Fabrication of Nanoscale Circuits on Inkjet-Printing Patterned Substrates.

PubMed

Chen, Shuoran; Su, Meng; Zhang, Cong; Gao, Meng; Bao, Bin; Yang, Qiang; Su, Bin; Song, Yanlin

2015-07-08

Nanoscale circuits are fabricated by assembling different conducting materials (e.g., metal nanoparticles, metal nano-wires, graphene, carbon nanotubes, and conducting polymers) on inkjet-printing patterned substrates. This non-litho-graphy strategy opens a new avenue for integrating conducting building blocks into nanoscale devices in a cost-efficient manner. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Wang, Junxi

2014-02-15

Self-assembly SiO{sub 2} nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, themore » external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period.« less

Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

PubMed

Chen, Hao; Zhang, Qi; Chou, Stephen Y

2015-02-27

Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography.

PubMed

Zhang, Lisheng; Xu, Fujun; Wang, Jiaming; He, Chenguang; Guo, Weiwei; Wang, Mingxing; Sheng, Bowen; Lu, Lin; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

2016-11-04

We report epitaxial growth of AlN films with atomically flat surface on nano-patterned sapphire substrates (NPSS) prepared by nano-imprint lithography. The crystalline quality can be greatly improved by using the optimized 1-μm-period NPSS. The X-ray diffraction ω-scan full width at half maximum values for (0002) and (102) reflections are 171 and 205 arcsec, respectively. The optimized NPSS contribute to eliminating almost entirely the threading dislocations (TDs) originating from the AlN/sapphire interface via bending the dislocations by image force from the void sidewalls before coalescence. In addition, reducing the misorientations of the adjacent regions during coalescence adopting the low lateral growth rate is also essential for decreasing TDs in the upper AlN epilayer.

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

NASA Astrophysics Data System (ADS)

Zhang, Lisheng; Xu, Fujun; Wang, Jiaming; He, Chenguang; Guo, Weiwei; Wang, Mingxing; Sheng, Bowen; Lu, Lin; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

2016-11-01

We report epitaxial growth of AlN films with atomically flat surface on nano-patterned sapphire substrates (NPSS) prepared by nano-imprint lithography. The crystalline quality can be greatly improved by using the optimized 1-μm-period NPSS. The X-ray diffraction ω-scan full width at half maximum values for (0002) and (102) reflections are 171 and 205 arcsec, respectively. The optimized NPSS contribute to eliminating almost entirely the threading dislocations (TDs) originating from the AlN/sapphire interface via bending the dislocations by image force from the void sidewalls before coalescence. In addition, reducing the misorientations of the adjacent regions during coalescence adopting the low lateral growth rate is also essential for decreasing TDs in the upper AlN epilayer.

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography

PubMed Central

Zhang, Lisheng; Xu, Fujun; Wang, Jiaming; He, Chenguang; Guo, Weiwei; Wang, Mingxing; Sheng, Bowen; Lu, Lin; Qin, Zhixin; Wang, Xinqiang; Shen, Bo

2016-01-01

We report epitaxial growth of AlN films with atomically flat surface on nano-patterned sapphire substrates (NPSS) prepared by nano-imprint lithography. The crystalline quality can be greatly improved by using the optimized 1-μm-period NPSS. The X-ray diffraction ω-scan full width at half maximum values for (0002) and (102) reflections are 171 and 205 arcsec, respectively. The optimized NPSS contribute to eliminating almost entirely the threading dislocations (TDs) originating from the AlN/sapphire interface via bending the dislocations by image force from the void sidewalls before coalescence. In addition, reducing the misorientations of the adjacent regions during coalescence adopting the low lateral growth rate is also essential for decreasing TDs in the upper AlN epilayer. PMID:27812006

Theoretical studies on lattice-oriented growth of single-walled carbon nanotubes on sapphire

NASA Astrophysics Data System (ADS)

Li, Zhengwei; Meng, Xianhong; Xiao, Jianliang

2017-09-01

Due to their excellent mechanical and electrical properties, single-walled carbon nanotubes (SWNTs) can find broad applications in many areas, such as field-effect transistors, logic circuits, sensors and flexible electronics. High-density, horizontally aligned arrays of SWNTs are essential for high performance electronics. Many experimental studies have demonstrated that chemical vapor deposition growth of nanotubes on crystalline substrates such as sapphire offers a promising route to achieve such dense, perfectly aligned arrays. In this work, a theoretical study is performed to quantitatively understand the van der Waals interactions between SWNTs and sapphire substrates. The energetically preferred alignment directions of SWNTs on A-, R- and M-planes and the random alignment on the C-plane predicted by this study are all in good agreement with experiments. It is also shown that smaller SWNTs have better alignment than larger SWNTs due to their stronger interaction with sapphire substrate. The strong vdW interactions along preferred alignment directions can be intuitively explained by the nanoscale ‘grooves’ formed by atomic lattice structures on the surface of sapphire. This study provides important insights to the controlled growth of nanotubes and potentially other nanomaterials.

High-harmonic generation by field enhanced femtosecond pulses in metal-sapphire nanostructure

PubMed Central

Han, Seunghwoi; Kim, Hyunwoong; Kim, Yong Woo; Kim, Young-Jin; Kim, Seungchul; Park, In-Yong; Kim, Seung-Woo

2016-01-01

Plasmonic high-harmonic generation (HHG) drew attention as a means of producing coherent extreme ultraviolet (EUV) radiation by taking advantage of field enhancement occurring in metallic nanostructures. Here a metal-sapphire nanostructure is devised to provide a solid tip as the HHG emitter, replacing commonly used gaseous atoms. The fabricated solid tip is made of monocrystalline sapphire surrounded by a gold thin-film layer, and intended to produce EUV harmonics by the inter- and intra-band oscillations of electrons driven by the incident laser. The metal-sapphire nanostructure enhances the incident laser field by means of surface plasmon polaritons, triggering HHG directly from moderate femtosecond pulses of ∼0.1 TW cm−2 intensities. The measured EUV spectra exhibit odd-order harmonics up to ∼60 nm wavelengths without the plasma atomic lines typically seen when using gaseous atoms as the HHG emitter. This experimental outcome confirms that the plasmonic HHG approach is a promising way to realize coherent EUV sources for nano-scale near-field applications in spectroscopy, microscopy, lithography and atto-second physics. PMID:27721374

282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

NASA Astrophysics Data System (ADS)

Dong, Peng; Yan, Jianchang; Wang, Junxi; Zhang, Yun; Geng, Chong; Wei, Tongbo; Cong, Peipei; Zhang, Yiyun; Zeng, Jianping; Tian, Yingdong; Sun, Lili; Yan, Qingfeng; Li, Jinmin; Fan, Shunfei; Qin, Zhixin

2013-06-01

We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The AlN coalescence thickness on NPSS is only 3 μm due to AlN's nano-scaled lateral growth, which also leads to low dislocation densities in AlN and epi-layers above. On NPSS, the light-output power of a 282-nm UV-LED reaches 3.03 mW at 20 mA with external quantum efficiency of 3.45%, exhibiting 98% better performance than that on flat sapphire. Temperature-dependent photoluminescence reveals this significant enhancement to be a combination of higher internal quantum efficiency and higher light extraction efficiency.

Nanoscale patterning of Si surface using SPM scratching

NASA Astrophysics Data System (ADS)

Ogino, T.; Nishimura, S.; Shirakashi, J.

2008-03-01

Nanolithography of Si surface using scanning probe microscopy (SPM) scratching with a diamond-coated tip was systematically investigated at a low force regime below 9 μN. The groove patterns with controlled width and depth could be achieved by adjusting the applied force, scan direction and the number of scan cycles. There was no effect of scan speed on the groove size. The minimum groove width of 10 nm was obtained on Si surfaces. Furthermore, more complex nanostructures such as line and space patterns of 30 nm pith and dot arrays of 2.6×1010 cm-2 density were realized. SPM scratching with a diamond-coated tip allows nanoscale patterning of Si surfaces to be performed simply.

Characterization of nonpolar a-plane GaN epi-layers grown on high-density patterned r-plane sapphire substrates

NASA Astrophysics Data System (ADS)

Jinno, Daiki; Otsuki, Shunya; Sugimori, Shogo; Daicho, Hisayoshi; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

2018-02-01

To reduce the number of threading dislocations (TDs) in nonpolar a-plane GaN (a-GaN) epi-layers grown on flat r-plane sapphire substrates (r-FSS), we investigated the effects on the crystalline quality of the a-GaN epi-layers of high-density patterned r-plane sapphire substrates (r-HPSS), the patterns of which were placed at intervals of several hundred nanometers. Two types of r-HPSS, the patterns of which had diameters and heights on the order of several hundred nanometers (r-NHPSS) or several micrometers (r-MHPSS), were prepared with conventional r-FSS. The effect of these r-HPSS on the a-GaN epi-layers was demonstrated by evaluating the surface morphology and the crystalline quality of the epi-layers. The surfaces of the a-GaN epi-layer grown on r-FSS and r-NHPSS were pit-free and mirror-like, whereas the surface of the a-GaN epi-layer grown on r-MHPSS was very rough due to the large, irregular GaN islands that grew on the patterns, mainly at the initial growth stage. The crystalline quality of the a-GaN epi-layer grown on r-NHPSS was better than that of the a-GaN epi-layer grown on r-FSS. We confirmed that there were fewer TDs in the a-GaN epi-layer grown on r-NHPSS than there were in the a-GaN epi-layer grown on r-FSS. The TDs propagating to the surface in a-GaN epi-layer grown on r-NHPSS were mainly generated on the flat sapphire regions between the patterns. Interestingly, it was also found that the TDs that propagated to the surface concentrated with a periodic pitch along the c-axis direction. The TD densities of a-GaN epi-layers grown on r-FSS and r-NHPSS were estimated to be approximately 5.0 × 1010 and 1.5 × 109 cm-2, respectively. This knowledge will contribute to the further development of a-GaN epi-layers for high-performance devices.

Transfer molding processes for nanoscale patterning of poly-L-lactic acid (PLLA) films

NASA Astrophysics Data System (ADS)

Dhakal, Rabin; Peer, Akshit; Biswas, Rana; Kim, Jaeyoun

2016-03-01

Nanoscale patterned structures composed of biomaterials exhibit great potential for the fabrication of functional biostructures. In this paper, we report cost-effective, rapid, and highly reproducible soft lithographic transfer-molding techniques for creating periodic micro- and nano-scale textures on poly (L-lactic acid) (PLLA) surface. These artificial textures can increase the overall surface area and change the release dynamics of the therapeutic agents coated on it. Specifically, we use the double replication technique in which the master pattern is first transferred to the PDMS mold and the pattern on PDMS is then transferred to the PLLA films through drop-casting as well as nano-imprinting. The ensuing comparison studies reveal that the drop-cast PLLA allows pattern transfer at higher levels of fidelity, enabling the realization of nano-hole and nano-cone arrays with pitch down to ~700 nm. The nano-patterned PLLA film was then coated with rapamycin to make it drug-eluting.

Air-void embedded GaN-based light-emitting diodes grown on laser drilling patterned sapphire substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Hao; Li, Yufeng; Wang, Shuai

Air-void structure was introduced in GaN-based blue light-emitting diodes (LED) with one-step growth on periodic laser drilling patterned sapphire substrate, which free of any photolithography or wet/dry etching process. The influence of filling factors (FF) of air-void on crystal quality and optical performance were investigate. Transmission electron microscopy images and micro-Raman spectroscopy indicated that the dislocation was bended and the partially compressed strain was released. When FF was 55.43%, compared with the LED structure grown on flat sapphire substrate, the incorporation of air-void was observed to reduce the compressed stress of ∼20% and the luminance intensity has improved by 128%.more » Together with the simulated reflection intensity enhancement by finite difference time-domain (FDTD) method, we attribute the enhanced optical performance to the combined contribution of strong back-side light reflection of air-void and better GaN epitaxial quality. This approach provides a simple replacement to the conventional air-void embedded LED process.« less

Defect reduction in GaN on dome-shaped patterned-sapphire substrates

NASA Astrophysics Data System (ADS)

Chen, Po-Hsun; Su, Vin-Cent; Wu, Shang-Hsuan; Lin, Ray-Ming; Kuan, Chieh-Hsiung

2018-02-01

This paper demonstrates the behavior of defect reduction in un-doped GaN (u-GaN) grown on a commercial dome-shaped patterned-sapphire substrate (CDPSS). Residual strain inside the u-GaN grown on the CDPSS have been investigated as well. As verified by the experimentally measured data, the limited growth rate of the u-GaN on the sidewall of the CDPSS enhances the lateral growth of the GaN on the trench region while increasing the growth time. This subsequently contributes to improve the crystalline quality of the GaN on the CDPSS. The more prominent dislocations occur in the u-GaN epilayers on the CDPSS after reaching the summit of the accumulated strain inside the epilayers. Such prominent bent dislocations improve their blocking abilities, followed by the achievement of the better crystalline quality for the growth of the u-GaN on the CDPSS.

High performance sapphire windows

NASA Technical Reports Server (NTRS)

Bates, Stephen C.; Liou, Larry

1993-01-01

High-quality, wide-aperture optical access is usually required for the advanced laser diagnostics that can now make a wide variety of non-intrusive measurements of combustion processes. Specially processed and mounted sapphire windows are proposed to provide this optical access to extreme environment. Through surface treatments and proper thermal stress design, single crystal sapphire can be a mechanically equivalent replacement for high strength steel. A prototype sapphire window and mounting system have been developed in a successful NASA SBIR Phase 1 project. A large and reliable increase in sapphire design strength (as much as 10x) has been achieved, and the initial specifications necessary for these gains have been defined. Failure testing of small windows has conclusively demonstrated the increased sapphire strength, indicating that a nearly flawless surface polish is the primary cause of strengthening, while an unusual mounting arrangement also significantly contributes to a larger effective strength. Phase 2 work will complete specification and demonstration of these windows, and will fabricate a set for use at NASA. The enhanced capabilities of these high performance sapphire windows will lead to many diagnostic capabilities not previously possible, as well as new applications for sapphire.

High performance sapphire windows

NASA Astrophysics Data System (ADS)

Bates, Stephen C.; Liou, Larry

1993-02-01

High-quality, wide-aperture optical access is usually required for the advanced laser diagnostics that can now make a wide variety of non-intrusive measurements of combustion processes. Specially processed and mounted sapphire windows are proposed to provide this optical access to extreme environment. Through surface treatments and proper thermal stress design, single crystal sapphire can be a mechanically equivalent replacement for high strength steel. A prototype sapphire window and mounting system have been developed in a successful NASA SBIR Phase 1 project. A large and reliable increase in sapphire design strength (as much as 10x) has been achieved, and the initial specifications necessary for these gains have been defined. Failure testing of small windows has conclusively demonstrated the increased sapphire strength, indicating that a nearly flawless surface polish is the primary cause of strengthening, while an unusual mounting arrangement also significantly contributes to a larger effective strength. Phase 2 work will complete specification and demonstration of these windows, and will fabricate a set for use at NASA. The enhanced capabilities of these high performance sapphire windows will lead to many diagnostic capabilities not previously possible, as well as new applications for sapphire.

GaN-based LEDs with a high light extraction composite surface structure fabricated by a modified YAG laser lift-off technology and the patterned sapphire substrates

NASA Astrophysics Data System (ADS)

Sun, Yongjian; Trieu, Simeon; Yu, Tongjun; Chen, Zhizhong; Qi, Shengli; Tian, Pengfei; Deng, Junjing; Jin, Xiaoming; Zhang, Guoyi

2011-08-01

Vertical structure LEDs have been fabricated with a novel light extraction composite surface structure composed of a micron grating and nano-structure. The composite surface structure was generated by using a modified YAG laser lift-off technique, separating the wafers from cone-shaped patterned sapphire substrates. LEDs thus fabricated showed the light output power increase about 1.7-2.5 times when compared with conventional vertical structure LEDs grown on plane sapphire substrates. A three-dimensional finite difference time domain method was used to simulate this new kind of LED device. It was determined that nano-structures in composite surface patterns play a key role in the improvement of light extraction efficiency of LEDs.

Lattice distortions in GaN on sapphire using the CBED-HOLZ technique.

PubMed

Sridhara Rao, D V; McLaughlin, K; Kappers, M J; Humphreys, C J

2009-09-01

The convergent beam electron diffraction (CBED) methodology was developed to investigate the lattice distortions in wurtzite gallium nitride (GaN) from a single zone-axis pattern. The methodology enabled quantitative measurements of lattice distortions (alpha, beta, gamma and c) in transmission electron microscope (TEM) specimens of a GaN film grown on (0,0,0,1) sapphire by metal-organic vapour-phase epitaxy. The CBED patterns were obtained at different distances from the GaN/sapphire interface. The results show that GaN is triclinic above the interface with an increased lattice parameter c. At 0.85 microm from the interface, alpha=90 degrees , beta=8905 degrees and gamma=11966 degrees . The GaN lattice relaxes steadily back to hexagonal further away from the sapphire substrate. The GaN distortions are mainly confined to the initial stages of growth involving the growth and the coalescence of 3D GaN islands.

Development and Industrialization of InGaN/GaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flemish, Joseph; Soer, Wouter

2015-11-30

Patterned sapphire substrate (PSS) technology has proven to be an effective approach to improve efficacy and reduce cost of light-emitting diodes (LEDs). The volume emission from the transparent substrate leads to high package efficiency, while the simple and robust architecture of PSS-based LEDs enables low cost. PSS substrates have gained wide use in mid-power LEDs over the past years. In this project, Lumileds has developed and industrialized PSS and epitaxy technology for high- power flip-chip LEDs to bring these benefits to a broader range of applications and accelerate the adoption of energy-efficient solid-state lighting (SSL). PSS geometries were designed formore » highly efficient light extraction in a flip-chip architecture and high-volume manufacturability, and corresponding sapphire patterning and epitaxy manufacturing processes were integrally developed. Concurrently, device and package architectures were developed to take advantage of the PSS flip-chip die in different types of products that meet application needs. The developed PSS and epitaxy technology has been fully implemented in manufacturing at Lumileds’ San Jose, CA location, and incorporated in illumination-grade LED products that have been successfully introduced to the market, including LUXEON Q and LUXEON FlipChip White.« less

Spectroscopic properties for identifying sapphire samples from Ban Bo Kaew, Phrae Province, Thailand

NASA Astrophysics Data System (ADS)

Mogmued, J.; Monarumit, N.; Won-in, K.; Satitkune, S.

2017-09-01

Gemstone commercial is a high revenue for Thailand especially ruby and sapphire. Moreover, Phrae is a potential gem field located in the northern part of Thailand. The studies of spectroscopic properties are mainly to identify gemstone using advanced techniques (e.g. UV-Vis-NIR spectrophotometry, FTIR spectrometry and Raman spectroscopy). Typically, UV-Vis-NIR spectrophotometry is a technique to study the cause of color in gemstones. FTIR spectrometry is a technique to study the functional groups in gem-materials. Raman pattern can be applied to identify the mineral inclusions in gemstones. In this study, the natural sapphires from Ban Bo Kaew were divided into two groups based on colors including blue and green. The samples were analyzed by UV-Vis-NIR spectrophotometer, FTIR spectrometer and Raman spectroscope for studying spectroscopic properties. According to UV-Vis-NIR spectra, the blue sapphires show higher Fe3+/Ti4+ and Fe2+/Fe3+ absorption peaks than those of green sapphires. Otherwise, green sapphires display higher Fe3+/Fe3+ absorption peaks than blue sapphires. The FTIR spectra of both blue and green sapphire samples show the absorption peaks of -OH,-CH and CO2. The mineral inclusions such as ferrocolumbite and rutile in sapphires from this area were observed by Raman spectroscope. The spectroscopic properties of sapphire samples from Ban Bo Kaew, Phrae Province, Thailand are applied to be the specific evidence for gemstone identification.

Sapphire tube pressure vessel

DOEpatents

Outwater, John O.

2000-01-01

A pressure vessel is provided for observing corrosive fluids at high temperatures and pressures. A transparent Teflon bag contains the corrosive fluid and provides an inert barrier. The Teflon bag is placed within a sapphire tube, which forms a pressure boundary. The tube is received within a pipe including a viewing window. The combination of the Teflon bag, sapphire tube and pipe provides a strong and inert pressure vessel. In an alternative embodiment, tie rods connect together compression fittings at opposite ends of the sapphire tube.

Fabrication of a highly oriented line structure on an aluminum surface and the nanoscale patterning on the nanoscale structure using highly functional molecules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Watanabe, Y.; Kato, H.; Takemura, S.

2009-07-15

The surface of an Al plate was treated with a combination of chemical and electrochemical processes for fabrication of surface nanoscale structures on Al plates. Chemical treatments by using acetone and pure water under supersonic waves were conducted on an Al surface. Additional electrochemical process in H{sub 2}SO{sub 4} solution created a finer and oriented nanoscale structure on the Al surface. Dynamic force microscopy (DFM) measurement clarified that the nanoscale highly oriented line structure was successfully created on the Al surface. The line distance was estimated approximately 30-40 nm. At the next stage, molecular patterning on the highly oriented linemore » structure by functional molecules such as copper phthalocyanine (CuPc) and fullerene C{sub 60} was also conducted. CuPc or C{sub 60} molecules were deposited on the highly oriented line structure on Al. A toluene droplet containing CuPc molecules was cast on the nanostructured Al plate and was extended on the surface. CuPc or C{sub 60} deposition on the nanostructured Al surface proceeded by evaporation of toluene. DFM and x-ray photoemission spectroscopy measurements demonstrated that a unique molecular pattern was fabricated so that the highly oriented groove channels were filled with the functional molecules.« less

Nanoscale patterning controls inorganic-membrane interface structure

NASA Astrophysics Data System (ADS)

Almquist, Benjamin D.; Verma, Piyush; Cai, Wei; Melosh, Nicholas A.

2011-02-01

The ability to non-destructively integrate inorganic structures into or through biological membranes is essential to realizing full bio-inorganic integration, including arrayed on-chip patch-clamps, drug delivery, and biosensors. Here we explore the role of nanoscale patterning on the strength of biomembrane-inorganic interfaces. AFM measurements show that inorganic probes functionalized with hydrophobic bands with thicknesses complimentary to the hydrophobic lipid bilayer core exhibit strong attachment in the bilayer. As hydrophobic band thickness increases to 2-3 times the bilayer core the interfacial strength decreases, comparable to homogeneously hydrophobic probes. Analytical calculations and molecular dynamics simulations predict a transition between a `fused' interface and a `T-junction' that matches the experimental results, showing lipid disorder and defect formation for thicker bands. These results show that matching biological length scales leads to more intimate bio-inorganic junctions, enabling rational design of non-destructive membrane interfaces.The ability to non-destructively integrate inorganic structures into or through biological membranes is essential to realizing full bio-inorganic integration, including arrayed on-chip patch-clamps, drug delivery, and biosensors. Here we explore the role of nanoscale patterning on the strength of biomembrane-inorganic interfaces. AFM measurements show that inorganic probes functionalized with hydrophobic bands with thicknesses complimentary to the hydrophobic lipid bilayer core exhibit strong attachment in the bilayer. As hydrophobic band thickness increases to 2-3 times the bilayer core the interfacial strength decreases, comparable to homogeneously hydrophobic probes. Analytical calculations and molecular dynamics simulations predict a transition between a `fused' interface and a `T-junction' that matches the experimental results, showing lipid disorder and defect formation for thicker bands. These results

Miniature Sapphire Acoustic Resonator - MSAR

NASA Technical Reports Server (NTRS)

Wang, Rabi T.; Tjoelker, Robert L.

2011-01-01

A room temperature sapphire acoustics resonator incorporated into an oscillator represents a possible opportunity to improve on quartz ultrastable oscillator (USO) performance, which has been a staple for NASA missions since the inception of spaceflight. Where quartz technology is very mature and shows a performance improvement of perhaps 1 dB/decade, these sapphire acoustic resonators when integrated with matured quartz electronics could achieve a frequency stability improvement of 10 dB or more. As quartz oscillators are an essential element of nearly all types of frequency standards and reference systems, the success of MSAR would advance the development of frequency standards and systems for both groundbased and flight-based projects. Current quartz oscillator technology is limited by quartz mechanical Q. With a possible improvement of more than x 10 Q with sapphire acoustic modes, the stability limit of current quartz oscillators may be improved tenfold, to 10(exp -14) at 1 second. The electromagnetic modes of sapphire that were previously developed at JPL require cryogenic temperatures to achieve the high Q levels needed to achieve this stability level. However sapphire fs acoustic modes, which have not been used before in a high-stability oscillator, indicate the required Q values (as high as Q = 10(exp 8)) may be achieved at room temperature in the kHz range. Even though sapphire is not piezoelectric, such a high Q should allow electrostatic excitation of the acoustic modes with a combination of DC and AC voltages across a small sapphire disk (approximately equal to l mm thick). The first evaluations under this task will test predictions of an estimated input impedance of 10 kilohms at Q = 10(exp 8), and explore the Q values that can be realized in a smaller resonator, which has not been previously tested for acoustic modes. This initial Q measurement and excitation demonstration can be viewed similar to a transducer converting electrical energy to

Advances in sapphire optical fiber sensors

NASA Technical Reports Server (NTRS)

Wang, Anbo; Wang, George Z.; Gollapudi, Sridhar; May, Russell G.; Murphy, Kent A.; Claus, Richard O.

1993-01-01

We describe the development and testing of two sapphire fiber sensor designs intended for use in high temperature environments. The first is a birefringence-balanced polarimetric sapphire fiber sensor. In this sensor, two single crystal sapphire rods, acting as the birefringence sensing element, are connected to each other in such a way that the slow axis of the first rod is aligned along with the fast axis of the second rod, and the fast axis of the first rod is along the slow axis of the second rod. This sensor has been demonstrated for measurement of temperature up to 1500 C. The second is a sapphire-fiber-based intrinsic interferometric sensor. In this sensor, a length of uncoated, unclad, structural-graded multimode sapphire fiber is fusion spliced to a singlemode silica fiber to form a Fabry-Perot cavity. The reflections from the silica-to-sapphire fiber splice and the free endface of the sapphire fiber give rise to the interfering fringe output. This sensor has been demonstrated for the measurement of temperature above 1510 C, and a resolution of 0.1 C has been obtained.

Effect of Charging Electron Exposure on 1064nm Transmission Through Bare Sapphire Optics and SiO2 over HfO2 AR-Coated Sapphire Optics

NASA Technical Reports Server (NTRS)

Ottens, Brian P.; Connelly, Joseph; Brown, Stephen; Roeder, James; Kauder, Lonny; Cavanaugh, John

2010-01-01

Experiments measuring the effect of electron exposure on 1064nm transmission for optical sapphire were conducted. Detailed before and after inspections did not identify any resulting Litchenburg patterns. Pre- and post-exposure 1064nm transmission measurements are compared.

Effect of Charging Electron Exposure on 1064nm Transmission through Bare Sapphire Optics and SiO2 over HfO2 AR-coated Sapphire Optics

NASA Technical Reports Server (NTRS)

Ottens, Brian P.; Connelly, Joseph; Brown, Stephen; Roeder, james; Kauder, Lonny; Cavanaugh, John

2008-01-01

Experiments measuring the effect of electron exposure on 1064nm transmission for optical sapphire were conducted. Detailed before and after inspections did not identify any resulting Litchenburg patterns. Pre- and post-exposure 1064nm transmission measurements are compared.

Phototropic growth control of nanoscale pattern formation in photoelectrodeposited Se–Te films

PubMed Central

Sadtler, Bryce; Burgos, Stanley P.; Batara, Nicolas A.; Beardslee, Joseph A.; Atwater, Harry A.; Lewis, Nathan S.

2013-01-01

Photoresponsive materials that adapt their morphologies, growth directions, and growth rates dynamically in response to the local incident electromagnetic field would provide a remarkable route to the synthesis of complex 3D mesostructures via feedback between illumination and the structure that develops under optical excitation. We report the spontaneous development of ordered, nanoscale lamellar patterns in electrodeposited selenium–tellurium (Se–Te) alloy films grown under noncoherent, uniform illumination on unpatterned substrates in an isotropic electrolyte solution. These inorganic nanostructures exhibited phototropic growth in which lamellar stripes grew toward the incident light source, adopted an orientation parallel to the light polarization direction with a period controlled by the illumination wavelength, and showed an increased growth rate with increasing light intensity. Furthermore, the patterns responded dynamically to changes during growth in the polarization, wavelength, and angle of the incident light, enabling the template-free and pattern-free synthesis, on a variety of substrates, of woodpile, spiral, branched, or zigzag structures, along with dynamically directed growth toward a noncoherent, uniform intensity light source. Full-wave electromagnetic simulations in combination with Monte Carlo growth simulations were used to model light–matter interactions in the Se–Te films and produced a model for the morphological evolution of the lamellar structures under phototropic growth conditions. The experiments and simulations are consistent with a phototropic growth mechanism in which the optical near-field intensity profile selects and reinforces the dominant morphological mode in the emergent nanoscale patterns. PMID:24218617

Phototropic growth control of nanoscale pattern formation in photoelectrodeposited Se-Te films.

PubMed

Sadtler, Bryce; Burgos, Stanley P; Batara, Nicolas A; Beardslee, Joseph A; Atwater, Harry A; Lewis, Nathan S

2013-12-03

Photoresponsive materials that adapt their morphologies, growth directions, and growth rates dynamically in response to the local incident electromagnetic field would provide a remarkable route to the synthesis of complex 3D mesostructures via feedback between illumination and the structure that develops under optical excitation. We report the spontaneous development of ordered, nanoscale lamellar patterns in electrodeposited selenium-tellurium (Se-Te) alloy films grown under noncoherent, uniform illumination on unpatterned substrates in an isotropic electrolyte solution. These inorganic nanostructures exhibited phototropic growth in which lamellar stripes grew toward the incident light source, adopted an orientation parallel to the light polarization direction with a period controlled by the illumination wavelength, and showed an increased growth rate with increasing light intensity. Furthermore, the patterns responded dynamically to changes during growth in the polarization, wavelength, and angle of the incident light, enabling the template-free and pattern-free synthesis, on a variety of substrates, of woodpile, spiral, branched, or zigzag structures, along with dynamically directed growth toward a noncoherent, uniform intensity light source. Full-wave electromagnetic simulations in combination with Monte Carlo growth simulations were used to model light-matter interactions in the Se-Te films and produced a model for the morphological evolution of the lamellar structures under phototropic growth conditions. The experiments and simulations are consistent with a phototropic growth mechanism in which the optical near-field intensity profile selects and reinforces the dominant morphological mode in the emergent nanoscale patterns.

Bonding of sapphire to sapphire by eutectic mixture of aluminum oxide and zirconium oxide

NASA Technical Reports Server (NTRS)

Deluca, J. J. (Inventor)

1975-01-01

Bonding of an element comprising sapphire, ruby or blue sapphire to another element of such material with a eutectic mixture of aluminum oxide and zirconium oxide is discussed. The bonding mixture may be applied in the form of a distilled water slurry or by electron beam vapor deposition. In one embodiment the eutectic is formed in situ by applying a layer of zirconium oxide and then heating the assembly to a temperature above the eutectic temperature and below the melting point of the material from which the elements are formed. The formation of a sapphire rubidium maser cell utilizing eutectic bonding is shown.

Temperature dependence of Ti:Sapphire fluorescence spectra for the design of cryogenic cooled Ti:Sapphire CPA laser.

PubMed

Burton, Harry; Debardelaben, Christopher; Amir, Wafa; Planchon, Thomas A

2017-03-20

The fluorescence spectra of titanium doped sapphire (Ti:Sapphire) crystals were measured for temperature ranging from 300K to 77K. The resulting gain cross-section line shapes were calculated and used in a three-dimensional amplification model to illustrate the importance of the precise knowledge of these fluorescence spectra for the design of cryogenic cooled Ti:Sapphire based chirped-pulse laser amplifiers.

Morphological stability of sapphire crystallization front

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baranov, V. V., E-mail: baranov.isc@gmail.com; Nizhankovskyi, S. V.

2016-03-15

The main factors and specificity of growth conditions for sapphire and Ti:sapphire crystals, which affect the morphological stability of the crystal–melt interface, have been investigated with allowance for the concentration and radiative melt supercooling. It is shown that the critical sapphire growth rate is determined to a great extent by the optical transparency of the melt and the mixing conditions near the crystallization front.

Melt inclusions in alluvial sapphires from Montana, USA: Formation of sapphires as a restitic component of lower crustal melting?

NASA Astrophysics Data System (ADS)

Palke, Aaron C.; Renfro, Nathan D.; Berg, Richard B.

2017-05-01

We report here compositions of glassy melt inclusions hosted in sapphires (gem quality corundum) from three alluvial deposits in Montana, USA including the Rock Creek, Dry Cottonwood Creek, and Missouri River deposits. While it is likely that sapphires in these deposits were transported to the surface by Eocene age volcanic events, their ultimate origin is still controversial with many models suggesting the sapphires are xenocrysts with a metamorphic or metasomatic genesis. Melt inclusions are trachytic, dacitic, and rhyolitic in composition. Microscopic observations allow separation between primary and secondary melt inclusions. The primary melt inclusions represent the silicate liquid that was present at the time of sapphire formation and are enriched in volatile components (8-14 wt.%). Secondary melt inclusions analyzed here for Dry Cottonwood Creek and Rock Creek sapphires are relatively volatile depleted and represent the magma that carried the sapphires to the surface. We propose that alluvial Montana sapphires from these deposits formed through a peritectic melting reaction during partial melting of a hydrated plagioclase-rich protolith (e.g. an anorthosite). The heat needed to drive this reaction was likely derived from the intrusion of mantle-derived mafic magmas near the base of the continental lithosphere during rollback of the Farallon slab around 50 Ma. These mafic magmas may have ended up as the ultimate carrier of the sapphires to the surface as evidenced by the French Bar trachybasalt near the Missouri River deposit. Alternatively, the trachytic, rhyolitic, and dacitic secondary melt inclusions at Rock Creek and Dry Cottonwood Creek suggests that the same magmas produced during the partial melting event that generated the sapphires may have also transported them to the surface. Determining the genesis of these deposits will further our understanding of sapphire deposits around the world and may help guide future sapphire prospecting techniques. This

Quantum mechanical modeling the emission pattern and polarization of nanoscale light emitting diodes.

PubMed

Wang, Rulin; Zhang, Yu; Bi, Fuzhen; Frauenheim, Thomas; Chen, GuanHua; Yam, ChiYung

2016-07-21

Understanding of the electroluminescence (EL) mechanism in optoelectronic devices is imperative for further optimization of their efficiency and effectiveness. Here, a quantum mechanical approach is formulated for modeling the EL processes in nanoscale light emitting diodes (LED). Based on non-equilibrium Green's function quantum transport equations, interactions with the electromagnetic vacuum environment are included to describe electrically driven light emission in the devices. The presented framework is illustrated by numerical simulations of a silicon nanowire LED device. EL spectra of the nanowire device under different bias voltages are obtained and, more importantly, the radiation pattern and polarization of optical emission can be determined using the current approach. This work is an important step forward towards atomistic quantum mechanical modeling of the electrically induced optical response in nanoscale systems.

Petrogenesis of alkaline basalt-hosted sapphire megacrysts. Petrological and geochemical investigations of in situ sapphire occurrences from the Siebengebirge Volcanic Field, Germany

NASA Astrophysics Data System (ADS)

Baldwin, L. C.; Tomaschek, F.; Ballhaus, C.; Gerdes, A.; Fonseca, R. O. C.; Wirth, R.; Geisler, T.; Nagel, T.

2017-06-01

Megacrystic sapphires are frequently associated with alkaline basalts, most notably in Asia and Australia, although basalt is not generally normative in corundum. Most of these sapphire occurrences are located in alluvial or eluvial deposits, making it difficult to study the enigmatic relationship between the sapphires and their host rocks. Here, we present detailed petrological and geochemical investigations of in situ megacrystic sapphires within alkaline basalts from the Cenozoic Siebengebirge Volcanic Field (SVF) in Germany. Markedly, the sapphires show several micrometer thick spinel coronas at the contact with the host basalt, indicating chemical disequilibrium between the sapphire and the basaltic melt, supporting a xenogenetic relationship. However, in situ U-Pb dating of a Columbite Group inclusion within one Siebengebirge sapphire using laser ablation-inductively coupled plasma-mass spectrometry (LA-ICP-MS) indicates a close genetic relationship between sapphire crystallization and alkaline mafic volcanism in the SVF. The syngenetic mineral inclusion suite including carbonates, members of the Pyrochlore, Betafite and Columbite Groupe minerals, as well as a high abundance of HFSE and of gaseous low-density CO2 inclusions support a parentage of a highly evolved, MgO and FeO deficient carbonatitic melt. We identified CO2 to be the link between alkaline basaltic volcanism and the xenocrystic sapphires. Only alkaline volcanic suites can build up enough CO2 in this magma chamber upon fractionation so that at high degrees of fractionation a carbonatitic melt exsolves which in turn can crystallize sapphires.

Ti : sapphire laser synchronised with femtosecond Yb pump laser via nonlinear pulse coupling in Ti : sapphire active medium

NASA Astrophysics Data System (ADS)

Didenko, N. V.; Konyashchenko, A. V.; Konyashchenko, D. A.; Kostryukov, P. V.; Kuritsyn, I. I.; Lutsenko, A. P.; Mavritskiy, A. O.

2017-02-01

A laser system utilising the method of synchronous pumping of a Ti : sapphire laser by a high-power femtosecond Yb3+-doped laser is described. The pulse repetition rate of the Ti : sapphire laser is successfully locked to the repetition rate of the Yb laser for more than 6 hours without the use of any additional electronics. The measured timing jitter is shown to be less than 1 fs. A simple qualitative model addressing the synchronisation mechanism utilising the cross-phase modulation of oscillation and pump pulses within a Ti : sapphire active medium is proposed. Output parameters of the Ti : sapphire laser as functions of its cavity length are discussed in terms of this model.

Enhancement of Water Evaporation on Solid Surfaces with Nanoscale Hydrophobic-Hydrophilic Patterns.

PubMed

Wan, Rongzheng; Wang, Chunlei; Lei, Xiaoling; Zhou, Guoquan; Fang, Haiping

2015-11-06

Using molecular dynamics simulations, we show that the evaporation of nanoscale water on hydrophobic-hydrophilic patterned surfaces is unexpectedly faster than that on any surfaces with uniform wettability. The key to this phenomenon is that, on the patterned surface, the evaporation rate from the hydrophilic region only slightly decreases due to the correspondingly increased water thickness; meanwhile, a considerable number of water molecules evaporate from the hydrophobic region despite the lack of water film. Most of the evaporated water from the hydrophobic region originates from the hydrophilic region by diffusing across the contact lines. Further analysis shows that the evaporation rate from the hydrophobic region is approximately proportional to the total length of the contact lines.

Biomimetic patterned surfaces for controllable friction in micro- and nanoscale devices

NASA Astrophysics Data System (ADS)

Singh, Arvind; Suh, Kahp-Yang

2013-12-01

Biomimetics is the study and simulation of biological systems for desired functional properties. It involves the transformation of underlying principles discovered in nature into man-made technologies. In this context, natural surfaces have significantly inspired and motivated new solutions for micro- and nano-scale devices (e.g., Micro/Nano-Electro-Mechanical Systems, MEMS/NEMS) towards controllable friction, during their operation. As a generic solution to reduce friction at small scale, various thin films/coatings have been employed in the last few decades. In recent years, inspiration from `Lotus Effect' has initiated a new research direction for controllable friction with biomimetic patterned surfaces. By exploiting the intrinsic hydrophobicity and ability to reduce contact area, such micro- or nano-patterned surfaces have demonstrated great strength and potential for applications in MEMS/NEMS devices. This review highlights recent advancements on the design, development and performance of these biomimetic patterned surfaces. Also, we present some hybrid approaches to tackle current challenges in biomimetic tribological applications for MEMS/NEMS devices.

Numerical simulation of the distribution of individual gas bubbles in shaped sapphire crystals

NASA Astrophysics Data System (ADS)

Borodin, A. V.; Borodin, V. A.

2017-11-01

The simulation of the effective density of individual gas bubbles in a two-phase melt, consisting of a liquid and gas bubbles, is performed using the virtual model of the thermal unit. Based on the studies, for the first time the theoretically and experimentally grounded mechanism of individual gas bubbles formation in shaped sapphire is proposed. It is shown that the change of the melt flow pattern in crucible affects greatly the bubble density at the crystallization front, and in the crystal. The obtained results allowed reducing the number of individual gas bubbles in sapphire sheets.

The study on the nanomachining property and cutting model of single-crystal sapphire by atomic force microscopy.

PubMed

Huang, Jen-Ching; Weng, Yung-Jin

2014-01-01

This study focused on the nanomachining property and cutting model of single-crystal sapphire during nanomachining. The coated diamond probe is used to as a tool, and the atomic force microscopy (AFM) is as an experimental platform for nanomachining. To understand the effect of normal force on single-crystal sapphire machining, this study tested nano-line machining and nano-rectangular pattern machining at different normal force. In nano-line machining test, the experimental results showed that the normal force increased, the groove depth from nano-line machining also increased. And the trend is logarithmic type. In nano-rectangular pattern machining test, it is found when the normal force increases, the groove depth also increased, but rather the accumulation of small chips. This paper combined the blew by air blower, the cleaning by ultrasonic cleaning machine and using contact mode probe to scan the surface topology after nanomaching, and proposed the "criterion of nanomachining cutting model," in order to determine the cutting model of single-crystal sapphire in the nanomachining is ductile regime cutting model or brittle regime cutting model. After analysis, the single-crystal sapphire substrate is processed in small normal force during nano-linear machining; its cutting modes are ductile regime cutting model. In the nano-rectangular pattern machining, due to the impact of machined zones overlap, the cutting mode is converted into a brittle regime cutting model. © 2014 Wiley Periodicals, Inc.

Neutron Transmission of Single-crystal Sapphire Filters

NASA Astrophysics Data System (ADS)

Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.

2005-05-01

An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum cystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons.

Sharp Morphological Transitions from Nanoscale Mixed-Anchoring Patterns in Confined Nematic Liquid Crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Armas-Pérez, Julio C.; Li, Xiao; Martínez-González, José A.

Liquid crystals are known to be particularly sensitive to orientational cues provided at surfaces or interfaces. In this work, we explore theoretically, computationally, and experimentally the behavior of liquid crystals on isolated nanoscale patterns with controlled anchoring characteristics at small length scales. The orientation of the liquid crystal is controlled through the use of chemically patterned polymer brushes that are tethered to a surface. This system can be engineered with remarkable precision, and the central question addressed here is whether a characteristic length scale exists at which information encoded on a surface is no longer registered by a liquid crystal.more » To do so, we adopt a tensorial description of the free energy of the hybrid liquidcrystal surface system, and we investigate its morphology in a systematic manner. For long and narrow surface stripes, it is found that the liquid crystal follows the instructions provided by the pattern down to 100 nm widths. This is accomplished through the creation of line defects that travel along the sides of the stripes. We show that a "sharp" morphological transition occurs from a uniform undistorted alignment to a dual uniform/splay-bend morphology. The theoretical and numerical predictions advanced here are confirmed by experimental observations. Our combined analysis suggests that nanoscale patterns can be used to manipulate the orientation of liquid crystals at a fraction of the energetic cost that is involved in traditional liquid crystal-based devices. The insights presented in this work have the potential to provide a new fabrication platform to assemble low power bistable devices, which could be reconfigured upon application of small external fields.« less

Leveraging Python Interoperability Tools to Improve Sapphire's Usability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gezahegne, A; Love, N S

2007-12-10

The Sapphire project at the Center for Applied Scientific Computing (CASC) develops and applies an extensive set of data mining algorithms for the analysis of large data sets. Sapphire's algorithms are currently available as a set of C++ libraries. However many users prefer higher level scripting languages such as Python for their ease of use and flexibility. In this report, we evaluate four interoperability tools for the purpose of wrapping Sapphire's core functionality with Python. Exposing Sapphire's functionality through a Python interface would increase its usability and connect its algorithms to existing Python tools.

Surface-mount sapphire interferometric temperature sensor.

PubMed

Zhu, Yizheng; Wang, Anbo

2006-08-20

A fiber-optic high-temperature sensor is demonstrated by bonding a 45 degrees -polished single-crystal sapphire fiber on the surface of a sapphire wafer, whose optical thickness is temperature dependent and measured by white-light interferometry. A novel adhesive-free coupling between the silica and sapphire fibers is achieved by fusion splicing, and its performance is characterized. The sensor's interference signal is investigated for its dependence on angular alignment between the fiber and the wafer. A prototype sensor is tested to 1,170 degrees C with a resolution of 0.4 degrees C, demonstrating excellent potential for high-temperature measurement.

Mode-converting coupler for silicon-on-sapphire devices

NASA Astrophysics Data System (ADS)

Zlatanovic, S.; Offord, B. W.; Owen, M.; Shimabukuro, R.; Jacobs, E. W.

2015-02-01

Silicon-on-sapphire devices are attractive for the mid-infrared optical applications up to 5 microns due to the low loss of both silicon and sapphire in this wavelength band. Designing efficient couplers for silicon-on-sapphire devices presents a challenge due to a highly confined mode in silicon and large values of refractive index of both silicon and sapphire. Here, we present design, fabrication, and measurements of a mode-converting coupler for silicon-on-sapphire waveguides. We utilize a mode converter layout that consists of a large waveguide that is overlays a silicon inverse tapered waveguide. While this geometry was previously utilized for silicon-on-oxide devices, the novelty is in using materials that are compatible with the silicon-on-sapphire platform. In the current coupler the overlaying waveguide is made of silicon nitride. Silicon nitride is the material of choice because of the large index of refraction and low absorption from near-infrared to mid-infrared. The couplers were fabricated using a 0.25 micron silicon-on-sapphire process. The measured coupling loss from tapered lensed silica fibers to the silicon was 4.8dB/coupler. We will describe some challenges in fabrication process and discuss ways to overcome them.

Nanoscale patterning of two metals on silicon surfaces using an ABC triblock copolymer template.

PubMed

Aizawa, Masato; Buriak, Jillian M

2006-05-03

Patterning technologically important semiconductor interfaces with nanoscale metal films is important for applications such as metallic interconnects and sensing applications. Self-assembling block copolymer templates are utilized to pattern an aqueous metal reduction reaction, galvanic displacement, on silicon surfaces. Utilization of a triblock copolymer monolayer film, polystyrene-block-poly(2-vinylpyridine)-block-poly(ethylene oxide) (PS-b-P2VP-b-PEO), with two blocks capable of selective transport of different metal complexes to the surface (PEO and P2VP), allows for chemical discrimination and nanoscale patterning. Different regions of the self-assembled structure discriminate between metal complexes at the silicon surface, at which time they undergo the spontaneous reaction at the interface. Gold deposition from gold(III) compounds such as HAuCl4(aq) in the presence of hydrofluoric acid mirrors the parent block copolymer core structure, whereas silver deposition from Ag(I) salts such as AgNO3(aq) does the opposite, localizing exclusively under the corona. By carrying out gold deposition first and silver second, sub-100-nm gold features surrounded by silver films can be produced. The chemical selectivity was extended to other metals, including copper, palladium, and platinum. The interfaces were characterized by a variety of methods, including scanning electron microscopy, scanning Auger microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy.

Cracking-assisted fabrication of nanoscale patterns for micro/nanotechnological applications

NASA Astrophysics Data System (ADS)

Kim, Minseok; Kim, Dong-Joo; Ha, Dogyeong; Kim, Taesung

2016-05-01

Cracks are frequently observed in daily life, but they are rarely welcome and are considered as a material failure mode. Interestingly, cracks cause critical problems in various micro/nanofabrication processes such as colloidal assembly, thin film deposition, and even standard photolithography because they are hard to avoid or control. However, increasing attention has been given recently to control and use cracks as a facile, low-cost strategy for producing highly ordered nanopatterns. Specifically, cracking is the breakage of molecular bonds and occurs simultaneously over a large area, enabling fabrication of nanoscale patterns at both high resolution and high throughput, which are difficult to obtain simultaneously using conventional nanofabrication techniques. In this review, we discuss various cracking-assisted nanofabrication techniques, referred to as crack lithography, and summarize the fabrication principles, procedures, and characteristics of the crack patterns such as their position, direction, and dimensions. First, we categorize crack lithography techniques into three technical development levels according to the directional freedom of the crack patterns: randomly oriented, unidirectional, or multidirectional. Then, we describe a wide range of novel practical devices fabricated by crack lithography, including bioassay platforms, nanofluidic devices, nanowire sensors, and even biomimetic mechanosensors.

Reduced cost and improved figure of sapphire optical components

NASA Astrophysics Data System (ADS)

Walters, Mark; Bartlett, Kevin; Brophy, Matthew R.; DeGroote Nelson, Jessica; Medicus, Kate

2015-10-01

Sapphire presents many challenges to optical manufacturers due to its high hardness and anisotropic properties. Long lead times and high prices are the typical result of such challenges. The cost of even a simple 'grind and shine' process can be prohibitive. The high precision surfaces required by optical sensor applications further exacerbate the challenge of processing sapphire thereby increasing cost further. Optimax has demonstrated a production process for such windows that delivers over 50% time reduction as compared to traditional manufacturing processes for sapphire, while producing windows with less than 1/5 wave rms figure error. Optimax's sapphire production process achieves significant improvement in cost by implementation of a controlled grinding process to present the best possible surface to the polishing equipment. Following the grinding process is a polishing process taking advantage of chemical interactions between slurry and substrate to deliver excellent removal rates and surface finish. Through experiments, the mechanics of the polishing process were also optimized to produce excellent optical figure. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. Through specially developed polishing slurries, the peak-to-valley figure error of spherical sapphire parts is reduced by over 80%.

High-quality AlN grown on a thermally decomposed sapphire surface

NASA Astrophysics Data System (ADS)

Hagedorn, S.; Knauer, A.; Brunner, F.; Mogilatenko, A.; Zeimer, U.; Weyers, M.

2017-12-01

In this study we show how to realize a self-assembled nano-patterned sapphire surface on 2 inch diameter epi-ready wafer and the subsequent AlN overgrowth both in the same metal-organic vapor phase epitaxial process. For this purpose in-situ annealing in H2 environment was applied prior to AlN growth to thermally decompose the c-plane oriented sapphire surface. By proper AlN overgrowth management misoriented grains that start to grow on non c-plane oriented facets of the roughened sapphire surface could be overcome. We achieved crack-free, atomically flat AlN layers of 3.5 μm thickness. The layers show excellent material quality homogeneously over the whole wafer as proved by the full width at half maximum of X-ray measured ω-rocking curves of 120 arcsec to 160 arcsec for the 002 reflection and 440 arcsec to 550 arcsec for the 302 reflection. The threading dislocation density is 2 ∗ 109 cm-2 which shows that the annealing and overgrowth process investigated in this work leads to cost-efficient AlN templates for UV LED devices.

Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire. II. Electron energy loss spectroscopic study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sung Bo, E-mail: bolee@snu.ac.kr; Han, Heung Nam, E-mail: hnhan@snu.ac.kr; Kim, Young-Min

In Part I, we have shown that the addition of Si into sapphire by ion implantationmakes the sapphire substrate elastically softer than for the undoped sapphire. The more compliant layer of the Si-implanted sapphire substrate can absorb the misfit stress at the GaN/sapphire interface, which produces a lower threading-dislocation density in the GaN overlayer. Here in Part II, based on experimental results by electron energy loss spectroscopy and a first-principle molecular orbital calculation in the literature, we suggest that the softening effect of Si results from a reduction of ionic bonding strength in sapphire (α-Al{sub 2}O{sub 3}) with the substitutionmore » of Si for Al.« less

Sapphire Fabry-Perot high-temperature sensor study

NASA Astrophysics Data System (ADS)

Yao, Yi-qiang; Liang, Wei-long; Gui, Xinwang; Fan, Dian

2017-04-01

A new structure sapphire fiber Fabry-Perot (F-P) high-temperature sensor based on sapphire wafer was proposed and fabricated. The sensor uses the sapphire fiber as a transmission waveguide, the sapphire wafer as an Fabry-Perot (F-P) interferometer and the new structure of "Zirconia ferrule-Zirconia tube" as the sensor fixing structure of the sensor. The reflection spectrum of the interferometer was demodulated by a serial of data processing including FIR bandpass filter, FFT (Fast Fourier Transformation) estimation and LSE (least squares estimation) compensation to obtain more precise OPD. Temperature measurement range is from 20 to 1000°C in experiment. The experimental results show that the sensor has the advantages of small size, low cost, simple fabrication and high repeatability. It can be applied for longterm, stable and high-precision high temperature measurement in harsh environments.

Sapphire capillary interstitial irradiators for laser medicine

NASA Astrophysics Data System (ADS)

Shikunova, I. A.; Dolganova, I. N.; Dubyanskaya, E. N.; Mukhina, E. E.; Zaytsev, K. I.; Kurlov, V. N.

2018-04-01

In this paper, we demonstrate instruments for laser radiation delivery based on sapphire capillary needles. Such sapphire irradiators (introducers) can be used for various medical applications, such as photodynamic therapy, laser hyperthermia, laser interstitial thermal therapy, and ablation of tumors of various organs. Unique properties of sapphire allow for effective redistribution of the heat, generated in biological tissues during their exposure to laser radiation. This leads to homogeneous distribution of the laser irradiation around the needle, and lower possibility of formation of the overheating focuses, as well as the following non-transparent thrombi.

Synthesis and characterizations of nanoscale single crystal GaN grown by ion assisted gas source MBE

NASA Astrophysics Data System (ADS)

Cui, Bentao; Cohen, P. I.

2004-03-01

Nanoscale patterns could be induced by ion bombardment [1, 2]. In this study, an in-situ real time light scattering technique, combined with Reflection High Energy Electron Diffraction (RHEED), were used to study the surface morphology evolution during the ion beam assisted growth of GaN in a gas source MBE system. Ga was provided by a thermal effusion cell. Ammonia was used as the nitrogen source. A hot-filament Kaufman ion source was used to supply sub-KeV ion beams. Sapphire and MOCVD GaN templates were used as the substrates. A custom-designed Desorption Mass Spectrometer (DMS) was used to calibrate the growth temperature and determine the growth rate. Before growing GaN, the sapphire substrates were pretreated in an ion flux and then annealed for cleaning. The sapphire surface was then nitrided in ammonia at 1100K for about 10 min. After nitridation, a thin GaN buffer layer was prepared by a sequence of adsorption and annealing steps. During the growth, the short-range surface morphology and film quality were monitored in situ by RHEED. In a real-time way, the long-range surface morphology was monitored in-situ by light scattering technique. Photodiode array detector and CCD camera were used to record the reflected light scattering intensity and spectra profile respectively. Periodical patterns, such as ripple, have been observed during ion bombardment on GaN with or without growth. A linear theory (from Bradley and Harper 1988 [3]) has been modified to explain the dependence of ripple wavelength on ion species and ion energy. Partially supported by the National Science Foundation and the Air Force Office of Scientific Research. [1]. J. Erlebacher, M. J. Aziz, E. Chason, M. B. Sinclair, and J. A. Floro, Phys. Rev. Lett. 82, 2330 (1998); J. Erlebacher, M. J. Aziz, E. Chason, M. B. Sinclair, and J. A. Floro, Phys. Rev. Lett. 84, 5800 (2000). [2]. S. Facsko, T. Dekorsy, C. Koerdt, C. Trappe, H. Kurz, A. Vogt et al.. Science 285, 1551 (1999). [3]. R. M. Bradley

Periodic nanoscale patterning of polyelectrolytes over square centimeter areas using block copolymer templates

DOE PAGES

Oded, Meirav; Kelly, Stephen T.; Gilles, Mary K.; ...

2016-04-07

Nano-patterned materials are beneficial for applications such as solar cells, opto-electronics, and sensing owing to their periodic structure and high interfacial area. We present a non-lithographic approach for assembling polyelectrolytes into periodic nanoscale patterns over cm 2 -scale areas. We used chemically modified block copolymer thin films featuring alternating charged and neutral domains as patterned substrates for electrostatic self-assembly. In-depth characterization of the deposition process using spectroscopy and microscopy techniques, including the state-of-the-art scanning transmission X-ray microscopy (STXM), reveals both the selective deposition of the polyelectrolyte on the charged copolymer domains as well as gradual changes in the film topographymore » that arise from further penetration of the solvent molecules and possibly also the polyelectrolyte into these domains. Our results demonstrate the feasibility of creating nano-patterned polyelectrolyte layers, which opens up new opportunities for structured functional coating fabrication.« less

Complex Investigations of Sapphire Crystals Production

NASA Astrophysics Data System (ADS)

Malyukov, S. P.; Klunnikova, Yu V.

The problem of optimum conditions choice for processing sapphire substrates was solved with optimization methods and with combination of analytical simulation methods, experiment and expert system technology. The experimental results and software give rather full information on features of real structure of the sapphire crystal substrates and can be effectively used for optimization of technology of the substrate preparation for electronic devices.

Temperature dependence of sapphire fiber Raman scattering

DOE PAGES

Liu, Bo; Yu, Zhihao; Tian, Zhipeng; ...

2015-04-27

Anti-Stokes Raman scattering in sapphire fiber has been observed for the first time. Temperature dependence of Raman peaks’ intensity, frequency shift, and linewidth were also measured. Three anti-Stokes Raman peaks were observed at temperatures higher than 300°C in a 0.72-m-long sapphire fiber excited by a second-harmonic Nd YAG laser. The intensity of anti-Stokes peaks are comparable to that of Stokes peaks when the temperature increases to 1033°C. We foresee the combination of sapphire fiber Stokes and anti-Stokes measurement in use as a mechanism for ultrahigh temperature sensing.

Wafer scale BN on sapphire substrates for improved graphene transport.

PubMed

Vangala, Shivashankar; Siegel, Gene; Prusnick, Timothy; Snure, Michael

2018-06-11

Wafer scale (2") BN grown by metal organic chemical vapor deposition (MOCVD) on sapphire was examined as a weakly interacting dielectric substrate for graphene, demonstrating improved transport properties over conventional sapphire and SiO 2 /Si substrates. Chemical vapor deposition grown graphene was transferred to BN/sapphire substrates for evaluation of more than 30 samples using Raman and Hall effects measurements. A more than 2x increase in Hall mobility and 10x reduction in sheet carrier density was measured for graphene on BN/sapphire compared to sapphire substrates. Through control of the MOCVD process, BN films with roughness ranging from <0.1 nm to >1 nm were grown and used to study the effects of substrate roughness on graphene transport. Arrays of graphene field effect transistors were fabricated on 2" BN/sapphire substrates demonstrating scalability and device performance enhancement.

Controllable laser thermal cleavage of sapphire wafers

NASA Astrophysics Data System (ADS)

Xu, Jiayu; Hu, Hong; Zhuang, Changhui; Ma, Guodong; Han, Junlong; Lei, Yulin

2018-03-01

Laser processing of substrates for light-emitting diodes (LEDs) offers advantages over other processing techniques and is therefore an active research area in both industrial and academic sectors. The processing of sapphire wafers is problematic because sapphire is a hard and brittle material. Semiconductor laser scribing processing suffers certain disadvantages that have yet to be overcome, thereby necessitating further investigation. In this work, a platform for controllable laser thermal cleavage was constructed. A sapphire LED wafer was modeled using the finite element method to simulate the thermal and stress distributions under different conditions. A guide groove cut by laser ablation before the cleavage process was observed to guide the crack extension and avoid deviation. The surface and cross section of sapphire wafers processed using controllable laser thermal cleavage were characterized by scanning electron microscopy and optical microscopy, and their morphology was compared to that of wafers processed using stealth dicing. The differences in luminous efficiency between substrates prepared using these two processing methods are explained.

Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structure

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)

2016-01-01

One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates

NASA Astrophysics Data System (ADS)

Jmerik, V. N.; Kuznetsova, N. V.; Nechaev, D. V.; Shubina, T. V.; Kirilenko, D. A.; Troshkov, S. I.; Davydov, V. Yu.; Smirnov, A. N.; Ivanov, S. V.

2017-11-01

The site-controlled selective area growth of N-polar GaN nanorods (NR) was developed by plasma-assisted MBE (PA MBE) on micro-cone-patterned sapphire substrates (μ-CPSS) by using a two-stage growth process. A GaN nucleation layer grown by migration enhanced epitaxy provides the best selectivity for nucleation of NRs on the apexes of 3.5-μm-diameter cones, whereas the subsequent growth of 1-μm-high NRs with a constant diameter of about 100 nm proceeds by standard high-temperature PA MBE at nitrogen-rich conditions. These results are explained by anisotropy of the surface energy for GaN of different polarity and crystal orientation. The InGaN single quantum wells inserted in the GaN NRs grown on the μ-CPSS demonstrate photoluminescence at 510 nm with a spatially periodic variation of its intensity with a period of ∼6 μm equal to that of the substrate patterning profile.

Electron Beam Welder Used to Braze Sapphire to Platinum

NASA Technical Reports Server (NTRS)

Forsgren, Roger C.; Vannuyen, Thomas

1998-01-01

A new use for electron beam brazing was recently developed by NASA Lewis Research Center's Manufacturing Engineering Division. This work was done to fabricate a fiberoptic probe (developed by Sentec Corporation) that could measure high temperatures less than 600 deg C of vibrating machinery, such as in jet engine combustion research. Under normal circumstances, a sapphire fiber would be attached to platinum by a ceramic epoxy. However, no epoxies can adhere ceramic fibers to platinum under such high temperatures and vibration. Also, since sapphire and platinum have different thermal properties, the epoxy bond is subjected to creep over time. Therefore, a new method had to be developed that would permanently and reliably attach a sapphire fiber to platinum. Brazing a sapphire fiber to a platinum shell. The fiber-optic probe assembly consists of a 0.015-in.-diameter sapphire fiber attached to a 0.25-in.-long, 0.059-in.-diameter platinum shell. Because of the small size of this assembly, electron beam brazing was chosen instead of conventional vacuum brazing. The advantage of the electron beam is that it can generate a localized heat source in a vacuum. Gold reactive braze was used to join the sapphire fiber and the platinum. Consequently, the sapphire fiber was not affected by the total heat needed to braze the components together.

Modern trends in crystal growth and new applications of sapphire

NASA Astrophysics Data System (ADS)

Akselrod, Mark S.; Bruni, Frank J.

2012-12-01

We provide an overview of the latest market trends and modern competing methods of sapphire crystal growth and the application of sapphire wafers as LED substrates. Almost all methods of high temperature growth from the melt are suitable for sapphire production, but each of these methods has its advantages and disadvantages depending on the application and required finished product form factor. Special attention is paid to the review of defects and imperfections that allow the engineering of new active devices based on sapphire.

Evolution of the sapphire industry: Rubicon Technology and Gavish

NASA Astrophysics Data System (ADS)

Harris, Daniel C.

2009-05-01

A. Verneuil developed flame fusion to grow sapphire and ruby on a commercial scale around 1890. Flame fusion was further perfected by Popov in the Soviet Union in the 1930s and by Linde Air Products Co. in the U.S. during World War II. Union Carbide Corp., the successor to Linde, developed Czochralski crystal growth for sapphire laser materials in the 1960s. Stepanov in the Soviet Union published his sapphire growth method in 1959. Edge-Defined Film-Fed Growth (EFG), which is similar to the Stepanov method, was developed by H. Labelle in the U. S. in the 1960s and 1970s. The Heat Exchanger Method (HEM), invented by F. Schmid and D. Viechnicki in 1967 was commercialized in the 1970s. Gradient solidification was invented in Israel in the 1970s by J. Makovsky. The Horizontal Directional Solidification Method (HDSM) proposed by Kh. S. Bagdasorov in the Soviet Union in the 1960s was further developed at the Institute for Single Crystals in Ukraine. Kyropoulos growth of sapphire, known as GOI crystal growth in the Soviet Union, was developed by M. Musatov at the State Optical Institute in St. Petersburg in the 1970s and 1980s. At the Institute for Single Crystals in Ukraine, E. Dobrovinskaya characterized Verneuil, Czochralsky, Bagdasarov, and GOI sapphire. In 1995, she emigrated to the United States and joined S&R Rubicon, founded near Chicago by R. Mogilevsky initially to import sapphire and ruby. Mogilevsky began producing sapphire by the Kyropoulos method in 1999. In 2000 the company name was changed to Rubicon Technology. Today, Dobrovinskaya is Chief Scientist and Rubicon produces high quality Kyropoulos sapphire substrates for solid-state lighting. In 1995, H. Branover of Ben Gurion University and a sole investor founded Gavish, which is Hebrew for "crystal." They invited another veteran of the Ukrainian Institute for Single Crystals, V. Pishchik, to become Chief Scientist. Under Pishchik's technical leadership and J. Sragowicz's business leadership, Gavish now

Oleophobic properties of the step-and-terrace sapphire surface

NASA Astrophysics Data System (ADS)

Muslimov, A. E.; Butashin, A. V.; Kanevsky, V. M.

2017-03-01

Sapphire is widely used in production of optical windows for various devices due to its mechanical and optical properties. However, during operation the surface can be affected by fats, oils, and other organic contaminations. Therefore, it is important to improve the oleophobic properties of sapphire windows. In this study, we investigate the interaction of a supersmooth sapphire surface with oleic acid droplets, which imitate human finger printing. It is established that chemical-mechanical polishing with additional annealing in air, which leads to the formation of an atomically smooth sapphire surface, makes it possible to significantly improve the oleophobic properties of the surface. The results are analyzed using the Ventsel-Deryagin homogeneous wetting model.

Oleophobic properties of the step-and-terrace sapphire surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V.; Kanevsky, V. M.

Sapphire is widely used in production of optical windows for various devices due to its mechanical and optical properties. However, during operation the surface can be affected by fats, oils, and other organic contaminations. Therefore, it is important to improve the oleophobic properties of sapphire windows. In this study, we investigate the interaction of a supersmooth sapphire surface with oleic acid droplets, which imitate human finger printing. It is established that chemical–mechanical polishing with additional annealing in air, which leads to the formation of an atomically smooth sapphire surface, makes it possible to significantly improve the oleophobic properties of themore » surface. The results are analyzed using the Ventsel–Deryagin homogeneous wetting model.« less

Surface study of irradiated sapphires from Phrae Province, Thailand using AFM

NASA Astrophysics Data System (ADS)

Monarumit, N.; Jivanantaka, P.; Mogmued, J.; Lhuaamporn, T.; Satitkune, S.

2017-09-01

The irradiation is one of the gemstone enhancements for improving the gem quality. Typically, there are many varieties of irradiated gemstones in the gem market such as diamond, topaz, and sapphire. However, it is hard to identify the gemstones before and after irradiation. The aim of this study is to analyze the surface morphology for classifying the pristine and irradiated sapphires using atomic force microscope (AFM). In this study, the sapphire samples were collected from Phrae Province, Thailand. The samples were irradiated by high energy electron beam for a dose of ionizing radiation at 40,000 kGy. As the results, the surface morphology of pristine sapphires shows regular atomic arrangement, whereas, the surface morphology of irradiated sapphires shows the nano-channel observed by the 2D and 3D AFM images. The atomic step height and root mean square roughness have changed after irradiation due to the micro-structural defect on the sapphire surface. Therefore, this study is a frontier application for sapphire identification before and after irradiation.

Buffer layers for high-Tc thin films on sapphire

NASA Technical Reports Server (NTRS)

Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.

1992-01-01

Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

Sapphire: Canada's Answer to Space-Based Surveillance of Orbital Objects

NASA Astrophysics Data System (ADS)

Maskell, P.; Oram, L.

The Canadian Department of National Defence is in the process of developing the Canadian Space Surveillance System (CSSS) as the main focus of the Surveillance of Space (SofS) Project. The CSSS consists of two major elements: the Sapphire System and the Sensor System Operations Centre (SSOC). The space segment of the Sapphire System is comprised of the Sapphire Satellite - an autonomous spacecraft with an electro-optical payload which will act as a contributing sensor to the United States (US) Space Surveillance Network (SSN). It will operate in a circular, sunsynchronous orbit at an altitude of approximately 750 kilometers and image a minimum of 360 space objects daily in orbits ranging from 6,000 to 40,000 kilometers in altitude. The ground segment of the Sapphire System is composed of a Spacecraft Control Center (SCC), a Satellite Processing and Scheduling Facility (SPSF), and the Sapphire Simulator. The SPSF will be responsible for data transmission, reception, and processing while the SCC will serve to control and monitor the Sapphire Satellite. Surveillance data will be received from Sapphire through two ground stations. Following processing by the SPSF, the surveillance data will then be forwarded to the SSOC. The SSOC will function as the interface between the Sapphire System and the US Joint Space Operations Center (JSpOC). The JSpOC coordinates input from various sensors around the world, all of which are a part of the SSN. The SSOC will task the Sapphire System daily and provide surveillance data to the JSpOC for correlation with data from other SSN sensors. This will include orbital parameters required to predict future positions of objects to be tracked. The SSOC receives daily tasking instructions from the JSpOC to determine which objects the Sapphire spacecraft is required to observe. The advantage of this space-based sensor over ground-based telescopes is that weather and time of day are not factors affecting observation. Thus, space-based optical

High power continuous-wave titanium:sapphire laser

DOEpatents

Erbert, G.V.; Bass, I.L.; Hackel, R.P.; Jenkins, S.L.; Kanz, V.K.; Paisner, J.A.

1993-09-21

A high-power continuous-wave laser resonator is provided, wherein first, second, third, fourth, fifth and sixth mirrors form a double-Z optical cavity. A first Ti:sapphire rod is disposed between the second and third mirrors and at the mid-point of the length of the optical cavity, and a second Ti:sapphire rod is disposed between the fourth and fifth mirrors at a quarter-length point in the optical cavity. Each Ti:sapphire rod is pumped by two counter-propagating pump beams from a pair of argon-ion lasers. For narrow band operation, a 3-plate birefringent filter and an etalon are disposed in the optical cavity so that the spectral output of the laser consists of 5 adjacent cavity modes. For increased power, seventy and eighth mirrors are disposed between the first and second mirrors to form a triple-Z optical cavity. A third Ti:sapphire rod is disposed between the seventh and eighth mirrors at the other quarter-length point in the optical cavity, and is pumped by two counter-propagating pump beams from a third pair of argon-ion lasers. 5 figures.

Defect analysis of the LED structure deposited on the sapphire substrate

NASA Astrophysics Data System (ADS)

Nie, Qichu; Jiang, Zhimin; Gan, Zhiyin; Liu, Sheng; Yan, Han; Fang, Haisheng

2018-04-01

Transmission electron microscope (TEM) and double-crystal X-ray diffraction (DCXRD) measurements have been performed to investigate dislocations of the whole structure of the LED layers deposited on both the conventional (unpatterned sapphire substrate, UPSS) and patterned sapphire substrates (PSS). TEM results show that there exists a dislocation-accumulated region near the substrate/GaN interface, where the dislocation density is much higher with the UPPS than that with the PSS. It indicates that the pattern on the substrate surface is able to block the formation and propagation of dislocations. Further analysis discloses that slope of the pattern is found to suppress the deposition of GaN, and thus to provide more spaces for the epitaxially lateral overgrowth (ELO) of high temperature GaN, which significantly reduces the number of the initial islands, and minimizes dislocation formation due to the island coalescence. V-defect incorporating the threading dislocation is detected in the InGaN/GaN multi-quantum wells (MQWs), and its propagation mechanism is determined as the decrease of the surface energy due to the incorporation of indium. In addition, temperature dependence of dislocation formation is further investigated. The results show that dislocation with the screw component decreases monotonously as temperature goes up. However, edge dislocation firstly drops, and then increases by temperature due to the enhanced thermal mismatch stress. It implies that an optimized range of the growth temperature can be obtained to improve quality of the LED layers.

The improvement of GaN-based LED grown on concave nano-pattern sapphire substrate with SiO2 blocking layer

NASA Astrophysics Data System (ADS)

Lin, Jyun-Hao; Huang, Shyh-Jer; Su, Yan-Kuin; Huang, Kai-Wen

2015-11-01

In contrast to convex nano-pattern sapphire substrates (NPSS), which are frequently used to fabricate high-quality nitride-based light-emitting diodes (LEDs), concave NPSS have been paid relatively less attention. In this study, a concave NPSS was fabricated, and its nitride epitaxial growth process was evaluated in a step by step manner. A SiO2 layer was used to avoid nucleation over the sidewall and bottom of the nano-patterns to reduce dislocation reformation. Traditional LED structures were grown on the NPSS layer to determine its influence on device performance. X-ray diffraction, etched pit density, inverse leakage current, and internal quantum efficiency (IQE) results showed that dislocations and non-radiative recombination centers are reduced by the NPSS constructed with a SiO2 blocking layer. An IQE twice that on a planar substrate was also achieved; such a high IQE significantly enhanced the external quantum efficiency of the resultant device. Taken together, the results demonstrate that the SiO2 blocking layer proposed in this work can enhance the performance of LEDs.

Sapphire shaped crystals for laser-assisted cryodestruction of biological tissues

NASA Astrophysics Data System (ADS)

Shikunova, I. A.; Dubyanskaya, E. N.; Kuznetsov, A. A.; Katyba, G. M.; Dolganova, I. N.; Mukhina, E. E.; Chernomyrdin, N. V.; Zaytsev, K. I.; Tuchin, V. V.; Kurlov, V. N.

2018-04-01

We have developed cryo-applicators based on the sapphire shaped crystals fabricated using the edge-defined film-fed growth (EFG) and noncapillary shaping (NCS) techniques. Due to the unique physical properties of sapphire: i.e. high thermal, mechanical, and chemical strength, impressive thermal conductivity and optical transparency, these cryo-applicators yield combination of the tissue cryo-destruction with its exposure to laser radiation for controlling the thermal regimes of cryosurgery, and with the optical diagnosis of tissue freezing. We have applied the proposed sapphire cryo-applicators for the destruction of tissues in vitro. The observed results highlight the prospectives of the sapphire cryo-applicators in cryosurgery.

Submicron diameter single crystal sapphire optical fiber

DOE PAGES

Hill, Cary; Homa, Daniel; Liu, Bo; ...

2014-10-02

In this work, a submicron-diameter single crystal sapphire optical fiber was demonstrated via wet acid etching at elevated temperatures. Etch rates on the order 2.3 µm/hr were achievable with a 3:1 molar ratio sulfuric-phosphoric acid solution maintained at a temperature of 343°C. A sapphire fiber with an approximate diameter of 800 nm was successfully fabricated from a commercially available fiber with an original diameter of 50 µm. The simple and controllable etching technique provides a feasible approach to the fabrication of unique waveguide structures via traditional silica masking techniques. The ability to tailor the geometry of sapphire optical fibers ismore » the first step in achieving optical and sensing performance on par with its fused silica counterpart.« less

A peek into the history of sapphire crystal growth

NASA Astrophysics Data System (ADS)

Harris, Daniel C.

2003-09-01

After the chemical compositions of sapphire and ruby were unraveled in the middle of the 19th century, chemists set out to grow artificial crystals of these valuable gemstones. In 1885 a dealer in Geneva began to sell ruby that is now believed to have been created by flame fusion. Gemnologists rapidly concluded that the stones were artificial, but the Geneva ruby stimulated A. V. L. Verneuil in Paris to develop a flame fusion process to produce higher quality ruby and sapphire. By 1900 there was brisk demand for ruby manufactured by Verneuil's method, even though Verneuil did not publicly announce his work until 1902 and did not publish details until 1904. The Verneuil process was used with little alteration for the next 50 years. From 1932-1953, S. K. Popov in the Soviet Union established a capability for manufacturing high quality sapphire by the Verneuil process. In the U.S., under government contract, Linde Air Products Co. implemented the Verneuil process for ruby and sapphire when European sources were cut off during World War II. These materials were essential to the war effort for jewel bearings in precision instruments. In the 1960s and 1970s, the Czochralski process was implemented by Linde and its successor, Union Carbide, to make higher crystal quality material for ruby lasers. Stimulated by a government contract for structural fibers in 1966, H. LaBelle invented edge-defined film-fed growth (EFG). The Saphikon company, which is currently owned by Saint-Gobain, evolved from this effort. Independently and simultaneously, Stepanov developed edge-defined film-fed growth in the Soviet Union. In 1967 F. Schmid and D. Viechnicki at the Army Materials Research Lab grew sapphire by the heat exchanger method (HEM). Schmid went on to establish Crystal Systems, Inc. around this technology. Rotem Industries, founded in Israel in 1969, perfected the growth of sapphire hemispheres and near-net-shape domes by gradient solidification. In the U.S., growth of near

Nanostructured sapphire optical fiber for sensing in harsh environments

NASA Astrophysics Data System (ADS)

Chen, Hui; Liu, Kai; Ma, Yiwei; Tian, Fei; Du, Henry

2017-05-01

We describe an innovative and scalable strategy of transforming a commercial unclad sapphire optical fiber to an allalumina nanostructured sapphire optical fiber (NSOF) that overcomes decades-long challenges faced in the field of sapphire fiber optics. The strategy entails fiber coating with metal Al followed by subsequent anodization to form anodized alumina oxide (AAO) cladding of highly organized pore channel structure. We show that Ag nanoparticles entrapped in AAO show excellent structural and morphological stability and less susceptibility to oxidation for potential high-temperature surface-enhanced Raman Scattering (SERS). We reveal, with aid of numerical simulations, that the AAO cladding greatly increases the evanescent-field overlap both in power and extent and that lower porosity of AAO results in higher evanescent-field overlap. This work has opened the door to new sapphire fiber-based sensor design and sensor architecture.

High power continuous-wave titanium:sapphire laser

DOEpatents

Erbert, Gaylen V.; Bass, Isaac L.; Hackel, Richard P.; Jenkins, Sherman L.; Kanz, Vernon K.; Paisner, Jeffrey A.

1993-01-01

A high-power continuous-wave laser resonator (10) is provided, wherein first, second, third, fourth, fifth and sixth mirrors (11-16) form a double-Z optical cavity. A first Ti:Sapphire rod (17) is disposed between the second and third mirrors (12,13) and at the mid-point of the length of the optical cavity, and a second Ti:Sapphire rod (18) is disposed between the fourth and fifth mirrors (14,15) at a quarter-length point in the optical cavity. Each Ti:Sapphire rod (17,18) is pumped by two counter-propagating pump beams from a pair of argon-ion lasers (21-22, 23-24). For narrow band operation, a 3-plate birefringent filter (36) and an etalon (37) are disposed in the optical cavity so that the spectral output of the laser consists of 5 adjacent cavity modes. For increased power, seventy and eighth mirrors (101, 192) are disposed between the first and second mirrors (11, 12) to form a triple-Z optical cavity. A third Ti:Sapphire rod (103) is disposed between the seventh and eighth mirrors (101, 102) at the other quarter-length point in the optical cavity, and is pumped by two counter-propagating pump beams from a third pair of argon-ion lasers (104, 105).

Characterization and mechanism of He plasma pretreatment of nanoscale polymer masks for improved pattern transfer fidelity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weilnboeck, F.; Metzler, D.; Kumar, N.

2011-12-26

Roughening of nanoscale polymer masks during plasma etching (PE) limits feature critical dimensions in current and future lithographic technologies. Roughness formation of 193 nm photoresist (PR) is mechanistically explained by plasma-induced changes in mechanical properties introduced at the PR surface ({approx}2 nm) by ions and in parallel in the material bulk ({approx}200 nm) by ultraviolet (UV) plasma radiation. Synergistic roughening of polymer masks can be prevented by pretreating PR patterns with a high dose of He plasma UV exposure to saturate bulk material modifications. During subsequent PE, PR patterns are stabilized and exhibit improved etch resistance and reduced surface/line-edge roughness.

Temperature-modulated annealing of c-plane sapphire for long-range-ordered atomic steps

NASA Astrophysics Data System (ADS)

Yatsui, Takashi; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao; Yoshimoto, Mamoru

2016-03-01

High-quality single-crystalline sapphire is used to prepare various semiconductors because of its thermal stability. Here, we applied the tempering technique, which is well known in the production of chocolate, to prepare a sapphire substrate. Surprisingly, we successfully realised millimetre-range ordering of the atomic step of the sapphire substrate. We also obtained a sapphire atomic step with nanometre-scale uniformity in the terrace width and atomic-step height. Such sapphire substrates will find applications in the preparation of various semiconductors and devices.

Single-Crystal Sapphire Optical Fiber Sensor Instrumentation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pickrell, Gary; Scott, Brian; Wang, Anbo

2013-12-31

This report summarizes technical progress on the program “Single-Crystal Sapphire Optical Fiber Sensor Instrumentation,” funded by the National Energy Technology Laboratory of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. This project was completed in three phases, each with a separate focus. Phase I of the program, from October 1999 to April 2002, was devoted to development of sensing schema for use in high temperature, harsh environments. Different sensing designs were proposed and tested in the laboratory. Phase II of the program, frommore » April 2002 to April 2009, focused on bringing the sensor technologies, which had already been successfully demonstrated in the laboratory, to a level where the sensors could be deployed in harsh industrial environments and eventually become commercially viable through a series of field tests. Also, a new sensing scheme was developed and tested with numerous advantages over all previous ones in Phase II. Phase III of the program, September 2009 to December 2013, focused on development of the new sensing scheme for field testing in conjunction with materials engineering of the improved sensor packaging lifetimes. In Phase I, three different sensing principles were studied: sapphire air-gap extrinsic Fabry-Perot sensors; intensity-based polarimetric sensors; and broadband polarimetric sensors. Black body radiation tests and corrosion tests were also performed in this phase. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. At the beginning of Phase II, in June 2004, the BPDI sensor was tested at the Wabash River coal

Shear strength of metal-sapphire contacts

NASA Technical Reports Server (NTRS)

Pepper, S. V.

1976-01-01

The shear strength of polycrystalline Ag, Cu, Ni, and Fe contacts on clean (0001) sapphire has been studied in ultrahigh vacuum. Both clean metal surfaces and surfaces exposed to O2, Cl2, and C2H4 were used. The results indicate that there are two sources of strength of Al2O3-metal contacts: an intrinsic one that depends on the particular clean metal in contact with Al2O3 and an additional one due to intermediate films. The shear strength of the clean metal contacts correlated directly with the free energy of oxide formation for the lowest metal oxide, in accord with the hypothesis that a chemical bond is formed between metal cations and oxygen anions in the sapphire surface. Contacts formed by metals exposed to chlorine exhibited uniformly low shear strength indicative of van der Waals bonding between chlorinated metal surfaces and sapphire. Contacts formed by metals exposed to oxygen exhibited enhanced shear strength, in accord with the hypothesis that an intermediate oxide layer increases interfacial strength.

High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector.

PubMed

Guo, Hao; Zhang, Xiong; Chen, Hongjun; Zhang, Peiyuan; Liu, Honggang; Chang, Hudong; Zhao, Wei; Liao, Qinghua; Cui, Yiping

2013-09-09

GaN-based light-emitting diodes (LEDs) on patterned sapphire substrate (PSS) with patterned composite SiO(2)/Al(2)O(3) passivation layers and TiO(2)/Al(2)O(3) distributed Bragg reflector (DBR) backside reflector have been proposed and fabricated. Highly passivated Al(2)O(3) layer deposited on indium tin oxide (ITO) layer with excellent uniformity and quality has been achieved with atomic layer deposition (ALD) technology. With a 60 mA current injection, an enhancement of 21.6%, 59.7%, and 63.4% in the light output power (LOP) at 460 nm wavelength was realized for the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers, the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layers and Ag mirror + 3-pair TiO(2)/SiO(2) DBR backside reflector, and the LED with the patterned composite SiO(2)/Al(2)O(3) passivation layer and Ag mirror + 3-pair ALD-grown TiO(2)/Al(2)O(3) DBR backside reflector as compared with the conventional LED only with a single SiO(2) passivation layer, respectively.

Progress on 10 Kelvin cryo-cooled sapphire oscillator

NASA Technical Reports Server (NTRS)

Wang, Rabi T.; Dick, G. John; Diener, William A.

2004-01-01

We present recent progress on the 10 Kelvin Cryocooled Sapphire Oscillator (10K CSO). Included are incorporation of a new pulse tube cryocooler, cryocooler vibration comparisons between G-M and pulse-tube types, phase noise, and frequency stability tests. For the advantage of a single stage pulse tube cryocooler, we also present results for a 40K Compensated Sapphire Oscillator (40K CSO).

Optical and electrical properties of GaN-based light emitting diodes grown on micro- and nano-scale patterned Si substrate

NASA Astrophysics Data System (ADS)

Chiu, Ching-Hsueh; Lin, Chien-Chung; Deng, Dongmei; Kuo, Hao-Chung; Lau, Kei-May

2011-10-01

We investigate the optical and electrical characteristics of the GaN-based light emitting diodes (LEDs) grown on Micro and Nano-scale Patterned silicon substrate (MPLEDs and NPLEDs). The transmission electron microscopy (TEM) images reveal the suppression of threading dislocation density in InGaN/GaN structure on nano-pattern substrate due to nanoscale epitaxial lateral overgrowth (NELOG). The plan-view and cross-section cathodoluminescence (CL) mappings show less defective and more homogeneous active quantum well region growth on nano-porous substrates. From temperature dependent photoluminescence (PL) and low temperature time-resolved photoluminescence (TRPL) measurement, NPLEDs has better carrier confinement and higher radiative recombination rate than MPLEDs. In terms of device performance, NPLEDs exhibits smaller electroluminescence (EL) peak wavelength blue shift, lower reverse leakage current and decreases efficiency droop compared with the MPLEDs. These results suggest the feasibility of using NPSi for the growth of high quality and power LEDs on Si substrates.

Morphological transitions in nanoscale patterns produced by concurrent ion sputtering and impurity co-deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bradley, R. Mark

2016-04-07

We modify the theory of nanoscale patterns produced by ion bombardment with concurrent impurity deposition to take into account the effect that the near-surface impurities have on the collision cascades. As the impurity concentration is increased, the resulting theory successively yields a flat surface, a rippled surface with its wavevector along the projected direction of ion incidence, and a rippled surface with its wavevector rotated by 90°. Exactly the same morphological transitions were observed in recent experiments in which silicon was bombarded with an argon ion beam and gold was co-deposited [Moon et al., e-print arXiv:1601.02534].

Spatial inhomogeneities in Al x Ga1-x N quantum wells induced by the surface morphology of AlN/sapphire templates

NASA Astrophysics Data System (ADS)

Zeimer, Ute; Jeschke, Joerg; Mogilatenko, Anna; Knauer, Arne; Kueller, Viola; Hoffmann, Veit; Kuhn, Christian; Simoneit, Tino; Martens, Martin; Wernicke, Tim; Kneissl, Michael; Weyers, Markus

2015-11-01

The effects of the template on the optical and structural properties of Al0.75Ga0.25N/Al0.8Ga0.2N multiple quantum well (MQWs) laser active regions have been investigated. The laser structures for optical pumping were grown on planar c-plane AlN/sapphire as well as on thick epitaxially laterally overgrown (ELO) AlN layers on patterned AlN/sapphire. Two ELO AlN/sapphire templates were investigated, one with a miscut of the sapphire surface to the m-direction with an angle of 0.25°, the other with a miscut angle of 0.25° to the sapphire a-direction. The MQWs are studied by atomic force microscopy, plan-view cathodoluminescence (CL) at room temperature and 83 K as well as transmission electron microscopy using high-angle annular dark-field imaging and energy-dispersive x-ray spectroscopy. The results are compared to optical pumping measurements. It was found that the surface morphology of the templates determines the lateral wavelength distribution in the MQWs observed by spectral CL mappings. The lateral wavelength spread is largest for the laser structures grown on ELO AlN with miscut to sapphire a-direction caused by the local variation of the MQW thicknesses and the Ga incorporation at macrosteps on the ELO-AlN. A CL peak wavelength spread of up to 7 nm has been found. The MQWs grown on planar AlN/sapphire templates show a homogeneous wavelength distribution. However, due to the high threading dislocation density and the resulting strong nonradiative recombination, laser operation could not be achieved. The laser structures grown on ELO AlN/sapphire show optically pumped lasing with a record short wavelength of 237 nm.

Modal reduction in single crystal sapphire optical fiber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Yujie; Hill, Cary; Liu, Bo

2015-10-12

A new type of single crystal sapphire optical fiber (SCSF) design is proposed to reduce the number of guided modes via a highly dispersive cladding with a periodic array of high and low index regions in the azimuthal direction. The structure retains a “core” region of pure single crystal (SC) sapphire in the center of the fiber and a “cladding” region of alternating layers of air and SC sapphire in the azimuthal direction that is uniform in the radial direction. The modal characteristics and confinement losses of the fundamental mode were analyzed via the finite element method by varying themore » effective core diameter and the dimensions of the “windmill” shaped cladding. The simulation results showed that the number of guided modes were significantly reduced in the “windmill” fiber design, as the radial dimension of the air and SC sapphire cladding regions increase with corresponding decrease in the azimuthal dimension. It is anticipated that the “windmill” SCSF will readily improve the performance of current fiber optic sensors in the harsh environment and potentially enable those that were limited by the extremely large modal volume of unclad SCSF.« less

Analysis and modification of blue sapphires from Rwanda by ion beam techniques

NASA Astrophysics Data System (ADS)

Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.

2015-12-01

Blue sapphire is categorised in a corundum (Al2O3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV-Vis-NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.

Development of a sapphire fiber thermometer using two wavelength bands

NASA Astrophysics Data System (ADS)

Ye, Linhua; Shen, Yonghang

1996-09-01

This paper reports the development of a sapphire ((alpha) - Al2O3) single crystal optical fiber thermometer using two wavelength bands. A thin film of precious metal or ceramic deposited onto one end of the sapphire fiber forms a mini-radiation cavity. The other end of the sapphire fiber is coupled to a low-loss silica fiber. Radiation from the small cavity is transmitted along the silica fiber into a photodetection system which consists of a lens, beam splitter, two interference filters (820 nm and 940 nm center wavelength, 30 nm bandwidth) and two silicon photocells. The temperature measurement is based on the detection of radiation from the small cavity. The sapphire fiber (0.25 - 1.0 mm diameter, 100 - 450 mm length) was grown by the laser heated pedestal growth (LHPG) methods. Transmission loss in the sapphire fiber was experimentally measured. Theoretical analysis shows the apparent emittance of the small cavity with a length to diameter (L/D) ratio greater than eight is a constant value near to one, so the small cavity can be considered as a small black-body cavity. Using the developed sapphire fiber temperature sensor, we have built a sapphire fiber thermometer based on a 8098 single-chip microcomputer system. It was calibrated at some known stable temperature point and uses the fundamental radiation law to extrapolate to other temperatures. By taking the ratio of the optical power at two wavelengths, errors due to changes in the system, such as emissivity and transmission losses, can be canceled out. The thermometer has an operating temperature range of 800 to 1900 degrees Celsius, and an accuracy of 0.2% at 1000 degrees Celsius. There are a number of applications of the thermometer both in science and industry.

Nanoscale charge distribution and energy band modification in defect-patterned graphene.

PubMed

Wang, Shengnan; Wang, Rui; Wang, Xiaowei; Zhang, Dongdong; Qiu, Xiaohui

2012-04-21

Defects were introduced precisely to exfoliated graphene (G) sheets on a SiO(2)/n(+) Si substrate to modulate the local energy band structure and the electron pathway using solution-phase oxidation followed by thermal reduction. The resulting nanoscale charge distribution and band gap modification were investigated by electrostatic force microscopy and spectroscopy. A transition phase with coexisting submicron-sized metallic and insulating regions in the moderately oxidized monolayer graphene were visualized and measured directly. It was determined that the delocalization of electrons/holes in a graphene "island" is confined by the surrounding defective C-O matrix, which acts as an energy barrier for mobile charge carriers. In contrast to the irreversible structural variations caused by the oxidation process, the electrical properties of graphene can be restored by annealing. The defect-patterned graphene and graphene oxide heterojunctions were further characterized by electrical transport measurement.

Reliability improvement methods for sapphire fiber temperature sensors

NASA Astrophysics Data System (ADS)

Schietinger, C.; Adams, B.

1991-08-01

Mechanical, optical, electrical, and software design improvements can be brought to bear in the enhancement of fiber-optic sapphire-fiber temperature measurement tool reliability in harsh environments. The optical fiber thermometry (OFT) equipment discussed is used in numerous process industries and generally involves a sapphire sensor, an optical transmission cable, and a microprocessor-based signal analyzer. OFT technology incorporating sensors for corrosive environments, hybrid sensors, and two-wavelength measurements, are discussed.

Picosecond temporal contrast of Ti:Sapphire lasers (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kalashnikov, Mikhail P.; Khodakovskiy, Nikita

2017-05-01

The temporal shape of recompressed Ti:sapphire CPA pulses typically contains relatively long pre- and post- pedestals appearing on a picosecond time scale. Despite playing a key role in laser-matter interactions, these artifacts - especially the shape of the leading front of the recompressed pulses - are poorly investigated and understood. The related publications consider picosecond pedestals appearing at both fronts of the main pulse to be related to scattering of the stretched pulse off diffraction gratings inside the stretcher or due to clipping of the pulse spectrum at dielectric coatings. In our experiments we analyzed different types of stretcher-compressor combinations used in Ti:Sapphire laser systems. These include a prism-based stretcher and a bulk compressor, transmission and reflection diffraction gratings - based combinations. We identified pedestals that are typical for the particular stretcher-compressor combination. Especially investigated are those which are coherent with the major recompressed pulse, since with self-phase modulation in power amplifiers they will grow nonlinearly and finally appear symmetric around the major pulse, generating the pre-pedestal from the post-pedestal. Thus, a previously unreported influence of the trailing pedestal has been identified. It is commonly known that recompressed pulses from Ti:sapphire chirped-pulse amplifier systems are accompanied by a slowly decaying ragged post-pedestal. The detailed investigation shows that it consists of numerous pulses with temporal separation in the picosecond range. These are coherent with the main pulse. Moreover, the temporal structure of the trailing pedestal is independent of the particular realization of the Ti:sapphire system and it is present in radiation of any Ti:Sapphire CPA system including Kerr- mode locked master oscillators. Our investigations show that the coherent ragged post-pedestal is the post-radiation of inverted Ti:sapphire medium resulting from phonon

Method of Fabricating Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structure

NASA Technical Reports Server (NTRS)

Choi, Sang Hyouk (Inventor); Park, Yeonjoon (Inventor)

2017-01-01

One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

Chemical etching mechanism and properties of microstructures in sapphire modified by femtosecond laser

NASA Astrophysics Data System (ADS)

Liu, Manyu; Hu, Youwang; Sun, Xiaoyan; Wang, Cong; Zhou, Jianying; Dong, Xinran; Yin, Kai; Chu, Dongkai; Duan, Ji'an

2017-01-01

Sapphire, with extremely high hardness, high-temperature stability and wear resistance, often corroded in molten KOH at 300 °C after processing. The fabrication of microstructures on sapphire substrate performed by femtosecond laser irradiation combined with KOH solution chemical etching at room temperature is presented. It is found that this method reduces the harsh requirements of sapphire corrosion. After femtosecond irradiation, the sapphire has a high corrosion speed at room temperature. Through the analysis of Raman spectrum and XRD spectrum, a novel insight of femtosecond laser interaction with sapphire (α-Al2O3) is proposed. Results indicated that grooves on sapphire surface were formed by the lasers ablation removal, and the groove surface was modified in a certain depth. The modified area of the groove surface was changed from α-Al2O3 to γ-Al2O3. In addition, the impacts of three experimental parameters, laser power, scanning velocities and etching time, on the width and depth of microstructures are investigated, respectively. The modified area dimension is about 2 μm within limits power and speed. This work could fabricate high-quality arbitrary microstructures and enhance the performance of sapphire processing.

High-temperature effects on the light transmission through sapphire optical fiber

DOE PAGES

Wilson, Brandon A.; Petrie, Christian M.; Blue, Thomas E.

2018-03-13

Single crystal sapphire optical fiber was tested at high temperatures (1500°C) to determine its suitability for optical instrumentation in high-temperature environments. Broadband light transmission (450-2300 nm) through sapphire fiber was measured as a function of temperature as a test of the fiber's ability to survive and operate in high-temperature environments. Upon heating sapphire fiber to 1400°C, large amounts of light attenuation were measured across the entire range of light wavelengths that were tested. SEM and TEM images of the heated sapphire fiber indicated that a layer had formed at the surface of the fiber, most likely due to a chemicalmore » change at high temperatures. The microscopy results suggest that the surface layer may be in the form of aluminum hydroxide. Subsequent tests of sapphire fiber in an inert atmosphere showed minimal light attenuation at high temperatures along with the elimination of any surface layers on the fiber, indicating that the air atmosphere is indeed responsible for the increased attenuation and surface layer formation at high temperatures.« less

High-temperature effects on the light transmission through sapphire optical fiber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wilson, Brandon A.; Petrie, Christian M.; Blue, Thomas E.

Single crystal sapphire optical fiber was tested at high temperatures (1500°C) to determine its suitability for optical instrumentation in high-temperature environments. Broadband light transmission (450-2300 nm) through sapphire fiber was measured as a function of temperature as a test of the fiber's ability to survive and operate in high-temperature environments. Upon heating sapphire fiber to 1400°C, large amounts of light attenuation were measured across the entire range of light wavelengths that were tested. SEM and TEM images of the heated sapphire fiber indicated that a layer had formed at the surface of the fiber, most likely due to a chemicalmore » change at high temperatures. The microscopy results suggest that the surface layer may be in the form of aluminum hydroxide. Subsequent tests of sapphire fiber in an inert atmosphere showed minimal light attenuation at high temperatures along with the elimination of any surface layers on the fiber, indicating that the air atmosphere is indeed responsible for the increased attenuation and surface layer formation at high temperatures.« less

Energy output reduction and surface alteration of quartz and sapphire tips following Er:YAG laser contact irradiation for tooth enamel ablation.

PubMed

Eguro, Toru; Aoki, Akira; Maeda, Toru; Takasaki, Aristeo Atsushi; Hasegawa, Mitsuru; Ogawa, Masaaki; Suzuki, Takanori; Yonemoto, Kazuaki; Ishikawa, Isao; Izumi, Yuichi; Katsuumi, Ichiroh

2009-10-01

Despite the recent increase in application of Er:YAG laser for various dental treatments, limited information is available regarding the contact tips. This study examined the changes in energy output and surface condition of quartz and sapphire contact tips after Er:YAG laser contact irradiation for tooth enamel ablation. Ten sets of unused quartz or sapphire contact tips were employed for contact irradiation to sound enamel of extracted teeth. The teeth were irradiated with Er:YAG laser at approximately 75 J/cm(2)/pulse and 20 Hz under water spray for 60 minutes. The energy output was measured before and every 5 minutes after irradiation, and the changes in morphology and chemical composition of the contact surface were analyzed. The energy output significantly decreased with time in both tips. The energy output from the sapphire tips was generally higher on average than that of the quartz. The contact surfaces of all the used quartz tips were concave and irregular. Most of the sapphire tips also appeared rough with crater formation and fractures, except for a few tips in which a high energy output and the original smooth surface were maintained. Spots of melted tooth substances were seen attached to the surface of both tips. In contact enamel ablation, the sapphire tip appeared to be more resistant than the quartz tip. The quartz tips showed similar patterns of energy reduction and surface alteration, whereas the sapphire tips revealed a wider and more characteristic variation among tips. Lasers Surg. Med. 41:595-604, 2009. (c) 2009 Wiley-Liss, Inc.

Failure Analysis of Sapphire Refractive Secondary Concentrators

NASA Technical Reports Server (NTRS)

Salem, Jonathan A.; Quinn, George D.

2009-01-01

Failure analysis was performed on two sapphire, refractive secondary concentrators (RSC) that failed during elevated temperature testing. Both concentrators failed from machining/handling damage on the lens face. The first concentrator, which failed during testing to 1300 C, exhibited a large r-plane twin extending from the lens through much of the cone. The second concentrator, which was an attempt to reduce temperature gradients and failed during testing to 649 C, exhibited a few small twins on the lens face. The twins were not located at the origin, but represent another mode of failure that needs to be considered in the design of sapphire components. In order to estimate the fracture stress from fractographic evidence, branching constants were measured on sapphire strength specimens. The fractographic analysis indicated radial tensile stresses of 44 to 65 MPa on the lens faces near the origins. Finite element analysis indicated similar stresses for the first RSC, but lower stresses for the second RSC. Better machining and handling might have prevented the fractures, however, temperature gradients and resultant thermal stresses need to be reduced to prevent twinning.

Direct diode pumped Ti:sapphire ultrafast regenerative amplifier system

DOE PAGES

Backus, Sterling; Durfee, Charles; Lemons, Randy; ...

2017-02-10

Here, we report on a direct diode-pumped Ti:sapphire ultrafast regenerative amplifier laser system producing multi-uJ energies with repetition rate from 50 to 250 kHz. By combining cryogenic cooling of Ti:sapphire with high brightness fiber-coupled 450nm laser diodes, we for the first time demonstrate a power-scalable CW-pumped architecture that can be directly applied to demanding ultrafast applications such as coherent high-harmonic EUV generation without any complex post-amplification pulse compression. Initial results promise a new era for Ti:sapphire amplifiers not only for ultrafast laser applications, but also for tunable CW sources. We discuss the unique challenges to implementation, as well as themore » solutions to these challenges.« less

Direct diode pumped Ti:sapphire ultrafast regenerative amplifier system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Backus, Sterling; Durfee, Charles; Lemons, Randy

Here, we report on a direct diode-pumped Ti:sapphire ultrafast regenerative amplifier laser system producing multi-uJ energies with repetition rate from 50 to 250 kHz. By combining cryogenic cooling of Ti:sapphire with high brightness fiber-coupled 450nm laser diodes, we for the first time demonstrate a power-scalable CW-pumped architecture that can be directly applied to demanding ultrafast applications such as coherent high-harmonic EUV generation without any complex post-amplification pulse compression. Initial results promise a new era for Ti:sapphire amplifiers not only for ultrafast laser applications, but also for tunable CW sources. We discuss the unique challenges to implementation, as well as themore » solutions to these challenges.« less

Ti:sapphire - A theoretical assessment for its spectroscopy

NASA Astrophysics Data System (ADS)

Da Silva, A.; Boschetto, D.; Rax, J. M.; Chériaux, G.

2017-03-01

This article tries to theoretically compute the stimulated emission cross-sections when we know the oscillator strength of a broad material class (dielectric crystals hosting metal-transition impurity atoms). We apply the present approach to Ti:sapphire and check it by computing some emission cross-section curves for both π and σ polarizations. We also set a relationship between oscillator strength and radiative lifetime. Such an approach will allow future parametric studies for Ti:sapphire spectroscopic properties.

Optimizing Ti:Sapphire laser for quantitative biomedical imaging

NASA Astrophysics Data System (ADS)

James, Jeemol; Thomsen, Hanna; Hanstorp, Dag; Alemán Hérnandez, Felipe Ademir; Rothe, Sebastian; Enger, Jonas; Ericson, Marica B.

2018-02-01

Ti:Sapphire lasers are powerful tools in the field of scientific research and industry for a wide range of applications such as spectroscopic studies and microscopic imaging where tunable near-infrared light is required. To push the limits of the applicability of Ti:Sapphire lasers, fundamental understanding of the construction and operation is required. This paper presents two projects, (i) dealing with the building and characterization of custom built tunable narrow linewidth Ti:Sapphire laser for fundamental spectroscopy studies; and the second project (ii) the implementation of a fs-pulsed commercial Ti:Sapphire laser in an experimental multiphoton microscopy platform. For the narrow linewidth laser, a gold-plated diffraction grating with a Littrow geometry was implemented for highresolution wavelength selection. We demonstrate that the laser is tunable between 700 to 950 nm, operating in a pulsed mode with a repetition rate of 1 kHz and maximum average output power around 350 mW. The output linewidth was reduced from 6 GHz to 1.5 GHz by inserting an additional 6 mm thick etalon. The bandwidth was measured by means of a scanning Fabry Perot interferometer. Future work will focus on using a fs-pulsed commercial Ti:Sapphire laser (Tsunami, Spectra physics), operating at 80 MHz and maximum average output power around 1 W, for implementation in an experimental multiphoton microscopy set up dedicated for biomedical applications. Special focus will be on controlling pulse duration and dispersion in the optical components and biological tissue using pulse compression. Furthermore, time correlated analysis of the biological samples will be performed with the help of time correlated single photon counting module (SPCM, Becker&Hickl) which will give a novel dimension in quantitative biomedical imaging.

Ultrasensitive label-free detection of DNA hybridization by sapphire-based graphene field-effect transistor biosensor

NASA Astrophysics Data System (ADS)

Xu, Shicai; Jiang, Shouzhen; Zhang, Chao; Yue, Weiwei; Zou, Yan; Wang, Guiying; Liu, Huilan; Zhang, Xiumei; Li, Mingzhen; Zhu, Zhanshou; Wang, Jihua

2018-01-01

Graphene has attracted much attention in biosensing applications for its unique properties. Because of one-atom layer structure, every atom of graphene is exposed to the environment, making the electronic properties of graphene are very sensitive to charged analytes. Therefore, graphene is an ideal material for transistors in high-performance sensors. Chemical vapor deposition (CVD) method has been demonstrated the most successful method for fabricating large area graphene. However, the conventional CVD methods can only grow graphene on metallic substrate and the graphene has to be transferred to the insulating substrate for further device fabrication. The transfer process creates wrinkles, cracks, or tears on the graphene, which severely degrade electrical properties of graphene. These factors severely degrade the sensing performance of graphene. Here, we directly fabricated graphene on sapphire substrate by high temperature CVD without the use of metal catalysts. The sapphire-based graphene was patterned and make into a DNA biosensor in the configuration of field-effect transistor. The sensors show high performance and achieve the DNA detection sensitivity as low as 100 fM (10-13 M), which is at least 10 times lower than prior transferred CVD G-FET DNA sensors. The use of the sapphire-based G-FETs suggests a promising future for biosensing applications.

Single Mode Air-Clad Single Crystal Sapphire Optical Fiber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hill, Cary; Homa, Dan; Yu, Zhihao

The observation of single mode propagation in an air-clad single crystal sapphire optical fiber at wavelengths at and above 783 nm is presented for the first time. A high-temperature wet acid etching method was used to reduce the diameter of a 10 cm length of commercially-sourced sapphire fiber from 125 micrometers to 6.5 micrometers, and far-field imaging provided modal information at intervals as the fiber diameter decreased. Modal volume was shown to decrease with decreasing diameter, and single mode behavior was observed at the minimum diameter achieved. While weakly-guiding approximations are generally inaccurate for low modal volume optical fiber withmore » high core-cladding refractive index disparity, consistency between these approximations and experimental results was observed when the effective numerical aperture was measured and substituted for the theoretical numerical aperture in weakly-guiding approximation calculations. With the demonstration of very low modal volume in sapphire at fiber diameters much larger than anticipated by legacy calculations, the resolution of sapphire fiber distributed sensors may be increased and other sensing schemes requiring very low modal volume, such as fiber Bragg gratings, may be realized in extreme environment applications.« less

Single Mode Air-Clad Single Crystal Sapphire Optical Fiber

DOE PAGES

Hill, Cary; Homa, Dan; Yu, Zhihao; ...

2017-05-03

The observation of single mode propagation in an air-clad single crystal sapphire optical fiber at wavelengths at and above 783 nm is presented for the first time. A high-temperature wet acid etching method was used to reduce the diameter of a 10 cm length of commercially-sourced sapphire fiber from 125 micrometers to 6.5 micrometers, and far-field imaging provided modal information at intervals as the fiber diameter decreased. Modal volume was shown to decrease with decreasing diameter, and single mode behavior was observed at the minimum diameter achieved. While weakly-guiding approximations are generally inaccurate for low modal volume optical fiber withmore » high core-cladding refractive index disparity, consistency between these approximations and experimental results was observed when the effective numerical aperture was measured and substituted for the theoretical numerical aperture in weakly-guiding approximation calculations. With the demonstration of very low modal volume in sapphire at fiber diameters much larger than anticipated by legacy calculations, the resolution of sapphire fiber distributed sensors may be increased and other sensing schemes requiring very low modal volume, such as fiber Bragg gratings, may be realized in extreme environment applications.« less

Femtosecond laser-induced periodic surface structural formation on sapphire with nanolayered gold coating

NASA Astrophysics Data System (ADS)

Yin, Kai; Wang, Cong; Duan, Ji'an; Guo, Chunlei

2016-09-01

Sapphire has a potential as a new generation of electronics display. However, direct processing of sapphire surface by visible or near-IR laser light is challenging since sapphire is transparent to these wavelengths. In this study, we investigate the formation of femtosecond laser-induced periodic surface structures (LIPSSs) on sapphire coated with nanolayered gold film. We found a reduced threshold by about 25 % in generating uniform LIPSSs on sapphire due to the nanolayered gold film. Different thickness of nanolayered gold films are studied, and it is shown that the change in thickness does not significantly affect the threshold reduction. It is believed that the diffusion of hot electrons in the gold films increases interfacial carrier density and electron-phonon coupling that results in a reduced threshold and more uniform periodic surface structure generation.

Raman scattering in single-crystal sapphire at elevated temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thapa, Juddha; Liu, Bo; Woodruff, Steven D.

Sapphire is a widely used high-temperature material and this work presents thorough characterization of all the measurable Raman scattering modes in sapphire and their temperature dependencies. Here, Raman scattering in bulk sapphire rods is measured from room temperature to 1081 °C and is illustrated as a method of noncontact temperature measurement. A single-line argon ion laser at 488 nm was used to excite the sapphire rods inside a cylindrical furnace. All the anti-Stokes peaks (or lines) were observable through the entire temperature range of interest, while Stokes peaks were observable until they were obscured by background thermal emission. Temperature measurementsmore » were found to be most reliable for A 1g and E g modes using the peaks at ±418, ±379, +578, +645, and, +750 cm -1 (+ and – are designated for Stokes and anti-Stokes peaks respectively). The 418 cm -1 peak was found to be the most intense peak. The temperature dependence of peak position, peak width, and peak area of the ±418 and ±379 peaks is presented. For +578, +645 and +750, the temperature dependence of peak position is presented. The peaks’ spectral positions provide the most precise temperature information within the experimental temperature range. Finally, the resultant temperature calibration curves are given, which indicate that sapphire can be used in high-temperature Raman thermometry with an accuracy of about 1.38°C average standard deviation over the entire >1000°C temperature range.« less

Raman scattering in single-crystal sapphire at elevated temperatures

DOE PAGES

Thapa, Juddha; Liu, Bo; Woodruff, Steven D.; ...

2017-10-25

Sapphire is a widely used high-temperature material and this work presents thorough characterization of all the measurable Raman scattering modes in sapphire and their temperature dependencies. Here, Raman scattering in bulk sapphire rods is measured from room temperature to 1081 °C and is illustrated as a method of noncontact temperature measurement. A single-line argon ion laser at 488 nm was used to excite the sapphire rods inside a cylindrical furnace. All the anti-Stokes peaks (or lines) were observable through the entire temperature range of interest, while Stokes peaks were observable until they were obscured by background thermal emission. Temperature measurementsmore » were found to be most reliable for A 1g and E g modes using the peaks at ±418, ±379, +578, +645, and, +750 cm -1 (+ and – are designated for Stokes and anti-Stokes peaks respectively). The 418 cm -1 peak was found to be the most intense peak. The temperature dependence of peak position, peak width, and peak area of the ±418 and ±379 peaks is presented. For +578, +645 and +750, the temperature dependence of peak position is presented. The peaks’ spectral positions provide the most precise temperature information within the experimental temperature range. Finally, the resultant temperature calibration curves are given, which indicate that sapphire can be used in high-temperature Raman thermometry with an accuracy of about 1.38°C average standard deviation over the entire >1000°C temperature range.« less

Nanostructuring of sapphire using time-modulated nanosecond laser pulses

NASA Astrophysics Data System (ADS)

Lorenz, P.; Zagoranskiy, I.; Ehrhardt, M.; Bayer, L.; Zimmer, K.

2017-02-01

The nanostructuring of dielectric surfaces using laser radiation is still a challenge. The IPSM-LIFE (laser-induced front side etching using in-situ pre-structured metal layer) method allows the easy, large area and fast laser nanostructuring of dielectrics. At IPSM-LIFE a metal covered dielectric is irradiated where the structuring is assisted by a self-organized molten metal layer deformation process. The IPSM-LIFE can be divided into two steps: STEP 1: The irradiation of thin metal layers on dielectric surfaces results in a melting and nanostructuring process of the metal layer and partially of the dielectric surface. STEP 2: A subsequent high laser fluence treatment of the metal nanostructures result in a structuring of the dielectric surface. At this study a sapphire substrate Al2O3(1-102) was covered with a 10 nm thin molybdenum layer and irradiated by an infrared laser with an adjustable time-dependent pulse form with a time resolution of 1 ns (wavelength λ = 1064 nm, pulse duration Δtp = 1 - 600 ns, Gaussian beam profile). The laser treatment allows the fabrication of different surface structures into the sapphire surface due to a pattern transfer process. The resultant structures were investigated by scanning electron microscopy (SEM). The process was simulated and the simulation results were compared with experimental results.

High temperature sensing using higher-order-mode rejected sapphire-crystal fiber gratings

NASA Astrophysics Data System (ADS)

Zhan, Chun; Kim, Jae Hun; Lee, Jon; Yin, Stuart; Ruffin, Paul; Luo, Claire

2007-09-01

In this paper, we report the fabrication of higher-order-mode rejected fiber Bragg gratings (FBGs) in sapphire crystal fiber using infrared (IR) femtosecond laser illumination. The grating is tested in high temperature furnace up to 1600 degree Celsius. As sapphire fiber is only available as highly multimode fiber, a scheme to filter out higher order modes in favor for the fundamental mode is theoretically evaluated and experimentally demonstrated. The approach is to use an ultra thin sapphire crystal fiber (60 micron in diameter) to decrease the number of modes. The small diameter fiber also enables bending the fiber to certain radius which is carefully chosen to provide low loss for the fundamental mode LP01 and high loss for the other high-order modes. After bending, less-than-2-nm resonant peak bandwidth is achieved. The grating spectrum is improved, and higher resolution sensing measurement can be achieved. This mode filtering method is very easy to implement. Furthermore, the sapphire fiber is sealed with hi-purity alumina ceramic cement inside a flexible high temperature titanium tube, and the highly flexible titanium tube offers a robust packaging to sapphire fiber. Our high temperature sapphire grating sensor is very promising in extremely high temperature sensing application.

Review and perspective: Sapphire optical fiber cladding development for harsh environment sensing

NASA Astrophysics Data System (ADS)

Chen, Hui; Buric, Michael; Ohodnicki, Paul R.; Nakano, Jinichiro; Liu, Bo; Chorpening, Benjamin T.

2018-03-01

The potential to use single-crystal sapphire optical fiber as an alternative to silica optical fibers for sensing in high-temperature, high-pressure, and chemically aggressive harsh environments has been recognized for several decades. A key technological barrier to the widespread deployment of harsh environment sensors constructed with sapphire optical fibers has been the lack of an optical cladding that is durable under these conditions. However, researchers have not yet succeeded in incorporating a high-temperature cladding process into the typical fabrication process for single-crystal sapphire fibers, which generally involves seed-initiated fiber growth from the molten oxide state. While a number of advances in fabrication of a cladding after fiber-growth have been made over the last four decades, none have successfully transitioned to a commercial manufacturing process. This paper reviews the various strategies and techniques for fabricating an optically clad sapphire fiber which have been proposed and explored in published research. The limitations of current approaches and future prospects for sapphire fiber cladding are discussed, including fabrication methods and materials. The aim is to provide an understanding of the past research into optical cladding of sapphire fibers and to assess possible material systems for future research on this challenging problem for harsh environment sensors.

Effect of Ti:sapphire laser on shear bond strength of orthodontic brackets to ceramic surfaces.

PubMed

Erdur, Emire Aybuke; Basciftci, Faruk Ayhan

2015-08-01

With increasing demand for orthodontic treatments in adults, orthodontists continue to debate the optimal way to prepare ceramic surfaces for bonding. This study evaluated the effects of a Ti:sapphire laser on the shear bond strength (SBS) of orthodontic brackets bonded to two ceramic surfaces (feldspathic and IPS Empress e-Max) and the results were compared with those using two other lasers (Er:YAG and Nd:YAG) and 'conventional' techniques, i.e., sandblasting (50 µm) and hydrofluoric (HF) acid. In total, 150 ceramic discs were prepared and divided into two groups. In each group, the following five subgroups were prepared: Ti:sapphire laser, Nd:YAG laser, Er:YAG laser, sandblasting, and HF acid. Mandibular incisor brackets were bonded using a light-cured adhesive. The samples were stored in distilled water for 24 hours at 37°C and then thermocycled. Extra samples were prepared and examined using scanning electron microscopy (SEM). SBS testing was performed and failure modes were classified. ANOVA and Tukey's HSD tests were used to compare SBS among the five subgroups (P < 0.05). Feldspathic and IPS Empress e-Max ceramics had similar SBS values. The Ti:sapphire femtosecond laser (16.76 ± 1.37 MPa) produced the highest mean bond strength, followed by sandblasting (12.79 ± 1.42 MPa) and HF acid (11.28 ± 1.26 MPa). The Er:YAG (5.43 ± 1.21 MPa) and Nd:YAG laser (5.36 ± 1.04 MPa) groups were similar and had the lowest SBS values. More homogeneous and regular surfaces were observed in the ablation pattern with the Ti:sapphire laser than with the other treatments by SEM analysis. Within the limitations of this in vitro study, Ti:sapphire laser- treated surfaces had the highest SBS values. Therefore, this technique may be useful for the pretreatment of ceramic surfaces as an alternative to 'conventional' techniques. © 2015 Wiley Periodicals, Inc.

Titanium-doped sapphire laser research and design study

NASA Technical Reports Server (NTRS)

Moulton, Peter F.

1987-01-01

Three main topics were considered in this study: the fundamental laser parameters of titanium-doped sapphire, characterization of commercially grown material, and design of a tunable, narrow-linewidth laser. Fundamental parameters investigated included the gain cross section, upper-state lifetime as a function of temperature and the surface-damage threshold. Commercial material was found to vary widely in the level of absorption of the laser wavelength with the highest absorption in Czochralski-grown crystals. Several Yi:sapphire lasers were constructed, including a multimode laser with greater than 50mJ of output energy and a single-transverse-mode ring laser, whose spectral and temporal characteristics were completely characterized. A design for a narrow-linewidth (single-frequency) Ti:sapphire laser was developed, based on the results of the experimental work. The design involves the use of a single-frequency, quasi-cw master oscillator, employed as an injection source for a pulsed ring laser.

High T(sub c) Superconducting Bolometer on Chemically Etched 7 Micrometer Thick Sapphire

NASA Technical Reports Server (NTRS)

Lakew, B.; Brasunas, J. C.; Pique, A.; Fettig, R.; Mott, B.; Babu, S.; Cushman, G. M.

1997-01-01

A transition-edge IR detector, using a YBa2Cu3O(7-x) (YBCO) thin film deposited on a chemically etched, 7 micrometer thick sapphire substrate has been built. To our knowledge it is the first such high T(sub c) superconducting (HTS) bolometer on chemically thinned sapphire. The peak optical detectivity obtained is l.2 x 10(exp 10) cmHz(sup 1/2)/W near 4Hz. Result shows that it is possible to obtain high detectivity with thin films on etched sapphire with no processing after the deposition of the YBCO film. We discuss the etching process and its potential for micro-machining sapphire and fabricating 2-dimensional detector arrays with suspended sapphire membranes. A 30 micrometer thick layer of gold black provided IR absorption. Comparison is made with the current state of the art on silicon substrates.

Lithographically Patterned Nanoscale Electrodeposition of Plasmonic, Bimetallic, Semiconductor, Magnetic, and Polymer Nanoring Arrays

PubMed Central

2015-01-01

Large area arrays of magnetic, semiconducting, and insulating nanorings were created by coupling colloidal lithography with nanoscale electrodeposition. This versatile nanoscale fabrication process allows for the independent tuning of the spacing, diameter, and width of the nanorings with typical values of 1.0 μm, 750 nm, and 100 nm, respectively, and was used to form nanorings from a host of materials: Ni, Co, bimetallic Ni/Au, CdSe, and polydopamine. These nanoring arrays have potential applications in memory storage, optical materials, and biosensing. A modified version of this nanoscale electrodeposition process was also used to create arrays of split gold nanorings. The size of the split nanoring opening was controlled by the angle of photoresist exposure during the fabrication process and could be varied from 50% down to 10% of the ring circumference. The large area (cm2 scale) gold split nanoring array surfaces exhibited strong polarization-dependent plasmonic absorption bands for wavelengths from 1 to 5 μm. Plasmonic nanoscale split ring arrays are potentially useful as tunable dichroic materials throughout the infrared and near-infrared spectral regions. PMID:25553204

DPSSL pumped 20-TW Ti:sapphire laser system for DD fusion experiment

NASA Astrophysics Data System (ADS)

Sekine, T.; Hatano, Y.; Takeuchi, Y.; Kawashima, T.

2016-03-01

A diode-pumped solid-state laser (DPSSL) pumped 20-TW output Ti:sapphire laser system has been developed. A diode-pumped Nd:glass laser with output energy of 12.7 J in 527 nm was used as a pump source for a 20-TW Ti:sapphire amplifier. A CeLiB6O10 nonlinear optical crystal was used as a frequency doubler of the Nd:glass DPSSL[1]. Figure 1 shows typical output pulse energy of the 20-TW amplifier as a function of pumping energy and a near field pattern. A 1.65 J pulse energy was obtained by 4.5 J pump energy. The amplified seed pulse is compressed to typically 60 fs as shown in Fig. 1 by a vacuumed pulse compressor with 80% of transmissivity. Encircled energy ratio, into a circled with 8 μm diameter area, of far field pattern focused by off-axis parabolic mirror with F# of 3 is numerically evaluated to 40% at TW class output condition. Then focal intensity would reach to 1018W/cm2. This all- DPSSL system contributes for stable and continual investigation of laser induced plasma experiment. We have succeeded continual and high efficient generation of DD fusion neutron from CD nano-particles by cluster fusion scheme using the 20-TW laser. A yield of ∼105 neutrons per shot was stably observed during continuous 100 shots with repetition rate of 0.1Hz.

Molecular-orbital model for metal-sapphire interfacial strength

NASA Technical Reports Server (NTRS)

Johnson, K. H.; Pepper, S. V.

1982-01-01

Self-consistent-field X-Alpha scattered-wave cluster molecular-orbital models have been constructed for transition and noble metals (Fe, Ni, Cu, and Ag) in contact with a sapphire (Al2O3) surface. It is found that a chemical bond is established between the metal d-orbital electrons and the nonbonding 2p-orbital electrons of the oxygen anions on the Al2O3 surface. An increasing number of occupied metal-sapphire antibonding molecular orbitals explains qualitatively the observed decrease of contact shear strength through the series Fe, Ni, Cu, and Ag.

Strain Evolution of Annealed Hydrogen-Implanted (0001) Sapphire

NASA Astrophysics Data System (ADS)

Wong, Christine Megan

Exfoliation is a technique used to remove a thin, uniform layer of material from the bulk that involves the annealing of hydrogen ion-implanted materials in order to initiate defect nucleation and growth leading to guided crack propagation. This study presents an investigation into the annealing process required to initiate blistering (an essential precursor to exfoliation) in (0001) sapphire implanted at room temperature with hydrogen ions. Triple axis x-ray diffraction was used to characterize the evolution of the implanted layer for single crystal (0001) sapphire substrates implanted at room temperature at 360 keV with either a 5x1016 cm -2 or 8x1016 cm-2 dose of hydrogen ions. A simulation of the ion distribution in TRIM estimated that the projected range and thickness of the implanted layer for both doses was approximately 2.2 mum. Following implantation, the implanted sapphire was annealed using a two-step annealing procedure. The first step was performed at a lower temperature, ideally to nucleate and coarsen defects. Temperatures investigated ranged from 550 - 650 °C. The second step was performed at a higher temperature (800 °C) to induce further defect coarsening and surface blistering. After all annealing steps, triple axis o/2theta and o scans were taken to observe any changes in the diffraction profile - namely, any reduction in the amplitude and shift in the location of the fringes associated with strain in the crystal - which would correlate with defect growth and nucleation. It was found that significant strain fringe reduction first occurred after annealing at 650 °C for 8 hours for both doses; however, it was not clear whether or not this strain reduction was due primarily to hydrogen diffusion or to recovery of other defects induced during the ion implantation. The o/2theta curves were then fit using Bede RADS in order to quantify the strain within the crystal and confirm the reduction of the strained layer within the crystal. Finally

Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy.

PubMed

Li, Heng; Cheng, Hui-Yu; Chen, Wei-Liang; Huang, Yi-Hsin; Li, Chi-Kang; Chang, Chiao-Yun; Wu, Yuh-Renn; Lu, Tien-Chang; Chang, Yu-Ming

2017-03-30

We performed depth-resolved PL and Raman spectral mappings of a GaN-based LED structure grown on a patterned sapphire substrate (PSS). Our results showed that the Raman mapping in the PSS-GaN heterointerface and the PL mapping in the In x Ga 1-x N/GaN MQWs active layer are spatially correlated. Based on the 3D construction of E 2 (high) Raman peak intensity and frequency shift, V-shaped pits in the MQWs can be traced down to the dislocations originated in the cone tip area of PSS. Detail analysis of the PL peak distribution further revealed that the indium composition in the MQWs is related to the residual strain propagating from the PSS-GaN heterointerface toward the LED surface. Numerical simulation based on the indium composition distribution also led to a radiative recombination rate distribution that shows agreement with the experimental PL intensity distribution in the In x Ga 1-x N/GaN MQWs active layer.

Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy

PubMed Central

Li, Heng; Cheng, Hui-Yu; Chen, Wei-Liang; Huang, Yi-Hsin; Li, Chi-Kang; Chang, Chiao-Yun; Wu, Yuh-Renn; Lu, Tien-Chang; Chang, Yu-Ming

2017-01-01

We performed depth-resolved PL and Raman spectral mappings of a GaN-based LED structure grown on a patterned sapphire substrate (PSS). Our results showed that the Raman mapping in the PSS-GaN heterointerface and the PL mapping in the InxGa1−xN/GaN MQWs active layer are spatially correlated. Based on the 3D construction of E2(high) Raman peak intensity and frequency shift, V-shaped pits in the MQWs can be traced down to the dislocations originated in the cone tip area of PSS. Detail analysis of the PL peak distribution further revealed that the indium composition in the MQWs is related to the residual strain propagating from the PSS-GaN heterointerface toward the LED surface. Numerical simulation based on the indium composition distribution also led to a radiative recombination rate distribution that shows agreement with the experimental PL intensity distribution in the InxGa1−xN/GaN MQWs active layer. PMID:28358119

Nanoscale electrochemical patterning reveals the active sites for catechol oxidation at graphite surfaces.

PubMed

Patel, Anisha N; McKelvey, Kim; Unwin, Patrick R

2012-12-19

Graphite-based electrodes (graphite, graphene, and nanotubes) are used widely in electrochemistry, and there is a long-standing view that graphite step edges are needed to catalyze many reactions, with the basal surface considered to be inert. In the present work, this model was tested directly for the first time using scanning electrochemical cell microscopy reactive patterning and shown to be incorrect. For the electro-oxidation of dopamine as a model process, the reaction rate was measured at high spatial resolution across a surface of highly oriented pyrolytic graphite. Oxidation products left behind in a pattern defined by the scanned electrochemical cell served as surface-site markers, allowing the electrochemical activity to be correlated directly with the graphite structure on the nanoscale. This process produced tens of thousands of electrochemical measurements at different locations across the basal surface, unambiguously revealing it to be highly electrochemically active, with step edges providing no enhanced activity. This new model of graphite electrodes has significant implications for the design of carbon-based biosensors, and the results are additionally important for understanding electrochemical processes on related sp(2)-hybridized materials such as pristine graphene and nanotubes.

[The design of all solid-state tunable pulsed Ti:sapphire laser system].

PubMed

Chen, Zhe; Ku, Geng; Wan, Junchao; Wang, Wei; Zhou, Chuanqing

2013-05-01

This paper presented a design of broadly all solid-state tunable pulsed Ti:sapphire laser with high power and stable performance. The laser was pumped by custom-made Nd:YAG laser which had water cooling system and amplified by two stage amplifier. The method accomplished tunable output of all solid-state tunable pulsed Ti:sapphire laser by modifying the reflection angle of the back mirror. We investigated the relationship between the power of the pumping laser and the all solid-state tunable pulsed Ti: sapphire laser by changing the power of the pumping source.

Nanoscale Electrostructural Characterization of Compositionally Graded Al(x)Ga(1-x)N Heterostructures on GaN/Sapphire (0001) Substrate.

PubMed

Kuchuk, Andrian V; Lytvyn, Petro M; Li, Chen; Stanchu, Hryhorii V; Mazur, Yuriy I; Ware, Morgan E; Benamara, Mourad; Ratajczak, Renata; Dorogan, Vitaliy; Kladko, Vasyl P; Belyaev, Alexander E; Salamo, Gregory G

2015-10-21

We report on AlxGa1-xN heterostructures resulting from the coherent growth of a positive then a negative gradient of the Al concentration on a [0001]-oriented GaN substrate. These polarization-doped p-n junction structures were characterized at the nanoscale by a combination of averaging as well as depth-resolved experimental techniques including: cross-sectional transmission electron microscopy, high-resolution X-ray diffraction, Rutherford backscattering spectrometry, and scanning probe microscopy. We observed that a small miscut in the substrate orientation along with the accumulated strain during growth led to a change in the mosaic structure of the AlxGa1-xN film, resulting in the formation of macrosteps on the surface. Moreover, we found a lateral modulation of charge carriers on the surface which were directly correlated with these steps. Finally, using nanoscale probes of the charge density in cross sections of the samples, we have directly measured, semiquantitatively, both n- and p-type polarization doping resulting from the gradient concentration of the AlxGa1-xN layers.

Investigations of gain redshift in high peak power Ti:sapphire laser systems

NASA Astrophysics Data System (ADS)

Wu, Fenxiang; Yu, Linpeng; Zhang, Zongxin; Li, Wenkai; Yang, Xiaojun; Wu, Yuanfeng; Li, Shuai; Wang, Cheng; Liu, Yanqi; Lu, Xiaoming; Xu, Yi; Leng, Yuxin

2018-07-01

Gain redshift in high peak power Ti:sapphire laser systems can result in narrowband spectral output and hence lengthen the compressed pulse duration. In order to realize broadband spectral output in 10 PW-class Ti:sapphire lasers, the influence on gain redshift induced by spectral pre-shaping, gain distribution of cascaded amplifiers and Extraction During Pumping (EDP) technique have been investigated. The theoretical and experimental results show that the redshift of output spectrum is sensitive to the spectral pre-shaping and the gain distribution of cascaded amplifiers, while insensitive to the pumping scheme with or without EDP. Moreover, the output spectrum from our future 10 PW Ti:sapphire laser is theoretically analyzed based on the investigations above, which indicates that a Fourier-transform limited (FTL) pulse duration of 21 fs can be achieved just by optimizing the spectral pre-shaping and gain distribution in 10 PW-class Ti:sapphire lasers.

Fabrication of Monolithic Sapphire Membranes for High Tc Bolometer Array Development

NASA Technical Reports Server (NTRS)

Pugel, D. E.; Lakew, B.; Aslam, S.; Wang, L.

2003-01-01

This paper examines the effectiveness of Pt/Cr thin film masks for the architecture of monolithic membrane structures in r-plane sapphire. The development of a pinhole-free Pt/Cr composite mask that is resistant to hot H2SO4:H3PO4 etchant, will lead to the fabrication of smooth sapphire membranes whose surfaces are well-suited for the growth of low-noise high Tc films. In particular, the relationship of thermal annealing conditions on the Pt/Cr composite mask system to: (1) changes in the surface morphology and elemental concentration of the Pt/Cr thin film layers and (2) etch pit formation on the sapphire surface will be presented.

Nanoscale wicking methods and devices

NASA Technical Reports Server (NTRS)

Zhou, Jijie (Inventor); Bronikowski, Michael (Inventor); Noca, Flavio (Inventor); Sansom, Elijah B. (Inventor)

2011-01-01

A fluid transport method and fluid transport device are disclosed. Nanoscale fibers disposed in a patterned configuration allow transport of a fluid in absence of an external power source. The device may include two or more fluid transport components having different fluid transport efficiencies. The components may be separated by additional fluid transport components, to control fluid flow.

Thermal analysis of continuous and patterned multilayer films in the presence of a nanoscale hot spot

NASA Astrophysics Data System (ADS)

Juang, Jia-Yang; Zheng, Jinglin

2016-10-01

Thermal responses of multilayer films play essential roles in state-of-the-art electronic systems, such as photo/micro-electronic devices, data storage systems, and silicon-on-insulator transistors. In this paper, we focus on the thermal aspects of multilayer films in the presence of a nanoscale hot spot induced by near field laser heating. The problem is set up in the scenario of heat assisted magnetic recording (HAMR), the next-generation technology to overcome the data storage density limit imposed by superparamagnetism. We characterized thermal responses of both continuous and patterned multilayer media films using transient thermal modeling. We observed that material configurations, in particular, the thermal barriers at the material layer interfaces crucially impact the temperature field hence play a key role in determining the hot spot geometry, transient response and power consumption. With a representative generic media model, we further explored the possibility of optimizing thermal performances by designing layers of heat sink and thermal barrier. The modeling approach demonstrates an effective way to characterize thermal behaviors of micro and nano-scale electronic devices with multilayer thin film structures. The insights into the thermal transport scheme will be critical for design and operations of such electronic devices.

Growth and characterizations of various GaN nanostructures on C-plane sapphire using laser MBE

NASA Astrophysics Data System (ADS)

Ch., Ramesh; Tyagi, P.; Maurya, K. K.; Kumar, M. Senthil; Kushvaha, S. S.

2017-05-01

We have grown various GaN nanostructures such as three-dimensional islands, nanowalls and nanocolumns on c-plane sapphire substrates using laser assisted molecular beam epitaxy (LMBE) system. The shape of the GaN nanostructures was controlled by using different nucleation surfaces such as bare and nitridated sapphire with GaN or AlN buffer layers. The structural and surface morphological properties of grown GaN nanostructures were characterized by ex-situ high resolution x-ray diffraction, Raman spectroscopy and field emission scanning electron microscopy. The symmetric x-ray rocking curve along GaN (0002) plane shows that the GaN grown on pre-nitridated sapphire with GaN or AlN buffer layer possesses good crystalline quality compared to sapphire without nitridation. The Raman spectroscopy measurements revealed the wurtzite phase for all the GaN nanostructures grown on c-sapphire.

Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates

NASA Astrophysics Data System (ADS)

Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.

2015-04-01

Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.

Nanoscale topographic pattern formation on Kr{sup +}-bombarded germanium surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perkinson, Joy C.; Madi, Charbel S.; Aziz, Michael J.

2013-03-15

The nanoscale pattern formation of Ge surfaces uniformly irradiated by Kr{sup +} ions was studied in a low-contamination environment at ion energies of 250 and 500 eV and at angles of 0 Degree-Sign through 80 Degree-Sign . The authors present a phase diagram of domains of pattern formation occurring as these two control parameters are varied. The results are insensitive to ion energy over the range covered by the experiments. Flat surfaces are stable from normal incidence up to an incidence angle of {theta} = 55 Degree-Sign from normal. At higher angles, the surface is linearly unstable to the formationmore » of parallel-mode ripples, in which the wave vector is parallel to the projection of the ion beam on the surface. For {theta} {>=} 75 Degree-Sign the authors observe perpendicular-mode ripples, in which the wave vector is perpendicular to the ion beam. This behavior is qualitatively similar to those of Madi et al. for Ar{sup +}-irradiated Si but is inconsistent with those of Ziberi et al. for Kr{sup +}-irradiated Ge. The existence of a window of stability is qualitatively inconsistent with a theory based on sputter erosion [R. M. Bradley and J. M. Harper, J. Vac. Sci. Technol. A 6, 2390 (1988)] and qualitatively consistent with a model of ion impact-induced mass redistribution [G. Carter and V. Vishnyakov, Phys. Rev. B 54, 17647 (1996)] as well as a crater function theory incorporating both effects [S. A. Norris et al., Nat. Commun. 2, 276 (2011)]. The critical transition angle between stable and rippled surfaces occurs 10 Degree-Sign -15 Degree-Sign above the value of 45 Degree-Sign predicted by the mass redistribution model.« less

Sapphire Viewports for a Venus Probe

NASA Technical Reports Server (NTRS)

Bates, Stephen

2012-01-01

A document discusses the creation of a viewport suitable for use on the surface of Venus. These viewports are rated for 500 C and 100 atm pressure with appropriate safety factors and reliability required for incorporation into a Venus Lander. Sapphire windows should easily withstand the chemical, pressure, and temperatures of the Venus surface. Novel fixture designs and seals appropriate to the environment are incorporated, as are materials compatible with exploration vessels. A test cell was fabricated, tested, and leak rate measured. The window features polish specification of the sides and corners, soft metal padding of the sapphire, and a metal C-ring seal. The system safety factor is greater than 2, and standard mechanical design theory was used to size the window, flange, and attachment bolts using available material property data. Maintenance involves simple cleaning of the window aperture surfaces. The only weakness of the system is its moderate rather than low leak rate for vacuum applications.

[Evaluation of the Abbott Cell-Dyn Sapphire hematology analyzer].

PubMed

Park, Younhee; Song, Jaewoo; Song, Sungwook; Song, Kyung Soon; Ahn, Mee Suk; Yang, Mi-Sook; Kim, Il; Choi, Jong Rak

2007-06-01

The performance of Cell-Dyn Sapphire (Abbott Diagnostic, USA) was compared to the Bayer Advia 2120 (Bayer Diagnostics, USA), Sysmex XE-2100 (Sysmex Corporation, Japan), and reference microscopy. Three hundred samples for routine CBC and WBC differentials were randomly chosen for a comparison analysis. The Cell-Dyn Sapphire system was evaluated according to the linearity, imprecision, inter-instrument correlations, and white blood cell differential. The CBC parameters (WBC, RBC, hemoglobin and platelet) showed a significant linearity with correlation coefficients greater than 0.99 (P<0.0001). Coefficients of variation (CV) for within-run and differential count of WBC were less than 5% except for Total CV for monocytes, eosinophils, and basophils and within-run CV for low valued eosinophils. The correlation coefficients with manual count were lower in monocytes, eosinophils, and basophils than in neutrophils and lymphocytes. The correlation with other hematology anlayzers was significant exclusive of basophils. These results demonstrate that the Cell-Dyn Sapphire has a good linearity, an acceptable reproducibility, a minimal carryover, and a comparable performance with the sysmex XE-2100 and Advia 2120.

Efficient continuous-wave and passively Q-switched pulse laser operations in a diffusion-bonded sapphire/Er:Yb:YAl3(BO3)4/sapphire composite crystal around 1.55 μm.

PubMed

Chen, Yujin; Lin, Yanfu; Huang, Jianhua; Gong, Xinghong; Luo, Zundu; Huang, Yidong

2018-01-08

A composite crystal consisting of a 1.5-mm-thick Er:Yb:YAl 3 (BO 3 ) 4 crystal between two 1.2-mm-thick sapphire crystals was fabricated by the thermal diffusion bonding technique. Compared with a lone Er:Yb:YAl 3 (BO 3 ) 4 crystal measured under the identical experimental conditions, higher laser performances were demonstrated in the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal due to the reduction of the thermal effects. End-pumped by a 976 nm laser diode in a hemispherical cavity, a 1.55 μm continuous-wave laser with a maximum output power of 1.75 W and a slope efficiency of 36% was obtained in the composite crystal when the incident pump power was 6.54 W. Passively Q-switched by a Co 2+ :MgAl 2 O 4 crystal, a 1.52 μm pulse laser with energy of 10 μJ and repetition frequency of 105 kHz was also realized in the composite crystal. Pulse width was 315 ns. The results show that the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal is an excellent active element for 1.55 μm laser.

Progress Report for a New Cryogenic Sapphire Oscillator

NASA Technical Reports Server (NTRS)

Wang, Rabi T.; Dick, G. J.; Tjoelker, R. L.

2006-01-01

We present design progress and subsystem test results for a new short-term frequency standard, the Voltage Controlled Sapphire Oscillator (VCSO). Included are sapphire resonator and coupling design, cryocooler environmental sensitivity tests, Q measurement results, and turnover temperature results. A previous report presented history of the design related to resonator frequency and frequency compensation [1]. Performance goals are a frequency stability of 1x10(exp -14) (1 second less than or equal to (tau) less than or equal to 100 seconds) and two years or more continuous operation. Long-term operation and small size are facilitated by use of a small Stirling cryo-cooler (160W wall power) with an expected 5 year life.

Design of surface modifications for nanoscale sensor applications.

PubMed

Reimhult, Erik; Höök, Fredrik

2015-01-14

Nanoscale biosensors provide the possibility to miniaturize optic, acoustic and electric sensors to the dimensions of biomolecules. This enables approaching single-molecule detection and new sensing modalities that probe molecular conformation. Nanoscale sensors are predominantly surface-based and label-free to exploit inherent advantages of physical phenomena allowing high sensitivity without distortive labeling. There are three main criteria to be optimized in the design of surface-based and label-free biosensors: (i) the biomolecules of interest must bind with high affinity and selectively to the sensitive area; (ii) the biomolecules must be efficiently transported from the bulk solution to the sensor; and (iii) the transducer concept must be sufficiently sensitive to detect low coverage of captured biomolecules within reasonable time scales. The majority of literature on nanoscale biosensors deals with the third criterion while implicitly assuming that solutions developed for macroscale biosensors to the first two, equally important, criteria are applicable also to nanoscale sensors. We focus on providing an introduction to and perspectives on the advanced concepts for surface functionalization of biosensors with nanosized sensor elements that have been developed over the past decades (criterion (iii)). We review in detail how patterning of molecular films designed to control interactions of biomolecules with nanoscale biosensor surfaces creates new possibilities as well as new challenges.

Single crystal growth of submillimeter diameter sapphire tube by the micro-pulling down method

NASA Astrophysics Data System (ADS)

Kamada, Kei; Murakami, Rikito; Kochurikhin, Vladimir V.; Luidmila, Gushchina; Jin Kim, Kyoung; Shoji, Yasuhiro; Yamaji, Akihiro; Kurosawa, Shunsuke; Ohashi, Yuji; Yokota, Yuui; Yoshikawa, Akira

2018-06-01

This paper addresses several aspects of the μ-PD growth technology as applied to submillimeter diameter sapphire tubes for UFD application. The μ-PD method has been successfully adapted for single crystal sapphire tube growth. A compound crucible made possible the growth of single crystal sapphire tube as small as around 0.70-0.72 mm in outer diameter and 0.28-0.29 in inner diameter over 160 mm in length at growth rate of 2-4 mm/min along 〈0 0 1〉 direction. An Ir crucible with a die composed of an equivalent hole and Ir wire was heated by RF coil in N2 atmosphere. The μ-PD method has been successfully adapted for single crystal sapphire tube growth. Grown crystal tube showed good XRC value of 30.2 arcsec.

Bulk vertical micromachining of single-crystal sapphire using inductively coupled plasma etching for x-ray resonant cavities

NASA Astrophysics Data System (ADS)

Chen, P.-C.; Lin, P.-T.; Mikolas, D. G.; Tsai, Y.-W.; Wang, Y.-L.; Fu, C.-C.; Chang, S.-L.

2015-01-01

To provide coherent x-ray sources for probing the dynamic structures of solid or liquid biological substances on the picosecond timescale, a high-aspect-ratio x-ray resonator cavity etched from a single crystal substrate with a nearly vertical sidewall structure is required. Although high-aspect-ratio resonator cavities have been produced in silicon, they suffer from unwanted multiple beam effects. However, this problem can be avoided by using the reduced symmetry of single-crystal sapphire in which x-ray cavities may produce a highly monochromatic transmitted x-ray beam. In this study, we performed nominal 100 µm deep etching and vertical sidewall profiles in single crystal sapphire using inductively coupled plasma (ICP) etching. The large depth is required to intercept a useful fraction of a stopped-down x-ray beam, as well as for beam clearance. An electroplated Ni hard mask was patterned using KMPR 1050 photoresist and contact lithography. The quality and performance of the x-ray cavity depended upon the uniformity of the cavity gap and therefore verticality of the fabricated vertical sidewall. To our knowledge, this is the first report of such deep, vertical etching of single-crystal sapphire. A gas mixture of Cl2/BCl3/Ar was used to etch the sapphire with process variables including BCl3 flow ratio and bias power. By etching for 540 min under optimal conditions, we obtained an x-ray resonant cavity with a depth of 95 µm, width of ~30 µm, gap of ~115 µm and sidewall profile internal angle of 89.5°. The results show that the etching parameters affected the quality of the vertical sidewall, which is essential for good x-ray resonant cavities.

Quasi ?non-destructive? laser ablation-inductively coupled plasma-mass spectrometry fingerprinting of sapphires

NASA Astrophysics Data System (ADS)

Guillong, M.; Günther, D.

2001-07-01

A homogenized 193 nm excimer laser with a flat-top beam profile was used to study the capabilities of LA-ICP-MS for 'quasi' non-destructive fingerprinting and sourcing of sapphires from different locations. Sapphires contain 97-99% of Al 2O 3 (corundum), with the remainder composed of several trace elements, which can be used to distinguish the origin of these gemstones. The ablation behavior of sapphires, as well as the minimum quantity of sample removal that is required to determine these trace elements, was investigated. The optimum ablation conditions were a fluency of 6 J cm -2, a crater diameter of 120 μm, and a laser repetition rate of 10 Hz. The optimum time for the ablation was determined to be 2 s, equivalent to 20 laser pulses. The mean sample removal was 60 nm per pulse (approx. 3 ng per pulse). This allowed satisfactory trace element determination, and was found to cause the minimum amount of damage, while allowing for the fingerprinting of sapphires. More than 40 isotopes were measured using different spatial resolutions (20-120 μm) and eight elements were reproducibly detected in 25 sapphire samples from five different locations. The reproducibility of the trace element distribution is limited by the heterogeneity of the sample. The mean of five or more replicate analyses per sample was used. Calibration was carried out using NIST 612 glass reference material as external standard. The linear dynamic range of the ICP-MS (nine orders of magnitude) allowed the use of Al, the major element in sapphire, as an internal standard. The limits of detection for most of the light elements were in the μg g -1 range and were better for heavier elements (mass >85), being in the 0.1 μg g -1 range. The accuracy of the determinations was demonstrated by comparison with XRF analyses of the same set of samples. Using the quantitative analyses obtained using LA-ICP-MS, natural sapphires from five different origins were statistically classified using ternary plots and

Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure

NASA Astrophysics Data System (ADS)

Nakasu, Taizo; Sun, Wei-Che; Kobayashi, Masakazu; Asahi, Toshiaki

2017-04-01

ZnTe thin films on sapphire substrate with nanofaceted structure have been studied. The nanofaceted structure of the m-plane (10-10) sapphire was obtained by heating the substrate at above 1100°C in air, and the r-plane (10-12) and S-plane (1-101) were confirmed. ZnTe layers were prepared on the nanofaceted m-plane sapphire substrates by molecular beam epitaxy (MBE). The effect of the nanofaceted structure on the orientation of the thin films was examined based on x-ray diffraction (XRD) pole figures. Transmission electron microscopy (TEM) was also employed to characterize the interface structures. The ZnTe layer on the nanofaceted m-plane sapphire substrate exhibited (331)-plane orientation, compared with (211)-plane without the nanofaceted structure. After thermal treatment, the m-plane surface vanished and (211) layer could not be formed because of the lack of surface lattice matching. On the other hand, (331)-plane thin film was formed on the nanofaceted m-plane sapphire substrate, since the (111) ZnTe domains were oriented on the S-facet. The orientation of the ZnTe epilayer depended on the atomic ordering on the surface and the influence of the S-plane.

Formation of coffee-stain patterns at the nanoscale: The role of nanoparticle solubility and solvent evaporation rate.

PubMed

Zhang, Jianguo; Milzetti, Jasmin; Leroy, Frédéric; Müller-Plathe, Florian

2017-03-21

When droplets of nanoparticle suspension evaporate from surfaces, they leave behind a deposit of nanoparticles. The mechanism of evaporation-induced pattern formation in the deposit is studied by molecular dynamics simulations for sessile nanodroplets. The influence of the interaction between nanoparticles and liquid molecules and the influence of the evaporation rate on the final deposition pattern are addressed. When the nanoparticle-liquid interaction is weaker than the liquid-liquid interaction, an interaction-driven or evaporation-induced layer of nanoparticles appears at the liquid-vapor interface and eventually collapses onto the solid surface to form a uniform deposit independently of the evaporation rate. When the nanoparticle-liquid and liquid-liquid interactions are comparable, the nanoparticles are dispersed inside the droplet and evaporation takes place with the contact line pinned at a surface defect. In such a case, a pattern with an approximate ring-like shape is found with fast evaporation, while a more uniform distribution is observed with slower evaporation. When the liquid-nanoparticle interaction is stronger than the liquid-liquid interaction, evaporation always occurs with receding contact line. The final deposition pattern changes from volcano-like to pancake-like with decreasing evaporation rate. These findings might help to design nanoscale structures like nanopatterns or nanowires on surface through controlled solvent evaporation.

Formation of coffee-stain patterns at the nanoscale: The role of nanoparticle solubility and solvent evaporation rate

NASA Astrophysics Data System (ADS)

Zhang, Jianguo; Milzetti, Jasmin; Leroy, Frédéric; Müller-Plathe, Florian

2017-03-01

When droplets of nanoparticle suspension evaporate from surfaces, they leave behind a deposit of nanoparticles. The mechanism of evaporation-induced pattern formation in the deposit is studied by molecular dynamics simulations for sessile nanodroplets. The influence of the interaction between nanoparticles and liquid molecules and the influence of the evaporation rate on the final deposition pattern are addressed. When the nanoparticle-liquid interaction is weaker than the liquid-liquid interaction, an interaction-driven or evaporation-induced layer of nanoparticles appears at the liquid-vapor interface and eventually collapses onto the solid surface to form a uniform deposit independently of the evaporation rate. When the nanoparticle-liquid and liquid-liquid interactions are comparable, the nanoparticles are dispersed inside the droplet and evaporation takes place with the contact line pinned at a surface defect. In such a case, a pattern with an approximate ring-like shape is found with fast evaporation, while a more uniform distribution is observed with slower evaporation. When the liquid-nanoparticle interaction is stronger than the liquid-liquid interaction, evaporation always occurs with receding contact line. The final deposition pattern changes from volcano-like to pancake-like with decreasing evaporation rate. These findings might help to design nanoscale structures like nanopatterns or nanowires on surface through controlled solvent evaporation.

Fabrication of meso- and nano-scale structures on surfaces of chalcogenide semiconductors by surface hydrodynamic interference patterning

NASA Astrophysics Data System (ADS)

Bilanych, V.; Komanicky, V.; Lacková, M.; Feher, A.; Kuzma, V.; Rizak, V.

2015-10-01

We observe the change of surface relief on amorphous Ge-As-Se thin films after irradiation with an electron beam. The beam softens the glass and induces various topological surface changes in the irradiated area. The film relief change depends on the film thickness, deposited charge, and film composition. Various structures are formed: Gausian-like cones, extremely sharp Taylor cones, deep craters, and craters with large spires grown on the side. Our investigation shows that these effects can be at least partially a result of electro-hydrodynamic material flow, but the observed phenomena are likely more complex. When we irradiated structural patterns formed by the electron beam with a red laser beam, we could not only fully relax the produced patterns, but also form very complex and intricate superstructures. These organized meso- and nano-scale structures are formed by a combination of photo-induced structural relaxation, light interference on structures fabricated by the e-beam, and photo-induced material flow.

Low Temperature Rhombohedral Single Crystal SiGe Epitaxy on c-plane Sapphire

NASA Technical Reports Server (NTRS)

Duzik, Adam J.; Choi, Sang H.

2016-01-01

Current best practice in epitaxial growth of rhombohedral SiGe onto (0001) sapphire (Al2O3) substrate surfaces requires extreme conditions to grow a single crystal SiGe film. Previous models described the sapphire surface reconstruction as the overriding factor in rhombohedral epitaxy, requiring a high temperature Al-terminated surface for high quality films. Temperatures in the 850-1100 C range were thought to be necessary to get SiGe to form coherent atomic matching between the (111) SiGe plane and the (0001) sapphire surface. Such fabrication conditions are difficult and uneconomical, hindering widespread application. This work proposes an alternative model that considers the bulk sapphire structure and determines how the SiGe film nucleates and grows. Accounting for thermal expansion effects, calculations using this new model show that both pure Ge and SiGe can form single crystal films in the 450-550 C temperature range. Experimental results confirm these predictions, where x-ray diffraction and atomic force microscopy show the films fabricated at low temperature rival the high temperature films in crystallographic and surface quality. Finally, an explanation is provided for why films of comparable high quality can be produced in either temperature range.

Compact fixed wavelength femtosecond oscillators as an add-on for tunable Ti:sapphire lasers extend the range of applications towards multimodal imaging and optogenetics

NASA Astrophysics Data System (ADS)

Hakulinen, T.; Klein, J.

2016-03-01

Two-photon (2P) microscopy based on tunable Ti:sapphire lasers has become a widespread tool for 3D imaging with sub-cellular resolution in living tissues. In recent years multi-photon microscopy with simpler fixed-wavelength femtosecond oscillators using Yb-doped tungstenates as gain material has raised increasing interest in life-sciences, because these lasers offer one order of magnitude more average power than Ti:sapphire lasers in the wavelength range around 1040 nm: Two-photon (2P) excitation of mainly red or yellow fluorescent dyes and proteins (e.g. YFP, mFruit series) simultaneously has been proven with a single IR laser wavelength. A new approach is to extend the usability of existing tunable Titanium sapphire lasers by adding a fixed IR wavelength with an Yb femtosecond oscillator. By that means a multitude of applications for multimodal imaging and optogenetics can be supported. Furthermore fs Yb-lasers are available with a repetition rate of typically 10 MHz and an average power of typically 5 W resulting in pulse energy of typically 500 nJ, which is comparably high for fs-oscillators. This makes them an ideal tool for two-photon spinning disk laser scanning microscopy and holographic patterning for simultaneous photoactivation of large cell populations. With this work we demonstrate that economical, small-footprint Yb fixed-wavelength lasers can present an interesting add-on to tunable lasers that are commonly used in multiphoton microscopy. The Yb fs-lasers hereby offer higher power for imaging of red fluorescent dyes and proteins, are ideally enhancing existing Ti:sapphire lasers with more power in the IR, and are supporting pulse energy and power hungry applications such as spinning disk microscopy and holographic patterning.

Development of the vertical Bridgman technique for 6-inch diameter c-axis sapphire growth supported by numerical simulation

NASA Astrophysics Data System (ADS)

Miyagawa, Chihiro; Kobayashi, Takumi; Taishi, Toshinori; Hoshikawa, Keigo

2014-09-01

Based on the growth of 3-inch diameter c-axis sapphire using the vertical Bridgman (VB) technique, numerical simulations were made and used to guide the growth of a 6-inch diameter sapphire. A 2D model of the VB hot-zone was constructed, the seeding interface shape of the 3-inch diameter sapphire as revealed by green laser scattering was estimated numerically, and the temperature distributions of two VB hot-zone models designed for 6-inch diameter sapphire growth were numerically simulated to achieve the optimal growth of large crystals. The hot-zone model with one heater was selected and prepared, and 6-inch diameter c-axis sapphire boules were actually grown, as predicted by the numerical results.

Design of Surface Modifications for Nanoscale Sensor Applications

PubMed Central

Reimhult, Erik; Höök, Fredrik

2015-01-01

Nanoscale biosensors provide the possibility to miniaturize optic, acoustic and electric sensors to the dimensions of biomolecules. This enables approaching single-molecule detection and new sensing modalities that probe molecular conformation. Nanoscale sensors are predominantly surface-based and label-free to exploit inherent advantages of physical phenomena allowing high sensitivity without distortive labeling. There are three main criteria to be optimized in the design of surface-based and label-free biosensors: (i) the biomolecules of interest must bind with high affinity and selectively to the sensitive area; (ii) the biomolecules must be efficiently transported from the bulk solution to the sensor; and (iii) the transducer concept must be sufficiently sensitive to detect low coverage of captured biomolecules within reasonable time scales. The majority of literature on nanoscale biosensors deals with the third criterion while implicitly assuming that solutions developed for macroscale biosensors to the first two, equally important, criteria are applicable also to nanoscale sensors. We focus on providing an introduction to and perspectives on the advanced concepts for surface functionalization of biosensors with nanosized sensor elements that have been developed over the past decades (criterion (iii)). We review in detail how patterning of molecular films designed to control interactions of biomolecules with nanoscale biosensor surfaces creates new possibilities as well as new challenges. PMID:25594599

Fabrication of Monolithic Sapphire Membranes for High T(sub c) Bolometer Array Development

NASA Technical Reports Server (NTRS)

Pugel, D. E.; Lakew, B.; Aslam, S.; Wang, L.

2004-01-01

This paper examines the effectiveness of Pt/Cr thin film masks for the architecture of monolithic membrane structures in r-plane single crystal sapphire. The development of a pinhole-free Pt/Cr composite mask that is resistant to boiling H2SO4:H3PO4 etchant will lead to the fabrication of smooth sapphire membranes whose surfaces are well-suited for the growth of low-noise high Tc films. In particular, the relationship of thermal annealing conditions on the Pt/Cr composite mask system to: (1) changes in the surface morphology (2) elemental concentration of the Pt/Cr thin film layers and (3) etch pit formation on the sapphire surface will be presented.

Strategies for Controlled Placement of Nanoscale Building Blocks

PubMed Central

2007-01-01

The capability of placing individual nanoscale building blocks on exact substrate locations in a controlled manner is one of the key requirements to realize future electronic, optical, and magnetic devices and sensors that are composed of such blocks. This article reviews some important advances in the strategies for controlled placement of nanoscale building blocks. In particular, we will overview template assisted placement that utilizes physical, molecular, or electrostatic templates, DNA-programmed assembly, placement using dielectrophoresis, approaches for non-close-packed assembly of spherical particles, and recent development of focused placement schemes including electrostatic funneling, focused placement via molecular gradient patterns, electrodynamic focusing of charged aerosols, and others. PMID:21794185

Sapphire Whispering Gallery Thermometer

NASA Astrophysics Data System (ADS)

Strouse, G. F.

2007-12-01

An innovative sapphire whispering gallery thermometer (SWGT) is being explored at the National Institute of Standards and Technology (NIST) as a potential replacement for a standard platinum resistance thermometer (SPRT) for industrial applications that require measurement uncertainties of ≤ 10 mK. The NIST SWGT uses a synthetic sapphire monocrystalline disk configured as a uniaxial, dielectric resonator with whispering gallery modes between 14 GHz and 20 GHz and with Q-factors as large as 90,000. The prototype SWGT stability at the ice melting point (0°C) is ≤ 1 mK with a frequency resolution equivalent to 0.05 mK. The prototype SWGT measurement uncertainty ( k= 1) is 10 mK from 0°C to 100°C for all five resonance modes studied. These results for the SWGT approach the capabilities of industrial resistance thermometers. The SWGT promises greatly increased resistance to mechanical shock relative to SPRTs, over the range from -196°C to 500°C while retaining the low uncertainties needed by secondary calibration laboratories. The temperature sensitivity of the SWGT depends upon a well-defined property (the refractive index at microwave frequencies) and the thermal expansion of a pure material. Therefore, it is expected that SWGTs can be calibrated over a wide temperature range using a reference function, along with deviations measured at a few fixed points. This article reports the prototype SWGT stability, resolution, repeatability, and the temperature dependence of five whispering gallery resonance frequencies in the range from 0°C to 100°C.

Dynamic Control of the Vortex Pinning Potential in a Superconductor Using Current Injection through Nanoscale Patterns.

PubMed

Kalcheim, Yoav; Katzir, Eran; Zeides, Felix; Katz, Nadav; Paltiel, Yossi; Millo, Oded

2017-05-10

Control over the vortex potential at the nanoscale in a superconductor is a subject of great interest for both fundamental and technological reasons. Many methods for achieving artificial pinning centers have been demonstrated, for example, with magnetic nanostructures or engineered imperfections, yielding many intriguing effects. However, these pinning mechanisms do not offer dynamic control over the strength of the patterned vortex potential because they involve static nanostructures created in or near the superconductor. Dynamic control has been achieved with scanning probe methods on the single vortex level but these are difficult so scale up. Here, we show that by applying controllable nanopatterned current injection, the superconductor can be locally driven out of equilibrium, creating an artificial vortex potential that can be tuned by the magnitude of the injected current, yielding a unique vortex channeling effect.

A general lithography-free method of microscale/nanoscale fabrication and patterning on Si and Ge surfaces

PubMed Central

2012-01-01

Here, we introduce and give an overview of a general lithography-free method to fabricate silicide and germanide micro-/nanostructures on Si and Ge surfaces through metal-vapor-initiated endoepitaxial growth. Excellent controls on shape and orientation are achieved by adjusting the substrate orientation and growth parameters. Furthermore, micro-/nanoscale pits with controlled morphologies can also be successfully fabricated on Si and Ge surfaces by taking advantage of the sublimation of silicides/germanides. The aim of this brief report is to illustrate the concept of lithography-free synthesis and patterning on surfaces of elemental semiconductors, and the differences and the challenges associated with the Si and the Ge surfaces will be discussed. Our results suggest that this low-cost bottom-up approach is promising for applications in functional nanodevices. PMID:22315969

Nanoscale functionalization and characterization of surfaces with hydrogel patterns and biomolecules

NASA Astrophysics Data System (ADS)

Dinakar, Hariharasudhan Chirra

The advent of numerous tools, ease of techniques, and concepts related to nanotechnology, in combination with functionalization via simple chemistry has made gold important for various biomedical applications. In this dissertation, the development and characterization of planar gold surfaces with responsive hydrogel patterns for rapid point of care sensing and the functionalization of gold nanoparticles for drug delivery are highlighted. Biomedical micro- and nanoscale devices that are spatially functionalized with intelligent hydrogels are typically fabricated using conventional UV-lithography. Herein, precise 3-D hydrogel patterns made up of temperature responsive crosslinked poly(N-isopropylacrylamide) over gold were synthesized. The XY control of the hydrogel was achieved using microcontact printing, while thickness control was achieved using atom transfer radical polymerization (ATRP). Atomic force microscopy analysis showed that to the ATRP reaction time governed the pattern growth. The temperature dependent swelling ratio was tailored by tuning the mesh size of the hydrogel. While nanopatterns exhibited a broad lower critical solution temperature (LCST) transition, surface roughness showed a sharp LCST transition. Quartz crystal microbalance with dissipation showed rapid response behavior of the thin films, which makes them applicable as functional components in biomedical devices. The easy synthesis, relative biocompatibility, inertness, and easy functionalization of gold nanoparticles (GNPs) have made them useful for various biomedical applications. Although ATRP can be successfully carried out over GNPs, the yield of stable solution based GNPs for biomedical applications prove to be low. As an alternative approach, a novel method of ISOlating, FUnctionalizing, and REleasing nanoparticles (ISOFURE) was proposed. Biodegradable poly(beta-amino ester) hydrogels were used to synthesize ISOFURE-GNP composites. ATRP was performed inside the composite, and the

Strong geometrical effects in submillimeter selective area growth and light extraction of GaN light emitting diodes on sapphire

DOE PAGES

Tanaka, Atsunori; Chen, Renjie; Jungjohann, Katherine L.; ...

2015-11-27

Advanced semiconductor devices often utilize structural and geometrical effects to tailor their characteristics and improve their performance. Our detailed understanding of such geometrical effects in the epitaxial selective area growth of GaN on sapphire substrates is reported here, and we utilize them to enhance light extraction from GaN light emitting diodes. Systematic size and spacing effects were performed side-by-side on a single 2” sapphire substrate to minimize experimental sampling errors for a set of 144 pattern arrays with circular mask opening windows in SiO 2. We show that the mask opening diameter leads to as much as 4 times increasemore » in the thickness of the grown layers for 20 μm spacings and that spacing effects can lead to as much as 3 times increase in thickness for a 350 μm dot diameter. We also observed that the facet evolution in comparison with extracted Ga adatom diffusion lengths directly influences the vertical and lateral overgrowth rates and can be controlled with pattern geometry. Lastly, such control over the facet development led to 2.5 times stronger electroluminescence characteristics from well-faceted GaN/InGaN multiple quantum well LEDs compared to non-faceted structures.« less

Properties Data for Adhesion and Surface Chemistry of Aluminum: Sapphire-Aluminum, Single-Crystal Couple

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Pohlchuck, Bobby; Whitle, Neville C.; Hector, Louis G., Jr.; Adams, Jim

1998-01-01

An investigation was conducted to examine the adhesion and surface chemistry of single-crystal aluminum in contact with single-crystal sapphire (alumina). Pull-off force (adhesion) measurements were conducted under loads of 0. I to I mN in a vacuum of 10(exp -1) to 10(exp -9) Pa (approx. 10(exp -10) to 10(exp -11) torr) at room temperature. An Auger electron spectroscopy analyzer incorporated directly into an adhesion-measuring vacuum system was primarily used to define the chemical nature of the surfaces before and after adhesion measurements. The surfaces were cleaned by argon ion sputtering. With a clean aluminum-clean -sapphire couple the mean value and standard deviation of pull-off forces required to separate the surfaces were 3015 and 298 micro-N, respectively. With a contaminated aluminum-clean sapphire couple these values were 231 and 241 micro-N. The presence of a contaminant film on the aluminum surface reduced adhesion by a factor of 13. Therefore, surfaces cleanliness, particularly aluminum cleanliness, played an important role in the adhesion of the aluminum-sapphire couples. Pressures on the order of 10(exp -8) to 10(exp -9) Pa (approx. 10(exp -10) to 10(exp -11) torr) maintained a clean aluminum surface for only a short time (less then 1 hr) but maintained a clean sapphire surface, once it was achieved, for a much longer time.

Characterization of the Performance of Sapphire Optical Fiber in Intense Radiation Fields, when Subjected to Very High Temperatures

NASA Astrophysics Data System (ADS)

Petrie, Christian M.

The U.S. Department of Energy is interested in extending optically-based instrumentation from non-extreme environments to extremely high temperature radiation environments for the purposes of developing in-pile instrumentation. The development of in-pile instrumentation would help support the ultimate goal of understanding the behavior and predicting the performance of nuclear fuel systems at a microstructural level. Single crystal sapphire optical fibers are a promising candidate for in-pile instrumentation due to the high melting temperature and radiation hardness of sapphire. In order to extend sapphire fiber-based optical instrumentation to high temperature radiation environments, the ability of sapphire fibers to adequately transmit light in such an environment must first be demonstrated. Broadband optical transmission measurements of sapphire optical fibers were made in-situ as the sapphire fibers were heated and/or irradiated. The damage processes in sapphire fibers were also modeled from the primary knock-on event from energetic neutrons to the resulting damage cascade in order to predict the formation of stable defects that ultimately determine the resulting change in optical properties. Sapphire optical fibers were shown to withstand temperatures as high as 1300 °C with minimal increases in optical attenuation. A broad absorption band was observed to grow over time without reaching a dynamic equilibrium when the sapphire fiber was heated at temperatures of 1400 °C and above. The growth of this absorption band limits the use of sapphire optical fibers, at least in air, to temperatures of 1300 °C and below. Irradiation of sapphire fibers with gamma rays caused saturation of a defect center located below 500 nm, and extending as far as ~1000 nm, with little effect on the transmission at 1300 and 1550 nm. Increasing temperature during gamma irradiation generally reduced the added attenuation. Reactor irradiation of sapphire fibers caused an initial rapid

Comparative study of GaN-based ultraviolet LEDs grown on different-sized patterned sapphire substrates with sputtered AlN nucleation layer

NASA Astrophysics Data System (ADS)

Zhou, Shengjun; Hu, Hongpo; Liu, Xingtong; Liu, Mengling; Ding, Xinghuo; Gui, Chengqun; Liu, Sheng; Guo, L. Jay

2017-11-01

GaN-based ultraviolet-light-emitting diodes (UV LEDs) with 375 nm emission were grown on different-sized patterned sapphire substrates (PSSs) with ex situ 15-nm-thick sputtered AlN nucleation layers by metal-organic chemical vapor deposition (MOCVD). It was observed through in situ optical reflectance monitoring that the transition time from a three-dimensional (3D) island to a two-dimensional (2D) coalescence was prolonged when GaN was grown on a larger PSS, owing to a much longer lateral growth time of GaN. The full widths at half-maximum (FWHMs) of symmetric GaN(002) and asymmetric GaN(102) X-ray diffraction (XRD) rocking curves decreased as the PSS size increased. By cross-sectional transmission electron microscopy (TEM) analysis, it was found that the threading dislocation (TD) density in UV LEDs decreased with increasing pattern size and fill factor of the PSS, thereby resulting in a marked improvement in internal quantum efficiency (IQE). Finite-difference time-domain (FDTD) simulations quantitatively demonstrated a progressive decrease in light extraction efficiency (LEE) as the PSS size increased. However, owing to the significantly reduced TD density in InGaN/AlInGaN multiple quantum wells (MQWs) and thus improved IQE, the light output power of the UV LED grown on a large PSS with a fill factor of 0.71 was 131.8% higher than that of the UV LED grown on a small PSS with a fill factor of 0.4, albeit the UV LED grown on a large PSS exhibited a much lower LEE.

Electron Beam "Writes" Silicon On Sapphire

NASA Technical Reports Server (NTRS)

Heinemann, Klaus

1988-01-01

Method of growing silicon on sapphire substrate uses beam of electrons to aid growth of semiconductor material. Silicon forms as epitaxial film in precisely localized areas in micron-wide lines. Promising fabrication method for fast, densely-packed integrated circuits. Silicon deposited preferentially in contaminated substrate zones and in clean zone irradiated by electron beam. Electron beam, like surface contamination, appears to stimulate decomposition of silane atmosphere.

Laser processing of sapphire with picosecond and sub-picosecond pulses

NASA Astrophysics Data System (ADS)

Ashkenasi, D.; Rosenfeld, A.; Varel, H.; Wähmer, M.; Campbell, E. E. B.

1997-11-01

Laser processing of sapphire using a Ti:sapphire laser at 790 and 395 nm and pulse widths varying between 0.2 and 5 ps is reported. A clear improvement in quality is demonstrated for multi-shot processing with sub-ps laser pulses. For fluences between 3 and 12 J/cm 2 two ablation phases were observed, in agreement with previous work from Tam et al. using 30 ps, 266 nm laser pulses [A.C. Tam, J.L. Brand, D.C. Cheng, W. Zapka, Appl. Phys. Lett. 55 (20) (1994) 2045]. During the `gentle ablation' phase periodic wavelike structures, i.e. ripples, were observed on the Al 2O 3 surface, perpendicular to the laser polarisation and with a spacing almost equalling the laser wavelength, indicating metallic-like behaviour. The ripple modulation depth was in the order of a few tens of nm. For fluences between 1 and 2.5 J/cm 2, below the single-shot surface damage threshold and at a pulse width above 200 fs, microstructures could be produced at the rear side of a 1 mm thick sapphire substrate without affecting the front surface.

Structural, Electrical and Optical Properties of Sputtered-Grown InN Films on ZnO Buffered Silicon, Bulk GaN, Quartz and Sapphire Substrates

NASA Astrophysics Data System (ADS)

Bashir, Umar; Hassan, Zainuriah; Ahmed, Naser M.; Afzal, Naveed

2018-05-01

Indium nitride (InN) films were grown on Si (111), bulk GaN, quartz and sapphire substrates by radio frequency magnetron sputtering. Prior to the film deposition, a zinc oxide (ZnO) buffer layer was deposited on all the substrates. The x-ray diffraction patterns of InN films on ZnO-buffered substrates indicated c-plane-oriented films whereas the Raman spectroscopy results indicated A1 (LO) and E2 (high) modes of InN on all the substrates. The crystalline quality of InN was found to be better on sapphire and quartz than on the other substrates. The surface roughness of InN was studied using an atomic force microscope. The results indicated higher surface roughness of the film on sapphire as compared to the others; however, roughness of the film was lower than 8 nm on all the substrates. The electrical properties indicated higher electron mobility of InN (20.20 cm2/Vs) on bulk GaN than on the other substrates. The optical band gap of InN film was more than 2 eV in all the cases and was attributed to high carrier concentration in the film.

Zeta potential orientation dependence of sapphire substrates.

PubMed

Kershner, Ryan J; Bullard, Joseph W; Cima, Michael J

2004-05-11

The zeta potential of planar sapphire substrates for three different crystallographic orientations was measured by a streaming potential technique in the presence of KCl and (CH3)4NCl electrolytes. The streaming potential was measured for large single crystalline C-plane (0001), A-plane (1120), and R-plane (1102) wafers over a full pH range at three or more ionic strengths ranging from 1 to 100 mM. The roughness of the epi-polished wafers was verified using atomic force microscopy to be on the order of atomic scale, and X-ray photoelectron spectroscopy (XPS) was used to ensure that the samples were free of silica and other contaminants. The results reveal a shift in the isoelectric point (iep) of the three samples by as much as two pH units, with the R-plane surface exhibiting the most acidic behavior and the C-plane samples having the highest iep. The iep at all ionic strengths was tightly centered around a single pH for each wafer. These values of iep are substantially different from the range of pH 8-10 consistently reported in the literature for alpha-Al2O3 particles. Particle zeta potential measurements were performed on a model powder using phase analysis light scattering, and the iep was confirmed to occur at pH 8. Modified Auger parameters (MAP) were calculated from XPS spectra of a monolayer of iridium metal deposited on the sapphire by electron beam deposition. A shift in MAP consistent with the observed differences in iep of the surfaces confirms the effect of surface structure on the transfer of charge between the Ir and sapphire, hence accounting for the changes in acidity as a function of crystallographic orientation.

High-temperature sensor instrumentation with a thin-film-based sapphire fiber.

PubMed

Guo, Yuqing; Xia, Wei; Hu, Zhangzhong; Wang, Ming

2017-03-10

A novel sapphire fiber-optic high-temperature sensor has been designed and fabricated based on blackbody radiation theory. Metallic molybdenum has been used as the film material to develop the blackbody cavity, owing to its relatively high melting point compared to that of sapphire. More importantly, the fabrication process for the blackbody cavity is simple, efficient, and economical. Thermal radiation emitted from such a blackbody cavity is transmitted via optical fiber to a remote place for detection. The operating principle, the sensor structure, and the fabrication process are described here in detail. The developed high-temperature sensor was calibrated through a calibration blackbody furnace at temperatures from 900°C to 1200°C and tested by a sapphire crystal growth furnace up to 1880°C. The experimental results of our system agree well with those from a commercial Rayteck MR1SCCF infrared pyrometer, and the maximum residual is approximately 5°C, paving the way for high-accuracy temperature measurement especially for extremely harsh environments.

Bonding Lexan and sapphire to form high-pressure, flame-resistant window

NASA Technical Reports Server (NTRS)

Richardson, William R.; Walker, Ernie D.

1987-01-01

Flammable materials have been studied in normal gravity and microgravity for many years. Photography plays a major role in the study of the combustion process giving a permanent visual record that can be analyzed. When these studies are extended to manned spacecraft, safety becomes a primary concern. The need for a high-pressure, flame-resistant, shatter-resistant window permitting photographic recording of combustion experiments in manned spacecraft prompted the development of a method for bonding Lexan and sapphire. Materials that resist shattering (e.g., Lexan) are not compatible with combustion experiments; the material loses strength at combustion temperatures. Sapphire is compatible with combustion temperatures in oxygen-enriched atmospheres but is subject to shattering. Combining the two materials results in a shatter-resistant, flame-resistant window. Combustion in microgravity produces a low-visibility flame; however, flame propagation and flame characteristics are readily visible as long as there is no deterioration of the image. Since an air gap between the Lexan and the sapphire would reduce transmission, a method was developed for bonding these unlike materials to minimize light loss.

Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

NASA Technical Reports Server (NTRS)

Choi, Sang; King, Glen; Park, Yeonjoon

2009-01-01

SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than

Fabrication of wafer-scale nanopatterned sapphire substrate through phase separation lithography

NASA Astrophysics Data System (ADS)

Guo, Xu; Ni, Mengyang; Zhuang, Zhe; Dai, Jiangping; Wu, Feixiang; Cui, Yushuang; Yuan, Changsheng; Ge, Haixiong; Chen, Yanfeng

2016-04-01

A phase separation lithography (PSL) based on polymer blend provides an extremely simple, low-cost, and high-throughput way to fabricate wafer-scale disordered nanopatterns. This method was introduced to fabricate nanopatterned sapphire substrates (NPSSs) for GaN-based light-emitting diodes (LEDs). The PSL process only involved in spin-coating of polystyrene (PS)/polyethylene glycol (PEG) polymer blend on sapphire substrate and followed by a development with deionized water to remove PEG moiety. The PS nanoporous network was facilely obtained, and the structural parameters could be effectively tuned by controlling the PS/PEG weight ratio of the spin-coating solution. 2-in. wafer-scale NPSSs were conveniently achieved through the PS nanoporous network in combination with traditional nanofabrication methods, such as O2 reactive ion etching (RIE), e-beam evaporation deposition, liftoff, and chlorine-based RIE. In order to investigate the performance of such NPSSs, typical blue LEDs with emission wavelengths of ~450 nm were grown on the NPSS and a flat sapphire substrate (FSS) by metal-organic chemical vapor deposition, respectively. The integral photoluminescence (PL) intensity of the NPSS LED was enhanced by 32.3 % compared to that of the FSS-LED. The low relative standard deviation of 4.7 % for PL mappings of NPSS LED indicated the high uniformity of PL data across the whole 2-in. wafer. Extremely simple, low cost, and high throughput of the process and the ability to fabricate at the wafer scale make PSL a potential method for production of nanopatterned sapphire substrates.

Temperature Compensated Sapphire Resonator for Ultrastable Oscillator Operating at Temperatures Near 77 Deg Kelvin

NASA Technical Reports Server (NTRS)

Dick, G. John (Inventor); Santiago, David G. (Inventor)

1999-01-01

A sapphire resonator for an ultrastable oscillator capable of substantial performance improvements over the best available crystal quartz oscillators in a compact cryogenic package is based on a compensation mechanism enabled by the difference between copper and sapphire thermal expansion coefficients for so tuning the resonator as to cancel the temperature variation of the sapphire's dielectric constant. The sapphire resonator consists of a sapphire ring separated into two parts with webs on the outer end of each to form two re-entrant parts which are separated by a copper post. The re-entrant parts are bonded to the post by indium solder for good thermal conductivity between parts of that subassembly which is supported on the base plate of a closed copper cylinder (rf shielding casing) by a thin stainless steel cylinder. A unit for temperature control is placed in the stainless steel cylinder and is connected to the subassembly of re-entrant parts and copper post by a layer of indium for good thermal conduction. In normal use, the rf shielding casing is placed in a vacuum tank which is in turn placed in a thermos flask of liquid nitrogen. The temperature regulator is controlled from outside the thermos flask to a temperature in a range of about 40K to 150K, such as 87K for the WGH-811, mode of resonance in response to microwave energy inserted into the rf shielding casing through a port from an outside source.

Influence of Cr and W alloying on the fiber-matrix interfacial shear strength in cast and directionally solidified sapphire NiAl composites

NASA Technical Reports Server (NTRS)

Asthana, R.; Tiwari, R.; Tewari, S. N.

1995-01-01

Sapphire-reinforced NiAl matrix composites with chromium or tungsten as alloying additions were synthesized using casting and zone directional solidification (DS) techniques and characterized by a fiber pushout test as well as by microhardness measurements. The sapphire-NiAl(Cr) specimens exhibited an interlayer of Cr rich eutectic at the fiber-matrix interface and a higher interfacial shear strength compared to unalloyed sapphire-NiAl specimens processed under identical conditions. In contrast, the sapphire-NiAl(W) specimens did not show interfacial excess of tungsten rich phases, although the interfacial shear strength was high and comparable to that of sapphire-NiAl(Cr). The postdebond sliding stress was higher in sapphire-NiAl(Cr) than in sapphire-NiAl(W) due to interface enrichment with chromium particles. The matrix microhardness progressively decreased with increasing distance from the interface in both DS NiAl and NiAl(Cr) specimens. The study highlights the potential of casting and DS techniques to improve the toughness and strength of NiAl by designing dual-phase microstructures in NiAl alloys reinforced with sapphire fibers.

Control of relative carrier-envelope phase slip in femtosecond Ti:sapphire and Cr:forsterite lasers.

PubMed

Kobayashi, Yohei; Torizuka, Kenji; Wei, Zhiyi

2003-05-01

We were able to control relative carrier-envelope phase slip among mode-locked Ti:sapphire and Cr:forsterite lasers by employing electronic feedback. The pulse timings of these lasers were passively synchronized with our crossing-beam technique. Since the optical-frequency ratio of Ti:sapphire and Cr:forsterite is approximately 3:2, we can observe the phase relation by superimposing the third harmonic of Cr:forsterite and the second harmonic of Ti:sapphire lasers in time and in space. The spectrum width of the locked beat note was less than 3 kHz, which corresponds to the controlled fluctuation of a cavity-length difference of less than 10 pm.

Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

NASA Astrophysics Data System (ADS)

Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

2018-04-01

The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

Microdynamic Devices Fabricated on Silicon-On-Sapphire Substrates.

DTIC Science & Technology

Silicon-on-sapphire substrates are provided for the fabrication of micromechanical devices, such as micromotors . The high voltage stand-off...a consequence, the electrostatically driven devices, micromotors , can be incorporated in the integrated circuits and yet be powered at elevated voltages to increase their work potential.

New approach for pattern collapse problem by increasing contact area at sub-100nm patterning

NASA Astrophysics Data System (ADS)

Lee, Sung-Koo; Jung, Jae Chang; Lee, Min Suk; Lee, Sung K.; Kim, Sam Young; Hwang, Young-Sun; Bok, Cheol K.; Moon, Seung-Chan; Shin, Ki S.; Kim, Sang-Jung

2003-06-01

To accomplish minimizing feature size to sub 100nm, new light sources for photolithography are emerging, such as ArF(193nm), F2(157nm), and EUV(13nm). However as the pattern size decreases to sub 100nm, a new obstacle, that is pattern collapse problem, becomes most serious bottleneck to the road for the sub 100 nm lithography. The main reason for this pattern collapse problem is capillary force that is increased as the pattern size decreases. As a result there were some trials to decrease this capillary force by changing developer or rinse materials that had low surface tension. On the other hands, there were other efforts to increase adhesion between resists and sub materials (organic BARC). In this study, we will propose a novel approach to solve pattern collapse problems by increasing contact area between sub material (organic BARC) and resist pattern. The basic concept of this approach is that if nano-scale topology is made at the sub material, the contact area between sub materials and resist will be increased. The process scheme was like this. First after coating and baking of organic BARC material, the nano-scale topology (3~10nm) was made by etching at this organic BARC material. On this nano-scale topology, resist was coated and exposed. Finally after develop, the contact area between organic BARC and resist could be increased. Though nano-scale topology was made by etching technology, this 20nm topology variation induced large substrate reflectivity of 4.2% and as a result the pattern fidelity was not so good at 100nm 1:1 island pattern. So we needed a new method to improve pattern fidelity problem. This pattern fidelity problem could be solved by introducing a sacrificial BARC layer. The process scheme was like this. First organic BARC was coated of which k value was about 0.64 and then sacrificial BARC layers was coated of which k value was about 0.18 on the organic BARC. The nano-scale topology (1~4nm) was made by etching of this sacrificial BARC layer

Testing of Sapphire Optical Fiber and Sensors in Intense Radiation Fields When Subjected to Very High Temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blue, Thomas; Windl, Wolfgang

The primary objective of this project was to determine the optical attenuation and signal degradation of sapphire optical fibers & sensors (temperature & strain), in-situ, operating at temperatures up to 1500°C during reactor irradiation through experiments and modeling. The results will determine the feasibility of extending sapphire optical fiber-based instrumentation to extremely high temperature radiation environments. This research will pave the way for future testing of sapphire optical fibers and fiber-based sensors under conditions expected in advanced high temperature reactors.

Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

NASA Technical Reports Server (NTRS)

Kim, Hyun Jung; Choi, Sang H.; Bae, Hyung-Bin; Lee, Tae Woo

2012-01-01

The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

Patterned self-assembled monolayers for nanoscale lithography and the control of catalytically produced electroosmosis

NASA Astrophysics Data System (ADS)

Subramanian, Shyamala

different end-group functionality impart different surface zeta potential to the gold surface. Zeta-potential engineering via patterning various end-group functionalized SAMs on gold surface to control direction of catalytically induced electroosmotic fluid flow is demonstrated for the first time. This work also describes the application of catalytic power to produce controlled rotational motion. Gold gears-like structures made using conventional microfabrication techniques and propelled by catalytic power are shown to rotate at speeds of 1 rotation/sec in a dilute solution of hydrogen peroxide. Fabrication of a force sensor for detection and measurement of catalytic forces is also introduced. The force sensor, with sensitivity in the piconewton range, consists of a microcantilever with a catalytically active silver post patterned on the tip. Changes in cantilever displacement and resonance frequency due to the catalytic force were monitored as a function of concentration of hydrogen peroxide. Overall, this thesis integrates SAM deposition and patterning techniques with conventional fabrication methods to engineer and control nanoscale structures and devices. Possible future device designs are described including CMOS devices having channel width defined using molecular ruler lithography with sacrificial hosts, drug delivery device based on AFM force sensor and channeless pumps powered by catalytic reactions with SAM controlled electroosmotic fluid flow.

An anti-bacterial approach to nanoscale roughening of biomimetic rice-like pattern PP by thermal annealing

NASA Astrophysics Data System (ADS)

Jafari Nodoushan, Emad; Ebrahimi, Nadereh Golshan; Ayazi, Masoumeh

2017-11-01

In this paper, we introduced thermal annealing treatment as an effective way of increasing the nanoscale roughness of a semi-crystalline polymer surface. Annealing treatment applied to a biomimetic microscale pattern of rice leaf to achieve a superhydrophobic surface with a hierarchical roughness. Resulted surfaces was characterized by XRD, AFM and FE-SEM instruments and showed an increase of roughness and cristallinity within both time and temperature of treatment. These two parameters also impact on measured static contact angle up to 158°. Bacterial attachment potency has an inverse relationship with the similarity of surface pattern dimensions and bacterial size and due to that, thermal annealing could be an effective way to create anti-bacterial surface beyond its effect on water repellency. Point in case, the anti-bacterial properties of produced water-repellence surfaces of PP were measured and counted colonies of both gram-negative (E. coli) and gram-positive (S. aureus) bacteria reduced with the nature of PP and hierarchical pattern on that. Anti-bacterial characterization of the resulted surface reveals a stunning reduction in adhesion of gram-positive bacteria to the surface. S. aureus reduction rates equaled to 95% and 66% when compared to control blank plate and smooth surface of PP. Moreover, it also could affect the other type of bacteria, gram-negative (E. coli). In the latter case, adhesion reduction rates calculated 66% and 53% when against to the same controls, respectively.

Comparison of stress states in GaN films grown on different substrates: Langasite, sapphire and silicon

NASA Astrophysics Data System (ADS)

Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang

2015-09-01

We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch ( 3.2%) and thermal expansion coefficient difference ( 7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.

High-pressure sapphire cell for phase equilibria measurements of CO2/organic/water systems.

PubMed

Pollet, Pamela; Ethier, Amy L; Senter, James C; Eckert, Charles A; Liotta, Charles L

2014-01-24

The high pressure sapphire cell apparatus was constructed to visually determine the composition of multiphase systems without physical sampling. Specifically, the sapphire cell enables visual data collection from multiple loadings to solve a set of material balances to precisely determine phase composition. Ternary phase diagrams can then be established to determine the proportion of each component in each phase at a given condition. In principle, any ternary system can be studied although ternary systems (gas-liquid-liquid) are the specific examples discussed herein. For instance, the ternary THF-Water-CO2 system was studied at 25 and 40 °C and is described herein. Of key importance, this technique does not require sampling. Circumventing the possible disturbance of the system equilibrium upon sampling, inherent measurement errors, and technical difficulties of physically sampling under pressure is a significant benefit of this technique. Perhaps as important, the sapphire cell also enables the direct visual observation of the phase behavior. In fact, as the CO2 pressure is increased, the homogeneous THF-Water solution phase splits at about 2 MPa. With this technique, it was possible to easily and clearly observe the cloud point and determine the composition of the newly formed phases as a function of pressure. The data acquired with the sapphire cell technique can be used for many applications. In our case, we measured swelling and composition for tunable solvents, like gas-expanded liquids, gas-expanded ionic liquids and Organic Aqueous Tunable Systems (OATS)(1-4). For the latest system, OATS, the high-pressure sapphire cell enabled the study of (1) phase behavior as a function of pressure and temperature, (2) composition of each phase (gas-liquid-liquid) as a function of pressure and temperature and (3) catalyst partitioning in the two liquid phases as a function of pressure and composition. Finally, the sapphire cell is an especially effective tool to gather

Removal of Lattice Imperfections that Impact the Optical Quality of Ti:Sapphire using Advanced Magnetorheological Finishing Techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menapace, J A; Schaffers, K I; Bayramian, A J

2008-02-26

Advanced magnetorheological finishing (MRF) techniques have been applied to Ti:sapphire crystals to compensate for sub-millimeter lattice distortions that occur during the crystal growing process. Precise optical corrections are made by imprinting topographical structure onto the crystal surfaces to cancel out the effects of the lattice distortion in the transmitted wavefront. This novel technique significantly improves the optical quality for crystals of this type and sets the stage for increasing the availability of high-quality large-aperture sapphire and Ti:sapphire optics in critical applications.

Controlling material birefringence in sapphire via self-assembled, sub-wavelength defects

NASA Astrophysics Data System (ADS)

Singh, Astha; Sharma, Geeta; Ranjan, Neeraj; Mittholiya, Kshitij; Bhatnagar, Anuj; Singh, B. P.; Mathur, Deepak; Vasa, Parinda

2018-02-01

Birefringence is the optical property of a material having a refractive index that depends on the polarization and propagation direction of light. Generally, this is an intrinsic optical property of a material and cannot be altered. Here, we report a novel technique—direct laser writing—that enables us to control the natural, material birefringence of sapphire over a broad range of wavelengths. The broadband form birefringence originating from self-assembled, periodic array of sub-wavelength (˜ 50-200 nm) defects created by laser writing, can enhance, suppress or maintain the material birefringence of sapphire without affecting its transparency range in visible or its surface quality.

Thermal boundary resistance between sapphire and aluminum monocrystals at low temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sahling, S.; Engert, J.; Gladun, A.

1981-12-01

The thermal boundary resistance at boundaries between monocrystalline sapphire and monocrystalline aluminum and between monocrystalline sapphire and polycrystalline aluminum has been measured in the temperature range from 0.1 to 6 K with aluminum in the superconducting and normal states. The ratio of the thermal boundary resistance of the aluminum monocrystals in the superconducting state to that in the normal state increases as the temperature is lowered, reaches a maximum at about 0.13 K, and decreases at still lower temperatures. At the maximum, the thermal boundary resistance in the superconducting state is two orders of magnitude larger than the resistance inmore » the normal state.« less

High-Temperature Mechanical Properties of Cr(3+) Doped Sapphire Fibers

NASA Technical Reports Server (NTRS)

Sayir, A.; QuispeCancapa, J. J.; deArellanoLopez, A. R.; Gray, Hugh R. (Technical Monitor)

2002-01-01

High-temperature slow-crack growth of single crystal 10 wt% Cr2O3 - Al2O3 (nominal composition) fibers has been studied by tensile rupture experiments at 1400 C, under different stressing rates (0.5 to 41.5 MPa/s). Slow-crack growth (SCG) is less pronounced with increasing Cr2O3. Rupture stresses increased with the stressing rate from 397 MPa to 515 MPa, resulting in a SCG exponent, N=19. The Cr2O3 composition was analyzed by Energy Dispersed X-Ray Spectra (EDS) and fracture surfaces were studied by scanning electron microscopy (SEM). Results are compared with previous studies on 100-300 ppm Cr3(+) doped sapphire fibers and on commercial sapphire fibers.

Shaping nanoscale magnetic domain memory in exchange-coupled ferromagnets by field cooling.

PubMed

Chesnel, Karine; Safsten, Alex; Rytting, Matthew; Fullerton, Eric E

2016-06-01

The advance of magnetic nanotechnologies relies on detailed understanding of nanoscale magnetic mechanisms in materials. Magnetic domain memory (MDM), that is, the tendency for magnetic domains to repeat the same pattern during field cycling, is important for magnetic recording technologies. Here we demonstrate MDM in [Co/Pd]/IrMn films, using coherent X-ray scattering. Under illumination, the magnetic domains in [Co/Pd] produce a speckle pattern, a unique fingerprint of their nanoscale configuration. We measure MDM by cross-correlating speckle patterns throughout magnetization processes. When cooled below its blocking temperature, the film exhibits up to 100% MDM, induced by exchange-coupling with the underlying IrMn layer. The degree of MDM drastically depends on cooling conditions. If the film is cooled under moderate fields, MDM is high throughout the entire magnetization loop. If the film is cooled under nearly saturating field, MDM vanishes, except at nucleation and saturation. Our findings show how to fully control the occurrence of MDM by field cooling.

Shaping nanoscale magnetic domain memory in exchange-coupled ferromagnets by field cooling

PubMed Central

Chesnel, Karine; Safsten, Alex; Rytting, Matthew; Fullerton, Eric E.

2016-01-01

The advance of magnetic nanotechnologies relies on detailed understanding of nanoscale magnetic mechanisms in materials. Magnetic domain memory (MDM), that is, the tendency for magnetic domains to repeat the same pattern during field cycling, is important for magnetic recording technologies. Here we demonstrate MDM in [Co/Pd]/IrMn films, using coherent X-ray scattering. Under illumination, the magnetic domains in [Co/Pd] produce a speckle pattern, a unique fingerprint of their nanoscale configuration. We measure MDM by cross-correlating speckle patterns throughout magnetization processes. When cooled below its blocking temperature, the film exhibits up to 100% MDM, induced by exchange-coupling with the underlying IrMn layer. The degree of MDM drastically depends on cooling conditions. If the film is cooled under moderate fields, MDM is high throughout the entire magnetization loop. If the film is cooled under nearly saturating field, MDM vanishes, except at nucleation and saturation. Our findings show how to fully control the occurrence of MDM by field cooling. PMID:27248368

Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Yang, Xu; Nitta, Shugo; Pristovsek, Markus; Liu, Yuhuai; Nagamatsu, Kentaro; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi

2018-05-01

Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.

Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire.

PubMed

Lin, Hui-Feng; Wu, Chun-Te; Chien, Wei-Cheng; Chen, Sheng-Wen; Kao, Hui-Ling; Chyi, Jen-Inn; Chen, Jyh-Shin

2005-05-01

Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300 degrees C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and use their semiconducting, optoelectronic, and piezoelectric properties.

Shear Strength and Interfacial Toughness Characterization of Sapphire-Epoxy Interfaces for Nacre-Inspired Composites.

PubMed

Behr, Sebastian; Jungblut, Laura; Swain, Michael V; Schneider, Gerold A

2016-10-12

The common tensile lap-shear test for adhesive joints is inappropriate for brittle substrates such as glasses or ceramics where stress intensifications due to clamping and additional bending moments invalidate results. Nevertheless, bonding of glasses and ceramics is still important in display applications for electronics, in safety glass and ballistic armor, for dental braces and restoratives, or in recently developed bioinspired composites. To mechanically characterize adhesive bondings in these fields nonetheless, a novel approach based on the so-called Schwickerath test for dental sintered joints is used. This new method not only matches data from conventional analysis but also uniquely combines the accurate determination of interfacial shear strength and toughness in one simple test. The approach is verified for sapphire-epoxy joints that are of interest for bioinspired composites. For these, the procedure not only provides quantitative interfacial properties for the first time, it also exemplarily suggests annealing of sapphire at 1000 °C for 10 h for mechanically and economically effective improvements of the interfacial bond strength and toughness. With increases of strength and toughness from approximately 8 to 29 MPa and from 2.6 to 35 J/m 2 , respectively, this thermal modification drastically enhances the properties of unmodified sapphire-epoxy interfaces. At the same time, it is much more convenient than wet-chemical approaches such as silanization. Hence, besides the introduction of a new testing procedure for adhesive joints of brittle or expensive substrates, a new and facile annealing process for improvements of the adhesive properties of sapphire is suggested and quantitative data for the mechanical properties of sapphire-epoxy interfaces that are common in synthetic nacre-inspired composites are provided for the first time.

Micro to Nanoscale Engineering of Surface Precipitates Using Reconfigurable Contact Lines.

PubMed

Kabi, Prasenjit; Chaudhuri, Swetaprovo; Basu, Saptarshi

2018-02-06

Nanoscale engineering has traditionally adopted the chemical route of synthesis or optochemical techniques such as lithography requiring large process times, expensive equipment, and an inert environment. Directed self-assembly using evaporation of nanocolloidal droplet can be a potential low-cost alternative across various industries ranging from semiconductors to biomedical systems. It is relatively simple to scale and reorient the evaporation-driven internal flow field in an evaporating droplet which can direct dispersed matter into functional agglomerates. The resulting functional precipitates not only exhibit macroscopically discernible changes but also nanoscopic variations in the particulate assembly. Thus, the evaporating droplet forms an autonomous system for nanoscale engineering without the need for external resources. In this article, an indigenous technique of interfacial re-engineering, which is both simple and inexpensive to implement, is developed. Such re-engineering widens the horizon for surface patterning previously limited by the fixed nature of the droplet interface. It involves handprinting hydrophobic lines on a hydrophilic substrate to form a confinement of any selected geometry using a simple document stamp. Droplets cast into such confinements get modulated into a variety of shapes. The droplet shapes control the contact line behavior, evaporation dynamics, and complex internal flow pattern. By exploiting the dynamic interplay among these variables, we could control the deposit's macro- as well as nanoscale assembly not possible with simple circular droplets. We provide a detailed mechanism of the coupling at various length scales enabling a predictive capability in custom engineering, particularly useful in nanoscale applications such as photonic crystals.

Ti:sapphire-pumped diamond Raman laser with sub-100-fs pulse duration.

PubMed

Murtagh, Michelle; Lin, Jipeng; Mildren, Richard P; Spence, David J

2014-05-15

We report a synchronously pumped femtosecond diamond Raman laser operating at 895 nm with a 33% slope efficiency. Pumped using a mode-locked Ti:sapphire laser at 800 nm with a duration of 170 fs, the bandwidth of the Stokes output is broadened and chirped to enable subsequent pulse compression to 95 fs using a prism pair. Modeling results indicate that self-phase modulation drives the broadening of the Stokes spectrum in this highly transient laser. Our results demonstrate the potential for Raman conversion to extend the wavelength coverage and pulse shorten Ti:sapphire lasers.

Ti:Sapphire micro-structures by femtosecond laser inscription: Guiding and luminescence properties

NASA Astrophysics Data System (ADS)

Ren, Yingying; Jiao, Yang; Vázquez de Aldana, Javier R.; Chen, Feng

2016-08-01

We report on the fabrication of buried cladding waveguides with different diameters in a Ti:Sapphire crystal by femtosecond laser inscription. The propagation properties are studied, showing that the cladding waveguides could support near- to mid-infrared waveguiding at both TE and TM polarizations. Confocal micro-photoluminescence experiments reveal that the original fluorescence properties in the waveguide region are very well preserved, while it suffers from a strong quenching at the centers of laser induced filaments. Broadband waveguide fluorescence emissions with high efficiency are realized, indicating the application of the cladding waveguides in Ti:Sapphire as compact broadband luminescence sources in biomedical fields.

JFET/SOS (Junction Field-Effect Transistor/Silicon-on-Sapphire) Devices: Gamma-Radiation-Induced Effects.

DTIC Science & Technology

1988-03-01

Results, ATR-86A(8501)-1, The Aerospace Corporation: El Segundo, Calif. (20 May 1987). 3. D. Neaman , W. Shedd, and B. Buchanan, "Permanently Ionizing...Radiation Effects in Dielectrically Bounded Field-Effect Transistors," IEEE Trans.. Nucl. Sci. NS-20 [6], 158-165 (Decembe. 1973). 4. D. Neaman , W. Shedd...1974). 5. D. Neaman , W. Shedd, and B. Buchanan, "Silicon-Sapphire Interface Charge Trapping -- Effects of Sapphire Type and Epi Growth Conditions

Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Sung Bo, E-mail: bolee@snu.ac.kr; Han, Heung Nam, E-mail: hnhan@snu.ac.kr; Lee, Dong Nyung

Much research has been done to reduce dislocation densities for the growth of GaN on sapphire, but has paid little attention to the elastic behavior at the GaN/sapphire interface. In this study, we have examined effects of the addition of Si to a sapphire substrate on its elastic property and on the growth of GaN deposit. Si atoms are added to a c-plane sapphire substrate by ion implantation. The ion implantation results in scratches on the surface, and concomitantly, inhomogeneous distribution of Si. The scratch regions contain a higher concentration of Si than other regions of the sapphire substrate surface,more » high-temperature GaN being poorly grown there. However, high-temperature GaN is normally grown in the other regions. The GaN overlayer in the normally-grown regions is observed to have a lower TD density than the deposit on the bare sapphire substrate (with no Si accommodated). As compared with the film on an untreated, bare sapphire, the cathodoluminescence defect density decreases by 60 % for the GaN layer normally deposited on the Si-ion implanted sapphire. As confirmed by a strain mapping technique by transmission electron microscopy (geometric phase analysis), the addition of Si in the normally deposited regions forms a surface layer in the sapphire elastically more compliant than the GaN overlayer. The results suggest that the layer can largely absorb the misfit strain at the interface, which produces the overlayer with a lower defect density. Our results highlight a direct correlation between threading-dislocation density in GaN deposits and the elastic behavior at the GaN/sapphire interface, opening up a new pathway to reduce threading-dislocation density in GaN deposits.« less

Structural, transport and microwave properties of 123/sapphire films: Thickness effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D.

1994-12-31

The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

Neurosurgery contact handheld probe based on sapphire shaped crystal

NASA Astrophysics Data System (ADS)

Shikunova, I. A.; Stryukov, D. O.; Rossolenko, S. N.; Kiselev, A. M.; Kurlov, V. N.

2017-01-01

A handheld contact probe based on sapphire shaped crystal is developed for intraoperative spectrally-resolved optical diagnostics, laser coagulation and aspiration of malignant brain tissue. The technology was integrated into the neurosurgical workflow for intraoperative real-time identification and removing of invasive brain cancer.

Mathematical modeling of a Ti:sapphire solid-state laser

NASA Technical Reports Server (NTRS)

Swetits, John J.

1987-01-01

The project initiated a study of a mathematical model of a tunable Ti:sapphire solid-state laser. A general mathematical model was developed for the purpose of identifying design parameters which will optimize the system, and serve as a useful predictor of the system's behavior.

A Study on the Formation of 2-Dimensional Tungsten Disulfide Thin Films on Sapphire Substrate by Sputtering and High Temperature Rapid Thermal Processing.

PubMed

Nam, Hanyeob; Kim, Hong-Seok; Han, Jae-Hee; Kwon, Sang Jik; Cho, Eou Sik

2018-09-01

As direct formation of p-type two-dimensional transition metal dichalcogenides (TMDC) films on substrates, tungsten disulfide (WS2) thin films were deposited onto sapphire glass substrate through shadow mask patterns by radio-frequency (RF) sputtering at different sputtering powers ranging from 60 W to 150 W and annealed by rapid thermal processing (RTP) at various high temperatures ranging from 500 °C to 800 °C. Based on scanning electron microscope (SEM) images and Raman spectra, better surface roughness and mode dominant E12g and A1g peaks were found for WS2 thin films prepared at higher RF sputtering powers. It was also possible to obtain high mobilities and carrier densities for all WS2 thin films based on results of Hall measurements. Process conditions for these WS2 thin films on sapphire substrate were optimized to low RF sputtering power and high temperature annealing.

Nitridation of an unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surface in an ammonia flow

DOE Office of Scientific and Technical Information (OSTI.GOV)

Milakhina, D. S., E-mail: denironman@mail.ru; Malin, T. V.; Mansurov, V. G.

This paper is devoted to the study of the nitridation of unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surfaces in an ammonia flow by reflection high-energy electron diffraction (RHEED). The experimental results show that sapphire nitridation occurs on the unreconstructed (1 × 1) surface, which results in AlN phase formation on the substrate surface. However, if sapphire nitridation is preceded by high-temperature annealing (1150°C) resulting in sapphire surface reconstruction with formation of the (√31 ×√31)R ± 9° surface, the crystalline AlN phase on the sapphire surface is not formed during surface exposure to an ammonia flow.

Synthesis and Transfer of Large-Area Monolayer WS2 Crystals: Moving Toward the Recyclable Use of Sapphire Substrates.

PubMed

Xu, Zai-Quan; Zhang, Yupeng; Lin, Shenghuang; Zheng, Changxi; Zhong, Yu Lin; Xia, Xue; Li, Zhipeng; Sophia, Ponraj Joice; Fuhrer, Michael S; Cheng, Yi-Bing; Bao, Qiaoliang

2015-06-23

Two-dimensional layered transition metal dichalcogenides (TMDs) show intriguing potential for optoelectronic devices due to their exotic electronic and optical properties. Only a few efforts have been dedicated to large-area growth of TMDs. Practical applications will require improving the efficiency and reducing the cost of production, through (1) new growth methods to produce large size TMD monolayer with less-stringent conditions, and (2) nondestructive transfer techniques that enable multiple reuse of growth substrate. In this work, we report to employ atmospheric pressure chemical vapor deposition (APCVD) for the synthesis of large size (>100 μm) single crystals of atomically thin tungsten disulfide (WS2), a member of TMD family, on sapphire substrate. More importantly, we demonstrate a polystyrene (PS) mediated delamination process via capillary force in water which reduces the etching time in base solution and imposes only minor damage to the sapphire substrate. The transferred WS2 flakes are of excellent continuity and exhibit comparable electron mobility after several growth cycles on the reused sapphire substrate. Interestingly, the photoluminescence emission from WS2 grown on the recycled sapphire is much higher than that on fresh sapphire, possibly due to p-type doping of monolayer WS2 flakes by a thin layer of water intercalated at the atomic steps of the recycled sapphire substrate. The growth and transfer techniques described here are expected to be applicable to other atomically thin TMD materials.

Silk protein nanowires patterned using electron beam lithography.

PubMed

Pal, Ramendra K; Yadavalli, Vamsi K

2018-08-17

Nanofabrication approaches to pattern proteins at the nanoscale are useful in applications ranging from organic bioelectronics to cellular engineering. Specifically, functional materials based on natural polymers offer sustainable and environment-friendly substitutes to synthetic polymers. Silk proteins (fibroin and sericin) have emerged as an important class of biomaterials for next generation applications owing to excellent optical and mechanical properties, inherent biocompatibility, and biodegradability. However, the ability to precisely control their spatial positioning at the nanoscale via high throughput tools continues to remain a challenge. In this study electron beam lithography (EBL) is used to provide nanoscale patterning using methacrylate conjugated silk proteins that are photoreactive 'photoresists' materials. Very low energy electron beam radiation can be used to pattern silk proteins at the nanoscale and over large areas, whereby such nanostructure fabrication can be performed without specialized EBL tools. Significantly, using conducting polymers in conjunction with these silk proteins, the formation of protein nanowires down to 100 nm is shown. These wires can be easily degraded using enzymatic degradation. Thus, proteins can be precisely and scalably patterned and doped with conducting polymers and enzymes to form degradable, organic bioelectronic devices.

Femtosecond laser pulse distortion in Ti:sapphire multipass amplifier by atomic phase shifts

NASA Astrophysics Data System (ADS)

Hwang, Seungjin; Jeong, Jihoon; Cho, Seryeyohan; Lee, Jongmin; Yu, Tae Jun

2017-11-01

We have derived modified Frantz-Nodvik equations that simultaneously account for atomic phase shift (APS) and gain depletion as the chirped laser pulse passes through a gain medium, and have analyzed the effect of temporal pulse distortion in a Ti:sapphire multipass amplifier chain. The combination of APS and gain depletion distorted a temporal pulse and decreased the peak power. The pulse width increased from 21.3 fs to 22.8 fs and the peak power reduced to 89% for the PW class Ti:sapphire CPA laser system in the particular conditions.

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

PubMed

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

2011-06-20

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

Gate-controlled-diodes in silicon-on-sapphire: A computer simulation

NASA Technical Reports Server (NTRS)

Gassaway, J. D.

1974-01-01

The computer simulation of the electrical behavior of a Gate-Controlled Diode (GCD) fabricated in Silicon-On-Sapphire (SOS) was described. A procedure for determining lifetime profiles from capacitance and reverse current measurements on the GCD was established. Chapter 1 discusses the SOS structure and points out the need of lifetime profiles to assist in device design for GCD's and bipolar transistors. Chapter 2 presents the one-dimensional analytical formula for electrostatic analysis of the SOS-GCD which are useful for data interpretation and setting boundary conditions on a simplified two-dimensional analysis. Chapter 3 gives the results of a two-dimensional analysis which treats the field as one-dimensional until the silicon film is depleted and the field penetrates the sapphire substrate. Chapter 4 describes a more complete two-dimensional model and gives results of programs implementing the model.

Sapphire implant based neuro-complex for deep-lying brain tumors phototheranostics

NASA Astrophysics Data System (ADS)

Sharova, A. S.; Maklygina, YU S.; Yusubalieva, G. M.; Shikunova, I. A.; Kurlov, V. N.; Loschenov, V. B.

2018-01-01

The neuro-complex as a combination of sapphire implant optical port and osteoplastic biomaterial "Collapan" as an Aluminum phthalocyanine nanoform photosensitizer (PS) depot was developed within the framework of this study. The main goals of such neuro-complex are to provide direct access of laser radiation to the brain tissue depth and to transfer PS directly to the pathological tissue location that will allow multiple optical phototheranostics of the deep-lying tumor region without repeated surgical intervention. The developed complex spectral-optical properties research was carried out by photodiagnostics method using the model sample: a brain tissue phantom. The optical transparency of sapphire implant allows obtaining a fluorescent signal with high accuracy, comparable to direct measurement "in contact" with the tissue.

Detection of beryllium treatment of natural sapphires by NRA

NASA Astrophysics Data System (ADS)

Gutiérrez, P. C.; Ynsa, M.-D.; Climent-Font, A.; Calligaro, T.

2010-06-01

Since the 1990's, artificial treatment of natural sapphires (Al 2O 3 crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of μg/g of beryllium in Al 2O 3 crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-μm diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction 9Be(α, nγ) 12C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt γ-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt γ-ray produced during irradiation by the aluminium of the sapphire matrix through the 27Al(α, pγ) 30Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required μg/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 μC, beryllium concentrations from 5 to 16 μg/g have been measured in the samples, with a detection limit of 1 μg/g.

A Century of Sapphire Crystal Growth

DTIC Science & Technology

2004-05-17

should be aware that notwithstanding any other provision of law , no person shall be subject to a penalty for failing to comply with a collection of...and ruby were oxides of the elements aluminum and silicon.1 In 1817, J. L. Gay- Lussac found that pure aluminum oxide (also called alumina) could...thought to consist of Al2O3 and SiO2 •1817: Gay- Lussac : •1840: Rose: Found SiO2 in sapphire is from agate mortar used for grinding •1837-72: Gaudin

Nanoscale Probing of Thermal, Stress, and Optical Fields under Near-Field Laser Heating

PubMed Central

Tang, Xiaoduan; Xu, Shen; Wang, Xinwei

2013-01-01

Micro/nanoparticle induced near-field laser ultra-focusing and heating has been widely used in laser-assisted nanopatterning and nanolithography to pattern nanoscale features on a large-area substrate. Knowledge of the temperature and stress in the nanoscale near-field heating region is critical for process control and optimization. At present, probing of the nanoscale temperature, stress, and optical fields remains a great challenge since the heating area is very small (∼100 nm or less) and not immediately accessible for sensing. In this work, we report the first experimental study on nanoscale mapping of particle-induced thermal, stress, and optical fields by using a single laser for both near-field excitation and Raman probing. The mapping results based on Raman intensity variation, wavenumber shift, and linewidth broadening all give consistent conjugated thermal, stress, and near-field focusing effects at a 20 nm resolution (<λ/26, λ = 32 nm). Nanoscale mapping of near-field effects of particles from 1210 down to 160 nm demonstrates the strong capacity of such a technique. By developing a new strategy for physical analysis, we have de-conjugated the effects of temperature, stress, and near-field focusing from the Raman mapping. The temperature rise and stress in the nanoscale heating region is evaluated at different energy levels. High-fidelity electromagnetic and temperature field simulation is conducted to accurately interpret the experimental results. PMID:23555566

Shaping nanoscale magnetic domain memory in exchange-coupled ferromagnets by field cooling

DOE PAGES

Chesnel, Karine; Safsten, Alex; Rytting, Matthew; ...

2016-06-01

The advance of magnetic nanotechnologies relies on detailed understanding of nanoscale magnetic mechanisms in materials. Magnetic domain memory (MDM), that is, the tendency for magnetic domains to repeat the same pattern during field cycling, is important for magnetic recording technologies. Here we demonstrate MDM in [Co/Pd]/IrMn films, using coherent X-ray scattering. Under illumination, the magnetic domains in [Co/Pd] produce a speckle pattern, a unique fingerprint of their nanoscale configuration. We measure MDM by cross-correlating speckle patterns throughout magnetization processes. When cooled below its blocking temperature, the film exhibits up to 100% MDM, induced by exchange-coupling with the underlying IrMn layer.more » The degree of MDM drastically depends on cooling conditions. If the film is cooled under moderate fields, MDM is high throughout the entire magnetization loop. Lastly, if the film is cooled under nearly saturating field, MDM vanishes, except at nucleation and saturation. Our findings show how to fully control the occurrence of MDM by field cooling.« less

Development of a sapphire optical pressure sensor for high-temperature applications

NASA Astrophysics Data System (ADS)

Mills, David A.; Alexander, Dylan; Subhash, Ghatu; Sheplak, Mark

2014-06-01

This paper presents the fabrication, packaging, and characterization of a sapphire optical pressure sensor for hightemperature applications. Currently available instrumentation poses significant limitations on the ability to achieve realtime, continuous measurements in high-temperature environments such as those encountered in industrial gas turbines and high-speed aircraft. The fiber-optic lever design utilizes the deflection of a circular platinum-coated sapphire diaphragm to modulate the light reflected back to a single send/receive sapphire optical fiber. The 7 mm diameter, 50 μm thick diaphragm is attached using a novel thermocompression bonding process based on spark plasma sintering technology. Bonds using platinum as an intermediate layer are achieved at a temperature of 1200°C with a hold time of 5 min. Initial characterization of the bond interface using a simple tensile test indicates a bond strength in excess of 12 MPa. Analysis of the buckled diaphragm after bonding is also presented. The packaged sensor enables continuous operation up to 900°C. Room-temperature characterization reveals a first resonance of 18.2 kHz, a flat-band sensitivity of -130 dB re 1 V/Pa (0.32 μV/Pa) from 4-20 kHz, a minimum detectable pressure of 3.8 Pa, and a linear response up to 169 dB at 1.9 kHz.

Pseudorotational epitaxy of self-assembled octadecyltrichlorosilane monolayers on sapphire (0001)

DOE PAGES

Steinrück, H. -G.; Magerl, A.; Deutsch, M.; ...

2014-10-06

The structure of octadecyltrichlorosilane self-assembled monolayers (SAMs) on sapphire (0001) was studied by Å-resolution surface-specific x-ray scattering methods. The monolayer was found to consist of three sublayers where the outermost layer corresponds to vertically oriented, closely packed alkyl tails. Laterally, the monolayer is hexagonally packed and exhibits pseudorotational epitaxy to the sapphire, manifested by a broad scattering peak at zero relative azimuthal rotation, with long powderlike tails. The lattice mismatch of ~1% – 3% to the sapphire’s and the different length scale introduced by the lateral Si-O-Si bonding prohibit positional epitaxy. However, the substrate induces an intriguing increase in themore » crystalline coherence length of the SAM’s powderlike crystallites when rotationally aligned with the sapphire’s lattice. As a result, the increase correlates well with the rotational dependence of the separation of corresponding substrate-monolayer lattice sites.« less

Effects of Bias Pulsing on Etching of SiO2 Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks.

PubMed

Kim, Sechan; Choi, Gyuhyun; Chae, Heeyeop; Lee, Nae-Eung

2016-05-01

In order to study the effects of bias pulsing on the etching characteristics of a silicon dioxide (SiO2) layer using multi-level hard mask (MLHM) structures of ArF photoresist/bottom anti-reflected coating/SiO2/amorphous carbon layer (ACL)/SiO2, the effects of bias pulsing conditions on the etch characteristics of a SiO2 layer with an ACL mask pattern in C4F8/CH2F2/O2/Ar etch chemistries were investigated in a dual-frequency capacitively-coupled plasma (CCP) etcher. The effects of the pulse frequency, duty ratio, and pulse-bias power in the 2 MHz low-frequency (LF) power source were investigated in plasmas generated by a 27.12 MHz high-frequency (HF) power source. The etch rates of ACL and SiO2 decreased, but the etch selectivity of SiO2/ACL increased with decreasing duty ratio. When the ACL and SiO2 layers were etched with increasing pulse frequency, no significant change was observed in the etch rates and etch selectivity. With increasing LF pulse-bias power, the etch rate of ACL and SiO2 slightly increased, but the etch selectivity of SiO2/ACL decreased. Also, the precise control of the critical dimension (CD) values with decreasing duty ratio can be explained by the protection of sidewall etching of SiO2 by increased passivation. Pulse-biased etching was successfully applied to the patterning of the nano-scale line and space of SiO2 using an ACL pattern.

Experimental investigation of the reaction between corundum xenocrysts and alkaline basaltic host magma: Constraints on magma residence times of basalt-hosted sapphires

NASA Astrophysics Data System (ADS)

Baldwin, L. C.; Ballhaus, C.

2018-03-01

Megacrystic sapphires (Fe-Ti-rich corundum) of up to 5 cm in size are well known from alkaline mafic rocks from intra-continental rift-related magmatic fields. There is no doubt that these sapphires represent xenocrysts that were trapped from their original lithology by ascending basaltic magmas carrying them to the Earth's surface. Most studies about basalt-hosted sapphires address the question about the origin of the sapphires, but there is hardly any information available about the time the sapphires resided inside the carrier melt. Sapphires are in reaction relationship with basalt and produce spinel coronas at the sapphire-basalt interface, spatially separating the mutually incompatible phases from one another. Assuming isothermal and isobaric conditions of spinel rim formation, the rim-thickness should be a function of the reaction time with the basaltic melt. In this paper, we report time-series experiments aimed at investigating the kinetics of spinel rim formation due to igneous corrosion of corundum. Therefore, we reacted corundum fragments with alkaline basalt powder at 1250 °C and 1GPa, using a Piston Cylinder Apparatus. The width of the spinel rim was used to estimate a residence time. Extrapolating the experimentally derived reaction rates to the thickness of natural spinel rims as described from the Siebengebirge Volcanic Field, Germany, and from Changle, China, we estimated residence times in the order of a few weeks to months.

Rocket Science at the Nanoscale.

PubMed

Li, Jinxing; Rozen, Isaac; Wang, Joseph

2016-06-28

Autonomous propulsion at the nanoscale represents one of the most challenging and demanding goals in nanotechnology. Over the past decade, numerous important advances in nanotechnology and material science have contributed to the creation of powerful self-propelled micro/nanomotors. In particular, micro- and nanoscale rockets (MNRs) offer impressive capabilities, including remarkable speeds, large cargo-towing forces, precise motion controls, and dynamic self-assembly, which have paved the way for designing multifunctional and intelligent nanoscale machines. These multipurpose nanoscale shuttles can propel and function in complex real-life media, actively transporting and releasing therapeutic payloads and remediation agents for diverse biomedical and environmental applications. This review discusses the challenges of designing efficient MNRs and presents an overview of their propulsion behavior, fabrication methods, potential rocket fuels, navigation strategies, practical applications, and the future prospects of rocket science and technology at the nanoscale.

Characteristics of surface acoustic waves in (11\\bar 2 0)ZnO film/ R-sapphire substrate structures

NASA Astrophysics Data System (ADS)

Wang, Yan; Zhang, ShuYi; Xu, Jing; Xie, YingCai; Lan, XiaoDong

2018-02-01

(11\\bar 2 0)ZnO film/ R-sapphire substrate structure is promising for high frequency acoustic wave devices. The propagation characteristics of SAWs, including the Rayleigh waves along [0001] direction and Love waves along [1ī00] direction, are investigated by using 3 dimensional finite element method (3D-FEM). The phase velocity ( v p), electromechanical coupling coefficient ( k 2), temperature coefficient of frequency ( TCF) and reflection coefficient ( r) of Rayleigh wave and Love wave devices are theoretically analyzed. Furthermore, the influences of ZnO films with different crystal orientation on SAW properties are also investigated. The results show that the 1st Rayleigh wave has an exceedingly large k 2 of 4.95% in (90°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate associated with a phase velocity of 5300 m/s; and the 0th Love wave in (0°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate has a maximum k 2 of 3.86% associated with a phase velocity of 3400 m/s. And (11\\bar 2 0)ZnO film/ R-sapphire substrate structures can be used to design temperature-compensated and wide-band SAW devices. All of the results indicate that the performances of SAW devices can be optimized by suitably selecting ZnO films with different thickness and crystal orientations deposited on R-sapphire substrates.

Injection mode-locking Ti-sapphire laser system

DOEpatents

Hovater, James Curtis; Poelker, Bernard Matthew

2002-01-01

According to the present invention there is provided an injection modelocking Ti-sapphire laser system that produces a unidirectional laser oscillation through the application of a ring cavity laser that incorporates no intracavity devices to achieve unidirectional oscillation. An argon-ion or doubled Nd:YVO.sub.4 laser preferably serves as the pump laser and a gain-switched diode laser serves as the seed laser. A method for operating such a laser system to produce a unidirectional oscillating is also described.

On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

DOE Office of Scientific and Technical Information (OSTI.GOV)

Voronenkov, V. V.; Virko, M. V.; Kogotkov, V. S.

The intense absorption of CO{sub 2} laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The threshold density of the laser energy at which n-GaN started to dissociate is 1.6 ± 0.5 J/cm{sup 2}. The mechanical-stress distribution and the surface morphology of GaN films and sapphire substrates before and after laser lift-off are studied by Raman spectroscopy, atomic-force microscopy, and scanning electron microscopy. A verticalmore » Schottky diode with a forward current density of 100 A/cm{sup 2} at a voltage of 2 V and a maximum reverse voltage of 150 V is fabricated on the basis of a 9-μm-thick detached n-GaN film.« less

Optical emission of directly contacted copper/sapphire interface under shock compression of megabar

NASA Astrophysics Data System (ADS)

Hao, G. Y.; Liu, F. S.; Zhang, D. Y.; Zhang, M. J.

2007-06-01

The shock-induced optical emission histories from copper/sapphire interface were measured under two different contact conditions, which simulated the typical situations of pyrometry experiments. Results showed that the "peak" feature of the radiation, previously interpreted as the appearance of so-called high-temperature layer, was nearly diminished by finely polishing and uniformly prepressing technique, and that it is possible to directly measure the equilibrium temperature of bulk metal/window interface. Study also demonstrated that the saturated value of the apparent temperature in nonideal contact situation is related to the color temperature of the shock-induced "bright spot" in sapphire window under megabar pressures.

Template-guided highly aligned, nano-scale wrinkle structure on a large-area

NASA Astrophysics Data System (ADS)

Lim, Jongcheon; Kim, Pilnam

This study presents a novel technique to induce aligned, nano-scale wrinkle on a polysiloxane-based UV curable resin. There have been studies on generating randomized sub-micron wrinkle using oxygen plasma treatment which causes equibiaxial compressive stress on the film surface. Few works have been reported on how to control the surface wrinkle orientation. Currently available approaches for regulating the wrinkle pattern typically require polydimethylsiloxane (PDMS)-based bilayer system under uniaxial stress condition which hampers various technological applications. Here, we demonstrate a method to generate aligned wrinkle with UV curable polymers. Highly regular array of nanoscale wrinkles were formed by elastic buckling of bilayered UV curable resin, resulting from a combination of confinement effect and anchor-guided propagation of structure. The wrinkle tends to align uniformly lateral to the template pattern as the resin filled in the pattern forms more convex meniscus. The wavelength of the wrinkle was controlled by UV exposure time yielding as small as 170nm. From our results, we suggest the confinement provided by the template pattern may have affected the direction of thin film's expansion yielding unidirectional compressive stress. This work was supported by Samsung Research Funding Center of Samsung Electronics under Project Number SRFC-IT1402-02.

Nanoscale Ionic Liquids

DTIC Science & Technology

2006-11-01

Technical Report 11 December 2005 - 30 November 2006 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Nanoscale Ionic Liquids 5b. GRANT NUMBER FA9550-06-1-0012...Title: Nanoscale Ionic Liquids Principal Investigator: Emmanuel P. Giannelis Address: Materials Science and Engineering, Bard Hall, Cornell University...based fluids exhibit high ionic conductivity. The NFs are typically synthesized by grafting a charged, oligomeric corona onto the nanoparticle cores

Suitability of surface acoustic wave oscillators fabricated using low temperature-grown AlN films on GaN/sapphire as UV sensors.

PubMed

Chen, Tzu Chieh; Lin, Yueh Ting; Lin, Chung Yi; Chen, W C; Chen, Meei Ru; Kao, Hui-Ling; Chyi, J I; Hsu, C H

2008-02-01

Epitaxial AlN films were prepared on GaN/sapphire using a helicon sputtering system at the low temperature of 300 degrees C. Surface acoustic wave (SAW) devices fabricated on AlN/GaN/sapphire exhibited superior characteristics compared with those made on GaN/sapphire. An oscillator using an AlN/GaN/sapphirebased SAW device is presented. The oscillation frequency decreased when the device was illuminated by ultraviolet (UV) radiation, and the downshift of the oscillation frequency increased with the illuminating UV power density. The results showed that the AlN/GaN/sapphire-layered structure SAW oscillators are suitable for visible blind UV detection and opened up the feasibility of developing remote UV sensors for different ranges of wavelengths on the III-nitrides.

Temperature and emissivity measurements at the sapphire single crystal fiber growth process

NASA Astrophysics Data System (ADS)

Bufetova, G. A.; Rusanov, S. Ya.; Seregin, V. F.; Pyrkov, Yu. N.; Tsvetkov, V. B.

2017-12-01

We present a new method for evaluation the absorption coefficient of the crystal melt around the phase transition zone for the spectral range of semitransparency. The emissivity distribution across the crystallization front of the sapphire crystal fiber was measured at the quasi-stationary laser heated pedestal growth (LHPG) process (Fejer et al., 1984; Feigelson, 1986) and the data for solid state, melt and phase transition zone (melt-solid interface) were obtained. The sapphire melt absorption coefficient was estimated to be 14 ± 2 cm-1 in the spectral range 1-1.4 μm around the melt point. It is consistent with data, obtained by different other methods. This method can be applied to determine the absorption coefficient for other materials.

Comparing Yb-fiber and Ti:Sapphire lasers for depth resolved imaging of human skin (Conference Presentation)

NASA Astrophysics Data System (ADS)

Balu, Mihaela; Saytashev, Ilyas; Hou, Jue; Dantus, Marcos; Tromberg, Bruce J.

2016-02-01

We report on a direct comparison between Ti:Sapphire and Yb fiber lasers for depth-resolved label-free multimodal imaging of human skin. We found that the penetration depth achieved with the Yb laser was 80% greater than for the Ti:Sapphire. Third harmonic generation (THG) imaging with Yb laser excitation provides additional information about skin structure. Our results indicate the potential of fiber-based laser systems for moving into clinical use.

Generation of continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling of a Ti:sapphire laser.

PubMed

Cha, Yong-Ho; Ko, Kwang-Hoon; Lim, Gwon; Han, Jae-Min; Park, Hyun-Min; Kim, Taek-Soo; Jeong, Do-Young

2010-03-20

We have generated continuous-wave single-frequency 1.5 W 378 nm radiation by frequency doubling a high-power Ti:sapphire laser in an external enhancement cavity. An LBO crystal that is Brewster-cut and antireflection coated on both ends is used for a long-term stable frequency doubling. By optimizing the input coupler's reflectivity, we could generate 1.5 W 378 nm radiation from a 5 W 756 nm Ti:sapphire laser. According to our knowledge, this is the highest CW frequency-doubled power of a Ti:sapphire laser.

Design and performance of an astigmatism-compensated self-mode-locked ring-cavity Ti:sapphire laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, Y.; Dai, J.; Wang, Q.

1996-12-31

Based on the nonlinear ABCD matrix and the renormalized q-parameter for Gaussian-beam propagation, self-focusing in conjunction with a spatial gain profile for self-mode locking in a ring-cavity Ti:sapphire laser is analyzed. In the experiment, an astigmatism-compensated self-mode-locked ring-cavity Ti:sapphire laser is demonstrated, and self-mode-locked operation is achieved in both bidirection and unidirection with pulse durations as short as 36 fs and 32 fs, respectively. The experimental observations are in good agreement with theoretical predictions.

Friction laws at the nanoscale.

PubMed

Mo, Yifei; Turner, Kevin T; Szlufarska, Izabela

2009-02-26

Macroscopic laws of friction do not generally apply to nanoscale contacts. Although continuum mechanics models have been predicted to break down at the nanoscale, they continue to be applied for lack of a better theory. An understanding of how friction force depends on applied load and contact area at these scales is essential for the design of miniaturized devices with optimal mechanical performance. Here we use large-scale molecular dynamics simulations with realistic force fields to establish friction laws in dry nanoscale contacts. We show that friction force depends linearly on the number of atoms that chemically interact across the contact. By defining the contact area as being proportional to this number of interacting atoms, we show that the macroscopically observed linear relationship between friction force and contact area can be extended to the nanoscale. Our model predicts that as the adhesion between the contacting surfaces is reduced, a transition takes place from nonlinear to linear dependence of friction force on load. This transition is consistent with the results of several nanoscale friction experiments. We demonstrate that the breakdown of continuum mechanics can be understood as a result of the rough (multi-asperity) nature of the contact, and show that roughness theories of friction can be applied at the nanoscale.

Microscopic origin of the optical processes in blue sapphire.

PubMed

Bristow, Jessica K; Parker, Stephen C; Catlow, C Richard A; Woodley, Scott M; Walsh, Aron

2013-06-11

Al2O3 changes from transparent to a range of intense colours depending on the chemical impurities present. In blue sapphire, Fe and Ti are incorporated; however, the chemical process that gives rise to the colour has long been debated. Atomistic modelling identifies charge transfer from Ti(III) to Fe(III) as being responsible for the characteristic blue appearance.

Visualization and Analysis of Impact Damage in Sapphire

DTIC Science & Technology

2011-11-01

transparent armor materials like Starphire soda - lime and borosilicate glass [8], fused silica [9] and the transparent polycrystalline ceramic AlON...conventional glass -based armor when a transparent ceramic is used as strike face on a glass -polymer laminate [1, 2, 3]. Sapphire, i.e. single crystal aluminum...materials. Since part of transparent armor consists of brittle materials, the fragmentation of the ceramic and glass layers plays a key role in the

Power amplification for petawatt Ti: Sapphire lasers: New strategies for high fluence pumping

NASA Astrophysics Data System (ADS)

Canova, F.; Chambaret, J.-P.

2006-06-01

One of the major bottlenecks when we pump large Ti:Sapphire crystals, to reach Petawatt level laser amplification, is the careful control of the spatial energy distribution of Nd:Glass pump lasers. Commercially available nanosecond Nd:Glass and Nd:YAG lasers exhibit poor spatial profile quality especially in the near and in the intermediate field, which can lead to local hot spots, responsible of damages in crystals, and parasitic transverse lasing enhancement, strongly dependent on the profile of the pump beam . For these reasons, it is mandatory to keep the pump beam intensity profile as flat as possible on the pumped crystal. To guarantee the best pumping conditions we are investigating the combined use of DOE (diffractive optical elements) and optical smoothing techniques. In parallel we are starting a study on laser induced damages mechanisms in crystal. With DOE and microlens arrays we plan to guarantee to the beam a supergaussian shape. Simulation and first experiments with both optical systems show that a flat top spatial profile with less than 10% fluctuations and a 8th order supergaussian is possible with the present technology.Optical smoothing will keep the beam free of hot spots. We especially focused on the smoothing techniques involving optical fibers. This is the first time to our knowledge that this technique is applied to the pumping beams for Ti:Sapphire systems. A deep study of laser-crystal interaction will allow us to fully understand the damages created by hot spots. The knowledge of the phenomena involved in laser damages on Ti:Sapphire is mandatory to control the pumping processes and thresholds. In conclusion, mixing the advantages of these different approaches to overcome this bottleneck will allow us to amplify in a safety way femtosecond laser beams to the Petawatt level using Ti:Sapphire crystals.

Vanadium-rich ruby and sapphire within Mogok Gemfield, Myanmar: implications for gem color and genesis

NASA Astrophysics Data System (ADS)

Zaw, Khin; Sutherland, Lin; Yui, Tzen-Fu; Meffre, Sebastien; Thu, Kyaw

2015-01-01

Rubies and sapphires are of both scientific and commercial interest. These gemstones are corundum colored by transition elements within the alumina crystal lattice: Cr3+ yields red in ruby and Fe2+, Fe3+, and Ti4+ ionic interactions color sapphires. A minor ion, V3+ induces slate to purple colors and color change in some sapphires, but its role in coloring rubies remains enigmatic. Trace element and oxygen isotope composition provide genetic signatures for natural corundum and assist geographic typing. Here, we show that V can dominate chromophore contents in Mogok ruby suites. This raises implications for their color quality, enhancement treatments, geographic origin, exploration and exploitation and their comparison with rubies elsewhere. Precise LA-ICP-MS analysis of ruby and sapphire from Mogok placer and in situ deposits reveal that V can exceed 5,000 ppm, giving V/Cr, V/Fe and V/Ti ratios up to 26, 78, and 97 respectively. Such values significantly exceed those found elsewhere suggesting a localized geological control on V-rich ruby distribution. Our results demonstrate that detailed geochemical studies of ruby suites reveal that V is a potential ruby tracer, encourage comparisons of V/Cr-variation between ruby suites and widen the scope for geographic typing and genesis of ruby. This will allow more precise comparison of Asian and other ruby fields and assist confirmation of Mogok sources for rubies in historical and contemporary gems and jewelry.

Ga2O3-In2O3 thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity

NASA Astrophysics Data System (ADS)

Muslimov, A. E.; Butashin, A. V.; Kolymagin, A. B.; Nabatov, B. V.; Kanevsky, V. M.

2017-11-01

The structure and electrical and optical properties of β-Ga2O3-In2O3 thin films on sapphire substrates with different orientations have been investigated. The samples have been prepared by annealing of gallium-indium metallic films on sapphire substrates in air at different gallium-to-indium ratios in the initial mixture. The photoconductivity of these structures in the solar-blind ultraviolet spectral region has been examined.

The density and compositional analysis of titanium doped sapphire single crystal grown by the Czocharlski method

NASA Astrophysics Data System (ADS)

Kusuma, H. H.; Ibrahim, Z.; Othaman, Z.

2018-03-01

Titanium doped sapphire (Ti:Al2O3) crystal has attracted attention not only as beautiful gemstones, but also due to their applications as high power laser action. It is very important crystal for tunable solid state laser. Ti:Al2O3 crystals have been success grown using the Czocharlski method with automatic diameter control (ADC) system. The crystals were grown with different pull rates. The structure of the crystal was characterized with X-Ray Diffraction (XRD). The density of the crystal was measurement based on the Archimedes principle and the chemical composition of the crystal was confirmed by the Energy Dispersive X-ray (EDX) Spectroscopy. The XRD patterns of crystals are showed single main peak with a high intensity. Its shows that the samples are single crystal. The Ti:Al2O3 grown with different pull rate will affect the distribution of the concentration of dopant Ti3+ and densities on the sapphire crystals boules as well on the crystal growth process. The increment of the pull rate will increase the percentage distribution of Ti3+ and on the densities of the Ti:Al2O3 crystal boules. This may be attributed to the speed factor of the pull rate of the crystal that then caused changes in the heat flow in the furnace and then causes the homogeneities is changed of species distribution of atoms along crystal.

Simulation and optimization of silicon-on-sapphire pressure sensor

NASA Astrophysics Data System (ADS)

Kulesh, N. A.; Kudyukov, E. V.; Balymov, K. G.; Beloyshov, A. A.

2017-09-01

In this paper, finite element analysis software COMSOL Multiphysics was used to simulate the performance of silicon-on-sapphire piezoresistive pressure sensor, aiming to elaborate a flexible model suitable for further optimization and customization of the currently produced pressure sensors. The base model was built around the cylindrical pressure cell made of titanium alloy having a circular diaphragm with monocrystalline sapphire layer attached. The monocrystalline piezoresistive elements were placed on top of the double-layer diaphragm and electrically connected to form the Wheatstone bridge. Verification of the model and parametric study included three main areas: geometrical parameters of the cell, position of the elements on the diaphragm, and operation at elevated temperature. Optimization of the cell geometry included variation of bossed titanium diaphragm parameters as well as rounding-off radiuses near the edges of the diaphragm. Influence of the temperature was considered separately for thermal expansion of the mechanical components and for the changes of electrical and piezoresistive properties of the piezoresistive elements. In conclusion, the simulation results were compared to the experimental data obtained for three different constructions of the commercial pressure sensors produced by SPA of Automatics named after Academician N.A. Semikhatov.

Distinct crystallinity and orientations of hydroxyapatite thin films deposited on C- and A-plane sapphire substrates

NASA Astrophysics Data System (ADS)

Akazawa, Housei; Ueno, Yuko

2014-10-01

We report how the crystallinity and orientation of hydroxyapatite (HAp) films deposited on sapphire substrates depend on the crystallographic planes. Both solid-phase crystallization of amorphous HAp films and crystallization during sputter deposition at elevated temperatures were examined. The low-temperature epitaxial phase on C-plane sapphire substrates has c-axis orientated HAp crystals regardless of the crystallization route, whereas the preferred orientation switches to the (310) direction at higher temperatures. Only the symmetric stretching mode (ν1) of PO43- units appears in the Raman scattering spectra, confirming well-ordered crystalline domains. In contrast, HAp crystals grown on A-plane sapphire substrates are always oriented toward random orientations. Exhibiting all vibrational modes (ν1, ν3, and ν4) of PO43- units in the Raman scattering spectra reflects random orientation, violating the Raman selection rule. If we assume that Raman intensities of PO43- units represent the crystallinity of HAp films, crystallization terminating the surface with the C-plane is hindered by the presence of excess H2O and OH species in the film, whereas crystallization at random orientations on the A-plane sapphire is rather promoted by these species. Such contrasting behaviors between C-plane and A-plane substrates will reflect surface-plane dependent creation of crystalline seeds and eventually determine the orientation of resulting HAp films.

Epitaxial growth of HfS2 on sapphire by chemical vapor deposition and application for photodetectors

NASA Astrophysics Data System (ADS)

Wang, Denggui; Zhang, Xingwang; Liu, Heng; Meng, Junhua; Xia, Jing; Yin, Zhigang; Wang, Ye; You, Jingbi; Meng, Xiang-Min

2017-09-01

Group IVB transition metal (Zr and Hf) dichalcogenides (TMDs) have been attracting intensive attention as promising candidates in the modern electronic and/or optoelectronic fields. However, the controllable growth of HfS2 monolayers or few layers still remains a great challenge, thus hindering their further applications so far. Here, for the first time we demonstrate the epitaxial growth of high-quality HfS2 with a controlled number of layers on c-plane sapphire substrates by chemical vapor deposition (CVD). The HfS2 layers exhibit an atomically sharp interface with the sapphire substrate, followed by flat, 2D layers with octahedral coordination. The epitaxial relationship between HfS2 and substrate was determined by x-ray diffraction and transmission electron microscopy measurements to be: HfS2 (0 0 0 1) [10-10]||sapphire (0 0 0 1)[1-100]. Moreover, a high-performance photodetector with a high on/off ratio of more than 103 and an ultrafast response rate of 130 µs for the rise and 155 µs for the decay times were fabricated based on the CVD-grown HfS2 layers on sapphire substrates. This simple and controllable approach opens up a new way to produce highly crystalline HfS2 atomic layers, which are promising materials for nanoelectronics.

Bio-Organic Nanotechnology: Using Proteins and Synthetic Polymers for Nanoscale Devices

NASA Technical Reports Server (NTRS)

Molnar, Linda K.; Xu, Ting; Trent, Jonathan D.; Russell, Thomas P.

2003-01-01

While the ability of proteins to self-assemble makes them powerful tools in nanotechnology, in biological systems protein-based structures ultimately depend on the context in which they form. We combine the self-assembling properties of synthetic diblock copolymers and proteins to construct intricately ordered, three-dimensional polymer protein structures with the ultimate goal of forming nano-scale devices. This hybrid approach takes advantage of the capabilities of organic polymer chemistry to build ordered structures and the capabilities of genetic engineering to create proteins that are selective for inorganic or organic substrates. Here, microphase-separated block copolymers coupled with genetically engineered heat shock proteins are used to produce nano-scale patterning that maximizes the potential for both increased structural complexity and integrity.

Highly repeatable nanoscale phase coexistence in vanadium dioxide films

NASA Astrophysics Data System (ADS)

Huffman, T. J.; Lahneman, D. J.; Wang, S. L.; Slusar, T.; Kim, Bong-Jun; Kim, Hyun-Tak; Qazilbash, M. M.

2018-02-01

It is generally believed that in first-order phase transitions in materials with imperfections, the formation of phase domains must be affected to some extent by stochastic (probabilistic) processes. The stochasticity would lead to unreliable performance in nanoscale devices that have the potential to exploit the transformation of physical properties in a phase transition. Here we show that stochasticity at nanometer length scales is completely suppressed in the thermally driven metal-insulator transition (MIT) in sputtered vanadium dioxide (V O2 ) films. The nucleation and growth of domain patterns of metallic and insulating phases occur in a strikingly reproducible way. The completely deterministic nature of domain formation and growth in films with imperfections is a fundamental and unexpected finding about the kinetics of this material. Moreover, it opens the door for realizing reliable nanoscale devices based on the MIT in V O2 and similar phase-change materials.

Design and analysis of large-core single-mode windmill single crystal sapphire optical fiber

DOE PAGES

Cheng, Yujie; Hill, Cary; Liu, Bo; ...

2016-06-01

We present a large-core single-mode “windmill” single crystal sapphire optical fiber (SCSF) design, which exhibits single-mode operation by stripping off the higher-order modes (HOMs) while maintaining the fundamental mode. The “windmill” SCSF design was analyzed using the finite element analysis method, in which all the HOMs are leaky. The numerical simulation results show single-mode operation in the spectral range from 0.4 to 2 μm in the windmill SCSF, with an effective core diameter as large as 14 μm. Such fiber is expected to improve the performance of many of the current sapphire fiber optic sensor structures.

An evaluation method for nanoscale wrinkle

NASA Astrophysics Data System (ADS)

Liu, Y. P.; Wang, C. G.; Zhang, L. M.; Tan, H. F.

2016-06-01

In this paper, a spectrum-based wrinkling analysis method via two-dimensional Fourier transformation is proposed aiming to solve the difficulty of nanoscale wrinkle evaluation. It evaluates the wrinkle characteristics including wrinkling wavelength and direction simply using a single wrinkling image. Based on this method, the evaluation results of nanoscale wrinkle characteristics show agreement with the open experimental results within an error of 6%. It is also verified to be appropriate for the macro wrinkle evaluation without scale limitations. The spectrum-based wrinkling analysis is an effective method for nanoscale evaluation, which contributes to reveal the mechanism of nanoscale wrinkling.

Sapphire reinforced alumina matrix composites

NASA Technical Reports Server (NTRS)

Jaskowiak, Martha H.; Setlock, John A.

1994-01-01

Unidirectionally reinforced A1203 matrix composites have been fabricated by hot pressing. Approximately 30 volume % of either coated or uncoated sapphire fiber was used as reinforcement. Unstabilized ZrO2 was applied as the fiber coating. Composite mechanical behavior was analyzed both after fabrication and after additional heat treatment. The results of composite tensile tests were correlated with fiber-matrix interfacial shear strengths determined from fiber push-out tests. Substantially higher strength and greater fiber pull-out were observed for the coated fiber composites for all processing conditions studied. The coated fiber composites retained up to 95% and 87% of their as-fabricated strength when heat treated at 14000C for 8 or 24 hours, respectively. Electron microscopy analysis of the fracture surfaces revealed extensive fiber pull-out both before and after heat treatment.

Characterization of sapphire: For its material properties at high temperatures

NASA Astrophysics Data System (ADS)

Bal, Harman Singh

There are numerous needs for sensing, one of which is in pressure sensing for high temperature application such as combustion related process and embedded in aircraft wings for reusable space vehicles. Currently, silicon based MEMS technology is used for pressure sensing. However, due to material properties the sensors have a limited range of approximately 600 °C which is capable of being pushed towards 1000 °C with active cooling. This can introduce reliability issues when you add more parts and high flow rates to remove large amounts of heat. To overcome this challenge, sapphire is investigated for optical based pressure transducers at temperatures approaching 1400 °C. Due to its hardness and chemical inertness, traditional cutting and etching methods used in MEMS technology are not applicable. A method that is being investigated as a possible alternative is laser machining using a picosecond laser. In this research, we study the material property changes that occur from laser machining and quantify the changes with the experimental results obtained by testing sapphire at high-temperature with a standard 4-point bending set-up.

Ultrafast third-harmonic generation from textured aluminum nitride-sapphire interfaces

NASA Astrophysics Data System (ADS)

Stoker, D. S.; Baek, J.; Wang, W.; Kovar, D.; Becker, M. F.; Keto, J. W.

2006-05-01

We measured and modeled third-harmonic generation (THG) from an AlN thin film on sapphire using a time-domain approach appropriate for ultrafast lasers. Second-harmonic measurements indicated that polycrystalline AlN contains long-range crystal texture. An interface model for third-harmonic generation enabled an analytical representation of scanning THG ( z -scan) experiments. Using it and accounting for Fresnel reflections, we measured the AlN -sapphire susceptibility ratio and estimated the susceptibility for aluminum nitride, χxxxx(3)(3ω;ω,ω,ω)=1.52±0.25×10-13esu . The third-harmonic (TH) spectrum strongly depended on the laser focus position and sample thickness. The amplitude and phase of the frequency-domain interference were fit to the Fourier transform of the calculated time-domain field to improve the accuracy of several experimental parameters. We verified that the model works well for explaining TH signal amplitudes and spectral phase. Some anomalous features in the TH spectrum were observed, which we attributed to nonparaxial effects.

Endocytosis of Nanoscale Systems for Cancer Treatments.

PubMed

Chen, Kai; Li, Xue; Zhu, Hongyan; Gong, Qiyong; Luo, Kui

2017-04-28

Advances of nanoscale systems for cancer treatment have been involved in enabling highly regulated site-specific localization to sub cellular organelles hidden beneath cell membranes. Thus far, the cellular entry of these nanoscale systems has been not fully understood. Endocytosisis a form of active transport in which cell transports elected extracellular molecules (such as proteins, viruses, micro-organisms and nanoscale systems) are allowed into cell interiors by engulfing them in an energy-dependent process. This process appears at the plasma membrane surface and contains internalization of the cell membrane as well as the membrane proteins and lipids of cell. There are multiform pathways of endocytosis for nanoscale systems. Further comprehension for the mechanisms of endocytosis is achieved with a combination of efficient genetic manipulations, cell dynamic imaging, and chemical endocytosis inhibitors. This review provides an account of various endocytic pathways, itemizes current methods to study endocytosis of nanoscale systems, discusses some factors associated with cellular uptake for nanoscale systems and introduces the trafficking behavior for nanoscale systems with active targeting. An insight into the endocytosis mechanism is urgent and significant for developing safe and efficient nanoscale systems for cancer diagnosis and therapy. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

Electroform replication of smooth mirrors from sapphire masters

NASA Technical Reports Server (NTRS)

Altkorn, R.; Chang, J.; Haidle, R.; Takacs, P. Z.; Ulmer, M. P.

1992-01-01

A sapphire master was used to produce mirrors that exhibit mid-to-high-frequency roughness as low as 3 A. The fabrication procedure and potential applications in X-ray astronomy are discussed. It is shown that foils replicated from flat smooth mandrels should offer at least equivalent HF roughness and significantly lower mid-frequency ripple than those coated with lacquer. A ceramic-surface mandrel could also be expected to last far longer without the need for repolishing than electroless nickel-coated mandrels.

Time dependent temperature distribution in pulsed Ti:sapphire lasers

NASA Technical Reports Server (NTRS)

Buoncristiani, A. Martin; Byvik, Charles E.; Farrukh, Usamah O.

1988-01-01

An expression is derived for the time dependent temperature distribution in a finite solid state laser rod for an end-pumped beam of arbitrary shape. The specific case of end pumping by circular (constant) or Gaussian beam is described. The temperature profile for a single pump pulse and for repetitive pulse operation is discussed. The particular case of the temperature distribution in a pulsed titanium:sapphire rod is considered.

Center for Nanoscale Science and Technology

National Institute of Standards and Technology Data Gateway

NIST Center for Nanoscale Science and Technology (Program website, free access)   Currently there is no database matching your keyword search, but the NIST Center for Nanoscale Science and Technology website may be of interest. The Center for Nanoscale Science and Technology enables science and industry by providing essential measurement methods, instrumentation, and standards to support all phases of nanotechnology development, from discovery to production.

Tip-enhanced ablation and ionization mass spectrometry for nanoscale chemical analysis

PubMed Central

Liang, Zhisen; Zhang, Shudi; Li, Xiaoping; Wang, Tongtong; Huang, Yaping; Hang, Wei; Yang, Zhilin; Li, Jianfeng; Tian, Zhongqun

2017-01-01

Spectroscopic methods with nanoscale lateral resolution are becoming essential in the fields of physics, chemistry, geology, biology, and materials science. However, the lateral resolution of laser-based mass spectrometry imaging (MSI) techniques has so far been limited to the microscale. This report presents the development of tip-enhanced ablation and ionization time-of-flight mass spectrometry (TEAI-TOFMS), using a shell-isolated apertureless silver tip. The TEAI-TOFMS results indicate the capability and reproducibility of the system for generating nanosized craters and for acquiring the corresponding mass spectral signals. Multi-elemental analysis of nine inorganic salt residues and MSI of a potassium salt residue pattern at a 50-nm lateral resolution were achieved. These results demonstrate the opportunity for the distribution of chemical compositions at the nanoscale to be visualized. PMID:29226250

Study on the temperature field of large-sized sapphire single crystal furnace

NASA Astrophysics Data System (ADS)

Zhai, J. P.; Jiang, J. W.; Liu, K. G.; Peng, X. B.; Jian, D. L.; Li, I. L.

2018-01-01

In this paper, the temperature field of large-sized (120kg, 200kg and 300kg grade) sapphire single crystal furnace was simulated. By keeping the crucible diameter ratio and the insulation system unchanged, the power consumption, axial and radial temperature gradient, solid-liquid surface shape, stress distribution and melt flow were studied. The simulation results showed that with the increase of the single crystal furnace size, the power consumption increased, the temperature field insulation effect became worse, the growth stress value increased and the stress concentration phenomenon occurred. To solve these problems, the middle and bottom insulation system should be enhanced during designing the large-sized sapphire single crystal furnace. The appropriate radial and axial temperature gradient was favorable to reduce the crystal stress and prevent the occurrence of cracking. Expanding the interface between the seed and crystal was propitious to avoid the stress accumulation phenomenon.

Nanoscale potentiometry.

PubMed

Bakker, Eric; Pretsch, Ernö

2008-01-01

Potentiometric sensors share unique characteristics that set them apart from other electrochemical sensors. Potentiometric nanoelectrodes have been reported and successfully used for many decades, and we review these developments. Current research chiefly focuses on nanoscale films at the outer or the inner side of the membrane, with outer layers for increasing biocompatibility, expanding the sensor response, or improving the limit of detection (LOD). Inner layers are mainly used for stabilizing the response and eliminating inner aqueous contacts or undesired nanoscale layers of water. We also discuss the ultimate detectability of ions with such sensors and the power of coupling the ultra-low LODs of ion-selective electrodes with nanoparticle labels to give attractive bioassays that can compete with state-of-the-art electrochemical detection.

Liquid-phase growth of few-layered graphene on sapphire substrates using SiC micropowder source

NASA Astrophysics Data System (ADS)

Maruyama, Takahiro; Yamashita, Yutaka; Saida, Takahiro; Tanaka, Shin-ichiro; Naritsuka, Shigeya

2017-06-01

We demonstrated direct synthesis of graphene films consisting of a few layers (few-layered graphene) on sapphire substrates by liquid-phase growth (LPG), using liquid Ga as the melt and SiC micropowder as the source material. When the dissolution temperature was above 700 °C, almost all Si atoms of SiC diffused into the Ga melt and only carbon atoms remained at the interface beneath the liquid Ga. Above 800 °C, X-ray photoelectron spectra showed that most of the remaining carbon was graphitized. When the dissolution temperature was 1000 °C, Raman spectra showed that few-layered graphene films grew on the sapphire substrates.

Fabrication of sapphire-based high performance step-edge HTS Josephson junctions and SQUIDs and their application to scanning SQUID microscopy

NASA Astrophysics Data System (ADS)

Ming, Bin

Josephson junctions are at the heart of any superconductor device applications. A SQUID (Superconducting Quantum Interference Device), which consists of two Josephson junctions, is by far the most important example. Unfortunately, in the case of high-Tc superconductors (HTS), the quest for a robust, flexible, and high performance junction technology is yet far from the end. Currently, the only proven method to make HTS junctions is the SrTiO3(STO)-based bicrystal technology. In this thesis we concentrate on the fabrication of YBCO step-edge junctions and SQUIDs on sapphire. The step-edge method provides complete control of device locations and facilitates sophisticated, high-density layout. We select CeO2 as the buffer layer, as the key step to make device quality YBCO thin films on sapphire. With an "overhang" shadow mask produced by a novel photolithography technique, a steep step edge was fabricated on the CeO2 buffer layer by Ar+ ion milling with optimized parameters for minimum ion beam divergence. The step angle was determined to be in excess of 80° by atomic force microscopy (AFM). Josephson junctions patterned from those step edges exhibited resistively shunted junction (RSJ) like current-voltage characteristics. IcR n values in the 200--500 mV range were measured at 77K. Shapiro steps were observed under microwave irradiation, reflecting the true Josephson nature of those junctions. The magnetic field dependence of the junction Ic indicates a uniform current distribution. These results suggest that all fabrication processes are well controlled and the step edge is relatively straight and free of microstructural defects. The SQUIDs made from the same process exhibit large voltage modulation in a varying magnetic field. At 77K, our sapphire-based step-edge SQUID has a low white noise level at 3muphi0/ Hz , as compared to typically >10muphi0/ Hz from the best bicrystal STO SQUIDS. Our effort at device fabrication is chiefly motivated by the scanning SQUID

Evaluating the Type of Light Transmittance in Mono Crystalline, Poly Crystalline and Sapphire Brackets- An Invitro Spectrofluorometer Study

PubMed Central

Kommi, Pradeep Babu; Kumar, M Senthil; Hanumanth; Venkatesan; Aniruddh; Arvinth; Kumar, Arani Nanda

2016-01-01

Introduction Most of the patients seek orthodontic treatment to improve the smile, which improves the facial profile by means of fixed appliances i.e., brackets and wires. The brackets are of different types like stainless steel and ceramic. Ceramic brackets were considered as aesthetic appliance which was divided into mono-crystalline, polycrystalline and sapphire brackets. The light transmittance might influence the degree of curing adhesive material in mono crystalline, polycrystalline and sapphire brackets. Aim The aim of the present study was to evaluate the translucency and intensity of three different aesthetic brackets (mono crystalline, poly crystalline and sapphire ceramic brackets) and to determine their influence on shear bond strength of the brackets. The adhesive remnant index was also measured after debonding of the brackets from the tooth surface. Materials and Methods Twenty six samples each of monocrystalline, polycrystalline and sapphire brackets (total 78 ceramic brackets) were used for the study. The bracket samples were subjected to optical fluorescence test using spectrofluorometer to measure the intensity of the brackets. Seventy eight extracted premolar teeth were procured and divided into 3 groups. The brackets were then bonded to the tooth using Transbond XT (3M Unitek) light cure composite material and cured with new light cure unit (Light Emitting Diode) of wood pecker company (400-450nm) for 30 seconds, and these samples were subjected to shear bond strength test with Instron Universal Testing Machine (UNITEK-94100) with a load range between 0 to 100 KN with a maximum cross head speed of 0.5mm/min. ARI (Adhesive Remnant Index) scores were evaluated according to Artun and Bergland scoring system using stereomicroscope at 20x magnification. Results The light absorption values obtained from spectrofluorometeric study were 3300000–3500000 cps for group 1 (monocrystalline ceramic brackets), 6000000–6500000 cps for Group 2

Evaluating the Type of Light Transmittance in Mono Crystalline, Poly Crystalline and Sapphire Brackets- An Invitro Spectrofluorometer Study.

PubMed

Mohamed, Jauhar P; Kommi, Pradeep Babu; Kumar, M Senthil; Hanumanth; Venkatesan; Aniruddh; Arvinth; Kumar, Arani Nanda

2016-08-01

Most of the patients seek orthodontic treatment to improve the smile, which improves the facial profile by means of fixed appliances i.e., brackets and wires. The brackets are of different types like stainless steel and ceramic. Ceramic brackets were considered as aesthetic appliance which was divided into mono-crystalline, polycrystalline and sapphire brackets. The light transmittance might influence the degree of curing adhesive material in mono crystalline, polycrystalline and sapphire brackets. The aim of the present study was to evaluate the translucency and intensity of three different aesthetic brackets (mono crystalline, poly crystalline and sapphire ceramic brackets) and to determine their influence on shear bond strength of the brackets. The adhesive remnant index was also measured after debonding of the brackets from the tooth surface. Twenty six samples each of monocrystalline, polycrystalline and sapphire brackets (total 78 ceramic brackets) were used for the study. The bracket samples were subjected to optical fluorescence test using spectrofluorometer to measure the intensity of the brackets. Seventy eight extracted premolar teeth were procured and divided into 3 groups. The brackets were then bonded to the tooth using Transbond XT (3M Unitek) light cure composite material and cured with new light cure unit (Light Emitting Diode) of wood pecker company (400-450nm) for 30 seconds, and these samples were subjected to shear bond strength test with Instron Universal Testing Machine (UNITEK-94100) with a load range between 0 to 100 KN with a maximum cross head speed of 0.5mm/min. ARI (Adhesive Remnant Index) scores were evaluated according to Artun and Bergland scoring system using stereomicroscope at 20x magnification. The light absorption values obtained from spectrofluorometeric study were 3300000-3500000 cps for group 1 (monocrystalline ceramic brackets), 6000000-6500000 cps for Group 2 (polycrystalline ceramic brackets) and 2700000 -3000000 cps for

Nanoscale visualization of electronic properties of AlxGa1-xN/AlyGa1-yN multiple quantum-well heterostructure by spreading resistance microscopy

NASA Astrophysics Data System (ADS)

Sviridov, D. E.; Kozlovsky, V. I.; Rong, X.; Chen, G.; Wang, X.; Jmerik, V. N.; Kirilenko, D. A.; Ivanov, S. V.

2017-01-01

Cross-sectional spreading resistance microscopy has been used to investigate nanoscale variations in electronic properties of an undoped Al0.75Ga0.25N/Al0.95Ga0.05N multiple quantum well (MQW) heterostructure grown by plasma-assisted molecular beam epitaxy on an AlN/c-sapphire template, prepared by metalorganic vapor phase epitaxy. It is found that a current signal from the MQWs can be detected only at a negative sample bias. Moreover, its value changes periodically from one quantum well (QW) to another. Analysis of the current-voltage characteristics of the contacts of a tip with the structure layers showed that periodic contrast of MQWs is the result of fluctuations of the chemical composition of the QWs and the concentration of electrons accumulated in them. Mathematical simulations indicate that this modulation is associated with the periodic fluctuations of an Al-mole fraction in the barrier layers of the structure due to counter gradients of the intensity of Al and Ga molecular fluxes across the surface of a substrate rotating slowly during growth. The nanoscale fluctuations of the current contrast observed along the QW layers are caused, most likely, by the presence of the areas of lateral carrier localization, which originate during the formation of QWs by sub-monolayer digital alloying technique.

Ruby and sapphire from Jegdalek, Afghanistan

USGS Publications Warehouse

Bowersox, G.W.; Foord, E.E.; Laurs, B.M.; Shigley, J.E.; Smith, C.P.

2000-01-01

This study provides detailed mining and gemological information on the Jegdalek deposit, in east-central Afghanistan, which is hosted by elongate beds of corundum-bearing marble. Some facet-grade ruby has been recovered, but most of the material consists of semitransparent pink sapphire of cabochon or carving quality. The most common internal features are dense concentrations of healed and nonhealed fracture planes and lamellar twin planes. Color zoning is common, and calcite, apatite, zircon, mica, iron sulfide minerals, graphite, rutile, aluminum hydroxide, and other minerals are also present in some samples. Although the reserves appear to be large, future potential will depend on the establishment of a stable government and the introduction of modern mining and exploration techniques. ?? 2000 Gemological Institute of America.

Low propagation loss silicon-on-sapphire waveguides for the mid-infrared.

PubMed

Li, Fangxin; Jackson, Stuart D; Grillet, Christian; Magi, Eric; Hudson, Darren; Madden, Steven J; Moghe, Yashodhan; O'Brien, Christopher; Read, Andrew; Duvall, Steven G; Atanackovic, Peter; Eggleton, Benjamin J; Moss, David J

2011-08-01

We report record low loss silicon-on-sapphire nanowires for applications to mid infrared optics. We achieve propagation losses as low as 0.8 dB/cm at λ = 1550 nm, ~1.1 to 1.4 dB/cm at λ = 2080 nm and < 2dB/cm at λ = 5.18 μm.

Removal of Lattice Imperfections that Impact the Optical Quality of Ti:Sapphire using Advanced Magnetorheological Finishing Techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menapace, J A; Schaffers, K I; Bayramian, A J

2007-10-09

Ti:sapphire has become the premier lasing medium material for use in solid-state femtosecond high-peak power laser systems because of its wide wavelength tuning range. With a tuneable range from 680 to 1100 nm, peaking at 800 nm, Ti:sapphire lasing crystals can easily be tuned to the required pump wavelength and provide very high pump brightness due to their good beam quality and high output power of typically several watts. Femtosecond lasers are used for precision cutting and machining of materials ranging from steel to tooth enamel to delicate heart tissue and high explosives. These ultra-short pulses are too brief tomore » transfer heat or shock to the material being cut, which means that cutting, drilling, and machining occur with virtually no damage to surrounding material. Furthermore, these lasers can cut with high precision, making hairline cuts of less than 100 microns in thick materials along a computer-generated path. Extension of laser output to higher energies is limited by the size of the amplification medium. Yields of high quality large diameter crystals have been constrained by lattice distortions that may appear in the boule limiting the usable area from which high quality optics can be harvested. Lattice distortions affect the transmitted wavefront of these optics which ultimately limits the high-end power output and efficiency of the laser system, particularly when operated in multi-pass mode. To make matters even more complicated, Ti:sapphire is extremely hard (Mohs hardness of 9 with diamond being 10) which makes it extremely difficult to accurately polish using conventional methods without subsurface damage or significant wavefront error. In this presentation, we demonstrate for the first time that Magnetorheological finishing (MRF) can be used to compensate for the lattice distortions in Ti:sapphire by perturbing the transmitted wavefront. The advanced MRF techniques developed allow for precise polishing of the optical inverse of lattice

MPS Li-Ion Batteries Qualified to Fly on Canadian Sapphire Spacecraft

NASA Astrophysics Data System (ADS)

Remy, S.; Carre, A.; Kimber, R.; Alcindor, P.; Krabel, E.

2014-08-01

Saft Li-ion 8S3P MPS (Medium Prismatic cell for Space Battery) autonomous battery has been designed and qualified primarily to meet LEO power requirements. It has been available for more than 8 years, the original battery concept qualification program being successfully carried-out with CNES support in year 2005. This module has been selected for the first time by the UK satellite manufacturer SSTL for the Sapphire spacecraft platform, on behalf of the spacecraft prime MDA Systems Ltd (MDA) and customer the Canadian DND. Due to the high mechanical load demand in the specifications, a delta qualification campaign was launched to make sure that the MPS battery was able to cope with this requirement. A partner approach between Saft and SSTL led Saft to build some dedicated representative 5S packs, which have been step by step tested by SSTL shaker. Based on the results, the battery was made and finally installed inside the Sapphire spacecraft which was successfully launched on February 25th 2013 after battery storage of about 3.5 years.

Stress generated modifications of epitaxial ferroelectric SrTiO3 films on sapphire

NASA Astrophysics Data System (ADS)

Hollmann, E.; Schubert, J.; Kutzner, R.; Wördenweber, R.

2009-06-01

The effect of lattice-mismatch induced stress upon the crystallographic structure, strain, strain relaxation, and the generation of different types of defects in heteroepitaxially grown SrTiO3 films on CeO2 buffered sapphire is examined. Depending on the thickness of the SrTiO3 layer, characteristic changes in the structural perfection of the layers, their crystallographic orientation with respect to the substrate system, and their strain is observed. For thin films misfit dislocations partially compensate the stress in the SrTiO3 layer, whereas cracks develop in thicker SrTiO3 films. The cracks are orientated along two predominant crystallographic orientations of the sapphire. The structural modifications and the formation of misfit defects and cracks are explained in a model based on lattice misfit induced stress, on the one hand, and energy considerations taking into account the stress release due to crack formation and the energy necessary for the formation of new surfaces at the crack, on the other hand. The impact of lattice misfit is discussed in two steps, i.e., intrinsic and thermal induced misfits during heteroepitaxial film growth at a given temperature and the subsequent cooling of the sample, respectively. The comparison of the theoretical predictions and the experimental observations demonstrate that intrinsic mismatch and thermal mismatch have to be considered in order to explain strain dependent effects in complex heteroepitaxial layer systems such as induced ferroelectricity of SrTiO3 on sapphire.

Photonics of 2D gold nanolayers on sapphire surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V.; Nabatov, B. V.

Gold layers with thicknesses of up to several nanometers, including ordered and disordered 2D nanostructures of gold particles, have been formed on sapphire substrates; their morphology is described; and optical investigations are carried out. The possibility of increasing the accuracy of predicting the optical properties of gold layers and 2D nanostructures using quantum-mechanical models based on functional density theory calculation techniques is considered. The application potential of the obtained materials in photonics is estimated.

A Completely Solid-State Tunable Ti:Sapphire Laser System

NASA Technical Reports Server (NTRS)

Guerra, David V.; Coyle, D. Barry; Krebs, Danny J.

1994-01-01

Compact, completely solid-state tunable pulsed laser system passively cooled developed for potential employment in aircraft and sounding-rocket lidar experiments. Ti:sapphire based laser system pumped with frequency-doubled diode-pumped Nd:YAG. Rugged, self-contained system extremely flexible and provides pulsed output at specific frequencies with low input-power requirements. In-situ measurements enables scientists to study upper-atmosphere dynamics. Tuning range easily extended to bands between 650-950 nm in order to study other atmospheric constituents.

Nanoscale integration is the next frontier for nanotechnology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Picraux, Samuel T

2009-01-01

Nanoscale integration of materials and structures is the next critical step to exploit the promise of nanomaterials. Many novel and fascinating properties have been revealed for nanostructured materials. But if nanotechnology is to live up to its promise we must incorporate these nanoscale building blocks into functional systems that connect to the micro- and macroscale world. To do this we will inevitably need to understand and exploit the resulting combined unique properties of these integrated nanosystems. Much science waits to be discovered in the process. Nanoscale integration extends from the synthesis and fabrication of individual nanoscale building blocks, to themore » assembly of these building blocks into composite structures, and finally to the formation of complex functional systems. As illustrated in Figure 1, the building blocks may be homogeneous or heterogeneous, the composite materials may be nanocomposite or patterned structures, and the functional systems will involve additional combinations of materials. Nanoscale integration involves assembling diverse nanoscale materials across length scales to design and achieve new properties and functionality. At each stage size-dependent properties, the influence of surfaces in close proximity, and a multitude of interfaces all come into play. Whether the final system involves coherent electrons in a quantum computing approach, the combined flow of phonons and electrons for a high efficiency thermoelectric micro-generator, or a molecular recognition structure for bio-sensing, the combined effects of size, surface, and interface will be critical. In essence, one wants to combine the novel functions available through nanoscale science to achieve unique multi-functionalities not available in bulk materials. Perhaps the best-known example of integration is that of combining electronic components together into very large scale integrated circuits (VLSI). The integrated circuit has revolutionized electronics

Dynamic Control over the Optical Transmission of Nanoscale Dielectric Metasurface by Alkali Vapors.

PubMed

Bar-David, Jonathan; Stern, Liron; Levy, Uriel

2017-02-08

In recent years, dielectric and metallic nanoscale metasurfaces are attracting growing attention and are being used for variety of applications. Resulting from the ability to introduce abrupt changes in optical properties at nanoscale dimensions, metasurfaces enable unprecedented control over light's different degrees of freedom, in an essentially two-dimensional configuration. Yet, the dynamic control over metasurface properties still remains one of the ultimate goals of this field. Here, we demonstrate the optical resonant interaction between a form birefringent dielectric metasurface made of silicon and alkali atomic vapor to control and effectively tune the optical transmission pattern initially generated by the nanoscale dielectric metasurface. By doing so, we present a controllable metasurface system, the output of which may be altered by applying magnetic fields, changing input polarization, or shifting the optical frequency. Furthermore, we also demonstrate the nonlinear behavior of our system taking advantage of the saturation effect of atomic transition. The demonstrated approach paves the way for using metasurfaces in applications where dynamic tunability of the metasurface is in need, for example, for scanning systems, tunable focusing, real time displays, and more.

NANOSCALE BIOSENSORS IN ECOSYSTEM EXPOSURE RESEARCH

EPA Science Inventory

This powerpoint presentation presented information on nanoscale biosensors in ecosystem exposure research. The outline of the presentation is as follows: nanomaterials environmental exposure research; US agencies involved in nanosensor research; nanoscale LEDs in biosensors; nano...

Electrically controlled lens and prism using nanoscale polymer-dispersed and polymer-networked liquid crystals

NASA Astrophysics Data System (ADS)

Fan, Yun Hsing; Ren, Hongwen; Wu, Shin Tson

2004-05-01

Inhomogeneous nanoscale polymer-dispersed liquid crystal (PDLC) devices having gradient nanoscale droplet distribution were fabricated. This gradient refractive index nanoscale (GRIN) PDLC film was obtained by exposing the LC/ monomer with a uniform ultraviolet (UV) light through a patterned photomask. The monomer and LC were mixed at 70: 30 wt% ratio. The area exposed to a weaker UV intensity would produce a larger droplet size, and vice versa. Owing to the nanoscale LC droplets involved, the GRIN PDLC devices are highly transparent in the whole visible region. The gradient refractive index profile can be used as switchable prism gratings, Fresnel lens, and positive and negative lenses with tunable focal lengths. Such a GRIN PDLC device is a broadband device and independent of light polarization. The diffraction efficiency of the lens is controllable by the applied voltage. The major advantages of the GRIN PDLC devices are in simple fabrication process, polarization-independent, and fast switching speed, although the required driving voltage is higher than 100 Vrms. To lower the driving voltage, the technique of polymer-networked liquid crystal (PNLC) has been developed. The PNLC was also produced by exposing the LC/monomer mixture with a uniform UV light through a patterned photomask. However, the monomer concentration in PNLC is only around 2-5 wt%. The formed PNLC structure exhibits a gradient polymer network distribution. The LC in the regions stabilized by a higher polymer concentration exhibits a higher threshold voltage. By using this technique, prism grating, tunable electronic lens and Fresnel lens have been demonstrated. The driving voltage is around 10 Vrms. A drawback of this kind of device is polarization dependence. To overcome the polarization dependence, stacking two orthogonal homogeneous PNLC lens is considered.

Numerical investigation of thermal and residual stress of sapphire during c-axis vertical Bridgman growth process considering the solidification history effect

NASA Astrophysics Data System (ADS)

Hwang, Ji Hoon; Lee, Young Cheol; Lee, Wook Jin

2018-01-01

Sapphire single crystals have been highlighted for epitaxial of gallium nitride films in high-power laser and light emitting diode industries. In this study, the evolution of thermally induced stress in sapphire during the vertical Bridgman crystal growth process was investigated using a finite element model that simplified the real Bridgman process. A vertical Bridgman process of cylindrical sapphire crystal with a diameter of 50 mm was considered for the model. The solidification history effect during the growth was modeled by the quite element technique. The effects of temperature gradient, seeding interface shape and seeding position on the thermal stress during the process were discussed based on the finite element analysis results.

Kilohertz Pulse Repetition Frequency Slab Ti:sapphire Lasers with High Average Power (10 W)

NASA Astrophysics Data System (ADS)

Wadsworth, William J.; Coutts, David W.; Webb, Colin E.

1999-11-01

High-average-power broadband 780-nm slab Ti:sapphire lasers, pumped by a kilohertz pulse repetition frequency copper vapor laser (CVL), were demonstrated. These lasers are designed for damage-free power scaling when pumped by CVL s configured for maximum output power (of order 100 W) but with poor beam quality ( M 2 300 ). A simple Brewster-angled slab laser side pumped by a CVL produced 10-W average power (1.25-mJ pulses at 8 kHz) with 4.2-ns FWHM pulse duration at an absolute efficiency of 15% (68-W pump power). Thermal lensing in the Brewster slab laser resulted in multitransverse mode output, and pump absorption was limited to 72% by the maximum doping level for commercially available Ti:sapphire (0.25%). A slab laser with a multiply folded zigzag path was therefore designed and implemented that produced high-beam-quality (TEM 00 -mode) output when operated with cryogenic cooling and provided a longer absorption path for the pump. Excessive scattering of the Ti:sapphire beam at the crystal surfaces limited the efficiency of operation for the zigzag laser, but fluorescence diagnostic techniques, gain measurement, and modeling suggest that efficient power extraction ( 15 W TEM 00 , 23% efficiency) from this laser would be possible for crystals with an optical quality surface polish.

Structural characteristics of a non-polar ZnS layer on a ZnO buffer layer formed on a sapphire substrate by mist chemical vapor deposition

NASA Astrophysics Data System (ADS)

Okita, Koshi; Inaba, Katsuhiko; Yatabe, Zenji; Nakamura, Yusui

2018-06-01

ZnS is attractive as a material for low-cost light-emitting diodes. In this study, a non-polar ZnS layer was epitaxially grown on a sapphire substrate by inserting a ZnO buffer layer between ZnS and sapphire. The ZnS and ZnO layers were grown by a mist chemical vapor deposition system with a simple setup operated under atmospheric pressure. The sample was characterized by high-resolution X-ray diffraction measurements including 2θ/ω scans, rocking curves, and reciprocal space mapping. The results showed that an m-plane wurtzite ZnS layer grew epitaxially on an m-plane wurtzite ZnO buffer layer formed on the m-plane sapphire substrate to provide a ZnS/ZnO/sapphire structure.

High-temperature sapphire optical sensor fiber coatings

NASA Astrophysics Data System (ADS)

Desu, Seshu B.; Claus, Richard O.; Raheem, Ruby; Murphy, Kent A.

1990-10-01

the filter. These modes may be attributed to a number of material degradation mechanisms, such as thermal shock, oxidation corrosion of the material, mechanical loads, or phase changes in the filter material. Development of high temperature optical fiber (sapphire) sensors embedded in the CXF filters would be very valuable for both monitoring the integrity of the filter during its use and understanding the mechanisms of degradation such that durable filter development will be facilitated. Since the filter operating environment is very harsh, the high temperature sapphire optical fibers need to be protected and for some sensing techniques the fiber must also be coated with low refractive index film (cladding). The objective of the present study is to identify materials and develop process technologies for the application of claddings and protective coatings that are stable and compatible with sapphire fibers at both high temperatures and pressures.

Electrical and structural investigations, and ferroelectric domains in nanoscale structures

NASA Astrophysics Data System (ADS)

Alexe, Marin

2005-03-01

Generally speaking material properties are expected to change as the characteristic dimension of a system approaches at the nanometer scale. In the case of ferroelectric materials fundamental problems such as the super-paraelectric limit, influence of the free surface and/or of the interface and bulk defects on ferroelectric switching, etc. arise when scaling the systems into the sub-100 nm range. In order to study these size effects, fabrication methods of high quality nanoscale ferroelectric crystals as well as AFM-based investigations methods have been developed in the last few years. The present talk will briefly review self-patterning and self- assembly fabrication methods, including chemical routes, morphological instability of ultrathin films, and self-assembly lift-off, employed up to the date to fabricate ferroelectric nanoscale structures with lateral size in the range of few tens of nanometers. Moreover, in depth structural and electrical investigations of interfaces performed to differentiate between intrinsic and extrinsic size effects will be also presented.

Measurements of stiff-material compliance on the nanoscale using ultrasonic force microscopy

NASA Astrophysics Data System (ADS)

Dinelli, F.; Biswas, S. K.; Briggs, G. A. D.; Kolosov, O. V.

2000-05-01

Ultrasonic force microscopy (UFM) was introduced to probe nanoscale mechanical properties of stiff materials. This was achieved by vibrating the sample far above the first resonance of the probing atomic force microscope cantilever where the cantilever becomes dynamically rigid. By operating UFM at different set force values, it is possible to directly measure the absolute values of the tip-surface contact stiffness. From this an evaluation of surface elastic properties can be carried out assuming a suitable solid-solid contact model. In this paper we present curves of stiffness as a function of the normal load in the range of 0-300 nN. The dependence of stiffness on the relative humidity has also been investigated. Materials with different elastic constants (such as sapphire lithium fluoride, and silicon) have been successfully differentiated. Continuum mechanics models cannot however explain the dependence of stiffness on the normal force and on the relative humidity. In this high-frequency regime, it is likely that viscous forces might play an important role modifying the tip-surface interaction. Plastic deformation might also occur due to the high strain rates applied when ultrasonically vibrating the sample. Another possible cause of these discrepancies might be the presence of water in between the two bodies in contact organizing in a solidlike way and partially sustaining the load.

Enhanced tunability of magnetron sputtered Ba0.5Sr0.5TiO3 thin films on c-plane sapphire substrates

NASA Astrophysics Data System (ADS)

Fardin, E. A.; Holland, A. S.; Ghorbani, K.; Reichart, P.

2006-07-01

Thin films of Ba0.5Sr0.5TiO3 (BST) were deposited on c-plane (0001) sapphire by rf magnetron sputtering and investigated by complementary materials analysis methods. Microwave properties of the films, including tunability and Q factor were measured from 1to20GHz by patterning interdigital capacitors (IDCs) on the film surface. The tunability is correlated with texture, strain, and grain size in the deposited films. An enhanced capacitance tunability of 56% at a bias field of 200kV/cm and total device Q of more than 15 (up to 20GHz) were achieved following postdeposition annealing at 900°C.

Numerical Study of Damage Propagation and Dynamic Fracture in Sapphire

DTIC Science & Technology

2016-08-30

NOTICES Disclaimers The findings in this report are not to be construed as an official Department of the Army position unless so...package by using three- dimensional, 180 degrees (reflective) modeling and simulation. This study reports on the ability and the modification of...existing strength and failure material models of Al2O3 to be used as sapphire models for duplication of the experimental fracture and wave propagation in

Crystal front shape control by use of an additional heater in a Czochralski sapphire single crystal growth system

NASA Astrophysics Data System (ADS)

Hur, Min-Jae; Han, Xue-Feng; Choi, Ho-Gil; Yi, Kyung-Woo

2017-09-01

The quality of sapphire single crystals used as substrates for LED production is largely influenced by two defects: dislocation density and bubbles trapped in the crystal. In particular, the dislocation density has a higher value in sapphire grown by the Czochralski (CZ) method than by other methods. In the present study, we predict a decreased value for the convexity and thermal gradient at the crystal front (CF) through the use of an additional heater in an induction-heated CZ system. In addition, we develop a solute concentration model by which the location of bubble formation in CZ growth is calculated, and the results are compared with experimental results. We further calculate the location of bubble entrapment corresponding with the use of an additional heater. We find that sapphire crystal growth with an additional heater yields a decreased thermal gradient at the CF, together with decreased CF convexity, improved energy efficiency, and improvements in terms of bubble formation location.

Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations

NASA Astrophysics Data System (ADS)

Hong, Xia

2016-03-01

Combining the nonvolatile, locally switchable polarization field of a ferroelectric thin film with a nanoscale electronic material in a field effect transistor structure offers the opportunity to examine and control a rich variety of mesoscopic phenomena and interface coupling. It is also possible to introduce new phases and functionalities into these hybrid systems through rational design. This paper reviews two rapidly progressing branches in the field of ferroelectric transistors, which employ two distinct classes of nanoscale electronic materials as the conducting channel, the two-dimensional (2D) electron gas graphene and the strongly correlated transition metal oxide thin films. The topics covered include the basic device physics, novel phenomena emerging in the hybrid systems, critical mechanisms that control the magnitude and stability of the field effect modulation and the mobility of the channel material, potential device applications, and the performance limitations of these devices due to the complex interface interactions and challenges in achieving controlled materials properties. Possible future directions for this field are also outlined, including local ferroelectric gate control via nanoscale domain patterning and incorporating other emergent materials in this device concept, such as the simple binary ferroelectrics, layered 2D transition metal dichalcogenides, and the 4d and 5d heavy metal compounds with strong spin-orbit coupling.

Study on effect of the surface variation of colloidal silica abrasive during chemical mechanical polishing of sapphire

NASA Astrophysics Data System (ADS)

Bun-Athuek, Natthaphon; Yoshimoto, Yutaka; Sakai, Koya; Khajornrungruang, Panart; Suzuki, Keisuke

2017-07-01

The surface and diameter size variations of colloidal silica particles during the chemical mechanical polishing (CMP) of sapphire substrates were investigated using different particle diameters of 20 and 55 nm. Dynamic light scattering (DLS) results show that the silica particles became larger after CMP under both conditions. The increase in particle size in the slurry was proportional to the material removal amount (MRA) as a function of the removed volume of sapphire substrates by CMP and affected the material removal rate (MRR). Transmission electron microscopy (TEM) images revealed an increase in the size of the fine particles and a change in their surface shape in the slurry. The colloidal silica was coated with the material removed from the substrate during CMP. In this case, the increase in the size of 55 nm diameter particles is larger than that of 20 nm diameter particles. X-ray fluorescence spectrometry (XRF) results indicate that the aluminum element from polished sapphire substrates adhered to the surfaces of silica particles. Therefore, MRR decreases with increasing of polishing time owing to the degradation of particles in the slurry.

Te Monolayer-Driven Spontaneous van der Waals Epitaxy of Two-dimensional Pnictogen Chalcogenide Film on Sapphire.

PubMed

Hwang, Jae-Yeol; Kim, Young-Min; Lee, Kyu Hyoung; Ohta, Hiromichi; Kim, Sung Wng

2017-10-11

Demands on high-quality layer structured two-dimensional (2D) thin films such as pnictogen chalcogenides and transition metal dichalcogenides are growing due to the findings of exotic physical properties and potentials for device applications. However, the difficulties in controlling epitaxial growth and the unclear understanding of van der Waals epitaxy (vdWE) for a 2D chalcogenide film on a three-dimensional (3D) substrate have been major obstacles for the further advances of 2D materials. Here, we exploit the spontaneous vdWE of a high-quality 2D chalcogenide (Bi 0.5 Sb 1.5 Te 3 ) film by the chalcogen-driven surface reconstruction of a conventional 3D sapphire substrate. It is verified that the in situ formation of a pseudomorphic Te atomic monolayer on the surface of sapphire, which results in a dangling bond-free surface, allows the spontaneous vdWE of 2D chalcogenide film. Since this route uses the natural surface reconstruction of sapphire with chalcogen under vacuum condition, it can be scalable and easily utilized for the developments of various 2D chalcogenide vdWE films through conventional thin-film fabrication technologies.

Si nanowire growth on sapphire: Classical incubation, reverse reaction, and steady state supersaturation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shakthivel, Dhayalan; Rathkanthiwar, Shashwat; Raghavan, Srinivasan, E-mail: sraghavan@cense.iisc.ernet.in

2015-04-28

Si nanowire growth on sapphire substrates by the vapor-liquid-solid (VLS) method using Au catalyst particles has been studied. Sapphire was chosen as the substrate to ensure that the vapor phase is the only source of Si. Three hitherto unreported observations are described. First, an incubation period of 120–480 s, which is shown to be the incubation period as defined in classical nucleation theory, is reported. This incubation period permits the determination of a desolvation energy of Si from Au-Si alloys of 15 kT. Two, transmission electron microscopy studies of incubation, point to Si loss by reverse reaction as an important partmore » of the mechanism of Si nanowire growth by VLS. Three, calculations using these physico-chemical parameters determined from incubation and measured steady state growth rates of Si nanowires show that wire growth happens from a supersaturated catalyst droplet.« less

Nanoscale chemical mapping of laser-solubilized silk

NASA Astrophysics Data System (ADS)

Ryu, Meguya; Kobayashi, Hanae; Balčytis, Armandas; Wang, Xuewen; Vongsvivut, Jitraporn; Li, Jingliang; Urayama, Norio; Mizeikis, Vygantas; Tobin, Mark; Juodkazis, Saulius; Morikawa, Junko

2017-11-01

A water soluble amorphous form of silk was made by ultra-short laser pulse irradiation and detected by nanoscale IR mapping. An optical absorption-induced nanoscale surface expansion was probed to yield the spectral response of silk at IR molecular fingerprinting wavelengths with a high  ˜ 20 nm spatial resolution defined by the tip of the probe. Silk microtomed sections of 1-5 μm in thickness were prepared for nanoscale spectroscopy and a laser was used to induce amorphisation. Comparison of silk absorbance measurements carried out by table-top and synchrotron Fourier transform IR spectroscopy proved that chemical imaging obtained at high spatial resolution and specificity (able to discriminate between amorphous and crystalline silk) is reliably achieved by nanoscale IR. Differences in absorbance and spectral line-shapes of the bands are related to the different sensitivity of the applied methods to real and imaginary parts of permittivity. A nanoscale material characterization by combining synchrotron IR radiation and nano-IR is discussed.

Nanoscale phase change memory materials.

PubMed

Caldwell, Marissa A; Jeyasingh, Rakesh Gnana David; Wong, H-S Philip; Milliron, Delia J

2012-08-07

Phase change memory materials store information through their reversible transitions between crystalline and amorphous states. For typical metal chalcogenide compounds, their phase transition properties directly impact critical memory characteristics and the manipulation of these is a major focus in the field. Here, we discuss recent work that explores the tuning of such properties by scaling the materials to nanoscale dimensions, including fabrication and synthetic strategies used to produce nanoscale phase change memory materials. The trends that emerge are relevant to understanding how such memory technologies will function as they scale to ever smaller dimensions and also suggest new approaches to designing materials for phase change applications. Finally, the challenges and opportunities raised by integrating nanoscale phase change materials into switching devices are discussed.

Fabrication of complex nanoscale structures on various substrates

NASA Astrophysics Data System (ADS)

Han, Kang-Soo; Hong, Sung-Hoon; Lee, Heon

2007-09-01

Polymer based complex nanoscale structures were fabricated and transferred to various substrates using reverse nanoimprint lithography. To facilitate the fabrication and transference of the large area of the nanostructured layer to the substrates, a water-soluble polyvinyl alcohol mold was used. After generation and transference of the nanostructured layer, the polyvinyl alcohol mold was removed by dissolving in water. A residue-free, UV-curable, glue layer was formulated and used to bond the nanostructured layer onto the substrates. As a result, nanometer scale patterned polymer layers were bonded to various substrates and three-dimensional nanostructures were also fabricated by stacking of the layers.

High-T(sub c) Edge-geometry SNS Weak Links on Silicon-on-sapphire Substrates

NASA Technical Reports Server (NTRS)

Hunt, B.; Foote, M.; Pike, W.; Barner, J.; Vasquez, R.

1994-01-01

High-quality superconductor/normal-metal/superconductor(SNS) edge-geometry weak links have been produced on silicon-on-sapphire (SOS) substrates using a new SrTiO(sub 3)/'seed layer'/cubic-zirconia (YS2) buffer system.

Fundamentals of Nanoscale Polymer–Protein Interactions and Potential Contributions to Solid-State Nanobioarrays

PubMed Central

2015-01-01

Protein adsorption onto polymer surfaces is a very complex, ubiquitous, and integrated process, impacting essential areas of food processing and packaging, health devices, diagnostic tools, and medical products. The nature of protein–surface interactions is becoming much more complicated with continuous efforts toward miniaturization, especially for the development of highly compact protein detection and diagnostic devices. A large body of literature reports on protein adsorption from the perspective of ensemble-averaged behavior on macroscopic, chemically homogeneous, polymeric surfaces. However, protein–surface interactions governing the nanoscale size regime may not be effectively inferred from their macroscopic and microscopic characteristics. Recently, research efforts have been made to produce periodically arranged, nanoscopic protein patterns on diblock copolymer surfaces solely through self-assembly. Intriguing protein adsorption phenomena are directly probed on the individual biomolecule level for a fundamental understanding of protein adsorption on nanoscale surfaces exhibiting varying degrees of chemical heterogeneity. Insight gained from protein assembly on diblock copolymers can be effectively used to control the surface density, conformation, orientation, and biofunctionality of prebound proteins in highly miniaturized applications, now approaching the nanoscale. This feature article will highlight recent experimental and theoretical advances made on these fronts while focusing on single-biomolecule-level investigations of protein adsorption behavior combined with surface chemical heterogeneity on the length scale commensurate with a single protein. This article will also address advantages and challenges of the self-assembly-driven patterning technology used to produce protein nanoarrays and its implications for ultrahigh density, functional, and quantifiable protein detection in a highly miniaturized format. PMID:24456577

Fundamentals of nanoscale polymer-protein interactions and potential contributions to solid-state nanobioarrays.

PubMed

Hahm, Jong-in

2014-08-26

Protein adsorption onto polymer surfaces is a very complex, ubiquitous, and integrated process, impacting essential areas of food processing and packaging, health devices, diagnostic tools, and medical products. The nature of protein-surface interactions is becoming much more complicated with continuous efforts toward miniaturization, especially for the development of highly compact protein detection and diagnostic devices. A large body of literature reports on protein adsorption from the perspective of ensemble-averaged behavior on macroscopic, chemically homogeneous, polymeric surfaces. However, protein-surface interactions governing the nanoscale size regime may not be effectively inferred from their macroscopic and microscopic characteristics. Recently, research efforts have been made to produce periodically arranged, nanoscopic protein patterns on diblock copolymer surfaces solely through self-assembly. Intriguing protein adsorption phenomena are directly probed on the individual biomolecule level for a fundamental understanding of protein adsorption on nanoscale surfaces exhibiting varying degrees of chemical heterogeneity. Insight gained from protein assembly on diblock copolymers can be effectively used to control the surface density, conformation, orientation, and biofunctionality of prebound proteins in highly miniaturized applications, now approaching the nanoscale. This feature article will highlight recent experimental and theoretical advances made on these fronts while focusing on single-biomolecule-level investigations of protein adsorption behavior combined with surface chemical heterogeneity on the length scale commensurate with a single protein. This article will also address advantages and challenges of the self-assembly-driven patterning technology used to produce protein nanoarrays and its implications for ultrahigh density, functional, and quantifiable protein detection in a highly miniaturized format.

"You Hafta Push": Using Sapphire's Novel to Teach Introduction to American Government

ERIC Educational Resources Information Center

Pappas, Christine

2007-01-01

Using fiction in the classroom can dramatize public policy issues and political science concepts, therefore, making them more real and relevant to students. Sapphire's 1996 novel "Push" puts a face on welfare, rape, incest, child abuse, educational inequalities, homophobia, and AIDS. I also use this novel to discuss the public policy process,…

Phase formation and strain relaxation of Ga2O3 on c-plane and a-plane sapphire substrates as studied by synchrotron-based x-ray diffraction

NASA Astrophysics Data System (ADS)

Cheng, Zongzhe; Hanke, Michael; Vogt, Patrick; Bierwagen, Oliver; Trampert, Achim

2017-10-01

Heteroepitaxial Ga2O3 was deposited on c-plane and a-plane oriented sapphire by plasma-assisted molecular beam epitaxy and probed by ex-situ and in-situ synchrotron-based x-ray diffraction. The investigation on c-plane sapphire determined a critical thickness of around 33 Å, at which the monoclinic β-phase forms on top of the hexagonal α-phase. A 143 Å thick single phase α-Ga2O3 was observed on a-plane sapphire, much thicker than the α-Ga2O3 on c-plane sapphire. The α-Ga2O3 relaxed very fast in the first 30 Å in both out-of-plane and in-plane directions as measured by the in-situ study.

Rhombohedral Super Hetero Epitaxy of Cubic SiGe on Trigonal c-plane Sapphire

NASA Technical Reports Server (NTRS)

Choi, Sang H.; Duzik, Adam J.

2017-01-01

New rhombohedral super-hetero-epitaxy technology was developed at NASA. This epitaxy technology enables the growth of unprecedented cubic-trigonal hybrid single crystal structures with lattice match on sapphire (Al2O3) substrates, hence with little strain and very few defects at the interface.

Fabrication of ordered arrays of micro- and nanoscale features with control over their shape and size via templated solid-state dewetting.

PubMed

Ye, Jongpil

2015-05-08

Templated solid-state dewetting of single-crystal films has been shown to be used to produce regular patterns of various shapes. However, the materials for which this patterning method is applicable, and the size range of the patterns produced are still limited. Here, it is shown that ordered arrays of micro- and nanoscale features can be produced with control over their shape and size via solid-state dewetting of patches patterned from single-crystal palladium and nickel films of different thicknesses and orientations. The shape and size characteristics of the patterns are found to be widely controllable with varying the shape, width, thickness, and orientation of the initial patches. The morphological evolution of the patches is also dependent on the film material, with different dewetting behaviors observed in palladium and nickel films. The mechanisms underlying the pattern formation are explained in terms of the influence on Rayleigh-like instability of the patch geometry and the surface energy anisotropy of the film material. This mechanistic understanding of pattern formation can be used to design patches for the precise fabrication of micro- and nanoscale structures with the desired shapes and feature sizes.

Fabrication of ordered arrays of micro- and nanoscale features with control over their shape and size via templated solid-state dewetting

PubMed Central

Ye, Jongpil

2015-01-01

Templated solid-state dewetting of single-crystal films has been shown to be used to produce regular patterns of various shapes. However, the materials for which this patterning method is applicable, and the size range of the patterns produced are still limited. Here, it is shown that ordered arrays of micro- and nanoscale features can be produced with control over their shape and size via solid-state dewetting of patches patterned from single-crystal palladium and nickel films of different thicknesses and orientations. The shape and size characteristics of the patterns are found to be widely controllable with varying the shape, width, thickness, and orientation of the initial patches. The morphological evolution of the patches is also dependent on the film material, with different dewetting behaviors observed in palladium and nickel films. The mechanisms underlying the pattern formation are explained in terms of the influence on Rayleigh-like instability of the patch geometry and the surface energy anisotropy of the film material. This mechanistic understanding of pattern formation can be used to design patches for the precise fabrication of micro- and nanoscale structures with the desired shapes and feature sizes. PMID:25951816

Nanoscale chemical imaging by photoinduced force microscopy

PubMed Central

Nowak, Derek; Morrison, William; Wickramasinghe, H. Kumar; Jahng, Junghoon; Potma, Eric; Wan, Lei; Ruiz, Ricardo; Albrecht, Thomas R.; Schmidt, Kristin; Frommer, Jane; Sanders, Daniel P.; Park, Sung

2016-01-01

Correlating spatial chemical information with the morphology of closely packed nanostructures remains a challenge for the scientific community. For example, supramolecular self-assembly, which provides a powerful and low-cost way to create nanoscale patterns and engineered nanostructures, is not easily interrogated in real space via existing nondestructive techniques based on optics or electrons. A novel scanning probe technique called infrared photoinduced force microscopy (IR PiFM) directly measures the photoinduced polarizability of the sample in the near field by detecting the time-integrated force between the tip and the sample. By imaging at multiple IR wavelengths corresponding to absorption peaks of different chemical species, PiFM has demonstrated the ability to spatially map nm-scale patterns of the individual chemical components of two different types of self-assembled block copolymer films. With chemical-specific nanometer-scale imaging, PiFM provides a powerful new analytical method for deepening our understanding of nanomaterials. PMID:27051870

Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

NASA Astrophysics Data System (ADS)

Koleske, D. D.; Figiel, J. J.; Alliman, D. L.; Gunning, B. P.; Kempisty, J. M.; Creighton, J. R.; Mishima, A.; Ikenaga, K.

2017-06-01

Using metalorganic vapor phase epitaxy, methods were developed to achieve AlN films on sapphire with low etch pit density (EPD). Key to this achievement was using the same AlN growth recipe and only varying the pre-growth conditioning of the quartz-ware. After AlN growth, the quartz-ware was removed from the growth chamber and either exposed to room air or moved into the N2 purged glove box and exposed to H2O vapor. After the quartz-ware was exposed to room air or H2O, the AlN film growth was found to be more reproducible, resulting in films with (0002) and (10-12) x-ray diffraction (XRD) rocking curve linewidths of 200 and 500 arc sec, respectively, and EPDs < 100 cm-2. The EPD was found to correlate with (0002) linewidths, suggesting that the etch pits are associated with open core screw dislocations similar to GaN films. Once reproducible AlN conditions were established using the H2O pre-treatment, it was found that even small doses of trimethylaluminum (TMAl)/NH3 on the quartz-ware surfaces generated AlN films with higher EPDs. The presence of these residual TMAl/NH3-derived coatings in metalorganic vapor phase epitaxy (MOVPE) systems and their impact on the sapphire surface during heating might explain why reproducible growth of AlN on sapphire is difficult.

Engineering nanoscale stem cell niche: direct stem cell behavior at cell-matrix interface.

PubMed

Zhang, Yan; Gordon, Andrew; Qian, Weiyi; Chen, Weiqiang

2015-09-16

Biophysical cues on the extracellular matrix (ECM) have proven to be significant regulators of stem cell behavior and evolution. Understanding the interplay of these cells and their extracellular microenvironment is critical to future tissue engineering and regenerative medicine, both of which require a means of controlled differentiation. Research suggests that nanotopography, which mimics the local, nanoscale, topographic cues within the stem cell niche, could be a way to achieve large-scale proliferation and control of stem cells in vitro. This Progress Report reviews the history and contemporary advancements of this technology, and pays special attention to nanotopographic fabrication methods and the effect of different nanoscale patterns on stem cell response. Finally, it outlines potential intracellular mechanisms behind this response. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of thermal interaction between bulk GaN substrates and corral sapphire on blue light emission InGaN/GaN multi-quantum wells by MOCVD

NASA Astrophysics Data System (ADS)

Sivanathan, P. C.; Shuhaimi, Ahmad; Hamza, Hebal; Kowsz, Stacy J.; Abdul Khudus, Muhammad I. M.; Li, Hongjian; Allif, Kamarul

2018-07-01

The InGaN/GaN multi-quantum wells, growth on bulk GaN substrate were studied for blue light emission. Growth temperature plays a key role determining the peak wavelength of a quantum well. The study was carried out by growing quantum wells, MQWs on the whole sapphire at 716 °C and observed peak wavelength at 463 nm. While the bulk GaN substrate with sapphire corral grown at 703 °C and observed a blueshift at 433 nm peak wavelength. These results contradict that of typical observation of wavelength emission inversely proportional to the growth temperature. On the other hand, the growth of GaN-sapphire and GaN-silicon at similar conditions emits 435 nm and 450 nm respectively. The heat interaction of bulk GaN substrates surrounded by the sapphire corral exhibits different growth conditions in multi-quantum wells when compared to that of a whole sapphire substrate (absence of bulk GaN). The predicated surface temperature of bulk GaN substrate is 10 °C-15 °C of more than the corral sapphire. This observation may link to the difference in the thermal distribution of the growth surface corresponding to the different thermal conductivity ratio. The photoluminescence and computational techniques were used to understand in-depth of the heat interaction.

Atomistic Design and Simulations of Nanoscale Machines and Assembly

NASA Technical Reports Server (NTRS)

Goddard, William A., III; Cagin, Tahir; Walch, Stephen P.

2000-01-01

Over the three years of this project, we made significant progress on critical theoretical and computational issues in nanoscale science and technology, particularly in:(1) Fullerenes and nanotubes, (2) Characterization of surfaces of diamond and silicon for NEMS applications, (3) Nanoscale machine and assemblies, (4) Organic nanostructures and dendrimers, (5) Nanoscale confinement and nanotribology, (6) Dynamic response of nanoscale structures nanowires (metals, tubes, fullerenes), (7) Thermal transport in nanostructures.

Methods and devices for fabricating three-dimensional nanoscale structures

DOEpatents

Rogers, John A.; Jeon, Seokwoo; Park, Jangung

2010-04-27

The present invention provides methods and devices for fabricating 3D structures and patterns of 3D structures on substrate surfaces, including symmetrical and asymmetrical patterns of 3D structures. Methods of the present invention provide a means of fabricating 3D structures having accurately selected physical dimensions, including lateral and vertical dimensions ranging from 10s of nanometers to 1000s of nanometers. In one aspect, methods are provided using a mask element comprising a conformable, elastomeric phase mask capable of establishing conformal contact with a radiation sensitive material undergoing photoprocessing. In another aspect, the temporal and/or spatial coherence of electromagnetic radiation using for photoprocessing is selected to fabricate complex structures having nanoscale features that do not extend entirely through the thickness of the structure fabricated.

Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

NASA Astrophysics Data System (ADS)

Chan, Chia-Hua; Hou, Chia-Hung; Tseng, Shao-Ze; Chen, Tsing-Jen; Chien, Hung-Ta; Hsiao, Fu-Li; Lee, Chien-Chieh; Tsai, Yen-Ling; Chen, Chii-Chang

2009-07-01

This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO2 nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω-scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.

Green-diode-pumped femtosecond Ti:Sapphire laser with up to 450 mW average power.

PubMed

Gürel, K; Wittwer, V J; Hoffmann, M; Saraceno, C J; Hakobyan, S; Resan, B; Rohrbacher, A; Weingarten, K; Schilt, S; Südmeyer, T

2015-11-16

We investigate power-scaling of green-diode-pumped Ti:Sapphire lasers in continuous-wave (CW) and mode-locked operation. In a first configuration with a total pump power of up to 2 W incident onto the crystal, we achieved a CW power of up to 440 mW and self-starting mode-locking with up to 200 mW average power in 68-fs pulses using semiconductor saturable absorber mirror (SESAM) as saturable absorber. In a second configuration with up to 3 W of pump power incident onto the crystal, we achieved up to 650 mW in CW operation and up to 450 mW in 58-fs pulses using Kerr-lens mode-locking (KLM). The shortest pulse duration was 39 fs, which was achieved at 350 mW average power using KLM. The mode-locked laser generates a pulse train at repetition rates around 400 MHz. No complex cooling system is required: neither the SESAM nor the Ti:Sapphire crystal is actively cooled, only air cooling is applied to the pump diodes using a small fan. Because of mass production for laser displays, we expect that prices for green laser diodes will become very favorable in the near future, opening the door for low-cost Ti:Sapphire lasers. This will be highly attractive for potential mass applications such as biomedical imaging and sensing.

EDITORIAL: Nanoscale metrology Nanoscale metrology

NASA Astrophysics Data System (ADS)

Picotto, G. B.; Koenders, L.; Wilkening, G.

2009-08-01

Instrumentation and measurement techniques at the nanoscale play a crucial role not only in extending our knowledge of the properties of matter and processes in nanosciences, but also in addressing new measurement needs in process control and quality assurance in industry. Micro- and nanotechnologies are now facing a growing demand for quantitative measurements to support the reliability, safety and competitiveness of products and services. Quantitative measurements presuppose reliable and stable instruments and measurement procedures as well as suitable calibration artefacts to ensure the quality of measurements and traceability to standards. This special issue of Measurement Science and Technology presents selected contributions from the Nanoscale 2008 seminar held at the Istituto Nazionale di Ricerca Metrologica (INRIM), Torino, in September 2008. This was the 4th Seminar on Nanoscale Calibration Standards and Methods and the 8th Seminar on Quantitative Microscopy (the first being held in 1995). The seminar was jointly organized by the Nanometrology Group within EUROMET (The European Collaboration in Measurement Standards), the German Nanotechnology Competence Centre 'Ultraprecise Surface Figuring' (CC-UPOB), the Physikalisch-Technische Bundesanstalt (PTB) and INRIM. A special event during the seminar was the 'knighting' of Günter Wilkening from PTB, Braunschweig, Germany, as the 1st Knight of Dimensional Nanometrology. Günter Wilkening received the NanoKnight Award for his outstanding work in the field of dimensional nanometrology over the last 20 years. The contributions in this special issue deal with the developments and improvements of instrumentation and measurement methods for scanning force microscopy (SFM), electron and optical microscopy, high-resolution interferometry, calibration of instruments and new standards, new facilities and applications including critical dimension (CD) measurements on small and medium structures and nanoparticle

High Transparent and Conductive TiO2/Ag/TiO2 Multilayer Electrode Films Deposited on Sapphire Substrate

NASA Astrophysics Data System (ADS)

Loka, Chadrasekhar; Moon, Sung Whan; Choi, YiSik; Lee, Kee-Sun

2018-03-01

Transparent conducting oxides attract intense interests due to its diverse industrial applications. In this study, we report sapphire substrate-based TiO2/Ag/TiO2 (TAT) multilayer structure of indium-free transparent conductive multilayer coatings. The TAT thin films were deposited at room temperature on sapphire substrates and a rigorous analysis has been presented on the electrical and optical properties of the films as a function of Ag thickness. The optical and electrical properties were mainly controlled by the Ag mid-layer thickness of the TAT tri-layer. The TAT films showed high luminous transmittance 84% at 550 nm along with noteworthy low electrical resistance 3.65 × 10-5 Ω-cm and sheet resistance of 3.77 Ω/square, which is better are than those of amorphous ITO films and any sapphire-based dielectric/metal/dielectric multilayer stack. The carrier concentration of the films was increased with respect to Ag thickness. We obtained highest Hackke's figure of merit 43.97 × 10-3 Ω-1 from the TAT multilayer thin film with a 16 nm thick Ag mid-layer.

Dynamics of systems on the nanoscale

NASA Astrophysics Data System (ADS)

Korol, Andrei V.; Solov'yov, Andrey V.

2017-12-01

Various aspects of the structure formation and dynamics of animate and inanimate matter on the nanoscale is a highly interdisciplinary field of rapidly emerging research interest by both experimentalists and theorists. The International Conference on Dynamics of Systems on the Nanoscale (DySoN) is the premier forum to present cutting-edge research in this field. It was established in 2010 and the most recent conference was held in Bad Ems, Germany in October of 2016. This Topical Issue presents original research results from some of the participants, who attended this conference. Contribution to the Topical Issue "Dynamics of Systems at the Nanoscale", edited by Andrey Solov'yov and Andrei Korol.

Carrier envelope offset frequency detection and stabilization of a diode-pumped mode-locked Ti:sapphire laser.

PubMed

Gürel, Kutan; Wittwer, Valentin J; Hakobyan, Sargis; Schilt, Stéphane; Südmeyer, Thomas

2017-03-15

We demonstrate the first diode-pumped Ti:sapphire laser frequency comb. It is pumped by two green laser diodes with a total pump power of 3 W. The Ti:sapphire laser generates 250 mW of average output power in 61-fs pulses at a repetition rate of 216 MHz. We generated an octave-spanning supercontinuum spectrum in a photonic-crystal fiber and detected the carrier envelope offset (CEO) frequency in a standard f-to-2f interferometer setup. We stabilized the CEO-frequency through direct current modulation of one of the green pump diodes with a feedback bandwidth of 55 kHz limited by the pump diode driver used in this experiment. We achieved a reduction of the CEO phase noise power spectral density by 140 dB at 1 Hz offset frequency. An advantage of diode pumping is the ability for high-bandwidth modulation of the pump power via direct current modulation. After this experiment, we studied the modulation capabilities and noise properties of green pump laser diodes with improved driver electronics. The current-to-output-power modulation transfer function shows a bandwidth larger than 1 MHz, which should be sufficient to fully exploit the modulation bandwidth of the Ti:sapphire gain for CEO stabilization in future experiments.

Structural and optical properties of low temperature grown AlN films on sapphire using helicon sputtering system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Meei-Ru; Chen, Hou-Guang; Kao, Hui-Ling, E-mail: hlkao@cycu.edu.tw

2015-05-15

AlN thin films have been deposited directly on c-plane sapphire substrates at low temperatures by a helicon sputtering system. The structural quality of AlN epitaxial films was characterized by x-ray diffractometry and transmission electron microscopy. The films exhibit smooth surface with root-mean-square roughness as small as 0.7 nm evaluated by atomic force microscope. The optical transmittance spectra show a steep absorption edge at the wavelength of 200 nm and a high transmittance of over 80% in the visible range. The band-edge transition (6.30 eV) of AlN film was observed in the cathodoluminescence spectrum recorded at 11 K. The spectral response of metal–semiconductor–metal photodetectors constructedmore » with AlN/sapphire reveals the peak responsivity at 200 nm and a UV/visible rejection ratio of about two orders of magnitude. The results of this low temperature deposition suggest the feasibility of the epitaxial growth of AlN on sapphire substrates and the incorporation of the AlN films in the surface acoustic wave devices and the optical devices at deep ultraviolet region.« less

A statistical nanomechanism of biomolecular patterning actuated by surface potential

NASA Astrophysics Data System (ADS)

Lin, Chih-Ting; Lin, Chih-Hao

2011-02-01

Biomolecular patterning on a nanoscale/microscale on chip surfaces is one of the most important techniques used in vitro biochip technologies. Here, we report upon a stochastic mechanics model we have developed for biomolecular patterning controlled by surface potential. The probabilistic biomolecular surface adsorption behavior can be modeled by considering the potential difference between the binding and nonbinding states. To verify our model, we experimentally implemented a method of electroactivated biomolecular patterning technology and the resulting fluorescence intensity matched the prediction of the developed model quite well. Based on this result, we also experimentally demonstrated the creation of a bovine serum albumin pattern with a width of 200 nm in 5 min operations. This submicron noncovalent-binding biomolecular pattern can be maintained for hours after removing the applied electrical voltage. These stochastic understandings and experimental results not only prove the feasibility of submicron biomolecular patterns on chips but also pave the way for nanoscale interfacial-bioelectrical engineering.

From Lab to Fab: Developing a Nanoscale Delivery Tool for Scalable Nanomanufacturing

NASA Astrophysics Data System (ADS)

Safi, Asmahan A.

The emergence of nanomaterials with unique properties at the nanoscale over the past two decades carries a capacity to impact society and transform or create new industries ranging from nanoelectronics to nanomedicine. However, a gap in nanomanufacturing technologies has prevented the translation of nanomaterial into real-world commercialized products. Bridging this gap requires a paradigm shift in methods for fabricating structured devices with a nanoscale resolution in a repeatable fashion. This thesis explores the new paradigms for fabricating nanoscale structures devices and systems for high throughput high registration applications. We present a robust and scalable nanoscale delivery platform, the Nanofountain Probe (NFP), for parallel direct-write of functional materials. The design and microfabrication of NFP is presented. The new generation addresses the challenges of throughput, resolution and ink replenishment characterizing tip-based nanomanufacturing. To achieve these goals, optimized probe geometry is integrated to the process along with channel sealing and cantilever bending. The capabilities of the newly fabricated probes are demonstrated through two type of delivery: protein nanopatterning and single cell nanoinjection. The broad applications of the NFP for single cell delivery are investigated. An external microfluidic packaging is developed to enable delivery in liquid environment. The system is integrated to a combined atomic force microscope and inverted fluorescence microscope. Intracellular delivery is demonstrated by injecting a fluorescent dextran into Hela cells in vitro while monitoring the injection forces. Such developments enable in vitro cellular delivery for single cell studies and high throughput gene expression. The nanomanufacturing capabilities of NFPs are explored. Nanofabrication of carbon nanotube-based electronics presents all the manufacturing challenges characterizing of assembling nanomaterials precisely onto devices. The

[Smart drug delivery systems based on nanoscale ZnO].

PubMed

Huang, Xiao; Chen, Chun; Yi, Caixia; Zheng, Xi

2018-04-01

In view of the excellent biocompatibility as well as the low cost, nanoscale ZnO shows great potential for drug delivery application. Moreover, The charming character enable nanoscale ZnO some excellent features (e.g. dissolution in acid, ultrasonic permeability, microwave absorbing, hydrophobic/hydrophilic transition). All of that make nanoscale ZnO reasonable choices for smart drug delivery. In the recent decade, more and more studies have focused on controlling the drug release behavior via smart drug delivery systems based on nanoscale ZnO responsive to some certain stimuli. Herein, we review the recent exciting progress on the pH-responsive, ultrasound-responsive, microwave-responsive and UV-responsive nanoscale ZnO-based drug delivery systems. A brief introduction of the drug controlled release behavior and its effect of the drug delivery systems is presented. The biocompatibility of nanoscale ZnO is also discussed. Moreover, its development prospect is looked forward.

An RNAi Screen for Genes Involved in Nanoscale Protrusion Formation on Corneal Lens in Drosophila melanogaster.

PubMed

Minami, Ryunosuke; Sato, Chiaki; Yamahama, Yumi; Kubo, Hideo; Hariyama, Takahiko; Kimura, Ken-Ichi

2016-12-01

The "moth-eye" structure, which is observed on the surface of corneal lens in several insects, supports anti-reflective and self-cleaning functions due to nanoscale protrusions known as corneal nipples. Although the morphology and function of the "moth-eye" structure, are relatively well studied, the mechanism of protrusion formation from cell-secreted substances is unknown. In Drosophila melanogaster, a compound eye consists of approximately 800 facets, the surface of which is formed by the corneal lens with nanoscale protrusions. In the present study, we sought to identify genes involved in "moth-eye" structure, formation in order to elucidate the developmental mechanism of the protrusions in Drosophila. We re-examined the aberrant patterns in classical glossy-eye mutants by scanning electron microscope and classified the aberrant patterns into groups. Next, we screened genes encoding putative structural cuticular proteins and genes involved in cuticular formation using eye specific RNAi silencing methods combined with the Gal4/UAS expression system. We identified 12 of 100 candidate genes, such as cuticular proteins family genes (Cuticular protein 23B and Cuticular protein 49Ah), cuticle secretion-related genes (Syntaxin 1A and Sec61 ββ subunit), ecdysone signaling and biosynthesis-related genes (Ecdysone receptor, Blimp-1, and shroud), and genes involved in cell polarity/cell architecture (Actin 5C, shotgun, armadillo, discs large1, and coracle). Although some of the genes we identified may affect corneal protrusion formation indirectly through general patterning defects in eye formation, these initial findings have encouraged us to more systematically explore the precise mechanisms underlying the formation of nanoscale protrusions in Drosophila.

Nanoscale characterization of GaN/InGaN multiple quantum wells on GaN nanorods by photoluminescence spectroscopy

NASA Astrophysics Data System (ADS)

Chen, Weijian; Wen, Xiaoming; Latzel, Michael; Yang, Jianfeng; Huang, Shujuan; Shrestha, Santosh; Patterson, Robert; Christiansen, Silke; Conibeer, Gavin

2017-02-01

GaN/InGaN multiple quantum wells (MQW) and GaN nanorods have been widely studied as a candidate material for high-performance light emitting diodes. In this study, GaN/InGaN MQW on top of GaN nanorods are characterized in nanoscale using confocal microscopy associated with photoluminescence spectroscopy, including steady-state PL, timeresolved PL and fluorescence lifetime imaging (FLIM). Nanorods are fabricated by etching planar GaN/InGaN MQWs on top of a GaN layer on a c-plane sapphire substrate. Photoluminescence efficiency from the GaN/InGaN nanorods is evidently higher than that of the planar structure, indicating the emission improvement. Time-resolved photoluminescence (TRPL) prove that surface defects on GaN nanorod sidewalls have a strong influence on the luminescence property of the GaN/InGaN MWQs. Such surface defects can be eliminated by proper surface passivation. Moreover, densely packed nanorod array and sparsely standing nanorods have been studied for better understanding the individual property and collective effects from adjacent nanorods. The combination of the optical characterization techniques guides optoelectronic materials and device fabrication.

EDITORIAL: Nanoscale metrology Nanoscale metrology

NASA Astrophysics Data System (ADS)

Klapetek, P.; Koenders, L.

2011-09-01

This special issue of Measurement Science and Technology presents selected contributions from the NanoScale 2010 seminar held in Brno, Czech Republic. It was the 5th Seminar on Nanoscale Calibration Standards and Methods and the 9th Seminar on Quantitative Microscopy (the first being held in 1995). The seminar was jointly organized with the Czech Metrology Institute (CMI) and the Nanometrology Group of the Technical Committee-Length of EURAMET. There were two workshops that were integrated into NanoScale 2010: first a workshop presenting the results obtained in NANOTRACE, a European Metrology Research Project (EMRP) on displacement-measuring optical interferometers, and second a workshop about the European metrology landscape in nanometrology related to thin films, scanning probe microscopy and critical dimension. The aim of this workshop was to bring together developers, applicants and metrologists working in this field of nanometrology and to discuss future needs. For more information see www.co-nanomet.eu. The articles in this special issue of Measurement Science and Technology cover some novel scientific results. This issue can serve also as a representative selection of topics that are currently being investigated in the field of European and world-wide nanometrology. Besides traditional topics of dimensional metrology, like development of novel interferometers or laser stabilization techniques, some novel interesting trends in the field of nanometrology are observed. As metrology generally reflects the needs of scientific and industrial research, many research topics addressed refer to current trends in nanotechnology, too, focusing on traceability and improved measurement accuracy in this field. While historically the most studied standards in nanometrology were related to simple geometric structures like step heights or 1D or 2D gratings, now we are facing tasks to measure 3D structures and many unforeseen questions arising from interesting physical

Can amorphization take place in nanoscale interconnects?

PubMed

Kumar, S; Joshi, K L; van Duin, A C T; Haque, M A

2012-03-09

The trend of miniaturization has highlighted the problems of heat dissipation and electromigration in nanoelectronic device interconnects, but not amorphization. While amorphization is known to be a high pressure and/or temperature phenomenon, we argue that defect density is the key factor, while temperature and pressure are only the means. For nanoscale interconnects carrying modest current density, large vacancy concentrations may be generated without the necessity of high temperature or pressure due to the large fraction of grain boundaries and triple points. To investigate this hypothesis, we performed in situ transmission electron microscope (TEM) experiments on 200 nm thick (80 nm average grain size) aluminum specimens. Electron diffraction patterns indicate partial amorphization at modest current density of about 10(5) A cm(-2), which is too low to trigger electromigration. Since amorphization results in drastic decrease in mechanical ductility as well as electrical and thermal conductivity, further increase in current density to about 7 × 10(5) A cm(-2) resulted in brittle fracture failure. Our molecular dynamics (MD) simulations predict the formation of amorphous regions in response to large mechanical stresses (due to nanoscale grain size) and excess vacancies at the cathode side of the thin films. The findings of this study suggest that amorphization can precede electromigration and thereby play a vital role in the reliability of micro/nanoelectronic devices.

Low Dose X-Ray Speckle Visibility Spectroscopy Reveals Nanoscale Dynamics in Radiation Sensitive Ionic Liquids

NASA Astrophysics Data System (ADS)

Verwohlt, Jan; Reiser, Mario; Randolph, Lisa; Matic, Aleksandar; Medina, Luis Aguilera; Madsen, Anders; Sprung, Michael; Zozulya, Alexey; Gutt, Christian

2018-04-01

X-ray radiation damage provides a serious bottleneck for investigating microsecond to second dynamics on nanometer length scales employing x-ray photon correlation spectroscopy. This limitation hinders the investigation of real time dynamics in most soft matter and biological materials which can tolerate only x-ray doses of kGy and below. Here, we show that this bottleneck can be overcome by low dose x-ray speckle visibility spectroscopy. Employing x-ray doses of 22-438 kGy and analyzing the sparse speckle pattern of count rates as low as 6.7 ×10-3 per pixel, we follow the slow nanoscale dynamics of an ionic liquid (IL) at the glass transition. At the prepeak of nanoscale order in the IL, we observe complex dynamics upon approaching the glass transition temperature TG with a freezing in of the alpha relaxation and a multitude of millisecond local relaxations existing well below TG . We identify this fast relaxation as being responsible for the increasing development of nanoscale order observed in ILs at temperatures below TG .

New directions for nanoscale thermoelectric materials research

NASA Technical Reports Server (NTRS)

Dresselhaus, M. S.; Chen, G.; Tang, M. Y.; Yang, R. G.; Lee, H.; Wang, D. Z.; Ren, F.; Fleurial, J. P.; Gogna, P.

2005-01-01

Many of the recent advances in enhancing the thermoelectric figure of merit are linked to nanoscale phenomena with both bulk samples containing nanoscale constituents and nanoscale materials exhibiting enhanced thermoelectric performance in their own right. Prior theoretical and experimental proof of principle studies on isolated quantum well and quantum wire samples have now evolved into studies on bulk samples containing nanostructured constituents. In this review, nanostructural composites are shown to exhibit nanostructures and properties that show promise for thermoelectric applications. A review of some of the results obtained to date are presented.

Characterization of AFB sapphire single crystal composites for infrared window application

NASA Astrophysics Data System (ADS)

Lee, H.-C.; Meissner, H. E.

2007-04-01

Next generation weapons platforms may require 30" x 30" sapphire windows. Since these sizes exceed what can be manufactured directly, a concept is proposed and experimental data are furnished in this report on the viability of increasing the window dimensions by Adhesive-Free-Bonding (AFB®) of smaller starting components by their edges. The bonding scheme has been evaluated for single crystal sapphire but is expected to also work equally well for other IR window materials. The bonding mechanism is explained with Van der Waals theory of attractive forces and confirmed experimentally by applying the bending plate theory. The gap at the interface between two components is deduced from the measured roughness of the polished surfaces that are brought into optical contact and subsequently heat-treated, and is estimated to be about 2 Å rms. Stress relief at AFB® interfaces has been established. Experimental data of flexural strength determined by four-point bending at room temperature is reported. The data indicates that AFB® composite specimens and equivalently prepared blank samples fracture at statistically same loads under standardized testing conditions. Failure of composites has not been observed at the interface and only at random flaws that are a result of sample preparation.

Unusual ruby-sapphire transition in alluvial megacrysts, Cenozoic basaltic gem field, New England, New South Wales, Australia

NASA Astrophysics Data System (ADS)

Sutherland, Frederick L.; Graham, Ian T.; Harris, Stephen J.; Coldham, Terry; Powell, William; Belousova, Elena A.; Martin, Laure

2017-05-01

Rare ruby crystals appear among prevailing sapphire crystals mined from placers within basaltic areas in the New England gem-field, New South Wales, Australia. New England ruby (NER) has distinctive trace element features compared to those from ruby elsewhere in Australia and indeed most ruby from across the world. The NER suite includes ruby (up to 3370 ppm Cr), pink sapphire (up to 1520 ppm Cr), white sapphire (up to 910 ppm) and violet, mauve, purple, or bluish sapphire (up to 1410 ppm Cr). Some crystals show outward growth banding in this respective colour sequence. All four colour zones are notably high in Ga (up to 310 ppm) and Si (up to 1820 ppm). High Ga and Ga/Mg values are unusual in ruby and its trace element plots (laser ablation-inductively coupled plasma-mass spectrometry) and suggests that magmatic-metasomatic inputs were involved in the NER suite genesis. In situ oxygen isotope analyses (secondary ion mass spectrometry) across the NER suite colour range showed little variation (n = 22; δ18O = 4.4 ± 0.4, 2σ error), and are values typical for corundum associated with ultramafic/mafic rocks. The isolated NER xenocryst suite, corroded by basalt transport and with few internal inclusions, presents a challenge in deciphering its exact origin. Detailed consideration of its high Ga chemistry in relation to the known geology of the surrounding region was used to narrow down potential sources. These include Late Palaeozoic-Triassic fractionated I-type granitoid magmas or Mesozoic-Cenozoic felsic fractionates from basaltic magmas that interacted with early Palaeozoic Cr-bearing ophiolite bodies in the New England Orogen. Other potential sources may lie deeper within lower crust-mantle metamorphic assemblages, but need to match the anomalous high-Ga geochemistry of the New England ruby suite.

Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yerci, S.; Serincan, U.; Dogan, I.

2006-10-01

Silicon nanocrystals, average sizes ranging between 3 and 7 nm, were formed in sapphire matrix by ion implantation and subsequent annealing. Evolution of the nanocrystals was detected by Raman spectroscopy and x-ray diffraction (XRD). Raman spectra display that clusters in the matrix start to form nanocrystalline structures at annealing temperatures as low as 800 deg. C in samples with high dose Si implantation. The onset temperature of crystallization increases with decreasing dose. Raman spectroscopy and XRD reveal gradual transformation of Si clusters into crystalline form. Visible photoluminescence band appears following implantation and its intensity increases with subsequent annealing process. Whilemore » the center of the peak does not shift, the intensity of the peak decreases with increasing dose. The origin of the observed photoluminescence is discussed in terms of radiation induced defects in the sapphire matrix.« less

High refractive index immersion liquid for superresolution 3D imaging using sapphire-based aplanatic numerical aperture increasing lens optics.

PubMed

Laskar, Junaid M; Shravan Kumar, P; Herminghaus, Stephan; Daniels, Karen E; Schröter, Matthias

2016-04-20

Optically transparent immersion liquids with refractive index (n∼1.77) to match the sapphire-based aplanatic numerical aperture increasing lens (aNAIL) are necessary for achieving deep 3D imaging with high spatial resolution. We report that antimony tribromide (SbBr₃) salt dissolved in liquid diiodomethane (CH₂I₂) provides a new high refractive index immersion liquid for optics applications. The refractive index is tunable from n=1.74 (pure) to n=1.873 (saturated), by adjusting either salt concentration or temperature; this allows it to match (or even exceed) the refractive index of sapphire. Importantly, the solution gives excellent light transmittance in the ultraviolet to near-infrared range, an improvement over commercially available immersion liquids. This refractive-index-matched immersion liquid formulation has enabled us to develop a sapphire-based aNAIL objective that has both high numerical aperture (NA=1.17) and long working distance (WD=12  mm). This opens up new possibilities for deep 3D imaging with high spatial resolution.

The Valence- and Conduction-Band Structure of the Sapphire (1102) Surface.

DTIC Science & Technology

1984-12-01

surface. The pbotomission spectrum of the valece-baud region has boon adjusted to rmove croas-section effect s and comparod to the recent theoretical ...transitions in Al203. Several theoretical deteminations of the electron structure of various A1203 analoaues have bes performed. These calculations were...picture of the valence sad core density of states in sapphire. The rew, 31 velesee-bend data of Fit. I& and the theoretical 003 shows is Fig. 1.. which

Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High-T and Dynamic Gas Pressure in Harsh Environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiao, Hai; Tsai, Hai-Lung; Dong, Junhang

2014-09-30

This is the final report for the program “Micro-Structured Sapphire Fiber Sensors for Simultaneous Measurements of High Temperature and Dynamic Gas Pressure in Harsh Environments”, funded by NETL, and performed by Missouri University of Science and Technology, Clemson University and University of Cincinnati from October 1, 2009 to September 30, 2014. Securing a sustainable energy economy by developing affordable and clean energy from coal and other fossil fuels is a central element to the mission of The U.S. Department of Energy’s (DOE) National Energy Technology Laboratory (NETL). To further this mission, NETL funds research and development of novel sensor technologiesmore » that can function under the extreme operating conditions often found in advanced power systems. The main objective of this research program is to conduct fundamental and applied research that will lead to successful development and demonstration of robust, multiplexed, microstructured silica and single-crystal sapphire fiber sensors to be deployed into the hot zones of advanced power and fuel systems for simultaneous measurements of high temperature and gas pressure. The specific objectives of this research program include: 1) Design, fabrication and demonstration of multiplexed, robust silica and sapphire fiber temperature and dynamic gas pressure sensors that can survive and maintain fully operational in high-temperature harsh environments. 2) Development and demonstration of a novel method to demodulate the multiplexed interferograms for simultaneous measurements of temperature and gas pressure in harsh environments. 3) Development and demonstration of novel sapphire fiber cladding and low numerical aperture (NA) excitation techniques to assure high signal integrity and sensor robustness.« less

Measurement and thermal modeling of sapphire substrate temperature at III-Nitride MOVPE conditions

DOE PAGES

Creighton, J. Randall; Coltrin, Michael E.; Figiel, Jeffrey J.

2017-04-01

Here, growth rates and alloy composition of AlGaN grown by MOVPE is often very temperature dependent due to the presence of gas-phase parasitic chemical processes. These processes make wafer temperature measurement highly important, but in fact such measurements are very difficult because of substrate transparency in the near- IR (~900 nm) where conventional pyrometers detect radiation. The transparency problem can be solved by using a mid-IR pyrometer operating at a wavelength (~7500 nm) where sapphire is opaque. We employ a mid- IR pyrometer to measure the sapphire wafer temperature and simultaneously a near-IR pyrometer to measure wafer pocket temperature, whilemore » varying reactor pressure in both a N 2 and H 2 ambient. Near 1300 °C, as the reactor pressure is lowered from 300 Torr to 10 Torr the wafer temperature drops dramatically, and the ΔT between the pocket and wafer increases from ~20 °C to ~250 °C. Without the mid-IR pyrometer the large wafer temperature change with pressure would not have been noted. In order to explain this behavior we have developed a quasi-2D thermal model that includes a proper accounting of the pressure-dependent thermal contact resistance, and also accounts for sapphire optical transmission. The model and experimental results demonstrate that at most growth conditions the majority of the heat is transported from the wafer pocket to the wafer via gas conduction, in the free molecular flow limit. In this limit gas conductivity is independent of gap size but first order in pressure, and can quantitatively explain results from 20 to 300 Torr. Further analysis yields a measure of the thermal accommodation coefficients; α(H 2) =0.23, α(N 2) =0.50, which are in the range typically measured.« less

Direct diode-pumped Kerr-lens mode-locked Ti:sapphire laser

PubMed Central

Durfee, Charles G.; Storz, Tristan; Garlick, Jonathan; Hill, Steven; Squier, Jeff A.; Kirchner, Matthew; Taft, Greg; Shea, Kevin; Kapteyn, Henry; Murnane, Margaret; Backus, Sterling

2012-01-01

We describe a Ti:sapphire laser pumped directly with a pair of 1.2W 445nm laser diodes. With over 30mW average power at 800 nm and a measured pulsewidth of 15fs, Kerr-lens-modelocked pulses are available with dramatically decreased pump cost. We propose a simple model to explain the observed highly stable Kerr-lens modelocking in spite of the fact that both the mode-locked and continuous-wave modes are smaller than the pump mode in the crystal. PMID:22714433

Creating nanoscale emulsions using condensation.

PubMed

Guha, Ingrid F; Anand, Sushant; Varanasi, Kripa K

2017-11-08

Nanoscale emulsions are essential components in numerous products, ranging from processed foods to novel drug delivery systems. Existing emulsification methods rely either on the breakup of larger droplets or solvent exchange/inversion. Here we report a simple, scalable method of creating nanoscale water-in-oil emulsions by condensing water vapor onto a subcooled oil-surfactant solution. Our technique enables a bottom-up approach to forming small-scale emulsions. Nanoscale water droplets nucleate at the oil/air interface and spontaneously disperse within the oil, due to the spreading dynamics of oil on water. Oil-soluble surfactants stabilize the resulting emulsions. We find that the oil-surfactant concentration controls the spreading behavior of oil on water, as well as the peak size, polydispersity, and stability of the resulting emulsions. Using condensation, we form emulsions with peak radii around 100 nm and polydispersities around 10%. This emulsion formation technique may open different routes to creating emulsions, colloidal systems, and emulsion-based materials.

Slow Crack Growth and Fracture Toughness of Sapphire for the International Space Station Fluids and Combustion Facility

NASA Technical Reports Server (NTRS)

Salem, Jonathan A.

2006-01-01

The fracture toughness, inert flexural strength, and slow crack growth parameters of the r- and a-planes of sapphire grown by the Heat Exchange Method were measured to qualify sapphire for structural use in the International Space Station. The fracture toughness in dry nitrogen, K(sub Ipb), was 2.31 +/- 0.12 MPa(square root of)m and 2.47 +/- 0.15 MPa(squre root of)m for the a- and r-planes, respectively. Fracture toughness measured in water via the operational procedure in ASTM C1421 was significantly lower, K(sub Ivb) = 1.95+/- 0.03 MPa(square root of)m, 1.94 +/- 0.07 and 1.77 +/- 0.13 MPa(square root of)m for the a- , m- and r-planes, respectively. The mean inert flexural strength in dry nitrogen was 1085 +/- 127 MPa for the r-plane and 1255 +/- 547 MPa for the a-plane. The power law slow crack growth exponent for testing in water was n = 21 +/- 4 for the r-plane and n (greater than or equal to) 31 for the a-plane. The power law slow crack growth coefficient was A = 2.81 x 10(exp -14) m/s x (MPa(squre root of)m)/n for the r-plane and A (approx. equals)2.06 x 10(exp -15) m/s x (MPa(square root of)m)/n for the a-plane. The r- and a-planes of sapphire are relatively susceptible to stress corrosion induced slow crack growth in water. However, failure occurs by competing modes of slow crack growth at long failure times and twinning for short failure time and inert environments. Slow crack growth testing needs to be performed at low failure stress levels and long failure times so that twinning does not affect the results. Some difficulty was encountered in measuring the slow crack growth parameters for the a-plane due to a short finish (i.e., insufficient material removal for elimination of the damage generated in the early grinding stages). A consistent preparation method that increases the Weibull modulus of sapphire test specimens and components is needed. This would impart higher component reliability, even if higher Weibull modulus is gained at the sacrifice of

Transformation of a Plane Wavefront in Hemispherical Lenses Made of Leuco-Sapphire

NASA Astrophysics Data System (ADS)

Vetrov, V. N.; Ignatenkov, B. A.; Yakobson, V. E.

2018-01-01

An algorithm for wavefront calculation of ordinary and extraordinary waves after propagation through hemispherical components made of a uniaxial crystal is developed. The influence of frequency dispersion of n o and n e , as well as change in the direction of the optic axis of the crystal, on extraordinary wavefront in hemispheres made of from leuco-sapphire and a plastically deformed analog thereof is determined.

Nanoscale thermal transport: Theoretical method and application

NASA Astrophysics Data System (ADS)

Zeng, Yu-Jia; Liu, Yue-Yang; Zhou, Wu-Xing; Chen, Ke-Qiu

2018-03-01

With the size reduction of nanoscale electronic devices, the heat generated by the unit area in integrated circuits will be increasing exponentially, and consequently the thermal management in these devices is a very important issue. In addition, the heat generated by the electronic devices mostly diffuses to the air in the form of waste heat, which makes the thermoelectric energy conversion also an important issue for nowadays. In recent years, the thermal transport properties in nanoscale systems have attracted increasing attention in both experiments and theoretical calculations. In this review, we will discuss various theoretical simulation methods for investigating thermal transport properties and take a glance at several interesting thermal transport phenomena in nanoscale systems. Our emphasizes will lie on the advantage and limitation of calculational method, and the application of nanoscale thermal transport and thermoelectric property. Project supported by the Nation Key Research and Development Program of China (Grant No. 2017YFB0701602) and the National Natural Science Foundation of China (Grant No. 11674092).

Generating atomically sharp p -n junctions in graphene and testing quantum electron optics on the nanoscale

NASA Astrophysics Data System (ADS)

Bai, Ke-Ke; Zhou, Jiao-Jiao; Wei, Yi-Cong; Qiao, Jia-Bin; Liu, Yi-Wen; Liu, Hai-Wen; Jiang, Hua; He, Lin

2018-01-01

Creation of high-quality p -n junctions in graphene monolayer is vital in studying many exotic phenomena of massless Dirac fermions. However, even with the fast progress of graphene technology for more than ten years, it remains conspicuously difficult to generate nanoscale and atomically sharp p -n junctions in graphene. Here, we realized nanoscale p -n junctions with atomically sharp boundaries in graphene monolayer by using monolayer vacancy island of Cu surface. The generated sharp p -n junctions with the height as high as 660 meV isolate the graphene above the Cu monolayer vacancy island as nanoscale graphene quantum dots (GQDs) in a continuous graphene sheet. Massless Dirac fermions are confined by the p -n junctions for a finite time to form quasibound states in the GQDs. By using scanning tunneling microscopy, we observe resonances of quasibound states in the GQDs with various sizes and directly visualize effects of geometries of the GQDs on the quantum interference patterns of the quasibound states, which allow us to test the quantum electron optics based on graphene in atomic scale.

Refractive index of r-cut sapphire under shock pressure range 5 to 65 GPa

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Xiuxia; Li, Jiabo; Li, Jun

2014-09-07

High-pressure refractive index of optical window materials not only can provide information on electronic polarizability and band-gap structure, but also is important for velocity correction in particle-velocity measurement with laser interferometers. In this work, the refractive index of r-cut sapphire window at 1550 nm wavelength was measured under shock pressures of 5–65 GPa. The refractive index (n) decreases linearly with increasing shock density (ρ) for shock stress above the Hugoniot elastic limit (HEL): n = 2.0485 (± 0.0197) − 0.0729 (± 0.0043)ρ, while n remains nearly a constant for elastic shocks. This behavior is attributed to the transition from elastic (below HEL) to heterogeneous plastic deformationmore » (above HEL). Based on the obtained refractive index-density relationship, polarizability of the shocked sapphire was also obtained.« less

Nanoscale assembly of lanthanum silica with dense and porous interfacial structures.

PubMed

Ballinger, Benjamin; Motuzas, Julius; Miller, Christopher R; Smart, Simon; Diniz da Costa, João C

2015-02-03

This work reports on the nanoscale assembly of hybrid lanthanum oxide and silica structures, which form patterns of interfacial dense and porous networks. It was found that increasing the molar ratio of lanthanum nitrate to tetraethyl orthosilicate (TEOS) in an acid catalysed sol-gel process alters the expected microporous metal oxide silica structure to a predominantly mesoporous structure above a critical lanthanum concentration. This change manifests itself by the formation of a lanthanum silicate phase, which results from the reaction of lanthanum oxide nanoparticles with the silica matrix. This process converts the microporous silica into the denser silicate phase. Above a lanthanum to silica ratio of 0.15, the combination of growth and microporous silica consumption results in the formation of nanoscale hybrid lanthanum oxides, with the inter-nano-domain spacing forming mesoporous volume. As the size of these nano-domains increases with concentration, so does the mesoporous volume. The absence of lanthanum hydroxide (La(OH)3) suggests the formation of La2O3 surrounded by lanthanum silicate.

An All-Solid-State High Repetiton Rate Titanium:Sapphire Laser System For Resonance Ionization Laser Ion Sources

NASA Astrophysics Data System (ADS)

Mattolat, C.; Rothe, S.; Schwellnus, F.; Gottwald, T.; Raeder, S.; Wendt, K.

2009-03-01

On-line production facilities for radioactive isotopes nowadays heavily rely on resonance ionization laser ion sources due to their demonstrated unsurpassed efficiency and elemental selectivity. Powerful high repetition rate tunable pulsed dye or Ti:sapphire lasers can be used for this purpose. To counteract limitations of short pulse pump lasers, as needed for dye laser pumping, i.e. copper vapor lasers, which include high maintenance and nevertheless often only imperfect reliability, an all-solid-state Nd:YAG pumped Ti:sapphire laser system has been constructed. This could complement or even replace dye laser systems, eliminating their disadvantages but on the other hand introduce shortcomings on the side of the available wavelength range. Pros and cons of these developments will be discussed.

Single and low order mode interrogation of a multimode sapphire fibre Bragg grating sensor with tapered fibres

NASA Astrophysics Data System (ADS)

Grobnic, D.; Mihailov, S. J.; Ding, H.; Bilodeau, F.; Smelser, C. W.

2006-05-01

Multimode sapphire fibre Bragg gratings (SFBG) made with an ultrafast Ti:sapphire 800 nm laser and a phase mask were probed using a tapered single mode fibre of different taper diameters to produce single and low order mode reflection/transmission responses. A configuration made of an input single mode tapered fibre and multimode silica fibre used for output coupling was also tested and has delivered a filtered multimode transmission spectrum. The tapered coupling improved the spectral resolution of the SFBG. Such improvements facilitate the utilization of the SFBG as a high temperature sensor. Wavelength shifts of the single mode response were monitored as a function of temperature up to 1500 °C with no detectable degradation in the grating strength or hysteresis in the Bragg resonance.

Nano-Encrypted Morse Code: A Versatile Approach to Programmable and Reversible Nanoscale Assembly and Disassembly

PubMed Central

Wong, Ngo Yin; Xing, Hang; Tan, Li Huey; Lu, Yi

2013-01-01

While much work has been devoted to nanoscale assembly of functional materials, selective reversible assembly of components in the nanoscale pattern at selective sites has received much less attention. Exerting such a reversible control of the assembly process will make it possible to fine-tune the functional properties of the assembly and to realize more complex designs. Herein, by taking advantage of different binding affinities of biotin and desthiobiotin toward streptavidin, we demonstrate selective and reversible decoration of DNA origami tiles with streptavidin, including revealing an encrypted Morse code “NANO” and reversible exchange of uppercase letter “I” with lowercase “i”. The yields of the conjugations are high (> 90%) and the process is reversible. We expect this versatile conjugation technique to be widely applicable with different nanomaterials and templates. PMID:23373425

Nano-encrypted Morse code: a versatile approach to programmable and reversible nanoscale assembly and disassembly.

PubMed

Wong, Ngo Yin; Xing, Hang; Tan, Li Huey; Lu, Yi

2013-02-27

While much work has been devoted to nanoscale assembly of functional materials, selective reversible assembly of components in the nanoscale pattern at selective sites has received much less attention. Exerting such a reversible control of the assembly process will make it possible to fine-tune the functional properties of the assembly and to realize more complex designs. Herein, by taking advantage of different binding affinities of biotin and desthiobiotin toward streptavidin, we demonstrate selective and reversible decoration of DNA origami tiles with streptavidin, including revealing an encrypted Morse code "NANO" and reversible exchange of uppercase letter "I" with lowercase "i". The yields of the conjugations are high (>90%), and the process is reversible. We expect this versatile conjugation technique to be widely applicable with different nanomaterials and templates.

Nanoscale tissue engineering: spatial control over cell-materials interactions

PubMed Central

Wheeldon, Ian; Farhadi, Arash; Bick, Alexander G.; Jabbari, Esmaiel; Khademhosseini, Ali

2011-01-01

Cells interact with the surrounding environment by making tens to hundreds of thousands of nanoscale interactions with extracellular signals and features. The goal of nanoscale tissue engineering is to harness the interactions through nanoscale biomaterials engineering in order to study and direct cellular behaviors. Here, we review the nanoscale tissue engineering technologies for both two- and three-dimensional studies (2- and 3D), and provide a holistic overview of the field. Techniques that can control the average spacing and clustering of cell adhesion ligands are well established and have been highly successful in describing cell adhesion and migration in 2D. Extension of these engineering tools to 3D biomaterials has created many new hydrogel and nanofiber scaffolds technologies that are being used to design in vitro experiments with more physiologically relevant conditions. Researchers are beginning to study complex cell functions in 3D, however, there is a need for biomaterials systems that provide fine control over the nanoscale presentation of bioactive ligands in 3D. Additionally, there is a need for 2- and 3D techniques that can control the nanoscale presentation of multiple bioactive ligands and the temporal changes in cellular microenvironment. PMID:21451238

Traceable nanoscale measurement at NML-SIRIM

NASA Astrophysics Data System (ADS)

Dahlan, Ahmad M.; Abdul Hapip, A. I.

2012-06-01

The role of national metrology institute (NMI) has always been very crucial in national technology development. One of the key activities of the NMI is to provide traceable measurement in all parameters under the International System of Units (SI). Dimensional measurement where size and shape are two important features investigated, is one of the important area covered by NMIs. To support the national technology development, particularly in manufacturing sectors and emerging technology such nanotechnology, the National Metrology Laboratory, SIRIM Berhad (NML-SIRIM), has embarked on a project to equip Malaysia with state-of-the-art nanoscale measurement facility with the aims of providing traceability of measurement at nanoscale. This paper will look into some of the results from current activities at NML-SIRIM related to measurement at nanoscale particularly on application of atomic force microscope (AFM) and laser based sensor in dimensional measurement. Step height standards of different sizes were measured using AFM and laser-based sensors. These probes are integrated into a long-range nanoscale measuring machine traceable to the international definition of the meter thus ensuring their traceability. Consistency of results obtained by these two methods will be discussed and presented. Factors affecting their measurements as well as their related uncertainty of measurements will also be presented.

Neuromorphic computing with nanoscale spintronic oscillators.

PubMed

Torrejon, Jacob; Riou, Mathieu; Araujo, Flavio Abreu; Tsunegi, Sumito; Khalsa, Guru; Querlioz, Damien; Bortolotti, Paolo; Cros, Vincent; Yakushiji, Kay; Fukushima, Akio; Kubota, Hitoshi; Yuasa, Shinji; Stiles, Mark D; Grollier, Julie

2017-07-26

Neurons in the brain behave as nonlinear oscillators, which develop rhythmic activity and interact to process information. Taking inspiration from this behaviour to realize high-density, low-power neuromorphic computing will require very large numbers of nanoscale nonlinear oscillators. A simple estimation indicates that to fit 10 8 oscillators organized in a two-dimensional array inside a chip the size of a thumb, the lateral dimension of each oscillator must be smaller than one micrometre. However, nanoscale devices tend to be noisy and to lack the stability that is required to process data in a reliable way. For this reason, despite multiple theoretical proposals and several candidates, including memristive and superconducting oscillators, a proof of concept of neuromorphic computing using nanoscale oscillators has yet to be demonstrated. Here we show experimentally that a nanoscale spintronic oscillator (a magnetic tunnel junction) can be used to achieve spoken-digit recognition with an accuracy similar to that of state-of-the-art neural networks. We also determine the regime of magnetization dynamics that leads to the greatest performance. These results, combined with the ability of the spintronic oscillators to interact with each other, and their long lifetime and low energy consumption, open up a path to fast, parallel, on-chip computation based on networks of oscillators.

Trials and tribulations of carotid artery stenting: The Interventionalists' perspective on SAPPHIRE, EVA-3S, and SPACE Trials.

PubMed

Harjai, Kishore J; Mehta, Rajendra H

2007-10-01

Three recently completed randomized studies of carotid artery stenting (CAS) versus endarterectomy-Stenting and Angioplasty with Protection in Patients at High Risk for Endarterectomy (SAPPHIRE), Endarterectomy versus Stenting in Patients with Symptomatic Severe Carotid Stenosis (EVA-3S), and Stent-Supported Percutaneous Angioplasty of the Carotid Artery versus Endarterectomy (SPACE)-reached vividly different conclusions about the safety of stenting versus endarterectomy. The methodologies of these studies differed from each other in many respects. In an attempt to explain the disparate results of SAPPHIRE, EVA-3S, and SPACE, this focused review compares and contrasts these studies, with specific reference to inclusion and exclusion criteria, technical considerations, and the experience level of the interventional operators.

Bench-scale synthesis of nanoscale materials

NASA Technical Reports Server (NTRS)

Buehler, M. F.; Darab, J. G.; Matson, D. W.; Linehan, J. C.

1994-01-01

A novel flow-through hydrothermal method used to synthesize nanoscale powders is introduced by Pacific Northwest Laboratory. The process, Rapid Thermal Decomposition of precursors in Solution (RTDS), uniquely combines high-pressure and high-temperature conditions to rapidly form nanoscale particles. The RTDS process was initially demonstrated on a laboratory scale and was subsequently scaled up to accommodate production rates attractive to industry. The process is able to produce a wide variety of metal oxides and oxyhydroxides. The powders are characterized by scanning and transmission electron microscopic methods, surface-area measurements, and x-ray diffraction. Typical crystallite sizes are less than 20 nanometers, with BET surface areas ranging from 100 to 400 sq m/g. A description of the RTDS process is presented along with powder characterization results. In addition, data on the sintering of nanoscale ZrO2 produced by RTDS are included.

Final EDP Ti: sapphire amplifiers for ELI project

NASA Astrophysics Data System (ADS)

Chvykov, Vladimir; Kalashnikov, Mikhail; Osvay, Károly

2015-05-01

Recently several ultrahigh intensity Chirped Pulse Amplification (CPA) laser systems have reached petawatt output powers [1, 2] setting the next milestone at tens or even hundreds petawatts for the next three to ten years [3, 4]. These remarkable results were reached when laser amplifiers (opposite to Optical Parametric Amplification (OPA) [5]) were used as final ones and from them Ti:Sapphire crystals supposed to be the working horses as well in the future design of these laser systems. Nevertheless, the main limitation that arises on the path toward ultrahigh output power and intensity is the restriction on the pumping and extraction energy imposed by Transverse Amplified Spontaneous Emission (TASE) [6] and/or transverse parasitic generation (TPG) [7] within the large aperture of the disc-shape amplifier volume.

Temporal intracavity detection of parasitic infrared absorption in Ti:Sapphire lasers

NASA Astrophysics Data System (ADS)

Deleva, A. D.; Peshev, Z. Y.; Aneva, Z. I.

1993-12-01

An intracavity technique with temporal sensitivity to optical losses is used to detect parasitic infrared absorption (PIRA) in Ti:sapphire crystals with high active-center concentrations. By means of comparative analysis, re-emission is established of part of the parasitically absorbed energy back into the laser action channel. A method is proposed for approximate quantitative determination of the relative part of re-emitting PIRA-centers with respect to their total number; for the highly-doped crystal described, it is estimated at about 11%.

Hybrid strategies for nanolithography and chemical patterning

NASA Astrophysics Data System (ADS)

Srinivasan, Charan

Remarkable technological advances in photolithography have extended patterning to the sub-50-nm regime. However, because photolithography is a top-down approach, it faces substantial technological and economic challenges in maintaining the downward scaling trends of feature sizes below 30 nm. Concurrently, fundamental research on chemical self-assembly has enabled the path to access molecular length scales. The key to the success of photolithography is its inherent economies of scale, which justify the large capital investment for its implementation. In this thesis research, top-down and bottom-up approaches have been combined synergistically, and these hybrid strategies have been employed in applications that do not have the economies of scale found in semiconductor chip manufacturing. The specific instances of techniques developed here include molecular-ruler lithography and a series of nanoscale chemical patterning methods. Molecular-ruler lithography utilizes self-assembled multilayered films as a sidewall spacer on initial photolithographically patterned gold features (parent) to place a second-generation feature (daughter) in precise proximity to the parent. The parent-daughter separation, which is on the nanometer length scale, is defined by the thickness of the molecular-ruler resist. Analogous to protocols followed in industry to evaluate lithographic performance, electrical test-pad structures were designed to interrogate the nanostructures patterned by molecular-ruler nanolithography, failure modes creating electrical shorts were mapped to each lithographic step, and subsequent lithographic optimization was performed to pattern nanoscale devices with excellent electrical performance. The optimized lithographic processes were applied to generate nanoscale devices such as nanowires and thin-film transistors (TFTs). Metallic nanowires were patterned by depositing a tertiary generation material in the nanogap and surrounding micron-scale regions, and then

Nanoscale electrode arrays produced with microscale lithographic techniques for use in biomedical sensing applications.

PubMed

Terry, Jonathan G; Schmüser, Ilka; Underwood, Ian; Corrigan, Damion K; Freeman, Neville J; Bunting, Andrew S; Mount, Andrew R; Walton, Anthony J

2013-12-01

A novel technique for the production of nanoscale electrode arrays that uses standard microfabrication processes and micron-scale photolithography is reported here in detail. These microsquare nanoband edge electrode (MNEE) arrays have been fabricated with highly reproducible control of the key array dimensions, including the size and pitch of the individual elements and, most importantly, the width of the nanoband electrodes. The definition of lateral features to nanoscale dimensions typically requires expensive patterning techniques that are complex and low-throughput. However, the fabrication methodology used here relies on the fact that vertical dimensions (i.e. layer thicknesses) have long been manufacturable at the nanoscale using thin film deposition techniques that are well established in mainstream microelectronics. The authors report for the first time two aspects that highlight the particular suitability of these MNEE array systems for probe monolayer biosensing. The first is simulation, which shows the enhanced sensitivity to the redox reaction of the solution redox couple. The second is the enhancement of probe film functionalisation observed for the probe film model molecule, 6-mercapto-1-hexanol compared with microsquare electrodes. Such surface modification for specific probe layer biosensing and detection is of significance for a wide range of biomedical and other sensing and analytical applications.

Epitaxy of GaN in high aspect ratio nanoscale holes over silicon substrate

NASA Astrophysics Data System (ADS)

Wang, Kejia; Wang, Anqi; Ji, Qingbin; Hu, Xiaodong; Xie, Yahong; Sun, Ying; Cheng, Zhiyuan

2017-12-01

Dislocation filtering in gallium nitride (GaN) by epitaxial growth through patterned nanoscale holes is studied. GaN grown from extremely high aspect ratio holes by metalorganic chemical vapor deposition is examined by transmission electron microscopy and high-resolution transmission electron microscopy. This selective area epitaxial growth method with a reduced epitaxy area and an increased depth to width ratio of holes leads to effective filtering of dislocations within the hole and improves the quality of GaN significantly.

YBCO High-Temperature Superconducting Filters on M-Plane Sapphire Substrates

NASA Technical Reports Server (NTRS)

Sabataitis, J. C.; Mueller, C. H.; Miranda, F. A.; Warner, J.; Bhasin, K. B.

1996-01-01

Since the discovery of High Temperature Superconductors (HTS) in 1986, microwave circuits have been demonstrated using HTS films on various substrates. These HTS-based circuits have proven to operate with less power loss than their metallic film counterparts at 77 K. This translates into smaller and lighter microwave circuits for space communication systems such as multiplexer filter banks. High quality HTS films have conventionally been deposited on lanthanum aluminate (LaAlO3) substrates. However, LaAlO3 has a relative dielectric constant (epsilon(sub r)) of 24. With a epsilon(sub r) approx. 9.4-11.6, sapphire (Al2O3) would be a preferable substrate for the fabrication of HTS-based components since the lower dielectric constant would permit wider microstrip lines to be used in filter design, since the lower dielectric constant would permit wider microstrip lines to be used for a given characteristic impedance (Z(sub 0)), thus lowering the insertion losses and increasing the power handling capabilities of the devices. We report on the fabrication and characterization of YBa2Cu3O(7-delta) (YBCO) on M-plane sapphire bandpass filters at 4.0 GHz. For a YBCO 'hairpin' filter, a minimum insertion loss of 0.5 dB was measured at 77 K as compared with 1.4 dB for its gold counterpart. In an 'edge-coupled' configuration, the insertion loss went down from 0.9 dB for the gold film to 0.8 dB for the YBCO film at the same temperature.

Nanoscale platforms for messenger RNA delivery.

PubMed

Li, Bin; Zhang, Xinfu; Dong, Yizhou

2018-05-04

Messenger RNA (mRNA) has become a promising class of drugs for diverse therapeutic applications in the past few years. A series of clinical trials are ongoing or will be initiated in the near future for the treatment of a variety of diseases. Currently, mRNA-based therapeutics mainly focuses on ex vivo transfection and local administration in clinical studies. Efficient and safe delivery of therapeutically relevant mRNAs remains one of the major challenges for their broad applications in humans. Thus, effective delivery systems are urgently needed to overcome this limitation. In recent years, numerous nanoscale biomaterials have been constructed for mRNA delivery in order to protect mRNA from extracellular degradation and facilitate endosomal escape after cellular uptake. Nanoscale platforms have expanded the feasibility of mRNA-based therapeutics, and enabled its potential applications to protein replacement therapy, cancer immunotherapy, therapeutic vaccines, regenerative medicine, and genome editing. This review focuses on recent advances, challenges, and future directions in nanoscale platforms designed for mRNA delivery, including lipid and lipid-derived nanoparticles, polymer-based nanoparticles, protein derivatives mRNA complexes, and other types of nanomaterials. This article is categorized under: Nanotechnology Approaches to Biology > Nanoscale Systems in Biology Biology-Inspired Nanomaterials > Lipid-Based Structures Biology-Inspired Nanomaterials > Nucleic Acid-Based Structures. © 2018 Wiley Periodicals, Inc.

Frictional interactions in forming processes: New studies with transparent sapphire strip-drawing dies

NASA Astrophysics Data System (ADS)

Rao, R. S.; Lu, C. Y.; Wright, P. K.; Devenpeck, M. L.; Richmond, O.; Appleby, E. J.

1982-05-01

This research is concerned with the frictional interactions at the toolwork interfaces in the machining and strip-drawing processes. A novel feature is that transparent sapphire (single crystal Al2O3) is being used as the tool and die material. This allows the tribological features of the interface to be directly observed and recorded on movie-film. These qualitative studies provide information on the role of lubricants. In addition, techniques are being developed to quantify the velocity gradient along the interface. For example, in the drawing work it has been found that tracer markings (e.g. dye-spots), applied to the undrawn strip, remain intact during drawing and can be tracked along the sapphire/strip interface. Such data will be used as input to a finite-element, elasto-plastic-workhardening model of the deformation process. The latter can compute strip deformation characteristics, drawing forces and local coefficients of friction at the interface. Introductory results will be presented in this paper, obtained from drawing tin-plated mild steel with sapphire and cemented carbide dies. Drawing loads and die-separating forces will be presented and movie-films of the action of tracer markings at the interface shown. In order to demonstrate how this data can be used in an analysis of a large strain deformation process with friction, initial results from running the FIPDEF elasto-plastic code will be discussed. From a commercial viewpoint research on strip-drawing is of special interest to the can-making industry. From a physical viewpoint stripdrawing is of particular interest because it is a symmetrical, plane strain deformation and, in comparison with other metal processing operations, it is more readily modeled. However, until now the elasto-plastic codes that have been developed to predictively model drawing have had limitations: the most notable being that of quantifying the friction conditions at the die-work interface. Hence the specification of the

Modeling collective behavior of molecules in nanoscale direct deposition processes

NASA Astrophysics Data System (ADS)

Lee, Nam-Kyung; Hong, Seunghun

2006-03-01

We present a theoretical model describing the collective behavior of molecules in nanoscale direct deposition processes such as dip-pen nanolithography. We show that strong intermolecular interactions combined with nonuniform substrate-molecule interactions can produce various shapes of molecular patterns including fractal-like structures. Computer simulations reveal circular and starlike patterns at low and intermediate densities of preferentially attractive surface sites, respectively. At large density of such surface sites, the molecules form a two-dimensional invasion percolation cluster. Previous experimental results showing anisotropic patterns of various chemical and biological molecules correspond to the starlike regime [P. Manandhar et al., Phys. Rev. Lett. 90, 115505 (2003); J.-H. Lim and C. A. Mirkin, Adv. Mater. (Weinheim, Ger.) 14, 1474 (2002); D. L. Wilson et al., Proc. Natl. Acad. Sci. U.S.A. 98, 13660 (2001); M. Su et al., Appl. Phys. Lett. 84, 4200 (2004); R. McKendry et al., Nano Lett. 2, 713 (2002); H. Zhou et al., Appl. Surf. Sci. 236, 18 (2004); G. Agarwal et al., J. Am. Chem. Soc. 125, 580 (2003)].

Inscription of first order fiber Bragg gratings in sapphire fibers by 400 nm femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Elsmann, Tino; Habisreuther, Tobias; Graf, Albrecht; Rothhardt, Manfred; Bartelt, Hartmut

2013-05-01

We demonstrate the inscription of fiber Bragg gratings in single crystalline sapphire using the second harmonic of a Ti:Sa-amplified femtosecond laser system. With the laser wavelength of 400 nm first order gratings were fabricated. The interferometric inscription was performed out using the Talbot interferometer. This way, not only single gratings but also multiplexed sensor arrays were realized. For evaluating of the sensor signals an adapted multimodal interrogation setup was build up, because the sapphire fiber is an extreme multimodal air clad fiber. Due to the multimodal reflection spectrum, different peak functions have been tested to evaluate the thermal properties of the grating. The temperature sensors were tested for high temperature applications up to 1200°C with a thermal sensitivity in the order of 25 pm/K which is more than the doubled of that one reached with Bragg gratings in conventional silica fibers.

Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire.

PubMed

Mezzadri, Francesco; Calestani, Gianluca; Boschi, Francesco; Delmonte, Davide; Bosi, Matteo; Fornari, Roberto

2016-11-21

The crystal structure and ferroelectric properties of ε-Ga 2 O 3 deposited by low-temperature MOCVD on (0001)-sapphire were investigated by single-crystal X-ray diffraction and the dynamic hysteresis measurement technique. A thorough investigation of this relatively unknown polymorph of Ga 2 O 3 showed that it is composed of layers of both octahedrally and tetrahedrally coordinated Ga 3+ sites, which appear to be occupied with a 66% probability. The refinement of the crystal structure in the noncentrosymmetric space group P6 3 mc pointed out the presence of uncompensated electrical dipoles suggesting ferroelectric properties, which were finally demonstrated by independent measurements of the ferroelectric hysteresis. A clear epitaxial relation is observed with respect to the c-oriented sapphire substrate, with the Ga 2 O 3 [10-10] direction being parallel to the Al 2 O 3 direction [11-20], yielding a lattice mismatch of about 4.1%.

Scalable maskless patterning of nanostructures using high-speed scanning probe arrays

NASA Astrophysics Data System (ADS)

Chen, Chen; Akella, Meghana; Du, Zhidong; Pan, Liang

2017-08-01

Nanoscale patterning is the key process to manufacture important products such as semiconductor microprocessors and data storage devices. Many studies have shown that it has the potential to revolutionize the functions of a broad range of products for a wide variety of applications in energy, healthcare, civil, defense and security. However, tools for mass production of these devices usually cost tens of million dollars each and are only affordable to the established semiconductor industry. A new method, nominally known as "pattern-on-the- y", that involves scanning an array of optical or electrical probes at high speed to form nanostructures and offers a new low-cost approach for nanoscale additive patterning. In this paper, we report some progress on using this method to pattern self-assembled monolayers (SAMs) on silicon substrate. We also functionalize the substrate with gold nanoparticle based on the SAM to show the feasibility of preparing amphiphilic and multi-functional surfaces.

Nanoscale imaging of photocurrent enhancement by resonator array photovoltaic coatings.

PubMed

Ha, Dongheon; Yoon, Yohan; Zhitenev, Nikolai B

2018-04-06

Nanoscale surface patterning commonly used to increase absorption of solar cells can adversely impact the open-circuit voltage due to increased surface area and recombination. Here, we demonstrate absorptivity and photocurrent enhancement using silicon dioxide (SiO 2 ) nanosphere arrays on a gallium arsenide (GaAs) solar cell that do not require direct surface patterning. Due to the combined effects of thin-film interference and whispering gallery-like resonances within nanosphere arrays, there is more than 20% enhancement in both absorptivity and photocurrent. To determine the effect of the resonance coupling between nanospheres, we perform a scanning photocurrent microscopy based on a near-field scanning optical microscopy measurement and find a substantial local photocurrent enhancement. The nanosphere-based antireflection coating (ARC), made by the Meyer rod rolling technique, is a scalable and a room-temperature process; and, can replace the conventional thin-film-based ARCs requiring expensive high-temperature vacuum deposition.

Nanoscale imaging of photocurrent enhancement by resonator array photovoltaic coatings

NASA Astrophysics Data System (ADS)

Ha, Dongheon; Yoon, Yohan; Zhitenev, Nikolai B.

2018-04-01

Nanoscale surface patterning commonly used to increase absorption of solar cells can adversely impact the open-circuit voltage due to increased surface area and recombination. Here, we demonstrate absorptivity and photocurrent enhancement using silicon dioxide (SiO2) nanosphere arrays on a gallium arsenide (GaAs) solar cell that do not require direct surface patterning. Due to the combined effects of thin-film interference and whispering gallery-like resonances within nanosphere arrays, there is more than 20% enhancement in both absorptivity and photocurrent. To determine the effect of the resonance coupling between nanospheres, we perform a scanning photocurrent microscopy based on a near-field scanning optical microscopy measurement and find a substantial local photocurrent enhancement. The nanosphere-based antireflection coating (ARC), made by the Meyer rod rolling technique, is a scalable and a room-temperature process; and, can replace the conventional thin-film-based ARCs requiring expensive high-temperature vacuum deposition.

A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN

NASA Astrophysics Data System (ADS)

Haidet, Brian B.; Bryan, Isaac; Reddy, Pramod; Bryan, Zachary; Collazo, Ramón; Sitar, Zlatko

2015-06-01

Ohmic contacts to AlGaN grown on sapphire substrates have been previously demonstrated for various compositions of AlGaN, but contacts to AlGaN grown on native AlN substrates are more difficult to obtain. In this paper, a model is developed that describes current flow through contacts to Si-doped AlGaN. This model treats the current through reverse-biased Schottky barriers as a consequence of two different tunneling-dependent conduction mechanisms in parallel, i.e., Fowler-Nordheim emission and defect-assisted Frenkel-Poole emission. At low bias, the defect-assisted tunneling dominates, but as the potential across the depletion region increases, tunneling begins to occur without the assistance of defects, and the Fowler-Nordheim emission becomes the dominant conduction mechanism. Transfer length method measurements and temperature-dependent current-voltage (I-V) measurements of Ti/Al-based contacts to Si-doped AlGaN grown on sapphire and AlN substrates support this model. Defect-assisted tunneling plays a much larger role in the contacts to AlGaN on sapphire, resulting in nearly linear I-V characteristics. In contrast, contacts to AlGaN on AlN show limited defect-assisted tunneling appear to be only semi-Ohmic.

Reverse micelle synthesis of nanoscale metal containing catalysts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darab, J.G.; Fulton, J.L.; Linehan, J.C.

1993-03-01

The need for morphological control during the synthesis of catalyst precursor powders is generally accepted to be important. In the liquefaction of coal, for example, iron-bearing catalyst precursor particles containing individual crystallites with diameters in the 1-100 nanometer range are believed to achieve good dispersion through out the coal-solvent slurry during liquefaction 2 runs and to undergo chemical transformations to catalytically active iron sulfide phases. The production of the nanoscale powders described here employs the confining spherical microdomains comprising the aqueous phase of a modified reverse micelle (MRM) microemulsion system as nanoscale reaction vessels in which polymerization, electrochemical reduction andmore » precipitation of solvated salts can occur. The goal is to take advantage of the confining nature of micelles to kinetically hinder transformation processes which readily occur in bulk aqueous solution in order to control the morphology and phase of the resulting powder. We have prepared a variety of metal, alloy, and metal- and mixed metal-oxide nanoscale powders from appropriate MRM systems. Examples of nanoscale powders produced include Co, Mo-Co, Ni{sub 3}Fe, Ni, and various oxides and oxyhydroxides of iron. Here, we discuss the preparation and characterization of nickel metal (with a nickel oxide surface layer) and iron oxyhydroxide MRM nanoscale powders. We have used extended x-ray absorption fine structure (EXAFS) spectroscopy to study the chemical polymerization process in situ, x-ray diffraction (XRD), scanning and transmission electron microcroscopies (SEM and TEM), elemental analysis and structural modelling to characterize the nanoscale powders produced. The catalytic activity of these powders is currently being studied.« less

Spontaneous formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Trassoudaine, Agnès; Roche, Elissa; Bougerol, Catherine; André, Yamina; Avit, Geoffrey; Monier, Guillaume; Ramdani, Mohammed Réda; Gil, Evelyne; Castelluci, Dominique; Dubrovskii, Vladimir G.

2016-11-01

Spontaneous GaN/AlN core-shell nanowires with high crystal quality were synthesized on sapphire substrates by vapor-liquid-solid hydride vapor phase epitaxy (VLS-HVPE) without any voluntary aluminum source. Deposition of aluminum is difficult to achieve in this growth technique which uses metal-chloride gaseous precursors: the strong interaction between the AlCl gaseous molecules and the quartz reactor yields a huge parasitic nucleation on the walls of the reactor upstream the substrate. We open up an innovative method to produce GaN/AlN structures by HVPE, thanks to aluminum etching from the sapphire substrate followed by redeposition onto the sidewalls of the GaN core. The paper presents the structural characterization of GaN/AlN core-shell nanowires, speculates on the growth mechanism and discusses a model which describes this unexpected behavior.

Mechanical Behavior of Sapphire Reinforced Alumina Matrix Composites at Elevated Temperatures

NASA Technical Reports Server (NTRS)

Jaskowiak, Martha H.; Eldridge, Jeffrey I.; Setlock, John A.; Gyekenyesi, John Z.

1997-01-01

Zirconia coated sapphire reinforced alumina matrix composites have been tested both after heat treatment to 1400 C and at temperatures ranging from 800 C to 1200 C in. air. Interfacial shear stress has also been measured with fiber pushout tests performed in air at room temperature, 800 C and 1OOO C. Matrix crack spacing was measured for the tensile tested composites and used to estimate interfacial shear stress up to 1200 C. Electron microscopy was used to determine the source of fiber fracture and to study interfacial failure within the composite.

Sensing nitrous oxide with QCL-coupled silicon-on-sapphire ring resonators.

PubMed

Smith, Clinton J; Shankar, Raji; Laderer, Matthew; Frish, Michael B; Loncar, Marko; Allen, Mark G

2015-03-09

We report the initial evaluation of a mid-infrared QCL-coupled silicon-on-sapphire ring resonator gas sensor. The device probes the N(2)O 2241.79 cm(-1) optical transition (R23 line) in the ν(3) vibrational band. N(2)O concentration is deduced using a non-linear least squares fit, based on coupled-mode theory, of the change in ring resonator Q due to gas absorption losses in the evanescent portion of the waveguide optical mode. These early experiments demonstrated response to 5000 ppmv N(2)O.

Linearly polarized photoluminescence of anisotropically strained c-plane GaN layers on stripe-shaped cavity-engineered sapphire substrate

NASA Astrophysics Data System (ADS)

Kim, Jongmyeong; Moon, Daeyoung; Lee, Seungmin; Lee, Donghyun; Yang, Duyoung; Jang, Jeonghwan; Park, Yongjo; Yoon, Euijoon

2018-05-01

Anisotropic in-plane strain and resultant linearly polarized photoluminescence (PL) of c-plane GaN layers were realized by using a stripe-shaped cavity-engineered sapphire substrate (SCES). High resolution X-ray reciprocal space mapping measurements revealed that the GaN layers on the SCES were under significant anisotropic in-plane strain of -0.0140% and -0.1351% along the directions perpendicular and parallel to the stripe pattern, respectively. The anisotropic in-plane strain in the GaN layers was attributed to the anisotropic strain relaxation due to the anisotropic arrangement of cavity-incorporated membranes. Linearly polarized PL behavior such as the observed angle-dependent shift in PL peak position and intensity comparable with the calculated value based on k.p perturbation theory. It was found that the polarized PL behavior was attributed to the modification of valence band structures induced by anisotropic in-plane strain in the GaN layers on the SCES.

Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

DOE PAGES

Park, J.; Ahn, Y.; Tilka, J. A.; ...

2016-06-20

Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Furthermore, electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.

PREFACE: Superconductivity in ultrathin films and nanoscale systems Superconductivity in ultrathin films and nanoscale systems

NASA Astrophysics Data System (ADS)

Bianconi, Antonio; Bose, Sangita; Garcia-Garcia, Antonio Miguel

2012-12-01

The recent technological developments in the synthesis and characterization of high-quality nanostructures and developments in the theoretical techniques needed to model these materials, have motivated this focus section of Superconductor Science and Technology. Another motivation is the compelling evidence that all new superconducting materials, such as iron pnictides and chalcogenides, diborides (doped MgB2) and fullerides (alkali-doped C60 compounds), are heterostrucures at the atomic limit, such as the cuprates made of stacks of nanoscale superconducting layers intercalated by different atomic layers with nanoscale periodicity. Recently a great amount of interest has been shown in the role of lattice nano-architecture in controlling the fine details of Fermi surface topology. The experimental and theoretical study of superconductivity in the nanoscale started in the early 1960s, shortly after the discovery of the BCS theory. Thereafter there has been rapid progress both in experiments and the theoretical understanding of nanoscale superconductors. Experimentally, thin films, granular films, nanowires, nanotubes and single nanoparticles have all been explored. New quantum effects appear in the nanoscale related to multi-component condensates. Advances in the understanding of shape resonances or Fano resonances close to 2.5 Lifshitz transitions near a band edge in nanowires, 2D films and superlattices [1, 2] of these nanosized modules, provide the possibility of manipulating new quantum electronic states. Parity effects and shell effects in single, isolated nanoparticles have been reported by several groups. Theoretically, newer techniques based on solving Richardson's equation (an exact theory incorporating finite size effects to the BCS theory) numerically by path integral methods or solving the entire Bogoliubov-de Gennes equation in these limits have been attempted, which has improved our understanding of the mechanism of superconductivity in these confined

Adhesion and proliferation of OCT-1 osteoblast-like cells on micro- and nano-scale topography structured poly(L-lactide).

PubMed

Wan, Yuqing; Wang, Yong; Liu, Zhimin; Qu, Xue; Han, Buxing; Bei, Jianzhong; Wang, Shenguo

2005-07-01

The impact of the surface topography of polylactone-type polymer on cell adhesion was to be concerned because the micro-scale texture of a surface can provide a significant effect on the adhesion behavior of cells on the surface. Especially for the application of tissue engineering scaffold, the pore size could have an influence on cell in-growth and subsequent proliferation. Micro-fabrication technology was used to generate specific topography to investigate the relationship between the cells and surface. In this study the pits-patterned surfaces of polystyrene (PS) film with diameters 2.2 and 0.45 microm were prepared by phase-separation, and the corresponding scale islands-patterned PLLA surface was prepared by a molding technique using the pits-patterned PS as a template. The adhesion and proliferation behavior of OCT-1 osteoblast-like cells morphology on the pits- and islands-patterned surface were characterized by SEM observation, cell attachment efficiency measurement and MTT assay. The results showed that the cell adhesion could be enhanced on PLLA and PS surface with nano-scale and micro-scale roughness compared to the smooth surfaces of the PLLA and PS. The OCT-1 osteoblast-like cells could grow along the surface with two different size islands of PLLA and grow inside the micro-scale pits of the PS. However, the proliferation of cells on the micro- and nano-scale patterned surface has not been enhanced compared with the controlled smooth surface.

Reverse micelle synthesis of nanoscale metal containing catalysts. [Nickel metal (with a nickel oxide surface layer) and iron oxyhydroxide nanoscale powders

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darab, J.G.; Fulton, J.L.; Linehan, J.C.

1993-03-01

The need for morphological control during the synthesis of catalyst precursor powders is generally accepted to be important. In the liquefaction of coal, for example, iron-bearing catalyst precursor particles containing individual crystallites with diameters in the 1-100 nanometer range are believed to achieve good dispersion through out the coal-solvent slurry during liquefaction 2 runs and to undergo chemical transformations to catalytically active iron sulfide phases. The production of the nanoscale powders described here employs the confining spherical microdomains comprising the aqueous phase of a modified reverse micelle (MRM) microemulsion system as nanoscale reaction vessels in which polymerization, electrochemical reduction andmore » precipitation of solvated salts can occur. The goal is to take advantage of the confining nature of micelles to kinetically hinder transformation processes which readily occur in bulk aqueous solution in order to control the morphology and phase of the resulting powder. We have prepared a variety of metal, alloy, and metal- and mixed metal-oxide nanoscale powders from appropriate MRM systems. Examples of nanoscale powders produced include Co, Mo-Co, Ni[sub 3]Fe, Ni, and various oxides and oxyhydroxides of iron. Here, we discuss the preparation and characterization of nickel metal (with a nickel oxide surface layer) and iron oxyhydroxide MRM nanoscale powders. We have used extended x-ray absorption fine structure (EXAFS) spectroscopy to study the chemical polymerization process in situ, x-ray diffraction (XRD), scanning and transmission electron microcroscopies (SEM and TEM), elemental analysis and structural modelling to characterize the nanoscale powders produced. The catalytic activity of these powders is currently being studied.« less

Particle Line Assembly/Patterning by Microfluidic AC Electroosmosis

NASA Astrophysics Data System (ADS)

Lian, Meng; Islam, Nazmul; Wu, Jie

2006-04-01

Recently AC electroosmosis has attracted research interests worldwide. This paper is the first to investigate particle line assembly/patterning by AC electroosmosis. Since AC electroosmotic force has no dependence on particle sizes, this technique is particularly useful for manipulating nanoscale substance, and hopefully constructs functional nanoscale devices. Two types of ACEO devices, in the configurations of planar interdigitated electrodes and parallel plate electrodes, and a biased ACEO technique are studied, which provides added flexibility in particle manipulation and line assembly. The paper also investigates the effects of electrical field distributions on generating microflows for particle assembly. The results are corroborated experimentally.

78 FR 56691 - Sapphire Power Marketing LLC; Supplemental Notice That Initial Market-Based Rate Filing Includes...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-09-13

... Power Marketing LLC; Supplemental Notice That Initial Market-Based Rate Filing Includes Request for... Sapphire Power Marketing LLC's application for market-based rate authority, with an accompanying rate... submission of protests and interventions in lieu of paper, using the FERC Online links at http://www.ferc.gov...

5-nJ Femtosecond Ti3+:sapphire laser pumped with a single 1 W green diode

NASA Astrophysics Data System (ADS)

Muti, Abdullah; Kocabas, Askin; Sennaroglu, Alphan

2018-05-01

We report a Kerr-lens mode-locked, extended-cavity femtosecond Ti3+:sapphire laser directly pumped at 520 nm with a 1 W AlInGaN green diode. To obtain energy scaling, the short x-cavity was extended with a q-preserving multi-pass cavity to reduce the pulse repetition rate to 5.78 MHz. With 880 mW of incident pump power, we obtained as high as 90 mW of continuous-wave output power from the short cavity by using a 3% output coupler. In the Kerr-lens mode-locked regime, the extended cavity produced nearly transform-limited 95 fs pulses at 776 nm. The resulting energy and peak power of the pulses were 5.1 nJ and 53 kW, respectively. To our knowledge, this represents the highest pulse energy directly obtained to date from a mode-locked, single-diode-pumped Ti3+:sapphire laser.

Autonomous cryogenic sapphire oscillators employing low vibration pulse-tube cryocoolers at NMIJ

NASA Astrophysics Data System (ADS)

Ikegami, Takeshi; Watabe, Ken-ichi; Yanagimachi, Shinya; Takamizawa, Akifumi; Hartnett, John G.

2016-06-01

Two liquid-helium-cooled cryogenic sapphire-resonator oscillators (CSOs), have been modified to operate using cryo-refrigerators and low-vibration cryostats. The Allan deviation of the first CSO was evaluated to be better than 2 x 10-15 for averaging times of 1 s to 30 000 s, which is better than that of the original liquid helium cooled CSO. The Allan deviation of the second CSO is better than 4 x 10-15 from 1 s to 6 000 s averaging time.

A Robust and Engineerable Self-Assembling Protein Template for the Synthesis and Patterning of Ordered Nanoparticle Arrays

NASA Technical Reports Server (NTRS)

McMillan, R. Andrew; Howard, Jeanie; Zaluzec, Nestor J.; Kagawa, Hiromi K.; Li, Yi-Fen; Paavola, Chad D.; Trent, Jonathan D.

2004-01-01

Self-assembling biomolecules that form highly ordered structures have attracted interest as potential alternatives to conventional lithographic processes for patterning materials. Here we introduce a general technique for patterning materials on the nanoscale using genetically modified protein cage structures called chaperonins that self-assemble into crystalline templates. Constrained chemical synthesis of transition metal nanoparticles is specific to templates genetically functionalized with poly-Histidine sequences. These arrays of materials are ordered by the nanoscale structure of the crystallized protein. This system may be easily adapted to pattern a variety of materials given the rapidly growing list of peptide sequences selected by screening for specificity for inorganic materials.

Dynamic structural disorder in supported nanoscale catalysts

NASA Astrophysics Data System (ADS)

Rehr, J. J.; Vila, F. D.

2014-04-01

We investigate the origin and physical effects of "dynamic structural disorder" (DSD) in supported nano-scale catalysts. DSD refers to the intrinsic fluctuating, inhomogeneous structure of such nano-scale systems. In contrast to bulk materials, nano-scale systems exhibit substantial fluctuations in structure, charge, temperature, and other quantities, as well as large surface effects. The DSD is driven largely by the stochastic librational motion of the center of mass and fluxional bonding at the nanoparticle surface due to thermal coupling with the substrate. Our approach for calculating and understanding DSD is based on a combination of real-time density functional theory/molecular dynamics simulations, transient coupled-oscillator models, and statistical mechanics. This approach treats thermal and dynamic effects over multiple time-scales, and includes bond-stretching and -bending vibrations, and transient tethering to the substrate at longer ps time-scales. Potential effects on the catalytic properties of these clusters are briefly explored. Model calculations of molecule-cluster interactions and molecular dissociation reaction paths are presented in which the reactant molecules are adsorbed on the surface of dynamically sampled clusters. This model suggests that DSD can affect both the prefactors and distribution of energy barriers in reaction rates, and thus can significantly affect catalytic activity at the nano-scale.

Probing and manipulating magnetization at the nanoscale

NASA Astrophysics Data System (ADS)

Samarth, Nitin

2012-02-01

Combining semiconductors with magnetism in hetero- and nano-structured geometries provides a powerful means of exploring the interplay between spin-dependent transport and nanoscale magnetism. We describe two recent studies in this context. First, we use spin-dependent transport in ferromagnetic semiconductor thin films to provide a new window into nanoscale magnetism [1]: here, we exploit the large anomalous Hall effect in a ferromagnetic semiconductor as a nanoscale probe of the reversible elastic behavior of magnetic domain walls and gain insight into regimes of domain wall behavior inaccessible to more conventional optical techniques. Next, we describe novel ways to create self-assembled hybrid semiconductor/ferromagnet core-shell nanowires [2] and show how magnetoresistance measurements in single nanowires, coupled with micromagnetic simulations, can provide detailed insights into the magnetization reversal process in nanoscale ferromagnets [3]. The work described here was carried out in collaboration with Andrew Balk, Jing Liang, Nicholas Dellas, Mark Nowakowski, David Rench, Mark Wilson, Roman Engel-Herbert, Suzanne Mohney, Peter Schiffer and David Awschalom. This work is supported by ONR, NSF and the NSF-MRSEC program.[4pt] [1] A. L. Balk et al., Phys. Rev.Lett. 107, 077205 (2011).[0pt] [2] N. J. Dellas et al., Appl. Phys. Lett. 97, 072505 (2010).[0pt] [3] J. Liang et al., in preparation.

Method to determine thermal profiles of nanoscale circuitry

DOEpatents

Zettl, Alexander K; Begtrup, Gavi E

2013-04-30

A platform that can measure the thermal profiles of devices with nanoscale resolution has been developed. The system measures the local temperature by using an array of nanoscale thermometers. This process can be observed in real time using a high resolution imagining technique such as electron microscopy. The platform can operate at extremely high temperatures.

Nanoscale Membrane Curvature detected by Polarized Localization Microscopy

NASA Astrophysics Data System (ADS)

Kelly, Christopher; Maarouf, Abir; Woodward, Xinxin

Nanoscale membrane curvature is a necessary component of countless cellular processes. Here we present Polarized Localization Microscopy (PLM), a super-resolution optical imaging technique that enables the detection of nanoscale membrane curvature with order-of-magnitude improvements over comparable optical techniques. PLM combines the advantages of polarized total internal reflection fluorescence microscopy and fluorescence localization microscopy to reveal single-fluorophore locations and orientations without reducing localization precision by point spread function manipulation. PLM resolved nanoscale membrane curvature of a supported lipid bilayer draped over polystyrene nanoparticles on a glass coverslip, thus creating a model membrane with coexisting flat and curved regions and membrane radii of curvature as small as 20 nm. Further, PLM provides single-molecule trajectories and the aggregation of curvature-inducing proteins with super-resolution to reveal the correlated effects of membrane curvature, dynamics, and molecular sorting. For example, cholera toxin subunit B has been observed to induce nanoscale membrane budding and concentrate at the bud neck. PLM reveals a previously hidden and critical information of membrane topology.

Tuning the sapphire EFG process to the growth of Al2O3/YAG/ZrO2:Y eutectic

NASA Astrophysics Data System (ADS)

Carroz, L.; Duffar, T.

2018-05-01

In this work, a model is proposed, in order to analytically study the working point of the Edge defined Film-fed Growth (EFG) pulling of crystal plates. The model takes into account the heat equilibrium at the interface and the pressure equilibrium across the meniscus. It is validated on an industrial device dedicated to the pulling of sapphire ribbons. Then, the model is applied to pulling ceramic alloy plates, of the ternary eutectic Al2O3/YAG/ZrO2:Y. This allowed understanding the experimental difficulties of pulling this new material and suggested improvements of the control software. From these results, pulling net shaped ceramic alloy plates was successful in the same industrial equipment as used for sapphire.

Nanoscale measurement of Nernst effect in two-dimensional charge density wave material 1T-TaS 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Stephen M.; Luican-Mayer, Adina; Bhattacharya, Anand

Advances in nanoscale material characterization on two-dimensional van der Waals layered materials primarily involve their optical and electronic properties. The thermal properties of these materials are harder to access due to the difficulty of thermal measurements at the nanoscale. In this work, we create a nanoscale magnetothermal device platform to access the basic out-of-plane magnetothermal transport properties of ultrathin van der Waals materials. Specifically, the Nernst effect in the charge density wave transition metal dichalcogenide 1T-TaS 2 is examined on nano-thin flakes in a patterned device structure. It is revealed that near the commensurate charge density wave (CCDW) to nearlymore » commensurate charge density wave (NCCDW) phase transition, the polarity of the Nernst effect changes. Since the Nernst effect is especially sensitive to changes in the Fermi surface, this suggests that large changes are occurring in the out-of-plane electronic structure of 1T-TaS 2, which are otherwise unresolved in just in-plane electronic transport measurements. This may signal a coherent evolution of out-of-plane stacking in the CCDW! NCCDW transition.« less

Optical transmittance investigation of 1-keV ion-irradiated sapphire crystals as potential VUV to NIR window materials of fusion reactors

NASA Astrophysics Data System (ADS)

Iwano, Keisuke; Yamanoi, Kohei; Iwasa, Yuki; Mori, Kazuyuki; Minami, Yuki; Arita, Ren; Yamanaka, Takuma; Fukuda, Kazuhito; Empizo, Melvin John F.; Takano, Keisuke; Shimizu, Toshihiko; Nakajima, Makoto; Yoshimura, Masashi; Sarukura, Nobuhiko; Norimatsu, Takayoshi; Hangyo, Masanori; Azechi, Hiroshi; Singidas, Bess G.; Sarmago, Roland V.; Oya, Makoto; Ueda, Yoshio

2016-10-01

We investigate the optical transmittances of ion-irradiated sapphire crystals as potential vacuum ultraviolet (VUV) to near-infrared (NIR) window materials of fusion reactors. Under potential conditions in fusion reactors, sapphire crystals are irradiated with hydrogen (H), deuterium (D), and helium (He) ions with 1-keV energy and ˜ 1020-m-2 s-1 flux. Ion irradiation decreases the transmittances from 140 to 260 nm but hardly affects the transmittances from 300 to 1500 nm. H-ion and D-ion irradiation causes optical absorptions near 210 and 260 nm associated with an F-center and an F+-center, respectively. These F-type centers are classified as Schottky defects that can be removed through annealing above 1000 K. In contrast, He-ion irradiation does not cause optical absorptions above 200 nm because He-ions cannot be incorporated in the crystal lattice due to the large ionic radius of He-ions. Moreover, the significant decrease in transmittance of the ion-irradiated sapphire crystals from 140 to 180 nm is related to the light scattering on the crystal surface. Similar to diamond polishing, ion irradiation modifies the crystal surface thereby affecting the optical properties especially at shorter wavelengths. Although the transmittances in the VUV wavelengths decrease after ion irradiation, the transmittances can be improved through annealing above 1000 K. With an optical transmittance in the VUV region that can recover through simple annealing and with a high transparency from the ultraviolet (UV) to the NIR region, sapphire crystals can therefore be used as good optical windows inside modern fusion power reactors in terms of light particle loadings of hydrogen isotopes and helium.

Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xiao-Hang, E-mail: xli@gatech.edu, E-mail: dupuis@gatech.edu; Kao, Tsung-Ting; Satter, Md. Mahbub

2015-01-26

We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm{sup 2}, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-fieldmore » split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.« less

Nanopatterns by phase separation of patterned mixed polymer monolayers

DOEpatents

Huber, Dale L; Frischknecht, Amalie

2014-02-18

Micron-size and sub-micron-size patterns on a substrate can direct the self-assembly of surface-bonded mixed polymer brushes to create nanoscale patterns in the phase-separated mixed polymer brush. The larger scale features, or patterns, can be defined by a variety of lithographic techniques, as well as other physical and chemical processes including but not limited to etching, grinding, and polishing. The polymer brushes preferably comprise vinyl polymers, such as polystyrene and poly(methyl methacrylate).

Dopant atoms as quantum components in silicon nanoscale devices

NASA Astrophysics Data System (ADS)

Zhao, Xiaosong; Han, Weihua; Wang, Hao; Ma, Liuhong; Li, Xiaoming; Zhang, Wang; Yan, Wei; Yang, Fuhua

2018-06-01

Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore's law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics. Project supported by National Key R&D Program of China (No. 2016YFA0200503).

Talin determines the nanoscale architecture of focal adhesions.

PubMed

Liu, Jaron; Wang, Yilin; Goh, Wah Ing; Goh, Honzhen; Baird, Michelle A; Ruehland, Svenja; Teo, Shijia; Bate, Neil; Critchley, David R; Davidson, Michael W; Kanchanawong, Pakorn

2015-09-01

Insight into how molecular machines perform their biological functions depends on knowledge of the spatial organization of the components, their connectivity, geometry, and organizational hierarchy. However, these parameters are difficult to determine in multicomponent assemblies such as integrin-based focal adhesions (FAs). We have previously applied 3D superresolution fluorescence microscopy to probe the spatial organization of major FA components, observing a nanoscale stratification of proteins between integrins and the actin cytoskeleton. Here we combine superresolution imaging techniques with a protein engineering approach to investigate how such nanoscale architecture arises. We demonstrate that talin plays a key structural role in regulating the nanoscale architecture of FAs, akin to a molecular ruler. Talin diagonally spans the FA core, with its N terminus at the membrane and C terminus demarcating the FA/stress fiber interface. In contrast, vinculin is found to be dispensable for specification of FA nanoscale architecture. Recombinant analogs of talin with modified lengths recapitulated its polarized orientation but altered the FA/stress fiber interface in a linear manner, consistent with its modular structure, and implicating the integrin-talin-actin complex as the primary mechanical linkage in FAs. Talin was found to be ∼97 nm in length and oriented at ∼15° relative to the plasma membrane. Our results identify talin as the primary determinant of FA nanoscale organization and suggest how multiple cellular forces may be integrated at adhesion sites.

Femtosecond optical parametric amplification in BBO and KTA driven by a Ti:sapphire laser for LIDT testing and diagnostic development

NASA Astrophysics Data System (ADS)

Meadows, Alexander R.; Cupal, Josef; Hříbek, Petr; Durák, Michal; Kramer, Daniel; Rus, Bedřich

2017-05-01

We present the design of a collinear femtosecond optical parametric amplification (OPA) system producing a tunable output at wavelengths between 1030 nm and 1080 nm from a Ti:Sapphire pump laser at a wavelength of 795 nm. Generation of a supercontinuum seed pulse is followed by one stage of amplification in Beta Barium Borate (BBO) and two stages of amplification in Potassium Titanyle Arsenate (KTA), resulting in a 225 μJ output pulse with a duration of 90 fs. The output of the system has been measured by self-referenced spectral interferometry to yield the complete spectrum and spectral phase of the pulse. When compared to KTP, the greater transparency of KTA in the spectral range from 3 - 4 μm allows for reduced idler absorption and enhanced gain from the OPA process when it is pumped by the fundamental frequency of a Ti:sapphire laser. In turn, the use of the Ti:sapphire fundamental at 795 nm as a pump improves the efficiency with which light can be converted to wavelengths between 1030 nm and 1080 nm and subsequently used to test components for Nd-based laser systems. This OPA system is operated at 1 kHz for diagnostic development and laser-induced damage threshold testing of optical components for the ELI-Beamlines project.

A Compact Ti:Sapphire Laser With its Third Harmonic Generation (THG) for an Airborne Ozone Differential Absorption Lidar (DIAL) Transmitter

NASA Technical Reports Server (NTRS)

Chen, Songsheng; Storm, Mark E.; Marsh, Waverly D.; Petway, Larry B.; Edwards, William C.; Barnes, James C.

2000-01-01

A compact and high-pulse-energy Ti:Sapphire laser with its Third Harmonic Generation (THG) has been developed for an airborne ozone differential absorption lidar (DIAL) to study the distributions and concentrations of the ozone throughout the troposphere. The Ti:Sapphire laser, pumped by a frequency-doubled Nd:YAG laser and seeded by a single mode diode laser, is operated either at 867 nm or at 900 nm with a pulse repetition frequency of 20 Hz. High energy laser pulses (more than 110 mJ/pulse) at 867 nm or 900 nm with a desired beam quality have been achieved and utilized to generate its third harmonic at 289nm or 300nm, which are on-line and off-line wavelengths of an airborne ozone DIAL. After being experimentally compared with Beta-Barium Borate (beta - BaB2O4 or BBO) nonlinear crystals, two Lithium Triborate (LBO) crystals (5 x 5 x 20 cu mm) are selected for the Third Harmonic Generation (THG). In this paper, we report the Ti:Sapphire laser at 900 nm and its third harmonic at 300 nm. The desired high ultraviolet (UV) output pulse energy is more than 30 mJ at 300 nm and the energy conversion efficiency from 900 nm to 300 nm is 30%.

EDITORIAL: Mastering matter at the nanoscale Mastering matter at the nanoscale

NASA Astrophysics Data System (ADS)

Forchel, Alfred

2009-10-01

In the early 1980s, the development of scanning probe techniques gave scientists a titillating view of surfaces with nanometre resolution, igniting activity in research at the nanoscale. Images at unprecedented resolution were unveiled with the aid of various types of nanosized tips, including the scanning tunnelling (Binnig G, Rohrer H, Gerber C and Weibel E 1982 Appl. Phys. Lett. 40 178-80) the atomic force (Binnig G, Quate C F and Gerber C 1986 Phys. Rev. Lett. 56 930-3) and the near-field scanning microscopes (Dürig U, Pohl D W and Rohner F 1986 J. Appl. Phys. 59 3318-27). From the magnitude of tunnelling currents between conductive surfaces and van der Waals forces between dielectrics to the non-propagating evanescent fields at illuminated surfaces, a range of signal responses were harnessed enabling conductive, dielectric and even biological systems to be imaged. But it may be argued that it was the ability to manipulate matter at the nanoscale that really empowered nanotechnology. From the inception of the scanning probe revolution, these probes used to image nanostructures were also discovered to be remarkable tools for the manipulation of nanoparticles. Insights into the mechanism behind such processes were reported by a team of researchers at UCLA over ten years ago in 1998 (Baur C et al 1998 Nanotechnology 9 360-4). In addition, lithography and etching methods of patterning continue to evolve into ever more sophisticated techniques for exerting design over the structure of matter at the nanoscale. These so-called top-down methods, such as photolithography, electron-beam lithography and nanoimprint lithography, now provide control over features with a resolution of a few nanometres. Bottom-up fabrication techniques that exploit the self-assembly of constituents into desired structures have also stimulated extensive research. These techniques, such as the electrochemically assembled quantum-dot arrays reported by a team of US reasearchers over ten years

Airborne particulate concentration during laser hair removal: A comparison between cold sapphire with aqueous gel and cryogen skin cooling.

PubMed

Ross, Edward V; Chuang, Gary S; Ortiz, Arisa E; Davenport, Scott A

2018-04-01

High concentrations of sub-micron nanoparticles have been shown to be released during laser hair removal (LHR) procedures. These emissions pose a potential biohazard to healthcare workers that have prolonged exposure to LHR plume. We sought to demonstrate that cold sapphire skin cooling done in contact mode might suppress plume dispersion during LHR. A total of 11 patients were recruited for laser hair removal. They were treated on the legs and axilla with a 755 or 1064 nm millisecond-domain laser equipped with either (i) cryogen spray (CSC); (ii) refrigerated air (RA); or (iii) contact cooling with sapphire (CC). Concentration of ultrafine nanoparticles <1 μm were measured just before and during LHR with the three respective cooling methods. For contact cooling (CC), counts remained at baseline levels, below 3,500 parts per cubic centimeter (ppc) for all treatments. In contrast, the CSC system produced large levels of plume, peaking at times to over 400,000 ppc. The CA cooled system produced intermediate levels of plume, about 35,000 ppc (or about 10× baseline). Cold Sapphire Skin cooling with gel suppresses plume during laser hair removal, potentially eliminating the need for smoke evacuators, custom ventilation systems, and respirators during LHR. Lasers Surg. Med. 50:280-283, 2018. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Mixed electrochemical–ferroelectric states in nanoscale ferroelectrics

DOE PAGES

Yang, Sang Mo; Morozovska, Anna N.; Kumar, Rajeev; ...

2017-05-01

Ferroelectricity on the nanoscale has been the subject of much fascination in condensed-matter physics for over half a century. In recent years, multiple reports claiming ferroelectricity in ultrathin ferroelectric films based on the formation of remnant polarization states, local electromechanical hysteresis loops, and pressure-induced switching were made. But, similar phenomena were reported for traditionally non-ferroelectric materials, creating a significant level of uncertainty in the field. We show that in nanoscale systems the ferroelectric state is fundamentally inseparable from the electrochemical state of the surface, leading to the emergence of a mixed electrochemical–ferroelectric state. We explore the nature, thermodynamics, and thicknessmore » evolution of such states, and demonstrate the experimental pathway to establish its presence. Our analysis reconciles multiple prior studies, provides guidelines for studies of ferroelectric materials on the nanoscale, and establishes the design paradigm for new generations of ferroelectric-based devices.« less

Understanding Cooperative Chirality at the Nanoscale

NASA Astrophysics Data System (ADS)

Yu, Shangjie; Wang, Pengpeng; Govorov, Alexander; Ouyang, Min

Controlling chirality of organic and inorganic structures plays a key role in many physical, chemical and biochemical processes, and may offer new opportunity to create technology applications based on chiroptical effect. In this talk, we will present a theoretical model and simulation to demonstrate how to engineer nanoscale chirality in inorganic nanostructures via synergistic control of electromagnetic response of both lattice and geometry, leading to rich tunability of chirality at the nanoscale. Our model has also been applied to understand recent materials advancement of related control with excellent agreement, and can elucidate physical origins of circular dichroism features in the experiment.

Alignment-enhancing feed-through conductors for stackable silicon-on-sapphire wafers

NASA Technical Reports Server (NTRS)

Anthony, Thomas R. (Inventor)

1983-01-01

Alignment-enhancing electrically conductive feed-through paths are provided for the high-speed low-loss transfer of electrical signals between integrated circuits of a plurality of silicon-on-sapphire bodies arrayed in a stack. The alignment-enhancing feed-throughs are made by a process involving the drilling of holes through the body, double-sided sputtering, electroplating, and the filling of the holes with solder by capillary action. The alignment-enhancing feed-throughs are activated by forming a stack of wafers and remelting the solder whereupon the wafers, and the feed-through paths, are pulled into alignment by surface tension forces.

Hidden instabilities in the Ti:sapphire Kerr lens mode-locked laser.

PubMed

Kovalsky, M G; Hnilo, A A; González Inchauspe, C M

1999-11-15

It is experimentally shown that pulse-to-pulse instabilities in the output of Kerr lens mode-locked Ti:sapphire lasers are usual and that they can affect some of the pulse variables (e.g., the spot size) and not others (e.g., pulse duration and energy). These instabilities are not detectable in the averaged signals (such as the autocorrelation of the pulse) that are customarily used for controlling the laser. But, if they are present but are disregarded, these instabilities have undesirable consequences in almost any application. A simple way to detect and eliminate the instabilities is described.

Quantifying Heterogeneities in Soil Cover and Weathering in the Bitterroot and Sapphire Mountains, Montana: Implications for Glacial Legacies and their Morphologic Control on Soil Formation

NASA Astrophysics Data System (ADS)

Benjaram, S. S.; Dixon, J. L.

2017-12-01

To what extent is chemical weathering governed by a landscape's topography? Quantifying chemical weathering in both steep rocky landscapes and soil-mantled landscapes requires describing heterogeneity in soil and rock cover at local and landscape scales. Two neighboring mountain ranges in the northern Rockies of western Montana, USA, provide an ideal natural laboratory in which to investigate the relationship between soil chemical weathering, persistence of soil cover, and topography. We focus our work in the previously glaciated Bitterroot Mountains, which consist of steep, rock-dominated hillslopes, and the neighboring unglaciated Sapphire Mountains, which display convex, soil-mantled hillslopes. Soil thickness measurements, soil and rock geochemistry, and digital terrain analysis reveal that soils in the rock-dominated Bitterroot Mountains are only slightly less weathered than those in the Sapphire Mountains. However, these differences are magnified when adjusted for rock fragments at a local scale and bedrock cover at a landscape scale, using our newly developed metric, the rock-adjusted chemical depletion fraction (RACDF) and rock-adjusted mass transfer coefficient (RA τ). The Bitterroots overall are 30% less weathered than the Sapphires despite higher mean annual precipitation in the former, with an average rock-adjusted CDF of 0.38 in the postglacial Bitterroots catchment and 0.61 in the nonglacial Sapphire catchment, suggesting that 38% of rock mass is lost in the conversion to soil in the Bitterroots, whereas 61% of rock mass is lost in the nonglaciated Sapphires. Because the previously glaciated Bitterroots are less weathered despite being wetter, we conclude that the glacial history of this landscape exerts more influence on soil chemical weathering than does modern climate. However, while previous studies have correlated weathering intensity with topographic parameters such as slope gradient, we find little topographic indication of specific controls

Democratization of Nanoscale Imaging and Sensing Tools Using Photonics

PubMed Central

2015-01-01

Providing means for researchers and citizen scientists in the developing world to perform advanced measurements with nanoscale precision can help to accelerate the rate of discovery and invention as well as improve higher education and the training of the next generation of scientists and engineers worldwide. Here, we review some of the recent progress toward making optical nanoscale measurement tools more cost-effective, field-portable, and accessible to a significantly larger group of researchers and educators. We divide our review into two main sections: label-based nanoscale imaging and sensing tools, which primarily involve fluorescent approaches, and label-free nanoscale measurement tools, which include light scattering sensors, interferometric methods, photonic crystal sensors, and plasmonic sensors. For each of these areas, we have primarily focused on approaches that have either demonstrated operation outside of a traditional laboratory setting, including for example integration with mobile phones, or exhibited the potential for such operation in the near future. PMID:26068279

Democratization of Nanoscale Imaging and Sensing Tools Using Photonics.

PubMed

McLeod, Euan; Wei, Qingshan; Ozcan, Aydogan

2015-07-07

Providing means for researchers and citizen scientists in the developing world to perform advanced measurements with nanoscale precision can help to accelerate the rate of discovery and invention as well as improve higher education and the training of the next generation of scientists and engineers worldwide. Here, we review some of the recent progress toward making optical nanoscale measurement tools more cost-effective, field-portable, and accessible to a significantly larger group of researchers and educators. We divide our review into two main sections: label-based nanoscale imaging and sensing tools, which primarily involve fluorescent approaches, and label-free nanoscale measurement tools, which include light scattering sensors, interferometric methods, photonic crystal sensors, and plasmonic sensors. For each of these areas, we have primarily focused on approaches that have either demonstrated operation outside of a traditional laboratory setting, including for example integration with mobile phones, or exhibited the potential for such operation in the near future.

Controlling electrostatic charging of nanocrystalline diamond at nanoscale.

PubMed

Verveniotis, Elisseos; Kromka, Alexander; Rezek, Bohuslav

2013-06-11

Constant electrical current in the range of -1 to -200 pA is applied by an atomic force microscope (AFM) in contact mode regime to induce and study local electrostatic charging of oxygen-terminated nanocrystalline diamond (NCD) thin films. The NCD films are deposited on silicon in 70 nm thickness and with 60% relative sp(2) phase content. Charging current is monitored by conductive AFM. Electric potential contrast induced by the current is evaluated by Kelvin force microscopy (KFM). KFM shows well-defined, homogeneous, and reproducible microscopic patterns that are not influenced by inherent tip-surface junction fluctuations during the charging process. The charged patterns are persistent for at least 72 h due to charge trapping inside the NCD film. The current-induced charging also clearly reveals field-induced detrapping at current amplitudes >-50 pA and tip instability at >-150 pA, both of which limit the achievable potential contrast. In addition, we show that the field also determines the range of electronic states that can trap the charge. We present a model and discuss implications for control of the nanoscale charging process.

Facile Fabrication of Binary Nanoscale Interface for No-Loss Microdroplet Transportation.

PubMed

Liang, Weitao; Zhu, Liqun; Li, Weiping; Xu, Chang; Liu, Huicong

2016-06-07

Binary nanoscale interfacial materials are fundamental issues in many applications for smart surfaces. A binary nanoscale interface with binary surface morphology and binary wetting behaviors has been prepared by a facile wet-chemical method. The prepared surface presents superhydrophobicity and high adhesion with the droplet at the same time. The composition, surface morphology, and wetting behaviors of the prepared surface have been systematic studied. The special wetting behaviors can be contributed to the binary nanoscale effect. The stability of the prepared surface was also investigated. As a primary application, a facile device based on the prepared binary nanoscale interface with superhydrophobicity and high adhesion was constructed for microdroplet transportation.

A microwave exciter for Cs frequency standards based on a sapphire-loaded cavity oscillator.

PubMed

Koga, Y; McNeilage, C; Searls, J H; Ohshima, S

2001-01-01

A low noise and highly stable microwave exciter system has been built for Cs atomic frequency standards using a tunable sapphire-loaded cavity oscillator (SLCO), which works at room temperature. This paper discusses the successful implementation of a control system for locking the SLCO to a long-term reference signal and reports an upper limit of the achieved frequency tracking error 6 x 10(-15) at tau = 1 s.

Localized conductive patterning via focused electron beam reduction of graphene oxide

NASA Astrophysics Data System (ADS)

Kim, Songkil; Kulkarni, Dhaval D.; Henry, Mathias; Zackowski, Paul; Jang, Seung Soon; Tsukruk, Vladimir V.; Fedorov, Andrei G.

2015-03-01

We report on a method for "direct-write" conductive patterning via reduction of graphene oxide (GO) sheets using focused electron beam induced deposition (FEBID) of carbon. FEBID treatment of the intrinsically dielectric graphene oxide between two metal terminals opens up the conduction channel, thus enabling a unique capability for nanoscale conductive domain patterning in GO. An increase in FEBID electron dose results in a significant increase of the domain electrical conductivity with improving linearity of drain-source current vs. voltage dependence, indicative of a change of graphene oxide electronic properties from insulating to semiconducting. Density functional theory calculations suggest a possible mechanism underlying this experimentally observed phenomenon, as localized reduction of graphene oxide layers via interactions with highly reactive intermediates of electron-beam-assisted dissociation of surface-adsorbed hydrocarbon molecules. These findings establish an unusual route for using FEBID as nanoscale lithography and patterning technique for engineering carbon-based nanomaterials and devices with locally tailored electronic properties.

Nanoscale silicon substrate patterns from self-assembly of cylinder forming poly(styrene)-block-poly(dimethylsiloxane) block copolymer on silane functionalized surfaces.

PubMed

Borah, Dipu; Cummins, Cian; Rasappa, Sozaraj; Watson, Scott M D; Pike, Andrew R; Horrocks, Benjamin R; Fulton, David A; Houlton, Andrew; Liontos, George; Ntetsikas, Konstantinos; Avgeropoulos, Apostolos; Morris, Michael A

2017-01-27

Poly(styrene)-block-poly(dimethylsiloxane) (PS-b-PDMS) is an excellent block copolymer (BCP) system for self-assembly and inorganic template fabrication because of its high Flory-Huggins parameter (χ ∼ 0.26) at room temperature in comparison to other BCPs, and high selective etch contrast between PS and PDMS block for nanopatterning. In this work, self-assembly in PS-b-PDMS BCP is achieved by combining hydroxyl-terminated poly(dimethylsiloxane) (PDMS-OH) brush surfaces with solvent vapor annealing. As an alternative to standard brush chemistry, we report a simple method based on the use of surfaces functionalized with silane-based self-assembled monolayers (SAMs). A solution-based approach to SAM formation was adopted in this investigation. The influence of the SAM-modified surfaces upon BCP films was compared with polymer brush-based surfaces. The cylinder forming PS-b-PDMS BCP and PDMS-OH polymer brush were synthesized by sequential living anionic polymerization. It was observed that silane SAMs provided the appropriate surface chemistry which, when combined with solvent annealing, led to microphase segregation in the BCP. It was also demonstrated that orientation of the PDMS cylinders may be controlled by judicious choice of the appropriate silane. The PDMS patterns were successfully used as an on-chip etch mask to transfer the BCP pattern to underlying silicon substrate with sub-25 nm silicon nanoscale features. This alternative SAM/BCP approach to nanopattern formation shows promising results, pertinent in the field of nanotechnology, and with much potential for application, such as in the fabrication of nanoimprint lithography stamps, nanofluidic devices or in narrow and multilevel interconnected lines.

Nanoscale silicon substrate patterns from self-assembly of cylinder forming poly(styrene)-block-poly(dimethylsiloxane) block copolymer on silane functionalized surfaces

NASA Astrophysics Data System (ADS)

Borah, Dipu; Cummins, Cian; Rasappa, Sozaraj; Watson, Scott M. D.; Pike, Andrew R.; Horrocks, Benjamin R.; Fulton, David A.; Houlton, Andrew; Liontos, George; Ntetsikas, Konstantinos; Avgeropoulos, Apostolos; Morris, Michael A.

2017-01-01

Poly(styrene)-block-poly(dimethylsiloxane) (PS-b-PDMS) is an excellent block copolymer (BCP) system for self-assembly and inorganic template fabrication because of its high Flory-Huggins parameter (χ ˜ 0.26) at room temperature in comparison to other BCPs, and high selective etch contrast between PS and PDMS block for nanopatterning. In this work, self-assembly in PS-b-PDMS BCP is achieved by combining hydroxyl-terminated poly(dimethylsiloxane) (PDMS-OH) brush surfaces with solvent vapor annealing. As an alternative to standard brush chemistry, we report a simple method based on the use of surfaces functionalized with silane-based self-assembled monolayers (SAMs). A solution-based approach to SAM formation was adopted in this investigation. The influence of the SAM-modified surfaces upon BCP films was compared with polymer brush-based surfaces. The cylinder forming PS-b-PDMS BCP and PDMS-OH polymer brush were synthesized by sequential living anionic polymerization. It was observed that silane SAMs provided the appropriate surface chemistry which, when combined with solvent annealing, led to microphase segregation in the BCP. It was also demonstrated that orientation of the PDMS cylinders may be controlled by judicious choice of the appropriate silane. The PDMS patterns were successfully used as an on-chip etch mask to transfer the BCP pattern to underlying silicon substrate with sub-25 nm silicon nanoscale features. This alternative SAM/BCP approach to nanopattern formation shows promising results, pertinent in the field of nanotechnology, and with much potential for application, such as in the fabrication of nanoimprint lithography stamps, nanofluidic devices or in narrow and multilevel interconnected lines.

SU-G-TeP3-13: The Role of Nanoscale Energy Deposition in the Development of Gold Nanoparticle-Enhanced Radiotherapy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kirkby, C; The University of Calgary, Calgary, AB; Koger, B

2016-06-15

Purpose: Gold nanoparticles (GNPs) can enhance radiotherapy effects. The high photoelectric cross section of gold relative to tissue, particularly at lower energies, leads to localized dose enhancement. However in a clinical context, photon energies must also be sufficient to reach a target volume at a given depth. These properties must be balanced to optimize such a therapy. Given that nanoscale energy deposition patterns around GNPs play a role in determining biological outcomes, in this work we seek to establish their role in this optimization process. Methods: The PENELOPE Monte Carlo code was used to generate spherical dose deposition kernels inmore » 1000 nm diameter spheres around 50 nm diameter GNPs in response to monoenergetic photons incident on the GNP. Induced “lesions” were estimated by either a local effect model (LEM) or a mean dose model (MDM). The ratio of these estimates was examined for a range of photon energies (10 keV to 2 MeV), for three sets of linear-quadratic parameters. Results: The models produce distinct differences in expected lesion values, the lower the alpha-beta ratio, the greater the difference. The ratio of expected lesion values remained constant within 5% for energies of 40 keV and above across all parameter sets and rose to a difference of 35% for lower energies only for the lowest alpha-beta ratio. Conclusion: Consistent with other work, these calculations suggest nanoscale energy deposition patterns matter in predicting biological response to GNP-enhanced radiotherapy. However the ratio of expected lesions between the different models is largely independent of energy, indicating that GNP-enhanced radiotherapy scenarios can be optimized in photon energy without consideration of the nanoscale patterns. Special attention may be warranted for energies of 20 keV or below and low alpha-beta ratios.« less

A Nanoscale Interface Promoting Molecular and Functional Differentiation of Neural Cells

NASA Astrophysics Data System (ADS)

Posati, Tamara; Pistone, Assunta; Saracino, Emanuela; Formaggio, Francesco; Mola, Maria Grazia; Troni, Elisabetta; Sagnella, Anna; Nocchetti, Morena; Barbalinardo, Marianna; Valle, Francesco; Bonetti, Simone; Caprini, Marco; Nicchia, Grazia Paola; Zamboni, Roberto; Muccini, Michele; Benfenati, Valentina

2016-08-01

Potassium channels and aquaporins expressed by astrocytes are key players in the maintenance of cerebral homeostasis and in brain pathophysiologies. One major challenge in the study of astrocyte membrane channels in vitro, is that their expression pattern does not resemble the one observed in vivo. Nanostructured interfaces represent a significant resource to control the cellular behaviour and functionalities at micro and nanoscale as well as to generate novel and more reliable models to study astrocytes in vitro. However, the potential of nanotechnologies in the manipulation of astrocytes ion channels and aquaporins has never been previously reported. Hydrotalcite-like compounds (HTlc) are layered materials with increasing potential as biocompatible nanoscale interface. Here, we evaluate the effect of the interaction of HTlc nanoparticles films with primary rat neocortical astrocytes. We show that HTlc films are biocompatible and do not promote gliotic reaction, while favouring astrocytes differentiation by induction of F-actin fibre alignment and vinculin polarization. Western Blot, Immunofluorescence and patch-clamp revealed that differentiation was accompanied by molecular and functional up-regulation of both inward rectifying potassium channel Kir 4.1 and aquaporin 4, AQP4. The reported results pave the way to engineering novel in vitro models to study astrocytes in a in vivo like condition.

Control of Nanoscale Materials under the Toxic Substances Control Act

EPA Pesticide Factsheets

Many nanoscale materials are regarded as chemical substances, but they may have different properties than their larger counterparts. EPA is working to ensure that nanoscale materials are manufactured and used in ways that prevent risk to health.

Nanoscale welding of multi-walled carbon nanotubes by 1064 nm fiber laser

NASA Astrophysics Data System (ADS)

Yuan, Yanping; Liu, Zhi; Zhang, Kaihu; Han, Weina; Chen, Jimin

2018-07-01

This study proposes an efficient approach which uses 1064 nm continuous fiber laser to achieve nanoscale welding of crossed multi-walled carbon nanotubes (MWCNTs). By changing the irradiation time, different quality of nanoscale welding is obtained. The morphology changes are investigated by scanning electron microscope (SEM) and transmission electron microscope (TEM). The experiments demonstrate that better quality of MWCNTs nanoscale welding after 3 s irradiation can be obtained. It is found that new graphene layers between crossed nanotubes induced by laser make the nanoscale welding achieved due to the absorption of laser energy.

Modeling Self-Heating Effects in Nanoscale Devices

NASA Astrophysics Data System (ADS)

Raleva, K.; Shaik, A. R.; Vasileska, D.; Goodnick, S. M.

2017-08-01

Accurate thermal modeling and the design of microelectronic devices and thin film structures at the micro- and nanoscales poses a challenge to electrical engineers who are less familiar with the basic concepts and ideas in sub-continuum heat transport. This book aims to bridge that gap. Efficient heat removal methods are necessary to increase device performance and device reliability. The authors provide readers with a combination of nanoscale experimental techniques and accurate modeling methods that must be employed in order to determine a device's temperature profile.

Atomic fountain clock with very high frequency stability employing a pulse-tube-cryocooled sapphire oscillator.

PubMed

Takamizawa, Akifumi; Yanagimachi, Shinya; Tanabe, Takehiko; Hagimoto, Ken; Hirano, Iku; Watabe, Ken-ichi; Ikegami, Takeshi; Hartnett, John G

2014-09-01

The frequency stability of an atomic fountain clock was significantly improved by employing an ultra-stable local oscillator and increasing the number of atoms detected after the Ramsey interrogation, resulting in a measured Allan deviation of 8.3 × 10(-14)τ(-1/2)). A cryogenic sapphire oscillator using an ultra-low-vibration pulse-tube cryocooler and cryostat, without the need for refilling with liquid helium, was applied as a local oscillator and a frequency reference. High atom number was achieved by the high power of the cooling laser beams and optical pumping to the Zeeman sublevel m(F) = 0 employed for a frequency measurement, although vapor-loaded optical molasses with the simple (001) configuration was used for the atomic fountain clock. The resulting stability is not limited by the Dick effect as it is when a BVA quartz oscillator is used as the local oscillator. The stability reached the quantum projection noise limit to within 11%. Using a combination of a cryocooled sapphire oscillator and techniques to enhance the atom number, the frequency stability of any atomic fountain clock, already established as primary frequency standard, may be improved without opening its vacuum chamber.

Measurement of immature platelets with Abbott CD-Sapphire and Sysmex XE-5000 in haematology and oncology patients.

PubMed

Meintker, Lisa; Haimerl, Maria; Ringwald, Jürgen; Krause, Stefan W

2013-11-01

Measurement of immature platelets was introduced into routine diagnostics by Sysmex as immature platelet fraction (IPF) some years ago and recently by Abbott as reticulated platelet fraction (rPT). Here, we compare both methods. We evaluated the precision and agreement of these parameters between Sysmex XE-5000 and Abbott CD-Sapphire in three distinct thrombocytopaenic cohorts: 30 patients with beginning thrombocytopaenia and 64 patients with recovering platelets (PLT) after chemotherapy, 16 patients with immune thrombocytopaenia (ITP) or heparin-induced thrombocytopaenia type 2 (HIT) and 110 additional normal controls. Furthermore, we analysed, how IPF/rPT differed between these thrombocytopaenic cohorts and controls. Both analysers demonstrated acceptable overall precision (repeatability) of IPF/rPT with lower precision at low PLT counts. IPF/rPT artificially increased during storage of blood samples overnight. Inter-instrument comparison showed a moderate correlation (Pearson r²=0.38) and a systematic bias of 1.04 towards higher IPF-values with the XE-5000. IPF/rPT was highest in recovering thrombopoesis after chemotherapy and moderately increased in ITP/HIT. The normal range deduced from control samples was much narrower with CD-Sapphire (1.0%-3.8%, established here for the first time) in comparison to XE-5000 (0.8%-7.9%) leading to a smaller overlap of samples with increased PLT turnover and normal controls. IPF and rPT both give useful information on PLT turnover, although the two analysers only show a moderate inter-instrument correlation and have different reference ranges. A better separation of patient groups with high PLT turnover like ITP/HIT from normal controls is obtained by CD-Sapphire.

Intracavity frequency doubling of a continuous wave Ti:sapphire ring laser and application in resonance Raman spectroscopy of heme protein dynamics

NASA Astrophysics Data System (ADS)

Buchter, Scott C.; Williams, Curtis; Schulte, Alfons; Alekel, Theodore, III; Mizell, Gregory J.; Fay, William R.

1995-04-01

Noncritical temperature-tuned phase-matching and large nonlinear coefficients make potassium niobate an attractive material for frequency doubling tuneable near-infrared radiation. We have mounted a KNbO3 crystal intracavity in an argon ion pumped, continuous wave Ti:Sapphire ring laser to increase the power level of the second harmonic. Wavelength selection at the fundamental frequency is accomplished with a birefringent filter. By using the crystal orientation that defines the d32 coefficient of KNbO3 we have obtained a blue second harmonic output tuneable from 425-445 nm. The laser is also characterized by the narrow linewidth of the Ti:Sapphire ring oscillator and good temporal stability. A continuous wave, frequency doubled Ti:sapphire laser is well suited to excite the resonance Raman spectrum in heme proteins with strong absorption bands in the range of 400 to 450 nm. We demonstrate the feasibility of such a setup for Raman studies of ligand binding to myoglobin. The Raman bands yield information on the reaction dynamics and on conformational changes near the linkage between the heme and the protein. In particular, a shift of the stretch frequency of the iron- histidine bond with high pressure may be attributed to a protein conformational change.

Nanoscale array structures suitable for surface enhanced raman scattering and methods related thereto

DOEpatents

Bond, Tiziana C.; Miles, Robin; Davidson, James C.; Liu, Gang Logan

2014-07-22

Methods for fabricating nanoscale array structures suitable for surface enhanced Raman scattering, structures thus obtained, and methods to characterize the nanoscale array structures suitable for surface enhanced Raman scattering. Nanoscale array structures may comprise nanotrees, nanorecesses and tapered nanopillars.

Nanoscale array structures suitable for surface enhanced raman scattering and methods related thereto

DOEpatents

Bond, Tiziana C.; Miles, Robin; Davidson, James C.; Liu, Gang Logan

2015-07-14

Methods for fabricating nanoscale array structures suitable for surface enhanced Raman scattering, structures thus obtained, and methods to characterize the nanoscale array structures suitable for surface enhanced Raman scattering. Nanoscale array structures may comprise nanotrees, nanorecesses and tapered nanopillars.

Nanoscale array structures suitable for surface enhanced raman scattering and methods related thereto

DOEpatents

Bond, Tiziana C; Miles, Robin; Davidson, James; Liu, Gang Logan

2015-11-03

Methods for fabricating nanoscale array structures suitable for surface enhanced Raman scattering, structures thus obtained, and methods to characterize the nanoscale array structures suitable for surface enhanced Raman scattering. Nanoscale array structures may comprise nanotrees, nanorecesses and tapered nanopillars.

Nanoscale patterning of colloidal quantum dots on transparent and metallic planar surfaces.

PubMed

Park, Yeonsang; Roh, Young-Geun; Kim, Un Jeong; Chung, Dae-Young; Suh, Hwansoo; Kim, Jineun; Cheon, Sangmo; Lee, Jaesoong; Kim, Tae-Ho; Cho, Kyung-Sang; Lee, Chang-Won

2012-09-07

The patterning of colloidal quantum dots with nanometer resolution is essential for their application in photonics and plasmonics. Several patterning approaches, such as the use of polymer composites, molecular lock-and-key methods, inkjet printing and microcontact printing of quantum dots have been recently developed. Herein, we present a simple method of patterning colloidal quantum dots for photonic nanostructures such as straight lines, rings and dot patterns either on transparent or metallic substrates. Sub-10 nm width of the patterned line could be achieved with a well-defined sidewall profile. Using this method, we demonstrate a surface plasmon launcher from a quantum dot cluster in the visible spectrum.

75 FR 49487 - Nanomaterial Case Study: Nanoscale Silver in Disinfectant Spray

Federal Register 2010, 2011, 2012, 2013, 2014

2010-08-13

... Study: Nanoscale Silver in Disinfectant Spray AGENCY: Environmental Protection Agency (EPA). ACTION... document ``Nanomaterial Case Study: Nanoscale Silver in Disinfectant Spray'' (EPA/600/R-10/081). The... 49488

The active control devices of the size of products based on sapphire measuring tips with three degrees of freedom

NASA Astrophysics Data System (ADS)

Leun, E. V.; Leun, V. I.; Sysoev, V. K.; Zanin, K. A.; Shulepov, A. V.; Vyatlev, P. A.

2018-01-01

The article presents the results of the calculation of the load capacity of the active control devices (ACD) sapphire tip, which showed nearly 30-fold margin of safety to shock loads and experimental researches in mechanical contact with 5 cogs cutter 15 mm in diameter rotating with a frequency of 1000 rpm, which confirmed the calculations, determined the surface roughness Rz of the contact area of no more than 0.15 μm. Conditions have been created for recording without distortion of the image through a sapphire tip in contact with the processed article. A ACD design with new functionality is proposed: with one, two and three degrees of freedom of the sapphire tip and allows measuring the taper of the article and measurements on the chord. It is shown that with the implementation of their fixed head like the frame of the gyroscope with the rotations around the axes OY and OZ. It is shown that the rotation of the tip around the axis OX can be replaced more convenient for the implementation of the angular offset of the transferred image due to rotation of the output end of the flexible optical waveguide relative to the input. This makes it possible to reduce the "blurring of the image" during registration of the fast moving product profile when the slope of the recorder lines coincides with the slope of the edges of the image elements of the selected moving elements of the article.

Method and system for nanoscale plasma processing of objects

DOEpatents

Oehrlein, Gottlieb S [Clarksville, MD; Hua, Xuefeng [Hyattsville, MD; Stolz, Christian [Baden-Wuerttemberg, DE

2008-12-30

A plasma processing system includes a source of plasma, a substrate and a shutter positioned in close proximity to the substrate. The substrate/shutter relative disposition is changed for precise control of substrate/plasma interaction. This way, the substrate interacts only with a fully established, stable plasma for short times required for nanoscale processing of materials. The shutter includes an opening of a predetermined width, and preferably is patterned to form an array of slits with dimensions that are smaller than the Debye screening length. This enables control of the substrate/plasma interaction time while avoiding the ion bombardment of the substrate in an undesirable fashion. The relative disposition between the shutter and the substrate can be made either by moving the shutter or by moving the substrate.

Subwavelength engineered fiber-to-chip silicon-on-sapphire interconnects for mid-infrared applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Alonso-Ramos, Carlos; Han, Zhaohong; Le Roux, Xavier; Lin, Hongtao; Singh, Vivek; Lin, Pao Tai; Tan, Dawn; Cassan, Eric; Marris-Morini, Delphine; Vivien, Laurent; Wada, Kazumi; Hu, Juejun; Agarwal, Anuradha; Kimerling, Lionel C.

2016-05-01

The mid-Infrared wavelength range (2-20 µm), so-called fingerprint region, contains the very sharp vibrational and rotational resonances of many chemical and biological substances. Thereby, on-chip absorption-spectrometry-based sensors operating in the mid-Infrared (mid-IR) have the potential to perform high-precision, label-free, real-time detection of multiple target molecules within a single sensor, which makes them an ideal technology for the implementation of lab-on-a-chip devices. Benefiting from the great development realized in the telecom field, silicon photonics is poised to deliver ultra-compact efficient and cost-effective devices fabricated at mass scale. In addition, Si is transparent up to 8 µm wavelength, making it an ideal material for the implementation of high-performance mid-IR photonic circuits. The silicon-on-insulator (SOI) technology, typically used in telecom applications, relies on silicon dioxide as bottom insulator. Unfortunately, silicon dioxide absorbs light beyond 3.6 µm, limiting the usability range of the SOI platform for the mid-IR. Silicon-on-sapphire (SOS) has been proposed as an alternative solution that extends the operability region up to 6 µm (sapphire absorption), while providing a high-index contrast. In this context, surface grating couplers have been proved as an efficient means of injecting and extracting light from mid-IR SOS circuits that obviate the need of cleaving sapphire. However, grating couplers typically have a reduced bandwidth, compared with facet coupling solutions such as inverse or sub-wavelength tapers. This feature limits their feasibility for absorption spectroscopy applications that may require monitoring wide wavelength ranges. Interestingly, sub-wavelength engineering can be used to substantially improve grating coupler bandwidth, as demonstrated in devices operating at telecom wavelengths. Here, we report on the development of fiber-to-chip interconnects to ZrF4 optical fibers and integrated SOS

Abbreviated epitaxial growth mode (AGM) method for reducing cost and improving quality of LEDs and lasers

DOEpatents

Tansu, Nelson; Chan, Helen M; Vinci, Richard P; Ee, Yik-Khoon; Biser, Jeffrey

2013-09-24

The use of an abbreviated GaN growth mode on nano-patterned AGOG sapphire substrates, which utilizes a process of using 15 nm low temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated at least a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.

Charge transport in nanoscale junctions.

PubMed

Albrecht, Tim; Kornyshev, Alexei; Bjørnholm, Thomas

2008-09-03

the molecular level. Nanoscale charge transport experiments in ionic liquids extend the field to high temperatures and to systems with intriguing interfacial potential distributions. Other directions may include dye-sensitized solar cells, new sensor applications and diagnostic tools for the study of surface-bound single molecules. Another motivation for this special issue is thus to highlight activities across different research communities with nanoscale charge transport as a common denominator. This special issue gathers 27 articles by scientists from the United States, Germany, the UK, Denmark, Russia, France, Israel, Canada, Australia, Sweden, Switzerland, the Netherlands, Belgium and Singapore; it gives us a flavour of the current state-of-the-art of this diverse research area. While based on contributions from many renowned groups and institutions, it obviously cannot claim to represent all groups active in this very broad area. Moreover, a number of world-leading groups were unable to take part in this project within the allocated time limit. Nevertheless, we regard the current selection of papers to be representative enough for the reader to draw their own conclusions about the current status of the field. Each paper is original and has its own merit, as all papers in Journal of Physics: Condensed Matter special issues are subjected to the same scrutiny as regular contributions. The Guest Editors have deliberately not defined the specific subjects covered in this issue. These came out logically from the development of this area, for example: 'Traditional' solid state nanojunctions based on adsorbed layers, oxide films or nanowires sandwiched between two electrodes: effects of molecular structure (aromaticity, anchoring groups), symmetry, orientation, dynamics (noise patterns) and current-induced heating. Various 'physical effects': inelastic tunnelling and Coulomb blockade, polaron effects, switching modes, and negative differential resistance; the role of

Nanoscale hotspots due to nonequilibrium thermal transport.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sinha, Sanjiv; Goodson, Kenneth E.

2004-01-01

Recent experimental and modeling efforts have been directed towards the issue of temperature localization and hotspot formation in the vicinity of nanoscale heat generating devices. The nonequilibrium transport conditions which develop around these nanoscale devices results in elevated temperatures near the heat source which can not be predicted by continuum diffusion theory. Efforts to determine the severity of this temperature localization phenomena in silicon devices near and above room temperature are of technological importance to the development of microelectronics and other nanotechnologies. In this work, we have developed a new modeling tool in order to explore the magnitude of themore » additional thermal resistance which forms around nanoscale hotspots from temperatures of 100-1000K. The models are based on a two fluid approximation in which thermal energy is transferred between ''stationary'' optical phonons and fast propagating acoustic phonon modes. The results of the model have shown excellent agreement with experimental results of localized hotspots in silicon at lower temperatures. The model predicts that the effect of added thermal resistance due to the nonequilibrium phonon distribution is greatest at lower temperatures, but is maintained out to temperatures of 1000K. The resistance predicted by the numerical code can be easily integrated with continuum models in order to predict the temperature distribution around nanoscale heat sources with improved accuracy. Additional research efforts also focused on the measurements of the thermal resistance of silicon thin films at higher temperatures, with a focus on polycrystalline silicon. This work was intended to provide much needed experimental data on the thermal transport properties for micro and nanoscale devices built with this material. Initial experiments have shown that the exposure of polycrystalline silicon to high temperatures may induce recrystallization and radically increase the thermal

WDM Nanoscale Laser Diodes for Si Photonic Interconnects

DTIC Science & Technology

2016-07-25

mounting on silicon. The nanoscale VCSELs can achieve small optical modes and present a compact laser diode that is also robust. In this work we have used...Distribution Unlimited UU UU UU UU 25-07-2016 1-Feb-2012 31-Dec-2015 Final Report: WDM Nanoscale Laser Diodes for Si Photonic Interconnects The views...P.O. Box 12211 Research Triangle Park, NC 27709-2211 VCSEL, optical interconnect, laser diode , semiconductor laser, microcavity REPORT DOCUMENTATION

Efficiency improvement of InGaN light emitting diodes with embedded self-assembled SiO2 nanosphere arrays

NASA Astrophysics Data System (ADS)

Zhang, Yonghui; Wei, Tongbo; Wang, Junxi; Fan, Chao; Chen, Yu; Hu, Qiang; Li, Jinmin

2014-05-01

In this study, the periodic SiO2 nanosphere nanopatterned sapphire substrate (SiO2-NPSS) was made using self-assembled SiO2 nanosphere monolayer template and inductively coupled plasma (ICP) etching. And the self-assembled SiO2 nanosphere monolayer was directly embedded into the GaN/sapphire interface by nanoscale epitaxial lateral overgrowth (NELOG). For comparison, a common nanopatterned sapphire substrate (C-NPSS) was also made through dry etching with the SiO2 nanospheres used as the mask. Compared with LEDs grown on C-NPSS and flat sapphire substrate (FSS), the external quantum efficiency of LEDs with SiO2 nanopheres (SiO2-NPSS) was increased by 30.7% and 81.9% under a driving current 350 mA. The SiO2-NPSS not only improved the crystalline quality of GaN but also enhanced the light extraction efficiency (LEE) of LED. And the SiO2-NPSS LED also showed more light in vertical direction and more uniform light distribution. By finite-difference time-domain (FDTD) simulation, we confirmed that more light could be reflected from the GaN/SiO2 interface than the GaN/sapphire interface because the refractive index of SiO2 was lower than that of sapphire. Therefore, LED grown on the SiO2-NPSS showed superior light extraction efficiency compared to that on C-NPSS.

Biosafe Nanoscale Pharmaceutical Adjuvant Materials

PubMed Central

Jin, Shubin; Li, Shengliang; Wang, Chongxi; Liu, Juan; Yang, Xiaolong; Wang, Paul C.; Zhang, Xin; Liang, Xing-Jie

2014-01-01

Thanks to developments in the field of nanotechnology over the past decades, more and more biosafe nanoscale materials have become available for use as pharmaceutical adjuvants in medical research. Nanomaterials possess unique properties which could be employed to develop drug carriers with longer circulation time, higher loading capacity, better stability in physiological conditions, controlled drug release, and targeted drug delivery. In this review article, we will review recent progress in the application of representative organic, inorganic and hybrid biosafe nanoscale materials in pharmaceutical research, especially focusing on nanomaterial-based novel drug delivery systems. In addition, we briefly discuss the advantages and notable functions that make these nanomaterials suitable for the design of new medicines; the biosafety of each material discussed in this article is also highlighted to provide a comprehensive understanding of their adjuvant attributes. PMID:25429253

Nanomaterial Case Study: Nanoscale Silver in Disinfectant Spray (Final Report)

EPA Science Inventory

EPA announced the release of the final report, Nanomaterial Case Study: Nanoscale Silver in Disinfectant Spray. This report represents a case study of engineered nanoscale silver (nano-Ag), focusing on the specific example of nano-Ag as possibly used in disinfectant spr...

New X-Ray Technique to Characterize Nanoscale Precipitates in Aged Aluminum Alloys

NASA Astrophysics Data System (ADS)

Sitdikov, V. D.; Murashkin, M. Yu.; Valiev, R. Z.

2017-10-01

This paper puts forward a new technique for measurement of x-ray patterns, which enables to solve the problem of identification and determination of precipitates (nanoscale phases) in metallic alloys of the matrix type. The minimum detection limit of precipitates in the matrix of the base material provided by this technique constitutes as little as 1%. The identification of precipitates in x-ray patterns and their analysis are implemented through a transmission mode with a larger radiation area, longer holding time and higher diffractometer resolution as compared to the conventional reflection mode. The presented technique has been successfully employed to identify and quantitatively describe precipitates formed in the Al alloy of the Al-Mg-Si system as a result of artificial aging. For the first time, the x-ray phase analysis has been used to identify and measure precipitates formed during the alloy artificial aging.

Nanoscale relaxation oscillator

DOEpatents

Zettl, Alexander K.; Regan, Brian C.; Aloni, Shaul

2009-04-07

A nanoscale oscillation device is disclosed, wherein two nanoscale droplets are altered in size by mass transport, then contact each other and merge through surface tension. The device may also comprise a channel having an actuator responsive to mechanical oscillation caused by expansion and contraction of the droplets. It further has a structure for delivering atoms between droplets, wherein the droplets are nanoparticles. Provided are a first particle and a second particle on the channel member, both being made of a chargeable material, the second particle contacting the actuator portion; and electrodes connected to the channel member for delivering a potential gradient across the channel and traversing the first and second particles. The particles are spaced apart a specified distance so that atoms from one particle are delivered to the other particle by mass transport in response to the potential (e.g. voltage potential) and the first and second particles are liquid and touch at a predetermined point of growth, thereby causing merging of the second particle into the first particle by surface tension forces and reverse movement of the actuator. In a preferred embodiment, the channel comprises a carbon nanotube and the droplets comprise metal nanoparticles, e.g. indium, which is readily made liquid.

Investigating Nanoscale Electrochemistry with Surface- and Tip-Enhanced Raman Spectroscopy.

PubMed

Zaleski, Stephanie; Wilson, Andrew J; Mattei, Michael; Chen, Xu; Goubert, Guillaume; Cardinal, M Fernanda; Willets, Katherine A; Van Duyne, Richard P

2016-09-20

The chemical sensitivity of surface-enhanced Raman spectroscopy (SERS) methodologies allows for the investigation of heterogeneous chemical reactions with high sensitivity. Specifically, SERS methodologies are well-suited to study electron transfer (ET) reactions, which lie at the heart of numerous fundamental processes: electrocatalysis, solar energy conversion, energy storage in batteries, and biological events such as photosynthesis. Heterogeneous ET reactions are commonly monitored by electrochemical methods such as cyclic voltammetry, observing billions of electrochemical events per second. Since the first proof of detecting single molecules by redox cycling, there has been growing interest in examining electrochemistry at the nanoscale and single-molecule levels. Doing so unravels details that would otherwise be obscured by an ensemble experiment. The use of optical spectroscopies, such as SERS, to elucidate nanoscale electrochemical behavior is an attractive alternative to traditional approaches such as scanning electrochemical microscopy (SECM). While techniques such as single-molecule fluorescence or electrogenerated chemiluminescence have been used to optically monitor electrochemical events, SERS methodologies, in particular, have shown great promise for exploring electrochemistry at the nanoscale. SERS is ideally suited to study nanoscale electrochemistry because the Raman-enhancing metallic, nanoscale substrate duly serves as the working electrode material. Moreover, SERS has the ability to directly probe single molecules without redox cycling and can achieve nanoscale spatial resolution in combination with super-resolution or scanning probe microscopies. This Account summarizes the latest progress from the Van Duyne and Willets groups toward understanding nanoelectrochemistry using Raman spectroscopic methodologies. The first half of this Account highlights three techniques that have been recently used to probe few- or single-molecule electrochemical

Neuromorphic computing with nanoscale spintronic oscillators

PubMed Central

Torrejon, Jacob; Riou, Mathieu; Araujo, Flavio Abreu; Tsunegi, Sumito; Khalsa, Guru; Querlioz, Damien; Bortolotti, Paolo; Cros, Vincent; Fukushima, Akio; Kubota, Hitoshi; Yuasa, Shinji; Stiles, M. D.; Grollier, Julie

2017-01-01

Neurons in the brain behave as non-linear oscillators, which develop rhythmic activity and interact to process information1. Taking inspiration from this behavior to realize high density, low power neuromorphic computing will require huge numbers of nanoscale non-linear oscillators. Indeed, a simple estimation indicates that, in order to fit a hundred million oscillators organized in a two-dimensional array inside a chip the size of a thumb, their lateral dimensions must be smaller than one micrometer. However, despite multiple theoretical proposals2–5, and several candidates such as memristive6 or superconducting7 oscillators, there is no proof of concept today of neuromorphic computing with nano-oscillators. Indeed, nanoscale devices tend to be noisy and to lack the stability required to process data in a reliable way. Here, we show experimentally that a nanoscale spintronic oscillator8,9 can achieve spoken digit recognition with accuracies similar to state of the art neural networks. We pinpoint the regime of magnetization dynamics leading to highest performance. These results, combined with the exceptional ability of these spintronic oscillators to interact together, their long lifetime, and low energy consumption, open the path to fast, parallel, on-chip computation based on networks of oscillators. PMID:28748930

Write-Read 3D Patterning with a Dual-Channel Nanopipette.

PubMed

Momotenko, Dmitry; Page, Ashley; Adobes-Vidal, Maria; Unwin, Patrick R

2016-09-27

Nanopipettes are becoming extremely versatile and powerful tools in nanoscience for a wide variety of applications from imaging to nanoscale sensing. Herein, the capabilities of nanopipettes to build complex free-standing three-dimensional (3D) nanostructures are demonstrated using a simple double-barrel nanopipette device. Electrochemical control of ionic fluxes enables highly localized delivery of precursor species from one channel and simultaneous (dynamic and responsive) ion conductance probe-to-substrate distance feedback with the other for reliable high-quality patterning. Nanopipettes with 30-50 nm tip opening dimensions of each channel allowed confinement of ionic fluxes for the fabrication of high aspect ratio copper pillar, zigzag, and Γ-like structures, as well as permitted the subsequent topographical mapping of the patterned features with the same nanopipette probe as used for nanostructure engineering. This approach offers versatility and robustness for high-resolution 3D "printing" (writing) and read-out at the nanoscale.

Plasmon-mediated chemical surface functionalization at the nanoscale

NASA Astrophysics Data System (ADS)

Nguyen, Mai; Lamouri, Aazdine; Salameh, Chrystelle; Lévi, Georges; Grand, Johan; Boubekeur-Lecaque, Leïla; Mangeney, Claire; Félidj, Nordin

2016-04-01

Controlling the surface grafting of species at the nanoscale remains a major challenge, likely to generate many opportunities in materials science. In this work, we propose an original strategy for chemical surface functionalization at the nanoscale, taking advantage of localized surface plasmon (LSP) excitation. The surface functionalization is demonstrated through aryl film grafting (derived from a diazonium salt), covalently bonded at the surface of gold lithographic nanostripes. The aryl film is specifically grafted in areas of maximum near field enhancement, as confirmed by numerical calculation based on the discrete dipole approximation method. The energy of the incident light and the LSP wavelength are shown to be crucial parameters to monitor the aryl film thickness of up to ~30 nm. This robust and versatile strategy opens up exciting prospects for the nanoscale confinement of functional layers on surfaces, which should be particularly interesting for molecular sensing or nanooptics.Controlling the surface grafting of species at the nanoscale remains a major challenge, likely to generate many opportunities in materials science. In this work, we propose an original strategy for chemical surface functionalization at the nanoscale, taking advantage of localized surface plasmon (LSP) excitation. The surface functionalization is demonstrated through aryl film grafting (derived from a diazonium salt), covalently bonded at the surface of gold lithographic nanostripes. The aryl film is specifically grafted in areas of maximum near field enhancement, as confirmed by numerical calculation based on the discrete dipole approximation method. The energy of the incident light and the LSP wavelength are shown to be crucial parameters to monitor the aryl film thickness of up to ~30 nm. This robust and versatile strategy opens up exciting prospects for the nanoscale confinement of functional layers on surfaces, which should be particularly interesting for molecular sensing

A Theoretical Review on Interfacial Thermal Transport at the Nanoscale.

PubMed

Zhang, Ping; Yuan, Peng; Jiang, Xiong; Zhai, Siping; Zeng, Jianhua; Xian, Yaoqi; Qin, Hongbo; Yang, Daoguo

2018-01-01

With the development of energy science and electronic technology, interfacial thermal transport has become a key issue for nanoelectronics, nanocomposites, energy transmission, and conservation, etc. The application of thermal interfacial materials and other physical methods can reliably improve the contact between joined surfaces and enhance interfacial thermal transport at the macroscale. With the growing importance of thermal management in micro/nanoscale devices, controlling and tuning the interfacial thermal resistance (ITR) at the nanoscale is an urgent task. This Review examines nanoscale interfacial thermal transport mainly from a theoretical perspective. Traditional theoretical models, multiscale models, and atomistic methodologies for predicting ITR are introduced. Based on the analysis and summary of the factors that influence ITR, new methods to control and reduce ITR at the nanoscale are described in detail. Furthermore, the challenges facing interfacial thermal management and the further progress required in this field are discussed. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device.

PubMed

Park, Sangsu; Noh, Jinwoo; Choo, Myung-Lae; Sheri, Ahmad Muqeem; Chang, Man; Kim, Young-Bae; Kim, Chang Jung; Jeon, Moongu; Lee, Byung-Geun; Lee, Byoung Hun; Hwang, Hyunsang

2013-09-27

Efforts to develop scalable learning algorithms for implementation of networks of spiking neurons in silicon have been hindered by the considerable footprints of learning circuits, which grow as the number of synapses increases. Recent developments in nanotechnologies provide an extremely compact device with low-power consumption.In particular, nanoscale resistive switching devices (resistive random-access memory (RRAM)) are regarded as a promising solution for implementation of biological synapses due to their nanoscale dimensions, capacity to store multiple bits and the low energy required to operate distinct states. In this paper, we report the fabrication, modeling and implementation of nanoscale RRAM with multi-level storage capability for an electronic synapse device. In addition, we first experimentally demonstrate the learning capabilities and predictable performance by a neuromorphic circuit composed of a nanoscale 1 kbit RRAM cross-point array of synapses and complementary metal-oxide-semiconductor neuron circuits. These developments open up possibilities for the development of ubiquitous ultra-dense, ultra-low-power cognitive computers.

Femtosecond deep-infrared optical parametric oscillator pumped directly by a Ti:sapphire laser

NASA Astrophysics Data System (ADS)

O'Donnell, Callum; Chaitanya Kumar, S.; Zawilski, Kevin T.; Schunemann, Peter G.; Ebrahim-Zadeh, Majid

2018-02-01

We report a high-repetition-rate femtosecond optical parametric oscillator (OPO) for the deep-infrared (deep-IR) based on the nonlinear optical crystal, CdSiP2 (CSP), pumped directly by a Ti:sapphire laser, for the first time. By pumping CSP at <1 μm, we have achieved practical output powers at the longest wavelengths generated by any Ti:sapphire-pumped OPO. Using a combination of pump wavelength tuning, type-I critical phase-matching, and cavity delay tuning, we have generated continuously tunable radiation across 6654-8373 nm (1194-1503 cm-1) at 80.5 MHz repetition rate, providing up to 20 mW of average power at 7314 nm and <7 mW beyond 8000 nm, with idler spectra exhibiting bandwidths of 140-180 nm across the tuning range. Moreover, the near-IR signal is tunable across 1127-1192 nm, providing up to 37 mW of average power at 1150 nm. Signal pulses, characterised using intensity autocorrelation, have durations of 260-320 fs, with corresponding time-bandwidth product of ΔυΔτ 1. The idler and signal output exhibit a TEM00 spatial profile with single-peak Gaussian distribution. With an equivalent spectral brightness of 6.68×1020 photons s-1 mm-2 sr-1 0.1% BW-1, this OPO represents a viable table-top alternative to synchrotron and supercontinuum sources for deep-IR applications in spectroscopy, metrology and medical diagnostics.

Channel Temperature Estimates for Microwave AlGaN/GaN Power HEMTS on SiC and Sapphire

NASA Technical Reports Server (NTRS)

Freeman, Jon C.

2003-01-01

A simple technique to estimate the channel temperature of a generic AlGaN/GaN HEMTs on SiC or Sapphire, while incorporating temperature dependence of the thermal conductivity is presented. The procedure is validated b y comparing it's predictions with the experimentally measured temperatures in devices presented in three recently published articles.

Nanoscale Substances on the TSCA Inventory

EPA Pesticide Factsheets

This document is to help the regulated community comply with the requirements of the Toxic Substances Control Act (TSCA) Section 5 Premanufacturing Notice (PMN) Program for nanoscale chemical substances.

Direct Probing of Polarization Charge at Nanoscale Level

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kwon, Owoong; Seol, Daehee; Lee, Dongkyu

Ferroelectric materials possess spontaneous polarization that can be used for multiple applications. Owing to a long-term development of reducing the sizes of devices, the preparation of ferroelectric materials and devices is entering the nanometer-scale regime. In order to evaluate the ferroelectricity, there is a need to investigate the polarization charge at the nanoscale. Nonetheless, it is generally accepted that the detection of polarization charges using a conventional conductive atomic force microscopy (CAFM) without a top electrode is not feasible because the nanometer-scale radius of an atomic force microscopy (AFM) tip yields a very low signal-to-noise ratio. But, the detection ismore » unrelated to the radius of an AFM tip and, in fact, a matter of the switched area. In this work, the direct probing of the polarization charge at the nanoscale is demonstrated using the positive-up-negative-down method based on the conventional CAFM approach without additional corrections or circuits to reduce the parasitic capacitance. The polarization charge densities of 73.7 and 119.0 µC cm -2 are successfully probed in ferroelectric nanocapacitors and thin films, respectively. The results we obtained show the feasibility of the evaluation of polarization charge at the nanoscale and provide a new guideline for evaluating the ferroelectricity at the nanoscale.« less

Two Wavelength Ti:sapphire Laser for Ozone DIAL Measurements from Aircraft

NASA Technical Reports Server (NTRS)

Situ, Wen; DeYoung, Russel J.

1998-01-01

Laser remote sensing of ozone from aircraft has proven to be a valuable technique for understanding the distribution and dynamics of ozone in the atmosphere. Presently the differential absorption lidar (DIAL) technique, using dual ND:YAG lasers that are doubled to pump dye lasers which in turn are doubled into the UV for the "on" and "off' line lasers, is used on either the NASA DC-8 or P-3 aircraft. Typically, the laser output for each line is 40-mJ and this is split into two beams, one looking up and the other downward, each beam having about 20-mJ. The residual ND:YAG (1.06 micron) and dye laser energies are also transmitted to obtain information on the atmospheric aerosols. While this system has operated well, there are several system characteristics that make the system less than ideal for aircraft operations. The system, which uses separate "on" and "off" line lasers, is quite large and massive requiring valuable aircraft volume and weight. The dye slowly degrades with time requiring replacement. The laser complexity requires a number of technical people to maintain the system performance. There is also the future interest in deploying an ozone DIAL system in an Unpiloted Atmospheric Vehicle (UAV) which would require a total payload mass of less than 150 kg and power requirement of less than 1500 W. A laser technology has emerged that could potentially provide significant enhancements over the present ozone DIAL system. The flashlamp pumped Ti:sapphire laser system is an emerging technology that could reduce the mass and volume over the present system and also provide a system with fewer conversion steps, reducing system complexity. This paper will discuss preliminary results from a flashlamp-pumped Ti:sapphire laser constructed as a radiation source for a UV DIAL system to measure ozone.

Broadband dielectric characterization of sapphire/TiOx/Ba₀.₃Sr₀.₇TiO₃ (111)-oriented thin films for the realization of a tunable interdigitated capacitor.

PubMed

Ghalem, Areski; Ponchel, Freddy; Remiens, Denis; Legier, Jean-Francois; Lasri, Tuami

2013-05-01

A complete microwave characterization up to 67 GHz using specific coplanar waveguides was performed to determine the dielectric properties (permittivity, losses, and tunability) of sapphire/TiOx/Ba0.3Sr0.7TiO3 (BST) (111)-oriented thin films. To that end, BaxSr1-xTiO3 thin films were deposited by RF magnetron sputtering on sapphire (0001) substrate. To control the preferred (111) orientation, a TiOx buffer layer was deposited on sapphire. According to the detailed knowledge of the material properties, it has been possible to conceive, fabricate, and test interdigitated capacitors, the basic element for future microwave tunable applications. Retention of capacitive behavior up to 67 GHz and a tunability of 32% at 67 GHz at an applied voltage of 30 V (150 kV/cm) were observed. The Q-factor remains greater than 30 over the entire frequency band. The possibility of a complete characterization of the material for the realization of high-performance interdigitated capacitors opens the door to microwave device fabrication.

Nanoscale device architectures derived from biological assemblies: The case of tobacco mosaic virus and (apo)ferritin

NASA Astrophysics Data System (ADS)

Calò, Annalisa; Eiben, Sabine; Okuda, Mitsuhiro; Bittner, Alexander M.

2016-03-01

Virus particles and proteins are excellent examples of naturally occurring structures with well-defined nanoscale architectures, for example, cages and tubes. These structures can be employed in a bottom-up assembly strategy to fabricate repetitive patterns of hybrid organic-inorganic materials. In this paper, we review methods of assembly that make use of protein and virus scaffolds to fabricate patterned nanostructures with very high spatial control. We chose (apo)ferritin and tobacco mosaic virus (TMV) as model examples that have already been applied successfully in nanobiotechnology. Their interior space and their exterior surfaces can be mineralized with inorganic layers or nanoparticles. Furthermore, their native assembly abilities can be exploited to generate periodic architectures for integration in electrical and magnetic devices. We introduce the state of the art and describe recent advances in biomineralization techniques, patterning and device production with (apo)ferritin and TMV.

Hybrid Physical-Chemical Vapor Deposition of Bi2Se3 Thin films on Sapphire

NASA Astrophysics Data System (ADS)

Brom, Joseph; Ke, Yue; Du, Renzhong; Gagnon, Jarod; Li, Qi; Redwing, Joan

2012-02-01

High quality thin films of topological insulators continue to garner much interest. We report on the growth of highly-oriented thin films of Bi2Se3 on c-plane sapphire using hybrid physical-chemical vapor deposition (HPCVD). The HPCVD process utilizes the thermal decomposition of trimethyl bismuth (TMBi) and evaporation of elemental selenium in a hydrogen ambient to deposit Bi2Se3. Growth parameters including TMBi flow rate and decomposition temperature and selenium evaporation temperature were optimized, effectively changing the Bi:Se ratio, to produce high quality films. Glancing angle x- ray diffraction measurements revealed that the films were c-axis oriented on sapphire. Trigonal crystal planes were observed in atomic force microscopy images with an RMS surface roughness of 1.24 nm over an area of 2μmx2μm. Variable temperature Hall effect measurements were also carried out on films that were nominally 50-70 nm thick. Over the temperature range from 300K down to 4.2K, the carrier concentration remained constant at approximately 6x10^18 cm-3 while the mobility increased from 480 cm^2/Vs to 900 cm^2/Vs. These results demonstrate that the HPCVD technique can be used to deposit Bi2Se3 films with structural and electrical properties comparable to films produced by molecular beam epitaxy.

Materials processing by use of a Ti:Sapphire laser with automatically-adjustable pulse duration

NASA Astrophysics Data System (ADS)

Kamata, M.; Imahoko, T.; Ozono, K.; Obara, M.

We have developed an automatic pulsewidth-adjustable femtosecond Ti:Sapphire laser system that can generate an output of 50 fs-1 ps in duration, and sub-mJ/pulse at a repetition rate of 1 kpps. The automatic pulse compressor enables one to control the pulsewidth in the range of 50 fs-1 ps by use of a personal computer (PC). The compressor can change the distance in-between and the tilt angle of the grating pairs by use of two stepping motors and two piezo-electric transducer(PZT) driven actuators, respectively. Both are controlled by a PC. Therefore, not only control of the pulsewidth, but also of the optical chirp becomes easy. By use of this femtosecond laser system, we fabricated a waveguide in fused quartz. The numerical aperture is chosen to 0.007 to loosely focus the femtosecond laser. The fabricated waveguides are well controllable by the incident laser pulsewidth. We also demonstrated the ablation processing of hydroxyapatite (Ca10(PO4)6(OH)2), which is a key component of human tooth and human bone for orthopedics and dentistry. With pulsewidth tunable output from 50 fs through 2 ps at 1 kpps, the chemical content of calcium and phosphorus is kept unchanged before and after 50-fs-2-ps laser ablation. We also demonstrated the precise ablation processing of human tooth enamel with 2 ps Ti:Sapphire laser.

Carrier-envelope phase dynamics and noise analysis in octave-spanning Ti:sapphire lasers.

PubMed

Matos, Lia; Mücke, Oliver D; Chen, Jian; Kärtner, Franz X

2006-03-20

We investigate the carrier-envelope phase dynamics of octave-spanning Ti:sapphire lasers and perform a complete noise analysis of the carrier-envelope phase stabilization. We model the effect of the laser dynamics on the residual carrier-envelope phase noise by deriving a transfer function representation of the octave-spanning frequency comb. The modelled phase noise and the experimental results show excellent agreement. This greatly enhances our capability of predicting the dependence of the residual carrier-envelope phase noise on the feedback loop filter, the carrier-envelope frequency control mechanism and the pump laser used.

Systems engineering at the nanoscale

NASA Astrophysics Data System (ADS)

Benkoski, Jason J.; Breidenich, Jennifer L.; Wei, Michael C.; Clatterbaughi, Guy V.; Keng, Pei Yuin; Pyun, Jeffrey

2012-06-01

Nanomaterials have provided some of the greatest leaps in technology over the past twenty years, but their relatively early stage of maturity presents challenges for their incorporation into engineered systems. Perhaps even more challenging is the fact that the underlying physics at the nanoscale often run counter to our physical intuition. The current state of nanotechnology today includes nanoscale materials and devices developed to function as components of systems, as well as theoretical visions for "nanosystems," which are systems in which all components are based on nanotechnology. Although examples will be given to show that nanomaterials have indeed matured into applications in medical, space, and military systems, no complete nanosystem has yet been realized. This discussion will therefore focus on systems in which nanotechnology plays a central role. Using self-assembled magnetic artificial cilia as an example, we will discuss how systems engineering concepts apply to nanotechnology.

Quantifying Nanoscale Order in Amorphous Materials via Fluctuation Electron Microscopy

ERIC Educational Resources Information Center

Bogle, Stephanie Nicole

2009-01-01

Fluctuation electron microscopy (FEM) has been used to study the nanoscale order in various amorphous materials. The method is explicitly sensitive to 3- and 4-body atomic correlation functions in amorphous materials; this is sufficient to establish the existence of structural order on the nanoscale, even when the radial distribution function…

Charge separation at nanoscale interfaces: energy-level alignment including two-quasiparticle interactions.

PubMed

Li, Huashan; Lin, Zhibin; Lusk, Mark T; Wu, Zhigang

2014-10-21

The universal and fundamental criteria for charge separation at interfaces involving nanoscale materials are investigated. In addition to the single-quasiparticle excitation, all the two-quasiparticle effects including exciton binding, Coulomb stabilization, and exciton transfer are considered, which play critical roles on nanoscale interfaces for optoelectronic applications. We propose a scheme allowing adding these two-quasiparticle interactions on top of the single-quasiparticle energy level alignment for determining and illuminating charge separation at nanoscale interfaces. Employing the many-body perturbation theory based on Green's functions, we quantitatively demonstrate that neglecting or simplifying these crucial two-quasiparticle interactions using less accurate methods is likely to predict qualitatively incorrect charge separation behaviors at nanoscale interfaces where quantum confinement dominates.

A Thermal Diode Based on Nanoscale Thermal Radiation.

PubMed

Fiorino, Anthony; Thompson, Dakotah; Zhu, Linxiao; Mittapally, Rohith; Biehs, Svend-Age; Bezencenet, Odile; El-Bondry, Nadia; Bansropun, Shailendra; Ben-Abdallah, Philippe; Meyhofer, Edgar; Reddy, Pramod

2018-05-23

In this work we demonstrate thermal rectification at the nanoscale between doped Si and VO 2 surfaces. Specifically, we show that the metal-insulator transition of VO 2 makes it possible to achieve large differences in the heat flow between Si and VO 2 when the direction of the temperature gradient is reversed. We further show that this rectification increases at nanoscale separations, with a maximum rectification coefficient exceeding 50% at ∼140 nm gaps and a temperature difference of 70 K. Our modeling indicates that this high rectification coefficient arises due to broadband enhancement of heat transfer between metallic VO 2 and doped Si surfaces, as compared to narrower-band exchange that occurs when VO 2 is in its insulating state. This work demonstrates the feasibility of accomplishing near-field-based rectification of heat, which is a key component for creating nanoscale radiation-based information processing devices and thermal management approaches.

Exploring Ultimate Water Capillary Evaporation in Nanoscale Conduits.

PubMed

Li, Yinxiao; Alibakhshi, Mohammad Amin; Zhao, Yihong; Duan, Chuanhua

2017-08-09

Capillary evaporation in nanoscale conduits is an efficient heat/mass transfer strategy that has been widely utilized by both nature and mankind. Despite its broad impact, the ultimate transport limits of capillary evaporation in nanoscale conduits, governed by the evaporation/condensation kinetics at the liquid-vapor interface, have remained poorly understood. Here we report experimental study of the kinetic limits of water capillary evaporation in two dimensional nanochannels using a novel hybrid channel design. Our results show that the kinetic-limited evaporation fluxes break down the limits predicated by the classical Hertz-Knudsen equation by an order of magnitude, reaching values up to 37.5 mm/s with corresponding heat fluxes up to 8500 W/cm 2 . The measured evaporation flux increases with decreasing channel height and relative humidity but decreases as the channel temperature decreases. Our findings have implications for further understanding evaporation at the nanoscale and developing capillary evaporation-based technologies for both energy- and bio-related applications.

Light refraction in sapphire plates with a variable angle of crystal optical axis to the surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vetrov, V. N., E-mail: vasvetrov@mail.ru; Ignatenkov, B. A.

2013-05-15

The modification of sapphire by inhomogeneous plastic deformation makes it possible to obtain plates with a variable angle of inclination of the crystal optical axis to the plate surface. The refraction of light in this plate at perpendicular and oblique incidence of a parallel beam of rays is considered. The algorithm of calculating the refractive index of extraordinary ray and the birefringence is proposed.

Ultrafast nanoscale imaging using high order harmonic generation (Conference Presentation)

NASA Astrophysics Data System (ADS)

Merdji, Hamed

2017-05-01

Ultrafast coherent diffraction using soft and hard X-rays is actually revolutionizing imaging science thanks to new sources recently available. This powerful technique extends standard X-ray diffraction towards imaging of non-crystalline objects and leads actually to a strong impact in physics, chemistry and biology. New ultrashort pulses recently available hold the promise of watching matter evolving with unprecedented space and time resolution. Femtosecond coherent and intense radiation in the soft X-ray (λ = 10-40 nm) is currently produced in our laboratory, from highly non linear frequency conversion (high harmonic generation). A high intensity UV-X coherent beam is obtained using a loose focusing geometry, which allows coupling a very high amount of Ti:Sapphire laser system energy in the HHG process. Using a long gas cell and a long focal length lens, the emitting volume can be increased by orders of magnitude compared to standard HHG set-ups. This approach, allows reaching up to 1x1011 photons per shot for the 25th harmonic (λ=32nm). We have already demonstrated nanoscale imaging in a single shot mode reaching 70 nm spatial resolution and 20 femtoseconds snapshot [1]. We then implemented a recently proposed holographic technique using extended references. This technique, easy to implement, allows a direct non iterative image reconstruction. In the single shot regime, we demonstrated a spatial resolution of 110nm [2].This opens fascinating perspectives in imaging dynamical phenomena to be spread over a large scientific community. I will present recent results in the investigation of femtosecond phase spin-reversals of magnetic nano-domains [3]. Finally, I will report on recent development on noise sensitivity of the technique and perspectives in attosecond coherent imaging [4]. [1] A. Ravasio et al., Physical Review Letters 103, 028104 (2009). [2] D. Gauthier et al., Physical Review Letters 105, 093901 (2010). [3] Vodungbo et al., Nature Communications 3

Mapping photovoltaic performance with nanoscale resolution

DOE PAGES

Kutes, Yasemin; Aguirre, Brandon A.; Bosse, James L.; ...

2015-10-16

Photo-conductive AFM spectroscopy (‘pcAFMs’) is proposed as a high-resolution approach for investigating nanostructured photovoltaics, uniquely providing nanoscale maps of photovoltaic (PV) performance parameters such as the short circuit current, open circuit voltage, maximum power, or fill factor. The method is demonstrated with a stack of 21 images acquired during in situ illumination of micropatterned polycrystalline CdTe/CdS, providing more than 42,000 I/V curves spatially separated by ~5 nm. For these CdTe/CdS microcells, the calculated photoconduction ranges from 0 to 700 picoSiemens (pS) upon illumination with ~1.6 suns, depending on location and biasing conditions. Mean short circuit currents of 2 pA, maximummore » powers of 0.5 pW, and fill factors of 30% are determined. The mean voltage at which the detected photocurrent is zero is determined to be 0.7 V. Significantly, enhancements and reductions in these more commonly macroscopic PV performance metrics are observed to correlate with certain grains and grain boundaries, and are confirmed to be independent of topography. Furthermore, these results demonstrate the benefits of nanoscale resolved PV functional measurements, reiterate the importance of microstructural control down to the nanoscale for 'PV devices, and provide a widely applicable new approach for directly investigating PV materials.« less

A Look Inside Argonne's Center for Nanoscale Materials

ScienceCinema

Divan, Ralu; Rosenthal, Dan; Rose, Volker; Wai Hla

2018-05-23

At a very small, or "nano" scale, materials behave differently. The study of nanomaterials is much more than miniaturization - scientists are discovering how changes in size change a material's properties. From sunscreen to computer memory, the applications of nanoscale materials research are all around us. Researchers at Argonne's Center for Nanoscale Materials are creating new materials, methods and technologies to address some of the world's greatest challenges in energy security, lightweight but durable materials, high-efficiency lighting, information storage, environmental stewardship and advanced medical devices.

Geometric rectification for nanoscale vibrational energy harvesting

NASA Astrophysics Data System (ADS)

Bustos-Marún, Raúl A.

2018-02-01

In this work, we present a mechanism that, based on quantum-mechanical principles, allows one to recover kinetic energy at the nanoscale. Our premise is that very small mechanical excitations, such as those arising from sound waves propagating through a nanoscale system or similar phenomena, can be quite generally converted into useful electrical work by applying the same principles behind conventional adiabatic quantum pumping. The proposal is potentially useful for nanoscale vibrational energy harvesting where it can have several advantages. The most important one is that it avoids the use of classical rectification mechanisms as it is based on what we call geometric rectification. We show that this geometric rectification results from applying appropriate but quite general initial conditions to damped harmonic systems coupled to electronic reservoirs. We analyze an analytically solvable example consisting of a wire suspended over permanent charges where we find the condition for maximizing the pumped charge. We also studied the effects of coupling the system to a capacitor including the effect of current-induced forces and analyzing the steady-state voltage of operation. Finally, we show how quantum effects can be used to boost the performance of the proposed device.

Stacking metal nano-patterns and fabrication of moth-eye structure

NASA Astrophysics Data System (ADS)

Taniguchi, Jun

2018-01-01

Nanoimprint lithography (NIL) can be used as a tool for three-dimensional nanoscale fabrication. In particular, complex metal pattern structures in polymer material are demanded as plasmonic effect devices and metamaterials. To fabricate of metallic color filter, we used silver ink and NIL techniques. Metallic color filter was composed of stacking of nanoscale silver disc patterns and polymer layers, thus, controlling of polymer layer thickness is necessary. To control of thickness of polymer layer, we used spin-coating of UV-curable polymer and NIL. As a result, ten stacking layers with 1000 nm layer thickness was obtained and red color was observed. Ultraviolet nanoimprint lithography (UV-NIL) is the most effective technique for mass fabrication of antireflection structure (ARS) films. For the use of ARS films in mobile phones and tablet PCs, which are touch-screen devices, it is important to protect the films from fingerprints and dust. In addition, as the nanoscale ARS that is touched by the hand is fragile, it is very important to obtain a high abrasion resistance. To solve these problems, a UV-curable epoxy resin has been developed that exhibits antifouling properties and high hardness. The high abrasion resistance ARS films are shown to withstand a load of 250 g/cm2 in the steel wool scratch test, and the reflectance is less than 0.4%.

Nanoscale chirality in metal and semiconductor nanoparticles

PubMed Central

Thomas, K. George

2016-01-01

The field of chirality has recently seen a rejuvenation due to the observation of chirality in inorganic nanomaterials. The advancements in understanding the origin of nanoscale chirality and the potential applications of chiroptical nanomaterials in the areas of optics, catalysis and biosensing, among others, have opened up new avenues toward new concepts and design of novel materials. In this article, we review the concept of nanoscale chirality in metal nanoclusters and semiconductor quantum dots, then focus on recent experimental and theoretical advances in chiral metal nanoparticles and plasmonic chirality. Selected examples of potential applications and an outlook on the research on chiral nanomaterials are additionally provided. PMID:27752651

Nanoscale chirality in metal and semiconductor nanoparticles.

PubMed

Kumar, Jatish; Thomas, K George; Liz-Marzán, Luis M

2016-10-18

The field of chirality has recently seen a rejuvenation due to the observation of chirality in inorganic nanomaterials. The advancements in understanding the origin of nanoscale chirality and the potential applications of chiroptical nanomaterials in the areas of optics, catalysis and biosensing, among others, have opened up new avenues toward new concepts and design of novel materials. In this article, we review the concept of nanoscale chirality in metal nanoclusters and semiconductor quantum dots, then focus on recent experimental and theoretical advances in chiral metal nanoparticles and plasmonic chirality. Selected examples of potential applications and an outlook on the research on chiral nanomaterials are additionally provided.

16 CFR 23.23 - Misuse of the words “ruby,” “sapphire,” “emerald,” “topaz,” “stone,” “birthstone,” “gemstone,” etc.

Code of Federal Regulations, 2011 CFR

2011-01-01

... PEWTER INDUSTRIES § 23.23 Misuse of the words “ruby,” “sapphire,” “emerald,” “topaz,” “stone...,” “emerald,” “topaz,” or the name of any other precious or semi-precious stone to describe any product that... “ruby,” “sapphire,” “emerald,” “topaz,” or the name of any other precious or semi-precious stone, or the...

16 CFR 23.23 - Misuse of the words “ruby,” “sapphire,” “emerald,” “topaz,” “stone,” “birthstone,” “gemstone,” etc.

Code of Federal Regulations, 2013 CFR

2013-01-01

... PEWTER INDUSTRIES § 23.23 Misuse of the words “ruby,” “sapphire,” “emerald,” “topaz,” “stone...,” “emerald,” “topaz,” or the name of any other precious or semi-precious stone to describe any product that... “ruby,” “sapphire,” “emerald,” “topaz,” or the name of any other precious or semi-precious stone, or the...

16 CFR 23.23 - Misuse of the words “ruby,” “sapphire,” “emerald,” “topaz,” “stone,” “birthstone,” “gemstone,” etc.

Code of Federal Regulations, 2010 CFR

2010-01-01

... PEWTER INDUSTRIES § 23.23 Misuse of the words “ruby,” “sapphire,” “emerald,” “topaz,” “stone...,” “emerald,” “topaz,” or the name of any other precious or semi-precious stone to describe any product that... “ruby,” “sapphire,” “emerald,” “topaz,” or the name of any other precious or semi-precious stone, or the...

16 CFR 23.23 - Misuse of the words “ruby,” “sapphire,” “emerald,” “topaz,” “stone,” “birthstone,” “gemstone,” etc.

Code of Federal Regulations, 2012 CFR

2012-01-01

... PEWTER INDUSTRIES § 23.23 Misuse of the words “ruby,” “sapphire,” “emerald,” “topaz,” “stone...,” “emerald,” “topaz,” or the name of any other precious or semi-precious stone to describe any product that... “ruby,” “sapphire,” “emerald,” “topaz,” or the name of any other precious or semi-precious stone, or the...

16 CFR 23.23 - Misuse of the words “ruby,” “sapphire,” “emerald,” “topaz,” “stone,” “birthstone,” “gemstone,” etc.

Code of Federal Regulations, 2014 CFR

2014-01-01

... PEWTER INDUSTRIES § 23.23 Misuse of the words “ruby,” “sapphire,” “emerald,” “topaz,” “stone...,” “emerald,” “topaz,” or the name of any other precious or semi-precious stone to describe any product that... “ruby,” “sapphire,” “emerald,” “topaz,” or the name of any other precious or semi-precious stone, or the...

Manufacturing at the Nanoscale. Report of the National Nanotechnology Initiative Workshops, 2002-2004

DTIC Science & Technology

2007-01-01

positioning and assembling? • Do nanoscale properties remain once the nanostructures are integrated up to the microscale? • How do we measure...viii Manufacturing at the Nanoscale 1 1. VISION Employing the novel properties and processes that are associated with the nanoscale—in the...Theory, modeling, and simulation software are being developed to investigate nanoscale material properties and synthesis of macromolecular systems with

Reduction of Thermal Conductivity by Nanoscale 3D Phononic Crystal

PubMed Central

Yang, Lina; Yang, Nuo; Li, Baowen

2013-01-01

We studied how the period length and the mass ratio affect the thermal conductivity of isotopic nanoscale three-dimensional (3D) phononic crystal of Si. Simulation results by equilibrium molecular dynamics show isotopic nanoscale 3D phononic crystals can significantly reduce the thermal conductivity of bulk Si at high temperature (1000 K), which leads to a larger ZT than unity. The thermal conductivity decreases as the period length and mass ratio increases. The phonon dispersion curves show an obvious decrease of group velocities in 3D phononic crystals. The phonon's localization and band gap is also clearly observed in spectra of normalized inverse participation ratio in nanoscale 3D phononic crystal. PMID:23378898

Nanoscale thermal transport. II. 2003-2012

NASA Astrophysics Data System (ADS)

Cahill, David G.; Braun, Paul V.; Chen, Gang; Clarke, David R.; Fan, Shanhui; Goodson, Kenneth E.; Keblinski, Pawel; King, William P.; Mahan, Gerald D.; Majumdar, Arun; Maris, Humphrey J.; Phillpot, Simon R.; Pop, Eric; Shi, Li

2014-03-01

A diverse spectrum of technology drivers such as improved thermal barriers, higher efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic recording, thermal management of nanoscale electronics, and nanoparticles for thermal medical therapies are motivating studies of the applied physics of thermal transport at the nanoscale. This review emphasizes developments in experiment, theory, and computation in the past ten years and summarizes the present status of the field. Interfaces become increasingly important on small length scales. Research during the past decade has extended studies of interfaces between simple metals and inorganic crystals to interfaces with molecular materials and liquids with systematic control of interface chemistry and physics. At separations on the order of ˜ 1 nm , the science of radiative transport through nanoscale gaps overlaps with thermal conduction by the coupling of electronic and vibrational excitations across weakly bonded or rough interfaces between materials. Major advances in the physics of phonons include first principles calculation of the phonon lifetimes of simple crystals and application of the predicted scattering rates in parameter-free calculations of the thermal conductivity. Progress in the control of thermal transport at the nanoscale is critical to continued advances in the density of information that can be stored in phase change memory devices and new generations of magnetic storage that will use highly localized heat sources to reduce the coercivity of magnetic media. Ultralow thermal conductivity—thermal conductivity below the conventionally predicted minimum thermal conductivity—has been observed in nanolaminates and disordered crystals with strong anisotropy. Advances in metrology by time-domain thermoreflectance have made measurements of the thermal conductivity of a thin layer with micron-scale spatial resolution relatively routine. Scanning thermal microscopy and thermal

Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Kyuseung; Chae, Sooryong; Jang, Jongjin

2016-04-15

In this study, self-assembled inclined (1-10-3)-oriented GaN nanorods (NRs) were grown on nanoimprinted (10-10) m-sapphire substrates using catalyst-free metal-organic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5° to the [10-10]{sub sapp} direction. Specifically, the GaN NRs grew in a single inclined direction to the [11-20]{sub sapp}. Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclinedmore » angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3) GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking fault-related defects using high-resolution transmission electron microscopy.« less

Nanoscale NMR spectroscopy and imaging of multiple nuclear species.

PubMed

DeVience, Stephen J; Pham, Linh M; Lovchinsky, Igor; Sushkov, Alexander O; Bar-Gill, Nir; Belthangady, Chinmay; Casola, Francesco; Corbett, Madeleine; Zhang, Huiliang; Lukin, Mikhail; Park, Hongkun; Yacoby, Amir; Walsworth, Ronald L

2015-02-01

Nuclear magnetic resonance (NMR) spectroscopy and magnetic resonance imaging (MRI) provide non-invasive information about multiple nuclear species in bulk matter, with wide-ranging applications from basic physics and chemistry to biomedical imaging. However, the spatial resolution of conventional NMR and MRI is limited to several micrometres even at large magnetic fields (>1 T), which is inadequate for many frontier scientific applications such as single-molecule NMR spectroscopy and in vivo MRI of individual biological cells. A promising approach for nanoscale NMR and MRI exploits optical measurements of nitrogen-vacancy (NV) colour centres in diamond, which provide a combination of magnetic field sensitivity and nanoscale spatial resolution unmatched by any existing technology, while operating under ambient conditions in a robust, solid-state system. Recently, single, shallow NV centres were used to demonstrate NMR of nanoscale ensembles of proton spins, consisting of a statistical polarization equivalent to ∼100-1,000 spins in uniform samples covering the surface of a bulk diamond chip. Here, we realize nanoscale NMR spectroscopy and MRI of multiple nuclear species ((1)H, (19)F, (31)P) in non-uniform (spatially structured) samples under ambient conditions and at moderate magnetic fields (∼20 mT) using two complementary sensor modalities.

Synthesis of high quality graphene on capped (1 1 1) Cu thin films obtained by high temperature secondary grain growth on c-plane sapphire substrates

NASA Astrophysics Data System (ADS)

Kim, Youngwoo; Moyen, Eric; Yi, Hemian; Avila, José; Chen, Chaoyu; Asensio, Maria C.; Lee, Young Hee; Pribat, Didier

2018-07-01

We propose a novel growth technique, in which graphene is synthesized on capped Cu thin films deposited on c-plane sapphire. The cap is another sapphire plate which is just laid upon the Cu thin film, in direct contact with it. Thanks to this ‘contact cap’, Cu evaporation can be suppressed at high temperature and the 400 nm-thick Cu films can be annealed above 1000 °C, resulting in (1 1 1)-oriented grains of millimeter size. Following this high temperature annealing, graphene is grown by chemical vapor deposition during the same pump-down operation, without removing the contact cap. The orientation and doping type of the as-grown graphene were first studied, using low energy electron diffraction, as well as high resolution angle-resolved photoemission spectroscopy. In particular, the orientation relationships between the graphene and copper thin film with respect to the sapphire substrate were precisely determined. We find that the graphene sheets exhibit a minimal rotational disorder, with ~90% of the grains aligned along the copper high symmetry direction. Detailed transport measurements were also performed using field-effect transistor structures. Carrier mobility values as high as 8460 cm2 V‑1 s‑1 have been measured on top gate transistors fabricated directly on the sapphire substrate, by etching the Cu film from underneath the graphene sheets. This is by far the best carrier mobility value obtained to date for graphene sheets synthesized on a thin film-type metal substrate.

Bottom-up nanoconstruction by the welding of individual metallic nanoobjects using nanoscale solder.

PubMed

Peng, Yong; Cullis, Tony; Inkson, Beverley

2009-01-01

We report that individual metallic nanowires and nanoobjects can be assembled and welded together into complex nanostructures and conductive circuits by a new nanoscale electrical welding technique using nanovolumes of metal solder. At the weld sites, nanoscale volumes of a chosen metal are deposited using a sacrificial nanowire, which ensures that the nanoobjects to be bonded retain their structural integrity. We demonstrate by welding both similar and dissimilar materials that the use of nanoscale solder is clean, controllable, and reliable and ensures both mechanically strong and electrically conductive contacts. Nanoscale weld resistances of just 20Omega are achieved by using Sn solder. Precise engineering of nanowelds by this technique, including the chemical flexibility of the nanowire solder, and high spatial resolution of the nanowelding method, should result in research applications including fabrication of nanosensors and nanoelectronics constructed from a small number of nanoobjects, and repair of interconnects and failed nanoscale electronics.

Nanoscale volcanoes: accretion of matter at ion-sculpted nanopores.

PubMed

Mitsui, Toshiyuki; Stein, Derek; Kim, Young-Rok; Hoogerheide, David; Golovchenko, J A

2006-01-27

We demonstrate the formation of nanoscale volcano-like structures induced by ion-beam irradiation of nanoscale pores in freestanding silicon nitride membranes. Accreted matter is delivered to the volcanoes from micrometer distances along the surface. Volcano formation accompanies nanopore shrinking and depends on geometrical factors and the presence of a conducting layer on the membrane's back surface. We argue that surface electric fields play an important role in accounting for the experimental observations.

Enhanced reactivity of nanoscale iron particles through a vacuum annealing process

NASA Astrophysics Data System (ADS)

Riba, Olga; Barnes, Robert J.; Scott, Thomas B.; Gardner, Murray N.; Jackman, Simon A.; Thompson, Ian P.

2011-10-01

A reactivity study was undertaken to compare and assess the rate of dechlorination of chlorinated aliphatic hydrocarbons (CAHs) by annealed and non-annealed nanoscale iron particles. The current study aims to resolve the uncertainties in recently published work studying the effect of the annealing process on the reduction capability of nanoscale Fe particles. Comparison of the normalized rate constants (m2/h/L) obtained for dechlorination reactions of trichloroethene (TCE) and cis-1,2-dichloroethene (cis-1,2-DCE) indicated that annealing nanoscale Fe particles increases their reactivity 30-fold. An electron transfer reaction mechanism for both types of nanoscale particles was found to be responsible for CAH dechlorination, rather than a reduction reaction by activated H2 on the particle surface (i.e., hydrogenation, hydrogenolysis). Surface analysis of the particulate material using X-ray diffraction (XRD) and transmission electron microscopy (TEM) together with surface area measurement by Brunauer, Emmett, Teller (BET) indicate that the vacuum annealing process decreases the surface area and increases crystallinity. BET surface area analysis recorded a decrease in nanoscale Fe particle surface area from 19.0 to 4.8 m2/g and crystallite dimensions inside the particle increased from 8.7 to 18.2 nm as a result of annealing.

Observed circuit limits to time resolution in correlation measurements with Si-on-sapphire, GaAs, and InP picosecond photoconductors

NASA Astrophysics Data System (ADS)

Hammond, R. B.; Paulter, N. G.; Wagner, R. S.

1984-08-01

Cross-correlation measurements of the response of photoconductor pulsers and sampling gates excited by a femtosecond laser are reported. The photoconductors were fabricated in microstrip transmission line structures on Si-on-sapphire, semiinsulating GaAs, and semiinsulating InP wafers. The photoconductor sampling gates were ion beam-damaged to produce short carrier lifetimes (less than 3 ps in one case). Damage was introduced with 6 MeV Ne-20 on the Si-on-sapphire, 2 MeV H-2 on the GaAs, and 2 MeV He-4 on the InP. Doses in the range 10 to the 12th - 10 to the 15th were used. Results show circuit limits to the time resolution in correlation measurements from two sources: (1) RC time constants due to photoconductor gap capacitance and transmission line characteristic impedance and (2) dispersion in microstrip transmission lines.

High-quality nonpolar a-plane GaN epitaxial films grown on r-plane sapphire substrates by the combination of pulsed laser deposition and metal–organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Yang, Weijia; Zhang, Zichen; Wang, Wenliang; Zheng, Yulin; Wang, Haiyan; Li, Guoqiang

2018-05-01

High-quality a-plane GaN epitaxial films have been grown on r-plane sapphire substrates by the combination of pulsed laser deposition (PLD) and metal–organic chemical vapor deposition (MOCVD). PLD is employed to epitaxial growth of a-plane GaN templates on r-plane sapphire substrates, and then MOCVD is used. The nonpolar a-plane GaN epitaxial films with relatively small thickness (2.9 µm) show high quality, with the full-width at half-maximum values of GaN(11\\bar{2}0) along [1\\bar{1}00] direction and GaN(10\\bar{1}1) of 0.11 and 0.30°, and a root-mean-square surface roughness of 1.7 nm. This result is equivalent to the quality of the films grown by MOCVD with a thickness of 10 µm. This work provides a new and effective approach for achieving high-quality nonpolar a-plane GaN epitaxial films on r-plane sapphire substrates.

Phototoxicity and Dosimetry of Nano-scale Titanium Dioxide in Aquatic Organisms

EPA Science Inventory

We have been testing nanoscale TiO2 (primarily Evonik P25) in acute exposures to identify and quantify its phototoxicity under solar simulated radiation (SSR), and to develop dose metrics reflective of both nano-scale properties and the photon component of its potency. Several e...

Nanoscale Footprints of Self-Running Gallium Droplets on GaAs Surface

PubMed Central

Wu, Jiang; Wang, Zhiming M.; Li, Alvason Z.; Benamara, Mourad; Li, Shibin; Salamo, Gregory J.

2011-01-01

In this work, the nanoscale footprints of self-driven liquid gallium droplet movement on a GaAs (001) surface will be presented and analyzed. The nanoscale footprints of a primary droplet trail and ordered secondary droplets along primary droplet trails are observed on the GaAs surface. A well ordered nanoterrace from the trail is left behind by a running droplet. In addition, collision events between two running droplets are investigated. The exposed fresh surface after a collision demonstrates a superior evaporation property. Based on the observation of droplet evolution at different stages as well as nanoscale footprints, a schematic diagram of droplet evolution is outlined in an attempt to understand the phenomenon of stick-slip droplet motion on the GaAs surface. The present study adds another piece of work to obtain the physical picture of a stick-slip self-driven mechanism in nanoscale, bridging nano and micro systems. PMID:21673965

Method for making alignment-enhancing feed-through conductors for stackable silicon-on-sapphire

NASA Technical Reports Server (NTRS)

Anthony, Thomas R. (Inventor)

1985-01-01

Alignment-enhancing electrically conductive feed-through paths are provided for the high-speed low-loss transfer of electrical signals between integrated circuits of a plurality of silicon-on-sapphire bodies arrayed in a stack. The alignment-enhancing feed-throughs are made by a process of this invention involving the drilling of holes through the body, double-sided sputtering, electroplating, and the filling of the holes with solder by capillary action. The alignment-enhancing feed-throughs are activated by forming a stack of wafers and remelting the solder whereupon the wafers, and the feed-through paths, are pulled into alignment by surface tension forces.

High Electron Mobility in SiGe/Si n-MODFET Structures on Sapphire Substrates

NASA Technical Reports Server (NTRS)

Mueller, Carl H.; Croke, Edward T.; Alterovitz, Samuel A.

2003-01-01

For the first time, SiGe/Si n-Modulation Doped Field Effect Transistors (n-MODFET) structures have been grown on sapphire substrates. Room temperature electron mobility value of 1271 square centimeters N-sec at an electron carrier density (n(sub e) = 1.33x10(exp 12) per square centimeter)) of 1.6 x 10(exp 12) per square centimeter was obtained. At 250 mK, the mobility increases to 13,313 square centimeters/V-sec (n(sub e)=1.33x10(exp 12) per square centimeter)) and Shubnikov-de Haas oscillations appear, showing excellent confinement of the two-dimensional electron gas.

Site location and optical properties of Eu implanted sapphire

NASA Astrophysics Data System (ADS)

Marques, C.; Wemans, A.; Maneira, M. J. P.; Kozanecki, A.; da Silva, R. C.; Alves, E.

2005-10-01

Synthetic colourless transparent (0 0 0 1) sapphire crystals were implanted at room temperature with 100 keV europium ions to fluences up to 1 × 1016 cm-2. Surface damage is observed at low fluences, as seen by Rutherford backscattering spectrometry under channelling conditions. Optical absorption measurements revealed a variety of structures, most probably related to F-type defects characteristic of implantation damage. Thermal treatments in air or in vacuum up to 1000 °C do not produce noticeable changes both in the matrix or the europium profiles. However, the complete recovery of the implantation damage and some redistribution of the europium ions is achieved after annealing at 1300 °C in air. Detailed lattice site location studies performed for various axial directions allowed to assess the damage recovery and the incorporation of the Eu ions into well defined crystallographic sites, possibly in an oxide phase also inferred from optical absorption measurements.

Preface: Charge transport in nanoscale junctions

NASA Astrophysics Data System (ADS)

Albrecht, Tim; Kornyshev, Alexei; Bjørnholm, Thomas

2008-09-01

the molecular level. Nanoscale charge transport experiments in ionic liquids extend the field to high temperatures and to systems with intriguing interfacial potential distributions. Other directions may include dye-sensitized solar cells, new sensor applications and diagnostic tools for the study of surface-bound single molecules. Another motivation for this special issue is thus to highlight activities across different research communities with nanoscale charge transport as a common denominator. This special issue gathers 27 articles by scientists from the United States, Germany, the UK, Denmark, Russia, France, Israel, Canada, Australia, Sweden, Switzerland, the Netherlands, Belgium and Singapore; it gives us a flavour of the current state-of-the-art of this diverse research area. While based on contributions from many renowned groups and institutions, it obviously cannot claim to represent all groups active in this very broad area. Moreover, a number of world-leading groups were unable to take part in this project within the allocated time limit. Nevertheless, we regard the current selection of papers to be representative enough for the reader to draw their own conclusions about the current status of the field. Each paper is original and has its own merit, as all papers in Journal of Physics: Condensed Matter special issues are subjected to the same scrutiny as regular contributions. The Guest Editors have deliberately not defined the specific subjects covered in this issue. These came out logically from the development of this area, for example: 'Traditional' solid state nanojunctions based on adsorbed layers, oxide films or nanowires sandwiched between two electrodes: effects of molecular structure (aromaticity, anchoring groups), symmetry, orientation, dynamics (noise patterns) and current-induced heating. Various 'physical effects': inelastic tunnelling and Coulomb blockade, polaron effects, switching modes, and negative differential resistance; the role of

Nanomoulding of Functional Materials, a Versatile Complementary Pattern Replication Method to Nanoimprinting

PubMed Central

Battaglia, Corsin; Söderström, Karin; Escarré, Jordi; Haug, Franz-Josef; Despeisse, Matthieu; Ballif, Christophe

2013-01-01

We describe a nanomoulding technique which allows low-cost nanoscale patterning of functional materials, materials stacks and full devices. Nanomoulding combined with layer transfer enables the replication of arbitrary surface patterns from a master structure onto the functional material. Nanomoulding can be performed on any nanoimprinting setup and can be applied to a wide range of materials and deposition processes. In particular we demonstrate the fabrication of patterned transparent zinc oxide electrodes for light trapping applications in solar cells. PMID:23380874

Characteristics for electrochemical machining with nanoscale voltage pulses.

PubMed

Lee, E S; Back, S Y; Lee, J T

2009-06-01

Electrochemical machining has traditionally been used in highly specialized fields, such as those of the aerospace and defense industries. It is now increasingly being applied in other industries, where parts with difficult-to-cut material, complex geometry and tribology, and devices of nanoscale and microscale are required. Electric characteristic plays a principal function role in and chemical characteristic plays an assistant function role in electrochemical machining. Therefore, essential parameters in electrochemical machining can be described current density, machining time, inter-electrode gap size, electrolyte, electrode shape etc. Electrochemical machining provides an economical and effective method for machining high strength, high tension and heat-resistant materials into complex shapes such as turbine blades of titanium and aluminum alloys. The application of nanoscale voltage pulses between a tool electrode and a workpiece in an electrochemical environment allows the three-dimensional machining of conducting materials with sub-micrometer precision. In this study, micro probe are developed by electrochemical etching and micro holes are manufactured using these micro probe as tool electrodes. Micro holes and microgroove can be accurately achieved by using nanoscale voltages pulses.

The nanoscale organization of the B lymphocyte membrane☆

PubMed Central

Maity, Palash Chandra; Yang, Jianying; Klaesener, Kathrin; Reth, Michael

2015-01-01

The fluid mosaic model of Singer and Nicolson correctly predicted that the plasma membrane (PM) forms a lipid bi-layer containing many integral trans-membrane proteins. This model also suggested that most of these proteins were randomly dispersed and freely diffusing moieties. Initially, this view of a dynamic and rather unorganized membrane was supported by early observations of the cell surfaces using the light microscope. However, recent studies on the PM below the diffraction limit of visible light (~ 250 nm) revealed that, at nanoscale dimensions, membranes are highly organized and compartmentalized structures. Lymphocytes are particularly useful to study this nanoscale membrane organization because they grow as single cells and are not permanently engaged in cell:cell contacts within a tissue that can influence membrane organization. In this review, we describe the methods that can be used to better study the protein:protein interaction and nanoscale organization of lymphocyte membrane proteins, with a focus on the B cell antigen receptor (BCR). Furthermore, we discuss the factors that may generate and maintain these membrane structures. PMID:25450974

Less strained and more efficient GaN light-emitting diodes with embedded silica hollow nanospheres

PubMed Central

Kim, Jonghak; Woo, Heeje; Joo, Kisu; Tae, Sungwon; Park, Jinsub; Moon, Daeyoung; Park, Sung Hyun; Jang, Junghwan; Cho, Yigil; Park, Jucheol; Yuh, Hwankuk; Lee, Gun-Do; Choi, In-Suk; Nanishi, Yasushi; Han, Heung Nam; Char, Kookheon; Yoon, Euijoon

2013-01-01

Light-emitting diodes (LEDs) become an attractive alternative to conventional light sources due to high efficiency and long lifetime. However, different material properties between GaN and sapphire cause several problems such as high defect density in GaN, serious wafer bowing, particularly in large-area wafers, and poor light extraction of GaN-based LEDs. Here, we suggest a new growth strategy for high efficiency LEDs by incorporating silica hollow nanospheres (S-HNS). In this strategy, S-HNSs were introduced as a monolayer on a sapphire substrate and the subsequent growth of GaN by metalorganic chemical vapor deposition results in improved crystal quality due to nano-scale lateral epitaxial overgrowth. Moreover, well-defined voids embedded at the GaN/sapphire interface help scatter lights effectively for improved light extraction, and reduce wafer bowing due to partial alleviation of compressive stress in GaN. The incorporation of S-HNS into LEDs is thus quite advantageous in achieving high efficiency LEDs for solid-state lighting. PMID:24220259

Plasmonic Nanostructures for Nano-Scale Bio-Sensing

PubMed Central

Chung, Taerin; Lee, Seung-Yeol; Song, Eui Young; Chun, Honggu; Lee, Byoungho

2011-01-01

The optical properties of various nanostructures have been widely adopted for biological detection, from DNA sequencing to nano-scale single molecule biological function measurements. In particular, by employing localized surface plasmon resonance (LSPR), we can expect distinguished sensing performance with high sensitivity and resolution. This indicates that nano-scale detections can be realized by using the shift of resonance wavelength of LSPR in response to the refractive index change. In this paper, we overview various plasmonic nanostructures as potential sensing components. The qualitative descriptions of plasmonic nanostructures are supported by the physical phenomena such as plasmonic hybridization and Fano resonance. We present guidelines for designing specific nanostructures with regard to wavelength range and target sensing materials. PMID:22346679

Thermoelectric efficiency of nanoscale devices in the linear regime

NASA Astrophysics Data System (ADS)

Bevilacqua, G.; Grosso, G.; Menichetti, G.; Pastori Parravicini, G.

2016-12-01

We study quantum transport through two-terminal nanoscale devices in contact with two particle reservoirs at different temperatures and chemical potentials. We discuss the general expressions controlling the electric charge current, heat currents, and the efficiency of energy transmutation in steady conditions in the linear regime. With focus in the parameter domain where the electron system acts as a power generator, we elaborate workable expressions for optimal efficiency and thermoelectric parameters of nanoscale devices. The general concepts are set at work in the paradigmatic cases of Lorentzian resonances and antiresonances, and the encompassing Fano transmission function: the treatments are fully analytic, in terms of the trigamma functions and Bernoulli numbers. From the general curves here reported describing transport through the above model transmission functions, useful guidelines for optimal efficiency and thermopower can be inferred for engineering nanoscale devices in energy regions where they show similar transmission functions.

Nanoscale piezoelectric vibration energy harvester design

NASA Astrophysics Data System (ADS)

Foruzande, Hamid Reza; Hajnayeb, Ali; Yaghootian, Amin

2017-09-01

Development of new nanoscale devices has increased the demand for new types of small-scale energy resources such as ambient vibrations energy harvesters. Among the vibration energy harvesters, piezoelectric energy harvesters (PEHs) can be easily miniaturized and fabricated in micro and nano scales. This change in the dimensions of a PEH leads to a change in its governing equations of motion, and consequently, the predicted harvested energy comparing to a macroscale PEH. In this research, effects of small scale dimensions on the nonlinear vibration and harvested voltage of a nanoscale PEH is studied. The PEH is modeled as a cantilever piezoelectric bimorph nanobeam with a tip mass, using the Euler-Bernoulli beam theory in conjunction with Hamilton's principle. A harmonic base excitation is applied as a model of the ambient vibrations. The nonlocal elasticity theory is used to consider the size effects in the developed model. The derived equations of motion are discretized using the assumed-modes method and solved using the method of multiple scales. Sensitivity analysis for the effect of different parameters of the system in addition to size effects is conducted. The results show the significance of nonlocal elasticity theory in the prediction of system dynamic nonlinear behavior. It is also observed that neglecting the size effects results in lower estimates of the PEH vibration amplitudes. The results pave the way for designing new nanoscale sensors in addition to PEHs.

Direct spontaneous growth and interfacial structural properties of inclined GaN nanopillars on r-plane sapphire

DOE Office of Scientific and Technical Information (OSTI.GOV)

Adikimenakis, A.; Aretouli, K. E.; Tsagaraki, K.

2015-06-28

The spontaneous growth of GaN nanopillars (NPs) by direct plasma-assisted molecular beam epitaxy on nitridated r-plane sapphire substrates has been studied. The emanation of metal-polarity NPs from inside an a-plane nonpolar GaN film was found to depend on both the substrate nitridation and the growth conditions. The density of NPs increased with increasing the duration of the nitridation process and the power applied on the radio-frequency plasma source, as well as the III/V flux ratio, while variation of the first two parameters enhanced the roughness of the substrate's surface. Transmission electron microscopy (TEM) techniques were employed to reveal the structuralmore » characteristics of the NPs and their nucleation mechanism from steps on the sapphire surface and/or interfacial semipolar GaN nanocrystals. Lattice strain measurements showed a possible Al enrichment of the first 5–6 monolayers of the NPs. By combining cross-sectional and plan-view TEM observations, the three-dimensional model of the NPs was constructed. The orientation relationship and interfacial accommodation between the NPs and the nonpolar a-plane GaN film were also elucidated. The NPs exhibited strong and narrow excitonic emission, suggesting an excellent structural quality.« less

Ultralow nanoscale wear through atom-by-atom attrition in silicon-containing diamond-like carbon

NASA Astrophysics Data System (ADS)

Bhaskaran, Harish; Gotsmann, Bernd; Sebastian, Abu; Drechsler, Ute; Lantz, Mark A.; Despont, Michel; Jaroenapibal, Papot; Carpick, Robert W.; Chen, Yun; Sridharan, Kumar

2010-03-01

Understanding friction and wear at the nanoscale is important for many applications that involve nanoscale components sliding on a surface, such as nanolithography, nanometrology and nanomanufacturing. Defects, cracks and other phenomena that influence material strength and wear at macroscopic scales are less important at the nanoscale, which is why nanowires can, for example, show higher strengths than bulk samples. The contact area between the materials must also be described differently at the nanoscale. Diamond-like carbon is routinely used as a surface coating in applications that require low friction and wear because it is resistant to wear at the macroscale, but there has been considerable debate about the wear mechanisms of diamond-like carbon at the nanoscale because it is difficult to fabricate diamond-like carbon structures with nanoscale fidelity. Here, we demonstrate the batch fabrication of ultrasharp diamond-like carbon tips that contain significant amounts of silicon on silicon microcantilevers for use in atomic force microscopy. This material is known to possess low friction in humid conditions, and we find that, at the nanoscale, it is three orders of magnitude more wear-resistant than silicon under ambient conditions. A wear rate of one atom per micrometre of sliding on SiO2 is demonstrated. We find that the classical wear law of Archard does not hold at the nanoscale; instead, atom-by-atom attrition dominates the wear mechanisms at these length scales. We estimate that the effective energy barrier for the removal of a single atom is ~1 eV, with an effective activation volume of ~1 × 10-28 m.

A new regime of nanoscale thermal transport: Collective diffusion increases dissipation efficiency

DOE PAGES

Hoogeboom-Pot, Kathleen M.; Hernandez-Charpak, Jorge N.; Gu, Xiaokun; ...

2015-03-23

Understanding thermal transport from nanoscale heat sources is important for a fundamental description of energy flow in materials, as well as for many technological applications including thermal management in nanoelectronics and optoelectronics, thermoelectric devices, nanoenhanced photovoltaics, and nanoparticle-mediated thermal therapies. Thermal transport at the nanoscale is fundamentally different from that at the macroscale and is determined by the distribution of carrier mean free paths and energy dispersion in a material, the length scales of the heat sources, and the distance over which heat is transported. Past work has shown that Fourier’s law for heat conduction dramatically overpredicts the rate ofmore » heat dissipation from heat sources with dimensions smaller than the mean free path of the dominant heat-carrying phonons. In this work, we uncover a new regime of nanoscale thermal transport that dominates when the separation between nanoscale heat sources is small compared with the dominant phonon mean free paths. Surprisingly, the interaction of phonons originating from neighboring heat sources enables more efficient diffusive-like heat dissipation, even from nanoscale heat sources much smaller than the dominant phonon mean free paths. This finding suggests that thermal management in nanoscale systems including integrated circuits might not be as challenging as previously projected. In conclusion, we demonstrate a unique capability to extract differential conductivity as a function of phonon mean free path in materials, allowing the first (to our knowledge) experimental validation of predictions from the recently developed first-principles calculations.« less

A new regime of nanoscale thermal transport: Collective diffusion increases dissipation efficiency

NASA Astrophysics Data System (ADS)

Hoogeboom-Pot, Kathleen M.; Hernandez-Charpak, Jorge N.; Gu, Xiaokun; Frazer, Travis D.; Anderson, Erik H.; Chao, Weilun; Falcone, Roger W.; Yang, Ronggui; Murnane, Margaret M.; Kapteyn, Henry C.; Nardi, Damiano

2015-04-01

Understanding thermal transport from nanoscale heat sources is important for a fundamental description of energy flow in materials, as well as for many technological applications including thermal management in nanoelectronics and optoelectronics, thermoelectric devices, nanoenhanced photovoltaics, and nanoparticle-mediated thermal therapies. Thermal transport at the nanoscale is fundamentally different from that at the macroscale and is determined by the distribution of carrier mean free paths and energy dispersion in a material, the length scales of the heat sources, and the distance over which heat is transported. Past work has shown that Fourier's law for heat conduction dramatically overpredicts the rate of heat dissipation from heat sources with dimensions smaller than the mean free path of the dominant heat-carrying phonons. In this work, we uncover a new regime of nanoscale thermal transport that dominates when the separation between nanoscale heat sources is small compared with the dominant phonon mean free paths. Surprisingly, the interaction of phonons originating from neighboring heat sources enables more efficient diffusive-like heat dissipation, even from nanoscale heat sources much smaller than the dominant phonon mean free paths. This finding suggests that thermal management in nanoscale systems including integrated circuits might not be as challenging as previously projected. Finally, we demonstrate a unique capability to extract differential conductivity as a function of phonon mean free path in materials, allowing the first (to our knowledge) experimental validation of predictions from the recently developed first-principles calculations.

Oxygen content modulation by nanoscale chemical and electrical patterning in epitaxial SrCoO3-δ (0 < δ ≤ 0.5) thin films

NASA Astrophysics Data System (ADS)

Hu, S.; Seidel, J.

2016-08-01

Fast controllable redox reactions in solid materials at room temperature are a promising strategy for enhancing the overall performance and lifetime of many energy technology materials and devices. Easy control of oxygen content is a key concept for the realisation of fast catalysis and bulk diffusion at room temperature. Here, high quality epitaxial brownmillerite SrCoO2.5 thin films have been oxidised to perovskite (P) SrCoO3 with NaClO. X-ray diffraction, scanning probe microscopy and x-ray photoelectron spectroscopy measurements were performed to investigate the structural and electronic changes of the material. The oxidised thin films were found to exhibit distinct morphological changes from an atomically flat terrace structure to forming small nanosized islands with boundaries preferentially in [100] or [010] directions all over the surface, relaxing the in-plane strain imposed by the substrate. The conductivity, or oxygen content, of each single island is confined by these textures, which can be locally patterned even further with electric poling. The high charging level at the island boundaries indicates a magnified electric capacity of SCO thin films, which could be exploited in future device geometries. This finding represents a new way of oxygen modulation with associated self-assembled charge confinement to nanoscale boundaries, offering interesting prospects in nanotechnology applications.

Current nanoscience and nanoengineering at the Center for Nanoscale Science and Engineering

NASA Astrophysics Data System (ADS)

Hermann, A. M.; Singh, R. S.; Singh, V. P.

2006-07-01

The Center for Nanoscale Science and Engineering (CeNSE) at the University of Kentucky is a multidisciplinary group of faculty, students, and staff, with a shared vision and cutting-edge research facilities to study and develop materials and devices at the nanoscale. Current research projects at CeNSE span a number of diverse nanoscience thrusts in bio- engineering and medicine (nanosensors and nanoelectrodes, nanoparticle-based drug delivery), electronics (nanolithography, molecular electronics, nanotube FETs), nanotemplates for electronics and gas sensors (functionalization of carbon nanotubes, aligned carbon nanotube structures for gate-keeping, e-beam lithography with nanoscale precision), and nano--optoelectronics (nanoscale photonics for laser communications, quantum confinement in photovoltaic devices, and nanostructured displays). This paper provides glimpses of this research and future directions.

76 FR 41178 - Pesticides; Policies Concerning Products Containing Nanoscale Materials; Opportunity for Public...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-07-13

... 17, 2011, concerning possible approaches for obtaining information about what nanoscale materials are... information about what nanoscale materials are present in registered pesticide products. Four requests for a...

Voltage control of nanoscale magnetoelastic elements: theory and experiments (Presentation Recording)

NASA Astrophysics Data System (ADS)

Carman, Gregory P.

2015-09-01

Electromagnetic devices rely on electrical currents to generate magnetic fields. While extremely useful this approach has limitations in the small-scale. To overcome the scaling problem, researchers have tried to use electric fields to manipulate a magnetic material's intrinsic magnetization (i.e. multiferroic). The strain mediated class of multiferroics offers up to 70% of energy transduction using available piezoelectric and magnetoelastic materials. While strain mediated multiferroic is promising, few studies exist on modeling/testing of nanoscale magnetic structures. This talk presents motivation, analytical models, and experimental data on electrical control of nanoscale single magnetic domain structures. This research is conducted in a NSF Engineering Research Center entitled Translational Applications for Nanoscale Multiferroics TANMS. The models combine micromagnetics (Landau-Lifshitz-Gilbert) with elastodynamics using the electrostatic approximation producing eight fully coupled nonlinear partial differential equations. Qualitative and quantitative verification is achieved with direct comparison to experimental data. The modeling effort guides fabrication and testing on three elements, i.e. nanoscale rings (onion states), ellipses (single domain reorientation), and superparamagnetic elements. Experimental results demonstrate electrical and deterministic control of the magnetic states in the 5-500 nm structures as measured with Photoemission Electron Microscopy PEEM, Magnetic Force Microscopy MFM, or Lorentz Transmission Electron Microscopy TEM. These data strongly suggests efficient control of nanoscale magnetic spin states is possible with voltage.

Nanoscale characterization of 1D Sn-3.5Ag nanosolders and their application into nanowelding at the nanoscale

NASA Astrophysics Data System (ADS)

Zhang, Hong; Zhang, Junwei; Lan, Qianqian; Ma, Hongbin; Qu, Ke; Inkson, Beverley J.; Mellors, Nigel J.; Xue, Desheng; Peng, Yong

2014-10-01

One-dimensional Sn-3.5Ag alloy nanosolders have been successfully fabricated by a dc electrodeposition technique into nanoporous templates, and their soldering quality has been demonstrated in nanoscale electrical welding for the first time, which indicates that they can easily form remarkably reliable conductive joints. The electrical measurement shows that individual 1D Sn-3.5Ag nanosolders have a resistivity of 28.9 μΩ·cm. The morphology, crystal structure and chemistry of these nanosolders have been characterized at the nanoscale. It is found that individual 1D Sn-3.5Ag alloy nanosolders have a continuous morphology and smooth surface. XPS confirms the presence of tin and silver with a mass ratio of 96.54:3.46, and EDX elemental mappings clearly reveal that the Sn and Ag elements have a uniform distribution. Coveragent beam electron diffractions verify that the crystal phases of individual 1D Sn-3.5Ag alloy nanosolders consist of matrix β-Sn and the intermetallic compound Ag3Sn. The reflow experiments reveal that the eutectic composition of the 1D Sn-Ag alloy nanowire is shifted to the Sn rich corner. This work may contribute one of the most important tin-based alloy nanosolders for future nanoscale welding techniques, which are believed to have broad applications in nanotechnology and the future nano-industry.

Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVD

NASA Astrophysics Data System (ADS)

Takeuchi, M.; Shimizu, H.; Kajitani, R.; Kawasaki, K.; Kumagai, Y.; Koukitu, A.; Aoyagi, Y.

2007-01-01

The growth of N-polar AlN layers on c-plane sapphire is reported. Low-temperature AlN (LT-AlN) layers were used as seeding buffer layers with pre-nitridation for sapphire. To avoid strong vapor-phase reaction between trimethylaluminum (TMA) and ammonia (NH 3) and to improve the crystalline quality, low-pressure flow-modulated (FM) metal-organic chemical vapor deposition (MOCVD) technique was introduced with careful optimization of the FM sequence. The surface morphologies and the crystalline quality defined by the X-ray diffraction (XRD) (0 0 2) and (1 0 0) rocking curve measurements strongly depended on the LT-AlN thickness and on the TMA coverage per cycle of the FM growth. The sample showing the best XRD data with a good morphology was almost completely etched in aqueous KOH solution owing to N-polarity. From the plan-view transmission electron microscopy (TEM) observation, the dislocation density was counted to be about 3×10 10 cm -2.