Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics.

PubMed

Xie, Ling-Hai; Yang, Su-Hui; Lin, Jin-Yi; Yi, Ming-Dong; Huang, Wei

2013-10-13

Nanotechnology not only opens up the realm of nanoelectronics and nanophotonics, but also upgrades organic thin-film electronics and optoelectronics. In this review, we introduce polymer semiconductors and plastic electronics briefly, followed by various top-down and bottom-up nano approaches to organic electronics. Subsequently, we highlight the progress in polyfluorene-based nanoparticles and nanowires (nanofibres), their tunable optoelectronic properties as well as their applications in polymer light-emitting devices, solar cells, field-effect transistors, photodetectors, lasers, optical waveguides and others. Finally, an outlook is given with regard to four-element complex devices via organic nanotechnology and molecular manufacturing that will spread to areas such as organic mechatronics in the framework of robotic-directed science and technology.

Magnetometer Based on the Opto-Electronic Oscillator

NASA Technical Reports Server (NTRS)

Matsko, Andrey B.; Strekalov, Dmitry; Maleki, Lute

2005-01-01

We theoretically propose and discuss properties of two schemes of an all-optical self-oscillating magnetometer based on an opto-electronic oscillator stabilized with an atomic vapor cell. Proof of the principle DC magnetic field measurements characterized with 2 x 10(exp -7) G sensitivity and 1 - 1000 mG dynamic range in one of the schemes are demonstrated.

Opto-electronic oscillator and its applications

NASA Astrophysics Data System (ADS)

Yao, X. S.; Maleki, Lute

1997-04-01

We review the properties of a new class of microwave oscillators called opto-electronic oscillators (OEO). We present theoretical and experimental results of a multi-loop technique for single mode selection. We then describe a new development called coupled OEO (COEO) in which the electrical oscillation is directly coupled with the optical oscillation, producing an OEO that generates stable optical pulses and single mode microwave oscillation simultaneously. Finally we discuss various applications of OEO.

Graphene-MoS2 Heterojunctions for High-Speed Opto-electronics

NASA Astrophysics Data System (ADS)

Horng, Jason; Wang, Alex; Wang, Danqing; Li, Alexander Shengzhi; Wang, Feng

Heterostructures consisting of two-dimensional materials has drawn significant attention in different research fields owning to their novel electronic states and potential applications. Transmitting information with transition metal dichalcogenides(TMDC) electro-optical modulator switch interconnect is of great interest for technological applications. However, their high-speed applications have been slowed by their intrinsically high resistivity as well as the difficulties in making optimized metal contacts. Here, we present a new strategy by using graphene as a tunable contact to two-dimensional semiconductors to explore possible applications in high-speed opto-electronics. We will present an optical study to provide better understanding of band alignment in graphene/MoS2 heterostructures and a demonstration of high-speed opto-electronics based on these heterostructures. The result shows the new scheme could have potential in both opto-modulators and optical sensing applications.

Magnetometer based on the opto-electronic microwave oscillator

NASA Astrophysics Data System (ADS)

Matsko, Andrey B.; Strekalov, Dmitry; Maleki, Lute

2005-03-01

We present a scheme for an all-optical self-oscillating magnetometer based on the opto-electronic oscillator stabilized with an atomic vapor cell. We demonstrate a proof of the principle with DC magnetic field measurements characterized by 2 × 10-7 G sensitivity and 1-1000 mG dynamic range.

Enhancing electronic and optoelectronic performances of tungsten diselenide by plasma treatment.

PubMed

Xie, Yuan; Wu, Enxiu; Hu, Ruixue; Qian, Shuangbei; Feng, Zhihong; Chen, Xuejiao; Zhang, Hao; Xu, Linyan; Hu, Xiaodong; Liu, Jing; Zhang, Daihua

2018-06-21

Transition metal dichalcogenides (TMDCs) have recently become spotlighted as nanomaterials for future electronic and optoelectronic devices. In this work, we develop an effective approach to enhance the electronic and optoelectronic performances of WSe2-based devices by N2O plasma treatment. The hole mobility and sheet density increase by 2 and 5 orders of magnitude, reaching 110 cm2 V-1 s-1 and 2.2 × 1012 cm-2, respectively, after the treatment. At the same time, the contact resistance (Rc) between WSe2 and its metal electrode drop by 5 orders of magnitude from 1.0 GΩ μm to 28.4 kΩ μm. The WSe2 photoconductor exhibits superior performance with high responsivity (1.5 × 105 A W-1), short response time (<2 ms), high detectivity (3.6 × 1013 Jones) and very large photoconductive gain (>106). We have also built a lateral p-n junction on a single piece of WSe2 flake by selective plasma exposure. The junction reaches an exceedingly high rectifying ratio of 106, an excellent photoresponsivity of 2.49 A W-1 and a fast response of 8 ms. The enhanced optoelectronic performance is attributed to band-engineering through the N2O plasma treatment, which can potentially serve as an effective and versatile approach for device engineering and optimization in a wide range of electronic and optoelectronic devices based on 2D materials.

Opto-Electronic Oscillator Using Suppressed Phase Modulation

NASA Technical Reports Server (NTRS)

Dick, G. John; Yu, Nan

2007-01-01

A proposed opto-electronic oscillator (OEO) would generate a microwave signal having degrees of frequency stability and spectral purity greater than those achieved in prior OEOs. The design of this system provides for reduction of noise levels (including the level of phase noise in the final output microwave signal) to below some of the fundamental limits of the prior OEOs while retaining the advantages of photonic generation of microwaves.

Compensating Unknown Time-Varying Delay in Opto-Electronic Platform Tracking Servo System.

PubMed

Xie, Ruihong; Zhang, Tao; Li, Jiaquan; Dai, Ming

2017-05-09

This paper investigates the problem of compensating miss-distance delay in opto-electronic platform tracking servo system. According to the characteristic of LOS (light-of-sight) motion, we setup the Markovian process model and compensate this unknown time-varying delay by feed-forward forecasting controller based on robust H∞ control. Finally, simulation based on double closed-loop PI (Proportion Integration) control system indicates that the proposed method is effective for compensating unknown time-varying delay. Tracking experiments on the opto-electronic platform indicate that RMS (root-mean-square) error is 1.253 mrad when tracking 10° 0.2 Hz signal.

Chemically derived graphene oxide: towards large-area thin-film electronics and optoelectronics.

PubMed

Eda, Goki; Chhowalla, Manish

2010-06-11

Chemically derived graphene oxide (GO) possesses a unique set of properties arising from oxygen functional groups that are introduced during chemical exfoliation of graphite. Large-area thin-film deposition of GO, enabled by its solubility in a variety of solvents, offers a route towards GO-based thin-film electronics and optoelectronics. The electrical and optical properties of GO are strongly dependent on its chemical and atomic structure and are tunable over a wide range via chemical engineering. In this Review, the fundamental structure and properties of GO-based thin films are discussed in relation to their potential applications in electronics and optoelectronics.

EDFA-based coupled opto-electronic oscillator and its phase noise

NASA Technical Reports Server (NTRS)

Salik, Ertan; Yu, Nan; Tu, Meirong; Maleki, Lute

2004-01-01

EDFA-based coupled opto-electronic oscillator (COEO), an integrated optical and microwave oscillator that can generate picosecond optical pulses, is presented. the phase noise measurements of COEO show better performance than synthesizer-driven mode-locked laser.

Common Principles of Molecular Electronics and Nanoscale Electrochemistry.

PubMed

Bueno, Paulo Roberto

2018-05-24

The merging of nanoscale electronics and electrochemistry can potentially modernize the way electronic devices are currently engineered or constructed. It is well known that the greatest challenges will involve not only miniaturizing and improving the performance of mobile devices, but also manufacturing reliable electrical vehicles, and engineering more efficient solar panels and energy storage systems. These are just a few examples of how technological innovation is dependent on both electrochemical and electronic elements. This paper offers a conceptual discussion of this central topic, with particular focus on the impact that uniting physical and chemical concepts at a nanoscale could have on the future development of electroanalytical devices. The specific example to which this article refers pertains to molecular diagnostics, i.e., devices that employ physical and electrochemical concepts to diagnose diseases.

Observation of nanoscale magnetic fields using twisted electron beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grillo, Vincenzo; Harvey, Tyler R.; Venturi, Federico

Electron waves give an unprecedented enhancement to the field of microscopy by providing higher resolving power compared to their optical counterpart. Further information about a specimen, such as electric and magnetic features, can be revealed in electron microscopy because electrons possess both a magnetic moment and charge. In-plane magnetic structures in materials can be studied experimentally using the effect of the Lorentz force. On the other hand, full mapping of the magnetic field has hitherto remained challenging. Here we measure a nanoscale out-of-plane magnetic field by interfering a highly twisted electron vortex beam with a reference wave. We implement amore » recently developed holographic technique to manipulate the electron wavefunction, which gives free electrons an additional unbounded quantized magnetic moment along their propagation direction. Our finding demonstrates that full reconstruction of all three components of nanoscale magnetic fields is possible without tilting the specimen.« less

Observation of nanoscale magnetic fields using twisted electron beams

DOE PAGES

Grillo, Vincenzo; Harvey, Tyler R.; Venturi, Federico; ...

2017-09-25

Electron waves give an unprecedented enhancement to the field of microscopy by providing higher resolving power compared to their optical counterpart. Further information about a specimen, such as electric and magnetic features, can be revealed in electron microscopy because electrons possess both a magnetic moment and charge. In-plane magnetic structures in materials can be studied experimentally using the effect of the Lorentz force. On the other hand, full mapping of the magnetic field has hitherto remained challenging. Here we measure a nanoscale out-of-plane magnetic field by interfering a highly twisted electron vortex beam with a reference wave. We implement amore » recently developed holographic technique to manipulate the electron wavefunction, which gives free electrons an additional unbounded quantized magnetic moment along their propagation direction. Our finding demonstrates that full reconstruction of all three components of nanoscale magnetic fields is possible without tilting the specimen.« less

Hot carrier-enhanced interlayer electron-hole pair multiplication in 2D semiconductor heterostructure photocells

NASA Astrophysics Data System (ADS)

Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger K.; Aji, Vivek; Gabor, Nathaniel M.

2017-12-01

Strong electronic interactions can result in novel particle-antiparticle (electron-hole, e-h) pair generation effects, which may be exploited to enhance the photoresponse of nanoscale optoelectronic devices. Highly efficient e-h pair multiplication has been demonstrated in several important nanoscale systems, including nanocrystal quantum dots, carbon nanotubes and graphene. The small Fermi velocity and nonlocal nature of the effective dielectric screening in ultrathin layers of transition-metal dichalcogenides (TMDs) indicates that e-h interactions are very strong, so high-efficiency generation of e-h pairs from hot electrons is expected. However, such e-h pair multiplication has not been observed in 2D TMD devices. Here, we report the highly efficient multiplication of interlayer e-h pairs in 2D semiconductor heterostructure photocells. Electronic transport measurements of the interlayer I-VSD characteristics indicate that layer-indirect e-h pairs are generated by hot-electron impact excitation at temperatures near T = 300 K. By exploiting this highly efficient interlayer e-h pair multiplication process, we demonstrate near-infrared optoelectronic devices that exhibit 350% enhancement of the optoelectronic responsivity at microwatt power levels. Our findings, which demonstrate efficient carrier multiplication in TMD-based optoelectronic devices, make 2D semiconductor heterostructures viable for a new class of ultra-efficient photodetectors based on layer-indirect e-h excitations.

Investigation, study and practice of optoelectronic MOOCs

NASA Astrophysics Data System (ADS)

Shi, Jianhua; Liu, Wei; Lei, Bing; Yao, Tianfu; Fu, Sihua

2017-08-01

MOOC(Massive Open Online Course) is a new teaching model that has been springing up since 2012. The typical characters are short teaching video, massive learners, flexible place and time to study, etc. Although MOOC is very popular now, opto-electronic MOOCs are not much enough to meet the need of online learners. In this paper, the phylogeny, the current situation and the characters of MOOC were described, the most famous MOOCs' websites, such as Udacity, Coursera, edX, Chinese College MOOC, xuetangx, were introduced, the opto-electronic MOOCs come from these famous MOOCs' website were investigated extensively and studied deeply, the "Application of Opto-electronic Technology MOOC" which was established by our group is introduced, and some conclusions are obtained. These conclusions can give some suggestions to the online learners who are interested in opto-electronic and the teachers who are teaching the opto-electronic curriculums. The preparation of "Opto-electronic Technology MOOC" is described in short.

Quantifying Nanoscale Order in Amorphous Materials via Fluctuation Electron Microscopy

ERIC Educational Resources Information Center

Bogle, Stephanie Nicole

2009-01-01

Fluctuation electron microscopy (FEM) has been used to study the nanoscale order in various amorphous materials. The method is explicitly sensitive to 3- and 4-body atomic correlation functions in amorphous materials; this is sufficient to establish the existence of structural order on the nanoscale, even when the radial distribution function…

3-DIMENSIONAL Optoelectronic

NASA Astrophysics Data System (ADS)

Krishnamoorthy, Ashok Venketaraman

This thesis covers the design, analysis, optimization, and implementation of optoelectronic (N,M,F) networks. (N,M,F) networks are generic space-division networks that are well suited to implementation using optoelectronic integrated circuits and free-space optical interconnects. An (N,M,F) networks consists of N input channels each having a fanout F_{rm o}, M output channels each having a fanin F_{rm i}, and Log_{rm K}(N/F) stages of K x K switches. The functionality of the fanout, switching, and fanin stages depends on the specific application. Three applications of optoelectronic (N,M,F) networks are considered. The first is an optoelectronic (N,1,1) content -addressable memory system that achieves associative recall on two-dimensional images retrieved from a parallel-access optical memory. The design and simulation of the associative memory are discussed, and an experimental emulation of a prototype system using images from a parallel-readout optical disk is presented. The system design provides superior performance to existing electronic content-addressable memory chips in terms of capacity and search rate, and uses readily available optical disk and VLSI technologies. Next, a scalable optoelectronic (N,M,F) neural network that uses free-space holographic optical interconnects is presented. The neural architecture minimizes the number of optical transmitters needed, and provides accurate electronic fanin with low signal skew, and dendritic-type fan-in processing capability in a compact layout. Optimal data-encoding methods and circuit techniques are discussed. The implementation of an prototype optoelectronic neural system, and its application to a simple recognition task is demonstrated. Finally, the design, analysis, and optimization of a (N,N,F) self-routing, packet-switched multistage interconnection network is described. The network is suitable for parallel computing and broadband switching applications. The tradeoff between optical and electronic

Recent Results With Coupled Opto-Electronic Oscillators

NASA Astrophysics Data System (ADS)

Yao, X. S.; Maleki, L.; Wu, C.; Davis, L.; Forouhar, S.

1998-07-01

We present experimental results of coupled opto-electronic oscillators (COEOs) constructed with a semiconductor optical-amplifier-based ring laser, a semiconductor Fabry-Perot laser, and a semiconductor colliding-pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 ps and RF signals as high in frequency as 18 GHz with a spectral purity comparable to an HP 8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.

Opto-electronic microwave oscillator

NASA Astrophysics Data System (ADS)

Yao, X. Steve; Maleki, Lute

1996-12-01

Photonic applications are important in RF communication systems to enhance many functions including remote transfer of antenna signals, carrier frequency up or down conversion, antenna beam steering, and signal filtering. Many of these functions require reference frequency oscillators. However, traditional microwave oscillators cannot meet all the requirements of photonic communication systems that need high frequency and low phase noise signal generation. Because photonic systems involve signals in both optical and electrical domains, an ideal signal source should be able to provide electrical and optical signals. In addition, it should be possible to synchronize or control the signal source by both electrical and optical means. We present such a source1-2 that converts continuous light energy into stable and spectrally pure microwave signals. This Opto-Electronic Oscillator, OEO, consists of a pump laser and a feedback circuit including an intensity modulator, an optical fiber delay line, a photodetector, an amplifier, and a filter, as shown in Figure 1a. Its oscillation frequency, limited only by the speed of the modulator, can be up to 75 GHz.

Nanoscale Insight and Control of Structural and Electronic Properties of Organic Semiconductor / Metal Interfaces

NASA Astrophysics Data System (ADS)

Maughan, Bret

Organic semiconductor interfaces are promising materials for use in next-generation electronic and optoelectronic devices. Current models for metal-organic interfacial electronic structure and dynamics are inadequate for strongly hybridized systems. This work aims to address this issue by identifying the factors most important for understanding chemisorbed interfaces with an eye towards tuning the interfacial properties. Here, I present the results of my research on chemisorbed interfaces formed between thin-films of phthalocyanine molecules grown on monocrystalline Cu(110). Using atomically-resolved nanoscale imaging in combination with surface-sensitive photoemission techniques, I show that single-molecule level interactions control the structural and electronic properties of the interface. I then demonstrate that surface modifications aimed at controlling interfacial interactions are an effective way to tailor the physical and electronic structure of the interface. This dissertation details a systematic investigation of the effect of molecular and surface functionalization on interfacial interactions. To understand the role of molecular structure, two types of phthalocyanine (Pc) molecules are studied: non-planar, dipolar molecules (TiOPc), and planar, non-polar molecules (H2Pc and CuPc). Multiple adsorption configurations for TiOPc lead to configuration-dependent self-assembly, Kondo screening, and electronic energy-level alignment. To understand the role of surface structure, the Cu(110) surface is textured and passivated by oxygen chemisorption prior to molecular deposition, which gives control over thin-film growth and interfacial electronic structure in H2Pc and CuPc films. Overall, the work presented here demonstrates a method for understanding interfacial electronic structure of strongly hybridized interfaces, an important first step towards developing more robust models for metal-organic interfaces, and reliable, predictive tuning of interfacial

Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics.

PubMed

Wang, Gongming; Li, Dehui; Cheng, Hung-Chieh; Li, Yongjia; Chen, Chih-Yen; Yin, Anxiang; Zhao, Zipeng; Lin, Zhaoyang; Wu, Hao; He, Qiyuan; Ding, Mengning; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

2015-10-01

Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems.

Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics

PubMed Central

Wang, Gongming; Li, Dehui; Cheng, Hung-Chieh; Li, Yongjia; Chen, Chih-Yen; Yin, Anxiang; Zhao, Zipeng; Lin, Zhaoyang; Wu, Hao; He, Qiyuan; Ding, Mengning; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

2015-01-01

Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems. PMID:26601297

Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics

DOE PAGES

Wang, Gongming; Li, Dehui; Cheng, Hung -Chieh; ...

2015-10-02

Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that themore » resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. Furthermore, the ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems.« less

Design Two-dimensional Materials with Superb Electronic and Optoelectronic Properties: The case of SiS

NASA Astrophysics Data System (ADS)

Wei, Su-Huai; Yang, Ji-Hui; Zhang, Yueyu; Yin, Wan-Jian; Gong, X. G.; Yakobson, Boris I.

Two-dimensional (2D) semiconductors have many unique electronic and optoelectronic properties that is suitable for novel device applications. Most of the current study are focused on group IV or transition metal chalcogenides. In this study, using atomic transmutation and global optimization methods, we identified two group IV-VI 2D materials, Pma2-SiS and silicene sulfide that can overcome shortcomings encountered in conventional 2D semiconducttord. Pma2-SiS is found to be both chemically, energetically, and thermally stable. Most importantly, Pma2-SiS has unique electronic and optoelectronic properties, including direct bandgaps suitable for solar cells, good mobility for nanoelectronics, good flexibility of property tuning by layer thickness and strain appliance, and good air stability as well. Therefore, Pma2-SiS is expected to be a very promising 2D material in the field of 2D electronics and optoelectronics. Silicene sulfide also shows similar properties. We believe that the designing principles and approaches used to identify these materials have great potential to accelerate future finding of new functional materials within the 2D families.

Optoelectronically probing the density of nanowire surface trap states to the single state limit

NASA Astrophysics Data System (ADS)

Dan, Yaping

2015-02-01

Surface trap states play a dominant role in the optoelectronic properties of nanoscale devices. Understanding the surface trap states allows us to properly engineer the device surfaces for better performance. But characterization of surface trap states at nanoscale has been a formidable challenge using the traditional capacitive techniques. Here, we demonstrate a simple but powerful optoelectronic method to probe the density of nanowire surface trap states to the single state limit. In this method, we choose to tune the quasi-Fermi level across the bandgap of a silicon nanowire photoconductor, allowing for capture and emission of photogenerated charge carriers by surface trap states. The experimental data show that the energy density of nanowire surface trap states is in a range from 109 cm-2/eV at deep levels to 1012 cm-2/eV near the conduction band edge. This optoelectronic method allows us to conveniently probe trap states of ultra-scaled nano/quantum devices at extremely high precision.

Recent results with the coupled opto-electronic oscillator

NASA Astrophysics Data System (ADS)

Yao, X. S.; Maleki, Lute; Wu, Chi; Davis, Lawrence J.; Forouhar, Siamak

1998-11-01

We present experimental results of coupled opto-electronic oscillators (COEO) constructed with a semiconductor optical amplifier based ring laser, a semiconductor Fabry-Perot laser, and a semiconductor colliding pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 picoseconds and RF signals as high in frequency as 18 GHz with a spectral purity comparable with a HP8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.

Visualizing nanoscale excitonic relaxation properties of disordered edges and grain boundaries in monolayer molybdenum disulfide

DOE PAGES

Bao, Wei; Borys, Nicholas J.; Ko, Changhyun; ...

2015-08-13

The ideal building blocks for atomically thin, flexible optoelectronic and catalytic devices are two-dimensional monolayer transition metal dichalcogenide semiconductors. Although challenging for two-dimensional systems, sub-diffraction optical microscopy provides a nanoscale material understanding that is vital for optimizing their optoelectronic properties. We use the ‘Campanile’ nano-optical probe to spectroscopically image exciton recombination within monolayer MoS2 with sub-wavelength resolution (60 nm), at the length scale relevant to many critical optoelectronic processes. Moreover, synthetic monolayer MoS2 is found to be composed of two distinct optoelectronic regions: an interior, locally ordered but mesoscopically heterogeneous two-dimensional quantum well and an unexpected ~300-nm wide, energetically disorderedmore » edge region. Further, grain boundaries are imaged with sufficient resolution to quantify local exciton-quenching phenomena, and complimentary nano-Auger microscopy reveals that the optically defective grain boundary and edge regions are sulfur deficient. In conclusion, the nanoscale structure–property relationships established here are critical for the interpretation of edge- and boundary-related phenomena and the development of next-generation two-dimensional optoelectronic devices.« less

Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device.

PubMed

Park, Sangsu; Noh, Jinwoo; Choo, Myung-Lae; Sheri, Ahmad Muqeem; Chang, Man; Kim, Young-Bae; Kim, Chang Jung; Jeon, Moongu; Lee, Byung-Geun; Lee, Byoung Hun; Hwang, Hyunsang

2013-09-27

Efforts to develop scalable learning algorithms for implementation of networks of spiking neurons in silicon have been hindered by the considerable footprints of learning circuits, which grow as the number of synapses increases. Recent developments in nanotechnologies provide an extremely compact device with low-power consumption.In particular, nanoscale resistive switching devices (resistive random-access memory (RRAM)) are regarded as a promising solution for implementation of biological synapses due to their nanoscale dimensions, capacity to store multiple bits and the low energy required to operate distinct states. In this paper, we report the fabrication, modeling and implementation of nanoscale RRAM with multi-level storage capability for an electronic synapse device. In addition, we first experimentally demonstrate the learning capabilities and predictable performance by a neuromorphic circuit composed of a nanoscale 1 kbit RRAM cross-point array of synapses and complementary metal-oxide-semiconductor neuron circuits. These developments open up possibilities for the development of ubiquitous ultra-dense, ultra-low-power cognitive computers.

Opto-electronic conversion logic behaviour through dynamic modulation of electron/energy transfer states at the TiO2-carbon quantum dot interface.

PubMed

Wang, Fang; Zhang, Yonglai; Liu, Yang; Wang, Xuefeng; Shen, Mingrong; Lee, Shuit-Tong; Kang, Zhenhui

2013-03-07

Here we show a bias-mediated electron/energy transfer process at the CQDs-TiO(2) interface for the dynamic modulation of opto-electronic properties. Different energy and electron transfer states have been observed in the CQDs-TNTs system due to the up-conversion photoluminescence and the electron donation/acceptance properties of the CQDs decorated on TNTs.

Adaptive integral backstepping sliding mode control for opto-electronic tracking system based on modified LuGre friction model

NASA Astrophysics Data System (ADS)

Yue, Fengfa; Li, Xingfei; Chen, Cheng; Tan, Wenbin

2017-12-01

In order to improve the control accuracy and stability of opto-electronic tracking system fixed on reef or airport under friction and external disturbance conditions, adaptive integral backstepping sliding mode control approach with friction compensation is developed to achieve accurate and stable tracking for fast moving target. The nonlinear observer and slide mode controller based on modified LuGre model with friction compensation can effectively reduce the influence of nonlinear friction and disturbance of this servo system. The stability of the closed-loop system is guaranteed by Lyapunov theory. The steady-state error of the system is eliminated by integral action. The adaptive integral backstepping sliding mode controller and its performance are validated by a nonlinear modified LuGre dynamic model of the opto-electronic tracking system in simulation and practical experiments. The experiment results demonstrate that the proposed controller can effectively realise the accuracy and stability control of opto-electronic tracking system.

Impact excitation and electron-hole multiplication in graphene and carbon nanotubes.

PubMed

Gabor, Nathaniel M

2013-06-18

In semiconductor photovoltaics, photoconversion efficiency is governed by a simple competition: the incident photon energy is either transferred to the crystal lattice (heat) or transferred to electrons. In conventional materials, energy loss to the lattice is more efficient than energy transferred to electrons, thus limiting the power conversion efficiency. Quantum electronic systems, such as quantum dots, nanowires, and two-dimensional electronic membranes, promise to tip the balance in this competition by simultaneously limiting energy transfer to the lattice and enhancing energy transfer to electrons. By exploring the optical, thermal, and electronic properties of quantum materials, we may perhaps find an ideal optoelectronic material that provides low cost fabrication, facile systems integration, and a means to surpass the standard limit for photoconversion efficiency. Nanoscale carbon materials, such as graphene and carbon nanotubes, provide ideal experimental quantum systems in which to explore optoelectronic behavior for applications in solar energy harvesting. Within essentially the same material, researchers can achieve a broad spectrum of energetic configurations, from a gapless semimetal to a large band-gap semiconducting nanowire. Owing to their nanoscale dimensions, graphene and carbon nanotubes exhibit electronic and optical properties that reflect strong electron-electron interactions. Such strong interactions may lead to exotic low-energy electron transport behavior and high-energy electron scattering processes such as impact excitation and the inverse process of Auger recombination. High-energy processes, which become very important under photoexcitation, may be particularly efficient in nanoscale carbon materials due to the relativistic-like, charged particle band structure and sensitivity to the dielectric environment. In addition, due to the covalently bonded carbon framework that makes up these materials, electron-phonon coupling is very weak

An Electronic Structure Approach to Charge Transfer and Transport in Molecular Building Blocks for Organic Optoelectronics

NASA Astrophysics Data System (ADS)

Hendrickson, Heidi Phillips

A fundamental understanding of charge separation in organic materials is necessary for the rational design of optoelectronic devices suited for renewable energy applications and requires a combination of theoretical, computational, and experimental methods. Density functional theory (DFT) and time-dependent (TD)DFT are cost effective ab-initio approaches for calculating fundamental properties of large molecular systems, however conventional DFT methods have been known to fail in accurately characterizing frontier orbital gaps and charge transfer states in molecular systems. In this dissertation, these shortcomings are addressed by implementing an optimally-tuned range-separated hybrid (OT-RSH) functional approach within DFT and TDDFT. The first part of this thesis presents the way in which RSH-DFT addresses the shortcomings in conventional DFT. Environmentally-corrected RSH-DFT frontier orbital energies are shown to correspond to thin film measurements for a set of organic semiconducting molecules. Likewise, the improved RSH-TDDFT description of charge transfer excitations is benchmarked using a model ethene dimer and silsesquioxane molecules. In the second part of this thesis, RSH-DFT is applied to chromophore-functionalized silsesquioxanes, which are currently investigated as candidates for building blocks in optoelectronic applications. RSH-DFT provides insight into the nature of absorptive and emissive states in silsesquioxanes. While absorption primarily involves transitions localized on one chromophore, charge transfer between chromophores and between chromophore and silsesquioxane cage have been identified. The RSH-DFT approach, including a protocol accounting for complex environmental effects on charge transfer energies, was tested and validated against experimental measurements. The third part of this thesis addresses quantum transport through nano-scale junctions. The ability to quantify a molecular junction via spectroscopic methods is crucial to their

Full 3D opto-electronic simulation tool for nanotextured solar cells (Conference Presentation)

NASA Astrophysics Data System (ADS)

Michallon, Jérôme; Collin, Stéphane

2017-04-01

Increasing efforts on the photovoltaics research have recently been devoted to material savings, leading to the emergence of new designs based on nanotextured and nanowire-based solar cells. The use of small absorber volumes, light-trapping nanostructures and unconventional carrier collection schemes (radial nanowire junctions, point contacts in planar structures,…) increases the impact of surfaces recombination and induces homogeneity in the photogenerated carrier concentrations. The investigation of their impacts on the device performances need to be addressed using full 3D coupled opto-electrical modeling. In this context, we have developed a new tool for full 3D opto-electrical simulation using the most advanced optical and electrical simulation techniques. We will present an overview of its simulation capabilities and the key issues that have been solved to make it fully operational and reliable. We will provide various examples of opto-electronic simulation of (i) nanostructured solar cells with localized contacts and (ii) nanowire solar cells. We will also show how opto-electronic simulation can be used to simulate light- and electron-beam induced current (LBIC/EBIC) experiments, targeting quantitative analysis of the passivation properties of surfaces.

Simple Optoelectronic Feedback in Microwave Oscillators

NASA Technical Reports Server (NTRS)

Maleki, Lute; Iltchenko, Vladimir

2009-01-01

A proposed method of stabilizing microwave and millimeter-wave oscillators calls for the use of feedback in optoelectronic delay lines characterized by high values of the resonance quality factor (Q). The method would extend the applicability of optoelectronic feedback beyond the previously reported class of optoelectronic oscillators that comprise two-port electronic amplifiers in closed loops with high-Q feedback circuits.

Doping dependent crystal structures and optoelectronic properties of n-type CdSe:Ga nanowries.

PubMed

Hu, Zhizhong; Zhang, Xiujuan; Xie, Chao; Wu, Chunyan; Zhang, Xiaozhen; Bian, Liang; Wu, Yiming; Wang, Li; Zhang, Yuping; Jie, Jiansheng

2011-11-01

Although CdSe nanostructures possess excellent electrical and optical properties, efforts to make nano-optoelectronic devices from CdSe nanostructures have been hampered by the lack of efficient methods to rationally control their structural and electrical characteristics. Here, we report CdSe nanowires (NWs) with doping dependent crystal structures and optoelectronic properties by using gallium (Ga) as the efficient n-type dopant via a simple thermal co-evaporation method. The phase change of CdSe NWs from wurtzite to zinc blende with increased doping level is observed. Systematical measurements on the transport properties of the CdSe:Ga NWs reveal that the NW conductivity could be tuned in a wide range of near nine orders of magnitude by adjusting the Ga doping level and a high electron concentration up to 4.5 × 10(19) cm(-3) is obtained. Moreover, high-performance top-gate field-effect transistors are constructed based on the individual CdSe:Ga NWs by using high-κ HfO(2) as the gate dielectric. The great potential of the CdSe:Ga NWs as high-sensitive photodetectors and nanoscale light emitters is also exploited, revealing the promising applications of the CdSe:Ga NWs in new-generation nano-optoelectronics.

Assembly of opto-electronic module with improved heat sink

DOEpatents

Chan, Benson; Fortier, Paul Francis; Freitag, Ladd William; Galli, Gary T.; Guindon, Francois; Johnson, Glen Walden; Letourneau, Martial; Sherman, John H.; Tetreault, Real

2004-11-23

A heat sink for a transceiver optoelectronic module including dual direct heat paths and a structure which encloses a number of chips having a central web which electrically isolates transmitter and receiver chips from each other. A retainer for an optical coupler having a port into which epoxy is poured. An overmolded base for an optoelectronic module having epoxy flow controller members built thereon. Assembly methods for an optoelectronic module including gap setting and variation of a TAB bonding process.

Nanoscale electron manipulation in metals with intense THz electric fields

NASA Astrophysics Data System (ADS)

Takeda, Jun; Yoshioka, Katsumasa; Minami, Yasuo; Katayama, Ikufumi

2018-03-01

Improved control over the electromagnetic properties of metals on a nanoscale is crucial for the development of next-generation nanoelectronics and plasmonic devices. Harnessing the terahertz (THz)-electric-field-induced nonlinearity for the motion of electrons is a promising method of manipulating the local electromagnetic properties of metals, while avoiding undesirable thermal effects and electronic transitions. In this review, we demonstrate the manipulation of electron delocalization in ultrathin gold (Au) films with nanostructures, by intense THz electric-field transients. On increasing the electric-field strength of the THz pulses, the transmittance in the THz-frequency region abruptly decreases around the percolation threshold. The observed THz-electric-field-induced nonlinearity is analysed, based on the Drude-Smith model. The results suggest that ultrafast electron delocalization occurs by electron tunnelling across the narrow insulating bridge between the Au nanostructures, without material breakdown. In order to quantitatively discuss the tunnelling process, we perform scanning tunnelling microscopy with carrier-envelope phase (CEP)-controlled single-cycle THz electric fields. By applying CEP-controlled THz electric fields to the 1 nm nanogap between a metal nanotip and graphite sample, many electrons could be coherently driven through the quantum tunnelling process, either from the nanotip to the sample or vice versa. The presented concept, namely, electron tunnelling mediated by CEP-controlled single-cycle THz electric fields, can facilitate the development of nanoscale electron manipulation, applicable to next-generation ultrafast nanoelectronics and plasmonic devices.

Nanoscale rotary motors driven by electron tunneling.

PubMed

Wang, Boyang; Vuković, Lela; Král, Petr

2008-10-31

We examine by semiclassical molecular dynamics simulations the possibility of driving nanoscale rotary motors by electron tunneling. The model systems studied have a carbon nanotube shaft with covalently attached "isolating" molecular stalks ending with "conducting" blades. Periodic charging and discharging of the blades at two metallic electrodes maintains an electric dipole on the blades that is rotated by an external electric field. Our simulations demonstrate that these molecular motors can be efficient under load and in the presence of noise and defects.

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

PubMed Central

Gong, Chuanhui; Zhang, Yuxi; Chen, Wei; Lei, Tianyu; Pu, Junru; Dai, Liping; Wu, Chunyang; Li, Liang

2017-01-01

Abstract With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high‐performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe2 and ReX2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low‐symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field‐effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high‐performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed. PMID:29270337

Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides.

PubMed

Gong, Chuanhui; Zhang, Yuxi; Chen, Wei; Chu, Junwei; Lei, Tianyu; Pu, Junru; Dai, Liping; Wu, Chunyang; Cheng, Yuhua; Zhai, Tianyou; Li, Liang; Xiong, Jie

2017-12-01

With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high-performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe 2 and ReX 2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low-symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field-effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high-performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed.

Opto-electronic characterization of third-generation solar cells.

PubMed

Neukom, Martin; Züfle, Simon; Jenatsch, Sandra; Ruhstaller, Beat

2018-01-01

We present an overview of opto-electronic characterization techniques for solar cells including light-induced charge extraction by linearly increasing voltage, impedance spectroscopy, transient photovoltage, charge extraction and more. Guidelines for the interpretation of experimental results are derived based on charge drift-diffusion simulations of solar cells with common performance limitations. It is investigated how nonidealities like charge injection barriers, traps and low mobilities among others manifest themselves in each of the studied cell characterization techniques. Moreover, comprehensive parameter extraction for an organic bulk-heterojunction solar cell comprising PCDTBT:PC 70 BM is demonstrated. The simulations reproduce measured results of 9 different experimental techniques. Parameter correlation is minimized due to the combination of various techniques. Thereby a route to comprehensive and accurate parameter extraction is identified.

Solution growth of single crystal methylammonium lead halide perovskite nanostructures for optoelectronic and photovoltaic applications.

PubMed

Fu, Yongping; Meng, Fei; Rowley, Matthew B; Thompson, Blaise J; Shearer, Melinda J; Ma, Dewei; Hamers, Robert J; Wright, John C; Jin, Song

2015-05-06

Understanding crystal growth and improving material quality is important for improving semiconductors for electronic, optoelectronic, and photovoltaic applications. Amidst the surging interest in solar cells based on hybrid organic-inorganic lead halide perovskites and the exciting progress in device performance, improved understanding and better control of the crystal growth of these perovskites could further boost their optoelectronic and photovoltaic performance. Here, we report new insights on the crystal growth of the perovskite materials, especially crystalline nanostructures. Specifically, single crystal nanowires, nanorods, and nanoplates of methylammonium lead halide perovskites (CH3NH3PbI3 and CH3NH3PbBr3) are successfully grown via a dissolution-recrystallization pathway in a solution synthesis from lead iodide (or lead acetate) films coated on substrates. These single crystal nanostructures display strong room-temperature photoluminescence and long carrier lifetime. We also report that a solid-liquid interfacial conversion reaction can create a highly crystalline, nanostructured MAPbI3 film with micrometer grain size and high surface coverage that enables photovoltaic devices with a power conversion efficiency of 10.6%. These results suggest that single-crystal perovskite nanostructures provide improved photophysical properties that are important for fundamental studies and future applications in nanoscale optoelectronic and photonic devices.

Theory of Electron, Phonon and Spin Transport in Nanoscale Quantum Devices.

PubMed

Sadeghi, Hatef

2018-06-21

At the level of fundamental science, it was recently demonstrated that molecular wires can mediate long-range phase-coherent tunnelling with remarkably low attenuation over a few nanometre even at room temperature. Furthermore, a large mean free path has been observed in graphene and other graphene-like two-dimensional materials. These create the possibility of using quantum and phonon interference to engineer electron and phonon transport for wide range of applications such as molecular switches, sensors, piezoelectricity, thermoelectricity and thermal management. To understand transport properties of such devices, it is crucial to calculate their electronic and phononic transmission coefficients. The aim of this tutorial article is to review the state-of-art theoretical and mathematical techniques to treat electron, phonon and spin transport in nanoscale molecular junctions. This helps not only to explain new phenomenon observed experimentally but also provides a vital design tool to develop novel nanoscale quantum devices. © 2018 IOP Publishing Ltd.

Recent progress in opto-electronic oscillator

NASA Technical Reports Server (NTRS)

Maleki, Lute

2005-01-01

The optoelectronic oscillator (OEO) is a unique device based on photonics techniques to generate highly spectrally pure microwave signals [1]. The development of the OEO was motivated by the need for high performance oscillators in the frequency range larger than 10 GHz, where conventional electronic oscillators have a number of limitations. These limitations typically stem from the product of fQ, where f is the oscillator frequency and Q is the quality factor of the resonator in the oscillator. In conventional resonators, whether electromagnetic or piezoelectric, this product is usually a constant. Thus, as the oscillator frequency is pushed higher, the quality factor degrades, resulting in degradation of the phase noise of the oscillator. An approach to mitigate the problem is to start with a very high quality signal in the 5 to 100 MHz range generated by a quartz oscillator and multiply the frequency to achieve the desired microwave signal. Here again, frequency multiplication also results in an increase of the phase noise by a factor of 2010gN, where N is the multiplication factor.

Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing.

PubMed

Jariwala, Deep; Sangwan, Vinod K; Lauhon, Lincoln J; Marks, Tobin J; Hersam, Mark C

2013-04-07

In the last three decades, zero-dimensional, one-dimensional, and two-dimensional carbon nanomaterials (i.e., fullerenes, carbon nanotubes, and graphene, respectively) have attracted significant attention from the scientific community due to their unique electronic, optical, thermal, mechanical, and chemical properties. While early work showed that these properties could enable high performance in selected applications, issues surrounding structural inhomogeneity and imprecise assembly have impeded robust and reliable implementation of carbon nanomaterials in widespread technologies. However, with recent advances in synthesis, sorting, and assembly techniques, carbon nanomaterials are experiencing renewed interest as the basis of numerous scalable technologies. Here, we present an extensive review of carbon nanomaterials in electronic, optoelectronic, photovoltaic, and sensing devices with a particular focus on the latest examples based on the highest purity samples. Specific attention is devoted to each class of carbon nanomaterial, thereby allowing comparative analysis of the suitability of fullerenes, carbon nanotubes, and graphene for each application area. In this manner, this article will provide guidance to future application developers and also articulate the remaining research challenges confronting this field.

Single molecule-level study of donor-acceptor interactions and nanoscale environment in blends

NASA Astrophysics Data System (ADS)

Quist, Nicole; Grollman, Rebecca; Rath, Jeremy; Robertson, Alex; Haley, Michael; Anthony, John; Ostroverkhova, Oksana

2017-02-01

Organic semiconductors have attracted considerable attention due to their applications in low-cost (opto)electronic devices. The most successful organic materials for applications that rely on charge carrier generation, such as solar cells, utilize blends of several types of molecules. In blends, the local environment strongly influences exciton and charge carrier dynamics. However, relationship between nanoscale features and photophysics is difficult to establish due to the lack of necessary spatial resolution. We use functionalized fluorinated pentacene (Pn) molecule as single molecule probes of intermolecular interactions and of the nanoscale environment in blends containing donor and acceptor molecules. Single Pn donor (D) molecules were imaged in PMMA in the presence of acceptor (A) molecules using wide-field fluorescence microscopy. Two sample configurations were realized: (i) a fixed concentration of Pn donor molecules, with increasing concentration of acceptor molecules (functionalized indenflouorene or PCBM) and (ii) a fixed concentration of acceptor molecules with an increased concentration of the Pn donor. The D-A energy transfer and changes in the donor emission due to those in the acceptor- modified polymer morphology were quantified. The increase in the acceptor concentration was accompanied by enhanced photobleaching and blinking of the Pn donor molecules. To better understand the underlying physics of these processes, we modeled photoexcited electron dynamics using Monte Carlo simulations. The simulated blinking dynamics were then compared to our experimental data, and the changes in the transition rates were related to the changes in the nanoscale environment. Our study provides insight into evolution of nanoscale environment during the formation of bulk heterojunctions.

Charge separation at nanoscale interfaces: energy-level alignment including two-quasiparticle interactions.

PubMed

Li, Huashan; Lin, Zhibin; Lusk, Mark T; Wu, Zhigang

2014-10-21

The universal and fundamental criteria for charge separation at interfaces involving nanoscale materials are investigated. In addition to the single-quasiparticle excitation, all the two-quasiparticle effects including exciton binding, Coulomb stabilization, and exciton transfer are considered, which play critical roles on nanoscale interfaces for optoelectronic applications. We propose a scheme allowing adding these two-quasiparticle interactions on top of the single-quasiparticle energy level alignment for determining and illuminating charge separation at nanoscale interfaces. Employing the many-body perturbation theory based on Green's functions, we quantitatively demonstrate that neglecting or simplifying these crucial two-quasiparticle interactions using less accurate methods is likely to predict qualitatively incorrect charge separation behaviors at nanoscale interfaces where quantum confinement dominates.

Electron tunneling in nanoscale electrodes for battery applications

NASA Astrophysics Data System (ADS)

Yamada, Hidenori; Narayanan, Rajaram; Bandaru, Prabhakar R.

2018-03-01

It is shown that the electrical current that may be obtained from a nanoscale electrochemical system is sensitive to the dimensionality of the electrode and the density of states (DOS). Considering the DOS of lower dimensional systems, such as two-dimensional graphene, one-dimensional nanotubes, or zero-dimensional quantum dots, yields a distinct variation of the current-voltage characteristics. Such aspects go beyond conventional Arrhenius theory based kinetics which are often used in experimental interpretation. The obtained insights may be adapted to other devices, such as solid-state batteries. It is also indicated that electron transport in such devices may be considered through electron tunneling.

Molecular and nanoscale materials and devices in electronics.

PubMed

Fu, Lei; Cao, Lingchao; Liu, Yunqi; Zhu, Daoben

2004-12-13

Over the past several years, there have been many significant advances toward the realization of electronic computers integrated on the molecular scale and a much greater understanding of the types of materials that will be useful in molecular devices and their properties. It was demonstrated that individual molecules could serve as incomprehensibly tiny switch and wire one million times smaller than those on conventional silicon microchip. This has resulted very recently in the assembly and demonstration of tiny computer logic circuits built from such molecular scale devices. The purpose of this review is to provide a general introduction to molecular and nanoscale materials and devices in electronics.

Opto-electronic characterization of third-generation solar cells

PubMed Central

Jenatsch, Sandra

2018-01-01

Abstract We present an overview of opto-electronic characterization techniques for solar cells including light-induced charge extraction by linearly increasing voltage, impedance spectroscopy, transient photovoltage, charge extraction and more. Guidelines for the interpretation of experimental results are derived based on charge drift-diffusion simulations of solar cells with common performance limitations. It is investigated how nonidealities like charge injection barriers, traps and low mobilities among others manifest themselves in each of the studied cell characterization techniques. Moreover, comprehensive parameter extraction for an organic bulk-heterojunction solar cell comprising PCDTBT:PC70BM is demonstrated. The simulations reproduce measured results of 9 different experimental techniques. Parameter correlation is minimized due to the combination of various techniques. Thereby a route to comprehensive and accurate parameter extraction is identified. PMID:29707069

Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.

PubMed

Wang, Feng; Wang, Zhenxing; Jiang, Chao; Yin, Lei; Cheng, Ruiqing; Zhan, Xueying; Xu, Kai; Wang, Fengmei; Zhang, Yu; He, Jun

2017-09-01

2D layered semiconducting materials (2DLSMs) represent the thinnest semiconductors, holding many novel properties, such as the absence of surface dangling bonds, sizable band gaps, high flexibility, and ability of artificial assembly. With the prospect of bringing revolutionary opportunities for electronic and optoelectronic applications, 2DLSMs have prospered over the past twelve years. From materials preparation and property exploration to device applications, 2DLSMs have been extensively investigated and have achieved great progress. However, there are still great challenges for high-performance devices. In this review, we provide a brief overview on the recent breakthroughs in device optimization based on 2DLSMs, particularly focussing on three aspects: device configurations, basic properties of channel materials, and heterostructures. The effects from device configurations, i.e., electrical contacts, dielectric layers, channel length, and substrates, are discussed. After that, the affect of the basic properties of 2DLSMs on device performance is summarized, including crystal defects, crystal symmetry, doping, and thickness. Finally, we focus on heterostructures based on 2DLSMs. Through this review, we try to provide a guide to improve electronic and optoelectronic devices of 2DLSMs for achieving practical device applications in the future. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optoelectronic-cache memory system architecture.

PubMed

Chiarulli, D M; Levitan, S P

1996-05-10

We present an investigation of the architecture of an optoelectronic cache that can integrate terabit optical memories with the electronic caches associated with high-performance uniprocessors and multiprocessors. The use of optoelectronic-cache memories enables these terabit technologies to provide transparently low-latency secondary memory with frame sizes comparable with disk pages but with latencies that approach those of electronic secondary-cache memories. This enables the implementation of terabit memories with effective access times comparable with the cycle times of current microprocessors. The cache design is based on the use of a smart-pixel array and combines parallel free-space optical input-output to-and-from optical memory with conventional electronic communication to the processor caches. This cache and the optical memory system to which it will interface provide a large random-access memory space that has a lower overall latency than that of magnetic disks and disk arrays. In addition, as a consequence of the high-bandwidth parallel input-output capabilities of optical memories, fault service times for the optoelectronic cache are substantially less than those currently achievable with any rotational media.

Operational parameters of an opto-electronic neural network employing fixed planar holographic interconnects

NASA Astrophysics Data System (ADS)

Keller, P. E.; Gmitro, A. F.

1993-07-01

A prototype neutral network system of multifaceted, planar interconnection holograms and opto-electronic neurons is analyzed. This analysis shows that a hologram fabricated with electron-beam lithography has the capacity to connect 6700 neuron outputs to 6700 neuron inputs, and that, the encoded synaptic weights have a precision of approximately 5 bits. Higher interconnection densities can be achieved by accepting a lower synaptic weight accuracy. For systems employing laser diodes at the outputs of the neurons, processing rates in the range of 45 to 720 trillion connections per second can potentially be achieved.

Opto-Electronic Oscillator Stabilized By A Hyperfine Atomic Transition

NASA Technical Reports Server (NTRS)

Strekalov, Dmitry; Aveline, David; Matsko, Andrey B.; Thompson, Robert; Yu, Nan

2004-01-01

Opto-electronic oscillator (OEO) is a closed-loop system with part of the loop is implemented by an optical beam, and the rest by RF circuitry. The technological advantage of this approach over traditional all-RF loops in the gigahertz range comes from the that frequency filtering can be done far more efficiently in the optical range with compact, low power, and have superior stability. In this work, we report our preliminary results on using the phenomenon of coherent population trapping in (87) Rb vapor as an optical filter. Such a filter allows us to stabilize the OEO at the hyperfine splitting frequency of rubidium, thus implementing a novel type of frequency standard.

New Schemes for Improved Opto-Electronic Oscillator

NASA Technical Reports Server (NTRS)

Maleki, Lute; Yao, Steve; Ji, Yu; Ilchenko, Vladimir

2000-01-01

The opto-Electronic Oscillator (OEO) has already demonstrated superior spectral purity as a for microwave and millimeter wave reference signals. Experimental results have produced a performance characterized by noise as low as -50 dBc/Hz at 10 Hz and -140 dBc/Hz for a 10 GHz oscillator. This performance is significant because it was produced by an oscillator that was free running. Since the noise in an OEO is independent of the oscillation frequency, the same performance may also be obtained at higher frequency. The recent work in our laboratory has been focused in three areas: 1) realization of a compact OEO based on semiconductor lasers and modulators, 2) reduction of the close-to-carrier noise of the OEO originating from the 1/f noise of the amplifier, and 3) miniaturization of the OEO. In this paper we report on progress made in these areas, and describe future plans to increase the performance and the efficiency of the OEO.

Dual-scale topology optoelectronic processor.

PubMed

Marsden, G C; Krishnamoorthy, A V; Esener, S C; Lee, S H

1991-12-15

The dual-scale topology optoelectronic processor (D-STOP) is a parallel optoelectronic architecture for matrix algebraic processing. The architecture can be used for matrix-vector multiplication and two types of vector outer product. The computations are performed electronically, which allows multiplication and summation concepts in linear algebra to be generalized to various nonlinear or symbolic operations. This generalization permits the application of D-STOP to many computational problems. The architecture uses a minimum number of optical transmitters, which thereby reduces fabrication requirements while maintaining area-efficient electronics. The necessary optical interconnections are space invariant, minimizing space-bandwidth requirements.

The relationship between past caries experience and tooth color determined by an opto-electronic method.

PubMed

Kerosuo, E; Kolehmainen, L

1982-01-01

The susceptibility of a tooth to dental caries has been proposed to depend on tooth color. So far there has, however, been no reliable method for tooth color determination. The aims of this study were to evaluate the reliability of an opto-electronic method and to examine the relationship between tooth color and past caries experience. The color of upper right central incisors of 64 school-children was determined using an opto-electronic tri-stimulus color comparator. The intra- and interexaminer reliability of the method was evaluated in vitro and in vivo being 85% and 83%, respectively. To assess the past caries experience the DMFS-index was calculated. Oral hygiene and dietary habits were also assessed. No significant difference in DMFS scores was obtained between the 'white teeth' group and the 'yellow teeth' group. The conclusion is, that the practical importance of possible colorrelated differences in caries resistance is negligible due to the multifaceted nature of dental caries.

Imaging nanoscale spatial modulation of a relativistic electron beam with a MeV ultrafast electron microscope

NASA Astrophysics Data System (ADS)

Lu, Chao; Jiang, Tao; Liu, Shengguang; Wang, Rui; Zhao, Lingrong; Zhu, Pengfei; Liu, Yaqi; Xu, Jun; Yu, Dapeng; Wan, Weishi; Zhu, Yimei; Xiang, Dao; Zhang, Jie

2018-03-01

An accelerator-based MeV ultrafast electron microscope (MUEM) has been proposed as a promising tool to the study structural dynamics at the nanometer spatial scale and the picosecond temporal scale. Here, we report experimental tests of a prototype MUEM where high quality images with nanoscale fine structures were recorded with a pulsed ˜3 MeV picosecond electron beam. The temporal and spatial resolutions of the MUEM operating in the single-shot mode are about 4 ps (FWHM) and 100 nm (FWHM), corresponding to a temporal-spatial resolution of 4 × 10-19 s m, about 2 orders of magnitude higher than that achieved with state-of-the-art single-shot keV UEM. Using this instrument, we offer the demonstration of visualizing the nanoscale periodic spatial modulation of an electron beam, which may be converted into longitudinal density modulation through emittance exchange to enable production of high-power coherent radiation at short wavelengths. Our results mark a great step towards single-shot nanometer-resolution MUEMs and compact intense x-ray sources that may have widespread applications in many areas of science.

Electron Microscopy and Analytical X-ray Characterization of Compositional and Nanoscale Structural Changes in Fossil Bone

NASA Astrophysics Data System (ADS)

Boatman, Elizabeth Marie

The nanoscale structure of compact bone contains several features that are direct indicators of bulk tissue mechanical properties. Fossil bone tissues represent unique opportunities to understand the compact bone structure/property relationships from a deep time perspective, offering a possible array of new insights into bone diseases, biomimicry of composite materials, and basic knowledge of bioapatite composition and nanoscale bone structure. To date, most work with fossil bone has employed microscale techniques and has counter-indicated the survival of bioapatite and other nanoscale structural features. The obvious disconnect between the use of microscale techniques and the discernment of nanoscale structure has prompted this work. The goal of this study was to characterize the nanoscale constituents of fossil compact bone by applying a suite of diffraction, microscopy, and spectrometry techniques, representing the highest levels of spatial and energy resolution available today, and capable of complementary structural and compositional characterization from the micro- to the nanoscale. Fossil dinosaur and crocodile long bone specimens, as well as modern ratite and crocodile femurs, were acquired from the UC Museum of Paleontology. Preserved physiological features of significance were documented with scanning electron microscopy back-scattered imaging. Electron microprobe wavelength-dispersive X-ray spectroscopy (WDS) revealed fossil bone compositions enriched in fluorine with a complementary loss of oxygen. X-ray diffraction analyses demonstrated that all specimens were composed of apatite. Transmission electron microscopy (TEM) imaging revealed preserved nanocrystallinity in the fossil bones and electron diffraction studies further identified these nanocrystallites as apatite. Tomographic analyses of nanoscale elements imaged by TEM and small angle X-ray scattering were performed, with the results of each analysis further indicating that nanoscale structure is

Sub-Poissonian light and photocurrent shot-noise suppression in closed opto-electronic loop

NASA Technical Reports Server (NTRS)

Masalov, A. V.; Putilin, A. A.; Vasilyev, Michael V.

1994-01-01

We examine experimentally photocurrent noise reduction in the opto-electronic closed loop. Photocurrent noise density 12.5 dB below the shot-noise was observed. So large suppression was not reached in previous experiments and cannot be explained in terms of an ordinary sub-Poissonian light in the loop. We propose the concept of anticorrelation state for the description of light in the loop.

Ultrasonic imaging using optoelectronic transmitters.

PubMed

Emery, C D; Casey, H C; Smith, S W

1998-04-01

Conventional ultrasound scanners utilize electronic transmitters and receivers at the scanner with a separate coaxial cable connected to each transducer element in the handle. The number of transducer elements determines the size and weight of the transducer cable assembly that connects the imaging array to the scanner. 2-D arrays that allow new imaging modalities to be introduced significantly increase the channel count making the transducer cable assembly more difficult to handle. Therefore, reducing the size and increasing the flexibility of the transducer cable assembly is a concern. Fiber optics can be used to transmit signals optically and has distinct advantages over standard coaxial cable to increase flexibility and decrease the weight of the transducer cable for larger channel numbers. The use of fiber optics to connect the array and the scanner entails the use of optoelectronics such as detectors and laser diodes to send and receive signals. In transmit, optoelectronics would have to be designed to produce high-voltage wide-bandwidth pulses across the transducer element. In this paper, we describe a 48 channel ultrasound system having 16 optoelectronic transmitters and 32 conventional electronic receivers. We investigated both silicon avalanche photodiodes (APD's) and GaAs lateral photoconductive semiconductor switches (PCSS's) for producing the transmit pulses. A Siemens SI-1200 scanner and a 2.25 MHz linear array were used to compare the optoelectronic system to a conventional electronic transmit system. Transmit signal results and images in tissue mimicking of cysts and tumors are provided for comparison.

Oxide semiconductors for organic opto-electronic devices

NASA Astrophysics Data System (ADS)

Sigdel, Ajaya K.

In this dissertation, I have introduced various concepts on the modulations of various surface, interface and bulk opto-electronic properties of ZnO based semiconductor for charge transport, charge selectivity and optimal device performance. I have categorized transparent semiconductors into two sub groups depending upon their role in a device. Electrodes, usually 200 to 500 nm thick, optimized for good transparency and transporting the charges to the external circuit. Here, the electrical conductivity in parallel direction to thin film, i.e bulk conductivity is important. And contacts, usually 5 to 50 nm thick, are optimized in case of solar cells for providing charge selectivity and asymmetry to manipulate the built in field inside the device for charge separation and collection. Whereas in Organic LEDs (OLEDs), contacts provide optimum energy level alignment at organic oxide interface for improved charge injections. For an optimal solar cell performance, transparent electrodes are designed with maximum transparency in the region of interest to maximize the light to pass through to the absorber layer for photo-generation, plus they are designed for minimum sheet resistance for efficient charge collection and transport. As such there is need for material with high conductivity and transparency. Doping ZnO with some common elements such as B, Al, Ga, In, Ge, Si, and F result in n-type doping with increase in carriers resulting in high conductivity electrode, with better or comparable opto-electronic properties compared to current industry-standard indium tin oxide (ITO). Furthermore, improvement in mobility due to improvement on crystallographic structure also provide alternative path for high conductivity ZnO TCOs. Implementing these two aspects, various studies were done on gallium doped zinc oxide (GZO) transparent electrode, a very promising indium free electrode. The dynamics of the superimposed RF and DC power sputtering was utilized to improve the

Achromatic elemental mapping beyond the nanoscale in the transmission electron microscope.

PubMed

Urban, K W; Mayer, J; Jinschek, J R; Neish, M J; Lugg, N R; Allen, L J

2013-05-03

Newly developed achromatic electron optics allows the use of wide energy windows and makes feasible energy-filtered transmission electron microscopy (EFTEM) at atomic resolution. In this Letter we present EFTEM images formed using electrons that have undergone a silicon L(2,3) core-shell energy loss, exhibiting a resolution in EFTEM of 1.35 Å. This permits elemental mapping beyond the nanoscale provided that quantum mechanical calculations from first principles are done in tandem with the experiment to understand the physical information encoded in the images.

Optoelectronic Devices and Materials

NASA Astrophysics Data System (ADS)

Sweeney, Stephen; Adams, Alfred

Unlike the majority of electronic devices, which are silicon based, optoelectronic devices are predominantly made using III-V semiconductor compounds such as GaAs, InP, GaN and GaSb and their alloys due to their direct band gap. Understanding the properties of these materials has been of vital importance in the development of optoelectronic devices. Since the first demonstration of a semiconductor laser in the early 1960s, optoelectronic devices have been produced in their millions, pervading our everyday lives in communications, computing, entertainment, lighting and medicine. It is perhaps their use in optical-fibre communications that has had the greatest impact on humankind, enabling high-quality and inexpensive voice and data transmission across the globe. Optical communications spawned a number of developments in optoelectronics, leading to devices such as vertical-cavity surface-emitting lasers, semiconductor optical amplifiers, optical modulators and avalanche photodiodes. In this chapter we discuss the underlying theory of operation of the most important optoelectronic devices. The influence of carrier-photon interactions is discussed in the context of producing efficient emitters and detectors. Finally we discuss how the semiconductor band structure can be manipulated to enhance device properties using quantum confinement and strain effects, and how the addition of dilute amounts of elements such as nitrogen is having a profound effect on the next generation of optoelectronic devices.

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

NASA Astrophysics Data System (ADS)

Biyikli, Necmi; Haider, Ali

2017-09-01

In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

Experimental Study of Electron and Phonon Dynamics in Nanoscale Materials by Ultrafast Laser Time-Domain Spectroscopy

NASA Astrophysics Data System (ADS)

Shen, Xiaohan

With the rapid advances in the development of nanotechnology, nowadays, the sizes of elementary unit, i.e. transistor, of micro- and nanoelectronic devices are well deep into nanoscale. For the pursuit of cheaper and faster nanoscale electronic devices, the size of transistors keeps scaling down. As the miniaturization of the nanoelectronic devices, the electrical resistivity increases dramatically, resulting rapid growth in the heat generation. The heat generation and limited thermal dissipation in nanoscale materials have become a critical problem in the development of the next generation nanoelectronic devices. Copper (Cu) is widely used conducting material in nanoelectronic devices, and the electron-phonon scattering is the dominant contributor to the resistivity in Cu nanowires at room temperature. Meanwhile, phonons are the main carriers of heat in insulators, intrinsic and lightly doped semiconductors. The thermal transport is an ensemble of phonon transport, which strongly depends on the phonon frequency. In addition, the phonon transport in nanoscale materials can behave fundamentally different than in bulk materials, because of the spatial confinement. However, the size effect on electron-phonon scattering and frequency dependent phonon transport in nanoscale materials remain largely unexplored, due to the lack of suitable experimental techniques. This thesis is mainly focusing on the study of carrier dynamics and acoustic phonon transport in nanoscale materials. The weak photothermal interaction in Cu makes thermoreflectance measurement difficult, we rather measured the reflectivity change of Cu induced by absorption variation. We have developed a method to separately measure the processes of electron-electron scattering and electron-phonon scattering in epitaxial Cu films by monitoring the transient reflectivity signal using the resonant probe with particular wavelengths. The enhancement on electron-phonon scattering in epitaxial Cu films with thickness

Novel BTlGaN semiconducting materials for infrared opto-electronic devices

NASA Astrophysics Data System (ADS)

Assali, Abdenacer; Bouslama, M'hamed

2017-03-01

BTlGaN quaternary alloys are proposed as new semiconductor materials for infrared opto-electronic applications. The structural and opto-electronic properties of zinc blende BxTlyGa1-x-yN alloys lattice matched to GaN with (0 ⩽ x and y ⩽ 0.187) are studied using density functional theory (DFT) within full-potential linearized augmented plane wave (FP-LAPW) method. The calculated structural parameters such as lattice constant a0 and bulk modulus B0 are found to be in good agreement with experimental data using the new form of generalized gradient approximation (GGA-WC). The band gaps of the compounds are also found very close to the experimental results using the recently developed Tran-Blaha-modified Becke-Johnson (TB-mBJ) exchange potential. A quaternary BxTlyGa1-x-yN is expected to be lattice matched to the GaN substrate with concentrations x = 0.125 and y = 0.187 allows to produce high interface layers quality. It has been found that B incorporation into BTlGaN does not significantly affect the band gap, while the addition of dilute Tl content leads to induce a strong reduction of the band gap, which in turn increases the emission wavelengths to the infrared region. The refractivity, reflectivity and absorption coefficient of these alloys were investigated. BTlGaN/GaN is an interesting new material to be used as active layer/barriers in quantum wells suitable for realizing advanced Laser Diodes and Light-Emitting Diodes as new sources of light emitting in the infrared spectrum region.

Imaging nanoscale spatial modulation of a relativistic electron beam with a MeV ultrafast electron microscope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Chao; Jiang, Tao; Liu, Shengguang

Here, an accelerator-based MeV ultrafast electron microscope (MUEM) has been proposed as a promising tool to the study structural dynamics at the nanometer spatial scale and the picosecond temporal scale. Here, we report experimental tests of a prototype MUEM where high quality images with nanoscale fine structures were recorded with a pulsed ~3 MeV picosecond electron beam. The temporal and spatial resolutions of the MUEM operating in the single-shot mode are about 4 ps (FWHM) and 100 nm (FWHM), corresponding to a temporal-spatial resolution of 4 × 10 –19 sm, about 2 orders of magnitude higher than that achieved withmore » state-of-the-art single-shot keV UEM. Using this instrument, we offer the demonstration of visualizing the nanoscale periodic spatial modulation of an electron beam, which may be converted into longitudinal density modulation through emittance exchange to enable production of high-power coherent radiation at short wavelengths. Our results mark a great step towards single-shot nanometer-resolution MUEMs and compact intense x-ray sources that may have widespread applications in many areas of science.« less

Imaging nanoscale spatial modulation of a relativistic electron beam with a MeV ultrafast electron microscope

DOE PAGES

Lu, Chao; Jiang, Tao; Liu, Shengguang; ...

2018-03-12

Here, an accelerator-based MeV ultrafast electron microscope (MUEM) has been proposed as a promising tool to the study structural dynamics at the nanometer spatial scale and the picosecond temporal scale. Here, we report experimental tests of a prototype MUEM where high quality images with nanoscale fine structures were recorded with a pulsed ~3 MeV picosecond electron beam. The temporal and spatial resolutions of the MUEM operating in the single-shot mode are about 4 ps (FWHM) and 100 nm (FWHM), corresponding to a temporal-spatial resolution of 4 × 10 –19 sm, about 2 orders of magnitude higher than that achieved withmore » state-of-the-art single-shot keV UEM. Using this instrument, we offer the demonstration of visualizing the nanoscale periodic spatial modulation of an electron beam, which may be converted into longitudinal density modulation through emittance exchange to enable production of high-power coherent radiation at short wavelengths. Our results mark a great step towards single-shot nanometer-resolution MUEMs and compact intense x-ray sources that may have widespread applications in many areas of science.« less

Exploitation of molecular mobilities for advanced organic optoelectronic and photonic nano-materials

NASA Astrophysics Data System (ADS)

Gray, Tomoko O.

Electro-optically active organic materials have shown great potential in advanced technologies such as ultrafast electro-optical switches for broadband communication, light-emitting diodes, and photovoltaic cells. Currently, the maturity of chemical synthesis enables a sophisticated integration of the active elements into complex macromolecules. Also, the structure-property relationships of the isolated single electrically/optically active elements are well established. Unfortunately, such correlations involving single molecule are not applicable to complex unstructured condensed systems, in which unique mesoscale properties and complex dynamics of super-/supra-molecular structures are present. Our current challenge arises, in particular, from a deficiency of appropriate characterization tools that close the gap between phenomenological measurements and theoretical models. This work addresses submolecular mobilities relevant for opto-electronic functionalities of photoluminescent polymers and non-linear optical (NLO) materials. Thereby, I will introduce novel nanoscale thermomechanical characterization tools that are based on scanning force microscopy. From nanoscale thermomechanical measurements sub-/super-molecular mobilities of novel optoelectronic materials can be inferred and to some degree controlled. For instance, we have explored interfacial constraints as a engineering tool to control molecular mobility. This will be illustrated with electroluminescent polymers, which are prone to undesired pi-pi aggregation due to the rod-like structure---intrinsic to all conjugated polymers. The nanoscale confinement is used to reduced chain mobility, and thus, hinders undesired aggregation, and consequently, yields superior spectral stability. From the nanomaterial design perspective, I will also address mobility control with targeted molecular designs. This involves two classes of novel NLO materials, side-chain dendronized polymers and self-assembling molecular

Development of solution-processed nanowire composites for opto-electronics

DOE PAGES

Ginley, David S.; Aggarwal, Shruti; Singh, Rajiv; ...

2016-12-20

Here, silver nanowire-based contacts represent one of the major new directions in transparent contacts for opto-electronic devices with the added advantage that they can have Indium-Tin-Oxide-like properties at substantially reduced processing temperatures and without the use of vacuum-based processing. However, nanowires alone often do not adhere well to the substrate or other film interfaces; even after a relatively high-temperature anneal and unencapsulated nanowires show environmental degradation at high temperature and humidity. Here we report on the development of ZnO/Ag-nanowire composites that have sheet resistance below 10 Ω/sq and >90% transmittance from a solution-based process with process temperatures below 200 °C.more » These films have significant applications potential in photovoltaics and displays.« less

Molecular optoelectronics: the interaction of molecular conduction junctions with light.

PubMed

Galperin, Michael; Nitzan, Abraham

2012-07-14

The interaction of light with molecular conduction junctions is attracting growing interest as a challenging experimental and theoretical problem on one hand, and because of its potential application as a characterization and control tool on the other. It stands at the interface between two important fields, molecular electronics and molecular plasmonics and has attracted attention as a challenging scientific problem with potentially important technological consequences. Here we review the present state of the art of this field, focusing on several key phenomena and applications: using light as a switching device, using light to control junction transport in the adiabatic and non-adiabatic regimes, light generation in biased junctions and Raman scattering from such systems. This field has seen remarkable progress in the past decade, and the growing availability of scanning tip configurations that can combine optical and electrical probes suggests that further progress towards the goal of realizing molecular optoelectronics on the nanoscale is imminent.

Electronic and optoelectronic device applications based on ReS2

NASA Astrophysics Data System (ADS)

Liu, Erfu; Long, Mingsheng; Wang, Yaojia; Pan, Yiming; Ho, Chinghwa; Wang, Baigeng; Miao, Feng

Rhenium disulfide (ReS2) is a unique semiconducting TMD with distorted 1T structure and weak interlayer coupling. We have previously investigated its in-plane anisotropic property and electronic applications on FET and digital inverters. In this talk, we will present high responsivity phototransistors based on few-layer ReS2. Depending on the back gate voltage, source drain bias and incident optical light intensity, the maximum attainable photoresponsivity can reach as high as 88,600 A W-1, which is one of the highest value among individual two-dimensional materials with similar device structures. Such high photoresponsivity is attributed to the increased light absorption as well as the gain enhancement due to the existence of trap states in the few-layer ReS2 flakes. The existence of trap states is proved by temperature dependent transport measurements. It further enables the detection of weak signals. Our studies underscore ReS2 as a promising material for future electronic and sensitive optoelectronic applications.

Phase aggregation and morphology effects on nanocarbon optoelectronics.

PubMed

Xie, Yu; Lohrman, Jessica; Ren, Shenqiang

2014-12-05

Controllable morphology and interfacial interactions within bulk heterojunction nanostructures show significant effects on optoelectronic device applications. In this study, a nanocarbon heterojunction, consisting of single-walled carbon nanotubes (s-SWCNTs) and fullerene derivatives, is reported by assembling/blending its structures through solution-based processes. A uniform and dense graphene oxide hole transport layer is used to facilitate the photoconversion at a near infrared (NIR) wavelength. Effective interfacial interaction between the s-SWCNTs and fullerene is suggested by the redshifted photoabsorption and nanoscale/micron-scale fluorescence, which is associated with self-assembled nanocarbon morphology.

Temperature Measurement by a Nanoscale Electron Probe Using Energy Gain and Loss Spectroscopy

NASA Astrophysics Data System (ADS)

Idrobo, Juan Carlos; Lupini, Andrew R.; Feng, Tianli; Unocic, Raymond R.; Walden, Franklin S.; Gardiner, Daniel S.; Lovejoy, Tracy C.; Dellby, Niklas; Pantelides, Sokrates T.; Krivanek, Ondrej L.

2018-03-01

Heat dissipation in integrated nanoscale devices is a major issue that requires the development of nanoscale temperature probes. Here, we report the implementation of a method that combines electron energy gain and loss spectroscopy to provide a direct measurement of the local temperature in the nanoenvironment. Loss and gain peaks corresponding to an optical-phonon mode in boron nitride were measured from room temperature to ˜1600 K . Both loss and gain peaks exhibit a shift towards lower energies as the sample is heated up. First-principles calculations of the temperature-induced phonon frequency shifts provide insights into the origin of this effect and confirm the experimental data. The experiments and theory presented here open the doors to the study of anharmonic effects in materials by directly probing phonons in the electron microscope.

Gallium Arsenide Monolithic Optoelectronic Circuits

NASA Astrophysics Data System (ADS)

Bar-Chaim, N.; Katz, J.; Margalit, S.; Ury, I.; Wilt, D.; Yariv, A.

1981-07-01

The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which allow the fabrication of high speed electronic devices which are superior to conventional silicon devices. Monolithic optoelectronic circuits are formed by the integration of optical and electronic devices on a single GaAs substrate. Integration of many devices is most easily accomplished on a semi-insulating (SI) sub-strate. Several laser structures have been fabricated on SI GaAs substrates. Some of these lasers have been integrated with Gunn diodes and with metal semiconductor field effect transistors (MESFETs). An integrated optical repeater has been demonstrated in which MESFETs are used for optical detection and electronic amplification, and a laser is used to regenerate the optical signal. Monolithic optoelectronic circuits have also been constructed on conducting substrates. A heterojunction bipolar transistor driver has been integrated with a laser on an n-type GaAs substrate.

Design and Synthesis of Novel Block Copolymers for Efficient Opto-Electronic Applications

NASA Technical Reports Server (NTRS)

Sun, Sam-Shajing; Fan, Zhen; Wang, Yiqing; Taft, Charles; Haliburton, James; Maaref, Shahin

2002-01-01

It has been predicted that nano-phase separated block copolymer systems containing electron rich donor blocks and electron deficient acceptor blocks may facilitate the charge carrier separation and migration in organic photovoltaic devices due to improved morphology in comparison to polymer blend system. This paper presents preliminary data describing the design and synthesis of a novel Donor-Bridge-Acceptor (D-B-A) block copolymer system for potential high efficient organic optoelectronic applications. Specifically, the donor block contains an electron donating alkyloxy derivatized polyphenylenevinylene (PPV), the acceptor block contains an electron withdrawing alkyl-sulfone derivatized polyphenylenevinylene (PPV), and the bridge block contains an electronically neutral non-conjugated aliphatic hydrocarbon chain. The key synthetic strategy includes the synthesis of each individual block first, then couple the blocks together. While the donor block stabilizes and facilitates the transport of the holes, the acceptor block stabilizes and facilitates the transport of the electrons, the bridge block is designed to hinder the probability of electron-hole recombination. Thus, improved charge separation and stability are expected with this system. In addition, charge migration toward electrodes may also be facilitated due to the potential nano-phase separated and highly ordered block copolymer ultra-structure.

Optoelectronic Integration

DTIC Science & Technology

1992-03-20

34 Interband Transitions in InGaAs/GaAs Strained Layer Superlattices ," J. of Vac. Sci and Technol. B, Vol. 7(5), pp. 1106-1110, 1989. 33 B. Kh...2 II. C. Resonant Cavity-Enhanced Photodetectors ................................ .............. 3 II. D. Wavelength Selective Optoelectronic...Simultions of Electronic States in Semiconductor Quantum Wells and Superlattices under Electrical Field ................................ ....... 5 II. G . G

Dominance of broken bonds and nonbonding electrons at the nanoscale

NASA Astrophysics Data System (ADS)

Sun, Chang Q.

2010-10-01

Although they exist ubiquitously in human bodies and our surroundings, the impact of nonbonding lone electrons and lone electron pairs has long been underestimated. Recent progress demonstrates that: (i) in addition to the shorter and stronger bonds between under-coordinated atoms that initiate the size trends of the otherwise constant bulk properties when a substance turns into the nanoscale, the presence of lone electrons near to broken bonds generates fascinating phenomena that bulk materials do not demonstrate; (ii) the lone electron pairs and the lone pair-induced dipoles associated with C, N, O, and F tetrahedral coordination bonding form functional groups in biological, organic, and inorganic specimens. By taking examples of surface vacancy, atomic chain end and terrace edge states, catalytic enhancement, conducting-insulating transitions of metal clusters, defect magnetism, Coulomb repulsion at nanoscale contacts, Cu3C2H2 and Cu3O2 surface dipole formation, lone pair neutralized interface stress, etc, this article will focus on the development and applications of theory regarding the energetics and dynamics of nonbonding electrons, aiming to raise the awareness of their revolutionary impact to the society. Discussion will also extend to the prospective impacts of nonbonding electrons on mysteries such as catalytic enhancement and catalysts design, the density anomalies of ice and negative thermal expansion, high critical temperature superconductivity induced by B, C, N, O, and F, the molecular structures and functionalities of CF4 in anti-coagulation of synthetic blood, NO signaling, and enzyme telomeres, etc. Meanwhile, an emphasis is placed on the necessity and effectiveness of understanding the properties of substances from the perspective of bond and nonbond formation, dissociation, relaxation and vibration, and the associated energetics and dynamics of charge repopulation, polarization, densification, and localization. Finding and grasping the factors

Optoelectronic interconnects for 3D wafer stacks

NASA Astrophysics Data System (ADS)

Ludwig, David E.; Carson, John C.; Lome, Louis S.

1996-01-01

Wafer and chip stacking are envisioned as a means of providing increased processing power within the small confines of a three-dimensional structure. Optoelectronic devices can play an important role in these dense 3-D processing electronic packages in two ways. In pure electronic processing, optoelectronics can provide a method for increasing the number of input/output communication channels within the layers of the 3-D chip stack. Non-free space communication links allow the density of highly parallel input/output ports to increase dramatically over typical edge bus connections. In hybrid processors, where electronics and optics play a role in defining the computational algorithm, free space communication links are typically utilized for, among other reasons, the increased network link complexity which can be achieved. Free space optical interconnections provide bandwidths and interconnection complexity unobtainable in pure electrical interconnections. Stacked 3-D architectures can provide the electronics real estate and structure to deal with the increased bandwidth and global information provided by free space optical communications. This paper provides definitions and examples of 3-D stacked architectures in optoelectronics processors. The benefits and issues of these technologies are discussed.

Optoelectronic interconnects for 3D wafer stacks

NASA Astrophysics Data System (ADS)

Ludwig, David; Carson, John C.; Lome, Louis S.

1996-01-01

Wafer and chip stacking are envisioned as means of providing increased processing power within the small confines of a three-dimensional structure. Optoelectronic devices can play an important role in these dense 3-D processing electronic packages in two ways. In pure electronic processing, optoelectronics can provide a method for increasing the number of input/output communication channels within the layers of the 3-D chip stack. Non-free space communication links allow the density of highly parallel input/output ports to increase dramatically over typical edge bus connections. In hybrid processors, where electronics and optics play a role in defining the computational algorithm, free space communication links are typically utilized for, among other reasons, the increased network link complexity which can be achieved. Free space optical interconnections provide bandwidths and interconnection complexity unobtainable in pure electrical interconnections. Stacked 3-D architectures can provide the electronics real estate and structure to deal with the increased bandwidth and global information provided by free space optical communications. This paper will provide definitions and examples of 3-D stacked architectures in optoelectronics processors. The benefits and issues of these technologies will be discussed.

Nanostructure and optoelectronic phenomena in germanium-transparent conductive oxide (Ge:TCO) composites

NASA Astrophysics Data System (ADS)

Shih, Grace Hwei-Pyng

Nanostructured composites are attracting intense interest for electronic and optoelectronic device applications, specifically as active elements in thin film photovoltaic (PV) device architectures. These systems implement fundamentally different concepts of enhancing energy conversion efficiencies compared to those seen in current commercial devices. This is possible through considerable flexibility in the manipulation of device-relevant properties through control of the interplay between the nanostructure and the optoelectronic response. In the present work, inorganic nanocomposites of semiconductor Ge embedded in transparent conductive indium tin oxide (ITO) as well as Ge in zinc oxide (ZnO) were produced by a single step RF-magnetron sputter deposition process. It is shown that, by controlling the design of the nanocomposites as well as heat treatment conditions, decreases in the physical dimensions of Ge nanophase size provided an effective tuning of the optical absorption and charge transport properties. This effect of changes in the optical properties of nanophase semiconductors with respect to size is known as the quantum confinement effect. Variation in the embedding matrix material between ITO and ZnO with corresponding characterization of optoelectronic properties exhibit notable differences in the presence and evolution of an interfacial oxide within these composites. Further studies of interfacial structures were performed using depth-profiling XPS and Raman spectroscopy, while study of the corresponding electronic effects were performed using room temperature and temperature-dependent Hall Effect. Optical absorption was noted to shift to higher onset energies upon heat treatment with a decrease in the observed Ge domain size, indicating quantum confinement effects within these systems. This contrasts to previous investigations that have involved the introduction of nanoscale Ge into insulating, amorphous oxides. Comparison of these different matrix

Growth and nanomechanical characterization of nanoscale 3D architectures grown via focused electron beam induced deposition

DOE PAGES

Lewis, Brett B.; Mound, Brittnee A.; Srijanto, Bernadeta; ...

2017-10-12

Here, nanomechanical measurements of platinum–carbon 3D nanoscale architectures grown via focused electron beam induced deposition (FEBID) were performed using a nanoindentation system in a scanning electron microscope (SEM) for simultaneous in situ imaging.

Electron-stimulated reactions in nanoscale water films adsorbed on α-Al 2 O 3 (0001)

DOE PAGES

Petrik, Nikolay G.; Kimmel, Greg A.

2018-01-01

100 eV electrons are stopped in the H 2 O portion of the isotopically-layered nanoscale film on α-Al 2 O 3 (0001) but D 2 is produced at the D 2 O/alumina interface by mobile electronic excitations and/or hydronium ions.

Nanoscale probing of electron-regulated structural transitions in silk proteins by near-field IR imaging and nano-spectroscopy

PubMed Central

Qin, Nan; Zhang, Shaoqing; Jiang, Jianjuan; Corder, Stephanie Gilbert; Qian, Zhigang; Zhou, Zhitao; Lee, Woonsoo; Liu, Keyin; Wang, Xiaohan; Li, Xinxin; Shi, Zhifeng; Mao, Ying; Bechtel, Hans A.; Martin, Michael C.; Xia, Xiaoxia; Marelli, Benedetto; Kaplan, David L.; Omenetto, Fiorenzo G.; Liu, Mengkun; Tao, Tiger H.

2016-01-01

Silk protein fibres produced by silkworms and spiders are renowned for their unparalleled mechanical strength and extensibility arising from their high-β-sheet crystal contents as natural materials. Investigation of β-sheet-oriented conformational transitions in silk proteins at the nanoscale remains a challenge using conventional imaging techniques given their limitations in chemical sensitivity or limited spatial resolution. Here, we report on electron-regulated nanoscale polymorphic transitions in silk proteins revealed by near-field infrared imaging and nano-spectroscopy at resolutions approaching the molecular level. The ability to locally probe nanoscale protein structural transitions combined with nanometre-precision electron-beam lithography offers us the capability to finely control the structure of silk proteins in two and three dimensions. Our work paves the way for unlocking essential nanoscopic protein structures and critical conditions for electron-induced conformational transitions, offering new rules to design protein-based nanoarchitectures. PMID:27713412

Atomic Clock Based on Opto-Electronic Oscillator

NASA Technical Reports Server (NTRS)

Maleki, Lute; Yu, Nan

2005-01-01

A proposed highly accurate clock or oscillator would be based on the concept of an opto-electronic oscillator (OEO) stabilized to an atomic transition. Opto-electronic oscillators, which have been described in a number of prior NASA Tech Briefs articles, generate signals at frequencies in the gigahertz range characterized by high spectral purity but not by longterm stability or accuracy. On the other hand, the signals generated by previously developed atomic clocks are characterized by long-term stability and accuracy but not by spectral purity. The proposed atomic clock would provide high spectral purity plus long-term stability and accuracy a combination of characteristics needed to realize advanced developments in communications and navigation. In addition, it should be possible to miniaturize the proposed atomic clock. When a laser beam is modulated by a microwave signal and applied to a photodetector, the electrical output of the photodetector includes a component at the microwave frequency. In atomic clocks of a type known as Raman clocks or coherent-population-trapping (CPT) clocks, microwave outputs are obtained from laser beams modulated, in each case, to create two sidebands that differ in frequency by the amount of a hyperfine transition in the ground state of atoms of an element in vapor form in a cell. The combination of these sidebands produces a transparency in the population of a higher electronic level that can be reached from either of the two ground-state hyperfine levels by absorption of a photon. The beam is transmitted through the vapor to a photodetector. The components of light scattered or transmitted by the atoms in the two hyperfine levels mix in the photodetector and thereby give rise to a signal at the hyperfine- transition frequency. The proposed atomic clock would include an OEO and a rubidium- or cesium- vapor cell operating in the CPT/Raman regime (see figure). In the OEO portion of this atomic clock, as in a typical prior OEO, a

Recent Developments of an Opto-Electronic THz Spectrometer for High-Resolution Spectroscopy

PubMed Central

Hindle, Francis; Yang, Chun; Mouret, Gael; Cuisset, Arnaud; Bocquet, Robin; Lampin, Jean-François; Blary, Karine; Peytavit, Emilien; Akalin, Tahsin; Ducournau, Guillaume

2009-01-01

A review is provided of sources and detectors that can be employed in the THz range before the description of an opto-electronic source of monochromatic THz radiation. The realized spectrometer has been applied to gas phase spectroscopy. Air-broadening coefficients of HCN are determined and the insensitivity of this technique to aerosols is demonstrated by the analysis of cigarette smoke. A multiple pass sample cell has been used to obtain a sensitivity improvement allowing transitions of the volatile organic compounds to be observed. A solution to the frequency metrology is presented and promises to yield accurate molecular line center measurements. PMID:22291552

2D Organic Materials for Optoelectronic Applications.

PubMed

Yang, Fangxu; Cheng, Shanshan; Zhang, Xiaotao; Ren, Xiaochen; Li, Rongjin; Dong, Huanli; Hu, Wenping

2018-01-01

The remarkable merits of 2D materials with atomically thin structures and optoelectronic attributes have inspired great interest in integrating 2D materials into electronics and optoelectronics. Moreover, as an emerging field in the 2D-materials family, assembly of organic nanostructures into 2D forms offers the advantages of molecular diversity, intrinsic flexibility, ease of processing, light weight, and so on, providing an exciting prospect for optoelectronic applications. Herein, the applications of organic 2D materials for optoelectronic devices are a main focus. Material examples include 2D, organic, crystalline, small molecules, polymers, self-assembly monolayers, and covalent organic frameworks. The protocols for 2D-organic-crystal-fabrication and -patterning techniques are briefly discussed, then applications in optoelectronic devices are introduced in detail. Overall, an introduction to what is known and suggestions for the potential of many exciting developments are presented. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Use of Opto-Electronics in Viscometry.

ERIC Educational Resources Information Center

Mazza, R. J.; Washbourn, D. H.

1982-01-01

Describes a semi-automatic viscometer which incorporates a microprocessor system and uses optoelectronics to detect flow of liquid through the capillary, flow time being displayed on a timer with accuracy of 0.01 second. The system could be made fully automatic with an additional microprocessor circuit and inclusion of a pump. (Author/JN)

Semiconducting Nanocrystals in Mesostructured Thin Films for Optical and Opto-Electronic Device Applications

DTIC Science & Technology

2007-03-01

with HF in methanol. For example, for 4.5 nm In0.91Ga0.09P nanoparticles in toluene, there is a dramatic increase in PL quantum efficiency from 8...opto-electronic device applications, for which quantum efficiencies above 50% are typically required for commercial cost-effectiveness. For the...InGaP nanocrystals……… 14 Figure 4: 2D double- quantum 31P NMR spectrum, 4.5 nm InGaP nanocrystals………….…… 15 Figure 5: TEM of of 10 nm, 5 nm

Quantification of nanoscale density fluctuations by electron microscopy: probing cellular alterations in early carcinogenesis

NASA Astrophysics Data System (ADS)

Pradhan, Prabhakar; Damania, Dhwanil; Joshi, Hrushikesh M.; Turzhitsky, Vladimir; Subramanian, Hariharan; Roy, Hemant K.; Taflove, Allen; Dravid, Vinayak P.; Backman, Vadim

2011-04-01

Most cancers are curable if they are diagnosed and treated at an early stage. Recent studies suggest that nanoarchitectural changes occur within cells during early carcinogenesis and that such changes precede microscopically evident tissue alterations. It follows that the ability to comprehensively interrogate cell nanoarchitecture (e.g., macromolecular complexes, DNA, RNA, proteins and lipid membranes) could be critical to the diagnosis of early carcinogenesis. We present a study of the nanoscale mass-density fluctuations of biological tissues by quantifying their degree of disorder at the nanoscale. Transmission electron microscopy images of human tissues are used to construct corresponding effective disordered optical lattices. The properties of nanoscale disorder are then studied by statistical analysis of the inverse participation ratio (IPR) of the spatially localized eigenfunctions of these optical lattices at the nanoscale. Our results show an increase in the disorder of human colonic epithelial cells in subjects harboring early stages of colon neoplasia. Furthermore, our findings strongly suggest that increased nanoscale disorder correlates with the degree of tumorigenicity. Therefore, the IPR technique provides a practicable tool for the detection of nanoarchitectural alterations in the earliest stages of carcinogenesis. Potential applications of the technique for early cancer screening and detection are also discussed. Originally submitted for the special focus issue on physical oncology.

Monolithically integrated bacteriorhodopsin/semiconductor opto-electronic integrated circuit for a bio-photoreceiver.

PubMed

Xu, J; Bhattacharya, P; Váró, G

2004-03-15

The light-sensitive protein, bacteriorhodopsin (BR), is monolithically integrated with an InP-based amplifier circuit to realize a novel opto-electronic integrated circuit (OEIC) which performs as a high-speed photoreceiver. The circuit is realized by epitaxial growth of the field-effect transistors, currently used semiconductor device and circuit fabrication techniques, and selective area BR electro-deposition. The integrated photoreceiver has a responsivity of 175 V/W and linear photoresponse, with a dynamic range of 16 dB, with 594 nm photoexcitation. The dynamics of the photochemical cycle of BR has also been modeled and a proposed equivalent circuit simulates the measured BR photoresponse with good agreement.

10 GHz dual loop opto-electronic oscillator without RF-amplifiers

NASA Astrophysics Data System (ADS)

Zhou, Weimin; Okusaga, Olukayode; Nelson, Craig; Howe, David; Carter, Gary

2008-02-01

We report the first demonstration of a 10 GHz dual-fiber-loop Opto-Electronic Oscillator (OEO) without RF-amplifiers. Using a recently developed highly efficient RF-Photonic link with RF-to-RF gain facilitated by a high power laser, highly efficient optical modulator and high power phototectectors, we have built an amplifier-less OEO that eliminates the phase noise produced by the electronic amplifier. The dual-loop approach can provide additional gain and reduce unwanted multi-mode spurs. However, we have observed RF phase noise produced by the high power laser include relative intensity noise (RIN) and noise related to the laser's electronic control system. In addition, stimulated Brillouin scattering limits the fiber loop's length to ~2km at the 40mW laser power needed to provide the RF gain which limits the system's quality factor, Q. We have investigated several different methods for solving these problems. One promising technique is the use of a multi-longitudinal-mode laser to carry the RF signal, maintaining the total optical power but reducing the optical power of each mode to eliminate the Brillouin scattering in a longer fiber thereby reducing the phase noise of the RF signal produced by the OEO. This work shows that improvement in photonic components increases the potential for more RF system applications such as an OEO's with higher performance and new capabilities.

Multi-paradigm simulation at nanoscale: Methodology and application to functional carbon material

NASA Astrophysics Data System (ADS)

Su, Haibin

2012-12-01

Multiparadigm methods to span the scales from quantum mechanics to practical issues of functional nanoassembly and nanofabrication are enabling first principles predictions to guide and complement the experimental developments by designing and optimizing computationally the materials compositions and structures to assemble nanoscale systems with the requisite properties. In this talk, we employ multi-paradigm approaches to investigate functional carbon materials with versatile character, including fullerene, carbon nanotube (CNT), graphene, and related hybrid structures, which have already created an enormous impact on next generation nano devices. The topics will cover the reaction dynamics of C60 dimerization and the more challenging complex tubular fullerene formation process in the peapod structures; the computational design of a new generation of peapod nano-oscillators, the predicted magnetic state in Nano Buds; opto-electronic properties of graphene nanoribbons; and disorder / vibronic effects on transport in carbonrich materials.

Quantum many-body theory for electron spin decoherence in nanoscale nuclear spin baths.

PubMed

Yang, Wen; Ma, Wen-Long; Liu, Ren-Bao

2017-01-01

Decoherence of electron spins in nanoscale systems is important to quantum technologies such as quantum information processing and magnetometry. It is also an ideal model problem for studying the crossover between quantum and classical phenomena. At low temperatures or in light-element materials where the spin-orbit coupling is weak, the phonon scattering in nanostructures is less important and the fluctuations of nuclear spins become the dominant decoherence mechanism for electron spins. Since the 1950s, semi-classical noise theories have been developed for understanding electron spin decoherence. In spin-based solid-state quantum technologies, the relevant systems are in the nanometer scale and nuclear spin baths are quantum objects which require a quantum description. Recently, quantum pictures have been established to understand the decoherence and quantum many-body theories have been developed to quantitatively describe this phenomenon. Anomalous quantum effects have been predicted and some have been experimentally confirmed. A systematically truncated cluster-correlation expansion theory has been developed to account for the many-body correlations in nanoscale nuclear spin baths that are built up during electron spin decoherence. The theory has successfully predicted and explained a number of experimental results in a wide range of physical systems. In this review, we will cover this recent progress. The limitations of the present quantum many-body theories and possible directions for future development will also be discussed.

Dynamic Photorefractive Memory and its Application for Opto-Electronic Neural Networks.

NASA Astrophysics Data System (ADS)

Sasaki, Hironori

This dissertation describes the analysis of the photorefractive crystal dynamics and its application for opto-electronic neural network systems. The realization of the dynamic photorefractive memory is investigated in terms of the following aspects: fast memory update, uniform grating multiplexing schedules and the prevention of the partial erasure of existing gratings. The fast memory update is realized by the selective erasure process that superimposes a new grating on the original one with an appropriate phase shift. The dynamics of the selective erasure process is analyzed using the first-order photorefractive material equations and experimentally confirmed. The effects of beam coupling and fringe bending on the selective erasure dynamics are also analyzed by numerically solving a combination of coupled wave equations and the photorefractive material equation. Incremental recording technique is proposed as a uniform grating multiplexing schedule and compared with the conventional scheduled recording technique in terms of phase distribution in the presence of an external dc electric field, as well as the image gray scale dependence. The theoretical analysis and experimental results proved the superiority of the incremental recording technique over the scheduled recording. Novel recirculating information memory architecture is proposed and experimentally demonstrated to prevent partial degradation of the existing gratings by accessing the memory. Gratings are circulated through a memory feed back loop based on the incremental recording dynamics and demonstrate robust read/write/erase capabilities. The dynamic photorefractive memory is applied to opto-electronic neural network systems. Module architecture based on the page-oriented dynamic photorefractive memory is proposed. This module architecture can implement two complementary interconnection organizations, fan-in and fan-out. The module system scalability and the learning capabilities are theoretically

Tuning a Schottky Barrier in a Photoexcited Topological Insulator with Transient Dirac Cone Electron-Hole Asymmetry

DTIC Science & Technology

2014-01-06

S. Jia9, H.W. Ji9, R.J. Cava9 & M. Marsi1 The advent of Dirac materials has made it possible to realize two-dimensional gases of relativistic...ultrafast light pulses a relativistic nanoscale Schottky barrier, in a way that is impossible with conventional optoelectronic materials . DOI : 10.1038...topological insulator with transient Dirac cone electron-hole asymmetry. Nat. Commun. 5:3003 doi : 10.1038/ncomms4003 (2014). ARTICLE NATURE

An opto-electronic joint detection system based on DSP aiming at early cervical cancer screening

NASA Astrophysics Data System (ADS)

Wang, Weiya; Jia, Mengyu; Gao, Feng; Yang, Lihong; Qu, Pengpeng; Zou, Changping; Liu, Pengxi; Zhao, Huijuan

2015-02-01

The cervical cancer screening at a pre-cancer stage is beneficial to reduce the mortality of women. An opto-electronic joint detection system based on DSP aiming at early cervical cancer screening is introduced in this paper. In this system, three electrodes alternately discharge to the cervical tissue and three light emitting diodes in different wavelengths alternately irradiate the cervical tissue. Then the relative optical reflectance and electrical voltage attenuation curve are obtained by optical and electrical detection, respectively. The system is based on DSP to attain the portable and cheap instrument. By adopting the relative reflectance and the voltage attenuation constant, the classification algorithm based on Support Vector Machine (SVM) discriminates abnormal cervical tissue from normal. We use particle swarm optimization to optimize the two key parameters of SVM, i.e. nuclear factor and cost factor. The clinical data were collected on 313 patients to build a clinical database of tissue responses under optical and electrical stimulations with the histopathologic examination as the gold standard. The classification result shows that the opto-electronic joint detection has higher total coincidence rate than separate optical detection or separate electrical detection. The sensitivity, specificity, and total coincidence rate increase with the increasing of sample numbers in the training set. The average total coincidence rate of the system can reach 85.1% compared with the histopathologic examination.

Stereoscopic construction and practice of optoelectronic technology textbook

NASA Astrophysics Data System (ADS)

Zhou, Zigang; Zhang, Jinlong; Wang, Huili; Yang, Yongjia; Han, Yanling

2017-08-01

It is a professional degree course textbook for the Nation-class Specialty—Optoelectronic Information Science and Engineering, and it is also an engineering practice textbook for the cultivation of photoelectric excellent engineers. The book seeks to comprehensively introduce the theoretical and applied basis of optoelectronic technology, and it's closely linked to the current development of optoelectronic industry frontier and made up of following core contents, including the laser source, the light's transmission, modulation, detection, imaging and display. At the same time, it also embodies the features of the source of laser, the transmission of the waveguide, the electronic means and the optical processing methods.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

NASA Astrophysics Data System (ADS)

Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

2014-11-01

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in

Designing a porous-crystalline structure of β-Ga2O3: a potential approach to tune its opto-electronic properties.

PubMed

Banerjee, Swastika; Jiang, Xiangwei; Wang, Lin-Wang

2018-04-04

β-Ga2O3 has drawn recent attention as a state-of-the-art electronic material due to its stability, optical transparency and appealing performance in power devices. However, it has also found a wider range of opto-electronic applications including photocatalysis, especially in its porous form. For such applications, a lower band gap must be obtained and an electron-hole spatial separation would be beneficial. Like many other metal oxides (e.g. Al2O3), Ga2O3 can also form various types of porous structure. In the present study, we investigate how its optical and electronic properties can be changed in a particular porous structure with stoichiometrically balanced and extended vacancy channels. We apply a set of first principles computational methods to investigate the formation and the structural, dynamic, and opto-electronic properties. We find that such an extended vacancy channel is mechanically stable and has relatively low formation energy. We also find that this results in a spatial separation of the electron and hole, forming a long-lived charge transfer state that has desirable characteristics for a photocatalyst. In addition, the electronic band gap reduces to the vis-region unlike the transparency in the pure β-Ga2O3 crystal. Thus, our systematic study is promising for the application of such a porous structure of β-Ga2O3 as a versatile electronic material.

Multifunctional Silicon Optoelectronics Integrated with Plasmonic Scattering Color.

PubMed

Wen, Long; Chen, Qin; Hu, Xin; Wang, Huacun; Jin, Lin; Su, Qiang

2016-12-27

Plasmonic scattering from metallic nanoparticles has been used for centuries to create the colorful appearance of stained glass. Besides their use as passive spectral filtering components, multifunctional optoelectronic applications can be achieved by integrating the nanoscatters with semiconductors that generate electricity using the complementary spectral components of plasmonic colors. To suppress the usual degradation of both efficiency and the gamut of plasmonic scattering coloration in highly asymmetric index configurations like a silicon host, aluminum nanodisks on indium tin oxide (ITO) coated silicon were experimentally studied and demonstrated color sorting in the full visible range along with photocurrent generation. Interestingly, the photocurrents were found to be comparable to the reference devices with only antireflection coatings in spite of the power loss for coloration. Detailed investigation shows that ITO serves as both the impedance matching layer for promoting the backward scattering and schottky contact with silicon, and moreover, plasmonic nanoscatters efficiently harvest the complement spectrum components for charge generation. The present approach combines the capacities of nanoscale color sorting and photoelectric converting at a negligible cost of efficiency, thus providing a broad flexibility of being utilized in various optoelectronic applications including self-powered display, filter-free imaging, and colorful photovoltaics.

Quantitative characterization of nanoscale polycrystalline magnets with electron magnetic circular dichroism.

PubMed

Muto, Shunsuke; Rusz, Ján; Tatsumi, Kazuyoshi; Adam, Roman; Arai, Shigeo; Kocevski, Vancho; Oppeneer, Peter M; Bürgler, Daniel E; Schneider, Claus M

2014-01-01

Electron magnetic circular dichroism (EMCD) allows the quantitative, element-selective determination of spin and orbital magnetic moments, similar to its well-established X-ray counterpart, X-ray magnetic circular dichroism (XMCD). As an advantage over XMCD, EMCD measurements are made using transmission electron microscopes, which are routinely operated at sub-nanometre resolution, thereby potentially allowing nanometre magnetic characterization. However, because of the low intensity of the EMCD signal, it has not yet been possible to obtain quantitative information from EMCD signals at the nanoscale. Here we demonstrate a new approach to EMCD measurements that considerably enhances the outreach of the technique. The statistical analysis introduced here yields robust quantitative EMCD signals. Moreover, we demonstrate that quantitative magnetic information can be routinely obtained using electron beams of only a few nanometres in diameter without imposing any restriction regarding the crystalline order of the specimen.

Nanowire Optoelectronics

NASA Astrophysics Data System (ADS)

Wang, Zhihuan; Nabet, Bahram

2015-12-01

Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs), lasers, sensors, and optical antennas. We review the optical properties of these nanowires in terms of absorption, guiding, and radiation of light, which may be termed light management. Analysis of the interaction of light with long cylindrical/hexagonal structures with subwavelength diameters identifies radial resonant modes, such as Leaky Mode Resonances, or Whispering Gallery modes. The two-dimensional treatment should incorporate axial variations in "volumetric modes,"which have so far been presented in terms of Fabry-Perot (FP), and helical resonance modes. We report on finite-difference timedomain (FDTD) simulations with the aim of identifying the dependence of these modes on geometry (length, width), tapering, shape (cylindrical, hexagonal), core-shell versus core-only, and dielectric cores with semiconductor shells. This demonstrates how nanowires (NWs) form excellent optical cavities without the need for top and bottommirrors. However, optically equivalent structures such as hexagonal and cylindrical wires can have very different optoelectronic properties meaning that light management alone does not sufficiently describe the observed enhancement in upward (absorption) and downward transitions (emission) of light inNWs; rather, the electronic transition rates should be considered. We discuss this "rate management" scheme showing its strong dimensional dependence, making a case for photonic integrated circuits (PICs) that can take advantage of the confluence of the desirable optical and electronic properties of these nanostructures.

Nanoscale Engineering in VO2 Nanowires via Direct Electron Writing Process.

PubMed

Zhang, Zhenhua; Guo, Hua; Ding, Wenqiang; Zhang, Bin; Lu, Yue; Ke, Xiaoxing; Liu, Weiwei; Chen, Furong; Sui, Manling

2017-02-08

Controlling phase transition in functional materials at nanoscale is not only of broad scientific interest but also important for practical applications in the fields of renewable energy, information storage, transducer, sensor, and so forth. As a model functional material, vanadium dioxide (VO 2 ) has its metal-insulator transition (MIT) usually at a sharp temperature around 68 °C. Here, we report a focused electron beam can directly lower down the transition temperature of a nanoarea to room temperature without prepatterning the VO 2 . This novel process is called radiolysis-assisted MIT (R-MIT). The electron beam irradiation fabricates a unique gradual MIT zone to several times of the beam size in which the temperature-dependent phase transition is achieved in an extended temperature range. The gradual transformation zone offers to precisely control the ratio of metal/insulator phases. This direct electron writing technique can open up an opportunity to precisely engineer nanodomains of diversified electronic properties in functional material-based devices.

Perovskite Materials: Solar Cell and Optoelectronic Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Bin; Geohegan, David B; Xiao, Kai

2017-01-01

Hybrid organometallic trihalide perovskites are promising candidates in the applications for next-generation, high-performance, low-cost optoelectronic devices, including photovoltaics, light emitting diodes, and photodetectors. Particularly, the solar cells based on this type of materials have reached 22% lab scale power conversion efficiency in only about seven years, comparable to the other thin film photovoltaic technologies. Hybrid perovskite materials not only exhibit superior optoelectronic properties, but also show many interesting physical properties such as ion migration and defect physics, which may allow the exploration of more device functionalities. In this article, the fundamental understanding of the interrelationships between crystal structure, electronic structure,more » and material properties is discussed. Various chemical synthesis and processing methods for superior device performance in solar cells and optoelectronic devices are reviewed.« less

Nanoscale On-Silico Electron Transport via Ferritins.

PubMed

Bera, Sudipta; Kolay, Jayeeta; Banerjee, Siddhartha; Mukhopadhyay, Rupa

2017-02-28

Silicon is a solid-state semiconducting material that has long been recognized as a technologically useful one, especially in electronics industry. However, its application in the next-generation metalloprotein-based electronics approaches has been limited. In this work, the applicability of silicon as a solid support for anchoring the iron-storage protein ferritin, which has a semiconducting iron nanocore, and probing electron transport via the ferritin molecules trapped between silicon substrate and a conductive scanning probe has been investigated. Ferritin protein is an attractive bioelectronic material because its size (X-ray crystallographic diameter ∼12 nm) should allow it to fit well in the larger tunnel gaps (>5 nm), fabrication of which is relatively more established, than the smaller ones. The electron transport events occurring through the ferritin molecules that are covalently anchored onto the MPTMS-modified silicon surface could be detected at the molecular level by current-sensing atomic force spectroscopy (CSAFS). Importantly, the distinct electronic signatures of the metal types (i.e., Fe, Mn, Ni, and Au) within the ferritin nanocore could be distinguished from each other using the transport band gap analyses. The CSAFS measurements on holoferritin, apoferritin, and the metal core reconstituted ferritins reveal that some of these ferritins behave like n-type semiconductors, while the others behave as p-type semiconductors. The band gaps for the different ferritins are found to be within 0.8 to 2.6 eV, a range that is valid for the standard semiconductor technology (e.g., diodes based on p-n junction). The present work indicates effective on-silico integration of the ferritin protein, as it remains functionally viable after silicon binding and its electron transport activities can be detected. Potential use of the ferritin-silicon nanohybrids may therefore be envisaged in applications other than bioelectronics, too, as ferritin is a versatile

Optical biosensors: a revolution towards quantum nanoscale electronics device fabrication.

PubMed

Dey, D; Goswami, T

2011-01-01

The dimension of biomolecules is of few nanometers, so the biomolecular devices ought to be of that range so a better understanding about the performance of the electronic biomolecular devices can be obtained at nanoscale. Development of optical biomolecular device is a new move towards revolution of nano-bioelectronics. Optical biosensor is one of such nano-biomolecular devices that has a potential to pave a new dimension of research and device fabrication in the field of optical and biomedical fields. This paper is a very small report about optical biosensor and its development and importance in various fields.

Direct anisotropic growth of CdS nanocrystals in thermotropic liquid crystal templates for heterojunction optoelectronics.

PubMed

Yuan, Kai; Chen, Lie; Chen, Yiwang

2014-09-01

The direct growth of CdS nanocrystals in functional solid-state thermotropic liquid crystal (LC) small molecules and a conjugated LC polymer by in situ thermal decomposition of a single-source cadmium xanthate precursor to fabricate LC/CdS hybrid nanocomposites is described. The influence of thermal annealing temperature of the LC/CdS precursors upon the nanomorphology, photophysics, and optoelectronic properties of the LC/CdS nanocomposites is systematically studied. Steady-state PL and ultrafast emission dynamics studies show that the charge-transfer rates are strongly dependent on the thermal annealing temperature. Notably, annealing at liquid-crystal state temperature promotes a more organized nanomorphology of the LC/CdS nanocomposites with improved photophysics and optoelectronic properties. The results confirm that thermotropic LCs can be ideal candidates as organization templates for the control of organic/inorganic hybrid nanocomposites at the nanoscale level. The results also demonstrate that in situ growth of semiconducting nanocrystals in thermotropic LCs is a versatile route to hybrid organic/inorganic nanocomposites and optoelectronic devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Significant performance enhancement in photoconductive terahertz optoelectronics by incorporating plasmonic contact electrodes.

PubMed

Berry, C W; Wang, N; Hashemi, M R; Unlu, M; Jarrahi, M

2013-01-01

Even though the terahertz spectrum is well suited for chemical identification, material characterization, biological sensing and medical imaging, practical development of these applications has been hindered by attributes of existing terahertz optoelectronics. Here we demonstrate that the use of plasmonic contact electrodes can significantly mitigate the low-quantum efficiency performance of photoconductive terahertz optoelectronics. The use of plasmonic contact electrodes offers nanoscale carrier transport path lengths for the majority of photocarriers, increasing the number of collected photocarriers in a subpicosecond timescale and, thus, enhancing the optical-to-terahertz conversion efficiency of photoconductive terahertz emitters and the detection sensitivity of photoconductive terahertz detectors. We experimentally demonstrate 50 times higher terahertz radiation powers from a plasmonic photoconductive emitter in comparison with a similar photoconductive emitter with non-plasmonic contact electrodes, as well as 30 times higher terahertz detection sensitivities from a plasmonic photoconductive detector in comparison with a similar photoconductive detector with non-plasmonic contact electrodes.

Stoichiometric control of lead chalcogenide nanocrystal solids to enhance their electronic and optoelectronic device performance.

PubMed

Oh, Soong Ju; Berry, Nathaniel E; Choi, Ji-Hyuk; Gaulding, E Ashley; Paik, Taejong; Hong, Sung-Hoon; Murray, Christopher B; Kagan, Cherie R

2013-03-26

We investigate the effects of stoichiometric imbalance on the electronic properties of lead chalcogenide nanocrystal films by introducing excess lead (Pb) or selenium (Se) through thermal evaporation. Hall-effect and capacitance-voltage measurements show that the carrier type, concentration, and Fermi level in nanocrystal solids may be precisely controlled through their stoichiometry. By manipulating only the stoichiometry of the nanocrystal solids, we engineer the characteristics of electronic and optoelectronic devices. Lead chalcogenide nanocrystal field-effect transistors (FETs) are fabricated at room temperature to form ambipolar, unipolar n-type, and unipolar p-type semiconducting channels as-prepared and with excess Pb and Se, respectively. Introducing excess Pb forms nanocrystal FETs with electron mobilities of 10 cm(2)/(V s), which is an order of magnitude higher than previously reported in lead chalcogenide nanocrystal devices. Adding excess Se to semiconductor nanocrystal solids in PbSe Schottky solar cells enhances the power conversion efficiency.

Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamaguchi, Hisato; Ogawa, Shuichi; Watanabe, Daiki

We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 °C. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a setmore » of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.« less

Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

DOE PAGES

Yamaguchi, Hisato; Ogawa, Shuichi; Watanabe, Daiki; ...

2016-09-01

We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 °C. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a setmore » of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.« less

Wideband-frequency tunable optoelectronic oscillator based on injection locking to an electronic oscillator.

PubMed

Fleyer, Michael; Sherman, Alexander; Horowitz, Moshe; Namer, Moshe

2016-05-01

We experimentally demonstrate a wideband-frequency tunable optoelectronic oscillator (OEO) based on injection locking of the OEO to a tunable electronic oscillator. The OEO cavity does not contain a narrowband filter and its frequency can be tuned over a broad bandwidth of 1 GHz. The injection locking is based on minimizing the injected power by adjusting the frequency of one of the OEO cavity modes to be approximately equal to the frequency of the injected signal. The phase noise that is obtained in the injection-locked OEO is similar to that obtained in a long-cavity self-sustained OEO. Although the cavity length of the OEO was long, the spurious modes were suppressed due to the injection locking without the need to use a narrowband filter. The spurious level was significantly below that obtained in a self-sustained OEO after inserting a narrowband electronic filter with a Q-factor of 720 into the cavity.

Investigation of Electronic and Opto-Electronic Properties of Two-Dimensional (2D) Layers of Copper Indium Selenide Field Effect Transistors

NASA Astrophysics Data System (ADS)

Patil, Prasanna Dnyaneshwar

Investigations performed in order to understand the electronic and optoelectronic properties of field effect transistors based on few layers of 2D Copper Indium Selenide (CuIn7Se11) are reported. In general, field effect transistors (FETs), electric double layer field effect transistors (EDL-FETs), and photodetectors are crucial part of several electronics based applications such as tele-communication, bio-sensing, and opto-electronic industry. After the discovery of graphene, several 2D semiconductor materials like TMDs (MoS2, WS2, and MoSe2 etc.), group III-VI materials (InSe, GaSe, and SnS2 etc.) are being studied rigorously in order to develop them as components in next generation FETs. Traditionally, thin films of ternary system of Copper Indium Selenide have been extensively studied and used in optoelectronics industry as photoactive component in solar cells. Thus, it is expected that atomically thin 2D layered structure of Copper Indium Selenide can have optical properties that could potentially be more advantageous than its thin film counterpart and could find use for developing next generation nano devices with utility in opto/nano electronics. Field effect transistors were fabricated using few-layers of CuIn7Se11 flakes, which were mechanically exfoliated from bulk crystals grown using chemical vapor transport technique. Our FET transport characterization measurements indicate n-type behavior with electron field effect mobility microFE ≈ 36 cm2 V-1 s-1 at room temperature when Silicon dioxide (SiO2) is used as a back gate. We found that in such back gated field effect transistor an on/off ratio of 104 and a subthreshold swing ≈ 1 V/dec can be obtained. Our investigations further indicate that Electronic performance of these materials can be increased significantly when gated from top using an ionic liquid electrolyte [1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6)]. We found that electron field effect mobility microFE can be increased from

Nanoscale Electronic Transport Studies of Novel Strongly Correlated Materials

NASA Astrophysics Data System (ADS)

Hardy, Will J.

Strongly correlated materials are those in which the electron-electron and electron-lattice interactions play pivotal roles in determining many aspects of observable physical behavior, including the electronic and magnetic properties. In this thesis, I describe electronic transport studies of novel strongly correlated materials at the nanoscale. After introducing some basic concepts, briefly reviewing historical development of the field, and discussing the process of making measurements on small length scales, I detail experimental results from studies of four specific materials: two transition metal oxide systems, and two layered transition metal dichalcogenides with intercalated magnetic moments. The first system is a modified version of a classic strongly correlated material, vanadium dioxide (VO2), which here is doped with hydrogen to suppress its metal-insulator transition and stabilize a poorly metallic phase down to liquid helium temperatures. Doped VO2 nanowires, micron flakes, and thin films display magnetoresistance (MR) consistent with weak localization physics, along with mesoscopic resistance fluctuations over short distances, raising questions about how to model transport in bad-metal correlated systems. A second transition metal oxide system is considered next: Quantum wells in SrTiO3 sandwiched between layers of SmTiO3, in which anomalous voltage fluctuation behavior is observed in etched nanostructures at low temperatures. After well-understood alternative origins are ruled out, an explanation is proposed involving a time-varying thermopower due to two-level fluctuations of etching-induced defects. Next, I shift to the topic of layered itinerant magnetic materials with intercalated moments, starting with Fe0.28TaS 2, a hard ferromagnet (FM) with strong spin-orbit coupling. Here, a surprisingly large MR of nearly 70% is observed, an especially striking feature given that the closely related compounds at Fe intercalation fractions of 1/4 or 1/3 have

Recent developments of truly stretchable thin film electronic and optoelectronic devices.

PubMed

Zhao, Juan; Chi, Zhihe; Yang, Zhan; Chen, Xiaojie; Arnold, Michael S; Zhang, Yi; Xu, Jiarui; Chi, Zhenguo; Aldred, Matthew P

2018-03-29

Truly stretchable electronics, wherein all components themselves permit elastic deformation as the whole devices are stretched, exhibit unique advantages over other strategies, such as simple fabrication process, high integrity of entire components and intimate integration with curvilinear surfaces. In contrast to the stretchable devices using stretchable interconnectors to integrate with rigid active devices, truly stretchable devices are realized with or without intentionally employing structural engineering (e.g. buckling), and the whole device can be bent, twisted, or stretched to meet the demands for practical applications, which are beyond the capability of conventional flexible devices that can only bend or twist. Recently, great achievements have been made toward truly stretchable electronics. Here, the contribution of this review is an effort to provide a panoramic view of the latest progress concerning truly stretchable electronic devices, of which we give special emphasis to three kinds of thin film electronic and optoelectronic devices: (1) thin film transistors, (2) electroluminescent devices (including organic light-emitting diodes, light-emitting electrochemical cells and perovskite light-emitting diodes), and (3) photovoltaics (including organic photovoltaics and perovskite solar cells). We systematically discuss the device design and fabrication strategies, the origin of device stretchability and the relationship between the electrical and mechanical behaviors of the devices. We hope that this review provides a clear outlook of these attractive stretchable devices for a broad range of scientists and attracts more researchers to devote their time to this interesting research field in both industry and academia, thus encouraging more intelligent lifestyles for human beings in the coming future.

Effect of etching time on morphological, optical, and electronic properties of silicon nanowires

PubMed Central

2012-01-01

Owing to their interesting electronic, mechanical, optical, and transport properties, silicon nanowires (SiNWs) have attracted much attention, giving opportunities to several potential applications in nanoscale electronic, optoelectronic devices, and silicon solar cells. For photovoltaic application, a superficial film of SiNWs could be used as an efficient antireflection coating. In this work we investigate the morphological, optical, and electronic properties of SiNWs fabricated at different etching times. Characterizations of the formed SiNWs films were performed using a scanning electron microscope, ultraviolet–visible-near-infrared spectroscopy, and light-beam-induced-current technique. The latter technique was used to determine the effective diffusion length in SiNWs films. From these investigations, we deduce that the homogeneity of the SiNWs film plays a key role on the electronic properties. PMID:22799265

Effect of etching time on morphological, optical, and electronic properties of silicon nanowires.

PubMed

Nafie, Nesma; Lachiheb, Manel Abouda; Bouaicha, Mongi

2012-07-16

Owing to their interesting electronic, mechanical, optical, and transport properties, silicon nanowires (SiNWs) have attracted much attention, giving opportunities to several potential applications in nanoscale electronic, optoelectronic devices, and silicon solar cells. For photovoltaic application, a superficial film of SiNWs could be used as an efficient antireflection coating. In this work we investigate the morphological, optical, and electronic properties of SiNWs fabricated at different etching times. Characterizations of the formed SiNWs films were performed using a scanning electron microscope, ultraviolet-visible-near-infrared spectroscopy, and light-beam-induced-current technique. The latter technique was used to determine the effective diffusion length in SiNWs films. From these investigations, we deduce that the homogeneity of the SiNWs film plays a key role on the electronic properties.

Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

DOE PAGES

Park, J.; Ahn, Y.; Tilka, J. A.; ...

2016-06-20

Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Furthermore, electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.

Accurate Nanoscale Crystallography in Real-Space Using Scanning Transmission Electron Microscopy.

PubMed

Dycus, J Houston; Harris, Joshua S; Sang, Xiahan; Fancher, Chris M; Findlay, Scott D; Oni, Adedapo A; Chan, Tsung-Ta E; Koch, Carl C; Jones, Jacob L; Allen, Leslie J; Irving, Douglas L; LeBeau, James M

2015-08-01

Here, we report reproducible and accurate measurement of crystallographic parameters using scanning transmission electron microscopy. This is made possible by removing drift and residual scan distortion. We demonstrate real-space lattice parameter measurements with <0.1% error for complex-layered chalcogenides Bi2Te3, Bi2Se3, and a Bi2Te2.7Se0.3 nanostructured alloy. Pairing the technique with atomic resolution spectroscopy, we connect local structure with chemistry and bonding. Combining these results with density functional theory, we show that the incorporation of Se into Bi2Te3 causes charge redistribution that anomalously increases the van der Waals gap between building blocks of the layered structure. The results show that atomic resolution imaging with electrons can accurately and robustly quantify crystallography at the nanoscale.

In-situ realtime monitoring of nanoscale gold electroplating using micro-electro-mechanical systems liquid cell operating in transmission electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egawa, Minoru; Fujita, Hiroyuki; Ishida, Tadashi, E-mail: ishida.t.ai@m.titech.ac.jp

2016-01-11

The dynamics of nanoscale electroplating between gold electrodes was investigated using a microfabricated liquid cell mounted on a scanning transmission electron microscope. The electroplating was recorded in-situ for 10 min with a spatial resolution higher than 6 nm. At the beginning of the electroplating, gold spike-like structures of about 50 nm in size grew from an electrode, connected gold nanoclusters around them, and form three dimensional nanoscale structures. We visualized the elementary process of the gold electroplating, and believe that the results lead to the deeper understanding of electroplating at the nanoscale.

Nicholas Metropolis Award for Outstanding Doctoral Thesis Work in Computational Physics Talk: Understanding Nano-scale Electronic Systems via Large-scale Computation

NASA Astrophysics Data System (ADS)

Cao, Chao

2009-03-01

Nano-scale physical phenomena and processes, especially those in electronics, have drawn great attention in the past decade. Experiments have shown that electronic and transport properties of functionalized carbon nanotubes are sensitive to adsorption of gas molecules such as H2, NO2, and NH3. Similar measurements have also been performed to study adsorption of proteins on other semiconductor nano-wires. These experiments suggest that nano-scale systems can be useful for making future chemical and biological sensors. Aiming to understand the physical mechanisms underlying and governing property changes at nano-scale, we start off by investigating, via first-principles method, the electronic structure of Pd-CNT before and after hydrogen adsorption, and continue with coherent electronic transport using non-equilibrium Green’s function techniques combined with density functional theory. Once our results are fully analyzed they can be used to interpret and understand experimental data, with a few difficult issues to be addressed. Finally, we discuss a newly developed multi-scale computing architecture, OPAL, that coordinates simultaneous execution of multiple codes. Inspired by the capabilities of this computing framework, we present a scenario of future modeling and simulation of multi-scale, multi-physical processes.

Two-dimensional Cu2Si sheet: a promising electrode material for nanoscale electronics.

PubMed

Yam, Kah Meng; Guo, Na; Zhang, Chun

2018-06-15

Building electronic devices on top of two-dimensional (2D) materials has recently become one of most interesting topics in nanoelectronics. Finding high-performance 2D electrode materials is one central issue in 2D nanoelectronics. In the current study, based on first-principles calculations, we compare the electronic and transport properties of two nanoscale devices. One device consists of two single-atom-thick planar Cu 2 Si electrodes, and a nickel phthalocyanine (NiPc) molecule in the middle. The other device is made of often-used graphene electrodes and a NiPc molecule. Planer Cu 2 Si is a new type of 2D material that was recently predicted to exist and be stable under room temperature [11]. We found that at low bias voltages, the electric current through the Cu 2 Si-NiPc-Cu 2 Si junction is about three orders higher than that through graphene-NiPc-graphene. Detailed analysis shows that the surprisingly high conductivity of Cu 2 Si-NiPc-Cu 2 Si originates from the mixing of the Cu 2 Si state near Fermi energy and the highest occupied molecular orbital of NiPc. These results suggest that 2D Cu 2 Si may be an excellent candidate for electrode materials for future nanoscale devices.

Two-dimensional Cu2Si sheet: a promising electrode material for nanoscale electronics

NASA Astrophysics Data System (ADS)

Meng Yam, Kah; Guo, Na; Zhang, Chun

2018-06-01

Building electronic devices on top of two-dimensional (2D) materials has recently become one of most interesting topics in nanoelectronics. Finding high-performance 2D electrode materials is one central issue in 2D nanoelectronics. In the current study, based on first-principles calculations, we compare the electronic and transport properties of two nanoscale devices. One device consists of two single-atom-thick planar Cu2Si electrodes, and a nickel phthalocyanine (NiPc) molecule in the middle. The other device is made of often-used graphene electrodes and a NiPc molecule. Planer Cu2Si is a new type of 2D material that was recently predicted to exist and be stable under room temperature [11]. We found that at low bias voltages, the electric current through the Cu2Si–NiPc–Cu2Si junction is about three orders higher than that through graphene–NiPc–graphene. Detailed analysis shows that the surprisingly high conductivity of Cu2Si–NiPc–Cu2Si originates from the mixing of the Cu2Si state near Fermi energy and the highest occupied molecular orbital of NiPc. These results suggest that 2D Cu2Si may be an excellent candidate for electrode materials for future nanoscale devices.

Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS2 Transistors.

PubMed

Matsunaga, Masahiro; Higuchi, Ayaka; He, Guanchen; Yamada, Tetsushi; Krüger, Peter; Ochiai, Yuichi; Gong, Yongji; Vajtai, Robert; Ajayan, Pulickel M; Bird, Jonathan P; Aoki, Nobuyuki

2016-10-05

Utilizing an innovative combination of scanning-probe and spectroscopic techniques, supported by first-principles calculations, we demonstrate how electron-beam exposure of field-effect transistors, implemented from ultrathin molybdenum disulfide (MoS 2 ), may cause nanoscale structural modifications that in turn significantly modify the electrical operation of these devices. Quite surprisingly, these modifications are induced by even the relatively low electron doses used in conventional electron-beam lithography, which are found to induce compressive strain in the atomically thin MoS 2 . Likely arising from sulfur-vacancy formation in the exposed regions, the strain gives rise to a local widening of the MoS 2 bandgap, an idea that is supported both by our experiment and by the results of first-principles calculations. A nanoscale potential barrier develops at the boundary between exposed and unexposed regions and may cause extrinsic variations in the resulting electrical characteristics exhibited by the transistor. The widespread use of electron-beam lithography in nanofabrication implies that the presence of such strain must be carefully considered when seeking to harness the potential of atomically thin transistors. At the same time, this work also promises the possibility of exploiting the strain as a means to achieve "bandstructure engineering" in such devices.

Injection locked coupled opto-electronic oscillator for optical frequency comb generation

NASA Astrophysics Data System (ADS)

Williams, Charles; Mandridis, Dimitrios; Davila-Rodriguez, Josue; Delfyett, Peter J.

2011-06-01

A CW injection locked Coupled Opto-Electronic Oscillator (COEO) is presented with a 10.24 GHz spaced optical frequency comb output as well as a low noise RF output. A modified Pound-Drever-Hall scheme is employed to ensure long-term stability of the injection lock, feeding back into the cavity length to compensate for cavity resonance drifts relative to the injection seed frequency. Error signal comparison to an actively mode-locked injection locked laser is presented. High optical signal-to-noise ratio of ~35 dB is demonstrated with >20 comblines of useable bandwidth. The optical linewidth, in agreement with injection locking theory, reduces to that of the injection seed frequency, <5 kHz. Low amplitude and absolute phase noise are presented from the optical output of the laser system. The integrated pulse-to-pulse energy fluctuation was found to be reduced by up to a factor of two due to optical injection. Additional decreases were shown for varying injection powers.

Wafer-Scale Integration of Graphene-based Electronic, Optoelectronic and Electroacoustic Devices

PubMed Central

Tian, He; Yang, Yi; Xie, Dan; Cui, Ya-Long; Mi, Wen-Tian; Zhang, Yuegang; Ren, Tian-Ling

2014-01-01

In virtue of its superior properties, the graphene-based device has enormous potential to be a supplement or an alternative to the conventional silicon-based device in varies applications. However, the functionality of the graphene devices is still limited due to the restriction of the high cost, the low efficiency and the low quality of the graphene growth and patterning techniques. We proposed a simple one-step laser scribing fabrication method to integrate wafer-scale high-performance graphene-based in-plane transistors, photodetectors, and loudspeakers. The in-plane graphene transistors have a large on/off ratio up to 5.34. And the graphene photodetector arrays were achieved with photo responsivity as high as 0.32 A/W. The graphene loudspeakers realize wide-band sound generation from 1 to 50 kHz. These results demonstrated that the laser scribed graphene could be used for wafer-scale integration of a variety of graphene-based electronic, optoelectronic and electroacoustic devices. PMID:24398542

A new regime of nanoscale thermal transport: Collective diffusion increases dissipation efficiency

DOE PAGES

Hoogeboom-Pot, Kathleen M.; Hernandez-Charpak, Jorge N.; Gu, Xiaokun; ...

2015-03-23

Understanding thermal transport from nanoscale heat sources is important for a fundamental description of energy flow in materials, as well as for many technological applications including thermal management in nanoelectronics and optoelectronics, thermoelectric devices, nanoenhanced photovoltaics, and nanoparticle-mediated thermal therapies. Thermal transport at the nanoscale is fundamentally different from that at the macroscale and is determined by the distribution of carrier mean free paths and energy dispersion in a material, the length scales of the heat sources, and the distance over which heat is transported. Past work has shown that Fourier’s law for heat conduction dramatically overpredicts the rate ofmore » heat dissipation from heat sources with dimensions smaller than the mean free path of the dominant heat-carrying phonons. In this work, we uncover a new regime of nanoscale thermal transport that dominates when the separation between nanoscale heat sources is small compared with the dominant phonon mean free paths. Surprisingly, the interaction of phonons originating from neighboring heat sources enables more efficient diffusive-like heat dissipation, even from nanoscale heat sources much smaller than the dominant phonon mean free paths. This finding suggests that thermal management in nanoscale systems including integrated circuits might not be as challenging as previously projected. In conclusion, we demonstrate a unique capability to extract differential conductivity as a function of phonon mean free path in materials, allowing the first (to our knowledge) experimental validation of predictions from the recently developed first-principles calculations.« less

A new regime of nanoscale thermal transport: Collective diffusion increases dissipation efficiency

NASA Astrophysics Data System (ADS)

Hoogeboom-Pot, Kathleen M.; Hernandez-Charpak, Jorge N.; Gu, Xiaokun; Frazer, Travis D.; Anderson, Erik H.; Chao, Weilun; Falcone, Roger W.; Yang, Ronggui; Murnane, Margaret M.; Kapteyn, Henry C.; Nardi, Damiano

2015-04-01

Understanding thermal transport from nanoscale heat sources is important for a fundamental description of energy flow in materials, as well as for many technological applications including thermal management in nanoelectronics and optoelectronics, thermoelectric devices, nanoenhanced photovoltaics, and nanoparticle-mediated thermal therapies. Thermal transport at the nanoscale is fundamentally different from that at the macroscale and is determined by the distribution of carrier mean free paths and energy dispersion in a material, the length scales of the heat sources, and the distance over which heat is transported. Past work has shown that Fourier's law for heat conduction dramatically overpredicts the rate of heat dissipation from heat sources with dimensions smaller than the mean free path of the dominant heat-carrying phonons. In this work, we uncover a new regime of nanoscale thermal transport that dominates when the separation between nanoscale heat sources is small compared with the dominant phonon mean free paths. Surprisingly, the interaction of phonons originating from neighboring heat sources enables more efficient diffusive-like heat dissipation, even from nanoscale heat sources much smaller than the dominant phonon mean free paths. This finding suggests that thermal management in nanoscale systems including integrated circuits might not be as challenging as previously projected. Finally, we demonstrate a unique capability to extract differential conductivity as a function of phonon mean free path in materials, allowing the first (to our knowledge) experimental validation of predictions from the recently developed first-principles calculations.

Nanoscale electron transport at the surface of a topological insulator.

PubMed

Bauer, Sebastian; Bobisch, Christian A

2016-04-21

The use of three-dimensional topological insulators for disruptive technologies critically depends on the dissipationless transport of electrons at the surface, because of the suppression of backscattering at defects. However, in real devices, defects are unavoidable and scattering at angles other than 180° is allowed for such materials. Until now, this has been studied indirectly by bulk measurements and by the analysis of the local density of states in close vicinity to defect sites. Here, we directly measure the nanoscale voltage drop caused by the scattering at step edges, which occurs if a lateral current flows along a three-dimensional topological insulator. The experiments were performed using scanning tunnelling potentiometry for thin Bi2Se3 films. So far, the observed voltage drops are small because of large contributions of the bulk to the electronic transport. However, for the use of ideal topological insulating thin films in devices, these contributions would play a significant role.

Nanoscale electron transport at the surface of a topological insulator

NASA Astrophysics Data System (ADS)

Bauer, Sebastian; Bobisch, Christian A.

2016-04-01

The use of three-dimensional topological insulators for disruptive technologies critically depends on the dissipationless transport of electrons at the surface, because of the suppression of backscattering at defects. However, in real devices, defects are unavoidable and scattering at angles other than 180° is allowed for such materials. Until now, this has been studied indirectly by bulk measurements and by the analysis of the local density of states in close vicinity to defect sites. Here, we directly measure the nanoscale voltage drop caused by the scattering at step edges, which occurs if a lateral current flows along a three-dimensional topological insulator. The experiments were performed using scanning tunnelling potentiometry for thin Bi2Se3 films. So far, the observed voltage drops are small because of large contributions of the bulk to the electronic transport. However, for the use of ideal topological insulating thin films in devices, these contributions would play a significant role.

Multi-object detection and tracking technology based on hexagonal opto-electronic detector

NASA Astrophysics Data System (ADS)

Song, Yong; Hao, Qun; Li, Xiang

2008-02-01

A novel multi-object detection and tracking technology based on hexagonal opto-electronic detector is proposed, in which (1) a new hexagonal detector, which is composed of 6 linear CCDs, has been firstly developed to achieve the field of view of 360 degree, (2) to achieve the detection and tracking of multi-object with high speed, the object recognition criterions of Object Signal Width Criterion (OSWC) and Horizontal Scale Ratio Criterion (HSRC) are proposed. In this paper, Simulated Experiments have been carried out to verify the validity of the proposed technology, which show that the detection and tracking of multi-object can be achieved with high speed by using the proposed hexagonal detector and the criterions of OSWC and HSRC, indicating that the technology offers significant advantages in Photo-electric Detection, Computer Vision, Virtual Reality, Augment Reality, etc.

Grain-size considerations for optoelectronic multistage interconnection networks.

PubMed

Krishnamoorthy, A V; Marchand, P J; Kiamilev, F E; Esener, S C

1992-09-10

This paper investigates, at the system level, the performance-cost trade-off between optical and electronic interconnects in an optoelectronic interconnection network. The specific system considered is a packet-switched, free-space optoelectronic shuffle-exchange multistage interconnection network (MIN). System bandwidth is used as the performance measure, while system area, system power, and system volume constitute the cost measures. A detailed design and analysis of a two-dimensional (2-D) optoelectronic shuffle-exchange routing network with variable grain size K is presented. The architecture permits the conventional 2 x 2 switches or grains to be generalized to larger K x K grain sizes by replacing optical interconnects with electronic wires without affecting the functionality of the system. Thus the system consists of log(k) N optoelectronic stages interconnected with free-space K-shuffles. When K = N, the MIN consists of a single electronic stage with optical input-output. The system design use an effi ient 2-D VLSI layout and a single diffractive optical element between stages to provide the 2-D K-shuffle interconnection. Results indicate that there is an optimum range of grain sizes that provides the best performance per cost. For the specific VLSI/GaAs multiple quantum well technology and system architecture considered, grain sizes larger than 256 x 256 result in a reduced performance, while grain sizes smaller than 16 x 16 have a high cost. For a network with 4096 channels, the useful range of grain sizes corresponds to approximately 250-400 electronic transistors per optical input-output channel. The effect of varying certain technology parameters such as the number of hologram phase levels, the modulator driving voltage, the minimum detectable power, and VLSI minimum feature size on the optimum grain-size system is studied. For instance, results show that using four phase levels for the interconnection hologram is a good compromise for the cost

Diffraction contrast as a sensitive indicator of femtosecond sub-nanoscale motion in ultrafast transmission electron microscopy

NASA Astrophysics Data System (ADS)

Cremons, Daniel R.; Schliep, Karl B.; Flannigan, David J.

2013-09-01

With ultrafast transmission electron microscopy (UTEM), access can be gained to the spatiotemporal scales required to directly visualize rapid, non-equilibrium structural dynamics of materials. This is achieved by operating a transmission electron microscope (TEM) in a stroboscopic pump-probe fashion by photoelectrically generating coherent, well-timed electron packets in the gun region of the TEM. These probe photoelectrons are accelerated down the TEM column where they travel through the specimen before reaching a standard, commercially-available CCD detector. A second laser pulse is used to excite (pump) the specimen in situ. Structural changes are visualized by varying the arrival time of the pump laser pulse relative to the probe electron packet at the specimen. Here, we discuss how ultrafast nanoscale motions of crystalline materials can be visualized and precisely quantified using diffraction contrast in UTEM. Because diffraction contrast sensitively depends upon both crystal lattice orientation as well as incoming electron wavevector, minor spatial/directional variations in either will produce dynamic and often complex patterns in real-space images. This is because sections of the crystalline material that satisfy the Laue conditions may be heterogeneously distributed such that electron scattering vectors vary over nanoscale regions. Thus, minor changes in either crystal grain orientation, as occurs during specimen tilting, warping, or anisotropic expansion, or in the electron wavevector result in dramatic changes in the observed diffraction contrast. In this way, dynamic contrast patterns observed in UTEM images can be used as sensitive indicators of ultrafast specimen motion. Further, these motions can be spatiotemporally mapped such that direction and amplitude can be determined.

III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures.

PubMed

Sun, Wei; Tan, Chee-Keong; Tansu, Nelson

2017-07-27

The III-Nitride digital alloy (DA) is comprehensively studied as a short-period superlattice nanostructure consisting of ultra-thin III-Nitride epitaxial layers. By stacking the ultra-thin III-Nitride epitaxial layers periodically, these nanostructures are expected to have comparable optoelectronic properties as the conventional III-Nitride alloys. Here we carried out numerical studies on the InGaN DA showing the tunable optoelectronic properties of the III-Nitride DA. Our study shows that the energy gap of the InGaN DA can be tuned from ~0.63 eV up to ~2.4 eV, where the thicknesses and the thickness ratio of each GaN and InN ultra-thin binary layers within the DA structure are the key factors for tuning bandgap. Correspondingly, the absorption spectra of the InGaN DA yield broad wavelength tunability which is comparable to that of bulk InGaN ternary alloy. In addition, our investigation also reveals that the electron-hole wavefunction overlaps are remarkably large in the InGaN DA structure despite the existence of strain effect and build-in polarization field. Our findings point out the potential of III-Nitride DA as an artificially engineered nanostructure for optoelectronic device applications.

Periodic nanoscale patterning of polyelectrolytes over square centimeter areas using block copolymer templates

DOE PAGES

Oded, Meirav; Kelly, Stephen T.; Gilles, Mary K.; ...

2016-04-07

Nano-patterned materials are beneficial for applications such as solar cells, opto-electronics, and sensing owing to their periodic structure and high interfacial area. We present a non-lithographic approach for assembling polyelectrolytes into periodic nanoscale patterns over cm 2 -scale areas. We used chemically modified block copolymer thin films featuring alternating charged and neutral domains as patterned substrates for electrostatic self-assembly. In-depth characterization of the deposition process using spectroscopy and microscopy techniques, including the state-of-the-art scanning transmission X-ray microscopy (STXM), reveals both the selective deposition of the polyelectrolyte on the charged copolymer domains as well as gradual changes in the film topographymore » that arise from further penetration of the solvent molecules and possibly also the polyelectrolyte into these domains. Our results demonstrate the feasibility of creating nano-patterned polyelectrolyte layers, which opens up new opportunities for structured functional coating fabrication.« less

Recent advances in flexible and wearable organic optoelectronic devices

NASA Astrophysics Data System (ADS)

Zhu, Hong; Shen, Yang; Li, Yanqing; Tang, Jianxin

2018-01-01

Flexible and wearable optoelectronic devices have been developing to a new stage due to their unique capacity for the possibility of a variety of wearable intelligent electronics, including bendable smartphones, foldable touch screens and antennas, paper-like displays, and curved and flexible solid-state lighting devices. Before extensive commercial applications, some issues still have to be solved for flexible and wearable optoelectronic devices. In this regard, this review concludes the newly emerging flexible substrate materials, transparent conductive electrodes, device architectures and light manipulation methods. Examples of these components applied for various kinds of devices are also summarized. Finally, perspectives about the bright future of flexible and wearable electronic devices are proposed. Project supported by the Ministry of Science and Technology of China (No. 2016YFB0400700).

Nanoscale chromatin structure characterization for optical applications: a transmission electron microscopy study (Conference Presentation)

NASA Astrophysics Data System (ADS)

Li, Yue; Cherkezyan, Lusik; Zhang, Di; Almassalha, Luay; Roth, Eric; Chandler, John; Bleher, Reiner; Subramanian, Hariharan; Dravid, Vinayak P.; Backman, Vadim

2017-02-01

Structural and biological origins of light scattering in cells and tissue are still poorly understood. We demonstrate how this problem might be addressed through the use of transmission electron microscopy (TEM). For biological samples, TEM image intensity is proportional to mass-density, and thus proportional to refractive index (RI). By calculating the autocorrelation function (ACF) of TEM image intensity of a thin-section of cells, we essentially maintain the nanoscale ACF of the 3D cellular RI distribution, given that the RI distribution is statistically isotropic. Using this nanoscale 3D RI ACF, we can simulate light scattering through biological samples, and thus guiding many optical techniques to quantify specific structures. In this work, we chose to use Partial Wave Spectroscopy (PWS) microscopy as a one of the nanoscale-sensitive optical techniques. Hela cells were prepared using standard protocol to preserve nanoscale ultrastructure, and a 50-nm slice was sectioned for TEM imaging at 6 nm resolution. The ACF was calculated for chromatin, and the PWS mean sigma was calculated by summing over the power spectral density in the visible light frequency of a random medium generated to match the ACF. A 1-µm slice adjacent to the 50-nm slice was sectioned for PWS measurement to guarantee identical chromatin structure. For 33 cells, we compared the calculated PWS mean sigma from TEM and the value measured directly, and obtained a strong correlation of 0.69. This example indicates the great potential of using TEM measured RI distribution to better understand the quantification of cellular nanostructure by optical methods.

Optoelectronic devices product assurance guideline for space application

NASA Astrophysics Data System (ADS)

Bensoussan, A.; Vanzi, M.

2017-11-01

New opportunities are emerging for the implementation of hardware sub-systems based on OptoElectronic Devices (OED) for space application. Since the end of this decade the main players for space systems namely designers and users including Industries, Agencies, Manufacturers and Laboratories are strongly demanding of adequate strategies to qualify and validate new optoelectronics products and sub-systems [1]. The long term space application mission will require to address either inter-satellite link (free space communication, positioning systems, tracking) or intra-satellite connectivity/flexibility/reconfigurability or high volume of data transfer between equipment installed into payload.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics.

PubMed

Singh, Vivek; Yu, Yixuan; Sun, Qi-C; Korgel, Brian; Nagpal, Prashant

2014-12-21

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.

The impact of semiconductor, electronics and optoelectronic industries on downstream perfluorinated chemical contamination in Taiwanese rivers.

PubMed

Lin, Angela Yu-Chen; Panchangam, Sri Chandana; Lo, Chao-Chun

2009-04-01

This study provides the first evidence on the influence of the semiconductor and electronics industries on perfluorinated chemicals (PFCs) contamination in receiving rivers. We have quantified ten PFCs, including perfluoroalkyl sulfonates (PFASs: PFBS, PFHxS, PFOS) and perfluoroalkyl carboxylates (PFCAs: PFHxA, PFHpA, PFOA, PFNA, PFDA, PFUnA, PFDoA) in semiconductor, electronic, and optoelectronic industrial wastewaters and their receiving water bodies (Taiwan's Keya, Touchien, and Xiaoli rivers). PFOS was found to be the major constituent in semiconductor wastewaters (up to 0.13 mg/L). However, different PFC distributions were found in electronics plant wastewaters; PFOA was the most significant PFC, contributing on average 72% to the effluent water samples, followed by PFOS (16%) and PFDA (9%). The distribution of PFCs in the receiving rivers was greatly impacted by industrial sources. PFOS, PFOA and PFDA were predominant and prevalent in all the river samples, with PFOS detected at the highest concentrations (up to 5.4 microg/L).

Quantum mechanical modeling the emission pattern and polarization of nanoscale light emitting diodes.

PubMed

Wang, Rulin; Zhang, Yu; Bi, Fuzhen; Frauenheim, Thomas; Chen, GuanHua; Yam, ChiYung

2016-07-21

Understanding of the electroluminescence (EL) mechanism in optoelectronic devices is imperative for further optimization of their efficiency and effectiveness. Here, a quantum mechanical approach is formulated for modeling the EL processes in nanoscale light emitting diodes (LED). Based on non-equilibrium Green's function quantum transport equations, interactions with the electromagnetic vacuum environment are included to describe electrically driven light emission in the devices. The presented framework is illustrated by numerical simulations of a silicon nanowire LED device. EL spectra of the nanowire device under different bias voltages are obtained and, more importantly, the radiation pattern and polarization of optical emission can be determined using the current approach. This work is an important step forward towards atomistic quantum mechanical modeling of the electrically induced optical response in nanoscale systems.

High-speed nanoscale characterization of dewetting via dynamic transmission electron microscopy

NASA Astrophysics Data System (ADS)

Hihath, Sahar; Santala, Melissa K.; Campbell, Geoffrey; van Benthem, Klaus

2016-08-01

The dewetting of thin films can occur in either the solid or the liquid state for which different mass transport mechanisms are expected to control morphological changes. Traditionally, dewetting dynamics have been examined on time scales between several seconds to hours, and length scales ranging between nanometers and millimeters. The determination of mass transport mechanisms on the nanoscale, however, requires nanoscale spatial resolution and much shorter time scales. This study reports the high-speed observation of dewetting phenomena for kinetically constrained Ni thin films on crystalline SrTiO3 substrates. Movie-mode Dynamic Transmission Electron Microscopy (DTEM) was used for high-speed image acquisition during thin film dewetting at different temperatures. DTEM imaging confirmed that the initial stages of film agglomeration include edge retraction, hole formation, and growth. Finite element modeling was used to simulate temperature distributions within the DTEM samples after laser irradiation with different energies. For pulsed laser irradiation at 18 μJ, experimentally observed hole growth suggests that Marangoni flow dominates hole formation in the liquid nickel film. After irradiation with 13.8 μJ, however, the observations suggest that dewetting was initiated by nucleation of voids followed by hole growth through solid-state surface diffusion.

High-speed nanoscale characterization of dewetting via dynamic transmission electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hihath, Sahar; Department of Physics, University of California, Davis, 1 Shields Ave., Davis, California 95616; Santala, Melissa K.

The dewetting of thin films can occur in either the solid or the liquid state for which different mass transport mechanisms are expected to control morphological changes. Traditionally, dewetting dynamics have been examined on time scales between several seconds to hours, and length scales ranging between nanometers and millimeters. The determination of mass transport mechanisms on the nanoscale, however, requires nanoscale spatial resolution and much shorter time scales. This study reports the high-speed observation of dewetting phenomena for kinetically constrained Ni thin films on crystalline SrTiO{sub 3} substrates. Movie-mode Dynamic Transmission Electron Microscopy (DTEM) was used for high-speed image acquisitionmore » during thin film dewetting at different temperatures. DTEM imaging confirmed that the initial stages of film agglomeration include edge retraction, hole formation, and growth. Finite element modeling was used to simulate temperature distributions within the DTEM samples after laser irradiation with different energies. For pulsed laser irradiation at 18 μJ, experimentally observed hole growth suggests that Marangoni flow dominates hole formation in the liquid nickel film. After irradiation with 13.8 μJ, however, the observations suggest that dewetting was initiated by nucleation of voids followed by hole growth through solid-state surface diffusion.« less

Generating atomically sharp p -n junctions in graphene and testing quantum electron optics on the nanoscale

NASA Astrophysics Data System (ADS)

Bai, Ke-Ke; Zhou, Jiao-Jiao; Wei, Yi-Cong; Qiao, Jia-Bin; Liu, Yi-Wen; Liu, Hai-Wen; Jiang, Hua; He, Lin

2018-01-01

Creation of high-quality p -n junctions in graphene monolayer is vital in studying many exotic phenomena of massless Dirac fermions. However, even with the fast progress of graphene technology for more than ten years, it remains conspicuously difficult to generate nanoscale and atomically sharp p -n junctions in graphene. Here, we realized nanoscale p -n junctions with atomically sharp boundaries in graphene monolayer by using monolayer vacancy island of Cu surface. The generated sharp p -n junctions with the height as high as 660 meV isolate the graphene above the Cu monolayer vacancy island as nanoscale graphene quantum dots (GQDs) in a continuous graphene sheet. Massless Dirac fermions are confined by the p -n junctions for a finite time to form quasibound states in the GQDs. By using scanning tunneling microscopy, we observe resonances of quasibound states in the GQDs with various sizes and directly visualize effects of geometries of the GQDs on the quantum interference patterns of the quasibound states, which allow us to test the quantum electron optics based on graphene in atomic scale.

Nanoscale thermal transport: Theoretical method and application

NASA Astrophysics Data System (ADS)

Zeng, Yu-Jia; Liu, Yue-Yang; Zhou, Wu-Xing; Chen, Ke-Qiu

2018-03-01

With the size reduction of nanoscale electronic devices, the heat generated by the unit area in integrated circuits will be increasing exponentially, and consequently the thermal management in these devices is a very important issue. In addition, the heat generated by the electronic devices mostly diffuses to the air in the form of waste heat, which makes the thermoelectric energy conversion also an important issue for nowadays. In recent years, the thermal transport properties in nanoscale systems have attracted increasing attention in both experiments and theoretical calculations. In this review, we will discuss various theoretical simulation methods for investigating thermal transport properties and take a glance at several interesting thermal transport phenomena in nanoscale systems. Our emphasizes will lie on the advantage and limitation of calculational method, and the application of nanoscale thermal transport and thermoelectric property. Project supported by the Nation Key Research and Development Program of China (Grant No. 2017YFB0701602) and the National Natural Science Foundation of China (Grant No. 11674092).

An Optoelectronics Research Center

DTIC Science & Technology

2006-03-08

compared with a -2 mm wide slab, -200 nrn thick silicon (SOl) top-only-gate planar MOSFET with otherwise similar doping profiles, gate length and...acoustic phonons, impurity doping profile and surface roughness influences the transport process in the channel regions. The electron mobility in the...application areas including: nanoscale epitaxial growth for semiconductor heterostructures; nanofluidics for biological separations; nanomagnetics for

Dimensionality of nanoscale TiO 2 determines the mechanism of photoinduced electron injection from a CdSe nanoparticle

DOE PAGES

Tafen, De Nyago; Long, Run; Prezhdo, Oleg V.

2014-03-10

Assumptions about electron transfer (ET) mechanisms guide design of catalytic, photovoltaic, and electronic systems. We demonstrate that the mechanism of ET from a CdSe quantum dot (QD) into nanoscale TiO 2 depends on TiO 2 dimensionality. The injection into a TiO 2 QD is adiabatic due to strong donor–acceptor coupling, arising from unsaturated chemical bonds on the QD surface, and low density of acceptor states. In contrast, the injection into a TiO 2 nanobelt (NB) is nonadiabatic, because the state density is high, the donor–acceptor coupling is weak, and multiple phonons accommodate changes in the electronic energy. The CdSe adsorbantmore » breaks symmetry of delocalized TiO 2 NB states, relaxing coupling selection rules, and generating more ET channels. Both mechanisms can give efficient ultrafast injection. Furthermore, the dependence on system properties is very different for the two mechanisms, demonstrating that the fundamental principles leading to efficient charge separation depend strongly on the type of nanoscale material.« less

Dimensionality of nanoscale TiO 2 determines the mechanism of photoinduced electron injection from a CdSe nanoparticle

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tafen, De Nyago; Long, Run; Prezhdo, Oleg V.

Assumptions about electron transfer (ET) mechanisms guide design of catalytic, photovoltaic, and electronic systems. We demonstrate that the mechanism of ET from a CdSe quantum dot (QD) into nanoscale TiO 2 depends on TiO 2 dimensionality. The injection into a TiO 2 QD is adiabatic due to strong donor–acceptor coupling, arising from unsaturated chemical bonds on the QD surface, and low density of acceptor states. In contrast, the injection into a TiO 2 nanobelt (NB) is nonadiabatic, because the state density is high, the donor–acceptor coupling is weak, and multiple phonons accommodate changes in the electronic energy. The CdSe adsorbantmore » breaks symmetry of delocalized TiO 2 NB states, relaxing coupling selection rules, and generating more ET channels. Both mechanisms can give efficient ultrafast injection. Furthermore, the dependence on system properties is very different for the two mechanisms, demonstrating that the fundamental principles leading to efficient charge separation depend strongly on the type of nanoscale material.« less

Fabrication of nanoscale Ga balls via a Coulomb explosion of microscale silica-covered Ga balls by TEM electron-beam irradiation

PubMed Central

Chen, Ying; Huang, Yanli; Liu, Nishuang; Su, Jun; Li, Luying; Gao, Yihua

2015-01-01

Nanoscale Ga particles down to 5 nm were fabricated by an explosion via an in situ electron-beam irradiation on microscale silica-covered Ga balls in a transmission electron microscope. The explosion is confirmed to be a Coulomb explosion because it occurs on the surface rather than in the whole body of the insulating silica-covered Ga micro–balls, and on the pure Ga nano-balls on the edge of carbon film. The ejected particles in the explosion increase their sizes with increasing irradiation time until the stop of the explosion, but decrease their sizes with increasing distance from the original ball. The Coulomb explosion suggests a novel method to fabricate nanoscale metal particles with low melting point. PMID:26100238

Electron-stimulated reactions in nanoscale water films adsorbed on α-Al 2O 3 (0001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petrik, Nikolay G.; Kimmel, Gregory A.

The radiation-induced decomposition and desorption of nanoscale amorphous solid water (D2O) films adsorbed on -Al2O3(0001) surface was studied at low temperature in ultrahigh vacuum using temperature programmed desorption (TPD) and electron stimulated desorption (ESD) with a mono-energetic, low energy electron source. ESD yields of molecular products ( D2, O2 and D¬2O) and the total sputtering yield increased with increasing D2O coverage up to ~15 water monolayers (i.e. ~15 1015 cm-2) to a coverage-independent level for thicker water films. Experiments with isotopically-layered water films (D2O and H2O) demonstrated that the highest water decomposition yields occurred at the interfaces of the nanoscalemore » water films with the alumina substrate and vacuum. However, the increased reactivity of the water/alumina interface is relatively small compared to the enhancements in the non-thermal reactions previously observed at the water/Pt(111) and water/TiO2(110) interfaces. We propose that the relatively low activity of Al2O3(0001) for the radiation-induced production of molecular hydrogen is associated with lower reactivity of this surface with hydrogen atoms, which are likely precursors for the molecular hydrogen.100 eV electrons are stopped in the H 2O portion of the isotopically-layered nanoscale film on α-Al 2O 3(0001) but D 2is produced at the D 2O/alumina interface by mobile electronic excitations and/or hydronium ions.« less

Organic-inorganic hybrid lead halide perovskites for optoelectronic and electronic applications.

PubMed

Zhao, Yixin; Zhu, Kai

2016-02-07

Organic and inorganic hybrid perovskites (e.g., CH(3)NH(3)PbI(3)), with advantages of facile processing, tunable bandgaps, and superior charge-transfer properties, have emerged as a new class of revolutionary optoelectronic semiconductors promising for various applications. Perovskite solar cells constructed with a variety of configurations have demonstrated unprecedented progress in efficiency, reaching about 20% from multiple groups after only several years of active research. A key to this success is the development of various solution-synthesis and film-deposition techniques for controlling the morphology and composition of hybrid perovskites. The rapid progress in material synthesis and device fabrication has also promoted the development of other optoelectronic applications including light-emitting diodes, photodetectors, and transistors. Both experimental and theoretical investigations on organic-inorganic hybrid perovskites have enabled some critical fundamental understandings of this material system. Recent studies have also demonstrated progress in addressing the potential stability issue, which has been identified as a main challenge for future research on halide perovskites. Here, we review recent progress on hybrid perovskites including basic chemical and crystal structures, chemical synthesis of bulk/nanocrystals and thin films with their chemical and physical properties, device configurations, operation principles for various optoelectronic applications (with a focus on solar cells), and photophysics of charge-carrier dynamics. We also discuss the importance of further understanding of the fundamental properties of hybrid perovskites, especially those related to chemical and structural stabilities.

Interplay of Nanoscale, Hybrid P3HT/ZTO Interface on Optoelectronics and Photovoltaic Cells.

PubMed

Lai, Jian-Jhong; Li, Yu-Hsun; Feng, Bo-Rui; Tang, Shiow-Jing; Jian, Wen-Bin; Fu, Chuan-Min; Chen, Jiun-Tai; Wang, Xu; Lee, Pooi See

2017-09-27

Photovoltaic effects in poly(3-hexylthiophene-2,5-diyl) (P3HT) have attracted much attention recently. Here, natively p-type doped P3HT nanofibers and n-type doped zinc tin oxide (ZTO) nanowires are used for making not only field-effect transistors (FETs) but also p-n nanoscale diodes. The hybrid P3HT/ZTO p-n heterojunction shows applications in many directions, and it also facilitates the investigation of photoelectrons and photovoltaic effects on the nanoscale. As for applications, the heterojunction device shows a simultaneously high on/off ratio of n- and p-type FETs, gatable p-n junction diodes, tristate buffer devices, gatable photodetectors, and gatable solar cells. On the other hand, P3HT nanofibers are taken as a photoactive layer and the role played by the p-n heterojunction in the photoelectric and photovoltaic effects is investigated. It is found that the hybrid P3HT/ZTO p-n heterojunction assists in increasing photocurrents and enhancing photovoltaic effects. Through the controllable gating of the heterojunction, we can discuss the background mechanisms of photocurrent generation and photovoltaic energy harvesting.

OSA Proceedings on Ultrafast Electronics and Optoelectronics Held in San Francisco, California on January 25 -27, 1993. Volume 14,

DTIC Science & Technology

1993-01-27

Venkatesan, Zhi- Yuan Shen, Philip Pang, Dennis J. Kountz, and William L Holstein Response of a Nb/A1203/Nb Tunnel Junction to Picosecond Electrical Pulses...Mwhra (edo) 0 1993 Optical Sockty ofAnierica 152 Ultrafast Electronics and Optoelectronics core cladding COW MAD 75. 4UHN 1058nm 50Ps A A optical...Maryland. College Park; Maryland 20742 7hi-Yuan Shen, Philip Pang, Dennis J. Kountz, and William L. Holstein Central Research and Development, Du Pont, PO

Sculpting Nanoscale Functional Channels in Complex Oxides Using Energetic Ions and Electrons

DOE PAGES

Sachan, Ritesh; Zarkadoula, Eva; Ou, Xin; ...

2018-04-26

The formation of metastable phases has attracted significant attention because of their unique properties and potential functionalities. In the present study, we demonstrate the phase conversion of energetic-ion-induced amorphous nanochannels/tracks into a metastable defect fluorite in A 2B 2O 7 structured complex oxides by electron irradiation. Through in situ electron irradiation experiments in a scanning transmission electron microscope, we observe electron-induced epitaxial crystallization of the amorphous nanochannels in Yb 2Ti 2O 7 into the defect fluorite. This energetic-electron-induced phase transformation is attributed to the coupled effect of ionization-induced electronic excitations and local heating, along with subthreshold elastic energy transfers. Wemore » also show the role of ionic radii of A-site cations (A = Yb, Gd, and Sm) and B-site cations (Ti and Zr) in facilitating the electron-beam-induced crystallization of the amorphous phase to the defect-fluorite structure. The formation of the defect-fluorite structure is eased by the decrease in the difference between ionic radii of A- and B-site cations in the lattice. Molecular dynamics simulations of thermal annealing of the amorphous phase nanochannels in A 2B 2O 7 draw parallels to the electron-irradiation-induced crystallization and confirm the role of ionic radii in lowering the barrier for crystallization. Furthermore, these results suggest that employing guided electron irradiation with atomic precision is a useful technique for selected area phase formation in nanoscale printed devices.« less

Sculpting Nanoscale Functional Channels in Complex Oxides Using Energetic Ions and Electrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sachan, Ritesh; Zarkadoula, Eva; Ou, Xin

The formation of metastable phases has attracted significant attention because of their unique properties and potential functionalities. In the present study, we demonstrate the phase conversion of energetic-ion-induced amorphous nanochannels/tracks into a metastable defect fluorite in A 2B 2O 7 structured complex oxides by electron irradiation. Through in situ electron irradiation experiments in a scanning transmission electron microscope, we observe electron-induced epitaxial crystallization of the amorphous nanochannels in Yb 2Ti 2O 7 into the defect fluorite. This energetic-electron-induced phase transformation is attributed to the coupled effect of ionization-induced electronic excitations and local heating, along with subthreshold elastic energy transfers. Wemore » also show the role of ionic radii of A-site cations (A = Yb, Gd, and Sm) and B-site cations (Ti and Zr) in facilitating the electron-beam-induced crystallization of the amorphous phase to the defect-fluorite structure. The formation of the defect-fluorite structure is eased by the decrease in the difference between ionic radii of A- and B-site cations in the lattice. Molecular dynamics simulations of thermal annealing of the amorphous phase nanochannels in A 2B 2O 7 draw parallels to the electron-irradiation-induced crystallization and confirm the role of ionic radii in lowering the barrier for crystallization. Furthermore, these results suggest that employing guided electron irradiation with atomic precision is a useful technique for selected area phase formation in nanoscale printed devices.« less

Nanoscale welding of multi-walled carbon nanotubes by 1064 nm fiber laser

NASA Astrophysics Data System (ADS)

Yuan, Yanping; Liu, Zhi; Zhang, Kaihu; Han, Weina; Chen, Jimin

2018-07-01

This study proposes an efficient approach which uses 1064 nm continuous fiber laser to achieve nanoscale welding of crossed multi-walled carbon nanotubes (MWCNTs). By changing the irradiation time, different quality of nanoscale welding is obtained. The morphology changes are investigated by scanning electron microscope (SEM) and transmission electron microscope (TEM). The experiments demonstrate that better quality of MWCNTs nanoscale welding after 3 s irradiation can be obtained. It is found that new graphene layers between crossed nanotubes induced by laser make the nanoscale welding achieved due to the absorption of laser energy.

Effect of nanoscale size and medium on metal work function in oleylamine-capped gold nanocrystals

NASA Astrophysics Data System (ADS)

Abdellatif, M. H.; Ghosh, S.; Liakos, I.; Scarpellini, A.; Marras, S.; Diaspro, A.; Salerno, M.

2016-02-01

The work function is an important material property with several applications in photonics and optoelectronics. We aimed to characterize the work function of clusters resulting from gold nanocrystals capped with oleylamine surfactant and drop-casted onto gold substrate. We used scanning Kelvin probe microscopy to investigate the work function, and complemented our study mainly with X-ray diffraction and X-ray photoelectron spectroscopy. The oleylamine works as an electron blocking layer through which the electrical conduction takes place by tunneling effect. The surface potential appears to depend on the size of the clusters, which can be ascribed to their difference in effective work function with the substrate. The charge state of gold clusters is discussed in comparison with theory, and their capacitance is calculated from a semi-analytical equation. The results suggest that at the nanoscale the work function is not an intrinsic property of a material but rather depends on the size and morphology of the clusters, including also effects of the surrounding materials.

Correlation between structural and opto-electronic characteristics of crystalline Si microhole arrays for photonic light management

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sontheimer, Tobias, E-mail: tobias.sontheimer@helmholtz-berlin.de; Schnegg, Alexander; Lips, Klaus

2013-11-07

By employing electron paramagnetic resonance spectroscopy, transmission electron microscopy, and optical measurements, we systematically correlate the structural and optical properties with the deep-level defect characteristics of various tailored periodic Si microhole arrays, which are manufactured in an easily scalable and versatile process on nanoimprinted sol-gel coated glass. While tapered microhole arrays in a structured base layer are characterized by partly nanocrystalline features, poor electronic quality with a defect concentration of 10{sup 17} cm{sup −3} and a high optical sub-band gap absorption, planar polycrystalline Si layers perforated with periodic arrays of tapered microholes are composed of a compact crystalline structure and amore » defect concentration in the low 10{sup 16} cm{sup −3} regime. The low defect concentration is equivalent to the one in planar state-of-the-art solid phase crystallized Si films and correlates with a low optical sub-band gap absorption. By complementing the experimental characterization with 3-dimensional finite element simulations, we provide the basis for a computer-aided approach for the low-cost fabrication of novel high-quality structures on large areas featuring tailored opto-electronic properties.« less

Quantification of Nanoscale Density Fluctuations in Biological Cells/Tissues: Inverse Participation Ratio (IPR) Analysis of Transmission Electron Microscopy Images and Implications for Early-Stage Cancer Detection

NASA Astrophysics Data System (ADS)

Pradhan, Prabhakar; Damania, Dhwanil; Joshi, Hrushikesh; Taflove, Allen; Roy, Hemant; Dravid, Vinayak; Backman, Vadim

2010-03-01

We report a study of the nanoscale mass density fluctuations of biological cells and tissues by quantifying their nanoscale light-localization properties. Transmission electron microscope (TEM) images of human cells and tissues are used to construct corresponding effective disordered optical lattices. Light-localization properties are studied by statistical analysis of the inverse participation ratio (IPR) of the eigenfunctions of these optical lattices at the nanoscales. Our results indicate elevation of the nanoscale disorder strength (e.g., refractive index fluctuations) in early carcinogenesis. Importantly, our results demonstrate that the increase in the nanoscale disorder represents the earliest structural alteration in cells undergoing carcinogenesis known to-date. Potential applications of the technique for early stage cancer detection will be discussed.

Laser Opto-Electronic Correlator for Robotic Vision Automated Pattern Recognition

NASA Technical Reports Server (NTRS)

Marzwell, Neville

1995-01-01

A compact laser opto-electronic correlator for pattern recognition has been designed, fabricated, and tested. Specifically it is a translation sensitivity adjustable compact optical correlator (TSACOC) utilizing convergent laser beams for the holographic filter. Its properties and performance, including the location of the correlation peak and the effects of lateral and longitudinal displacements for both filters and input images, are systematically analyzed based on the nonparaxial approximation for the reference beam. The theoretical analyses have been verified in experiments. In applying the TSACOC to important practical problems including fingerprint identification, we have found that the tolerance of the system to the input lateral displacement can be conveniently increased by changing a geometric factor of the system. The system can be compactly packaged using the miniature laser diode sources and can be used in space by the National Aeronautics and Space Administration (NASA) and ground commercial applications which include robotic vision, and industrial inspection of automated quality control operations. The personnel of Standard International will work closely with the Jet Propulsion Laboratory (JPL) to transfer the technology to the commercial market. Prototype systems will be fabricated to test the market and perfect the product. Large production will follow after successful results are achieved.

Interlayer exciton optoelectronics in a 2D heterostructure p–n junction

DOE PAGES

Ross, Jason S.; Rivera, Pasqual; Schaibley, John; ...

2016-12-22

Semiconductor heterostructures are backbones for solid-state-based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures have enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices, including a large binding energy, micron-scale in-plane drift-diffusion, and a long population and valley polarization lifetime. Here, we demonstrate interlayer exciton optoelectronics based on electrostatically defined lateral p–n junctions in a MoSe 2–WSe 2 heterobilayer. Applying a forward bias enablesmore » the first observation of electroluminescence from interlayer excitons. At zero bias, the p–n junction functions as a highly sensitive photodetector, where the wavelength-dependent photocurrent measurement allows the direct observation of resonant optical excitation of the interlayer exciton. The resulting photocurrent amplitude from the interlayer exciton is about 200 times smaller than the resonant excitation of intralayer exciton. This implies that the interlayer exciton oscillator strength is 2 orders of magnitude smaller than that of the intralayer exciton due to the spatial separation of electron and hole to the opposite layers. Lastly, these results lay the foundation for exploiting the interlayer exciton in future 2D heterostructure optoelectronic devices.« less

Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction.

PubMed

Ross, Jason S; Rivera, Pasqual; Schaibley, John; Lee-Wong, Eric; Yu, Hongyi; Taniguchi, Takashi; Watanabe, Kenji; Yan, Jiaqiang; Mandrus, David; Cobden, David; Yao, Wang; Xu, Xiaodong

2017-02-08

Semiconductor heterostructures are backbones for solid-state-based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures have enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices, including a large binding energy, micron-scale in-plane drift-diffusion, and a long population and valley polarization lifetime. Here, we demonstrate interlayer exciton optoelectronics based on electrostatically defined lateral p-n junctions in a MoSe 2 -WSe 2 heterobilayer. Applying a forward bias enables the first observation of electroluminescence from interlayer excitons. At zero bias, the p-n junction functions as a highly sensitive photodetector, where the wavelength-dependent photocurrent measurement allows the direct observation of resonant optical excitation of the interlayer exciton. The resulting photocurrent amplitude from the interlayer exciton is about 200 times smaller than the resonant excitation of intralayer exciton. This implies that the interlayer exciton oscillator strength is 2 orders of magnitude smaller than that of the intralayer exciton due to the spatial separation of electron and hole to the opposite layers. These results lay the foundation for exploiting the interlayer exciton in future 2D heterostructure optoelectronic devices.

Growth and Characterisation of GaAs/AlGaAs Core-shell Nanowires for Optoelectronic Device Applications

NASA Astrophysics Data System (ADS)

Jiang, Nian

III-V semiconductor nanowires have been investigated as key components for future electronic and optoelectronic devices and systems due to their direct band gap and high electron mobility. Amongst the III-V semiconductors, the planar GaAs material system has been extensively studied and used in industries. Accordingly, GaAs nanowires are the prime candidates for nano-scale devices. However, the electronic performance of GaAs nanowires has yet to match that of state-of-the-art planar GaAs devices. The present deficiency of GaAs nanowires is typically attributed to the large surface-to- volume ratio and the tendency for non-radiative recombination centres to form at the surface. The favoured solution of this problem is by coating GaAs nanowires with AlGaAs shells, which replaces the GaAs surface with GaAs/AlGaAs interface. This thesis presents a systematic study of GaAs/AlGaAs core-shell nanowires grown by metal organic chemical vapour deposition (MOCVD), including understanding the growth, and characterisation of their structural and optical properties. The structures of the nanowires were mainly studied by scanning electron microscopy and transmis- sion electron microscopy (TEM). A procedure of microtomy was developed to prepare the cross-sectional samples for the TEM studies. The optical properties were charac- terised by photoluminescence (PL) spectroscopy. Carrier lifetimes were measured by time-resolved PL. The growth of AlGaAs shell was optimised to obtain the best optical properties, e.g. the strongest PL emission and the longest minority carrier lifetimes. (Abstract shortened by ProQuest.).

International Seminar on Laser and Opto-Electronic Technology in Industry: State-of-the-Art Review, Xiamen, People's Republic of China, June 25-28, 1986, Proceedings

NASA Astrophysics Data System (ADS)

Ke, Jingtang; Pryputniewicz, Ryszard J.

Various papers on the state of the art in laser and optoelectronic technology in industry are presented. Individual topics addressed include: wavelength compensation for holographic optical element, optoelectronic techniques for measurement and inspection, new optical measurement methods in Western Europe, applications of coherent optics at ISL, imaging techniques for gas turbine development, the Rolls-Royce experience with industrial holography, panoramic holocamera for tube and borehole inspection, optical characterization of electronic materials, optical strain measurement of rotating components, quantitative interpretation of holograms and specklegrams, laser speckle technique for hydraulic structural model test, study of holospeckle interferometry, common path shearing fringe scanning interferometer, and laser interferometry applied to nondestructive testing of tires.

Method of fabricating an optoelectronic device having a bulk heterojunction

DOEpatents

Shtein, Max [Princeton, NJ; Yang, Fan [Princeton, NJ; Forrest, Stephen R [Princeton, NJ

2008-09-02

A method of fabricating an organic optoelectronic device having a bulk heterojunction comprises the steps of: depositing a first layer over a first electrode by organic vapor phase deposition, wherein the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer, wherein the interface of the second layer on the first layer forms a bulk heterojunction; and depositing a second electrode over the second layer to form the optoelectronic device. In another embodiment, a first layer having protrusions is deposited over the first electrode, wherein the first layer comprises a first organic small molecule material. For example, when the first layer is an electron donor layer, the first electrode is an anode, the second layer is an electron acceptor layer, and the second electrode is a cathode. As a further example, when the first layer is an electron acceptor layer, the first electrode is a cathode, the second layer is an electron donor layer, and the second electrode is an anode.

Understanding of the Formation of Micro/Nanoscale Structures on Metal Surfaces by Ultrafast Pulse Laser Processing

NASA Astrophysics Data System (ADS)

Peng, Edwin

In the recent decades, there has been much interest in functionalized surfaces produced by ultrafast laser processing. Using pulse lasers with nanosecond to femtosecond time scale, a wide range of micro/nanoscale structures can be produced on virtually all metal surfaces. These surface structures create special optoelectronic, wetting, and tribological properties with a diverse range of potential applications. The formation mechanisms of these surface structures, especially microscale, mound-like structures, are not fully understood. There has been wide study of ultrafast laser processing of metals. Yet, the proposed formation models present in current literature often lack sufficient experimental verification. Specifically, many studies are limited to surface characterization, e.g. scanning electron microscopy of the surfaces of these micro/nanoscale structures. Valuable insight into the physical processes responsible for formation can be obtained if standard material science characterization methods are performed across the entire mound. In our study, we examined mound-like structures formed on three metal alloys. Using cross section and 3D slice and view operations by a dual beam scanning electron microscope-focused ion beam, the interior microstructures of these mounds are revealed. Taking advantage of amorphous phase formation during laser processing of Ni60Nb40, we verified the fluence-dependent formation model: mounds formed at low fluence are primarily the result of ablation while mounds formed at high fluence are formed by both ablation and rapid resolidification by hydrodynamical fluid flow. For the first time, we revealed the cross section of a wide variety of mound-like structures on titanium surfaces. The increased contribution to mound formation by fluid flow with increasing fluence was observed. Finally, a 3D scanning electron microscopy technique was applied for mounds produced on silver surface by delayed-pulse laser processing. The interior

Electronic and optoelectronic materials and devices inspired by nature

NASA Astrophysics Data System (ADS)

Meredith, P.; Bettinger, C. J.; Irimia-Vladu, M.; Mostert, A. B.; Schwenn, P. E.

2013-03-01

Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

Metal oxides for optoelectronic applications.

PubMed

Yu, Xinge; Marks, Tobin J; Facchetti, Antonio

2016-04-01

Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

Metal oxides for optoelectronic applications

NASA Astrophysics Data System (ADS)

Yu, Xinge; Marks, Tobin J.; Facchetti, Antonio

2016-04-01

Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients in traditional ceramics. MO semiconductors are strikingly different from conventional inorganic semiconductors such as silicon and III-V compounds with respect to materials design concepts, electronic structure, charge transport mechanisms, defect states, thin-film processing and optoelectronic properties, thereby enabling both conventional and completely new functions. Recently, remarkable advances in MO semiconductors for electronics have been achieved, including the discovery and characterization of new transparent conducting oxides, realization of p-type along with traditional n-type MO semiconductors for transistors, p-n junctions and complementary circuits, formulations for printing MO electronics and, most importantly, commercialization of amorphous oxide semiconductors for flat panel displays. This Review surveys the uniqueness and universality of MOs versus other unconventional electronic materials in terms of materials chemistry and physics, electronic characteristics, thin-film fabrication strategies and selected applications in thin-film transistors, solar cells, diodes and memories.

Intriguing optoelectronic properties of metal halide perovskites

DOE PAGES

Manser, Joseph S.; Christians, Jeffrey A.; Kamat, Prashant V.

2016-06-21

Here, a new chapter in the long and distinguished history of perovskites is being written with the breakthrough success of metal halide perovskites (MHPs) as solution-processed photovoltaic (PV) absorbers. The current surge in MHP research has largely arisen out of their rapid progress in PV devices; however, these materials are potentially suitable for a diverse array of optoelectronic applications. Like oxide perovskites, MHPs have ABX 3 stoichiometry, where A and B are cations and X is a halide anion. Here, the underlying physical and photophysical properties of inorganic (A = inorganic) and hybrid organic-inorganic (A = organic) MHPs are reviewedmore » with an eye toward their potential application in emerging optoelectronic technologies. Significant attention is given to the prototypical compound methylammonium lead iodide (CH 3NH 3PbI 3) due to the preponderance of experimental and theoretical studies surrounding this material. We also discuss other salient MHP systems, including 2- dimensional compounds, where relevant. More specifically, this review is a critical account of the interrelation between MHP electronic structure, absorption, emission, carrier dynamics and transport, and other relevant photophysical processes that have propelled these materials to the forefront of modern optoelectronics research.« less

Realization of Ultra-High Spectral Purity with the Opto-Electronic Oscillator

NASA Technical Reports Server (NTRS)

Yao, Steve; Maleki, Lute; Ji, Yu; Dick, John

2000-01-01

Recent results with the Opto-Electronic Oscillator (OEO) have led to the realization of very high spectral purity. Experimental results have produced a performance characterized by a noise as low as by -50 dBc/Hz at 10 Hz for a 10 GHz OEO. The unit was built in a compact package containing an integrated DFB laser and the modulator. This performance is significant because the oscillator is free running, and since the noise in an OEO is independent of the oscillation frequency, the same result can also be obtained at higher frequencies. The result also demonstrates that high frequency, high performance, low cost, and miniature OEO can be realized with the integrated photonic technology. We have also developed a novel carrier suppression technique to reduce the 1/f phase noise of the oscillator even further. The technique is based on the use of a long fiber delay, in place of the high Q cavity, to implement carrier suppression. Our preliminary experimental results indicate an extra 10 to 20 dB phase noise reduction of the OEO with this novel technique. Further noise reduction beyond this value is expected with improved circuit design and longer reference fiber.

Optoelectronics for electrical and computer engineering students

NASA Astrophysics Data System (ADS)

Chua, Soo-Jin; Jalil, Mansoor

2002-05-01

We describe the contents of an advanced undergraduate course on Optoelectronics at the Department of Electrical and Computer Engineering, National University of Singapore. The emphasis has changed over the years to keep abreast of the development in the field but the broad features remain the same. A multidisciplinary approach is taken, incorporating physics, materials science and engineering concepts to explain the operation of optoelectronic components, and their application in display, communications and consumer electronics. The course comprises of 36 hours of lectures and two experiments, and covers basic radiometry and photometry, photoemitters (LEDs and lasers), photodetectors, and liquid crystal displays. The main aim of the course is to equip the student with the requisite theoretical and practical knowledge for participation in the photonics industry and for postgraduate research for students who are so inclined.

Real-Time Nanoscale Open-Circuit Voltage Dynamics of Perovskite Solar Cells.

PubMed

Garrett, Joseph L; Tennyson, Elizabeth M; Hu, Miao; Huang, Jinsong; Munday, Jeremy N; Leite, Marina S

2017-04-12

Hybrid organic-inorganic perovskites based on methylammonium lead (MAPbI 3 ) are an emerging material with great potential for high-performance and low-cost photovoltaics. However, for perovskites to become a competitive and reliable solar cell technology their instability and spatial variation must be understood and controlled. While the macroscopic characterization of the devices as a function of time is very informative, a nanoscale identification of their real-time local optoelectronic response is still missing. Here, we implement a four-dimensional imaging method through illuminated heterodyne Kelvin probe force microscopy to spatially (<50 nm) and temporally (16 s/scan) resolve the voltage of perovskite solar cells in a low relative humidity environment. Local open-circuit voltage (V oc ) images show nanoscale sites with voltage variation >300 mV under 1-sun illumination. Surprisingly, regions of voltage that relax in seconds and after several minutes consistently coexist. Time-dependent changes of the local V oc are likely due to intragrain ion migration and are reversible at low injection level. These results show for the first time the real-time transient behavior of the V oc in perovskite solar cells at the nanoscale. Understanding and controlling the light-induced electrical changes that affect device performance are critical to the further development of stable perovskite-based solar technologies.

First-principles analysis of structural and opto-electronic properties of indium tin oxide

NASA Astrophysics Data System (ADS)

Tripathi, Madhvendra Nath; Shida, Kazuhito; Sahara, Ryoji; Mizuseki, Hiroshi; Kawazoe, Yoshiyuki

2012-05-01

Density functional theory (DFT) and DFT + U (DFT with on-site Coulomb repulsion corrections) calculations have been carried out to study the structural and opto-electronic properties of indium tin oxide (ITO) for both the oxidized and reduced environment conditions. Some of the results obtained by DFT calculations differ from the experimental observations, such as uncertain indication for the site preference of tin atom to replace indium atom at b-site or d-site, underestimation of local inward relaxation in the first oxygen polyhedra around tin atom, and also the improper estimation of electronic density of states and hence resulting in an inappropriate optical spectra of ITO. These discrepancies of theoretical outcomes with experimental observations in ITO arise mainly due to the underestimation of the cationic 4d levels within standard DFT calculations. Henceforth, the inclusion of on-site corrections within DFT + U framework significantly modifies the theoretical results in better agreement to the experimental observations. Within this framework, our calculations show that the indium b-site is preferential site over d-site for tin atom substitution in indium oxide under both the oxidized and reduced conditions. Moreover, the calculated average inward relaxation value of 0.16 Å around tin atom is in good agreement with the experimental value of 0.18 Å. Furthermore, DFT + U significantly modify the electronic structure and consequently induce modifications in the calculated optical spectra of ITO.

Inkjet-printed optoelectronics.

PubMed

Zhan, Zhaoyao; An, Jianing; Wei, Yuefan; Tran, Van Thai; Du, Hejun

2017-01-19

Inkjet printing is a powerful and cost-effective technique for deposition of liquid inks with high accuracy, which is not only of great significance for graphic applications but also has enormous potential for the direct printing of optoelectronic devices. This review highlights a comprehensive overview of the progress that has been made in optoelectronics fabrication by the inkjet printing technique. The first part briefly covers the droplet-generation process in the nozzles of printheads and the physical properties affecting droplet formation and the profiles of the printed patterns. The second section outlines the recent activities related to applications of inkjet printing in optoelectronics fabrication including solar cells, light-emitting diodes, photodetectors and transparent electrodes. In each application field, the challenges with the inkjet printing process and the possible solutions are discussed before a few remarks. In the last section, a brief summary on the progress of inkjet printing fabrication of optoelectronics and an outlook for future research effort are presented.

Advances in graphene-based optoelectronics, plasmonics and photonics

NASA Astrophysics Data System (ADS)

Nguyen, Bich Ha; Hieu Nguyen, Van

2016-03-01

Since the early works on graphene it has been remarked that graphene is a marvelous electronic material. Soon after its discovery, graphene was efficiently utilized in the fabrication of optoelectronic, plasmonic and photonic devices, including graphene-based Schottky junction solar cells. The present work is a review of the progress in the experimental research on graphene-based optoelectronics, plasmonics and photonics, with the emphasis on recent advances. The main graphene-based optoelectronic devices presented in this review are photodetectors and modulators. In the area of graphene-based plasmonics, a review of the plasmonic nanostructures enhancing or tuning graphene-light interaction, as well as of graphene plasmons is presented. In the area of graphene-based photonics, we report progress on fabrication of different types of graphene quantum dots as well as functionalized graphene and graphene oxide, the research on the photoluminescence and fluorescence of graphene nanostructures as well as on the energy exchange between graphene and semiconductor quantum dots. In particular, the promising achievements of research on graphene-based Schottky junction solar cells is presented.

Modelling of optoelectronic circuits based on resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.

2017-08-01

Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics.

PubMed

Xia, Fengnian; Wang, Han; Jia, Yichen

2014-07-21

Graphene and transition metal dichalcogenides (TMDCs) are the two major types of layered materials under intensive investigation. However, the zero-bandgap nature of graphene and the relatively low mobility in TMDCs limit their applications. Here we reintroduce black phosphorus (BP), the most stable allotrope of phosphorus with strong intrinsic in-plane anisotropy, to the layered-material family. For 15-nm-thick BP, we measure a Hall mobility of 1,000 and 600 cm(2)V(-1)s(-1) for holes along the light (x) and heavy (y) effective mass directions at 120 K. BP thin films also exhibit large and anisotropic in-plane optical conductivity from 2 to 5 μm. Field-effect transistors using 5 nm BP along x direction exhibit an on-off current ratio exceeding 10(5), a field-effect mobility of 205 cm(2)V(-1)s(-1), and good current saturation characteristics all at room temperature. BP shows great potential for thin-film electronics, infrared optoelectronics and novel devices in which anisotropic properties are desirable.

Mechanisms of transport and electron transfer at conductive polymer/liquid interfaces

NASA Astrophysics Data System (ADS)

Ratcliff, Erin

Organic semiconductors (OSCs) have incredible prospects for next-generation, flexible electronic devices including bioelectronics, thermoelectrics, opto-electronics, and energy storage and conversion devices. Yet many fundamental challenges still exist. First, solution processing prohibits definitive control over microstructure, which is fundamental for controlling electrical, ionic, and thermal transport properties. Second, OSCs generally suffer from poor electrical conductivities due to a combination of low carriers and low mobility. Third, polymeric semiconductors have potential-dependent, dynamically evolving electronic and chemical states, leading to complex interfacial charge transfer properties in contact with liquids. This talk will focus on the use of alternative synthetic strategies of oxidative chemical vapor deposition and electrochemical deposition to control physical, electronic, and chemical structure. We couple our synthetic efforts with energy-, time-, and spatially resolved spectroelectrochemical and microscopy techniques to understand the critical interfacial chemistry-microstructure-property relationships: first at the macroscale, and then moving towards the nanoscale. In particular, approaches to better understand electron transfer events at polymer/liquid interfaces as a function of: 1.) chemical composition; 2.) electronic density of states (DOS); and 3.) crystallinity and microstructure will be discussed.

Effect of doping of tin on optoelectronic properties of indium oxide: DFT study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tripathi, Madhvendra Nath, E-mail: ommadhav27@gmail.com

2015-06-24

Indium tin oxide is widely used transparent conductor. Experimentally observed that 6% tin doping in indium oxide is suitable for optoelectronic applications and more doping beyond this limit degrades the optoelectronic property. The stoichiometry (In{sub 32-x}Sn{sub x}O{sub 48+x/2}; x=0-6) is taken to understand the change in lattice parameter, electronic structure, and optical property of ITO. It is observed that lattice parameter increases and becomes constant after 6% tin doping that is in good agreement of the experimental observation. The electronic structure calculation shows that the high tin doping in indium oxide adversely affects the dispersive nature of the bottom ofmore » conduction band of pure indium oxide and decreases the carrier mobility. Optical calculations show that transmittance goes down upto 60% for the tin concentration more than 6%. The present paper shows that how more than 6% tin doping in indium oxide adversely affects the optoelectronic property of ITO.« less

Effect of doping of tin on optoelectronic properties of indium oxide: DFT study

NASA Astrophysics Data System (ADS)

Tripathi, Madhvendra Nath

2015-06-01

Indium tin oxide is widely used transparent conductor. Experimentally observed that 6% tin doping in indium oxide is suitable for optoelectronic applications and more doping beyond this limit degrades the optoelectronic property. The stoichiometry (In32-xSnxO48+x/2; x=0-6) is taken to understand the change in lattice parameter, electronic structure, and optical property of ITO. It is observed that lattice parameter increases and becomes constant after 6% tin doping that is in good agreement of the experimental observation. The electronic structure calculation shows that the high tin doping in indium oxide adversely affects the dispersive nature of the bottom of conduction band of pure indium oxide and decreases the carrier mobility. Optical calculations show that transmittance goes down upto 60% for the tin concentration more than 6%. The present paper shows that how more than 6% tin doping in indium oxide adversely affects the optoelectronic property of ITO.

A Demo opto-electronic power source based on single-walled carbon nanotube sheets.

PubMed

Hu, Chunhua; Liu, Changhong; Chen, Luzhuo; Meng, Chuizhou; Fan, Shoushan

2010-08-24

It is known that single-walled carbon nanotubes (SWNTs) strongly absorb light, especially in the near-infrared (NIR) region, and convert it into heat. In fact, SWNTs also have considerable ability to convert heat into electricity. In this work, we show that SWNT sheets made from as-grown SWNT arrays display a large positive thermoelectric coefficient (p-type). We designed a simple SWNT device to convert illuminating NIR light directly into a notable voltage output, which was verified by experimental tests. Furthermore, by a simple functionalization step, the p- to n-type transition was conveniently achieved for the SWNT sheets. By integrating p- and n-type elements in series, we constructed a novel NIR opto-electronic power source, which outputs a large voltage that sums over the output of every single element. Additionally, the output of the demo device has shown a good linear relationship with NIR light power density, favorable for IR sensors.

Direct nanoscale imaging of evolving electric field domains in quantum structures.

PubMed

Dhar, Rudra Sankar; Razavipour, Seyed Ghasem; Dupont, Emmanuel; Xu, Chao; Laframboise, Sylvain; Wasilewski, Zbig; Hu, Qing; Ban, Dayan

2014-11-28

The external performance of quantum optoelectronic devices is governed by the spatial profiles of electrons and potentials within the active regions of these devices. For example, in quantum cascade lasers (QCLs), the electric field domain (EFD) hypothesis posits that the potential distribution might be simultaneously spatially nonuniform and temporally unstable. Unfortunately, there exists no prior means of probing the inner potential profile directly. Here we report the nanoscale measured electric potential distribution inside operating QCLs by using scanning voltage microscopy at a cryogenic temperature. We prove that, per the EFD hypothesis, the multi-quantum-well active region is indeed divided into multiple sections having distinctly different electric fields. The electric field across these serially-stacked quantum cascade modules does not continuously increase in proportion to gradual increases in the applied device bias, but rather hops between discrete values that are related to tunneling resonances. We also report the evolution of EFDs, finding that an incremental change in device bias leads to a hopping-style shift in the EFD boundary--the higher electric field domain expands at least one module each step at the expense of the lower field domain within the active region.

Direct Nanoscale Imaging of Evolving Electric Field Domains in Quantum Structures

PubMed Central

Dhar, Rudra Sankar; Razavipour, Seyed Ghasem; Dupont, Emmanuel; Xu, Chao; Laframboise, Sylvain; Wasilewski, Zbig; Hu, Qing; Ban, Dayan

2014-01-01

The external performance of quantum optoelectronic devices is governed by the spatial profiles of electrons and potentials within the active regions of these devices. For example, in quantum cascade lasers (QCLs), the electric field domain (EFD) hypothesis posits that the potential distribution might be simultaneously spatially nonuniform and temporally unstable. Unfortunately, there exists no prior means of probing the inner potential profile directly. Here we report the nanoscale measured electric potential distribution inside operating QCLs by using scanning voltage microscopy at a cryogenic temperature. We prove that, per the EFD hypothesis, the multi-quantum-well active region is indeed divided into multiple sections having distinctly different electric fields. The electric field across these serially-stacked quantum cascade modules does not continuously increase in proportion to gradual increases in the applied device bias, but rather hops between discrete values that are related to tunneling resonances. We also report the evolution of EFDs, finding that an incremental change in device bias leads to a hopping-style shift in the EFD boundary – the higher electric field domain expands at least one module each step at the expense of the lower field domain within the active region. PMID:25431158

Direct Nanoscale Imaging of Evolving Electric Field Domains in Quantum Structures

NASA Astrophysics Data System (ADS)

Dhar, Rudra Sankar; Razavipour, Seyed Ghasem; Dupont, Emmanuel; Xu, Chao; Laframboise, Sylvain; Wasilewski, Zbig; Hu, Qing; Ban, Dayan

2014-11-01

The external performance of quantum optoelectronic devices is governed by the spatial profiles of electrons and potentials within the active regions of these devices. For example, in quantum cascade lasers (QCLs), the electric field domain (EFD) hypothesis posits that the potential distribution might be simultaneously spatially nonuniform and temporally unstable. Unfortunately, there exists no prior means of probing the inner potential profile directly. Here we report the nanoscale measured electric potential distribution inside operating QCLs by using scanning voltage microscopy at a cryogenic temperature. We prove that, per the EFD hypothesis, the multi-quantum-well active region is indeed divided into multiple sections having distinctly different electric fields. The electric field across these serially-stacked quantum cascade modules does not continuously increase in proportion to gradual increases in the applied device bias, but rather hops between discrete values that are related to tunneling resonances. We also report the evolution of EFDs, finding that an incremental change in device bias leads to a hopping-style shift in the EFD boundary - the higher electric field domain expands at least one module each step at the expense of the lower field domain within the active region.

PREFACE: Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications II (Symposium K, E-MRS 2009 Spring Meeting)

NASA Astrophysics Data System (ADS)

Nötzel, Richard

2009-07-01

This volume of IOP Conference Series: Materials Science and Engineering contains papers that were presented at the special symposium K at the EMRS 2009 Spring Meeting held 8-12 June in Strasbourg, France, which was entitled 'Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications II'. Thanks to the broad interest a large variety of quantum dots and quantum wires and related nanostructures and their application in devices could be covered. There was significant progress in the epitaxial growth of semiconductor quantum dots seen in the operation of high-power, as well as mode locked laser diodes and the lateral positioning of quantum dots on patterned substrates or by selective area growth for future single quantum dot based optoelectronic and electronic devices. In the field of semiconductor nanowires high quality, almost twin free structures are now available together with a new degree of freedom for band structure engineering based on alternation of the crystal structure. In the search for Si based light emitting structures, nanocrystals and miniband-related near infrared luminescence of Si/Ge quantum dot superlattices with high quantum efficiency were reported. These highlights, among others, and the engaged discussions of the scientists, engineers and students brought together at the symposium emphasize how active the field of semiconductor nanostructures and their applications in devices is, so that we can look forward to the progress to come. Guest Editor Richard Nötzel COBRA Research Institute Department of Applied Physics Eindhoven University of Technology 5600 MB Eindhoven The Netherlands Tel.: +31 40 247 2047; fax: +31 40 246 1339 E-mail address: r.noetzel@tue.nl

Nanoscale magnetic characterization of tunneling magnetoresistance spin valve head by electron holography.

PubMed

Park, Hyun Soon; Hirata, Kei; Yanagisawa, Keiichi; Ishida, Yoichi; Matsuda, Tsuyoshi; Shindo, Daisuke; Tonomura, Akira

2012-12-07

Nanostructured magnetic materials play an important role in increasing miniaturized devices. For the studies of their magnetic properties and behaviors, nanoscale imaging of magnetic field is indispensible. Here, using electron holography, the magnetization distribution of a TMR spin valve head of commercial design is investigated without and with a magnetic field applied. Characterized is the magnetic flux distribution in complex hetero-nanostructures by averaging the phase images and separating their component magnetic vectors and electric potentials. The magnetic flux densities of the NiFe (shield and 5 nm-free layers) and the CoPt (20 nm-bias layer) are estimated to be 1.0 T and 0.9 T, respectively. The changes in the magnetization distribution of the shield, bias, and free layers are visualized in situ for an applied field of 14 kOe. This study demonstrates the promise of electron holography for characterizing the magnetic properties of hetero-interfaces, nanostructures, and catalysts. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Standard cell-based implementation of a digital optoelectronic neural-network hardware.

PubMed

Maier, K D; Beckstein, C; Blickhan, R; Erhard, W

2001-03-10

A standard cell-based implementation of a digital optoelectronic neural-network architecture is presented. The overall structure of the multilayer perceptron network that was used, the optoelectronic interconnection system between the layers, and all components required in each layer are defined. The design process from VHDL-based modeling from synthesis and partly automatic placing and routing to the final editing of one layer of the circuit of the multilayer perceptrons are described. A suitable approach for the standard cell-based design of optoelectronic systems is presented, and shortcomings of the design tool that was used are pointed out. The layout for the microelectronic circuit of one layer in a multilayer perceptron neural network with a performance potential 1 magnitude higher than neural networks that are purely electronic based has been successfully designed.

Measure of horizontal and vertical displacement of the acromioclavicular joint after cutting ligament using X-ray and opto-electronic system.

PubMed

Rochcongar, Goulven; Emily, Sébastien; Lebel, Benoit; Pineau, Vincent; Burdin, Gilles; Hulet, Christophe

2012-09-01

Surgical versus orthopedic treatments of acromioclavicular disjunction are still debated. The aim of this study was to measure horizontal and vertical acromion's displacement after cutting the ligament using standard X-ray and an opto-electronic system on cadaver. Ten cadaveric shoulders were studied. A sequential ligament's section was operated by arthroscopy. The sequence of cutting was chosen to fit with Rockwood's grade. The displacement of the acromion was measured on standard X-ray and with an opto-electronic system allowing measuring of the horizontal displacement. Statistical comparisons were performed using a paired Student's t test with significance set at p < 0.05. Cutting the coracoclavicular ligament and delto-trapezius muscles cause a statistical downer displacement of the acromion, but not after sectioning the acromioclavicular ligament. The contact surface between the acromion and the clavicle decreases statistically after sectioning the acromioclavicular ligament and the coracoclavicular ligament with no effect of sectioning the delto-trapezius muscles. Those results are superposing with those dealing with the anterior translation. The measure concerning the acromioclavicular distance and the coracoclavicular distance are superposing with those of Rockwood. However, there is a significant horizontal translation after cutting the acromioclavicular ligament. Taking into account this displacement, it may be interesting to choose either surgical or orthopedic treatment. There is a correlation between anatomical damage and importance of instability. Horizontal instability is misevaluated in clinical practice.

Method to determine thermal profiles of nanoscale circuitry

DOEpatents

Zettl, Alexander K; Begtrup, Gavi E

2013-04-30

A platform that can measure the thermal profiles of devices with nanoscale resolution has been developed. The system measures the local temperature by using an array of nanoscale thermometers. This process can be observed in real time using a high resolution imagining technique such as electron microscopy. The platform can operate at extremely high temperatures.

Electron-stimulated reactions in nanoscale water films adsorbed on α-Al 2 O 3 (0001)

DOE PAGES

Petrik, Nikolay G.; Kimmel, Greg A.

2018-04-11

The radiation-induced decomposition and desorption of nanoscale amorphous solid water (D 2O) films adsorbed on an α-Al 2O 3(0001) surface was studied at low temperature in ultrahigh vacuum using temperature programmed desorption (TPD) and electron stimulated desorption (ESD) with a mono-energetic, low energy electron source. ESD yields of molecular products (D 2, O 2 and D 2O) and the total sputtering yield increased with increasing D 2O coverage up to ~15 water monolayers (i.e. ~15 x 10 15 cm -2) to a coverage-independent level for thicker water films. Experiments with isotopically-layered water films (D 2O and H 2O) demonstrated thatmore » the highest water decomposition yields occurred at the interfaces of the nanoscale water films with the alumina substrate and vacuum. However, the increased reactivity of the water/alumina interface is relatively small compared to the enhancements in the non-thermal reactions previously observed at the water/Pt(111) and water/TiO 2(110) interfaces. Here, we propose that the relatively low activity of Al 2O 3(0001) for the radiation-induced production of molecular hydrogen is associated with lower reactivity of this surface with hydrogen atoms, which are likely precursors for the formation of molecular hydrogen.« less

Electron-stimulated reactions in nanoscale water films adsorbed on α-Al 2 O 3 (0001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petrik, Nikolay G.; Kimmel, Greg A.

The radiation-induced decomposition and desorption of nanoscale amorphous solid water (D 2O) films adsorbed on an α-Al 2O 3(0001) surface was studied at low temperature in ultrahigh vacuum using temperature programmed desorption (TPD) and electron stimulated desorption (ESD) with a mono-energetic, low energy electron source. ESD yields of molecular products (D 2, O 2 and D 2O) and the total sputtering yield increased with increasing D 2O coverage up to ~15 water monolayers (i.e. ~15 x 10 15 cm -2) to a coverage-independent level for thicker water films. Experiments with isotopically-layered water films (D 2O and H 2O) demonstrated thatmore » the highest water decomposition yields occurred at the interfaces of the nanoscale water films with the alumina substrate and vacuum. However, the increased reactivity of the water/alumina interface is relatively small compared to the enhancements in the non-thermal reactions previously observed at the water/Pt(111) and water/TiO 2(110) interfaces. Here, we propose that the relatively low activity of Al 2O 3(0001) for the radiation-induced production of molecular hydrogen is associated with lower reactivity of this surface with hydrogen atoms, which are likely precursors for the formation of molecular hydrogen.« less

Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures.

PubMed

Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

2016-10-27

Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures.

Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures

PubMed Central

Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

2016-01-01

Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures. PMID:28335321

Shallow halogen vacancies in halide optoelectronic materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Hongliang; Du, Mao -Hua

2014-11-05

Halogen vacancies (V H) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep V H contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., CH 3NH 3PbI 3 and TlBr. Both CH 3NH 3PbI 3 and TlBr have been found to have shallow V H, in contrast to commonly seen deep V H in halides. In this paper, several halide optoelectronic materials, i.e., CH 3NH 3PbI 3, CH 3NH 3SnI 3 (photovoltaic materials), TlBr, and CsPbBrmore » 3, (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether V H is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of ns 2 ions both play important roles in creating shallow V H in halides such as CH 3NH 3PbI 3, CH 3NH 3SnI 3, and TlBr. The key to identifying halides with shallow V H is to find the right crystal structures and compounds that suppress cation orbital hybridization at V H, such as those with long cation-cation distances and low anion coordination numbers, and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at V H. Furthermore, the results of this paper provide insight and guidance to identifying halides with shallow V H as good electronic and optoelectronic materials.« less

Shallow halogen vacancies in halide optoelectronic materials

NASA Astrophysics Data System (ADS)

Shi, Hongliang; Du, Mao-Hua

2014-11-01

Halogen vacancies (VH ) are usually deep color centers (F centers) in halides and can act as major electron traps or recombination centers. The deep VH contributes to the typically poor carrier transport properties in halides. However, several halides have recently emerged as excellent optoelectronic materials, e.g., C H3N H3Pb I3 and TlBr. Both C H3N H3Pb I3 and TlBr have been found to have shallow VH , in contrast to commonly seen deep VH in halides. In this paper, several halide optoelectronic materials, i.e., C H3N H3Pb I3 , C H3N H3Sn I3 (photovoltaic materials), TlBr, and CsPbB r3 (gamma-ray detection materials) are studied to understand the material chemistry and structure that determine whether VH is a shallow or deep defect in a halide material. It is found that crystal structure and chemistry of n s2 ions both play important roles in creating shallow VH in halides such as C H3N H3Pb I3 , C H3N H3Sn I3 , and TlBr. The key to identifying halides with shallow VH is to find the right crystal structures and compounds that suppress cation orbital hybridization at VH , such as those with large cation-cation distances and low anion coordination numbers and those with crystal symmetry that prevents strong hybridization of cation dangling bond orbitals at VH . The results of this paper provide insight and guidance to identifying halides with shallow VH as good electronic and optoelectronic materials.

Microstructure and opto-electronic properties of Sn-rich Au-Sn diffusive solders

NASA Astrophysics Data System (ADS)

Rerek, T.; Skowronski, L.; Kobierski, M.; Naparty, M. K.; Derkowska-Zielinska, B.

2018-09-01

Microstructural and opto-electronic properties of Au ⧹ Sn and Sn ⧹ Au bilayers, obtained by sequential evaporating of metals on the Si substrate, were investigated by means of atomic force microscopy, X-ray diffraction and spectroscopic ellipsometry. Thicknesses of individual films were established to obtain the atomic ratio of Au:Sn atoms 1:1, 1:2 and 1:4, which were favor the formation of AuSn, AuSn2 and AuSn4, respectively. However, the produced intermatallic compounds were detected as AuSn and AuSn2. Additionally, the unbounded Sn was found. The sequence of deposition of Au and Sn films as well as their thickness strongly affect on the composition, microstructure, optical and electrical properties of the produced layers. The Au ⧹ Sn (Sn on the top) layers were more smooth than Sn ⧹ Au (Au on the top) films. Generally, the Au ⧹ Sn layers exhibit a better electrical and optical properties than Sn ⧹ Au films. The optical parameters: plasma energy, free-carrier damping, mean relaxation time of conduction electrons and optical resistivity were determined from the effective complex dielectric function of the formed Au, Sn and Au-Sn films. The optical resistivity values are in the range from 17.8 μΩ cm to 85.1 μΩ cm and from 29.6 μΩ cm to 113.3 μΩ cm for Au ⧹ Sn and Sn ⧹ Au layers, respectively.

Phased-Array Antenna With Optoelectronic Control Circuits

NASA Technical Reports Server (NTRS)

Kunath, Richard R.; Shalkhauser, Kurt A.; Martzaklis, Konstantinos; Lee, Richard Q.; Downey, Alan N.; Simons, Rainee N.

1995-01-01

Prototype phased-array antenna features control of amplitude and phase at each radiating element. Amplitude- and phase-control signals transmitted on optical fiber to optoelectronic interface circuit (OEIC), then to monolithic microwave integrated circuit (MMIC) at each element. Offers advantages of flexible, rapid electronic steering and shaping of beams. Furthermore, greater number of elements, less overall performance of antenna degraded by malfunction in single element.

Nanowire electron scattering spectroscopy

NASA Technical Reports Server (NTRS)

Hunt, Brian D. (Inventor); Bronikowski, Michael (Inventor); Wong, Eric W. (Inventor); von Allmen, Paul (Inventor); Oyafuso, Fabiano A. (Inventor)

2009-01-01

Methods and devices for spectroscopic identification of molecules using nanoscale wires are disclosed. According to one of the methods, nanoscale wires are provided, electrons are injected into the nanoscale wire; and inelastic electron scattering is measured via excitation of low-lying vibrational energy levels of molecules bound to the nanoscale wire.

Gate-Controlled BP-WSe2 Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics.

PubMed

Li, Dong; Wang, Biao; Chen, Mingyuan; Zhou, Jun; Zhang, Zengxing

2017-06-01

p-n junctions play an important role in modern semiconductor electronics and optoelectronics, and field-effect transistors are often used for logic circuits. Here, gate-controlled logic rectifiers and logic optoelectronic devices based on stacked black phosphorus (BP) and tungsten diselenide (WSe 2 ) heterojunctions are reported. The gate-tunable ambipolar charge carriers in BP and WSe 2 enable a flexible, dynamic, and wide modulation on the heterojunctions as isotype (p-p and n-n) and anisotype (p-n) diodes, which exhibit disparate rectifying and photovoltaic properties. Based on such characteristics, it is demonstrated that BP-WSe 2 heterojunction diodes can be developed for high-performance logic rectifiers and logic optoelectronic devices. Logic optoelectronic devices can convert a light signal to an electric one by applied gate voltages. This work should be helpful to expand the applications of 2D crystals. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Telemedicine optoelectronic biomedical data processing system

NASA Astrophysics Data System (ADS)

Prosolovska, Vita V.

2010-08-01

The telemedicine optoelectronic biomedical data processing system is created to share medical information for the control of health rights and timely and rapid response to crisis. The system includes the main blocks: bioprocessor, analog-digital converter biomedical images, optoelectronic module for image processing, optoelectronic module for parallel recording and storage of biomedical imaging and matrix screen display of biomedical images. Rated temporal characteristics of the blocks defined by a particular triggering optoelectronic couple in analog-digital converters and time imaging for matrix screen. The element base for hardware implementation of the developed matrix screen is integrated optoelectronic couples produced by selective epitaxy.

Nanoscale deformation analysis with high-resolution transmission electron microscopy and digital image correlation

DOE PAGES

Wang, Xueju; Pan, Zhipeng; Fan, Feifei; ...

2015-09-10

We present an application of the digital image correlation (DIC) method to high-resolution transmission electron microscopy (HRTEM) images for nanoscale deformation analysis. The combination of DIC and HRTEM offers both the ultrahigh spatial resolution and high displacement detection sensitivity that are not possible with other microscope-based DIC techniques. We demonstrate the accuracy and utility of the HRTEM-DIC technique through displacement and strain analysis on amorphous silicon. Two types of error sources resulting from the transmission electron microscopy (TEM) image noise and electromagnetic-lens distortions are quantitatively investigated via rigid-body translation experiments. The local and global DIC approaches are applied for themore » analysis of diffusion- and reaction-induced deformation fields in electrochemically lithiated amorphous silicon. As a result, the DIC technique coupled with HRTEM provides a new avenue for the deformation analysis of materials at the nanometer length scales.« less

A multiplexed electronic architecture for opto-electronic patch sensor to effectively monitor heart rate and oxygen saturation

NASA Astrophysics Data System (ADS)

Yan, Liangwen; Hu, Sijung; Alharbi, Samah; Blanos, Panagiotis

2018-02-01

To effectively capture human vital signs, a multi-wavelength optoelectronic patch sensor (MOEPS), together with a schematic architecture of electronics, was developed to overcome the drawbacks of present photoplethysmographic (PPG) sensors. To obtain a better performance of in vivo physiological measurement, the optimal illuminations, i.e., light emitting diodes (LEDs) in the MOEPS, whose wavelength is automatically adjusted to each specific subject, were selected to capture better PPG signals. A multiplexed electronic architecture has been well established to properly drive the MOEPS and effectively capture pulsatile waveforms at rest. The protocol was designed to investigate its performance with the participation of 11 healthy subjects aged between 18 and 30. The signals obtained from green (525nm) and orange (595nm) illuminations were used to extract heart rate (HR) and oxygen saturation (SpO2%). These results were compared with data, simultaneously acquired, from a commercial ECG and a pulse oximeter. Considering the difficulty for current devices to attain the SpO2%, a new computing method, to obtain the value of SpO2%, is proposed depended on the green and orange wavelength illuminations. The values of SpO2% between the MOEPS and the commercial Pulse Oximeter devics showed that the results were in good agreement. The values of HR showed close correlation between commercial devices and the MOEPS (HR: r1=0.994(Green); r2=0.992(Orange); r3=0.975(Red); r4=0.990(IR)).

Evolution of opto-electronic properties during film formation of complex semiconductors

NASA Astrophysics Data System (ADS)

Heinemann, M. D.; Mainz, R.; Österle, F.; Rodriguez-Alvarez, H.; Greiner, D.; Kaufmann, C. A.; Unold, T.

2017-04-01

Optical and electrical properties of complex semiconducting alloys like Cu(In,Ga)Se2 (CIGS) are strongly influenced by the reaction pathways occurring during their deposition process. This makes it desirable to observe and control these properties in real-time during the deposition. Here we show for the first time the evolution of the band gap and the sub-band-gap defect absorption of CIGS thin film as well as surface roughness during a three-stage co-evaporation process by means of an optical analysis technique, based on white light reflectometry (WLR). By simultaneously recording structural information with in-situ energy dispersive X-ray diffraction and X-ray fluorescence we can directly correlate the evolution of opto-electronic material parameters with the structural properties of the film during growth. We find that the surface roughness and the sub-gap light absorption can be correlated with the phase evolution during the transformation from (In,Ga)2Se3 to Cu(In,Ga)Se2 by the incorporation of Cu into the film. Sub-bandgap light absorption is found to be influenced by the Cu-saturated growth phase and is lowered close to the points of stoichiometry, allowing for an advanced process design.

Reactive tunnel junctions in electrically driven plasmonic nanorod metamaterials

NASA Astrophysics Data System (ADS)

Wang, Pan; Krasavin, Alexey V.; Nasir, Mazhar E.; Dickson, Wayne; Zayats, Anatoly V.

2018-02-01

Non-equilibrium hot carriers formed near the interfaces of semiconductors or metals play a crucial role in chemical catalysis and optoelectronic processes. In addition to optical illumination, an efficient way to generate hot carriers is by excitation with tunnelling electrons. Here, we show that the generation of hot electrons makes the nanoscale tunnel junctions highly reactive and facilitates strongly confined chemical reactions that can, in turn, modulate the tunnelling processes. We designed a device containing an array of electrically driven plasmonic nanorods with up to 1011 tunnel junctions per square centimetre, which demonstrates hot-electron activation of oxidation and reduction reactions in the junctions, induced by the presence of O2 and H2 molecules, respectively. The kinetics of the reactions can be monitored in situ following the radiative decay of tunnelling-induced surface plasmons. This electrically driven plasmonic nanorod metamaterial platform can be useful for the development of nanoscale chemical and optoelectronic devices based on electron tunnelling.

Femtosecond few- to single-electron point-projection microscopy for nanoscale dynamic imaging

PubMed Central

Bainbridge, A. R.; Barlow Myers, C. W.; Bryan, W. A.

2016-01-01

Femtosecond electron microscopy produces real-space images of matter in a series of ultrafast snapshots. Pulses of electrons self-disperse under space-charge broadening, so without compression, the ideal operation mode is a single electron per pulse. Here, we demonstrate femtosecond single-electron point projection microscopy (fs-ePPM) in a laser-pump fs-e-probe configuration. The electrons have an energy of only 150 eV and take tens of picoseconds to propagate to the object under study. Nonetheless, we achieve a temporal resolution with a standard deviation of 114 fs (equivalent to a full-width at half-maximum of 269 ± 40 fs) combined with a spatial resolution of 100 nm, applied to a localized region of charge at the apex of a nanoscale metal tip induced by 30 fs 800 nm laser pulses at 50 kHz. These observations demonstrate real-space imaging of reversible processes, such as tracking charge distributions, is feasible whilst maintaining femtosecond resolution. Our findings could find application as a characterization method, which, depending on geometry, could resolve tens of femtoseconds and tens of nanometres. Dynamically imaging electric and magnetic fields and charge distributions on sub-micron length scales opens new avenues of ultrafast dynamics. Furthermore, through the use of active compression, such pulses are an ideal seed for few-femtosecond to attosecond imaging applications which will access sub-optical cycle processes in nanoplasmonics. PMID:27158637

Optoelectronic Devices, Sensors, Communication and Multimedia, Photonics Applications and Web Engineering, Wilga, May 2012

NASA Astrophysics Data System (ADS)

Romaniuk, Ryszard S.

2012-05-01

This paper is the fourth part (out of five) of the research survey of WILGA Symposium work, May 2012 Edition, concerned with Optoelectronic Devices, Sensors, Communication and Multimedia (Video and Audio) technologies. It presents a digest of chosen technical work results shown by young researchers from different technical universities from this country during the Jubilee XXXth SPIE-IEEE Wilga 2012, May Edition, symposium on Photonics and Web Engineering. Topical tracks of the symposium embraced, among others, nanomaterials and nanotechnologies for photonics, sensory and nonlinear optical fibers, object oriented design of hardware, photonic metrology, optoelectronics and photonics applications, photonics-electronics co-design, optoelectronic and electronic systems for astronomy and high energy physics experiments, JET tokamak and pi-of-the sky experiments development. The symposium is an annual summary in the development of numerable Ph.D. theses carried out in this country in the area of advanced electronic and photonic systems. It is also a great occasion for SPIE, IEEE, OSA and PSP students to meet together in a large group spanning the whole country with guests from this part of Europe. A digest of Wilga references is presented [1-270].

Advanced Opto-Electronics (LIDAR and Microsensor Development)

NASA Technical Reports Server (NTRS)

Vanderbilt, Vern C. (Technical Monitor); Spangler, Lee H.

2005-01-01

Our overall intent in this aspect of the project were to establish a collaborative effort between several departments at Montana State University for developing advanced optoelectronic technology for advancing the state-of-the-art in optical remote sensing of the environment. Our particular focus was on development of small systems that can eventually be used in a wide variety of applications that might include ground-, air-, and space deployments, possibly in sensor networks. Specific objectives were to: 1) Build a field-deployable direct-detection lidar system for use in measurements of clouds, aerosols, fish, and vegetation; 2) Develop a breadboard prototype water vapor differential absorption lidar (DIAL) system based on highly stable, tunable diode laser technology developed previously at MSU. We accomplished both primary objectives of this project, in developing a field-deployable direct-detection lidar and a breadboard prototype of a water vapor DIAL system. Paper summarizes each of these accomplishments.

``Effect of Polyalkylthiophene Microstructure on Physical and Optoelectronic Properties''

NASA Astrophysics Data System (ADS)

Minkler, Michael J., Jr.; Beckingham, Bryan S.

Conjugated polymers have been of widespread interest as flexible semiconductors for organic electronic devices such as solar cells, field effect transistor,s and light-emitting diodes. Of particular interest have been alkyl-substituted polythiophenes due to their well-controlled synthesis, favorable optoelectronic properties, and solubility in organic solvents. Importantly, relatively small changes to the chemical microstructure in poly(3-alkylthiophenes) (P3ATs) can have a significant effect on the resulting physical and optoelectronic properties. For instance, the addition of aliphatic side chains onto unsubstituted polythiophene provides solubility but also greatly decreases conductivity in comparison to unsubstituted polythiophene (PT). In this work, we use Grignard metathesis polymerization to synthesize poly(3-hexylthiophene) (P3HT), PT, and statistical copolymers (P[3HT-co-T]) over a range of compositions. We examine the physical properties (melting temperature, crystallinity, etc) by differential scanning calorimetry and wide angle X-ray scattering, optoelectronic properties by UV/Vis spectroscopy, and solubility in organic solvents of these copolymers in order to gain insights into the interplay of microstructure and properties in this class of materials.

Optoelectronic properties of valence-state-controlled amorphous niobium oxide

NASA Astrophysics Data System (ADS)

Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

2016-06-01

In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.

Carbon nanotube-based three-dimensional monolithic optoelectronic integrated system

NASA Astrophysics Data System (ADS)

Liu, Yang; Wang, Sheng; Liu, Huaping; Peng, Lian-Mao

2017-06-01

Single material-based monolithic optoelectronic integration with complementary metal oxide semiconductor-compatible signal processing circuits is one of the most pursued approaches in the post-Moore era to realize rapid data communication and functional diversification in a limited three-dimensional space. Here, we report an electrically driven carbon nanotube-based on-chip three-dimensional optoelectronic integrated circuit. We demonstrate that photovoltaic receivers, electrically driven transmitters and on-chip electronic circuits can all be fabricated using carbon nanotubes via a complementary metal oxide semiconductor-compatible low-temperature process, providing a seamless integration platform for realizing monolithic three-dimensional optoelectronic integrated circuits with diversified functionality such as the heterogeneous AND gates. These circuits can be vertically scaled down to sub-30 nm and operates in photovoltaic mode at room temperature. Parallel optical communication between functional layers, for example, bottom-layer digital circuits and top-layer memory, has been demonstrated by mapping data using a 2 × 2 transmitter/receiver array, which could be extended as the next generation energy-efficient signal processing paradigm.

Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer

DOEpatents

Thompson, Mark E [Anaheim Hills, CA; Li, Jian [Los Angeles, CA; Forrest, Stephen [Princeton, NJ; Rand, Barry [Princeton, NJ

2011-02-22

An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes.

Review of optoelectronic oscillators based on modelocked lasers and resonant tunneling diode optoelectronics

NASA Astrophysics Data System (ADS)

Ironside, C. N.; Haji, Mohsin; Hou, Lianping; Akbar, Jehan; Kelly, Anthony E.; Seunarine, K.; Romeira, Bruno; Figueiredo, José M. L.

2011-05-01

Optoelectronic oscillators can provide low noise oscillators at radio frequencies in the 0.5-40 GHz range and in this paper we review two recently introduced approaches to optoelectronic oscillators. Both approaches use an optical fibre feedback loop. One approach is based on passively modelocked laser diodes and in a 40 GHz oscillator achieves up to 30 dB noise reduction. The other approach is based on resonant tunneling diode optoelectronic devices and in a 1.4 GHz oscillator can achieve up to 30 dB noise reduction.

Chaotic dynamics and synchronization in microchip solid-state lasers with optoelectronic feedback.

PubMed

Uchida, Atsushi; Mizumura, Keisuke; Yoshimori, Shigeru

2006-12-01

We experimentally observe the dynamics of a two-mode Nd:YVO4 microchip solid-state laser with optoelectronic feedback. The total laser output is detected and fed back to the injection current of the laser diode for pumping. Chaotic oscillations are observed in the microchip laser with optoelectronic self-feedback. We also observe the dynamics of two microchip lasers coupled mutually with optoelectronic link. The output of one laser is detected by a photodiode and the electronic signal converted from the laser output is sent to the pumping of the other laser. Chaotic fluctuation of the laser output is observed when the relaxation oscillation frequency is close to each other between the two microchip lasers. Synchronization of periodic wave form is also obtained when the microchip lasers have a single-longitudinal mode.

Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

PubMed Central

Tasi, Chi-Tsung; Wang, Wei-Kai; Tsai, Tsung-Yen; Huang, Shih-Yung; Horng, Ray-Hua; Wuu, Dong-Sing

2017-01-01

In this study, a 3-μm-thick AlGaN film with an Al mole fraction of 10% was grown on a nanoscale-patterned sapphire substrate (NPSS) using hydride vapor phase epitaxy (HVPE). The growth mechanism, crystallization, and surface morphology of the epilayers were examined using X-ray diffraction, transmission electron microscopy (TEM), and scanning electron microscopy at various times in the growth process. The screw threading dislocation (TD) density of AlGaN-on-NPSS can improve to 1–2 × 109 cm−2, which is significantly lower than that of the sample grown on a conventional planar sapphire substrate (7 × 109 cm−2). TEM analysis indicated that these TDs do not subsequently propagate to the surface of the overgrown AlGaN layer, but bend or change directions in the region above the voids within the side faces of the patterned substrates, possibly because of the internal stress-relaxed morphologies of the AlGaN film. Hence, the laterally overgrown AlGaN films were obtained by HVPE, which can serve as a template for the growth of ultraviolet III-nitride optoelectronic devices. PMID:28772961

Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy.

PubMed

Tasi, Chi-Tsung; Wang, Wei-Kai; Tsai, Tsung-Yen; Huang, Shih-Yung; Horng, Ray-Hua; Wuu, Dong-Sing

2017-05-31

In this study, a 3-μm-thick AlGaN film with an Al mole fraction of 10% was grown on a nanoscale-patterned sapphire substrate (NPSS) using hydride vapor phase epitaxy (HVPE). The growth mechanism, crystallization, and surface morphology of the epilayers were examined using X-ray diffraction, transmission electron microscopy (TEM), and scanning electron microscopy at various times in the growth process. The screw threading dislocation (TD) density of AlGaN-on-NPSS can improve to 1-2 × 10⁸ cm -2 , which is significantly lower than that of the sample grown on a conventional planar sapphire substrate (7 × 10⁸ cm -2 ). TEM analysis indicated that these TDs do not subsequently propagate to the surface of the overgrown AlGaN layer, but bend or change directions in the region above the voids within the side faces of the patterned substrates, possibly because of the internal stress-relaxed morphologies of the AlGaN film. Hence, the laterally overgrown AlGaN films were obtained by HVPE, which can serve as a template for the growth of ultraviolet III-nitride optoelectronic devices.

Flexible opto-electronics enabled microfluidics systems with cloud connectivity for point-of-care micronutrient analysis.

PubMed

Lee, Stephen; Aranyosi, A J; Wong, Michelle D; Hong, Ji Hyung; Lowe, Jared; Chan, Carol; Garlock, David; Shaw, Scott; Beattie, Patrick D; Kratochvil, Zachary; Kubasti, Nick; Seagers, Kirsten; Ghaffari, Roozbeh; Swanson, Christina D

2016-04-15

In developing countries, the deployment of medical diagnostic technologies remains a challenge because of infrastructural limitations (e.g. refrigeration, electricity), and paucity of health professionals, distribution centers and transportation systems. Here we demonstrate the technical development and clinical testing of a novel electronics enabled microfluidic paper-based analytical device (EE-μPAD) for quantitative measurement of micronutrient concentrations in decentralized, resource-limited settings. The system performs immune-detection using paper-based microfluidics, instrumented with flexible electronics and optoelectronic sensors in a mechanically robust, ultrathin format comparable in size to a credit card. Autonomous self-calibration, plasma separation, flow monitoring, timing and data storage enable multiple devices to be run simultaneously. Measurements are wirelessly transferred to a mobile phone application that geo-tags the data and transmits it to a remote server for real time tracking of micronutrient deficiencies. Clinical tests of micronutrient levels from whole blood samples (n=95) show comparable sensitivity and specificity to ELISA-based tests. These results demonstrate instantaneous acquisition and global aggregation of diagnostics data using a fully integrated point of care system that will enable rapid and distributed surveillance of disease prevalence and geographical progression. Copyright © 2015 Elsevier B.V. All rights reserved.

Water/alcohol soluble conjugated polymers as highly efficient electron transporting/injection layer in optoelectronic devices.

PubMed

Huang, Fei; Wu, Hongbin; Cao, Yong

2010-07-01

Water/alcohol soluble conjugated polymers (WSCPs) can be processed from water or other polar solvents, which offer good opportunities to avoid interfacial mixing upon fabrication of multilayer polymer optoelectronic devices by solution processing, and can dramatically improve charge injection from high work-function metal cathode resulting in greatly enhancement of the device performance. In this critical review, the authors provide a brief review of recent developments in this field, including the materials design, functional principles, and their unique applications as interface modification layer in solution-processable multilayer optoelectronic devices (135 references).

Applications of Nanostructured Graphene in Optoelectronics as Transparent Conductors and Photodetectors

NASA Astrophysics Data System (ADS)

Xu, Guowei

Graphene, a single layer of carbon atoms arranged in a hexagonal lattice, has unique properties of high carrier mobility, high optical transmittance, chemical inertness and flexibility, making it attractive for electronic and optoelectronic applications, such as graphene transistors, ultrahigh capacitors, transparent conductors (TCs), photodetectors. This work explores novel schemes of nanostructured graphene for optoelectronic applications including advanced TCs and photodetectors. In nanophotonic graphene nanohole arrays patterned using nanoimprinting lithography (NIL), highly efficient chemical doping was achieved on the hole edges. This provides a unique scheme for improving both optical transmittance and electrical conductivity of graphene-based TCs. In plasmonic graphene, Ag nanoparticles were decorated on graphene using thermally assisted self-assembly and NIL. Much enhanced conductivity by a factor of 2-4 was achieved through electron doping in graphene from Ag nanoparticles. More importantly, surface plasmonic effect has been incorporated into plasmonic graphene as advanced TCs with light trapping, which is critical to ultrathin-film optoelectronics such as photovoltaics and photodetectors. Based on plasmonic graphene electric double-layer (EDL) transistor, a novel scheme of photodetection has been demonstrated using plasmonic enhanced local field gating. The resulting tuning of interfacial capacitance as well as the quantum capacitance of graphene manifested as extraordinary photoconductivity and hence photoresponse.

Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications

NASA Astrophysics Data System (ADS)

Chidambara Kumar, K. N.; Khadeer Pasha, S. K.; Deshmukh, Kalim; Chidambaram, K.; Shakil Muhammad, G.

Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV-vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500-720nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

DOE PAGES

Wang, Hsin -Ping; Sutter-Fella, Carolin M.; Lobaccaro, Peter; ...

2016-06-08

The thin-film vapor–liquid–solid (TF-VLS) growth technique presents a promising route for high quality, scalable, and cost-effective InP thin films for optoelectronic devices. Toward this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy was used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces themore » relative intragap defect density by 1 order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (V OC) of individual TF-VLS InP solar cells by up to 130 mV and reduced the variance in V OC for the analyzed devices.« less

Surface engineered two-dimensional and quasi-one-dimensional nanomaterials for electronic and optoelectronic devices

NASA Astrophysics Data System (ADS)

Du, Xiang

As the sizes of individual components in electronic and optoelectronic devices approach nano scale, the performance of the devices is often determined by surface properties due to their large surface-to-volume ratio. Surface phenomena have become one of the cornerstones in nanoelectronic industry. For this reason, research on the surface functionalization has been tremendous amount of growth over the past decades, and promises to be an increasingly important field in the future. Surface functionalization, as an effective technique to modify the surface properties of a material through a physical or chemical approach, exhibits great potential to solve the problems and challenges, and modulate the performance of nanomaterials based functional devices. Surface functionalization drives the developments and applications of modern electronic and optoelectronic devices fabricated by nanomaterials. In this thesis, I demonstrate two surface functionalization approaches, namely, surface transfer doping and H2 annealing, to effectively solve the problems and significantly enhance the performance of 2D (single structure black phosphorus (BP) and heterostructure graphene/Si Schottky junction), and quasi-1D (molybdenum trioxide (MoO 3) nanobelt) nanomaterials based functional devices, respectively. In situ photoelectron spectroscopy (PES) measurements were also carried out to explore the interfacial charge transfer occurring at the interface between the nanostructures and doping layers, and the gap states in MoO 3 thin films, which provides the underlying mechanism to understand and support our device measurement results. In the first part of this thesis, I will discuss the first surface functionalization approach, namely, surface transfer doping, to effectively modulate the ambipolar characteristics of 2D few-layer BP flakes based FETs. The ambipolar characteristics of BP transistors were effectively modulated through in situ surface functionalization with cesium carbonate (Cs2

Wrapped optoelectronic devices and methods for making same

DOE Office of Scientific and Technical Information (OSTI.GOV)

Curran, Seamus; Dias, Sampath; Alley, Nigel

In various embodiments, optoelectronic devices are described herein. The optoelectronic device may include an optoelectronic cell arranged so as to wrap around a central axis wherein the cell includes a first conductive layer, a semi-conductive layer disposed over and in electrical communication with the first conductive layer, and a second conductive layer disposed over and in electrical communication with the semi-conductive layer. In various embodiments, methods for making optoelectronic devices are described herein. The methods may include forming an optoelectronic cell while flat and wrapping the optoelectronic cell around a central axis. The optoelectronic devices may be photovoltaic devices. Alternatively,more » the optoelectronic devices may be organic light emitting diodes.« less

Opto-electronic device for frequency standard generation and terahertz-range optical demodulation based on quantum interference

DOEpatents

Georgiades, Nikos P.; Polzik, Eugene S.; Kimble, H. Jeff

1999-02-02

An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100's THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 .mu.m to 1.66 .mu.m for fiber optics can be accomplished with a nearly continuous frequency coverage.

Predicting the structural and electronic properties of two-dimensional single layer boron nitride sheets

NASA Astrophysics Data System (ADS)

Li, Xiao-Dong; Cheng, Xin-Lu

2018-02-01

Three two-dimensional (2D) single layer boron nitride sheets have been predicted based on the first-principles calculations. These 2D boron nitride sheets are comprised of equivalent boron atoms and nitride atoms with sp2 and sp bond hybridization. The geometry optimization reflects that they all possess stable planar crystal structures with the space group P 6 bar 2 m (D3h3) symmetry. The charge density distribution manifests that the B-N bonds in these boron nitride sheets are covalent in nature but with ionic characteristics. The tunable band gaps indicate their potential applications in nanoscale electronic and optoelectronic devices by changing the length of sp-bonded Bsbnd N linkages.

Time-Resolved Measurements in Optoelectronic Microbioanalysis

NASA Technical Reports Server (NTRS)

Bearman, Gregory; Kossakovski, Dmitri

2003-01-01

A report presents discussion of time-resolved measurements in optoelectronic microbioanalysis. Proposed microbioanalytical laboratory-on-a-chip devices for detection of microbes and toxic chemicals would include optoelectronic sensors and associated electronic circuits that would look for fluorescence or phosphorescence signatures of multiple hazardous biomolecules in order to detect which ones were present in a given situation. The emphasis in the instant report is on gating an active-pixel sensor in the time domain, instead of filtering light in the wavelength domain, to prevent the sensor from responding to a laser pulse used to excite fluorescence or phosphorescence while enabling the sensor to respond to the decaying fluorescence or phosphorescence signal that follows the laser pulse. The active-pixel sensor would be turned on after the laser pulse and would be used to either integrate the fluorescence or phosphorescence signal over several lifetimes and many excitation pulses or else take time-resolved measurements of the fluorescence or phosphorescence. The report also discusses issues of multiplexing and of using time-resolved measurements of fluorophores with known different fluorescence lifetimes to distinguish among them.

All-organic optoelectronic sensor for pulse oximetry

NASA Astrophysics Data System (ADS)

Lochner, Claire M.; Khan, Yasser; Pierre, Adrien; Arias, Ana C.

2014-12-01

Pulse oximetry is a ubiquitous non-invasive medical sensing method for measuring pulse rate and arterial blood oxygenation. Conventional pulse oximeters use expensive optoelectronic components that restrict sensing locations to finger tips or ear lobes due to their rigid form and area-scaling complexity. In this work, we report a pulse oximeter sensor based on organic materials, which are compatible with flexible substrates. Green (532 nm) and red (626 nm) organic light-emitting diodes (OLEDs) are used with an organic photodiode (OPD) sensitive at the aforementioned wavelengths. The sensor’s active layers are deposited from solution-processed materials via spin-coating and printing techniques. The all-organic optoelectronic oximeter sensor is interfaced with conventional electronics at 1 kHz and the acquired pulse rate and oxygenation are calibrated and compared with a commercially available oximeter. The organic sensor accurately measures pulse rate and oxygenation with errors of 1% and 2%, respectively.

Semiconductor laser-based optoelectronics oscillators

NASA Astrophysics Data System (ADS)

Yao, X. S.; Maleki, Lute; Wu, Chi; Davis, Lawrence J.; Forouhar, Siamak

1998-08-01

We demonstrate the realization of coupled opto-electronic oscillators (COEO) with different semiconductor lasers, including a ring laser, a Fabry-Perot laser, and a colliding pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 picoseconds and RF signals as high in frequency as 18 GHz with a spectral purity comparable with a HP8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.

Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

NASA Astrophysics Data System (ADS)

Cho, Seungho; Yun, Chao; Tappertzhofen, Stefan; Kursumovic, Ahmed; Lee, Shinbuhm; Lu, Ping; Jia, Quanxi; Fan, Meng; Jian, Jie; Wang, Haiyan; Hofmann, Stephan; MacManus-Driscoll, Judith L.

2016-08-01

Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO2 and SrTiO3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (~1012 inch-2). We systematically show that these devices allow precise engineering of the resistance states, thus enabling large on-off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.

PREFACE: 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON'19)

NASA Astrophysics Data System (ADS)

González, T.; Martín-Martínez, M. J.; Mateos, J.

2015-10-01

The 19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON'19) was held at the Hospedería Fonseca (Universidad de Salamanca, Spain), on 29 June - 2 July, 2015, and was organized by the Electronics Area from the University of Salamanca. The Conference is held biannually and covers the recent progress in the field of electron dynamics in solid-state materials and devices. This was the 19th meeting of the international conference series formerly named Hot Carriers in Semiconductors (HCIS), first held in Modena in 1973. In the edition of 1997 in Berlin the name of the conference changed to International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, keeping the same acronym, HCIS; and finally in the edition of Montpellier in 2009 the name was again changed to the current one, International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON). The latest editions took place in Santa Barbara, USA, in 2011 and Matsue, Japan, in 2013. Research work on electron dynamics involves quite different disciplines, and requires both fundamental and technological scientific efforts. Attendees to the conference come mostly from academic institutions, belonging to both theoretical and experimental groups working in a variety of fields, such as solid-state physics, electronics, optics, electrical engineering, material science, laser physics, etc. In this framework, events like the EDISON conference become a basic channel for the progress in the field. Here, researchers working in different areas can meet, present their latest advances and exchange their ideas. The program of EDISON'19 included 13 invited papers, 61 oral contributions and 73 posters. These contributions originated from scientists in more than 30 different countries. The Conference gathered 140 participants, coming from 24 different countries, most from Europe, but also with a significant participation

First principle study of electronic nanoscale structure of In x Ga1- x P with variable size, shape and alloying percentage

NASA Astrophysics Data System (ADS)

Hussein, M. T.; Kasim, T.; Abdulsattar, M. A.

2013-11-01

In present work, we investigate electronic properties of alloying percentage of In x Ga1- x P compound with different sizes of superlattice large unit cell (LUC) method with 8, 16, 54, and 64 nanocrystals core atoms. The size and type of alloying compound are varied so that it can be tuned to a required application. To determine properties of indium gallium phosphide nanocrystals density functional theory at the generalized-gradient approximation level coupled with LUC method is used to simulate electronic structure of zinc blende indium gallium phosphide nanocrystals that have dimensions around 2-2.8 nm. The calculated properties include lattice constant, energy gap, valence band width, cohesive energy, density of states (DOS) etc. Results show that laws that are applied at microscale alloying percentage are no more applicable at the present nanoscale. Results also show that size, shape and quantum effects are strong. Many properties fluctuate at nanoscale while others converge to definite values. DOS summarizes many of the above quantities.

Optoelectronic Mounting Structure

DOEpatents

Anderson, Gene R.; Armendariz, Marcelino G.; Baca, Johnny R. F.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reber, Cathleen A.; Reysen, Bill H.

2004-10-05

An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

Optical Properties of Gallium Arsenide and Indium Gallium Arsenide Quantum Wells and Their Applications to Opto-Electronic Devices.

NASA Astrophysics Data System (ADS)

Huang, Daming

1990-01-01

In this thesis we investigate the optical properties of modulation doped GaAs/AlGaAs and strained-layer undoped InGaAs/GaAs multiple quantum well structures (MQWS). The phenomena studied are the effects of carrier, strain, and the electric field on the absorption of excitons. For GaAs/AlGaAs modulation doped MQWS, the quenching of excitons by free carriers has been demonstrated. The comparison of the experimental results with calculations which consider phase space filling, screening, and exchange interaction showed the phase space filling to be the dominant mechanism responsible for the change of oscillator strength and binding energy of excitons associated with partially filled subband. On the other hand, the screening and exchange interaction are equally important to excitons associated with empty subbands. For InGaAs/GaAs strained-layer MQWS, we have demonstrated that the band edges are dramatically modified by strain. We determined the band discontinuities at InGaAs/GaAs interfaces using optical absorption, and showed that in this structure the heavy holes are confined in InGaAs layers while the light holes are in GaAs layers, in contrast to GaAs/AlGaAs MQWS. We also explore applications of GaAs/AlGaAs and InGaAs/GaAs MQWS to opto-electronic devices. The principle of devices investigated is mainly based on the electric field effect on the excitonic absorption in MQWS (the quantum confined Stark effect). Two examples presented in this thesis are the strained-layer InGaAs/GaAs MQWS electroabsorption modulators grown on GaAs substrates and the GaAs/AlGaAs MQWS reflection modulators grown on Si substrates. The large modulation observed in the absorption coefficient by an electric field is expected to facilitate opto-electronic integration.

Experimental Optoelectronic Associative Memory

NASA Technical Reports Server (NTRS)

Chao, Tien-Hsin

1992-01-01

Optoelectronic associative memory responds to input image by displaying one of M remembered images. Which image to display determined by optoelectronic analog computation of resemblance between input image and each remembered image. Does not rely on precomputation and storage of outer-product synapse matrix. Size of memory needed to store and process images reduced.

Macromolecular scaffolding: the relationship between nanoscale architecture and function in multichromophoric arrays for organic electronics.

PubMed

Palermo, Vincenzo; Schwartz, Erik; Finlayson, Chris E; Liscio, Andrea; Otten, Matthijs B J; Trapani, Sara; Müllen, Klaus; Beljonne, David; Friend, Richard H; Nolte, Roeland J M; Rowan, Alan E; Samorì, Paolo

2010-02-23

The optimization of the electronic properties of molecular materials based on optically or electrically active organic building blocks requires a fine-tuning of their self-assembly properties at surfaces. Such a fine-tuning can be obtained on a scale up to 10 nm by mastering principles of supramolecular chemistry, i.e., by using suitably designed molecules interacting via pre-programmed noncovalent forces. The control and fine-tuning on a greater length scale is more difficult and challenging. This Research News highlights recent results we obtained on a new class of macromolecules that possess a very rigid backbone and side chains that point away from this backbone. Each side chain contains an organic semiconducting moiety, whose position and electronic interaction with neighboring moieties are dictated by the central macromolecular scaffold. A combined experimental and theoretical approach has made it possible to unravel the physical and chemical properties of this system across multiple length scales. The (opto)electronic properties of the new functional architectures have been explored by constructing prototypes of field-effect transistors and solar cells, thereby providing direct insight into the relationship between architecture and function.

Bench-scale synthesis of nanoscale materials

NASA Technical Reports Server (NTRS)

Buehler, M. F.; Darab, J. G.; Matson, D. W.; Linehan, J. C.

1994-01-01

A novel flow-through hydrothermal method used to synthesize nanoscale powders is introduced by Pacific Northwest Laboratory. The process, Rapid Thermal Decomposition of precursors in Solution (RTDS), uniquely combines high-pressure and high-temperature conditions to rapidly form nanoscale particles. The RTDS process was initially demonstrated on a laboratory scale and was subsequently scaled up to accommodate production rates attractive to industry. The process is able to produce a wide variety of metal oxides and oxyhydroxides. The powders are characterized by scanning and transmission electron microscopic methods, surface-area measurements, and x-ray diffraction. Typical crystallite sizes are less than 20 nanometers, with BET surface areas ranging from 100 to 400 sq m/g. A description of the RTDS process is presented along with powder characterization results. In addition, data on the sintering of nanoscale ZrO2 produced by RTDS are included.

Exploring single-layered SnSe honeycomb polymorphs for optoelectronic and photovoltaic applications

NASA Astrophysics Data System (ADS)

Ul Haq, Bakhtiar; AlFaify, S.; Ahmed, R.; Butt, Faheem K.; Laref, A.; Shkir, Mohd.

2018-02-01

Single-layered tin selenide that shares the same structure with phosphorene and possesses intriguing optoelectronic properties has received great interest as a two-dimensional material beyond graphene and phosphorene. Herein, we explore the optoelectronic response of the newly discovered stable honeycomb derivatives (such as α , β , γ , δ , and ɛ ) of single-layered SnSe in the framework of density functional theory. The α , β , γ , and δ derivatives of a SnSe monolayer have been found to exhibit an indirect band gap, however, the dispersion of their band-gap edges demonstrates multiple direct band gaps at a relatively high energy. The ɛ -SnSe, however, features an intrinsic direct band gap at the high-symmetry Γ point. Their energy band gaps (0.53, 2.32, 1.52, 1.56, and 1.76 eV for α -, β -, γ -, δ -, and ɛ -SnSe, respectively), calculated at the level of the Tran-Blaha modified Becke-Johnson approach, mostly fall right in the visible range of the electromagnetic spectrum and are in good agreement with the available literature. The optical spectra of these two-dimensional (2D) SnSe polymorphs (besides β -SnSe) are highly anisotropic and possess strictly different optical band gaps along independent diagonal components. They show high absorption in the visible and UV ranges. Similarly, the reflectivity, refraction, and optical conductivities inherit strong anisotropy from the dielectric functions as well and are highly visible-UV polarized along the cartesian coordinates, showing them to be suitable for optical filters, polarizers, and shields against UV radiation. Our investigations suggest these single-layered SnSe allotropes as a promising 2D material for next-generation nanoscale optoelectronic and photovoltaic applications beyond graphene and phosphorene.

Enhancement of photocurrent extraction and electron injection in dual-functional CH3NH3PbBr3 perovskite-based optoelectronic devices via interfacial engineering

NASA Astrophysics Data System (ADS)

Tsai, Chia-Lung; Lu, Yi-Chen; Hsiung Chang, Sheng

2018-07-01

Photocurrent extraction and electron injection in CH3NH3PbBr3 (MAPbBr3) perovskite-based optoelectronic devices are both significantly increased by improving the contact at the PCBM/MAPbBr3 interface with an extended solvent annealing (ESA) process. Photoluminescence quenching and x-ray diffraction experiments show that the ESA not only improves the contact at the PCBM/MAPbBr3 interface but also increases the crystallinity of the MAPbBr3 thin films. The optimized dual-functional PCBM-MAPbBr3 heterojunction based optoelectronic device has a high power conversion efficiency of 4.08% and a bright visible luminescence of 1509 cd m‑2. In addition, the modulation speed of the MAPbBr3 based light-emitting diodes is larger than 14 MHz, which indicates that the defect density in the MAPbBr3 thin film can be effectively reduced by using the ESA process.

Enhancement of photocurrent extraction and electron injection in dual-functional CH3NH3PbBr3 perovskite-based optoelectronic devices via interfacial engineering.

PubMed

Tsai, Chia-Lung; Lu, Yi-Chen; Chang, Sheng Hsiung

2018-07-06

Photocurrent extraction and electron injection in CH 3 NH 3 PbBr 3 (MAPbBr 3 ) perovskite-based optoelectronic devices are both significantly increased by improving the contact at the PCBM/MAPbBr 3 interface with an extended solvent annealing (ESA) process. Photoluminescence quenching and x-ray diffraction experiments show that the ESA not only improves the contact at the PCBM/MAPbBr 3 interface but also increases the crystallinity of the MAPbBr 3 thin films. The optimized dual-functional PCBM-MAPbBr 3 heterojunction based optoelectronic device has a high power conversion efficiency of 4.08% and a bright visible luminescence of 1509 cd m -2 . In addition, the modulation speed of the MAPbBr 3 based light-emitting diodes is larger than 14 MHz, which indicates that the defect density in the MAPbBr 3 thin film can be effectively reduced by using the ESA process.

Small Molecule Organic Optoelectronic Devices

NASA Astrophysics Data System (ADS)

Bakken, Nathan

Organic optoelectronics include a class of devices synthesized from carbon containing 'small molecule' thin films without long range order crystalline or polymer structure. Novel properties such as low modulus and flexibility as well as excellent device performance such as photon emission approaching 100% internal quantum efficiency have accelerated research in this area substantially. While optoelectronic organic light emitting devices have already realized commercial application, challenges to obtain extended lifetime for the high energy visible spectrum and the ability to reproduce natural white light with a simple architecture have limited the value of this technology for some display and lighting applications. In this research, novel materials discovered from a systematic analysis of empirical device data are shown to produce high quality white light through combination of monomer and excimer emission from a single molecule: platinum(II) bis(methyl-imidazolyl)toluene chloride (Pt-17). Illumination quality achieved Commission Internationale de L'Eclairage (CIE) chromaticity coordinates (x = 0.31, y = 0.38) and color rendering index (CRI) > 75. Further optimization of a device containing Pt-17 resulted in a maximum forward viewing power efficiency of 37.8 lm/W on a plain glass substrate. In addition, accelerated aging tests suggest high energy blue emission from a halogen-free cyclometalated platinum complex could demonstrate degradation rates comparable to known stable emitters. Finally, a buckling based metrology is applied to characterize the mechanical properties of small molecule organic thin films towards understanding the deposition kinetics responsible for an elastic modulus that is both temperature and thickness dependent. These results could contribute to the viability of organic electronic technology in potentially flexible display and lighting applications. The results also provide insight to organic film growth kinetics responsible for optical

Reduction of aqueous Crvi using nanoscale zero-valent iron dispersed by high energy electron beam irradiation

NASA Astrophysics Data System (ADS)

Zhang, Jing; Zhang, Guilong; Wang, Min; Zheng, Kang; Cai, Dongqing; Wu, Zhengyan

2013-09-01

High energy electron beam (HEEB) irradiation was used to disperse nanoscale zero-valent iron (NZVI) for reduction of Crvi to Criii in aqueous solution. Pore size distribution, scanning electron microscopy and X-ray diffraction characterizations demonstrated that HEEB irradiation could effectively increase the dispersion of NZVI resulting in more active reduction sites of Crvi on NZVI. Batch reduction experiments indicated that the reductive capacity of HEEB irradiation-modified NZVI (IMNZVI) was significantly improved, as the reductive efficiency reached 99.79% under the optimal conditions (electron beam dose of 30 kGy at 10 MeV, pH 2.0 and 313 K) compared with that of raw NZVI (72.14%). Additionally, the NZVI was stable for at least two months after irradiation. The modification mechanism of NZVI by HEEB irradiation was investigated and the results indicated that charge and thermal effects might play key roles in dispersing the NZVI particles.

Opto-electronic device for frequency standard generation and terahertz-range optical demodulation based on quantum interference

DOEpatents

Georgiades, N.P.; Polzik, E.S.; Kimble, H.J.

1999-02-02

An opto-electronic system and technique for comparing laser frequencies with large frequency separations, establishing new frequency standards, and achieving phase-sensitive detection at ultra high frequencies are disclosed. Light responsive materials with multiple energy levels suitable for multi-photon excitation are preferably used for nonlinear mixing via quantum interference of different excitation paths affecting a common energy level. Demodulation of a carrier with a demodulation frequency up to 100`s THZ can be achieved for frequency comparison and phase-sensitive detection. A large number of materials can be used to cover a wide spectral range including the ultra violet, visible and near infrared regions. In particular, absolute frequency measurement in a spectrum from 1.25 {micro}m to 1.66 {micro}m for fiber optics can be accomplished with a nearly continuous frequency coverage. 7 figs.

Effect of intrinsic electronic defect states on the morphology and optoelectronic properties of Sn-rich SnS particles

NASA Astrophysics Data System (ADS)

Singh, Chetan C.; Panda, Emila

2018-05-01

A small variation in the elemental composition of a chemical compound can cause the formation of additional electronic defect states in the material, thereby altering the overall microstructure and thus induced properties. In this work, we observed chemical constitution-induced modification in the morphology and optoelectronic properties of SnS. To this end, SnS particles were prepared using the solution chemical route and were characterized using a wide range of experimental techniques, such as x-ray diffractometry, field emission scanning electron microscopy, high resolution transmission electron microscopy, energy dispersive spectroscopy (EDS), x-ray photoelectron spectroscopy (XPS), UV-Vis spectrophotometry, and scanning tunneling spectroscopy (STS). All these SnS particles are found to be Sn-rich and p-type. However, distinctly different morphologies (i.e., flower-like and aggregated ones) are observed. These are then correlated with the electronic defect states, which are induced because of the presence of Sn vacancies, Sn antisites, and/or Sn interstitials. A combination of EDS, XPS, and STS data confirmed the presence of a higher concentration of Sn vacancies along with lower quantities of Sn interstitials and/or antisites in the SnS particles with flower-like morphologies giving rise to higher hole concentration, which subsequently leads to reduced transport, optical band gaps, and barrier heights.

Towards roll-to-roll fabrication of electronics, optics, and optoelectronics for smart and intelligent packaging

NASA Astrophysics Data System (ADS)

Kololuoma, Terho K.; Tuomikoski, Markus; Makela, Tapio; Heilmann, Jali; Haring, Tomi; Kallioinen, Jani; Hagberg, Juha; Kettunen, Ilkka; Kopola, Harri K.

2004-06-01

Embedding of optoelectrical, optical, and electrical functionalities into low-cost products like packages and printed matter can be used to increase their information content. These functionalities make also possible the realization of new type of entertaining, impressive or guiding effects on the product packages and printed matter. For these purposes, components like displays, photodetectors, light sources, solar cells, battery elements, diffractive optical elements, lightguides, electrical conductors, resistors, transistors, switching elements etc. and their integration to functional modules are required. Additionally, the price of the components for low-end products has to be in cent scale or preferably below that. Therefore, new, cost-effective, and volume scale capable manufacturing techniques are required. Recent developments of liquid-phase processable electrical and optical polymeric, inorganic, and hybrid materials - inks - have made it possible to fabricate functional electrical, optical and optoelectrical components by conventional roll-to-roll techniques such as gravure printing, embossing, digital printing, offset, and screen printing on flexible paper and plastic like substrates. In this paper, we show our current achievements in the field of roll-to-roll fabricated, optics, electronics and optoelectronics. With few examples, we also demonstrate the printing and hot-embossing capabilities of table scale printing machines and VTT Electronic's 'PICO' roll-to-roll pilot production facility.

Unconventional Nanoscale Photoresponse and Degradation Process in Hybrid Organic-inorganic Perovskites.

NASA Astrophysics Data System (ADS)

Chu, Zhaodong; Yang, Mengjin; Schulz, Philip; Wu, Di; Zhu, Kai; Li, Xiaoqin; Lai, Keji

The remarkable performance of organic-inorganic perovskite solar cells (PSCs) is challenging the dogma that solution-processed thin films are inevitably associated with inferior energy conversion efficiencies. The surprisingly low impact of polycrystallinity on the film quality highlights the unusual photo-response of intrinsic defects and grain boundaries in these materials. Here, we report the first quantitative nanoscale photoconductivity imaging on methylammonium lead triiodide (MAPbI3) thin films by microwave impedance microscopy with light stimulation. The local photoconductivity as a function of the above-gap laser power is consistent with the high carrier mobility and long lifetime of MAPbI3. The photo-response is largely uniform across grains and grain boundaries, which is direct evidence on the inherently benign nature of microstructures in the perovskite thin films. For encapsulated MAPbI3 films, the observed long-term degradation in photoconductivity begins with the disintegration of large grains due to the diffusion of water molecules through the capping layer. Our work suggests that the striking PSC performance is deeply rooted in the nanoscale optoelectronic properties of MAPbI3. We gratefully acknowledge financial support from NSF EFMA-1542747.

Optoelectronic properties of single-wall carbon nanotubes.

PubMed

Nanot, Sébastien; Hároz, Erik H; Kim, Ji-Hee; Hauge, Robert H; Kono, Junichiro

2012-09-18

Single-wall carbon nanotubes (SWCNTs), with their uniquely simple crystal structures and chirality-dependent electronic and vibrational states, provide an ideal laboratory for the exploration of novel 1D physics, as well as quantum engineered architectures for applications in optoelectronics. This article provides an overview of recent progress in optical studies of SWCNTs. In particular, recent progress in post-growth separation methods allows different species of SWCNTs to be sorted out in bulk quantities according to their diameters, chiralities, and electronic types, enabling studies of (n,m)-dependent properties using standard macroscopic characterization measurements. Here, a review is presented of recent optical studies of samples enriched in 'armchair' (n = m) species, which are truly metallic nanotubes but show excitonic interband absorption. Furthermore, it is shown that intense ultrashort optical pulses can induce ultrafast bandgap oscillations in SWCNTs, via the generation of coherent phonons, which in turn modulate the transmission of a delayed probe pulse. Combined with pulse-shaping techniques, coherent phonon spectroscopy provides a powerful method for studying exciton-phonon coupling in SWCNTs in a chirality-selective manner. Finally, some of the basic properties of highly aligned SWCNT films are highlighted, which are particularly well-suited for optoelectronic applications including terahertz polarizers with nearly perfect extinction ratios and broadband photodetectors. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Toward high performance nanoscale optoelectronic devices: super solar energy harvesting in single standing core-shell nanowire.

PubMed

Zhou, Jian; Wu, Yonggang; Xia, Zihuan; Qin, Xuefei; Zhang, Zongyi

2017-11-27

Single nanowire solar cells show great promise for next-generation photovoltaics and for powering nanoscale devices. Here, we present a detailed study of light absorption in a single standing semiconductor-dielectric core-shell nanowire (CSNW). We find that the CSNW structure can not only concentrate the incident light into the structure, but also confine most of the concentrated light to the semiconductor core region, which boosts remarkably the light absorption cross-section of the semiconductor core. The CSNW can support multiple higher-order HE modes, as well as Fabry-Pérot (F-P) resonance, compared to the bare nanowire (BNW). Overlapping of the adjacent higher-order HE modes results in broadband light absorption enhancement in the solar radiation spectrum. Results based on detailed balance analysis demonstrate that the super light concentration of the single CSNW gives rise to higher short-circuit current and open-circuit voltage, and thus higher apparent power conversion efficiency (3644.2%), which goes far beyond that of the BNW and the Shockley-Queisser limit that restricts the performance of a planar counterparts. Our study shows that the single CSNW can be a promising platform for construction of high performance nanoscale photodetectors, nanoelectronic power sources, super miniature cells, and diverse integrated nanosystems.

Tailoring uniform gold nanoparticle arrays and nanoporous films for next-generation optoelectronic devices

NASA Astrophysics Data System (ADS)

Farid, Sidra; Kuljic, Rade; Poduri, Shripriya; Dutta, Mitra; Darling, Seth B.

2018-06-01

High-density arrays of gold nanodots and nanoholes on indium tin oxide (ITO)-coated glass surfaces are fabricated using a nanoporous template fabricated by the self-assembly of diblock copolymers of poly (styrene-block-methyl methacrylate) (PS-b-PMMA) structures. By balancing the interfacial interactions between the polymer blocks and the substrate using random copolymer, cylindrical block copolymer microdomains oriented perpendicular to the plane of the substrate have been obtained. Nanoporous PS films are created by selectively etching PMMA cylinders, a straightforward route to form highly ordered nanoscale porous films. Deposition of gold on the template followed by lift off and sonication leaves a highly dense array of gold nanodots. These materials can serve as templates for the vapor-liquid-solid (VLS) growth of semiconductor nanorod arrays for next generation hybrid optoelectronic applications.

Resonant infrared laser deposition of polymer-nanocomposite materials for optoelectronic applications

NASA Astrophysics Data System (ADS)

Park, Hee K.; Schriver, Kenneth E.; Haglund, Richard F.

2011-11-01

Polymers find a number of potentially useful applications in optoelectronic devices. These include both active layers, such as light-emitting polymers and hole-transport layers, and passive layers, such as polymer barrier coatings and light-management films. This paper reports the experimental results for polymer films deposited by resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) and resonant infrared pulsed laser deposition (RIR-PLD) for commercial optoelectronic device applications. In particular, light-management films, such as anti-reflection coatings, require refractive-index engineering of a material. However, refractive indices of polymers fall within a relatively narrow range, leading to major efforts to develop both low- and high-refractive-index polymers. Polymer nanocomposites can expand the range of refractive indices by incorporating low- or high-refractive-index nanoscale materials. RIR-MAPLE is an excellent technique for depositing polymer-nanocomposite films in multilayer structures, which are essential to light-management coatings. In this paper, we report our efforts to engineer the refractive index of a barrier polymer by combining RIR-MAPLE of nanomaterials (for example, high refractive-index TiO2 nanoparticles) and RIR-PLD of host polymer. In addition, we report on the properties of organic and polymer films deposited by RIR-MAPLE and/or RIR-PLD, such as Alq3 [tris(8-hydroxyquinoline) aluminum] and PEDOT:PSS [poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)]. Finally, the challenges and potential for commercializing RIR-MAPLE/PLD, such as industrial scale-up issues, are discussed.

Anisotropic electrical transport of flexible tungsten carbide nanostructures: towards nanoscale interconnects and electron emitters

NASA Astrophysics Data System (ADS)

Sun, Bo; Sun, Yong; Wang, Chengxin

2017-11-01

Due to the coexistence of metal- and ionic-bonds in a hexagonal tungsten carbide (WC) lattice, disparate electron behaviors were found in the basal plane and along the c-axial direction, which may create an interesting anisotropic mechanical and electrical performance. To demonstrate this, low-dimensional nanostructures such as nanowires and nanosheets are suitable for investigation because they usually grow in single crystals with special orientations. Herein, we report the experimental research regarding the anisotropic conductivity of [0001] grown WC nanowires and basal plane-expanded nanosheets, which resulted in a conductivity of 7.86 × 103 Ω-1 · m-1 and 7.68 × 104 Ω-1 · m-1 respectively. This conforms to the fact that the highly localized W d state aligns along the c direction, while there is little intraplanar directional bonding in the W planes. With advanced micro-manipulation technology, the conductivity of a nanowire was tested to be approximately constant, even under a considerable bending state. Moreover, the field electron emission of WC was evaluated based on large area emission and single nanowire (nanosheet) emission. A single nanowire exhibits a stable electron emission performance, which can output emission currents >3 uA before fusing. These results provide useful references to assess low-dimensional WC nanostructures as electronic materials in flexible devices, such as nanoscale interconnects and electron emitters.

Study and practice of flipped classroom in optoelectronic technology curriculum

NASA Astrophysics Data System (ADS)

Shi, Jianhua; Lei, Bing; Liu, Wei; Yao, Tianfu; Jiang, Wenjie

2017-08-01

"Flipped Classroom" is one of the most popular teaching models, and has been applied in more and more curriculums. It is totally different from the traditional teaching model. In the "Flipped Classroom" model, the students should watch the teaching video afterschool, and in the classroom only the discussion is proceeded to improve the students' comprehension. In this presentation, "Flipped Classroom" was studied and practiced in opto-electronic technology curriculum; its effect was analyzed by comparing it with the traditional teaching model. Based on extensive and deep investigation, the phylogeny, the characters and the important processes of "Flipped Classroom" are studied. The differences between the "Flipped Classroom" and the traditional teaching model are demonstrated. Then "Flipped Classroom" was practiced in opto-electronic technology curriculum. In order to obtain high effectiveness, a lot of teaching resources were prepared, such as the high-quality teaching video, the animations and the virtual experiments, the questions that the students should finish before and discussed in the class, etc. At last, the teaching effect was evaluated through analyzing the result of the examination and the students' surveys.

Optical microresonator for application to an opto-electronic oscillator

NASA Astrophysics Data System (ADS)

Wu, Yu-Mei; Vivien, Laurent; Cassan, Eric; Luong, Vu Hai Nam; Nguyen, Lam Duy; Journet, Bernard

2010-02-01

Optoelectronic oscillators are classically based on a feedback fiber loop acting as a delay line for high spectral purity. One of the problems due to long fiber loops is the size and the requirement of temperature control. Going toward integrated solutions requires the introduction of optical resonators with a very high quality factor. A structure based on silicon on insulator material has been designed for application to an oscillator working at 8 GHz. The micro-resonator has a stadium shape with a ridge of 30 nm height, 1 μm width, a millimetric radius and a gap of some microns in agreement with the required free spectral range. A quality factor of 500000 can be achieved leading to an equivalent fiber loop of 2 km.

Coupled Optoelectronic Oscillators:. Application to Low-Jitter Pulse Generation

NASA Astrophysics Data System (ADS)

Yu, N.; Tu, M.; Maleki, L.

2002-04-01

Actively mode-locked Erbium-doped fiber lasers (EDFL) have been studied for generating stable ultra-fast pulses (< 2 ps) at high repetition rates (> 5 GHz) [1,2]. These devices can be compact and environmentally stable, quite suitable for fiber-based high-data-rate communications and optical ultra-fast analog-to-digital conversions (ADC) [3]. The pulse-to-pulse jitter of an EDFL-based pulse generator will be ultimately limited by the phase noise of the mode-locking microwave source (typically electronic frequency synthesizers). On the other hand, opto-electronic oscillators (OEO) using fibers have been demonstrated to generate ultra-low phase noise microwaves at 10 GHz and higher [4]. The overall phase noise of an OEO can be much lower than commercially available synthesizers at the offset-frequency range above 100 Hz. Clearly, ultra-low jitter pulses can be generated by taking advantage of the low phase noise of OEOs. In this paper, we report the progress in developing a new low-jitter pulse generator by combing the two technologies. In our approach, the optical oscillator (mode-locked EDFL) and the microwave oscillator (OEO) are coupled through a common Mach-Zehnder (MZ) modulator, thus named coupled opto-electronic oscillator (COEO) [5]. Based on the results of previous OEO study, we can expect a 10 GHz pulse train with jitters less than 10 fs.

Nanoscale integration is the next frontier for nanotechnology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Picraux, Samuel T

2009-01-01

Nanoscale integration of materials and structures is the next critical step to exploit the promise of nanomaterials. Many novel and fascinating properties have been revealed for nanostructured materials. But if nanotechnology is to live up to its promise we must incorporate these nanoscale building blocks into functional systems that connect to the micro- and macroscale world. To do this we will inevitably need to understand and exploit the resulting combined unique properties of these integrated nanosystems. Much science waits to be discovered in the process. Nanoscale integration extends from the synthesis and fabrication of individual nanoscale building blocks, to themore » assembly of these building blocks into composite structures, and finally to the formation of complex functional systems. As illustrated in Figure 1, the building blocks may be homogeneous or heterogeneous, the composite materials may be nanocomposite or patterned structures, and the functional systems will involve additional combinations of materials. Nanoscale integration involves assembling diverse nanoscale materials across length scales to design and achieve new properties and functionality. At each stage size-dependent properties, the influence of surfaces in close proximity, and a multitude of interfaces all come into play. Whether the final system involves coherent electrons in a quantum computing approach, the combined flow of phonons and electrons for a high efficiency thermoelectric micro-generator, or a molecular recognition structure for bio-sensing, the combined effects of size, surface, and interface will be critical. In essence, one wants to combine the novel functions available through nanoscale science to achieve unique multi-functionalities not available in bulk materials. Perhaps the best-known example of integration is that of combining electronic components together into very large scale integrated circuits (VLSI). The integrated circuit has revolutionized electronics

Cultivation of students' engineering designing ability based on optoelectronic system course project

NASA Astrophysics Data System (ADS)

Cao, Danhua; Wu, Yubin; Li, Jingping

2017-08-01

We carry out teaching based on optoelectronic related course group, aiming at junior students majored in Optoelectronic Information Science and Engineering. " Optoelectronic System Course Project " is product-designing-oriented and lasts for a whole semester. It provides a chance for students to experience the whole process of product designing, and improve their abilities to search literature, proof schemes, design and implement their schemes. In teaching process, each project topic is carefully selected and repeatedly refined to guarantee the projects with the knowledge integrity, engineering meanings and enjoyment. Moreover, we set up a top team with professional and experienced teachers, and build up learning community. Meanwhile, the communication between students and teachers as well as the interaction among students are taken seriously in order to improve their team-work ability and communicational skills. Therefore, students are not only able to have a chance to review the knowledge hierarchy of optics, electronics, and computer sciences, but also are able to improve their engineering mindset and innovation consciousness.

High-Fidelity 3D-Nanoprinting via Focused Electron Beams: Computer-Aided Design (3BID)

DOE PAGES

Fowlkes, Jason D.; Winkler, Robert; Lewis, Brett B.; ...

2018-02-14

Currently, there are few techniques that allow true 3D-printing on the nanoscale. The most promising candidate to fill this void is focused electron-beam-induced deposition (FEBID), a resist-free, nanofabrication compatible, direct-write method. The basic working principles of a computer-aided design (CAD) program (3BID) enabling 3D-FEBID is presented and simultaneously released for download. The 3BID capability significantly expands the currently limited toolbox for 3D-nanoprinting, providing access to geometries for optoelectronic, plasmonic, and nanomagnetic applications that were previously unattainable due to the lack of a suitable method for synthesis. In conclusion, the CAD approach supplants trial and error toward more precise/accurate FEBID requiredmore » for real applications/device prototyping.« less

High-Fidelity 3D-Nanoprinting via Focused Electron Beams: Computer-Aided Design (3BID)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fowlkes, Jason D.; Winkler, Robert; Lewis, Brett B.

Currently, there are few techniques that allow true 3D-printing on the nanoscale. The most promising candidate to fill this void is focused electron-beam-induced deposition (FEBID), a resist-free, nanofabrication compatible, direct-write method. The basic working principles of a computer-aided design (CAD) program (3BID) enabling 3D-FEBID is presented and simultaneously released for download. The 3BID capability significantly expands the currently limited toolbox for 3D-nanoprinting, providing access to geometries for optoelectronic, plasmonic, and nanomagnetic applications that were previously unattainable due to the lack of a suitable method for synthesis. In conclusion, the CAD approach supplants trial and error toward more precise/accurate FEBID requiredmore » for real applications/device prototyping.« less

GaAs Optoelectronic Integrated-Circuit Neurons

NASA Technical Reports Server (NTRS)

Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

1992-01-01

Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

Nanoscale imaging of whole cells using a liquid enclosure and a scanning transmission electron microscope.

PubMed

Peckys, Diana B; Veith, Gabriel M; Joy, David C; de Jonge, Niels

2009-12-14

Nanoscale imaging techniques are needed to investigate cellular function at the level of individual proteins and to study the interaction of nanomaterials with biological systems. We imaged whole fixed cells in liquid state with a scanning transmission electron microscope (STEM) using a micrometer-sized liquid enclosure with electron transparent windows providing a wet specimen environment. Wet-STEM images were obtained of fixed E. coli bacteria labeled with gold nanoparticles attached to surface membrane proteins. Mammalian cells (COS7) were incubated with gold-tagged epidermal growth factor and fixed. STEM imaging of these cells resulted in a resolution of 3 nm for the gold nanoparticles. The wet-STEM method has several advantages over conventional imaging techniques. Most important is the capability to image whole fixed cells in a wet environment with nanometer resolution, which can be used, e.g., to map individual protein distributions in/on whole cells. The sample preparation is compatible with that used for fluorescent microscopy on fixed cells for experiments involving nanoparticles. Thirdly, the system is rather simple and involves only minimal new equipment in an electron microscopy (EM) laboratory.

Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

DOE PAGES

Cho, Seungho; Yun, Chao; Tappertzhofen, Stefan; ...

2016-08-05

Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO 2 and SrTiO 3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (~10 12 inch –2). Here, we systematicallymore » show that these devices allow precise engineering of the resistance states, thus enabling large on–off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.« less

Analytical electron tomography mapping of the SiCporeoxidation at the nanoscale

NASA Astrophysics Data System (ADS)

Florea, Ileana; Ersen, Ovidiu; Hirlimann, Charles; Roiban, Lucian; Deneuve, Adrien; Houllé, Matthieu; Janowska, Izabela; Nguyen, Patrick; Pham, Charlotte; Pham-Huu, Cuong

2010-12-01

Silicon carbide is a ceramic material that has been widely studied because of its potential applications, ranging from electronics to heterogeneous catalysis. Recently, a new type of SiC materials with a medium specific surface area and thermal conductivity, called β-SiC, has attracted overgrowing interest as a new class of catalyst support in several catalytic reactions. A primary electron tomography study, performed in usual mode, has revealed a dual surface structure defined by two types of porosities made of networks of connected channels with sizes larger than 50 nm and ink-bottled pores with sizes spanning from 4 to 50 nm. Depending on the solvent nature, metal nanoparticles could be selectively deposited inside one of the two porosities, a fact that illustrates a selective wetting titration of the two types of surfaces by different liquids. The explaining hypothesis that has been put forward was that this selectivity against solvents is related to the pore surface oxidation degree of the two types of pores. A new technique of analytical electron tomography, where the series of projections used to reconstruct the volume of an object is recorded in energy filtered mode (EFTEM), has been implemented to map the poreoxidation state and to correlate it with the morphology and the accessibility of the porous network. Applied, for the first time, at a nanoscale resolution, this technique allowed us to obtain 3D elemental maps of different elements present in the analysed porous grains, in particular oxygen; we found thus that the interconnected channelpores are more rapidly oxidized than the ink-bottled ones. Alternatively, our study highlights the great interest of this method that opens the way for obtaining precise information on the chemical composition of a 3D surface at a nanometer scale.Silicon carbide is a ceramic material that has been widely studied because of its potential applications, ranging from electronics to heterogeneous catalysis. Recently, a new

Opto-electronic oscillator: moving toward solutions based on polymer materials

NASA Astrophysics Data System (ADS)

Nguyên, Lâm Duy; Journet, Bernard; Zyss, Joseph

2008-02-01

Optoelectronic oscillators have been studied since many years now, their high spectral purity being one of their most interesting quality for photonics signal processing, communication or radio over fiber systems. One part of the structure is a long fiber optic feedback loop acting as a delay line. Different techniques have been introduced such as multiple loops in order to get very narrow spectral lines and large mode spacing. One of the problems due to long fiber loops is the size and the requirement of temperature control. In order to go toward integrated solutions it is also possible to introduce optical resonators instead of a delay line structure (as for classical electronic oscillators). But such resonators should present very high quality factor. In this paper we demonstrate solutions using resonators based on polymer materials such as PMMA-DCM. Structures such as micro-rings, micro-disks or stadium-shaped resonator have been realized at the laboratory. Quality factor of 6000 have already been achieved leading to an equivalent fiber loop of 19 m for an oscillator at 10 GHz. But it has been already theoretically proved that quality factor greater than one thousand hundred could be obtained. These resonators can be directly implemented with Mach-Zehnder optical modulators based on electro-optic polymer such as PMMA-DR1 leading to integrated solutions. And in the future it should be also possible to add a laser made with polymer material, with a structure as stadium-shape polymer micro-laser. The fully integrated photonic chip is not so far. The last important function to be implemented is the tuning of the oscillation frequency.

Effective grain pinning revealed by nanoscale electron tomography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Y. Q.; Tang, W.; Dennis, K. W.

2011-03-21

The grain pinning behavior of TiC particles in a rapidly solidified MRE-Fe-B (MRE = Nd + Y + Dy) nanocrystalline hard magnet was studied using electron tomography (ET). The 3D reconstruction overcomes the inherent 2D nature of conventional transmission electronmicroscopy (TEM) to reveal how this grain boundary phase controls the nanoscale structure in the rapidly solidified alloy. The 3D reconstruction was performed on the optimally annealed alloy (750 C/15 min) with hard magnetic properties of M{sub r} = 8.1 kGs, H{sub c} = 6.2 kOe, (BH){sub max} = 11.2 MGOe measured at 300 k. The sampled volume, 425 x 425more » x 92.5 nm{sup 3}, contains more than 20 grains of the RE2-14-1 phase and more than 70 TiC nanoparticles. The TiC grains shapes depend on their sizes and locations along the grain boundary. Most of the TiC particles are oval or short rod like shapes and range from 5 nm to 10 nm. TiC particles less than 10 nm formed between adjacent 2-14-1 grains, while the largest ones formed at triple junctions. There are -1.7 x 10{sup 8} TiC particles within a 1 mm{sup 3} volume in the alloy. This accounts for the strong grain boundary pinning effect, which limits grain growth during annealing.« less

Hydrogen-Bonded Organic Semiconductor Micro- And Nanocrystals: From Colloidal Syntheses to (Opto-)Electronic Devices

PubMed Central

2014-01-01

Organic pigments such as indigos, quinacridones, and phthalocyanines are widely produced industrially as colorants for everyday products as various as cosmetics and printing inks. Herein we introduce a general procedure to transform commercially available insoluble microcrystalline pigment powders into colloidal solutions of variously sized and shaped semiconductor micro- and nanocrystals. The synthesis is based on the transformation of the pigments into soluble dyes by introducing transient protecting groups on the secondary amine moieties, followed by controlled deprotection in solution. Three deprotection methods are demonstrated: thermal cleavage, acid-catalyzed deprotection, and amine-induced deprotection. During these processes, ligands are introduced to afford colloidal stability and to provide dedicated surface functionality and for size and shape control. The resulting micro- and nanocrystals exhibit a wide range of optical absorption and photoluminescence over spectral regions from the visible to the near-infrared. Due to excellent colloidal solubility offered by the ligands, the achieved organic nanocrystals are suitable for solution processing of (opto)electronic devices. As examples, phthalocyanine nanowire transistors as well as quinacridone nanocrystal photodetectors, with photoresponsivity values by far outperforming those of vacuum deposited reference samples, are demonstrated. The high responsivity is enabled by photoinduced charge transfer between the nanocrystals and the directly attached electron-accepting vitamin B2 ligands. The semiconducting nanocrystals described here offer a cheap, nontoxic, and environmentally friendly alternative to inorganic nanocrystals as well as a new paradigm for obtaining organic semiconductor materials from commercial colorants. PMID:25253644

Enhanced reactivity of nanoscale iron particles through a vacuum annealing process

NASA Astrophysics Data System (ADS)

Riba, Olga; Barnes, Robert J.; Scott, Thomas B.; Gardner, Murray N.; Jackman, Simon A.; Thompson, Ian P.

2011-10-01

A reactivity study was undertaken to compare and assess the rate of dechlorination of chlorinated aliphatic hydrocarbons (CAHs) by annealed and non-annealed nanoscale iron particles. The current study aims to resolve the uncertainties in recently published work studying the effect of the annealing process on the reduction capability of nanoscale Fe particles. Comparison of the normalized rate constants (m2/h/L) obtained for dechlorination reactions of trichloroethene (TCE) and cis-1,2-dichloroethene (cis-1,2-DCE) indicated that annealing nanoscale Fe particles increases their reactivity 30-fold. An electron transfer reaction mechanism for both types of nanoscale particles was found to be responsible for CAH dechlorination, rather than a reduction reaction by activated H2 on the particle surface (i.e., hydrogenation, hydrogenolysis). Surface analysis of the particulate material using X-ray diffraction (XRD) and transmission electron microscopy (TEM) together with surface area measurement by Brunauer, Emmett, Teller (BET) indicate that the vacuum annealing process decreases the surface area and increases crystallinity. BET surface area analysis recorded a decrease in nanoscale Fe particle surface area from 19.0 to 4.8 m2/g and crystallite dimensions inside the particle increased from 8.7 to 18.2 nm as a result of annealing.

Nanoscale patterning of electronic devices at the amorphous LaAlO3/SrTiO3 oxide interface using an electron sensitive polymer mask

NASA Astrophysics Data System (ADS)

Bjørlig, Anders V.; von Soosten, Merlin; Erlandsen, Ricci; Dahm, Rasmus Tindal; Zhang, Yu; Gan, Yulin; Chen, Yunzhong; Pryds, Nini; Jespersen, Thomas S.

2018-04-01

A simple approach is presented for designing complex oxide mesoscopic electronic devices based on the conducting interfaces of room temperature grown LaAlO3/SrTiO3 heterostructures. The technique is based entirely on methods known from conventional semiconductor processing technology, and we demonstrate a lateral resolution of ˜100 nm. We study the low temperature transport properties of nanoscale wires and demonstrate the feasibility of the technique for defining in-plane gates allowing local control of the electrostatic environment in mesoscopic devices.

``New'' energy states lead to phonon-less optoelectronic properties in nanostructured silicon

NASA Astrophysics Data System (ADS)

Singh, Vivek; Yu, Yixuan; Korgel, Brian; Nagpal, Prashant

2014-03-01

Silicon is arguably one of the most important technological material for electronic applications. However, indirect bandgap of silicon semiconductor has prevented optoelectronic applications due to phonon assistance required for photon light absorption/emission. Here we show, that previously unexplored surface states in nanostructured silicon can couple with quantum-confined energy levels, leading to phonon-less exciton-recombination and photoluminescence. We demonstrate size dependence (2.4 - 8.3 nm) of this coupling observed in small uniform silicon nanocrystallites, or quantum-dots, by direct measurements of their electronic density of states and low temperature measurements. To enhance the optical absorption of the these silicon quantum-dots, we utilize generation of resonant surface plasmon polariton waves, which leads to several fold increase in observed spectrally-resolved photocurrent near the quantum-confined bandedge states. Therefore, these enhanced light emission and absorption enhancement can have important implications for applications of nanostructured silicon for optoelectronic applications in photovoltaics and LEDs.

Characterization of shape and deformation of MEMS by quantitative optoelectronic metrology techniques

NASA Astrophysics Data System (ADS)

Furlong, Cosme; Pryputniewicz, Ryszard J.

2002-06-01

Recent technological trends based on miniaturization of mechanical, electro-mechanical, and photonic devices to the microscopic scale, have led to the development of microelectromechanical systems (MEMS). Effective development of MEMS components requires the synergism of advanced design, analysis, and fabrication methodologies, and also of quantitative metrology techniques for characterizing their performance, reliability, and integrity during the electronic packaging cycle. In this paper, we describe opto-electronic techniques for measuring, with sub-micrometer accuracy, shape and changes in states of deformation of MEMS strictures. With the described opto-electronic techniques, it is possible to characterize MEMS components using the display and data modes. In the display mode, interferometric information related to shape and deformation is displayed at video frame rates, providing the capability for adjusting and setting experimental conditions. In the data mode, interferometric information related to shape and deformation is recorded as high-spatial and high-digital resolution images, which are further processed to provide quantitative 3D information. Furthermore, the quantitative 3D data are exported to computer-aided design (CAD) environments and utilized for analysis and optimization of MEMS devices. Capabilities of opto- electronic techniques are illustrated with representative applications demonstrating their applicability to provide indispensable quantitative information for the effective development and optimization of MEMS devices.

Preserving π-conjugation in covalently functionalized carbon nanotubes for optoelectronic applications.

PubMed

Setaro, Antonio; Adeli, Mohsen; Glaeske, Mareen; Przyrembel, Daniel; Bisswanger, Timo; Gordeev, Georgy; Maschietto, Federica; Faghani, Abbas; Paulus, Beate; Weinelt, Martin; Arenal, Raul; Haag, Rainer; Reich, Stephanie

2017-01-30

Covalent functionalization tailors carbon nanotubes for a wide range of applications in varying environments. Its strength and stability of attachment come at the price of degrading the carbon nanotubes sp 2 network and destroying the tubes electronic and optoelectronic features. Here we present a non-destructive, covalent, gram-scale functionalization of single-walled carbon nanotubes by a new [2+1] cycloaddition. The reaction rebuilds the extended π-network, thereby retaining the outstanding quantum optoelectronic properties of carbon nanotubes, including bright light emission at high degree of functionalization (1 group per 25 carbon atoms). The conjugation method described here opens the way for advanced tailoring nanotubes as demonstrated for light-triggered reversible doping through photochromic molecular switches and nanoplasmonic gold-nanotube hybrids with enhanced infrared light emission.

Dopant atoms as quantum components in silicon nanoscale devices

NASA Astrophysics Data System (ADS)

Zhao, Xiaosong; Han, Weihua; Wang, Hao; Ma, Liuhong; Li, Xiaoming; Zhang, Wang; Yan, Wei; Yang, Fuhua

2018-06-01

Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore's law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics. Project supported by National Key R&D Program of China (No. 2016YFA0200503).

Nanoscale diffractive probing of strain dynamics in ultrafast transmission electron microscopy

PubMed Central

Feist, Armin; Rubiano da Silva, Nara; Liang, Wenxi; Ropers, Claus; Schäfer, Sascha

2018-01-01

The control of optically driven high-frequency strain waves in nanostructured systems is an essential ingredient for the further development of nanophononics. However, broadly applicable experimental means to quantitatively map such structural distortion on their intrinsic ultrafast time and nanometer length scales are still lacking. Here, we introduce ultrafast convergent beam electron diffraction with a nanoscale probe beam for the quantitative retrieval of the time-dependent local deformation gradient tensor. We demonstrate its capabilities by investigating the ultrafast acoustic deformations close to the edge of a single-crystalline graphite membrane. Tracking the structural distortion with a 28-nm/700-fs spatio-temporal resolution, we observe an acoustic membrane breathing mode with spatially modulated amplitude, governed by the optical near field structure at the membrane edge. Furthermore, an in-plane polarized acoustic shock wave is launched at the membrane edge, which triggers secondary acoustic shear waves with a pronounced spatio-temporal dependency. The experimental findings are compared to numerical acoustic wave simulations in the continuous medium limit, highlighting the importance of microscopic dissipation mechanisms and ballistic transport channels. PMID:29464187

Nanoscale diffractive probing of strain dynamics in ultrafast transmission electron microscopy.

PubMed

Feist, Armin; Rubiano da Silva, Nara; Liang, Wenxi; Ropers, Claus; Schäfer, Sascha

2018-01-01

The control of optically driven high-frequency strain waves in nanostructured systems is an essential ingredient for the further development of nanophononics. However, broadly applicable experimental means to quantitatively map such structural distortion on their intrinsic ultrafast time and nanometer length scales are still lacking. Here, we introduce ultrafast convergent beam electron diffraction with a nanoscale probe beam for the quantitative retrieval of the time-dependent local deformation gradient tensor. We demonstrate its capabilities by investigating the ultrafast acoustic deformations close to the edge of a single-crystalline graphite membrane. Tracking the structural distortion with a 28-nm/700-fs spatio-temporal resolution, we observe an acoustic membrane breathing mode with spatially modulated amplitude, governed by the optical near field structure at the membrane edge. Furthermore, an in-plane polarized acoustic shock wave is launched at the membrane edge, which triggers secondary acoustic shear waves with a pronounced spatio-temporal dependency. The experimental findings are compared to numerical acoustic wave simulations in the continuous medium limit, highlighting the importance of microscopic dissipation mechanisms and ballistic transport channels.

1.31-1.55-µm Hybrid integrated optoelectronic receiver using low-loss quasi-monolithic integration technology

NASA Astrophysics Data System (ADS)

Luo, Yang; Huang, Yongqing; Ren, Xiaomin; Duan, Xiaofeng; Wang, Qi

2014-01-01

In order to integrate photonic devices with electronic devices to realize the low-loss hybrid integrated devices. A wide spectral hybrid integrated optoelectronic receiver was fabricated by using quasi-monolithic integration technology (QMIT) in this paper. It consisted of a 8.5 GHz InGaAs photodetector and a 1.25 Gbps mature transimpedance pre-amplifier (TIA) complementrary metal oxide semiconductor (CMOS) chip. The Au layer was deposited on a designed Si platform to form planar waveguide electrode which replaced a part of bonding wire, so it reduced the parasitic parameters of the optoelectronic receiver, and then enhanced high-speed response characteristics and the stability of the hybrid integrated receiver. Finally, a 3 Gbps clear open eye diagram of the hybrid integrated optoelectronic receiver was obtained.

Reduction of aqueous CrVI using nanoscale zero-valent iron dispersed by high energy electron beam irradiation.

PubMed

Zhang, Jing; Zhang, Guilong; Wang, Min; Zheng, Kang; Cai, Dongqing; Wu, Zhengyan

2013-10-21

High energy electron beam (HEEB) irradiation was used to disperse nanoscale zero-valent iron (NZVI) for reduction of CrVI to CrIII in aqueous solution. Pore size distribution, scanning electron microscopy and X-ray diffraction characterizations demonstrated that HEEB irradiation could effectively increase the dispersion of NZVI resulting in more active reduction sites of Crvi on NZVI. Batch reduction experiments indicated that the reductive capacity of HEEB irradiation-modified NZVI (IMNZVI) was significantly improved, as the reductive efficiency reached 99.79% under the optimal conditions (electron beam dose of 30 kGy at 10 MeV, pH 2.0 and 313 K) compared with that of raw NZVI (72.14%). Additionally, the NZVI was stable for at least two months after irradiation. The modification mechanism of NZVI by HEEB irradiation was investigated and the results indicated that charge and thermal effects might play key roles in dispersing the NZVI particles.

Nanoscale Electronic Conditioning for Improvement of Nanowire Light-Emitting-Diode Efficiency.

PubMed

May, Brelon J; Belz, Matthew R; Ahamed, Arshad; Sarwar, A T M G; Selcu, Camelia M; Myers, Roberto C

2018-04-24

Commercial III-Nitride LEDs and lasers spanning visible and ultraviolet wavelengths are based on epitaxial films. Alternatively, nanowire-based III-Nitride optoelectronics offer the advantage of strain compliance and high crystalline quality growth on a variety of inexpensive substrates. However, nanowire LEDs exhibit an inherent property distribution, resulting in uneven current spreading through macroscopic devices that consist of millions of individual nanowire diodes connected in parallel. Despite being electrically connected, only a small fraction of nanowires, sometimes <1%, contribute to the electroluminescence (EL). Here, we show that a population of electrical shorts exists in the devices, consisting of a subset of low-resistance nanowires that pass a large portion of the total current in the ensemble devices. Burn-in electronic conditioning is performed by applying a short-term overload voltage; the nanoshorts experience very high current density, sufficient to render them open circuits, thereby forcing a new current path through more nanowire LEDs in an ensemble device. Current-voltage measurements of individual nanowires are acquired using conductive atomic force microscopy to observe the removal of nanoshorts using burn-in. In macroscopic devices, this results in a 33× increase in peak EL and reduced leakage current. Burn-in conditioning of nanowire ensembles therefore provides a straightforward method to mitigate nonuniformities inherent to nanowire devices.

EDITORIAL: Nanoscale metrology Nanoscale metrology

NASA Astrophysics Data System (ADS)

Picotto, G. B.; Koenders, L.; Wilkening, G.

2009-08-01

Instrumentation and measurement techniques at the nanoscale play a crucial role not only in extending our knowledge of the properties of matter and processes in nanosciences, but also in addressing new measurement needs in process control and quality assurance in industry. Micro- and nanotechnologies are now facing a growing demand for quantitative measurements to support the reliability, safety and competitiveness of products and services. Quantitative measurements presuppose reliable and stable instruments and measurement procedures as well as suitable calibration artefacts to ensure the quality of measurements and traceability to standards. This special issue of Measurement Science and Technology presents selected contributions from the Nanoscale 2008 seminar held at the Istituto Nazionale di Ricerca Metrologica (INRIM), Torino, in September 2008. This was the 4th Seminar on Nanoscale Calibration Standards and Methods and the 8th Seminar on Quantitative Microscopy (the first being held in 1995). The seminar was jointly organized by the Nanometrology Group within EUROMET (The European Collaboration in Measurement Standards), the German Nanotechnology Competence Centre 'Ultraprecise Surface Figuring' (CC-UPOB), the Physikalisch-Technische Bundesanstalt (PTB) and INRIM. A special event during the seminar was the 'knighting' of Günter Wilkening from PTB, Braunschweig, Germany, as the 1st Knight of Dimensional Nanometrology. Günter Wilkening received the NanoKnight Award for his outstanding work in the field of dimensional nanometrology over the last 20 years. The contributions in this special issue deal with the developments and improvements of instrumentation and measurement methods for scanning force microscopy (SFM), electron and optical microscopy, high-resolution interferometry, calibration of instruments and new standards, new facilities and applications including critical dimension (CD) measurements on small and medium structures and nanoparticle

Voltage control of nanoscale magnetoelastic elements: theory and experiments (Presentation Recording)

NASA Astrophysics Data System (ADS)

Carman, Gregory P.

2015-09-01

Electromagnetic devices rely on electrical currents to generate magnetic fields. While extremely useful this approach has limitations in the small-scale. To overcome the scaling problem, researchers have tried to use electric fields to manipulate a magnetic material's intrinsic magnetization (i.e. multiferroic). The strain mediated class of multiferroics offers up to 70% of energy transduction using available piezoelectric and magnetoelastic materials. While strain mediated multiferroic is promising, few studies exist on modeling/testing of nanoscale magnetic structures. This talk presents motivation, analytical models, and experimental data on electrical control of nanoscale single magnetic domain structures. This research is conducted in a NSF Engineering Research Center entitled Translational Applications for Nanoscale Multiferroics TANMS. The models combine micromagnetics (Landau-Lifshitz-Gilbert) with elastodynamics using the electrostatic approximation producing eight fully coupled nonlinear partial differential equations. Qualitative and quantitative verification is achieved with direct comparison to experimental data. The modeling effort guides fabrication and testing on three elements, i.e. nanoscale rings (onion states), ellipses (single domain reorientation), and superparamagnetic elements. Experimental results demonstrate electrical and deterministic control of the magnetic states in the 5-500 nm structures as measured with Photoemission Electron Microscopy PEEM, Magnetic Force Microscopy MFM, or Lorentz Transmission Electron Microscopy TEM. These data strongly suggests efficient control of nanoscale magnetic spin states is possible with voltage.

InGaAlAsPN: A Materials System for Silicon Based Optoelectronics and Heterostructure Device Technologies

NASA Technical Reports Server (NTRS)

Broekaert, T. P. E.; Tang, S.; Wallace, R. M.; Beam, E. A., III; Duncan, W. M.; Kao, Y. -C.; Liu, H. -Y.

1995-01-01

A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon.

Optoelectronics-related competence building in Japanese and Western firms

NASA Astrophysics Data System (ADS)

Miyazaki, Kumiko

1992-05-01

In this paper, an analysis is made of how different firms in Japan and the West have developed competence related to optoelectronics on the basis of their previous experience and corporate strategies. The sample consists of a set of seven Japanese and four Western firms in the industrial, consumer electronics and materials sectors. Optoelectronics is divided into subfields including optical communications systems, optical fibers, optoelectronic key components, liquid crystal displays, optical disks, and others. The relative strengths and weaknesses of companies in the various subfields are determined using the INSPEC database, from 1976 to 1989. Parallel data are analyzed using OTAF U.S. patent statistics and the two sets of data are compared. The statistical analysis from the database is summarized for firms in each subfield in the form of an intra-firm technology index (IFTI), a new technique introduced to assess the revealed technology advantage of firms. The quantitative evaluation is complemented by results from intensive interviews with the management and scientists of the firms involved. The findings show that there is a marked variation in the way firms' technological trajectories have evolved giving rise to strength in some and weakness in other subfields for the different companies, which are related to their accumulated core competencies, previous core business activities, organizational, marketing, and competitive factors.

Nanoscale Imaging of Whole Cells Using a Liquid Enclosure and a Scanning Transmission Electron Microscope

PubMed Central

Peckys, Diana B.; Veith, Gabriel M.; Joy, David C.; de Jonge, Niels

2009-01-01

Nanoscale imaging techniques are needed to investigate cellular function at the level of individual proteins and to study the interaction of nanomaterials with biological systems. We imaged whole fixed cells in liquid state with a scanning transmission electron microscope (STEM) using a micrometer-sized liquid enclosure with electron transparent windows providing a wet specimen environment. Wet-STEM images were obtained of fixed E. coli bacteria labeled with gold nanoparticles attached to surface membrane proteins. Mammalian cells (COS7) were incubated with gold-tagged epidermal growth factor and fixed. STEM imaging of these cells resulted in a resolution of 3 nm for the gold nanoparticles. The wet-STEM method has several advantages over conventional imaging techniques. Most important is the capability to image whole fixed cells in a wet environment with nanometer resolution, which can be used, e.g., to map individual protein distributions in/on whole cells. The sample preparation is compatible with that used for fluorescent microscopy on fixed cells for experiments involving nanoparticles. Thirdly, the system is rather simple and involves only minimal new equipment in an electron microscopy (EM) laboratory. PMID:20020038

Modification of opto-electronic properties of ZnO by incorporating metallic tin for buffer layer in thin film solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deepu, D. R.; Jubimol, J.; Kartha, C. Sudha

2015-06-24

In this report, the effect of incorporation of metallic tin (Sn) on opto-electronic properties of ZnO thin films is presented. ZnO thin films were deposited through ‘automated chemical spray pyrolysis’ (CSP) technique; later different quantities of ‘Sn’ were evaporated on it and subsequently annealed. Vacuum annealing showed a positive effect on crystallinity of films. Creation of sub band gap levels due to ‘Sn’ diffusion was evident from the absorption and PL spectra. The tin incorporated films showed good photo response in visible region. Tin incorporated ZnO thin films seem to satisfy the desirable criteria for buffer layer in thin filmmore » solar cells.« less

Recent Advances in Biointegrated Optoelectronic Devices.

PubMed

Xu, Huihua; Yin, Lan; Liu, Chuan; Sheng, Xing; Zhao, Ni

2018-05-28

With recent progress in the design of materials and mechanics, opportunities have arisen to improve optoelectronic devices, circuits, and systems in curved, flexible, stretchable, and biocompatible formats, thereby enabling integration of customized optoelectronic devices and biological systems. Here, the core material technologies of biointegrated optoelectronic platforms are discussed. An overview of the design and fabrication methods to form semiconductor materials and devices in flexible and stretchable formats is presented, strategies incorporating various heterogeneous substrates, interfaces, and encapsulants are discussed, and their applications in biomimetic, wearable, and implantable systems are highlighted. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Limitations of opto-electronic neural networks

NASA Technical Reports Server (NTRS)

Yu, Jeffrey; Johnston, Alan; Psaltis, Demetri; Brady, David

1989-01-01

Consideration is given to the limitations of implementing neurons, weights, and connections in neural networks for electronics and optics. It is shown that the advantages of each technology are utilized when electronically fabricated neurons are included and a combination of optics and electronics are employed for the weights and connections. The relationship between the types of neural networks being constructed and the choice of technologies to implement the weights and connections is examined.

Segmented nanowires displaying locally controllable properties

DOEpatents

Sutter, Eli Anguelova; Sutter, Peter Werner

2013-03-05

Vapor-liquid-solid growth of nanowires is tailored to achieve complex one-dimensional material geometries using phase diagrams determined for nanoscale materials. Segmented one-dimensional nanowires having constant composition display locally variable electronic band structures that are determined by the diameter of the nanowires. The unique electrical and optical properties of the segmented nanowires are exploited to form electronic and optoelectronic devices. Using gold-germanium as a model system, in situ transmission electron microscopy establishes, for nanometer-sized Au--Ge alloy drops at the tips of Ge nanowires (NWs), the parts of the phase diagram that determine their temperature-dependent equilibrium composition. The nanoscale phase diagram is then used to determine the exchange of material between the NW and the drop. The phase diagram for the nanoscale drop deviates significantly from that of the bulk alloy.

Stable and metastable nanowires displaying locally controllable properties

DOEpatents

Sutter, Eli Anguelova; Sutter, Peter Werner

2014-11-18

Vapor-liquid-solid growth of nanowires is tailored to achieve complex one-dimensional material geometries using phase diagrams determined for nanoscale materials. Segmented one-dimensional nanowires having constant composition display locally variable electronic band structures that are determined by the diameter of the nanowires. The unique electrical and optical properties of the segmented nanowires are exploited to form electronic and optoelectronic devices. Using gold-germanium as a model system, in situ transmission electron microscopy establishes, for nanometer-sized Au--Ge alloy drops at the tips of Ge nanowires (NWs), the parts of the phase diagram that determine their temperature-dependent equilibrium composition. The nanoscale phase diagram is then used to determine the exchange of material between the NW and the drop. The phase diagram for the nanoscale drop deviates significantly from that of the bulk alloy.

Nanoscale inhomogeneity and photoacid generation dynamics in extreme ultraviolet resist materials

NASA Astrophysics Data System (ADS)

Wu, Ping-Jui; Wang, Yu-Fu; Chen, Wei-Chi; Wang, Chien-Wei; Cheng, Joy; Chang, Vencent; Chang, Ching-Yu; Lin, John; Cheng, Yuan-Chung

2018-03-01

The development of extreme ultraviolet (EUV) lithography towards the 22 nm node and beyond depends critically on the availability of resist materials that meet stringent control requirements in resolution, line edge roughness, and sensitivity. However, the molecular mechanisms that govern the structure-function relationships in current EUV resist systems are not well understood. In particular, the nanoscale structures of the polymer base and the distributions of photoacid generators (PAGs) should play a critical roles in the performance of a resist system, yet currently available models for photochemical reactions in EUV resist systems are exclusively based on homogeneous bulk models that ignore molecular-level details of solid resist films. In this work, we investigate how microscopic molecular organizations in EUV resist affect photoacid generations in a bottom-up approach that describes structure-dependent electron-transfer dynamics in a solid film model. To this end, molecular dynamics simulations and stimulated annealing are used to obtain structures of a large simulation box containing poly(4-hydroxystyrene) (PHS) base polymers and triphenylsulfonium based PAGs. Our calculations reveal that ion-pair interactions govern the microscopic distributions of the polymer base and PAG molecules, resulting in a highly inhomogeneous system with nonuniform nanoscale chemical domains. Furthermore, the theoretical structures were used in combination of quantum chemical calculations and the Marcus theory to evaluate electron transfer rates between molecular sites, and then kinetic Monte Carlo simulations were carried out to model electron transfer dynamics with molecular structure details taken into consideration. As a result, the portion of thermalized electrons that are absorbed by the PAGs and the nanoscale spatial distribution of generated acids can be estimated. Our data reveal that the nanoscale inhomogeneous distributions of base polymers and PAGs strongly affect the

Strong electrically tunable MoTe2/graphene van der Waals heterostructures for high-performance electronic and optoelectronic devices

NASA Astrophysics Data System (ADS)

Wang, Feng; Yin, Lei; Wang, Zhenxing; Xu, Kai; Wang, Fengmei; Shifa, Tofik Ahmed; Huang, Yun; Wen, Yao; Jiang, Chao; He, Jun

2016-11-01

MoTe2 is an emerging two-dimensional layered material showing ambipolar/p-type conductivity, which makes it an important supplement to n-type two-dimensional layered material like MoS2. However, the properties based on its van der Waals heterostructures have been rarely studied. Here, taking advantage of the strong Fermi level tunability of monolayer graphene (G) and the feature of van der Waals interfaces that is free from Fermi level pinning effect, we fabricate G/MoTe2/G van der Waals heterostructures and systematically study the electronic and optoelectronic properties. We demonstrate the G/MoTe2/G FETs with low Schottky barriers for both holes (55.09 meV) and electrons (122.37 meV). Moreover, the G/MoTe2/G phototransistors show high photoresponse performances with on/off ratio, responsivity, and detectivity of ˜105, 87 A/W, and 1012 Jones, respectively. Finally, we find the response time of the phototransistors is effectively tunable and a mechanism therein is proposed to explain our observation. This work provides an alternative choice of contact for high-performance devices based on p-type and ambipolar two-dimensional layered materials.

Study on optoelectronic properties of Spiro-CN for developing an efficient OLED

NASA Astrophysics Data System (ADS)

Mishra, Ashok Kumar

2018-05-01

There are a class of organic molecules and polymers which exhibit semiconductor behavior because of nearly free conjugate π-electrons. Hopping of these electrons in molecules forms different excited singlet and triplet states named as excitons. Some of these organic molecules can be set to emit photons by triplet-singlet excitonic transition via a process called Thermally Activated Delayed Fluorescence (TADF) which is exploited for designing the Organic Light Emitting diode (OLED.) Spiro-CN (spirobifluorene skeletons) Spiro is one of these reported noble metal-free TADF molecules which offers unique optical and electronic properties arising from the efficient transition and reverse intersystem crossing between the lowest singlet (S) and triplet (T) excited states. Its ability to harvest triplet excitons for fluorescence through facilitated reverse intersystem crossing (T→S) could directly impact their properties and performances, which is attractive for a wide variety of low-cost optoelectronic device. In the present study, the Spiro-CN compounds have been taken up for the investigation of various optoelectronic properties including the thermally activated delayed fluorescence (TADF) by using the Koopmans Method and Density Functional Theory. The present study discusses the utility of the Spiro-CN organic semiconductor as a suitable TADF material essential for developing an efficient Organic Light Emitting Diode (OLED).

Direct Photolithography on Molecular Crystals for High Performance Organic Optoelectronic Devices.

PubMed

Yao, Yifan; Zhang, Lei; Leydecker, Tim; Samorì, Paolo

2018-05-23

Organic crystals are generated via the bottom-up self-assembly of molecular building blocks which are held together through weak noncovalent interactions. Although they revealed extraordinary charge transport characteristics, their labile nature represents a major drawback toward their integration in optoelectronic devices when the use of sophisticated patterning techniques is required. Here we have devised a radically new method to enable the use of photolithography directly on molecular crystals, with a spatial resolution below 300 nm, thereby allowing the precise wiring up of multiple crystals on demand. Two archetypal organic crystals, i.e., p-type 2,7-diphenyl[1]benzothieno[3,2- b][1]benzothiophene (Dph-BTBT) nanoflakes and n-type N, N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) nanowires, have been exploited as active materials to realize high-performance top-contact organic field-effect transistors (OFETs), inverter and p-n heterojunction photovoltaic devices supported on plastic substrate. The compatibility of our direct photolithography technique with organic molecular crystals is key for exploiting the full potential of organic electronics for sophisticated large-area devices and logic circuitries, thus paving the way toward novel applications in plastic (opto)electronics.

Resonant tunnelling diode based high speed optoelectronic transmitters

NASA Astrophysics Data System (ADS)

Wang, Jue; Rodrigues, G. C.; Al-Khalidi, Abdullah; Figueiredo, José M. L.; Wasige, Edward

2017-08-01

Resonant tunneling diode (RTD) integration with photo detector (PD) from epi-layer design shows great potential for combining terahertz (THz) RTD electronic source with high speed optical modulation. With an optimized layer structure, the RTD-PD presented in the paper shows high stationary responsivity of 5 A/W at 1310 nm wavelength. High power microwave/mm-wave RTD-PD optoelectronic oscillators are proposed. The circuitry employs two RTD-PD devices in parallel. The oscillation frequencies range from 20-44 GHz with maximum attainable power about 1 mW at 34/37/44GHz.

Conjugated polymers and their use in optoelectronic devices

DOEpatents

Marks, Tobin J.; Guo, Xugang; Zhou, Nanjia; Chang, Robert P. H.; Drees, Martin; Facchetti, Antonio

2016-10-18

The present invention relates to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The present compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The present compounds can have good solubility in common solvents enabling device fabrication via solution processes.

In-situ Isotopic Analysis at Nanoscale using Parallel Ion Electron Spectrometry: A Powerful New Paradigm for Correlative Microscopy

NASA Astrophysics Data System (ADS)

Yedra, Lluís; Eswara, Santhana; Dowsett, David; Wirtz, Tom

2016-06-01

Isotopic analysis is of paramount importance across the entire gamut of scientific research. To advance the frontiers of knowledge, a technique for nanoscale isotopic analysis is indispensable. Secondary Ion Mass Spectrometry (SIMS) is a well-established technique for analyzing isotopes, but its spatial-resolution is fundamentally limited. Transmission Electron Microscopy (TEM) is a well-known method for high-resolution imaging down to the atomic scale. However, isotopic analysis in TEM is not possible. Here, we introduce a powerful new paradigm for in-situ correlative microscopy called the Parallel Ion Electron Spectrometry by synergizing SIMS with TEM. We demonstrate this technique by distinguishing lithium carbonate nanoparticles according to the isotopic label of lithium, viz. 6Li and 7Li and imaging them at high-resolution by TEM, adding a new dimension to correlative microscopy.

Nanomaterials for Electronics and Optoelectronics

NASA Technical Reports Server (NTRS)

Koehne, Jessica E.; Meyyappan, M.

2011-01-01

Nanomaterials such as carbon nanotubes(CNTs), graphene, and inorganic nanowires(INWs) have shown interesting electronic, mechanical, optical, thermal, and other properties and therefore have been pursued for a variety of applications by the nanotechnology community ranging from electronics to nanocomposites. While the first two are carbon-based materials, the INWs in the literature include silicon, germanium, III-V, II-VI, a variety of oxides, nitrides, antimonides and others. In this talk, first an overview of growth of these three classes of materials by CVD and PECVD will be presented along with results from characterization. Then applications in development of chemical sensors, biosensors, energy storage devices and novel memory architectures will be discussed.

Optoelectronic pH Meter: Further Details

NASA Technical Reports Server (NTRS)

Jeevarajan, Antony S.; Anderson, Mejody M.; Macatangay, Ariel V.

2009-01-01

A collection of documents provides further detailed information about an optoelectronic instrument that measures the pH of an aqueous cell-culture medium to within 0.1 unit in the range from 6.5 to 7.5. The instrument at an earlier stage of development was reported in Optoelectronic Instrument Monitors pH in a Culture Medium (MSC-23107), NASA Tech Briefs, Vol. 28, No. 9 (September 2004), page 4a. To recapitulate: The instrument includes a quartz cuvette through which the medium flows as it is circulated through a bioreactor. The medium contains some phenol red, which is an organic pH-indicator dye. The cuvette sits between a light source and a photodetector. [The light source in the earlier version comprised red (625 nm) and green (558 nm) light-emitting diodes (LEDs); the light source in the present version comprises a single green- (560 nm)-or-red (623 nm) LED.] The red and green are repeatedly flashed in alternation. The responses of the photodiode to the green and red are processed electronically to obtain the ratio between the amounts of green and red light transmitted through the medium. The optical absorbance of the phenol red in the green light varies as a known function of pH. Hence, the pH of the medium can be calculated from the aforesaid ratio.

Nanoscale thermal transport. II. 2003-2012

NASA Astrophysics Data System (ADS)

Cahill, David G.; Braun, Paul V.; Chen, Gang; Clarke, David R.; Fan, Shanhui; Goodson, Kenneth E.; Keblinski, Pawel; King, William P.; Mahan, Gerald D.; Majumdar, Arun; Maris, Humphrey J.; Phillpot, Simon R.; Pop, Eric; Shi, Li

2014-03-01

A diverse spectrum of technology drivers such as improved thermal barriers, higher efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic recording, thermal management of nanoscale electronics, and nanoparticles for thermal medical therapies are motivating studies of the applied physics of thermal transport at the nanoscale. This review emphasizes developments in experiment, theory, and computation in the past ten years and summarizes the present status of the field. Interfaces become increasingly important on small length scales. Research during the past decade has extended studies of interfaces between simple metals and inorganic crystals to interfaces with molecular materials and liquids with systematic control of interface chemistry and physics. At separations on the order of ˜ 1 nm , the science of radiative transport through nanoscale gaps overlaps with thermal conduction by the coupling of electronic and vibrational excitations across weakly bonded or rough interfaces between materials. Major advances in the physics of phonons include first principles calculation of the phonon lifetimes of simple crystals and application of the predicted scattering rates in parameter-free calculations of the thermal conductivity. Progress in the control of thermal transport at the nanoscale is critical to continued advances in the density of information that can be stored in phase change memory devices and new generations of magnetic storage that will use highly localized heat sources to reduce the coercivity of magnetic media. Ultralow thermal conductivity—thermal conductivity below the conventionally predicted minimum thermal conductivity—has been observed in nanolaminates and disordered crystals with strong anisotropy. Advances in metrology by time-domain thermoreflectance have made measurements of the thermal conductivity of a thin layer with micron-scale spatial resolution relatively routine. Scanning thermal microscopy and thermal

Graphene and Carbon-Nanotube Nanohybrids Covalently Functionalized by Porphyrins and Phthalocyanines for Optoelectronic Properties.

PubMed

Wang, Aijian; Ye, Jun; Humphrey, Mark G; Zhang, Chi

2018-04-01

In recent years, there has been a rapid growth in studies of the optoelectronic properties of graphene, carbon nanotubes (CNTs), and their derivatives. The chemical functionalization of graphene and CNTs is a key requirement for the development of this field, but it remains a significant challenge. The focus here is on recent advances in constructing nanohybrids of graphene or CNTs covalently linked to porphyrins or phthalocyanines, as well as their application in nonlinear optics. Following a summary of the syntheses of nanohybrids constructed from graphene or CNTs and porphyrins or phthalocyanines, explicit intraconjugate electronic interactions between photoexcited porphyrins/phthalocyanines and graphene/CNTs are introduced classified by energy transfer, electron transfer, and charge transfer, and their optoelectronic applications are also highlighted. The major current challenges for the development of covalently linked nanohybrids of porphyrins or phthalocyanines and carbon nanostructures are also presented. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Orbital controlled band gap engineering of tetragonal BiFeO 3 for optoelectronic applications

DOE PAGES

Qiao, L.; Zhang, S.; Xiao, H. Y.; ...

2018-01-01

Bismuth ferrite BiFeO 3 (BFO) is an important ferroelectric material for thin-film optoelectronic sensing and potential photovoltaic applications. Its relatively large band gap, however, limits the conversion efficiency of BFO absorber-based PV devices. In this study, based on density functional theory calculations we demonstrate that with well-designed Fe-site elemental substitution, tetragonal BFO can exhibit a much lower fundamental band gap than conventional rhombohedral BFO without forming in-gap electronic states and unravel the underlying mechanisms. Cation atomic size, electronegativity, and crystallographic symmetry are evidenced as critical parameters to tailor the metal 3d – oxygen 2p orbital interactions and thus intrinsically modifymore » electronic structure, particularly, the shape and character of the valence and conduction band edges. With reduced band gap, improved mobility, and uncompromised ferroelectric and magnetic ground states, the present results provide a new strategy of designing high symmetry BFO for efficient optoelectronic applications.« less

Orbital controlled band gap engineering of tetragonal BiFeO 3 for optoelectronic applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiao, L.; Zhang, S.; Xiao, H. Y.

Bismuth ferrite BiFeO 3 (BFO) is an important ferroelectric material for thin-film optoelectronic sensing and potential photovoltaic applications. Its relatively large band gap, however, limits the conversion efficiency of BFO absorber-based PV devices. In this study, based on density functional theory calculations we demonstrate that with well-designed Fe-site elemental substitution, tetragonal BFO can exhibit a much lower fundamental band gap than conventional rhombohedral BFO without forming in-gap electronic states and unravel the underlying mechanisms. Cation atomic size, electronegativity, and crystallographic symmetry are evidenced as critical parameters to tailor the metal 3d – oxygen 2p orbital interactions and thus intrinsically modifymore » electronic structure, particularly, the shape and character of the valence and conduction band edges. With reduced band gap, improved mobility, and uncompromised ferroelectric and magnetic ground states, the present results provide a new strategy of designing high symmetry BFO for efficient optoelectronic applications.« less

Epidermal Inorganic Optoelectronics for Blood Oxygen Measurement.

PubMed

Li, Haicheng; Xu, Yun; Li, Xiaomin; Chen, Ying; Jiang, Yu; Zhang, Changxing; Lu, Bingwei; Wang, Jian; Ma, Yinji; Chen, Yihao; Huang, Yin; Ding, Minquang; Su, Honghong; Song, Guofeng; Luo, Yi; Feng, X

2017-05-01

Flexible and stretchable optoelectronics, built-in inorganic semiconductor materials, offer a wide range of unprecedented opportunities and will redefine the conventional rigid optoelectronics in biological application and medical measurement. However, a significant bottleneck lies in the brittleness nature of rigid semiconductor materials and the performance's extreme sensitivity to the light intensity variation due to human skin deformation while measuring physical parameters. In this study, the authors demonstrate a systematic strategy to design an epidermal inorganic optoelectronic device by using specific strain-isolation design, nanodiamond thinning, and hybrid transfer printing. The authors propose all-in-one suspension structure to achieve the stretchability and conformability for surrounding environment, and they propose a two-step transfer printing method for hybrid integrating III-V group emitting elements, Si-based photodetector, and interconnects. Owing to the excellent flexibility and stretchability, such device is totally conformal to skin and keeps the constant light transmission between emitting element and photodetector as well as the signal stability due to skin deformation. This method opens a route for traditional inorganic optoelectronics to achieve flexibility and stretchability and improve the performance of optoelectronics for biomedical application. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe 2: Enabling nanoscale direct write homo-junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stanford, Michael; Noh, Joo Hyon; Koehler, Michael R.

Atomically thin transition metal dichalcogenides (TMDs) are currently receiving significant attention due to their promising opto-electronic properties. Tuning optical and electrical properties of mono and few-layer TMDs, such as tungsten diselenide (WSe 2), by controlling the defects, is an intriguing opportunity to synthesize next generation two dimensional material opto-electronic devices. Here, we report the effects of focused helium ion beam irradiation on the structural, optical and electrical properties of few-layer WSe 2, via high resolution scanning transmission electron microscopy, Raman spectroscopy, and electrical transport measurements. By controlling the ion irradiation dose, we selectively introduce precise defects in few-layer WSe 2more » thereby locally tuning the resistivity and transport properties of the material. Hole transport in the few layer WSe 2 is degraded more severely relative to electron transport after helium ion irradiation. Moreover, by selectively exposing material with the ion beam, we demonstrate a simple yet highly tunable method to create lateral homo-junctions in few layer WSe 2 flakes, which constitutes an important advance towards two dimensional opto-electronic devices.« less

Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe 2: Enabling nanoscale direct write homo-junctions

DOE PAGES

Stanford, Michael; Noh, Joo Hyon; Koehler, Michael R.; ...

2016-06-06

Atomically thin transition metal dichalcogenides (TMDs) are currently receiving significant attention due to their promising opto-electronic properties. Tuning optical and electrical properties of mono and few-layer TMDs, such as tungsten diselenide (WSe 2), by controlling the defects, is an intriguing opportunity to synthesize next generation two dimensional material opto-electronic devices. Here, we report the effects of focused helium ion beam irradiation on the structural, optical and electrical properties of few-layer WSe 2, via high resolution scanning transmission electron microscopy, Raman spectroscopy, and electrical transport measurements. By controlling the ion irradiation dose, we selectively introduce precise defects in few-layer WSe 2more » thereby locally tuning the resistivity and transport properties of the material. Hole transport in the few layer WSe 2 is degraded more severely relative to electron transport after helium ion irradiation. Moreover, by selectively exposing material with the ion beam, we demonstrate a simple yet highly tunable method to create lateral homo-junctions in few layer WSe 2 flakes, which constitutes an important advance towards two dimensional opto-electronic devices.« less

Electrostatically tunable lateral MoTe2 p-n junction for use in high-performance optoelectronics.

PubMed

Wang, Zhenxing; Wang, Feng; Yin, Lei; Huang, Yun; Xu, Kai; Wang, Fengmei; Zhan, Xueying; He, Jun

2016-07-21

Because of their ultimate thickness, layered structure and high flexibility, pn junctions based on layered two-dimensional semiconductors have been attracting increasing attention recently. In this study, for the first time, we fabricated lateral pn junctions (LPNJs) based on ultrathin MoTe2 by introducing two separated electrostatic back gates, and investigated their electronic and photovoltaic performance. Pn, np, nn, and pp junctions can be easily realized by modulating the conductive channel type using gate voltages with different polarities. Strong rectification effects were observed in the pn and np junctions and the rectification ratio reached ∼5 × 10(4). Importantly, we find a unique phenomenon that the parameters for MoTe2 LPNJs experience abrupt changes during the transition from p to n or n to p. Furthermore, a high performance photovoltaic device with a filling factor of above 51% and electrical conversion efficiency (η) of around 0.5% is achieved. Our findings are of importance to comprehensively understand the electronic and optoelectronic properties of MoTe2 and may further open up novel electronic and optoelectronic device applications.

A Theoretical Review on Interfacial Thermal Transport at the Nanoscale.

PubMed

Zhang, Ping; Yuan, Peng; Jiang, Xiong; Zhai, Siping; Zeng, Jianhua; Xian, Yaoqi; Qin, Hongbo; Yang, Daoguo

2018-01-01

With the development of energy science and electronic technology, interfacial thermal transport has become a key issue for nanoelectronics, nanocomposites, energy transmission, and conservation, etc. The application of thermal interfacial materials and other physical methods can reliably improve the contact between joined surfaces and enhance interfacial thermal transport at the macroscale. With the growing importance of thermal management in micro/nanoscale devices, controlling and tuning the interfacial thermal resistance (ITR) at the nanoscale is an urgent task. This Review examines nanoscale interfacial thermal transport mainly from a theoretical perspective. Traditional theoretical models, multiscale models, and atomistic methodologies for predicting ITR are introduced. Based on the analysis and summary of the factors that influence ITR, new methods to control and reduce ITR at the nanoscale are described in detail. Furthermore, the challenges facing interfacial thermal management and the further progress required in this field are discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tripathy, Sumanta K.; Rajeswari, V. P.

2014-01-28

Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating themore » absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.« less

Strategies for Controlled Placement of Nanoscale Building Blocks

PubMed Central

2007-01-01

The capability of placing individual nanoscale building blocks on exact substrate locations in a controlled manner is one of the key requirements to realize future electronic, optical, and magnetic devices and sensors that are composed of such blocks. This article reviews some important advances in the strategies for controlled placement of nanoscale building blocks. In particular, we will overview template assisted placement that utilizes physical, molecular, or electrostatic templates, DNA-programmed assembly, placement using dielectrophoresis, approaches for non-close-packed assembly of spherical particles, and recent development of focused placement schemes including electrostatic funneling, focused placement via molecular gradient patterns, electrodynamic focusing of charged aerosols, and others. PMID:21794185

A nanoscale vacuum-tube diode triggered by few-cycle laser pulses

NASA Astrophysics Data System (ADS)

Higuchi, Takuya; Maisenbacher, Lothar; Liehl, Andreas; Dombi, Péter; Hommelhoff, Peter

2015-02-01

We propose and demonstrate a nanoscale vacuum-tube diode triggered by few-cycle near-infrared laser pulses. It represents an ultrafast electronic device based on light fields, exploiting near-field optical enhancement at surfaces of two metal nanotips. The sharper of the two tips displays a stronger field-enhancement, resulting in larger photoemission yields at its surface. One laser pulse with a peak intensity of 4.7 × 1011 W/cm2 triggers photoemission of ˜16 electrons from the sharper cathode tip, while emission from the blunter anode tip is suppressed by 19 dB to ˜0.2 electrons per pulse. Thus, the laser-triggered current between two tips exhibit a rectifying behavior, in analogy to classical vacuum-tube diodes. According to the kinetic energy of the emitted electrons and the distance between the tips, the total operation time of this laser-triggered nanoscale diode is estimated to be below 1 ps.

Concept of Quantum Geometry in Optoelectronic Processes in Solids: Application to Solar Cells.

PubMed

Nagaosa, Naoto; Morimoto, Takahiro

2017-07-01

The concept of topology is becoming more and more relevant to the properties and functions of electronic materials including various transport phenomena and optical responses. A pedagogical introduction is given here to the basic ideas and their applications to optoelectronic processes in solids. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Inverted organic electronic and optoelectronic devices

NASA Astrophysics Data System (ADS)

Small, Cephas E.

The research and development of organic electronics for commercial application has received much attention due to the unique properties of organic semiconductors and the potential for low-cost high-throughput manufacturing. For improved large-scale processing compatibility and enhanced device stability, an inverted geometry has been employed for devices such as organic light emitting diodes and organic photovoltaic cells. These improvements are attributed to the added flexibility to incorporate more air-stable materials into the inverted device geometry. However, early work on organic electronic devices with an inverted geometry typically showed reduced device performance compared to devices with a conventional structure. In the case of organic light emitting diodes, inverted devices typically show high operating voltages due to insufficient carrier injection. Here, a method for enhancing hole injection in inverted organic electronic devices is presented. By incorporating an electron accepting interlayer into the inverted device, a substantial enhancement in hole injection efficiency was observed as compared to conventional devices. Through a detailed carrier injection study, it is determined that the injection efficiency enhancements in the inverted devices are due to enhanced charge transfer at the electron acceptor/organic semiconductor interface. A similar situation is observed for organic photovoltaic cells, in which devices with an inverted geometry show limited carrier extraction in early studies. In this work, enhanced carrier extraction is demonstrated for inverted polymer solar cells using a surface-modified ZnO-polymer composite electron-transporting layer. The insulating polymer in the composite layer inhibited aggregation of the ZnO nanoparticles, while the surface-modification of the composite interlayer improved the electronic coupling with the photoactive layer. As a result, inverted polymer solar cells with power conversion efficiencies of over 8

Dechlorination of disinfection by-product monochloroacetic acid in drinking water by nanoscale palladized iron bimetallic particle.

PubMed

Chen, Chao; Wang, Xiangyu; Chang, Ying; Liu, Huiling

2008-01-01

Nanoscale palladized iron (Pd/Fe) bimetallic particles were prepared by reductive deposition method. The particles were characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscope (SEM), transmission electron microscope (TEM), and Brunauer-Emmett-Teller-nitrogen (BET-N2) method. Data obtained from those methods indicated that nanoscale Pd/Fe bimetallic particles contained alpha-Fe0. Detected Pd to Fe ratio by weight (Pd/Fe ratio) was close to theoretical value. Spherical granules with diameter of 47 +/- 11.5 nm connected with one another to form chains and the chains composed nanoscale Pd/Fe bimetallic particles. Specific surface area of particles was 51 m2/g. The factors, such as species of reductants, Pd/Fe ratio, dose of nanoscale Pd/Fe bimetallic particles added into solutions, solution initial pH, and a variety of solvents were studied. Dechlorination effect of monochloroacetic acid by different reductants followed the trend: nanoscale Pd/Fe bimetallic particles of 0.182% Pd/Fe > nanoscale Fe > reductive Fe. When the Pd/Fe ratio was lower than 0.083%, increasing Pd/Fe ratio would increase dechlorination efficiency (DE) of MCAA. When the Pd/Fe ratio was higher than 0.083%, increasing Pd/Fe ratio caused a decrease in DE. Adding more nanoscale Pd/Fe bimetallic particles to solution would enhance DE. The DE of MCAA decreased as initial pH of solution increased.

Novel optoelectronic methodology for testing of MOEMS

NASA Astrophysics Data System (ADS)

Pryputniewicz, Ryszard J.; Furlong, Cosme

2003-01-01

Continued demands for delivery of high performance micro-optoelectromechanical systems (MOEMS) place unprecedented requirements on methods used in their development and operation. Metrology is a major and inseparable part of these methods. Optoelectronic methodology is an essential field of metrology. Due to its scalability, optoelectronic methodology is particularly suitable for testing of MOEMS where measurements must be made with ever increasing accuracy and precision. This was particularly evident during the last few years, characterized by miniaturization of devices, when requirements for measurements have rapidly increased as the emerging technologies introduced new products, especially, optical MEMS. In this paper, a novel optoelectronic methodology for testing of MOEMS is described and its applications are illustrated with representative examples. These examples demonstrate capability to measure submicron deformations of various components of the micromirror device, under operating conditions, and show viability of the optoelectronic methodology for testing of MOEMS.

Method for measuring the alternating current half-wave voltage of a Mach-Zehnder modulator based on opto-electronic oscillation.

PubMed

Hong, Jun; Chen, Dongchu; Peng, Zhiqiang; Li, Zulin; Liu, Haibo; Guo, Jian

2018-05-01

A new method for measuring the alternating current (AC) half-wave voltage of a Mach-Zehnder modulator is proposed and verified by experiment in this paper. Based on the opto-electronic self-oscillation technology, the physical relationship between the saturation output power of the oscillating signal and the AC half-wave voltage is revealed, and the value of the AC half-wave voltage is solved by measuring the saturation output power of the oscillating signal. The experimental results show that the measured data of this new method involved are in agreement with a traditional method, and not only an external microwave signal source but also the calibration for different frequency measurements is not needed in our new method. The measuring process is simplified with this new method on the premise of ensuring the accuracy of measurement, and it owns good practical value.

Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations

NASA Astrophysics Data System (ADS)

Hong, Xia

2016-03-01

Combining the nonvolatile, locally switchable polarization field of a ferroelectric thin film with a nanoscale electronic material in a field effect transistor structure offers the opportunity to examine and control a rich variety of mesoscopic phenomena and interface coupling. It is also possible to introduce new phases and functionalities into these hybrid systems through rational design. This paper reviews two rapidly progressing branches in the field of ferroelectric transistors, which employ two distinct classes of nanoscale electronic materials as the conducting channel, the two-dimensional (2D) electron gas graphene and the strongly correlated transition metal oxide thin films. The topics covered include the basic device physics, novel phenomena emerging in the hybrid systems, critical mechanisms that control the magnitude and stability of the field effect modulation and the mobility of the channel material, potential device applications, and the performance limitations of these devices due to the complex interface interactions and challenges in achieving controlled materials properties. Possible future directions for this field are also outlined, including local ferroelectric gate control via nanoscale domain patterning and incorporating other emergent materials in this device concept, such as the simple binary ferroelectrics, layered 2D transition metal dichalcogenides, and the 4d and 5d heavy metal compounds with strong spin-orbit coupling.

Deterministic growth of AgTCNQ and CuTCNQ nanowires on large-area reduced graphene oxide films for flexible optoelectronics.

PubMed

Zhang, Shuai; Lu, Zhufeng; Gu, Li; Cai, Liling; Cao, Xuebo

2013-11-22

We describe a synchronous reduction and assembly procedure to directly produce large-area reduced graphene oxide (rGO) films sandwiched by a high density of metal nanoparticles (silver and copper). Further, by using the sandwiched metal NPs as sources, networks consisting of AgTCNQ and CuTCNQ nanowires were deterministically grown from the rGO films, forming structurally and functionally integrated rGO/metal-TCNQ hybrid films with outstanding flexibility, bending endurance, and electrical stability. Interestingly, due to the p-type nature of the rGO film and the n-type nature of the metal-TCNQ NWs, the hybrid films are essentially thin-film p-n junctions which are useful in ubiquitous electronics and optoelectronics. Measurements of the optoelectronic properties demonstrate that the rGO/metal-TCNQ hybrid films exhibit substantial photoconductivity and highly reproducible photoswitching behaviours. The present approach may open the door to the versatile and deterministic integration of functional nanostructures into flexible conducting substrates and provide an important step towards producing low-cost and high-performance soft electronic and optoelectronic devices.

Multiscale modeling of nanostructured ZnO based devices for optoelectronic applications: Dynamically-coupled structural fields, charge, and thermal transport processes

NASA Astrophysics Data System (ADS)

Abdullah, Abdulmuin; Alqahtani, Saad; Nishat, Md Rezaul Karim; Ahmed, Shaikh; SIU Nanoelectronics Research Group Team

Recently, hybrid ZnO nanostructures (such as ZnO deposited on ZnO-alloys, Si, GaN, polymer, conducting oxides, and organic compounds) have attracted much attention for their possible applications in optoelectronic devices (such as solar cells, light emitting and laser diodes), as well as in spintronics (such as spin-based memory, and logic). However, efficiency and performance of these hybrid ZnO devices strongly depend on an intricate interplay of complex, nonlinear, highly stochastic and dynamically-coupled structural fields, charge, and thermal transport processes at different length and time scales, which have not yet been fully assessed experimentally. In this work, we study the effects of these coupled processes on the electronic and optical emission properties in nanostructured ZnO devices. The multiscale computational framework employs the atomistic valence force-field molecular mechanics, models for linear and non-linear polarization, the 8-band sp3s* tight-binding models, and coupling to a TCAD toolkit to determine the terminal properties of the device. A series of numerical experiments are performed (by varying different nanoscale parameters such as size, geometry, crystal cut, composition, and electrostatics) that mainly aim to improve the efficiency of these devices. Supported by the U.S. National Science Foundation Grant No. 1102192.

Single event test methodology for integrated optoelectronics

NASA Technical Reports Server (NTRS)

Label, Kenneth A.; Cooley, James A.; Stassinopoulos, E. G.; Marshall, Paul; Crabtree, Christina

1993-01-01

A single event upset (SEU), defined as a transient or glitch on the output of a device, and its applicability to integrated optoelectronics are discussed in the context of spacecraft design and the need for more than a bit error rate viewpoint for testing and analysis. A methodology for testing integrated optoelectronic receivers and transmitters for SEUs is presented, focusing on the actual test requirements and system schemes needed for integrated optoelectronic devices. Two main causes of single event effects in the space environment, including protons and galactic cosmic rays, are considered along with ground test facilities for simulating the space environment.

Reversed nanoscale Kirkendall effect in Au–InAs hybrid nanoparticles

DOE PAGES

Liu, Jing; Amit, Yorai; Li, Yuanyuan; ...

2016-10-10

Metal–semiconductor hybrid nanoparticles (NPs) offer interesting synergistic properties, leading to unique behaviors that have already been exploited in photocatalysis, electrical, and optoelectronic applications. A fundamental aspect in the synthesis of metal–semiconductor hybrid NPs is the possible diffusion of the metal species through the semiconductor lattice. The importance of understanding and controlling the co-diffusion of different constituents is demonstrated in the synthesis of various hollow-structured NPs via the Kirkendall effect. Here, we used a postsynthesis room-temperature reaction between AuCl 3 and InAs nanocrystals (NCs) to form metal–semiconductor core–shell hybrid NPs through the “reversed Kirkendall effect”. In the presented system, the diffusionmore » rate of the inward diffusing species (Au) is faster than that of the outward diffusing species (InAs), which results in the formation of a crystalline metallic Au core surrounded by an amorphous, oxidized InAs shell containing nanoscale voids. We used time-resolved X-ray absorption fine-structure (XAFS) spectroscopy to monitor the diffusion process and found that both the size of the Au core and the extent of the disorder of the InAs shell depend strongly on the Au-to-NC ratio. We have determined, based on multielement fit analysis, that Au diffuses into the NC via the kick-out mechanism, substituting for In host atoms; this compromises the structural stability of the lattice and triggers the formation of In–O bonds. These bonds were used as markers to follow the diffusion process and indicate the extent of degradation of the NC lattice. Time-resolved X-ray diffraction (XRD) was used to measure the changes in the crystal structures of InAs and the nanoscale Au phases. By combining the results of XAFS, XRD, and electron microscopy, we correlated the changes in the local structure around Au, As, and In atoms and the changes in the overall InAs crystal structure. This correlative

Reversed Nanoscale Kirkendall Effect in Au–InAs Hybrid Nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Jing; Amit, Yorai; Li, Yuanyuan

2016-11-08

Metal–semiconductor hybrid nanoparticles (NPs) offer interesting synergistic properties, leading to unique behaviors that have already been exploited in photocatalysis, electrical, and optoelectronic applications. A fundamental aspect in the synthesis of metal–semiconductor hybrid NPs is the possible diffusion of the metal species through the semiconductor lattice. The importance of understanding and controlling the co-diffusion of different constituents is demonstrated in the synthesis of various hollow-structured NPs via the Kirkendall effect. Here, we used a postsynthesis room-temperature reaction between AuCl 3 and InAs nanocrystals (NCs) to form metal–semiconductor core–shell hybrid NPs through the “reversed Kirkendall effect”. In the presented system, the diffusionmore » rate of the inward diffusing species (Au) is faster than that of the outward diffusing species (InAs), which results in the formation of a crystalline metallic Au core surrounded by an amorphous, oxidized InAs shell containing nanoscale voids. We used time-resolved X-ray absorption fine-structure (XAFS) spectroscopy to monitor the diffusion process and found that both the size of the Au core and the extent of the disorder of the InAs shell depend strongly on the Au-to-NC ratio. We have determined, based on multielement fit analysis, that Au diffuses into the NC via the kick-out mechanism, substituting for In host atoms; this compromises the structural stability of the lattice and triggers the formation of In–O bonds. These bonds were used as markers to follow the diffusion process and indicate the extent of degradation of the NC lattice. Time-resolved X-ray diffraction (XRD) was used to measure the changes in the crystal structures of InAs and the nanoscale Au phases. By combining the results of XAFS, XRD, and electron microscopy, we correlated the changes in the local structure around Au, As, and In atoms and the changes in the overall InAs crystal structure. This correlative

Reverse micelle synthesis of nanoscale metal containing catalysts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darab, J.G.; Fulton, J.L.; Linehan, J.C.

1993-03-01

The need for morphological control during the synthesis of catalyst precursor powders is generally accepted to be important. In the liquefaction of coal, for example, iron-bearing catalyst precursor particles containing individual crystallites with diameters in the 1-100 nanometer range are believed to achieve good dispersion through out the coal-solvent slurry during liquefaction 2 runs and to undergo chemical transformations to catalytically active iron sulfide phases. The production of the nanoscale powders described here employs the confining spherical microdomains comprising the aqueous phase of a modified reverse micelle (MRM) microemulsion system as nanoscale reaction vessels in which polymerization, electrochemical reduction andmore » precipitation of solvated salts can occur. The goal is to take advantage of the confining nature of micelles to kinetically hinder transformation processes which readily occur in bulk aqueous solution in order to control the morphology and phase of the resulting powder. We have prepared a variety of metal, alloy, and metal- and mixed metal-oxide nanoscale powders from appropriate MRM systems. Examples of nanoscale powders produced include Co, Mo-Co, Ni{sub 3}Fe, Ni, and various oxides and oxyhydroxides of iron. Here, we discuss the preparation and characterization of nickel metal (with a nickel oxide surface layer) and iron oxyhydroxide MRM nanoscale powders. We have used extended x-ray absorption fine structure (EXAFS) spectroscopy to study the chemical polymerization process in situ, x-ray diffraction (XRD), scanning and transmission electron microcroscopies (SEM and TEM), elemental analysis and structural modelling to characterize the nanoscale powders produced. The catalytic activity of these powders is currently being studied.« less

Optoelectronics technologies for Virtual Reality systems

NASA Astrophysics Data System (ADS)

Piszczek, Marek; Maciejewski, Marcin; Pomianek, Mateusz; Szustakowski, Mieczysław

2017-08-01

Solutions in the field of virtual reality are very strongly associated with optoelectronic technologies. This applies to both process design and operation of VR applications. Technologies such as 360 cameras and 3D scanners significantly improve the design work. What is more, HMD displays with high field of view or optoelectronic Motion Capture systems and 3D cameras guarantee an extraordinary experience in immersive VR applications. This article reviews selected technologies from the perspective of their use in a broadly defined process of creating and implementing solutions for virtual reality. There is also the ability to create, modify and adapt new approaches that show team own work (SteamVR tracker). Most of the introduced examples are effectively used by authors to create different VR applications. The use of optoelectronic technology in virtual reality is presented in terms of design and operation of the system as well as referring to specific applications. Designers and users of VR systems should take a close look on new optoelectronics solutions, as they can significantly contribute to increased work efficiency and offer completely new opportunities for virtual world reception.

A whole-process progressive training mode to foster optoelectronic students' innovative practical ability

NASA Astrophysics Data System (ADS)

Zhong, Hairong; Xu, Wei; Hu, Haojun; Duan, Chengfang

2017-08-01

This article analyzes the features of fostering optoelectronic students' innovative practical ability based on the knowledge structure of optoelectronic disciplines, which not only reveals the common law of cultivating students' innovative practical ability, but also considers the characteristics of the major: (1) The basic theory is difficult, and the close combination of science and technology is obvious; (2)With the integration of optics, mechanics, electronics and computer, the system technology is comprehensive; (3) It has both leading-edge theory and practical applications, so the benefit of cultivating optoelectronic students is high ; (4) The equipment is precise and the practice is costly. Considering the concept and structural characteristics of innovative and practical ability, and adhering to the idea of running practice through the whole process, we put forward the construction of three-dimensional innovation and practice platform which consists of "Synthetically Teaching Laboratory + Innovation Practice Base + Scientific Research Laboratory + Major Practice Base + Joint Teaching and Training Base", and meanwhile build a whole-process progressive training mode to foster optoelectronic students' innovative practical ability, following the process of "basic experimental skills training - professional experimental skills training - system design - innovative practice - scientific research project training - expanded training - graduation project": (1) To create an in - class practical ability cultivation environment that has distinctive characteristics of the major, with the teaching laboratory as the basic platform; (2) To create an extra-curricular innovation practice activities cultivation environment that is closely linked to the practical application, with the innovation practice base as a platform for improvement; (3) To create an innovation practice training cultivation environment that leads the development of cutting-edge, with the scientific

Bottom-up nanoconstruction by the welding of individual metallic nanoobjects using nanoscale solder.

PubMed

Peng, Yong; Cullis, Tony; Inkson, Beverley

2009-01-01

We report that individual metallic nanowires and nanoobjects can be assembled and welded together into complex nanostructures and conductive circuits by a new nanoscale electrical welding technique using nanovolumes of metal solder. At the weld sites, nanoscale volumes of a chosen metal are deposited using a sacrificial nanowire, which ensures that the nanoobjects to be bonded retain their structural integrity. We demonstrate by welding both similar and dissimilar materials that the use of nanoscale solder is clean, controllable, and reliable and ensures both mechanically strong and electrically conductive contacts. Nanoscale weld resistances of just 20Omega are achieved by using Sn solder. Precise engineering of nanowelds by this technique, including the chemical flexibility of the nanowire solder, and high spatial resolution of the nanowelding method, should result in research applications including fabrication of nanosensors and nanoelectronics constructed from a small number of nanoobjects, and repair of interconnects and failed nanoscale electronics.

Counter anion effect on structural, opto-electronic and charge transport properties of fused π-conjugated imidazolium compound

NASA Astrophysics Data System (ADS)

Vinodha, M.; Senthilkumar, K.

2018-05-01

The structure-activity relationship of fused π-conjugated imidazolium cation with three counter anion molecules, BF4-, CF3SO3- and (CF3SO2)2N-, was studied using electronic structure calculations. The structural, opto-electronic and charge transport properties of these complexes were studied. The charge transfer from π-conjugated imidazolium(I) to counter anion was confirmed in all the studied complexes. Interaction energy varies significantly depending on the counter anion and the stability was found higher for I-BF4 complex than both I-CF3SO3 and I-(CF3SO2)2N complexes. The strong (C-H)+...F- hydrogen bond of length 1.95 Å between fused π-conjugated imidazolium and BF-4 anion is the driving force for the strongest interaction energy in I-BF4 complex. The energy decomposition analysis confirms that the interaction between imidazolium and counter anion is mainly driven by electrostatic and orbital interaction. It has been observed that the absorption spectra of the complex are independent of anion nature but the influence of anion character is observed on frontier molecular orbital pattern. The charge transport property of I-BF4 complex was studied by using tight-binding Hamiltonian approach and found that the hole mobility in I-BF4 is 1.13 × 10-4 cm2 V-1 s-1.

Device-packaging method and apparatus for optoelectronic circuits

DOEpatents

Zortman, William A.; Henry, Michael David; Jarecki, Jr., Robert L.

2017-04-25

An optoelectronic device package and a method for its fabrication are provided. The device package includes a lid die and an active die that is sealed or sealable to the lid die and in which one or more optical waveguides are integrally defined. The active die includes one or more active device regions, i.e. integral optoelectronic devices or etched cavities for placement of discrete optoelectronic devices. Optical waveguides terminate at active device regions so that they can be coupled to them. Slots are defined in peripheral parts of the active dies. At least some of the slots are aligned with the ends of integral optical waveguides so that optical fibers or optoelectronic devices inserted in the slots can optically couple to the waveguides.

DNA-based construction at the nanoscale: emerging trends and applications

NASA Astrophysics Data System (ADS)

Lourdu Xavier, P.; Chandrasekaran, Arun Richard

2018-02-01

The field of structural DNA nanotechnology has evolved remarkably—from the creation of artificial immobile junctions to the recent DNA-protein hybrid nanoscale shapes—in a span of about 35 years. It is now possible to create complex DNA-based nanoscale shapes and large hierarchical assemblies with greater stability and predictability, thanks to the development of computational tools and advances in experimental techniques. Although it started with the original goal of DNA-assisted structure determination of difficult-to-crystallize molecules, DNA nanotechnology has found its applications in a myriad of fields. In this review, we cover some of the basic and emerging assembly principles: hybridization, base stacking/shape complementarity, and protein-mediated formation of nanoscale structures. We also review various applications of DNA nanostructures, with special emphasis on some of the biophysical applications that have been reported in recent years. In the outlook, we discuss further improvements in the assembly of such structures, and explore possible future applications involving super-resolved fluorescence, single-particle cryo-electron (cryo-EM) and x-ray free electron laser (XFEL) nanoscopic imaging techniques, and in creating new synergistic designer materials.

DNA-based construction at the nanoscale: emerging trends and applications.

PubMed

Xavier, P Lourdu; Chandrasekaran, Arun Richard

2018-02-09

The field of structural DNA nanotechnology has evolved remarkably-from the creation of artificial immobile junctions to the recent DNA-protein hybrid nanoscale shapes-in a span of about 35 years. It is now possible to create complex DNA-based nanoscale shapes and large hierarchical assemblies with greater stability and predictability, thanks to the development of computational tools and advances in experimental techniques. Although it started with the original goal of DNA-assisted structure determination of difficult-to-crystallize molecules, DNA nanotechnology has found its applications in a myriad of fields. In this review, we cover some of the basic and emerging assembly principles: hybridization, base stacking/shape complementarity, and protein-mediated formation of nanoscale structures. We also review various applications of DNA nanostructures, with special emphasis on some of the biophysical applications that have been reported in recent years. In the outlook, we discuss further improvements in the assembly of such structures, and explore possible future applications involving super-resolved fluorescence, single-particle cryo-electron (cryo-EM) and x-ray free electron laser (XFEL) nanoscopic imaging techniques, and in creating new synergistic designer materials.

Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenide van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Zhao, Yipeng; Yu, Wangbing; Ouyang, Gang

2018-01-01

2D transition metal dichalcogenide (TMDC)-based heterostructures exhibit several fascinating properties that can address the emerging market of energy conversion and storage devices. Current achievements show that the vertical stacked TMDC heterostructures can form type II band alignment and possess significant optoelectronic properties. However, a detailed analytical understanding of how to quantify the band alignment and band offset as well as the optimized power conversion efficiency (PCE) is still lacking. Herein, we propose an analytical model to exhibit the PCEs of TMDC van der Waals (vdW) heterostructures and explore the intrinsic mechanism of photovoltaic conversion based on the detailed balance principle and atomic-bond-relaxation correlation mechanism. We find that the PCE of monolayer MoS2/WSe2 can be up to 1.70%, and that of the MoS2/WSe2 vdW heterostructures increases with thickness, owing to increasing optical absorption. Moreover, the results are validated by comparing them with the available evidence, providing realistic efficiency targets and design principles. Highlights • Both electronic and optoelectronic models are developed for vertical stacked MoS2/WSe2 heterostructures. • The underlying mechanism on size effect of electronic and optoelectronic properties for vertical stacked MoS2/WSe2 heterostructures is clarified. • The macroscopically measurable quantities and the microscopical bond identities are connected.

Symmetric Gain Optoelectronic Mixers for LADAR

DTIC Science & Technology

2008-12-01

photodetector in the receiver is used as an optoelectronic mixer (OEM). Adding gain to the optoelectronic mixer allows the following transimpedance ...output is the low frequency difference signal, several orders of magnitude lower than the LO signal. Therefore, the gain of the transimpedance ... amplifier (TZA) following the photodetector can be increased, improving LADAR range. The metal-semiconductor- metal (MSM) Schottky detector is such a

Optoelectronics components and technology for optical networking in China: recent progress and future trends

NASA Astrophysics Data System (ADS)

Jiang, Shan; Liu, Shuihua

2004-04-01

Current optical communication systems are more and more relying on the advanced opto-electronic components. A series of revolutionary optical and optoelectronics components technology accounts for the fast progress and field deployment of high-capacity telecommunication and data-transmission systems. Since 1990s, the optical communication industry in China entered a high-speed development period and its wide deployment had already established the solid base for China information infrastructure. In this presentation, the main progress of optoelectronics components and technology in China are reviewed, which includes semiconductor laser diode/photo receiver, fiber optical amplifier, DWDM multiplexer/de-multiplexer, dispersion compensation components and all optical network node components, such as optical switch, OADM, tunable optical filters and variable optical attenuators, etc. Integration discrete components into monolithic/hybrid platform component is an inevitable choice for the consideration of performance, mass production and cost reduction. The current status and the future trends of OEIC and PIC components technology in China will also be discuss mainly on the monolithic integration DFB LD + EA modulator, and planar light-wave circuit (PLC) technology, etc.

SPEKTROP DPU: optoelectronic platform for fast multispectral imaging

NASA Astrophysics Data System (ADS)

Graczyk, Rafal; Sitek, Piotr; Stolarski, Marcin

2010-09-01

In recent years it easy to spot and increasing need of high-quality Earth imaging in airborne and space applications. This is due fact that government and local authorities urge for up to date topological data for administrative purposes. On the other hand, interest in environmental sciences, push for ecological approach, efficient agriculture and forests management are also heavily supported by Earth images in various resolutions and spectral ranges. "SPEKTROP DPU: Opto-electronic platform for fast multi-spectral imaging" paper describes architectural datails of data processing unit, part of universal and modular platform that provides high quality imaging functionality in aerospace applications.

Reverse micelle synthesis of nanoscale metal containing catalysts. [Nickel metal (with a nickel oxide surface layer) and iron oxyhydroxide nanoscale powders

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darab, J.G.; Fulton, J.L.; Linehan, J.C.

1993-03-01

The need for morphological control during the synthesis of catalyst precursor powders is generally accepted to be important. In the liquefaction of coal, for example, iron-bearing catalyst precursor particles containing individual crystallites with diameters in the 1-100 nanometer range are believed to achieve good dispersion through out the coal-solvent slurry during liquefaction 2 runs and to undergo chemical transformations to catalytically active iron sulfide phases. The production of the nanoscale powders described here employs the confining spherical microdomains comprising the aqueous phase of a modified reverse micelle (MRM) microemulsion system as nanoscale reaction vessels in which polymerization, electrochemical reduction andmore » precipitation of solvated salts can occur. The goal is to take advantage of the confining nature of micelles to kinetically hinder transformation processes which readily occur in bulk aqueous solution in order to control the morphology and phase of the resulting powder. We have prepared a variety of metal, alloy, and metal- and mixed metal-oxide nanoscale powders from appropriate MRM systems. Examples of nanoscale powders produced include Co, Mo-Co, Ni[sub 3]Fe, Ni, and various oxides and oxyhydroxides of iron. Here, we discuss the preparation and characterization of nickel metal (with a nickel oxide surface layer) and iron oxyhydroxide MRM nanoscale powders. We have used extended x-ray absorption fine structure (EXAFS) spectroscopy to study the chemical polymerization process in situ, x-ray diffraction (XRD), scanning and transmission electron microcroscopies (SEM and TEM), elemental analysis and structural modelling to characterize the nanoscale powders produced. The catalytic activity of these powders is currently being studied.« less

Photonics and optoelectronics of two-dimensional materials beyond graphene.

PubMed

Ponraj, Joice Sophia; Xu, Zai-Quan; Dhanabalan, Sathish Chander; Mu, Haoran; Wang, Yusheng; Yuan, Jian; Li, Pengfei; Thakur, Siddharatha; Ashrafi, Mursal; Mccoubrey, Kenneth; Zhang, Yupeng; Li, Shaojuan; Zhang, Han; Bao, Qiaoliang

2016-11-18

Apart from conventional materials, the study of two-dimensional (2D) materials has emerged as a significant field of study for a variety of applications. Graphene-like 2D materials are important elements of potential optoelectronics applications due to their exceptional electronic and optical properties. The processing of these materials towards the realization of devices has been one of the main motivations for the recent development of photonics and optoelectronics. The recent progress in photonic devices based on graphene-like 2D materials, especially topological insulators (TIs) and transition metal dichalcogenides (TMDs) with the methodology level discussions from the viewpoint of state-of-the-art designs in device geometry and materials are detailed in this review. We have started the article with an overview of the electronic properties and continued by highlighting their linear and nonlinear optical properties. The production of TIs and TMDs by different methods is detailed. The following main applications focused towards device fabrication are elaborated: (1) photodetectors, (2) photovoltaic devices, (3) light-emitting devices, (4) flexible devices and (5) laser applications. The possibility of employing these 2D materials in different fields is also suggested based on their properties in the prospective part. This review will not only greatly complement the detailed knowledge of the device physics of these materials, but also provide contemporary perception for the researchers who wish to consider these materials for various applications by following the path of graphene.

Photonics and optoelectronics of two-dimensional materials beyond graphene

NASA Astrophysics Data System (ADS)

Ponraj, Joice Sophia; Xu, Zai-Quan; Chander Dhanabalan, Sathish; Mu, Haoran; Wang, Yusheng; Yuan, Jian; Li, Pengfei; Thakur, Siddharatha; Ashrafi, Mursal; Mccoubrey, Kenneth; Zhang, Yupeng; Li, Shaojuan; Zhang, Han; Bao, Qiaoliang

2016-11-01

Apart from conventional materials, the study of two-dimensional (2D) materials has emerged as a significant field of study for a variety of applications. Graphene-like 2D materials are important elements of potential optoelectronics applications due to their exceptional electronic and optical properties. The processing of these materials towards the realization of devices has been one of the main motivations for the recent development of photonics and optoelectronics. The recent progress in photonic devices based on graphene-like 2D materials, especially topological insulators (TIs) and transition metal dichalcogenides (TMDs) with the methodology level discussions from the viewpoint of state-of-the-art designs in device geometry and materials are detailed in this review. We have started the article with an overview of the electronic properties and continued by highlighting their linear and nonlinear optical properties. The production of TIs and TMDs by different methods is detailed. The following main applications focused towards device fabrication are elaborated: (1) photodetectors, (2) photovoltaic devices, (3) light-emitting devices, (4) flexible devices and (5) laser applications. The possibility of employing these 2D materials in different fields is also suggested based on their properties in the prospective part. This review will not only greatly complement the detailed knowledge of the device physics of these materials, but also provide contemporary perception for the researchers who wish to consider these materials for various applications by following the path of graphene.

Towards lead-free perovskite photovoltaics and optoelectronics by ab-initio simulations.

PubMed

Roknuzzaman, Md; Ostrikov, Kostya Ken; Wang, Hongxia; Du, Aijun; Tesfamichael, Tuquabo

2017-10-25

Lead (Pb) free non-toxic perovskite solar cells have become more important in the commercialization of the photovoltaic devices. In this study the structural, electronic, optical and mechanical properties of Pb-free inorganic metal halide cubic perovskites CsBX 3 (B = Sn, Ge; X = I, Br, Cl) for perovskite solar cells are simulated using first-principles Density Functional Theory (DFT). These compounds are semiconductors with direct band gap energy and mechanically stable. Results suggest that the materials have high absorption coefficient, low reflectivity and high optical conductivity with potential application in solar cells and other optoelectronic energy devices. On the basis of the optical properties, one can expect that the Germanium (Ge) would be a better replacement of Pb as Ge containing compounds have higher optical absorption and optical conductivity than that of Pb containing compounds. A combinational analysis of the electronic, optical and mechanical properties of the compounds suggests that CsGeI 3 based perovskite is the best Pb-free inorganic metal halide semiconductor for the solar cell application. However, the compound with solid solution of CsGe(I 0.7 Br 0.3 ) 3 is found to be mechanically more ductile than CsGeI 3 . This study will also guide to obtain Pb-free organic perovskites for optoelectronic devices.

Spatial Manipulation of Heat Flow by Surface Boundaries at the Nanoscale

NASA Astrophysics Data System (ADS)

Malhotra, Abhinav; Maldovan, Martin

The precise manipulation of phonon transport properties is central to controlling thermal transport in semiconductor nanostructures. The physical understanding, prediction, and control of thermal phonon heat spectra and thermal conductivity accumulation functions - which establish the proportion of heat transported by phonons with different frequencies and mean-free-paths - has attracted significant attention in recent years. In this talk, we advance the possibilities of manipulating heat by spatially modulating thermal transport in nanostructures. We show that phonon scattering at interfaces impacts the most preferred physical pathway used by heat energy flow in thermal transport in nanostructures. The role of introducing boundaries with different surface conditions on resultant thermal flux is presented and methodologies to enhance these spatial modulations are discussed. This talk aims to advance the fundamental understanding on the nature of heat transport at nanoscale with potential applications in multiple research areas ranging from energy materials to optoelectronics.

Box 6: Nanoscale Defects

NASA Astrophysics Data System (ADS)

Alves, Eduardo; Breese, Mark

Defects affect virtually all properties of crystalline materials, and their role is magnified in nanoscale structures. In this box we describe the different type of defects with particular emphasis on point and linear defects. Above zero Kelvin all real materials have a defect population within their structure, which affects either their crystalline, electronic or optical properties. It is common to attribute a negative connotation to the presence of defects. However, a perfect silicon crystal or any other defect-free semiconductor would have a limited functionality and might even be useless.

Characterizing nanoscale scanning probes using electron microscopy: A novel fixture and a practical guide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jacobs, Tevis D. B., E-mail: tjacobs@pitt.edu; Wabiszewski, Graham E.; Goodman, Alexander J.

2016-01-15

The nanoscale geometry of probe tips used for atomic force microscopy (AFM) measurements determines the lateral resolution, contributes to the strength of the tip-surface interaction, and can be a significant source of uncertainty in the quantitative analysis of results. While inverse imaging of the probe tip has been used successfully to determine probe tip geometry, direct observation of the tip profile using electron microscopy (EM) confers several advantages: it provides direct (rather than indirect) imaging, requires fewer algorithmic parameters, and does not require bringing the tip into contact with a sample. In the past, EM-based observation of the probe tipmore » has been achieved using ad hoc mounting methods that are constrained by low throughput, the risk of contamination, and repeatability issues. We report on a probe fixture designed for use in a commercial transmission electron microscope that enables repeatable mounting of multiple AFM probes as well as a reference grid for beam alignment. This communication describes the design, fabrication, and advantages of this probe fixture, including full technical drawings for machining. Further, best practices are discussed for repeatable, non-destructive probe imaging. Finally, examples of the fixture’s use are described, including characterization of common commercial AFM probes in their out-of-the-box condition.« less

Characterizing nanoscale scanning probes using electron microscopy: A novel fixture and a practical guide

NASA Astrophysics Data System (ADS)

Jacobs, Tevis D. B.; Wabiszewski, Graham E.; Goodman, Alexander J.; Carpick, Robert W.

2016-01-01

The nanoscale geometry of probe tips used for atomic force microscopy (AFM) measurements determines the lateral resolution, contributes to the strength of the tip-surface interaction, and can be a significant source of uncertainty in the quantitative analysis of results. While inverse imaging of the probe tip has been used successfully to determine probe tip geometry, direct observation of the tip profile using electron microscopy (EM) confers several advantages: it provides direct (rather than indirect) imaging, requires fewer algorithmic parameters, and does not require bringing the tip into contact with a sample. In the past, EM-based observation of the probe tip has been achieved using ad hoc mounting methods that are constrained by low throughput, the risk of contamination, and repeatability issues. We report on a probe fixture designed for use in a commercial transmission electron microscope that enables repeatable mounting of multiple AFM probes as well as a reference grid for beam alignment. This communication describes the design, fabrication, and advantages of this probe fixture, including full technical drawings for machining. Further, best practices are discussed for repeatable, non-destructive probe imaging. Finally, examples of the fixture's use are described, including characterization of common commercial AFM probes in their out-of-the-box condition.

Thermoelectric efficiency of nanoscale devices in the linear regime

NASA Astrophysics Data System (ADS)

Bevilacqua, G.; Grosso, G.; Menichetti, G.; Pastori Parravicini, G.

2016-12-01

We study quantum transport through two-terminal nanoscale devices in contact with two particle reservoirs at different temperatures and chemical potentials. We discuss the general expressions controlling the electric charge current, heat currents, and the efficiency of energy transmutation in steady conditions in the linear regime. With focus in the parameter domain where the electron system acts as a power generator, we elaborate workable expressions for optimal efficiency and thermoelectric parameters of nanoscale devices. The general concepts are set at work in the paradigmatic cases of Lorentzian resonances and antiresonances, and the encompassing Fano transmission function: the treatments are fully analytic, in terms of the trigamma functions and Bernoulli numbers. From the general curves here reported describing transport through the above model transmission functions, useful guidelines for optimal efficiency and thermopower can be inferred for engineering nanoscale devices in energy regions where they show similar transmission functions.

Single-sided lateral-field and phototransistor-based optoelectronic tweezers

NASA Technical Reports Server (NTRS)

Ohta, Aaron (Inventor); Chiou, Pei-Yu (Inventor); Hsu, Hsan-Yin (Inventor); Jamshidi, Arash (Inventor); Wu, Ming-Chiang (Inventor); Neale, Steven L. (Inventor)

2011-01-01

Described herein are single-sided lateral-field optoelectronic tweezers (LOET) devices which use photosensitive electrode arrays to create optically-induced dielectrophoretic forces in an electric field that is parallel to the plane of the device. In addition, phototransistor-based optoelectronic tweezers (PhOET) devices are described that allow for optoelectronic tweezers (OET) operation in high-conductivity physiological buffer and cell culture media.

Asynchronous transfer mode distribution network by use of an optoelectronic VLSI switching chip.

PubMed

Lentine, A L; Reiley, D J; Novotny, R A; Morrison, R L; Sasian, J M; Beckman, M G; Buchholz, D B; Hinterlong, S J; Cloonan, T J; Richards, G W; McCormick, F B

1997-03-10

We describe a new optoelectronic switching system demonstration that implements part of the distribution fabric for a large asynchronous transfer mode (ATM) switch. The system uses a single optoelectronic VLSI modulator-based switching chip with more than 4000 optical input-outputs. The optical system images the input fibers from a two-dimensional fiber bundle onto this chip. A new optomechanical design allows the system to be mounted in a standard electronic equipment frame. A large section of the switch was operated as a 208-Mbits/s time-multiplexed space switch, which can serve as part of an ATM switch by use of an appropriate out-of-band controller. A larger section with 896 input light beams and 256 output beams was operated at 160 Mbits/s as a slowly reconfigurable space switch.

Low-Temperature Scanning Capacitance Probe for Imaging Electron Motion

NASA Astrophysics Data System (ADS)

Bhandari, S.; Westervelt, R. M.

2014-12-01

Novel techniques to probe electronic properties at the nanoscale can shed light on the physics of nanoscale devices. In particular, studying the scattering of electrons from edges and apertures at the nanoscale and imaging the electron profile in a quantum dot, have been of interest [1]. In this paper, we present the design and implementation of a cooled scanning capacitance probe that operates at liquid He temperatures to image electron waves in nanodevices. The conducting tip of a scanned probe microscope is held above the nanoscale structure, and an applied sample-to-tip voltage creates an image charge that is measured by a cooled charge amplifier [2] adjacent to the tip. The circuit is based on a low-capacitance, high- electron-mobility transistor (Fujitsu FHX35X). The input is a capacitance bridge formed by a low capacitance pinched-off HEMT transistor and tip-sample capacitance. We have achieved low noise level (0.13 e/VHz) and high spatial resolution (100 nm) for this technique, which promises to be a useful tool to study electronic behavior in nanoscale devices.

Spectroscopic investigation of the chemical and electronic properties of chalcogenide materials for thin-film optoelectronic devices

NASA Astrophysics Data System (ADS)

Horsley, Kimberly Anne

Chalcogen-based materials are at the forefront of technologies for sustainable energy production. This progress has come only from decades of research, and further investigation is needed to continue improvement of these materials. For this dissertation, a number of chalcogenide systems were studied, which have applications in optoelectronic devices, such as LEDs and Photovoltaics. The systems studied include Cu(In,Ga)Se2 (CIGSe) and CuInSe 2 (CISe) thin-film absorbers, CdTe-based photovoltaic structures, and CdTe-ZnO nanocomposite materials. For each project, a sample set was prepared through collaboration with outside institutions, and a suite of spectroscopy techniques was employed to answer specific questions about the system. These techniques enabled the investigation of the chemical and electronic structure of the materials, both at the surface and towards the bulk. CdS/Cu(In,Ga)Se2 thin-films produced from the roll-to-roll, ambient pressure, Nanosolar industrial line were studied. While record-breaking efficiency cells are usually prepared in high-vacuum (HV) or ultra-high vacuum (UHV) environments, these samples demonstrate competitive mass-production efficiency without the high-cost deposition environment. We found relatively low levels of C contaminants, limited Na and Se oxidation, and a S-Se intermixing at the CdS/CIGSe interface. The surface band gap compared closely to previously investigated CIGSe thin-films deposited under vacuum, illustrating that roll-to-roll processing is a promising and less-expensive alternative for solar cell production. An alternative deposition process for CuInSe2 was also studied, in collaboration with the University of Luxembourg. CuInSe2 absorbers were prepared with varying Cu content and surface treatments to investigate the potential to produce an absorber with a Cu-rich bulk and Cu-poor surface. This is desired to combine the bulk characteristics of reduced defects and larger grains in Cu-rich films, while maintaining

Nanoscale investigation of the degradation mechanism of a historical chrome yellow paint by quantitative electron energy loss spectroscopy mapping of chromium species.

PubMed

Tan, Haiyan; Tian, He; Verbeeck, Jo; Monico, Letizia; Janssens, Koen; Van Tendeloo, Gustaaf

2013-10-18

Getting the picture: The investigation of 100 year old chrome yellow paint by transmission electron microscopy and spectroscopy has led to the identification of four types of core-shell particles. This nanoscale investigation has allowed a mechanism to be proposed for the darkening of some bright yellow colors in Van Gogh's paintings (e.g. in Falling leaves (Les Alyscamps), 1888). Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Visualizing nanoscale phase morphology for understanding photovoltaic performance of PTB7: PC71BM solar cell

NASA Astrophysics Data System (ADS)

Supasai, Thidarat; Amornkitbamrung, Vittaya; Thanachayanont, Chanchana; Tang, I.-Ming; Sutthibutpong, Thana; Rujisamphan, Nopporn

2017-11-01

Visualizing and controlling the phase separation of the donor and acceptor domains in organic bulk-hetero-junction (BHJ) solar devices made with poly([4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethyl-hexyl)carbon-yl]thieno[3,4-bthiophenediyl]) (PTB7) and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) are needed to achieve high power conversion efficiency (PCE). Traditional bright-field (BF) imaging, especially of polymeric materials, produces images of poor contrast when done at the nanoscale level. Clear nanoscale morphologies of the PTB7:PC71BM blends prepared with different 1,8-diiodooctane (DIO) concentrations were seen when using the energy-filtered transmission electron microscopy (EFTEM). The electron energy loss (EELS) spectra of the pure PTB7 and PC71BM samples are centered at 22.7 eV and 24.5 eV, respectively. Using the electrons whose energy losses are in the range of 16-30 eV, detail information of the phase morphology at the nanoscale was obtained. Correlations between the improvement in the photovoltaic performances and the increased electron mobility were seen. These correlations are discussed in terms of the changes (at the nanoscale level) in blending phase morphology when different DIO concentrations are added.

Optoelectronic studies on heterocyclic bases of deoxyribonucleic acid for DNA photonics.

PubMed

El-Diasty, Fouad; Abdel-Wahab, Fathy

2015-10-01

The optoelectronics study of large molecules, particularly π-stacking molecules, such as DNA is really an extremely difficult task. We perform first electronic structure calculations on the heterocyclic bases of 2'-deoxyribonucleic acid based on Lorentz-Fresnel dispersion theory. In the UV-VIS range of spectrum, many of the optoelectronic parameters for DNA four bases namely adenine, guanine, cytosine and thymine are calculated and discussed. The results demonstrate that adenine has the highest hyperpolarizability, whereas thymine has the lowest hyperpolarizability. Cytosine has the lower average oscillator energy and the higher lattice energy. Thymine infers the most stable nucleic base with the lower phonon energy. Thymine also has the highest average oscillator energy and the lower lattice energy. Moreover, the four nucleic acid bases have large band gap energies less than 5 eV with a semiconducting behavior. Guanine shows the smallest band gap and the highest Fermi level energy, whereas adenine elucidates the highest band gap energy. Copyright © 2015. Published by Elsevier B.V.

Many body calculations of the optoelectronic properties of h-AlN: from 3D to 2D

NASA Astrophysics Data System (ADS)

Kecik, Deniz; Bacaksiz, Cihan; Durgun, Engin; Senger, Tugrul

Outstanding electronic and optical properties of graphene, h-BN, MoS2 etc. motivate the further discovery of novel 2D materials such as AlN, a III-V compound, with remarkable features for potential optoelectronic applications, due to its wide indirect band gap. The layer and strain dependent optoelectronic properties of the recently synthesized monolayer hexagonal AlN (h-AlN) were investigated using density functional and many body perturbation theories, where RPA and BSE were employed on top of the QPG0W0 method. The optical spectra of 1-4 layered h-AlN revealed prominent absorption beyond the visible light regime; absorbance within the UV range increasing with the number of layers. In addition, the applied tensile strain (1 - 7 %) was observed to gradually redshift the absorption spectra. While the many body corrections induced significant blueshift to the optical spectra, evidence of bound excitons were also found for the layered structures. Hence, the optoelectronic properties of layered h-AlN can be tuned by modifying their structure and applying strain, moreover are greatly altered when electron-hole interactions are considered. This work was supported by the Scientific and Technological Research Council of Turkey (TUBITAK, Project No. 113T050).

Dopantless Diodes for Efficient Mid/deep UV LEDs and Lasers - Topic 4.2 Optoelectronics

DTIC Science & Technology

2017-09-12

Week, Santa Barbara, CA, “Polarization hole engineering in deep- ultraviolet nanowire LEDs”, ATM Sarwar, Santino Carnevale, Thomas Kent, Brelon May...Electronic Materials Conference, Santa Barbara, California, “ Engineering the polarization hole doping of graded nanowire ultraviolet LEDs integrated on...Nanostructures for Optoelectronic and Magnetic Functionalities: Growth, Characterization and Engineering Publication Type: Thesis or Dissertation

Prototype Focal-Plane-Array Optoelectronic Image Processor

NASA Technical Reports Server (NTRS)

Fang, Wai-Chi; Shaw, Timothy; Yu, Jeffrey

1995-01-01

Prototype very-large-scale integrated (VLSI) planar array of optoelectronic processing elements combines speed of optical input and output with flexibility of reconfiguration (programmability) of electronic processing medium. Basic concept of processor described in "Optical-Input, Optical-Output Morphological Processor" (NPO-18174). Performs binary operations on binary (black and white) images. Each processing element corresponds to one picture element of image and located at that picture element. Includes input-plane photodetector in form of parasitic phototransistor part of processing circuit. Output of each processing circuit used to modulate one picture element in output-plane liquid-crystal display device. Intended to implement morphological processing algorithms that transform image into set of features suitable for high-level processing; e.g., recognition.

Transparent heat-spreader for optoelectronic applications

DOEpatents

Minano, Juan Carlos; Benitez, Pablo

2014-11-04

An optoelectronic cooling system is equally applicable to an LED collimator or a photovoltaic solar concentrator. A transparent fluid conveys heat from the optoelectronic chip to a hollow cover over the system aperture. The cooling system can keep a solar concentrator chip at the same temperature as found for a one-sun flat-plate solar cell. Natural convection or forced circulation can operate to convey heat from the chip to the cover.

Optoelectronic method for detection of cervical intraepithelial neoplasia and cervical cancer

NASA Astrophysics Data System (ADS)

Pruski, D.; Przybylski, M.; Kędzia, W.; Kędzia, H.; Jagielska-Pruska, J.; Spaczyński, M.

2011-12-01

The optoelectronic method is one of the most promising concepts of biophysical program of the diagnostics of CIN and cervical cancer. Objectives of the work are evaluation of sensitivity and specificity of the optoelectronic method in the detection of CIN and cervical cancer. The paper shows correlation between the pNOR number and sensitivity/specificity of the optoelectronic method. The study included 293 patients with abnormal cervical cytology result and the following examinations: examination with the use of the optoelectronic method — Truscreen, colposcopic examination, and histopathologic biopsy. Specificity of the optoelectronic method for LGSIL was estimated at 65.70%, for HGSIL and squamous cell carcinoma of cervix amounted to 90.38%. Specificity of the optoelectronic method used to confirm lack of cervical pathology was estimated at 78.89%. The field under the ROC curve for the optoelectronic method was estimated at 0.88 (95% CI, 0.84-0.92) which shows high diagnostic value of the test in the detection of HGSIL and squamous cell carcinoma. The optoelectronic method is characterised by high usefulness in the detection of CIN, present in the squamous epithelium and squamous cell carcinoma of cervix.

Remote optoelectronic sensors for monitoring of nonlinear surfaces

NASA Astrophysics Data System (ADS)

Petrochenko, Andrew V.; Konyakhin, Igor A.

2015-05-01

Actually during construction of the high building actively are used objects of various nonlinear surface, for example, sinuous (parabolic or hyperbolic) roofs of the sport complexes that require automatic deformation control [1]. This type of deformation has character of deflection that is impossible to monitor objectively with just one optoelectronic sensor (which is fixed on this surface). In this article is described structure of remote optoelectronic sensor, which is part of the optoelectronic monitoring system of nonlinear surface, and mathematical transformation of exterior orientation sensor elements in the coordinates of control points.

Multi-material optoelectronic fiber devices

NASA Astrophysics Data System (ADS)

Sorin, F.; Yan, Wei; Volpi, Marco; Page, Alexis G.; Nguyen Dang, Tung; Qu, Y.

2017-05-01

The recent ability to integrate materials with different optical and optoelectronic properties in prescribed architectures within flexible fibers is enabling novel opportunities for advanced optical probes, functional surfaces and smart textiles. In particular, the thermal drawing process has known a series of breakthroughs in recent years that have expanded the range of materials and architectures that can be engineered within uniform fibers. Of particular interest in this presentation will be optoelectronic fibers that integrate semiconductors electrically addressed by conducting materials. These long, thin and flexible fibers can intercept optical radiation, localize and inform on a beam direction, detect its wavelength and even harness its energy. They hence constitute ideal candidates for applications such as remote and distributed sensing, large-area optical-detection arrays, energy harvesting and storage, innovative health care solutions, and functional fabrics. To improve performance and device complexity, tremendous progresses have been made in terms of the integrated semiconductor architectures, evolving from large fiber solid-core, to sub-hundred nanometer thin-films, nano-filaments and even nanospheres. To bridge the gap between the optoelectronic fiber concept and practical applications however, we still need to improve device performance and integration. In this presentation we will describe the materials and processing approaches to realize optoelectronic fibers, as well as give a few examples of demonstrated systems for imaging as well as light and chemical sensing. We will then discuss paths towards practical applications focusing on two main points: fiber connectivity, and improving the semiconductor microstructure by developing scalable approaches to make fiber-integrated single-crystal nanowire based devices.

Geometric rectification for nanoscale vibrational energy harvesting

NASA Astrophysics Data System (ADS)

Bustos-Marún, Raúl A.

2018-02-01

In this work, we present a mechanism that, based on quantum-mechanical principles, allows one to recover kinetic energy at the nanoscale. Our premise is that very small mechanical excitations, such as those arising from sound waves propagating through a nanoscale system or similar phenomena, can be quite generally converted into useful electrical work by applying the same principles behind conventional adiabatic quantum pumping. The proposal is potentially useful for nanoscale vibrational energy harvesting where it can have several advantages. The most important one is that it avoids the use of classical rectification mechanisms as it is based on what we call geometric rectification. We show that this geometric rectification results from applying appropriate but quite general initial conditions to damped harmonic systems coupled to electronic reservoirs. We analyze an analytically solvable example consisting of a wire suspended over permanent charges where we find the condition for maximizing the pumped charge. We also studied the effects of coupling the system to a capacitor including the effect of current-induced forces and analyzing the steady-state voltage of operation. Finally, we show how quantum effects can be used to boost the performance of the proposed device.

New class of optoelectronic oscillators (OEO) for microwave signal generation and processing

NASA Astrophysics Data System (ADS)

Maleki, Lute; Yao, X. S.

1996-11-01

A new class of oscillators based on photonic devices is presented. These opto-electronic oscillators (OEO's) generate microwave oscillation by converting continuous energy from a light source using a feedback circuit which includes a delay element, an electro-optic switch, and a photodetector. Different configurations of OEO's are presented, each of which may be applied to a particular application requiring ultra-high performance, or low cost and small size.

Observation of conducting filament growth in nanoscale resistive memories

NASA Astrophysics Data System (ADS)

Yang, Yuchao; Gao, Peng; Gaba, Siddharth; Chang, Ting; Pan, Xiaoqing; Lu, Wei

2012-03-01

Nanoscale resistive switching devices, sometimes termed memristors, have recently generated significant interest for memory, logic and neuromorphic applications. Resistive switching effects in dielectric-based devices are normally assumed to be caused by conducting filament formation across the electrodes, but the nature of the filaments and their growth dynamics remain controversial. Here we report direct transmission electron microscopy imaging, and structural and compositional analysis of the nanoscale conducting filaments. Through systematic ex-situ and in-situ transmission electron microscopy studies on devices under different programming conditions, we found that the filament growth can be dominated by cation transport in the dielectric film. Unexpectedly, two different growth modes were observed for the first time in materials with different microstructures. Regardless of the growth direction, the narrowest region of the filament was found to be near the dielectric/inert-electrode interface in these devices, suggesting that this region deserves particular attention for continued device optimization.

EDITORIAL: Nanoscale metrology Nanoscale metrology

NASA Astrophysics Data System (ADS)

Klapetek, P.; Koenders, L.

2011-09-01

properties of nanoparticles, nanotubes, quantum dots and similar fascinating objects. Currently there is a high level of interest in characterization of nanoparticles since they are increasingly encountered in science, technology, life sciences and even everyday life. Quantitative characterization of nanoparticles has been the subject of many discussions and some recent work over the last couple of years, and both scanning probe microscopy and scanning or transmission electron microscopy characterization of nanoparticles are presented here. There is also a continuous need for improvement of scanning probe microscopy that is a basic tool for nanometrology. Increasing thermal stability, scanning speed and tip stability, improving traceability and reducing uncertainty are all areas being addressed. As scanning probe microscopy is essentially based on force measurements in the nano- and piconewton range, we take notice of large developments, both theoretical and experimental, in the field of traceable measurements of nanoscale forces. This will greatly increase the understanding and quantification of many basic phenomena in scanning probe microscopy. Finally, we observe that high resolution techniques for acquiring more than just morphology are slowly shifting from purely qualitative tools to well defined quantitative methods. Lack of simple and reliable chemical identification in scanning probe microscopy is compensated by many other local probing methods seen in commercial microscopes, like scanning thermal microscopy or the Kelvin probe technique. All these methods still require underpinning with theoretical and experimental work before they can become traceable analytical methods; however, the increased interest in the metrology community gives rise to optimism in this field. The production of this issue involved considerable effort from many contributors. We would like to thank all the authors for their contributions, the referees for their time spent reviewing the

Organic polymer-metal nano-composites for opto-electronic sensing of chemicals in agriculture

NASA Astrophysics Data System (ADS)

Sarkisov, Sergey S.; Czarick, Michael; Fairchild, Brian D.; Liang, Yi; Kukhtareva, Tatiana; Curley, Michael J.

2013-03-01

Recent research findings led the team to conclude that a long lasting and inexpensive colorimetric sensor for monitoring ammonia emission from manure in confined animal feeding operations could eventually become feasible. The sensor uses robust method of opto-electronic spectroscopic measurement of the reversible change of the color of a sensitive nano-composite reagent film in response to ammonia. The film is made of a metal (gold, platinum, or palladium) nano-colloid in a polymer matrix with an ammonia-sensitive indicator dye additive. The response of the indicator dye (increase of the optical absorption in the region 550 to 650 nm) is enhanced by the nano-particles (~10 nm in size) in two ways: (a) concentration of the optical field near the nano-particle due to the plasmon resonance; and (b) catalytic acceleration of the chemical reaction of deprotonization of the indicator dye in the presence of ammonia and water vapor. This enhancement helps to make a miniature and rugged sensing element without compromising its sensitivity of less than 1 ppm for the range 0 to 100 ppm. The sensor underwent field tests in commercial broiler farms in Georgia, Alabama, and Arkansas and was compared against a commercial photoacoustic gas analyzer. The sensor output correlated well with the data from the photoacoustic analyzer (correlation coefficient not less than 0.9 and the linear regression slope after calibration close to 1.0) for several weeks of continuous operation. The sources of errors were analyzed and the conclusions on the necessary improvements and the potential use of the proposed device were made.

Electronic-To-Optical-To-Electronic Packet-Data Conversion

NASA Technical Reports Server (NTRS)

Monacos, Steve

1996-01-01

Space-time multiplexer (STM) cell-based communication system designed to take advantage of both high throughput attainable in optical transmission links and flexibility and functionality of electronic processing, storage, and switching. Long packets segmented and transmitted optically by wavelength-division multiplexing. Performs optoelectronic and protocol conversion between electronic "store-and-forward" protocols and optical "hot-potato" protocols.

Six Classes of Diffraction-Based Optoelectronic Instruments

NASA Technical Reports Server (NTRS)

Spremo, Stevan; Fuhr, Peter; Schipper, John

2003-01-01

Six classes of diffraction-based optoelectronic instruments have been invented as means for wavelength-based processing of light. One family of anticipated applications lies in scientific instrumentation for studying chemical and physical reactions that affect and/or are affected differently by light of different wavelengths or different combinations of wavelengths. Another family of anticipated applications lies in optoelectronic communication systems.

Experimental, theoretical, and device application development of nanoscale focused electron-beam-induced deposition

NASA Astrophysics Data System (ADS)

Randolph, Steven Jeffrey

Electron-beam-induced deposition (EBID) is a highly versatile nanofabrication technique that allows for growth of a variety of materials with nanoscale precision and resolution. While several applications and studies of EBID have been reported and published, there is still a significant lack of understanding of the complex mechanisms involved in the process. Consequently, EBID process control is, in general, limited and certain common experimental results regarding nanofiber growth have yet to be fully explained. Such anomalous results have been addressed in this work both experimentally and by computer simulation. Specifically, a correlation between SiOx nanofiber deposition observations and the phenomenon of electron beam heating (EBH) was shown by comparison of thermal computer models and experimental results. Depending on the beam energy, beam current, and nanostructure geometry, the heat generated can be substantial and may influence the deposition rate. Temperature dependent EBID growth experiments qualitatively verified the results of the EBH model. Additionally, EBID was used to produce surface image layers for maskless, direct-write lithography (MDL). A single layer process used directly written SiOx features as a masking layer for amorphous silicon thin films. A bilayer process implemented a secondary masking layer consisting of standard photoresist into which a pattern---directly written by EBID tungsten---was transferred. The single layer process was found to be extremely sensitive to the etch selectivity of the plasma etch. In the bilayer process, EBID tungsten was written onto photoresist and the pattern transferred by means of oxygen plasma dry development following a brief refractory descum. Conditions were developed to reduce the spatial spread of electrons in the photoresist layer and obtain ˜ 35 nm lines. Finally, an EBID-based technique for field emitter repair was applied to the Digital Electrostatically focused e-beam Array Lithography (DEAL

Contrast enhancement of biological nanoporous materials with zinc oxide infiltration for electron and X-ray nanoscale microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ocola, L. E.; Sampathkumar, V.; Kasthuri, N.

Here, we show that using infiltration of ZnO metal oxide can be useful for high resolution imaging of biological samples in electron and X-ray microscopy. This method is compatible with standard fixation techniques that leave the sample dry, such as finishing with super critical CO 2 drying, or simple vacuum drying at 95°C. We demonstrate this technique can be applied on tooth and brain tissue samples. We also show that high resolution X-ray tomography can be performed on biological systems using Zn K edge (1s) absorption to enhance internal structures, and obtained the first nanoscale 10 KeV X-ray absorption imagesmore » of the interior regions of a tooth.« less

Contrast enhancement of biological nanoporous materials with zinc oxide infiltration for electron and X-ray nanoscale microscopy

DOE PAGES

Ocola, L. E.; Sampathkumar, V.; Kasthuri, N.; ...

2017-07-19

Here, we show that using infiltration of ZnO metal oxide can be useful for high resolution imaging of biological samples in electron and X-ray microscopy. This method is compatible with standard fixation techniques that leave the sample dry, such as finishing with super critical CO 2 drying, or simple vacuum drying at 95°C. We demonstrate this technique can be applied on tooth and brain tissue samples. We also show that high resolution X-ray tomography can be performed on biological systems using Zn K edge (1s) absorption to enhance internal structures, and obtained the first nanoscale 10 KeV X-ray absorption imagesmore » of the interior regions of a tooth.« less

The Optoelectronic Properties of Nanoparticles from First Principles Calculations

NASA Astrophysics Data System (ADS)

Brawand, Nicholas Peter

The tunable optoelectronic properties of nanoparticles through the modification of their size, shape, and surface chemistry, make them promising platforms for numerous applications, including electronic and solar conversion devices. However, the rational design and optimization of nanostructured materials remain open challenges, e.g. due to difficulties in controlling and reproducing synthetic processes and in precise atomic-scale characterization. Hence, the need for accurate theoretical predictions, which can complement and help interpret experiments and provide insight into the underlying physical properties of nanostructured materials. This dissertation focuses on the development and application of first principles calculations to predict the optoelectronic properties of nanoparticles. Novel methods based on density functional theory are developed, implemented, and applied to predict both optical and charge transport properties. In particular, the generalization of dielectric dependent hybrid functionals to finite systems is introduced and shown to yield highly accurate electronic structure properties of molecules and nanoparticles, including photoemission and absorption properties. In addition, an implementation of constrained density functional theory is discussed, for the calculation of hopping transport in nanoparticle systems. The implementation was verified against literature results and compared against other methods used to compute transport properties, showing that some methods used in the literature give unphysical results for thermally disordered systems. Furthermore, the constrained density functional theory implementation was coupled to the self-consistent image charge method, making it possible to include image charge effects self-consistently when predicting charge transport properties of nanoparticles near interfaces. The methods developed in this dissertation were then applied to study the optoelectronic and transport properties of specific

Bismuth chalcohalides and oxyhalides as optoelectronic materials

DOE PAGES

Du, Mao -Hua; Shi, Hongliang; Ming, Wenmei

2016-03-29

Several Tl and Pb based halides and chalcohalides have recently been discovered as promising optoelectronic materials [i.e., photovoltaic (PV) and gamma-ray detection materials]. Efficient carrier transport in these materials is attributed partly to the special chemistry of ns 2 ions (e.g., Tl +, Pb 2+, and Bi 3+). However, the toxicity of Tl and Pb is challenging to the development and the wide use of Tl and Pb based materials. In this paper, we investigate materials that contain Bi 3+, which is also an ns 2 ion. By combining Bi halides with Bi chalcogenides or oxides, the resulting ternary compoundsmore » exhibit a wide range of band gaps, offering opportunities in various optoelectronic applications. Density functional calculations of electronic structure, dielectric properties, optical properties, and defect properties are performed on selected Bi 3+ based chalcohalides and oxyhalides, i.e., BiSeBr, BiSI, BiSeI, and BiOBr. We propose different applications for these Bi compounds based on calculated properties, i.e., n-BiSeBr, p-BiSI, and p-BiSeI as PV materials, BiSeBr and BiSI as room-temperature radiation detection materials, and BiOBr as a p-type transparent conducting material. BiSeBr, BiSI, and BiSeBr have chain structures while BiOBr has a layered structure. However, in BiSI, BiSeI, and BiOBr, significant valence-band dispersion is found in the directions perpendicular to the atomic chain or layer because the valence-band edge states are dominated by the halogen states that have strong interchain or interlayer coupling. We find significantly enhanced Born effective charges and anomalously large static dielectric constants of the Bi compounds, which should reduce carrier scattering and trapping and promote efficient carrier transport in these materials. The strong screening and the small anion coordination numbers in Bi chalcohalides should lead to weak potentials for electron localization at anion vacancies. As a result, defect calculations indeed show

Effectively Transparent Front Contacts for Optoelectronic Devices

DOE PAGES

Saive, Rebecca; Borsuk, Aleca M.; Emmer, Hal S.; ...

2016-06-10

Effectively transparent front contacts for optoelectronic devices achieve a measured transparency of up to 99.9% and a measured sheet resistance of 4.8 Ω sq-1. These 3D microscale triangular cross-section grid fingers redirect incoming photons efficiently to the active semiconductor area and can replace standard grid fingers as well as transparent conductive oxide layers in optoelectronic devices. Optoelectronic devices such as light emitting diodes, photodiodes, and solar cells play an important and expanding role in modern technology. Photovoltaics is one of the largest optoelectronic industry sectors and an ever-increasing component of the world's rapidly growing renewable carbon-free electricity generation infrastructure. Inmore » recent years, the photovoltaics field has dramatically expanded owing to the large-scale manufacture of inexpensive crystalline Si and thin film cells and modules. The current record efficiency (η = 25.6%) Si solar cell utilizes a heterostructure intrinsic thin layer (HIT) design[1] to enable increased open circuit voltage, while more mass-manufacturable solar cell architectures feature front contacts.[2, 3] Thus improved solar cell front contact designs are important for future large-scale photovoltaics with even higher efficiency.« less

Optoelectronic lessons as an interdisciplinary lecture

NASA Astrophysics Data System (ADS)

Wu, Dan; Wu, Maocheng; Gu, Jihua

2017-08-01

It is noticed that more and more students in college are passionately curious about the optoelectronic technology, since optoelectronic technology has advanced extremely quickly during the last five years and its applications could be found in a lot of domains. The students who are interested in this area may have different educational backgrounds and their majors cover science, engineering, literature and social science, etc. Our course "History of the Optoelectronic Technology" is set up as an interdisciplinary lecture of the "liberal education" at our university, and is available for all students with different academic backgrounds from any departments of our university. The main purpose of the course is to show the interesting and colorful historical aspects of the development of this technology, so that the students from different departments could absorb the academic nourishment they wanted. There are little complex derivations of physical formulas through the whole lecture, but there are still some difficulties about the lecture which is discussed in this paper.

Widely tunable opto-electronic oscillator based on a dual frequency laser

NASA Astrophysics Data System (ADS)

Maxin, J.; Saleh, K.; Pillet, G.; Morvan, L.; Llopis, O.; Dolfi, D.

2013-03-01

We present the stabilization of the beatnote of an Er,Yb:glass Dual Frequency Laser at 1.53 μm with optical fiber delay lines. Instead of standard optoelectronics oscillators, this architecture does not need RF filter and offers a wide tunability from 2.5 to 5.5 GHz. Thank to a fine analysis of the laser RIN to phase noise conversion in the photodiodes, the expected RF-amplifiers noise limit is reached with a phase noise power spectral density of -25 dBc/Hz at 10 Hz (respectively -110 dBc/Hz at 10 kHz) from the carrier over the whole tuning range. Implementation of a double fiber coil architecture improves the oscillator spectral purity: the phase noise reaches a level of -35 dBc/Hz at 10 Hz (respectively -112 dBc/Hz respectively 10 kHz) from the carrier.

Computational Studies on Optoelectronic and Nonlinear Properties of Octaphyrin Derivatives

PubMed Central

Islam, Nasarul; Lone, Irfan H.

2017-01-01

The electronic and nonlinear optical (NLO) properties of octaphyrin derivatives were studied by employing the DFT/TDFT at CAM-B3LYP/6-311++G (2d, 2p) level of the theory. Thiophene, phenyl, methyl and cyano moieties were substituted on the molecular framework of octaphyrin core, in order to observe the change in optoelectronic and nonlinear response of these systems. The frontier molecular orbital studies and values of electron affinity reveals that the studied compounds are stable against the oxygen and moisture present in air. The calculated ionization energies, adiabatic electron affinity and reorganization energy values indicate that octaphyrin derivatives can be employed as effective n-type material for Organic Light Emitting Diodes (OLEDs). This character shows an enhancement with the introduction of an electron withdrawing group in the octaphyrin framework. The polarizability and hyperpolarizability values of octaphyrin derivatives demonstrate that they are good candidates for NLO devices. The nonlinear response of these systems shows enhancement on the introduction of electron donating groups on octaphyrin moiety. However, these claims needs further experimental verification. PMID:28321394

Electron-stimulated reactions in nanoscale water films adsorbed on (alpha)-Al2O3(0001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petrik, Nikolay G.; Kimmel, Gregory A.

2018-05-11

The radiation-induced decomposition and desorption of nanoscale amorphous solid water (D2O) films adsorbed on -Al2O3(0001) surface was studied at low temperature in ultrahigh vacuum using temperature programmed desorption (TPD) and electron stimulated desorption (ESD) with a mono-energetic, low energy electron source. ESD yields of molecular products ( D2, O2 and D¬2O) and the total sputtering yield increased with increasing D2O coverage up to ~15 water monolayers (i.e. ~15 1015 cm-2) to a coverage-independent level for thicker water films. Experiments with isotopically-layered water films (D2O and H2O) demonstrated that the highest water decomposition yields occurred at the interfaces of the nanoscalemore » water films with the alumina substrate and vacuum. However, the increased reactivity of the water/alumina interface is relatively small compared to the enhancements in the non-thermal reactions previously observed at the water/Pt(111) and water/TiO2(110) interfaces. We propose that the relatively low activity of Al2O3(0001) for the radiation-induced production of molecular hydrogen is associated with lower reactivity of this surface with hydrogen atoms, which are likely precursors for the molecular hydrogen.« less

Optoelectronic Technology Consortium: Precompetitive Consortium for Optoelectronic Interconnect Technology

DTIC Science & Technology

1992-09-01

demonstrating the producibility of optoelectronic components for high-density/high-data-rate processors and accelerating the insertion of this technology...technology development stage, OETC will advance the development of optical components, produce links for a multiboard processor testbed demonstration, and...components that are affordable, initially at <$100 per line, and reliable, with a li~e BER᝺-15 and MTTF >10 6 hours. Under the OETC program, Honeywell will

Radiation Effects on Optoelectronic Devices in Space Missions

NASA Technical Reports Server (NTRS)

Johnston, Allan H.

2006-01-01

Radiation degradation of optoelectronic devices is discussed, including effects on optical emitters, detectors and optocouplers. The importance of displacement damage is emphasized, including the limitations of non-ionizing energy loss (NIEL) in normalizing damage. Failures of optoelectronics in fielded space systems are discussed, along with testing and qualification methods.

Strain-engineered optoelectronic properties of 2D transition metal dichalcogenide lateral heterostructures

DOE PAGES

Lee, Jaekwang; Huang, Jingsong; Sumpter, Bobby G.; ...

2017-02-17

Compared with their bulk counterparts, 2D materials can sustain much higher elastic strain at which optical quantities such as bandgaps and absorption spectra governing optoelectronic device performance can be modified with relative ease. Using first-principles density functional theory and quasiparticle GW calculations, we demonstrate how uniaxial tensile strain can be utilized to optimize the electronic and optical properties of transition metal dichalcogenide lateral (in-plane) heterostructures such as MoX 2/WX 2 (X = S, Se, Te). We find that these lateral-type heterostructures may facilitate efficient electron–hole separation for light detection/harvesting and preserve their type II characteristic up to 12% of uniaxialmore » strain. Based on the strain-dependent bandgap and band offset, we show that uniaxial tensile strain can significantly increase the power conversion efficiency of these lateral heterostructures. Our results suggest that these strain-engineered lateral heterostructures are promising for optimizing optoelectronic device performance by selectively tuning the energetics of the bandgap.« less

Recent advances in large-scale assembly of semiconducting inorganic nanowires and nanofibers for electronics, sensors and photovoltaics.

PubMed

Long, Yun-Ze; Yu, Miao; Sun, Bin; Gu, Chang-Zhi; Fan, Zhiyong

2012-06-21

Semiconducting inorganic nanowires (NWs), nanotubes and nanofibers have been extensively explored in recent years as potential building blocks for nanoscale electronics, optoelectronics, chemical/biological/optical sensing, and energy harvesting, storage and conversion, etc. Besides the top-down approaches such as conventional lithography technologies, nanowires are commonly grown by the bottom-up approaches such as solution growth, template-guided synthesis, and vapor-liquid-solid process at a relatively low cost. Superior performance has been demonstrated using nanowires devices. However, most of the nanowire devices are limited to the demonstration of single devices, an initial step toward nanoelectronic circuits, not adequate for production on a large scale at low cost. Controlled and uniform assembly of nanowires with high scalability is still one of the major bottleneck challenges towards the materials and device integration for electronics. In this review, we aim to present recent progress toward nanowire device assembly technologies, including flow-assisted alignment, Langmuir-Blodgett assembly, bubble-blown technique, electric/magnetic- field-directed assembly, contact/roll printing, planar growth, bridging method, and electrospinning, etc. And their applications in high-performance, flexible electronics, sensors, photovoltaics, bioelectronic interfaces and nano-resonators are also presented.

International Workshop on Light Emission and Electronic Properties of Nanoscale Silicon

DTIC Science & Technology

1994-04-01

matrix elements, quantum confinement, surface effects ? CHARLOTFE STANDARD R. Tsu Comparison of Luminescence Efficiency ROLE OF NANOSCALE Si-DEVICES...confinement effects in microcrystalline silicon [2,3] may lead to revolutionary advances in speed and dramatically reduced energy consumption of silicon...Formation: A Quantum Wire Effect ," Avpl. Phys. Lett., 58, 856 (1991). 5. R. Tsu, H. Shen, and M. Dutta, "Correlation of Raman and Photoluminescence

Predictive modeling of synergistic effects in nanoscale ion track formation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zarkadoula, Eva; Pakarinen, Olli H.; Xue, Haizhou

Molecular dynamics techniques and the inelastic thermal spike model are used to study the coupled effects of inelastic energy loss due to 21 MeV Ni ion irradiation and pre-existing defects in SrTiO 3. We determine the dependence on pre-existing defect concentration of nanoscale track formation occurring from the synergy between the inelastic energy loss and the pre-existing atomic defects. We show that the nanoscale ion tracks’ size can be controlled by the concentration of pre-existing disorder. This work identifies a major gap in fundamental understanding concerning the role played by defects in electronic energy dissipation and electron–lattice coupling.

Predictive modeling of synergistic effects in nanoscale ion track formation

DOE PAGES

Zarkadoula, Eva; Pakarinen, Olli H.; Xue, Haizhou; ...

2015-08-05

Molecular dynamics techniques and the inelastic thermal spike model are used to study the coupled effects of inelastic energy loss due to 21 MeV Ni ion irradiation and pre-existing defects in SrTiO 3. We determine the dependence on pre-existing defect concentration of nanoscale track formation occurring from the synergy between the inelastic energy loss and the pre-existing atomic defects. We show that the nanoscale ion tracks’ size can be controlled by the concentration of pre-existing disorder. This work identifies a major gap in fundamental understanding concerning the role played by defects in electronic energy dissipation and electron–lattice coupling.

Fabrication of self-aligned, nanoscale, complex oxide varactors

NASA Astrophysics Data System (ADS)

Fu, Richard X.; Toonen, Ryan C.; Hirsch, Samuel G.; Ivill, Mathew P.; Cole, Melanie W.; Strawhecker, Kenneth E.

2015-01-01

Applications in ferroelectric random access memory and superparaelectric devices require the fabrication of ferroelectric capacitors at the nanoscale that exhibit extremely small leakage currents. To systematically study the material-size dependence of ferroelectric varactor performance, arrays of parallel-plate structures have been fabricated with nanoscale dielectric diameters. Electron beam lithography and inductively coupled plasma dry etching have been used to fabricate arrays of ferroelectric varactors using top electrodes as a self-aligned etch mask. Parallel-plate test structures using RF-sputtered Ba0.6Sr0.4TiO3 thin-films were used to optimize the fabrication process. Varactors with diameters down to 20 nm were successfully fabricated. Current-voltage (I-V) characteristics were measured to evaluate the significance of etch-damage and fabrication quality by ensuring low leakage currents through the structures.

Correlating Microstructure and Optoelectronic Performance of Carbon-Based Nanomaterials

NASA Astrophysics Data System (ADS)

Rochford, Caitlin

There is a great deal of interest in carbon nanostructures such as graphene and various forms of carbon nanotubes due to their exceptional physical, electronic, and optical properties. Many technological applications have been proposed for these nanostructures, but despite the promise many carbon nanostructure-based optoelectronic devices fail to compete with their conventional counterparts. This is often due in large part to a non-optimized material or device microstructure. Factors such as crystallinity, contact quality, defect structure, and device configuration can critically affect device performance due to the high sensitivity and extreme surface to volume ratio of carbon nanostructures. In order for the exceptional intrinsic properties of the nanostructures to be exploited, a clear understanding of the microstructure and its correlation with device-relevant optoelectronic properties is needed. This dissertation presents four projects which demonstrate this principle. First, a TiO 2-coated carbon nanofiber is studied in order to optimize its structure for use in a novel dye-sensitized solar cell. Second, the electrode configuration of an individual multiwall carbon nanotube infrared sensor is investigated in order to surpass the limitations of disordered nanotube film-based infrared sensors. Third, the properties of defect structures in large area transferred graphene films grown by chemical vapor deposition are correlated with carrier diffusion in order to understand the film's low mobility compared to exfoliated graphene. Fourth, the effect of deposition conditions on graphene-metal contact was studied with the goal of achieving sufficiently transparent contacts for investigation of the superconducting proximity effect. All four projects highlight the unique properties of carbon nanostructures as well as the need to correlate their optoelectronic properties with microstructural details in order to achieve the desired device performance.

Study of nanoscale structural biology using advanced particle beam microscopy

NASA Astrophysics Data System (ADS)

Boseman, Adam J.

This work investigates developmental and structural biology at the nanoscale using current advancements in particle beam microscopy. Typically the examination of micro- and nanoscale features is performed using scanning electron microscopy (SEM), but in order to decrease surface charging, and increase resolution, an obscuring conductive layer is applied to the sample surface. As magnification increases, this layer begins to limit the ability to identify nanoscale surface structures. A new technology, Helium Ion Microscopy (HIM), is used to examine uncoated surface structures on the cuticle of wild type and mutant fruit flies. Corneal nanostructures observed with HIM are further investigated by FIB/SEM to provide detailed three dimensional information about internal events occurring during early structural development. These techniques are also used to reconstruct a mosquito germarium in order to characterize unknown events in early oogenesis. Findings from these studies, and many more like them, will soon unravel many of the mysteries surrounding the world of developmental biology.

Nanoscale Imaging of Light-Matter Coupling Inside Metal-Coated Cavities with a Pulsed Electron Beam.

PubMed

Moerland, Robert J; Weppelman, I Gerward C; Scotuzzi, Marijke; Hoogenboom, Jacob P

2018-05-02

Many applications in (quantum) nanophotonics rely on controlling light-matter interaction through strong, nanoscale modification of the local density of states (LDOS). All-optical techniques probing emission dynamics in active media are commonly used to measure the LDOS and benchmark experimental performance against theoretical predictions. However, metal coatings needed to obtain strong LDOS modifications in, for instance, nanocavities, are incompatible with all-optical characterization. So far, no reliable method exists to validate theoretical predictions. Here, we use subnanosecond pulses of focused electrons to penetrate the metal and excite a buried active medium at precisely defined locations inside subwavelength resonant nanocavities. We reveal the spatial layout of the spontaneous-emission decay dynamics inside the cavities with deep-subwavelength detail, directly mapping the LDOS. We show that emission enhancement converts to inhibition despite an increased number of modes, emphasizing the critical role of optimal emitter location. Our approach yields fundamental insight in dynamics at deep-subwavelength scales for a wide range of nano-optical systems.

Optoelectronic properties of CC2TA towards a good TADF material

NASA Astrophysics Data System (ADS)

Mishra, Ashok Kumar

2018-05-01

2,4-bis{f3-(9H-carbazol-9-yl)-9H-carbazol-9-yl}-6-phenyl-1,3,5-triazine (CC2TA) is a triazine derivatives in which the acceptor phenyltriazine unit is used as the central skeleton and donor bicarbazole units are bonded to both ends of the skeleton. Molecular orbital calculations exhibit that the HOMO and LUMO are locally allocated chiefly in the bicarbazole and phenyltriazine units, respectively. There are a class of organic molecules and polymers which exhibit semiconductor behavior because of nearly free conjugate π-electrons. Hopping of these electrons in molecules forms different excited singlet and triplet states named as excitons. Some of these organic molecules can be set to emit photons by triplet-singlet excitonic transition via a process called Thermally Activated Delayed Fluorescence (TADF) which is exploited for designing the Organic Light Emitting diode (OLED.) CC2TA is one of these reported noble metal-free TADF molecules which offers unique opto electronic properties arising from the reverse intersystem crossing between the lowest singlet (S) and triplet (T) excited states. Its ability to harvest triplet excitons for fluorescence through facilitated reverse intersystem crossing (T→S) could directly impact their properties and performances, which is attractive for a wide variety of low-cost optoelectronic device. In the present study, the CC2TA compounds have been taken up for the investigation of various optoelectronic properties including the thermally activated delayed fluorescence (TADF) by using the Koopmans Method and Density Functional Theory. The present study discusses the utility of the CC2TA organic semiconductor as a suitable TADF material essential for developing an efficient Organic Light Emitting Diode (OLED).

Optoelectronic response of a WS2 tubular p-n junction

NASA Astrophysics Data System (ADS)

Zhang, Y. J.; Onga, M.; Qin, F.; Shi, W.; Zak, A.; Tenne, R.; Smet, J.; Iwasa, Y.

2018-07-01

Due to their favourable and rich electronic and optical properties, group-VI-B transition-metal dichalcogenides (TMDs) have attracted considerable interest. They have earned their position in the materials portfolio of the spintronics and valleytronics communities. The electrical performance of TMDs is enhanced by rolling up the two-dimensional (2D) sheets to form quasi-one-dimensional (1D) tubular structures. The fabrication of p-n junctions out of these tubular TMDs would boost their potential for optoelectronic devices as such junctions represent a fundamental building block. Here, we report the realization of a p-n junction out of a single, isolated WS2-nanotube (WS2-NT). Light-emitting diode operation and photovoltaic behaviour were observed based on such p-n junctions. The emitted light as well as the photovoltaic effect exhibit strong linear polarization characteristics due to the quasi-1D nature. The external quantum efficiency for the photovoltaic effect reaches a value as high as 4.8%, exceeding by far that of 2D TMDs and even approaching the internal quantum efficiency of the 2D TMDs. This efficiency improvement indicates that TMD nanotubes are superior candidates over 2D TMDs for optoelectronic applications.

Research strategies for safety evaluation of nanomaterials, part VII: evaluating consumer exposure to nanoscale materials.

PubMed

Thomas, Treye; Thomas, Karluss; Sadrieh, Nakissa; Savage, Nora; Adair, Patricia; Bronaugh, Robert

2006-05-01

Considerable media attention has recently been given to novel applications for products that contain nanoscale materials. These products could have utility in several industries that market consumer products, including textiles, sporting equipment, cosmetics, consumer electronics, and household cleaners. Some of the purported benefits of these products include improved performance, convenience, lower cost, as well as other desirable features, when compared to the conventional products that do not contain nanoscale materials. Although there are numerous likely consumer advantages from products containing nanoscale materials, there is very little information available regarding consumer exposure to the nanoscale materials in these products or any associated risks from these exposures. This paper seeks to review a limited subset of products that contain nanoscale materials, assess the available data for evaluating the consumer exposures and potential hazards associated with these products, and discuss the capacity of U.S. regulatory agencies to address the potential risks associated with these products.

Effects of nanoscale vacuum gap on photon-enhanced thermionic emission devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yuan; Liao, Tianjun; Zhang, Yanchao

2016-01-28

A new model of the photon-enhanced thermionic emission (PETE) device with a nanoscale vacuum gap is established by introducing the quantum tunneling effect and the image force correction. Analytic expressions for both the thermionic emission and tunneling currents are derived. The electron concentration and the temperature of the cathode are determined by the particle conservation and energy balance equations. The effects of the operating voltage on the maximum potential barrier, cathode temperature, electron concentration and equilibrium electron concentration of the conduction band, and efficiency of the PETE device are discussed in detail for different given values of the vacuum gapmore » length. The influence of the band gap of the cathode and flux concentration on the efficiency is further analyzed. The maximum efficiency of the PETE and the corresponding optimum values of the band gap and the operating voltage are determined. The results obtained here show that the efficiency of the PETE device can be significantly improved by employing a nanoscale vacuum gap.« less

Optoelectronic device for the measurement of the absolute linear position in the micrometric displacement range

NASA Astrophysics Data System (ADS)

Morlanes, Tomas; de la Pena, Jose L.; Sanchez-Brea, Luis M.; Alonso, Jose; Crespo, Daniel; Saez-Landete, Jose B.; Bernabeu, Eusebio

2005-07-01

In this work, an optoelectronic device that provides the absolute position of a measurement element with respect to a pattern scale upon switch-on is presented. That means that there is not a need to perform any kind of transversal displacement after the startup of the system. The optoelectronic device is based on the process of light propagation passing through a slit. A light source with a definite size guarantees the relation of distances between the different elements that constitute our system and allows getting a particular optical intensity profile that can be measured by an electronic post-processing device providing the absolute location of the system with a resolution of 1 micron. The accuracy of this measuring device is restricted to the same limitations of any incremental position optical encoder.

Synthesis and optoelectronic properties of dodecyl substituted diphenylamine and pyridine based conjugated molecule

NASA Astrophysics Data System (ADS)

Priyanka, V.; Vijai Anand, A. S.; Mahesh, K.; Karpagam, S.

2017-11-01

The new donor-acceptor type conjugated moiety, namely 3-([4-(2-Cyano-2pyridine-2yl-vinyl)-phenyl]-dodecyl-amino)-phenyl)-2-pyridine-2-yl-acrylonitrile (DPA-PA) has been synthesized according to the Knoevenagel condensation. Here dodecyloxy diphenylamine moiety acts as an electron donor and cyano-pyridyl moiety acts as an electron acceptor. These moieties are recently showing great interest in optoelectronic applications. The structure of the DPA-PA was confirmed by FT-IR, 1H NMR. The final product showed great solubility in common organic solvents such as toluene, tetrahydrofuran, ethyl acetate, dichloromethane, chloroform etc due to the dodecyl chain. The absorption maximum of DPA-PA appeared at 433 nm in chloroform solution. The optical band gap is 2.2 eV calculated from thin film absorption edge (550 nm). The photoluminescence spectra exhibited a maximum peak at 513 nm with greenish fluorescence in chloroform solution and at 541 nm as the thin film state. The emission spectra of thin film state are 28 nm red shifted with broadening peak. The lower electrochemical band gap 1.55 eV was observed by cyclic voltammetry. This type of low band gap materials has much attention for their various potential applications in optoelectronic devices.

Web-Enabled Optoelectronic Particle-Fallout Monitor

NASA Technical Reports Server (NTRS)

Lineberger, Lewis P.

2008-01-01

A Web-enabled optoelectronic particle- fallout monitor has been developed as a prototype of future such instruments that (l) would be installed in multiple locations for which assurance of cleanliness is required and (2) could be interrogated and controlled in nearly real time by multiple remote users. Like prior particle-fallout monitors, this instrument provides a measure of particles that accumulate on a surface as an indication of the quantity of airborne particulate contaminants. The design of this instrument reflects requirements to: Reduce the cost and complexity of its optoelectronic sensory subsystem relative to those of prior optoelectronic particle fallout monitors while maintaining or improving capabilities; Use existing network and office computers for distributed display and control; Derive electric power for the instrument from a computer network, a wall outlet, or a battery; Provide for Web-based retrieval and analysis of measurement data and of a file containing such ancillary data as a log of command attempts at remote units; and Use the User Datagram Protocol (UDP) for maximum performance and minimal network overhead.

Three-dimensional nanoscale imaging by plasmonic Brownian microscopy

NASA Astrophysics Data System (ADS)

Labno, Anna; Gladden, Christopher; Kim, Jeongmin; Lu, Dylan; Yin, Xiaobo; Wang, Yuan; Liu, Zhaowei; Zhang, Xiang

2017-12-01

Three-dimensional (3D) imaging at the nanoscale is a key to understanding of nanomaterials and complex systems. While scanning probe microscopy (SPM) has been the workhorse of nanoscale metrology, its slow scanning speed by a single probe tip can limit the application of SPM to wide-field imaging of 3D complex nanostructures. Both electron microscopy and optical tomography allow 3D imaging, but are limited to the use in vacuum environment due to electron scattering and to optical resolution in micron scales, respectively. Here we demonstrate plasmonic Brownian microscopy (PBM) as a way to improve the imaging speed of SPM. Unlike photonic force microscopy where a single trapped particle is used for a serial scanning, PBM utilizes a massive number of plasmonic nanoparticles (NPs) under Brownian diffusion in solution to scan in parallel around the unlabeled sample object. The motion of NPs under an evanescent field is three-dimensionally localized to reconstruct the super-resolution topology of 3D dielectric objects. Our method allows high throughput imaging of complex 3D structures over a large field of view, even with internal structures such as cavities that cannot be accessed by conventional mechanical tips in SPM.

PREFACE: Superconductivity in ultrathin films and nanoscale systems Superconductivity in ultrathin films and nanoscale systems

NASA Astrophysics Data System (ADS)

Bianconi, Antonio; Bose, Sangita; Garcia-Garcia, Antonio Miguel

2012-12-01

The recent technological developments in the synthesis and characterization of high-quality nanostructures and developments in the theoretical techniques needed to model these materials, have motivated this focus section of Superconductor Science and Technology. Another motivation is the compelling evidence that all new superconducting materials, such as iron pnictides and chalcogenides, diborides (doped MgB2) and fullerides (alkali-doped C60 compounds), are heterostrucures at the atomic limit, such as the cuprates made of stacks of nanoscale superconducting layers intercalated by different atomic layers with nanoscale periodicity. Recently a great amount of interest has been shown in the role of lattice nano-architecture in controlling the fine details of Fermi surface topology. The experimental and theoretical study of superconductivity in the nanoscale started in the early 1960s, shortly after the discovery of the BCS theory. Thereafter there has been rapid progress both in experiments and the theoretical understanding of nanoscale superconductors. Experimentally, thin films, granular films, nanowires, nanotubes and single nanoparticles have all been explored. New quantum effects appear in the nanoscale related to multi-component condensates. Advances in the understanding of shape resonances or Fano resonances close to 2.5 Lifshitz transitions near a band edge in nanowires, 2D films and superlattices [1, 2] of these nanosized modules, provide the possibility of manipulating new quantum electronic states. Parity effects and shell effects in single, isolated nanoparticles have been reported by several groups. Theoretically, newer techniques based on solving Richardson's equation (an exact theory incorporating finite size effects to the BCS theory) numerically by path integral methods or solving the entire Bogoliubov-de Gennes equation in these limits have been attempted, which has improved our understanding of the mechanism of superconductivity in these confined

Fine structural features of nanoscale zero-valent iron characterized by spherical aberration corrected scanning transmission electron microscopy (Cs-STEM).

PubMed

Liu, Airong; Zhang, Wei-xian

2014-09-21

An angstrom-resolution physical model of nanoscale zero-valent iron (nZVI) is generated with a combination of spherical aberration corrected scanning transmission electron microscopy (Cs-STEM), selected area electron diffraction (SAED), energy-dispersive X-ray spectroscopy (EDS) and electron energy-loss spectroscopy (EELS) on the Fe L-edge. Bright-field (BF), high-angle annular dark-field (HAADF) and secondary electron (SE) imaging of nZVI acquired by a Hitachi HD-2700 STEM show near atomic resolution images and detailed morphological and structural information of nZVI. The STEM-EDS technique confirms that the fresh nZVI comprises of a metallic iron core encapsulated with a thin layer of iron oxides or oxyhydroxides. SAED patterns of the Fe core suggest the polycrystalline structure in the metallic core and amorphous nature of the oxide layer. Furthermore, Fe L-edge of EELS shows varied structural features from the innermost Fe core to the outer oxide shell. A qualitative analysis of the Fe L(2,3) edge fine structures reveals that the shell of nZVI consists of a mixed Fe(II)/Fe(III) phase close to the Fe (0) interface and a predominantly Fe(III) at the outer surface of nZVI.

Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

NASA Astrophysics Data System (ADS)

Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

2017-07-01

Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

Nanoscale characterization of 1D Sn-3.5Ag nanosolders and their application into nanowelding at the nanoscale

NASA Astrophysics Data System (ADS)

Zhang, Hong; Zhang, Junwei; Lan, Qianqian; Ma, Hongbin; Qu, Ke; Inkson, Beverley J.; Mellors, Nigel J.; Xue, Desheng; Peng, Yong

2014-10-01

One-dimensional Sn-3.5Ag alloy nanosolders have been successfully fabricated by a dc electrodeposition technique into nanoporous templates, and their soldering quality has been demonstrated in nanoscale electrical welding for the first time, which indicates that they can easily form remarkably reliable conductive joints. The electrical measurement shows that individual 1D Sn-3.5Ag nanosolders have a resistivity of 28.9 μΩ·cm. The morphology, crystal structure and chemistry of these nanosolders have been characterized at the nanoscale. It is found that individual 1D Sn-3.5Ag alloy nanosolders have a continuous morphology and smooth surface. XPS confirms the presence of tin and silver with a mass ratio of 96.54:3.46, and EDX elemental mappings clearly reveal that the Sn and Ag elements have a uniform distribution. Coveragent beam electron diffractions verify that the crystal phases of individual 1D Sn-3.5Ag alloy nanosolders consist of matrix β-Sn and the intermetallic compound Ag3Sn. The reflow experiments reveal that the eutectic composition of the 1D Sn-Ag alloy nanowire is shifted to the Sn rich corner. This work may contribute one of the most important tin-based alloy nanosolders for future nanoscale welding techniques, which are believed to have broad applications in nanotechnology and the future nano-industry.

MBE growth of nitride-arsenides for long wavelength opto-electronics

NASA Astrophysics Data System (ADS)

Spruytte, Sylvia Gabrielle

2001-07-01

Until recently, the operating wavelength of opto-electronic devices on GaAs has been limited to below 1 mum due to the lack of III-V materials with close lattice match to GaAs that have a bandgap below 1.24 eV. To enable devices operating at 1.3 mum on GaAs, MBE growth of a new III-V material formed by adding small amounts of nitrogen to InGaAs was developed. The growth of group III-nitride-arsenides (GaInNAs) is complicated by the divergent properties of the alloy constituents and the difficulty of generating a reactive nitrogen species. Nitride-arsenide materials are grown by molecular beam epitaxy (MBE) using a radio frequency (rf) nitrogen plasma source. The plasma conditions that maximize the amount of atomic nitrogen versus molecular nitrogen are determined using the emission spectrum of the plasma. To avoid phase segregation, nitride-arsenides must be grown at relatively low temperatures and high arsenic overpressures. It is shown that the group III growth rate controls the nitrogen concentration in the film. Absorption measurements allow the establishment of a range of GaInNAs alloys yielding 1.3 mum emission. The optical properties of GaInNAs and GaNAs quantum wells (QWs) are investigated with photoluminescence (PL) measurements. The peak PL intensity increases and peak wavelength shifts to shorter wavelengths when annealing. The increase in luminescence efficiency results from a decrease in non-radiative recombination centers. As the impurity concentration in the GaInNAs films is low, crystal defects associated with nitrogen incorporation were investigated and improvements in crystal quality after anneal were observed. Nuclear reaction channeling measurements show that as-grown nitride-arsenides contain a considerable amount of interstitial nitrogen and that a substantial fraction of the non-substitutional nitrogen disappears during anneal. Secondary ion mass spectroscopy depth profiling on GaInNAs quantum wells shows that during anneal, the nitrogen

Atomically thin p-n junctions with van der Waals heterointerfaces.

PubMed

Lee, Chul-Ho; Lee, Gwan-Hyoung; van der Zande, Arend M; Chen, Wenchao; Li, Yilei; Han, Minyong; Cui, Xu; Arefe, Ghidewon; Nuckolls, Colin; Heinz, Tony F; Guo, Jing; Hone, James; Kim, Philip

2014-09-01

Semiconductor p-n junctions are essential building blocks for electronic and optoelectronic devices. In conventional p-n junctions, regions depleted of free charge carriers form on either side of the junction, generating built-in potentials associated with uncompensated dopant atoms. Carrier transport across the junction occurs by diffusion and drift processes influenced by the spatial extent of this depletion region. With the advent of atomically thin van der Waals materials and their heterostructures, it is now possible to realize a p-n junction at the ultimate thickness limit. Van der Waals junctions composed of p- and n-type semiconductors--each just one unit cell thick--are predicted to exhibit completely different charge transport characteristics than bulk heterojunctions. Here, we report the characterization of the electronic and optoelectronic properties of atomically thin p-n heterojunctions fabricated using van der Waals assembly of transition-metal dichalcogenides. We observe gate-tunable diode-like current rectification and a photovoltaic response across the p-n interface. We find that the tunnelling-assisted interlayer recombination of the majority carriers is responsible for the tunability of the electronic and optoelectronic processes. Sandwiching an atomic p-n junction between graphene layers enhances the collection of the photoexcited carriers. The atomically scaled van der Waals p-n heterostructures presented here constitute the ultimate functional unit for nanoscale electronic and optoelectronic devices.

Synthesis of nanoscale copper nitride thin film and modification of the surface under high electronic excitation.

PubMed

Ghosh, S; Tripathi, A; Ganesan, V; Avasthi, D K

2008-05-01

Nanoscale (approximately 90 nm) Copper nitride (Cu3N) films are deposited on borosilicate glass and Si substrates by RF sputtering technique in the reactive environment of nitrogen gas. These films are irradiated with 200 MeV Au15+ ions from Pelletron accelerator in order to modify the surface by high electronic energy deposition of heavy ions. Due to irradiation (i) at incident ion fluence of 1 x 10(12) ions/cm2 enhancement of grains, (ii) at 5 x 10912) ions/cm2 mass transport on the films surface, (iii) at 2 x 10(13) ions/cm2 line-like features on Cu3N/glass and nanometallic structures on Cu3N/Si surface are observed. The surface morphology is examined by atomic force microscope (AFM). All results are explained on the basis of a thermal spike model of ion-solid interaction.

Fabrication and nanoscale characterization of magnetic multilayer nanowires

NASA Astrophysics Data System (ADS)

Elawayeb, Mohamed

Magnetic multilayers nanowires are scientifically fascinating and have potential industrial applications in many areas of advanced nanotechnology. These applications arise due to the nanoscale dimensions of nanostructures that lead to unique physical properties. Magnetic multilayer nanowires have been successfully produced by electrodeposition into templates. Anodic Aluminium Oxide (AAO) membranes were used as templates in this process; the templates were fabricated by anodization method in acidic solutions at a fixed voltage. The fabrication method of a range of magnetic multilayer nanowires is described in this study and their structure and dimensions were analyzed using scanning electron microscope (SEM), Transmission electron microscope (TEM) and scanning transmission electron microscopy (STEM). This study is focused on the first growth of NiFe/Pt and NiFe/Fe magnetic multilayer nanowires, which were successfully fabricated by pulse electrodeposition into the channels of porous anodic aluminium oxide (AAO) templates, and characterized at the nanoscale. Individual nanowires have uniform structure and regular periodicity. The magnetic and nonmagnetic layers are polycrystalline, with randomly oriented fcc lattice structure crystallites. Chemical compositions of the individual nanowires were analyzed using TEM equipped with energy-dispersive x-ray analysis (EDX) and electron energy loss spectrometry (EELS). The electrical and magnetoresistance properties of individual magnetic multilayer nanowires have been measured inside a SEM using two sharp tip electrodes attached to in situ nanomanipulators and a new electromagnet technique. The giant magnetoresistance (GMR) effect of individual magnetic multilayer nanowires was measured in the current - perpendicular to the plane (CPP) geometry using a new in situ method at variable magnetic field strength and different orientations..

Fused thiophene-based conjugated polymers and their use in optoelectronic devices

DOEpatents

Facchetti, Antonio; Marks, Tobin J; Takai, Atsuro; Seger, Mark; Chen, Zhihua

2015-11-03

The present teachings relate to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

Recovery of Spectrally Overlapping QPSK Signals Using a Nonlinear Optoelectronic Filter

DTIC Science & Technology

2017-03-19

Spectrally Overlapping QPSK Signals Using a Nonlinear Optoelectronic Filter William Loh, Siva Yegnanarayanan, Kenneth E. Kolodziej, and Paul...recovery of a weak QPSK signal buried 35-dB beneath an interfering QPSK signal having an overlapping spectrum. This nonlinear optoelectronic filter ...from increased detection sensitivity. Here, we demonstrate an optoelectronic filter that enables the detection of a desired signal hidden beneath a

Spontaneous Self-Assembly of Perovskite Nanocrystals into Electronically Coupled Supercrystals: Toward Filling the Green Gap.

PubMed

Tong, Yu; Yao, En-Ping; Manzi, Aurora; Bladt, Eva; Wang, Kun; Döblinger, Markus; Bals, Sara; Müller-Buschbaum, Peter; Urban, Alexander S; Polavarapu, Lakshminarayana; Feldmann, Jochen

2018-06-05

Self-assembly of nanoscale building blocks into ordered nanoarchitectures has emerged as a simple and powerful approach for tailoring the nanoscale properties and the opportunities of using these properties for the development of novel optoelectronic nanodevices. Here, the one-pot synthesis of CsPbBr 3 perovskite supercrystals (SCs) in a colloidal dispersion by ultrasonication is reported. The growth of the SCs occurs through the spontaneous self-assembly of individual nanocrystals (NCs), which form in highly concentrated solutions of precursor powders. The SCs retain the high photoluminescence (PL) efficiency of their NC subunits, however also exhibit a redshifted emission wavelength compared to that of the individual nanocubes due to interparticle electronic coupling. This redshift makes the SCs pure green emitters with PL maxima at ≈530-535 nm, while the individual nanocubes emit a cyan-green color (≈512 nm). The SCs can be used as an emissive layer in the fabrication of pure green light-emitting devices on rigid or flexible substrates. Moreover, the PL emission color is tunable across the visible range by employing a well-established halide ion exchange reaction on the obtained CsPbBr 3 SCs. These results highlight the promise of perovskite SCs for light emitting applications, while providing insight into their collective optical properties. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Out-of-plane heat transfer in van der Waals stacks through electron-hyperbolic phonon coupling

NASA Astrophysics Data System (ADS)

Tielrooij, Klaas-Jan; Hesp, Niels C. H.; Principi, Alessandro; Lundeberg, Mark B.; Pogna, Eva A. A.; Banszerus, Luca; Mics, Zoltán; Massicotte, Mathieu; Schmidt, Peter; Davydovskaya, Diana; Purdie, David G.; Goykhman, Ilya; Soavi, Giancarlo; Lombardo, Antonio; Watanabe, Kenji; Taniguchi, Takashi; Bonn, Mischa; Turchinovich, Dmitry; Stampfer, Christoph; Ferrari, Andrea C.; Cerullo, Giulio; Polini, Marco; Koppens, Frank H. L.

2018-01-01

Van der Waals heterostructures have emerged as promising building blocks that offer access to new physics, novel device functionalities and superior electrical and optoelectronic properties1-7. Applications such as thermal management, photodetection, light emission, data communication, high-speed electronics and light harvesting8-16 require a thorough understanding of (nanoscale) heat flow. Here, using time-resolved photocurrent measurements, we identify an efficient out-of-plane energy transfer channel, where charge carriers in graphene couple to hyperbolic phonon polaritons17-19 in the encapsulating layered material. This hyperbolic cooling is particularly efficient, giving picosecond cooling times for hexagonal BN, where the high-momentum hyperbolic phonon polaritons enable efficient near-field energy transfer. We study this heat transfer mechanism using distinct control knobs to vary carrier density and lattice temperature, and find excellent agreement with theory without any adjustable parameters. These insights may lead to the ability to control heat flow in van der Waals heterostructures.

Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

PubMed Central

Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

2016-01-01

The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics. PMID:27507171

Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

NASA Astrophysics Data System (ADS)

Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

2016-08-01

The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics.

Ultrafast characterization of optoelectronic devices and systems

NASA Astrophysics Data System (ADS)

Zheng, Xuemei

The recent fast growth in high-speed electronics and optoelectronics has placed demanding requirements on testing tools. Electro-optic (EO) sampling is a well-established technique for characterization of high-speed electronic and optoelectronic devices and circuits. However, with the progress in device miniaturization, lower power consumption (smaller signal), and higher throughput (higher clock rate), EO sampling also needs to be updated, accordingly, towards better signal-to-noise ratio (SNR) and sensitivity, without speed sacrifice. In this thesis, a novel EO sampler with a single-crystal organic 4-dimethylamino-N-methy-4-stilbazolium tosylate (DAST) as the EO sensor is developed. The system exhibits sub-picosecond temporal resolution, sub-millivolt sensitivity, and a 10-fold improvement on SNR, compared with its LiTaO3 counterpart. The success is attributed to the very high EO coefficient, the very low dielectric constant, and the fast response, coming from the major contribution of the pi-electrons in DAST. With the advance of ultrafast laser technology, low-noise and compact femtosecond fiber lasers have come to maturation and become light-source options for ultrafast metrology systems. We have successfully integrated a femtosecond erbium-doped-fiber laser into an EO sampler, making the system compact and very reliable. The fact that EO sampling is essentially an impulse-response measurement process, requires integration of ultrashort (sub-picosecond) impulse generation network with the device under test. We have implemented a reliable lift-off and transfer technique in order to obtain epitaxial-quality freestanding low-temperature-grown GaAs (LT-GaAs) thin-film photo-switches, which can be integrated with many substrates. The photoresponse of our freestanding LT-GaAs devices was thoroughly characterized with the help of our EO sampler. As fast as 360 fs full-width-at-half-maximum (FWHM) and >1 V electrical pulses were obtained, with quantum efficiency

Rocket Science at the Nanoscale.

PubMed

Li, Jinxing; Rozen, Isaac; Wang, Joseph

2016-06-28

Autonomous propulsion at the nanoscale represents one of the most challenging and demanding goals in nanotechnology. Over the past decade, numerous important advances in nanotechnology and material science have contributed to the creation of powerful self-propelled micro/nanomotors. In particular, micro- and nanoscale rockets (MNRs) offer impressive capabilities, including remarkable speeds, large cargo-towing forces, precise motion controls, and dynamic self-assembly, which have paved the way for designing multifunctional and intelligent nanoscale machines. These multipurpose nanoscale shuttles can propel and function in complex real-life media, actively transporting and releasing therapeutic payloads and remediation agents for diverse biomedical and environmental applications. This review discusses the challenges of designing efficient MNRs and presents an overview of their propulsion behavior, fabrication methods, potential rocket fuels, navigation strategies, practical applications, and the future prospects of rocket science and technology at the nanoscale.

Analysis of optoelectronic strategic planning in Taiwan by artificial intelligence portfolio tool

NASA Astrophysics Data System (ADS)

Chang, Rang-Seng

1992-05-01

Taiwan ROC has achieved significant advances in the optoelectronic industry with some Taiwan products ranked high in the world market and technology. Six segmentations of optoelectronic were planned. Each one was divided into several strategic items, design artificial intelligent portfolio tool (AIPT) to analyze the optoelectronic strategic planning in Taiwan. The portfolio is designed to provoke strategic thinking intelligently. This computer- generated strategy should be selected and modified by the individual. Some strategies for the development of the Taiwan optoelectronic industry also are discussed in this paper.

Control of the hierarchical assembly of π-conjugated optoelectronic peptides by pH and flow

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mansbach, Rachael A.; Ferguson, Andrew L.

Self-assembled nanoaggregates of p-conjugated peptides possess optoelectronic properties due to electron delocalization over the conjugated peptide groups that make them attractive candidates for the fabrication of bioelectronic materials. We present a computational and theoretical study to resolve the microscopic effects of pH and flow on the non-equilibrium morphology and kinetics of early-stage assembly of an experimentally-realizable optoelectronic peptide that displays pH triggerable assembly. Employing coarse-grained molecular dynamics simulations, we probe the effects of pH on growth kinetics and aggregate morphology to show that control of the peptide protonation state by pH can be used to modulate the assembly rates, degreemore » of molecular alignment, and resulting morphologies within the self-assembling nanoaggregates. We also quantify the time and length scales at which convective flows employed in directed assembly compete with microscopic diffusion to show that flow influences cluster alignment and assembly rate during early-stage assembly only at extremely high shear rates. This suggests that observed improvements in optoelectronic properties at experimentally-accessible shear rates are due to the alignment of large aggregates of hundreds of monomers on time scales in excess of hundreds of nanoseconds. Lastly, our work provides new fundamental understanding of the effects of pH and flow to control the morphology and kinetics of early-stage assembly of p-conjugated peptides and lays the groundwork for the rational manipulation of environmental conditions to direct assembly and the attendant emergent optoelectronic properties.« less

Control of the hierarchical assembly of π-conjugated optoelectronic peptides by pH and flow

DOE PAGES

Mansbach, Rachael A.; Ferguson, Andrew L.

2017-01-01

Self-assembled nanoaggregates of p-conjugated peptides possess optoelectronic properties due to electron delocalization over the conjugated peptide groups that make them attractive candidates for the fabrication of bioelectronic materials. We present a computational and theoretical study to resolve the microscopic effects of pH and flow on the non-equilibrium morphology and kinetics of early-stage assembly of an experimentally-realizable optoelectronic peptide that displays pH triggerable assembly. Employing coarse-grained molecular dynamics simulations, we probe the effects of pH on growth kinetics and aggregate morphology to show that control of the peptide protonation state by pH can be used to modulate the assembly rates, degreemore » of molecular alignment, and resulting morphologies within the self-assembling nanoaggregates. We also quantify the time and length scales at which convective flows employed in directed assembly compete with microscopic diffusion to show that flow influences cluster alignment and assembly rate during early-stage assembly only at extremely high shear rates. This suggests that observed improvements in optoelectronic properties at experimentally-accessible shear rates are due to the alignment of large aggregates of hundreds of monomers on time scales in excess of hundreds of nanoseconds. Lastly, our work provides new fundamental understanding of the effects of pH and flow to control the morphology and kinetics of early-stage assembly of p-conjugated peptides and lays the groundwork for the rational manipulation of environmental conditions to direct assembly and the attendant emergent optoelectronic properties.« less

Exploration on the training mode of application-oriented talents majoring in optoelectronic information

NASA Astrophysics Data System (ADS)

Lv, Hao; Liu, Aimei; Zhang, Shengyi; Xiao, Yongjun

2017-08-01

The optoelectronic information major is a strong theoretical and practical specialty. In view of the problems existing in the application-oriented talents training in the optoelectronic information specialty. Five aspects of the talent cultivation plan, the teaching staff, the teaching content, the practical teaching and the scientific research on the training mode of application-oriented talents majoring in optoelectronic information are putted forward. It is beneficial to the specialty construction of optoelectronic information industry which become close to the development of enterprises, and the depth of the integration of school and enterprise service regional economic optoelectronic information high-end skilled personnel base.

Modelling of nanoscale quantum tunnelling structures using algebraic topology method

NASA Astrophysics Data System (ADS)

Sankaran, Krishnaswamy; Sairam, B.

2018-05-01

We have modelled nanoscale quantum tunnelling structures using Algebraic Topology Method (ATM). The accuracy of ATM is compared to the analytical solution derived based on the wave nature of tunnelling electrons. ATM provides a versatile, fast, and simple model to simulate complex structures. We are currently expanding the method for modelling electrodynamic systems.

Nanoscale visualization of electronic properties of AlxGa1-xN/AlyGa1-yN multiple quantum-well heterostructure by spreading resistance microscopy

NASA Astrophysics Data System (ADS)

Sviridov, D. E.; Kozlovsky, V. I.; Rong, X.; Chen, G.; Wang, X.; Jmerik, V. N.; Kirilenko, D. A.; Ivanov, S. V.

2017-01-01

Cross-sectional spreading resistance microscopy has been used to investigate nanoscale variations in electronic properties of an undoped Al0.75Ga0.25N/Al0.95Ga0.05N multiple quantum well (MQW) heterostructure grown by plasma-assisted molecular beam epitaxy on an AlN/c-sapphire template, prepared by metalorganic vapor phase epitaxy. It is found that a current signal from the MQWs can be detected only at a negative sample bias. Moreover, its value changes periodically from one quantum well (QW) to another. Analysis of the current-voltage characteristics of the contacts of a tip with the structure layers showed that periodic contrast of MQWs is the result of fluctuations of the chemical composition of the QWs and the concentration of electrons accumulated in them. Mathematical simulations indicate that this modulation is associated with the periodic fluctuations of an Al-mole fraction in the barrier layers of the structure due to counter gradients of the intensity of Al and Ga molecular fluxes across the surface of a substrate rotating slowly during growth. The nanoscale fluctuations of the current contrast observed along the QW layers are caused, most likely, by the presence of the areas of lateral carrier localization, which originate during the formation of QWs by sub-monolayer digital alloying technique.

A multi-channel opto-electronic sensor to accurately monitor heart rate against motion artefact during exercise.

PubMed

Alzahrani, Abdullah; Hu, Sijung; Azorin-Peris, Vicente; Barrett, Laura; Esliger, Dale; Hayes, Matthew; Akbare, Shafique; Achart, Jérôme; Kuoch, Sylvain

2015-10-12

This study presents the use of a multi-channel opto-electronic sensor (OEPS) to effectively monitor critical physiological parameters whilst preventing motion artefact as increasingly demanded by personal healthcare. The aim of this work was to study how to capture the heart rate (HR) efficiently through a well-constructed OEPS and a 3-axis accelerometer with wireless communication. A protocol was designed to incorporate sitting, standing, walking, running and cycling. The datasets collected from these activities were processed to elaborate sport physiological effects. t-test, Bland-Altman Agreement (BAA), and correlation to evaluate the performance of the OEPS were used against Polar and Mio-Alpha HR monitors. No differences in the HR were found between OEPS, and either Polar or Mio-Alpha (both p > 0.05); a strong correlation was found between Polar and OEPS (r: 0.96, p < 0.001); the bias of BAA 0.85 bpm, the standard deviation (SD) 9.20 bpm, and the limits of agreement (LOA) from -17.18 bpm to +18.88 bpm. For the Mio-Alpha and OEPS, a strong correlation was found (r: 0.96, p < 0.001); the bias of BAA 1.63 bpm, SD 8.62 bpm, LOA from -15.27 bpm to +18.58 bpm. These results demonstrate the OEPS to be capable of carrying out real time and remote monitoring of heart rate.

Influence of the Raman laser power on the opto-electronics properties in graphene with water molecule

NASA Astrophysics Data System (ADS)

Rey-GonzáLez, R. R.; Champi, A.; Rojas Cuervo, A. M.

The study of physical and chemical properties of nanostructures has contributed in great part with advance of the nanotechnology, which is important for the development of present and future technological applications. An important key in this purpose is the interaction of atoms and molecules with nanostructures. The principal interest of this experimental work is to study these processes on the interaction between liquid and vapor phases water with a graphene bilayer which is obtained through micromechanical exfoliation technique from a sample of natural graphite deposited on a SiO2 substrate. The number of layers and the interaction water-bilayer are analyzed systematically by means of Raman spectroscopy λ = 532nm). Also, the influence of variation of the Raman laser power and its effects in the opto-electronic properties of the system are studied. From the usual G, D and 2D bands of these spectra, we analyze the relation between the laser power and some band parameters, such as its area, position and wide. Finally, these results permit us to quantify the density of defects and the distance among them as function of Raman power before and after of the water vapor incorporation in bilayers Authors would like to thank the Programa Latino Americano de Física of Sociedade Brasileira de Física for their financial support. A. M. Rojas-Cuervo would also like to thank the Colciencias, Colombia.

Optoelectronic semiconductor device and method of fabrication

DOEpatents

Cui, Yi; Zhu, Jia; Hsu, Ching-Mei; Fan, Shanhui; Yu, Zongfu

2014-11-25

An optoelectronic device comprising an optically active layer that includes a plurality of domes is presented. The plurality of domes is arrayed in two dimensions having a periodicity in each dimension that is less than or comparable with the shortest wavelength in a spectral range of interest. By virtue of the plurality of domes, the optoelectronic device achieves high performance. A solar cell having high energy-conversion efficiency, improved absorption over the spectral range of interest, and an improved acceptance angle is presented as an exemplary device.

Interaction of Chemical Agents with Nanoscale Molecular Junctions

DTIC Science & Technology

2011-08-01

thiS burden to Department of Defense. Washilgton Headqualters Services. Directorate for lnformatie~n Operations and Reports (07()4.()188), 1215...The source of these contaminants were determined to be coming from the glovebox auxiliary vacuum pump, which normally operates continuously for...SAM- NHi NH2-SAM-Gold] molecular junction for analysis. In order to perform electron transport analysis of our nanoscale devices in a "real world

Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic.

PubMed

Shahrjerdi, Davood; Bedell, Stephen W

2013-01-09

In recent years, flexible devices based on nanoscale materials and structures have begun to emerge, exploiting semiconductor nanowires, graphene, and carbon nanotubes. This is primarily to circumvent the existing shortcomings of the conventional flexible electronics based on organic and amorphous semiconductors. The aim of this new class of flexible nanoelectronics is to attain high-performance devices with increased packing density. However, highly integrated flexible circuits with nanoscale transistors have not yet been demonstrated. Here, we show nanoscale flexible circuits on 60 Å thick silicon, including functional ring oscillators and memory cells. The 100-stage ring oscillators exhibit the stage delay of ~16 ps at a power supply voltage of 0.9 V, the best reported for any flexible circuits to date. The mechanical flexibility is achieved by employing the controlled spalling technology, enabling the large-area transfer of the ultrathin body silicon devices to a plastic substrate at room temperature. These results provide a simple and cost-effective pathway to enable ultralight flexible nanoelectronics with unprecedented level of system complexity based on mainstream silicon technology.

Plasmon-mediated chemical surface functionalization at the nanoscale

NASA Astrophysics Data System (ADS)

Nguyen, Mai; Lamouri, Aazdine; Salameh, Chrystelle; Lévi, Georges; Grand, Johan; Boubekeur-Lecaque, Leïla; Mangeney, Claire; Félidj, Nordin

2016-04-01

Controlling the surface grafting of species at the nanoscale remains a major challenge, likely to generate many opportunities in materials science. In this work, we propose an original strategy for chemical surface functionalization at the nanoscale, taking advantage of localized surface plasmon (LSP) excitation. The surface functionalization is demonstrated through aryl film grafting (derived from a diazonium salt), covalently bonded at the surface of gold lithographic nanostripes. The aryl film is specifically grafted in areas of maximum near field enhancement, as confirmed by numerical calculation based on the discrete dipole approximation method. The energy of the incident light and the LSP wavelength are shown to be crucial parameters to monitor the aryl film thickness of up to ~30 nm. This robust and versatile strategy opens up exciting prospects for the nanoscale confinement of functional layers on surfaces, which should be particularly interesting for molecular sensing or nanooptics.Controlling the surface grafting of species at the nanoscale remains a major challenge, likely to generate many opportunities in materials science. In this work, we propose an original strategy for chemical surface functionalization at the nanoscale, taking advantage of localized surface plasmon (LSP) excitation. The surface functionalization is demonstrated through aryl film grafting (derived from a diazonium salt), covalently bonded at the surface of gold lithographic nanostripes. The aryl film is specifically grafted in areas of maximum near field enhancement, as confirmed by numerical calculation based on the discrete dipole approximation method. The energy of the incident light and the LSP wavelength are shown to be crucial parameters to monitor the aryl film thickness of up to ~30 nm. This robust and versatile strategy opens up exciting prospects for the nanoscale confinement of functional layers on surfaces, which should be particularly interesting for molecular sensing

One-dimensional CdS nanostructures: a promising candidate for optoelectronics.

PubMed

Li, Huiqiao; Wang, Xi; Xu, Junqi; Zhang, Qi; Bando, Yoshio; Golberg, Dmitri; Ma, Ying; Zhai, Tianyou

2013-06-11

As a promising candidate for optoelectronics, one-dimensional CdS nanostructures have drawn great scientific and technical interest due to their interesting fundamental properties and possibilities of utilization in novel promising optoelectronical devices with augmented performance and functionalities. This progress report highlights a selection of important topics pertinent to optoelectronical applications of one-dimensional CdS nanostructures over the last five years. This article begins with the description of rational design and controlled synthesis of CdS nanostructure arrays, alloyed nanostructucures and kinked nanowire superstructures, and then focuses on the optoelectronical properties, and applications including cathodoluminescence, lasers, light-emitting diodes, waveguides, field emitters, logic circuits, memory devices, photodetectors, gas sensors, photovoltaics and photoelectrochemistry. Finally, the general challenges and the potential future directions of this exciting area of research are highlighted. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Can amorphization take place in nanoscale interconnects?

PubMed

Kumar, S; Joshi, K L; van Duin, A C T; Haque, M A

2012-03-09

The trend of miniaturization has highlighted the problems of heat dissipation and electromigration in nanoelectronic device interconnects, but not amorphization. While amorphization is known to be a high pressure and/or temperature phenomenon, we argue that defect density is the key factor, while temperature and pressure are only the means. For nanoscale interconnects carrying modest current density, large vacancy concentrations may be generated without the necessity of high temperature or pressure due to the large fraction of grain boundaries and triple points. To investigate this hypothesis, we performed in situ transmission electron microscope (TEM) experiments on 200 nm thick (80 nm average grain size) aluminum specimens. Electron diffraction patterns indicate partial amorphization at modest current density of about 10(5) A cm(-2), which is too low to trigger electromigration. Since amorphization results in drastic decrease in mechanical ductility as well as electrical and thermal conductivity, further increase in current density to about 7 × 10(5) A cm(-2) resulted in brittle fracture failure. Our molecular dynamics (MD) simulations predict the formation of amorphous regions in response to large mechanical stresses (due to nanoscale grain size) and excess vacancies at the cathode side of the thin films. The findings of this study suggest that amorphization can precede electromigration and thereby play a vital role in the reliability of micro/nanoelectronic devices.

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

NASA Technical Reports Server (NTRS)

Pavlidis, Dimitris

1991-01-01

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

NASA Astrophysics Data System (ADS)

Pavlidis, Dimitris

1991-02-01

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

PubMed

Zhang, Panlong; Wang, Haibo; Yan, Donghang

2017-09-01

A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm 2 V -1 s -1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Orienting Periodic Organic-Inorganic Nanoscale Domains Through One-Step Electrodeposition

PubMed Central

Herman, David J.; Goldberger, Joshua E.; Chao, Stephen; Martin, Daniel T.; Stupp, Samuel I

2011-01-01

One of the challenges in the synthesis of hybrid materials with nanoscale structure is to precisely control morphology across length scales. Using a one-step electrodeposition process on indium tin oxide (ITO) substrates followed by annealing, we report here the preparation of materials with preferentially oriented lamellar domains of electron donor surfactants and the semiconductor ZnO. We found that either increasing the concentration of surfactant or the water to dimethyl sulfoxide ratio of solutions used resulted in the suppression of bloom-like morphologies and enhanced the density of periodic domains on ITO substrates. Furthermore, by modifying the surface of the ITO substrate with the conductive polymer blend poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate), we were able to alter the orientation of these electrodeposited lamellar domains to be perpendicular to the substrate. The long-range orientation achieved was characterized by 2D grazing incidence small angle X-ray scattering. This high degree of orientation in electronically active hybrids with alternating nanoscale p-type and n-type domains is of potential interest in photovoltaics or thermoelectric materials. PMID:21142087

Identifying the Assembly Configuration and Fluorescence Spectra of Nanoscale Zinc-Tetraphenylporphyrin Aggregates with Scanning Tunneling Microscopy

PubMed Central

Zhang, Xiao-Lei; Jiang, Jian-Wei; Liu, Yi-Ting; Lou, Shi-Tao; Gao, Chun-Lei; Jin, Qing-Yuan

2016-01-01

ZnTPP (Zinc-Tetraphenylporphyrin) is one of the most common nanostructured materials, having high stability and excellent optoelectronic properties. In this paper, the fluorescence features of self-assembled ZnTPP monomers and aggregates on Au(111) surface are investigated in detail on the nanometer scale with scanning tunneling microscopy (STM). The formation of ZnTPP dimers is found in thick layers of a layer-by-layer molecular assembly on Au substrate with its specific molecular arrangement well characterized. Tip-induced luminescence shows a red shift from tilted dimers comparing with the behavior from monomers, which can be attributed to the change of vibrational states due to the intermolecular interaction and the increasing dielectric effect. The nanoscale configuration dependence of electroluminescence is demonstrated to provide a powerful tool aiding the design of functional molecular photoelectric devices. PMID:26948654

Nanoscale Ionic Liquids

DTIC Science & Technology

2006-11-01

Technical Report 11 December 2005 - 30 November 2006 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Nanoscale Ionic Liquids 5b. GRANT NUMBER FA9550-06-1-0012...Title: Nanoscale Ionic Liquids Principal Investigator: Emmanuel P. Giannelis Address: Materials Science and Engineering, Bard Hall, Cornell University...based fluids exhibit high ionic conductivity. The NFs are typically synthesized by grafting a charged, oligomeric corona onto the nanoparticle cores

Rare earth doped III-nitride semiconductors for spintronic and optoelectronic applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Palai, Ratnakar

2016-10-01

Since last four decades the information and communication technologies are relying on the semiconductor materials. Currently a great deal of attention is being focused on adding spin degree-of-freedom into semiconductor to create a new area of solid-state electronics, called spintronics. In spintronics not only the current but also its spin state is controlled. Such materials need to be good semiconductors for easy integration in typical integrated circuits with high sensitivity to the spin orientation, especially room temperature ferromagnetism being an important desirable property. GaN is considered to be the most important semiconductor after silicon. It is widely used for the production of green, blue, UV, and white LEDs in full color displays, traffic lights, automotive lightings, and general room lighting using white LEDs. GaN-based systems also show promise for microwave and high power electronics intended for radar, satellite, wireless base stations and spintronic applications. Rare earth (Yb, Eu, Er, and Tm) doped GaN shows many interesting optoelectronic and magnetoptic properties e. g. sharp emission from UV through visible to IR, radiation hardness, and ferromagnetism. The talk will be focused on fabrication, optoelectronic (photoluminescence, cathodeluminescence, magnetic, and x-ray photoelectron spectroscopy) properties of some rare earth doped GaN and InGaN semiconductor nanostructures grown by plasma assisted molecular beam epitaxy (MBE) and future applications.

An open-source platform to study uniaxial stress effects on nanoscale devices

NASA Astrophysics Data System (ADS)

Signorello, G.; Schraff, M.; Zellekens, P.; Drechsler, U.; Bürge, M.; Steinauer, H. R.; Heller, R.; Tschudy, M.; Riel, H.

2017-05-01

We present an automatic measurement platform that enables the characterization of nanodevices by electrical transport and optical spectroscopy as a function of the uniaxial stress. We provide insights into and detailed descriptions of the mechanical device, the substrate design and fabrication, and the instrument control software, which is provided under open-source license. The capability of the platform is demonstrated by characterizing the piezo-resistance of an InAs nanowire device using a combination of electrical transport and Raman spectroscopy. The advantages of this measurement platform are highlighted by comparison with state-of-the-art piezo-resistance measurements in InAs nanowires. We envision that the systematic application of this methodology will provide new insights into the physics of nanoscale devices and novel materials for electronics, and thus contribute to the assessment of the potential of strain as a technology booster for nanoscale electronics.

Coarse-Grained Molecular Simulation of the Hierarchical Self-Assembly of π-Conjugated Optoelectronic Peptides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mansbach, Rachael A.; Ferguson, Andrew L.

Self-assembled aggregates of peptides containing aromatic groups possess optoelectronic properties that make them attractive targets for the fabrication of biocompatible electronics. Molecular-level understanding of how the microscopic peptide chemistry influences the properties of the aggregates is vital for rational peptide design. We construct a coarse-grained model of Asp-Phe-Ala-Gly-OPV3-Gly-Ala-Phe-Asp (DFAG-OPV3-GAFD) peptides containing OPV3 (distyrylbenzene) π-conjugated cores explicitly parameterized against all-atom calculations and perform molecular dynamics simulations of the self-assembly of hundreds of molecules over hundreds of nanoseconds. We observe a hierarchical assembly mechanism wherein ~2-8 peptides assemble into stacks with aligned aromatic cores that subsequently form elliptical aggregates and ultimately amore » branched network with a fractal dimensionality of ~1.5. The assembly dynamics are well described by a Smoluchowski coagulation process for which we extract rate constants from the molecular simulations to both furnish insight into the microscopic assembly kinetics and extrapolate our aggregation predictions to time and length scales beyond the reach of molecular simulation. Lastly, this study presents new molecular-level understanding of the morphology and dynamics of the spontaneous self-assembly of DFAG-OPV3-GAFD peptides and establishes a systematic protocol to develop coarse-grained models of optoelectronic peptides for the exploration and design of π-conjugated peptides with tunable optoelectronic properties.« less

Coarse-Grained Molecular Simulation of the Hierarchical Self-Assembly of π-Conjugated Optoelectronic Peptides

DOE PAGES

Mansbach, Rachael A.; Ferguson, Andrew L.

2017-02-10

Self-assembled aggregates of peptides containing aromatic groups possess optoelectronic properties that make them attractive targets for the fabrication of biocompatible electronics. Molecular-level understanding of how the microscopic peptide chemistry influences the properties of the aggregates is vital for rational peptide design. We construct a coarse-grained model of Asp-Phe-Ala-Gly-OPV3-Gly-Ala-Phe-Asp (DFAG-OPV3-GAFD) peptides containing OPV3 (distyrylbenzene) π-conjugated cores explicitly parameterized against all-atom calculations and perform molecular dynamics simulations of the self-assembly of hundreds of molecules over hundreds of nanoseconds. We observe a hierarchical assembly mechanism wherein ~2-8 peptides assemble into stacks with aligned aromatic cores that subsequently form elliptical aggregates and ultimately amore » branched network with a fractal dimensionality of ~1.5. The assembly dynamics are well described by a Smoluchowski coagulation process for which we extract rate constants from the molecular simulations to both furnish insight into the microscopic assembly kinetics and extrapolate our aggregation predictions to time and length scales beyond the reach of molecular simulation. Lastly, this study presents new molecular-level understanding of the morphology and dynamics of the spontaneous self-assembly of DFAG-OPV3-GAFD peptides and establishes a systematic protocol to develop coarse-grained models of optoelectronic peptides for the exploration and design of π-conjugated peptides with tunable optoelectronic properties.« less

2D Ruddlesden-Popper Perovskites for Optoelectronics.

PubMed

Chen, Yani; Sun, Yong; Peng, Jiajun; Tang, Junhui; Zheng, Kaibo; Liang, Ziqi

2018-01-01

Conventional 3D organic-inorganic halide perovskites have recently undergone unprecedented rapid development. Yet, their inherent instabilities over moisture, light, and heat remain a crucial challenge prior to the realization of commercialization. By contrast, the emerging 2D Ruddlesden-Popper-type perovskites have recently attracted increasing attention owing to their great environmental stability. However, the research of 2D perovskites is just in their infancy. In comparison to 3D analogues, they are natural quantum wells with a much larger exciton binding energy. Moreover, their inner structural, dielectric, optical, and excitonic properties remain to be largely explored, limiting further applications. This review begins with an introduction to 2D perovskites, along with a detailed comparison to 3D counterparts. Then, a discussion of the organic spacer cation engineering of 2D perovskites is presented. Next, quasi-2D perovskites that fall between 3D and 2D perovskites are reviewed and compared. The unique excitonic properties, electron-phonon coupling, and polarons of 2D perovskites are then be revealed. A range of their (opto)electronic applications is highlighted in each section. Finally, a summary is given, and the strategies toward structural design, growth control, and photophysics studies of 2D perovskites for high-performance electronic devices are rationalized. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Bacteriorhodopsin as an electronic conduction medium for biomolecular electronics.

PubMed

Jin, Yongdong; Honig, Tal; Ron, Izhar; Friedman, Noga; Sheves, Mordechai; Cahen, David

2008-11-01

Interfacing functional proteins with solid supports for device applications is a promising route to possible applications in bio-electronics, -sensors, and -optics. Various possible applications of bacteriorhodopsin (bR) have been explored and reviewed since the discovery of bR. This tutorial review discusses bR as a medium for biomolecular optoelectronics, emphasizing ways in which it can be interfaced, especially as a thin film, solid-state current-carrying electronic element.

Optoelectronic hit/miss transform for screening cervical smear slides

NASA Astrophysics Data System (ADS)

Narayanswamy, R.; Turner, R. M.; McKnight, D. J.; Johnson, K. M.; Sharpe, J. P.

1995-06-01

An optoelectronic morphological processor for detecting regions of interest (abnormal cells) on a cervical smear slide using the hit/miss transform is presented. Computer simulation of the algorithm tested on 184 Pap-smear images provided 95% detection and 5% false alarm. An optoelectronic implementation of the hit/miss transform is presented, along with preliminary experimental results.

Integrated optoelectronic oscillator.

PubMed

Tang, Jian; Hao, Tengfei; Li, Wei; Domenech, David; Baños, Rocio; Muñoz, Pascual; Zhu, Ninghua; Capmany, José; Li, Ming

2018-04-30

With the rapid development of the modern communication systems, radar and wireless services, microwave signal with high-frequency, high-spectral-purity and frequency tunability as well as microwave generator with light weight, compact size, power-efficient and low cost are increasingly demanded. Integrated microwave photonics (IMWP) is regarded as a prospective way to meet these demands by hybridizing the microwave circuits and the photonics circuits on chip. In this article, we propose and experimentally demonstrate an integrated optoelectronic oscillator (IOEO). All of the devices needed in the optoelectronic oscillation loop circuit are monolithically integrated on chip within size of 5×6cm 2 . By tuning the injection current to 44 mA, the output frequency of the proposed IOEO is located at 7.30 GHz with phase noise value of -91 dBc/Hz@1MHz. When the injection current is increased to 65 mA, the output frequency can be changed to 8.87 GHz with phase noise value of -92 dBc/Hz@1MHz. Both of the oscillation frequency can be slightly tuned within 20 MHz around the center oscillation frequency by tuning the injection current. The method about improving the performance of IOEO is carefully discussed at the end of in this article.

Parallel optoelectronic trinary signed-digit division

NASA Astrophysics Data System (ADS)

Alam, Mohammad S.

1999-03-01

The trinary signed-digit (TSD) number system has been found to be very useful for parallel addition and subtraction of any arbitrary length operands in constant time. Using the TSD addition and multiplication modules as the basic building blocks, we develop an efficient algorithm for performing parallel TSD division in constant time. The proposed division technique uses one TSD subtraction and two TSD multiplication steps. An optoelectronic correlator based architecture is suggested for implementation of the proposed TSD division algorithm, which fully exploits the parallelism and high processing speed of optics. An efficient spatial encoding scheme is used to ensure better utilization of space bandwidth product of the spatial light modulators used in the optoelectronic implementation.

Friction laws at the nanoscale.

PubMed

Mo, Yifei; Turner, Kevin T; Szlufarska, Izabela

2009-02-26

Macroscopic laws of friction do not generally apply to nanoscale contacts. Although continuum mechanics models have been predicted to break down at the nanoscale, they continue to be applied for lack of a better theory. An understanding of how friction force depends on applied load and contact area at these scales is essential for the design of miniaturized devices with optimal mechanical performance. Here we use large-scale molecular dynamics simulations with realistic force fields to establish friction laws in dry nanoscale contacts. We show that friction force depends linearly on the number of atoms that chemically interact across the contact. By defining the contact area as being proportional to this number of interacting atoms, we show that the macroscopically observed linear relationship between friction force and contact area can be extended to the nanoscale. Our model predicts that as the adhesion between the contacting surfaces is reduced, a transition takes place from nonlinear to linear dependence of friction force on load. This transition is consistent with the results of several nanoscale friction experiments. We demonstrate that the breakdown of continuum mechanics can be understood as a result of the rough (multi-asperity) nature of the contact, and show that roughness theories of friction can be applied at the nanoscale.

The Properties of Confined Water and Fluid Flow at the Nanoscale

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schwegler, E; Reed, J; Lau, E

This project has been focused on the development of accurate computational tools to study fluids in confined, nanoscale geometries, and the application of these techniques to probe the structural and electronic properties of water confined between hydrophilic and hydrophobic substrates, including the presence of simple ions at the interfaces. In particular, we have used a series of ab-initio molecular dynamics simulations and quantum Monte Carlo calculations to build an understanding of how hydrogen bonding and solvation are modified at the nanoscale. The properties of confined water affect a wide range of scientific and technological problems - including protein folding, cell-membranemore » flow, materials properties in confined media and nanofluidic devices.« less

Nanoscale measurement of Nernst effect in two-dimensional charge density wave material 1T-TaS 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Stephen M.; Luican-Mayer, Adina; Bhattacharya, Anand

Advances in nanoscale material characterization on two-dimensional van der Waals layered materials primarily involve their optical and electronic properties. The thermal properties of these materials are harder to access due to the difficulty of thermal measurements at the nanoscale. In this work, we create a nanoscale magnetothermal device platform to access the basic out-of-plane magnetothermal transport properties of ultrathin van der Waals materials. Specifically, the Nernst effect in the charge density wave transition metal dichalcogenide 1T-TaS 2 is examined on nano-thin flakes in a patterned device structure. It is revealed that near the commensurate charge density wave (CCDW) to nearlymore » commensurate charge density wave (NCCDW) phase transition, the polarity of the Nernst effect changes. Since the Nernst effect is especially sensitive to changes in the Fermi surface, this suggests that large changes are occurring in the out-of-plane electronic structure of 1T-TaS 2, which are otherwise unresolved in just in-plane electronic transport measurements. This may signal a coherent evolution of out-of-plane stacking in the CCDW! NCCDW transition.« less

Optoelectronics of supported and suspended 2D semiconductors

NASA Astrophysics Data System (ADS)

Bolotin, Kirill

2014-03-01

Two-dimensional semiconductors, materials such monolayer molybdenum disulfide (MoS2) are characterized by strong spin-orbit and electron-electron interactions. However, both electronic and optoelectronic properties of these materials are dominated by disorder-related scattering. In this talk, we investigate approaches to reduce scattering and explore physical phenomena arising in intrinsic 2D semiconductors. First, we discuss fabrication of pristine suspended monolayer MoS2 and use photocurrent spectroscopy measurements to study excitons in this material. We observe band-edge and van Hove singularity excitons and estimate their binding energies. Furthermore, we study dissociation of these excitons and uncover the mechanism of their contribution to photoresponse of MoS2. Second, we study strain-induced modification of bandstructures of 2D semiconductors. With increasing strain, we find large and controllable band gap reduction of both single- and bi-layer MoS2. We also detect experimental signatures consistent with strain-induced transition from direct to indirect band gap in monolayer MoS2. Finally, we fabricate heterostructures of dissimilar 2D semiconductors and study their photoresponse. For closely spaced 2D semiconductors we detect charge transfer, while for separation larger than 10nm we observe Forster-like energy transfer between excitations in different layers.

Electronic neuroprocessors

NASA Technical Reports Server (NTRS)

Thakoor, Anil

1991-01-01

The JPL Center for Space Microelectronics Technology (CSMT) is actively pursuing research in the neural network theory, algorithms, and electronics as well as optoelectronic neural net hardware implementations, to explore the strengths and application potential for a variety of NASA, DoD, as well as commercial application problems, where conventional computing techniques are extremely time-consuming, cumbersome, or simply non-existent. An overview of the JPL electronic neural network hardware development activities and some of the striking applications of the JPL electronic neuroprocessors are presented.

Two-Dimensional Optoelectronic Graphene Nanoprobes for Neural Nerwork

NASA Astrophysics Data System (ADS)

Hong, Tu; Kitko, Kristina; Wang, Rui; Zhang, Qi; Xu, Yaqiong

2014-03-01

Brain is the most complex network created by nature, with billions of neurons connected by trillions of synapses through sophisticated wiring patterns and countless modulatory mechanisms. Current methods to study the neuronal process, either by electrophysiology or optical imaging, have significant limitations on throughput and sensitivity. Here, we use graphene, a monolayer of carbon atoms, as a two-dimensional nanoprobe for neural network. Scanning photocurrent measurement is applied to detect the local integration of electrical and chemical signals in mammalian neurons. Such interface between nanoscale electronic device and biological system provides not only ultra-high sensitivity, but also sub-millisecond temporal resolution, owing to the high carrier mobility of graphene.

Fabrication of Single, Vertically Aligned Carbon Nanotubes in 3D Nanoscale Architectures

NASA Technical Reports Server (NTRS)

Kaul, Anupama B.; Megerian, Krikor G.; Von Allmen, Paul A.; Baron, Richard L.

2010-01-01

Plasma-enhanced chemical vapor deposition (PECVD) and high-throughput manufacturing techniques for integrating single, aligned carbon nanotubes (CNTs) into novel 3D nanoscale architectures have been developed. First, the PECVD growth technique ensures excellent alignment of the tubes, since the tubes align in the direction of the electric field in the plasma as they are growing. Second, the tubes generated with this technique are all metallic, so their chirality is predetermined, which is important for electronic applications. Third, a wafer-scale manufacturing process was developed that is high-throughput and low-cost, and yet enables the integration of just single, aligned tubes with nanoscale 3D architectures with unprecedented placement accuracy and does not rely on e-beam lithography. Such techniques should lend themselves to the integration of PECVD grown tubes for applications ranging from interconnects, nanoelectromechanical systems (NEMS), sensors, bioprobes, or other 3D electronic devices. Chemically amplified polyhydroxystyrene-resin-based deep UV resists were used in conjunction with excimer laser-based (lambda = 248 nm) step-and-repeat lithography to form Ni catalyst dots = 300 nm in diameter that nucleated single, vertically aligned tubes with high yield using dc PECVD growth. This is the first time such chemically amplified resists have been used, resulting in the nucleation of single, vertically aligned tubes. In addition, novel 3D nanoscale architectures have been created using topdown techniques that integrate single, vertically aligned tubes. These were enabled by implementing techniques that use deep-UV chemically amplified resists for small-feature-size resolution; optical lithography units that allow unprecedented control over layer-to-layer registration; and ICP (inductively coupled plasma) etching techniques that result in near-vertical, high-aspect-ratio, 3D nanoscale architectures, in conjunction with the use of materials that are

Self-assembly of pi-conjugated peptides in aqueous environments leading to energy-transporting bioelectronic nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tavor, John

The realization of new supramolecular pi-conjugated organic structures inspired and driven by peptide-based self-assembly will offer a new approach to interface with the biotic environment in a way that will help to meet many DOE-recognized grand challenges. Previously, we developed pi-conjugated peptides that undergo supramolecular self-assembly into one-dimensional (1-D) organic electronic nanomaterials under benign aqueous conditions. The intermolecular interactions among the pi-conjugated organic segments within these nanomaterials lead to defined perturbations of their optoelectronic properties and yield nanoscale conduits that support energy transport within individual nanostructures and throughout bulk macroscopic collections of nanomaterials. Our objectives for future research are tomore » construct and study biomimetic electronic materials for energy-related technology optimized for harsher non-biological environments where peptide-driven self-assembly enhances pi-stacking within nanostructured biomaterials, as detailed in the following specific tasks: (1) synthesis and detailed optoelectronic characterization of new pi-electron units to embed within homogeneous self assembling peptides, (2) molecular and data-driven modeling of the nanomaterial aggregates and their higher-order assemblies, and (3) development of new hierarchical assembly paradigms to organize multiple electronic subunits within the nanomaterials leading to heterogeneous electronic properties (i.e. gradients and localized electric fields). These intertwined research tasks will lead to the continued development and fundamental mechanistic understanding of a powerful bioinspired materials set capable of making connections between nanoscale electronic materials and macroscopic bulk interfaces, be they those of a cell, a protein or a device.« less

Two-dimensional non-volatile programmable p-n junctions

NASA Astrophysics Data System (ADS)

Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M.; Zhang, Zengxing

2017-09-01

Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 104 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

Two-dimensional non-volatile programmable p-n junctions.

PubMed

Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M; Zhang, Zengxing

2017-09-01

Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe 2 /hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 10 4 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

Development of optics with micro-LED arrays for improved opto-electronic neural stimulation

NASA Astrophysics Data System (ADS)

Chaudet, Lionel; Neil, Mark; Degenaar, Patrick; Mehran, Kamyar; Berlinguer-Palmini, Rolando; Corbet, Brian; Maaskant, Pleun; Rogerson, David; Lanigan, Peter; Bamberg, Ernst; Roska, Botond

2013-03-01

The breakthrough discovery of a nanoscale optically gated ion channel protein, Channelrhodopsin 2 (ChR2), and its combination with a genetically expressed ion pump, Halorhodopsin, allowed the direct stimulation and inhibition of individual action potentials with light alone. This work reports developments of ultra-bright elec­ tronically controlled optical array sources with enhanced light gated ion channels and pumps for use in systems to further our understanding of both brain and visual function. This work is undertaken as part of the European project, OptoNeuro. Micro-LED arrays permit spatio-temporal control of neuron stimulation on sub-millisecond timescales. However they are disadvantaged by their broad spatial light emission distribution and low fill factor. We present the design and implementation of a projection and micro-optics system for use with a micro-LED array consisting of a 16x16 matrix of 25 μm diameter micro-LEDs with 150 μm centre-to-centre spacing and an emission spectrum centred at 470 nm overlapping the peak sensitivity of ChR2 and its testing on biological samples. The projection system images the micro-LED array onto micro-optics to improve the fill-factor from ~2% to more than 78% by capturing a larger fraction of the LED emission and directing it correctly to the sample plane. This approach allows low fill factor arrays to be used effectively, which in turn has benefits in terms of thermal management and electrical drive from CMOS backplane electronics. The entire projection system is integrated into a microscope prototype to provide stimulation spots at the same size as the neuron cell body (μ10 pm).

Investigating Nanoscale Electrochemistry with Surface- and Tip-Enhanced Raman Spectroscopy.

PubMed

Zaleski, Stephanie; Wilson, Andrew J; Mattei, Michael; Chen, Xu; Goubert, Guillaume; Cardinal, M Fernanda; Willets, Katherine A; Van Duyne, Richard P

2016-09-20

The chemical sensitivity of surface-enhanced Raman spectroscopy (SERS) methodologies allows for the investigation of heterogeneous chemical reactions with high sensitivity. Specifically, SERS methodologies are well-suited to study electron transfer (ET) reactions, which lie at the heart of numerous fundamental processes: electrocatalysis, solar energy conversion, energy storage in batteries, and biological events such as photosynthesis. Heterogeneous ET reactions are commonly monitored by electrochemical methods such as cyclic voltammetry, observing billions of electrochemical events per second. Since the first proof of detecting single molecules by redox cycling, there has been growing interest in examining electrochemistry at the nanoscale and single-molecule levels. Doing so unravels details that would otherwise be obscured by an ensemble experiment. The use of optical spectroscopies, such as SERS, to elucidate nanoscale electrochemical behavior is an attractive alternative to traditional approaches such as scanning electrochemical microscopy (SECM). While techniques such as single-molecule fluorescence or electrogenerated chemiluminescence have been used to optically monitor electrochemical events, SERS methodologies, in particular, have shown great promise for exploring electrochemistry at the nanoscale. SERS is ideally suited to study nanoscale electrochemistry because the Raman-enhancing metallic, nanoscale substrate duly serves as the working electrode material. Moreover, SERS has the ability to directly probe single molecules without redox cycling and can achieve nanoscale spatial resolution in combination with super-resolution or scanning probe microscopies. This Account summarizes the latest progress from the Van Duyne and Willets groups toward understanding nanoelectrochemistry using Raman spectroscopic methodologies. The first half of this Account highlights three techniques that have been recently used to probe few- or single-molecule electrochemical

Modeling and Simulation for Particle Radiation Damage to Electronic and Opto-Electronic Devices

DTIC Science & Technology

2018-01-25

AFRL-RV-PS- AFRL-RV-PS- TR-2018-0001 TR-2018-0001 MODELING & SIMULATION FOR PARTICLE RADIATION DAMAGE TO ELECTRONIC AND OPTO- ELECTRONIC DEVICES... Electronic and Opto- Electronic Devices 5a. CONTRACT NUMBER FA9453-14-1-0248 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 62601F 6. AUTHOR(S) Sanjay...nBp Diode Assuming the light is incident on the n-side of the photodiode, the drift-diffusion equation for the minority electron of the p-type

Effects of Loading Frequency and Film Thickness on the Mechanical Behavior of Nanoscale TiN Film

NASA Astrophysics Data System (ADS)

Liu, Jin-na; Xu, Bin-shi; Wang, Hai-dou; Cui, Xiu-fang; Jin, Guo; Xing, Zhi-guo

2017-09-01

The mechanical properties of a nanoscale-thickness film material determine its reliability and service life. To achieve quantitative detection of film material mechanical performance based on nanoscale mechanical testing methods and to explore the influence of loading frequency of the cycle load on the fatigue test, a TiN film was prepared on monocrystalline silicon by magnetron sputtering. The microstructure of the nanoscale-thickness film material was characterized by using scanning electron microscopy and high-resolution transmission electron microscopy. The residual stress distribution of the thin film was obtained by using an electronic film stress tester. The hardness values and the fatigue behavior were measured by using a nanomechanical tester. Combined with finite element simulation, the paper analyzed the influence of the film thickness and loading frequency on the deformation, as well as the equivalent stress and strain. The results showed that the TiN film was a typical face-centered cubic structure with a large amount of amorphous. The residual compressive stress decreased gradually with increasing thin film thickness, and the influence of the substrate on the elastic modulus and hardness was also reduced. A greater load frequency would accelerate the dynamic fatigue damage that occurs in TiN films.

Magnetic Interactions at the Nanoscale in Trilayer Titanates

NASA Astrophysics Data System (ADS)

Cao, Yanwei; Yang, Zhenzhong; Kareev, M.; Liu, Xiaoran; Meyers, D.; Middey, S.; Choudhury, D.; Shafer, P.; Guo, Jiandong; Freeland, J. W.; Arenholz, E.; Gu, Lin; Chakhalian, J.

2016-02-01

We report on the phase diagram of competing magnetic interactions at the nanoscale in engineered ultrathin trilayer heterostructures of LaTiO3 /SrTiO3/YTiO3 , in which the interfacial inversion symmetry is explicitly broken. Combined atomic layer resolved scanning transmission electron microscopy with electron energy loss spectroscopy and electrical transport have confirmed the formation of a spatially separated two-dimensional electron liquid and high density two-dimensional localized magnetic moments at the LaTiO3 /SrTiO3 and SrTiO3 /YTiO3 interfaces, respectively. Resonant soft x-ray linear dichroism spectroscopy has demonstrated the presence of orbital polarization of the conductive LaTiO3 /SrTiO3 and localized SrTiO3 /YTiO3 electrons. Our results provide a route with prospects for exploring new magnetic interfaces, designing a tunable two-dimensional d -electron Kondo lattice, and potential spin Hall applications.

Magnetic Interactions at the Nanoscale in Trilayer Titanates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Yanwei; Yang, Zhenzhong; Kareev, M.

2016-02-17

We report on the phase diagram of competing magnetic interactions at the nanoscale in engineered ultrathin trilayer heterostructures of LaTiO3/SrTiO3/YTiO3, in which the interfacial inversion symmetry is explicitly broken. Combined atomic layer resolved scanning transmission electron microscopy with electron energy loss spectroscopy and electrical transport have confirmed the formation of a spatially separated two-dimensional electron liquid and high density two-dimensional localized magnetic moments at the LaTiO3/SrTiO3 and SrTiO3/YTiO3 interfaces, respectively. Resonant soft x-ray linear dichroism spectroscopy has demonstrated the presence of orbital polarization of the conductive LaTiO3/SrTiO3 and localized SrTiO3/YTiO3 electrons. Our results provide a route with prospects for exploringmore » new magnetic interfaces, designing a tunable two-dimensional d-electron Kondo lattice, and potential spin Hall applications.« less

Comprehensive study of the influence of different environments on degradation processes in F8BT: Correlating optoelectronic properties with Raman measurements

NASA Astrophysics Data System (ADS)

Linde, Sivan; Shikler, Rafi

2013-10-01

There is a growing interest in conjugated polymers from both industrial and academic points of views. The reasons are their tunable optoelectronic properties, ease of production, and excellent mechanical properties. However, the ease with which their optoelectronic properties are tunable make devices based on them prone to fast degradation and therefore, short life time. The issue of degradation of organic based optoelectronic devices is the topic of many ongoing researches. However, much less attention is given to degradation processes of the individual components of the devices and their dependence on the environmental conditions. In this work, we report on the degradation of a film of a polyfluorene block copolymer F8BT that is used in a variety of optoelectronic devices under different environments: Sun exposure, heating, and UV exposure in inert and ambient conditions. Degradation was observed in most of the optoelectronic properties of the film. Topographic measurements did not show observable changes of the film morphology following degradation. However, Raman spectroscopy measurements show changes that indicate degradation in one of the building blocks of the copolymer that is associated with electron's conduction. The absolute value of the correlation coefficient between the decrease in the Raman signal and the decrease in the optoelectronic properties is larger than 0.95 under sun exposure it is larger than 0.8 under all other ambient exposures and smaller than 0.65 under inert conditions. These results support the assumption that Oxygen, not necessarily through photo-oxidation, and also water play an important role in the degradation process and indicate the part of the polymer that is most susceptible to degradation.

Simultaneous thermoelectric and optoelectronic characterization of individual nanowires

DOE PAGES

Leonard, Francois; Wang, George T.; Swartzentruber, Brian S.; ...

2015-11-03

Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrentmore » observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Furthermore, our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.« less

Simultaneous Thermoelectric and Optoelectronic Characterization of Individual Nanowires.

PubMed

Léonard, François; Song, Erdong; Li, Qiming; Swartzentruber, Brian; Martinez, Julio A; Wang, George T

2015-12-09

Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrent observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.

Optoelectronic characteristics of MEH-PPV + BT blend thin films in polymer light emitting diodes

NASA Astrophysics Data System (ADS)

Massah Bidgoli, M.; Mohsennia, M.; Akbari Boroumand, F.; Mohsen Nia, A.

2015-06-01

Due to the unique optical and electronic properties of conjugated polymers, much research has been conducted to study the effect of the incorporation of electron-transporting materials on the polymer blends’ compatibility and their capability for use in optoelectronic devices. In this work, to characterize the optoelectronic properties of blend thin films of poly [2-methoxy-5-(2’-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) with benzothiadiazole (BT), polymer light- emitting diodes (PLEDs) with single-emission layers of MEH-PPV + BT blends have been fabricated. The influence of MEH-PPV + BT blend weight ratios over ITO/PEDOT:PSS/MEH-PPV + BT/Al PLEDs performances, e.g., lifetime, turn-on voltage, and current density-voltage (J-V) characteristics, has been studied. According to the obtained results, the turn-on voltage of the devices successfully decreased with the addition of the BT as an electronic transportation material. At an optimum condition, we obtained a turn-on voltage as low as 5 V and a lifetime of about 190 h for a device incorporating 65% BT. The logarithmic plots of the J-V characteristics of the fabricated devices showed a power law behavior (J ∝ Vk+1) with three distinct regions. The J-V characteristics have been explained by the Fowler-Nordheim (FN) tunneling model. It was found that the hole-injection barrier height decreases with increasing BT content in the range of 0-65%. According to the obtained results, in all of our investigations, the electroluminescence (EL) originated exclusively from the MEH-PPV material, even for the high BT contents.

Nanoscale wear as a stress-assisted chemical reaction

NASA Astrophysics Data System (ADS)

Jacobs, Tevis D. B.; Carpick, Robert W.

2013-02-01

Wear of sliding contacts leads to energy dissipation and device failure, resulting in massive economic and environmental costs. Typically, wear phenomena are described empirically, because physical and chemical interactions at sliding interfaces are not fully understood at any length scale. Fundamental insights from individual nanoscale contacts are crucial for understanding wear at larger length scales, and to enable reliable nanoscale devices, manufacturing and microscopy. Observable nanoscale wear mechanisms include fracture and plastic deformation, but recent experiments and models propose another mechanism: wear via atom-by-atom removal (`atomic attrition'), which can be modelled using stress-assisted chemical reaction kinetics. Experimental evidence for this has so far been inferential. Here, we quantitatively measure the wear of silicon--a material relevant to small-scale devices--using in situ transmission electron microscopy. We resolve worn volumes as small as 25 +/- 5 nm3, a factor of 103 lower than is achievable using alternative techniques. Wear of silicon against diamond is consistent with atomic attrition, and inconsistent with fracture or plastic deformation, as shown using direct imaging. The rate of atom removal depends exponentially on stress in the contact, as predicted by chemical rate kinetics. Measured activation parameters are consistent with an atom-by-atom process. These results, by direct observation, establish atomic attrition as the primary wear mechanism of silicon in vacuum at low loads.

Nanoscale Devices for Solid State Refrigeration and Power Generation

DTIC Science & Technology

2004-01-01

techniques such as ballistic electron emission microscopy, scanning thermal microscopy, X - ray photoelectron emission spectroscopy, etc. The main emphasis is...0-7803-8363- X /04/$20.00 ©2004 IEEE 20th IEEE SEMI-THERM Symposium Nanoscale Devices for Solid State Refrigeration and Power Generation Ali...theories [9,23,24]. Since thermal conductivity is an average bulk effect involving many lattice vibrations (phonons modes), it is hard to

Nanoscale magnetic imaging with a single nitrogen-vacancy center in diamond

NASA Astrophysics Data System (ADS)

Hong, Sungkun

Magnetic imaging has been playing central roles not only in fundamental sciences but also in engineering and industry. Their numerous applications can be found in various areas, ranging from chemical analysis and biomedical imaging to magnetic data storage technology. An outstanding problem is to develop new magnetic imaging techniques with improved spatial resolutions down to nanoscale, while maintaining their magnetic sensitivities. For instance, if detecting individual electron or nuclear spins with nanomter spatial resolution is possible, it would allow for direct imaging of chemical structures of complex molecules, which then could bring termendous impacts on biological sciences. While realization of such nanoscale magnetic imaging still remains challenging, nitrogen-vacancy (NV) defects in diamond have recently considered as promising magnetic field sensors, as their electron spins show exceptionally long coherence even at room temperature. This thesis presents experimental progress in realizing a nanoscale magnetic imaging apparatus with a single nitrogen-vacancy (NV) color center diamond. We first fabricated diamond nanopillar devices hosting single NV centers at their ends, and incorporated them to a custom-built atomic force microscope (AFM). Our devices showed unprecedented combination of magnetic field sensitivity and spatial resolution for scanning NV systems. We then used these devices to magnetically image a single isolated electronic spin with nanometer resolution, for the first time under ambient condition. We also extended our study to improve and generalize the application of the scanning NV magnetometer we developed. We first introduced magnetic field gradients from a strongly magnetized tip, and demonstrated that the spatial resolution can be further improved by spectrally distinguishing identical spins at different locations. In addition, we developed a method to synchronize the periodic motion of an AFM tip and pulsed microwave sequences

Fiber Bragg grating fabrication for the implementation of sensors in the electronics and optoelectronics laboratory at BUAP

NASA Astrophysics Data System (ADS)

Bracamontes Rodríguez, Y. E.; Beltrán Pérez, G.; Castillo Mixcóatl, J.; Muñoz Aguirre, S.

2011-09-01

Fiber Bragg gratings (FBG) are important optical devices since they have been quite successful not only in the field of communications but also in sensor systems and optical fiber lasers. In the sensors area they are generally used as detection elements for different physical parameters such as temperature, strain, flow, etc. In the electronics and optoelectronics laboratory at Benemérita Universidad Autónoma de Puebla (LEyO-BUAP), there are already experimental setups of sensors as well as laser systems, where FBGs are fundamental elements for their adequate performance. However, these FBGs are commercial devices and they present limited characteristics in their transmission profiles, bandwidth and reflectivity. On the other hand, in some occasions, the delivery time from the fabricant to the customer is quite long. Therefore, it is important for LEyO to implement a system to fabricate this kind of devices, which would mean LEyO independence in the technological development. In this work, results of FBGs fabrication based on the phase mask technique are presented. Such mask is optimized for UV and it has a period of 1060 nm. A Nd:YAG pulsed laser with a 5 ns pulse length and an energy of 40 mJ was used as the UV source employing the 4th harmonic generation to obtain a 266 nm wavelength. Ge-doped fiber was used to fabricate the devices.

A Novel Optoelectronic Device Based on Correlated Two-Dimensional Fermions

NASA Astrophysics Data System (ADS)

Dianat, Pouya

Conventional metallic contacts can be replicated by quantum two dimensional charge (of Fermion) systems (2DFS). Unlike metals, the particle concentration of these "unconventional" systems can be accurately controlled in an extensive range and by means of external electronic or optical stimuli. A 2DFS can, hence, transition from a high-density kinetic liquid into a dilute-but highly correlated-gas state, in which inter-particle Coulombic interactions are significant. Such interactions contribute negatively, by so-called exchange-correlation energies, to the overall energetics of the system, and are manifested as a series negative quantum capacitance. This dissertation investigates the capacitive performance of a class of unconventional devices based on a planar metal-semiconductor-metal structure with an embedded 2DFS. They constitute an opto-electronically controlled variable capacitor, with record breaking figures-of-merit in capacitance tuning ranges of up to 7000 and voltage sensitivities as large as 400. Internal eld manipulations by localized depletion of a dense 2DFS account for the enlarged maximum and reduced minimum capacitances. The capacitance-voltage characteristics of these devices incur an anomalous "Batman" shape capacitance enhancement (CE) of up to 200% that may be triggered optically. The CE is attributed to the release and storage of exchange-correlation energies; from the "unconventional" plate and in the dielectric, respectively. This process is enforced by density manipulation of the 2DFS by a hybrid of an external eld and light-generated carriers. Under moderate optical powers, the capacitance becomes 43 times greater than the dark value; thus a new capacitance-based photodetection method is offered. This new capacitance based photodetection method has a range of applications in optoelectronics, particularly in the next generation of photonic integrated systems.

Scanning tunneling microscopy studies of diamond films and optoelectronic materials

NASA Technical Reports Server (NTRS)

Perez, Jose M.

1993-01-01

In this report, we report on progress achieved from 12/1/92 to 10/1/93 under the grant entitled 'Scanning Tunneling Microscopy Studies of Diamond Films and Optoelectronic Materials'. We have set-up a chemical vapor deposition (CVD) diamond film growth system and a Raman spectroscopy system to study the nucleation and growth of diamond films with atomic resolution using scanning tunneling microscopy (STM). A unique feature of the diamond film growth system is that diamond films can be transferred directly to the ultrahigh vacuum (UHV) chamber of a scanning tunneling microscope without contaminating the films by exposure to air. The University of North Texas (UNT) provided $20,000 this year as matching funds for the NASA grant to purchase the diamond growth system. In addition, UNT provided a Coherent Innova 90S Argon ion laser, a Spex 1404 double spectrometer, and a Newport optical table costing $90,000 to set-up the Raman spectroscopy system. The CVD diamond growth system and Raman spectroscopy system will be used to grow and characterize diamond films with atomic resolution using STM as described in our proposal. One full-time graduate student and one full-time undergraduate student are supported under this grant. In addition, several graduate and undergraduate students were supported during the summer to assist in setting-up the diamond growth and Raman spectroscopy systems. We have obtained research results concerning STM of the structural and electronic properties of CVD grown diamond films, and STM and scanning tunneling spectroscopy of carbon nanotubes. In collaboration with the transmission electron microscopy (TEM) group at UNT, we have also obtained results concerning the optoelectronic material siloxene. These results were published in refereed scientific journals, submitted for publication, and presented as invited and contributed talks at scientific conferences.

An evaluation method for nanoscale wrinkle

NASA Astrophysics Data System (ADS)

Liu, Y. P.; Wang, C. G.; Zhang, L. M.; Tan, H. F.

2016-06-01

In this paper, a spectrum-based wrinkling analysis method via two-dimensional Fourier transformation is proposed aiming to solve the difficulty of nanoscale wrinkle evaluation. It evaluates the wrinkle characteristics including wrinkling wavelength and direction simply using a single wrinkling image. Based on this method, the evaluation results of nanoscale wrinkle characteristics show agreement with the open experimental results within an error of 6%. It is also verified to be appropriate for the macro wrinkle evaluation without scale limitations. The spectrum-based wrinkling analysis is an effective method for nanoscale evaluation, which contributes to reveal the mechanism of nanoscale wrinkling.

Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics.

PubMed

Jariwala, Deep; Davoyan, Artur R; Tagliabue, Giulia; Sherrott, Michelle C; Wong, Joeson; Atwater, Harry A

2016-09-14

We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.

Enhanced electronic excitation energy transfer between dye molecules incorporated in nano-scale media with apparent fractal dimensionality

NASA Astrophysics Data System (ADS)

Yefimova, Svetlana L.; Rekalo, Andrey M.; Gnap, Bogdan A.; Viagin, Oleg G.; Sorokin, Alexander V.; Malyukin, Yuri V.

2014-09-01

In the present study, we analyze the efficiency of Electronic Excitation Energy Transfer (EEET) between two dyes, an energy donor (D) and acceptor (A), concentrated in structurally heterogeneous media (surfactant micelles, liposomes, and porous SiO2 matrices). In all three cases, highly effective EEET in pairs of dyes has been found and cannot be explained by Standard Förster-type theory for homogeneous solutions. Two independent approaches based on the analysis of either the D relative quantum yield () or the D fluorescence decay have been used to study the deviation of experimental results from the theoretical description of EEET process. The observed deviation is quantified by the apparent fractal distribution of molecules parameter . We conclude that the highly effective EEET observed in the nano-scale media under study can be explained by both forced concentration of the hydrophobic dyes within nano-volumes and non-uniform cluster-like character of the distribution of D and A dye molecules within nano-volumes.

2.49 GHz low phase-noise optoelectronic oscillator using 1.55μm VCSEL for avionics and aerospace applications

NASA Astrophysics Data System (ADS)

Hayat, Ahmad; Bacou, Alexandre; Rissons, Angelique; Mollier, Jean-Claude

2009-02-01

We present here a 1.55 μm single mode Vertical-Cavity Surface-Emitting Laser (VCSEL) based low phasenoise ring optoelectronic (OEO) oscillator operating at 2.49 GHz for aerospace, avionics and embedded systems applications. Experiments using optical fibers of different lengths have been carried out to obtain optimal results. A phase-noise measurement of -107 dBc/Hz at an offset of 10 kHz from the carrier is obtained. A 3-dB linewidth of 16 Hz for this oscillator signal has been measured. An analysis of lateral mode spacing or Free Spectral Range (FSR) as a function of fiber length has been carried out. A parametric comparison with DFB Laser-based and multimode VCSEL-based opto-electronic oscillators is also presented.

Size-Dependent Optoelectronic Properties and Controlled Doping of Semiconductor Quantum Dots

NASA Astrophysics Data System (ADS)

Engel, Jesse Hart

Given a rapidly developing world, the need exists for inexpensive renewable energy alternatives to help avoid drastic climate change. Photovoltaics have the potential to fill the energy needs of the future, but significant cost decreases are necessary for widespread adoption. Semiconductor nanocrystals, also known as quantum dots, are a nascent technology with long term potential to enable inexpensive and high efficiency photovoltaics. When deposited as a film, quantum dots form unique nanocomposites whose electronic and optical properties can be broadly tuned through manipulation of their individual constituents. The contents of this thesis explore methods to understand and optimize the optoelectronic properties of PbSe quantum dot films for use in photovoltaic applications. Systematic optimization of photovoltaic performance is demonstrated as a function of nanocrystal size, establishing the potential for utilizing extreme quantum confinement to improve device energetics and alignment. Detailed investigations of the mechanisms of electrical transport are performed, revealing that electronic coupling in quantum dot films is significantly less than often assumed based on optical shifts. A method is proposed to employ extended regions of built-in electrical field, through controlled doping, to sidestep issues of poor transport. To this end, treatments with chemical redox agents are found to effect profound and reversible doping within nanocrystal films, sufficient to enable their use as chemical sensors, but lacking the precision required for optoelectronic applications. Finally, a novel doping method employing "redox buffers" is presented to enact precise, stable, and reversible charge-transfer doping in porous semiconductor films. An example of oxidatively doping PbSe quantum dot thin films is presented, and the future potential for redox buffers in photovoltaic applications is examined.

Endocytosis of Nanoscale Systems for Cancer Treatments.

PubMed

Chen, Kai; Li, Xue; Zhu, Hongyan; Gong, Qiyong; Luo, Kui

2017-04-28

Advances of nanoscale systems for cancer treatment have been involved in enabling highly regulated site-specific localization to sub cellular organelles hidden beneath cell membranes. Thus far, the cellular entry of these nanoscale systems has been not fully understood. Endocytosisis a form of active transport in which cell transports elected extracellular molecules (such as proteins, viruses, micro-organisms and nanoscale systems) are allowed into cell interiors by engulfing them in an energy-dependent process. This process appears at the plasma membrane surface and contains internalization of the cell membrane as well as the membrane proteins and lipids of cell. There are multiform pathways of endocytosis for nanoscale systems. Further comprehension for the mechanisms of endocytosis is achieved with a combination of efficient genetic manipulations, cell dynamic imaging, and chemical endocytosis inhibitors. This review provides an account of various endocytic pathways, itemizes current methods to study endocytosis of nanoscale systems, discusses some factors associated with cellular uptake for nanoscale systems and introduces the trafficking behavior for nanoscale systems with active targeting. An insight into the endocytosis mechanism is urgent and significant for developing safe and efficient nanoscale systems for cancer diagnosis and therapy. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

Plasmon 3D Electron Tomography and Local Electric-Field Enhancement of Engineered Plasmonic Nanoantennas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Archanjo, B. S.; Vasconcelos, T. L.; Oliveira, B. S.

Plasmonic nano-antennas are pushing the limits of optical imaging resolution capabilities in near-field scanning optical microscopy (NSOM). Accordingly, these techniques are driving the basic understanding of photonic and optoelectronic nanoscale devices with applications in sensing, energy conversion, solid-state lighting and information technology. Imaging the localized surface plasmon resonance (LSPR) at the nanoscale is a key to understanding the optical responses of a given tip geometry in order to engineer better plasmonic nano-antennas for near-field experiments. In recent years the advancement of focused ion beam technology provides the ability to directly modify plasmonic structures with nanometer resolution. Also, scanning transmission electronmore » microscopy (STEM) with electron energy loss spectroscopy (EELS) is an established technique allowing imaging of LSPR. Specifically, the combination of these two techniques provides spectrally sensitive two-dimensional (2D) imaging information to better visualize and understand LSPR on the nanometer scale. This can be combined with electron tomography to provide the three-dimensional LSPR distribution. Here in this paper we demonstrate the fabrication of Au nano-pyramids using helium ion microscopy, and analyze the LSPR in 3D reconstructions produced by total variation (TV)-norm minimization of a set of 2D STEM-EELS maps. Additionally, a boundary element simulation method was used to verify the experimentally observed nanopyramid LSPR modes. Finally, we show that the point-spread-functions (PSF) of LSPR mode hot spots in nanopyramids differ to local electric-field enhancement under optical excitation making direct comparison to NSOM experimental resolution difficult. However, the STEM-EELS results show how LSPR modes are influenced by the tip characteristics, which can inform the development of new nano-antenna designs.« less

Plasmon 3D Electron Tomography and Local Electric-Field Enhancement of Engineered Plasmonic Nanoantennas

DOE PAGES

Archanjo, B. S.; Vasconcelos, T. L.; Oliveira, B. S.; ...

2018-06-01

Plasmonic nano-antennas are pushing the limits of optical imaging resolution capabilities in near-field scanning optical microscopy (NSOM). Accordingly, these techniques are driving the basic understanding of photonic and optoelectronic nanoscale devices with applications in sensing, energy conversion, solid-state lighting and information technology. Imaging the localized surface plasmon resonance (LSPR) at the nanoscale is a key to understanding the optical responses of a given tip geometry in order to engineer better plasmonic nano-antennas for near-field experiments. In recent years the advancement of focused ion beam technology provides the ability to directly modify plasmonic structures with nanometer resolution. Also, scanning transmission electronmore » microscopy (STEM) with electron energy loss spectroscopy (EELS) is an established technique allowing imaging of LSPR. Specifically, the combination of these two techniques provides spectrally sensitive two-dimensional (2D) imaging information to better visualize and understand LSPR on the nanometer scale. This can be combined with electron tomography to provide the three-dimensional LSPR distribution. Here in this paper we demonstrate the fabrication of Au nano-pyramids using helium ion microscopy, and analyze the LSPR in 3D reconstructions produced by total variation (TV)-norm minimization of a set of 2D STEM-EELS maps. Additionally, a boundary element simulation method was used to verify the experimentally observed nanopyramid LSPR modes. Finally, we show that the point-spread-functions (PSF) of LSPR mode hot spots in nanopyramids differ to local electric-field enhancement under optical excitation making direct comparison to NSOM experimental resolution difficult. However, the STEM-EELS results show how LSPR modes are influenced by the tip characteristics, which can inform the development of new nano-antenna designs.« less

Preparation of nearly monodisperse nanoscale inorganic pigments.

PubMed

Wang, Dingsheng; Liang, Xin; Li, Yadong

2006-07-17

Many different important commercial pigments have been synthesized based on the liquid-solid-solution (LSS) phase-transfer and separation process. Transmission electron microscopy (TEM) measurement results show that they are very small in size and have a narrow size distribution. Visible absorption spectra were taken to examine the very pure and brilliant colors of the pigments. They can be well-dispersed in cyclohexane and remain non-agglomerated, even over several months. These nearly monodisperse nanoscale inorganic pigments may have wide applications in many important fields and could bring about new developments in the pigment industry.

Nanoscale capillary freezing of ionic liquids confined between metallic interfaces and the role of electronic screening

PubMed Central

Comtet, Jean; Niguès, Antoine; Kaiser, Vojtech; Coasne, Benoit; Bocquet, Lydéric; Siria, Alessandro

2017-01-01

Room temperature Ionic liquids (RTIL) are new materials with fundamental importance for energy storage and active lubrication. They are unsual liquids, which challenge the classical frameworks of electrolytes, whose behavior at electrified interfaces remains elusive with exotic responses relevant to their electrochemical activity. By means of tuning fork based AFM nanorheological measurements, we explore here the properties of confined RTIL, unveiling a dramatic change of the RTIL towards a solid-like phase below a threshold thickness, pointing to capillary freezing in confinement. This threshold is related to the metallic nature of the confining materials, with more metallic surfaces facilitating freezing. This is interpreted in terms of the shift of freezing transition, taking into account the influence of the electronic screening on RTIL wetting of the confining surfaces. Our findings provide fresh views on the properties of confined RTIL with implications for their properties inside nanoporous metallic structures and suggests applications to tune nanoscale lubrication with phase-changing RTIL, by varying the nature and patterning of the substrate, and application of active polarisation. PMID:28346432

Nanoscale capillary freezing of ionic liquids confined between metallic interfaces and the role of electronic screening

NASA Astrophysics Data System (ADS)

Comtet, Jean; Niguès, Antoine; Kaiser, Vojtech; Coasne, Benoit; Bocquet, Lydéric; Siria, Alessandro

2017-06-01

Room-temperature ionic liquids (RTILs) are new materials with fundamental importance for energy storage and active lubrication. They are unusual liquids, which challenge the classical frameworks of electrolytes, whose behaviour at electrified interfaces remains elusive, with exotic responses relevant to their electrochemical activity. Using tuning-fork-based atomic force microscope nanorheological measurements, we explore here the properties of confined RTILs, unveiling a dramatic change of the RTIL towards a solid-like phase below a threshold thickness, pointing to capillary freezing in confinement. This threshold is related to the metallic nature of the confining materials, with more metallic surfaces facilitating freezing. This behaviour is interpreted in terms of the shift of the freezing transition, taking into account the influence of the electronic screening on RTIL wetting of the confining surfaces. Our findings provide fresh views on the properties of confined RTIL with implications for their properties inside nanoporous metallic structures, and suggests applications to tune nanoscale lubrication with phase-changing RTILs, by varying the nature and patterning of the substrate, and application of active polarization.

Nanoscale capillary freezing of ionic liquids confined between metallic interfaces and the role of electronic screening.

PubMed