Sample records for nanoscale optoelectronic devices

  1. Electronic and optoelectronic nano-devices based on carbon nanotubes.

    PubMed

    Scarselli, M; Castrucci, P; De Crescenzi, M

    2012-08-08

    The discovery and understanding of nanoscale phenomena and the assembly of nanostructures into different devices are among the most promising fields of material science research. In this scenario, carbon nanostructures have a special role since, in having only one chemical element, they allow physical properties to be calculated with high precision for comparison with experiment. Carbon nanostructures, and carbon nanotubes (CNTs) in particular, have such remarkable electronic and structural properties that they are used as active building blocks for a large variety of nanoscale devices. We review here the latest advances in research involving carbon nanotubes as active components in electronic and optoelectronic nano-devices. Opportunities for future research are also identified.

  2. Optoelectronic Devices and Materials

    NASA Astrophysics Data System (ADS)

    Sweeney, Stephen; Adams, Alfred

    Unlike the majority of electronic devices, which are silicon based, optoelectronic devices are predominantly made using III-V semiconductor compounds such as GaAs, InP, GaN and GaSb and their alloys due to their direct band gap. Understanding the properties of these materials has been of vital importance in the development of optoelectronic devices. Since the first demonstration of a semiconductor laser in the early 1960s, optoelectronic devices have been produced in their millions, pervading our everyday lives in communications, computing, entertainment, lighting and medicine. It is perhaps their use in optical-fibre communications that has had the greatest impact on humankind, enabling high-quality and inexpensive voice and data transmission across the globe. Optical communications spawned a number of developments in optoelectronics, leading to devices such as vertical-cavity surface-emitting lasers, semiconductor optical amplifiers, optical modulators and avalanche photodiodes. In this chapter we discuss the underlying theory of operation of the most important optoelectronic devices. The influence of carrier-photon interactions is discussed in the context of producing efficient emitters and detectors. Finally we discuss how the semiconductor band structure can be manipulated to enhance device properties using quantum confinement and strain effects, and how the addition of dilute amounts of elements such as nitrogen is having a profound effect on the next generation of optoelectronic devices.

  3. Wrapped optoelectronic devices and methods for making same

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Curran, Seamus; Dias, Sampath; Alley, Nigel

    In various embodiments, optoelectronic devices are described herein. The optoelectronic device may include an optoelectronic cell arranged so as to wrap around a central axis wherein the cell includes a first conductive layer, a semi-conductive layer disposed over and in electrical communication with the first conductive layer, and a second conductive layer disposed over and in electrical communication with the semi-conductive layer. In various embodiments, methods for making optoelectronic devices are described herein. The methods may include forming an optoelectronic cell while flat and wrapping the optoelectronic cell around a central axis. The optoelectronic devices may be photovoltaic devices. Alternatively,more » the optoelectronic devices may be organic light emitting diodes.« less

  4. Recent Advances in Biointegrated Optoelectronic Devices.

    PubMed

    Xu, Huihua; Yin, Lan; Liu, Chuan; Sheng, Xing; Zhao, Ni

    2018-05-28

    With recent progress in the design of materials and mechanics, opportunities have arisen to improve optoelectronic devices, circuits, and systems in curved, flexible, stretchable, and biocompatible formats, thereby enabling integration of customized optoelectronic devices and biological systems. Here, the core material technologies of biointegrated optoelectronic platforms are discussed. An overview of the design and fabrication methods to form semiconductor materials and devices in flexible and stretchable formats is presented, strategies incorporating various heterogeneous substrates, interfaces, and encapsulants are discussed, and their applications in biomimetic, wearable, and implantable systems are highlighted. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Device-packaging method and apparatus for optoelectronic circuits

    DOEpatents

    Zortman, William A.; Henry, Michael David; Jarecki, Jr., Robert L.

    2017-04-25

    An optoelectronic device package and a method for its fabrication are provided. The device package includes a lid die and an active die that is sealed or sealable to the lid die and in which one or more optical waveguides are integrally defined. The active die includes one or more active device regions, i.e. integral optoelectronic devices or etched cavities for placement of discrete optoelectronic devices. Optical waveguides terminate at active device regions so that they can be coupled to them. Slots are defined in peripheral parts of the active dies. At least some of the slots are aligned with the ends of integral optical waveguides so that optical fibers or optoelectronic devices inserted in the slots can optically couple to the waveguides.

  6. Delay dynamics of neuromorphic optoelectronic nanoscale resonators: Perspectives and applications.

    PubMed

    Romeira, Bruno; Figueiredo, José M L; Javaloyes, Julien

    2017-11-01

    With the recent exponential growth of applications using artificial intelligence (AI), the development of efficient and ultrafast brain-like (neuromorphic) systems is crucial for future information and communication technologies. While the implementation of AI systems using computer algorithms of neural networks is emerging rapidly, scientists are just taking the very first steps in the development of the hardware elements of an artificial brain, specifically neuromorphic microchips. In this review article, we present the current state of the art of neuromorphic photonic circuits based on solid-state optoelectronic oscillators formed by nanoscale double barrier quantum well resonant tunneling diodes. We address, both experimentally and theoretically, the key dynamic properties of recently developed artificial solid-state neuron microchips with delayed perturbations and describe their role in the study of neural activity and regenerative memory. This review covers our recent research work on excitable and delay dynamic characteristics of both single and autaptic (delayed) artificial neurons including all-or-none response, spike-based data encoding, storage, signal regeneration and signal healing. Furthermore, the neural responses of these neuromorphic microchips display all the signatures of extended spatio-temporal localized structures (LSs) of light, which are reviewed here in detail. By taking advantage of the dissipative nature of LSs, we demonstrate potential applications in optical data reconfiguration and clock and timing at high-speeds and with short transients. The results reviewed in this article are a key enabler for the development of high-performance optoelectronic devices in future high-speed brain-inspired optical memories and neuromorphic computing.

  7. Delay dynamics of neuromorphic optoelectronic nanoscale resonators: Perspectives and applications

    NASA Astrophysics Data System (ADS)

    Romeira, Bruno; Figueiredo, José M. L.; Javaloyes, Julien

    2017-11-01

    With the recent exponential growth of applications using artificial intelligence (AI), the development of efficient and ultrafast brain-like (neuromorphic) systems is crucial for future information and communication technologies. While the implementation of AI systems using computer algorithms of neural networks is emerging rapidly, scientists are just taking the very first steps in the development of the hardware elements of an artificial brain, specifically neuromorphic microchips. In this review article, we present the current state of the art of neuromorphic photonic circuits based on solid-state optoelectronic oscillators formed by nanoscale double barrier quantum well resonant tunneling diodes. We address, both experimentally and theoretically, the key dynamic properties of recently developed artificial solid-state neuron microchips with delayed perturbations and describe their role in the study of neural activity and regenerative memory. This review covers our recent research work on excitable and delay dynamic characteristics of both single and autaptic (delayed) artificial neurons including all-or-none response, spike-based data encoding, storage, signal regeneration and signal healing. Furthermore, the neural responses of these neuromorphic microchips display all the signatures of extended spatio-temporal localized structures (LSs) of light, which are reviewed here in detail. By taking advantage of the dissipative nature of LSs, we demonstrate potential applications in optical data reconfiguration and clock and timing at high-speeds and with short transients. The results reviewed in this article are a key enabler for the development of high-performance optoelectronic devices in future high-speed brain-inspired optical memories and neuromorphic computing.

  8. Engineering highly organized and aligned single walled carbon nanotube networks for electronic device applications: Interconnects, chemical sensor, and optoelectronics

    NASA Astrophysics Data System (ADS)

    Kim, Young Lae

    For 20 years, single walled carbon nanotubes (SWNTs) have been studied actively due to their unique one-dimensional nanostructure and superior electrical, thermal, and mechanical properties. For these reasons, they offer the potential to serve as building blocks for future electronic devices such as field effect transistors (FETs), electromechanical devices, and various sensors. In order to realize these applications, it is crucial to develop a simple, scalable, and reliable nanomanufacturing process that controllably places aligned SWNTs in desired locations, orientations, and dimensions. Also electronic properties (semiconducting/metallic) of SWNTs and their organized networks must be controlled for the desired performance of devices and systems. These fundamental challenges are significantly limiting the use of SWNTs for future electronic device applications. Here, we demonstrate a strategy to fabricate highly controlled micro/nanoscale SWNT network structures and present the related assembly mechanism to engineer the SWNT network topology and its electrical transport properties. A method designed to evaluate the electrical reliability of such nano- and microscale SWNT networks is also presented. Moreover, we develop and investigate a robust SWNT based multifunctional selective chemical sensor and a range of multifunctional optoelectronic switches, photo-transistors, optoelectronic logic gates and complex optoelectronic digital circuits.

  9. Opto-Electronic Characterization CdTe Solar Cells from TCO to Back Contact with Nano-Scale CL Probe

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Moseley, John; Al-Jassim, Mowafak M.; Paudel, Naba

    2015-06-14

    We used cathodoluminescence (CL) (spectrum-per-pixel) imaging on beveled CdTe solar cell sections to investigate the opto-electronic properties of these devices from the TCO to the back contact. We used a nano-scale CL probe to resolve luminescence from grain boundary (GB) and grain interior (GI) locations near the CdS/CdTe interface where the grains are very small. As-deposited, CdCl2-treated, Cu-treated, and (CdCl2+Cu)-treated cells were analyzed. Color-coded CL spectrum imaging maps on bevels illustrate the distribution of the T=6 K luminescence transitions through the depth of devices with unprecedented spatial resolution. The CL at the GBs and GIs is shown to vary significantlymore » from the front to the back of devices and is a sensitive function of processing. Supporting D-SIMS depth profile, TRPL lifetime, and C-V measurements are used to link the CL data to the J-V performance of devices.« less

  10. Multi-material optoelectronic fiber devices

    NASA Astrophysics Data System (ADS)

    Sorin, F.; Yan, Wei; Volpi, Marco; Page, Alexis G.; Nguyen Dang, Tung; Qu, Y.

    2017-05-01

    The recent ability to integrate materials with different optical and optoelectronic properties in prescribed architectures within flexible fibers is enabling novel opportunities for advanced optical probes, functional surfaces and smart textiles. In particular, the thermal drawing process has known a series of breakthroughs in recent years that have expanded the range of materials and architectures that can be engineered within uniform fibers. Of particular interest in this presentation will be optoelectronic fibers that integrate semiconductors electrically addressed by conducting materials. These long, thin and flexible fibers can intercept optical radiation, localize and inform on a beam direction, detect its wavelength and even harness its energy. They hence constitute ideal candidates for applications such as remote and distributed sensing, large-area optical-detection arrays, energy harvesting and storage, innovative health care solutions, and functional fabrics. To improve performance and device complexity, tremendous progresses have been made in terms of the integrated semiconductor architectures, evolving from large fiber solid-core, to sub-hundred nanometer thin-films, nano-filaments and even nanospheres. To bridge the gap between the optoelectronic fiber concept and practical applications however, we still need to improve device performance and integration. In this presentation we will describe the materials and processing approaches to realize optoelectronic fibers, as well as give a few examples of demonstrated systems for imaging as well as light and chemical sensing. We will then discuss paths towards practical applications focusing on two main points: fiber connectivity, and improving the semiconductor microstructure by developing scalable approaches to make fiber-integrated single-crystal nanowire based devices.

  11. Optoelectronic semiconductor device and method of fabrication

    DOEpatents

    Cui, Yi; Zhu, Jia; Hsu, Ching-Mei; Fan, Shanhui; Yu, Zongfu

    2014-11-25

    An optoelectronic device comprising an optically active layer that includes a plurality of domes is presented. The plurality of domes is arrayed in two dimensions having a periodicity in each dimension that is less than or comparable with the shortest wavelength in a spectral range of interest. By virtue of the plurality of domes, the optoelectronic device achieves high performance. A solar cell having high energy-conversion efficiency, improved absorption over the spectral range of interest, and an improved acceptance angle is presented as an exemplary device.

  12. Effectively Transparent Front Contacts for Optoelectronic Devices

    DOE PAGES

    Saive, Rebecca; Borsuk, Aleca M.; Emmer, Hal S.; ...

    2016-06-10

    Effectively transparent front contacts for optoelectronic devices achieve a measured transparency of up to 99.9% and a measured sheet resistance of 4.8 Ω sq-1. These 3D microscale triangular cross-section grid fingers redirect incoming photons efficiently to the active semiconductor area and can replace standard grid fingers as well as transparent conductive oxide layers in optoelectronic devices. Optoelectronic devices such as light emitting diodes, photodiodes, and solar cells play an important and expanding role in modern technology. Photovoltaics is one of the largest optoelectronic industry sectors and an ever-increasing component of the world's rapidly growing renewable carbon-free electricity generation infrastructure. Inmore » recent years, the photovoltaics field has dramatically expanded owing to the large-scale manufacture of inexpensive crystalline Si and thin film cells and modules. The current record efficiency (η = 25.6%) Si solar cell utilizes a heterostructure intrinsic thin layer (HIT) design[1] to enable increased open circuit voltage, while more mass-manufacturable solar cell architectures feature front contacts.[2, 3] Thus improved solar cell front contact designs are important for future large-scale photovoltaics with even higher efficiency.« less

  13. Small Molecule Organic Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Bakken, Nathan

    Organic optoelectronics include a class of devices synthesized from carbon containing 'small molecule' thin films without long range order crystalline or polymer structure. Novel properties such as low modulus and flexibility as well as excellent device performance such as photon emission approaching 100% internal quantum efficiency have accelerated research in this area substantially. While optoelectronic organic light emitting devices have already realized commercial application, challenges to obtain extended lifetime for the high energy visible spectrum and the ability to reproduce natural white light with a simple architecture have limited the value of this technology for some display and lighting applications. In this research, novel materials discovered from a systematic analysis of empirical device data are shown to produce high quality white light through combination of monomer and excimer emission from a single molecule: platinum(II) bis(methyl-imidazolyl)toluene chloride (Pt-17). Illumination quality achieved Commission Internationale de L'Eclairage (CIE) chromaticity coordinates (x = 0.31, y = 0.38) and color rendering index (CRI) > 75. Further optimization of a device containing Pt-17 resulted in a maximum forward viewing power efficiency of 37.8 lm/W on a plain glass substrate. In addition, accelerated aging tests suggest high energy blue emission from a halogen-free cyclometalated platinum complex could demonstrate degradation rates comparable to known stable emitters. Finally, a buckling based metrology is applied to characterize the mechanical properties of small molecule organic thin films towards understanding the deposition kinetics responsible for an elastic modulus that is both temperature and thickness dependent. These results could contribute to the viability of organic electronic technology in potentially flexible display and lighting applications. The results also provide insight to organic film growth kinetics responsible for optical

  14. Optoelectronic Devices with Complex Failure Modes

    NASA Technical Reports Server (NTRS)

    Johnston, A.

    2000-01-01

    This part of the NSREC-2000 Short Course discusses radiation effects in basic photonic devices along with effects in more complex optoelectronic devices where the overall radiation response depends on several factors, with the possibility of multiple failure modes.

  15. Optoelectronically probing the density of nanowire surface trap states to the single state limit

    NASA Astrophysics Data System (ADS)

    Dan, Yaping

    2015-02-01

    Surface trap states play a dominant role in the optoelectronic properties of nanoscale devices. Understanding the surface trap states allows us to properly engineer the device surfaces for better performance. But characterization of surface trap states at nanoscale has been a formidable challenge using the traditional capacitive techniques. Here, we demonstrate a simple but powerful optoelectronic method to probe the density of nanowire surface trap states to the single state limit. In this method, we choose to tune the quasi-Fermi level across the bandgap of a silicon nanowire photoconductor, allowing for capture and emission of photogenerated charge carriers by surface trap states. The experimental data show that the energy density of nanowire surface trap states is in a range from 109 cm-2/eV at deep levels to 1012 cm-2/eV near the conduction band edge. This optoelectronic method allows us to conveniently probe trap states of ultra-scaled nano/quantum devices at extremely high precision.

  16. Optoelectronic device with nanoparticle embedded hole injection/transport layer

    DOEpatents

    Wang, Qingwu [Chelmsford, MA; Li, Wenguang [Andover, MA; Jiang, Hua [Methuen, MA

    2012-01-03

    An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

  17. Patterning of conjugated polymers for organic optoelectronic devices.

    PubMed

    Xu, Youyong; Zhang, Fan; Feng, Xinliang

    2011-05-23

    Conjugated polymers have been attracting more and more attention because they possess various novel electrical, magnetical, and optical properties, which render them useful in modern organic optoelectronic devices. Due to their organic nature, conjugated polymers are light-weight and can be fabricated into flexible appliances. Significant research efforts have been devoted to developing new organic materials to make them competitive with their conventional inorganic counterparts. It is foreseeable that when large-scale industrial manufacture of the devices made from organic conjugated polymers is feasible, they would be much cheaper and have more functions. On one hand, in order to improve the performance of organic optoelectronic devices, it is essential to tune their surface morphologies by techniques such as patterning. On the other hand, patterning is the routine requirement for device processing. In this review, the recent progress in the patterning of conjugated polymers for high-performance optoelectronic devices is summarized. Patterning based on the bottom-up and top-down methods are introduced. Emerging new patterning strategies and future trends for conventional patterning techniques are discussed. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Radiation Effects on Optoelectronic Devices in Space Missions

    NASA Technical Reports Server (NTRS)

    Johnston, Allan H.

    2006-01-01

    Radiation degradation of optoelectronic devices is discussed, including effects on optical emitters, detectors and optocouplers. The importance of displacement damage is emphasized, including the limitations of non-ionizing energy loss (NIEL) in normalizing damage. Failures of optoelectronics in fielded space systems are discussed, along with testing and qualification methods.

  19. Recent advances in flexible and wearable organic optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Zhu, Hong; Shen, Yang; Li, Yanqing; Tang, Jianxin

    2018-01-01

    Flexible and wearable optoelectronic devices have been developing to a new stage due to their unique capacity for the possibility of a variety of wearable intelligent electronics, including bendable smartphones, foldable touch screens and antennas, paper-like displays, and curved and flexible solid-state lighting devices. Before extensive commercial applications, some issues still have to be solved for flexible and wearable optoelectronic devices. In this regard, this review concludes the newly emerging flexible substrate materials, transparent conductive electrodes, device architectures and light manipulation methods. Examples of these components applied for various kinds of devices are also summarized. Finally, perspectives about the bright future of flexible and wearable electronic devices are proposed. Project supported by the Ministry of Science and Technology of China (No. 2016YFB0400700).

  20. Method And Apparatus For Coupling Optical Elements To Optoelectronic Devices For Manufacturing Optical Transceiver Modules

    DOEpatents

    Anderson, Gene R.; Armendariz, Marcelino G.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; Giunta, Rachel Knudsen; Mitchell, Robert T.; McCormick, Frederick B.; Peterson, David W.; Rising, Merideth A.; Reber, Cathleen A.; Reysen, Bill H.

    2005-06-14

    A process is provided for aligning and connecting at least one optical fiber to at least one optoelectronic device so as to couple light between at least one optical fiber and at least one optoelectronic device. One embodiment of this process comprises the following steps: (1) holding at least one optical element close to at least one optoelectronic device, at least one optical element having at least a first end; (2) aligning at least one optical element with at least one optoelectronic device; (3) depositing a first non-opaque material on a first end of at least one optoelectronic device; and (4) bringing the first end of at least one optical element proximate to the first end of at least one optoelectronic device in such a manner that the first non-opaque material contacts the first end of at least one optoelectronic device and the first end of at least one optical element. The optical element may be an optical fiber, and the optoelectronic device may be a vertical cavity surface emitting laser. The first non-opaque material may be a UV optical adhesive that provides an optical path and mechanical stability. In another embodiment of the alignment process, the first end of at least one optical element is brought proximate to the first end of at least one optoelectronic device in such a manner that an interstitial space exists between the first end of at least one optoelectronic device and the first end of at least one optical element.

  1. Visualizing nanoscale excitonic relaxation properties of disordered edges and grain boundaries in monolayer molybdenum disulfide

    DOE PAGES

    Bao, Wei; Borys, Nicholas J.; Ko, Changhyun; ...

    2015-08-13

    The ideal building blocks for atomically thin, flexible optoelectronic and catalytic devices are two-dimensional monolayer transition metal dichalcogenide semiconductors. Although challenging for two-dimensional systems, sub-diffraction optical microscopy provides a nanoscale material understanding that is vital for optimizing their optoelectronic properties. We use the ‘Campanile’ nano-optical probe to spectroscopically image exciton recombination within monolayer MoS2 with sub-wavelength resolution (60 nm), at the length scale relevant to many critical optoelectronic processes. Moreover, synthetic monolayer MoS2 is found to be composed of two distinct optoelectronic regions: an interior, locally ordered but mesoscopically heterogeneous two-dimensional quantum well and an unexpected ~300-nm wide, energetically disorderedmore » edge region. Further, grain boundaries are imaged with sufficient resolution to quantify local exciton-quenching phenomena, and complimentary nano-Auger microscopy reveals that the optically defective grain boundary and edge regions are sulfur deficient. In conclusion, the nanoscale structure–property relationships established here are critical for the interpretation of edge- and boundary-related phenomena and the development of next-generation two-dimensional optoelectronic devices.« less

  2. Modeling Self-Heating Effects in Nanoscale Devices

    NASA Astrophysics Data System (ADS)

    Raleva, K.; Shaik, A. R.; Vasileska, D.; Goodnick, S. M.

    2017-08-01

    Accurate thermal modeling and the design of microelectronic devices and thin film structures at the micro- and nanoscales poses a challenge to electrical engineers who are less familiar with the basic concepts and ideas in sub-continuum heat transport. This book aims to bridge that gap. Efficient heat removal methods are necessary to increase device performance and device reliability. The authors provide readers with a combination of nanoscale experimental techniques and accurate modeling methods that must be employed in order to determine a device's temperature profile.

  3. Optoelectronic device

    DOEpatents

    Bonekamp, Jeffrey E.; Boven, Michelle L.; Gaston, Ryan S.

    2014-09-09

    The invention is an optoelectronic device comprising an active portion which converts light to electricity or converts electricity to light, the active portion having a front side for the transmittal of the light and a back side opposite from the front side, at least two electrical leads to the active portion to convey electricity to or from the active portion, an enclosure surrounding the active portion and through which the at least two electrical leads pass wherein the hermetically sealed enclosure comprises at the front side of the active portion a barrier material which allows for transmittal of light, one or more getter materials disposed so as to not impede the transmission of light to or from the active portion, and a contiguous gap pathway to the getter material which pathway is disposed between the active portion and the barrier material.

  4. Method of fabricating an optoelectronic device having a bulk heterojunction

    DOEpatents

    Shtein, Max [Ann Arbor, MI; Yang, Fan [Princeton, NJ; Forrest, Stephen R [Princeton, NJ

    2008-10-14

    A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.

  5. Flexible and Stretchable Optoelectronic Devices using Silver Nanowires and Graphene.

    PubMed

    Lee, Hanleem; Kim, Meeree; Kim, Ikjoon; Lee, Hyoyoung

    2016-06-01

    Many studies have accompanied the emergence of a great interest in flexible or/and stretchable devices for new applications in wearable and futuristic technology, including human-interface devices, robotic skin, and biometric devices, and in optoelectronic devices. Especially, new nanodimensional materials enable flexibility or stretchability to be brought based on their dimensionality. Here, the emerging field of flexible devices is briefly introduced using silver nanowires and graphene, which are famous nanomaterials for the use of transparent conductive electrodes, as examples, and their unique functions originating from the intrinsic property of these nanomaterials are highlighted. It is thought that this work will evoke more interest and idea exchanges in this emerging field and hopefully can trigger a breakthrough on a new type of optoelectronics and optogenetic devices in the near future. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Nanoscale wicking methods and devices

    NASA Technical Reports Server (NTRS)

    Zhou, Jijie (Inventor); Bronikowski, Michael (Inventor); Noca, Flavio (Inventor); Sansom, Elijah B. (Inventor)

    2011-01-01

    A fluid transport method and fluid transport device are disclosed. Nanoscale fibers disposed in a patterned configuration allow transport of a fluid in absence of an external power source. The device may include two or more fluid transport components having different fluid transport efficiencies. The components may be separated by additional fluid transport components, to control fluid flow.

  7. Dopant atoms as quantum components in silicon nanoscale devices

    NASA Astrophysics Data System (ADS)

    Zhao, Xiaosong; Han, Weihua; Wang, Hao; Ma, Liuhong; Li, Xiaoming; Zhang, Wang; Yan, Wei; Yang, Fuhua

    2018-06-01

    Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore's law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics. Project supported by National Key R&D Program of China (No. 2016YFA0200503).

  8. Nanoscale MOS devices: device parameter fluctuations and low-frequency noise (Invited Paper)

    NASA Astrophysics Data System (ADS)

    Wong, Hei; Iwai, Hiroshi; Liou, J. J.

    2005-05-01

    It is well-known in conventional MOS transistors that the low-frequency noise or flicker noise is mainly contributed by the trapping-detrapping events in the gate oxide and the mobility fluctuation in the surface channel. In nanoscale MOS transistors, the number of trapping-detrapping events becomes less important because of the large direct tunneling current through the ultrathin gate dielectric which reduces the probability of trapping-detrapping and the level of leakage current fluctuation. Other noise sources become more significant in nanoscale devices. The source and drain resistance noises have greater impact on the drain current noise. Significant contribution of the parasitic bipolar transistor noise in ultra-short channel and channel mobility fluctuation to the channel noise are observed. The channel mobility fluctuation in nanoscale devices could be due to the local composition fluctuation of the gate dielectric material which gives rise to the permittivity fluctuation along the channel and results in gigantic channel potential fluctuation. On the other hand, the statistical variations of the device parameters across the wafer would cause the noise measurements less accurate which will be a challenge for the applicability of analytical flicker noise model as a process or device evaluation tool for nanoscale devices. Some measures for circumventing these difficulties are proposed.

  9. Two-Dimensional Materials for Halide Perovskite-Based Optoelectronic Devices.

    PubMed

    Chen, Shan; Shi, Gaoquan

    2017-06-01

    Halide perovskites have high light absorption coefficients, long charge carrier diffusion lengths, intense photoluminescence, and slow rates of non-radiative charge recombination. Thus, they are attractive photoactive materials for developing high-performance optoelectronic devices. These devices are also cheap and easy to be fabricated. To realize the optimal performances of halide perovskite-based optoelectronic devices (HPODs), perovskite photoactive layers should work effectively with other functional materials such as electrodes, interfacial layers and encapsulating films. Conventional two-dimensional (2D) materials are promising candidates for this purpose because of their unique structures and/or interesting optoelectronic properties. Here, we comprehensively summarize the recent advancements in the applications of conventional 2D materials for halide perovskite-based photodetectors, solar cells and light-emitting diodes. The examples of these 2D materials are graphene and its derivatives, mono- and few-layer transition metal dichalcogenides (TMDs), graphdiyne and metal nanosheets, etc. The research related to 2D nanostructured perovskites and 2D Ruddlesden-Popper perovskites as efficient and stable photoactive layers is also outlined. The syntheses, functions and working mechanisms of relevant 2D materials are introduced, and the challenges to achieving practical applications of HPODs using 2D materials are also discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Optoelectronic devices utilizing materials having enhanced electronic transitions

    DOEpatents

    Black, Marcie R [Newton, MA

    2011-02-22

    An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

  11. Optoelectronic devices utilizing materials having enhanced electronic transitions

    DOEpatents

    Black, Marcie R.

    2013-04-09

    An optoelectronic device that includes a material having enhanced electronic transitions. The electronic transitions are enhanced by mixing electronic states at an interface. The interface may be formed by a nano-well, a nano-dot, or a nano-wire.

  12. A full-duplex working integrated optoelectronic device for optical interconnect

    NASA Astrophysics Data System (ADS)

    Liu, Kai; Fan, Huize; Huang, Yongqing; Duan, Xiaofeng; Wang, Qi; Ren, Xiaomin; Wei, Qi; Cai, Shiwei

    2018-05-01

    In this paper, a full-duplex working integrated optoelectronic device is proposed. It is constructed by integrating a vertical cavity surface emitting laser (VCSEL) unit above a resonant cavity enhanced photodetector (RCE-PD) unit. Analysis shows that, the VCSEL unit has a threshold current of 1 mA and a slop efficiency of 0.66 W/A at 849.7 nm, the RCE-PD unit obtains its maximal absorption quantum efficiency of 90.24% at 811 nm with a FWHM of 4 nm. Moreover, the two units of the proposed integrated device can work independently from each other. So that the proposed integrated optoelectronic device can work full-duplex. It can be applied for single fiber bidirectional optical interconnects system.

  13. Functionalized polyfluorenes for use in optoelectronic devices

    DOEpatents

    Chichak, Kelly Scott [Clifton Park, NY; Lewis, Larry Neil [Scotia, NY; Cella, James Anthony [Clifton Park, NY; Shiang, Joseph John [Niskayuna, NY

    2011-11-01

    The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

  14. Terahertz optoelectronics with surface plasmon polariton diode.

    PubMed

    Vinnakota, Raj K; Genov, Dentcho A

    2014-05-09

    The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

  15. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

    PubMed

    Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras; Coleman, Jonathan N; Strano, Michael S

    2012-11-01

    The remarkable properties of graphene have renewed interest in inorganic, two-dimensional materials with unique electronic and optical attributes. Transition metal dichalcogenides (TMDCs) are layered materials with strong in-plane bonding and weak out-of-plane interactions enabling exfoliation into two-dimensional layers of single unit cell thickness. Although TMDCs have been studied for decades, recent advances in nanoscale materials characterization and device fabrication have opened up new opportunities for two-dimensional layers of thin TMDCs in nanoelectronics and optoelectronics. TMDCs such as MoS(2), MoSe(2), WS(2) and WSe(2) have sizable bandgaps that change from indirect to direct in single layers, allowing applications such as transistors, photodetectors and electroluminescent devices. We review the historical development of TMDCs, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.

  16. Optoelectronic devices product assurance guideline for space application

    NASA Astrophysics Data System (ADS)

    Bensoussan, A.; Vanzi, M.

    2017-11-01

    New opportunities are emerging for the implementation of hardware sub-systems based on OptoElectronic Devices (OED) for space application. Since the end of this decade the main players for space systems namely designers and users including Industries, Agencies, Manufacturers and Laboratories are strongly demanding of adequate strategies to qualify and validate new optoelectronics products and sub-systems [1]. The long term space application mission will require to address either inter-satellite link (free space communication, positioning systems, tracking) or intra-satellite connectivity/flexibility/reconfigurability or high volume of data transfer between equipment installed into payload.

  17. Toward high performance nanoscale optoelectronic devices: super solar energy harvesting in single standing core-shell nanowire.

    PubMed

    Zhou, Jian; Wu, Yonggang; Xia, Zihuan; Qin, Xuefei; Zhang, Zongyi

    2017-11-27

    Single nanowire solar cells show great promise for next-generation photovoltaics and for powering nanoscale devices. Here, we present a detailed study of light absorption in a single standing semiconductor-dielectric core-shell nanowire (CSNW). We find that the CSNW structure can not only concentrate the incident light into the structure, but also confine most of the concentrated light to the semiconductor core region, which boosts remarkably the light absorption cross-section of the semiconductor core. The CSNW can support multiple higher-order HE modes, as well as Fabry-Pérot (F-P) resonance, compared to the bare nanowire (BNW). Overlapping of the adjacent higher-order HE modes results in broadband light absorption enhancement in the solar radiation spectrum. Results based on detailed balance analysis demonstrate that the super light concentration of the single CSNW gives rise to higher short-circuit current and open-circuit voltage, and thus higher apparent power conversion efficiency (3644.2%), which goes far beyond that of the BNW and the Shockley-Queisser limit that restricts the performance of a planar counterparts. Our study shows that the single CSNW can be a promising platform for construction of high performance nanoscale photodetectors, nanoelectronic power sources, super miniature cells, and diverse integrated nanosystems.

  18. Optoelectronic devices, plasmonics, and photonics with topological insulators

    NASA Astrophysics Data System (ADS)

    Politano, Antonio; Viti, Leonardo; Vitiello, Miriam S.

    2017-03-01

    Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics, and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications, and the challenges of the emerging fields of topological photonics and thermo-plasmonics are discussed.

  19. Conjugated polymers and their use in optoelectronic devices

    DOEpatents

    Marks, Tobin J.; Guo, Xugang; Zhou, Nanjia; Chang, Robert P. H.; Drees, Martin; Facchetti, Antonio

    2016-10-18

    The present invention relates to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The present compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The present compounds can have good solubility in common solvents enabling device fabrication via solution processes.

  20. Current nanoscience and nanoengineering at the Center for Nanoscale Science and Engineering

    NASA Astrophysics Data System (ADS)

    Hermann, A. M.; Singh, R. S.; Singh, V. P.

    2006-07-01

    The Center for Nanoscale Science and Engineering (CeNSE) at the University of Kentucky is a multidisciplinary group of faculty, students, and staff, with a shared vision and cutting-edge research facilities to study and develop materials and devices at the nanoscale. Current research projects at CeNSE span a number of diverse nanoscience thrusts in bio- engineering and medicine (nanosensors and nanoelectrodes, nanoparticle-based drug delivery), electronics (nanolithography, molecular electronics, nanotube FETs), nanotemplates for electronics and gas sensors (functionalization of carbon nanotubes, aligned carbon nanotube structures for gate-keeping, e-beam lithography with nanoscale precision), and nano--optoelectronics (nanoscale photonics for laser communications, quantum confinement in photovoltaic devices, and nanostructured displays). This paper provides glimpses of this research and future directions.

  1. Organic Optoelectronic Devices Employing Small Molecules

    NASA Astrophysics Data System (ADS)

    Fleetham, Tyler Blain

    Organic optoelectronic devices have remained a research topic of great interest over the past two decades, particularly in the development of efficient organic photovoltaics (OPV) and organic light emitting diodes (OLED). In order to improve the efficiency, stability, and materials variety for organic optoelectronic devices a number of emitting materials, absorbing materials, and charge transport materials were developed and employed in a device setting. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. Two major approaches were taken to enhance the efficiency of small molecule based OPVs: developing material with higher open circuit voltages or improved device structures which increased short circuit current. To explore the factors affecting the open circuit voltage (VOC) in OPVs, molecular structures were modified to bring VOC closer to the effective bandgap, DeltaE DA, which allowed the achievement of 1V VOC for a heterojunction of a select Ir complex with estimated exciton energy of only 1.55eV. Furthermore, the development of anode interfacial layer for exciton blocking and molecular templating provide a general approach for enhancing the short circuit current. Ultimately, a 5.8% PCE was achieved in a single heterojunction of C60 and a ZnPc material prepared in a simple, one step, solvent free, synthesis. OLEDs employing newly developed deep blue emitters based on cyclometalated complexes were demonstrated. Ultimately, a peak EQE of 24.8% and nearly perfect blue emission of (0.148,0.079) was achieved from PtON7dtb, which approaches the maximum attainable performance from a blue OLED. Furthermore, utilizing the excimer formation properties of square-planar Pt complexes, highly efficient and stable white devices employing a single emissive material were demonstrated. A peak EQE of over 20% for pure white color (0.33,0.33) and 80 CRI was achieved with the tridentate Pt complex, Pt

  2. Materials for optoelectronic devices

    DOEpatents

    Shiang, Joseph John; Smigelski, Jr., Paul Michael

    2015-01-27

    Energy efficient optoelectronic devices include an electroluminescent layer containing a polymer made up of structural units of formula I and II; ##STR00001## wherein R.sup.1 and R.sup.2 are independently C.sub.22-44 hydrocarbyl, C.sub.22-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, oxaalkylaryl, or a combination thereof; R.sup.3 and R.sup.4 are independently H, C.sub.1-44 hydrocarbyl or C.sub.1-44 hydrocarbyl containing one or more S, N, O, P, or Si atoms, or R.sup.3 and R.sup.4, taken together, form a C.sub.2-10 monocyclic or bicyclic ring containing up to three S, N, O, P, or Si heteroatoms; and X is S, Se, or a combination thereof.

  3. Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device.

    PubMed

    Park, Sangsu; Noh, Jinwoo; Choo, Myung-Lae; Sheri, Ahmad Muqeem; Chang, Man; Kim, Young-Bae; Kim, Chang Jung; Jeon, Moongu; Lee, Byung-Geun; Lee, Byoung Hun; Hwang, Hyunsang

    2013-09-27

    Efforts to develop scalable learning algorithms for implementation of networks of spiking neurons in silicon have been hindered by the considerable footprints of learning circuits, which grow as the number of synapses increases. Recent developments in nanotechnologies provide an extremely compact device with low-power consumption.In particular, nanoscale resistive switching devices (resistive random-access memory (RRAM)) are regarded as a promising solution for implementation of biological synapses due to their nanoscale dimensions, capacity to store multiple bits and the low energy required to operate distinct states. In this paper, we report the fabrication, modeling and implementation of nanoscale RRAM with multi-level storage capability for an electronic synapse device. In addition, we first experimentally demonstrate the learning capabilities and predictable performance by a neuromorphic circuit composed of a nanoscale 1 kbit RRAM cross-point array of synapses and complementary metal-oxide-semiconductor neuron circuits. These developments open up possibilities for the development of ubiquitous ultra-dense, ultra-low-power cognitive computers.

  4. Thermoelectric efficiency of nanoscale devices in the linear regime

    NASA Astrophysics Data System (ADS)

    Bevilacqua, G.; Grosso, G.; Menichetti, G.; Pastori Parravicini, G.

    2016-12-01

    We study quantum transport through two-terminal nanoscale devices in contact with two particle reservoirs at different temperatures and chemical potentials. We discuss the general expressions controlling the electric charge current, heat currents, and the efficiency of energy transmutation in steady conditions in the linear regime. With focus in the parameter domain where the electron system acts as a power generator, we elaborate workable expressions for optimal efficiency and thermoelectric parameters of nanoscale devices. The general concepts are set at work in the paradigmatic cases of Lorentzian resonances and antiresonances, and the encompassing Fano transmission function: the treatments are fully analytic, in terms of the trigamma functions and Bernoulli numbers. From the general curves here reported describing transport through the above model transmission functions, useful guidelines for optimal efficiency and thermopower can be inferred for engineering nanoscale devices in energy regions where they show similar transmission functions.

  5. Growing perovskite into polymers for easy-processable optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

    2015-01-01

    Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition.

  6. Growing perovskite into polymers for easy-processable optoelectronic devices

    PubMed Central

    Masi, Sofia; Colella, Silvia; Listorti, Andrea; Roiati, Vittoria; Liscio, Andrea; Palermo, Vincenzo; Rizzo, Aurora; Gigli, Giuseppe

    2015-01-01

    Here we conceive an innovative nanocomposite to endow hybrid perovskites with the easy processability of polymers, providing a tool to control film quality and material crystallinity. We verify that the employed semiconducting polymer, poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), controls the self-assembly of CH3NH3PbI3 (MAPbI3) crystalline domains and favors the deposition of a very smooth and homogenous layer in one straightforward step. This idea offers a new paradigm for the implementation of polymer/perovskite nanocomposites towards versatile optoelectronic devices combined with the feasibility of mass production. As a proof-of-concept we propose the application of such nanocomposite in polymer solar cell architecture, demonstrating a power conversion efficiency up to 3%, to date the highest reported for MEH-PPV. On-purpose designed polymers are expected to suit the nanocomposite properties for the integration in diverse optoelectronic devices via facile processing condition. PMID:25579988

  7. Phase aggregation and morphology effects on nanocarbon optoelectronics.

    PubMed

    Xie, Yu; Lohrman, Jessica; Ren, Shenqiang

    2014-12-05

    Controllable morphology and interfacial interactions within bulk heterojunction nanostructures show significant effects on optoelectronic device applications. In this study, a nanocarbon heterojunction, consisting of single-walled carbon nanotubes (s-SWCNTs) and fullerene derivatives, is reported by assembling/blending its structures through solution-based processes. A uniform and dense graphene oxide hole transport layer is used to facilitate the photoconversion at a near infrared (NIR) wavelength. Effective interfacial interaction between the s-SWCNTs and fullerene is suggested by the redshifted photoabsorption and nanoscale/micron-scale fluorescence, which is associated with self-assembled nanocarbon morphology.

  8. Quantum mechanical modeling the emission pattern and polarization of nanoscale light emitting diodes.

    PubMed

    Wang, Rulin; Zhang, Yu; Bi, Fuzhen; Frauenheim, Thomas; Chen, GuanHua; Yam, ChiYung

    2016-07-21

    Understanding of the electroluminescence (EL) mechanism in optoelectronic devices is imperative for further optimization of their efficiency and effectiveness. Here, a quantum mechanical approach is formulated for modeling the EL processes in nanoscale light emitting diodes (LED). Based on non-equilibrium Green's function quantum transport equations, interactions with the electromagnetic vacuum environment are included to describe electrically driven light emission in the devices. The presented framework is illustrated by numerical simulations of a silicon nanowire LED device. EL spectra of the nanowire device under different bias voltages are obtained and, more importantly, the radiation pattern and polarization of optical emission can be determined using the current approach. This work is an important step forward towards atomistic quantum mechanical modeling of the electrically induced optical response in nanoscale systems.

  9. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-01-05

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  10. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2014-07-08

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  11. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

    DOEpatents

    Wanlass, Mark W.; Carapella, Jeffrey J.

    2016-03-22

    Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

  12. Heterogeneous integration based on low-temperature bonding for advanced optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Higurashi, Eiji

    2018-04-01

    Heterogeneous integration is an attractive approach to manufacturing future optoelectronic devices. Recent progress in low-temperature bonding techniques such as plasma activation bonding (PAB) and surface-activated bonding (SAB) enables a new approach to integrating dissimilar materials for a wide range of photonics applications. In this paper, low-temperature direct bonding and intermediate layer bonding techniques are focused, and their state-of-the-art applications in optoelectronic devices are reviewed. First, we describe the room-temperature direct bonding of Ge/Ge and Ge/Si wafers for photodetectors and of GaAs/SiC wafers for high-power semiconductor lasers. Then, we describe low-temperature intermediate layer bonding using Au and lead-free Sn-3.0Ag-0.5Cu solders for optical sensors and MEMS packaging.

  13. Diffusion of excitons in materials for optoelectronic device applications

    NASA Astrophysics Data System (ADS)

    Singh, Jai; Narayan, Monishka Rita; Ompong, David

    2015-06-01

    The diffusion of singlet excitonsis known to occur through the Förster resonance energy transfer (FRET) mechanism and that of singlet and triplet excitonscan occur through the Dexter carrier transfer mechanism. It is shown here that if a material possesses the strong exciton-spin-orbit-photon interaction then triplet excitonscan also be transported /diffused through a mechanism like FRET. The theory is applicable to the diffusion of excitonsin optoelectronic devices like organic solar cells, organic light emitting devices and inorganic scintillators.

  14. Nanoparticle-Enhanced Silver-Nanowire Plasmonic Electrodes for High-Performance Organic Optoelectronic Devices.

    PubMed

    Kim, Taehyo; Kang, Saewon; Heo, Jungwoo; Cho, Seungse; Kim, Jae Won; Choe, Ayoung; Walker, Bright; Shanker, Ravi; Ko, Hyunhyub; Kim, Jin Young

    2018-05-21

    Improved performance in plasmonic organic solar cells (OSCs) and organic light-emitting diodes (OLEDs) via strong plasmon-coupling effects generated by aligned silver nanowire (AgNW) transparent electrodes decorated with core-shell silver-silica nanoparticles (Ag@SiO 2 NPs) is demonstrated. NP-enhanced plasmonic AgNW (Ag@SiO 2 NP-AgNW) electrodes enable substantially enhanced radiative emission and light absorption efficiency due to strong hybridized plasmon coupling between localized surface plasmons (LSPs) and propagating surface plasmon polaritons (SPPs) modes, which leads to improved device performance in organic optoelectronic devices (OODs). The discrete dipole approximation (DDA) calculation of the electric field verifies a strongly enhanced plasmon-coupling effect caused by decorating core-shell Ag@SiO 2 NPs onto the AgNWs. Notably, an electroluminescence efficiency of 25.33 cd A -1 (at 3.2 V) and a power efficiency of 25.14 lm W -1 (3.0 V) in OLEDs, as well as a power conversion efficiency (PCE) value of 9.19% in OSCs are achieved using hybrid Ag@SiO 2 NP-AgNW films. These are the highest values reported to date for optoelectronic devices based on AgNW electrodes. This work provides a new design platform to fabricate high-performance OODs, which can be further explored in various plasmonic and optoelectronic devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Magnetization switching schemes for nanoscale three-terminal spintronics devices

    NASA Astrophysics Data System (ADS)

    Fukami, Shunsuke; Ohno, Hideo

    2017-08-01

    Utilizing spintronics-based nonvolatile memories in integrated circuits offers a promising approach to realize ultralow-power and high-performance electronics. While two-terminal devices with spin-transfer torque switching have been extensively developed nowadays, there has been a growing interest in devices with a three-terminal structure. Of primary importance for applications is the efficient manipulation of magnetization, corresponding to information writing, in nanoscale devices. Here we review the studies of current-induced domain wall motion and spin-orbit torque-induced switching, which can be applied to the write operation of nanoscale three-terminal spintronics devices. For domain wall motion, the size dependence of device properties down to less than 20 nm will be shown and the underlying mechanism behind the results will be discussed. For spin-orbit torque-induced switching, factors governing the threshold current density and strategies to reduce it will be discussed. A proof-of-concept demonstration of artificial intelligence using an analog spin-orbit torque device will also be reviewed.

  16. Organic photosensitive optoelectronic device having a phenanthroline exciton blocking layer

    DOEpatents

    Thompson, Mark E [Anaheim Hills, CA; Li, Jian [Los Angeles, CA; Forrest, Stephen [Princeton, NJ; Rand, Barry [Princeton, NJ

    2011-02-22

    An organic photosensitive optoelectronic device, having an anode, a cathode, and an organic blocking layer between the anode and the cathode is described, wherein the blocking layer comprises a phenanthroline derivative, and at least partially blocks at least one of excitons, electrons, and holes.

  17. Water/alcohol soluble conjugated polymers as highly efficient electron transporting/injection layer in optoelectronic devices.

    PubMed

    Huang, Fei; Wu, Hongbin; Cao, Yong

    2010-07-01

    Water/alcohol soluble conjugated polymers (WSCPs) can be processed from water or other polar solvents, which offer good opportunities to avoid interfacial mixing upon fabrication of multilayer polymer optoelectronic devices by solution processing, and can dramatically improve charge injection from high work-function metal cathode resulting in greatly enhancement of the device performance. In this critical review, the authors provide a brief review of recent developments in this field, including the materials design, functional principles, and their unique applications as interface modification layer in solution-processable multilayer optoelectronic devices (135 references).

  18. Nano-scale engineering using lead chalcogenide nanocrystals for opto-electronic applications

    NASA Astrophysics Data System (ADS)

    Xu, Fan

    Colloidal quantum dots (QDs) or nanocrystals of inorganic semiconductors exhibit exceptional optoelectronic properties such as tunable band-gap, high absorption cross-section and narrow emission spectra. This thesis discusses the characterizations and physical properties of lead-chalcogenide nanocrystals, their assembly into more complex nanostructures and applications in solar cells and near-infrared light-emitting devices. In the first part of this work, we demonstrate that the band edge emission of PbS quantum dots can be tuned from the visible to the mid-infrared region through size control, while the self-attachment of PbS nanocrystals can lead to the formation of 1-D nanowires, 2-D quantum dot monolayers and 3-D quantum dot solids. In particular, the assembly of closely-packed quantum dot solids has attracted enormous attention. A series of distinctive optoelectronic properties has been observed, such as superb multiple exciton generation efficiencies, efficient hot-electron transfer and cold-exciton recycling. Since the surfactant determines the quantum dot surface passivation and inter dot electronic coupling, we examine the influence of different cross-linking surfactants on the optoelectronic properties of the quantum dot solids. Then, we discuss the ability to tune the quantum dot band-gap combined with the controllable assembly of lead-chalcogenide quantum dots, which opens new possibilities to engineer the properties of quantum dot solids. The PbS and PbSe quantum dot cascade structures and PbS/PbSe quantum dot heterojunctions are assembled using the layer-by-layer deposition method. We show that exciton funnelling and trap state-bound exciton recycling in the quantum dot cascade structure dramatically enhances the quantum dots photoluminescence. Moreover, we show that both type-I and type-II PbS/PbSe quantum dot heterojunctions can be assembled by carefully choosing the quantum dot sizes. In type-I heterojunctions, the excited electron-hole pairs tend

  19. Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials.

    PubMed

    Wang, Feng; Wang, Zhenxing; Jiang, Chao; Yin, Lei; Cheng, Ruiqing; Zhan, Xueying; Xu, Kai; Wang, Fengmei; Zhang, Yu; He, Jun

    2017-09-01

    2D layered semiconducting materials (2DLSMs) represent the thinnest semiconductors, holding many novel properties, such as the absence of surface dangling bonds, sizable band gaps, high flexibility, and ability of artificial assembly. With the prospect of bringing revolutionary opportunities for electronic and optoelectronic applications, 2DLSMs have prospered over the past twelve years. From materials preparation and property exploration to device applications, 2DLSMs have been extensively investigated and have achieved great progress. However, there are still great challenges for high-performance devices. In this review, we provide a brief overview on the recent breakthroughs in device optimization based on 2DLSMs, particularly focussing on three aspects: device configurations, basic properties of channel materials, and heterostructures. The effects from device configurations, i.e., electrical contacts, dielectric layers, channel length, and substrates, are discussed. After that, the affect of the basic properties of 2DLSMs on device performance is summarized, including crystal defects, crystal symmetry, doping, and thickness. Finally, we focus on heterostructures based on 2DLSMs. Through this review, we try to provide a guide to improve electronic and optoelectronic devices of 2DLSMs for achieving practical device applications in the future. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Multiscale modeling of nanostructured ZnO based devices for optoelectronic applications: Dynamically-coupled structural fields, charge, and thermal transport processes

    NASA Astrophysics Data System (ADS)

    Abdullah, Abdulmuin; Alqahtani, Saad; Nishat, Md Rezaul Karim; Ahmed, Shaikh; SIU Nanoelectronics Research Group Team

    Recently, hybrid ZnO nanostructures (such as ZnO deposited on ZnO-alloys, Si, GaN, polymer, conducting oxides, and organic compounds) have attracted much attention for their possible applications in optoelectronic devices (such as solar cells, light emitting and laser diodes), as well as in spintronics (such as spin-based memory, and logic). However, efficiency and performance of these hybrid ZnO devices strongly depend on an intricate interplay of complex, nonlinear, highly stochastic and dynamically-coupled structural fields, charge, and thermal transport processes at different length and time scales, which have not yet been fully assessed experimentally. In this work, we study the effects of these coupled processes on the electronic and optical emission properties in nanostructured ZnO devices. The multiscale computational framework employs the atomistic valence force-field molecular mechanics, models for linear and non-linear polarization, the 8-band sp3s* tight-binding models, and coupling to a TCAD toolkit to determine the terminal properties of the device. A series of numerical experiments are performed (by varying different nanoscale parameters such as size, geometry, crystal cut, composition, and electrostatics) that mainly aim to improve the efficiency of these devices. Supported by the U.S. National Science Foundation Grant No. 1102192.

  1. Method of fabricating an optoelectronic device having a bulk heterojunction

    DOEpatents

    Shtein, Max [Princeton, NJ; Yang, Fan [Princeton, NJ; Forrest, Stephen R [Princeton, NJ

    2008-09-02

    A method of fabricating an organic optoelectronic device having a bulk heterojunction comprises the steps of: depositing a first layer over a first electrode by organic vapor phase deposition, wherein the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer, wherein the interface of the second layer on the first layer forms a bulk heterojunction; and depositing a second electrode over the second layer to form the optoelectronic device. In another embodiment, a first layer having protrusions is deposited over the first electrode, wherein the first layer comprises a first organic small molecule material. For example, when the first layer is an electron donor layer, the first electrode is an anode, the second layer is an electron acceptor layer, and the second electrode is a cathode. As a further example, when the first layer is an electron acceptor layer, the first electrode is a cathode, the second layer is an electron donor layer, and the second electrode is an anode.

  2. Multifunctional graphene optoelectronic devices capable of detecting and storing photonic signals.

    PubMed

    Jang, Sukjae; Hwang, Euyheon; Lee, Youngbin; Lee, Seungwoo; Cho, Jeong Ho

    2015-04-08

    The advantages of graphene photodetectors were utilized to design a new multifunctional graphene optoelectronic device. Organic semiconductors, gold nanoparticles (AuNPs), and graphene were combined to fabricate a photodetecting device with a nonvolatile memory function for storing photonic signals. A pentacene organic semiconductor acted as a light absorption layer in the device and provided a high hole photocurrent to the graphene channel. The AuNPs, positioned between the tunneling and blocking dielectric layers, acted as both a charge trap layer and a plasmonic light scatterer, which enable storing of the information about the incident light. The proposed pentacene-graphene-AuNP hybrid photodetector not only performed well as a photodetector in the visible light range, it also was able to store the photonic signal in the form of persistent current. The good photodetection performance resulted from the plasmonics-enabled enhancement of the optical absorption and from the photogating mechanisms in the pentacene. The device provided a photoresponse that depended on the wavelength of incident light; therefore, the signal information (both the wavelength and intensity) of the incident light was effectively committed to memory. The simple process of applying a negative pulse gate voltage could then erase the programmed information. The proposed photodetector with the capacity to store a photonic signal in memory represents a significant step toward the use of graphene in optoelectronic devices.

  3. Fused thiophene-based conjugated polymers and their use in optoelectronic devices

    DOEpatents

    Facchetti, Antonio; Marks, Tobin J; Takai, Atsuro; Seger, Mark; Chen, Zhihua

    2015-11-03

    The present teachings relate to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

  4. Enhancement of sun-tracking with optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Wu, Jiunn-Chi

    2015-09-01

    Sun-tracking is one of the most challenging tasks in implementing CPV. In order to justify the additional complexity of sun-tracking, careful assessment of performance of CPV by monitoring the performance of sun-tracking is vital. Measurement of accuracy of sun-tracking is one of the important tasks in an outdoor test. This study examines techniques with three optoelectronic devices (i.e. position sensitive device (PSD), CCD and webcam). Outdoor measurements indicated that during sunny days (global horizontal insolation (GHI) > 700 W/m2), three devices recorded comparable tracking accuracy of 0.16˜0.3°. The method using a PSD has fastest sampling rate and is able to detect the sun's position without additional image processing. Yet, it cannot identify the sunlight effectively during low insolation. The techniques with a CCD and a webcam enhance the accuracy of centroid of sunlight via the optical lens and image processing. The image quality acquired using a webcam and a CCD is comparable but the webcam is more affordable than that of CCD because it can be assembled with consumer-graded products.

  5. Direct Photolithography on Molecular Crystals for High Performance Organic Optoelectronic Devices.

    PubMed

    Yao, Yifan; Zhang, Lei; Leydecker, Tim; Samorì, Paolo

    2018-05-23

    Organic crystals are generated via the bottom-up self-assembly of molecular building blocks which are held together through weak noncovalent interactions. Although they revealed extraordinary charge transport characteristics, their labile nature represents a major drawback toward their integration in optoelectronic devices when the use of sophisticated patterning techniques is required. Here we have devised a radically new method to enable the use of photolithography directly on molecular crystals, with a spatial resolution below 300 nm, thereby allowing the precise wiring up of multiple crystals on demand. Two archetypal organic crystals, i.e., p-type 2,7-diphenyl[1]benzothieno[3,2- b][1]benzothiophene (Dph-BTBT) nanoflakes and n-type N, N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) nanowires, have been exploited as active materials to realize high-performance top-contact organic field-effect transistors (OFETs), inverter and p-n heterojunction photovoltaic devices supported on plastic substrate. The compatibility of our direct photolithography technique with organic molecular crystals is key for exploiting the full potential of organic electronics for sophisticated large-area devices and logic circuitries, thus paving the way toward novel applications in plastic (opto)electronics.

  6. Ultrafast characterization of optoelectronic devices and systems

    NASA Astrophysics Data System (ADS)

    Zheng, Xuemei

    The recent fast growth in high-speed electronics and optoelectronics has placed demanding requirements on testing tools. Electro-optic (EO) sampling is a well-established technique for characterization of high-speed electronic and optoelectronic devices and circuits. However, with the progress in device miniaturization, lower power consumption (smaller signal), and higher throughput (higher clock rate), EO sampling also needs to be updated, accordingly, towards better signal-to-noise ratio (SNR) and sensitivity, without speed sacrifice. In this thesis, a novel EO sampler with a single-crystal organic 4-dimethylamino-N-methy-4-stilbazolium tosylate (DAST) as the EO sensor is developed. The system exhibits sub-picosecond temporal resolution, sub-millivolt sensitivity, and a 10-fold improvement on SNR, compared with its LiTaO3 counterpart. The success is attributed to the very high EO coefficient, the very low dielectric constant, and the fast response, coming from the major contribution of the pi-electrons in DAST. With the advance of ultrafast laser technology, low-noise and compact femtosecond fiber lasers have come to maturation and become light-source options for ultrafast metrology systems. We have successfully integrated a femtosecond erbium-doped-fiber laser into an EO sampler, making the system compact and very reliable. The fact that EO sampling is essentially an impulse-response measurement process, requires integration of ultrashort (sub-picosecond) impulse generation network with the device under test. We have implemented a reliable lift-off and transfer technique in order to obtain epitaxial-quality freestanding low-temperature-grown GaAs (LT-GaAs) thin-film photo-switches, which can be integrated with many substrates. The photoresponse of our freestanding LT-GaAs devices was thoroughly characterized with the help of our EO sampler. As fast as 360 fs full-width-at-half-maximum (FWHM) and >1 V electrical pulses were obtained, with quantum efficiency

  7. Optoelectronic device for the measurement of the absolute linear position in the micrometric displacement range

    NASA Astrophysics Data System (ADS)

    Morlanes, Tomas; de la Pena, Jose L.; Sanchez-Brea, Luis M.; Alonso, Jose; Crespo, Daniel; Saez-Landete, Jose B.; Bernabeu, Eusebio

    2005-07-01

    In this work, an optoelectronic device that provides the absolute position of a measurement element with respect to a pattern scale upon switch-on is presented. That means that there is not a need to perform any kind of transversal displacement after the startup of the system. The optoelectronic device is based on the process of light propagation passing through a slit. A light source with a definite size guarantees the relation of distances between the different elements that constitute our system and allows getting a particular optical intensity profile that can be measured by an electronic post-processing device providing the absolute location of the system with a resolution of 1 micron. The accuracy of this measuring device is restricted to the same limitations of any incremental position optical encoder.

  8. Features of the piezo-phototronic effect on optoelectronic devices based on wurtzite semiconductor nanowires.

    PubMed

    Yang, Qing; Wu, Yuanpeng; Liu, Ying; Pan, Caofeng; Wang, Zhong Lin

    2014-02-21

    The piezo-phototronic effect, a three way coupling effect of piezoelectric, semiconductor and photonic properties in non-central symmetric semiconductor materials, utilizing the piezo-potential as a "gate" voltage to tune the charge transport/generation/recombination and modulate the performance of optoelectronic devices, has formed a new field and attracted lots of interest recently. The mechanism was verified in various optoelectronic devices such as light emitting diodes (LEDs), photodetectors and solar cells etc. The fast development and dramatic increasing interest in the piezo-phototronic field not only demonstrate the way the piezo-phototronic effects work, but also indicate the strong need for further research in the physical mechanism and potential applications. Furthermore, it is important to distinguish the contribution of the piezo-phototronic effect from other factors induced by external strain such as piezoresistance, band shifting or contact area change, which also affect the carrier behaviour and device performance. In this perspective, we review our recent progress on piezo-phototronics and especially focus on pointing out the features of piezo-phototronic effect in four aspects: I-V characteristics; c-axis orientation; influence of illumination; and modulation of carrier behaviour. Finally we proposed several criteria for describing the contribution made by the piezo-phototronic effect to the performance of optoelectronic devices. This systematic analysis and comparison will not only help give an in-depth understanding of the piezo-phototronic effect, but also work as guide for the design of devices in related areas.

  9. Solution growth of single crystal methylammonium lead halide perovskite nanostructures for optoelectronic and photovoltaic applications.

    PubMed

    Fu, Yongping; Meng, Fei; Rowley, Matthew B; Thompson, Blaise J; Shearer, Melinda J; Ma, Dewei; Hamers, Robert J; Wright, John C; Jin, Song

    2015-05-06

    Understanding crystal growth and improving material quality is important for improving semiconductors for electronic, optoelectronic, and photovoltaic applications. Amidst the surging interest in solar cells based on hybrid organic-inorganic lead halide perovskites and the exciting progress in device performance, improved understanding and better control of the crystal growth of these perovskites could further boost their optoelectronic and photovoltaic performance. Here, we report new insights on the crystal growth of the perovskite materials, especially crystalline nanostructures. Specifically, single crystal nanowires, nanorods, and nanoplates of methylammonium lead halide perovskites (CH3NH3PbI3 and CH3NH3PbBr3) are successfully grown via a dissolution-recrystallization pathway in a solution synthesis from lead iodide (or lead acetate) films coated on substrates. These single crystal nanostructures display strong room-temperature photoluminescence and long carrier lifetime. We also report that a solid-liquid interfacial conversion reaction can create a highly crystalline, nanostructured MAPbI3 film with micrometer grain size and high surface coverage that enables photovoltaic devices with a power conversion efficiency of 10.6%. These results suggest that single-crystal perovskite nanostructures provide improved photophysical properties that are important for fundamental studies and future applications in nanoscale optoelectronic and photonic devices.

  10. Extreme Radiation Hardness and Space Qualification of AlGaN Optoelectronic Devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sun, Ke-Xun; Balakrishnan, Kathik; Hultgren, Eric

    2010-09-21

    Unprecedented radiation hardness and environment robustness are required in the new generation of high energy density physics (HEDP) experiments and deep space exploration. National Ignition Facility (NIF) break-even shots will have a neutron yield of 1015 or higher. The Europa Jupiter System Mission (EJSM) mission instruments will be irradiated with a total fluence of 1012 protons/cm2 during the space journey. In addition, large temperature variations and mechanical shocks are expected in these applications under extreme conditions. Hefty radiation and thermal shields are required for Si and GaAs based electronics and optoelectronics devices. However, for direct illumination and imaging applications, shieldingmore » is not a viable option. It is an urgent task to search for new semiconductor technologies and to develop radiation hard and environmentally robust optoelectronic devices. We will report on our latest systematic experimental studies on radiation hardness and space qualifications of AlGaN optoelectronic devices: Deep UV Light Emitting Diodes (DUV LEDs) and solarblind UV Photodiodes (PDs). For custom designed AlGaN DUV LEDs with a central emission wavelength of 255 nm, we have demonstrated its extreme radiation hardness up to 2x1012 protons/cm2 with 63.9 MeV proton beams. We have demonstrated an operation lifetime of over 26,000 hours in a nitrogen rich environment, and 23,000 hours of operation in vacuum without significant power drop and spectral shift. The DUV LEDs with multiple packaging styles have passed stringent space qualifications with 14 g random vibrations, and 21 cycles of 100K temperature cycles. The driving voltage, current, emission spectra and optical power (V-I-P) operation characteristics exhibited no significant changes after the space environmental tests. The DUV LEDs will be used for photoelectric charge management in space flights. For custom designed AlGaN UV photodiodes with a central response wavelength of 255 nm, we have

  11. Oxide semiconductors for organic opto-electronic devices

    NASA Astrophysics Data System (ADS)

    Sigdel, Ajaya K.

    In this dissertation, I have introduced various concepts on the modulations of various surface, interface and bulk opto-electronic properties of ZnO based semiconductor for charge transport, charge selectivity and optimal device performance. I have categorized transparent semiconductors into two sub groups depending upon their role in a device. Electrodes, usually 200 to 500 nm thick, optimized for good transparency and transporting the charges to the external circuit. Here, the electrical conductivity in parallel direction to thin film, i.e bulk conductivity is important. And contacts, usually 5 to 50 nm thick, are optimized in case of solar cells for providing charge selectivity and asymmetry to manipulate the built in field inside the device for charge separation and collection. Whereas in Organic LEDs (OLEDs), contacts provide optimum energy level alignment at organic oxide interface for improved charge injections. For an optimal solar cell performance, transparent electrodes are designed with maximum transparency in the region of interest to maximize the light to pass through to the absorber layer for photo-generation, plus they are designed for minimum sheet resistance for efficient charge collection and transport. As such there is need for material with high conductivity and transparency. Doping ZnO with some common elements such as B, Al, Ga, In, Ge, Si, and F result in n-type doping with increase in carriers resulting in high conductivity electrode, with better or comparable opto-electronic properties compared to current industry-standard indium tin oxide (ITO). Furthermore, improvement in mobility due to improvement on crystallographic structure also provide alternative path for high conductivity ZnO TCOs. Implementing these two aspects, various studies were done on gallium doped zinc oxide (GZO) transparent electrode, a very promising indium free electrode. The dynamics of the superimposed RF and DC power sputtering was utilized to improve the

  12. Growth and Characterisation of GaAs/AlGaAs Core-shell Nanowires for Optoelectronic Device Applications

    NASA Astrophysics Data System (ADS)

    Jiang, Nian

    III-V semiconductor nanowires have been investigated as key components for future electronic and optoelectronic devices and systems due to their direct band gap and high electron mobility. Amongst the III-V semiconductors, the planar GaAs material system has been extensively studied and used in industries. Accordingly, GaAs nanowires are the prime candidates for nano-scale devices. However, the electronic performance of GaAs nanowires has yet to match that of state-of-the-art planar GaAs devices. The present deficiency of GaAs nanowires is typically attributed to the large surface-to- volume ratio and the tendency for non-radiative recombination centres to form at the surface. The favoured solution of this problem is by coating GaAs nanowires with AlGaAs shells, which replaces the GaAs surface with GaAs/AlGaAs interface. This thesis presents a systematic study of GaAs/AlGaAs core-shell nanowires grown by metal organic chemical vapour deposition (MOCVD), including understanding the growth, and characterisation of their structural and optical properties. The structures of the nanowires were mainly studied by scanning electron microscopy and transmis- sion electron microscopy (TEM). A procedure of microtomy was developed to prepare the cross-sectional samples for the TEM studies. The optical properties were charac- terised by photoluminescence (PL) spectroscopy. Carrier lifetimes were measured by time-resolved PL. The growth of AlGaAs shell was optimised to obtain the best optical properties, e.g. the strongest PL emission and the longest minority carrier lifetimes. (Abstract shortened by ProQuest.).

  13. Optical modeling based on mean free path calculations for quantum dot phosphors applied to optoelectronic devices.

    PubMed

    Shin, Min-Ho; Kim, Hyo-Jun; Kim, Young-Joo

    2017-02-20

    We proposed an optical simulation model for the quantum dot (QD) nanophosphor based on the mean free path concept to understand precisely the optical performance of optoelectronic devices. A measurement methodology was also developed to get the desired optical characteristics such as the mean free path and absorption spectra for QD nanophosphors which are to be incorporated into the simulation. The simulation results for QD-based white LED and OLED displays show good agreement with the experimental values from the fabricated devices in terms of spectral power distribution, chromaticity coordinate, CCT, and CRI. The proposed simulation model and measurement methodology can be applied easily to the design of lots of optoelectronics devices using QD nanophosphors to obtain high efficiency and the desired color characteristics.

  14. Molecular and nanoscale materials and devices in electronics.

    PubMed

    Fu, Lei; Cao, Lingchao; Liu, Yunqi; Zhu, Daoben

    2004-12-13

    Over the past several years, there have been many significant advances toward the realization of electronic computers integrated on the molecular scale and a much greater understanding of the types of materials that will be useful in molecular devices and their properties. It was demonstrated that individual molecules could serve as incomprehensibly tiny switch and wire one million times smaller than those on conventional silicon microchip. This has resulted very recently in the assembly and demonstration of tiny computer logic circuits built from such molecular scale devices. The purpose of this review is to provide a general introduction to molecular and nanoscale materials and devices in electronics.

  15. Optoelectronic Mounting Structure

    DOEpatents

    Anderson, Gene R.; Armendariz, Marcelino G.; Baca, Johnny R. F.; Bryan, Robert P.; Carson, Richard F.; Chu, Dahwey; Duckett, III, Edwin B.; McCormick, Frederick B.; Peterson, David W.; Peterson, Gary D.; Reber, Cathleen A.; Reysen, Bill H.

    2004-10-05

    An optoelectronic mounting structure is provided that may be used in conjunction with an optical transmitter, receiver or transceiver module. The mounting structure may be a flexible printed circuit board. Thermal vias or heat pipes in the head region may transmit heat from the mounting structure to the heat spreader. The heat spreader may provide mechanical rigidity or stiffness to the heat region. In another embodiment, an electrical contact and ground plane may pass along a surface of the head region so as to provide an electrical contact path to the optoelectronic devices and limit electromagnetic interference. In yet another embodiment, a window may be formed in the head region of the mounting structure so as to provide access to the heat spreader. Optoelectronic devices may be adapted to the heat spreader in such a manner that the devices are accessible through the window in the mounting structure.

  16. Interplay of Nanoscale, Hybrid P3HT/ZTO Interface on Optoelectronics and Photovoltaic Cells.

    PubMed

    Lai, Jian-Jhong; Li, Yu-Hsun; Feng, Bo-Rui; Tang, Shiow-Jing; Jian, Wen-Bin; Fu, Chuan-Min; Chen, Jiun-Tai; Wang, Xu; Lee, Pooi See

    2017-09-27

    Photovoltaic effects in poly(3-hexylthiophene-2,5-diyl) (P3HT) have attracted much attention recently. Here, natively p-type doped P3HT nanofibers and n-type doped zinc tin oxide (ZTO) nanowires are used for making not only field-effect transistors (FETs) but also p-n nanoscale diodes. The hybrid P3HT/ZTO p-n heterojunction shows applications in many directions, and it also facilitates the investigation of photoelectrons and photovoltaic effects on the nanoscale. As for applications, the heterojunction device shows a simultaneously high on/off ratio of n- and p-type FETs, gatable p-n junction diodes, tristate buffer devices, gatable photodetectors, and gatable solar cells. On the other hand, P3HT nanofibers are taken as a photoactive layer and the role played by the p-n heterojunction in the photoelectric and photovoltaic effects is investigated. It is found that the hybrid P3HT/ZTO p-n heterojunction assists in increasing photocurrents and enhancing photovoltaic effects. Through the controllable gating of the heterojunction, we can discuss the background mechanisms of photocurrent generation and photovoltaic energy harvesting.

  17. Graphene-Boron Nitride Heterostructure Based Optoelectronic Devices for On-Chip Optical Interconnects

    NASA Astrophysics Data System (ADS)

    Gao, Yuanda

    Graphene has emerged as an appealing material for a variety of optoelectronic applications due to its unique electrical and optical characteristics. In this thesis, I will present recent advances in integrating graphene and graphene-boron nitride (BN) heterostructures with confined optical architectures, e.g. planar photonic crystal (PPC) nanocavities and silicon channel waveguides, to make this otherwise weakly absorbing material optically opaque. Based on these integrations, I will further demonstrate the resulting chip-integrated optoelectronic devices for optical interconnects. After transferring a layer of graphene onto PPC nanocavities, spectral selectivity at the resonance frequency and orders-of-magnitude enhancement of optical coupling with graphene have been observed in infrared spectrum. By applying electrostatic potential to graphene, electro-optic modulation of the cavity reflection is possible with contrast in excess of 10 dB. And furthermore, a novel and complex modulator device structure based on the cavity-coupled and BN-encapsulated dual-layer graphene capacitor is demonstrated to operate at a speed of 1.2 GHz. On the other hand, an enhanced broad-spectrum light-graphene interaction coupled with silicon channel waveguides is also demonstrated with ?0.1 dB/?m transmission attenuation due to graphene absorption. A waveguide-integrated graphene photodetector is fabricated and shown 0.1 A/W photoresponsivity and 20 GHz operation speed. An improved version of a similar photodetector using graphene-BN heterostructure exhibits 0.36 A/W photoresponsivity and 42 GHz response speed. The integration of graphene and graphene-BN heterostructures with nanophotonic architectures promises a new generation of compact, energy-efficient, high-speed optoelectronic device concepts for on-chip optical communications that are not yet feasible or very difficult to realize using traditional bulk semiconductors.

  18. Optical biosensors: a revolution towards quantum nanoscale electronics device fabrication.

    PubMed

    Dey, D; Goswami, T

    2011-01-01

    The dimension of biomolecules is of few nanometers, so the biomolecular devices ought to be of that range so a better understanding about the performance of the electronic biomolecular devices can be obtained at nanoscale. Development of optical biomolecular device is a new move towards revolution of nano-bioelectronics. Optical biosensor is one of such nano-biomolecular devices that has a potential to pave a new dimension of research and device fabrication in the field of optical and biomedical fields. This paper is a very small report about optical biosensor and its development and importance in various fields.

  19. 78 FR 77166 - Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2013-12-20

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-860] Certain Optoelectronic Devices for Fiber Optic Communications, Components Thereof, and Products Containing the Same; Notice of Request for Statements on the Public Interest AGENCY: U.S. International Trade Commission. ACTION: Notice. SUMMARY...

  20. RIR-MAPLE deposition of conjugated polymers and hybrid nanocomposites for application to optoelectronic devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Stiff-Roberts, Adrienne D.; Pate, Ryan; McCormick, Ryan

    2012-07-30

    Resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) is a variation of pulsed laser deposition that is useful for organic-based thin films because it reduces material degradation by selective absorption of infrared radiation in the host matrix. A unique emulsion-based RIR-MAPLE approach has been developed that reduces substrate exposure to solvents and provides controlled and repeatable organic thin film deposition. In order to establish emulsion-based RIR-MAPLE as a preferred deposition technique for conjugated polymer or hybrid nanocomposite optoelectronic devices, studies have been conducted to demonstrate the value added by the approach in comparison to traditional solution-based deposition techniques, and this workmore » will be reviewed. The control of hybrid nanocomposite thin film deposition, and the photoconductivity in such materials deposited using emulsion-based RIR-MAPLE, will also be reviewed. The overall result of these studies is the demonstration of emulsion-based RIR-MAPLE as a viable option for the fabrication of conjugated polymer and hybrid nanocomposite optoelectronic devices that could yield improved device performance.« less

  1. Multifunctional Silicon Optoelectronics Integrated with Plasmonic Scattering Color.

    PubMed

    Wen, Long; Chen, Qin; Hu, Xin; Wang, Huacun; Jin, Lin; Su, Qiang

    2016-12-27

    Plasmonic scattering from metallic nanoparticles has been used for centuries to create the colorful appearance of stained glass. Besides their use as passive spectral filtering components, multifunctional optoelectronic applications can be achieved by integrating the nanoscatters with semiconductors that generate electricity using the complementary spectral components of plasmonic colors. To suppress the usual degradation of both efficiency and the gamut of plasmonic scattering coloration in highly asymmetric index configurations like a silicon host, aluminum nanodisks on indium tin oxide (ITO) coated silicon were experimentally studied and demonstrated color sorting in the full visible range along with photocurrent generation. Interestingly, the photocurrents were found to be comparable to the reference devices with only antireflection coatings in spite of the power loss for coloration. Detailed investigation shows that ITO serves as both the impedance matching layer for promoting the backward scattering and schottky contact with silicon, and moreover, plasmonic nanoscatters efficiently harvest the complement spectrum components for charge generation. The present approach combines the capacities of nanoscale color sorting and photoelectric converting at a negligible cost of efficiency, thus providing a broad flexibility of being utilized in various optoelectronic applications including self-powered display, filter-free imaging, and colorful photovoltaics.

  2. Successful development of first-generation laser device; marking China's optoelectronic technology at world class level

    NASA Astrophysics Data System (ADS)

    1995-04-01

    Bell Laboratories has developed the world's first optical information processor. Its core device is a self-excited electrooptical effect apparatus array of symmetric operation. After being developed in the United States, this high-technology device was successfully developed by China's scientists,thus making the fact that China's optoelectronic technology is among the most advanced in the world.

  3. Optoelectronic devices incorporating fluoropolymer compositions for protection

    DOEpatents

    Chen, Xuming; Chum, Pak-Wing S.; Howard, Kevin E.; Lopez, Leonardo C.; Sumner, William C.; Wu, Shaofu

    2015-12-22

    The fluoropolymer compositions of the present invention generally incorporate ingredients comprising one or more fluoropolymers, an ultraviolet light protection component (hereinafter UV protection component), and optionally one or more additional ingredients if desired. The UV protection component includes a combination of at least one hindered tertiary amine (HTA) compound having a certain structure and a weight average molecular weight of at least 1000. This tertiary amine is used in combination with at least one organic, UV light absorbing compound (UVLA compound) having a weight average molecular weight greater than 500. When the HTA compound and the UVLA compound are selected according to principles of the present invention, the UV protection component provides fluoropolymer compositions with significantly improved weatherability characteristics for protecting underlying materials, features, structures, components, and/or the like. In particular, fluoropolymer compositions incorporating the UV protection component of the present invention have unexpectedly improved ability to resist blackening, coloration, or other de gradation that may be caused by UV exposure. As a consequence, devices protected by these compositions would be expected to have dramatically improved service life. The compositions have a wide range of uses but are particularly useful for forming protective layers in optoelectronic devices.

  4. Direct anisotropic growth of CdS nanocrystals in thermotropic liquid crystal templates for heterojunction optoelectronics.

    PubMed

    Yuan, Kai; Chen, Lie; Chen, Yiwang

    2014-09-01

    The direct growth of CdS nanocrystals in functional solid-state thermotropic liquid crystal (LC) small molecules and a conjugated LC polymer by in situ thermal decomposition of a single-source cadmium xanthate precursor to fabricate LC/CdS hybrid nanocomposites is described. The influence of thermal annealing temperature of the LC/CdS precursors upon the nanomorphology, photophysics, and optoelectronic properties of the LC/CdS nanocomposites is systematically studied. Steady-state PL and ultrafast emission dynamics studies show that the charge-transfer rates are strongly dependent on the thermal annealing temperature. Notably, annealing at liquid-crystal state temperature promotes a more organized nanomorphology of the LC/CdS nanocomposites with improved photophysics and optoelectronic properties. The results confirm that thermotropic LCs can be ideal candidates as organization templates for the control of organic/inorganic hybrid nanocomposites at the nanoscale level. The results also demonstrate that in situ growth of semiconducting nanocrystals in thermotropic LCs is a versatile route to hybrid organic/inorganic nanocomposites and optoelectronic devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Real-Time Nanoscale Open-Circuit Voltage Dynamics of Perovskite Solar Cells.

    PubMed

    Garrett, Joseph L; Tennyson, Elizabeth M; Hu, Miao; Huang, Jinsong; Munday, Jeremy N; Leite, Marina S

    2017-04-12

    Hybrid organic-inorganic perovskites based on methylammonium lead (MAPbI 3 ) are an emerging material with great potential for high-performance and low-cost photovoltaics. However, for perovskites to become a competitive and reliable solar cell technology their instability and spatial variation must be understood and controlled. While the macroscopic characterization of the devices as a function of time is very informative, a nanoscale identification of their real-time local optoelectronic response is still missing. Here, we implement a four-dimensional imaging method through illuminated heterodyne Kelvin probe force microscopy to spatially (<50 nm) and temporally (16 s/scan) resolve the voltage of perovskite solar cells in a low relative humidity environment. Local open-circuit voltage (V oc ) images show nanoscale sites with voltage variation >300 mV under 1-sun illumination. Surprisingly, regions of voltage that relax in seconds and after several minutes consistently coexist. Time-dependent changes of the local V oc are likely due to intragrain ion migration and are reversible at low injection level. These results show for the first time the real-time transient behavior of the V oc in perovskite solar cells at the nanoscale. Understanding and controlling the light-induced electrical changes that affect device performance are critical to the further development of stable perovskite-based solar technologies.

  6. Tailoring uniform gold nanoparticle arrays and nanoporous films for next-generation optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Farid, Sidra; Kuljic, Rade; Poduri, Shripriya; Dutta, Mitra; Darling, Seth B.

    2018-06-01

    High-density arrays of gold nanodots and nanoholes on indium tin oxide (ITO)-coated glass surfaces are fabricated using a nanoporous template fabricated by the self-assembly of diblock copolymers of poly (styrene-block-methyl methacrylate) (PS-b-PMMA) structures. By balancing the interfacial interactions between the polymer blocks and the substrate using random copolymer, cylindrical block copolymer microdomains oriented perpendicular to the plane of the substrate have been obtained. Nanoporous PS films are created by selectively etching PMMA cylinders, a straightforward route to form highly ordered nanoscale porous films. Deposition of gold on the template followed by lift off and sonication leaves a highly dense array of gold nanodots. These materials can serve as templates for the vapor-liquid-solid (VLS) growth of semiconductor nanorod arrays for next generation hybrid optoelectronic applications.

  7. Human eye-inspired soft optoelectronic device using high-density MoS2-graphene curved image sensor array.

    PubMed

    Choi, Changsoon; Choi, Moon Kee; Liu, Siyi; Kim, Min Sung; Park, Ok Kyu; Im, Changkyun; Kim, Jaemin; Qin, Xiaoliang; Lee, Gil Ju; Cho, Kyoung Won; Kim, Myungbin; Joh, Eehyung; Lee, Jongha; Son, Donghee; Kwon, Seung-Hae; Jeon, Noo Li; Song, Young Min; Lu, Nanshu; Kim, Dae-Hyeong

    2017-11-21

    Soft bioelectronic devices provide new opportunities for next-generation implantable devices owing to their soft mechanical nature that leads to minimal tissue damages and immune responses. However, a soft form of the implantable optoelectronic device for optical sensing and retinal stimulation has not been developed yet because of the bulkiness and rigidity of conventional imaging modules and their composing materials. Here, we describe a high-density and hemispherically curved image sensor array that leverages the atomically thin MoS 2 -graphene heterostructure and strain-releasing device designs. The hemispherically curved image sensor array exhibits infrared blindness and successfully acquires pixelated optical signals. We corroborate the validity of the proposed soft materials and ultrathin device designs through theoretical modeling and finite element analysis. Then, we propose the ultrathin hemispherically curved image sensor array as a promising imaging element in the soft retinal implant. The CurvIS array is applied as a human eye-inspired soft implantable optoelectronic device that can detect optical signals and apply programmed electrical stimulation to optic nerves with minimum mechanical side effects to the retina.

  8. Single-sided lateral-field and phototransistor-based optoelectronic tweezers

    NASA Technical Reports Server (NTRS)

    Ohta, Aaron (Inventor); Chiou, Pei-Yu (Inventor); Hsu, Hsan-Yin (Inventor); Jamshidi, Arash (Inventor); Wu, Ming-Chiang (Inventor); Neale, Steven L. (Inventor)

    2011-01-01

    Described herein are single-sided lateral-field optoelectronic tweezers (LOET) devices which use photosensitive electrode arrays to create optically-induced dielectrophoretic forces in an electric field that is parallel to the plane of the device. In addition, phototransistor-based optoelectronic tweezers (PhOET) devices are described that allow for optoelectronic tweezers (OET) operation in high-conductivity physiological buffer and cell culture media.

  9. Cooperative Lamb shift and superradiance in an optoelectronic device

    NASA Astrophysics Data System (ADS)

    Frucci, G.; Huppert, S.; Vasanelli, A.; Dailly, B.; Todorov, Y.; Beaudoin, G.; Sagnes, I.; Sirtori, C.

    2017-04-01

    When a single excitation is shared between a large number of two-level systems, a strong enhancement of the spontaneous emission appears. This phenomenon is known as superradiance. This enhanced rate can be accompanied by a shift of the emission frequency, the cooperative Lamb shift, issued from the exchange of virtual photons between the emitters. In this work we present a semiconductor optoelectronic device allowing the observation of these two phenomena at room temperature. We demonstrate experimentally and theoretically that plasma oscillations in spatially separated quantum wells interact through real and virtual photon exchange. This gives rise to a superradiant mode displaying a large cooperative Lamb shift.

  10. An open-source platform to study uniaxial stress effects on nanoscale devices

    NASA Astrophysics Data System (ADS)

    Signorello, G.; Schraff, M.; Zellekens, P.; Drechsler, U.; Bürge, M.; Steinauer, H. R.; Heller, R.; Tschudy, M.; Riel, H.

    2017-05-01

    We present an automatic measurement platform that enables the characterization of nanodevices by electrical transport and optical spectroscopy as a function of the uniaxial stress. We provide insights into and detailed descriptions of the mechanical device, the substrate design and fabrication, and the instrument control software, which is provided under open-source license. The capability of the platform is demonstrated by characterizing the piezo-resistance of an InAs nanowire device using a combination of electrical transport and Raman spectroscopy. The advantages of this measurement platform are highlighted by comparison with state-of-the-art piezo-resistance measurements in InAs nanowires. We envision that the systematic application of this methodology will provide new insights into the physics of nanoscale devices and novel materials for electronics, and thus contribute to the assessment of the potential of strain as a technology booster for nanoscale electronics.

  11. Exploring Carbon Nanotubes for Nanoscale Devices

    NASA Technical Reports Server (NTRS)

    Han, Jie; Dai; Anantram; Jaffe; Saini, Subhash (Technical Monitor)

    1998-01-01

    Carbon nanotubes (CNTs) are shown to promise great opportunities in nanoelectronic devices and nanoelectromechanical systems (NEMS) because of their inherent nanoscale sizes, intrinsic electric conductivities, and seamless hexagonal network architectures. I present our collaborative work with Stanford on exploring CNTs for nanodevices in this talk. The electrical property measurements suggest that metallic tubes are quantum wires. Furthermore, two and three terminal CNT junctions have been observed experimentally. We have proposed and studied CNT-based molecular switches and logic devices for future digital electronics. We also have studied CNTs based NEMS inclusing gears, cantilevers, and scanning probe microscopy tips. We investigate both chemistry and physics based aspects of the CNT NEMS. Our results suggest that CNT have ideal stiffness, vibrational frequencies, Q-factors, geometry-dependent electric conductivities, and the highest chemical and mechanical stabilities for the NEMS. The use of CNT SPM tips for nanolithography is presented for demonstration of the advantages of the CNT NEMS.

  12. Wafer-Scale Integration of Graphene-based Electronic, Optoelectronic and Electroacoustic Devices

    PubMed Central

    Tian, He; Yang, Yi; Xie, Dan; Cui, Ya-Long; Mi, Wen-Tian; Zhang, Yuegang; Ren, Tian-Ling

    2014-01-01

    In virtue of its superior properties, the graphene-based device has enormous potential to be a supplement or an alternative to the conventional silicon-based device in varies applications. However, the functionality of the graphene devices is still limited due to the restriction of the high cost, the low efficiency and the low quality of the graphene growth and patterning techniques. We proposed a simple one-step laser scribing fabrication method to integrate wafer-scale high-performance graphene-based in-plane transistors, photodetectors, and loudspeakers. The in-plane graphene transistors have a large on/off ratio up to 5.34. And the graphene photodetector arrays were achieved with photo responsivity as high as 0.32 A/W. The graphene loudspeakers realize wide-band sound generation from 1 to 50 kHz. These results demonstrated that the laser scribed graphene could be used for wafer-scale integration of a variety of graphene-based electronic, optoelectronic and electroacoustic devices. PMID:24398542

  13. Effects of nanoscale vacuum gap on photon-enhanced thermionic emission devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wang, Yuan; Liao, Tianjun; Zhang, Yanchao

    2016-01-28

    A new model of the photon-enhanced thermionic emission (PETE) device with a nanoscale vacuum gap is established by introducing the quantum tunneling effect and the image force correction. Analytic expressions for both the thermionic emission and tunneling currents are derived. The electron concentration and the temperature of the cathode are determined by the particle conservation and energy balance equations. The effects of the operating voltage on the maximum potential barrier, cathode temperature, electron concentration and equilibrium electron concentration of the conduction band, and efficiency of the PETE device are discussed in detail for different given values of the vacuum gapmore » length. The influence of the band gap of the cathode and flux concentration on the efficiency is further analyzed. The maximum efficiency of the PETE and the corresponding optimum values of the band gap and the operating voltage are determined. The results obtained here show that the efficiency of the PETE device can be significantly improved by employing a nanoscale vacuum gap.« less

  14. A Flexible and Thin Graphene/Silver Nanowires/Polymer Hybrid Transparent Electrode for Optoelectronic Devices.

    PubMed

    Dong, Hua; Wu, Zhaoxin; Jiang, Yaqiu; Liu, Weihua; Li, Xin; Jiao, Bo; Abbas, Waseem; Hou, Xun

    2016-11-16

    A typical thin and fully flexible hybrid electrode was developed by integrating the encapsulation of silver nanowires (AgNWs) network between a monolayer graphene and polymer film as a sandwich structure. Compared with the reported flexible electrodes based on PET or PEN substrate, this unique electrode exhibits the superior optoelectronic characteristics (sheet resistance of 8.06 Ω/□ at 88.3% light transmittance). Meanwhile, the specific up-to-bottom fabrication process could achieve the superflat surface (RMS = 2.58 nm), superthin thickness (∼8 μm thickness), high mechanical robustness, and lightweight. In addition, the strong corrosion resistance and stability for the hybrid electrode were proved. With these advantages, we employ this electrode to fabricate the simple flexible organic light-emitting device (OLED) and perovskite solar cell device (PSC), which exhibit the considerable performance (best PCE of OLED = 2.11 cd/A 2 ; best PCE of PSC = 10.419%). All the characteristics of the unique hybrid electrode demonstrate its potential as a high-performance transparent electrode candidate for flexible optoelectronics.

  15. Emissive polymeric materials for optoelectronic devices

    DOEpatents

    Shiang, Joseph John [Niskayuna, NY; Chichak, Kelly Scott [Clifton Park, NY; Cella, James Anthony [Clifton Park, NY; Lewis, Larry Neil [Scotia, NY; Janora, Kevin Henry [Schenectady, NY

    2011-07-05

    Polymers including at least one structural unit derived from a compound of formula I or including at least one pendant group of formula II may be used in optoelectronic devices ##STR00001## wherein R.sup.1, R.sup.3, R.sup.4 and R.sup.6 are independently hydrogen, alkyl, alkoxy, oxaalkyl, alkylaryl, aryl, arylalkyl, heteroaryl, substituted alkyl; substituted alkoxy, substituted oxaalkyl, substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted heteroaryl; R.sup.1a is hydrogen or alkyl; R.sup.2 is alkylene, substituted alkylene, oxaalkylene, CO, or CO.sub.2; R.sup.2a is alkylene; R.sup.5 is independently at each occurrence hydrogen, alkyl, alkylaryl, aryl, arylalkyl, alkoxy, carboxy, substituted alkyl; substituted alkylaryl, substituted aryl, substituted arylalkyl, or substituted alkoxy, X is halo, triflate, --B(OR.sup.1a).sub.2, or ##STR00002## located at the 2, 5- or 2, 7-positions; and L is derived from phenylpyridine, tolylpyridine, benzothienylpyridine, phenylisoquinoline, dibenzoquinozaline, fluorenylpyridine, ketopyrrole, 2-(1-naphthyl)benzoxazole)), 2-phenylbenzoxazole, 2-phenylbenzothiazole, coumarin, thienylpyridine, phenylpyridine, benzothienylpyridine, 3-methoxy-2-phenylpyridine, thienylpyridine, phenylimine, vinylpyridine, pyridylnaphthalene, pyridylpyrrole, pyridylimidazole, phenylindole, derivatives thereof or combinations thereof.

  16. Perovskite Materials: Solar Cell and Optoelectronic Applications

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yang, Bin; Geohegan, David B; Xiao, Kai

    2017-01-01

    Hybrid organometallic trihalide perovskites are promising candidates in the applications for next-generation, high-performance, low-cost optoelectronic devices, including photovoltaics, light emitting diodes, and photodetectors. Particularly, the solar cells based on this type of materials have reached 22% lab scale power conversion efficiency in only about seven years, comparable to the other thin film photovoltaic technologies. Hybrid perovskite materials not only exhibit superior optoelectronic properties, but also show many interesting physical properties such as ion migration and defect physics, which may allow the exploration of more device functionalities. In this article, the fundamental understanding of the interrelationships between crystal structure, electronic structure,more » and material properties is discussed. Various chemical synthesis and processing methods for superior device performance in solar cells and optoelectronic devices are reviewed.« less

  17. Nanoscale Devices for Solid State Refrigeration and Power Generation

    DTIC Science & Technology

    2004-01-01

    techniques such as ballistic electron emission microscopy, scanning thermal microscopy, X - ray photoelectron emission spectroscopy, etc. The main emphasis is...0-7803-8363- X /04/$20.00 ©2004 IEEE 20th IEEE SEMI-THERM Symposium Nanoscale Devices for Solid State Refrigeration and Power Generation Ali...theories [9,23,24]. Since thermal conductivity is an average bulk effect involving many lattice vibrations (phonons modes), it is hard to

  18. Review of optoelectronic oscillators based on modelocked lasers and resonant tunneling diode optoelectronics

    NASA Astrophysics Data System (ADS)

    Ironside, C. N.; Haji, Mohsin; Hou, Lianping; Akbar, Jehan; Kelly, Anthony E.; Seunarine, K.; Romeira, Bruno; Figueiredo, José M. L.

    2011-05-01

    Optoelectronic oscillators can provide low noise oscillators at radio frequencies in the 0.5-40 GHz range and in this paper we review two recently introduced approaches to optoelectronic oscillators. Both approaches use an optical fibre feedback loop. One approach is based on passively modelocked laser diodes and in a 40 GHz oscillator achieves up to 30 dB noise reduction. The other approach is based on resonant tunneling diode optoelectronic devices and in a 1.4 GHz oscillator can achieve up to 30 dB noise reduction.

  19. Theory of Electron, Phonon and Spin Transport in Nanoscale Quantum Devices.

    PubMed

    Sadeghi, Hatef

    2018-06-21

    At the level of fundamental science, it was recently demonstrated that molecular wires can mediate long-range phase-coherent tunnelling with remarkably low attenuation over a few nanometre even at room temperature. Furthermore, a large mean free path has been observed in graphene and other graphene-like two-dimensional materials. These create the possibility of using quantum and phonon interference to engineer electron and phonon transport for wide range of applications such as molecular switches, sensors, piezoelectricity, thermoelectricity and thermal management. To understand transport properties of such devices, it is crucial to calculate their electronic and phononic transmission coefficients. The aim of this tutorial article is to review the state-of-art theoretical and mathematical techniques to treat electron, phonon and spin transport in nanoscale molecular junctions. This helps not only to explain new phenomenon observed experimentally but also provides a vital design tool to develop novel nanoscale quantum devices. © 2018 IOP Publishing Ltd.

  20. Nanostructure and optoelectronic phenomena in germanium-transparent conductive oxide (Ge:TCO) composites

    NASA Astrophysics Data System (ADS)

    Shih, Grace Hwei-Pyng

    Nanostructured composites are attracting intense interest for electronic and optoelectronic device applications, specifically as active elements in thin film photovoltaic (PV) device architectures. These systems implement fundamentally different concepts of enhancing energy conversion efficiencies compared to those seen in current commercial devices. This is possible through considerable flexibility in the manipulation of device-relevant properties through control of the interplay between the nanostructure and the optoelectronic response. In the present work, inorganic nanocomposites of semiconductor Ge embedded in transparent conductive indium tin oxide (ITO) as well as Ge in zinc oxide (ZnO) were produced by a single step RF-magnetron sputter deposition process. It is shown that, by controlling the design of the nanocomposites as well as heat treatment conditions, decreases in the physical dimensions of Ge nanophase size provided an effective tuning of the optical absorption and charge transport properties. This effect of changes in the optical properties of nanophase semiconductors with respect to size is known as the quantum confinement effect. Variation in the embedding matrix material between ITO and ZnO with corresponding characterization of optoelectronic properties exhibit notable differences in the presence and evolution of an interfacial oxide within these composites. Further studies of interfacial structures were performed using depth-profiling XPS and Raman spectroscopy, while study of the corresponding electronic effects were performed using room temperature and temperature-dependent Hall Effect. Optical absorption was noted to shift to higher onset energies upon heat treatment with a decrease in the observed Ge domain size, indicating quantum confinement effects within these systems. This contrasts to previous investigations that have involved the introduction of nanoscale Ge into insulating, amorphous oxides. Comparison of these different matrix

  1. A new regime of nanoscale thermal transport: Collective diffusion increases dissipation efficiency

    DOE PAGES

    Hoogeboom-Pot, Kathleen M.; Hernandez-Charpak, Jorge N.; Gu, Xiaokun; ...

    2015-03-23

    Understanding thermal transport from nanoscale heat sources is important for a fundamental description of energy flow in materials, as well as for many technological applications including thermal management in nanoelectronics and optoelectronics, thermoelectric devices, nanoenhanced photovoltaics, and nanoparticle-mediated thermal therapies. Thermal transport at the nanoscale is fundamentally different from that at the macroscale and is determined by the distribution of carrier mean free paths and energy dispersion in a material, the length scales of the heat sources, and the distance over which heat is transported. Past work has shown that Fourier’s law for heat conduction dramatically overpredicts the rate ofmore » heat dissipation from heat sources with dimensions smaller than the mean free path of the dominant heat-carrying phonons. In this work, we uncover a new regime of nanoscale thermal transport that dominates when the separation between nanoscale heat sources is small compared with the dominant phonon mean free paths. Surprisingly, the interaction of phonons originating from neighboring heat sources enables more efficient diffusive-like heat dissipation, even from nanoscale heat sources much smaller than the dominant phonon mean free paths. This finding suggests that thermal management in nanoscale systems including integrated circuits might not be as challenging as previously projected. In conclusion, we demonstrate a unique capability to extract differential conductivity as a function of phonon mean free path in materials, allowing the first (to our knowledge) experimental validation of predictions from the recently developed first-principles calculations.« less

  2. A new regime of nanoscale thermal transport: Collective diffusion increases dissipation efficiency

    NASA Astrophysics Data System (ADS)

    Hoogeboom-Pot, Kathleen M.; Hernandez-Charpak, Jorge N.; Gu, Xiaokun; Frazer, Travis D.; Anderson, Erik H.; Chao, Weilun; Falcone, Roger W.; Yang, Ronggui; Murnane, Margaret M.; Kapteyn, Henry C.; Nardi, Damiano

    2015-04-01

    Understanding thermal transport from nanoscale heat sources is important for a fundamental description of energy flow in materials, as well as for many technological applications including thermal management in nanoelectronics and optoelectronics, thermoelectric devices, nanoenhanced photovoltaics, and nanoparticle-mediated thermal therapies. Thermal transport at the nanoscale is fundamentally different from that at the macroscale and is determined by the distribution of carrier mean free paths and energy dispersion in a material, the length scales of the heat sources, and the distance over which heat is transported. Past work has shown that Fourier's law for heat conduction dramatically overpredicts the rate of heat dissipation from heat sources with dimensions smaller than the mean free path of the dominant heat-carrying phonons. In this work, we uncover a new regime of nanoscale thermal transport that dominates when the separation between nanoscale heat sources is small compared with the dominant phonon mean free paths. Surprisingly, the interaction of phonons originating from neighboring heat sources enables more efficient diffusive-like heat dissipation, even from nanoscale heat sources much smaller than the dominant phonon mean free paths. This finding suggests that thermal management in nanoscale systems including integrated circuits might not be as challenging as previously projected. Finally, we demonstrate a unique capability to extract differential conductivity as a function of phonon mean free path in materials, allowing the first (to our knowledge) experimental validation of predictions from the recently developed first-principles calculations.

  3. Recent developments of truly stretchable thin film electronic and optoelectronic devices.

    PubMed

    Zhao, Juan; Chi, Zhihe; Yang, Zhan; Chen, Xiaojie; Arnold, Michael S; Zhang, Yi; Xu, Jiarui; Chi, Zhenguo; Aldred, Matthew P

    2018-03-29

    Truly stretchable electronics, wherein all components themselves permit elastic deformation as the whole devices are stretched, exhibit unique advantages over other strategies, such as simple fabrication process, high integrity of entire components and intimate integration with curvilinear surfaces. In contrast to the stretchable devices using stretchable interconnectors to integrate with rigid active devices, truly stretchable devices are realized with or without intentionally employing structural engineering (e.g. buckling), and the whole device can be bent, twisted, or stretched to meet the demands for practical applications, which are beyond the capability of conventional flexible devices that can only bend or twist. Recently, great achievements have been made toward truly stretchable electronics. Here, the contribution of this review is an effort to provide a panoramic view of the latest progress concerning truly stretchable electronic devices, of which we give special emphasis to three kinds of thin film electronic and optoelectronic devices: (1) thin film transistors, (2) electroluminescent devices (including organic light-emitting diodes, light-emitting electrochemical cells and perovskite light-emitting diodes), and (3) photovoltaics (including organic photovoltaics and perovskite solar cells). We systematically discuss the device design and fabrication strategies, the origin of device stretchability and the relationship between the electrical and mechanical behaviors of the devices. We hope that this review provides a clear outlook of these attractive stretchable devices for a broad range of scientists and attracts more researchers to devote their time to this interesting research field in both industry and academia, thus encouraging more intelligent lifestyles for human beings in the coming future.

  4. Doping dependent crystal structures and optoelectronic properties of n-type CdSe:Ga nanowries.

    PubMed

    Hu, Zhizhong; Zhang, Xiujuan; Xie, Chao; Wu, Chunyan; Zhang, Xiaozhen; Bian, Liang; Wu, Yiming; Wang, Li; Zhang, Yuping; Jie, Jiansheng

    2011-11-01

    Although CdSe nanostructures possess excellent electrical and optical properties, efforts to make nano-optoelectronic devices from CdSe nanostructures have been hampered by the lack of efficient methods to rationally control their structural and electrical characteristics. Here, we report CdSe nanowires (NWs) with doping dependent crystal structures and optoelectronic properties by using gallium (Ga) as the efficient n-type dopant via a simple thermal co-evaporation method. The phase change of CdSe NWs from wurtzite to zinc blende with increased doping level is observed. Systematical measurements on the transport properties of the CdSe:Ga NWs reveal that the NW conductivity could be tuned in a wide range of near nine orders of magnitude by adjusting the Ga doping level and a high electron concentration up to 4.5 × 10(19) cm(-3) is obtained. Moreover, high-performance top-gate field-effect transistors are constructed based on the individual CdSe:Ga NWs by using high-κ HfO(2) as the gate dielectric. The great potential of the CdSe:Ga NWs as high-sensitive photodetectors and nanoscale light emitters is also exploited, revealing the promising applications of the CdSe:Ga NWs in new-generation nano-optoelectronics.

  5. Single event test methodology for integrated optoelectronics

    NASA Technical Reports Server (NTRS)

    Label, Kenneth A.; Cooley, James A.; Stassinopoulos, E. G.; Marshall, Paul; Crabtree, Christina

    1993-01-01

    A single event upset (SEU), defined as a transient or glitch on the output of a device, and its applicability to integrated optoelectronics are discussed in the context of spacecraft design and the need for more than a bit error rate viewpoint for testing and analysis. A methodology for testing integrated optoelectronic receivers and transmitters for SEUs is presented, focusing on the actual test requirements and system schemes needed for integrated optoelectronic devices. Two main causes of single event effects in the space environment, including protons and galactic cosmic rays, are considered along with ground test facilities for simulating the space environment.

  6. 2D Organic Materials for Optoelectronic Applications.

    PubMed

    Yang, Fangxu; Cheng, Shanshan; Zhang, Xiaotao; Ren, Xiaochen; Li, Rongjin; Dong, Huanli; Hu, Wenping

    2018-01-01

    The remarkable merits of 2D materials with atomically thin structures and optoelectronic attributes have inspired great interest in integrating 2D materials into electronics and optoelectronics. Moreover, as an emerging field in the 2D-materials family, assembly of organic nanostructures into 2D forms offers the advantages of molecular diversity, intrinsic flexibility, ease of processing, light weight, and so on, providing an exciting prospect for optoelectronic applications. Herein, the applications of organic 2D materials for optoelectronic devices are a main focus. Material examples include 2D, organic, crystalline, small molecules, polymers, self-assembly monolayers, and covalent organic frameworks. The protocols for 2D-organic-crystal-fabrication and -patterning techniques are briefly discussed, then applications in optoelectronic devices are introduced in detail. Overall, an introduction to what is known and suggestions for the potential of many exciting developments are presented. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Optoelectronic Devices, Sensors, Communication and Multimedia, Photonics Applications and Web Engineering, Wilga, May 2012

    NASA Astrophysics Data System (ADS)

    Romaniuk, Ryszard S.

    2012-05-01

    This paper is the fourth part (out of five) of the research survey of WILGA Symposium work, May 2012 Edition, concerned with Optoelectronic Devices, Sensors, Communication and Multimedia (Video and Audio) technologies. It presents a digest of chosen technical work results shown by young researchers from different technical universities from this country during the Jubilee XXXth SPIE-IEEE Wilga 2012, May Edition, symposium on Photonics and Web Engineering. Topical tracks of the symposium embraced, among others, nanomaterials and nanotechnologies for photonics, sensory and nonlinear optical fibers, object oriented design of hardware, photonic metrology, optoelectronics and photonics applications, photonics-electronics co-design, optoelectronic and electronic systems for astronomy and high energy physics experiments, JET tokamak and pi-of-the sky experiments development. The symposium is an annual summary in the development of numerable Ph.D. theses carried out in this country in the area of advanced electronic and photonic systems. It is also a great occasion for SPIE, IEEE, OSA and PSP students to meet together in a large group spanning the whole country with guests from this part of Europe. A digest of Wilga references is presented [1-270].

  8. A Novel Optoelectronic Device Based on Correlated Two-Dimensional Fermions

    NASA Astrophysics Data System (ADS)

    Dianat, Pouya

    Conventional metallic contacts can be replicated by quantum two dimensional charge (of Fermion) systems (2DFS). Unlike metals, the particle concentration of these "unconventional" systems can be accurately controlled in an extensive range and by means of external electronic or optical stimuli. A 2DFS can, hence, transition from a high-density kinetic liquid into a dilute-but highly correlated-gas state, in which inter-particle Coulombic interactions are significant. Such interactions contribute negatively, by so-called exchange-correlation energies, to the overall energetics of the system, and are manifested as a series negative quantum capacitance. This dissertation investigates the capacitive performance of a class of unconventional devices based on a planar metal-semiconductor-metal structure with an embedded 2DFS. They constitute an opto-electronically controlled variable capacitor, with record breaking figures-of-merit in capacitance tuning ranges of up to 7000 and voltage sensitivities as large as 400. Internal eld manipulations by localized depletion of a dense 2DFS account for the enlarged maximum and reduced minimum capacitances. The capacitance-voltage characteristics of these devices incur an anomalous "Batman" shape capacitance enhancement (CE) of up to 200% that may be triggered optically. The CE is attributed to the release and storage of exchange-correlation energies; from the "unconventional" plate and in the dielectric, respectively. This process is enforced by density manipulation of the 2DFS by a hybrid of an external eld and light-generated carriers. Under moderate optical powers, the capacitance becomes 43 times greater than the dark value; thus a new capacitance-based photodetection method is offered. This new capacitance based photodetection method has a range of applications in optoelectronics, particularly in the next generation of photonic integrated systems.

  9. Inkjet-printed optoelectronics.

    PubMed

    Zhan, Zhaoyao; An, Jianing; Wei, Yuefan; Tran, Van Thai; Du, Hejun

    2017-01-19

    Inkjet printing is a powerful and cost-effective technique for deposition of liquid inks with high accuracy, which is not only of great significance for graphic applications but also has enormous potential for the direct printing of optoelectronic devices. This review highlights a comprehensive overview of the progress that has been made in optoelectronics fabrication by the inkjet printing technique. The first part briefly covers the droplet-generation process in the nozzles of printheads and the physical properties affecting droplet formation and the profiles of the printed patterns. The second section outlines the recent activities related to applications of inkjet printing in optoelectronics fabrication including solar cells, light-emitting diodes, photodetectors and transparent electrodes. In each application field, the challenges with the inkjet printing process and the possible solutions are discussed before a few remarks. In the last section, a brief summary on the progress of inkjet printing fabrication of optoelectronics and an outlook for future research effort are presented.

  10. GaAs Optoelectronic Integrated-Circuit Neurons

    NASA Technical Reports Server (NTRS)

    Lin, Steven H.; Kim, Jae H.; Psaltis, Demetri

    1992-01-01

    Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

  11. One-Dimensional Nanostructures and Devices of II–V Group Semiconductors

    PubMed Central

    2009-01-01

    The II–V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn3P2nanowires, one-dimensional (1-D) nanostructures of II–V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II–V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II–V semiconducting nanostructures will also be discussed, which include metal–insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, andp–nheterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities. PMID:20596452

  12. Resonant infrared laser deposition of polymer-nanocomposite materials for optoelectronic applications

    NASA Astrophysics Data System (ADS)

    Park, Hee K.; Schriver, Kenneth E.; Haglund, Richard F.

    2011-11-01

    Polymers find a number of potentially useful applications in optoelectronic devices. These include both active layers, such as light-emitting polymers and hole-transport layers, and passive layers, such as polymer barrier coatings and light-management films. This paper reports the experimental results for polymer films deposited by resonant infrared matrix-assisted pulsed laser evaporation (RIR-MAPLE) and resonant infrared pulsed laser deposition (RIR-PLD) for commercial optoelectronic device applications. In particular, light-management films, such as anti-reflection coatings, require refractive-index engineering of a material. However, refractive indices of polymers fall within a relatively narrow range, leading to major efforts to develop both low- and high-refractive-index polymers. Polymer nanocomposites can expand the range of refractive indices by incorporating low- or high-refractive-index nanoscale materials. RIR-MAPLE is an excellent technique for depositing polymer-nanocomposite films in multilayer structures, which are essential to light-management coatings. In this paper, we report our efforts to engineer the refractive index of a barrier polymer by combining RIR-MAPLE of nanomaterials (for example, high refractive-index TiO2 nanoparticles) and RIR-PLD of host polymer. In addition, we report on the properties of organic and polymer films deposited by RIR-MAPLE and/or RIR-PLD, such as Alq3 [tris(8-hydroxyquinoline) aluminum] and PEDOT:PSS [poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)]. Finally, the challenges and potential for commercializing RIR-MAPLE/PLD, such as industrial scale-up issues, are discussed.

  13. Heavily Boron-Doped Silicon Layer for the Fabrication of Nanoscale Thermoelectric Devices

    PubMed Central

    Liu, Yang; Deng, Lingxiao; Zhang, Mingliang; Zhang, Shuyuan; Ma, Jing; Song, Peishuai; Liu, Qing; Ji, An; Yang, Fuhua; Wang, Xiaodong

    2018-01-01

    Heavily boron-doped silicon layers and boron etch-stop techniques have been widely used in the fabrication of microelectromechanical systems (MEMS). This paper provides an introduction to the fabrication process of nanoscale silicon thermoelectric devices. Low-dimensional structures such as silicon nanowire (SiNW) have been considered as a promising alternative for thermoelectric applications in order to achieve a higher thermoelectric figure of merit (ZT) than bulk silicon. Here, heavily boron-doped silicon layers and boron etch-stop processes for the fabrication of suspended SiNWs will be discussed in detail, including boron diffusion, electron beam lithography, inductively coupled plasma (ICP) etching and tetramethylammonium hydroxide (TMAH) etch-stop processes. A 7 μm long nanowire structure with a height of 280 nm and a width of 55 nm was achieved, indicating that the proposed technique is useful for nanoscale fabrication. Furthermore, a SiNW thermoelectric device has also been demonstrated, and its performance shows an obvious reduction in thermal conductivity. PMID:29385759

  14. Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

    DOE PAGES

    Park, J.; Ahn, Y.; Tilka, J. A.; ...

    2016-06-20

    Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Furthermore, electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.

  15. Bio-Organic Nanotechnology: Using Proteins and Synthetic Polymers for Nanoscale Devices

    NASA Technical Reports Server (NTRS)

    Molnar, Linda K.; Xu, Ting; Trent, Jonathan D.; Russell, Thomas P.

    2003-01-01

    While the ability of proteins to self-assemble makes them powerful tools in nanotechnology, in biological systems protein-based structures ultimately depend on the context in which they form. We combine the self-assembling properties of synthetic diblock copolymers and proteins to construct intricately ordered, three-dimensional polymer protein structures with the ultimate goal of forming nano-scale devices. This hybrid approach takes advantage of the capabilities of organic polymer chemistry to build ordered structures and the capabilities of genetic engineering to create proteins that are selective for inorganic or organic substrates. Here, microphase-separated block copolymers coupled with genetically engineered heat shock proteins are used to produce nano-scale patterning that maximizes the potential for both increased structural complexity and integrity.

  16. Nanoelectronics Meets Biology: From Novel Nanoscale Devices for Live Cell Recording to 3D Innervated Tissues†

    PubMed Central

    Duan, Xiaojie; Lieber, Charles M.

    2013-01-01

    High spatio-temporal resolution interfacing between electrical sensors and biological systems, from single live cells to tissues, is crucial for many areas, including fundamental biophysical studies as well as medical monitoring and intervention. This focused review summarizes recent progresses in the development and application of novel nanoscale devices for intracellular electrical recordings of action potentials, and the effort of merging electronic and biological systems seamlessly in three dimension using macroporous nanoelectronic scaffolds. The uniqueness of these nanoscale devices for minimally invasive, large scale, high spatial resolution, and three dimensional neural activity mapping will be highlighted. PMID:23946279

  17. Detecting Nano-Scale Vibrations in Rotating Devices by Using Advanced Computational Methods

    PubMed Central

    del Toro, Raúl M.; Haber, Rodolfo E.; Schmittdiel, Michael C.

    2010-01-01

    This paper presents a computational method for detecting vibrations related to eccentricity in ultra precision rotation devices used for nano-scale manufacturing. The vibration is indirectly measured via a frequency domain analysis of the signal from a piezoelectric sensor attached to the stationary component of the rotating device. The algorithm searches for particular harmonic sequences associated with the eccentricity of the device rotation axis. The detected sequence is quantified and serves as input to a regression model that estimates the eccentricity. A case study presents the application of the computational algorithm during precision manufacturing processes. PMID:22399918

  18. Azurin/CdSe-ZnS-Based Bio-Nano Hybrid Structure for Nanoscale Resistive Memory Device.

    PubMed

    Yagati, Ajay Kumar; Lee, Taek; Choi, Jeong-Woo

    2017-07-15

    In the present study, we propose a method for bio-nano hybrid formation by coupling a redox metalloprotein, Azurin, with CdSe-ZnS quantum dot for the development of a nanoscale resistive memory device. The covalent interaction between the two nanomaterials enables a strong and effective binding to form an azurin/CdSe-ZnS hybrid, and also enabled better controllability to couple with electrodes to examine the memory function properties. Morphological and optical properties were performed to confirm both hybrid formations and also their individual components. Current-Voltage (I-V) measurements on the hybrid nanostructures exhibited bistable current levels towards the memory function device, that and those characteristics were unnoticeable on individual nanomaterials. The hybrids showed good retention characteristics with high stability and durability, which is a promising feature for future nanoscale memory devices.

  19. Novel optoelectronic methodology for testing of MOEMS

    NASA Astrophysics Data System (ADS)

    Pryputniewicz, Ryszard J.; Furlong, Cosme

    2003-01-01

    Continued demands for delivery of high performance micro-optoelectromechanical systems (MOEMS) place unprecedented requirements on methods used in their development and operation. Metrology is a major and inseparable part of these methods. Optoelectronic methodology is an essential field of metrology. Due to its scalability, optoelectronic methodology is particularly suitable for testing of MOEMS where measurements must be made with ever increasing accuracy and precision. This was particularly evident during the last few years, characterized by miniaturization of devices, when requirements for measurements have rapidly increased as the emerging technologies introduced new products, especially, optical MEMS. In this paper, a novel optoelectronic methodology for testing of MOEMS is described and its applications are illustrated with representative examples. These examples demonstrate capability to measure submicron deformations of various components of the micromirror device, under operating conditions, and show viability of the optoelectronic methodology for testing of MOEMS.

  20. Functionalized polyfluorenes for use in optoelectronic devices

    DOEpatents

    Chichak, Kelly Scott [Clifton Park, NY; Lewis, Larry Neil [Scotia, NY; Cella, James Anthony [Clifton Park, NY; Shiang, Joseph John [Niskayuna, NY

    2011-11-08

    The present invention relates to process comprising reacting a polyfluorenes comprising at least one structural group of formula I ##STR00001## with an iridium (III) compound of formula II ##STR00002## wherein R.sup.1 and R.sup.2 are independently alkyl, substituted alkyl, aryl, substituted aryl or a combination thereof; R.sup.5is H or CHO; R.sup.3 and R.sup.4 are independently hydrogen, alkyl, substituted alkyl, aryl, substituted aryl or a combination thereof; R.sup.11 and R.sup.12 taken together form a substituted or unsubstituted monocyclic or bicyclic heteroaromatic ring; R.sup.13 is independently at each occurrence halo, nitro, hydroxy, amino, alkyl, aryl, arylalkyl, alkoxy, substituted alkoxy, substituted alkyl, substituted aryl, or substituted arylalkyl; Ar is aryl, heteroaryl, substituted aryl, substituted heteroaryl, or a combination thereof; X is selected from a direct bond, alky, substituted alkyl, and combinations thereof; Y is CHO or NH.sub.2; Z is CHO or NH.sub.2 where Z does not equal Y; and p is 0, 1 or 2. The invention also relates to the polyfluorenes, which are products of the reaction, and the use of the polyfluorenes in optoelectronic devices.

  1. InGaAlAsPN: A Materials System for Silicon Based Optoelectronics and Heterostructure Device Technologies

    NASA Technical Reports Server (NTRS)

    Broekaert, T. P. E.; Tang, S.; Wallace, R. M.; Beam, E. A., III; Duncan, W. M.; Kao, Y. -C.; Liu, H. -Y.

    1995-01-01

    A new material system is proposed for silicon based opto-electronic and heterostructure devices; the silicon lattice matched compositions of the (In,Ga,Al)-(As,P)N 3-5 compounds. In this nitride alloy material system, the bandgap is expected to be direct at the silicon lattice matched compositions with a bandgap range most likely to be in the infrared to visible. At lattice constants ranging between those of silicon carbide and silicon, a wider bandgap range is expected to be available and the high quality material obtained through lattice matching could enable applications such as monolithic color displays, high efficiency multi-junction solar cells, opto-electronic integrated circuits for fiber communications, and the transfer of existing 3-5 technology to silicon.

  2. Nanoelectronics meets biology: from new nanoscale devices for live-cell recording to 3D innervated tissues.

    PubMed

    Duan, Xiaojie; Lieber, Charles M

    2013-10-01

    High spatiotemporal resolution interfaces between electrical sensors and biological systems, from single live cells to tissues, is crucial for many areas, including fundamental biophysical studies as well as medical monitoring and intervention. Herein, we summarize recent progress in the development and application of novel nanoscale devices for intracellular electrical recording of action potentials and the effort of merging electronic and biological systems seamlessly in three dimensions by using macroporous nanoelectronic scaffolds. The uniqueness of these nanoscale devices for minimally invasive, large-scale, high spatial resolution, and three-dimensional neural activity mapping are highlighted. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Epidermal Inorganic Optoelectronics for Blood Oxygen Measurement.

    PubMed

    Li, Haicheng; Xu, Yun; Li, Xiaomin; Chen, Ying; Jiang, Yu; Zhang, Changxing; Lu, Bingwei; Wang, Jian; Ma, Yinji; Chen, Yihao; Huang, Yin; Ding, Minquang; Su, Honghong; Song, Guofeng; Luo, Yi; Feng, X

    2017-05-01

    Flexible and stretchable optoelectronics, built-in inorganic semiconductor materials, offer a wide range of unprecedented opportunities and will redefine the conventional rigid optoelectronics in biological application and medical measurement. However, a significant bottleneck lies in the brittleness nature of rigid semiconductor materials and the performance's extreme sensitivity to the light intensity variation due to human skin deformation while measuring physical parameters. In this study, the authors demonstrate a systematic strategy to design an epidermal inorganic optoelectronic device by using specific strain-isolation design, nanodiamond thinning, and hybrid transfer printing. The authors propose all-in-one suspension structure to achieve the stretchability and conformability for surrounding environment, and they propose a two-step transfer printing method for hybrid integrating III-V group emitting elements, Si-based photodetector, and interconnects. Owing to the excellent flexibility and stretchability, such device is totally conformal to skin and keeps the constant light transmission between emitting element and photodetector as well as the signal stability due to skin deformation. This method opens a route for traditional inorganic optoelectronics to achieve flexibility and stretchability and improve the performance of optoelectronics for biomedical application. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

    NASA Astrophysics Data System (ADS)

    Biyikli, Necmi; Haider, Ali

    2017-09-01

    In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

  5. Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby

    DOEpatents

    Semonin, Octavi Escala; Luther, Joseph M; Beard, Matthew C; Chen, Hsiang-Yu

    2014-04-01

    A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

  6. Novel optoelectronic devices; Proceedings of the Meeting, The Hague, Netherlands, Mar. 31-Apr. 2, 1987

    NASA Technical Reports Server (NTRS)

    Adams, Michael J. (Editor)

    1987-01-01

    The present conference on novel optoelectronics discusses topics in the state-of-the-art in this field in the Netherlands, quantum wells, integrated optics, nonlinear optical devices and fiber-optic-based devices, ultrafast optics, and nonlinear optics and optical bistability. Attention is given to the production of fiber-optics for telecommunications by means of PCVD, lifetime broadening in quantum wells, nonlinear multiple quantum well waveguide devices, tunable single-wavelength lasers, an Si integrated waveguiding polarimeter, and an electrooptic light modulator using long-range surface plasmons. Also discussed are backward-wave couplers and reflectors, a wavelength-selective all-fiber switching matrix, the impact of ultrafast optics in high-speed electronics, the physics of low energy optical switching, and all-optical logical elements for optical processing.

  7. Synthesis, structure, and optoelectronic properties of II-IV-V 2 materials

    DOE PAGES

    Martinez, Aaron D.; Fioretti, Angela N.; Toberer, Eric S.; ...

    2017-03-07

    II-IV-V 2 materials offer the promise of enhanced functionality in optoelectronic devices due to their rich ternary chemistry. In this review, we consider the potential for new optoelectronic devices based on nitride, phosphide, and arsenide II-IV-V 2 materials. As ternary analogs to the III-V materials, these compounds share many of the attractive features that have made the III-Vs the basis of modern optoelectronic devices (e.g. high mobility, strong optical absorption). Control of cation order parameter in the II-IV-V 2 materials can produce significant changes in optoelectronic properties at fixed chemical composition, including decoupling band gap from lattice parameter. Recent progressmore » has begun to resolve outstanding questions concerning the structure, dopability, and optical properties of the II-IV-V 2 materials. Furthermore, remaining research challenges include growth optimization and integration into heterostructures and devices.« less

  8. Semiconducting Nanocrystals in Mesostructured Thin Films for Optical and Opto-Electronic Device Applications

    DTIC Science & Technology

    2007-03-01

    with HF in methanol. For example, for 4.5 nm In0.91Ga0.09P nanoparticles in toluene, there is a dramatic increase in PL quantum efficiency from 8...opto-electronic device applications, for which quantum efficiencies above 50% are typically required for commercial cost-effectiveness. For the...InGaP nanocrystals……… 14 Figure 4: 2D double- quantum 31P NMR spectrum, 4.5 nm InGaP nanocrystals………….…… 15 Figure 5: TEM of of 10 nm, 5 nm

  9. Gallium Arsenide Monolithic Optoelectronic Circuits

    NASA Astrophysics Data System (ADS)

    Bar-Chaim, N.; Katz, J.; Margalit, S.; Ury, I.; Wilt, D.; Yariv, A.

    1981-07-01

    The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which allow the fabrication of high speed electronic devices which are superior to conventional silicon devices. Monolithic optoelectronic circuits are formed by the integration of optical and electronic devices on a single GaAs substrate. Integration of many devices is most easily accomplished on a semi-insulating (SI) sub-strate. Several laser structures have been fabricated on SI GaAs substrates. Some of these lasers have been integrated with Gunn diodes and with metal semiconductor field effect transistors (MESFETs). An integrated optical repeater has been demonstrated in which MESFETs are used for optical detection and electronic amplification, and a laser is used to regenerate the optical signal. Monolithic optoelectronic circuits have also been constructed on conducting substrates. A heterojunction bipolar transistor driver has been integrated with a laser on an n-type GaAs substrate.

  10. Indium phosphide nanowires and their applications in optoelectronic devices

    PubMed Central

    Zafar, Fateen

    2016-01-01

    Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II–VI and I–VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III–V indium phosphide (InP) nanowires (NWs) using vapour- and solution-phase approaches has been discussed. Doping and core–shell structure formation of InP NWs and their sensitization using higher band gap semiconductor quantum dots is also reported. In the later section of this review, InP NW-polymer hybrid material is highlighted in view of its application as photodiodes. Lastly, a summary and several different perspectives on the use of InP NWs are discussed. PMID:27118920

  11. Indium phosphide nanowires and their applications in optoelectronic devices.

    PubMed

    Zafar, Fateen; Iqbal, Azhar

    2016-03-01

    Group IIIA phosphide nanocrystalline semiconductors are of great interest among the important inorganic materials because of their large direct band gaps and fundamental physical properties. Their physical properties are exploited for various potential applications in high-speed digital circuits, microwave and optoelectronic devices. Compared to II-VI and I-VII semiconductors, the IIIA phosphides have a high degree of covalent bonding, a less ionic character and larger exciton diameters. In the present review, the work done on synthesis of III-V indium phosphide (InP) nanowires (NWs) using vapour- and solution-phase approaches has been discussed. Doping and core-shell structure formation of InP NWs and their sensitization using higher band gap semiconductor quantum dots is also reported. In the later section of this review, InP NW-polymer hybrid material is highlighted in view of its application as photodiodes. Lastly, a summary and several different perspectives on the use of InP NWs are discussed.

  12. Fully implantable, battery-free wireless optoelectronic devices for spinal optogenetics.

    PubMed

    Samineni, Vijay K; Yoon, Jangyeol; Crawford, Kaitlyn E; Jeong, Yu Ra; McKenzie, Kajanna C; Shin, Gunchul; Xie, Zhaoqian; Sundaram, Saranya S; Li, Yuhang; Yang, Min Young; Kim, Jeonghyun; Wu, Di; Xue, Yeguang; Feng, Xue; Huang, Yonggang; Mickle, Aaron D; Banks, Anthony; Ha, Jeong Sook; Golden, Judith P; Rogers, John A; Gereau, Robert W

    2017-11-01

    The advent of optogenetic tools has allowed unprecedented insights into the organization of neuronal networks. Although recently developed technologies have enabled implementation of optogenetics for studies of brain function in freely moving, untethered animals, wireless powering and device durability pose challenges in studies of spinal cord circuits where dynamic, multidimensional motions against hard and soft surrounding tissues can lead to device degradation. We demonstrate here a fully implantable optoelectronic device powered by near-field wireless communication technology, with a thin and flexible open architecture that provides excellent mechanical durability, robust sealing against biofluid penetration and fidelity in wireless activation, thereby allowing for long-term optical stimulation of the spinal cord without constraint on the natural behaviors of the animals. The system consists of a double-layer, rectangular-shaped magnetic coil antenna connected to a microscale inorganic light-emitting diode (μ-ILED) on a thin, flexible probe that can be implanted just above the dura of the mouse spinal cord for effective stimulation of light-sensitive proteins expressed in neurons in the dorsal horn. Wireless optogenetic activation of TRPV1-ChR2 afferents with spinal μ-ILEDs causes nocifensive behaviors and robust real-time place aversion with sustained operation in animals over periods of several weeks to months. The relatively low-cost electronics required for control of the systems, together with the biocompatibility and robust operation of these devices will allow broad application of optogenetics in future studies of spinal circuits, as well as various peripheral targets, in awake, freely moving and untethered animals, where existing approaches have limited utility.

  13. Physical Design and Dynamical Analysis of Resonant-Antiresonant Ag/MgO/GaSe/Al Optoelectronic Microwave Devices

    NASA Astrophysics Data System (ADS)

    Kmail, Renal R. N.; Qasrawi, A. F.

    2015-11-01

    In this work, the design and optical and electrical properties of MgO/GaSe heterojunction devices are reported and discussed. The device was designed using 0.4- μm-thick n-type GaSe as substrate for a 1.6- μm-thick p-type MgO optoelectronic window. The device was characterized by means of ultraviolet-visible optical spectrophotometry in the wavelength region from 200 nm to 1100 nm, current-voltage ( I- V) characteristics, impedance spectroscopy in the range from 1.0 MHz to 1.8 GHz, and microwave amplitude spectroscopy in the frequency range from 1.0 MHz to 3.0 GHz. Optical analysis of the MgO/GaSe heterojunction revealed enhanced absorbing ability of the GaSe below 2.90 eV with an energy bandgap shift from 2.10 eV for the GaSe substrate to 1.90 eV for the heterojunction design. On the other hand, analysis of I- V characteristics revealed a tunneling-type device conducting current by electric field-assisted tunneling of charged particles through a barrier with height of 0.81 eV and depletion region width of 670 nm and 116 nm when forward and reverse biased, respectively. Very interesting features of the device are observed when subjected to alternating current (ac) signal analysis. In particular, the device exhibited resonance-antiresonance behavior and negative capacitance characteristics near 1.0 GHz. The device quality factor was ˜102. In addition, when a small ac signal of Bluetooth amplitude (0.0 dBm) was imposed between the device terminals, the power spectra of the device displayed tunable band-stop filter characteristics with maximum notch frequency of 1.6 GHz. The energy bandgap discontinuity, the resonance-antiresonance behavior, the negative capacitance features, and the tunability of the electromagnetic power spectra at microwave frequencies nominate the Ag/MgO/GaSe/Al device as a promising optoelectronic device for use in multipurpose operations at microwave frequencies.

  14. Charge separation at nanoscale interfaces: energy-level alignment including two-quasiparticle interactions.

    PubMed

    Li, Huashan; Lin, Zhibin; Lusk, Mark T; Wu, Zhigang

    2014-10-21

    The universal and fundamental criteria for charge separation at interfaces involving nanoscale materials are investigated. In addition to the single-quasiparticle excitation, all the two-quasiparticle effects including exciton binding, Coulomb stabilization, and exciton transfer are considered, which play critical roles on nanoscale interfaces for optoelectronic applications. We propose a scheme allowing adding these two-quasiparticle interactions on top of the single-quasiparticle energy level alignment for determining and illuminating charge separation at nanoscale interfaces. Employing the many-body perturbation theory based on Green's functions, we quantitatively demonstrate that neglecting or simplifying these crucial two-quasiparticle interactions using less accurate methods is likely to predict qualitatively incorrect charge separation behaviors at nanoscale interfaces where quantum confinement dominates.

  15. Molecular optoelectronics: the interaction of molecular conduction junctions with light.

    PubMed

    Galperin, Michael; Nitzan, Abraham

    2012-07-14

    The interaction of light with molecular conduction junctions is attracting growing interest as a challenging experimental and theoretical problem on one hand, and because of its potential application as a characterization and control tool on the other. It stands at the interface between two important fields, molecular electronics and molecular plasmonics and has attracted attention as a challenging scientific problem with potentially important technological consequences. Here we review the present state of the art of this field, focusing on several key phenomena and applications: using light as a switching device, using light to control junction transport in the adiabatic and non-adiabatic regimes, light generation in biased junctions and Raman scattering from such systems. This field has seen remarkable progress in the past decade, and the growing availability of scanning tip configurations that can combine optical and electrical probes suggests that further progress towards the goal of realizing molecular optoelectronics on the nanoscale is imminent.

  16. Direct nanoscale imaging of evolving electric field domains in quantum structures.

    PubMed

    Dhar, Rudra Sankar; Razavipour, Seyed Ghasem; Dupont, Emmanuel; Xu, Chao; Laframboise, Sylvain; Wasilewski, Zbig; Hu, Qing; Ban, Dayan

    2014-11-28

    The external performance of quantum optoelectronic devices is governed by the spatial profiles of electrons and potentials within the active regions of these devices. For example, in quantum cascade lasers (QCLs), the electric field domain (EFD) hypothesis posits that the potential distribution might be simultaneously spatially nonuniform and temporally unstable. Unfortunately, there exists no prior means of probing the inner potential profile directly. Here we report the nanoscale measured electric potential distribution inside operating QCLs by using scanning voltage microscopy at a cryogenic temperature. We prove that, per the EFD hypothesis, the multi-quantum-well active region is indeed divided into multiple sections having distinctly different electric fields. The electric field across these serially-stacked quantum cascade modules does not continuously increase in proportion to gradual increases in the applied device bias, but rather hops between discrete values that are related to tunneling resonances. We also report the evolution of EFDs, finding that an incremental change in device bias leads to a hopping-style shift in the EFD boundary--the higher electric field domain expands at least one module each step at the expense of the lower field domain within the active region.

  17. Direct Nanoscale Imaging of Evolving Electric Field Domains in Quantum Structures

    PubMed Central

    Dhar, Rudra Sankar; Razavipour, Seyed Ghasem; Dupont, Emmanuel; Xu, Chao; Laframboise, Sylvain; Wasilewski, Zbig; Hu, Qing; Ban, Dayan

    2014-01-01

    The external performance of quantum optoelectronic devices is governed by the spatial profiles of electrons and potentials within the active regions of these devices. For example, in quantum cascade lasers (QCLs), the electric field domain (EFD) hypothesis posits that the potential distribution might be simultaneously spatially nonuniform and temporally unstable. Unfortunately, there exists no prior means of probing the inner potential profile directly. Here we report the nanoscale measured electric potential distribution inside operating QCLs by using scanning voltage microscopy at a cryogenic temperature. We prove that, per the EFD hypothesis, the multi-quantum-well active region is indeed divided into multiple sections having distinctly different electric fields. The electric field across these serially-stacked quantum cascade modules does not continuously increase in proportion to gradual increases in the applied device bias, but rather hops between discrete values that are related to tunneling resonances. We also report the evolution of EFDs, finding that an incremental change in device bias leads to a hopping-style shift in the EFD boundary – the higher electric field domain expands at least one module each step at the expense of the lower field domain within the active region. PMID:25431158

  18. Direct Nanoscale Imaging of Evolving Electric Field Domains in Quantum Structures

    NASA Astrophysics Data System (ADS)

    Dhar, Rudra Sankar; Razavipour, Seyed Ghasem; Dupont, Emmanuel; Xu, Chao; Laframboise, Sylvain; Wasilewski, Zbig; Hu, Qing; Ban, Dayan

    2014-11-01

    The external performance of quantum optoelectronic devices is governed by the spatial profiles of electrons and potentials within the active regions of these devices. For example, in quantum cascade lasers (QCLs), the electric field domain (EFD) hypothesis posits that the potential distribution might be simultaneously spatially nonuniform and temporally unstable. Unfortunately, there exists no prior means of probing the inner potential profile directly. Here we report the nanoscale measured electric potential distribution inside operating QCLs by using scanning voltage microscopy at a cryogenic temperature. We prove that, per the EFD hypothesis, the multi-quantum-well active region is indeed divided into multiple sections having distinctly different electric fields. The electric field across these serially-stacked quantum cascade modules does not continuously increase in proportion to gradual increases in the applied device bias, but rather hops between discrete values that are related to tunneling resonances. We also report the evolution of EFDs, finding that an incremental change in device bias leads to a hopping-style shift in the EFD boundary - the higher electric field domain expands at least one module each step at the expense of the lower field domain within the active region.

  19. Micro- and nanoscale devices for investigation of epigenetics and chromatin dynamics

    PubMed Central

    2014-01-01

    DNA is the blueprint upon which life is based and transmitted, yet the manner in which chromatin, the dynamic complex of nucleic acids and proteins, is packaged and behaves within the cellular nucleus has only begun to be investigated. The packaging and modifications around the genome have been shown to exert significant influence on cellular behaviour and in turn, human development and disease. However, conventional techniques for studying epigenetic or conformational modifications of chromosomes have inherent limitations, and therefore, new methods based on micro- and nanoscale devices have been sought. Here, we review the development of these devices and explore their use in the study of DNA and chromatin modifications and higher order chromatin structure. PMID:24091454

  20. Inverse spin-valve effect in nanoscale Si-based spin-valve devices

    NASA Astrophysics Data System (ADS)

    Hiep, Duong Dinh; Tanaka, Masaaki; Hai, Pham Nam

    2017-12-01

    We investigated the spin-valve effect in nano-scale silicon (Si)-based spin-valve devices using a Fe/MgO/Ge spin injector/detector deposited on Si by molecular beam epitaxy. For a device with a 20 nm Si channel, we observed clear magnetoresistance up to 3% at low temperature when a magnetic field was applied in the film plane along the Si channel transport direction. A large spin-dependent output voltage of 20 mV was observed at a bias voltage of 0.9 V at 15 K, which is among the highest values in lateral spin-valve devices reported so far. Furthermore, we observed that the sign of the spin-valve effect is reversed at low temperatures, suggesting the possibility of a spin-blockade effect of defect states in the MgO/Ge tunneling barrier.

  1. The size-quantized oscillations of the optical-phonon-limited electron mobility in AlN/GaN/AlN nanoscale heterostructures

    NASA Astrophysics Data System (ADS)

    Pokatilov, E. P.; Nika, D. L.; Askerov, A. S.; Zincenco, N. D.; Balandin, A. A.

    2007-12-01

    nanometer scale thickness by taking into account multiple quantized electron subbands and the confined optical phonon dispersion. It was shown that the inter-subband electronic transitions play an important role in limiting the electron mobility in the heterostructures when the energy separation between one of the size-quantized excited electron subbands and the Fermi energy becomes comparable to the optical phonon energy. The latter leads to the oscillatory dependence of the electron mobility on the thickness of the heterostructure conduction channel layer. This effect is observable at room temperature and over a wide range of the carrier densities. The developed formalism and calculation procedure are readily applicable to other material systems. The described effect can be used for fine-tuning the confined electron and phonon states in the nanoscale heterostructures in order to achieve performance enhancement of the nanoscale electronic and optoelectronic devices.

  2. Modelling of optoelectronic circuits based on resonant tunneling diodes

    NASA Astrophysics Data System (ADS)

    Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.

    2017-08-01

    Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

  3. Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics.

    PubMed

    Jariwala, Deep; Davoyan, Artur R; Tagliabue, Giulia; Sherrott, Michelle C; Wong, Joeson; Atwater, Harry A

    2016-09-14

    We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.

  4. Nanoscale temperature mapping in operating microelectronic devices

    DOE PAGES

    Mecklenburg, Matthew; Hubbard, William A.; White, E. R.; ...

    2015-02-05

    We report that modern microelectronic devices have nanoscale features that dissipate power nonuniformly, but fundamental physical limits frustrate efforts to detect the resulting temperature gradients. Contact thermometers disturb the temperature of a small system, while radiation thermometers struggle to beat the diffraction limit. Exploiting the same physics as Fahrenheit’s glass-bulb thermometer, we mapped the thermal expansion of Joule-heated, 80-nanometer-thick aluminum wires by precisely measuring changes in density. With a scanning transmission electron microscope (STEM) and electron energy loss spectroscopy (EELS), we quantified the local density via the energy of aluminum’s bulk plasmon. Rescaling density to temperature yields maps with amore » statistical precision of 3 kelvin/hertz ₋1/2, an accuracy of 10%, and nanometer-scale resolution. Lastly, many common metals and semiconductors have sufficiently sharp plasmon resonances to serve as their own thermometers.« less

  5. Electronic and optoelectronic materials and devices inspired by nature

    NASA Astrophysics Data System (ADS)

    Meredith, P.; Bettinger, C. J.; Irimia-Vladu, M.; Mostert, A. B.; Schwenn, P. E.

    2013-03-01

    Inorganic semiconductors permeate virtually every sphere of modern human existence. Micro-fabricated memory elements, processors, sensors, circuit elements, lasers, displays, detectors, etc are ubiquitous. However, the dawn of the 21st century has brought with it immense new challenges, and indeed opportunities—some of which require a paradigm shift in the way we think about resource use and disposal, which in turn directly impacts our ongoing relationship with inorganic semiconductors such as silicon and gallium arsenide. Furthermore, advances in fields such as nano-medicine and bioelectronics, and the impending revolution of the ‘ubiquitous sensor network’, all require new functional materials which are bio-compatible, cheap, have minimal embedded manufacturing energy plus extremely low power consumption, and are mechanically robust and flexible for integration with tissues, building structures, fabrics and all manner of hosts. In this short review article we summarize current progress in creating materials with such properties. We focus primarily on organic and bio-organic electronic and optoelectronic systems derived from or inspired by nature, and outline the complex charge transport and photo-physics which control their behaviour. We also introduce the concept of electrical devices based upon ion or proton flow (‘ionics and protonics’) and focus particularly on their role as a signal interface with biological systems. Finally, we highlight recent advances in creating working devices, some of which have bio-inspired architectures, and summarize the current issues, challenges and potential solutions. This is a rich new playground for the modern materials physicist.

  6. David Adler Lectureship Award Talk: III-V Semiconductor Nanowires on Silicon for Future Devices

    NASA Astrophysics Data System (ADS)

    Riel, Heike

    Bottom-up grown nanowires are very attractive materials for direct integration of III-V semiconductors on silicon thus opening up new possibilities for the design and fabrication of nanoscale devices for electronic, optoelectronic as well as quantum information applications. Template-Assisted Selective Epitaxy (TASE) allows the well-defined and monolithic integration of complex III-V nanostructures and devices on silicon. Achieving atomically abrupt heterointerfaces, high crystal quality and control of dimension down to 1D nanowires enabled the demonstration of FETs and tunnel devices based on In(Ga)As and GaSb. Furthermore, the strong influence of strain on nanowires as well as results on quantum transport studies of InAs nanowires with well-defined geometry will be presented.

  7. One-dimensional CdS nanostructures: a promising candidate for optoelectronics.

    PubMed

    Li, Huiqiao; Wang, Xi; Xu, Junqi; Zhang, Qi; Bando, Yoshio; Golberg, Dmitri; Ma, Ying; Zhai, Tianyou

    2013-06-11

    As a promising candidate for optoelectronics, one-dimensional CdS nanostructures have drawn great scientific and technical interest due to their interesting fundamental properties and possibilities of utilization in novel promising optoelectronical devices with augmented performance and functionalities. This progress report highlights a selection of important topics pertinent to optoelectronical applications of one-dimensional CdS nanostructures over the last five years. This article begins with the description of rational design and controlled synthesis of CdS nanostructure arrays, alloyed nanostructucures and kinked nanowire superstructures, and then focuses on the optoelectronical properties, and applications including cathodoluminescence, lasers, light-emitting diodes, waveguides, field emitters, logic circuits, memory devices, photodetectors, gas sensors, photovoltaics and photoelectrochemistry. Finally, the general challenges and the potential future directions of this exciting area of research are highlighted. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Electronic and optoelectronic device applications based on ReS2

    NASA Astrophysics Data System (ADS)

    Liu, Erfu; Long, Mingsheng; Wang, Yaojia; Pan, Yiming; Ho, Chinghwa; Wang, Baigeng; Miao, Feng

    Rhenium disulfide (ReS2) is a unique semiconducting TMD with distorted 1T structure and weak interlayer coupling. We have previously investigated its in-plane anisotropic property and electronic applications on FET and digital inverters. In this talk, we will present high responsivity phototransistors based on few-layer ReS2. Depending on the back gate voltage, source drain bias and incident optical light intensity, the maximum attainable photoresponsivity can reach as high as 88,600 A W-1, which is one of the highest value among individual two-dimensional materials with similar device structures. Such high photoresponsivity is attributed to the increased light absorption as well as the gain enhancement due to the existence of trap states in the few-layer ReS2 flakes. The existence of trap states is proved by temperature dependent transport measurements. It further enables the detection of weak signals. Our studies underscore ReS2 as a promising material for future electronic and sensitive optoelectronic applications.

  9. Increased Optoelectronic Quality and Uniformity of Hydrogenated p-InP Thin Films

    DOE PAGES

    Wang, Hsin -Ping; Sutter-Fella, Carolin M.; Lobaccaro, Peter; ...

    2016-06-08

    The thin-film vapor–liquid–solid (TF-VLS) growth technique presents a promising route for high quality, scalable, and cost-effective InP thin films for optoelectronic devices. Toward this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referred to as hydrogenation) results in improved optoelectronic quality as well as lateral optoelectronic uniformity. A combination of low temperature photoluminescence and transient photocurrent spectroscopy was used to analyze the energy position and relative density of defect states before and after hydrogenation. Notably, hydrogenation reduces themore » relative intragap defect density by 1 order of magnitude. As a metric to monitor lateral optoelectronic uniformity of polycrystalline TF-VLS InP, photoluminescence and electron beam induced current mapping reveal homogenization of the grain versus grain boundary upon hydrogenation. At the device level, we measured more than 260 TF-VLS InP solar cells before and after hydrogenation to verify the improved optoelectronic properties. Hydrogenation increased the average open-circuit voltage (V OC) of individual TF-VLS InP solar cells by up to 130 mV and reduced the variance in V OC for the analyzed devices.« less

  10. Dental impression technique using optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Sinescu, Cosmin; Barua, Souman; Topala, Florin Ionel; Negrutiu, Meda Lavinia; Duma, Virgil-Florin; Gabor, Alin Gabriel; Zaharia, Cristian; Bradu, Adrian; Podoleanu, Adrian G.

    2018-03-01

    INTRODUCTION: The use of Optical Coherence Tomography (OCT) as a non-invasive and high precision quantitative information providing tool has been well established by researches within the last decade. The marginal discrepancy values can be scrutinized in optical biopsy made in three dimensional (3D) micro millimetre scale and reveal detailed qualitative and quantitative information of soft and hard tissues. OCT-based high resolution 3D images can provide a significant impact on finding recurrent caries, restorative failure, analysing the precision of crown preparation, and prosthetic elements marginal adaptation error with the gingiva and dental hard tissues. During the CAD/CAM process of prosthodontic restorations, the circumvent of any error is important for the practitioner and the technician to reduce waste of time and material. Additionally, OCT images help to achieve a new or semi-skilled practitioner to analyse their crown preparation works and help to develop their skills faster than in a conventional way. The aim of this study is to highlight the advantages of OCT in high precision prosthodontic restorations. MATERIALS AND METHODS: 25 preparations of frontal and lateral teeth were performed for 7 different patients. The impressions of the prosthetic fields were obtained both using a conventional optoelectronic system (Apolo Di, Syrona) and a Spectral Domain using OCT (Dental prototype, working at 860 nm). For the conventional impression technique the preparation margins were been prelevated by gingival impregnated cords. No specific treatments were performed by the OCT impression technique. RESULTS: The scanning performed by conventional optoelectronic system proved to be quick and accurate in terms of impression technology. The results were represented by 3D virtual models obtained after the scanning procedure was completed. In order to obtain a good optical impression a gingival retraction cord was inserted between the prepared tooth and the gingival

  11. Highly efficient flexible optoelectronic devices using metal nanowire-conducting polymer composite transparent electrode

    NASA Astrophysics Data System (ADS)

    Jung, Eui Dae; Nam, Yun Seok; Seo, Houn; Lee, Bo Ram; Yu, Jae Choul; Lee, Sang Yun; Kim, Ju-Young; Park, Jang-Ung; Song, Myoung Hoon

    2015-09-01

    Here, we report a comprehensive analysis of the electrical, optical, mechanical, and surface morphological properties of composite nanostrutures based on silver nanowires (AgNW) and PEDOT:PSS conducting polymer for the use as flexible and transparent electrodes. Compared to ITO or the single material of AgNW or PEDOT:PSS, the AgNW/PEDOT:PSS composite electrode showed high electrical conductivity with a low sheet resistance of 26.8 Ω/sq at 91% transmittance (at 550 nm), improves surface smoothness, and enhances mechanical properties assisted by an amphiphilic fluoro-surfactant. The polymeric light-emitting diodes (PLEDs) and organic solar cells (OSCs) using the AgNW/PEDOT:PSS composite electrode showed higher device performances than those with AgNW and PEDOT:PSS electrodes and excellent flexibility under bending test. These results indicates that the AgNW/PEDOT:PSS composite presented is a good candidate as next-generation transparent elelctrodes for applications into flexible optoelectronic devices. [Figure not available: see fulltext.

  12. Biomimetic patterned surfaces for controllable friction in micro- and nanoscale devices

    NASA Astrophysics Data System (ADS)

    Singh, Arvind; Suh, Kahp-Yang

    2013-12-01

    Biomimetics is the study and simulation of biological systems for desired functional properties. It involves the transformation of underlying principles discovered in nature into man-made technologies. In this context, natural surfaces have significantly inspired and motivated new solutions for micro- and nano-scale devices (e.g., Micro/Nano-Electro-Mechanical Systems, MEMS/NEMS) towards controllable friction, during their operation. As a generic solution to reduce friction at small scale, various thin films/coatings have been employed in the last few decades. In recent years, inspiration from `Lotus Effect' has initiated a new research direction for controllable friction with biomimetic patterned surfaces. By exploiting the intrinsic hydrophobicity and ability to reduce contact area, such micro- or nano-patterned surfaces have demonstrated great strength and potential for applications in MEMS/NEMS devices. This review highlights recent advancements on the design, development and performance of these biomimetic patterned surfaces. Also, we present some hybrid approaches to tackle current challenges in biomimetic tribological applications for MEMS/NEMS devices.

  13. Improving Efficiency of III-N Quantum Well Based Optoelectronic Devices through Active Region Design and Growth Techniques

    NASA Astrophysics Data System (ADS)

    Young, Nathan Garrett

    The III-Nitride materials system provides a fascinating platform for developing optoelectronic devices, such as solar cells and LEDs, which have the power to dramatically improve the efficiency of our power consumption and reduce our environmental footprint. Finding ways to make these devices more efficient is key to driving their widespread adoption. This dissertation focuses on the intersection of challenges in physics and metalorganic chemical vapor deposition (MOCVD) growth at the nanoscale when designing for device efficiency. In order to create the best possible InGaN solar cell, a multiple quantum well (MQW) active region design had to be employed to prevent strain relaxation related degradation. There were two competing challenges for MQW active region design and growth. First, it was observed current collection efficiency improved with thinner quantum barriers, which promoted efficient tunneling transport instead of inefficiency thermally activated escape. Second, GaN barriers could planarize surface defects in the MQW region under the right conditions and when grown thick enough. A two-step growth method for thinner quantum barriers was developed that simultaneously allowed for tunneling transport and planarized V-defects. Barriers as thin as 4 nm were employed in MQW active regions with up to 30 periods without structural or electrical degradation, leading to record performance. Application of dielectric optical coatings greatly reduced surface reflections and allowed a second pass of light through the device. This both demonstrated the feasibility of multijunction solar integration and boosted conversion efficiency to record levels for an InGaN solar cell. III-N LEDs have achieved state-of-the-art performance for decades, but still suffer from the phenomena of efficiency droop, where device efficiency drops dramatically at high power operation. Droop is exacerbated by the polarization-induced electric fields in InGaN quantum wells, which originate from

  14. Maximum efficiency of state-space models of nanoscale energy conversion devices

    NASA Astrophysics Data System (ADS)

    Einax, Mario; Nitzan, Abraham

    2016-07-01

    The performance of nano-scale energy conversion devices is studied in the framework of state-space models where a device is described by a graph comprising states and transitions between them represented by nodes and links, respectively. Particular segments of this network represent input (driving) and output processes whose properly chosen flux ratio provides the energy conversion efficiency. Simple cyclical graphs yield Carnot efficiency for the maximum conversion yield. We give general proof that opening a link that separate between the two driving segments always leads to reduced efficiency. We illustrate these general result with simple models of a thermoelectric nanodevice and an organic photovoltaic cell. In the latter an intersecting link of the above type corresponds to non-radiative carriers recombination and the reduced maximum efficiency is manifested as a smaller open-circuit voltage.

  15. Maximum efficiency of state-space models of nanoscale energy conversion devices.

    PubMed

    Einax, Mario; Nitzan, Abraham

    2016-07-07

    The performance of nano-scale energy conversion devices is studied in the framework of state-space models where a device is described by a graph comprising states and transitions between them represented by nodes and links, respectively. Particular segments of this network represent input (driving) and output processes whose properly chosen flux ratio provides the energy conversion efficiency. Simple cyclical graphs yield Carnot efficiency for the maximum conversion yield. We give general proof that opening a link that separate between the two driving segments always leads to reduced efficiency. We illustrate these general result with simple models of a thermoelectric nanodevice and an organic photovoltaic cell. In the latter an intersecting link of the above type corresponds to non-radiative carriers recombination and the reduced maximum efficiency is manifested as a smaller open-circuit voltage.

  16. PREFACE: Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications II (Symposium K, E-MRS 2009 Spring Meeting)

    NASA Astrophysics Data System (ADS)

    Nötzel, Richard

    2009-07-01

    This volume of IOP Conference Series: Materials Science and Engineering contains papers that were presented at the special symposium K at the EMRS 2009 Spring Meeting held 8-12 June in Strasbourg, France, which was entitled 'Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications II'. Thanks to the broad interest a large variety of quantum dots and quantum wires and related nanostructures and their application in devices could be covered. There was significant progress in the epitaxial growth of semiconductor quantum dots seen in the operation of high-power, as well as mode locked laser diodes and the lateral positioning of quantum dots on patterned substrates or by selective area growth for future single quantum dot based optoelectronic and electronic devices. In the field of semiconductor nanowires high quality, almost twin free structures are now available together with a new degree of freedom for band structure engineering based on alternation of the crystal structure. In the search for Si based light emitting structures, nanocrystals and miniband-related near infrared luminescence of Si/Ge quantum dot superlattices with high quantum efficiency were reported. These highlights, among others, and the engaged discussions of the scientists, engineers and students brought together at the symposium emphasize how active the field of semiconductor nanostructures and their applications in devices is, so that we can look forward to the progress to come. Guest Editor Richard Nötzel COBRA Research Institute Department of Applied Physics Eindhoven University of Technology 5600 MB Eindhoven The Netherlands Tel.: +31 40 247 2047; fax: +31 40 246 1339 E-mail address: r.noetzel@tue.nl

  17. Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures.

    PubMed

    Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

    2016-10-27

    Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures.

  18. Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures

    PubMed Central

    Lee, Jae Yoon; Shin, Jun-Hwan; Lee, Gwan-Hyoung; Lee, Chul-Ho

    2016-01-01

    Two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDCs) and black phosphorous have drawn tremendous attention as an emerging optical material due to their unique and remarkable optical properties. In addition, the ability to create the atomically-controlled van der Waals (vdW) heterostructures enables realizing novel optoelectronic devices that are distinct from conventional bulk counterparts. In this short review, we first present the atomic and electronic structures of 2D semiconducting TMDCs and their exceptional optical properties, and further discuss the fabrication and distinctive features of vdW heterostructures assembled from different kinds of 2D materials with various physical properties. We then focus on reviewing the recent progress on the fabrication of 2D semiconductor optoelectronic devices based on vdW heterostructures including photodetectors, solar cells, and light-emitting devices. Finally, we highlight the perspectives and challenges of optoelectronics based on 2D semiconductor heterostructures. PMID:28335321

  19. Metal Complexes for Organic Optoelectronic Applications

    NASA Astrophysics Data System (ADS)

    Huang, Liang

    Organic optoelectronic devices have drawn extensive attention by over the past two decades. Two major applications for Organic optoelectronic devices are efficient organic photovoltaic devices(OPV) and organic light emitting diodes (OLED). Organic Solar cell has been proven to be compatible with the low cost, large area bulk processing technology and processed high absorption efficiencies compared to inorganic solar cells. Organic light emitting diodes are a promising approach for display and solid state lighting applications. To improve the efficiency, stability, and materials variety for organic optoelectronic devices, several emissive materials, absorber-type materials, and charge transporting materials were developed and employed in various device settings. Optical, electrical, and photophysical studies of the organic materials and their corresponding devices were thoroughly carried out. In this thesis, Chapter 1 provides an introduction to the background knowledge of OPV and OLED research fields presented. Chapter 2 discusses new porphyrin derivatives- azatetrabenzylporphyrins for OPV and near infrared OLED applications. A modified synthetic method is utilized to increase the reaction yield of the azatetrabenzylporphyrin materials and their photophysical properties, electrochemical properties are studied. OPV devices are also fabricated using Zinc azatetrabenzylporphyrin as donor materials. Pt(II) azatetrabenzylporphyrin were also synthesized and used in near infra-red OLED to achieve an emission over 800 nm with reasonable external quantum efficiencies. Chapter 3, discusses the synthesis, characterization, and device evaluation of a series of tetradentate platinum and palladium complexesfor single doped white OLED applications and RGB white OLED applications. Devices employing some of the developed emitters demonstrated impressively high external quantum efficiencies within the range of 22%-27% for various emitter concentrations. And the palladium complex, i

  20. Single molecule-level study of donor-acceptor interactions and nanoscale environment in blends

    NASA Astrophysics Data System (ADS)

    Quist, Nicole; Grollman, Rebecca; Rath, Jeremy; Robertson, Alex; Haley, Michael; Anthony, John; Ostroverkhova, Oksana

    2017-02-01

    Organic semiconductors have attracted considerable attention due to their applications in low-cost (opto)electronic devices. The most successful organic materials for applications that rely on charge carrier generation, such as solar cells, utilize blends of several types of molecules. In blends, the local environment strongly influences exciton and charge carrier dynamics. However, relationship between nanoscale features and photophysics is difficult to establish due to the lack of necessary spatial resolution. We use functionalized fluorinated pentacene (Pn) molecule as single molecule probes of intermolecular interactions and of the nanoscale environment in blends containing donor and acceptor molecules. Single Pn donor (D) molecules were imaged in PMMA in the presence of acceptor (A) molecules using wide-field fluorescence microscopy. Two sample configurations were realized: (i) a fixed concentration of Pn donor molecules, with increasing concentration of acceptor molecules (functionalized indenflouorene or PCBM) and (ii) a fixed concentration of acceptor molecules with an increased concentration of the Pn donor. The D-A energy transfer and changes in the donor emission due to those in the acceptor- modified polymer morphology were quantified. The increase in the acceptor concentration was accompanied by enhanced photobleaching and blinking of the Pn donor molecules. To better understand the underlying physics of these processes, we modeled photoexcited electron dynamics using Monte Carlo simulations. The simulated blinking dynamics were then compared to our experimental data, and the changes in the transition rates were related to the changes in the nanoscale environment. Our study provides insight into evolution of nanoscale environment during the formation of bulk heterojunctions.

  1. Fabricating the spherical and flake silver powder used for the optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Ju, Wei; Ma, Wangjing; Zhang, Fangzhi; Chen, Yixiang; Xie, Jinpeng

    2018-01-01

    The spherical and flake silver powder with different particle size for the optoelectronic devices was partly prepared by using chemical reduction and ball milling method, and charactered by scanning electron microscope (SEM), X-ray diffraction (XRD), laser particle size analyzer and thermo-gravimetric(TG) analyzer. The particle size of three series of spherical silver powder fabricated by chemical reduction is about 1.5μm, 1μm and 0.6μm, respectively; after being mechanical milling, the particle size of flake silver powder with high flaky rate is about 10μm, 6μm and 2μm respectively. Thermo gravimetric (TG) and XRD analyses showed that the silver powders have high purity and crystalline, and then the laser particle size and SEM analyses showed that the silver powders has good uniformity.

  2. Gate-Controlled BP-WSe2 Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics.

    PubMed

    Li, Dong; Wang, Biao; Chen, Mingyuan; Zhou, Jun; Zhang, Zengxing

    2017-06-01

    p-n junctions play an important role in modern semiconductor electronics and optoelectronics, and field-effect transistors are often used for logic circuits. Here, gate-controlled logic rectifiers and logic optoelectronic devices based on stacked black phosphorus (BP) and tungsten diselenide (WSe 2 ) heterojunctions are reported. The gate-tunable ambipolar charge carriers in BP and WSe 2 enable a flexible, dynamic, and wide modulation on the heterojunctions as isotype (p-p and n-n) and anisotype (p-n) diodes, which exhibit disparate rectifying and photovoltaic properties. Based on such characteristics, it is demonstrated that BP-WSe 2 heterojunction diodes can be developed for high-performance logic rectifiers and logic optoelectronic devices. Logic optoelectronic devices can convert a light signal to an electric one by applied gate voltages. This work should be helpful to expand the applications of 2D crystals. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Nanoscale devices based on plasmonic coaxial waveguide resonators

    NASA Astrophysics Data System (ADS)

    Mahigir, A.; Dastmalchi, P.; Shin, W.; Fan, S.; Veronis, G.

    2015-02-01

    Waveguide-resonator systems are particularly useful for the development of several integrated photonic devices, such as tunable filters, optical switches, channel drop filters, reflectors, and impedance matching elements. In this paper, we introduce nanoscale devices based on plasmonic coaxial waveguide resonators. In particular, we investigate threedimensional nanostructures consisting of plasmonic coaxial stub resonators side-coupled to a plasmonic coaxial waveguide. We use coaxial waveguides with square cross sections, which can be fabricated using lithography-based techniques. The waveguides are placed on top of a silicon substrate, and the space between inner and outer coaxial metals is filled with silica. We use silver as the metal. We investigate structures consisting of a single plasmonic coaxial resonator, which is terminated either in a short or an open circuit, side-coupled to a coaxial waveguide. We show that the incident waveguide mode is almost completely reflected on resonance, while far from the resonance the waveguide mode is almost completely transmitted. We also show that the properties of the waveguide systems can be accurately described using a single-mode scattering matrix theory. The transmission and reflection coefficients at waveguide junctions are either calculated using the concept of the characteristic impedance or are directly numerically extracted using full-wave three-dimensional finite-difference frequency-domain simulations.

  4. Zinc oxide wide band gap semiconductor for optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Choopun, Supab

    The main objective of this dissertation is to study the key aspects of ZnO-based materials for fabrication of wide band gap optoelectronic devices. ZnO has received attention due to its direct band gap, alloying and doping capabilities. It has similar properties to that of GaN, a material system that has become very important for the fabrication of blue light emitting diodes, laser diodes, detectors, etc. In this study, ZnO and related materials were grown in thin film form on c-plane sapphire substrates by pulsed laser deposition and then, these films were mainly studied in terms of their structural, optical and electrical properties. The studied key aspects include growth and optimization of device quality ZnO films, band gap tailoring of ZnO films by alloying, fabrication of quantum well structures, and impurity doping for n-type and p-type ZnO films. The growth and optimization of ZnO films have been studied as a function of substrate temperature and oxygen background pressure. By tuning the growth temperature and oxygen pressure during the initial and final stages of growth, it was possible to control desirable surface, interface chemistry structure, crystalline quality, and optoelectronic properties of the films while maintaining high quality epitaxy. Band gap tailoring has been studied by alloying of ZnO with MgO. MgZnO alloy films exhibit two phases, hexagonal and cubic, depending on the Mg concentration in the MgZnO lattice. The band gap energy of MgZnO alloys can be varied in a wide range from 3.3 eV to 4.0 eV for hexagonal structured films and 4.0 to 7.6 eV for cubic structured films. Studies both n-type as well as p-type doping and activation in ZnO films are reported. It was found that In-doped ZnO films with high optical transparency and high electrical conductivity can be grown at temperature below 300°C. P-type ZnO films have been studied by using a cationic-codoping method. Weak p-type conductivity in ZnO films was obtained from Cu and Al codoping

  5. Multi-paradigm simulation at nanoscale: Methodology and application to functional carbon material

    NASA Astrophysics Data System (ADS)

    Su, Haibin

    2012-12-01

    Multiparadigm methods to span the scales from quantum mechanics to practical issues of functional nanoassembly and nanofabrication are enabling first principles predictions to guide and complement the experimental developments by designing and optimizing computationally the materials compositions and structures to assemble nanoscale systems with the requisite properties. In this talk, we employ multi-paradigm approaches to investigate functional carbon materials with versatile character, including fullerene, carbon nanotube (CNT), graphene, and related hybrid structures, which have already created an enormous impact on next generation nano devices. The topics will cover the reaction dynamics of C60 dimerization and the more challenging complex tubular fullerene formation process in the peapod structures; the computational design of a new generation of peapod nano-oscillators, the predicted magnetic state in Nano Buds; opto-electronic properties of graphene nanoribbons; and disorder / vibronic effects on transport in carbonrich materials.

  6. A new method for motion capture of the scapula using an optoelectronic tracking device: a feasibility study.

    PubMed

    Šenk, Miroslav; Chèze, Laurence

    2010-06-01

    Optoelectronic tracking systems are rarely used in 3D studies examining shoulder movements including the scapula. Among the reasons is the important slippage of skin markers with respect to scapula. Methods using electromagnetic tracking devices are validated and frequently applied. Thus, the aim of this study was to develop a new method for in vivo optoelectronic scapular capture dealing with the accepted accuracy issues of validated methods. Eleven arm positions in three anatomical planes were examined using five subjects in static mode. The method was based on local optimisation, and recalculation procedures were made using a set of five scapular surface markers. The scapular rotations derived from the recalculation-based method yielded RMS errors comparable with the frequently used electromagnetic scapular methods (RMS up to 12.6° for 150° arm elevation). The results indicate that the present method can be used under careful considerations for 3D kinematical studies examining different shoulder movements.

  7. Methods and devices for fabricating three-dimensional nanoscale structures

    DOEpatents

    Rogers, John A.; Jeon, Seokwoo; Park, Jangung

    2010-04-27

    The present invention provides methods and devices for fabricating 3D structures and patterns of 3D structures on substrate surfaces, including symmetrical and asymmetrical patterns of 3D structures. Methods of the present invention provide a means of fabricating 3D structures having accurately selected physical dimensions, including lateral and vertical dimensions ranging from 10s of nanometers to 1000s of nanometers. In one aspect, methods are provided using a mask element comprising a conformable, elastomeric phase mask capable of establishing conformal contact with a radiation sensitive material undergoing photoprocessing. In another aspect, the temporal and/or spatial coherence of electromagnetic radiation using for photoprocessing is selected to fabricate complex structures having nanoscale features that do not extend entirely through the thickness of the structure fabricated.

  8. One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application

    PubMed Central

    2014-01-01

    In this work, we presented a surface mechanical attrition treatment (SMAT)-assisted approach to the synthesis of one-dimensional copper oxide nanowires (CuO NWs) for nanodevices applications. The as-prepared CuO NWs have diameter and the length of 50 ~ 200 nm and 5 ~ 20 μm, respectively, with a preferential growth orientation along [1 1¯ 0] direction. Interestingly, nanofield-effect transistor (nanoFET) based on individual CuO NW exhibited typical p-type electrical conduction, with a hole mobility of 0.129 cm2V-1 s-1 and hole concentration of 1.34 × 1018 cm-3, respectively. According to first-principle calculations, such a p-type electrical conduction behavior was related to the oxygen vacancies in CuO NWs. What is more, the CuO NW device was sensitive to visible light illumination with peak sensitivity at 600 nm. The responsitivity, conductive gain, and detectivity are estimated to be 2.0 × 102 A W-1, 3.95 × 102 and 6.38 × 1011 cm Hz1/2 W-1, respectively, which are better than the devices composed of other materials. Further study showed that nanophotodetectors assembled on flexible polyethylene terephthalate (PET) substrate can work under different bending conditions with good reproducibility. The totality of the above results suggests that the present CuO NWs are potential building blocks for assembling high-performance optoelectronic devices. PMID:25489288

  9. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz.

    PubMed

    Moustakas, Theodore D; Paiella, Roberto

    2017-10-01

    This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, 'visible blind' and 'solar blind' detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

  10. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

    NASA Astrophysics Data System (ADS)

    Moustakas, Theodore D.; Paiella, Roberto

    2017-10-01

    This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, ‘visible blind’ and ‘solar blind’ detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

  11. Highly conductive transparent organic electrodes with multilayer structures for rigid and flexible optoelectronics.

    PubMed

    Guo, Xiaoyang; Liu, Xingyuan; Lin, Fengyuan; Li, Hailing; Fan, Yi; Zhang, Nan

    2015-05-27

    Transparent electrodes are essential components for optoelectronic devices, such as touch panels, organic light-emitting diodes, and solar cells. Indium tin oxide (ITO) is widely used as transparent electrode in optoelectronic devices. ITO has high transparency and low resistance but contains expensive rare elements, and ITO-based devices have poor mechanical flexibility. Therefore, alternative transparent electrodes with excellent opto-electrical performance and mechanical flexibility will be greatly demanded. Here, organics are introduced into dielectric-metal-dielectric structures to construct the transparent electrodes on rigid and flexible substrates. We show that organic-metal-organic (OMO) electrodes have excellent opto-electrical properties (sheet resistance of below 10 Ω sq(-1) at 85% transmission), mechanical flexibility, thermal and environmental stabilities. The OMO-based polymer photovoltaic cells show performance comparable to that of devices based on ITO electrodes. This OMO multilayer structure can therefore be used to produce transparent electrodes suitable for use in a wide range of optoelectronic devices.

  12. Interlayer exciton optoelectronics in a 2D heterostructure p–n junction

    DOE PAGES

    Ross, Jason S.; Rivera, Pasqual; Schaibley, John; ...

    2016-12-22

    Semiconductor heterostructures are backbones for solid-state-based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures have enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices, including a large binding energy, micron-scale in-plane drift-diffusion, and a long population and valley polarization lifetime. Here, we demonstrate interlayer exciton optoelectronics based on electrostatically defined lateral p–n junctions in a MoSe 2–WSe 2 heterobilayer. Applying a forward bias enablesmore » the first observation of electroluminescence from interlayer excitons. At zero bias, the p–n junction functions as a highly sensitive photodetector, where the wavelength-dependent photocurrent measurement allows the direct observation of resonant optical excitation of the interlayer exciton. The resulting photocurrent amplitude from the interlayer exciton is about 200 times smaller than the resonant excitation of intralayer exciton. This implies that the interlayer exciton oscillator strength is 2 orders of magnitude smaller than that of the intralayer exciton due to the spatial separation of electron and hole to the opposite layers. Lastly, these results lay the foundation for exploiting the interlayer exciton in future 2D heterostructure optoelectronic devices.« less

  13. Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction.

    PubMed

    Ross, Jason S; Rivera, Pasqual; Schaibley, John; Lee-Wong, Eric; Yu, Hongyi; Taniguchi, Takashi; Watanabe, Kenji; Yan, Jiaqiang; Mandrus, David; Cobden, David; Yao, Wang; Xu, Xiaodong

    2017-02-08

    Semiconductor heterostructures are backbones for solid-state-based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures have enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices, including a large binding energy, micron-scale in-plane drift-diffusion, and a long population and valley polarization lifetime. Here, we demonstrate interlayer exciton optoelectronics based on electrostatically defined lateral p-n junctions in a MoSe 2 -WSe 2 heterobilayer. Applying a forward bias enables the first observation of electroluminescence from interlayer excitons. At zero bias, the p-n junction functions as a highly sensitive photodetector, where the wavelength-dependent photocurrent measurement allows the direct observation of resonant optical excitation of the interlayer exciton. The resulting photocurrent amplitude from the interlayer exciton is about 200 times smaller than the resonant excitation of intralayer exciton. This implies that the interlayer exciton oscillator strength is 2 orders of magnitude smaller than that of the intralayer exciton due to the spatial separation of electron and hole to the opposite layers. These results lay the foundation for exploiting the interlayer exciton in future 2D heterostructure optoelectronic devices.

  14. Improving device performance of perovskite solar cells by micro-nanoscale composite mesoporous TiO2

    NASA Astrophysics Data System (ADS)

    Ting, Hungkit; Zhang, Danfei; He, Yihao; Wei, Shiyuan; Li, Tieyi; Sun, Weihai; Wu, Cuncun; Chen, Zhijian; Wang, Qi; Zhang, Guoyi; Xiao, Lixin

    2018-02-01

    In perovskite solar cells, the morphology of the porous TiO2 electron transport layer (ETL) largely determines the quality of the perovskites. Here, we chose micro-scale TiO2 (0.2 µm) and compared it with the conventional nanoscale TiO2 (20 nm) in relation to the crystallinity of perovskites. The results show that the micro-scale TiO2 is favorable for increasing the grain size of the perovskites and enhancing the light scattering. However, the oversized TiO2 results in an uneven surface. The evenness of the perovskites can be improved by nanoscale TiO2, while the crystallinity and compactness are not as good as those of the films based on micro-scale TiO2. To combine the advantages of both micro-scale and nanoscale TiO2, by mixing 0.2 µm/20 nm TiO2 with a ratio of 1:2 as the composite ETL, the device average power conversion efficiency was increased to 11.2% from 9.9% in the case of only 20 nm TiO2.

  15. Stoichiometric control of lead chalcogenide nanocrystal solids to enhance their electronic and optoelectronic device performance.

    PubMed

    Oh, Soong Ju; Berry, Nathaniel E; Choi, Ji-Hyuk; Gaulding, E Ashley; Paik, Taejong; Hong, Sung-Hoon; Murray, Christopher B; Kagan, Cherie R

    2013-03-26

    We investigate the effects of stoichiometric imbalance on the electronic properties of lead chalcogenide nanocrystal films by introducing excess lead (Pb) or selenium (Se) through thermal evaporation. Hall-effect and capacitance-voltage measurements show that the carrier type, concentration, and Fermi level in nanocrystal solids may be precisely controlled through their stoichiometry. By manipulating only the stoichiometry of the nanocrystal solids, we engineer the characteristics of electronic and optoelectronic devices. Lead chalcogenide nanocrystal field-effect transistors (FETs) are fabricated at room temperature to form ambipolar, unipolar n-type, and unipolar p-type semiconducting channels as-prepared and with excess Pb and Se, respectively. Introducing excess Pb forms nanocrystal FETs with electron mobilities of 10 cm(2)/(V s), which is an order of magnitude higher than previously reported in lead chalcogenide nanocrystal devices. Adding excess Se to semiconductor nanocrystal solids in PbSe Schottky solar cells enhances the power conversion efficiency.

  16. Nanoscale thermal transport: Theoretical method and application

    NASA Astrophysics Data System (ADS)

    Zeng, Yu-Jia; Liu, Yue-Yang; Zhou, Wu-Xing; Chen, Ke-Qiu

    2018-03-01

    With the size reduction of nanoscale electronic devices, the heat generated by the unit area in integrated circuits will be increasing exponentially, and consequently the thermal management in these devices is a very important issue. In addition, the heat generated by the electronic devices mostly diffuses to the air in the form of waste heat, which makes the thermoelectric energy conversion also an important issue for nowadays. In recent years, the thermal transport properties in nanoscale systems have attracted increasing attention in both experiments and theoretical calculations. In this review, we will discuss various theoretical simulation methods for investigating thermal transport properties and take a glance at several interesting thermal transport phenomena in nanoscale systems. Our emphasizes will lie on the advantage and limitation of calculational method, and the application of nanoscale thermal transport and thermoelectric property. Project supported by the Nation Key Research and Development Program of China (Grant No. 2017YFB0701602) and the National Natural Science Foundation of China (Grant No. 11674092).

  17. Quasi-one dimensional (Q1D) nanostructures: Synthesis, integration and device application

    NASA Astrophysics Data System (ADS)

    Chien, Chung-Jen

    Quasi-one-dimensional (Q1D) nanostructures such as nanotubes and nanowires have been widely regarded as the potential building blocks for nanoscale electronic, optoelectronic and sensing devices. In this work, the content can be divided into three categories: Nano-material synthesis and characterizations, alignment and integration, physical properties and application. The dissertation consists of seven chapters as following. Chapter 1 will give an introduction to low dimensional nano-materials. Chapter 2 explains the mechanism how Q1D nanostructure grows. Chapter 3 describes the methods how we horizontally and vertically align the Q1D nanostructure. Chapter 4 and 5 are the electrical and optical device characterization respectively. Chapter 6 demonstrates the integration of Q1D nanostructures and the device application. The last chapter will discuss the future work and conclusion of the thesis.

  18. Advances in graphene-based optoelectronics, plasmonics and photonics

    NASA Astrophysics Data System (ADS)

    Nguyen, Bich Ha; Hieu Nguyen, Van

    2016-03-01

    Since the early works on graphene it has been remarked that graphene is a marvelous electronic material. Soon after its discovery, graphene was efficiently utilized in the fabrication of optoelectronic, plasmonic and photonic devices, including graphene-based Schottky junction solar cells. The present work is a review of the progress in the experimental research on graphene-based optoelectronics, plasmonics and photonics, with the emphasis on recent advances. The main graphene-based optoelectronic devices presented in this review are photodetectors and modulators. In the area of graphene-based plasmonics, a review of the plasmonic nanostructures enhancing or tuning graphene-light interaction, as well as of graphene plasmons is presented. In the area of graphene-based photonics, we report progress on fabrication of different types of graphene quantum dots as well as functionalized graphene and graphene oxide, the research on the photoluminescence and fluorescence of graphene nanostructures as well as on the energy exchange between graphene and semiconductor quantum dots. In particular, the promising achievements of research on graphene-based Schottky junction solar cells is presented.

  19. Tunable nano-scale graphene-based devices in mid-infrared wavelengths composed of cylindrical resonators

    NASA Astrophysics Data System (ADS)

    Asgari, Somayyeh; Ghattan Kashani, Zahra; Granpayeh, Nosrat

    2018-04-01

    The performances of three optical devices including a refractive index sensor, a power splitter, and a 4-channel multi/demultiplexer based on graphene cylindrical resonators are proposed, analyzed, and simulated numerically by using the finite-difference time-domain method. The proposed sensor operates on the principle of the shift in resonance wavelength with a change in the refractive index of dielectric materials. The sensor sensitivity has been numerically derived. In addition, the performances of the power splitter and the multi/demultiplexer based on the variation of the resonance wavelengths of cylindrical resonator have been thoroughly investigated. The simulation results are in good agreement with the theoretical ones. Our studies demonstrate that the graphene based ultra-compact, nano-scale devices can be improved to be used as photonic integrated devices, optical switching, and logic gates.

  20. Organic photosensitive devices

    DOEpatents

    Rand, Barry P; Forrest, Stephen R

    2013-11-26

    The present invention generally relates to organic photosensitive optoelectronic devices. More specifically, it is directed to organic photosensitive optoelectronic devices having a photoactive organic region containing encapsulated nanoparticles that exhibit plasmon resonances. An enhancement of the incident optical field is achieved via surface plasmon polariton resonances. This enhancement increases the absorption of incident light, leading to a more efficient device.

  1. Optoelectronic Integrated Circuits For Neural Networks

    NASA Technical Reports Server (NTRS)

    Psaltis, D.; Katz, J.; Kim, Jae-Hoon; Lin, S. H.; Nouhi, A.

    1990-01-01

    Many threshold devices placed on single substrate. Integrated circuits containing optoelectronic threshold elements developed for use as planar arrays of artificial neurons in research on neural-network computers. Mounted with volume holograms recorded in photorefractive crystals serving as dense arrays of variable interconnections between neurons.

  2. Characterizing the local optoelectronic performance of organic solar cells with scanning-probe microscopy

    NASA Astrophysics Data System (ADS)

    Coffey, David C.

    2007-12-01

    Conjugated polymers, small molecules, and colloidal semiconductor nanocrystals are promising materials for use in low-cost, thin-film solar cells. The photovoltaic performance of these materials, however, is highly dependent on film structure, and directly correlating local film structures with device performance remains challenging. This dissertation describes several techniques we have developed to probe and control the local optoelectronic properties of organic semiconducting films. First, with an aim of rapidly fabricating photovoltaic films with varying morphology, we demonstrate that Dip-Pen Nanolithography (DPN) can be used to control nanoscale phase separation with sub-150 nm lateral resolution in polymer films that are 20--80 nm thick. This control is based on writing monolayer chemical templates that nucleate phase separation, and we use this technique to study heterogeneous nucleation in thin films. Second, we use time-resolved electrostatic force microscopy (trEFM) to measure photoexcited charge in polymer films with a resolution of 100 nm and 100 mus. We show that such data can predict the external quantum efficiencies of polymer photodiodes, and can thus link device performance with local optoelectronic properties. When applied to the study of blended polyfluorene films, we show that domain centers can buildup charge faster then domain interfaces, which indicates that polymer/polymer blend devices should be modeled as having impure donor/acceptor domains. Third, we use photoconductive atomic force microscopy (pcAFM) to map local photocurrents with 20 nm-resolution in polymer/fullerene solar cells- achieving an order of magnitude better resolution than previous techniques. We present photocurrent maps under short-circuit conditions (zero applied bias), as well as under various applied voltages. We find significant variations in the short-circuit current between regions that appear identical in AFM topography. These variations occur from one domain to

  3. Micro- and nanoscale devices for the investigation of epigenetics and chromatin dynamics

    NASA Astrophysics Data System (ADS)

    Aguilar, Carlos A.; Craighead, Harold G.

    2013-10-01

    Deoxyribonucleic acid (DNA) is the blueprint on which life is based and transmitted, but the way in which chromatin -- a dynamic complex of nucleic acids and proteins -- is packaged and behaves in the cellular nucleus has only begun to be investigated. Epigenetic modifications sit 'on top of' the genome and affect how DNA is compacted into chromatin and transcribed into ribonucleic acid (RNA). The packaging and modifications around the genome have been shown to exert significant influence on cellular behaviour and, in turn, human development and disease. However, conventional techniques for studying epigenetic or conformational modifications of chromosomes have inherent limitations and, therefore, new methods based on micro- and nanoscale devices have been sought. Here, we review the development of these devices and explore their use in the study of DNA modifications, chromatin modifications and higher-order chromatin structures.

  4. Enhancing electronic and optoelectronic performances of tungsten diselenide by plasma treatment.

    PubMed

    Xie, Yuan; Wu, Enxiu; Hu, Ruixue; Qian, Shuangbei; Feng, Zhihong; Chen, Xuejiao; Zhang, Hao; Xu, Linyan; Hu, Xiaodong; Liu, Jing; Zhang, Daihua

    2018-06-21

    Transition metal dichalcogenides (TMDCs) have recently become spotlighted as nanomaterials for future electronic and optoelectronic devices. In this work, we develop an effective approach to enhance the electronic and optoelectronic performances of WSe2-based devices by N2O plasma treatment. The hole mobility and sheet density increase by 2 and 5 orders of magnitude, reaching 110 cm2 V-1 s-1 and 2.2 × 1012 cm-2, respectively, after the treatment. At the same time, the contact resistance (Rc) between WSe2 and its metal electrode drop by 5 orders of magnitude from 1.0 GΩ μm to 28.4 kΩ μm. The WSe2 photoconductor exhibits superior performance with high responsivity (1.5 × 105 A W-1), short response time (<2 ms), high detectivity (3.6 × 1013 Jones) and very large photoconductive gain (>106). We have also built a lateral p-n junction on a single piece of WSe2 flake by selective plasma exposure. The junction reaches an exceedingly high rectifying ratio of 106, an excellent photoresponsivity of 2.49 A W-1 and a fast response of 8 ms. The enhanced optoelectronic performance is attributed to band-engineering through the N2O plasma treatment, which can potentially serve as an effective and versatile approach for device engineering and optimization in a wide range of electronic and optoelectronic devices based on 2D materials.

  5. Fused thiophene-based conjugated polymers and their use in optoelectronic devices

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Facchetti, Antonio; Marks, Tobin J.; Takai, Atsuro

    The present teachings relate to polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds generally include as repeating units at least one annulated thienyl-vinylene-thienyl (TVT) unit and at least one other pi-conjugated unit. The annulated TVT unit can be represented by the formula: ##STR00001## where Cy.sup.1 and Cy.sup.2 can be a five- or six-membered carbocyclic ring. The annulated TVT unit can be optionally substituted at any available ring atom(s), and can be covalently linked tomore » the other pi-conjugated unit via either the thiophene rings or the carbocyclic rings Cy.sup.1 and Cy.sup.2. The other pi-conjugated unit can be a conjugated linear linker including one or more unsaturated bonds, or a conjugated cyclic linker including one or more carbocyclic and/or heterocyclic rings.« less

  6. Enhancement of photocurrent extraction and electron injection in dual-functional CH3NH3PbBr3 perovskite-based optoelectronic devices via interfacial engineering

    NASA Astrophysics Data System (ADS)

    Tsai, Chia-Lung; Lu, Yi-Chen; Hsiung Chang, Sheng

    2018-07-01

    Photocurrent extraction and electron injection in CH3NH3PbBr3 (MAPbBr3) perovskite-based optoelectronic devices are both significantly increased by improving the contact at the PCBM/MAPbBr3 interface with an extended solvent annealing (ESA) process. Photoluminescence quenching and x-ray diffraction experiments show that the ESA not only improves the contact at the PCBM/MAPbBr3 interface but also increases the crystallinity of the MAPbBr3 thin films. The optimized dual-functional PCBM-MAPbBr3 heterojunction based optoelectronic device has a high power conversion efficiency of 4.08% and a bright visible luminescence of 1509 cd m‑2. In addition, the modulation speed of the MAPbBr3 based light-emitting diodes is larger than 14 MHz, which indicates that the defect density in the MAPbBr3 thin film can be effectively reduced by using the ESA process.

  7. Enhancement of photocurrent extraction and electron injection in dual-functional CH3NH3PbBr3 perovskite-based optoelectronic devices via interfacial engineering.

    PubMed

    Tsai, Chia-Lung; Lu, Yi-Chen; Chang, Sheng Hsiung

    2018-07-06

    Photocurrent extraction and electron injection in CH 3 NH 3 PbBr 3 (MAPbBr 3 ) perovskite-based optoelectronic devices are both significantly increased by improving the contact at the PCBM/MAPbBr 3 interface with an extended solvent annealing (ESA) process. Photoluminescence quenching and x-ray diffraction experiments show that the ESA not only improves the contact at the PCBM/MAPbBr 3 interface but also increases the crystallinity of the MAPbBr 3 thin films. The optimized dual-functional PCBM-MAPbBr 3 heterojunction based optoelectronic device has a high power conversion efficiency of 4.08% and a bright visible luminescence of 1509 cd m -2 . In addition, the modulation speed of the MAPbBr 3 based light-emitting diodes is larger than 14 MHz, which indicates that the defect density in the MAPbBr 3 thin film can be effectively reduced by using the ESA process.

  8. PREFACE: Nanoscale Devices and System Integration Conference (NDSI-2004)

    NASA Astrophysics Data System (ADS)

    Khizroev, Sakhrat; Litvinov, Dmitri

    2004-10-01

    The inaugural conference on Nanoscale Devices and System Integration (NDSI-2004) was held in Miami, Florida, 15-19 February, 2004. The focus of the conference was `real-life' devices and systems that have recently emerged as a result of various nanotechnology initiatives in chemistry and chemical engineering, physics, electrical engineering, materials science and engineering, biomedical engineering, computer science, robotics, and environmental science. The conference had a single session all-invited speaker format, with the presenters making the `Who's Who in Nanotechnology' list. Contributed work was showcased at a special poster session. The conference, sponsored by the Institute of Electrical and Electronics Engineers (IEEE) and the US Air Force, and endorsed by Materials Research Society (MRS), drew more than 160 participants from fourteen countries. To strengthen the connection between fundamental research and `real-life' applications, the conference featured a large number of presenters from both academia and industry. Among the participating companies were NEC, IBM, Toshiba, AMD, Samsung, Seagate, and Veeco. Nanotechnology has triggered a new wave of research collaborations between researchers from academia and industry with a broad range of specializations. Such a global approach has resulted in a number of breakthrough accomplishments. One of the main goals of this conference was to identify these accomplishments and put the novel technology initiatives and the emerging research teams on the map. Among the key nanotechnology applications demonstrated at NDSI-2004 were carbon-nanotube-based transistors, quantum computing systems, nanophotonic devices, single-molecule electronic devices and biological magnetic sources. Due to the unprecedented success of the conference, the organizing committee of NDSI has unanimously chosen to turn NDSI into an annual international nanotechnology event. The next NDSI is scheduled for 4-6 April, 2005, in Houston, Texas

  9. Achieving high performance polymer optoelectronic devices for high efficiency, long lifetime and low fabrication cost

    NASA Astrophysics Data System (ADS)

    Huang, Jinsong

    This thesis described three types of organic optoelectronic devices: polymer light emitting diodes (PLED), polymer photovoltaic solar cell, and organic photo detector. The research in this work focuses improving their performance including device efficiency, operation lifetime simplifying fabrication process. With further understanding in PLED device physics, we come up new device operation model and improved device architecture design. This new method is closely related to understanding of the science and physics at organic/metal oxide and metal oxide/metal interface. In our new device design, both material and interface are considered in order to confine and balance all injected carriers, which has been demonstrated very be successful in increasing device efficiency. We created two world records in device efficiency: 18 lm/W for white emission fluorescence PLED, 22 lm/W for red emission phosphorescence PLED. Slow solvent drying process has been demonstrated to significantly increase device efficiency in poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C 61-butyric acid methyl ester (PCBM) mixture polymer solar cell. From the mobility study by time of flight, the increase of efficiency can be well correlated to the improved carrier transport property due to P3HT crystallization during slow solvent drying. And it is found that, similar to PLED, balanced carrier mobility is essential in high efficient polymer solar cell. There is also a revolution in our device fabrication method. A unique device fabrication method is presented by an electronic glue based lamination process combined with interface modification as a one-step polymer solar cell fabrication process. It can completely skip the thermal evaporation process, and benefit device lifetime by several merits: no air reactive. The device obtained is metal free, semi-transparent, flexible, self-encapsulated, and comparable efficiency with that by regular method. We found the photomultiplication (PM) phenomenon in C

  10. Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

    NASA Astrophysics Data System (ADS)

    Cheng, Chuantong; Huang, Beiju; Mao, Xurui; Zhang, Zanyun; Zhang, Zan; Geng, Zhaoxin; Xue, Ping; Chen, Hongda

    2017-07-01

    Optical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

  11. Temperature dependence of the properties of DBR mirrors used in surface normal optoelectronic devices

    NASA Technical Reports Server (NTRS)

    Dudley, J. J.; Crawford, D. L.; Bowers, J. E.

    1992-01-01

    The variation in the center wavelength of distributed Bragg reflectors used in optoelectronic devices, such as surface emitting lasers and Fabry-Perot modulators, is measured as the temperature of the mirrors changes over the range 25 C to 105 C. An analytic expression for the shift in center wavelength with temperature is presented. The mirrors measured are made of InP/InGaAsP, GaAs/AlAs, and Si/SiN(x). The linear shifts in center wavelength are 0.110 +/- 0.003 nm/C, 0.087 +/- 0.003 nm/C, and 0.067 +/- 0.007 nm/C for the InP/InGaAsP, GaAs/AlAs, and Si/SiN mirrors, respectively. Based on these data, the change in penetration depth with temperature is calculated.

  12. Inverted organic photosensitive devices

    DOEpatents

    Forrest, Stephen R.; Bailey-Salzman, Rhonda F.

    2016-12-06

    The present disclosure relates to organic photosensitive optoelectronic devices grown in an inverted manner. An inverted organic photosensitive optoelectronic device of the present disclosure comprises a reflective electrode, an organic donor-acceptor heterojunction over the reflective electrode, and a transparent electrode on top of the donor-acceptor heterojunction.

  13. Surface engineered two-dimensional and quasi-one-dimensional nanomaterials for electronic and optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Du, Xiang

    As the sizes of individual components in electronic and optoelectronic devices approach nano scale, the performance of the devices is often determined by surface properties due to their large surface-to-volume ratio. Surface phenomena have become one of the cornerstones in nanoelectronic industry. For this reason, research on the surface functionalization has been tremendous amount of growth over the past decades, and promises to be an increasingly important field in the future. Surface functionalization, as an effective technique to modify the surface properties of a material through a physical or chemical approach, exhibits great potential to solve the problems and challenges, and modulate the performance of nanomaterials based functional devices. Surface functionalization drives the developments and applications of modern electronic and optoelectronic devices fabricated by nanomaterials. In this thesis, I demonstrate two surface functionalization approaches, namely, surface transfer doping and H2 annealing, to effectively solve the problems and significantly enhance the performance of 2D (single structure black phosphorus (BP) and heterostructure graphene/Si Schottky junction), and quasi-1D (molybdenum trioxide (MoO 3) nanobelt) nanomaterials based functional devices, respectively. In situ photoelectron spectroscopy (PES) measurements were also carried out to explore the interfacial charge transfer occurring at the interface between the nanostructures and doping layers, and the gap states in MoO 3 thin films, which provides the underlying mechanism to understand and support our device measurement results. In the first part of this thesis, I will discuss the first surface functionalization approach, namely, surface transfer doping, to effectively modulate the ambipolar characteristics of 2D few-layer BP flakes based FETs. The ambipolar characteristics of BP transistors were effectively modulated through in situ surface functionalization with cesium carbonate (Cs2

  14. Optoelectronic sensor device for monitoring ethanol concentration in winemaking applications

    NASA Astrophysics Data System (ADS)

    Jiménez-Márquez, F.; Vázquez, J.; Úbeda, J.; Rodríguez-Rey, J.; Sánchez-Rojas, J. L.

    2015-05-01

    The supervision of key variables such as sugar, alcohol, released CO2 and microbiological evolution in fermenting grape must is of great importance in the winemaking industry. However, the fermentation kinetics is assessed by monitoring the evolution of the density as it varies during a fermentation, since density is an indicator of the total amount of sugars, ethanol and glycerol. Even so, supervising the fermentation process is an awkward and non-comprehensive task, especially in wine cellars where production rates are massive, and enologists usually measure the density of the extracted samples from each fermentation tank manually twice a day. This work aims at the design of a fast, low-cost, portable and reliable optoelectronic sensor for measuring ethanol concentration in fermenting grape must samples. Different sets of model solutions, which contain ethanol, fructose, glucose, glycerol dissolved in water and emulate the grape must composition at different stages of the fermentation, were prepared both for calibration and validation. The absorption characteristics of these model solutions were analyzed by a commercial spectrophotometer in the NIR region, in order to identify key wavelengths from which valuable information regarding the sample composition can be extracted. Finally, a customized optoelectronic prototype based on absorbance measurements at two wavelengths belonging to the NIR region was designed, fabricated and successfully tested. The system, whose optoelectronics is reduced after a thorough analysis to only two LED lamps and their corresponding paired photodiodes operating at 1.2 and 1.3 μm respectively, calculates the ethanol content by a multiple linear regression.

  15. Correlating Microstructure and Optoelectronic Performance of Carbon-Based Nanomaterials

    NASA Astrophysics Data System (ADS)

    Rochford, Caitlin

    There is a great deal of interest in carbon nanostructures such as graphene and various forms of carbon nanotubes due to their exceptional physical, electronic, and optical properties. Many technological applications have been proposed for these nanostructures, but despite the promise many carbon nanostructure-based optoelectronic devices fail to compete with their conventional counterparts. This is often due in large part to a non-optimized material or device microstructure. Factors such as crystallinity, contact quality, defect structure, and device configuration can critically affect device performance due to the high sensitivity and extreme surface to volume ratio of carbon nanostructures. In order for the exceptional intrinsic properties of the nanostructures to be exploited, a clear understanding of the microstructure and its correlation with device-relevant optoelectronic properties is needed. This dissertation presents four projects which demonstrate this principle. First, a TiO 2-coated carbon nanofiber is studied in order to optimize its structure for use in a novel dye-sensitized solar cell. Second, the electrode configuration of an individual multiwall carbon nanotube infrared sensor is investigated in order to surpass the limitations of disordered nanotube film-based infrared sensors. Third, the properties of defect structures in large area transferred graphene films grown by chemical vapor deposition are correlated with carrier diffusion in order to understand the film's low mobility compared to exfoliated graphene. Fourth, the effect of deposition conditions on graphene-metal contact was studied with the goal of achieving sufficiently transparent contacts for investigation of the superconducting proximity effect. All four projects highlight the unique properties of carbon nanostructures as well as the need to correlate their optoelectronic properties with microstructural details in order to achieve the desired device performance.

  16. Temperature-Dependent Electric Field Poling Effects in CH3NH3PbI3 Optoelectronic Devices.

    PubMed

    Zhang, Chuang; Sun, Dali; Liu, Xiaojie; Sheng, Chuan-Xiang; Vardeny, Zeev Valy

    2017-04-06

    Organo-lead halide perovskites show excellent optoelectronic properties; however, the unexpected inconsistency in forward-backward I-V characteristics remains a problem for fabricating solar panels. Here we have investigated the reasons behind this "hysteresis" by following the changes in photocurrent and photoluminescence under electric field poling in transverse CH 3 NH 3 PbI 3 -based devices from 300 to 10 K. We found that the hysteresis disappears at cryogenic temperatures, indicating the "freeze-out" of the ionic diffusion contribution. When the same device is cooled under continuous poling, the built-in electric field from ion accumulation brings significant photovoltaic effect even at 10 K. From the change of photoluminescence upon polling, we found a second dipole-related mechanism which enhances radiative recombination upon the alignment of the organic cations. The ionic origin of hysteresis was also verified by applying a magnetic field to affect the ion diffusion. These findings reveal the coexistence of ionic and dipole-related mechanisms for the hysteresis in hybrid perovskites.

  17. 1.31-1.55-µm Hybrid integrated optoelectronic receiver using low-loss quasi-monolithic integration technology

    NASA Astrophysics Data System (ADS)

    Luo, Yang; Huang, Yongqing; Ren, Xiaomin; Duan, Xiaofeng; Wang, Qi

    2014-01-01

    In order to integrate photonic devices with electronic devices to realize the low-loss hybrid integrated devices. A wide spectral hybrid integrated optoelectronic receiver was fabricated by using quasi-monolithic integration technology (QMIT) in this paper. It consisted of a 8.5 GHz InGaAs photodetector and a 1.25 Gbps mature transimpedance pre-amplifier (TIA) complementrary metal oxide semiconductor (CMOS) chip. The Au layer was deposited on a designed Si platform to form planar waveguide electrode which replaced a part of bonding wire, so it reduced the parasitic parameters of the optoelectronic receiver, and then enhanced high-speed response characteristics and the stability of the hybrid integrated receiver. Finally, a 3 Gbps clear open eye diagram of the hybrid integrated optoelectronic receiver was obtained.

  18. Fluorene-based macromolecular nanostructures and nanomaterials for organic (opto)electronics.

    PubMed

    Xie, Ling-Hai; Yang, Su-Hui; Lin, Jin-Yi; Yi, Ming-Dong; Huang, Wei

    2013-10-13

    Nanotechnology not only opens up the realm of nanoelectronics and nanophotonics, but also upgrades organic thin-film electronics and optoelectronics. In this review, we introduce polymer semiconductors and plastic electronics briefly, followed by various top-down and bottom-up nano approaches to organic electronics. Subsequently, we highlight the progress in polyfluorene-based nanoparticles and nanowires (nanofibres), their tunable optoelectronic properties as well as their applications in polymer light-emitting devices, solar cells, field-effect transistors, photodetectors, lasers, optical waveguides and others. Finally, an outlook is given with regard to four-element complex devices via organic nanotechnology and molecular manufacturing that will spread to areas such as organic mechatronics in the framework of robotic-directed science and technology.

  19. Identifying the Assembly Configuration and Fluorescence Spectra of Nanoscale Zinc-Tetraphenylporphyrin Aggregates with Scanning Tunneling Microscopy

    PubMed Central

    Zhang, Xiao-Lei; Jiang, Jian-Wei; Liu, Yi-Ting; Lou, Shi-Tao; Gao, Chun-Lei; Jin, Qing-Yuan

    2016-01-01

    ZnTPP (Zinc-Tetraphenylporphyrin) is one of the most common nanostructured materials, having high stability and excellent optoelectronic properties. In this paper, the fluorescence features of self-assembled ZnTPP monomers and aggregates on Au(111) surface are investigated in detail on the nanometer scale with scanning tunneling microscopy (STM). The formation of ZnTPP dimers is found in thick layers of a layer-by-layer molecular assembly on Au substrate with its specific molecular arrangement well characterized. Tip-induced luminescence shows a red shift from tilted dimers comparing with the behavior from monomers, which can be attributed to the change of vibrational states due to the intermolecular interaction and the increasing dielectric effect. The nanoscale configuration dependence of electroluminescence is demonstrated to provide a powerful tool aiding the design of functional molecular photoelectric devices. PMID:26948654

  20. Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Rotella, H.; Mazel, Y.; Brochen, S.; Valla, A.; Pautrat, A.; Licitra, C.; Rochat, N.; Sabbione, C.; Rodriguez, G.; Nolot, E.

    2017-12-01

    We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 mΩ \\cdotcm and 3.73 eV) and consistent with the industrial device requirements.

  1. New possibility on InZnO nano thin film for green emissive optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Sugumaran, Sathish; Noor Bin Ahmad, Mohd; Faizal Jamlos, Mohd; Bellan, Chandar Shekar; Chandran, Sharmila; Sivaraj, Manoj

    2016-04-01

    Indium zinc oxide (InZnO) nano thin film was prepared from InZnO nanoparticles (NPs) by thermal evaporation technique. Fourier transform infrared spectroscopy showed the presence of metal-oxide bond. X-ray diffraction pattern revealed the mixed phase structure. The presence of elements In, Zn and O were identified from energy dispersive X-ray analysis. Size of the NPs was found to be 171 and 263 nm by transmission electron microscopy. Scanning electron microscopy image showed the spherical shape uniform morphology with uniform distribution grains. Photoluminescence spectrum exhibited a broad green emission for InZnO nano thin film. The acquired results of structure, smooth morphology and photoluminescence property suggested that the InZnO nano thin film to be a promising material for room temperature green emissive optoelectronic, laser diodes, solar cells and other optical devices.

  2. Absorption and Emission of Light in Optoelectronic Nanomaterials: The Role of the Local Optical Environment.

    PubMed

    Jiménez-Solano, Alberto; Galisteo-López, Juan F; Míguez, Hernán

    2018-04-19

    Tailoring the interaction of electromagnetic radiation with matter is central to the development of optoelectronic devices. This becomes particularly relevant for a new generation of devices offering the possibility of solution processing with competitive efficiencies as well as new functionalities. These devices, containing novel materials such as inorganic colloidal quantum dots or hybrid organic-inorganic lead halide perovskites, commonly demand thin (tens of nanometers) active layers in order to perform optimally and thus maximizing the way electromagnetic radiation interacts with these layers is essential. In this Perspective, we discuss the relevance of tailoring the optical environment of the active layer in an optoelectronic device and illustrate it with two real-world systems comprising photovoltaic cells and light emitting devices.

  3. Development of aluminum gallium nitride based optoelectronic devices operating in deep UV and terahertz spectrum ranges

    NASA Astrophysics Data System (ADS)

    Zhang, Wei

    In this research project I have investigated AlGaN alloys and their quantum structures for applications in deep UV and terahertz optoelectronic devices. For the deep UV emitter applications the materials and devices were grown by rf plasma-assisted molecular beam epitaxy on 4H-SiC, 6H-SiC and c-plane sapphire substrates. In the growth of AlGaN/AlN multiple quantum wells on SiC substrates, the AlGaN wells were grown under excess Ga, far beyond than what is required for the growth of stoichiometric AlGaN films, which resulted in liquid phase epitaxy growth mode. Due to the statistical variations of the excess Ga on the growth front we found that this growth mode leads to films with lateral variations in the composition and thus, band structure potential fluctuations. Transmission electron microscopy shows that the wells in such structures are not homogeneous but have the appearance of quantum dots. We find by temperature dependent photoluminescence measurements that the multiple quantum wells with band structure potential fluctuations emit at 240 nm and have room temperature internal quantum efficiency as high as 68%. Furthermore, they were found to have a maximum net modal optical gain of 118 cm-1 at a transparency threshold corresponding to 1.4 x 1017 cm-3 excited carriers. We attribute this low transparency threshold to population inversion of only the regions of the potential fluctuations rather than of the entire matrix. Some prototype deep UV emitting LED structures were also grown by the same method on sapphire substrates. Optoelectronic devices for terahertz light emission and detection, based on intersubband transitions in III-nitride semiconductor quantum wells, were grown on single crystal c-plane GaN substrates. Growth conditions such the ratio of group III to active nitrogen fluxes, which determines the appropriate Ga-coverage for atomically smooth growth without requiring growth interruptions were employed. Emitters designed in the quantum cascade

  4. Optoelectronic devices toward monolithic integration

    NASA Astrophysics Data System (ADS)

    Ghergia, V.

    1992-12-01

    Starting from the present state of tl art of discrete devices up to the on going realization of monolithic semicorxtuctor integrated prototypes an overview ofoptoelectronic devices for telecom applications is given inchiding a short classification of the different kind of integrated devices. On the future perspective of IBCN distribution network some economica of hybrid and monolithic forms of integration are attempted. lnaflyashoitpresentationoftheactivitiesperformedintbefieldofmonolithic integration by EEC ESPR1T and RACE projects is reported. 1.

  5. High bandgap III-V alloys for high efficiency optoelectronics

    DOEpatents

    Alberi, Kirstin; Mascarenhas, Angelo; Wanlass, Mark

    2017-01-10

    High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

  6. Significant performance enhancement in photoconductive terahertz optoelectronics by incorporating plasmonic contact electrodes.

    PubMed

    Berry, C W; Wang, N; Hashemi, M R; Unlu, M; Jarrahi, M

    2013-01-01

    Even though the terahertz spectrum is well suited for chemical identification, material characterization, biological sensing and medical imaging, practical development of these applications has been hindered by attributes of existing terahertz optoelectronics. Here we demonstrate that the use of plasmonic contact electrodes can significantly mitigate the low-quantum efficiency performance of photoconductive terahertz optoelectronics. The use of plasmonic contact electrodes offers nanoscale carrier transport path lengths for the majority of photocarriers, increasing the number of collected photocarriers in a subpicosecond timescale and, thus, enhancing the optical-to-terahertz conversion efficiency of photoconductive terahertz emitters and the detection sensitivity of photoconductive terahertz detectors. We experimentally demonstrate 50 times higher terahertz radiation powers from a plasmonic photoconductive emitter in comparison with a similar photoconductive emitter with non-plasmonic contact electrodes, as well as 30 times higher terahertz detection sensitivities from a plasmonic photoconductive detector in comparison with a similar photoconductive detector with non-plasmonic contact electrodes.

  7. Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

    NASA Astrophysics Data System (ADS)

    Busche, Christoph; Vilà-Nadal, Laia; Yan, Jun; Miras, Haralampos N.; Long, De-Liang; Georgiev, Vihar P.; Asenov, Asen; Pedersen, Rasmus H.; Gadegaard, Nikolaj; Mirza, Muhammad M.; Paul, Douglas J.; Poblet, Josep M.; Cronin, Leroy

    2014-11-01

    Flash memory devices--that is, non-volatile computer storage media that can be electrically erased and reprogrammed--are vital for portable electronics, but the scaling down of metal-oxide-semiconductor (MOS) flash memory to sizes of below ten nanometres per data cell presents challenges. Molecules have been proposed to replace MOS flash memory, but they suffer from low electrical conductivity, high resistance, low device yield, and finite thermal stability, limiting their integration into current MOS technologies. Although great advances have been made in the pursuit of molecule-based flash memory, there are a number of significant barriers to the realization of devices using conventional MOS technologies. Here we show that core-shell polyoxometalate (POM) molecules can act as candidate storage nodes for MOS flash memory. Realistic, industry-standard device simulations validate our approach at the nanometre scale, where the device performance is determined mainly by the number of molecules in the storage media and not by their position. To exploit the nature of the core-shell POM clusters, we show, at both the molecular and device level, that embedding [(Se(IV)O3)2]4- as an oxidizable dopant in the cluster core allows the oxidation of the molecule to a [Se(V)2O6]2- moiety containing a {Se(V)-Se(V)} bond (where curly brackets indicate a moiety, not a molecule) and reveals a new 5+ oxidation state for selenium. This new oxidation state can be observed at the device level, resulting in a new type of memory, which we call `write-once-erase'. Taken together, these results show that POMs have the potential to be used as a realistic nanoscale flash memory. Also, the configuration of the doped POM core may lead to new types of electrical behaviour. This work suggests a route to the practical integration of configurable molecules in MOS technologies as the lithographic scales approach the molecular limit.

  8. Influence of Molecular Conformations and Microstructure on the Optoelectronic Properties of Conjugated Polymers

    PubMed Central

    Botiz, Ioan; Stingelin, Natalie

    2014-01-01

    It is increasingly obvious that the molecular conformations and the long-range arrangement that conjugated polymers can adopt under various experimental conditions in bulk, solutions or thin films, significantly impact their resulting optoelectronic properties. As a consequence, the functionalities and efficiencies of resulting organic devices, such as field-effect transistors, light-emitting diodes, or photovoltaic cells, also dramatically change due to the close structure/property relationship. A range of structure/optoelectronic properties relationships have been investigated over the last few years using various experimental and theoretical methods, and, further, interesting correlations are continuously revealed by the scientific community. In this review, we discuss the latest findings related to the structure/optoelectronic properties interrelationships that exist in organic devices fabricated with conjugated polymers in terms of charge mobility, absorption, photoluminescence, as well as photovoltaic properties. PMID:28788568

  9. Light manipulation for organic optoelectronics using bio-inspired moth's eye nanostructures.

    PubMed

    Zhou, Lei; Ou, Qing-Dong; Chen, Jing-De; Shen, Su; Tang, Jian-Xin; Li, Yan-Qing; Lee, Shuit-Tong

    2014-02-10

    Organic-based optoelectronic devices, including light-emitting diodes (OLEDs) and solar cells (OSCs) hold great promise as low-cost and large-area electro-optical devices and renewable energy sources. However, further improvement in efficiency remains a daunting challenge due to limited light extraction or absorption in conventional device architectures. Here we report a universal method of optical manipulation of light by integrating a dual-side bio-inspired moth's eye nanostructure with broadband anti-reflective and quasi-omnidirectional properties. Light out-coupling efficiency of OLEDs with stacked triple emission units is over 2 times that of a conventional device, resulting in drastic increase in external quantum efficiency and current efficiency to 119.7% and 366 cd A(-1) without introducing spectral distortion and directionality. Similarly, the light in-coupling efficiency of OSCs is increased 20%, yielding an enhanced power conversion efficiency of 9.33%. We anticipate this method would offer a convenient and scalable way for inexpensive and high-efficiency organic optoelectronic designs.

  10. Electrical Contacts in Monolayer Arsenene Devices.

    PubMed

    Wang, Yangyang; Ye, Meng; Weng, Mouyi; Li, Jingzhen; Zhang, Xiuying; Zhang, Han; Guo, Ying; Pan, Yuanyuan; Xiao, Lin; Liu, Junku; Pan, Feng; Lu, Jing

    2017-08-30

    Arsenene, arsenic analogue of graphene, as an emerging member of two-dimensional semiconductors (2DSCs), is quite promising in next-generation electronic and optoelectronic applications. The metal electrical contacts play a vital role in the charge transport and photoresponse processes of nanoscale 2DSC devices and even can mask the intrinsic properties of 2DSCs. Here, we present a first comprehensive study of the electrical contact properties of monolayer (ML) arsenene with different electrodes by using ab initio electronic calculations and quantum transport simulations. Schottky barrier is always formed with bulk metal contacts owing to the Fermi level pinning (pinning factor S = 0.33), with electron Schottky barrier height (SBH) of 0.12, 0.21, 0.25, 0.35, and 0.50 eV for Sc, Ti, Ag, Cu, and Au contacts and hole SBH of 0.75 and 0.78 eV for Pd and Pt contacts, respectively. However, by contact with 2D graphene, the Fermi level pinning effect can be reduced due to the suppression of metal-induced gap states. Remarkably, a barrier free hole injection is realized in ML arsenene device with graphene-Pt hybrid electrode, suggestive of a high device performance in such a ML arsenene device. Our study provides a theoretical foundation for the selection of favorable electrodes in future ML arsenene devices.

  11. Photonics and optoelectronics of two-dimensional materials beyond graphene.

    PubMed

    Ponraj, Joice Sophia; Xu, Zai-Quan; Dhanabalan, Sathish Chander; Mu, Haoran; Wang, Yusheng; Yuan, Jian; Li, Pengfei; Thakur, Siddharatha; Ashrafi, Mursal; Mccoubrey, Kenneth; Zhang, Yupeng; Li, Shaojuan; Zhang, Han; Bao, Qiaoliang

    2016-11-18

    Apart from conventional materials, the study of two-dimensional (2D) materials has emerged as a significant field of study for a variety of applications. Graphene-like 2D materials are important elements of potential optoelectronics applications due to their exceptional electronic and optical properties. The processing of these materials towards the realization of devices has been one of the main motivations for the recent development of photonics and optoelectronics. The recent progress in photonic devices based on graphene-like 2D materials, especially topological insulators (TIs) and transition metal dichalcogenides (TMDs) with the methodology level discussions from the viewpoint of state-of-the-art designs in device geometry and materials are detailed in this review. We have started the article with an overview of the electronic properties and continued by highlighting their linear and nonlinear optical properties. The production of TIs and TMDs by different methods is detailed. The following main applications focused towards device fabrication are elaborated: (1) photodetectors, (2) photovoltaic devices, (3) light-emitting devices, (4) flexible devices and (5) laser applications. The possibility of employing these 2D materials in different fields is also suggested based on their properties in the prospective part. This review will not only greatly complement the detailed knowledge of the device physics of these materials, but also provide contemporary perception for the researchers who wish to consider these materials for various applications by following the path of graphene.

  12. Photonics and optoelectronics of two-dimensional materials beyond graphene

    NASA Astrophysics Data System (ADS)

    Ponraj, Joice Sophia; Xu, Zai-Quan; Chander Dhanabalan, Sathish; Mu, Haoran; Wang, Yusheng; Yuan, Jian; Li, Pengfei; Thakur, Siddharatha; Ashrafi, Mursal; Mccoubrey, Kenneth; Zhang, Yupeng; Li, Shaojuan; Zhang, Han; Bao, Qiaoliang

    2016-11-01

    Apart from conventional materials, the study of two-dimensional (2D) materials has emerged as a significant field of study for a variety of applications. Graphene-like 2D materials are important elements of potential optoelectronics applications due to their exceptional electronic and optical properties. The processing of these materials towards the realization of devices has been one of the main motivations for the recent development of photonics and optoelectronics. The recent progress in photonic devices based on graphene-like 2D materials, especially topological insulators (TIs) and transition metal dichalcogenides (TMDs) with the methodology level discussions from the viewpoint of state-of-the-art designs in device geometry and materials are detailed in this review. We have started the article with an overview of the electronic properties and continued by highlighting their linear and nonlinear optical properties. The production of TIs and TMDs by different methods is detailed. The following main applications focused towards device fabrication are elaborated: (1) photodetectors, (2) photovoltaic devices, (3) light-emitting devices, (4) flexible devices and (5) laser applications. The possibility of employing these 2D materials in different fields is also suggested based on their properties in the prospective part. This review will not only greatly complement the detailed knowledge of the device physics of these materials, but also provide contemporary perception for the researchers who wish to consider these materials for various applications by following the path of graphene.

  13. Characterization of Semiconductor Nanocrystal Assemblies as Components of Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Malfavon-Ochoa, Mario

    dispersions of core and core/shell NCs will be shown to produce close packed assemblies of NCs forming near-wavelength luminescent superstructures separated in space. We show the dominant contribution of a two-monolayer thick sharp interface CdS shell to the diffraction efficiency, and necessarily the refractive index, of the NCs, independent of core size. Utilization of these gratings as in-coupling elements at various positions within a device architecture are also examined. These new observations were achieved by unprecedented control of NC architecture during dispersion processing, while maintaining high luminescence, made possible by optimized NC surface passivation. These studies enable the formation of new LED architectures, and new optoelectronic devices based on angle resolved, monochromatic fluorescence from diffraction gratings prepared from simple solution processing approaches. Further, the novel observation of angle amplified interfering fluorescence from these features is argued to be a result of long range radiative coupling and superradiance enabled by the monodispersity and high-quality NC surface passivation described herein.

  14. Inverted organic electronic and optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Small, Cephas E.

    The research and development of organic electronics for commercial application has received much attention due to the unique properties of organic semiconductors and the potential for low-cost high-throughput manufacturing. For improved large-scale processing compatibility and enhanced device stability, an inverted geometry has been employed for devices such as organic light emitting diodes and organic photovoltaic cells. These improvements are attributed to the added flexibility to incorporate more air-stable materials into the inverted device geometry. However, early work on organic electronic devices with an inverted geometry typically showed reduced device performance compared to devices with a conventional structure. In the case of organic light emitting diodes, inverted devices typically show high operating voltages due to insufficient carrier injection. Here, a method for enhancing hole injection in inverted organic electronic devices is presented. By incorporating an electron accepting interlayer into the inverted device, a substantial enhancement in hole injection efficiency was observed as compared to conventional devices. Through a detailed carrier injection study, it is determined that the injection efficiency enhancements in the inverted devices are due to enhanced charge transfer at the electron acceptor/organic semiconductor interface. A similar situation is observed for organic photovoltaic cells, in which devices with an inverted geometry show limited carrier extraction in early studies. In this work, enhanced carrier extraction is demonstrated for inverted polymer solar cells using a surface-modified ZnO-polymer composite electron-transporting layer. The insulating polymer in the composite layer inhibited aggregation of the ZnO nanoparticles, while the surface-modification of the composite interlayer improved the electronic coupling with the photoactive layer. As a result, inverted polymer solar cells with power conversion efficiencies of over 8

  15. An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices.

    PubMed

    Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

    2017-12-01

    Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag 5 In 5 Sb 60 Te 30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

  16. An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices

    NASA Astrophysics Data System (ADS)

    Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

    2017-12-01

    Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag5In5Sb60Te30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

  17. Two-dimensional crystals: managing light for optoelectronics.

    PubMed

    Eda, Goki; Maier, Stefan A

    2013-07-23

    Semiconducting two-dimensional (2D) crystals such as MoS2 and WSe2 exhibit unusual optical properties that can be exploited for novel optoelectronics ranging from flexible photovoltaic cells to harmonic generation and electro-optical modulation devices. Rapid progress of the field, particularly in the growth area, is beginning to enable ways to implement 2D crystals into devices with tailored functionalities. For practical device performance, a key challenge is to maximize light-matter interactions in the material, which is inherently weak due to its atomically thin nature. Light management around the 2D layers with the use of plasmonic nanostructures can provide a compelling solution.

  18. Light box for investigation of characteristics of optoelectronics detectors

    NASA Astrophysics Data System (ADS)

    Szreder, Agnieszka; Mazikowski, Adam

    2017-09-01

    In this paper, a light box for investigation of characteristics of optoelectronic detectors is described. The light box consists of an illumination device, an optical power sensor and a mechanical enclosure. The illumination device is based on four types of high-power light emitting diodes (LED): white light, red, green and blue. The illumination level can be varied for each LED independently by the driver and is measured by optical power sensor. The mechanical enclosure provides stable mounting points for the illumination device, sensor and the examined detector and protects the system from external light, which would otherwise strongly influence the measurement results. Uniformity of illumination distribution provided by the light box for all colors is good, making the measurement results less dependent on the position of the examined detector. The response of optoelectronic detectors can be investigated using the developed light box for each LED separately or for any combination of up to four LED types. As the red, green and blue LEDs are rather narrow bandwidth sources, spectral response of different detectors can be examined for these wavelength ranges. The described light box can be used for different applications. Its primary use is in a student laboratory setup for investigation of characteristics of optoelectronic detectors. Moreover, it can also be used in various colorimetric or photographic applications. Finally, it will be used as a part of demonstrations from the fields of vision and color, performed during science fairs and outreach activities increasing awareness of optics and photonics.

  19. Hot carrier-enhanced interlayer electron-hole pair multiplication in 2D semiconductor heterostructure photocells

    NASA Astrophysics Data System (ADS)

    Barati, Fatemeh; Grossnickle, Max; Su, Shanshan; Lake, Roger K.; Aji, Vivek; Gabor, Nathaniel M.

    2017-12-01

    Strong electronic interactions can result in novel particle-antiparticle (electron-hole, e-h) pair generation effects, which may be exploited to enhance the photoresponse of nanoscale optoelectronic devices. Highly efficient e-h pair multiplication has been demonstrated in several important nanoscale systems, including nanocrystal quantum dots, carbon nanotubes and graphene. The small Fermi velocity and nonlocal nature of the effective dielectric screening in ultrathin layers of transition-metal dichalcogenides (TMDs) indicates that e-h interactions are very strong, so high-efficiency generation of e-h pairs from hot electrons is expected. However, such e-h pair multiplication has not been observed in 2D TMD devices. Here, we report the highly efficient multiplication of interlayer e-h pairs in 2D semiconductor heterostructure photocells. Electronic transport measurements of the interlayer I-VSD characteristics indicate that layer-indirect e-h pairs are generated by hot-electron impact excitation at temperatures near T = 300 K. By exploiting this highly efficient interlayer e-h pair multiplication process, we demonstrate near-infrared optoelectronic devices that exhibit 350% enhancement of the optoelectronic responsivity at microwatt power levels. Our findings, which demonstrate efficient carrier multiplication in TMD-based optoelectronic devices, make 2D semiconductor heterostructures viable for a new class of ultra-efficient photodetectors based on layer-indirect e-h excitations.

  20. Investigational Clinical Trial of a Prototype Optoelectronic Computer-Aided Navigation Device for Dental Implant Surgery.

    PubMed

    Jokstad, Asbjørn; Winnett, Brenton; Fava, Joseph; Powell, David; Somogyi-Ganss, Eszter

    New digital technologies enable real-time computer-aided (CA) three-dimensional (3D) guidance during dental implant surgery. The aim of this investigational clinical trial was to demonstrate the safety and effectiveness of a prototype optoelectronic CA-navigation device in comparison with the conventional approach for planning and effecting dental implant surgery. Study participants with up to four missing teeth were recruited from the pool of patients referred to the University of Toronto Graduate Prosthodontics clinic. The first 10 participants were allocated to either a conventional or a prototype device study arm in a randomized trial. The next 10 participants received implants using the prototype device. All study participants were restored with fixed dental prostheses after 3 (mandible) or 6 (maxilla) months healing, and monitored over 12 months. The primary outcome was the incidence of any surgical, biologic, or prosthetic adverse events or device-related complications. Secondary outcomes were the incidence of positioning of implants not considered suitable for straightforward prosthetic restoration (yes/no); the perception of the ease of use of the prototype device by the two oral surgeons, recorded by use of a Likert-type questionnaire; and the clinical performance of the implant and superstructure after 1 year in function. Positioning of the implants was appraised on periapical radiographs and clinical photographs by four independent blinded examiners. Peri-implant bone loss was measured on periapical radiographs by a blinded examiner. No adverse events occurred related to placing any implants. Four device-related complications led to a switch from using the prototype device to the conventional method. All implants placed by use of the prototype device were in a position considered suitable for straightforward prosthetic restoration (n = 21). The qualitative evaluation by the surgeons was generally positive, although ergonomic challenges were identified

  1. Exciton confinement in organic dendrimer quantum wells for opto-electronic applications

    NASA Astrophysics Data System (ADS)

    Lupton, J. M.; Samuel, I. D. W.; Burn, P. L.; Mukamel, S.

    2002-01-01

    Organic dendrimers are a fascinating new class of materials for opto-electronic applications. We present coupled electronic oscillator calculations on novel nanoscale conjugated dendrimers for use in organic light-emitting diodes. Strong confinement of excitations at the center of the dendrimers is observed, which accounts for the dependence of intermolecular interactions and charge transport on the degree of branching of the dendrimer. The calculated absorption spectra are in excellent agreement with the measured data and show that benzene rings are shared between excitations on the linear segments of the hyperbranched molecules. The coupled electronic oscillator approach is ideally suited to treat large dendritic molecules.

  2. Optical absorption and oxygen passivation of surface states in III-nitride photonic devices

    NASA Astrophysics Data System (ADS)

    Rousseau, Ian; Callsen, Gordon; Jacopin, Gwénolé; Carlin, Jean-François; Butté, Raphaël; Grandjean, Nicolas

    2018-03-01

    III-nitride surface states are expected to impact high surface-to-volume ratio devices, such as nano- and micro-wire light-emitting diodes, transistors, and photonic integrated circuits. In this work, reversible photoinduced oxygen desorption from III-nitride microdisk resonator surfaces is shown to increase optical attenuation of whispering gallery modes by 100 cm-1 at λ = 450 nm. Comparison of photoinduced oxygen desorption in unintentionally and n+-doped microdisks suggests that the spectral changes originate from the unpinning of the surface Fermi level, likely taking place at etched nonpolar III-nitride sidewalls. An oxygen-rich surface prepared by thermal annealing results in a broadband Q improvement to state-of-the-art values exceeding 1 × 104 at 2.6 eV. Such findings emphasize the importance of optically active surface states and their passivation for future nanoscale III-nitride optoelectronic and photonic devices.

  3. Integrated optoelectronic oscillator.

    PubMed

    Tang, Jian; Hao, Tengfei; Li, Wei; Domenech, David; Baños, Rocio; Muñoz, Pascual; Zhu, Ninghua; Capmany, José; Li, Ming

    2018-04-30

    With the rapid development of the modern communication systems, radar and wireless services, microwave signal with high-frequency, high-spectral-purity and frequency tunability as well as microwave generator with light weight, compact size, power-efficient and low cost are increasingly demanded. Integrated microwave photonics (IMWP) is regarded as a prospective way to meet these demands by hybridizing the microwave circuits and the photonics circuits on chip. In this article, we propose and experimentally demonstrate an integrated optoelectronic oscillator (IOEO). All of the devices needed in the optoelectronic oscillation loop circuit are monolithically integrated on chip within size of 5×6cm 2 . By tuning the injection current to 44 mA, the output frequency of the proposed IOEO is located at 7.30 GHz with phase noise value of -91 dBc/Hz@1MHz. When the injection current is increased to 65 mA, the output frequency can be changed to 8.87 GHz with phase noise value of -92 dBc/Hz@1MHz. Both of the oscillation frequency can be slightly tuned within 20 MHz around the center oscillation frequency by tuning the injection current. The method about improving the performance of IOEO is carefully discussed at the end of in this article.

  4. Nanoscale phase change memory materials.

    PubMed

    Caldwell, Marissa A; Jeyasingh, Rakesh Gnana David; Wong, H-S Philip; Milliron, Delia J

    2012-08-07

    Phase change memory materials store information through their reversible transitions between crystalline and amorphous states. For typical metal chalcogenide compounds, their phase transition properties directly impact critical memory characteristics and the manipulation of these is a major focus in the field. Here, we discuss recent work that explores the tuning of such properties by scaling the materials to nanoscale dimensions, including fabrication and synthetic strategies used to produce nanoscale phase change memory materials. The trends that emerge are relevant to understanding how such memory technologies will function as they scale to ever smaller dimensions and also suggest new approaches to designing materials for phase change applications. Finally, the challenges and opportunities raised by integrating nanoscale phase change materials into switching devices are discussed.

  5. Friction laws at the nanoscale.

    PubMed

    Mo, Yifei; Turner, Kevin T; Szlufarska, Izabela

    2009-02-26

    Macroscopic laws of friction do not generally apply to nanoscale contacts. Although continuum mechanics models have been predicted to break down at the nanoscale, they continue to be applied for lack of a better theory. An understanding of how friction force depends on applied load and contact area at these scales is essential for the design of miniaturized devices with optimal mechanical performance. Here we use large-scale molecular dynamics simulations with realistic force fields to establish friction laws in dry nanoscale contacts. We show that friction force depends linearly on the number of atoms that chemically interact across the contact. By defining the contact area as being proportional to this number of interacting atoms, we show that the macroscopically observed linear relationship between friction force and contact area can be extended to the nanoscale. Our model predicts that as the adhesion between the contacting surfaces is reduced, a transition takes place from nonlinear to linear dependence of friction force on load. This transition is consistent with the results of several nanoscale friction experiments. We demonstrate that the breakdown of continuum mechanics can be understood as a result of the rough (multi-asperity) nature of the contact, and show that roughness theories of friction can be applied at the nanoscale.

  6. Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

    NASA Astrophysics Data System (ADS)

    Singh, Vivek; Yu, Yixuan; Sun, Qi-C.; Korgel, Brian; Nagpal, Prashant

    2014-11-01

    While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in

  7. Transparent conductors based on microscale/nanoscale materials for high performance devices

    NASA Astrophysics Data System (ADS)

    Gao, Tongchuan

    Transparent conductors are important as the top electrode for a variety of optoelectronic devices, including solar cells, light-emitting diodes (LEDs), at panel displays, and touch screens. Doped indium tin oxide (ITO) thin films are the predominant transparent conductor material. However, ITO thin films are brittle, making them unsuitable for the emerging flexible devices, and suffer from high material and processing cost. In my thesis, we developed a variety of transparent conductors toward a performance comparable with or superior to ITO thin films, with lower cost and potential for scalable manufacturing. Metal nanomesh (NM), hierarchical graphene/metal microgrid (MG), and hierarchical metal NM/MG materials were investigated. Simulation methods were used as a powerful tool to predict the transparency and sheet resistance of the transparent conductors by solving Maxwell's equations and Poisson's equation. Affordable and scalable fabrication processes were developed thereafter. Transparent conductors with over 90% transparency and less than 10 O/square sheet resistance were successfully fabricated on both rigid and flexible substrates. Durability tests, such as bending, heating and tape tests, were carried out to evaluate the robustness of the samples. Haze factor, which characterizes how blurry a transparent conductor appears, was also studied in-depth using analytical calculation and numerical simulation. We demonstrated a tunable haze factor for metal NM transparent conductors and analyzed the principle for tuning the haze factor. Plasmonic effects, excited by some transparent conductors, can lead to enhanced performance in photovoltaic devices. We systematically studied the effect of incorporating metal NM into ultrathin film silicon solar cells using numerical simulation, with the aid of optimization algorithms to reduce the optimization time. Mechanisms contributing to the enhanced performance were then identified and analyzed. Over 72% enhancement in short

  8. A microfluidic device for real-time monitoring of Bacillus subtilis bacterial spores during germination based on non-specific physicochemical interactions on the nanoscale level.

    PubMed

    Zabrocka, L; Langer, K; Michalski, A; Kocik, J; Langer, J J

    2015-01-07

    A microfluidic device for studies on the germination of bacterial spores (e.g. Bacillus subtilis) based on non-specific interactions on the nanoscale is presented. A decrease in the population of spores during germination followed by the appearance of transition forms and an increase in the number of vegetative cells can be registered directly and simultaneously by using the microfluidic device, which is equipped with a conductive polymer layer (polyaniline) in the form of a nano-network. The lab-on-a-chip-type device, operating in a continuous flow regime, allows monitoring of germination of bacterial spores and analysis of the process in detail. The procedure is fast and accurate enough for quantitative real-time monitoring of the main steps of germination, including final transformation of the spores into vegetative cells. All of this is done without the use of biomarkers or any bio-specific materials, such as enzymes, antibodies and aptamers, and is simply based on an analysis of physicochemical interactions on the nanoscale level.

  9. Common Principles of Molecular Electronics and Nanoscale Electrochemistry.

    PubMed

    Bueno, Paulo Roberto

    2018-05-24

    The merging of nanoscale electronics and electrochemistry can potentially modernize the way electronic devices are currently engineered or constructed. It is well known that the greatest challenges will involve not only miniaturizing and improving the performance of mobile devices, but also manufacturing reliable electrical vehicles, and engineering more efficient solar panels and energy storage systems. These are just a few examples of how technological innovation is dependent on both electrochemical and electronic elements. This paper offers a conceptual discussion of this central topic, with particular focus on the impact that uniting physical and chemical concepts at a nanoscale could have on the future development of electroanalytical devices. The specific example to which this article refers pertains to molecular diagnostics, i.e., devices that employ physical and electrochemical concepts to diagnose diseases.

  10. Enhancement of Light Absorption in Silicon Nanowire Photovoltaic Devices with Dielectric and Metallic Grating Structures.

    PubMed

    Park, Jin-Sung; Kim, Kyoung-Ho; Hwang, Min-Soo; Zhang, Xing; Lee, Jung Min; Kim, Jungkil; Song, Kyung-Deok; No, You-Shin; Jeong, Kwang-Yong; Cahoon, James F; Kim, Sun-Kyung; Park, Hong-Gyu

    2017-12-13

    We report the enhancement of light absorption in Si nanowire photovoltaic devices with one-dimensional dielectric or metallic gratings that are fabricated by a damage-free, precisely aligning, polymer-assisted transfer method. Incorporation of a Si 3 N 4 grating with a Si nanowire effectively enhances the photocurrents for transverse-electric polarized light. The wavelength at which a maximum photocurrent is generated is readily tuned by adjusting the grating pitch. Moreover, the electrical properties of the nanowire devices are preserved before and after transferring the Si 3 N 4 gratings onto Si nanowires, ensuring that the quality of pristine nanowires is not degraded during the transfer. Furthermore, we demonstrate Si nanowire photovoltaic devices with Ag gratings using the same transfer method. Measurements on the fabricated devices reveal approximately 27.1% enhancement in light absorption compared to that of the same devices without the Ag gratings without any degradation of electrical properties. We believe that our polymer-assisted transfer method is not limited to the fabrication of grating-incorporated nanowire photovoltaic devices but can also be generically applied for the implementation of complex nanoscale structures toward the development of multifunctional optoelectronic devices.

  11. Nanoscale hotspots due to nonequilibrium thermal transport.

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sinha, Sanjiv; Goodson, Kenneth E.

    2004-01-01

    Recent experimental and modeling efforts have been directed towards the issue of temperature localization and hotspot formation in the vicinity of nanoscale heat generating devices. The nonequilibrium transport conditions which develop around these nanoscale devices results in elevated temperatures near the heat source which can not be predicted by continuum diffusion theory. Efforts to determine the severity of this temperature localization phenomena in silicon devices near and above room temperature are of technological importance to the development of microelectronics and other nanotechnologies. In this work, we have developed a new modeling tool in order to explore the magnitude of themore » additional thermal resistance which forms around nanoscale hotspots from temperatures of 100-1000K. The models are based on a two fluid approximation in which thermal energy is transferred between ''stationary'' optical phonons and fast propagating acoustic phonon modes. The results of the model have shown excellent agreement with experimental results of localized hotspots in silicon at lower temperatures. The model predicts that the effect of added thermal resistance due to the nonequilibrium phonon distribution is greatest at lower temperatures, but is maintained out to temperatures of 1000K. The resistance predicted by the numerical code can be easily integrated with continuum models in order to predict the temperature distribution around nanoscale heat sources with improved accuracy. Additional research efforts also focused on the measurements of the thermal resistance of silicon thin films at higher temperatures, with a focus on polycrystalline silicon. This work was intended to provide much needed experimental data on the thermal transport properties for micro and nanoscale devices built with this material. Initial experiments have shown that the exposure of polycrystalline silicon to high temperatures may induce recrystallization and radically increase the thermal

  12. Method to determine thermal profiles of nanoscale circuitry

    DOEpatents

    Zettl, Alexander K; Begtrup, Gavi E

    2013-04-30

    A platform that can measure the thermal profiles of devices with nanoscale resolution has been developed. The system measures the local temperature by using an array of nanoscale thermometers. This process can be observed in real time using a high resolution imagining technique such as electron microscopy. The platform can operate at extremely high temperatures.

  13. Nanowire Optoelectronics

    NASA Astrophysics Data System (ADS)

    Wang, Zhihuan; Nabet, Bahram

    2015-12-01

    Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs), lasers, sensors, and optical antennas. We review the optical properties of these nanowires in terms of absorption, guiding, and radiation of light, which may be termed light management. Analysis of the interaction of light with long cylindrical/hexagonal structures with subwavelength diameters identifies radial resonant modes, such as Leaky Mode Resonances, or Whispering Gallery modes. The two-dimensional treatment should incorporate axial variations in "volumetric modes,"which have so far been presented in terms of Fabry-Perot (FP), and helical resonance modes. We report on finite-difference timedomain (FDTD) simulations with the aim of identifying the dependence of these modes on geometry (length, width), tapering, shape (cylindrical, hexagonal), core-shell versus core-only, and dielectric cores with semiconductor shells. This demonstrates how nanowires (NWs) form excellent optical cavities without the need for top and bottommirrors. However, optically equivalent structures such as hexagonal and cylindrical wires can have very different optoelectronic properties meaning that light management alone does not sufficiently describe the observed enhancement in upward (absorption) and downward transitions (emission) of light inNWs; rather, the electronic transition rates should be considered. We discuss this "rate management" scheme showing its strong dimensional dependence, making a case for photonic integrated circuits (PICs) that can take advantage of the confluence of the desirable optical and electronic properties of these nanostructures.

  14. Optical Properties of Gallium Arsenide and Indium Gallium Arsenide Quantum Wells and Their Applications to Opto-Electronic Devices.

    NASA Astrophysics Data System (ADS)

    Huang, Daming

    1990-01-01

    In this thesis we investigate the optical properties of modulation doped GaAs/AlGaAs and strained-layer undoped InGaAs/GaAs multiple quantum well structures (MQWS). The phenomena studied are the effects of carrier, strain, and the electric field on the absorption of excitons. For GaAs/AlGaAs modulation doped MQWS, the quenching of excitons by free carriers has been demonstrated. The comparison of the experimental results with calculations which consider phase space filling, screening, and exchange interaction showed the phase space filling to be the dominant mechanism responsible for the change of oscillator strength and binding energy of excitons associated with partially filled subband. On the other hand, the screening and exchange interaction are equally important to excitons associated with empty subbands. For InGaAs/GaAs strained-layer MQWS, we have demonstrated that the band edges are dramatically modified by strain. We determined the band discontinuities at InGaAs/GaAs interfaces using optical absorption, and showed that in this structure the heavy holes are confined in InGaAs layers while the light holes are in GaAs layers, in contrast to GaAs/AlGaAs MQWS. We also explore applications of GaAs/AlGaAs and InGaAs/GaAs MQWS to opto-electronic devices. The principle of devices investigated is mainly based on the electric field effect on the excitonic absorption in MQWS (the quantum confined Stark effect). Two examples presented in this thesis are the strained-layer InGaAs/GaAs MQWS electroabsorption modulators grown on GaAs substrates and the GaAs/AlGaAs MQWS reflection modulators grown on Si substrates. The large modulation observed in the absorption coefficient by an electric field is expected to facilitate opto-electronic integration.

  15. Optoelectronic interconnects for 3D wafer stacks

    NASA Astrophysics Data System (ADS)

    Ludwig, David E.; Carson, John C.; Lome, Louis S.

    1996-01-01

    Wafer and chip stacking are envisioned as a means of providing increased processing power within the small confines of a three-dimensional structure. Optoelectronic devices can play an important role in these dense 3-D processing electronic packages in two ways. In pure electronic processing, optoelectronics can provide a method for increasing the number of input/output communication channels within the layers of the 3-D chip stack. Non-free space communication links allow the density of highly parallel input/output ports to increase dramatically over typical edge bus connections. In hybrid processors, where electronics and optics play a role in defining the computational algorithm, free space communication links are typically utilized for, among other reasons, the increased network link complexity which can be achieved. Free space optical interconnections provide bandwidths and interconnection complexity unobtainable in pure electrical interconnections. Stacked 3-D architectures can provide the electronics real estate and structure to deal with the increased bandwidth and global information provided by free space optical communications. This paper provides definitions and examples of 3-D stacked architectures in optoelectronics processors. The benefits and issues of these technologies are discussed.

  16. Optoelectronic interconnects for 3D wafer stacks

    NASA Astrophysics Data System (ADS)

    Ludwig, David; Carson, John C.; Lome, Louis S.

    1996-01-01

    Wafer and chip stacking are envisioned as means of providing increased processing power within the small confines of a three-dimensional structure. Optoelectronic devices can play an important role in these dense 3-D processing electronic packages in two ways. In pure electronic processing, optoelectronics can provide a method for increasing the number of input/output communication channels within the layers of the 3-D chip stack. Non-free space communication links allow the density of highly parallel input/output ports to increase dramatically over typical edge bus connections. In hybrid processors, where electronics and optics play a role in defining the computational algorithm, free space communication links are typically utilized for, among other reasons, the increased network link complexity which can be achieved. Free space optical interconnections provide bandwidths and interconnection complexity unobtainable in pure electrical interconnections. Stacked 3-D architectures can provide the electronics real estate and structure to deal with the increased bandwidth and global information provided by free space optical communications. This paper will provide definitions and examples of 3-D stacked architectures in optoelectronics processors. The benefits and issues of these technologies will be discussed.

  17. Intriguing optoelectronic properties of metal halide perovskites

    DOE PAGES

    Manser, Joseph S.; Christians, Jeffrey A.; Kamat, Prashant V.

    2016-06-21

    Here, a new chapter in the long and distinguished history of perovskites is being written with the breakthrough success of metal halide perovskites (MHPs) as solution-processed photovoltaic (PV) absorbers. The current surge in MHP research has largely arisen out of their rapid progress in PV devices; however, these materials are potentially suitable for a diverse array of optoelectronic applications. Like oxide perovskites, MHPs have ABX 3 stoichiometry, where A and B are cations and X is a halide anion. Here, the underlying physical and photophysical properties of inorganic (A = inorganic) and hybrid organic-inorganic (A = organic) MHPs are reviewedmore » with an eye toward their potential application in emerging optoelectronic technologies. Significant attention is given to the prototypical compound methylammonium lead iodide (CH 3NH 3PbI 3) due to the preponderance of experimental and theoretical studies surrounding this material. We also discuss other salient MHP systems, including 2- dimensional compounds, where relevant. More specifically, this review is a critical account of the interrelation between MHP electronic structure, absorption, emission, carrier dynamics and transport, and other relevant photophysical processes that have propelled these materials to the forefront of modern optoelectronics research.« less

  18. A Long-Term View on Perovskite Optoelectronics.

    PubMed

    Docampo, Pablo; Bein, Thomas

    2016-02-16

    Recently, metal halide perovskite materials have become an exciting topic of research for scientists of a wide variety of backgrounds. Perovskites have found application in many fields, starting from photovoltaics and now also making an impact in light-emitting applications. This new class of materials has proven so interesting since it can be easily solution processed while exhibiting materials properties approaching the best inorganic optoelectronic materials such as GaAs and Si. In photovoltaics, in only 3 years, efficiencies have rapidly increased from an initial value of 3.8% to over 20% in recent reports for the commonly employed methylammonium lead iodide (MAPI) perovskite. The first light emitting diodes and light-emitting electrochemical cells have been developed already exhibiting internal quantum efficiencies exceeding 15% for the former and tunable light emission spectra. Despite their processing advantages, perovskite optoelectronic materials suffer from several drawbacks that need to be overcome before the technology becomes industrially relevant and hence achieve long-term application. Chief among these are the sensitivity of the structure toward moisture and crystal phase transitions in the device operation regime, unreliable device performance dictated by the operation history of the device, that is, hysteresis, the inherent toxicity of the structure, and the high cost of the employed charge selective contacts. In this Account, we highlight recent advances toward the long-term viability of perovskite photovoltaics. We identify material decomposition routes and suggest strategies to prevent damage to the structure. In particular, we focus on the effect of moisture upon the structure and stabilization of the material to avoid phase transitions in the solar cell operating range. Furthermore, we show strategies to achieve low-cost chemistries for the development of hole transporters for perovskite solar cells, necessary to be able to compete with other

  19. A Strategy to Design High-Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials.

    PubMed

    Hwang, Bohee; Lee, Jang-Sik

    2017-08-01

    The demand for high memory density has increased due to increasing needs of information storage, such as big data processing and the Internet of Things. Organic-inorganic perovskite materials that show nonvolatile resistive switching memory properties have potential applications as the resistive switching layer for next-generation memory devices, but, for practical applications, these materials should be utilized in high-density data-storage devices. Here, nanoscale memory devices are fabricated by sequential vapor deposition of organolead halide perovskite (OHP) CH 3 NH 3 PbI 3 layers on wafers perforated with 250 nm via-holes. These devices have bipolar resistive switching properties, and show low-voltage operation, fast switching speed (200 ns), good endurance, and data-retention time >10 5 s. Moreover, the use of sequential vapor deposition is extended to deposit CH 3 NH 3 PbI 3 as the memory element in a cross-point array structure. This method to fabricate high-density memory devices could be used for memory cells that occupy large areas, and to overcome the scaling limit of existing methods; it also presents a way to use OHPs to increase memory storage capacity. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Nanoscale device architectures derived from biological assemblies: The case of tobacco mosaic virus and (apo)ferritin

    NASA Astrophysics Data System (ADS)

    Calò, Annalisa; Eiben, Sabine; Okuda, Mitsuhiro; Bittner, Alexander M.

    2016-03-01

    Virus particles and proteins are excellent examples of naturally occurring structures with well-defined nanoscale architectures, for example, cages and tubes. These structures can be employed in a bottom-up assembly strategy to fabricate repetitive patterns of hybrid organic-inorganic materials. In this paper, we review methods of assembly that make use of protein and virus scaffolds to fabricate patterned nanostructures with very high spatial control. We chose (apo)ferritin and tobacco mosaic virus (TMV) as model examples that have already been applied successfully in nanobiotechnology. Their interior space and their exterior surfaces can be mineralized with inorganic layers or nanoparticles. Furthermore, their native assembly abilities can be exploited to generate periodic architectures for integration in electrical and magnetic devices. We introduce the state of the art and describe recent advances in biomineralization techniques, patterning and device production with (apo)ferritin and TMV.

  1. Exploitation of molecular mobilities for advanced organic optoelectronic and photonic nano-materials

    NASA Astrophysics Data System (ADS)

    Gray, Tomoko O.

    Electro-optically active organic materials have shown great potential in advanced technologies such as ultrafast electro-optical switches for broadband communication, light-emitting diodes, and photovoltaic cells. Currently, the maturity of chemical synthesis enables a sophisticated integration of the active elements into complex macromolecules. Also, the structure-property relationships of the isolated single electrically/optically active elements are well established. Unfortunately, such correlations involving single molecule are not applicable to complex unstructured condensed systems, in which unique mesoscale properties and complex dynamics of super-/supra-molecular structures are present. Our current challenge arises, in particular, from a deficiency of appropriate characterization tools that close the gap between phenomenological measurements and theoretical models. This work addresses submolecular mobilities relevant for opto-electronic functionalities of photoluminescent polymers and non-linear optical (NLO) materials. Thereby, I will introduce novel nanoscale thermomechanical characterization tools that are based on scanning force microscopy. From nanoscale thermomechanical measurements sub-/super-molecular mobilities of novel optoelectronic materials can be inferred and to some degree controlled. For instance, we have explored interfacial constraints as a engineering tool to control molecular mobility. This will be illustrated with electroluminescent polymers, which are prone to undesired pi-pi aggregation due to the rod-like structure---intrinsic to all conjugated polymers. The nanoscale confinement is used to reduced chain mobility, and thus, hinders undesired aggregation, and consequently, yields superior spectral stability. From the nanomaterial design perspective, I will also address mobility control with targeted molecular designs. This involves two classes of novel NLO materials, side-chain dendronized polymers and self-assembling molecular

  2. Optoelectronic aid for patients with severely restricted visual fields in daylight conditions

    NASA Astrophysics Data System (ADS)

    Peláez-Coca, María Dolores; Sobrado-Calvo, Paloma; Vargas-Martín, Fernando

    2011-11-01

    In this study we evaluated the immediate effectiveness of an optoelectronic visual field expander in a sample of subjects with retinitis pigmentosa suffering from a severe peripheral visual field restriction. The aid uses the augmented view concept and provides subjects with visual information from outside their visual field. The tests were carried out in daylight conditions. The optoelectronic aid comprises a FPGA (real-time video processor), a wide-angle mini camera and a transparent see-through head-mounted display. This optoelectronic aid is called SERBA (Sistema Electro-óptico Reconfigurable de Ayuda para Baja Visión). We previously showed that, without compromising residual vision, the SERBA system provides information about objects within an area about three times greater on average than the remaining visual field of the subjects [1]. In this paper we address the effects of the device on mobility under daylight conditions with and without SERBA. The participants were six subjects with retinitis pigmentosa. In this mobility test, better results were obtained when subjects were wearing the SERBA system; specifically, both the number of contacts with low-level obstacles and mobility errors decreased significantly. A longer training period with the device might improve its usefulness.

  3. Exfoliating and Dispersing Few-Layered Graphene in Low-Boiling-Point Organic Solvents towards Solution-Processed Optoelectronic Device Applications.

    PubMed

    Zhang, Lu; Miao, Zhongshuo; Hao, Zhen; Liu, Jun

    2016-05-06

    With normal organic surfactants, graphene can only be dispersed in water and cannot be dispersed in low-boiling-point organic solvents, which hampers its application in solution-processed organic optoelectronic devices. Herein, we report the exfoliation of graphite into graphene in low-boiling-point organic solvents, for example, methanol and acetone, by using edge-carboxylated graphene quantum dots (ECGQD) as the surfactant. The great capability of ECGQD for graphene dispersion is due to its ultralarge π-conjugated unit that allows tight adhesion on the graphene surface through strong π-π interactions, its edge-carboxylated structure that diminishes the steric effects of the oxygen-containing functional groups on the basal plane of ECGQD, and its abundance of carboxylic acid groups for solubility. The graphene dispersion in methanol enables the application of graphene:ECGQD as a cathode interlayer in polymer solar cells (PSCs). Moreover, the PSC device performance of graphene:ECGQD is better than that of Ca, the state-of-the-art cathode interlayer material. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications

    DOE PAGES

    Mitchell, Brandon; Timmerman, D.; Poplawsky, Jonathan D.; ...

    2016-01-04

    The detrimental influence of oxygen on the performance and reliability of V/III nitride based devices is well known. However, the influence of oxygen on the nature of the incorporation of other co-dopants, such as rare earth ions, has been largely overlooked in GaN. Here, we report the first comprehensive study of the critical role that oxygen has on Eu in GaN, as well as atomic scale observation of diffusion and local concentration of both atoms in the crystal lattice. We find that oxygen plays an integral role in the location, stability, and local defect structure around the Eu ions thatmore » were doped into the GaN host. Although the availability of oxygen is essential for these properties, it renders the material incompatible with GaN-based devices. However, the utilization of the normally occurring oxygen in GaN is promoted through structural manipulation, reducing its concentration by 2 orders of magnitude, while maintaining both the material quality and the favorable optical properties of the Eu ions. Furthermore, these findings open the way for full integration of RE dopants for optoelectronic functionalities in the existing GaN platform.« less

  5. Study of various n-type organic semiconductors on ultraviolet detective and electroluminescent properties of optoelectronic integrated device

    NASA Astrophysics Data System (ADS)

    Deng, Chaoxu; Shao, Bingyao; Zhao, Dan; Zhou, Dianli; Yu, Junsheng

    2017-11-01

    Organic optoelectronic integrated device (OID) with both ultraviolet (UV) detective and electroluminescent (EL) properties was fabricated by using a thermally activated delayed fluorescence (TADF) semiconductor of (4s, 6s)-2,4,5,6-tetra(9H-carbazol-9-yl)isophthalonitrile (4CzIPN) as an emitter. The effect of five kinds of n-type organic semiconductors (OSCs) on the enhancement of UV detective and EL properties of OID was systematically studied. The result shows that two orders of magnitude in UV detectivity from 109 to 1011 Jones and 3.3 folds of luminance from 2499 to 8233 cd m-2 could be achieved. The result shows that not only the difference of lowest unoccupied molecular orbital (LUMO) between active layer and OSC but also the variety of electron mobility have a significant effect on the UV detective and EL performance through adjusting electron injection/transport. Additionally, the optimized OSC thickness is beneficial to confine the leaking of holes from the active layer to cathode, leading to the decrease of dark current for high detective performance. This work provides a useful method on broadening OSC material selection and device architecture construction for the realization of high performance OID.

  6. Ligand removal and photo-activation of CsPbBr3 quantum dots for enhanced optoelectronic devices.

    PubMed

    Moyen, Eric; Kanwat, Anil; Cho, Sinyoung; Jun, Haeyeon; Aad, Roy; Jang, Jin

    2018-05-10

    Perovskite quantum dots have recently emerged as a promising light source for optoelectronic applications. However, integrating them into devices while preserving their outstanding optical properties remains challenging. Due to their ionic nature, perovskite quantum dots are extremely sensitive and degrade on applying the simplest processes. To maintain their colloidal stability, they are surrounded by organic ligands; these prevent efficient charge carrier injection in devices and have to be removed. Here we report on a simple method, where a moderate thermal process followed by exposure to UV in air can efficiently remove ligands and increase the photo-luminescence of the room temperature synthesized perovskite quantum dot thin films. Annealing is accompanied by a red shift of the emission wavelength, usually attributed to the coalescence and irreversible degradation of the quantum dots. We show that it is actually related to the relaxation of the quantum dots upon the ligand removal, without the creation of non-radiative recombining defects. The quantum dot surface, as devoid of ligands, is subsequently photo-oxidized and smoothened upon exposure to UV in air, which drastically enhances their photo-luminescence. This adequate combination of treatments improves by more than an order of magnitude the performances of perovskite quantum dot light emitting diodes.

  7. Comprehensive study of the influence of different environments on degradation processes in F8BT: Correlating optoelectronic properties with Raman measurements

    NASA Astrophysics Data System (ADS)

    Linde, Sivan; Shikler, Rafi

    2013-10-01

    There is a growing interest in conjugated polymers from both industrial and academic points of views. The reasons are their tunable optoelectronic properties, ease of production, and excellent mechanical properties. However, the ease with which their optoelectronic properties are tunable make devices based on them prone to fast degradation and therefore, short life time. The issue of degradation of organic based optoelectronic devices is the topic of many ongoing researches. However, much less attention is given to degradation processes of the individual components of the devices and their dependence on the environmental conditions. In this work, we report on the degradation of a film of a polyfluorene block copolymer F8BT that is used in a variety of optoelectronic devices under different environments: Sun exposure, heating, and UV exposure in inert and ambient conditions. Degradation was observed in most of the optoelectronic properties of the film. Topographic measurements did not show observable changes of the film morphology following degradation. However, Raman spectroscopy measurements show changes that indicate degradation in one of the building blocks of the copolymer that is associated with electron's conduction. The absolute value of the correlation coefficient between the decrease in the Raman signal and the decrease in the optoelectronic properties is larger than 0.95 under sun exposure it is larger than 0.8 under all other ambient exposures and smaller than 0.65 under inert conditions. These results support the assumption that Oxygen, not necessarily through photo-oxidation, and also water play an important role in the degradation process and indicate the part of the polymer that is most susceptible to degradation.

  8. The impact of defect scattering on the quasi-ballistic transport of nanoscale conductors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Esqueda, I. S., E-mail: isanchez@isi.edu; Fritze, M.; Cress, C. D.

    2015-02-28

    Using the Landauer approach for carrier transport, we analyze the impact of defects induced by ion irradiation on the transport properties of nanoscale conductors that operate in the quasi-ballistic regime. Degradation of conductance results from a reduction of carrier mean free path due to the introduction of defects in the conducting channel. We incorporate scattering mechanisms from radiation-induced defects into calculations of the transmission coefficient and present a technique for extracting modeling parameters from near-equilibrium transport measurements. These parameters are used to describe degradation in the transport properties of nanoscale devices using a formalism that is valid under quasi-ballistic operation.more » The analysis includes the effects of bandstructure and dimensionality on the impact of defect scattering and discusses transport properties of nanoscale devices from the diffusive to the ballistic limit. We compare calculations with recently published measurements of irradiated nanoscale devices such as single-walled carbon nanotubes, graphene, and deep-submicron Si metal-oxide-semiconductor field-effect transistors.« less

  9. ``Effect of Polyalkylthiophene Microstructure on Physical and Optoelectronic Properties''

    NASA Astrophysics Data System (ADS)

    Minkler, Michael J., Jr.; Beckingham, Bryan S.

    Conjugated polymers have been of widespread interest as flexible semiconductors for organic electronic devices such as solar cells, field effect transistor,s and light-emitting diodes. Of particular interest have been alkyl-substituted polythiophenes due to their well-controlled synthesis, favorable optoelectronic properties, and solubility in organic solvents. Importantly, relatively small changes to the chemical microstructure in poly(3-alkylthiophenes) (P3ATs) can have a significant effect on the resulting physical and optoelectronic properties. For instance, the addition of aliphatic side chains onto unsubstituted polythiophene provides solubility but also greatly decreases conductivity in comparison to unsubstituted polythiophene (PT). In this work, we use Grignard metathesis polymerization to synthesize poly(3-hexylthiophene) (P3HT), PT, and statistical copolymers (P[3HT-co-T]) over a range of compositions. We examine the physical properties (melting temperature, crystallinity, etc) by differential scanning calorimetry and wide angle X-ray scattering, optoelectronic properties by UV/Vis spectroscopy, and solubility in organic solvents of these copolymers in order to gain insights into the interplay of microstructure and properties in this class of materials.

  10. Optoelectronic properties of valence-state-controlled amorphous niobium oxide

    NASA Astrophysics Data System (ADS)

    Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

    2016-06-01

    In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.

  11. Optoelectronic Fibers via Selective Amplification of In-Fiber Capillary Instabilities.

    PubMed

    Wei, Lei; Hou, Chong; Levy, Etgar; Lestoquoy, Guillaume; Gumennik, Alexander; Abouraddy, Ayman F; Joannopoulos, John D; Fink, Yoel

    2017-01-01

    Thermally drawn metal-insulator-semiconductor fibers provide a scalable path to functional fibers. Here, a ladder-like metal-semiconductor-metal photodetecting device is formed inside a single silica fiber in a controllable and scalable manner, achieving a high density of optoelectronic components over the entire fiber length and operating at a bandwidth of 470 kHz, orders of magnitude larger than any other drawn fiber device. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Schmid, H., E-mail: sih@zurich.ibm.com; Borg, M.; Moselund, K.

    2015-06-08

    III–V nanoscale devices were monolithically integrated on silicon-on-insulator (SOI) substrates by template-assisted selective epitaxy (TASE) using metal organic chemical vapor deposition. Single crystal III–V (InAs, InGaAs, GaAs) nanostructures, such as nanowires, nanostructures containing constrictions, and cross junctions, as well as 3D stacked nanowires were directly obtained by epitaxial filling of lithographically defined oxide templates. The benefit of TASE is exemplified by the straightforward fabrication of nanoscale Hall structures as well as multiple gate field effect transistors (MuG-FETs) grown co-planar to the SOI layer. Hall measurements on InAs nanowire cross junctions revealed an electron mobility of 5400 cm{sup 2}/V s, while the alongsidemore » fabricated InAs MuG-FETs with ten 55 nm wide, 23 nm thick, and 390 nm long channels exhibit an on current of 660 μA/μm and a peak transconductance of 1.0 mS/μm at V{sub DS} = 0.5 V. These results demonstrate TASE as a promising fabrication approach for heterogeneous material integration on Si.« less

  13. Nanoscale Device Properties of Tellurium-based Chalcogenide Compounds

    NASA Astrophysics Data System (ADS)

    Dahal, Bishnu R.

    The great progress achieved in miniaturization of microelectronic devices has now reached a distinct bottleneck, as devices are starting to approach the fundamental fabrication and performance limit. Even if a major breakthrough is made in the fabrication process, these scaled down electronic devices will not function properly since the quantum effects can no longer be neglected in the nanoscale regime. Advances in nanotechnology and new materials are driving novel technologies for future device applications. Current microelectronic devices have the smallest feature size, around 10 nm, and the industry is planning to switch away from silicon technology in the near future. The new technology will be fundamentally different. There are several leading technologies based on spintronics, tunneling transistors, and the newly discovered 2-dimensional material systems. All of these technologies are at the research level, and are far from ready for use in making devices in large volumes. This dissertation will focus on a very promising material system, Te-based chalcogenides, which have potential applications in spintronics, thermoelectricity and topological insulators that can lead to low-power-consumption electronics. Very recently it was predicted and experimentally observed that the spin-orbit interaction in certain materials can lead to a new electronic state called topological insulating phase. The topological insulator, like an ordinary insulator, has a bulk energy gap separating the highest occupied electronic band from the lowest empty band. However, the surface states in the case of a three-dimensional or edge states in a two-dimensional topological insulator allow electrons to conduct at the surface, due to the topological character of the bulk wavefunctions. These conducting states are protected by time-reversal symmetry, and cannot be eliminated by defects or chemical passivation. The edge/surface states satisfy Dirac dispersion relations, and hence the physics

  14. Fabrication of Nanoscale Circuits on Inkjet-Printing Patterned Substrates.

    PubMed

    Chen, Shuoran; Su, Meng; Zhang, Cong; Gao, Meng; Bao, Bin; Yang, Qiang; Su, Bin; Song, Yanlin

    2015-07-08

    Nanoscale circuits are fabricated by assembling different conducting materials (e.g., metal nanoparticles, metal nano-wires, graphene, carbon nanotubes, and conducting polymers) on inkjet-printing patterned substrates. This non-litho-graphy strategy opens a new avenue for integrating conducting building blocks into nanoscale devices in a cost-efficient manner. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Observation of conducting filament growth in nanoscale resistive memories

    NASA Astrophysics Data System (ADS)

    Yang, Yuchao; Gao, Peng; Gaba, Siddharth; Chang, Ting; Pan, Xiaoqing; Lu, Wei

    2012-03-01

    Nanoscale resistive switching devices, sometimes termed memristors, have recently generated significant interest for memory, logic and neuromorphic applications. Resistive switching effects in dielectric-based devices are normally assumed to be caused by conducting filament formation across the electrodes, but the nature of the filaments and their growth dynamics remain controversial. Here we report direct transmission electron microscopy imaging, and structural and compositional analysis of the nanoscale conducting filaments. Through systematic ex-situ and in-situ transmission electron microscopy studies on devices under different programming conditions, we found that the filament growth can be dominated by cation transport in the dielectric film. Unexpectedly, two different growth modes were observed for the first time in materials with different microstructures. Regardless of the growth direction, the narrowest region of the filament was found to be near the dielectric/inert-electrode interface in these devices, suggesting that this region deserves particular attention for continued device optimization.

  16. Semiconductor laser-based optoelectronics oscillators

    NASA Astrophysics Data System (ADS)

    Yao, X. S.; Maleki, Lute; Wu, Chi; Davis, Lawrence J.; Forouhar, Siamak

    1998-08-01

    We demonstrate the realization of coupled opto-electronic oscillators (COEO) with different semiconductor lasers, including a ring laser, a Fabry-Perot laser, and a colliding pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 picoseconds and RF signals as high in frequency as 18 GHz with a spectral purity comparable with a HP8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.

  17. Integrated Optoelectronics for Parallel Microbioanalysis

    NASA Technical Reports Server (NTRS)

    Stirbl, Robert; Moynihan, Philip; Bearman, Gregory; Lane, Arthur

    2003-01-01

    Miniature, relatively inexpensive microbioanalytical systems ("laboratory-on-achip" devices) have been proposed for the detection of hazardous microbes and toxic chemicals. Each system of this type would include optoelectronic sensors and sensor-output-processing circuitry that would simultaneously look for the optical change, fluorescence, delayed fluorescence, or phosphorescence signatures from multiple redundant sites that have interacted with the test biomolecules in order to detect which one(s) was present in a given situation. These systems could be used in a variety of settings that could include doctors offices, hospitals, hazardous-material laboratories, biological-research laboratories, military operations, and chemical-processing plants.

  18. Nanoscale plasmonic waveguides for filtering and demultiplexing devices

    NASA Astrophysics Data System (ADS)

    Akjouj, A.; Noual, A.; Pennec, Y.; Bjafari-Rouhani, B.

    2010-05-01

    Numerical simulations, based on a FDTD (finite-difference-time-domain) method, of infrared light propagation for add/drop filtering in two-dimensional (2D) Ag-SiO2-Ag resonators are reported to design 2D Y-bent plasmonic waveguides with possible applications in telecommunication WDM (wavelength demultiplexing). First, we study optical transmission and reflection of a nanoscale SiO2 waveguide coupled to a nanocavity of the same insulator located either inside or on the side of a linear waveguide sandwiched between Ag. According to the inside or outside positioning of the nanocavity with respect to the waveguide, the transmission spectrum displays peaks or dips, respectively, which occur at the same central frequency. A fundamental study of the possible cavity modes in the near-infrared frequency band is also given. These filtering properties are then exploited to propose a nanoscale demultiplexer based on a Y-shaped plasmonic waveguide for separation of two different wavelengths, in selection or rejection, from an input broadband signal around 1550 nm. We detail coupling of the 2D add/drop Y connector to two cavities inserted on each of its branches.

  19. Mapping nanoscale effects of localized noise-source activities on photoconductive charge transports in polymer-blend films.

    PubMed

    Shekhar, Shashank; Cho, Duckhyung; Cho, Dong-Guk; Yang, Myungjae; Hong, Seunghun

    2018-05-18

    We develolped a method to directly image the nanoscale effects of localized noise-source activities on photoconducting charge transports in domain structures of phase-separated polymer-blend films of Poly(9,9-di-n-octylfluorenyl-2,7-diyl) and Poly(9,9-di-n-octylfluorene-alt-benzothiadiazole). For the imaging, current and noise maps of the polymer-blend were recorded using a conducting nanoprobe in contact with the surface, enabling the conductivity (σ) and noise-source density (N T ) mappings under an external stimulus. The blend-films exhibited the phase-separation between the constituent polymers at domains level. Within a domain, high σ (low N T ) and low σ (high N T ) regions were observed, which could be associated with the ordered and disordered regions of a domain. In the N T maps, we observed that noise-sources strongly affected the conduction mechanism, resulting in a scaling behavior of σ ∝ [Formula: see text] in both ordered and disordered regions. When a blend film was under an influence of an external stimulus such as a high bias or an illumination, an increase in the σ was observed, but that also resulted in increases in the N T as a trade-off. Interestingly, the Δσ versus ΔN T plot exhibited an unusual scaling behavior of Δσ ∝ [Formula: see text] which is attributed to the de-trapping of carriers from deep traps by the external stimuli. In addition, we found that an external stimulus increased the conductivity at the interfaces without significantly increasing their N T , which can be the origin of the superior performances of polymer-blend based devices. These results provide valuable insight about the effects of noise-sources on nanoscale optoelectronic properties in polymer-blend films, which can be an important guideline for improving devices based on polymer-blend.

  20. Mapping nanoscale effects of localized noise-source activities on photoconductive charge transports in polymer-blend films

    NASA Astrophysics Data System (ADS)

    Shekhar, Shashank; Cho, Duckhyung; Cho, Dong-Guk; Yang, Myungjae; Hong, Seunghun

    2018-05-01

    We develolped a method to directly image the nanoscale effects of localized noise-source activities on photoconducting charge transports in domain structures of phase-separated polymer-blend films of Poly(9,9-di-n-octylfluorenyl-2,7-diyl) and Poly(9,9-di-n-octylfluorene-alt-benzothiadiazole). For the imaging, current and noise maps of the polymer-blend were recorded using a conducting nanoprobe in contact with the surface, enabling the conductivity (σ) and noise-source density (N T) mappings under an external stimulus. The blend-films exhibited the phase-separation between the constituent polymers at domains level. Within a domain, high σ (low N T) and low σ (high N T) regions were observed, which could be associated with the ordered and disordered regions of a domain. In the N T maps, we observed that noise-sources strongly affected the conduction mechanism, resulting in a scaling behavior of σ ∝ {{N}{{T}}}-0.5 in both ordered and disordered regions. When a blend film was under an influence of an external stimulus such as a high bias or an illumination, an increase in the σ was observed, but that also resulted in increases in the N T as a trade-off. Interestingly, the Δσ versus ΔN T plot exhibited an unusual scaling behavior of Δσ ∝ {{Δ }}{{N}{{T}}}0.5, which is attributed to the de-trapping of carriers from deep traps by the external stimuli. In addition, we found that an external stimulus increased the conductivity at the interfaces without significantly increasing their N T, which can be the origin of the superior performances of polymer-blend based devices. These results provide valuable insight about the effects of noise-sources on nanoscale optoelectronic properties in polymer-blend films, which can be an important guideline for improving devices based on polymer-blend.

  1. Microscopic study on the carrier distribution in optoelectronic device structures: experiment and modeling

    NASA Astrophysics Data System (ADS)

    Huang, Wenchao; Xia, Hui; Wang, Shaowei; Deng, Honghai; Wei, Peng; Li, Lu; Liu, Fengqi; Li, Zhifeng; Li, Tianxin

    2011-12-01

    Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) both are capable of mapping the 2-demensional carrier distribution in semiconductor device structures, which is essential in determining their electrical and optoelectronic performances. In this work, cross-sectional SCM1,2 is used to study the InGaAs/InP P-i-N junctions prepared by area-selective p-type diffusion. The diffusion lengths in the depth as well as the lateral directions are obtained for junctions under different window sizes in mask, which imply that narrow windows may result in shallow p-n junctions. The analysis is beneficial to design and fabricate focal plane array of near infrared photodetectors with high duty-cycle and quantum efficiency. On the other hand, SSRM provides unparalleled spatial resolution (<10 nm) in electrical characterization3 that is demanded for studying low-dimensional structures. However, to derive the carrier density from the measured local conductance in individual quantum structures, reliable model for SSRM is necessary but still not well established. Based on the carrier concentration related transport mechanisms, i.e. thermionic emission and thermionic field emission4,5, we developed a numerical model for the tip-sample Schottky contact4. The calculation is confronted with SSRM study on the dose-calibrated quantum wells (QWs).

  2. Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics.

    PubMed

    Singh, Vivek; Yu, Yixuan; Sun, Qi-C; Korgel, Brian; Nagpal, Prashant

    2014-12-21

    While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.

  3. Time-Resolved Measurements in Optoelectronic Microbioanalysis

    NASA Technical Reports Server (NTRS)

    Bearman, Gregory; Kossakovski, Dmitri

    2003-01-01

    A report presents discussion of time-resolved measurements in optoelectronic microbioanalysis. Proposed microbioanalytical laboratory-on-a-chip devices for detection of microbes and toxic chemicals would include optoelectronic sensors and associated electronic circuits that would look for fluorescence or phosphorescence signatures of multiple hazardous biomolecules in order to detect which ones were present in a given situation. The emphasis in the instant report is on gating an active-pixel sensor in the time domain, instead of filtering light in the wavelength domain, to prevent the sensor from responding to a laser pulse used to excite fluorescence or phosphorescence while enabling the sensor to respond to the decaying fluorescence or phosphorescence signal that follows the laser pulse. The active-pixel sensor would be turned on after the laser pulse and would be used to either integrate the fluorescence or phosphorescence signal over several lifetimes and many excitation pulses or else take time-resolved measurements of the fluorescence or phosphorescence. The report also discusses issues of multiplexing and of using time-resolved measurements of fluorophores with known different fluorescence lifetimes to distinguish among them.

  4. Optoelectronic date acquisition system based on FPGA

    NASA Astrophysics Data System (ADS)

    Li, Xin; Liu, Chunyang; Song, De; Tong, Zhiguo; Liu, Xiangqing

    2015-11-01

    An optoelectronic date acquisition system is designed based on FPGA. FPGA chip that is EP1C3T144C8 of Cyclone devices from Altera corporation is used as the centre of logic control, XTP2046 chip is used as A/D converter, host computer that communicates with the date acquisition system through RS-232 serial communication interface are used as display device and photo resistance is used as photo sensor. We use Verilog HDL to write logic control code about FPGA. It is proved that timing sequence is correct through the simulation of ModelSim. Test results indicate that this system meets the design requirement, has fast response and stable operation by actual hardware circuit test.

  5. Nanoscale relaxation oscillator

    DOEpatents

    Zettl, Alexander K.; Regan, Brian C.; Aloni, Shaul

    2009-04-07

    A nanoscale oscillation device is disclosed, wherein two nanoscale droplets are altered in size by mass transport, then contact each other and merge through surface tension. The device may also comprise a channel having an actuator responsive to mechanical oscillation caused by expansion and contraction of the droplets. It further has a structure for delivering atoms between droplets, wherein the droplets are nanoparticles. Provided are a first particle and a second particle on the channel member, both being made of a chargeable material, the second particle contacting the actuator portion; and electrodes connected to the channel member for delivering a potential gradient across the channel and traversing the first and second particles. The particles are spaced apart a specified distance so that atoms from one particle are delivered to the other particle by mass transport in response to the potential (e.g. voltage potential) and the first and second particles are liquid and touch at a predetermined point of growth, thereby causing merging of the second particle into the first particle by surface tension forces and reverse movement of the actuator. In a preferred embodiment, the channel comprises a carbon nanotube and the droplets comprise metal nanoparticles, e.g. indium, which is readily made liquid.

  6. A New Regime of Nanoscale Thermal Transport: Collective Diffusion Increases Dissipation Efficiency

    DTIC Science & Technology

    2015-04-21

    including thermal management in nanoelectronics and optoelectronics, thermoelectric devices, nanoenhanced photovoltaics , and nanoparticle-mediated...applications including thermoelectrics for energyharvesting, nanoparticle-mediated thermal therapy, nano- enhanced photovoltaics , and thermal... thermoelectric devices, nanoparticle- mediated thermal therapies, and nanoenhanced photovoltaics for improving clean-energy technologies. Author contributions

  7. Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic.

    PubMed

    Shahrjerdi, Davood; Bedell, Stephen W

    2013-01-09

    In recent years, flexible devices based on nanoscale materials and structures have begun to emerge, exploiting semiconductor nanowires, graphene, and carbon nanotubes. This is primarily to circumvent the existing shortcomings of the conventional flexible electronics based on organic and amorphous semiconductors. The aim of this new class of flexible nanoelectronics is to attain high-performance devices with increased packing density. However, highly integrated flexible circuits with nanoscale transistors have not yet been demonstrated. Here, we show nanoscale flexible circuits on 60 Å thick silicon, including functional ring oscillators and memory cells. The 100-stage ring oscillators exhibit the stage delay of ~16 ps at a power supply voltage of 0.9 V, the best reported for any flexible circuits to date. The mechanical flexibility is achieved by employing the controlled spalling technology, enabling the large-area transfer of the ultrathin body silicon devices to a plastic substrate at room temperature. These results provide a simple and cost-effective pathway to enable ultralight flexible nanoelectronics with unprecedented level of system complexity based on mainstream silicon technology.

  8. Interface Engineering and Morphology Study of Thin Film Organic-Inorganic Halide Perovskite Optoelectronic Devices

    NASA Astrophysics Data System (ADS)

    Meng, Lei

    significantly improved compared with cells made with organic layers. Degradation mechanisms were investigated and important guidelines were derived for future device design with a view to achieving both highly efficient and stable solar devices. Organometal halide based perovskite material has great optoelectronic proprieties, for example, shallow traps, benign grain boundaries and high diffusion length. The perovskite LEDs show pure electroluminescence (EL) with narrow full width at half maximum (FWHM), which is an advantage for display, lighting or lasing applications. In chapter five, perovskite LEDs are demonstrated employing solution processed charge injection layers with a quantum efficiency of 1.16% with a very low driving voltage.

  9. MOCVD Growth of III-V Photodetectors and Light Emitters for Integration of Optoelectronic Devices on Si substrates

    NASA Astrophysics Data System (ADS)

    Geng, Yu

    With the increase of clock speed and wiring density in integrated circuits, inter-chip and intra-chip interconnects through conventional electrical wires encounter increasing difficulties because of the large power loss and bandwidth limitation. Optical interconnects have been proposed as an alternative to copper-based interconnects and are under intense study due to their large data capacity, high data quality and low power consumption. III-V compound semiconductors offer high intrinsic electron mobility, small effective electron mass and direct bandgap, which make this material system advantageous for high-speed optoelectronic devices. The integration of III-V optoelectronic devices on Si substrates will provide the combined advantage of a high level of integration and large volume production of Si-based electronic circuitry with the superior electrical and optical performance of III-V components, paving the way to a new generation of hybrid integrated circuits. In this thesis, the direct heteroepitaxy of photodetectors (PDs) and light emitters using metal-organic chemical vapor deposition for the integration of photonic devices on Si substrates were studied. First we studied the selective-area growth of InP/GaAs on patterned Si substrates for PDs. To overcome the loading effect, a multi-temperature composite growth technique for GaAs was developed. By decreasing various defects such as dislocations and anti-phase domains, the GaAs and InP buffer layers are with good crystalline quality and the PDs show high speed and low dark current performance both at the edge and center of the large growth well. Then the growth and fabrication of GaAs/AlGaAs QW lasers were studied. Ellipsometry was used to calibrate the Al composition of AlGaAs. Thick p and n type AlGaAs with a mirrorlike surface were grown by high V/III ratio and high temperature. The GaAs/AlGaAs broad area QW laser was successfully grown and fabricated on GaAs substrate and showed a pulsed lasing result

  10. Nano Superconducting Quantum Interference device: A powerful tool for nanoscale investigations

    NASA Astrophysics Data System (ADS)

    Granata, Carmine; Vettoliere, Antonio

    2016-02-01

    The magnetic sensing at nanoscale level is a promising and interesting research topic of nanoscience. Indeed, magnetic imaging is a powerful tool for probing biological, chemical and physical systems. The study of small spin cluster, like magnetic molecules and nanoparticles, single electron, cold atom clouds, is one of the most stimulating challenges of applied and basic research of the next years. In particular, the magnetic nanoparticle investigation plays a fundamental role for the modern material science and its relative technological applications like ferrofluids, magnetic refrigeration and biomedical applications, including drug delivery, hyper-thermia cancer treatment and magnetic resonance imaging contrast-agent. Actually, one of the most ambitious goals of the high sensitivity magnetometry is the detection of elementary magnetic moment or spin. In this framework, several efforts have been devoted to the development of a high sensitivity magnetic nanosensor pushing sensing capability to the individual spin level. Among the different magnetic sensors, Superconducting QUantum Interference Devices (SQUIDs) exhibit an ultra high sensitivity and are widely employed in numerous applications. Basically, a SQUID consists of a superconducting ring (sensitive area) interrupted by two Josephson junctions. In the recent years, it has been proved that the magnetic response of nano-objects can be effectively measured by using a SQUID with a very small sensitive area (nanoSQUID). In fact, the sensor noise, expressed in terms of the elementary magnetic moment (spin or Bohr magneton), is linearly dependent on the SQUID loop side length. For this reason, SQUIDs have been progressively miniaturized in order to improve the sensitivity up to few spin per unit of bandwidth. With respect to other techniques, nanoSQUIDs offer the advantage of direct measurement of magnetization changes in small spin systems. In this review, we focus on nanoSQUIDs and its applications. In

  11. 3-DIMENSIONAL Optoelectronic

    NASA Astrophysics Data System (ADS)

    Krishnamoorthy, Ashok Venketaraman

    This thesis covers the design, analysis, optimization, and implementation of optoelectronic (N,M,F) networks. (N,M,F) networks are generic space-division networks that are well suited to implementation using optoelectronic integrated circuits and free-space optical interconnects. An (N,M,F) networks consists of N input channels each having a fanout F_{rm o}, M output channels each having a fanin F_{rm i}, and Log_{rm K}(N/F) stages of K x K switches. The functionality of the fanout, switching, and fanin stages depends on the specific application. Three applications of optoelectronic (N,M,F) networks are considered. The first is an optoelectronic (N,1,1) content -addressable memory system that achieves associative recall on two-dimensional images retrieved from a parallel-access optical memory. The design and simulation of the associative memory are discussed, and an experimental emulation of a prototype system using images from a parallel-readout optical disk is presented. The system design provides superior performance to existing electronic content-addressable memory chips in terms of capacity and search rate, and uses readily available optical disk and VLSI technologies. Next, a scalable optoelectronic (N,M,F) neural network that uses free-space holographic optical interconnects is presented. The neural architecture minimizes the number of optical transmitters needed, and provides accurate electronic fanin with low signal skew, and dendritic-type fan-in processing capability in a compact layout. Optimal data-encoding methods and circuit techniques are discussed. The implementation of an prototype optoelectronic neural system, and its application to a simple recognition task is demonstrated. Finally, the design, analysis, and optimization of a (N,N,F) self-routing, packet-switched multistage interconnection network is described. The network is suitable for parallel computing and broadband switching applications. The tradeoff between optical and electronic

  12. A Proximity-Based Programmable DNA Nanoscale Assembly Line

    PubMed Central

    Gu, Hongzhou; Chao, Jie; Xiao, Shou-Jun; Seeman, Nadrian C.

    2010-01-01

    Our ability to synthesize nanometer-scale particles with desired shapes and compositions offers the exciting prospect of generating new functional materials and devices by combining the particles in a controlled fashion into larger structures. Self-assembly can achieve this task efficiently, but may be subject to thermodynamic and kinetic limitations: Reactants, intermediates and products may collide with each other throughout the assembly timecourse to produce non-target instead of target species. An alternative approach to nanoscale assembly uses information-containing molecules such as DNA1 to control interactions and thereby minimize unwanted crosstalk between different components. In principle, this method should allow the stepwise and programmed construction of target products by fastening individually selected nanoscale components – much as an automobile is built on an assembly line. Here, we demonstrate that a nanoscale assembly line can indeed be realized by the judicious combination of three known DNA-based modules: a DNA origami2 tile that provides a framework and track for the assembly process, cassettes containing three distinct two-state DNA machines that serve as programmable cargo-donating devices3,4 and are attached4,5 in series to the tile, and a DNA walker that can move on the track from device to device and collect cargo. As the walker traverses the pathway prescribed by the origami tile track, it encounters sequentially the three DNA devices that can be independently switched between an ‘ON’ state allowing its cargo to be transferred to the walker, and an ‘OFF’ state where no transfer occurs. We use three different types of gold nanoparticles as cargo and show that the experimental system does indeed allow the controlled fabrication of the eight different products that can be obtained with three two-state devices. PMID:20463734

  13. Analysis of ballistic transport in nanoscale devices by using an accelerated finite element contact block reduction approach

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Li, H.; Li, G., E-mail: gli@clemson.edu

    2014-08-28

    An accelerated Finite Element Contact Block Reduction (FECBR) approach is presented for computational analysis of ballistic transport in nanoscale electronic devices with arbitrary geometry and unstructured mesh. Finite element formulation is developed for the theoretical CBR/Poisson model. The FECBR approach is accelerated through eigen-pair reduction, lead mode space projection, and component mode synthesis techniques. The accelerated FECBR is applied to perform quantum mechanical ballistic transport analysis of a DG-MOSFET with taper-shaped extensions and a DG-MOSFET with Si/SiO{sub 2} interface roughness. The computed electrical transport properties of the devices obtained from the accelerated FECBR approach and associated computational cost as amore » function of system degrees of freedom are compared with those obtained from the original CBR and direct inversion methods. The performance of the accelerated FECBR in both its accuracy and efficiency is demonstrated.« less

  14. Direct Probing of Polarization Charge at Nanoscale Level

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kwon, Owoong; Seol, Daehee; Lee, Dongkyu

    Ferroelectric materials possess spontaneous polarization that can be used for multiple applications. Owing to a long-term development of reducing the sizes of devices, the preparation of ferroelectric materials and devices is entering the nanometer-scale regime. In order to evaluate the ferroelectricity, there is a need to investigate the polarization charge at the nanoscale. Nonetheless, it is generally accepted that the detection of polarization charges using a conventional conductive atomic force microscopy (CAFM) without a top electrode is not feasible because the nanometer-scale radius of an atomic force microscopy (AFM) tip yields a very low signal-to-noise ratio. But, the detection ismore » unrelated to the radius of an AFM tip and, in fact, a matter of the switched area. In this work, the direct probing of the polarization charge at the nanoscale is demonstrated using the positive-up-negative-down method based on the conventional CAFM approach without additional corrections or circuits to reduce the parasitic capacitance. The polarization charge densities of 73.7 and 119.0 µC cm -2 are successfully probed in ferroelectric nanocapacitors and thin films, respectively. The results we obtained show the feasibility of the evaluation of polarization charge at the nanoscale and provide a new guideline for evaluating the ferroelectricity at the nanoscale.« less

  15. Telemedicine optoelectronic biomedical data processing system

    NASA Astrophysics Data System (ADS)

    Prosolovska, Vita V.

    2010-08-01

    The telemedicine optoelectronic biomedical data processing system is created to share medical information for the control of health rights and timely and rapid response to crisis. The system includes the main blocks: bioprocessor, analog-digital converter biomedical images, optoelectronic module for image processing, optoelectronic module for parallel recording and storage of biomedical imaging and matrix screen display of biomedical images. Rated temporal characteristics of the blocks defined by a particular triggering optoelectronic couple in analog-digital converters and time imaging for matrix screen. The element base for hardware implementation of the developed matrix screen is integrated optoelectronic couples produced by selective epitaxy.

  16. Facile Fabrication of Binary Nanoscale Interface for No-Loss Microdroplet Transportation.

    PubMed

    Liang, Weitao; Zhu, Liqun; Li, Weiping; Xu, Chang; Liu, Huicong

    2016-06-07

    Binary nanoscale interfacial materials are fundamental issues in many applications for smart surfaces. A binary nanoscale interface with binary surface morphology and binary wetting behaviors has been prepared by a facile wet-chemical method. The prepared surface presents superhydrophobicity and high adhesion with the droplet at the same time. The composition, surface morphology, and wetting behaviors of the prepared surface have been systematic studied. The special wetting behaviors can be contributed to the binary nanoscale effect. The stability of the prepared surface was also investigated. As a primary application, a facile device based on the prepared binary nanoscale interface with superhydrophobicity and high adhesion was constructed for microdroplet transportation.

  17. Development of a Cryostat to Characterize Nano-scale Superconducting Quantum Interference Devices

    NASA Astrophysics Data System (ADS)

    Longo, Mathew; Matheny, Matthew; Knudsen, Jasmine

    2016-03-01

    We have designed and constructed a low-noise vacuum cryostat to be used for the characterization of nano-scale superconducting quantum interference devices (SQUIDs). Such devices are very sensitive to magnetic fields and can measure changes in flux on the order of a single electron magnetic moment. As a part of the design process, we calculated the separation required between the cryogenic preamplifier and superconducting magnet, including a high-permeability magnetic shield, using a finite-element model of the apparatus. The cryostat comprises a vacuum cross at room temperature for filtered DC and shielded RF electrical connections, a thin-wall stainless steel support tube, a taper-sealed cryogenic vacuum can, and internal mechanical support and wiring for the nanoSQUID. The Dewar is modified with a room-temperature flange with a sliding seal for the cryostat. The flange supports the superconducting 3 Tesla magnet and thermometry wiring. Upon completion of the cryostat fabrication and Dewar modifications, operation of the nanoSQUIDs as transported from our collaborator's laboratory in Israel will be confirmed, as the lead forming the SQUID is sensitive to oxidation and the SQUIDs must be shipped in a vacuum container. After operation of the nanoSQUIDs is confirmed, the primary work of characterizing their high-speed properties will begin. This will include looking at the measurement of relaxation oscillations at high bandwidth in comparison to the theoretical predictions of the current model.

  18. Nanoscale wear as a stress-assisted chemical reaction

    NASA Astrophysics Data System (ADS)

    Jacobs, Tevis D. B.; Carpick, Robert W.

    2013-02-01

    Wear of sliding contacts leads to energy dissipation and device failure, resulting in massive economic and environmental costs. Typically, wear phenomena are described empirically, because physical and chemical interactions at sliding interfaces are not fully understood at any length scale. Fundamental insights from individual nanoscale contacts are crucial for understanding wear at larger length scales, and to enable reliable nanoscale devices, manufacturing and microscopy. Observable nanoscale wear mechanisms include fracture and plastic deformation, but recent experiments and models propose another mechanism: wear via atom-by-atom removal (`atomic attrition'), which can be modelled using stress-assisted chemical reaction kinetics. Experimental evidence for this has so far been inferential. Here, we quantitatively measure the wear of silicon--a material relevant to small-scale devices--using in situ transmission electron microscopy. We resolve worn volumes as small as 25 +/- 5 nm3, a factor of 103 lower than is achievable using alternative techniques. Wear of silicon against diamond is consistent with atomic attrition, and inconsistent with fracture or plastic deformation, as shown using direct imaging. The rate of atom removal depends exponentially on stress in the contact, as predicted by chemical rate kinetics. Measured activation parameters are consistent with an atom-by-atom process. These results, by direct observation, establish atomic attrition as the primary wear mechanism of silicon in vacuum at low loads.

  19. Strain-engineered optoelectronic properties of 2D transition metal dichalcogenide lateral heterostructures

    DOE PAGES

    Lee, Jaekwang; Huang, Jingsong; Sumpter, Bobby G.; ...

    2017-02-17

    Compared with their bulk counterparts, 2D materials can sustain much higher elastic strain at which optical quantities such as bandgaps and absorption spectra governing optoelectronic device performance can be modified with relative ease. Using first-principles density functional theory and quasiparticle GW calculations, we demonstrate how uniaxial tensile strain can be utilized to optimize the electronic and optical properties of transition metal dichalcogenide lateral (in-plane) heterostructures such as MoX 2/WX 2 (X = S, Se, Te). We find that these lateral-type heterostructures may facilitate efficient electron–hole separation for light detection/harvesting and preserve their type II characteristic up to 12% of uniaxialmore » strain. Based on the strain-dependent bandgap and band offset, we show that uniaxial tensile strain can significantly increase the power conversion efficiency of these lateral heterostructures. Our results suggest that these strain-engineered lateral heterostructures are promising for optimizing optoelectronic device performance by selectively tuning the energetics of the bandgap.« less

  20. Near-Field Thermal Coupling of a Nanoscale Interface and QED Kapitza Conductance of Nano-Carbon Thermal Interconnect Materials

    DTIC Science & Technology

    2015-10-26

    Conductance  in Nanocarbon Thermal Interconnects", in Proceedings of Workshop on Innovative Nanoscale  Devices and Systems, Eds.  Koji  Ishibashi, Stephen M...Workshop on Innovative Nanoscale  Devices and Systems, Eds. Viktor Sverdlov, Berry Jonker, Siegfried Selberherr,  Koji  Ishibashi,  Stephen M. Goodnick...Proceedings of Workshop on Innovative Nanoscale Devices and Systems, Eds. Koji Ishibashi, Stephen M. Goodnick, Siegfried Selberherr, Akira Fujiwara (12/2-7

  1. Organic-inorganic hybrid lead halide perovskites for optoelectronic and electronic applications.

    PubMed

    Zhao, Yixin; Zhu, Kai

    2016-02-07

    Organic and inorganic hybrid perovskites (e.g., CH(3)NH(3)PbI(3)), with advantages of facile processing, tunable bandgaps, and superior charge-transfer properties, have emerged as a new class of revolutionary optoelectronic semiconductors promising for various applications. Perovskite solar cells constructed with a variety of configurations have demonstrated unprecedented progress in efficiency, reaching about 20% from multiple groups after only several years of active research. A key to this success is the development of various solution-synthesis and film-deposition techniques for controlling the morphology and composition of hybrid perovskites. The rapid progress in material synthesis and device fabrication has also promoted the development of other optoelectronic applications including light-emitting diodes, photodetectors, and transistors. Both experimental and theoretical investigations on organic-inorganic hybrid perovskites have enabled some critical fundamental understandings of this material system. Recent studies have also demonstrated progress in addressing the potential stability issue, which has been identified as a main challenge for future research on halide perovskites. Here, we review recent progress on hybrid perovskites including basic chemical and crystal structures, chemical synthesis of bulk/nanocrystals and thin films with their chemical and physical properties, device configurations, operation principles for various optoelectronic applications (with a focus on solar cells), and photophysics of charge-carrier dynamics. We also discuss the importance of further understanding of the fundamental properties of hybrid perovskites, especially those related to chemical and structural stabilities.

  2. Self-assembled III-V quantum dots: potential for silicon optoelectronics

    NASA Technical Reports Server (NTRS)

    Leon, R.

    2001-01-01

    The basic optoelectronic properties of self-forming InGaAs/InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs/InGaAs QDs grown on dislocationarrays are discussed in terms of an enabling technology which will allow optelectronics integration with silicon technology.

  3. Optical surface analysis: a new technique for the inspection and metrology of optoelectronic films and wafers

    NASA Astrophysics Data System (ADS)

    Bechtler, Laurie; Velidandla, Vamsi

    2003-04-01

    In response to demand for higher volumes and greater product capability, integrated optoelectronic device processing is rapidly increasing in complexity, benefiting from techniques developed for conventional silicon integrated circuit processing. The needs for high product yield and low manufacturing cost are also similar to the silicon wafer processing industry. This paper discusses the design and use of an automated inspection instrument called the Optical Surface Analyzer (OSA) to evaluate two critical production issues in optoelectronic device manufacturing: (1) film thickness uniformity, and (2) defectivity at various process steps. The OSA measurement instrument is better suited to photonics process development than most equipment developed for conventional silicon wafer processing in two important ways: it can handle both transparent and opaque substrates (unlike most inspection and metrology tools), and it is a full-wafer inspection method that captures defects and film variations over the entire substrate surface (unlike most film thickness measurement tools). Measurement examples will be provided in the paper for a variety of films and substrates used for optoelectronics manufacturing.

  4. Nanoscale patterning of electronic devices at the amorphous LaAlO3/SrTiO3 oxide interface using an electron sensitive polymer mask

    NASA Astrophysics Data System (ADS)

    Bjørlig, Anders V.; von Soosten, Merlin; Erlandsen, Ricci; Dahm, Rasmus Tindal; Zhang, Yu; Gan, Yulin; Chen, Yunzhong; Pryds, Nini; Jespersen, Thomas S.

    2018-04-01

    A simple approach is presented for designing complex oxide mesoscopic electronic devices based on the conducting interfaces of room temperature grown LaAlO3/SrTiO3 heterostructures. The technique is based entirely on methods known from conventional semiconductor processing technology, and we demonstrate a lateral resolution of ˜100 nm. We study the low temperature transport properties of nanoscale wires and demonstrate the feasibility of the technique for defining in-plane gates allowing local control of the electrostatic environment in mesoscopic devices.

  5. Black phosphorus ink formulation for inkjet printing of optoelectronics and photonics.

    PubMed

    Hu, Guohua; Albrow-Owen, Tom; Jin, Xinxin; Ali, Ayaz; Hu, Yuwei; Howe, Richard C T; Shehzad, Khurram; Yang, Zongyin; Zhu, Xuekun; Woodward, Robert I; Wu, Tien-Chun; Jussila, Henri; Wu, Jiang-Bin; Peng, Peng; Tan, Ping-Heng; Sun, Zhipei; Kelleher, Edmund J R; Zhang, Meng; Xu, Yang; Hasan, Tawfique

    2017-08-17

    Black phosphorus is a two-dimensional material of great interest, in part because of its high carrier mobility and thickness dependent direct bandgap. However, its instability under ambient conditions limits material deposition options for device fabrication. Here we show a black phosphorus ink that can be reliably inkjet printed, enabling scalable development of optoelectronic and photonic devices. Our binder-free ink suppresses coffee ring formation through induced recirculating Marangoni flow, and supports excellent consistency (< 2% variation) and spatial uniformity (< 3.4% variation), without substrate pre-treatment. Due to rapid ink drying (< 10 s at < 60 °C), printing causes minimal oxidation. Following encapsulation, the printed black phosphorus is stable against long-term (> 30 days) oxidation. We demonstrate printed black phosphorus as a passive switch for ultrafast lasers, stable against intense irradiation, and as a visible to near-infrared photodetector with high responsivities. Our work highlights the promise of this material as a functional ink platform for printed devices.Atomically thin black phosphorus shows promise for optoelectronics and photonics, yet its instability under environmental conditions and the lack of well-established large-area synthesis protocols hinder its applications. Here, the authors demonstrate a stable black phosphorus ink suitable for printed ultrafast lasers and photodetectors.

  6. Towards lead-free perovskite photovoltaics and optoelectronics by ab-initio simulations.

    PubMed

    Roknuzzaman, Md; Ostrikov, Kostya Ken; Wang, Hongxia; Du, Aijun; Tesfamichael, Tuquabo

    2017-10-25

    Lead (Pb) free non-toxic perovskite solar cells have become more important in the commercialization of the photovoltaic devices. In this study the structural, electronic, optical and mechanical properties of Pb-free inorganic metal halide cubic perovskites CsBX 3 (B = Sn, Ge; X = I, Br, Cl) for perovskite solar cells are simulated using first-principles Density Functional Theory (DFT). These compounds are semiconductors with direct band gap energy and mechanically stable. Results suggest that the materials have high absorption coefficient, low reflectivity and high optical conductivity with potential application in solar cells and other optoelectronic energy devices. On the basis of the optical properties, one can expect that the Germanium (Ge) would be a better replacement of Pb as Ge containing compounds have higher optical absorption and optical conductivity than that of Pb containing compounds. A combinational analysis of the electronic, optical and mechanical properties of the compounds suggests that CsGeI 3 based perovskite is the best Pb-free inorganic metal halide semiconductor for the solar cell application. However, the compound with solid solution of CsGe(I 0.7 Br 0.3 ) 3 is found to be mechanically more ductile than CsGeI 3 . This study will also guide to obtain Pb-free organic perovskites for optoelectronic devices.

  7. A Look Inside Argonne's Center for Nanoscale Materials

    ScienceCinema

    Divan, Ralu; Rosenthal, Dan; Rose, Volker; Wai Hla

    2018-05-23

    At a very small, or "nano" scale, materials behave differently. The study of nanomaterials is much more than miniaturization - scientists are discovering how changes in size change a material's properties. From sunscreen to computer memory, the applications of nanoscale materials research are all around us. Researchers at Argonne's Center for Nanoscale Materials are creating new materials, methods and technologies to address some of the world's greatest challenges in energy security, lightweight but durable materials, high-efficiency lighting, information storage, environmental stewardship and advanced medical devices.

  8. Release strategies for making transferable semiconductor structures, devices and device components

    DOEpatents

    Rogers, John A; Nuzzo, Ralph G; Meitl, Matthew; Ko, Heung Cho; Yoon, Jongseung; Menard, Etienne; Baca, Alfred J

    2014-11-25

    Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

  9. Release strategies for making transferable semiconductor structures, devices and device components

    DOEpatents

    Rogers, John A [Champaign, IL; Nuzzo, Ralph G [Champaign, IL; Meitl, Matthew [Raleigh, NC; Ko, Heung Cho [Urbana, IL; Yoon, Jongseung [Urbana, IL; Menard, Etienne [Durham, NC; Baca, Alfred J [Urbana, IL

    2011-04-26

    Provided are methods for making a device or device component by providing a multilayer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

  10. Release strategies for making transferable semiconductor structures, devices and device components

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Rogers, John A.; Nuzzo, Ralph G.; Meitl, Matthew

    2016-05-24

    Provided are methods for making a device or device component by providing a multi layer structure having a plurality of functional layers and a plurality of release layers and releasing the functional layers from the multilayer structure by separating one or more of the release layers to generate a plurality of transferable structures. The transferable structures are printed onto a device substrate or device component supported by a device substrate. The methods and systems provide means for making high-quality and low-cost photovoltaic devices, transferable semiconductor structures, (opto-)electronic devices and device components.

  11. Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations

    NASA Astrophysics Data System (ADS)

    Hong, Xia

    2016-03-01

    Combining the nonvolatile, locally switchable polarization field of a ferroelectric thin film with a nanoscale electronic material in a field effect transistor structure offers the opportunity to examine and control a rich variety of mesoscopic phenomena and interface coupling. It is also possible to introduce new phases and functionalities into these hybrid systems through rational design. This paper reviews two rapidly progressing branches in the field of ferroelectric transistors, which employ two distinct classes of nanoscale electronic materials as the conducting channel, the two-dimensional (2D) electron gas graphene and the strongly correlated transition metal oxide thin films. The topics covered include the basic device physics, novel phenomena emerging in the hybrid systems, critical mechanisms that control the magnitude and stability of the field effect modulation and the mobility of the channel material, potential device applications, and the performance limitations of these devices due to the complex interface interactions and challenges in achieving controlled materials properties. Possible future directions for this field are also outlined, including local ferroelectric gate control via nanoscale domain patterning and incorporating other emergent materials in this device concept, such as the simple binary ferroelectrics, layered 2D transition metal dichalcogenides, and the 4d and 5d heavy metal compounds with strong spin-orbit coupling.

  12. Dielectric Metasurface as a Platform for Spatial Mode Conversion in Nanoscale Waveguides.

    PubMed

    Ohana, David; Desiatov, Boris; Mazurski, Noa; Levy, Uriel

    2016-12-14

    We experimentally demonstrate a nanoscale mode converter that performs coupling between the first two transverse electric-like modes of a silicon-on-insulator waveguide. The device operates by introducing a nanoscale periodic perturbation in its effective refractive index along the propagation direction and a graded effective index profile along its transverse direction. The periodic perturbation provides phase matching between the modes, while the graded index profile, which is realized by the implementation of nanoscale dielectric metasurface consisting of silicon features that are etched into the waveguide taking advantage of the effective medium concept, provides the overlap between the modes. Following the device design and numerical analysis using three-dimensional finite difference time domain simulations, we have fabricated the device and characterized it by directly measuring the modal content using optical imaging microscopy. From these measurements, the mode purity is estimated to be 95% and the transmission relative to an unperturbed strip waveguide is as high as 88%. Finally, we extend this approach to accommodate for the coupling between photonic and plasmonic modes. Specifically, we design and numerically demonstrate photonic to plasmonic mode conversion in a hybrid waveguide in which photonic and surface plasmon polariton modes can be guided in the silicon core and in the silicon/metal interface, respectively. The same method can also be used for coupling between symmetric and antisymmetric plasmonic modes in metal-insulator-metal or insulator-metal-insulator structures. On the basis of the current demonstration, we believe that such nanoscale dielectric metasurface-based mode converters can now be realized and become an important building block in future nanoscale photonic and plasmonic devices. Furthermore, the demonstrated platform can be used for the implementation of other chip scale components such as splitters, combiners couplers, and more.

  13. Reactive tunnel junctions in electrically driven plasmonic nanorod metamaterials

    NASA Astrophysics Data System (ADS)

    Wang, Pan; Krasavin, Alexey V.; Nasir, Mazhar E.; Dickson, Wayne; Zayats, Anatoly V.

    2018-02-01

    Non-equilibrium hot carriers formed near the interfaces of semiconductors or metals play a crucial role in chemical catalysis and optoelectronic processes. In addition to optical illumination, an efficient way to generate hot carriers is by excitation with tunnelling electrons. Here, we show that the generation of hot electrons makes the nanoscale tunnel junctions highly reactive and facilitates strongly confined chemical reactions that can, in turn, modulate the tunnelling processes. We designed a device containing an array of electrically driven plasmonic nanorods with up to 1011 tunnel junctions per square centimetre, which demonstrates hot-electron activation of oxidation and reduction reactions in the junctions, induced by the presence of O2 and H2 molecules, respectively. The kinetics of the reactions can be monitored in situ following the radiative decay of tunnelling-induced surface plasmons. This electrically driven plasmonic nanorod metamaterial platform can be useful for the development of nanoscale chemical and optoelectronic devices based on electron tunnelling.

  14. Novel BTlGaN semiconducting materials for infrared opto-electronic devices

    NASA Astrophysics Data System (ADS)

    Assali, Abdenacer; Bouslama, M'hamed

    2017-03-01

    BTlGaN quaternary alloys are proposed as new semiconductor materials for infrared opto-electronic applications. The structural and opto-electronic properties of zinc blende BxTlyGa1-x-yN alloys lattice matched to GaN with (0 ⩽ x and y ⩽ 0.187) are studied using density functional theory (DFT) within full-potential linearized augmented plane wave (FP-LAPW) method. The calculated structural parameters such as lattice constant a0 and bulk modulus B0 are found to be in good agreement with experimental data using the new form of generalized gradient approximation (GGA-WC). The band gaps of the compounds are also found very close to the experimental results using the recently developed Tran-Blaha-modified Becke-Johnson (TB-mBJ) exchange potential. A quaternary BxTlyGa1-x-yN is expected to be lattice matched to the GaN substrate with concentrations x = 0.125 and y = 0.187 allows to produce high interface layers quality. It has been found that B incorporation into BTlGaN does not significantly affect the band gap, while the addition of dilute Tl content leads to induce a strong reduction of the band gap, which in turn increases the emission wavelengths to the infrared region. The refractivity, reflectivity and absorption coefficient of these alloys were investigated. BTlGaN/GaN is an interesting new material to be used as active layer/barriers in quantum wells suitable for realizing advanced Laser Diodes and Light-Emitting Diodes as new sources of light emitting in the infrared spectrum region.

  15. Plant virus directed fabrication of nanoscale materials and devices

    DTIC Science & Technology

    2015-03-26

    stringent coating processes as well as yield novel materials with unique conductive and mesoscale structures (Fowler et al., 2001; Niu et al., 2007a...steel and then coated by ELD with conductive nickel or cobalt. Several fabrication methods including atomic layer deposition, sputtering, electro...novel columnar nanowire structure that when coatedwith conductive nickel provides a forest of nanoscale electrodes that can be coated with silicon by

  16. Plasmofluidics: Merging Light and Fluids at the Micro-/Nanoscale.

    PubMed

    Wang, Mingsong; Zhao, Chenglong; Miao, Xiaoyu; Zhao, Yanhui; Rufo, Joseph; Liu, Yan Jun; Huang, Tony Jun; Zheng, Yuebing

    2015-09-16

    Plasmofluidics is the synergistic integration of plasmonics and micro/nanofluidics in devices and applications in order to enhance performance. There has been significant progress in the emerging field of plasmofluidics in recent years. By utilizing the capability of plasmonics to manipulate light at the nanoscale, combined with the unique optical properties of fluids and precise manipulation via micro/nanofluidics, plasmofluidic technologies enable innovations in lab-on-a-chip systems, reconfigurable photonic devices, optical sensing, imaging, and spectroscopy. In this review article, the most recent advances in plasmofluidics are examined and categorized into plasmon-enhanced functionalities in microfluidics and microfluidics-enhanced plasmonic devices. The former focuses on plasmonic manipulations of fluids, bubbles, particles, biological cells, and molecules at the micro/nanoscale. The latter includes technological advances that apply microfluidic principles to enable reconfigurable plasmonic devices and performance-enhanced plasmonic sensors. The article is concluded with perspectives on the upcoming challenges, opportunities, and possible future directions of the emerging field of plasmofluidics. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Conductive polymer nanowire gas sensor fabricated by nanoscale soft lithography.

    PubMed

    Tang, Ning; Jiang, Yang; Qu, Hemi; Duan, Xuexin

    2017-12-01

    Resistive devices composed of one-dimensional nanostructures are promising candidates for the next generation of gas sensors. However, the large-scale fabrication of nanowires is still challenging, which restricts the commercialization of such devices. Here, we report a highly efficient and facile approach to fabricating poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) nanowire chemiresistive gas sensors by nanoscale soft lithography. Well-defined sub-100 nm nanowires are fabricated on silicon substrate, which facilitates device integration. The nanowire chemiresistive gas sensor is demonstrated for NH 3 and NO 2 detection at room temperature and shows a limit of detection at ppb level, which is compatible with nanoscale PEDOT:PSS gas sensors fabricated with the conventional lithography technique. In comparison with PEDOT:PSS thin-film gas sensors, the nanowire gas sensor exhibits higher sensitivity and a much faster response to gas molecules.

  18. Conductive polymer nanowire gas sensor fabricated by nanoscale soft lithography

    NASA Astrophysics Data System (ADS)

    Tang, Ning; Jiang, Yang; Qu, Hemi; Duan, Xuexin

    2017-12-01

    Resistive devices composed of one-dimensional nanostructures are promising candidates for the next generation of gas sensors. However, the large-scale fabrication of nanowires is still challenging, which restricts the commercialization of such devices. Here, we report a highly efficient and facile approach to fabricating poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) nanowire chemiresistive gas sensors by nanoscale soft lithography. Well-defined sub-100 nm nanowires are fabricated on silicon substrate, which facilitates device integration. The nanowire chemiresistive gas sensor is demonstrated for NH3 and NO2 detection at room temperature and shows a limit of detection at ppb level, which is compatible with nanoscale PEDOT:PSS gas sensors fabricated with the conventional lithography technique. In comparison with PEDOT:PSS thin-film gas sensors, the nanowire gas sensor exhibits higher sensitivity and a much faster response to gas molecules.

  19. Solid state carbon nanotube device for controllable trion electroluminescence emission

    NASA Astrophysics Data System (ADS)

    Liang, Shuang; Ma, Ze; Wei, Nan; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

    2016-03-01

    Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for gradually increasing bias were also investigated. The realization of electrically induced pure trion emission opens up a new opportunity for CNT film-based optoelectronic devices, providing a new degree of freedom in controlling the devices to extend potential applications in spin or magnetic optoelectronics fields.Semiconducting carbon nanotubes (CNTs) have a direct chirality-dependent bandgap and reduced dimensionality-related quantum confinement effects, which are closely related to the performance of optoelectronic devices. Here, taking advantage of the large energy separations between neutral singlet excitons and charged excitons, i.e. trions in CNTs, we have achieved for the first time all trion electroluminescence (EL) emission from chirality-sorted (8,3) and (8,4) CNT-based solid state devices. We showed that strong trion emission can be obtained as a result of localized impact excitation and electrically injected holes, with an estimated efficiency of ~5 × 10-4 photons per injected hole. The importance of contact-controlled carrier injection (including symmetric and asymmetric contact configurations) and EL spectral stability for

  20. Study of buckling behavior at the nanoscale through capillary adhesion force

    NASA Astrophysics Data System (ADS)

    Lorenzoni, Matteo; Llobet, Jordi; Perez-Murano, Francesc

    2018-05-01

    This paper presents mechanical actuation experiments performed on ultrathin suspended nanoscale silicon devices presenting Euler buckling. The devices are fabricated by a combination of focused ion beam implantation and selective wet etching. By loading the center of curved nanobeams with an atomic force microscope tip, the beams can be switched from an up-buckled position to the opposite down-buckled configuration. It is possible to describe the entire snap-through process, thanks to the presence of strong capillary forces that act as a physical constraint between the tip and the device. The experiments conducted recall the same behavior of macro- and microscale devices with similar geometry. Curved nanobeams present a bistable behavior, i.e., they are stable in both configurations, up or down-buckled. In addition to that, by the method presented, it is possible to observe the dynamic of a mechanical switch at the nanoscale.

  1. Mixed electrochemical–ferroelectric states in nanoscale ferroelectrics

    DOE PAGES

    Yang, Sang Mo; Morozovska, Anna N.; Kumar, Rajeev; ...

    2017-05-01

    Ferroelectricity on the nanoscale has been the subject of much fascination in condensed-matter physics for over half a century. In recent years, multiple reports claiming ferroelectricity in ultrathin ferroelectric films based on the formation of remnant polarization states, local electromechanical hysteresis loops, and pressure-induced switching were made. But, similar phenomena were reported for traditionally non-ferroelectric materials, creating a significant level of uncertainty in the field. We show that in nanoscale systems the ferroelectric state is fundamentally inseparable from the electrochemical state of the surface, leading to the emergence of a mixed electrochemical–ferroelectric state. We explore the nature, thermodynamics, and thicknessmore » evolution of such states, and demonstrate the experimental pathway to establish its presence. Our analysis reconciles multiple prior studies, provides guidelines for studies of ferroelectric materials on the nanoscale, and establishes the design paradigm for new generations of ferroelectric-based devices.« less

  2. Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

    PubMed Central

    Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

    2016-01-01

    The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics. PMID:27507171

  3. Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion

    NASA Astrophysics Data System (ADS)

    Tan, Wei-Chun; Chiang, Chia-Wei; Hofmann, Mario; Chen, Yang-Fang

    2016-08-01

    The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene’s unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics.

  4. Neuromorphic computing with nanoscale spintronic oscillators.

    PubMed

    Torrejon, Jacob; Riou, Mathieu; Araujo, Flavio Abreu; Tsunegi, Sumito; Khalsa, Guru; Querlioz, Damien; Bortolotti, Paolo; Cros, Vincent; Yakushiji, Kay; Fukushima, Akio; Kubota, Hitoshi; Yuasa, Shinji; Stiles, Mark D; Grollier, Julie

    2017-07-26

    Neurons in the brain behave as nonlinear oscillators, which develop rhythmic activity and interact to process information. Taking inspiration from this behaviour to realize high-density, low-power neuromorphic computing will require very large numbers of nanoscale nonlinear oscillators. A simple estimation indicates that to fit 10 8 oscillators organized in a two-dimensional array inside a chip the size of a thumb, the lateral dimension of each oscillator must be smaller than one micrometre. However, nanoscale devices tend to be noisy and to lack the stability that is required to process data in a reliable way. For this reason, despite multiple theoretical proposals and several candidates, including memristive and superconducting oscillators, a proof of concept of neuromorphic computing using nanoscale oscillators has yet to be demonstrated. Here we show experimentally that a nanoscale spintronic oscillator (a magnetic tunnel junction) can be used to achieve spoken-digit recognition with an accuracy similar to that of state-of-the-art neural networks. We also determine the regime of magnetization dynamics that leads to the greatest performance. These results, combined with the ability of the spintronic oscillators to interact with each other, and their long lifetime and low energy consumption, open up a path to fast, parallel, on-chip computation based on networks of oscillators.

  5. Experimental Optoelectronic Associative Memory

    NASA Technical Reports Server (NTRS)

    Chao, Tien-Hsin

    1992-01-01

    Optoelectronic associative memory responds to input image by displaying one of M remembered images. Which image to display determined by optoelectronic analog computation of resemblance between input image and each remembered image. Does not rely on precomputation and storage of outer-product synapse matrix. Size of memory needed to store and process images reduced.

  6. Nanoscale integration is the next frontier for nanotechnology

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Picraux, Samuel T

    2009-01-01

    in many ways, from exploiting field-effect transistor devices and low power complementary logic to enable the electronic watch and hand calculator in the 1970's, to today's microprocessors and memories with billions of devices and a computational power not imagined a few decades ago. The manipulation of charges on a chip, the new concepts in combining devices for logic functions, and the new approaches to computation, information processing, and imaging have all emerged from Kilby and Noyce's simple concept of integrating devices on a single chip. Moving from hard to soft materials, a second more recent example of integration is the DNA microarray. These microarrays, with up to millions of elements in a planar array that can be optically read out, can simultaneously measure the expression of 10's of thousands of genes to study the effects of disease and treatment, or screen for single nucleotide polymorphisms for uses ranging from forensics to predisposition to disease. While still at an early stage, microarrays have revolutionized biosciences by providing the means to interrogate the complex genetic control of biological functions. Just as integrated circuits and microarrays have led to completely new functionalities and performance, the integration of nanoscale materials and structures is anticipated to lead to new performance and enable the design of new functionalities not previously envisioned. The fundamental questions underlying integration go beyond just complex fabrication or the engineering of known solutions; they lead to new discoveries and new science. The scientific challenges around nanoscale integration necessitate the development of new knowledge that is central to the advance of nanotechnology. To move forward one must address key science questions that arise in nanoscience integration and go beyond a single system or materials area. New science and discoveries especially await around three questions. How does one: (1) Control energy transfer and

  7. Characterization of shape and deformation of MEMS by quantitative optoelectronic metrology techniques

    NASA Astrophysics Data System (ADS)

    Furlong, Cosme; Pryputniewicz, Ryszard J.

    2002-06-01

    Recent technological trends based on miniaturization of mechanical, electro-mechanical, and photonic devices to the microscopic scale, have led to the development of microelectromechanical systems (MEMS). Effective development of MEMS components requires the synergism of advanced design, analysis, and fabrication methodologies, and also of quantitative metrology techniques for characterizing their performance, reliability, and integrity during the electronic packaging cycle. In this paper, we describe opto-electronic techniques for measuring, with sub-micrometer accuracy, shape and changes in states of deformation of MEMS strictures. With the described opto-electronic techniques, it is possible to characterize MEMS components using the display and data modes. In the display mode, interferometric information related to shape and deformation is displayed at video frame rates, providing the capability for adjusting and setting experimental conditions. In the data mode, interferometric information related to shape and deformation is recorded as high-spatial and high-digital resolution images, which are further processed to provide quantitative 3D information. Furthermore, the quantitative 3D data are exported to computer-aided design (CAD) environments and utilized for analysis and optimization of MEMS devices. Capabilities of opto- electronic techniques are illustrated with representative applications demonstrating their applicability to provide indispensable quantitative information for the effective development and optimization of MEMS devices.

  8. Surface structure, optoelectronic properties and charge transport in ZnO nanocrystal/MDMO-PPV multilayer films.

    PubMed

    Lian, Qing; Chen, Mu; Mokhtar, Muhamad Z; Wu, Shanglin; Zhu, Mingning; Whittaker, Eric; O'Brien, Paul; Saunders, Brian R

    2018-05-07

    Blends of semiconducting nanocrystals and conjugated polymers continue to attract major research interest because of their potential applications in optoelectronic devices, such as solar cells, photodetectors and light-emitting diodes. In this study we investigate the surface structure, morphological and optoelectronic properties of multilayer films constructed from ZnO nanocrystals (NCs) and poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV). The effects of layer number and ZnO concentration (C ZnO ) used on the multilayer film properties are investigated. An optimised solvent blend enabled well-controlled layers to be sequentially spin coated and the construction of multilayer films containing six ZnO NC (Z) and MDMO-PPV (M) layers (denoted as (ZM) 6 ). Contact angle data showed a strong dependence on C ZnO and indicated distinct differences in the coverage of MDMO-PPV by the ZnO NCs. UV-visible spectroscopy showed that the MDMO-PPV absorption increased linearly with the number of layers in the films and demonstrates highly tuneable light absorption. Photoluminescence spectra showed reversible quenching as well as a surprising red-shift of the MDMO-PPV emission peak. Solar cells were constructed to probe vertical photo-generated charge transport. The measurements showed that (ZM) 6 devices prepared using C ZnO = 14.0 mg mL -1 had a remarkably high open circuit voltage of ∼800 mV. The device power conversion efficiency was similar to that of a control bilayer device prepared using a much thicker MDMO-PPV layer. The results of this study provide insight into the structure-optoelectronic property relationships of new semiconducting multilayer films which should also apply to other semiconducting NC/polymer combinations.

  9. Exploring single-layered SnSe honeycomb polymorphs for optoelectronic and photovoltaic applications

    NASA Astrophysics Data System (ADS)

    Ul Haq, Bakhtiar; AlFaify, S.; Ahmed, R.; Butt, Faheem K.; Laref, A.; Shkir, Mohd.

    2018-02-01

    Single-layered tin selenide that shares the same structure with phosphorene and possesses intriguing optoelectronic properties has received great interest as a two-dimensional material beyond graphene and phosphorene. Herein, we explore the optoelectronic response of the newly discovered stable honeycomb derivatives (such as α , β , γ , δ , and ɛ ) of single-layered SnSe in the framework of density functional theory. The α , β , γ , and δ derivatives of a SnSe monolayer have been found to exhibit an indirect band gap, however, the dispersion of their band-gap edges demonstrates multiple direct band gaps at a relatively high energy. The ɛ -SnSe, however, features an intrinsic direct band gap at the high-symmetry Γ point. Their energy band gaps (0.53, 2.32, 1.52, 1.56, and 1.76 eV for α -, β -, γ -, δ -, and ɛ -SnSe, respectively), calculated at the level of the Tran-Blaha modified Becke-Johnson approach, mostly fall right in the visible range of the electromagnetic spectrum and are in good agreement with the available literature. The optical spectra of these two-dimensional (2D) SnSe polymorphs (besides β -SnSe) are highly anisotropic and possess strictly different optical band gaps along independent diagonal components. They show high absorption in the visible and UV ranges. Similarly, the reflectivity, refraction, and optical conductivities inherit strong anisotropy from the dielectric functions as well and are highly visible-UV polarized along the cartesian coordinates, showing them to be suitable for optical filters, polarizers, and shields against UV radiation. Our investigations suggest these single-layered SnSe allotropes as a promising 2D material for next-generation nanoscale optoelectronic and photovoltaic applications beyond graphene and phosphorene.

  10. Simple Optoelectronic Feedback in Microwave Oscillators

    NASA Technical Reports Server (NTRS)

    Maleki, Lute; Iltchenko, Vladimir

    2009-01-01

    A proposed method of stabilizing microwave and millimeter-wave oscillators calls for the use of feedback in optoelectronic delay lines characterized by high values of the resonance quality factor (Q). The method would extend the applicability of optoelectronic feedback beyond the previously reported class of optoelectronic oscillators that comprise two-port electronic amplifiers in closed loops with high-Q feedback circuits.

  11. Spectroscopic investigation of the chemical and electronic properties of chalcogenide materials for thin-film optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Horsley, Kimberly Anne

    Chalcogen-based materials are at the forefront of technologies for sustainable energy production. This progress has come only from decades of research, and further investigation is needed to continue improvement of these materials. For this dissertation, a number of chalcogenide systems were studied, which have applications in optoelectronic devices, such as LEDs and Photovoltaics. The systems studied include Cu(In,Ga)Se2 (CIGSe) and CuInSe 2 (CISe) thin-film absorbers, CdTe-based photovoltaic structures, and CdTe-ZnO nanocomposite materials. For each project, a sample set was prepared through collaboration with outside institutions, and a suite of spectroscopy techniques was employed to answer specific questions about the system. These techniques enabled the investigation of the chemical and electronic structure of the materials, both at the surface and towards the bulk. CdS/Cu(In,Ga)Se2 thin-films produced from the roll-to-roll, ambient pressure, Nanosolar industrial line were studied. While record-breaking efficiency cells are usually prepared in high-vacuum (HV) or ultra-high vacuum (UHV) environments, these samples demonstrate competitive mass-production efficiency without the high-cost deposition environment. We found relatively low levels of C contaminants, limited Na and Se oxidation, and a S-Se intermixing at the CdS/CIGSe interface. The surface band gap compared closely to previously investigated CIGSe thin-films deposited under vacuum, illustrating that roll-to-roll processing is a promising and less-expensive alternative for solar cell production. An alternative deposition process for CuInSe2 was also studied, in collaboration with the University of Luxembourg. CuInSe2 absorbers were prepared with varying Cu content and surface treatments to investigate the potential to produce an absorber with a Cu-rich bulk and Cu-poor surface. This is desired to combine the bulk characteristics of reduced defects and larger grains in Cu-rich films, while maintaining

  12. Organic-Inorganic Composites of Semiconductor Nanocrystals for Efficient Excitonics.

    PubMed

    Guzelturk, Burak; Demir, Hilmi Volkan

    2015-06-18

    Nanocomposites of colloidal semiconductor nanocrystals integrated into conjugated polymers are the key to soft-material hybrid optoelectronics, combining advantages of both plastics and particles. Synergic combination of the favorable properties in the hybrids of colloidal nanocrystals and conjugated polymers offers enhanced performance and new functionalities in light-generation and light-harvesting applications, where controlling and mastering the excitonic interactions at the nanoscale are essential. In this Perspective, we highlight and critically consider the excitonic interactions in the organic-inorganic nanocomposites to achieve highly efficient exciton transfer through rational design of the nanocomposites. The use of strong excitonic interactions in optoelectronic devices can trigger efficiency breakthroughs in hybrid optoelectronics.

  13. Understanding and removing surface states limiting charge transport in TiO2 nanowire arrays for enhanced optoelectronic device performance.

    PubMed

    Sheng, Xia; Chen, Liping; Xu, Tao; Zhu, Kai; Feng, Xinjian

    2016-03-01

    Charge transport within electrode materials plays a key role in determining the optoelectronic device performance. Aligned single-crystal TiO 2 nanowire arrays offer an ideal electron transport path and are expected to have higher electron mobility. Unfortunately, their transport is found not to be superior to that in nanoparticle films. Here we show that the low electron transport in rutile TiO 2 nanowires is mainly caused by surface traps in relatively deep energy levels, which cannot be removed by conventional approaches, such as oxygen annealing treatment. Moreover, we demonstrate an effective wet-chemistry approach to minimize these trap states, leading to over 20-fold enhancement in electron diffusion coefficient and 62% improvement in solar cell performance. On the basis of our results, the potential of TiO 2 NWs can be developed and well-utilized, which is significantly important for their practical applications.

  14. Unconventional Nanoscale Photoresponse and Degradation Process in Hybrid Organic-inorganic Perovskites.

    NASA Astrophysics Data System (ADS)

    Chu, Zhaodong; Yang, Mengjin; Schulz, Philip; Wu, Di; Zhu, Kai; Li, Xiaoqin; Lai, Keji

    The remarkable performance of organic-inorganic perovskite solar cells (PSCs) is challenging the dogma that solution-processed thin films are inevitably associated with inferior energy conversion efficiencies. The surprisingly low impact of polycrystallinity on the film quality highlights the unusual photo-response of intrinsic defects and grain boundaries in these materials. Here, we report the first quantitative nanoscale photoconductivity imaging on methylammonium lead triiodide (MAPbI3) thin films by microwave impedance microscopy with light stimulation. The local photoconductivity as a function of the above-gap laser power is consistent with the high carrier mobility and long lifetime of MAPbI3. The photo-response is largely uniform across grains and grain boundaries, which is direct evidence on the inherently benign nature of microstructures in the perovskite thin films. For encapsulated MAPbI3 films, the observed long-term degradation in photoconductivity begins with the disintegration of large grains due to the diffusion of water molecules through the capping layer. Our work suggests that the striking PSC performance is deeply rooted in the nanoscale optoelectronic properties of MAPbI3. We gratefully acknowledge financial support from NSF EFMA-1542747.

  15. Building devices from colloidal quantum dots.

    PubMed

    Kagan, Cherie R; Lifshitz, Efrat; Sargent, Edward H; Talapin, Dmitri V

    2016-08-26

    The continued growth of mobile and interactive computing requires devices manufactured with low-cost processes, compatible with large-area and flexible form factors, and with additional functionality. We review recent advances in the design of electronic and optoelectronic devices that use colloidal semiconductor quantum dots (QDs). The properties of materials assembled of QDs may be tailored not only by the atomic composition but also by the size, shape, and surface functionalization of the individual QDs and by the communication among these QDs. The chemical and physical properties of QD surfaces and the interfaces in QD devices are of particular importance, and these enable the solution-based fabrication of low-cost, large-area, flexible, and functional devices. We discuss challenges that must be addressed in the move to solution-processed functional optoelectronic nanomaterials. Copyright © 2016, American Association for the Advancement of Science.

  16. Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

    NASA Technical Reports Server (NTRS)

    Pavlidis, Dimitris

    1991-01-01

    The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

  17. Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

    NASA Astrophysics Data System (ADS)

    Pavlidis, Dimitris

    1991-02-01

    The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

  18. Recent Results With Coupled Opto-Electronic Oscillators

    NASA Astrophysics Data System (ADS)

    Yao, X. S.; Maleki, L.; Wu, C.; Davis, L.; Forouhar, S.

    1998-07-01

    We present experimental results of coupled opto-electronic oscillators (COEOs) constructed with a semiconductor optical-amplifier-based ring laser, a semiconductor Fabry-Perot laser, and a semiconductor colliding-pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 ps and RF signals as high in frequency as 18 GHz with a spectral purity comparable to an HP 8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.

  19. Two-Dimensional CH₃NH₃PbI₃ Perovskite: Synthesis and Optoelectronic Application.

    PubMed

    Liu, Jingying; Xue, Yunzhou; Wang, Ziyu; Xu, Zai-Quan; Zheng, Changxi; Weber, Bent; Song, Jingchao; Wang, Yusheng; Lu, Yuerui; Zhang, Yupeng; Bao, Qiaoliang

    2016-03-22

    Hybrid organic-inorganic perovskite materials have received substantial research attention due to their impressively high performance in photovoltaic devices. As one of the oldest functional materials, it is intriguing to explore the optoelectronic properties in perovskite after reducing it into a few atomic layers in which two-dimensional (2D) confinement may get involved. In this work, we report a combined solution process and vapor-phase conversion method to synthesize 2D hybrid organic-inorganic perovskite (i.e., CH3NH3PbI3) nanocrystals as thin as a single unit cell (∼1.3 nm). High-quality 2D perovskite crystals have triangle and hexagonal shapes, exhibiting tunable photoluminescence while the thickness or composition is changed. Due to the high quantum efficiency and excellent photoelectric properties in 2D perovskites, a high-performance photodetector was demonstrated, in which the current can be enhanced significantly by shining 405 and 532 nm lasers, showing photoresponsivities of 22 and 12 AW(-1) with a voltage bias of 1 V, respectively. The excellent optoelectronic properties make 2D perovskites building blocks to construct 2D heterostructures for wider optoelectronic applications.

  20. Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics.

    PubMed

    Madéo, Julien; Margiolakis, Athanasios; Zhao, Zhen-Yu; Hale, Peter J; Man, Michael K L; Zhao, Quan-Zhong; Peng, Wei; Shi, Wang-Zhou; Dani, Keshav M

    2015-07-15

    We report on the first terahertz (THz) emitter based on femtosecond-laser-ablated gallium arsenide (GaAs), demonstrating a 65% enhancement in THz emission at high optical power compared to the nonablated device. Counter-intuitively, the ablated device shows significantly lower photocurrent and carrier mobility. We understand this behavior in terms of n-doping, shorter carrier lifetime, and enhanced photoabsorption arising from the ablation process. Our results show that laser ablation allows for efficient and cost-effective optoelectronic THz devices via the manipulation of fundamental properties of materials.

  1. Resonant tunnelling diode based high speed optoelectronic transmitters

    NASA Astrophysics Data System (ADS)

    Wang, Jue; Rodrigues, G. C.; Al-Khalidi, Abdullah; Figueiredo, José M. L.; Wasige, Edward

    2017-08-01

    Resonant tunneling diode (RTD) integration with photo detector (PD) from epi-layer design shows great potential for combining terahertz (THz) RTD electronic source with high speed optical modulation. With an optimized layer structure, the RTD-PD presented in the paper shows high stationary responsivity of 5 A/W at 1310 nm wavelength. High power microwave/mm-wave RTD-PD optoelectronic oscillators are proposed. The circuitry employs two RTD-PD devices in parallel. The oscillation frequencies range from 20-44 GHz with maximum attainable power about 1 mW at 34/37/44GHz.

  2. Investigation, study and practice of optoelectronic MOOCs

    NASA Astrophysics Data System (ADS)

    Shi, Jianhua; Liu, Wei; Lei, Bing; Yao, Tianfu; Fu, Sihua

    2017-08-01

    MOOC(Massive Open Online Course) is a new teaching model that has been springing up since 2012. The typical characters are short teaching video, massive learners, flexible place and time to study, etc. Although MOOC is very popular now, opto-electronic MOOCs are not much enough to meet the need of online learners. In this paper, the phylogeny, the current situation and the characters of MOOC were described, the most famous MOOCs' websites, such as Udacity, Coursera, edX, Chinese College MOOC, xuetangx, were introduced, the opto-electronic MOOCs come from these famous MOOCs' website were investigated extensively and studied deeply, the "Application of Opto-electronic Technology MOOC" which was established by our group is introduced, and some conclusions are obtained. These conclusions can give some suggestions to the online learners who are interested in opto-electronic and the teachers who are teaching the opto-electronic curriculums. The preparation of "Opto-electronic Technology MOOC" is described in short.

  3. Semiconductor quantum wells: old technology or new device functionalities

    NASA Astrophysics Data System (ADS)

    Kolbas, R. M.; Lo, Y. C.; Hsieh, K. Y.; Lee, J. H.; Reed, F. E.; Zhang, D.; Zhang, T.

    2009-08-01

    The introduction of semiconductor quantum wells in the 1970s created a revolution in optoelectronic devices. A large fraction of today's lasers and light emitting diodes are based on quantum wells. It has been more than 30 years but novel ideas and new device functions have recently been demonstrated using quantum well heterostructures. This paper provides a brief overview of the subject and then focuses on the physics of quantum wells that the lead author believes holds the key to new device functionalities. The data and figures contained within are not new. They have been assembled from 30 years of work. They are presented to convey the story of why quantum wells continue to fuel the engine that drives the semiconductor optoelectronic business. My apologies in advance to my students and co-workers that contributed so much that could not be covered in such a short manuscript. The explanations provided are based on the simplest models possible rather than the very sophisticated mathematical models that have evolved over many years. The intended readers are those involved with semiconductor optoelectronic devices and are interested in new device possibilities.

  4. Selective nanoscale growth of lattice mismatched materials

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Lee, Seung-Chang; Brueck, Steven R. J.

    Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a composite film including one or more substantially-single-particle-thick nanoparticle layers can be deposited over a substrate as a nanoscale selective growth mask for epitaxially growing lattice-mismatched materials over the substrate.

  5. Fast terahertz optoelectronic amplitude modulator based on plasmonic metamaterial antenna arrays and graphene

    NASA Astrophysics Data System (ADS)

    Jessop, David S.; Sol, Christian W. O.; Xiao, Long; Kindness, Stephen J.; Braeuninger-Weimer, Philipp; Lin, Hungyen; Griffiths, Jonathan P.; Ren, Yuan; Kamboj, Varun S.; Hofmann, Stephan; Zeitler, J. Axel; Beere, Harvey E.; Ritchie, David A.; Degl'Innocenti, Riccardo

    2016-02-01

    The growing interest in terahertz (THz) technologies in recent years has seen a wide range of demonstrated applications, spanning from security screening, non-destructive testing, gas sensing, to biomedical imaging and communication. Communication with THz radiation offers the advantage of much higher bandwidths than currently available, in an unallocated spectrum. For this to be realized, optoelectronic components capable of manipulating THz radiation at high speeds and high signal-to-noise ratios must be developed. In this work we demonstrate a room temperature frequency dependent optoelectronic amplitude modulator working at around 2 THz, which incorporates graphene as the tuning medium. The architecture of the modulator is an array of plasmonic dipole antennas surrounded by graphene. By electrostatically doping the graphene via a back gate electrode, the reflection characteristics of the modulator are modified. The modulator is electrically characterized to determine the graphene conductivity and optically characterization, by THz time-domain spectroscopy and a single-mode 2 THz quantum cascade laser, to determine the optical modulation depth and cut-off frequency. A maximum optical modulation depth of ~ 30% is estimated and is found to be most (least) sensitive when the electrical modulation is centered at the point of maximum (minimum) differential resistivity of the graphene. A 3 dB cut-off frequency > 5 MHz, limited only by the area of graphene on the device, is reported. The results agree well with theoretical calculations and numerical simulations, and demonstrate the first steps towards ultra-fast, graphene based THz optoelectronic devices.

  6. Many-body Effect, Carrier Mobility, and Device Performance of Hexagonal Arsenene and Antimonene

    NASA Astrophysics Data System (ADS)

    Wang, Yangyang; Ye, Meng; Quhe, Ruge; Huang, Pu; Lu, Jing

    Monolayer (ML) arsenene and antimonene, as new members of group V-enes, have attracted great interest. Experimentally, multilayer arsenene/antimonene nanoribbons have been fabricated on an InAs/InSb substrate. ML and multilayer antimonene have been isolated by mechanical exfoliation and liquid-phase exfoliation. More importantly, they are highly stable under ambient condition. Together with their wide band gaps predicted by the HSE theory, arsenene and antimonene are very attractive for nanoscale optoelectronic and electronic devices. We investigate the many-body effect and device performance of ML hexagonal arsenene and antimonene using ab initio GW, GW plus Bethe-Salpeter equation and nonequilibrium Green's function approach. The quasi-particle and optical band gaps are calculated in ML arsenene and antimonene for the first time. Low (21/66 cm2/V .s for electron/hole) and moderate carrier mobilities (150/510 cm2/V .s for electron/hole) are obtained, for arsenene and antimonene, respectively. Quantum transport simulation reveals that the performance limits of sub-10 nm ML arsenene and antimonene FETs can satisfy both low power and high performance requirements of the ITRS target in the next decade. National Natural Science Foundation of China (No. 11274016/11474012/11674005/11274233).

  7. Modeling of Nano-Scale Transistors and Memory Devices for Low Power Applications

    NASA Astrophysics Data System (ADS)

    Cao, Xi

    As the featuring size of transistors scaled down to sub-20 nm, the continuous scaling of power has become one of the main challenges of the semiconductor industry. The power issue is raised by the barely scalable supply voltage and a limitation on the subthreshold swing (SS) of conventional metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, self-consistent quantum transport device simulators are developed to examine the nanoscale transistors based on black phosphorus (BP) materials. The scaling limit of double-gated BP MOSFETs is assessed. To reduce the SS below the thermionic limit for ultra-steep switching, tunnel FETs (TFETs) and vertical ballistic impact ionization FETs based on BP and its heterojunctions are investigated. Furthermore, the ferroelectric tunneling junction (FTJ) is modeled and examined for potential low power memory applications. For BP MOSFETs, the device physics at the ultimate scaling limit are examined. The performance of monolayer BP MOSFETs is projected to sub-10 nm and compared with the International Technology Roadmap for Semiconductors (ITRS) requirements. And the interplay of quantum mechanical effects and the highly anisotropic bandstructure of BP at this scale is investigated. By choice of layer number and crystalline direction, BP materials can offer a range of bandgap and effective mass values, which is attractive for TFET applications. Therefore, scaling behaviors of BP TFETs near and below the 10 nm scale are studied. The gate oxide thickness scaling and the effect of high-k dielectric are compared between the TFETs and the MOSFETs. For the TFETs with the gate lengths beyond 10 nm and at the sub-10 nm scale, the direct-source-to-drain tunneling issues are evaluated, and different strategies to achieve ultra-steep switching are specified. In a sub-10 nm graphene-BP-graphene heterojunction transistor, the sharp turnon behavior was observed, under a small source-drain bias of 0.1 V. The fast switch is

  8. Origin of high carrier mobility and low residual stress in RF superimposed DC sputtered Al doped ZnO thin film for next generation flexible devices

    NASA Astrophysics Data System (ADS)

    Kumar, Naveen; Dubey, Ashish; Bahrami, Behzad; Venkatesan, S.; Qiao, Qiquan; Kumar, Mukesh

    2018-04-01

    In this work, the energy and flux of high energetic ions were controlled by RF superimposed DC sputtering process to increase the grain size and suppress grain boundary potential with minimum residual stress in Al doped ZnO (AZO) thin film. AZO thin films were deposited at different RF/(RF + DC) ratios by keeping total power same and were investigated for their electrical, optical, structural and nanoscale grain boundaries potential. All AZO thin film showed high crystallinity and orientation along (002) with peak shift as RF/(RF + DC) ratio increased from 0.0, pure DC, to 1.0, pure RF. This peak shift was correlated with high residual stress in as-grown thin film. AZO thin film grown at mixed RF/(RF + DC) of 0.75 showed high electron mobility, low residual stress and large crystallite size in comparison to other AZO thin films. The nanoscale grain boundary potential was mapped using Kelvin Probe Force Microscopy in all AZO thin film and it was observed that carrier mobility is controlled not only by grains size but also by grain boundary potential. The XPS analysis confirms the variation in oxygen vacancies and zinc interstitials which explain the origin of low grain boundaries potential and high carrier mobility in AZO thin film deposited at 0.75 RF/(RF + DC) ratio. This study proposes a new way to control the grain size and grain boundary potential to further tune the optoelectronic-mechanical properties of AZO thin films for next generation flexible and optoelectronic devices.

  9. Electrically controlled lens and prism using nanoscale polymer-dispersed and polymer-networked liquid crystals

    NASA Astrophysics Data System (ADS)

    Fan, Yun Hsing; Ren, Hongwen; Wu, Shin Tson

    2004-05-01

    Inhomogeneous nanoscale polymer-dispersed liquid crystal (PDLC) devices having gradient nanoscale droplet distribution were fabricated. This gradient refractive index nanoscale (GRIN) PDLC film was obtained by exposing the LC/ monomer with a uniform ultraviolet (UV) light through a patterned photomask. The monomer and LC were mixed at 70: 30 wt% ratio. The area exposed to a weaker UV intensity would produce a larger droplet size, and vice versa. Owing to the nanoscale LC droplets involved, the GRIN PDLC devices are highly transparent in the whole visible region. The gradient refractive index profile can be used as switchable prism gratings, Fresnel lens, and positive and negative lenses with tunable focal lengths. Such a GRIN PDLC device is a broadband device and independent of light polarization. The diffraction efficiency of the lens is controllable by the applied voltage. The major advantages of the GRIN PDLC devices are in simple fabrication process, polarization-independent, and fast switching speed, although the required driving voltage is higher than 100 Vrms. To lower the driving voltage, the technique of polymer-networked liquid crystal (PNLC) has been developed. The PNLC was also produced by exposing the LC/monomer mixture with a uniform UV light through a patterned photomask. However, the monomer concentration in PNLC is only around 2-5 wt%. The formed PNLC structure exhibits a gradient polymer network distribution. The LC in the regions stabilized by a higher polymer concentration exhibits a higher threshold voltage. By using this technique, prism grating, tunable electronic lens and Fresnel lens have been demonstrated. The driving voltage is around 10 Vrms. A drawback of this kind of device is polarization dependence. To overcome the polarization dependence, stacking two orthogonal homogeneous PNLC lens is considered.

  10. Synthesis, dynamics and photophysics of nanoscale systems

    NASA Astrophysics Data System (ADS)

    Mirkovic, Tihana

    The emerging field of nanotechnology, which spans diverse areas such as nanoelectronics, medicine, chemical and pharmaceutical industries, biotechnology and computation, focuses on the development of devices whose improved performance is based on the utilization of self-assembled nanoscale components exhibiting unique properties owing to their miniaturized dimensions. The first phase in the conception of such multifunctional devices based on integrated technologies requires the study of basic principles behind the functional mechanism of nanoscale components, which could originate from individual nanoobjects or result as a collective behaviour of miniaturized unit structures. The comprehensive studies presented in this thesis encompass the mechanical, dynamical and photophysical aspects of three nanoscale systems. A newly developed europium sulfide nanocrystalline material is introduced. Advances in synthetic methods allowed for shape control of surface-functionalized EuS nanocrystals and the fabrication of multifunctional EuS-CdSe hybrid particles, whose unique structural and optical properties hold promise as useful attributes of integrated materials in developing technologies. A comprehensive study based on a new class of multifunctional nanomaterials, derived from the basic unit of barcoded metal nanorods is presented. Their chemical composition affords them the ability to undergo autonomous motion in the presence of a suitable fuel. The nature of their chemically powered self-propulsion locomotion was investigated, and plausible mechanisms for various motility modes were presented. Furthermore functionalization of striped metallic nanorods has been realized through the incorporation of chemically controlled flexible hinges displaying bendable properties. The structural aspect of the light harvesting machinery of a photosynthetic cryptophyte alga, Rhodomonas CS24, and the mobility of the antenna protein, PE545, in vivo were investigated. Information obtained

  11. Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides

    PubMed Central

    Gong, Chuanhui; Zhang, Yuxi; Chen, Wei; Lei, Tianyu; Pu, Junru; Dai, Liping; Wu, Chunyang; Li, Liang

    2017-01-01

    Abstract With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high‐performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe2 and ReX2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low‐symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field‐effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high‐performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed. PMID:29270337

  12. Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides.

    PubMed

    Gong, Chuanhui; Zhang, Yuxi; Chen, Wei; Chu, Junwei; Lei, Tianyu; Pu, Junru; Dai, Liping; Wu, Chunyang; Cheng, Yuhua; Zhai, Tianyou; Li, Liang; Xiong, Jie

    2017-12-01

    With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high-performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe 2 and ReX 2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low-symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field-effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high-performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed.

  13. Pseudo-One-Dimensional Magnonic Crystals for High-Frequency Nanoscale Devices

    NASA Astrophysics Data System (ADS)

    Banerjee, Chandrima; Choudhury, Samiran; Sinha, Jaivardhan; Barman, Anjan

    2017-07-01

    The synthetic magnonic crystals (i.e., periodic composites consisting of different magnetic materials) form one fascinating class of emerging research field, which aims to command the process and flow of information by means of spin waves, such as in magnonic waveguides. One of the intriguing features of magnonic crystals is the presence and tunability of band gaps in the spin-wave spectrum, where the high attenuation of the frequency bands can be utilized for frequency-dependent control on the spin waves. However, to find a feasible way of band tuning in terms of a realistic integrated device is still a challenge. Here, we introduce an array of asymmetric saw-tooth-shaped width-modulated nanoscale ferromagnetic waveguides forming a pseudo-one-dimensional magnonic crystal. The frequency dispersion of collective modes measured by the Brillouin light-scattering technique is compared with the band diagram obtained by numerically solving the eigenvalue problem derived from the linearized Landau-Lifshitz magnetic torque equation. We find that the magnonic band-gap width, position, and the slope of dispersion curves are controllable by changing the angle between the spin-wave propagation channel and the magnetic field. The calculated profiles of the dynamic magnetization reveal that the corrugation at the lateral boundary of the waveguide effectively engineers the edge modes, which forms the basis of the interactive control in magnonic circuits. The results represent a prospective direction towards managing the internal field distribution as well as the dispersion properties, which find potential applications in dynamic spin-wave filters and magnonic waveguides in the gigahertz frequency range.

  14. Improving Neural Recording Technology at the Nanoscale

    NASA Astrophysics Data System (ADS)

    Ferguson, John Eric

    Neural recording electrodes are widely used to study normal brain function (e.g., learning, memory, and sensation) and abnormal brain function (e.g., epilepsy, addiction, and depression) and to interface with the nervous system for neuroprosthetics. With a deep understanding of the electrode interface at the nanoscale and the use of novel nanofabrication processes, neural recording electrodes can be designed that surpass previous limits and enable new applications. In this thesis, I will discuss three projects. In the first project, we created an ultralow-impedance electrode coating by controlling the nanoscale texture of electrode surfaces. In the second project, we developed a novel nanowire electrode for long-term intracellular recordings. In the third project, we created a means of wirelessly communicating with ultra-miniature, implantable neural recording devices. The techniques developed for these projects offer significant improvements in the quality of neural recordings. They can also open the door to new types of experiments and medical devices, which can lead to a better understanding of the brain and can enable novel and improved tools for clinical applications.

  15. Injectable, cellular-scale optoelectronics with applications for wireless optogenetics.

    PubMed

    Kim, Tae-il; McCall, Jordan G; Jung, Yei Hwan; Huang, Xian; Siuda, Edward R; Li, Yuhang; Song, Jizhou; Song, Young Min; Pao, Hsuan An; Kim, Rak-Hwan; Lu, Chaofeng; Lee, Sung Dan; Song, Il-Sun; Shin, Gunchul; Al-Hasani, Ream; Kim, Stanley; Tan, Meng Peun; Huang, Yonggang; Omenetto, Fiorenzo G; Rogers, John A; Bruchas, Michael R

    2013-04-12

    Successful integration of advanced semiconductor devices with biological systems will accelerate basic scientific discoveries and their translation into clinical technologies. In neuroscience generally, and in optogenetics in particular, the ability to insert light sources, detectors, sensors, and other components into precise locations of the deep brain yields versatile and important capabilities. Here, we introduce an injectable class of cellular-scale optoelectronics that offers such features, with examples of unmatched operational modes in optogenetics, including completely wireless and programmed complex behavioral control over freely moving animals. The ability of these ultrathin, mechanically compliant, biocompatible devices to afford minimally invasive operation in the soft tissues of the mammalian brain foreshadow applications in other organ systems, with potential for broad utility in biomedical science and engineering.

  16. Hydrogen-Bonded Organic Semiconductor Micro- And Nanocrystals: From Colloidal Syntheses to (Opto-)Electronic Devices

    PubMed Central

    2014-01-01

    Organic pigments such as indigos, quinacridones, and phthalocyanines are widely produced industrially as colorants for everyday products as various as cosmetics and printing inks. Herein we introduce a general procedure to transform commercially available insoluble microcrystalline pigment powders into colloidal solutions of variously sized and shaped semiconductor micro- and nanocrystals. The synthesis is based on the transformation of the pigments into soluble dyes by introducing transient protecting groups on the secondary amine moieties, followed by controlled deprotection in solution. Three deprotection methods are demonstrated: thermal cleavage, acid-catalyzed deprotection, and amine-induced deprotection. During these processes, ligands are introduced to afford colloidal stability and to provide dedicated surface functionality and for size and shape control. The resulting micro- and nanocrystals exhibit a wide range of optical absorption and photoluminescence over spectral regions from the visible to the near-infrared. Due to excellent colloidal solubility offered by the ligands, the achieved organic nanocrystals are suitable for solution processing of (opto)electronic devices. As examples, phthalocyanine nanowire transistors as well as quinacridone nanocrystal photodetectors, with photoresponsivity values by far outperforming those of vacuum deposited reference samples, are demonstrated. The high responsivity is enabled by photoinduced charge transfer between the nanocrystals and the directly attached electron-accepting vitamin B2 ligands. The semiconducting nanocrystals described here offer a cheap, nontoxic, and environmentally friendly alternative to inorganic nanocrystals as well as a new paradigm for obtaining organic semiconductor materials from commercial colorants. PMID:25253644

  17. Systems engineering at the nanoscale

    NASA Astrophysics Data System (ADS)

    Benkoski, Jason J.; Breidenich, Jennifer L.; Wei, Michael C.; Clatterbaughi, Guy V.; Keng, Pei Yuin; Pyun, Jeffrey

    2012-06-01

    Nanomaterials have provided some of the greatest leaps in technology over the past twenty years, but their relatively early stage of maturity presents challenges for their incorporation into engineered systems. Perhaps even more challenging is the fact that the underlying physics at the nanoscale often run counter to our physical intuition. The current state of nanotechnology today includes nanoscale materials and devices developed to function as components of systems, as well as theoretical visions for "nanosystems," which are systems in which all components are based on nanotechnology. Although examples will be given to show that nanomaterials have indeed matured into applications in medical, space, and military systems, no complete nanosystem has yet been realized. This discussion will therefore focus on systems in which nanotechnology plays a central role. Using self-assembled magnetic artificial cilia as an example, we will discuss how systems engineering concepts apply to nanotechnology.

  18. Strategies for Controlled Placement of Nanoscale Building Blocks

    PubMed Central

    2007-01-01

    The capability of placing individual nanoscale building blocks on exact substrate locations in a controlled manner is one of the key requirements to realize future electronic, optical, and magnetic devices and sensors that are composed of such blocks. This article reviews some important advances in the strategies for controlled placement of nanoscale building blocks. In particular, we will overview template assisted placement that utilizes physical, molecular, or electrostatic templates, DNA-programmed assembly, placement using dielectrophoresis, approaches for non-close-packed assembly of spherical particles, and recent development of focused placement schemes including electrostatic funneling, focused placement via molecular gradient patterns, electrodynamic focusing of charged aerosols, and others. PMID:21794185

  19. A Theoretical Review on Interfacial Thermal Transport at the Nanoscale.

    PubMed

    Zhang, Ping; Yuan, Peng; Jiang, Xiong; Zhai, Siping; Zeng, Jianhua; Xian, Yaoqi; Qin, Hongbo; Yang, Daoguo

    2018-01-01

    With the development of energy science and electronic technology, interfacial thermal transport has become a key issue for nanoelectronics, nanocomposites, energy transmission, and conservation, etc. The application of thermal interfacial materials and other physical methods can reliably improve the contact between joined surfaces and enhance interfacial thermal transport at the macroscale. With the growing importance of thermal management in micro/nanoscale devices, controlling and tuning the interfacial thermal resistance (ITR) at the nanoscale is an urgent task. This Review examines nanoscale interfacial thermal transport mainly from a theoretical perspective. Traditional theoretical models, multiscale models, and atomistic methodologies for predicting ITR are introduced. Based on the analysis and summary of the factors that influence ITR, new methods to control and reduce ITR at the nanoscale are described in detail. Furthermore, the challenges facing interfacial thermal management and the further progress required in this field are discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Feature issue introduction: halide perovskites for optoelectronics.

    PubMed

    White, Thomas P; Deleporte, Emmanuelle; Sum, Tze-Chien

    2018-01-22

    This joint Optics Express and Optical Materials Express feature issue presents a collection of nine papers on the topic of halide perovskites for optoelectronics. Perovskite materials have attracted significant attention over the past four years, initially for their outstanding performance in thin film solar cells, but more recently for applications in light-emitting devices (LEDs and lasers), photodetectors and nonlinear optics. At the same time, there is still much more to learn about the fundamental properties of these materials, and how these depend on composition, processing, and exposure to the environment. This feature issue provides a snapshot of some of the latest research in this rapidly-evolving multidisciplinary field.

  1. Nickel nanowires mesh fabricated by ion beam irradiation-induced nanoscale welding for transparent conducting electrodes

    NASA Astrophysics Data System (ADS)

    Honey, S.; Ahmad, I.; Madhuku, M.; Naseem, S.; Maaza, M.; Kennedy, J. V.

    2017-07-01

    In this report, random nickel nanowires (Ni-NWs) meshes are fabricated by ions beam irradiation-induced nanoscale welding of NWs on intersecting positions. Ni-NWs are exposed to beam of 50 KeV Argon (Ar+) ions at various fluencies in the range ~1015 ions cm-2 to 1016 ions cm-2 at room temperature. Ni-NWs are welded due to accumulation of Ar+ ions beam irradiation-induced sputtered atoms on crossing positions. Ar+ ions irradiated Ni-NWs meshes are optically transparent and optical transparency is enhanced with increase in beam fluence of Ar+ ions. Ar+ ions beam irradiation-induced welded and optically transparent mesh is then exposed to 2.75 MeV hydrogen (H+) ions at fluencies 1  ×  1015 ions cm-2, 3  ×  1015 ions cm-2 and 1  ×  1016 ions cm-2 at room temperature. MeV H+ ions irradiation-induced local heat cause melting and fusion of NWs on intersecting points and eventually lead to reduce contact resistance between Ni-NWs. Electrical conductivity is enhanced with increase in beam fluence of H+ ions. These welded highly transparent and electrically conductive Ni-NWs meshes can be employed as transparent conducting electrodes in optoelectronic devices.

  2. Nanoscale Ge fin etching using F- and Cl-based etchants for Ge-based multi-gate devices

    NASA Astrophysics Data System (ADS)

    Zhang, Bingxin; An, Xia; Li, Ming; Hao, Peilin; Zhang, Xing; Huang, Ru

    2018-04-01

    In this paper, nanoscale germanium (Ge) fin etching with inductively coupled plasma equipment with SF6/CHF3/Ar and Cl2/BCl3/Ar gas mixes are experimentally demonstrated. The impact of the gas ratio on etching induced Ge surface flatness, etch rate and sidewall steepness are comprehensively investigated and compared for these two kinds of etchants and the optimized gas ratio is provided. By using silicon oxide as a hard mask, nanoscale Ge fin with a flat surface and sharp sidewall is experimentally illustrated, which indicates great potential for use in nanoscale Ge-based multi-gate MOSFETs.

  3. Nanoscale characterization of GaN/InGaN multiple quantum wells on GaN nanorods by photoluminescence spectroscopy

    NASA Astrophysics Data System (ADS)

    Chen, Weijian; Wen, Xiaoming; Latzel, Michael; Yang, Jianfeng; Huang, Shujuan; Shrestha, Santosh; Patterson, Robert; Christiansen, Silke; Conibeer, Gavin

    2017-02-01

    GaN/InGaN multiple quantum wells (MQW) and GaN nanorods have been widely studied as a candidate material for high-performance light emitting diodes. In this study, GaN/InGaN MQW on top of GaN nanorods are characterized in nanoscale using confocal microscopy associated with photoluminescence spectroscopy, including steady-state PL, timeresolved PL and fluorescence lifetime imaging (FLIM). Nanorods are fabricated by etching planar GaN/InGaN MQWs on top of a GaN layer on a c-plane sapphire substrate. Photoluminescence efficiency from the GaN/InGaN nanorods is evidently higher than that of the planar structure, indicating the emission improvement. Time-resolved photoluminescence (TRPL) prove that surface defects on GaN nanorod sidewalls have a strong influence on the luminescence property of the GaN/InGaN MWQs. Such surface defects can be eliminated by proper surface passivation. Moreover, densely packed nanorod array and sparsely standing nanorods have been studied for better understanding the individual property and collective effects from adjacent nanorods. The combination of the optical characterization techniques guides optoelectronic materials and device fabrication.

  4. Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

    PubMed Central

    Tasi, Chi-Tsung; Wang, Wei-Kai; Tsai, Tsung-Yen; Huang, Shih-Yung; Horng, Ray-Hua; Wuu, Dong-Sing

    2017-01-01

    In this study, a 3-μm-thick AlGaN film with an Al mole fraction of 10% was grown on a nanoscale-patterned sapphire substrate (NPSS) using hydride vapor phase epitaxy (HVPE). The growth mechanism, crystallization, and surface morphology of the epilayers were examined using X-ray diffraction, transmission electron microscopy (TEM), and scanning electron microscopy at various times in the growth process. The screw threading dislocation (TD) density of AlGaN-on-NPSS can improve to 1–2 × 109 cm−2, which is significantly lower than that of the sample grown on a conventional planar sapphire substrate (7 × 109 cm−2). TEM analysis indicated that these TDs do not subsequently propagate to the surface of the overgrown AlGaN layer, but bend or change directions in the region above the voids within the side faces of the patterned substrates, possibly because of the internal stress-relaxed morphologies of the AlGaN film. Hence, the laterally overgrown AlGaN films were obtained by HVPE, which can serve as a template for the growth of ultraviolet III-nitride optoelectronic devices. PMID:28772961

  5. Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy.

    PubMed

    Tasi, Chi-Tsung; Wang, Wei-Kai; Tsai, Tsung-Yen; Huang, Shih-Yung; Horng, Ray-Hua; Wuu, Dong-Sing

    2017-05-31

    In this study, a 3-μm-thick AlGaN film with an Al mole fraction of 10% was grown on a nanoscale-patterned sapphire substrate (NPSS) using hydride vapor phase epitaxy (HVPE). The growth mechanism, crystallization, and surface morphology of the epilayers were examined using X-ray diffraction, transmission electron microscopy (TEM), and scanning electron microscopy at various times in the growth process. The screw threading dislocation (TD) density of AlGaN-on-NPSS can improve to 1-2 × 10⁸ cm -2 , which is significantly lower than that of the sample grown on a conventional planar sapphire substrate (7 × 10⁸ cm -2 ). TEM analysis indicated that these TDs do not subsequently propagate to the surface of the overgrown AlGaN layer, but bend or change directions in the region above the voids within the side faces of the patterned substrates, possibly because of the internal stress-relaxed morphologies of the AlGaN film. Hence, the laterally overgrown AlGaN films were obtained by HVPE, which can serve as a template for the growth of ultraviolet III-nitride optoelectronic devices.

  6. Constructing biomolecular motor-powered hybrid NEMS devices

    NASA Astrophysics Data System (ADS)

    Bachand, George D.; Montemagno, Carlo D.

    1999-10-01

    The recognition of many enzymes as nanoscale molecular motors has allowed for the potential creation of hybrid organic/inorganic nano-electro-mechanical (NEMS) devices. The long-range goal of this research is the integration of F1-ATPase with NEMS to produce useful nanoscale devices. A thermostable F1-ATPase coding sequence has been isolated, cloned, and engineered for high-level protein expression. Precise positioning, spacing, and orientation of single F1-ATPase molecules were achieved using patterned nickel arrays. An efficient, accurate, and adaptable assay was developed to assess the performance of single F1- ATPase motors, and confirmed a three-step mechanism of (gamma) subunit rotation during ATP hydrolysis. Further evaluation of the bioengineering and biophysical properties of F1-ATPase currently are being conducted, as well as the construction of an F1-ATPase-powered, hybrid NEMS device. The evolution of this technology will permit the creation of novel classes of nanoscale, hybrid devices.

  7. Highly repeatable nanoscale phase coexistence in vanadium dioxide films

    NASA Astrophysics Data System (ADS)

    Huffman, T. J.; Lahneman, D. J.; Wang, S. L.; Slusar, T.; Kim, Bong-Jun; Kim, Hyun-Tak; Qazilbash, M. M.

    2018-02-01

    It is generally believed that in first-order phase transitions in materials with imperfections, the formation of phase domains must be affected to some extent by stochastic (probabilistic) processes. The stochasticity would lead to unreliable performance in nanoscale devices that have the potential to exploit the transformation of physical properties in a phase transition. Here we show that stochasticity at nanometer length scales is completely suppressed in the thermally driven metal-insulator transition (MIT) in sputtered vanadium dioxide (V O2 ) films. The nucleation and growth of domain patterns of metallic and insulating phases occur in a strikingly reproducible way. The completely deterministic nature of domain formation and growth in films with imperfections is a fundamental and unexpected finding about the kinetics of this material. Moreover, it opens the door for realizing reliable nanoscale devices based on the MIT in V O2 and similar phase-change materials.

  8. Nanoscale neuroelectronic interface based on open-ended nanocoax arrays

    NASA Astrophysics Data System (ADS)

    Naughton, Jeffrey R.; Rizal, Binod; Burns, Michael J.; Yeom, Jee; Heyse, Shannon; Archibald, Michelle; Shepard, Stephen; McMahon, Gregory; Chiles, Thomas C.; Naughton, Michael J.

    2012-02-01

    We describe the development of a nanoscale neuroelectronic array with submicron pixelation for recording and stimulation with high spatial resolution. The device is composed of an array of nanoscale coaxial electrodes, either network- or individually-configured. As a neuroelectronic interface, it will employ noninvasive real-time capacitive coupling to the plasma membrane with potential for extracellular recording of intra- and interneural synaptic activity, with one target being precision measurement of electrical signals associated with induced and spontaneous synapse firing in pre- and post-synaptic somata. Subarrays or even individual pixels can also be actuated for precisely-localized stimulation. We report initial results from measurements using the rat adrenal pheochromocytoma PC12 cell line, which terminally differentiates in response to nerve growth factor, as well as SH-SY5Y neuroblastoma cells in response to retinoic acid, characterizing the basic performance of the fabricated device.

  9. 2D Quantum Transport Modeling in Nanoscale MOSFETs

    NASA Technical Reports Server (NTRS)

    Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, Bryan

    2001-01-01

    With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density- gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Quantum simulations are focused on MIT 25, 50 and 90 nm "well- tempered" MOSFETs and compared to classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are quantitatively consistent with I D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and sub-threshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

  10. Microfluidic optoelectronic sensor for salivary diagnostics of stomach cancer.

    PubMed

    Zilberman, Yael; Sonkusale, Sameer R

    2015-05-15

    We present a microfluidic optoelectronic sensor for saliva diagnostics with a potential application for non-invasive early diagnosis of stomach cancer. Stomach cancer is the second most common cause of cancer-related deaths in the world. The primary identified cause is infection by a gram-negative bacterium Helicobacter pylori. These bacteria secrete the enzyme urease that converts urea into carbon dioxide (CO2) and ammonia (NH3), leading to their elevated levels in breath and body fluids. The proposed optoelectronic sensor will detect clinically relevant levels of CO2 and NH3 in saliva that can potentially be used for early diagnosis of stomach cancer. The sensor is composed of the embedded in a microfluidic device array of microwells filled with ion-exchange polymer microbeads doped with various organic dyes. The optical response of this unique highly diverse sensor is monitored over a broad spectrum, which provides a platform for cross-reactive sensitivity and allows detection of CO2 and NH3 in saliva at ppm levels. Copyright © 2014 Elsevier B.V. All rights reserved.

  11. Flexible manufacturing for photonics device assembly

    NASA Technical Reports Server (NTRS)

    Lu, Shin-Yee; Pocha, Michael D.; Strand, Oliver T.; Young, K. David

    1994-01-01

    The assembly of photonics devices such as laser diodes, optical modulators, and opto-electronics multi-chip modules (OEMCM), usually requires the placement of micron size devices such as laser diodes, and sub-micron precision attachment between optical fibers and diodes or waveguide modulators (usually referred to as pigtailing). This is a very labor intensive process. Studies done by the opto-electronics (OE) industry have shown that 95 percent of the cost of a pigtailed photonic device is due to the use of manual alignment and bonding techniques, which is the current practice in industry. At Lawrence Livermore National Laboratory, we are working to reduce the cost of packaging OE devices through the use of automation. Our efforts are concentrated on several areas that are directly related to an automated process. This paper will focus on our progress in two of those areas, in particular, an automated fiber pigtailing machine and silicon micro-technology compatible with an automated process.

  12. Recent results with the coupled opto-electronic oscillator

    NASA Astrophysics Data System (ADS)

    Yao, X. S.; Maleki, Lute; Wu, Chi; Davis, Lawrence J.; Forouhar, Siamak

    1998-11-01

    We present experimental results of coupled opto-electronic oscillators (COEO) constructed with a semiconductor optical amplifier based ring laser, a semiconductor Fabry-Perot laser, and a semiconductor colliding pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 picoseconds and RF signals as high in frequency as 18 GHz with a spectral purity comparable with a HP8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.

  13. A Thermal Diode Based on Nanoscale Thermal Radiation.

    PubMed

    Fiorino, Anthony; Thompson, Dakotah; Zhu, Linxiao; Mittapally, Rohith; Biehs, Svend-Age; Bezencenet, Odile; El-Bondry, Nadia; Bansropun, Shailendra; Ben-Abdallah, Philippe; Meyhofer, Edgar; Reddy, Pramod

    2018-05-23

    In this work we demonstrate thermal rectification at the nanoscale between doped Si and VO 2 surfaces. Specifically, we show that the metal-insulator transition of VO 2 makes it possible to achieve large differences in the heat flow between Si and VO 2 when the direction of the temperature gradient is reversed. We further show that this rectification increases at nanoscale separations, with a maximum rectification coefficient exceeding 50% at ∼140 nm gaps and a temperature difference of 70 K. Our modeling indicates that this high rectification coefficient arises due to broadband enhancement of heat transfer between metallic VO 2 and doped Si surfaces, as compared to narrower-band exchange that occurs when VO 2 is in its insulating state. This work demonstrates the feasibility of accomplishing near-field-based rectification of heat, which is a key component for creating nanoscale radiation-based information processing devices and thermal management approaches.

  14. Implantable optoelectronic probes for in vivo optogenetics.

    PubMed

    Iseri, Ege; Kuzum, Duygu

    2017-06-01

    More than a decade has passed since optics and genetics came together and lead to the emerging technologies of optogenetics. The advent of light-sensitive opsins made it possible to optically trigger the neurons into activation or inhibition by using visible light. The importance of spatiotemporally isolating a segment of a neural network and controlling nervous signaling in a precise manner has driven neuroscience researchers and engineers to invest great efforts in designing high precision in vivo implantable devices. These efforts have focused on delivery of sufficient power to deep brain regions, while monitoring neural activity with high resolution and fidelity. In this review, we report the progress made in the field of hybrid optoelectronic neural interfaces that combine optical stimulation with electrophysiological recordings. Different approaches that incorporate optical or electrical components on implantable devices are discussed in detail. Advantages of various different designs as well as practical and fundamental limitations are summarized to illuminate the future of neurotechnology development.

  15. Implantable optoelectronic probes for in vivo optogenetics

    NASA Astrophysics Data System (ADS)

    Iseri, Ege; Kuzum, Duygu

    2017-06-01

    More than a decade has passed since optics and genetics came together and lead to the emerging technologies of optogenetics. The advent of light-sensitive opsins made it possible to optically trigger the neurons into activation or inhibition by using visible light. The importance of spatiotemporally isolating a segment of a neural network and controlling nervous signaling in a precise manner has driven neuroscience researchers and engineers to invest great efforts in designing high precision in vivo implantable devices. These efforts have focused on delivery of sufficient power to deep brain regions, while monitoring neural activity with high resolution and fidelity. In this review, we report the progress made in the field of hybrid optoelectronic neural interfaces that combine optical stimulation with electrophysiological recordings. Different approaches that incorporate optical or electrical components on implantable devices are discussed in detail. Advantages of various different designs as well as practical and fundamental limitations are summarized to illuminate the future of neurotechnology development.

  16. Two-dimensional metamaterial transparent metal electrodes for infrared optoelectronics.

    PubMed

    Clark, Samuel M; Han, Sang Eon

    2014-06-15

    We examine the optical properties of two-dimensionally nanostructured metals in the metamaterial regime for infrared applications. Compared with straight nanowires and nanogrids, serpentine structures exhibit much lower optical losses of less than 7% even at a large metal area fraction of 0.3. The low loss is primarily due to a small effective conductivity of the meandering structures, and self-inductance plays a modest role in reducing losses in these structures. The high transparency at a large metal area coverage would be useful for transparent electrodes in optoelectronic devices.

  17. Coupled opto-electronic oscillator

    NASA Technical Reports Server (NTRS)

    Yao, X. Steve (Inventor); Maleki, Lute (Inventor)

    1999-01-01

    A coupled opto-electronic oscillator that directly couples a laser oscillation with an electronic oscillation to simultaneously achieve a stable RF oscillation at a high frequency and ultra-short optical pulsation by mode locking with a high repetition rate and stability. Single-mode selection can be achieved even with a very long opto-electronic loop. A multimode laser can be used to pump the electronic oscillation, resulting in a high operation efficiency. The optical and the RF oscillations are correlated to each other.

  18. Organic photosensitive cells grown on rough electrode with nano-scale morphology control

    DOEpatents

    Yang, Fan [Piscataway, NJ; Forrest, Stephen R [Ann Arbor, MI

    2011-06-07

    An optoelectronic device and a method for fabricating the optoelectronic device includes a first electrode disposed on a substrate, an exposed surface of the first electrode having a root mean square roughness of at least 30 nm and a height variation of at least 200 nm, the first electrode being transparent. A conformal layer of a first organic semiconductor material is deposited onto the first electrode by organic vapor phase deposition, the first organic semiconductor material being a small molecule material. A layer of a second organic semiconductor material is deposited over the conformal layer. At least some of the layer of the second organic semiconductor material directly contacts the conformal layer. A second electrode is deposited over the layer of the second organic semiconductor material. The first organic semiconductor material is of a donor-type or an acceptor-type relative to the second organic semiconductor material, which is of the other material type.

  19. Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices

    NASA Astrophysics Data System (ADS)

    Brillson, L. J.; Foster, G. M.; Cox, J.; Ruane, W. T.; Jarjour, A. B.; Gao, H.; von Wenckstern, H.; Grundmann, M.; Wang, B.; Look, D. C.; Hyland, A.; Allen, M. W.

    2018-03-01

    Wide-bandgap semiconductors are now leading the way to new physical phenomena and device applications at nanoscale dimensions. The impact of defects on the electronic properties of these materials increases as their size decreases, motivating new techniques to characterize and begin to control these electronic states. Leading these advances have been the semiconductors ZnO, GaN, and related materials. This paper highlights the importance of native point defects in these semiconductors and describes how a complement of spatially localized surface science and spectroscopy techniques in three dimensions can characterize, image, and begin to control these electronic states at the nanoscale. A combination of characterization techniques including depth-resolved cathodoluminescence spectroscopy, surface photovoltage spectroscopy, and hyperspectral imaging can describe the nature and distribution of defects at interfaces at both bulk and nanoscale surfaces, their metal interfaces, and inside nanostructures themselves. These features as well as temperature and mechanical strain inside wide-bandgap device structures at the nanoscale can be measured even while these devices are operating. These advanced capabilities enable several new directions for describing defects at the nanoscale, showing how they contribute to device degradation, and guiding growth processes to control them.

  20. Brillouin gain enhancement in nano-scale photonic waveguide

    NASA Astrophysics Data System (ADS)

    Nouri Jouybari, Soodabeh

    2018-05-01

    The enhancement of stimulated Brillouin scattering in nano-scale waveguides has a great contribution in the improvement of the photonic devices technology. The key factors in Brillouin gain are the electrostriction force and radiation pressure generated by optical waves in the waveguide. In this article, we have proposed a new scheme of nano-scale waveguide in which the Brillouin gain is considerably improved compared to the previously-reported schemes. The role of radiation pressure in the Brillouin gain was much higher than the role of the electrostriction force. The Brillouin gain strongly depends on the structural parameters of the waveguide and the maximum value of 12127 W-1 m-1 is obtained for the Brillouin gain.

  1. Enabling complex nanoscale pattern customization using directed self-assembly.

    PubMed

    Doerk, Gregory S; Cheng, Joy Y; Singh, Gurpreet; Rettner, Charles T; Pitera, Jed W; Balakrishnan, Srinivasan; Arellano, Noel; Sanders, Daniel P

    2014-12-16

    Block copolymer directed self-assembly is an attractive method to fabricate highly uniform nanoscale features for various technological applications, but the dense periodicity of block copolymer features limits the complexity of the resulting patterns and their potential utility. Therefore, customizability of nanoscale patterns has been a long-standing goal for using directed self-assembly in device fabrication. Here we show that a hybrid organic/inorganic chemical pattern serves as a guiding pattern for self-assembly as well as a self-aligned mask for pattern customization through cotransfer of aligned block copolymer features and an inorganic prepattern. As informed by a phenomenological model, deliberate process engineering is implemented to maintain global alignment of block copolymer features over arbitrarily shaped, 'masking' features incorporated into the chemical patterns. These hybrid chemical patterns with embedded customization information enable deterministic, complex two-dimensional nanoscale pattern customization through directed self-assembly.

  2. Opto-electronic devices with nanoparticles and their assemblies

    NASA Astrophysics Data System (ADS)

    Nguyen, Chieu Van

    Nanotechnology is a fast growing field; engineering matters at the nano-meter scale. A key nanomaterial is nanoparticles (NPs). These sub-wavelength (< 100nm) particles provide tremendous possibilities due to their unique electrical, optical, and mechanical properties. Plethora of NPs with various chemical composition, size and shape has been synthesized. Clever designs of sub-wavelength structures enable observation of unusual properties of materials, and have led to new areas of research such as metamaterials. This dissertation describes two self-assemblies of gold nanoparticles, leading to an ultra-soft thin film and multi-functional single electron device at room temperature. First, the layer-by-layer self-assembly of 10nm Au nanoparticles and polyelectrolytes is shown to behave like a cellular-foam with modulus below 100 kPa. As a result, the composite thin film (˜ 100nm) is 5 orders of magnitude softer than an equally thin typical polymer film. The thin film can be compressed reversibly to 60% strain. The extraordinarily low modulus and high compressibility are advantageous in pressure sensing applications. The unique mechanical properties of the composite film lead to development of an ultra-sensitive tactile imaging device capable of screening for breast cancer. On par with human finger sensitivity, the tactile device can detect a 5mm imbedded object up to 20mm below the surface with low background noise. The second device is based on a one-dimensional (1-D) self-directed self-assembly of Au NPs mediated by dielectric materials. Depending on the coverage density of the Au NPs assembly deposited on the device, electronic emission was observed at ultra-low bias of 40V, leading to low-power plasma generation in air at atmospheric pressure. Light emitted from the plasma is apparent to the naked eyes. Similarly, 1-D self-assembly of Au NPs mediated by iron oxide was fabricated and exhibits ferro-magnetic behavior. The multi-functional 1-D self-assembly of Au

  3. New class of optoelectronic oscillators (OEO) for microwave signal generation and processing

    NASA Astrophysics Data System (ADS)

    Maleki, Lute; Yao, X. S.

    1996-11-01

    A new class of oscillators based on photonic devices is presented. These opto-electronic oscillators (OEO's) generate microwave oscillation by converting continuous energy from a light source using a feedback circuit which includes a delay element, an electro-optic switch, and a photodetector. Different configurations of OEO's are presented, each of which may be applied to a particular application requiring ultra-high performance, or low cost and small size.

  4. Electrophoretic Separation of Single Particles Using Nanoscale Thermoplastic Columns.

    PubMed

    Weerakoon-Ratnayake, Kumuditha M; Uba, Franklin I; Oliver-Calixte, Nyoté J; Soper, Steven A

    2016-04-05

    Phenomena associated with microscale electrophoresis separations cannot, in many cases, be applied to the nanoscale. Thus, understanding the electrophoretic characteristics associated with the nanoscale will help formulate relevant strategies that can optimize the performance of separations carried out on columns with at least one dimension below 150 nm. Electric double layer (EDL) overlap, diffusion, and adsorption/desorption properties and/or dielectrophoretic effects giving rise to stick/slip motion are some of the processes that can play a role in determining the efficiency of nanoscale electrophoretic separations. We investigated the performance characteristics of electrophoretic separations carried out in nanoslits fabricated in poly(methyl methacrylate), PMMA, devices. Silver nanoparticles (AgNPs) were used as the model system with tracking of their transport via dark field microscopy and localized surface plasmon resonance. AgNPs capped with citrate groups and the negatively charged PMMA walls (induced by O2 plasma modification of the nanoslit walls) enabled separations that were not apparent when these particles were electrophoresed in microscale columns. The separation of AgNPs based on their size without the need for buffer additives using PMMA nanoslit devices is demonstrated herein. Operational parameters such as the electric field strength, nanoslit dimensions, and buffer composition were evaluated as to their effects on the electrophoretic performance, both in terms of efficiency (plate numbers) and resolution. Electrophoretic separations performed at high electric field strengths (>200 V/cm) resulted in higher plate numbers compared to lower fields due to the absence of stick/slip motion at the higher electric field strengths. Indeed, 60 nm AgNPs could be separated from 100 nm particles in free solution using nanoscale electrophoresis with 100 μm long columns.

  5. Prototype Focal-Plane-Array Optoelectronic Image Processor

    NASA Technical Reports Server (NTRS)

    Fang, Wai-Chi; Shaw, Timothy; Yu, Jeffrey

    1995-01-01

    Prototype very-large-scale integrated (VLSI) planar array of optoelectronic processing elements combines speed of optical input and output with flexibility of reconfiguration (programmability) of electronic processing medium. Basic concept of processor described in "Optical-Input, Optical-Output Morphological Processor" (NPO-18174). Performs binary operations on binary (black and white) images. Each processing element corresponds to one picture element of image and located at that picture element. Includes input-plane photodetector in form of parasitic phototransistor part of processing circuit. Output of each processing circuit used to modulate one picture element in output-plane liquid-crystal display device. Intended to implement morphological processing algorithms that transform image into set of features suitable for high-level processing; e.g., recognition.

  6. 2D Quantum Mechanical Study of Nanoscale MOSFETs

    NASA Technical Reports Server (NTRS)

    Svizhenko, Alexei; Anantram, M. P.; Govindan, T. R.; Biegel, B.; Kwak, Dochan (Technical Monitor)

    2000-01-01

    With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

  7. Optoelectronic Evaluation and Loss Analysis of PEDOT:PSS/Si Hybrid Heterojunction Solar Cells.

    PubMed

    Yang, Zhenhai; Fang, Zebo; Sheng, Jiang; Ling, Zhaoheng; Liu, Zhaolang; Zhu, Juye; Gao, Pingqi; Ye, Jichun

    2017-12-01

    The organic/silicon (Si) hybrid heterojunction solar cells (HHSCs) have attracted considerable attention due to their potential advantages in high efficiency and low cost. However, as a newly arisen photovoltaic device, its current efficiency is still much worse than commercially available Si solar cells. Therefore, a comprehensive and systematical optoelectronic evaluation and loss analysis on this HHSC is therefore highly necessary to fully explore its efficiency potential. Here, a thoroughly optoelectronic simulation is provided on a typical planar polymer poly (3,4-ethylenedioxy thiophene):polystyrenesulfonate (PEDOT:PSS)/Si HHSC. The calculated spectra of reflection and external quantum efficiency (EQE) match well with the experimental results in a full-wavelength range. The losses in current density, which are contributed by both optical losses (i.e., reflection, electrode shield, and parasitic absorption) and electrical recombination (i.e., the bulk and surface recombination), are predicted via carefully addressing the electromagnetic and carrier-transport processes. In addition, the effects of Si doping concentrations and rear surface recombination velocities on the device performance are fully investigated. The results drawn in this study are beneficial to the guidance of designing high-performance PEDOT:PSS/Si HHSCs.

  8. Platform technologies for hybrid optoelectronic integration and packaging

    NASA Astrophysics Data System (ADS)

    Datta, Madhumita

    In order to bring fiber-optics closer to individual home and business services, the optical network components have to be inexpensive and reliable. Integration and packaging of optoelectronic devices holds the key to high-volume low-cost component manufacturing. The goal of this dissertation is to propose, study, and demonstrate various ways to integrate optoelectronic devices on a packaging platform to implement cost-effective, functional optical modules. Two types of hybrid integration techniques have been proposed: flip-chip solder bump bonding for high-density two-dimensional array packaging of surface-emitting devices, and solder preform bonding for fiber-coupled edge-emitting semiconductor devices. For flip-chip solder bump bonding, we developed a simple, inexpensive remetallization process called "electroless plating", which converts the aluminum bond pads of foundry-made complementary metal oxide semiconductor (CMOS) chips into solder-bondable and wire-bondable gold surfaces. We have applied for a patent on this remetallization technique. For fiber-pigtailed edge-emitting laser modules, we have studied the coupling characteristics of different types of lensed single-mode fibers including semispherically lensed fiber, cylindrically lensed fiber and conically lensed fiber. We have experimentally demonstrated 66% coupling efficiency with semispherically lensed fiber and 50% efficiency with conically lensed fibers. We have proposed and designed a packaging platform on which lensed fibers can be actively aligned to a laser and solder-attached reliably to the platform so that the alignment is retained. We have designed thin-film nichrome heaters on fused quartz platforms as local heat source to facilitate on-board solder alignment and attachment of fiber. The thermal performance of the heaters was simulated using finite element analysis tool ANSYS prior to fabrication. Using the heater's reworkability advantage, we have estimated the shift of the fiber due to

  9. Challenge of Si/SiGe technology to optoelectronics

    NASA Astrophysics Data System (ADS)

    Chang, C. Y.; Jung, J. G.

    1993-01-01

    Low temperature epitaxy (LTE) of Si and SiGecanbe performed at a temperature of 550 C or lower. Very promising applications can be opened. Such as high speed/high frequency operations at 90GHZ by constructing heterojunction bipolar transistors. High performance FET'slikepseudomorphic p-channel orn-channel high mobility field effect transistors are presented which canbe composed to perform CMOS operations. Optoelectronic devices such as IRdetectors (1-12um), mutiple quantum well (MOW), disordered superlattice (d-SL) which are the potential candidatesof IR detector and optical sources (e.q. LED, LD etc.) Various physical insights regarding to SiGe heterostructures are presented which includeswave function filter, mass filter as well as band mixing are introduced. Researchesat National Nano Device Laboratory (NDL) which processes the capability of 0.3um Si ULSI technologies and SiGe works as well as lll-V, a-Si/SiGe lines are also presented.

  10. Modification of the optoelectronic properties of two-dimensional MoS2 crystals by ultraviolet-ozone treatment

    NASA Astrophysics Data System (ADS)

    Yang, Hae In; Park, Seonyoung; Choi, Woong

    2018-06-01

    We report the modification of the optoelectronic properties of mechanically-exfoliated single layer MoS2 by ultraviolet-ozone exposure. Photoluminescence emission of pristine MoS2 monotonically decreased and eventually quenched as ultraviolet-ozone exposure time increased from 0 to 10 min. The reduction of photoluminescence emission accompanied reduction of Raman modes, suggesting structural degradation in ultraviolet-ozone exposed MoS2. Analysis with X-ray photoelectron spectroscopy revealed that the formation of Ssbnd O and Mosbnd O bonding increases with ultraviolet-ozone exposure time. Measurement of electrical transport properties of MoS2 in a bottom-gate thin-film transistor configuration suggested the presence of insulating MoO3 after ultraviolet-ozone exposure. These results demonstrate that ultraviolet-ozone exposure can significantly influence the optoelectronic properties of single layer MoS2, providing important implications on the application of MoS2 and other two-dimensional materials into optoelectronic devices.

  11. Piezo-Phototronic Effect in a Quantum Well Structure.

    PubMed

    Huang, Xin; Du, Chunhua; Zhou, Yongli; Jiang, Chunyan; Pu, Xiong; Liu, Wei; Hu, Weiguo; Chen, Hong; Wang, Zhong Lin

    2016-05-24

    With enhancements in the performance of optoelectronic devices, the field of piezo-phototronics has attracted much attention, and several theoretical works have been reported based on semiclassical models. At present, the feature size of optoelectronic devices are rapidly shrinking toward several tens of nanometers, which results in the quantum confinement effect. Starting from the basic piezoelectricity equation, Schrödinger equation, Poisson equation, and Fermi's golden rule, a self-consistent theoretical model is proposed to study the piezo-phototronic effect in the framework of perturbation theory in quantum mechanics. The validity and universality of this model are well-proven with photoluminescence measurements in a single GaN/InGaN quantum well and multiple GaN/InGaN quantum wells. This study provides important insight into the working principle of nanoscale piezo-phototronic devices as well as guidance for the future device design.

  12. 2,5-linked polyfluorenes for optoelectronic devices

    DOEpatents

    Cella, James Anthony; Shiang, Joseph John; Shanklin, Elliott West; Smigelski, Paul Michael

    2010-06-08

    Polyfluorene polymers and copolymers having substantial amounts (10-100%) of fluorenes coupled at the 2 and 5 positions of fluorene are useful as active layers in OLED devices where triplet energies >2.10 eV are required.

  13. 2,5-linked polyfluorenes for optoelectronic devices

    DOEpatents

    Cella, James Anthony [Clifton Park, NY; Shiang, Joseph John [Niskayuna, NY; Shanklin, Elliott West [Altamont, NY; Smigelski, Jr, Paul Michael

    2011-06-28

    Polyfluorene polymers and copolymers having substantial amounts (10-100%) of fluorenes coupled at the 2 and 5 positions of fluorene are useful as active layers in OLED devices where triplet energies >2.10 eV are required.

  14. 2,5-linked polyfluorenes for optoelectronic devices

    DOEpatents

    Cella, James Anthony [Clifton Park, NY; Shiang, Joseph John [Niskayuna, NY; Shanklin, Elliott West [Altamont, NY; Smigelski, Paul Michael [Scotia, NY

    2009-12-22

    Polyfluorene polymers and copolymers having substantial amounts (10-100%) of fluorenes coupled at the 2 and 5 positions of fluorene are useful as active layers in OLED devices where triplet energies >2.10 eV are required.

  15. 2,5-linked polyfluorenes for optoelectronic devices

    DOEpatents

    Cella, James Anthony [Clifton Park, NY; Shiang, Joseph John [Niskayuna, NY; Shanklin, Elliott West [Altamont, NY; Smigelski, Jr., Paul Michael

    2011-11-08

    Polyfluorene polymers and copolymers having substantial amounts (10-100%) of fluorenes coupled at the 2 and 5 positions of fluorene are useful as active layers in OLED devices where triplet energies >2.10 eV are required.

  16. Optoelectronic and Thermoelectric Properties of Bi2OX 2 (X = S, Se, Te) for Solar Cells and Thermoelectric Devices

    NASA Astrophysics Data System (ADS)

    Azam, Sikander; Khan, Saleem Ayaz; Goumri-Said, Souraya

    2018-02-01

    We have explored the optoelectronic structure and related thermoelectric properties of Bi2OX 2 (X = S, Se, Te) using density functional theory and spin-orbit coupling (SOC). We report herein calculations of the bandgap of these bismuth sulfides/oxysulfides to participate in the recent debate regarding such values. The generalized gradient approximation calculations corrected using the SOC scheme estimated bandgaps of 0.950 eV, 0.635 eV, and 0.441 eV for Bi2OS2, Bi2OSe2, and Bi2OTe2, respectively, in close agreement with experimental results and showing better accuracy compared with available theoretical calculations. This bandgap range shows the potential use of Bi2OX 2 for solar cell applications. Hence, we derived their optical and thermoelectric properties. Similarly to one of the parent materials, Bi2S3, a semiconductor with special photovoltaic and thermoelectric properties, the present derivatives Bi2OX 2 show promising characteristics for exploration in the near future for use in solar cells and thermoelectric devices.

  17. Dustiness of Fine and Nanoscale Powders

    PubMed Central

    Evans, Douglas E.; Baron, Paul A.

    2013-01-01

    Dustiness may be defined as the propensity of a powder to form airborne dust by a prescribed mechanical stimulus; dustiness testing is typically intended to replicate mechanisms of dust generation encountered in workplaces. A novel dustiness testing device, developed for pharmaceutical application, was evaluated in the dustiness investigation of 27 fine and nanoscale powders. The device efficiently dispersed small (mg) quantities of a wide variety of fine and nanoscale powders, into a small sampling chamber. Measurements consisted of gravimetrically determined total and respirable dustiness. The following materials were studied: single and multiwalled carbon nanotubes, carbon nanofibers, and carbon blacks; fumed oxides of titanium, aluminum, silicon, and cerium; metallic nanoparticles (nickel, cobalt, manganese, and silver) silicon carbide, Arizona road dust; nanoclays; and lithium titanate. Both the total and respirable dustiness spanned two orders of magnitude (0.3–37.9% and 0.1–31.8% of the predispersed test powders, respectively). For many powders, a significant respirable dustiness was observed. For most powders studied, the respirable dustiness accounted for approximately one-third of the total dustiness. It is believed that this relationship holds for many fine and nanoscale test powders (i.e. those primarily selected for this study), but may not hold for coarse powders. Neither total nor respirable dustiness was found to be correlated with BET surface area, therefore dustiness is not determined by primary particle size. For a subset of test powders, aerodynamic particle size distributions by number were measured (with an electrical low-pressure impactor and an aerodynamic particle sizer). Particle size modes ranged from approximately 300nm to several micrometers, but no modes below 100nm, were observed. It is therefore unlikely that these materials would exhibit a substantial sub-100nm particle contribution in a workplace. PMID:23065675

  18. Neuromorphic computing with nanoscale spintronic oscillators

    PubMed Central

    Torrejon, Jacob; Riou, Mathieu; Araujo, Flavio Abreu; Tsunegi, Sumito; Khalsa, Guru; Querlioz, Damien; Bortolotti, Paolo; Cros, Vincent; Fukushima, Akio; Kubota, Hitoshi; Yuasa, Shinji; Stiles, M. D.; Grollier, Julie

    2017-01-01

    Neurons in the brain behave as non-linear oscillators, which develop rhythmic activity and interact to process information1. Taking inspiration from this behavior to realize high density, low power neuromorphic computing will require huge numbers of nanoscale non-linear oscillators. Indeed, a simple estimation indicates that, in order to fit a hundred million oscillators organized in a two-dimensional array inside a chip the size of a thumb, their lateral dimensions must be smaller than one micrometer. However, despite multiple theoretical proposals2–5, and several candidates such as memristive6 or superconducting7 oscillators, there is no proof of concept today of neuromorphic computing with nano-oscillators. Indeed, nanoscale devices tend to be noisy and to lack the stability required to process data in a reliable way. Here, we show experimentally that a nanoscale spintronic oscillator8,9 can achieve spoken digit recognition with accuracies similar to state of the art neural networks. We pinpoint the regime of magnetization dynamics leading to highest performance. These results, combined with the exceptional ability of these spintronic oscillators to interact together, their long lifetime, and low energy consumption, open the path to fast, parallel, on-chip computation based on networks of oscillators. PMID:28748930

  19. Polymer/fullerene photovoltaic devices: Nanoscale control of the interface by thermally-controlled interdiffusion

    NASA Astrophysics Data System (ADS)

    Drees, Martin

    -PPV bulk in the form of >10 nm clusters. This clustering of C60 is a result of its tendency to crystallize and the low miscibility of C 60 in MEH-PPV, leading to strong phase separation. To improve the interdiffusion process, the donor polymer is replaced by poly(3-octylthiophene-2,5-diyl) (P3OT), which has a better miscibility with C60. Again, the photocurrents of the interdiffused devices are improved significantly. A monochromatic power conversion efficiency of 1.5% is obtained for illumination of 3.8 mW/cm2 at 470 nm. The polymer concentration in unheated and interdiffused films is studied with Auger spectroscopy in combination with ion beam milling. The concentration profile shows a distinct interface between P3OT and C60 in unheated films and a slow rise of the P3OT concentration throughout a large cross-section of the interdiffused film. TEM studies on P3OT/C60 films show that C60 still has some tendency to form clusters. The results of this thesis demonstrate that thermally-controlled interdiffusion is a viable approach for fabrication of efficient photovoltaic devices through nanoscale control of composition and morphology. These results are also used to draw conclusions about the influence of film morphology on the photovoltaic device efficiency and to identify important issues related to materials choice for the interdiffusion process. Prospective variations in materials choice are suggested to achieve better film morphologies.

  20. Tunable all-optical plasmonic rectifier in nanoscale metal-insulator-metal waveguides.

    PubMed

    Xu, Yi; Wang, Xiaomeng; Deng, Haidong; Guo, Kangxian

    2014-10-15

    We propose a tunable all-optical plasmonic rectifier based on the nonlinear Fano resonance in a metal-insulator-metal plasmonic waveguide and cavities coupling system. We develop a theoretical model based on the temporal coupled-mode theory to study the device physics of the nanoscale rectifier. We further demonstrate via the finite difference time domain numerical experiment that our idea can be realized in a plasmonic system with an ultracompact size of ~120×800  nm². The tunable plasmonic rectifier could facilitate the all-optical signal processing in nanoscale.

  1. Investigating the Mobility of Trilayer Graphene Nanoribbon in Nanoscale FETs

    NASA Astrophysics Data System (ADS)

    Rahmani, Meisam; Ghafoori Fard, Hassan; Ahmadi, Mohammad Taghi; Rahbarpour, Saeideh; Habibiyan, Hamidreza; Varmazyari, Vali; Rahmani, Komeil

    2017-10-01

    The aim of the present paper is to investigate the scaling behaviors of charge carrier mobility as one of the most remarkable characteristics for modeling of nanoscale field-effect transistors (FETs). Many research groups in academia and industry are contributing to the model development and experimental identification of multi-layer graphene FET-based devices. The approach in the present work is to provide an analytical model for carrier mobility of tri-layer graphene nanoribbon (TGN) FET. In order to do so, one starts by identifying the analytical modeling of TGN carrier velocity and ballistic conductance. At the end, a model of charge carrier mobility with numerical solution is analytically derived for TGN FET, in which the carrier concentration, temperature and channel length characteristics dependence are highlighted. Moreover, variation of band gap and gate voltage during the proposed device operation and its effect on carrier mobility is investigated. To evaluate the nanoscale FET performance, the carrier mobility model is also adopted to obtain the I-V characteristics of the device. In order to verify the accuracy of the proposed analytical model for TGN mobility, it is compared to the existing experimental data, and a satisfactory agreement is reported for analogous ambient conditions. Moreover, the proposed model is compared with the published data of single-layer graphene and bi-layer graphene, in which the obtained results demonstrate significant insights into the importance of charge carrier mobility impact in high-performance TGN FET. The work presented here is one step towards an applicable model for real-world nanoscale FETs.

  2. Electrostatically tunable lateral MoTe2 p-n junction for use in high-performance optoelectronics.

    PubMed

    Wang, Zhenxing; Wang, Feng; Yin, Lei; Huang, Yun; Xu, Kai; Wang, Fengmei; Zhan, Xueying; He, Jun

    2016-07-21

    Because of their ultimate thickness, layered structure and high flexibility, pn junctions based on layered two-dimensional semiconductors have been attracting increasing attention recently. In this study, for the first time, we fabricated lateral pn junctions (LPNJs) based on ultrathin MoTe2 by introducing two separated electrostatic back gates, and investigated their electronic and photovoltaic performance. Pn, np, nn, and pp junctions can be easily realized by modulating the conductive channel type using gate voltages with different polarities. Strong rectification effects were observed in the pn and np junctions and the rectification ratio reached ∼5 × 10(4). Importantly, we find a unique phenomenon that the parameters for MoTe2 LPNJs experience abrupt changes during the transition from p to n or n to p. Furthermore, a high performance photovoltaic device with a filling factor of above 51% and electrical conversion efficiency (η) of around 0.5% is achieved. Our findings are of importance to comprehensively understand the electronic and optoelectronic properties of MoTe2 and may further open up novel electronic and optoelectronic device applications.

  3. Strong electrically tunable MoTe2/graphene van der Waals heterostructures for high-performance electronic and optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Wang, Feng; Yin, Lei; Wang, Zhenxing; Xu, Kai; Wang, Fengmei; Shifa, Tofik Ahmed; Huang, Yun; Wen, Yao; Jiang, Chao; He, Jun

    2016-11-01

    MoTe2 is an emerging two-dimensional layered material showing ambipolar/p-type conductivity, which makes it an important supplement to n-type two-dimensional layered material like MoS2. However, the properties based on its van der Waals heterostructures have been rarely studied. Here, taking advantage of the strong Fermi level tunability of monolayer graphene (G) and the feature of van der Waals interfaces that is free from Fermi level pinning effect, we fabricate G/MoTe2/G van der Waals heterostructures and systematically study the electronic and optoelectronic properties. We demonstrate the G/MoTe2/G FETs with low Schottky barriers for both holes (55.09 meV) and electrons (122.37 meV). Moreover, the G/MoTe2/G phototransistors show high photoresponse performances with on/off ratio, responsivity, and detectivity of ˜105, 87 A/W, and 1012 Jones, respectively. Finally, we find the response time of the phototransistors is effectively tunable and a mechanism therein is proposed to explain our observation. This work provides an alternative choice of contact for high-performance devices based on p-type and ambipolar two-dimensional layered materials.

  4. Novel Electrical and Optoelectronic Characterization Methods for Semiconducting Nanowires and Nanotubes

    NASA Astrophysics Data System (ADS)

    Katzenmeyer, Aaron Michael

    As technology journalist David Pogue recounted, "If everything we own had improved over the last 25 years as much as electronics have, the average family car would travel four times faster than the space shuttle; houses would cost 200 bucks." The electronics industry is one which, through Moore's Law, created a self-fulfilling prophecy of exponential advancement. This progress has made unforeseen technologies commonplace and revealed new physical understanding of the world in which we live. It is in keeping with these trends that the current work is motivated. This dissertation focuses on the advancement of electrical and optoelectronic characterization techniques suitable for understanding the underlying physics and applications of nanoscopic devices, in particular semiconducting nanowires and nanotubes. In this work an in situ measurement platform based on a field-emission scanning electron microscope fitted with an electrical nanoprobe is shown to be a robust instrument for determining fundamental aspects of nanowire systems (i.e. the dominant mode of carrier transport and the nature of the electrical contacts to the nanowire). The platform is used to fully classify two distinct systems. In one instance it is found that indium arsenide nanowires display space-charge-limited transport and are contacted Ohmically. In the other, gallium arsenide nanowires are found to sequentially show the trap-mediated transport regimes of Poole-Frenkel effect and phonon-assisted tunneling. The contacts in this system are resolved to be asymmetric -- one is Ohmic while the other is a Schottky barrier. Additionally scanning photocurrent microscopy is used to spatially resolve optoelectronic nanowire and nanotube devices. In core/shell gallium arsenide nanowire solar cell arrays it is shown that each individual nanowire functions as a standalone solar cell. Nanotube photodiodes are mapped by scanning photocurrent microscopy to confirm an optimal current collection scheme has been

  5. Geometric rectification for nanoscale vibrational energy harvesting

    NASA Astrophysics Data System (ADS)

    Bustos-Marún, Raúl A.

    2018-02-01

    In this work, we present a mechanism that, based on quantum-mechanical principles, allows one to recover kinetic energy at the nanoscale. Our premise is that very small mechanical excitations, such as those arising from sound waves propagating through a nanoscale system or similar phenomena, can be quite generally converted into useful electrical work by applying the same principles behind conventional adiabatic quantum pumping. The proposal is potentially useful for nanoscale vibrational energy harvesting where it can have several advantages. The most important one is that it avoids the use of classical rectification mechanisms as it is based on what we call geometric rectification. We show that this geometric rectification results from applying appropriate but quite general initial conditions to damped harmonic systems coupled to electronic reservoirs. We analyze an analytically solvable example consisting of a wire suspended over permanent charges where we find the condition for maximizing the pumped charge. We also studied the effects of coupling the system to a capacitor including the effect of current-induced forces and analyzing the steady-state voltage of operation. Finally, we show how quantum effects can be used to boost the performance of the proposed device.

  6. Characteristics for electrochemical machining with nanoscale voltage pulses.

    PubMed

    Lee, E S; Back, S Y; Lee, J T

    2009-06-01

    Electrochemical machining has traditionally been used in highly specialized fields, such as those of the aerospace and defense industries. It is now increasingly being applied in other industries, where parts with difficult-to-cut material, complex geometry and tribology, and devices of nanoscale and microscale are required. Electric characteristic plays a principal function role in and chemical characteristic plays an assistant function role in electrochemical machining. Therefore, essential parameters in electrochemical machining can be described current density, machining time, inter-electrode gap size, electrolyte, electrode shape etc. Electrochemical machining provides an economical and effective method for machining high strength, high tension and heat-resistant materials into complex shapes such as turbine blades of titanium and aluminum alloys. The application of nanoscale voltage pulses between a tool electrode and a workpiece in an electrochemical environment allows the three-dimensional machining of conducting materials with sub-micrometer precision. In this study, micro probe are developed by electrochemical etching and micro holes are manufactured using these micro probe as tool electrodes. Micro holes and microgroove can be accurately achieved by using nanoscale voltages pulses.

  7. Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics.

    PubMed

    Wang, Gongming; Li, Dehui; Cheng, Hung-Chieh; Li, Yongjia; Chen, Chih-Yen; Yin, Anxiang; Zhao, Zipeng; Lin, Zhaoyang; Wu, Hao; He, Qiyuan; Ding, Mengning; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

    2015-10-01

    Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems.

  8. Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics

    PubMed Central

    Wang, Gongming; Li, Dehui; Cheng, Hung-Chieh; Li, Yongjia; Chen, Chih-Yen; Yin, Anxiang; Zhao, Zipeng; Lin, Zhaoyang; Wu, Hao; He, Qiyuan; Ding, Mengning; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

    2015-01-01

    Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that the resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. The ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems. PMID:26601297

  9. Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics

    DOE PAGES

    Wang, Gongming; Li, Dehui; Cheng, Hung -Chieh; ...

    2015-10-02

    Methylammonium lead iodide perovskite has attracted intensive interest for its diverse optoelectronic applications. However, most studies to date have been limited to bulk thin films that are difficult to implement for integrated device arrays because of their incompatibility with typical lithography processes. We report the first patterned growth of regular arrays of perovskite microplate crystals for functional electronics and optoelectronics. We show that large arrays of lead iodide microplates can be grown from an aqueous solution through a seeded growth process and can be further intercalated with methylammonium iodide to produce perovskite crystals. Structural and optical characterizations demonstrate that themore » resulting materials display excellent crystalline quality and optical properties. We further show that perovskite crystals can be selectively grown on prepatterned electrode arrays to create independently addressable photodetector arrays and functional field effect transistors. Furthermore, the ability to grow perovskite microplates and to precisely place them at specific locations offers a new material platform for the fundamental investigation of the electronic and optical properties of perovskite materials and opens a pathway for integrated electronic and optoelectronic systems.« less

  10. Design Two-dimensional Materials with Superb Electronic and Optoelectronic Properties: The case of SiS

    NASA Astrophysics Data System (ADS)

    Wei, Su-Huai; Yang, Ji-Hui; Zhang, Yueyu; Yin, Wan-Jian; Gong, X. G.; Yakobson, Boris I.

    Two-dimensional (2D) semiconductors have many unique electronic and optoelectronic properties that is suitable for novel device applications. Most of the current study are focused on group IV or transition metal chalcogenides. In this study, using atomic transmutation and global optimization methods, we identified two group IV-VI 2D materials, Pma2-SiS and silicene sulfide that can overcome shortcomings encountered in conventional 2D semiconducttord. Pma2-SiS is found to be both chemically, energetically, and thermally stable. Most importantly, Pma2-SiS has unique electronic and optoelectronic properties, including direct bandgaps suitable for solar cells, good mobility for nanoelectronics, good flexibility of property tuning by layer thickness and strain appliance, and good air stability as well. Therefore, Pma2-SiS is expected to be a very promising 2D material in the field of 2D electronics and optoelectronics. Silicene sulfide also shows similar properties. We believe that the designing principles and approaches used to identify these materials have great potential to accelerate future finding of new functional materials within the 2D families.

  11. Reconfigurable nanoscale spin-wave directional coupler

    PubMed Central

    Wang, Qi; Pirro, Philipp; Verba, Roman; Slavin, Andrei; Hillebrands, Burkard; Chumak, Andrii V.

    2018-01-01

    Spin waves, and their quanta magnons, are prospective data carriers in future signal processing systems because Gilbert damping associated with the spin-wave propagation can be made substantially lower than the Joule heat losses in electronic devices. Although individual spin-wave signal processing devices have been successfully developed, the challenging contemporary problem is the formation of two-dimensional planar integrated spin-wave circuits. Using both micromagnetic modeling and analytical theory, we present an effective solution of this problem based on the dipolar interaction between two laterally adjacent nanoscale spin-wave waveguides. The developed device based on this principle can work as a multifunctional and dynamically reconfigurable signal directional coupler performing the functions of a waveguide crossing element, tunable power splitter, frequency separator, or multiplexer. The proposed design of a spin-wave directional coupler can be used both in digital logic circuits intended for spin-wave computing and in analog microwave signal processing devices. PMID:29376117

  12. Reconfigurable nanoscale spin-wave directional coupler.

    PubMed

    Wang, Qi; Pirro, Philipp; Verba, Roman; Slavin, Andrei; Hillebrands, Burkard; Chumak, Andrii V

    2018-01-01

    Spin waves, and their quanta magnons, are prospective data carriers in future signal processing systems because Gilbert damping associated with the spin-wave propagation can be made substantially lower than the Joule heat losses in electronic devices. Although individual spin-wave signal processing devices have been successfully developed, the challenging contemporary problem is the formation of two-dimensional planar integrated spin-wave circuits. Using both micromagnetic modeling and analytical theory, we present an effective solution of this problem based on the dipolar interaction between two laterally adjacent nanoscale spin-wave waveguides. The developed device based on this principle can work as a multifunctional and dynamically reconfigurable signal directional coupler performing the functions of a waveguide crossing element, tunable power splitter, frequency separator, or multiplexer. The proposed design of a spin-wave directional coupler can be used both in digital logic circuits intended for spin-wave computing and in analog microwave signal processing devices.

  13. Carbon nanotube chemistry and assembly for electronic devices

    NASA Astrophysics Data System (ADS)

    Derycke, Vincent; Auvray, Stéphane; Borghetti, Julien; Chung, Chia-Ling; Lefèvre, Roland; Lopez-Bezanilla, Alejandro; Nguyen, Khoa; Robert, Gaël; Schmidt, Gregory; Anghel, Costin; Chimot, Nicolas; Lyonnais, Sébastien; Streiff, Stéphane; Campidelli, Stéphane; Chenevier, Pascale; Filoramo, Arianna; Goffman, Marcelo F.; Goux-Capes, Laurence; Latil, Sylvain; Blase, Xavier; Triozon, François; Roche, Stephan; Bourgoin, Jean-Philippe

    2009-05-01

    Carbon nanotubes (CNTs) have exceptional physical properties that make them one of the most promising building blocks for future nanotechnologies. They may in particular play an important role in the development of innovative electronic devices in the fields of flexible electronics, ultra-high sensitivity sensors, high frequency electronics, opto-electronics, energy sources and nano-electromechanical systems (NEMS). Proofs of concept of several high performance devices already exist, usually at the single device level, but there remain many serious scientific issues to be solved before the viability of such routes can be evaluated. In particular, the main concern regards the controlled synthesis and positioning of nanotubes. In our opinion, truly innovative use of these nano-objects will come from: (i) the combination of some of their complementary physical properties, such as combining their electrical and mechanical properties; (ii) the combination of their properties with additional benefits coming from other molecules grafted on the nanotubes (this route being particularly relevant for gas- and bio-sensors, opto-electronic devices and energy sources); and (iii) the use of chemically- or bio-directed self-assembly processes to allow the efficient combination of several devices into functional arrays or circuits. In this article, we review our recent results concerning nanotube chemistry and assembly and their use to develop electronic devices. In particular, we present carbon nanotube field effect transistors and their chemical optimization, high frequency nanotube transistors, nanotube-based opto-electronic devices with memory capabilities and nanotube-based nano-electromechanical systems (NEMS). The impact of chemical functionalization on the electronic properties of CNTs is analyzed on the basis of theoretical calculations. To cite this article: V. Derycke et al., C. R. Physique 10 (2009).

  14. Molecular Photovoltaics in Nanoscale Dimension

    PubMed Central

    Burtman, Vladimir; Zelichonok, Alexander; Pakoulev, Andrei V.

    2011-01-01

    This review focuses on the intrinsic charge transport in organic photovoltaic (PVC) devices and field-effect transistors (SAM-OFETs) fabricated by vapor phase molecular self-assembly (VP-SAM) method. The dynamics of charge transport are determined and used to clarify a transport mechanism. The 1,4,5,8-naphthalene-tetracarboxylic diphenylimide (NTCDI) SAM devices provide a useful tool to study the fundamentals of polaronic transport at organic surfaces and to discuss the performance of organic photovoltaic devices in nanoscale. Time-resolved photovoltaic studies allow us to separate the charge annihilation kinetics in the conductive NTCDI channel from the overall charge kinetic in a SAM-OFET device. It has been demonstrated that tuning of the type of conductivity in NTCDI SAM-OFET devices is possible by changing Si substrate doping. Our study of the polaron charge transfer in organic materials proposes that a cation-radical exchange (redox) mechanism is the major transport mechanism in the studied SAM-PVC devices. The role and contribution of the transport through delocalized states of redox active surface molecular aggregates of NTCDI are exposed and investigated. This example of technological development is used to highlight the significance of future technological development of nanotechnologies and to appreciate a structure-property paradigm in organic nanostructures. PMID:21339983

  15. Superenhancers: novel opportunities for nanowire optoelectronics.

    PubMed

    Khudiyev, Tural; Bayindir, Mehmet

    2014-12-16

    Nanowires play a crucial role in the development of new generation optoelectronic devices ranging from photovoltaics to photodetectors, as these designs capitalize on the low material usage, utilize leaky-mode optical resonances and possess high conversion efficiencies associated with nanowire geometry. However, their current schemes lack sufficient absorption capacity demanded for their practical applicability, and more efficient materials cannot find widespread usage in these designs due to their rarity and cost. Here we suggest a novel and versatile nanoconcentrator scheme utilizing unique optical features of non-resonant Mie (NRM) scattering regime associated with low-index structures. The scattering regime is highly compatible with resonant Mie absorption effect taking place in nanowire absorbers. This technique in its optimized forms can provide up to 1500% total absorption enhancement, 400-fold material save and is suitable for large-area applications with significant area preservation compared to thin-film of same materials. Proposed superenhancer concept with its exceptional features such as broadband absorption enhancement, polarization immunity and material-independent manner paves the way for development of efficient nanowire photosensors or solar thermophotovoltaic devices and presents novel design opportunities for self-powered nanosystems.

  16. Optoelectronic forces with quantum wells for cavity optomechanics in GaAs/AlAs semiconductor microcavities

    NASA Astrophysics Data System (ADS)

    Villafañe, V.; Sesin, P.; Soubelet, P.; Anguiano, S.; Bruchhausen, A. E.; Rozas, G.; Carbonell, C. Gomez; Lemaître, A.; Fainstein, A.

    2018-05-01

    Radiation pressure, electrostriction, and photothermal forces have been investigated to evidence backaction, nonlinearities, and quantum phenomena in cavity optomechanics. We show here through a detailed study of the relative intensity of the cavity mechanical modes observed when exciting with pulsed lasers close to the GaAs optical gap that optoelectronic forces involving real carrier excitation and deformation potential interaction are the strongest mechanism of light-to-sound transduction in semiconductor GaAs/AlAs distributed Bragg reflector optomechanical resonators. We demonstrate that the ultrafast spatial redistribution of the photoexcited carriers in microcavities with massive GaAs spacers leads to an enhanced coupling to the fundamental 20-GHz vertically polarized mechanical breathing mode. The carrier diffusion along the growth axis of the device can be enhanced by increasing the laser power, or limited by embedding GaAs quantum wells in the cavity spacer, a strategy used here to prove and engineer the optoelectronic forces in phonon generation with real carriers. The wavelength dependence of the observed phenomena provide further proof of the role of optoelectronic forces. The optical forces associated with the different intervening mechanisms and their relevance for dynamical backaction in optomechanics are evaluated using finite-element methods. The results presented open the path to the study of hitherto seldom investigated dynamical backaction in optomechanical solid-state resonators in the presence of optoelectronic forces.

  17. Optoelectronic characteristics of MEH-PPV + BT blend thin films in polymer light emitting diodes

    NASA Astrophysics Data System (ADS)

    Massah Bidgoli, M.; Mohsennia, M.; Akbari Boroumand, F.; Mohsen Nia, A.

    2015-06-01

    Due to the unique optical and electronic properties of conjugated polymers, much research has been conducted to study the effect of the incorporation of electron-transporting materials on the polymer blends’ compatibility and their capability for use in optoelectronic devices. In this work, to characterize the optoelectronic properties of blend thin films of poly [2-methoxy-5-(2’-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) with benzothiadiazole (BT), polymer light- emitting diodes (PLEDs) with single-emission layers of MEH-PPV + BT blends have been fabricated. The influence of MEH-PPV + BT blend weight ratios over ITO/PEDOT:PSS/MEH-PPV + BT/Al PLEDs performances, e.g., lifetime, turn-on voltage, and current density-voltage (J-V) characteristics, has been studied. According to the obtained results, the turn-on voltage of the devices successfully decreased with the addition of the BT as an electronic transportation material. At an optimum condition, we obtained a turn-on voltage as low as 5 V and a lifetime of about 190 h for a device incorporating 65% BT. The logarithmic plots of the J-V characteristics of the fabricated devices showed a power law behavior (J ∝ Vk+1) with three distinct regions. The J-V characteristics have been explained by the Fowler-Nordheim (FN) tunneling model. It was found that the hole-injection barrier height decreases with increasing BT content in the range of 0-65%. According to the obtained results, in all of our investigations, the electroluminescence (EL) originated exclusively from the MEH-PPV material, even for the high BT contents.

  18. The Optoelectronic Properties of Nanoparticles from First Principles Calculations

    NASA Astrophysics Data System (ADS)

    Brawand, Nicholas Peter

    The tunable optoelectronic properties of nanoparticles through the modification of their size, shape, and surface chemistry, make them promising platforms for numerous applications, including electronic and solar conversion devices. However, the rational design and optimization of nanostructured materials remain open challenges, e.g. due to difficulties in controlling and reproducing synthetic processes and in precise atomic-scale characterization. Hence, the need for accurate theoretical predictions, which can complement and help interpret experiments and provide insight into the underlying physical properties of nanostructured materials. This dissertation focuses on the development and application of first principles calculations to predict the optoelectronic properties of nanoparticles. Novel methods based on density functional theory are developed, implemented, and applied to predict both optical and charge transport properties. In particular, the generalization of dielectric dependent hybrid functionals to finite systems is introduced and shown to yield highly accurate electronic structure properties of molecules and nanoparticles, including photoemission and absorption properties. In addition, an implementation of constrained density functional theory is discussed, for the calculation of hopping transport in nanoparticle systems. The implementation was verified against literature results and compared against other methods used to compute transport properties, showing that some methods used in the literature give unphysical results for thermally disordered systems. Furthermore, the constrained density functional theory implementation was coupled to the self-consistent image charge method, making it possible to include image charge effects self-consistently when predicting charge transport properties of nanoparticles near interfaces. The methods developed in this dissertation were then applied to study the optoelectronic and transport properties of specific

  19. Experimental Study of Electron and Phonon Dynamics in Nanoscale Materials by Ultrafast Laser Time-Domain Spectroscopy

    NASA Astrophysics Data System (ADS)

    Shen, Xiaohan

    With the rapid advances in the development of nanotechnology, nowadays, the sizes of elementary unit, i.e. transistor, of micro- and nanoelectronic devices are well deep into nanoscale. For the pursuit of cheaper and faster nanoscale electronic devices, the size of transistors keeps scaling down. As the miniaturization of the nanoelectronic devices, the electrical resistivity increases dramatically, resulting rapid growth in the heat generation. The heat generation and limited thermal dissipation in nanoscale materials have become a critical problem in the development of the next generation nanoelectronic devices. Copper (Cu) is widely used conducting material in nanoelectronic devices, and the electron-phonon scattering is the dominant contributor to the resistivity in Cu nanowires at room temperature. Meanwhile, phonons are the main carriers of heat in insulators, intrinsic and lightly doped semiconductors. The thermal transport is an ensemble of phonon transport, which strongly depends on the phonon frequency. In addition, the phonon transport in nanoscale materials can behave fundamentally different than in bulk materials, because of the spatial confinement. However, the size effect on electron-phonon scattering and frequency dependent phonon transport in nanoscale materials remain largely unexplored, due to the lack of suitable experimental techniques. This thesis is mainly focusing on the study of carrier dynamics and acoustic phonon transport in nanoscale materials. The weak photothermal interaction in Cu makes thermoreflectance measurement difficult, we rather measured the reflectivity change of Cu induced by absorption variation. We have developed a method to separately measure the processes of electron-electron scattering and electron-phonon scattering in epitaxial Cu films by monitoring the transient reflectivity signal using the resonant probe with particular wavelengths. The enhancement on electron-phonon scattering in epitaxial Cu films with thickness

  20. Monolithically integrated two-dimensional arrays of optoelectronic threshold devices for neural network applications

    NASA Technical Reports Server (NTRS)

    Kim, J. H.; Katz, J.; Lin, S. H.; Psaltis, D.

    1989-01-01

    A monolithic 10 x 10 two-dimensional array of 'optical neuron' optoelectronic threshold elements for neural network applications has been designed, fabricated, and tested. Overall array dimensions are 5 x 5 mm, while the individual neurons, composed of an LED that is driven by a double-heterojunction bipolar transistor, are 250 x 250 microns. The overall integrated structure exhibited semiconductor-controlled rectifier characteristics, with a breakover voltage of 75 V and a reverse-breakdown voltage of 60 V; this is attributable to the parasitic p-n-p transistor which exists as a result of the sharing of the same n-AlGaAs collector between the transistors and the LED.

  1. Nanoscale displacement sensing using microfabricated variable-inductance planar coils

    NASA Astrophysics Data System (ADS)

    Coskun, M. Bulut; Thotahewa, Kasun; Ying, York-Sing; Yuce, Mehmet; Neild, Adrian; Alan, Tuncay

    2013-09-01

    Microfabricated spiral inductors were employed for nanoscale displacement detection, suitable for use in implantable pressure sensor applications. We developed a variable inductor sensor consisting of two coaxially positioned planar coils connected in series to a measurement circuit. The devices were characterized by varying the air gap between the coils hence changing the inductance, while a Colpitts oscillator readout was used to obtain corresponding frequencies. Our approach shows significant advantages over existing methodologies combining a displacement resolution of 17 nm and low hysteresis (0.15%) in a 1 × 1 mm2 device. We show that resolution could be further improved by shrinking the device's lateral dimensions.

  2. Bio-Organic Optoelectronic Devices Using DNA

    NASA Astrophysics Data System (ADS)

    Singh, Thokchom Birendra; Sariciftci, Niyazi Serdar; Grote, James G.

    Biomolecular DNA, as a marine waste product from salmon processing, has been exploited as biodegradable polymeric material for photonics and electronics. For preparing high optical quality thin films of DNA, a method using DNA with cationic surfactants such as DNA-cetyltrimethylammonium, CTMA has been applied. This process enhances solubility and processing for thin film fabrication. These DNA-CTMA complexes resulted in the formation of self-assembled supramolecular films. Additionally, the molecular weight can be tailored to suit the application through sonication. It revealed that DNA-CTMA complexes were thermostable up to 230 ∘ C. UV-VIS absorption shows that these thin films have high transparency from 350 to about 1,700 nm. Due to its nature of large band gap and large dielectric constant, thin films of DNA-CTMA has been successfully used in multiple applications such as organic light emitting diodes (OLED), a cladding and host material in nonlinear optical devices, and organic field-effect transistors (OFET). Using this DNA based biopolymers as a gate dielectric layer, OFET devices were fabricated that exhibits current-voltage characteristics with low voltages as compared with using other polymer-based dielectrics. Using a thin film of DNA-CTMA based biopolymer as the gate insulator and pentacene as the organic semiconductor, we have demonstrated a bio-organic FET or BioFET in which the current was modulated over three orders of magnitude using gate voltages less than 10 V. Given the possibility to functionalise the DNA film customised for specific purposes viz. biosensing, DNA-CTMA with its unique structural, optical and electronic properties results in many applications that are extremely interesting.

  3. Pump-probe spectroscopy in organic semiconductors: monitoring fundamental processes of relevance in optoelectronics.

    PubMed

    Cabanillas-Gonzalez, Juan; Grancini, Giulia; Lanzani, Guglielmo

    2011-12-08

    In this review we highlight the contribution of pump-probe spectroscopy to understand elementary processes taking place in organic based optoelectronic devices. The techniques described in this article span from conventional pump-probe spectroscopy to electromodulated pump-probe and the state-of-the-art confocal pump-probe microscopy. The article is structured according to three fundamental processes (optical gain, charge photogeneration and charge transport) and the contribution of these techniques on them. The combination of these tools opens up new perspectives for assessing the role of short-lived excited states on processes lying underneath organic device operation. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Digital optical computers at the optoelectronic computing systems center

    NASA Technical Reports Server (NTRS)

    Jordan, Harry F.

    1991-01-01

    The Digital Optical Computing Program within the National Science Foundation Engineering Research Center for Opto-electronic Computing Systems has as its specific goal research on optical computing architectures suitable for use at the highest possible speeds. The program can be targeted toward exploiting the time domain because other programs in the Center are pursuing research on parallel optical systems, exploiting optical interconnection and optical devices and materials. Using a general purpose computing architecture as the focus, we are developing design techniques, tools and architecture for operation at the speed of light limit. Experimental work is being done with the somewhat low speed components currently available but with architectures which will scale up in speed as faster devices are developed. The design algorithms and tools developed for a general purpose, stored program computer are being applied to other systems such as optimally controlled optical communication networks.

  5. Fabrication of self-aligned, nanoscale, complex oxide varactors

    NASA Astrophysics Data System (ADS)

    Fu, Richard X.; Toonen, Ryan C.; Hirsch, Samuel G.; Ivill, Mathew P.; Cole, Melanie W.; Strawhecker, Kenneth E.

    2015-01-01

    Applications in ferroelectric random access memory and superparaelectric devices require the fabrication of ferroelectric capacitors at the nanoscale that exhibit extremely small leakage currents. To systematically study the material-size dependence of ferroelectric varactor performance, arrays of parallel-plate structures have been fabricated with nanoscale dielectric diameters. Electron beam lithography and inductively coupled plasma dry etching have been used to fabricate arrays of ferroelectric varactors using top electrodes as a self-aligned etch mask. Parallel-plate test structures using RF-sputtered Ba0.6Sr0.4TiO3 thin-films were used to optimize the fabrication process. Varactors with diameters down to 20 nm were successfully fabricated. Current-voltage (I-V) characteristics were measured to evaluate the significance of etch-damage and fabrication quality by ensuring low leakage currents through the structures.

  6. Mapping photovoltaic performance with nanoscale resolution

    DOE PAGES

    Kutes, Yasemin; Aguirre, Brandon A.; Bosse, James L.; ...

    2015-10-16

    Photo-conductive AFM spectroscopy (‘pcAFMs’) is proposed as a high-resolution approach for investigating nanostructured photovoltaics, uniquely providing nanoscale maps of photovoltaic (PV) performance parameters such as the short circuit current, open circuit voltage, maximum power, or fill factor. The method is demonstrated with a stack of 21 images acquired during in situ illumination of micropatterned polycrystalline CdTe/CdS, providing more than 42,000 I/V curves spatially separated by ~5 nm. For these CdTe/CdS microcells, the calculated photoconduction ranges from 0 to 700 picoSiemens (pS) upon illumination with ~1.6 suns, depending on location and biasing conditions. Mean short circuit currents of 2 pA, maximummore » powers of 0.5 pW, and fill factors of 30% are determined. The mean voltage at which the detected photocurrent is zero is determined to be 0.7 V. Significantly, enhancements and reductions in these more commonly macroscopic PV performance metrics are observed to correlate with certain grains and grain boundaries, and are confirmed to be independent of topography. Furthermore, these results demonstrate the benefits of nanoscale resolved PV functional measurements, reiterate the importance of microstructural control down to the nanoscale for 'PV devices, and provide a widely applicable new approach for directly investigating PV materials.« less

  7. Functional Carbon Nanocomposite, Optoelectronic, and Catalytic Coatings

    NASA Astrophysics Data System (ADS)

    Liang, Yu Teng

    Over the past couple decades, fundamental research into carbon nanomaterials has produced a steady stream of groundbreaking physical science. Their record setting mechanical strength, chemical stability, and optoelectronic performance have fueled many optimistic claims regarding the breadth and pace of carbon nanotube and graphene integration. However, present synthetic, processing, and economic constraints have precluded these materials from many practical device applications. To overcome these limitations, novel synthetic techniques, processing methodologies, device geometries, and mechanistic insight were developed in this dissertation. The resulting advancements in material production and composite device performance have brought carbon nanomaterials ever closer to commercial implementation. For improved materials processing, vacuum co-deposition was first demonstrated as viable technique for forming carbon nanocomposite films without property distorting covalent modifications. Co-deposited nanoparticle, carbon nanotube, and graphene composite films enabled rapid device prototyping and compositional optimization. Cellulosic polymer stabilizers were then shown to be highly effective carbon nanomaterial dispersants, improving graphene production yields by two orders of magnitude in common organic solvents. By exploiting polarity interactions, iterative solvent exchange was used to further increase carbon nanomaterial dispersion concentrations by an additional order of magnitude, yielding concentrated inks. On top of their low causticity, these cellulosic nanomaterial inks have highly tunable viscosities, excellent film forming capacity, and outstanding thermal stability. These processing characteristics enable the efficient scaling of carbon nanomaterial coatings and device production using existing roll-to-roll fabrication techniques. Utilizing these process improvements, high-performance gas sensing, energy storage, transparent conductor, and photocatalytic

  8. An Electronic Structure Approach to Charge Transfer and Transport in Molecular Building Blocks for Organic Optoelectronics

    NASA Astrophysics Data System (ADS)

    Hendrickson, Heidi Phillips

    A fundamental understanding of charge separation in organic materials is necessary for the rational design of optoelectronic devices suited for renewable energy applications and requires a combination of theoretical, computational, and experimental methods. Density functional theory (DFT) and time-dependent (TD)DFT are cost effective ab-initio approaches for calculating fundamental properties of large molecular systems, however conventional DFT methods have been known to fail in accurately characterizing frontier orbital gaps and charge transfer states in molecular systems. In this dissertation, these shortcomings are addressed by implementing an optimally-tuned range-separated hybrid (OT-RSH) functional approach within DFT and TDDFT. The first part of this thesis presents the way in which RSH-DFT addresses the shortcomings in conventional DFT. Environmentally-corrected RSH-DFT frontier orbital energies are shown to correspond to thin film measurements for a set of organic semiconducting molecules. Likewise, the improved RSH-TDDFT description of charge transfer excitations is benchmarked using a model ethene dimer and silsesquioxane molecules. In the second part of this thesis, RSH-DFT is applied to chromophore-functionalized silsesquioxanes, which are currently investigated as candidates for building blocks in optoelectronic applications. RSH-DFT provides insight into the nature of absorptive and emissive states in silsesquioxanes. While absorption primarily involves transitions localized on one chromophore, charge transfer between chromophores and between chromophore and silsesquioxane cage have been identified. The RSH-DFT approach, including a protocol accounting for complex environmental effects on charge transfer energies, was tested and validated against experimental measurements. The third part of this thesis addresses quantum transport through nano-scale junctions. The ability to quantify a molecular junction via spectroscopic methods is crucial to their

  9. Optoelectronics technologies for Virtual Reality systems

    NASA Astrophysics Data System (ADS)

    Piszczek, Marek; Maciejewski, Marcin; Pomianek, Mateusz; Szustakowski, Mieczysław

    2017-08-01

    Solutions in the field of virtual reality are very strongly associated with optoelectronic technologies. This applies to both process design and operation of VR applications. Technologies such as 360 cameras and 3D scanners significantly improve the design work. What is more, HMD displays with high field of view or optoelectronic Motion Capture systems and 3D cameras guarantee an extraordinary experience in immersive VR applications. This article reviews selected technologies from the perspective of their use in a broadly defined process of creating and implementing solutions for virtual reality. There is also the ability to create, modify and adapt new approaches that show team own work (SteamVR tracker). Most of the introduced examples are effectively used by authors to create different VR applications. The use of optoelectronic technology in virtual reality is presented in terms of design and operation of the system as well as referring to specific applications. Designers and users of VR systems should take a close look on new optoelectronics solutions, as they can significantly contribute to increased work efficiency and offer completely new opportunities for virtual world reception.

  10. Amino-functionalized sub-40 nm ultrathin Ag/ZnO transparent electrodes for flexible polymer dispersed liquid crystal devices

    NASA Astrophysics Data System (ADS)

    Huang, Jinhua; Lu, Yuehui; Wu, Wenxuan; Li, Jia; Zhang, Xianpeng; Zhu, Chaoting; Yang, Ye; Xu, Feng; Song, Weijie

    2017-11-01

    Various flexible transparent conducting electrodes (FTCEs) have been studied for promising applications in flexible optoelectronic devices, but there are still challenges in achieving higher transparency and conductivity, lower thickness, better mechanical flexibility, and lower preparation temperatures. In this work, we prepared a sub-40 nm Ag(9 nm)/ZnO(30 nm) FTCE at room temperature, where each layer played a relatively independent role in the tailoring of the optoelectronic properties. A continuous and smooth 9-nm Ag thin film was grown on amino-functionalized glass and polyethylene terephthalate (PET) substrates to provide good conductivity. A 30-nm ZnO cladding, as an antireflection layer, further improved the transmittance while hardly affecting the conductivity. The room-temperature grown sub-40 nm Ag/ZnO thin films on PET substrate exhibited a transmittance of 88.6% at 550 nm and a sheet resistance of 7.6 Ω.sq-1, which were superior to those of the commercial ITO. The facile preparation benefits the integration of FTCEs into various flexible optoelectronic devices, where the excellent performance of the sub-40 nm Ag/ZnO FTCEs in a flexible polymer dispersed liquid crystal device was demonstrated. Sub-40 nm Ag/ZnO FTCEs that have the characteristics of simple structure, room-temperature preparation, and easily tailored optoelectronic properties would provide flexible optoelectronic devices with more degrees of freedom.

  11. Symmetric Gain Optoelectronic Mixers for LADAR

    DTIC Science & Technology

    2008-12-01

    photodetector in the receiver is used as an optoelectronic mixer (OEM). Adding gain to the optoelectronic mixer allows the following transimpedance ...output is the low frequency difference signal, several orders of magnitude lower than the LO signal. Therefore, the gain of the transimpedance ... amplifier (TZA) following the photodetector can be increased, improving LADAR range. The metal-semiconductor- metal (MSM) Schottky detector is such a

  12. Reduced Graphene Oxide-Cadmium Zinc Sulfide Nanocomposite with Controlled Band Gap for Large-Area Thin-Film Optoelectronic Device Application

    NASA Astrophysics Data System (ADS)

    Ibrahim, Sk; Chakraborty, Koushik; Pal, Tanusri; Ghosh, Surajit

    2017-12-01

    Herein, we report the one pot single step solvothermal synthesis of reduced grapheme oxide-cadmium zinc sulfide (RGO-Cd0.5Zn0.5S) composite. The reduction in graphene oxide (GO), synthesis of Cd0.5Zn0.5S (mentioned as CdZnS in the text) nanorod and decoration of CdZnS nanorods onto RGO sheet were done simultaneously. The structural, morphological and optical properties were studied thoroughly by different techniques, such as XRD, TEM, UV-Vis and PL. The PL intensity of CdZnS nanorods quenches significantly after the attachment of RGO, which confirms photoinduced charge transformation from CdZnS nanorods to RGO sheet through the interface of RGO-CdZnS. An excellent photocurrent generation in RGO-CdZnS thin-film device has been observed under simulated solar light irradiation. The photocurrent as well as photosensitivity increases linearly with the solar light intensity for all the composites. Our study establishes that the synergistic effect of RGO and CdZnS in the composite is capable of getting promising applications in the field of optoelectronic devising.

  13. Crystalline Nanoporous Frameworks: a Nanolaboratory for Probing Excitonic Device Concepts.

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Allendorf, Mark D.; Azoulay, Jason; Ford, Alexandra Caroline

    2014-09-01

    Electro-optical organic materials hold great promise for the development of high-efficiency devices based on exciton formation and dissociation, such as organic photovoltaics (OPV) and organic light-emitting devices (OLEDs). However, the external quantum efficiency (EQE) of both OPV and OLEDs must be improved to make these technologies economical. Efficiency rolloff in OLEDs and inability to control morphology at key OPV interfaces both reduce EQE. Only by creating materials that allow manipulation and control of the intimate assembly and communication between various nanoscale excitonic components can we hope to first understand and then engineer the system to allow these materials to reachmore » their potential. The aims of this proposal are to: 1) develop a paradigm-changing platform for probing excitonic processes composed of Crystalline Nanoporous Frameworks (CNFs) infiltrated with secondary materials (such as a complimentary semiconductor); 2) use them to probe fundamental aspects of excitonic processes; and 3) create prototype OPVs and OLEDs using infiltrated CNF as active device components. These functional platforms will allow detailed control of key interactions at the nanoscale, overcoming the disorder and limited synthetic control inherent in conventional organic materials. CNFs are revolutionary inorganic-organic hybrid materials boasting unmatched synthetic flexibility that allow tuning of chemical, geometric, electrical, and light absorption/generation properties. For example, bandgap engineering is feasible and polyaromatic linkers provide tunable photon antennae; rigid 1-5 nm pores provide an oriented, intimate host for triplet emitters (to improve light emission in OLEDs) or secondary semiconducting polymers (creating a charge-separation interface in OPV). These atomically engineered, ordered structures will enable critical fundamental questions to be answered concerning charge transport, nanoscale interfaces, and exciton behavior that are

  14. Manipulating and Visualizing Molecular Interactions in Customized Nanoscale Spaces

    NASA Astrophysics Data System (ADS)

    Stabile, Francis; Henkin, Gil; Berard, Daniel; Shayegan, Marjan; Leith, Jason; Leslie, Sabrina

    We present a dynamically adjustable nanofluidic platform for formatting the conformations of and visualizing the interaction kinetics between biomolecules in solution, offering new time resolution and control of the reaction processes. This platform extends convex lens-induced confinement (CLiC), a technique for imaging molecules under confinement, by introducing a system for in situ modification of the chemical environment; this system uses a deep microchannel to diffusively exchange reagents within the nanoscale imaging region, whose height is fixed by a nanopost array. To illustrate, we visualize and manipulate salt-induced, surfactant-induced, and enzyme-induced reactions between small-molecule reagents and DNA molecules, where the conformations of the DNA molecules are formatted by the imposed nanoscale confinement. By using nanofabricated, nonabsorbing, low-background glass walls to confine biomolecules, our nanofluidic platform facilitates quantitative exploration of physiologically and biotechnologically relevant processes at the nanoscale. This device provides new kinetic information about dynamic chemical processes at the single-molecule level, using advancements in the CLiC design including a microchannel-based diffuser and postarray-based dialysis slit.

  15. Optical Materials and Device Fabrication for Chemical Sensing on the Nanoscale

    DTIC Science & Technology

    2005-07-15

    science, and optical and laser spectroscopy during the past year. Ms. Aetna W. Wun , who hails from the University of California at San Diego, is a...Sensing on the Nanoscale" Aetna W. Wun , Preston T. Snee, YinThai Chan, Moungi G. Bawendi and Daniel G. Nocera, J Mater. Chem. 2005, Fluorescent... Ted Koppel: "Little Black Box", 25 August 2003. The show highlighted recent research advances from the Nocera group. In addition, the Nocera research

  16. Magnetic domain wall engineering in a nanoscale permalloy junction

    NASA Astrophysics Data System (ADS)

    Wang, Junlin; Zhang, Xichao; Lu, Xianyang; Zhang, Jason; Yan, Yu; Ling, Hua; Wu, Jing; Zhou, Yan; Xu, Yongbing

    2017-08-01

    Nanoscale magnetic junctions provide a useful approach to act as building blocks for magnetoresistive random access memories (MRAM), where one of the key issues is to control the magnetic domain configuration. Here, we study the domain structure and the magnetic switching in the Permalloy (Fe20Ni80) nanoscale magnetic junctions with different thicknesses by using micromagnetic simulations. It is found that both the 90-° and 45-° domain walls can be formed between the junctions and the wire arms depending on the thickness of the device. The magnetic switching fields show distinct thickness dependencies with a broad peak varying from 7 nm to 22 nm depending on the junction sizes, and the large magnetic switching fields favor the stability of the MRAM operation.

  17. Methods and devices for fabricating and assembling printable semiconductor elements

    DOEpatents

    Nuzzo, Ralph G; Rogers, John A; Menard, Etienne; Lee, Keon Jae; Khang, Dahl-Young; Sun, Yugang; Meitl, Matthew; Zhu, Zhengtao

    2014-03-04

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  18. Methods and devices for fabricating and assembling printable semiconductor elements

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Nuzzo, Ralph G.; Rogers, John A.; Menard, Etienne

    The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

  19. Spatial Manipulation of Heat Flow by Surface Boundaries at the Nanoscale

    NASA Astrophysics Data System (ADS)

    Malhotra, Abhinav; Maldovan, Martin

    The precise manipulation of phonon transport properties is central to controlling thermal transport in semiconductor nanostructures. The physical understanding, prediction, and control of thermal phonon heat spectra and thermal conductivity accumulation functions - which establish the proportion of heat transported by phonons with different frequencies and mean-free-paths - has attracted significant attention in recent years. In this talk, we advance the possibilities of manipulating heat by spatially modulating thermal transport in nanostructures. We show that phonon scattering at interfaces impacts the most preferred physical pathway used by heat energy flow in thermal transport in nanostructures. The role of introducing boundaries with different surface conditions on resultant thermal flux is presented and methodologies to enhance these spatial modulations are discussed. This talk aims to advance the fundamental understanding on the nature of heat transport at nanoscale with potential applications in multiple research areas ranging from energy materials to optoelectronics.

  20. Ultrasonic imaging using optoelectronic transmitters.

    PubMed

    Emery, C D; Casey, H C; Smith, S W

    1998-04-01

    Conventional ultrasound scanners utilize electronic transmitters and receivers at the scanner with a separate coaxial cable connected to each transducer element in the handle. The number of transducer elements determines the size and weight of the transducer cable assembly that connects the imaging array to the scanner. 2-D arrays that allow new imaging modalities to be introduced significantly increase the channel count making the transducer cable assembly more difficult to handle. Therefore, reducing the size and increasing the flexibility of the transducer cable assembly is a concern. Fiber optics can be used to transmit signals optically and has distinct advantages over standard coaxial cable to increase flexibility and decrease the weight of the transducer cable for larger channel numbers. The use of fiber optics to connect the array and the scanner entails the use of optoelectronics such as detectors and laser diodes to send and receive signals. In transmit, optoelectronics would have to be designed to produce high-voltage wide-bandwidth pulses across the transducer element. In this paper, we describe a 48 channel ultrasound system having 16 optoelectronic transmitters and 32 conventional electronic receivers. We investigated both silicon avalanche photodiodes (APD's) and GaAs lateral photoconductive semiconductor switches (PCSS's) for producing the transmit pulses. A Siemens SI-1200 scanner and a 2.25 MHz linear array were used to compare the optoelectronic system to a conventional electronic transmit system. Transmit signal results and images in tissue mimicking of cysts and tumors are provided for comparison.

  1. Optoelectronic response of a WS2 tubular p-n junction

    NASA Astrophysics Data System (ADS)

    Zhang, Y. J.; Onga, M.; Qin, F.; Shi, W.; Zak, A.; Tenne, R.; Smet, J.; Iwasa, Y.

    2018-07-01

    Due to their favourable and rich electronic and optical properties, group-VI-B transition-metal dichalcogenides (TMDs) have attracted considerable interest. They have earned their position in the materials portfolio of the spintronics and valleytronics communities. The electrical performance of TMDs is enhanced by rolling up the two-dimensional (2D) sheets to form quasi-one-dimensional (1D) tubular structures. The fabrication of p-n junctions out of these tubular TMDs would boost their potential for optoelectronic devices as such junctions represent a fundamental building block. Here, we report the realization of a p-n junction out of a single, isolated WS2-nanotube (WS2-NT). Light-emitting diode operation and photovoltaic behaviour were observed based on such p-n junctions. The emitted light as well as the photovoltaic effect exhibit strong linear polarization characteristics due to the quasi-1D nature. The external quantum efficiency for the photovoltaic effect reaches a value as high as 4.8%, exceeding by far that of 2D TMDs and even approaching the internal quantum efficiency of the 2D TMDs. This efficiency improvement indicates that TMD nanotubes are superior candidates over 2D TMDs for optoelectronic applications.

  2. Visualization of exciton transport in ordered and disordered molecular solids.

    PubMed

    Akselrod, Gleb M; Deotare, Parag B; Thompson, Nicholas J; Lee, Jiye; Tisdale, William A; Baldo, Marc A; Menon, Vinod M; Bulović, Vladimir

    2014-04-16

    Transport of nanoscale energy in the form of excitons is at the core of photosynthesis and the operation of a wide range of nanostructured optoelectronic devices such as solar cells, light-emitting diodes and excitonic transistors. Of particular importance is the relationship between exciton transport and nanoscale disorder, the defining characteristic of molecular and nanostructured materials. Here we report a spatial, temporal and spectral visualization of exciton transport in molecular crystals and disordered thin films. Using tetracene as an archetype molecular crystal, the imaging reveals that exciton transport occurs by random walk diffusion, with a transition to subdiffusion as excitons become trapped. By controlling the morphology of the thin film, we show that this transition to subdiffusive transport occurs at earlier times as disorder is increased. Our findings demonstrate that the mechanism of exciton transport depends strongly on the nanoscale morphology, which has wide implications for the design of excitonic materials and devices.

  3. Single-layer MoS2 - electrical transport properties, devices and circuits

    NASA Astrophysics Data System (ADS)

    Kis, Andras

    2013-03-01

    After quantum dots, nanotubes and nanowires, two-dimensional materials in the shape of sheets with atomic-scale thickness represent the newest addition to the diverse family of nanoscale materials. Single-layer molybdenum disulphide (MoS2) , a direct-gap semiconductor is a typical example of these new graphene-like materials that can be produced using the adhesive-tape based cleavage technique originally developed for graphene. The presence of a band gap in MoS2 allowed us to fabricate transistors that can be turned off and operate with negligible leakage currents. Furthermore, our transistors can be used to build simple integrated circuits capable of performing logic operations and amplifying small signals. I will report here on our latest 2D MoS2 transistors with improved performance due to enhanced electrostatic control, showing improved currents and transconductance as well as current saturation. We also record electrical breakdown of our devices and find that MoS2 can support very high current densities, exceeding the current carrying capacity of copper by a factor of fifty. Furthermore, I will show optoelectronic devices incorporating MoS2 with sensitivity that surpasses similar graphene devices by several orders of magnitude. Finally, I will present temperature-dependent electrical transport and mobility measurements that show clear mobility enhancement due to the suppression of the influence of charge impurities with the deposition of an HfO2 capping layer. Financially supported by grants from Swiss National Science Foundation, EU-FP7, EU-ERC and Swiss Nanoscience Institute.

  4. Investigation of graphene-based nanoscale radiation sensitive materials

    NASA Astrophysics Data System (ADS)

    Robinson, Joshua A.; Wetherington, Maxwell; Hughes, Zachary; LaBella, Michael, III; Bresnehan, Michael

    2012-06-01

    Current state-of-the-art nanotechnology offers multiple benefits for radiation sensing applications. These include the ability to incorporate nano-sized radiation indicators into widely used materials such as paint, corrosion-resistant coatings, and ceramics to create nano-composite materials that can be widely used in everyday life. Additionally, nanotechnology may lead to the development of ultra-low power, flexible detection systems that can be embedded in clothing or other systems. Graphene, a single layer of graphite, exhibits exceptional electronic and structural properties, and is being investigated for high-frequency devices and sensors. Previous work indicates that graphene-oxide (GO) - a derivative of graphene - exhibits luminescent properties that can be tailored based on chemistry; however, exploration of graphene-oxide's ability to provide a sufficient change in luminescent properties when exposed to gamma or neutron radiation has not been carried out. We investigate the mechanisms of radiation-induced chemical modifications and radiation damage induced shifts in luminescence in graphene-oxide materials to provide a fundamental foundation for further development of radiation sensitive detection architectures. Additionally, we investigate the integration of hexagonal boron nitride (hBN) with graphene-based devices to evaluate radiation induced conductivity in nanoscale devices. Importantly, we demonstrate the sensitivity of graphene transport properties to the presence of alpha particles, and discuss the successful integration of hBN with large area graphene electrodes as a means to provide the foundation for large-area nanoscale radiation sensors.

  5. Optoelectronic Integration

    DTIC Science & Technology

    1992-03-20

    34 Interband Transitions in InGaAs/GaAs Strained Layer Superlattices ," J. of Vac. Sci and Technol. B, Vol. 7(5), pp. 1106-1110, 1989. 33 B. Kh...2 II. C. Resonant Cavity-Enhanced Photodetectors ................................ .............. 3 II. D. Wavelength Selective Optoelectronic...Simultions of Electronic States in Semiconductor Quantum Wells and Superlattices under Electrical Field ................................ ....... 5 II. G . G

  6. From Lab to Fab: Developing a Nanoscale Delivery Tool for Scalable Nanomanufacturing

    NASA Astrophysics Data System (ADS)

    Safi, Asmahan A.

    The emergence of nanomaterials with unique properties at the nanoscale over the past two decades carries a capacity to impact society and transform or create new industries ranging from nanoelectronics to nanomedicine. However, a gap in nanomanufacturing technologies has prevented the translation of nanomaterial into real-world commercialized products. Bridging this gap requires a paradigm shift in methods for fabricating structured devices with a nanoscale resolution in a repeatable fashion. This thesis explores the new paradigms for fabricating nanoscale structures devices and systems for high throughput high registration applications. We present a robust and scalable nanoscale delivery platform, the Nanofountain Probe (NFP), for parallel direct-write of functional materials. The design and microfabrication of NFP is presented. The new generation addresses the challenges of throughput, resolution and ink replenishment characterizing tip-based nanomanufacturing. To achieve these goals, optimized probe geometry is integrated to the process along with channel sealing and cantilever bending. The capabilities of the newly fabricated probes are demonstrated through two type of delivery: protein nanopatterning and single cell nanoinjection. The broad applications of the NFP for single cell delivery are investigated. An external microfluidic packaging is developed to enable delivery in liquid environment. The system is integrated to a combined atomic force microscope and inverted fluorescence microscope. Intracellular delivery is demonstrated by injecting a fluorescent dextran into Hela cells in vitro while monitoring the injection forces. Such developments enable in vitro cellular delivery for single cell studies and high throughput gene expression. The nanomanufacturing capabilities of NFPs are explored. Nanofabrication of carbon nanotube-based electronics presents all the manufacturing challenges characterizing of assembling nanomaterials precisely onto devices. The

  7. Two-dimensional Cu2Si sheet: a promising electrode material for nanoscale electronics.

    PubMed

    Yam, Kah Meng; Guo, Na; Zhang, Chun

    2018-06-15

    Building electronic devices on top of two-dimensional (2D) materials has recently become one of most interesting topics in nanoelectronics. Finding high-performance 2D electrode materials is one central issue in 2D nanoelectronics. In the current study, based on first-principles calculations, we compare the electronic and transport properties of two nanoscale devices. One device consists of two single-atom-thick planar Cu 2 Si electrodes, and a nickel phthalocyanine (NiPc) molecule in the middle. The other device is made of often-used graphene electrodes and a NiPc molecule. Planer Cu 2 Si is a new type of 2D material that was recently predicted to exist and be stable under room temperature [11]. We found that at low bias voltages, the electric current through the Cu 2 Si-NiPc-Cu 2 Si junction is about three orders higher than that through graphene-NiPc-graphene. Detailed analysis shows that the surprisingly high conductivity of Cu 2 Si-NiPc-Cu 2 Si originates from the mixing of the Cu 2 Si state near Fermi energy and the highest occupied molecular orbital of NiPc. These results suggest that 2D Cu 2 Si may be an excellent candidate for electrode materials for future nanoscale devices.

  8. Two-dimensional Cu2Si sheet: a promising electrode material for nanoscale electronics

    NASA Astrophysics Data System (ADS)

    Meng Yam, Kah; Guo, Na; Zhang, Chun

    2018-06-01

    Building electronic devices on top of two-dimensional (2D) materials has recently become one of most interesting topics in nanoelectronics. Finding high-performance 2D electrode materials is one central issue in 2D nanoelectronics. In the current study, based on first-principles calculations, we compare the electronic and transport properties of two nanoscale devices. One device consists of two single-atom-thick planar Cu2Si electrodes, and a nickel phthalocyanine (NiPc) molecule in the middle. The other device is made of often-used graphene electrodes and a NiPc molecule. Planer Cu2Si is a new type of 2D material that was recently predicted to exist and be stable under room temperature [11]. We found that at low bias voltages, the electric current through the Cu2Si–NiPc–Cu2Si junction is about three orders higher than that through graphene–NiPc–graphene. Detailed analysis shows that the surprisingly high conductivity of Cu2Si–NiPc–Cu2Si originates from the mixing of the Cu2Si state near Fermi energy and the highest occupied molecular orbital of NiPc. These results suggest that 2D Cu2Si may be an excellent candidate for electrode materials for future nanoscale devices.

  9. Nanoscale solid-state cooling: a review.

    PubMed

    Ziabari, Amirkoushyar; Zebarjadi, Mona; Vashaee, Daryoosh; Shakouri, Ali

    2016-09-01

    The recent developments in nanoscale solid-state cooling are reviewed. This includes both theoretical and experimental studies of different physical concepts, as well as nanostructured material design and device configurations. We primarily focus on thermoelectric, thermionic and thermo-magnetic coolers. Particular emphasis is given to the concepts based on metal-semiconductor superlattices, graded materials, non-equilibrium thermoelectric devices, Thomson coolers, and photon assisted Peltier coolers as promising methods for efficient solid-state cooling. Thermomagnetic effects such as magneto-Peltier and Nernst-Ettingshausen cooling are briefly described and recent advances and future trends in these areas are reviewed. The ongoing progress in solid-state cooling concepts such as spin-calorimetrics, electrocalorics, non-equilibrium/nonlinear Peltier devices, superconducting junctions and two-dimensional materials are also elucidated and practical achievements are reviewed. We explain the thermoreflectance thermal imaging microscopy and the transient Harman method as two unique techniques developed for characterization of thermoelectric microrefrigerators. The future prospects for solid-state cooling are briefly summarized.

  10. Limit characteristics of digital optoelectronic processor

    NASA Astrophysics Data System (ADS)

    Kolobrodov, V. G.; Tymchik, G. S.; Kolobrodov, M. S.

    2018-01-01

    In this article, the limiting characteristics of a digital optoelectronic processor are explored. The limits are defined by diffraction effects and a matrix structure of the devices for input and output of optical signals. The purpose of a present research is to optimize the parameters of the processor's components. The developed physical and mathematical model of DOEP allowed to establish the limit characteristics of the processor, restricted by diffraction effects and an array structure of the equipment for input and output of optical signals, as well as to optimize the parameters of the processor's components. The diameter of the entrance pupil of the Fourier lens is determined by the size of SLM and the pixel size of the modulator. To determine the spectral resolution, it is offered to use a concept of an optimum phase when the resolved diffraction maxima coincide with the pixel centers of the radiation detector.

  11. Interaction of Chemical Agents with Nanoscale Molecular Junctions

    DTIC Science & Technology

    2011-08-01

    thiS burden to Department of Defense. Washilgton Headqualters Services. Directorate for lnformatie~n Operations and Reports (07()4.()188), 1215...The source of these contaminants were determined to be coming from the glovebox auxiliary vacuum pump, which normally operates continuously for...SAM- NHi NH2-SAM-Gold] molecular junction for analysis. In order to perform electron transport analysis of our nanoscale devices in a "real world

  12. SPECIAL ISSUE ON OPTICAL PROCESSING OF INFORMATION: Optoelectronic processors with scanning CCD photodetectors

    NASA Astrophysics Data System (ADS)

    Esepkina, N. A.; Lavrov, A. P.; Anan'ev, M. N.; Blagodarnyi, V. S.; Ivanov, S. I.; Mansyrev, M. I.; Molodyakov, S. A.

    1995-10-01

    Two new types of optoelectronic radio-signal processors were investigated. Charge-coupled device (CCD) photodetectors are used in these processors under continuous scanning conditions, i.e. in a time delay and storage mode. One of these processors is based on a CCD photodetector array with a reference-signal amplitude transparency and the other is an adaptive acousto-optical signal processor with linear frequency modulation. The processor with the transparency performs multichannel discrete—analogue convolution of an input signal with a corresponding kernel of the transformation determined by the transparency. If a light source is an array of light-emitting diodes of special (stripe) geometry, the optical stages of the processor can be made from optical fibre components and the whole processor then becomes a rigid 'sandwich' (a compact hybrid optoelectronic microcircuit). A report is given also of a study of a prototype processor with optical fibre components for the reception of signals from a system with antenna aperture synthesis, which forms a radio image of the Earth.

  13. Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics.

    PubMed

    Zhuang, Q D; Alradhi, H; Jin, Z M; Chen, X R; Shao, J; Chen, X; Sanchez, Ana M; Cao, Y C; Liu, J Y; Yates, P; Durose, K; Jin, C J

    2017-03-10

    InAsSb nanowires (NWs) with a high Sb content have potential in the fabrication of advanced silicon-based optoelectronics such as infrared photondetectors/emitters and highly sensitive phototransistors, as well as in the generation of renewable electricity. However, producing optically efficient InAsSb NWs with a high Sb content remains a challenge, and optical emission is limited to 4.0 μm due to the quality of the nanowires. Here, we report, for the first time, the success of high-quality and optically efficient InAsSb NWs enabling silicon-based optoelectronics operating in entirely mid-wavelength infrared. Pure zinc-blende InAsSb NWs were realized with efficient photoluminescence emission. We obtained room-temperature photoluminescence emission in InAs NWs and successfully extended the emission wavelength in InAsSb NWs to 5.1 μm. The realization of this optically efficient InAsSb NW material paves the way to realizing next-generation devices, combining advances in III-V semiconductors and silicon.

  14. Diverse Functionalities of Vertically Stacked Graphene/Single layer n-MoS2/SiO2/p-GaN Heterostructures.

    PubMed

    Perumal, Packiyaraj; Karuppiah, Chelladurai; Liao, Wei-Cheng; Liou, Yi-Rou; Liao, Yu-Ming; Chen, Yang-Fang

    2017-08-30

    Integrating different dimentional materials on vertically stacked p-n hetero-junctions have facinated a considerable scrunity and can open up excellent feasibility with various functionalities in opto-electronic devices. Here, we demonstrate that vertically stacked p-GaN/SiO 2 /n-MoS 2 /Graphene heterostructures enable to exhibit prominent dual opto-electronic characteristics, including efficient photo-detection and light emission, which represents the emergence of a new class of devices. The photoresponsivity was found to achieve as high as ~10.4 AW -1 and the detectivity and external quantum efficiency were estimated to be 1.1 × 10 10 Jones and ~30%, respectively. These values are superier than most reported hererojunction devices. In addition, this device exhibits as a self-powered photodetector, showing a high responsivity and fast response speed. Moreover, the device demonstrates the light emission with low turn-on voltage (~1.0 V) which can be realized by electron injection from graphene electrode and holes from GaN film into monolayer MoS 2 layer. These results indicate that with a suitable choice of band alignment, the vertical stacking of materials with different dimentionalities could be significant potential for integration of highly efficient heterostructures and open up feasible pathways towards integrated nanoscale multi-functional optoelectronic devices for a variety of applications.

  15. Heat transfer across the interface between nanoscale solids and gas.

    PubMed

    Cheng, Chun; Fan, Wen; Cao, Jinbo; Ryu, Sang-Gil; Ji, Jie; Grigoropoulos, Costas P; Wu, Junqiao

    2011-12-27

    When solid materials and devices scale down in size, heat transfer from the active region to the gas environment becomes increasingly significant. We show that the heat transfer coefficient across the solid-gas interface behaves very differently when the size of the solid is reduced to the nanoscale, such as that of a single nanowire. Unlike for macroscopic solids, the coefficient is strongly pressure dependent above ∼10 Torr, and at lower pressures it is much higher than predictions of the kinetic gas theory. The heat transfer coefficient was measured between a single, free-standing VO(2) nanowire and surrounding air using laser thermography, where the temperature distribution along the VO(2) nanowire was determined by imaging its domain structure of metal-insulator phase transition. The one-dimensional domain structure along the nanowire results from the balance between heat generation by the focused laser and heat dissipation to the substrate as well as to the surrounding gas, and thus serves as a nanoscale power-meter and thermometer. We quantified the heat loss rate across the nanowire-air interface, and found that it dominates over all other heat dissipation channels for small-diameter nanowires near ambient pressure. As the heat transfer across the solid-gas interface is nearly independent of the chemical identity of the solid, the results reveal a general scaling relationship for gaseous heat dissipation from nanostructures of all solid materials, which is applicable to nanoscale electronic and thermal devices exposed to gaseous environments.

  16. Optoelectronic-cache memory system architecture.

    PubMed

    Chiarulli, D M; Levitan, S P

    1996-05-10

    We present an investigation of the architecture of an optoelectronic cache that can integrate terabit optical memories with the electronic caches associated with high-performance uniprocessors and multiprocessors. The use of optoelectronic-cache memories enables these terabit technologies to provide transparently low-latency secondary memory with frame sizes comparable with disk pages but with latencies that approach those of electronic secondary-cache memories. This enables the implementation of terabit memories with effective access times comparable with the cycle times of current microprocessors. The cache design is based on the use of a smart-pixel array and combines parallel free-space optical input-output to-and-from optical memory with conventional electronic communication to the processor caches. This cache and the optical memory system to which it will interface provide a large random-access memory space that has a lower overall latency than that of magnetic disks and disk arrays. In addition, as a consequence of the high-bandwidth parallel input-output capabilities of optical memories, fault service times for the optoelectronic cache are substantially less than those currently achievable with any rotational media.

  17. Voltage control of nanoscale magnetoelastic elements: theory and experiments (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Carman, Gregory P.

    2015-09-01

    Electromagnetic devices rely on electrical currents to generate magnetic fields. While extremely useful this approach has limitations in the small-scale. To overcome the scaling problem, researchers have tried to use electric fields to manipulate a magnetic material's intrinsic magnetization (i.e. multiferroic). The strain mediated class of multiferroics offers up to 70% of energy transduction using available piezoelectric and magnetoelastic materials. While strain mediated multiferroic is promising, few studies exist on modeling/testing of nanoscale magnetic structures. This talk presents motivation, analytical models, and experimental data on electrical control of nanoscale single magnetic domain structures. This research is conducted in a NSF Engineering Research Center entitled Translational Applications for Nanoscale Multiferroics TANMS. The models combine micromagnetics (Landau-Lifshitz-Gilbert) with elastodynamics using the electrostatic approximation producing eight fully coupled nonlinear partial differential equations. Qualitative and quantitative verification is achieved with direct comparison to experimental data. The modeling effort guides fabrication and testing on three elements, i.e. nanoscale rings (onion states), ellipses (single domain reorientation), and superparamagnetic elements. Experimental results demonstrate electrical and deterministic control of the magnetic states in the 5-500 nm structures as measured with Photoemission Electron Microscopy PEEM, Magnetic Force Microscopy MFM, or Lorentz Transmission Electron Microscopy TEM. These data strongly suggests efficient control of nanoscale magnetic spin states is possible with voltage.

  18. Experimental, theoretical, and device application development of nanoscale focused electron-beam-induced deposition

    NASA Astrophysics Data System (ADS)

    Randolph, Steven Jeffrey

    Electron-beam-induced deposition (EBID) is a highly versatile nanofabrication technique that allows for growth of a variety of materials with nanoscale precision and resolution. While several applications and studies of EBID have been reported and published, there is still a significant lack of understanding of the complex mechanisms involved in the process. Consequently, EBID process control is, in general, limited and certain common experimental results regarding nanofiber growth have yet to be fully explained. Such anomalous results have been addressed in this work both experimentally and by computer simulation. Specifically, a correlation between SiOx nanofiber deposition observations and the phenomenon of electron beam heating (EBH) was shown by comparison of thermal computer models and experimental results. Depending on the beam energy, beam current, and nanostructure geometry, the heat generated can be substantial and may influence the deposition rate. Temperature dependent EBID growth experiments qualitatively verified the results of the EBH model. Additionally, EBID was used to produce surface image layers for maskless, direct-write lithography (MDL). A single layer process used directly written SiOx features as a masking layer for amorphous silicon thin films. A bilayer process implemented a secondary masking layer consisting of standard photoresist into which a pattern---directly written by EBID tungsten---was transferred. The single layer process was found to be extremely sensitive to the etch selectivity of the plasma etch. In the bilayer process, EBID tungsten was written onto photoresist and the pattern transferred by means of oxygen plasma dry development following a brief refractory descum. Conditions were developed to reduce the spatial spread of electrons in the photoresist layer and obtain ˜ 35 nm lines. Finally, an EBID-based technique for field emitter repair was applied to the Digital Electrostatically focused e-beam Array Lithography (DEAL

  19. Overview of nanoscale NEXAFS performed with soft X-ray microscopes.

    PubMed

    Guttmann, Peter; Bittencourt, Carla

    2015-01-01

    Today, in material science nanoscale structures are becoming more and more important. Not only for the further miniaturization of semiconductor devices like carbon nanotube based transistors, but also for newly developed efficient energy storage devices, gas sensors or catalytic systems nanoscale and functionalized materials have to be analysed. Therefore, analytical tools like near-edge X-ray absorption fine structure (NEXAFS) spectroscopy has to be applied on single nanostructures. Scanning transmission X-ray microscopes (STXM) as well as full-field transmission X-ray microscopes (TXM) allow the required spatial resolution to study individual nanostructures. In the soft X-ray energy range only STXM was used so far for NEXAFS studies. Due to its unique setup, the TXM operated by the Helmholtz-Zentrum Berlin (HZB) at the electron storage ring BESSY II is the first one in the soft X-ray range which can be used for NEXAFS spectroscopy studies which will be shown in this review. Here we will give an overview of the different microscopes used for NEXAFS studies and describe their advantages and disadvantages for different samples.

  20. Transparent heat-spreader for optoelectronic applications

    DOEpatents

    Minano, Juan Carlos; Benitez, Pablo

    2014-11-04

    An optoelectronic cooling system is equally applicable to an LED collimator or a photovoltaic solar concentrator. A transparent fluid conveys heat from the optoelectronic chip to a hollow cover over the system aperture. The cooling system can keep a solar concentrator chip at the same temperature as found for a one-sun flat-plate solar cell. Natural convection or forced circulation can operate to convey heat from the chip to the cover.

  1. The Electrical and Optical Properties of Organometal Halide Perovskites Relevant to Optoelectronic Performance.

    PubMed

    Adinolfi, Valerio; Peng, Wei; Walters, Grant; Bakr, Osman M; Sargent, Edward H

    2018-01-01

    Organometal halide perovskites are under intense study for use in optoelectronics. Methylammonium and formamidinium lead iodide show impressive performance as photovoltaic materials; a premise that has spurred investigations into light-emitting devices and photodetectors. Herein, the optical and electrical material properties of organometal halide perovskites are reviewed. An overview is given on how the material composition and morphology are tied to these properties, and how these properties ultimately affect device performance. Material attributes and techniques used to estimate them are analyzed for different perovskite materials, with a particular focus on the bandgap, mobility, diffusion length, carrier lifetime, and trap-state density. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Electron tunneling in nanoscale electrodes for battery applications

    NASA Astrophysics Data System (ADS)

    Yamada, Hidenori; Narayanan, Rajaram; Bandaru, Prabhakar R.

    2018-03-01

    It is shown that the electrical current that may be obtained from a nanoscale electrochemical system is sensitive to the dimensionality of the electrode and the density of states (DOS). Considering the DOS of lower dimensional systems, such as two-dimensional graphene, one-dimensional nanotubes, or zero-dimensional quantum dots, yields a distinct variation of the current-voltage characteristics. Such aspects go beyond conventional Arrhenius theory based kinetics which are often used in experimental interpretation. The obtained insights may be adapted to other devices, such as solid-state batteries. It is also indicated that electron transport in such devices may be considered through electron tunneling.

  3. Optoelectronic method for detection of cervical intraepithelial neoplasia and cervical cancer

    NASA Astrophysics Data System (ADS)

    Pruski, D.; Przybylski, M.; Kędzia, W.; Kędzia, H.; Jagielska-Pruska, J.; Spaczyński, M.

    2011-12-01

    The optoelectronic method is one of the most promising concepts of biophysical program of the diagnostics of CIN and cervical cancer. Objectives of the work are evaluation of sensitivity and specificity of the optoelectronic method in the detection of CIN and cervical cancer. The paper shows correlation between the pNOR number and sensitivity/specificity of the optoelectronic method. The study included 293 patients with abnormal cervical cytology result and the following examinations: examination with the use of the optoelectronic method — Truscreen, colposcopic examination, and histopathologic biopsy. Specificity of the optoelectronic method for LGSIL was estimated at 65.70%, for HGSIL and squamous cell carcinoma of cervix amounted to 90.38%. Specificity of the optoelectronic method used to confirm lack of cervical pathology was estimated at 78.89%. The field under the ROC curve for the optoelectronic method was estimated at 0.88 (95% CI, 0.84-0.92) which shows high diagnostic value of the test in the detection of HGSIL and squamous cell carcinoma. The optoelectronic method is characterised by high usefulness in the detection of CIN, present in the squamous epithelium and squamous cell carcinoma of cervix.

  4. Remote optoelectronic sensors for monitoring of nonlinear surfaces

    NASA Astrophysics Data System (ADS)

    Petrochenko, Andrew V.; Konyakhin, Igor A.

    2015-05-01

    Actually during construction of the high building actively are used objects of various nonlinear surface, for example, sinuous (parabolic or hyperbolic) roofs of the sport complexes that require automatic deformation control [1]. This type of deformation has character of deflection that is impossible to monitor objectively with just one optoelectronic sensor (which is fixed on this surface). In this article is described structure of remote optoelectronic sensor, which is part of the optoelectronic monitoring system of nonlinear surface, and mathematical transformation of exterior orientation sensor elements in the coordinates of control points.

  5. Can amorphization take place in nanoscale interconnects?

    PubMed

    Kumar, S; Joshi, K L; van Duin, A C T; Haque, M A

    2012-03-09

    The trend of miniaturization has highlighted the problems of heat dissipation and electromigration in nanoelectronic device interconnects, but not amorphization. While amorphization is known to be a high pressure and/or temperature phenomenon, we argue that defect density is the key factor, while temperature and pressure are only the means. For nanoscale interconnects carrying modest current density, large vacancy concentrations may be generated without the necessity of high temperature or pressure due to the large fraction of grain boundaries and triple points. To investigate this hypothesis, we performed in situ transmission electron microscope (TEM) experiments on 200 nm thick (80 nm average grain size) aluminum specimens. Electron diffraction patterns indicate partial amorphization at modest current density of about 10(5) A cm(-2), which is too low to trigger electromigration. Since amorphization results in drastic decrease in mechanical ductility as well as electrical and thermal conductivity, further increase in current density to about 7 × 10(5) A cm(-2) resulted in brittle fracture failure. Our molecular dynamics (MD) simulations predict the formation of amorphous regions in response to large mechanical stresses (due to nanoscale grain size) and excess vacancies at the cathode side of the thin films. The findings of this study suggest that amorphization can precede electromigration and thereby play a vital role in the reliability of micro/nanoelectronic devices.

  6. Nanoscale piezoelectric vibration energy harvester design

    NASA Astrophysics Data System (ADS)

    Foruzande, Hamid Reza; Hajnayeb, Ali; Yaghootian, Amin

    2017-09-01

    Development of new nanoscale devices has increased the demand for new types of small-scale energy resources such as ambient vibrations energy harvesters. Among the vibration energy harvesters, piezoelectric energy harvesters (PEHs) can be easily miniaturized and fabricated in micro and nano scales. This change in the dimensions of a PEH leads to a change in its governing equations of motion, and consequently, the predicted harvested energy comparing to a macroscale PEH. In this research, effects of small scale dimensions on the nonlinear vibration and harvested voltage of a nanoscale PEH is studied. The PEH is modeled as a cantilever piezoelectric bimorph nanobeam with a tip mass, using the Euler-Bernoulli beam theory in conjunction with Hamilton's principle. A harmonic base excitation is applied as a model of the ambient vibrations. The nonlocal elasticity theory is used to consider the size effects in the developed model. The derived equations of motion are discretized using the assumed-modes method and solved using the method of multiple scales. Sensitivity analysis for the effect of different parameters of the system in addition to size effects is conducted. The results show the significance of nonlocal elasticity theory in the prediction of system dynamic nonlinear behavior. It is also observed that neglecting the size effects results in lower estimates of the PEH vibration amplitudes. The results pave the way for designing new nanoscale sensors in addition to PEHs.

  7. Dual-scale topology optoelectronic processor.

    PubMed

    Marsden, G C; Krishnamoorthy, A V; Esener, S C; Lee, S H

    1991-12-15

    The dual-scale topology optoelectronic processor (D-STOP) is a parallel optoelectronic architecture for matrix algebraic processing. The architecture can be used for matrix-vector multiplication and two types of vector outer product. The computations are performed electronically, which allows multiplication and summation concepts in linear algebra to be generalized to various nonlinear or symbolic operations. This generalization permits the application of D-STOP to many computational problems. The architecture uses a minimum number of optical transmitters, which thereby reduces fabrication requirements while maintaining area-efficient electronics. The necessary optical interconnections are space invariant, minimizing space-bandwidth requirements.

  8. Design and function of molecular and bioelectronics devices.

    PubMed

    Krstic, Predrag; Forzani, Erica; Tao, Nongjian; Korkin, Anatoli

    2007-10-24

    from NGC2007. The NGC2007 meeting, which included two days of tutorials (Spring School) and a three day symposium, attracted approximately 400 participants from academic, industrial and governmental research institutions from 41 countries, and covered recent developments in the fabrication and functionality of nano-scale materials, devices and system architecture from advanced CMOS to molecular electronics, photonics, optoelectronics and magnetic materials and devices. The success of the conference would not have been possible without generous support from many sponsors and research institutions, especially from Arizona State University (conference host and co-organizer), International Science and Technology Center (ISTC), National Science Foundation (NSFT), Defense Advanced Research Agency (DARPA), Office of Naval Research, Army Research Office, Computational Chemistry List (CCL), Springer Publisher, City of Tempe, STMicroelectronics, Quarles & Brady LLP, Oak Ridge National Laboratory, Canadian Consulate in Phoenix, Salt River Project (SRP) and many other local, national and international and individual supporters. We would like to acknowledge the shared responsibility for this special issue of Nanotechnology on molecular and bioelectronics, and the highly professional support from Dr Nina Couzin, Dr Alex Wotherspoon and the Nanotechnology team from the IOP Publishing. We also acknowledge the exception made in allowing the publication of some material that is outside the normal scope of Nanotechnology.

  9. Towards nanoscale biomedical devices in medicine: biofunctional and spectroscopic characterization of superparamagnetic nanoparticles.

    PubMed

    Parracino, Antonietta; Gajula, Gnana Prakash; di Gennaro, Ane Kold; Neves-Petersen, Maria Teresa; Rafaelsen, Jens; Petersen, Steffen B

    2011-03-01

    Medical interest in nanotechnology originates from a belief that nanoscale therapeutic devices can be constructed and directed towards its target inside the human body. Such nanodevices can be engineered by coupling superparamagnetic nanoparticle to biomedically active proteins. We hereby report the immobilization of a PhEst, a S-formylglutathione hydrolase from the psychrophilic P. haloplanktis TAC125 onto the gold coated surface of modified superparamagnetic core-shell nanoparticles (Fe(3)O(4)@Au). The synthesis of the nanoparticles is also reported. S-formylglutathione hydrolases constitute a family of ubiquitous enzymes which play a key role in formaldehyde detoxification both in prokaryotes and eukaryotes. PhEst was originally annotated as a putative feruloyl esterase, an enzyme that releases ferulic acid (an antioxidant reactive towards free radicals such as reactive oxygen species) from polysaccharides esters. Dynamic light scattering, scanning electron microscopy with energy dispersive X-ray spectroscopy, UV-visible absorption spectroscopy, fluorescence spectroscopy, magnetic separation technique and enzyme catalytic assay confirmed the chemical composition of the gold covered superparamagnetic nanoparticles, the binding and activity of the enzyme onto the nanoparticles. Activity data in U/ml confirmed that the immobilized enzyme is approximately 2 times more active than the free enzyme in solution. Such particles can be directed with external magnetic fields for bio-separation and focused towards a medical target for therapeutical as well as bio-sensor applications. © Springer Science+Business Media, LLC 2010

  10. Scalability of voltage-controlled filamentary and nanometallic resistance memory devices.

    PubMed

    Lu, Yang; Lee, Jong Ho; Chen, I-Wei

    2017-08-31

    Much effort has been devoted to device and materials engineering to realize nanoscale resistance random access memory (RRAM) for practical applications, but a rational physical basis to be relied on to design scalable devices spanning many length scales is still lacking. In particular, there is no clear criterion for switching control in those RRAM devices in which resistance changes are limited to localized nanoscale filaments that experience concentrated heat, electric current and field. Here, we demonstrate voltage-controlled resistance switching, always at a constant characteristic critical voltage, for macro and nanodevices in both filamentary RRAM and nanometallic RRAM, and the latter switches uniformly and does not require a forming process. As a result, area-scalability can be achieved under a device-area-proportional current compliance for the low resistance state of the filamentary RRAM, and for both the low and high resistance states of the nanometallic RRAM. This finding will help design area-scalable RRAM at the nanoscale. It also establishes an analogy between RRAM and synapses, in which signal transmission is also voltage-controlled.

  11. Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe 2: Enabling nanoscale direct write homo-junctions

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Stanford, Michael; Noh, Joo Hyon; Koehler, Michael R.

    Atomically thin transition metal dichalcogenides (TMDs) are currently receiving significant attention due to their promising opto-electronic properties. Tuning optical and electrical properties of mono and few-layer TMDs, such as tungsten diselenide (WSe 2), by controlling the defects, is an intriguing opportunity to synthesize next generation two dimensional material opto-electronic devices. Here, we report the effects of focused helium ion beam irradiation on the structural, optical and electrical properties of few-layer WSe 2, via high resolution scanning transmission electron microscopy, Raman spectroscopy, and electrical transport measurements. By controlling the ion irradiation dose, we selectively introduce precise defects in few-layer WSe 2more » thereby locally tuning the resistivity and transport properties of the material. Hole transport in the few layer WSe 2 is degraded more severely relative to electron transport after helium ion irradiation. Moreover, by selectively exposing material with the ion beam, we demonstrate a simple yet highly tunable method to create lateral homo-junctions in few layer WSe 2 flakes, which constitutes an important advance towards two dimensional opto-electronic devices.« less

  12. Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe 2: Enabling nanoscale direct write homo-junctions

    DOE PAGES

    Stanford, Michael; Noh, Joo Hyon; Koehler, Michael R.; ...

    2016-06-06

    Atomically thin transition metal dichalcogenides (TMDs) are currently receiving significant attention due to their promising opto-electronic properties. Tuning optical and electrical properties of mono and few-layer TMDs, such as tungsten diselenide (WSe 2), by controlling the defects, is an intriguing opportunity to synthesize next generation two dimensional material opto-electronic devices. Here, we report the effects of focused helium ion beam irradiation on the structural, optical and electrical properties of few-layer WSe 2, via high resolution scanning transmission electron microscopy, Raman spectroscopy, and electrical transport measurements. By controlling the ion irradiation dose, we selectively introduce precise defects in few-layer WSe 2more » thereby locally tuning the resistivity and transport properties of the material. Hole transport in the few layer WSe 2 is degraded more severely relative to electron transport after helium ion irradiation. Moreover, by selectively exposing material with the ion beam, we demonstrate a simple yet highly tunable method to create lateral homo-junctions in few layer WSe 2 flakes, which constitutes an important advance towards two dimensional opto-electronic devices.« less

  13. Nanoscale structure, dynamics and power conversion efficiency correlations in small molecule and oligomer-based photovoltaic devices

    PubMed Central

    Szarko, Jodi M.; Guo, Jianchang; Rolczynski, Brian S.; Chen, Lin X.

    2011-01-01

    Photovoltaic functions in organic materials are intimately connected to interfacial morphologies of molecular packing in films on the nanometer scale and molecular levels. This review will focus on current studies on correlations of nanoscale morphologies in organic photovoltaic (OPV) materials with fundamental processes relevant to photovoltaic functions, such as light harvesting, exciton splitting, exciton diffusion, and charge separation (CS) and diffusion. Small molecule photovoltaic materials will be discussed here. The donor and acceptor materials in small molecule OPV devices can be fabricated in vacuum-deposited, multilayer, crystalline thin films, or spin-coated together to form blended bulk heterojunction (BHJ) films. These two methods result in very different morphologies of the solar cell active layers. There is still a formidable debate regarding which morphology is favored for OPV optimization. The morphology of the conducting films has been systematically altered; using variations of the techniques above, the whole spectrum of film qualities can be fabricated. It is possible to form a highly crystalline material, one which is completely amorphous, or an intermediate morphology. In this review, we will summarize the past key findings that have driven organic solar cell research and the current state-of-the-art of small molecule and conducting oligomer materials. We will also discuss the merits and drawbacks of these devices. Finally, we will highlight some works that directly compare the spectra and morphology of systematically elongated oligothiophene derivatives and compare these oligomers to their polymer counterparts. We hope this review will shed some new light on the morphology differences of these two systems. PMID:22110870

  14. Six Classes of Diffraction-Based Optoelectronic Instruments

    NASA Technical Reports Server (NTRS)

    Spremo, Stevan; Fuhr, Peter; Schipper, John

    2003-01-01

    Six classes of diffraction-based optoelectronic instruments have been invented as means for wavelength-based processing of light. One family of anticipated applications lies in scientific instrumentation for studying chemical and physical reactions that affect and/or are affected differently by light of different wavelengths or different combinations of wavelengths. Another family of anticipated applications lies in optoelectronic communication systems.

  15. Performance of a 300 Mbps 1:16 serial/parallel optoelectronic receiver module

    NASA Technical Reports Server (NTRS)

    Richard, M. A.; Claspy, P. C.; Bhasin, K. B.; Bendett, M. B.

    1990-01-01

    Optical interconnects are being considered for the high speed distribution of multiplexed control signals in GaAs monolithic microwave integrated circuit (MMIC) based phased array antennas. The performance of a hybrid GaAs optoelectronic integrated circuit (OEIC) is described, as well as its design and fabrication. The OEIC converts a 16-bit serial optical input to a 16 parallel line electrical output using an on-board 1:16 demultiplexer and operates at data rates as high as 30b Mbps. The performance characteristics and potential applications of the device are presented.

  16. Co-deposition methods for the fabrication of organic optoelectronic devices

    DOEpatents

    Thompson, Mark E.; Liu, Zhiwei; Wu, Chao

    2016-09-06

    A method for fabricating an OLED by preparing phosphorescent metal complexes in situ is provided. In particular, the method simultaneously synthesizes and deposits copper (I) complexes in an organic light emitting device. Devices comprising such complexes may provide improved photoluminescent and electroluminescent properties.

  17. Porous silver nanosheets: a novel sensing material for nanoscale and microscale airflow sensors

    NASA Astrophysics Data System (ADS)

    Marzbanrad, Ehsan; Zhao, Boxin; Zhou, Norman Y.

    2015-11-01

    Fabrication of nanoscale and microscale machines and devices is one of the goals of nanotechnology. For this purpose, different materials, methods, and devices should be developed. Among them, various types of miniaturized sensors are required to build the nanoscale and microscale systems. In this research, we introduce a new nanoscale sensing material, silver nanosheets, for applications such as nanoscale and microscale gas flow sensors. The silver nanosheets were synthesized through the reduction of silver ions by ascorbic acid in the presence of poly(methacrylic acid) as a capping agent, followed by the growth of silver in the shape of hexagonal and triangular nanoplates, and self-assembly and nanojoining of these structural blocks. At the end of this process, the synthesized nanosheets were floated on the solution. Then, their electrical and thermal stability was demonstrated at 120 °C, and their atmospheric corrosion resistance was clarified at the same temperature range by thermogravimetric analysis. We employed the silver nanosheets in fabricating airflow sensors by scooping out the nanosheets by means of a sensor substrate, drying them at room temperature, and then annealing them at 300 °C for one hour. The fabricated sensors were tested for their ability to measure airflow in the range of 1 to 5 ml min-1, which resulted in a linear response to the airflow with a response and recovery time around 2 s. Moreover, continuous dynamic testing demonstrated that the response of the sensors was stable and hence the sensors can be used for a long time without detectable drift in their response.

  18. Energy Efficient Digital Logic Using Nanoscale Magnetic Devices

    NASA Astrophysics Data System (ADS)

    Lambson, Brian James

    Increasing demand for information processing in the last 50 years has been largely satisfied by the steadily declining price and improving performance of microelectronic devices. Much of this progress has been made by aggressively scaling the size of semiconductor transistors and metal interconnects that microprocessors are built from. As devices shrink to the size regime in which quantum effects pose significant challenges, new physics may be required in order to continue historical scaling trends. A variety of new devices and physics are currently under investigation throughout the scientific and engineering community to meet these challenges. One of the more drastic proposals on the table is to replace the electronic components of information processors with magnetic components. Magnetic components are already commonplace in computers for their information storage capability. Unlike most electronic devices, magnetic materials can store data in the absence of a power supply. Today's magnetic hard disk drives can routinely hold billions of bits of information and are in widespread commercial use. Their ability to function without a constant power source hints at an intrinsic energy efficiency. The question we investigate in this dissertation is whether or not this advantage can be extended from information storage to the notoriously energy intensive task of information processing. Several proof-of-concept magnetic logic devices were proposed and tested in the past decade. In this dissertation, we build on the prior work by answering fundamental questions about how magnetic devices achieve such high energy efficiency and how they can best function in digital logic applications. The results of this analysis are used to suggest and test improvements to nanomagnetic computing devices. Two of our results are seen as especially important to the field of nanomagnetic computing: (1) we show that it is possible to operate nanomagnetic computers at the fundamental

  19. Optoelectronic properties of hybrid diodes based on vanadyl-phthalocyanine and zinc oxide

    NASA Astrophysics Data System (ADS)

    Kiran, M. Raveendra; Ulla, Hidayath; Satyanarayan, M. N.; Umesh, G.

    2017-12-01

    We report an investigation of the optoelectronic properties of a hybrid p-n diode device fabricated using ZnO film prepared by sol-gel technique on which a VOPc organic film is deposited by vacuum evaporation. The charge transport properties of devices having the configurations ITO/ZnO/Al and ITO/ZnO/VOPc/MoO3/Al were investigated at different annealing temperatures (150 °C, 250 °C, 350 °C and 450 °C) by Impedance Spectroscopy (IS). The structural, morphological, optical and electrical properties were also studied at different annealing temperatures. The parameters related to the ITO/ZnO and ZnO/VOPc interfaces such as ideality factor (n), barrier height (qϕB) and rectification ratio (RR) of the diodes were determined from current density-voltage (J-V) characteristics. IS measurements suggest that the large photocurrent generated is due to the decrease in bulk resistance of the device on account of the generation of electron-hole pairs in the organic active layer when exposed to light. The RR and the photocurrent responsivity (Rph) values obtained from the J-V characteristics compare well with those obtained from the IS measurements. It was observed that the absolute value of Rph (470 mA/W) for the p-n diode with ZnO annealed at 350 °C is high compared to that of diodes with different ZnO annealing temperatures. These values also agree well with the values obtained for p-n diodes of other phthalocyanines. Our studies clearly demonstrate that a p-n diode with ZnO film annealed at 350 °C exhibits much better optoelectronic characteristics on account of increased grain size, improved charge injection due to the reduction of barrier height and hence higher (up to 5 orders) charge carrier mobility.

  20. Fluorescence particle detection using microfluidics and planar optoelectronic elements

    NASA Astrophysics Data System (ADS)

    Kettlitz, Siegfried W.; Moosmann, Carola; Valouch, Sebastian; Lemmer, Uli

    2014-05-01

    Detection of fluorescent particles is an integral part of flow cytometry for analysis of selectively stained cells. Established flow cytometer designs achieve great sensitivity and throughput but require bulky and expensive components which prohibit mass production of small single-use point-of-care devices. The use of a combination of innovative technologies such as roll-to-roll printed microuidics with integrated optoelectronic components such as printed organic light emitting diodes and printed organic photodiodes enables tremendous opportunities in cost reduction, miniaturization and new application areas. In order to harvest these benefits, the optical setup requires a redesign to eliminate the need for lenses, dichroic mirrors and lasers. We investigate the influence of geometric parameters on the performance of a thin planar design which uses a high power LED as planar light source and a PIN-photodiode as planar detector. Due to the lack of focusing optics and inferior optical filters, the device sensitivity is not yet on par with commercial state of the art flow cytometer setups. From noise measurements, electronic and optical considerations we deduce possible pathways of improving the device performance. We identify that the sensitivity is either limited by dark noise for very short apertures or by noise from background light for long apertures. We calculate the corresponding crossover length. For the device design we conclude that a low device thickness, low particle velocity and short aperture length are necessary to obtain optimal sensitivity.

  1. Optoelectronic lessons as an interdisciplinary lecture

    NASA Astrophysics Data System (ADS)

    Wu, Dan; Wu, Maocheng; Gu, Jihua

    2017-08-01

    It is noticed that more and more students in college are passionately curious about the optoelectronic technology, since optoelectronic technology has advanced extremely quickly during the last five years and its applications could be found in a lot of domains. The students who are interested in this area may have different educational backgrounds and their majors cover science, engineering, literature and social science, etc. Our course "History of the Optoelectronic Technology" is set up as an interdisciplinary lecture of the "liberal education" at our university, and is available for all students with different academic backgrounds from any departments of our university. The main purpose of the course is to show the interesting and colorful historical aspects of the development of this technology, so that the students from different departments could absorb the academic nourishment they wanted. There are little complex derivations of physical formulas through the whole lecture, but there are still some difficulties about the lecture which is discussed in this paper.

  2. The Properties of Confined Water and Fluid Flow at the Nanoscale

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Schwegler, E; Reed, J; Lau, E

    This project has been focused on the development of accurate computational tools to study fluids in confined, nanoscale geometries, and the application of these techniques to probe the structural and electronic properties of water confined between hydrophilic and hydrophobic substrates, including the presence of simple ions at the interfaces. In particular, we have used a series of ab-initio molecular dynamics simulations and quantum Monte Carlo calculations to build an understanding of how hydrogen bonding and solvation are modified at the nanoscale. The properties of confined water affect a wide range of scientific and technological problems - including protein folding, cell-membranemore » flow, materials properties in confined media and nanofluidic devices.« less

  3. Widely tunable opto-electronic oscillator

    NASA Astrophysics Data System (ADS)

    Maxin, J.; Pillet, G.; Morvan, L.; Dolfi, D.

    2012-03-01

    We present here a widely tunable opto-electronic oscillator (OEO) based on an Er,Yb:glass Dual Frequency Laser (DFL) at 1.53 μm. The beatnote is stabilized with an optical fiber delay line. Compared to classical optoelectronic oscillators, this architecture does not need RF filter and offers a wide tunability. We measured a reduction of 67 dB of the phase noise power spectral density (PSD) at 10 Hz of the carrier optical fiber leading to a level of -27 dBc/Hz with only 100 m optical fiber. Moreover, the scheme offers a microwave signal tunability from 2.5 to 5.5 GHz limited by the RF components.

  4. Two-Dimensional Optoelectronic Graphene Nanoprobes for Neural Nerwork

    NASA Astrophysics Data System (ADS)

    Hong, Tu; Kitko, Kristina; Wang, Rui; Zhang, Qi; Xu, Yaqiong

    2014-03-01

    Brain is the most complex network created by nature, with billions of neurons connected by trillions of synapses through sophisticated wiring patterns and countless modulatory mechanisms. Current methods to study the neuronal process, either by electrophysiology or optical imaging, have significant limitations on throughput and sensitivity. Here, we use graphene, a monolayer of carbon atoms, as a two-dimensional nanoprobe for neural network. Scanning photocurrent measurement is applied to detect the local integration of electrical and chemical signals in mammalian neurons. Such interface between nanoscale electronic device and biological system provides not only ultra-high sensitivity, but also sub-millisecond temporal resolution, owing to the high carrier mobility of graphene.

  5. Multimode resistive switching in nanoscale hafnium oxide stack as studied by atomic force microscopy

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hou, Y., E-mail: houyi@pku.edu.cn, E-mail: lfliu@pku.edu.cn; IMEC, Kapeldreef 75, B-3001 Heverlee; Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001 Heverlee

    2016-07-11

    The nanoscale resistive switching in hafnium oxide stack is investigated by the conductive atomic force microscopy (C-AFM). The initial oxide stack is insulating and electrical stress from the C-AFM tip induces nanometric conductive filaments. Multimode resistive switching can be observed in consecutive operation cycles at one spot. The different modes are interpreted in the framework of a low defect quantum point contact theory. The model implies that the optimization of the conductive filament active region is crucial for the future application of nanoscale resistive switching devices.

  6. Proposal for the detection of magnetic monopoles in spin ice via nanoscale magnetometry

    NASA Astrophysics Data System (ADS)

    Kirschner, Franziska K. K.; Flicker, Felix; Yacoby, Amir; Yao, Norman Y.; Blundell, Stephen J.

    2018-04-01

    We present a proposal for applying nanoscale magnetometry to the search for magnetic monopoles in the spin ice materials holmium and dysprosium titanate. Employing Monte Carlo simulations of the dipolar spin ice model, we find that when cooled to below 1.5 K these materials exhibit a sufficiently low monopole density to enable the direct observation of magnetic fields from individual monopoles. At these temperatures we demonstrate that noise spectroscopy can capture the intrinsic fluctuations associated with monopole dynamics, allowing one to isolate the qualitative effects associated with both the Coulomb interaction between monopoles and the topological constraints implied by Dirac strings. We describe in detail three different nanoscale magnetometry platforms (muon spin rotation, nitrogen-vacancy defects, and nanoscale arrays of superconducting quantum interference devices) that can be used to detect monopoles in these experiments and analyze the advantages of each.

  7. Orbital controlled band gap engineering of tetragonal BiFeO 3 for optoelectronic applications

    DOE PAGES

    Qiao, L.; Zhang, S.; Xiao, H. Y.; ...

    2018-01-01

    Bismuth ferrite BiFeO 3 (BFO) is an important ferroelectric material for thin-film optoelectronic sensing and potential photovoltaic applications. Its relatively large band gap, however, limits the conversion efficiency of BFO absorber-based PV devices. In this study, based on density functional theory calculations we demonstrate that with well-designed Fe-site elemental substitution, tetragonal BFO can exhibit a much lower fundamental band gap than conventional rhombohedral BFO without forming in-gap electronic states and unravel the underlying mechanisms. Cation atomic size, electronegativity, and crystallographic symmetry are evidenced as critical parameters to tailor the metal 3d – oxygen 2p orbital interactions and thus intrinsically modifymore » electronic structure, particularly, the shape and character of the valence and conduction band edges. With reduced band gap, improved mobility, and uncompromised ferroelectric and magnetic ground states, the present results provide a new strategy of designing high symmetry BFO for efficient optoelectronic applications.« less

  8. Orbital controlled band gap engineering of tetragonal BiFeO 3 for optoelectronic applications

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Qiao, L.; Zhang, S.; Xiao, H. Y.

    Bismuth ferrite BiFeO 3 (BFO) is an important ferroelectric material for thin-film optoelectronic sensing and potential photovoltaic applications. Its relatively large band gap, however, limits the conversion efficiency of BFO absorber-based PV devices. In this study, based on density functional theory calculations we demonstrate that with well-designed Fe-site elemental substitution, tetragonal BFO can exhibit a much lower fundamental band gap than conventional rhombohedral BFO without forming in-gap electronic states and unravel the underlying mechanisms. Cation atomic size, electronegativity, and crystallographic symmetry are evidenced as critical parameters to tailor the metal 3d – oxygen 2p orbital interactions and thus intrinsically modifymore » electronic structure, particularly, the shape and character of the valence and conduction band edges. With reduced band gap, improved mobility, and uncompromised ferroelectric and magnetic ground states, the present results provide a new strategy of designing high symmetry BFO for efficient optoelectronic applications.« less

  9. Coupled Optoelectronic Oscillators:. Application to Low-Jitter Pulse Generation

    NASA Astrophysics Data System (ADS)

    Yu, N.; Tu, M.; Maleki, L.

    2002-04-01

    Actively mode-locked Erbium-doped fiber lasers (EDFL) have been studied for generating stable ultra-fast pulses (< 2 ps) at high repetition rates (> 5 GHz) [1,2]. These devices can be compact and environmentally stable, quite suitable for fiber-based high-data-rate communications and optical ultra-fast analog-to-digital conversions (ADC) [3]. The pulse-to-pulse jitter of an EDFL-based pulse generator will be ultimately limited by the phase noise of the mode-locking microwave source (typically electronic frequency synthesizers). On the other hand, opto-electronic oscillators (OEO) using fibers have been demonstrated to generate ultra-low phase noise microwaves at 10 GHz and higher [4]. The overall phase noise of an OEO can be much lower than commercially available synthesizers at the offset-frequency range above 100 Hz. Clearly, ultra-low jitter pulses can be generated by taking advantage of the low phase noise of OEOs. In this paper, we report the progress in developing a new low-jitter pulse generator by combing the two technologies. In our approach, the optical oscillator (mode-locked EDFL) and the microwave oscillator (OEO) are coupled through a common Mach-Zehnder (MZ) modulator, thus named coupled opto-electronic oscillator (COEO) [5]. Based on the results of previous OEO study, we can expect a 10 GHz pulse train with jitters less than 10 fs.

  10. Remote control of nanoscale devices

    NASA Astrophysics Data System (ADS)

    Högberg, Björn

    2018-01-01

    Processes that occur at the nanometer scale have a tremendous impact on our daily lives. Sophisticated evolved nanomachines operate in each of our cells; we also, as a society, increasingly rely on synthetic nanodevices for communication and computation. Scientists are still only beginning to master this scale, but, recently, DNA nanotechnology (1)—in particular, DNA origami (2)—has emerged as a powerful tool to build structures precise enough to help us do so. On page 296 of this issue, Kopperger et al. (3) show that they are now also able to control the motion of a DNA origami device from the outside by applying electric fields.

  11. Optoelectronic Technology Consortium: Precompetitive Consortium for Optoelectronic Interconnect Technology

    DTIC Science & Technology

    1992-09-01

    demonstrating the producibility of optoelectronic components for high-density/high-data-rate processors and accelerating the insertion of this technology...technology development stage, OETC will advance the development of optical components, produce links for a multiboard processor testbed demonstration, and...components that are affordable, initially at <$100 per line, and reliable, with a li~e BER᝺-15 and MTTF >10 6 hours. Under the OETC program, Honeywell will

  12. Assembly of opto-electronic module with improved heat sink

    DOEpatents

    Chan, Benson; Fortier, Paul Francis; Freitag, Ladd William; Galli, Gary T.; Guindon, Francois; Johnson, Glen Walden; Letourneau, Martial; Sherman, John H.; Tetreault, Real

    2004-11-23

    A heat sink for a transceiver optoelectronic module including dual direct heat paths and a structure which encloses a number of chips having a central web which electrically isolates transmitter and receiver chips from each other. A retainer for an optical coupler having a port into which epoxy is poured. An overmolded base for an optoelectronic module having epoxy flow controller members built thereon. Assembly methods for an optoelectronic module including gap setting and variation of a TAB bonding process.

  13. Nanoscale magnetic imaging with a single nitrogen-vacancy center in diamond

    NASA Astrophysics Data System (ADS)

    Hong, Sungkun

    Magnetic imaging has been playing central roles not only in fundamental sciences but also in engineering and industry. Their numerous applications can be found in various areas, ranging from chemical analysis and biomedical imaging to magnetic data storage technology. An outstanding problem is to develop new magnetic imaging techniques with improved spatial resolutions down to nanoscale, while maintaining their magnetic sensitivities. For instance, if detecting individual electron or nuclear spins with nanomter spatial resolution is possible, it would allow for direct imaging of chemical structures of complex molecules, which then could bring termendous impacts on biological sciences. While realization of such nanoscale magnetic imaging still remains challenging, nitrogen-vacancy (NV) defects in diamond have recently considered as promising magnetic field sensors, as their electron spins show exceptionally long coherence even at room temperature. This thesis presents experimental progress in realizing a nanoscale magnetic imaging apparatus with a single nitrogen-vacancy (NV) color center diamond. We first fabricated diamond nanopillar devices hosting single NV centers at their ends, and incorporated them to a custom-built atomic force microscope (AFM). Our devices showed unprecedented combination of magnetic field sensitivity and spatial resolution for scanning NV systems. We then used these devices to magnetically image a single isolated electronic spin with nanometer resolution, for the first time under ambient condition. We also extended our study to improve and generalize the application of the scanning NV magnetometer we developed. We first introduced magnetic field gradients from a strongly magnetized tip, and demonstrated that the spatial resolution can be further improved by spectrally distinguishing identical spins at different locations. In addition, we developed a method to synchronize the periodic motion of an AFM tip and pulsed microwave sequences

  14. Organic photosensitive devices using subphthalocyanine compounds

    DOEpatents

    Rand, Barry [Princeton, NJ; Forrest, Stephen R [Ann Arbor, MI; Mutolo, Kristin L [Hollywood, CA; Mayo, Elizabeth [Alhambra, CA; Thompson, Mark E [Anaheim Hills, CA

    2011-07-05

    An organic photosensitive optoelectronic device, having a donor-acceptor heterojunction of a donor-like material and an acceptor-like material and methods of making such devices is provided. At least one of the donor-like material and the acceptor-like material includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound; and/or the device optionally has at least one of a blocking layer or a charge transport layer, where the blocking layer and/or the charge transport layer includes a subphthalocyanine, a subporphyrin, and/or a subporphyrazine compound.

  15. Stereoscopic construction and practice of optoelectronic technology textbook

    NASA Astrophysics Data System (ADS)

    Zhou, Zigang; Zhang, Jinlong; Wang, Huili; Yang, Yongjia; Han, Yanling

    2017-08-01

    It is a professional degree course textbook for the Nation-class Specialty—Optoelectronic Information Science and Engineering, and it is also an engineering practice textbook for the cultivation of photoelectric excellent engineers. The book seeks to comprehensively introduce the theoretical and applied basis of optoelectronic technology, and it's closely linked to the current development of optoelectronic industry frontier and made up of following core contents, including the laser source, the light's transmission, modulation, detection, imaging and display. At the same time, it also embodies the features of the source of laser, the transmission of the waveguide, the electronic means and the optical processing methods.

  16. Aligned silver nanowire-based transparent electrodes for engineering polarisation-selective optoelectronics.

    PubMed

    Park, Byoungchoo; Bae, In-Gon; Huh, Yoon Ho

    2016-01-18

    We herein report on a remarkably simple, fast, and economic way of fabricating homogeneous and well oriented silver nanowires (AgNWs) that exhibit strong in-plane electrical and optical anisotropies. Using a small quantity of AgNW suspension, the horizontal-dip (H-dip) coating method was applied, in which highly oriented AgNWs were deposited unidirectionally along the direction of coating over centimetre-scale lengths very rapidly. In applying the H-dip-coating method, we adjusted the shear strain rate of the capillary flow in the Landau-Levich meniscus of the AgNW suspension, which induced a high degree of uniaxial orientational ordering (0.37-0.43) of the AgNWs, comparable with the ordering seen in archetypal nematic liquid crystal (LC) materials. These AgNWs could be used to fabricate not only transparent electrodes, but also LC-alignment electrodes for LC devices and/or polarising electrodes for organic photovoltaic devices, having the potential to revolutionise the architectures of a number of polarisation-selective opto-electronic devices for use in printed/organic electronics.

  17. EDITORIAL: Design and function of molecular and bioelectronics devices

    NASA Astrophysics Data System (ADS)

    Krstic, Predrag; Forzani, Erica; Tao, Nongjian; Korkin, Anatoli

    2007-10-01

    from NGC2007. The NGC2007 meeting, which included two days of tutorials (Spring School) and a three day symposium, attracted approximately 400 participants from academic, industrial and governmental research institutions from 41 countries, and covered recent developments in the fabrication and functionality of nano-scale materials, devices and system architecture from advanced CMOS to molecular electronics, photonics, optoelectronics and magnetic materials and devices. The success of the conference would not have been possible without generous support from many sponsors and research institutions, especially from Arizona State University (conference host and co-organizer), International Science and Technology Center (ISTC), National Science Foundation (NSFT), Defense Advanced Research Agency (DARPA), Office of Naval Research, Army Research Office, Computational Chemistry List (CCL), Springer Publisher, City of Tempe, STMicroelectronics, Quarles & Brady LLP, Oak Ridge National Laboratory, Canadian Consulate in Phoenix, Salt River Project (SRP) and many other local, national and international and individual supporters. We would like to acknowledge the shared responsibility for this special issue of Nanotechnology on molecular and bioelectronics, and the highly professional support from Dr Nina Couzin, Dr Alex Wotherspoon and the Nanotechnology team from the IOP Publishing. We also acknowledge the exception made in allowing the publication of some material that is outside the normal scope of Nanotechnology.

  18. Opto-electronic oscillators having optical resonators

    NASA Technical Reports Server (NTRS)

    Yao, Xiaotian Steve (Inventor); Maleki, Lutfollah (Inventor); Ilchenko, Vladimir (Inventor)

    2003-01-01

    Systems and techniques of incorporating an optical resonator in an optical part of a feedback loop in opto-electronic oscillators. This optical resonator provides a sufficiently long energy storage time and hence to produce an oscillation of a narrow linewidth and low phase noise. Certain mode matching conditions are required. For example, the mode spacing of the optical resonator is equal to one mode spacing, or a multiplicity of the mode spacing, of an opto-electronic feedback loop that receives a modulated optical signal and to produce an electrical oscillating signal.

  19. Nanoscale thermal transport. II. 2003-2012

    NASA Astrophysics Data System (ADS)

    Cahill, David G.; Braun, Paul V.; Chen, Gang; Clarke, David R.; Fan, Shanhui; Goodson, Kenneth E.; Keblinski, Pawel; King, William P.; Mahan, Gerald D.; Majumdar, Arun; Maris, Humphrey J.; Phillpot, Simon R.; Pop, Eric; Shi, Li

    2014-03-01

    A diverse spectrum of technology drivers such as improved thermal barriers, higher efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic recording, thermal management of nanoscale electronics, and nanoparticles for thermal medical therapies are motivating studies of the applied physics of thermal transport at the nanoscale. This review emphasizes developments in experiment, theory, and computation in the past ten years and summarizes the present status of the field. Interfaces become increasingly important on small length scales. Research during the past decade has extended studies of interfaces between simple metals and inorganic crystals to interfaces with molecular materials and liquids with systematic control of interface chemistry and physics. At separations on the order of ˜ 1 nm , the science of radiative transport through nanoscale gaps overlaps with thermal conduction by the coupling of electronic and vibrational excitations across weakly bonded or rough interfaces between materials. Major advances in the physics of phonons include first principles calculation of the phonon lifetimes of simple crystals and application of the predicted scattering rates in parameter-free calculations of the thermal conductivity. Progress in the control of thermal transport at the nanoscale is critical to continued advances in the density of information that can be stored in phase change memory devices and new generations of magnetic storage that will use highly localized heat sources to reduce the coercivity of magnetic media. Ultralow thermal conductivity—thermal conductivity below the conventionally predicted minimum thermal conductivity—has been observed in nanolaminates and disordered crystals with strong anisotropy. Advances in metrology by time-domain thermoreflectance have made measurements of the thermal conductivity of a thin layer with micron-scale spatial resolution relatively routine. Scanning thermal microscopy and thermal

  20. Three-dimensional minority-carrier collection channels at shunt locations in silicon solar cells

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Guthrey, Harvey; Johnston, Steve; Weiss, Dirk N.

    2016-10-01

    In this contribution, we demonstrate the value of using a multiscale multi-technique characterization approach to study the performance-limiting defects in multi-crystalline silicon (mc-Si) photovoltaic devices. The combination of dark lock-in thermography (DLIT) imaging, electron beam induced current imaging, and both transmission and scanning transmission electron microscopy (TEM/STEM) on the same location revealed the nanoscale origin of the optoelectronic properties of shunts visible at the device scale. Our site-specific correlative approach identified the shunt behavior to be a result of three-dimensional inversion channels around structural defects decorated with oxide precipitates. These inversion channels facilitate enhanced minority-carrier transport that results in themore » increased heating observed through DLIT imaging. The definitive connection between the nanoscale structure and chemistry of the type of shunt investigated here allows photovoltaic device manufacturers to immediately address the oxygen content of their mc-Si absorber material when such features are present, instead of engaging in costly characterization.« less

  1. Locally oxidized silicon surface-plasmon Schottky detector for telecom regime.

    PubMed

    Goykhman, Ilya; Desiatov, Boris; Khurgin, Jacob; Shappir, Joseph; Levy, Uriel

    2011-06-08

    We experimentally demonstrate an on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths. The device is fabricated using a self-aligned approach of local-oxidation of silicon (LOCOS) on silicon on insulator substrate, which provides compatibility with standard complementary metal-oxide semiconductor technology and enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. Additionally, LOCOS technique allows avoiding lateral misalignment between the silicon surface and the metal layer to form a nanoscale Schottky contact. The fabricated devices showed enhanced detection capability for shorter wavelengths that is attributed to increased probability of the internal photoemission process. We found the responsivity of the nanodetector to be 0.25 and 13.3 mA/W for incident optical wavelengths of 1.55 and 1.31 μm, respectively. The presented device can be integrated with other nanophotonic and nanoplasmonic structures for the realization of monolithic opto-electronic circuitry on-chip.

  2. Deterministic growth of AgTCNQ and CuTCNQ nanowires on large-area reduced graphene oxide films for flexible optoelectronics.

    PubMed

    Zhang, Shuai; Lu, Zhufeng; Gu, Li; Cai, Liling; Cao, Xuebo

    2013-11-22

    We describe a synchronous reduction and assembly procedure to directly produce large-area reduced graphene oxide (rGO) films sandwiched by a high density of metal nanoparticles (silver and copper). Further, by using the sandwiched metal NPs as sources, networks consisting of AgTCNQ and CuTCNQ nanowires were deterministically grown from the rGO films, forming structurally and functionally integrated rGO/metal-TCNQ hybrid films with outstanding flexibility, bending endurance, and electrical stability. Interestingly, due to the p-type nature of the rGO film and the n-type nature of the metal-TCNQ NWs, the hybrid films are essentially thin-film p-n junctions which are useful in ubiquitous electronics and optoelectronics. Measurements of the optoelectronic properties demonstrate that the rGO/metal-TCNQ hybrid films exhibit substantial photoconductivity and highly reproducible photoswitching behaviours. The present approach may open the door to the versatile and deterministic integration of functional nanostructures into flexible conducting substrates and provide an important step towards producing low-cost and high-performance soft electronic and optoelectronic devices.

  3. Web-Enabled Optoelectronic Particle-Fallout Monitor

    NASA Technical Reports Server (NTRS)

    Lineberger, Lewis P.

    2008-01-01

    A Web-enabled optoelectronic particle- fallout monitor has been developed as a prototype of future such instruments that (l) would be installed in multiple locations for which assurance of cleanliness is required and (2) could be interrogated and controlled in nearly real time by multiple remote users. Like prior particle-fallout monitors, this instrument provides a measure of particles that accumulate on a surface as an indication of the quantity of airborne particulate contaminants. The design of this instrument reflects requirements to: Reduce the cost and complexity of its optoelectronic sensory subsystem relative to those of prior optoelectronic particle fallout monitors while maintaining or improving capabilities; Use existing network and office computers for distributed display and control; Derive electric power for the instrument from a computer network, a wall outlet, or a battery; Provide for Web-based retrieval and analysis of measurement data and of a file containing such ancillary data as a log of command attempts at remote units; and Use the User Datagram Protocol (UDP) for maximum performance and minimal network overhead.

  4. HS-SPM Mapping of Ferroelectric Domain Dynamics with Combined Nanoscale and Nanosecond Resolution

    NASA Astrophysics Data System (ADS)

    Polomoff, Nicholas Alexander

    The unique properties of ferroelectric materials have been applied for a wide variety of device applications. In particular, properties such as spontaneous polarization and domain structure hysteresis at room temperature have rendered its application in nonvolatile memory devices such as FeRAMs. Along with the ever-present drive for smaller memory devices is the demand that they have increased operating speeds, longer retention times, lower power requirements and better overall reliability. It is therefore pertinent that further investigation of the dynamics, kinetics and mechanisms involved with ferroelectric domain polarization reversal at nanoscale lengths and temporal durations be conducted to optimize future ferroelectric based nonvolatile memory devices. Accordingly High Speed Piezoforce Microscopy (HSPFM) will be employed to directly investigate and observe the dynamic nucleation and growth progression of ferroelectric domain polarization reversal processes in thin epitaxial deposited PZT films. The capabilities of HSPFM will allow for in-situ direct observation of nascent dynamic domain polarization reversal events with nanoscale resolution. Correlations and characterization of the thin ferroelectric film samples will be made based on the observed polarization reversal dynamics and switching mechanism with respect to their varying strain states, compositions, and/or orientations. Electrical pulsing schemes will also be employed to enhance the HSPFM procedure to achieve nanoscale temporal resolution of nascent domain nucleation and growth events. A unique pulsing approach is also proposed, and tested, to improve power consumption during switching. Finally, artificial defects will be introduced into the PZT thin film by fabricating arrays of indentations with different shapes and loads. These controlled indents will result in the introduction of different stress states of compression and tension into the ferroelectric thin film. It is hypothesized that these

  5. High-Frequency Spin-Based Devices for Nanoscale Signal Processing

    DTIC Science & Technology

    2009-01-20

    feedback on the devices in order to improve their spectral properties . Deliverable: Microwave signals without an Applied Field. We have successfully...additionally have the advantage of higher operating frequencies than the more conventional devices based on NiFe alloys. By combining several of...Output from a Co/Ni based STNO. Corresponds to approximately 20 nW, about 10 times larger than typical NiFe .device. 6 High-Frequency Spin-Based

  6. Integrated nanoscale tools for interrogating living cells

    NASA Astrophysics Data System (ADS)

    Jorgolli, Marsela

    The development of next-generation, nanoscale technologies that interface biological systems will pave the way towards new understanding of such complex systems. Nanowires -- one-dimensional nanoscale structures -- have shown unique potential as an ideal physical interface to biological systems. Herein, we focus on the development of nanowire-based devices that can enable a wide variety of biological studies. First, we built upon standard nanofabrication techniques to optimize nanowire devices, resulting in perfectly ordered arrays of both opaque (Silicon) and transparent (Silicon dioxide) nanowires with user defined structural profile, densities, and overall patterns, as well as high sample consistency and large scale production. The high-precision and well-controlled fabrication method in conjunction with additional technologies laid the foundation for the generation of highly specialized platforms for imaging, electrochemical interrogation, and molecular biology. Next, we utilized nanowires as the fundamental structure in the development of integrated nanoelectronic platforms to directly interrogate the electrical activity of biological systems. Initially, we generated a scalable intracellular electrode platform based on vertical nanowires that allows for parallel electrical interfacing to multiple mammalian neurons. Our prototype device consisted of 16 individually addressable stimulation/recording sites, each containing an array of 9 electrically active silicon nanowires. We showed that these vertical nanowire electrode arrays could intracellularly record and stimulate neuronal activity in dissociated cultures of rat cortical neurons similar to patch clamp electrodes. In addition, we used our intracellular electrode platform to measure multiple individual synaptic connections, which enables the reconstruction of the functional connectivity maps of neuronal circuits. In order to expand and improve the capability of this functional prototype device we designed

  7. Advanced educational program in optoelectronics for undergraduates and graduates in electronics

    NASA Astrophysics Data System (ADS)

    Vladescu, Marian; Schiopu, Paul

    2015-02-01

    The optoelectronics education included in electronics curricula at Faculty of Electronics, Telecommunications and Information Technology of "Politehnica" University of Bucharest started in early '90s, and evolved constantly since then, trying to address the growing demand of engineers with a complex optoelectronics profile and to meet the increased requirements of microelectronics, optoelectronics, and lately nanotechnologies. Our goal is to provide a high level of theoretical background combined with advanced experimental tools in laboratories, and also with simulation platforms. That's why we propose an advanced educational program in optoelectronics for both grades of our study program, bachelor and master.

  8. Optoelectronic microdevices for combined phototherapy

    NASA Astrophysics Data System (ADS)

    Zharov, Vladimir P.; Menyaev, Yulian A.; Hamaev, V. A.; Antropov, G. M.; Waner, Milton

    2000-03-01

    In photomedicine in some of cases radiation delivery to local zones through optical fibers can be changed for the direct placing of tiny optical sources like semiconductor microlasers or light diodes in required zones of ears, nostrils, larynx, nasopharynx cochlea or alimentary tract. Our study accentuates the creation of optoelectronic microdevices for local phototherapy and functional imaging by using reflected light. Phototherapeutic micromodule consist of the light source, microprocessor and miniature optics with different kind of power supply: from autonomous with built-in batteries to remote supply by using pulsed magnetic field and supersmall coils. The developed prototype photomodule has size (phi) 8X16 mm and work duration with built-in battery and light diode up several hours at the average power from several tenths of mW to few mW. Preliminary clinical tests developed physiotherapeutic micrimodules in stomatology for treating the inflammation and in otolaryngology for treating tonsillitis and otitis are presented. The developed implanted electro- optical sources with typical size (phi) 4X0,8 mm and with remote supply were used for optical stimulation of photosensitive retina structure and electrostimulation of visual nerve. In this scheme the superminiature coil with 30 electrical integrated levels was used. Such devices were implanted in eyes of 175 patients with different vision problems during clinical trials in Institute of Eye's Surgery in Moscow. For functional imaging of skin layered structure LED arrays coupled photodiodes arrays were developed. The possibilities of this device for study drug diffusion and visualization small veins are discussed.

  9. Printed Biopolymer-Based Electro-Optic Device Components

    DTIC Science & Technology

    2013-07-01

    devices and fabricated e-beam lithography-based master molds. Printed micro and nanostructures using a newly developed spin-on nanoprinting (SNAP...polymeric materials. Among the natural biopolymers , deoxyribonucleic acid (DNA) is an attractive material which can be used to make electronic and...photonic devices [2, 3]. If patterned on the micro and nanoscale using a soft lithography technique, high quality biodegradable optical devices can be

  10. High-Performance Photovoltaic Detector Based on MoTe2 /MoS2 Van der Waals Heterostructure.

    PubMed

    Chen, Yan; Wang, Xudong; Wu, Guangjian; Wang, Zhen; Fang, Hehai; Lin, Tie; Sun, Shuo; Shen, Hong; Hu, Weida; Wang, Jianlu; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao

    2018-03-01

    Van der Waals heterostructures based on 2D layered materials have received wide attention for their multiple applications in optoelectronic devices, such as solar cells, light-emitting devices, and photodiodes. In this work, high-performance photovoltaic photodetectors based on MoTe 2 /MoS 2 vertical heterojunctions are demonstrated by exfoliating-restacking approach. The fundamental electric properties and band structures of the junction are revealed and analyzed. It is shown that this kind of photodetectors can operate under zero bias with high on/off ratio (>10 5 ) and ultralow dark current (≈3 pA). Moreover, a fast response time of 60 µs and high photoresponsivity of 46 mA W -1 are also attained at room temperature. The junctions based on 2D materials are expected to constitute the ultimate functional elements of nanoscale electronic and optoelectronic applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenide van der Waals heterostructures

    NASA Astrophysics Data System (ADS)

    Zhao, Yipeng; Yu, Wangbing; Ouyang, Gang

    2018-01-01

    2D transition metal dichalcogenide (TMDC)-based heterostructures exhibit several fascinating properties that can address the emerging market of energy conversion and storage devices. Current achievements show that the vertical stacked TMDC heterostructures can form type II band alignment and possess significant optoelectronic properties. However, a detailed analytical understanding of how to quantify the band alignment and band offset as well as the optimized power conversion efficiency (PCE) is still lacking. Herein, we propose an analytical model to exhibit the PCEs of TMDC van der Waals (vdW) heterostructures and explore the intrinsic mechanism of photovoltaic conversion based on the detailed balance principle and atomic-bond-relaxation correlation mechanism. We find that the PCE of monolayer MoS2/WSe2 can be up to 1.70%, and that of the MoS2/WSe2 vdW heterostructures increases with thickness, owing to increasing optical absorption. Moreover, the results are validated by comparing them with the available evidence, providing realistic efficiency targets and design principles. Highlights • Both electronic and optoelectronic models are developed for vertical stacked MoS2/WSe2 heterostructures. • The underlying mechanism on size effect of electronic and optoelectronic properties for vertical stacked MoS2/WSe2 heterostructures is clarified. • The macroscopically measurable quantities and the microscopical bond identities are connected.

  12. Recovery of Spectrally Overlapping QPSK Signals Using a Nonlinear Optoelectronic Filter

    DTIC Science & Technology

    2017-03-19

    Spectrally Overlapping QPSK Signals Using a Nonlinear Optoelectronic Filter William Loh, Siva Yegnanarayanan, Kenneth E. Kolodziej, and Paul...recovery of a weak QPSK signal buried 35-dB beneath an interfering QPSK signal having an overlapping spectrum. This nonlinear optoelectronic filter ...from increased detection sensitivity. Here, we demonstrate an optoelectronic filter that enables the detection of a desired signal hidden beneath a

  13. Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs

    NASA Astrophysics Data System (ADS)

    Zebrev, G. I.; Gorbunov, M. S.; Pershenkov, V. S.

    2008-03-01

    The sensitivity of sub-100 nm devices to microdose effects, which can be considered as intermediate case between cumulative total dose and single event errors, is investigated. A detailed study of radiation-induced leakage due to stochastic charge trapping in irradiated planar and nonplanar devices is developed. The influence of High-K insulators on nanoscale ICs reliability is discussed. Low critical values of trapped charge demonstrate a high sensitivity to single event effect.

  14. Growth of Nanoscale BaTiO3/SrTiO3 Superlattices by Molecular-Beam Epitaxy

    DTIC Science & Technology

    2008-05-01

    also of interest for novel acous- tic phonon devices including mirrors, filters, and cavities for coherent acoustic phonon generation and control...phonon “laser”).4 The structure of these devices is de- termined by the acoustic phonon wavelength, which is typically in the range of a few nanometers...nanoscale [(BaTiO3)n /(SrTiO3)m]p superlattices with atomically abrupt interfaces that are vital for the perfor- mance of acoustic phonon devices as

  15. Segmented nanowires displaying locally controllable properties

    DOEpatents

    Sutter, Eli Anguelova; Sutter, Peter Werner

    2013-03-05

    Vapor-liquid-solid growth of nanowires is tailored to achieve complex one-dimensional material geometries using phase diagrams determined for nanoscale materials. Segmented one-dimensional nanowires having constant composition display locally variable electronic band structures that are determined by the diameter of the nanowires. The unique electrical and optical properties of the segmented nanowires are exploited to form electronic and optoelectronic devices. Using gold-germanium as a model system, in situ transmission electron microscopy establishes, for nanometer-sized Au--Ge alloy drops at the tips of Ge nanowires (NWs), the parts of the phase diagram that determine their temperature-dependent equilibrium composition. The nanoscale phase diagram is then used to determine the exchange of material between the NW and the drop. The phase diagram for the nanoscale drop deviates significantly from that of the bulk alloy.

  16. Stable and metastable nanowires displaying locally controllable properties

    DOEpatents

    Sutter, Eli Anguelova; Sutter, Peter Werner

    2014-11-18

    Vapor-liquid-solid growth of nanowires is tailored to achieve complex one-dimensional material geometries using phase diagrams determined for nanoscale materials. Segmented one-dimensional nanowires having constant composition display locally variable electronic band structures that are determined by the diameter of the nanowires. The unique electrical and optical properties of the segmented nanowires are exploited to form electronic and optoelectronic devices. Using gold-germanium as a model system, in situ transmission electron microscopy establishes, for nanometer-sized Au--Ge alloy drops at the tips of Ge nanowires (NWs), the parts of the phase diagram that determine their temperature-dependent equilibrium composition. The nanoscale phase diagram is then used to determine the exchange of material between the NW and the drop. The phase diagram for the nanoscale drop deviates significantly from that of the bulk alloy.

  17. Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.

    PubMed

    Yang, Tiefeng; Zheng, Biyuan; Wang, Zhen; Xu, Tao; Pan, Chen; Zou, Juan; Zhang, Xuehong; Qi, Zhaoyang; Liu, Hongjun; Feng, Yexin; Hu, Weida; Miao, Feng; Sun, Litao; Duan, Xiangfeng; Pan, Anlian

    2017-12-04

    High-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe 2 /SnS 2 vertical bilayer p-n junctions on SiO 2 /Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10 -14 A and a highest on-off ratio of up to 10 7 . Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.

  18. Structured organic materials and devices using low-energy particle beams

    DOEpatents

    Vardeny, Z. Valy; Li, Sergey; Delong, Matthew C.; Jiang, Xiaomei

    2005-09-13

    Organic materials exposed to an electron beam for patterning a substrate (1) to make an optoelectronic organic device which includes a source, a drain, gate dielectric layer (4), and a substrate for emitting light.

  19. New Materials for Supramolecular Nanoscale Devices

    NASA Astrophysics Data System (ADS)

    Jurow, Matthew

    The projects reported here seek to employ the very small---molecules, nanoparticles, films of materials far thinner than a human hair---to create diverse useful systems. We have focused our attention of a class of molecules which strongly absorb light and can be induced to interact with other materials to create devices which can harvest the energy in sunlight, change the way they respond to external stimulus based on the way they are being illuminated, and hopefully in the future make electronic devices more efficient, sustainable, smaller and broadly better. The majority of our most advanced current technologies are made by "top down" fabrication. Large portions of materials which do not demonstrate any of the strange properties which emerge when physical dimensions are severely limited, called bulk materials, are whittled down and painstakingly arranged sometimes one molecule at a time to make microchips and the screens in our cell phones. Another driving force of the research described here is to advance the idea of "self assembly" by which molecules can be designed to interact with each other in such a way that they arrange into a precise manner without needing to be moved one at a time. By advancing our knowledge of self assembled systems, especially those which interact with light, we have strived to make real progress towards new highly applicable functional technologies across many disciplines.

  20. Nanoscale superconducting memory based on the kinetic inductance of asymmetric nanowire loops

    NASA Astrophysics Data System (ADS)

    Murphy, Andrew; Averin, Dmitri V.; Bezryadin, Alexey

    2017-06-01

    The demand for low-dissipation nanoscale memory devices is as strong as ever. As Moore’s law is staggering, and the demand for a low-power-consuming supercomputer is high, the goal of making information processing circuits out of superconductors is one of the central goals of modern technology and physics. So far, digital superconducting circuits could not demonstrate their immense potential. One important reason for this is that a dense superconducting memory technology is not yet available. Miniaturization of traditional superconducting quantum interference devices is difficult below a few micrometers because their operation relies on the geometric inductance of the superconducting loop. Magnetic memories do allow nanometer-scale miniaturization, but they are not purely superconducting (Baek et al 2014 Nat. Commun. 5 3888). Our approach is to make nanometer scale memory cells based on the kinetic inductance (and not geometric inductance) of superconducting nanowire loops, which have already shown many fascinating properties (Aprili 2006 Nat. Nanotechnol. 1 15; Hopkins et al 2005 Science 308 1762). This allows much smaller devices and naturally eliminates magnetic-field cross-talk. We demonstrate that the vorticity, i.e., the winding number of the order parameter, of a closed superconducting loop can be used for realizing a nanoscale nonvolatile memory device. We demonstrate how to alter the vorticity in a controlled fashion by applying calibrated current pulses. A reliable read-out of the memory is also demonstrated. We present arguments that such memory can be developed to operate without energy dissipation.