composites when compared to commercially available nonporous silica particles. In this study, we utilize ultraviolet curing type silicone rubbers and prepare MPS composites according to a simple single-step method. From an industrial viewpoint, simplifying the fabrication processes is critical. The thermal stability and mechanical strength are examined in detail in order to showcase the effectiveness of MPS particles as filler materials.

Effect of silicon, tantalum, and tungsten doping and polarization on bioactivity of hydroxyapatite

NASA Astrophysics Data System (ADS)

Dhal, Jharana

Hydroxyapatite (HAp) ceramics has important applications as bone graft because of the structural and compositional similarities with bone tissue. However, inferior osteogenic capacity to bone and poor mechanical properties have been identified to be major disadvantages of synthetic HAp compared to the living bone tissue. The objective of the current study is to evaluate the effect of doping with higher valent cations (Tungsten, tantalum, and silicon) and polarization or combination of both on change in property of doped HAp and subsequent impact its bioactivity. In vitro study with human osteoblast cells was used to investigate the influences of doping and polarization on bone cell-materials interactions. The bioactivity of doped HAp was compared with pure HAp. Effect of doping and polarization on the change in HAp was investigated by monitoring change in mineral phases, stored charge, and activation energy of HAp. Activation energy of depolarization was used to explain the possible mechanism of polarization in doped samples. Bioactivity of HAp increased when doped with tantalum and tungsten. Polarization further increased the bioactivity of tungsten- and tantalum-doped samples. Increase in bioactivity on polarized and doped samples was attributed to increase in surface energy and increase in surface wettability. Whereas, an increase in bioactivity on doped unpolarized surface was attributed to change in microstructure. Polarized charge calculated from TSDC indicates that polarized charge decreases on tantalum- and tungsten-doped HAp. The decrease in polarized charge was attributed to the presence of significant amount of different phases that may hinder the ionic motion in doped samples. However, for silicon-doped HAp, TSDC study showed no difference in the mechanism of polarization between doped and undoped samples. Increase in silicon doping decreased the grain size though mechanism is not affected by grain size. Total stored charge decreased with increase in

Superlattice doped layers for amorphous silicon photovoltaic cells

DOEpatents

Arya, Rajeewa R.

1988-01-12

Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

A facile green antisolvent approach to Cu2+-doped ZnO nanocrystals with visible-light-responsive photoactivities.

PubMed

Lu, Yi-Hsuan; Lin, Wei-Hao; Yang, Chao-Yao; Chiu, Yi-Hsuan; Pu, Ying-Chih; Lee, Min-Han; Tseng, Yuan-Chieh; Hsu, Yung-Jung

2014-08-07

An environmentally benign antisolvent method has been developed to prepare Cu(2+)-doped ZnO nanocrystals with controllable dopant concentrations. A room temperature ionic liquid, known as a deep eutectic solvent (DES), was used as the solvent to dissolve ZnO powders. Upon the introduction of the ZnO-containing DES into a bad solvent which shows no solvation to ZnO, ZnO was precipitated and grown due to the dramatic decrease of solubility. By adding Cu(2+) ions to the bad solvent, the growth of ZnO from the antisolvent process was accompanied by Cu(2+) introduction, resulting in the formation of Cu(2+)-doped ZnO nanocrystals. The as-prepared Cu(2+)-doped ZnO showed an additional absorption band in the visible range (400-800 nm), which conduced to an improvement in the overall photon harvesting efficiency. Time-resolved photoluminescence spectra, together with the photovoltage information, suggested that the doped Cu(2+) may otherwise trap photoexcited electrons during the charge transfer process, inevitably depressing the photoconversion efficiency. The photoactivity of Cu(2+)-doped ZnO nanocrystals for photoelectrochemical water oxidation was effectively enhanced in the visible region, which achieved the highest at 2.0 at% of Cu(2+). A further increase in the Cu(2+) concentration however led to a decrease in the photocatalytic performance, which was ascribed to the significant carrier trapping caused by the increased states given by excessive Cu(2+). The photocurrent action spectra illustrated that the enhanced photoactivity of the Cu(2+)-doped ZnO nanocrystals was mainly due to the improved visible photon harvesting achieved by Cu(2+) doping. These results may facilitate the use of transition metal ion-doped ZnO in other photoconversion applications, such as ZnO based dye-sensitized solar cells and magnetism-assisted photocatalytic systems.

Antimicrobial activity of silica coated silicon nano-tubes (SCSNT) and silica coated silicon nano-particles (SCSNP) synthesized by gas phase condensation.

PubMed

Tank, Chiti; Raman, Sujatha; Karan, Sujoy; Gosavi, Suresh; Lalla, Niranjan P; Sathe, Vasant; Berndt, Richard; Gade, W N; Bhoraskar, S V; Mathe, Vikas L

2013-06-01

Silica-coated, silicon nanotubes (SCSNTs) and silica-coated, silicon nanoparticles (SCSNPs) have been synthesized by catalyst-free single-step gas phase condensation using the arc plasma process. Transmission electron microscopy and scanning tunneling microscopy showed that SCSNTs exhibited a wall thickness of less than 1 nm, with an average diameter of 14 nm and a length of several 100 nm. Both nano-structures had a high specific surface area. The present study has demonstrated cheaper, resistance-free and effective antibacterial activity in silica-coated silicon nano-structures, each for two Gram-positive and Gram-negative bacteria. The minimum inhibitory concentration (MIC) was estimated, using the optical densitometric technique, and by determining colony-forming units. The MIC was found to range in the order of micrograms, which is comparable to the reported MIC of metal oxides for these bacteria. SCSNTs were found to be more effective in limiting the growth of multidrug-resistant Staphylococcus aureus over SCSNPs at 10 μg/ml (IC 50 = 100 μg/ml).

Noncontact Measurement of Doping Profile for Bare Silicon

NASA Astrophysics Data System (ADS)

Kohno, Motohiro; Matsubara, Hideaki; Okada, Hiroshi; Hirae, Sadao; Sakai, Takamasa

1998-10-01

In this study, we evaluate the doping concentrations of bare silicon wafers by noncontact capacitance voltage (C V) measurements. The metal-air-insulator-semiconductor (MAIS) method enables the measurement of C V characteristics of silicon wafers without oxidation and electrode preparation. This method has the advantage that a doping profile close to the wafer surface can be obtained. In our experiment, epitaxial silicon wafers were used to compare the MAIS method with the conventional MIS method. The experimental results obtained from the two methods showed good agreement. Then, doping profiles of boron-doped Czochralski (CZ) wafers were measured by the MAIS method. The result indicated a significant reduction of the doping concentration near the wafer surface. This observation is attributed to the well-known deactivation of boron with atomic hydrogen which permeated the silicon bulk during the polishing process. This deactivation was recovered by annealing in air at 180°C for 120 min.

Fabrication of Si heterojunction solar cells using P-doped Si nanocrystals embedded in SiNx films as emitters

PubMed Central

2013-01-01

Si heterojunction solar cells were fabricated on p-type single-crystal Si (sc-Si) substrates using phosphorus-doped Si nanocrystals (Si-NCs) embedded in SiNx (Si-NCs/SiNx) films as emitters. The Si-NCs were formed by post-annealing of silicon-rich silicon nitride films deposited by electron cyclotron resonance chemical vapor deposition. We investigate the influence of the N/Si ratio in the Si-NCs/SiNx films on their electrical and optical properties, as well as the photovoltaic properties of the fabricated heterojunction devices. Increasing the nitrogen content enhances the optical gap E04 while deteriorating the electrical conductivity of the Si-NCs/SiNx film, leading to an increased short-circuit current density and a decreased fill factor of the heterojunction device. These trends could be interpreted by a bi-phase model which describes the Si-NCs/SiNx film as a mixture of a high-transparency SiNx phase and a low-resistivity Si-NC phase. A preliminary efficiency of 8.6% is achieved for the Si-NCs/sc-Si heterojunction solar cell. PMID:24188725

Zinc-doping enhanced cadmium sulfide electrochemiluminescence behavior based on Au-Cu alloy nanocrystals quenching for insulin detection.

PubMed

Zhu, Wenjuan; Wang, Chao; Li, Xiaojian; Khan, Malik Saddam; Sun, Xu; Ma, Hongmin; Fan, Dawei; Wei, Qin

2017-11-15

Novel and sensitive sandwich-type electrochemiluminescence (ECL) immunosensor was fabricated for insulin detection. Au-ZnCd 14 S combined nitrogen doping mesoporous carbons (Au-ZnCd 14 S/NH 2 -NMCs) acted as sensing platform and Au-Cu alloy nanocrystals were employed as labels to quench the ECL of Au-ZnCd 14 S/NH 2 -NMCs. Zinc-doping promoted the ECL behavior of CdS nanocrystals, with the best ECL emission obtained when the molar ratio of Zn/Cd was 1:14. Simultaneously, the modification of gold nanoparticles (Au NPs) and combination with NH 2 -NMC further enhanced the ECL emission of ZnCd 14 S due to its excellent conductivity and large specific surface area, which is desirable for the immunosensor construction. Au-Cu alloy nanocrystals were employed in the ECL system of ZnCd 14 S/K 2 S 2 O 8 triggering ECL quenching effects. The ECL spectra of ZnCd 14 S, acting as the energy donor, exhibited well overlaps with the absorption band of Au-Cu alloy nanocrystals which acted as the energy acceptor, leading to an effective ECL resonance energy transfer (ECL-RET). On the basis of the ECL quenching effects, a sensitive ECL immunosensor for insulin detection was successfully constructed with a linear response range of insulin concentration from 0.1pg/mL to 30ng/mL and the limit of detection was calculated to be 0.03pg/mL (S/N = 3). Copyright © 2017 Elsevier B.V. All rights reserved.

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

DOEpatents

Corman, Gregory Scot; Luthra, Krishan Lal

2002-01-01

A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

DOEpatents

Corman, Gregory Scot; Luthra, Krishan Lal

1999-01-01

A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Bright long-lived luminescence of silicon nanocrystals sensitized by two-photon absorbing antenna

PubMed Central

Ravotto, Luca; Chen, Qi; Ma, Yuguo; Vinogradov, Sergei A.; Locritani, Mirko; Bergamini, Giacomo; Negri, Fabrizia; Yu, Yixuan; Korgel, Brian A.; Ceroni, Paola

2017-01-01

Summary Silicon nanocrystals of the average diameter of 5 nm, functionalized with 4,7-di(2-thienyl)-2,1,3-benzothiadiazole chromophores (TBT) and dodecyl chains, exhibit near-infrared emission upon one-photon (1P) excitation at 515 nm and two-photon (2P) excitation at 960 nm. By using TBT chromophores as an antenna we were able to enhance both 1P and 2P absorption cross-sections of the silicon nanocrystals to more efficiently excite their long-lived luminescence. These results chart a path to two-photon-excitable imaging probes with long-lived oxygen-independent luminescence - a rare combination of properties that should allow for a substantial increase in imaging contrast. PMID:28966989

Size Control of Porous Silicon-Based Nanoparticles via Pore-Wall Thinning.

PubMed

Secret, Emilie; Leonard, Camille; Kelly, Stefan J; Uhl, Amanda; Cozzan, Clayton; Andrew, Jennifer S

2016-02-02

Photoluminescent silicon nanocrystals are very attractive for biomedical and electronic applications. Here a new process is presented to synthesize photoluminescent silicon nanocrystals with diameters smaller than 6 nm from a porous silicon template. These nanoparticles are formed using a pore-wall thinning approach, where the as-etched porous silicon layer is partially oxidized to silica, which is dissolved by a hydrofluoric acid solution, decreasing the pore-wall thickness. This decrease in pore-wall thickness leads to a corresponding decrease in the size of the nanocrystals that make up the pore walls, resulting in the formation of smaller nanoparticles during sonication of the porous silicon. Particle diameters were measured using dynamic light scattering, and these values were compared with the nanocrystallite size within the pore wall as determined from X-ray diffraction. Additionally, an increase in the quantum confinement effect is observed for these particles through an increase in the photoluminescence intensity of the nanoparticles compared with the as-etched nanoparticles, without the need for a further activation step by oxidation after synthesis.

Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

NASA Astrophysics Data System (ADS)

Li, Xiaoli; Ding, Kai; Liu, Jian; Gao, Junxuan; Zhang, Weifeng

2018-01-01

Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.

Room temperature enhanced red emission from novel Eu(3+) doped ZnO nanocrystals uniformly dispersed in nanofibers.

PubMed

Zhang, Yongzhe; Liu, Yanxia; Li, Xiaodong; Wang, Qi Jie; Xie, Erqing

2011-10-14

Achieving red emission from ZnO-based materials has long been a goal for researchers in order to realize, for instance, full-color display panels and solid-state light-emitting devices. However, the current technique using Eu(3+) doped ZnO for red emission generation has a significant drawback in that the energy transfer from ZnO to Eu(3+) is inefficient, resulting in a low intensity red emission. In this paper, we report an efficient energy transfer scheme for enhanced red emission from Eu(3+) doped ZnO nanocrystals by fabricating polymer nanofibers embedded with Eu(3+) doped ZnO nanocrystals to facilitate the energy transfer. In the fabrication, ZnO nanocrystals are uniformly dispersed in polymer nanofibers prepared by the high electrical field electrospinning technique. Enhanced red emission without defect radiation from the ZnO matrix is observed. Three physical mechanisms for this observation are provided and explained, namely a small ZnO crystal size, uniformity distribution of ZnO nanocrystals in polymers (PVA in this case), and strong bonding between ZnO and polymer through the -OH group bonding. These explanations are supported by high resolution transmission emission microscopy measurements, resonant Raman scattering characterizations, photoluminescence spectra and photoluminescence excitation spectra measurements. In addition, two models exploring the 'accumulation layer' and 'depletion layer' are developed to explain the reasons for the more efficient energy transfer in our ZnO nanocrystal system compared to that in the previous reports. This study provides an important approach to achieve enhanced energy transfer from nanocrystals to ions which could be widely adopted in rare earth ion doped materials. These discoveries also provide more insights into other energy transfer problems in, for example, dye-sensitized solar cells and quantum dot solar cells.

Deposition of zeolite nanoparticles onto porous silica monolith

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gackowski, Mariusz; Bielanska, Elzbieta; Szczepanowicz, Krzysztof

2016-06-01

A facile and effective method of deposition of MFl zeolite nanoparticles (nanocrystals) onto macro-/mesoporous silica monolith was proposed. The electrostatic interaction between those two materials was induces by adsorption of cationic polyelectrolytes. That can be realized either by adsorption of polyelectrolyte onto silica monolith or on zeolite nanocrystals. The effect of time, concentration of zeolite nanocrystals, type of polyelectrolyte, and ultrasound treatment is scrutinized. Adsorption of polyelectrolyte onto silica monolith with subsequent deposition of nanocrystals resulted in a monolayer coverage assessed with SEM images. Infrared spectroscopy was applied as a useful method to determine the deposition effectiveness of zeolite nanocrystalsmore » onto silica. Modification of nanocrystals with polyelectrolyte resulted in a multilayer coverage due to agglomeration of particles. On the other hand, the excess of polyelectrolyte in the system resulted in a low coverage due to competition between polyelectrolyte and modified nanocrystals.« less

N-Type delta Doping of High-Purity Silicon Imaging Arrays

NASA Technical Reports Server (NTRS)

Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

2005-01-01

metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

Optimizing non-radiative energy transfer in hybrid colloidal-nanocrystal/silicon structures by controlled nanopillar architectures for future photovoltaic cells

NASA Astrophysics Data System (ADS)

Seitz, O.; Caillard, L.; Nguyen, H. M.; Chiles, C.; Chabal, Y. J.; Malko, A. V.

2012-01-01

To optimize colloidal nanocrystals/Si hybrid structures, nanopillars are prepared and organized via microparticle patterning and Si etching. A monolayer of CdSe nanocrystals is then grafted on the passivated oxide-free nanopillar surfaces, functionalized with carboxy-alkyl chain linkers. This process results to a negligible number of non-radiative surface state defects with a tightly controlled separation between the nanocrystals and Si. Steady-state and time-resolved photoluminescence measurements confirm the close-packing nanocrystal arrangement and the dominance of non-radiative energy transfer from nanocrystals to Si. We suggest that radially doped p-n junction devices based on energy transfer offer a viable approach for thin film photovoltaic devices.

Synthesis and characterization of rare-earth-doped calcium tungstate nanocrystals

NASA Astrophysics Data System (ADS)

Suneeta, P.; Rajesh, Ch.; Ramana, M. V.

2018-02-01

In this paper, we report synthesis and characterization of rare-earth-ion-doped calcium tungstate (CaWO4) nanocrystals (NCs). Rare-earth ions, such as gadolinium (Gd), neodymium (Nd), praseodymium (Pr), samarium (Sm) and holmium (Ho), were successfully doped in the CaWO4 NCs by changing the synthesis conditions. The adopted synthesis route was found to be fast and eco-friendly. Structural characterizations, such as X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and compositional analysis, were performed using energy dispersive analysis of X-rays (EDAX) on as-synthesized NCs. The results indicate the size of the NCs ranging between 47 to 68nm and incorporation of rare-earth ions in CaWO4 NCs.

Immobilization of folic acid on Eu3+-doped nanoporous silica spheres.

PubMed

Tagaya, Motohiro; Ikoma, Toshiyuki; Yoshioka, Tomohiko; Xu, Zhefeng; Tanaka, Junzo

2011-08-07

Folic acid (FA) was immobilized on Eu(3+)-doped nanoporous silica spheres (Eu:NPSs) through mediation of the 3-aminopropyltriethoxysilane adlayer. The ordered nanopores of Eu:NPS were preserved by the immobilization. The FA-immobilized Eu:NPSs showed the characteristic photoluminescence peak due to interactions between the FA molecules and Eu(3+) ions, and highly dispersed stability in phosphate buffered saline.

Dynamic Moisture Sorption and Desorption in Fumed Silica-filled Silicone Foam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trautschold, Olivia Carol

Characterizing dynamic moisture sorption and desorption in fumed silica-filled silicone foam is necessary for determining material compatibilities and life predictions, particularly in sealed environments that may be exposed to a range of environmental conditions. Thermogravimetric analysis (TGA) and near infrared spectroscopy (NIR) were performed on S5470 fumed silica-filled silicone foam to determine the weight percent of moisture at saturation. Additionally, TGA was used to determine the time, temperature, and relative humidity levels required for sorption and desorption of physisorbed moisture in S5470.

CMOS-compatible 2-bit optical spectral quantization scheme using a silicon-nanocrystal-based horizontal slot waveguide

PubMed Central

Kang, Zhe; Yuan, Jinhui; Zhang, Xianting; Wu, Qiang; Sang, Xinzhu; Farrell, Gerald; Yu, Chongxiu; Li, Feng; Tam, Hwa Yaw; Wai, P. K. A.

2014-01-01

All-optical analog-to-digital converters based on the third-order nonlinear effects in silicon waveguide are a promising candidate to overcome the limitation of electronic devices and are suitable for photonic integration. In this paper, a 2-bit optical spectral quantization scheme for on-chip all-optical analog-to-digital conversion is proposed. The proposed scheme is realized by filtering the broadened and split spectrum induced by the self-phase modulation effect in a silicon horizontal slot waveguide filled with silicon-nanocrystal. Nonlinear coefficient as high as 8708 W−1/m is obtained because of the tight mode confinement of the horizontal slot waveguide and the high nonlinear refractive index of the silicon-nanocrystal, which provides the enhanced nonlinear interaction and accordingly low power threshold. The results show that a required input peak power level less than 0.4 W can be achieved, along with the 1.98-bit effective-number-of-bit and Gray code output. The proposed scheme can find important applications in on-chip all-optical digital signal processing systems. PMID:25417847

CMOS-compatible 2-bit optical spectral quantization scheme using a silicon-nanocrystal-based horizontal slot waveguide.

PubMed

Kang, Zhe; Yuan, Jinhui; Zhang, Xianting; Wu, Qiang; Sang, Xinzhu; Farrell, Gerald; Yu, Chongxiu; Li, Feng; Tam, Hwa Yaw; Wai, P K A

2014-11-24

All-optical analog-to-digital converters based on the third-order nonlinear effects in silicon waveguide are a promising candidate to overcome the limitation of electronic devices and are suitable for photonic integration. In this paper, a 2-bit optical spectral quantization scheme for on-chip all-optical analog-to-digital conversion is proposed. The proposed scheme is realized by filtering the broadened and split spectrum induced by the self-phase modulation effect in a silicon horizontal slot waveguide filled with silicon-nanocrystal. Nonlinear coefficient as high as 8708 W(-1)/m is obtained because of the tight mode confinement of the horizontal slot waveguide and the high nonlinear refractive index of the silicon-nanocrystal, which provides the enhanced nonlinear interaction and accordingly low power threshold. The results show that a required input peak power level less than 0.4 W can be achieved, along with the 1.98-bit effective-number-of-bit and Gray code output. The proposed scheme can find important applications in on-chip all-optical digital signal processing systems.

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

PubMed Central

Hazut, Ori; Agarwala, Arunava; Subramani, Thangavel; Waichman, Sharon; Yerushalmi, Roie

2013-01-01

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms. In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station. PMID:24326774

Novel silica stabilization method for the analysis of fine nanocrystals using coherent X-ray diffraction imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Monteforte, Marianne; Estandarte, Ana K.; Chen, Bo

2016-06-23

High-energy X-ray Bragg coherent diffraction imaging (BCDI) is a well established synchrotron-based technique used to quantitatively reconstruct the three-dimensional morphology and strain distribution in nanocrystals. The BCDI technique has become a powerful analytical tool for quantitative investigations of nanocrystals, nanotubes, nanorods and more recently biological systems. BCDI has however typically failed for fine nanocrystals in sub-100?nm size regimes ? a size routinely achievable by chemical synthesis ? despite the spatial resolution of the BCDI technique being 20?30?nm. The limitations of this technique arise from the movement of nanocrystals under illumination by the highly coherent beam, which prevents full diffraction datamore » sets from being acquired. A solution is provided here to overcome this problem and extend the size limit of the BCDI technique, through the design of a novel stabilization method by embedding the fine nanocrystals into a silica matrix. Chemically synthesized FePt nanocrystals of maximum dimension 20?nm and AuPd nanocrystals in the size range 60?65?nm were investigated with BCDI measurement at beamline 34-ID-C of the APS, Argonne National Laboratory. Novel experimental methodologies to elucidate the presence of strain in fine nanocrystals are a necessary pre-requisite in order to better understand strain profiles in engineered nanocrystals for novel device development.« less

Novel silica stabilization method for the analysis of fine nanocrystals using coherent X-ray diffraction imaging.

PubMed

Monteforte, Marianne; Estandarte, Ana K; Chen, Bo; Harder, Ross; Huang, Michael H; Robinson, Ian K

2016-07-01

High-energy X-ray Bragg coherent diffraction imaging (BCDI) is a well established synchrotron-based technique used to quantitatively reconstruct the three-dimensional morphology and strain distribution in nanocrystals. The BCDI technique has become a powerful analytical tool for quantitative investigations of nanocrystals, nanotubes, nanorods and more recently biological systems. BCDI has however typically failed for fine nanocrystals in sub-100 nm size regimes - a size routinely achievable by chemical synthesis - despite the spatial resolution of the BCDI technique being 20-30 nm. The limitations of this technique arise from the movement of nanocrystals under illumination by the highly coherent beam, which prevents full diffraction data sets from being acquired. A solution is provided here to overcome this problem and extend the size limit of the BCDI technique, through the design of a novel stabilization method by embedding the fine nanocrystals into a silica matrix. Chemically synthesized FePt nanocrystals of maximum dimension 20 nm and AuPd nanocrystals in the size range 60-65 nm were investigated with BCDI measurement at beamline 34-ID-C of the APS, Argonne National Laboratory. Novel experimental methodologies to elucidate the presence of strain in fine nanocrystals are a necessary pre-requisite in order to better understand strain profiles in engineered nanocrystals for novel device development.

Porous silicon - rare earth doped xerogel and glass composites

NASA Astrophysics Data System (ADS)

Balakrishnan, S.; Gun'ko, Yurii K.; Perova, T. S.; Rafferty, A.; Astrova, E. V.; Moore, R. A.

2005-06-01

The development of components for photonics applications is growing exponentially. The sol-gel method is now recognised as a convenient and flexible way to deposit oxide or glass films on a variety of hosts, including porous silicon. In the present work we incorporated erbium and europium doped xerogel into porous silicon and developed new porous silicon - rare earth doped glass composites. Various characteris-ation techniques including FTIR, Raman Spectroscopy, Thermal Gravimetric Analysis and Scanning Electron Microscopy were employed in this work.

Nano-Welding of Multi-Walled Carbon Nanotubes on Silicon and Silica Surface by Laser Irradiation.

PubMed

Yuan, Yanping; Chen, Jimin

2016-02-24

In this study, a continuous fiber laser (1064 nm wavelength, 30 W/cm²) is used to irradiate multi-walled carbon nanotubes (MWCNTs) on different substrate surfaces. Effects of substrates on nano-welding of MWCNTs are investigated by scanning electron microscope (SEM). For MWCNTs on silica, after 3 s irradiation, nanoscale welding with good quality can be achieved due to breaking C-C bonds and formation of new graphene layers. While welding junctions can be formed until 10 s for the MWCNTs on silicon, the difference of irradiation time to achieve welding is attributed to the difference of thermal conductivity for silica and silicon. As the irradiation time is prolonged up to 12.5 s, most of the MWCNTs are welded to a silicon substrate, which leads to their frameworks of tube walls on the silicon surface. This is because the accumulation of absorbed energy makes the temperature rise. Then chemical reactions among silicon, carbon and nitrogen occur. New chemical bonds of Si-N and Si-C achieve the welding between the MWCNTs and silicon. Vibration modes of Si₃N₄ appear at peaks of 363 cm -1 and 663 cm -1 . There are vibration modes of SiC at peaks of 618 cm -1 , 779 cm -1 and 973 cm -1 . The experimental observation proves chemical reactions and the formation of Si₃N₄ and SiC by laser irradiation.

Systematic spatial and stoichiometric screening towards understanding the surface of ultrasmall oxygenated silicon nanocrystal

NASA Astrophysics Data System (ADS)

Niaz, Shanawer; Zdetsis, Aristides D.; Koukaras, Emmanuel N.; Gülseren, Oǧuz; Sadiq, Imran

2016-11-01

In most of the realistic ab initio and model calculations which have appeared on the emission of light from silicon nanocrystals, the role of surface oxygen has been usually ignored, underestimated or completely ruled out. We investigate theoretically, by density functional theory (DFT/B3LYP) possible modes of oxygen bonding in hydrogen terminated silicon quantum dots using as a representative case of the Si29 nanocrystal. We have considered Bridge-bonded oxygen (BBO), Doubly-bonded oxygen (DBO), hydroxyl (OH) and Mix of these oxidizing agents. Due to stoichiometry, all comparisons performed are unbiased with respect to composition whereas spatial distribution of oxygen species pointed out drastic change in electronic and cohesive characteristics of nanocrytals. From an overall perspective of this study, it is shown that bridge bonded oxygenated Si nanocrystals accompanied by Mix have higher binding energies and large electronic gap compared to nanocrystals with doubly bonded oxygen atoms. In addition, it is observed that the presence of OH along with BBO, DBO and mixed configurations further lowers electronic gaps and binding energies but trends in same fashion. It is also demonstrated that within same composition, oxidizing constituent, along with their spatial distribution substantially alters binding energy, highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) gap (up to 1.48 eV) and localization of frontier orbitals.

Hybrid solar cells from MDMO-PPV and silicon nanocrystals.

PubMed

Liu, Chin-Yi; Kortshagen, Uwe R

2012-07-07

Solution-processed bulk heterojunction solar cells from silicon nanocrystals (Si NCs) and poly(3-hexylthiophene) (P3HT) have shown promising power conversion efficiencies. Here we report on an attempt to enhance the performance of Si NC-polymer hybrid solar cells by using poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) as a hole conductor, which is expected to yield a higher open circuit voltage than P3HT due to its lower highest occupied molecular orbital (HOMO). Bulk heterojunction solar cells consisting of 3-5 nm silicon nanocrystals (Si NCs) and poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) have been fabricated. The properties of the hybrid Si NC/MDMO-PPV devices were studied as a function of the Si NC/MDMO-PPV weight ratio. Cells of 58 wt% 3-5 nm Si NCs showed the best overall performance under simulated one-sun AM 1.5 global illumination (100 mW cm(-2)). Compared to composite films of Si NCs and poly(3-hexylthiophene), we indeed observed an improved open circuit voltage but a lower power conversion efficiency from the Si NC/MDMO-PPV devices. The lower efficiency of Si NC/MDMO-PPV is correlated to the lower hole mobility and narrower absorption spectrum of MDMO-PPV compared to P3HT.

Eu-doped ZnO-HfO2 hybrid nanocrystal-embedded low-loss glass-ceramic waveguides

NASA Astrophysics Data System (ADS)

Ghosh, Subhabrata; N, Shivakiran Bhaktha B.

2016-03-01

We report on the sol-gel fabrication, using a dip-coating technique, of low-loss Eu-doped 70SiO2 -(30-x) HfO2-xZnO (x = 2, 5, 7 and 10 mol%) ternary glass-ceramic planar waveguides. Transmission electron microscopy and grazing incident x-ray diffraction experiments confirm the controlled growth of hybrid nanocrystals with an average size of 3 nm-25 nm, composed of ZnO encapsulated by a thin layer of nanocrystalline HfO2, with an increase of ZnO concentration from x = 2 mol% to 10 mol% in the SiO2-HfO2 composite matrix. The effect of crystallization on the local environment of Eu ions, doped in the ZnO-HfO2 hybrid nanocrystal-embedded glass-ceramic matrix, is studied using photoluminescence spectra, wherein an intense mixed-valence state (divalent as well as trivalent) emission of Eu ions is observed. The existence of Eu2+ and Eu3+ in the SiO2-HfO2-ZnO ternary matrix is confirmed by x-ray photoelectron spectroscopy. Importantly, the Eu{}2+,3+-doped ternary waveguides exhibit low propagation losses (0.3 ± 0.2 dB cm-1 at 632.8 nm) and optical transparency in the visible region of the electromagnetic spectrum, which makes ZnO-HfO2 nanocrystal-embedded SiO2-HfO2-ZnO waveguides a viable candidate for the development of on-chip, active, integrated optical devices.

Observation of Quantum Confinement in Monodisperse Methylammonium Lead Halide Perovskite Nanocrystals Embedded in Mesoporous Silica.

PubMed

Malgras, Victor; Tominaka, Satoshi; Ryan, James W; Henzie, Joel; Takei, Toshiaki; Ohara, Koji; Yamauchi, Yusuke

2016-10-13

Hybrid organic-inorganic metal halide perovskites have fascinating electronic properties and have already been implemented in various devices. Although the behavior of bulk metal halide perovskites has been widely studied, the properties of perovskite nanocrystals are less well-understood because synthesizing them is still very challenging, in part because of stability. Here we demonstrate a simple and versatile method to grow monodisperse CH 3 NH 3 PbBr x I x-3 perovskite nanocrystals inside mesoporous silica templates. The size of the nanocrystal is governed by the pore size of the templates (3.3, 3.7, 4.2, 6.2, and 7.1 nm). In-depth structural analysis shows that the nanocrystals maintain the perovskite crystal structure, but it is slightly distorted. Quantum confinement was observed by tuning the size of the particles via the template. This approach provides an additional route to tune the optical bandgap of the nanocrystal. The level of quantum confinement was modeled taking into account the dimensions of the rod-shaped nanocrystals and their close packing inside the channels of the template. Photoluminescence measurements on CH 3 NH 3 PbBr clearly show a shift from green to blue as the pore size is decreased. Synthesizing perovskite nanostructures in templates improves their stability and enables tunable electronic properties via quantum confinement. These structures may be useful as reference materials for comparison with other perovskites, or as functional materials in all solid-state light-emitting diodes.

Rare-earth metal oxide doped transparent mesoporous silica plates under non-aqueous condition as a potential UV sensor.

PubMed

Lee, Sang-Joon; Park, Sung Soo; Lee, Sang Hyun; Hong, Sang-Hyun; Ha, Chang-Sik

2013-11-01

Transparent mesoporous silica plates doped with rare-earth metal oxide were prepared using solvent-evaporation method based on the self-organization between structure-directing agent and silicate in a non-aqueous solvent. A triblock copolymer, Pluronic (F127 or P123), was used as the structure-directing agent, while tetraethyl orthosilicate (TEOS) was used as a silica source. The pore diameter and the surface area of the mesoporous silica plate prepared with the optimized conditions were ca 40 A and 600 m2 g(-1), respectively, for both structure-directing agent. Rare-earth metal oxides (Eu, Tb, Tm oxide) in mesochannel were formed via one-step synthetic route based on the preparation method of a silica plate. Optical properties of rare-earth metal oxide-doped mesoporous silica plates were investigated by UV irradiation and photoluminescence (PL) spectroscopy. Under the exitation wavelength of 254 nm, the doped mesoporous silica plates emitted red, green and blue for Eu, Tb and Tm oxides, respectively. Rare-earth metal oxide-doped mesoporous silica plates showed enhanced PL intensity compared to that of the bulk rare-earth metal oxide.

Effect Of Fluorine Doping On Radiation Hardness Of Graded Index Optical Fibers

NASA Astrophysics Data System (ADS)

Wei, T.; Singh, M. P.; Miniscalco, W. J.; Onorato, P. I. K.; Wall, J. A.

1987-01-01

We report an experimental and theoretical investigation of the effects of doping and processing on precursor defects in graded index multimode fibers. Fabrication parameters that significantly influence radiation sensitivity have been identified. In particular, we examined the role of fluorine doping in defect formation and its relationship to radiation sensitivity. The experimental effort included fiber fabrication and radiation-induced loss measurements on graded index, Ge-doped core fibers. Fluorine was added to the core and/or the cladding of test fibers. Two critical parameters, barrier layer thickness and core dopants, have been identified and correlate with induced loss. In addition, the reproducibility of both fiber fabrication and measurement with respect to induced loss has been tested and found to be excellent. Induced loss was found to be proportional to Ge concentration in the core; however, the trend with fluorine doping was less clear. The experimental results are consistent with molecular dynamics simulations which indicate the types and numbers of structural defects in the glasses. The simulations revealed significant differences in defect types and concentrations among glass corn-positions that included pure silica, Ge-doped silica, and Ge/F-codoped silica. Fluorine codoping decreases the number of germanium-related defects but increases the number of defects associated with silicon.

Resistless lithography - selective etching of silicon with gallium doping regions

NASA Astrophysics Data System (ADS)

Abdullaev, D.; Milovanov, R.; Zubov, D.

2016-12-01

This paper presents the results for used of resistless lithography with a further reactive-ion etching (RIE) in various chemistry after local (Ga+) implantation of silicon with different doping dose and different size doped regions. We describe the different etching regimes for pattern transfer of FIB implanted Ga masks in silicon. The paper studied the influence of the implantation dose on the silicon surface, the masking effect and the mask resistance to erosion at dry etching. Based on these results we conclude about the possibility of using this method to create micro-and nanoscale silicon structures.

Nano-Welding of Multi-Walled Carbon Nanotubes on Silicon and Silica Surface by Laser Irradiation

PubMed Central

Yuan, Yanping; Chen, Jimin

2016-01-01

In this study, a continuous fiber laser (1064 nm wavelength, 30 W/cm2) is used to irradiate multi-walled carbon nanotubes (MWCNTs) on different substrate surfaces. Effects of substrates on nano-welding of MWCNTs are investigated by scanning electron microscope (SEM). For MWCNTs on silica, after 3 s irradiation, nanoscale welding with good quality can be achieved due to breaking C–C bonds and formation of new graphene layers. While welding junctions can be formed until 10 s for the MWCNTs on silicon, the difference of irradiation time to achieve welding is attributed to the difference of thermal conductivity for silica and silicon. As the irradiation time is prolonged up to 12.5 s, most of the MWCNTs are welded to a silicon substrate, which leads to their frameworks of tube walls on the silicon surface. This is because the accumulation of absorbed energy makes the temperature rise. Then chemical reactions among silicon, carbon and nitrogen occur. New chemical bonds of Si–N and Si–C achieve the welding between the MWCNTs and silicon. Vibration modes of Si3N4 appear at peaks of 363 cm−1 and 663 cm−1. There are vibration modes of SiC at peaks of 618 cm−1, 779 cm−1 and 973 cm−1. The experimental observation proves chemical reactions and the formation of Si3N4 and SiC by laser irradiation. PMID:28344293

Tunable Magnetic Exchange Interactions in Manganese-Doped Inverted Core-Shell ZnSe-CdSe Nanocrystals

DTIC Science & Technology

2009-01-01

exchange coupling even for a singlemagnetic dopant atom12,17. Whereas magnetically doped monocomponent nanocrystals are well established16, wavefunction...Solid State Commun. 114, 547–550 (2000). 13. Radovanovic, P. V. & Gamelin, D. R. Electronic absorption spectroscopy of cobalt ions in diluted magnetic...D. R. Inorganic cluster syntheses of TM2+-doped quantum dots (CdSe, CdS, CdSe/CdS): Physical property dependence on dopant locale. J. Am. Chem. Soc

p-type doping by platinum diffusion in low phosphorus doped silicon

NASA Astrophysics Data System (ADS)

Ventura, L.; Pichaud, B.; Vervisch, W.; Lanois, F.

2003-07-01

In this work we show that the cooling rate following a platinum diffusion strongly influences the electrical conductivity in weakly phosphorus doped silicon. Diffusions were performed at the temperature of 910 °C in the range of 8 32 hours in 0.6, 30, and 60 Ωrm cm phosphorus doped silicon samples. Spreading resistance profile analyses clearly show an n-type to p-type conversion under the surface when samples are cooled slowly. On the other hand, a compensation of the phosphorus donors can only be observed when samples are quenched. One Pt related acceptor deep level at 0.43 eV from the valence band is assumed to be at the origin of the type conversion mechanism. Its concentration increases by lowering the applied cooling rate. A complex formation with fast species such as interstitial Pt atoms or intrinsic point defects is expected. In 0.6 Ωrm cm phosphorus doped silicon, no acceptor deep level in the lower band gap is detected by DLTS measurement. This removes the opportunity of a pairing between phosphorus and platinum and suggests the possibility of a Fermi level controlled complex formation.

Cobalt-doped ZnO nanocrystals: quantum confinement and surface effects from ab initio methods.

PubMed

Schoenhalz, Aline L; Dalpian, Gustavo M

2013-10-14

Cobalt-doped ZnO nanocrystals were studied through ab initio methods based on the Density Functional Theory. Both quantum confinement and surface effects were explicitly taken into account. When only quantum confinement effects are considered, Co atoms interact through a superexchange mechanism, stabilizing an antiferromagnetic ground state. Usually, this is the case for high quality nanoparticles with perfect surface saturation. When the surfaces were considered, a strong hybridization between the Co atoms and surfaces was observed, strongly changing their electronic and magnetic properties. Our results indicated that the surfaces might qualitatively change the properties of impurities in semiconductor nanocrystals.

Spectroscopic properties of Tm3+/Al3+ co-doped sol-gel silica glass

NASA Astrophysics Data System (ADS)

Wang, Xue; Lou, Fengguang; Wang, Shikai; Yu, Chunlei; Chen, Danping; Hu, Lili

2015-04-01

Tm3+/Al3+ co-doped silica glass was prepared by sol-gel method combined with high temperature sintering. Glasses with compositions of xTm2O3-15xAl2O3-(100 - 16x) SiO2 (in mol%, x = 0.1, 0.3, 0.5, 0.8 and 1.0) were prepared. The high thulium doped silica glass was realized. Their spectroscopic parameters were calculated and analyzed by Judd-Ofelt theory. Large absorption cross section (4.65 × 10-21 cm2 at 1668 nm) and stimulated emission cross section (6.00 × 10-21 cm2 at 1812 nm), as well as low hydroxyl content (0.180 cm-1), long fluorescence lifetime (834 μs at 1800 nm), large σem × τrad (30.05 × 10-21 cm2 ms) and large relative intensity ratio of the 1.8 μm (3F4 → 3H6) to 1.46 (3H4 → 3F4) emissions (90.33) are achieved in this Tm3+/Al3+ co-doped silica glasses. According to emission characteristics, the optimum thulium doping concentration is around 0.8 mol%. The cross relaxation (CR) between ground and excited states of Tm3+ ions was used to explain the optimum thulium doping concentration. These results suggest that the sol-gel method is an effective way to prepare Tm3+ doped silica glass with high Tm3+ doping and prospective spectroscopic properties.

Fabrication and characterization of physically defined quantum dots on a boron-doped silicon-on-insulator substrate

NASA Astrophysics Data System (ADS)

Mizoguchi, Seiya; Shimatani, Naoki; Kobayashi, Mizuki; Makino, Takaomi; Yamaoka, Yu; Kodera, Tetsuo

2018-04-01

We study hole transport properties in physically defined p-type silicon quantum dots (QDs) on a heavily doped silicon-on-insulator (SOI) substrate. We observe Coulomb diamonds using single QDs and estimate the charging energy as ∼1.6 meV. We obtain the charge stability diagram of double QDs using single QDs as a charge sensor. This is the first demonstration of charge sensing in p-type heavily doped silicon QDs. For future time-resolved measurements, we apply radio-frequency reflectometry using impedance matching of LC circuits to the device. We observe the resonance and estimate the capacitance as ∼0.12 pF from the resonant frequency. This value is smaller than that of the devices with top gates on nondoped SOI substrate. This indicates that high-frequency signals can be applied efficiently to p-type silicon QDs without top gates.

Organically Modified Silicas on Metal Nanowires

PubMed Central

2010-01-01

Organically modified silica coatings were prepared on metal nanowires using a variety of silicon alkoxides with different functional groups (i.e., carboxyl groups, polyethylene oxide, cyano, dihydroimidazole, and hexyl linkers). Organically modified silicas were deposited onto the surface of 6-μm-long, ∼300-nm-wide, cylindrical metal nanowires in suspension by the hydrolysis and polycondensation of silicon alkoxides. Syntheses were performed at several ratios of tetraethoxysilane to an organically modified silicon alkoxide to incorporate desired functional groups into thin organosilica shells on the nanowires. These coatings were characterized using transmission electron microscopy, X-ray photoelectron spectroscopy, and infrared spectroscopy. All of the organically modified silicas prepared here were sufficiently porous to allow the removal of the metal nanowire cores by acid etching to form organically modified silica nanotubes. Additional functionality provided to the modified silicas as compared to unmodified silica prepared using only tetraethoxysilane precursors was demonstrated by chromate adsorption on imidazole-containing silicas and resistance to protein adsorption on polyethyleneoxide-containing silicas. Organically modified silica coatings on nanowires and other nano- and microparticles have potential application in fields such as biosensing or nanoscale therapeutics due to the enhanced properties of the silica coatings, for example, the prevention of biofouling. PMID:20715881

a Study of Oxygen Precipitation in Heavily Doped Silicon.

NASA Astrophysics Data System (ADS)

Graupner, Robert Kurt

Gettering of impurities with oxygen precipitates is widely used during the fabrication of semiconductors to improve the performance and yield of the devices. Since the effectiveness of the gettering process is largely dependent on the initial interstitial oxygen concentration, accurate measurements of this parameter are of considerable importance. Measurements of interstitial oxygen following thermal cycles are required for development of semiconductor fabrication processes and for research into the mechanisms of oxygen precipitate nucleation and growth. Efforts by industrial associations have led to the development of standard procedures for the measurement of interstitial oxygen in wafers. However practical oxygen measurements often do not satisfy the requirements of such standard procedures. An additional difficulty arises when the silicon wafer has a low resitivity (high dopant concentration). In such cases the infrared light used for the measurement is severely attenuated by the electrons of holes introduced by the dopant. Since such wafers are the substrates used for the production of widely used epitaxial wafers, this measurement problem is economically important. Alternative methods such as Secondary Ion Mass Spectroscopy or Gas Fusion Analysis have been developed to measure oxygen in these cases. However, neither of these methods is capable of distinguishing interstitial oxygen from precipitated oxygen as required for precipitation studies. In addition to the commercial interest in heavily doped silicon substrates, they are also of interest for research into the role of point defects in nucleation and precipitation processes. Despite considerable research effort, there is still disagreement concerning the type of point defect and its role in semiconductor processes. Studies of changes in the interstitial oxygen concentration of heavily doped and lightly doped silicon wafers could help clarify the role of point defects in oxygen nucleation and precipitation

Influence of the doping level on the porosity of silicon nanowires prepared by metal-assisted chemical etching

NASA Astrophysics Data System (ADS)

Geyer, Nadine; Wollschläger, Nicole; Fuhrmann, Bodo; Tonkikh, Alexander; Berger, Andreas; Werner, Peter; Jungmann, Marco; Krause-Rehberg, Reinhard; Leipner, Hartmut S.

2015-06-01

A systematic method to control the porosity of silicon nanowires is presented. This method is based on metal-assisted chemical etching (MACE) and takes advantage of an HF/H2O2 etching solution and a silver catalyst in the form of a thin patterned film deposited on a doped silicon wafer. It is found that the porosity of the etched nanowires can be controlled by the doping level of the wafer. For low doping concentrations, the wires are primarily crystalline and surrounded by only a very thin layer of porous silicon (pSi) layer, while for highly doped silicon, they are porous in their entire volume. We performed a series of controlled experiments to conclude that there exists a well-defined critical doping concentration separating the crystalline and porous regimes. Furthermore, transmission electron microscopy investigations showed that the pSi has also a crystalline morphology on a length scale smaller than the pore size, determined from positron annihilation lifetime spectroscopy to be mesoscopic. Based on the experimental evidence, we devise a theoretical model of the pSi formation during MACE and apply it for better control of the nanowire morphology.

Compact Quantum Random Number Generator with Silicon Nanocrystals Light Emitting Device Coupled to a Silicon Photomultiplier

NASA Astrophysics Data System (ADS)

Bisadi, Zahra; Acerbi, Fabio; Fontana, Giorgio; Zorzi, Nicola; Piemonte, Claudio; Pucker, Georg; Pavesi, Lorenzo

2018-02-01

A small-sized photonic quantum random number generator, easy to be implemented in small electronic devices for secure data encryption and other applications, is highly demanding nowadays. Here, we propose a compact configuration with Silicon nanocrystals large area light emitting device (LED) coupled to a Silicon photomultiplier to generate random numbers. The random number generation methodology is based on the photon arrival time and is robust against the non-idealities of the detector and the source of quantum entropy. The raw data show high quality of randomness and pass all the statistical tests in national institute of standards and technology tests (NIST) suite without a post-processing algorithm. The highest bit rate is 0.5 Mbps with the efficiency of 4 bits per detected photon.

Designing lanthanide-doped nanocrystals with both up- and down-conversion luminescence for anti-counterfeiting

NASA Astrophysics Data System (ADS)

Liu, Yanlan; Ai, Kelong; Lu, Lehui

2011-11-01

The widespread forgery in all kinds of paper documents and certificates has become a real threat to society. Traditional fluorescent anti-counterfeiting materials generally exhibit unicolor display and suffer greatly from substitution, thus leading to a poor anti-counterfeiting effect. In this work, unseen but significant enhanced blue down-conversion emission from oleic acid-stabilized lanthanide-doped fluoride nanocrystals is first present and the mechanism is proposed and validated. This not only endows these nanocrystals with dual-mode fluorescence, but also offers a simplified synthesis approach for dual-mode fluorescent nanocrystals involving no further complicated assembly or coating procedures, unlike the traditional methods. Furthermore, by changing the host/dopant combination or the content of dopant, these nanocrystals can exhibit simultaneously multicolor up-conversion emission under excitation at near-infrared light and unalterable blue down-conversion emission under ultraviolet light. A preliminary investigation of their anti-counterfeiting performance has been made, and the results indicate that this color tuning capability and high concealment makes these nanocrystals behave in a similar way to chameleons and can provide a strengthened and more reliable anti-counterfeiting effect.The widespread forgery in all kinds of paper documents and certificates has become a real threat to society. Traditional fluorescent anti-counterfeiting materials generally exhibit unicolor display and suffer greatly from substitution, thus leading to a poor anti-counterfeiting effect. In this work, unseen but significant enhanced blue down-conversion emission from oleic acid-stabilized lanthanide-doped fluoride nanocrystals is first present and the mechanism is proposed and validated. This not only endows these nanocrystals with dual-mode fluorescence, but also offers a simplified synthesis approach for dual-mode fluorescent nanocrystals involving no further complicated

Biomimetic synthesis of chiral erbium-doped silver/peptide/silica core-shell nanoparticles (ESPN)

NASA Astrophysics Data System (ADS)

Mantion, Alexandre; Graf, Philipp; Florea, Ileana; Haase, Andrea; Thünemann, Andreas F.; Mašić, Admir; Ersen, Ovidiu; Rabu, Pierre; Meier, Wolfgang; Luch, Andreas; Taubert, Andreas

2011-12-01

Peptide-modified silver nanoparticles have been coated with an erbium-doped silica layer using a method inspired by silica biomineralization. Electron microscopy and small-angle X-ray scattering confirm the presence of an Ag/peptide core and silica shell. The erbium is present as small Er2O3 particles in and on the silica shell. Raman, IR, UV-Vis, and circular dichroism spectroscopies show that the peptide is still present after shell formation and the nanoparticles conserve a chiral plasmon resonance. Magnetic measurements find a paramagnetic behavior. In vitro tests using a macrophage cell line model show that the resulting multicomponent nanoparticles have a low toxicity for macrophages, even on partial dissolution of the silica shell.Peptide-modified silver nanoparticles have been coated with an erbium-doped silica layer using a method inspired by silica biomineralization. Electron microscopy and small-angle X-ray scattering confirm the presence of an Ag/peptide core and silica shell. The erbium is present as small Er2O3 particles in and on the silica shell. Raman, IR, UV-Vis, and circular dichroism spectroscopies show that the peptide is still present after shell formation and the nanoparticles conserve a chiral plasmon resonance. Magnetic measurements find a paramagnetic behavior. In vitro tests using a macrophage cell line model show that the resulting multicomponent nanoparticles have a low toxicity for macrophages, even on partial dissolution of the silica shell. Electronic supplementary information (ESI) available: Figures S1 to S12, Tables S1 and S2. See DOI: 10.1039/c1nr10930h

Structure and intense UV up-conversion emissions in RE3+-doped sol-gel glass-ceramics containing KYF4 nanocrystals

NASA Astrophysics Data System (ADS)

Yanes, A. C.; Santana-Alonso, A.; Méndez-Ramos, J.; del-Castillo, J.

2013-12-01

Transparent nano-glass-ceramics containing KYF4 nanocrystals were successfully obtained by the sol-gel method, doped with Eu3+ and co-doped with Yb3+ and Tm3+ ions. Precipitation of cubic KYF4 nanocrystals was confirmed by X-ray diffraction and high-resolution transmission electron microscope images. Excitation and emission spectra let us to discern between ions into KYF4 nanocrystals and those remaining in a glassy environment, supplemented with time-resolved photoluminescence decays, that also clearly reveal differences between local environments. Unusual high-energy up-conversion emissions in the UV range were obtained in Yb3+-Tm3+ co-doped samples, and involved mechanisms were discussed. The intensity of these high-energy emissions was analyzed as a function of Yb3+ concentration, heat treatment temperature of precursor sol-gel glasses and pump power, determining the optimum values for potential optical applications as highly efficient UV up-conversion materials in UV solid-state lasers.

High-Bandgap Silicon Nanocrystal Solar Cells: Device Fabrication, Characterization, and Modeling

NASA Astrophysics Data System (ADS)

Löper, Philipp; Canino, Mariaconcetta; Schnabel, Manuel; Summonte, Caterina; Janz, Stefan; Zacharias, Margit

Silicon nanocrystals (Si NCs) embedded in Si-based dielectrics provide a Si-based high-bandgap material (1.7 eV) and enable the construction of crystalline Si tandem solar cells. This chapter focusses on Si NC embedded in silicon carbide, because silicon carbide offers electrical conduction through the matrix material. The material development is reviewed, and optical modeling is introduced as a powerful method to monitor the four material components, amorphous and crystalline silicon as well as amorphous and crystalline silicon carbide. In the second part of this chapter, recent device developments for the photovoltaic characterization of Si NCs are examined. The controlled growth of Si NCs involves high-temperature annealing which deteriorates the properties of any previously established selective contacts. A membrane-based device is presented to overcome these limitations. In this approach, the formation of both selective contacts is carried out after high-temperature annealing and is therefore not affected by the latter. We examine p-i-n solar cells with an intrinsic region made of Si NCs embedded in silicon carbide. Device failure due to damaged insulation layers is analyzed by light beam-induced current measurements. An optical model of the device is presented for improving the cell current. A characterization scheme for Si NC p-i-n solar cells is presented which aims at determining the fundamental transport and recombination properties, i.e., the effective mobility lifetime product, of the nanocrystal layer at device level. For this means, an illumination-dependent analysis of Si NC p-i-n solar cells is carried out within the framework of the constant field approximation. The analysis builds on an optical device model, which is used to assess the photogenerated current in each of the device layers. Illumination-dependent current-voltage curves are modelled with a voltage-dependent current collection function with only two free parameters, and excellent

High Resolution Fluorescence Imaging of Cancers Using Lanthanide Ion-Doped Upconverting Nanocrystals

PubMed Central

Naccache, Rafik; Rodríguez, Emma Martín; Bogdan, Nicoleta; Sanz-Rodríguez, Francisco; de la Cruz, Maria del Carmen Iglesias; de la Fuente, Ángeles Juarranz; Vetrone, Fiorenzo; Jaque, Daniel; Solé, José García; Capobianco, John A.

2012-01-01

During the last decade inorganic luminescent nanoparticles that emit visible light under near infrared (NIR) excitation (in the biological window) have played a relevant role for high resolution imaging of cancer. Indeed, semiconductor quantum dots (QDs) and metal nanoparticles, mostly gold nanorods (GNRs), are already commercially available for this purpose. In this work we review the role which is being played by a relatively new class of nanoparticles, based on lanthanide ion doped nanocrystals, to target and image cancer cells using upconversion fluorescence microscopy. These nanoparticles are insulating nanocrystals that are usually doped with small percentages of two different rare earth (lanthanide) ions: The excited donor ions (usually Yb3+ ion) that absorb the NIR excitation and the acceptor ions (usually Er3+, Ho3+ or Tm3+), that are responsible for the emitted visible (or also near infrared) radiation. The higher conversion efficiency of these nanoparticles in respect to those based on QDs and GNRs, as well as the almost independent excitation/emission properties from the particle size, make them particularly promising for fluorescence imaging. The different approaches of these novel nanoparticles devoted to “in vitro” and “in vivo” cancer imaging, selective targeting and treatment are examined in this review. PMID:24213500

Synthesis and Study of Fe-Doped Bi₂S₃ Semimagnetic Nanocrystals Embedded in a Glass Matrix.

PubMed

Silva, Ricardo S; Mikhail, Hanna D; Guimarães, Eder V; Gonçalves, Elis R; Cano, Nilo F; Dantas, Noelio O

2017-07-11

Iron-doped bismuth sulphide (Bi 2- x Fe x S₃) nanocrystals have been successfully synthesized in a glass matrix using the fusion method. Transmission electron microscopy images and energy dispersive spectroscopy data clearly show that nanocrystals are formed with an average diameter of 7-9 nm, depending on the thermic treatment time, and contain Fe in their chemical composition. Magnetic force microscopy measurements show magnetic phase contrast patterns, providing further evidence of Fe incorporation in the nanocrystal structure. The electron paramagnetic resonance spectra displayed Fe 3+ typical characteristics, with spin of 5/2 in the 3d⁵ electronic state, thereby confirming the expected trivalent state of Fe ions in the Bi₂S₃ host structure. Results from the spin polarized density functional theory simulations, for the bulk Fe-doped Bi₂S₃ counterpart, corroborate the experimental fact that the volume of the unit cell decreases with Fe substitutionally doping at Bi1 and Bi2 sites. The Bader charge analysis indicated a pseudo valency charge of 1.322| e | on Fe Bi ₁ and 1.306| e | on Fe Bi ₂ ions, and a spin contribution for the magnetic moment of 5.0 µ B per unit cell containing one Fe atom. Electronic band structures showed that the (indirect) band gap changes from 1.17 eV for Bi₂S₃ bulk to 0.71 eV (0.74 eV) for Bi₂S₃:Fe Bi1 (Bi₂S₃:Fe Bi2 ). These results are compatible with the 3d⁵ high-spin state of Fe 3+ , and are in agreement with the experimental results, within the density functional theory accuracy.

Mode coupling in 340 μm GeO2 doped core-silica clad optical fibers

NASA Astrophysics Data System (ADS)

Djordjevich, Alexandar; Savović, Svetislav

2017-03-01

The state of mode coupling in 340 μm GeO2 doped core-silica clad optical fibers is investigated in this article using the power flow equation. The coupling coefficient in this equation was first tuned such that the equation could correctly reconstruct previously reported measured output power distributions. It was found that the GeO2 doped core-silica clad optical fiber showed stronger mode coupling than both, glass and popular plastic optical fibers. Consequently, the equilibrium as well as steady state mode distributions were achieved at shorter fiber lengths in GeO2 doped core-silica clad optical fibers.

Synthesis and devolatilization of M-97 NVB silicone gum compounded into silica reinforced silicone base

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schneider, J.W.

1986-06-01

Silica reinforced silicon bases having 0.31 weight percent vinyl content were prepared by using a blend of low and high vinyl content devolatilized M-97 NVB silicone gum. The M-97 NVB is a custom dimethyl-, diphenyl-, methylvinylsiloxane gum. The silicon gum was devolatilized to evaluate the anticipated improved handling characteristics. Previous procured batches of M-97 NVB had not been devolatilized and difficult handling problems were encountered. The synthesis, devolatilization, and compound processes for the M-97 NVB silicone gum are discussed.

Probing the Influence of Disorder on Lanthanide Luminescence Using Eu-Doped LaPO4 Nanoparticles

PubMed Central

2017-01-01

Lanthanide-doped nanocrystals (NCs) differ from their bulk counterparts due to their large surface to volume ratio. It is generally assumed that the optical properties are not affected by size effects as electronic transitions occur within the well-shielded 4f shell of the lanthanide dopant ions. However, defects and disorder in the surface layer can affect the luminescence properties. Trivalent europium is a suitable ion to investigate the subtle influence of the surface, because of its characteristic luminescence and high sensitivity to the local environment. Here, we investigate the influence of disorder in NCs on the optical properties of lanthanide dopants by studying the inhomogeneous linewidth, emission intensity ratios, and luminescence decay curves for LaPO4:Eu3+ samples of different sizes (4 nm to bulk) and core–shell configurations (core, core–isocrystalline shell, and core–silica shell). We show that the emission linewidths increase strongly for NCs. The ratio of the intensities of the forced electric dipole (ED) and magnetic dipole (MD) transitions, a measure for the local symmetry distortion around Eu3+ ions, is higher for samples with a large fraction of Eu3+ ions close to the surface. Finally, we present luminescence decay curves revealing an increased nonradiative decay rate for Eu3+ in NCs. The effects are strongest in core and core–silica shell NCs and can be reduced by growth of an isocrystalline LaPO4 shell. The present systematic study provides quantitative insight into the role of surface disorder on the optical properties of lanthanide-doped NCs. These insights are important in emerging applications of lanthanide-doped nanocrystals. PMID:28919934

Enhanced red photoluminescence of quartz by silicon nanocrystals thin film deposition

NASA Astrophysics Data System (ADS)

Momeni, A.; Pourgolestani, M.; Taheri, M.; Mansour, N.

2018-03-01

The room-temperature photoluminescence properties of silicon nanocrystals (SiNCs) thin film on a quartz substrate were investigated, which presents the red emission enhancement of quartz. We show that the photoluminescence intensity of quartz, in the wavelength range of 640-700 nm, can be enhanced as much as 15-fold in the presence of the SiNCs thin film. Our results reveal that the defect states at the SiNCs/SiO2 interface can be excited more efficiently by indirect excitation via the SiNCs, leading to the prominent red photoluminescence enhancement under the photo-excitation in the range of 440-470 nm. This work suggests a simple pathway to improve silicon-based light emitting devices for photonic applications.

Red-luminescent europium (III) doped silica nanoshells: synthesis, characterization, and their interaction with HeLa cells

NASA Astrophysics Data System (ADS)

Yang, Jian; Sandoval, Sergio; Alfaro, Jesus G.; Aschemeyer, Sharraya; Liberman, Alex; Martin, David T.; Makale, Milan; Kummel, Andrew C.; Trogler, William C.

2011-06-01

A simple method to fabricate Eu3+ doped silica nanoshells particles with 100 and 200 nm diameters is reported. Amino polystyrene beads were used as templates, and an 8 to 10 nm thick silica gel coating was formed by the sol-gel reaction. After removing the template by calcination, porous dehydrated silica gel nanoshells of uniform size were obtained. The Eu3+ doped silica nanoshells exhibited a red emission at 615 nm on UV excitation. The porous structure of the silica shell wall was characterized by transmission electron microscopy measurements, while particle size and zeta potentials of the particles suspended in aqueous solution were characterized by dynamic light scattering. Two-photon microscopy was used to image the nanoshells after assimilation by HeLa cancer cells.

Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts

NASA Astrophysics Data System (ADS)

Girard, A.; Coulon, N.; Cardinaud, C.; Mohammed-Brahim, T.; Geneste, F.

2014-09-01

The chemical modification of doped polycrystalline silicon materials (N+, N++ and P++) and silicon (1 0 0) and (1 1 1) used as references is investigated by spontaneous reduction of diazonium salts. The effectiveness of the grafting process on all polySi surfaces is shown by AFM and XPS analyses. The effect of substrate doping on the efficiency of the electrografting process is compared by using the thicknesses of the deposited organic films. For a better accuracy, two methods are used to estimate the thicknesses: XPS and the coupling of a O2 plasma etching with AFM measurement. Structural characteristics of the poly-Si films were investigated by Scanning Electron Microscopy and X-ray diffraction to find a correlation between the structure of the material and its reactivity. Different parameters that could have an impact on the efficiency of the grafting procedure are discussed. The observed differences between differently doped silicon surfaces is rather limited, this is in agreement with the radical character of the reacting species.

Size Dependence of Doping by a Vacancy Formation Reaction in Copper Sulfide Nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elimelech, Orian; Liu, Jing; Plonka, Anna M.

Doping of nanocrystals (NCs) is a key, yet underexplored, approach for tuning of the electronic properties of semiconductors. An important route for doping of NCs is by vacancy formation. The size and concentration dependence of doping was studied in copper(I) sulfide (Cu2S) NCs through a redox reaction with iodine molecules (I2), which formed vacancies accompanied by a localized surface plasmon response. X-ray spectroscopy and diffraction reveal transformation from Cu2S to Cu-depleted phases, along with CuI formation. Greater reaction efficiency was observed for larger NCs. This behavior is attributed to interplay of the vacancy formation energy, which decreases for smaller sizedmore » NCs, and the growth of CuI on the NC surface, which is favored on well-defined facets of larger NCs. This doping process allows tuning of the plasmonic properties of a semiconductor across a wide range of plasmonic frequencies by varying the size of NCs and the concentration of iodine. Controlled vacancy doping of NCs may be used to tune and tailor semiconductors for use in optoelectronic applications.« less

Radiation hardness of Ce-doped sol-gel silica fibers for high energy physics applications.

PubMed

Cova, Francesca; Moretti, Federico; Fasoli, Mauro; Chiodini, Norberto; Pauwels, Kristof; Auffray, Etiennette; Lucchini, Marco Toliman; Baccaro, Stefania; Cemmi, Alessia; Bártová, Hana; Vedda, Anna

2018-02-15

The results of irradiation tests on Ce-doped sol-gel silica using x- and γ-rays up to 10 kGy are reported in order to investigate the radiation hardness of this material for high-energy physics applications. Sol-gel silica fibers with Ce concentrations of 0.0125 and 0.05 mol. % are characterized by means of optical absorption and attenuation length measurements before and after irradiation. The two different techniques give comparable results, evidencing the formation of a main broad radiation-induced absorption band, peaking at about 2.2 eV, related to radiation-induced color centers. The results are compared with those obtained on bulk silica. This study reveals that an improvement of the radiation hardness of Ce-doped silica fibers can be achieved by reducing Ce content inside the fiber core, paving the way for further material development.

Self-assembly of water-soluble nanocrystals

DOEpatents

Fan, Hongyou [Albuquerque, NM; Brinker, C Jeffrey [Albuquerque, NM; Lopez, Gabriel P [Albuquerque, NM

2012-01-10

A method for forming an ordered array of nanocrystals where a hydrophobic precursor solution with a hydrophobic core material in an organic solvent is added to a solution of a surfactant in water, followed by removal of a least a portion of the organic solvent to form a micellar solution of nanocrystals. A precursor co-assembling material, generally water-soluble, that can co-assemble with individual micelles formed in the micellar solution of nanocrystals can be added to this micellar solution under specified reaction conditions (for example, pH conditions) to form an ordered-array mesophase material. For example, basic conditions are used to precipitate an ordered nanocrystal/silica array material in bulk form and acidic conditions are used to form an ordered nanocrystal/silica array material as a thin film.

Record power, ultra-broadband supercontinuum source based on highly GeO₂ doped silica fiber.

PubMed

Jain, D; Sidharthan, R; Moselund, P M; Yoo, S; Ho, D; Bang, O

2016-11-14

We demonstrate highly germania doped fibers for mid-infrared supercontinuum generation. Experiments ensure a highest output power of 1.44 W for a broadest spectrum from 700 nm to 3200 nm and 6.4 W for 800 nm to 2700 nm from these fibers, while being pumped by a broadband Erbium-Ytterbium doped fiber based master oscillator power amplifier. The effect of repetition frequency of pump source and length of germania-doped fiber has also been investigated. Further, germania doped fiber has been pumped by conventional supercontinuum source based on silica photonic crystal fiber supercontinuum source. At low power, a considerable broadening of 200-300 nm was observed. Further broadening of spectrum was limited due to limited power of pump source. Our investigations reveal the unexploited potential of germania doped fiber for mid-infrared supercontinuum generation. These measurements ensure the potential of germania based photonic crystal fiber or a step-index fiber supercontinuum source for high power ultra-broad band emission being by pumped a 1060 nm or a 1550 nm laser source. To the best of our knowledge, this is the record power, ultra-broadband, and all-fiberized supercontinuum light source based on silica and germania fiber ever demonstrated to the date.

Low temperature coefficient of resistance and high gage factor in beryllium-doped silicon

NASA Technical Reports Server (NTRS)

Robertson, J. B.; Littlejohn, M. A.

1974-01-01

The gage factor and resistivity of p-type silicon doped with beryllium was studied as a function of temperature, crystal orientation, and beryllium doping concentration. It was shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gage factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, whereas the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

Plasmonic doped semiconductor nanocrystals: Properties, fabrication, applications and perspectives

NASA Astrophysics Data System (ADS)

Kriegel, Ilka; Scotognella, Francesco; Manna, Liberato

2017-02-01

Degenerately doped semiconductor nanocrystals (NCs) are of recent interest to the NC community due to their tunable localized surface plasmon resonances (LSPRs) in the near infrared (NIR). The high level of doping in such materials with carrier densities in the range of 1021cm-3 leads to degeneracy of the doping levels and intense plasmonic absorption in the NIR. The lower carrier density in degenerately doped semiconductor NCs compared to noble metals enables LSPR tuning over a wide spectral range, since even a minor change of the carrier density strongly affects the spectral position of the LSPR. Two classes of degenerate semiconductors are most relevant in this respect: impurity doped semiconductors, such as metal oxides, and vacancy doped semiconductors, such as copper chalcogenides. In the latter it is the density of copper vacancies that controls the carrier concentration, while in the former the introduction of impurity atoms adds carriers to the system. LSPR tuning in vacancy doped semiconductor NCs such as copper chalcogenides occurs by chemically controlling the copper vacancy density. This goes in hand with complex structural modifications of the copper chalcogenide crystal lattice. In contrast the LSPR of degenerately doped metal oxide NCs is modified by varying the doping concentration or by the choice of host and dopant atoms, but also through the addition of capacitive charge carriers to the conduction band of the metal oxide upon post-synthetic treatments, such as by electrochemical- or photodoping. The NIR LSPRs and the option of their spectral fine-tuning make accessible important new features, such as the controlled coupling of the LSPR to other physical signatures or the enhancement of optical signals in the NIR, sensing application by LSPR tracking, energy production from the NIR plasmon resonance or bio-medical applications in the biological window. In this review we highlight the recent advances in the synthesis of various different plasmonic

Colloidal inorganic nanocrystals: Nucleation, growth and biological applications

NASA Astrophysics Data System (ADS)

Lynch, Jared James

Colloidal inorganic nanocrystals are a class of material whose size ranges from a few nanometers to a hundred nanometers in dimension. These nanocrystals have size dependent properties that differ significantly from the bulk material counterparts. Due to their unique physical properties colloidal inorganic nanocrystals have several promising applications in a diverse range of areas, such as biomedical diagnosis, catalysis, plasmonics, high-density data storage and solar energy conversion. This dissertation presents the study of the formation of iron oxide nanocrystals under the influence of solvent and Ar gas bubbles, the phase transfer of metal oxide nanocrystals into water using inorganic ions, and the doping of semiconductor CdS/ZnS core/shell nanocrystals with copper and silver ions. First, the formation of iron oxide nanocrystals is investigated in the presence of boiling solvent or Ar bubbles. Using a non-injection based synthesis method, the thermal decomposition of iron oleate was studied under various reaction conditions, and the role of the bubbles on the nucleation and growth of iron oxide nanocrystals was determined. Kinetics studies were used to elucidate how latent heat transfer from the bubbles allows for "active monomers" to form preferentially from exothermic reactions taking place during nucleation. General insights into colloidal inorganic nanocrystal formation are discussed. Second, a non-injection based synthesis for CdS/ZnS core/shell nanocrystals is used to make high quality semiconductor particles which are intentionally doped with Cu or Ag ions. The Ag ions effect on the optical properties of the CdS/ZnS nanocrystals is investigated. The absorption and fluorescence of the samples is measured as a function of time and temperature. Proposed mechanisms for the observations are given and thoroughly discussed. Comparisons between previous results for Cu doped CdS/ZnS nanocrystals are also made to further understand how doping of semiconductor

Radical Initiated Hydrosilylation on Silicon Nanocrystal Surfaces: An Evaluation of Functional Group Tolerance and Mechanistic Study.

PubMed

Yang, Zhenyu; Gonzalez, Christina M; Purkait, Tapas K; Iqbal, Muhammad; Meldrum, Al; Veinot, Jonathan G C

2015-09-29

Hydrosilylation is among the most common methods used for modifying silicon surface chemistry. It provides a wide range of surface functionalities and effective passivation of surface sites. Herein, we report a systematic study of radical initiated hydrosilylation of silicon nanocrystal (SiNC) surfaces using two common radical initiators (i.e., 2,2'-azobis(2-methylpropionitrile) and benzoyl peroxide). Compared to other widely applied hydrosilylation methods (e.g., thermal, photochemical, and catalytic), the radical initiator based approach is particle size independent, requires comparatively low reaction temperatures, and yields monolayer surface passivation after short reaction times. The effects of differing functional groups (i.e., alkene, alkyne, carboxylic acid, and ester) on the radical initiated hydrosilylation are also explored. The results indicate functionalization occurs and results in the formation of monolayer passivated surfaces.

Synthesis of ligand-stabilized metal oxide nanocrystals and epitaxial core/shell nanocrystals via a lower-temperature esterification process.

PubMed

Ito, Daisuke; Yokoyama, Shun; Zaikova, Tatiana; Masuko, Keiichiro; Hutchison, James E

2014-01-28

The properties of metal oxide nanocrystals can be tuned by incorporating mixtures of matrix metal elements, adding metal ion dopants, or constructing core/shell structures. However, high-temperature conditions required to synthesize these nanocrystals make it difficult to achieve the desired compositions, doping levels, and structural control. We present a lower temperature synthesis of ligand-stabilized metal oxide nanocrystals that produces crystalline, monodisperse nanocrystals at temperatures well below the thermal decomposition point of the precursors. Slow injection (0.2 mL/min) of an oleic acid solution of the metal oleate complex into an oleyl alcohol solvent at 230 °C results in a rapid esterification reaction and the production of metal oxide nanocrystals. The approach produces high yields of crystalline, monodisperse metal oxide nanoparticles containing manganese, iron, cobalt, zinc, and indium within 20 min. Synthesis of tin-doped indium oxide (ITO) can be accomplished with good control of the tin doping levels. Finally, the method makes it possible to perform epitaxial growth of shells onto nanocrystal cores to produce core/shell nanocrystals.

High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures.

PubMed

Liu, Yuan; Sheng, Jiming; Wu, Hao; He, Qiyuan; Cheng, Hung-Chieh; Shakir, Muhammad Imran; Huang, Yu; Duan, Xiangfeng

2016-06-01

Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Study on Silicon Microstructure Processing Technology Based on Porous Silicon

NASA Astrophysics Data System (ADS)

Shang, Yingqi; Zhang, Linchao; Qi, Hong; Wu, Yalin; Zhang, Yan; Chen, Jing

2018-03-01

Aiming at the heterogeneity of micro - sealed cavity in silicon microstructure processing technology, the technique of preparing micro - sealed cavity of porous silicon is proposed. The effects of different solutions, different substrate doping concentrations, different current densities, and different etching times on the rate, porosity, thickness and morphology of the prepared porous silicon were studied. The porous silicon was prepared by different process parameters and the prepared porous silicon was tested and analyzed. For the test results, optimize the process parameters and experiments. The experimental results show that the porous silicon can be controlled by optimizing the parameters of the etching solution and the doping concentration of the substrate, and the preparation of porous silicon with different porosity can be realized by different doping concentration, so as to realize the preparation of silicon micro-sealed cavity, to solve the sensor sensitive micro-sealed cavity structure heterogeneous problem, greatly increasing the application of the sensor.

Bottom-up Fabrication of Graphene on Silicon/Silica Substrate via a Facile Soft-hard Template Approach

PubMed Central

Yang, Yuxing; Liu, Ruili; Wu, Jiayang; Jiang, Xinhong; Cao, Pan; Hu, Xiaofeng; Pan, Ting; Qiu, Ciyuan; Yang, Junyi; Song, Yinglin; Wu, Dongqing; Su, Yikai

2015-01-01

In this work, a novel soft-hard template method towards the direct fabrication of graphene films on silicon/silica substrate is developed via a tri-constituent self-assembly route. Using cetyl trimethyl ammonium bromide (CTAB) as a soft template, silica (SiO2) from tetramethoxysilane as a hard template, and pyrene as a carbon source, the self-assembly process allows the formation of a sandwich-like SiO2/CTAB/pyrene composite, which can be further converted to high quantity graphene films with a thickness of ~1 nm and a size of over 5 μm by thermal treatment. The morphology and thickness of the graphene films can be effectively controlled through the adjustment of the ratio of pyrene to CTAB. Furthermore, a high nonlinear refractive index n2 of ~10−12 m2 W−1 is measured from graphene/silica hybrid film, which is six orders of magnitude larger than that of silicon and comparable to the graphene from chemical vapor deposition process. PMID:26311022

Effect of heavy doping on the optical spectra of silicon

NASA Astrophysics Data System (ADS)

Chen, Chen-jia; A, Borghesi; G, Guizzetti; L, Nosenzo; E, Reguzzoni; A, Stella

1985-07-01

In this paper reflectance (R) and thermoreflectance (TR) spectra in heavily doped silicon concerning both interband and intraband transitions are reported and discussed. The heavily doped sample shows a red-shift and lifetime broadening in the two singularities E1(similar 3.4eV) and E2(similar 4.5eV). The values of the scattering time τ extracted from the reflectivity fit are obtained and compared with those obtained from Hall mobility measurements.

High power operation of cladding pumped holmium-doped silica fibre lasers.

PubMed

Hemming, Alexander; Bennetts, Shayne; Simakov, Nikita; Davidson, Alan; Haub, John; Carter, Adrian

2013-02-25

We report the highest power operation of a resonantly cladding-pumped, holmium-doped silica fibre laser. The cladding pumped all-glass fibre utilises a fluorine doped glass layer to provide low loss cladding guidance of the 1.95 µm pump radiation. The operation of both single mode and large-mode area fibre lasers was demonstrated, with up to 140 W of output power achieved. A slope efficiency of 59% versus launched pump power was demonstrated. The free running emission was measured to be 2.12-2.15 µm demonstrating the potential of this architecture to address the long wavelength operation of silica based fibre lasers with high efficiency.

Understanding the infrared to visible upconversion luminescence properties of Er{sup 3+}/Yb{sup 3+} co-doped BaMoO{sub 4} nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Adhikari, Rajesh; Choi, Jinhyuk; Narro-García, R.

2014-08-15

In this paper we report the infrared to visible upconversion luminescence properties of Er{sup 3+}/Yb{sup 3+} co-doped BaMoO{sub 4} nanocrystals synthesized via microwave assisted sol–gel processing route. Structural, morphological and upconversion luminescence properties were investigated by X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), UV–vis diffuse reflectance spectroscopy (UV–vis DRS) and Upconversion Photoluminescence spectra analysis. Results revealed that the oval shaped BaMoO{sub 4} nanocrystals ranging in size from 40 to 60 nm having tetragonal scheelite crystal structure were obtained by sol–gel route. The infrared to visible upconversion luminescence has been investigated in Er{sup 3+}/Yb{sup 3+} co-doped in BaMoO{sub 4}with different Yb{supmore » 3+} concentrations. Intense green upconversion emissions around 528, 550 nm, and red emission at 657 nm corresponding to the {sup 2}H{sub 11/2}, {sup 4}S{sub 3/2}, and {sup 4}F{sub 9/2} transitions, respectively to the {sup 4}I{sub 15/2} ground state were observed when excited by CW laser radiation at 980 nm. The green emissions were greatly enhanced after the addition of sensitizer (Yb{sup 3+} ions). The effect of Yb{sup 3+} on the upconversion luminescence intensity was analyzed and explained in terms of the energy transfer process based. The reported work establishes the understanding of molybdates as an alternative host material for upconversion luminescence. - Graphical abstract: Infrared to visible upconversion luminescence of Er{sup 3+}/Yb{sup 3+} co-doped BaMoO{sub 4} nanocrystals. - Highlights: • Nanocrystals were synthesized by microwave assisted sol–gel processing route. • Strong green emissions were observed in Er{sup 3+}/Yb{sup 3+} co-doped BaMoO{sub 4} nanocrystals. • Provides an insight on Upconversion luminescence properties of oxides host materials.« less

Silica nanoparticles on front glass for efficiency enhancement in superstrate-type amorphous silicon solar cells

NASA Astrophysics Data System (ADS)

Das, Sonali; Banerjee, Chandan; Kundu, Avra; Dey, Prasenjit; Saha, Hiranmay; Datta, Swapan K.

2013-10-01

Antireflective coating on front glass of superstrate-type single junction amorphous silicon solar cells (SCs) has been applied using highly monodispersed and stable silica nanoparticles (NPs). The silica NPs having 300 nm diameter were synthesized by Stober technique where the size of the NPs was controlled by varying the alcohol medium. The synthesized silica NPs were analysed by dynamic light scattering technique and Fourier transform infrared spectroscopy. The NPs were spin coated on glass side of fluorinated tin oxide (SnO2: F) coated glass superstrate and optimization of the concentration of the colloidal solution, spin speed and number of coated layers was done to achieve minimum reflection characteristics. An estimation of the distribution of the NPs for different optimization parameters has been done using field-emission scanning electron microscopy. Subsequently, the transparent conducting oxide coated glass with the layer having the minimum reflectance is used for fabrication of amorphous silicon SC. Electrical analysis of the fabricated cell indicates an improvement of 6.5% in short-circuit current density from a reference of 12.40 mA cm-2 while the open circuit voltage and the fill factor remains unaltered. A realistic optical model has also been proposed to gain an insight into the system.

Phosphate-core silica-clad Er/Yb-doped optical fiber and cladding pumped laser.

PubMed

Egorova, O N; Semjonov, S L; Velmiskin, V V; Yatsenko, Yu P; Sverchkov, S E; Galagan, B I; Denker, B I; Dianov, E M

2014-04-07

We present a composite optical fiber with a Er/Yb co-doped phosphate-glass core in a silica glass cladding as well as cladding pumped laser. The fabrication process, optical properties, and lasing parameters are described. The slope efficiency under 980 nm cladding pumping reached 39% with respect to the absorbed pump power and 28% with respect to the coupled pump power. Due to high doping level of the phosphate core optimal length was several times shorter than that of silica core fibers.

Heavy doping effects in high efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Neugroschel, A.

1986-01-01

The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

Effect of ammonia and methane adsorption on the electronic structure of undoped and Fe-doped 2D silica: a first-principles calculation

NASA Astrophysics Data System (ADS)

Chibisov, A. N.; Chibisova, M. A.

2018-05-01

Two-dimensional silicon oxide (2D SiO2) is a unique surface phase with interesting optical, structural and electronic properties. In this study, important novel results on the effect of Fe on the structural and electronic properties of 2D SiO2 during adsorption of CH4 and NH3 molecules are presented. Density functional theory calculations are used to investigate the interaction of CH4 and NH3 molecules with silica. The electronic structure and molecules adsorption energy are studied in detail for undoped and Fe-doped surfaces. The results show that adsorption of CH4 and NH3 molecules on the surface decreases the spin polarization of Fe/SiO2. The results are relevant to understanding the adsorption physics of 2D SiO2 for practical usage in modern nanoelectronic sensors for nanotechnology and optoelectronics.

Spin-on doping of germanium-on-insulator wafers for monolithic light sources on silicon

NASA Astrophysics Data System (ADS)

Al-Attili, Abdelrahman Z.; Kako, Satoshi; Husain, Muhammad K.; Gardes, Frederic Y.; Arimoto, Hideo; Higashitarumizu, Naoki; Iwamoto, Satoshi; Arakawa, Yasuhiko; Ishikawa, Yasuhiko; Saito, Shinichi

2015-05-01

High electron doping of germanium (Ge) is considered to be an important process to convert Ge into an optical gain material and realize a monolithic light source integrated on a silicon chip. Spin-on doping is a method that offers the potential to achieve high doping concentrations without affecting crystalline qualities over other methods such as ion implantation and in-situ doping during material growth. However, a standard spin-on doping recipe satisfying these requirements is not yet available. In this paper we examine spin-on doping of Ge-on-insulator (GOI) wafers. Several issues were identified during the spin-on doping process and specifically the adhesion between Ge and the oxide, surface oxidation during activation, and the stress created in the layers due to annealing. In order to mitigate these problems, Ge disks were first patterned by dry etching followed by spin-on doping. Even by using this method to reduce the stress, local peeling of Ge could still be identified by optical microscope imaging. Nevertheless, most of the Ge disks remained after the removal of the glass. According to the Raman data, we could not identify broadening of the lineshape which shows a good crystalline quality, while the stress is slightly relaxed. We also determined the linear increase of the photoluminescence intensity by increasing the optical pumping power for the doped sample, which implies a direct population and recombination at the gamma valley.

Origins of conductivity improvement in fluoride-enhanced silicon doping of ZnO films.

PubMed

Rashidi, Nazanin; Vai, Alex T; Kuznetsov, Vladimir L; Dilworth, Jonathan R; Edwards, Peter P

2015-06-07

Fluoride in spray pyrolysis precursor solutions for silicon-doped zinc oxide (SiZO) transparent conductor thin films significantly improves their electrical conductivity by enhancing silicon doping efficiency and not, as previously assumed, by fluoride doping. Containing only earth-abundant elements, SiZO thus prepared rivals the best solution-processed indium-doped ZnO in performance.

Effect of thermal annealing on the structure and magnetism of Fe-doped ZnO nanocrystals synthesized by solid state reaction

NASA Astrophysics Data System (ADS)

Wang, Dong; Chen, Z. Q.; Wang, D. D.; Gong, J.; Cao, C. Y.; Tang, Z.; Huang, L. R.

2010-11-01

High purity Fe 2O 3/ZnO nanocomposites were annealed in air at different temperatures between 100 and 1200 °C to get Fe-doped ZnO nanocrystals. The structure and grain size of the Fe 2O 3/ZnO nanocomposites were investigated by X-ray diffraction 2θ scans. Annealing induces an increase of the grain size from 25 to 195 nm and appearance of franklinite phase of ZnFe 2O 4. Positron annihilation measurements reveal large number of vacancy defects in the interface region of the Fe 2O 3/ZnO nanocomposites, and they are gradually recovered with increasing annealing temperature. After annealing at temperatures higher than 1000 °C, the number of vacancies decreases to the lower detection limit of positrons. Room temperature ferromagnetism can be observed in Fe-doped ZnO nanocrystals using physical properties measurement system. The ferromagnetism remains after annealing up to 1000 °C, suggesting that it is not related with the interfacial defects.

Crystallization and doping of amorphous silicon on low temperature plastic

DOEpatents

Kaschmitter, James L.; Truher, Joel B.; Weiner, Kurt H.; Sigmon, Thomas W.

1994-01-01

A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900.degree. C.), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180.degree. C. for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180.degree. C.) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide.

Crystallization and doping of amorphous silicon on low temperature plastic

DOEpatents

Kaschmitter, J.L.; Truher, J.B.; Weiner, K.H.; Sigmon, T.W.

1994-09-13

A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate is disclosed. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900 C), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180 C for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180 C) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide. 5 figs.

Quantum confinement of nanocrystals within amorphous matrices

NASA Astrophysics Data System (ADS)

Lusk, Mark T.; Collins, Reuben T.; Nourbakhsh, Zahra; Akbarzadeh, Hadi

2014-02-01

Nanocrystals encapsulated within an amorphous matrix are computationally analyzed to quantify the degree to which the matrix modifies the nature of their quantum-confinement power—i.e., the relationship between nanocrystal size and the gap between valence- and conduction-band edges. A special geometry allows exactly the same amorphous matrix to be applied to nanocrystals of increasing size to precisely quantify changes in confinement without the noise typically associated with encapsulating structures that are different for each nanocrystal. The results both explain and quantify the degree to which amorphous matrices redshift the character of quantum confinement. The character of this confinement depends on both the type of encapsulating material and the separation distance between the nanocrystals within it. Surprisingly, the analysis also identifies a critical nanocrystal threshold below which quantum confinement is not possible—a feature unique to amorphous encapsulation. Although applied to silicon nanocrystals within an amorphous silicon matrix, the methodology can be used to accurately analyze the confinement softening of other amorphous systems as well.

Effect of chromia doping of thermal stability of silica fibers

NASA Technical Reports Server (NTRS)

Zaplatynsky, I.

1974-01-01

Commercial silica fibers of the type being evaluated for reusable surface insulation for reentry vehicles were found to be porous and composed of subfibers. The effect on shrinkage and devitrification of soaking such silica fibers in water, acetic acid, chromium acetate, and chromium nitrate solutions was studied. Felted specimens made of chromia-doped fibers shrunk only about one-half as much as those made of untreated fibers after exposure in air for 4 hours at 1300 C. The devitrification rate of fibers given prolonged soaks in chromium nitrate was as low as that of as-received fibers.

Chromium doped nano-phase separated yttria-alumina-silica glass based optical fiber preform: fabrication and characterization

NASA Astrophysics Data System (ADS)

Dutta, Debjit; Dhar, Anirban; Das, Shyamal; Bysakh, Sandip; Kir'yanov, Alexandar; Paul, Mukul Chandra

2015-06-01

Transition metal (TM) doping in silica core optical fiber is one of the research area which has been studied for long time and Chromium (Cr) doping specially attracts a lot of research interest due to their broad emission band covering U, C and L band with many potential application such as saturable absorber or broadband amplifier etc. This paper present fabrication of Cr doped nano-phase separated silica fiber within yttria-alumina-silica core glass through conventional Modified Chemical Vapor Deposition (MCVD) process coupled with solution doping technique along with different material and optical characterization. For the first time scanning electron microscope (SEM) / energy dispersive X-ray (EDX) analysis of porous soot sample and final preform has been utilized to investigate incorporation mechanism of Crions with special emphasis on Cr-species evaporation at different stages of fabrication. We also report that optimized annealing condition of our fabricated preform exhibited enhanced fluorescence emission and a broad band within 550- 800 nm wavelength region under pumping at 532 nm wavelength due to nano-phase restructuration.

Facile and generalized encapsulations of inorganic nanocrystals with nitrogen-doped carbonaceous coating for multifunctionality

NASA Astrophysics Data System (ADS)

Yang, Yong; Zhang, Jingchao; Wang, Shitong; Xu, Xiaobin; Zhang, Zhicheng; Wang, Pengpeng; Tang, Zilong; Wang, Xun

2015-02-01

A simple strategy toward versatile encapsulations of inorganic nanocrystals, through a green hydrothermal treatment of commercial polyurethane sponge, was developed. This approach enables us to realize a general method to form a surface-adherent, N-doped coating with a controllable thickness for well-defined structures. These composites exhibit active properties in optical applications and energy storage. For example, N-doped carbon encapsulated Fe2O3 nanoboxes show a very high discharge capacity and outstanding cyclability, and the capacity still remained at 1086 mA h g-1 at a current density of 400 mA g-1 after 200 cycles. Our results described here provide a simple surface coating technique to design various functional nanostructures.A simple strategy toward versatile encapsulations of inorganic nanocrystals, through a green hydrothermal treatment of commercial polyurethane sponge, was developed. This approach enables us to realize a general method to form a surface-adherent, N-doped coating with a controllable thickness for well-defined structures. These composites exhibit active properties in optical applications and energy storage. For example, N-doped carbon encapsulated Fe2O3 nanoboxes show a very high discharge capacity and outstanding cyclability, and the capacity still remained at 1086 mA h g-1 at a current density of 400 mA g-1 after 200 cycles. Our results described here provide a simple surface coating technique to design various functional nanostructures. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr07181f

Measurement of steady-state minority-carrier transport parameters in heavily doped n-type silicon

NASA Technical Reports Server (NTRS)

Del Alamo, Jesus A.; Swanson, Richard M.

1987-01-01

The relevant hole transport and recombination parameters in heavily doped n-type silicon under steady state are the hole diffusion length and the product of the hole diffusion coefficient times the hole equilibrium concentration. These parameters have measured in phosphorus-doped silicon grown by epitaxy throughout nearly two orders of magnitude of doping level. Both parameters are found to be strong functions of donor concentration. The equilibrium hole concentration can be deduced from the measurement. A rigid shrinkage of the forbidden gap appears as the dominant heavy doping mechanism in phosphorus-doped silicon.

Doping Lanthanide into Perovskite Nanocrystals: Highly Improved and Expanded Optical Properties.

PubMed

Pan, Gencai; Bai, Xue; Yang, Dongwen; Chen, Xu; Jing, Pengtao; Qu, Songnan; Zhang, Lijun; Zhou, Donglei; Zhu, Jinyang; Xu, Wen; Dong, Biao; Song, Hongwei

2017-12-13

Cesium lead halide (CsPbX 3 ) perovskite nanocrystals (NCs) have demonstrated extremely excellent optical properties and great application potentials in various optoelectronic devices. However, because of the anion exchange, it is difficult to achieve white-light and multicolor emission for practical applications. Herein, we present the successful doping of various lanthanide ions (Ce 3+ , Sm 3+ , Eu 3+ , Tb 3+ , Dy 3+ , Er 3+ , and Yb 3+ ) into the lattices of CsPbCl 3 perovskite NCs through a modified hot-injection method. For the lanthanide ions doped perovskite NCs, high photoluminescence quantum yield (QY) and stable and widely tunable multicolor emissions spanning from visible to near-infrared (NIR) regions are successfully obtained. This work indicates that the doped perovskite NCs will inherit most of the unique optical properties of lanthanide ions and deliver them to the perovskite NC host, thus endowing the family of perovskite materials with excellent optical, electric, or magnetic properties.

Goat anti-rabbit IgG conjugated fluorescent dye-doped silica nanoparticles for human breast carcinoma cell recognition.

PubMed

Chen, Min-Yan; Chen, Ze-Zhong; Wu, Ling-Ling; Tang, Hong-Wu; Pang, Dai-Wen

2013-11-12

We report an indirect method for cancer cell recognition using photostable fluorescent silica nanoprobes as biological labels. The dye-doped fluorescent silica nanoparticles were synthesized using the water-in-oil (W/O) reverse microemulsion method. The silica matrix was produced by the controlled hydrolysis of tetraethylorthosilicate (TEOS) in water nanodroplets with the initiation of ammonia (NH3·H2O). Fluorescein isothiocyanate (FITC) or rhodamine B isothiocyanate conjugated with dextran (RBITC-Dextran) was doped in silica nanoparticles (NPs) with a size of 60 ± 5 nm as a fluorescent signal element by covalent bonding and steric hindrance, respectively. The secondary antibody, goat anti-rabbit IgG, was conjugated on the surface of the PEG-terminated modified FITC-doped or RBITC-Dextran-doped silica nanoparticles (PFSiNPs or PBSiNPs) by covalent binding to the PEG linkers using the cyanogen bromide method. The concentrations of goat anti-rabbit IgG covering the nanoprobes were quantified via the Bradford method. In the proof-of-concept experiment, an epithelial cell adhesion molecule (EpCAM) on the human breast cancer SK-Br-3 cell surface was used as the tumor marker, and the nanoparticle functionalized with rabbit anti-EpCAM antibody was employed as the nanoprobe for cancer cell recognition. Compared with fluorescent dye labeled IgG (FITC-IgG and RBITC-IgG), the designed nanoprobes display dramatically increased stability of fluorescence as well as photostability under continuous irradiation.

In vivo magnetic resonance and fluorescence dual imaging of tumor sites by using dye-doped silica-coated iron oxide nanoparticles

NASA Astrophysics Data System (ADS)

Jang, Haeyun; Lee, Chaedong; Nam, Gi-Eun; Quan, Bo; Choi, Hyuck Jae; Yoo, Jung Sun; Piao, Yuanzhe

2016-02-01

The difficulty in delineating tumor is a major obstacle for better outcomes in cancer treatment of patients. The use of single-imaging modality is often limited by inadequate sensitivity and resolution. Here, we present the synthesis and the use of monodisperse iron oxide nanoparticles coated with fluorescent silica nano-shells for fluorescence and magnetic resonance dual imaging of tumor. The as-synthesized core-shell nanoparticles were designed to improve the accuracy of diagnosis via simultaneous tumor imaging with dual imaging modalities by a single injection of contrast agent. The iron oxide nanocrystals ( 11 nm) were coated with Rhodamine B isothiocyanate-doped silica shells via reverse microemulsion method. Then, the core-shell nanoparticles ( 54 nm) were analyzed to confirm their size distribution by transmission electron microscopy and dynamic laser scattering. Photoluminescence spectroscopy was used to characterize the fluorescent property of the dye-doped silica shell-coated nanoparticles. The cellular compatibility of the as-prepared nanoparticles was confirmed by a trypan blue dye exclusion assay and the potential as a dual-imaging contrast agent was verified by in vivo fluorescence and magnetic resonance imaging. The experimental results show that the uniform-sized core-shell nanoparticles are highly water dispersible and the cellular toxicity of the nanoparticles is negligible. In vivo fluorescence imaging demonstrates the capability of the developed nanoparticles to selectively target tumors by the enhanced permeability and retention effects and ex vivo tissue analysis was corroborated this. Through in vitro phantom test, the core/shell nanoparticles showed a T2 relaxation time comparable to Feridex® with smaller size, indicating that the as-made nanoparticles are suitable for imaging tumor. This new dual-modality-nanoparticle approach has promised for enabling more accurate tumor imaging.

The upconversion luminescence and magnetism in Yb3+/Ho3+ co-doped LaF3 nanocrystals for potential bimodal imaging

NASA Astrophysics Data System (ADS)

Syamchand, Sasidharanpillai S.; George, Sony

2016-12-01

Biocompatible upconversion nanoparticles with multifunctional properties can serve as potential nanoprobes for multimodal imaging. Herein, we report an upconversion nanocrystal based on lanthanum fluoride which is developed to address the imaging modalities, upconversion luminescence imaging and magnetic resonance imaging (MRI). Lanthanide ions (Yb3+ and Ho3+) doped LaF3 nanocrystals (LaF3 Yb3+/Ho3+) are fabricated through a rapid microwave-assisted synthesis. The hexagonal phase LaF3 nanocrystals exhibit nearly spherical morphology with average diameter of 9.8 nm. The inductively coupled plasma mass spectrometry (ICP-MS) analysis estimated the doping concentration of Yb3+ and Ho3+ as 3.99 and 0.41%, respectively. The nanocrystals show upconversion luminescence when irradiated with near-infrared (NIR) photons of wavelength 980 nm. The emission spectrum consists of bands centred at 542, 645 and 658 nm. The stronger green emission at 542 nm and the weak red emissions at 645 and 658 nm are assigned to 5S2 → 5I8 and 5F5 → 5I8 transitions of Ho3+, respectively. The pump power dependence of luminescence intensity confirmed the two-photon upconversion process. The nanocrystals exhibit paramagnetism due to the presence of lanthanide ion dopant Ho3+ and the magnetization is 19.81 emu/g at room temperature. The nanocrystals exhibit a longitudinal relaxivity ( r 1) of 0.12 s-1 mM-1 and transverse relaxivity ( r 2) of 28.18 s-1 mM-1, which makes the system suitable for developing T2 MRI contrast agents based on holmium. The LaF3 Yb3+/Ho3+ nanocrystals are surface modified by PEGylation to improve biocompatibility and enhance further functionalisation. The PEGylated nanocrystals are found to be non-toxic up to 50 μg/mL for 48 h of incubation, which is confirmed by the MTT assay as well as morphological studies in HeLa cells. The upconversion luminescence and magnetism together with biocompatibility enables the adaptability of the present system as a nanoprobe for potential

Ultra-small dye-doped silica nanoparticles via modified sol-gel technique.

PubMed

Riccò, R; Nizzero, S; Penna, E; Meneghello, A; Cretaio, E; Enrichi, F

2018-01-01

In modern biosensing and imaging, fluorescence-based methods constitute the most diffused approach to achieve optimal detection of analytes, both in solution and on the single-particle level. Despite the huge progresses made in recent decades in the development of plasmonic biosensors and label-free sensing techniques, fluorescent molecules remain the most commonly used contrast agents to date for commercial imaging and detection methods. However, they exhibit low stability, can be difficult to functionalise, and often result in a low signal-to-noise ratio. Thus, embedding fluorescent probes into robust and bio-compatible materials, such as silica nanoparticles, can substantially enhance the detection limit and dramatically increase the sensitivity. In this work, ultra-small fluorescent silica nanoparticles (NPs) for optical biosensing applications were doped with a fluorescent dye, using simple water-based sol-gel approaches based on the classical Stöber procedure. By systematically modulating reaction parameters, controllable size tuning of particle diameters as low as 10 nm was achieved. Particles morphology and optical response were evaluated showing a possible single-molecule behaviour, without employing microemulsion methods to achieve similar results. Graphical abstractWe report a simple, cheap, reliable protocol for the synthesis and systematic tuning of ultra-small (< 10 nm) dye-doped luminescent silica nanoparticles.

Heterogeneous reduction of carbon dioxide by hydride-terminated silicon nanocrystals

PubMed Central

Sun, Wei; Qian, Chenxi; He, Le; Ghuman, Kulbir Kaur; Wong, Annabelle P. Y.; Jia, Jia; Jelle, Abdinoor A.; O'Brien, Paul G.; Reyes, Laura M.; Wood, Thomas E.; Helmy, Amr S.; Mims, Charles A.; Singh, Chandra Veer; Ozin, Geoffrey A.

2016-01-01

Silicon constitutes 28% of the earth's mass. Its high abundance, lack of toxicity and low cost coupled with its electrical and optical properties, make silicon unique among the semiconductors for converting sunlight into electricity. In the quest for semiconductors that can make chemicals and fuels from sunlight and carbon dioxide, unfortunately the best performers are invariably made from rare and expensive elements. Here we report the observation that hydride-terminated silicon nanocrystals with average diameter 3.5 nm, denoted ncSi:H, can function as a single component heterogeneous reducing agent for converting gaseous carbon dioxide selectively to carbon monoxide, at a rate of hundreds of μmol h−1 g−1. The large surface area, broadband visible to near infrared light harvesting and reducing power of SiH surface sites of ncSi:H, together play key roles in this conversion. Making use of the reducing power of nanostructured hydrides towards gaseous carbon dioxide is a conceptually distinct and commercially interesting strategy for making fuels directly from sunlight. PMID:27550234

Interaction of polymer-coated silicon nanocrystals with lipid bilayers and surfactant interfaces

NASA Astrophysics Data System (ADS)

Elbaradei, Ahmed; Brown, Samuel L.; Miller, Joseph B.; May, Sylvio; Hobbie, Erik K.

2016-10-01

We use photoluminescence (PL) microscopy to measure the interaction between polyethylene-glycol-coated (PEGylated) silicon nanocrystals (SiNCs) and two model surfaces: lipid bilayers and surfactant interfaces. By characterizing the photostability, transport, and size-dependent emission of the PEGylated nanocrystal clusters, we demonstrate the retention of red PL suitable for detection and tracking with minimal blueshift after a year in an aqueous environment. The predominant interaction measured for both interfaces is short-range repulsion, consistent with the ideal behavior anticipated for PEGylated phospholipid coatings. However, we also observe unanticipated attractive behavior in a small number of scenarios for both interfaces. We attribute this anomaly to defective PEG coverage on a subset of the clusters, suggesting a possible strategy for enhancing cellular uptake by controlling the homogeneity of the PEG corona. In both scenarios, the shape of the apparent potential is modeled through the free or bound diffusion of the clusters near the confining interface.

Doping of silicon by carbon during laser ablation process

NASA Astrophysics Data System (ADS)

Raciukaitis, G.; Brikas, M.; Kazlauskiene, V.; Miskinis, J.

2007-04-01

Effect of laser ablation on properties of remaining material was investigated in silicon. It was established that laser cutting of wafers in air induced doping of silicon by carbon. The effect was found to be more distinct by the use of higher laser power or UV radiation. Carbon ions created bonds with silicon in the depth of silicon. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion was performed to clarify its depth profile in silicon. Photo-chemical reactions of such type changed the structure of material and could be a reason for the reduced quality of machining. A controlled atmosphere was applied to prevent carbonization of silicon during laser cutting.

Investigation of magnetism in aluminum-doped silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Behzad, Somayeh; Chegel, Raad

2013-11-01

The effect of aluminum doping on the structural, electronic and magnetic properties of (8,0) silicon carbide nanotube (SiCNT) is investigated using spin-polarized density functional theory. It is found from the calculation of the formation energies that aluminum substitution for silicon atom is preferred. Our results show that the magnetization depends on the substitutional site, aluminum substitution at silicon site does not introduce any spin-polarization, whereas the aluminum substitution for carbon atom yields a spin polarized, almost dispersionless π band within the original band gap.

Synthesis and Microstructure Evolution of Nano-Titania Doped Silicon Coatings

NASA Astrophysics Data System (ADS)

Moroz, N. A.; Umapathy, H.; Mohanty, P.

2010-01-01

The Anatase phase of Titania (TiO2) in nanocrystalline form is a well known photocatalyst. Photocatalysts are commercially used to accelerate photoreactions and increase photovoltaic efficiency such as in solar cells. This study investigates the in-flight synthesis of Titania and its doping into a Silicon matrix resulting in a catalyst-dispersed coating. A liquid precursor of Titanium Isopropoxide and ethanol was coaxially fed into the plasma gun to form Titania nanoparticles, while Silicon powder was externally injected downstream. Coatings of 75-150 μm thick were deposited onto flat coupons. Further, Silicon powder was alloyed with aluminum to promote crystallization and reduce the amorphous phase in the Silicon matrix. Dense coatings containing nano-Titania particles were observed under electron microscope. X-ray diffraction showed that both the Rutile and Anatase phases of the Titania exist. The influence of process parameters and aluminum alloying on the microstructure evolution of the doped coatings is analyzed and presented.

Living Nanocrystals: Synthesis of Precisely Defined Metal Oxide Nanocrystals Through a Continuous Growth Process

NASA Astrophysics Data System (ADS)

Jansons, Adam Wayne

dopants into an oxide nanocrystal matrix at near thermodynamically allowed compositions. Additionally, precise radial dopant placement is demonstrated, which has striking implications for material properties. The radial position of tin in tin-doped indium oxide nanocrystals and the resulting differences on the localized surface plasmon resonance are discussed. Finally, future opportunities are reviewed. This dissertation includes previously published co-authored material.

Modified spontaneous emission of silicon nanocrystals embedded in artificial opals

NASA Astrophysics Data System (ADS)

Janda, Petr; Valenta, Jan; Rehspringer, Jean-Luc; Mafouana, Rodrigue R.; Linnros, Jan; Elliman, Robert G.

2007-10-01

Si nanocrystals (NCs) were embedded in synthetic silica opals by means of Si-ion implantation or opal impregnation with porous-Si suspensions. In both types of sample photoluminescence (PL) is strongly Bragg-reflection attenuated (up to 75%) at the frequency of the opal stop-band in a direction perpendicular to the (1 1 1) face of the perfect hcp opal structure. Time-resolved PL shows a rich distribution of decay rates, which contains both shorter and longer decay components compared with the ordinary stretched exponential decay of Si NCs. This effect reflects changes in the spontaneous emission rate of Si NCs due to variations in the local density of states of real opal containing defects.

Doping of silicon with carbon during laser ablation process

NASA Astrophysics Data System (ADS)

Račiukaitis, G.; Brikas, M.; Kazlauskienė, V.; Miškinis, J.

2006-12-01

The effect of laser ablation on properties of remaining material in silicon was investigated. It was found that laser cutting of wafers in the air induced the doping of silicon with carbon. The effect was more distinct when using higher laser power or UV radiation. Carbon ions created bonds with silicon atoms in the depth of the material. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion to clarify its depth profile in silicon was performed. Photochemical reactions of such type changed the structure of material and could be the reason of the reduced machining quality. The controlled atmosphere was applied to prevent carbonization of silicon during laser cutting.

Self-assembled Targeting of Cancer Cells by Iron(III)-doped, Silica Nanoparticles.

PubMed

Mitchell, K K Pohaku; Sandoval, S; Cortes-Mateos, M J; Alfaro, J G; Kummel, A C; Trogler, W C

2014-12-07

Iron(III)-doped silica nanoshells are shown to possess an in vitro cell-receptor mediated targeting functionality for endocytosis. Compared to plain silica nanoparticles, iron enriched ones are shown to be target-specific, a property that makes them potentially better vehicles for applications, such as drug delivery and tumor imaging, by making them more selective and thereby reducing the nanoparticle dose. Iron(III) in the nanoshells can interact with endogenous transferrin, a serum protein found in mammalian cell culture media, which subsequently promotes transport of the nanoshells into cells by the transferrin receptor-mediated endocytosis pathway. The enhanced uptake of the iron(III)-doped nanoshells relative to undoped silica nanoshells by a transferrin receptor-mediated pathway was established using fluorescence and confocal microscopy in an epithelial breast cancer cell line. This process was also confirmed using fluorescence activated cell sorting (FACS) measurements that show competitive blocking of nanoparticle uptake by added holo-transferrin.

Method for making defect-free zone by laser-annealing of doped silicon

DOEpatents

Narayan, Jagdish; White, Clark W.; Young, Rosa T.

1980-01-01

This invention is a method for improving the electrical properties of silicon semiconductor material. The method comprises irradiating a selected surface layer of the semiconductor material with high-power laser pulses characterized by a special combination of wavelength, energy level, and duration. The combination effects melting of the layer without degrading electrical properties, such as minority-carrier diffusion length. The method is applicable to improving the electrical properties of n- and p-type silicon which is to be doped to form an electrical junction therein. Another important application of the method is the virtually complete removal of doping-induced defects from ion-implanted or diffusion-doped silicon substrates.

Hybrid Silicon Nanocrystal/Poly(3-hexylthiophene-2,5-diyl) Solar Cells from a Chlorinated Silicon Precursor

NASA Astrophysics Data System (ADS)

Ding, Yi; Gresback, Ryan; Yamada, Riku; Okazaki, Ken; Nozaki, Tomohiro

2013-11-01

Freestanding silicon nanocrystals (Si NCs) synthesized by a nonthermal plasma from silicon tetrachloride (SiCl4) were successfully employed in hybrid Si NC/poly(3-hexylthiophene-2,5-diyl) (P3HT) bulk-hetrojunction (BHJ) solar cells. The weight fraction of Si NCs in P3HT greatly influences device performance. As the weight fraction increases up to 50 wt %, short-circuit current dramatically increases, while open-circuit voltage (Voc) and fill factor (FF) do not change significantly. The improvement in device performance is attributed to both increased probability of exciton dissociation in P3HT and an enhancement in the light conversion of wavelengths where P3HT is a poor absorber. These results demonstrate an alternative approach to synthesizing Si NCs from SiCl4 instead of silane (SiH4) for optoelectronic devices.

Fragmentation, rings and coarsening: structure and transformations of nanocrystal aggregate networks on a liquid surface

NASA Astrophysics Data System (ADS)

Yang, Bo; Scheidtmann, Jens; Mayer, Joachim; Wuttig, Matthias; Michely, Thomas

2002-01-01

Deposition of Ag on a silicon oil surface leads to the formation of nm-sized Ag crystals floating on the oil surface. These nanocrystals mutually attract each other, forming strongly branched nanocrystal aggregates and continuous aggregate networks. Transformation processes of such nanocrystal aggregate networks are imaged in situ by optical microscopy. The observations are explained on the basis of a simple model involving diffusion of nanocrystals along aggregate edges and the rupture of branches resulting from branch width fluctuations due to edge diffusion.

Direct Synthesis of Silicon Nanowires, Silica Nanospheres, Wire-Like Nanosphere Agglomerates, and Silica-Based Nanotubes and Nanofiber Arrays

DTIC Science & Technology

2001-01-01

decades, the vapor-liquid-solid (VLS) process, ’ 2 where gold particles act as a mediating solvent on a silicon substrate, forming a molten alloy, has...34Nanocatalysis: Selective Conversion of Ethanol to Acetaldehyde Using Monoatomically Dispersed Copper on Silica Nanospheres", Journal of Catalysis, submitted. 7.Sales literature, Cabot Corporation. C5.9.8 Nanoparticles in Biology

A delta-doped amorphous silicon thin-film transistor with high mobility and stability

NASA Astrophysics Data System (ADS)

Kim, Pyunghun; Lee, Kyung Min; Lee, Eui-Wan; Jo, Younjung; Kim, Do-Hyung; Kim, Hong-jae; Yang, Key Young; Son, Hyunji; Choi, Hyun Chul

2012-12-01

Ultrathin doped layers, known as delta-doped layers, were introduced within the intrinsic amorphous silicon (a-Si) active layer to fabricate hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with enhanced field-effect mobility. The performance of the delta-doped a-Si:H TFTs depended on the phosphine (PH3) flow rate and the distance from the n+ a-Si to the deltadoping layer. The delta-doped a-Si:H TFTs fabricated using a commercial manufacturing process exhibited an enhanced field-effect mobility of approximately ˜0.23 cm2/Vs (compared to a conventional a-Si:H TFT with 0.15 cm2/Vs) and a desirable stability under a bias-temperature stress test.

Highly Doped Polycrystalline Silicon Microelectrodes Reduce Noise in Neuronal Recordings In Vivo

PubMed Central

Saha, Rajarshi; Jackson, Nathan; Patel, Chetan; Muthuswamy, Jit

2013-01-01

The aims of this study are to 1) experimentally validate for the first time the nonlinear current-potential characteristics of bulk doped polycrystalline silicon in the small amplitude voltage regimes (0–200 μV) and 2) test if noise amplitudes (0–15 μV) from single neuronal electrical recordings get selectively attenuated in doped polycrystalline silicon microelectrodes due to the above property. In highly doped polycrystalline silicon, bulk resistances of several hundred kilo-ohms were experimentally measured for voltages typical of noise amplitudes and 9–10 kΩ for voltages typical of neural signal amplitudes (>150–200 μV). Acute multiunit measurements and noise measurements were made in n = 6 and n = 8 anesthetized adult rats, respectively, using polycrystalline silicon and tungsten microelectrodes. There was no significant difference in the peak-to-peak amplitudes of action potentials recorded from either microelectrode (p > 0.10). However, noise power in the recordings from tungsten microelectrodes (26.36 ± 10.13 pW) was significantly higher (p < 0.001) than the corresponding value in polycrystalline silicon microelectrodes (7.49 ± 2.66 pW). We conclude that polycrystalline silicon microelectrodes result in selective attenuation of noise power in electrical recordings compared to tungsten microelectrodes. This reduction in noise compared to tungsten microelectrodes is likely due to the exponentially higher bulk resistances offered by highly doped bulk polycrystalline silicon in the range of voltages corresponding to noise in multiunit measurements. PMID:20667815

Microscopic theory of cation exchange in CdSe nanocrystals.

PubMed

Ott, Florian D; Spiegel, Leo L; Norris, David J; Erwin, Steven C

2014-10-10

Although poorly understood, cation-exchange reactions are increasingly used to dope or transform colloidal semiconductor nanocrystals (quantum dots). We use density-functional theory and kinetic Monte Carlo simulations to develop a microscopic theory that explains structural, optical, and electronic changes observed experimentally in Ag-cation-exchanged CdSe nanocrystals. We find that Coulomb interactions, both between ionized impurities and with the polarized nanocrystal surface, play a key role in cation exchange. Our theory also resolves several experimental puzzles related to photoluminescence and electrical behavior in CdSe nanocrystals doped with Ag.

Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response

NASA Technical Reports Server (NTRS)

Hoenk, Michael E. (Inventor); Grunthaner, Paula J. (Inventor); Grunthaner, Frank J. (Inventor); Terhune, Robert W. (Inventor); Hecht, Michael H. (Inventor)

1994-01-01

The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

MUC-1 aptamer-conjugated dye-doped silica nanoparticles for MCF-7 cells detection.

PubMed

Cai, Li; Chen, Ze-Zhong; Chen, Min-Yan; Tang, Hong-Wu; Pang, Dai-Wen

2013-01-01

In this work, we have prepared three types of aptamer-conjugated Rubpy-doped silica nanoparticles for Human breast carcinoma MCF-7 cells labeling. Probe A is prepared through covalent conjugation between amine-labeled MUC-1 aptamer and carboxyl-modified Rubpy-doped NPs (NPs-aptamer). Probe B is prepared based on the interaction between biotin-labeled MUC-1 aptamer and avidin-conjugated Rubpy-doped NPs (NPs-avidin-biotin-aptamer). For Probe C, there is a PEG with flexible long chain as the bridge between avidin and the NPs (NPs-PEG-avidin-biotin-aptamer). In addition, we further investigate the practical number of MUC-1 aptamers on an NP of each probe using hoechst33258 dye. The binding efficiency of MUC-1 aptamer on the three types of probes as follows: Probe A < Probe B < Probe C. In addition, microscopic fluorescence imaging shows that Probe C containing the PEG molecules can be effectively applied for the recognition of MUC-1 protein in human breast carcinoma MCF-7 cells thus demonstrates that the PEG with flexible long chain as the bridge between the aptamer and NP can greatly enhances the freedom of MUC-1 aptamer. Compared with common organic dyes, the dye-doped silica nanoparticles serve as a stable bioprobe because of their facile conjugation with the desirable biomolecules, and have exhibited great potential in bioanalysis. Copyright © 2012 Elsevier Ltd. All rights reserved.

Synthesis and near-infrared fluorescence of K5NdLi2F10 nanocrystals and their dispersion with high doping concentration and long lifetime

NASA Astrophysics Data System (ADS)

Duan, Weikuan; Zhang, Yanyan; Wang, Zhongyue; Jiang, Jingyi; Liang, Chen; Wei, Wei

2014-05-01

K5NdLi2F10 nanocrystals were synthesized by a novel synthetic route in the liquid phase, which could improve the morphology and reduce the size effectively, for the first time. The luminescence intensities of the K5NdLi2F10 nanocrystals and their dispersion in polyethylene glycol 400 (PEG-400) approximate to that of neodymium doped phosphate glass (3 mol%), while the lifetimes of the nanocrystals alone and when dispersed with Nd3+ ions (1 × 1020 cm-3) are 303.4 μs and 174.6 μs respectively. Based on the Judd-Ofelt analysis, the emission quantum yield of the dispersion reaches 39.57%. In all, the K5NdLi2F10 nanocrystals and their dispersion have promising applications as liquid laser materials and biological fluorescent markers.K5NdLi2F10 nanocrystals were synthesized by a novel synthetic route in the liquid phase, which could improve the morphology and reduce the size effectively, for the first time. The luminescence intensities of the K5NdLi2F10 nanocrystals and their dispersion in polyethylene glycol 400 (PEG-400) approximate to that of neodymium doped phosphate glass (3 mol%), while the lifetimes of the nanocrystals alone and when dispersed with Nd3+ ions (1 × 1020 cm-3) are 303.4 μs and 174.6 μs respectively. Based on the Judd-Ofelt analysis, the emission quantum yield of the dispersion reaches 39.57%. In all, the K5NdLi2F10 nanocrystals and their dispersion have promising applications as liquid laser materials and biological fluorescent markers. Electronic supplementary information (ESI) available: Fitting curve of refractive index and detailed contents of Judd-Ofelt analysis. See DOI: 10.1039/c3nr06825k

Plasmon-enhanced energy transfer for improved upconversion of infrared radiation in doped-lanthanide nanocrystals

NASA Astrophysics Data System (ADS)

Sun, Qi; Mundoor, Haridas; Ribot, Josep; Singh, Vivek; Smalyukh, Ivan; Nagpal, Prashant

2014-03-01

Upconversion of infrared radiation into visible light has been investigated for applications in biological imaging and photovoltaics. However, low conversion efficiency due to small absorption cross-section for infrared light (Yb3+) , and slow rate of energy transfer (to Er3+ states) has prevented application of upconversion photoluminescence (UPL) for diffuse sunlight or imaging tissue samples. Here, we utilize resonant surface plasmon polaritons (SPP) waves to enhance UPL in doped-lanthanide nanocrystals. Our analysis indicates that SPP waves not only enhance the electromagnetic field, and hence weak Purcell effect, but also increases the rate of resonant energy transfer from Yb3+ to Er3+ ions by 6 fold. While we do observe strong metal mediated quenching (14 fold) of green fluorescence on flat metal surfaces, the nanostructured metal is resonant in the infrared, and hence enhances the nanocrystal UPL. This strong columbic effect on energy transfer can have important implications for other fluorescent and excitonic systems too.

Interface traps contribution on transport mechanisms under illumination in metal-oxide-semiconductor structures based on silicon nanocrystals

NASA Astrophysics Data System (ADS)

Chatbouri, S.; Troudi, M.; Kalboussi, A.; Souifi, A.

2018-02-01

The transport phenomena in metal-oxide-semiconductor (MOS) structures having silicon nanocrystals (Si-NCs) inside the dielectric layer have been investigated, in dark condition and under visible illumination. At first, using deep-level transient spectroscopy (DLTS), we find the presence of series electron traps having very close energy levels (comprised between 0.28 and 0.45 eV) for ours devices (with/without Si-NCs). And a single peak appears at low temperature only for MOS with Si-NCs related to Si-NCs DLTS response. In dark condition, the conduction mechanism is dominated by the thermionic fast emission/capture of charge carriers from the highly doped polysilicon layer to Si-substrate through interface trap states for MOS without Si-NCs. The tunneling of charge carriers from highly poly-Si to Si substrate trough the trapping/detrapping mechanism in the Si-NCs, at low temperature, contributed to the conduction mechanism for MOS with Si-NCs. The light effect on transport mechanisms has been investigated using current-voltage ( I- V), and high frequency capacitance-voltage ( C- V) methods. We have been marked the photoactive trap effect in inversion zone at room temperature in I- V characteristics, which confirm the contribution of photo-generated charge on the transport mechanisms from highly poly-Si to Si substrate trough the photo-trapping/detrapping mechanism in the Si-NCs and interfaces traps levels. These results have been confirmed by an increasing about 10 pF in capacity's values for the C- V characteristics of MOS with Si-NCs, in the inversion region for inverse high voltage applied under photoexcitation at low temperature. These results are helpful to understand the principle of charge transport in dark condition and under illumination, of MOS structures having Si-NCs in the SiO x = 1.5 oxide matrix.

Nano-electron beam induced current and hole charge dynamics through uncapped Ge nanocrystals

NASA Astrophysics Data System (ADS)

Marchand, A.; El Hdiy, A.; Troyon, M.; Amiard, G.; Ronda, A.; Berbezier, I.

2012-04-01

Dynamics of hole storage in spherical Ge nanocrystals (NCs) formed by a two step dewetting/nucleation process on an oxide layer grown on an n-doped <001> silicon substrate is studied using a nano-electron beam induced current technique. Carrier generation is produced by an electron beam irradiation. The generated current is collected by an atomic force microscope—tip in contact mode at a fixed position away from the beam spot of about 0.5 µm. This distance represents the effective diffusion length of holes. The time constants of holes charging are determined and the effect of the NC size is underlined.

Characterization of stoichiometric nanocrystalline spinel ferrites dispersed on porous silica aerogel.

PubMed

Casula, M F; Concas, G; Congiu, F; Corrias, A; Loche, D; Marras, C; Spano, G

2011-11-01

Stoichiometric magnetic nanosized ferrites MFe2O4 (M = Mn, Co, Ni) were prepared in form of nearly spherical nanocrystals supported on a highly porous silica aerogel matrix, by a sol-gel procedure. X-ray diffraction and transmission electron microscopy indicate that these materials are made out of non-agglomerated ferrite nanocrystals having size in the 5-10 nm range. Investigation by Mössbauer Spectroscopy was used to gain insights on the superparamagnetic relaxation and on the inversion degree. Magnetic ordering at room temperature varies from superparamagnetic in the NiFe2O4 sample, highly blocked (approximately 70%) in the MnFe2O4 sample and nearly fully blocked in the CoFe2O4 sample. A fitting procedure of the Mössbauer data has been used in order to resolve the spectrum into the tetrahedral and octahedral components; in this way, an inversion degree of 0.68 (very close to bulk values) was obtained for 6 nm silica-supported CoFe2O4 nanocrystals.

On the origin of emission and thermal quenching of SRSO:Er3+ films grown by ECR-PECVD

PubMed Central

2013-01-01

Silicon nanocrystals embedded in a silicon-rich silicon oxide matrix doped with Er3+ ions have been fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nanocrystals has been investigated. Temperature quenching of the photoluminescence originating from the silicon nanocrystals and the erbium ions has been observed. Activation energies of the thermally activated quenching process were estimated for different excitation wavelengths. The temperature quenching mechanism of the emission is discussed. Also, the origin of visible emission and kinetic properties of Er-related emission have been discussed in details. PMID:23433189

Silicon Isotope Fractionation by Banana Under Continuous Nutrient and Silica Flux

NASA Astrophysics Data System (ADS)

Opfergelt, S.; Cardinal, D.; Henriet, C.; Delvaux, B.; André, L.

2004-12-01

Silicon is absorbed by plants as aqueous H4SiO4 with other essential nutrients, and precipitates in aerial parts of the plant as phytolith, a biogenic opal. Phytoliths are restored to the soil by decomposition of organic debris from plant material. The role of higher plants in the biogeochemical cycle of silicon is therefore major although it is still poorly studied. Biomineralization processes are known to fractionate the three stable silicon isotopes with a preferential uptake of light isotopes. Therefore, following some preliminary results from Douthitt (1982), and studies presented in recent conferences (Ziegler et al., 2002; Ding et al., 2003), we suspect that phytolith production by plants could also fractionate the silicon isotopes. Inversely, intensity of phytolith-related isotopic fractionations might contribute to a better understanding of the soil-plant silicon cycle. Our study focused on banana, a silicon accumulating plant (>1% Si, dry weight).Musa acuminata cv Grande Naine has been grown in hydroponics under controlled conditions (light, temperature, humidity, nutrients) during six weeks. The nutrient supply was kept constant: three batches of five plants were grown with a continuous nutrient solution flow of 5, 50 and 100 ppm SiO2 respectively. Si isotopic compositions were measured in the source solution, and in silica extracted from the various parts of banana (roots, pseudostems, midribs and petioles, leaves), using a Nu Plasma multicollector mass spectrometer (MC-ICP-MS) operating in dry plasma mode. The results are expressed as δ 29Si relatively to the NBS28 standard, with an average precision of ± 0.03‰ . Silicon contents and morphological studies of phytoliths were also achieved. Banana δ 29Si varied between -0.18 and -0.76‰ with a source solution at -0.02‰ . Values of δ 29Si were less fractionated, relatively to the nutrient solution, in roots, where no phytoliths have been observed until now, than in upper parts of banana where

Nanocrystal assembly for tandem catalysis

DOEpatents

Yang, Peidong; Somorjai, Gabor; Yamada, Yusuke; Tsung, Chia-Kuang; Huang, Wenyu

2014-10-14

The present invention provides a nanocrystal tandem catalyst comprising at least two metal-metal oxide interfaces for the catalysis of sequential reactions. One embodiment utilizes a nanocrystal bilayer structure formed by assembling sub-10 nm platinum and cerium oxide nanocube monolayers on a silica substrate. The two distinct metal-metal oxide interfaces, CeO.sub.2--Pt and Pt--SiO.sub.2, can be used to catalyze two distinct sequential reactions. The CeO.sub.2--Pt interface catalyzed methanol decomposition to produce CO and H.sub.2, which were then subsequently used for ethylene hydroformylation catalyzed by the nearby Pt--SiO.sub.2 interface. Consequently, propanal was selectively produced on this nanocrystal bilayer tandem catalyst.

Cation distribution and optical properties of Cr-doped MgGa2O4 nanocrystals

NASA Astrophysics Data System (ADS)

Duan, Xiulan; Liu, Jian; Wang, Xinqiang; Jiang, Huaidong

2014-11-01

The distribution of cations in the spinel-type MgCr2yGa2-2yO4 (y = 0-0.6) nanocrystals and their optical properties as a function of annealing temperature and chromium content were investigated by using X-ray photoelectron spectroscopy (XPS) in combination with absorption spectroscopy. The cations in MgCr2yGa2-2yO4 nanocrystals are disorderly distributed with mixing of divalent and trivalent cations occupying the tetrahedral and octahedral sites. With the increase of annealing temperature, the inversion parameter (the fraction of Mg2+ ions in octahedral sites) decreases, which has the same varying tendency with the proportion of tetrahedral Ga3+ or Cr3+ ions. The inversion parameter increases with increasing Cr3+ concentration. The absorption spectra indicate that Cr3+ ions are located in the octahedral sites as well as in the tetrahedral sites. The fraction of tetrahedral Cr3+ decreases with Cr-enrichment. The optical absorption properties of Cr-doped MgGa2O4 nanocrystals may be tuned by varying the preparation temperature or Cr concentration.

Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice

NASA Astrophysics Data System (ADS)

Ming, Fangfei; Johnston, Steve; Mulugeta, Daniel; Smith, Tyler S.; Vilmercati, Paolo; Lee, Geunseop; Maier, Thomas A.; Snijders, Paul C.; Weitering, Hanno H.

2017-12-01

The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magnetoresistance, and high-temperature superconductivity in layered perovskite compounds. Advances in this field would greatly benefit from the availability of new material systems with a similar richness of physical phenomena but with fewer chemical and structural complications in comparison to oxides. Using scanning tunneling microscopy and spectroscopy, we show that such a system can be realized on a silicon platform. The adsorption of one-third monolayer of Sn atoms on a Si(111) surface produces a triangular surface lattice with half filled dangling bond orbitals. Modulation hole doping of these dangling bonds unveils clear hallmarks of Mott physics, such as spectral weight transfer and the formation of quasiparticle states at the Fermi level, well-defined Fermi contour segments, and a sharp singularity in the density of states. These observations are remarkably similar to those made in complex oxide materials, including high-temperature superconductors, but highly extraordinary within the realm of conventional s p -bonded semiconductor materials. It suggests that exotic quantum matter phases can be realized and engineered on silicon-based materials platforms.

Light induced dielectric constant of Alumina doped lead silicate glass based on silica sands

NASA Astrophysics Data System (ADS)

Diantoro, Markus; Natalia, Desi Ayu; Mufti, Nandang; Hidayat, Arif

2016-04-01

Numerous studies on glass ceramic compounds have been conducted intensively. Two major problems to be solved are to simplify the fabrication process by reducing melting temperature as well as improving various properties for various fields of technological application. To control the dielectric constant, the researchers generally use a specific dopant. So far there is no comprehensive study to control the dielectric constant driven by both of dopant and light intensity. In this study it is used Al2O3 dopant to increase the light induced dielectric constant of the glass. The source of silica was taken from local silica sands of Bancar Tuban. The sands were firstly leached using hydrochloric acid to improve the purity of silica which was investigated by means of XRF. Fabricating the glass samples were performed by using melting-glass method. Silica powder was mixed with various ratio of SiO2:Na2CO3:PbO:Al2O3. Subsequently, a mixture of various Al2O3 doped lead silicate glasses were melted at 970°C and directy continued by annealed at 300°C. The samples were investigated by XRD, FTIR, SEM-EDX and measuring dielectric constant was done using dc-capacitance meter with various light intensities. The investigation result of XRD patterns showed that the crystal structures of the samples are amorphous state. The introduction of Al2O3 does not alter the crystal structure, but significantly change the structure of the functional glass bonding PbO-SiO2 which was shown by the FTIR spectra. It was noted that some new peak peaks were exist in the doped samples. Measuring result of dielectricity shows that the dielectric constant of glass increases with the addition of Al2O3. Increasing the light intensity gives rise to increase their dielectric constant in general. A detail observation of the dielectric seen that there are discontinuous step-like of dielectric. Most likely a specific quantization mechanism occurs when glass exposed under light.

First-principles study on silicon atom doped monolayer graphene

NASA Astrophysics Data System (ADS)

Rafique, Muhammad; Shuai, Yong; Hussain, Nayyar

2018-01-01

This paper illustrates the structural, electronic and optical properties of individual silicon (Si) atom-doped single layer graphene using density functional theory method. Si atom forms tight bonding with graphene layer. The effect of doping has been investigated by varying the concentration of Si atoms from 3.125% to 9.37% (i.e. From one to three Si atoms in 4 × 4 pure graphene supercell containing 32 carbon atoms), respectively. Electronic structure, partial density of states (PDOS) and optical properties of pure and Si atom-doped graphene sheet were calculated using VASP (Vienna ab-initio Simulation Package). The calculated results for pure graphene sheet were then compared with Si atom doped graphene. It is revealed that upon Si doping in graphene, a finite band gap appears at the high symmetric K-point, thereby making graphene a direct band gap semiconductor. Moreover, the band gap value is directly proportional to the concentration of impurity Si atoms present in graphene lattice. Upon analyzing the optical properties of Si atom-doped graphene structures, it is found that, there is significant change in the refractive index of the graphene after Si atom substitution in graphene. In addition, the overall absorption spectrum of graphene is decreased after Si atom doping. Although a significant red shift in absorption is found to occur towards visible range of radiation when Si atom is substituted in its lattice. The reflectivity of graphene improves in low energy region after Si atom substitution in graphene. These results can be useful for tuning the electronic structure and to manipulate the optical properties of graphene layer in the visible region.

Quantum dot-doped silica nanoparticles as probes for targeting of T-lymphocytes.

PubMed

Bottini, Massimo; D'Annibale, Federica; Magrini, Andrea; Cerignoli, Fabio; Arimura, Yutaka; Dawson, Marcia I; Bergamaschi, Enrico; Rosato, Nicola; Bergamaschi, Antonio; Mustelin, Tomas

2007-01-01

To enhance diagnostic or therapeutic efficacy, novel nanomaterials must be engineered to function in biologically relevant environments, be visible by conventional fluorescent microscopy, and have multivalent loading capacity for easy detection or effective drug delivery. Here we report the fabrication of silica nanoparticles doped with quantum dots and superficially functionalized with amino and phosphonate groups. The amino groups were acylated with a water-soluble biotin-labeling reagent. The biotinylated nanoparticles were subsequently decorated with neutravidin by exploiting the strong affinity between neutravidin and biotin. The resultant neutravidin-decorated fluorescent silica nanoparticles stably dispersed under physiological conditions, were visible by conventional optical and confocal fluorescent microscopy, and could be further functionalized with macromolecules, nucleic acids, and polymers. We also coated the surface of the nanoparticles with biotinylated mouse anti-human CD3 (alphaCD3). The resultant fluorescent nanoassembly was taken up by Jurkat T cells through receptor-mediated endocytosis and was partially released to lysosomes. Thus, quantum dot-doped silica nanoparticles decorated with neutravidin represent a potentially excellent scaffold for constructing specific intracellular nanoprobes and transporters.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

2010-12-01

The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Switchable vanadium dioxide (VO2) metamaterials fabricated from tungsten doped vanadia-based colloidal nanocrystals

NASA Astrophysics Data System (ADS)

Paik, Taejong; Hong, Sung-Hoon; Gordon, Thomas; Gaulding, Ashley; Kagan, Cherie; Murray, Christopher

2013-03-01

We report the fabrication of thermochromic VO2-based metamaterials using solution-processable colloidal nanocrystals. Vanadium-based nanoparticles are prepared through a non-hydrolytic reaction, resulting in stable colloidal dispersions in solution. Thermochromic nanocrystalline VO2 thin-films are prepared via rapid thermal annealing of colloidal nanoparticles coated on a variety of substrates. Nanostructured VO2 can be patterned over large areas by nanoimprint lithography. Precise control of tungsten (W) doping concentration in colloidal nanoparticles enables tuning of the phase transition temperature of the nanocrystalline VO2 thin-films. W-doped VO2 films display a sharp temperature dependent phase transition, similar to the undoped VO2 film, but at lower temperatures tunable with the doping level. By sequential coating of doped VO2 with different doping concentrations, we fabricate ?smart? multi-layered VO2 films displaying multiple phase transition temperatures within a single structure, allowing for dynamic modulation of the metal-dielectric layered structure. The optical properties programmed into the layered structure are switchable with temperature, which provides additional degrees of freedom to design tunable optical metamaterials. This work is supported by the US Office of Naval Research Multidisciplinary University Research Initiative (MURI) program grant number ONR-N00014-10-1-0942.

Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier

DOEpatents

Carlson, David E.; Wronski, Christopher R.

1979-01-01

A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

Theoretical exploration of structural, electro-optical and magnetic properties of gallium-doped silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Behzad, Somayeh; Chegel, Raad; Moradian, Rostam; Shahrokhi, Masoud

2014-09-01

The effects of gallium doping on the structural, electro-optical and magnetic properties of (8,0) silicon carbide nanotube (SiCNT) are investigated by using spin-polarized density functional theory. It is found from the calculation of the formation energies that gallium substitution for silicon atom is preferred. Our results show that gallium substitution at either single carbon or silicon atom site in SiCNT could induce spontaneous magnetization. The optical studies based on dielectric function indicate that new transition peaks and a blue shift are observed after gallium doping.

Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tondini, S.; Dipartimento di Fisica, Informatica e Matematica, Università di Modena e Reggio Emilia, Via Campi 213/a, 41125 Modena; Pucker, G.

2016-09-07

The role of the inversion layer on injection and recombination phenomena in light emitting diodes (LEDs) is here studied on a multilayer (ML) structure of silicon nanocrystals (Si-NCs) embedded in SiO{sub 2}. Two Si-NC LEDs, which are similar for the active material but different in the fabrication process, elucidate the role of the non-radiative recombination rates at the ML/substrate interface. By studying current- and capacitance-voltage characteristics as well as electroluminescence spectra and time-resolved electroluminescence under pulsed and alternating bias pumping scheme in both the devices, we are able to ascribe the different experimental results to an efficient or inefficient minoritymore » carrier (electron) supply by the p-type substrate in the metal oxide semiconductor LEDs.« less

The relationship between milling a new silica-doped zirconia and its resistance to low-temperature degradation (LTD): a pilot study.

PubMed

Nakamura, Takashi; Usami, Hirofumi; Ohnishi, Hiroshi; Nishida, Hisataka; Tang, Xuehua; Wakabayashi, Kazumichi; Sekino, Tohru; Yatani, Hirofumi

2012-02-03

The aim of this study was to determine the machinability of new silica-doped Y-TZP by CAD/CAM and the resistance to low temperature degradation of the milled sample by comparing with a commercial HIP type Y-TZP material. The copings could be milled from silica-doped Y-TZP blocks without chipping, and there was no significant difference between the two types of Y-TZP materials in either the marginal or the inner gap between the abutment and the coping. After aging, the monoclinic content in the commercial Y-TZP copings increased from 25% before testing to 65%, while that of silica-doped Y-TZP copings slightly increased from 23% to 30%. The silica-doped Y-TZP copings did not have any significant difference in fracture load in a comparison between the control group and the aging group, while the commercial Y-TZP copings had a significantly lower fracture load for the aging group than for the control group.

Performance of conversion efficiency of a crystalline silicon solar cell with base doping density

NASA Astrophysics Data System (ADS)

Sahin, Gokhan; Kerimli, Genber; Barro, Fabe Idrissa; Sane, Moustapha; Alma, Mehmet Hakkı

In this study, we investigate theoretically the electrical parameters of a crystalline silicon solar cell in steady state. Based on a one-dimensional modeling of the cell, the short circuit current density, the open circuit voltage, the shunt and series resistances and the conversion efficiency are calculated, taking into account the base doping density. Either the I-V characteristic, series resistance, shunt resistance and conversion efficiency are determined and studied versus base doping density. The effects applied of base doping density on these parameters have been studied. The aim of this work is to show how short circuit current density, open circuit voltage and parasitic resistances are related to the base doping density and to exhibit the role played by those parasitic resistances on the conversion efficiency of the crystalline silicon solar.

Heavily doped n-type PbSe and PbS nanocrystals using ground-state charge transfer from cobaltocene

DOE PAGES

Koh, Weon-kyu; Koposov, Alexey Y.; Stewart, John T.; ...

2013-06-18

Colloidal nanocrystals (NCs) of lead chalcogenides are a promising class of tunable infrared materials for applications in devices such as photodetectors and solar cells. Such devices typically employ electronic materials in which charge carrier concentrations are manipulated through “doping;” however, persistent electronic doping of these NCs remains a challenge. In this paper, we demonstrate that heavily doped n-type PbSe and PbS NCs can be realized utilizing ground-state electron transfer from cobaltocene. This allows injecting up to eight electrons per NC into the band-edge state and maintaining the doping level for at least a month at room temperature. Doping is confirmedmore » by inter- and intra-band optical absorption, as well as by carrier dynamics. In conclusion, FET measurements of doped NC films and the demonstration of a p-n diode provide additional evidence that the developed doping procedure allows for persistent incorporation of electrons into the quantum-confined NC states.« less

Laser-induced growth of nanocrystals embedded in porous materials

PubMed Central

2013-01-01

Space localization of the linear and nonlinear optical properties in a transparent medium at the submicron scale is still a challenge to yield the future generation of photonic devices. Laser irradiation techniques have always been thought to structure the matter at the nanometer scale, but combining them with doping methods made it possible to generate local growth of several types of nanocrystals in different kinds of silicate matrices. This paper summarizes the most recent works developed in our group, where the investigated nanoparticles are either made of metal (gold) or chalcogenide semiconductors (CdS, PbS), grown in precursor-impregnated porous xerogels under different laser irradiations. This review is associated to new results on silver nanocrystals in the same kind of matrices. It is shown that, depending on the employed laser, the particles can be formed near the sample surface or deep inside the silica matrix. Photothermal and/or photochemical mechanisms may be invoked to explain the nanoparticle growth, depending on the laser, precursor, and matrix. One striking result is that metal salt reduction, necessary to the production of the corresponding nanoparticles, can efficiently occur due to the thermal wrenching of electrons from the matrix itself or due to multiphoton absorption of the laser light by a reducer additive in femtosecond regime. Very localized semiconductor quantum dots could also be generated using ultrashort pulses, but while PbS nanoparticles grow faster than CdS particles due to one-photon absorption, this better efficiency is counterbalanced by a sensitivity to oxidation. In most cases where the reaction efficiency is high, particles larger than the pores have been obtained, showing that a fast diffusion of the species through the interconnected porosity can modify the matrix itself. Based on our experience in these techniques, we compare several examples of laser-induced nanocrystal growth in porous silica xerogels, which allows

Communication: Visualization and spectroscopy of defects induced by dehydrogenation in individual silicon nanocrystals

NASA Astrophysics Data System (ADS)

Kislitsyn, Dmitry A.; Mills, Jon M.; Kocevski, Vancho; Chiu, Sheng-Kuei; DeBenedetti, William J. I.; Gervasi, Christian F.; Taber, Benjamen N.; Rosenfield, Ariel E.; Eriksson, Olle; Rusz, Ján; Goforth, Andrea M.; Nazin, George V.

2016-06-01

We present results of a scanning tunneling spectroscopy (STS) study of the impact of dehydrogenation on the electronic structures of hydrogen-passivated silicon nanocrystals (SiNCs) supported on the Au(111) surface. Gradual dehydrogenation is achieved by injecting high-energy electrons into individual SiNCs, which results, initially, in reduction of the electronic bandgap, and eventually produces midgap electronic states. We use theoretical calculations to show that the STS spectra of midgap states are consistent with the presence of silicon dangling bonds, which are found in different charge states. Our calculations also suggest that the observed initial reduction of the electronic bandgap is attributable to the SiNC surface reconstruction induced by conversion of surface dihydrides to monohydrides due to hydrogen desorption. Our results thus provide the first visualization of the SiNC electronic structure evolution induced by dehydrogenation and provide direct evidence for the existence of diverse dangling bond states on the SiNC surfaces.

Enhancing optical gains in Si nanocrystals via hydrogenation and cerium ion doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Dong-Chen; Li, Yan-Li; Song, Sheng-Chi

We report optical gain enhancements in Si nanocrystals (Si-NCs) via hydrogenation and Ce{sup 3+} ion doping. Variable stripe length technique was used to obtain gains. At 0.3 W/cm{sup 2} pumping power density of pulsed laser, net gains were observed together with gain enhancements after hydrogenation and/or Ce{sup 3+} ion doping; gains after loss corrections were between 89.52 and 341.95 cm{sup −1}; and the photoluminescence (PL) lifetime was found to decrease with the increasing gain enhancement. At 0.04 W/cm{sup 2} power density, however, no net gain was found and the PL lifetime increased with the increasing PL enhancement. The results were discussed according tomore » stimulated and spontaneous excitation and de-excitation mechanisms of Si-NCs.« less

Morphological Effect of Doping Environment on Silicon Nanowires Grown by Plasma-Assisted Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Lohn, Andrew J.; Cormia, Robert D.; Fryauf, David M.; Zhang, Junce; Norris, Kate J.; Kobayashi, Nobuhiko P.

2012-11-01

Physical properties of semiconductor nanowires are tied intimately to their specific morphologies such as length and diameter. We studied the growth of silicon nanowires and found their lengths and diameters to vary over orders of magnitude in different doping environments. In all cases we examined, doping resulted in increased diameters. In addition, boron doping was found to accelerate volume growth rate while arsenic and antimony both appeared to slow it down. We further studied the formation of the native oxides that cover the nanowires. X-ray photoelectron spectroscopy indicated that properties of the native oxides are also dependent on doping environment and correlated to doping-dependent shifts in apparent binding energy of the Si 2p3/2 peak illustrating that the electronic contribution is the dominant mechanism for the oxide growth.

Biotin-decorated silica coated PbS nanocrystals emitting in the second biological near infrared window for bioimaging

NASA Astrophysics Data System (ADS)

Corricelli, M.; Depalo, N.; di Carlo, E.; Fanizza, E.; Laquintana, V.; Denora, N.; Agostiano, A.; Striccoli, M.; Curri, M. L.

2014-06-01

Nanoparticles (NPs) emitting in the second biological near infrared (NIR) window of the electromagnetic spectrum have been successfully synthesized by growing a silica shell on the hydrophobic surface of OLEA/TOP PbS nanocrystals (NCs), by means of a reverse microemulsion approach, and subsequently decorated with biotin molecules. The fabrication of very uniform and monodisperse NPs, formed of SiO2 shell coated single core PbS NCs, has been demonstrated by means of a set of complementary optical and structural techniques (Vis-NIR absorption and photoluminescence spectroscopy, transmission electron microscopy) that have highlighted how experimental parameters, such as PbS NC and silica precursor concentration, are crucial to direct the morphology and optical properties of silica coated PbS NPs. Subsequently, the silica surface of the core-shell NPs has been grafted with amino groups, in order to achieve covalent binding of biotin to NIR emitting silica coated NPs. Finally the successful reaction with a green-fluorescent labelled streptavidin has verified the molecular recognition response of the biotin molecules decorating the PbS@SiO2 NP surface. Dynamic light scattering (DLS) and ζ-potential techniques have been used to monitor the hydrodynamic diameter and colloidal stability of both PbS@SiO2 and biotin decorated NPs, showing their high colloidal stability in physiological media, as needed for biomedical applications. Remarkably the obtained biotinylated PbS@SiO2 NPs have been found to retain emission properties in the `second optical window' of the NIR region of the electromagnetic spectrum, thus representing attractive receptor-targeted NIR fluorescent probes for in vivo tumour imaging.Nanoparticles (NPs) emitting in the second biological near infrared (NIR) window of the electromagnetic spectrum have been successfully synthesized by growing a silica shell on the hydrophobic surface of OLEA/TOP PbS nanocrystals (NCs), by means of a reverse microemulsion

Enhanced Adsorption and Photocatalytic Activities of Co-Doped TiO2 Immobilized on Silica for Paraquat

NASA Astrophysics Data System (ADS)

Nghia, Nguyen Manh; Negishi, Nobuaki; Hue, Nguyen Thi

2018-01-01

We studied the adsorption and photocatalysis of paraquat in an aqueous solution with cobalt-doped TiO2 supported on mesoporous silica gel. With Co concentration increasing from 0% to 9%, it was found that the TiO2 anatase phase remained unchanged and the Co was uniformly distributed, while the band gap energy decreased from 3.32 eV to 2.64 eV. The drop in band gap energy leads to the Co-TiO2/silica gel photocatalyst oxidation of paraquat to NH4 + and NO3 - products under visible light. Relative to TiO2, the incorporation of Co into TiO2 led to an increase in the adsorption ability against the paraquat. A possible mechanism of the paraquat degradation may be that the paraquat was selectively adsorbed onto the Co-TiO2/silica gel photocatalyst before light irradiation and after that the paraquat was continuously photodecomposed.

Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

PubMed

Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping

2018-01-09

It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

Effects of surface functionalization of hydrophilic NaYF4 nanocrystals doped with Eu3+ on glutamate and GABA transport in brain synaptosomes

NASA Astrophysics Data System (ADS)

Sojka, Bartlomiej; Kociołek, Daria; Banski, Mateusz; Borisova, Tatiana; Pozdnyakova, Natalia; Pastukhov, Artem; Borysov, Arsenii; Dudarenko, Marina; Podhorodecki, Artur

2017-08-01

Specific rare earth doped nanocrystals (NCs), a recent class of nanoparticles with fluorescent features, have great bioanalytical potential. Neuroactive properties of NaYF4 nanocrystals doped with Eu3+ were assessed based on the analysis of their effects on glutamate- and γ-aminobutyric acid (GABA) transport process in nerve terminals isolated from rat brain (synaptosomes). Two types of hydrophilic NCs were examined in this work: (i) coated by polyethylene glycol (PEG) and (ii) with OH groups at the surface. It was found that NaYF4:Eu3+-PEG and NaYF4:Eu3+-OH within the concentration range of 0.5-3.5 and 0.5-1.5 mg/ml, respectively, did not influence Na+-dependent transporter-dependent l-[14C]glutamate and [3H]GABA uptake and the ambient level of the neurotransmitters in the synaptosomes. An increase in NaYF4:Eu3+-PEG and NaYF4:Eu3+-OH concentrations up to 7.5 and 3.5 mg/ml, respectively, led to the (1) attenuation of the initial velocity of uptake of l-[14C]glutamate and [3H]GABA and (2) elevation of ambient neurotransmitters in the suspension of nerve terminals. In the mentioned concentrations, nanocrystals did not influence acidification of synaptic vesicles that was shown with pH-sensitive fluorescent dye acridine orange, however, decreased the potential of the plasma membrane of synaptosomes. In comparison with other nanoparticles studied with similar methodological approach, NCs start to exhibit their effects on neurotransmitter transport at concentrations several times higher than those shown for carbon dots, detonation nanodiamonds and an iron storage protein ferritin, whose activity can be registered at 0.08, 0.5 and 0.08 mg/ml, respectively. Therefore, NCs can be considered lesser neurotoxic as compared to above nanoparticles.

The influence of conjugated alkynyl(aryl) surface groups on the optical properties of silicon nanocrystals: photoluminescence through in-gap states.

PubMed

Angı, Arzu; Sinelnikov, Regina; Heenen, Hendrik H; Meldrum, Al; Veinot, Jonathan G C; Scheurer, Christoph; Reuter, Karsten; Ashkenazy, Or; Azulay, Doron; Balberg, Isaac; Millo, Oded; Rieger, Bernhard

2018-08-31

Developing new methods, other than size and shape, for controlling the optoelectronic properties of semiconductor nanocrystals is a highly desired target. Here we demonstrate that the photoluminescence (PL) of silicon nanocrystals (SiNCs) can be tuned in the range 685-800 nm solely via surface functionalization with alkynyl(aryl) (phenylacetylene, 2-ethynylnaphthalene, 2-ethynyl-5-hexylthiophene) surface groups. Scanning tunneling microscopy/spectroscopy on single nanocrystals revealed the formation of new in-gap states adjacent to the conduction band edge of the functionalized SiNCs. PL red-shifts were attributed to emission through these in-gap states, which reduce the effective band gap for the electron-hole recombination process. The observed in-gap states can be associated with new interface states formed via (-Si-C≡C-) bonds in combination with conjugated molecules as indicated by ab initio calculations. In contrast to alkynyl(aryl)s, the formation of in-gap states and shifts in PL maximum of the SiNCs were not observed with aryl (phenyl, naphthalene, 2-hexylthiophene) and alkynyl (1-dodecyne) surface groups. These outcomes show that surface functionalization with alkynyl(aryl) molecules is a valuable tool to control the electronic structure and optical properties of SiNCs via tuneable interface states, which may enhance the performance of SiNCs in semiconductor devices.

Photonic bandgap single-mode optical fibre with ytterbium-doped silica glass core

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorova, O N; Semenov, S L; Vel'miskin, V V

2011-01-24

A photonic bandgap fibre with an ytterbium-doped silica glass core is fabricated and investigated. The possibility of implementing single-mode operation of such fibres in a wide spectral range at a large (above 20 {mu}m) mode field diameter makes them promising for fibre lasers and amplifiers. To ensure a high quality of the beam emerging from the fibre, particular attention is paid to increasing the optical homogeneity of the ytterbium-doped core glass. (optical fibres)

Annealing of Heavily Boron-Doped Silicon: Effect on Electrical and Thermoelectric Properties.

PubMed

Zulian, Laura; Segrado, Francesco; Narducci, Dario

2017-03-01

In previous studies it was shown that heavily boron-doped nanocrystalline silicon submitted to thermal treatments at temperatures ≥800 °C is characterized by an anomalously high thermoelectric power factor. Its enhanced performances were ascribed to the formation of SiBx precipitates at grain boundary, leading to the formation of potential barriers that filter out low-energy carriers, then causing a simultaneous enhancement of the Seebeck coefficient and of the electrical conductivity. To further investigate the effect of thermal treatment on boron-doped nanocrystalline silicon, samples were submitted to a host of annealing processes or of sequences of them at temperatures between 900 and 1000 °C and for various amounts of time. Electrical conductivity and Hall effect measurements were carried out after each thermal treatment over the temperature range 20–300 K. They provided evidence of the formation of an impurity band, and of hopping conduction at very low temperatures. Hall resistivity data versus temperature provided therefore important insights in the electronic structure of the system, which will enable a more complete understanding of the factors ruling energy filtering in this class of materials.

Impact of Silicon Nanocrystal Oxidation on the Nonmetallic Growth of Carbon Nanotubes.

PubMed

Rocks, Conor; Mitra, Somak; Macias-Montero, Manuel; Maguire, Paul; Svrcek, Vladimir; Levchenko, Igor; Ostrikov, Kostya; Mariotti, Davide

2016-07-27

Carbon nanotube (CNT) growth has been demonstrated recently using a number of nonmetallic semiconducting and metal oxide nanoparticles, opening up pathways for direct CNT synthesis from a number of more desirable templates without the need for metallic catalysts. However, CNT growth mechanisms using these nonconventional catalysts has been shown to largely differ and reamins a challenging synthesis route. In this contribution we show CNT growth from partially oxidized silicon nanocrystals (Si NCs) that exhibit quantum confinement effects using a microwave plasma enhanced chemical vapor deposition (PECVD) method. On the basis of solvent and a postsynthesis frgamentation process, we show that oxidation of our Si NCs can be easily controlled. We determine experimentally and explain with theoretical simulations that the Si NCs morphology together with a necessary shell oxide of ∼1 nm is vital to allow for the nonmetallic growth of CNTs. On the basis of chemical analysis post-CNT-growth, we give insight into possible mechanisms for CNT nucleation and growth from our partially oxidized Si NCs. This contribution is of significant importance to the improvement of nonmetallic catalysts for CNT growth and the development of Si NC/CNT interfaces.

Ultrasound-assisted synthesis of zinc molybdate nanocrystals and molybdate-doped epoxy/PDMS nanocomposite coatings for Mg alloy protection.

PubMed

Eduok, Ubong; Szpunar, Jerzy

2018-06-01

Zinc molybdate (ZM) is a safer anticorrosive additive for cooling systems when compared with chromates and lead salts, due to its insolubility in aqueous media. For most molybdate pigments, their molybdate anion (MoO 4 -2 ) acts as an anionic inhibitor and its passivation capacity is comparable with chromate anion (CrO 4 -2 ). To alleviate the environmental concerns involving chromates-based industrial protective coatings, we have proposed new alternative in this work. We have synthesized ZM nanocrystals via ultrasound-assisted process and encapsulated them within an epoxy/PDMS coating towards corrosion protection. The surface morphology and mechanical properties of these ZM doped epoxy/PDMS nanocomposite coatings is exhaustively discussed to show the effect of ZM content on protective properties. The presence of ZM nanocrystals significantly contributed to the corrosion barrier performance of the coating while the amount of ZM nanocrystals needed to prepare an epoxy coating with optimum barrier performance was established. Beyond 2 wt% ZM concentration, the siloxane-structured epoxy coating network became saturated with ZM pigments. This further broadened inherent pores channels, leading to the percolation of corrosion chloride ions through the coating. SEM evidence has revealed proof of surface delamination on ZM3 coating. A model mechanism of corrosion resistance has been proposed for ZM doped epoxy/PDMS nanocomposite coatings from exhaustive surface morphological investigations and evidence. This coating matrix may have emerging applications in cooling systems as anticorrosive surface paints as well as create an avenue for environmental corrosion remediation. Copyright © 2018 Elsevier B.V. All rights reserved.

Influence of silicon doping of titanium nickelide near-surface layers on alloy cytocompatibility

NASA Astrophysics Data System (ADS)

Lotkov, A. I.; Matveev, A. L.; Artemyeva, L. V.; Meysner, S. N.; Matveeva, V. A.; Kudryashov, A. N.

2017-12-01

The cytocompatibility of titanium nickelide (TiNi) with near-surface layers doped with silicon ions was studied on mesenchymal stem cells of rat bone marrow cultivated in vitro. The cytotoxic effect of eluted components of material on the mesenchymal stem cells was determined using a RTCA iCELLigence cellular analyzer. The proliferative activity of mesenchymal stem cells cultivated in the presence or on the surfaces of titanium nickelide samples was estimated from the cell mitochondrial respiration rate in MTT tests using [2-(4-Iodophenyl)-3-(4-nitrophenyl)-5-(2, 4-disulfophenyl)-2H-tetrazolium] tetrazolium salt. It is shown that ion plasma modification of near-surface layers of titanium nickelide with silicon improves the cytocompatibility of the alloy.

The Study of the Interaction between Silica Filler and Silicone Rubber

NASA Astrophysics Data System (ADS)

Liu, Jiesheng; Gong, Xiaoqiang; Zhang, Rongtang

2018-01-01

The interaction between silica filler and silicone rubber was studied by swelling ratio, Kraus curve and crosslinking density test. The results showed that lower values of Vro/Vrf and swelling ratio in modified filler system suggests good filler-matrix interactions. The composites with silane coupling agents show higher crosslink-density compared that of untreated ones. In the light of the above statement, it can be concluded that modification of filler is the crucial factor in creating a good interaction between the filler and silicone rubber.

Red-luminescence band: A tool for the quality assessment of germanium and silicon nanocrystals

NASA Astrophysics Data System (ADS)

Fraj, I.; Favre, L.; David, T.; Abbarchi, M.; Liu, K.; Claude, J. B.; Ronda, A.; Naffouti, M.; Saidi, F.; Hassen, F.; Maaref, H.; Aqua, J. N.; Berbezier, I.

2017-10-01

We present the photoluminescence (PL) emission of Silicon and Germanium nanocrystals (NCs) of different sizes embedded in two different matrices. Formation of the NCs is achieved via solid-state dewetting during annealing in a molecular beam epitaxy ultra-high vacuum system of ultrathin amorphous Si and Ge layers deposited at room temperature on SiO2. During the dewetting process, the bi-dimensional amorphous layers transform into small pseudo-spherical islands whose mean size can be tuned directly with the deposited thickness. The nanocrystals are capped either ex situ by silicon dioxide or in situ by amorphous Silicon. The surface-state dependent emission (typically in the range 1.74 eV-1.79 eV) exhibited higher relative PL quantum yields compared to the emission originating from the band gap transition. This red-PL emission comes from the radiative transitions between a Si band and an interface level. It is mainly ascribed to the NCs and environment features deduced from morphological and structural analyses. Power dependent analysis of the photoluminescence intensity under continuous excitation reveals a conventional power law with an exponent close to 1, in agreement with the type II nature of the emission. We show that Ge-NCs exhibit much lower quantum efficiency than Si-NCs due to non-radiative interface states. Low quantum efficiency is also obtained when NCs have been exposed to air before capping, even if the exposure time is very short. Our results indicate that a reduction of the non-radiative surface states is a key strategy step in producing small NCs with increased PL emission for a variety of applications. The red-PL band is then an effective tool for the quality assessment of NCs based structures.

Advances in spectral conversion for photovoltaics: up-converting Er3+ doped YF3 nano-crystals in transparent glass ceramic

NASA Astrophysics Data System (ADS)

Marques-Hueso, Jose; Chen, Daqin; MacDougall, Sean K. W.; Wang, Yuansheng; Richards, Bryce S.

2011-09-01

Up- and down-conversion (UC, DC) constitute two singular routes to achieve improved energy harvesting of sunlight by changing its shape of the solar spectrum. To obtain a significant conversion rate two main challenges have to be overcome: i) the excited lanthanide ions have to emit efficiently, a target which has been better accomplished for DC materials; ii) the absorption in the lanthanide-based UC and DC layers has to be high to ensure a sizeable fraction of photons can be harvested. In this paper, we review such materials and their use as spectral converters for photovoltaics (PV), paying special attention to the UC and DC processes in lanthanide glasses in fluoride matrices. We discuss the challenges that need to be overcome in order to implement these materials in real PV devices. Finally, we will present the synthesis of erbium (Er3+) doped YF3 nano-crystals embedded in transparent glass ceramic (TGC) by melt quenching. This material presents a low phonon energy environment for the Er3+ ions due to the fluoride crystals, while the silica glass provides chemical and mechanical stability to the compound.

Effects of surface nanostructuring and impurity doping on ultrafast carrier dynamics of silicon photovoltaic cells: a pump-probe study

NASA Astrophysics Data System (ADS)

Chen, Tianyu; Nam, Yoon-Ho; Wang, Xinke; Han, Peng; Sun, Wenfeng; Feng, Shengfei; Ye, Jiasheng; Song, Jae-Won; Lee, Jung-Ho; Zhang, Chao; Zhang, Yan

2018-01-01

We present femtosecond optical pump-terahertz probe studies on the ultrafast dynamical processes of photo-generated charge carriers in silicon photovoltaic cells with various nanostructured surfaces and doping densities. The pump-probe measurements provide direct insight on the lifetime of photo-generated carriers, frequency-dependent complex dielectric response along with photoconductivity of silicon photovoltaic cells excited by optical pump pulses. A lifetime of photo-generated carriers of tens of nanosecond is identified from the time-dependent pump-induced attenuation of the terahertz transmission. In addition, we find a large value of the imaginary part of the dielectric function and of the real part of the photoconductivity in silicon photovoltaic cells with micron length nanowires. We attribute these findings to the result of defect-enhanced electron-photon interactions. Moreover, doping densities of phosphorous impurities in silicon photovoltaic cells are also quantified using the Drude-Smith model with our measured frequency-dependent complex photoconductivities.

High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

NASA Astrophysics Data System (ADS)

Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

2018-02-01

In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

Opening the band gap of graphene through silicon doping for the improved performance of graphene/GaAs heterojunction solar cells.

PubMed

Zhang, S J; Lin, S S; Li, X Q; Liu, X Y; Wu, H A; Xu, W L; Wang, P; Wu, Z Q; Zhong, H K; Xu, Z J

2016-01-07

Graphene has attracted increasing interest due to its remarkable properties. However, the zero band gap of monolayered graphene limits it's further electronic and optoelectronic applications. Herein, we have synthesized monolayered silicon-doped graphene (SiG) with large surface area using a chemical vapor deposition method. Raman and X-ray photoelectron spectroscopy measurements demonstrate that the silicon atoms are doped into graphene lattice at a doping level of 2.7-4.5 at%. Electrical measurements based on a field effect transistor indicate that the band gap of graphene has been opened via silicon doping without a clear degradation in carrier mobility, and the work function of SiG, deduced from ultraviolet photoelectron spectroscopy, was 0.13-0.25 eV larger than that of graphene. Moreover, when compared with the graphene/GaAs heterostructure, SiG/GaAs exhibits an enhanced performance. The performance of 3.4% silicon doped SiG/GaAs solar cell has been improved by 33.7% on average, which was attributed to the increased barrier height and improved interface quality. Our results suggest that silicon doping can effectively engineer the band gap of monolayered graphene and SiG has great potential in optoelectronic device applications.

Precision calibration of the silicon doping level in gallium arsenide epitaxial layers

NASA Astrophysics Data System (ADS)

Mokhov, D. V.; Berezovskaya, T. N.; Kuzmenkov, A. G.; Maleev, N. A.; Timoshnev, S. N.; Ustinov, V. M.

2017-10-01

An approach to precision calibration of the silicon doping level in gallium arsenide epitaxial layers is discussed that is based on studying the dependence of the carrier density in the test GaAs layer on the silicon- source temperature using the Hall-effect and CV profiling techniques. The parameters are measured by standard or certified measuring techniques and approved measuring instruments. It is demonstrated that the use of CV profiling for controlling the carrier density in the test GaAs layer at the thorough optimization of the measuring procedure ensures the highest accuracy and reliability of doping level calibration in the epitaxial layers with a relative error of no larger than 2.5%.

Identification of photoluminescence P line in indium doped silicon as In{sub Si}-Si{sub i} defect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lauer, Kevin, E-mail: klauer@cismst.de; Möller, Christian; Schulze, Dirk

2015-01-15

Indium and carbon co-implanted silicon was investigated by low-temperature photoluminescence spectroscopy. A photoluminescence peak in indium doped silicon (P line) was found to depend on the position of a silicon interstitial rich region, the existence of a SiN{sub x}:H/SiO{sub x} stack and on characteristic illumination and annealing steps. These results led to the conclusion that silicon interstitials are involved in the defect and that hydrogen impacts the defect responsible for the P line. By applying an unique illumination and annealing cycle we were able to link the P line defect with a defect responsible for degradation of charge carrier lifetimemore » in indium as well as boron doped silicon. We deduced a defect model consisting of one acceptor and one silicon interstitial atom denoted by A{sub Si}-Si{sub i}, which is able to explain the experimental data of the P line as well as the light-induced degradation in indium and boron doped silicon. Using this model we identified the defect responsible for the P line as In{sub Si}-Si{sub i} in neutral charge state and C{sub 2v} configuration.« less

Fabrication of superhydrophobic and antibacterial surface on cotton fabric by doped silica-based sols with nanoparticles of copper

PubMed Central

2011-01-01

The study discussed the synthesis of silica sol using the sol-gel method, doped with two different amounts of Cu nanoparticles. Cotton fabric samples were impregnated by the prepared sols and then dried and cured. To block hydroxyl groups, some samples were also treated with hexadecyltrimethoxysilane. The average particle size of colloidal silica nanoparticles were measured by the particle size analyzer. The morphology, roughness, and hydrophobic properties of the surface fabricated on cotton samples were analyzed and compared via the scanning electron microscopy, the transmission electron microscopy, the scanning probe microscopy, with static water contact angle (SWC), and water shedding angle measurements. Furthermore, the antibacterial efficiency of samples was quantitatively evaluated using AATCC 100 method. The addition of 0.5% (wt/wt) Cu into silica sol caused the silica nanoparticles to agglomerate in more grape-like clusters on cotton fabrics. Such fabricated surface revealed the highest value of SWC (155° for a 10-μl droplet) due to air trapping capability of its inclined structure. However, the presence of higher amounts of Cu nanoparticles (2% wt/wt) in silica sol resulted in the most slippery smooth surface on cotton fabrics. All fabricated surfaces containing Cu nanoparticles showed the perfect antibacterial activity against both of gram-negative and gram-positive bacteria. PMID:22085594

Application of neutron transmutation doping method to initially p-type silicon material.

PubMed

Kim, Myong-Seop; Kang, Ki-Doo; Park, Sang-Jun

2009-01-01

The neutron transmutation doping (NTD) method was applied to the initially p-type silicon in order to extend the NTD applications at HANARO. The relationship between the irradiation neutron fluence and the final resistivity of the initially p-type silicon material was investigated. The proportional constant between the neutron fluence and the resistivity was determined to be 2.3473x10(19)nOmegacm(-1). The deviation of the final resistivity from the target for almost all the irradiation results of the initially p-type silicon ingots was at a range from -5% to 2%. In addition, the burn-up effect of the boron impurities, the residual (32)P activity and the effect of the compensation characteristics for the initially p-type silicon were studied. Conclusively, the practical methodology to perform the neutron transmutation doping of the initially p-type silicon ingot was established.

Assessment of in vivo systemic toxicity and biodistribution of iron-doped silica nanoshells.

PubMed

Mendez, Natalie; Liberman, Alexander; Corbeil, Jacqueline; Barback, Christopher; Viveros, Robert; Wang, James; Wang-Rodriguez, Jessica; Blair, Sarah L; Mattrey, Robert; Vera, David; Trogler, William; Kummel, Andrew C

2017-04-01

Silica nanoparticles are an emerging class of biomaterials which may be used as diagnostic and therapeutic tools for biomedical applications. In particular, hollow silica nanoshells are attractive due to their hollow core. Approximately 70% of a 500 nm nanoshell is hollow, therefore more particles can be administered on a mg/kg basis compared to solid nanoparticles. Additionally, their nanoporous shell permits influx/efflux of gases and small molecules. Since the size, shape, and composition of a nanoparticle can dramatically alter its toxicity and biodistribution, the toxicology of these nanomaterials was assessed. A single dose toxicity study was performed in vivo to assess the toxicity of 500 nm iron-doped silica nanoshells at clinically relevant doses of 10-20 mg/kg. This study showed that only a trace amount of silica was detected in the body 10 weeks post-administration. The hematology, biochemistry and pathological results show that the nanoshells exhibit no acute or chronic toxicity in mice. Copyright © 2016 Elsevier Inc. All rights reserved.

Charge transport in metal oxide nanocrystal-based materials

NASA Astrophysics Data System (ADS)

Runnerstrom, Evan Lars

There is probably no class of materials more varied, more widely used, or more ubiquitous than metal oxides. Depending on their composition, metal oxides can exhibit almost any number of properties. Of particular interest are the ways in which charge is transported in metal oxides: devices such as displays, touch screens, and smart windows rely on the ability of certain metal oxides to conduct electricity while maintaining visible transparency. Smart windows, fuel cells, and other electrochemical devices additionally rely on efficient transport of ionic charge in and around metal oxides. Colloidal synthesis has enabled metal oxide nanocrystals to emerge as a relatively new but highly tunable class of materials. Certain metal oxide nanocrystals, particularly highly doped metal oxides, have been enjoying rapid development in the last decade. As in myriad other materials systems, structure dictates the properties of metal oxide nanocrystals, but a full understanding of how nanocrystal synthesis, the processing of nanocrystal-based materials, and the structure of nanocrystals relate to the resulting properties of nanocrystal-based materials is still nascent. Gaining a fundamental understanding of and control over these structure-property relationships is crucial to developing a holistic understanding of metal oxide nanocrystals. The unique ability to tune metal oxide nanocrystals by changing composition through the introduction of dopants or by changing size and shape affords a way to study the interplay between structure, processing, and properties. This overall goal of this work is to chemically synthesize colloidal metal oxide nanocrystals, process them into useful materials, characterize charge transport in materials based on colloidal metal oxide nanocrystals, and develop ways to manipulate charge transport. In particular, this dissertation characterizes how the charge transport properties of metal oxide nanocrystal-based materials depend on their processing and

40 CFR 721.10482 - Siloxanes and Silicones, di-Me, Me vinyl, hydroxy-terminated, reaction products with silica.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 40 Protection of Environment 32 2013-07-01 2013-07-01 false Siloxanes and Silicones, di-Me, Me... Silicones, di-Me, Me vinyl, hydroxy-terminated, reaction products with silica. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as Siloxanes and Silicones...

40 CFR 721.10482 - Siloxanes and Silicones, di-Me, Me vinyl, hydroxy-terminated, reaction products with silica.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 40 Protection of Environment 31 2014-07-01 2014-07-01 false Siloxanes and Silicones, di-Me, Me... Silicones, di-Me, Me vinyl, hydroxy-terminated, reaction products with silica. (a) Chemical substance and significant new uses subject to reporting. (1) The chemical substance identified as Siloxanes and Silicones...

Neutron transmutation doping of silicon in the SAFARI-1 research reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Louw, P.A.; Robertson, D.G.; Strydom, W.J.

1994-12-31

The SAFARI-1 research reactor has operated with an exemplary safety record since commissioning in 1965. As part of a commercialisation effort a silicon irradiation facility (SILIRAD) has been installed in the poolside region of SAFARI-1 for Neutron Transmutation Doping (NTD) of silicon. Commissioning of the facility took place in the last quarter of 1992 with a series of trial irradiations which were performed in close collaboration with Wacker Chemitronic of Germany. A methodology for the determination of irradiation times necessary to achieve the target resistivities was verified on the basis of the results from the trial irradiations. All production activitiesmore » are controlled by quality assurance procedures. To date some hundred and twelve silicon ingots (103 mm diameter) have been successfully irradiated on a commercial contract basis. The observed axial and radial variations in the resistivity profile of the ingots are very small compared to the profiles associated with conventionally doped silicon and small tolerances on target resistivities are attained. In this paper an overview of the design and characterisation of SILIRAD is given and the methods applied that ensure a quality product are described. Results obtained from trial and production irradiations are presented and the envisaged future modifications to SILIRAD discussed.« less

Design of a novel dual Z-scheme photocatalytic system composited of Ag{sub 2}O modified Ti{sup 3+} self doped TiO{sub 2} nanocrystals with individual exposed (001) and (101) facets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Mengyan; Liu, Hui, E-mail: liuhui@sust.edu.cn

A novel dual Z-scheme photocatalytic system composited of Ag{sub 2}O nanocrystals modified Ti{sup 3+} self doped TiO{sub 2} nanocrystals with individual exposed (001) and (101) facets were successfully fabricated. In which, the Ti{sup 3+} self doped TiO{sub 2} nanocrystals with individual exposed (001) and (101) facets have been firstly prepared by a simple hydrothermal method, subsequently the as-prepared products were modified with Ag{sub 2}O nanocrystals through a sonochemical depositing process in order to build a novel dual Z-scheme photocatalytic system. The samples were carefully characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), UV–visible diffuse reflectancemore » spectra (UV–vis DRS), and Brunauer-Emmett-Teller (BET). The photocatalytic activity toward degradation of Rhodamine B (Rh B) aqueous solution under stimulated solar light was investigated. The experimental results showed this new dual Z-scheme photocatalytic system possess an enhanced photocatalytic degradation activity compared to that similar surface heterojunction photocatalysts composed of Ti{sup 3+} self doped TiO{sub 2} nanocrystals with individual exposed (001) and (101) facets. This novel photocatalytic system presents a high charge-separation efficiency and strong redox ability. This study will help us to better understand the photocatalytic mechanism of semiconductor photocatalysts with exposed different facets, and provide a new insight into the design and fabrication of advanced photocatalytic materials. - Highlights: •A novel dual Z-scheme system was built by Ag{sub 2}O and facet exposed TiO{sub 2} nanocrystals. •The individual TiO{sub 2} nanocrystals exposed (001) and (101) facets respectively. •Ag{sub 2}O coupled with Ti{sup 3+} self doped TiO{sub 2} nanocrystals through a sonochemical process. •The as-prepared sample possesses a super photocatalytic activity.« less

Temperature Dependence Discontinuity in the Stability of Manganese doped Ceria Nanocrystals

DOE PAGES

Wu, Longjia; Dholabhai, Pratik; Uberuaga, Blas P.; ...

2017-01-05

CeO 2 has strong potential for chemical-looping water splitting. It has been shown that manganese doping decreases interface energies of CeO 2, allowing increased stability of high surface areas in this oxygen carrier oxide. The phenomenon is related to the segregation of Mn3+ at interfaces, which causes a measurable decrease in excess energy. Here in the present work, it is shown that, despite the stability of nanocrystals of manganese-doped CeO 2 with relation to undoped CeO 2, the effect is strongly dependent on the oxidation state of manganese, i.e., on the temperature. At temperatures below 800 °C, Mn is inmore » the 3+ valence state, and coarsening is hindered by the reduced interface energetics, showing smaller crystal sizes with increasing Mn content. At temperatures above 800 °C, Mn is reduced to its 2+ valence state, and coarsening is enhanced with increasing Mn content. Atomistic simulations show the segregation of Mn to grain boundaries is relatively insensitive to the charge state of the dopant. However, point defect modeling finds that the reduced state causes a decrease in cation vacancy concentration and an increase in cation interstitials, reducing drag forces for grain boundary mobility and increasing growth rates.« less

Synthesis and near-infrared fluorescence of K5NdLi2F10 nanocrystals and their dispersion with high doping concentration and long lifetime.

PubMed

Duan, Weikuan; Zhang, Yanyan; Wang, Zhongyue; Jiang, Jingyi; Liang, Chen; Wei, Wei

2014-06-07

K5NdLi2F10 nanocrystals were synthesized by a novel synthetic route in the liquid phase, which could improve the morphology and reduce the size effectively, for the first time. The luminescence intensities of the K5NdLi2F10 nanocrystals and their dispersion in polyethylene glycol 400 (PEG-400) approximate to that of neodymium doped phosphate glass (3 mol%), while the lifetimes of the nanocrystals alone and when dispersed with Nd(3+) ions (1 × 10(20) cm(-3)) are 303.4 μs and 174.6 μs respectively. Based on the Judd-Ofelt analysis, the emission quantum yield of the dispersion reaches 39.57%. In all, the K5NdLi2F10 nanocrystals and their dispersion have promising applications as liquid laser materials and biological fluorescent markers.

Tin-dioxide nanocrystals as Er3+ luminescence sensitizers: Formation of glass-ceramic thin films and their characterization

NASA Astrophysics Data System (ADS)

Zur, Lidia; Tran, Lam Thi Ngoc; Meneghetti, Marcello; Tran, Van Thi Thanh; Lukowiak, Anna; Chiasera, Alessandro; Zonta, Daniele; Ferrari, Maurizio; Righini, Giancarlo C.

2017-01-01

Silica-tin dioxide thin films doped with Er3+ ions were fabricated and investigated. Different parameters such as heat-treatment temperatures, molar concentrations of SnO2 as well as Er3+ ions concentration were changed in order to obtain the best properties of presented thin films. Using several techniques, thin films were characterized and proved to be crack-free, water-free and smooth after a heat-treatment at 1200 °C. Aiming to application in optics, the transparency of thin films was also evidenced by transmission spectra. Based on the photoluminescence measurements, the mechanism of energy transfer from SnO2 nanocrystals to Er3+ ions was examined and discussed.

Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator

NASA Astrophysics Data System (ADS)

Presnov, Denis E.; Bozhev, Ivan V.; Miakonkikh, Andrew V.; Simakin, Sergey G.; Trifonov, Artem S.; Krupenin, Vladimir A.

2018-02-01

We present the original method for fabricating a sensitive field/charge sensor based on field effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only. A FET with a kink-like silicon nanowire channel was fabricated from the inhomogeneously doped silicon on insulator wafer very close (˜100 nm) to the extremely sharp corner of a silicon chip forming local probe. The single e-beam lithographic process with a shadow deposition technique, followed by separate two reactive ion etching processes, was used to define the narrow semiconductor nanowire channel. The sensors charge sensitivity was evaluated to be in the range of 0.1-0.2 e /√{Hz } from the analysis of their transport and noise characteristics. The proposed method provides a good opportunity for the relatively simple manufacture of a local field sensor for measuring the electrical field distribution, potential profiles, and charge dynamics for a wide range of mesoscopic objects. Diagnostic systems and devices based on such sensors can be used in various fields of physics, chemistry, material science, biology, electronics, medicine, etc.

Synthesis of Silicon Nitride and Silicon Carbide Nanocomposites through High Energy Milling of Waste Silica Fume for Structural Applications

NASA Astrophysics Data System (ADS)

Suri, Jyothi

Nanocomposites have been widely used in a multitude of applications in electronics and structural components because of their improved mechanical, electrical, and magnetic properties. Silicon nitride/Silicon carbide (Si 3N4/SiC) nanocomposites have been studied intensively for low and high temperature structural applications, such as turbine and automobile engine components, ball bearings, turbochargers, as well as energy applications due to their superior wear resistance, high temperature strength, high oxidation resistance and good creep resistance. Silica fume is the waste material produced during the manufacture of silicon and ferro-silicon alloys, and contains 94 to 97 wt.% SiO2. In the present dissertation, the feasibility of using waste silica fume as the raw material was investigated to synthesize (I) advanced nanocomposites of Si3N4/SiC, and (2) porous silicon carbide (SiC) for membrane applications. The processing approach used to convert the waste material to advanced ceramic materials was based on a novel process called, integrated mechanical and thermal activation process (IMTA) process. In the first part of the dissertation, the effect of parameters such as carbothermic nitridation and reduction temperature and the graphite concentration in the starting silica fume plus graphite mixture, were explored to synthesize nanocomposite powders with tailored amounts of Si3N4 and SiC phases. An effective way to synthesize carbon-free Si3N 4/SiC composite powders was studied to provide a clear pathway and fundamental understanding of the reaction mechanisms. Si3N4/SiC nanocomposite powders were then sintered using two different approaches, based on liquid phase sintering and spark plasma sintering processes, with Al 2O3 and Y2O3 as the sintering aids. The nanocomposites were investigated for their densification behavior, microstructure, and mechanical properties. Si3N4/SiC nanocomposites thus obtained were found to possess superior mechanical properties at much

Photoinduced Changes in Ge-Doped Flame Hydrolysis Silica Glass Films

NASA Astrophysics Data System (ADS)

Zhang, Letian; Xie, Wenfa; Wang, Jian; Li, Aiwu; Xing, Hua; Zheng, Wei; Qian, Ying; Zhang, Jian; Zhang, Yushu

2003-12-01

The influence on the structural and optical properties of Ge-doped flame hydrolysis silica glass films of KrF excimer laser irradiation was investigated. A maximum refractive index change of about 3.41× 10-3 is obtained at approximately 1550 nm after 10 min irradiation. The irradiation process and roughness of the films were analyzed by atomic force microscopy (AFM). As irradiation time increased, the density of the films increased, resulting in decreases in the surface roughness and increases in the refractive index of the films.

Alkyl-Capped Silicon Nanocrystals Lack Cytotoxicity and have Enhanced Intracellular Accumulation in Malignant Cells via Cholesterol-Dependent Endocytosis

PubMed Central

Alsharif, Naif H; Berger, Christine E M; Varanasi, Satya S; Chao, Yimin; Horrocks, Benjamin R; Datta, Harish K

2009-01-01

Nanocrystals of various inorganic materials are being considered for application in the life sciences as fluorescent labels and for such therapeutic applications as drug delivery or targeted cell destruction. The potential applications of the nanoparticles are critically compromised due to the well-documented toxicity and lack of understanding about the mechanisms involved in the intracellular internalization. Here intracellular internalization and toxicity of alkyl-capped silicon nanocrystals in human neoplastic and normal primary cells is reported. The capped nanocrystals lack cytotoxicity, and there is a marked difference in the rate and extent of intracellular accumulation of the nanoparticles between human cancerous and non-cancerous primary cells, the rate and extent being higher in the malignant cells compared to normal human primary cells. The exposure of the cells to the alkyl-capped nanocrystals demonstrates no evidence of in vitro cytotoxicity when assessed by cell morphology, apoptosis, and cell viability assays. The internalization of the nanocrystals by Hela and SW1353 cells is almost completely blocked by the pinocytosis inhibitors filipin, cytochalasin B, and actinomycin D. The internalization process is not associated with any surface change in the nanoparticles, as their luminescence spectrum is unaltered upon transport into the cytosol. The observed dramatic difference in the rate and extent of internalization of the nanocrystals between malignant and non-malignant cells therefore offers potential application in the management of human neoplastic conditions. PMID:19058285

Nanocrystals in compression: unexpected structural phase transition and amorphization due to surface impurities.

PubMed

Liu, Gang; Kong, Lingping; Yan, Jinyuan; Liu, Zhenxian; Zhang, Hengzhong; Lei, Pei; Xu, Tao; Mao, Ho-Kwang; Chen, Bin

2016-06-09

We report an unprecedented surface doping-driven anomaly in the compression behaviors of nanocrystals demonstrating that the change of surface chemistry can lead to an interior bulk structure change in nanoparticles. In the synchrotron-based X-ray diffraction experiments, titania nanocrystals with low concentration yttrium dopants at the surface are found to be less compressible than undoped titania nanocrystals. More surprisingly, an unexpected TiO2(ii) phase (α-PbO2 type) is induced and obvious anisotropy is observed in the compression of yttrium-doped TiO2, in sharp contrast to the compression behavior of undoped TiO2. In addition, the undoped brookite nanocrystals remain with the same structure up to 30 GPa, whereas the yttrium-doped brookite amorphizes above 20 GPa. The abnormal structural evolution observed in yttrium-doped TiO2 does not agree with the reported phase stability of nano titania polymorphs, thus suggesting that the physical properties of the interior of nanocrystals can be controlled by the surface, providing an unconventional and new degree of freedom in search for nanocrystals with novel tunable properties that can trigger applications in multiple areas of industry and provoke more related basic science research.

Synthesis, photophysical analysis, and in vitro cytotoxicity assessment of the multifunctional (magnetic and luminescent) core@shell nanomaterial based on lanthanide-doped orthovanadates

NASA Astrophysics Data System (ADS)

Szczeszak, Agata; Ekner-Grzyb, Anna; Runowski, Marcin; Mrówczyńska, Lucyna; Grzyb, Tomasz; Lis, Stefan

2015-03-01

Rare earths orthovanadates (REVO4) doped with luminescent lanthanide ions (Ln3+) play an important role as promising light-emitting materials. Gadolinium orthovanadate exhibits strong absorption of ultraviolet radiation and as a matrix doped with Eu3+ ions is well known for its efficient and intense red emission, induced by energy transfer from the VO4 3- groups to Eu3+ ions. In the presented study, Fe3O4@SiO2@GdVO4:Eu3+ 5 % nanomaterial was investigated. The core@shell structures demonstrate attractive properties, such as higher thermal stability, enhanced water solubility, increased optical response, higher luminescence, longer decay times, and magnetic properties. Silica coating may protect nanocrystals from the surrounding environment. Therefore, such silica-covered nanoparticles (NPs) are successfully utilized in biomedical research. Multifunctional magnetic nanophosphors are very interesting due to their potential biomedical applications such as magnetic resonance imaging, hyperthermic treatment, and drug delivery. Therefore, the aim of our study was to investigate photophysical, chemical, and biological properties of multifunctional REVO4 doped with Ln3+. Moreover, the studied NPs did not affect erythrocyte sedimentation rate, cell membrane permeability, and morphology of human red blood cells.

Magnetic properties and photovoltaic applications of ZnO:Mn nanocrystals.

PubMed

Zhang, Ying; Han, Fengxiang; Dai, Qilin; Tang, Jinke

2018-05-01

A simple and large-scale synthetic method of Mn doped ZnO (ZnO:Mn) was developed in this work. ZnO:Mn nanocrystals with hexagonal structure were prepared by thermal decomposition of zinc acetate and manganese acetate in the presence of oleylamine and oleic acid with different temperatures, ligand ratios, and Mn doping concentrations. The particle size (47-375 nm) and morphology (hexagonal nanopyramid, hexagonal nanodisk and irregular nanospheres) of ZnO:Mn nanocrystals can be controlled by the ratio of capping ligand, reaction temperature, reaction time and Mn doping concentration. The corresponding optical and magnetic properties were systemically studied and compared. All samples were found to be paramagnetic with antiferromagnetic (AFM) exchange interactions between the Mn moments in the ZnO lattice, which can be affected by the reaction conditions. The quantum dot sensitized solar cells (QDSSCs) were fabricated based on ZnO:Mn nanocrystals and CdS quantum dots, and the device performance affected by Mn doping concentration was also studied and compared. Copyright © 2018 Elsevier Inc. All rights reserved.

Influence of F- on stark splitting of Yb3+ and the thermal expansion of silica glass

NASA Astrophysics Data System (ADS)

Cao, Yabin; Chen, Si; Shao, Chongyun; Yu, Chunlei

2018-06-01

A local phosphate/fluoride environment of Yb3+ was created in silica glass using a multi-step method. The influence of F- on the Stark splitting of Yb3+ in Al3+/P5+/F- co-doped silica glass was studied at room-temperature, in addition to its effect on the thermal expansion performance of the glass matrix. The results indicate that Yb3+ ions in Al3+/P5+/F- co-doped silica glass have a larger Stark splitting energy of 2F7/2 compared to Al3+/P5+ co-doped silica glass. Moreover, a larger integrated absorption cross-section (34.58 pm2 × nm), stimulated emission cross-section (0.63 pm2), and better thermal expansion performance (1.3062 × 10-6 K- at 100 °C) are achieved in Al3+/P5+/F- co-doped silica glass. Finally, different function mechanisms of F- in silica and phosphate glasses were analyzed and the F-Si bond was used to explain the results in silica glass. The combination of low refractive index, large Stark splitting energy of 2F7/2, and small thermal expansion makes Al3+/P5+/F- co-doped silica glass a preferred material for large mode area fibers for high-power laser applications.

Heavy doping effects in high efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.

1984-01-01

Several of the key parameters describing the heavily doped regions of silicon solar cells are examined. The experimentally determined energy gap narrowing and minority carrier diffusivity and mobility are key factors in the investigation.

Opening the band gap of graphene through silicon doping for the improved performance of graphene/GaAs heterojunction solar cells

NASA Astrophysics Data System (ADS)

Zhang, S. J.; Lin, S. S.; Li, X. Q.; Liu, X. Y.; Wu, H. A.; Xu, W. L.; Wang, P.; Wu, Z. Q.; Zhong, H. K.; Xu, Z. J.

2015-12-01

Graphene has attracted increasing interest due to its remarkable properties. However, the zero band gap of monolayered graphene limits it's further electronic and optoelectronic applications. Herein, we have synthesized monolayered silicon-doped graphene (SiG) with large surface area using a chemical vapor deposition method. Raman and X-ray photoelectron spectroscopy measurements demonstrate that the silicon atoms are doped into graphene lattice at a doping level of 2.7-4.5 at%. Electrical measurements based on a field effect transistor indicate that the band gap of graphene has been opened via silicon doping without a clear degradation in carrier mobility, and the work function of SiG, deduced from ultraviolet photoelectron spectroscopy, was 0.13-0.25 eV larger than that of graphene. Moreover, when compared with the graphene/GaAs heterostructure, SiG/GaAs exhibits an enhanced performance. The performance of 3.4% silicon doped SiG/GaAs solar cell has been improved by 33.7% on average, which was attributed to the increased barrier height and improved interface quality. Our results suggest that silicon doping can effectively engineer the band gap of monolayered graphene and SiG has great potential in optoelectronic device applications.Graphene has attracted increasing interest due to its remarkable properties. However, the zero band gap of monolayered graphene limits it's further electronic and optoelectronic applications. Herein, we have synthesized monolayered silicon-doped graphene (SiG) with large surface area using a chemical vapor deposition method. Raman and X-ray photoelectron spectroscopy measurements demonstrate that the silicon atoms are doped into graphene lattice at a doping level of 2.7-4.5 at%. Electrical measurements based on a field effect transistor indicate that the band gap of graphene has been opened via silicon doping without a clear degradation in carrier mobility, and the work function of SiG, deduced from ultraviolet photoelectron

Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices

PubMed Central

Liu, Yang; Deng, Lingxiao; Zhang, Mingliang; Zhang, Shuyuan; Ma, Jing; Song, Peishuai; Liu, Qing; Ji, An; Yang, Fuhua; Wang, Xiaodong

2018-01-01

Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon nanowire (SiNW) have been considered as a promising alternative for thermoelectric applications in order to achieve a higher thermoelectric figure of merit (ZT) than bulk silicon. Here, heavily boron-doped silicon layers and boron etch-stop processes for the fabrication of suspended SiNWs will be discussed in detail, including boron diffusion, electron beam lithography, inductively coupled plasma (ICP) etching and tetramethylammonium hydroxide (TMAH) etch-stop processes. A 7 μm long nanowire structure with a height of 280 nm and a width of 55 nm was achieved, indicating that the proposed technique is useful for nanoscale fabrication. Furthermore, a SiNW thermoelectric device has also been demonstrated, and its performance shows an obvious reduction in thermal conductivity. PMID:29385759

Photocatalytic activity of Cr-doped TiO2 nanoparticles deposited on porous multicrystalline silicon films

PubMed Central

2014-01-01

This work deals with the deposition of Cr-doped TiO2 thin films on porous silicon (PS) prepared from electrochemical anodization of multicrystalline (mc-Si) Si wafers. The effect of Cr doping on the properties of the TiO2-Cr/PS/Si samples has been investigated by means of X-ray diffraction (XRD), atomic force microcopy (AFM), photoluminescence, lifetime, and laser beam-induced current (LBIC) measurements. The photocatalytic activity is carried out on TiO2-Cr/PS/Si samples. It was found that the TiO2-Cr/PS/mc-Si type structure degrades an organic pollutant (amido black) under ultraviolet (UV) light. A noticeable degradation of the pollutant is obtained for a Cr doping of 2 at. %. This result is discussed in light of LBIC and photoluminescence measurements. PMID:25313302

Photocatalytic activity of Cr-doped TiO2 nanoparticles deposited on porous multicrystalline silicon films.

PubMed

Hajjaji, Anouar; Trabelsi, Khaled; Atyaoui, Atef; Gaidi, Mounir; Bousselmi, Latifa; Bessais, Brahim; El Khakani, My Ali

2014-01-01

This work deals with the deposition of Cr-doped TiO2 thin films on porous silicon (PS) prepared from electrochemical anodization of multicrystalline (mc-Si) Si wafers. The effect of Cr doping on the properties of the TiO2-Cr/PS/Si samples has been investigated by means of X-ray diffraction (XRD), atomic force microcopy (AFM), photoluminescence, lifetime, and laser beam-induced current (LBIC) measurements. The photocatalytic activity is carried out on TiO2-Cr/PS/Si samples. It was found that the TiO2-Cr/PS/mc-Si type structure degrades an organic pollutant (amido black) under ultraviolet (UV) light. A noticeable degradation of the pollutant is obtained for a Cr doping of 2 at. %. This result is discussed in light of LBIC and photoluminescence measurements.

Identification of Nanocrystalline Inclusions in Bismuth-Doped Silica Fibers and Preforms.

PubMed

Iskhakova, Liudmila D; Milovich, Filipp O; Mashinsky, Valery M; Zlenko, Alexander S; Borisovsky, Sergey E; Dianov, Evgeny M

2016-10-01

The nature of nanocrystalline inclusions and dopant distribution in bismuth-doped silicate fibers and preforms are studied by scanning and transmission electron microscopy, and energy and wavelength-dispersive X-ray microanalysis. The core compositions are Bi:SiO2, Bi:Al2O3-SiO2, Bi:GeO2-SiO2, Bi:Al2O3-GeO2-SiO2, and Bi:P2O5-Al2O3-GeO2-SiO2. Nanocrystals of metallic Bi, Bi2O3, SiO2, GeO2, and Bi4(GeO4)3 are observed in these glasses. These inclusions can be the reason for the background optical loss in bismuth-doped optical fibers. The bismuth concentration of 0.0048±0.0006 at% is directly measured in aluminosilicate optical fibers with effective laser generation (slope efficiency of 27% at room temperature).

Barcoded materials based on photoluminescent hybrid system of lanthanide ions-doped metal organic framework and silica via ion exchange.

PubMed

Shen, Xiang; Yan, Bing

2016-04-15

A multicolored photoluminescent hybrid system based on lanthanide ions-doped metal organic frameworks/silica composite host has potential in display and barcode applications. By controlling the stoichiometry of the lanthanides via cation exchange, proportional various lanthanide ions are successfully introduced into metal organic frameworks, whose emission intensity is correspondingly proportional to its amount. The resulting luminescent barcodes depend on the lanthanide ions ratios and compositions. Subsequently, the lanthanide ions located in the channels of metal organic frameworks are protected from any interaction with the environment after the modification of silica on the surface. The optical and thermal stability of the hybrid materials are improved for technological application. Copyright © 2016 Elsevier Inc. All rights reserved.

Heavy doping effects in high efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Neugroschel, A.

1985-01-01

The use of a (silicon)/(heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction (or back-surface-field, BSF) structure of silicon solar cells was examined. The results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contact are presented. A reciprocity theorem is presented that relates the short circuit current of a device, induced by a carrier generation source, to the minority carrier Fermi level in the dark. A method for accurate measurement of minority-carrier diffusion coefficients in silicon is described.

Boron doped Si rich oxide/SiO{sub 2} and silicon rich nitride/SiN{sub x} bilayers on molybdenum-fused silica substrates for vertically structured Si quantum dot solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Ziyun, E-mail: z.lin@unsw.edu.au; Wu, Lingfeng; Jia, Xuguang

2015-07-28

Vertically structured Si quantum dots (QDs) solar cells with molybdenum (Mo) interlayer on quartz substrates would overcome current crowding effects found in mesa-structured cells. This study investigates the compatibility between boron (B) doped Si QDs bilayers and Mo-fused silica substrate. Both Si/SiO{sub 2} and Si/SiN{sub x} based QDs bilayers were studied. The material compatibility under high temperature treatment was assessed by examining Si crystallinity, microstress, thin film adhesion, and Mo oxidation. It was observed that the presence of Mo interlayer enhanced the Si QDs size confinement, crystalline fraction, and QDs size uniformity. The use of B doping was preferred comparedmore » to phosphine (PH{sub 3}) doping studied previously in terms of better surface and interface properties by reducing oxidized spots on the film. Though crack formation due to thermal mismatch after annealing remained, methods to overcome this problem were proposed in this paper. Schematic diagram to fabricate full vertical structured Si QDs solar cells was also suggested.« less

Osteogenesis and angiogenesis properties of dental pulp cell on novel injectable tricalcium phosphate cement by silica doped.

PubMed

Su, Ying-Fang; Lin, Chi-Chang; Huang, Tsui-Hsien; Chou, Ming-Yung; Yang, Jaw-Ji; Shie, Ming-You

2014-09-01

β-Tricalcium phosphate (β-TCP) is an osteoconductive material in clinical. In this study, we have doped silica (Si) into β-TCP and enhanced its bioactive and osteostimulative properties. To check its effectiveness, a series of Si-doped with different ratios were prepared to make new bioactive and biodegradable biocomposites for bone repair. Formation of the diametral tensile strength, ions released and weight loss of cements was considered after immersion. In addition, we also examined the behavior of human dental pulp cells (hDPCs) cultured on Si-doped β-TCP cements. The results showed that setting time and injectability of the Si-doped β-TCP cements were decreased as the Si content was increased. At the end of the immersion point, weight losses of 30.1%, 36.9%, 48.1%, and 55.3% were observed for the cement doping 0%, 10%, 20%, and 30% Si into β-TCP cements, respectively. In vitro cell experiments show that the Si-rich cements promote human dental pulp cell (hDPC) proliferation and differentiation. However, when the Si-doped in the cement is more than 20%, the amount of cells and osteogenesis protein of hDPCs was stimulated by Si released from Si-doped β-TCP cements. The degradation of β-TCP and osteogenesis of Si gives a strong reason to believe that these Si-doped β-TCP cements may prove to be promising bone repair materials. Copyright © 2014 Elsevier B.V. All rights reserved.

Optimal design and fabrication of ring resonator composed of Ge02-doped silica waveguides for IOG

NASA Astrophysics Data System (ADS)

Guo, Lijun; Shi, Bangren; Chen, Chen; Lv, Hao; Zhao, Zhenming; Zhao, Meng

2009-07-01

The ring resonator is the core sensing element in the resonant integration optical gyroscope (IOG) . Its performances influence the minimum resolution and the error items of gyroscope directly and it is the key of the design and manufacturing. This paper presents optimal design of ring resonator composed of Ge02 -doped silica waveguides fabricated on silicon substrates using wide angle beam propagation method (WA-BPM). The characteristic of the light propagating across the ring resonator is analyzed. According to the design results, we succeed in fabricating the ring resonator by Plasma Enhanced Chemical Vapor Deposition (PECVD) method and Reactive Ion Etching (RIE) technology. In order to characterize the ring resonator, an optical measurement setup is built, fiber laser line-width is 50 kHz, detector responsibility is 0.95A/W and integral time is 10s. By testing, propagation loss and total loss of ring resonator are 0.02dB/cm and 0.1dB/circuit respectively. Observed from the resonance curve, a finesse of 12.5.

Silicon Biomineralization on the Earth

NASA Astrophysics Data System (ADS)

Mitra, D.; Das, S.

2010-12-01

Silicon biomineralization in nature occurs as either ‘biologically controlled biomineralization’; where silicon is precipitated to serve some physiological purpose; or as ‘biologically induced biomineralization’; where mineralization occurs as a byproduct of cell’s metabolic activity or through its interactions with the environment. In biologically controlled mineralization, there is an overwhelming control of the microorganism on nucleation and mineral growth stage. There is delineation of space (as intracellular silica deposition vesicle (SDV)) for the locus of mineralization, which is sealed off from the external environment. Then silicate is sequestered and transferred to the mineralization site by energy driven (energy may be derived from photosynthesis or from glucose metabolism) pump mechanism in presence of specific transporter protein. In biologically induced biomineralization, first, there is silicon nucleation, which leads to the spontaneous growth of some critical nuclei which are resistant to rapid dissolution. Then growth of these silicon nuclei (if the ions are same) or precipitation over the nuclei (if the ions are different) occurs. Ultimately the initial amorphous phase is converted into a crystalline phase. Silicon deposition may also occur due to Ostwald ripening. If silica concentration is more than the solubility of amorphous silica (at 100oC ~ 380 mg L-1), monomeric silica [Si(OH)4] is formed which is converted into oligomers (dimers, trimers and tetramers) by polymerization. Ultimately large polymers of silanol (-Si-OH-) and siloxane (-Si-O-Si-) are formed. Silicification then occurs by hydrogen bonding with neutrally charged polysaccharides, by cation bridging with the cell wall or by direct electrostatic interactions with cationic amino groups present in protein-rich biofilms. Diatoms are the world’s largest contributor to biomineralization of silicon. Diatom silicon transporters (SITs) are membrane associated proteins that

Double stabilization of nanocrystalline silicon: a bonus from solvent

NASA Astrophysics Data System (ADS)

Kolyagin, Y. G.; Zakharov, V. N.; Yatsenko, A. V.; Paseshnichenko, K. A.; Savilov, S. V.; Aslanov, L. A.

2016-01-01

Double stabilization of the silicon nanocrystals was observed for the first time by 29Si and 13C MAS NMR spectroscopy. The role of solvent, 1,2-dimethoxyethane (glyme), in formation and stabilization of silicon nanocrystals as well as mechanism of modification of the surface of silicon nanocrystals by nitrogen-heterocyclic carbene (NHC) was studied in this research. It was shown that silicon nanocrystals were stabilized by the products of cleavage of the C-O bonds in ethers and similar compounds. The fact of stabilization of silicon nanoparticles with NHC ligands in glyme was experimentally detected. It was demonstrated that MAS NMR spectroscopy is rather informative for study of the surface of silicon nanoparticles but it needs very pure samples.

Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yerci, S.; Serincan, U.; Dogan, I.

2006-10-01

Silicon nanocrystals, average sizes ranging between 3 and 7 nm, were formed in sapphire matrix by ion implantation and subsequent annealing. Evolution of the nanocrystals was detected by Raman spectroscopy and x-ray diffraction (XRD). Raman spectra display that clusters in the matrix start to form nanocrystalline structures at annealing temperatures as low as 800 deg. C in samples with high dose Si implantation. The onset temperature of crystallization increases with decreasing dose. Raman spectroscopy and XRD reveal gradual transformation of Si clusters into crystalline form. Visible photoluminescence band appears following implantation and its intensity increases with subsequent annealing process. Whilemore » the center of the peak does not shift, the intensity of the peak decreases with increasing dose. The origin of the observed photoluminescence is discussed in terms of radiation induced defects in the sapphire matrix.« less

Direct observation of narrow mid-infrared plasmon linewidths of single metal oxide nanocrystals

DOE PAGES

Johns, Robert W.; Bechtel, Hans A.; Runnerstrom, Evan L.; ...

2016-05-13

Infrared-responsive doped metal oxide nanocrystals are an emerging class of plasmonic materials whose localized surface plasmon resonances (LSPR) can be resonant with molecular vibrations. This presents a distinctive opportunity to manipulate light-matter interactions to redirect chemical or spectroscopic outcomes through the strong local electric fields they generate. Here we report a technique for measuring single nanocrystal absorption spectra of doped metal oxide nanocrystals, revealing significant spectral inhomogeneity in their mid-infrared LSPRs. Our analysis suggests dopant incorporation is heterogeneous beyond expectation based on a statistical distribution of dopants. The broad ensemble linewidths typically observed in these materials result primarily from sammore » ple heterogeneity and not from strong electronic damping associated with lossy plasmonic materials. In fact, single nanocrystal spectra reveal linewidths as narrow as 600 cm -1 in aluminium-doped zinc oxide, a value less than half the ensemble linewidth and markedly less than homogeneous linewidths of gold nanospheres.« less

Comprehensive studies of the Ag+ effect on borosilicate glass ceramics containing Ag nanoparticles and Er-doped hexagonal NaYF4 nanocrystals: morphology, structure, and 2.7 μm emission

NASA Astrophysics Data System (ADS)

Liu, Qunhuo; Tian, Ying; Tang, Wenhua; Jing, Xufeng; Zhang, Junjie; Xu, Shiqing

2018-05-01

In this work, we have performed a comprehensive investigation of the Ag+ concentration effect on the morphological, thermal, structural, and mid-infrared emission properties of novel oxyfluoride borosilicate glasses and glass ceramics containing both Ag nanoparticles and erbium-doped hexagonal NaYF4 nanocrystals. The effect of Ag+ ions on the glass forming and crystallization processes was discussed in detail by glass structural analysis. It was found that the Ag+ concentration can affect the distribution of Na+ ion and bridge oxygen in boron-rich and silicon-rich phases, which induced the transformation between BO3 triangles and BO4 tetrahedra during crystallization process. In addition, there was a turning point when the doped Ag+ ion concentration reached its solubility in the borosilicate glass. Furthermore, the enhancement of the 2.7 μm emission and the reduction of the lifetime of the 4I13/2 level were observed both in glasses and in glass ceramics, and its origin was revealed by qualitative and quantitative analyses of the Er3+-Ag nanoparticles (localized electric field enhancement) and Er3+-Er3+ (nonradiative resonance energy transfer) interactions within glasses and glass ceramics. Moreover, the high lifetime of the 4I11/2 level (2.12 ms) and the peak emission cross section in 2.7 μm (6.8×10-21 cm2) suggested that the prepared glass ceramics have promising mid-infrared laser applications.

A DFT investigation on group 8B transition metal-doped silicon carbide nanotubes for hydrogen storage application

NASA Astrophysics Data System (ADS)

Tabtimsai, Chanukorn; Ruangpornvisuti, Vithaya; Tontapha, Sarawut; Wanno, Banchob

2018-05-01

The binding of group 8B transition metal (TMs) on silicon carbide nanotubes (SiCNT) hydrogenated edges and the adsorption of hydrogen molecule on the pristine and TM-doped SiCNTs were investigated using the density functional theory method. The B3LYP/LanL2DZ method was employed in all calculations for the considered structural, adsorption, and electronic properties. The Os atom doping on the SiCNT is found to be the strongest binding. The hydrogen molecule displays a weak interaction with pristine SiCNT, whereas it has a strong interaction with TM-doped SiCNTs in which the Os-doped SiCNT shows the strongest interaction with the hydrogen molecule. The improvement in the adsorption abilities of hydrogen molecule onto TM-doped SiCNTs is due to the protruding structure and the induced charge transfer between TM-doped SiCNT and hydrogen molecule. These observations point out that TM-doped SiCNTs are highly sensitive toward hydrogen molecule. Moreover, the adsorptions of 2-5 hydrogen molecules on TM-doped SiCNT were also investigated. The maximum storage number of hydrogen molecules adsorbed on the first layer of TM-doped SiCNTs is 3 hydrogen molecules. Therefore, TM-doped SiCNTs are suitable to be sensing and storage materials for hydrogen gas.

Optical study of Erbium-doped-porous silicon based planar waveguides

NASA Astrophysics Data System (ADS)

Najar, A.; Ajlani, H.; Charrier, J.; Lorrain, N.; Haesaert, S.; Oueslati, M.; Haji, L.

2007-06-01

Planar waveguides were formed from porous silicon layers obtained on P + substrates. These waveguides were then doped by erbium using an electrochemical method. Erbium concentration in the range 2.2-2.5 at% was determined by energy dispersive X-ray (EDX) analysis performed on SEM cross sections. The refractive index of layers was studied before and after doping and thermal treatments. The photoluminescence of Er 3+ ions in the IR range and the decay curve of the 1.53 μm emission peak were studied as a function of the excitation power. The value of excited Er density was equal to 0.07%. Optical loss contributions were analyzed on these waveguides and the losses were equal to 1.1 dB/cm at 1.55 μm after doping.

The interplay of shape and crystalline anisotropies in plasmonic semiconductor nanocrystals

DOE PAGES

Kim, Jongwook; Agrawal, Ankit; Krieg, Franziska; ...

2016-05-16

Doped semiconductor nanocrystals are an emerging class of materials hosting localized surface plasmon resonance (LSPR) over a wide optical range. Studies so far have focused on tuning LSPR frequency by controlling the dopant and carrier concentrations in diverse semiconductor materials. However, the influence of anisotropic nanocrystal shape and of intrinsic crystal structure on LSPR remain poorly explored. Here, we illustrate how these two factors collaborate to determine LSPR characteristics in hexagonal cesium-doped tungsten oxide nanocrystals. The effect of shape anisotropy is systematically analyzed via synthetic control of nanocrystal aspect ratio (AR), from disks to nanorods. We demonstrate the dominant influencemore » of crystalline anisotropy, which uniquely causes strong LSPR band-splitting into two distinct peaks with comparable intensities. Modeling typically used to rationalize particle shape effects is refined by taking into account the anisotropic dielectric function due to crystalline anisotropy, thus fully accounting for the AR-dependent evolution of multiband LSPR spectra. Furthermore, this new insight into LSPR of semiconductor nanocrystals provides a novel strategy for an exquisite tuning of LSPR line shape.« less

APTES-Terminated ultrasmall and iron-doped silicon nanoparticles as X-Ray dose enhancer for radiation therapy.

PubMed

Klein, Stefanie; Wegmann, Marc; Distel, Luitpold V R; Neuhuber, Winfried; Kryschi, Carola

2018-04-15

Silicon nanoparticles with sizes between were synthesized through wet-chemistry procedures using diverse phase transfer reagents. On the other hand, the preparation of iron-doped silicon nanoparticles was carried out using the precursor Na 4 Si 4 containing 5% Fe. Biocompatibility of all silicon nanoparticle samples was achieved by surface-stabilizing with (3-aminopropyl)triethoxysilane. These surface structures provided positive surface charges which facilitated electrostatic binding to the negatively charged biological membranes. The mode of interaction with membranes, being either incorporation or just attachment, was found to depend on the nanoparticle size. The smallest silicon nanoparticles (ca. 1.5 nm) were embedded in the mitochondrial membrane in MCF-7 cells. When interacting with X-rays these silicon nanoparticles were observed to enhance the superoxide formation upon depolarizing the mitochondrial membrane. X-ray irradiation of MCF-7 cells loaded with the larger silicon nanoparticles was shown to increase the intracellular singlet oxygen generation. The doping of the silicon nanoparticles with iron led to additional production of hydroxyl radicals via the Fenton reaction. Copyright © 2018 Elsevier Inc. All rights reserved.

Biogenic porous silica and silicon sourced from Mexican Giant Horsetail (Equisetum myriochaetum) and their application as supports for enzyme immobilization.

PubMed

Sola-Rabada, Anna; Sahare, Padma; Hickman, Graham J; Vasquez, Marco; Canham, Leigh T; Perry, Carole C; Agarwal, Vivechana

2018-06-01

Porous silica-based materials are attractive for biomedical applications due to their biocompatibility and biodegradable character. In addition, inorganic supports such as porous silicon are being developed due to integrated circuit chip compatibility and tunable properties leading to a wide range of multidisciplinary applications. In this contribution, biosilica extracted from a rarely studied plant material (Equisetum Myriochaetum), its conversion to silicon and the potential for both materials to be used as supports for enzyme immobilization are investigated. E. myriochaetum was subject to conventional acid digestion to extract biogenic silica with a% yield remarkably higher (up to 3 times) than for other Equisetum sp. (i.e. E. Arvense). The surface area of the isolated silica was ∼400 m 2 /g, suitable for biotechnological applications. Biogenic silicon was obtained by magnesiothermic reduction. The materials were characterized by SEM-EDX, XRD, FT-IR, ICP-OES, TGA and BET analysis and did not contain significant levels of class 1 heavy elements (such as Pb, Cd, Hg and As). Two commercial peroxidases, horseradish peroxidase (HRP) and Coprinus cinereus peroxidase (CiP) were immobilized onto the biogenic materials using three different functionalization routes: (A) carbodiimide, (B) amine + glutaraldehyde and (C) amine + carbodiimide. Although both biogenic silica and porous silicon could be used as supports differences in behaviour were observed for the two enzymes. For HRP, loading onto biogenic silica via the glutaraldehyde immobilization technique (route B) was most effective. The loading of CiP showed a much higher peroxidase activity onto porous silicon than silica functionalized by the carbodiimide method (route A). From the properties of the extracted materials obtained from Equisetum Myriochaetum and the immobilization results observed, these materials appear to be promising for industrial and biomedical applications. Copyright © 2018 Elsevier

Reduction of Acute Inflammatory Effects of Fumed Silica Nanoparticles in the Lung by Adjusting Silanol Display through Calcination and Metal Doping

PubMed Central

Sun, Bingbing; Pokhrel, Suman; Dunphy, Darren R.; Zhang, Haiyuan; Ji, Zhaoxia; Wang, Xiang; Wang, Meiying; Liao, Yu-Pei; Chang, Chong Hyun; Dong, Juyao; Li, Ruibin; Mädler, Lutz; Brinker, C. Jeffrey; Nel, André E.; Xia, Tian

2015-01-01

The production of pyrogenic (fumed) silica is increasing worldwide at a 7% annual growth rate, including expanded use in food, pharmaceuticals and other industrial products. Synthetic amorphous silica, including fumed silica, has been generally recognized as safe (GRAS) for use in food products by the Food and Drug Administration (FDA). However, emerging evidence from experimental studies now suggests that fumed silica could be hazardous due to its siloxane ring structure, high silanol density, and “string-of-pearl-like” aggregate structure, which could combine to cause membrane disruption, generation of reactive oxygen species, pro-inflammatory effects, and liver fibrosis. Based on this structure-activity analysis (SAA), we investigated whether calcination and rehydration of fumed silica changes its hazard potential in the lung due to an effect on silanol density display. This analysis demonstrated that the accompanying change in surface reactivity could indeed impact cytokine production in macrophages and acute inflammation in the lung, in a manner that is dependent on siloxane ring reconstruction. Confirmation of this SAA in vivo, prompted us to consider safer design of fumed silica properties by titanium (Ti) and aluminum (Al) doping (0–7%), using flame spray pyrolysis (FSP). Detailed characterization revealed that increased Ti and Al doping could reduce surface silanol density and expression of three-membered siloxane rings, leading to dose-dependent reduction in hydroxyl radical generation, membrane perturbation, potassium efflux, NLRP3 inflammasome activation and cytotoxicity in THP-1 cells. The reduction of NLRP3 inflammasome activation was also confirmed in bone marrow-derived macrophages (BMDMs). Ti- and to a lesser extent Al-doping, also ameliorated acute pulmonary inflammation, demonstrating the possibility of a safer design approach for fumed silica, should that be required for specific use circumstances. PMID:26200133

Nitrogen doped silicon-carbon multilayer protective coatings on carbon obtained by TVA method

NASA Astrophysics Data System (ADS)

Ciupina, Victor; Vasile, Eugeniu; Porosnicu, Corneliu; Lungu, Cristian P.; Vladoiu, Rodica; Jepu, Ionut; Mandes, Aurelia; Dinca, Virginia; Caraiane, Aureliana; Nicolescu, Virginia; Cupsa, Ovidiu; Dinca, Paul; Zaharia, Agripina

2017-08-01

Protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, were obtained by Thermionic Vacuum Arc (TVA) method. The initial carbon layer having a thickness of 100nm has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions, each having a thickness of 40nm. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV . The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. Oxidation protection of carbon is based on the reaction between oxygen and silicon carbide, resulting in SiO2, SiO and CO2, and also by reaction involving N, O and Si, resulting in silicon oxynitride (SiNxOy) with a continuously variable composition, and on the other hand, since nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, 80% silver filled two-component epoxy-based glue ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. The experimental data show the increase of conductivity with the increase of the nitrogen content. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.

Impact of carrier doping on electrical properties of laser-induced liquid-phase-crystallized silicon thin films for solar cell application

NASA Astrophysics Data System (ADS)

Umishio, Hiroshi; Matsui, Takuya; Sai, Hitoshi; Sakurai, Takeaki; Matsubara, Koji

2018-02-01

Large-grain-size (>1 mm) liquid-phase-crystallized silicon (LPC-Si) films with a wide range of carrier doping levels (1016-1018 cm-3 either of the n- or p-type) were prepared by irradiating amorphous silicon with a line-shaped 804 nm laser, and characterized for solar cell applications. The LPC-Si films show high electron and hole mobilities with maximum values of ˜800 and ˜200 cm2 V-1 s-1, respectively, at a doping level of ˜(2-4) × 1016 cm-3, while their carrier lifetime monotonically increases with decreasing carrier doping level. A grain-boundary charge-trapping model provides good fits to the measured mobility-carrier density relations, indicating that the potential barrier at the grain boundaries limits the carrier transport in the lowly doped films. The open-circuit voltage and short-circuit current density of test LPC-Si solar cells depend strongly on the doping level, peaking at (2-5) × 1016 cm-3. These results indicate that the solar cell performance is governed by the minority carrier diffusion length for the highly doped films, while it is limited by majority carrier transport as well as by device design for the lowly doped films.

Near-Unity Internal Quantum Efficiency of Luminescent Silicon Nanocrystals with Ligand Passivation.

PubMed

Sangghaleh, Fatemeh; Sychugov, Ilya; Yang, Zhenyu; Veinot, Jonathan G C; Linnros, Jan

2015-07-28

Spectrally resolved photoluminescence (PL) decays were measured for samples of colloidal, ligand-passivated silicon nanocrystals. These samples have PL emission energies with peak positions in the range ∼1.4-1.8 eV and quantum yields of ∼30-70%. Their ensemble PL decays are characterized by a stretched-exponential decay with a dispersion factor of ∼0.8, which changes to an almost monoexponential character at fixed detection energies. The dispersion factors and decay rates for various detection energies were extracted from spectrally resolved curves using a mathematical approach that excluded the effect of homogeneous line width broadening. Since nonradiative recombination would introduce a random lifetime variation, leading to a stretched-exponential decay for an ensemble, we conclude that the observed monoexponential decay in size-selected ensembles signifies negligible nonradiative transitions of a similar strength to the radiative one. This conjecture is further supported as extracted decay rates agree with radiative rates reported in the literature, suggesting 100% internal quantum efficiency over a broad range of emission wavelengths. The apparent differences in the quantum yields can then be explained by a varying fraction of "dark" or blinking nanocrystals.

Photoluminescence studies on Cd(1-x)Zn(x)S:Mn2+ nanocrystals.

PubMed

Sethi, Ruchi; Kumar, Lokendra; Pandey, A C

2009-09-01

Highly monodispersed, undoped and doped with Mn2+, binary and ternary (CdS, ZnS, Cd(1-x)Zn(x)S) compound semiconductor nanocrystals have been synthesized by co-precipitation method using citric acid as a stabilizer. As prepared sample are characterized by X-ray diffraction, Small angle X-ray scattering, Transmission electron microscope, Optical absorption and Photoluminescence spectroscopy, for their optical and structural properties. X-ray diffraction, Small angle X-ray scattering and Transmission electron microscope results confirm the preparation of monodispersed nanocrystals. Photoluminescence studies show a significant blue shift in the wavelength with an increasing concentration of Zn in alloy nanocrystals.

Probing the formation of silicon nano-crystals (Si-ncs) using variable energy positron annihilation spectroscopy

NASA Astrophysics Data System (ADS)

Knights, A. P.; Bradley, J. D. B.; Hulko, O.; Stevanovic, D. V.; Edwards, C. J.; Kallis, A.; Coleman, P. G.; Crowe, I. F.; Halsall, M. P.; Gwilliam, R. M.

2011-01-01

We describe preliminary results from studies of the formation of silicon nano-crystals (Si-ncs) embedded in stoichiometric, thermally grown SiO2 using Variable Energy Positron Annihilation Spectroscopy (VEPAS). We show that the VEPAS technique is able to monitor the introduction of structural damage. In SiO2 through the high dose Si+ ion implantation required to introduce excess silicon as a precursor to Si-nc formation. VEPAS is also able to characterize the rate of the removal of this damage with high temperature annealing, showing strong correlation with photoluminescence. Finally, VEPAS is shown to be able to selectively probe the interface between Si-ncs and the host oxide. Introduction of hydrogen at these interfaces suppresses the trapping of positrons at the interfaces.

Gold nanorods-silicone hybrid material films and their optical limiting property

NASA Astrophysics Data System (ADS)

Li, Chunfang; Qi, Yanhai; Hao, Xiongwen; Peng, Xue; Li, Dongxiang

2015-10-01

As a kind of new optical limiting materials, gold nanoparticles have optical limiting property owing to their optical nonlinearities induced by surface plasmon resonance (SPR). Gold nanorods (GNRs) possess transversal SPR absorption and tunable longitudinal SPR absorption in the visible and near-infrared region, so they can be used as potential optical limiting materials against tunable laser pulses. In this letter, GNRs were prepared using seed-mediated growth method and surface-modified by silica coating to obtain good dispersion in polydimethylsiloxane prepolymers. Then the silicone rubber films doped with GNRs were prepared after vulcanization, whose optical limiting property and optical nonlinearity were investigated. The silicone rubber samples doped with more GNRs were found to exhibit better optical limiting performance.

Physical properties of heavily boron doped silicon

NASA Astrophysics Data System (ADS)

Grockowiak, Audrey; Marcenat, Christophe; Klein, Thierry; Prudon, Gilles; Dubois, Christiane; Kociniewski, Thierry; Debarre, Dominique

2012-02-01

The discovery of superconductivity (SC) in heavily boron doped silicon in 2006 by [1] occurred shortly after diamond in 2004 by [2]. However, the SC in these 2 materials occurs differently. For diamond, the SC is obtained for a boron concentration close to the metal-insulator transition (MIT), while for silicon, the onset of superconductivity is obtained well above the MIT threshold. The aim of this study is to determine the influence of different parameters that impact the SC, such as the doping concentration nB, or the thickness of the layer. Interpolation between resistivity measurements of Tc(nB) and ab initio calculations of the electron phonon coupling λ(nB) showed a complete mismatch of the dependency of λ(Tc) with the BSC MacMillan exponential law. The results obtained suggest rather a power law dependence such as λ α Tc^2. This dependency suggests a fractal dimension of the superconducting wave function as reported by Feigel'man et al. [3]. [4pt] [1] E. Bustarret et al., Nature (London) 444, 465 (2006).[0pt] [2] E. Ekimov et al. (2004). Nature 428: 542[0pt] [3] Feigel'man et al., arXiv:1002.0859

Pulsed energy synthesis and doping of silicon carbide

DOEpatents

Truher, J.B.; Kaschmitter, J.L.; Thompson, J.B.; Sigmon, T.W.

1995-06-20

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate is disclosed, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27--730 C is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including HETEROJUNCTION-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Pulsed energy synthesis and doping of silicon carbide

DOEpatents

Truher, Joel B.; Kaschmitter, James L.; Thompson, Jesse B.; Sigmon, Thomas W.

1995-01-01

A method for producing beta silicon carbide thin films by co-depositing thin films of amorphous silicon and carbon onto a substrate, whereafter the films are irradiated by exposure to a pulsed energy source (e.g. excimer laser) to cause formation of the beta-SiC compound. Doped beta-SiC may be produced by introducing dopant gases during irradiation. Single layers up to a thickness of 0.5-1 micron have been produced, with thicker layers being produced by multiple processing steps. Since the electron transport properties of beta silicon carbide over a wide temperature range of 27.degree.-730.degree. C. is better than these properties of alpha silicon carbide, they have wide application, such as in high temperature semiconductors, including hetero-junction bipolar transistors and power devices, as well as in high bandgap solar arrays, ultra-hard coatings, light emitting diodes, sensors, etc.

Singlet Oxygen Generation Mediated By Silicon Nanocrystal Assemblies

DTIC Science & Technology

2011-01-01

Lattice fringes in Fig.3 d correspond to the (111) atomic planes of Si nanocrystals. Length scales are indicated. Downscaling of the stain etched PSi...intensity of 1W/cm2 in a time scale of a few hours a monolayer of oxygen is formed on the surface of Si nanocrystals. Fig. 8. Infrared absorption...solution. Fig. 10. PL intensity as a function of continuously prolonged etching of Si powder. Inset: PL suppression level (can be scaled as singlet

Measurement of carrier transport and recombination parameter in heavily doped silicon

NASA Technical Reports Server (NTRS)

Swanson, Richard M.

1986-01-01

The minority carrier transport and recombination parameters in heavily doped bulk silicon were measured. Both Si:P and Si:B with bulk dopings from 10 to the 17th and 10 to the 20th power/cu cm were studied. It is shown that three parameters characterize transport in bulk heavily doped Si: the minority carrier lifetime tau, the minority carrier mobility mu, and the equilibrium minority carrier density of n sub 0 and p sub 0 (in p-type and n-type Si respectively.) However, dc current-voltage measurements can never measure all three of these parameters, and some ac or time-transient experiment is required to obtain the values of these parameters as a function of dopant density. Using both dc electrical measurements on bipolar transitors with heavily doped base regions and transients optical measurements on heavily doped bulk and epitaxially grown samples, lifetime, mobility, and bandgap narrowing were measured as a function of both p and n type dopant densities. Best fits of minority carrier mobility, bandgap narrowing and lifetime as a function of doping density (in the heavily doped range) were constructed to allow accurate modeling of minority carrier transport in heavily doped Si.

Synthesis of fluorine- doped silica-coating by fluorosilane nanofluid to ultrahydrophobic and ultraoleophobic surface

NASA Astrophysics Data System (ADS)

Saboori, R.; Azin, R.; Osfouri, Sh; Sabbaghi, S.; Bahramian, A.

2017-10-01

Liquid repellency treatment has many applications in various sectors including oil and gas reservoirs and self-cleaning surfaces. In this study, effect of silica, fluorine-doped silica and fluorine-doped silica-coating by fluorosilane nanofluid on ultrahydrophobic and ultraoleophobic surface of carbonate and sandstone rock were investigated. The nanoparticles were synthesized by sol-gel method and characterized using XRD, FTIR, FESEM and DLS and nanofluid was prepared. F-SiO2-F nanoparticle was adsorbed on surface of rocks and confirmed by FESEM and EDXA. Effect of nanofluid on wettability was investigated by measuring contact angles of water, crude oil, condensate, n-decane and ethylene glycol in air and stability of ultrahydrophobic and ultraoleophobic was investigated. Results show that nanofluid (0.05 wt% of nanoparticle) changes contact angle from strongly liquid-wet to strongly gas-wet in all systems. The original contact angle of water, crude oil, condensate, n-decane and ethylene glycol were 37.95°, 0°, 0°, 0° and 0° for carbonate rock and 40.30°, 0°, 0°, 0° and 0° for sandstone rock which altered to 146.47°, 145.59°, 138.24°, 139.06° and 146.52° for carbonate rock and 160.01°, 151.40°, 131.85°, 140.27° and 151.70° for sandstone rock after treatment. The ultraoleophobic and ultrahydrophobic stability were  >48 h and 120 min.

Method for forming silicon on a glass substrate

DOEpatents

McCarthy, Anthony M.

1995-01-01

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics.

Method for forming silicon on a glass substrate

DOEpatents

McCarthy, A.M.

1995-03-07

A method by which single-crystal silicon microelectronics may be fabricated on glass substrates at unconventionally low temperatures. This is achieved by fabricating a thin film of silicon on glass and subsequently forming the doped components by a short wavelength (excimer) laser doping procedure and conventional patterning techniques. This method may include introducing a heavily boron doped etch stop layer on a silicon wafer using an excimer laser, which permits good control of the etch stop layer removal process. This method additionally includes dramatically reducing the remaining surface roughness of the silicon thin films after etching in the fabrication of silicon on insulator wafers by scanning an excimer laser across the surface of the silicon thin film causing surface melting, whereby the surface tension of the melt causes smoothing of the surface during recrystallization. Applications for this method include those requiring a transparent or insulating substrate, such as display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard and high temperature electronics. 15 figs.

Formation of size controlled Ge nanocrystals in Er-doped ZnO matrix and their enhancement effect in 1.54 μm photoluminescence

NASA Astrophysics Data System (ADS)

Fan, Ranran; Lu, Fei; Li, Kaikai; Liu, Kaijing

2018-06-01

This paper investigated the controllable growth of Ge nanocrystal (nc-Ge) in (Ge, Er) co-doped ZnO film, and the relationship between the size of nc-Ge and the enhancement of Er3+ related 1.54 μm photoluminescence (PL). It was found that nc-Ge with size of ∼5 nm was formed by annealing treatment at 600 °C. The intensity of 1.54 μm was significantly enhanced due to the existence of nc-Ge and showed an obvious dependence on nanocrystal size. The size of nc-Ge increased with the increase of the annealing temperature, and the nanocrystal with size of ∼5 nm made the most obvious contribution to PL enhancement. Prolonging annealing time could improve the crystalline structure of ZnO matrix but had no effect on PL intensity. The experimental results showed that the PL enhancement was mainly achieved by transferring the energy to Er through the resonance absorption of nc-Ge.

Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

NASA Technical Reports Server (NTRS)

Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.; Terhune, R. W.; Fattahi, Masoud; Tseng, Hsin-Fu

1992-01-01

Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

On the role of spatial position of bridged oxygen atoms as surface passivants on the ground-state gap and photo-absorption spectrum of silicon nano-crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nazemi, Sanaz; Soleimani, Ebrahim Asl; Pourfath, Mahdi, E-mail: pourfath@ut.ac.ir, E-mail: pourfath@iue.tuwien.ac.at

2015-11-28

Silicon nano-crystals (NCs) are potential candidates for enhancing and tuning optical properties of silicon for optoelectronic and photo-voltaic applications. Due to the high surface-to-volume ratio, however, optical properties of NC result from the interplay of quantum confinement and surface effects. In this work, we show that both the spatial position of surface terminants and their relative positions have strong effects on NC properties as well. This is accomplished by investigating the ground-state HOMO-LUMO band-gap, the photo-absorption spectra, and the localization and overlap of HOMO and LUMO orbital densities for prototype ∼1.2 nm Si{sub 32–x}H{sub 42–2x}O{sub x} hydrogenated silicon NC with bridgedmore » oxygen atoms as surface terminations. It is demonstrated that the surface passivation geometry significantly alters the localization center and thus the overlap of frontier molecular orbitals, which correspondingly modifies the electronic and optical properties of NC.« less

Charge Transfer from n-Doped Nanocrystals: Mimicking Intermediate Events in Multielectron Photocatalysis.

PubMed

Wang, Junhui; Ding, Tao; Wu, Kaifeng

2018-06-12

In multielectron photocatalytic reactions, an absorbed photon triggers charge transfer from the light-harvester to the attached catalyst, leaving behind a charge of the opposite sign in the light-harvester. If this charge is not scavenged before the absorption of the following photons, photoexcitation generates not neutral but charged excitons from which the extraction of charges should become more difficult. This is potentially an efficiency-limiting intermediate event in multielectron photocatalysis. To study the charge dynamics in this event, we doped CdS nanocrystal quantum dots (QDs) with an extra electron and measured hole transfer from n-doped QDs to attached acceptors. We find that the Auger decay of charged excitons lowers the charge separation yield to 68.6% from 98.4% for neutral excitons. In addition, the hole transfer rate in the presence of two electrons (1290 ps) is slower than that in the presence one electron (776 ps), and the recombination rate of charge separated states is about 2 times faster in the former case. This model study provides important insights into possible efficiency-limiting intermediate events involved in photocatalysis.

Silane Modification of Glass and Silica Surfaces to Obtain Equally Oil-Wet Surfaces in Glass-Covered Silicon Micromodel Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grate, Jay W.; Warner, Marvin G.; Pittman, Jonathan W.

2013-08-05

The wettability of silicon and glass surfaces can be modified by silanization. However, similar treatments of glass and silica surfaces using the same silane do not necessarily yield the same wettability as determined by the oil-water contact angle. In this technical note, surface cleaning pretreatments were investigated to determine conditions that would yield oil-wet surfaces on glass with similar wettability to silica surfaces treated with the same silane, and both air-water and oil-water contact angles were determined. Air-water contact angles were less sensitive to differences between silanized silica and glass surfaces, often yielding similar values while the oil-water contact anglesmore » were quite different. Borosilicate glass surfaces cleaned with standard cleaning solution 1 (SC1) yield intermediate-wet surfaces when silanized with hexamethyldisilazane, while the same cleaning and silanization yields oil-wet surfaces on silica. However, cleaning glass in boiling concentrated nitric acid creates a surface that can be silanized to obtain oil-wet surfaces using HDMS. Moreover, this method is effective on glass with prior thermal treatment at an elevated temperature of 400oC. In this way, silica and glass can be silanized to obtain equally oil-wet surfaces using HMDS. It is demonstrated that pretreatment and silanization is feasible in silicon-silica/glass micromodels previously assembled by anodic bonding, and that the change in wettability has a significant observable effect on immiscisble fluid displacements in the pore network.« less

Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huh, Chul, E-mail: chuh@etri.re.kr; Kim, Tae-Youb; Ahn, Chang-Geun

2015-05-25

We report the strong visible light emission from silicon (Si) nanocrystals (NCs) embedded in a Si carbide (SiC) film. Compared to Si NC light-emitting diode (LED) by employing the Si nitride (SiN{sub x}) film as a surrounding matrix, the turn-on voltage of the Si NC LED with the SiC film was significantly decreased by 4 V. This was attributed to a smaller barrier height for injecting the electrons into the Si NCs due to a smaller band gap of SiC film than a SiN{sub x} film. The electroluminescence spectra increases with increasing forward voltage, indicating that the electrons are efficiently injectedmore » into the Si NCs in the SiC film. The light output power shows a linear increase with increasing forward voltage. The light emission originated from the Si NCs in a SiC film was quite uniform. The power efficiency of the Si NC LED with the SiC film was 1.56 times larger than that of the Si NC LED with the SiN{sub x} film. The Si NCs in a SiC film show unique advantages and are a promising candidate for application in optical devices.« less

Enhancing the luminescence efficiency of silicon-nanocrystals by interaction with H+ ions.

PubMed

Cannas, Marco; Camarda, Pietro; Vaccaro, Lavinia; Amato, Francesco; Messina, Fabrizio; Fiore, Tiziana; Li Vigni, Maria

2018-04-18

The emission of silicon nanocrystals (Si-NCs), synthesized by pulsed laser ablation in water, was investigated on varying the pH of the solution. These samples emit μs decaying orange photoluminescence (PL) associated with radiative recombination of quantum-confined excitons. Time-resolved spectra reveal that both the PL intensity and the lifetime increase by a factor of ∼20 when the pH decreases from 10 to 1 thus indicating that the emission quantum efficiency increases by inhibiting nonradiative decay rates. Infrared (IR) absorption and electron paramagnetic resonance (EPR) experiments allow addressing the origin of defects on which the excitons nonradiatively recombine. The linear correlation between the PL and the growth of SiH groups demonstrates that H+ ions passivate the nonradiative defects that are located in the interlayer between the Si-NC core and the amorphous SiO2 shell.

Structural and electrical properties of trimethylboron-doped silicon nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lew, K.-K.; Pan Ling; Bogart, Timothy E.

2004-10-11

Trimethylboron (TMB) was investigated as a p-type dopant source for the vapor-liquid-solid growth of boron-doped silicon nanowires (SiNWs). The boron concentration in the nanowires was measured using secondary ion mass spectrometry and results were compared for boron-doping using TMB and diborane (B{sub 2}H{sub 6}) sources. Boron concentrations ranging from 1x10{sup 18} to 4x10{sup 19} cm{sup -3} were obtained by varying the inlet dopant/SiH{sub 4} gas ratio. TEM characterization revealed that the B{sub 2}H{sub 6}-doped SiNWs consisted of a crystalline core with a thick amorphous Si coating, while the TMB-doped SiNWs were predominantly single crystal even at high boron concentrations. Themore » difference in structural properties was attributed to the higher thermal stability and reduced reactivity of TMB compared to B{sub 2}H{sub 6}. Four-point resistivity and gate-dependent conductance measurements were used to confirm p-type conductivity in the TMB-doped nanowires and to investigate the effect of dopant concentration on nanowire resistivity.« less

Phosphorus Doping in Si Nanocrystals/SiO2 msultilayers and Light Emission with Wavelength compatible for Optical Telecommunication

PubMed Central

Lu, Peng; Mu, Weiwei; Xu, Jun; Zhang, Xiaowei; Zhang, Wenping; Li, Wei; Xu, Ling; Chen, Kunji

2016-01-01

Doping in semiconductors is a fundamental issue for developing high performance devices. However, the doping behavior in Si nanocrystals (Si NCs) has not been fully understood so far. In the present work, P-doped Si NCs/SiO2 multilayers are fabricated. As revealed by XPS and ESR measurements, P dopants will preferentially passivate the surface states of Si NCs. Meanwhile, low temperature ESR spectra indicate that some P dopants are incorporated into Si NCs substitutionally and the incorporated P impurities increase with the P doping concentration or annealing temperature increasing. Furthermore, a kind of defect states will be generated with high doping concentration or annealing temperature due to the damage of Si crystalline lattice. More interestingly, the incorporated P dopants can generate deep levels in the ultra-small sized (~2 nm) Si NCs, which will cause a new subband light emission with the wavelength compatible with the requirement of the optical telecommunication. The studies of P-doped Si NCs/SiO2 multilayers suggest that P doping plays an important role in the electronic structures and optoelectronic characteristics of Si NCs. PMID:26956425

Nonequilibrium-Plasma-Synthesized ZnO Nanocrystals with Plasmon Resonance Tunable via Al Doping and Quantum Confinement.

PubMed

Greenberg, Benjamin L; Ganguly, Shreyashi; Held, Jacob T; Kramer, Nicolaas J; Mkhoyan, K Andre; Aydil, Eray S; Kortshagen, Uwe R

2015-12-09

Metal oxide semiconductor nanocrystals (NCs) exhibit localized surface plasmon resonances (LSPRs) tunable within the infrared (IR) region of the electromagnetic spectrum by vacancy or impurity doping. Although a variety of these NCs have been produced using colloidal synthesis methods, incorporation and activation of dopants in the liquid phase has often been challenging. Herein, using Al-doped ZnO (AZO) NCs as an example, we demonstrate the potential of nonthermal plasma synthesis as an alternative strategy for the production of doped metal oxide NCs. Exploiting unique, thoroughly nonequilibrium synthesis conditions, we obtain NCs in which dopants are not segregated to the NC surfaces and local doping levels are high near the NC centers. Thus, we achieve overall doping levels as high as 2 × 10(20) cm(-3) in NCs with diameters ranging from 12.6 to 3.6 nm, and for the first time experimentally demonstrate a clear quantum confinement blue shift of the LSPR energy in vacancy- and impurity-doped semiconductor NCs. We propose that doping of central cores and heavy doping of small NCs are achievable via nonthermal plasma synthesis, because chemical potential differences between dopant and host atoms-which hinder dopant incorporation in colloidal synthesis-are irrelevant when NC nucleation and growth proceed via irreversible interactions among highly reactive gas-phase ions and radicals and ligand-free NC surfaces. We explore how the distinctive nucleation and growth kinetics occurring in the plasma influences dopant distribution and activation, defect structure, and impurity phase formation.

Silicon and aluminum doping effects on the microstructure and properties of polymeric amorphous carbon films

NASA Astrophysics Data System (ADS)

Liu, Xiaoqiang; Hao, Junying; Xie, Yuntao

2016-08-01

Polymeric amorphous carbon films were prepared by radio frequency (R.F. 13.56 MHz) magnetron sputtering deposition. The microstructure evolution of the deposited polymeric films induced by silicon (Si) and aluminum(Al) doping were scrutinized through infrared spectroscopy, multi-wavelength Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The comparative results show that Si doping can enhance polymerization and Al doping results in an increase in the ordered carbon clusters. Si and Al co-doping into polymeric films leads to the formation of an unusual dual nanostructure consisting of cross-linked polymer-like hydrocarbon chains and fullerene-like carbon clusters. The super-high elasticity and super-low friction coefficients (<0.002) under a high vacuum were obtained through Si and Al co-doping into the films. Unconventionally, the co-doped polymeric films exhibited a superior wear resistance even though they were very soft. The relationship between the microstructure and properties of the polymeric amorphous carbon films with different elements doping are also discussed in detail.

The effects of annealing temperature on the in-field Jc and surface pinning in silicone oil doped MgB2 bulks and wires

NASA Astrophysics Data System (ADS)

Hossain, M. S. A.; Motaman, A.; Çiçek, Ö.; Ağıl, H.; Ertekin, E.; Gencer, A.; Wang, X. L.; Dou, S. X.

2012-12-01

The effects of sintering temperature on the lattice parameters, full width at half maximum (FWHM), strain, critical temperature (Tc), critical current density (Jc), irreversibility field (Hirr), upper critical field (Hc2), and resistivity (ρ) of 10 wt.% silicone oil doped MgB2 bulk and wire samples are investigated in state of the art by this article. The a-lattice parameter of the silicone oil doped samples which were sintered at different temperatures was drastically reduced from 3.0864 Å to 3.0745 Å, compared to the un-doped samples, which indicates the substitution of the carbon (C) into the boron sites. It was found that sintered samples at the low temperature of 600 °C shows more lattice distortion by more C-substitution and higher strain, lower Tc, higher impurity scattering, and enhancement of both magnetic Jc and Hc2, compared to those sintered samples at high temperatures. The flux pinning mechanism has been analyzed based on the extended normalized pinning force density fp = Fp/Fp,max scaled with b = B/Bmax. Results show that surface pinning is the dominant pinning mechanism for the doped sample sintered at the low temperature of 600 °C, while point pinning is dominant for the un-doped sample. The powder in tube (PIT) MgB2 wire was also fabricated by using of this liquid doping and found that both transport Jc and n-factor increased which proves this cheap and abundant silicone oil doping can be a good candidate for industrial application.

Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers

NASA Astrophysics Data System (ADS)

Guan, Bin; Siampour, Hamidreza; Fan, Zhao; Wang, Shun; Kong, Xiang Yang; Mesli, Abdelmadjid; Zhang, Jian; Dan, Yaping

2015-07-01

This Report presents a nitrogen-doping method by chemically forming self-assembled monolayers on silicon. Van der Pauw technique, secondary-ion mass spectroscopy and low temperature Hall effect measurements are employed to characterize the nitrogen dopants. The experimental data show that the diffusion coefficient of nitrogen dopants is 3.66 × 10-15 cm2 s-1, 2 orders magnitude lower than that of phosphorus dopants in silicon. It is found that less than 1% of nitrogen dopants exhibit electrical activity. The analysis of Hall effect data at low temperatures indicates that the donor energy level for nitrogen dopants is located at 189 meV below the conduction band, consistent with the literature value.

"Intact" Carrier Doping by Pump-Pump-Probe Spectroscopy in Combination with Interfacial Charge Transfer: A Case Study of CsPbBr3 Nanocrystals.

PubMed

Wang, Junhui; Ding, Tao; Leng, Jing; Jin, Shengye; Wu, Kaifeng

2018-06-21

Carrier doping is important for semiconductor nanocrystals (NCs) as it offers a new knob to tune NCs' functionalities, in addition to size and shape control. Also, extensive studies on NC devices have revealed that under operating conditions NCs are often unintentionally doped with electrons or holes. Thus, it is essential to be able to control the doping of NCs and study the carrier dynamics of doped NCs. The extension of previously reported redox-doping methods to chemically sensitive materials, such as recently introduced perovskite NCs, has remained challenging. We introduce an "intact" carrier-doping method by performing pump-pump-probe transient absorption spectroscopy on NC-acceptor complexes. The first pump pulse is used to trigger charge transfer from the NC to the acceptor, leading to NCs doped with a band edge carrier; the following pump-probe pulses measure the dynamics of carrier-doped NCs. We performed this measurement on CsPbBr 3 NCs and deduced positive and negative trion lifetimes of 220 ± 50 and 150 ± 40 ps, respectively, for 10 nm diameter NCs, both dominated by Auger recombination. It also allowed us to identify randomly photocharged excitons in CsPbBr 3 NCs as positive trions.

Nitrogen doped silicon-carbon multilayer protective coatings on carbon obtained by thermionic vacuum arc (TVA) method

NASA Astrophysics Data System (ADS)

Ciupinǎ, Victor; Vasile, Eugeniu; Porosnicu, Corneliu; Vladoiu, Rodica; Mandes, Aurelia; Dinca, Virginia; Nicolescu, Virginia; Manu, Radu; Dinca, Paul; Zaharia, Agripina

2018-02-01

To obtain protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, was used TVA method. The initial carbon layer has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV. The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. The retention of oxygen in the protective layer of N-Si-C is due to the following phenomena: (a) The reaction between oxygen and silicon carbide resulting in silicon oxide and carbon dioxide; (b) The reaction involving oxygen, nitrogen and silicon resulting silicon oxinitride with a variable composition; (c) Nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.

Synthesis of highly stable cyanine-dye-doped silica nanoparticle for biological applications

NASA Astrophysics Data System (ADS)

Lian, Ying; Ding, Long-Jiang; Zhang, Wei; Zhang, Xiao-ai; Zhang, Ying-Lu; Lin, Zhen-zhen; Wang, Xu-dong

2018-07-01

Cyanine dyes are widely used in biological labeling and imaging because of their narrow near infrared emission, good brightness and high flexibility in functionalization, which not only enables multiplex analysis and multi-color imaging, but also greatly reduces autofluorescence from biological matter and increases signal-to-noise ratio. Unfortunately, their poor chemical- and photo-stability strongly limits their applications. The incorporation of cyanine dyes in silica nanoparticles provides a solution to the problem. On one hand, the incorporation of cyanine dyes in silica matrix can enhance their chemical- and photo-stability and increase brightness of the nanomaterials. On the other hand, silica matrix provides an optimized condition to host the dye, which helps to maintain their fluorescent properties during application. In addition, the well-established silane technique provides numerous functionalities for diverse applications. However, commercially available cyanine dyes are not very stable at high alkaline conditions, which will gradually lose their fluorescence over time. Our results showed that cyanine dyes are very vulnerable in the reverse micelle system, in which they will lose their fluorescence in less than half an hour. The existence of surfactant could greatly promote degradation of cyanine dyes. Fluorescent silica nanoparticles cannot be obtained at the high alkaline condition with the existence of surfactant. In contrast, the cyanine dyes are relatively stable in Stöber media. Owing to the fast formation of silica particles in Stöber media, the exposure time of cyanine dye in alkaline solution was greatly reduced, and highly fluorescent particles with good morphology and size distribution could be obtained via Stöber approach. However, the increasing water content in the Stöber could reduce the stability of cyanine dyes, which should be avoided. This research here provides a clear guidance on how to successfully synthesize cyanine dye-doped

Preparation and laser properties of Yb3+-doped microstructure fiber based on hydrolysis-melting technique

NASA Astrophysics Data System (ADS)

Wang, Chao

2017-01-01

The Yb3+-doped silica glass was prepared by the SiCl4 hydrolysis doping and powder melting technology based on high frequency plasma. The absorption and emission characteristics of the Yb3+-doped silica glass are studied at room temperature. The integrated absorption cross section, stimulated emission cross section and fluorescence lifetime are calculated to be 8.56×104 pm3, 1.39 pm2 and 0.56 ms, respectively. The Yb3+-doped microstructure fiber (MSF) was also fabricated by using the Yb3+-doped silica glass as fiber core. What's more, the laser properties of the Yb3+-doped MSF are studied.

Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K

NASA Astrophysics Data System (ADS)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2013-07-01

Silicon is investigated as a low-cost, Earth-abundant thermoelectric material for high-temperature applications up to 900 K. For the calculation of module design the Seebeck coefficient and the electrical as well as thermal properties of silicon in the high-temperature range are of great importance. In this study, we evaluate the thermoelectric properties of low-, medium-, and high-doped silicon from room temperature to 900 K. In so doing, the Seebeck coefficient, the electrical and thermal conductivities, as well as the resulting figure of merit ZT of silicon are determined.

Valley-orbit splitting in doped nanocrystalline silicon: k•p calculations

NASA Astrophysics Data System (ADS)

Belyakov, Vladimir A.; Burdov, Vladimir A.

2007-07-01

The valley-orbit splitting in silicon quantum dots with shallow donors has been theoretically studied. In particular, the chemical-shift calculation was carried out within the frames of k•p approximation for single- and many-donor cases. For both cases, the great value of the chemical shift has been obtained compared to its bulk value. Such increase of the chemical shift becomes possible due to the quantum confinement effect in a dot. It is shown for the single-donor case that the level splitting and chemical shift strongly depend on the dot radius and donor position inside the nanocrystal. In the many-donor case, the chemical shift is almost proportional to the number of donors.

A comparative study of three different synthesis routes for hydrophilic fluorophore-doped silica nanoparticles

NASA Astrophysics Data System (ADS)

Shahabi, Shakiba; Treccani, Laura; Rezwan, Kurosch

2016-01-01

The synthesis of fluorophore-doped silica nanoparticles (FDS NPs) with two conventional approaches, Stöber and microemulsion, as well as a novel amino acid-catalyzed seeds regrowth technique (ACSRT) is presented. The efficiency of each applied synthesis route toward incorporation of selected hydrophilic fluorophores, including rhodamine B isothiocyanate and fluorescein isothiocyanate, without and with an amine-containing crosslinker, into silica matrix was systematically studied. Our results clearly highlight the advantages of ACSRT to obtain FDS NPs with a remarkable encapsulation efficiency, high quantum yield, and enhanced stability against bleaching and dye leaking due to efficient embedding of the dyes inside silica network even without the amine-containing silane reagent. Moreover, evaluation of photostability of FDNPs internalized in human bone cells demonstrates the merits of ACSRT.

Controlling upconversion nanocrystals for emerging applications

NASA Astrophysics Data System (ADS)

Zhou, Bo; Shi, Bingyang; Jin, Dayong; Liu, Xiaogang

2015-11-01

Lanthanide-doped upconversion nanocrystals enable anti-Stokes emission with pump intensities several orders of magnitude lower than required by conventional nonlinear optical techniques. Their exceptional properties, namely large anti-Stokes shifts, sharp emission spectra and long excited-state lifetimes, have led to a diversity of applications. Here, we review upconversion nanocrystals from the perspective of fundamental concepts and examine the technical challenges in relation to emission colour tuning and luminescence enhancement. In particular, we highlight the advances in functionalization strategies that enable the broad utility of upconversion nanocrystals for multimodal imaging, cancer therapy, volumetric displays and photonics.

Photosensitized generation of singlet oxygen in porous silicon studied by simultaneous measurements of luminescence of nanocrystals and oxygen molecules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gongalsky, M. B.; Kharin, A. Yu.; Zagorodskikh, S. A.

2011-07-01

Photosensitization of singlet oxygen generation in porous silicon (PSi) was investigated by simultaneous measurements of the photoluminescence (PL) of silicon nanocrystals (nc-Si) and the infrared emission of the {sup 1}{Delta}-state of oxygen molecules at 1270 nm (0.98 eV) at room temperature. Photodegradation of the nc-Si PL properties was found to correlate with the efficiency of singlet oxygen generation. The quantum efficiency of singlet oxygen generation in PSi was estimated to be about 1%, while the lifetime of singlet oxygen was about fifteen ms. The kinetics of nc-Si PL intensity under cw excitation undergoes a power law dependence with the exponentmore » dependent on the photon energy of luminescence. The experimental results are explained with a model of photodegradation controlled by the diffusion of singlet oxygen molecules in a disordered structure of porous silicon.« less

[Effect of nano-silica coating on bonding strength of zirconia ceramics to dentin].

PubMed

Zhang, Xian-Fang; Zheng, Hu; Han, Dong-Wei

2009-04-01

To investigate the effect of silica coating by sol-gel process on bonding strength of zirconia ceramics to dentin. Blocks of sintered zirconia ceramics were cut and randomly divided into 4 groups,16 slices in each group. Each group was subject to one of the 4 kinds of surface treatment (control group, sandblasting, sandblasting +silicone, sandblasting + silica coating + silicone) and then bonded to dentin with resin cement. After preservation in 37 degrees centigrade distilled water for 24 hours, the shear bonding strength of these specimens was tested and the data was analyzed with SAS6.12 software package for analysis of variance. The surface modality of the ceramics was observed under scanning electron microscopy (SEM). The group of sandblasting+ silica coating + silicone attained the highest shear bonding strength, which was significantly different from the other groups(P=0.000);There was no significant difference between the sandblasting and sandblasting + silicone group (P=0.827), which was significantly different from the control group(P=0.001). Silica coating by sol-gel process, coupled with silicone, can significantly increase the bonding strength of zirconia ceramics to dentin.

Strong modification of photoluminescence in erbium-doped porous silicon microcavities

NASA Astrophysics Data System (ADS)

Zhou, Y.; Snow, P. A.; Russell, P. St. J.

2000-10-01

A microcavity composed of porous silicon multilayer mirrors was electrochemically etched and doped with erbium. Measurements of the reflectivity and photoluminescence spectra are presented. Thermal processing under a nitrogen atmosphere optically activated the erbium ions. Photopumping yielded room temperature emission around 1.54 μm from the erbium-doped samples with the emitted light strongly modified by the microcavity structure. Emission spectra with a peak at 1.536 μm had a full width at half maximum of ˜6 nm.

Lanthanide-Doped Ceria Nanoparticles as Backside Coaters to Improve Silicon Solar Cell Efficiency.

PubMed

Hajjiah, Ali; Samir, Effat; Shehata, Nader; Salah, Mohamed

2018-05-23

This paper introduces lanthanide-doped ceria nanoparticles as silicon solar cell back-side coaters, showing their influence on the solar cell efficiency. Ceria nanoparticles can be synthesized to have formed oxygen vacancies (O-vacancies), which are associated with converting cerium ions from the Ce 4+ state ions to the Ce 3+ ones. These O-vacancies follow the rule of improving silicon solar cell conductivity through a hopping mechanism. Besides, under near-ultra violet (near-UV) excitation, the reduced trivalent cerium Ce 3+ ions are directly responsible for down converting the un-absorbed UV wavelengths to a resultant green photo-luminescence emission at ~520 nm, which is absorbed through the silicon solar cell’s active layer. Adding lanthanide elements such as Neodymium “Nd” as ceria nanoparticle dopants helps in forming extra oxygen vacancies (O-vacancies), followed by an increase in the number of Ce 4+ to Ce 3+ ion reductions, thus enhancing the conductivity and photoluminescence down conversion mechanisms. After introducing lanthanide-doped ceria nanoparticles on a silicon solar cell surface, a promising enhancement in the behavior of the solar cell current-voltage curve is observed, and the efficiency is improved by about 25% of its initial value due to the mutual impact of improving both electric conductivity and optical conversions.

In vitro cytotoxicity effect and antibacterial performance of human lung epithelial cells A549 activity of Zinc oxide doped TiO2 nanocrystals: Investigation of bio-medical application by chemical method.

PubMed

Kaviyarasu, K; Geetha, N; Kanimozhi, K; Maria Magdalane, C; Sivaranjani, S; Ayeshamariam, A; Kennedy, J; Maaza, M

2017-05-01

We report the synthesis of high quality ZnO doped TiO 2 nanocrystals by chemical method at room temperature (RT), it can cause serious oxidative stress and DNA damage to human lung epithelial cells (A549) lines. Our aim in this study, to reduce the cytotoxicity effect of ZnO doped TiO 2 nanocrystals are widely in biological fields. Several studies have been performed to understand the influence of ZnO doped titanium dioxide (TiO 2 -NPs) on cell function; however the effects of nanoparticle against to exposure on the cell membrane have been duly addressed fascinatingly so far. However, In this interaction, which may alter cell metabolism and integrity, it is one of the importance to understand the modifications of the cell membrane, mechanisms of pulmonary A549 cell lines nanoparticles were uptake and the molecular pathway during the initial cell responses are still unclear and much more investigative efforts are need to properly characterize the ZnO doped titanium dioxide nanoparticles were reported successfully. In particular of the epithelial cells, upon particles are exposed human pulmonary epithelial cells (A549) to various concentrations of composition, structure and morphology of the nanocrystals were analyzed by X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). XRD assessed the crystal structure of the nanocrystals which identified peaks associated with (002), (100) and (101) planes of hexagonal wurtzite-type ZnO with lattice constants of a=b=3.249Å and c=5.219Å. The IR results showed high purity of products and indicated that the nanocrystals are made up of TiO and ZnO bonds. The Photoluminescence (PL) spectra are dominated by a strong narrow band edge emission tunable in the blue region of the visible spectra indicating a narrow size distribution of ZnO/TiO 2 nanocrystals which exhibits antibacterial activity over a broad range of bacterial species and in particular against Stre. Mut where it out competes four other

Birefringence and anisotropic optical absorption in porous silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Efimova, A. I., E-mail: efimova@vega.phys.msu.ru; Krutkova, E. Yu.; Golovan', L. A.

2007-10-15

The refractive indices and the coefficients of optical absorption by free charge carriers and local vibrations in porous silicon (por-Si) films, comprising nanometer-sized silicon residues (nanocrystals) separated by nanometer-sized pores (nanopores) formed in the course of electrochemical etching of the initial single crystal silicon, have been studied by polarization-resolved IR absorption spectroscopy techniques. It is shown that the birefringence observed in por-Si is related to the anisotropic shapes of nanocrystals and nanopores, while the anisotropy (dichroism) of absorption by the local vibrational modes is determined predominantly by the microrelief of the surface of nanocrystals. It is demonstrated that silicon-hydrogen surfacemore » bonds in nanocrystals can be restored by means of selective hydrogen thermodesorption with the formation of a considerable number of H-terminated surface Si-Si dimers.« less

Ferrocenyl-doped silica nanoparticles as an immobilized affinity support for electrochemical immunoassay of cancer antigen 15-3.

PubMed

Hong, Chenglin; Yuan, Ruo; Chai, Yaqin; Zhuo, Ying

2009-02-09

The aim of this study is to elaborate a simple and sensitive electrochemical immunoassay using ferrocenecarboxylic (Fc-COOH)-doped silica nanoparticles (SNPs) as an immobilized affinity support for cancer antigen 15-3 (CA 15-3) detection. The Fc-COOH-doped SNPs with redox-active were prepared by using a water-in-oil microemulsion method. The use of colloidal silica could prevent the leakage of Fc-COOH and were easily modified with trialkoxysilane reagents for covalent conjugation of CA 15-3 antibodies (anti-CA 15-3). The Fc-COOH-doped SNPs were characterized by X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The fabrication process of the electrochemical immunosensor was demonstrated by using cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) techniques. Under optimal conditions, the developed immunosensor showed good linearity at the studied concentration range of 2.0-240 UmL(-1) with a coefficient 0.9986 and a detection limit of 0.64 UmL(-1) at S/N=3.

Diazonium salts as grafting agents and efficient radical-hydrosilylation initiators for freestanding photoluminescent silicon nanocrystals.

PubMed

Höhlein, Ignaz M D; Kehrle, Julian; Helbich, Tobias; Yang, Zhenyu; Veinot, Jonathan G C; Rieger, Bernhard

2014-04-07

The reactivity of diazonium salts towards freestanding, photoluminescent silicon nanocrystals (SiNCs) is reported. It was found that SiNCs can be functionalized with aryl groups by direct reductive grafting of the diazonium salts. Furthermore, diazonium salts are efficient radical initiators for SiNC hydrosilylation. For this purpose, novel electron-deficient diazonium salts, highly soluble in nonpolar solvents were synthesized. The SiNCs were functionalized with a variety of alkenes and alkynes at room temperature with short reaction times. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Consequences of Atomic Oxygen Interaction With Silicone and Silicone Contamination on Surfaces in Low Earth Orbit

NASA Technical Reports Server (NTRS)

Banks, Bruce A.; deGroh, Kim K.; Rutledge, Sharon K.; Haytas, Christy A.

1999-01-01

The exposure of silicones to atomic oxygen in low Earth orbit causes oxidation of the surface, resulting in conversion of silicone to silica. This chemical conversion increases the elastic modulus of the surface and initiates the development of a tensile strain. Ultimately, with sufficient exposure, tensile strain leads to cracking of the surface enabling the underlying unexposed silicone to be converted to silica resulting in additional depth and extent of cracking. The use of silicone coatings for the protection of materials from atomic oxygen attack is limited because of the eventual exposure of underlying unprotected polymeric material due to deep tensile stress cracking of the oxidized silicone. The use of moderate to high volatility silicones in low Earth orbit has resulted in a silicone contamination arrival at surfaces which are simultaneously being bombarded with atomic oxygen, thus leading to conversion of the silicone contaminant to silica. As a result of these processes, a gradual accumulation of contamination occurs leading to deposits which at times have been up to several microns thick (as in the case of a Mir solar array after 10 years in space). The contamination species typically consist of silicon, oxygen and carbon. which in the synergistic environment of atomic oxygen and UV radiation leads to increased solar absorptance and reduced solar transmittance. A comparison of the results of atomic oxygen interaction with silicones and silicone contamination will be presented based on the LDEF, EOIM-111, Offeq-3 spacecraft and Mir solar array in-space results. The design of a contamination pin-hole camera space experiment which uses atomic oxygen to produce an image of the sources of silicone contamination will also be presented.

Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C

DOE Office of Scientific and Technical Information (OSTI.GOV)

Matsumura, Hideki; Hayakawa, Taro; Ohta, Tatsunori

Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH₃) or diborane (B₂H₆) with heated tungsten (W) catalyzer. This paper is to investigate systematically this novel doping method, “Cat-doping”, in detail. The electrical properties of P or B doped layers are studied by the Van der Pauw method based on the Hall effects measurement. The profiles of P or B atoms in c-Si are observed by secondary ion mass spectrometry mainlymore » from back side of samples to eliminate knock-on effects. It is confirmed that the surface of p-type c-Si is converted to n-type by P Cat-doping at 80 °C, and similarly, that of n-type c-Si is to p-type by B Cat-doping. The doping depth is as shallow as 5 nm or less and the electrically activated doping concentration is 10¹⁸ to 10¹⁹cm⁻³ for both P and B doping. It is also found that the surface potential of c-Si is controlled by the shallow Cat-doping and that the surface recombination velocity of minority carriers in c-Si can be enormously lowered by this potential control.« less

Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com; Troudi, M.; Sghaier, N.

2016-09-15

In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) wemore » show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.« less

Mesoporous materials and nanocrystals for enhancing the dissolution behavior of poorly water-soluble drugs.

PubMed

Santos, Helder A; Peltonen, Leena; Limnell, Tarja; Hirvonen, Jouni

2013-01-01

Advanced drug delivery formulations are presently recognized as promising tools for overcoming the adverse physicochemical properties of conventional drug molecules, such as poor water solubility, which often leads to poor drug bioavailability. Oral drug delivery is considered as the easiest and most convenient route of drug administration. However, via the current trends utilizing combinatorial chemistry and high throughput screening in drug development, new drug molecules are moving towards lipophilic and poorly water-soluble large molecules, and the oral delivery route is becoming increasingly challenging. In this context, formulation of poorly soluble and/or permeable drugs using mesoporous materials and nanocrystals technology have proven to be highly successful due to the greater surface/volume ratio of these systems, resulting in improvements in dissolution and bioavailability, as well as enhanced drug permeability. This review addresses the issues of poorly water-soluble drugs with a major focus on recent developments in the application of the mesoporous materials (e.g., porous silicon and silica) and nanocrystals in drug delivery applications. In addition, we present several recent examples of the significant potential of these materials for the pharmaceutical field.

Polyelectrolyte-assisted preparation of gold nanocluster-doped silica particles with high incorporation efficiency and improved stability

NASA Astrophysics Data System (ADS)

Wang, Haonan; Huang, Zhenzhen; Guo, Zilong; Yang, Wensheng

2017-07-01

In this paper, we reported an approach for efficient incorporation of glutathione-capped gold nanoclusters (GSH-Au NCs) into silica particles with the assistance of a polyelectrolyte, poly-diallyldimethyl-ammoniumchloride (PDDA). In this approach, the negatively charged GSH-Au NCs were firstly mixed with the positively charged PDDA to form PDDA-Au NC complexes. Then, the complexes were added into a pre-hydrolyzed Stöber system to get the Au NCs-doped silica particles. With increased ratio of PDDA in the complexes, the negative charges on surface of the Au NCs were neutralized gradually and finally reversed to positive in presence of excess PDDA, which facilitated the incorporation of the Au NCs into the negatively charged silica matrix. Under the optimal amount of PDDA in the complexes, the incorporation efficiency of Au NCs could be as high as 88%. After being incorporated into the silica matrix, the Au NCs become much robust against pH and heavy metal ions attributed to the protection effect of silica and PDDA. This approach was also extendable to highly efficient incorporation of other negatively charged metal nanoclusters, such as bovine serum albumin-capped Cu nanoclusters, into silica matrix.

Defect Chemistry and Plasmon Physics of Colloidal Metal Oxide Nanocrystals.

PubMed

Lounis, Sebastien D; Runnerstrom, Evan L; Llordés, Anna; Milliron, Delia J

2014-05-01

Plasmonic nanocrystals of highly doped metal oxides have seen rapid development in the past decade and represent a class of materials with unique optoelectronic properties. In this Perspective, we discuss doping mechanisms in metal oxides and the accompanying physics of free carrier scattering, both of which have implications in determining the properties of localized surface plasmon resonances (LSPRs) in these nanocrystals. The balance between activation and compensation of dopants limits the free carrier concentration of the most common metal oxides, placing a ceiling on the LSPR frequency. Furthermore, because of ionized impurity scattering of the oscillating plasma by dopant ions, scattering must be treated in a fundamentally different way in semiconductor metal oxide materials when compared with conventional metals. Though these effects are well-understood in bulk metal oxides, further study is needed to understand their manifestation in nanocrystals and corresponding impact on plasmonic properties, and to develop materials that surpass current limitations in free carrier concentration.

Mechanisms for dose retention in conformal arsenic doping using a radial line slot antenna microwave plasma source

NASA Astrophysics Data System (ADS)

Ueda, Hirokazu; Ventzek, Peter L. G.; Oka, Masahiro; Kobayashi, Yuuki; Sugimoto, Yasuhiro

2015-06-01

Topographic structures such as Fin FETs and silicon nanowires for advanced gate fabrication require ultra-shallow high dose infusion of dopants into the silicon subsurface. Plasma doping meets this requirement by supplying a flux of inert ions and dopant radicals to the surface. However, the helium ion bombardment needed to infuse dopants into the fin surface can cause poor dose retention. This is due to the interaction between substrate damage and post doping process wet cleaning solutions required in the front end of line large-scale integration fabrication. We present findings from surface microscopy experiments that reveal the mechanism for dose retention in arsenic doped silicon fin samples using a microwave RLSA™ plasma source. Dilute aqueous hydrofluoric acid (DHF) cleans by themselves are incompatible with plasma doping processes because the films deposited over the dosed silicon and ion bombardment damaged silicon are readily removed. Oxidizing wet cleaning chemistries help retain the dose as silica rich over-layers are not significantly degraded. Furthermore, the dosed retention after a DHF clean following an oxidizing wet clean is unchanged. Still, the initial ion bombardment energy and flux are important. Large ion fluxes at energies below the sputter threshold and above the silicon damage threshold, before the silicon surface is covered by an amorphous mixed phase layer, allow for enhanced uptake of dopant into the silicon. The resulting dopant concentration is beyond the saturation limit of crystalline silicon.

Rare Earth Ion-Doped Upconversion Nanocrystals: Synthesis and Surface Modification

PubMed Central

Chang, Hongjin; Xie, Juan; Zhao, Baozhou; Liu, Botong; Xu, Shuilin; Ren, Na; Xie, Xiaoji; Huang, Ling; Huang, Wei

2014-01-01

The unique luminescent properties exhibited by rare earth ion-doped upconversion nanocrystals (UCNPs), such as long lifetime, narrow emission line, high color purity, and high resistance to photobleaching, have made them widely used in many areas, including but not limited to high-resolution displays, new-generation information technology, optical communication, bioimaging, and therapy. However, the inherent upconversion luminescent properties of UCNPs are influenced by various parameters, including the size, shape, crystal structure, and chemical composition of the UCNPs, and even the chosen synthesis process and the surfactant molecules used. This review will provide a complete summary on the synthesis methods and the surface modification strategies of UCNPs reported so far. Firstly, we summarize the synthesis methodologies developed in the past decades, such as thermal decomposition, thermal coprecipitation, hydro/solvothermal, sol-gel, combustion, and microwave synthesis. In the second part, five main streams of surface modification strategies for converting hydrophobic UCNPs into hydrophilic ones are elaborated. Finally, we consider the likely directions of the future development and challenges of the synthesis and surface modification, such as the large-scale production and actual applications, stability, and so on, of the UCNPs. PMID:28346995

Controlled spontaneous emission in erbium-doped microphotonic materials

NASA Astrophysics Data System (ADS)

Kalkman, Jeroen

2005-03-01

Erbium is a rare-earth metal that, when incorporated in a solid, can emit light at a wavelength of 1.5 μm. It plays a key role in current day telecommunication technology as the principle ingredient of optical fiber amplifiers. In this thesis the control of the Er spontaneous emission in three different types of microphotonic materials is described. Part I of this thesis focuses on the effect of a metallo-dielectric interface on the spontaneous emission of optical emitters in silica glass. It is shown that Er ions near a Ag interface can couple to surface plasmons (SPs) via a near-field interaction. By coupling SPs out into the far field, large changes in the Er photoluminescence emission distribution, spectra, and polarization can be observed. The excitation of SPs also results in an increase of the Er photoluminescence decay rate. The observed decay rates are in good agreement with calculations based on a classical dipole oscillator model. From the change in photoluminescence decay rate of Si nanocrystals near a Ag interface it is shown that Si nanocrystals can efficiently excite SPs and have an internal quantum efficiency of 77 %. Part II focuses on the effect of a microcavity on the spontaneous emission of Er and describes how ion implantation can be used to dope dielectric microresonators with optically active Er ions. The fabrication and characterization of an Er ion-implanted silica microsphere resonator is described that shows lasing at 1.5 μm when pumped above its lasing threshold. Ion implantation is also used to dope toroidal microcavities on a Si chip with Er. The microtoroids are doped by either pre-implantation into the SiO2 base material, or by post-implantation in a fully fabricated microtoroid. The optical activation of Er ions in the microtoroid is investigated and Er lasing at 1.5 μm is observed for both types of microcavities with the lowest threshold (4.5 μW) for the pre-implanted microtoroids. Part III describes the fabrication of an Er-doped

Specific features of doping with antimony during the ion-beam crystallization of silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pashchenko, A. S., E-mail: as.pashchenko@gmail.com; Chebotarev, S. N.; Lunin, L. S.

2016-04-15

A method of doping during the growth of thin films by ion-beam crystallization is proposed. By the example of Si and Sb, the possibility of controllably doping semiconductors during the ion-beam crystallization process is shown. A calibrated temperature dependence of the antimony vapor flow rate in the range from 150 to 400°C is obtained. It is established that, an increase in the evaporator temperature above 200°C brings about the accumulation of impurities in the layer growth direction. Silicon layers doped with antimony to a concentration of 10{sup 18} cm{sup –3} are grown. It is shown that, as the evaporator temperaturemore » is increased, the efficiency of the activation of antimony in silicon nonlinearly decreases from ~10{sup 0} to ~10{sup –3}.« less

Controlled growth of periodically aligned copper-silicide nanocrystal arrays on silicon directed by laser-induced periodic surface structures (LIPSS)

NASA Astrophysics Data System (ADS)

Nürnberger, Philipp; Reinhardt, Hendrik M.; Rhinow, Daniel; Riedel, René; Werner, Simon; Hampp, Norbert A.

2017-10-01

In this paper we introduce a versatile tool for the controlled growth and alignment of copper-silicide nanocrystals. The method takes advantage of a unique self-organization phenomenon denoted as laser-induced periodic surface structures (LIPSS). Copper films (3 ± 0.2 nm) are sputter-deposited onto single crystal silicon (100) substrates with a thin oxide layer (4 ± 0.2 nm), and subsequently exposed to linearly polarized nanosecond laser pulses (τ ≈ 6 ns) at a central wavelength of 532 nm. The irradiation triggers dewetting of the Cu film and simultaneous formation of periodic Cu nanowires (LIPSS), which partially penetrate the oxide layer to the Si substrate. These LIPSS act as nucleation centers for the growth of Cu-Si crystals during thermal processing at 500 °C under forming gas 95/5 atmosphere. Exemplified by our model system Cu/SiO2/Si, LIPSS are demonstrated to facilitate the diffusion reaction between Cu and underlying Si. Moreover, adjustment of the laser polarization allows us to precisely control the nanocrystal alignment with respect to the LIPSS orientation. Potential applications and conceivable alternatives of this process are discussed.

Optical properties of Si and Ge nanocrystals: Parameter-free calculations

NASA Astrophysics Data System (ADS)

Ramos, L. E.; Weissker, H.-Ch.; Furthmüller, J.; Bechstedt, F.

2005-12-01

The cover picture of the current issue refers to the Edi-tor's Choice article of Ramos et al. [1]. The paper gives an overview of the electronic and optical properties of silicon and germanium nanocrystals determined by state-of-the-art ab initio methods. Nanocrystals have promising applications in opto-electronic devices, since they can be used to confine electrons and holes and facilitate radiative recombination. Since meas-urements for single nanoparticles are difficult to make, ab initio theoretical investigations become important to understand the mechanisms of luminescence.The cover picture shows nanocrystals of four sizes with tetrahedral coordination whose dangling bonds at the surface are passivated with hydrogen. As often observed in experiments, the nanocrystals are not perfectly spherical, but contain facets. Apart from the size of the nanocrystals, which determines the quantum confinement, the way their dangling bonds are passivated is relevant for their electronic and optical properties. For instance, the passivation with hydroxyls reduces the quantum confine-ment. On the other hand, the oxidation of the silicon nanocrys-tals increases the quantum confinement and reduces the effect of single surface terminations on the gap. Due to the oscillator strengths of the lowest-energy optical transitions, Ge nanocrys-tals are in principle more suitable for opto-electronic applica-tions than Si nanocrystals.The first author, Luis E. Ramos, is a postdoc at the Institute of Solid-State Physics and Optics (IFTO), Friedrich-Schiller University Jena, Germany. He investigates electronic and optical properties of semiconductor nanocrystallites and is a member of the European Network of Excellence NANO-QUANTA and of the European Theoretical Spectroscopy Facility (ETSF).

Photovoltaic Performance Enhancement of Silicon Solar Cells Based on Combined Ratios of Three Species of Europium-Doped Phosphors.

PubMed

Ho, Wen-Jeng; You, Bang-Jin; Liu, Jheng-Jie; Bai, Wen-Bin; Syu, Hong-Jhang; Lin, Ching-Fuh

2018-05-18

This paper presents a scheme for the enhancement of silicon solar cells in terms of luminescent emission band and photovoltaic performance. The proposed devices are coated with an luminescent down-shifting (LDS) layer comprising three species of europium (Eu)-doped phosphors mixed within a silicate film (SiO₂) using a spin-on film deposition. The three species of phosphor were mixed at ratios of 0.5:1:1.5, 1:1:1, or 1.5:1:0.5 in weight percentage (wt %). The total quantity of Eu-doped phosphors in the silicate solution was fixed at 3 wt %. The emission wavelengths of the Eu-doped phosphors were as follows: 518 nm (specie-A), 551 nm (specie-B), and 609 nm (specie-C). We examined the extended luminescent emission bands via photoluminescence measurements at room temperature. Closely matching the luminescent emission band to the high responsivity band of the silicon semiconductor resulted in good photovoltaic performance. Impressive improvements in efficiency were observed in all three samples: 0.5:1:1.5 (20.43%), 1:1:1 (19.67%), 1.5:1:0.5 (16.81%), compared to the control with a layer of pure SiO₂ (13.80%).

Selective doping of silicon nanowires by means of electron beam stimulated oxide etching.

PubMed

Pennelli, G; Totaro, M; Piotto, M

2012-02-08

Direct patterning of silicon dioxide by means of electron beam stimulated etching is shown, and a full characterization of exposure dose is presented. For its high dose, this technique is unsuitable for large areas but can be usefully employed like a precision scalpel for removing silicon dioxide by well-localized points. In this work, this technique is applied to the definition of windows through the oxide surrounding top down fabricated n-doped silicon nanowires. These windows will be employed for a selective doping of the nanowire by boron diffusion. In this way, pn junctions can be fabricated in well-localized points in the longitudinal direction of the nanowire, and an electrical contact to the different junctions can be provided. Electrical I-V characteristics of a nanowire with pn longitudinal junctions are reported and discussed. © 2012 American Chemical Society

Mn-doped Zinc Sulphide nanocrystals for immunofluorescent labeling of epidermal growth factor receptors on cells and clinical tumor tissues

NASA Astrophysics Data System (ADS)

J, Aswathy; V, Seethalekshmy N.; R, Hiran K.; R, Bindhu M.; K, Manzoor; Nair, Shantikumar V.; Menon, Deepthy

2014-11-01

The field of molecular detection and targeted imaging has evolved considerably with the introduction of fluorescent semiconductor nanocrystals. Manganese-doped zinc sulphide nanocrystals (ZnS:Mn NCs), which are widely used in electroluminescent displays, have been explored for the first time for direct immunofluorescent (IF) labeling of clinical tumor tissues. ZnS:Mn NCs developed through a facile wet chemistry route were capped using amino acid cysteine, conjugated to streptavidin and thereafter coupled to biotinylated epidermal growth factor receptor (EGFR) antibody utilizing the streptavidin-biotin linkage. The overall conjugation yielded stable EGFR antibody conjugated ZnS:Mn NCs (EGFR ZnS:Mn NCs) with a hydrodynamic diameter of 65 ± 15 nm, and having an intense orange-red fluorescence emission at 598 nm. Specific labeling of EGF receptors on EGFR+ve A431 cells in a co-culture with EGFR-ve NIH3T3 cells was demonstrated using these nanoprobes. The primary antibody conjugated fluorescent NCs could also clearly delineate EGFR over-expressing cells on clinical tumor tissues processed by formalin fixation as well as cryopreservation with a specificity of 86% and accuracy of 88%, in comparison to immunohistochemistry. Tumor tissues labeled with EGFR ZnS:Mn NCs showed good fluorescence emission when imaged after storage even at 15 months. Thus, ZnS nanobioconjugates with dopant-dependent and stable fluorescence emission show promise as an efficient, target-specific fluorophore that would enable long term IF labeling of any antigen of interest on clinical tissues.

Delta-Doping at Wafer Level for High Throughput, High Yield Fabrication of Silicon Imaging Arrays

NASA Technical Reports Server (NTRS)

Hoenk, Michael E. (Inventor); Nikzad, Shoulch (Inventor); Jones, Todd J. (Inventor); Greer, Frank (Inventor); Carver, Alexander G. (Inventor)

2014-01-01

Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.

Fine Splitting of Electron States in Silicon Nanocrystal with a Hydrogen-like Shallow Donor