Sample records for nanoscale double gate

  1. Performance characteristics of a nanoscale double-gate reconfigurable array

    NASA Astrophysics Data System (ADS)

    Beckett, Paul

    2008-12-01

    The double gate transistor is a promising device applicable to deep sub-micron design due to its inherent resistance to short-channel effects and superior subthreshold performance. Using both TCAD and SPICE circuit simulation, it is shown that the characteristics of fully depleted dual-gate thin-body Schottky barrier silicon transistors will not only uncouple the conflicting requirements of high performance and low standby power in digital logic, but will also allow the development of a locally-connected reconfigurable computing mesh. The magnitude of the threshold shift effect will scale with device dimensions and will remain compatible with oxide reliability constraints. A field-programmable architecture based on the double gate transistor is described in which the operating point of the circuit is biased via one gate while the other gate is used to form the logic array, such that complex heterogeneous computing functions may be developed from this homogeneous, mesh-connected organization.

  2. Design and simulation of nanoscale double-gate TFET/tunnel CNTFET

    NASA Astrophysics Data System (ADS)

    Bala, Shashi; Khosla, Mamta

    2018-04-01

    A double-gate tunnel field-effect transistor (DG tunnel FET) has been designed and investigated for various channel materials such as silicon (Si), gallium arsenide (GaAs), alminium gallium arsenide (Al x Ga1‑x As) and CNT using a nano ViDES Device and TCAD SILVACO ATLAS simulator. The proposed devices are compared on the basis of inverse subthreshold slope (SS), I ON/I OFF current ratio and leakage current. Using Si as the channel material limits the property to reduce leakage current with scaling of channel, whereas the Al x Ga1‑x As based DG tunnel FET provides a better I ON/I OFF current ratio (2.51 × 106) as compared to other devices keeping the leakage current within permissible limits. The performed silmulation of the CNT based channel in the double-gate tunnel field-effect transistor using the nano ViDES shows better performace for a sub-threshold slope of 29.4 mV/dec as the channel is scaled down. The proposed work shows the potential of the CNT channel based DG tunnel FET as a futuristic device for better switching and high retention time, which makes it suitable for memory based circuits.

  3. Local Gate Control of a Carbon Nanotube Double Quantum Dot

    DTIC Science & Technology

    2016-04-04

    Nanotube Double Quantum Dot N. Mason,*† M. J. Biercuk,* C. M. Marcus† We have measured carbon nanotube quantum dots with multiple electro- static gates and...computation. Carbon nanotubes have been considered lead- ing candidates for nanoscale electronic applica- tions (1, 2). Previous measurements of nano- tube...electronics have shown electron confine- ment (quantum dot) effects such as single- electron charging and energy-level quantization (3–5). Nanotube

  4. 100-nm gate lithography for double-gate transistors

    NASA Astrophysics Data System (ADS)

    Krasnoperova, Azalia A.; Zhang, Ying; Babich, Inna V.; Treichler, John; Yoon, Jung H.; Guarini, Kathryn; Solomon, Paul M.

    2001-09-01

    The double gate field effect transistor (FET) is an exploratory device that promises certain performance advantages compared to traditional CMOS FETs. It can be scaled down further than the traditional devices because of the greater electrostatic control by the gates on the channel (about twice as short a channel length for the same gate oxide thickness), has steeper sub-threshold slope and about double the current for the same width. This paper presents lithographic results for double gate FET's developed at IBM's T. J. Watson Research Center. The device is built on bonded wafers with top and bottom gates self-aligned to each other. The channel is sandwiched between the top and bottom polysilicon gates and the gate length is defined using DUV lithography. An alternating phase shift mask was used to pattern gates with critical dimensions of 75 nm, 100 nm and 125 nm in photoresist. 50 nm gates in photoresist have also been patterned by 20% over-exposure of nominal 100 nm lines. No trim mask was needed because of a specific way the device was laid out. UV110 photoresist from Shipley on AR-3 antireflective layer were used. Process windows, developed and etched patterns are presented.

  5. Double optical gating

    NASA Astrophysics Data System (ADS)

    Gilbertson, Steve

    The observation and control of dynamics in atomic and molecular targets requires the use of laser pulses with duration less than the characteristic timescale of the process which is to be manipulated. For electron dynamics, this time scale is on the order of attoseconds where 1 attosecond = 10 -18 seconds. In order to generate pulses on this time scale, different gating methods have been proposed. The idea is to extract or "gate" a single pulse from an attosecond pulse train and switch off all the other pulses. While previous methods have had some success, they are very difficult to implement and so far very few labs have access to these unique light sources. The purpose of this work is to introduce a new method, called double optical gating (DOG), and to demonstrate its effectiveness at generating high contrast single isolated attosecond pulses from multi-cycle lasers. First, the method is described in detail and is investigated in the spectral domain. The resulting attosecond pulses produced are then temporally characterized through attosecond streaking. A second method of gating, called generalized double optical gating (GDOG), is also introduced. This method allows attosecond pulse generation directly from a carrier-envelope phase un-stabilized laser system for the first time. Next the methods of DOG and GDOG are implemented in attosecond applications like high flux pulses and extreme broadband spectrum generation. Finally, the attosecond pulses themselves are used in experiments. First, an attosecond/femtosecond cross correlation is used for characterization of spatial and temporal properties of femtosecond pulses. Then, an attosecond pump, femtosecond probe experiment is conducted to observe and control electron dynamics in helium for the first time.

  6. Bias stress instability of double-gate a-IGZO TFTs on polyimide substrate

    NASA Astrophysics Data System (ADS)

    Cho, Won-Ju; Ahn, Min-Ju

    2017-09-01

    In this study, flexible double-gate thin-film transistor (TFT)-based amorphous indium-galliumzinc- oxide (a-IGZO) was fabricated on a polyimide substrate. Double-gate operation with connected front and back gates was compared with a single-gate operation. As a result, the double-gate a- IGZO TFT exhibited enhanced electrical characteristics as well as improved long-term reliability. Under positive- and negative-bias temperature stress, the threshold voltage shift of the double-gate operation was much smaller than that of the single-gate operation.

  7. Enhanced transconductance in a double-gate graphene field-effect transistor

    NASA Astrophysics Data System (ADS)

    Hwang, Byeong-Woon; Yeom, Hye-In; Kim, Daewon; Kim, Choong-Ki; Lee, Dongil; Choi, Yang-Kyu

    2018-03-01

    Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 μS/μm, that of the DG GFET was 25.7 μS/μm, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology.

  8. Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around

    NASA Astrophysics Data System (ADS)

    Guerfi, Youssouf; Larrieu, Guilhem

    2016-04-01

    Nanowires are considered building blocks for the ultimate scaling of MOS transistors, capable of pushing devices until the most extreme boundaries of miniaturization thanks to their physical and geometrical properties. In particular, nanowires' suitability for forming a gate-all-around (GAA) configuration confers to the device an optimum electrostatic control of the gate over the conduction channel and then a better immunity against the short channel effects (SCE). In this letter, a large-scale process of GAA vertical silicon nanowire (VNW) MOSFETs is presented. A top-down approach is adopted for the realization of VNWs with an optimum reproducibility followed by thin layer engineering at nanoscale. Good overall electrical performances were obtained, with excellent electrostatic behavior (a subthreshold slope (SS) of 95 mV/dec and a drain induced barrier lowering (DIBL) of 25 mV/V) for a 15-nm gate length. Finally, a first demonstration of dual integration of n-type and p-type VNW transistors for the realization of CMOS inverter is proposed.

  9. Performance analysis of SiGe double-gate N-MOSFET

    NASA Astrophysics Data System (ADS)

    Singh, A.; Kapoor, D.; Sharma, R.

    2017-04-01

    The major purpose of this paper is to find an alternative configuration that not only minimizes the limitations of single-gate (SG) MOSFETs but also provides the better replacement for future technology. In this paper, the electrical characteristics of SiGe double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si double-gate N-MOSFET. Furthermore, in this paper the electrical characteristics of Si double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si single-gate N-MOSFET. The simulations are carried out for the device at different operational voltages using Cogenda Visual TCAD tool. Moreover, we have designed its structure and studied both {I}{{d}}{-}{V}{{g}} characteristics for different voltages namely 0.05, 0.1, 0.5, 0.8, 1 and 1.5 V and {I}{{d}}{-}{V}{{d}} characteristics for different voltages namely 0.1, 0.5, 1 and 1.5 V at work functions 4.5, 4.6 and 4.8 eV for this structure. The performance parameters investigated in this paper are threshold voltage, DIBL, subthreshold slope, GIDL, volume inversion and MMCR.

  10. Effect of gate bias sweep rate on the threshold voltage of in-plane gate nanowire transistor

    NASA Astrophysics Data System (ADS)

    Liu, H. X.; Li, J.; Tan, R. R.

    2018-01-01

    In2O3 nanowire electric-double-layer (EDL) transistors with in-plane gate gated by SiO2 solid-electrolyte are fabricated on transparent glass substrates. The gate voltage sweep rates can effectively modulate the threshold voltage (Vth) of nanowire device. Both depletion mode and enhancement mode are realized, and the Vth shift of the nanowire transistors is estimated to be 0.73V (without light). This phenomenon is due to increased adsorption of oxygen on the nanowire surface by the slower gate voltage sweep rates. Adsorbed oxygens capture electrons and cause a surface of nanowire channel was depleted. The operation voltage of transistor was 1.0 V, because the EDL gate dielectric can lead to high gate dielectric capacitance. These transparent in-plane gate nanowire transistors are promising for “see-through” nanoscale sensors.

  11. Nanoscale Ge fin etching using F- and Cl-based etchants for Ge-based multi-gate devices

    NASA Astrophysics Data System (ADS)

    Zhang, Bingxin; An, Xia; Li, Ming; Hao, Peilin; Zhang, Xing; Huang, Ru

    2018-04-01

    In this paper, nanoscale germanium (Ge) fin etching with inductively coupled plasma equipment with SF6/CHF3/Ar and Cl2/BCl3/Ar gas mixes are experimentally demonstrated. The impact of the gas ratio on etching induced Ge surface flatness, etch rate and sidewall steepness are comprehensively investigated and compared for these two kinds of etchants and the optimized gas ratio is provided. By using silicon oxide as a hard mask, nanoscale Ge fin with a flat surface and sharp sidewall is experimentally illustrated, which indicates great potential for use in nanoscale Ge-based multi-gate MOSFETs.

  12. Proposal for nanoscale cascaded plasmonic majority gates for non-Boolean computation.

    PubMed

    Dutta, Sourav; Zografos, Odysseas; Gurunarayanan, Surya; Radu, Iuliana; Soree, Bart; Catthoor, Francky; Naeemi, Azad

    2017-12-19

    Surface-plasmon-polariton waves propagating at the interface between a metal and a dielectric, hold the key to future high-bandwidth, dense on-chip integrated logic circuits overcoming the diffraction limitation of photonics. While recent advances in plasmonic logic have witnessed the demonstration of basic and universal logic gates, these CMOS oriented digital logic gates cannot fully utilize the expressive power of this novel technology. Here, we aim at unraveling the true potential of plasmonics by exploiting an enhanced native functionality - the majority voter. Contrary to the state-of-the-art plasmonic logic devices, we use the phase of the wave instead of the intensity as the state or computational variable. We propose and demonstrate, via numerical simulations, a comprehensive scheme for building a nanoscale cascadable plasmonic majority logic gate along with a novel referencing scheme that can directly translate the information encoded in the amplitude and phase of the wave into electric field intensity at the output. Our MIM-based 3-input majority gate displays a highly improved overall area of only 0.636 μm 2 for a single-stage compared with previous works on plasmonic logic. The proposed device demonstrates non-Boolean computational capability and can find direct utility in highly parallel real-time signal processing applications like pattern recognition.

  13. Micromachined mold-type double-gated metal field emitters

    NASA Astrophysics Data System (ADS)

    Lee, Yongjae; Kang, Seokho; Chun, Kukjin

    1997-12-01

    Electron field emitters with double gates were fabricated using micromachining technology and the effect of the electric potential of the focusing gate (or second gate) was experimentally evaluated. The molybdenum field emission tip was made by filling a cusplike mold formed when a conformal film was deposited on the hole-trench that had been patterned on stacked metals and dielectric layers. The hole-trench was patterned by electron beam lithography and reactive ion etching. Each field emitter has a 0960-1317/7/4/009/img1 diameter extraction gate (or first gate) and a 0960-1317/7/4/009/img2 diameter focusing gate (or second gate). To make a path for the emitted electrons, silicon bulk was etched anisotropically in KOH and EDP (ethylene-diamine pyrocatechol) solution successively. The I - V characteristics and anode current change due to the focusing gate potential were measured.

  14. Gate tunable parallel double quantum dots in InAs double-nanowire devices

    NASA Astrophysics Data System (ADS)

    Baba, S.; Matsuo, S.; Kamata, H.; Deacon, R. S.; Oiwa, A.; Li, K.; Jeppesen, S.; Samuelson, L.; Xu, H. Q.; Tarucha, S.

    2017-12-01

    We report fabrication and characterization of InAs nanowire devices with two closely placed parallel nanowires. The fabrication process we develop includes selective deposition of the nanowires with micron scale alignment onto predefined finger bottom gates using a polymer transfer technique. By tuning the double nanowire with the finger bottom gates, we observed the formation of parallel double quantum dots with one quantum dot in each nanowire bound by the normal metal contact edges. We report the gate tunability of the charge states in individual dots as well as the inter-dot electrostatic coupling. In addition, we fabricate a device with separate normal metal contacts and a common superconducting contact to the two parallel wires and confirm the dot formation in each wire from comparison of the transport properties and a superconducting proximity gap feature for the respective wires. With the fabrication techniques established in this study, devices can be realized for more advanced experiments on Cooper-pair splitting, generation of Parafermions, and so on.

  15. Double-gated myocardial ASL perfusion imaging is robust to heart rate variation.

    PubMed

    Do, Hung Phi; Yoon, Andrew J; Fong, Michael W; Saremi, Farhood; Barr, Mark L; Nayak, Krishna S

    2017-05-01

    Cardiac motion is a dominant source of physiological noise (PN) in myocardial arterial spin labeled (ASL) perfusion imaging. This study investigates the sensitivity to heart rate variation (HRV) of double-gated myocardial ASL compared with the more widely used single-gated method. Double-gating and single-gating were performed on 10 healthy volunteers (n = 10, 3F/7M; age, 23-34 years) and eight heart transplant recipients (n = 8, 1F/7M; age, 26-76 years) at rest in the randomized order. Myocardial blood flow (MBF), PN, temporal signal-to-noise ratio (SNR), and HRV were measured. HRV ranged from 0.2 to 7.8 bpm. Double-gating PN did not depend on HRV, while single-gating PN increased with HRV. Over all subjects, double-gating provided a significant reduction in global PN (from 0.20 ± 0.15 to 0.11 ± 0.03 mL/g/min; P = 0.01) and per-segment PN (from 0.33 ± 0.23 to 0.21 ± 0.12 mL/g/min; P < 0.001), with significant increases in global temporal SNR (from 11 ± 8 to 18 ± 8; P = 0.02) and per-segment temporal SNR (from 7 ± 4 to 11 ± 12; P < 0.001) without significant difference in measured MBF. Single-gated myocardial ASL suffers from reduced temporal SNR, while double-gated myocardial ASL provides consistent temporal SNR independent of HRV. Magn Reson Med 77:1975-1980, 2017. © 2016 International Society for Magnetic Resonance in Medicine. © 2016 International Society for Magnetic Resonance in Medicine.

  16. High-performance SEGISFET pH Sensor using the structure of double-gate a-IGZO TFTs with engineered gate oxides

    NASA Astrophysics Data System (ADS)

    Pyo, Ju-Young; Cho, Won-Ju

    2017-03-01

    In this paper, we propose a high-performance separative extended gate ion-sensitive field-effect transistor (SEGISFET) that consists of a tin dioxide (SnO2) SEG sensing part and a double-gate structure amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) with tantalum pentoxide/silicon dioxide (Ta2O5/SiO2)-engineered top-gate oxide. To increase sensitivity, we maximized the capacitive coupling ratio by applying high-k dielectric at the top-gate oxide layer. As an engineered top-gate oxide, a stack of 25 nm-thick Ta2O5 and 10 nm-thick SiO2 layers was found to simultaneously satisfy a small equivalent oxide thickness (˜17.14 nm), a low leakage current, and a stable interfacial property. The threshold-voltage instability, which is a fundamental issue in a-IGZO TFTs, was improved by low-temperature post-deposition annealing (˜87 °C) using microwave irradiation. The double-gate structure a-IGZO TFTs with engineered top-gate oxide exhibited high mobility, small subthreshold swing, high drive current, and larger on/off current ratio. The a-IGZO SEGISFETs with a dual-gate sensing mode showed a pH sensitivity of 649.04 mV pH-1, which is far beyond the Nernst limit. The non-ideal behavior of ISFETs, hysteresis, and drift effect also improved. These results show that the double-gate structure a-IGZO TFTs with engineered top-gate oxide can be a good candidate for cheap and disposable SEGISFET sensors.

  17. Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kim, Bongjun; Liang, Kelly; Dodabalapur, Ananth, E-mail: ananth.dodabalapur@engr.utexas.edu

    We show that double-gate ambipolar thin-film transistors can be operated to enhance minority carrier injection. The two gate potentials need to be significantly different for enhanced injection to be observed. This enhancement is highly beneficial in devices such as light-emitting transistors where balanced electron and hole injections lead to optimal performance. With ambipolar single-walled carbon nanotube semiconductors, we demonstrate that higher ambipolar currents are attained at lower source-drain voltages, which is desired for portable electronic applications, by employing double-gate structures. In addition, when the two gates are held at the same potential, the expected advantages of the double-gate transistors suchmore » as enhanced on-current are also observed.« less

  18. Measurement of transverse emittance and coherence of double-gate field emitter array cathodes

    PubMed Central

    Tsujino, Soichiro; Das Kanungo, Prat; Monshipouri, Mahta; Lee, Chiwon; Miller, R.J. Dwayne

    2016-01-01

    Achieving small transverse beam emittance is important for high brightness cathodes for free electron lasers and electron diffraction and imaging experiments. Double-gate field emitter arrays with on-chip focussing electrode, operating with electrical switching or near infrared laser excitation, have been studied as cathodes that are competitive with photocathodes excited by ultraviolet lasers, but the experimental demonstration of the low emittance has been elusive. Here we demonstrate this for a field emitter array with an optimized double-gate structure by directly measuring the beam characteristics. Further we show the successful application of the double-gate field emitter array to observe the low-energy electron beam diffraction from suspended graphene in minimal setup. The observed low emittance and long coherence length are in good agreement with theory. These results demonstrate that our all-metal double-gate field emitters are highly promising for applications that demand extremely low-electron bunch-phase space volume and large transverse coherence. PMID:28008918

  19. Measurement of transverse emittance and coherence of double-gate field emitter array cathodes

    NASA Astrophysics Data System (ADS)

    Tsujino, Soichiro; Das Kanungo, Prat; Monshipouri, Mahta; Lee, Chiwon; Miller, R. J. Dwayne

    2016-12-01

    Achieving small transverse beam emittance is important for high brightness cathodes for free electron lasers and electron diffraction and imaging experiments. Double-gate field emitter arrays with on-chip focussing electrode, operating with electrical switching or near infrared laser excitation, have been studied as cathodes that are competitive with photocathodes excited by ultraviolet lasers, but the experimental demonstration of the low emittance has been elusive. Here we demonstrate this for a field emitter array with an optimized double-gate structure by directly measuring the beam characteristics. Further we show the successful application of the double-gate field emitter array to observe the low-energy electron beam diffraction from suspended graphene in minimal setup. The observed low emittance and long coherence length are in good agreement with theory. These results demonstrate that our all-metal double-gate field emitters are highly promising for applications that demand extremely low-electron bunch-phase space volume and large transverse coherence.

  20. Asymmetric underlap spacer layer enabled nanoscale double gate MOSFETs for design of ultra-wideband cascode amplifiers

    NASA Astrophysics Data System (ADS)

    Roy, Debapriya; Biswas, Abhijit

    2017-10-01

    Using extensive numerical analysis we investigate effects of asymmetric sidewall spacers on various device parameters of 20-nm double gate MOSFETs associated with analog/RF applications. Our studies show that the device with underlap drain-side spacer length LED of 10 nm and source-side spacer length LES of 5 nm shows improvement in terms of the peak value of transconductance efficiency, voltage gain Av, unity-gain cut-off frequency fT and maximum frequency of oscillations fMAX by 8.6%, 51.7%, 5% and 10.3%, respectively compared to the symmetric 5 nm underlap spacer device with HfO2 spacer of dielectric constant k = 22. Additionally, a higher spacer dielectric constant increases the peak Av while decreasing both peak fT and fMAX. The detailed physical insight is exploited to design a cascode amplifier which yields an ultra-wide gain bandwidth of 2.48 THz at LED = 10 nm with a SiO2 spacer.

  1. A pH sensor with a double-gate silicon nanowire field-effect transistor

    NASA Astrophysics Data System (ADS)

    Ahn, Jae-Hyuk; Kim, Jee-Yeon; Seol, Myeong-Lok; Baek, David J.; Guo, Zheng; Kim, Chang-Hoon; Choi, Sung-Jin; Choi, Yang-Kyu

    2013-02-01

    A pH sensor composed of a double-gate silicon nanowire field-effect transistor (DG Si-NW FET) is demonstrated. The proposed DG Si-NW FET allows the independent addressing of the gate voltage and hence improves the sensing capability through an application of asymmetric gate voltage between the two gates. One gate is a driving gate which controls the current flow, and the other is a supporting gate which amplifies the shift of the threshold voltage, which is a sensing metric, and which arises from changes in the pH. The pH signal is also amplified through modulation of the gate oxide thickness.

  2. Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique

    NASA Astrophysics Data System (ADS)

    Chaisantikulwat, W.; Mouis, M.; Ghibaudo, G.; Cristoloveanu, S.; Widiez, J.; Vinet, M.; Deleonibus, S.

    2007-11-01

    Double-gate transistor with ultra-thin body (UTB) has proved to offer advantages over bulk device for high-speed, low-power applications. There is thus a strong need to obtain an accurate understanding of carrier transport and mobility in such device. In this work, we report for the first time an experimental evidence of mobility enhancement in UTB double-gate (DG) MOSFETs using magnetoresistance mobility extraction technique. Mobility in planar DG transistor operating in single- and double-gate mode is compared. The influence of different scattering mechanisms in the channel is also investigated by obtaining mobility values at low temperatures. The results show a clear mobility improvement in double-gate mode compared to single-gate mode mobility at the same inversion charge density. This is explained by the role of volume inversion in ultra-thin body transistor operating in DG mode. Volume inversion is found to be especially beneficial in terms of mobility gain at low-inversion densities.

  3. Double gate impact ionization MOS transistor: Proposal and investigation

    NASA Astrophysics Data System (ADS)

    Yang, Zhaonian; Zhang, Yue; Yang, Yuan; Yu, Ningmei

    2017-02-01

    In this paper, a double gate impact ionization MOS (DG-IMOS) transistor with improved performance is proposed and investigated by TCAD simulation. In the proposed design, a second gate is introduced in a conventional impact ionization MOS (IMOS) transistor that lengthens the equivalent channel length and suppresses the band-to-band tunneling. The OFF-state leakage current is reduced by over four orders of magnitude. At the ON-state, the second gate is negatively biased in order to enhance the electric field in the intrinsic region. As a result, the operating voltage does not increase with the increase in the channel length. The simulation result verifies that the proposed DG-IMOS achieves a better switching characteristic than the conventional is achieved. Lastly, the application of the DG-IMOS is discussed theoretically.

  4. Robust Deterministic Controlled Phase-Flip Gate and Controlled-Not Gate Based on Atomic Ensembles Embedded in Double-Sided Optical Cavities

    NASA Astrophysics Data System (ADS)

    Liu, A.-Peng; Cheng, Liu-Yong; Guo, Qi; Zhang, Shou

    2018-02-01

    We first propose a scheme for controlled phase-flip gate between a flying photon qubit and the collective spin wave (magnon) of an atomic ensemble assisted by double-sided cavity quantum systems. Then we propose a deterministic controlled-not gate on magnon qubits with parity-check building blocks. Both the gates can be accomplished with 100% success probability in principle. Atomic ensemble is employed so that light-matter coupling is remarkably improved by collective enhancement. We assess the performance of the gates and the results show that they can be faithfully constituted with current experimental techniques.

  5. Optimal control of universal quantum gates in a double quantum dot

    NASA Astrophysics Data System (ADS)

    Castelano, Leonardo K.; de Lima, Emanuel F.; Madureira, Justino R.; Degani, Marcos H.; Maialle, Marcelo Z.

    2018-06-01

    We theoretically investigate electron spin operations driven by applied electric fields in a semiconductor double quantum dot (DQD) formed in a nanowire with longitudinal potential modulated by local gating. We develop a model that describes the process of loading and unloading the DQD taking into account the overlap between the electron wave function and the leads. Such a model considers the spatial occupation and the spin Pauli blockade in a time-dependent fashion due to the highly mixed states driven by the external electric field. Moreover, we present a road map based on the quantum optimal control theory (QOCT) to find a specific electric field that performs two-qubit quantum gates on a faster timescale and with higher possible fidelity. By employing the QOCT, we demonstrate the possibility of performing within high efficiency a universal set of quantum gates {cnot, H, and T } , where cnot is the controlled-not gate, H is the Hadamard gate, and T is the π /8 gate, even in the presence of the loading/unloading process and charge noise effects. Furthermore, by varying the intensity of the applied magnetic field B , the optimized fidelity of the gates oscillates with a period inversely proportional to the gate operation time tf. This behavior can be useful to attain higher fidelity for fast gate operations (>1 GHz) by appropriately choosing B and tf to produce a maximum of the oscillation.

  6. Low-Power and High-Speed Technique for logic Gates in 20nm Double-Gate FinFET Technology

    NASA Astrophysics Data System (ADS)

    Priydarshi, A.; Chattopadhyay, M. K.

    2016-10-01

    The FinFET is the leading example of multigate MOSFETS to substitute conventional single gate MOSFETs for ultimate scaling [1], The FinFET structure is a combination of a thin channel region and a double gate to suppress the short channel effects (SCEs) and Vthvariation [2], By using FinFET,figure of merits viz, ION, IOFF, output resistance, propagation delay, noise margin and leakage power, can be improved for ultra low power and high performance applications[3]. In this paper, a new high speed low power dynamic circuit design technique has been proposed using 20nm FinFETs. By applying the appropriate clock and sleep signal to the back gates of the FinFETs, the proposed circuit can efficiently control the dynamic power, During the pre-charging period, Vth of PMOS is controlled low so that a fast precharging can occur;

  7. A novel double gate MOSFET by symmetrical insulator packets with improved short channel effects

    NASA Astrophysics Data System (ADS)

    Ramezani, Zeinab; Orouji, Ali A.

    2018-03-01

    In this article, we study a novel double-gate SOI MOSFET structure incorporating insulator packets (IPs) at the junction between channel and source/drain (S/D) ends. The proposed MOSFET has great strength in inhibiting short channel effects and OFF-state current that are the main problems compared with conventional one due to the significant suppressed penetrations of both the lateral electric field and the carrier diffusion from the S/D into the channel. Improvement of the hot electron reliability, the ON to OFF drain current ratio, drain-induced barrier lowering, gate-induced drain leakage and threshold voltage over conventional double-gate SOI MOSFETs, i.e. without IPs, is displayed with the simulation results. This study is believed to improve the CMOS device reliability and is suitable for the low-power very-large-scale integration circuits.

  8. Wavelength-dependence of double optical gating for attosecond pulse generation

    NASA Astrophysics Data System (ADS)

    Tian, Jia; Li, Min; Yu, Ji-Zhou; Deng, Yong-Kai; Liu, Yun-Quan

    2014-10-01

    Both polarization gating (PG) and double optical gating (DOG) are productive methods to generate single attosecond (as) pulses. In this paper, considering the ground-state depletion effect, we investigate the wavelength-dependence of the DOG method in order to optimize the generation of single attosecond pulses for the future application. By calculating the ionization probabilities of the leading edge of the pulse at different driving laser wavelengths, we obtain the upper limit of duration for the driving laser pulse for the DOG setup. We find that the upper limit duration increases with the increase of laser wavelength. We further describe the technical method of choosing and calculating the thickness values of optical components for the DOG setup.

  9. A new DG nanoscale TFET based on MOSFETs by using source gate electrode: 2D simulation and an analytical potential model

    NASA Astrophysics Data System (ADS)

    Ramezani, Zeinab; Orouji, Ali A.

    2017-08-01

    This paper suggests and investigates a double-gate (DG) MOSFET, which emulates tunnel field effect transistors (M-TFET). We have combined this novel concept into a double-gate MOSFET, which behaves as a tunneling field effect transistor by work function engineering. In the proposed structure, in addition to the main gate, we utilize another gate over the source region with zero applied voltage and a proper work function to convert the source region from N+ to P+. We check the impact obtained by varying the source gate work function and source doping on the device parameters. The simulation results of the M-TFET indicate that it is a suitable case for a switching performance. Also, we present a two-dimensional analytic potential model of the proposed structure by solving the Poisson's equation in x and y directions and by derivatives from the potential profile; thus, the electric field is achieved. To validate our present model, we use the SILVACO ATLAS device simulator. The analytical results have been compared with it.

  10. Ultraclean single, double, and triple carbon nanotube quantum dots with recessed Re bottom gates

    NASA Astrophysics Data System (ADS)

    Jung, Minkyung; Schindele, Jens; Nau, Stefan; Weiss, Markus; Baumgartner, Andreas; Schoenenberger, Christian

    2014-03-01

    Ultraclean carbon nanotubes (CNTs) that are free from disorder provide a promising platform to manipulate single electron or hole spins for quantum information. Here, we demonstrate that ultraclean single, double, and triple quantum dots (QDs) can be formed reliably in a CNT by a straightforward fabrication technique. The QDs are electrostatically defined in the CNT by closely spaced metallic bottom gates deposited in trenches in Silicon dioxide by sputter deposition of Re. The carbon nanotubes are then grown by chemical vapor deposition (CVD) across the trenches and contacted using conventional electron beam lithography. The devices exhibit reproducibly the characteristics of ultraclean QDs behavior even after the subsequent electron beam lithography and chemical processing steps. We demonstrate the high quality using CNT devices with two narrow bottom gates and one global back gate. Tunable by the gate voltages, the device can be operated in four different regimes: i) fully p-type with ballistic transport between the outermost contacts (over a length of 700 nm), ii) clean n-type single QD behavior where a QD can be induced by either the left or the right bottom gate, iii) n-type double QD and iv) triple bipolar QD where the middle QD has opposite doping (p-type). Research at Basel is supported by the NCCR-Nano, NCCR-QIST, ERC project QUEST, and FP7 project SE2ND.

  11. Investigation of the novel attributes in double recessed gate SiC MESFETs at drain side

    NASA Astrophysics Data System (ADS)

    Orouji, Ali A.; Razavi, S. M.; Ebrahim Hosseini, Seyed; Amini Moghadam, Hamid

    2011-11-01

    In this paper, the potential impact of drain side-double recessed gate (DS-DRG) on silicon carbide (SiC)-based metal semiconductor field effect transistors (MESFETs) is studied. We investigate the device performance focusing on breakdown voltage, threshold voltage, drain current and dc output conductance with two-dimensional and two-carrier device simulation. Our simulation results demonstrate that the channel thickness under the gate in the drain side is an important factor in the breakdown voltage. Also, the positive shift in the threshold voltage for the DS-DRG structure is larger in comparison with that for the source side-double recessed gate (SS-DRG) SiC MESFET. The saturated drain current for the DS-DRG structure is larger compared to that for the SS-DRG structure. The maximum dc output conductance in the DS-DRG structure is smaller than that in the SS-DRG structure.

  12. On gate stack scalability of double-gate negative-capacitance FET with ferroelectric HfO2 for energy efficient sub-0.2 V operation

    NASA Astrophysics Data System (ADS)

    Jang, Kyungmin; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro

    2018-02-01

    We have investigated the gate stack scalability and energy efficiency of double-gate negative-capacitance FET (DGNCFET) with a CMOS-compatible ferroelectric HfO2 (FE:HfO2). Analytic model-based simulation is conducted to investigate the impacts of ferroelectric characteristic of FE:HfO2 and gate stack thickness on the I on/I off ratio of DGNCFET. DGNCFET has wider design window for the gate stack where higher I on/I off ratio can be achieved than DG classical MOSFET. Under a process-induced constraint with sub-10 nm gate length (L g), FE:HfO2-based DGNCFET still has a design point for high I on/I off ratio. With an optimized gate stack thickness for sub-10 nm L g, FE:HfO2-based DGNCFET has 2.5× higher energy efficiency than DG classical MOSFET even at ultralow operation voltage of sub-0.2 V.

  13. Gate-Tuned Thermoelectric Power in Black Phosphorus.

    PubMed

    Saito, Yu; Iizuka, Takahiko; Koretsune, Takashi; Arita, Ryotaro; Shimizu, Sunao; Iwasa, Yoshihiro

    2016-08-10

    The electric field effect is a useful means of elucidating intrinsic material properties as well as for designing functional devices. The electric-double-layer transistor (EDLT) enables the control of carrier density in a wide range, which is recently proved to be an effective tool for the investigation of thermoelectric properties. Here, we report the gate-tuning of thermoelectric power in a black phosphorus (BP) single crystal flake with the thickness of 40 nm. Using an EDLT configuration, we successfully control the thermoelectric power (S) and find that the S of ion-gated BP reached +510 μV/K at 210 K in the hole depleted state, which is much higher than the reported bulk single crystal value of +340 μV/K at 300 K. We compared this experimental data with the first-principles-based calculation and found that this enhancement is qualitatively explained by the effective thinning of the conduction channel of the BP flake and nonuniformity of the channel owing to the gate operation in a depletion mode. Our results provide new opportunities for further engineering BP as a thermoelectric material in nanoscale.

  14. Organic electrical double layer transistors gated with ionic liquids

    NASA Astrophysics Data System (ADS)

    Xie, Wei; Frisbie, C. Daniel

    2011-03-01

    Transport in organic semiconductors gated with several types of ionic liquids has been systematically studied at charge densities larger than 1013 cm-2 . We observe a pronounced maximum in channel conductance for both p-type and n-type organic single crystals which is attributed to carrier localization at the semiconductor-electrolyte interface. Carrier mobility, as well as charge density and dielectric capacitance are determined through displacement current measurement and capacitance-voltage measurement. By using a larger-sized and spherical anion, tris(pentafluoroethyl)trifluorophosphate (FAP), effective carrier mobility in rubrene can be enhanced substantially up to 3.2 cm2 V-1 s -1 . Efforts have been made to maximize the charge density in rubrene single crystals, and at low temperature when higher gate bias can be applied, charge density can more than double the amount of that at room temperature, reaching 8*1013 cm-2 holes (0.4 holes per rubrene molecule). NSF MRSEC program at the University of Minnesota.

  15. Gate-tunable resonant tunneling in double bilayer graphene heterostructures.

    PubMed

    Fallahazad, Babak; Lee, Kayoung; Kang, Sangwoo; Xue, Jiamin; Larentis, Stefano; Corbet, Christopher; Kim, Kyounghwan; Movva, Hema C P; Taniguchi, Takashi; Watanabe, Kenji; Register, Leonard F; Banerjee, Sanjay K; Tutuc, Emanuel

    2015-01-14

    We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.

  16. Impact of Lateral Straggle on the Analog/RF Performance of Asymmetric Gate Stack Double Gate MOSFET

    NASA Astrophysics Data System (ADS)

    Sivaram, Gollamudi Sai; Chakraborty, Shramana; Das, Rahul; Dasgupta, Arpan; Kundu, Atanu; Sarkar, Chandan K.

    2016-09-01

    This paper presents a systematic comparative study of Analog and RF performances of an underlapped double gate (U-DG) NMOSFET with Gate Stack (GS) for varying straggle lengths. Asymmetric underlap devices (A-U-DG) have been proposed as one of the remedies for reducing Short Channel Effects (SCE's) with the underlap being present towards the source for sub 20 nm devices. However, the Source to Drain (S/D) implant lateral diffusion leads to a variation in the effective underlap length. This paper investigates the impact of variation of straggle length on the Analog and RF parameters of the device. The RF performance is analyzed by considering the intrinsic capacitances (Cgd, Cgs), intrinsic resistances (Rgd, Rgs), transport delay (τm), inductance (Lsd), cutoff frequency (fT), and the maximum frequency of oscillations (fmax). The circuit performance of the devices are also studied. It is seen that the Analog and RF performances of the devices are improved by optimizing the S/D lateral straggle.

  17. Electrode influence on the number of oxygen vacancies at the gate/high-κ dielectric interface in nanoscale MIM capacitors

    NASA Astrophysics Data System (ADS)

    Stojanovska-Georgievska, Lihnida

    2015-02-01

    In this paper, a particular attention has been paid in determining the impact of the type of top electrode (the gate), on the overall characteristics of the examined metal-insulator-metal structures, that contain doped Ta2O5:Hf high-κ dielectric as an insulator. For that purpose MIM capacitors with different metal gates (conventional Al and also W, Au, Pt, Mo, TiN, Ta) were formed. The results obtained, consider both the influence of metal work function and oxygen affinity, as possible reasons for increasing of number of oxygen vacancies at the gate/dielectric interface. Here we use capacitance-voltage alteration (C-V measurements) under constant current stress (CCS) conditions as characterization technique. The measurements show grater creation of positive oxygen vacancies in the case of metal electrodes with high work function, like Au and Pt, for almost one order of magnitude. It is also indicative that these metals have also the lowest values of heat of oxygen formation, which also favors the creation of oxygen vacancies. All results are discussed taking into consideration the nanoscale thickness of the dielectric layer (of the order of 8 nm), implicating the stronger effect of interface properties on the overall behavior rather than the one originating from the bulk of material.

  18. Design of double gate vertical tunnel field effect transistor using HDB and its performance estimation

    NASA Astrophysics Data System (ADS)

    Seema; Chauhan, Sudakar Singh

    2018-05-01

    In this paper, we demonstrate the double gate vertical tunnel field-effect transistor using homo/hetero dielectric buried oxide (HDB) to obtain the optimized device characteristics. In this concern, the existence of double gate, HDB and electrode work-function engineering enhances DC performance and Analog/RF performance. The use of electrostatic doping helps to achieve higher on-current owing to occurrence of higher tunneling generation rate of charge carriers at the source/epitaxial interface. Further, lightly doped drain region and high- k dielectric below channel and drain region are responsible to suppress the ambipolar current. Simulated results clarifies that proposed device have achieved the tremendous performance in terms of driving current capability, steeper subthreshold slope (SS), drain induced barrier lowering (DIBL), hot carrier effects (HCEs) and high frequency parameters for better device reliability.

  19. Impact of negative capacitance effect on Germanium Double Gate pFET for enhanced immunity to interface trap charges

    NASA Astrophysics Data System (ADS)

    Bansal, Monika; Kaur, Harsupreet

    2018-05-01

    In this work, a comprehensive drain current model has been developed for long channel Negative Capacitance Germanium Double Gate p-type Field Effect Transistor (NCGe-DG-pFET) by using 1-D Poisson's equation and Landau-Khalatnikov equation. The model takes into account interface trap charges and by using the derived model various parameters such as surface potential, gain, gate capacitance, subthreshold swing, drain current, transconductance, output conductance and Ion/Ioff ratio have been obtained and it is demonstrated that by incorporating ferroelectric material as gate insulator with Ge-channel, subthreshold swing values less than 60 mV/dec can be achieved along with improved gate controllability and current drivability. Further, to critically analyze the advantages offered by NCGe-DG-pFET, a detailed comparison has been done with Germanium Double Gate p-type Field Effect Transistor (Ge-DG-pFET) and it is shown that NCGe-DG-pFET exhibits high gain, enhanced transport efficiency in channel, very less or negligible degradation in device characteristics due to interface trap charges as compared to Ge-DG-pFET. The analytical results so obtained show good agreement with simulated results obtained from Silvaco ATLAS TCAD tool.

  20. Air-gating and chemical-gating in transistors and sensing devices made from hollow TiO2 semiconductor nanotubes

    NASA Astrophysics Data System (ADS)

    Alivov, Yahya; Funke, Hans; Nagpal, Prashant

    2015-07-01

    Rapid miniaturization of electronic devices down to the nanoscale, according to Moore’s law, has led to some undesirable effects like high leakage current in transistors, which can offset additional benefits from scaling down. Development of three-dimensional transistors, by spatial extension in the third dimension, has allowed higher contact area with a gate electrode and better control over conductivity in the semiconductor channel. However, these devices do not utilize the large surface area and interfaces for new electronic functionality. Here, we demonstrate air gating and chemical gating in hollow semiconductor nanotube devices and highlight the potential for development of novel transistors that can be modulated using channel bias, gate voltage, chemical composition, and concentration. Using chemical gating, we reversibly altered the conductivity of nanoscaled semiconductor nanotubes (10-500 nm TiO2 nanotubes) by six orders of magnitude, with a tunable rectification factor (ON/OFF ratio) ranging from 1-106. While demonstrated air- and chemical-gating speeds were slow here (˜seconds) due to the mechanical-evacuation rate and size of our chamber, the small nanoscale volume of these hollow semiconductors can enable much higher switching speeds, limited by the rate of adsorption/desorption of molecules at semiconductor interfaces. These chemical-gating effects are completely reversible, additive between different chemical compositions, and can enable semiconductor nanoelectronic devices for ‘chemical transistors’, ‘chemical diodes’, and very high-efficiency sensing applications.

  1. Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices.

    PubMed

    Black, Jennifer M; Come, Jeremy; Bi, Sheng; Zhu, Mengyang; Zhao, Wei; Wong, Anthony T; Noh, Joo Hyon; Pudasaini, Pushpa R; Zhang, Pengfei; Okatan, Mahmut Baris; Dai, Sheng; Kalinin, Sergei V; Rack, Philip D; Ward, Thomas Zac; Feng, Guang; Balke, Nina

    2017-11-22

    Ionic liquid gating of transition metal oxides has enabled new states (magnetic, electronic, metal-insulator), providing fundamental insights into the physics of strongly correlated oxides. However, despite much research activity, little is known about the correlation of the structure of the liquids in contact with the transition metal oxide surface, its evolution with the applied electric potential, and its correlation with the measured electronic properties of the oxide. Here, we investigate the structure of an ionic liquid at a semiconducting oxide interface during the operation of a thin film transistor where the electrical double layer gates the device using experiment and theory. We show that the transition between the ON and OFF states of the amorphous indium gallium zinc oxide transistor is accompanied by a densification and preferential spatial orientation of counterions at the oxide channel surface. This process occurs in three distinct steps, corresponding to ion orientations, and consequently, regimes of different electrical conductivity. The reason for this can be found in the surface charge densities on the oxide surface when different ion arrangements are present. Overall, the field-effect gating process is elucidated in terms of the interfacial ionic liquid structure, and this provides unprecedented insight into the working of a liquid gated transistor linking the nanoscopic structure to the functional properties. This knowledge will enable both new ionic liquid design as well as advanced device concepts.

  2. Electric-field control of conductance in metal quantum point contacts by electric-double-layer gating

    NASA Astrophysics Data System (ADS)

    Shibata, K.; Yoshida, K.; Daiguji, K.; Sato, H.; , T., Ii; Hirakawa, K.

    2017-10-01

    An electric-field control of quantized conductance in metal (gold) quantum point contacts (QPCs) is demonstrated by adopting a liquid-gated electric-double-layer (EDL) transistor geometry. Atomic-scale gold QPCs were fabricated by applying the feedback-controlled electrical break junction method to the gold nanojunction. The electric conductance in gold QPCs shows quantized conductance plateaus and step-wise increase/decrease by the conductance quantum, G0 = 2e2/h, as EDL-gate voltage is swept, demonstrating a modulation of the conductance of gold QPCs by EDL gating. The electric-field control of conductance in metal QPCs may open a way for their application to local charge sensing at room temperature.

  3. Enhancing the pH sensitivity by laterally synergic modulation in dual-gate electric-double-layer transistors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Liu, Ning; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201; Hui Liu, Yang

    2015-02-16

    The sensitivity of a standard ion-sensitive field-effect transistor is limited to be 59.2 mV/pH (Nernst limit) at room temperature. Here, a concept based on laterally synergic electric-double-layer (EDL) modulation is proposed in order to overcome the Nernst limit. Indium-zinc-oxide EDL transistors with two laterally coupled gates are fabricated, and the synergic modulation behaviors of the two asymmetric gates are investigated. A high sensitivity of ∼168 mV/pH is realized in the dual-gate operation mode. Laterally synergic modulation in oxide-based EDL transistors is interesting for high-performance bio-chemical sensors.

  4. Defect Dynamics in Artificial Colloidal Ice: Real-Time Observation, Manipulation, and Logic Gate.

    PubMed

    Loehr, Johannes; Ortiz-Ambriz, Antonio; Tierno, Pietro

    2016-10-14

    We study the defect dynamics in a colloidal spin ice system realized by filling a square lattice of topographic double well islands with repulsively interacting magnetic colloids. We focus on the contraction of defects in the ground state, and contraction or expansion in a metastable biased state. Combining real-time experiments with simulations, we prove that these defects behave like emergent topological monopoles obeying a Coulomb law with an additional line tension. We further show how to realize a completely resettable "nor" gate, which provides guidelines for fabrication of nanoscale logic devices based on the motion of topological magnetic monopoles.

  5. Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices

    DOE PAGES

    Black, Jennifer M.; Come, Jeremy; Bi, Sheng; ...

    2017-10-24

    Ionic liquid gating of transition metal oxides has enabled new states (magnetic, electronic, metal–insulator), providing fundamental insights into the physics of strongly correlated oxides. However, despite much research activity, little is known about the correlation of the structure of the liquids in contact with the transition metal oxide surface, its evolution with the applied electric potential, and its correlation with the measured electronic properties of the oxide. Here, we investigate the structure of an ionic liquid at a semiconducting oxide interface during the operation of a thin film transistor where the electrical double layer gates the device using experiment andmore » theory. We show that the transition between the ON and OFF states of the amorphous indium gallium zinc oxide transistor is accompanied by a densification and preferential spatial orientation of counterions at the oxide channel surface. This process occurs in three distinct steps, corresponding to ion orientations, and consequently, regimes of different electrical conductivity. The reason for this can be found in the surface charge densities on the oxide surface when different ion arrangements are present. Overall, the field-effect gating process is elucidated in terms of the interfacial ionic liquid structure, and this provides unprecedented insight into the working of a liquid gated transistor linking the nanoscopic structure to the functional properties. This knowledge will enable both new ionic liquid design as well as advanced device concepts.« less

  6. Role of Electrical Double Layer Structure in Ionic Liquid Gated Devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Black, Jennifer M.; Come, Jeremy; Bi, Sheng

    Ionic liquid gating of transition metal oxides has enabled new states (magnetic, electronic, metal–insulator), providing fundamental insights into the physics of strongly correlated oxides. However, despite much research activity, little is known about the correlation of the structure of the liquids in contact with the transition metal oxide surface, its evolution with the applied electric potential, and its correlation with the measured electronic properties of the oxide. Here, we investigate the structure of an ionic liquid at a semiconducting oxide interface during the operation of a thin film transistor where the electrical double layer gates the device using experiment andmore » theory. We show that the transition between the ON and OFF states of the amorphous indium gallium zinc oxide transistor is accompanied by a densification and preferential spatial orientation of counterions at the oxide channel surface. This process occurs in three distinct steps, corresponding to ion orientations, and consequently, regimes of different electrical conductivity. The reason for this can be found in the surface charge densities on the oxide surface when different ion arrangements are present. Overall, the field-effect gating process is elucidated in terms of the interfacial ionic liquid structure, and this provides unprecedented insight into the working of a liquid gated transistor linking the nanoscopic structure to the functional properties. This knowledge will enable both new ionic liquid design as well as advanced device concepts.« less

  7. Nanoscale MOS devices: device parameter fluctuations and low-frequency noise (Invited Paper)

    NASA Astrophysics Data System (ADS)

    Wong, Hei; Iwai, Hiroshi; Liou, J. J.

    2005-05-01

    It is well-known in conventional MOS transistors that the low-frequency noise or flicker noise is mainly contributed by the trapping-detrapping events in the gate oxide and the mobility fluctuation in the surface channel. In nanoscale MOS transistors, the number of trapping-detrapping events becomes less important because of the large direct tunneling current through the ultrathin gate dielectric which reduces the probability of trapping-detrapping and the level of leakage current fluctuation. Other noise sources become more significant in nanoscale devices. The source and drain resistance noises have greater impact on the drain current noise. Significant contribution of the parasitic bipolar transistor noise in ultra-short channel and channel mobility fluctuation to the channel noise are observed. The channel mobility fluctuation in nanoscale devices could be due to the local composition fluctuation of the gate dielectric material which gives rise to the permittivity fluctuation along the channel and results in gigantic channel potential fluctuation. On the other hand, the statistical variations of the device parameters across the wafer would cause the noise measurements less accurate which will be a challenge for the applicability of analytical flicker noise model as a process or device evaluation tool for nanoscale devices. Some measures for circumventing these difficulties are proposed.

  8. Electro-optical graphene plasmonic logic gates.

    PubMed

    Ooi, Kelvin J A; Chu, Hong Son; Bai, Ping; Ang, Lay Kee

    2014-03-15

    The versatile control of graphene's plasmonic modes via an external gate-voltage inspires us to design efficient electro-optical graphene plasmonic logic gates at the midinfrared wavelengths. We show that these devices are superior to the conventional optical logic gates because the former possess cut-off states and interferometric effects. Moreover, the designed six basic logic gates (i.e., NOR/AND, NAND/OR, XNOR/XOR) achieved not only ultracompact size lengths of less than λ/28 with respect to the operating wavelength of 10 μm, but also a minimum extinction ratio as high as 15 dB. These graphene plasmonic logic gates are potential building blocks for future nanoscale midinfrared photonic integrated circuits.

  9. Compact modeling of nanoscale triple-gate junctionless transistors covering drift-diffusion to quasi-ballistic carrier transport

    NASA Astrophysics Data System (ADS)

    Oproglidis, T. A.; Karatsori, T. A.; Barraud, S.; Ghibaudo, G.; Dimitriadis, C. A.

    2018-04-01

    In this work, we extend our analytical compact model for nanoscale junctionless triple-gate (JL TG) MOSFETs, capturing carrier transport from drift-diffusion to quasi-ballistic regime. This is based on a simple formulation of the low-field mobility extracted from experimental data using the Y-function method, taking into account the ballistic carrier motion and an increased carrier scattering in process-induced defects near the source/drain regions. The case of a Schottky junction in non-ideal ohmic contact at the drain side was also taken into account by modifying the threshold voltage and ideality factor of the JL transistor. The model is validated with experimental data for n-channel JL TG MOSFETs with channel length varying from 95 down to 25 nm. It can be easily implemented as a compact model for use in Spice circuit simulators.

  10. Low-voltage electric-double-layer paper transistors gated by microporous SiO2 processed at room temperature

    NASA Astrophysics Data System (ADS)

    Sun, Jia; Wan, Qing; Lu, Aixia; Jiang, Jie

    2009-11-01

    Battery drivable low-voltage SnO2-based paper thin-film transistors with a near-zero threshold voltage (Vth=0.06 V) gated by microporous SiO2 dielectric with electric-double-layer (EDL) effect are fabricated at room temperature. The operating voltage is found to be as low as 1.5 V due to the huge gate specific capacitance (1.34 μF/cm2 at 40 Hz) related to EDL formation. The subthreshold gate voltage swing and current on/off ratio is found to be 82 mV/decade and 2.0×105, respectively. The electron field-effect mobility is estimated to be 47.3 cm2/V s based on the measured gate specific capacitance at 40 Hz.

  11. Design architecture of double spiral interdigitated electrode with back gate electrode for biosensor application

    NASA Astrophysics Data System (ADS)

    Fathil, M. F. M.; Arshad, M. K. Md.; Hashim, U.; Ruslinda, A. R.; Gopinath, Subash C. B.; M. Nuzaihan M., N.; Ayub, R. M.; Adzhri, R.; Zaki, M.; Azman, A. H.

    2016-07-01

    This paper presents the preparation method of photolithography chrome mask design used in fabrication process of double spiral interdigitated electrode with back gate biasing based biosensor. By learning the fabrication process flow of the biosensor, the chrome masks are designed through drawing using the AutoCAD software. The overall width and length of the device is optimized at 7.0 mm and 10.0 mm, respectively. Fabrication processes of the biosensor required three chrome masks, which included back gate opening, spiral IDE formation, and passivation area formation. The complete chrome masks design will be sent for chrome mask fabrication and for future use in biosensor fabrication.

  12. Variable N-type negative resistance in an injection-gated double-injection diode

    NASA Technical Reports Server (NTRS)

    Kapoor, A. K.; Henderson, H. T.

    1981-01-01

    Double-injection (DI) switching devices consist of p+ and n+ contacts (for hole and electron injection, respectively), separated by a near intrinsic semiconductor region containing deep traps. Under proper conditions, these devices exhibit S-type differential negative resistance (DNR) similar to silicon-controlled rectifiers. With the added influence of a p+ gate appropriately placed between the anode (p+) and cathode (n+), the current-voltage characteristic of the device has been manipulated for the first time to exhibit a variable N-type DNR. The anode current and the anode-to-cathode voltage levels at which this N-type DNR is observed can be varied by changing the gate-to-cathode bias. In essence, the classical S-type DI diode can be electronically transformed into an N-type diode. A first-order phenomenological model is proposed for the N-type DNR.

  13. Performance analysis of junction-less double Gate n-p-n impact ionization MOS transistor (JLDG n-IMOS)

    NASA Astrophysics Data System (ADS)

    Chauhan, Manvendra Singh; Chauhan, R. K.

    2018-04-01

    This paper demonstrates a Junction-less Double Gate n-p-n Impact ionization MOS transistor (JLDG n-IMOS) on a very light doped p-type silicon body. Device structure proposed in the paper is based on charge plasma concept. There is no metallurgical junctions in the proposed device and does not need any impurity doping to create the drain and source regions. Due to doping-less nature, the fabrication process is simple for JLDG n-IMOS. The double gate engineering in proposed device leads to reduction in avalanche breakdown via impact ionization, generating large number of carriers in drain-body junction, resulting high ION current, small IOFF current and great improvement in ION/IOFF ratio. The simulation and examination of the proposed device have been performed on ATLAS device simulatorsoftware.

  14. Nanofabrication of 10-nm T-shaped gates using a double patterning process with electron beam lithography and dry etch

    NASA Astrophysics Data System (ADS)

    Shao, Jinhai; Deng, Jianan; Lu, W.; Chen, Yifang

    2017-07-01

    A process to fabricate T-shaped gates with the footprint scaling down to 10 nm using a double patterning procedure is reported. One of the keys in this process is to separate the definition of the footprint from that for the gate-head so that the proximity effect originated from electron forward scattering in the resist is significantly minimized, enabling us to achieve as narrow as 10-nm foot width. Furthermore, in contrast to the reported technique for 10-nm T-shaped profile in resist, this process utilizes a metallic film with a nanoslit as an etch mask to form a well-defined 10-nm-wide foot in a SiNx layer by reactive ion etch. Such a double patterning process has demonstrated enhanced reliability. The detailed process is comprehensively described, and its advantages and limitations are discussed. Nanofabrication of InP-based high-electron-mobility transistors using the developed process for 10- to 20-nm T-shaped gates is currently under the way.

  15. Designing Nanoscale Counter Using Reversible Gate Based on Quantum-Dot Cellular Automata

    NASA Astrophysics Data System (ADS)

    Moharrami, Elham; Navimipour, Nima Jafari

    2018-04-01

    Some new technologies such as Quantum-dot Cellular Automata (QCA) is suggested to solve the physical limits of the Complementary Metal-Oxide Semiconductor (CMOS) technology. The QCA as one of the novel technologies at nanoscale has potential applications in future computers. This technology has some advantages such as minimal size, high speed, low latency, and low power consumption. As a result, it is used for creating all varieties of memory. Counter circuits as one of the important circuits in the digital systems are composed of some latches, which are connected to each other in series and actually they count input pulses in the circuit. On the other hand, the reversible computations are very important because of their ability in reducing energy in nanometer circuits. Improving the energy efficiency, increasing the speed of nanometer circuits, increasing the portability of system, making smaller components of the circuit in a nuclear size and reducing the power consumption are considered as the usage of reversible logic. Therefore, this paper aims to design a two-bit reversible counter that is optimized on the basis of QCA using an improved reversible gate. The proposed reversible structure of 2-bit counter can be increased to 3-bit, 4-bit and more. The advantages of the proposed design have been shown using QCADesigner in terms of the delay in comparison with previous circuits.

  16. 2D Quantum Transport Modeling in Nanoscale MOSFETs

    NASA Technical Reports Server (NTRS)

    Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan

    2001-01-01

    With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density- gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Quantum simulations are focused on MIT 25, 50 and 90 nm "well- tempered" MOSFETs and compared to classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are quantitatively consistent with I D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and sub-threshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

  17. Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement

    NASA Astrophysics Data System (ADS)

    Poorvasha, S.; Lakshmi, B.

    2018-05-01

    In this paper, RF performance analysis of InAs-based double gate (DG) tunnel field effect transistors (TFETs) is investigated in both qualitative and quantitative fashion. This investigation is carried out by varying the geometrical and doping parameters of TFETs to extract various RF parameters, unity gain cut-off frequency (f t), maximum oscillation frequency (f max), intrinsic gain and admittance (Y) parameters. An asymmetric gate oxide is introduced in the gate-drain overlap and compared with that of DG TFETs. Higher ON-current (I ON) of about 0.2 mA and less leakage current (I OFF) of 29 fA is achieved for DG TFET with gate-drain overlap. Due to increase in transconductance (g m), higher f t and intrinsic gain is attained for DG TFET with gate-drain overlap. Higher f max of 985 GHz is obtained for drain doping of 5 × 1017 cm‑3 because of the reduced gate-drain capacitance (C gd) with DG TFET with gate-drain overlap. In terms of Y-parameters, gate oxide thickness variation offers better performance due to the reduced values of C gd. A second order numerical polynomial model is generated for all the RF responses as a function of geometrical and doping parameters. The simulation results are compared with this numerical model where the predicted values match with the simulated values. Project supported by the Department of Science and Technology, Government of India under SERB Scheme (No. SERB/F/2660).

  18. DNA and RNA sequencing by nanoscale reading through programmable electrophoresis and nanoelectrode-gated tunneling and dielectric detection

    DOEpatents

    Lee, James W.; Thundat, Thomas G.

    2005-06-14

    An apparatus and method for performing nucleic acid (DNA and/or RNA) sequencing on a single molecule. The genetic sequence information is obtained by probing through a DNA or RNA molecule base by base at nanometer scale as though looking through a strip of movie film. This DNA sequencing nanotechnology has the theoretical capability of performing DNA sequencing at a maximal rate of about 1,000,000 bases per second. This enhanced performance is made possible by a series of innovations including: novel applications of a fine-tuned nanometer gap for passage of a single DNA or RNA molecule; thin layer microfluidics for sample loading and delivery; and programmable electric fields for precise control of DNA or RNA movement. Detection methods include nanoelectrode-gated tunneling current measurements, dielectric molecular characterization, and atomic force microscopy/electrostatic force microscopy (AFM/EFM) probing for nanoscale reading of the nucleic acid sequences.

  19. Photovoltaic and photothermoelectric effect in a double-gated WSe2 device.

    PubMed

    Groenendijk, Dirk J; Buscema, Michele; Steele, Gary A; Michaelis de Vasconcellos, Steffen; Bratschitsch, Rudolf; van der Zant, Herre S J; Castellanos-Gomez, Andres

    2014-10-08

    Tungsten diselenide (WSe2), a semiconducting transition metal dichalcogenide (TMDC), shows great potential as active material in optoelectronic devices due to its ambipolarity and direct bandgap in its single-layer form. Recently, different groups have exploited the ambipolarity of WSe2 to realize electrically tunable PN junctions, demonstrating its potential for digital electronics and solar cell applications. In this Letter, we focus on the different photocurrent generation mechanisms in a double-gated WSe2 device by measuring the photocurrent (and photovoltage) as the local gate voltages are varied independently in combination with above- and below-bandgap illumination. This enables us to distinguish between two main photocurrent generation mechanisms, the photovoltaic and photothermoelectric effect. We find that the dominant mechanism depends on the defined gate configuration. In the PN and NP configurations, photocurrent is mainly generated by the photovoltaic effect and the device displays a maximum responsivity of 0.70 mA/W at 532 nm illumination and rise and fall times close to 10 ms. Photocurrent generated by the photothermoelectric effect emerges in the PP configuration and is a factor of 2 larger than the current generated by the photovoltaic effect (in PN and NP configurations). This demonstrates that the photothermoelectric effect can play a significant role in devices based on WSe2 where a region of strong optical absorption, caused by, for example, an asymmetry in flake thickness or optical absorption of the electrodes, generates a sizable thermal gradient upon illumination.

  20. Tunable Mobility in Double-Gated MoTe2 Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites.

    PubMed

    Ji, Hyunjin; Joo, Min-Kyu; Yi, Hojoon; Choi, Homin; Gul, Hamza Zad; Ghimire, Mohan Kumar; Lim, Seong Chu

    2017-08-30

    There is a general consensus that the carrier mobility in a field-effect transistor (FET) made of semiconducting transition-metal dichalcogenides (s-TMDs) is severely degraded by the trapping/detrapping and Coulomb scattering of carriers by ionic charges in the gate oxides. Using a double-gated (DG) MoTe 2 FET, we modulated and enhanced the carrier mobility by adjusting the top- and bottom-gate biases. The relevant mechanism for mobility tuning in this device was explored using static DC and low-frequency (LF) noise characterizations. In the investigations, LF-noise analysis revealed that for a strong back-gate bias the Coulomb scattering of carriers by ionized traps in the gate dielectrics is strongly screened by accumulation charges. This significantly reduces the electrostatic scattering of channel carriers by the interface trap sites, resulting in increased mobility. The reduction of the number of effective trap sites also depends on the gate bias, implying that owing to the gate bias, the carriers are shifted inside the channel. Thus, the number of active trap sites decreases as the carriers are repelled from the interface by the gate bias. The gate-controlled Coulomb-scattering parameter and the trap-site density provide new handles for improving the carrier mobility in TMDs, in a fundamentally different way from dielectric screening observed in previous studies.

  1. 2D Quantum Mechanical Study of Nanoscale MOSFETs

    NASA Technical Reports Server (NTRS)

    Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, B.; Kwak, Dochan (Technical Monitor)

    2000-01-01

    With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

  2. Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography

    PubMed Central

    Dehzangi, Arash; Abedini, Alam; Abdullah, Ahmad Makarimi; Saion, Elias; Hutagalung, Sabar D; Hamidon, Mohd N; Hassan, Jumiah

    2012-01-01

    Summary A double-lateral-gate p-type junctionless transistor is fabricated on a low-doped (1015) silicon-on-insulator wafer by a lithography technique based on scanning probe microscopy and two steps of wet chemical etching. The experimental transfer characteristics are obtained and compared with the numerical characteristics of the device. The simulation results are used to investigate the pinch-off mechanism, from the flat band to the off state. The study is based on the variation of the carrier density and the electric-field components. The device is a pinch-off transistor, which is normally in the on state and is driven into the off state by the application of a positive gate voltage. We demonstrate that the depletion starts from the bottom corner of the channel facing the gates and expands toward the center and top of the channel. Redistribution of the carriers due to the electric field emanating from the gates creates an electric field perpendicular to the current, toward the bottom of the channel, which provides the electrostatic squeezing of the current. PMID:23365794

  3. Simultaneous control of thermoelectric properties in p- and n-type materials by electric double-layer gating: New design for thermoelectric device

    NASA Astrophysics Data System (ADS)

    Takayanagi, Ryohei; Fujii, Takenori; Asamitsu, Atsushi

    2015-05-01

    We report a novel design of a thermoelectric device that can control the thermoelectric properties of p- and n-type materials simultaneously by electric double-layer gating. Here, p-type Cu2O and n-type ZnO were used as the positive and negative electrodes of the electric double-layer capacitor structure. When a gate voltage was applied between the two electrodes, holes and electrons accumulated on the surfaces of Cu2O and ZnO, respectively. The thermopower was measured by applying a thermal gradient along the accumulated layer on the electrodes. We demonstrate here that the accumulated layers worked as a p-n pair of the thermoelectric device.

  4. Analytical model of nanoscale junctionless transistors towards controlling of short channel effects through source/drain underlap and channel thickness engineering

    NASA Astrophysics Data System (ADS)

    Roy, Debapriya; Biswas, Abhijit

    2018-01-01

    We develop a 2D analytical subthreshold model for nanoscale double-gate junctionless transistors (DGJLTs) with gate-source/drain underlap. The model is validated using well-calibrated TCAD simulation deck obtained by comparing experimental data in the literature. To analyze and control short-channel effects, we calculate the threshold voltage, drain induced barrier lowering (DIBL) and subthreshold swing of DGJLTs using our model and compare them with corresponding simulation value at channel length of 20 nm with channel thickness tSi ranging 5-10 nm, gate-source/drain underlap (LSD) values 0-7 nm and source/drain doping concentrations (NSD) ranging 5-12 × 1018 cm-3. As tSi reduces from 10 to 5 nm DIBL drops down from 42.5 to 0.42 mV/V at NSD = 1019 cm-3 and LSD = 5 nm in contrast to decrement from 71 to 4.57 mV/V without underlap. For a lower tSiDIBL increases marginally with increasing NSD. The subthreshold swing reduces more rapidly with thinning of channel thickness rather than increasing LSD or decreasing NSD.

  5. Nanoscale Multigate TiN Metal Nanocrystal Memory Using High-k Blocking Dielectric and High-Work-Function Gate Electrode Integrated on Silcon-on-Insulator Substrate

    NASA Astrophysics Data System (ADS)

    Lu, Chi-Pei; Luo, Cheng-Kei; Tsui, Bing-Yue; Lin, Cha-Hsin; Tzeng, Pei-Jer; Wang, Ching-Chiun; Tsai, Ming-Jinn

    2009-04-01

    In this study, a charge-trapping-layer-engineered nanoscale n-channel trigate TiN nanocrystal nonvolatile memory was successfully fabricated on silicon-on-insulator (SOI) wafer. An Al2O3 high-k blocking dielectric layer and a P+ polycrystalline silicon gate electrode were used to obtain low operation voltage and suppress the back-side injection effect, respectively. TiN nanocrystals were formed by annealing TiN/Al2O3 nanolaminates deposited by an atomic layer deposition system. The memory characteristics of various samples with different TiN wetting layer thicknesses, post-deposition annealing times, and blocking oxide thicknesses were also investigated. The sample with a thicker wetting layer exhibited a much larger memory window than other samples owing to its larger nanocrystal size. Good retention with a mere 12% charge loss for up to 10 years and high endurance were also obtained. Furthermore, gate disturbance and read disturbance were measured with very small charge migrations after a 103 s stressing bias.

  6. Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

    NASA Astrophysics Data System (ADS)

    Zhi, Jiang; Yi-Qi, Zhuang; Cong, Li; Ping, Wang; Yu-Qi, Liu

    2016-02-01

    Trap-assisted tunneling (TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor (TFET). In this paper, we assess subthreshold performance of double gate TFET (DG-TFET) through a band-to-band tunneling (BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile (Dit) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current. Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).

  7. Extended-gate-type IGZO electric-double-layer TFT immunosensor with high sensitivity and low operation voltage

    NASA Astrophysics Data System (ADS)

    Liang, Lingyan; Zhang, Shengnan; Wu, Weihua; Zhu, Liqiang; Xiao, Hui; Liu, Yanghui; Zhang, Hongliang; Javaid, Kashif; Cao, Hongtao

    2016-10-01

    An immunosensor is proposed based on the indium-gallium-zinc-oxide (IGZO) electric-double-layer thin-film transistor (EDL TFT) with a separating extended gate. The IGZO EDL TFT has a field-effect mobility of 24.5 cm2 V-1 s-1 and an operation voltage less than 1.5 V. The sensors exhibit the linear current response to label-free target immune molecule in the concentrations ranging from 1.6 to 368 × 10-15 g/ml with a detection limit of 1.6 × 10-15 g/ml (0.01 fM) under an ultralow operation voltage of 0.5 V. The IGZO TFT component demonstrates a consecutive assay stability and recyclability due to the unique structure with the separating extended gate. With the excellent electrical properties and the potential for plug-in-card-type multifunctional sensing, extended-gate-type IGZO EDL TFTs can be promising candidates for the development of a label-free biosensor for public health applications.

  8. Designing a Double-Pole Nanoscale Relay Based on a Carbon Nanotube: A Theoretical Study

    NASA Astrophysics Data System (ADS)

    Mu, Weihua; Ou-Yang, Zhong-can; Dresselhaus, Mildred S.

    2017-08-01

    We theoretically investigate a novel and powerful double-pole nanoscale relay based on a carbon nanotube, which is one of the nanoelectromechanical switches being able to work under the strong nuclear radiation, and analyze the physical mechanism of the operating stages in the operation, including "pull in," "connection," and "pull back," as well as the key factors influencing the efficiency of the devices. We explicitly provide the analytical expression of the two important operation voltages, Vpull in and Vpull back , therefore clearly showing the dependence of the material properties and geometry of the present devices by the analytical method from basic physics, avoiding complex numerical calculations. Our method is easy to use in preparing the design guide for fabricating the present device and other nanoelectromechanical devices.

  9. Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors.

    PubMed

    Wan, Chang Jin; Liu, Yang Hui; Zhu, Li Qiang; Feng, Ping; Shi, Yi; Wan, Qing

    2016-04-20

    In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation.

  10. Ferroelectric polarization induces electric double layer bistability in electrolyte-gated field-effect transistors.

    PubMed

    Fabiano, Simone; Crispin, Xavier; Berggren, Magnus

    2014-01-08

    The dense surface charges expressed by a ferroelectric polymeric thin film induce ion displacement within a polyelectrolyte layer and vice versa. This is because the density of dipoles along the surface of the ferroelectric thin film and its polarization switching time matches that of the (Helmholtz) electric double layers formed at the ferroelectric/polyelectrolyte and polyelectrolyte/semiconductor interfaces. This combination of materials allows for introducing hysteresis effects in the capacitance of an electric double layer capacitor. The latter is advantageously used to control the charge accumulation in the semiconductor channel of an organic field-effect transistor. The resulting memory transistors can be written at a gate voltage of around 7 V and read out at a drain voltage as low as 50 mV. The technological implication of this large difference between write and read-out voltages lies in the non-destructive reading of this ferroelectric memory.

  11. High-voltage lateral double-implanted MOSFETs implemented on high-purity semi-insulating 4H-SiC substrates with gate field plates

    NASA Astrophysics Data System (ADS)

    Seok, Ogyun; Kim, Hyoung Woo; Moon, Jeong Hyun; Lee, Hyun-Su; Bahng, Wook

    2018-06-01

    Lateral double-implanted MOSFETs (LDIMOSFETs) fabricated on on-axis high-purity semi-insulating (HPSI) 4H-SiC substrates with gate field plates have been demonstrated for the enhancement of reverse blocking capability. The effects of gate field plate on LDIMOSFET were analyzed by simulation and experimental methods. The electric field concentration at the gate edge was successfully suppressed by a gate field plate. A high breakdown voltage of 934 V and a figure of merit of 14.6 MW/cm2 were achieved at L FP of 2 µm and L drift of 15 µm, while those of the conventional device without a gate field plate were 744 V and 13.3 MW/cm2, respectively. Also, the fabricated device shows stable blocking characteristics at a high temperature of 250 °C. The drain leakage was increased by only 22% at 250 °C compared with that at room temperature.

  12. An analytical drain current model for symmetric double-gate MOSFETs

    NASA Astrophysics Data System (ADS)

    Yu, Fei; Huang, Gongyi; Lin, Wei; Xu, Chuanzhong

    2018-04-01

    An analytical surface-potential-based drain current model of symmetric double-gate (sDG) MOSFETs is described as a SPICE compatible model in this paper. The continuous surface and central potentials from the accumulation to the strong inversion regions are solved from the 1-D Poisson's equation in sDG MOSFETs. Furthermore, the drain current is derived from the charge sheet model as a function of the surface potential. Over a wide range of terminal voltages, doping concentrations, and device geometries, the surface potential calculation scheme and drain current model are verified by solving the 1-D Poisson's equation based on the least square method and using the Silvaco Atlas simulation results and experimental data, respectively. Such a model can be adopted as a useful platform to develop the circuit simulator and provide the clear understanding of sDG MOSFET device physics.

  13. A compact quantum correction model for symmetric double gate metal-oxide-semiconductor field-effect transistor

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Cho, Edward Namkyu; Shin, Yong Hyeon; Yun, Ilgu, E-mail: iyun@yonsei.ac.kr

    2014-11-07

    A compact quantum correction model for a symmetric double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. The compact quantum correction model is proposed from the concepts of the threshold voltage shift (ΔV{sub TH}{sup QM}) and the gate capacitance (C{sub g}) degradation. First of all, ΔV{sub TH}{sup QM} induced by quantum mechanical (QM) effects is modeled. The C{sub g} degradation is then modeled by introducing the inversion layer centroid. With ΔV{sub TH}{sup QM} and the C{sub g} degradation, the QM effects are implemented in previously reported classical model and a comparison between the proposed quantum correction model and numerical simulationmore » results is presented. Based on the results, the proposed quantum correction model can be applicable to the compact model of DG MOSFET.« less

  14. Study of Gaussian Doped Double Gate JunctionLess (GD-DG-JL) transistor including source drain depletion length: Model for sub-threshold behavior

    NASA Astrophysics Data System (ADS)

    Kumari, Vandana; Kumar, Ayush; Saxena, Manoj; Gupta, Mridula

    2018-01-01

    The sub-threshold model formulation of Gaussian Doped Double Gate JunctionLess (GD-DG-JL) FET including source/drain depletion length is reported in the present work under the assumption that the ungated regions are fully depleted. To provide deeper insight into the device performance, the impact of gaussian straggle, channel length, oxide and channel thickness and high-k gate dielectric has been studied using extensive TCAD device simulation.

  15. Dual-gate GaAs FET switches

    NASA Astrophysics Data System (ADS)

    Vorhaus, J. L.; Fabian, W.; Ng, P. B.; Tajima, Y.

    1981-02-01

    A set of multi-pole, multi-throw switch devices consisting of dual-gate GaAs FET's is described. Included are single-pole, single-throw (SPST), double-pole, double-throw (DPDT), and single-pole four-throw (SP4T) switches. Device fabrication and measurement techniques are discussed. The device models for these switches were based on an equivalent circuit of a dual-gate FET. The devices were found to have substantial gain in X-band and low Ku-band.

  16. Current nanoscience and nanoengineering at the Center for Nanoscale Science and Engineering

    NASA Astrophysics Data System (ADS)

    Hermann, A. M.; Singh, R. S.; Singh, V. P.

    2006-07-01

    The Center for Nanoscale Science and Engineering (CeNSE) at the University of Kentucky is a multidisciplinary group of faculty, students, and staff, with a shared vision and cutting-edge research facilities to study and develop materials and devices at the nanoscale. Current research projects at CeNSE span a number of diverse nanoscience thrusts in bio- engineering and medicine (nanosensors and nanoelectrodes, nanoparticle-based drug delivery), electronics (nanolithography, molecular electronics, nanotube FETs), nanotemplates for electronics and gas sensors (functionalization of carbon nanotubes, aligned carbon nanotube structures for gate-keeping, e-beam lithography with nanoscale precision), and nano--optoelectronics (nanoscale photonics for laser communications, quantum confinement in photovoltaic devices, and nanostructured displays). This paper provides glimpses of this research and future directions.

  17. Performance analysis of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor

    NASA Astrophysics Data System (ADS)

    Ahish, S.; Sharma, Dheeraj; Vasantha, M. H.; Kumar, Y. B. N.

    2017-03-01

    In this paper, analog/RF performance of InGaAs/GaAsP heterojunction double gate tunnel field effect transistor (HJTFET) has been explored. A highly doped n+ layer is placed at the Source-Channel junction in order to improve the horizontal electric field component and thus, improve the realiability of the device. The analog performance of the device is analysed by extracting current-voltage characteristics, transcondutance (gm), gate-to-drain capacitance (Cgd) and gate-to-source capacitance (Cgs). Further, RF performance of the device is evaluated by obtaining cut-off frequency (fT) and Gain Bandwidth (GBW) product. ION /IOFF ratio equal to ≈ 109, subthreshold slope of 27 mV/dec, maximum fT of 2.1 THz and maximum GBW of 484 GHz were achieved. Also, the impact of temperature variation on the linearity performance of the device has been investigated. Furthermore, the circuit level performance of the device is performed by implementing a Common Source (CS) amplifier; maximum gain of 31.11 dB and 3-dB cut-off frequency equal to 91.2 GHz were achieved for load resistance (RL) = 17.5 KΩ.

  18. Single attosecond pulse generation by using plasmon-driven double optical gating technology in crossed metal nanostructures

    NASA Astrophysics Data System (ADS)

    Feng, Liqiang; Liu, Katheryn

    2018-05-01

    An effective method to obtain the single attosecond pulses (SAPs) by using the multi-cycle plasmon-driven double optical gating (DOG) technology in the specifically designed metal nanostructures has been proposed and investigated. It is found that with the introduction of the crossed metal nanostructures along the driven and the gating polarization directions, not only the harmonic cutoff can be extended, but also the efficient high-order harmonic generation (HHG) at the very highest orders occurs only at one side of the region inside the nanostructure. As a result, a 93 eV supercontinuum with the near stable phase can be found. Further, by properly introducing an ultraviolet (UV) pulse into the driven laser polarization direction (which is defined as the DOG), the harmonic yield can be enhanced by two orders of magnitude in comparison with the singe polarization gating (PG) technology. However, as the polarized angle or the ellipticity of the UV pulse increase, the enhancement of the harmonic yield is slightly reduced. Finally, by superposing the selected harmonics from the DOG scheme, a 30 as SAP with intensity enhancement of two orders of magnitude can be obtained.

  19. Double-edged effect of electric field on the mechanical property of water-filled carbon nanotubes with an application to nanoscale trigger.

    PubMed

    Ye, Hongfei; Zheng, Yonggang; Zhou, Lili; Zhao, Junfei; Zhang, Hong Wu; Chen, Zhen

    2017-11-08

    Polar water molecules would exhibit extraordinary phenomena under nanoscale confinement. By means of electric field, the water-filled carbon nanotube (CNT) that has been successfully fabricated in laboratory is expected to make distinct responses to the external electricity. Here, we examine the effect of electric field direction on the mechanical property of water-filled CNTs. It is found that the longitudinal electric field enhances but the transversal electric field reduces the elastic modulus and critical buckling stress of water-filled CNTs. The double-edged effect of electric field is attributed to the competition between the axial and circumferential pressures induced by polar water molecules. Furthermore, it is notable that the transversal electric field could result in an internal pressure with elliptical distribution, which is an effective and convenient approach to apply the nonuniform pressure on nanochannels. Based on a pre-strained water-filled CNTs, we design a nanoscale trigger with the evident and rapid height change started through switching the direction of electric field. The reported finding lays a foundation for the electricity-controlled property of nanochannels filled with polar molecules and provides an insight into the design of nanoscale functional devices. © 2017 IOP Publishing Ltd.

  20. Strain and deformations engineered germanene bilayer double gate-field effect transistor by first principles

    NASA Astrophysics Data System (ADS)

    Meher Abhinav, E.; Chandrasekaran, Gopalakrishnan; Kasmir Raja, S. V.

    2017-10-01

    Germanene, silicene, stanene, phosphorene and graphene are some of single atomic materials with novel properties. In this paper, we explored bilayer germanene-based Double Gate-Field Effect Transistor (DG-FET) with various strains and deformations using Density Functional Theory (DFT) and Green's approach by first-principle calculations. The DG-FET of 1.6 nm width, 6 nm channel length (Lch) and HfO2 as gate dielectric has been modeled. For intrinsic deformation of germanene bilayer, we have enforced minute mechanical deformation of wrap and twist (5°) and ripple (0.5 Å) on germanene bilayer channel material. By using NEGF formalism, I-V Characteristics of various strains and deformation tailored DG-FET was calculated. Our results show that rough edge and single vacancy (5-9) in bilayer germanene diminishes the current around 47% and 58% respectively as compared with pristine bilayer germanene. In case of strain tailored bilayer DG-FET, multiple NDR regions were observed which can be utilized in building stable multiple logic states in digital circuits and high frequency oscillators using negative resistive techniques.

  1. Enhancing analog performance and suppression of subthreshold swing using hetero-junctionless double gate TFETs

    NASA Astrophysics Data System (ADS)

    Chauhan, Sudakar Singh; Sharma, Neha

    2017-12-01

    This paper proposes hetero-junctionless double gate tunnel field effect transistor (HJLDG-TFETs) for suppression of subthreshold swing (SS) using an InAs compound semiconductor material. The proposed device with high dielectric material, gives an excellent performance when InAs uses at source side. Because of low band gap of 0.36 eV , it reduces the potential barrier height of source channel interface causing higher band to band tunneling. Whereas, Si at the drain side with higher band gap of 1.12 eV , increasing the barrier height of drain channel interface causing lower quantum tunneling. As a result, the proposed device with high-k (HfO2) at 30 nm channel section provides a tremendous characteristics with high ION /IOFF ratio of 2 ×1011 , a point SS of 43.30 mV / decade and moderate SS of 56.75 mV / decade . All the above results show that the proposed device is assured for a low power switching application. The variation in gate supply voltage also analyzed for transconductance property of the device.

  2. Advanced analytical modeling of double-gate Tunnel-FETs - A performance evaluation

    NASA Astrophysics Data System (ADS)

    Graef, Michael; Hosenfeld, Fabian; Horst, Fabian; Farokhnejad, Atieh; Hain, Franziska; Iñíguez, Benjamín; Kloes, Alexander

    2018-03-01

    The Tunnel-FET is one of the most promising devices to be the successor of the standard MOSFET due to its alternative current transport mechanism, which allows a smaller subthreshold slope than the physically limited 60 mV/dec of the MOSFET. Recently fabricated devices show smaller slopes already but mostly not over multiple decades of the current transfer characteristics. In this paper the performance limiting effects, occurring during the fabrication process of the device, such as doping profiles and midgap traps are analyzed by physics-based analytical models and their performance limiting abilities are determined. Additionally, performance enhancing possibilities, such as hetero-structures and ambipolarity improvements are introduced and discussed. An extensive double-gate n-Tunnel-FET model is presented, which meets the versatile device requirements and shows a good fit with TCAD simulations and measurement data.

  3. Improved Performance of h-BN Encapsulated Double Gate Graphene Nanomesh Field Effect Transistor for Short Channel Length

    NASA Astrophysics Data System (ADS)

    Tiwari, Durgesh Laxman; Sivasankaran, K.

    This paper presents improved performance of Double Gate Graphene Nanomesh Field Effect Transistor (DG-GNMFET) with h-BN as substrate and gate oxide material. The DC characteristics of 0.95μm and 5nm channel length devices are studied for SiO2 and h-BN substrate and oxide material. For analyzing the ballistic behavior of electron for 5nm channel length, von Neumann boundary condition is considered near source and drain contact region. The simulated results show improved saturation current for h-BN encapsulated structure with two times higher on current value (0.375 for SiO2 and 0.621 for h-BN) as compared to SiO2 encapsulated structure. The obtained result shows h-BN to be a better substrate and oxide material for graphene electronics with improved device characteristics.

  4. Low-power logic computing realized in a single electric-double-layer MoS2 transistor gated with polymer electrolyte

    NASA Astrophysics Data System (ADS)

    Guo, Junjie; Xie, Dingdong; Yang, Bingchu; Jiang, Jie

    2018-06-01

    Due to its mechanical flexibility, large bandgap and carrier mobility, atomically thin molybdenum disulphide (MoS2) has attracted widespread attention. However, it still lacks a facile route to fabricate a low-power high-performance logic gates/circuits before it gets the real application. Herein, we reported a facile and environment-friendly method to establish the low-power logic function in a single MoS2 field-effect transistor (FET) configuration gated with a polymer electrolyte. Such low-power and high-performance MoS2 FET can be implemented by using water-soluble polyvinyl alcohol (PVA) polymer as proton-conducting electric-double-layer (EDL) dielectric layer. It exhibited an ultra-low voltage (1.5 V) and a good performance with a high current on/off ratio (Ion/off) of 1 × 105, a large electron mobility (μ) of 47.5 cm2/V s, and a small subthreshold swing (S) of 0.26 V/dec, respectively. The inverter can be realized by using such a single MoS2 EDL FET with a gain of ∼4 at the operation voltage of only ∼1 V. Most importantly, the neuronal AND logic computing can be also demonstrated by using such a double-lateral-gate single MoS2 EDL transistor. These results show an effective step for future applications of 2D MoS2 FETs for integrated electronic engineering and low-energy environment-friendly green electronics.

  5. Polarity control in WSe2 double-gate transistors

    NASA Astrophysics Data System (ADS)

    Resta, Giovanni V.; Sutar, Surajit; Balaji, Yashwanth; Lin, Dennis; Raghavan, Praveen; Radu, Iuliana; Catthoor, Francky; Thean, Aaron; Gaillardon, Pierre-Emmanuel; de Micheli, Giovanni

    2016-07-01

    As scaling of conventional silicon-based electronics is reaching its ultimate limit, considerable effort has been devoted to find new materials and new device concepts that could ultimately outperform standard silicon transistors. In this perspective two-dimensional transition metal dichalcogenides, such as MoS2 and WSe2, have recently attracted considerable interest thanks to their electrical properties. Here, we report the first experimental demonstration of a doping-free, polarity-controllable device fabricated on few-layer WSe2. We show how modulation of the Schottky barriers at drain and source by a separate gate, named program gate, can enable the selection of the carriers injected in the channel, and achieved controllable polarity behaviour with ON/OFF current ratios >106 for both electrons and holes conduction. Polarity-controlled WSe2 transistors enable the design of compact logic gates, leading to higher computational densities in 2D-flatronics.

  6. Super-resolution depth information from a short-wave infrared laser gated-viewing system by using correlated double sampling

    NASA Astrophysics Data System (ADS)

    Göhler, Benjamin; Lutzmann, Peter

    2017-10-01

    Primarily, a laser gated-viewing (GV) system provides range-gated 2D images without any range resolution within the range gate. By combining two GV images with slightly different gate positions, 3D information within a part of the range gate can be obtained. The depth resolution is higher (super-resolution) than the minimal gate shift step size in a tomographic sequence of the scene. For a state-of-the-art system with a typical frame rate of 20 Hz, the time difference between the two required GV images is 50 ms which may be too long in a dynamic scenario with moving objects. Therefore, we have applied this approach to the reset and signal level images of a new short-wave infrared (SWIR) GV camera whose read-out integrated circuit supports correlated double sampling (CDS) actually intended for the reduction of kTC noise (reset noise). These images are extracted from only one single laser pulse with a marginal time difference in between. The SWIR GV camera consists of 640 x 512 avalanche photodiodes based on mercury cadmium telluride with a pixel pitch of 15 μm. A Q-switched, flash lamp pumped solid-state laser with 1.57 μm wavelength (OPO), 52 mJ pulse energy after beam shaping, 7 ns pulse length and 20 Hz pulse repetition frequency is used for flash illumination. In this paper, the experimental set-up is described and the operating principle of CDS is explained. The method of deriving super-resolution depth information from a GV system by using CDS is introduced and optimized. Further, the range accuracy is estimated from measured image data.

  7. Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

    DOE PAGES

    Park, J.; Ahn, Y.; Tilka, J. A.; ...

    2016-06-20

    Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Furthermore, electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.

  8. Extraction of mobility and Degradation coefficients in double gate junctionless transistors

    NASA Astrophysics Data System (ADS)

    Bhuvaneshwari, Y. V.; Kranti, Abhinav

    2017-12-01

    In this work, we use the modified McLarty function to understand and extract accumulation (μ acc) and bulk (μ bulk) mobility in Double Gate (DG) Junctionless (JL) MOSFETs over a wide range of doping concentration (N d) and temperature range (250 K to 520 K). The approach enables the estimation of mobility and its attenuation factors (θ 1 and θ 2) by a single method. The extracted results indicate that μ acc can reach higher values than μ bulk due to the screening effect. Results also show that θ 2 extracted in the accumulation regime of JL transistors exhibit relatively low values in comparison to inversion and accumulation mode devices. It is shown that the attenuation factor (θ 1) in JL devices designed with higher N d (≥1019 cm-3) is mainly affected by series resistance (R sd) whereas, in inversion mode (IM) and Accumulation mode (AM) devices, θ 1 factor is governed by both the intrinsic mobility reduction factor (θ 10) and R sd. Additionally, the impact of variation in oxide thickness (T ox), gate length (L g), N d and temperature on θ 1 and θ 2 has been investigated for JL transistor. The weak dependence of μ bulk and μ acc on temperature shows the prevalence of coulomb scattering over phonon scattering for heavily doped JL transistors. The work provides insights into different modes of operation, extraction of mobility and attenuation factors which will be useful for the development of compact models for JL transistors.

  9. Anomalous electrical conductivity of nanoscale colloidal suspensions.

    PubMed

    Chakraborty, Suman; Padhy, Sourav

    2008-10-28

    The electrical conductivity of colloidal suspensions containing nanoscale conducting particles is nontrivially related to the particle volume fraction and the electrical double layer thickness. Classical electrochemical models, however, tend to grossly overpredict the pertinent effective electrical conductivity values, as compared to those obtained under experimental conditions. We attempt to address this discrepancy by appealing to the complex interconnection between the aggregation kinetics of the nanoscale particles and the electrodynamics within the double layer. In particular, we model the consequent alterations in the effective electrophoretic mobility values of the suspension by addressing the fundamentals of agglomeration-deagglomeration mechanisms through the pertinent variations in the effective particulate dimensions, solid fractions, as well as the equivalent suspension viscosity. The consequent alterations in the electrical conductivity values provide a substantially improved prediction of the corresponding experimental findings and explain the apparent anomalous behavior predicted by the classical theoretical postulates.

  10. Improved performance of nanoscale junctionless tunnel field-effect transistor based on gate engineering approach

    NASA Astrophysics Data System (ADS)

    Molaei Imen Abadi, Rouzbeh; Sedigh Ziabari, Seyed Ali

    2016-11-01

    In this paper, a first qualitative study on the performance characteristics of dual-work function gate junctionless TFET (DWG-JLTFET) on the basis of energy band profile modulation is investigated. A dual-work function gate technique is used in a JLTFET in order to create a downward band bending on the source side similar to PNPN structure. Compared with the single-work function gate junctionless TFET (SWG-JLTFET), the numerical simulation results demonstrated that the DWG-JLTFET simultaneously optimizes the ON-state current, the OFF-state leakage current, and the threshold voltage and also improves average subthreshold slope. It is illustrated that if appropriate work functions are selected for the gate materials on the source side and the drain side, the JLTFET exhibits a considerably improved performance. Furthermore, the optimization design of the tunnel gate length ( L Tun) for the proposed DWG-JLTFET is studied. All the simulations are done in Silvaco TCAD for a channel length of 20 nm using the nonlocal band-to-band tunneling (BTBT) model.

  11. Quantum ballistic analysis of transition metal dichalcogenides based double gate junctionless field effect transistor and its application in nano-biosensor

    NASA Astrophysics Data System (ADS)

    Shadman, Abir; Rahman, Ehsanur; Khosru, Quazi D. M.

    2017-11-01

    To reduce the thermal budget and the short channel effects in state of the art CMOS technology, Junctionless field effect transistor (JLFET) has been proposed in the literature. Numerous experimental, modeling, and simulation based works have been done on this new FET with bulk materials for various geometries until now. On the other hand, the two-dimensional layered material is considered as an alternative to current Si technology because of its ultra-thin body and high mobility. Very recently few simulation based works have been done on monolayer molybdenum disulfide based JLFET mainly to show the advantage of JLFET over conventional FET. However, no comprehensive simulation-based work has been done for double gate JLFET keeping in mind the prominent transition metal dichalcogenides (TMDC) to the authors' best knowledge. In this work, we have studied quantum ballistic drain current-gate voltage characteristics of such FETs within non-equilibrium Green's function (NEGF) framework. Our simulation results reveal that all these TMDC materials are viable options for implementing state of the art Junctionless MOSFET with emphasis on their performance at short gate lengths. Besides evaluating the prospect of TMDC materials in the digital logic application, the performance of Junctionless Double Gate trilayer TMDC heterostructure FET for the label-free electrical detection of biomolecules in dry environment has been investigated for the first time to the authors' best knowledge. The impact of charge neutral biomolecules on the electrical characteristics of the biosensor has been analyzed under dry environment situation. Our study shows that these materials could provide high sensitivity in the sub-threshold region as a channel material in nano-biosensor, a trend demonstrated by silicon on insulator FET sensor in the literature. Thus, going by the trend of replacing silicon with these novel materials in device level, TMDC heterostructure could be a viable alternative to

  12. Side-gate modulation effects on high-quality BN-Graphene-BN nanoribbon capacitors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wang, Yang; Chen, Xiaolong; Ye, Weiguang

    High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene have been experimentally realized. The double side-gates can effectively modulate the electronic properties of graphene nanoribbon capacitors. By applying anti-symmetric side-gate voltages, we observed significant upward shifting and flattening of the V-shaped capacitance curve near the charge neutrality point. Symmetric side-gate voltages, however, only resulted in tilted upward shifting along the opposite direction of applied gate voltages. These modulation effects followed the behavior of graphene nanoribbons predicted theoretically for metallic side-gate modulation. The negative quantum capacitance phenomenon predicted by numerical simulations for graphene nanoribbons modulated by graphene side-gates was not observed,more » possibly due to the weakened interactions between the graphene nanoribbon and side-gate electrodes caused by the Ga{sup +} beam etching process.« less

  13. A double tyrosine motif in the cardiac sodium channel domain III-IV linker couples calcium-dependent calmodulin binding to inactivation gating.

    PubMed

    Sarhan, Maen F; Van Petegem, Filip; Ahern, Christopher A

    2009-11-27

    Voltage-gated sodium channels maintain the electrical cadence and stability of neurons and muscle cells by selectively controlling the transmembrane passage of their namesake ion. The degree to which these channels contribute to cellular excitability can be managed therapeutically or fine-tuned by endogenous ligands. Intracellular calcium, for instance, modulates sodium channel inactivation, the process by which sodium conductance is negatively regulated. We explored the molecular basis for this effect by investigating the interaction between the ubiquitous calcium binding protein calmodulin (CaM) and the putative sodium channel inactivation gate composed of the cytosolic linker between homologous channel domains III and IV (DIII-IV). Experiments using isothermal titration calorimetry show that CaM binds to a novel double tyrosine motif in the center of the DIII-IV linker in a calcium-dependent manner, N-terminal to a region previously reported to be a CaM binding site. An alanine scan of aromatic residues in recombinant DIII-DIV linker peptides shows that whereas multiple side chains contribute to CaM binding, two tyrosines (Tyr(1494) and Tyr(1495)) play a crucial role in binding the CaM C-lobe. The functional relevance of these observations was then ascertained through electrophysiological measurement of sodium channel inactivation gating in the presence and absence of calcium. Experiments on patch-clamped transfected tsA201 cells show that only the Y1494A mutation of the five sites tested renders sodium channel steady-state inactivation insensitive to cytosolic calcium. The results demonstrate that calcium-dependent calmodulin binding to the sodium channel inactivation gate double tyrosine motif is required for calcium regulation of the cardiac sodium channel.

  14. Analytical study of nano-scale logical operations

    NASA Astrophysics Data System (ADS)

    Patra, Moumita; Maiti, Santanu K.

    2018-07-01

    A complete analytical prescription is given to perform three basic (OR, AND, NOT) and two universal (NAND, NOR) logic gates at nano-scale level using simple tailor made geometries. Two different geometries, ring-like and chain-like, are taken into account where in each case the bridging conductor is coupled to a local atomic site through a dangling bond whose site energy can be controlled by means of external gate electrode. The main idea is that when injecting electron energy matches with site energy of local atomic site transmission probability drops exactly to zero, whereas the junction exhibits finite transmission for other energies. Utilizing this prescription we perform logical operations, and, we strongly believe that the proposed results can be verified in laboratory. Finally, we numerically compute two-terminal transmission probability considering general models and the numerical results match exactly well with our analytical findings.

  15. Carbon Nanotube Self-Gating Diode and Application in Integrated Circuits.

    PubMed

    Si, Jia; Liu, Lijun; Wang, Fanglin; Zhang, Zhiyong; Peng, Lian-Mao

    2016-07-26

    A nano self-gating diode (SGD) based on nanoscale semiconducting material is proposed, simulated, and realized on semiconducting carbon nanotubes (CNTs) through a doping-free fabrication process. The relationships between the performance and material/structural parameters of the SGD are explored through numerical simulation and verified by experiment results. Based on these results, performance optimization strategy is outlined, and high performance CNT SGDs are fabricated and demonstrated to surpass other published CNT diodes. In particular the CNT SGD exhibits high rectifier factor of up to 1.4 × 10(6) while retains large on-state current. Benefiting from high yield and stability, CNT SGDs are used for constructing logic and analog integrated circuits. Two kinds of basic digital gates (AND and OR) have been realized on chip through using CNT SGDs and on-chip Ti wire resistances, and a full wave rectifier circuit has been demonstrated through using two CNT SGDs. Although demonstrated here using CNT SGDs, this device structure may in principle be implemented using other semiconducting nanomaterials, to provide ideas and building blocks for electronic applications based on nanoscale materials.

  16. Silicon-gate CMOS/SOS processing

    NASA Technical Reports Server (NTRS)

    Ramondetta, P.

    1979-01-01

    Major silicon-gate CMOS/SOS processes are described. Sapphire substrate preparation is also discussed, as well as the following process variations: (1) the double epi process; and (2) ion implantation.

  17. Abstract probabilistic CNOT gate model based on double encoding: study of the errors and physical realizability

    NASA Astrophysics Data System (ADS)

    Gueddana, Amor; Attia, Moez; Chatta, Rihab

    2015-03-01

    In this work, we study the error sources standing behind the non-perfect linear optical quantum components composing a non-deterministic quantum CNOT gate model, which performs the CNOT function with a success probability of 4/27 and uses a double encoding technique to represent photonic qubits at the control and the target. We generalize this model to an abstract probabilistic CNOT version and determine the realizability limits depending on a realistic range of the errors. Finally, we discuss physical constraints allowing the implementation of the Asymmetric Partially Polarizing Beam Splitter (APPBS), which is at the heart of correctly realizing the CNOT function.

  18. Electrical Double Layer Capacitance in a Graphene-embedded Al2O3 Gate Dielectric

    PubMed Central

    Ki Min, Bok; Kim, Seong K.; Jun Kim, Seong; Ho Kim, Sung; Kang, Min-A; Park, Chong-Yun; Song, Wooseok; Myung, Sung; Lim, Jongsun; An, Ki-Seok

    2015-01-01

    Graphene heterostructures are of considerable interest as a new class of electronic devices with exceptional performance in a broad range of applications has been realized. Here, we propose a graphene-embedded Al2O3 gate dielectric with a relatively high dielectric constant of 15.5, which is about 2 times that of Al2O3, having a low leakage current with insertion of tri-layer graphene. In this system, the enhanced capacitance of the hybrid structure can be understood by the formation of a space charge layer at the graphene/Al2O3 interface. The electrical properties of the interface can be further explained by the electrical double layer (EDL) model dominated by the diffuse layer. PMID:26530817

  19. Temperature dependency of double material gate oxide (DMGO) symmetric dual-k spacer (SDS) wavy FinFET

    NASA Astrophysics Data System (ADS)

    Pradhan, K. P.; Priyanka; Sahu, P. K.

    2016-01-01

    Symmetric Dual-k Spacer (SDS) Trigate Wavy FinFET is a novel hybrid device that combines three significant and advanced technologies i.e., ultra-thin-body (UTB), FinFET, and symmetric spacer engineering on a single silicon on insulator (SOI) platform. This innovative architecture promises to enhance the device performance as compared to conventional FinFET without increasing the chip area. For the first time, we have incorporated two different dielectric materials (SiO2, and HfO2) as gate oxide to analyze the effect on various performance metrics of SDS wavy FinFET. This work evaluates the response of double material gate oxide (DMGO) on parameters like mobility, on current (Ion), transconductance (gm), transconductance generation factor (TGF), total gate capacitance (Cgg), and cutoff frequency (fT) in SDS wavy FinFET. This work also reveals the presence of biasing point i.e., zero temperature coefficient (ZTC) bias point. The ZTC bias point is that point where the device parameters become independent of temperature. The impact of operating temperature (T) on above said various performances are also subjected to extensive analysis. This further validates the reliability of DMGO-SDS FinFET and its application opportunities involved in modeling analog/RF circuits for a broad range of temperature applications. From extensive 3-D device simulation, we have determined that the inclusion of DMGO in SDS wavy FinFET is superior in performance.

  20. Effects of drain bias on the statistical variation of double-gate tunnel field-effect transistors

    NASA Astrophysics Data System (ADS)

    Choi, Woo Young

    2017-04-01

    The effects of drain bias on the statistical variation of double-gate (DG) tunnel field-effect transistors (TFETs) are discussed in comparison with DG metal-oxide-semiconductor FETs (MOSFETs). Statistical variation corresponds to the variation of threshold voltage (V th), subthreshold swing (SS), and drain-induced barrier thinning (DIBT). The unique statistical variation characteristics of DG TFETs and DG MOSFETs with the variation of drain bias are analyzed by using full three-dimensional technology computer-aided design (TCAD) simulation in terms of the three dominant variation sources: line-edge roughness (LER), random dopant fluctuation (RDF) and workfunction variation (WFV). It is observed than DG TFETs suffer from less severe statistical variation as drain voltage increases unlike DG MOSFETs.

  1. Nonvolatile gate effect in a ferroelectric-semiconductor quantum well.

    PubMed

    Stolichnov, Igor; Colla, Enrico; Setter, Nava; Wojciechowski, Tomasz; Janik, Elzbieta; Karczewski, Grzegorz

    2006-12-15

    Field effect transistors with ferroelectric gates would make ideal rewritable nonvolatile memories were it not for the severe problems in integrating the ferroelectric oxide directly on the semiconductor channel. We propose a powerful way to avoid these problems using a gate material that is ferroelectric and semiconducting simultaneously. First, ferroelectricity in semiconductor (Cd,Zn)Te films is proven and studied using modified piezoforce scanning probe microscopy. Then, a rewritable field effect device is demonstrated by local poling of the (Cd,Zn)Te layer of a (Cd,Zn)Te/CdTe quantum well, provoking a reversible, nonvolatile change in the resistance of the 2D electron gas. The results point to a potential new family of nanoscale one-transistor memories.

  2. Compact universal logic gates realized using quantization of current in nanodevices.

    PubMed

    Zhang, Wancheng; Wu, Nan-Jian; Yang, Fuhua

    2007-12-12

    This paper proposes novel universal logic gates using the current quantization characteristics of nanodevices. In nanodevices like the electron waveguide (EW) and single-electron (SE) turnstile, the channel current is a staircase quantized function of its control voltage. We use this unique characteristic to compactly realize Boolean functions. First we present the concept of the periodic-threshold threshold logic gate (PTTG), and we build a compact PTTG using EW and SE turnstiles. We show that an arbitrary three-input Boolean function can be realized with a single PTTG, and an arbitrary four-input Boolean function can be realized by using two PTTGs. We then use one PTTG to build a universal programmable two-input logic gate which can be used to realize all two-input Boolean functions. We also build a programmable three-input logic gate by using one PTTG. Compared with linear threshold logic gates, with the PTTG one can build digital circuits more compactly. The proposed PTTGs are promising for future smart nanoscale digital system use.

  3. Quantitative measurements of nanoscale permittivity and conductivity using tuning-fork-based microwave impedance microscopy

    NASA Astrophysics Data System (ADS)

    Wu, Xiaoyu; Hao, Zhenqi; Wu, Di; Zheng, Lu; Jiang, Zhanzhi; Ganesan, Vishal; Wang, Yayu; Lai, Keji

    2018-04-01

    We report quantitative measurements of nanoscale permittivity and conductivity using tuning-fork (TF) based microwave impedance microscopy (MIM). The system is operated under the driving amplitude modulation mode, which ensures satisfactory feedback stability on samples with rough surfaces. The demodulated MIM signals on a series of bulk dielectrics are in good agreement with results simulated by finite-element analysis. Using the TF-MIM, we have visualized the evolution of nanoscale conductance on back-gated MoS2 field effect transistors, and the results are consistent with the transport data. Our work suggests that quantitative analysis of mesoscopic electrical properties can be achieved by near-field microwave imaging with small distance modulation.

  4. Bio-fabrication of nanomesh channels of single-walled carbon nanotubes for locally gated field-effect transistors

    NASA Astrophysics Data System (ADS)

    Byeon, Hye-Hyeon; Lee, Woo Chul; Kim, Wonbin; Kim, Seong Keun; Kim, Woong; Yi, Hyunjung

    2017-01-01

    Single-walled carbon nanotubes (SWNTs) are one of the promising electronic components for nanoscale electronic devices such as field-effect transistors (FETs) owing to their excellent device characteristics such as high conductivity, high carrier mobility and mechanical flexibility. Localized gating gemometry of FETs enables individual addressing of active channels and allows for better electrostatics via thinner dielectric layer of high k-value. For localized gating of SWNTs, it becomes critical to define SWNTs of controlled nanostructures and functionality onto desired locations in high precision. Here, we demonstrate that a biologically templated approach in combination of microfabrication processes can successfully produce a nanostructured channels of SWNTs for localized active devices such as local bottom-gated FETs. A large-scale nanostructured network, nanomesh, of SWNTs were assembled in solution using an M13 phage with strong binding affinity toward SWNTs and micrometer-scale nanomesh channels were defined using negative photolithography and plasma-etching processes. The bio-fabrication approach produced local bottom-gated FETs with remarkably controllable nanostructures and successfully enabled semiconducting behavior out of unsorted SWNTs. In addition, the localized gating scheme enhanced the device performances such as operation voltage and I on/I off ratio. We believe that our approach provides a useful and integrative method for fabricating electronic devices out of nanoscale electronic materials for applications in which tunable electrical properties, mechanical flexibility, ambient stability, and chemical stability are of crucial importance.

  5. Exploring the Short-Channel Characteristics of Asymmetric Junctionless Double-Gate Silicon-on-Nothing MOSFET

    NASA Astrophysics Data System (ADS)

    Saha, Priyanka; Banerjee, Pritha; Dash, Dinesh Kumar; Sarkar, Subir Kumar

    2018-03-01

    This paper presents an analytical model of an asymmetric junctionless double-gate (asymmetric DGJL) silicon-on-nothing metal-oxide-semiconductor field-effect transistor (MOSFET). Solving the 2-D Poisson's equation, the expressions for center potential and threshold voltage are calculated. In addition, the response of the device toward the various short-channel effects like hot carrier effect, drain-induced barrier lowering and threshold voltage roll-off has also been examined along with subthreshold swing and drain current characteristics. Performance analysis of the present model is also demonstrated by comparing its short-channel behavior with conventional DGJL MOSFET. The effect of variation of the device features due to the variation of device parameters is also studied. The simulated results obtained using 2D device simulator, namely ATLAS, are in good agreement with the analytical results, hence validating our derived model.

  6. Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

    NASA Astrophysics Data System (ADS)

    Ullah, A. R.; Carrad, D. J.; Krogstrup, P.; Nygârd, J.; Micolich, A. P.

    2018-02-01

    Doping is a common route to reducing nanowire transistor on-resistance but it has limits. A high doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of subthreshold swing and contact resistance that surpasses the best existing p -type nanowire metal-oxide semiconductor field-effect transistors (MOSFETs). Our subthreshold swing of 75 mV/dec is within 25 % of the room-temperature thermal limit and comparable with n -InP and n -GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.

  7. Quantitative measurements of nanoscale permittivity and conductivity using tuning-fork-based microwave impedance microscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wu, Xiaoyu; Hao, Zhenqi; Wu, Di

    Here, we report quantitative measurements of nanoscale permittivity and conductivity using tuning-fork (TF) based microwave impedance microscopy (MIM). The system is operated under the driving amplitude modulation mode, which ensures satisfactory feedback stability on samples with rough surfaces. The demodulated MIM signals on a series of bulk dielectrics are in good agreement with results simulated by finite-element analysis. Using the TF-MIM, we have visualized the evolution of nanoscale conductance on back-gated MoS 2 field effect transistors, and the results are consistent with the transport data. Our work suggests that quantitative analysis of mesoscopic electrical properties can be achieved by near-fieldmore » microwave imaging with small distance modulation.« less

  8. Quantitative measurements of nanoscale permittivity and conductivity using tuning-fork-based microwave impedance microscopy

    DOE PAGES

    Wu, Xiaoyu; Hao, Zhenqi; Wu, Di; ...

    2018-04-01

    Here, we report quantitative measurements of nanoscale permittivity and conductivity using tuning-fork (TF) based microwave impedance microscopy (MIM). The system is operated under the driving amplitude modulation mode, which ensures satisfactory feedback stability on samples with rough surfaces. The demodulated MIM signals on a series of bulk dielectrics are in good agreement with results simulated by finite-element analysis. Using the TF-MIM, we have visualized the evolution of nanoscale conductance on back-gated MoS 2 field effect transistors, and the results are consistent with the transport data. Our work suggests that quantitative analysis of mesoscopic electrical properties can be achieved by near-fieldmore » microwave imaging with small distance modulation.« less

  9. Capacitorless one-transistor dynamic random-access memory based on asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor with n-doped boosting layer and drain-underlap structure

    NASA Astrophysics Data System (ADS)

    Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

    2018-04-01

    In this work, we present a capacitorless one-transistor dynamic random-access memory (1T-DRAM) based on an asymmetric double-gate Ge/GaAs-heterojunction tunneling field-effect transistor (TFET) for DRAM applications. The n-doped boosting layer and gate2 drain-underlap structure is employed in the device to obtain an excellent 1T-DRAM performance. The n-doped layer inserted between the source and channel regions improves the sensing margin because of a high rate of increase in the band-to-band tunneling (BTBT) probability. Furthermore, because the gate2 drain-underlap structure reduces the recombination rate that occurs between the gate2 and drain regions, a device with a gate2 drain-underlap length (L G2_D-underlap) of 10 nm exhibited a longer retention performance. As a result, by applying the n-doped layer and gate2 drain-underlap structure, the proposed device exhibited not only a high sensing margin of 1.11 µA/µm but also a long retention time of greater than 100 ms at a temperature of 358 K (85 °C).

  10. Gate control of spin-polarized conductance in alloyed transitional metal nanocontacts

    NASA Astrophysics Data System (ADS)

    Sivkov, Ilia N.; Brovko, Oleg O.; Rungger, Ivan; Stepanyuk, Valeri S.

    2017-03-01

    To date, endeavors in nanoscale spintronics are dominated by the use of single-electron or single-spin transistors having at their heart a semiconductor, metallic, or molecular quantum dot whose localized states are non-spin-degenerate and can be controlled by an external bias applied via a gate electrode. Adjusting the bias of the gate one can realign those states with respect to the chemical potentials of the leads and thus tailor the spin-polarized transmission properties of the device. Here we show that similar functionality can be achieved in a purely metallic junction comprised of a metallic magnetic chain attached to metallic paramagnetic leads and biased by a gate electrode. Our ab initio calculations of electron transport through mixed Pt-Fe (Fe-Pd and Fe-Rh) atomic chains suspended between Pt (Pd and Rh) electrodes show that spin-polarized confined states of the chain can be shifted by the gate bias causing a change in the relative contributions of majority and minority channels to the nanocontact's conductance. As a result, we observe strong dependence of conductance spin polarization on the applied gate potential. In some cases the spin polarization of conductance can even be reversed in sign upon gate potential application, which is a remarkable and promising trait for spintronic applications.

  11. Method for double-sided processing of thin film transistors

    DOEpatents

    Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

    2008-04-08

    This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

  12. Photon gating in four-dimensional ultrafast electron microscopy.

    PubMed

    Hassan, Mohammed T; Liu, Haihua; Baskin, John Spencer; Zewail, Ahmed H

    2015-10-20

    Ultrafast electron microscopy (UEM) is a pivotal tool for imaging of nanoscale structural dynamics with subparticle resolution on the time scale of atomic motion. Photon-induced near-field electron microscopy (PINEM), a key UEM technique, involves the detection of electrons that have gained energy from a femtosecond optical pulse via photon-electron coupling on nanostructures. PINEM has been applied in various fields of study, from materials science to biological imaging, exploiting the unique spatial, energy, and temporal characteristics of the PINEM electrons gained by interaction with a "single" light pulse. The further potential of photon-gated PINEM electrons in probing ultrafast dynamics of matter and the optical gating of electrons by invoking a "second" optical pulse has previously been proposed and examined theoretically in our group. Here, we experimentally demonstrate this photon-gating technique, and, through diffraction, visualize the phase transition dynamics in vanadium dioxide nanoparticles. With optical gating of PINEM electrons, imaging temporal resolution was improved by a factor of 3 or better, being limited only by the optical pulse widths. This work enables the combination of the high spatial resolution of electron microscopy and the ultrafast temporal response of the optical pulses, which provides a promising approach to attain the resolution of few femtoseconds and attoseconds in UEM.

  13. Photon gating in four-dimensional ultrafast electron microscopy

    PubMed Central

    Hassan, Mohammed T.; Liu, Haihua; Baskin, John Spencer; Zewail, Ahmed H.

    2015-01-01

    Ultrafast electron microscopy (UEM) is a pivotal tool for imaging of nanoscale structural dynamics with subparticle resolution on the time scale of atomic motion. Photon-induced near-field electron microscopy (PINEM), a key UEM technique, involves the detection of electrons that have gained energy from a femtosecond optical pulse via photon–electron coupling on nanostructures. PINEM has been applied in various fields of study, from materials science to biological imaging, exploiting the unique spatial, energy, and temporal characteristics of the PINEM electrons gained by interaction with a “single” light pulse. The further potential of photon-gated PINEM electrons in probing ultrafast dynamics of matter and the optical gating of electrons by invoking a “second” optical pulse has previously been proposed and examined theoretically in our group. Here, we experimentally demonstrate this photon-gating technique, and, through diffraction, visualize the phase transition dynamics in vanadium dioxide nanoparticles. With optical gating of PINEM electrons, imaging temporal resolution was improved by a factor of 3 or better, being limited only by the optical pulse widths. This work enables the combination of the high spatial resolution of electron microscopy and the ultrafast temporal response of the optical pulses, which provides a promising approach to attain the resolution of few femtoseconds and attoseconds in UEM. PMID:26438835

  14. Study of fully-depleted Ge double-gate n-type Tunneling Field-Effect Transistors for improvement in on-state current and sub-threshold swing

    NASA Astrophysics Data System (ADS)

    Liu, Xiangyu; Hu, Huiyong; Wang, Meng; Zhang, Heming; Cui, Shimin; Shu, Bin; Wang, Bin

    2018-01-01

    In this paper, a fully-depleted (FD) Ge double-gate (DG) n-type Tunneling Field-Effect Transistors (TFET) structure is studied in detail by two-dimensional numerical simulation. The simulation results indicated that the on-state current Ion and on-off ratio of the FD Ge DG-TFET increases about 1 order of magnitude comparing with the Conventional Ge DG-TFET, and Ion=3.95×10-5 A/μm and the below 60 mV/decade subthreshold swing S=26.4 mV/decade are achieved with the length of gate LD=20 nm, the workfuntion of metal gate Φm=0.2 eV and the doping concentration of n+-type-channel ND=1×1018 cm-3. Moreover, the impacts of Φm, ND and LD are investigated. The simulation results indicated that the off-state current Ioff includes the tunneling current at the middle of channel IB the gated-induced drain leakage (GIDL) current IGIDL. With optimized Φm and ND, Ioff is reduced about 2 orders of magnitude to 2.5×10-13 A/μm with LD increasing from 40 nm to 100 nm, and on-off ratio is increased to 1.58×107.

  15. Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Che, Yongli; Zhang, Yating, E-mail: yating@tju.edu.cn; Song, Xiaoxian

    2016-07-04

    Using only solution processing methods, we developed ambipolar quantum-dot (QD) transistor floating-gate memory (FGM) that uses Au nanoparticles as a floating gate. Because of the bipolarity of the active channel of PbSe QDs, the memory could easily trap holes or electrons in the floating gate by programming/erasing (P/E) operations, which could shift the threshold voltage both up and down. As a result, the memory exhibited good programmable memory characteristics: a large memory window (ΔV{sub th} ∼ 15 V) and a long retention time (>10{sup 5 }s). The magnitude of ΔV{sub th} depended on both P/E voltages and the bias voltage (V{sub DS}): ΔV{sub th}more » was a cubic function to V{sub P/E} and linearly depended on V{sub DS}. Therefore, this FGM based on a QD transistor is a promising alternative to its inorganic counterparts owing to its advantages of bipolarity, high mobility, low cost, and large-area production.« less

  16. Optimization of pentacene double floating gate memories based on charge injection regulated by SAM functionalization

    NASA Astrophysics Data System (ADS)

    Li, S.; Guérin, D.; Lenfant, S.; Lmimouni, K.

    2018-02-01

    Pentacene based double nano-floating gate memories (NFGM) by using gold nanoparticles (Au NPs) and reduced graphene oxide (rGO) sheets as charge trapping layers are prepared and demonstrated. Particularly, the NFGM chemically treated by 2,3,4,5,6-pentafluorobenzenethiol (PFBT) self-assembled monolayers (SAM) exhibits excellent memory performances, including high mobility of 0.23 cm2V-1s-1, the large memory window of 51 V, and the stable retention property more than 108 s. Comparing the performances of NFGM without treating with PFBT SAM, the improving performances of the memory devices by SAM modification are explained by the increase of charge injection, which could be further investigated by XPS and UPS. In particular, the results highlight the utility of SAM modulations and controlling of charge transport in the development of organic transistor memories.

  17. Rodney Hunt supplies gates to Idaho Power's Swan Falls

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Not Available

    1993-02-01

    Rodney Hunt Co. shipped two 30-foot by 28-foot fabricated steel roller gates to Idaho Power Co.'s Swan Falls Dam Project, where they will be installed as draft tube gates. Rodney Hunt said the gates, each weighing approximately 55 tons, are the largest roller gates the company has manufactured. The company supplied the gates under the terms of a contract worth more than $500,000. The gates were ordered as part of Idaho Power's rehabilitation of Swan Falls Dam, which will double the power plant's capacity to 25 MW. New units will begin producing power in 1993, and the project will bemore » completed in 1994. Elsewhere on the Snake River, Idaho Power intends to increase the capacity of its Twin Falls project to 52 MW from 10 MW. Construction is scheduled to start in June 1993.« less

  18. Comparative influence study of gate-formation structuring on Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Hsu, M. K.; Chiu, S. Y.; Wu, C. H.; Guo, D. F.; Lour, W. S.

    2008-12-01

    Pseudomorphic Al0.22Ga0.78As/In0.16Ga0.84As/Al0.22Ga0.78As double heterojunction high electron mobility transistors (DH-HEMTs) fabricated with different gate-formation structures of a single-recess gate (SRG), a double-recess gate (DRG) and a field-plate gate (FPG) were comparatively investigated. FPG devices show the best breakdown characteristics among these devices due to great reduction in the peak electric field between the drain and gate electrodes. The measured gate-drain breakdown voltages defined at a 1 mA mm-1 reverse gate-drain current density were -15.3, -19.1 and -26.0 V for SRG, DRG and FPG devices, respectively. No significant differences in their room-temperature common-source current-voltage characteristics were observed. However, FPG devices exhibit threshold voltages being the least sensitive to temperature. Threshold voltages as a function of temperature indicate a threshold-voltage variation as low as -0.97 mV K-1 for FPG devices. According to the 2.4 GHz load-pull power measurement at VDS = 3.0 V and VGS = -0.5 V, the saturated output power (POUT), power gain (GP) and maximum power-added efficiency (PAE) were 10.3 dBm/13.2 dB/36.6%, 11.2 dBm/13.1 dB/39.7% and 13.06 dBm/12.8 dB/47.3%, respectively, for SRG, DRG and FPG devices with a pi-gate in class AB operation. When the FPG device is biased at a VDS of 10 V, the saturated power density is more than 600 mW mm-1.

  19. High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nguyen, Binh-Minh, E-mail: mbnguyen@hrl.com, E-mail: MSokolich@hrl.com; Yi, Wei; Noah, Ramsey

    2015-01-19

    We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500 000 cm{sup 2}/Vs at sheet charge density of 8 × 10{sup 11} cm{sup −2} and approaching 100 000 cm{sup 2}/Vs near the charge neutrality point. Lattice matching between the quantum well structure and the substrate eliminates the need for a thick buffer, enabling large back gate capacitance and efficient coupling with the conduction channels in the quantum wells. As a result, quantum Hall effects are observed in both electron and hole regimes across the hybridizationmore » gap.« less

  20. Nanoscale Kerr Nonlinearity Enhancement Using Spontaneously Generated Coherence in Plasmonic Nanocavity

    PubMed Central

    Chen, Hongyi; Ren, Juanjuan; Gu, Ying; Zhao, Dongxing; Zhang, Junxiang; Gong, Qihuang

    2015-01-01

    The enhancement of the optical nonlinear effects at nanoscale is important in the on-chip optical information processing. We theoretically propose the mechanism of the great Kerr nonlinearity enhancement by using anisotropic Purcell factors in a double-Λ type four-level system, i.e., if the bisector of the two vertical dipole moments lies in the small/large Purcell factor axis in the space, the Kerr nonlinearity will be enhanced/decreased due to the spontaneously generated coherence accordingly. Besides, when the two dipole moments are parallel, the extremely large Kerr nonlinearity increase appears, which comes from the double population trapping. Using the custom-designed resonant plasmonic nanostructure which gives an anisotropic Purcell factor environment, we demonstrate the effective nanoscale control of the Kerr nonlinearity. Such controllable Kerr nonlinearity may be realized by the state-of-the-art nanotechnics and it may have potential applications in on-chip photonic nonlinear devices. PMID:26670939

  1. Gating the glutamate gate of CLC-2 chloride channel by pore occupancy

    PubMed Central

    De Jesús-Pérez, José J.; Castro-Chong, Alejandra; Shieh, Ru-Chi; Hernández-Carballo, Carmen Y.; De Santiago-Castillo, José A.

    2016-01-01

    CLC-2 channels are dimeric double-barreled chloride channels that open in response to hyperpolarization. Hyperpolarization activates protopore gates that independently regulate the permeability of the pore in each subunit and the common gate that affects the permeability through both pores. CLC-2 channels lack classic transmembrane voltage–sensing domains; instead, their protopore gates (residing within the pore and each formed by the side chain of a glutamate residue) open under repulsion by permeant intracellular anions or protonation by extracellular H+. Here, we show that voltage-dependent gating of CLC-2: (a) is facilitated when permeant anions (Cl−, Br−, SCN−, and I−) are present in the cytosolic side; (b) happens with poorly permeant anions fluoride, glutamate, gluconate, and methanesulfonate present in the cytosolic side; (c) depends on pore occupancy by permeant and poorly permeant anions; (d) is strongly facilitated by multi-ion occupancy; (e) is absent under likely protonation conditions (pHe = 5.5 or 6.5) in cells dialyzed with acetate (an impermeant anion); and (f) was the same at intracellular pH 7.3 and 4.2; and (g) is observed in both whole-cell and inside-out patches exposed to increasing [Cl−]i under unlikely protonation conditions (pHe = 10). Thus, based on our results we propose that hyperpolarization activates CLC-2 mainly by driving intracellular anions into the channel pores, and that protonation by extracellular H+ plays a minor role in dislodging the glutamate gate. PMID:26666914

  2. Sub-50-as isolated extreme ultraviolet continua generated by 1.6-cycle near-infrared pulse combined with double optical gating scheme

    NASA Astrophysics Data System (ADS)

    Oguri, Katsuya; Mashiko, Hiroki; Ogawa, Tatsuya; Hanada, Yasutaka; Nakano, Hidetoshi; Gotoh, Hideki

    2018-04-01

    We demonstrate the generation of ultrabroad bandwidth attosecond continua extending to sub-50-as duration in the extreme ultraviolet (EUV) region based on a 1.6-cycle Ti:sapphire laser pulse. The combination of the amplitude gating scheme with a sub-two-cycle driver pulse and the double optical gating scheme achieves the continuum generation with a bandwidth of 70 eV at the full width at half maximum near the peak photon energy of 140 eV, which supports a Fourier-transform-limited pulse duration as short as 32 as. The carrier-envelope-phase (CEP) dependence of the attosecond continua shows a single-peak structure originating from the half-cycle cut-off at appropriate CEP values, which strongly indicates the generation of a single burst of an isolated attosecond pulse. Our approach suggests a possibility for isolated sub-50-as pulse generation in the EUV region by compensating for the intrinsic attosecond chirp with a Zr filter.

  3. Gate protective device for SOS array

    NASA Technical Reports Server (NTRS)

    Meyer, J. E., Jr.; Scott, J. H.

    1972-01-01

    Protective gate device consisting of alternating heavily doped n(+) and p(+) diffusions eliminates breakdown voltages in silicon oxide on sapphire arrays caused by electrostatic discharge from person or equipment. Diffusions are easily produced during normal double epitaxial processing. Devices with nine layers had 27-volt breakdown.

  4. High-fidelity gates in quantum dot spin qubits

    PubMed Central

    Koh, Teck Seng; Coppersmith, S. N.; Friesen, Mark

    2013-01-01

    Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet–triplet and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance, and a gate-like process known as stimulated Raman adiabatic passage. These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling g and the detuning ϵ, which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity (f) for fixed g as a function of the other control parameters; this yields an that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound that is specific to the qubit-gate combination. We show that similar gate fidelities should be attainable for singlet-triplet qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields ΔB produced by nuclear spins. PMID:24255105

  5. High-fidelity gates in quantum dot spin qubits.

    PubMed

    Koh, Teck Seng; Coppersmith, S N; Friesen, Mark

    2013-12-03

    Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance, and a gate-like process known as stimulated Raman adiabatic passage. These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling g and the detuning [Symbol: see text], which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity (f) for fixed g as a function of the other control parameters; this yields an f(opt)(g) that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound f(max) that is specific to the qubit-gate combination. We show that similar gate fidelities (~99:5%) should be attainable for singlet-triplet qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields ΔB produced by nuclear spins.

  6. Organic/inorganic hybrid synaptic transistors gated by proton conducting methylcellulose films

    NASA Astrophysics Data System (ADS)

    Wan, Chang Jin; Zhu, Li Qiang; Wan, Xiang; Shi, Yi; Wan, Qing

    2016-01-01

    The idea of building a brain-inspired cognitive system has been around for several decades. Recently, electric-double-layer transistors gated by ion conducting electrolytes were reported as the promising candidates for synaptic electronics and neuromorphic system. In this letter, indium-zinc-oxide transistors gated by proton conducting methylcellulose electrolyte films were experimentally demonstrated with synaptic plasticity including paired-pulse facilitation and spatiotemporal-correlated dynamic logic. More importantly, a model based on proton-related electric-double-layer modulation and stretched-exponential decay function was proposed, and the theoretical results are in good agreement with the experimentally measured synaptic behaviors.

  7. Organic/inorganic hybrid synaptic transistors gated by proton conducting methylcellulose films

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wan, Chang Jin; Wan, Qing, E-mail: wanqing@nju.edu.cn, E-mail: yshi@nju.edu.cn; Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201

    The idea of building a brain-inspired cognitive system has been around for several decades. Recently, electric-double-layer transistors gated by ion conducting electrolytes were reported as the promising candidates for synaptic electronics and neuromorphic system. In this letter, indium-zinc-oxide transistors gated by proton conducting methylcellulose electrolyte films were experimentally demonstrated with synaptic plasticity including paired-pulse facilitation and spatiotemporal-correlated dynamic logic. More importantly, a model based on proton-related electric-double-layer modulation and stretched-exponential decay function was proposed, and the theoretical results are in good agreement with the experimentally measured synaptic behaviors.

  8. Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations

    NASA Astrophysics Data System (ADS)

    Hong, Xia

    2016-03-01

    Combining the nonvolatile, locally switchable polarization field of a ferroelectric thin film with a nanoscale electronic material in a field effect transistor structure offers the opportunity to examine and control a rich variety of mesoscopic phenomena and interface coupling. It is also possible to introduce new phases and functionalities into these hybrid systems through rational design. This paper reviews two rapidly progressing branches in the field of ferroelectric transistors, which employ two distinct classes of nanoscale electronic materials as the conducting channel, the two-dimensional (2D) electron gas graphene and the strongly correlated transition metal oxide thin films. The topics covered include the basic device physics, novel phenomena emerging in the hybrid systems, critical mechanisms that control the magnitude and stability of the field effect modulation and the mobility of the channel material, potential device applications, and the performance limitations of these devices due to the complex interface interactions and challenges in achieving controlled materials properties. Possible future directions for this field are also outlined, including local ferroelectric gate control via nanoscale domain patterning and incorporating other emergent materials in this device concept, such as the simple binary ferroelectrics, layered 2D transition metal dichalcogenides, and the 4d and 5d heavy metal compounds with strong spin-orbit coupling.

  9. Charge transport in nanoscale junctions.

    PubMed

    Albrecht, Tim; Kornyshev, Alexei; Bjørnholm, Thomas

    2008-09-03

    many particle excitations, new surface states in semiconductor electrodes, various mechanisms for single molecule rectification of the current, inelastic electron spectra and SERS spectroscopy. Three terminal architectures allowing (electrochemical) gating and transistor effects. Electrochemical nanojunctions and gating: intermolecular electron transfer in multi-redox metalloproteins, contact force modulation, characteristic current-noise patterns due to conformational fluctuations, resonance effects and electrocatalysis. Novel architectures: linear coupled quantum-dot-bridged junctions, electrochemical redox mediated transfer in two center systems leading to double maxima current-voltage plots and negative differential resistance, molecular-nanoparticle hybrid junctions and unexpected mesoscopic effects in polymeric wires. Device integration: techniques for creating stable metal/molecule/metal junctions using 'nano-alligator clips' and integration with 'traditional' silicon-based technology. The Guest Editors would like to thank all of the authors and referees of this special issue for their meticulous work in making each paper a valuable contribution to this research area, the early-bird authors for their patience, and Journal of Physics: Condensed Matter editorial staff in Bristol for their continuous support.

  10. Electrofluidic gating of a chemically reactive surface.

    PubMed

    Jiang, Zhijun; Stein, Derek

    2010-06-01

    We consider the influence of an electric field applied normal to the electric double layer at a chemically reactive surface. Our goal is to elucidate how surface chemistry affects the potential for field-effect control over micro- and nanofluidic systems, which we call electrofluidic gating. The charging of a metal-oxide-electrolyte (MOE) capacitor is first modeled analytically. We apply the Poisson-Boltzmann description of the double layer and impose chemical equilibrium between the ionizable surface groups and the solution at the solid-liquid interface. The chemically reactive surface is predicted to behave as a buffer, regulating the charge in the double layer by either protonating or deprotonating in response to the applied field. We present the dependence of the charge density and the electrochemical potential of the double layer on the applied field, the density, and the dissociation constants of ionizable surface groups and the ionic strength and the pH of the electrolyte. We simulate the responses of SiO(2) and Al(2)O(3), two widely used oxide insulators with different surface chemistries. We also consider the limits to electrofluidic gating imposed by the nonlinear behavior of the double layer and the dielectric strength of oxide materials, which were measured for SiO(2) and Al(2)O(3) films in MOE configurations. Our results clarify the response of chemically reactive surfaces to applied fields, which is crucial to understanding electrofluidic effects in real devices.

  11. Gates Foundation donates $25 million for AIDS vaccine.

    PubMed

    1999-05-07

    The International AIDS Vaccine Initiative (IAVI) received a $25 million five-year grant from Bill and Melinda Gates through the William H. Gates Foundation. This is the largest gift seen in the AIDS epidemic, and will allow IAVI to more than double vaccine development efforts. IAVI is currently developing two potential vaccines, hopes to study three others, and is working with the business community to insure that a successful vaccine is affordable in developing countries. With 16,000 new infections occurring daily, a vaccine is seen as the most effective way to stop the epidemic. The William H. Gates Foundation had donated $1.5 million to IAVI and $100 million for programs to speed the delivery of vaccines to children in poor countries. Internet addresses are included for both IAVI and the William H. Gates Foundation.

  12. A reconfigurable gate architecture for Si/SiGe quantum dots

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zajac, D. M.; Hazard, T. M.; Mi, X.

    2015-06-01

    We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots, and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35–70 μeV. By energizing two additional gates, we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.

  13. P-channel differential multiple-time programmable memory cells by laterally coupled floating metal gate fin field-effect transistors

    NASA Astrophysics Data System (ADS)

    Wang, Tai-Min; Chien, Wei-Yu; Hsu, Chia-Ling; Lin, Chrong Jung; King, Ya-Chin

    2018-04-01

    In this paper, we present a new differential p-channel multiple-time programmable (MTP) memory cell that is fully compatible with advanced 16 nm CMOS fin field-effect transistors (FinFET) logic processes. This differential MTP cell stores complementary data in floating gates coupled by a slot contact structure, which make different read currents possible on a single cell. In nanoscale CMOS FinFET logic processes, the gate dielectric layer becomes too thin to retain charges inside floating gates for nonvolatile data storage. By using a differential architecture, the sensing window of the cell can be extended and maintained by an advanced blanket boost scheme. The charge retention problem in floating gate cells can be improved by periodic restoring lost charges when significant read window narrowing occurs. In addition to high programming efficiency, this p-channel MTP cells also exhibit good cycling endurance as well as disturbance immunity. The blanket boost scheme can remedy the charge loss problem under thin gate dielectrics.

  14. Double optical gating of high-order harmonic generation with carrier-envelope phase stabilized lasers.

    PubMed

    Mashiko, Hiroki; Gilbertson, Steve; Li, Chengquan; Khan, Sabih D; Shakya, Mahendra M; Moon, Eric; Chang, Zenghu

    2008-03-14

    We demonstrated a novel optical switch to control the high-order harmonic generation process so that single attosecond pulses can be generated with multiple-cycle pulses. The technique combines two powerful optical gating methods: polarization gating and two-color gating. An extreme ultraviolet supercontinuum supporting 130 as was generated with neon gas using 9 fs laser pulses. We discovered a unique dependence of the harmonic spectra on the carrier-envelope phase of the laser fields, which repeats every 2 pi radians.

  15. Double Optical Gating of High-Order Harmonic Generation with Carrier-Envelope Phase Stabilized Lasers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Mashiko, Hiroki; Gilbertson, Steve; Li, Chengquan

    2008-03-14

    We demonstrated a novel optical switch to control the high-order harmonic generation process so that single attosecond pulses can be generated with multiple-cycle pulses. The technique combines two powerful optical gating methods: polarization gating and two-color gating. An extreme ultraviolet supercontinuum supporting 130 as was generated with neon gas using 9 fs laser pulses. We discovered a unique dependence of the harmonic spectra on the carrier-envelope phase of the laser fields, which repeats every 2{pi} radians.

  16. Hysteresis free negative total gate capacitance in junctionless transistors

    NASA Astrophysics Data System (ADS)

    Gupta, Manish; Kranti, Abhinav

    2017-09-01

    In this work, we report on the hysteresis free impact ionization induced off-to-on transition while preserving sub-60 mV/decade Subthreshold swing (S-swing) using asymmetric mode operation in double gate silicon (Si) and germanium (Ge) junctionless (JL) transistor. It is shown that sub-60 mV/decade steep switching due to impact ionization implies a negative value of the total gate capacitance. The performance of asymmetric gate JL transistor is compared with symmetric gate operation of JL device, and the condition for hysteresis free current transition with a sub-60 mV/decade switching is analyzed through the product of current density (J) and electric field (E). It is shown that asymmetric gate operation limits the degree of impact ionization inherent in the semiconductor film to levels sufficient for negative total gate capacitance but lower than that required for the occurrence of hysteresis. The work highlights new viewpoints related to the suppression of hysteresis associated with steep switching JL transistors while maintaining S-swing within the range 6-15 mV/decade leading to the negative value of total gate capacitance.

  17. Cellular defibrillation: interaction of micro-scale electric fields with voltage-gated ion channels.

    PubMed

    Kargol, Armin; Malkinski, Leszek; Eskandari, Rahmatollah; Carter, Maya; Livingston, Daniel

    2015-09-01

    We study the effect of micro-scale electric fields on voltage-gated ion channels in mammalian cell membranes. Such micro- and nano-scale electric fields mimic the effects of multiferroic nanoparticles that were recently proposed [1] as a novel way of controlling the function of voltage-sensing biomolecules such as ion channels. This article describes experimental procedures and initial results that reveal the effect of the electric field, in close proximity of cells, on the ion transport through voltage-gated ion channels. We present two configurations of the whole-cell patch-clamping apparatus that were used to detect the effect of external stimulation on ionic currents and discuss preliminary results that indicate modulation of the ionic currents consistent with the applied stimulus.

  18. Nanoscale Roughness and Morphology Affect the IsoElectric Point of Titania Surfaces

    PubMed Central

    Borghi, Francesca; Vyas, Varun; Podestà, Alessandro; Milani, Paolo

    2013-01-01

    We report on the systematic investigation of the role of surface nanoscale roughness and morphology on the charging behaviour of nanostructured titania (TiO2) surfaces in aqueous solutions. IsoElectric Points (IEPs) of surfaces have been characterized by direct measurement of the electrostatic double layer interactions between titania surfaces and the micrometer-sized spherical silica probe of an atomic force microscope in NaCl aqueous electrolyte. The use of a colloidal probe provides well-defined interaction geometry and allows effectively probing the overall effect of nanoscale morphology. By using supersonic cluster beam deposition to fabricate nanostructured titania films, we achieved a quantitative control over the surface morphological parameters. We performed a systematical exploration of the electrical double layer properties in different interaction regimes characterized by different ratios of characteristic nanometric lengths of the system: the surface rms roughness Rq, the correlation length ξ and the Debye length λD. We observed a remarkable reduction by several pH units of IEP on rough nanostructured surfaces, with respect to flat crystalline rutile TiO2. In order to explain the observed behavior of IEP, we consider the roughness-induced self-overlap of the electrical double layers as a potential source of deviation from the trend expected for flat surfaces. PMID:23874708

  19. Dynamic superconcentration at critical-point double-layer gates of conducting nanoporous granules due to asymmetric tangential fluxes

    PubMed Central

    Wang, Shau-Chun; Wei, Hsien-Hung; Chen, Hsiao-Ping; Tsai, Min-Hsuan; Yu, Chun-Ching; Chang, Hsueh-Chia

    2008-01-01

    A transient 106-fold concentration of double-layer counterions by a high-intensity electric field is demonstrated at the exit pole of a millimeter-sized conducting nanoporous granule that permits ion permeation. The phenomenon is attributed to a unique counterion screening dynamics that transforms half of the surface field into a converging one toward the ejecting pole. The resulting surface conduction flux then funnels a large upstream electro-osmotic convective counterion flux into the injecting hemisphere toward the zero-dimensional gate of the ejecting hemisphere to produce the superconcentration. As the concentrated counterion is ejected into the electroneutral bulk electrolyte, it attracts co-ions and produce a corresponding concentration of the co-ions. This mechanism is also shown to trap and concentrate co-ion microcolloids of micron sizes too (macroions) and hence has potential application in bead-based molecular assays. PMID:19693364

  20. A novel double gate metal source/drain Schottky MOSFET as an inverter

    NASA Astrophysics Data System (ADS)

    Loan, Sajad A.; Kumar, Sunil; Alamoud, Abdulrahman M.

    2016-03-01

    In this work, we propose and simulate a novel structure of a double gate metal source/drain (MSD) Schottky MOSFET. The novelty of the proposed device is that it realizes a complete CMOS inverter action, which is actually being realized by the combination of two n and p type MOS transistors in the conventional CMOS technology. Therefore, the use of this device will significantly reduce the transistor count in implementing combinational and sequential circuits. Further, there is a significant reduction in the number of junctions and regions in the proposed device in comparison to the conventional CMOS inverter. Therefore, the proposed device is compact and can consume less power. The proposed device has been named as Sajad-Sunil-Schottky (SSS) device. The mixed mode circuit analysis of the proposed SSS device has shown that a CMOS inverter action with high logic level (VOH) and low logic level (VOL) as ∼VDD and ∼ground respectively. A two dimensional calibrated simulation study using the experimental data has revealed that the proposed SSS device in n and p type modes have subthreshold slopes (S) of 130 mV/decade and 85 mV/decade respectively and have reasonable high ION and ION/IOFF ratio's. Furthermore, it has been proved that such a device action cannot be realised by folding the conventional doped n and p MOS transistors.

  1. Aqueous gating of van der Waals materials on bilayer nanopaper.

    PubMed

    Bao, Wenzhong; Fang, Zhiqiang; Wan, Jiayu; Dai, Jiaqi; Zhu, Hongli; Han, Xiaogang; Yang, Xiaofeng; Preston, Colin; Hu, Liangbing

    2014-10-28

    In this work, we report transistors made of van der Waals materials on a mesoporous paper with a smooth nanoscale surface. The aqueous transistor has a novel planar structure with source, drain, and gate electrodes on the same surface of the paper, while the mesoporous paper is used as an electrolyte reservoir. These transistors are enabled by an all-cellulose paper with nanofibrillated cellulose (NFC) on the top surface that leads to an excellent surface smoothness, while the rest of the microsized cellulose fibers can absorb electrolyte effectively. Based on two-dimensional van der Waals materials, including MoS2 and graphene, we demonstrate high-performance transistors with a large on-off ratio and low subthreshold swing. Such planar transistors with absorbed electrolyte gating can be used as sensors integrated with other components to form paper microfluidic systems. This study is significant for future paper-based electronics and biosensors.

  2. A hybrid life cycle inventory of nano-scale semiconductor manufacturing.

    PubMed

    Krishnan, Nikhil; Boyd, Sarah; Somani, Ajay; Raoux, Sebastien; Clark, Daniel; Dornfeld, David

    2008-04-15

    The manufacturing of modern semiconductor devices involves a complex set of nanoscale fabrication processes that are energy and resource intensive, and generate significant waste. It is important to understand and reduce the environmental impacts of semiconductor manufacturing because these devices are ubiquitous components in electronics. Furthermore, the fabrication processes used in the semiconductor industry are finding increasing application in other products, such as microelectromechanical systems (MEMS), flat panel displays, and photovoltaics. In this work we develop a library of typical gate-to-gate materials and energy requirements, as well as emissions associated with a complete set of fabrication process models used in manufacturing a modern microprocessor. In addition, we evaluate upstream energy requirements associated with chemicals and materials using both existing process life cycle assessment (LCA) databases and an economic input-output (EIO) model. The result is a comprehensive data set and methodology that may be used to estimate and improve the environmental performance of a broad range of electronics and other emerging applications that involve nano and micro fabrication.

  3. Preface: Charge transport in nanoscale junctions

    NASA Astrophysics Data System (ADS)

    Albrecht, Tim; Kornyshev, Alexei; Bjørnholm, Thomas

    2008-09-01

    many particle excitations, new surface states in semiconductor electrodes, various mechanisms for single molecule rectification of the current, inelastic electron spectra and SERS spectroscopy. Three terminal architectures allowing (electrochemical) gating and transistor effects. Electrochemical nanojunctions and gating: intermolecular electron transfer in multi-redox metalloproteins, contact force modulation, characteristic current-noise patterns due to conformational fluctuations, resonance effects and electrocatalysis. Novel architectures: linear coupled quantum-dot-bridged junctions, electrochemical redox mediated transfer in two center systems leading to double maxima current-voltage plots and negative differential resistance, molecular-nanoparticle hybrid junctions and unexpected mesoscopic effects in polymeric wires. Device integration: techniques for creating stable metal/molecule/metal junctions using 'nano-alligator clips' and integration with 'traditional' silicon-based technology. The Guest Editors would like to thank all of the authors and referees of this special issue for their meticulous work in making each paper a valuable contribution to this research area, the early-bird authors for their patience, and Journal of Physics: Condensed Matter editorial staff in Bristol for their continuous support.

  4. Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties

    NASA Astrophysics Data System (ADS)

    Gasparyan, F.; Khondkaryan, H.; Arakelyan, A.; Zadorozhnyi, I.; Pud, S.; Vitusevich, S.

    2016-08-01

    The transport, noise, and photosensitivity properties of an array of silicon nanowire (NW) p+-p-p+ field-effect transistors (FETs) are investigated. The peculiarities of photosensitivity and detectivity are analyzed over a wide spectrum range. The absorbance of p-Si NW shifts to the short wavelength region compared with bulk Si. The photocurrent and photosensitivity reach increased values in the UV range of the spectrum at 300 K. It is shown that sensitivity values can be tuned by the drain-source voltage and may reach record values of up to 2-4 A/W at a wavelength of 300 nm at room temperature. Low-frequency noise studies allow calculating the photodetectivity values, which increase with decreasing wavelength down to 300 nm. We show that the drain current of Si NW biochemical sensors substantially depends on pH value and the signal-to-noise ratio reaches the high value of 105. Increasing pH sensitivity with gate voltage is revealed for certain source-drain currents of pH-sensors based on Si NW FETs. The noise characteristic index decreases from 1.1 to 0.7 with the growth of the liquid gate voltage. Noise behavior is successfully explained in the framework of the correlated number-mobility unified fluctuation model. pH sensitivity increases as a result of the increase in liquid gate voltage, thus giving the opportunity to measure very low proton concentrations in the electrolyte medium at certain values of the liquid gate voltage.

  5. Dual-Gated Active Metasurface at 1550 nm with Wide (>300°) Phase Tunability.

    PubMed

    Kafaie Shirmanesh, Ghazaleh; Sokhoyan, Ruzan; Pala, Ragip A; Atwater, Harry A

    2018-05-09

    Active metasurfaces composed of electrically reconfigurable nanoscale subwavelength antenna arrays can enable real-time control of scattered light amplitude and phase. Achievement of widely tunable phase and amplitude in chip-based active metasurfaces operating at or near 1550 nm wavelength has considerable potential for active beam steering, dynamic hologram rendition, and realization of flat optics with reconfigurable focal lengths. Previously, electrically tunable conducting oxide-based reflectarray metasurfaces have demonstrated dynamic phase control of reflected light with a maximum phase shift of 184° ( Nano Lett. 2016 , 16 , 5319 ). Here, we introduce a dual-gated reflectarray metasurface architecture that enables much wider (>300°) phase tunability. We explore light-matter interactions with dual-gated metasurface elements that incorporate two independent voltage-controlled MOS field effect channels connected in series to form a single metasurface element that enables wider phase tunability. Using indium tin oxide (ITO) as the active metasurface material and a composite hafnia/alumina gate dielectric, we demonstrate a prototype dual-gated metasurface with a continuous phase shift from 0 to 303° and a relative reflectance modulation of 89% under applied voltage bias of 6.5 V.

  6. Label Free Detection of Biomolecules Using Charge-Plasma-Based Gate Underlap Dielectric Modulated Junctionless TFET

    NASA Astrophysics Data System (ADS)

    Wadhwa, Girish; Raj, Balwinder

    2018-05-01

    Nanoscale devices are emerging as a platform for detecting biomolecules. Various issues were observed during the fabrication process such as random dopant fluctuation and thermal budget. To reduce these issues charge-plasma-based concept is introduced. This paper proposes the implementation of charge-plasma-based gate underlap dielectric modulated junctionless tunnel field effect transistor (DM-JLTFET) for the revelation of biomolecule immobilized in the open cavity gate channel region. In this p+ source and n+ drain regions are introduced by employing different work function over the intrinsic silicon. Also dual material gate architecture is implemented to reduce short channel effect without abandoning any other device characteristic. The sensitivity of biosensor is studied for both the neutral and charge-neutral biomolecules. The effect of device parameters such as channel thickness, cavity length and cavity thickness on drain current have been analyzed through simulations. This paper investigates the performance of charge-plasma-based gate underlap DM-JLTFET for biomolecule sensing applications while varying dielectric constant, charge density at different biasing conditions.

  7. Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors.

    PubMed

    Gluschke, J G; Seidl, J; Lyttleton, R W; Carrad, D J; Cochrane, J W; Lehmann, S; Samuelson, L; Micolich, A P

    2018-06-27

    We report the development of nanowire field-effect transistors featuring an ultrathin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of <100 nm thick parylene films on III-V nanowires standing vertically on a growth substrate or horizontally on a device substrate. The former case gives conformally coated nanowires, which we used to produce functional Ω-gate and gate-all-around structures. These give subthreshold swings as low as 140 mV/dec and on/off ratios exceeding 10 3 at room temperature. For the gate-all-around structure, we developed a novel fabrication strategy that overcomes some of the limitations with previous lateral wrap-gate nanowire transistors. Finally, we show that parylene can be deposited over chemically treated nanowire surfaces, a feature generally not possible with oxides produced by atomic layer deposition due to the surface "self-cleaning" effect. Our results highlight the potential for parylene as an alternative ultrathin insulator in nanoscale electronic devices more broadly, with potential applications extending into nanobioelectronics due to parylene's well-established biocompatible properties.

  8. Modeling of Nano-Scale Transistors and Memory Devices for Low Power Applications

    NASA Astrophysics Data System (ADS)

    Cao, Xi

    As the featuring size of transistors scaled down to sub-20 nm, the continuous scaling of power has become one of the main challenges of the semiconductor industry. The power issue is raised by the barely scalable supply voltage and a limitation on the subthreshold swing (SS) of conventional metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, self-consistent quantum transport device simulators are developed to examine the nanoscale transistors based on black phosphorus (BP) materials. The scaling limit of double-gated BP MOSFETs is assessed. To reduce the SS below the thermionic limit for ultra-steep switching, tunnel FETs (TFETs) and vertical ballistic impact ionization FETs based on BP and its heterojunctions are investigated. Furthermore, the ferroelectric tunneling junction (FTJ) is modeled and examined for potential low power memory applications. For BP MOSFETs, the device physics at the ultimate scaling limit are examined. The performance of monolayer BP MOSFETs is projected to sub-10 nm and compared with the International Technology Roadmap for Semiconductors (ITRS) requirements. And the interplay of quantum mechanical effects and the highly anisotropic bandstructure of BP at this scale is investigated. By choice of layer number and crystalline direction, BP materials can offer a range of bandgap and effective mass values, which is attractive for TFET applications. Therefore, scaling behaviors of BP TFETs near and below the 10 nm scale are studied. The gate oxide thickness scaling and the effect of high-k dielectric are compared between the TFETs and the MOSFETs. For the TFETs with the gate lengths beyond 10 nm and at the sub-10 nm scale, the direct-source-to-drain tunneling issues are evaluated, and different strategies to achieve ultra-steep switching are specified. In a sub-10 nm graphene-BP-graphene heterojunction transistor, the sharp turnon behavior was observed, under a small source-drain bias of 0.1 V. The fast switch is

  9. Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Gasparyan, F.; Forschungszentrum Jülich, Peter Grünberg Institute; Khondkaryan, H.

    2016-08-14

    The transport, noise, and photosensitivity properties of an array of silicon nanowire (NW) p{sup +}-p-p{sup +} field-effect transistors (FETs) are investigated. The peculiarities of photosensitivity and detectivity are analyzed over a wide spectrum range. The absorbance of p-Si NW shifts to the short wavelength region compared with bulk Si. The photocurrent and photosensitivity reach increased values in the UV range of the spectrum at 300 K. It is shown that sensitivity values can be tuned by the drain-source voltage and may reach record values of up to 2–4 A/W at a wavelength of 300 nm at room temperature. Low-frequency noise studies allow calculatingmore » the photodetectivity values, which increase with decreasing wavelength down to 300 nm. We show that the drain current of Si NW biochemical sensors substantially depends on pH value and the signal-to-noise ratio reaches the high value of 10{sup 5}. Increasing pH sensitivity with gate voltage is revealed for certain source-drain currents of pH-sensors based on Si NW FETs. The noise characteristic index decreases from 1.1 to 0.7 with the growth of the liquid gate voltage. Noise behavior is successfully explained in the framework of the correlated number-mobility unified fluctuation model. pH sensitivity increases as a result of the increase in liquid gate voltage, thus giving the opportunity to measure very low proton concentrations in the electrolyte medium at certain values of the liquid gate voltage.« less

  10. Plasmid-derived DNA Strand Displacement Gates for Implementing Chemical Reaction Networks.

    PubMed

    Chen, Yuan-Jyue; Rao, Sundipta D; Seelig, Georg

    2015-11-25

    DNA nanotechnology requires large amounts of highly pure DNA as an engineering material. Plasmid DNA could meet this need since it is replicated with high fidelity, is readily amplified through bacterial culture and can be stored indefinitely in the form of bacterial glycerol stocks. However, the double-stranded nature of plasmid DNA has so far hindered its efficient use for construction of DNA nanostructures or devices that typically contain single-stranded or branched domains. In recent work, it was found that nicked double stranded DNA (ndsDNA) strand displacement gates could be sourced from plasmid DNA. The following is a protocol that details how these ndsDNA gates can be efficiently encoded in plasmids and can be derived from the plasmids through a small number of enzymatic processing steps. Also given is a protocol for testing ndsDNA gates using fluorescence kinetics measurements. NdsDNA gates can be used to implement arbitrary chemical reaction networks (CRNs) and thus provide a pathway towards the use of the CRN formalism as a prescriptive molecular programming language. To demonstrate this technology, a multi-step reaction cascade with catalytic kinetics is constructed. Further it is shown that plasmid-derived components perform better than identical components assembled from synthetic DNA.

  11. A two-dimensional (2D) analytical subthreshold swing and transconductance model of underlap dual-material double-gate (DMDG) MOSFET for analog/RF applications

    NASA Astrophysics Data System (ADS)

    Narendar, Vadthiya; Rai, Saurabh; Tiwari, Siddharth; Mishra, R. A.

    2016-12-01

    The double-gate (DG) metal-oxide-semiconductor field effect transistors (MOSFETs) are the choice of technology in sub -100 nm regime of leading microelectronics industry. To enhance the analog and RF performance of DG MOSFET, an underlap dual-material (DM) DG MOSFET device structure has been considered because, it has the advantages of both underlap as well as that of dual-material gate (DMG). A 2D analytical surface potential, subthreshold current, subthreshold swing as well as transconductance modelling of underlap DMDG MOSFET has been done by solving the Poisson's equation. It has also been found that, numerically simulated data approves the analytically modelled data with commendable accuracy. As underlap length (Lun) increases, a substantial reduction of subthreshold current due to enhanced gate control over channel regime is observed. DMG structure facilitates to improve the average velocity of carriers which leads to superior drive current of the device. The underlap DMDG MOSFET device structure demonstrates an ameliorated subthreshold characteristic. The analog figure of merits (FOMs) such as transconductance (gm), transconductance generation factor (TGF), output conductance (gd), early voltage (VEA), intrinsic gain (AV) and RF FOMs namely cut-off frequency (fT), gain frequency product (GFP), transconductance frequency product (TFP) and gain transconductance frequency product (GTFP) have been evaluated. The aforesaid analysis revels that, the device is best suited for communication related Analog/RF applications.

  12. Toward Efficient Design of Reversible Logic Gates in Quantum-Dot Cellular Automata with Power Dissipation Analysis

    NASA Astrophysics Data System (ADS)

    Sasamal, Trailokya Nath; Singh, Ashutosh Kumar; Ghanekar, Umesh

    2018-04-01

    Nanotechnologies, remarkably Quantum-dot Cellular Automata (QCA), offer an attractive perspective for future computing technologies. In this paper, QCA is investigated as an implementation method for designing area and power efficient reversible logic gates. The proposed designs achieve superior performance by incorporating a compact 2-input XOR gate. The proposed design for Feynman, Toffoli, and Fredkin gates demonstrates 28.12, 24.4, and 7% reduction in cell count and utilizes 46, 24.4, and 7.6% less area, respectively over previous best designs. Regarding the cell count (area cover) that of the proposed Peres gate and Double Feynman gate are 44.32% (21.5%) and 12% (25%), respectively less than the most compact previous designs. Further, the delay of Fredkin and Toffoli gates is 0.75 clock cycles, which is equal to the delay of the previous best designs. While the Feynman and Double Feynman gates achieve a delay of 0.5 clock cycles, equal to the least delay previous one. Energy analysis confirms that the average energy dissipation of the developed Feynman, Toffoli, and Fredkin gates is 30.80, 18.08, and 4.3% (for 1.0 E k energy level), respectively less compared to best reported designs. This emphasizes the beneficial role of using proposed reversible gates to design complex and power efficient QCA circuits. The QCADesigner tool is used to validate the layout of the proposed designs, and the QCAPro tool is used to evaluate the energy dissipation.

  13. Gate modulation of proton transport in a nanopore.

    PubMed

    Mei, Lanju; Yeh, Li-Hsien; Qian, Shizhi

    2016-03-14

    Proton transport in confined spaces plays a crucial role in many biological processes as well as in modern technological applications, such as fuel cells. To achieve active control of proton conductance, we investigate for the first time the gate modulation of proton transport in a pH-regulated nanopore by a multi-ion model. The model takes into account surface protonation/deprotonation reactions, surface curvature, electroosmotic flow, Stern layer, and electric double layer overlap. The proposed model is validated by good agreement with the existing experimental data on nanopore conductance with and without a gate voltage. The results show that the modulation of proton transport in a nanopore depends on the concentration of the background salt and solution pH. Without background salt, the gated nanopore exhibits an interesting ambipolar conductance behavior when pH is close to the isoelectric point of the dielectric pore material, and the net ionic and proton conductance can be actively regulated with a gate voltage as low as 1 V. The higher the background salt concentration, the lower is the performance of the gate control on the proton transport.

  14. A solid dielectric gated graphene nanosensor in electrolyte solutions.

    PubMed

    Zhu, Yibo; Wang, Cheng; Petrone, Nicholas; Yu, Jaeeun; Nuckolls, Colin; Hone, James; Lin, Qiao

    2015-03-23

    This letter presents a graphene field effect transistor (GFET) nanosensor that, with a solid gate provided by a high- κ dielectric, allows analyte detection in liquid media at low gate voltages. The gate is embedded within the sensor and thus is isolated from a sample solution, offering a high level of integration and miniaturization and eliminating errors caused by the liquid disturbance, desirable for both in vitro and in vivo applications. We demonstrate that the GFET nanosensor can be used to measure pH changes in a range of 5.3-9.3. Based on the experimental observations and quantitative analysis, the charging of an electrical double layer capacitor is found to be the major mechanism of pH sensing.

  15. High-sensitivity pH sensor using separative extended-gate field-effect transistors with single-walled carbon-nanotube networks

    NASA Astrophysics Data System (ADS)

    Pyo, Ju-Young; Cho, Won-Ju

    2018-04-01

    We fabricate high-sensitivity pH sensors using single-walled carbon-nanotube (SWCNT) network thin-film transistors (TFTs). The sensing and transducer parts of the pH sensor are composed of separative extended-sensing gates (ESGs) with SnO2 ion-sensitive membranes and double-gate structure TFTs with thin SWCNT network channels of ∼1 nm and AlO x top-gate insulators formed by the solution-deposition method. To prevent thermal process-induced damages on the SWCNT channel layer due to the post-deposition annealing process and improve the electrical characteristics of the SWCNT-TFTs, microwave irradiation is applied at low temperatures. As a result, a pH sensitivity of 7.6 V/pH, far beyond the Nernst limit, is obtained owing to the capacitive coupling effect between the top- and bottom-gate insulators of the SWCNT-TFTs. Therefore, double-gate structure SWCNT-TFTs with separated ESGs are expected to be highly beneficial for high-sensitivity disposable biosensor applications.

  16. Lateral energy band profile modulation in tunnel field effect transistors based on gate structure engineering

    NASA Astrophysics Data System (ADS)

    Cui, Ning; Liang, Renrong; Wang, Jing; Xu, Jun

    2012-06-01

    Choosing novel materials and structures is important for enhancing the on-state current in tunnel field-effect transistors (TFETs). In this paper, we reveal that the on-state performance of TFETs is mainly determined by the energy band profile of the channel. According to this interpretation, we present a new concept of energy band profile modulation (BPM) achieved with gate structure engineering. It is believed that this approach can be used to suppress the ambipolar effect. Based on this method, a Si TFET device with a symmetrical tri-material-gate (TMG) structure is proposed. Two-dimensional numerical simulations demonstrated that the special band profile in this device can boost on-state performance, and it also suppresses the off-state current induced by the ambipolar effect. These unique advantages are maintained over a wide range of gate lengths and supply voltages. The BPM concept can serve as a guideline for improving the performance of nanoscale TFET devices.

  17. Gates Fund Creates Plan for College Completion

    ERIC Educational Resources Information Center

    Gose, Ben

    2008-01-01

    The Bill & Melinda Gates Foundation plans to spend several hundred million dollars over the next five years to double the number of low-income young people who complete a college degree or certificate program by age 26. Foundation officials described the ambitious plan to an exclusive group of education leaders, citing 2025 as a target goal. If…

  18. Investigating the Mobility of Trilayer Graphene Nanoribbon in Nanoscale FETs

    NASA Astrophysics Data System (ADS)

    Rahmani, Meisam; Ghafoori Fard, Hassan; Ahmadi, Mohammad Taghi; Rahbarpour, Saeideh; Habibiyan, Hamidreza; Varmazyari, Vali; Rahmani, Komeil

    2017-10-01

    The aim of the present paper is to investigate the scaling behaviors of charge carrier mobility as one of the most remarkable characteristics for modeling of nanoscale field-effect transistors (FETs). Many research groups in academia and industry are contributing to the model development and experimental identification of multi-layer graphene FET-based devices. The approach in the present work is to provide an analytical model for carrier mobility of tri-layer graphene nanoribbon (TGN) FET. In order to do so, one starts by identifying the analytical modeling of TGN carrier velocity and ballistic conductance. At the end, a model of charge carrier mobility with numerical solution is analytically derived for TGN FET, in which the carrier concentration, temperature and channel length characteristics dependence are highlighted. Moreover, variation of band gap and gate voltage during the proposed device operation and its effect on carrier mobility is investigated. To evaluate the nanoscale FET performance, the carrier mobility model is also adopted to obtain the I-V characteristics of the device. In order to verify the accuracy of the proposed analytical model for TGN mobility, it is compared to the existing experimental data, and a satisfactory agreement is reported for analogous ambient conditions. Moreover, the proposed model is compared with the published data of single-layer graphene and bi-layer graphene, in which the obtained results demonstrate significant insights into the importance of charge carrier mobility impact in high-performance TGN FET. The work presented here is one step towards an applicable model for real-world nanoscale FETs.

  19. Nanoscale fabrication using single-ion impacts

    NASA Astrophysics Data System (ADS)

    Millar, Victoria; Pakes, Chris I.; Cimmino, Alberto; Brett, David; Jamieson, David N.; Prawer, Steven D.; Yang, Changyi; Rout, Bidhudutta; McKinnon, Rita P.; Dzurak, Andrew S.; Clark, Robert G.

    2001-11-01

    We describe a novel technique for the fabrication of nanoscale structures, based on the development of localized chemical modification caused in a PMMA resist by the implantation of single ions. The implantation of 2 MeV He ions through a thin layer of PMMA into an underlying silicon substrate causes latent damage in the resist. On development of the resist we demonstrate the formation within the PMMA layer of clearly defined etched holes, of typical diameter 30 nm, observed using an atomic force microscope employing a carbon nanotube SPM probe in intermittent-contact mode. This technique has significant potential applications. Used purely to register the passage of an ion, it may be a useful verification of the impact sites in an ion-beam modification process operating at the single-ion level. Furthermore, making use of the hole in the PMMA layer to perform subsequent fabrication steps, it may be applied to the fabrication of self-aligned structures in which surface features are fabricated directly above regions of an underlying substrate that are locally doped by the implanted ion. Our primary interest in single-ion resists relates to the development of a solid-state quantum computer based on an array of 31P atoms (which act as qubits) embedded with nanoscale precision in a silicon matrix. One proposal for the fabrication of such an array is by phosphorous-ion implantation. A single-ion resist would permit an accurate verification of 31P implantation sites. Subsequent metalisation of the latent damage may allow the fabrication of self-aligned metal gates above buried phosphorous atoms.

  20. Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane

    NASA Astrophysics Data System (ADS)

    Knapp, T. J.; Mohr, R. T.; Li, Yize Stephanie; Thorgrimsson, Brandur; Foote, Ryan H.; Wu, Xian; Ward, Daniel R.; Savage, D. E.; Lagally, M. G.; Friesen, Mark; Coppersmith, S. N.; Eriksson, M. A.

    We report the characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. Previously, all heterostructures used to form quantum dots were created using the strain-grading method of strain relaxation, a method that necessarily introduces misfit dislocations into a heterostructure and thereby degrades the reproducibility of quantum devices. Using a SiGe nanomembrane as a virtual substrate eliminates the need for misfit dislocations but requires a wet-transfer process that results in a non-epitaxial interface in close proximity to the quantum dots. We show that this interface does not prevent the formation of quantum dots, and is compatible with a tunable inter-dot tunnel coupling, the identification of spin states, and the measurement of a singlet-to-triplet transition as a function of the applied magnetic field. This work was supported in part by ARO (W911NF-12-0607), NSF (DMR-1206915, PHY-1104660), and the United States Department of Defense. The views and conclusions contained in this document are those of the author and should not be interpreted as representing the official policies, either expressly or implied, of the US Government. T.J. Knapp et al. (2015). arXiv:1510.08888 [cond-mat.mes-hall].

  1. Dual-gate polysilicon nanoribbon biosensors enable high sensitivity detection of proteins.

    PubMed

    Zeimpekis, I; Sun, K; Hu, C; Ditshego, N M J; Thomas, O; de Planque, M R R; Chong, H M H; Morgan, H; Ashburn, P

    2016-04-22

    We demonstrate the advantages of dual-gate polysilicon nanoribbon biosensors with a comprehensive evaluation of different measurement schemes for pH and protein sensing. In particular, we compare the detection of voltage and current changes when top- and bottom-gate bias is applied. Measurements of pH show that a large voltage shift of 491 mV pH(-1) is obtained in the subthreshold region when the top-gate is kept at a fixed potential and the bottom-gate is varied (voltage sweep). This is an improvement of 16 times over the 30 mV pH(-1) measured using a top-gate sweep with the bottom-gate at a fixed potential. A similar large voltage shift of 175 mV is obtained when the protein avidin is sensed using a bottom-gate sweep. This is an improvement of 20 times compared with the 8.8 mV achieved from a top-gate sweep. Current measurements using bottom-gate sweeps do not deliver the same signal amplification as when using bottom-gate sweeps to measure voltage shifts. Thus, for detecting a small signal change on protein binding, it is advantageous to employ a double-gate transistor and to measure a voltage shift using a bottom-gate sweep. For top-gate sweeps, the use of a dual-gate transistor enables the current sensitivity to be enhanced by applying a negative bias to the bottom-gate to reduce the carrier concentration in the nanoribbon. For pH measurements, the current sensitivity increases from 65% to 149% and for avidin sensing it increases from 1.4% to 2.5%.

  2. Dual-gate polysilicon nanoribbon biosensors enable high sensitivity detection of proteins

    NASA Astrophysics Data System (ADS)

    Zeimpekis, I.; Sun, K.; Hu, C.; Ditshego, N. M. J.; Thomas, O.; de Planque, M. R. R.; Chong, H. M. H.; Morgan, H.; Ashburn, P.

    2016-04-01

    We demonstrate the advantages of dual-gate polysilicon nanoribbon biosensors with a comprehensive evaluation of different measurement schemes for pH and protein sensing. In particular, we compare the detection of voltage and current changes when top- and bottom-gate bias is applied. Measurements of pH show that a large voltage shift of 491 mV pH-1 is obtained in the subthreshold region when the top-gate is kept at a fixed potential and the bottom-gate is varied (voltage sweep). This is an improvement of 16 times over the 30 mV pH-1 measured using a top-gate sweep with the bottom-gate at a fixed potential. A similar large voltage shift of 175 mV is obtained when the protein avidin is sensed using a bottom-gate sweep. This is an improvement of 20 times compared with the 8.8 mV achieved from a top-gate sweep. Current measurements using bottom-gate sweeps do not deliver the same signal amplification as when using bottom-gate sweeps to measure voltage shifts. Thus, for detecting a small signal change on protein binding, it is advantageous to employ a double-gate transistor and to measure a voltage shift using a bottom-gate sweep. For top-gate sweeps, the use of a dual-gate transistor enables the current sensitivity to be enhanced by applying a negative bias to the bottom-gate to reduce the carrier concentration in the nanoribbon. For pH measurements, the current sensitivity increases from 65% to 149% and for avidin sensing it increases from 1.4% to 2.5%.

  3. Finger-gate manipulated quantum transport in Dirac materials

    NASA Astrophysics Data System (ADS)

    Kleftogiannis, Ioannis; Tang, Chi-Shung; Cheng, Shun-Jen

    2015-05-01

    We investigate the quantum transport properties of multichannel nanoribbons made of materials described by the Dirac equation, under an in-plane magnetic field. In the low energy regime, positive and negative finger-gate potentials allow the electrons to make intra-subband transitions via hole-like or electron-like quasibound states (QBS), respectively, resulting in dips in the conductance. In the high energy regime, double dip structures in the conductance are found, attributed to spin-flip or spin-nonflip inter-subband transitions through the QBSs. Inverting the finger-gate polarity offers the possibility to manipulate the spin polarized electronic transport to achieve a controlled spin-switch.

  4. Spin measurement in an undoped Si/SiGe double quantum dot incorporating a micromagnet

    NASA Astrophysics Data System (ADS)

    Wu, Xian; Ward, Daniel; Prance, Jonathan; Kim, Dohun; Shi, Zhan; Mohr, Robert; Gamble, John; Savage, Donald; Lagally, Max; Friesen, Mark; Coppersmith, Susan; Eriksson, Mark

    2014-03-01

    We present measurements on a double dot formed in an accumulation-mode undoped Si/SiGe heterostructure. The double dot incorporates a proximal micromagnet to generate a stable magnetic field difference between the quantum dots. The gate design incorporates two layers of gates, and the upper layer of gates is split into five different sections to decrease crosstalk between different gates. A novel pattern of the lower layer gates enhances the tunability of tunnel rates. We will describe our attempts to create a singlet-triplet qubit in this device. This work was supported in part by ARO(W911NF-12-0607), NSF(DMR-1206915), and the United States Department of Defense. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressly or implied, of the US Government. Now works at Lancaster University, UK.

  5. A carrier-based analytical theory for negative capacitance symmetric double-gate field effect transistors and its simulation verification

    NASA Astrophysics Data System (ADS)

    Jiang, Chunsheng; Liang, Renrong; Wang, Jing; Xu, Jun

    2015-09-01

    A carrier-based analytical drain current model for negative capacitance symmetric double-gate field effect transistors (NC-SDG FETs) is proposed by solving the differential equation of the carrier, the Pao-Sah current formulation, and the Landau-Khalatnikov equation. The carrier equation is derived from Poisson’s equation and the Boltzmann distribution law. According to the model, an amplified semiconductor surface potential and a steeper subthreshold slope could be obtained with suitable thicknesses of the ferroelectric film and insulator layer at room temperature. Results predicted by the analytical model agree well with those of the numerical simulation from a 2D simulator without any fitting parameters. The analytical model is valid for all operation regions and captures the transitions between them without any auxiliary variables or functions. This model can be used to explore the operating mechanisms of NC-SDG FETs and to optimize device performance.

  6. Memory and learning behaviors mimicked in nanogranular SiO2-based proton conductor gated oxide-based synaptic transistors

    NASA Astrophysics Data System (ADS)

    Wan, Chang Jin; Zhu, Li Qiang; Zhou, Ju Mei; Shi, Yi; Wan, Qing

    2013-10-01

    In neuroscience, signal processing, memory and learning function are established in the brain by modifying ionic fluxes in neurons and synapses. Emulation of memory and learning behaviors of biological systems by nanoscale ionic/electronic devices is highly desirable for building neuromorphic systems or even artificial neural networks. Here, novel artificial synapses based on junctionless oxide-based protonic/electronic hybrid transistors gated by nanogranular phosphorus-doped SiO2-based proton-conducting films are fabricated on glass substrates by a room-temperature process. Short-term memory (STM) and long-term memory (LTM) are mimicked by tuning the pulse gate voltage amplitude. The LTM process in such an artificial synapse is due to the proton-related interfacial electrochemical reaction. Our results are highly desirable for building future neuromorphic systems or even artificial networks via electronic elements.In neuroscience, signal processing, memory and learning function are established in the brain by modifying ionic fluxes in neurons and synapses. Emulation of memory and learning behaviors of biological systems by nanoscale ionic/electronic devices is highly desirable for building neuromorphic systems or even artificial neural networks. Here, novel artificial synapses based on junctionless oxide-based protonic/electronic hybrid transistors gated by nanogranular phosphorus-doped SiO2-based proton-conducting films are fabricated on glass substrates by a room-temperature process. Short-term memory (STM) and long-term memory (LTM) are mimicked by tuning the pulse gate voltage amplitude. The LTM process in such an artificial synapse is due to the proton-related interfacial electrochemical reaction. Our results are highly desirable for building future neuromorphic systems or even artificial networks via electronic elements. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr02987e

  7. Intelligent layered nanoflare: ``lab-on-a-nanoparticle'' for multiple DNA logic gate operations and efficient intracellular delivery

    NASA Astrophysics Data System (ADS)

    Yang, Bin; Zhang, Xiao-Bing; Kang, Li-Ping; Huang, Zhi-Mei; Shen, Guo-Li; Yu, Ru-Qin; Tan, Weihong

    2014-07-01

    DNA strand displacement cascades have been engineered to construct various fascinating DNA circuits. However, biological applications are limited by the insufficient cellular internalization of naked DNA structures, as well as the separated multicomponent feature. In this work, these problems are addressed by the development of a novel DNA nanodevice, termed intelligent layered nanoflare, which integrates DNA computing at the nanoscale, via the self-assembly of DNA flares on a single gold nanoparticle. As a ``lab-on-a-nanoparticle'', the intelligent layered nanoflare could be engineered to perform a variety of Boolean logic gate operations, including three basic logic gates, one three-input AND gate, and two complex logic operations, in a digital non-leaky way. In addition, the layered nanoflare can serve as a programmable strategy to sequentially tune the size of nanoparticles, as well as a new fingerprint spectrum technique for intelligent multiplex biosensing. More importantly, the nanoflare developed here can also act as a single entity for intracellular DNA logic gate delivery, without the need of commercial transfection agents or other auxiliary carriers. By incorporating DNA circuits on nanoparticles, the presented layered nanoflare will broaden the applications of DNA circuits in biological systems, and facilitate the development of DNA nanotechnology.DNA strand displacement cascades have been engineered to construct various fascinating DNA circuits. However, biological applications are limited by the insufficient cellular internalization of naked DNA structures, as well as the separated multicomponent feature. In this work, these problems are addressed by the development of a novel DNA nanodevice, termed intelligent layered nanoflare, which integrates DNA computing at the nanoscale, via the self-assembly of DNA flares on a single gold nanoparticle. As a ``lab-on-a-nanoparticle'', the intelligent layered nanoflare could be engineered to perform a variety of

  8. A hydrogel capsule as gate dielectric in flexible organic field-effect transistors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Dumitru, L. M.; Manoli, K.; Magliulo, M.

    2015-01-01

    A jellified alginate based capsule serves as biocompatible and biodegradable electrolyte system to gate an organic field-effect transistor fabricated on a flexible substrate. Such a system allows operating thiophene based polymer transistors below 0.5 V through an electrical double layer formed across an ion-permeable polymeric electrolyte. Moreover, biological macro-molecules such as glucose-oxidase and streptavidin can enter into the gating capsules that serve also as delivery system. An enzymatic bio-reaction is shown to take place in the capsule and preliminary results on the measurement of the electronic responses promise for low-cost, low-power, flexible electronic bio-sensing applications using capsule-gated organic field-effect transistors.

  9. Reduced distribution of threshold voltage shift in double layer NiSi2 nanocrystals for nano-floating gate memory applications.

    PubMed

    Choi, Sungjin; Lee, Junhyuk; Kim, Donghyoun; Oh, Seulki; Song, Wangyu; Choi, Seonjun; Choi, Eunsuk; Lee, Seung-Beck

    2011-12-01

    We report on the fabrication and capacitance-voltage characteristics of double layer nickel-silicide nanocrystals with Si3N4 interlayer tunnel barrier for nano-floating gate memory applications. Compared with devices using SiO2 interlayer, the use of Si3N4 interlayer separation reduced the average size (4 nm) and distribution (+/- 2.5 nm) of NiSi2 nanocrystal (NC) charge traps by more than 50% and giving a two fold increase in NC density to 2.3 x 10(12) cm(-2). The increased density and reduced NC size distribution resulted in a significantly decrease in the distribution of the device C-V characteristics. For each program voltage, the distribution of the shift in the threshold voltage was reduced by more than 50% on average to less than 0.7 V demonstrating possible multi-level-cell operation.

  10. Electrophoretic Separation of Single Particles Using Nanoscale Thermoplastic Columns.

    PubMed

    Weerakoon-Ratnayake, Kumuditha M; Uba, Franklin I; Oliver-Calixte, Nyoté J; Soper, Steven A

    2016-04-05

    Phenomena associated with microscale electrophoresis separations cannot, in many cases, be applied to the nanoscale. Thus, understanding the electrophoretic characteristics associated with the nanoscale will help formulate relevant strategies that can optimize the performance of separations carried out on columns with at least one dimension below 150 nm. Electric double layer (EDL) overlap, diffusion, and adsorption/desorption properties and/or dielectrophoretic effects giving rise to stick/slip motion are some of the processes that can play a role in determining the efficiency of nanoscale electrophoretic separations. We investigated the performance characteristics of electrophoretic separations carried out in nanoslits fabricated in poly(methyl methacrylate), PMMA, devices. Silver nanoparticles (AgNPs) were used as the model system with tracking of their transport via dark field microscopy and localized surface plasmon resonance. AgNPs capped with citrate groups and the negatively charged PMMA walls (induced by O2 plasma modification of the nanoslit walls) enabled separations that were not apparent when these particles were electrophoresed in microscale columns. The separation of AgNPs based on their size without the need for buffer additives using PMMA nanoslit devices is demonstrated herein. Operational parameters such as the electric field strength, nanoslit dimensions, and buffer composition were evaluated as to their effects on the electrophoretic performance, both in terms of efficiency (plate numbers) and resolution. Electrophoretic separations performed at high electric field strengths (>200 V/cm) resulted in higher plate numbers compared to lower fields due to the absence of stick/slip motion at the higher electric field strengths. Indeed, 60 nm AgNPs could be separated from 100 nm particles in free solution using nanoscale electrophoresis with 100 μm long columns.

  11. Monolithically integrated all-optical gate switch using intersubband transition in InGaAs/AlAsSb coupled double quantum wells.

    PubMed

    Akimoto, Ryoichi; Gozu, Shin-ichiro; Mozume, Teruo; Ishikawa, Hiroshi

    2011-07-04

    We have developed a compact all-optical gate switch with a footprint less than 1 mm2, in which an optical nonlinear waveguide using cross-phase-modulation associated with intersubband transition in InGaAs/AlGaAs/AlAsSb coupled double quantum wells and a Michelson interferometer (MI) are monolithically integrated on an InP chip. The MI configuration allows a transverse magnetic pump light direct access to an MI arm for phase modulation while passive photonic integrated circuits serve a transverse electric signal light. Full switching of the π-rad nonlinear phase shift is achieved with a pump pulse energy of 8.6 pJ at a 10-GHz repetition rate. We also demonstrate all-optical demultiplexing of a 160-Gb/s signal to a 40-Gb/s signal.

  12. Non-scaling behavior of electroosmotic flow in voltage-gated nanopores

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lian, Cheng; Gallegos, Alejandro; Liu, Honglai

    2017-01-01

    Ionic size effects and electrostatic correlations result in the non-monotonic dependence of the electrical conductivity on the pore size. For ion transport at a high gating voltage, the conductivity oscillates with the pore size due to a significant overlap of the electric double layers.

  13. Reversible logic gates based on enzyme-biocatalyzed reactions and realized in flow cells: a modular approach.

    PubMed

    Fratto, Brian E; Katz, Evgeny

    2015-05-18

    Reversible logic gates, such as the double Feynman gate, Toffoli gate and Peres gate, with 3-input/3-output channels are realized using reactions biocatalyzed with enzymes and performed in flow systems. The flow devices are constructed using a modular approach, where each flow cell is modified with one enzyme that biocatalyzes one chemical reaction. The multi-step processes mimicking the reversible logic gates are organized by combining the biocatalytic cells in different networks. This work emphasizes logical but not physical reversibility of the constructed systems. Their advantages and disadvantages are discussed and potential use in biosensing systems, rather than in computing devices, is suggested. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

    DOE PAGES

    Leng, X.; Bozovic, I.; Bollinger, A. T.

    2016-08-10

    Epitaxial indium tin oxide films have been grown on both LaAlO 3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers amore » pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.« less

  15. Mixing Acid Salts and Layered Double Hydroxides in Nanoscale under Solid Condition

    PubMed Central

    Nakayama, Hirokazu; Hayashi, Aki

    2014-01-01

    The immobilization of potassium sorbate, potassium aspartate and sorbic acid in layered double hydroxide under solid condition was examined. By simply mixing two solids, immobilization of sorbate and aspartate in the interlayer space of nitrate-type layered double hydroxide, so called intercalation reaction, was achieved, and the uptakes, that is, the amount of immobilized salts and the interlayer distances of intercalation compounds were almost the same as those obtained in aqueous solution. However, no intercalation was achieved for sorbic acid. Although intercalation of sorbate and aspartate into chloride-type layered double hydroxide was possible, the uptakes for these intercalation compounds were lower than those obtained using nitrate-type layered double hydroxide. The intercalation under solid condition could be achieved to the same extent as for ion-exchange reaction in aqueous solution, and the reactivity was similar to that observed in aqueous solution. This method will enable the encapsulation of acidic drug in layered double hydroxide as nano level simply by mixing both solids. PMID:25080007

  16. Mixing Acid Salts and Layered Double Hydroxides in Nanoscale under Solid Condition.

    PubMed

    Nakayama, Hirokazu; Hayashi, Aki

    2014-07-30

    The immobilization of potassium sorbate, potassium aspartate and sorbic acid in layered double hydroxide under solid condition was examined. By simply mixing two solids, immobilization of sorbate and aspartate in the interlayer space of nitrate-type layered double hydroxide, so called intercalation reaction, was achieved, and the uptakes, that is, the amount of immobilized salts and the interlayer distances of intercalation compounds were almost the same as those obtained in aqueous solution. However, no intercalation was achieved for sorbic acid. Although intercalation of sorbate and aspartate into chloride-type layered double hydroxide was possible, the uptakes for these intercalation compounds were lower than those obtained using nitrate-type layered double hydroxide. The intercalation under solid condition could be achieved to the same extent as for ion-exchange reaction in aqueous solution, and the reactivity was similar to that observed in aqueous solution. This method will enable the encapsulation of acidic drug in layered double hydroxide as nano level simply by mixing both solids.

  17. 49 CFR 234.255 - Gate arm and gate mechanism.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Gate arm and gate mechanism. 234.255 Section 234... Maintenance, Inspection, and Testing Inspections and Tests § 234.255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be...

  18. 49 CFR 234.255 - Gate arm and gate mechanism.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 4 2011-10-01 2011-10-01 false Gate arm and gate mechanism. 234.255 Section 234... Maintenance, Inspection, and Testing Inspections and Tests § 234.255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be...

  19. Polarized linewidth-controllable double-trapping electromagnetically induced transparency spectra in a resonant plasmon nanocavity

    PubMed Central

    Wang, Luojia; Gu, Ying; Chen, Hongyi; Zhang, Jia-Yu; Cui, Yiping; Gerardot, Brian D.; Gong, Qihuang

    2013-01-01

    Surface plasmons with ultrasmall optical mode volume and strong near field enhancement can be used to realize nanoscale light-matter interaction. Combining surface plasmons with the quantum system provides the possibility of nanoscale realization of important quantum optical phenomena, including the electromagnetically induced transparency (EIT), which has many applications in nonlinear quantum optics and quantum information processing. Here, using a custom-designed resonant plasmon nanocavity, we demonstrate polarized position-dependent linewidth-controllable EIT spectra at the nanoscale. We analytically obtain the double coherent population trapping conditions in a double-Λ quantum system with crossing damping, which give two transparent points in the EIT spectra. The linewidths of the three peaks are extremely sensitive to the level spacing of the excited states, the Rabi frequencies and detunings of pump fields, and the Purcell factors. In particular the linewidth of the central peak is exceptionally narrow. The hybrid system may have potential applications in ultra-compact plasmon-quantum devices. PMID:24096943

  20. VLSI Implementation of Fault Tolerance Multiplier based on Reversible Logic Gate

    NASA Astrophysics Data System (ADS)

    Ahmad, Nabihah; Hakimi Mokhtar, Ahmad; Othman, Nurmiza binti; Fhong Soon, Chin; Rahman, Ab Al Hadi Ab

    2017-08-01

    Multiplier is one of the essential component in the digital world such as in digital signal processing, microprocessor, quantum computing and widely used in arithmetic unit. Due to the complexity of the multiplier, tendency of errors are very high. This paper aimed to design a 2×2 bit Fault Tolerance Multiplier based on Reversible logic gate with low power consumption and high performance. This design have been implemented using 90nm Complemetary Metal Oxide Semiconductor (CMOS) technology in Synopsys Electronic Design Automation (EDA) Tools. Implementation of the multiplier architecture is by using the reversible logic gates. The fault tolerance multiplier used the combination of three reversible logic gate which are Double Feynman gate (F2G), New Fault Tolerance (NFT) gate and Islam Gate (IG) with the area of 160μm x 420.3μm (67.25 mm2). This design achieved a low power consumption of 122.85μW and propagation delay of 16.99ns. The fault tolerance multiplier proposed achieved a low power consumption and high performance which suitable for application of modern computing as it has a fault tolerance capabilities.

  1. 49 CFR 234.255 - Gate arm and gate mechanism.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 49 Transportation 4 2013-10-01 2013-10-01 false Gate arm and gate mechanism. 234.255 Section 234....255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be observed for proper operation at least once each month. (c...

  2. 49 CFR 234.255 - Gate arm and gate mechanism.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 49 Transportation 4 2014-10-01 2014-10-01 false Gate arm and gate mechanism. 234.255 Section 234....255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be observed for proper operation at least once each month. (c...

  3. 49 CFR 234.255 - Gate arm and gate mechanism.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 4 2012-10-01 2012-10-01 false Gate arm and gate mechanism. 234.255 Section 234....255 Gate arm and gate mechanism. (a) Each gate arm and gate mechanism shall be inspected at least once each month. (b) Gate arm movement shall be observed for proper operation at least once each month. (c...

  4. A chimeric prokaryotic pentameric ligand–gated channel reveals distinct pathways of activation

    DOE PAGES

    Schmandt, Nicolaus; Velisetty, Phanindra; Chalamalasetti, Sreevatsa V.; ...

    2015-09-28

    Recent high resolution structures of several pentameric ligand–gated ion channels have provided unprecedented details of their molecular architecture. However, the conformational dynamics and structural rearrangements that underlie gating and allosteric modulation remain poorly understood. We used a combination of electrophysiology, double electron–electron resonance (DEER) spectroscopy, and x-ray crystallography to investigate activation mechanisms in a novel functional chimera with the extracellular domain (ECD) of amine-gated Erwinia chrysanthemi ligand–gated ion channel, which is activated by primary amines, and the transmembrane domain of Gloeobacter violaceus ligand–gated ion channel, which is activated by protons. We found that the chimera was independently gated by primarymore » amines and by protons. The crystal structure of the chimera in its resting state, at pH 7.0 and in the absence of primary amines, revealed a closed-pore conformation and an ECD that is twisted with respect to the transmembrane region. Amine- and pH-induced conformational changes measured by DEER spectroscopy showed that the chimera exhibits a dual mode of gating that preserves the distinct conformational changes of the parent channels. Collectively, our findings shed light on both conserved and divergent features of gating mechanisms in this class of channels, and will facilitate the design of better allosteric modulators.« less

  5. A chimeric prokaryotic pentameric ligand–gated channel reveals distinct pathways of activation

    PubMed Central

    Schmandt, Nicolaus; Velisetty, Phanindra; Chalamalasetti, Sreevatsa V.; Stein, Richard A.; Bonner, Ross; Talley, Lauren; Parker, Mark D.; Mchaourab, Hassane S.; Yee, Vivien C.; Lodowski, David T.

    2015-01-01

    Recent high resolution structures of several pentameric ligand–gated ion channels have provided unprecedented details of their molecular architecture. However, the conformational dynamics and structural rearrangements that underlie gating and allosteric modulation remain poorly understood. We used a combination of electrophysiology, double electron–electron resonance (DEER) spectroscopy, and x-ray crystallography to investigate activation mechanisms in a novel functional chimera with the extracellular domain (ECD) of amine-gated Erwinia chrysanthemi ligand–gated ion channel, which is activated by primary amines, and the transmembrane domain of Gloeobacter violaceus ligand–gated ion channel, which is activated by protons. We found that the chimera was independently gated by primary amines and by protons. The crystal structure of the chimera in its resting state, at pH 7.0 and in the absence of primary amines, revealed a closed-pore conformation and an ECD that is twisted with respect to the transmembrane region. Amine- and pH-induced conformational changes measured by DEER spectroscopy showed that the chimera exhibits a dual mode of gating that preserves the distinct conformational changes of the parent channels. Collectively, our findings shed light on both conserved and divergent features of gating mechanisms in this class of channels, and will facilitate the design of better allosteric modulators. PMID:26415570

  6. Gate-Sensing the Potential Landscape of a GaAs Two-Dimensional Electron Gas

    NASA Astrophysics Data System (ADS)

    Croot, Xanthe; Mahoney, Alice; Pauka, Sebastian; Colless, James; Reilly, David; Watson, John; Fallahi, Saeed; Gardner, Geoff; Manfra, Michael; Lu, Hong; Gossard, Arthur

    In situ dispersive gate sensors hold potential as a means of enabling the scalable readout of quantum dot arrays. Sensitive to quantum capacitance, dispersive sensors have been used to detect inter- and intra-dot transitions in GaAs double quantum dots, and can distinguish the spin states of singlet triplet qubits. In addition, the gate-sensing technique is likely of value in probing the physics of Majorana zero modes in nanowire devices. Beyond the readout signatures associated with charge and spin configurations of qubits, gate-sensing is sensitive to trapped charge in the potential landscape. Here, we report gate-sensing signals arising from tunnelling of electrons between puddles of trapped charge in a GaAs 2DEG. We examine these signals in a family of different devices with varying mobilities, and as a function of temperature and bias. Implications for qubit readout using the gate-sensing technique are discussed.

  7. 2-D Modeling of Nanoscale MOSFETs: Non-Equilibrium Green's Function Approach

    NASA Technical Reports Server (NTRS)

    Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan

    2001-01-01

    We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Electron-electron interaction is treated within Hartree approximation by solving NEGF and Poisson equations self-consistently. For the calculations presented here, parallelization is performed by distributing the solution of NEGF equations to various processors, energy wise. We present simulation of the "benchmark" MIT 25nm and 90nm MOSFETs and compare our results to those from the drift-diffusion simulator and the quantum-corrected results available. In the 25nm MOSFET, the channel length is less than ten times the electron wavelength, and the electron scattering time is comparable to its transit time. Our main results are: (1) Simulated drain subthreshold current characteristics are shown, where the potential profiles are calculated self-consistently by the corresponding simulation methods. The current predicted by our quantum simulation has smaller subthreshold slope of the Vg dependence which results in higher threshold voltage. (2) When gate oxide thickness is less than 2 nm, gate oxide leakage is a primary factor which determines off-current of a MOSFET (3) Using our 2-D NEGF simulator, we found several ways to drastically decrease oxide leakage current without compromising drive current. (4) Quantum mechanically calculated electron density is much smaller than the background doping density in the poly silicon gate region near oxide interface. This creates an additional effective gate voltage. Different ways to. include this effect approximately will be discussed.

  8. Non-scaling behavior of electroosmotic flow in voltage-gated nanopores

    DOE PAGES

    Lian, Cheng; Gallegos, Alejandro; Liu, Honglai; ...

    2016-11-17

    Ionic transport through nanopores is of fundamental importance for the design and development of nanofiltration membranes and novel electrochemical devices including supercapacitors, fuel cells and batteries. Recent experiments have shown an unusual variation of electrical conductance with the pore size and the electrolyte parameters that defies conventional scaling relations. Here ionic transport through voltage-gated nanopores was studied by using the classical density functional theory for ion distributions in combination with the Navier–Stokes equation for the electroosmotic flow. We also identified a significant influence of the gating potential on the scaling behavior of the conductance with changes in the pore sizemore » and the salt concentration. Finally, for ion transport in narrow pores with a high gating voltage, the conductivity shows an oscillatory dependence on the pore size owing to the strong overlap of electric double layers.« less

  9. Electrostatics at the nanoscale.

    PubMed

    Walker, David A; Kowalczyk, Bartlomiej; de la Cruz, Monica Olvera; Grzybowski, Bartosz A

    2011-04-01

    Electrostatic forces are amongst the most versatile interactions to mediate the assembly of nanostructured materials. Depending on experimental conditions, these forces can be long- or short-ranged, can be either attractive or repulsive, and their directionality can be controlled by the shapes of the charged nano-objects. This Review is intended to serve as a primer for experimentalists curious about the fundamentals of nanoscale electrostatics and for theorists wishing to learn about recent experimental advances in the field. Accordingly, the first portion introduces the theoretical models of electrostatic double layers and derives electrostatic interaction potentials applicable to particles of different sizes and/or shapes and under different experimental conditions. This discussion is followed by the review of the key experimental systems in which electrostatic interactions are operative. Examples include electroactive and "switchable" nanoparticles, mixtures of charged nanoparticles, nanoparticle chains, sheets, coatings, crystals, and crystals-within-crystals. Applications of these and other structures in chemical sensing and amplification are also illustrated.

  10. Counterfactual distributed controlled-phase gate for quantum-dot spin qubits in double-sided optical microcavities

    NASA Astrophysics Data System (ADS)

    Guo, Qi; Cheng, Liu-Yong; Chen, Li; Wang, Hong-Fu; Zhang, Shou

    2014-10-01

    The existing distributed quantum gates required physical particles to be transmitted between two distant nodes in the quantum network. We here demonstrate the possibility to implement distributed quantum computation without transmitting any particles. We propose a scheme for a distributed controlled-phase gate between two distant quantum-dot electron-spin qubits in optical microcavities. The two quantum-dot-microcavity systems are linked by a nested Michelson-type interferometer. A single photon acting as ancillary resource is sent in the interferometer to complete the distributed controlled-phase gate, but it never enters the transmission channel between the two nodes. Moreover, we numerically analyze the effect of experimental imperfections and show that the present scheme can be implemented with high fidelity in the ideal asymptotic limit. The scheme provides further evidence of quantum counterfactuality and opens promising possibilities for distributed quantum computation.

  11. Undoped Si/SiGe Depletion-Mode Few-Electron Double Quantum Dots

    NASA Astrophysics Data System (ADS)

    Borselli, Matthew; Huang, Biqin; Ross, Richard; Croke, Edward; Holabird, Kevin; Hazard, Thomas; Watson, Christopher; Kiselev, Andrey; Deelman, Peter; Alvarado-Rodriguez, Ivan; Schmitz, Adele; Sokolich, Marko; Gyure, Mark; Hunter, Andrew

    2011-03-01

    We have successfully formed a double quantum dot in the sSi/SiGe material system without need for intentional dopants. In our design, a two-dimensional electron gas is formed in a strained silicon well by forward biasing a global gate. Lateral definition of quantum dots is established with reverse-biased gates with ~ 40 nm critical dimensions. Low-temperature capacitance and Hall measurements confirm electrons are confined in the Si-well with mobilities > 10 4 cm 2 / V - s . Further characterization identifies practical gate bias limits for this design and will be compared to simulation. Several double dot devices have been brought into the few-electron Coulomb blockade regime as measured by through-dot transport. Honeycomb diagrams and nonlinear through-dot transport measurements are used to quantify dot capacitances and addition energies of several meV. Sponsored by United States Department of Defense. Approved for Public Release, Distribution Unlimited.

  12. Multiple and configurable optical logic systems based on layered double hydroxides and chromophore assemblies.

    PubMed

    Shi, Wenying; Fu, Yi; Li, Zhixiong; Wei, Min

    2015-01-14

    Multiple and configurable fluorescence logic gates were fabricated via self-assembly of layered double hydroxides and various chromophores. These logic gates were operated by observation of different emissions with the same excitation wavelength, which achieve YES, NOT, AND, INH and INHIBIT logic operations, respectively.

  13. Rocket Science at the Nanoscale.

    PubMed

    Li, Jinxing; Rozen, Isaac; Wang, Joseph

    2016-06-28

    Autonomous propulsion at the nanoscale represents one of the most challenging and demanding goals in nanotechnology. Over the past decade, numerous important advances in nanotechnology and material science have contributed to the creation of powerful self-propelled micro/nanomotors. In particular, micro- and nanoscale rockets (MNRs) offer impressive capabilities, including remarkable speeds, large cargo-towing forces, precise motion controls, and dynamic self-assembly, which have paved the way for designing multifunctional and intelligent nanoscale machines. These multipurpose nanoscale shuttles can propel and function in complex real-life media, actively transporting and releasing therapeutic payloads and remediation agents for diverse biomedical and environmental applications. This review discusses the challenges of designing efficient MNRs and presents an overview of their propulsion behavior, fabrication methods, potential rocket fuels, navigation strategies, practical applications, and the future prospects of rocket science and technology at the nanoscale.

  14. Performance analysis of junctionless double gate VeSFET considering the effects of thermal variation - An explicit 2D analytical model

    NASA Astrophysics Data System (ADS)

    Chaudhary, Tarun; Khanna, Gargi

    2017-03-01

    The purpose of this paper is to explore junctionless double gate vertical slit field effect transistor (JLDG VeSFET) with reduced short channel effects and to develop an analytical threshold voltage model for the device considering the impact of thermal variations for the very first time. The model has been derived by solving 2D Poisson's equation and the effects of variation in temperature on various electrical parameters of the device such as Rout, drain current, mobility, subthreshold slope and DIBL has been studied and described in the paper. The model provides a deep physical insight of the device behavior and is also very helpful in contributing to the design space exploration for JLDG VeSFET. The proposed model is verified with simulative analysis at different radii of the device and it has been observed that there is a good agreement between the analytical model and simulation results.

  15. Local gate control in carbon nanotube quantum devices

    NASA Astrophysics Data System (ADS)

    Biercuk, Michael Jordan

    This thesis presents transport measurements of carbon nanotube electronic devices operated in the quantum regime. Nanotubes are contacted by source and drain electrodes, and multiple lithographically-patterned electrostatic gates are aligned to each device. Transport measurements of device conductance or current as a function of local gate voltages reveal that local gates couple primarily to the proximal section of the nanotube, hence providing spatially localized control over carrier density along the nanotube length. Further, using several different techniques we are able to produce local depletion regions along the length of a tube. This phenomenon is explored in detail for different contact metals to the nanotube. We utilize local gating techniques to study multiple quantum dots in carbon nanotubes produced both by naturally occurring defects, and by the controlled application of voltages to depletion gates. We study double quantum dots in detail, where transport measurements reveal honeycomb charge stability diagrams. We extract values of energy-level spacings, capacitances, and interaction energies for this system, and demonstrate independent control over all relevant tunneling rates. We report rf-reflectometry measurements of gate-defined carbon nanotube quantum dots with integrated charge sensors. Aluminum rf-SETs are electrostatically coupled to carbon nanotube devices and detect single electron charging phenomena in the Coulomb blockade regime. Simultaneous correlated measurements of single electron charging are made using reflected rf power from the nanotube itself and from the rf-SET on microsecond time scales. We map charge stability diagrams for the nanotube quantum dot via charge sensing, observing Coulomb charging diamonds beyond the first order. Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately 1e2/h, the quantum of conductance for a single

  16. TU-E-BRB-08: Dual Gated Volumetric Modulated Arc Therapy.

    PubMed

    Wu, J; Fahimian, B; Wu, H; Xing, L

    2012-06-01

    Gated Volumetric Modulated Arc Therapy (VMAT) is an emerging treatment modality for Stereotactic Body Radiotherapy (SBRT). However, gating significantly prolongs treatment time. In order to enhance treatment efficiency, a novel dual gated VMAT, in which dynamic arc deliveries are executed sequentially in alternating exhale and inhale phases, is proposed and evaluated experimentally. The essence of dual gated VMAT is to take advantage of the natural pauses that occur at inspiration and exhalation by alternatively delivering the dose at the two phases, instead of the exhale window only. The arc deliveries at the two phases are realized by rotating gantry forward at the exhale window and backward at the inhale in an alternative fashion. Custom XML scripts were developed in Varian's TrueBeam STx Developer Mode to enable dual gated VMAT delivery. RapidArc plans for a lung case were generated for both inhale and exhale phases. The two plans were then combined into a dual gated arc by interleaving the arc treatment nodes of the two RapidArc plans. The dual gated plan was delivered in the development mode of TrueBeam LINAC onto a motion phantom and the delivery was measured by using pinpoint chamber/film/diode array (delta 4). The measured dose distribution was compared with that computed using Eclipse AAA algorithm. The treatment delivery time was recorded and compared with the corresponding single gated plans. Relative to the corresponding single gated delivery, it was found that treatment time efficiency was improved by 95.5% for the case studied here. Pinpoint chamber absolute dose measurement agreed the calculation to within 0.7%. Diode chamber array measurements revealed that 97.5% of measurement points of dual gated RapidArc delivery passed the 3% and 3mm gamma-test criterion. A dual gated VMAT treatment has been developed and implemented successfully with nearly doubled treatment delivery efficiency. © 2012 American Association of Physicists in Medicine.

  17. Water-gel for gating graphene transistors.

    PubMed

    Kim, Beom Joon; Um, Soong Ho; Song, Woo Chul; Kim, Yong Ho; Kang, Moon Sung; Cho, Jeong Ho

    2014-05-14

    Water, the primary electrolyte in biology, attracts significant interest as an electrolyte-type dielectric material for transistors compatible with biological systems. Unfortunately, the fluidic nature and low ionic conductivity of water prevents its practical usage in such applications. Here, we describe the development of a solid state, megahertz-operating, water-based gate dielectric system for operating graphene transistors. The new electrolyte systems were prepared by dissolving metal-substituted DNA polyelectrolytes into water. The addition of these biocompatible polyelectrolytes induced hydrogelation to provide solid-state integrity to the system. They also enhanced the ionic conductivities of the electrolytes, which in turn led to the quick formation of an electric double layer at the graphene/electrolyte interface that is beneficial for modulating currents in graphene transistors at high frequencies. At the optimized conditions, the Na-DNA water-gel-gated flexible transistors and inverters were operated at frequencies above 1 MHz and 100 kHz, respectively.

  18. Highly flexible SRAM cells based on novel tri-independent-gate FinFET

    NASA Astrophysics Data System (ADS)

    Liu, Chengsheng; Zheng, Fanglin; Sun, Yabin; Li, Xiaojin; Shi, Yanling

    2017-10-01

    In this paper, a novel tri-independent-gate (TIG) FinFET is proposed for highly flexible SRAM cells design. To mitigate the read-write conflict, two kinds of SRAM cells based on TIG FinFETs are designed, and high tradeoff are obtained between read stability and speed. Both cells can offer multi read operations for frequency requirement with single voltage supply. In the first TIG FinFET SRAM cell, the strength of single-fin access transistor (TIG FinFET) can be flexibly adjusted by selecting five different modes to meet the needs of dynamic frequency design. Compared to the previous double-independent-gate (DIG) FinFET SRAM cell, 12.16% shorter read delay can be achieved with only 1.62% read stability decrement. As for the second TIG FinFET SRAM cell, pass-gate feedback technology is applied and double-fin TIG FinFETs are used as access transistors to solve the severe write-ability degradation. Three modes exist to flexibly adjust read speed and stability, and 68.2% larger write margin and 51.7% shorter write delay are achieved at only the expense of 26.2% increase in leakage power, with the same layout area as conventional FinFET SRAM cell.

  19. Nanoscale Ionic Liquids

    DTIC Science & Technology

    2006-11-01

    Technical Report 11 December 2005 - 30 November 2006 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Nanoscale Ionic Liquids 5b. GRANT NUMBER FA9550-06-1-0012...Title: Nanoscale Ionic Liquids Principal Investigator: Emmanuel P. Giannelis Address: Materials Science and Engineering, Bard Hall, Cornell University...based fluids exhibit high ionic conductivity. The NFs are typically synthesized by grafting a charged, oligomeric corona onto the nanoparticle cores

  20. Onset of Spin Polarization in Four-Gate Quantum Point Contacts

    NASA Astrophysics Data System (ADS)

    Jones, Alex

    A series of simulations which utilize a Non-equilibrium Green's function (NEGF) formalism is suggested which can provide indirect evidence of the fine and non-local electrostatic tuning of the onset of spin polarization in two closely spaced quantum point contacts (QPCs) that experience a phenomenon known as lateral spin-orbit coupling (LSOC). Each of the QPCs that create the device also has its own pair of side gates (SGs) which are in-plane with the device channel. Numerical simulations of the conductance of the two closely spaced QPCs or four-gate QPC are carried out for different biasing conditions applied to two leftmost and rightmost SGs. Conductance plots are then calculated as a function of the variable, Vsweep, which is the common sweep voltage applied to the QPC. When Vsweep is only applied to two of the four side gates, the plots show several conductance anomalies, i.e., below G0 = 2e2/h, characterized by intrinsic bistability, i.e., hysteresis loops due to a difference in the conductance curves for forward and reverse common voltage sweep simulations. The appearance of hysteresis loops is attributed to the co-existence of multistable spin textures in the narrow channel of the four-gate QPC. The shape, location, and number of hysteresis loops are very sensitive to the biasing conditions on the four SGs. The shape and size of the conductance anomalies and hysteresis loops are shown to change when the biasing conditions on the leftmost and rightmost SGs are swapped, a rectifying behavior providing an additional indirect evidence for the onset of spontaneous spin polarization in nanoscale devices made of QPCs. The results of the simulations reveal that the occurrence and fine tuning of conductance anomalies in QPC structures are highly sensitive to the non-local action of closely spaced SGs. It is therefore imperative to take into account this proximity effect in the design of all electrical spin valves making use of middle gates to fine tune the spin

  1. Intelligent layered nanoflare: "lab-on-a-nanoparticle" for multiple DNA logic gate operations and efficient intracellular delivery.

    PubMed

    Yang, Bin; Zhang, Xiao-Bing; Kang, Li-Ping; Huang, Zhi-Mei; Shen, Guo-Li; Yu, Ru-Qin; Tan, Weihong

    2014-08-07

    DNA strand displacement cascades have been engineered to construct various fascinating DNA circuits. However, biological applications are limited by the insufficient cellular internalization of naked DNA structures, as well as the separated multicomponent feature. In this work, these problems are addressed by the development of a novel DNA nanodevice, termed intelligent layered nanoflare, which integrates DNA computing at the nanoscale, via the self-assembly of DNA flares on a single gold nanoparticle. As a "lab-on-a-nanoparticle", the intelligent layered nanoflare could be engineered to perform a variety of Boolean logic gate operations, including three basic logic gates, one three-input AND gate, and two complex logic operations, in a digital non-leaky way. In addition, the layered nanoflare can serve as a programmable strategy to sequentially tune the size of nanoparticles, as well as a new fingerprint spectrum technique for intelligent multiplex biosensing. More importantly, the nanoflare developed here can also act as a single entity for intracellular DNA logic gate delivery, without the need of commercial transfection agents or other auxiliary carriers. By incorporating DNA circuits on nanoparticles, the presented layered nanoflare will broaden the applications of DNA circuits in biological systems, and facilitate the development of DNA nanotechnology.

  2. Interplay of Nanoscale, Hybrid P3HT/ZTO Interface on Optoelectronics and Photovoltaic Cells.

    PubMed

    Lai, Jian-Jhong; Li, Yu-Hsun; Feng, Bo-Rui; Tang, Shiow-Jing; Jian, Wen-Bin; Fu, Chuan-Min; Chen, Jiun-Tai; Wang, Xu; Lee, Pooi See

    2017-09-27

    Photovoltaic effects in poly(3-hexylthiophene-2,5-diyl) (P3HT) have attracted much attention recently. Here, natively p-type doped P3HT nanofibers and n-type doped zinc tin oxide (ZTO) nanowires are used for making not only field-effect transistors (FETs) but also p-n nanoscale diodes. The hybrid P3HT/ZTO p-n heterojunction shows applications in many directions, and it also facilitates the investigation of photoelectrons and photovoltaic effects on the nanoscale. As for applications, the heterojunction device shows a simultaneously high on/off ratio of n- and p-type FETs, gatable p-n junction diodes, tristate buffer devices, gatable photodetectors, and gatable solar cells. On the other hand, P3HT nanofibers are taken as a photoactive layer and the role played by the p-n heterojunction in the photoelectric and photovoltaic effects is investigated. It is found that the hybrid P3HT/ZTO p-n heterojunction assists in increasing photocurrents and enhancing photovoltaic effects. Through the controllable gating of the heterojunction, we can discuss the background mechanisms of photocurrent generation and photovoltaic energy harvesting.

  3. Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

    NASA Astrophysics Data System (ADS)

    Shin, Yong Hyeon; Bae, Min Soo; Park, Chuntaek; Park, Joung Won; Park, Hyunwoo; Lee, Yong Ju; Yun, Ilgu

    2018-06-01

    A universal core model for multiple-gate (MG) field-effect transistors (FETs) with short channel effects (SCEs) and quantum mechanical effects (QMEs) is proposed. By using a Young’s approximation based solution for one-dimensional Poisson’s equations the total inversion charge density (Q inv ) in the channel is modeled for double-gate (DG) and surrounding-gate SG (SG) FETs, following which a universal charge model is derived based on the similarity of the solutions, including for quadruple-gate (QG) FETs. For triple-gate (TG) FETs, the average of DG and QG FETs are used. A SCEs model is also proposed considering the potential difference between the channel’s surface and center. Finally, a QMEs model for MG FETs is developed using the quantum correction compact model. The proposed universal core model is validated on commercially available three-dimensional ATLAS numerical simulations.

  4. Friction laws at the nanoscale.

    PubMed

    Mo, Yifei; Turner, Kevin T; Szlufarska, Izabela

    2009-02-26

    Macroscopic laws of friction do not generally apply to nanoscale contacts. Although continuum mechanics models have been predicted to break down at the nanoscale, they continue to be applied for lack of a better theory. An understanding of how friction force depends on applied load and contact area at these scales is essential for the design of miniaturized devices with optimal mechanical performance. Here we use large-scale molecular dynamics simulations with realistic force fields to establish friction laws in dry nanoscale contacts. We show that friction force depends linearly on the number of atoms that chemically interact across the contact. By defining the contact area as being proportional to this number of interacting atoms, we show that the macroscopically observed linear relationship between friction force and contact area can be extended to the nanoscale. Our model predicts that as the adhesion between the contacting surfaces is reduced, a transition takes place from nonlinear to linear dependence of friction force on load. This transition is consistent with the results of several nanoscale friction experiments. We demonstrate that the breakdown of continuum mechanics can be understood as a result of the rough (multi-asperity) nature of the contact, and show that roughness theories of friction can be applied at the nanoscale.

  5. Improving pH sensitivity by field-induced charge regulation in flexible biopolymer electrolyte gated oxide transistors

    NASA Astrophysics Data System (ADS)

    Liu, Ning; Gan, Lu; Liu, Yu; Gui, Weijun; Li, Wei; Zhang, Xiaohang

    2017-10-01

    Electrical manipulation of charged ions in electrolyte-gated transistors is crucial for enhancing the electric-double-layer (EDL) gating effect, thereby improving their sensing abilities. Here, indium-zinc-oxide (IZO) based thin-film-transistors (TFTs) are fabricated on flexible plastic substrate. Acid doped chitosan-based biopolymer electrolyte is used as the gate dielectric, exhibiting an extremely high EDL capacitance. By regulating the dynamic EDL charging process with special gate potential profiles, the EDL gating effect of the chitosan-gated TFT is enhanced, and then resulting in higher pH sensitivities. An extremely high sensitivity of ∼57.8 mV/pH close to Nernst limit is achieved when the gate bias of the TFT sensor sweeps at a rate of 10 mV/s. Additionally, an enhanced sensitivity of 2630% in terms of current variation with pH range from 11 to 3 is realized when the device is operated in the ion depletion mode with a negative gate bias of -0.7 V. Robust ionic modulation is demonstrated in such chitosan-gated sensors. Efficiently driving the charged ions in the chitosan-gated IZO-TFT provides a new route for ultrasensitive, low voltage, and low-cost biochemical sensing technologies.

  6. Enhanced sequestration of Cr(VI) by nanoscale zero-valent iron supported on layered double hydroxide by batch and XAFS study.

    PubMed

    Sheng, Guodong; Hu, Jun; Li, Hui; Li, Jiaxing; Huang, Yuying

    2016-04-01

    Herein, the reduction of nanoscale zero-valent iron (NZVI) and adsorption of layered double hydroxides (LDH) to sequester Cr(VI) were well combined by the immobilization of NZVI onto LDH surface (NZVI/LDH). The characterization results revealed that LDH decreased NZVI aggregation and thus increased Cr(VI) sequestration. The batch results indicated that Cr(VI) sequestration by NZVI/LDH was higher than that of NZVI, and superior to the sum of reduction and adsorption. The LDH with good anion exchange property allowed the adsorption of Cr(VI), facilitating interfacial reaction by increasing the local concentration of Cr(VI) in the NZVI vicinity. X-ray absorption near edge structure (XANES) results indicated that Cr(VI) was almost completely reduced to Cr(III) by NZVI/LDH, but Cr(VI) was partly reduced to Cr(III) by NZVI with a trace of Cr(VI) adsorbed on corrosion products. The coordination environment of Cr from extended X-ray absorption fine structure (EXAFS) analysis revealed that LDH could be a good scavenger for the insoluble products produced during reaction. So, the insoluble products on NZVI could be reduced, and its reactivity could be maintained. These results demonstrated that NZVI/LDH exhibits multiple functionalities relevant to the remediation of Cr(VI)-contaminated sites. Copyright © 2016 Elsevier Ltd. All rights reserved.

  7. Junctionless Thin-Film Transistors Gated by an H₃PO₄-Incorporated Chitosan Proton Conductor.

    PubMed

    Liu, Huixuan; Xun, Damao

    2018-04-01

    We fabricated an H3PO4-incorporated chitosan proton conductor film that exhibited the electric double layer effect and showed a high specific capacitance of 4.42 μF/cm2. Transparent indium tin oxide thin-film transistors gated by H3PO4-incorporated chitosan films were fabricated by sputtering through a shadow mask. The operating voltage was as low as 1.2 V because of the high specific capacitance of the H3PO4-incorporated chitosan dielectrics. The junctionless transparent indium tin oxide thin film transistors exhibited good performance, including an estimated current on/off ratio and field-effect mobility of 1.2 × 106 and 6.63 cm2V-1s-1, respectively. These low-voltage thin-film electric-double-layer transistors gated by H3PO4-incorporated chitosan are promising for next generation battery-powered "see-through" portable sensors.

  8. Design and optimization analysis of dual material gate on DG-IMOS

    NASA Astrophysics Data System (ADS)

    Singh, Sarabdeep; Raman, Ashish; Kumar, Naveen

    2017-12-01

    An impact ionization MOSFET (IMOS) is evolved for overcoming the constraint of less than 60 mV/decade sub-threshold slope (SS) of conventional MOSFET at room temperature. In this work, first, the device performance of the p-type double gate impact ionization MOSFET (DG-IMOS) is optimized by adjusting the device design parameters. The adjusted parameters are ratio of gate and intrinsic length, gate dielectric thickness and gate work function. Secondly, the DMG (dual material gate) DG-IMOS is proposed and investigated. This DMG DG-IMOS is further optimized to obtain the best possible performance parameters. Simulation results reveal that DMG DG-IMOS when compared to DG-IMOS, shows better I ON, I ON/I OFF ratio, and RF parameters. Results show that by properly tuning the lengths of two materials at a ratio of 1.5 in DMG DG-IMOS, optimized performance is achieved including I ON/I OFF ratio of 2.87 × 109 A/μm with I ON as 11.87 × 10-4 A/μm and transconductance of 1.06 × 10-3 S/μm. It is analyzed that length of drain side material should be greater than the length of source side material to attain the higher transconductance in DMG DG-IMOS.

  9. Hetero-Material Gate Doping-Less Tunnel FET and Its Misalignment Effects on Analog/RF Parameters

    NASA Astrophysics Data System (ADS)

    Anand, Sunny; Sarin, R. K.

    2018-03-01

    In this paper, with the use of a hetero-material gate technique, a tunnel field-effect transistor (TFET) subject to charge plasma technique is proposed, named as hetero-material gate doping-less tunnel FET (HMG-DLTFET) and a brief study has been done on the effects due to misalignment of the bottom gate towards drain (GMAD) and towards source (GMAS). The proposed devices provide better performance as the drive current increased by three times as compared to conventional doping-less TFET (DLTFET). The results are then analyzed and compared with conventional doped hetero-material gate double-gate tunnel FET (HMG-DGTFET). The analog/radiofrequency (RF) performance has been studied for both devices and comparative analysis has been done for different parameters such as drain current (I D), transconductance (g m), output conductance (g d), total gate capacitance (C gg) and cutoff frequency (f T). Both devices performed similarly in different misalignment configurations. When the bottom gate is perfectly aligned, the best performance is observed for both devices, but the doping-less device gives slightly more freedom for fabrication engineers as the amount of tolerance for HMG-DLTFET is better than that of HMG-DGTFET.

  10. Nanoscale volume confinement and fluorescence enhancement with double nanohole aperture

    PubMed Central

    Regmi, Raju; Al Balushi, Ahmed A.; Rigneault, Hervé; Gordon, Reuven; Wenger, Jérôme

    2015-01-01

    Diffraction ultimately limits the fluorescence collected from a single molecule, and sets an upper limit to the maximum concentration to isolate a single molecule in the detection volume. To overcome these limitations, we introduce here the use of a double nanohole structure with 25 nm gap, and report enhanced detection of single fluorescent molecules in concentrated solutions exceeding 20 micromolar. The nanometer gap concentrates the light into an apex volume down to 70 zeptoliter (10−21 L), 7000-fold below the diffraction-limited confocal volume. Using fluorescence correlation spectroscopy and time-correlated photon counting, we measure fluorescence enhancement up to 100-fold, together with local density of optical states (LDOS) enhancement of 30-fold. The distinctive features of double nanoholes combining high local field enhancement, efficient background screening and relative nanofabrication simplicity offer new strategies for real time investigation of biochemical events with single molecule resolution at high concentrations. PMID:26511149

  11. Nanoscale interfacial mixing of Au/Bi layers using MeV ion beams

    NASA Astrophysics Data System (ADS)

    Prusty, Sudakshina; Siva, V.; Ojha, S.; Kabiraj, D.; Sahoo, P. K.

    2017-05-01

    We have studied nanoscale mixing of thermally deposited double bilayer films of Au/Bi after irradiating them by 1.5 MeV Au2+ ions. Post irradiation effects on the morphology and elemental identification in these films are studied by Scanning electron microscopy (SEM) and Energy dispersive X-ray spectroscopy (EDS). Glancing angle X-ray diffraction (GAXRD) of the samples indicate marginal changes in the irradiated samples due to combined effect of nuclear and electronic energy loss. The interfacial mixing is studied by Rutherford backscattering (RBS).

  12. Mechanical writing of n-type conductive layers on the SrTiO3 surface in nanoscale

    PubMed Central

    Wang, Yuhang; Zhao, Kehan; Shi, Xiaolan; Li, Geng; Xie, Guanlin; Lai, Xubo; Ni, Jun; Zhang, Liuwan

    2015-01-01

    The fabrication and control of the conductive surface and interface on insulating SrTiO3 bulk provide a pathway for oxide electronics. The controllable manipulation of local doping concentration in semiconductors is an important step for nano-electronics. Here we show that conductive patterns can be written on bare SrTiO3 surface by controllable doping in nanoscale using the mechanical interactions of atomic force microscopy tip without applying external electric field. The conductivity of the layer is n-type, oxygen sensitive, and can be effectively tuned by the gate voltage. Hence, our findings have potential applications in oxide nano-circuits and oxygen sensors. PMID:26042679

  13. Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

    PubMed Central

    Sun, Yi-Lin; Xie, Dan; Xu, Jian-Long; Zhang, Cheng; Dai, Rui-Xuan; Li, Xian; Meng, Xiang-Jian; Zhu, Hong-Wei

    2016-01-01

    Double-gated field effect transistors have been fabricated using the SWCNT networks as channel layer and the organic ferroelectric P(VDF-TrFE) film spin-coated as top gate insulators. Standard photolithography process has been adopted to achieve the patterning of organic P(VDF-TrFE) films and top-gate electrodes, which is compatible with conventional CMOS process technology. An effective way for modulating the threshold voltage in the channel of P(VDF-TrFE) top-gate transistors under polarization has been reported. The introduction of functional P(VDF-TrFE) gate dielectric also provides us an alternative method to suppress the initial hysteresis of SWCNT networks and obtain a controllable ferroelectric hysteresis behavior. Applied bottom gate voltage has been found to be another effective way to highly control the threshold voltage of the networked SWCNTs based FETs by electrostatic doping effect. PMID:26980284

  14. An evaluation method for nanoscale wrinkle

    NASA Astrophysics Data System (ADS)

    Liu, Y. P.; Wang, C. G.; Zhang, L. M.; Tan, H. F.

    2016-06-01

    In this paper, a spectrum-based wrinkling analysis method via two-dimensional Fourier transformation is proposed aiming to solve the difficulty of nanoscale wrinkle evaluation. It evaluates the wrinkle characteristics including wrinkling wavelength and direction simply using a single wrinkling image. Based on this method, the evaluation results of nanoscale wrinkle characteristics show agreement with the open experimental results within an error of 6%. It is also verified to be appropriate for the macro wrinkle evaluation without scale limitations. The spectrum-based wrinkling analysis is an effective method for nanoscale evaluation, which contributes to reveal the mechanism of nanoscale wrinkling.

  15. Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p-n heterojunctions.

    PubMed

    Wang, Cong; Yang, Shengxue; Xiong, Wenqi; Xia, Congxin; Cai, Hui; Chen, Bin; Wang, Xiaoting; Zhang, Xinzheng; Wei, Zhongming; Tongay, Sefaattin; Li, Jingbo; Liu, Qian

    2016-10-12

    Vertically stacked van der Waals (vdW) heterojunctions of two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted a great deal of attention due to their fascinating properties. In this work, we report two important gate-tunable phenomena in new artificial vdW p-n heterojunctions created by vertically stacking p-type multilayer ReSe 2 and n-type multilayer WS 2 : (1) well-defined strong gate-tunable diode-like current rectification across the p-n interface is observed, and the tunability of the electronic processes is attributed to the tunneling-assisted interlayer recombination induced by majority carriers across the vdW interface; (2) the distinct ambipolar behavior under gate voltage modulation both at forward and reverse bias voltages is found in the vdW ReSe 2 /WS 2 heterojunction transistors and a corresponding transport model is proposed for the tunable polarity behaviors. The findings may provide some new opportunities for building nanoscale electronic and optoelectronic devices.

  16. Catheter-based time-gated near-infrared fluorescence/OCT imaging system

    NASA Astrophysics Data System (ADS)

    Lu, Yuankang; Abran, Maxime; Cloutier, Guy; Lesage, Frédéric

    2018-02-01

    We developed a new dual-modality intravascular imaging system based on fast time-gated fluorescence intensity imaging and spectral domain optical coherence tomography (SD-OCT) for the purpose of interventional detection of atherosclerosis. A pulsed supercontinuum laser was used for fluorescence and OCT imaging. A double-clad fiber (DCF)- based side-firing catheter was designed and fabricated to have a 23 μm spot size at a 2.2 mm working distance for OCT imaging. Its single-mode core is used for OCT, while its inner cladding transports fluorescence excitation light and collects fluorescent photons. The combination of OCT and fluorescence imaging was achieved by using a DCF coupler. For fluorescence detection, we used a time-gated technique with a novel single-photon avalanche diode (SPAD) working in an ultra-fast gating mode. A custom-made delay chip was integrated in the system to adjust the delay between the excitation laser pulse and the SPAD gate-ON window. This technique allowed to detect fluorescent photons of interest while rejecting most of the background photons, thus leading to a significantly improved signal to noise ratio (SNR). Experiments were carried out in turbid media mimicking tissue with an indocyanine green (ICG) inclusion (1 mM and 100 μM) to compare the time-gated technique and the conventional continuous detection technique. The gating technique increased twofold depth sensitivity, and tenfold SNR at large distances. The dual-modality imaging capacity of our system was also validated with a silicone-based tissue-mimicking phantom.

  17. Endocytosis of Nanoscale Systems for Cancer Treatments.

    PubMed

    Chen, Kai; Li, Xue; Zhu, Hongyan; Gong, Qiyong; Luo, Kui

    2017-04-28

    Advances of nanoscale systems for cancer treatment have been involved in enabling highly regulated site-specific localization to sub cellular organelles hidden beneath cell membranes. Thus far, the cellular entry of these nanoscale systems has been not fully understood. Endocytosisis a form of active transport in which cell transports elected extracellular molecules (such as proteins, viruses, micro-organisms and nanoscale systems) are allowed into cell interiors by engulfing them in an energy-dependent process. This process appears at the plasma membrane surface and contains internalization of the cell membrane as well as the membrane proteins and lipids of cell. There are multiform pathways of endocytosis for nanoscale systems. Further comprehension for the mechanisms of endocytosis is achieved with a combination of efficient genetic manipulations, cell dynamic imaging, and chemical endocytosis inhibitors. This review provides an account of various endocytic pathways, itemizes current methods to study endocytosis of nanoscale systems, discusses some factors associated with cellular uptake for nanoscale systems and introduces the trafficking behavior for nanoscale systems with active targeting. An insight into the endocytosis mechanism is urgent and significant for developing safe and efficient nanoscale systems for cancer diagnosis and therapy. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

  18. Novel technique of source and drain engineering for dual-material double-gate (DMDG) SOI MOSFETS

    NASA Astrophysics Data System (ADS)

    Yadav, Himanshu; Malviya, Abhishek Kumar; Chauhan, R. K.

    2018-04-01

    The dual-metal dual-gate (DMDG) SOI has been used with Dual Sided Source and Drain Engineered 50nm SOI MOSFET with various high-k gate oxide. It has been scrutinized in this work to enhance its electrical performance. The proposed structure is designed by creating Dual Sided Source and Drain Modification and its characteristics are evaluated on ATLAS device simulator. The consequence of this dual sided assorted doping on source and drain side of the DMDG transistor has better leakage current immunity and heightened ION current with higher ION to IOFF Ratio. Which thereby vesting the proposed device appropriate for low power digital applications.

  19. Analytical model of threshold voltage degradation due to localized charges in gate material engineered Schottky barrier cylindrical GAA MOSFETs

    NASA Astrophysics Data System (ADS)

    Kumar, Manoj; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

    2016-10-01

    The threshold voltage degradation due to the hot carrier induced localized charges (LC) is a major reliability concern for nanoscale Schottky barrier (SB) cylindrical gate all around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs). The degradation physics of gate material engineered (GME)-SB-GAA MOSFETs due to LC is still unexplored. An explicit threshold voltage degradation model for GME-SB-GAA-MOSFETs with the incorporation of localized charges (N it) is developed. To accurately model the threshold voltage the minimum channel carrier density has been taken into account. The model renders how +/- LC affects the device subthreshold performance. One-dimensional (1D) Poisson’s and 2D Laplace equations have been solved for two different regions (fresh and damaged) with two different gate metal work-functions. LCs are considered at the drain side with low gate metal work-function as N it is more vulnerable towards the drain. For the reduction of carrier mobility degradation, a lightly doped channel has been considered. The proposed model also includes the effect of barrier height lowering at the metal-semiconductor interface. The developed model results have been verified using numerical simulation data obtained by the ATLAS-3D device simulator and excellent agreement is observed between analytical and simulation results.

  20. A unified analytical drain current model for Double-Gate Junctionless Field-Effect Transistors including short channel effects

    NASA Astrophysics Data System (ADS)

    Raksharam; Dutta, Aloke K.

    2017-04-01

    In this paper, a unified analytical model for the drain current of a symmetric Double-Gate Junctionless Field-Effect Transistor (DG-JLFET) is presented. The operation of the device has been classified into four modes: subthreshold, semi-depleted, accumulation, and hybrid; with the main focus of this work being on the accumulation mode, which has not been dealt with in detail so far in the literature. A physics-based model, using a simplified one-dimensional approach, has been developed for this mode, and it has been successfully integrated with the model for the hybrid mode. It also includes the effect of carrier mobility degradation due to the transverse electric field, which was hitherto missing in the earlier models reported in the literature. The piece-wise models have been unified using suitable interpolation functions. In addition, the model includes two most important short-channel effects pertaining to DG-JLFETs, namely the Drain Induced Barrier Lowering (DIBL) and the Subthreshold Swing (SS) degradation. The model is completely analytical, and is thus computationally highly efficient. The results of our model have shown an excellent match with those obtained from TCAD simulations for both long- and short-channel devices, as well as with the experimental data reported in the literature.

  1. A novel optical gating method for laser gated imaging

    NASA Astrophysics Data System (ADS)

    Ginat, Ran; Schneider, Ron; Zohar, Eyal; Nesher, Ofer

    2013-06-01

    For the past 15 years, Elbit Systems is developing time-resolved active laser-gated imaging (LGI) systems for various applications. Traditional LGI systems are based on high sensitive gated sensors, synchronized to pulsed laser sources. Elbit propriety multi-pulse per frame method, which is being implemented in LGI systems, improves significantly the imaging quality. A significant characteristic of the LGI is its ability to penetrate a disturbing media, such as rain, haze and some fog types. Current LGI systems are based on image intensifier (II) sensors, limiting the system in spectral response, image quality, reliability and cost. A novel propriety optical gating module was developed in Elbit, untying the dependency of LGI system on II. The optical gating module is not bounded to the radiance wavelength and positioned between the system optics and the sensor. This optical gating method supports the use of conventional solid state sensors. By selecting the appropriate solid state sensor, the new LGI systems can operate at any desired wavelength. In this paper we present the new gating method characteristics, performance and its advantages over the II gating method. The use of the gated imaging systems is described in a variety of applications, including results from latest field experiments.

  2. Transfer molding processes for nanoscale patterning of poly-L-lactic acid (PLLA) films

    NASA Astrophysics Data System (ADS)

    Dhakal, Rabin; Peer, Akshit; Biswas, Rana; Kim, Jaeyoun

    2016-03-01

    Nanoscale patterned structures composed of biomaterials exhibit great potential for the fabrication of functional biostructures. In this paper, we report cost-effective, rapid, and highly reproducible soft lithographic transfer-molding techniques for creating periodic micro- and nano-scale textures on poly (L-lactic acid) (PLLA) surface. These artificial textures can increase the overall surface area and change the release dynamics of the therapeutic agents coated on it. Specifically, we use the double replication technique in which the master pattern is first transferred to the PDMS mold and the pattern on PDMS is then transferred to the PLLA films through drop-casting as well as nano-imprinting. The ensuing comparison studies reveal that the drop-cast PLLA allows pattern transfer at higher levels of fidelity, enabling the realization of nano-hole and nano-cone arrays with pitch down to ~700 nm. The nano-patterned PLLA film was then coated with rapamycin to make it drug-eluting.

  3. Origin of noise in liquid-gated Si nanowire troponin biosensors.

    PubMed

    Kutovyi, Y; Zadorozhnyi, I; Hlukhova, H; Handziuk, V; Petrychuk, M; Ivanchuk, Andriy; Vitusevich, S

    2018-04-27

    Liquid-gated Si nanowire field-effect transistor (FET) biosensors are fabricated using a complementary metal-oxide-semiconductor-compatible top-down approach. The transport and noise properties of the devices reflect the high performance of the FET structures, which allows label-free detection of cardiac troponin I (cTnI) molecules. Moreover, after removing the troponin antigens the structures demonstrate the same characteristics as before cTnI detection, indicating the reusable operation of biosensors. Our results show that the additional noise is related to the troponin molecules and has characteristics which considerably differ from those usually recorded for conventional FETs without target molecules. We describe the origin of the noise and suggest that noise spectroscopy represents a powerful tool for understanding molecular dynamic processes in nanoscale FET-based biosensors.

  4. Origin of noise in liquid-gated Si nanowire troponin biosensors

    NASA Astrophysics Data System (ADS)

    Kutovyi, Y.; Zadorozhnyi, I.; Hlukhova, H.; Handziuk, V.; Petrychuk, M.; Ivanchuk, Andriy; Vitusevich, S.

    2018-04-01

    Liquid-gated Si nanowire field-effect transistor (FET) biosensors are fabricated using a complementary metal-oxide-semiconductor-compatible top-down approach. The transport and noise properties of the devices reflect the high performance of the FET structures, which allows label-free detection of cardiac troponin I (cTnI) molecules. Moreover, after removing the troponin antigens the structures demonstrate the same characteristics as before cTnI detection, indicating the reusable operation of biosensors. Our results show that the additional noise is related to the troponin molecules and has characteristics which considerably differ from those usually recorded for conventional FETs without target molecules. We describe the origin of the noise and suggest that noise spectroscopy represents a powerful tool for understanding molecular dynamic processes in nanoscale FET-based biosensors.

  5. Center for Nanoscale Science and Technology

    National Institute of Standards and Technology Data Gateway

    NIST Center for Nanoscale Science and Technology (Program website, free access)   Currently there is no database matching your keyword search, but the NIST Center for Nanoscale Science and Technology website may be of interest. The Center for Nanoscale Science and Technology enables science and industry by providing essential measurement methods, instrumentation, and standards to support all phases of nanotechnology development, from discovery to production.

  6. Solvothermal synthesis of gallium-indium-zinc-oxide nanoparticles for electrolyte-gated transistors.

    PubMed

    Santos, Lídia; Nunes, Daniela; Calmeiro, Tomás; Branquinho, Rita; Salgueiro, Daniela; Barquinha, Pedro; Pereira, Luís; Martins, Rodrigo; Fortunato, Elvira

    2015-01-14

    Solution-processed field-effect transistors are strategic building blocks when considering low-cost sustainable flexible electronics. Nevertheless, some challenges (e.g., processing temperature, reliability, reproducibility in large areas, and cost effectiveness) are requirements that must be surpassed in order to achieve high-performance transistors. The present work reports electrolyte-gated transistors using as channel layer gallium-indium-zinc-oxide nanoparticles produced by solvothermal synthesis combined with a solid-state electrolyte based on aqueous dispersions of vinyl acetate stabilized with cellulose derivatives, acrylic acid ester in styrene and lithium perchlorate. The devices fabricated using this approach display a ION/IOFF up to 1 × 10(6), threshold voltage (VTh) of 0.3-1.9 V, and mobility up to 1 cm(2)/(V s), as a function of gallium-indium-zinc-oxide ink formulation and two different annealing temperatures. These results validates the usage of electrolyte-gated transistors as a viable and promising alternative for nanoparticle based semiconductor devices as the electrolyte improves the interface and promotes a more efficient step coverage of the channel layer, reducing the operating voltage when compared with conventional dielectrics gating. Moreover, it is shown that by controlling the applied gate potential, the operation mechanism of the electrolyte-gated transistors can be modified from electric double layer to electrochemical doping.

  7. Transport Properties of Anatase-TiO2 Polycrystalline-Thin-Film Field-Effect Transistors with Electrolyte Gate Layers

    NASA Astrophysics Data System (ADS)

    Horita, Ryohei; Ohtani, Kyosuke; Kai, Takahiro; Murao, Yusuke; Nishida, Hiroya; Toya, Taku; Seo, Kentaro; Sakai, Mio; Okuda, Tetsuji

    2013-11-01

    We have fabricated anatase-TiO2 polycrystalline-thin-film field-effect transistors (FETs) with poly(vinyl alcohol) (PVA), ion-liquid (IL), and ion-gel (IG) gate layers, and have tried to improve the response to gate voltage by varying the concentration of mobile ions in these electrolyte gate layers. The increase in the concentration of mobile ions by doping NaOH into the PVA gate layer or reducing the gelator in the IG gate layer markedly increases the drain-source current and reduces the driving gate voltage, which show that the mobile ions in the PVA, IL, and IG gate layers cause the formation of electric double layers (EDLs), which act as nanogap capacitors. In these TiO2-EDL-FETs, the slow formation of EDLs and the oxidation reaction at the interface between the surface of the TiO2 film and the electrolytes cause unideal FET properties. In the optimized IL and IG TiO2-EDL-FETs, the driving gate voltage is less than 1 V and the ON/OFF ratios of the transfer characteristics are about 1×104 at RT, and the nearly metallic state is realized at the interface purely by applying a gate voltage.

  8. Nano-scale characterization of the dynamics of the chloroplast Toc translocon.

    PubMed

    Reddick, L Evan; Chotewutmontri, Prakitchai; Crenshaw, Will; Dave, Ashita; Vaughn, Michael; Bruce, Barry D

    2008-01-01

    Translocons are macromolecular nano-scale machines that facilitate the selective translocation of proteins across membranes. Although common in function, different translocons have evolved diverse molecular mechanisms for protein translocation. Subcellular organelles of endosymbiotic origin such as the chloroplast and mitochondria had to evolve/acquire translocons capable of importing proteins whose genes were transferred to the host genome. These gene products are expressed on cytosolic ribosomes as precursor proteins and targeted back to the organelle by an N-terminal extension called the transit peptide or presequence. In chloroplasts the transit peptide is specifically recognized by the Translocon of the Outer Chloroplast membrane (Toc) which is composed of receptor GTPases that potentially function as gate-like switches, where GTP binding and hydrolysis somehow facilitate preprotein binding and translocation. Compared to other translocons, the dynamics of the Toc translocon are probably more complex and certainly less understood. We have developed biochemical/biophysical, imaging, and computational techniques to probe the dynamics of the Toc translocon at the nanoscale. In this chapter we provide detailed protocols for kinetic and binding analysis of precursor interactions in organeller, measurement of the activity and nucleotide binding of the Toc GTPases, native electrophoretic analysis of the assembly/organization of the Toc complex, visualization of the distribution and mobility of Toc apparatus on the surface of chloroplasts, and conclude with the identification and molecular modeling Toc75 POTRA domains. With these new methodologies we discuss future directions of the field.

  9. Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Schmid, H., E-mail: sih@zurich.ibm.com; Borg, M.; Moselund, K.

    2015-06-08

    III–V nanoscale devices were monolithically integrated on silicon-on-insulator (SOI) substrates by template-assisted selective epitaxy (TASE) using metal organic chemical vapor deposition. Single crystal III–V (InAs, InGaAs, GaAs) nanostructures, such as nanowires, nanostructures containing constrictions, and cross junctions, as well as 3D stacked nanowires were directly obtained by epitaxial filling of lithographically defined oxide templates. The benefit of TASE is exemplified by the straightforward fabrication of nanoscale Hall structures as well as multiple gate field effect transistors (MuG-FETs) grown co-planar to the SOI layer. Hall measurements on InAs nanowire cross junctions revealed an electron mobility of 5400 cm{sup 2}/V s, while the alongsidemore » fabricated InAs MuG-FETs with ten 55 nm wide, 23 nm thick, and 390 nm long channels exhibit an on current of 660 μA/μm and a peak transconductance of 1.0 mS/μm at V{sub DS} = 0.5 V. These results demonstrate TASE as a promising fabrication approach for heterogeneous material integration on Si.« less

  10. A novel nanoscaled Schottky barrier based transmission gate and its digital circuit applications

    NASA Astrophysics Data System (ADS)

    Kumar, Sunil; Loan, Sajad A.; Alamoud, Abdulrahman M.

    2017-04-01

    In this work we propose and simulate a compact nanoscaled transmission gate (TG) employing a single Schottky barrier based transistor in the transmission path and a single transistor based Sajad-Sunil-Schottky (SSS) device as an inverter. Therefore, just two transistors are employed to realize a complete transmission gate which normally consumes four transistors in the conventional technology. The transistors used to realize the transmission path and the SSS inverter in the proposed TG are the double gate Schottky barrier devices, employing stacks of two metal silicides, platinum silicide (PtSi) and erbium silicide (ErSi). It has been observed that the realization of the TG gate by the proposed technology has resulted into a compact structure, with reduced component count, junctions, interconnections and regions in comparison to the conventional technology. The further focus of this work is on the application part of the proposed technology. So for the first time, the proposed technology has been used to realize various combinational circuits, like a two input AND gate, a 2:1 multiplexer and a two input XOR circuits. It has been observed that the transistor count has got reduced by half in a TG, two input AND gate, 2:1 multiplexer and in a two input XOR gate. Therefore, a significant reduction in transistor count and area requirement can be achieved by using the proposed technology. The proposed technology can be also used to perform the compact realization of other combinational and sequential circuitry in future.

  11. Automatic alternative phase-shift mask CAD layout tool for gate shrinkage of embedded DRAM in logic below 0.18 μm

    NASA Astrophysics Data System (ADS)

    Ohnuma, Hidetoshi; Kawahira, Hiroichi

    1998-09-01

    An automatic alternative phase shift mask (PSM) pattern layout tool has been newly developed. This tool is dedicated for embedded DRAM in logic device to shrink gate line width with improving line width controllability in lithography process with a design rule below 0.18 micrometers by the KrF excimer laser exposure. The tool can crete Levenson type PSM used being coupled with a binary mask adopting a double exposure method for positive photo resist. By using graphs, this tool automatically creates alternative PSM patterns. Moreover, it does not give any phase conflicts. By adopting it to actual embedded DRAM in logic cells, we have provided 0.16 micrometers gate resist patterns at both random logic and DRAM areas. The patterns were fabricated using two masks with the double exposure method. Gate line width has been well controlled under a practical exposure-focus window.

  12. Frequency-Stable Ionic-Type Hybrid Gate Dielectrics for High Mobility Solution-Processed Metal-Oxide Thin-Film Transistors

    PubMed Central

    Heo, Jae Sang; Choi, Seungbeom; Jo, Jeong-Wan; Kang, Jingu; Park, Ho-Hyun; Kim, Yong-Hoon; Park, Sung Kyu

    2017-01-01

    In this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs) by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD). The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlOx) and poly(4-vinylphenol) (PVP), exhibited high dielectric constant (ε~8.15) and high-frequency-stable characteristics (1 MHz). Using the ionic-type HGD as a gate dielectric layer, an minimal electron-double-layer (EDL) can be formed at the gate dielectric/InOx interface, enhancing the field-effect mobility of the TFTs. Particularly, using the ionic-type HGD gate dielectrics annealed at 350 °C, InOx TFTs having an average field-effect mobility of 16.1 cm2/Vs were achieved (maximum mobility of 24 cm2/Vs). Furthermore, the ionic-type HGD gate dielectrics can be processed at a low temperature of 150 °C, which may enable their applications in low-thermal-budget plastic and elastomeric substrates. In addition, we systematically studied the operational stability of the InOx TFTs using the HGD gate dielectric, and it was observed that the HGD gate dielectric effectively suppressed the negative threshold voltage shift during the negative-illumination-bias stress possibly owing to the recombination of hole carriers injected in the gate dielectric with the negatively charged ionic species in the HGD gate dielectric. PMID:28772972

  13. Enrichment of Glycoproteins using Nano-scale Chelating Con A Monolithic Capillary Chromatography

    PubMed Central

    Feng, Shun; Yang, Na; Pennathur, Subramaniam; Goodison, Steve; Lubman, David M.

    2009-01-01

    Immobilized lectin chromatography can be employed for glycoprotein enrichment, but commonly used columns have limitations of yield and resolution. In order to improve efficiency and to make the technique applicable to minimal sample material, we have developed a nano-scale chelating Concanavalin A (Con A) monolithic capillary prepared using GMA-EDMA (glycidyl methacrylate–co-ethylene dimethacrylate) as polymeric support. Con A was immobilized on Cu(II)-charged iminodiacetic acid (IDA) regenerable sorbents by forming a IDA:Cu(II):Con A sandwich affinity structure that has high column capacity as well as stability. When compared with conventional Con A lectin chromatography, the monolithic capillary enabled the better reproducible detection of over double the number of unique N-glycoproteins in human urine samples. Utility for analysis of minimal biological samples was confirmed by the successful elucidation of glycoprotein profiles in mouse urine samples at the microliter scale. The improved efficiency of the nano-scale monolithic capillary will impact the analysis of glycoproteins in complex biological samples, especially where only limited material may be available. PMID:19366252

  14. Nanoscale potentiometry.

    PubMed

    Bakker, Eric; Pretsch, Ernö

    2008-01-01

    Potentiometric sensors share unique characteristics that set them apart from other electrochemical sensors. Potentiometric nanoelectrodes have been reported and successfully used for many decades, and we review these developments. Current research chiefly focuses on nanoscale films at the outer or the inner side of the membrane, with outer layers for increasing biocompatibility, expanding the sensor response, or improving the limit of detection (LOD). Inner layers are mainly used for stabilizing the response and eliminating inner aqueous contacts or undesired nanoscale layers of water. We also discuss the ultimate detectability of ions with such sensors and the power of coupling the ultra-low LODs of ion-selective electrodes with nanoparticle labels to give attractive bioassays that can compete with state-of-the-art electrochemical detection.

  15. Development of a Si/ SiO 2-based double quantum dot charge qubit with dispersive microwave readout

    NASA Astrophysics Data System (ADS)

    House, M. G.; Henry, E.; Schmidt, A.; Naaman, O.; Siddiqi, I.; Pan, H.; Xiao, M.; Jiang, H. W.

    2011-03-01

    Coupling of a high-Q microwave resonator to superconducting qubits has been successfully used to prepare, manipulate, and read out the state of a single qubit, and to mediate interactions between qubits. Our work is geared toward implementing this architecture in a semiconductor qubit. We present the design and development of a lateral quantum dot in which a superconducting microwave resonator is capacitively coupled to a double dot charge qubit. The device is a silicon MOSFET structure with a global gate which is used to accumulate electrons at a Si/ Si O2 interface. A set of smaller gates are used to deplete these electrons to define a double quantum dot and adjacent conduction channels. Two of these depletion gates connect directly to the conductors of a 6 GHz co-planar stripline resonator. We present measurements of transport and conventional charge sensing used to characterize the double quantum dot, and demonstrate that it is possible to reach the few-electron regime in this system. This work is supported by the DARPA-QuEST program.

  16. Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness

    NASA Astrophysics Data System (ADS)

    Nagy, Daniel; Aldegunde, Manuel; Elmessary, Muhammad A.; García-Loureiro, Antonio J.; Seoane, Natalia; Kalna, Karol

    2018-04-01

    Interface roughness scattering (IRS) is one of the major scattering mechanisms limiting the performance of non-planar multi-gate transistors, like Fin field-effect transistors (FETs). Here, two physical models (Ando’s and multi-sub-band) of electron scattering with the interface roughness induced potential are investigated using an in-house built 3D finite element ensemble Monte Carlo simulation toolbox including parameter-free 2D Schrödinger equation quantum correction that handles all relevant scattering mechanisms within highly non-equilibrium carrier transport. Moreover, we predict the effect of IRS on performance of FinFETs with realistic channel cross-section shapes with respect to the IRS correlation length (Λ) and RMS height (Δ_RMS ). The simulations of the n-type SOI FinFETs with the multi-sub-band IRS model shows its very strong effect on electron transport in the device channel compared to the Ando’s model. We have also found that the FinFETs are strongly affected by the IRS in the ON-region. The limiting effect of the IRS significantly increases as the Fin width is reduced. The FinFETs with <1 1 0> channel orientation are affected more by the IRS than those with the <1 0 0> crystal orientation. Finally, Λ and Δ_RMS are shown to affect the device performance similarly. A change in values by 30% (Λ) or 20% (Δ_RMS ) results in an increase (decrease) of up to 13% in the drive current.

  17. Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness.

    PubMed

    Nagy, Daniel; Aldegunde, Manuel; Elmessary, Muhammad A; García-Loureiro, Antonio J; Seoane, Natalia; Kalna, Karol

    2018-04-11

    Interface roughness scattering (IRS) is one of the major scattering mechanisms limiting the performance of non-planar multi-gate transistors, like Fin field-effect transistors (FETs). Here, two physical models (Ando's and multi-sub-band) of electron scattering with the interface roughness induced potential are investigated using an in-house built 3D finite element ensemble Monte Carlo simulation toolbox including parameter-free 2D Schrödinger equation quantum correction that handles all relevant scattering mechanisms within highly non-equilibrium carrier transport. Moreover, we predict the effect of IRS on performance of FinFETs with realistic channel cross-section shapes with respect to the IRS correlation length (Λ) and RMS height ([Formula: see text]). The simulations of the n-type SOI FinFETs with the multi-sub-band IRS model shows its very strong effect on electron transport in the device channel compared to the Ando's model. We have also found that the FinFETs are strongly affected by the IRS in the ON-region. The limiting effect of the IRS significantly increases as the Fin width is reduced. The FinFETs with [Formula: see text] channel orientation are affected more by the IRS than those with the [Formula: see text] crystal orientation. Finally, Λ and [Formula: see text] are shown to affect the device performance similarly. A change in values by 30% (Λ) or [Formula: see text] ([Formula: see text]) results in an increase (decrease) of up to [Formula: see text] in the drive current.

  18. Gating of the designed trimeric/tetrameric voltage-gated H+ channel

    PubMed Central

    Fujiwara, Yuichiro; Kurokawa, Tatsuki; Takeshita, Kohei; Nakagawa, Atsushi; Larsson, H Peter; Okamura, Yasushi

    2013-01-01

    The voltage-gated H+ channel functions as a dimer, a configuration that is different from standard tetrameric voltage-gated channels. Each channel protomer has its own permeation pathway. The C-terminal coiled-coil domain has been shown to be necessary for both dimerization and cooperative gating in the two channel protomers. Here we report the gating cooperativity in trimeric and tetrameric Hv channels engineered by altering the hydrophobic core sequence of the coiled-coil assembly domain. Trimeric and tetrameric channels exhibited more rapid and less sigmoidal kinetics of activation of H+ permeation than dimeric channels, suggesting that some channel protomers in trimers and tetramers failed to produce gating cooperativity observed in wild-type dimers. Multimerization of trimer and tetramer channels were confirmed by the biochemical analysis of proteins, including crystallography. These findings indicate that the voltage-gated H+ channel is optimally designed as a dimeric channel on a solid foundation of the sequence pattern of the coiled-coil core, with efficient cooperative gating that ensures sustained and steep voltage-dependent H+ conductance in blood cells. PMID:23165764

  19. Doubling the spectrum of time-domain induced polarization by harmonic de-noising, drift correction, spike removal, tapered gating and data uncertainty estimation

    NASA Astrophysics Data System (ADS)

    Olsson, Per-Ivar; Fiandaca, Gianluca; Larsen, Jakob Juul; Dahlin, Torleif; Auken, Esben

    2016-11-01

    potential readings are previously used for current injection, also for simple contact resistance measurements. We developed a drift-removal scheme that models the polarization effect and efficiently allows for preserving the shape of the IP responses at late times. Uncertainty estimates are essential in the inversion of IP data. Therefore, in the final step of the data processing, we estimate the data standard deviation based on the data variability within the IP gates and the misfit of the background drift removal Overall, the removal of harmonic noise, spikes, self-potential drift, tapered windowing and the uncertainty estimation allows for doubling the usable range of TDIP data to almost four decades in time (corresponding to four decades in frequency), which will significantly advance the applicability of the IP method.

  20. Synergetic effects of double laser pulses for the formation of mild plasma in water: Toward non-gated underwater laser-induced breakdown spectroscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sakka, Tetsuo; Institute of Sustainability Science, Kyoto University, Uji, Kyoto 611-0011; Tamura, Ayaka

    2012-05-07

    We experimentally study the dynamics of the plasma induced by the double-laser-pulse irradiation of solid target in water, and find that an appropriate choice of the pulse energies and pulse interval results in the production of an unprecedentedly mild (low-density) plasma, the emission spectra of which are very narrow even without the time-gated detection. The optimum pulse interval and pulse energies are 15-30 {mu}s and about {approx}1 mJ, respectively, where the latter values are much smaller than those typically employed for this kind of study. In order to clarify the mechanism for the formation of mild plasma we examine themore » role of the first and second laser pulses, and find that the first pulse produces the cavitation bubble without emission (and hence plasma), and the second pulse induces the mild plasma in the cavitation bubble. These findings may present a new phase of underwater laser-induced breakdown spectroscopy.« less

  1. NANOSCALE BIOSENSORS IN ECOSYSTEM EXPOSURE RESEARCH

    EPA Science Inventory

    This powerpoint presentation presented information on nanoscale biosensors in ecosystem exposure research. The outline of the presentation is as follows: nanomaterials environmental exposure research; US agencies involved in nanosensor research; nanoscale LEDs in biosensors; nano...

  2. Gate-Induced Interfacial Superconductivity in 1T-SnSe2.

    PubMed

    Zeng, Junwen; Liu, Erfu; Fu, Yajun; Chen, Zhuoyu; Pan, Chen; Wang, Chenyu; Wang, Miao; Wang, Yaojia; Xu, Kang; Cai, Songhua; Yan, Xingxu; Wang, Yu; Liu, Xiaowei; Wang, Peng; Liang, Shi-Jun; Cui, Yi; Hwang, Harold Y; Yuan, Hongtao; Miao, Feng

    2018-02-14

    Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides, and transition metal chalcogenides and enable one to explore new physics, such as the Ising pairing mechanism. Exploiting gate-induced superconductivity in various materials can provide us with additional platforms to understand emergent interfacial superconductivity. Here, we report the discovery of gate-induced 2D superconductivity in layered 1T-SnSe 2 , a typical member of the main-group metal dichalcogenide (MDC) family, using an EDLT gating geometry. A superconducting transition temperature T c ≈ 3.9 K was demonstrated at the EDL interface. The 2D nature of the superconductivity therein was further confirmed based on (1) a 2D Tinkham description of the angle-dependent upper critical field B c2 , (2) the existence of a quantum creep state as well as a large ratio of the coherence length to the thickness of superconductivity. Interestingly, the in-plane B c2 approaching zero temperature was found to be 2-3 times higher than the Pauli limit, which might be related to an electric field-modulated spin-orbit interaction. Such results provide a new perspective to expand the material matrix available for gate-induced 2D superconductivity and the fundamental understanding of interfacial superconductivity.

  3. Feedback-tuned, noise resilient gates for encoded spin qubits

    NASA Astrophysics Data System (ADS)

    Bluhm, Hendrik

    Spin 1/2 particles form native two level systems and thus lend themselves as a natural qubit implementation. However, encoding a single qubit in several spins entails benefits, such as reducing the resources necessary for qubit control and protection from certain decoherence channels. While several varieties of such encoded spin qubits have been implemented, accurate control remains challenging, and leakage out of the subspace of valid qubit states is a potential issue. Optimal performance typically requires large pulse amplitudes for fast control, which is prone to systematic errors and prohibits standard control approaches based on Rabi flopping. Furthermore, the exchange interaction typically used to electrically manipulate encoded spin qubits is inherently sensitive to charge noise. I will discuss all-electrical, high-fidelity single qubit operations for a spin qubit encoded in two electrons in a GaAs double quantum dot. Starting from a set of numerically optimized control pulses, we employ an iterative tuning procedure based on measured error syndromes to remove systematic errors.Randomized benchmarking yields an average gate fidelity exceeding 98 % and a leakage rate into invalid states of 0.2 %. These gates exhibit a certain degree of resilience to both slow charge and nuclear spin fluctuations due to dynamical correction analogous to a spin echo. Furthermore, the numerical optimization minimizes the impact of fast charge noise. Both types of noise make relevant contributions to gate errors. The general approach is also adaptable to other qubit encodings and exchange based two-qubit gates.

  4. Optical imaging through turbid media with a degenerate four-wave mixing correlation time gate

    DOEpatents

    Sappey, Andrew D.

    1998-04-14

    Optical imaging through turbid media is demonstrated using a degenerate four-wave mixing correlation time gate. An apparatus and method for detecting ballistic and/or snake light while rejecting unwanted diffusive light for imaging structures within highly scattering media are described. Degenerate four-wave mixing (DFWM) of a doubled YAG laser in rhodamine 590 is used to provide an ultrafast correlation time gate to discriminate against light that has undergone multiple scattering and therefore has lost memory of the structures within the scattering medium. Images have been obtained of a test cross-hair pattern through highly turbid suspensions of whole milk in water that are opaque to the naked eye, which demonstrates the utility of DFWM for imaging through turbid media. Use of DFWM as an ultrafast time gate for the detection of ballistic and/or snake light in optical mammography is discussed.

  5. Nanoscale patterning of electronic devices at the amorphous LaAlO3/SrTiO3 oxide interface using an electron sensitive polymer mask

    NASA Astrophysics Data System (ADS)

    Bjørlig, Anders V.; von Soosten, Merlin; Erlandsen, Ricci; Dahm, Rasmus Tindal; Zhang, Yu; Gan, Yulin; Chen, Yunzhong; Pryds, Nini; Jespersen, Thomas S.

    2018-04-01

    A simple approach is presented for designing complex oxide mesoscopic electronic devices based on the conducting interfaces of room temperature grown LaAlO3/SrTiO3 heterostructures. The technique is based entirely on methods known from conventional semiconductor processing technology, and we demonstrate a lateral resolution of ˜100 nm. We study the low temperature transport properties of nanoscale wires and demonstrate the feasibility of the technique for defining in-plane gates allowing local control of the electrostatic environment in mesoscopic devices.

  6. Tunable nano-scale graphene-based devices in mid-infrared wavelengths composed of cylindrical resonators

    NASA Astrophysics Data System (ADS)

    Asgari, Somayyeh; Ghattan Kashani, Zahra; Granpayeh, Nosrat

    2018-04-01

    The performances of three optical devices including a refractive index sensor, a power splitter, and a 4-channel multi/demultiplexer based on graphene cylindrical resonators are proposed, analyzed, and simulated numerically by using the finite-difference time-domain method. The proposed sensor operates on the principle of the shift in resonance wavelength with a change in the refractive index of dielectric materials. The sensor sensitivity has been numerically derived. In addition, the performances of the power splitter and the multi/demultiplexer based on the variation of the resonance wavelengths of cylindrical resonator have been thoroughly investigated. The simulation results are in good agreement with the theoretical ones. Our studies demonstrate that the graphene based ultra-compact, nano-scale devices can be improved to be used as photonic integrated devices, optical switching, and logic gates.

  7. Sliding-gate valve

    DOEpatents

    Usnick, George B.; Ward, Gene T.; Blair, Henry O.; Roberts, James W.; Warner, Terry N.

    1979-01-01

    This invention is a novel valve of the slidable-gate type. The valve is designed especially for long-term use with highly abrasive slurries. The sealing surfaces of the gate are shielded by the valve seats when the valve is fully open or closed, and the gate-to-seat clearance is swept with an inflowing purge gas while the gate is in transit. A preferred form of the valve includes an annular valve body containing an annular seat assembly defining a flow channel. The seat assembly comprises a first seat ring which is slidably and sealably mounted in the body, and a second seat ring which is tightly fitted in the body. These rings cooperatively define an annular gap which, together with passages in the valve body, forms a guideway extending normal to the channel. A plate-type gate is mounted for reciprocation in the guideway between positions where a portion of the plate closes the channel and where a circular aperture in the gate is in register with the channel. The valve casing includes opposed chambers which extend outwardly from the body along the axis of the guideway to accommodate the end portions of the gate. The chambers are sealed from atmosphere; when the gate is in transit, purge gas is admitted to the chambers and flows inwardly through the gate-to-seat-ring, clearance, minimizing buildup of process solids therein. A shaft reciprocated by an external actuator extends into one of the sealed chambers through a shaft seal and is coupled to an end of the gate. Means are provided for adjusting the clearance between the first seat ring and the gate while the valve is in service.

  8. Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers

    PubMed Central

    Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

    2017-01-01

    Abstract Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlOx), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers. PMID:28634499

  9. Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers.

    PubMed

    Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

    2017-01-01

    Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlO[Formula: see text]), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers.

  10. Direct detection of fibrinogen in human plasma using electric-double-layer gated AlGaN/GaN high electron mobility transistors

    NASA Astrophysics Data System (ADS)

    Regmi, Abiral; Sarangadharan, Indu; Chen, Yen-Wen; Hsu, Chen-Pin; Lee, Geng-Yen; Chyi, Jen-Inn; Shiesh, Shu-Chu; Lee, Gwo-Bin; Wang, Yu-Lin

    2017-08-01

    Fibrinogen found in blood plasma is an important protein biomarker for potentially fatal diseases such as cardiovascular diseases. This study focuses on the development of an assay to detect plasmatic fibrinogen using electrical double layer gated AlGaN/GaN high electron mobility transistor biosensors without complex sample pre-treatment methods used in the traditional assays. The test results in buffer solution and clinical plasma samples show high sensitivity, specificity, and dynamic range. The sensor exhibits an ultra-low detection limit of 0.5 g/l and a detection range of 0.5-4.5 g/l in 1× PBS with 1% BSA. The concentration dependent sensor signal in human serum samples demonstrates the specificity to fibrinogen in a highly dense matrix of background proteins. The sensor does not require complicated automation, and quantitative results are obtained in 5 min with <5 μl sample volume. This sensing technique is ideal for speedy blood based diagnostics such as POC (point of care) tests, homecare tests, or personalized healthcare.

  11. Nanoscale chemical mapping of laser-solubilized silk

    NASA Astrophysics Data System (ADS)

    Ryu, Meguya; Kobayashi, Hanae; Balčytis, Armandas; Wang, Xuewen; Vongsvivut, Jitraporn; Li, Jingliang; Urayama, Norio; Mizeikis, Vygantas; Tobin, Mark; Juodkazis, Saulius; Morikawa, Junko

    2017-11-01

    A water soluble amorphous form of silk was made by ultra-short laser pulse irradiation and detected by nanoscale IR mapping. An optical absorption-induced nanoscale surface expansion was probed to yield the spectral response of silk at IR molecular fingerprinting wavelengths with a high  ˜ 20 nm spatial resolution defined by the tip of the probe. Silk microtomed sections of 1-5 μm in thickness were prepared for nanoscale spectroscopy and a laser was used to induce amorphisation. Comparison of silk absorbance measurements carried out by table-top and synchrotron Fourier transform IR spectroscopy proved that chemical imaging obtained at high spatial resolution and specificity (able to discriminate between amorphous and crystalline silk) is reliably achieved by nanoscale IR. Differences in absorbance and spectral line-shapes of the bands are related to the different sensitivity of the applied methods to real and imaginary parts of permittivity. A nanoscale material characterization by combining synchrotron IR radiation and nano-IR is discussed.

  12. Nanoscale phase change memory materials.

    PubMed

    Caldwell, Marissa A; Jeyasingh, Rakesh Gnana David; Wong, H-S Philip; Milliron, Delia J

    2012-08-07

    Phase change memory materials store information through their reversible transitions between crystalline and amorphous states. For typical metal chalcogenide compounds, their phase transition properties directly impact critical memory characteristics and the manipulation of these is a major focus in the field. Here, we discuss recent work that explores the tuning of such properties by scaling the materials to nanoscale dimensions, including fabrication and synthetic strategies used to produce nanoscale phase change memory materials. The trends that emerge are relevant to understanding how such memory technologies will function as they scale to ever smaller dimensions and also suggest new approaches to designing materials for phase change applications. Finally, the challenges and opportunities raised by integrating nanoscale phase change materials into switching devices are discussed.

  13. ISAC's Gating-ML 2.0 data exchange standard for gating description.

    PubMed

    Spidlen, Josef; Moore, Wayne; Brinkman, Ryan R

    2015-07-01

    The lack of software interoperability with respect to gating has traditionally been a bottleneck preventing the use of multiple analytical tools and reproducibility of flow cytometry data analysis by independent parties. To address this issue, ISAC developed Gating-ML, a computer file format to encode and interchange gates. Gating-ML 1.5 was adopted and published as an ISAC Candidate Recommendation in 2008. Feedback during the probationary period from implementors, including major commercial software companies, instrument vendors, and the wider community, has led to a streamlined Gating-ML 2.0. Gating-ML has been significantly simplified and therefore easier to support by software tools. To aid developers, free, open source reference implementations, compliance tests, and detailed examples are provided to stimulate further commercial adoption. ISAC has approved Gating-ML as a standard ready for deployment in the public domain and encourages its support within the community as it is at a mature stage of development having undergone extensive review and testing, under both theoretical and practical conditions. © 2015 International Society for Advancement of Cytometry.

  14. Determination of prospective displacement-based gate threshold for respiratory-gated radiation delivery from retrospective phase-based gate threshold selected at 4D CT simulation.

    PubMed

    Vedam, S; Archambault, L; Starkschall, G; Mohan, R; Beddar, S

    2007-11-01

    Four-dimensional (4D) computed tomography (CT) imaging has found increasing importance in the localization of tumor and surrounding normal structures throughout the respiratory cycle. Based on such tumor motion information, it is possible to identify the appropriate phase interval for respiratory gated treatment planning and delivery. Such a gating phase interval is determined retrospectively based on tumor motion from internal tumor displacement. However, respiratory-gated treatment is delivered prospectively based on motion determined predominantly from an external monitor. Therefore, the simulation gate threshold determined from the retrospective phase interval selected for gating at 4D CT simulation may not correspond to the delivery gate threshold that is determined from the prospective external monitor displacement at treatment delivery. The purpose of the present work is to establish a relationship between the thresholds for respiratory gating determined at CT simulation and treatment delivery, respectively. One hundred fifty external respiratory motion traces, from 90 patients, with and without audio-visual biofeedback, are analyzed. Two respiratory phase intervals, 40%-60% and 30%-70%, are chosen for respiratory gating from the 4D CT-derived tumor motion trajectory. From residual tumor displacements within each such gating phase interval, a simulation gate threshold is defined based on (a) the average and (b) the maximum respiratory displacement within the phase interval. The duty cycle for prospective gated delivery is estimated from the proportion of external monitor displacement data points within both the selected phase interval and the simulation gate threshold. The delivery gate threshold is then determined iteratively to match the above determined duty cycle. The magnitude of the difference between such gate thresholds determined at simulation and treatment delivery is quantified in each case. Phantom motion tests yielded coincidence of simulation

  15. Nanoscale on-chip all-optical logic parity checker in integrated plasmonic circuits in optical communication range

    PubMed Central

    Wang, Feifan; Gong, Zibo; Hu, Xiaoyong; Yang, Xiaoyu; Yang, Hong; Gong, Qihuang

    2016-01-01

    The nanoscale chip-integrated all-optical logic parity checker is an essential core component for optical computing systems and ultrahigh-speed ultrawide-band information processing chips. Unfortunately, little experimental progress has been made in development of these devices to date because of material bottleneck limitations and a lack of effective realization mechanisms. Here, we report a simple and efficient strategy for direct realization of nanoscale chip-integrated all-optical logic parity checkers in integrated plasmonic circuits in the optical communication range. The proposed parity checker consists of two-level cascaded exclusive-OR (XOR) logic gates that are realized based on the linear interference of surface plasmon polaritons propagating in the plasmonic waveguides. The parity of the number of logic 1s in the incident four-bit logic signals is determined, and the output signal is given the logic state 0 for even parity (and 1 for odd parity). Compared with previous reports, the overall device feature size is reduced by more than two orders of magnitude, while ultralow energy consumption is maintained. This work raises the possibility of realization of large-scale integrated information processing chips based on integrated plasmonic circuits, and also provides a way to overcome the intrinsic limitations of serious surface plasmon polariton losses for on-chip integration applications. PMID:27073154

  16. Nanoscale on-chip all-optical logic parity checker in integrated plasmonic circuits in optical communication range.

    PubMed

    Wang, Feifan; Gong, Zibo; Hu, Xiaoyong; Yang, Xiaoyu; Yang, Hong; Gong, Qihuang

    2016-04-13

    The nanoscale chip-integrated all-optical logic parity checker is an essential core component for optical computing systems and ultrahigh-speed ultrawide-band information processing chips. Unfortunately, little experimental progress has been made in development of these devices to date because of material bottleneck limitations and a lack of effective realization mechanisms. Here, we report a simple and efficient strategy for direct realization of nanoscale chip-integrated all-optical logic parity checkers in integrated plasmonic circuits in the optical communication range. The proposed parity checker consists of two-level cascaded exclusive-OR (XOR) logic gates that are realized based on the linear interference of surface plasmon polaritons propagating in the plasmonic waveguides. The parity of the number of logic 1s in the incident four-bit logic signals is determined, and the output signal is given the logic state 0 for even parity (and 1 for odd parity). Compared with previous reports, the overall device feature size is reduced by more than two orders of magnitude, while ultralow energy consumption is maintained. This work raises the possibility of realization of large-scale integrated information processing chips based on integrated plasmonic circuits, and also provides a way to overcome the intrinsic limitations of serious surface plasmon polariton losses for on-chip integration applications.

  17. Stem thrust prediction model for W-K-M double wedge parallel expanding gate valves

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Eldiwany, B.; Alvarez, P.D.; Wolfe, K.

    1996-12-01

    An analytical model for determining the required valve stem thrust during opening and closing strokes of W-K-M parallel expanding gate valves was developed as part of the EPRI Motor-Operated Valve Performance Prediction Methodology (EPRI MOV PPM) Program. The model was validated against measured stem thrust data obtained from in-situ testing of three W-K-M valves. Model predictions show favorable, bounding agreement with the measured data for valves with Stellite 6 hardfacing on the disks and seat rings for water flow in the preferred flow direction (gate downstream). The maximum required thrust to open and to close the valve (excluding wedging andmore » unwedging forces) occurs at a slightly open position and not at the fully closed position. In the nonpreferred flow direction, the model shows that premature wedging can occur during {Delta}P closure strokes even when the coefficients of friction at different sliding surfaces are within the typical range. This paper summarizes the model description and comparison against test data.« less

  18. Determination of prospective displacement-based gate threshold for respiratory-gated radiation delivery from retrospective phase-based gate threshold selected at 4D CT simulation

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Vedam, S.; Archambault, L.; Starkschall, G.

    2007-11-15

    Four-dimensional (4D) computed tomography (CT) imaging has found increasing importance in the localization of tumor and surrounding normal structures throughout the respiratory cycle. Based on such tumor motion information, it is possible to identify the appropriate phase interval for respiratory gated treatment planning and delivery. Such a gating phase interval is determined retrospectively based on tumor motion from internal tumor displacement. However, respiratory-gated treatment is delivered prospectively based on motion determined predominantly from an external monitor. Therefore, the simulation gate threshold determined from the retrospective phase interval selected for gating at 4D CT simulation may not correspond to the deliverymore » gate threshold that is determined from the prospective external monitor displacement at treatment delivery. The purpose of the present work is to establish a relationship between the thresholds for respiratory gating determined at CT simulation and treatment delivery, respectively. One hundred fifty external respiratory motion traces, from 90 patients, with and without audio-visual biofeedback, are analyzed. Two respiratory phase intervals, 40%-60% and 30%-70%, are chosen for respiratory gating from the 4D CT-derived tumor motion trajectory. From residual tumor displacements within each such gating phase interval, a simulation gate threshold is defined based on (a) the average and (b) the maximum respiratory displacement within the phase interval. The duty cycle for prospective gated delivery is estimated from the proportion of external monitor displacement data points within both the selected phase interval and the simulation gate threshold. The delivery gate threshold is then determined iteratively to match the above determined duty cycle. The magnitude of the difference between such gate thresholds determined at simulation and treatment delivery is quantified in each case. Phantom motion tests yielded coincidence of

  19. Atomistic Design and Simulations of Nanoscale Machines and Assembly

    NASA Technical Reports Server (NTRS)

    Goddard, William A., III; Cagin, Tahir; Walch, Stephen P.

    2000-01-01

    Over the three years of this project, we made significant progress on critical theoretical and computational issues in nanoscale science and technology, particularly in:(1) Fullerenes and nanotubes, (2) Characterization of surfaces of diamond and silicon for NEMS applications, (3) Nanoscale machine and assemblies, (4) Organic nanostructures and dendrimers, (5) Nanoscale confinement and nanotribology, (6) Dynamic response of nanoscale structures nanowires (metals, tubes, fullerenes), (7) Thermal transport in nanostructures.

  20. Gated strip proportional detector

    DOEpatents

    Morris, C.L.; Idzorek, G.C.; Atencio, L.G.

    1985-02-19

    A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10/sup 6/. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

  1. Gated strip proportional detector

    DOEpatents

    Morris, Christopher L.; Idzorek, George C.; Atencio, Leroy G.

    1987-01-01

    A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10.sup.6. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

  2. Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Santi, C. de; Meneghini, M., E-mail: matteo.meneghini@dei.unipd.it; Meneghesso, G.

    2014-08-18

    With this paper we propose a test method for evaluating the dynamic performance of GaN-based transistors, namely, gate-frequency sweep measurements: the effectiveness of the method is verified by characterizing the dynamic performance of Gate Injection Transistors. We demonstrate that this method can provide an effective description of the impact of traps on the transient performance of Heterojunction Field Effect Transistors, and information on the properties (activation energy and cross section) of the related defects. Moreover, we discuss the relation between the results obtained by gate-frequency sweep measurements and those collected by conventional drain current transients and double pulse characterization.

  3. EDITORIAL: Nanoscale metrology Nanoscale metrology

    NASA Astrophysics Data System (ADS)

    Picotto, G. B.; Koenders, L.; Wilkening, G.

    2009-08-01

    Instrumentation and measurement techniques at the nanoscale play a crucial role not only in extending our knowledge of the properties of matter and processes in nanosciences, but also in addressing new measurement needs in process control and quality assurance in industry. Micro- and nanotechnologies are now facing a growing demand for quantitative measurements to support the reliability, safety and competitiveness of products and services. Quantitative measurements presuppose reliable and stable instruments and measurement procedures as well as suitable calibration artefacts to ensure the quality of measurements and traceability to standards. This special issue of Measurement Science and Technology presents selected contributions from the Nanoscale 2008 seminar held at the Istituto Nazionale di Ricerca Metrologica (INRIM), Torino, in September 2008. This was the 4th Seminar on Nanoscale Calibration Standards and Methods and the 8th Seminar on Quantitative Microscopy (the first being held in 1995). The seminar was jointly organized by the Nanometrology Group within EUROMET (The European Collaboration in Measurement Standards), the German Nanotechnology Competence Centre 'Ultraprecise Surface Figuring' (CC-UPOB), the Physikalisch-Technische Bundesanstalt (PTB) and INRIM. A special event during the seminar was the 'knighting' of Günter Wilkening from PTB, Braunschweig, Germany, as the 1st Knight of Dimensional Nanometrology. Günter Wilkening received the NanoKnight Award for his outstanding work in the field of dimensional nanometrology over the last 20 years. The contributions in this special issue deal with the developments and improvements of instrumentation and measurement methods for scanning force microscopy (SFM), electron and optical microscopy, high-resolution interferometry, calibration of instruments and new standards, new facilities and applications including critical dimension (CD) measurements on small and medium structures and nanoparticle

  4. Dynamics of systems on the nanoscale

    NASA Astrophysics Data System (ADS)

    Korol, Andrei V.; Solov'yov, Andrey V.

    2017-12-01

    Various aspects of the structure formation and dynamics of animate and inanimate matter on the nanoscale is a highly interdisciplinary field of rapidly emerging research interest by both experimentalists and theorists. The International Conference on Dynamics of Systems on the Nanoscale (DySoN) is the premier forum to present cutting-edge research in this field. It was established in 2010 and the most recent conference was held in Bad Ems, Germany in October of 2016. This Topical Issue presents original research results from some of the participants, who attended this conference. Contribution to the Topical Issue "Dynamics of Systems at the Nanoscale", edited by Andrey Solov'yov and Andrei Korol.

  5. Optical NAND gate

    DOEpatents

    Skogen, Erik J [Albuquerque, NM; Raring, James [Goleta, CA; Tauke-Pedretti, Anna [Albuquerque, NM

    2011-08-09

    An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  6. Directed transport by surface chemical potential gradients for enhancing analyte collection in nanoscale sensors.

    PubMed

    Sitt, Amit; Hess, Henry

    2015-05-13

    Nanoscale detectors hold great promise for single molecule detection and the analysis of small volumes of dilute samples. However, the probability of an analyte reaching the nanosensor in a dilute solution is extremely low due to the sensor's small size. Here, we examine the use of a chemical potential gradient along a surface to accelerate analyte capture by nanoscale sensors. Utilizing a simple model for transport induced by surface binding energy gradients, we study the effect of the gradient on the efficiency of collecting nanoparticles and single and double stranded DNA. The results indicate that chemical potential gradients along a surface can lead to an acceleration of analyte capture by several orders of magnitude compared to direct collection from the solution. The improvement in collection is limited to a relatively narrow window of gradient slopes, and its extent strongly depends on the size of the gradient patch. Our model allows the optimization of gradient layouts and sheds light on the fundamental characteristics of chemical potential gradient induced transport.

  7. Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nylund, Gustav; Storm, Kristian; Torstensson, Henrik

    2013-12-04

    We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

  8. [Smart drug delivery systems based on nanoscale ZnO].

    PubMed

    Huang, Xiao; Chen, Chun; Yi, Caixia; Zheng, Xi

    2018-04-01

    In view of the excellent biocompatibility as well as the low cost, nanoscale ZnO shows great potential for drug delivery application. Moreover, The charming character enable nanoscale ZnO some excellent features (e.g. dissolution in acid, ultrasonic permeability, microwave absorbing, hydrophobic/hydrophilic transition). All of that make nanoscale ZnO reasonable choices for smart drug delivery. In the recent decade, more and more studies have focused on controlling the drug release behavior via smart drug delivery systems based on nanoscale ZnO responsive to some certain stimuli. Herein, we review the recent exciting progress on the pH-responsive, ultrasound-responsive, microwave-responsive and UV-responsive nanoscale ZnO-based drug delivery systems. A brief introduction of the drug controlled release behavior and its effect of the drug delivery systems is presented. The biocompatibility of nanoscale ZnO is also discussed. Moreover, its development prospect is looked forward.

  9. Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

    PubMed

    Bae, Jong-Ho; Lee, Jong-Ho

    2016-05-01

    A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.

  10. EDITORIAL: Nanoscale metrology Nanoscale metrology

    NASA Astrophysics Data System (ADS)

    Klapetek, P.; Koenders, L.

    2011-09-01

    This special issue of Measurement Science and Technology presents selected contributions from the NanoScale 2010 seminar held in Brno, Czech Republic. It was the 5th Seminar on Nanoscale Calibration Standards and Methods and the 9th Seminar on Quantitative Microscopy (the first being held in 1995). The seminar was jointly organized with the Czech Metrology Institute (CMI) and the Nanometrology Group of the Technical Committee-Length of EURAMET. There were two workshops that were integrated into NanoScale 2010: first a workshop presenting the results obtained in NANOTRACE, a European Metrology Research Project (EMRP) on displacement-measuring optical interferometers, and second a workshop about the European metrology landscape in nanometrology related to thin films, scanning probe microscopy and critical dimension. The aim of this workshop was to bring together developers, applicants and metrologists working in this field of nanometrology and to discuss future needs. For more information see www.co-nanomet.eu. The articles in this special issue of Measurement Science and Technology cover some novel scientific results. This issue can serve also as a representative selection of topics that are currently being investigated in the field of European and world-wide nanometrology. Besides traditional topics of dimensional metrology, like development of novel interferometers or laser stabilization techniques, some novel interesting trends in the field of nanometrology are observed. As metrology generally reflects the needs of scientific and industrial research, many research topics addressed refer to current trends in nanotechnology, too, focusing on traceability and improved measurement accuracy in this field. While historically the most studied standards in nanometrology were related to simple geometric structures like step heights or 1D or 2D gratings, now we are facing tasks to measure 3D structures and many unforeseen questions arising from interesting physical

  11. Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator

    NASA Astrophysics Data System (ADS)

    Hiroki, Mizuha; Maeda, Yasutaka; Ohmi, Shun-ichiro

    2018-02-01

    The scaling of organic field-effect transistors (OFETs) is necessary for high-density integration and for this, OFETs with a top-gate configuration are required. There have been several reports of damageless lithography processes for organic semiconductor or insulator layers. However, it is still difficult to fabricate scaled OFETs with a top-gate configuration. In this study, the lift-off process and the device characteristics of the OFETs with a top-gate configuration utilizing an amorphous (α) rubrene gate insulator were investigated. We have confirmed that α-rubrene shows an insulating property, and its extracted linear mobility was 2.5 × 10-2 cm2/(V·s). The gate length and width were 10 and 60 µm, respectively. From these results, the OFET with a top-gate configuration utilizing an α-rubrene gate insulator is promising for the high-density integration of scaled OFETs.

  12. Cardiac gating with a pulse oximeter for dual-energy imaging

    NASA Astrophysics Data System (ADS)

    Shkumat, N. A.; Siewerdsen, J. H.; Dhanantwari, A. C.; Williams, D. B.; Paul, N. S.; Yorkston, J.; Van Metter, R.

    2008-11-01

    The development and evaluation of a prototype cardiac gating system for double-shot dual-energy (DE) imaging is described. By acquiring both low- and high-kVp images during the resting phase of the cardiac cycle (diastole), heart misalignment between images can be reduced, thereby decreasing the magnitude of cardiac motion artifacts. For this initial implementation, a fingertip pulse oximeter was employed to measure the peripheral pulse waveform ('plethysmogram'), offering potential logistic, cost and workflow advantages compared to an electrocardiogram. A gating method was developed that accommodates temporal delays due to physiological pulse propagation, oximeter waveform processing and the imaging system (software, filter-wheel, anti-scatter Bucky-grid and flat-panel detector). Modeling the diastolic period allowed the calculation of an implemented delay, timp, required to trigger correctly during diastole at any patient heart rate (HR). The model suggests a triggering scheme characterized by two HR regimes, separated by a threshold, HRthresh. For rates at or below HRthresh, sufficient time exists to expose on the same heartbeat as the plethysmogram pulse [timp(HR) = 0]. Above HRthresh, a characteristic timp(HR) delays exposure to the subsequent heartbeat, accounting for all fixed and variable system delays. Performance was evaluated in terms of accuracy and precision of diastole-trigger coincidence and quantitative evaluation of artifact severity in gated and ungated DE images. Initial implementation indicated 85% accuracy in diastole-trigger coincidence. Through the identification of an improved HR estimation method (modified temporal smoothing of the oximeter waveform), trigger accuracy of 100% could be achieved with improved precision. To quantify the effect of the gating system on DE image quality, human observer tests were conducted to measure the magnitude of cardiac artifact under conditions of successful and unsuccessful diastolic gating. Six observers

  13. Cardiac gating with a pulse oximeter for dual-energy imaging.

    PubMed

    Shkumat, N A; Siewerdsen, J H; Dhanantwari, A C; Williams, D B; Paul, N S; Yorkston, J; Van Metter, R

    2008-11-07

    The development and evaluation of a prototype cardiac gating system for double-shot dual-energy (DE) imaging is described. By acquiring both low- and high-kVp images during the resting phase of the cardiac cycle (diastole), heart misalignment between images can be reduced, thereby decreasing the magnitude of cardiac motion artifacts. For this initial implementation, a fingertip pulse oximeter was employed to measure the peripheral pulse waveform ('plethysmogram'), offering potential logistic, cost and workflow advantages compared to an electrocardiogram. A gating method was developed that accommodates temporal delays due to physiological pulse propagation, oximeter waveform processing and the imaging system (software, filter-wheel, anti-scatter Bucky-grid and flat-panel detector). Modeling the diastolic period allowed the calculation of an implemented delay, t(imp), required to trigger correctly during diastole at any patient heart rate (HR). The model suggests a triggering scheme characterized by two HR regimes, separated by a threshold, HR(thresh). For rates at or below HR(thresh), sufficient time exists to expose on the same heartbeat as the plethysmogram pulse [t(imp)(HR) = 0]. Above HR(thresh), a characteristic t(imp)(HR) delays exposure to the subsequent heartbeat, accounting for all fixed and variable system delays. Performance was evaluated in terms of accuracy and precision of diastole-trigger coincidence and quantitative evaluation of artifact severity in gated and ungated DE images. Initial implementation indicated 85% accuracy in diastole-trigger coincidence. Through the identification of an improved HR estimation method (modified temporal smoothing of the oximeter waveform), trigger accuracy of 100% could be achieved with improved precision. To quantify the effect of the gating system on DE image quality, human observer tests were conducted to measure the magnitude of cardiac artifact under conditions of successful and unsuccessful diastolic gating

  14. Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology

    NASA Astrophysics Data System (ADS)

    Condori Quispe, Hugo O.; Encomendero-Risco, Jimy J.; Xing, Huili Grace; Sensale-Rodriguez, Berardi

    2016-08-01

    We theoretically analyze the operation of a terahertz amplifier consisting of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT) in a grating-gate topology. In these devices, the key element enabling substantial power gain is the efficient coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e., the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as discussed in previous works, therefore potentially enabling terahertz amplification with associated power gains >40 dB.

  15. Non-resonant Nanoscale Extreme Light Confinement

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Subramania, Ganapathi Subramanian; Huber, Dale L.

    2014-09-01

    A wide spectrum of photonics activities Sandia is engaged in such as solid state lighting, photovoltaics, infrared imaging and sensing, quantum sources, rely on nanoscale or ultrasubwavelength light-matter interactions (LMI). The fundamental understanding in confining electromagnetic power and enhancing electric fields into ever smaller volumes is key to creating next generation devices for these programs. The prevailing view is that a resonant interaction (e.g. in microcavities or surface-plasmon polaritions) is necessary to achieve the necessary light confinement for absorption or emission enhancement. Here we propose new paradigm that is non-resonant and therefore broadband and can achieve light confinement and fieldmore » enhancement in extremely small areas [~(λ/500)^2 ]. The proposal is based on a theoretical work[1] performed at Sandia. The paradigm structure consists of a periodic arrangement of connected small and large rectangular slits etched into a metal film named double-groove (DG) structure. The degree of electric field enhancement and power confinement can be controlled by the geometry of the structure. The key operational principle is attributed to quasistatic response of the metal electrons to the incoming electromagnetic field that enables non-resonant broadband behavior. For this exploratory LDRD we have fabricated some test double groove structures to enable verification of quasistatic electronic response in the mid IR through IR optical spectroscopy. We have addressed some processing challenges in DG structure fabrication to enable future design of complex sensor and detector geometries that can utilize its non-resonant field enhancement capabilities.].« less

  16. New directions for nanoscale thermoelectric materials research

    NASA Technical Reports Server (NTRS)

    Dresselhaus, M. S.; Chen, G.; Tang, M. Y.; Yang, R. G.; Lee, H.; Wang, D. Z.; Ren, F.; Fleurial, J. P.; Gogna, P.

    2005-01-01

    Many of the recent advances in enhancing the thermoelectric figure of merit are linked to nanoscale phenomena with both bulk samples containing nanoscale constituents and nanoscale materials exhibiting enhanced thermoelectric performance in their own right. Prior theoretical and experimental proof of principle studies on isolated quantum well and quantum wire samples have now evolved into studies on bulk samples containing nanostructured constituents. In this review, nanostructural composites are shown to exhibit nanostructures and properties that show promise for thermoelectric applications. A review of some of the results obtained to date are presented.

  17. Paving the way to a full chip gate level double patterning application

    NASA Astrophysics Data System (ADS)

    Haffner, Henning; Meiring, Jason; Baum, Zachary; Halle, Scott

    2007-10-01

    Double patterning lithography processes can offer significant yield enhancement for challenging circuit designs. Many decomposition (i.e. the process of dividing the layout design into first and second exposures) techniques are possible, but the focus of this paper is on the use of a secondary "cut" mask to trim away extraneous features left from the first exposure. This approach has the advantage that each exposure only needs to support a subset of critical features (e.g. dense lines with the first exposure, isolated spaces with the second one). The extraneous features ("printing assist features" or PrAFs) are designed to support the process window of critical features much like the role of the subresolution assist features (SRAFs) in conventional processes. However, the printing nature of PrAFs leads to many more design options, and hence a greater process and decomposition parameter exploration space, than are available for SRAFs. A decomposition scheme using PRAFs was developed for a gate level process. A critical driver of the work was to deliver improved across-chip linewidth variation (ACLV) performance versus an optimized single exposure process while providing support for a larger range of critical features. A variety of PRAF techniques were investigated by simulation, with a PrAF scheme similar to standard SRAF rules being chosen as the optimal solution [1]. This paper discusses aspects of the code development for an automated PrAF generation and placement scheme and the subsequent decomposition of a layout into two mask levels. While PrAF placement and decomposition is straightforward for layouts with pitch and orientation restrictions, it becomes rather complex for unrestricted layout styles. Because this higher complexity yields more irregularly shaped PrAFs, mask making becomes another critical driver of the optimum placement and clean-up strategies. Examples are given of how those challenges are met or can be successfully circumvented. During

  18. 3. VIEW OF MECHANICAL GATE LIFTING MECHANISM (MULE) AND GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    3. VIEW OF MECHANICAL GATE LIFTING MECHANISM (MULE) AND GATE RACKS, LOOKING EAST - Nine Mile Hydroelectric Development, Powerhouse, State Highway 291 along Spokane River, Nine Mile Falls, Spokane County, WA

  19. Ferromagnetic domain behavior and phase transition in bilayer manganites investigated at the nanoscale

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Phatak, C.; Petford-Long, A. K.; Zheng, H.

    Understanding the underlying mechanism and phenomenology of colossal magnetoresistance in manganites has largely focused on atomic and nanoscale physics such as double exchange, phase separation, and charge order. Here in this article, we consider a more macroscopic view of manganite materials physics, reporting on the ferromagnetic domain behavior in a bilayer manganite sample with a nominal composition of La 2-2xSr 1+2xMn 2O 7 with x = 0:38, studied using in-situ Lorentz transmission electron microscopy. The role of magnetocrystalline anisotropy on the structure of domain walls was elucidated. On cooling, magnetic domain contrast was seen to appear first at the Curiemore » temperature within the a - b plane. With further reduction in temperature, the change in area fraction of magnetic domains was used to estimate the critical exponent describing the ferromagntic phase transition. Lastly, the ferromagnetic phase transition was accompanied by a distinctive nanoscale granular contrast close to the Curie temperature, which we infer to be related to the presence of ferromagnetic nanoclusters in a paramagnetic matrix, which has not yet been reported in bilayer manganites.« less

  20. Ferromagnetic domain behavior and phase transition in bilayer manganites investigated at the nanoscale

    DOE PAGES

    Phatak, C.; Petford-Long, A. K.; Zheng, H.; ...

    2015-12-14

    Understanding the underlying mechanism and phenomenology of colossal magnetoresistance in manganites has largely focused on atomic and nanoscale physics such as double exchange, phase separation, and charge order. Here in this article, we consider a more macroscopic view of manganite materials physics, reporting on the ferromagnetic domain behavior in a bilayer manganite sample with a nominal composition of La 2-2xSr 1+2xMn 2O 7 with x = 0:38, studied using in-situ Lorentz transmission electron microscopy. The role of magnetocrystalline anisotropy on the structure of domain walls was elucidated. On cooling, magnetic domain contrast was seen to appear first at the Curiemore » temperature within the a - b plane. With further reduction in temperature, the change in area fraction of magnetic domains was used to estimate the critical exponent describing the ferromagntic phase transition. Lastly, the ferromagnetic phase transition was accompanied by a distinctive nanoscale granular contrast close to the Curie temperature, which we infer to be related to the presence of ferromagnetic nanoclusters in a paramagnetic matrix, which has not yet been reported in bilayer manganites.« less

  1. 2. VIEW OF MECHANICAL GATE LIFTING MECHANISM (MULE) AND GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    2. VIEW OF MECHANICAL GATE LIFTING MECHANISM (MULE) AND GATE LIFTING RACKS, LOOKING WEST - Nine Mile Hydroelectric Development, Powerhouse, State Highway 291 along Spokane River, Nine Mile Falls, Spokane County, WA

  2. Gate-tunable transport characteristics of Bi2S3 nanowire transistors

    NASA Astrophysics Data System (ADS)

    Kilcoyne, Colin; Ali, Ahmed H.; Alsaqqa, Ali M.; Rahman, Ajara A.; Whittaker-Brooks, Luisa; Sambandamurthy, Ganapathy

    2018-02-01

    Electrical transport and resistance noise spectroscopy measurements are performed on individual, single crystalline Bi2S3 nanowires in the field-effect geometry. The nanowires exhibit n-type conduction and device characteristics such as activation energy, ON/OFF ratio, and mobility are calculated over a temperature range of 120-320 K and at several bias values. The noise magnitude is measured between 0.01 and 5 Hz at several gate voltages as the device turns from it's OFF to ON state. The presence of mid-gap states which act as charge traps within the band gap can potentially explain the observed transport characteristics. Sulfur vacancies are the likely origin of these mid-gap states which makes Bi2S3 nanowires appealing for defect engineering as a means to enhance its optoelectronic properties and also to better understand the important role of defects in nanoscale semiconductors.

  3. EduGATE - basic examples for educative purpose using the GATE simulation platform.

    PubMed

    Pietrzyk, Uwe; Zakhnini, Abdelhamid; Axer, Markus; Sauerzapf, Sophie; Benoit, Didier; Gaens, Michaela

    2013-02-01

    EduGATE is a collection of basic examples to introduce students to the fundamental physical aspects of medical imaging devices. It is based on the GATE platform, which has received a wide acceptance in the field of simulating medical imaging devices including SPECT, PET, CT and also applications in radiation therapy. GATE can be configured by commands, which are, for the sake of simplicity, listed in a collection of one or more macro files to set up phantoms, multiple types of sources, detection device, and acquisition parameters. The aim of the EduGATE is to use all these helpful features of GATE to provide insights into the physics of medical imaging by means of a collection of very basic and simple GATE macros in connection with analysis programs based on ROOT, a framework for data processing. A graphical user interface to define a configuration is also included. Copyright © 2012. Published by Elsevier GmbH.

  4. Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Condori Quispe, Hugo O.; Sensale-Rodriguez, Berardi; Encomendero-Risco, Jimy J.

    2016-08-08

    We theoretically analyze the operation of a terahertz amplifier consisting of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT) in a grating-gate topology. In these devices, the key element enabling substantial power gain is the efficient coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e., the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as discussed in previous works, therefore potentially enabling terahertz amplification with associated power gains >40 dB.

  5. Age effects on preattentive and early attentive auditory processing of redundant stimuli: is sensory gating affected by physiological aging?

    PubMed

    Gmehlin, Dennis; Kreisel, Stefan H; Bachmann, Silke; Weisbrod, Matthias; Thomas, Christine

    2011-10-01

    The frontal hypothesis of aging predicts an age-related decline in cognitive functions requiring inhibitory or attentional regulation. In Alzheimer's disease, preattentive gating out of redundant information is impaired. Our study aimed to examine changes associated with physiological aging in both pre- and early attentive inhibition of recurrent acoustic information. Using a passive double-click paradigm, we recorded mid-latency (P30-P50) and late-latency (N100 and P200) evoked potentials in healthy young (26 ± 5 years) and healthy elderly subjects (72 ± 5 years). Physiological aging did not affect auditory gating in amplitude measures. Both age groups exhibited clear inhibition in preattentive P50 and attention-modulated (N100) components, whereas P30 was not attenuated. Irrespective of age, the magnitude of inhibition differed significantly, being most pronounced for N100 gating. Inhibition of redundant information seems to be preserved with physiological aging. Early attentive N100 gating showed the maximum effect. Further studies are warranted to evaluate sensory gating as a suitable biomarker of underlying neurodegenerative disease.

  6. Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks

    NASA Astrophysics Data System (ADS)

    Ritzenthaler, R.; Schram, T.; Bury, E.; Spessot, A.; Caillat, C.; Srividya, V.; Sebaai, F.; Mitard, J.; Ragnarsson, L.-Å.; Groeseneken, G.; Horiguchi, N.; Fazan, P.; Thean, A.

    2013-06-01

    In this work, the possibility of integration of High-k/Metal Gate (HKMG), Replacement Metal Gate (RMG) gate stacks for low power DRAM compatible transistors is studied. First, it is shown that RMG gate stacks used for Logic applications need to be seriously reconsidered, because of the additional anneal(s) needed in a DRAM process. New solutions are therefore developed. A PMOS stack HfO2/TiN with TiN deposited in three times combined with Work Function metal oxidations is demonstrated, featuring a very good Work Function of 4.95 eV. On the other hand, the NMOS side is shown to be a thornier problem to solve: a new solution based on the use of oxidized Ta as a diffusion barrier is proposed, and a HfO2/TiN/TaOX/TiAl/TiN/TiN gate stack featuring an aggressive Work Function of 4.35 eV (allowing a Work Function separation of 600 mV between NMOS and PMOS) is demonstrated. This work paves the way toward the integration of gate-last options for DRAM periphery transistors.

  7. Creating nanoscale emulsions using condensation.

    PubMed

    Guha, Ingrid F; Anand, Sushant; Varanasi, Kripa K

    2017-11-08

    Nanoscale emulsions are essential components in numerous products, ranging from processed foods to novel drug delivery systems. Existing emulsification methods rely either on the breakup of larger droplets or solvent exchange/inversion. Here we report a simple, scalable method of creating nanoscale water-in-oil emulsions by condensing water vapor onto a subcooled oil-surfactant solution. Our technique enables a bottom-up approach to forming small-scale emulsions. Nanoscale water droplets nucleate at the oil/air interface and spontaneously disperse within the oil, due to the spreading dynamics of oil on water. Oil-soluble surfactants stabilize the resulting emulsions. We find that the oil-surfactant concentration controls the spreading behavior of oil on water, as well as the peak size, polydispersity, and stability of the resulting emulsions. Using condensation, we form emulsions with peak radii around 100 nm and polydispersities around 10%. This emulsion formation technique may open different routes to creating emulsions, colloidal systems, and emulsion-based materials.

  8. T-gate aligned nanotube radio frequency transistors and circuits with superior performance.

    PubMed

    Che, Yuchi; Lin, Yung-Chen; Kim, Pyojae; Zhou, Chongwu

    2013-05-28

    In this paper, we applied self-aligned T-gate design to aligned carbon nanotube array transistors and achieved an extrinsic current-gain cutoff frequency (ft) of 25 GHz, which is the best on-chip performance for nanotube radio frequency (RF) transistors reported to date. Meanwhile, an intrinsic current-gain cutoff frequency up to 102 GHz is obtained, comparable to the best value reported for nanotube RF transistors. Armed with the excellent extrinsic RF performance, we performed both single-tone and two-tone measurements for aligned nanotube transistors at a frequency up to 8 GHz. Furthermore, we utilized T-gate aligned nanotube transistors to construct mixing and frequency doubling analog circuits operated in gigahertz frequency regime. Our results confirm the great potential of nanotube-based circuit applications and indicate that nanotube transistors are promising building blocks in high-frequency electronics.

  9. Nanoscale thermal transport: Theoretical method and application

    NASA Astrophysics Data System (ADS)

    Zeng, Yu-Jia; Liu, Yue-Yang; Zhou, Wu-Xing; Chen, Ke-Qiu

    2018-03-01

    With the size reduction of nanoscale electronic devices, the heat generated by the unit area in integrated circuits will be increasing exponentially, and consequently the thermal management in these devices is a very important issue. In addition, the heat generated by the electronic devices mostly diffuses to the air in the form of waste heat, which makes the thermoelectric energy conversion also an important issue for nowadays. In recent years, the thermal transport properties in nanoscale systems have attracted increasing attention in both experiments and theoretical calculations. In this review, we will discuss various theoretical simulation methods for investigating thermal transport properties and take a glance at several interesting thermal transport phenomena in nanoscale systems. Our emphasizes will lie on the advantage and limitation of calculational method, and the application of nanoscale thermal transport and thermoelectric property. Project supported by the Nation Key Research and Development Program of China (Grant No. 2017YFB0701602) and the National Natural Science Foundation of China (Grant No. 11674092).

  10. Gate-controlled quantum collimation in nanocolumn resonant tunneling transistors.

    PubMed

    Wensorra, J; Lepsa, M I; Trellenkamp, S; Moers, J; Indlekofer, K M; Lüth, H

    2009-11-18

    Nanoscaled resonant tunneling transistors (RTT) based on MBE-grown GaAs/AlAs double-barrier quantum well (DBQW) structures have been fabricated by a top-down approach using electron-beam lithographic definition of the vertical nanocolumns. In the preparation process, a reproducible mask alignment accuracy of below 10 nm has been achieved and the all-around metal gate at the level of the DBQW structure has been positioned at a distance of about 20 nm relative to the semiconductor nanocolumn. Due to the specific doping profile n++/i/n++ along the transistor nanocolumn, a particular confining potential is established for devices with diameters smaller than 70 nm, which causes a collimation effect of the propagating electrons. Under these conditions, room temperature optimum performance of the nano-RTTs is achieved with peak-to-valley current ratios above 2 and a peak current swing factor of about 6 for gate voltages between -6 and +6 V. These values indicate that our nano-RTTs can be successfully used in low power fast nanoelectronic circuits.

  11. Polymer-electrolyte-gated nanowire synaptic transistors for neuromorphic applications

    NASA Astrophysics Data System (ADS)

    Zou, Can; Sun, Jia; Gou, Guangyang; Kong, Ling-An; Qian, Chuan; Dai, Guozhang; Yang, Junliang; Guo, Guang-hua

    2017-09-01

    Polymer-electrolytes are formed by dissolving a salt in polymer instead of water, the conducting mechanism involves the segmental motion-assisted diffusion of ion in the polymer matrix. Here, we report on the fabrication of tin oxide (SnO2) nanowire synaptic transistors using polymer-electrolyte gating. A thin layer of poly(ethylene oxide) and lithium perchlorate (PEO/LiClO4) was deposited on top of the devices, which was used to boost device performances. A voltage spike applied on the in-plane gate attracts ions toward the polymer-electrolyte/SnO2 nanowire interface and the ions are gradually returned after the pulse is removed, which can induce a dynamic excitatory postsynaptic current in the nanowire channel. The SnO2 synaptic transistors exhibit the behavior of short-term plasticity like the paired-pulse facilitation and self-adaptation, which is related to the electric double-effect regulation. In addition, the synaptic logic functions and the logical function transformation are also discussed. Such single SnO2 nanowire-based synaptic transistors are of great importance for future neuromorphic devices.

  12. Laser-induced dental caries and plaque diagnosis on patients by sensitive autofluorescence spectroscopy and time-gated video imaging: preliminary studies

    NASA Astrophysics Data System (ADS)

    Koenig, Karsten; Schneckenburger, Herbert

    1994-09-01

    The laser-induced in vivo autofluorescence of human teeth was investigated by means of time- resolved/time-gated fluorescence techniques. The aim of these studies was non-contact caries and plaque detection. Carious lesions and dental plaque fluoresce in the red spectral region. This autofluorescence seems to be based on porphyrin-producing bacteria. We report on preliminary studies on patients using a novel method of autofluorescence imaging. A special device was constructed for time-gated video imaging. Nanosecond laser pulses for fluorescence excitation were provided by a frequency-doubled, Q-switched Nd:YAG laser. Autofluorescence was detected in an appropriate nanosecond time window using a video camera with a time-gated image intensifier (minimal time gate: 5 ns). Laser-induced autofluorescence based on porphyrin-producing bacteria seems to be an appropriate tool for detecting dental lesions and for creating `caries-images' and `dental plaque' images.

  13. A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance

    NASA Astrophysics Data System (ADS)

    Kim, Hunho; Kwack, Young-Jin; Yun, Eui-Jung; Choi, Woon-Seop

    2016-09-01

    Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage properties of the zinc-tin oxide (ZTO) TFTs with the combined ZAO dielectrics by using the proposed metal-insulator-semiconductor (MIS) structure model. The capacitance evolution of the semiconductor from the TFT model structure described well the threshold voltage shift observed in the ZTO TFT with the ZAO (1:2) gate dielectric. The electrical properties of the ZTO TFT with a ZAO (1:2) gate dielectric showed low voltage driving with a field effect mobility of 37.01 cm2/Vs, a threshold voltage of 2.00 V, an on-to-off current ratio of 1.46 × 105, and a subthreshold slope of 0.10 V/dec.

  14. A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance

    PubMed Central

    Kim, Hunho; Kwack, Young-Jin; Yun, Eui-Jung; Choi, Woon-Seop

    2016-01-01

    Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage properties of the zinc-tin oxide (ZTO) TFTs with the combined ZAO dielectrics by using the proposed metal-insulator-semiconductor (MIS) structure model. The capacitance evolution of the semiconductor from the TFT model structure described well the threshold voltage shift observed in the ZTO TFT with the ZAO (1:2) gate dielectric. The electrical properties of the ZTO TFT with a ZAO (1:2) gate dielectric showed low voltage driving with a field effect mobility of 37.01 cm2/Vs, a threshold voltage of 2.00 V, an on-to-off current ratio of 1.46 × 105, and a subthreshold slope of 0.10 V/dec. PMID:27641430

  15. Ionic liquid versus SiO 2 gated a-IGZO thin film transistors: A direct comparison

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.

    Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO 2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~10 5, a promising field effect mobility of 14.20 cm 2V –1s –1,more » and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm 2V –1s –1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.« less

  16. Ionic liquid versus SiO 2 gated a-IGZO thin film transistors: A direct comparison

    DOE PAGES

    Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; ...

    2015-08-12

    Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO 2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~10 5, a promising field effect mobility of 14.20 cm 2V –1s –1,more » and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm 2V –1s –1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.« less

  17. Effect of nanocomposite gate-dielectric properties on pentacene microstructure and field-effect transistor characteristics.

    PubMed

    Lee, Wen-Hsi; Wang, Chun-Chieh

    2010-02-01

    In this study, the effect of surface energy and roughness of the nanocomposite gate dielectric on pentacene morphology and electrical properties of pentacene OTFT are reported. Nanoparticles TiO2 were added in the polyimide matrix to form a nanocomposite which has a significantly different surface characteristic from polyimide, leading to a discrepancy in the structural properties of pentacene growth. A growth mode of pentacene deposited on the nanocomposite is proposed to explain successfully the effect of surface properties of nanocomposite gate dielectric such as surface energy and roughness on the pentacene morphology and electrical properties of OTFT. To obtain the lower surface energy and smoother surface of nanocomposite gate dielectric that is responsible for the desired crystalline, microstructure of pentacene and electrical properties of device, a bottom contact OTFT-pentacene deposited on the double-layer nanocomposite gate dielectric consisting of top smoothing layer of the neat polyimide and bottom layer of (PI+ nano-TiO2 particles) nanocomposite has been successfully demonstrated to exhibit very promising performance including high current on to off ratio of about 6 x 10(5), threshold voltage of -10 V and moderately high filed mobility of 0.15 cm2V(-1)s(-1).

  18. Deletion of cytosolic gating ring decreases gate and voltage sensor coupling in BK channels.

    PubMed

    Zhang, Guohui; Geng, Yanyan; Jin, Yakang; Shi, Jingyi; McFarland, Kelli; Magleby, Karl L; Salkoff, Lawrence; Cui, Jianmin

    2017-03-06

    Large conductance Ca 2+ -activated K + channels (BK channels) gate open in response to both membrane voltage and intracellular Ca 2+ The channel is formed by a central pore-gate domain (PGD), which spans the membrane, plus transmembrane voltage sensors and a cytoplasmic gating ring that acts as a Ca 2+ sensor. How these voltage and Ca 2+ sensors influence the common activation gate, and interact with each other, is unclear. A previous study showed that a BK channel core lacking the entire cytoplasmic gating ring (Core-MT) was devoid of Ca 2+ activation but retained voltage sensitivity (Budelli et al. 2013. Proc. Natl. Acad. Sci. USA http://dx.doi.org/10.1073/pnas.1313433110). In this study, we measure voltage sensor activation and pore opening in this Core-MT channel over a wide range of voltages. We record gating currents and find that voltage sensor activation in this truncated channel is similar to WT but that the coupling between voltage sensor activation and gating of the pore is reduced. These results suggest that the gating ring, in addition to being the Ca 2+ sensor, enhances the effective coupling between voltage sensors and the PGD. We also find that removal of the gating ring alters modulation of the channels by the BK channel's β1 and β2 subunits. © 2017 Zhang et al.

  19. Deletion of cytosolic gating ring decreases gate and voltage sensor coupling in BK channels

    PubMed Central

    Zhang, Guohui; Shi, Jingyi; McFarland, Kelli; Magleby, Karl L.; Salkoff, Lawrence

    2017-01-01

    Large conductance Ca2+-activated K+ channels (BK channels) gate open in response to both membrane voltage and intracellular Ca2+. The channel is formed by a central pore-gate domain (PGD), which spans the membrane, plus transmembrane voltage sensors and a cytoplasmic gating ring that acts as a Ca2+ sensor. How these voltage and Ca2+ sensors influence the common activation gate, and interact with each other, is unclear. A previous study showed that a BK channel core lacking the entire cytoplasmic gating ring (Core-MT) was devoid of Ca2+ activation but retained voltage sensitivity (Budelli et al. 2013. Proc. Natl. Acad. Sci. USA. http://dx.doi.org/10.1073/pnas.1313433110). In this study, we measure voltage sensor activation and pore opening in this Core-MT channel over a wide range of voltages. We record gating currents and find that voltage sensor activation in this truncated channel is similar to WT but that the coupling between voltage sensor activation and gating of the pore is reduced. These results suggest that the gating ring, in addition to being the Ca2+ sensor, enhances the effective coupling between voltage sensors and the PGD. We also find that removal of the gating ring alters modulation of the channels by the BK channel’s β1 and β2 subunits. PMID:28196879

  20. DNA logic gate based on metallo-toehold strand displacement.

    PubMed

    Deng, Wei; Xu, Huaguo; Ding, Wei; Liang, Haojun

    2014-01-01

    DNA is increasingly being used as an ideal material for the construction of nanoscale structures, circuits, and machines. Toehold-mediated DNA strand displacement reactions play a very important role in these enzyme-free constructions. In this study, the concept of metallo-toehold was utilized to further develop a mechanism for strand displacement driven by Ag+ ions, in which the intercalation of cytosine-cytosine mismatched base pairs on the toeholds provides additional control by varying of the concentration of Ag+ ions. The characteristics of displacement reaction in response to different concentration of Ag+ ions are investigated by fluorescence spectral and non-denaturing polyacrylamide gel electrophoresis. The reaction can successfully occur when the concentration of Ag+ ions is suitabe; excess Ag+ ions block the reaction. Furthermore, the displacement reaction can be tuned and controlled most efficiently under the condition of two C:C mismatched base pairs placed on the six-nt toehold. Based on our research, a mechanism was developed to construct Boolean logic gate AND and OR by employing strand displacement reaction as a tool, Ag+ and Hg2+ as input.

  1. Advanced insulated gate bipolar transistor gate drive

    DOEpatents

    Short, James Evans [Monongahela, PA; West, Shawn Michael [West Mifflin, PA; Fabean, Robert J [Donora, PA

    2009-08-04

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  2. Improved scatterer property estimates from ultrasound backscatter for small gate lengths using a gate-edge correction factor

    NASA Astrophysics Data System (ADS)

    Oelze, Michael L.; O'Brien, William D.

    2004-11-01

    Backscattered rf signals used to construct conventional ultrasound B-mode images contain frequency-dependent information that can be examined through the backscattered power spectrum. The backscattered power spectrum is found by taking the magnitude squared of the Fourier transform of a gated time segment corresponding to a region in the scattering volume. When a time segment is gated, the edges of the gated regions change the frequency content of the backscattered power spectrum due to truncating of the waveform. Tapered windows, like the Hanning window, and longer gate lengths reduce the relative contribution of the gate-edge effects. A new gate-edge correction factor was developed that partially accounted for the edge effects. The gate-edge correction factor gave more accurate estimates of scatterer properties at small gate lengths compared to conventional windowing functions. The gate-edge correction factor gave estimates of scatterer properties within 5% of actual values at very small gate lengths (less than 5 spatial pulse lengths) in both simulations and from measurements on glass-bead phantoms. While the gate-edge correction factor gave higher accuracy of estimates at smaller gate lengths, the precision of estimates was not improved at small gate lengths over conventional windowing functions. .

  3. Nanoscale tissue engineering: spatial control over cell-materials interactions

    PubMed Central

    Wheeldon, Ian; Farhadi, Arash; Bick, Alexander G.; Jabbari, Esmaiel; Khademhosseini, Ali

    2011-01-01

    Cells interact with the surrounding environment by making tens to hundreds of thousands of nanoscale interactions with extracellular signals and features. The goal of nanoscale tissue engineering is to harness the interactions through nanoscale biomaterials engineering in order to study and direct cellular behaviors. Here, we review the nanoscale tissue engineering technologies for both two- and three-dimensional studies (2- and 3D), and provide a holistic overview of the field. Techniques that can control the average spacing and clustering of cell adhesion ligands are well established and have been highly successful in describing cell adhesion and migration in 2D. Extension of these engineering tools to 3D biomaterials has created many new hydrogel and nanofiber scaffolds technologies that are being used to design in vitro experiments with more physiologically relevant conditions. Researchers are beginning to study complex cell functions in 3D, however, there is a need for biomaterials systems that provide fine control over the nanoscale presentation of bioactive ligands in 3D. Additionally, there is a need for 2- and 3D techniques that can control the nanoscale presentation of multiple bioactive ligands and the temporal changes in cellular microenvironment. PMID:21451238

  4. Surface Modification of Solution-Processed ZrO2 Films through Double Coating for Pentacene Thin-Film Transistors

    NASA Astrophysics Data System (ADS)

    Kwon, Jin-Hyuk; Bae, Jin-Hyuk; Lee, Hyeonju; Park, Jaehoon

    2018-03-01

    We report the modification of surface properties of solution-processed zirconium oxide (ZrO2) dielectric films achieved by using double-coating process. It is proven that the surface properties of the ZrO2 film are modified through the double-coating process; the surface roughness decreases and the surface energy increases. The present surface modification of the ZrO2 film contributes to an increase in grain size of the pentacene film, thereby increasing the field-effect mobility and decreasing the threshold voltage of the pentacene thin-film transistors (TFTs) having the ZrO2 gate dielectric. Herein, the molecular orientation of pentacene film is also studied based on the results of contact angle and X-ray diffraction measurements. Pentacene molecules on the double-coated ZrO2 film are found to be more tilted than those on the single-coated ZrO2 film, which is attributed to the surface modification of the ZrO2 film. However, no significant differences are observed in insulating properties between the single-and the double-coated ZrO2 dielectric films. Consequently, the characteristic improvements of the pentacene TFTs with the double-coated ZrO2 gate dielectric film can be understood through the increase in pentacene grain size and the reduction in grain boundary density.

  5. Actions and Mechanisms of Polyunsaturated Fatty Acids on Voltage-Gated Ion Channels.

    PubMed

    Elinder, Fredrik; Liin, Sara I

    2017-01-01

    Polyunsaturated fatty acids (PUFAs) act on most ion channels, thereby having significant physiological and pharmacological effects. In this review we summarize data from numerous PUFAs on voltage-gated ion channels containing one or several voltage-sensor domains, such as voltage-gated sodium (Na V ), potassium (K V ), calcium (Ca V ), and proton (H V ) channels, as well as calcium-activated potassium (K Ca ), and transient receptor potential (TRP) channels. Some effects of fatty acids appear to be channel specific, whereas others seem to be more general. Common features for the fatty acids to act on the ion channels are at least two double bonds in cis geometry and a charged carboxyl group. In total we identify and label five different sites for the PUFAs. PUFA site 1 : The intracellular cavity. Binding of PUFA reduces the current, sometimes as a time-dependent block, inducing an apparent inactivation. PUFA site 2 : The extracellular entrance to the pore. Binding leads to a block of the channel. PUFA site 3 : The intracellular gate. Binding to this site can bend the gate open and increase the current. PUFA site 4 : The interface between the extracellular leaflet of the lipid bilayer and the voltage-sensor domain. Binding to this site leads to an opening of the channel via an electrostatic attraction between the negatively charged PUFA and the positively charged voltage sensor. PUFA site 5 : The interface between the extracellular leaflet of the lipid bilayer and the pore domain. Binding to this site affects slow inactivation. This mapping of functional PUFA sites can form the basis for physiological and pharmacological modifications of voltage-gated ion channels.

  6. Actions and Mechanisms of Polyunsaturated Fatty Acids on Voltage-Gated Ion Channels

    PubMed Central

    Elinder, Fredrik; Liin, Sara I.

    2017-01-01

    Polyunsaturated fatty acids (PUFAs) act on most ion channels, thereby having significant physiological and pharmacological effects. In this review we summarize data from numerous PUFAs on voltage-gated ion channels containing one or several voltage-sensor domains, such as voltage-gated sodium (NaV), potassium (KV), calcium (CaV), and proton (HV) channels, as well as calcium-activated potassium (KCa), and transient receptor potential (TRP) channels. Some effects of fatty acids appear to be channel specific, whereas others seem to be more general. Common features for the fatty acids to act on the ion channels are at least two double bonds in cis geometry and a charged carboxyl group. In total we identify and label five different sites for the PUFAs. PUFA site 1: The intracellular cavity. Binding of PUFA reduces the current, sometimes as a time-dependent block, inducing an apparent inactivation. PUFA site 2: The extracellular entrance to the pore. Binding leads to a block of the channel. PUFA site 3: The intracellular gate. Binding to this site can bend the gate open and increase the current. PUFA site 4: The interface between the extracellular leaflet of the lipid bilayer and the voltage-sensor domain. Binding to this site leads to an opening of the channel via an electrostatic attraction between the negatively charged PUFA and the positively charged voltage sensor. PUFA site 5: The interface between the extracellular leaflet of the lipid bilayer and the pore domain. Binding to this site affects slow inactivation. This mapping of functional PUFA sites can form the basis for physiological and pharmacological modifications of voltage-gated ion channels. PMID:28220076

  7. DIFMOS - A floating-gate electrically erasable nonvolatile semiconductor memory technology. [Dual Injector Floating-gate MOS

    NASA Technical Reports Server (NTRS)

    Gosney, W. M.

    1977-01-01

    Electrically alterable read-only memories (EAROM's) or reprogrammable read-only memories (RPROM's) can be fabricated using a single-level metal-gate p-channel MOS technology with all conventional processing steps. Given the acronym DIFMOS for dual-injector floating-gate MOS, this technology utilizes the floating-gate technique for nonvolatile storage of data. Avalanche injection of hot electrons through gate oxide from a special injector diode in each bit is used to charge the floating gates. A second injector structure included in each bit permits discharge of the floating gate by avalanche injection of holes through gate oxide. The overall design of the DIFMOS bit is dictated by the physical considerations required for each of the avalanche injector types. The end result is a circuit technology which can provide fully decoded bit-erasable EAROM-type circuits using conventional manufacturing techniques.

  8. Traceable nanoscale measurement at NML-SIRIM

    NASA Astrophysics Data System (ADS)

    Dahlan, Ahmad M.; Abdul Hapip, A. I.

    2012-06-01

    The role of national metrology institute (NMI) has always been very crucial in national technology development. One of the key activities of the NMI is to provide traceable measurement in all parameters under the International System of Units (SI). Dimensional measurement where size and shape are two important features investigated, is one of the important area covered by NMIs. To support the national technology development, particularly in manufacturing sectors and emerging technology such nanotechnology, the National Metrology Laboratory, SIRIM Berhad (NML-SIRIM), has embarked on a project to equip Malaysia with state-of-the-art nanoscale measurement facility with the aims of providing traceability of measurement at nanoscale. This paper will look into some of the results from current activities at NML-SIRIM related to measurement at nanoscale particularly on application of atomic force microscope (AFM) and laser based sensor in dimensional measurement. Step height standards of different sizes were measured using AFM and laser-based sensors. These probes are integrated into a long-range nanoscale measuring machine traceable to the international definition of the meter thus ensuring their traceability. Consistency of results obtained by these two methods will be discussed and presented. Factors affecting their measurements as well as their related uncertainty of measurements will also be presented.

  9. Neuromorphic computing with nanoscale spintronic oscillators.

    PubMed

    Torrejon, Jacob; Riou, Mathieu; Araujo, Flavio Abreu; Tsunegi, Sumito; Khalsa, Guru; Querlioz, Damien; Bortolotti, Paolo; Cros, Vincent; Yakushiji, Kay; Fukushima, Akio; Kubota, Hitoshi; Yuasa, Shinji; Stiles, Mark D; Grollier, Julie

    2017-07-26

    Neurons in the brain behave as nonlinear oscillators, which develop rhythmic activity and interact to process information. Taking inspiration from this behaviour to realize high-density, low-power neuromorphic computing will require very large numbers of nanoscale nonlinear oscillators. A simple estimation indicates that to fit 10 8 oscillators organized in a two-dimensional array inside a chip the size of a thumb, the lateral dimension of each oscillator must be smaller than one micrometre. However, nanoscale devices tend to be noisy and to lack the stability that is required to process data in a reliable way. For this reason, despite multiple theoretical proposals and several candidates, including memristive and superconducting oscillators, a proof of concept of neuromorphic computing using nanoscale oscillators has yet to be demonstrated. Here we show experimentally that a nanoscale spintronic oscillator (a magnetic tunnel junction) can be used to achieve spoken-digit recognition with an accuracy similar to that of state-of-the-art neural networks. We also determine the regime of magnetization dynamics that leads to the greatest performance. These results, combined with the ability of the spintronic oscillators to interact with each other, and their long lifetime and low energy consumption, open up a path to fast, parallel, on-chip computation based on networks of oscillators.

  10. Impact of gate geometry on ionic liquid gated ionotronic systems

    DOE PAGES

    Wong, Anthony T.; Noh, Joo Hyon; Pudasaini, Pushpa Raj; ...

    2017-01-23

    Ionic liquid electrolytes are gaining widespread application as a gate dielectric used to control ion transport in functional materials. This letter systematically examines the important influence that device geometry in standard “side gate” 3-terminal geometries plays in device performance of a well-known oxygen ion conductor. We show that the most influential component of device design is the ratio between the area of the gate electrode and the active channel, while the spacing between these components and their individual shapes has a negligible contribution. Finally, these findings provide much needed guidance in device design intended for ionotronic gating with ionic liquids.

  11. Bench-scale synthesis of nanoscale materials

    NASA Technical Reports Server (NTRS)

    Buehler, M. F.; Darab, J. G.; Matson, D. W.; Linehan, J. C.

    1994-01-01

    A novel flow-through hydrothermal method used to synthesize nanoscale powders is introduced by Pacific Northwest Laboratory. The process, Rapid Thermal Decomposition of precursors in Solution (RTDS), uniquely combines high-pressure and high-temperature conditions to rapidly form nanoscale particles. The RTDS process was initially demonstrated on a laboratory scale and was subsequently scaled up to accommodate production rates attractive to industry. The process is able to produce a wide variety of metal oxides and oxyhydroxides. The powders are characterized by scanning and transmission electron microscopic methods, surface-area measurements, and x-ray diffraction. Typical crystallite sizes are less than 20 nanometers, with BET surface areas ranging from 100 to 400 sq m/g. A description of the RTDS process is presented along with powder characterization results. In addition, data on the sintering of nanoscale ZrO2 produced by RTDS are included.

  12. Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment.

    PubMed

    Porrazzo, Rossella; Luzio, Alessandro; Bellani, Sebastiano; Bonacchini, Giorgio Ernesto; Noh, Yong-Young; Kim, Yun-Hi; Lanzani, Guglielmo; Antognazza, Maria Rosa; Caironi, Mario

    2017-01-31

    The first demonstration of an n-type water-gated organic field-effect transistor (WGOFET) is here reported, along with simple water-gated complementary integrated circuits, in the form of inverting logic gates. For the n-type WGOFET active layer, high-electron-affinity organic semiconductors, including naphthalene diimide co-polymers and a soluble fullerene derivative, have been compared, with the latter enabling a high electric double layer capacitance in the range of 1 μF cm -2 in full accumulation and a mobility-capacitance product of 7 × 10 -3 μF/V s. Short-term stability measurements indicate promising cycling robustness, despite operating the device in an environment typically considered harsh, especially for electron-transporting organic molecules. This work paves the way toward advanced circuitry design for signal conditioning and actuation in an aqueous environment and opens new perspectives in the implementation of active bio-organic interfaces for biosensing and neuromodulation.

  13. Organic Field Effect Transistor Using Amorphous Fluoropolymer as Gate Insulating Film

    NASA Astrophysics Data System (ADS)

    Kitajima, Yosuke; Kojima, Kenzo; Mizutani, Teruyoshi; Ochiai, Shizuyasu

    Organic field effect transistors are fabricated by the active layer of Regioregular poly (3-hexylthiophene-2,5-diy)(P3HT) thin film. CYTOP thin film made from Amorphous Fluoropolymer and fabricated by spin-coating is adopted to a gate dielectric layer on Polyethylenenaphthalate (PEN) thin film that is the substrate of an organic field effect transistor. The surface morphology and molecular orientation of P3HT thin films is observed by atomic force microscope (AFM) and X-Ray diffractometer (XRD). Grains are observed on the CYTOP thin film via an AFM image and the P3HT molecule is oriented perpendicularly on the CYTOP thin film. Based on the performance of the organic field effect transistor, the carrier mobility is 0.092 cm2/Vs, the ON/OFF ratio is 7, and the threshold voltage is -12 V. The ON/OFF ratio is relatively low and to improve On/Off ratio, the CYTOP/Polyimide double gate insulating layer is adopted to OFET.

  14. The four-gate transistor

    NASA Technical Reports Server (NTRS)

    Mojarradi, M. M.; Cristoveanu, S.; Allibert, F.; France, G.; Blalock, B.; Durfrene, B.

    2002-01-01

    The four-gate transistor or G4-FET combines MOSFET and JFET principles in a single SOI device. Experimental results reveal that each gate can modulate the drain current. Numerical simulations are presented to clarify the mechanisms of operation. The new device shows enhanced functionality, due to the combinatorial action of the four gates, and opens rather revolutionary applications.

  15. All-optical XOR logic gate using intersubband transition in III-V quantum well materials.

    PubMed

    Feng, Jijun; Akimoto, Ryoichi; Gozu, Shin-ichiro; Mozume, Teruo

    2014-06-02

    A monolithically integrated all-optical exclusive-OR (XOR) logic gate is experimentally demonstrated based on a Michelson interferometer (MI) gating device in InGaAs/AlAsSb coupled double quantum wells (CDQWs). The MI arms can convert the pump data with return-to-zero ON-OFF keying (RZ OOK) to binary phase-shift keying (BPSK) format, then two BPSK signals can interfere with each other for realizing a desired logical operation. All-optical format conversion from the RZ OOK to BPSK is based on the cross-phase modulation to the transverse electric (TE) probe wave, which is caused by the intersubband transition excited by the transverse magnetic (TM) pump light. Bit error rate measurements show that error free operation for both BPSK format conversion and XOR logical operation can be achieved.

  16. 12. INTERIOR VIEW OF GATE OPERATOR ROOM, SHOWING SLIDES GATE ...

    Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

    12. INTERIOR VIEW OF GATE OPERATOR ROOM, SHOWING SLIDES GATE OPERATORS, LOOKING NORTHWEST. - Sacramento River Water Treatment Plant Intake Pier & Access Bridge, Spanning Sacramento River approximately 175 feet west of eastern levee on river; roughly .5 mile downstream from confluence of Sacramento & American Rivers, Sacramento, Sacramento County, CA

  17. Reading Gate Positions with a Smartphone

    NASA Astrophysics Data System (ADS)

    van Overloop, Peter-Jules; Hut, Rolf

    2015-04-01

    Worldwide many flow gates are built in water networks in order to direct water to appropriate locations. Most of these gates are adjusted manually by field operators of water management organizations and it is often centrally not known what the new position of the gate is. This makes centralized management of the entire water network difficult. One of the reasons why the measurement of the gate position is usually not executed, is that for certain gates it is not easy to do such a reading. Tilting weirs or radial gates are examples where operators need special equipment (measuring rod and long level) to determine the position and it could even be a risky procedure. Another issue is that once the measurement is done, the value is jotted down in a notebook and later, at the office, entered in a computer system. So the entire monitoring procedure is not real-time and prone to human errors. A new way of monitoring gate positions is introduced. It consists of a level that is attached to the gate and an app with which a picture can be taken from the level. Using dedicated pattern recognition algorithms, the gate position can be read by using the angle of the level versus reference points on the gate, the radius of that gate and the absolute level of the joint around which the gate turn. The method uses gps-localization of the smartphone to store the gate position in the right location in the central database.

  18. Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II-VI Gate Insulators

    NASA Astrophysics Data System (ADS)

    Jain, F. C.; Suarez, E.; Gogna, M.; Alamoody, F.; Butkiewicus, D.; Hohner, R.; Liaskas, T.; Karmakar, S.; Chan, P.-Y.; Miller, B.; Chandy, J.; Heller, E.

    2009-08-01

    This paper presents the successful use of ZnS/ZnMgS and other II-VI layers (lattice-matched or pseudomorphic) as high- k gate dielectrics in the fabrication of quantum dot (QD) gate Si field-effect transistors (FETs) and nonvolatile memory structures. Quantum dot gate FETs and nonvolatile memories have been fabricated in two basic configurations: (1) monodispersed cladded Ge nanocrystals (e.g., GeO x -cladded-Ge quantum dots) site-specifically self-assembled over the lattice-matched ZnMgS gate insulator in the channel region, and (2) ZnTe-ZnMgTe quantum dots formed by self-organization, using metalorganic chemical vapor-phase deposition (MOCVD), on ZnS-ZnMgS gate insulator layers grown epitaxially on Si substrates. Self-assembled GeO x -cladded Ge QD gate FETs, exhibiting three-state behavior, are also described. Preliminary results on InGaAs-on-InP FETs, using ZnMgSeTe/ZnSe gate insulator layers, are presented.

  19. Efficient Z gates for quantum computing

    NASA Astrophysics Data System (ADS)

    McKay, David C.; Wood, Christopher J.; Sheldon, Sarah; Chow, Jerry M.; Gambetta, Jay M.

    2017-08-01

    For superconducting qubits, microwave pulses drive rotations around the Bloch sphere. The phase of these drives can be used to generate zero-duration arbitrary virtual Z gates, which, combined with two Xπ /2 gates, can generate any SU(2) gate. Here we show how to best utilize these virtual Z gates to both improve algorithms and correct pulse errors. We perform randomized benchmarking using a Clifford set of Hadamard and Z gates and show that the error per Clifford is reduced versus a set consisting of standard finite-duration X and Y gates. Z gates can correct unitary rotation errors for weakly anharmonic qubits as an alternative to pulse-shaping techniques such as derivative removal by adiabatic gate (DRAG). We investigate leakage and show that a combination of DRAG pulse shaping to minimize leakage and Z gates to correct rotation errors realizes a 13.3 ns Xπ /2 gate characterized by low error [1.95 (3 ) ×10-4] and low leakage [3.1 (6 ) ×10-6] . Ultimately leakage is limited by the finite temperature of the qubit, but this limit is two orders of magnitude smaller than pulse errors due to decoherence.

  20. Two-dimensional analytical model of double-gate tunnel FETs with interface trapped charges including effects of channel mobile charge carriers

    NASA Astrophysics Data System (ADS)

    Xu, Huifang; Dai, Yuehua

    2017-02-01

    A two-dimensional analytical model of double-gate (DG) tunneling field-effect transistors (TFETs) with interface trapped charges is proposed in this paper. The influence of the channel mobile charges on the potential profile is also taken into account in order to improve the accuracy of the models. On the basis of potential profile, the electric field is derived and the expression for the drain current is obtained by integrating the BTBT generation rate. The model can be used to study the impact of interface trapped charges on the surface potential, the shortest tunneling length, the drain current and the threshold voltage for varying interface trapped charge densities, length of damaged region as well as the structural parameters of the DG TFET and can also be utilized to design the charge trapped memory devices based on TFET. The biggest advantage of this model is that it is more accurate, and in its expression there are no fitting parameters with small calculating amount. Very good agreements for both the potential, drain current and threshold voltage are observed between the model calculations and the simulated results. Project supported by the National Natural Science Foundation of China (No. 61376106), the University Natural Science Research Key Project of Anhui Province (No. KJ2016A169), and the Introduced Talents Project of Anhui Science and Technology University.

  1. Nanoscale platforms for messenger RNA delivery.

    PubMed

    Li, Bin; Zhang, Xinfu; Dong, Yizhou

    2018-05-04

    Messenger RNA (mRNA) has become a promising class of drugs for diverse therapeutic applications in the past few years. A series of clinical trials are ongoing or will be initiated in the near future for the treatment of a variety of diseases. Currently, mRNA-based therapeutics mainly focuses on ex vivo transfection and local administration in clinical studies. Efficient and safe delivery of therapeutically relevant mRNAs remains one of the major challenges for their broad applications in humans. Thus, effective delivery systems are urgently needed to overcome this limitation. In recent years, numerous nanoscale biomaterials have been constructed for mRNA delivery in order to protect mRNA from extracellular degradation and facilitate endosomal escape after cellular uptake. Nanoscale platforms have expanded the feasibility of mRNA-based therapeutics, and enabled its potential applications to protein replacement therapy, cancer immunotherapy, therapeutic vaccines, regenerative medicine, and genome editing. This review focuses on recent advances, challenges, and future directions in nanoscale platforms designed for mRNA delivery, including lipid and lipid-derived nanoparticles, polymer-based nanoparticles, protein derivatives mRNA complexes, and other types of nanomaterials. This article is categorized under: Nanotechnology Approaches to Biology > Nanoscale Systems in Biology Biology-Inspired Nanomaterials > Lipid-Based Structures Biology-Inspired Nanomaterials > Nucleic Acid-Based Structures. © 2018 Wiley Periodicals, Inc.

  2. In operando evidence of deoxygenation in ionic liquid gating of YBa2Cu3O7-X

    PubMed Central

    Perez-Muñoz, Ana M.; Schio, Pedro; Poloni, Roberta; Fernandez-Martinez, Alejandro; Rivera-Calzada, Alberto; Salas-Colera, Eduardo; Kinney, Joseph; Leon, Carlos; Santamaria, Jacobo; Garcia-Barriocanal, Javier; Goldman, Allen M.

    2017-01-01

    Field-effect experiments on cuprates using ionic liquids have enabled the exploration of their rich phase diagrams [Leng X, et al. (2011) Phys Rev Lett 107(2):027001]. Conventional understanding of the electrostatic doping is in terms of modifications of the charge density to screen the electric field generated at the double layer. However, it has been recently reported that the suppression of the metal to insulator transition induced in VO2 by ionic liquid gating is due to oxygen vacancy formation rather than to electrostatic doping [Jeong J, et al. (2013) Science 339(6126):1402–1405]. These results underscore the debate on the true nature, electrostatic vs. electrochemical, of the doping of cuprates with ionic liquids. Here, we address the doping mechanism of the high-temperature superconductor YBa2Cu3O7-X (YBCO) by simultaneous ionic liquid gating and X-ray absorption experiments. Pronounced spectral changes are observed at the Cu K-edge concomitant with the superconductor-to-insulator transition, evidencing modification of the Cu coordination resulting from the deoxygenation of the CuO chains, as confirmed by first-principles density functional theory (DFT) simulations. Beyond providing evidence of the importance of chemical doping in electric double-layer (EDL) gating experiments with superconducting cuprates, our work shows that interfacing correlated oxides with ionic liquids enables a delicate control of oxygen content, paving the way to novel electrochemical concepts in future oxide electronics. PMID:28028236

  3. In operando evidence of deoxygenation in ionic liquid gating of YBa2Cu3O7-X.

    PubMed

    Perez-Muñoz, Ana M; Schio, Pedro; Poloni, Roberta; Fernandez-Martinez, Alejandro; Rivera-Calzada, Alberto; Cezar, Julio C; Salas-Colera, Eduardo; Castro, German R; Kinney, Joseph; Leon, Carlos; Santamaria, Jacobo; Garcia-Barriocanal, Javier; Goldman, Allen M

    2017-01-10

    Field-effect experiments on cuprates using ionic liquids have enabled the exploration of their rich phase diagrams [Leng X, et al. (2011) Phys Rev Lett 107(2):027001]. Conventional understanding of the electrostatic doping is in terms of modifications of the charge density to screen the electric field generated at the double layer. However, it has been recently reported that the suppression of the metal to insulator transition induced in VO 2 by ionic liquid gating is due to oxygen vacancy formation rather than to electrostatic doping [Jeong J, et al. (2013) Science 339(6126):1402-1405]. These results underscore the debate on the true nature, electrostatic vs. electrochemical, of the doping of cuprates with ionic liquids. Here, we address the doping mechanism of the high-temperature superconductor YBa 2 Cu 3 O 7-X (YBCO) by simultaneous ionic liquid gating and X-ray absorption experiments. Pronounced spectral changes are observed at the Cu K-edge concomitant with the superconductor-to-insulator transition, evidencing modification of the Cu coordination resulting from the deoxygenation of the CuO chains, as confirmed by first-principles density functional theory (DFT) simulations. Beyond providing evidence of the importance of chemical doping in electric double-layer (EDL) gating experiments with superconducting cuprates, our work shows that interfacing correlated oxides with ionic liquids enables a delicate control of oxygen content, paving the way to novel electrochemical concepts in future oxide electronics.

  4. Design of surface modifications for nanoscale sensor applications.

    PubMed

    Reimhult, Erik; Höök, Fredrik

    2015-01-14

    Nanoscale biosensors provide the possibility to miniaturize optic, acoustic and electric sensors to the dimensions of biomolecules. This enables approaching single-molecule detection and new sensing modalities that probe molecular conformation. Nanoscale sensors are predominantly surface-based and label-free to exploit inherent advantages of physical phenomena allowing high sensitivity without distortive labeling. There are three main criteria to be optimized in the design of surface-based and label-free biosensors: (i) the biomolecules of interest must bind with high affinity and selectively to the sensitive area; (ii) the biomolecules must be efficiently transported from the bulk solution to the sensor; and (iii) the transducer concept must be sufficiently sensitive to detect low coverage of captured biomolecules within reasonable time scales. The majority of literature on nanoscale biosensors deals with the third criterion while implicitly assuming that solutions developed for macroscale biosensors to the first two, equally important, criteria are applicable also to nanoscale sensors. We focus on providing an introduction to and perspectives on the advanced concepts for surface functionalization of biosensors with nanosized sensor elements that have been developed over the past decades (criterion (iii)). We review in detail how patterning of molecular films designed to control interactions of biomolecules with nanoscale biosensor surfaces creates new possibilities as well as new challenges.

  5. Optical XOR gate

    DOEpatents

    Vawter, G. Allen

    2013-11-12

    An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  6. Optical NOR gate

    DOEpatents

    Skogen, Erik J [Albuquerque, NM; Tauke-Pedretti, Anna [Albuquerque, NM

    2011-09-06

    An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  7. Scalable photonic quantum computing assisted by quantum-dot spin in double-sided optical microcavity.

    PubMed

    Wei, Hai-Rui; Deng, Fu-Guo

    2013-07-29

    We investigate the possibility of achieving scalable photonic quantum computing by the giant optical circular birefringence induced by a quantum-dot spin in a double-sided optical microcavity as a result of cavity quantum electrodynamics. We construct a deterministic controlled-not gate on two photonic qubits by two single-photon input-output processes and the readout on an electron-medium spin confined in an optical resonant microcavity. This idea could be applied to multi-qubit gates on photonic qubits and we give the quantum circuit for a three-photon Toffoli gate. High fidelities and high efficiencies could be achieved when the side leakage to the cavity loss rate is low. It is worth pointing out that our devices work in both the strong and the weak coupling regimes.

  8. Self-Gated Late Gadolinium Enhancement at 7T to Image Rats with Reperfused Acute Myocardial Infarction.

    PubMed

    Wang, Lei; Chen, Yushu; Zhang, Bing; Chen, Wei; Wang, Chunhua; Song, Li; Xu, Ziqian; Zheng, Jie; Gao, Fabao

    2018-01-01

    A failed electrocardiography (ECG)-trigger often leads to a long acquisition time (TA) and deterioration in image quality. The purpose of this study was to evaluate and optimize the technique of self-gated (SG) cardiovascular magnetic resonance (CMR) for cardiac late gadolinium enhancement (LGE) imaging of rats with myocardial infarction/reperfusion. Cardiovascular magnetic resonance images of 10 rats were obtained using SG-LGE or ECG with respiration double-gating (ECG-RESP-gating) method at 7T to compare differences in image interference and TA between the two methods. A variety of flip angles (FA: 10°-80°) and the number of repetitions (NR: 40, 80, 150, and 300) were investigated to determine optimal scan parameters of SG-LGE technique based on image quality score and contrast-to-noise ratio (CNR). Self-gated late gadolinium enhancement allowed successful scan in 10 (100%) rats. However, only 4 (40%) rats were successfully scanned with the ECG-RESP-gating method. TAs with SG-LGE varied depending on NR used (TA: 41, 82, 154, and 307 seconds, corresponding to NR of 40, 80, 150, and 300, respectively). For the ECG-RESP-gating method, the average TA was 220 seconds. For SG-LGE images, CNR (42.5 ± 5.5, 43.5 ± 7.5, 54 ± 9, 59.5 ± 8.5, 56 ± 13, 54 ± 8, and 41 ± 9) and image quality score (1.85 ± 0.75, 2.20 ± 0.83, 2.85 ± 0.37, 3.85 ± 0.52, 2.8 ± 0.51, 2.45 ± 0.76, and 1.95 ± 0.60) were achieved with different FAs (10°, 15°, 20°, 25°, 30°, 35°, and 40°, respectively). Optimal FAs of 20°-30° and NR of 80 were recommended. Self-gated technique can improve image quality of LGE without irregular ECG or respiration gating. Therefore, SG-LGE can be used an alternative method of ECG-RESP-gating.

  9. Optimizing Controlling-Value-Based Power Gating with Gate Count and Switching Activity

    NASA Astrophysics Data System (ADS)

    Chen, Lei; Kimura, Shinji

    In this paper, a new heuristic algorithm is proposed to optimize the power domain clustering in controlling-value-based (CV-based) power gating technology. In this algorithm, both the switching activity of sleep signals (p) and the overall numbers of sleep gates (gate count, N) are considered, and the sum of the product of p and N is optimized. The algorithm effectively exerts the total power reduction obtained from the CV-based power gating. Even when the maximum depth is kept to be the same, the proposed algorithm can still achieve power reduction approximately 10% more than that of the prior algorithms. Furthermore, detailed comparison between the proposed heuristic algorithm and other possible heuristic algorithms are also presented. HSPICE simulation results show that over 26% of total power reduction can be obtained by using the new heuristic algorithm. In addition, the effect of dynamic power reduction through the CV-based power gating method and the delay overhead caused by the switching of sleep transistors are also shown in this paper.

  10. Quantum computing gates via optimal control

    NASA Astrophysics Data System (ADS)

    Atia, Yosi; Elias, Yuval; Mor, Tal; Weinstein, Yossi

    2014-10-01

    We demonstrate the use of optimal control to design two entropy-manipulating quantum gates which are more complex than the corresponding, commonly used, gates, such as CNOT and Toffoli (CCNOT): A two-qubit gate called polarization exchange (PE) and a three-qubit gate called polarization compression (COMP) were designed using GRAPE, an optimal control algorithm. Both gates were designed for a three-spin system. Our design provided efficient and robust nuclear magnetic resonance (NMR) radio frequency (RF) pulses for 13C2-trichloroethylene (TCE), our chosen three-spin system. We then experimentally applied these two quantum gates onto TCE at the NMR lab. Such design of these gates and others could be relevant for near-future applications of quantum computing devices.

  11. Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment

    PubMed Central

    2017-01-01

    The first demonstration of an n-type water-gated organic field-effect transistor (WGOFET) is here reported, along with simple water-gated complementary integrated circuits, in the form of inverting logic gates. For the n-type WGOFET active layer, high-electron-affinity organic semiconductors, including naphthalene diimide co-polymers and a soluble fullerene derivative, have been compared, with the latter enabling a high electric double layer capacitance in the range of 1 μF cm–2 in full accumulation and a mobility–capacitance product of 7 × 10–3 μF/V s. Short-term stability measurements indicate promising cycling robustness, despite operating the device in an environment typically considered harsh, especially for electron-transporting organic molecules. This work paves the way toward advanced circuitry design for signal conditioning and actuation in an aqueous environment and opens new perspectives in the implementation of active bio-organic interfaces for biosensing and neuromodulation. PMID:28180187

  12. Fabrication of quantum dots in undoped Si/Si 0.8Ge 0.2 heterostructures using a single metal-gate layer

    DOE PAGES

    Lu, T. M.; Gamble, J. K.; Muller, R. P.; ...

    2016-08-01

    Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si 0.8Ge 0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratiomore » used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. Furthermore, the device uses only a single metal-gate layer, greatly simplifying device design and fabrication.« less

  13. Signatures of Mechanosensitive Gating.

    PubMed

    Morris, Richard G

    2017-01-10

    The question of how mechanically gated membrane channels open and close is notoriously difficult to address, especially if the protein structure is not available. This perspective highlights the relevance of micropipette-aspirated single-particle tracking-used to obtain a channel's diffusion coefficient, D, as a function of applied membrane tension, σ-as an indirect assay for determining functional behavior in mechanosensitive channels. While ensuring that the protein remains integral to the membrane, such methods can be used to identify not only the gating mechanism of a protein, but also associated physical moduli, such as torsional and dilational rigidity, which correspond to the protein's effective shape change. As an example, three distinct D-versus-σ "signatures" are calculated, corresponding to gating by dilation, gating by tilt, and gating by a combination of both dilation and tilt. Both advantages and disadvantages of the approach are discussed. Copyright © 2017 Biophysical Society. Published by Elsevier Inc. All rights reserved.

  14. Gate-controlled conductance switching in DNA

    PubMed Central

    Xiang, Limin; Palma, Julio L.; Li, Yueqi; Mujica, Vladimiro; Ratner, Mark A.; Tao, Nongjian

    2017-01-01

    Extensive evidence has shown that long-range charge transport can occur along double helical DNA, but active control (switching) of single-DNA conductance with an external field has not yet been demonstrated. Here we demonstrate conductance switching in DNA by replacing a DNA base with a redox group. By applying an electrochemical (EC) gate voltage to the molecule, we switch the redox group between the oxidized and reduced states, leading to reversible switching of the DNA conductance between two discrete levels. We further show that monitoring the individual conductance switching allows the study of redox reaction kinetics and thermodynamics at single molecular level using DNA as a probe. Our theoretical calculations suggest that the switch is due to the change in the energy level alignment of the redox states relative to the Fermi level of the electrodes. PMID:28218275

  15. Reverse micelle synthesis of nanoscale metal containing catalysts

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Darab, J.G.; Fulton, J.L.; Linehan, J.C.

    1993-03-01

    The need for morphological control during the synthesis of catalyst precursor powders is generally accepted to be important. In the liquefaction of coal, for example, iron-bearing catalyst precursor particles containing individual crystallites with diameters in the 1-100 nanometer range are believed to achieve good dispersion through out the coal-solvent slurry during liquefaction 2 runs and to undergo chemical transformations to catalytically active iron sulfide phases. The production of the nanoscale powders described here employs the confining spherical microdomains comprising the aqueous phase of a modified reverse micelle (MRM) microemulsion system as nanoscale reaction vessels in which polymerization, electrochemical reduction andmore » precipitation of solvated salts can occur. The goal is to take advantage of the confining nature of micelles to kinetically hinder transformation processes which readily occur in bulk aqueous solution in order to control the morphology and phase of the resulting powder. We have prepared a variety of metal, alloy, and metal- and mixed metal-oxide nanoscale powders from appropriate MRM systems. Examples of nanoscale powders produced include Co, Mo-Co, Ni{sub 3}Fe, Ni, and various oxides and oxyhydroxides of iron. Here, we discuss the preparation and characterization of nickel metal (with a nickel oxide surface layer) and iron oxyhydroxide MRM nanoscale powders. We have used extended x-ray absorption fine structure (EXAFS) spectroscopy to study the chemical polymerization process in situ, x-ray diffraction (XRD), scanning and transmission electron microcroscopies (SEM and TEM), elemental analysis and structural modelling to characterize the nanoscale powders produced. The catalytic activity of these powders is currently being studied.« less

  16. Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

    NASA Astrophysics Data System (ADS)

    Cho, Seungho; Yun, Chao; Tappertzhofen, Stefan; Kursumovic, Ahmed; Lee, Shinbuhm; Lu, Ping; Jia, Quanxi; Fan, Meng; Jian, Jie; Wang, Haiyan; Hofmann, Stephan; MacManus-Driscoll, Judith L.

    2016-08-01

    Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO2 and SrTiO3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (~1012 inch-2). We systematically show that these devices allow precise engineering of the resistance states, thus enabling large on-off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.

  17. 49 CFR 234.223 - Gate arm.

    Code of Federal Regulations, 2013 CFR

    2013-10-01

    ... 49 Transportation 4 2013-10-01 2013-10-01 false Gate arm. 234.223 Section 234.223 Transportation... SYSTEMS Maintenance, Inspection, and Testing Maintenance Standards § 234.223 Gate arm. Each gate arm, when... maintained in a condition sufficient to be clearly viewed by approaching highway users. Each gate arm shall...

  18. 49 CFR 234.223 - Gate arm.

    Code of Federal Regulations, 2012 CFR

    2012-10-01

    ... 49 Transportation 4 2012-10-01 2012-10-01 false Gate arm. 234.223 Section 234.223 Transportation... SYSTEMS Maintenance, Inspection, and Testing Maintenance Standards § 234.223 Gate arm. Each gate arm, when... maintained in a condition sufficient to be clearly viewed by approaching highway users. Each gate arm shall...

  19. 49 CFR 234.223 - Gate arm.

    Code of Federal Regulations, 2014 CFR

    2014-10-01

    ... 49 Transportation 4 2014-10-01 2014-10-01 false Gate arm. 234.223 Section 234.223 Transportation... SYSTEMS Maintenance, Inspection, and Testing Maintenance Standards § 234.223 Gate arm. Each gate arm, when... maintained in a condition sufficient to be clearly viewed by approaching highway users. Each gate arm shall...

  20. PREFACE: Superconductivity in ultrathin films and nanoscale systems Superconductivity in ultrathin films and nanoscale systems

    NASA Astrophysics Data System (ADS)

    Bianconi, Antonio; Bose, Sangita; Garcia-Garcia, Antonio Miguel

    2012-12-01

    The recent technological developments in the synthesis and characterization of high-quality nanostructures and developments in the theoretical techniques needed to model these materials, have motivated this focus section of Superconductor Science and Technology. Another motivation is the compelling evidence that all new superconducting materials, such as iron pnictides and chalcogenides, diborides (doped MgB2) and fullerides (alkali-doped C60 compounds), are heterostrucures at the atomic limit, such as the cuprates made of stacks of nanoscale superconducting layers intercalated by different atomic layers with nanoscale periodicity. Recently a great amount of interest has been shown in the role of lattice nano-architecture in controlling the fine details of Fermi surface topology. The experimental and theoretical study of superconductivity in the nanoscale started in the early 1960s, shortly after the discovery of the BCS theory. Thereafter there has been rapid progress both in experiments and the theoretical understanding of nanoscale superconductors. Experimentally, thin films, granular films, nanowires, nanotubes and single nanoparticles have all been explored. New quantum effects appear in the nanoscale related to multi-component condensates. Advances in the understanding of shape resonances or Fano resonances close to 2.5 Lifshitz transitions near a band edge in nanowires, 2D films and superlattices [1, 2] of these nanosized modules, provide the possibility of manipulating new quantum electronic states. Parity effects and shell effects in single, isolated nanoparticles have been reported by several groups. Theoretically, newer techniques based on solving Richardson's equation (an exact theory incorporating finite size effects to the BCS theory) numerically by path integral methods or solving the entire Bogoliubov-de Gennes equation in these limits have been attempted, which has improved our understanding of the mechanism of superconductivity in these confined

  1. Effects of structural modification on reliability of nanoscale nitride HEMTs

    NASA Astrophysics Data System (ADS)

    Gaddipati, Vamsi Mohan

    AlGaN based nanoscale high-electron-mobility transistors (HEMTs) are the next generation of transistor technology that features the unique combination of higher power, wider bandwidth, low noise, higher efficiency, and temperature/radiation hardness than conventional AlGaAs and Si based technologies. However, as evidenced by recent stress tests, reliability of these devices (characterized by a gradual decrease in the output current/power leading to failure of the device in just tens of hours of operation) remains a major concern. Although, in these tests, physical damages were clearly visible in the device, the root cause and nature of these damages have not yet been fully assessed experimentally. Therefore, a comprehensive theoretical study of the physical mechanisms responsible for degradation of AlGaN HEMTs is essential before these devices are deployed in targeted applications. The main objective of the proposed research is to computationally investigate how degradation of state-of-the-art nanoscale AlGaN HEMTs is governed by an intricate and dynamical coupling of thermo-electromechanical processes at different length (atoms-to-transistor) and time (femtosecondto- hours) scales while operating in high voltage, large mechanical, and high temperature/radiation stresses. This work centers around a novel hypotheses as follows: High voltage applied to AlGaN HEMT causes excessive internal heat dissipation, which triggers gate metal diffusion into the semiconducting barrier layer and structural modifications (defect ii formation) leading to diminished polarization induced charge density and output current. Since the dynamical system to be studied is complex, chaotic (where the evolution rule is guided by atomicity of the underlying material), and involve coupled physical processes, an in-house multiscale simulator (QuADS 3-D) has been employed and augmented, where material parameters are obtained atomistically using firstprinciples, structural relaxation and defect

  2. Reverse micelle synthesis of nanoscale metal containing catalysts. [Nickel metal (with a nickel oxide surface layer) and iron oxyhydroxide nanoscale powders

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Darab, J.G.; Fulton, J.L.; Linehan, J.C.

    1993-03-01

    The need for morphological control during the synthesis of catalyst precursor powders is generally accepted to be important. In the liquefaction of coal, for example, iron-bearing catalyst precursor particles containing individual crystallites with diameters in the 1-100 nanometer range are believed to achieve good dispersion through out the coal-solvent slurry during liquefaction 2 runs and to undergo chemical transformations to catalytically active iron sulfide phases. The production of the nanoscale powders described here employs the confining spherical microdomains comprising the aqueous phase of a modified reverse micelle (MRM) microemulsion system as nanoscale reaction vessels in which polymerization, electrochemical reduction andmore » precipitation of solvated salts can occur. The goal is to take advantage of the confining nature of micelles to kinetically hinder transformation processes which readily occur in bulk aqueous solution in order to control the morphology and phase of the resulting powder. We have prepared a variety of metal, alloy, and metal- and mixed metal-oxide nanoscale powders from appropriate MRM systems. Examples of nanoscale powders produced include Co, Mo-Co, Ni[sub 3]Fe, Ni, and various oxides and oxyhydroxides of iron. Here, we discuss the preparation and characterization of nickel metal (with a nickel oxide surface layer) and iron oxyhydroxide MRM nanoscale powders. We have used extended x-ray absorption fine structure (EXAFS) spectroscopy to study the chemical polymerization process in situ, x-ray diffraction (XRD), scanning and transmission electron microcroscopies (SEM and TEM), elemental analysis and structural modelling to characterize the nanoscale powders produced. The catalytic activity of these powders is currently being studied.« less

  3. Design of Surface Modifications for Nanoscale Sensor Applications

    PubMed Central

    Reimhult, Erik; Höök, Fredrik

    2015-01-01

    Nanoscale biosensors provide the possibility to miniaturize optic, acoustic and electric sensors to the dimensions of biomolecules. This enables approaching single-molecule detection and new sensing modalities that probe molecular conformation. Nanoscale sensors are predominantly surface-based and label-free to exploit inherent advantages of physical phenomena allowing high sensitivity without distortive labeling. There are three main criteria to be optimized in the design of surface-based and label-free biosensors: (i) the biomolecules of interest must bind with high affinity and selectively to the sensitive area; (ii) the biomolecules must be efficiently transported from the bulk solution to the sensor; and (iii) the transducer concept must be sufficiently sensitive to detect low coverage of captured biomolecules within reasonable time scales. The majority of literature on nanoscale biosensors deals with the third criterion while implicitly assuming that solutions developed for macroscale biosensors to the first two, equally important, criteria are applicable also to nanoscale sensors. We focus on providing an introduction to and perspectives on the advanced concepts for surface functionalization of biosensors with nanosized sensor elements that have been developed over the past decades (criterion (iii)). We review in detail how patterning of molecular films designed to control interactions of biomolecules with nanoscale biosensor surfaces creates new possibilities as well as new challenges. PMID:25594599

  4. Electron transporting water-gated thin film transistors

    NASA Astrophysics Data System (ADS)

    Al Naim, Abdullah; Grell, Martin

    2012-10-01

    We demonstrate an electron-transporting water-gated thin film transistor, using thermally converted precursor-route zinc-oxide (ZnO) intrinsic semiconductors with hexamethyldisilazene (HMDS) hydrophobic surface modification. Water gated HMDS-ZnO thin film transistors (TFT) display low threshold and high electron mobility. ZnO films constitute an attractive alternative to organic semiconductors for TFT transducers in sensor applications for waterborne analytes. Despite the use of an electrolyte as gate medium, the gate geometry (shape of gate electrode and distance between gate electrode and TFT channel) is relevant for optimum performance of water-gated TFTs.

  5. 49 CFR 234.223 - Gate arm.

    Code of Federal Regulations, 2011 CFR

    2011-10-01

    ... 49 Transportation 4 2011-10-01 2011-10-01 false Gate arm. 234.223 Section 234.223 Transportation... Maintenance Standards § 234.223 Gate arm. Each gate arm, when in the downward position, shall extend across... clearly viewed by approaching highway users. Each gate arm shall start its downward motion not less than...

  6. 49 CFR 234.223 - Gate arm.

    Code of Federal Regulations, 2010 CFR

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Gate arm. 234.223 Section 234.223 Transportation... Maintenance Standards § 234.223 Gate arm. Each gate arm, when in the downward position, shall extend across... clearly viewed by approaching highway users. Each gate arm shall start its downward motion not less than...

  7. Multi-bit dark state memory: Double quantum dot as an electronic quantum memory

    NASA Astrophysics Data System (ADS)

    Aharon, Eran; Pozner, Roni; Lifshitz, Efrat; Peskin, Uri

    2016-12-01

    Quantum dot clusters enable the creation of dark states which preserve electrons or holes in a coherent superposition of dot states for a long time. Various quantum logic devices can be envisioned to arise from the possibility of storing such trapped particles for future release on demand. In this work, we consider a double quantum dot memory device, which enables the preservation of a coherent state to be released as multiple classical bits. Our unique device architecture uses an external gating for storing (writing) the coherent state and for retrieving (reading) the classical bits, in addition to exploiting an internal gating effect for the preservation of the coherent state.

  8. Dynamic structural disorder in supported nanoscale catalysts

    NASA Astrophysics Data System (ADS)

    Rehr, J. J.; Vila, F. D.

    2014-04-01

    We investigate the origin and physical effects of "dynamic structural disorder" (DSD) in supported nano-scale catalysts. DSD refers to the intrinsic fluctuating, inhomogeneous structure of such nano-scale systems. In contrast to bulk materials, nano-scale systems exhibit substantial fluctuations in structure, charge, temperature, and other quantities, as well as large surface effects. The DSD is driven largely by the stochastic librational motion of the center of mass and fluxional bonding at the nanoparticle surface due to thermal coupling with the substrate. Our approach for calculating and understanding DSD is based on a combination of real-time density functional theory/molecular dynamics simulations, transient coupled-oscillator models, and statistical mechanics. This approach treats thermal and dynamic effects over multiple time-scales, and includes bond-stretching and -bending vibrations, and transient tethering to the substrate at longer ps time-scales. Potential effects on the catalytic properties of these clusters are briefly explored. Model calculations of molecule-cluster interactions and molecular dissociation reaction paths are presented in which the reactant molecules are adsorbed on the surface of dynamically sampled clusters. This model suggests that DSD can affect both the prefactors and distribution of energy barriers in reaction rates, and thus can significantly affect catalytic activity at the nano-scale.

  9. Probing and manipulating magnetization at the nanoscale

    NASA Astrophysics Data System (ADS)

    Samarth, Nitin

    2012-02-01

    Combining semiconductors with magnetism in hetero- and nano-structured geometries provides a powerful means of exploring the interplay between spin-dependent transport and nanoscale magnetism. We describe two recent studies in this context. First, we use spin-dependent transport in ferromagnetic semiconductor thin films to provide a new window into nanoscale magnetism [1]: here, we exploit the large anomalous Hall effect in a ferromagnetic semiconductor as a nanoscale probe of the reversible elastic behavior of magnetic domain walls and gain insight into regimes of domain wall behavior inaccessible to more conventional optical techniques. Next, we describe novel ways to create self-assembled hybrid semiconductor/ferromagnet core-shell nanowires [2] and show how magnetoresistance measurements in single nanowires, coupled with micromagnetic simulations, can provide detailed insights into the magnetization reversal process in nanoscale ferromagnets [3]. The work described here was carried out in collaboration with Andrew Balk, Jing Liang, Nicholas Dellas, Mark Nowakowski, David Rench, Mark Wilson, Roman Engel-Herbert, Suzanne Mohney, Peter Schiffer and David Awschalom. This work is supported by ONR, NSF and the NSF-MRSEC program.[4pt] [1] A. L. Balk et al., Phys. Rev.Lett. 107, 077205 (2011).[0pt] [2] N. J. Dellas et al., Appl. Phys. Lett. 97, 072505 (2010).[0pt] [3] J. Liang et al., in preparation.

  10. Sliding-gate valve for use with abrasive materials

    DOEpatents

    Ayers, Jr., William J.; Carter, Charles R.; Griffith, Richard A.; Loomis, Richard B.; Notestein, John E.

    1985-01-01

    The invention is a flow and pressure-sealing valve for use with abrasive solids. The valve embodies special features which provide for long, reliable operating lifetimes in solids-handling service. The valve includes upper and lower transversely slidable gates, contained in separate chambers. The upper gate provides a solids-flow control function, whereas the lower gate provides a pressure-sealing function. The lower gate is supported by means for (a) lifting that gate into sealing engagement with its seat when the gate is in its open and closed positions and (b) lowering the gate out of contact with its seat to permit abrasion-free transit of the gate between its open and closed positions. When closed, the upper gate isolates the lower gate from the solids. Because of this shielding action, the sealing surface of the lower gate is not exposed to solids during transit or when it is being lifted or lowered. The chamber containing the lower gate normally is pressurized slightly, and a sweep gas is directed inwardly across the lower-gate sealing surface during the vertical translation of the gate.

  11. Method to determine thermal profiles of nanoscale circuitry

    DOEpatents

    Zettl, Alexander K; Begtrup, Gavi E

    2013-04-30

    A platform that can measure the thermal profiles of devices with nanoscale resolution has been developed. The system measures the local temperature by using an array of nanoscale thermometers. This process can be observed in real time using a high resolution imagining technique such as electron microscopy. The platform can operate at extremely high temperatures.

  12. Nanoscale Membrane Curvature detected by Polarized Localization Microscopy

    NASA Astrophysics Data System (ADS)

    Kelly, Christopher; Maarouf, Abir; Woodward, Xinxin

    Nanoscale membrane curvature is a necessary component of countless cellular processes. Here we present Polarized Localization Microscopy (PLM), a super-resolution optical imaging technique that enables the detection of nanoscale membrane curvature with order-of-magnitude improvements over comparable optical techniques. PLM combines the advantages of polarized total internal reflection fluorescence microscopy and fluorescence localization microscopy to reveal single-fluorophore locations and orientations without reducing localization precision by point spread function manipulation. PLM resolved nanoscale membrane curvature of a supported lipid bilayer draped over polystyrene nanoparticles on a glass coverslip, thus creating a model membrane with coexisting flat and curved regions and membrane radii of curvature as small as 20 nm. Further, PLM provides single-molecule trajectories and the aggregation of curvature-inducing proteins with super-resolution to reveal the correlated effects of membrane curvature, dynamics, and molecular sorting. For example, cholera toxin subunit B has been observed to induce nanoscale membrane budding and concentrate at the bud neck. PLM reveals a previously hidden and critical information of membrane topology.

  13. Sandwich-like graphene/polypyrrole/layered double hydroxide nanowires for high-performance supercapacitors

    NASA Astrophysics Data System (ADS)

    Li, Xuejin; Zhang, Yu; Xing, Wei; Li, Li; Xue, Qingzhong; Yan, Zifeng

    2016-11-01

    Electrode design in nanoscale is considered to be ultra-important to construct a superb capacitor. Herein, a sandwich-like composite was made by combining graphene/polypyrrole (GPPY) with nickel-aluminum layered double hydroxide nanowires (NiAl-NWs) via a facile hydrothermal method. This sandwich-like architecture is promising in energy storage applications due to three unique features: (1) the conductive GPPY substrate not only effectively prevents the layered double hydroxides species from aggregating, but also considerably facilitates the electron transmission; (2) the ultrathin NiAl-NWs ensure a maximum exposure of active Ni2+, which can improve the efficiency of rapid redox reactions even at high current densities; (3) the sufficient space between anisotropic NiAl-NWs can accommodate a large volume change of the nanowires to avoid their collapse or distortion during the reduplicative redox reactions. Keeping all these unique features in mind, when the as-prepared composite was applied to supercapacitors, it presented an enhanced capacitive performance in terms of high specific capacitance (845 F g-1), excellent rate performance (67% retained at 30 A g-1), remarkable cyclic stability (92% maintained after 5000 cycles) and large energy density (40.1 Wh·Kg-1). This accomplishment in the present work inspires an innovative strategy of nanoscale electrode design for high-rate performance supercapacitor electrodes containing pseuducapacitive metal oxide.

  14. Reversible logic gates on Physarum Polycephalum

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Schumann, Andrew

    2015-03-10

    In this paper, we consider possibilities how to implement asynchronous sequential logic gates and quantum-style reversible logic gates on Physarum polycephalum motions. We show that in asynchronous sequential logic gates we can erase information because of uncertainty in the direction of plasmodium propagation. Therefore quantum-style reversible logic gates are more preferable for designing logic circuits on Physarum polycephalum.

  15. Travels with Gates - August 2010

    Science.gov Websites

    combat floods that are affecting 14 million people. Story Biography Speeches Travels Photo Essays Gates Visits Navy Special Warefare Training More Photo Essays Gates Attends Graduation in San Diego Gates Photo Essays News Photos Week In Photos Videos DIMOC DOD/Military Seals DoD Flickr Secretary of Defense

  16. Scalable quantum computing based on stationary spin qubits in coupled quantum dots inside double-sided optical microcavities

    NASA Astrophysics Data System (ADS)

    Wei, Hai-Rui; Deng, Fu-Guo

    2014-12-01

    Quantum logic gates are the key elements in quantum computing. Here we investigate the possibility of achieving a scalable and compact quantum computing based on stationary electron-spin qubits, by using the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics. We design the compact quantum circuits for implementing universal and deterministic quantum gates for electron-spin systems, including the two-qubit CNOT gate and the three-qubit Toffoli gate. They are compact and economic, and they do not require additional electron-spin qubits. Moreover, our devices have good scalability and are attractive as they both are based on solid-state quantum systems and the qubits are stationary. They are feasible with the current experimental technology, and both high fidelity and high efficiency can be achieved when the ratio of the side leakage to the cavity decay is low.

  17. Scalable quantum computing based on stationary spin qubits in coupled quantum dots inside double-sided optical microcavities.

    PubMed

    Wei, Hai-Rui; Deng, Fu-Guo

    2014-12-18

    Quantum logic gates are the key elements in quantum computing. Here we investigate the possibility of achieving a scalable and compact quantum computing based on stationary electron-spin qubits, by using the giant optical circular birefringence induced by quantum-dot spins in double-sided optical microcavities as a result of cavity quantum electrodynamics. We design the compact quantum circuits for implementing universal and deterministic quantum gates for electron-spin systems, including the two-qubit CNOT gate and the three-qubit Toffoli gate. They are compact and economic, and they do not require additional electron-spin qubits. Moreover, our devices have good scalability and are attractive as they both are based on solid-state quantum systems and the qubits are stationary. They are feasible with the current experimental technology, and both high fidelity and high efficiency can be achieved when the ratio of the side leakage to the cavity decay is low.

  18. Quantum gates with controlled adiabatic evolutions

    NASA Astrophysics Data System (ADS)

    Hen, Itay

    2015-02-01

    We introduce a class of quantum adiabatic evolutions that we claim may be interpreted as the equivalents of the unitary gates of the quantum gate model. We argue that these gates form a universal set and may therefore be used as building blocks in the construction of arbitrary "adiabatic circuits," analogously to the manner in which gates are used in the circuit model. One implication of the above construction is that arbitrary classical boolean circuits as well as gate model circuits may be directly translated to adiabatic algorithms with no additional resources or complexities. We show that while these adiabatic algorithms fail to exhibit certain aspects of the inherent fault tolerance of traditional quantum adiabatic algorithms, they may have certain other experimental advantages acting as quantum gates.

  19. Stanford, Duke, Rice,... and Gates?

    ERIC Educational Resources Information Center

    Carey, Kevin

    2009-01-01

    This article presents an open letter to Bill Gates. In his letter, the author suggests that Bill Gates should build a brand-new university, a great 21st-century institution of higher learning. This university will be unlike anything the world has ever seen. He asks Bill Gates not to stop helping existing colleges create the higher-education system…

  20. Hysteresis in voltage-gated channels.

    PubMed

    Villalba-Galea, Carlos A

    2017-03-04

    Ion channels constitute a superfamily of membrane proteins found in all living creatures. Their activity allows fast translocation of ions across the plasma membrane down the ion's transmembrane electrochemical gradient, resulting in a difference in electrical potential across the plasma membrane, known as the membrane potential. A group within this superfamily, namely voltage-gated channels, displays activity that is sensitive to the membrane potential. The activity of voltage-gated channels is controlled by the membrane potential, while the membrane potential is changed by these channels' activity. This interplay produces variations in the membrane potential that have evolved into electrical signals in many organisms. These signals are essential for numerous biological processes, including neuronal activity, insulin release, muscle contraction, fertilization and many others. In recent years, the activity of the voltage-gated channels has been observed not to follow a simple relationship with the membrane potential. Instead, it has been shown that the activity of voltage-gated channel displays hysteresis. In fact, a growing number of evidence have demonstrated that the voltage dependence of channel activity is dynamically modulated by activity itself. In spite of the great impact that this property can have on electrical signaling, hysteresis in voltage-gated channels is often overlooked. Addressing this issue, this review provides examples of voltage-gated ion channels displaying hysteretic behavior. Further, this review will discuss how Dynamic Voltage Dependence in voltage-gated channels can have a physiological role in electrical signaling. Furthermore, this review will elaborate on the current thoughts on the mechanism underlying hysteresis in voltage-gated channels.

  1. Hysteresis in voltage-gated channels

    PubMed Central

    2017-01-01

    ABSTRACT Ion channels constitute a superfamily of membrane proteins found in all living creatures. Their activity allows fast translocation of ions across the plasma membrane down the ion's transmembrane electrochemical gradient, resulting in a difference in electrical potential across the plasma membrane, known as the membrane potential. A group within this superfamily, namely voltage-gated channels, displays activity that is sensitive to the membrane potential. The activity of voltage-gated channels is controlled by the membrane potential, while the membrane potential is changed by these channels' activity. This interplay produces variations in the membrane potential that have evolved into electrical signals in many organisms. These signals are essential for numerous biological processes, including neuronal activity, insulin release, muscle contraction, fertilization and many others. In recent years, the activity of the voltage-gated channels has been observed not to follow a simple relationship with the membrane potential. Instead, it has been shown that the activity of voltage-gated channel displays hysteresis. In fact, a growing number of evidence have demonstrated that the voltage dependence of channel activity is dynamically modulated by activity itself. In spite of the great impact that this property can have on electrical signaling, hysteresis in voltage-gated channels is often overlooked. Addressing this issue, this review provides examples of voltage-gated ion channels displaying hysteretic behavior. Further, this review will discuss how Dynamic Voltage Dependence in voltage-gated channels can have a physiological role in electrical signaling. Furthermore, this review will elaborate on the current thoughts on the mechanism underlying hysteresis in voltage-gated channels. PMID:27689426

  2. Dopant atoms as quantum components in silicon nanoscale devices

    NASA Astrophysics Data System (ADS)

    Zhao, Xiaosong; Han, Weihua; Wang, Hao; Ma, Liuhong; Li, Xiaoming; Zhang, Wang; Yan, Wei; Yang, Fuhua

    2018-06-01

    Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore's law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics. Project supported by National Key R&D Program of China (No. 2016YFA0200503).

  3. Talin determines the nanoscale architecture of focal adhesions.

    PubMed

    Liu, Jaron; Wang, Yilin; Goh, Wah Ing; Goh, Honzhen; Baird, Michelle A; Ruehland, Svenja; Teo, Shijia; Bate, Neil; Critchley, David R; Davidson, Michael W; Kanchanawong, Pakorn

    2015-09-01

    Insight into how molecular machines perform their biological functions depends on knowledge of the spatial organization of the components, their connectivity, geometry, and organizational hierarchy. However, these parameters are difficult to determine in multicomponent assemblies such as integrin-based focal adhesions (FAs). We have previously applied 3D superresolution fluorescence microscopy to probe the spatial organization of major FA components, observing a nanoscale stratification of proteins between integrins and the actin cytoskeleton. Here we combine superresolution imaging techniques with a protein engineering approach to investigate how such nanoscale architecture arises. We demonstrate that talin plays a key structural role in regulating the nanoscale architecture of FAs, akin to a molecular ruler. Talin diagonally spans the FA core, with its N terminus at the membrane and C terminus demarcating the FA/stress fiber interface. In contrast, vinculin is found to be dispensable for specification of FA nanoscale architecture. Recombinant analogs of talin with modified lengths recapitulated its polarized orientation but altered the FA/stress fiber interface in a linear manner, consistent with its modular structure, and implicating the integrin-talin-actin complex as the primary mechanical linkage in FAs. Talin was found to be ∼97 nm in length and oriented at ∼15° relative to the plasma membrane. Our results identify talin as the primary determinant of FA nanoscale organization and suggest how multiple cellular forces may be integrated at adhesion sites.

  4. Benchmarking gate-based quantum computers

    NASA Astrophysics Data System (ADS)

    Michielsen, Kristel; Nocon, Madita; Willsch, Dennis; Jin, Fengping; Lippert, Thomas; De Raedt, Hans

    2017-11-01

    With the advent of public access to small gate-based quantum processors, it becomes necessary to develop a benchmarking methodology such that independent researchers can validate the operation of these processors. We explore the usefulness of a number of simple quantum circuits as benchmarks for gate-based quantum computing devices and show that circuits performing identity operations are very simple, scalable and sensitive to gate errors and are therefore very well suited for this task. We illustrate the procedure by presenting benchmark results for the IBM Quantum Experience, a cloud-based platform for gate-based quantum computing.

  5. The human respiratory gate

    NASA Technical Reports Server (NTRS)

    Eckberg, Dwain L.

    2003-01-01

    Respiratory activity phasically alters membrane potentials of preganglionic vagal and sympathetic motoneurones and continuously modulates their responsiveness to stimulatory inputs. The most obvious manifestation of this 'respiratory gating' is respiratory sinus arrhythmia, the rhythmic fluctuations of electrocardiographic R-R intervals observed in healthy resting humans. Phasic autonomic motoneurone firing, reflecting the throughput of the system, depends importantly on the intensity of stimulatory inputs, such that when levels of stimulation are low (as with high arterial pressure and sympathetic activity, or low arterial pressure and vagal activity), respiratory fluctuations of sympathetic or vagal firing are also low. The respiratory gate has a finite capacity, and high levels of stimulation override the ability of respiration to gate autonomic responsiveness. Autonomic throughput also depends importantly on other factors, including especially, the frequency of breathing, the rate at which the gate opens and closes. Respiratory sinus arrhythmia is small at rapid, and large at slow breathing rates. The strong correlation between systolic pressure and R-R intervals at respiratory frequencies reflects the influence of respiration on these two measures, rather than arterial baroreflex physiology. A wide range of evidence suggests that respiratory activity gates the timing of autonomic motoneurone firing, but does not influence its tonic level. I propose that the most enduring significance of respiratory gating is its use as a precisely controlled experimental tool to tease out and better understand otherwise inaccessible human autonomic neurophysiological mechanisms.

  6. A Pearson Effective Potential for Monte Carlo Simulation of Quantum Confinement Effects in nMOSFETs

    NASA Astrophysics Data System (ADS)

    Jaud, Marie-Anne; Barraud, Sylvain; Saint-Martin, Jérôme; Bournel, Arnaud; Dollfus, Philippe; Jaouen, Hervé

    2008-12-01

    A Pearson Effective Potential model for including quantization effects in the simulation of nanoscale nMOSFETs has been developed. This model, based on a realistic description of the function representing the non zero-size of the electron wave packet, has been used in a Monte-Carlo simulator for bulk, single gate SOI and double-gate SOI devices. In the case of SOI capacitors, the electron density has been computed for a large range of effective field (between 0.1 MV/cm and 1 MV/cm) and for various silicon film thicknesses (between 5 nm and 20 nm). A good agreement with the Schroedinger-Poisson results is obtained both on the total inversion charge and on the electron density profiles. The ability of an Effective Potential approach to accurately reproduce electrostatic quantum confinement effects is clearly demonstrated.

  7. pH controlled gating of toxic protein pores by dendrimers

    NASA Astrophysics Data System (ADS)

    Mandal, Taraknath; Kanchi, Subbarao; Ayappa, K. G.; Maiti, Prabal K.

    2016-06-01

    Designing effective nanoscale blockers for membrane inserted pores formed by pore forming toxins, which are expressed by several virulent bacterial strains, on a target cell membrane is a challenging and active area of research. Here we demonstrate that PAMAM dendrimers can act as effective pH controlled gating devices once the pore has been formed. We have used fully atomistic molecular dynamics (MD) simulations to characterize the cytolysin A (ClyA) protein pores modified with fifth generation (G5) PAMAM dendrimers. Our results show that the PAMAM dendrimer, in either its protonated (P) or non-protonated (NP) states can spontaneously enter the protein lumen. Protonated dendrimers interact strongly with the negatively charged protein pore lumen. As a consequence, P dendrimers assume a more expanded configuration efficiently blocking the pore when compared with the more compact configuration adopted by the neutral NP dendrimers creating a greater void space for the passage of water and ions. To quantify the effective blockage of the protein pore, we have calculated the pore conductance as well as the residence times by applying a weak force on the ions/water. Ionic currents are reduced by 91% for the P dendrimers and 31% for the NP dendrimers. The preferential binding of Cl- counter ions to the P dendrimer creates a zone of high Cl- concentration in the vicinity of the internalized dendrimer and a high concentration of K+ ions in the transmembrane region of the pore lumen. In addition to steric effects, this induced charge segregation for the P dendrimer effectively blocks ionic transport through the pore. Our investigation shows that the bio-compatible PAMAM dendrimers can potentially be used to develop therapeutic protocols based on the pH sensitive gating of pores formed by pore forming toxins to mitigate bacterial infections.Designing effective nanoscale blockers for membrane inserted pores formed by pore forming toxins, which are expressed by several virulent

  8. Unifying Gate Synthesis and Magic State Distillation.

    PubMed

    Campbell, Earl T; Howard, Mark

    2017-02-10

    The leading paradigm for performing a computation on quantum memories can be encapsulated as distill-then-synthesize. Initially, one performs several rounds of distillation to create high-fidelity magic states that provide one good T gate, an essential quantum logic gate. Subsequently, gate synthesis intersperses many T gates with Clifford gates to realize a desired circuit. We introduce a unified framework that implements one round of distillation and multiquibit gate synthesis in a single step. Typically, our method uses the same number of T gates as conventional synthesis but with the added benefit of quadratic error suppression. Because of this, one less round of magic state distillation needs to be performed, leading to significant resource savings.

  9. Mixed electrochemical–ferroelectric states in nanoscale ferroelectrics

    DOE PAGES

    Yang, Sang Mo; Morozovska, Anna N.; Kumar, Rajeev; ...

    2017-05-01

    Ferroelectricity on the nanoscale has been the subject of much fascination in condensed-matter physics for over half a century. In recent years, multiple reports claiming ferroelectricity in ultrathin ferroelectric films based on the formation of remnant polarization states, local electromechanical hysteresis loops, and pressure-induced switching were made. But, similar phenomena were reported for traditionally non-ferroelectric materials, creating a significant level of uncertainty in the field. We show that in nanoscale systems the ferroelectric state is fundamentally inseparable from the electrochemical state of the surface, leading to the emergence of a mixed electrochemical–ferroelectric state. We explore the nature, thermodynamics, and thicknessmore » evolution of such states, and demonstrate the experimental pathway to establish its presence. Our analysis reconciles multiple prior studies, provides guidelines for studies of ferroelectric materials on the nanoscale, and establishes the design paradigm for new generations of ferroelectric-based devices.« less

  10. Understanding Cooperative Chirality at the Nanoscale

    NASA Astrophysics Data System (ADS)

    Yu, Shangjie; Wang, Pengpeng; Govorov, Alexander; Ouyang, Min

    Controlling chirality of organic and inorganic structures plays a key role in many physical, chemical and biochemical processes, and may offer new opportunity to create technology applications based on chiroptical effect. In this talk, we will present a theoretical model and simulation to demonstrate how to engineer nanoscale chirality in inorganic nanostructures via synergistic control of electromagnetic response of both lattice and geometry, leading to rich tunability of chirality at the nanoscale. Our model has also been applied to understand recent materials advancement of related control with excellent agreement, and can elucidate physical origins of circular dichroism features in the experiment.

  11. Automated Road Closure Gate

    DOT National Transportation Integrated Search

    2000-05-01

    This report presents the procedures involved in the research, design, construction, and testing of an Automated Road Closure Gate. The current road closure gates used in South Dakota are often unsafe and difficult to operate. This report will assist ...

  12. Site-Directed Spin Labeling Reveals Pentameric Ligand-Gated Ion Channel Gating Motions

    PubMed Central

    Dellisanti, Cosma D.; Ghosh, Borna; Hanson, Susan M.; Raspanti, James M.; Grant, Valerie A.; Diarra, Gaoussou M.; Schuh, Abby M.; Satyshur, Kenneth; Klug, Candice S.; Czajkowski, Cynthia

    2013-01-01

    Pentameric ligand-gated ion channels (pLGICs) are neurotransmitter-activated receptors that mediate fast synaptic transmission. In pLGICs, binding of agonist to the extracellular domain triggers a structural rearrangement that leads to the opening of an ion-conducting pore in the transmembrane domain and, in the continued presence of neurotransmitter, the channels desensitize (close). The flexible loops in each subunit that connect the extracellular binding domain (loops 2, 7, and 9) to the transmembrane channel domain (M2–M3 loop) are essential for coupling ligand binding to channel gating. Comparing the crystal structures of two bacterial pLGIC homologues, ELIC and the proton-activated GLIC, suggests channel gating is associated with rearrangements in these loops, but whether these motions accurately predict the motions in functional lipid-embedded pLGICs is unknown. Here, using site-directed spin labeling (SDSL) electron paramagnetic resonance (EPR) spectroscopy and functional GLIC channels reconstituted into liposomes, we examined if, and how far, the loops at the ECD/TMD gating interface move during proton-dependent gating transitions from the resting to desensitized state. Loop 9 moves ∼9 Å inward toward the channel lumen in response to proton-induced desensitization. Loop 9 motions were not observed when GLIC was in detergent micelles, suggesting detergent solubilization traps the protein in a nonactivatable state and lipids are required for functional gating transitions. Proton-induced desensitization immobilizes loop 2 with little change in position. Proton-induced motion of the M2–M3 loop was not observed, suggesting its conformation is nearly identical in closed and desensitized states. Our experimentally derived distance measurements of spin-labeled GLIC suggest ELIC is not a good model for the functional resting state of GLIC, and that the crystal structure of GLIC does not correspond to a desensitized state. These findings advance our

  13. Democratization of Nanoscale Imaging and Sensing Tools Using Photonics

    PubMed Central

    2015-01-01

    Providing means for researchers and citizen scientists in the developing world to perform advanced measurements with nanoscale precision can help to accelerate the rate of discovery and invention as well as improve higher education and the training of the next generation of scientists and engineers worldwide. Here, we review some of the recent progress toward making optical nanoscale measurement tools more cost-effective, field-portable, and accessible to a significantly larger group of researchers and educators. We divide our review into two main sections: label-based nanoscale imaging and sensing tools, which primarily involve fluorescent approaches, and label-free nanoscale measurement tools, which include light scattering sensors, interferometric methods, photonic crystal sensors, and plasmonic sensors. For each of these areas, we have primarily focused on approaches that have either demonstrated operation outside of a traditional laboratory setting, including for example integration with mobile phones, or exhibited the potential for such operation in the near future. PMID:26068279

  14. Democratization of Nanoscale Imaging and Sensing Tools Using Photonics.

    PubMed

    McLeod, Euan; Wei, Qingshan; Ozcan, Aydogan

    2015-07-07

    Providing means for researchers and citizen scientists in the developing world to perform advanced measurements with nanoscale precision can help to accelerate the rate of discovery and invention as well as improve higher education and the training of the next generation of scientists and engineers worldwide. Here, we review some of the recent progress toward making optical nanoscale measurement tools more cost-effective, field-portable, and accessible to a significantly larger group of researchers and educators. We divide our review into two main sections: label-based nanoscale imaging and sensing tools, which primarily involve fluorescent approaches, and label-free nanoscale measurement tools, which include light scattering sensors, interferometric methods, photonic crystal sensors, and plasmonic sensors. For each of these areas, we have primarily focused on approaches that have either demonstrated operation outside of a traditional laboratory setting, including for example integration with mobile phones, or exhibited the potential for such operation in the near future.

  15. CMOS gate array characterization procedures

    NASA Astrophysics Data System (ADS)

    Spratt, James P.

    1993-09-01

    Present procedures are inadequate for characterizing the radiation hardness of gate array product lines prior to personalization because the selection of circuits to be used, from among all those available in the manufacturer's circuit library, is usually uncontrolled. (Some circuits are fundamentally more radiation resistant than others.) In such cases, differences in hardness can result between different designs of the same logic function. Hardness also varies because many gate arrays feature large custom-designed megacells (e.g., microprocessors and random access memories-MicroP's and RAM's). As a result, different product lines cannot be compared equally. A characterization strategy is needed, along with standardized test vehicle(s), methodology, and conditions, so that users can make informed judgments on which gate arrays are best suited for their needs. The program described developed preferred procedures for the radiation characterization of gate arrays, including a gate array evaluation test vehicle, featuring a canary circuit, designed to define the speed versus hardness envelope of the gate array. A multiplier was chosen for this role, and a baseline multiplier architecture is suggested that could be incorporated into an existing standard evaluation circuit chip.

  16. Plastic deformation and failure mechanisms in nano-scale notched metallic glass specimens under tensile loading

    NASA Astrophysics Data System (ADS)

    Dutta, Tanmay; Chauniyal, Ashish; Singh, I.; Narasimhan, R.; Thamburaja, P.; Ramamurty, U.

    2018-02-01

    In this work, numerical simulations using molecular dynamics and non-local plasticity based finite element analysis are carried out on tensile loading of nano-scale double edge notched metallic glass specimens. The effect of acuteness of notches as well as the metallic glass chemical composition or internal material length scale on the plastic deformation response of the specimens are studied. Both MD and FE simulations, in spite of the fundamental differences in their nature, indicate near-identical deformation features. Results show two distinct transitions in the notch tip deformation behavior as the acuity is increased, first from single shear band dominant plastic flow localization to ligament necking, and then to double shear banding in notches that are very sharp. Specimens with moderately blunt notches and composition showing wider shear bands or higher material length scale characterizing the interaction stress associated with flow defects display profuse plastic deformation and failure by ligament necking. These results are rationalized from the role of the interaction stress and development of the notch root plastic zones.

  17. Facile Fabrication of Binary Nanoscale Interface for No-Loss Microdroplet Transportation.

    PubMed

    Liang, Weitao; Zhu, Liqun; Li, Weiping; Xu, Chang; Liu, Huicong

    2016-06-07

    Binary nanoscale interfacial materials are fundamental issues in many applications for smart surfaces. A binary nanoscale interface with binary surface morphology and binary wetting behaviors has been prepared by a facile wet-chemical method. The prepared surface presents superhydrophobicity and high adhesion with the droplet at the same time. The composition, surface morphology, and wetting behaviors of the prepared surface have been systematic studied. The special wetting behaviors can be contributed to the binary nanoscale effect. The stability of the prepared surface was also investigated. As a primary application, a facile device based on the prepared binary nanoscale interface with superhydrophobicity and high adhesion was constructed for microdroplet transportation.

  18. Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors

    NASA Astrophysics Data System (ADS)

    Hu, Yaoqiao; San Yip, Pak; Tang, Chak Wah; Lau, Kei May; Li, Qiang

    2018-04-01

    Layered semiconductor molybdenum disulfide (MoS2) has recently emerged as a promising material for flexible electronic and optoelectronic devices because of its finite bandgap and high degree of gate control. Here, we report a hydrogen fluoride (HF) passivation technique for improving the carrier mobility and interface quality of chemical vapor deposited monolayer MoS2 on a SiO2/Si substrate. After passivation, the fabricated MoS2 back-gate transistors demonstrate a more than double improvement in average electron mobility, a reduced gate hysteresis gap of 3 V, and a low interface trapped charge density of ˜5.8 × 1011 cm-2. The improvements are attributed to the satisfied interface dangling bonds, thus a reduction of interface trap states and trapped charges. Surface x-ray photoelectron spectroscopy analysis and first-principles simulation were performed to verify the HF passivation effect. The results here highlight the necessity of a MoS2/dielectric passivation strategy and provides a viable route for enhancing the performance of MoS2 nano-electronic devices.

  19. Atomic Resolution in Situ Imaging of a Double-Bilayer Multistep Growth Mode in Gallium Nitride Nanowires

    DOE PAGES

    Gamalski, A. D.; Tersoff, J.; Stach, E. A.

    2016-04-13

    We study the growth of GaN nanowires from liquid Au–Ga catalysts using environmental transmission electron microscopy. GaN wires grow in either (11¯20) or (11¯00) directions, by the addition of {11¯00} double bilayers via step flow with multiple steps. Step-train growth is not typically seen with liquid catalysts, and we suggest that it results from low step mobility related to the unusual double-height step structure. Finally, the results here illustrate the surprising dynamics of catalytic GaN wire growth at the nanoscale and highlight striking differences between the growth of GaN and other III–V semiconductor nanowires.

  20. Influence of gate width on gate-channel carrier mobility in AlGaN/GaN heterostructure field-effect transistors

    NASA Astrophysics Data System (ADS)

    Yang, Ming; Ji, Qizheng; Gao, Zhiliang; Zhang, Shufeng; Lin, Zhaojun; Yuan, Yafei; Song, Bo; Mei, Gaofeng; Lu, Ziwei; He, Jihao

    2017-11-01

    For the fabricated AlGaN/GaN heterostructure field-effect transistors (HFETs) with different gate widths, the gate-channel carrier mobility is experimentally obtained from the measured current-voltage and capacitance-voltage curves. Under each gate voltage, the mobility gets lower with gate width increasing. Analysis shows that the phenomenon results from the polarization Coulomb field (PCF) scattering, which originates from the irregularly distributed polarization charges at the AlGaN/GaN interface. The device with a larger gate width is with a larger PCF scattering potential and a stronger PCF scattering intensity. As a function of gate width, PCF scattering potential shows a same trend with the mobility variation. And the theoretically calculated mobility values fits well with the experimentally obtained values. Varying gate widths will be a new perspective for the improvement of device characteristics by modulating the gate-channel carrier mobility.

  1. Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement

    NASA Astrophysics Data System (ADS)

    Raad, Bhagwan Ram; Nigam, Kaushal; Sharma, Dheeraj; Kondekar, P. N.

    2016-06-01

    This script features a study of bandgap, gate material work function and gate dielectric engineering for enhancement of DC and Analog/RF performance, reduction in the hot carriers effect (HCEs) and drain induced barrier lowering (DIBL) for better device reliability. In this concern, the use of band gap and gate material work function engineering improves the device performance in terms of the ON-state current and suppressed ambipolar behaviour with maintaining the low OFF-state current. With these advantages, the use of gate material work function engineering imposes restriction on the high frequency performance due to increment in the parasitic capacitances and also introduces the hot carrier effects. Hence, the gate dielectric engineering with bandgap and gate material work function engineering are used in this paper to overcome the cons of the gate material work function engineering by obtaining a superior performance in terms of the current driving capability, ambipolar conduction, HCEs, DIBL and high frequency parameters of the device for ultra-low power applications. Finally, the optimization of length for different work function is performed to get the best out of this.

  2. Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chun, Minkyu; Um, Jae Gwang; Park, Min Sang

    We report the abnormal behavior of the threshold voltage (V{sub TH}) shift under positive bias Temperature stress (PBTS) and negative bias temperature stress (NBTS) at top/bottom gate in dual gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). It is found that the PBTS at top gate shows negative transfer shift and NBTS shows positive transfer shift for both top and bottom gate sweep. The shift of bottom/top gate sweep is dominated by top gate bias (V{sub TG}), while bottom gate bias (V{sub BG}) is less effect than V{sub TG}. The X-ray photoelectron spectroscopy (XPS) depth profile provides the evidence of Inmore » metal diffusion to the top SiO{sub 2}/a-IGZO and also the existence of large amount of In{sup +} under positive top gate bias around top interfaces, thus negative transfer shift is observed. On the other hand, the formation of OH{sup −} at top interfaces under the stress of negative top gate bias shows negative transfer shift. The domination of V{sub TG} both on bottom/top gate sweep after PBTS/NBTS is obviously occurred due to thin active layer.« less

  3. Camel Gate Field Effect Transistors.

    DTIC Science & Technology

    1983-01-01

    CAMFETs can be designed to yield relatively voltage independent transconductances, large for- * ward turn-on voltages, and large gate-drain breakdown...doping. The FATFET area is 4.6 x 10- 4 cm2. I.- . - . . - , - 36 80 * Camel Gate U_-- Eperimental 60 * -Theoretical % Schottky Gate ~--Experimental CL 4...in the design of other devices. Finally, a comparative study of the reliabil- ities of CAMFETs, JFETs, and MESFETs should be attempted. 43 VII

  4. Control of Nanoscale Materials under the Toxic Substances Control Act

    EPA Pesticide Factsheets

    Many nanoscale materials are regarded as chemical substances, but they may have different properties than their larger counterparts. EPA is working to ensure that nanoscale materials are manufactured and used in ways that prevent risk to health.

  5. Nanoscale welding of multi-walled carbon nanotubes by 1064 nm fiber laser

    NASA Astrophysics Data System (ADS)

    Yuan, Yanping; Liu, Zhi; Zhang, Kaihu; Han, Weina; Chen, Jimin

    2018-07-01

    This study proposes an efficient approach which uses 1064 nm continuous fiber laser to achieve nanoscale welding of crossed multi-walled carbon nanotubes (MWCNTs). By changing the irradiation time, different quality of nanoscale welding is obtained. The morphology changes are investigated by scanning electron microscope (SEM) and transmission electron microscope (TEM). The experiments demonstrate that better quality of MWCNTs nanoscale welding after 3 s irradiation can be obtained. It is found that new graphene layers between crossed nanotubes induced by laser make the nanoscale welding achieved due to the absorption of laser energy.

  6. Effect of diatomic molecular properties on binary laser pulse optimizations of quantum gate operations.

    PubMed

    Zaari, Ryan R; Brown, Alex

    2011-07-28

    The importance of the ro-vibrational state energies on the ability to produce high fidelity binary shaped laser pulses for quantum logic gates is investigated. The single frequency 2-qubit ACNOT(1) and double frequency 2-qubit NOT(2) quantum gates are used as test cases to examine this behaviour. A range of diatomics is sampled. The laser pulses are optimized using a genetic algorithm for binary (two amplitude and two phase parameter) variation on a discretized frequency spectrum. The resulting trends in the fidelities were attributed to the intrinsic molecular properties and not the choice of method: a discretized frequency spectrum with genetic algorithm optimization. This is verified by using other common laser pulse optimization methods (including iterative optimal control theory), which result in the same qualitative trends in fidelity. The results differ from other studies that used vibrational state energies only. Moreover, appropriate choice of diatomic (relative ro-vibrational state arrangement) is critical for producing high fidelity optimized quantum logic gates. It is also suggested that global phase alignment imposes a significant restriction on obtaining high fidelity regions within the parameter search space. Overall, this indicates a complexity in the ability to provide appropriate binary laser pulse control of diatomics for molecular quantum computing. © 2011 American Institute of Physics

  7. Modeling Self-Heating Effects in Nanoscale Devices

    NASA Astrophysics Data System (ADS)

    Raleva, K.; Shaik, A. R.; Vasileska, D.; Goodnick, S. M.

    2017-08-01

    Accurate thermal modeling and the design of microelectronic devices and thin film structures at the micro- and nanoscales poses a challenge to electrical engineers who are less familiar with the basic concepts and ideas in sub-continuum heat transport. This book aims to bridge that gap. Efficient heat removal methods are necessary to increase device performance and device reliability. The authors provide readers with a combination of nanoscale experimental techniques and accurate modeling methods that must be employed in order to determine a device's temperature profile.

  8. Graduate Automotive Technology Education (GATE) Center

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Jeffrey Hodgson; David Irick

    2005-09-30

    The Graduate Automotive Technology Education (GATE) Center at the University of Tennessee, Knoxville has completed its sixth year of operation. During this period the Center has involved thirteen GATE Fellows and ten GATE Research Assistants in preparing them to contribute to advanced automotive technologies in the center's focus area: hybrid drive trains and control systems. Eighteen GATE students have graduated, and three have completed their course work requirements. Nine faculty members from three departments in the College of Engineering have been involved in the GATE Center. In addition to the impact that the Center has had on the students andmore » faculty involved, the presence of the center has led to the acquisition of resources that probably would not have been obtained if the GATE Center had not existed. Significant industry interaction such as internships, equipment donations, and support for GATE students has been realized. The value of the total resources brought to the university (including related research contracts) exceeds $4,000,000. Problem areas are discussed in the hope that future activities may benefit from the operation of the current program.« less

  9. Dynamically corrected gates for singlet-triplet spin qubits with control-dependent errors

    NASA Astrophysics Data System (ADS)

    Jacobson, N. Tobias; Witzel, Wayne M.; Nielsen, Erik; Carroll, Malcolm S.

    2013-03-01

    Magnetic field inhomogeneity due to random polarization of quasi-static local magnetic impurities is a major source of environmentally induced error for singlet-triplet double quantum dot (DQD) spin qubits. Moreover, for singlet-triplet qubits this error may depend on the applied controls. This effect is significant when a static magnetic field gradient is applied to enable full qubit control. Through a configuration interaction analysis, we observe that the dependence of the field inhomogeneity-induced error on the DQD bias voltage can vary systematically as a function of the controls for certain experimentally relevant operating regimes. To account for this effect, we have developed a straightforward prescription for adapting dynamically corrected gate sequences that assume control-independent errors into sequences that compensate for systematic control-dependent errors. We show that accounting for such errors may lead to a substantial increase in gate fidelities. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under contract DE-AC04-94AL85000.

  10. Quantum gate-set tomography

    NASA Astrophysics Data System (ADS)

    Blume-Kohout, Robin

    2014-03-01

    Quantum information technology is built on (1) physical qubits and (2) precise, accurate quantum logic gates that transform their states. Developing quantum logic gates requires good characterization - both in the development phase, where we need to identify a device's flaws so as to fix them, and in the production phase, where we need to make sure that the device works within specs and predict residual error rates and types. This task falls to quantum state and process tomography. But until recently, protocols for tomography relied on a pre-existing and perfectly calibrated reference frame comprising the measurements (and, for process tomography, input states) used to characterize the device. In practice, these measurements are neither independent nor perfectly known - they are usually implemented via exactly the same gates that we are trying to characterize! In the past year, several partial solutions to this self-consistency problem have been proposed. I will present a framework (gate set tomography, or GST) that addresses and resolves this problem, by self-consistently characterizing an entire set of quantum logic gates on a black-box quantum device. In particular, it contains an explicit closed-form protocol for linear-inversion gate set tomography (LGST), which is immune to both calibration error and technical pathologies like local maxima of the likelihood (which plagued earlier methods). GST also demonstrates significant (multiple orders of magnitude) improvements in efficiency over standard tomography by using data derived from long sequences of gates (much like randomized benchmarking). GST has now been applied to qubit devices in multiple technologies. I will present and discuss results of GST experiments in technologies including a single trapped-ion qubit and a silicon quantum dot qubit. Sandia National Laboratories is a multiprogram laboratory operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U

  11. NextGen Far-Term Concept Exploration for Integrated Gate-to-Gate Trajectory-Based Operations

    NASA Technical Reports Server (NTRS)

    Johnson, Sally C.; Barmore, Bryan E.

    2016-01-01

    NASA is currently conducting concept exploration studies toward the definition of a far-term, gate-to-gate concept for Trajectory-Based Operations. This paper presents a basic architectural framework for the far-term concept and discusses some observations about implementation of trajectory-based operations in the National Airspace System. Within the concept, operators and service providers collaboratively negotiate aircraft trajectories, providing agile, optimized, aircraft-specific routing to meet service provider gate-to-gate flow-management constraints and increasing capacity by smoothly and effectively combining flight-deck-based and ground-based metering, merging, and spacing in a mixed-equipage environment. The far-term TBO concept is intended to influence the direction of mid-term TBO research and to inform the definition of stable requirements and standards for TBO communications infrastructure and user equipage.

  12. Nanoscale control of an interfacial metal-insulator transition at room temperature.

    PubMed

    Cen, C; Thiel, S; Hammerl, G; Schneider, C W; Andersen, K E; Hellberg, C S; Mannhart, J; Levy, J

    2008-04-01

    Experimental and theoretical investigations have demonstrated that a quasi-two-dimensional electron gas (q-2DEG) can form at the interface between two insulators: non-polar SrTiO3 and polar LaTiO3 (ref. 2), LaAlO3 (refs 3-5), KTaO3 (ref. 7) or LaVO3 (ref. 6). Electronically, the situation is analogous to the q-2DEGs formed in semiconductor heterostructures by modulation doping. LaAlO3/SrTiO3 heterostructures have recently been shown to exhibit a hysteretic electric-field-induced metal-insulator quantum phase transition for LaAlO3 thicknesses of 3 unit cells. Here, we report the creation and erasure of nanoscale conducting regions at the interface between two insulating oxides, LaAlO3 and SrTiO3. Using voltages applied by a conducting atomic force microscope (AFM) probe, the buried LaAlO3/SrTiO3 interface is locally and reversibly switched between insulating and conducting states. Persistent field effects are observed using the AFM probe as a gate. Patterning of conducting lines with widths of approximately 3 nm, as well as arrays of conducting islands with densities >10(14) inch(-2), is demonstrated. The patterned structures are stable for >24 h at room temperature.

  13. Nanoscale array structures suitable for surface enhanced raman scattering and methods related thereto

    DOEpatents

    Bond, Tiziana C.; Miles, Robin; Davidson, James C.; Liu, Gang Logan

    2014-07-22

    Methods for fabricating nanoscale array structures suitable for surface enhanced Raman scattering, structures thus obtained, and methods to characterize the nanoscale array structures suitable for surface enhanced Raman scattering. Nanoscale array structures may comprise nanotrees, nanorecesses and tapered nanopillars.

  14. Nanoscale array structures suitable for surface enhanced raman scattering and methods related thereto

    DOEpatents

    Bond, Tiziana C.; Miles, Robin; Davidson, James C.; Liu, Gang Logan

    2015-07-14

    Methods for fabricating nanoscale array structures suitable for surface enhanced Raman scattering, structures thus obtained, and methods to characterize the nanoscale array structures suitable for surface enhanced Raman scattering. Nanoscale array structures may comprise nanotrees, nanorecesses and tapered nanopillars.

  15. Nanoscale array structures suitable for surface enhanced raman scattering and methods related thereto

    DOEpatents

    Bond, Tiziana C; Miles, Robin; Davidson, James; Liu, Gang Logan

    2015-11-03

    Methods for fabricating nanoscale array structures suitable for surface enhanced Raman scattering, structures thus obtained, and methods to characterize the nanoscale array structures suitable for surface enhanced Raman scattering. Nanoscale array structures may comprise nanotrees, nanorecesses and tapered nanopillars.

  16. THz-circuits driven by photo-thermoelectric, gate-tunable graphene-junctions

    NASA Astrophysics Data System (ADS)

    Brenneis, Andreas; Schade, Felix; Drieschner, Simon; Heimbach, Florian; Karl, Helmut; Garrido, Jose A.; Holleitner, Alexander W.

    2016-10-01

    For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomically thin graphene has been widely demonstrated to be suitable for photovoltaic and optoelectronic devices because of its broadband optical absorption and its high electron mobility. Moreover, the ultrafast relaxation of photogenerated charge carriers has been verified in graphene. Here, we show that dual-gated graphene junctions can be functional parts of THz-circuits. As the underlying optoelectronic process, we exploit ultrafast photo-thermoelectric currents. We describe an immediate photo-thermoelectric current of the unbiased device following a femtosecond laser excitation. For a picosecond time-scale after the optical excitation, an additional photo-thermoelectric contribution shows up, which exhibits the fingerprint of a spatially inverted temperature profile. The latter can be understood by the different time-constants and thermal coupling mechanisms of the electron and phonon baths within graphene to the substrate and the metal contacts. The interplay of the processes gives rise to ultrafast electromagnetic transients in high-frequency circuits, and it is equally important for a fundamental understanding of graphene-based ultrafast photodetectors and switches.

  17. THz-circuits driven by photo-thermoelectric, gate-tunable graphene-junctions

    PubMed Central

    Brenneis, Andreas; Schade, Felix; Drieschner, Simon; Heimbach, Florian; Karl, Helmut; Garrido, Jose A.; Holleitner, Alexander W.

    2016-01-01

    For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomically thin graphene has been widely demonstrated to be suitable for photovoltaic and optoelectronic devices because of its broadband optical absorption and its high electron mobility. Moreover, the ultrafast relaxation of photogenerated charge carriers has been verified in graphene. Here, we show that dual-gated graphene junctions can be functional parts of THz-circuits. As the underlying optoelectronic process, we exploit ultrafast photo-thermoelectric currents. We describe an immediate photo-thermoelectric current of the unbiased device following a femtosecond laser excitation. For a picosecond time-scale after the optical excitation, an additional photo-thermoelectric contribution shows up, which exhibits the fingerprint of a spatially inverted temperature profile. The latter can be understood by the different time-constants and thermal coupling mechanisms of the electron and phonon baths within graphene to the substrate and the metal contacts. The interplay of the processes gives rise to ultrafast electromagnetic transients in high-frequency circuits, and it is equally important for a fundamental understanding of graphene-based ultrafast photodetectors and switches. PMID:27762291

  18. THz-circuits driven by photo-thermoelectric, gate-tunable graphene-junctions.

    PubMed

    Brenneis, Andreas; Schade, Felix; Drieschner, Simon; Heimbach, Florian; Karl, Helmut; Garrido, Jose A; Holleitner, Alexander W

    2016-10-20

    For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomically thin graphene has been widely demonstrated to be suitable for photovoltaic and optoelectronic devices because of its broadband optical absorption and its high electron mobility. Moreover, the ultrafast relaxation of photogenerated charge carriers has been verified in graphene. Here, we show that dual-gated graphene junctions can be functional parts of THz-circuits. As the underlying optoelectronic process, we exploit ultrafast photo-thermoelectric currents. We describe an immediate photo-thermoelectric current of the unbiased device following a femtosecond laser excitation. For a picosecond time-scale after the optical excitation, an additional photo-thermoelectric contribution shows up, which exhibits the fingerprint of a spatially inverted temperature profile. The latter can be understood by the different time-constants and thermal coupling mechanisms of the electron and phonon baths within graphene to the substrate and the metal contacts. The interplay of the processes gives rise to ultrafast electromagnetic transients in high-frequency circuits, and it is equally important for a fundamental understanding of graphene-based ultrafast photodetectors and switches.

  19. Counterfactual Rydberg gate for photons

    NASA Astrophysics Data System (ADS)

    Garcia-Escartin, Juan Carlos; Chamorro-Posada, Pedro

    2012-03-01

    Quantum computation with photons requires efficient two-photon gates. We put forward a two-photon entangling gate which uses an intermediate atomic system. The system includes a single Rydberg atom which can switch on and off photon absorption in an ensemble using the dipole blockade. The gate is based in a counterfactual protocol. The mere possibility of an absorption that can only occur with a vanishing probability steers the photons to the desired final state.

  20. Strategy for improved frequency response of electric double-layer capacitors

    NASA Astrophysics Data System (ADS)

    Wada, Yoshifumi; Pu, Jiang; Takenobu, Taishi

    2015-10-01

    We propose a strategy for improving the response speed of electric double-layer capacitors (EDLCs) and electric double-layer transistors (EDLTs), based on an asymmetric structure with differently sized active materials and gate electrodes. We validate the strategy analytically by a classical calculation and experimentally by fabricating EDLCs with asymmetric Au electrodes (1:50 area ratio and 7.5 μm gap distance). The performance of the EDLCs is compared with that of conventional symmetric EDLCs. Our strategy dramatically improved the cut-off frequency from 14 to 93 kHz and this improvement is explained by fast charging of smaller electrodes. Therefore, this approach is particularly suitable to EDLTs, potentially expanding the applicability to medium speed (kHz-MHz) devices.

  1. P50 Sensory Gating and Attentional Performance

    PubMed Central

    Wan, Li; Friedman, Bruce H.; Boutros, Nash N.; Crawford, Helen J.

    2008-01-01

    Sensory gating refers to the preattentional filtering of irrelevant sensory stimuli. This process may be impaired in schizotypy, which is a trait also associated with cigarette smoking. This association may in part stem from the positive effects of smoking on sensory gating and attention. The relationship among sensory gating, smoking, schizotypy and attention was examined in 39 undergraduates. Sensory gating was indexed by the P50 suppression paradigm, and attention was measured by the Attention Network Test (ANT) and a Stroop task. Results showed sensory gating to be positively correlated with performances on ANT and Stroop reflected in better alerting, less conflict between stimuli, faster reaction time, and greater accuracy. Smokers showed a pattern of a greater number of significant correlations between sensory gating and attention in comparison to non-smokers, although the relationship between sensory gating and attention was not affected by schizotypy. The majority of significant correlations were found in the region surrounding Cz. These findings are discussed relative to the potential modifying influence of smoking and schizotypy on sensory gating and attention. PMID:18036692

  2. Retaining latch for a water pit gate

    DOEpatents

    Beale, A.R.

    1997-11-18

    A retaining latch is described for use in a hazardous materials storage or handling facility to adjustably retain a water pit gate in a gate frame. A retaining latch is provided comprising a latch plate which is rotatably mounted to each end of the top of the gate and a recessed opening, formed in the gate frame, for engaging an edge of the latch plate. The latch plate is circular in profile with one side cut away or flat, such that the latch plate is D-shaped. The remaining circular edge of the latch plate comprises steps of successively reduced thickness. The stepped edge of the latch plate fits inside a recessed opening formed in the gate frame. As the latch plate is rotated, alternate steps of the latch plate are engaged by the recessed opening. When the latch plate is rotated such that the flat portion of the latch plate faces the recessed opening in the gate frame, there is no connection between the opening and the latch plate and the gate is unlatched from the gate frame. 4 figs.

  3. 75 FR 49487 - Nanomaterial Case Study: Nanoscale Silver in Disinfectant Spray

    Federal Register 2010, 2011, 2012, 2013, 2014

    2010-08-13

    ... Study: Nanoscale Silver in Disinfectant Spray AGENCY: Environmental Protection Agency (EPA). ACTION... document ``Nanomaterial Case Study: Nanoscale Silver in Disinfectant Spray'' (EPA/600/R-10/081). The... 49488

  4. Statistical Determination of the Gating Windows for Respiratory-Gated Radiotherapy Using a Visible Guiding System.

    PubMed

    Oh, Se An; Yea, Ji Woon; Kim, Sung Kyu

    2016-01-01

    Respiratory-gated radiation therapy (RGRT) is used to minimize the radiation dose to normal tissue in lung-cancer patients. Although determining the gating window in the respiratory phase of patients is important in RGRT, it is not easy. Our aim was to determine the optimal gating window when using a visible guiding system for RGRT. Between April and October 2014, the breathing signals of 23 lung-cancer patients were recorded with a real-time position management (RPM) respiratory gating system (Varian, USA). We performed statistical analysis with breathing signals to find the optimal gating window for guided breathing in RGRT. When we compared breathing signals before and after the breathing training, 19 of the 23 patients showed statistically significant differences (p < 0.05). The standard deviation of the respiration signals after breathing training was lowest for phases of 30%-70%. The results showed that the optimal gating window in RGRT is 40% (30%-70%) with respect to repeatability for breathing after respiration training with the visible guiding system. RGRT was performed with the RPM system to confirm the usefulness of the visible guiding system. The RPM system and our visible guiding system improve the respiratory regularity, which in turn should improve the accuracy and efficiency of RGRT.

  5. Coherent Femtosecond Spectroscopy and Nonlinear Optical Imaging on the Nanoscale

    NASA Astrophysics Data System (ADS)

    Kravtsov, Vasily

    four-wave mixing response from the tip apex and investigate its microscopic mechanism. Our results reveal a significant contribution to the third order nonlinearity of plasmonic structures due to large near-field gradients associated with nanofocused plasmons. In combination with scanning probe imaging and femtosecond pulse shaping, the nanofocused four-wave mixing response provides a basis for a novel type of ultrafast optical microscopy on the nanoscale. We demonstrate its capabilities by nano-imaging the coherent dynamics of localized plasmonic modes in a rough gold film edge with simultaneous sub-50 nm spatial and sub-5 fs temporal resolution. We capture the coherent decay and extract the dephasing times of individual plasmonic modes. Lastly, we apply our technique to study nanoscale spatial heterogeneity of the nonlinear optical response in novel two-dimensional materials: monolayer and few-layer graphene. An enhanced four-wave mixing signal is revealed on the edges of graphene flakes. We investigate the mechanism of this enhancement by performing nano-imaging on a graphene field-effect transistor with the variable carrier density controlled by electrostatic gating.

  6. Organic transistors making use of room temperature ionic liquids as gating medium

    NASA Astrophysics Data System (ADS)

    Hoyos, Jonathan Javier Sayago

    The ability to couple ionic and electronic transport in organic transistors, based on pi conjugated organic materials for the transistor channel, can be particularly interesting to achieve low voltage transistor operation, i.e. below 1 V. The operation voltage in typical organic transistors based on conventional dielectrics (200 nm thick SiO2) is commonly higher than 10 V. Electrolyte-gated (EG) transistors, i.e. employing an electrolyte as the gating medium, permit current modulations of several orders of magnitude at relatively low gate voltages thanks to the exceptionally high capacitance at the electrolyte/transistor channel interface, in turn due to the low thickness (ca. 3 nm) of the electrical double layers forming at the electrolyte/semiconductor interface. Electrolytes based on room temperature ionic liquids (RTILs) are promising in EG transistor applications for their high electrochemical stability and good ionic conductivity. The main motivation behind this work is to achieve low voltage operation in organic transistors by making use of RTILs as gating medium. First we demonstrate the importance of the gate electrode material in the EG transistor performance. The use of high surface area carbon gate electrodes limits undesirable electrochemical processes and renders unnecessary the presence of a reference electrode to monitor the channel potential. This was demonstrated using activated carbon as gate electrode, the electronic conducting polymer MEH-PPV, poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene] channel material, and the ionic liquid [EMIM][TFSI] (1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide), as gating medium. Using high surface area gate electrodes resulted in sub-1 V operation and charge carrier mobilities of (1.0 +/- 0.5) x 10-2 cm2V -1s-1. A challenge in the field of EG transistors is to decrease their response time, a consequence of the slow ion redistribution in the transistor channel upon application of electric

  7. Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon

    NASA Astrophysics Data System (ADS)

    Mi, X.; Cady, J. V.; Zajac, D. M.; Stehlik, J.; Edge, L. F.; Petta, J. R.

    2017-01-01

    We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate g c / 2 π = 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon.

  8. Gates Speaks to Librarians.

    ERIC Educational Resources Information Center

    St. Lifer, Evan

    1997-01-01

    In an interview, Microsoft CEO Bill Gates answers questions about the Gates Library Foundation; Libraries Online; tax-support for libraries; comparisons to Andrew Carnegie; charges of "buying" the library market; Internet filters, policies, and government censorship; the future of the World Wide Web and the role of librarians in its…

  9. Field effect transistor with HfO2/Parylene-C bilayer hybrid gate insulator

    NASA Astrophysics Data System (ADS)

    Kumar, Neeraj; Kito, Ai; Inoue, Isao

    2015-03-01

    We have investigated the electric field control of the carrier density and the mobility at the surface of SrTiO3, a well known transition-metal oxide, in a field effect transistor (FET) geometry. We have used a Parylene-C (8 nm)/HfO2 (20 nm) double-layer gate insulator (GI), which can be a potential candidate for a solid state GI for the future Mott FETs. So far, only examples of the Mott FET used liquid electrolyte or ferroelectric oxides for the GI. However, possible electrochemical reaction at the interface causes damage to the surface of the Mott insulator. Thus, an alternative GI has been highly desired. We observed that even an ultra thin Parylene-C layer is effective for keeping the channel surface clean and free from oxygen vacancies. The 8 nm Parylene-C film has a relatively low resistance and consequentially its capacitance does not dominate the total capacitance of the Parylene-C/HfO2 GI. The breakdown gate voltage at 300 K is usually more than 10 V (~ 3.4 MV/cm). At gate voltage of 3 V the carrier density measured by the Hall effect is about 3 ×1013 cm-2, competent to cause the Mott transition. Moreover, the field effect mobility reaches in the range of 10 cm2/Vs indicating the Parylene-C passivated surface is actually very clean.

  10. Voltage Gated Ion Channel Function: Gating, Conduction, and the Role of Water and Protons

    PubMed Central

    Kariev, Alisher M.; Green, Michael E.

    2012-01-01

    Ion channels, which are found in every biological cell, regulate the concentration of electrolytes, and are responsible for multiple biological functions, including in particular the propagation of nerve impulses. The channels with the latter function are gated (opened) by a voltage signal, which allows Na+ into the cell and K+ out. These channels have several positively charged amino acids on a transmembrane domain of their voltage sensor, and it is generally considered, based primarily on two lines of experimental evidence, that these charges move with respect to the membrane to open the channel. At least three forms of motion, with greatly differing extents and mechanisms of motion, have been proposed. There is a “gating current”, a capacitative current preceding the channel opening, that corresponds to several charges (for one class of channel typically 12–13) crossing the membrane field, which may not require protein physically crossing a large fraction of the membrane. The coupling to the opening of the channel would in these models depend on the motion. The conduction itself is usually assumed to require the “gate” of the channel to be pulled apart to allow ions to enter as a section of the protein partially crosses the membrane, and a selectivity filter at the opposite end of the channel determines the ion which is allowed to pass through. We will here primarily consider K+ channels, although Na+ channels are similar. We propose that the mechanism of gating differs from that which is generally accepted, in that the positively charged residues need not move (there may be some motion, but not as gating current). Instead, protons may constitute the gating current, causing the gate to open; opening consists of only increasing the diameter at the gate from approximately 6 Å to approximately 12 Å. We propose in addition that the gate oscillates rather than simply opens, and the ion experiences a barrier to its motion across the channel that is tuned

  11. SU-E-T-350: Verification of Gating Performance of a New Elekta Gating Solution: Response Kit and Catalyst System

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Xie, X; Cao, D; Housley, D

    2014-06-01

    Purpose: In this work, we have tested the performance of new respiratory gating solutions for Elekta linacs. These solutions include the Response gating and the C-RAD Catalyst surface mapping system.Verification measurements have been performed for a series of clinical cases. We also examined the beam on latency of the system and its impact on delivery efficiency. Methods: To verify the benefits of tighter gating windows, a Quasar Respiratory Motion Platform was used. Its vertical-motion plate acted as a respiration surrogate and was tracked by the Catalyst system to generate gating signals. A MatriXX ion-chamber array was mounted on its longitudinal-movingmore » platform. Clinical plans are delivered to a stationary and moving Matrix array at 100%, 50% and 30% gating windows and gamma scores were calculated comparing moving delivery results to the stationary result. It is important to note that as one moves to tighter gating windows, the delivery efficiency will be impacted by the linac's beam-on latency. Using a specialized software package, we generated beam-on signals of lengths of 1000ms, 600ms, 450ms, 400ms, 350ms and 300ms. As the gating windows get tighter, one can expect to reach a point where the dose rate will fall to nearly zero, indicating that the gating window is close to beam-on latency. A clinically useful gating window needs to be significantly longer than the latency for the linac. Results: As expected, the use of tighter gating windows improved delivery accuracy. However, a lower limit of the gating window, largely defined by linac beam-on latency, exists at around 300ms. Conclusion: The Response gating kit, combined with the C-RAD Catalyst, provides an effective solution for respiratorygated treatment delivery. Careful patient selection, gating window design, even visual/audio coaching may be necessary to ensure both delivery quality and efficiency. This research project is funded by Elekta.« less

  12. Nanoscale hotspots due to nonequilibrium thermal transport.

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sinha, Sanjiv; Goodson, Kenneth E.

    2004-01-01

    Recent experimental and modeling efforts have been directed towards the issue of temperature localization and hotspot formation in the vicinity of nanoscale heat generating devices. The nonequilibrium transport conditions which develop around these nanoscale devices results in elevated temperatures near the heat source which can not be predicted by continuum diffusion theory. Efforts to determine the severity of this temperature localization phenomena in silicon devices near and above room temperature are of technological importance to the development of microelectronics and other nanotechnologies. In this work, we have developed a new modeling tool in order to explore the magnitude of themore » additional thermal resistance which forms around nanoscale hotspots from temperatures of 100-1000K. The models are based on a two fluid approximation in which thermal energy is transferred between ''stationary'' optical phonons and fast propagating acoustic phonon modes. The results of the model have shown excellent agreement with experimental results of localized hotspots in silicon at lower temperatures. The model predicts that the effect of added thermal resistance due to the nonequilibrium phonon distribution is greatest at lower temperatures, but is maintained out to temperatures of 1000K. The resistance predicted by the numerical code can be easily integrated with continuum models in order to predict the temperature distribution around nanoscale heat sources with improved accuracy. Additional research efforts also focused on the measurements of the thermal resistance of silicon thin films at higher temperatures, with a focus on polycrystalline silicon. This work was intended to provide much needed experimental data on the thermal transport properties for micro and nanoscale devices built with this material. Initial experiments have shown that the exposure of polycrystalline silicon to high temperatures may induce recrystallization and radically increase the thermal

  13. Discharge ratings for tainter gates and roller gates at Lock and Dam No. 7 on the Mississippi River, La Crescent, Minnesota

    USGS Publications Warehouse

    Corsi, Steven R.; Schuler, J.G.

    1995-01-01

    Coefficients of discharge (Cgs) ranged fron 0.126 (hg = 1 foot) to 1.089 (hg = 10 feet) for tainter gates and from 0.050 (hg = 1 foot) to 0.302 (hg = 14 feet) for roller gates. Disch^ge was measured at three different tainter gates with the gates closed (hg = 0) to evaluate tH tainter-gate leakage-discharge relations. No measurable leakage was observed. The resulting equations can be used to compute discharge at Lock and Dam No. 7 for the tainter and re Her gates under normal flow conditions. Discharge rating tables for the tainter and roller gates are given with a headwater elevation of 639.00 feet normal pool elevation for selected tailwate" elevations and gate openings.

  14. Double-injection, deep-impurity switch development

    NASA Technical Reports Server (NTRS)

    Whitson, D. W.

    1985-01-01

    The overall objective of this program was the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI) sup 2 silicon switch that operates in the 2-10 kV range with conduction current values of 5 A at 2 kV and 1 A at 10 kV. Other major specifications include a holding voltage of 10 V with no gate current, 10 microsec switching time, and power dissipation of 50 W at 75 C. It was decided to concentrate on the lateral circular devices in order to optimize the gold diffusion. This resulted in devices that are much better switches (approx.1 micro sec switching time), and in a gold diffusion process that is much more controllable than those previously developed. Some results with injection-gated devices were also obtained. The current conduction for V less than VT was analyzed and seen to agree, for the most part, with Lampert's theory. Various sections of this report describe the device designs, wafer-processing techniques, and various measurements which include ac and dc characteristics and four-point probe.

  15. Voltage-Gated Potassium Channels: A Structural Examination of Selectivity and Gating

    PubMed Central

    Kim, Dorothy M.; Nimigean, Crina M.

    2016-01-01

    Voltage-gated potassium channels play a fundamental role in the generation and propagation of the action potential. The discovery of these channels began with predictions made by early pioneers, and has culminated in their extensive functional and structural characterization by electrophysiological, spectroscopic, and crystallographic studies. With the aid of a variety of crystal structures of these channels, a highly detailed picture emerges of how the voltage-sensing domain reports changes in the membrane electric field and couples this to conformational changes in the activation gate. In addition, high-resolution structural and functional studies of K+ channel pores, such as KcsA and MthK, offer a comprehensive picture on how selectivity is achieved in K+ channels. Here, we illustrate the remarkable features of voltage-gated potassium channels and explain the mechanisms used by these machines with experimental data. PMID:27141052

  16. WDM Nanoscale Laser Diodes for Si Photonic Interconnects

    DTIC Science & Technology

    2016-07-25

    mounting on silicon. The nanoscale VCSELs can achieve small optical modes and present a compact laser diode that is also robust. In this work we have used...Distribution Unlimited UU UU UU UU 25-07-2016 1-Feb-2012 31-Dec-2015 Final Report: WDM Nanoscale Laser Diodes for Si Photonic Interconnects The views...P.O. Box 12211 Research Triangle Park, NC 27709-2211 VCSEL, optical interconnect, laser diode , semiconductor laser, microcavity REPORT DOCUMENTATION

  17. Nanoscale integration is the next frontier for nanotechnology

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Picraux, Samuel T

    2009-01-01

    Nanoscale integration of materials and structures is the next critical step to exploit the promise of nanomaterials. Many novel and fascinating properties have been revealed for nanostructured materials. But if nanotechnology is to live up to its promise we must incorporate these nanoscale building blocks into functional systems that connect to the micro- and macroscale world. To do this we will inevitably need to understand and exploit the resulting combined unique properties of these integrated nanosystems. Much science waits to be discovered in the process. Nanoscale integration extends from the synthesis and fabrication of individual nanoscale building blocks, to themore » assembly of these building blocks into composite structures, and finally to the formation of complex functional systems. As illustrated in Figure 1, the building blocks may be homogeneous or heterogeneous, the composite materials may be nanocomposite or patterned structures, and the functional systems will involve additional combinations of materials. Nanoscale integration involves assembling diverse nanoscale materials across length scales to design and achieve new properties and functionality. At each stage size-dependent properties, the influence of surfaces in close proximity, and a multitude of interfaces all come into play. Whether the final system involves coherent electrons in a quantum computing approach, the combined flow of phonons and electrons for a high efficiency thermoelectric micro-generator, or a molecular recognition structure for bio-sensing, the combined effects of size, surface, and interface will be critical. In essence, one wants to combine the novel functions available through nanoscale science to achieve unique multi-functionalities not available in bulk materials. Perhaps the best-known example of integration is that of combining electronic components together into very large scale integrated circuits (VLSI). The integrated circuit has revolutionized electronics

  18. Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

    DOE PAGES

    Cho, Seungho; Yun, Chao; Tappertzhofen, Stefan; ...

    2016-08-05

    Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO 2 and SrTiO 3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (~10 12 inch –2). Here, we systematicallymore » show that these devices allow precise engineering of the resistance states, thus enabling large on–off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.« less

  19. Realization of a double-barrier resonant tunneling diode for cavity polaritons.

    PubMed

    Nguyen, H S; Vishnevsky, D; Sturm, C; Tanese, D; Solnyshkov, D; Galopin, E; Lemaître, A; Sagnes, I; Amo, A; Malpuech, G; Bloch, J

    2013-06-07

    We report on the realization of a double-barrier resonant tunneling diode for cavity polaritons, by lateral patterning of a one-dimensional cavity. Sharp transmission resonances are demonstrated when sending a polariton flow onto the device. We show that a nonresonant beam can be used as an optical gate and can control the device transmission. Finally, we evidence distortion of the transmission profile when going to the high-density regime, signature of polariton-polariton interactions.

  20. Biosafe Nanoscale Pharmaceutical Adjuvant Materials

    PubMed Central

    Jin, Shubin; Li, Shengliang; Wang, Chongxi; Liu, Juan; Yang, Xiaolong; Wang, Paul C.; Zhang, Xin; Liang, Xing-Jie

    2014-01-01

    Thanks to developments in the field of nanotechnology over the past decades, more and more biosafe nanoscale materials have become available for use as pharmaceutical adjuvants in medical research. Nanomaterials possess unique properties which could be employed to develop drug carriers with longer circulation time, higher loading capacity, better stability in physiological conditions, controlled drug release, and targeted drug delivery. In this review article, we will review recent progress in the application of representative organic, inorganic and hybrid biosafe nanoscale materials in pharmaceutical research, especially focusing on nanomaterial-based novel drug delivery systems. In addition, we briefly discuss the advantages and notable functions that make these nanomaterials suitable for the design of new medicines; the biosafety of each material discussed in this article is also highlighted to provide a comprehensive understanding of their adjuvant attributes. PMID:25429253

  1. Respiratory gating and multifield technique radiotherapy for esophageal cancer.

    PubMed

    Ohta, Atsushi; Kaidu, Motoki; Tanabe, Satoshi; Utsunomiya, Satoru; Sasamoto, Ryuta; Maruyama, Katsuya; Tanaka, Kensuke; Saito, Hirotake; Nakano, Toshimichi; Shioi, Miki; Takahashi, Haruna; Kushima, Naotaka; Abe, Eisuke; Aoyama, Hidefumi

    2017-03-01

    To investigate the effects of a respiratory gating and multifield technique on the dose-volume histogram (DVH) in radiotherapy for esophageal cancer. Twenty patients who underwent four-dimensional computed tomography for esophageal cancer were included. We retrospectively created the four treatment plans for each patient, with or without the respiratory gating and multifield technique: No gating-2-field, No gating-4-field, Gating-2-field, and Gating-4-field plans. We compared the DVH parameters of the lung and heart in the No gating-2-field plan with the other three plans. In the comparison of the parameters in the No gating-2-field plan, there are significant differences in the Lung V 5Gy , V 20Gy , mean dose with all three plans and the Heart V 25Gy -V 40Gy with Gating-2-field plan, V 35Gy , V 40Gy , mean dose with No Gating-4-field plan and V 30Gy -V 40Gy , and mean dose with Gating-4-field plan. The lung parameters were smaller in the Gating-2-field plan and larger in the No gating-4-field and Gating-4-field plans. The heart parameters were all larger in the No gating-2-field plan. The lung parameters were reduced by the respiratory gating technique and increased by the multifield technique. The heart parameters were reduced by both techniques. It is important to select the optimal technique according to the risk of complications.

  2. Nanomaterial Case Study: Nanoscale Silver in Disinfectant Spray (Final Report)

    EPA Science Inventory

    EPA announced the release of the final report, Nanomaterial Case Study: Nanoscale Silver in Disinfectant Spray. This report represents a case study of engineered nanoscale silver (nano-Ag), focusing on the specific example of nano-Ag as possibly used in disinfectant spr...

  3. Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

    PubMed Central

    Bureau-Oxton, Chloé; Camirand Lemyre, Julien; Pioro-Ladrière, Michel

    2013-01-01

    A quantum computer is a computer composed of quantum bits (qubits) that takes advantage of quantum effects, such as superposition of states and entanglement, to solve certain problems exponentially faster than with the best known algorithms on a classical computer. Gate-defined lateral quantum dots on GaAs/AlGaAs are one of many avenues explored for the implementation of a qubit. When properly fabricated, such a device is able to trap a small number of electrons in a certain region of space. The spin states of these electrons can then be used to implement the logical 0 and 1 of the quantum bit. Given the nanometer scale of these quantum dots, cleanroom facilities offering specialized equipment- such as scanning electron microscopes and e-beam evaporators- are required for their fabrication. Great care must be taken throughout the fabrication process to maintain cleanliness of the sample surface and to avoid damaging the fragile gates of the structure. This paper presents the detailed fabrication protocol of gate-defined lateral quantum dots from the wafer to a working device. Characterization methods and representative results are also briefly discussed. Although this paper concentrates on double quantum dots, the fabrication process remains the same for single or triple dots or even arrays of quantum dots. Moreover, the protocol can be adapted to fabricate lateral quantum dots on other substrates, such as Si/SiGe. PMID:24300661

  4. Nanoscale relaxation oscillator

    DOEpatents

    Zettl, Alexander K.; Regan, Brian C.; Aloni, Shaul

    2009-04-07

    A nanoscale oscillation device is disclosed, wherein two nanoscale droplets are altered in size by mass transport, then contact each other and merge through surface tension. The device may also comprise a channel having an actuator responsive to mechanical oscillation caused by expansion and contraction of the droplets. It further has a structure for delivering atoms between droplets, wherein the droplets are nanoparticles. Provided are a first particle and a second particle on the channel member, both being made of a chargeable material, the second particle contacting the actuator portion; and electrodes connected to the channel member for delivering a potential gradient across the channel and traversing the first and second particles. The particles are spaced apart a specified distance so that atoms from one particle are delivered to the other particle by mass transport in response to the potential (e.g. voltage potential) and the first and second particles are liquid and touch at a predetermined point of growth, thereby causing merging of the second particle into the first particle by surface tension forces and reverse movement of the actuator. In a preferred embodiment, the channel comprises a carbon nanotube and the droplets comprise metal nanoparticles, e.g. indium, which is readily made liquid.

  5. Investigating Nanoscale Electrochemistry with Surface- and Tip-Enhanced Raman Spectroscopy.

    PubMed

    Zaleski, Stephanie; Wilson, Andrew J; Mattei, Michael; Chen, Xu; Goubert, Guillaume; Cardinal, M Fernanda; Willets, Katherine A; Van Duyne, Richard P

    2016-09-20

    The chemical sensitivity of surface-enhanced Raman spectroscopy (SERS) methodologies allows for the investigation of heterogeneous chemical reactions with high sensitivity. Specifically, SERS methodologies are well-suited to study electron transfer (ET) reactions, which lie at the heart of numerous fundamental processes: electrocatalysis, solar energy conversion, energy storage in batteries, and biological events such as photosynthesis. Heterogeneous ET reactions are commonly monitored by electrochemical methods such as cyclic voltammetry, observing billions of electrochemical events per second. Since the first proof of detecting single molecules by redox cycling, there has been growing interest in examining electrochemistry at the nanoscale and single-molecule levels. Doing so unravels details that would otherwise be obscured by an ensemble experiment. The use of optical spectroscopies, such as SERS, to elucidate nanoscale electrochemical behavior is an attractive alternative to traditional approaches such as scanning electrochemical microscopy (SECM). While techniques such as single-molecule fluorescence or electrogenerated chemiluminescence have been used to optically monitor electrochemical events, SERS methodologies, in particular, have shown great promise for exploring electrochemistry at the nanoscale. SERS is ideally suited to study nanoscale electrochemistry because the Raman-enhancing metallic, nanoscale substrate duly serves as the working electrode material. Moreover, SERS has the ability to directly probe single molecules without redox cycling and can achieve nanoscale spatial resolution in combination with super-resolution or scanning probe microscopies. This Account summarizes the latest progress from the Van Duyne and Willets groups toward understanding nanoelectrochemistry using Raman spectroscopic methodologies. The first half of this Account highlights three techniques that have been recently used to probe few- or single-molecule electrochemical

  6. Effects of charge noise on a pulse-gated singlet-triplet S - T_ qubit

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Qi, Zhenyi; Wu, X.; Ward, D. R.

    Here, we study the dynamics of a pulse-gated semiconductor double-quantum-dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We also show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from charge noise are largest near the singlet-triplet avoided level crossing, the visibility of the oscillations is low when the singlet-triplet avoided level crossing occurs in the vicinity of the charge degeneracy point crossed during the manipulation, but there ismore » only modest dephasing at the large detuning value at which the quantum phase accumulates. This theory also agrees with experimental data and predicts that the visibility can be increased greatly by appropriate tuning of the interdot tunneling rate.« less

  7. Effects of charge noise on a pulse-gated singlet-triplet S - T_ qubit

    DOE PAGES

    Qi, Zhenyi; Wu, X.; Ward, D. R.; ...

    2017-09-11

    Here, we study the dynamics of a pulse-gated semiconductor double-quantum-dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We also show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from charge noise are largest near the singlet-triplet avoided level crossing, the visibility of the oscillations is low when the singlet-triplet avoided level crossing occurs in the vicinity of the charge degeneracy point crossed during the manipulation, but there ismore » only modest dephasing at the large detuning value at which the quantum phase accumulates. This theory also agrees with experimental data and predicts that the visibility can be increased greatly by appropriate tuning of the interdot tunneling rate.« less

  8. Neuromorphic computing with nanoscale spintronic oscillators

    PubMed Central

    Torrejon, Jacob; Riou, Mathieu; Araujo, Flavio Abreu; Tsunegi, Sumito; Khalsa, Guru; Querlioz, Damien; Bortolotti, Paolo; Cros, Vincent; Fukushima, Akio; Kubota, Hitoshi; Yuasa, Shinji; Stiles, M. D.; Grollier, Julie

    2017-01-01

    Neurons in the brain behave as non-linear oscillators, which develop rhythmic activity and interact to process information1. Taking inspiration from this behavior to realize high density, low power neuromorphic computing will require huge numbers of nanoscale non-linear oscillators. Indeed, a simple estimation indicates that, in order to fit a hundred million oscillators organized in a two-dimensional array inside a chip the size of a thumb, their lateral dimensions must be smaller than one micrometer. However, despite multiple theoretical proposals2–5, and several candidates such as memristive6 or superconducting7 oscillators, there is no proof of concept today of neuromorphic computing with nano-oscillators. Indeed, nanoscale devices tend to be noisy and to lack the stability required to process data in a reliable way. Here, we show experimentally that a nanoscale spintronic oscillator8,9 can achieve spoken digit recognition with accuracies similar to state of the art neural networks. We pinpoint the regime of magnetization dynamics leading to highest performance. These results, combined with the exceptional ability of these spintronic oscillators to interact together, their long lifetime, and low energy consumption, open the path to fast, parallel, on-chip computation based on networks of oscillators. PMID:28748930

  9. Optically gated beating-heart imaging

    PubMed Central

    Taylor, Jonathan M.

    2014-01-01

    The constant motion of the beating heart presents an obstacle to clear optical imaging, especially 3D imaging, in small animals where direct optical imaging would otherwise be possible. Gating techniques exploit the periodic motion of the heart to computationally “freeze” this movement and overcome motion artifacts. Optically gated imaging represents a recent development of this, where image analysis is used to synchronize acquisition with the heartbeat in a completely non-invasive manner. This article will explain the concept of optical gating, discuss a range of different implementation strategies and their strengths and weaknesses. Finally we will illustrate the usefulness of the technique by discussing applications where optical gating has facilitated novel biological findings by allowing 3D in vivo imaging of cardiac myocytes in their natural environment of the beating heart. PMID:25566083

  10. Quantum rotation gates with controlled nonadiabatic evolutions

    NASA Astrophysics Data System (ADS)

    Abdelrahim, Abdelrahman A. H.; Benmachiche, Abderrahim; Subhi Mahmoud, Gharib; Messikh, Azeddine

    2018-04-01

    Quantum gates can be implemented adiabatically and nonadiabatically. Many schemes used at least two sequentially implemented gates to obtain an arbitrary one-qubit gate. Recently, it has been shown that nonadiabatic gates can be realized by single-shot implementation. It has also been shown that quantum gates can be implemented with controlled adiabatic evolutions. In this paper, we combine the advantage of single-shot implementation with controlled adiabatic evolutions to obtain controlled nonadiabatic evolutions. We also investigate the robustness to different types of errors. We find that the fidelity is close to unity for realistic decoherence rates.

  11. Plasmon-mediated chemical surface functionalization at the nanoscale

    NASA Astrophysics Data System (ADS)

    Nguyen, Mai; Lamouri, Aazdine; Salameh, Chrystelle; Lévi, Georges; Grand, Johan; Boubekeur-Lecaque, Leïla; Mangeney, Claire; Félidj, Nordin

    2016-04-01

    Controlling the surface grafting of species at the nanoscale remains a major challenge, likely to generate many opportunities in materials science. In this work, we propose an original strategy for chemical surface functionalization at the nanoscale, taking advantage of localized surface plasmon (LSP) excitation. The surface functionalization is demonstrated through aryl film grafting (derived from a diazonium salt), covalently bonded at the surface of gold lithographic nanostripes. The aryl film is specifically grafted in areas of maximum near field enhancement, as confirmed by numerical calculation based on the discrete dipole approximation method. The energy of the incident light and the LSP wavelength are shown to be crucial parameters to monitor the aryl film thickness of up to ~30 nm. This robust and versatile strategy opens up exciting prospects for the nanoscale confinement of functional layers on surfaces, which should be particularly interesting for molecular sensing or nanooptics.Controlling the surface grafting of species at the nanoscale remains a major challenge, likely to generate many opportunities in materials science. In this work, we propose an original strategy for chemical surface functionalization at the nanoscale, taking advantage of localized surface plasmon (LSP) excitation. The surface functionalization is demonstrated through aryl film grafting (derived from a diazonium salt), covalently bonded at the surface of gold lithographic nanostripes. The aryl film is specifically grafted in areas of maximum near field enhancement, as confirmed by numerical calculation based on the discrete dipole approximation method. The energy of the incident light and the LSP wavelength are shown to be crucial parameters to monitor the aryl film thickness of up to ~30 nm. This robust and versatile strategy opens up exciting prospects for the nanoscale confinement of functional layers on surfaces, which should be particularly interesting for molecular sensing

  12. Adaptive Circuits for the 0.5-V Nanoscale CMOS Era

    NASA Astrophysics Data System (ADS)

    Itoh, Kiyoo; Yamaoka, Masanao; Oshima, Takashi

    The minimum operating voltage, Vmin, of nanoscale CMOS LSIs is investigated to breach the 1-V wall that we are facing in the 65-nm device generation, and open the door to the below 0.5-V era. A new method using speed variation is proposed to evaluate Vmin. It shows that Vmin is very sensitive to the lowest necessary threshold voltage, Vt0, of MOSFETs and to threshold-voltage variations, ΔVt, which become more significant with device scaling. There is thus a need for low-Vt0 circuits and ΔVt-immune MOSFETs to reduce Vmin. For memory-rich LSIs, the SRAM block is particularly problematic because it has the highest Vmin. Various techniques are thus proposed to reduce the Vmin: using RAM repair, shortening the data line, up-sizing, and using more relaxed MOSFET scaling. To effectively reduce Vmin of other circuit blocks, dual-Vt0 and dual-VDD circuits using gate-source reverse biasing, temporary activation, and series connection of another small low-Vt0 MOSFET are proposed. They are dynamic logic circuits enabling the power-delay product of the conventional static CMOS inverter to be reduced to 0.09 at a 0.2-V supply, and a DRAM dynamic sense amplifier and power switches operable at below 0.5V. In addition, a fully-depleted structure (FD-SOI) and fin-type structure (FinFET) for Vt-immune MOSFETs are discussed in terms of their low-voltage potential and challenges. As a result, the height up-scalable FinFETs turns out to be quite effective to reduce Vmin to less than 0.5V, if combined with the low-Vt0 circuits. For mixed-signal LSIs, investigation of low-voltage potential of analog circuits, especially for comparators and operational amplifiers, reveals that simple inverter op-amps, in which the low gain and nonlinearity are compensated for by digitally assisted analog designs, are crucial to 0.5-V operations. Finally, it is emphasized that the development of relevant devices and fabrication processes is the key to the achievement of 0.5-V nanoscale LSIs.

  13. Generation of tunable double Fano resonances by plasmon hybridization in graphene–metal metamaterial

    NASA Astrophysics Data System (ADS)

    Yan, Zhendong; Qian, Lina; Zhan, Peng; Wang, Zhenlin

    2018-07-01

    We proposed the excitation of double Fano resonances by the destructive interference between the narrow electric symmetric/antisymmetric resonant modes formed by plasmon hybridization and a broad magnetic dipole resonance in a novel hybrid metamaterial composed of periodically patterned stacked graphene–ribbon pairs and gold split-ring resonators. The double Fano transparency windows in this hybrid metamaterial can be actively controlled by tuning the Fermi energy of graphene through the use of electric gating and its electronic mobility. Our designed dual Fano resonances exhibit a large group index associated with the resonance response in the transparency windows, suggesting promising applications in nanophotonics, such as a slow light device.

  14. Golden Gate Vanpool Demonstration Project

    DOT National Transportation Integrated Search

    1979-07-01

    The report evaluates the Golden Gate Vanpool Demonstration Project activities begun in October 1977. The objective of the demonstration is to successfuly promote commuter ridesharing through vanpools. The project grantee, the Golden Gate Bridge, High...

  15. Molecular basis of the interaction between gating modifier spider toxins and the voltage sensor of voltage-gated ion channels

    NASA Astrophysics Data System (ADS)

    Lau, Carus H. Y.; King, Glenn F.; Mobli, Mehdi

    2016-09-01

    Voltage-sensor domains (VSDs) are modular transmembrane domains of voltage-gated ion channels that respond to changes in membrane potential by undergoing conformational changes that are coupled to gating of the ion-conducting pore. Most spider-venom peptides function as gating modifiers by binding to the VSDs of voltage-gated channels and trapping them in a closed or open state. To understand the molecular basis underlying this mode of action, we used nuclear magnetic resonance to delineate the atomic details of the interaction between the VSD of the voltage-gated potassium channel KvAP and the spider-venom peptide VSTx1. Our data reveal that the toxin interacts with residues in an aqueous cleft formed between the extracellular S1-S2 and S3-S4 loops of the VSD whilst maintaining lipid interactions in the gaps formed between the S1-S4 and S2-S3 helices. The resulting network of interactions increases the energetic barrier to the conformational changes required for channel gating, and we propose that this is the mechanism by which gating modifier toxins inhibit voltage-gated ion channels.

  16. Gate length variation effect on performance of gate-first self-aligned In₀.₅₃Ga₀.₄₇As MOSFET.

    PubMed

    Mohd Razip Wee, Mohd F; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y

    2013-01-01

    A multi-gate n-type In₀.₅₃Ga₀.₄₇As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm(2)/Vs are achieved for the gate length and width of 0.2 µm and 30 µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10(-8) A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared.

  17. Gate Length Variation Effect on Performance of Gate-First Self-Aligned In0.53Ga0.47As MOSFET

    PubMed Central

    Mohd Razip Wee, Mohd F.; Dehzangi, Arash; Bollaert, Sylvain; Wichmann, Nicolas; Majlis, Burhanuddin Y.

    2013-01-01

    A multi-gate n-type In0.53Ga0.47As MOSFET is fabricated using gate-first self-aligned method and air-bridge technology. The devices with different gate lengths were fabricated with the Al2O3 oxide layer with the thickness of 8 nm. In this letter, impact of gate length variation on device parameter such as threshold voltage, high and low voltage transconductance, subthreshold swing and off current are investigated at room temperature. Scaling the gate length revealed good enhancement in all investigated parameters but the negative shift in threshold voltage was observed for shorter gate lengths. The high drain current of 1.13 A/mm and maximum extrinsic transconductance of 678 mS/mm with the field effect mobility of 364 cm2/Vs are achieved for the gate length and width of 0.2 µm and 30µm, respectively. The source/drain overlap length for the device is approximately extracted about 51 nm with the leakage current in order of 10−8 A. The results of RF measurement for cut-off and maximum oscillation frequency for devices with different gate lengths are compared. PMID:24367548

  18. Fabrication of Nanoscale Circuits on Inkjet-Printing Patterned Substrates.

    PubMed

    Chen, Shuoran; Su, Meng; Zhang, Cong; Gao, Meng; Bao, Bin; Yang, Qiang; Su, Bin; Song, Yanlin

    2015-07-08

    Nanoscale circuits are fabricated by assembling different conducting materials (e.g., metal nanoparticles, metal nano-wires, graphene, carbon nanotubes, and conducting polymers) on inkjet-printing patterned substrates. This non-litho-graphy strategy opens a new avenue for integrating conducting building blocks into nanoscale devices in a cost-efficient manner. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Audio-visual biofeedback for respiratory-gated radiotherapy: Impact of audio instruction and audio-visual biofeedback on respiratory-gated radiotherapy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    George, Rohini; Department of Biomedical Engineering, Virginia Commonwealth University, Richmond, VA; Chung, Theodore D.

    2006-07-01

    Purpose: Respiratory gating is a commercially available technology for reducing the deleterious effects of motion during imaging and treatment. The efficacy of gating is dependent on the reproducibility within and between respiratory cycles during imaging and treatment. The aim of this study was to determine whether audio-visual biofeedback can improve respiratory reproducibility by decreasing residual motion and therefore increasing the accuracy of gated radiotherapy. Methods and Materials: A total of 331 respiratory traces were collected from 24 lung cancer patients. The protocol consisted of five breathing training sessions spaced about a week apart. Within each session the patients initially breathedmore » without any instruction (free breathing), with audio instructions and with audio-visual biofeedback. Residual motion was quantified by the standard deviation of the respiratory signal within the gating window. Results: Audio-visual biofeedback significantly reduced residual motion compared with free breathing and audio instruction. Displacement-based gating has lower residual motion than phase-based gating. Little reduction in residual motion was found for duty cycles less than 30%; for duty cycles above 50% there was a sharp increase in residual motion. Conclusions: The efficiency and reproducibility of gating can be improved by: incorporating audio-visual biofeedback, using a 30-50% duty cycle, gating during exhalation, and using displacement-based gating.« less

  20. A Theoretical Review on Interfacial Thermal Transport at the Nanoscale.

    PubMed

    Zhang, Ping; Yuan, Peng; Jiang, Xiong; Zhai, Siping; Zeng, Jianhua; Xian, Yaoqi; Qin, Hongbo; Yang, Daoguo

    2018-01-01

    With the development of energy science and electronic technology, interfacial thermal transport has become a key issue for nanoelectronics, nanocomposites, energy transmission, and conservation, etc. The application of thermal interfacial materials and other physical methods can reliably improve the contact between joined surfaces and enhance interfacial thermal transport at the macroscale. With the growing importance of thermal management in micro/nanoscale devices, controlling and tuning the interfacial thermal resistance (ITR) at the nanoscale is an urgent task. This Review examines nanoscale interfacial thermal transport mainly from a theoretical perspective. Traditional theoretical models, multiscale models, and atomistic methodologies for predicting ITR are introduced. Based on the analysis and summary of the factors that influence ITR, new methods to control and reduce ITR at the nanoscale are described in detail. Furthermore, the challenges facing interfacial thermal management and the further progress required in this field are discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device.

    PubMed

    Park, Sangsu; Noh, Jinwoo; Choo, Myung-Lae; Sheri, Ahmad Muqeem; Chang, Man; Kim, Young-Bae; Kim, Chang Jung; Jeon, Moongu; Lee, Byung-Geun; Lee, Byoung Hun; Hwang, Hyunsang

    2013-09-27

    Efforts to develop scalable learning algorithms for implementation of networks of spiking neurons in silicon have been hindered by the considerable footprints of learning circuits, which grow as the number of synapses increases. Recent developments in nanotechnologies provide an extremely compact device with low-power consumption.In particular, nanoscale resistive switching devices (resistive random-access memory (RRAM)) are regarded as a promising solution for implementation of biological synapses due to their nanoscale dimensions, capacity to store multiple bits and the low energy required to operate distinct states. In this paper, we report the fabrication, modeling and implementation of nanoscale RRAM with multi-level storage capability for an electronic synapse device. In addition, we first experimentally demonstrate the learning capabilities and predictable performance by a neuromorphic circuit composed of a nanoscale 1 kbit RRAM cross-point array of synapses and complementary metal-oxide-semiconductor neuron circuits. These developments open up possibilities for the development of ubiquitous ultra-dense, ultra-low-power cognitive computers.

  2. Notes on stochastic (bio)-logic gates: computing with allosteric cooperativity

    PubMed Central

    Agliari, Elena; Altavilla, Matteo; Barra, Adriano; Dello Schiavo, Lorenzo; Katz, Evgeny

    2015-01-01

    Recent experimental breakthroughs have finally allowed to implement in-vitro reaction kinetics (the so called enzyme based logic) which code for two-inputs logic gates and mimic the stochastic AND (and NAND) as well as the stochastic OR (and NOR). This accomplishment, together with the already-known single-input gates (performing as YES and NOT), provides a logic base and paves the way to the development of powerful biotechnological devices. However, as biochemical systems are always affected by the presence of noise (e.g. thermal), standard logic is not the correct theoretical reference framework, rather we show that statistical mechanics can work for this scope: here we formulate a complete statistical mechanical description of the Monod-Wyman-Changeaux allosteric model for both single and double ligand systems, with the purpose of exploring their practical capabilities to express noisy logical operators and/or perform stochastic logical operations. Mixing statistical mechanics with logics, and testing quantitatively the resulting findings on the available biochemical data, we successfully revise the concept of cooperativity (and anti-cooperativity) for allosteric systems, with particular emphasis on its computational capabilities, the related ranges and scaling of the involved parameters and its differences with classical cooperativity (and anti-cooperativity). PMID:25976626

  3. Notes on stochastic (bio)-logic gates: computing with allosteric cooperativity.

    PubMed

    Agliari, Elena; Altavilla, Matteo; Barra, Adriano; Dello Schiavo, Lorenzo; Katz, Evgeny

    2015-05-15

    Recent experimental breakthroughs have finally allowed to implement in-vitro reaction kinetics (the so called enzyme based logic) which code for two-inputs logic gates and mimic the stochastic AND (and NAND) as well as the stochastic OR (and NOR). This accomplishment, together with the already-known single-input gates (performing as YES and NOT), provides a logic base and paves the way to the development of powerful biotechnological devices. However, as biochemical systems are always affected by the presence of noise (e.g. thermal), standard logic is not the correct theoretical reference framework, rather we show that statistical mechanics can work for this scope: here we formulate a complete statistical mechanical description of the Monod-Wyman-Changeaux allosteric model for both single and double ligand systems, with the purpose of exploring their practical capabilities to express noisy logical operators and/or perform stochastic logical operations. Mixing statistical mechanics with logics, and testing quantitatively the resulting findings on the available biochemical data, we successfully revise the concept of cooperativity (and anti-cooperativity) for allosteric systems, with particular emphasis on its computational capabilities, the related ranges and scaling of the involved parameters and its differences with classical cooperativity (and anti-cooperativity).

  4. Notes on stochastic (bio)-logic gates: computing with allosteric cooperativity

    NASA Astrophysics Data System (ADS)

    Agliari, Elena; Altavilla, Matteo; Barra, Adriano; Dello Schiavo, Lorenzo; Katz, Evgeny

    2015-05-01

    Recent experimental breakthroughs have finally allowed to implement in-vitro reaction kinetics (the so called enzyme based logic) which code for two-inputs logic gates and mimic the stochastic AND (and NAND) as well as the stochastic OR (and NOR). This accomplishment, together with the already-known single-input gates (performing as YES and NOT), provides a logic base and paves the way to the development of powerful biotechnological devices. However, as biochemical systems are always affected by the presence of noise (e.g. thermal), standard logic is not the correct theoretical reference framework, rather we show that statistical mechanics can work for this scope: here we formulate a complete statistical mechanical description of the Monod-Wyman-Changeaux allosteric model for both single and double ligand systems, with the purpose of exploring their practical capabilities to express noisy logical operators and/or perform stochastic logical operations. Mixing statistical mechanics with logics, and testing quantitatively the resulting findings on the available biochemical data, we successfully revise the concept of cooperativity (and anti-cooperativity) for allosteric systems, with particular emphasis on its computational capabilities, the related ranges and scaling of the involved parameters and its differences with classical cooperativity (and anti-cooperativity).

  5. Extraction of the gate capacitance coupling coefficient in floating gate non-volatile memories: Statistical study of the effect of mismatching between floating gate memory and reference transistor in dummy cell extraction methods

    NASA Astrophysics Data System (ADS)

    Rafhay, Quentin; Beug, M. Florian; Duane, Russell

    2007-04-01

    This paper presents an experimental comparison of dummy cell extraction methods of the gate capacitance coupling coefficient for floating gate non-volatile memory structures from different geometries and technologies. These results show the significant influence of mismatching floating gate devices and reference transistors on the extraction of the gate capacitance coupling coefficient. In addition, it demonstrates the accuracy of the new bulk bias dummy cell extraction method and the importance of the β function, introduced recently in [Duane R, Beug F, Mathewson A. Novel capacitance coupling coefficient measurement methodology for floating gate non-volatile memory devices. IEEE Electr Dev Lett 2005;26(7):507-9], to determine matching pairs of floating gate memory and reference transistor.

  6. Nanoscale Substances on the TSCA Inventory

    EPA Pesticide Factsheets

    This document is to help the regulated community comply with the requirements of the Toxic Substances Control Act (TSCA) Section 5 Premanufacturing Notice (PMN) Program for nanoscale chemical substances.

  7. Direct Probing of Polarization Charge at Nanoscale Level

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kwon, Owoong; Seol, Daehee; Lee, Dongkyu

    Ferroelectric materials possess spontaneous polarization that can be used for multiple applications. Owing to a long-term development of reducing the sizes of devices, the preparation of ferroelectric materials and devices is entering the nanometer-scale regime. In order to evaluate the ferroelectricity, there is a need to investigate the polarization charge at the nanoscale. Nonetheless, it is generally accepted that the detection of polarization charges using a conventional conductive atomic force microscopy (CAFM) without a top electrode is not feasible because the nanometer-scale radius of an atomic force microscopy (AFM) tip yields a very low signal-to-noise ratio. But, the detection ismore » unrelated to the radius of an AFM tip and, in fact, a matter of the switched area. In this work, the direct probing of the polarization charge at the nanoscale is demonstrated using the positive-up-negative-down method based on the conventional CAFM approach without additional corrections or circuits to reduce the parasitic capacitance. The polarization charge densities of 73.7 and 119.0 µC cm -2 are successfully probed in ferroelectric nanocapacitors and thin films, respectively. The results we obtained show the feasibility of the evaluation of polarization charge at the nanoscale and provide a new guideline for evaluating the ferroelectricity at the nanoscale.« less

  8. T-gate geometric (solution for submicrometer gate length) HEMT: Physical analysis, modeling and implementation as parasitic elements and its usage as dual gate for variable gain amplifiers

    NASA Astrophysics Data System (ADS)

    Gupta, Ritesh; Rathi, Servin; Kaur, Ravneet; Gupta, Mridula; Gupta, R. S.

    2009-03-01

    In order to achieve superior RF performance, short gate length is required for the compound semiconductor field effect transistors, but the limitation in lithography for submicrometer gate lengths leads to the formation of various metal-insulator geometries like T-gate [Sandeep R. Bahl, Jesus A. del Alamo, Physics of breakdown in InAlAs/ n +-InGaAs heterostructure field-effect transistors, IEEE Trans. Electron Devices 41 (12) (1994) 2268-2275]. These geometries are the combination of various Metal-Semiconductor (MS)/Metal-Air-Semiconductor (MAS) contacts. Moreover, field plates [S. Karmalkar, M.S. Shur, G. Simin, M. Asif Khan, Field-plate engineering for HFETs, IEEE Trans. Electron Devices 52 (2005) 2534-2540] are also being fabricated these days, mainly at the drain end ( Γ-gate) having Metal-Insulator-Semiconductor (MIS) instead of MAS contact with the intention of increasing the breakdown voltage of the device. To realize the effect of upper gate electrode in the T-gate structure and field plates, an analytical model has been proposed in the present article by dividing the whole structure into MS/MIS contact regions, applying current continuity among them and solving iteratively. The model proposed for Metal-Insulator Semiconductor High Electron Mobility Transistor (MISHEMT) [R. Gupta, S.K. Aggarwal, M. Gupta, R.S. Gupta, Analytical model for metal insulator semiconductor high electron mobility transistor (MISHEMT) for its high frequency and high power applications, J. Semicond. Technol. Sci. 6 (3) (2006) 189-198], is equally applicable to High Electron Mobility Transistors (HEMT) and has been used to formulate this model. In this paper, various structures and geometries have been compared to anticipate the need of T-gate modeling. The effect of MIS contacts has been implemented as parasitic resistance and capacitance and has also been studied to control the middle conventional gate as in dual gate technology by applying separate voltages across it. The results

  9. High-Fidelity Single-Shot Toffoli Gate via Quantum Control.

    PubMed

    Zahedinejad, Ehsan; Ghosh, Joydip; Sanders, Barry C

    2015-05-22

    A single-shot Toffoli, or controlled-controlled-not, gate is desirable for classical and quantum information processing. The Toffoli gate alone is universal for reversible computing and, accompanied by the Hadamard gate, forms a universal gate set for quantum computing. The Toffoli gate is also a key ingredient for (nontopological) quantum error correction. Currently Toffoli gates are achieved by decomposing into sequentially implemented single- and two-qubit gates, which require much longer times and yields lower overall fidelities compared to a single-shot implementation. We develop a quantum-control procedure to construct a single-shot Toffoli gate for three nearest-neighbor-coupled superconducting transmon systems such that the fidelity is 99.9% and is as fast as an entangling two-qubit gate under the same realistic conditions. The gate is achieved by a nongreedy quantum control procedure using our enhanced version of the differential evolution algorithm.

  10. MEMS Gate Structures for Electric Propulsion Applications

    DTIC Science & Technology

    2006-07-12

    distance between gates of dual gate system V = grid voltage Dsheath = sheath thickness Va = anode voltage E = electric field Vemitter = emitter voltage Es...minutes. A hot pressed boron nitride target (4N) in the hexagonal phase (h- BN) was sputtered in a RF magnetron sputtering gun. To promote the nucleation...and nanoFETs. This paper concludes with a discussion on using MEMS gates for dual -grid electron field emission applications. II. Gate Design I I

  11. Prophase pathway-dependent removal of cohesin from human chromosomes requires opening of the Smc3–Scc1 gate

    PubMed Central

    Buheitel, Johannes; Stemmann, Olaf

    2013-01-01

    Faithful transmission of chromosomes during eukaryotic cell division requires sister chromatids to be paired from their generation in S phase until their separation in M phase. Cohesion is mediated by the cohesin complex, whose Smc1, Smc3 and Scc1 subunits form a tripartite ring that entraps both DNA double strands. Whereas centromeric cohesin is removed in late metaphase by Scc1 cleavage, metazoan cohesin at chromosome arms is displaced already in prophase by proteolysis-independent signalling. Which of the three gates is triggered by the prophase pathway to open has remained enigmatic. Here, we show that displacement of human cohesin from early mitotic chromosomes requires dissociation of Smc3 from Scc1 but no opening of the other two gates. In contrast, loading of human cohesin onto chromatin in telophase occurs through the Smc1–Smc3 hinge. We propose that the use of differently regulated gates for loading and release facilitates unidirectionality of DNA's entry into and exit from the cohesin ring. PMID:23361318

  12. Systems engineering at the nanoscale

    NASA Astrophysics Data System (ADS)

    Benkoski, Jason J.; Breidenich, Jennifer L.; Wei, Michael C.; Clatterbaughi, Guy V.; Keng, Pei Yuin; Pyun, Jeffrey

    2012-06-01

    Nanomaterials have provided some of the greatest leaps in technology over the past twenty years, but their relatively early stage of maturity presents challenges for their incorporation into engineered systems. Perhaps even more challenging is the fact that the underlying physics at the nanoscale often run counter to our physical intuition. The current state of nanotechnology today includes nanoscale materials and devices developed to function as components of systems, as well as theoretical visions for "nanosystems," which are systems in which all components are based on nanotechnology. Although examples will be given to show that nanomaterials have indeed matured into applications in medical, space, and military systems, no complete nanosystem has yet been realized. This discussion will therefore focus on systems in which nanotechnology plays a central role. Using self-assembled magnetic artificial cilia as an example, we will discuss how systems engineering concepts apply to nanotechnology.

  13. Time-gated FLIM microscope for corneal metabolic imaging

    NASA Astrophysics Data System (ADS)

    Silva, Susana F.; Batista, Ana; Domingues, José Paulo; Quadrado, Maria João.; Morgado, António Miguel

    2016-03-01

    Detecting corneal cells metabolic alterations may prove a valuable tool in the early diagnosis of corneal diseases. Nicotinamide adenine dinucleotide (NADH) and flavin adenine dinucleotide (FAD) are autofluorescent metabolic co-factors that allow the assessment of metabolic changes through non-invasive optical methods. These co-factors exhibit double-exponential fluorescence decays, with well-separated short and lifetime components, which are related to their protein-bound and free-states. Corneal metabolism can be assessed by measuring the relative contributions of these two components. For that purpose, we have developed a wide-field time-gated fluorescence lifetime microscope based on structured illumination and one-photon excitation to record FAD lifetime images from corneas. NADH imaging was not considered as its UV excitation peak is regarded as not safe for in vivo measurements. The microscope relies on a pulsed blue diode laser (λ=443 nm) as excitation source, an ultra-high speed gated image intensifier coupled to a CCD camera to acquire fluorescence signals and a Digital Micromirror Device (DMD) to implement the Structured Illumination technique. The system has a lateral resolution better than 2.4 μm, a field of view of 160 per 120 μm and an optical sectioning of 6.91 +/- 0.45 μm when used with a 40x, 0.75 NA, Water Immersion Objective. With this setup we were able to measure FAD contributions from ex-vivo chicken corneas collected from a local slaughterhouse..

  14. Structured-gate organic field-effect transistors

    NASA Astrophysics Data System (ADS)

    Aljada, Muhsen; Pandey, Ajay K.; Velusamy, Marappan; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

    2012-06-01

    We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO2) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends.

  15. Quantifying Nanoscale Order in Amorphous Materials via Fluctuation Electron Microscopy

    ERIC Educational Resources Information Center

    Bogle, Stephanie Nicole

    2009-01-01

    Fluctuation electron microscopy (FEM) has been used to study the nanoscale order in various amorphous materials. The method is explicitly sensitive to 3- and 4-body atomic correlation functions in amorphous materials; this is sufficient to establish the existence of structural order on the nanoscale, even when the radial distribution function…

  16. The Gates, 1979-2005

    ERIC Educational Resources Information Center

    School Arts: The Art Education Magazine for Teachers, 2005

    2005-01-01

    One art critic called it pure Despite the mixed reviews of Christo and Jeanne-Claude's temporary art installation in New York's Central Park, the public reaction to The Gates was largely positive.The Gates consisted of 7,500 orange PVC frames straddling the park's walkways that varied in widths from 5 1/2 feet to 18 feet. Eight-foot-long ripstop…

  17. Amplifying genetic logic gates.

    PubMed

    Bonnet, Jerome; Yin, Peter; Ortiz, Monica E; Subsoontorn, Pakpoom; Endy, Drew

    2013-05-03

    Organisms must process information encoded via developmental and environmental signals to survive and reproduce. Researchers have also engineered synthetic genetic logic to realize simpler, independent control of biological processes. We developed a three-terminal device architecture, termed the transcriptor, that uses bacteriophage serine integrases to control the flow of RNA polymerase along DNA. Integrase-mediated inversion or deletion of DNA encoding transcription terminators or a promoter modulates transcription rates. We realized permanent amplifying AND, NAND, OR, XOR, NOR, and XNOR gates actuated across common control signal ranges and sequential logic supporting autonomous cell-cell communication of DNA encoding distinct logic-gate states. The single-layer digital logic architecture developed here enables engineering of amplifying logic gates to control transcription rates within and across diverse organisms.

  18. Charge separation at nanoscale interfaces: energy-level alignment including two-quasiparticle interactions.

    PubMed

    Li, Huashan; Lin, Zhibin; Lusk, Mark T; Wu, Zhigang

    2014-10-21

    The universal and fundamental criteria for charge separation at interfaces involving nanoscale materials are investigated. In addition to the single-quasiparticle excitation, all the two-quasiparticle effects including exciton binding, Coulomb stabilization, and exciton transfer are considered, which play critical roles on nanoscale interfaces for optoelectronic applications. We propose a scheme allowing adding these two-quasiparticle interactions on top of the single-quasiparticle energy level alignment for determining and illuminating charge separation at nanoscale interfaces. Employing the many-body perturbation theory based on Green's functions, we quantitatively demonstrate that neglecting or simplifying these crucial two-quasiparticle interactions using less accurate methods is likely to predict qualitatively incorrect charge separation behaviors at nanoscale interfaces where quantum confinement dominates.

  19. Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

    NASA Astrophysics Data System (ADS)

    Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

    2015-12-01

    A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.

  20. Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors.

    PubMed

    Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

    2015-12-17

    A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.

  1. A Thermal Diode Based on Nanoscale Thermal Radiation.

    PubMed

    Fiorino, Anthony; Thompson, Dakotah; Zhu, Linxiao; Mittapally, Rohith; Biehs, Svend-Age; Bezencenet, Odile; El-Bondry, Nadia; Bansropun, Shailendra; Ben-Abdallah, Philippe; Meyhofer, Edgar; Reddy, Pramod

    2018-05-23

    In this work we demonstrate thermal rectification at the nanoscale between doped Si and VO 2 surfaces. Specifically, we show that the metal-insulator transition of VO 2 makes it possible to achieve large differences in the heat flow between Si and VO 2 when the direction of the temperature gradient is reversed. We further show that this rectification increases at nanoscale separations, with a maximum rectification coefficient exceeding 50% at ∼140 nm gaps and a temperature difference of 70 K. Our modeling indicates that this high rectification coefficient arises due to broadband enhancement of heat transfer between metallic VO 2 and doped Si surfaces, as compared to narrower-band exchange that occurs when VO 2 is in its insulating state. This work demonstrates the feasibility of accomplishing near-field-based rectification of heat, which is a key component for creating nanoscale radiation-based information processing devices and thermal management approaches.

  2. Exploring Ultimate Water Capillary Evaporation in Nanoscale Conduits.

    PubMed

    Li, Yinxiao; Alibakhshi, Mohammad Amin; Zhao, Yihong; Duan, Chuanhua

    2017-08-09

    Capillary evaporation in nanoscale conduits is an efficient heat/mass transfer strategy that has been widely utilized by both nature and mankind. Despite its broad impact, the ultimate transport limits of capillary evaporation in nanoscale conduits, governed by the evaporation/condensation kinetics at the liquid-vapor interface, have remained poorly understood. Here we report experimental study of the kinetic limits of water capillary evaporation in two dimensional nanochannels using a novel hybrid channel design. Our results show that the kinetic-limited evaporation fluxes break down the limits predicated by the classical Hertz-Knudsen equation by an order of magnitude, reaching values up to 37.5 mm/s with corresponding heat fluxes up to 8500 W/cm 2 . The measured evaporation flux increases with decreasing channel height and relative humidity but decreases as the channel temperature decreases. Our findings have implications for further understanding evaporation at the nanoscale and developing capillary evaporation-based technologies for both energy- and bio-related applications.

  3. System and Method for Scan Range Gating

    NASA Technical Reports Server (NTRS)

    Lindemann, Scott (Inventor); Zuk, David M. (Inventor)

    2017-01-01

    A system for scanning light to define a range gated signal includes a pulsed coherent light source that directs light into the atmosphere, a light gathering instrument that receives the light modified by atmospheric backscatter and transfers the light onto an image plane, a scanner that scans collimated light from the image plane to form a range gated signal from the light modified by atmospheric backscatter, a control circuit that coordinates timing of a scan rate of the scanner and a pulse rate of the pulsed coherent light source so that the range gated signal is formed according to a desired range gate, an optical device onto which an image of the range gated signal is scanned, and an interferometer to which the image of the range gated signal is directed by the optical device. The interferometer is configured to modify the image according to a desired analysis.

  4. Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

    NASA Technical Reports Server (NTRS)

    Woo, D. S.

    1980-01-01

    The double layer metallization technology applied on p type silicon gate CMOS/SOS integrated circuits is described. A smooth metal surface was obtained by using the 2% Si-sputtered Al. More than 10% probe yield was achieved on solar cell controller circuit TCS136 (or MSFC-SC101). Reliability tests were performed on 15 arrays at 150 C. Only three arrays failed during the burn in, and 18 arrays out of 22 functioning arrays maintained the leakage current below 100 milli-A. Analysis indicates that this technology will be a viable process if the metal short circuit problem between the two metals can be reduced.

  5. Restless Tuneup of High-Fidelity Qubit Gates

    NASA Astrophysics Data System (ADS)

    Rol, M. A.; Bultink, C. C.; O'Brien, T. E.; de Jong, S. R.; Theis, L. S.; Fu, X.; Luthi, F.; Vermeulen, R. F. L.; de Sterke, J. C.; Bruno, A.; Deurloo, D.; Schouten, R. N.; Wilhelm, F. K.; DiCarlo, L.

    2017-04-01

    We present a tuneup protocol for qubit gates with tenfold speedup over traditional methods reliant on qubit initialization by energy relaxation. This speedup is achieved by constructing a cost function for Nelder-Mead optimization from real-time correlation of nondemolition measurements interleaving gate operations without pause. Applying the protocol on a transmon qubit achieves 0.999 average Clifford fidelity in one minute, as independently verified using randomized benchmarking and gate-set tomography. The adjustable sensitivity of the cost function allows the detection of fractional changes in the gate error with a nearly constant signal-to-noise ratio. The restless concept demonstrated can be readily extended to the tuneup of two-qubit gates and measurement operations.

  6. Comparison of LVEF assessed by 2D echocardiography, gated blood pool SPECT, 99mTc tetrofosmin gated SPECT, and 18F-FDG gated PET with ERNV in patients with CAD and severe LV dysfunction.

    PubMed

    Raja, Senthil; Mittal, Bhagwant R; Santhosh, Sampath; Bhattacharya, Anish; Rohit, Manoj K

    2014-11-01

    Left ventricular ejection fraction (LVEF) is the single most important predictor of prognosis in patients with coronary artery disease (CAD) and left ventricular (LV) dysfunction. Equilibrium radionuclide ventriculography (ERNV) is considered the most reliable technique for assessing LVEF. Most of these patients undergo two dimensional (2D) echocardiography and myocardial viability study using gated myocardial perfusion imaging (MPI) or gated F-fluorodeoxyglucose (F-FDG) PET. However, the accuracy of LVEF assessed by these methods is not clear. This study has been designed to assess the correlation and agreement between the LVEF measured by 2D echocardiography, gated blood pool single photon emission computed tomography (SPECT), Tc tetrofosmin gated SPECT, and F-FDG gated PET with ERNV in CAD patients with severe LV dysfunction. Patients with CAD and severe LV dysfunction [ejection fraction (EF) <35 assessed by 2D echocardiography] were prospectively included in the study. These patients underwent ERNV along with gated blood pool SPECT, Tc tetrofosmin gated SPECT, and F-FDG gated PET as per the standard protocol for myocardial viability assessment and LVEF calculation. Spearman's coefficient of correlation (r) was calculated for the different sets of values with significance level kept at a P-value less than 0.05. Bland-Altman plots were inspected to visually assess the between-agreement measurements from different methods. Forty-one patients were prospectively included. LVEF calculated by various radionuclide methods showed good correlation with ERNV as follows: gated blood pool SPECT, r=0.92; MPI gated SPECT, r=0.85; and F-FDG gated PET, r=0.76. However, the correlation between 2D echocardiography and ERNV was poor (r=0.520). The Bland-Altman plot for LVEF measured by all radionuclide methods showed good agreement with ERNV. However, agreement between 2D echocardiography and ERNV is poor, as most of the values in this plot gave a negative difference for low EF

  7. Implementation of cascade logic gates and majority logic gate on a simple and universal molecular platform.

    PubMed

    Gao, Jinting; Liu, Yaqing; Lin, Xiaodong; Deng, Jiankang; Yin, Jinjin; Wang, Shuo

    2017-10-25

    Wiring a series of simple logic gates to process complex data is significantly important and a large challenge for untraditional molecular computing systems. The programmable property of DNA endows its powerful application in molecular computing. In our investigation, it was found that DNA exhibits excellent peroxidase-like activity in a colorimetric system of TMB/H 2 O 2 /Hemin (TMB, 3,3', 5,5'-Tetramethylbenzidine) in the presence of K + and Cu 2+ , which is significantly inhibited by the addition of an antioxidant. According to the modulated catalytic activity of this DNA-based catalyst, three cascade logic gates including AND-OR-INH (INHIBIT), AND-INH and OR-INH were successfully constructed. Interestingly, by only modulating the concentration of Cu 2+ , a majority logic gate with a single-vote veto function was realized following the same threshold value as that of the cascade logic gates. The strategy is quite straightforward and versatile and provides an instructive method for constructing multiple logic gates on a simple platform to implement complex molecular computing.

  8. Light-effect transistor (LET) with multiple independent gating controls for optical logic gates and optical amplification

    NASA Astrophysics Data System (ADS)

    Marmon, Jason; Rai, Satish; Wang, Kai; Zhou, Weilie; Zhang, Yong

    2016-03-01

    Modern electronics are developing electronic-optical integrated circuits, while their electronic backbone, e.g. field-effect transistors (FETs), remains the same. However, further FET down scaling is facing physical and technical challenges. A light-effect transistor (LET) offers electronic-optical hybridization at the component level, which can continue Moore’s law to quantum region without requiring a FET’s fabrication complexity, e.g. physical gate and doping, by employing optical gating and photoconductivity. Multiple independent gates are therefore readily realized to achieve unique functionalities without increasing chip space. Here we report LET device characteristics and novel digital and analog applications, such as optical logic gates and optical amplification. Prototype CdSe-nanowire-based LETs show output and transfer characteristics resembling advanced FETs, e.g. on/off ratios up to ~1.0x106 with a source-drain voltage of ~1.43 V, gate-power of ~260 nW, and subthreshold swing of ~0.3 nW/decade (excluding losses). Our work offers new electronic-optical integration strategies and electronic and optical computing approaches.

  9. Variations of Contact Resistance in Dual-Gated Monolayer Molybdenum Disulfide Transistors Depending on Gate Bias Selection

    NASA Astrophysics Data System (ADS)

    Tran, P. X.

    2017-06-01

    Monolayer molybdenum disulfide (MoS2) is considered an alternative two-dimensional material for high performance ultra-thin field-effect transistors. MoS2 is a triple atomic layer with a direct 1.8 eV bandgap. Bulk MoS2 has an additional indirect bandgap of 1.2 eV, which leads to high current on/off ratio around 108. Flakes of MoS2 can be obtained by mechanical exfoliation or grown by chemical vapor deposition. Intrinsic cut-off frequency of multilayer MoS2 transistor has reached 42 GHz. Chemical doping of MoS2 is challenging and results in reduction of contact resistance. This paper focuses on modeling of dual-gated monolayer MoS2 transistors with effective mobility of carriers varying from 0.6 cm2/V s to 750 cm2/V s. In agreement with experimental data, the model demonstrates that in back-gate bias devices, the contact resistance decreases almost exponentially with increasing gate bias, whereas in top-gate bias devices, the contact resistance stays invariant when varying gate bias.

  10. Mapping photovoltaic performance with nanoscale resolution

    DOE PAGES

    Kutes, Yasemin; Aguirre, Brandon A.; Bosse, James L.; ...

    2015-10-16

    Photo-conductive AFM spectroscopy (‘pcAFMs’) is proposed as a high-resolution approach for investigating nanostructured photovoltaics, uniquely providing nanoscale maps of photovoltaic (PV) performance parameters such as the short circuit current, open circuit voltage, maximum power, or fill factor. The method is demonstrated with a stack of 21 images acquired during in situ illumination of micropatterned polycrystalline CdTe/CdS, providing more than 42,000 I/V curves spatially separated by ~5 nm. For these CdTe/CdS microcells, the calculated photoconduction ranges from 0 to 700 picoSiemens (pS) upon illumination with ~1.6 suns, depending on location and biasing conditions. Mean short circuit currents of 2 pA, maximummore » powers of 0.5 pW, and fill factors of 30% are determined. The mean voltage at which the detected photocurrent is zero is determined to be 0.7 V. Significantly, enhancements and reductions in these more commonly macroscopic PV performance metrics are observed to correlate with certain grains and grain boundaries, and are confirmed to be independent of topography. Furthermore, these results demonstrate the benefits of nanoscale resolved PV functional measurements, reiterate the importance of microstructural control down to the nanoscale for 'PV devices, and provide a widely applicable new approach for directly investigating PV materials.« less

  11. A Look Inside Argonne's Center for Nanoscale Materials

    ScienceCinema

    Divan, Ralu; Rosenthal, Dan; Rose, Volker; Wai Hla

    2018-05-23

    At a very small, or "nano" scale, materials behave differently. The study of nanomaterials is much more than miniaturization - scientists are discovering how changes in size change a material's properties. From sunscreen to computer memory, the applications of nanoscale materials research are all around us. Researchers at Argonne's Center for Nanoscale Materials are creating new materials, methods and technologies to address some of the world's greatest challenges in energy security, lightweight but durable materials, high-efficiency lighting, information storage, environmental stewardship and advanced medical devices.

  12. Geometric rectification for nanoscale vibrational energy harvesting

    NASA Astrophysics Data System (ADS)

    Bustos-Marún, Raúl A.

    2018-02-01

    In this work, we present a mechanism that, based on quantum-mechanical principles, allows one to recover kinetic energy at the nanoscale. Our premise is that very small mechanical excitations, such as those arising from sound waves propagating through a nanoscale system or similar phenomena, can be quite generally converted into useful electrical work by applying the same principles behind conventional adiabatic quantum pumping. The proposal is potentially useful for nanoscale vibrational energy harvesting where it can have several advantages. The most important one is that it avoids the use of classical rectification mechanisms as it is based on what we call geometric rectification. We show that this geometric rectification results from applying appropriate but quite general initial conditions to damped harmonic systems coupled to electronic reservoirs. We analyze an analytically solvable example consisting of a wire suspended over permanent charges where we find the condition for maximizing the pumped charge. We also studied the effects of coupling the system to a capacitor including the effect of current-induced forces and analyzing the steady-state voltage of operation. Finally, we show how quantum effects can be used to boost the performance of the proposed device.

  13. Cognitive mechanisms associated with auditory sensory gating

    PubMed Central

    Jones, L.A.; Hills, P.J.; Dick, K.M.; Jones, S.P.; Bright, P.

    2016-01-01

    Sensory gating is a neurophysiological measure of inhibition that is characterised by a reduction in the P50 event-related potential to a repeated identical stimulus. The objective of this work was to determine the cognitive mechanisms that relate to the neurological phenomenon of auditory sensory gating. Sixty participants underwent a battery of 10 cognitive tasks, including qualitatively different measures of attentional inhibition, working memory, and fluid intelligence. Participants additionally completed a paired-stimulus paradigm as a measure of auditory sensory gating. A correlational analysis revealed that several tasks correlated significantly with sensory gating. However once fluid intelligence and working memory were accounted for, only a measure of latent inhibition and accuracy scores on the continuous performance task showed significant sensitivity to sensory gating. We conclude that sensory gating reflects the identification of goal-irrelevant information at the encoding (input) stage and the subsequent ability to selectively attend to goal-relevant information based on that previous identification. PMID:26716891

  14. Experimental superposition of orders of quantum gates

    PubMed Central

    Procopio, Lorenzo M.; Moqanaki, Amir; Araújo, Mateus; Costa, Fabio; Alonso Calafell, Irati; Dowd, Emma G.; Hamel, Deny R.; Rozema, Lee A.; Brukner, Časlav; Walther, Philip

    2015-01-01

    Quantum computers achieve a speed-up by placing quantum bits (qubits) in superpositions of different states. However, it has recently been appreciated that quantum mechanics also allows one to ‘superimpose different operations'. Furthermore, it has been shown that using a qubit to coherently control the gate order allows one to accomplish a task—determining if two gates commute or anti-commute—with fewer gate uses than any known quantum algorithm. Here we experimentally demonstrate this advantage, in a photonic context, using a second qubit to control the order in which two gates are applied to a first qubit. We create the required superposition of gate orders by using additional degrees of freedom of the photons encoding our qubits. The new resource we exploit can be interpreted as a superposition of causal orders, and could allow quantum algorithms to be implemented with an efficiency unlikely to be achieved on a fixed-gate-order quantum computer. PMID:26250107

  15. G4-FETs as Universal and Programmable Logic Gates

    NASA Technical Reports Server (NTRS)

    Johnson, Travis; Fijany, Amir; Mojarradi, Mohammad; Vatan, Farrokh; Toomarian, Nikzad; Kolawa, Elizabeth; Cristoloveanu, Sorin; Blalock, Benjamin

    2007-01-01

    An analysis of a patented generic silicon- on-insulator (SOI) electronic device called a G4-FET has revealed that the device could be designed to function as a universal and programmable logic gate. The universality and programmability could be exploited to design logic circuits containing fewer discrete components than are required for conventional transistor-based circuits performing the same logic functions. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET) superimposed in a single silicon island and can therefore be regarded as two transistors sharing the same body. A G4-FET can also be regarded as a single transistor having four gates: two side junction-based gates, a top MOS gate, and a back gate activated by biasing of the SOI substrate. Each of these gates can be used to control the conduction characteristics of the transistor; this possibility creates new options for designing analog, radio-frequency, mixed-signal, and digital circuitry. With proper choice of the specific dimensions for the gates, channels, and ancillary features of the generic G4-FET, the device could be made to function as a three-input, one-output logic gate. As illustrated by the truth table in the top part of the figure, the behavior of this logic gate would be the inverse (the NOT) of that of a majority gate. In other words, the device would function as a NOT-majority gate. By simply adding an inverter, one could obtain a majority gate. In contrast, to construct a majority gate in conventional complementary metal oxide/semiconductor (CMOS) circuitry, one would need four three-input AND gates and a four-input OR gate, altogether containing 32 transistors.

  16. Investigation of field induced trapping on floating gates

    NASA Technical Reports Server (NTRS)

    Gosney, W. M.

    1975-01-01

    The development of a technology for building electrically alterable read only memories (EAROMs) or reprogrammable read only memories (RPROMs) using a single level metal gate p channel MOS process with all conventional processing steps is outlined. Nonvolatile storage of data is achieved by the use of charged floating gate electrodes. The floating gates are charged by avalanche injection of hot electrodes through gate oxide, and discharged by avalanche injection of hot holes through gate oxide. Three extra diffusion and patterning steps are all that is required to convert a standard p channel MOS process into a nonvolatile memory process. For identification, this nonvolatile memory technology was given the descriptive acronym DIFMOS which stands for Dual Injector, Floating gate MOS.

  17. Nanoscale chirality in metal and semiconductor nanoparticles

    PubMed Central

    Thomas, K. George

    2016-01-01

    The field of chirality has recently seen a rejuvenation due to the observation of chirality in inorganic nanomaterials. The advancements in understanding the origin of nanoscale chirality and the potential applications of chiroptical nanomaterials in the areas of optics, catalysis and biosensing, among others, have opened up new avenues toward new concepts and design of novel materials. In this article, we review the concept of nanoscale chirality in metal nanoclusters and semiconductor quantum dots, then focus on recent experimental and theoretical advances in chiral metal nanoparticles and plasmonic chirality. Selected examples of potential applications and an outlook on the research on chiral nanomaterials are additionally provided. PMID:27752651

  18. Nanoscale chirality in metal and semiconductor nanoparticles.

    PubMed

    Kumar, Jatish; Thomas, K George; Liz-Marzán, Luis M

    2016-10-18

    The field of chirality has recently seen a rejuvenation due to the observation of chirality in inorganic nanomaterials. The advancements in understanding the origin of nanoscale chirality and the potential applications of chiroptical nanomaterials in the areas of optics, catalysis and biosensing, among others, have opened up new avenues toward new concepts and design of novel materials. In this article, we review the concept of nanoscale chirality in metal nanoclusters and semiconductor quantum dots, then focus on recent experimental and theoretical advances in chiral metal nanoparticles and plasmonic chirality. Selected examples of potential applications and an outlook on the research on chiral nanomaterials are additionally provided.

  19. Lower-upper-threshold correlation for underwater range-gated imaging self-adaptive enhancement.

    PubMed

    Sun, Liang; Wang, Xinwei; Liu, Xiaoquan; Ren, Pengdao; Lei, Pingshun; He, Jun; Fan, Songtao; Zhou, Yan; Liu, Yuliang

    2016-10-10

    In underwater range-gated imaging (URGI), enhancement of low-brightness and low-contrast images is critical for human observation. Traditional histogram equalizations over-enhance images, with the result of details being lost. To compress over-enhancement, a lower-upper-threshold correlation method is proposed for underwater range-gated imaging self-adaptive enhancement based on double-plateau histogram equalization. The lower threshold determines image details and compresses over-enhancement. It is correlated with the upper threshold. First, the upper threshold is updated by searching for the local maximum in real time, and then the lower threshold is calculated by the upper threshold and the number of nonzero units selected from a filtered histogram. With this method, the backgrounds of underwater images are constrained with enhanced details. Finally, the proof experiments are performed. Peak signal-to-noise-ratio, variance, contrast, and human visual properties are used to evaluate the objective quality of the global and regions of interest images. The evaluation results demonstrate that the proposed method adaptively selects the proper upper and lower thresholds under different conditions. The proposed method contributes to URGI with effective image enhancement for human eyes.

  20. Manufacturing at the Nanoscale. Report of the National Nanotechnology Initiative Workshops, 2002-2004

    DTIC Science & Technology

    2007-01-01

    positioning and assembling? • Do nanoscale properties remain once the nanostructures are integrated up to the microscale? • How do we measure...viii Manufacturing at the Nanoscale 1 1. VISION Employing the novel properties and processes that are associated with the nanoscale—in the...Theory, modeling, and simulation software are being developed to investigate nanoscale material properties and synthesis of macromolecular systems with

  1. Reduction of Thermal Conductivity by Nanoscale 3D Phononic Crystal

    PubMed Central

    Yang, Lina; Yang, Nuo; Li, Baowen

    2013-01-01

    We studied how the period length and the mass ratio affect the thermal conductivity of isotopic nanoscale three-dimensional (3D) phononic crystal of Si. Simulation results by equilibrium molecular dynamics show isotopic nanoscale 3D phononic crystals can significantly reduce the thermal conductivity of bulk Si at high temperature (1000 K), which leads to a larger ZT than unity. The thermal conductivity decreases as the period length and mass ratio increases. The phonon dispersion curves show an obvious decrease of group velocities in 3D phononic crystals. The phonon's localization and band gap is also clearly observed in spectra of normalized inverse participation ratio in nanoscale 3D phononic crystal. PMID:23378898

  2. Nanoscale thermal transport. II. 2003-2012

    NASA Astrophysics Data System (ADS)

    Cahill, David G.; Braun, Paul V.; Chen, Gang; Clarke, David R.; Fan, Shanhui; Goodson, Kenneth E.; Keblinski, Pawel; King, William P.; Mahan, Gerald D.; Majumdar, Arun; Maris, Humphrey J.; Phillpot, Simon R.; Pop, Eric; Shi, Li

    2014-03-01

    A diverse spectrum of technology drivers such as improved thermal barriers, higher efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic recording, thermal management of nanoscale electronics, and nanoparticles for thermal medical therapies are motivating studies of the applied physics of thermal transport at the nanoscale. This review emphasizes developments in experiment, theory, and computation in the past ten years and summarizes the present status of the field. Interfaces become increasingly important on small length scales. Research during the past decade has extended studies of interfaces between simple metals and inorganic crystals to interfaces with molecular materials and liquids with systematic control of interface chemistry and physics. At separations on the order of ˜ 1 nm , the science of radiative transport through nanoscale gaps overlaps with thermal conduction by the coupling of electronic and vibrational excitations across weakly bonded or rough interfaces between materials. Major advances in the physics of phonons include first principles calculation of the phonon lifetimes of simple crystals and application of the predicted scattering rates in parameter-free calculations of the thermal conductivity. Progress in the control of thermal transport at the nanoscale is critical to continued advances in the density of information that can be stored in phase change memory devices and new generations of magnetic storage that will use highly localized heat sources to reduce the coercivity of magnetic media. Ultralow thermal conductivity—thermal conductivity below the conventionally predicted minimum thermal conductivity—has been observed in nanolaminates and disordered crystals with strong anisotropy. Advances in metrology by time-domain thermoreflectance have made measurements of the thermal conductivity of a thin layer with micron-scale spatial resolution relatively routine. Scanning thermal microscopy and thermal

  3. Methodology for Analysis, Modeling and Simulation of Airport Gate-waiting Delays

    NASA Astrophysics Data System (ADS)

    Wang, Jianfeng

    This dissertation presents methodologies to estimate gate-waiting delays from historical data, to identify gate-waiting-delay functional causes in major U.S. airports, and to evaluate the impact of gate operation disruptions and mitigation strategies on gate-waiting delay. Airport gates are a resource of congestion in the air transportation system. When an arriving flight cannot pull into its gate, the delay it experiences is called gate-waiting delay. Some possible reasons for gate-waiting delay are: the gate is occupied, gate staff or equipment is unavailable, the weather prevents the use of the gate (e.g. lightning), or the airline has a preferred gate assignment. Gate-waiting delays potentially stay with the aircraft throughout the day (unless they are absorbed), adding costs to passengers and the airlines. As the volume of flights increases, ensuring that airport gates do not become a choke point of the system is critical. The first part of the dissertation presents a methodology for estimating gate-waiting delays based on historical, publicly available sources. Analysis of gate-waiting delays at major U.S. airports in the summer of 2007 identifies the following. (i) Gate-waiting delay is not a significant problem on majority of days; however, the worst delay days (e.g. 4% of the days at LGA) are extreme outliers. (ii) The Atlanta International Airport (ATL), the John F. Kennedy International Airport (JFK), the Dallas/Fort Worth International Airport (DFW) and the Philadelphia International Airport (PHL) experience the highest gate-waiting delays among major U.S. airports. (iii) There is a significant gate-waiting-delay difference between airlines due to a disproportional gate allocation. (iv) Gate-waiting delay is sensitive to time of a day and schedule peaks. According to basic principles of queueing theory, gate-waiting delay can be attributed to over-scheduling, higher-than-scheduled arrival rate, longer-than-scheduled gate-occupancy time, and reduced gate

  4. 30 CFR 56.19100 - Shaft landing gates.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Shaft landing gates. 56.19100 Section 56.19100 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE... § 56.19100 Shaft landing gates. Shaft landings shall be equipped with substantial safety gates so...

  5. 30 CFR 56.19100 - Shaft landing gates.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Shaft landing gates. 56.19100 Section 56.19100 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE... § 56.19100 Shaft landing gates. Shaft landings shall be equipped with substantial safety gates so...

  6. Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

    NASA Astrophysics Data System (ADS)

    An, Yanbin; Shekhawat, Aniruddh; Behnam, Ashkan; Pop, Eric; Ural, Ant

    2016-11-01

    Metal-oxide-semiconductor (MOS) devices with graphene as the metal gate electrode, silicon dioxide with thicknesses ranging from 5 to 20 nm as the dielectric, and p-type silicon as the semiconductor are fabricated and characterized. It is found that Fowler-Nordheim (F-N) tunneling dominates the gate tunneling current in these devices for oxide thicknesses of 10 nm and larger, whereas for devices with 5 nm oxide, direct tunneling starts to play a role in determining the total gate current. Furthermore, the temperature dependences of the F-N tunneling current for the 10 nm devices are characterized in the temperature range 77-300 K. The F-N coefficients and the effective tunneling barrier height are extracted as a function of temperature. It is found that the effective barrier height decreases with increasing temperature, which is in agreement with the results previously reported for conventional MOS devices with polysilicon or metal gate electrodes. In addition, high frequency capacitance-voltage measurements of these MOS devices are performed, which depict a local capacitance minimum under accumulation for thin oxides. By analyzing the data using numerical calculations based on the modified density of states of graphene in the presence of charged impurities, it is shown that this local minimum is due to the contribution of the quantum capacitance of graphene. Finally, the workfunction of the graphene gate electrode is extracted by determining the flat-band voltage as a function of oxide thickness. These results show that graphene is a promising candidate as the gate electrode in metal-oxide-semiconductor devices.

  7. Bubble gate for in-plane flow control.

    PubMed

    Oskooei, Ali; Abolhasani, Milad; Günther, Axel

    2013-07-07

    We introduce a miniature gate valve as a readily implementable strategy for actively controlling the flow of liquids on-chip, within a footprint of less than one square millimetre. Bubble gates provide for simple, consistent and scalable control of liquid flow in microchannel networks, are compatible with different bulk microfabrication processes and substrate materials, and require neither electrodes nor moving parts. A bubble gate consists of two microchannel sections: a liquid-filled channel and a gas channel that intercepts the liquid channel to form a T-junction. The open or closed state of a bubble gate is determined by selecting between two distinct gas pressure levels: the lower level corresponds to the "open" state while the higher level corresponds to the "closed" state. During closure, a gas bubble penetrates from the gas channel into the liquid, flanked by a column of equidistantly spaced micropillars on each side, until the flow of liquid is completely obstructed. We fabricated bubble gates using single-layer soft lithographic and bulk silicon micromachining procedures and evaluated their performance with a combination of theory and experimentation. We assessed the dynamic behaviour during more than 300 open-and-close cycles and report the operating pressure envelope for different bubble gate configurations and for the working fluids: de-ionized water, ethanol and a biological buffer. We obtained excellent agreement between the experimentally determined bubble gate operational envelope and a theoretical prediction based on static wetting behaviour. We report case studies that serve to illustrate the utility of bubble gates for liquid sampling in single and multi-layer microfluidic devices. Scalability of our strategy was demonstrated by simultaneously addressing 128 bubble gates.

  8. Nanoscale NMR spectroscopy and imaging of multiple nuclear species.

    PubMed

    DeVience, Stephen J; Pham, Linh M; Lovchinsky, Igor; Sushkov, Alexander O; Bar-Gill, Nir; Belthangady, Chinmay; Casola, Francesco; Corbett, Madeleine; Zhang, Huiliang; Lukin, Mikhail; Park, Hongkun; Yacoby, Amir; Walsworth, Ronald L

    2015-02-01

    Nuclear magnetic resonance (NMR) spectroscopy and magnetic resonance imaging (MRI) provide non-invasive information about multiple nuclear species in bulk matter, with wide-ranging applications from basic physics and chemistry to biomedical imaging. However, the spatial resolution of conventional NMR and MRI is limited to several micrometres even at large magnetic fields (>1 T), which is inadequate for many frontier scientific applications such as single-molecule NMR spectroscopy and in vivo MRI of individual biological cells. A promising approach for nanoscale NMR and MRI exploits optical measurements of nitrogen-vacancy (NV) colour centres in diamond, which provide a combination of magnetic field sensitivity and nanoscale spatial resolution unmatched by any existing technology, while operating under ambient conditions in a robust, solid-state system. Recently, single, shallow NV centres were used to demonstrate NMR of nanoscale ensembles of proton spins, consisting of a statistical polarization equivalent to ∼100-1,000 spins in uniform samples covering the surface of a bulk diamond chip. Here, we realize nanoscale NMR spectroscopy and MRI of multiple nuclear species ((1)H, (19)F, (31)P) in non-uniform (spatially structured) samples under ambient conditions and at moderate magnetic fields (∼20 mT) using two complementary sensor modalities.

  9. Voltage-dependent gating and gating charge measurements in the Kv1.2 potassium channel

    PubMed Central

    Ishida, Itzel G.; Rangel-Yescas, Gisela E.; Carrasco-Zanini, Julia

    2015-01-01

    Much has been learned about the voltage sensors of ion channels since the x-ray structure of the mammalian voltage-gated potassium channel Kv1.2 was published in 2005. High resolution structural data of a Kv channel enabled the structural interpretation of numerous electrophysiological findings collected in various ion channels, most notably Shaker, and permitted the development of meticulous computational simulations of the activation mechanism. The fundamental premise for the structural interpretation of functional measurements from Shaker is that this channel and Kv1.2 have the same characteristics, such that correlation of data from both channels would be a trivial task. We tested these assumptions by measuring Kv1.2 voltage-dependent gating and charge per channel. We found that the Kv1.2 gating charge is near 10 elementary charges (eo), ∼25% less than the well-established 13–14 eo in Shaker. Next, we neutralized positive residues in the Kv1.2 S4 transmembrane segment to investigate the cause of the reduction of the gating charge and found that, whereas replacing R1 with glutamine decreased voltage sensitivity to ∼50% of the wild-type channel value, mutation of the subsequent arginines had a much smaller effect. These data are in marked contrast to the effects of charge neutralization in Shaker, where removal of the first four basic residues reduces the gating charge by roughly the same amount. In light of these differences, we propose that the voltage-sensing domains (VSDs) of Kv1.2 and Shaker might undergo the same physical movement, but the septum that separates the aqueous crevices in the VSD of Kv1.2 might be thicker than Shaker’s, accounting for the smaller Kv1.2 gating charge. PMID:25779871

  10. Andreev molecules in semiconductor nanowire double quantum dots.

    PubMed

    Su, Zhaoen; Tacla, Alexandre B; Hocevar, Moïra; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P A M; Daley, Andrew J; Pekker, David; Frolov, Sergey M

    2017-09-19

    Chains of quantum dots coupled to superconductors are promising for the realization of the Kitaev model of a topological superconductor. While individual superconducting quantum dots have been explored, control of longer chains requires understanding of interdot coupling. Here, double quantum dots are defined by gate voltages in indium antimonide nanowires. High transparency superconducting niobium titanium nitride contacts are made to each of the dots in order to induce superconductivity, as well as probe electron transport. Andreev bound states induced on each of dots hybridize to define Andreev molecular states. The evolution of these states is studied as a function of charge parity on the dots, and in magnetic field. The experiments are found in agreement with a numerical model.Quantum dots in a nanowire are one possible approach to creating a solid-state quantum simulator. Here, the authors demonstrate the coupling of electronic states in a double quantum dot to form Andreev molecule states; a potential building block for longer chains suitable for quantum simulation.

  11. 30 CFR 57.19100 - Shaft landing gates.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Shaft landing gates. 57.19100 Section 57.19100 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE... Shafts § 57.19100 Shaft landing gates. Shaft landings shall be equipped with substantial safety gates so...

  12. 30 CFR 57.19100 - Shaft landing gates.

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 30 Mineral Resources 1 2011-07-01 2011-07-01 false Shaft landing gates. 57.19100 Section 57.19100 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION, DEPARTMENT OF LABOR METAL AND NONMETAL MINE... Shafts § 57.19100 Shaft landing gates. Shaft landings shall be equipped with substantial safety gates so...

  13. Bottom-up nanoconstruction by the welding of individual metallic nanoobjects using nanoscale solder.

    PubMed

    Peng, Yong; Cullis, Tony; Inkson, Beverley

    2009-01-01

    We report that individual metallic nanowires and nanoobjects can be assembled and welded together into complex nanostructures and conductive circuits by a new nanoscale electrical welding technique using nanovolumes of metal solder. At the weld sites, nanoscale volumes of a chosen metal are deposited using a sacrificial nanowire, which ensures that the nanoobjects to be bonded retain their structural integrity. We demonstrate by welding both similar and dissimilar materials that the use of nanoscale solder is clean, controllable, and reliable and ensures both mechanically strong and electrically conductive contacts. Nanoscale weld resistances of just 20Omega are achieved by using Sn solder. Precise engineering of nanowelds by this technique, including the chemical flexibility of the nanowire solder, and high spatial resolution of the nanowelding method, should result in research applications including fabrication of nanosensors and nanoelectronics constructed from a small number of nanoobjects, and repair of interconnects and failed nanoscale electronics.

  14. Nanoscale volcanoes: accretion of matter at ion-sculpted nanopores.

    PubMed

    Mitsui, Toshiyuki; Stein, Derek; Kim, Young-Rok; Hoogerheide, David; Golovchenko, J A

    2006-01-27

    We demonstrate the formation of nanoscale volcano-like structures induced by ion-beam irradiation of nanoscale pores in freestanding silicon nitride membranes. Accreted matter is delivered to the volcanoes from micrometer distances along the surface. Volcano formation accompanies nanopore shrinking and depends on geometrical factors and the presence of a conducting layer on the membrane's back surface. We argue that surface electric fields play an important role in accounting for the experimental observations.

  15. Enhanced reactivity of nanoscale iron particles through a vacuum annealing process

    NASA Astrophysics Data System (ADS)

    Riba, Olga; Barnes, Robert J.; Scott, Thomas B.; Gardner, Murray N.; Jackman, Simon A.; Thompson, Ian P.

    2011-10-01

    A reactivity study was undertaken to compare and assess the rate of dechlorination of chlorinated aliphatic hydrocarbons (CAHs) by annealed and non-annealed nanoscale iron particles. The current study aims to resolve the uncertainties in recently published work studying the effect of the annealing process on the reduction capability of nanoscale Fe particles. Comparison of the normalized rate constants (m2/h/L) obtained for dechlorination reactions of trichloroethene (TCE) and cis-1,2-dichloroethene (cis-1,2-DCE) indicated that annealing nanoscale Fe particles increases their reactivity 30-fold. An electron transfer reaction mechanism for both types of nanoscale particles was found to be responsible for CAH dechlorination, rather than a reduction reaction by activated H2 on the particle surface (i.e., hydrogenation, hydrogenolysis). Surface analysis of the particulate material using X-ray diffraction (XRD) and transmission electron microscopy (TEM) together with surface area measurement by Brunauer, Emmett, Teller (BET) indicate that the vacuum annealing process decreases the surface area and increases crystallinity. BET surface area analysis recorded a decrease in nanoscale Fe particle surface area from 19.0 to 4.8 m2/g and crystallite dimensions inside the particle increased from 8.7 to 18.2 nm as a result of annealing.

  16. A Cu2+-selective fluorescent chemosensor based on BODIPY with two pyridine ligands and logic gate

    NASA Astrophysics Data System (ADS)

    Huang, Liuqian; Zhang, Jing; Yu, Xiaoxiu; Ma, Yifan; Huang, Tianjiao; Shen, Xi; Qiu, Huayu; He, Xingxing; Yin, Shouchun

    2015-06-01

    A novel near-infrared fluorescent chemosensor based on BODIPY (Py-1) has been synthesized and characterized. Py-1 displays high selectivity and sensitivity for sensing Cu2+ over other metal ions in acetonitrile. Upon addition of Cu2+ ions, the maximum absorption band of Py-1 in CH3CN displays a red shift from 603 to 608 nm, which results in a visual color change from pink to blue. When Py-1 is excited at 600 nm in the presence of Cu2+, the fluorescent emission intensity of Py-1 at 617 nm is quenched over 86%. Notably, the complex of Py-1-Cu2+ can be restored with the introduction of EDTA or S2-. Consequently, an IMPLICATION logic gate at molecular level operating in fluorescence mode with Cu2+ and S2- as chemical inputs can be constructed. Finally, based on the reversible and reproducible system, a nanoscale sequential memory unit displaying "Writing-Reading-Erasing-Reading" functions can be integrated.

  17. A two-qubit logic gate in silicon.

    PubMed

    Veldhorst, M; Yang, C H; Hwang, J C C; Huang, W; Dehollain, J P; Muhonen, J T; Simmons, S; Laucht, A; Hudson, F E; Itoh, K M; Morello, A; Dzurak, A S

    2015-10-15

    Quantum computation requires qubits that can be coupled in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates. Many physical realizations of qubits exist, including single photons, trapped ions, superconducting circuits, single defects or atoms in diamond and silicon, and semiconductor quantum dots, with single-qubit fidelities that exceed the stringent thresholds required for fault-tolerant quantum computing. Despite this, high-fidelity two-qubit gates in the solid state that can be manufactured using standard lithographic techniques have so far been limited to superconducting qubits, owing to the difficulties of coupling qubits and dephasing in semiconductor systems. Here we present a two-qubit logic gate, which uses single spins in isotopically enriched silicon and is realized by performing single- and two-qubit operations in a quantum dot system using the exchange interaction, as envisaged in the Loss-DiVincenzo proposal. We realize CNOT gates via controlled-phase operations combined with single-qubit operations. Direct gate-voltage control provides single-qubit addressability, together with a switchable exchange interaction that is used in the two-qubit controlled-phase gate. By independently reading out both qubits, we measure clear anticorrelations in the two-spin probabilities of the CNOT gate.

  18. Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

    DOE PAGES

    Xu, Yang; Miotkowski, Ireneusz; Chen, Yong P.

    2016-05-04

    Topological insulators are a novel class of quantum matter with a gapped insulating bulk, yet gapless spin-helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe 2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conductance quantum at themore » double Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction, respectively. As a result, such a system paves the way to explore rich physics, ranging from topological magnetoelectric effects to exciton condensation.« less

  19. Analysis of high-k spacer on symmetric underlap DG-MOSFET with Gate Stack architecture

    NASA Astrophysics Data System (ADS)

    Das, Rahul; Chakraborty, Shramana; Dasgupta, Arpan; Dutta, Arka; Kundu, Atanu; Sarkar, Chandan K.

    2016-09-01

    This paper shows the systematic study of underlap double gate (U-DG) NMOSFETs with Gate Stack (GS) under the influence of high-k spacers. In highly scaled devices, underlap is used at the Source and Drain side so as to reduce the short channel effects (SCE's), however, it significantly reduces the on current due to the increased channel resistance. To overcome these drawbacks, the use of high-k spacers is projected as one of the remedies. In this paper, the analog performance of the devices is studied on the basis of parameters like transconductance (gm), transconductance generation factor (gm/Id) and intrinsic gain (gmro). The RF performance is analyzed on the merits of intrinsic capacitance (Cgd, Cgs), resistance (Rgd, Rgs), transport delay (τm), inductance (Lsd), cutoff frequency (fT), and the maximum frequency of oscillation (fmax). The circuit performance of the devices are studied by implementing the device as the driver MOSFET in a Single Stage Common Source Amplifier. The Gain Bandwidth Product (GBW) has been analyzed from the frequency response of the circuit.

  20. Gate sequence for continuous variable one-way quantum computation

    PubMed Central

    Su, Xiaolong; Hao, Shuhong; Deng, Xiaowei; Ma, Lingyu; Wang, Meihong; Jia, Xiaojun; Xie, Changde; Peng, Kunchi

    2013-01-01

    Measurement-based one-way quantum computation using cluster states as resources provides an efficient model to perform computation and information processing of quantum codes. Arbitrary Gaussian quantum computation can be implemented sufficiently by long single-mode and two-mode gate sequences. However, continuous variable gate sequences have not been realized so far due to an absence of cluster states larger than four submodes. Here we present the first continuous variable gate sequence consisting of a single-mode squeezing gate and a two-mode controlled-phase gate based on a six-mode cluster state. The quantum property of this gate sequence is confirmed by the fidelities and the quantum entanglement of two output modes, which depend on both the squeezing and controlled-phase gates. The experiment demonstrates the feasibility of implementing Gaussian quantum computation by means of accessible gate sequences.