Investigation of the fracture mechanics of boride composites

NASA Technical Reports Server (NTRS)

Kaufman, L.; Clougherty, E. V.; Nesor, H.

1971-01-01

Fracture energies of WC-6Co, Boride 5 (ZrB2+SiC), Boride 8(ZrB2+SiC+C) and Boride 8-M2(ZrB2+SiC+C) were measured by slow bend and impact tests of notched charpy bars. Cobalt bonded tungsten carbide exhibited impact energies of 0.76 ft-lb or 73.9 in-lb/square inch. Boride 5 and the Boride 8 exhibit impact energies one third and one quarter of that observed for WC-6Co comparing favorably with measurements for SiC and Si3N4. Slow bend-notched bar-fracture energies for WC-6Co were near 2.6 in-lb/square inch or 1/20 the impact energies. Slow bend energies for Boride 8-M2, Boride 8 and Boride 5 were 58%, 42% and 25% of the value observed for WC-6Co. Fractograph showed differences for WC-6Co where slow bend testing resulted in smooth transgranular cleavage while samples broken by impact exhibited intergranular failures. By contrast the boride fractures showed no distinction based on testing method. Fabrication studies were conducted to effect alteration of the boride composites by alloying and introduction of graphite cloth.

Characterization of AISI 4140 borided steels

NASA Astrophysics Data System (ADS)

Campos-Silva, I.; Ortiz-Domínguez, M.; López-Perrusquia, N.; Meneses-Amador, A.; Escobar-Galindo, R.; Martínez-Trinidad, J.

2010-02-01

The present study characterizes the surface of AISI 4140 steels exposed to the paste-boriding process. The formation of Fe 2B hard coatings was obtained in the temperature range 1123-1273 K with different exposure times, using a 4 mm thick layer of boron carbide paste over the material surface. First, the growth kinetics of boride layers at the surface of AISI 4140 steels was evaluated. Second, the presence and distribution of alloying elements on the Fe 2B phase was measured using the Glow Discharge Optical Emission Spectrometry (GDOES) technique. Further, thermal residual stresses produced on the borided phase were evaluated by X-ray diffraction (XRD) analysis. The fracture toughness of the iron boride layer of the AISI 4140 borided steels was estimated using a Vickers microindentation induced-fracture testing at a constant distance of 25 μm from the surface. The force criterion of fracture toughness was determined from the extent of brittle cracks, both parallel and perpendicular to the surface, originating at the tips of an indenter impression. The fracture toughness values obtained by the Palmqvist crack model are expressed in the form KC( π/2) > KC > KC(0) for the different applied loads and experimental parameters of the boriding process.

An Evaluation of a Borided Layer Formed on Ti-6Al-4V Alloy by Means of SMAT and Low-Temperature Boriding

PubMed Central

Yao, Quantong; Sun, Jian; Fu, Yuzhu; Tong, Weiping; Zhang, Hui

2016-01-01

In this paper, a nanocrystalline surface layer without impurities was fabricated on Ti-6Al-4V alloy by means of surface mechanical attrition treatment (SMAT). The grain size in the nanocrystalline layer is about 10 nm and grain morphology displays a random crystallographic orientation distribution. Subsequently, the low-temperature boriding behaviors (at 600 °C) of the SMAT sample, including the phase composition, microstructure, micro-hardness, and brittleness, were investigated in comparison with those of coarse-grained sample borided at 1100 °C. The results showed that the boriding kinetics could be significantly enhanced by SMAT, resulting in the formation of a nano-structured boride layers on Ti-6Al-4V alloy at lower temperature. Compared to the coarse-grained boriding sample, the SMAT boriding sample exhibits a similar hardness value, but improved surface toughness. The satisfactory surface toughness may be attributed to the boriding treatment that was carried out at lower temperature. PMID:28774115

Methods of repairing a substrate

NASA Technical Reports Server (NTRS)

Riedell, James A. (Inventor); Easler, Timothy E. (Inventor)

2011-01-01

A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium boride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive.

Ultra-fast boriding of metal surfaces for improved properties

DOEpatents

Timur, Servet; Kartal, Guldem; Eryilmaz, Osman L.; Erdemir, Ali

2015-02-10

A method of ultra-fast boriding of a metal surface. The method includes the step of providing a metal component, providing a molten electrolyte having boron components therein, providing an electrochemical boriding system including an induction furnace, operating the induction furnace to establish a high temperature for the molten electrolyte, and boriding the metal surface to achieve a boride layer on the metal surface.

The fracture toughness of borides formed on boronized cold work tool steels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sen, Ugur; Sen, Saduman

2003-06-15

In this study, the fracture toughness of boride layers of two borided cold work tool steels have been investigated. Boriding was carried out in a salt bath consisting of borax, boric acid, ferro-silicon and aluminum. Boriding was performed at 850 and 950 deg. C for 2 to 7 h. The presence of boride phases were determined by X-ray diffraction (XRD) analysis. Hardness and fracture toughness of borides were measured via Vickers indenter. Increasing of boriding time and temperature leads to reduction of fracture toughness of borides. Metallographic examination showed that boride layer formed on cold work tool steels was compactmore » and smooth.« less

Field free, directly heated lanthanum boride cathode

DOEpatents

Leung, Ka-Ngo; Moussa, D.; Wilde, S.B.

1987-02-02

A directly heated cylindrical lanthanum boride cathode assembly is disclosed which minimizes generation of magnetic field which would interfere with electron emission from the cathode. The cathode assembly comprises a lanthanum boride cylinder in electrical contact at one end with a central support shaft which functions as one electrode to carry current to the lanthanum boride cylinder and in electrical contact, at its opposite end with a second electrode which is coaxially position around the central support shaft so that magnetic fields generated by heater current flowing in one direction through the central support shaft are cancelled by an opposite magnetic field generated by current flowing through the lanthanum boride cylinder and the coaxial electrode in a direction opposite to the current flow in the central shaft.

Future Directions for Selected Topics in Physics and Materials Science

DTIC Science & Technology

2012-07-12

referred to as lightides (e.g. borides , nitrides, phosphides) • Materials for energy conversion, energy storage, energy transport and energy production...Distributed nanosystems and sensors • Strategy for multilayered combinatorics • lightides ( borides , nitrides, phosphides, • New applications for...Strategy for multilayered combinatorics Lightides ( borides , nitrides, phosphides) • Energy conversion, .storage and production • Precision control

Ceramic material suitable for repair of a space vehicle component in a microgravity and vacuum environment, method of making same, and method of repairing a space vehicle component

NASA Technical Reports Server (NTRS)

Riedell, James A. (Inventor); Easler, Timothy E. (Inventor)

2009-01-01

A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium diboride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive.

Designing nanoscale constructs from atomic thin sheets of graphene, boron nitride and gold nanoparticles for advanced material applications

NASA Astrophysics Data System (ADS)

Jasuja, Kabeer

2011-12-01

Nanoscale materials invite immense interest from diverse scientific disciplines as these provide access to precisely understand the physical world at their most fundamental atomic level. In concert with this aim of enhancing our understanding of the fundamental behavior at nanoscale, this dissertation presents research on three nanomaterials: Gold nanoparticles (GNPs), Graphene and ultra-thin Boron Nitride sheets (UTBNSs). The three-fold goals which drive this research are: incorporating mobility in nanoparticle based single-electron junction constructs, developing effective strategies to functionalize graphene with nano-forms of metal, and exfoliating ultrathin sheets of Boron Nitride. Gold nanoparticle based electronic constructs can achieve a new degree of operational freedom if nanoscale mobility is incorporated in their design. We achieved such a nano-electromechanical construct by incorporating elastic polymer molecules between GNPs to form 2-dimensional (2-D) molecular junctions which show a nanoscale reversible motion on applying macro scale forces. This GNP-polymer assembly works like a molecular spring opening avenues to maneuver nano components and store energy at nano-scale. Graphene is the first isolated nanomaterial that displays single-atom thickness. It exhibits quantum confinement that enables it to possess a unique combination of fascinating electronic, optical, and mechanical properties. Modifying the surface of graphene is extremely significant to enable its incorporation into applications of interest. We demonstrated the ability of chemically modified graphene sheets to act as GNP stabilizing templates in solution, and utilized this to process GNP composites of graphene. We discovered that GNPs synthesized by chemical or microwave reduction stabilize on graphene-oxide sheets to form snow-flake morphologies and bare-surfaces respectively. These hybrid nano constructs were extensively studied to understand the effect and nature of GNPs

Boriding of high carbon high chromium cold work tool steel

NASA Astrophysics Data System (ADS)

Muhammad, W.

2014-06-01

High-carbon high-chromium cold work tool steels are widely used for blanking and cold forming of punches and dies. It is always advantageous to obtain an increased wear resistant surface to improve life and performance of these steels. In this connection boriding of a high-carbon high-chromium cold work die steel, D3, was conducted in a mixture of 30% B4C, 70% borax at 950 °C for two, four and six hours. Case depth of the borided layer obtained was between 40 to 80 μm. After boriding, the surface hardness achieved was between 1430 to 1544 HV depending upon the process time. X-ray diffraction studies confirmed the formation of a duplex compound layer consisting of FeB and Fe2B. It is generally considered that FeB is undesirable because of its inherent brittleness. Post boriding treatment (homogenization) transformed the compound layer into single-phase layer of Fe2B, while surface hardness decreased to 1345-1430 HV. Pin-on-disc wer test showed that wear resistance of the borided samples was superior as compared to non-borided material and increased with boriding time.

Properties of boride-added powder metallurgy magnesium alloys

NASA Astrophysics Data System (ADS)

Tanaka, Atsushi; Yoshimura, Syota; Fujima, Takuya; Takagi, Ken-ichi

2009-06-01

Magnesium alloys with metallic borides, magnesium diboride (MgB2) or aluminum diboride (AlB2), were investigated regarding their mechanical properties, transverse rupture strength (TRS) and micro Vickers hardness (HV). The alloys were made from pure Mg, Al and B powders by mechanical alloying and hot pressing to have boride content of between 2.0 and 20 vol%. The alloy with AlB2 exhibited an obvious improvement of HV around a boride content of 6 vol% though the other alloy, with MgB2, did not. TRS showed moderate maxima around the same boride content region for the both alloys. X-ray diffraction measurements indicated an intermetallic compound, Mg17Al12, formed in the alloy with AlB2, which was consistent with its higher hardness.

Mid-infrared polaritonic coupling between boron nitride nanotubes and graphene.

PubMed

Xu, Xiaoji G; Jiang, Jian-Hua; Gilburd, Leonid; Rensing, Rachel G; Burch, Kenneth S; Zhi, Chunyi; Bando, Yoshio; Golberg, Dmitri; Walker, Gilbert C

2014-11-25

Boron nitride (BN) is considered to be a promising substrate for graphene-based devices in part because its large band gap can serve to insulate graphene in layered heterostructures. At mid-infrared frequencies, graphene supports surface plasmon polaritons (SPPs), whereas hexagonal-BN (h-BN) is found to support surface phonon polaritons (SPhPs). We report on the observation of infrared polaritonic coupling between graphene SPPs and boron nitride nanotube (BNNT) SPhPs. Infrared scattering type scanning near-field optical microscopy is used to obtain spatial distribution of the two types of polaritons at the nanoscale. The observation suggests that those polaritons interact at the nanoscale in a one-dimensional/two-dimensional (1D/2D) geometry, exchanging energy in a nonplanar configuration at the nanoscale. Control of the polaritonic interaction is achieved by adjustment of the graphene Fermi level through voltage gating. Our observation suggests that boron nitride nanotubes and graphene can interact at mid-infrared frequencies and coherently exchange their energies at the nanoscale through the overlap of mutual electric near field of surface phonon polaritons and surface plasmon polaritons. Such interaction enables the design of nano-optical devices based on BNNT-graphene polaritonics in the mid-infrared range.

Finding the Stable Structures of WxN1-x with an ab-initio High-Throughput Approach

DTIC Science & Technology

2014-03-13

cubic boron nitride[4], carbonitrides,[5] and transition metal borides .[6, 7] Over the past several years there has been considerable theoretical...include ionic and covalent structures which seem chemically similar to W-N. These include borides , carbides, oxides, and other nitrides. In this paper we...metallic alloys, [23–27] we extended it to include over fifty new structures. These include nitrides, oxides, borides , and carbides. The important

Characterization and diffusion model for the titanium boride layers formed on the Ti6Al4V alloy by plasma paste boriding

NASA Astrophysics Data System (ADS)

Keddam, Mourad; Taktak, Sukru

2017-03-01

The present study is focused on the estimation of activation energy of boron in the plasma paste borided Ti6Al4V alloy, which is extensively used in technological applications, using an analytical diffusion model. Titanium boride layers were successfully produced by plasma paste boriding method on the Ti6Al4V alloy in the temperature range of 973-1073 K for a treatment time ranging from 3 to 7 h. The presence of both TiB2 top-layer and TiB whiskers sub-layer was confirmed by the XRD analysis and SEM observations. The surface hardness of the borided alloy was evaluated using Micro-Knoop indenter. The formation rates of the TiB2 and TiB layers were found to have a parabolic character at all applied process temperatures. A diffusion model was suggested to estimate the boron diffusivities in TiB2 and TiB layers under certain assumptions, by considering the effect of boride incubation times. Basing on own experimental data on boriding kinetics, the activation energies of boron in TiB2 and TiB phases were estimated as 136.24 ± 0.5 and 63.76 ± 0.5 kJ mol-1, respectively. Finally, the obtained values of boron activation energies for Ti6Al4V alloy were compared with the data available in the literature.

Growth of gallium nitride and indium nitride nanowires on conductive and flexible carbon cloth substrates.

PubMed

Yang, Yi; Ling, Yichuan; Wang, Gongming; Lu, Xihong; Tong, Yexiang; Li, Yat

2013-03-07

We report a general strategy for synthesis of gallium nitride (GaN) and indium nitride (InN) nanowires on conductive and flexible carbon cloth substrates. GaN and InN nanowires were prepared via a nanocluster-mediated growth method using a home built chemical vapor deposition (CVD) system with Ga and In metals as group III precursors and ammonia as a group V precursor. Electron microscopy studies reveal that the group III-nitride nanowires are single crystalline wurtzite structures. The morphology, density and growth mechanism of these nanowires are determined by the growth temperature. Importantly, a photoelectrode fabricated by contacting the GaN nanowires through a carbon cloth substrate shows pronounced photoactivity for photoelectrochemical water oxidation. The ability to synthesize group III-nitride nanowires on conductive and flexible substrates should open up new opportunities for nanoscale photonic, electronic and electrochemical devices.

Magnesium Aluminum Borides as Explosive Materials

DTIC Science & Technology

2011-12-20

Metal Silicides , and Metal Borides by Chemical Vapour Deposition Using Single Organometallic Precursors,” Trans. Inst. Met. Finishing, 72, 127-129...391 (2003). 62. X. Xiaojing, D. Bohua, Q. Zuanhui, and L. Yuanhui, “ Preparation and Synthesis Mechanism of Li-B Alloy,” Rare Metal Materials and...SUPPLEMENTARY NOTES 14. ABSTRACT Metal boride.; and boroo carbide Witted l’"irh Al ’I\\· ere compared co B. Mg. Al Mg:-AJ and Si a.s poteotia! fuel ad.diti

Plasma metallurgical production of nanocrystalline borides and carbides

NASA Astrophysics Data System (ADS)

Galevsky, G. V.; Rudneva, V. V.; Cherepanov, A. N.; Galevsky, S. G.; Efimova, K. A.

2016-09-01

he experience in production and study of properties of nanocrystalline borides and chromium carbides, titanium, silicon was summarized. The design and features of the vertical three-jet once-through reactor with power 150 kW, used in the plasma metallurgical production, was described. The technological, thermotechnical and resource characteristics of the reactor were identified. The parameters of borides and carbides synthesis, their main characteristics in the nanodispersed state and equipment-technological scheme of production were provided. Evaluation of engineering-and-economical performance of the laboratory and industrial levels of borides and carbides production and the state corresponding to the segment of the world market was carried out.

Characterisation of titanium-titanium boride composites processed by powder metallurgy techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Selva Kumar, M., E-mail: sel_mcet@yahoo.co.in; Chandrasekar, P.; Chandramohan, P.

2012-11-15

In this work, a detailed characterisation of titanium-titanium boride composites processed by three powder metallurgy techniques, namely, hot isostatic pressing, spark plasma sintering and vacuum sintering, was conducted. Two composites with different volume percents of titanium boride reinforcement were used for the investigation. One was titanium with 20% titanium boride, and the other was titanium with 40% titanium boride (by volume). Characterisation was performed using X-ray diffraction, electron probe micro analysis - energy dispersive spectroscopy and wavelength dispersive spectroscopy, image analysis and scanning electron microscopy. The characterisation results confirm the completion of the titanium boride reaction. The results reveal themore » presence of titanium boride reinforcement in different morphologies such as needle-shaped whiskers, short agglomerated whiskers and fine plates. The paper also discusses how mechanical properties such as microhardness, elastic modulus and Poisson's ratio are influenced by the processing techniques as well as the volume fraction of the titanium boride reinforcement. - Highlights: Black-Right-Pointing-Pointer Ti-TiB composites were processed by HIP, SPS and vacuum sintering. Black-Right-Pointing-Pointer The completion of Ti-TiB{sub 2} reaction was confirmed by XRD, SEM and EPMA studies. Black-Right-Pointing-Pointer Hardness and elastic properties of Ti-TiB composites were discussed. Black-Right-Pointing-Pointer Processing techniques were compared with respect to their microstructure.« less

Functionalized boron nitride nanotubes

DOEpatents

Sainsbury, Toby; Ikuno, Takashi; Zettl, Alexander K

2014-04-22

A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

The Physics and Chemistry of carbides, Nitrides and Borides. Volume 185

DTIC Science & Technology

1990-01-01

and C-B-C chains [15,17]. Clearly, the use of boron-rich solids as electronic materials will place new demands on the quality of materials. In this...first heated in a pyrolytic boron nitride (PBN) crucible ( Union Carbide Corp.) under high vacuum (< 50 mTorr) to 1900°C. This removed surface...contamination of the sample. The powders were loaded into a graphite die with a high-purity BN die liner ( Union Carbide Grade HBC) with inner diameter of 3/8

Synthesis of nanoscale copper nitride thin film and modification of the surface under high electronic excitation.

PubMed

Ghosh, S; Tripathi, A; Ganesan, V; Avasthi, D K

2008-05-01

Nanoscale (approximately 90 nm) Copper nitride (Cu3N) films are deposited on borosilicate glass and Si substrates by RF sputtering technique in the reactive environment of nitrogen gas. These films are irradiated with 200 MeV Au15+ ions from Pelletron accelerator in order to modify the surface by high electronic energy deposition of heavy ions. Due to irradiation (i) at incident ion fluence of 1 x 10(12) ions/cm2 enhancement of grains, (ii) at 5 x 10912) ions/cm2 mass transport on the films surface, (iii) at 2 x 10(13) ions/cm2 line-like features on Cu3N/glass and nanometallic structures on Cu3N/Si surface are observed. The surface morphology is examined by atomic force microscope (AFM). All results are explained on the basis of a thermal spike model of ion-solid interaction.

Crystal structure and phase stability of tungsten borides

NASA Astrophysics Data System (ADS)

Li, Quan; Zhou, Dan; Ma, Yanming; Chen, Changfeng

2013-03-01

We address the longstanding and controversial issue of ground-state structures of technically important tungsten borides using a first-principles structural search method via a particle-swarm optimization (PSO) algorithm. We have explored a large set of stable chemical compositions (convex hull) and clarified the ground-state structures for a wide range of boron concentrations, including W2B, W3B2,WB,W2B3, WB2,W2B5, WB3, and WB4. We further assessed relative stability of various tungsten borides and compared the calculated results with previously reported experimental data. The phase diagram predicted by the presented calculations may serve as a useful guide for synthesis of a variety of tungsten borides. This work was supported by DOE Grant No. DE-FC52-06NA26274.

Morphology and structure of borides in as-cast titanium and gamma-titanium aluminide-based alloys

NASA Astrophysics Data System (ADS)

Kitkamthorn, Usanee

In this study, the morphology and structure of the borides in boron-modified Ti- and gamma-TiAl-based alloys have been investigated using SEM, TEM, and HRTEM. A variety of different boride morphologies was observed including plates, needles, and ribbons. For the plate and needle borides, the major boride phase is B27 TiB. The needle borides have their major axis parallel to [010], and are bounded by (100) and {101} type-facets. The plate borides develop the same types of facets as the needles and have habit planes parallel to the (100). There are high densities of intrinsic stacking faults on (100) in these borides and these correspond to thin embedded layers of the Bf structure. The plate borides do not exhibit well-defined ORs with respect to the surrounding phases, suggesting that they develop in the liquid melt and were then trapped by the growing solid. Needle borides are observed mostly at boundaries between lamellar colonies: these needles tend to occur in groups lying nearly parallel to one another and, in some cases, to adopt well-defined ORs with respect to the surrounding phases. Cored borides with metallic phases such as beta, alpha, o and alpha 2+gamma in the center are frequently observed, especially in the Ti-based alloy. These core phases usually adopt well-defined ORs with respect to the surrounding boride which enable low-energy coherent interfaces to form between the phases. The ribbon borides are comprised of thin boride flakes interspersed with thin metallic layers. The major boride phase in these flakes is Bf TiB. The habit plane of the flakes is (010) and there are high densities of faults on this plane corresponding to intergrowths of the Ti3B 4 and TiB2 phases, together with thin layers or occluded pockets of metallic B2 phase. Occasional faults are observed on {110} corresponding to embedded slabs of B27 TiB. There is a well-defined OR between the boride flakes and the B2 phase within the ribbons, but not with the surrounding matrix. The

Amorphous Iron Borides: Preparation, Structure and Magnetic Properties.

DTIC Science & Technology

1982-09-28

temperature. External magnetic field experiments were performed in a superconducting solenoid with both source and absor- ber at 4.2 K. The observed...D-Ai20 919 AMORPHOUS IRON BORIDES: PREPARATION STRUCTURE AND i/i MAGNETIC PROPERTIES(U) JOHNS HOPKINS UNIV LAUREL NO APPLIED PHYSICS LRB K MOORJRNI...NATIONAL BUREAU OF STANOANOS-93-A 10 AMORPHOUS IRON BORIDES: PREPARATION, STRUCTURE ~AND MAGNETIC PROPERTIES FINAL REPORT Kishin Moorjani September 1982 U

Iron Carbides and Nitrides: Ancient Materials with Novel Prospects.

PubMed

Ye, Zhantong; Zhang, Peng; Lei, Xiang; Wang, Xiaobai; Zhao, Nan; Yang, Hua

2018-02-07

Iron carbides and nitrides have aroused great interest in researchers, due to their excellent magnetic properties, good machinability and the particular catalytic activity. Based on these advantages, iron carbides and nitrides can be applied in various areas such as magnetic materials, biomedical, photo- and electrocatalysis. In contrast to their simple elemental composition, the synthesis of iron carbides and nitrides still has great challenges, particularly at the nanoscale, but it is usually beneficial to improve performance in corresponding applications. In this review, we introduce the investigations about iron carbides and nitrides, concerning their structure, synthesis strategy and various applications from magnetism to the catalysis. Furthermore, the future prospects are also discussed briefly. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanoscale Visualization of Elastic Inhomogeneities at TiN Coatings Using Ultrasonic Force Microscopy

NASA Astrophysics Data System (ADS)

Hidalgo, J. A.; Montero-Ocampo, C.; Cuberes, M. T.

2009-12-01

Ultrasonic force microscopy has been applied to the characterization of titanium nitride coatings deposited by physical vapor deposition dc magnetron sputtering on stainless steel substrates. The titanium nitride layers exhibit a rich variety of elastic contrast in the ultrasonic force microscopy images. Nanoscale inhomogeneities in stiffness on the titanium nitride films have been attributed to softer substoichiometric titanium nitride species and/or trapped subsurface gas. The results show that increasing the sputtering power at the Ti cathode increases the elastic homogeneity of the titanium nitride layers on the nanometer scale. Ultrasonic force microscopy elastic mapping on titanium nitride layers demonstrates the capability of the technique to provide information of high value for the engineering of improved coatings.

Nanoscale volcanoes: accretion of matter at ion-sculpted nanopores.

PubMed

Mitsui, Toshiyuki; Stein, Derek; Kim, Young-Rok; Hoogerheide, David; Golovchenko, J A

2006-01-27

We demonstrate the formation of nanoscale volcano-like structures induced by ion-beam irradiation of nanoscale pores in freestanding silicon nitride membranes. Accreted matter is delivered to the volcanoes from micrometer distances along the surface. Volcano formation accompanies nanopore shrinking and depends on geometrical factors and the presence of a conducting layer on the membrane's back surface. We argue that surface electric fields play an important role in accounting for the experimental observations.

Beta cell device using icosahedral boride compounds

DOEpatents

Aselage, Terrence L.; Emin, David

2002-01-01

A beta cell for converting beta-particle energies into electrical energy having a semiconductor junction that incorporates an icosahedral boride compound selected from B.sub.12 As.sub.2, B.sub.12 P.sub.2, elemental boron having an .alpha.-rhombohedral structure, elemental boron having a .beta.-rhombohedral structure, and boron carbides of the chemical formula B.sub.12-x C.sub.3-x, where 0.15boride compound self-heals, resisting degradation from radiation damage.

Certain physical properties of cobalt and nickel borides

NASA Technical Reports Server (NTRS)

Kostetskiy, I. I.; Lvov, S. N.

1981-01-01

The temperature dependence of the electrical resistivity, the thermal conductivity, and the thermal emf of cobalt and nickel borides were studied. In the case of the nickel borides the magnetic susceptibility and the Hall coefficient were determined at room temperature. The results are discussed with allowance for the current carrier concentration, the effect of various mechanisms of current-carrier scattering and the location of the Fermi level in relation to the 3d band.

Finding the Stable Structures of N1-xWx with an Ab Initio High-Throughput Approach

DTIC Science & Technology

2015-05-26

W. These include borides , carbides, oxides, and other nitrides. We also invented many structures to mimic the random pattern of vacancies on both the...structures. These include nitrides, oxides, borides , and carbides, as well as supercells of standard structures with atoms removed to mimic the random patter...1930). [15] R. Kiessling and Y. H. Liu, Thermal stability of the chromium, iron, and tungsten borides in streaming ammonia and the existence of a new

Boride Formation Induced by pcBN Tool Wear in Friction-Stir-Welded Stainless Steels

NASA Astrophysics Data System (ADS)

Park, Seung Hwan C.; Sato, Yutaka S.; Kokawa, Hiroyuki; Okamoto, Kazutaka; Hirano, Satoshi; Inagaki, Masahisa

2009-03-01

The wear of polycrystalline cubic boron nitride (pcBN) tool and its effect on second phase formation were investigated in stainless steel friction-stir (FS) welds. The nitrogen content and the flow stress were analyzed in these welds to examine pcBN tool wear. The nitrogen content in stir zone (SZ) was found to be higher in the austenitic stainless steel FS welds than in the ferritic and duplex stainless steel welds. The flow stress of austenitic stainless steels was almost 1.5 times larger than that of ferritic and duplex stainless steels. These results suggest that the higher flow stress causes the severe tool wear in austenitic stainless steels, which results in greater nitrogen pickup in austenitic stainless steel FS welds. From the microstructural observation, a possibility was suggested that Cr-rich borides with a crystallographic structure of Cr2B and Cr5B3 formed through the reaction between the increased boron and nitrogen and the matrix during FS welding (FSW).

The Nature of the Microstructure and Interface Boundary Formation in Directionally Solidified Ceramic Boride Composites

DTIC Science & Technology

2015-02-19

boride composites *Volodymyr Borysovych Filipov SCIENCE AND TECHNOLOGY CENTER IN UKRAINE METALISTIV 7A, KYIV, UKRAINE *FRANTSEVICH...microstructure and interface boundary formation in directionally solidified ceramic boride composites 5a. CONTRACT NUMBER STCU P-512 5b. GRANT NUMBER...BOUNDARY FORMATION IN DIRECTIONALLY SOLIDIFIED CERAMIC BORIDE COMPOSITES Project manager: Filipov Volodymyr Borysovych Phone: (+380.44) 424-13-67

Metal-boride phase formation on tungsten carbide (WC-Co) during microwave plasma chemical vapor deposition

NASA Astrophysics Data System (ADS)

Johnston, Jamin M.; Catledge, Shane A.

2016-02-01

Strengthening of cemented tungsten carbide by boriding is used to improve the wear resistance and lifetime of carbide tools; however, many conventional boriding techniques render the bulk carbide too brittle for extreme conditions, such as hard rock drilling. This research explored the variation in metal-boride phase formation during the microwave plasma enhanced chemical vapor deposition process at surface temperatures from 700 to 1100 °C. We showed several well-adhered metal-boride surface layers consisting of WCoB, CoB and/or W2CoB2 with average hardness from 23 to 27 GPa and average elastic modulus of 600-730 GPa. The metal-boride interlayer was shown to be an effective diffusion barrier against elemental cobalt; migration of elemental cobalt to the surface of the interlayer was significantly reduced. A combination of glancing angle X-ray diffraction, electron dispersive spectroscopy, nanoindentation and scratch testing was used to evaluate the surface composition and material properties. An evaluation of the material properties shows that plasma enhanced chemical vapor deposited borides formed at substrate temperatures of 800 °C, 850 °C, 900 °C and 1000 °C strengthen the material by increasing the hardness and elastic modulus of cemented tungsten carbide. Additionally, these boride surface layers may offer potential for adhesion of ultra-hard carbon coatings.

Predicting the structural and electronic properties of two-dimensional single layer boron nitride sheets

NASA Astrophysics Data System (ADS)

Li, Xiao-Dong; Cheng, Xin-Lu

2018-02-01

Three two-dimensional (2D) single layer boron nitride sheets have been predicted based on the first-principles calculations. These 2D boron nitride sheets are comprised of equivalent boron atoms and nitride atoms with sp2 and sp bond hybridization. The geometry optimization reflects that they all possess stable planar crystal structures with the space group P 6 bar 2 m (D3h3) symmetry. The charge density distribution manifests that the B-N bonds in these boron nitride sheets are covalent in nature but with ionic characteristics. The tunable band gaps indicate their potential applications in nanoscale electronic and optoelectronic devices by changing the length of sp-bonded Bsbnd N linkages.

Plasma boriding of a cobalt-chromium alloy as an interlayer for nanostructured diamond growth

NASA Astrophysics Data System (ADS)

Johnston, Jamin M.; Jubinsky, Matthew; Catledge, Shane A.

2015-02-01

Chemical vapor deposited (CVD) diamond coatings can potentially improve the wear resistance of cobalt-chromium medical implant surfaces, but the high cobalt content in these alloys acts as a catalyst to form graphitic carbon. Boriding by high temperature liquid baths and powder packing has been shown to improve CVD diamond compatibility with cobalt alloys. We use the microwave plasma-enhanced (PE) CVD process to deposit interlayers composed primarily of the borides of cobalt and chromium. The use of diborane (B2H6) in the plasma feedgas allows for the formation of a robust boride interlayer for suppressing graphitic carbon during subsequent CVD of nano-structured diamond (NSD). This metal-boride interlayer is shown to be an effective diffusion barrier against elemental cobalt for improving nucleation and adhesion of NSD coatings on a CoCrMo alloy. Migration of elemental cobalt to the surface of the interlayer is significantly reduced and undetectable on the surface of the subsequently-grown NSD coating. The effects of PECVD boriding are compared for a range of substrate temperatures and deposition times and are evaluated using glancing-angle X-ray diffraction (XRD), cross-sectional scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and micro-Raman spectroscopy. Boriding of CoCrMo results in adhered nanostructured diamond coatings with low surface roughness.

Kinetics and Tribological Characterization of Pack-Borided AISI 1025 Steel

NASA Astrophysics Data System (ADS)

Gómez-Vargas, O. A.; Keddam, M.; Ortiz-Domínguez, M.

2017-03-01

In this present study, the AISI 1025 steel was pack-borided in the temperature range of 1,123-1,273 K for different treatment times ranging from 2 to 8 h. A diffusion model was suggested to estimate the boron diffusion coefficients in the Fe2B layers. As a result, the boron activation energy for the AISI 1025 steel was estimated as 174.36 kJ/mol. This value of energy was compared with the literature data. To extend the validity of the present model, other additional boriding conditions were considered. The boride layers formed on the AISI 1025 steel were characterized by the following experimental techniques: scanning electron microscopy, X-ray diffraction analysis and the Daimler-Benz Rockwell-C indentation technique. Finally, the scratch and pin-on-disc tests for wear resistance were achieved using an LG Motion Ltd and a CSM tribometer, respectively, under dry sliding conditions.

Single-Photon Emitters in Boron Nitride Nanococoons.

PubMed

Ziegler, Joshua; Blaikie, Andrew; Fathalizadeh, Aidin; Miller, David; Yasin, Fehmi S; Williams, Kerisha; Mohrhardt, Jordan; McMorran, Benjamin J; Zettl, Alex; Alemán, Benjamín

2018-04-11

Quantum emitters in two-dimensional hexagonal boron nitride (hBN) are attractive for a variety of quantum and photonic technologies because they combine ultra-bright, room-temperature single-photon emission with an atomically thin crystal. However, the emitter's prominence is hindered by large, strain-induced wavelength shifts. We report the discovery of a visible-wavelength, single-photon emitter (SPE) in a zero-dimensional boron nitride allotrope (the boron nitride nanococoon, BNNC) that retains the excellent optical characteristics of few-layer hBN while possessing an emission line variation that is lower by a factor of 5 than the hBN emitter. We determined the emission source to be the nanometer-size BNNC through the cross-correlation of optical confocal microscopy with high-resolution scanning and transmission electron microscopy. Altogether, this discovery enlivens color centers in BN materials and, because of the BN nanococoon's size, opens new and exciting opportunities in nanophotonics, quantum information, biological imaging, and nanoscale sensing.

The Growth Behavior of Titanium Boride Layers in α and β Phase Fields of Titanium

NASA Astrophysics Data System (ADS)

Lv, Xiaojun; Hu, Lingyun; Shuang, Yajing; Liu, Jianhua; Lai, Yanqing; Jiang, Liangxing; Li, Jie

2016-07-01

In this study, the commercially pure titanium was successfully electrochemical borided in a borax-based electrolyte. The process was carried out at a constant cathodic current density of 300 mA cm-2 and at temperatures of 1123 K and 1223 K (850 °C and 950 °C) for 0.5, 1, 2, 3, and 5 hours. The growth behavior of titanium boride layers in the α phase field of titanium was compared with that in the β phase field. After boriding, the presence of both the TiB2 top layer and TiB whisker sub-layer was confirmed by the X-ray diffraction (XRD) and scanning electron microscope. The relationship between the thickness of boride layers and boriding time was found to have a parabolic character in both α and β phase fields of titanium. The TiB whiskers showed ultra-fast growth rate in the β phase field. Its growth rate constant was found to be as high as 3.2002 × 10-13 m2 s-1. Besides, the chemical resistance of the TiB2 layer on the surface of titanium substrate was characterized by immersion tests in molten aluminum.

Energy efficiency in nanoscale synthesis using nanosecond plasmas.

PubMed

Pai, David Z; Ken Ostrikov, Kostya; Kumar, Shailesh; Lacoste, Deanna A; Levchenko, Igor; Laux, Christophe O

2013-01-01

We report a nanoscale synthesis technique using nanosecond-duration plasma discharges. Voltage pulses 12.5 kV in amplitude and 40 ns in duration were applied repetitively at 30 kHz across molybdenum electrodes in open ambient air, generating a nanosecond spark discharge that synthesized well-defined MoO₃ nanoscale architectures (i.e. flakes, dots, walls, porous networks) upon polyamide and copper substrates. No nitrides were formed. The energy cost was as low as 75 eV per atom incorporated into a nanostructure, suggesting a dramatic reduction compared to other techniques using atmospheric pressure plasmas. These findings show that highly efficient synthesis at atmospheric pressure without catalysts or external substrate heating can be achieved in a simple fashion using nanosecond discharges.

Nano-Disperse Borides and Carbides: Plasma Technology Production, Specific Properties, Economic Evaluation

NASA Astrophysics Data System (ADS)

Galevskii, G. V.; Rudneva, V. V.; Galevskii, S. G.; Tomas, K. I.; Zubkov, M. S.

2016-04-01

The experience of production and study on properties of nano-disperse chromium and titanium borides and carbides, and silicon carbide has been generalized. The structure and special service aspects of utilized plasma-metallurgical complex equipped with a three-jet direct-flow reactor with a capacity of 150 kW have been outlined. Processing, heat engineering and service life characteristics of the reactor are specified. The synthesis parameters of borides and carbides, as well as their basic characteristics in nano-disperse condition and their production flow diagram are outlined. Engineering and economic performance of synthesizing borides in laboratory and industrial conditions is assessed, and the respective segment of the international market as well. The work is performed at State Siberian Industrial University as a project part of the State Order of Ministry of Science and Education of the Russian Federation No. 11.1531/2014/K.

The effect of boriding on wear resistance of cold work tool steel

NASA Astrophysics Data System (ADS)

Anzawa, Y.; Koyama, S.; Shohji, I.

2017-05-01

Recently, boriding has attracted extensive attention as surface stiffening processing of plain steel. In this research, the influence of processing time on the formation layer of cold work tool steel (KD11MAX) by Al added fused salt bath was examined. In addition, in order to improve the abrasion resistance of KD11MAX, the effect of the treatment of boronization on the formation layer has been investigated. Boriding were performed in molten borax which contained about 10 mass% Al at processing time of 1.8 ~ 7.2 ks (processing temperature of 1303 K). As a result of the examination, the hardness of the boriding layer becomes about 1900 HV when the processing time of 3.6 ks. Also the abrasion resistance has improved remarkably. Furthermore, it was revealed that the formation layer was boronized iron from the Vickers hardness and analysis of the X-ray diffraction measurement.

Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

NASA Astrophysics Data System (ADS)

Rousseau, Ian; Callsen, Gordon; Jacopin, Gwénolé; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas

2018-03-01

III-nitride surface states are expected to impact high surface-to-volume ratio devices, such as nano- and micro-wire light-emitting diodes, transistors, and photonic integrated circuits. In this work, reversible photoinduced oxygen desorption from III-nitride microdisk resonator surfaces is shown to increase optical attenuation of whispering gallery modes by 100 cm-1 at λ = 450 nm. Comparison of photoinduced oxygen desorption in unintentionally and n+-doped microdisks suggests that the spectral changes originate from the unpinning of the surface Fermi level, likely taking place at etched nonpolar III-nitride sidewalls. An oxygen-rich surface prepared by thermal annealing results in a broadband Q improvement to state-of-the-art values exceeding 1 × 104 at 2.6 eV. Such findings emphasize the importance of optically active surface states and their passivation for future nanoscale III-nitride optoelectronic and photonic devices.

Quantum electromechanics on silicon nitride nanomembranes

PubMed Central

Fink, J. M.; Kalaee, M.; Pitanti, A.; Norte, R.; Heinzle, L.; Davanço, M.; Srinivasan, K.; Painter, O.

2016-01-01

Radiation pressure has recently been used to effectively couple the quantum motion of mechanical elements to the fields of optical or microwave light. Integration of all three degrees of freedom—mechanical, optical and microwave—would enable a quantum interconnect between microwave and optical quantum systems. We present a platform based on silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Using planar capacitors with vacuum gaps of 60 nm and spiral inductor coils of micron pitch we realize microwave resonant circuits with large electromechanical coupling to planar acoustic structures of nanoscale dimensions and femtoFarad motional capacitance. Using this enhanced coupling, we demonstrate microwave backaction cooling of the 4.48 MHz mechanical resonance of a nanobeam to an occupancy as low as 0.32. These results indicate the viability of silicon nitride nanomembranes as an all-in-one substrate for quantum electro-opto-mechanical experiments. PMID:27484751

Quantum electromechanics on silicon nitride nanomembranes.

PubMed

Fink, J M; Kalaee, M; Pitanti, A; Norte, R; Heinzle, L; Davanço, M; Srinivasan, K; Painter, O

2016-08-03

Radiation pressure has recently been used to effectively couple the quantum motion of mechanical elements to the fields of optical or microwave light. Integration of all three degrees of freedom-mechanical, optical and microwave-would enable a quantum interconnect between microwave and optical quantum systems. We present a platform based on silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Using planar capacitors with vacuum gaps of 60 nm and spiral inductor coils of micron pitch we realize microwave resonant circuits with large electromechanical coupling to planar acoustic structures of nanoscale dimensions and femtoFarad motional capacitance. Using this enhanced coupling, we demonstrate microwave backaction cooling of the 4.48 MHz mechanical resonance of a nanobeam to an occupancy as low as 0.32. These results indicate the viability of silicon nitride nanomembranes as an all-in-one substrate for quantum electro-opto-mechanical experiments.

Method of making an icosahedral boride structure

DOEpatents

Hersee, Stephen D.; Wang, Ronghua; Zubia, David; Aselage, Terrance L.; Emin, David

2005-01-11

A method for fabricating thin films of an icosahedral boride on a silicon carbide (SiC) substrate is provided. Preferably the icosahedral boride layer is comprised of either boron phosphide (B.sub.12 P.sub.2) or boron arsenide (B.sub.12 As.sub.2). The provided method achieves improved film crystallinity and lowered impurity concentrations. In one aspect, an epitaxially grown layer of B.sub.12 P.sub.2 with a base layer or substrate of SiC is provided. In another aspect, an epitaxially grown layer of B.sub.12 As.sub.2 with a base layer or substrate of SiC is provided. In yet another aspect, thin films of B.sub.12 P.sub.2 or B.sub.12 As.sub.2 are formed on SiC using CVD or other vapor deposition means. If CVD techniques are employed, preferably the deposition temperature is above 1050.degree. C., more preferably in the range of 1100.degree. C. to 1400.degree. C., and still more preferably approximately 1150.degree. C.

Energy efficiency in nanoscale synthesis using nanosecond plasmas

PubMed Central

Pai, David Z.; (Ken) Ostrikov, Kostya; Kumar, Shailesh; Lacoste, Deanna A.; Levchenko, Igor; Laux, Christophe O.

2013-01-01

We report a nanoscale synthesis technique using nanosecond-duration plasma discharges. Voltage pulses 12.5 kV in amplitude and 40 ns in duration were applied repetitively at 30 kHz across molybdenum electrodes in open ambient air, generating a nanosecond spark discharge that synthesized well-defined MoO3 nanoscale architectures (i.e. flakes, dots, walls, porous networks) upon polyamide and copper substrates. No nitrides were formed. The energy cost was as low as 75 eV per atom incorporated into a nanostructure, suggesting a dramatic reduction compared to other techniques using atmospheric pressure plasmas. These findings show that highly efficient synthesis at atmospheric pressure without catalysts or external substrate heating can be achieved in a simple fashion using nanosecond discharges. PMID:23386976

Niobium boride layers deposition on the surface AISI D2 steel by a duplex treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kon, O., E-mail: okon42@htotmail.com; Pazarlioglu, S.; Sen, S.

2015-03-30

In this paper, we investigated the possibility of deposition of niobium boride layers on the surface of AISI D2 steel by a duplex treatment. At the first step of duplex treatment, boronizing was performed on AISI D2 steel samples at 1000{sup o}C for 2h and then pre-boronized samples niobized at 850°C, 900°C and 950°C using thermo-reactive deposition method for 1–4 h. The presence of the niobium boride layers such as NbB, NbB{sub 2} and Nb{sub 3}B{sub 4} and also iron boride phases such as FeB, Fe{sub 2}B were examined by X-ray diffraction analysis. Scanning electron microscope (SEM) and micro-hardness measurementsmore » were realized. Experimental studies showed that the depth of the coating layers increased with increasing temperature and times and also ranged from 0.42 µm to 2.43 µm, depending on treatment time and temperature. The hardness of the niobium boride layer was 2620±180 HV{sub 0.005}.« less

Computational-Experimental Processing of Boride/Carbide Composites by Reactive Infusion of Hf Alloy Melts into B4C

DTIC Science & Technology

2015-09-16

AFRL-AFOSR-VA-TR-2015-0314 Computational -Experimental Processing of Boride /Carbide Composites by Reactive Infusion of Hf Alloy Melts into B4C...Computational -Experimental Processing of Boride /Carbide Composites by Reactive Infusion of Hf Alloy Melts into B4C 5a.  CONTRACT NUMBER 5b.  GRANT...with a packed bed of B4C to form boride - carbide precipitates. Although the ultimate goal of the research endeavor is to enhance significantly the

Processing development of 4 tantalum carbide-hafnium carbide and related carbides and borides for extreme environments

NASA Astrophysics Data System (ADS)

Gaballa, Osama Gaballa Bahig

Carbides, nitrides, and borides ceramics are of interest for many applications because of their high melting temperatures and good mechanical properties. Wear-resistant coatings are among the most important applications for these materials. Materials with high wear resistance and high melting temperatures have the potential to produce coatings that resist degradation when subjected to high temperatures and high contact stresses. Among the carbides, Al4SiC4 is a low density (3.03 g/cm3), high melting temperature (>2000°C) compound, characterized by superior oxidation resistance, and high compressive strength. These desirable properties motivated this investigation to (1) obtain high-density Al4SiC4 at lower sintering temperatures by hot pressing, and (2) to enhance its mechanical properties by adding WC and TiC to the Al4SiC4. Also among the carbides, tantalum carbide and hafnium carbide have outstanding hardness; high melting points (3880°C and 3890°C respectively); good resistance to chemical attack, thermal shock, and oxidation; and excellent electronic conductivity. Tantalum hafnium carbide (Ta4HfC 5) is a 4-to-1 ratio of TaC to HfC with an extremely high melting point of 4215 K (3942°C), which is the highest melting point of all currently known compounds. Due to the properties of these carbides, they are considered candidates for extremely high-temperature applications such as rocket nozzles and scramjet components, where the operating temperatures can exceed 3000°C. Sintering bulk components comprised of these carbides is difficult, since sintering typically occurs above 50% of the melting point. Thus, Ta4 HfC5 is difficult to sinter in conventional furnaces or hot presses; furnaces designed for very high temperatures are expensive to purchase and operate. Our research attempted to sinter Ta4HfC5 in a hot press at relatively low temperature by reducing powder particle size and optimizing the powder-handling atmosphere, milling conditions, sintering

Growth kinetics of borided layers: Artificial neural network and least square approaches

NASA Astrophysics Data System (ADS)

Campos, I.; Islas, M.; Ramírez, G.; VillaVelázquez, C.; Mota, C.

2007-05-01

The present study evaluates the growth kinetics of the boride layer Fe 2B in AISI 1045 steel, by means of neural networks and the least square techniques. The Fe 2B phase was formed at the material surface using the paste boriding process. The surface boron potential was modified considering different boron paste thicknesses, with exposure times of 2, 4 and 6 h, and treatment temperatures of 1193, 1223 and 1273 K. The neural network and the least square models were set by the layer thickness of Fe 2B phase, and assuming that the growth of the boride layer follows a parabolic law. The reliability of the techniques used is compared with a set of experiments at a temperature of 1223 K with 5 h of treatment time and boron potentials of 2, 3, 4 and 5 mm. The results of the Fe 2B layer thicknesses show a mean error of 5.31% for the neural network and 3.42% for the least square method.

Theoretical and Experimental Investigations on the Mechanism of Carbothermal Reduction of Zirconia (Preprint)

DTIC Science & Technology

2012-08-01

Properties. Abyss Books, Washington, D.C., 2002. 2. G. Montel, A. Lebugle and H. Pastor. "Manufacture of Materials Containing Refractory Borides ...and ZrO2," International Journal of Refractory Metals and Hard Materials, 17, 235-43 (1999). 10. A.W. Weimer, Carbide, nitride and boride

Nanoscale simultaneous chemical and mechanical imaging via peak force infrared microscopy

PubMed Central

Wang, Le; Wang, Haomin; Wagner, Martin; Yan, Yong; Jakob, Devon S.; Xu, Xiaoji G.

2017-01-01

Nondestructive chemical and mechanical measurements of materials with ~10-nm spatial resolution together with topography provide rich information on the compositions and organizations of heterogeneous materials and nanoscale objects. However, multimodal nanoscale correlations are difficult to achieve because of the limitation on spatial resolution of optical microscopy and constraints from instrumental complexities. We report a novel noninvasive spectroscopic scanning probe microscopy method—peak force infrared (PFIR) microscopy—that allows chemical imaging, collection of broadband infrared spectra, and mechanical mapping at a spatial resolution of 10 nm. In our technique, chemical absorption information is directly encoded in the withdraw curve of the peak force tapping cycle after illumination with synchronized infrared laser pulses in a simple apparatus. Nanoscale phase separation in block copolymers and inhomogeneity in CH3NH3PbBr3 perovskite crystals are studied with correlative infrared/mechanical nanoimaging. Furthermore, we show that the PFIR method is sensitive to the presence of surface phonon polaritons in boron nitride nanotubes. PFIR microscopy will provide a powerful analytical tool for explorations at the nanoscale across wide disciplines. PMID:28691096

Selection of peptides binding to metallic borides by screening M13 phage display libraries.

PubMed

Ploss, Martin; Facey, Sandra J; Bruhn, Carina; Zemel, Limor; Hofmann, Kathrin; Stark, Robert W; Albert, Barbara; Hauer, Bernhard

2014-02-10

Metal borides are a class of inorganic solids that is much less known and investigated than for example metal oxides or intermetallics. At the same time it is a highly versatile and interesting class of compounds in terms of physical and chemical properties, like semiconductivity, ferromagnetism, or catalytic activity. This makes these substances attractive for the generation of new materials. Very little is known about the interaction between organic materials and borides. To generate nanostructured and composite materials which consist of metal borides and organic modifiers it is necessary to develop new synthetic strategies. Phage peptide display libraries are commonly used to select peptides that bind specifically to metals, metal oxides, and semiconductors. Further, these binding peptides can serve as templates to control the nucleation and growth of inorganic nanoparticles. Additionally, the combination of two different binding motifs into a single bifunctional phage could be useful for the generation of new composite materials. In this study, we have identified a unique set of sequences that bind to amorphous and crystalline nickel boride (Ni3B) nanoparticles, from a random peptide library using the phage display technique. Using this technique, strong binders were identified that are selective for nickel boride. Sequence analysis of the peptides revealed that the sequences exhibit similar, yet subtle different patterns of amino acid usage. Although a predominant binding motif was not observed, certain charged amino acids emerged as essential in specific binding to both substrates. The 7-mer peptide sequence LGFREKE, isolated on amorphous Ni3B emerged as the best binder for both substrates. Fluorescence microscopy and atomic force microscopy confirmed the specific binding affinity of LGFREKE expressing phage to amorphous and crystalline Ni3B nanoparticles. This study is, to our knowledge, the first to identify peptides that bind specifically to amorphous and

Friction and wear of radiofrequency-sputtered borides, silicides, and carbides

NASA Technical Reports Server (NTRS)

Brainard, W. A.; Wheeler, D. R.

1978-01-01

The friction and wear properties of several refractory compound coatings were examined. These compounds were applied to 440 C bearing steel surfaces by radiofrequency (RF) sputtering. The refractory compounds were the titanium and molybdenum borides, the titanium and molybdenum silicides, and the titanium, molybdenum, and boron carbides. Friction testing was done with a pin-on-disk wear apparatus at loads from 0.1 to 5.0 newtons. Generally, the best wear properties were obtained when the coatings were bias sputtered onto 440 C disks that had been preoxidized. Adherence was improved because of the better bonding of the coatings to the iron oxide formed during preoxidation. As a class the carbides provided wear protection to the highest loads. Titanium boride coatings provided low friction and good wear properties to moderate loads.

Friction of water on graphene and hexagonal boron nitride from ab initio methods: very different slippage despite very similar interface structures.

PubMed

Tocci, Gabriele; Joly, Laurent; Michaelides, Angelos

2014-12-10

Friction is one of the main sources of dissipation at liquid water/solid interfaces. Despite recent progress, a detailed understanding of water/solid friction in connection with the structure and energetics of the solid surface is lacking. Here, we show for the first time that ab initio molecular dynamics can be used to unravel the connection between the structure of nanoscale water and friction for liquid water in contact with graphene and with hexagonal boron nitride. We find that although the interface presents a very similar structure between the two sheets, the friction coefficient on boron nitride is ≈ 3 times larger than that on graphene. This comes about because of the greater corrugation of the energy landscape on boron nitride arising from specific electronic structure effects. We discuss how a subtle dependence of the friction on the atomistic details of a surface, which is not related to its wetting properties, may have a significant impact on the transport of water at the nanoscale, with implications for the development of membranes for desalination and for osmotic power harvesting.

Nano-solenoid: helicoid carbon-boron nitride hetero-nanotube

NASA Astrophysics Data System (ADS)

Zhang, Zi-Yue; Miao, Chunyang; Guo, Wanlin

2013-11-01

As a fundamental element of a nanoscale passive circuit, a nano-inductor is proposed based on a hetero-nanotube consisting of a spiral carbon strip and a spiral boron nitride strip. It is shown by density functional theory associated with nonequilibrium Green function calculations that the nanotube exhibits attractive transport properties tunable by tube chirality, diameter, component proportion and connection manner between the two strips, with excellent `OFF' state performance and high current on the order of 10-100 μA. All the hetero-nanotubes show negative differential resistance. The transmission peaks of current are absolutely derived from the helicoid carbon strips or C-BN boundaries, giving rise to a spiral current analogous with an energized nano-solenoid. According to Ampere's Law, the energized nano-solenoid can generate a uniform and tremendous magnetic field of more than 1 tesla, closing to that generated by the main magnet of medical nuclear magnetic resonance. Moreover, the magnitude of magnetic field can be easily modulated by bias voltage, providing great promise for a nano-inductor to realize electromagnetic conversion at the nanoscale.As a fundamental element of a nanoscale passive circuit, a nano-inductor is proposed based on a hetero-nanotube consisting of a spiral carbon strip and a spiral boron nitride strip. It is shown by density functional theory associated with nonequilibrium Green function calculations that the nanotube exhibits attractive transport properties tunable by tube chirality, diameter, component proportion and connection manner between the two strips, with excellent `OFF' state performance and high current on the order of 10-100 μA. All the hetero-nanotubes show negative differential resistance. The transmission peaks of current are absolutely derived from the helicoid carbon strips or C-BN boundaries, giving rise to a spiral current analogous with an energized nano-solenoid. According to Ampere's Law, the energized nano

Low temperature InP /Si wafer bonding using boride treated surface

NASA Astrophysics Data System (ADS)

Huang, Hui; Ren, Xiaomin; Wang, Wenjuan; Song, Hailan; Wang, Qi; Cai, Shiwei; Huang, Yongqing

2007-04-01

An approach for InP /Si wafer bonding based on boride-solution treatment was presented. The bonding energy is higher than the InP fracture energy by annealing at 280°C. An In0.53Ga0.47As/InP multiple-quantum-well (MQW) structure grown on InP was transferred onto Si substrate via the bonding process. X-ray diffraction and photoluminescence reveal that crystal quality of the bonded MQW was preserved. A thin B2O3-POx-SiO2 oxide layer of about 28nm thick at the bonding interface was detected. X-ray photoelectron spectroscopy and Raman analyses indicate that the formation of oxygen bridging bonds by boride treatment is responsible for the strong fusion obtained at such low temperature.

Deep eutectic solvent approach towards nickel/nickel nitride nanocomposites

DOE PAGES

Gage, Samuel H.; Ruddy, Daniel A.; Pylypenko, Svitlana; ...

2016-12-15

Nickel nitride is an attractive material for a broad range of applications including catalysis. However preparations and especially those targeting nanoscale particles remain a major challenge. Herein, we report a wet-chemical approach to produce nickel/nickel nitride nanocomposites using deep eutectic solvents. A choline chloride/urea deep eutectic solvent was used as a reaction medium to form gels containing nickel acetate tetrahydrate. Heat treatment of the gel in inert atmosphere forms nanoparticles embedded within a nitrogen-doped carbon matrix. Thermogravimetric analysis (TGA) and differential thermal analysis (DTA) were used to understand the decomposition profile of the precursors and to select pyrolysis temperatures locatedmore » in regions of thermal stability. X-ray diffraction (XRD) confirmed the presence of metallic nickel, whereas X-ray photoelectron spectroscopy (XPS) suggested the existence of a nickel nitride surface layer. According to transmission electron microscopy (TEM) analysis these mixed phase, possibly core-shell type nanoparticles, have very defined facets. Furthermore, these materials represent a unique opportunity to tune catalytic properties of nickel-based catalysts through control of their composition, surface structure, and morphology; in addition to employing potential benefits of a nitrogen-doped carbon support.« less

Taguchi Analysis on the Effect of Process Parameters on Densification During Spark Plasma Sintering of HfB2-20SiC (Preprint)

DTIC Science & Technology

2011-11-01

30 kN pressure and heating rate of 100 K/min. Introduction Boride , carbides and nitrides of the group IVB and VB transition metals are considered...10. Sciti D., Silvestroni L., Nygren M. Spark plasma sintering of Zr- and Hf- borides with decreasing amounts of MoSi2 as sintering aid Journal of

Micro-Abrasion Wear Resistance of Borided 316L Stainless Steel and AISI 1018 Steel

NASA Astrophysics Data System (ADS)

Reséndiz-Calderon, C. D.; Rodríguez-Castro, G. A.; Meneses-Amador, A.; Campos-Silva, I. E.; Andraca-Adame, J.; Palomar-Pardavé, M. E.; Gallardo-Hernández, E. A.

2017-11-01

The 316L stainless steel has high corrosion resistance but low tribological performance. In different industrial sectors (biomedical, chemical, petrochemical, and nuclear engineering), improvement upon wear resistance of 316L stainless steel components using accessible and inexpensive methods is critical. The AISI 1018 steel is widely used in industry, but its tribological performance is not the best among steels. Therefore, in this study the behavior of the borided 316L stainless steel and 1018 steel is evaluated under micro-abrasion wear. The boriding was carried out at 1223 K over 6 h of exposure time, resulting in a biphase layer composed of FeB/Fe2B phases. In order to evaluate Fe2B phase with no influence from FeB phase, AISI 1018 steel samples were borided at 1273 K for over 20 min and then diffusion annealed at 1273 K over 2 h to obtain a Fe2B mono-phase layer. Micro-abrasion wear resistance was evaluated by a commercial micro-abrasion testing rig using a mix of F-1200 SiC particles with deionized water as abrasive slurry. The obtained wear rates for FeB and Fe2B phases and for the 316L stainless steel were compared. Wear resistance of 316L stainless steel increases after boriding. The wear mechanisms for both phases and for the stainless steel were identified. Also, transient conditions for rolling and grooving abrasion were determined for the FeB and Fe2B phases.

Subminiature eddy current transducers for studying boride coatings

NASA Astrophysics Data System (ADS)

Dmitriev, S. F.; Ishkov, A. V.; Malikov, V. N.; Sagalakov, A. M.

2016-07-01

Strengthening of parts and units of machines, increased reliability and longer service life is an important task of modern mechanical engineering. The main objects of study in the work were selected steel 65G and 50HGA, wear-resistant boride coatings ternary system Fe-B-Fe n B which were investigated by scanning electron microscopy and eddy-current nondestructive methods.

Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunnelling microscopy.

PubMed

Wong, Dillon; Velasco, Jairo; Ju, Long; Lee, Juwon; Kahn, Salman; Tsai, Hsin-Zon; Germany, Chad; Taniguchi, Takashi; Watanabe, Kenji; Zettl, Alex; Wang, Feng; Crommie, Michael F

2015-11-01

Defects play a key role in determining the properties and technological applications of nanoscale materials and, because they tend to be highly localized, characterizing them at the single-defect level is of particular importance. Scanning tunnelling microscopy has long been used to image the electronic structure of individual point defects in conductors, semiconductors and ultrathin films, but such single-defect electronic characterization remains an elusive goal for intrinsic bulk insulators. Here, we show that individual native defects in an intrinsic bulk hexagonal boron nitride insulator can be characterized and manipulated using a scanning tunnelling microscope. This would typically be impossible due to the lack of a conducting drain path for electrical current. We overcome this problem by using a graphene/boron nitride heterostructure, which exploits the atomically thin nature of graphene to allow the visualization of defect phenomena in the underlying bulk boron nitride. We observe three different defect structures that we attribute to defects within the bulk insulating boron nitride. Using scanning tunnelling spectroscopy we obtain charge and energy-level information for these boron nitride defect structures. We also show that it is possible to manipulate the defects through voltage pulses applied to the scanning tunnelling microscope tip.

Breaking the GaN material limits with nanoscale vertical polarisation super junction structures: A simulation analysis

NASA Astrophysics Data System (ADS)

Unni, Vineet; Sankara Narayanan, E. M.

2017-04-01

This is the first report on the numerical analysis of the performance of nanoscale vertical superjunction structures based on impurity doping and an innovative approach that utilizes the polarisation properties inherent in III-V nitride semiconductors. Such nanoscale vertical polarisation super junction structures can be realized by employing a combination of epitaxial growth along the non-polar crystallographic axes of Wurtzite GaN and nanolithography-based processing techniques. Detailed numerical simulations clearly highlight the limitations of a doping based approach and the advantages of the proposed solution for breaking the unipolar one-dimensional material limits of GaN by orders of magnitude.

The Effects of Borides on the Mechanical Properties of TLPB Repaired Inconel 738 Superalloy

NASA Astrophysics Data System (ADS)

Wei, J.; Ye, Y.; Sun, Z.; Zou, G.; Bai, H.; Wu, A.; Liu, L.

2017-10-01

The transient liquid phase diffusion bonding (TLPB) method was used to repair an artificial crack in Inconel 738, which was notched by a femtosecond laser. Mixed ratios of BNi-1a:DF-4B were investigated at the bonding temperature of 1373 K (1100 °C) for 2 to 36 hours. The effect of borides on the mechanical properties of TLPB repaired joints was studied through analysis of the microstructure, fracture path, and morphology observations. The borides formation, morphology, distribution, and joints strength were studied in detail. The results showed that the diffusion of B can either increase or decrease the joint strength, depending on its distribution and morphology. The amount of large blocky Ni-B compounds in the precipitate zone were reduced with increasing holding time, which resulted in an increase in joint strength. Nevertheless, further increasing the holding time led to a decrease in joint strength because of the formation of continuous acicular borides in the diffusion-affected zone. The fracture modes of TLPB joints were also discussed on the basis of the microstructure and fractography.

Effect of borides on hot deformation behavior and microstructure evolution of powder metallurgy high borated stainless steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Xuan

To investigate borides effect on the hot deformation behavior and microstructure evolution of powder metallurgy high borated stainless steel, hot compression tests at the temperatures of 950– 1150 °C and the strain rates of 0.01– 10 s{sup −1} were performed. Flow stress curves indicated that borides increased the material's stress level at low temperature but the strength was sacrificed at temperatures above 1100 °C. A hyperbolic-sine equation was used to characterize the dependence of the flow stress on the deformation temperature and strain rate. The hot deformation activation energy and stress exponent were determined to be 355 kJ/mol and 3.2,more » respectively. The main factors leading to activation energy and stress exponent of studied steel lower than those of commercial 304 stainless steel were discussed. Processing maps at the strains of 0.1, 0.3, 0.5, and 0.7 showed that flow instability mainly concentrated at 950– 1150 °C and strain rate higher than 0.6 s{sup −1}. Results of microstructure illustrated that dynamic recrystallization was fully completed at both high temperature-low strain rate and low temperature-high strain rate. In the instability region cracks were generated in addition to cavities. Interestingly, borides maintained a preferential orientation resulting from particle rotation during compression. - Highlights: •The decrement of activation energy was affected by boride and boron solution. •The decrease of stress exponent was influenced by composition and Cottrell atmosphere. •Boride represented a preferential orientation caused by particle rotation.« less

High-Temperature Syntheses of New, Thermally-Stable Chemical Compounds.

DTIC Science & Technology

SYNTHESIS(CHEMISTRY), HEAT RESISTANT PLASTICS, NITRILES, FLUORINE COMPOUNDS, COMPLEX COMPOUNDS, NITROGEN, SULFIDES, ORGANOMETALLIC COMPOUNDS, ORGANOBORANES, BORIDES, SPINEL, CARBIDES, NITRIDES, SILICIDES .

Non-Contact Tabletop Mechanical Testing of Ultra-High Temperature Ceramics

DTIC Science & Technology

2012-05-01

class of refractory materials including transition metal borides , carbides and nitrides e.g. ZrB2l HfB2) ZrC, HfC, TaC, HfN and ZrN. They recently...ike oxidizing atmospheres, at very high temperatures Refractory borides like ZrB2 and HfB2 have extremely high melting temperatures (over 3000°C...But borides are very poor in oxidation resistance, due to the nature of thär oxides Non-protective ZrCfe or Hf02 and volatile liquid B203. Addition

Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Yanfeng; Pan, Chengbin; Hui, Fei

2016-01-04

Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO{sub 2}, such as charge trapping and detrapping, stress induced leakage current, and untimelymore » dielectric breakdown. Moreover, we observe a unique layer-by-layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications.« less

Template-Free Synthesis of Highly Porous Boron Nitride: Insights into Pore Network Design and Impact on Gas Sorption.

PubMed

Marchesini, Sofia; McGilvery, Catriona M; Bailey, Josh; Petit, Camille

2017-10-24

Production of biocompatible and stable porous materials, e.g., boron nitride, exhibiting tunable and enhanced porosity is a prerequisite if they are to be employed to address challenges such as drug delivery, molecular separations, or catalysis. However, there is currently very limited understanding of the formation mechanisms of porous boron nitride and the parameters controlling its porosity, which ultimately prevents exploiting the material's full potential. Herein, we produce boron nitride with high and tunable surface area and micro/mesoporosity via a facile template-free method using multiple readily available N-containing precursors with different thermal decomposition patterns. The gases are gradually released, creating hierarchical pores, high surface areas (>1900 m 2 /g), and micropore volumes. We use 3D tomography techniques to reconstruct the pore structure, allowing direct visualization of the mesopore network. Additional imaging and analytical tools are employed to characterize the materials from the micro- down to the nanoscale. The CO 2 uptake of the materials rivals or surpasses those of commercial benchmarks or other boron nitride materials reported to date (up to 4 times higher), even after pelletizing. Overall, the approach provides a scalable route to porous boron nitride production as well as fundamental insights into the material's formation, which can be used to design a variety of boron nitride structures.

Free vibration analysis of single-walled boron nitride nanotubes based on a computational mechanics framework

NASA Astrophysics Data System (ADS)

Yan, J. W.; Tong, L. H.; Xiang, Ping

2017-12-01

Free vibration behaviors of single-walled boron nitride nanotubes are investigated using a computational mechanics approach. Tersoff-Brenner potential is used to reflect atomic interaction between boron and nitrogen atoms. The higher-order Cauchy-Born rule is employed to establish the constitutive relationship for single-walled boron nitride nanotubes on the basis of higher-order gradient continuum theory. It bridges the gaps between the nanoscale lattice structures with a continuum body. A mesh-free modeling framework is constructed, using the moving Kriging interpolation which automatically satisfies the higher-order continuity, to implement numerical simulation in order to match the higher-order constitutive model. In comparison with conventional atomistic simulation methods, the established atomistic-continuum multi-scale approach possesses advantages in tackling atomic structures with high-accuracy and high-efficiency. Free vibration characteristics of single-walled boron nitride nanotubes with different boundary conditions, tube chiralities, lengths and radii are examined in case studies. In this research, it is pointed out that a critical radius exists for the evaluation of fundamental vibration frequencies of boron nitride nanotubes; opposite trends can be observed prior to and beyond the critical radius. Simulation results are presented and discussed.

Superconducting structure with layers of niobium nitride and aluminum nitride

DOEpatents

Murduck, James M.; Lepetre, Yves J.; Schuller, Ivan K.; Ketterson, John B.

1989-01-01

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources.

Epitaxy of GaN in high aspect ratio nanoscale holes over silicon substrate

NASA Astrophysics Data System (ADS)

Wang, Kejia; Wang, Anqi; Ji, Qingbin; Hu, Xiaodong; Xie, Yahong; Sun, Ying; Cheng, Zhiyuan

2017-12-01

Dislocation filtering in gallium nitride (GaN) by epitaxial growth through patterned nanoscale holes is studied. GaN grown from extremely high aspect ratio holes by metalorganic chemical vapor deposition is examined by transmission electron microscopy and high-resolution transmission electron microscopy. This selective area epitaxial growth method with a reduced epitaxy area and an increased depth to width ratio of holes leads to effective filtering of dislocations within the hole and improves the quality of GaN significantly.

Superconducting structure with layers of niobium nitride and aluminum nitride

DOEpatents

Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

1989-07-04

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.

Temperature Measurement by a Nanoscale Electron Probe Using Energy Gain and Loss Spectroscopy

NASA Astrophysics Data System (ADS)

Idrobo, Juan Carlos; Lupini, Andrew R.; Feng, Tianli; Unocic, Raymond R.; Walden, Franklin S.; Gardiner, Daniel S.; Lovejoy, Tracy C.; Dellby, Niklas; Pantelides, Sokrates T.; Krivanek, Ondrej L.

2018-03-01

Heat dissipation in integrated nanoscale devices is a major issue that requires the development of nanoscale temperature probes. Here, we report the implementation of a method that combines electron energy gain and loss spectroscopy to provide a direct measurement of the local temperature in the nanoenvironment. Loss and gain peaks corresponding to an optical-phonon mode in boron nitride were measured from room temperature to ˜1600 K . Both loss and gain peaks exhibit a shift towards lower energies as the sample is heated up. First-principles calculations of the temperature-induced phonon frequency shifts provide insights into the origin of this effect and confirm the experimental data. The experiments and theory presented here open the doors to the study of anharmonic effects in materials by directly probing phonons in the electron microscope.

Deposition and characterization of aluminum magnesium boride thin film coatings

NASA Astrophysics Data System (ADS)

Tian, Yun

Boron-rich borides are a special group of materials possessing complex structures typically comprised of B12 icosahedra. All of the boron-rich borides sharing this common structural unit exhibit a variety of exceptional physical and electrical properties. In this work, a new ternary boride compound AlMgB14, which has been extensively studied in bulk form due to its novel mechanical properties, was fabricated into thin film coatings by pulsed laser deposition (PLD) technology. The effect of processing conditions (laser operating modes, vacuum level, substrate temperature, and postannealing, etc.) on the composition, microstructure evolution, chemical bonding, and surface morphology of AlMgB14 thin film coatings has been investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), atomic force microscopy (AFM) and Fourier transform infrared (FTIR) spectrometry; the mechanical, electrical, and optical properties of AlMgB14 thin films have been characterized by nanoindentation, four-point probe, van der Pauw Hall measurement, activation energy measurement, and UV-VIS-NIR spectrophotometer. Experimental results show that AlMgB14 films deposited in the temperature range of 300 K - 873 K are amorphous. Depositions under a low vacuum level (5 x 10-5 Torr) can introduce a significant amount of C and O impurities into AlMgB14 films and lead to a complex oxide glass structure. Orthorhombic AlMgB14 phase cannot be obtained by subsequent high temperature annealing. By contrast, the orthorhombic AlMgB 14 crystal structure can be attained via high temperature-annealing of AlMgB14 films deposited under a high vacuum level (< 3 x 10-6 Torr), accompanied by strong texture formation. Low vacuum level-as deposited AlMgB14 films have low hardness (10 GPa), but high vacuum level-as deposited AlMgB14 films exhibit an extremely high hardness (45 GPa - 51 GPa), and the higher deposition temperature results in still higher hardness

Antenna-coupled photon emission from hexagonal boron nitride tunnel junctions.

PubMed

Parzefall, M; Bharadwaj, P; Jain, A; Taniguchi, T; Watanabe, K; Novotny, L

2015-12-01

The ultrafast conversion of electrical signals to optical signals at the nanoscale is of fundamental interest for data processing, telecommunication and optical interconnects. However, the modulation bandwidths of semiconductor light-emitting diodes are limited by the spontaneous recombination rate of electron-hole pairs, and the footprint of electrically driven ultrafast lasers is too large for practical on-chip integration. A metal-insulator-metal tunnel junction approaches the ultimate size limit of electronic devices and its operating speed is fundamentally limited only by the tunnelling time. Here, we study the conversion of electrons (localized in vertical gold-hexagonal boron nitride-gold tunnel junctions) to free-space photons, mediated by resonant slot antennas. Optical antennas efficiently bridge the size mismatch between nanoscale volumes and far-field radiation and strongly enhance the electron-photon conversion efficiency. We achieve polarized, directional and resonantly enhanced light emission from inelastic electron tunnelling and establish a novel platform for studying the interaction of electrons with strongly localized electromagnetic fields.

Thermal transport in boron nitride nanotorus—towards a nanoscopic thermal shield

NASA Astrophysics Data System (ADS)

Loh, G. C.; Baillargeat, D.

2013-11-01

Nanotori, or nanorings, are topological variants of nanotubes and are conceived to have different properties from their tubular form. In this study, the toroidal arrangement of boron nitride is introduced. Using classical molecular dynamics simulations, the thermal behaviour (thermal conductivity and thermal stability) of the boron nitride nanotorus and its relationship with the structural characteristics are investigated. Its circumferential thermal rectification strength displays a linear dependence on the bending coefficient of the nanostructure. Surface kinks are relatively inconsequential on its circumferential mode of conduction, as compared to its axial sense. The circumferential conductivity in the diffusive regime is calculated to be approximately 10 W/m K, while the axial conductivity is more than tenfold of this value. All nanotori with different toroidal characters show excellent thermal stability at extremely high temperatures approaching 3400 K. With consideration to its favourable properties, a thermal shield made up of a parallel row of nanotori is proposed as a nanoscale thermal insulation device.

Room-temperature ballistic transport in III-nitride heterostructures.

PubMed

Matioli, Elison; Palacios, Tomás

2015-02-11

Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. However, their application to RT ballistic devices is limited by their low optical phonon energies, close to KT at 300 K. In addition, the short electron mean-free-path at RT requires nanoscale devices for which surface effects are a limitation in these materials. We explore the unique properties of wide band-gap III-nitride semiconductors to demonstrate RT ballistic devices. A theoretical model is proposed to corroborate experimentally their optical phonon energy of 92 meV, which is ∼4× larger than in other III-V semiconductors. This allows RT ballistic devices operating at larger voltages and currents. An additional model is described to determine experimentally a characteristic dimension for ballistic transport of 188 nm. Another remarkable property is their short carrier depletion at device sidewalls, down to 13 nm, which allows top-down nanofabrication of very narrow ballistic devices. These results open a wealth of new systems and basic transport studies possible at RT.

Giant osmotic energy conversion measured in a single transmembrane boron nitride nanotube.

PubMed

Siria, Alessandro; Poncharal, Philippe; Biance, Anne-Laure; Fulcrand, Rémy; Blase, Xavier; Purcell, Stephen T; Bocquet, Lydéric

2013-02-28

New models of fluid transport are expected to emerge from the confinement of liquids at the nanoscale, with potential applications in ultrafiltration, desalination and energy conversion. Nevertheless, advancing our fundamental understanding of fluid transport on the smallest scales requires mass and ion dynamics to be ultimately characterized across an individual channel to avoid averaging over many pores. A major challenge for nanofluidics thus lies in building distinct and well-controlled nanochannels, amenable to the systematic exploration of their properties. Here we describe the fabrication and use of a hierarchical nanofluidic device made of a boron nitride nanotube that pierces an ultrathin membrane and connects two fluid reservoirs. Such a transmembrane geometry allows the detailed study of fluidic transport through a single nanotube under diverse forces, including electric fields, pressure drops and chemical gradients. Using this device, we discover very large, osmotically induced electric currents generated by salinity gradients, exceeding by two orders of magnitude their pressure-driven counterpart. We show that this result originates in the anomalously high surface charge carried by the nanotube's internal surface in water at large pH, which we independently quantify in conductance measurements. The nano-assembly route using nanostructures as building blocks opens the way to studying fluid, ionic and molecule transport on the nanoscale, and may lead to biomimetic functionalities. Our results furthermore suggest that boron nitride nanotubes could be used as membranes for osmotic power harvesting under salinity gradients.

Wet-chemical synthesis of nanoscale iron boride, XAFS analysis and crystallisation to α-FeB.

PubMed

Rades, Steffi; Kornowski, Andreas; Weller, Horst; Albert, Barbara

2011-06-20

The reaction of lithium tetrahydridoborate and iron bromide in high boiling ether as reaction medium produces an ultrafine, pyrophoric and magnetic precipitate. X-ray and electron diffraction proved the product to be amorphous. According to X-ray absorption fine structure spectroscopy (XAFS) the precipitate has FeB structure up to nearly two coordination spheres around an iron absorber atom. Transmission electron microscopy (TEM) confirms the ultrafine powder to be nanoscale. Subsequent annealing at 450 °C causes the atoms to arrange in a more distinct FeB structure, and further thermal treatment to 1050 °C extends the local structure to the α-modification of FeB. Between 1050 °C and 1500 °C α-FeB is transformed into β-FeB. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Suppression of Boride Formation in Transient Liquid Phase Bonding of Pairings of Parent Superalloy Materials with Different Compositions and Grain Structures and Resulting Mechanical Properties

NASA Astrophysics Data System (ADS)

Steuer, Susanne; Singer, Robert F.

2014-07-01

Two Ni-based superalloys, columnar grained Alloy 247 and single-crystal PWA1483, are joined by transient liquid phase bonding using an amorphous brazing foil containing boron as a melting point depressant. At lower brazing temperatures, two different morphologies of borides develop in both base materials: plate-like and globular ones. Their ratio to each other is temperature dependent. With very high brazing temperatures, the deleterious boride formation in Alloy 247 can be totally avoided, probably because the three-phase-field moves to higher alloying element contents. For the superalloy PWA1483, the formation of borides cannot be completely avoided at high brazing temperatures as incipient melting occurs. During subsequent solidification of these areas, Chinese-script-like borides precipitate. The mechanical properties (tensile tests at room and elevated temperatures and short-term creep rupture tests at elevated temperatures) for brazed samples without boride precipitation are very promising. Tensile strengths and creep times to 1 pct strain are comparable, respectively, higher than the ones of the weaker parent material for all tested temperatures and creep conditions (from 90 to 100 pct rsp. 175 to 250 pct).

A study on the formation of solid state nanoscale materials using polyhedral borane compounds

NASA Astrophysics Data System (ADS)

Romero, Jennifer V.

The formation of boron containing materials using a variety of methods was explored. The pyrolysis of a metal boride precursor solution can be accomplished using a one-source method by combining TiCl4, B10H 14 and CH3CN in one reaction vessel and pyrolyzing it at temperatures above 900 °C. Amorphous dark blue colored films were obtained after the pyrolysis reactions. Well-defined spherical shaped grains or particles were observed by SEM. The amorphous films generated contained titanium, however, the determination of the boron content of the films was inconclusive. This one pot method making metal boride thin films has the advantage of being able to dictate the stoichiometry of the reactants. Another part of this work represents the first report of both the use of metal boride materials and the use of a titanium-based compound for the formation of nanotubes. This method provides a facile method for generating well-formed boron-containing carbon nanotubes in a "one-pot" process through an efficient aerosol process. The formation of metal boride corrosion resistant layers was also explored. It was shown that metallic substrates can be effectively boronized using paste mixtures containing boron carbide and borax. The formation of a Fe4B 2 iron boride phase was achieved, however, this iron boride phase does not give enough corrosion protection. The formation of a corrosion resistant metal boride coating with strong adhesion was accomplished by boronization of a thermal sprayed nickel layer on the surface of steel. Surfactants were explored as possible nanoreactors in which metal boride nanoparticles could be formed to use as nanotube growth catalyst via room temperature reaction. Different surfactants were used, but none of them successfully generated very well dispersed metal boride nanoparticles. Nanoparticles with varying shapes and sizes were generated which were highly amorphous. The carboxylic acid derivative of closo-C2B 10 cages was explored as a ligand in the

Boron nitride composites

DOEpatents

Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

2017-02-21

According to one embodiment, a composite product includes: a matrix material including hexagonal boron nitride and one or more borate binders; and a plurality of cubic boron nitride particles dispersed in the matrix material. According to another embodiment, a composite product includes: a matrix material including hexagonal boron nitride and amorphous boron nitride; and a plurality of cubic boron nitride particles dispersed in the matrix material.

Multifunctional Ceramic Nanostructured Coatings

DTIC Science & Technology

2010-12-01

silicon carbide composites // J. Europ. Cer. Soc. − 2004. − Vol. 24. − P. 2169−2179. 22. Yu. P. Udalov, E. E. Valova, S. S. Ordanian. Fabrication and...by the titanium and tungsten borides and carbides . The analysis was done using the X-ray and electron-optical methods. This information expands our...coating compositions should be based on limited solubility materials. Such systems include carbides , nitrides, borides and silicides based on

Effects of structural modification on reliability of nanoscale nitride HEMTs

NASA Astrophysics Data System (ADS)

Gaddipati, Vamsi Mohan

AlGaN based nanoscale high-electron-mobility transistors (HEMTs) are the next generation of transistor technology that features the unique combination of higher power, wider bandwidth, low noise, higher efficiency, and temperature/radiation hardness than conventional AlGaAs and Si based technologies. However, as evidenced by recent stress tests, reliability of these devices (characterized by a gradual decrease in the output current/power leading to failure of the device in just tens of hours of operation) remains a major concern. Although, in these tests, physical damages were clearly visible in the device, the root cause and nature of these damages have not yet been fully assessed experimentally. Therefore, a comprehensive theoretical study of the physical mechanisms responsible for degradation of AlGaN HEMTs is essential before these devices are deployed in targeted applications. The main objective of the proposed research is to computationally investigate how degradation of state-of-the-art nanoscale AlGaN HEMTs is governed by an intricate and dynamical coupling of thermo-electromechanical processes at different length (atoms-to-transistor) and time (femtosecondto- hours) scales while operating in high voltage, large mechanical, and high temperature/radiation stresses. This work centers around a novel hypotheses as follows: High voltage applied to AlGaN HEMT causes excessive internal heat dissipation, which triggers gate metal diffusion into the semiconducting barrier layer and structural modifications (defect ii formation) leading to diminished polarization induced charge density and output current. Since the dynamical system to be studied is complex, chaotic (where the evolution rule is guided by atomicity of the underlying material), and involve coupled physical processes, an in-house multiscale simulator (QuADS 3-D) has been employed and augmented, where material parameters are obtained atomistically using firstprinciples, structural relaxation and defect

Development of high temperature stable Ohmic and Schottky contacts on n-gallium nitride

NASA Astrophysics Data System (ADS)

Khanna, Rohit

In this work the effort was made to towards develop and investigate high temperature stable Ohmic and Schottky contacts for n type GaN. Various borides and refractory materials were incorporated in metallization scheme to best attain the desired effect of minimal degradation of contacts when placed at high temperatures. This work focuses on achieving a contact scheme using different borides which include two Tungsten Borides (namely W2B, W2B 5), Titanium Boride (TiB2), Chromium Boride (CrB2) and Zirconium Boride (ZrB2). Further a high temperature metal namely Iridium (Ir) was evaluated as a potential contact to n-GaN, as part of continuing improved device technology development. The main goal of this project was to investigate the most promising boride-based contact metallurgies on GaN, and finally to fabricate a High Electron Mobility Transistor (HEMT) and compare its reliability to a HEMT using present technology contact. Ohmic contacts were fabricated on n GaN using borides in the metallization scheme of Ti/Al/boride/Ti/Au. The characterization of the contacts was done using current-voltage measurements, scanning electron microscopy (SEM) and Auger Electron Spectroscopy (AES) measurements. The contacts formed gave specific contact resistance of the order of 10-5 to 10-6 Ohm-cm2. A minimum contact resistance of 1.5x10-6 O.cm 2 was achieved for the TiB2 based scheme at an annealing temperature of 850-900°C, which was comparable to a regular ohmic contact of Ti/Al/Ni/Au on n GaN. When some of borides contacts were placed on a hot plate or in hot oven for temperature ranging from 200°C to 350°C, the regular metallization contacts degraded before than borides ones. Even with a certain amount of intermixing of the metallization scheme the boride contacts showed minimal roughening and smoother morphology, which, in terms of edge acuity, is crucial for very small gate devices. Schottky contacts were also fabricated and characterized using all the five boride

Nanoscale Tailoring of the Polarization Properties of Dilute-Nitride Semiconductors via H-Assisted Strain Engineering

NASA Astrophysics Data System (ADS)

Felici, Marco; Birindelli, Simone; Trotta, Rinaldo; Francardi, Marco; Gerardino, Annamaria; Notargiacomo, Andrea; Rubini, Silvia; Martelli, Faustino; Capizzi, Mario; Polimeni, Antonio

2014-12-01

In dilute-nitride semiconductors, the possibility to selectively passivate N atoms by spatially controlled hydrogen irradiation allows for tailoring the effective N concentration of the host—and, therefore, its electronic and structural properties—with a precision of a few nanometers. In the present work, this technique is applied to the realization of ordered arrays of GaAs1 -xNx/GaAs1 -xNx∶H wires oriented at different angles with respect to the crystallographic axes of the material. The creation of a strongly anisotropic strain field in the plane of the sample, due to the lattice expansion of the fully hydrogenated regions surrounding the GaAs1 -xNx wires, is directly responsible for the peculiar polarization properties observed for the wire emission. Temperature-dependent polarization-resolved microphotoluminescence measurements, indeed, reveal a nontrivial dependence of the degree of linear polarization on the wire orientation, with maxima for wires parallel to the [110] and [1 1 ¯ 0 ] directions and a pronounced minimum for wires oriented along the [100] axis. In addition, the polarization direction is found to be precisely perpendicular to the wire when the latter is oriented along high-symmetry crystal directions, whereas significant deviations from a perfect orthogonality are measured for all other wire orientations. These findings, which are well reproduced by a theoretical model based on finite-element calculations of the strain profile of our GaAs1 -xNx/GaAs1 -xNx∶H heterostructures, demonstrate our ability to control the polarization properties of dilute-nitride micro- and nanostructures via H-assisted strain engineering. This additional degree of freedom may prove very useful in the design and optimization of innovative photonic structures relying on the integration of dilute-nitride-based light emitters with photonic crystal microcavities.

Revealing Nanoscale Passivation and Corrosion Mechanisms of Reactive Battery Materials in Gas Environments.

PubMed

Li, Yuzhang; Li, Yanbin; Sun, Yongming; Butz, Benjamin; Yan, Kai; Koh, Ai Leen; Zhao, Jie; Pei, Allen; Cui, Yi

2017-08-09

Lithium (Li) metal is a high-capacity anode material (3860 mAh g -1 ) that can enable high-energy batteries for electric vehicles and grid-storage applications. However, Li metal is highly reactive and repeatedly consumed when exposed to liquid electrolyte (during battery operation) or the ambient environment (throughout battery manufacturing). Studying these corrosion reactions on the nanoscale is especially difficult due to the high chemical reactivity of both Li metal and its surface corrosion films. Here, we directly generate pure Li metal inside an environmental transmission electron microscope (TEM), revealing the nanoscale passivation and corrosion process of Li metal in oxygen (O 2 ), nitrogen (N 2 ), and water vapor (H 2 O). We find that while dry O 2 and N 2 (99.9999 vol %) form uniform passivation layers on Li, trace water vapor (∼1 mol %) disrupts this passivation and forms a porous film on Li metal that allows gas to penetrate and continuously react with Li. To exploit the self-passivating behavior of Li in dry conditions, we introduce a simple dry-N 2 pretreatment of Li metal to form a protective layer of Li nitride prior to battery assembly. The fast ionic conductivity and stable interface of Li nitride results in improved battery performance with dendrite-free cycling and low voltage hysteresis. Our work reveals the detailed process of Li metal passivation/corrosion and demonstrates how this mechanistic insight can guide engineering solutions for Li metal batteries.

Experimental and theoretical screening of nanoscale oxide reactivity with LiBH4

NASA Astrophysics Data System (ADS)

Opalka, S. M.; Tang, X.; Laube, B. L.; Vanderspurt, T. H.

2009-05-01

Experimentation, thermodynamic modeling, and atomic modeling were combined to screen the reactivity of SiO2, Al2O3, and ZrO2 nanoscale oxides with LiBH4. Equilibrium thermodynamic modeling showed that the reactions of oxides with LiBH4 could lead to formation of stable Li-bearing oxide and metal boride phases. Experimentation was conducted to evaluate the discharge/recharge reaction products of nanoscale oxide-LiBH4 mixtures. Thermal gravimetric analyses-mass spectroscopy and x-ray diffraction revealed significant SiO2 destabilization of LiBH4 dehydrogenation, resulting in the formation of lithium silicate and boric acid. A smaller amount of lithium metaborate and boric acid was formed with Al2O3. No destabilization products were observed with ZrO2. Density functional theory atomic modeling predicted much stronger LiBH4 interfacial adsorption on the SiO2 and Al2O3 surfaces than on the ZrO2 surface, which was consistent with the experimental findings. Following dehydrogenation, interfacial Li atoms were predicted to strongly adsorb on the oxide surfaces effectively competing with LiH formation. The interfacial Li interactions with Al2O3 and ZrO2 were equal in strength in the fully hydrided and dehydrided states, so that their predicted net effect on LiBH4 dehydrogenation was insignificant. Zirconia was selected for nanoframework development based on the combined observations of compatibility and weaker associative interactions with LiBH4.

Nitride alloy layer formation of duplex stainless steel using nitriding process

NASA Astrophysics Data System (ADS)

Maleque, M. A.; Lailatul, P. H.; Fathaen, A. A.; Norinsan, K.; Haider, J.

2018-01-01

Duplex stainless steel (DSS) shows a good corrosion resistance as well as the mechanical properties. However, DSS performance decrease as it works under aggressive environment and at high temperature. At the mentioned environment, the DSS become susceptible to wear failure. Surface modification is the favourable technique to widen the application of duplex stainless steel and improve the wear resistance and its hardness properties. Therefore, the main aim of this work is to nitride alloy layer on the surface of duplex stainless steel by the nitriding process temperature of 400°C and 450°C at different time and ammonia composition using a horizontal tube furnace. The scanning electron microscopy and x-ray diffraction analyzer are used to analyse the morphology, composition and the nitrided alloy layer for treated DSS. The micro hardnesss Vickers tester was used to measure hardness on cross-sectional area of nitrided DSS. After nitriding, it was observed that the hardness performance increased until 1100 Hv0.5kgf compared to substrate material of 250 Hv0.5kgf. The thickness layer of nitride alloy also increased from 5μm until 100μm due to diffusion of nitrogen on the surface of DSS. The x-ray diffraction results showed that the nitride layer consists of iron nitride, expanded austenite and chromium nitride. It can be concluded that nitride alloy layer can be produced via nitriding process using tube furnace with significant improvement of microstructural and hardness properties.

Boron-Based Hydrogen Storage: Ternary Borides and Beyond

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vajo, John J.

DOE continues to seek reversible solid-state hydrogen materials with hydrogen densities of ≥11 wt% and ≥80 g/L that can deliver hydrogen and be recharged at moderate temperatures (≤100 °C) and pressures (≤100 bar) enabling incorporation into hydrogen storage systems suitable for transportation applications. Boron-based hydrogen storage materials have the potential to meet the density requirements given boron’s low atomic weight, high chemical valance, and versatile chemistry. However, the rates of hydrogen exchange in boron-based compounds are thus far much too slow for practical applications. Although contributing to the high hydrogen densities, the high valance of boron also leads to slowmore » rates of hydrogen exchange due to extensive boron-boron atom rearrangements during hydrogen cycling. This rearrangement often leads to multiple solid phases occurring over hydrogen release and recharge cycles. These phases must nucleate and react with each other across solid-solid phase boundaries leading to energy barriers that slow the rates of hydrogen exchange. This project sought to overcome the slow rates of hydrogen exchange in boron-based hydrogen storage materials by minimizing the number of solid phases and the boron atom rearrangement over a hydrogen release and recharge cycle. Two novel approaches were explored: 1) developing matched pairs of ternary borides and mixed-metal borohydrides that could exchange hydrogen with only one hydrogenated phase (the mixed-metal borohydride) and only one dehydrogenated phase (the ternary boride); and 2) developing boranes that could release hydrogen by being lithiated using lithium hydride with no boron-boron atom rearrangement.« less

Structure of superhard tungsten tetraboride: A missing link between MB2 and MB12 higher borides

PubMed Central

Lech, Andrew T.; Turner, Christopher L.; Mohammadi, Reza; Tolbert, Sarah H.; Kaner, Richard B.

2015-01-01

Superhard metals are of interest as possible replacements with enhanced properties over the metal carbides commonly used in cutting, drilling, and wear-resistant tooling. Of the superhard metals, the highest boride of tungsten—often referred to as WB4 and sometimes as W1–xB3—is one of the most promising candidates. The structure of this boride, however, has never been fully resolved, despite the fact that it was discovered in 1961—a fact that severely limits our understanding of its structure–property relationships and has generated increasing controversy in the literature. Here, we present a new crystallographic model of this compound based on refinement against time-of-flight neutron diffraction data. Contrary to previous X-ray–only structural refinements, there is strong evidence for the presence of interstitial arrangements of boron atoms and polyhedral bonding. The formation of these polyhedra—slightly distorted boron cuboctahedra—appears to be dependent upon the defective nature of the tungsten-deficient metal sublattice. This previously unidentified structure type has an intermediary relationship between MB2 and MB12 type boride polymorphs. Manipulation of the fractionally occupied metal and boron sites may provide insight for the rational design of new superhard metals. PMID:25733870

Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) Nanorods Superlattice (SL)

DTIC Science & Technology

2006-03-29

Final Report (Technical) 3. DATES COVERED 29-03-2005 to 29-05-2006 4. TITLE AND SUBTITLE Indium Gallium Nitride/ Gallium Nitride (InGaN/GaN...Institution: Quantum functional Semiconductor Research Center (QSRC), Dongguk University - Title of project: Indium Gallium Nitride/ Gallium Nitride...Accepted with minor revision Indium Gallium Nitride / Gallium Nitride (InGaN/ GaN) Nanorods Superlattice (SL) Abstract The growth condition, electrical

Modeling and Simulation of III-Nitride-Based Solar Cells using NextnanoRTM

NASA Astrophysics Data System (ADS)

Refaei, Malak

Nextnano3 software is a well-known package for simulating semiconductor band-structures at the nanoscale and predicting the general electronic structure. In this work, it is further demonstrated as a viable tool for the simulation of III-nitride solar cells. In order to prove this feasibility, the generally accepted solar cell simulation package, PC1D, was chosen for comparison. To critique the results from both PC1D and Nextnano3, the fundamental drift-diffusion equations were used to calculate the performance of a simple p-n homojunction solar cell device analytically. Silicon was picked as the material for this comparison between the outputs of the two simulators as well as the results of the drift-diffusion equations because it is a well-known material in both software tools. After substantiating the capabilities of Nextnano3 for the simulation solar cells, an InGaN single-junction solar cell was simulated. The effects of various indium compositions and device structures on the performance of this InGaN p-n homojunction solar cell was then investigated using Nextnano 3 as a simulation tool. For single-junction devices with varying bandgap, an In0.6Ga0.4N device with a bandgap of 1.44 eV was found to be the optimum. The results of this research demonstrate that the Nextnano3 software can be used to usefully simulate solar cells in general, and III-nitride solar cells specifically, for future study of nanoscale structured devices.

Dilute phosphide nitride materials as photocathodes for electrochemical solar energy conversion

NASA Astrophysics Data System (ADS)

Parameshwaran, Vijay; Xu, Xiaoqing; Kang, Yangsen; Harris, James; Wong, H.-S. Philip; Clemens, Bruce

2013-03-01

Dilute nitride materials have been used in a variety of III-V photonic devices, but have not been significantly explored in photoelectrochemical applications. This work focuses on using dilute phosphide nitride materials of the form (Al,In)P1-xNx as photocathodes for the generation of hydrogen fuel from solar energy. Heteroepitaxial MOCVD growth of AlPN thin films on GaP yields high quality material with a direct bandgap energy of 2.218 eV. Aligned epitaxial growth of InP and GaP nanowires on InP and Si substrates, respectively, provides a template for designing nanostructured photocathodes over a large area. Electrochemical testing of a AlPN/GaP heterostructure electrode yields up to a sixfold increase in photocurrent enhancement under blue light illumination as compared to a GaP electrode. Additionally, the AlPN/GaP electrodes exhibit no degradation in performance after galvanostatic biasing over time. These results show that (Al,In)P1-xNx is a promising materials system for use in nanoscale photocathode structures.

Effect of polymer residues on the electrical properties of large-area graphene–hexagonal boron nitride planar heterostructures

DOE PAGES

Voyloy, Dimitry; Lassiter, Matthew G.; Sokolov, Alexei P.; ...

2017-06-19

Polymer residue plays an important role in the performance of 2D heterostructured materials. Herein, we study the effect of polymer residual impurities on the electrical properties of graphene–boron nitride planar heterostructures. Large-area graphene (Gr) and hexagonal boron nitride (h-BN) monolayers were synthesized using chemical vapor deposition techniques. Atomic van-der-Waals heterostructure layers based on varied configurations of Gr and h-BN layers were assembled. The average interlayer resistance of the heterojunctions over a 1 cm 2 area for several planar heterostructure configurations was assessed by impedance spectroscopy and modeled by equivalent electrical circuits. As a result, conductive AFM measurements showed that themore » presence of polymer residues on the surface of the Gr and h-BN monolayers resulted in significant resistance deviations over nanoscale regions.« less

Effect of polymer residues on the electrical properties of large-area graphene–hexagonal boron nitride planar heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Voyloy, Dimitry; Lassiter, Matthew G.; Sokolov, Alexei P.

Polymer residue plays an important role in the performance of 2D heterostructured materials. Herein, we study the effect of polymer residual impurities on the electrical properties of graphene–boron nitride planar heterostructures. Large-area graphene (Gr) and hexagonal boron nitride (h-BN) monolayers were synthesized using chemical vapor deposition techniques. Atomic van-der-Waals heterostructure layers based on varied configurations of Gr and h-BN layers were assembled. The average interlayer resistance of the heterojunctions over a 1 cm 2 area for several planar heterostructure configurations was assessed by impedance spectroscopy and modeled by equivalent electrical circuits. As a result, conductive AFM measurements showed that themore » presence of polymer residues on the surface of the Gr and h-BN monolayers resulted in significant resistance deviations over nanoscale regions.« less

Methods of forming boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J

A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately 100.degree. C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boronmore » nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.« less

Microstructure and mechanical properties of Ni and Fe-base boride-dispersion-strengthened microcrystalline alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wade, C.S.; Park, H.G.; Hoagland, R.G.

This paper considers the relation between microstructure and mechanical properties of two Ni-base and two Fe-base Boride-Dispersion-Strengthened Microcrystalline (BDSM) alloys. In these very fine grained materials the borides were primarily Cr, Mo, and MoFe in a fcc matrix in three of the alloys, and a bcc in one of the Fe-base alloys. Strength data and resistance to stress corrosion cracking are reported and, in the latter case, extraordinary resistance to SCC in NaCl, Na{sub 2}S{sub 2}O{sub 3} and boiling MgCl{sub 2} environments was observed in every case. The fcc BDSM alloys also demonstrated excellent thermal stability in terms of strengthmore » and fracture roughness up to 1000 C. The bcc alloy suffered severe loss of toughness. The fracture mode involved ductile rupture in all alloys and they display a reasonably linear correlation between K{sub Ic} and the square root of particle spacing.« less

Superabrasive boride and a method of preparing the same by mechanical alloying and hot pressing

DOEpatents

Cook, Bruce A.; Harringa, Joel L.; Russell, Alan M.

2002-08-13

A ceramic material which is an orthorhombic boride of the general formula: AlMgB.sub.14 :X, with X being a doping agent. The ceramic is a superabrasive, and in most instances provides a hardness of 40 GPa or greater.

Ab Initio Predictions of Strong Interfaces in Transition-Metal Carbides and Nitrides for Superhard Nanocomposite Coating Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Chongze; Huang, Jingsong; Sumpter, Bobby G.

Conceiving strong interfaces represents an effective direction in the development of superhard nanocomposite materials for practical applications in protective coatings. Additionally, in the pursuit of engineering strong nanoscale interfaces between cubic rock-salt (B1) domains, we investigate using density functional theory (DFT) coherent interface models designed based on hexagonal (HX) NiAs and WC structures, as well as experiment. The DFT screening of a collection of transition-metal (M = Zr, Hf, Nb, Ta) carbides and nitrides indicates that the interface models provided by the HX polymorphs store little coherency strain and develop an energetic advantage as the valence-electron concentration increases. Finally, ourmore » result suggests that harnessing the polymorphism encountered in transition-metal (M = Zr, Hf, Nb, Ta) carbides and nitrides for interface design represents a promising strategy for advancing superhard nanomaterials.« less

Ab Initio Predictions of Strong Interfaces in Transition-Metal Carbides and Nitrides for Superhard Nanocomposite Coating Applications

DOE PAGES

Hu, Chongze; Huang, Jingsong; Sumpter, Bobby G.; ...

2018-04-19

Conceiving strong interfaces represents an effective direction in the development of superhard nanocomposite materials for practical applications in protective coatings. Additionally, in the pursuit of engineering strong nanoscale interfaces between cubic rock-salt (B1) domains, we investigate using density functional theory (DFT) coherent interface models designed based on hexagonal (HX) NiAs and WC structures, as well as experiment. The DFT screening of a collection of transition-metal (M = Zr, Hf, Nb, Ta) carbides and nitrides indicates that the interface models provided by the HX polymorphs store little coherency strain and develop an energetic advantage as the valence-electron concentration increases. Finally, ourmore » result suggests that harnessing the polymorphism encountered in transition-metal (M = Zr, Hf, Nb, Ta) carbides and nitrides for interface design represents a promising strategy for advancing superhard nanomaterials.« less

Thermophysical and Electronic Properties Information Analysis Center (TEPIAC): A Continuing Systematic Program on Tables of Thermophysical and Electronic Properties of Materials.

DTIC Science & Technology

1977-02-01

oxides and their mixtures, arsenides, borides, bromides , carbides , chlorides , fluoride s, nitride s, phosphides, silicides , sulfides , tellurides...ivity of alkali elements (lithium , sodium , potassium , rubi- dium , ces ium , and francium) and contains recomme nded reference values generated

Crystallographic alignment of high-density gallium nitride nanowire arrays.

PubMed

Kuykendall, Tevye; Pauzauskie, Peter J; Zhang, Yanfeng; Goldberger, Joshua; Sirbuly, Donald; Denlinger, Jonathan; Yang, Peidong

2004-08-01

Single-crystalline, one-dimensional semiconductor nanostructures are considered to be one of the critical building blocks for nanoscale optoelectronics. Elucidation of the vapour-liquid-solid growth mechanism has already enabled precise control over nanowire position and size, yet to date, no reports have demonstrated the ability to choose from different crystallographic growth directions of a nanowire array. Control over the nanowire growth direction is extremely desirable, in that anisotropic parameters such as thermal and electrical conductivity, index of refraction, piezoelectric polarization, and bandgap may be used to tune the physical properties of nanowires made from a given material. Here we demonstrate the use of metal-organic chemical vapour deposition (MOCVD) and appropriate substrate selection to control the crystallographic growth directions of high-density arrays of gallium nitride nanowires with distinct geometric and physical properties. Epitaxial growth of wurtzite gallium nitride on (100) gamma-LiAlO(2) and (111) MgO single-crystal substrates resulted in the selective growth of nanowires in the orthogonal [1\\[Evec]0] and [001] directions, exhibiting triangular and hexagonal cross-sections and drastically different optical emission. The MOCVD process is entirely compatible with the current GaN thin-film technology, which would lead to easy scale-up and device integration.

Slater-Pauling behavior within quaternary intermetallic borides of the Ti{sub 3}Co{sub 5}B{sub 2} structure-type

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burghaus, Jens; Dronskowski, Richard, E-mail: drons@HAL9000.ac.rwth-aachen.d; Miller, Gordon J.

2009-10-15

First-principles, density-functional studies of several intermetallic borides of the general type M{sub 2}M'Ru{sub 5-n}Rh{sub n}B{sub 2} (n=0-5; M=Sc, Ti, Nb; M'=Fe, Co) show that the variation in saturation magnetic moment with valence-electron count follows a Slater-Pauling curve, with a maximum moment occurring typically at 66 valence electrons. The magnetic moments in these compounds occur primarily from the 3d electrons of the magnetically active M' sites, with some contribution from the Ru/Rh sites via magnetic polarization. Electronic DOS curves reveal that a rigid-band approach is a reasonable approximation for the estimation of saturation moments and the analysis of orbital interactions inmore » this family of complex borides. COHP analyses of the M'-M' orbital interactions indicate optimized interactions in the minority spin states for Co-containing phases, but strong bonding interactions remaining in Fe-containing phases. - Graphical abstract: Theoretically determined (spin-polarized LMTO-GGA) local magnetic moments as a function of the chemical valence Z for various intermetallic borides.« less

Nanoscale thermal imaging of dissipation in quantum systems

NASA Astrophysics Data System (ADS)

Halbertal, D.; Cuppens, J.; Shalom, M. Ben; Embon, L.; Shadmi, N.; Anahory, Y.; Naren, H. R.; Sarkar, J.; Uri, A.; Ronen, Y.; Myasoedov, Y.; Levitov, L. S.; Joselevich, E.; Geim, A. K.; Zeldov, E.

2016-11-01

Energy dissipation is a fundamental process governing the dynamics of physical, chemical and biological systems. It is also one of the main characteristics that distinguish quantum from classical phenomena. In particular, in condensed matter physics, scattering mechanisms, loss of quantum information or breakdown of topological protection are deeply rooted in the intricate details of how and where the dissipation occurs. Yet the microscopic behaviour of a system is usually not formulated in terms of dissipation because energy dissipation is not a readily measurable quantity on the micrometre scale. Although nanoscale thermometry has gained much recent interest, existing thermal imaging methods are not sensitive enough for the study of quantum systems and are also unsuitable for the low-temperature operation that is required. Here we report a nano-thermometer based on a superconducting quantum interference device with a diameter of less than 50 nanometres that resides at the apex of a sharp pipette: it provides scanning cryogenic thermal sensing that is four orders of magnitude more sensitive than previous devices—below 1 μK Hz-1/2. This non-contact, non-invasive thermometry allows thermal imaging of very low intensity, nanoscale energy dissipation down to the fundamental Landauer limit of 40 femtowatts for continuous readout of a single qubit at one gigahertz at 4.2 kelvin. These advances enable the observation of changes in dissipation due to single-electron charging of individual quantum dots in carbon nanotubes. They also reveal a dissipation mechanism attributable to resonant localized states in graphene encapsulated within hexagonal boron nitride, opening the door to direct thermal imaging of nanoscale dissipation processes in quantum matter.

Crystalline boron nitride aerogels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.

This disclosure provides methods and materials related to boron nitride aerogels. For example, one aspect relates to a method for making an aerogel comprising boron nitride, comprising: (a) providing boron oxide and an aerogel comprising carbon; (b) heating the boron oxide to melt the boron oxide and heating the aerogel; (c) mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide; and (d) converting at least a portion of the carbon to boron nitride to obtain the aerogel comprising boron nitride. Another aspect relates to a method for making an aerogel comprising boron nitride, comprising heating boron oxidemore » and an aerogel comprising carbon under flow of a nitrogen-containing gas, wherein boron oxide vapor and the nitrogen-containing gas convert at least a portion of the carbon to boron nitride to obtain the aerogel comprising boron nitride.« less

Adhesion enhancement of titanium nitride coating on aluminum casting alloy by intrinsic microstructures

NASA Astrophysics Data System (ADS)

Nguyen, Chuong L.; Preston, Andrew; Tran, Anh T. T.; Dickinson, Michelle; Metson, James B.

2016-07-01

Aluminum casting alloys have excellent castability, high strength and good corrosion resistance. However, the presence of silicon in these alloys prevents surface finishing with conventional methods such as anodizing. Hard coating with titanium nitride can provide wear and corrosion resistances, as well as the aesthetic finish. A critical factor for a durable hard coating is its bonding with the underlying substrate. In this study, a titanium nitride layer was coated on LM25 casting alloy and a reference high purity aluminum substrate using Ion Assisted Deposition. Characterization of the coating and the critical interface was carried out by a range of complementing techniques, including SIMS, XPS, TEM, SEM/EDS and nano-indentation. It was observed that the coating on the aluminum alloy is stronger compared to that on the pure aluminum counterpart. Silicon particles in the alloy offers the reinforcement though mechanical interlocking at microscopic level, even with nano-scale height difference. This reinforcement overcomes the adverse effect caused by surface segregation of magnesium in aluminum casting alloys.

Coaxial group III-nitride nanowire photovoltaics.

PubMed

Dong, Yajie; Tian, Bozhi; Kempa, Thomas J; Lieber, Charles M

2009-05-01

Coaxial core/shell nanowires represent an important class of nanoscale building blocks with substantial potential for exploring new concepts and materials for solar energy conversion. Here, we report the first experimental realization of coaxial group III-nitride nanowire photovoltaic (PV) devices, n-GaN/i-In(x)Ga(1-x)N/p-GaN, where variation of indium mole fraction is used to control the active layer band gap and hence light absorption. Current-voltage data reveal clear diode characteristics with ideality factors from 3.9 to 5.6. Electroluminescence measurements demonstrate tunable emission from 556 to 371 nm and thus confirm band gap variations in the In(x)Ga(1-x)N active layer from 2.25 to 3.34 eV as In composition is varied. Simulated one-sun AM 1.5G illumination yielded open-circuit voltages (V(oc)) from 1.0 to 2.0 V and short-circuit current densities (J(sc)) from 0.39 to 0.059 mA/cm(2) as In composition is decreased from 0.27 to 0 and a maximum efficiency of approximately 0.19%. The n-GaN/i-In(x)Ga(1-x)N/p-GaN nanowire devices are highly robust and exhibit enhanced efficiencies for concentrated solar light illuminations as well as single nanowire J(sc) values as high as 390 mA/cm(2) under intense short-wavelength illumination. The ability to rationally tune the structure and composition of these core/shell III-nitride nanowires will make them a powerful platform for exploring nanoenabled PVs in the future.

Crystalline boron nitride aerogels

DOEpatents

Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.; Mickelson, William; Worsley, Marcus A.; Woo, Leta

2017-04-04

This disclosure provides methods and materials related to boron nitride aerogels. In one aspect, a material comprises an aerogel comprising boron nitride. The boron nitride has an ordered crystalline structure. The ordered crystalline structure may include atomic layers of hexagonal boron nitride lying on top of one another, with atoms contained in a first layer being superimposed on atoms contained in a second layer.

III-Nitride Nanowire Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wright, Jeremy Benjamin

2014-07-01

In recent years there has been a tremendous interest in nanoscale optoelectronic devices. Among these devices are semiconductor nanowires whose diameters range from 10-100 nm. To date, nanowires have been grown using many semiconducting material systems and have been utilized as light emitting diodes, photodetectors, and solar cells. Nanowires possess a relatively large index contrast relative to their dielectric environment and can be used as lasers. A key gure of merit that allows for nanowire lasing is the relatively high optical con nement factor. In this work, I discuss the optical characterization of 3 types of III-nitride nanowire laser devices.more » Two devices were designed to reduce the number of lasing modes to achieve singlemode operation. The third device implements low-group velocity mode lasing with a photonic crystal constructed of an array of nanowires. Single-mode operation is necessary in any application where high beam quality and single frequency operation is required. III-Nitride nanowire lasers typically operate in a combined multi-longitudinal and multi-transverse mode state. Two schemes are introduced here for controlling the optical modes and achieving single-mode op eration. The rst method involves reducing the diameter of individual nanowires to the cut-o condition, where only one optical mode propagates in the wire. The second method employs distributed feedback (DFB) to achieve single-mode lasing by placing individual GaN nanowires onto substrates with etched gratings. The nanowire-grating substrate acted as a distributed feedback mirror producing single mode operation at 370 nm with a mode suppression ratio (MSR) of 17 dB. The usage of lasers for solid state lighting has the potential to further reduce U.S. lighting energy usage through an increase in emitter e ciency. Advances in nanowire fabrication, speci cally a two-step top-down approach, have allowed for the demonstration of a multi-color array of lasers on a single chip that

Universal, In Situ Transformation of Bulky Compounds into Nanoscale Catalysts by High-Temperature Pulse.

PubMed

Xu, Shaomao; Chen, Yanan; Li, Yiju; Lu, Aijiang; Yao, Yonggang; Dai, Jiaqi; Wang, Yanbin; Liu, Boyang; Lacey, Steven D; Pastel, Glenn R; Kuang, Yudi; Danner, Valencia A; Jiang, Feng; Fu, Kun Kelvin; Hu, Liangbing

2017-09-13

The synthesis of nanoscale metal compound catalysts has attracted much research attention in the past decade. The challenges of preparation of the metal compound include the complexity of the synthesis process and difficulty of precise control of the reaction conditions. Herein, we report an in situ synthesis of nanoparticles via a high-temperature pulse method where the bulk material acts as the precursor. During the process of rapid heating and cooling, swift melting, anchoring, and recrystallization occur, resulting in the generation of high-purity nanoparticles. In our work, the cobalt boride (Co 2 B) nanoparticles with a diameter of 10-20 nm uniformly anchored on the reduced graphene oxide (rGO) nanosheets were successfully prepared using the high temperature pulse method. The as-prepared Co 2 B/rGO composite displayed remarkable electrocatalytic performance for the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER). We also prepared molybdenum disulfide (MoS 2 ) and cobalt oxide (Co 3 O 4 ) nanoparticles, thereby demonstrating that the high-temperature pulse is a universal method to synthesize ultrafine metal compound nanoparticles.

Amorphous nickel boride membrane on a platinum-nickel alloy surface for enhanced oxygen reduction reaction.

PubMed

He, Daping; Zhang, Libo; He, Dongsheng; Zhou, Gang; Lin, Yue; Deng, Zhaoxiang; Hong, Xun; Wu, Yuen; Chen, Chen; Li, Yadong

2016-08-09

The low activity of the oxygen reduction reaction in polymer electrolyte membrane fuel cells is a major barrier for electrocatalysis, and hence needs to be optimized. Tuning the surface electronic structure of platinum-based bimetallic alloys, a promising oxygen reduction reaction catalyst, plays a key role in controlling its interaction with reactants, and thus affects the efficiency. Here we report that a dealloying process can be utilized to experimentally fabricate the interface between dealloyed platinum-nickel alloy and amorphous nickel boride membrane. The coating membrane works as an electron acceptor to tune the surface electronic structure of the platinum-nickel catalyst, and this composite catalyst composed of crystalline platinum-nickel covered by amorphous nickel boride achieves a 27-times enhancement in mass activity relative to commercial platinum/carbon at 0.9 V for the oxygen reduction reaction performance. Moreover, this interactional effect between a crystalline surface and amorphous membrane can be readily generalized to facilitate the 3-times higher catalytic activity of commercial platinum/carbon.

Photocurrent generation in carbon nitride and carbon nitride/conjugated polymer composites.

PubMed

Byers, Joshua C; Billon, Florence; Debiemme-Chouvy, Catherine; Deslouis, Claude; Pailleret, Alain; Semenikhin, Oleg A

2012-09-26

The semiconductor and photovoltaic properties of carbon nitride (CNx) thin films prepared using a reactive magnetron cathodic sputtering technique were investigated both individually and as composites with an organic conjugated polymer, poly(2,2'-bithiophene) (PBT). The CNx films showed an increasing thickness as the deposition power and/or nitrogen content in the gas mixture increase. At low nitrogen content and low deposition power (25-50 W), the film structure was dominated by the abundance of the graphitic sp(2) regions, whereas at higher nitrogen contents and magnetron power CNx films started to demonstrate semiconductor properties, as evidenced by the occurrence of photoconductivity and the development of a space charge region. However, CNx films alone did not show any reproducible photovoltaic properties. The situation changed, however, when CNx was deposited onto conjugated PBT substrates. In this configuration, CNx was found to function as an acceptor material improving the photocurrent generation both in solution and in solid state photovoltaic devices, with the external quantum efficiencies reaching 1% at high nitrogen contents. The occurrence of the donor-acceptor charge transfer was further evidenced by suppression of the n-doping of the PBT polymer by CNx. Nanoscale atomic force microscopy (AFM) and current-sensing AFM data suggested that CNx may form a bulk heterojunction with PBT.

Nitride stabilized core/shell nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuttiyiel, Kurian Abraham; Sasaki, Kotaro; Adzic, Radoslav R.

Nitride stabilized metal nanoparticles and methods for their manufacture are disclosed. In one embodiment the metal nanoparticles have a continuous and nonporous noble metal shell with a nitride-stabilized non-noble metal core. The nitride-stabilized core provides a stabilizing effect under high oxidizing conditions suppressing the noble metal dissolution during potential cycling. The nitride stabilized nanoparticles may be fabricated by a process in which a core is coated with a shell layer that encapsulates the entire core. Introduction of nitrogen into the core by annealing produces metal nitride(s) that are less susceptible to dissolution during potential cycling under high oxidizing conditions.

PECVD silicon-rich nitride and low stress nitride films mechanical characterization using membrane point load deflection

NASA Astrophysics Data System (ADS)

Bagolini, Alvise; Picciotto, Antonino; Crivellari, Michele; Conci, Paolo; Bellutti, Pierluigi

2016-02-01

An analysis of the mechanical properties of plasma enhanced chemical vapor (PECVD) silicon nitrides is presented, using micro fabricated silicon nitride membranes under point load deflection. The membranes are made of PECVD silicon-rich nitride and low stress nitride films. The mechanical performance of the bended membranes is examined both with analytical models and finite element simulation in order to extract the elastic modulus and residual stress values. The elastic modulus of low stress silicon nitride is calculated using stress free analytical models, while for silicon-rich silicon nitride and annealed low stress silicon nitride it is estimated with a pre-stressed model of point-load deflection. The effect of annealing both in nitrogen and hydrogen atmosphere is evaluated in terms of residual stress, refractive index and thickness variation. It is demonstrated that a hydrogen rich annealing atmosphere induces very little change in low stress silicon nitride. Nitrogen annealing effects are measured and shown to be much higher in silicon-rich nitride than in low stress silicon nitride. An estimate of PECVD silicon-rich nitride elastic modulus is obtained in the range between 240-320 GPa for deposited samples and 390 GPa for samples annealed in nitrogen atmosphere. PECVD low stress silicon nitride elastic modulus is estimated to be 88 GPa as deposited and 320 GPa after nitrogen annealing.

Surface decoration through electrostatic interaction leading to enhanced reactivity: Low temperature synthesis of nanostructured chromium borides (CrB and CrB{sub 2})

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menaka,; Kumar, Bharat; Kumar, Sandeep

The present study describes a novel low temperature route at ambient pressure for the synthesis of nanocrystalline chromium borides (CrB and CrB{sub 2}) without using any flux or additives. The favorable and intimate mixing of nanoparticles of chromium acetate (Cr source) and boron forms an active chromium–boron precursor which decomposes at much lower temperature (400 °C) to form CrB (which is ∼1000 °C less than the known ambient pressure synthesis). The chromium acetate nanoparticles (∼5 nm) decorate the larger boron particles (150–200 nm) due to electrostatic interactions resulting from opposing surface charges of boron (zeta potential:+48.101 mV) and chromium acetatemore » (zeta potential:−4.021 mV) in ethanolic medium and is evident in the TEM micrographs. The above method leads to the formation of pure CrB film like structure at 400 °C and nanospheres (40–60 nm) at 600 °C. Also, chromium diboride (CrB{sub 2}) nanoparticles (25 nm) could be obtained at 1000 °C. - Graphical abstract: Variation of surface charge of reactants, precursor and the products, chromium borides (CrB and CrB{sub 2}). Highlights: ► Novel borothermal reduction process for synthesis of chromium boride. ► Significant lowering of reaction temperature to obtain nanocrystalline chromium boride. ► Enhanced reactivity due to appropriate surface interactions.« less

Random telegraph noise in 2D hexagonal boron nitride dielectric films

NASA Astrophysics Data System (ADS)

Ranjan, A.; Puglisi, F. M.; Raghavan, N.; O'Shea, S. J.; Shubhakar, K.; Pavan, P.; Padovani, A.; Larcher, L.; Pey, K. L.

2018-03-01

This study reports the observation of low frequency random telegraph noise (RTN) in a 2D layered hexagonal boron nitride dielectric film in the pre- and post-soft breakdown phases using conductive atomic force microscopy as a nanoscale spectroscopy tool. The RTN traces of the virgin and electrically stressed dielectric (after percolation breakdown) were compared, and the signal features were statistically analyzed using the Factorial Hidden Markov Model technique. We observe a combination of both two-level and multi-level RTN signals in h-BN, akin to the trends commonly observed for bulk oxides such as SiO2 and HfO2. Experimental evidence suggests frequent occurrence of unstable and anomalous RTN traces in 2D dielectrics which makes extraction of defect energetics challenging.

Nanotribological performance of fullerene-like carbon nitride films

NASA Astrophysics Data System (ADS)

Flores-Ruiz, Francisco Javier; Enriquez-Flores, Christian Ivan; Chiñas-Castillo, Fernando; Espinoza-Beltrán, Francisco Javier

2014-09-01

Fullerene-like carbon nitride films exhibit high elastic modulus and low friction coefficient. In this study, thin CNx films were deposited on silicon substrate by DC magnetron sputtering and the tribological behavior at nanoscale was evaluated using an atomic force microscope. Results show that CNx films with fullerene-like structure have a friction coefficient (CoF ∼ 0.009-0.022) that is lower than amorphous CNx films (CoF ∼ 0.028-0.032). Analysis of specimens characterized by X-ray photoelectron spectroscopy shows that films with fullerene-like structure have a higher number of sp3 CN bonds and exhibit the best mechanical properties with high values of elastic modulus (E > 180 GPa) and hardness (H > 20 GPa). The elastic recovery determined on specimens with a fullerene-like CNx structure was of 95% while specimens of amorphous CNx structure had only 75% elastic recovery.

Ultrahigh interlayer friction in multiwalled boron nitride nanotubes.

PubMed

Niguès, A; Siria, A; Vincent, P; Poncharal, P; Bocquet, L

2014-07-01

Friction at the nanoscale has revealed a wealth of behaviours that depart strongly from the long-standing macroscopic laws of Amontons-Coulomb. Here, by using a 'Christmas cracker'-type of system in which a multiwalled nanotube is torn apart between a quartz-tuning-fork-based atomic force microscope (TF-AFM) and a nanomanipulator, we compare the mechanical response of multiwalled carbon nanotubes (CNTs) and multiwalled boron nitride nanotubes (BNNTs) during the fracture and telescopic sliding of the layers. We found that the interlayer friction for insulating BNNTs results in ultrahigh viscous-like dissipation that is proportional to the contact area, whereas for the semimetallic CNTs the sliding friction vanishes within experimental uncertainty. We ascribe this difference to the ionic character of the BN, which allows charge localization. The interlayer viscous friction of BNNTs suggests that BNNT membranes could serve as extremely efficient shock-absorbing surfaces.

Method for preparing actinide nitrides

DOEpatents

Bryan, G.H.; Cleveland, J.M.; Heiple, C.R.

1975-12-01

Actinide nitrides, and particularly plutonium and uranium nitrides, are prepared by reacting an ammonia solution of an actinide compound with an ammonia solution of a reactant or reductant metal, to form finely divided actinide nitride precipitate which may then be appropriately separated from the solution. The actinide nitride precipitate is particularly suitable for forming nuclear fuels.

Photovoltaic cell

DOEpatents

Gordon, Roy G.; Kurtz, Sarah

1984-11-27

In a photovoltaic cell structure containing a visibly transparent, electrically conductive first layer of metal oxide, and a light-absorbing semiconductive photovoltaic second layer, the improvement comprising a thin layer of transition metal nitride, carbide or boride interposed between said first and second layers.

Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

NASA Technical Reports Server (NTRS)

Yajima, S.; Omori, M.; Hayashi, J.; Kayano, H.; Hamano, M.

1983-01-01

A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

Electroplating of the superconductive boride MgB2 from molten salts

NASA Astrophysics Data System (ADS)

Abe, Hideki; Yoshii, Kenji; Nishida, Kenji; Imai, Motoharu; Kitazawa, Hideaki

2005-02-01

An electroplating technique of the superconductive boride MgB2 onto graphite substrates is reported. Films of MgB2 with a thickness of tens micrometer were fabricated on the planar and curved surfaces of graphite substrates by means of electrolysis on a mixture of magnesium chloride, potassium chloride, sodium chloride, and magnesium borate fused at 600 °C under an Ar atmosphere. The electrical resistivity and magnetization measurements revealed that the electroplated MgB2 films undergo a superconducting transition with the critical temperature (Tc) of 36 K.

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

NASA Astrophysics Data System (ADS)

Biyikli, Necmi; Haider, Ali

2017-09-01

In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

Nanoscale adhesion interactions in carbon nanotube based systems and experimental study of the mechanical properties of carbon and boron nitride nanotubes

NASA Astrophysics Data System (ADS)

Zheng, Meng

Part I: Carbon nanotubes (CNTs) are a type of 1D nanostructures, which possess extraordinary mechanical, electrical, thermal, and chemical properties and are promising for a number of applications. For many of their applications, CNTs will be assembled into micro or macro-scale structures (e.g. thin-films and yarns), or integrated with other bulk materials to form heterogeneous material systems and devices (e.g. nanocomposites and solid-state electronics). The interfaces formed among CNTs themselves and between the CNT and other material surfaces play crucial roles in the functioning and performance of CNT-based material systems and devices. Therefore, characterization of the interfacial interaction in CNT-based systems is a critical step to understand the nanoscale interface and tune the system and device design and manufacturing for optimal functioning and performance. In this part of dissertation, a combination of both mechanical and theoretical methods was employed to study the adhesion interactions in CNT-based systems. Part II: Both CNTs and boron nitride nanotubes (BNNTs) possess superb mechanical properties and are promising for a great many applications. They can be used in similar applications, such as reinforcing fibers in polymer composites based on their similar mechanical and thermal properties. CNTs are promising for electronics and sensors while BNNTs can be used as electrical insulators due to the tremendous differences of the electrical property. Furthermore, BNNTs can survive in high temperature and hazardous environments because of their resistant to oxidation and harsh chemicals. In order to optimize their applications, their mechanical properties should be fully understood. In this part of the dissertation research, first, the radial elasticity of single-walled CNTs and BNNTs was investigated by means of atomic force microscopy (AFM); secondly, the engineering radial deformations in single walled CNTs and BNNTs covered by monolayer grapheme

Nanoparticle Addition to Enhance the Mechanical Response of Magnesium Alloys Including Nanoscale Deformation Mechanisms

NASA Astrophysics Data System (ADS)

Paramsothy, Muralidharan; Gupta, Manoj

In this study, various magnesium alloy nanocomposites derived from AZ (Aluminium-Zinc) or ZK (Zinc-Zirconium) series matrices and containing Al2O3, Si3N4, TiC or carbon nanotube (CNT) nanoparticle reinforcement (representative oxide, nitride, carbide or carbon nanoparticle reinforcement, respectively) were fabricated using solidification processing followed by hot extrusion. The main aim here was to simultaneously enhance tensile strength and ductility of each alloy using nanoparticles. The magnesium-oxygen strong affinity and magnesium-carbon weak affinity (comparison of extremes in affinity) are both well known in the context of magnesium composite processing. However, an approach to possibly quantify this affinity in magnesium nanocomposite processing is not clear. In this study accordingly, Nanoscale Electro Negative Interface Density or NENID quantifies the nanoparticle-alloy matrix interfacial area per unit volume in the magnesium alloy nanocomposite taking into consideration the electronegativity of the nanoparticle reinforcement. The beneficial (as well as comparative) effect of the nanoparticles on each alloy is discussed in this article. Regarding the mechanical performance of the nanocomposites, it is important to understand the experimentally observed nanoparticle-matrix interactions during plastic deformation (nanoscale deformation mechanisms). Little is known in this area based on direct observations for metal matrix nanocomposites. Here, relevant multiple nanoscale phenomena includes the emanation of high strain zones (HSZs) from nanoparticle surfaces.

Investigation of graphene-based nanoscale radiation sensitive materials

NASA Astrophysics Data System (ADS)

Robinson, Joshua A.; Wetherington, Maxwell; Hughes, Zachary; LaBella, Michael, III; Bresnehan, Michael

2012-06-01

Current state-of-the-art nanotechnology offers multiple benefits for radiation sensing applications. These include the ability to incorporate nano-sized radiation indicators into widely used materials such as paint, corrosion-resistant coatings, and ceramics to create nano-composite materials that can be widely used in everyday life. Additionally, nanotechnology may lead to the development of ultra-low power, flexible detection systems that can be embedded in clothing or other systems. Graphene, a single layer of graphite, exhibits exceptional electronic and structural properties, and is being investigated for high-frequency devices and sensors. Previous work indicates that graphene-oxide (GO) - a derivative of graphene - exhibits luminescent properties that can be tailored based on chemistry; however, exploration of graphene-oxide's ability to provide a sufficient change in luminescent properties when exposed to gamma or neutron radiation has not been carried out. We investigate the mechanisms of radiation-induced chemical modifications and radiation damage induced shifts in luminescence in graphene-oxide materials to provide a fundamental foundation for further development of radiation sensitive detection architectures. Additionally, we investigate the integration of hexagonal boron nitride (hBN) with graphene-based devices to evaluate radiation induced conductivity in nanoscale devices. Importantly, we demonstrate the sensitivity of graphene transport properties to the presence of alpha particles, and discuss the successful integration of hBN with large area graphene electrodes as a means to provide the foundation for large-area nanoscale radiation sensors.

Design of cemented tungsten carbide and boride-containing shields for a fusion power plant

NASA Astrophysics Data System (ADS)

Windsor, C. G.; Marshall, J. M.; Morgan, J. G.; Fair, J.; Smith, G. D. W.; Rajczyk-Wryk, A.; Tarragó, J. M.

2018-07-01

Results are reported on cemented tungsten carbide (cWC) and boride-containing composite materials for the task of shielding the centre column of a superconducting tokamak power plant. The shield is based on five concentric annular shells consisting of cWC and water layers of which the innermost cWC shield can be replaced with boride composites. Sample materials have been fabricated changing the parameters of porosity P, binder alloy fraction f binder and boron weight fraction f boron. For the fabricated materials, and other hypothetical samples with chosen parameters, Monte Carlo studies are made of: (i) the power deposition into the superconducting core, (ii) the fast neutron and gamma fluxes and (iii) the attenuation coefficients through the shield for the deposited power and neutron and gamma fluxes. It is shown that conventional Co-based cWC binder alloy can be replaced with a Fe–Cr alloy (92 wt.% Fe, 8 wt.% Cr), which has lower activation than cobalt with minor changes in shield performance. Boride-based composite materials have been prepared and shown to give a significant reduction in power deposition and flux, when placed close to the superconducting core. A typical shield of cemented tungsten carbide with 10 wt.% of Fe–8Cr binder and 0.1% porosity has a power reduction half-length of 0.06 m. It is shown that the power deposition increases by 4.3% for every 1% additional porosity, and 1.7% for every 1 wt.% additional binder. Power deposition decreased by 26% for an initial 1 wt.% boron addition, but further increases in f boron showed only a marginal decrease. The dependences of power deposited in the core, the maximum neutron and gamma fluxes on the core surface, and the half attenuation distances through the shield have been fitted to within a fractional percentage error by analytic functions of the porosity, metallic binder alloy and boron weight fractions.

Investigation of diffusional interaction between P91 grade ferritic steel and Fe-15 wt.%B alloy and study of kinetics of boride formation at high temperature

NASA Astrophysics Data System (ADS)

Rai, Arun Kumar; Vijayashanthi, N.; Tripathy, H.; Hajra, R. N.; Raju, S.; Murugesan, S.; Saroja, S.

2017-11-01

In the present study, the feasibility of employing the indigenously developed ferroboron alloy (Fe-15 wt.%B) as an alternate neutron shield material in combination with 9Cr-based ferritic steel (P91) clad in future Indian fast breeder reactors (FBR), has been investigated from a metallurgical perspective. Towards this goal, a series of diffusion couple experiments have been conducted at three different temperatures namely, 600, 700 and 800 °C for time durations up to 5000 h. The thickness of interaction layer has been monitored using standard metallographic procedures. The experiments revealed that ferroboron/P91 combination exhibited a tendency to form complex intermetallic borides at the interface. The structural and microstructural characterization of the interface confirmed that the reaction layer consists predominantly of borides of Fe and Cr of type FeB, Fe2B, (Fe,Cr)2B and (Fe,Cr)B. The measured variation of interaction layer thickness as a function of time and temperature have been modelled in terms of diffusion mediated interaction. The growth kinetics of borided layer has followed the parabolic law at each temperature, and the apparent activation energy for boride layer formation is found to be of the order of 115 kJ mol-1. This indicates that the kinetics of boriding could be governed by diffusion of B into the P91 matrix. Based on the findings of present study, an extrapolative estimate of the clad attack thickness at 550 °C for 60 years of operating time has been made and it turns out to be 210 ± 15 μm, which is less than the clad thickness of FBR shielding subassembly (4 mm) [1]. Thus, this study confirms that at testing temperatures from 550 to 600 °C, the ferroboron/P91 steel combination can be safely employed for shielding subassembly applications in fast reactors.

Electronic Structure Properties and a Bonding Model of Thermoelectric Half-Heusler and Boride Phases

NASA Astrophysics Data System (ADS)

Simonson, Jack William

Half-Heusler alloys MNiSn and MCoSb (M = Ti, Zr, Hf) and layered boride intermetallics with structure types YCrB4 and Er 3CrB7 were designed, synthesized, and characterized. The thermoelectric properties of these two classes of alloys were measured from room temperature to 1100 K with the intent of indirectly studying their electronic structure properties and gauging not only their suitability but that of related alloys for high temperature thermoelectric power generation. In the case of the half-Heusler alloys, transition metals were substituted to both the M and Ni/Co sites to study the resultant modifications of the d-orbital-rich portion of the electronic structure near the Fermi energy. This modification and subsequent pinning of the Fermi energy within the gap is discussed herein in terms of first principles electronic structure calculations from the literature. In the half-Heusler alloys, it was found that substitution of transition metals invariably led to a decrease in the thermopower, while the resistivity typically maintained its semiconducting trend. On the other hand, Sn doping in MCoSb type alloys -- a dopant that has been known for some time to be efficient -- was shown to result in high ZT at temperatures in excess of 1000 K. Moreover, the band gaps of the transition metal-doped alloys measured in this work offer insight into the discrepancy between the predicted and measured band gaps in the undoped parent compositions. In the case of the layered boride alloys, on the other hand, few electronic calculations have been published, thus prompting the generalization of a well-known electron counting rule -- which is typically used to study molecular organometallics, boranes, and metallocenes -- to predict the trends in the densities of states of crystalline solids that possess the requisite deltahedral bonding geometry. In accordance with these generalized electronic counting rules, alloys of the form RMB4 (R = Y, Gd, Ho; M = Cr, Mo, W) were measured to

The elevated temperature mechanical properties of silicon nitride/boron nitride fibrous monoliths

NASA Astrophysics Data System (ADS)

Trice, Rodney Wayne

A unique, all-ceramic material capable of non-brittle fracture via crack deflection has been characterized from 25sp°C through 1400sp°C. This material, called fibrous monoliths (FMs), was comprised of unidirectionally aligned 250 mum diameter cells of silicon nitride surrounded by 10 mum thick cell boundaries of boron nitride. Six weight percent yttria and two weight percent alumina were added to the silicon nitride to aid in densification. TEM experiments revealed that the sintering aids used to densify the silicon nitride cells were migrating into the boron nitride cell boundary during hot-pressing and that a fine network of micro-cracks existed between basal planes of boron nitride. Elevated temperature four point bending tests were performed on fibrous monolith ceramics from room temperature through 1400sp°C. Peak strengths of FMs averaged 510 MPa for specimens tested at room temperature through 176 MPa at 1400sp°C. Work of fractures ranged from 7300 J/msp2 to 3200 J/msp2 under the same temperature conditions. The interfacial fracture energy of boron nitride, GammasbBN, as a function of temperature has been determined using the Charalambides method. The fracture energy of boron nitride is approximately 40 J/msp2 and remained constant from 25sp°C through 950sp°C. A sharp increase in GammasbBN, to about 60 J/msp2, was observed at 1000sp°C-1050sp°C. This increase in GammasbBN was attributed to interactions of the crack tip with the cell boundary glassy phase. Subsequent measurements at 1075sp°C indicated a marked decrease in GammasbBN to near 40 J/msp2 before plateauing at 17-20 J/msp2 in the 1200sp°C-1300sp°C regime. The Mode I fracture toughness of silicon nitride was also determined using the single edge precracked beam method as a function of temperature. The He and Hutchinson model relating crack deflection at an interface to the Dundurs' parameter was applied to the current data set using the temperature dependent fracture energies of the boron

Co-current Doping Effect of Nanoscale Carbon and Aluminum Nitride on Critical Current Density and Flux Pinning Properties of Bulk MgB2 Superconductors

NASA Astrophysics Data System (ADS)

Tripathi, D.; Dey, T. K.

2018-05-01

The effect of nanoscale aluminum nitride (n-AlN) and carbon (n-C) co-doping on superconducting properties of polycrystalline bulk MgB2 superconductor has been investigated. Polycrystalline pellets of MgB2, MgB2 + 0.5 wt% AlN (nano), MgB_{1.99}C_{0.01} and MgB_{1.99}C_{0.01} + 0.5 wt% AlN (nano) have been synthesized by a solid reaction process under inert atmosphere. The transition temperature (TC) estimated from resistivity measurement indicates only a small decrease for C (nano) and co-doped MgB2 samples. The magnetic field response of investigated samples has been measured at 4, 10, and 20 K in the field range ± 6 T. MgB2 pellets co-doped with 0.5 wt% n-AlN and 1 wt% n-C display appreciable enhancement in critical current density (J_C) of MgB2 in both low (≥ 3 times), as well as, high-field region (≥ 15 times). J_C versus H behavior of both pristine and doped MgB2 pellets is well explained in the light of the collective pinning model. Further, the normalized pinning force density f_p(= F_p/F_{pmax}) displays a fair correspondence with the scaling procedure proposed by Eisterer et al. Moreover, the scaled data of the pinning force density (i.e., f_p{-}h data) of the investigated pellets at different temperature are well interpreted by a modified Dew-Hughes expression reported by Sandu and Chee.

Ion-beam nitriding of steels

NASA Technical Reports Server (NTRS)

Salik, J.

1984-01-01

The application of the ion beam technique to the nitriding of steels is described. It is indicated that the technique can be successfully applied to nitriding. Some of the structural changes obtained by this technique are similar to those obtained by ion nitriding. The main difference is the absence of the iron nitride diffraction lines. It is found that the dependence of the resultant microhardness on beam voltage for super nitralloy is different from that of 304 stainless steel.

Effect of Heat Treatment on Borides Precipitation and Mechanical Properties of CoCrFeNiAl1.8Cu0.7B0.3Si0.1 High-Entropy Alloy Prepared by Arc-Melting and Laser-Cladding

NASA Astrophysics Data System (ADS)

Zhang, H.; Tang, H.; He, Y. Z.; Zhang, J. L.; Li, W. H.; Guo, S.

2017-11-01

Effects of heat treatment on borides precipitation and mechanical properties of arc-melted and laser-cladded CoCrNiFeAl1.8Cu0.7B0.3Si0.1 high-entropy alloys were comparatively studied. The arc-melted alloy contains lots of long strip borides distributed in the body-centered cubic phase, with a hardness about 643 HV0.5. Laser-cladding can effectively inhibit the boride precipitation and the laser-cladded alloy is mainly composed of a simple bcc solid solution, with a high hardness about 769 HV0.5, indicating the strengthening effect by interstitial boron atoms is greater than the strengthening by borides precipitation. Heat treatments between 800°C and 1200°C can simultaneously improve the hardness and fracture toughness of arc-melted alloys, owing to the boride spheroidization, dissolution, re-precipitation, and hence the increased boron solubility and nano-precipitation in the bcc solid solution. By contrast, the hardness of laser-cladded alloys reduce after heat treatments in the same temperature range, due to the decreased boron solubility in the matrix.

Gallium nitride optoelectronic devices

NASA Technical Reports Server (NTRS)

Chu, T. L.; Chu, S. S.

1972-01-01

The growth of bulk gallium nitride crystals was achieved by the ammonolysis of gallium monochloride. Gallium nitride single crystals up to 2.5 x 0.5 cm in size were produced. The crystals are suitable as substrates for the epitaxial growth of gallium nitride. The epitaxial growth of gallium nitride on sapphire substrates with main faces of (0001) and (1T02) orientations was achieved by the ammonolysis of gallium monochloride in a gas flow system. The grown layers had electron concentrations in the range of 1 to 3 x 10 to the 19th power/cu cm and Hall mobilities in the range of 50 to 100 sq cm/v/sec at room temperature.

Thermal properties of zirconium diboride -- transition metal boride solid solutions

NASA Astrophysics Data System (ADS)

McClane, Devon Lee

This research focuses on the thermal properties of zirconium diboride (ZrB2) based ceramics. The overall goal was to improve the understanding of how different transition metal (TM) additives influence thermal transport in ZrB2. To achieve this, ZrB2 with 0.5 wt% carbon, and 3 mol% of individual transition metal borides, was densified by hot-press sintering. The transition metals that were investigated were: Y, Ti, Hf, V, Nb, Ta, Cr, Mo, W, and Re. The room temperature thermal diffusivities of the compositions ranged from 0.331 cm2/s for nominally pure ZrB2 to 0.105 cm2/s for (Zr,Cr)B2 and converged around 0.155cm2/s at higher temperatures for all compositions. Thermal conductivities were calculated from the diffusivities, using temperature-dependent values for density and heat capacity. The electron contribution to thermal conductivity was calculated from measured electrical resistivity according to the Wiedemann-Franz law. The phonon contribution to thermal conductivity was calculated by subtracting the electron contribution from the total thermal conductivity. Rietveld refinement of x-ray diffraction data was used to determine the lattice parameters of the compositions. The decrease in thermal conductivity for individual additives correlated directly to the metallic radius of the additive. Additional strain appeared to exist for additives when the stable TM boride for that metal had different crystal symmetries than ZrB2. This research provided insight into how additives and impurities affect thermal transport in ZrB2. The research potentially offers a basis for future modeling of thermal conductivity in ultra-high temperature ceramics based on the correlation between metallic radius and the decrease in thermal conductivity.

Boron Nitride Nanoribbons from Exfoliation of Boron Nitride Nanotubes

NASA Technical Reports Server (NTRS)

Hung, Ching-Cheh; Hurst, Janet; Santiago, Diana

2017-01-01

Two types of boron nitride nanotubes (BNNTs) were exfoliated into boron nitride nanoribbons (BNNR), which were identified using transmission electron microscopy: (1) commercial BNNTs with thin tube walls and small diameters. Tube unzipping was indicated by a large decrease of the sample's surface area and volume for pores less than 2 nm in diameter. (2) BNNTs with large diameters and thick walls synthesized at NASA Glenn Research Center. Here, tube unraveling was indicated by a large increase in external surface area and pore volume. For both, the exfoliation process was similar to the previous reported method to exfoliate commercial hexagonal boron nitride (hBN): Mixtures of BNNT, FeCl3, and NaF (or KF) were sequentially treated in 250 to 350 C nitrogen for intercalation, 500 to 750 C air for exfoliation, and finally HCl for purification. Property changes of the nanosized boron nitride throughout this process were also similar to the previously observed changes of commercial hBN during the exfoliation process: Both crystal structure (x-ray diffraction data) and chemical properties (Fourier-transform infrared spectroscopy data) of the original reactant changed after intercalation and exfoliation, but most (not all) of these changes revert back to those of the reactant once the final, purified products are obtained.

Plasma-assisted interface engineering of boron nitride nanostructure films.

PubMed

Pakdel, Amir; Bando, Yoshio; Golberg, Dmitri

2014-10-28

Today many aspects of science and technology are progressing into the nanoscale realm where surfaces and interfaces are intrinsically important in determining properties and performances of materials and devices. One familiar phenomenon in which interfacial interactions play a major role is the wetting of solids. In this work we use a facile one-step plasma method to control the wettability of boron nitride (BN) nanostructure films via covalent chemical functionalization, while their surface morphology remains intact. By tailoring the concentration of grafted hydroxyl groups, superhydrophilic, hydrophilic, and hydrophobic patterns are created on the initially superhydrophobic BN nanosheet and nanotube films. Moreover, by introducing a gradient of the functional groups, directional liquid spreading toward increasing [OH] content is achieved on the films. The resulting insights are meant to illustrate great potentials of this method to tailor wettability of ceramic films, control liquid flow patterns for engineering applications such as microfluidics and biosensing, and improve the interfacial contact and adhesion in nanocomposite materials.

Method to synthesize bulk iron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Monson, Todd; Lavernia, Enrique J.; Zheng, Baolong

Bulk iron nitride can be synthesized from iron nitride powder by spark plasma sintering. The iron nitride can be spark plasma sintered at a temperature of less than 600°C. and a pressure of less than 600 MPa, with 400 MPa or less most often being sufficient. High pressure SPS can consolidate dense iron nitrides at a lower temperature to avoid decomposition. The higher pressure and lower temperature of spark discharge sintering avoids decomposition and limits grain growth, enabling enhanced magnetic properties. The method can further comprise synthesis of nanocrystalline iron nitride powders using two-step reactive milling prior to high-pressure sparkmore » discharge sintering.« less

Surface modification of 17-4PH stainless steel by DC plasma nitriding and titanium nitride film duplex treatment

NASA Astrophysics Data System (ADS)

Qi, F.; Leng, Y. X.; Huang, N.; Bai, B.; Zhang, P. Ch.

2007-04-01

17-4PH stainless steel was modified by direct current (DC) plasma nitriding and titanium nitride film duplex treatment in this study. The microstructure, wear resistance and corrosion resistance were characterized by X-ray diffraction (XRD), pin-on-disk tribological test and polarization experiment. The results revealed that the DC plasma nitriding pretreatment was in favor of improving properties of titanium nitride film. The corrosion resistance and wear resistance of duplex treatment specimen was more superior to that of only coated titanium nitride film.

Ultracapacitor current collector

DOEpatents

Jerabek, Elihu Calfin; Mikkor, Mati

2001-10-16

An ultracapacitor having two solid, nonporous current collectors, two porous electrodes separating the collectors, a porous separator between the electrodes and an electrolyte occupying the pores in the electrodes and separator. At least one of the current collectors comprises a conductive metal substrate coated with a metal nitride, carbide or boride coating.

Process research into metallic pipe wear of hot chamber die casting machines and methods ofincreasing wear resistance

NASA Astrophysics Data System (ADS)

Mukhametzyanova, G. F.; Kolesnikov, MS; Mukhametzyanov, I. R.; Astatshenko, V. I.

2017-09-01

The kinetics and reasons for metallic pipe wear of hot chamberzinc alloy die casting machines are established.Increasing metallic pipe wear components wear resistance is being achieved by means of die steelДИ - 22 with electroslag remelting modification and electron-beamremelting modification and after the processes of nitriding and boriding besides.

Boron nitride composites

DOEpatents

Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

2016-02-16

According to one embodiment, a composite product includes hexagonal boron nitride (hBN), and a plurality of cubic boron nitride (cBN) particles, wherein the plurality of cBN particles are dispersed in a matrix of the hBN. According to another embodiment, a composite product includes a plurality of cBN particles, and one or more borate-containing binders.

High temperature solar energy absorbing surfaces

DOEpatents

Schreyer, J.M.; Schmitt, C.R.; Abbatiello, L.A.

A solar collector having an improved coating is provided. The coating is a plasma-sprayed coating comprising a material having a melting point above 500/sup 0/C at which it is stable and selected from the group of boron carbide, boron nitride, metals and metal oxides, nitrides, carbides, borides, and silicates. The coatings preferably have a porosity of about 15 to 25% and a thickness of less than 200 micrometers. The coatings can be provided by plasma-spraying particles having a mean diameter of about 10 to 200 micrometers.

Method of manufacture of atomically thin boron nitride

DOEpatents

Zettl, Alexander K

2013-08-06

The present invention provides a method of fabricating at least one single layer hexagonal boron nitride (h-BN). In an exemplary embodiment, the method includes (1) suspending at least one multilayer boron nitride across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure. The present invention also provides a method of fabricating single layer hexagonal boron nitride. In an exemplary embodiment, the method includes (1) providing multilayer boron nitride suspended across a gap of a support structure and (2) performing a reactive ion etch upon the multilayer boron nitride to produce the single layer hexagonal boron nitride suspended across the gap of the support structure.

Thermal conversion of an iron nitride-silicon nitride precursor into a ferromagnetic nanocomposite

NASA Astrophysics Data System (ADS)

Maya, L.; Thompson, J. R.; Song, K. J.; Warmack, R. J.

1998-01-01

Iron nitride films, FeN, in a pure form and in the form of a nanocomposite in silicon nitride were prepared by reactive sputtering using iron or iron disilicide, respectively, as targets in a nitrogen plasma. Iron nitride decomposes into the elements by heating in vacuum to 800 °C. Intermediate phases such as Fe2N or Fe4N form at lower temperatures. The nanocomposites contain the iron phases as particles with an average size of ˜5 nm dispersed in the amorphous silicon nitride matrix. The magnetic properties of the nanocomposites were established. The precursor FeN-Si3N4 film is paramagnetic, while the Fe-Si3N4, obtained by heating in vacuum, is ferromagnetic and shows typical superparamagnetic behavior. These films are of interest as recording media with superior chemical and mechanical stability and may be encoded by localized heating.

Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates

DTIC Science & Technology

2013-02-01

Nord, J.; Albe, K.; Erhart, P.; Nordlund, K. Modelling of Compound Semiconductors: Analytical Bond-order Potential for Gallium , Nitrogen and Gallium ...Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates by Iskander G. Batyrev, Chi-Chin Wu...Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates Iskander G. Batyrev and N. Scott Weingarten Weapons and

Hard carbon nitride and method for preparing same

DOEpatents

Haller, Eugene E.; Cohen, Marvin L.; Hansen, William L.

1992-01-01

Novel crystalline .alpha. (silicon nitride-like)-carbon nitride and .beta. (silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate.

Infiltration processing of boron carbide-, boron-, and boride-reactive metal cermets

DOEpatents

Halverson, Danny C.; Landingham, Richard L.

1988-01-01

A chemical pretreatment method is used to produce boron carbide-, boron-, and boride-reactive metal composites by an infiltration process. The boron carbide or other starting constituents, in powder form, are immersed in various alcohols, or other chemical agents, to change the surface chemistry of the starting constituents. The chemically treated starting constituents are consolidated into a porous ceramic precursor which is then infiltrated by molten aluminum or other metal by heating to wetting conditions. Chemical treatment of the starting constituents allows infiltration to full density. The infiltrated precursor is further heat treated to produce a tailorable microstructure. The process at low cost produces composites with improved characteristics, including increased toughness, strength.

Hard carbon nitride and method for preparing same

DOEpatents

Haller, E.E.; Cohen, M.L.; Hansen, W.L.

1992-05-05

Novel crystalline [alpha](silicon nitride-like)-carbon nitride and [beta](silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate. 1 figure.

P-type gallium nitride

DOEpatents

Rubin, M.; Newman, N.; Fu, T.; Ross, J.; Chan, J.

1997-08-12

Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5{times}10{sup 11} /cm{sup 3} and hole mobilities of about 500 cm{sup 2} /V-sec, measured at 250 K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al. 9 figs.

P-type gallium nitride

DOEpatents

Rubin, Michael; Newman, Nathan; Fu, Tracy; Ross, Jennifer; Chan, James

1997-01-01

Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

Experimental observation of boron nitride chains.

PubMed

Cretu, Ovidiu; Komsa, Hannu-Pekka; Lehtinen, Ossi; Algara-Siller, Gerardo; Kaiser, Ute; Suenaga, Kazu; Krasheninnikov, Arkady V

2014-12-23

We report the formation and characterization of boron nitride atomic chains. The chains were made from hexagonal boron nitride sheets using the electron beam inside a transmission electron microscope. We find that the stability and lifetime of the chains are significantly improved when they are supported by another boron nitride layer. With the help of first-principles calculations, we prove the heteroatomic structure of the chains and determine their mechanical and electronic properties. Our study completes the analogy between various boron nitride and carbon polymorphs, in accordance with earlier theoretical predictions.

Molecular Beam Epitaxial Growth of Iron Nitrides on Zinc-Blende Gallium Nitride(001)

NASA Astrophysics Data System (ADS)

Pak, Jeongihm; Lin, Wenzhi; Chinchore, Abhijit; Wang, Kangkang; Smith, Arthur R.

2008-03-01

Iron nitrides are attractive materials for their high magnetic moments, corrosion, and oxidation resistance. We present the successful epitaxial growth of iron nitride on zinc-blende gallium nitride (c-GaN) in order to develop a novel magnetic transition metal nitride/semiconductor system. First, GaN is grown on magnesium oxide (MgO) substrates having (001) orientation using rf N2-plasma molecular beam epitaxy. Then we grow FeN at substrate temperature of ˜ 210 ^oC up to a thickness of ˜ 10.5 nm. In-situ reflection high-energy electron diffraction (RHEED) is used to monitor the surface during growth. Initial results suggest that the epitaxial relationship is FeN[001] || GaN[001] and FeN[100] || GaN[100]. Work in progress is to investigate the surface using in-situ scanning tunneling microscopy (STM) to reveal the surface structure at atomic scale, as well as to explore more Fe-rich magnetic phases.

Vapor pressure and evaporation rate of certain heat-resistant compounds in a vacuum at high temperatures

NASA Technical Reports Server (NTRS)

Bolgar, A. S.; Verkhoglyadova, T. S.; Samsonov, G. V.

1985-01-01

The vapor pressure and evaporation rate of borides of titanium, zirconium, and chrome; and of strontium and carbides of titanium, zirconium, and chrome, molybdenum silicide; and nitrides of titanium, niobium, and tantalum in a vacuum were studied. It is concluded that all subject compounds evaporate by molecular structures except AlB sub 12' which dissociates, losing the aluminum.

Thermodynamic modelling of phase equilibrium in system Ti-B-Si-C, synthesis and phases composition of borides and carbides layers on titanic alloyVT-1 at electron beam treatment in vacuum

NASA Astrophysics Data System (ADS)

Smirnyagina, N. N.; Khaltanova, V. M.; Lapina, A. E.; Dasheev, D. E.

2017-01-01

Composite layers on the basis of carbides and borides the titan and silicon on titanic alloy VT-1 are generated at diffused saturation in vacuum. Formation in a composite of MAX phase Ti3SiC2 is shown. Thermodynamic research of phase equilibrium in systems Ti-Si-C and Ti-B-C in the conditions of high vacuum is executed. The thermodynamics, formation mechanisms of superfirm layers borides and carbides of the titan and silicon are investigated.

Kinetics of electrolysis current reversal boriding of tool steels in a boron-containing oxychloride melt based on CaCl2

NASA Astrophysics Data System (ADS)

Chernov, Ya. B.; Filatov, E. S.

2017-08-01

The kinetics of thermal diffusion boriding in a melt based on calcium chloride with a boron oxide additive is studied using reversed current. The main temperature, concentration, and current parameters of the process are determined. The phase composition of the coating is determined by a metallographic method.

Boron nitride housing cools transistors

NASA Technical Reports Server (NTRS)

1965-01-01

Boron nitride ceramic heat sink cools transistors in r-f transmitter and receiver circuits. Heat dissipated by the transistor is conducted by the boron nitride housing to the metal chassis on which it is mounted.

Silicon nitride/silicon carbide composite powders

DOEpatents

Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

1996-06-11

Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

Photodetectors using III-V nitrides

DOEpatents

Moustakas, Theodore D.; Misra, Mira

1997-01-01

A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

Tensile strength of aluminium nitride films

NASA Astrophysics Data System (ADS)

Zong, Deng Gang; Ong, Chung Wo; Aravind, Manju; Tsang, Mei Po; Loong Choy, Chung; Lu, Deren; Ma, Dejun

2004-11-01

Two-layered aluminium nitride (AlN)/silicon nitride microbridges were fabricated for microbridge tests to evaluate the elastic modulus, residual stress and tensile strength of the AlN films. The silicon nitride layer was added to increase the robustness of the structure. In a microbridge test, load was applied to the centre of a microbridge and was gradually increased by a nano-indenter equipped with a wedge tip until the sample was broken, while displacement was recorded coherently. Measurements were performed on single-layered silicon nitride microbridges and two-layered AlN/silicon nitride microbridges respectively. The data were fitted to a theory to derive the elastic modulus, residual stress and tensile strength of the silicon nitride films and AlN films. For the AlN films, the three parameters were determined to be 200, 0.06 and 0.3 GPa, respectively. The values of elastic modulus obtained were consistent with those measured by conventional nano-indentation method. The tensile strength value can be used as a reference to reflect the maximum tolerable tensile stress of AlN films when they are used in micro-electromechanical devices.

Pt-B System Revisited: Pt2B, a New Structure Type of Binary Borides. Ternary WAl12-Type Derivative Borides.

PubMed

Sologub, Oksana; Salamakha, Leonid; Rogl, Peter; Stöger, Berthold; Bauer, Ernst; Bernardi, Johannes; Giester, Gerald; Waas, Monika; Svagera, Robert

2015-11-16

On the basis of a detailed study applying X-ray single-crystal and powder diffraction, differential scanning calorimetry, and scanning electron microscopy analysis, it was possible to resolve existing uncertainties in the Pt-rich section (≥65 atom % Pt) of the binary Pt-B phase diagram above 600 °C. The formation of a unique structure has been observed for Pt2B [X-ray single-crystal data: space group C2/m, a = 1.62717(11) nm, b = 0.32788(2) nm, c = 0.44200(3) nm, β = 104.401(4)°, RF2 = 0.030]. Within the homogeneity range of "Pt3B", X-ray powder diffraction phase analysis prompted two structural modifications as a function of temperature. The crystal structure of "hT-Pt3B" complies with the hitherto reported structure of anti-MoS2 [space group P63/mmc, a = 0.279377(2) nm, c = 1.04895(1) nm, RF = 0.075, RI = 0.090]. The structure of the new "[Formula: see text]T-Pt3B" is still unknown. The formation of previously reported Pt∼4B has not been confirmed from binary samples. Exploration of the Pt-rich section of the Pt-Cu-B system at 600 °C revealed a new ternary compound, Pt12CuB6-y [X-ray single-crystal data: space group Im3̅, a = 0.75790(2) nm, y = 3, RF2 = 0.0129], which exhibits the filled WAl12-type structure accommodating boron in the interstitial trigonal-prismatic site 12e. The isotypic platinum-aluminum-boride was synthesized and studied. The solubility of copper in binary platinum borides has been found to attain ∼7 atom % Cu for Pt2B but to be insignificant for "[Formula: see text]T-Pt3B". The architecture of the new Pt2B structure combines puckered layers of boron-filled and empty [Pt6] octahedra (anti-CaCl2-type fragment) alternating along the x axis with a double layer of boron-semifilled [Pt6] trigonal prisms interbedded with a layer of empty tetrahedra and tetragonal pyramids (B-deficient α-T[Formula: see text]I fragment). Assuming boron vacancies ordering (space group R3), the Pt12CuB6-y structure exhibits serpentine-like columns of edge

Alloy Effects on the Gas Nitriding Process

NASA Astrophysics Data System (ADS)

Yang, M.; Sisson, R. D.

2014-12-01

Alloy elements, such as Al, Cr, V, and Mo, have been used to improve the nitriding performance of steels. In the present work, plain carbon steel AISI 1045 and alloy steel AISI 4140 were selected to compare the nitriding effects of the alloying elements in AISI 4140. Fundamental analysis is carried out by using the "Lehrer-like" diagrams (alloy specific Lehrer diagram and nitriding potential versus nitrogen concentration diagram) and the compound layer growth model to simulate the gas nitriding process. With this method, the fundamental understanding for the alloy effect based on the thermodynamics and kinetics becomes possible. This new method paves the way for the development of new alloy for nitriding.

Finishing Techniques for Silicon Nitride Bearings

DTIC Science & Technology

1976-03-01

finishing procedures. Rolling contact fatigue lives of silicon nitride with selected smoother finishes tested at 800 ksi Hertz stress were an order...grinding. Rolling contact fatigue lives of silicon nitride with selected smoother finishes tested at 800 ksi Hertz stress were an order of magnitude...lives of silicon nitride with selected smoother finishes tested at 800 ksi Hertz stress were an order of magnitude longer than those

Photodetectors using III-V nitrides

DOEpatents

Moustakas, T.D.; Misra, M.

1997-10-14

A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector. 24 figs.

Switchable friction enabled by nanoscale self-assembly on graphene

DOE PAGES

Gallagher, Patrick; Lee, Menyoung; Amet, Francois; ...

2016-02-23

Graphene monolayers are known to display domains of anisotropic friction with twofold symmetry and anisotropy exceeding 200%. This anisotropy has been thought to originate from periodic nanoscale ripples in the graphene sheet, which enhance puckering around a sliding asperity to a degree determined by the sliding direction. Here we demonstrate that these frictional domains derive not from structural features in the graphene but from self-assembly of environmental adsorbates into a highly regular superlattice of stripes with period 4–6 nm. The stripes and resulting frictional domains appear on monolayer and multilayer graphene on a variety of substrates, as well as onmore » exfoliated flakes of hexagonal boron nitride. We show that the stripe-superlattices can be reproducibly and reversibly manipulated with submicrometre precision using a scanning probe microscope, allowing us to create arbitrary arrangements of frictional domains within a single flake. In conclusion, our results suggest a revised understanding of the anisotropic friction observed on graphene and bulk graphite in terms of adsorbates.« less

Molten-Salt-Based Growth of Group III Nitrides

DOEpatents

Waldrip, Karen E.; Tsao, Jeffrey Y.; Kerley, Thomas M.

2008-10-14

A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The concentration of at least one of the nitride ion or Group III cation is determined by electrochemical generation of the ions.

Synthesis of reduced carbon nitride at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kharlamov, Alexey; Bondarenko, Marina, E-mail: mebondarenko@ukr.net; Kharlamova, Ganna

For the first time at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O reduced carbon nitride (or reduced multi-layer azagraphene) is obtained. It is differed from usually synthesized carbon nitride by a significantly large (on 0.09 nm) interplanar distance is. At the same time, the chemical bonds between atoms in a heteroatomic plane of reduced carbon nitride correspond to the bonds in a synthesized g-C{sub 3}N{sub 4}. The samples of water-soluble carbon nitride oxide were synthesized under the special reactionary conditions of a pyrolysis of melamine and urea. We believe that reduced carbon nitride consists ofmore » weakly connected carbon-nitrogen monosheets (azagraphene sheets) as well as reduced (from graphene oxide) graphene contains weakly connected graphene sheets. - Graphical abstract: XRD pattern and schematic atomic model of one layer of reduced carbon nitride, carbon nitride oxide and synthesized carbon nitride. For the first time at the reduction by hydroquinone of the water-soluble carbon nitride oxide (g-C{sub 3}N{sub 4})O is obtained the reduced carbon nitride (or reduced multi-layer azagraphene). Display Omitted - Highlights: • First the reduced carbon nitride (RCN) at the reduction of the carbon nitride oxide was obtained. • Water-soluble carbon nitride oxide was reduced by hydroquinone. • The chemical bonds in a heteroatomic plane of RCN correspond to the bonds in a synthesized g-C{sub 3}N{sub 4}. • Reduced carbon nitride consists of poorly connected heteroatomic azagraphene layers.« less

Boron Nitride Nanotubes

NASA Technical Reports Server (NTRS)

Jordan, Kevin (Inventor); Smith, Michael W. (Inventor); Park, Cheol (Inventor)

2012-01-01

Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

Boron nitride nanotubes

DOEpatents

Smith, Michael W [Newport News, VA; Jordan, Kevin [Newport News, VA; Park, Cheol [Yorktown, VA

2012-06-06

Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

Low temperature route to uranium nitride

DOEpatents

Burrell, Anthony K.; Sattelberger, Alfred P.; Yeamans, Charles; Hartmann, Thomas; Silva, G. W. Chinthaka; Cerefice, Gary; Czerwinski, Kenneth R.

2009-09-01

A method of preparing an actinide nitride fuel for nuclear reactors is provided. The method comprises the steps of a) providing at least one actinide oxide and optionally zirconium oxide; b) mixing the oxide with a source of hydrogen fluoride for a period of time and at a temperature sufficient to convert the oxide to a fluoride salt; c) heating the fluoride salt to remove water; d) heating the fluoride salt in a nitrogen atmosphere for a period of time and at a temperature sufficient to convert the fluorides to nitrides; and e) heating the nitrides under vacuum and/or inert atmosphere for a period of time sufficient to convert the nitrides to mononitrides.

Ultrafast structural dynamics of boron nitride nanotubes studied using transmitted electrons.

PubMed

Li, Zhongwen; Sun, Shuaishuai; Li, Zi-An; Zhang, Ming; Cao, Gaolong; Tian, Huanfang; Yang, Huaixin; Li, Jianqi

2017-09-14

We investigate the ultrafast structural dynamics of multi-walled boron nitride nanotubes (BNNTs) upon femtosecond optical excitation using ultrafast electron diffraction in a transmission electron microscope. Analysis of the time-resolved (100) and (002) diffraction profiles reveals highly anisotropic lattice dynamics of BNNTs, which can be attributed to the distinct nature of the chemical bonds in the tubular structure. Moreover, the changes in (002) diffraction positions and intensities suggest that the lattice response of BNNTs to the femtosecond laser excitation involves a fast and a slow lattice dynamic process. The fast process with a time constant of about 8 picoseconds can be understood to be a result of electron-phonon coupling, while the slow process with a time constant of about 100 to 300 picoseconds depending on pump laser fluence is tentatively associated with an Auger recombination effect. In addition, we discuss the power-law relationship of a three-photon absorption process in the BNNT nanoscale system.

The prospect of uranium nitride (UN) and mixed nitride fuel (UN-PuN) for pressurized water reactor

NASA Astrophysics Data System (ADS)

Syarifah, Ratna Dewi; Suud, Zaki

2015-09-01

Design study of small Pressurized Water Reactors (PWRs) core loaded with uranium nitride fuel (UN) and mixed nitride fuel (UN-PuN), Pa-231 as burnable poison, and Americium has been performed. Pa-231 known as actinide material, have large capture cross section and can be converted into fissile material that can be utilized to reduce excess reactivity. Americium is one of minor actinides with long half life. The objective of adding americium is to decrease nuclear spent fuel in the world. The neutronic analysis results show that mixed nitride fuel have k-inf greater than uranium nitride fuel. It is caused by the addition of Pu-239 in mixed nitride fuel. In fuel fraction analysis, for uranium nitride fuel, the optimum volume fractions are 45% fuel fraction, 10% cladding and 45% moderator. In case of UN-PuN fuel, the optimum volume fractions are 30% fuel fraction, 10% cladding and 60% coolant/ moderator. The addition of Pa-231 as burnable poison for UN fuel, enrichment U-235 5%, with Pa-231 1.6% has k-inf more than one and excess reactivity of 14.45%. And for mixed nitride fuel, the lowest value of reactivity swing is when enrichment (U-235+Pu) 8% with Pa-231 0.4%, the excess reactivity value 13,76%. The fuel pin analyze for the addition of Americium, the excess reactivity value is lower than before, because Americium absorb the neutron. For UN fuel, enrichment U-235 8%, Pa-231 1.6% and Am 0.5%, the excess reactivity is 4.86%. And for mixed nitride fuel, when enrichment (U-235+Pu) 13%, Pa-231 0.4% and Am 0.1%, the excess reactivity is 11.94%. For core configuration, it is better to use heterogeneous than homogeneous core configuration, because the radial power distribution is better.

Structural, electronic and thermal properties of super hard ternary boride, WAlB

NASA Astrophysics Data System (ADS)

Rajpoot, Priyanka; Rastogi, Anugya; Verma, U. P.

2018-04-01

A first principle study of the structural, electronic and thermal properties of Tungsten Aluminum Boride (WAlB) using full-potential linearized augmented plane wave (FP-LAPW) in the frame work of density function theory (DFT) have been calculated. The calculated equilibrium structural parameters are in excellent agreement with available experimental results. The calculated electronic band structure reveals that WAlB is metallic in nature. The quasi-harmonic Debye model is applied to study of the temperature and pressure effect on volume, Debye temperature, thermal expansion coefficient and specific heat at constant volume and constant pressure. To the best of our knowledge theoretical investigation of these properties of WAlB is reported for the first time.

Cubic nitride templates

DOEpatents

Burrell, Anthony K; McCleskey, Thomas Mark; Jia, Quanxi; Mueller, Alexander H; Luo, Hongmei

2013-04-30

A polymer-assisted deposition process for deposition of epitaxial cubic metal nitride films and the like is presented. The process includes solutions of one or more metal precursor and soluble polymers having binding properties for the one or more metal precursor. After a coating operation, the resultant coating is heated at high temperatures under a suitable atmosphere to yield metal nitride films and the like. Such films can be used as templates for the development of high quality cubic GaN based electronic devices.

A Simple Kinetic Model for the Growth of Fe2B Layers on AISI 1026 Steel During the Powder-pack Boriding

NASA Astrophysics Data System (ADS)

Flores-Rentería, M. A.; Ortiz-Domínguez, M.; Keddam, M.; Damián-Mejía, O.; Elias-Espinosa, M.; Flores-González, M. A.; Medina-Moreno, S. A.; Cruz-Avilés, A.; Villanueva-Ibañez, M.

2015-02-01

This work focused on the determination of boron diffusion coefficient through the Fe2B layers on AISI 1026 steel using a mathematical model. The suggested model solves the mass balance equation at the (Fe2B/substrate) interface. This thermochemical treatment was carried out in the temperature range of 1123-1273 K for a treatment time ranging from 2 to 8 h. The generated boride layers were characterized by different experimental techniques such as light optical microscopy, scanning electron microscopy, XRD analysis and the Daimler-Benz Rockwell-C indentation technique. As a result, the boron activation energy for AISI 1026 steel was estimated as 178.4 kJ/mol. Furthermore, this kinetic model was validated by comparing the experimental Fe2B layer thickness with the predicted one at a temperature of 1253 K for 5 h of treatment. A contour diagram relating the layer thickness to the boriding parameters was proposed to be used in practical applications.

PREFACE: The 16th International Symposium on Boron, Borides and Related Materials (ISBB 2008)

NASA Astrophysics Data System (ADS)

Tanaka, Takaho

2009-07-01

This volume of Journal of Physics: Conference Series contains invited and contributed peer-reviewed papers that were presented at the 16th International Symposium on Boron, Borides and Related Materials (ISBB 2008), which was held on 7-12 September 2008, at Kunibiki Messe, Matsue, Japan. This triennial symposium has a half-century long history starting from the 1st meeting in 1959 at Asbury Park, New Jersey. We were very pleased to organize ISBB 2008, which gathered chemists, physicists, materials scientists as well as diamond and high-pressure researchers. This meeting had a strong background in the boron-related Japanese research history, which includes the discovery of superconductivity in MgB2 and development of Nd-Fe-B hard magnets and of YB66 soft X-ray monochromator. The scope of ISBB 2008 spans both basic and applied interdisciplinary research that is centered on boron, borides and related materials, and the collection of articles defines the state of the art in research on these materials. The topics are centered on: 1. Preparation of new materials (single crystals, thin films, nanostructures, ceramics, etc) under normal or extreme conditions. 2. Crystal structure and chemical bonding (new crystal structures, nonstoichiometry, defects, clusters, quantum-chemical calculations). 3. Physical and chemical properties (band structure, phonon spectra, superconductivity; optical, electrical, magnetic, emissive, mechanical properties; phase diagrams, thermodynamics, catalytic activity, etc) in a wide range of temperatures and pressures. 4. Applications and prospects (thermoelectric converters, composites, ceramics, coatings, etc) There were a few discoveries of new materials, such as nanomaterials, and developments in applications. Many contributions were related to 4f heavy Fermion systems of rare-earth borides. Exotic mechanisms of magnetism and Kondo effects have been discussed, which may indicate another direction of development of boride. Two special sessions

Blueish green photoluminescence from nitrided GaAs(100) surfaces

NASA Astrophysics Data System (ADS)

Shimaoka, Goro; Udagawa, Takashi

1999-04-01

Optical and structural studies were made on the Si-doped (100)GaAs surfaces nitrided at a temperature between 650° and 750°C for 15 min in the flowing NH 3 gas. The wavelength of photoluminescence (PL) spectra were observed to be shortened from 820 nm of the GaAs nitrided at 650°C with increasing nitridation temperature. Blueish green PL with wavelengths of approx. 490 nm and 470 nm were emitted from the nitrided surfaces at 700° and 750°C, respectively. Results of AES and SIMS indicated that the surfaces are nitrided as GaAs 1- xN x, (0< x≤1) alloy layer, and the nitrided region also tended to increase as the temperature raised. High-resolution transmission electron microscopic (HRTEM), transmission electron diffraction (TED) and energy dispersive X-ray (EDX) results showed that films peeled off from the nitrided surfaces consisted mainly of hexagonal, wurtzite-type gallium nitride (GaN) with stacking faults and microtwins.

Process for making transition metal nitride whiskers

DOEpatents

Bamberger, Carlos E.

1989-01-01

A process for making metal nitrides, particularly titanium nitride whiskers, using a cyanide salt as a reducing agent for a metal compound in the presence of an alkali metal oxide. Sodium cyanide, various titanates and titanium oxide mixed with sodium oxide react to provide titanium nitride whiskers that can be used as reinforcement to ceramic composites.

Precipitation Modeling in Nitriding in Fe-M Binary System

NASA Astrophysics Data System (ADS)

Tomio, Yusaku; Miyamoto, Goro; Furuhara, Tadashi

2016-10-01

Precipitation of fine alloy nitrides near the specimen surface results in significant surface hardening in nitriding of alloyed steels. In this study, a simulation model of alloy nitride precipitation during nitriding is developed for Fe-M binary system based upon the Kampmann-Wagner numerical model in order to predict variations in the distribution of precipitates with depth. The model can predict the number density, average radius, and volume fraction of alloy nitrides as a function of depth from the surface and nitriding time. By a comparison with the experimental observation in a nitrided Fe-Cr alloy, it was found that the model can predict successfully the observed particle distribution from the surface into depth when appropriate solubility of CrN, interfacial energy between CrN and α, and nitrogen flux at the surface are selected.

Low pressure growth of cubic boron nitride films

NASA Technical Reports Server (NTRS)

Ong, Tiong P. (Inventor); Shing, Yuh-Han (Inventor)

1997-01-01

A method for forming thin films of cubic boron nitride on substrates at low pressures and temperatures. A substrate is first coated with polycrystalline diamond to provide a uniform surface upon which cubic boron nitride can be deposited by chemical vapor deposition. The cubic boron nitride film is useful as a substitute for diamond coatings for a variety of applications in which diamond is not suitable. any tetragonal or hexagonal boron nitride. The cubic boron nitride produced in accordance with the preceding example is particularly well-suited for use as a coating for ultra hard tool bits and abrasives, especially those intended to use in cutting or otherwise fabricating iron.

Magnetic and magnetothermal studies of iron boride (FeB) nanoparticles

NASA Astrophysics Data System (ADS)

Hamayun, M. Asif; Abramchuk, Mykola; Alnasir, Hisham; Khan, Mohsin; Pak, Chongin; Lenhert, Steven; Ghazanfari, Lida; Shatruk, Michael; Manzoor, Sadia

2018-04-01

We report magnetic and magnetothermal properties of iron boride (FeB) nanoparticles prepared by surfactant-assisted ball milling of arc-melted bulk ingots of this binary alloy. Size-dependent magnetic properties were used to identify the transition to the single domain limit and calculate the anisotropy and exchange stiffness constants for this system. Extended milling is seen to produce coercivity enhancement and exchange bias of up to 270 Ôe at room temperature. The magnetothermal properties were investigated by measuring the response of single domain FeB nanoparticles to externally applied ac magnetic fields. All investigated particle sizes show a significant heating response, demonstrating their potential as candidates for magnetically induced hyperthermia. FeB nanoparticles were encapsulated into lipophilic domains of liposomes as evidenced by TEM. Exposure of HeLa cells to these liposomes did not affect cell viability, suggesting the biocompatibility of these new magnetic nanomaterials.

Measuring Nanoscale Heat Transfer for Gold-(Gallium Oxide)-Gallium Nitride Interfaces as a Function

NASA Astrophysics Data System (ADS)

Szwejkowski, Chester; Sun, Kai; Constantin, Costel; Giri, Ashutosh; Saltonstall, Christopher; Hopkins, Patrick; NanoSynCh Team; Exsite Team

2014-03-01

Gallium nitride (GaN) is considered the most important semiconductor after the discovery of Silicon. Understanding the properties of GaN is imperative in determining the utility and applicability of this class of materials to devices. We present results of time domain thermoreflectance (TDTR) measurements as a function of surface root mean square (RMS) roughness. We used commercially available 5mm x 5mm, single-side polished GaN (3-7 μm)/Sapphire (430 μm) substrates that have a Wurtzite crystal structure and are slightly n-type doped. The GaN substrates were annealed in the open atmosphere for 10 minutes (900-1000 °C). This high-temperature treatment produced RMS values from 1-60 nm and growth of gallium oxide (GaO) as measured with an atomic force microscopy and transmission electron microscopy respectively. A gold film (80nm) was deposited on the GaN surface using electron beam physical vapor deposition which was verified using ellipsometry and profilometry. The TDTR measurements suggest that the thermal conductivity decays exponentially with RMS roughness and that there is a minimum value for thermal boundary conductance at a roughness of 15nm.

Process for making transition metal nitride whiskers

DOEpatents

Bamberger, C.E.

1988-04-12

A process for making metal nitrides, particularly titanium nitride whiskers, using a cyanide salt as a reducing agent for a metal compound in the presence of an alkali metal oxide. Sodium cyanide, various titanates and titanium oxide mixed with sodium oxide react to provide titanium nitride whiskers that can be used as reinforcement to ceramic composites. 1 fig., 1 tab.

Ternary ceramic thermal spraying powder and method of manufacturing thermal sprayed coating using said powder

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vogli, Evelina; Sherman, Andrew J.; Glasgow, Curtis P.

The invention describes a method for producing ternary and binary ceramic powders and their thermal spraying capable of manufacturing thermal sprayed coatings with superior properties. Powder contain at least 30% by weight ternary ceramic, at least 20% by weight binary molybdenum borides, at least one of the binary borides of Cr, Fe, Ni, W and Co and a maximum of 10% by weight of nano and submicro-sized boron nitride. The primary crystal phase of the manufactured thermal sprayed coatings from these powders is a ternary ceramic, while the secondary phases are binary ceramics. The coatings have extremely high resistance againstmore » corrosion of molten metal, extremely thermal shock resistance and superior tribological properties at low and at high temperatures.« less

Exploring electrolyte preference of vanadium nitride supercapacitor electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Bo; Chen, Zhaohui; Lu, Gang

Highlights: • Hierarchical VN nanostructures were prepared on graphite foam. • Electrolyte preference of VN supercapacitor electrodes was explored. • VN showed better capacitive property in organic and alkaline electrolytes than LiCl. - Abstract: Vanadium nitride hierarchical nanostructures were prepared through an ammonia annealing procedure utilizing vanadium pentoxide nanostructures grown on graphite foam. The electrochemical properties of hierarchical vanadium nitride was tested in aqueous and organic electrolytes. As a result, the vanadium nitride showed better capacitive energy storage property in organic and alkaline electrolytes. This work provides insight into the charge storage process of vanadium nitride and our findings canmore » shed light on other transition metal nitride-based electrochemical energy storage systems.« less

Modeling the Gas Nitriding Process of Low Alloy Steels

NASA Astrophysics Data System (ADS)

Yang, M.; Zimmerman, C.; Donahue, D.; Sisson, R. D.

2013-07-01

The effort to simulate the nitriding process has been ongoing for the last 20 years. Most of the work has been done to simulate the nitriding process of pure iron. In the present work a series of experiments have been done to understand the effects of the nitriding process parameters such as the nitriding potential, temperature, and time as well as surface condition on the gas nitriding process for the steels. The compound layer growth model has been developed to simulate the nitriding process of AISI 4140 steel. In this paper the fundamentals of the model are presented and discussed including the kinetics of compound layer growth and the determination of the nitrogen diffusivity in the diffusion zone. The excellent agreements have been achieved for both as-washed and pre-oxided nitrided AISI 4140 between the experimental data and simulation results. The nitrogen diffusivity in the diffusion zone is determined to be constant and only depends on the nitriding temperature, which is ~5 × 10-9 cm2/s at 548 °C. It proves the concept of utilizing the compound layer growth model in other steels. The nitriding process of various steels can thus be modeled and predicted in the future.

Accurate atomistic potentials and training sets for boron-nitride nanostructures

NASA Astrophysics Data System (ADS)

Tamblyn, Isaac

Boron nitride nanotubes exhibit exceptional structural, mechanical, and thermal properties. They are optically transparent and have high thermal stability, suggesting a wide range of opportunities for structural reinforcement of materials. Modeling can play an important role in determining the optimal approach to integrating nanotubes into a supporting matrix. Developing accurate, atomistic scale models of such nanoscale interfaces embedded within composites is challenging, however, due to the mismatch of length scales involved. Typical nanotube diameters range from 5-50 nm, with a length as large as a micron (i.e. a relevant length-scale for structural reinforcement). Unlike their carbon-based counterparts, well tested and transferable interatomic force fields are not common for BNNT. In light of this, we have developed an extensive training database of BN rich materials, under conditions relevant for BNNT synthesis and composites based on extensive first principles molecular dynamics simulations. Using this data, we have produced an artificial neural network potential capable of reproducing the accuracy of first principles data at significantly reduced computational cost, allowing for accurate simulation at the much larger length scales needed for composite design.

Nanoscale current uniformity and injection efficiency of nanowire light emitting diodes

NASA Astrophysics Data System (ADS)

May, Brelon J.; Selcu, Camelia M.; Sarwar, A. T. M. G.; Myers, Roberto C.

2018-02-01

As an alternative to light emitting diodes (LEDs) based on thin films, nanowire based LEDs are the focus of recent development efforts in solid state lighting as they offer distinct photonic advantages and enable direct integration on a variety of different substrates. However, for practical nanowire LEDs to be realized, uniform electrical injection must be achieved through large numbers of nanowire LEDs. Here, we investigate the effect of the integration of a III-Nitride polarization engineered tunnel junction (TJ) in nanowire LEDs on Si on both the overall injection efficiency and nanoscale current uniformity. By using conductive atomic force microscopy (cAFM) and current-voltage (IV) analysis, we explore the link between the nanoscale nonuniformities and the ensemble devices which consist of many diodes wired in parallel. Nanometer resolved current maps reveal that the integration of a TJ on n-Si increases the amount of current a single nanowire can pass at a given applied bias by up to an order of magnitude, with the top 10% of wires passing more than ×3.5 the current of nanowires without a TJ. This manifests at the macroscopic level as a reduction in threshold voltage by more than 3 V and an increase in differential conductance as a direct consequence of the integration of the TJ. These results show the utility of cAFM to quantitatively probe the electrical inhomogeneities in as-grown nanowire ensembles without introducing uncertainty due to additional device processing steps, opening the door to more rapid development of nanowire ensemble based photonics.

Synthesis, Properties, and Applications Of Boron Nitride

NASA Technical Reports Server (NTRS)

Pouch, John J.; Alterovitz, Samuel A.

1993-01-01

Report describes synthesis, properties, and applications of boron nitride. Especially in thin-film form. Boron nitride films useful as masks in x-ray lithography; as layers for passivation of high-speed microelectronic circuits; insulating films; hard, wear-resistant, protective films for optical components; lubricants; and radiation detectors. Present status of single-crystal growth of boron nitride indicates promising candidate for use in high-temperature semiconductor electronics.

Synthesis of reduced carbon nitride at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C3N4)O

NASA Astrophysics Data System (ADS)

Kharlamov, Alexey; Bondarenko, Marina; Kharlamova, Ganna; Fomenko, Veniamin

2016-09-01

For the first time at the reduction by hydroquinone of water-soluble carbon nitride oxide (g-C3N4)O reduced carbon nitride (or reduced multi-layer azagraphene) is obtained. It is differed from usually synthesized carbon nitride by a significantly large (on 0.09 nm) interplanar distance is. At the same time, the chemical bonds between atoms in a heteroatomic plane of reduced carbon nitride correspond to the bonds in a synthesized g-C3N4. The samples of water-soluble carbon nitride oxide were synthesized under the special reactionary conditions of a pyrolysis of melamine and urea. We believe that reduced carbon nitride consists of weakly connected carbon-nitrogen monosheets (azagraphene sheets) as well as reduced (from graphene oxide) graphene contains weakly connected graphene sheets.

Electrochemical Solution Growth of Magnetic Nitrides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Monson, Todd C.; Pearce, Charles

Magnetic nitrides, if manufactured in bulk form, would provide designers of transformers and inductors with a new class of better performing and affordable soft magnetic materials. According to experimental results from thin films and/or theoretical calculations, magnetic nitrides would have magnetic moments well in excess of current state of the art soft magnets. Furthermore, magnetic nitrides would have higher resistivities than current transformer core materials and therefore not require the use of laminates of inactive material to limit eddy current losses. However, almost all of the magnetic nitrides have been elusive except in difficult to reproduce thin films or asmore » inclusions in another material. Now, through its ability to reduce atmospheric nitrogen, the electrochemical solution growth (ESG) technique can bring highly sought after (and previously inaccessible) new magnetic nitrides into existence in bulk form. This method utilizes a molten salt as a solvent to solubilize metal cations and nitrogen ions produced electrochemically and form nitrogen compounds. Unlike other growth methods, the scalable ESG process can sustain high growth rates (~mm/hr) even under reasonable operating conditions (atmospheric pressure and 500 °C). Ultimately, this translates into a high throughput, low cost, manufacturing process. The ESG process has already been used successfully to grow high quality GaN. Below, the experimental results of an exploratory express LDRD project to access the viability of the ESG technique to grow magnetic nitrides will be presented.« less

Method of nitriding refractory metal articles

DOEpatents

Tiegs, Terry N.; Holcombe, Cressie E.; Dykes, Norman L.; Omatete, Ogbemi O.; Young, Albert C.

1994-01-01

A method of nitriding a refractory-nitride forming metal or metalloid articles and composite articles. A consolidated metal or metalloid article or composite is placed inside a microwave oven and nitrogen containing gas is introduced into the microwave oven. The metal or metalloid article or composite is heated to a temperature sufficient to react the metal or metalloid with the nitrogen by applying a microwave energy within the microwave oven. The metal or metalloid article or composite is maintained at that temperature for a period of time sufficient to convert the article of metal or metalloid or composite to an article or composite of refractory nitride. In addition, a method of applying a coating, such as a coating of an oxide, a carbide, or a carbo-nitride, to an article of metal or metalloid by microwave heating.

Method of nitriding refractory metal articles

DOEpatents

Tiegs, T.N.; Holcombe, C.E.; Dykes, N.L.; Omatete, O.O.; Young, A.C.

1994-03-15

A method of nitriding a refractory-nitride forming metal or metalloid articles and composite articles. A consolidated metal or metalloid article or composite is placed inside a microwave oven and nitrogen containing gas is introduced into the microwave oven. The metal or metalloid article or composite is heated to a temperature sufficient to react the metal or metalloid with the nitrogen by applying a microwave energy within the microwave oven. The metal or metalloid article or composite is maintained at that temperature for a period of time sufficient to convert the article of metal or metalloid or composite to an article or composite of refractory nitride. In addition, a method of applying a coating, such as a coating of an oxide, a carbide, or a carbo-nitride, to an article of metal or metalloid by microwave heating.

Uranium nitride behavior at thermionic temperatures

NASA Technical Reports Server (NTRS)

Phillips, W. M.

1973-01-01

The feasibility of using uranium nitride for in-core thermionic applications was evaluated in electrically heated thermal gradient tests and in flat plate thermionic converters. These tests indicated that grain boundary penetration of uranium nitride into both tungsten and rhenium will occur under thermal gradient conditions. In the case of the tungsten thermionic converter, this led to grain boundary rupture of the emitter and almost total loss of electrical output from the converter. It appears that uranium nitride is unsuitable for thermionic applications at the 2000 K temperatures used in these tests.

Crystal structures and compressibility of novel iron borides Fe{sub 2}B{sub 7} and Fe{sub x}B{sub 50} synthesized at high pressure and high temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bykova, E., E-mail: elena.bykova@uni-bayreuth.de; Laboratory of Crystallography, University of Bayreuth, D-95440 Bayreuth; Gou, H.

2015-10-15

We present here a detailed description of the crystal structures of novel iron borides, Fe{sub 2}B{sub 7} and Fe{sub x}B{sub 50} with various iron content (x=1.01(1), 1.04(1), 1.32(1)), synthesized at high pressures and high temperatures. As revealed by high-pressure single-crystal X-ray diffraction, the structure of Fe{sub 2}B{sub 7} possesses short incompressible B–B bonds, which make it as stiff as diamond in one crystallographic direction. The volume compressibility of Fe{sub 2}B{sub 7} (the bulk modulus K{sub 0}= 259(1.8) GPa, K{sub 0}′= 4 (fixed)) is even lower than that of FeB{sub 4} and comparable with that of MnB{sub 4}, known for highmore » bulk moduli among 3d metal borides. Fe{sub x}B{sub 50} adopts the structure of the tetragonal δ-B, in which Fe atoms occupy an interstitial position. Fe{sub x}B{sub 50} does not show considerable anisotropy in the elastic behavior. - Graphical abstract: Crystal structures of novel iron borides, Fe{sub 2}B{sub 7} and Fe{sub x}B{sub 50} (x=1.01(1), 1.04(1), 1.32(1)). - Highlights: • Novel iron borides, Fe{sub 2}B{sub 7} and Fe{sub x}B{sub 50}, were synthesized under HPHT conditions. • Fe{sub 2}B{sub 7} has a unique orthorhombic structure (space group Pbam). • Fe{sub 2}B{sub 7} possesses short incompressible B–B bonds that results in high bulk modulus. • Fe{sub x}B{sub 50} adopts the structure of the tetragonal δ-B composed of B{sub 12} icosahedra. • In Fe{sub x}B{sub 50} intraicosahedral bonds are stiffer than intericosahedral ones.« less

Investigation of the thermophysical properties of high-melting materials with the aid of a complex of instruments

NASA Technical Reports Server (NTRS)

Bolgar, A. S.; Gordiyenko, S. P.; Guseva, Y. A.; Turchanin, A. G.; Fenochka, B. V.; Fesenko, V. V.

1984-01-01

The evaporation rate, vapor pressure, heats of evaporation reaction (sublimation, dissociation), enthalpy, electrical resistance, heat capacity, emissivity, and heat conductivity of various carbides, borides, sulfides, nitrides, selenides, and phosphides were investigated. A set of high temperature high vacuum devices, calorimeters (designed for operation at 400 to 1300 K and from 1200 K), and mass spectrometers, most of which were specially developed for these studies, is described.

Rocket Science at the Nanoscale.

PubMed

Li, Jinxing; Rozen, Isaac; Wang, Joseph

2016-06-28

Autonomous propulsion at the nanoscale represents one of the most challenging and demanding goals in nanotechnology. Over the past decade, numerous important advances in nanotechnology and material science have contributed to the creation of powerful self-propelled micro/nanomotors. In particular, micro- and nanoscale rockets (MNRs) offer impressive capabilities, including remarkable speeds, large cargo-towing forces, precise motion controls, and dynamic self-assembly, which have paved the way for designing multifunctional and intelligent nanoscale machines. These multipurpose nanoscale shuttles can propel and function in complex real-life media, actively transporting and releasing therapeutic payloads and remediation agents for diverse biomedical and environmental applications. This review discusses the challenges of designing efficient MNRs and presents an overview of their propulsion behavior, fabrication methods, potential rocket fuels, navigation strategies, practical applications, and the future prospects of rocket science and technology at the nanoscale.

Thermodynamic Routes to Novel Metastable Nitrogen-Rich Nitrides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Wenhao; Holder, Aaron; Orvañanos, Bernardo

Compared to oxides, the nitrides are relatively unexplored, making them a promising chemical space for novel materials discovery. Of particular interest are nitrogen-rich nitrides, which often possess useful semiconducting properties for electronic and optoelectronic applications. However, such nitrogen-rich compounds are generally metastable, and the lack of a guiding theory for their synthesis has limited their exploration. Here, we review the remarkable metastability of observed nitrides, and examine the thermodynamics of how reactive nitrogen precursors can stabilize metastable nitrogen-rich compositions during materials synthesis. We map these thermodynamic strategies onto a predictive computational search, training a data-mined ionic substitution algorithm specifically formore » nitride discovery, which we combine with grand-canonical DFT-SCAN phase stability calculations to compute stabilizing nitrogen chemical potentials. We identify several new nitrogen-rich binary nitrides for experimental investigation, notably the transition metal nitrides Mn3N4, Cr3N4, V3N4, and Nb3N5, the main group nitride SbN, and the pernitrides FeN2, CrN2, and Cu2N2. By formulating rational thermodynamic routes to metastable compounds, we expand the search space for functional technological materials beyond equilibrium phases and compositions.« less

Thermodynamic Routes to Novel Metastable Nitrogen-Rich Nitrides

DOE PAGES

Sun, Wenhao; Holder, Aaron; Orvañanos, Bernardo; ...

2017-07-17

Compared to oxides, the nitrides are relatively unexplored, making them a promising chemical space for novel materials discovery. Of particular interest are nitrogen-rich nitrides, which often possess useful semiconducting properties for electronic and optoelectronic applications. However, such nitrogen-rich compounds are generally metastable, and the lack of a guiding theory for their synthesis has limited their exploration. Here, we review the remarkable metastability of observed nitrides, and examine the thermodynamics of how reactive nitrogen precursors can stabilize metastable nitrogen-rich compositions during materials synthesis. We map these thermodynamic strategies onto a predictive computational search, training a data-mined ionic substitution algorithm specifically formore » nitride discovery, which we combine with grand-canonical DFT-SCAN phase stability calculations to compute stabilizing nitrogen chemical potentials. We identify several new nitrogen-rich binary nitrides for experimental investigation, notably the transition metal nitrides Mn3N4, Cr3N4, V3N4, and Nb3N5, the main group nitride SbN, and the pernitrides FeN2, CrN2, and Cu2N2. By formulating rational thermodynamic routes to metastable compounds, we expand the search space for functional technological materials beyond equilibrium phases and compositions.« less

Electrochemical nitridation of metal surfaces

DOEpatents

Wang, Heli; Turner, John A.

2015-06-30

Electrochemical nitridation of metals and the produced metals are disclosed. An exemplary method of electrochemical nitridation of metals comprises providing an electrochemical solution at low temperature. The method also comprises providing a three-electrode potentiostat system. The method also comprises stabilizing the three-electrode potentiostat system at open circuit potential. The method also comprises applying a cathodic potential to a metal.

Feasibility study of silicon nitride regenerators

NASA Technical Reports Server (NTRS)

Fucinari, C. A.; Rao, V. D. N.

1979-01-01

The feasibility of silicon nitride as a regenerator matrix material for applications requiring inlet temperatures above 1000 C is examined. The present generation oxide ceramics are used as a reference to examine silicon nitride from a material characteristics, manufacturing, thermal stress and aerothermodynamic viewpoint.

High efficiency III-nitride light-emitting diodes

DOEpatents

Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

2013-05-28

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

Method of preparation of uranium nitride

DOEpatents

Kiplinger, Jaqueline Loetsch; Thomson, Robert Kenneth James

2013-07-09

Method for producing terminal uranium nitride complexes comprising providing a suitable starting material comprising uranium; oxidizing the starting material with a suitable oxidant to produce one or more uranium(IV)-azide complexes; and, sufficiently irradiating the uranium(IV)-azide complexes to produce the terminal uranium nitride complexes.

Feasibility study of silicon nitride protection of plastic encapsulated semiconductors

NASA Technical Reports Server (NTRS)

Peters, J. W.; Hall, T. C.; Erickson, J. J.; Gebhart, F. L.

1979-01-01

The application of low temperature silicon nitride protective layers on wire bonded integrated circuits mounted on lead frame assemblies is reported. An evaluation of the mechanical and electrical compatibility of both plasma nitride and photochemical silicon nitride (photonitride) passivations (parallel evaluations) of integrated circuits which were then encapsulated in plastic is described. Photonitride passivation is compatible with all wire bonded lead frame assemblies, with or without initial chip passivation. Plasma nitride passivation of lead frame assemblies is possible only if the chip is passivated before lead frame assembly. The survival rate after the environmental test sequence of devices with a coating of plasma nitride on the chip and a coating of either plasma nitride or photonitride over the assembled device is significantly greater than that of devices assembled with no nitride protective coating over either chip or lead frame.

Nanoscale Ionic Liquids

DTIC Science & Technology

2006-11-01

Technical Report 11 December 2005 - 30 November 2006 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Nanoscale Ionic Liquids 5b. GRANT NUMBER FA9550-06-1-0012...Title: Nanoscale Ionic Liquids Principal Investigator: Emmanuel P. Giannelis Address: Materials Science and Engineering, Bard Hall, Cornell University...based fluids exhibit high ionic conductivity. The NFs are typically synthesized by grafting a charged, oligomeric corona onto the nanoparticle cores

Method for producing refractory nitrides

DOEpatents

Quinby, Thomas C.

1989-01-24

A process for making fine, uniform metal nitride powders that can be hot pressed or sintered. A metal salt is placed in a solvent with Melamine and warmed until a metal-Melamine compound forms. The solution is cooled and the metal-Melamine precipitate is calcined at a temperature below 700.degree. C. to form the metal nitrides and to avoid formation of the metal oxide.

Liquid flow cells having graphene on nitride for microscopy

DOEpatents

Adiga, Vivekananda P.; Dunn, Gabriel; Zettl, Alexander K.; Alivisatos, A. Paul

2016-09-20

This disclosure provides systems, methods, and apparatus related to liquid flow cells for microscopy. In one aspect, a device includes a substrate having a first and a second oxide layer disposed on surfaces of the substrate. A first and a second nitride layer are disposed on the first and second oxide layers, respectively. A cavity is defined in the first oxide layer, the first nitride layer, and the substrate, with the cavity including a third nitride layer disposed on walls of the substrate and the second oxide layer that define the cavity. A channel is defined in the second oxide layer. An inlet port and an outlet port are defined in the second nitride layer and in fluid communication with the channel. A plurality of viewports is defined in the second nitride layer. A first graphene sheet is disposed on the second nitride layer covering the plurality of viewports.

Graphitic Carbon Nitride Supported Catalysts for Polymer Electrolyte Fuel Cells

PubMed Central

2014-01-01

Graphitic carbon nitrides are investigated for developing highly durable Pt electrocatalyst supports for polymer electrolyte fuel cells (PEFCs). Three different graphitic carbon nitride materials were synthesized with the aim to address the effect of crystallinity, porosity, and composition on the catalyst support properties: polymeric carbon nitride (gCNM), poly(triazine) imide carbon nitride (PTI/Li+Cl–), and boron-doped graphitic carbon nitride (B-gCNM). Following accelerated corrosion testing, all graphitic carbon nitride materials are found to be more electrochemically stable compared to conventional carbon black (Vulcan XC-72R) with B-gCNM support showing the best stability. For the supported catalysts, Pt/PTI-Li+Cl– catalyst exhibits better durability with only 19% electrochemical surface area (ECSA) loss versus 36% for Pt/Vulcan after 2000 scans. Superior methanol oxidation activity is observed for all graphitic carbon nitride supported Pt catalysts on the basis of the catalyst ECSA. PMID:24748912

Method of densifying an article formed of reaction bonded silicon nitride

NASA Technical Reports Server (NTRS)

Mangels, John A. (Inventor)

1982-01-01

A method of densifying an article formed of reaction bonded silicon nitride is disclosed. The reaction bonded silicon nitride article is packed in a packing mixture consisting of silicon nitride powder and a densification aid. The reaction bonded silicon nitride article and packing powder are sujected to a positive, low pressure nitrogen gas treatment while being heated to a treatment temperature and for a treatment time to cause any open porosity originally found in the reaction bonded silicon nitride article to be substantially closed. Thereafter, the reaction bonded silicon nitride article and packing powder are subjected to a positive high pressure nitrogen gas treatment while being heated to a treatment temperature and for a treatment time to cause a sintering of the reaction bonded silicon nitride article whereby the strength of the reaction bonded silicon nitride article is increased.

Nano-particulate Aluminium Nitride/Al: An Efficient and Versatile Heterogeneous Catalyst for the Synthesis of Biginelli Scaffolds

NASA Astrophysics Data System (ADS)

Tekale, S. U.; Tekale, A. B.; Kanhe, N. S.; Bhoraskar, S. V.; Pawar, R. P.

2011-12-01

Nano-particulate aluminium nitride/Al (7:1) is reported as a new heterogeneous solid acid catalyst for the synthesis of 3, 4-dihydroxypyrimidi-2-(1H)-ones and their sulphur analogues using the Biginelli reaction. This method involves short reaction time, easy separation, high yields and purity of products.

Ceramic fibers from Si-B-C polymer precursors

NASA Technical Reports Server (NTRS)

Riccitiello, S. R.; Hsu, M. S.; Chen, T. S.

1993-01-01

Non-oxide ceramics such as silicon carbide (SiC), silicon nitride (Si3N4), and silicon borides (SiB4, SiB6) have thermal stability, oxidation resistance, hardness, and varied electrical properties. All these materials can be prepared in a fiber form from a suitable polymer precursor. The above mentioned fibers, when tested over a temperature range from 25 to 1400 C, experience degradation at elevated temperatures. Past work in ceramic materials has shown that the strength of ceramics containing both carbides and borides is sustained at elevated temperatures, with minimum oxidation. The work presented here describes the formation of ceramic fibers containing both elements, boron and silicon, prepared via the polymer precursor route previously reported by the authors, and discusses the fiber mechanical properties that are retained over the temperature range studied.

Friction laws at the nanoscale.

PubMed

Mo, Yifei; Turner, Kevin T; Szlufarska, Izabela

2009-02-26

Macroscopic laws of friction do not generally apply to nanoscale contacts. Although continuum mechanics models have been predicted to break down at the nanoscale, they continue to be applied for lack of a better theory. An understanding of how friction force depends on applied load and contact area at these scales is essential for the design of miniaturized devices with optimal mechanical performance. Here we use large-scale molecular dynamics simulations with realistic force fields to establish friction laws in dry nanoscale contacts. We show that friction force depends linearly on the number of atoms that chemically interact across the contact. By defining the contact area as being proportional to this number of interacting atoms, we show that the macroscopically observed linear relationship between friction force and contact area can be extended to the nanoscale. Our model predicts that as the adhesion between the contacting surfaces is reduced, a transition takes place from nonlinear to linear dependence of friction force on load. This transition is consistent with the results of several nanoscale friction experiments. We demonstrate that the breakdown of continuum mechanics can be understood as a result of the rough (multi-asperity) nature of the contact, and show that roughness theories of friction can be applied at the nanoscale.

Nanotribological response of a plasma nitrided bio-steel.

PubMed

Samanta, Aniruddha; Chakraborty, Himel; Bhattacharya, Manjima; Ghosh, Jiten; Sreemany, Monjoy; Bysakh, Sandip; Rane, Ramkrishna; Joseph, Alphonsa; Jhala, Ghanshyam; Mukherjee, Subroto; Das, Mitun; Mukhopadhyay, Anoop K

2017-01-01

AISI 316L is a well known biocompatible, austenitic stainless steel (SS). It is thus a bio-steel. Considering its importance as a bio-prosthesis material here we report the plasma nitriding of AISI 316L (SS) followed by its microstructural and nanotribological characterization. Plasma nitriding of the SS samples was carried out in a plasma reactor with a hot wall vacuum chamber. For ease of comparison these plasma nitrided samples were termed as SSPN. The experimental results confirmed the formations of an embedded nitrided metal layer zone (ENMLZ) and an interface zone (IZ) between the ENMLZ and the unnitrided bulk metallic layer zone (BMLZ) in the SSPN sample. These ENMLZ and IZ in the SSPN sample were richer in iron nitride (FeN) chromium nitride (CrN) along with the austenite phase. The results from nanoindentation, microscratch, nanoscratch and sliding wear studies confirmed that the static contact deformation resistance, the microwear, nanowear and sliding wear resistance of the SSPN samples were much better than those of the SS samples. These results were explained in terms of structure-property correlations. Copyright © 2016 Elsevier Ltd. All rights reserved.

Boron nitride converted carbon fiber

DOEpatents

Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

2016-04-05

This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

Mesoporous coaxial titanium nitride-vanadium nitride fibers of core-shell structures for high-performance supercapacitors.

PubMed

Zhou, Xinhong; Shang, Chaoqun; Gu, Lin; Dong, Shanmu; Chen, Xiao; Han, Pengxian; Li, Lanfeng; Yao, Jianhua; Liu, Zhihong; Xu, Hongxia; Zhu, Yuwei; Cui, Guanglei

2011-08-01

In this study, titanium nitride-vanadium nitride fibers of core-shell structures were prepared by the coaxial electrospinning, and subsequently annealed in the ammonia for supercapacitor applications. These core-shell (TiN-VN) fibers incorporated mesoporous structure into high electronic conducting transition nitride hybrids, which combined higher specific capacitance of VN and better rate capability of TiN. These hybrids exhibited higher specific capacitance (2 mV s(-1), 247.5 F g(-1)) and better rate capability (50 mV s(-1), 160.8 F g(-1)), which promise a good candidate for high-performance supercapacitors. It was also revealed by electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectroscopy (XPS) characterization that the minor capacitance fade originated from the surface oxidation of VN and TiN.

Aluminum nitride insulating films for MOSFET devices

NASA Technical Reports Server (NTRS)

Lewicki, G. W.; Maserjian, J.

1972-01-01

Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Electrical properties of aluminum nitrides are analyzed and specific use with field effect transistors is defined. Operational limits of field effect transistors are developed.

77 FR 51825 - Ferrovanadium and Nitrided Vanadium From Russia

Federal Register 2010, 2011, 2012, 2013, 2014

2012-08-27

... Nitrided Vanadium From Russia Determination On the basis of the record \\1\\ developed in the subject five... order on ferrovanadium and nitrided vanadium from Russia would not be likely to lead to continuation or... in USITC Publication 4345 (August 2012), entitled Ferrovanadium and Nitrided Vanadium from Russia...

Low-loss binder for hot pressing boron nitride

DOEpatents

Maya, Leon

1991-01-01

Borazine derivatives used as low-loss binders and precursors for making ceramic boron nitride structures. The derivative forms the same composition as the boron nitride starting material, thereby filling the voids with the same boron nitride material upon forming and hot pressing. The derivatives have a further advantage of being low in carbon thus resulting in less volatile byproduct that can result in bubble formation during pressing.

Spherical boron nitride particles and method for preparing them

DOEpatents

Phillips, Jonathan; Gleiman, Seth S.; Chen, Chun-Ku

2003-11-25

Spherical and polyhedral particles of boron nitride and method of preparing them. Spherical and polyhedral particles of boron nitride are produced from precursor particles of hexagonal phase boron nitride suspended in an aerosol gas. The aerosol is directed to a microwave plasma torch. The torch generates plasma at atmospheric pressure that includes nitrogen atoms. The presence of nitrogen atoms is critical in allowing boron nitride to melt at atmospheric pressure while avoiding or at least minimizing decomposition. The plasma includes a plasma hot zone, which is a portion of the plasma that has a temperature sufficiently high to melt hexagonal phase boron nitride. In the hot zone, the precursor particles melt to form molten particles that acquire spherical and polyhedral shapes. These molten particles exit the hot zone, cool, and solidify to form solid particles of boron nitride with spherical and polyhedral shapes. The molten particles can also collide and join to form larger molten particles that lead to larger spherical and polyhedral particles.

The Hardest Superconducting Metal Nitride

NASA Astrophysics Data System (ADS)

Wang, Shanmin; Antonio, Daniel; Yu, Xiaohui; Zhang, Jianzhong; Cornelius, Andrew L.; He, Duanwei; Zhao, Yusheng

2015-09-01

Transition-metal (TM) nitrides are a class of compounds with a wide range of properties and applications. Hard superconducting nitrides are of particular interest for electronic applications under working conditions such as coating and high stress (e.g., electromechanical systems). However, most of the known TM nitrides crystallize in the rock-salt structure, a structure that is unfavorable to resist shear strain, and they exhibit relatively low indentation hardness, typically in the range of 10-20 GPa. Here, we report high-pressure synthesis of hexagonal δ-MoN and cubic γ-MoN through an ion-exchange reaction at 3.5 GPa. The final products are in the bulk form with crystallite sizes of 50 - 80 μm. Based on indentation testing on single crystals, hexagonal δ-MoN exhibits excellent hardness of ~30 GPa, which is 30% higher than cubic γ-MoN (~23 GPa) and is so far the hardest among the known metal nitrides. The hardness enhancement in hexagonal phase is attributed to extended covalently bonded Mo-N network than that in cubic phase. The measured superconducting transition temperatures for δ-MoN and cubic γ-MoN are 13.8 and 5.5 K, respectively, in good agreement with previous measurements.

Safety Assessment of Boron Nitride as Used in Cosmetics.

PubMed

Fiume, Monice M; Bergfeld, Wilma F; Belsito, Donald V; Hill, Ronald A; Klaassen, Curtis D; Liebler, Daniel C; Marks, James G; Shank, Ronald C; Slaga, Thomas J; Snyder, Paul W; Andersen, F Alan

2015-01-01

The Cosmetic Ingredient Review Expert Panel (Panel) assessed the safety of boron nitride which functions in cosmetics as a slip modifier (ie, it has a lubricating effect). Boron nitride is an inorganic compound with a crystalline form that can be hexagonal, spherical, or cubic; the hexagonal form is presumed to be used in cosmetics. The highest reported concentration of use of boron nitride is 25% in eye shadow formulations. Although boron nitride nanotubes are produced, boron nitride is not listed as a nanomaterial used in cosmetic formulations. The Panel reviewed available chemistry, animal data, and clinical data and concluded that this ingredient is safe in the present practices of use and concentration in cosmetic formulations. © The Author(s) 2015.

Nanoscale Reactive Ion Etching of Silicon Nitride Thin Films for Embedded Nanomagnetic Device Fabrication

NASA Astrophysics Data System (ADS)

Hibbard-Lubow, David Luke

The demands of digital memory have increased exponentially in recent history, requiring faster, smaller and more accurate storage methods. Two promising solutions to this ever-present problem are Bit Patterned Media (BPM) and Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM). Producing these technologies requires difficult and expensive fabrication techniques. Thus, the production processes must be optimized to allow these storage methods to compete commercially while continuing to increase their information storage density and reliability. I developed a process for the production of nanomagnetic devices (which can take the form of several types of digital memory) embedded in thin silicon nitride films. My focus was on optimizing the reactive ion etching recipe required to embed the device in the film. Ultimately, I found that recipe 37 (Power: 250W, CF4 nominal/actual flow rate: 25/25.4 sccm, O2 nominal/actual flow rate: 3.1/5.2 sccm, which gave a maximum pressure around 400 mTorr) gave the most repeatable and anisotropic results. I successfully used processes described in this thesis to make embedded nanomagnets, which could be used as bit patterned media. Another promising application of this work is to make embedded magnetic tunneling junctions, which are the storage medium used in MRAM. Doing so will require still some tweaks to the fabrication methods. Techniques for making these changes and their potential effects are discussed.

Structure refinement for tantalum nitrides nanocrystals with various morphologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Lianyun; School of Science, Beijing Jiaotong University, 3 Shang Yuan Cun, Haidian District, Beijing 100044; Huang, Kai

2012-07-15

Graphical abstract: Tantalum nitrides nanocrystals with various phases and morphologies for the first time have been synthesized through homogenous sodium reduction under low temperature with the subsequent annealing process under high vacuum. Highlights: ► The spherical TaN, cuboidal TaN{sub 0.83} and TaN{sub 0.5} nanocrystals have been synthesized through homogenous sodium reduction under low temperature with the subsequent annealing process under high vacuum. ► The crystal structures of different tantalum nitrides were determined by Rietveld refinement on the X-ray diffraction data and the examinations of electron microcopies. ► The specific surface area of the tantalum nitrides powders was around 10 m{supmore » 2} g{sup −1}. ► Tantalum nitrides powders could be suitable for capacitor with high specific capacitance. -- Abstract: Tantalum nitrides (TaN{sub x}) nanocrystals with different phase and morphology have been synthesized through homogenous sodium reduction under low temperature with the subsequent annealing process under high vacuum. The crystal structures of tantalum nitrides were determined by Rietveld refinement based on the X-ray diffraction data. The morphologies of various tantalum nitrides nanocrystals in high quality were analyzed through the electron microcopies examinations. The spherical TaN nanoparticles, cuboidal TaN{sub 0.83} and TaN{sub 0.5} nanocrystals have been selectively prepared at different annealing temperatures. In addition, the specific surface areas of the tantalum nitrides nanocrystals measured by BET method were around 9.87–11.64 m{sup 2} g{sup −1}, indicating that such nano-sized tantalum nitrides could be suitable for capacitor with high specific capacitance.« less

Additive Manufacturing of Dense Hexagonal Boron Nitride Objects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marquez Rossy, Andres E.; Armstrong, Beth L.; Elliott, Amy M.

The feasibility of manufacturing hexagonal boron nitride objects via additive manufacturing techniques was investigated. It was demonstrated that it is possible to hot-extrude thermoplastic filaments containing uniformly distributed boron nitride particles with a volume concentration as high as 60% and that these thermoplastic filaments can be used as feedstock for 3D-printing objects using a fused deposition system. Objects 3D-printed by fused deposition were subsequently sintered at high temperature to obtain dense ceramic products. In a parallel study the behavior of hexagonal boron nitride in aqueous solutions was investigated. It was shown that the addition of a cationic dispersant to anmore » azeotrope enabled the formulation of slurries with a volume concentration of boron nitride as high as 33%. Although these slurries exhibited complex rheological behavior, the results from this study are encouraging and provide a pathway for manufacturing hexagonal boron nitride objects via robocasting.« less

Nanowire-templated lateral epitaxial growth of non-polar group III nitrides

DOEpatents

Wang, George T [Albuquerque, NM; Li, Qiming [Albuquerque, NM; Creighton, J Randall [Albuquerque, NM

2010-03-02

A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.

Boron Nitride Nanotubes for Engineering Applications

NASA Technical Reports Server (NTRS)

Hurst, Janet; Hull, David; Gorican, Daniel

2005-01-01

Boron nitride nanotubes (BNNT) are of significant interest to the scientific and technical communities for many of the same reasons that carbon nanotubes (CNT) have attracted wide attention. Both materials have potentially unique and important properties for structural and electronic applications. However of even more consequence than their similarities may be the complementary differences between carbon and boron nitride nanotubes While BNNT possess a very high modulus similar to CNT, they also possess superior chemical and thermal stability. Additionally, BNNT have more uniform electronic properties, with a uniform band gap of 5.5 eV while CNT vary from semi-conductive to highly conductive behavior. Boron nitride nanotubes have been synthesized both in the literature and at NASA Glenn Research Center, by a variety of methods such as chemical vapor deposition, arc discharge and reactive milling. Consistent large scale production of a reliable product has proven difficult. Progress in the reproducible synthesis of 1-2 gram sized batches of boron nitride nanotubes will be discussed as well as potential uses for this unique material.

Structural, electronic and magnetic properties of carbon doped boron nitride nanowire: Ab initio study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jalilian, Jaafar, E-mail: JaafarJalilian@gmail.com; Kanjouri, Faramarz, E-mail: kanjouri@khu.ac.ir

2016-11-15

Using spin-polarized density functional theory calculations, we demonstrated that carbon doped boron nitride nanowire (C-doped BNNW) has diverse electronic and magnetic properties depending on position of carbon atoms and their percentages. Our results show that only when one carbon atom is situated on the edge of the nanowire, C-doped BNNW is transformed into half-metal. The calculated electronic structure of the C-doped BNNW suggests that doping carbon can induce localized edge states around the Fermi level, and the interaction among localized edge states leads to semiconductor to half-metal transition. Overall, the bond reconstruction causes of appearance of different electronic behavior suchmore » as semiconducting, half-metallicity, nonmagnetic metallic, and ferromagnetic metallic characters. The formation energy of the system shows that when a C atom is doped on surface boron site, system is more stable than the other positions of carbon impurity. Our calculations show that C-doped BNNW may offer unique opportunities for developing nanoscale spintronic materials.« less

Nitride microlens arrays for blue and ultraviolet wavelength applications

NASA Astrophysics Data System (ADS)

Oder, T. N.; Shakya, J.; Lin, J. Y.; Jiang, H. X.

2003-05-01

Nitride microlens arrays with sizes as small as 10 μm in diameter have been fabricated on GaN and AlN epilayers using the method of photoresist reflow and inductively coupled plasma dry etching. The focal lengths of the microlenses varied from 7-30 μm as determined by theoretical fitting as well as by the near-field scanning optical microscopy measurement. Scanning electron and atomic force microscopies were used to obtain the surface profile of the microlenses which were found to match very well with hemispherical fitting and a surface roughness value around 1 nm was obtained. Nitride microlens arrays would be naturally chosen for green/blue to deep ultraviolet wavelength applications. In addition, nitride microlenses offer the possibility of integrating nitride-based microsize photonic devices as well as of coupling light into, out of, and between arrays of III-nitride emitters for other applications, such as spatially resolved fluorescence spectroscopy studies of biological and medical systems and optical links, thereby further expanding the applications of III nitrides.

A superconducting battery material: Lithium gold boride (LiAu3B)

NASA Astrophysics Data System (ADS)

Aydin, Sezgin; Şimşek, Mehmet

2018-04-01

The superconducting and potential cathode material properties of ternary boride of LiAu3B have been investigated by density functional first principles. The Li-concentration effects on the actual electronic and structural properties, namely the properties of LixAu9B3 (x = 0, 1, 2) sub-systems are studied. It is remarkably shown that the existence of Li-atoms has no considerable effect on the structural properties of Au-B skeleton in LiAu3B. Then, it can be offered as a potential cathode material for Li-ion batteries with the very small volume deviation of 0.42%, and the suitable average open circuit voltage of ∼1.30 V. Furthermore, the vibrational and superconducting properties such as electron-phonon coupling constant (λ) and critical temperature (Tc) of LiAu3B are studied. The calculated results suggest that LiAu3B should be a superconductor with Tc ∼5.8 K, also.

Plasmonic spectral tunability of conductive ternary nitrides

NASA Astrophysics Data System (ADS)

Kassavetis, S.; Bellas, D. V.; Abadias, G.; Lidorikis, E.; Patsalas, P.

2016-06-01

Conductive binary transition metal nitrides, such as TiN and ZrN, have emerged as a category of promising alternative plasmonic materials. In this work, we show that ternary transition metal nitrides such as TixTa1-xN, TixZr1-xN, TixAl1-xN, and ZrxTa1-xN share the important plasmonic features with their binary counterparts, while having the additional asset of the exceptional spectral tunability in the entire visible (400-700 nm) and UVA (315-400 nm) spectral ranges depending on their net valence electrons. In particular, we demonstrate that such ternary nitrides can exhibit maximum field enhancement factors comparable with gold in the aforementioned broadband range. We also critically evaluate the structural features that affect the quality factor of the plasmon resonance and we provide rules of thumb for the selection and growth of materials for nitride plasmonics.

An evaluation method for nanoscale wrinkle

NASA Astrophysics Data System (ADS)

Liu, Y. P.; Wang, C. G.; Zhang, L. M.; Tan, H. F.

2016-06-01

In this paper, a spectrum-based wrinkling analysis method via two-dimensional Fourier transformation is proposed aiming to solve the difficulty of nanoscale wrinkle evaluation. It evaluates the wrinkle characteristics including wrinkling wavelength and direction simply using a single wrinkling image. Based on this method, the evaluation results of nanoscale wrinkle characteristics show agreement with the open experimental results within an error of 6%. It is also verified to be appropriate for the macro wrinkle evaluation without scale limitations. The spectrum-based wrinkling analysis is an effective method for nanoscale evaluation, which contributes to reveal the mechanism of nanoscale wrinkling.

Dispersible shortened boron nitride nanotubes with improved molecule-loading capacity.

PubMed

Zhi, Chunyi; Hanagata, Nobutaka; Bando, Yoshio; Golberg, Dmitri

2011-09-05

The oxidation process of boron nitride nanotubes was thoroughly investigated, and a slow oxidation characteristic was clearly revealed. Subsequently, the controllable oxidation process was utilized to break the sturdy structure of the boron nitride nanotubes to fabricate shortened nanotubes. The shortened boron nitride nanotubes were found to possess good solubility in water and many organic solvents. Further experiments demonstrated remarkably improved molecule-loading capacity of the shortened boron nitride nanotubes. These dispersible shortened boron nitride nanotubes might have the potential to be developed as effective delivery systems for various molecules, which may find applications in bio-related fields. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fine structure of the K X-ray absorption spectra of titanium in some hydrides, borides, and silicides (in Russian)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vainshtein, �. E.; Zhurakovskii, E. A.

1959-08-01

X-ray spectral analyses confirmed the hypothesis on the metal-like state of hydrogen in tithnium hydrides. Experiments with titunium borides and silicides indicate the special character and degree of the 3d--level participation in the metallic'' bond between the atoms of various complexes. The structure of metalloid elements becomes more complicated with an increase in the specific number of boron and silicon atoms and the bond between the atoms tends to become covalent. (R.V.J.)

The Hardest Superconducting Metal Nitride

DOE PAGES

Wang, Shanmin; Antonio, Daniel; Yu, Xiaohui; ...

2015-09-03

Transition–metal (TM) nitrides are a class of compounds with a wide range of properties and applications. Hard superconducting nitrides are of particular interest for electronic applications under working conditions such as coating and high stress (e.g., electromechanical systems). However, most of the known TM nitrides crystallize in the rock–salt structure, a structure that is unfavorable to resist shear strain, and they exhibit relatively low indentation hardness, typically in the range of 10–20 GPa. Here, we report high–pressure synthesis of hexagonal δ–MoN and cubic γ–MoN through an ion–exchange reaction at 3.5 GPa. The final products are in the bulk form withmore » crystallite sizes of 50 – 80 μm. Based on indentation testing on single crystals, hexagonal δ–MoN exhibits excellent hardness of ~30 GPa, which is 30% higher than cubic γ–MoN (~23 GPa) and is so far the hardest among the known metal nitrides. The hardness enhancement in hexagonal phase is attributed to extended covalently bonded Mo–N network than that in cubic phase. The measured superconducting transition temperatures for δ–MoN and cubic γ–MoN are 13.8 and 5.5 K, respectively, in good agreement with previous measurements.« less

Endocytosis of Nanoscale Systems for Cancer Treatments.

PubMed

Chen, Kai; Li, Xue; Zhu, Hongyan; Gong, Qiyong; Luo, Kui

2017-04-28

Advances of nanoscale systems for cancer treatment have been involved in enabling highly regulated site-specific localization to sub cellular organelles hidden beneath cell membranes. Thus far, the cellular entry of these nanoscale systems has been not fully understood. Endocytosisis a form of active transport in which cell transports elected extracellular molecules (such as proteins, viruses, micro-organisms and nanoscale systems) are allowed into cell interiors by engulfing them in an energy-dependent process. This process appears at the plasma membrane surface and contains internalization of the cell membrane as well as the membrane proteins and lipids of cell. There are multiform pathways of endocytosis for nanoscale systems. Further comprehension for the mechanisms of endocytosis is achieved with a combination of efficient genetic manipulations, cell dynamic imaging, and chemical endocytosis inhibitors. This review provides an account of various endocytic pathways, itemizes current methods to study endocytosis of nanoscale systems, discusses some factors associated with cellular uptake for nanoscale systems and introduces the trafficking behavior for nanoscale systems with active targeting. An insight into the endocytosis mechanism is urgent and significant for developing safe and efficient nanoscale systems for cancer diagnosis and therapy. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

Advances and directions of ion nitriding/carburizing

NASA Technical Reports Server (NTRS)

Spalvins, Talivaldis

1989-01-01

Ion nitriding and carburizing are plasma activated thermodynamic processes for the production of case hardened surface layers not only for ferrous materials, but also for an increasing number of nonferrous metals. When the treatment variables are properly controlled, the use of nitrogenous or carbonaceous glow discharge medium offers great flexibility in tailoring surface/near-surface properties independently of the bulk properties. The ion nitriding process has reached a high level of maturity and has gained wide industrial acceptance, while the more recently introduced ion carburizing process is rapidly gaining industrial acceptance. The current status of plasma mass transfer mechanisms into the surface regarding the formation of compound and diffusion layers in ion nitriding and carbon build-up ion carburizing is reviewed. In addition, the recent developments in design and construction of advanced equipment for obtaining optimized and controlled case/core properties is summarized. Also, new developments and trends such as duplex plasma treatments and alternatives to dc diode nitriding are highlighted.

Dissolution of bulk specimens of silicon nitride

NASA Technical Reports Server (NTRS)

Davis, W. F.; Merkle, E. J.

1981-01-01

An accurate chemical characterization of silicon nitride has become important in connection with current efforts to incorporate components of this material into advanced heat engines. However, there are problems concerning a chemical analysis of bulk silicon nitride. Current analytical methods require the pulverization of bulk specimens. A pulverization procedure making use of grinding media, on the other hand, will introduce contaminants. A description is given of a dissolution procedure which overcomes these difficulties. It has been found that up to at least 0.6 g solid pieces of various samples of hot pressed and reaction bonded silicon nitride can be decomposed in a mixture of 3 mL hydrofluoric acid and 1 mL nitric acid overnight at 150 C in a Parr bomb. High-purity silicon nitride is completely soluble in nitric acid after treatment in the bomb. Following decomposition, silicon and hydrofluoric acid are volatilized and insoluble fluorides are converted to a soluble form.

Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Si, M. S.; Gao, Daqiang, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn; Yang, Dezheng

2014-05-28

Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstratemore » such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.« less

Center for Nanoscale Science and Technology

National Institute of Standards and Technology Data Gateway

NIST Center for Nanoscale Science and Technology (Program website, free access)   Currently there is no database matching your keyword search, but the NIST Center for Nanoscale Science and Technology website may be of interest. The Center for Nanoscale Science and Technology enables science and industry by providing essential measurement methods, instrumentation, and standards to support all phases of nanotechnology development, from discovery to production.

Group-III Nitride Field Emitters

NASA Technical Reports Server (NTRS)

Bensaoula, Abdelhak; Berishev, Igor

2008-01-01

Field-emission devices (cold cathodes) having low electron affinities can be fabricated through lattice-mismatched epitaxial growth of nitrides of elements from group III of the periodic table. Field emission of electrons from solid surfaces is typically utilized in vacuum microelectronic devices, including some display devices. The present field-emission devices and the method of fabricating them were developed to satisfy needs to reduce the cost of fabricating field emitters, make them compatible with established techniques for deposition of and on silicon, and enable monolithic integration of field emitters with silicon-based driving circuitry. In fabricating a device of this type, one deposits a nitride of one or more group-III elements on a substrate of (111) silicon or other suitable material. One example of a suitable deposition process is chemical vapor deposition in a reactor that contains plasma generated by use of electron cyclotron resonance. Under properly chosen growth conditions, the large mismatch between the crystal lattices of the substrate and the nitride causes strains to accumulate in the growing nitride film, such that the associated stresses cause the film to crack. The cracks lie in planes parallel to the direction of growth, so that the growing nitride film becomes divided into microscopic growing single-crystal columns. The outer ends of the fully-grown columns can serve as field-emission tips. By virtue of their chemical compositions and crystalline structures, the columns have low work functions and high electrical conductivities, both of which are desirable for field emission of electrons. From examination of transmission electron micrographs of a prototype device, the average column width was determined to be about 100 nm and the sharpness of the tips was determined to be characterized by a dimension somewhat less than 100 nm. The areal density of the columns was found to about 5 x 10(exp 9)/sq cm . about 4 to 5 orders of magnitude

Method to produce catalytically active nanocomposite coatings

DOEpatents

Erdemir, Ali; Eryilmaz, Osman Levent; Urgen, Mustafa; Kazmanli, Kursat

2016-02-09

A nanocomposite coating and method of making and using the coating. The nanocomposite coating is disposed on a base material, such as a metal or ceramic; and the nanocomposite consists essentially of a matrix of an alloy selected from the group of Cu, Ni, Pd, Pt and Re which are catalytically active for cracking of carbon bonds in oils and greases and a grain structure selected from the group of borides, carbides and nitrides.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Erdemir, Ali; Eryilmaz, Osman Levent; Urgen, Mustafa

A nanocomposite coating and method of making and using the coating. The nanocomposite coating is disposed on a base material, such as a metal or ceramic; and the nanocomposite consists essentially of a matrix of an alloy selected from the group of Cu, Ni, Pd, Pt and Re which are catalytically active for cracking of carbon bonds in oils and greases and a grain structure selected from the group of borides, carbides and nitrides.

Erbium doped aluminum nitride nanoparticles for nano-thermometer applications

NASA Astrophysics Data System (ADS)

Pandya, Sneha G.; Kordesch, Martin E.

2015-06-01

We have synthesized nanoparticles (NPs) of aluminum nitride (AlN) doped in situ with erbium (Er) using the inert gas condensation technique. These NPs have optical properties that make them good candidates for nanoscale temperature sensors. The photoluminescence (PL) spectrum of Er3+ in these NPs shows two emission peaks in the green region at around 540 and 560 nm. The ratio of the intensities of these luminescence peaks is related to temperature. Using Boltzmann’s distribution, the temperature of the NP and its surrounding can be calculated. The NPs were directly deposited on (111) p-type silicon wafers, transmission electron microscope grids and glass cover slips. XRD and HRTEM study indicates that most of the NPs have crystalline hexagonal AlN structure. An enhancement of the luminescence from these NPs was observed after heating in-air at 770 K for 3 h. The sample was then heated in air using a scanning optical microscope laser. The corresponding change in PL peak intensities of the NPs was recorded for laser powers ranging from 0.2 to 15.1 mW. Temperature calculated using the Boltzmann’s distribution was in the range of 300-470 K. This temperature range is of interest for semiconductor device heating and for thermal treatment of cancerous cells, for example.

Structure and properties of nitrided surface layer produced on NiTi shape memory alloy by low temperature plasma nitriding

NASA Astrophysics Data System (ADS)

Czarnowska, Elżbieta; Borowski, Tomasz; Sowińska, Agnieszka; Lelątko, Józef; Oleksiak, Justyna; Kamiński, Janusz; Tarnowski, Michał; Wierzchoń, Tadeusz

2015-04-01

NiTi shape memory alloys are used for bone and cardiological implants. However, on account of the metallosis effect, i.e. the release of the alloy elements into surrounding tissues, they are subjected to various surface treatment processes in order to improve their corrosion resistance and biocompatibility without influencing the required shape memory properties. In this paper, the microstructure, topography and morphology of TiN surface layer on NiTi alloy, and corrosion resistance, both before and after nitriding in low-temperature plasma at 290 °C, are presented. Examinations with the use of the potentiodynamic and electrochemical impedance spectroscopy methods were carried out and show an increase of corrosion resistance in Ringer's solution after glow-discharge nitriding. This surface titanium nitride layer also improved the adhesion of platelets and the proliferation of osteoblasts, which was investigated in in vitro experiments with human cells. Experimental data revealed that nitriding NiTi shape memory alloy under low-temperature plasma improves its properties for bone implant applications.

Excellent electrical conductivity of the exfoliated and fluorinated hexagonal boron nitride nanosheets.

PubMed

Xue, Yafang; Liu, Qian; He, Guanjie; Xu, Kaibing; Jiang, Lin; Hu, Xianghua; Hu, Junqing

2013-01-24

The insulator characteristic of hexagonal boron nitride limits its applications in microelectronics. In this paper, the fluorinated hexagonal boron nitride nanosheets were prepared by doping fluorine into the boron nitride nanosheets exfoliated from the bulk boron nitride in isopropanol via a facile chemical solution method with fluoboric acid; interestingly, these boron nitride nanosheets demonstrate a typical semiconductor characteristic which were studied on a new scanning tunneling microscope-transmission electron microscope holder. Since this property changes from an insulator to a semiconductor of the boron nitride, these nanosheets will be able to extend their applications in designing and fabricating electronic nanodevices.

Structure and energetics of carbon, hexagonal boron nitride, and carbon/hexagonal boron nitride single-layer and bilayer nanoscrolls

NASA Astrophysics Data System (ADS)

Siahlo, Andrei I.; Poklonski, Nikolai A.; Lebedev, Alexander V.; Lebedeva, Irina V.; Popov, Andrey M.; Vyrko, Sergey A.; Knizhnik, Andrey A.; Lozovik, Yurii E.

2018-03-01

Single-layer and bilayer carbon and hexagonal boron nitride nanoscrolls as well as nanoscrolls made of bilayer graphene/hexagonal boron nitride heterostructure are considered. Structures of stable states of the corresponding nanoscrolls prepared by rolling single-layer and bilayer rectangular nanoribbons are obtained based on the analytical model and numerical calculations. The lengths of nanoribbons for which stable and energetically favorable nanoscrolls are possible are determined. Barriers to rolling of single-layer and bilayer nanoribbons into nanoscrolls and barriers to nanoscroll unrolling are calculated. Based on the calculated barriers nanoscroll lifetimes in the stable state are estimated. Elastic constants for bending of graphene and hexagonal boron nitride layers used in the model are found by density functional theory calculations.

NASA research on refractory compounds.

NASA Technical Reports Server (NTRS)

Gangler, J. J.

1971-01-01

The behavior and properties of the refractory carbides, nitrides, and borides are being investigated by NASA as part of its research aimed at developing superior heat resistant materials for aerospace applications. Studies of the zirconium-carbon-oxygen system show that zirconium oxycarbides of different compositions and lattice parameters can be formed between 1500 C and 1900 C and are stable below 1500 C. More applied studies show that hot working generally improves the microstructure and therefore the strength of TiC and NbC. Sintering studies on UN indicate that very high densities can be achieved. Hot pressing of cermets of HfN and HfC produces good mechanical properties for high temperature bearing applications. Attempts to improve the impact resistance of boride composites by the addition of a nickel or carbon yarn were not overly successful.

Monolithic Gyroidal Mesoporous Mixed Titanium–Niobium Nitrides

PubMed Central

2015-01-01

Mesoporous transition metal nitrides are interesting materials for energy conversion and storage applications due to their conductivity and durability. We present ordered mixed titanium–niobium (8:2, 1:1) nitrides with gyroidal network structures synthesized from triblock terpolymer structure-directed mixed oxides. The materials retain both macroscopic integrity and mesoscale ordering despite heat treatment up to 600 °C, without a rigid carbon framework as a support. Furthermore, the gyroidal lattice parameters were varied by changing polymer molar mass. This synthesis strategy may prove useful in generating a variety of monolithic ordered mesoporous mixed oxides and nitrides for electrode and catalyst materials. PMID:25122534

Vertical III-nitride thin-film power diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wierer, Jr., Jonathan; Fischer, Arthur J.; Allerman, Andrew A.

2017-03-14

A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.

Photoinduced doping in heterostructures of graphene and boron nitride.

PubMed

Ju, L; Velasco, J; Huang, E; Kahn, S; Nosiglia, C; Tsai, Hsin-Zon; Yang, W; Taniguchi, T; Watanabe, K; Zhang, Y; Zhang, G; Crommie, M; Zettl, A; Wang, F

2014-05-01

The design of stacks of layered materials in which adjacent layers interact by van der Waals forces has enabled the combination of various two-dimensional crystals with different electrical, optical and mechanical properties as well as the emergence of novel physical phenomena and device functionality. Here, we report photoinduced doping in van der Waals heterostructures consisting of graphene and boron nitride layers. It enables flexible and repeatable writing and erasing of charge doping in graphene with visible light. We demonstrate that this photoinduced doping maintains the high carrier mobility of the graphene/boron nitride heterostructure, thus resembling the modulation doping technique used in semiconductor heterojunctions, and can be used to generate spatially varying doping profiles such as p-n junctions. We show that this photoinduced doping arises from microscopically coupled optical and electrical responses of graphene/boron nitride heterostructures, including optical excitation of defect transitions in boron nitride, electrical transport in graphene, and charge transfer between boron nitride and graphene.

Investigation of Nitride Morphology After Self-Aligned Contact Etch

NASA Technical Reports Server (NTRS)

Hwang, Helen H.; Keil, J.; Helmer, B. A.; Chien, T.; Gopaladasu, P.; Kim, J.; Shon, J.; Biegel, Bryan (Technical Monitor)

2001-01-01

Self-Aligned Contact (SAC) etch has emerged as a key enabling technology for the fabrication of very large-scale memory devices. However, this is also a very challenging technology to implement from an etch viewpoint. The issues that arise range from poor oxide etch selectivity to nitride to problems with post etch nitride surface morphology. Unfortunately, the mechanisms that drive nitride loss and surface behavior remain poorly understood. Using a simple langmuir site balance model, SAC nitride etch simulations have been performed and compared to actual etched results. This approach permits the study of various etch mechanisms that may play a role in determining nitride loss and surface morphology. Particle trajectories and fluxes are computed using Monte-Carlo techniques and initial data obtained from double Langmuir probe measurements. Etched surface advancement is implemented using a shock tracking algorithm. Sticking coefficients and etch yields are adjusted to obtain the best agreement between actual etched results and simulated profiles.

Interface formation in monolayer graphene-boron nitride heterostructures.

PubMed

Sutter, P; Cortes, R; Lahiri, J; Sutter, E

2012-09-12

The ability to control the formation of interfaces between different materials has become one of the foundations of modern materials science. With the advent of two-dimensional (2D) crystals, low-dimensional equivalents of conventional interfaces can be envisioned: line boundaries separating different materials integrated in a single 2D sheet. Graphene and hexagonal boron nitride offer an attractive system from which to build such 2D heterostructures. They are isostructural, nearly lattice-matched, and isoelectronic, yet their different band structures promise interesting functional properties arising from their integration. Here, we use a combination of in situ microscopy techniques to study the growth and interface formation of monolayer graphene-boron nitride heterostructures on ruthenium. In a sequential chemical vapor deposition process, boron nitride grows preferentially at the edges of existing monolayer graphene domains, which can be exploited for synthesizing continuous 2D membranes of graphene embedded in boron nitride. High-temperature growth leads to intermixing near the interface, similar to interfacial alloying in conventional heterostructures. Using real-time microscopy, we identify processes that eliminate this intermixing and thus pave the way to graphene-boron nitride heterostructures with atomically sharp interfaces.

Tubes of rhombohedral boron nitride

NASA Astrophysics Data System (ADS)

Bourgeois, L.; Bando, Y.; Sato, T.

2000-08-01

The structure of boron nitride bamboo-like tubular whiskers grown from boron nitride powder is investigated by high-resolution transmission electron microscopy. Despite the relatively small size of the tubes (20-200 nm in diameter), they all exhibit rhombohedral-like ordering in their layer stacking. The tubular sheets also tend to have their [10 bar 1 0] direction parallel to the fibre axis. Particles of iron alloys are commonly found encapsulated inside or at the end of the filaments. It is suggested that iron plays an active role in the growth of the fibres.

Magnetoresistance measurements of superconducting molybdenum nitride thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baskaran, R., E-mail: baskaran@igcar.gov.in; Arasu, A. V. Thanikai; Amaladass, E. P.

2016-05-23

Molybdenum nitride thin films have been deposited on aluminum nitride buffered glass substrates by reactive DC sputtering. GIXRD measurements indicate formation of nano-crystalline molybdenum nitride thin films. The transition temperature of MoN thin film is 7.52 K. The transition width is less than 0.1 K. The upper critical field Bc{sub 2}(0), calculated using GLAG theory is 12.52 T. The transition width for 400 µA current increased initially upto 3 T and then decreased, while that for 100 µA current transition width did not decrease.

Nanoscale potentiometry.

PubMed

Bakker, Eric; Pretsch, Ernö

2008-01-01

Potentiometric sensors share unique characteristics that set them apart from other electrochemical sensors. Potentiometric nanoelectrodes have been reported and successfully used for many decades, and we review these developments. Current research chiefly focuses on nanoscale films at the outer or the inner side of the membrane, with outer layers for increasing biocompatibility, expanding the sensor response, or improving the limit of detection (LOD). Inner layers are mainly used for stabilizing the response and eliminating inner aqueous contacts or undesired nanoscale layers of water. We also discuss the ultimate detectability of ions with such sensors and the power of coupling the ultra-low LODs of ion-selective electrodes with nanoparticle labels to give attractive bioassays that can compete with state-of-the-art electrochemical detection.

Hard and low friction nitride coatings and methods for forming the same

DOEpatents

Erdemir, Ali; Urgen, Mustafa; Cakir, Ali Fuat; Eryilmaz, Osman Levent; Kazmanli, Kursat; Keles, Ozgul

2007-05-01

An improved coating material possessing super-hard and low friction properties and a method for forming the same. The improved coating material includes the use of a noble metal or soft metal homogeneously distributed within a hard nitride material. The addition of small amounts of such metals into nitrides such as molybdenum nitride, titanium nitride, and chromium nitride results in as much as increasing of the hardness of the material as well as decreasing the friction coefficient and increasing the oxidation resistance.

Plasmonic spectral tunability of conductive ternary nitrides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kassavetis, S.; Patsalas, P., E-mail: ppats@physics.auth.gr; Bellas, D. V.

2016-06-27

Conductive binary transition metal nitrides, such as TiN and ZrN, have emerged as a category of promising alternative plasmonic materials. In this work, we show that ternary transition metal nitrides such as Ti{sub x}Ta{sub 1−x}N, Ti{sub x}Zr{sub 1−x}N, Ti{sub x}Al{sub 1−x}N, and Zr{sub x}Ta{sub 1−x}N share the important plasmonic features with their binary counterparts, while having the additional asset of the exceptional spectral tunability in the entire visible (400–700 nm) and UVA (315–400 nm) spectral ranges depending on their net valence electrons. In particular, we demonstrate that such ternary nitrides can exhibit maximum field enhancement factors comparable with gold in the aforementionedmore » broadband range. We also critically evaluate the structural features that affect the quality factor of the plasmon resonance and we provide rules of thumb for the selection and growth of materials for nitride plasmonics.« less

Nitridation of porous GaAs by an ECR ammonia plasma

NASA Astrophysics Data System (ADS)

Naddaf, M.; Hullavarad, S. S.; Ganesan, V.; Bhoraskar, S. V.

2006-02-01

The effect of surface porosity of GaAs on the nature of growth of GaN, by use of plasma nitridation of GaAs, has been investigated. Porous GaAs samples were prepared by anodic etching of n-type (110) GaAs wafers in HCl solution. Nitridation of porous GaAs samples were carried out by using an electron-cyclotron resonance-induced ammonia plasma. The formation of mixed phases of GaN was investigated using the grazing angle x-ray diffraction method. A remarkable improvement in the intensity of photoluminescence (PL) compared with that of GaN synthesized by direct nitriding of GaAs surface has been observed. The PL intensity of nitrided porous GaAs at the temperature of 380 °C was found to be about two orders of magnitude higher as compared with the directly nitrided GaAs at the temperature of 500 °C. The changes in the morphology of nitrided porous GaAs have been investigated using both scanning electron microscopy and atomic force microscopy.

Infrared bolometers with silicon nitride micromesh absorbers

NASA Technical Reports Server (NTRS)

Bock, J. J.; Turner, A. D.; DelCastillo, H. M.; Beeman, J. W.; Lange, A. E.; Mauskopf, P. D.

1996-01-01

Sensitive far infrared and millimeter wave bolometers fabricated from a freestanding membrane of low stress silicon nitride are reported. The absorber, consisting of a metallized silicon nitride micromesh thermally isolated by radial legs of silicon nitride, is placed in an integrating cavity to efficiently couple to single mode or multiple mode infrared radiation. This structure provides low heat capacity, low thermal conduction and minimal cross section to energetic particles. A neutron transmutation doped Ge thermister is bump bonded to the center of the device and read out with evaporated Cr-Au leads. The limiting performance of the micromesh absorber is discussed and the recent results obtained from a 300 mK cold stage are summarized.

Silicon surface passivation by silicon nitride deposition

NASA Technical Reports Server (NTRS)

Olsen, L. C.

1984-01-01

Silicon nitride deposition was studied as a method of passivation for silicon solar cell surfaces. The following three objectives were the thrust of the research: (1) the use of pecvd silicon nitride for passivation of silicon surfaces; (2) measurement techniques for surface recombination velocity; and (3) the importance of surface passivation to high efficiency solar cells.

Silicon nitride ceramic having high fatigue life and high toughness

DOEpatents

Yeckley, Russell L.

1996-01-01

A sintered silicon nitride ceramic comprising between about 0.6 mol % and about 3.2 mol % rare earth as rare earth oxide, and between about 85 w/o and about 95 w/o beta silicon nitride grains, wherein at least about 20% of the beta silicon nitride grains have a thickness of greater than about 1 micron.

Surface Area, and Oxidation Effects on Nitridation Kinetics of Silicon Powder Compacts

NASA Technical Reports Server (NTRS)

Bhatt, R. T.; Palczer, A. R.

1998-01-01

Commercially available silicon powders were wet-attrition-milled from 2 to 48 hr to achieve surface areas (SA's) ranging from 1.3 to 70 sq m/g. The surface area effects on the nitridation kinetics of silicon powder compacts were determined at 1250 or 1350 C for 4 hr. In addition, the influence of nitridation environment, and preoxidation on nitridation kinetics of a silicon powder of high surface area (approximately equals 63 sq m/g) was investigated. As the surface area increased, so did the percentage nitridation after 4 hr in N2 at 1250 or 1350 C. Silicon powders of high surface area (greater than 40 sq m/g) can be nitrided to greater than 70% at 1250 C in 4 hr. The nitridation kinetics of the high-surface-area powder compacts were significantly delayed by preoxidation treatment. Conversely, the nitridation environment had no significant influence on the nitridation kinetics of the same powder. Impurities present in the starting powder, and those accumulated during attrition milling, appeared to react with the silica layer on the surface of silicon particles to form a molten silicate layer, which provided a path for rapid diffusion of nitrogen and enhanced the nitridation kinetics of high surface area silicon powder.

Method for producing silicon nitride/silicon carbide composite

DOEpatents

Dunmead, Stephen D.; Weimer, Alan W.; Carroll, Daniel F.; Eisman, Glenn A.; Cochran, Gene A.; Susnitzky, David W.; Beaman, Donald R.; Nilsen, Kevin J.

1996-07-23

Silicon carbide/silicon nitride composites are prepared by carbothermal reduction of crystalline silica powder, carbon powder and optionally crsytalline silicon nitride powder. The crystalline silicon carbide portion of the composite has a mean number diameter less than about 700 nanometers and contains nitrogen.

Method for locating metallic nitride inclusions in metallic alloy ingots

DOEpatents

White, Jack C.; Traut, Davis E.; Oden, Laurance L.; Schmitt, Roman A.

1992-01-01

A method of determining the location and history of metallic nitride and/or oxynitride inclusions in metallic melts. The method includes the steps of labeling metallic nitride and/or oxynitride inclusions by making a coreduced metallic-hafnium sponge from a mixture of hafnium chloride and the chloride of a metal, reducing the mixed chlorides with magnesium, nitriding the hafnium-labeled metallic-hafnium sponge, and seeding the sponge to be melted with hafnium-labeled nitride inclusions. The ingots are neutron activated and the hafnium is located by radiometric means. Hafnium possesses exactly the proper metallurgical and radiochemical properties for this use.

Identification of delamination failure of boride layer on common Cr-based steels

NASA Astrophysics Data System (ADS)

Taktak, Sukru; Tasgetiren, Suleyman

2006-10-01

Adhesion is an important aspect in the reliability of coated components. With low-adhesion of interfaces, different crack paths may develop depending on the local stress field at the interface and the fracture toughness of the coating, substrate, and interface. In the current study, an attempt has been made to identify the delamination failure of coated Cr-based steels by boronizing. For this reason, two commonly used steels (AISI H13, AISI 304) are considered. The steels contain 5.3 and 18.3 wt.% Cr, respectively. Boriding treatment is carried out in a slurry salt bath consisting of borax, boric acid, and ferrosilicon at a temperature range of 800 950 °C for 3, 5, and 7 h. The general properties of the boron coating are obtained by mechanical and metallographic characterization tests. For identification of coating layer failure, some fracture toughness tests and the Daimler-Benz Rockwell-C adhesion test are used.

Hot carrier dynamics in plasmonic transition metal nitrides

NASA Astrophysics Data System (ADS)

Habib, Adela; Florio, Fred; Sundararaman, Ravishankar

2018-06-01

Extraction of non-equilibrium hot carriers generated by plasmon decay in metallic nano-structures is an increasingly exciting prospect for utilizing plasmonic losses, but the search for optimum plasmonic materials with long-lived carriers is ongoing. Transition metal nitrides are an exciting class of new plasmonic materials with superior thermal and mechanical properties compared to conventional noble metals, but their suitability for plasmonic hot carrier applications remains unknown. Here, we present fully first principles calculations of the plasmonic response, hot carrier generation and subsequent thermalization of all group IV, V and VI transition metal nitrides, fully accounting for direct and phonon-assisted transitions as well as electron–electron and electron–phonon scattering. We find the largest frequency ranges for plasmonic response in ZrN, HfN and WN, between those of gold and silver, while we predict strongest absorption in the visible spectrum for the VN, NbN and TaN. Hot carrier generation is dominated by direct transitions for most of the relevant energy range in all these nitrides, while phonon-assisted processes dominate only below 1 eV plasmon energies primarily for the group IV nitrides. Finally, we predict the maximum hot carrier lifetimes to be around 10 fs for group IV and VI nitrides, a factor of 3–4 smaller than noble metals, due to strong electron–phonon scattering. However, we find longer carrier lifetimes for group V nitrides, comparable to silver for NbN and TaN, while exceeding 100 fs (twice that of silver) for VN, making them promising candidates for efficient hot carrier extraction.

Titanium-nitride-oxide-coated coronary stents: insights from the available evidence.

PubMed

Karjalainen, Pasi P; Nammas, Wail

2017-06-01

Coating of stent surface with a biocompatible material is suggested to improve stent safety profile. A proprietary process was developed to coat titanium-nitride-oxide on the stent surface, based on plasma technology that uses the nano-synthesis of gas and metal. Preclinical in vitro and in vivo investigation confirmed blood compatibility of titanium (nitride-) oxide films. Titanium-nitride-oxide-coated stents demonstrated a better angiographic outcome, compared with bare-metal stents at mid-term follow-up; however, they failed to achieve non-inferiority for angiographic outcome versus second-generation drug-eluting stents. Observational studies showed adequate clinical outcome at mid-term follow-up. Non-randomized studies showed an outcome of titanium-nitride-oxide-coated stents comparable to - or better than - first-generation drug-eluting stents at long-term follow-up. Two randomized controlled trials demonstrated comparable efficacy outcome, and a better safety outcome of titanium-nitride-oxide-coated stents versus drug-eluting stents at long-term follow-up. Evaluation by optical coherence tomography at mid-term follow-up revealed better neointimal strut coverage associated with titanium-nitride-oxide-coated stents versus drug-eluting stents; yet, neointimal hyperplasia thickness was greater. Key messages Stents coated with titanium-nitride-oxide demonstrated biocompatibility in preclinical studies: they inhibit platelet and fibrin deposition, and reduce neointimal growth. In observational and non-randomized studies, titanium-nitride-oxide-coated stents were associated with adequate safety and efficacy outcome. In randomized trials of patients with acute coronary syndrome, titanium-nitride-oxide-coated stents were associated with a better safety outcome, compared with drug-eluting stents; efficacy outcome was comparable.

Microstructure and antibacterial properties of microwave plasma nitrided layers on biomedical stainless steels

NASA Astrophysics Data System (ADS)

Lin, Li-Hsiang; Chen, Shih-Chung; Wu, Ching-Zong; Hung, Jing-Ming; Ou, Keng-Liang

2011-06-01

Nitriding of AISI 303 austenitic stainless steel using microwave plasma system at various temperatures was conducted in the present study. The nitrided layers were characterized via scanning electron microscopy, glancing angle X-ray diffraction, transmission electron microscopy and Vickers microhardness tester. The antibacterial properties of this nitrided layer were evaluated. During nitriding treatment between 350 °C and 550 °C, the phase transformation sequence on the nitrided layers of the alloys was found to be γ → (γ + γ N) → (γ + α + CrN). The analytical results revealed that the surface hardness of AISI 303 stainless steel could be enhanced with the formation of γ N phase in nitriding process. Antibacterial test also demonstrated the nitrided layer processed the excellent antibacterial properties. The enhanced surface hardness and antibacterial properties make the nitrided AISI 303 austenitic stainless steel to be one of the essential materials in the biomedical applications.

Electronic structure and mechanical properties of plasma nitrided ferrous alloys

NASA Astrophysics Data System (ADS)

Portolan, E.; Baumvol, I. J. R.; Figueroa, C. A.

2009-04-01

The electronic structures of the near-surface regions of two different nitrided steels (AISI 316 and 4140) were investigated using X-ray photoelectron spectroscopy. Photoelectron groups from all main chemical elements involved were addressed for steel samples with implanted-N concentrations in the range 16-32 at.%. As the implanted-N concentrations were increased, rather contrasting behaviors were observed for the two kinds of steel. The N1s photoelectrons had spectral shifts toward lower (nitrided AISI 316) or higher (nitrided AISI 4140) binding energies, whereas the Fe2p 3/2 photoelectron spectrum remains at a constant binding energy (nitrided AISI 316) or shifts toward higher binding energies (AISI 4140). These trends are discussed in terms of the metallic nitride formation and the overlapping of atomic orbitals. For nitrided AISI 316, a semi-classical approach of charge transfer between Cr and N is used to explain the experimental facts (formation of CrN), while for nitrided AISI 4140 we propose that the interaction between orbitals 4s from Fe and 2p from N promotes electrons to the conduction band increasing the electrical attraction of the N1s and Fe2p electrons in core shells (formation of FeN x). The increase in hardness of the steel upon N implantation is attributed to the localization of electrons in specific bonds, which diminishes the metallic bond character.

Oxidation of boron nitride in an arc heated jet.

NASA Technical Reports Server (NTRS)

Buckley, J. D.

1971-01-01

Two grades of hot pressed boron nitride and a boron nitride composite were subjected to oxidation tests in a 2.5 megawatt atmospheric arc jet. The results showed that fabrication and/or composition influenced thermal shock and oxidation resistance. Changes in surface structure and recession due to oxidation suggest correlation with specimen composition. The boron nitride composite reacted with the oxygen in the hot subsonic airstream to produce a glassy coating on the hot face surface.

Rolling-element fatigue life of silicon nitride balls: Preliminary test results

NASA Technical Reports Server (NTRS)

Parker, R. J.; Zaretsky, E. V.

1972-01-01

Hot pressed silicon nitride was evaluated as a rolling element bearing material. The five-ball fatigue tester was used to test 12.7 mm (0.500 in.) diameter balls at a maximum Hertz stress of 800,000 psi at a race temperature of 130 F. The fatigue spalls in the silicon nitride resembled those in typical bearing steels. The ten-percent fatigue life of the silicon nitride balls was approximately one-eighth to one-fifth that of typical bearing steels (52100 and M-50). The load capacity of the silicon nitride was approximately one-third that of typical bearing steels. The load capacity of the silicon nitride was significantly higher than previously tested ceramic materials for rolling element bearings.

Identification of thermodynamically stable ceramic reinforcement materials for iron aluminide matrices

NASA Technical Reports Server (NTRS)

Misra, Ajay K.

1990-01-01

Aluminide-base intermetallic matrix composites are currently being considered as potential high-temperature materials. One of the key factors in the selection of a reinforcement material is its chemical stability in the matrix. In this study, chemical interactions between iron aluminides and several potential reinforcement materials, which include carbides, oxides, borides, and nitrides, are analyzed from thermodynamic considerations. Several chemically compatible reinforcement materials are identified for the iron aluminides with Al concentrations ranging from 40 to 50 at. pct.

Nitriding of super alloys for enhancing physical properties

DOEpatents

Purohit, Ankur

1986-01-01

The invention teaches the improvement of certain super alloys by exposing the alloy to an atmosphere of elemental nitrogen at elevated temperatures in excess of 750.degree. C. but less than 1150.degree. C. for an extended duration, viz., by nitriding the surface of the alloy, to establish barrier nitrides of the order of 25-100 micrometers thickness. These barrier nitrides appear to shield the available oxidizing metallic species of the alloy for up to a sixfold improved resistance against oxidation and also appear to impede egress of surface dislocations for increased fatigue and creep strengths.

NANOSCALE BIOSENSORS IN ECOSYSTEM EXPOSURE RESEARCH

EPA Science Inventory

This powerpoint presentation presented information on nanoscale biosensors in ecosystem exposure research. The outline of the presentation is as follows: nanomaterials environmental exposure research; US agencies involved in nanosensor research; nanoscale LEDs in biosensors; nano...

All-angle negative refraction of highly squeezed plasmon and phonon polaritons in graphene-boron nitride heterostructures.

PubMed

Lin, Xiao; Yang, Yi; Rivera, Nicholas; López, Josué J; Shen, Yichen; Kaminer, Ido; Chen, Hongsheng; Zhang, Baile; Joannopoulos, John D; Soljačić, Marin

2017-06-27

A fundamental building block for nanophotonics is the ability to achieve negative refraction of polaritons, because this could enable the demonstration of many unique nanoscale applications such as deep-subwavelength imaging, superlens, and novel guiding. However, to achieve negative refraction of highly squeezed polaritons, such as plasmon polaritons in graphene and phonon polaritons in boron nitride (BN) with their wavelengths squeezed by a factor over 100, requires the ability to flip the sign of their group velocity at will, which is challenging. Here we reveal that the strong coupling between plasmon and phonon polaritons in graphene-BN heterostructures can be used to flip the sign of the group velocity of the resulting hybrid (plasmon-phonon-polariton) modes. We predict all-angle negative refraction between plasmon and phonon polaritons and, even more surprisingly, between hybrid graphene plasmons and between hybrid phonon polaritons. Graphene-BN heterostructures thus provide a versatile platform for the design of nanometasurfaces and nanoimaging elements.

All-angle negative refraction of highly squeezed plasmon and phonon polaritons in graphene–boron nitride heterostructures

PubMed Central

Lin, Xiao; Yang, Yi; Rivera, Nicholas; López, Josué J.; Shen, Yichen; Kaminer, Ido; Chen, Hongsheng; Zhang, Baile; Joannopoulos, John D.; Soljačić, Marin

2017-01-01

A fundamental building block for nanophotonics is the ability to achieve negative refraction of polaritons, because this could enable the demonstration of many unique nanoscale applications such as deep-subwavelength imaging, superlens, and novel guiding. However, to achieve negative refraction of highly squeezed polaritons, such as plasmon polaritons in graphene and phonon polaritons in boron nitride (BN) with their wavelengths squeezed by a factor over 100, requires the ability to flip the sign of their group velocity at will, which is challenging. Here we reveal that the strong coupling between plasmon and phonon polaritons in graphene–BN heterostructures can be used to flip the sign of the group velocity of the resulting hybrid (plasmon–phonon–polariton) modes. We predict all-angle negative refraction between plasmon and phonon polaritons and, even more surprisingly, between hybrid graphene plasmons and between hybrid phonon polaritons. Graphene–BN heterostructures thus provide a versatile platform for the design of nanometasurfaces and nanoimaging elements. PMID:28611222

RF sputtered silicon and hafnium nitrides as applied to 440C steel

NASA Technical Reports Server (NTRS)

Grill, A.; Aron, P. R.

1984-01-01

Silicon nitride and hafnium nitride coatings were deposited on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. The coatings and the interface between the coating and substrate were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. Oxide was found at all interfaces with an interface width of at least 600 A for the oxidized substrates and at least 300 A for the unoxidized substrates. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C. Coatings of both nitrides deposited at 8 mtorr were found to have increased adhesion to both oxidized and unoxidized 440C over those deposited at 20 mtorr.

Graphitic carbon nitride nanosheet@metal-organic framework core-shell nanoparticles for photo-chemo combination therapy

NASA Astrophysics Data System (ADS)

Chen, Rui; Zhang, Jinfeng; Wang, Yu; Chen, Xianfeng; Zapien, J. Antonio; Lee, Chun-Sing

2015-10-01

Recently, nanoscale metal-organic frameworks (NMOFs) have started to be developed as a promising platform for bioimaging and drug delivery. On the other hand, combination therapies using multiple approaches are demonstrated to achieve much enhanced efficacy. Herein, we report, for the first time, core-shell nanoparticles consisting of a photodynamic therapeutic (PDT) agent and a MOF shell while simultaneously carrying a chemotherapeutic drug for effective combination therapy. In this work, core-shell nanoparticles of zeolitic-imadazolate framework-8 (ZIF-8) as shell embedded with graphitic carbon nitride (g-C3N4) nanosheets as core are fabricated by growing ZIF-8 in the presence of g-C3N4 nanosheets. Doxorubicin hydrochloride (DOX) is then loaded into the ZIF-8 shell of the core-shell nanoparticles. The combination of the chemotherapeutic effects of DOX and the PDT effect of g-C3N4 nanosheets can lead to considerably enhanced efficacy. Furthermore, the red fluorescence of DOX and the blue fluorescence of g-C3N4 nanosheets provide the additional function of dual-color imaging for monitoring the drug release process.Recently, nanoscale metal-organic frameworks (NMOFs) have started to be developed as a promising platform for bioimaging and drug delivery. On the other hand, combination therapies using multiple approaches are demonstrated to achieve much enhanced efficacy. Herein, we report, for the first time, core-shell nanoparticles consisting of a photodynamic therapeutic (PDT) agent and a MOF shell while simultaneously carrying a chemotherapeutic drug for effective combination therapy. In this work, core-shell nanoparticles of zeolitic-imadazolate framework-8 (ZIF-8) as shell embedded with graphitic carbon nitride (g-C3N4) nanosheets as core are fabricated by growing ZIF-8 in the presence of g-C3N4 nanosheets. Doxorubicin hydrochloride (DOX) is then loaded into the ZIF-8 shell of the core-shell nanoparticles. The combination of the chemotherapeutic effects of DOX

Structural stability and electronic properties of an octagonal allotrope of two dimensional boron nitride.

PubMed

Takahashi, Lauren; Takahashi, Keisuke

2017-03-27

An octagonal allotrope of two dimensional boron nitride is explored through first principles calculations. Calculations show that two dimensional octagonal boron nitride can be formed with a binding energy comparable to two dimensional hexagonal boron nitride. In addition, two dimensional octagonal boron nitride is found to have a band gap smaller than two dimensional hexagonal boron nitride, suggesting the possibility of semiconductive attributes. Two dimensional octagonal boron nitride also has the ability to layer through physisorption. Defects present within two dimensional octagonal boron nitride also lead toward the introduction of a magnetic moment through the absence of boron atoms. The presence of defects is also found to render both hexagonal and octagonal boron nitrides reactive against hydrogen, where greater reactivity is seen in the presence of nitrogen. Thus, two dimensional octagonal boron nitride is confirmed with potential to tailor properties and reactivity through lattice shape and purposeful introduction of defects.

Synthesis of Boron Nitride Nanotubes for Engineering Applications

NASA Technical Reports Server (NTRS)

Hurst, Janet; Hull, David; Gorican, Dan

2005-01-01

Boron Nitride nanotubes (BNNT) are of interest to the scientific and technical communities for many of the same reasons that carbon nanotubes (CNT) have attracted large amounts of attention. Both materials have potentially unique and significant properties which may have important structural and electronic applications in the future. However of even more interest than their similarities may be the differences between carbon and boron nanotubes. Whilt boron nitride nanotubes possess a very high modulus similaar to CNT, they are also more chemically and thermally inert. Additionally BNNT possess more uniform electronic properties, having a uniform band gap of approximately 5.5 eV while CNT vary from semi-conductin to conductor behavior. Boron Nitride nanotubes have been synthesized by a variety of methods such as chemical vapor deposition, arc discharge and reactive milling. Consistently producing a reliable product has proven difficult. Progress in synthesis of 1-2 gram sized batches of Boron Nitride nanotubes will be discussed as well as potential uses for this unique material.

Alkaline fuel cell with nitride membrane

NASA Astrophysics Data System (ADS)

Sun, Shen-Huei; Pilaski, Moritz; Wartmann, Jens; Letzkus, Florian; Funke, Benedikt; Dura, Georg; Heinzel, Angelika

2017-06-01

The aim of this work is to fabricate patterned nitride membranes with Si-MEMS-technology as a platform to build up new membrane-electrode-assemblies (MEA) for alkaline fuel cell applications. Two 6-inch wafer processes based on chemical vapor deposition (CVD) were developed for the fabrication of separated nitride membranes with a nitride thickness up to 1 μm. The mechanical stability of the perforated nitride membrane has been adjusted in both processes either by embedding of subsequent ion implantation step or by optimizing the deposition process parameters. A nearly 100% yield of separated membranes of each deposition process was achieved with layer thickness from 150 nm to 1 μm and micro-channel pattern width of 1μm at a pitch of 3 μm. The process for membrane coating with electrolyte materials could be verified to build up MEA. Uniform membrane coating with channel filling was achieved after the optimization of speed controlled dip-coating method and the selection of dimethylsulfoxide (DMSO) as electrolyte solvent. Finally, silver as conductive material was defined for printing a conductive layer onto the MEA by Ink-Technology. With the established IR-thermography setup, characterizations of MEAs in terms of catalytic conversion were performed successfully. The results of this work show promise for build up a platform on wafer-level for high throughput experiments.

Interlayer interaction and mechanical properties in multi-layer graphene, Boron-Nitride, Aluminum-Nitride and Gallium-Nitride graphene-like structure: A quantum-mechanical DFT study

NASA Astrophysics Data System (ADS)

Ghorbanzadeh Ahangari, Morteza; Fereidoon, A.; Hamed Mashhadzadeh, Amin

2017-12-01

In present study, we investigated mechanical, electronic and interlayer properties of mono, bi and 3layer of Boron-Nitride (B-N), Aluminum-Nitride (Al-N) and Gallium-Nitride (Ga-N) graphene sheets and compared these results with results obtained from carbonic graphenes (C-graphenes). For reaching this purpose, first we optimized the geometrical parameters of these graphenes by using density functional theory (DFT) method. Then we calculated Young's modulus of graphene sheet by compressing and then elongating these sheets in small increment. Our results indicates that Young's modulus of graphenes didn't changed obviously by increasing the number of layer sheet. We also found that carbonic graphene has greatest Young's modulus among another mentioned sheets because of smallest equilibrium distance between its elements. Next we modeled the van der Waals interfacial interaction exist between two sheets with classical spring model by using general form of Lennard-Jones (L-J) potential for all of mentioned graphenes. For calculating L-J parameters (ε and σ), the potential energy between layers of mentioned graphene as a function of the separation distance was plotted. Moreover, the density of states (DOS) are calculated to understand the electronic properties of these systems better.

Iron-Nitride Alloy Magnets: Transformation Enabled Nitride Magnets Absent Rare Earths (TEN Mare)

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2012-01-01

REACT Project: Case Western is developing a highly magnetic iron-nitride alloy to use in the magnets that power electric motors found in EVs and renewable power generators. This would reduce the overall price of the motor by eliminating the expensive imported rare earth minerals typically found in today’s best commercial magnets. The iron-nitride powder is sourced from abundant and inexpensive materials found in the U.S. The ultimate goal of this project is to demonstrate this new magnet system, which contains no rare earths, in a prototype electric motor. This could significantly reduce the amount of greenhouse gases emitted in themore » U.S. each year by encouraging the use of clean alternatives to oil and coal.« less

Gallium nitride based logpile photonic crystals.

PubMed

Subramania, Ganapathi; Li, Qiming; Lee, Yun-Ju; Figiel, Jeffrey J; Wang, George T; Fischer, Arthur J

2011-11-09

We demonstrate a nine-layer logpile three-dimensional photonic crystal (3DPC) composed of single crystalline gallium nitride (GaN) nanorods, ∼100 nm in size with lattice constants of 260, 280, and 300 nm with photonic band gap in the visible region. This unique GaN structure is created through a combined approach of a layer-by-layer template fabrication technique and selective metal organic chemical vapor deposition (MOCVD). These GaN 3DPC exhibit a stacking direction band gap characterized by strong optical reflectance between 380 and 500 nm. By introducing a "line-defect" cavity in the fifth (middle) layer of the 3DPC, a localized transmission mode with a quality factor of 25-30 is also observed within the photonic band gap. The realization of a group III nitride 3DPC with uniform features and a band gap at wavelengths in the visible region is an important step toward realizing complete control of the electromagnetic environment for group III nitride based optoelectronic devices.

Silicon nitride protective coatings for silvered glass mirrors

DOEpatents

Tracy, C. Edwin; Benson, David K.

1988-01-01

A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate before metal deposition to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

Silicon nitride protective coatings for silvered glass mirrors

DOEpatents

Tracy, C.E.; Benson, D.K.

1984-07-20

A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate prior to metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

Isolation and characterization of a uranium(VI)-nitride triple bond

NASA Astrophysics Data System (ADS)

King, David M.; Tuna, Floriana; McInnes, Eric J. L.; McMaster, Jonathan; Lewis, William; Blake, Alexander J.; Liddle, Stephen T.

2013-06-01

The nature and extent of covalency in uranium bonding is still unclear compared with that of transition metals, and there is great interest in studying uranium-ligand multiple bonds. Although U=O and U=NR double bonds (where R is an alkyl group) are well-known analogues to transition-metal oxo and imido complexes, the uranium(VI)-nitride triple bond has long remained a synthetic target in actinide chemistry. Here, we report the preparation of a uranium(VI)-nitride triple bond. We highlight the importance of (1) ancillary ligand design, (2) employing mild redox reactions instead of harsh photochemical methods that decompose transiently formed uranium(VI) nitrides, (3) an electrostatically stabilizing sodium ion during nitride installation, (4) selecting the right sodium sequestering reagent, (5) inner versus outer sphere oxidation and (6) stability with respect to the uranium oxidation state. Computational analyses suggest covalent contributions to U≡N triple bonds that are surprisingly comparable to those of their group 6 transition-metal nitride counterparts.

Functional carbon nitride materials — design strategies for electrochemical devices

NASA Astrophysics Data System (ADS)

Kessler, Fabian K.; Zheng, Yun; Schwarz, Dana; Merschjann, Christoph; Schnick, Wolfgang; Wang, Xinchen; Bojdys, Michael J.

2017-06-01

In the past decade, research in the field of artificial photosynthesis has shifted from simple, inorganic semiconductors to more abundant, polymeric materials. For example, polymeric carbon nitrides have emerged as promising materials for metal-free semiconductors and metal-free photocatalysts. Polymeric carbon nitride (melon) and related carbon nitride materials are desirable alternatives to industrially used catalysts because they are easily synthesized from abundant and inexpensive starting materials. Furthermore, these materials are chemically benign because they do not contain heavy metal ions, thereby facilitating handling and disposal. In this Review, we discuss the building blocks of carbon nitride materials and examine how strategies in synthesis, templating and post-processing translate from the molecular level to macroscopic properties, such as optical and electronic bandgap. Applications of carbon nitride materials in bulk heterojunctions, laser-patterned memory devices and energy storage devices indicate that photocatalytic overall water splitting on an industrial scale may be realized in the near future and reveal a new avenue of 'post-silicon electronics'.

The Effect of Polymer Char on Nitridation Kinetics of Silicon

NASA Technical Reports Server (NTRS)

Chan, Rickmond C.; Bhatt, Ramakrishna T.

1994-01-01

Effects of polymer char on nitridation kinetics of attrition milled silicon powder have been investigated from 1200 to 1350 C. Results indicate that at and above 1250 C, the silicon compacts containing 3.5 wt percent polymer char were fully converted to Si3N4 after 24 hr exposure in nitrogen. In contrast, the silicon compacts without polymer char could not be fully converted to Si3N4 at 1350 C under similar exposure conditions. At 1250 and 1350 C, the silicon compacts with polymer char showed faster nitridation kinetics than those without the polymer char. As the polymer char content is increased, the amount of SiC in the nitrided material is also increased. By adding small amounts (approx. 2.5 wt percent) of NiO, the silicon compacts containing polymer char can be completely nitrided at 1200 C. The probable mechanism for the accelerated nitridation of silicon containing polymer char is discussed.

Nitridation of a Super-Ferritic Stainless Steel for PEMFC Bipolar Plate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, H.; Turner, J. A.; Brady, M. P.

2007-01-01

AL29-4C alloy nitrided in pure nitrogen resulted in a nitrogen-modified oxide surface, which is the same as AISI446 nitrided under identical conditions. When the alloy was nitrided 24h at 900 C in N2-4H2, XRD and XPS analysis indicated that the surface layer consisted of a nitride outer layer ({approx}0.20 {micro}m) and an oxide inner layer ({approx} 0.82 {micro}m). According to XPS, the nitride outer layer is composed of CrN and [Cr(N),Fe]2N1-x, with much more Cr2N than Fe2N. Mn is migrated and enriched in the oxide inner layer and combined with chromium oxide.AL29-4C alloy nitrided in N2-4H2 resulted in low ICRmore » and excellent corrosion resistance in simulated PEMFC environments. Current was at ca. -3.0 {micro}A/cm2 in the PEMFC anode environment, and at ca. 0.3 {approx} 0.5 {micro}A/cm2 in the cathode environment. This is considered to be rather stable. After being polarized in a PEMFC environment, the ICR increased slightly compared with the as-nitrided sample, but was still rather low.« less

Electronic Biosensors Based on III-Nitride Semiconductors.

PubMed

Kirste, Ronny; Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

2015-01-01

We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

Nanoscale chemical mapping of laser-solubilized silk

NASA Astrophysics Data System (ADS)

Ryu, Meguya; Kobayashi, Hanae; Balčytis, Armandas; Wang, Xuewen; Vongsvivut, Jitraporn; Li, Jingliang; Urayama, Norio; Mizeikis, Vygantas; Tobin, Mark; Juodkazis, Saulius; Morikawa, Junko

2017-11-01

A water soluble amorphous form of silk was made by ultra-short laser pulse irradiation and detected by nanoscale IR mapping. An optical absorption-induced nanoscale surface expansion was probed to yield the spectral response of silk at IR molecular fingerprinting wavelengths with a high  ˜ 20 nm spatial resolution defined by the tip of the probe. Silk microtomed sections of 1-5 μm in thickness were prepared for nanoscale spectroscopy and a laser was used to induce amorphisation. Comparison of silk absorbance measurements carried out by table-top and synchrotron Fourier transform IR spectroscopy proved that chemical imaging obtained at high spatial resolution and specificity (able to discriminate between amorphous and crystalline silk) is reliably achieved by nanoscale IR. Differences in absorbance and spectral line-shapes of the bands are related to the different sensitivity of the applied methods to real and imaginary parts of permittivity. A nanoscale material characterization by combining synchrotron IR radiation and nano-IR is discussed.

Nanoscale phase change memory materials.

PubMed

Caldwell, Marissa A; Jeyasingh, Rakesh Gnana David; Wong, H-S Philip; Milliron, Delia J

2012-08-07

Phase change memory materials store information through their reversible transitions between crystalline and amorphous states. For typical metal chalcogenide compounds, their phase transition properties directly impact critical memory characteristics and the manipulation of these is a major focus in the field. Here, we discuss recent work that explores the tuning of such properties by scaling the materials to nanoscale dimensions, including fabrication and synthetic strategies used to produce nanoscale phase change memory materials. The trends that emerge are relevant to understanding how such memory technologies will function as they scale to ever smaller dimensions and also suggest new approaches to designing materials for phase change applications. Finally, the challenges and opportunities raised by integrating nanoscale phase change materials into switching devices are discussed.

Manufacture of sintered silicon nitrides

NASA Technical Reports Server (NTRS)

Iwai, T.

1985-01-01

Sintered silicon nitrides are manufactured by sintering Si3N powder containing 2 to 15% in wt of a powder mixture composed of nitride powder of lanthanide or Y 100 parts and AIN powder less than 100 parts at 1500 to 1900 deg. temperature under a pressure of less than 200 Kg/sq. cm. The sintered Si3N has high mechanical strength in high temperature. Thus, Si3N4 93.0, Y 5.0 and AlN 2.0% in weight were wet mixed in acetone in N atom, molded and sintered at 1750 deg. and 1000 Kg/sq. cm. to give a sintered body having high hardness.

Silicon-nitride and metal composite

DOEpatents

Landingham, Richard L.; Huffsmith, Sarah A.

1981-01-01

A composite and a method for bonding the composite. The composite includes a ceramic portion of silicon nitride, a refractory metal portion and a layer of MoSi.sub.2 indirectly bonding the composite together. The method includes contacting the layer of MoSi.sub.2 with a surface of the silicon nitride and with a surface of the metal; heating the layer to a temperature below 1400.degree. C.; and, simultaneously with the heating, compressing the layer such that the contacting is with a pressure of at least 30 MPa. This composite overcomes useful life problems in the fabrication of parts for a helical expander for use in power generation.

Silicon-nitride and metal composite

DOEpatents

Landingham, R.L.; Huffsmith, S.A.

A composite and a method for bonding the composite are described. The composite includes a ceramic portion of silicon nitride, a refractory metal portion and a layer of MoSi/sub 2/ indirectly bonding the composite together. The method includes contacting the layer of MoSi/sub 2/ with a surface of the silicon nitride and with a surface of the metal; heating the layer to a temperature below 1400/sup 0/C; and, simultaneously, compressing the layer such that the contacting is with a pressure of at least 30 MPa. This composite overcomes useful life problems in the fabrication of parts for a helical expander for use in power generation.

Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

NASA Astrophysics Data System (ADS)

Hamann, S.; Börner, K.; Burlacov, I.; Spies, H.-J.; Strämke, M.; Strämke, S.; Röpcke, J.

2015-12-01

A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steel samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH4, C2H2, HCN, and NH3). With the help of OES, the rotational temperature of the screen plasma could be determined.

Nanoscale density variations induced by high energy heavy ions in amorphous silicon nitride and silicon dioxide

NASA Astrophysics Data System (ADS)

Mota-Santiago, P.; Vazquez, H.; Bierschenk, T.; Kremer, F.; Nadzri, A.; Schauries, D.; Djurabekova, F.; Nordlund, K.; Trautmann, C.; Mudie, S.; Ridgway, M. C.; Kluth, P.

2018-04-01

The cylindrical nanoscale density variations resulting from the interaction of 185 MeV and 2.2 GeV Au ions with 1.0 μm thick amorphous SiN x :H and SiO x :H layers are determined using small angle x-ray scattering measurements. The resulting density profiles resembles an under-dense core surrounded by an over-dense shell with a smooth transition between the two regions, consistent with molecular-dynamics simulations. For amorphous SiN x :H, the density variations show a radius of 4.2 nm with a relative density change three times larger than the value determined for amorphous SiO x :H, with a radius of 5.5 nm. Complementary infrared spectroscopy measurements exhibit a damage cross-section comparable to the core dimensions. The morphology of the density variations results from freezing in the local viscous flow arising from the non-uniform temperature profile in the radial direction of the ion path. The concomitant drop in viscosity mediated by the thermal conductivity appears to be the main driving force rather than the presence of a density anomaly.

Nitride coating enhances endothelialization on biomedical NiTi shape memory alloy.

PubMed

Ion, Raluca; Luculescu, Catalin; Cimpean, Anisoara; Marx, Philippe; Gordin, Doina-Margareta; Gloriant, Thierry

2016-05-01

Surface nitriding was demonstrated to be an effective process for improving the biocompatibility of implantable devices. In this study, we investigated the benefits of nitriding the NiTi shape memory alloy for vascular stent applications. Results from cell experiments indicated that, compared to untreated NiTi, a superficial gas nitriding treatment enhanced the adhesion of human umbilical vein endothelial cells (HUVECs), cell spreading and proliferation. This investigation provides data to demonstrate the possibility of improving the rate of endothelialization on NiTi by means of nitride coating. Copyright © 2016 Elsevier B.V. All rights reserved.

Laser pyrolysis fabrication of ferromagnetic gamma'-Fe4N and FeC nanoparticles

NASA Technical Reports Server (NTRS)

Grimes, C. A.; Qian, D.; Dickey, E. C.; Allen, J. L.; Eklund, P. C.

2000-01-01

Using the laser pyrolysis method, single phase gamma'-Fe4N nanoparticles were prepared by a two step method involving preparation of nanoscale iron oxide and a subsequent gas-solid nitridation reaction. Single phase Fe3C and Fe7C3 could be prepared by laser pyrolysis from Fe(CO)5 and 3C2H4 directly. Characterization techniques such as XRD, TEM and vibrating sample magnetometer were used to measure phase structure, particle size and magnetic properties of these nanoscale nitride and carbide particles. c2000 American Journal of Physics.

Alumina-based ceramic composite

DOEpatents

Alexander, Kathleen B.; Tiegs, Terry N.; Becher, Paul F.; Waters, Shirley B.

1996-01-01

An improved ceramic composite comprising oxide ceramic particulates, nonoxide ceramic particulates selected from the group consisting of carbides, borides, nitrides of silicon and transition metals and mixtures thereof, and a ductile binder selected from the group consisting of metallic, intermetallic alloys and mixtures thereof is described. The ceramic composite is made by blending powders of the ceramic particulates and the ductile to form a mixture and consolidating the mixture of under conditions of temperature and pressure sufficient to produce a densified ceramic composite.

Sintering silicon nitride

NASA Technical Reports Server (NTRS)

Bansal, Narottam P. (Inventor); Levine, Stanley R. (Inventor); Sanders, William A. (Inventor)

1993-01-01

Oxides having a composition of (Ba(1-x)Sr(x))O-Al2O3-2SiO2 are used as sintering aids for producing an improved silicon nitride ceramic material. The x must be greater than 0 to insure the formation of the stable monoclinic celsian glass phase.

Modification of Low-Alloy Steel Surface by High-Temperature Gas Nitriding Plus Tempering

NASA Astrophysics Data System (ADS)

Jiao, Dongling; Li, Minsong; Ding, Hongzhen; Qiu, Wanqi; Luo, Chengping

2018-02-01

The low-alloy steel was nitrided in a pure NH3 gas atmosphere at 640 660 °C for 2 h, i.e., high-temperature gas nitriding (HTGN), followed by tempering at 225 °C, which can produce a high property surface coating without brittle compound (white) layer. The steel was also plasma nitriding for comparison. The composition, microstructure and microhardness of the nitrided and tempered specimens were examined, and their tribological behavior investigated. The results showed that the as-gas-nitrided layer consisted of a white layer composed of FeN0.095 phase (nitrided austenite) and a diffusional zone underneath the white layer. After tempering, the white layer was decomposed to a nano-sized (α-Fe + γ'-Fe4N + retained austenite) bainitic microstructure with a high hardness of 1150HV/25 g. Wear test results showed that the wear resistance and wear coefficient yielded by the complex HTGN plus tempering were considerably higher and lower, respectively, than those produced by the conventional plasma nitriding.

Discontinuous Inter-Granular Separations (DIGS) in the Gas Nitride Layer of ISS Race Rings

NASA Technical Reports Server (NTRS)

Figert, John; Dasgupta, Rajib; Martinez, James

2010-01-01

The starboard solar alpha rotary joint (SARJ) race ring on the International space station (ISS) failed due to severe spalling of the outer diameter, 45 degree (outer canted) nitrided surface. Subsequent analysis at NASA-KSC revealed that almost all of the debris generated due to the failure was nitrided 15-5 stainless steel. Subsequent analysis of the nitride control coupons (NCC) at NASA-JSC revealed the presence of discontinuous inter-granular separations (DIGS) in the gas nitride layer. These DIGS were present in the inter-granular networking located in the top 2 mils of the nitride layer. The manufacturer's specification requires the maximum white structure to be 0.0003 inches and intergranular networking below the allowable white structure depth to be cause for rejection; a requirement that the NCCs did not meet. Subsequent testing and analysis revealed that lower DIGS content significantly lowered the probability of nitride spalling in simulated, dry condition runs. One batch of nitride samples with DIGS content similar to the port SARJ (did not fail on orbit) which exhibited almost no nitride spalling after being run on one test rig. Another batch of nitride samples with DIGS content levels similar to the starboard SARJ exhibited significant nitride spalling on the same test rig with the same load under dry conditions. Although DIGS were not the root cause of starboard race ring failure, testing indicates that increased DIGS reduced the robustness of the gas nitride layer under dry operating conditions.

Silicon nitride/silicon carbide composite densified materials prepared using composite powders

DOEpatents

Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

1997-07-01

Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

Failure Mechanisms for III-Nitride HEMT Devices

DTIC Science & Technology

2013-11-19

rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates, J. Cryst. Growth 380, 14-17 (2013). ii) Conference presentations (Invited...1 eFinal Report – AOARD Grant FA-2386-11-1-4107 Failure Mechanisms for III-nitride HEMT devices 19 November 2013 Principal Investigators: Martha...aspects of III-nitride HEMT materials and devices. Energy-filtered imaging of unstressed and stressed Ni/Au-gated AlGaN/GaN HEMTs indicated that

Atomistic Design and Simulations of Nanoscale Machines and Assembly

NASA Technical Reports Server (NTRS)

Goddard, William A., III; Cagin, Tahir; Walch, Stephen P.

2000-01-01

Over the three years of this project, we made significant progress on critical theoretical and computational issues in nanoscale science and technology, particularly in:(1) Fullerenes and nanotubes, (2) Characterization of surfaces of diamond and silicon for NEMS applications, (3) Nanoscale machine and assemblies, (4) Organic nanostructures and dendrimers, (5) Nanoscale confinement and nanotribology, (6) Dynamic response of nanoscale structures nanowires (metals, tubes, fullerenes), (7) Thermal transport in nanostructures.

Investigation of nitrogen transport in active screen plasma nitriding processes - Uphill diffusion effect

NASA Astrophysics Data System (ADS)

Jasinski, J. J.; Fraczek, T.; Kurpaska, L.; Lubas, M.; Sitarz, M.

2018-07-01

The paper presents a structure of a nitrided layer formed with active screen plasma nitriding (ASPN) technique, which is a modification of plasma nitriding. The model investigated material was Fe Armco. The nitriding processes were carried out at 773 K for 6 h and 150 Pa. The main objective of this study was to confirm nitrogen migration effect and its influence on the nitride layer formation in different area of the layer interfaces (ε/ε+γ‧/γ‧). The results of the tests were evaluated using scanning electron microscopy (SEM, SEM/EBSD), transmission electron microscopy - electron energy loss spectroscopy (TEM-EFTEM), secondary ion mass spectroscopy (SIMS) and Wavelength Dispersive X-Ray Spectrometry (WDS). The analysis of the results suggests that the structures of the nitrided layers and nitrides morphology differ for various parameters and are dependent on the surface layer saturation mechanism for each of the temperatures and process parameters. New approaches in diffusion of nitrogen and carbon atoms and optimizing process were also analyzed. Nitrogen and also carbon transport in the sublayer was observed by several effects i.e. uphill diffusion effect which confirmed migration of the atoms in diffusive layer towards top surface (ε/ε+γ‧ interface) and stress change effect in the nitrogen saturation area of the (Fe(C,N)+γ‧) layer. Results showed in the paper might be used both for optimization of ASPN processes, modeling of nitrided layers formation mechanism and for controlling the nitrided layers morphology when nitriding different Fe based materials.

Nitridation of silicon. M.S. Thesis Case Western Reserve Univ.

NASA Technical Reports Server (NTRS)

Shaw, N. J.

1981-01-01

Silicon powders with three levels of impurities, principally Fe, were sintered in He or H2. Non-densifying mechanisms of material transport were dominant in all cases. High purity Si showed coarsening in He while particle growth was suppressed in H2. Lower purity powder coarsened in both He and H2. The same three Si powders and Si /111/ single crystal wafers were nitrided in both N2 and N2/H2 atmospheres. Hydrogen increased the degree of nitridation of all three powders and the alpha/beta ratio of the lower purity powder. Some Si3N4 whiskers and open channels through the surface nitride layer were observed in the presence of Fe, correlating with the nitridation-enhancing effects of Fe. Thermodynamic calculations showed that when SiO2 is present on the Si, addition of H2 to the nitriding atmosphere decreases the amount of SiO2 and increases the partial pressure of Si-containing vapor species, that is, Si and SiO. Large amounts of NH3 and SiH4 were also predicted to form.

Stability and rheology of dispersions of silicon nitride and silicon carbide

NASA Technical Reports Server (NTRS)

Feke, Donald L.

1987-01-01

The relationship between the surface and colloid chemistry of commercial ultra-fine silicon carbide and silicon nitride powders was examined by a variety of standard characterization techniques and by methodologies especially developed for ceramic dispersions. These include electrokinetic measurement, surface titration, and surface spectroscopies. The effects of powder pretreatment and modification strategies, which can be utilized to augment control of processing characteristics, were monitored with these technologies. Both silicon carbide and nitride were found to exhibit silica-like surface chemistries, but silicon nitride powders possess an additional amine surface functionality. Colloidal characteristics of the various nitride powders in aqueous suspension is believed to be highly dependent on the relative amounts of the two types of surface groups, which in turn is determined by the powder synthesis route. The differences in the apparent colloidal characteristics for silicon nitride powders cannot be attributed to the specific absorption of ammonium ions. Development of a model for the prediction of double-layer characteristics of materials with a hybrid site interface facilitated understanding and prediction of the behavior of both surface charge and surface potential for these materials. The utility of the model in application to silicon nitride powders was demonstrated.

EDITORIAL: Nanoscale metrology Nanoscale metrology

NASA Astrophysics Data System (ADS)

Picotto, G. B.; Koenders, L.; Wilkening, G.

2009-08-01

Instrumentation and measurement techniques at the nanoscale play a crucial role not only in extending our knowledge of the properties of matter and processes in nanosciences, but also in addressing new measurement needs in process control and quality assurance in industry. Micro- and nanotechnologies are now facing a growing demand for quantitative measurements to support the reliability, safety and competitiveness of products and services. Quantitative measurements presuppose reliable and stable instruments and measurement procedures as well as suitable calibration artefacts to ensure the quality of measurements and traceability to standards. This special issue of Measurement Science and Technology presents selected contributions from the Nanoscale 2008 seminar held at the Istituto Nazionale di Ricerca Metrologica (INRIM), Torino, in September 2008. This was the 4th Seminar on Nanoscale Calibration Standards and Methods and the 8th Seminar on Quantitative Microscopy (the first being held in 1995). The seminar was jointly organized by the Nanometrology Group within EUROMET (The European Collaboration in Measurement Standards), the German Nanotechnology Competence Centre 'Ultraprecise Surface Figuring' (CC-UPOB), the Physikalisch-Technische Bundesanstalt (PTB) and INRIM. A special event during the seminar was the 'knighting' of Günter Wilkening from PTB, Braunschweig, Germany, as the 1st Knight of Dimensional Nanometrology. Günter Wilkening received the NanoKnight Award for his outstanding work in the field of dimensional nanometrology over the last 20 years. The contributions in this special issue deal with the developments and improvements of instrumentation and measurement methods for scanning force microscopy (SFM), electron and optical microscopy, high-resolution interferometry, calibration of instruments and new standards, new facilities and applications including critical dimension (CD) measurements on small and medium structures and nanoparticle

Nitride surface passivation of GaAs nanowires: impact on surface state density.

PubMed

Alekseev, Prokhor A; Dunaevskiy, Mikhail S; Ulin, Vladimir P; Lvova, Tatiana V; Filatov, Dmitriy O; Nezhdanov, Alexey V; Mashin, Aleksander I; Berkovits, Vladimir L

2015-01-14

Surface nitridation by hydrazine-sulfide solution, which is known to produce surface passivation of GaAs crystals, was applied to GaAs nanowires (NWs). We studied the effect of nitridation on conductivity and microphotoluminescence (μ-PL) of individual GaAs NWs using conductive atomic force microscopy (CAFM) and confocal luminescent microscopy (CLM), respectively. Nitridation is found to produce an essential increase in the NW conductivity and the μ-PL intensity as well evidence of surface passivation. Estimations show that the nitride passivation reduces the surface state density by a factor of 6, which is of the same order as that found for GaAs/AlGaAs nanowires. The effects of the nitride passivation are also stable under atmospheric ambient conditions for six months.

Dynamics of systems on the nanoscale

NASA Astrophysics Data System (ADS)

Korol, Andrei V.; Solov'yov, Andrey V.

2017-12-01

Various aspects of the structure formation and dynamics of animate and inanimate matter on the nanoscale is a highly interdisciplinary field of rapidly emerging research interest by both experimentalists and theorists. The International Conference on Dynamics of Systems on the Nanoscale (DySoN) is the premier forum to present cutting-edge research in this field. It was established in 2010 and the most recent conference was held in Bad Ems, Germany in October of 2016. This Topical Issue presents original research results from some of the participants, who attended this conference. Contribution to the Topical Issue "Dynamics of Systems at the Nanoscale", edited by Andrey Solov'yov and Andrei Korol.

Nitriding of super alloys for enhancing physical properties

DOEpatents

Purohit, A.

1984-06-25

The invention teaches the improvement of certain super alloys by exposing the alloy to an atmosphere of elemental nitrogen at elevated temperatures in excess of 750/sup 0/C but less than 1150/sup 0/C for an extended duration, viz., by nitriding the surface of the alloy, to establish barrier nitrides of the order of 25 to 100 micrometers thickness. These barrier

Lattice matched crystalline substrates for cubic nitride semiconductor growth

DOEpatents

Norman, Andrew G; Ptak, Aaron J; McMahon, William E

2015-02-24

Disclosed embodiments include methods of fabricating a semiconductor layer or device and devices fabricated thereby. The methods include, but are not limited to, providing a substrate having a cubic crystalline surface with a known lattice parameter and growing a cubic crystalline group III-nitride alloy layer on the cubic crystalline substrate by coincident site lattice matched epitaxy. The cubic crystalline group III-nitride alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter of the substrate (a). The group III-nitride alloy may be a cubic crystalline In.sub.xGa.sub.yAl.sub.1-x-yN alloy. The lattice parameter of the In.sub.xGa.sub.yAl.sub.1-x-yN or other group III-nitride alloy may be related to the substrate lattice parameter by (a')= 2(a) or (a')=(a)/ 2. The semiconductor alloy may be prepared to have a selected band gap.

Nitridation of silicon by nitrogen neutral beam

NASA Astrophysics Data System (ADS)

Hara, Yasuhiro; Shimizu, Tomohiro; Shingubara, Shoso

2016-02-01

Silicon nitridation was investigated at room temperature using a nitrogen neutral beam (NB) extracted at acceleration voltages of less than 100 V. X-ray photoelectron spectroscopy (XPS) analysis confirmed the formation of a Si3N4 layer on a Si (1 0 0) substrate when the acceleration voltage was higher than 20 V. The XPS depth profile indicated that nitrogen diffused to a depth of 36 nm for acceleration voltages of 60 V and higher. The thickness of the silicon nitrided layer increased with the acceleration voltages from 20 V to 60 V. Cross-sectional transmission electron microscopy (TEM) analysis indicated a Si3N4 layer thickness of 3.1 nm was obtained at an acceleration voltage of 100 V. Moreover, it was proved that the nitrided silicon layer formed by the nitrogen NB at room temperature was effective as the passivation film in the wet etching process.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

PubMed

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

[Smart drug delivery systems based on nanoscale ZnO].

PubMed

Huang, Xiao; Chen, Chun; Yi, Caixia; Zheng, Xi

2018-04-01

In view of the excellent biocompatibility as well as the low cost, nanoscale ZnO shows great potential for drug delivery application. Moreover, The charming character enable nanoscale ZnO some excellent features (e.g. dissolution in acid, ultrasonic permeability, microwave absorbing, hydrophobic/hydrophilic transition). All of that make nanoscale ZnO reasonable choices for smart drug delivery. In the recent decade, more and more studies have focused on controlling the drug release behavior via smart drug delivery systems based on nanoscale ZnO responsive to some certain stimuli. Herein, we review the recent exciting progress on the pH-responsive, ultrasound-responsive, microwave-responsive and UV-responsive nanoscale ZnO-based drug delivery systems. A brief introduction of the drug controlled release behavior and its effect of the drug delivery systems is presented. The biocompatibility of nanoscale ZnO is also discussed. Moreover, its development prospect is looked forward.

Plasma nitriding monitoring reactor: A model reactor for studying plasma nitriding processes using an active screen

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hamann, S., E-mail: hamann@inp-greifswald.de; Röpcke, J.; Börner, K.

2015-12-15

A laboratory scale plasma nitriding monitoring reactor (PLANIMOR) has been designed to study the basics of active screen plasma nitriding (ASPN) processes. PLANIMOR consists of a tube reactor vessel, made of borosilicate glass, enabling optical emission spectroscopy (OES) and infrared absorption spectroscopy. The linear setup of the electrode system of the reactor has the advantages to apply the diagnostic approaches on each part of the plasma process, separately. Furthermore, possible changes of the electrical field and of the heat generation, as they could appear in down-scaled cylindrical ASPN reactors, are avoided. PLANIMOR has been used for the nitriding of steelmore » samples, achieving similar results as in an industrial scale ASPN reactor. A compact spectrometer using an external cavity quantum cascade laser combined with an optical multi-pass cell has been applied for the detection of molecular reaction products. This allowed the determination of the concentrations of four stable molecular species (CH{sub 4}, C{sub 2}H{sub 2}, HCN, and NH{sub 3}). With the help of OES, the rotational temperature of the screen plasma could be determined.« less

Fatigue life of high-speed ball bearings with silicon nitride balls

NASA Technical Reports Server (NTRS)

Parker, R. J.; Zaretsky, E. V.

1974-01-01

Hot-pressed silicon nitride was evaluated as a rolling-element bearing material. The five-ball fatigue tester was used to test 12.7-mm- diameter silicon nitride balls at maximum Hertz stresses ranging from 4.27 x 10 to the 9th power n/sq m to 6.21 x 10 to the 9th power n/sq m at a race temperature of 328K. The fatigue life of NC-132 hot-pressed silicon nitride was found to be equal to typical bearing steels and much greater than other ceramic or cermet materials at the same stress levels. A digital computer program was used to predict the fatigue life of 120-mm- bore angular-contact ball bearings containing either steel or silicon nitride balls. The analysis indicates that there is no improvement in the lives of bearings of the same geometry operating at DN values from 2 to 4 million where silicon nitride balls are used in place of steel balls.

Facile CO Cleavage by a Multimetallic CsU2 Nitride Complex.

PubMed

Falcone, Marta; Kefalidis, Christos E; Scopelliti, Rosario; Maron, Laurent; Mazzanti, Marinella

2016-09-26

Uranium nitrides are important materials with potential for application as fuels for nuclear power generation, and as highly active catalysts. Molecular nitride compounds could provide important insight into the nature of the uranium-nitride bond, but currently little is known about their reactivity. In this study, we found that a complex containing a nitride bridging two uranium centers and a cesium cation readily cleaved the C≡O bond (one of the strongest bonds in nature) under ambient conditions. The product formed has a [CsU2 (μ-CN)(μ-O)] core, thus indicating that the three cations cooperate to cleave CO. Moreover, the addition of MeOTf to the nitride complex led to an exceptional valence disproportionation of the CsU(IV) -N-U(IV) core to yield CsU(III) (OTf) and [MeN=U(V) ] fragments. The important role of multimetallic cooperativity in both reactions is illustrated by the computed reaction mechanisms. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nitride-Based Materials for Flexible MEMS Tactile and Flow Sensors in Robotics

PubMed Central

Abels, Claudio; Mastronardi, Vincenzo Mariano; Guido, Francesco; Dattoma, Tommaso; Qualtieri, Antonio; Megill, William M.; De Vittorio, Massimo; Rizzi, Francesco

2017-01-01

The response to different force load ranges and actuation at low energies is of considerable interest for applications of compliant and flexible devices undergoing large deformations. We present a review of technological platforms based on nitride materials (aluminum nitride and silicon nitride) for the microfabrication of a class of flexible micro-electro-mechanical systems. The approach exploits the material stress differences among the constituent layers of nitride-based (AlN/Mo, SixNy/Si and AlN/polyimide) mechanical elements in order to create microstructures, such as upwardly-bent cantilever beams and bowed circular membranes. Piezoresistive properties of nichrome strain gauges and direct piezoelectric properties of aluminum nitride can be exploited for mechanical strain/stress detection. Applications in flow and tactile sensing for robotics are described. PMID:28489040

EDITORIAL: Nanoscale metrology Nanoscale metrology

NASA Astrophysics Data System (ADS)

Klapetek, P.; Koenders, L.

2011-09-01

This special issue of Measurement Science and Technology presents selected contributions from the NanoScale 2010 seminar held in Brno, Czech Republic. It was the 5th Seminar on Nanoscale Calibration Standards and Methods and the 9th Seminar on Quantitative Microscopy (the first being held in 1995). The seminar was jointly organized with the Czech Metrology Institute (CMI) and the Nanometrology Group of the Technical Committee-Length of EURAMET. There were two workshops that were integrated into NanoScale 2010: first a workshop presenting the results obtained in NANOTRACE, a European Metrology Research Project (EMRP) on displacement-measuring optical interferometers, and second a workshop about the European metrology landscape in nanometrology related to thin films, scanning probe microscopy and critical dimension. The aim of this workshop was to bring together developers, applicants and metrologists working in this field of nanometrology and to discuss future needs. For more information see www.co-nanomet.eu. The articles in this special issue of Measurement Science and Technology cover some novel scientific results. This issue can serve also as a representative selection of topics that are currently being investigated in the field of European and world-wide nanometrology. Besides traditional topics of dimensional metrology, like development of novel interferometers or laser stabilization techniques, some novel interesting trends in the field of nanometrology are observed. As metrology generally reflects the needs of scientific and industrial research, many research topics addressed refer to current trends in nanotechnology, too, focusing on traceability and improved measurement accuracy in this field. While historically the most studied standards in nanometrology were related to simple geometric structures like step heights or 1D or 2D gratings, now we are facing tasks to measure 3D structures and many unforeseen questions arising from interesting physical

Preparation of boron nitride fiber by organic precursor method

NASA Astrophysics Data System (ADS)

Zhou, Yingying; Sun, Runjun; Zhang, Zhaohuan; Fan, Wei; Zhou, Dan; Sheng, Cuihong

In this paper, boron nitride polymer precursor was made by boric acid, melamine, twelve sodium alkyl sulfate as raw materials and pure water as medium which is heated to 70 °C. Boron nitride precursor polymer was soluble in formic acid solution. The boron nitride precursor can be electrostatically spun at the voltage in 23 kV and the distance between the positive and negative poles is 15 cm. The formed fiber is very uniform. The properties of the precursors were analyzed through electron microscope, infrared spectrum, X-ray and ultraviolet spectrum. The aim of the job is to got the precursor of BN and spun it.

Nanoparticles of wurtzite aluminum nitride from the nut shells

NASA Astrophysics Data System (ADS)

Qadri, S. B.; Gorzkowski, E. P.; Rath, B. B.; Feng, C. R.; Amarasinghe, R.

2016-11-01

Nanoparticles of aluminum nitride were produced from a thermal treatment of a mixture of aluminum oxide (Al2O3) and shells of almond, cashew, coconuts, pistachio, and walnuts in a nitrogen atmosphere at temperatures in excess of 1450 °C. By selecting the appropriate ratios of each nut powder to Al2O3, it is shown that stoichiometric aluminum nitride can be produced by carbo-thermal reduction in nitrogen atmosphere. Using x-ray diffraction analysis, Raman scattering and Fourier Transform Infrared spectroscopy, it is demonstrated that aluminum nitride consists of pure wurtzite phase. Transmission electron microscopy showed the formation of nanoparticles and in some cases nanotubes of AlN.

Apparatus for the production of boron nitride nanotubes

DOEpatents

Smith, Michael W; Jordan, Kevin

2014-06-17

An apparatus for the large scale production of boron nitride nanotubes comprising; a pressure chamber containing; a continuously fed boron containing target; a source of thermal energy preferably a focused laser beam; a cooled condenser; a source of pressurized nitrogen gas; and a mechanism for extracting boron nitride nanotubes that are condensed on or in the area of the cooled condenser from the pressure chamber.

Infrared Dielectric Properties of Low-stress Silicon Nitride

NASA Technical Reports Server (NTRS)

Cataldo, Giuseppe; Beall, James A.; Cho, Hsiao-Mei; McAndrew, Brendan; Niemack, Michael D.; Wollack, Edward J.

2012-01-01

Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-IR regime are derived from the observed transmittance spectra for a commonly employed low-stress silicon nitride formulation. The experimental, modeling, and numerical methods used to extract the dielectric parameters with an accuracy of approximately 4% are presented.

Evaluation of boron nitride nanotubes and hexagonal boron nitrides as nanocarriers for cancer drugs.

PubMed

Emanet, Melis; Şen, Özlem; Çulha, Mustafa

2017-04-01

Boron nitride nanotubes (BNNTs) and hexagonal boron nitrides (hBNs) are novel nanostructures with high mechanical strengths, large surface areas and excellent biocompatibilities. Here, the potential use of BNNTs and hBNs as nanocarriers was comparatively investigated for use with cancer drugs. Doxorubicin (Dox) and folate are used as model drugs and targeting agents, respectively. The obtained results indicate that BNNTs have about a threefold higher Dox loading capacity than hBNs. It was also found that cellular uptake of folate-Dox-BNNTs was much higher when compared with Dox-BNNTs for HeLa cells, due to the presence of folate receptors on the cell surface, leading to increased cancer cell death. In summary, folate and Dox conjugated BNNTs are promising agents in nanomedicine and may have potential drug delivery applications.

Synthesis of crumpled nanosheets of polymeric carbon nitride from melamine cyanurate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dante, Roberto C., E-mail: rcdante@yahoo.com; Martín-Ramos, Pablo; Sánchez-Arévalo, F.M.

2013-05-01

Polymeric carbon nitride was synthesized by pyrolysis in nitrogen flux at different temperatures between 450 and 700 °C using melamine cyanurate as a reagent and sulfuric acid as a catalyst. The obtained carbon nitride consisted of curled nanosheets (650 °C), and globular particles (700 °C) with formula C₆N₇NHNH₂. The reaction yield of the catalyzed reaction was around the 15% for the sample treated at 700 °C, in a tapped crucible. The optical band gap of the polymer obtained at 700 °C is around 2.9 eV. The gap to the Fermi level is around 2 eV, considerably above the half ofmore » the band gap (due to electrons trapped in the gap), indicating that the polymer is probably a n-type semiconductor. - Graphical abstract: Transition from amorphous to crystalline carbon nitride, which is composed of globular particles and is a n-type wide band semiconductor. Highlights: • We synthetized carbon nitride using melamine cyanurate. • The reaction of carbon nitride formation is catalyzed by sulfuric acid. • The carbon nitride obtained at 700 °C is composed of globular particles. • The material obtained at 700 °C is a n-type semiconductor.« less

Rolling Contact Fatigue Failure Mechanisms of Plasma-Nitrided Ductile Cast Iron

NASA Astrophysics Data System (ADS)

Wollmann, D.; Soares, G. P. P. P.; Grabarski, M. I.; Weigert, N. B.; Escobar, J. A.; Pintaude, G.; Neves, J. C. K.

2017-05-01

Rolling contact fatigue (RCF) of a nitrided ductile cast iron was investigated. Flat washers machined from a pearlitic ductile cast iron bar were quenched and tempered to maximum hardness, ground, polished and divided into four groups: (1) specimens tested as quenched and tempered; (2) specimens plasma-nitrided for 8 h at 400 °C; (3) specimens plasma-nitrided and submitted to a diffusion process for 16 h at 400 °C; and (4) specimens submitted to a second tempering for 24 h at 400 °C. Hardness profiles, phase analyses and residual stress measurements by x-ray diffraction, surface roughness and scanning electron microscopy were applied to characterize the surfaces at each step of this work. Ball-on-flat washer tests were conducted with a maximum contact pressure of 3.6 GPa, under flood lubrication with a SAE 90 API GL-5 oil at 50 °C. Test ending criterion was the occurrence of a spalling. Weibull analysis was used to characterize RCF's lifetime data. Plasma-nitrided specimens exhibited a shorter RCF lifetime than those just quenched and tempered. The effects of nitriding on the mechanical properties and microstructure of the ductile cast iron are discussed in order to explain the shorter endurance of nitrided samples.

New directions for nanoscale thermoelectric materials research

NASA Technical Reports Server (NTRS)

Dresselhaus, M. S.; Chen, G.; Tang, M. Y.; Yang, R. G.; Lee, H.; Wang, D. Z.; Ren, F.; Fleurial, J. P.; Gogna, P.

2005-01-01

Many of the recent advances in enhancing the thermoelectric figure of merit are linked to nanoscale phenomena with both bulk samples containing nanoscale constituents and nanoscale materials exhibiting enhanced thermoelectric performance in their own right. Prior theoretical and experimental proof of principle studies on isolated quantum well and quantum wire samples have now evolved into studies on bulk samples containing nanostructured constituents. In this review, nanostructural composites are shown to exhibit nanostructures and properties that show promise for thermoelectric applications. A review of some of the results obtained to date are presented.

Osteoblastlike cell adhesion on titanium surfaces modified by plasma nitriding.

PubMed

da Silva, Jose Sandro Pereira; Amico, Sandro Campos; Rodrigues, Almir Olegario Neves; Barboza, Carlos Augusto Galvao; Alves, Clodomiro; Croci, Alberto Tesconi

2011-01-01

The aim of this study was to evaluate the characteristics of various titanium surfaces modified by cold plasma nitriding in terms of adhesion and proliferation of rat osteoblastlike cells. Samples of grade 2 titanium were subjected to three different surface modification processes: polishing, nitriding by plasma direct current, and nitriding by cathodic cage discharge. To evaluate the effect of the surface treatment on the cellular response, the adhesion and proliferation of osteoblastlike cells (MC3T3) were quantified and the results were analyzed by Kruskal-Wallis and Friedman statistical tests. Cellular morphology was observed by scanning electron microscopy. There was more MC3T3 cell attachment on the rougher surfaces produced by cathodic cage discharge compared with polished samples (P < .05). Plasma nitriding improves titanium surface roughness and wettability, leading to osteoblastlike cell adhesion.

Synthesis of nanowires and nanoparticles of cubic aluminium nitride

NASA Astrophysics Data System (ADS)

Balasubramanian, C.; Godbole, V. P.; Rohatgi, V. K.; Das, A. K.; Bhoraskar, S. V.

2004-03-01

Nanostructures of cubic aluminium nitride were synthesized by DC arc-plasma-induced melting of aluminium in a nitrogen-argon ambient. The material flux ejected from the molten aluminium surface was found to react with nitrogen under highly non-equilibrium conditions and subsequently condense on a water-cooled surface to yield a mixture of nanowires and nanoparticles of crystalline cubic aluminium nitride. Both x-ray diffraction and electron diffraction measurements revealed that the as-synthesized nitrides adopted the cubic phase. Fourier transform infrared spectroscopy was used to understand the bonding configuration. Microstructural features of the synthesized material were best studied by transmission electron microscopy. From these analyses cubic aluminium nitride was found to be the dominating phase for both nanowires and nanoparticles synthesized at low currents. The typical particle size distribution was found to range over 15-80 nm, whereas the wires varied from 30 to 100 nm in diameter and 500 to 700 nm in length, depending upon the process parameters such as arc current and the nitrogen pressure. The reaction products inside the plasma zone were also obtained theoretically by minimization of free energy and the favourable zone temperature necessary for the formation of aluminium nitride was found to be {\\sim } 6000 K. Results are discussed in view of the highly non-equilibrium conditions that prevail during the arc-plasma synthesis.

Effects of Temperature on Microstructure and Wear of Salt Bath Nitrided 17-4PH Stainless Steel

NASA Astrophysics Data System (ADS)

Wang, Jun; Lin, Yuanhua; Fan, Hongyuan; Zeng, Dezhi; Peng, Qian; Shen, Baoluo

2012-08-01

Salt bath nitriding of 17-4 PH martensitic precipitation hardening stainless steels was conducted at 610, 630, and 650 °C for 2 h using a complex salt bath heat-treatment, and the properties of the nitrided surface were systematically evaluated. Experimental results revealed that the microstructure and phase constituents of the nitrided surface alloy are highly process condition dependent. When 17-4PH stainless steel was subjected to complex salt bathing nitriding, the main phase of the nitrided layer was expanded martensite (α'), expanded austenite (γN), CrN, Fe4N, and (Fe,Cr) x O y . In the sample nitrided above 610 °C, the expanded martensite transformed into expanded austenite. But in the sample nitrided at 650 °C, the expanded austenite decomposed into αN and CrN. The decomposed αN then disassembled into CrN and alpha again. The nitrided layer depth thickened intensively with the increasing nitriding temperature. The activation energy of nitriding in this salt bath was 125 ± 5 kJ/mol.

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

NASA Technical Reports Server (NTRS)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Conductive and robust nitride buffer layers on biaxially textured substrates

DOEpatents

Sankar, Sambasivan; Goyal, Amit; Barnett, Scott A.; Kim, Ilwon; Kroeger, Donald M.

2004-08-31

The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.

Conductive and robust nitride buffer layers on biaxially textured substrates

DOEpatents

Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

2009-03-31

The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

Tribological and microstructural characteristics of ion-nitrided steels

NASA Technical Reports Server (NTRS)

Spalvins, T.

1983-01-01

Three steels AISI 4140, AISI 4340 and AISI 304 stainless steel were ion nitrided in a plasma consisting of a 75:25 mixture of H2:N2, sometimes with a trace of CH4. Their surface topography was characterized by SEM and two distinct compound phases were identified: the gamma and the epsilon. The core-case hardness profiles were also established. The low Cr alloy steels have an extended diffusion zone in contrast to the 304 stainless steels which have a sharp interface. The depth of ion-nitriding is increased as the Cr content is decreased. Friction tests reveal that the gamma surface phase has a lower coefficient of friction than the epsilon phase. The lowest coefficient of friction is achieved when both the rider and the specimen surface are ion nitrided.

Alumina-based ceramic composite

DOEpatents

Alexander, K.B.; Tiegs, T.N.; Becher, P.F.; Waters, S.B.

1996-07-23

An improved ceramic composite comprising oxide ceramic particulates, nonoxide ceramic particulates selected from the group consisting of carbides, borides, nitrides of silicon and transition metals and mixtures thereof, and a ductile binder selected from the group consisting of metallic, intermetallic alloys and mixtures thereof is described. The ceramic composite is made by blending powders of the ceramic particulates and the ductile to form a mixture and consolidating the mixture of under conditions of temperature and pressure sufficient to produce a densified ceramic composite. 5 figs.

Thermodynamic analysis of chemical compatibility of several reinforcement materials with niobium aluminides

NASA Technical Reports Server (NTRS)

Misra, Ajay K.

1989-01-01

Chemical compatibility of several reinforcement materials with three niobium aluminides, Nb3Al, Nb2Al, and NbAl3, were examined from thermodynamic considerations. The reinforcement materials considered in this study include carbides, borides, nitrides, oxides, silicides, and Engel-Brewer compounds. Thermodynamics of the Nb-Al system were reviewed and activities of Nb and Al were derived at desired calculation temperatures. Criteria for chemical compatibility between the reinforcement material and Nb-Al compounds have been defined and several chemically compatible reinforcement materials have been identified.

Friction and transfer behavior of pyrolytic boron nitride in contact with various metals

NASA Technical Reports Server (NTRS)

Buckley, D. H.

1976-01-01

Sliding friction experiments were conducted with pyrolytic boron nitride in sliding contact with itself and various metals. Auger emission spectroscopy was used to monitor transfer of pyrolytic boron nitride to metals and metals to pyrolytic boron nitride. Results indicate that the friction coefficient for pyrolytic boron nitride in contact with metals can be related to the chemical activity of the metals and more particularly to the d valence bond character of the metal. Transfer was found to occur to all metals except silver and gold and the amount of transfer was less in the presence than in the absence of metal oxide. Friction was less for pyrolytic boron nitride in contact with a metal in air than in vacuum.

Iron-based alloy and nitridation treatment for PEM fuel cell bipolar plates

DOEpatents

Brady, Michael P [Oak Ridge, TN; Yang, Bing [Oak Ridge, TN; Maziasz, Philip J [Oak Ridge, TN

2010-11-09

A corrosion resistant electrically conductive component that can be used as a bipolar plate in a PEM fuel cell application is composed of an alloy substrate which has 10-30 wt. % Cr, 0.5 to 7 wt. % V, and base metal being Fe, and a continuous surface layer of chromium nitride and vanadium nitride essentially free of base metal. A oxide layer of chromium vanadium oxide can be disposed between the alloy substrate and the continuous surface nitride layer. A method to prepare the corrosion resistant electrically conductive component involves a two-step nitridization sequence by exposing the alloy to a oxygen containing gas at an elevated temperature, and subsequently exposing the alloy to an oxygen free nitrogen containing gas at an elevated temperature to yield a component where a continuous chromium nitride layer free of iron has formed at the surface.

Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sowers, A.T.; Christman, J.A.; Bremser, M.D.

1997-10-01

Cold cathode structures have been fabricated using AlN and graded AlGaN structures (deposited on n-type 6H-SiC) as the thin film emitting layer. The cathodes consist of an aluminum grid layer separated from the nitride layer by a SiO{sub 2} layer and etched to form arrays of either 1, 3, or 5 {mu}m holes through which the emitting nitride surface is exposed. After fabrication, a hydrogen plasma exposure was employed to activate the cathodes. Cathode devices with 5 {mu}m holes displayed emission for up to 30 min before failing. Maximum emission currents ranged from 10{endash}100 nA and required grid voltages rangingmore » from 20{endash}110 V. The grid currents were typically 1 to 10{sup 4} times the collector currents. {copyright} {ital 1997 American Institute of Physics.}« less

Correlation between structural stability of LiBH4 and cation electronegativity in metal borides: an experimental insight for catalyst design.

PubMed

Cai, Weitong; Yang, Yuanzheng; Tao, Pingjun; Ouyang, Liuzhang; Wang, Hui

2018-04-03

Nanosized metal borides MBx (M = Mg, Ti, Fe, Si) are found to play an important role in enhancing the hydrogen storage performance of LiBH4 in this work. The hydrogen storage behavior and mechanism of these modified systems are investigated through TPD-MS, XRD, FTIR and SEM characterization methods. By introducing these metal borides into LiBH4 through ball milling, the systems display three dehydrogenation stages disclosing their similarity and distinction. The 1st stage starts at 190 °C, the 2nd stage ranges from 280 °C to 400 °C and the 3rd stage ends at 550 °C with a peak at round 440 °C similar to that of pristine LiBH4. Distinguishing features exist at the 2nd stage revealing the effectiveness of MBx in an order of MgB2 < TiB2 < FeB < SiB4. Significantly, reversibility up to 9.7 wt% is achieved from LiBH4 with assistance of SiB4. The catalytic effect of MBx is influenced by the Pauling electronegativity of M in MBx and the interfacial contact characteristic between LiBH4 and MBx. The larger electronegativity leads to an enhanced catalytic effect and consequently lower temperature at the major stage. In contrast to the components in the solid state, the molten LiBH4 promotes a catalytic effect due to a superior interfacial contact. These results provide an insight into designing high-performance catalysts applied to LiBH4 as a hydrogen storage material.

Metallic Borides, La 2 Re 3 B 7 and La 3 Re 2 B 5 , Featuring Extensive Boron–Boron Bonding

DOE PAGES

Bugaris, Daniel E.; Malliakas, Christos D.; Chung, Duck Young; ...

2016-01-26

We synthesized La 2Re 3B 7 and La 3Re 2B 5 in single-crystalline form from a molten La/Ni eutectic at 1000°C, in the first example of the flux crystal growth of ternary rare-earth rhenium borides. Both compounds crystallize in their own orthorhombic structure types, with La 2Re 3B 7 (space group Pcca) having lattice parameters a = 7.657(2) Å, b = 6.755(1) Å, and c = 11.617(2) Å, and La 3Re 2B 5 (space group Pmma) having lattice parameters a = 10.809(2) Å, b = 5.287(1) Å, and c = 5.747(1) Å. Furthermore, the compounds possess three-dimensional framework structures thatmore » are built up from rhenium boride polyhedra and boron-boron bonding. La 3Re 2B 5 features fairly common B 2 dumbbells, whereas La 2Re 3B 7 has unique one-dimensional subunits composed of alternating triangular B3 and trans-B4 zigzag chain fragments. Also observed in La 3Re 2B 5 is an unusual coordination of B by an octahedron of La atoms. Electronic band structure calculations predict that La 2Re 3B 7 is a semimetal, which is observed in the electrical resistivity data as measured on single crystals, with behavior obeying the Bloch-Grüneisen model and a room-temperature resistivity ρ300K of ~ 375 μΩ cm. The electronic band structure calculations also suggest that La 3Re 2B 5 is a regular metal.« less

Metallic Borides, La 2 Re 3 B 7 and La 3 Re 2 B 5 , Featuring Extensive Boron–Boron Bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bugaris, Daniel E.; Malliakas, Christos D.; Chung, Duck Young

We synthesized La 2Re 3B 7 and La 3Re 2B 5 in single-crystalline form from a molten La/Ni eutectic at 1000°C, in the first example of the flux crystal growth of ternary rare-earth rhenium borides. Both compounds crystallize in their own orthorhombic structure types, with La 2Re 3B 7 (space group Pcca) having lattice parameters a = 7.657(2) Å, b = 6.755(1) Å, and c = 11.617(2) Å, and La 3Re 2B 5 (space group Pmma) having lattice parameters a = 10.809(2) Å, b = 5.287(1) Å, and c = 5.747(1) Å. Furthermore, the compounds possess three-dimensional framework structures thatmore » are built up from rhenium boride polyhedra and boron-boron bonding. La 3Re 2B 5 features fairly common B 2 dumbbells, whereas La 2Re 3B 7 has unique one-dimensional subunits composed of alternating triangular B3 and trans-B4 zigzag chain fragments. Also observed in La 3Re 2B 5 is an unusual coordination of B by an octahedron of La atoms. Electronic band structure calculations predict that La 2Re 3B 7 is a semimetal, which is observed in the electrical resistivity data as measured on single crystals, with behavior obeying the Bloch-Grüneisen model and a room-temperature resistivity ρ300K of ~ 375 μΩ cm. The electronic band structure calculations also suggest that La 3Re 2B 5 is a regular metal.« less

Synthesis of Continuous Boron Nitride Nanofibers by Electrospinning

NASA Astrophysics Data System (ADS)

Li, Xia; Wen, G.; Zhang, Tao; Xia, Long; Zhong, Bo; Fan, Shaoyu

Continuous boron nitride nanofibers (BNNFs) have been gotten by electrospinning. The appropriate precursor of BNNFs was electrospinned to green born nitride nanofibers (GBNNFs) with temperatures from 80°C to 100°C in the protection of N2. By successive heat treatments in N2, the organics in GBNNFs disappeared and BN ceramics nanofibers came into being. The average diameters of BNNFs by electrospinning are less than 10 μm

Method of nitriding, carburizing, or oxidizing refractory metal articles using microwaves

DOEpatents

Holcombe, Cressie E.; Dykes, Norman L.; Tiegs, Terry N.

1992-01-01

A method of nitriding an article of refractory-nitride-forming metal or metalloids. A consolidated metal or metalloid article is placed inside a microwave oven and nitrogen containing gas is introduced into the microwave oven. The metal or metalloid article is heated to a temperature sufficient to react the metal or metalloid with the nitrogen by applying a microwave energy within the microwave oven. The metal or metalloid article is maintained at that temperature for a period of time sufficient to convert the article of metal or metalloid to an article of refractory nitride. in addition, a method of applying a coating, such as a coating of an oxide, a carbide, or a carbo-nitride, to an article of metal or metalloid by microwave heating.

Method of nitriding, carburizing, or oxidizing refractory metal articles using microwaves

DOEpatents

Holcombe, C.E.; Dykes, N.L.; Tiegs, T.N.

1992-10-13

A method of nitriding an article of refractory-nitride-forming metal or metalloids. A consolidated metal or metalloid article is placed inside a microwave oven and nitrogen containing gas is introduced into the microwave oven. The metal or metalloid article is heated to a temperature sufficient to react the metal or metalloid with the nitrogen by applying a microwave energy within the microwave oven. The metal or metalloid article is maintained at that temperature for a period of time sufficient to convert the article of metal or metalloid to an article of refractory nitride. in addition, a method of applying a coating, such as a coating of an oxide, a carbide, or a carbo-nitride, to an article of metal or metalloid by microwave heating.

Silicon Nitride Equation of State

NASA Astrophysics Data System (ADS)

Swaminathan, Pazhayannur; Brown, Robert

2015-06-01

This report presents the development a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4) . Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonalβ-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products and then combined with the single component solid models to study the global phase diagram. Sponsored by the NASA Goddard Space Flight Center Living With a Star program office.

Microscopic modeling of nitride intersubband absorbance

NASA Astrophysics Data System (ADS)

Montano, Ines; Allerman, A. A.; Wierer, J. J.; Moseley, M.; Skogen, E. J.; Tauke-Pedretti, A.; Vawter, G. A.

III-nitride intersubband structures have recently attracted much interest because of their potential for a wide variety of applications ranging from electro-optical modulators to terahertz quantum cascade lasers. To overcome present simulation limitations we have developed a microscopic absorbance simulator for nitride intersubband devices. Our simulator calculates the band structure of nitride intersubband systems using a fully coupled 8x8 k.p Hamiltonian and determines the material response of a single period in a density-matrix-formalism by solving the Heisenberg equation including many-body and dephasing contributions. After calculating the polarization due to intersubband transitions in a single period, the resulting absorbance of a superlattice structure including radiative coupling between the different periods is determined using a non-local Green's-function formalism. As a result our simulator allows us to predict intersubband absorbance of superlattice structures with microscopically determined lineshapes and linewidths accounting for both many-body and correlation contributions. This work is funded by Sandia National Laboratories Laboratory Directed Research and Development program. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin.

Transferrable monolithic III-nitride photonic circuit for multifunctional optoelectronics

NASA Astrophysics Data System (ADS)

Shi, Zheng; Gao, Xumin; Yuan, Jialei; Zhang, Shuai; Jiang, Yan; Zhang, Fenghua; Jiang, Yuan; Zhu, Hongbo; Wang, Yongjin

2017-12-01

A monolithic III-nitride photonic circuit with integrated functionalities was implemented by integrating multiple components with different functions into a single chip. In particular, the III-nitride-on-silicon platform is used as it integrates a transmitter, a waveguide, and a receiver into a suspended III-nitride membrane via a wafer-level procedure. Here, a 0.8-mm-diameter suspended device architecture is directly transferred from silicon to a foreign substrate by mechanically breaking the support beams. The transferred InGaN/GaN multiple-quantum-well diode (MQW-diode) exhibits a turn-on voltage of 2.8 V with a dominant electroluminescence peak at 453 nm. The transmitter and receiver share an identical InGaN/GaN MQW structure, and the integrated photonic circuit inherently works for on-chip power monitoring and in-plane visible light communication. The wire-bonded monolithic photonic circuit on glass experimentally demonstrates in-plane data transmission at 120 Mb/s, paving the way for diverse applications in intelligent displays, in-plane light communication, flexible optical sensors, and wearable III-nitride optoelectronics.

Ordering of lipid membranes altered by boron nitride nanosheets.

PubMed

Zhang, Yonghui; Li, Zhen; Chan, Chun; Ma, Jiale; Zhi, Chunyi; Cheng, Xiaolin; Fan, Jun

2018-02-07

Boron nitride nanosheets are novel promising nanomaterials with a lower cytotoxicity than graphene making them a better candidate for biomedical applications. However, there is no systematic study on how they interact with cell membranes. Here we employed large scale all-atom molecular dynamics simulations to provide molecular details of the structure and properties of membranes after the insertion of boron nitride nanosheets. Our results reveal that the boron nitride nanosheet can extract phospholipids from the lipid bilayers and is enveloped by the membrane. Afterwards, the acyl chains of lipid molecules re-orient and become more ordered. As a result, a fluid to gel phase transition occurs in the 1,2-dimyristoyl-sn-glycero-3-phosphocholine bilayer. Consequently, the bending moduli of the bilayers increase, and the diffusivity of the individual lipid molecule decreases. These changes will affect relevant cellular activities, such as endocytosis and signal transduction. Our study provides novel insights into the biocompatibility and cytotoxicity of boron nitride nanosheets, which may facilitate the design of safer nanocarriers, antibiotics and other bio-nanotechnology applications.

Nitride micro-LEDs and beyond--a decade progress review.

PubMed

Jiang, H X; Lin, J Y

2013-05-06

Since their inception, micro-size light emitting diode (µLED) arrays based on III-nitride semiconductors have emerged as a promising technology for a range of applications. This paper provides an overview on a decade progresses on realizing III-nitride µLED based high voltage single-chip AC/DC-LEDs without power converters to address the key compatibility issue between LEDs and AC power grid infrastructure; and high-resolution solid-state self-emissive microdisplays operating in an active driving scheme to address the need of high brightness, efficiency and robustness of microdisplays. These devices utilize the photonic integration approach by integrating µLED arrays on-chip. Other applications of nitride µLED arrays are also discussed.

Semipolar III-nitride laser diodes with zinc oxide cladding.

PubMed

Myzaferi, Anisa; Reading, Arthur H; Farrell, Robert M; Cohen, Daniel A; Nakamura, Shuji; DenBaars, Steven P

2017-07-24

Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm 2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.

Alkaline Capacitors Based on Nitride Nanoparticles

NASA Technical Reports Server (NTRS)

Aldissi, Matt

2003-01-01

High-energy-density alkaline electrochemical capacitors based on electrodes made of transition-metal nitride nanoparticles are undergoing development. Transition- metal nitrides (in particular, Fe3N and TiN) offer a desirable combination of high electrical conductivity and electrochemical stability in aqueous alkaline electrolytes like KOH. The high energy densities of these capacitors are attributable mainly to their high capacitance densities, which, in turn, are attributable mainly to the large specific surface areas of the electrode nanoparticles. Capacitors of this type could be useful as energy-storage components in such diverse equipment as digital communication systems, implanted medical devices, computers, portable consumer electronic devices, and electric vehicles.

Surface improvement and biocompatibility of TiAl 24Nb 10 intermetallic alloy using rf plasma nitriding

NASA Astrophysics Data System (ADS)

Abd El-Rahman, A. M.; Maitz, M. F.; Kassem, M. A.; El-Hossary, F. M.; Prokert, F.; Reuther, H.; Pham, M. T.; Richter, E.

2007-09-01

The present work describes the surface improvement and biocompatibility of TiAl 24Nb 10 intermetallic alloy using rf plasma nitriding. The nitriding process was carried out at different plasma power from 400 W to 650 W where the other plasma conditions were fixed. Grazing incidence X-ray diffractometry (GIXRD), Auger electron spectroscopy (AES), tribometer and a nanohardness tester were employed to characterize the nitrided layer. Further potentiodynamic polarization method was used to describe the corrosion behavior of the un-nitrided and nitrided alloy. It has been found that the Vickers hardness (HV) and corrosion resistance values of the nitrided layers increase with increasing plasma power while the wear rates of the nitrided layers reduce by two orders of magnitude as compared to those of the un-nitrided layer. This improvement in surface properties of the intermetallic alloy is due to formation of a thin modified layer which is composed of titanium nitride in the alloy surface. Moreover, all modified layers were tested for their sustainability as a biocompatible material. Concerning the application area of biocompatibility, the present treated alloy show good surface properties especially for the nitrided alloy at low plasma power of 400 W.

FOREWORD: The physics of III-V nitrides The physics of III-V nitrides

NASA Astrophysics Data System (ADS)

Ridley, B. K.

2009-04-01

The evolution of semiconductor physics is driven by the increasing sophistication of the art of crystal growing and fabrication techniques. From Ge at the birth of the transistor, possibly the purest material ever grown, through Si, the work-horse of the crystal revolution, to the III-Vs, whose optical properties opened up a second front, namely, optoelectronics. Crystal growth with monolayer control gave us quantum wells, superlattices, quantum wires and quantum dots, along with the quantum Hall effect and quantized resistance. The potential for high-power devices triggered interest in the III-V nitrides with their large bandgaps. The nitrides mostly crystallize in the hexagonal form, and this has introduced the phenomenon of spontaneous polarization into mainstream semiconductor physics. Its effect manifests itself in huge electric fields in heterostructures like AlGaN/GaN which, in turn, causes the induction of substantial electron populations in the channel of a HFET without the need for doping. High-power microwave transistors have been successfully fabricated, even though there are features associated with spontaneous polarization that still needs clarifying. Another strange effect is the large electron population on the surface of InN. The lack of a suitable substrate for growing GaN has meant that the dislocation density is higher than we would wish, but that situation is expected to steadily improve. Given the current interest in the physics of nitrides, it is natural to come across a special issue devoted to this topic. The difficulty presented by the surface layer in InN in the attempt to measure transport properties is discussed in the paper by King et al. A property that can affect transport is the lifetime of optical phonons and its dependence on electron density. Measurements of phonon lifetime in InN are reported by Tsen and Ferry, and in GaN channels, via the measure of hot-electron fluctuations, by Matulionis. The dependence on electron density is

Nanoscale infrared absorption spectroscopy of individual nanoparticles enabled by scattering-type near-field microscopy.

PubMed

Stiegler, Johannes M; Abate, Yohannes; Cvitkovic, Antonija; Romanyuk, Yaroslav E; Huber, Andreas J; Leone, Stephen R; Hillenbrand, Rainer

2011-08-23

Infrared absorption spectroscopy is a powerful and widely used tool for analyzing the chemical composition and structure of materials. Because of the diffraction limit, however, it cannot be applied for studying individual nanostructures. Here we demonstrate that the phase contrast in substrate-enhanced scattering-type scanning near-field optical microscopy (s-SNOM) provides a map of the infrared absorption spectrum of individual nanoparticles with nanometer-scale spatial resolution. We succeeded in the chemical identification of silicon nitride nanoislands with heights well below 10 nm, by infrared near-field fingerprint spectroscopy of the Si-N stretching bond. Employing a novel theoretical model, we show that the near-field phase spectra of small particles correlate well with their far-field absorption spectra. On the other hand, the spectral near-field contrast does not scale with the volume of the particles. We find a nearly linear scaling law, which we can attribute to the near-field coupling between the near-field probe and the substrate. Our results provide fundamental insights into the spectral near-field contrast of nanoparticles and clearly demonstrate the capability of s-SNOM for nanoscale chemical mapping based on local infrared absorption. © 2011 American Chemical Society

Friction and Wear of Unlubricated NiTiHf with Nitriding Surface Treatments

NASA Technical Reports Server (NTRS)

Stanford, Malcolm K.

2018-01-01

The unlubricated friction and wear properties of the superelastic materials NiTi and NiTiHf, treated by either gas nitriding or plasma nitriding, have been investigated. Pin on disk testing of the studied materials was performed at sliding speeds from 0.01 to 1m/s at normal loads of 1, 5 or 10N. For all of the studied friction pairs (NiTiHf pins vs. NiTi and NiTiHf disks) over the given parameters, the steady-state coefficients of friction varied from 0.22 to 1.6. Pin wear factors ranged from approximately 1E-6 against the NiTiHf and plasma nitrided disks to approximately 1E-4 for the gas nitrided disks. The plasma nitrided disks provided wear protection in several cases and tended to wear by adhesion. The gas nitrided treatment generated the most pin wear but had essentially no disk wear except at the most severe of the studied conditions (1N load and 1m/s sliding speed). The results of this study are expected to provide guidance for design of components such as gears and fasteners.

A physical model for evaluating uranium nitride specific heat

NASA Astrophysics Data System (ADS)

Baranov, V. G.; Devyatko, Yu. N.; Tenishev, A. V.; Khlunov, A. V.; Khomyakov, O. V.

2013-03-01

Nitride fuel is one of perspective materials for the nuclear industry. But unlike the oxide and carbide uranium and mixed uranium-plutonium fuel, the nitride fuel is less studied. The present article is devoted to the development of a model for calculating UN specific heat on the basis of phonon spectrum data within the solid state theory.

Creating nanoscale emulsions using condensation.

PubMed

Guha, Ingrid F; Anand, Sushant; Varanasi, Kripa K

2017-11-08

Nanoscale emulsions are essential components in numerous products, ranging from processed foods to novel drug delivery systems. Existing emulsification methods rely either on the breakup of larger droplets or solvent exchange/inversion. Here we report a simple, scalable method of creating nanoscale water-in-oil emulsions by condensing water vapor onto a subcooled oil-surfactant solution. Our technique enables a bottom-up approach to forming small-scale emulsions. Nanoscale water droplets nucleate at the oil/air interface and spontaneously disperse within the oil, due to the spreading dynamics of oil on water. Oil-soluble surfactants stabilize the resulting emulsions. We find that the oil-surfactant concentration controls the spreading behavior of oil on water, as well as the peak size, polydispersity, and stability of the resulting emulsions. Using condensation, we form emulsions with peak radii around 100 nm and polydispersities around 10%. This emulsion formation technique may open different routes to creating emulsions, colloidal systems, and emulsion-based materials.

Second-harmonic generation in substoichiometric silicon nitride layers

NASA Astrophysics Data System (ADS)

Pecora, Emanuele; Capretti, Antonio; Miano, Giovanni; Dal Negro, Luca

2013-03-01

Harmonic generation in optical circuits offers the possibility to integrate wavelength converters, light amplifiers, lasers, and multiple optical signal processing devices with electronic components. Bulk silicon has a negligible second-order nonlinear optical susceptibility owing to its crystal centrosymmetry. Silicon nitride has its place in the microelectronic industry as an insulator and chemical barrier. In this work, we propose to take advantage of silicon excess in silicon nitride to increase the Second Harmonic Generation (SHG) efficiency. Thin films have been grown by reactive magnetron sputtering and their nonlinear optical properties have been studied by femtosecond pumping over a wide range of excitation wavelengths, silicon nitride stoichiometry and thermal processes. We demonstrate SHG in the visible range (375 - 450 nm) using a tunable 150 fs Ti:sapphire laser, and we optimize the SH emission at a silicon excess of 46 at.% demonstrating a maximum SHG efficiency of 4x10-6 in optimized films. Polarization properties, generation efficiency, and the second order nonlinear optical susceptibility are measured for all the investigated samples and discussed in terms of an effective theoretical model. Our findings show that the large nonlinear optical response demonstrated in optimized Si-rich silicon nitride materials can be utilized for the engineering of nonlinear optical functions and devices on a Si chip.

Enhanced cell adhesion on severe peened-plasma nitrided 316L stainless steel

NASA Astrophysics Data System (ADS)

Jayalakshmi, M.; Bhat, Badekai Ramachandra; Bhat, K. Udaya

2018-04-01

Plasma nitriding is an effective technique to enhance the wear resistance of austenitic stainless steels. Recently, severe surface deformation techniques are extensively used prior to nitriding to enhance diffusion kinetics. In the present study, AISI 316L austenitic stainless steel is subjected to peening-nitriding duplex treatment and biocompatibility of treated surfaces is assessed through adhesion of the fibroblast cells. Three-fold increase in the surface microhardness is observed from the un-peened sample to the peened-nitrided sample; with severe peened sample showing intermediate hardness. Similar trend is observed in the number of the fibroblast cells attached to the sample surface. Spreading of some of the fibroblast cells is observed on the sample subjected to duplex treatment; while the other two samples showed only the spindle shaped fibroblasts. Combined influence of surface nanocrystallization and presence of nitride layer is responsible for the improved biocompatibility.

Process dependency of radiation hardness of rapid thermal reoxidized nitrided gate oxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weishin Lu; Kuanchin Lin; Jenngwo Hwu

The radiation hardness of MOS capacitors with various reoxidized nitrided oxide (RNO) structures is studied by changing the durations of rapid thermal processes during sample preparation and by applying irradiation-then-anneal (ITA) treatments on samples after preparation. It is found that the initial flatband voltage and midgap interface trap density of MOS capacitors exhibit turnaround'' dependency on the total time of nitridation and reoxidation processes. For samples with nitrided oxide (NO) structures, the radiation-induced variations of above parameters are also turnaround''-dependent on nitridation time. However, when the reoxidation process is performed, the radiation hardness for all samples will be gradually improvedmore » with increasing reoxidation time no matter what the nitridation time is. The most radiation-hard process for RNO structures is suggested. Finally, it is found that when ITA treatments are applied on samples after preparation, their radiation hardness is much improved.« less

Tribological and microstructural characteristics of ion-nitrided steels

NASA Technical Reports Server (NTRS)

Spalvins, T.

1983-01-01

Three steels AISI 4140, AISI 4340 and AISI 304 stainless steel were ion nitrided in a plasma consisting of a 75:25 mixture of H2:N2, sometimes with a trace of CH4. Their surface topography was characterized by SEM and two distinct compound phases were identified: the gamma and the epsilon. The core-case hardness profiles were also established. The low Cr alloy steels have an extended diffusion zone in contrast to the 3034 stainless steels which have a sharp interface. The depth of ion-nitriding is increased as the Cr content is decreased. Friction tests reveal that the gamma surface phase has a lower coefficient of friction than the epsilon phase. The lowest coefficient of friction is achieved when both the rider and the specimen surface are ion nitrided. Previously announced in STAR as N83-24635

Broccoli-like porous carbon nitride from ZIF-8 and melamine for high performance supercapacitors

NASA Astrophysics Data System (ADS)

Cai, Chenglong; Zou, Yongjin; Xiang, Cuili; Chu, Hailiang; Qiu, Shujun; Sui, Qingli; Xu, Fen; Sun, Lixian; Shah, Afzal

2018-05-01

Broccoli-like porous carbon nitride is synthesized by simple one-step carbonization of a composite comprising a Zn-based zeolitic imidazolate framework (ZIF-8) and melamine. The introduction of melamine into the ZIF-8 framework not only increases the N content of the composite and the surface area of the carbonization product, but also induces the formation of a flower-like structure. The carbon obtained from the ZIF-8/melamine composite by the proposed carbonization process at a temperature of 800 °C (ZM-C-800) is found to have a unique three-dimensional broccoli-like shape, a nanoscale size, and an extremely high doping N content (28.3 at.%). These properties substantially improve the electrochemical performance of ZM-C-800, as represented by a high specific capacitance of 359.1 F g-1 at a current density of 1 A g-1, much higher than that of ZIF-8. Furthermore, a symmetric supercapacitor fabricated with two ZM-C-800 electrodes exhibits a power density of 498.5 W kg-1 for an energy density of 11.4 Wh kg-1. This indicates the strong potential of ZM-C-800 for use in the fabrication of energy storage devices.

Modelling of the modulation properties of arsenide and nitride VCSELs

NASA Astrophysics Data System (ADS)

Wasiak, Michał; Śpiewak, Patrycja; Moser, Philip; Gebski, Marcin; Schmeckebier, Holger; Sarzała, Robert P.; Lott, James A.

2017-02-01

In this paper, using our model of capacitance in vertical-cavity surface-emitting lasers (VCSELs), we analyze certain differences between an oxide-confined arsenide VCSEL emitting in the NIR region, and a nitride VCSEL emitting violet radiation. In the nitride laser its high differential resistance, caused partially by the low conductivity of p-type GaN material and the bottom contact configuration, is one of the main reasons why the nitride VCSEL has much worse modulation properties than the arsenide VCSEL. Using the complicated arsenide structure, we also analyze different possible ways of constructing the laser's equivalent circuit.

Low-Temperature Nitriding of Pure Titanium by using Hollow Cathode RF-DC Plasma

NASA Astrophysics Data System (ADS)

Windajanti, J. M.; S, D. J. Djoko H.; Abdurrouf

2017-05-01

Pure titanium is widely used for the structures and mechanical parts due to its high strength, low density, and high corrosion resistance. Unfortunately, titanium products suffer from low hardness and low wear resistance. Titanium’s surface can be modified by nitriding process to overcome such problems, which is commonly conducted at high temperature. Here, we report the low-temperature plasma nitriding process, where pure titanium was utilized by high-density RF-DC plasma combined with hollow cathode device. To this end, a pure titanium plate was set inside a hollow tube placed on the cathode plate. After heating to 450 °C, a pre-sputtering process was conducted for 1 hour to remove the oxide layer and activate the surface for nitriding. Plasma nitriding using N2/H2 gasses was performed in 4 and 8 hours with the RF voltage of 250 V, DC bias of -500 to -600 V, and gas pressure of 75 to 30 Pa. To study the nitriding mechanism as well as the role of hollow cathode, the nitrided specimen was characterized by SEM, EDX, XRD, and micro-hardness equipment. The TiN compound was obtained with the diffusion zone of nitrogen until 5 μm thickness for 4 hours nitriding process, and 8 μm for 8 hours process. The average hardness also increased from 300 HV in the untreated specimen to 624 HV and 792 HV for 4 and 8 hours nitriding, respectively.

The low-lying quartet electronic states of group 14 diatomic borides XB (X = C, Si, Ge, Sn, Pb)

NASA Astrophysics Data System (ADS)

Pontes, Marcelo A. P.; de Oliveira, Marcos H.; Fernandes, Gabriel F. S.; Da Motta Neto, Joaquim D.; Ferrão, Luiz F. A.; Machado, Francisco B. C.

2018-04-01

The present work focuses in the characterization of the low-lying quartet electronic and spin-orbit states of diatomic borides XB, in which X is an element of group 14 (C, Si, Ge, Sn, PB). The wavefunction was obtained at the CASSCF/MRCI level with a quintuple-ζ quality basis set. Scalar relativistic effects were also taken into account. A systematic and comparative analysis of the spectroscopic properties for the title molecular series was carried out, showing that the (1)4Π→X4Σ- transition band is expected to be measurable by emission spectroscopy to the GeB, SnB and PbB molecules, as already observed for the lighter CB and SiB species.

Nanoscale thermal transport: Theoretical method and application

NASA Astrophysics Data System (ADS)

Zeng, Yu-Jia; Liu, Yue-Yang; Zhou, Wu-Xing; Chen, Ke-Qiu

2018-03-01

With the size reduction of nanoscale electronic devices, the heat generated by the unit area in integrated circuits will be increasing exponentially, and consequently the thermal management in these devices is a very important issue. In addition, the heat generated by the electronic devices mostly diffuses to the air in the form of waste heat, which makes the thermoelectric energy conversion also an important issue for nowadays. In recent years, the thermal transport properties in nanoscale systems have attracted increasing attention in both experiments and theoretical calculations. In this review, we will discuss various theoretical simulation methods for investigating thermal transport properties and take a glance at several interesting thermal transport phenomena in nanoscale systems. Our emphasizes will lie on the advantage and limitation of calculational method, and the application of nanoscale thermal transport and thermoelectric property. Project supported by the Nation Key Research and Development Program of China (Grant No. 2017YFB0701602) and the National Natural Science Foundation of China (Grant No. 11674092).

Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate.

PubMed

Ghazali, Norizzawati Mohd; Yasui, Kanji; Hashim, Abdul Manaf

2014-01-01

Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm(2) using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si.

Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate

PubMed Central

2014-01-01

Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm2 using a mixture of Ga2O3, HCl, NH4OH and H2O for 2 h. Then, the deposited Ga2O3 sample was ammoniated in a horizontal quartz tube single zone furnace at various ammoniating times and temperatures. The complete nitridation of Ga2O3 nanostructures at temperatures of 850°C and below was not observed even the ammoniating time was kept up to 45 min. After the ammoniating process at temperature of 900°C for 15 min, several prominent diffraction peaks correspond to hexagonal GaN (h-GaN) planes were detected, while no diffraction peak of Ga2O3 structure was detected, suggesting a complete transformation of Ga2O3 to GaN. Thus, temperature seems to be a key parameter in a nitridation process where the deoxidization rate of Ga2O3 to generate gaseous Ga2O increase with temperature. The growth mechanism for the transformation of Ga2O3 to GaN was proposed and discussed. It was found that a complete transformation can not be realized without a complete deoxidization of Ga2O3. A significant change of morphological structures takes place after a complete transformation of Ga2O3 to GaN where the original nanorod structures of Ga2O3 diminish, and a new nanowire-like GaN structures appear. These results show that the presented method seems to be promising in producing high-quality h-GaN nanostructures on Si. PMID:25593562

Metal surface nitriding by laser induced plasma

NASA Astrophysics Data System (ADS)

Thomann, A. L.; Boulmer-Leborgne, C.; Andreazza-Vignolle, C.; Andreazza, P.; Hermann, J.; Blondiaux, G.

1996-10-01

We study a nitriding technique of metals by means of laser induced plasma. The synthesized layers are composed of a nitrogen concentration gradient over several μm depth, and are expected to be useful for tribological applications with no adhesion problem. The nitriding method is tested on the synthesis of titanium nitride which is a well-known compound, obtained at present by many deposition and diffusion techniques. In the method of interest, a laser beam is focused on a titanium target in a nitrogen atmosphere, leading to the creation of a plasma over the metal surface. In order to understand the layer formation, it is necessary to characterize the plasma as well as the surface that it has been in contact with. Progressive nitrogen incorporation in the titanium lattice and TiN synthesis are studied by characterizing samples prepared with increasing laser shot number (100-4000). The role of the laser wavelength is also inspected by comparing layers obtained with two kinds of pulsed lasers: a transversal-excited-atmospheric-pressure-CO2 laser (λ=10.6 μm) and a XeCl excimer laser (λ=308 nm). Simulations of the target temperature rise under laser irradiation are performed, which evidence differences in the initial laser/material interaction (material heated thickness, heating time duration, etc.) depending on the laser features (wavelength and pulse time duration). Results from plasma characterization also point out that the plasma composition and propagation mode depend on the laser wavelength. Correlation of these results with those obtained from layer analyses shows at first the important role played by the plasma in the nitrogen incorporation. Its presence is necessary and allows N2 dissociation and a better energy coupling with the target. Second, it appears that the nitrogen diffusion governs the nitriding process. The study of the metal nitriding efficiency, depending on the laser used, allows us to explain the differences observed in the layer features

Methods for improved growth of group III nitride buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphologymore » of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).« less

Group III-nitride thin films grown using MBE and bismuth

DOEpatents

Kisielowski, Christian K.; Rubin, Michael

2002-01-01

The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

Group III-nitride thin films grown using MBE and bismuth

DOEpatents

Kisielowski, Christian K.; Rubin, Michael

2000-01-01

The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

Tribo-electrochemical characterization of hafnium multilayer systems deposited on nitride/vanadium nitride AISI 4140 steel

NASA Astrophysics Data System (ADS)

Mora, M.; Vera, E.; Aperador, W.

2016-02-01

In this work is presented the synergistic behaviour among corrosion/wear (tribocorrosion) of the multilayer coatings hafnium nitride/vanadium nitride [HfN/VN]n. The multilayers were deposited on AISI 4140 steel using the technique of physical vapor deposition PVD magnetron sputtering, the tests were performed using a pin-on-disk tribometer, which has an adapted potentiostat galvanostat with three-electrode electrochemical cell. Tribocorrosive parameters such as: Friction coefficient between the coating and the counter body (100 Cr6 steel ball); Polarization resistance by means of electrochemical impedance spectroscopy technique and corrosion rate by polarization curves were determined. It was observed an increase in the polarization resistance, a decrease in the corrosion rate and a low coefficient of friction in comparison with the substrate, due to an increase on the number of bilayers.

Impurity-induced disorder in III-nitride materials and devices

DOEpatents

Wierer, Jr., Jonathan J; Allerman, Andrew A

2014-11-25

A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces.

Development of III-Nitride Based THz Inter-Subband Lasers

DTIC Science & Technology

2009-09-30

tested both resonant tunneling diodes and quantum well infrared photodetectors in order to investigate quantum transport in III-Nitrides. Based on the...and tested both resonant tunneling diodes and quantum well infrared photodetectors in order to investigate quantum transport in III- Nitrides. Based...strain on bandstructure and piezo-as well as spontaneous- electric fields. Interband photoluminescence and intersubband absorption measurements were

Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

DOEpatents

Lowden, Richard A.

1994-01-01

A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.

Physical fundamentals of criterial estimation of nitriding technology for parts of friction units

NASA Astrophysics Data System (ADS)

Kuksenova, L. I.; Gerasimov, S. A.; Lapteva, V. G.; Alekseeva, M. S.

2013-03-01

Characteristics of the structure and properties of surface layers of nitrided structural steels and alloys, which affect the level of surface fracture under friction, are studied. A generalized structural parameter for optimizing the nitriding process and a rapid method for estimating the quality of the surface layer of nitrided parts of friction units are developed.

Use of additives to improve microstructures and fracture resistance of silicon nitride ceramics

DOEpatents

Becher, Paul F [Oak Ridge, TN; Lin, Hua-Tay [Oak Ridge, TN

2011-06-28

A high-strength, fracture-resistant silicon nitride ceramic material that includes about 5 to about 75 wt-% of elongated reinforcing grains of beta-silicon nitride, about 20 to about 95 wt-% of fine grains of beta-silicon nitride, wherein the fine grains have a major axis of less than about 1 micron; and about 1 to about 15 wt-% of an amorphous intergranular phase comprising Si, N, O, a rare earth element and a secondary densification element. The elongated reinforcing grains have an aspect ratio of 2:1 or greater and a major axis measuring about 1 micron or greater. The elongated reinforcing grains are essentially isotropically oriented within the ceramic microstructure. The silicon nitride ceramic exhibits a room temperature flexure strength of 1,000 MPa or greater and a fracture toughness of 9 MPa-m.sup.(1/2) or greater. The silicon nitride ceramic exhibits a peak strength of 800 MPa or greater at 1200 degrees C. Also included are methods of making silicon nitride ceramic materials which exhibit the described high flexure strength and fracture-resistant values.

Process for producing ceramic nitrides anc carbonitrides and their precursors

DOEpatents

Brown, G.M.; Maya, L.

1987-02-25

A process for preparing ceramic nitrides and carbon nitrides in the form of very pure, fine particulate powder. Appropriate precursors is prepared by reaching a transition metal alkylamide with ammonia to produce a mixture of metal amide and metal imide in the form of an easily pyrolyzable precipitate.

Low-temperature nitridation of manganese and iron oxides using NaNH2 molten salt.

PubMed

Miura, Akira; Takei, Takahiro; Kumada, Nobuhiro

2013-10-21

Manganese and iron nitrides are important functional materials, but their synthesis processes from oxides often require high temperatures. Herein, we show a novel meta-synthesis method for manganese and iron nitrides by low-temperature nitridation of their oxides using NaNH2 molten salt as the nitrogen source in an autoclave at 240 °C. With this method, nitridation of micrometer-sized oxide particles kept their initial morphologies, but the size of the primary particles decreased. The thermodynamic driving force is considered to be the conversion of oxides to sodium hydroxide, and the kinetic of nitridation is improved by the decrease of particle size and the low melting point of NaNH2. This technique as developed here has the advantages of low reaction temperature, reduced consumption of ammonia, employing nonspecialized equipment, and providing facile control of the reactions for producing nitrides from oxides.

Catalytic CVD synthesis of boron nitride and carbon nanomaterials - synergies between experiment and theory.

PubMed

McLean, Ben; Eveleens, Clothilde A; Mitchell, Izaac; Webber, Grant B; Page, Alister J

2017-10-11

Low-dimensional carbon and boron nitride nanomaterials - hexagonal boron nitride, graphene, boron nitride nanotubes and carbon nanotubes - remain at the forefront of advanced materials research. Catalytic chemical vapour deposition has become an invaluable technique for reliably and cost-effectively synthesising these materials. In this review, we will emphasise how a synergy between experimental and theoretical methods has enhanced the understanding and optimisation of this synthetic technique. This review examines recent advances in the application of CVD to synthesising boron nitride and carbon nanomaterials and highlights where, in many cases, molecular simulations and quantum chemistry have provided key insights complementary to experimental investigation. This synergy is particularly prominent in the field of carbon nanotube and graphene CVD synthesis, and we propose here it will be the key to future advances in optimisation of CVD synthesis of boron nitride nanomaterials, boron nitride - carbon composite materials, and other nanomaterials generally.

Clusterization Effects in III-V Nitrides: Nitrogen Vacancies, and Si and Mg Impurities in Aluminum Nitride and Gallium Nitride

NASA Astrophysics Data System (ADS)

Gubanov, V. A.; Pentaleri, E. A.; Boekema, C.; Fong, C. Y.; Klein, B. M.

1997-03-01

We have investigated clusterization of nitrogen vacancies and Si and Mg doping impurities in zinc-blende aluminum nitride (c-AlN) and gallium nitride (c-GaN) by the tight-binding LMTO technique. The calculations used 128-site supercells. Si and Mg atoms replacing ions in both the cation and anion sublattices of the host lattices of the host crystals have been considered. The Mg impurity at cation sites is found to form partially occupied states at the valence-band edge, and may result in p-type conductivity. When Si substitutes for Ga, the impurity band is formed at the conduction-band edge, resulting in n-type conductivity. Si impurities at cation sites, and Mg impurity at anion sites are able to form resonance states in the gap. The influence of impurity clusterization in the host lattice and interstitial sites on electronic properties of c-AlN and c-GaN crystals are modeled. The changes in vacancy- and impurity-state energies, bonding type, localization, density of states at the Fermi level in different host lattices, their dependence on impurity/vacancy concentration are analyzed and compared with the experimental data.

Defect reduction in seeded aluminum nitride crystal growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.

2017-04-18

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Defect reduction in seeded aluminum nitride crystal growth

DOEpatents

Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A.

2017-06-06

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density .ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Defect reduction in seeded aluminum nitride crystal growth

DOEpatents

Bondokov, Robert T.; Schowalter, Leo J.; Morgan, Kenneth; Slack, Glen A; Rao, Shailaja P.; Gibb, Shawn Robert

2017-09-26

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Grafting titanium nitride surfaces with sodium styrene sulfonate thin films

PubMed Central

Zorn, Gilad; Migonney, Véronique; Castner, David G.

2014-01-01

The importance of titanium nitride lies in its high hardness and its remarkable resistance to wear and corrosion, which has led to its use as a coating for the heads of hip prostheses, dental implants and dental surgery tools. However, the usefulness of titanium nitride coatings for biomedical applications could be significantly enhanced by modifying their surface with a bioactive polymer film. The main focus of the present work was to graft a bioactive poly(sodium styrene sulfonate) (pNaSS) thin film from titanium nitride surfaces via a two-step procedure: first modifying the surface with 3-methacryloxypropyltrimethoxysilane (MPS) and then grafting the pNaSS film from the MPS modified titanium through free radical polymerization. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) were used after each step to characterize success and completeness of each reaction. The surface region of the titanium nitride prior to MPS functionalization and NaSS grafting contained a mixture of titanium nitride, oxy-nitride, oxide species as well as adventitious surface contaminants. After MPS functionalization, Si was detected by XPS, and characteristic MPS fragments were detected by ToF-SIMS. After NaSS grafting, Na and S were detected by XPS and characteristic NaSS fragments were detected by ToF-SIMS. The XPS determined thicknesses of the MPS and NaSS overlayers were ∼1.5 and ∼1.7 nm, respectively. The pNaSS film density was estimated by the toluidine blue colorimetric assay to be 260 ± 70 ng/cm2. PMID:25280842

Erosion-corrosion resistance properties of 316L austenitic stainless steels after low-temperature liquid nitriding

NASA Astrophysics Data System (ADS)

Zhang, Xiangfeng; Wang, Jun; Fan, Hongyuan; Pan, Dong

2018-05-01

The low-temperature liquid nitriding of stainless steels can result in the formation of a surface zone of so-called expanded austenite (S-phase) by the dissolution of large amounts of nitrogen in the solid solution and formation of a precipitate-free layer supersaturated with high hardness. Erosion-corrosion measurements were performed on low-temperature nitrided and non-nitrided 316L stainless steels. The total erosion-corrosion, erosion-only, and corrosion-only wastages were measured directly. As expected, it was shown that low-temperature nitriding dramatically reduces the degree of erosion-corrosion in stainless steels, caused by the impingement of particles in a corrosive medium. The nitrided 316L stainless steels exhibited an improvement of almost 84% in the erosion-corrosion resistance compared to their non-nitrided counterparts. The erosion-only rates and synergistic levels showed a general decline after low-temperature nitriding. Low-temperature liquid nitriding can not only reduce the weight loss due to erosion but also significantly reduce the weight loss rate of interactions, so that the total loss of material decreased evidently. Therefore, 316L stainless steels displayed excellent erosion-corrosion behaviors as a consequence of their highly favorable corrosion resistances and superior wear properties.

Rational design of metal nitride redox materials for solar-driven ammonia synthesis.

PubMed

Michalsky, Ronald; Pfromm, Peter H; Steinfeld, Aldo

2015-06-06

Fixed nitrogen is an essential chemical building block for plant and animal protein, which makes ammonia (NH3) a central component of synthetic fertilizer for the global production of food and biofuels. A global project on artificial photosynthesis may foster the development of production technologies for renewable NH3 fertilizer, hydrogen carrier and combustion fuel. This article presents an alternative path for the production of NH3 from nitrogen, water and solar energy. The process is based on a thermochemical redox cycle driven by concentrated solar process heat at 700-1200°C that yields NH3 via the oxidation of a metal nitride with water. The metal nitride is recycled via solar-driven reduction of the oxidized redox material with nitrogen at atmospheric pressure. We employ electronic structure theory for the rational high-throughput design of novel metal nitride redox materials and to show how transition-metal doping controls the formation and consumption of nitrogen vacancies in metal nitrides. We confirm experimentally that iron doping of manganese nitride increases the concentration of nitrogen vacancies compared with no doping. The experiments are rationalized through the average energy of the dopant d-states, a descriptor for the theory-based design of advanced metal nitride redox materials to produce sustainable solar thermochemical ammonia.

Rational design of metal nitride redox materials for solar-driven ammonia synthesis

PubMed Central

Michalsky, Ronald; Pfromm, Peter H.; Steinfeld, Aldo

2015-01-01

Fixed nitrogen is an essential chemical building block for plant and animal protein, which makes ammonia (NH3) a central component of synthetic fertilizer for the global production of food and biofuels. A global project on artificial photosynthesis may foster the development of production technologies for renewable NH3 fertilizer, hydrogen carrier and combustion fuel. This article presents an alternative path for the production of NH3 from nitrogen, water and solar energy. The process is based on a thermochemical redox cycle driven by concentrated solar process heat at 700–1200°C that yields NH3 via the oxidation of a metal nitride with water. The metal nitride is recycled via solar-driven reduction of the oxidized redox material with nitrogen at atmospheric pressure. We employ electronic structure theory for the rational high-throughput design of novel metal nitride redox materials and to show how transition-metal doping controls the formation and consumption of nitrogen vacancies in metal nitrides. We confirm experimentally that iron doping of manganese nitride increases the concentration of nitrogen vacancies compared with no doping. The experiments are rationalized through the average energy of the dopant d-states, a descriptor for the theory-based design of advanced metal nitride redox materials to produce sustainable solar thermochemical ammonia. PMID:26052421

Nanoscale tissue engineering: spatial control over cell-materials interactions

PubMed Central

Wheeldon, Ian; Farhadi, Arash; Bick, Alexander G.; Jabbari, Esmaiel; Khademhosseini, Ali

2011-01-01

Cells interact with the surrounding environment by making tens to hundreds of thousands of nanoscale interactions with extracellular signals and features. The goal of nanoscale tissue engineering is to harness the interactions through nanoscale biomaterials engineering in order to study and direct cellular behaviors. Here, we review the nanoscale tissue engineering technologies for both two- and three-dimensional studies (2- and 3D), and provide a holistic overview of the field. Techniques that can control the average spacing and clustering of cell adhesion ligands are well established and have been highly successful in describing cell adhesion and migration in 2D. Extension of these engineering tools to 3D biomaterials has created many new hydrogel and nanofiber scaffolds technologies that are being used to design in vitro experiments with more physiologically relevant conditions. Researchers are beginning to study complex cell functions in 3D, however, there is a need for biomaterials systems that provide fine control over the nanoscale presentation of bioactive ligands in 3D. Additionally, there is a need for 2- and 3D techniques that can control the nanoscale presentation of multiple bioactive ligands and the temporal changes in cellular microenvironment. PMID:21451238

Corrosion of Ceramic Materials

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Jacobson, Nathan S.

1999-01-01

Non-oxide ceramics are promising materials for a range of high temperature applications. Selected current and future applications are listed. In all such applications, the ceramics are exposed to high temperature gases. Therefore it is critical to understand the response of these materials to their environment. The variables to be considered here include both the type of ceramic and the environment to which it is exposed. Non-oxide ceramics include borides, nitrides, and carbides. Most high temperature corrosion environments contain oxygen and hence the emphasis of this chapter will be on oxidation processes.

Thermodynamic analysis of chemical compatibility of several compounds with Fe-Cr-Al alloys

NASA Technical Reports Server (NTRS)

Misra, Ajay K.

1993-01-01

Chemical compatibility between Fe-19.8Cr-4.8Al (weight percent), which is the base composition for the commercial superalloy MA956, and several carbides, borides, nitrides, oxides, and silicides was analyzed from thermodynamic considerations. The effect of addition of minor alloying elements, such as Ti, Y, and Y2O3, to the Fe-Cr-Al alloy on chemical compatibility between the alloy and various compounds was also analyzed. Several chemically compatible compounds that can be potential reinforcement materials and/or interface coating materials for Fe-Cr-Al based composites were identified.

Silicon nitride equation of state

NASA Astrophysics Data System (ADS)

Brown, Robert C.; Swaminathan, Pazhayannur K.

2017-01-01

This report presents the development of a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4).1 Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonal β-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data that have indicated a complex and slow time dependent phase change to the c-Si3N4 phase. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products; however, the need for a kinetic approach is suggested to combine with the single component solid models to simulate and further investigate the global phase coexistences.

Synthesis of rhenium nitride crystals with MoS2 structure

NASA Astrophysics Data System (ADS)

Kawamura, Fumio; Yusa, Hitoshi; Taniguchi, Takashi

2012-06-01

Rhenium nitride (ReN2) crystals were synthesized from a metathesis reaction between ReCl5 and Li3N under high pressure. The reaction was well controlled by the addition of a large amount of NaCl as reaction inhibitor to prevent a violent exothermic reaction. The largest rhenium nitride crystals obtained had a millimeter-order size with a platelet shape. X-ray diffraction analysis revealed that rhenium nitride has MoS2 structure similar to hexagonal rhenium diboride (ReB2) which has recently been investigated as an ultra-hard material. The structure was different from any structures previously predicted for ReN2 by theoretical calculations.

On the buckling of hexagonal boron nitride nanoribbons via structural mechanics

NASA Astrophysics Data System (ADS)

Giannopoulos, Georgios I.

2018-03-01

Monolayer hexagonal boron nitride nanoribbons have similar crystal structure as graphene nanoribbons, have excellent mechanical, thermal insulating and dielectric properties and additionally present chemical stability. These allotropes of boron nitride can be used in novel applications, in which graphene is not compatible, to achieve remarkable performance. The purpose of the present work is to provide theoretical estimations regarding the buckling response of hexagonal boron nitride monolayer under compressive axial loadings. For this reason, a structural mechanics method is formulated which employs the exact equilibrium atomistic structure of the specific two-dimensional nanomaterial. In order to represent the interatomic interactions appearing between boron and nitrogen atoms, the Dreiding potential model is adopted which is realized by the use of three-dimensional, two-noded, spring-like finite elements of appropriate stiffness matrices. The critical compressive loads that cause the buckling of hexagonal boron nitride nanoribbons are computed with respect to their size and chirality while some indicative buckled shapes of them are illustrated. Important conclusions arise regarding the effect of the size and chirality on the structural stability of the hexagonal boron nitride monolayers. An analytical buckling formula, which provides good fitting of the numerical outcome, is proposed.

Waste conversion into high-value ceramics: Carbothermal nitridation synthesis of titanium nitride nanoparticles using automotive shredder waste.

PubMed

Mayyas, Mohannad; Pahlevani, Farshid; Maroufi, Samane; Liu, Zhao; Sahajwalla, Veena

2017-03-01

Environmental concern about automotive shredder residue (ASR) has increased in recent years due to its harmful content of heavy metals. Although several approaches of ASR management have been suggested, these approaches remain commercially unproven. This study presents an alternative approach for ASR management where advanced materials can be generated as a by-product. In this approach, titanium nitride (TiN) has been thermally synthesized by nitriding pressed mixture of automotive shredder residue (ASR) and titanium oxide (TiO 2 ). Interactions between TiO 2 and ASR at non-isothermal conditions were primarily investigated using thermogravimetric analysis (TGA) and differential scanning calorimetry. Results indicated that TiO 2 influences and catalyses degradation reactions of ASR, and the temperature, at which reduction starts, was determined around 980 °C. The interaction between TiO 2 and ASR at isothermal conditions in the temperature range between 1200 and 1550 °C was also studied. The pressed mixture of both materials resulted in titanium nitride (TiN) ceramic at all given temperatures. Formation kinetics were extracted using several models for product layer diffusion-controlled solid-solid and solid-fluid reactions. The effect of reactants ratio and temperature on the degree of conversion and morphology was investigated. The effect of reactants ratio was found to have considerable effect on the morphology of the resulting material, while temperature had a lesser impact. Several unique structures of TiN (porous nanostructured, polycrystalline, micro-spherical and nano-sized structures) were obtained by simply tuning the ratio of TiO 2 to ASR, and a product with appreciable TiN content of around 85% was achieved after only one hour nitridation at 1550 °C. Copyright © 2016 Elsevier Ltd. All rights reserved.

Development of silicon nitride of improved toughness

NASA Technical Reports Server (NTRS)

Brennan, J. J.

1979-01-01

The application of reaction sintered Si2N4 energy absorbing surface layers to hot-pressed Si3N4 was investigated. The surface layer was formed by in-place nitridation of silicon powder. It was found that reaction sintered Si3N4 layers of 1 mm thickness, fabricated from either -100, +200, -200, or -325 mesh Si powder and nitrided in 96% N2/4% H2 so that approximately 20-25 vol % unnitrided Si remained in the layer, resulted in a sevenfold increase in ballistic impact resistance of a 0.64 cm thick hot-pressed SI3N4 substrate from RT 1370 C. Both NC-132 SI3N4, with MgO additive, and NCX-34 Si3N4, with Y2O3 additive, were evaluated as substrate material. The finer grain size -200 and -325 mesh nitrided Si layers were for their smoothness and relatively high density. It was found that nitriding in N2/H2 mixtures, rather than pure N2, resulted in a microstructure that did not substantially degrade the strength of the hot-pressed Si3N4 substrate. Thermal cycling tests on the RSSN/HPSN combinations from 200 C to 1370 C for 75 cycles in air did not degrade the impact resistance nor the interfacial bonding, although a large amount of internal silica formation occurred within the RSSN layer. Mach 0.8, 5 hr, hot gas erosion tests showed no surface recession of RSSN layers at 1200 C and slight surface recession at 1370 C.

Surface Texturing-Plasma Nitriding Duplex Treatment for Improving Tribological Performance of AISI 316 Stainless Steel

PubMed Central

Lin, Naiming; Liu, Qiang; Zou, Jiaojuan; Guo, Junwen; Li, Dali; Yuan, Shuo; Ma, Yong; Wang, Zhenxia; Wang, Zhihua; Tang, Bin

2016-01-01

Surface texturing-plasma nitriding duplex treatment was conducted on AISI 316 stainless steel to improve its tribological performance. Tribological behaviors of ground 316 substrates, plasma-nitrided 316 (PN-316), surface-textured 316 (ST-316), and duplex-treated 316 (DT-316) in air and under grease lubrication were investigated using a pin-on-disc rotary tribometer against counterparts of high carbon chromium bearing steel GCr15 and silicon nitride Si3N4 balls. The variations in friction coefficient, mass loss, and worn trace morphology of the tested samples were systemically investigated and analyzed. The results showed that a textured surface was formed on 316 after electrochemical processing in a 15 wt % NaCl solution. Grooves and dimples were found on the textured surface. As plasma nitriding was conducted on a 316 substrate and ST-316, continuous and uniform nitriding layers were successfully fabricated on the surfaces of the 316 substrate and ST-316. Both of the obtained nitriding layers presented thickness values of more than 30 μm. The nitriding layers were composed of iron nitrides and chromium nitride. The 316 substrate and ST-316 received improved surface hardness after plasma nitriding. When the tribological tests were carried out under dry sliding and grease lubrication conditions, the tested samples showed different tribological behaviors. As expected, the DT-316 samples revealed the most promising tribological properties, reflected by the lowest mass loss and worn morphologies. The DT-316 received the slightest damage, and its excellent tribological performance was attributed to the following aspects: firstly, the nitriding layer had high surface hardness; secondly, the surface texture was able to capture wear debris, store up grease, and then provide continuous lubrication. PMID:28773996

PHYSICAL PROPERTIES OF ZIRCONIUM NITRIDE IN THE HOMOGENEITY REGION (in Ukrainian)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samsonov, G.V.; Verkhoglyadova, T.S.

1962-01-01

The x-ray method was used to determine the homogeneity region of zirconium nitride as 40 to 50 at.% (9.5 to 13.3% by weight) of nitrogen. It is also shown that part of the ionic bond in the zirconium nitride lattice increases with a decrease in the nitrogen content in this region, this increase being higher than in the homogeneity region of titunium nitride due to the smaller degree of unfilling of the electron d-shell of the zirconium atom in comparison with that of the titanium atom. (auth)

Crystallization of the glassy grain boundary phase in silicon nitride ceramics

NASA Technical Reports Server (NTRS)

Drummond, Charles H., III

1991-01-01

The role was studied of the intergranular glassy phase in silicon nitride as-processed with yttria as a sintering aid. The microstructure, crystallization, and viscosity of the glassy phase were areas studied. Crystallization of the intergranular glassy phase to more refractory crystalline phases should improve the high temperature mechanical properties of the silicon nitride. The addition of a nucleating agent will increase the rate of crystallization. The measurement of the viscosity of the glassy phase will permit the estimation of the high temperature deformation of the silicon nitride.

Viscoelastic Behavior of PDMS Filled with Boron Nitrides

NASA Astrophysics Data System (ADS)

Bian, J. F.; Weinkauf, D. H.; Jeon, H. S.

2004-03-01

The addition of high thermal conductive filler particles such as boron nitride, aluminum nitride, or carbon fiber is an effective way to increase the thermal conductivity of polymeric materials for the industrial applications such as electronic packaging materials, encapsulants, and thermal fluids among others. The effects of particle dispersions, concentrations, and the interactions between BN and polymer matrix on the viscoelastic properties of the boron nitride (BN)/polydimethylsiloxane (PDMS) composites prepared by mechanical mixing are investigated using oscillatory shear rheology. Both untreated and plasma treated boron nitride (BNP) particles with hexafluoropropylene oxide monomers have been used in this study. The addition of the plasma treated BN particles to the PDMS matrix decrease significantly the complex viscosity as well as storage and loss modulus of the composites due to the reduced interfacial energy between the surface of BNP and PDMS chains. For the PDMS/BN and PDMS/BNP composites, the maximum volume packing fraction ( ˜0.4) of the particles has been determined from the complex viscosity as a function of the frequency. Additionally, the shear-induced alignment of the BN particles dispersed in the PDMS matrix decreases the viscoelastic properties of the composites with the irregular oscillations which is related to the network formation of dispersed BN particles at the higher volume fractions (> ˜0.2).

Traceable nanoscale measurement at NML-SIRIM

NASA Astrophysics Data System (ADS)

Dahlan, Ahmad M.; Abdul Hapip, A. I.

2012-06-01

The role of national metrology institute (NMI) has always been very crucial in national technology development. One of the key activities of the NMI is to provide traceable measurement in all parameters under the International System of Units (SI). Dimensional measurement where size and shape are two important features investigated, is one of the important area covered by NMIs. To support the national technology development, particularly in manufacturing sectors and emerging technology such nanotechnology, the National Metrology Laboratory, SIRIM Berhad (NML-SIRIM), has embarked on a project to equip Malaysia with state-of-the-art nanoscale measurement facility with the aims of providing traceability of measurement at nanoscale. This paper will look into some of the results from current activities at NML-SIRIM related to measurement at nanoscale particularly on application of atomic force microscope (AFM) and laser based sensor in dimensional measurement. Step height standards of different sizes were measured using AFM and laser-based sensors. These probes are integrated into a long-range nanoscale measuring machine traceable to the international definition of the meter thus ensuring their traceability. Consistency of results obtained by these two methods will be discussed and presented. Factors affecting their measurements as well as their related uncertainty of measurements will also be presented.

Neuromorphic computing with nanoscale spintronic oscillators.

PubMed

Torrejon, Jacob; Riou, Mathieu; Araujo, Flavio Abreu; Tsunegi, Sumito; Khalsa, Guru; Querlioz, Damien; Bortolotti, Paolo; Cros, Vincent; Yakushiji, Kay; Fukushima, Akio; Kubota, Hitoshi; Yuasa, Shinji; Stiles, Mark D; Grollier, Julie

2017-07-26

Neurons in the brain behave as nonlinear oscillators, which develop rhythmic activity and interact to process information. Taking inspiration from this behaviour to realize high-density, low-power neuromorphic computing will require very large numbers of nanoscale nonlinear oscillators. A simple estimation indicates that to fit 10 8 oscillators organized in a two-dimensional array inside a chip the size of a thumb, the lateral dimension of each oscillator must be smaller than one micrometre. However, nanoscale devices tend to be noisy and to lack the stability that is required to process data in a reliable way. For this reason, despite multiple theoretical proposals and several candidates, including memristive and superconducting oscillators, a proof of concept of neuromorphic computing using nanoscale oscillators has yet to be demonstrated. Here we show experimentally that a nanoscale spintronic oscillator (a magnetic tunnel junction) can be used to achieve spoken-digit recognition with an accuracy similar to that of state-of-the-art neural networks. We also determine the regime of magnetization dynamics that leads to the greatest performance. These results, combined with the ability of the spintronic oscillators to interact with each other, and their long lifetime and low energy consumption, open up a path to fast, parallel, on-chip computation based on networks of oscillators.

Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

DOEpatents

Lowden, R.A.

1994-04-05

A process for chemical vapor deposition of crystalline silicon nitride is described which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide. 5 figures.

Hydrolytic Unzipping of Boron Nitride Nanotubes in Nitric Acid.

PubMed

Kim, Dukeun; Muramatsu, Hiroyuki; Kim, Yoong Ahm

2017-12-01

Boron nitride nanoribbons (BNNRs) have very attractive electrical and optical properties due to their unique edge states and width-related properties. Herein, for the first time, BNNRs were produced by a simple reflux of boron nitride nanotubes (BNNTs) in nitric acid containing water, which had led to unzipped sidewalls through hydrolysis. Their high reactivity that originated from edges was verified via a strong interaction with methylene blue.

As-Grown Gallium Nitride Nanowire Electromechanical Resonators

NASA Astrophysics Data System (ADS)

Montague, Joshua R.

Technological development in recent years has led to a ubiquity of micro- and nano-scale electromechanical devices. Sensors for monitoring temperature, pressure, mass, etc., are now found in nearly all electronic devices at both the industrial and consumer levels. As has been true for integrated circuit electronics, these electromechanical devices have continued to be scaled down in size. For many nanometer-scale structures with large surface-to-volume ratio, dissipation (energy loss) becomes prohibitively large causing a decreasing sensitivity with decreasing sensor size. In this work, gallium nitride (GaN) nanowires are investigated as singly-clamped (cantilever) mechanical resonators with typical mechanical quality factors, Q (equal to the ratio of resonance frequency to peak full-width-at-half-maximum-power) and resonance frequencies, respectively, at or above 30,000, and near 1 MHz. These Q values---in vacuum at room temperature---indicate very low levels of dissipation; they are essentially the same as those for bulk quartz crystal resonators that form the basis of simple clocks and mass sensors. The GaN nanowires have lengths and diameters, respectively, of approximately 15 micrometers and hundreds of nanometers. As-grown GaN nanowire Q values are larger than other similarly-sized, bottom-up, cantilever resonators and this property makes them very attractive for use as resonant sensors. We demonstrate the capability of detecting sub-monolayer levels of atomic layer deposited (ALD) films, and the robust nature of the GaN nanowires structure that allows for their 'reuse' after removal of such layers. In addition to electron microscope-based measurement techniques, we demonstrate the successful capacitive detection of a single nanowire using microwave homodyne reflectometry. This technique is then extended to allow for simultaneous measurements of large ensembles of GaN nanowires on a single sample, providing statistical information about the distribution of

Validity of "sputtering and re-condensation" model in active screen cage plasma nitriding process

NASA Astrophysics Data System (ADS)

Saeed, A.; Khan, A. W.; Jan, F.; Abrar, M.; Khalid, M.; Zakaullah, M.

2013-05-01

The validity of "sputtering and re-condensation" model in active screen plasma nitriding for nitrogen mass transfer mechanism is investigated. The dominant species including NH, Fe-I, N2+, N-I and N2 along with Hα and Hβ lines are observed in the optical emission spectroscopy (OES) analysis. Active screen cage and dc plasma nitriding of AISI 316 stainless steel as function of treatment time is also investigated. The structure and phases composition of the nitrided layer is studied by X-ray diffraction (XRD). Surface morphology is studied by scanning electron microscopy (SEM) and hardness profile is obtained by Vicker's microhardness tester. Increasing trend in microhardness is observed in both cases but the increase in active screen plasma nitriding is about 3 times greater than that achieved by dc plasma nitriding. On the basis of metallurgical and OES observations the use of "sputtering and re-condensation" model in active screen plasma nitriding is tested.

Bench-scale synthesis of nanoscale materials

NASA Technical Reports Server (NTRS)

Buehler, M. F.; Darab, J. G.; Matson, D. W.; Linehan, J. C.

1994-01-01

A novel flow-through hydrothermal method used to synthesize nanoscale powders is introduced by Pacific Northwest Laboratory. The process, Rapid Thermal Decomposition of precursors in Solution (RTDS), uniquely combines high-pressure and high-temperature conditions to rapidly form nanoscale particles. The RTDS process was initially demonstrated on a laboratory scale and was subsequently scaled up to accommodate production rates attractive to industry. The process is able to produce a wide variety of metal oxides and oxyhydroxides. The powders are characterized by scanning and transmission electron microscopic methods, surface-area measurements, and x-ray diffraction. Typical crystallite sizes are less than 20 nanometers, with BET surface areas ranging from 100 to 400 sq m/g. A description of the RTDS process is presented along with powder characterization results. In addition, data on the sintering of nanoscale ZrO2 produced by RTDS are included.

Laser Beam Welding of Nitride Steel Components

NASA Astrophysics Data System (ADS)

Gu, Hongping; Yin, Guobin; Shulkin, Boris

Laser beam welding is a joining technique that has many advantages over conventional GMAW welding, such as low heat input, short cycle time as well as good cosmetic welds. Laser beam welding has been widely used for welding powertrain components in automotive industry. When welding nitride steel components, however, laser beam welding faces a great challenge. The difficulty lies in the fact that the nitride layer in the joint releases the nitrogen into the weld pool, resulting in a porous weld. This research presents an industrial ready solution to prevent the nitrogen from forming gas bubbles in the weld.

Polymeric carbon nitride for solar hydrogen production.

PubMed

Li, Xiaobo; Masters, Anthony F; Maschmeyer, Thomas

2017-07-04

If solar hydrogen production from water is to be a realistic candidate for industrial hydrogen production, the development of photocatalysts, which avoid the use of expensive and/or toxic elements is highly desirable from a scalability, cost and environmental perspective. Metal-free polymeric carbon nitride is an attractive material that can absorb visible light and produce hydrogen from water. This article reviews recent developments in polymeric carbon nitride as used in photocatalysis and then develops the discussion focusing on the three primary processes of a photocatalytic reaction: light-harvesting, carrier generation/separation/transportation and surface reactions.

Infrared absorption spectra of metal carbides, nitrides and sulfides

NASA Technical Reports Server (NTRS)

Kammori, O.; Sato, K.; Kurosawa, F.

1981-01-01

The infrared absorption spectra of 12 kinds of metal carbides, 11 kinds of nitrides, and 7 kinds of sulfides, a total of 30 materials, were measured and the application of the infrared spectra of these materials to analytical chemistry was discussed. The measurements were done in the frequency (wave length) range of (1400 to 400/cm (7 to 25 mu). The carbides Al4C3, B4C, the nitrides AlN, BN, Si3N4, WB, and the sulfides Al2S3, FeS2, MnS, NiS and PbS were noted to have specific absorptions in the measured region. The sensitivity of Boron nitride was especially good and could be detected at 2 to 3 micrograms in 300 mg of potassium bromide.

Effects of the Process Parameters on the Microstructure and Properties of Nitrided 17-4PH Stainless Steel

NASA Astrophysics Data System (ADS)

Wang, Jun; Lin, Yuanhua; Zeng, Dezhi; Yan, Jing; Fan, Hongyuan

2013-04-01

The effects of process parameters on the microstructure, microhardness, and dry-sliding wear behavior of plasma nitrided 17-4PH stainless steel were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and wear testing. The results show that a wear-resistant nitrided layer was formed on the surface of direct current plasma nitrided 17-4PH martensitic stainless steel. The microstructure and thickness of the nitrided layer is dependent on the treatment temperature rather than process pressure. XRD indicated that a single α N phase was formed during nitriding at 623 K (350 °C). When the temperature increased, the α N phase disappeared and CrN transformed in the nitrided layer. The hardness measurement demonstrated that the hardness of the stainless substrate steel increased from 320 HV0.1 in the untreated condition increasing to about 1275HV0.1 after nitriding 623 K (350 °C)/600 pa/4 hours. The extremely high values of the microhardness achieved by the great misfit-induced stress fields associated with the plenty of dislocation group and stacking fault. Dry-sliding wear resistance was improved by DC plasma nitriding. The best wear-resistance performance of a nitrided sample was obtained after nitriding at 673 K (350 °C), when the single α N-phase was produced and there were no CrN precipitates in the nitrided layer.

Colloidal characterization of silicon nitride and silicon carbide

NASA Technical Reports Server (NTRS)

Feke, Donald L.

1986-01-01

The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

Zinc nitride thin films: basic properties and applications

NASA Astrophysics Data System (ADS)

Redondo-Cubero, A.; Gómez-Castaño, M.; García Núñez, C.; Domínguez, M.; Vázquez, L.; Pau, J. L.

2017-02-01

Zinc nitride films can be deposited by radio frequency magnetron sputtering using a Zn target at substrate temperatures lower than 250°C. This low deposition temperature makes the material compatible with flexible substrates. The asgrown layers present a black color, polycrystalline structures, large conductivities, and large visible light absorption. Different studies have reported about the severe oxidation of the layers in ambient conditions. Different compositional, structural and optical characterization techniques have shown that the films turn into ZnO polycrystalline layers, showing visible transparency and semi-insulating properties after total transformation. The oxidation rate is fairly constant as a function of time and depends on environmental parameters such as relative humidity or temperature. Taking advantage of those properties, potential applications of zinc nitride films in environmental sensing have been studied in the recent years. This work reviews the state-of-the-art of the zinc nitride technology and the development of several devices such as humidity indicators, thin film (photo)transistors and sweat monitoring sensors.

Single walled boron nitride nanotube-based biosensor: an atomistic finite element modelling approach.

PubMed

Panchal, Mitesh B; Upadhyay, Sanjay H

2014-09-01

The unprecedented dynamic characteristics of nanoelectromechanical systems make them suitable for nanoscale mass sensing applications. Owing to superior biocompatibility, boron nitride nanotubes (BNNTs) are being increasingly used for such applications. In this study, the feasibility of single walled BNNT (SWBNNT)-based bio-sensor has been explored. Molecular structural mechanics-based finite element (FE) modelling approach has been used to analyse the dynamic behaviour of SWBNNT-based biosensors. The application of an SWBNNT-based mass sensing for zeptogram level of mass has been reported. Also, the effect of size of the nanotube in terms of length as well as different chiral atomic structures of SWBNNT has been analysed for their sensitivity analysis. The vibrational behaviour of SWBNNT has been analysed for higher-order modes of vibrations to identify the intermediate landing position of biological object of zeptogram scale. The present molecular structural mechanics-based FE modelling approach is found to be very effectual to incorporate different chiralities of the atomic structures. Also, different boundary conditions can be effectively simulated using the present approach to analyse the dynamic behaviour of the SWBNNT-based mass sensor. The presented study has explored the potential of SWBNNT, as a nanobiosensor having the capability of zeptogram level mass sensing.

Reduction of Defects on Microstructure Aluminium Nitride Using High Temperature Annealing Heat Treatment

NASA Astrophysics Data System (ADS)

Tanasta, Z.; Muhamad, P.; Kuwano, N.; Norfazrina, H. M. Y.; Unuh, M. H.

2018-03-01

Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 °C. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem.

Formation of porous surface layers in reaction bonded silicon nitride during processing

NASA Technical Reports Server (NTRS)

Shaw, N. J.; Glasgow, T. K.

1979-01-01

An effort was undertaken to determine if the formation of the generally observed layer of large porosity adjacent to the as-nitride surfaces of reaction bonded silicon nitrides could be prevented during processing. Isostatically pressed test bars were prepared from wet vibratory milled Si powder. Sintering and nitriding were each done under three different conditions:(1) bars directly exposed to the furnance atmosphere; (2) bars packed in Si powder; (3) bars packed in Si3N4 powder. Packing the bars in either Si of Si3N4 powder during sintering retarded formation of the layer of large porosity. Only packing the bars in Si prevented formation of the layer during nitridation. The strongest bars (316 MPa) were those sintered in Si and nitrided in Si3N4 despite their having a layer of large surface porosity; failure initiated at very large pores and inclusions. The alpha/beta ratio was found to be directly proportional to the oxygen content; a possible explanation for this relationship is discussed.

Growth of single-layer boron nitride dome-shaped nanostructures catalysed by iron clusters.

PubMed

Torre, A La; Åhlgren, E H; Fay, M W; Ben Romdhane, F; Skowron, S T; Parmenter, C; Davies, A J; Jouhannaud, J; Pourroy, G; Khlobystov, A N; Brown, P D; Besley, E; Banhart, F

2016-08-11

We report on the growth and formation of single-layer boron nitride dome-shaped nanostructures mediated by small iron clusters located on flakes of hexagonal boron nitride. The nanostructures were synthesized in situ at high temperature inside a transmission electron microscope while the e-beam was blanked. The formation process, typically originating at defective step-edges on the boron nitride support, was investigated using a combination of transmission electron microscopy, electron energy loss spectroscopy and computational modelling. Computational modelling showed that the domes exhibit a nanotube-like structure with flat circular caps and that their stability was comparable to that of a single boron nitride layer.

Wafer-Scale and Wrinkle-Free Epitaxial Growth of Single-Orientated Multilayer Hexagonal Boron Nitride on Sapphire.

PubMed

Jang, A-Rang; Hong, Seokmo; Hyun, Chohee; Yoon, Seong In; Kim, Gwangwoo; Jeong, Hu Young; Shin, Tae Joo; Park, Sung O; Wong, Kester; Kwak, Sang Kyu; Park, Noejung; Yu, Kwangnam; Choi, Eunjip; Mishchenko, Artem; Withers, Freddie; Novoselov, Kostya S; Lim, Hyunseob; Shin, Hyeon Suk

2016-05-11

Large-scale growth of high-quality hexagonal boron nitride has been a challenge in two-dimensional-material-based electronics. Herein, we present wafer-scale and wrinkle-free epitaxial growth of multilayer hexagonal boron nitride on a sapphire substrate by using high-temperature and low-pressure chemical vapor deposition. Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized hexagonal boron nitride has a single rotational orientation with AA' stacking order. A facile method for transferring hexagonal boron nitride onto other target substrates was developed, which provides the opportunity for using hexagonal boron nitride as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our hexagonal boron nitride sheets shows clear quantum oscillation and highly improved carrier mobility because the ultraflatness of the hexagonal boron nitride surface can reduce the substrate-induced degradation of the carrier mobility of two-dimensional materials.

Molybdenum nitrides as oxygen reduction reaction catalysts: Structural and electrochemical studies

DOE PAGES

Cao, Bingfei; Neuefeind, Joerg C.; Adzic, Radoslav R.; ...

2015-02-09

Monometallic (δ-MoN, Mo 5N 6, and Mo 2N) and bimetallic molybdenum nitrides (Co 0.6Mo 1.4N 2) were investigated as electrocatalysts for the oxygen reduction reaction (ORR), which is a key half-reaction in hydrogen fuel cells. Monometallic hexagonal molybdenum nitrides are found to exhibit improved activities over rock salt type molybdenum nitride (γ-Mo 2N), suggesting that improvements are due to either the higher molybdenum valence or a more favorable coordination environment in the hexagonal structures. Further enhancements in activity were found for hexagonal bimetallic cobalt molybdenum nitride (Co 0.6Mo 1.4N 2), resulting in a modest onset potential of 0.713 V versusmore » reversible hydrogen electrode (RHE). Co 0.6Mo 1.4N 2 exhibits good stability in acidic environments, and in the potential range lower than 0.5 V versus RHE, the ORR appears to proceed via a four-electron mechanism based on the analysis of rotating disc electrode results. A redetermination of the structures of the binary molybdenum nitrides was carried out using neutron diffraction data, which is far more sensitive to nitrogen site positions than X-ray diffraction data. In conclusion, the revised monometallic hexagonal nitride structures all share many common features with the Co 0.6Mo 1.4N 2 structure, which has alternating layers of cations in octahedral and trigonal prismatic coordination, and are thus not limited to only trigonal prismatic Mo environments (as was originally postulated for δ-MoN).« less

Single photon emitters in boron nitride: More than a supplementary material

NASA Astrophysics Data System (ADS)

Koperski, M.; Nogajewski, K.; Potemski, M.

2018-03-01

We present comprehensive optical studies of recently discovered single photon sources in boron nitride, which appear in form of narrow lines emitting centres. Here, we aim to compactly characterise their basic optical properties, including the demonstration of several novel findings, in order to inspire discussion about their origin and utility. Initial inspection reveals the presence of narrow emission lines in boron nitride powder and exfoliated flakes of hexagonal boron nitride deposited on Si/SiO2 substrates. Generally rather stable, the boron nitride emitters constitute a good quality visible light source. However, as briefly discussed, certain specimens reveal a peculiar type of blinking effects, which are likely related to existence of meta-stable electronic states. More advanced characterisation of representative stable emitting centres uncovers a strong dependence of the emission intensity on the energy and polarisation of excitation. On this basis, we speculate that rather strict excitation selectivity is an important factor determining the character of the emission spectra, which allows the observation of single and well-isolated emitters. Finally, we investigate the properties of the emitting centres in varying external conditions. Quite surprisingly, it is found that the application of a magnetic field introduces no change in the emission spectra of boron nitride emitters. Further analysis of the impact of temperature on the emission spectra and the features seen in second-order correlation functions is used to provide an assessment of the potential functionality of boron nitride emitters as single photon sources capable of room temperature operation.

Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications

DOEpatents

Hui, Rongqing [Lenexa, KS; Jiang, Hong-Xing [Manhattan, KS; Lin, Jing-Yu [Manhattan, KS

2008-03-18

The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.

Sulfide Stress Cracking and Electrochemical Corrosion of Precipitation Hardening Steel After Plasma Oxy-Nitriding

NASA Astrophysics Data System (ADS)

Granda-Gutiérrez, E. E.; Díaz-Guillén, J. C.; Díaz-Guillén, J. A.; González, M. A.; García-Vázquez, F.; Muñóz, R.

2014-11-01

In this paper, we present the results of a duplex plasma nitriding followed by an oxidizing stage process (which is also referred as oxy-nitriding) on the corrosion behavior of a 17-4PH precipitation hardening stainless steel. The formation of both, expanded martensite (b.c.t. α'N-phase) and chromium oxide (type Cr2O3) in the subsurface of oxy-nitrided samples at specific controlled conditions, leads in a noticeable increasing in the time-to-rupture during the sulfide stress cracking test, in comparison with an untreated reference sample. Oxy-nitriding improves the corrosion performance of the alloy when it is immersed in solutions saturated by sour gas, which extends the application potential of this type of steel in the oil and gas extraction and processing industry. The presence of the oxy-nitrided layer inhibits the corrosion process that occurs in the near-surface region, where hydrogen is liberated after the formation of iron sulfides, which finally produces a fragile fracture by micro-crack propagation; the obtained results suggest that oxy-nitriding slows this process, thus delaying the rupture of the specimen. Moreover, oxy-nitriding produces a hard, sour gas-resistant surface, but do not significantly affect the original chloride ion solution resistance of the material.

Process for making boron nitride using sodium cyanide and boron

DOEpatents

Bamberger, Carlos E.

1990-02-06

This a very simple process for making boron nitride by mixing sodium cyanide and boron phosphate and heating the mixture in an inert atmosphere until a reaction takes place. The product is a white powder of boron nitride that can be used in applications that require compounds that are stable at high temperatures and that exhibit high electrical resistance.

Process for making boron nitride using sodium cyanide and boron

DOEpatents

Bamberger, Carlos E.

1990-01-01

This a very simple process for making boron nitride by mixing sodium cyanide and boron phosphate and heating the mixture in an inert atmosphere until a reaction takes place. The product is a white powder of boron nitride that can be used in applications that require compounds that are stable at high temperatures and that exhibit high electrical resistance.

The structure and function of supported molybdenum nitride and molybdenum carbide hydrotreating catalysts

NASA Astrophysics Data System (ADS)

Dolce, Gregory Martin

1997-11-01

A series of gamma-Alsb2Osb3 supported molybdenum nitrides and carbides were prepared by the temperature programmed reaction of supported molybdates with ammonia and methane/hydrogen mixtures, respectively. In the first part of this research, the effects of synthesis heating rates and molybdenum loading on the catalytic properties of the materials were examined. A significant amount of excess carbon was deposited on the surface of the carbides during synthesis. The materials consisted of small particles which were very highly dispersed. Oxygen chemisorption indicated that the nitride particles may have been two-dimensional. The dispersion of the carbides, however, appeared to decrease as the loading increased. The catalysts were evaluated for hydrodenitrogenation (HDN), hydrodesulfurization (HDS), and hydrodeoxygenation (HDO). The molybdenum loading had the largest effect on the activity of the materials. For the nitrides, the HDN and HDS activities were inverse functions of the loading. This suggested that the most active HDN and HDS sites were located at the perimeter of the two-dimensional particles. The HDN and HDS activities of the carbides followed the same trend as the oxygen uptake. This result suggested that oxygen titrated the active sites on the supported carbides. Selected catalysts were evaluated for methylcarbazole HDN, dibenzothiophene HDS, and dibenzofuran HDO. The activity and selectivity of the nitrides and carbides were competitive with a presulfided commercial catalyst. In the second part of this work, a series of supported nitrides and carbides were prepared using a wider range of loadings (5-30 wt% Mo). Thermogravimetric analysis was used to determine the temperature at which excess carbon was deposited on the carbides. By modifying the synthesis parameters, the deposition of excess carbon was effectively inhibited. The dispersions of the supported nitrides and carbides were constant and suggested that the materials consisted of two

Silicon Nitride for Direct Water-Splitting and Corrosion Mitigation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Head, J.; Turner, J.A.

2006-01-01

Todays fossil fuels are becoming harder to obtain, creating pollution problems, and posing hazards to people’s health. One alternative to fossil fuels is hydrogen, capable of serving as a clean and efficient energy carrier. Certain semiconductors are able to harness the energy of photons and direct it into water electrolysis in a process known as photoelectrochemical water splitting. Triple junction devices integrate three semiconductors of different band gaps resulting in a monolithic material that absorbs over a broader spectrum. Amorphous silicon (a-Si) is one such material that, when stacked in tandem, possesses water-splitting capabilities. Even though a-Si is capable ofmore » splitting water, it is an unstable material in solution and therefore requires a coating to protect the surface from corrosion. A stable, transparent material that has the potential for corrosion protection is silicon nitride. In this study, silicon nitride thin films were grown using DC magnetron sputtering with varying amounts of argon and nitrogen added to the system. X-ray diffraction indicated amorphous silicon nitride films. Current as a function of potential was determined from cyclic voltammetry measurements. Mott-Schottky analysis showed n-type behavior with absorption and transmission measurements indicated variation in flatband potentials. Variation in band gap values ranging from 1.90 to 4.0 eV. Corrosion measurements reveal that the silicon nitride samples exhibit both p-type and n-type behavior. Photocurrent over a range of potentials was greater in samples that were submerged in acidic electrolyte. Silicon nitride shows good stability in acidic, neutral, and basic solutions, indicative of a good material for corrosion mitigation.« less

Anomalous thermal conductivity of monolayer boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tabarraei, Alireza, E-mail: atabarra@uncc.edu; Wang, Xiaonan

In this paper, we use nonequilibrium molecular dynamics modeling to investigate the thermal properties of monolayer hexagonal boron nitride nanoribbons under uniaxial strain along their longitudinal axis. Our simulations predict that hexagonal boron nitride shows an anomalous thermal response to the applied uniaxial strain. Contrary to three dimensional materials, under uniaxial stretching, the thermal conductivity of boron nitride nanoribbons first increases rather than decreasing until it reaches its peak value and then starts decreasing. Under compressive strain, the thermal conductivity of monolayer boron nitride ribbons monolithically reduces rather than increasing. We use phonon spectrum and dispersion curves to investigate themore » mechanism responsible for the unexpected behavior. Our molecular dynamics modeling and density functional theory results show that application of longitudinal tensile strain leads to the reduction of the group velocities of longitudinal and transverse acoustic modes. Such a phonon softening mechanism acts to reduce the thermal conductivity of the nanoribbons. On the other hand, a significant increase in the group velocity (stiffening) of the flexural acoustic modes is observed, which counteracts the phonon softening effects of the longitudinal and transverse modes. The total thermal conductivity of the ribbons is a result of competition between these two mechanisms. At low tensile strain, the stiffening mechanism overcomes the softening mechanism which leads to an increase in the thermal conductivity. At higher tensile strain, the softening mechanism supersedes the stiffening and the thermal conductivity slightly reduces. Our simulations show that the decrease in the thermal conductivity under compressive strain is attributed to the formation of buckling defects which reduces the phonon mean free path.« less

Engineering and Localization of Quantum Emitters in Large Hexagonal Boron Nitride Layers.

PubMed

Choi, Sumin; Tran, Toan Trong; Elbadawi, Christopher; Lobo, Charlene; Wang, Xuewen; Juodkazis, Saulius; Seniutinas, Gediminas; Toth, Milos; Aharonovich, Igor

2016-11-02

Hexagonal boron nitride is a wide-band-gap van der Waals material that has recently emerged as a promising platform for quantum photonics experiments. In this work, we study the formation and localization of narrowband quantum emitters in large flakes (up to tens of micrometers wide) of hexagonal boron nitride. The emitters can be activated in as-grown hexagonal boron nitride by electron irradiation or high-temperature annealing, and the emitter formation probability can be increased by ion implantation or focused laser irradiation of the as-grown material. Interestingly, we show that the emitters are always localized at the edges of the flakes, unlike most luminescent point defects in three-dimensional materials. Our results constitute an important step on the roadmap of deploying hexagonal boron nitride in nanophotonics applications.

Structural, electronic, mechanical and magnetic properties of rare earth nitrides REN (RE= Pm, Eu and Yb)

NASA Astrophysics Data System (ADS)

Murugan, A.; Rajeswarapalanichamy, R.; Santhosh, M.; Iyakutti, K.

2015-07-01

The structural, electronic and mechanical properties of rare earth nitrides REN (RE=Pm, Eu and Yb) are investigated in NaCl and CsCl, and zinc blende structures using first principles calculations based on density functional theory. The calculated lattice parameters are in good agreement with the available results. Among the considered structures, these nitrides are most stable in NaCl structure. A pressure induced structural phase transition from NaCl to CsCl phase is observed in all these nitrides. The electronic structure reveals that these rare earth nitrides are half metallic at normal pressure. These nitrides are found to be covalent and ionic in the stable phase. The computed elastic constants indicate that these nitrides are mechanically stable and elastically anisotropic. Our results confirm that these nitrides are ferromagnetic in nature. A ferromagnetic to non-magnetic phase transition is observed at the pressures of 21.5 GPa and 46.1 GPa in PmN and YbN respectively.

The effect of surface nanocrystallization on plasma nitriding behaviour of AISI 4140 steel

NASA Astrophysics Data System (ADS)

Li, Yang; Wang, Liang; Zhang, Dandan; Shen, Lie

2010-11-01

A plastic deformation surface layer with nanocrystalline grains was produced on AISI 4140 steel by means of surface mechanical attrition treatment (SMAT). Plasma nitriding of SMAT and un-SMAT AISI 4140 steel was carried out by a low-frequency pulse excited plasma unit. A series of nitriding experiments has been conducted at temperatures ranging from 380 to 500 °C for 8 h in an NH 3 gas. The samples were characterized using X-ray diffraction, scanning electron microscopy, optical microscopy and Vickers microhardness tester. The results showed that a much thicker compound layer with higher hardness was obtained for the SMAT samples when compared with un-SMAT samples after nitriding at the low temperature. In particular, plasma nitriding SMAT AISI 4140 steel at 380 °C for 8 h can produced a compound layer of 2.5 μm thickness with very high hardness on the surface, which is similar to un-SMAT samples were plasma nitrided at approximately 430 °C within the same time.

Estimation of sensing characteristics for refractory nitrides based gain assisted core-shell plasmonic nanoparticles

NASA Astrophysics Data System (ADS)

Shishodia, Manmohan Singh; Pathania, Pankaj

2018-04-01

Refractory transition metal nitrides such as zirconium nitride (ZrN), hafnium nitride (HfN) and titanium nitride (TiN) have emerged as viable alternatives to coinage metals based plasmonic materials, e.g., gold (Au) and silver (Ag). The present work assesses the suitability of gain assisted ZrN-, HfN- and TiN-based conventional core-shell nanoparticles (CCSNPs) and multilayered core-shell nanoparticles (MCSNPs) for refractive index sensing. We report that the optical gain incorporation in the dielectric layer leads to multifold enhancement of the scattering efficiency (Qsca), substantial reduction of the spectral full width at half maximum, and a higher figure of merit (FOM). In comparison with CCSNPs, the MCSNP system exhibits superior sensing characteristics such as higher FOM, ˜ 45% reduction in the critical optical gain, response shift towards the biological window, and higher degree of tunability. Inherent biocompatibility, growth compatibility, chemical stability and flexible spectral tuning of refractory nitrides augmented by superior sensing properties in the present work may pave the way for refractory nitrides based low cost sensing.

Kinetic modelling of chlorination of nitrided ilmenite using MATLAB

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramakrishnan, Sivakumar, E-mail: srsivakumar@usm.my; Kwok, Teong Chen, E-mail: ctck@live.com; Hamid, Sheikh Abdul Rezan Sheikh Abdul, E-mail: rezanshk@gmail.com

In the present study, chlorination of nitride ilmenite using 2{sup k} factorial design was investigated. The reduction experiments were carried out in a temperature range of 400°C to 500°C, chlorination duration from 1 hour to 3 hours and using different type of carbon reactant. Phases of raw materials and reduced samples were analyzed by X-ray diffraction (XRD). Ilmenite was reduced to TiO{sub x}C{sub y}N{sub z} through carbothermal and nitridation for further chlorination into titanium tetrachloride. The Design of Experiment analysis suggested that the types of carbon reactant contribute most influence to the extent of chlorination of nitride ilmenite. The extentmore » of chlorination was highest at 500°C with 3 hours chlorination time and carbon nanotube as carbon reactant.« less

Homogeneous and heterogeneous micro-structuring of austenitic stainless steels by the low temperature plasma nitriding

NASA Astrophysics Data System (ADS)

Aizawa, T.; Yoshihara, S.-I.

2018-06-01

The austenitic stainless steels have been widely utilized as a structural component and member as well as a die and mold substrate for stamping. AISI316 dies and molds require for the surface treatment to accommodate the sufficient hardness and wear resistance to them. In addition, the candidate treatment methods must be free from toxicity, energy consumption and inefficiency. The low temperature plasma nitriding process has become one of the most promising methods to make solid-solution hardening by the nitrogen super-saturation. In the present paper, the high density RF/DC plasma nitriding process was applied to form the uniform nitrided layer in the AISI316 matrix and to describe the essential mechanism of inner nitriding in this low temperature nitriding process. In case of the nitrided AISI316 at 673 K for 14.4ks, the nitrided layer thickness became 60 μm with the surface hardness of 1700 HV and the surface nitrogen content of 7 mass %. This inner nitriding process is governed by the synergetic interrelation among the nitrogen super-saturation, the lattice expansion, the phase transformation, the plastic straining, the microstructure refinement and the acceleration of nitrogen diffusion. As far as this interrelation is sustained during the nitriding process, the original austenitic microstructure is homogeneously nitrided to have fine grains with the average size of 0.1 μm and the high crystallographic misorientation angles and to have two phase (γ + α’) structures with the plateau of nitrogen content by 5 mass%. Once this interrelation does not work anymore, the homogeneous microstructure changed itself to the heterogeneous one. The plastic straining took place in the selected coarse grains; they were partially refined into subgrains. This plastic localization accompanied the localized phase transformation.

Nanoscale platforms for messenger RNA delivery.

PubMed

Li, Bin; Zhang, Xinfu; Dong, Yizhou

2018-05-04

Messenger RNA (mRNA) has become a promising class of drugs for diverse therapeutic applications in the past few years. A series of clinical trials are ongoing or will be initiated in the near future for the treatment of a variety of diseases. Currently, mRNA-based therapeutics mainly focuses on ex vivo transfection and local administration in clinical studies. Efficient and safe delivery of therapeutically relevant mRNAs remains one of the major challenges for their broad applications in humans. Thus, effective delivery systems are urgently needed to overcome this limitation. In recent years, numerous nanoscale biomaterials have been constructed for mRNA delivery in order to protect mRNA from extracellular degradation and facilitate endosomal escape after cellular uptake. Nanoscale platforms have expanded the feasibility of mRNA-based therapeutics, and enabled its potential applications to protein replacement therapy, cancer immunotherapy, therapeutic vaccines, regenerative medicine, and genome editing. This review focuses on recent advances, challenges, and future directions in nanoscale platforms designed for mRNA delivery, including lipid and lipid-derived nanoparticles, polymer-based nanoparticles, protein derivatives mRNA complexes, and other types of nanomaterials. This article is categorized under: Nanotechnology Approaches to Biology > Nanoscale Systems in Biology Biology-Inspired Nanomaterials > Lipid-Based Structures Biology-Inspired Nanomaterials > Nucleic Acid-Based Structures. © 2018 Wiley Periodicals, Inc.

Silicon nitride reinforced with molybdenum disilicide

DOEpatents

Petrovic, John J.; Honnell, Richard E.

1991-01-01

Compositions of matter comprised of silicon nitride and molybdenum disilicide and methods of making the compositions, where the molybdenum disilicide is present in amounts ranging from about 5 to about 50 vol. %.

Thermionic field emission in gold nitride Schottky nanodiodes

NASA Astrophysics Data System (ADS)

Spyropoulos-Antonakakis, N.; Sarantopoulou, E.; Kollia, Z.; Samardžija, Z.; Kobe, S.; Cefalas, A. C.

2012-11-01

We report on the thermionic field emission and charge transport properties of gold nitride nanodomains grown by pulsed laser deposition with a molecular fluorine laser at 157 nm. The nanodomains are sandwiched between the metallic tip of a conductive atomic force microscope and a thin gold layer forming thus a metal-semiconductor-metal junction. Although the limited existing data in the literature indicate that gold nitride was synthesized previously with low efficiency, poor stability, and metallic character; in this work, it is shown that gold nitride nanodomains exhibit semiconducting behavior and the metal-semiconductor-metal contact can be modeled with the back-to-back Schottky barrier model. From the experimental I-V curves, the main charge carrier transport process is found to be thermionic field emission via electron tunneling. The rectifying, near symmetric and asymmetric current response of nanocontacts is related to the effective contact area of the gold nitride nanodomains with the metals. A lower limit for the majority charge carriers concentration at the boundaries of nanodomains is also established using the full depletion approximation, as nanodomains with thickness as low as 6 nm were found to be conductive. Current rectification and charge memory effects are also observed in "quite small" conductive nanodomains (6-10 nm) due to stored charges. Indeed, charges near the surface are identified as inversion domains in the phase shift mapping performed with electrostatic force microscopy and are attributed to charge trapping at the boundaries of the nanodomains.

Design of surface modifications for nanoscale sensor applications.

PubMed

Reimhult, Erik; Höök, Fredrik

2015-01-14

Nanoscale biosensors provide the possibility to miniaturize optic, acoustic and electric sensors to the dimensions of biomolecules. This enables approaching single-molecule detection and new sensing modalities that probe molecular conformation. Nanoscale sensors are predominantly surface-based and label-free to exploit inherent advantages of physical phenomena allowing high sensitivity without distortive labeling. There are three main criteria to be optimized in the design of surface-based and label-free biosensors: (i) the biomolecules of interest must bind with high affinity and selectively to the sensitive area; (ii) the biomolecules must be efficiently transported from the bulk solution to the sensor; and (iii) the transducer concept must be sufficiently sensitive to detect low coverage of captured biomolecules within reasonable time scales. The majority of literature on nanoscale biosensors deals with the third criterion while implicitly assuming that solutions developed for macroscale biosensors to the first two, equally important, criteria are applicable also to nanoscale sensors. We focus on providing an introduction to and perspectives on the advanced concepts for surface functionalization of biosensors with nanosized sensor elements that have been developed over the past decades (criterion (iii)). We review in detail how patterning of molecular films designed to control interactions of biomolecules with nanoscale biosensor surfaces creates new possibilities as well as new challenges.

Conducting metal oxide and metal nitride nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

DiSalvo, Jr., Francis J.; Subban, Chinmayee V.

Conducting metal oxide and nitride nanoparticles that can be used in fuel cell applications. The metal oxide nanoparticles are comprised of for example, titanium, niobium, tantalum, tungsten and combinations thereof. The metal nitride nanoparticles are comprised of, for example, titanium, niobium, tantalum, tungsten, zirconium, and combinations thereof. The nanoparticles can be sintered to provide conducting porous agglomerates of the nanoparticles which can be used as a catalyst support in fuel cell applications. Further, platinum nanoparticles, for example, can be deposited on the agglomerates to provide a material that can be used as both an anode and a cathode catalyst supportmore » in a fuel cell.« less

Inter-layer potential for hexagonal boron nitride

NASA Astrophysics Data System (ADS)

Leven, Itai; Azuri, Ido; Kronik, Leeor; Hod, Oded

2014-03-01

A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture well the binding and lateral sliding energies of planar h-BN based dimer systems as well as the interlayer telescoping and rotation of double walled boron-nitride nanotubes of different crystallographic orientations. The new potential thus allows for the accurate and efficient modeling and simulation of large-scale h-BN based layered structures.

Low-temperature direct synthesis of mesoporous vanadium nitrides for electrochemical capacitors

NASA Astrophysics Data System (ADS)

Lee, Hae-Min; Jeong, Gyoung Hwa; Kim, Sang-Wook; Kim, Chang-Koo

2017-04-01

Mesoporous vanadium nitrides are directly synthesized by a one-step chemical precipitation method at a low temperature (70 °C). Structural and morphological analyses reveal that vanadium nitride consist of long and slender nanowhiskers, and mesopores with diameters of 2-5 nm. Compositional analysis confirms the presence of vanadium in the VN structure, along with oxidized vanadium. The cyclic voltammetry and charge-discharge tests indicate that the obtained material stores charges via a combination of electric double-layer capacitance and pseudocapacitance mechanisms. The vanadium nitride electrode exhibits a specific capacitance of 598 F/g at a current density of 4 A/g. After 5000 charge-discharge cycles, the electrode has an equivalent series resistance of 1.42 Ω and retains 83% of its initial specific capacitance. This direct low-temperature synthesis of mesoporous vanadium nitrides is a simple and promising method to achieve high specific capacitance and low equivalent series resistance for electrochemical capacitor applications.

An investigation of nitride precipitates in archaeological iron artefacts from Poland.

PubMed

Kedzierski, Z; Stepiński, J; Zielińska-Lipiec, A

2010-03-01

The paper describes the investigations of nitride precipitates in a spearhead and a sword found in the territory of Poland, in cremation graveyards of the Przeworsk Culture, dated to the Roman Period. Three different techniques of the examination of nitride precipitates were employed: optical microscope, scanning electron microscope (scanning electron microscope with energy dispersive X-ray spectrometer) and transmission electron microscope. Two types of precipitates have been observed, and their plate-like shape was demonstrated. The large precipitate has been confirmed to be gamma'-Fe(4)N, whereas the small one has been identified as alpha''-Fe(16)N(2). The origin of nitride precipitates in archaeological iron artefacts from Poland is probably a result of the manufacturing process or cremation as part of burial rites. An examination of available iron artefacts indicates that nitride precipitates (have only limited effect on mechanical properties) influence the hardness of metal only to a very limited degree.

Investigating Tribological Characteristics of HVOF Sprayed AISI 316 Stainless Steel Coating by Pulsed Plasma Nitriding

NASA Astrophysics Data System (ADS)

Mindivan, H.

2018-01-01

In this study, surface modification of aluminum alloy using High-Velocity Oxygen Fuel (HVOF) thermal spray and pulsed plasma nitriding processes was investigated. AISI 316 stainless steel coating on 1050 aluminum alloy substrate by HVOF process was pulsed plasma nitrided at 793 K under 0.00025 MPa pressure for 43200 s in a gas mixture of 75 % N2 and 25 % H2. The results showed that the pulse plasma nitriding process produced a surface layer with CrN, iron nitrides (Fe3N, Fe4N) and expanded austenite (γN). The pulsed plasma nitrided HVOF-sprayed coating showed higher surface hardness, lower wear rate and coefficient of friction than the untreated HVOF-sprayed one.

Dynamic Multiaxial Response of a Hot-Pressed Aluminum Nitride

DTIC Science & Technology

2012-01-05

Hutchinson, Adv. Appl . Mech. 29 (1992). [34] H. Ming-Yuan, J.W. Hutchinson, Int. J. Solids Struct. 25 (1989) 1053. [35] J. Salem , L. Ghosn, Int. J...Dynamic Multiaxial Response of a Hot- Pressed Aluminum Nitride by Guangli Hu, C. Q. Chen, K. T. Ramesh, and J. W. McCauley ARL-RP-0487...Laboratory Aberdeen Proving Ground, MD 21005-5066 ARL-RP-0487 June 2014 Dynamic Multiaxial Response of a Hot- Pressed Aluminum Nitride

In vitro bio-functionality of gallium nitride sensors for radiation biophysics.

PubMed

Hofstetter, Markus; Howgate, John; Schmid, Martin; Schoell, Sebastian; Sachsenhauser, Matthias; Adigüzel, Denis; Stutzmann, Martin; Sharp, Ian D; Thalhammer, Stefan

2012-07-27

There is an increasing interest in the integration of hybrid bio-semiconductor systems for the non-invasive evaluation of physiological parameters. High quality gallium nitride and its alloys show promising characteristics to monitor cellular parameters. Nevertheless, such applications not only request appropriate sensing capabilities but also the biocompatibility and especially the biofunctionality of materials. Here we show extensive biocompatibility studies of gallium nitride and, for the first time, a biofunctionality assay using ionizing radiation. Analytical sensor devices are used in medical settings, as well as for cell- and tissue engineering. Within these fields, semiconductor devices have increasingly been applied for online biosensing on a cellular and tissue level. Integration of advanced materials such as gallium nitride into these systems has the potential to increase the range of applicability for a multitude of test devices and greatly enhance sensitivity and functionality. However, for such applications it is necessary to optimize cell-surface interactions and to verify the biocompatibility of the semiconductor. In this work, we present studies of mouse fibroblast cell activity grown on gallium nitride surfaces after applying external noxa. Cell-semiconductor hybrids were irradiated with X-rays at air kerma doses up to 250 mGy and the DNA repair dynamics, cell proliferation, and cell growth dynamics of adherent cells were compared to control samples. The impact of ionizing radiation on DNA, along with the associated cellular repair mechanisms, is well characterized and serves as a reference tool for evaluation of substrate effects. The results indicate that gallium nitride does not require specific surface treatments to ensure biocompatibility and suggest that cell signaling is not affected by micro-environmental alterations arising from gallium nitride-cell interactions. The observation that gallium nitride provides no bio-functional influence on

Structural modifications due to interface chemistry at metal-nitride interfaces

PubMed Central

Yadav, S. K.; Shao, S.; Wang, J.; Liu, X.-Y.

2015-01-01

Based on accurate first principles density functional theory (DFT) calculations, an unusual phenomenon of interfacial structural modifications, due to the interface chemistry influence is identified at two metal-nitride interfaces with strong metal-nitrogen affinity, Al/TiN {111} and Al/VN {111} interfaces. It is shown that at such interfaces, a faulted stacking structure is energetically preferred on the Al side of the interface. And both intrinsic and extrinsic stacking fault energies in the vicinity Al layers are negligibly small. However, such phenomenon does not occur in Pt/TiN and Pt/VN interfaces because of the weak Pt-N affinity. Corresponding to structural energies of metal-nitride interfaces, the linear elasticity analysis predicts characteristics of interfacial misfit dislocations at metal-nitride interfaces. PMID:26611639

III-nitrides on oxygen- and zinc-face ZnO substrates

NASA Astrophysics Data System (ADS)

Namkoong, Gon; Burnham, Shawn; Lee, Kyoung-Keun; Trybus, Elaissa; Doolittle, W. Alan; Losurdo, Maria; Capezzuto, Pio; Bruno, Giovanni; Nemeth, Bill; Nause, Jeff

2005-10-01

The characteristics of III-nitrides grown on zinc- and oxygen-face ZnO by plasma-assisted molecular beam epitaxy were investigated. The reflection high-energy electron diffraction pattern indicates formation of a cubic phase at the interface between III-nitride and both Zn- and O-face ZnO. The polarity indicates that Zn-face ZnO leads to a single polarity, while O-face ZnO forms mixed polarity of III-nitrides. Furthermore, by using a vicinal ZnO substrate, the terrace-step growth of GaN was realized with a reduction by two orders of magnitude in the dislocation-related etch pit density to ˜108cm-2, while a dislocation density of ˜1010cm-2 was obtained on the on-axis ZnO substrates.

Study of the kinetics and mechanism of the thermal nitridation of SiO2

NASA Technical Reports Server (NTRS)

Vasquez, R. P.; Madhukar, A.; Grunthaner, F. J.; Naiman, M. L.

1985-01-01

X-ray photoelectron spectroscopy (XPS) has been used to study the nitridation time and temperature dependence of the nitrogen distribution in thermally nitrided SiO2 films. The XPS data show that the maximum nitrogen concentration near the (SiO(x)N(y)/Si interface is initially at the interface, but moves 20-25 A away from the interface with increasing nitridation time. Computer modeling of the kinetic processes involved is carried out and reveals a mechanism in which diffusing species, initially consisting primarily of nitrogen, react with the substrate, followed by formation of the oxygen-rich oxynitride due to reaction of the diffusing oxygen displaced by the slower nitridation of the SiO2. The data are consistent with this mechanism provided the influence of the interfacial strain on the nitridation and oxidation kinetics is explicitly accounted for.

77 FR 54897 - Ferrovanadium and Nitrided Vanadium from the Russian Federation: Revocation of Antidumping Duty...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-09-06

... nitrided vanadium from the Russian Federation (Russia) would not be likely to lead to continuation or... the antidumping duty order on ferrovanadium and nitrided vanadium from Russia. \\1\\ See Ferrovanadium and Nitrided Vanadium From Russia, 77 FR 51825 (August 27, 2012) (ITC Final). DATES: Effective Date...

Gallium nitride-based micro-opto-electro-mechanical systems

NASA Astrophysics Data System (ADS)

Stonas, Andreas Robert

Gallium Nitride and its associated alloys InGaN and AlGaN have many material properties that are highly desirable for micro-electro-mechanical systems (MEMS), and more specifically micro-opto-electro-mechanical systems (MOEMS). The group III-nitrides are tough, stiff, optically transparent, direct bandgap, chemically inert, highly piezoelectric, and capable of functioning at high temperatures. There is currently no other semiconductor system that possesses all of these properties. Taken together, these attributes make the nitrides prime candidates not only for creating new versions of existing device structures, but also for creating entirely unique devices which combine these properties in novel ways. Unfortunately, their chemical resiliency also makes the group III-nitrides extraordinarily difficult to shape into devices. In particular, until this research, no undercut etch technology existed that could controllably separate a selected part of a MEMS device from its sapphire or silicon carbide substrate. This has effectively prevented GaN-based MEMS from being developed. This dissertation describes how this fabrication obstacle was overcome by a novel etching geometry (bandgap-selective backside-illuminated photoelectochemical (BS-BIPEC) etching) and its resulting morphologies. Several gallium-nitride based MEMS devices were created, actuated, and modelled, including cantilevers and membranes. We describe in particular our pursuit of one of the many novel device elements that is possible only in this material system: a transducer that uses an externally applied strain to dynamically change the optical transition energy of a quantum well. While the device objective of a dynamically tunable quantum well was not achieved, we have demonstrated sufficient progress to believe that such a device will be possible soon. We have observed a shift (5.5meV) of quantum well transition energies in released structures, and we have created structures that can apply large biaxial

Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications

PubMed Central

Micó, Gloria; Pastor, Daniel; Pérez, Daniel; Doménech, José David; Fernández, Juan; Baños, Rocío; Alemany, Rubén; Sánchez, Ana M.; Cirera, Josep M.; Mas, Roser

2017-01-01

Silicon nitride photonics is on the rise owing to the broadband nature of the material, allowing applications of biophotonics, tele/datacom, optical signal processing and sensing, from visible, through near to mid-infrared wavelengths. In this paper, a review of the state of the art of silicon nitride strip waveguide platforms is provided, alongside the experimental results on the development of a versatile 300 nm guiding film height silicon nitride platform. PMID:28895906

Discontinuous precipitation in a nickel-free high nitrogen austenitic stainless steel on solution nitriding

NASA Astrophysics Data System (ADS)

Mohammadzadeh, Roghayeh; Akbari, Alireza; Grumsen, Flemming B.; Somers, Marcel A. J.

2017-10-01

Chromium-rich nitride precipitates in production of nickel-free austenitic stainless steel plates via pressurised solution nitriding of Fe-22.7Cr-2.4Mo ferritic stainless steel at 1473 K (1200 °C) under a nitrogen gas atmosphere was investigated. The microstructure, chemical and phase composition, morphology and crystallographic orientation between the resulted austenite and precipitates were investigated using optical microscopy, X-ray Diffraction (XRD), Scanning and Transmission Electron Microscopy (TEM) and Electron Back Scatter Diffraction (EBSD). On prolonged nitriding, Chromium-rich nitride precipitates were formed firstly close to the surface and later throughout the sample with austenitic structure. Chromium-rich nitride precipitates with a rod or strip-like morphology was developed by a discontinuous cellular precipitation mechanism. STEM-EDS analysis demonstrated partitioning of metallic elements between austenite and nitrides, with chromium contents of about 80 wt.% in the precipitates. XRD analysis indicated that the Chromium-rich nitride precipitates are hexagonal (Cr, Mo)2N. Based on the TEM studies, (Cr, Mo)2N precipitates presented a (1 1 1)γ//(0 0 2)(Cr, Mo)2N, ?γ//?(Cr, Mo)2N orientation relationship with respect to the austenite matrix. EBSD studies revealed that the austenite in the regions that have transformed into austenite and (Cr, Mo)2N have no orientation relation to the untransformed austenite.

Cell behavior on gallium nitride surfaces: peptide affinity attachment versus covalent functionalization.

PubMed

Foster, Corey M; Collazo, Ramon; Sitar, Zlatko; Ivanisevic, Albena

2013-07-02

Gallium nitride is a wide band gap semiconductor that demonstrates a unique set of optical and electrical properties as well as aqueous stability and biocompatibility. This combination of properties makes gallium nitride a strong candidate for use in chemical and biological applications such as sensors and neural interfaces. Molecular modification can be used to enhance the functionality and properties of the gallium nitride surface. Here, gallium nitride surfaces were functionalized with a PC12 cell adhesion promoting peptide using covalent and affinity driven attachment methods. The covalent scheme proceeded by Grignard reaction and olefin metathesis while the affinity driven scheme utilized the recognition peptide isolated through phage display. This study shows that the method of attaching the adhesion peptide influences PC12 cell adhesion and differentiation as measured by cell density and morphological analysis. Covalent attachment promoted monolayer and dispersed cell adhesion while affinity driven attachment promoted multilayer cell agglomeration. Higher cell density was observed on surfaces modified using the recognition peptide. The results suggest that the covalent and affinity driven attachment methods are both suitable for promoting PC12 cell adhesion to the gallium nitride surface, though each method may be preferentially suited for distinct applications.

Inverse magnetostrictive characteristics of Fe-Co composite materials using gas-nitriding process

NASA Astrophysics Data System (ADS)

Nakajima, Kenya; Yang, Zhenjun; Narita, Fumio

2018-03-01

The inverse magnetostrictive response, known as the Villari effect, of magnetostrictive materials is a change in magnetization due to an applied stress. It is commonly used for sensor applications. This work deals with the inverse magnetostrictive characteristics of Fe-Co bimetal plates that were subjected gas-nitriding process. Gas-nitriding was performed on bimetal plates for 30 min at 853 K as a surface heat treatment process. The specimens were cooled to room temperature after completing the nitriding treatment. Three-point bending tests were performed on the plates under a magnetic field. The changes on the magnetic induction of the plates due to the applied load are discussed. The effect of the nitriding treatment on the inverse magnetostrictive characteristics, magnetostrictive susceptibility, and magnetic hysteresis loop was examined. Our work represents an important step forward in the development of magnetostrictive sensor materials.

Hydrogen adsorption capacities of multi-walled boron nitride nanotubes and nanotube arrays: a grand canonical Monte Carlo study.

PubMed

Ahadi, Zohreh; Shadman, Muhammad; Yeganegi, Saeed; Asgari, Farid

2012-07-01

Hydrogen adsorption in multi-walled boron nitride nanotubes and their arrays was studied using grand canonical Monte Carlo simulation. The results show that hydrogen storage increases with tube diameter and the distance between the tubes in multi-walled boron nitride nanotube arrays. Also, triple-walled boron nitride nanotubes present the lowest level of hydrogen physisorption, double-walled boron nitride nanotubes adsorb hydrogen better when the diameter of the inner tube diameter is sufficiently large, and single-walled boron nitride nanotubes adsorb hydrogen well when the tube diameter is small enough. Boron nitride nanotube arrays adsorb hydrogen, but the percentage of adsorbed hydrogen (by weight) in boron nitride nanotube arrays is rather similar to that found in multi-walled boron nitride nanotubes. Also, when the Langmuir and Langmuir-Freundlich equations were fitted to the simulated data, it was found that multi-layer adsorptivity occurs more prominently as the number of walls and the tube diameter increase. However, in single-walled boron nitride nanotubes with a small diameter, the dominant mechanism is monolayer adsorptivity.

Boron nitride encapsulated graphene infrared emitters

NASA Astrophysics Data System (ADS)

Barnard, H. R.; Zossimova, E.; Mahlmeister, N. H.; Lawton, L. M.; Luxmoore, I. J.; Nash, G. R.

2016-03-01

The spatial and spectral characteristics of mid-infrared thermal emission from devices containing a large area multilayer graphene layer, encapsulated using hexagonal boron nitride, have been investigated. The devices were run continuously in air for over 1000 h, with the emission spectrum covering the absorption bands of many important gases. An approximate solution to the heat equation was used to simulate the measured emission profile across the devices yielding an estimated value of the characteristic length, which defines the exponential rise/fall of the temperature profile across the device, of 40 μm. This is much larger than values obtained in smaller exfoliated graphene devices and reflects the device geometry, and the increase in lateral heat conduction within the devices due to the multilayer graphene and boron nitride layers.

Reverse micelle synthesis of nanoscale metal containing catalysts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darab, J.G.; Fulton, J.L.; Linehan, J.C.

1993-03-01

The need for morphological control during the synthesis of catalyst precursor powders is generally accepted to be important. In the liquefaction of coal, for example, iron-bearing catalyst precursor particles containing individual crystallites with diameters in the 1-100 nanometer range are believed to achieve good dispersion through out the coal-solvent slurry during liquefaction 2 runs and to undergo chemical transformations to catalytically active iron sulfide phases. The production of the nanoscale powders described here employs the confining spherical microdomains comprising the aqueous phase of a modified reverse micelle (MRM) microemulsion system as nanoscale reaction vessels in which polymerization, electrochemical reduction andmore » precipitation of solvated salts can occur. The goal is to take advantage of the confining nature of micelles to kinetically hinder transformation processes which readily occur in bulk aqueous solution in order to control the morphology and phase of the resulting powder. We have prepared a variety of metal, alloy, and metal- and mixed metal-oxide nanoscale powders from appropriate MRM systems. Examples of nanoscale powders produced include Co, Mo-Co, Ni{sub 3}Fe, Ni, and various oxides and oxyhydroxides of iron. Here, we discuss the preparation and characterization of nickel metal (with a nickel oxide surface layer) and iron oxyhydroxide MRM nanoscale powders. We have used extended x-ray absorption fine structure (EXAFS) spectroscopy to study the chemical polymerization process in situ, x-ray diffraction (XRD), scanning and transmission electron microcroscopies (SEM and TEM), elemental analysis and structural modelling to characterize the nanoscale powders produced. The catalytic activity of these powders is currently being studied.« less

M23C6 carbides and Cr2N nitrides in aged duplex stainless steel: A SEM, TEM and FIB tomography investigation.

PubMed

Maetz, J-Y; Douillard, T; Cazottes, S; Verdu, C; Kléber, X

2016-05-01

The precipitation evolution during ageing of a 2101 lean duplex stainless steel was investigated, revealing that the precipitate type and morphology depends on the nature of the grain boundary. Triangular M23C6 carbides precipitate only at γ/δ interfaces and rod-like Cr2N nitrides precipitate at both γ/δ and δ/δ interfaces. After 15min of ageing, the M23C6 size no longer evolves, whereas that of the Cr2N continues to evolve. For Cr2N, the morphology is maintained at γ/δ interfaces, whereas percolation occurs to form a continuous layer at δ/δ interfaces. By combining 2D and 3D characterisation at the nanoscale using transmission electron microscopy (TEM) and focused ion beam (FIB) tomography, a complete description of the precipitation evolution was obtained, including the composition, crystallographic structure, orientation relationship with the matrix phases, location, morphology, size and volume fraction. Copyright © 2016 Elsevier Ltd. All rights reserved.

PREFACE: Superconductivity in ultrathin films and nanoscale systems Superconductivity in ultrathin films and nanoscale systems

NASA Astrophysics Data System (ADS)

Bianconi, Antonio; Bose, Sangita; Garcia-Garcia, Antonio Miguel

2012-12-01

The recent technological developments in the synthesis and characterization of high-quality nanostructures and developments in the theoretical techniques needed to model these materials, have motivated this focus section of Superconductor Science and Technology. Another motivation is the compelling evidence that all new superconducting materials, such as iron pnictides and chalcogenides, diborides (doped MgB2) and fullerides (alkali-doped C60 compounds), are heterostrucures at the atomic limit, such as the cuprates made of stacks of nanoscale superconducting layers intercalated by different atomic layers with nanoscale periodicity. Recently a great amount of interest has been shown in the role of lattice nano-architecture in controlling the fine details of Fermi surface topology. The experimental and theoretical study of superconductivity in the nanoscale started in the early 1960s, shortly after the discovery of the BCS theory. Thereafter there has been rapid progress both in experiments and the theoretical understanding of nanoscale superconductors. Experimentally, thin films, granular films, nanowires, nanotubes and single nanoparticles have all been explored. New quantum effects appear in the nanoscale related to multi-component condensates. Advances in the understanding of shape resonances or Fano resonances close to 2.5 Lifshitz transitions near a band edge in nanowires, 2D films and superlattices [1, 2] of these nanosized modules, provide the possibility of manipulating new quantum electronic states. Parity effects and shell effects in single, isolated nanoparticles have been reported by several groups. Theoretically, newer techniques based on solving Richardson's equation (an exact theory incorporating finite size effects to the BCS theory) numerically by path integral methods or solving the entire Bogoliubov-de Gennes equation in these limits have been attempted, which has improved our understanding of the mechanism of superconductivity in these confined

Magnetism and structural chemistry of ternary borides RE2MB 6 ( RE = rare earth, M = Ru, Os)

NASA Astrophysics Data System (ADS)

Hiebl, K.; Rogl, P.; Nowotny, H.

1984-10-01

The magnetic behavior of the ternary borides RE2RuB 6 and RE2OsB 6 ( RE = Y, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu) was studied in the temperature range 1.5 K < T < 1100 K. All compounds crystallize with the Y 2ReB 6-type structure and are characterized by direct RE- RE contacts and the formation of planar infinite two-dimensional rigid boron nets. The magnetic properties reveal a typical Van Vleck paramagnetism of free RE3+-ions at temperatures higher than 200 K with ferromagnetic interaction in the low-temperature range T < 55 K. The ferromagnetic ordering temperatures vary with the De Gennes factor. There is no indication for a magnetic contribution from the Ru(Os)-sublattice. Above 1.8 K none of the samples were found to be superconducting.

Concise N-doped Carbon Nanosheets/Vanadium Nitride Nanoparticles Materials via Intercalative Polymerization for Supercapacitors.

PubMed

Tan, Yongtao; Liu, Ying; Tang, Zhenghua; Wang, Zhe; Kong, Lingbin; Kang, Long; Liu, Zhen; Ran, Fen

2018-02-13

N-doped carbon nanosheets/vanadium nitride nanoparticles (N-CNS/VNNPs) are synthesized via a novel method combining surface-initiated in-situ intercalative polymerization and thermal-treatment process in NH 3 /N 2 atmosphere. The pH value of the synthesis system plays a critical role in constructing the structure and enhancing electrochemical performance for N-CNS/VNNPs, which are characterized by SEM, TEM, XRD, and XPS, and measured by electrochemical station, respectively. The results show that N-CNS/VNNPs materials consist of 2D N-doped carbon nanosheets and 0D VN nanoparticles. With the pH value decreasing from 2 to 0, the sizes of both carbon nanosheets and VN nanoparticles decreased to smaller in nanoscale. The maximum specific capacitance of 280 F g -1 at the current density of 1 A g -1 for N-CNS/VNNPs is achieved in three-electrode configuration. The asymmetric energy device of Ni(OH) 2 ||N-CNS/VNNPs offers a specific capacitance of 89.6 F g -1 and retention of 60% at 2.7 A g -1 after 5000 cycles. The maximum energy density of Ni(OH) 2 ||N-CNS/VNNPs asymmetric energy device is as high as 29.5 Wh kg -1 .

A new molybdenum nitride catalyst with rhombohedral MoS 2 structure for hydrogenation applications

DOE PAGES

Wang, Shanmin; Ge, Hui; Sun, Shouli; ...

2015-03-23

Here, nitrogen–rich transition–metal nitrides hold great promise to be the next–generation catalysts for clean and renewable energy applications. However, incorporation of nitrogen into the crystalline lattices of transition metals is thermodynamically unfavorable at atmospheric pressure; most of the known transition metal nitrides are nitrogen–deficient with molar ratios of N : metal less than a unity. In this work, we have formulated a high–pressure route for the synthesis of a nitrogen–rich molybdenum nitride through a solid–state ion–exchange reaction. The newly discovered nitride, 3R–MoN 2, adopts a rhombohedral R3m structure, isotypic with MoS 2. This new nitride exhibits catalytic activities that aremore » three times more active than the traditional catalyst MoS 2 for the hydrodesulfurization of dibenzothiophene and more than twice higher in the selectivity to hydrogenation. The nitride is also catalytically active in sour methanation of syngas with >80% CO and H 2 conversion at 723 K. Our formulated route for the synthesis of 3R–MoN 2 is at a moderate pressure of 3.5 GPa and is thus feasible for industrial–scale catalyst production.« less

A new molybdenum nitride catalyst with rhombohedral MoS2 structure for hydrogenation applications.

PubMed

Wang, Shanmin; Ge, Hui; Sun, Shouli; Zhang, Jianzhong; Liu, Fangming; Wen, Xiaodong; Yu, Xiaohui; Wang, Liping; Zhang, Yi; Xu, Hongwu; Neuefeind, Joerg C; Qin, Zhangfeng; Chen, Changfeng; Jin, Changqin; Li, Yongwang; He, Duanwei; Zhao, Yusheng

2015-04-15

Nitrogen-rich transition-metal nitrides hold great promise to be the next-generation catalysts for clean and renewable energy applications. However, incorporation of nitrogen into the crystalline lattices of transition metals is thermodynamically unfavorable at atmospheric pressure; most of the known transition metal nitrides are nitrogen-deficient with molar ratios of N:metal less than a unity. In this work, we have formulated a high-pressure route for the synthesis of a nitrogen-rich molybdenum nitride through a solid-state ion-exchange reaction. The newly discovered nitride, 3R-MoN2, adopts a rhombohedral R3m structure, isotypic with MoS2. This new nitride exhibits catalytic activities that are three times more active than the traditional catalyst MoS2 for the hydrodesulfurization of dibenzothiophene and more than twice as high in the selectivity to hydrogenation. The nitride is also catalytically active in sour methanation of syngas with >80% CO and H2 conversion at 723 K. Our formulated route for the synthesis of 3R-MoN2 is at a moderate pressure of 3.5 GPa and, thus, is feasible for industrial-scale catalyst production.

Reverse micelle synthesis of nanoscale metal containing catalysts. [Nickel metal (with a nickel oxide surface layer) and iron oxyhydroxide nanoscale powders

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darab, J.G.; Fulton, J.L.; Linehan, J.C.

1993-03-01

The need for morphological control during the synthesis of catalyst precursor powders is generally accepted to be important. In the liquefaction of coal, for example, iron-bearing catalyst precursor particles containing individual crystallites with diameters in the 1-100 nanometer range are believed to achieve good dispersion through out the coal-solvent slurry during liquefaction 2 runs and to undergo chemical transformations to catalytically active iron sulfide phases. The production of the nanoscale powders described here employs the confining spherical microdomains comprising the aqueous phase of a modified reverse micelle (MRM) microemulsion system as nanoscale reaction vessels in which polymerization, electrochemical reduction andmore » precipitation of solvated salts can occur. The goal is to take advantage of the confining nature of micelles to kinetically hinder transformation processes which readily occur in bulk aqueous solution in order to control the morphology and phase of the resulting powder. We have prepared a variety of metal, alloy, and metal- and mixed metal-oxide nanoscale powders from appropriate MRM systems. Examples of nanoscale powders produced include Co, Mo-Co, Ni[sub 3]Fe, Ni, and various oxides and oxyhydroxides of iron. Here, we discuss the preparation and characterization of nickel metal (with a nickel oxide surface layer) and iron oxyhydroxide MRM nanoscale powders. We have used extended x-ray absorption fine structure (EXAFS) spectroscopy to study the chemical polymerization process in situ, x-ray diffraction (XRD), scanning and transmission electron microcroscopies (SEM and TEM), elemental analysis and structural modelling to characterize the nanoscale powders produced. The catalytic activity of these powders is currently being studied.« less

METHOD OF COATING GRAPHITE WITH STABLE METAL CARBIDES AND NITRIDES

DOEpatents

Gurinsky, D.H.

1959-10-27

A method is presented for forming protective stable nitride and carbide compounds on the surface of graphite. This is accomplished by contacting the graphite surface with a fused heavy liquid metal such as bismuth or leadbismuth containing zirconium, titanium, and hafnium dissolved or finely dispersed therein to form a carbide and nitride of at least one of the dissolved metals on the graphite surface.

Design of Surface Modifications for Nanoscale Sensor Applications

PubMed Central

Reimhult, Erik; Höök, Fredrik

2015-01-01

Nanoscale biosensors provide the possibility to miniaturize optic, acoustic and electric sensors to the dimensions of biomolecules. This enables approaching single-molecule detection and new sensing modalities that probe molecular conformation. Nanoscale sensors are predominantly surface-based and label-free to exploit inherent advantages of physical phenomena allowing high sensitivity without distortive labeling. There are three main criteria to be optimized in the design of surface-based and label-free biosensors: (i) the biomolecules of interest must bind with high affinity and selectively to the sensitive area; (ii) the biomolecules must be efficiently transported from the bulk solution to the sensor; and (iii) the transducer concept must be sufficiently sensitive to detect low coverage of captured biomolecules within reasonable time scales. The majority of literature on nanoscale biosensors deals with the third criterion while implicitly assuming that solutions developed for macroscale biosensors to the first two, equally important, criteria are applicable also to nanoscale sensors. We focus on providing an introduction to and perspectives on the advanced concepts for surface functionalization of biosensors with nanosized sensor elements that have been developed over the past decades (criterion (iii)). We review in detail how patterning of molecular films designed to control interactions of biomolecules with nanoscale biosensor surfaces creates new possibilities as well as new challenges. PMID:25594599

Plasmonic efficiencies of nanoparticles made of metal nitrides (TiN, ZrN) compared with gold

PubMed Central

Lalisse, Adrien; Tessier, Gilles; Plain, Jérome; Baffou, Guillaume

2016-01-01

Metal nitrides have been proposed to replace noble metals in plasmonics for some specific applications. In particular, while titanium nitride (TiN) and zirconium nitride (ZrN) possess localized plasmon resonances very similar to gold in magnitude and wavelength, they benefit from a much higher sustainability to temperature. For this reason, they are foreseen as ideal candidates for applications in nanoplasmonics that require high material temperature under operation, such as heat assisted magnetic recording (HAMR) or thermophotovoltaics. This article presents a detailed investigation of the plasmonic properties of TiN and ZrN nanoparticles in comparison with gold nanoparticles, as a function of the nanoparticle morphology. As a main result, metal nitrides are shown to be poor near-field enhancers compared to gold, no matter the nanoparticle morphology and wavelength. The best efficiencies of metal nitrides as compared to gold in term of near-field enhancement are obtained for small and spherical nanoparticles, and they do not exceed 60%. Nanoparticle enlargements or asymmetries are detrimental. These results mitigate the utility of metal nitrides for high-temperature applications such as HAMR, despite their high temperature sustainability. Nevertheless, at resonance, metal nitrides behave as efficient nanosources of heat and could be relevant for applications in thermoplasmonics, where heat generation is not detrimental but desired. PMID:27934890

Plasmonic efficiencies of nanoparticles made of metal nitrides (TiN, ZrN) compared with gold.

PubMed

Lalisse, Adrien; Tessier, Gilles; Plain, Jérome; Baffou, Guillaume

2016-12-09

Metal nitrides have been proposed to replace noble metals in plasmonics for some specific applications. In particular, while titanium nitride (TiN) and zirconium nitride (ZrN) possess localized plasmon resonances very similar to gold in magnitude and wavelength, they benefit from a much higher sustainability to temperature. For this reason, they are foreseen as ideal candidates for applications in nanoplasmonics that require high material temperature under operation, such as heat assisted magnetic recording (HAMR) or thermophotovoltaics. This article presents a detailed investigation of the plasmonic properties of TiN and ZrN nanoparticles in comparison with gold nanoparticles, as a function of the nanoparticle morphology. As a main result, metal nitrides are shown to be poor near-field enhancers compared to gold, no matter the nanoparticle morphology and wavelength. The best efficiencies of metal nitrides as compared to gold in term of near-field enhancement are obtained for small and spherical nanoparticles, and they do not exceed 60%. Nanoparticle enlargements or asymmetries are detrimental. These results mitigate the utility of metal nitrides for high-temperature applications such as HAMR, despite their high temperature sustainability. Nevertheless, at resonance, metal nitrides behave as efficient nanosources of heat and could be relevant for applications in thermoplasmonics, where heat generation is not detrimental but desired.

Silver Nanoparticle-Deposited Boron Nitride Nanosheets as Fillers for Polymeric Composites with High Thermal Conductivity.

PubMed

Wang, Fangfang; Zeng, Xiaoliang; Yao, Yimin; Sun, Rong; Xu, Jianbin; Wong, Ching-Ping

2016-01-19

Polymer composites with high thermal conductivity have recently attracted much attention, along with the rapid development of the electronic devices toward higher speed and performance. However, a common method to enhance polymer thermal conductivity through an addition of high thermally conductive fillers usually cannot provide an expected value, especially for composites requiring electrical insulation. Here, we show that polymeric composites with silver nanoparticle-deposited boron nitride nanosheets as fillers could effectively enhance the thermal conductivity of polymer, thanks to the bridging connections of silver nanoparticles among boron nitride nanosheets. The thermal conductivity of the composite is significantly increased from 1.63 W/m-K for the composite filled with the silver nanoparticle-deposited boron nitride nanosheets to 3.06 W/m-K at the boron nitride nanosheets loading of 25.1 vol %. In addition, the electrically insulating properties of the composite are well preserved. Fitting the measured thermal conductivity of epoxy composite with one physical model indicates that the composite with silver nanoparticle-deposited boron nitride nanosheets outperforms the one with boron nitride nanosheets, owning to the lower thermal contact resistance among boron nitride nanosheets' interfaces. The finding sheds new light on enhancement of thermal conductivity of the polymeric composites which concurrently require the electrical insulation.

Silver Nanoparticle-Deposited Boron Nitride Nanosheets as Fillers for Polymeric Composites with High Thermal Conductivity

PubMed Central

Wang, Fangfang; Zeng, Xiaoliang; Yao, Yimin; Sun, Rong; Xu, Jianbin; Wong, Ching-Ping

2016-01-01

Polymer composites with high thermal conductivity have recently attracted much attention, along with the rapid development of the electronic devices toward higher speed and performance. However, a common method to enhance polymer thermal conductivity through an addition of high thermally conductive fillers usually cannot provide an expected value, especially for composites requiring electrical insulation. Here, we show that polymeric composites with silver nanoparticle-deposited boron nitride nanosheets as fillers could effectively enhance the thermal conductivity of polymer, thanks to the bridging connections of silver nanoparticles among boron nitride nanosheets. The thermal conductivity of the composite is significantly increased from 1.63 W/m-K for the composite filled with the silver nanoparticle-deposited boron nitride nanosheets to 3.06 W/m-K at the boron nitride nanosheets loading of 25.1 vol %. In addition, the electrically insulating properties of the composite are well preserved. Fitting the measured thermal conductivity of epoxy composite with one physical model indicates that the composite with silver nanoparticle-deposited boron nitride nanosheets outperforms the one with boron nitride nanosheets, owning to the lower thermal contact resistance among boron nitride nanosheets’ interfaces. The finding sheds new light on enhancement of thermal conductivity of the polymeric composites which concurrently require the electrical insulation. PMID:26783258