Nanoscale Reactive Ion Etching of Silicon Nitride Thin Films for Embedded Nanomagnetic Device Fabrication

NASA Astrophysics Data System (ADS)

Hibbard-Lubow, David Luke

The demands of digital memory have increased exponentially in recent history, requiring faster, smaller and more accurate storage methods. Two promising solutions to this ever-present problem are Bit Patterned Media (BPM) and Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM). Producing these technologies requires difficult and expensive fabrication techniques. Thus, the production processes must be optimized to allow these storage methods to compete commercially while continuing to increase their information storage density and reliability. I developed a process for the production of nanomagnetic devices (which can take the form of several types of digital memory) embedded in thin silicon nitride films. My focus was on optimizing the reactive ion etching recipe required to embed the device in the film. Ultimately, I found that recipe 37 (Power: 250W, CF4 nominal/actual flow rate: 25/25.4 sccm, O2 nominal/actual flow rate: 3.1/5.2 sccm, which gave a maximum pressure around 400 mTorr) gave the most repeatable and anisotropic results. I successfully used processes described in this thesis to make embedded nanomagnets, which could be used as bit patterned media. Another promising application of this work is to make embedded magnetic tunneling junctions, which are the storage medium used in MRAM. Doing so will require still some tweaks to the fabrication methods. Techniques for making these changes and their potential effects are discussed.

PECVD silicon-rich nitride and low stress nitride films mechanical characterization using membrane point load deflection

NASA Astrophysics Data System (ADS)

Bagolini, Alvise; Picciotto, Antonino; Crivellari, Michele; Conci, Paolo; Bellutti, Pierluigi

2016-02-01

An analysis of the mechanical properties of plasma enhanced chemical vapor (PECVD) silicon nitrides is presented, using micro fabricated silicon nitride membranes under point load deflection. The membranes are made of PECVD silicon-rich nitride and low stress nitride films. The mechanical performance of the bended membranes is examined both with analytical models and finite element simulation in order to extract the elastic modulus and residual stress values. The elastic modulus of low stress silicon nitride is calculated using stress free analytical models, while for silicon-rich silicon nitride and annealed low stress silicon nitride it is estimated with a pre-stressed model of point-load deflection. The effect of annealing both in nitrogen and hydrogen atmosphere is evaluated in terms of residual stress, refractive index and thickness variation. It is demonstrated that a hydrogen rich annealing atmosphere induces very little change in low stress silicon nitride. Nitrogen annealing effects are measured and shown to be much higher in silicon-rich nitride than in low stress silicon nitride. An estimate of PECVD silicon-rich nitride elastic modulus is obtained in the range between 240-320 GPa for deposited samples and 390 GPa for samples annealed in nitrogen atmosphere. PECVD low stress silicon nitride elastic modulus is estimated to be 88 GPa as deposited and 320 GPa after nitrogen annealing.

Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient

NASA Technical Reports Server (NTRS)

Cohen, R. A.; Wheeler, R. K. (Inventor)

1974-01-01

A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide. First, pure oxygen is allowed to flow through the tube to initially coat the inside surface of the tube with a thin layer of silicon dioxide. After the tube is coated with the thin layer of silicon dioxide, the silicon is oxidized thermally in a normal fashion. If the tube becomes contaminated, the silicon dioxide is etched off thereby exposing clean silicon nitride and then the inside of the tube is recoated with silicon dioxide. As is disclosed, the silicon nitride tube can also be used as the ambient for the pyrolytic decomposition of silane and ammonia to form thin layers of clean silicon nitride.

Stability and rheology of dispersions of silicon nitride and silicon carbide

NASA Technical Reports Server (NTRS)

Feke, Donald L.

1987-01-01

The relationship between the surface and colloid chemistry of commercial ultra-fine silicon carbide and silicon nitride powders was examined by a variety of standard characterization techniques and by methodologies especially developed for ceramic dispersions. These include electrokinetic measurement, surface titration, and surface spectroscopies. The effects of powder pretreatment and modification strategies, which can be utilized to augment control of processing characteristics, were monitored with these technologies. Both silicon carbide and nitride were found to exhibit silica-like surface chemistries, but silicon nitride powders possess an additional amine surface functionality. Colloidal characteristics of the various nitride powders in aqueous suspension is believed to be highly dependent on the relative amounts of the two types of surface groups, which in turn is determined by the powder synthesis route. The differences in the apparent colloidal characteristics for silicon nitride powders cannot be attributed to the specific absorption of ammonium ions. Development of a model for the prediction of double-layer characteristics of materials with a hybrid site interface facilitated understanding and prediction of the behavior of both surface charge and surface potential for these materials. The utility of the model in application to silicon nitride powders was demonstrated.

Back scattering involving embedded silicon nitride (SiN) nanoparticles for c-Si solar cells

NASA Astrophysics Data System (ADS)

Ghosh, Hemanta; Mitra, Suchismita; Siddiqui, M. S.; Saxena, A. K.; Chaudhuri, Partha; Saha, Hiranmay; Banerjee, Chandan

2018-04-01

A novel material, structure and method of synthesis for dielectric light trapping have been presented in this paper. First, the light scattering behaviour of silicon nitride nanoparticles have been theoretically studied in order to find the optimized size for dielectric back scattering by FDTD simulations from Lumerical Inc. The optical results have been used in electrical analysis and thereby, estimate the effect of nanoparticles on efficiency of the solar cells depending on substrate thickness. Experimentally, silicon nitride (SiN) nanoparticles have been formed using hydrogen plasma treatment on SiN layer deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD). The size and area coverage of the nanoparticles were controlled by varying the working pressure, power density and treatment duration. The nanoparticles were integrated with partial rear contact c-Si solar cells as dielectric back reflector structures for the light trapping in thin silicon solar cells. Experimental results revealed the increases of current density by 2.7% in presence of SiN nanoparticles.

Composite Reinforcement using Boron Nitride Nanotubes

DTIC Science & Technology

2014-05-09

while retaining the nanotube structure. This project involves the use of computational quantum chemistry to study interactions of aluminium (Al...small clusters of 1–4 metal atoms. The effect of varying the radius of the nanotubes and the size of aluminium and titanium clusters was considered...15. SUBJECT TERMS Boron Nitride Nanotubes, composite materials, Aluminum Alloys , Titanium Alloy , Theoretical Chemistry 16. SECURITY

Molecular dynamics simulation of salt rejection through silicon carbide nanotubes as a nanostructure membrane.

PubMed

Khataee, Alireza; Bayat, Golchehreh; Azamat, Jafar

2017-01-01

Salt rejection phenomenon was investigated using armchair silicon carbide (SiC) nanotubes under applied electric fields. The systems included the (7,7) and (8,8) SiC nanotubes surrounded by silicon nitride membrane immersed in a 0.4mol/L aqueous solution of sodium chloride. Results of molecular dynamics (MD) simulations for selective separation of Na + and Cl - ions showed that the (7,7) SiC nanotube is suitable for separation of cations and the (8,8) SiC nanotube can be used for separating anions. The water desalination by SiC nanotubes was demonstrated by potential of mean force for Na + and Cl - ions in each SiC nanotube. Furthermore, the ionic current, ion residence time, and the radial distribution functions of species were measured to evaluate the properties of the system. Based on the results of this research, the studied SiC nanotubes can be recommended as a nanostructure model for water desalination. Copyright © 2016 Elsevier Inc. All rights reserved.

Feasibility study of silicon nitride regenerators

NASA Technical Reports Server (NTRS)

Fucinari, C. A.; Rao, V. D. N.

1979-01-01

The feasibility of silicon nitride as a regenerator matrix material for applications requiring inlet temperatures above 1000 C is examined. The present generation oxide ceramics are used as a reference to examine silicon nitride from a material characteristics, manufacturing, thermal stress and aerothermodynamic viewpoint.

Environmental Electrometry with Luminescent Carbon Nanotubes.

PubMed

Noé, Jonathan C; Nutz, Manuel; Reschauer, Jonathan; Morell, Nicolas; Tsioutsios, Ioannis; Reserbat-Plantey, Antoine; Watanabe, Kenji; Taniguchi, Takashi; Bachtold, Adrian; Högele, Alexander

2018-06-25

We demonstrate that localized excitons in luminescent carbon nanotubes can be utilized to study electrostatic fluctuations in the nanotube environment with sensitivity down to the elementary charge. By monitoring the temporal evolution of the cryogenic photoluminescence from individual carbon nanotubes grown on silicon oxide and hexagonal boron nitride, we characterize the dynamics of charge trap defects for both dielectric supports. We find a one order of magnitude reduction in the photoluminescence spectral wandering for nanotubes on extended atomically flat terraces of hexagonal boron nitride. For nanotubes on hexagonal boron nitride with pronounced spectral fluctuations, our analysis suggests proximity to terrace ridges where charge fluctuators agglomerate to exhibit areal densities exceeding those of silicon oxide. Our results establish carbon nanotubes as sensitive probes of environmental charge fluctuations and highlight their potential for applications in electrometric nanodevices with all-optical readout.

Apparatus for the production of boron nitride nanotubes

DOEpatents

Smith, Michael W; Jordan, Kevin

2014-06-17

An apparatus for the large scale production of boron nitride nanotubes comprising; a pressure chamber containing; a continuously fed boron containing target; a source of thermal energy preferably a focused laser beam; a cooled condenser; a source of pressurized nitrogen gas; and a mechanism for extracting boron nitride nanotubes that are condensed on or in the area of the cooled condenser from the pressure chamber.

Amorphous Carbon-Boron Nitride Nanotube Hybrids

NASA Technical Reports Server (NTRS)

Kim, Jae Woo (Inventor); Siochi, Emilie J. (Inventor); Wise, Kristopher E. (Inventor); Lin, Yi (Inventor); Connell, John (Inventor)

2016-01-01

A method for joining or repairing boron nitride nanotubes (BNNTs). In joining BNNTs, the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures. In repairing BNNTs, the damaged site of the nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation to form well bonded hybrid a-C/BNNT structures at the damage site.

Method of densifying an article formed of reaction bonded silicon nitride

NASA Technical Reports Server (NTRS)

Mangels, John A. (Inventor)

1982-01-01

A method of densifying an article formed of reaction bonded silicon nitride is disclosed. The reaction bonded silicon nitride article is packed in a packing mixture consisting of silicon nitride powder and a densification aid. The reaction bonded silicon nitride article and packing powder are sujected to a positive, low pressure nitrogen gas treatment while being heated to a treatment temperature and for a treatment time to cause any open porosity originally found in the reaction bonded silicon nitride article to be substantially closed. Thereafter, the reaction bonded silicon nitride article and packing powder are subjected to a positive high pressure nitrogen gas treatment while being heated to a treatment temperature and for a treatment time to cause a sintering of the reaction bonded silicon nitride article whereby the strength of the reaction bonded silicon nitride article is increased.

Dissolution of bulk specimens of silicon nitride

NASA Technical Reports Server (NTRS)

Davis, W. F.; Merkle, E. J.

1981-01-01

An accurate chemical characterization of silicon nitride has become important in connection with current efforts to incorporate components of this material into advanced heat engines. However, there are problems concerning a chemical analysis of bulk silicon nitride. Current analytical methods require the pulverization of bulk specimens. A pulverization procedure making use of grinding media, on the other hand, will introduce contaminants. A description is given of a dissolution procedure which overcomes these difficulties. It has been found that up to at least 0.6 g solid pieces of various samples of hot pressed and reaction bonded silicon nitride can be decomposed in a mixture of 3 mL hydrofluoric acid and 1 mL nitric acid overnight at 150 C in a Parr bomb. High-purity silicon nitride is completely soluble in nitric acid after treatment in the bomb. Following decomposition, silicon and hydrofluoric acid are volatilized and insoluble fluorides are converted to a soluble form.

Colloidal characterization of silicon nitride and silicon carbide

NASA Technical Reports Server (NTRS)

Feke, Donald L.

1986-01-01

The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

Radio Frequency Plasma Synthesis of Boron Nitride Nanotubes (BNNTs) for Structural Applications: Part I

NASA Technical Reports Server (NTRS)

Hales, Stephen J.; Alexa, Joel A.; Jensen, Brian J.; Thomsen, Donald L.

2016-01-01

It is evident that nanotubes, such as carbon, boron nitride and even silicon, offer great potential for many aerospace applications. The opportunity exists to harness the extremely high strength and stiffness exhibited by high-purity, low-defect nanotubes in structural materials. Even though the technology associated with carbon nanotube (CNT) development is mature, the mechanical property benefits have yet to be fully realized. Boron nitride nanotubes (BNNTs) offer similar structural benefits, but exhibit superior chemical and thermal stability. A broader range of potential structural applications results, particularly as reinforcing agents for metal- and ceramic- based composites. However, synthesis of BNNTs is more challenging than CNTs mainly because of the higher processing temperatures required, and mass production techniques have yet to emerge. A promising technique is radio frequency plasma spray (RFPS), which is an inductively coupled, very high temperature process. The lack of electrodes and the self- contained, inert gas environment lend themselves to an ultraclean product. It is the aim of this White Paper to survey the state of the art with regard to nano-material production by analyzing the pros and cons of existing methods. The intention is to combine the best concepts and apply the NASA Langley Research Center (LaRC) RFPS facility to reliably synthesize large quantities of consistent, high-purity BNNTs.

Boron Nitride Nanotubes-Reinforced Glass Composites

NASA Technical Reports Server (NTRS)

Bansal, Narottam; Hurst, Janet B.; Choi, Sung R.

2005-01-01

Boron nitride nanotubes of significant lengths were synthesized by reaction of boron with nitrogen. Barium calcium aluminosilicate glass composites reinforced with 4 weight percent of BN nanotubes were fabricated by hot pressing. Ambient-temperature flexure strength and fracture toughness of the glass-BN nanotube composites were determined. The strength and fracture toughness of the composite were higher by as much as 90 and 35 percent, respectively, than those of the unreinforced glass. Microscopic examination of the composite fracture surfaces showed pullout of the BN nanotubes. The preliminary results on the processing and improvement in mechanical properties of BN nanotube reinforced glass matrix composites are being reported here for the first time.

Silicon Nitride Equation of State

NASA Astrophysics Data System (ADS)

Swaminathan, Pazhayannur; Brown, Robert

2015-06-01

This report presents the development a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4) . Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonalβ-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products and then combined with the single component solid models to study the global phase diagram. Sponsored by the NASA Goddard Space Flight Center Living With a Star program office.

Infrared bolometers with silicon nitride micromesh absorbers

NASA Technical Reports Server (NTRS)

Bock, J. J.; Turner, A. D.; DelCastillo, H. M.; Beeman, J. W.; Lange, A. E.; Mauskopf, P. D.

1996-01-01

Sensitive far infrared and millimeter wave bolometers fabricated from a freestanding membrane of low stress silicon nitride are reported. The absorber, consisting of a metallized silicon nitride micromesh thermally isolated by radial legs of silicon nitride, is placed in an integrating cavity to efficiently couple to single mode or multiple mode infrared radiation. This structure provides low heat capacity, low thermal conduction and minimal cross section to energetic particles. A neutron transmutation doped Ge thermister is bump bonded to the center of the device and read out with evaporated Cr-Au leads. The limiting performance of the micromesh absorber is discussed and the recent results obtained from a 300 mK cold stage are summarized.

Efficient Boron Nitride Nanotube Formation via Combined Laser-Gas Flow Levitation

NASA Technical Reports Server (NTRS)

Whitney, R. Roy (Inventor); Jordan, Kevin (Inventor); Smith, Michael W. (Inventor)

2014-01-01

A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B(sub x)C(sub y)N(sub z) The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B(sub x)C(sub y)N(sub z).

Efficient boron nitride nanotube formation via combined laser-gas flow levitation

DOEpatents

Whitney, R. Roy; Jordan, Kevin; Smith, Michael

2014-03-18

A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z.

Silicon nitride ceramic having high fatigue life and high toughness

DOEpatents

Yeckley, Russell L.

1996-01-01

A sintered silicon nitride ceramic comprising between about 0.6 mol % and about 3.2 mol % rare earth as rare earth oxide, and between about 85 w/o and about 95 w/o beta silicon nitride grains, wherein at least about 20% of the beta silicon nitride grains have a thickness of greater than about 1 micron.

The Effect of Polymer Char on Nitridation Kinetics of Silicon

NASA Technical Reports Server (NTRS)

Chan, Rickmond C.; Bhatt, Ramakrishna T.

1994-01-01

Effects of polymer char on nitridation kinetics of attrition milled silicon powder have been investigated from 1200 to 1350 C. Results indicate that at and above 1250 C, the silicon compacts containing 3.5 wt percent polymer char were fully converted to Si3N4 after 24 hr exposure in nitrogen. In contrast, the silicon compacts without polymer char could not be fully converted to Si3N4 at 1350 C under similar exposure conditions. At 1250 and 1350 C, the silicon compacts with polymer char showed faster nitridation kinetics than those without the polymer char. As the polymer char content is increased, the amount of SiC in the nitrided material is also increased. By adding small amounts (approx. 2.5 wt percent) of NiO, the silicon compacts containing polymer char can be completely nitrided at 1200 C. The probable mechanism for the accelerated nitridation of silicon containing polymer char is discussed.

Comparison of the surface charge behavior of commercial silicon nitride and silicon carbide powders

NASA Technical Reports Server (NTRS)

Whitman, Pamela K.; Feke, Donald L.

1988-01-01

The adsorption and desorption of protons from aqueous solution onto the surfaces of a variety of commercial silicon carbide and silicon nitride powders has been examined using a surface titration methodology. This method provides information on some colloidal characteristics, such as the point of zero charge (pzc) and the variation of proton adsorption with dispersion pH, useful for the prediction of optimal ceramic-processing conditions. Qualitatively, the magnitude of the proton adsorption from solution reveals small differences among all of the materials studied. However, the results show that the pzc for the various silicon nitride powders is affected by the powder synthesis route. Complementary investigations have shown that milling can also act to shift the pzc exhibited by silicon nitride powder. Also, studies of the role of the electrolyte in the development of surface charge have indicated no evidence of specific adsorption of ammonium ion on either silicon nitride or silicon carbide powders.

Rolling-element fatigue life of silicon nitride balls: Preliminary test results

NASA Technical Reports Server (NTRS)

Parker, R. J.; Zaretsky, E. V.

1972-01-01

Hot pressed silicon nitride was evaluated as a rolling element bearing material. The five-ball fatigue tester was used to test 12.7 mm (0.500 in.) diameter balls at a maximum Hertz stress of 800,000 psi at a race temperature of 130 F. The fatigue spalls in the silicon nitride resembled those in typical bearing steels. The ten-percent fatigue life of the silicon nitride balls was approximately one-eighth to one-fifth that of typical bearing steels (52100 and M-50). The load capacity of the silicon nitride was approximately one-third that of typical bearing steels. The load capacity of the silicon nitride was significantly higher than previously tested ceramic materials for rolling element bearings.

Second-harmonic generation in substoichiometric silicon nitride layers

NASA Astrophysics Data System (ADS)

Pecora, Emanuele; Capretti, Antonio; Miano, Giovanni; Dal Negro, Luca

2013-03-01

Harmonic generation in optical circuits offers the possibility to integrate wavelength converters, light amplifiers, lasers, and multiple optical signal processing devices with electronic components. Bulk silicon has a negligible second-order nonlinear optical susceptibility owing to its crystal centrosymmetry. Silicon nitride has its place in the microelectronic industry as an insulator and chemical barrier. In this work, we propose to take advantage of silicon excess in silicon nitride to increase the Second Harmonic Generation (SHG) efficiency. Thin films have been grown by reactive magnetron sputtering and their nonlinear optical properties have been studied by femtosecond pumping over a wide range of excitation wavelengths, silicon nitride stoichiometry and thermal processes. We demonstrate SHG in the visible range (375 - 450 nm) using a tunable 150 fs Ti:sapphire laser, and we optimize the SH emission at a silicon excess of 46 at.% demonstrating a maximum SHG efficiency of 4x10-6 in optimized films. Polarization properties, generation efficiency, and the second order nonlinear optical susceptibility are measured for all the investigated samples and discussed in terms of an effective theoretical model. Our findings show that the large nonlinear optical response demonstrated in optimized Si-rich silicon nitride materials can be utilized for the engineering of nonlinear optical functions and devices on a Si chip.

The elevated temperature mechanical properties of silicon nitride/boron nitride fibrous monoliths

NASA Astrophysics Data System (ADS)

Trice, Rodney Wayne

A unique, all-ceramic material capable of non-brittle fracture via crack deflection has been characterized from 25sp°C through 1400sp°C. This material, called fibrous monoliths (FMs), was comprised of unidirectionally aligned 250 mum diameter cells of silicon nitride surrounded by 10 mum thick cell boundaries of boron nitride. Six weight percent yttria and two weight percent alumina were added to the silicon nitride to aid in densification. TEM experiments revealed that the sintering aids used to densify the silicon nitride cells were migrating into the boron nitride cell boundary during hot-pressing and that a fine network of micro-cracks existed between basal planes of boron nitride. Elevated temperature four point bending tests were performed on fibrous monolith ceramics from room temperature through 1400sp°C. Peak strengths of FMs averaged 510 MPa for specimens tested at room temperature through 176 MPa at 1400sp°C. Work of fractures ranged from 7300 J/msp2 to 3200 J/msp2 under the same temperature conditions. The interfacial fracture energy of boron nitride, GammasbBN, as a function of temperature has been determined using the Charalambides method. The fracture energy of boron nitride is approximately 40 J/msp2 and remained constant from 25sp°C through 950sp°C. A sharp increase in GammasbBN, to about 60 J/msp2, was observed at 1000sp°C-1050sp°C. This increase in GammasbBN was attributed to interactions of the crack tip with the cell boundary glassy phase. Subsequent measurements at 1075sp°C indicated a marked decrease in GammasbBN to near 40 J/msp2 before plateauing at 17-20 J/msp2 in the 1200sp°C-1300sp°C regime. The Mode I fracture toughness of silicon nitride was also determined using the single edge precracked beam method as a function of temperature. The He and Hutchinson model relating crack deflection at an interface to the Dundurs' parameter was applied to the current data set using the temperature dependent fracture energies of the boron

Silicon nitride equation of state

NASA Astrophysics Data System (ADS)

Brown, Robert C.; Swaminathan, Pazhayannur K.

2017-01-01

This report presents the development of a global, multi-phase equation of state (EOS) for the ceramic silicon nitride (Si3N4).1 Structural forms include amorphous silicon nitride normally used as a thin film and three crystalline polymorphs. Crystalline phases include hexagonal α-Si3N4, hexagonal β-Si3N4, and the cubic spinel c-Si3N4. Decomposition at about 1900 °C results in a liquid silicon phase and gas phase products such as molecular nitrogen, atomic nitrogen, and atomic silicon. The silicon nitride EOS was developed using EOSPro which is a new and extended version of the PANDA II code. Both codes are valuable tools and have been used successfully for a variety of material classes. Both PANDA II and EOSPro can generate a tabular EOS that can be used in conjunction with hydrocodes. The paper describes the development efforts for the component solid phases and presents results obtained using the EOSPro phase transition model to investigate the solid-solid phase transitions in relation to the available shock data that have indicated a complex and slow time dependent phase change to the c-Si3N4 phase. Furthermore, the EOSPro mixture model is used to develop a model for the decomposition products; however, the need for a kinetic approach is suggested to combine with the single component solid models to simulate and further investigate the global phase coexistences.

Process for producing amorphous and crystalline silicon nitride

DOEpatents

Morgan, P.E.D.; Pugar, E.A.

1985-11-12

A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of whiskers'' or needles is heated at temperature ranging from about 900 C to about 1,200 C to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900 C. 6 figs.

Process for producing amorphous and crystalline silicon nitride

DOEpatents

Morgan, Peter E. D.; Pugar, Eloise A.

1985-01-01

A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of "whiskers" or needles is heated at temperature ranging from about 900.degree. C. to about 1200.degree. C. to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900.degree. C.

Observation of a photoinduced, resonant tunneling effect in a carbon nanotube-silicon heterojunction.

PubMed

Aramo, Carla; Ambrosio, Antonio; Ambrosio, Michelangelo; Boscardin, Maurizio; Castrucci, Paola; Crivellari, Michele; Cilmo, Marco; De Crescenzi, Maurizio; De Nicola, Francesco; Fiandrini, Emanuele; Grossi, Valentina; Maddalena, Pasqualino; Passacantando, Maurizio; Santucci, Sandro; Scarselli, Manuela; Valentini, Antonio

2015-01-01

A significant resonant tunneling effect has been observed under the 2.4 V junction threshold in a large area, carbon nanotube-silicon (CNT-Si) heterojunction obtained by growing a continuous layer of multiwall carbon nanotubes on an n-doped silicon substrate. The multiwall carbon nanostructures were grown by a chemical vapor deposition (CVD) technique on a 60 nm thick, silicon nitride layer, deposited on an n-type Si substrate. The heterojunction characteristics were intensively studied on different substrates, resulting in high photoresponsivity with a large reverse photocurrent plateau. In this paper, we report on the photoresponsivity characteristics of the device, the heterojunction threshold and the tunnel-like effect observed as a function of applied voltage and excitation wavelength. The experiments are performed in the near-ultraviolet to near-infrared wavelength range. The high conversion efficiency of light radiation into photoelectrons observed with the presented layout allows the device to be used as a large area photodetector with very low, intrinsic dark current and noise.

Silicon nitride protective coatings for silvered glass mirrors

DOEpatents

Tracy, C. Edwin; Benson, David K.

1988-01-01

A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate before metal deposition to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

Silicon nitride protective coatings for silvered glass mirrors

DOEpatents

Tracy, C.E.; Benson, D.K.

1984-07-20

A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate prior to metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

Silicon-nitride and metal composite

DOEpatents

Landingham, Richard L.; Huffsmith, Sarah A.

1981-01-01

A composite and a method for bonding the composite. The composite includes a ceramic portion of silicon nitride, a refractory metal portion and a layer of MoSi.sub.2 indirectly bonding the composite together. The method includes contacting the layer of MoSi.sub.2 with a surface of the silicon nitride and with a surface of the metal; heating the layer to a temperature below 1400.degree. C.; and, simultaneously with the heating, compressing the layer such that the contacting is with a pressure of at least 30 MPa. This composite overcomes useful life problems in the fabrication of parts for a helical expander for use in power generation.

Silicon-nitride and metal composite

DOEpatents

Landingham, R.L.; Huffsmith, S.A.

A composite and a method for bonding the composite are described. The composite includes a ceramic portion of silicon nitride, a refractory metal portion and a layer of MoSi/sub 2/ indirectly bonding the composite together. The method includes contacting the layer of MoSi/sub 2/ with a surface of the silicon nitride and with a surface of the metal; heating the layer to a temperature below 1400/sup 0/C; and, simultaneously, compressing the layer such that the contacting is with a pressure of at least 30 MPa. This composite overcomes useful life problems in the fabrication of parts for a helical expander for use in power generation.

Use of Functionalized Carbon Nanotubes for Covalent Attachment of Nanotubes to Silicon

NASA Technical Reports Server (NTRS)

Tour, James M.; Dyke, Christopher A.; Maya, Francisco; Stewart, Michael P.; Chen, Bo; Flatt, Austen K.

2012-01-01

The purpose of the invention is to covalently attach functionalized carbon nanotubes to silicon. This step allows for the introduction of carbon nanotubes onto all manner of silicon surfaces, and thereby introduction of carbon nano - tubes covalently into silicon-based devices, onto silicon particles, and onto silicon surfaces. Single-walled carbon nanotubes (SWNTs) dispersed as individuals in surfactant were functionalized. The nano - tube was first treated with 4-t-butylbenzenediazonium tetrafluoroborate to give increased solubility to the carbon nanotube; the second group attached to the sidewall of the nanotube has a silyl-protected terminal alkyne that is de-protected in situ. This gives a soluble carbon nanotube that has functional groups appended to the sidewall that can be attached covalently to silicon. This reaction was monitored by UV/vis/NJR to assure direct covalent functionalization.

Sintering silicon nitride

NASA Technical Reports Server (NTRS)

Bansal, Narottam P. (Inventor); Levine, Stanley R. (Inventor); Sanders, William A. (Inventor)

1993-01-01

Oxides having a composition of (Ba(1-x)Sr(x))O-Al2O3-2SiO2 are used as sintering aids for producing an improved silicon nitride ceramic material. The x must be greater than 0 to insure the formation of the stable monoclinic celsian glass phase.

Effect of MoO3 on the synthesis of boron nitride nanotubes over Fe and Ni catalysts.

PubMed

Nithya, Jeghan Shrine Maria; Pandurangan, Arumugam

2012-05-01

Synthesis of boron nitride nanotubes at reduced temperature is important for industrial manufactures. In this study boron nitride nanotubes were synthesized by thermal evaporation method using B/Fe2O3/MoO3 and B/Ni2O3/MoO3 mixtures separately with ammonia as the nitrogen source. The growth of boron nitride nanotubes occurred at 1100 degrees C, which was relatively lower than other metal oxides assisted growth processes requiring higher than 1200 degrees C. MoO3 promoted formation of B2O2 and aided boron nitride nanotubes growth at a reduced temperature. The boron nitride nanotubes with bamboo shaped, nested cone structured and straight tubes like forms were evident from the high resolution transmission electron microscopy. Metallic Fe and Ni, formed during the process, were the catalysts for the growth of boron nitride nanotubes. Their formation was established by X-ray diffraction. FT Raman showed a peak due to B-N vibration of BNNTs close to 1370 cm(-1). Hence MoO3 assisted growth of boron nitride nanotubes is advantageous, as it significantly reduced the synthesis temperature.

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

DOEpatents

Corman, Gregory Scot; Luthra, Krishan Lal

2002-01-01

A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

DOEpatents

Corman, Gregory Scot; Luthra, Krishan Lal

1999-01-01

A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

DOEpatents

Lowden, Richard A.

1994-01-01

A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.

Boron nitride nanotubes and nanosheets.

PubMed

Golberg, Dmitri; Bando, Yoshio; Huang, Yang; Terao, Takeshi; Mitome, Masanori; Tang, Chengchun; Zhi, Chunyi

2010-06-22

Hexagonal boron nitride (h-BN) is a layered material with a graphite-like structure in which planar networks of BN hexagons are regularly stacked. As the structural analogue of a carbon nanotube (CNT), a BN nanotube (BNNT) was first predicted in 1994; since then, it has become one of the most intriguing non-carbon nanotubes. Compared with metallic or semiconducting CNTs, a BNNT is an electrical insulator with a band gap of ca. 5 eV, basically independent of tube geometry. In addition, BNNTs possess a high chemical stability, excellent mechanical properties, and high thermal conductivity. The same advantages are likely applicable to a graphene analogue-a monatomic layer of a hexagonal BN. Such unique properties make BN nanotubes and nanosheets a promising nanomaterial in a variety of potential fields such as optoelectronic nanodevices, functional composites, hydrogen accumulators, electrically insulating substrates perfectly matching the CNT, and graphene lattices. This review gives an introduction to the rich BN nanotube/nanosheet field, including the latest achievements in the synthesis, structural analyses, and property evaluations, and presents the purpose and significance of this direction in the light of the general nanotube/nanosheet developments.

Surface Area, and Oxidation Effects on Nitridation Kinetics of Silicon Powder Compacts

NASA Technical Reports Server (NTRS)

Bhatt, R. T.; Palczer, A. R.

1998-01-01

Commercially available silicon powders were wet-attrition-milled from 2 to 48 hr to achieve surface areas (SA's) ranging from 1.3 to 70 sq m/g. The surface area effects on the nitridation kinetics of silicon powder compacts were determined at 1250 or 1350 C for 4 hr. In addition, the influence of nitridation environment, and preoxidation on nitridation kinetics of a silicon powder of high surface area (approximately equals 63 sq m/g) was investigated. As the surface area increased, so did the percentage nitridation after 4 hr in N2 at 1250 or 1350 C. Silicon powders of high surface area (greater than 40 sq m/g) can be nitrided to greater than 70% at 1250 C in 4 hr. The nitridation kinetics of the high-surface-area powder compacts were significantly delayed by preoxidation treatment. Conversely, the nitridation environment had no significant influence on the nitridation kinetics of the same powder. Impurities present in the starting powder, and those accumulated during attrition milling, appeared to react with the silica layer on the surface of silicon particles to form a molten silicate layer, which provided a path for rapid diffusion of nitrogen and enhanced the nitridation kinetics of high surface area silicon powder.

Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

DOEpatents

Lowden, R.A.

1994-04-05

A process for chemical vapor deposition of crystalline silicon nitride is described which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide. 5 figures.

Anisotropic Nanomechanics of Boron Nitride Nanotubes: Nanostructured "Skin" Effect

NASA Technical Reports Server (NTRS)

Srivastava, Deepak; Menon, Madhu; Cho, KyeongJae

2000-01-01

The stiffness and plasticity of boron nitride nanotubes are investigated using generalized tight-binding molecular dynamics and ab-initio total energy methods. Due to boron-nitride BN bond buckling effects, compressed zigzag BN nanotubes are found to undergo novel anisotropic strain release followed by anisotropic plastic buckling. The strain is preferentially released towards N atoms in the rotated BN bonds. The tubes buckle anisotropically towards only one end when uniaxially compressed from both. A "skin-effect" model of smart nanocomposite materials is proposed which will localize the structural damage towards the 'skin' or surface side of the material.

Method for one-to-one polishing of silicon nitride and silicon oxide

NASA Technical Reports Server (NTRS)

Babu, Suryadevara V. (Inventor); Natarajan, Anita (Inventor)

2009-01-01

The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that modulate the silicon dioxide and silicon nitride removal rates such that they are about the same. In one embodiment of the invention, the additive is lysine or lysine mono hydrochloride in combination with picolinic acid, which is effective at a pH of about 8. In another embodiment of the invention, the additive is arginine in combination with picolinic acid, which is effective at a pH of about 10.

Nitridation of silicon by nitrogen neutral beam

NASA Astrophysics Data System (ADS)

Hara, Yasuhiro; Shimizu, Tomohiro; Shingubara, Shoso

2016-02-01

Silicon nitridation was investigated at room temperature using a nitrogen neutral beam (NB) extracted at acceleration voltages of less than 100 V. X-ray photoelectron spectroscopy (XPS) analysis confirmed the formation of a Si3N4 layer on a Si (1 0 0) substrate when the acceleration voltage was higher than 20 V. The XPS depth profile indicated that nitrogen diffused to a depth of 36 nm for acceleration voltages of 60 V and higher. The thickness of the silicon nitrided layer increased with the acceleration voltages from 20 V to 60 V. Cross-sectional transmission electron microscopy (TEM) analysis indicated a Si3N4 layer thickness of 3.1 nm was obtained at an acceleration voltage of 100 V. Moreover, it was proved that the nitrided silicon layer formed by the nitrogen NB at room temperature was effective as the passivation film in the wet etching process.

Boron Nitride Nanotubes Synthesized by Pressurized Reactive Milling Process

NASA Technical Reports Server (NTRS)

Hurst, Janet B.

2004-01-01

Nanotubes, because of their very high strength, are attractive as reinforcement materials for ceramic matrix composites (CMCs). Recently there has been considerable interest in developing and applying carbon nanotubes for both electronic and structural applications. Although carbon nanotubes can be used to reinforce composites, they oxidize at high temperatures and, therefore, may not be suitable for ceramic composites. Boron nitride, because it has a higher oxidation resistance than carbon, could be a potential reinforcement material for ceramic composites. Although boron nitride nanotubes (BNnT) are known to be structurally similar to carbon nanotubes, they have not undergone the same extensive scrutiny that carbon nanotubes have experienced in recent years. This has been due to the difficulty in synthesizing this material rather than lack of interest in the material. We expect that BNnTs will maintain the high strength of carbon nanotubes while offering superior performance for the high-temperature and/or corrosive applications of interest to NASA. At the NASA Glenn Research of preparing BN-nTs were investigated and compared. These include the arc jet process, the reactive milling process, and chemical vapor deposition. The most successful was a pressurized reactive milling process that synthesizes BN-nTs of reasonable quantities.

Efficient FEM simulation of static and free vibration behavior of single walled boron nitride nanotubes

NASA Astrophysics Data System (ADS)

Giannopoulos, Georgios I.; Kontoni, Denise-Penelope N.; Georgantzinos, Stylianos K.

2016-08-01

This paper describes the static and free vibration behavior of single walled boron nitride nanotubes using a structural mechanics based finite element method. First, depending on the type of nanotube under investigation, its three dimensional nanostructure is developed according to the well-known corresponding positions of boron and nitride atoms as well as boron nitride bonds. Then, appropriate point masses are assigned to the atomic positions of the developed space frame. Next, these point masses are suitably interconnected with two-noded, linear, spring-like, finite elements. In order to simulate effectively the interactions observed between boron and nitride atoms within the nanotube, appropriate potential energy functions are introduced for these finite elements. In this manner, various atomistic models for both armchair and zigzag nanotubes with different aspect ratios are numerically analyzed and their effective elastic modulus as well as their natural frequencies and corresponding mode shapes are obtained. Regarding the free vibration analysis, the computed results reveal bending, breathing and axial modes of vibration depending on the nanotube size and chirality as well as the applied boundary support conditions. The longitudinal stiffness of the boron nitride nanotubes is found also sensitive to their geometric characteristics.

Fatigue life of high-speed ball bearings with silicon nitride balls

NASA Technical Reports Server (NTRS)

Parker, R. J.; Zaretsky, E. V.

1974-01-01

Hot-pressed silicon nitride was evaluated as a rolling-element bearing material. The five-ball fatigue tester was used to test 12.7-mm- diameter silicon nitride balls at maximum Hertz stresses ranging from 4.27 x 10 to the 9th power n/sq m to 6.21 x 10 to the 9th power n/sq m at a race temperature of 328K. The fatigue life of NC-132 hot-pressed silicon nitride was found to be equal to typical bearing steels and much greater than other ceramic or cermet materials at the same stress levels. A digital computer program was used to predict the fatigue life of 120-mm- bore angular-contact ball bearings containing either steel or silicon nitride balls. The analysis indicates that there is no improvement in the lives of bearings of the same geometry operating at DN values from 2 to 4 million where silicon nitride balls are used in place of steel balls.

Infrared Dielectric Properties of Low-stress Silicon Nitride

NASA Technical Reports Server (NTRS)

Cataldo, Giuseppe; Beall, James A.; Cho, Hsiao-Mei; McAndrew, Brendan; Niemack, Michael D.; Wollack, Edward J.

2012-01-01

Silicon nitride thin films play an important role in the realization of sensors, filters, and high-performance circuits. Estimates of the dielectric function in the far- and mid-IR regime are derived from the observed transmittance spectra for a commonly employed low-stress silicon nitride formulation. The experimental, modeling, and numerical methods used to extract the dielectric parameters with an accuracy of approximately 4% are presented.

Development of a statistically proven injection molding method for reaction bonded silicon nitride, sintering reaction bonded silicon nitride, and sintered silicon nitride

NASA Astrophysics Data System (ADS)

Steiner, Matthias

A statistically proven, series injection molding technique for ceramic components was developed for the construction of engines and gas turbines. The flow behavior of silicon injection-molding materials was characterized and improved. Hot-isostatic-pressing reaction bonded silicon nitride (HIPRBSN) was developed. A nondestructive component evaluation method was developed. An injection molding line for HIPRBSN engine components precombustion chamber, flame spreader, and valve guide was developed. This line allows the production of small series for engine tests.

Encapsulation of cisplatin as an anti-cancer drug into boron-nitride and carbon nanotubes: Molecular simulation and free energy calculation.

PubMed

Roosta, Sara; Hashemianzadeh, Seyed Majid; Ketabi, Sepideh

2016-10-01

Encapsulation of cisplatin anticancer drug into the single walled (10, 0) carbon nanotube and (10, 0) boron-nitride nanotube was investigated by quantum mechanical calculations and Monte Carlo Simulation in aqueous solution. Solvation free energies and complexation free energies of the cisplatin@ carbon nanotube and cisplatin@ boron-nitride nanotube complexes was determined as well as radial distribution functions of entitled compounds. Solvation free energies of cisplatin@ carbon nanotube and cisplatin@ boron-nitride nanotube were -4.128kcalmol(-1) and -2457.124kcalmol(-1) respectively. The results showed that cisplatin@ boron-nitride nanotube was more soluble species in water. In addition electrostatic contribution of the interaction of boron- nitride nanotube complex and solvent was -281.937kcalmol(-1) which really more than Van der Waals and so the electrostatic interactions play a distinctive role in the solvation free energies of boron- nitride nanotube compounds. On the other hand electrostatic part of the interaction of carbon nanotube complex and solvent were almost the same as Van der Waals contribution. Complexation free energies were also computed to study the stability of related structures and the free energies were negative (-374.082 and -245.766kcalmol(-1)) which confirmed encapsulation of drug into abovementioned nanotubes. However, boron-nitride nanotubes were more appropriate for encapsulation due to their larger solubility in aqueous solution. Copyright © 2016 Elsevier B.V. All rights reserved.

Effect of oxygen plasma on nanomechanical silicon nitride resonators

NASA Astrophysics Data System (ADS)

Luhmann, Niklas; Jachimowicz, Artur; Schalko, Johannes; Sadeghi, Pedram; Sauer, Markus; Foelske-Schmitz, Annette; Schmid, Silvan

2017-08-01

Precise control of tensile stress and intrinsic damping is crucial for the optimal design of nanomechanical systems for sensor applications and quantum optomechanics in particular. In this letter, we study the influence of oxygen plasma on the tensile stress and intrinsic damping of nanomechanical silicon nitride resonators. Oxygen plasma treatments are common steps in micro and nanofabrication. We show that oxygen plasma for only a few minutes oxidizes the silicon nitride surface, creating several nanometer thick silicon dioxide layers with a compressive stress of 1.30(16) GPa. Such oxide layers can cause a reduction in the effective tensile stress of a 50 nm thick stoichiometric silicon nitride membrane by almost 50%. Additionally, intrinsic damping linearly increases with the silicon dioxide film thickness. An oxide layer of 1.5 nm grown in just 10 s in a 50 W oxygen plasma almost doubled the intrinsic damping. The oxide surface layer can be efficiently removed in buffered hydrofluoric acid.

Use of silicon in liquid sintered silicon nitrides and sialons

DOEpatents

Raj, R.; Baik, S.

1984-12-11

This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

Use of silicon in liquid sintered silicon nitrides and sialons

DOEpatents

Raj, Rishi; Baik, Sunggi

1984-12-11

This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

Thermal conversion of an iron nitride-silicon nitride precursor into a ferromagnetic nanocomposite

NASA Astrophysics Data System (ADS)

Maya, L.; Thompson, J. R.; Song, K. J.; Warmack, R. J.

1998-01-01

Iron nitride films, FeN, in a pure form and in the form of a nanocomposite in silicon nitride were prepared by reactive sputtering using iron or iron disilicide, respectively, as targets in a nitrogen plasma. Iron nitride decomposes into the elements by heating in vacuum to 800 °C. Intermediate phases such as Fe2N or Fe4N form at lower temperatures. The nanocomposites contain the iron phases as particles with an average size of ˜5 nm dispersed in the amorphous silicon nitride matrix. The magnetic properties of the nanocomposites were established. The precursor FeN-Si3N4 film is paramagnetic, while the Fe-Si3N4, obtained by heating in vacuum, is ferromagnetic and shows typical superparamagnetic behavior. These films are of interest as recording media with superior chemical and mechanical stability and may be encoded by localized heating.

Boron Nitride Nanoribbons from Exfoliation of Boron Nitride Nanotubes

NASA Technical Reports Server (NTRS)

Hung, Ching-Cheh; Hurst, Janet; Santiago, Diana

2017-01-01

Two types of boron nitride nanotubes (BNNTs) were exfoliated into boron nitride nanoribbons (BNNR), which were identified using transmission electron microscopy: (1) commercial BNNTs with thin tube walls and small diameters. Tube unzipping was indicated by a large decrease of the sample's surface area and volume for pores less than 2 nm in diameter. (2) BNNTs with large diameters and thick walls synthesized at NASA Glenn Research Center. Here, tube unraveling was indicated by a large increase in external surface area and pore volume. For both, the exfoliation process was similar to the previous reported method to exfoliate commercial hexagonal boron nitride (hBN): Mixtures of BNNT, FeCl3, and NaF (or KF) were sequentially treated in 250 to 350 C nitrogen for intercalation, 500 to 750 C air for exfoliation, and finally HCl for purification. Property changes of the nanosized boron nitride throughout this process were also similar to the previously observed changes of commercial hBN during the exfoliation process: Both crystal structure (x-ray diffraction data) and chemical properties (Fourier-transform infrared spectroscopy data) of the original reactant changed after intercalation and exfoliation, but most (not all) of these changes revert back to those of the reactant once the final, purified products are obtained.

Silicon Nitride for Direct Water-Splitting and Corrosion Mitigation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Head, J.; Turner, J.A.

2006-01-01

Todays fossil fuels are becoming harder to obtain, creating pollution problems, and posing hazards to people’s health. One alternative to fossil fuels is hydrogen, capable of serving as a clean and efficient energy carrier. Certain semiconductors are able to harness the energy of photons and direct it into water electrolysis in a process known as photoelectrochemical water splitting. Triple junction devices integrate three semiconductors of different band gaps resulting in a monolithic material that absorbs over a broader spectrum. Amorphous silicon (a-Si) is one such material that, when stacked in tandem, possesses water-splitting capabilities. Even though a-Si is capable ofmore » splitting water, it is an unstable material in solution and therefore requires a coating to protect the surface from corrosion. A stable, transparent material that has the potential for corrosion protection is silicon nitride. In this study, silicon nitride thin films were grown using DC magnetron sputtering with varying amounts of argon and nitrogen added to the system. X-ray diffraction indicated amorphous silicon nitride films. Current as a function of potential was determined from cyclic voltammetry measurements. Mott-Schottky analysis showed n-type behavior with absorption and transmission measurements indicated variation in flatband potentials. Variation in band gap values ranging from 1.90 to 4.0 eV. Corrosion measurements reveal that the silicon nitride samples exhibit both p-type and n-type behavior. Photocurrent over a range of potentials was greater in samples that were submerged in acidic electrolyte. Silicon nitride shows good stability in acidic, neutral, and basic solutions, indicative of a good material for corrosion mitigation.« less

Feasibility study of silicon nitride protection of plastic encapsulated semiconductors

NASA Technical Reports Server (NTRS)

Peters, J. W.; Hall, T. C.; Erickson, J. J.; Gebhart, F. L.

1979-01-01

The application of low temperature silicon nitride protective layers on wire bonded integrated circuits mounted on lead frame assemblies is reported. An evaluation of the mechanical and electrical compatibility of both plasma nitride and photochemical silicon nitride (photonitride) passivations (parallel evaluations) of integrated circuits which were then encapsulated in plastic is described. Photonitride passivation is compatible with all wire bonded lead frame assemblies, with or without initial chip passivation. Plasma nitride passivation of lead frame assemblies is possible only if the chip is passivated before lead frame assembly. The survival rate after the environmental test sequence of devices with a coating of plasma nitride on the chip and a coating of either plasma nitride or photonitride over the assembled device is significantly greater than that of devices assembled with no nitride protective coating over either chip or lead frame.

Resonant second harmonic generation in a gallium nitride two-dimensional photonic crystal on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zeng, Y.; Roland, I.; Checoury, X.

We demonstrate second harmonic generation in a gallium nitride photonic crystal cavity embedded in a two-dimensional free-standing photonic crystal platform on silicon. The photonic crystal nanocavity is optically pumped with a continuous-wave laser at telecom wavelengths in the transparency window of the nitride material. The harmonic generation is evidenced by the spectral range of the emitted signal, the quadratic power dependence vs. input power, and the spectral dependence of second harmonic signal. The harmonic emission pattern is correlated to the harmonic polarization generated by the second-order nonlinear susceptibilities χ{sub zxx}{sup (2)}, χ{sub zyy}{sup (2)} and the electric fields of the fundamentalmore » cavity mode.« less

Use of additives to improve microstructures and fracture resistance of silicon nitride ceramics

DOEpatents

Becher, Paul F [Oak Ridge, TN; Lin, Hua-Tay [Oak Ridge, TN

2011-06-28

A high-strength, fracture-resistant silicon nitride ceramic material that includes about 5 to about 75 wt-% of elongated reinforcing grains of beta-silicon nitride, about 20 to about 95 wt-% of fine grains of beta-silicon nitride, wherein the fine grains have a major axis of less than about 1 micron; and about 1 to about 15 wt-% of an amorphous intergranular phase comprising Si, N, O, a rare earth element and a secondary densification element. The elongated reinforcing grains have an aspect ratio of 2:1 or greater and a major axis measuring about 1 micron or greater. The elongated reinforcing grains are essentially isotropically oriented within the ceramic microstructure. The silicon nitride ceramic exhibits a room temperature flexure strength of 1,000 MPa or greater and a fracture toughness of 9 MPa-m.sup.(1/2) or greater. The silicon nitride ceramic exhibits a peak strength of 800 MPa or greater at 1200 degrees C. Also included are methods of making silicon nitride ceramic materials which exhibit the described high flexure strength and fracture-resistant values.

Hydrolytic Unzipping of Boron Nitride Nanotubes in Nitric Acid.

PubMed

Kim, Dukeun; Muramatsu, Hiroyuki; Kim, Yoong Ahm

2017-12-01

Boron nitride nanoribbons (BNNRs) have very attractive electrical and optical properties due to their unique edge states and width-related properties. Herein, for the first time, BNNRs were produced by a simple reflux of boron nitride nanotubes (BNNTs) in nitric acid containing water, which had led to unzipped sidewalls through hydrolysis. Their high reactivity that originated from edges was verified via a strong interaction with methylene blue.

Chemical Sharpening, Shortening, and Unzipping of Boron Nitride Nanotubes

NASA Technical Reports Server (NTRS)

Liao, Yunlong; Chen, Zhongfang; Connell, John W.; Fay, Catharine C.; Park, Cheol; Kim, Jae-Woo; Lin, Yi

2014-01-01

Boron nitride nanotubes (BNNTs), the one-dimensional member of the boron nitride nanostructure family, are generally accepted to be highly inert to oxidative treatments and can only be covalently modifi ed by highly reactive species. Conversely, it is discovered that the BNNTs can be chemically dispersed and their morphology modifi ed by a relatively mild method: simply sonicating the nanotubes in aqueous ammonia solution. The dispersed nanotubes are significantly corroded, with end-caps removed, tips sharpened, and walls thinned. The sonication treatment in aqueous ammonia solution also removes amorphous BN impurities and shortened BNNTs, resembling various oxidative treatments of carbon nanotubes. Importantly, the majority of BNNTs are at least partially longitudinally cut, or "unzipped". Entangled and freestanding BN nanoribbons (BNNRs), resulting from the unzipping, are found to be approximately 5-20 nm in width and up to a few hundred nanometers in length. This is the fi rst chemical method to obtain BNNRs from BNNT unzipping. This method is not derived from known carbon nanotube unzipping strategies, but is unique to BNNTs because the use of aqueous ammonia solutions specifi cally targets the B-N bond network. This study may pave the way for convenient processing of BNNTs, previously thought to be highly inert, toward controlling their dispersion, purity, lengths, and electronic properties.

Silicon photonic IC embedded optical-PCB for high-speed interconnect application

NASA Astrophysics Data System (ADS)

Kallega, Rakshitha; Nambiar, Siddharth; Kumar, Abhai; Ranganath, Praveen; Selvaraja, Shankar Kumar

2018-02-01

Optical-Printed Circuit Board (PCB) is an emerging optical interconnect technology to bridge the gap between the board edge and the processing module. The technology so far has been used as a broadband transmitter using polymer waveguides in the PCB. In this paper, we report a Silicon Nitride based photonic IC embedded in the PCB along with the polymers as waveguides in the PCB. The motivation for such integration is to bring routing capability and to reduce the power loss due to broadcasting mode.

Crystallization of the glassy grain boundary phase in silicon nitride ceramics

NASA Technical Reports Server (NTRS)

Drummond, Charles H., III

1991-01-01

The role was studied of the intergranular glassy phase in silicon nitride as-processed with yttria as a sintering aid. The microstructure, crystallization, and viscosity of the glassy phase were areas studied. Crystallization of the intergranular glassy phase to more refractory crystalline phases should improve the high temperature mechanical properties of the silicon nitride. The addition of a nucleating agent will increase the rate of crystallization. The measurement of the viscosity of the glassy phase will permit the estimation of the high temperature deformation of the silicon nitride.

Corrosion Characteristics of Silicon Carbide and Silicon Nitride

PubMed Central

Munro, R. G.; Dapkunas, S. J.

1993-01-01

The present work is a review of the substantial effort that has been made to measure and understand the effects of corrosion with respect to the properties, performance, and durability of various forms of silicon carbide and silicon nitride. The review encompasses corrosion in diverse environments, usually at temperatures of 1000 °C or higher. The environments include dry and moist oxygen, mixtures of hot gaseous vapors, molten salts, molten metals, and complex environments pertaining to coal ashes and slags. PMID:28053489

RF sputtered silicon and hafnium nitrides as applied to 440C steel

NASA Technical Reports Server (NTRS)

Grill, A.; Aron, P. R.

1984-01-01

Silicon nitride and hafnium nitride coatings were deposited on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. The coatings and the interface between the coating and substrate were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. Oxide was found at all interfaces with an interface width of at least 600 A for the oxidized substrates and at least 300 A for the unoxidized substrates. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C. Coatings of both nitrides deposited at 8 mtorr were found to have increased adhesion to both oxidized and unoxidized 440C over those deposited at 20 mtorr.

Silicon nitride reinforced with molybdenum disilicide

DOEpatents

Petrovic, John J.; Honnell, Richard E.

1991-01-01

Compositions of matter comprised of silicon nitride and molybdenum disilicide and methods of making the compositions, where the molybdenum disilicide is present in amounts ranging from about 5 to about 50 vol. %.

Boron nitride nanotube as a delivery system for platinum drugs: Drug encapsulation and diffusion coefficient prediction.

PubMed

Khatti, Zahra; Hashemianzadeh, Seyed Majid

2016-06-10

Molecular dynamics (MD) simulation has been applied to investigate a drug delivery system based on boron nitride nanotubes, particularly the delivery of platinum-based anticancer drugs. For this propose, the behavior of carboplatin drugs inserted in boron nitride nanotubes (BNNT) as a carrier was studied. The diffusion rate of water molecules and carboplatin was investigated inside functionalized and pristine boron nitride nanotubes. The penetration rate of water and drug in functionalized BNNT was higher than that in pristine BNNT due to favorable water-mediated hydrogen bonding in hydroxyl edge-functionalized BNNT. Additionally, the encapsulation of multiple carboplatin drugs inside functionalized boron nitride nanotubes with one to five drug molecules confined inside the nanotube cavity was examined. At high drug loading, the hydrogen bond formation between adjacent drugs and the non-bonded van der Waals interaction between carboplatin and functionalized BNNT inner surface were found to be influential in drug displacement within the functionalized BNNT cavity for higher drug-loading capacity. Copyright © 2016 Elsevier B.V. All rights reserved.

Multi-walled boron nitride nanotubes as self-excited launchers.

PubMed

Li, Yifan; Zhou, Yi; Wu, Yan; Huang, Chengchi; Wang, Long; Zhou, Xuyan; Zhao, Zhenyang; Li, Hui

2017-07-27

A self-excited launcher consisting of multi-walled boron nitride nanotubes (BNNTs) has been investigated using molecular dynamics simulation. The results show that, after a period of high frequency oscillation, the innermost BNNT can be spontaneously ejected along its central axis at a relatively fast speed. The launching is caused by the energy transfer between the nanotubes and without absorbing energy from the external environment. Most self-excited launchers could launch their innermost nanotube, although an inappropriate structure of the nanotubes contributes to a blocked or failed launch. In addition, a launch angle corrector and a nanotube receiver associated with a self-excited launcher are also manufactured to precisely control the launch angle and distance of the BNNTs. This study provides the possibility to fabricate and design self-excited launchers using multi-walled nanotubes.

Silicon Nitride Photonic Integration Platforms for Visible, Near-Infrared and Mid-Infrared Applications

PubMed Central

Micó, Gloria; Pastor, Daniel; Pérez, Daniel; Doménech, José David; Fernández, Juan; Baños, Rocío; Alemany, Rubén; Sánchez, Ana M.; Cirera, Josep M.; Mas, Roser

2017-01-01

Silicon nitride photonics is on the rise owing to the broadband nature of the material, allowing applications of biophotonics, tele/datacom, optical signal processing and sensing, from visible, through near to mid-infrared wavelengths. In this paper, a review of the state of the art of silicon nitride strip waveguide platforms is provided, alongside the experimental results on the development of a versatile 300 nm guiding film height silicon nitride platform. PMID:28895906

Process for manufacture of semipermeable silicon nitride membranes

DOEpatents

Galambos, Paul Charles; Shul, Randy J.; Willison, Christi Gober

2003-12-09

A new class of semipermeable membranes, and techniques for their fabrication, have been developed. These membranes, formed by appropriate etching of a deposited silicon nitride layer, are robust, easily manufacturable, and compatible with a wide range of silicon micromachining techniques.

Single-crystal gallium nitride nanotubes.

PubMed

Goldberger, Joshua; He, Rongrui; Zhang, Yanfeng; Lee, Sangkwon; Yan, Haoquan; Choi, Heon-Jin; Yang, Peidong

2003-04-10

Since the discovery of carbon nanotubes in 1991 (ref. 1), there have been significant research efforts to synthesize nanometre-scale tubular forms of various solids. The formation of tubular nanostructure generally requires a layered or anisotropic crystal structure. There are reports of nanotubes made from silica, alumina, silicon and metals that do not have a layered crystal structure; they are synthesized by using carbon nanotubes and porous membranes as templates, or by thin-film rolling. These nanotubes, however, are either amorphous, polycrystalline or exist only in ultrahigh vacuum. The growth of single-crystal semiconductor hollow nanotubes would be advantageous in potential nanoscale electronics, optoelectronics and biochemical-sensing applications. Here we report an 'epitaxial casting' approach for the synthesis of single-crystal GaN nanotubes with inner diameters of 30-200 nm and wall thicknesses of 5-50 nm. Hexagonal ZnO nanowires were used as templates for the epitaxial overgrowth of thin GaN layers in a chemical vapour deposition system. The ZnO nanowire templates were subsequently removed by thermal reduction and evaporation, resulting in ordered arrays of GaN nanotubes on the substrates. This templating process should be applicable to many other semiconductor systems.

Synthesis of fine-grained .alpha.-silicon nitride by a combustion process

DOEpatents

Holt, J. Birch; Kingman, Donald D.; Bianchini, Gregory M.

1990-01-01

A combustion synthesis process for the preparation of .alpha.-silicon nitride and composites thereof is disclosed. Preparation of the .alpha.-silicon nitride comprises the steps of dry mixing silicon powder with an alkali metal azide, such as sodium azide, cold-pressing the mixture into any desired shape, or loading the mixture into a fused, quartz crucible, loading the crucible into a combustion chamber, pressurizing the chamber with nitrogen and igniting the mixture using an igniter pellet. The method for the preparation of the composites comprises dry mixing silicon powder (Si) or SiO.sub.2, with a metal or metal oxide, adding a small amount of an alkali metal azide such as sodium azide, introducing the mixture into a suitable combustion chamber, pressurizing the combustion chamber with nitrogen, igniting the mixture within the combustion chamber, and isolating the .alpha.-silicon nitride formed as a reaction product.

Purification of boron nitride nanotubes via polymer wrapping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Jin-Hyuk; Kim, Jaewoo; WCI Quantum Beam based Radiation Research Center, Korea Atomic Energy Research Institute, 1045 Daedukdaero, Daejeon 305-353

2013-03-15

Highlights: ► Surface modification of boron nitride nanotubes using polymeric materials. ► Surface-modified BNNT was purified with a simple dilution-centrifugation step. ► Surface-modified BNNT can be directly used for polymer composite fabrication ► Degree of purification was analyzed by Raman spectroscopy. - Abstract: Boron nitride nanotubes (BNNT) synthesized by a ball milling-annealing were surface-modified using three different types of polymeric materials. Those materials were chosen depending on future applications especially in polymer nanocomposite fabrications. We found that the surface-modified BNNT can be purified with a simple dilution-centrifugation step, which would be suitable for large-scale purification. Degree of purification was monitoredmore » by means of the center peak position and FWHM of E{sub 2g} mode of BNNT in Raman spectra. As the purification of BNNT develops, the peak position was up-shifted while FWHM of the peak was narrowed.« less

Thermal conduction mechanisms in isotope-disordered boron nitride and carbon nanotubes

NASA Astrophysics Data System (ADS)

Savic, Ivana; Mingo, Natalio; Stewart, Derek

2009-03-01

We present first principles studies which determine dominant effects limiting the heat conduction in isotope-disordered boron nitride and carbon nanotubes [1]. Using an ab initio atomistic Green's function approach, we demonstrate that localization cannot be observed in the thermal conductivity measurements [1], and that diffusive scattering is the dominant mechanism which reduces the thermal conductivity [2]. We also give concrete predictions of the magnitude of the isotope effect on the thermal conductivities of carbon and boron nitride single-walled nanotubes [2]. We furthermore show that intershell scattering is not the main limiting mechanism for the heat flow through multi-walled boron nitride nanotubes [1], and that heat conduction restricted to a few shells leads to the low thermal conductivities experimentally measured [1]. We consequently successfully compare the results of our calculations [3] with the experimental measurements [1]. [1] C. W. Chang, A. M. Fennimore, A. Afanasiev, D. Okawa, T. Ikuno, H. Garcia, D. Li, A. Majumdar, A. Zettl, Phys. Rev. Lett. 2006, 97, 085901. [2] I. Savic, N. Mingo, D. A. Stewart, Phys. Rev. Lett. 2008, 101, 165502. [3] I. Savic, D. A. Stewart, N. Mingo, to be published.

Thermal and Kerr nonlinear properties of plasma-deposited silicon nitride/ silicon dioxide waveguides.

PubMed

Ikeda, Kazuhiro; Saperstein, Robert E; Alic, Nikola; Fainman, Yeshaiahu

2008-08-18

We introduce and present experimental evaluations of loss and nonlinear optical response in a waveguide and an optical resonator, both implemented with a silicon nitride/ silicon dioxide material platform prepared by plasma-enhanced chemical vapor deposition with dual frequency reactors that significantly reduce the stress and the consequent loss of the devices. We measure a relatively small loss of approximately 4dB/cm in the waveguides. The fabricated ring resonators in add-drop and all-pass arrangements demonstrate quality factors of Q=12,900 and 35,600. The resonators are used to measure both the thermal and ultrafast Kerr nonlinearities. The measured thermal nonlinearity is larger than expected, which is attributed to slower heat dissipation in the plasma-deposited silicon dioxide film. The n2 for silicon nitride that is unknown in the literature is measured, for the first time, as 2.4 x 10(-15)cm(2)/W, which is 10 times larger than that for silicon dioxide.

Fabrication of sinterable silicon nitride by injection molding

NASA Technical Reports Server (NTRS)

Quackenbush, C. L.; French, K.; Neil, J. T.

1982-01-01

Transformation of structural ceramics from the laboratory to production requires development of near net shape fabrication techniques which minimize finish grinding. One potential technique for producing large quantities of complex-shaped parts at a low cost, and microstructure of sintered silicon nitride fabricated by injection molding is discussed and compared to data generated from isostatically dry-pressed material. Binder selection methodology, compounding of ceramic and binder components, injection molding techniques, and problems in binder removal are discussed. Strength, oxidation resistance, and microstructure of sintered silicon nitride fabricated by injection molding is discussed and compared to data generated from isostatically dry-pressed material.

Boron Nitride Nanotube: Synthesis and Applications

NASA Technical Reports Server (NTRS)

Tiano, Amanda L.; Park, Cheol; Lee, Joseph W.; Luong, Hoa H.; Gibbons, Luke J.; Chu, Sang-Hyon; Applin, Samantha I.; Gnoffo, Peter; Lowther, Sharon; Kim, Hyun Jung;

Boron nitride nanotube: synthesis and applications

NASA Astrophysics Data System (ADS)

Tiano, Amanda L.; Park, Cheol; Lee, Joseph W.; Luong, Hoa H.; Gibbons, Luke J.; Chu, Sang-Hyon; Applin, Samantha; Gnoffo, Peter; Lowther, Sharon; Kim, Hyun Jung; Danehy, Paul M.; Inman, Jennifer A.; Jones, Stephen B.; Kang, Jin Ho; Sauti, Godfrey; Thibeault, Sheila A.; Yamakov, Vesselin; Wise, Kristopher E.; Su, Ji; Fay, Catharine C.

2014-04-01

Scientists have predicted that carbon's immediate neighbors on the periodic chart, boron and nitrogen, may also form perfect nanotubes, since the advent of carbon nanotubes (CNTs) in 1991. First proposed then synthesized by researchers at UC Berkeley in the mid 1990's, the boron nitride nanotube (BNNT) has proven very difficult to make until now. Herein we provide an update on a catalyst-free method for synthesizing highly crystalline, small diameter BNNTs with a high aspect ratio using a high power laser under a high pressure and high temperature environment first discovered jointly by NASA/NIA/JSA. Progress in purification methods, dispersion studies, BNNT mat and composite formation, and modeling and diagnostics will also be presented. The white BNNTs offer extraordinary properties including neutron radiation shielding, piezoelectricity, thermal oxidative stability (> 800°C in air), mechanical strength, and toughness. The characteristics of the novel BNNTs and BNNT polymer composites and their potential applications are discussed.

Improved reaction sintered silicon nitride. [protective coatings to improve oxidation resistance

NASA Technical Reports Server (NTRS)

Baumgartner, H. R.

1978-01-01

Processing treatments were applied to as-nitrided reaction sintered silicon nitride (RSSN) with the purposes of improving strength after processing to above 350 MN/m2 and improving strength after oxidation exposure. The experimental approaches are divided into three broad classifications: sintering of surface-applied powders; impregnation of solution followed by further thermal processing; and infiltration of molten silicon and subsequent carburization or nitridation of the silicon. The impregnation of RSSN with solutions of aluminum nitrate and zirconyl chloride, followed by heating at 1400-1500 C in a nitrogen atmosphere containing silicon monoxide, improved RSSN strength and oxidation resistance. The room temperature bend strength of RSSN was increased nearly fifty percent above the untreated strength with mean absolute strengths up to 420 MN/m2. Strengths of treated samples that were measured after a 12 hour oxidation exposure in air were up to 90 percent of the original as-nitrided strength, as compared to retained strengths in the range of 35 to 60 percent for untreated RSSN after the same oxidation exposure.

Broadband wavelength conversion in hydrogenated amorphous silicon waveguide with silicon nitride layer

NASA Astrophysics Data System (ADS)

Wang, Jiang; Li, Yongfang; Wang, Zhaolu; Han, Jing; Huang, Nan; Liu, Hongjun

2018-01-01

Broadband wavelength conversion based on degenerate four-wave mixing is theoretically investigated in a hydrogenated amorphous silicon (a-Si:H) waveguide with silicon nitride inter-cladding layer (a-Si:HN). We have found that enhancement of the non-linear effect of a-Si:H waveguide nitride intermediate layer facilitates broadband wavelength conversion. Conversion bandwidth of 490 nm and conversion efficiency of 11.4 dB were achieved in a numerical simulation of a 4 mm-long a-Si:HN waveguide under 1.55 μm continuous wave pumping. This broadband continuous-wave wavelength converter has potential applications in photonic networks, a type of readily manufactured low-cost highly integrated optical circuits.

Resistance of Silicon Nitride Turbine Components to Erosion and Hot Corrosion/oxidation Attack

NASA Technical Reports Server (NTRS)

Strangmen, Thomas E.; Fox, Dennis S.

1994-01-01

Silicon nitride turbine components are under intensive development by AlliedSignal to enable a new generation of higher power density auxiliary power systems. In order to be viable in the intended applications, silicon nitride turbine airfoils must be designed for survival in aggressive oxidizing combustion gas environments. Erosive and corrosive damage to ceramic airfoils from ingested sand and sea salt must be avoided. Recent engine test experience demonstrated that NT154 silicon nitride turbine vanes have exceptional resistance to sand erosion, relative to superalloys used in production engines. Similarly, NT154 silicon nitride has excellent resistance to oxidation in the temperature range of interest - up to 1400 C. Hot corrosion attack of superalloy gas turbine components is well documented. While hot corrosion from ingested sea salt will attack silicon nitride substantially less than the superalloys being replaced in initial engine applications, this degradation has the potential to limit component lives in advanced engine applications. Hot corrosion adversely affects the strength of silicon nitride in the 850 to 1300 C range. Since unacceptable reductions in strength must be rapidly identified and avoided, AlliedSignal and the NASA Lewis Research Center have pioneered the development of an environmental life prediction model for silicon nitride turbine components. Strength retention in flexure specimens following 1 to 3300 hour exposures to high temperature oxidation and hot corrosion has been measured and used to calibrate the life prediction model. Predicted component life is dependent upon engine design (stress, temperature, pressure, fuel/air ratio, gas velocity, and inlet air filtration), mission usage (fuel sulfur content, location (salt in air), and times at duty cycle power points), and material parameters. Preliminary analyses indicate that the hot corrosion resistance of NT154 silicon nitride is adequate for AlliedSignal's initial engine

Functionalized boron nitride nanotubes

DOEpatents

Sainsbury, Toby; Ikuno, Takashi; Zettl, Alexander K

2014-04-22

A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

Manufacture of sintered silicon nitrides

NASA Technical Reports Server (NTRS)

Iwai, T.

1985-01-01

Sintered silicon nitrides are manufactured by sintering Si3N powder containing 2 to 15% in wt of a powder mixture composed of nitride powder of lanthanide or Y 100 parts and AIN powder less than 100 parts at 1500 to 1900 deg. temperature under a pressure of less than 200 Kg/sq. cm. The sintered Si3N has high mechanical strength in high temperature. Thus, Si3N4 93.0, Y 5.0 and AlN 2.0% in weight were wet mixed in acetone in N atom, molded and sintered at 1750 deg. and 1000 Kg/sq. cm. to give a sintered body having high hardness.

Packing C60 in Boron Nitride Nanotubes

NASA Astrophysics Data System (ADS)

Mickelson, W.; Aloni, S.; Han, Wei-Qiang; Cumings, John; Zettl, A.

2003-04-01

We have created insulated C60 nanowire by packing C60 molecules into the interior of insulating boron nitride nanotubes (BNNTs). For small-diameter BNNTs, the wire consists of a linear chain of C60 molecules. With increasing BNNT inner diameter, unusual C60 stacking configurations are obtained (including helical, hollow core, and incommensurate) that are unknown for bulk or thin-film forms of C60. C60 in BNNTs thus presents a model system for studying the properties of dimensionally constrained ``silo'' crystal structures. For the linear-chain case, we have fused the C60 molecules to form a single-walled carbon nanotube inside the insulating BNNT.

Free vibration analysis of single-walled boron nitride nanotubes based on a computational mechanics framework

NASA Astrophysics Data System (ADS)

Yan, J. W.; Tong, L. H.; Xiang, Ping

2017-12-01

Free vibration behaviors of single-walled boron nitride nanotubes are investigated using a computational mechanics approach. Tersoff-Brenner potential is used to reflect atomic interaction between boron and nitrogen atoms. The higher-order Cauchy-Born rule is employed to establish the constitutive relationship for single-walled boron nitride nanotubes on the basis of higher-order gradient continuum theory. It bridges the gaps between the nanoscale lattice structures with a continuum body. A mesh-free modeling framework is constructed, using the moving Kriging interpolation which automatically satisfies the higher-order continuity, to implement numerical simulation in order to match the higher-order constitutive model. In comparison with conventional atomistic simulation methods, the established atomistic-continuum multi-scale approach possesses advantages in tackling atomic structures with high-accuracy and high-efficiency. Free vibration characteristics of single-walled boron nitride nanotubes with different boundary conditions, tube chiralities, lengths and radii are examined in case studies. In this research, it is pointed out that a critical radius exists for the evaluation of fundamental vibration frequencies of boron nitride nanotubes; opposite trends can be observed prior to and beyond the critical radius. Simulation results are presented and discussed.

Tensile test of pressureless-sintered silicon nitride at elevated temperature

NASA Technical Reports Server (NTRS)

Matsusue, K.; Fujisawa, Y.; Takahara, K.

1985-01-01

Uniaxial tensile strength tests of pressureless sintered silicon nitride were carried out in air at temperatures ranging from room temperature up to 1600 C. Silicon nitrides containing Y2O3, Al2O3, Al2O3-MgO, or MgO-CeO2 additives were tested. The results show that the composition of the additive used influences the strength characteristics of the silicon nitride. The tensile strength rapidly decreased at temperatures above 1000 C for the materials containing MgO as the additive and above 1000 C for the material with Y2O3. When the temperature increased to as high as 1300 C, the strength decreased to about 10 percent of the room temperature strength in each case. Observations of the fracture origin and of the crack propagation on the fracture surfaces are discussed.

Elevated temperature mechanical behavior of monolithic and SiC whisker-reinforced silicon nitrides

NASA Technical Reports Server (NTRS)

Salem, Jonathan A.; Choi, Sung R.; Sanders, William A.; Fox, Dennis S.

1991-01-01

The mechanical behavior of a 30 volume percent SiC whisker reinforced silicon nitride and a similar monolithic silicon nitride were measured at several temperatures. Measurements included strength, fracture toughness, crack growth resistance, dynamic fatigue susceptibility, post oxidation strength, and creep rate. Strength controlling defects were determined with fractographic analysis. The addition of SiC whiskers to silicon nitride did not substantially improve the strength, fracture toughness, or crack growth resistance. However, the fatigue resistance, post oxidation strength, and creep resistance were diminished by the whisker addition.

Simulation of STM technique for electron transport through boron-nitride nanotubes

NASA Astrophysics Data System (ADS)

Ganji, M. D.; Mohammadi-nejad, A.

2008-06-01

We report first-principles calculations on the electrical transport properties of boron-nitrid nanotubes (BNNTs). We consider a single walled (5,0) boron-nitrid nanotube sandwiched between an Au(1 0 0) substrate and a monatomic Au scanning tunneling microscope (STM) tip. Lateral motion of the tip over the nanotube wall cause it to change from one conformation class to the others and to switch between a strongly and a weakly conducting state. Thus, surprisingly, despite their apparent simplicity these Au/BNNT/Au nanowires are shown to be a convenient switch. Experiments with a conventional STM are proposed to test these predictions. The projection of the density of states (PDOS) and the transmission coefficients T(E) of the two-probe systems at zero bias are analyzed, and it suggests that the variation of the coupling between the wire and the electrodes leads to switching behaviour.

On the photon annealing of silicon-implanted gallium-nitride layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seleznev, B. I., E-mail: Boris.Seleznev@novsu.ru; Moskalev, G. Ya.; Fedorov, D. G.

2016-06-15

The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.

Silicon nitride photonics: from visible to mid-infrared wavelengths

NASA Astrophysics Data System (ADS)

Micó, Gloria; Bru, Luis A.; Pastor, Daniel; Doménech, David; Fernández, Juan; Sánchez, Ana; Cirera, Josep M.; Domínguez, Carlos; Muñoz, Pascual

2018-02-01

Silicon nitride has received a lot of attention during the last ten years, for applications such as bio-photonics, tele/datacom, optical signal processing and sensing. In this paper, firstly an updated review of the state of the art of silicon nitride photonics integration platforms will be provided. Secondly, our developments on a moderate confinement Si3N4 platform in the near-infrared will be presented. Finally, our steps towards establishing a Si3N4 based platform for broadband operation spanning from visible to mid-infrared wavelengths will be introduced.

Surface reaction of silicon chlorides during atomic layer deposition of silicon nitride

NASA Astrophysics Data System (ADS)

Yusup, Luchana L.; Park, Jae-Min; Mayangsari, Tirta R.; Kwon, Young-Kyun; Lee, Won-Jun

2018-02-01

The reaction of precursor with surface active site is the critical step in atomic layer deposition (ALD) process. We performed the density functional theory calculation with DFT-D correction to study the surface reaction of different silicon chloride precursors during the first half cycle of ALD process. SiCl4, SiH2Cl2, Si2Cl6 and Si3Cl8 were considered as the silicon precursors, and an NH/SiNH2*-terminated silicon nitride surface was constructed to model the thermal ALD processes using NH3 as well as the PEALD processes using NH3 plasma. The total energies of the system were calculated for the geometry-optimized structures of physisorption, chemisorption, and transition state. The order of silicon precursors in energy barrier, from lowest to highest, is Si3Cl8 (0.92 eV), Si2Cl6 (3.22 eV), SiH2Cl2 (3.93 eV) and SiCl4 (4.49 eV). Silicon precursor with lower energy barrier in DFT calculation showed lower saturation dose in literature for both thermal and plasma-enhanced ALD of silicon nitride. Therefore, DFT calculation is a promising tool in predicting the reactivity of precursor during ALD process.

Is hexagonal boron nitride always good as a substrate for carbon nanotube-based devices?

PubMed

Kang, Seoung-Hun; Kim, Gunn; Kwon, Young-Kyun

2015-02-21

Hexagonal boron nitride sheets have been noted especially for their enhanced properties as substrates for sp(2) carbon-based nanodevices. To evaluate whether such enhanced properties would be retained under various realistic conditions, we investigate the structural and electronic properties of semiconducting carbon nanotubes on perfect and defective hexagonal boron nitride sheets under an external electric field as well as with a metal impurity, using density functional theory. We verify that the use of a perfect hexagonal boron nitride sheet as a substrate indeed improves the device performances of carbon nanotubes, compared with the use of conventional substrates such as SiO2. We further show that even the hexagonal boron nitride with some defects can show better performance as a substrate. Our calculations, on the other hand, also suggest that some defective boron nitride layers with a monovacancy and a nickel impurity could bring about poor device behavior since the imperfections impair electrical conductivity due to residual scattering under an applied electric field.

Fabrication of turbine components and properties of sintered silicon nitride

NASA Technical Reports Server (NTRS)

Neil, J. T.; French, K. W.; Quackenbush, C. L.; Smith, J. T.

1982-01-01

This paper presents a status report on the injection molding of sinterable silicon nitride at GTE Laboratories. The effort involves fabrication of single axial turbine blades and monolithic radial turbine rotors. The injection molding process is reviewed and the fabrication of the turbine components discussed. Oxidation resistance and strength results of current injection molded sintered silicon nitride as well as dimensional checks on sintered turbine blades demonstrate that this material is a viable candidate for high temperature structural applications.

Photoluminescence of amorphous and crystalline silicon nanoclusters in silicon nitride and oxide superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shuleiko, D. V., E-mail: shuleyko.dmitriy@physics.msu.ru; Zabotnov, S. V.; Zhigunov, D. M.

2017-02-15

The photoluminescence properties of silicon nitride and oxide superlattices fabricated by plasmaenhanced chemical vapor deposition are studied. In the structures annealed at a temperature of 1150°C, photoluminescence peaks at about 1.45 eV are recorded. The peaks are defined by exciton recombination in silicon nanocrystals formed upon annealing. Along with the 1.45-eV peaks, a number of peaks defined by recombination at defects at the interface between the nanocrystals and silicon-nitride matrix are detected. The structures annealed at 900°C exhibit a number of photoluminescence peaks in the range 1.3–2.0 eV. These peaks are defined by both the recombination at defects and excitonmore » recombination in amorphous silicon nanoclusters formed at an annealing temperature of 900°C. The observed features of all of the photoluminescence spectra are confirmed by the nature of the photoluminescence kinetics.« less

Rebar graphene from functionalized boron nitride nanotubes.

PubMed

Li, Yilun; Peng, Zhiwei; Larios, Eduardo; Wang, Gunuk; Lin, Jian; Yan, Zheng; Ruiz-Zepeda, Francisco; José-Yacamán, Miguel; Tour, James M

2015-01-27

The synthesis of rebar graphene on Cu substrates is described using functionalized boron nitride nanotubes (BNNTs) that were annealed or subjected to chemical vapor deposition (CVD) growth of graphene. Characterization shows that the BNNTs partially unzip and form a reinforcing bar (rebar) network within the graphene layer that enhances the mechanical strength through covalent bonds. The rebar graphene is transferrable to other substrates without polymer assistance. The optical transmittance and conductivity of the hybrid rebar graphene film was tested, and a field effect transistor was fabricated to explore its electrical properties. This method of synthesizing 2D hybrid graphene/BN structures should enable the hybridization of various 1D nanotube and 2D layered structures with enhanced mechanical properties.

Embedded arrays of vertically aligned carbon nanotube carpets and methods for making them

DOEpatents

Kim, Myung Jong; Nicholas, Nolan Walker; Kittrell, W. Carter; Schmidt, Howard K.

2015-06-30

According to some embodiments, the present invention provides a system and method for supporting a carbon nanotube array that involve an entangled carbon nanotube mat integral with the array, where the mat is embedded in an embedding material. The embedding material may be depositable on a carbon nanotube. A depositable material may be metallic or nonmetallic. The embedding material may be an adhesive material. The adhesive material may optionally be mixed with a metal powder. The embedding material may be supported by a substrate or self-supportive. The embedding material may be conductive or nonconductive. The system and method provide superior mechanical and, when applicable, electrical, contact between the carbon nanotubes in the array and the embedding material. The optional use of a conductive material for the embedding material provides a mechanism useful for integration of carbon nanotube arrays into electronic devices.

Quantum electromechanics on silicon nitride nanomembranes

PubMed Central

Fink, J. M.; Kalaee, M.; Pitanti, A.; Norte, R.; Heinzle, L.; Davanço, M.; Srinivasan, K.; Painter, O.

2016-01-01

Radiation pressure has recently been used to effectively couple the quantum motion of mechanical elements to the fields of optical or microwave light. Integration of all three degrees of freedom—mechanical, optical and microwave—would enable a quantum interconnect between microwave and optical quantum systems. We present a platform based on silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Using planar capacitors with vacuum gaps of 60 nm and spiral inductor coils of micron pitch we realize microwave resonant circuits with large electromechanical coupling to planar acoustic structures of nanoscale dimensions and femtoFarad motional capacitance. Using this enhanced coupling, we demonstrate microwave backaction cooling of the 4.48 MHz mechanical resonance of a nanobeam to an occupancy as low as 0.32. These results indicate the viability of silicon nitride nanomembranes as an all-in-one substrate for quantum electro-opto-mechanical experiments. PMID:27484751

Quantum electromechanics on silicon nitride nanomembranes.

PubMed

Fink, J M; Kalaee, M; Pitanti, A; Norte, R; Heinzle, L; Davanço, M; Srinivasan, K; Painter, O

2016-08-03

Radiation pressure has recently been used to effectively couple the quantum motion of mechanical elements to the fields of optical or microwave light. Integration of all three degrees of freedom-mechanical, optical and microwave-would enable a quantum interconnect between microwave and optical quantum systems. We present a platform based on silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Using planar capacitors with vacuum gaps of 60 nm and spiral inductor coils of micron pitch we realize microwave resonant circuits with large electromechanical coupling to planar acoustic structures of nanoscale dimensions and femtoFarad motional capacitance. Using this enhanced coupling, we demonstrate microwave backaction cooling of the 4.48 MHz mechanical resonance of a nanobeam to an occupancy as low as 0.32. These results indicate the viability of silicon nitride nanomembranes as an all-in-one substrate for quantum electro-opto-mechanical experiments.

Use of free silicon in liquid phase sintering of silicon nitrides and sialons

DOEpatents

Raj, R.; Baik, S.

1985-11-12

This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

Use of free silicon in liquid phase sintering of silicon nitrides and sialons

DOEpatents

Raj, Rishi; Baik, Sunggi

1985-11-12

This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

Process for producing silicon nitride based articles of high fracture toughness and strength

DOEpatents

Huckabee, Marvin; Buljan, Sergej-Tomislav; Neil, Jeffrey T.

1991-01-01

A process for producing a silicon nitride-based article of improved fracture toughness and strength. The process involves densifying to at least 98% of theoretical density a mixture including (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 .mu.m and a surface area of about 8-12 m.sup.2 /g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 .mu.m and a surface area of about 2-4 m.sup.2 /g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. Optionally, the mixture may be blended with a binder and injection molded to form a green body, which then may be densified by, for example, hot isostatic pressing.

Process for producing silicon nitride based articles of high fracture toughness and strength

DOEpatents

Huckabee, M.; Buljan, S.T.; Neil, J.T.

1991-09-10

A process for producing a silicon nitride-based article of improved fracture toughness and strength is disclosed. The process involves densifying to at least 98% of theoretical density a mixture including (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12 m[sup 2]/g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. Optionally, the mixture may be blended with a binder and injection molded to form a green body, which then may be densified by, for example, hot isostatic pressing.

Nanoscale Etching and Indentation of Silicon Surfaces with Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Dzegilenko, Fedor N.; Srivastava, Deepak; Saini, Subhash

1998-01-01

The possibility of nanolithography of silicon and germanium surfaces with bare carbon nanotube tips of scanning probe microscopy devices is considered with large scale classical molecular dynamics (MD) simulations employing Tersoff's reactive many-body potential for heteroatomic C/Si/Ge system. Lithography plays a key role in semiconductor manufacturing, and it is expected that future molecular and quantum electronic devices will be fabricated with nanolithographic and nanodeposition techniques. Carbon nanotubes, rolled up sheets of graphene made of carbon, are excellent candidates for use in nanolithography because they are extremely strong along axial direction and yet extremely elastic along radial direction. In the simulations, the interaction of a carbon nanotube tip with silicon surfaces is explored in two regimes. In the first scenario, the nanotubes barely touch the surface, while in the second they are pushed into the surface to make "nano holes". The first - gentle scenario mimics the nanotube-surface chemical reaction induced by the vertical mechanical manipulation of the nanotube. The second -digging - scenario intends to study the indentation profiles. The following results are reported in the two cases. In the first regime, depending on the surface impact site, two major outcomes outcomes are the selective removal of either a single surface atom or a surface dimer off the silicon surface. In the second regime, the indentation of a silicon substrate by the nanotube is observed. Upon the nanotube withdrawal, several surface silicon atoms are adsorbed at the tip of the nanotube causing significant rearrangements of atoms comprising the surface layer of the silicon substrate. The results are explained in terms of relative strength of C-C, C-Si, and Si-Si bonds. The proposed method is very robust and does not require applied voltage between the nanotube tips and the surface. The implications of the reported controllable etching and hole-creating for

Silicon nitride films deposited with an electron beam created plasma

NASA Technical Reports Server (NTRS)

Bishop, D. C.; Emery, K. A.; Rocca, J. J.; Thompson, L. R.; Zamani, H.; Collins, G. J.

1984-01-01

The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

Rebar Graphene from Functionalized Boron Nitride Nanotubes

PubMed Central

2015-01-01

The synthesis of rebar graphene on Cu substrates is described using functionalized boron nitride nanotubes (BNNTs) that were annealed or subjected to chemical vapor deposition (CVD) growth of graphene. Characterization shows that the BNNTs partially unzip and form a reinforcing bar (rebar) network within the graphene layer that enhances the mechanical strength through covalent bonds. The rebar graphene is transferrable to other substrates without polymer assistance. The optical transmittance and conductivity of the hybrid rebar graphene film was tested, and a field effect transistor was fabricated to explore its electrical properties. This method of synthesizing 2D hybrid graphene/BN structures should enable the hybridization of various 1D nanotube and 2D layered structures with enhanced mechanical properties. PMID:25486451

Deposition of reactively ion beam sputtered silicon nitride coatings

NASA Technical Reports Server (NTRS)

Grill, A.

1982-01-01

An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target.

Measurement of the elastic modulus of a multi-wall boron nitride nanotube

NASA Astrophysics Data System (ADS)

Chopra, Nasreen G.; Zettl, A.

1998-02-01

We have experimentally determined the elastic properties of an individual multi-wall boron nitride (BN) nanotube. From the thermal vibration amplitude of a cantilevered BN nanotube observed in a transmission electron microscope, we find the axial Young's modulus to be 1.22 ± 0.24 TPa, a value consistent with theoretical estimates. The observed Young's modulus exceeds that of all other known insulating fibers. Our elasticity results confirm that BN nanotubes are highly crystalline with very few defects.

A Combination of Boron Nitride Nanotubes and Cellulose Nanofibers for the Preparation of a Nanocomposite with High Thermal Conductivity.

PubMed

Zeng, Xiaoliang; Sun, Jiajia; Yao, Yimin; Sun, Rong; Xu, Jian-Bin; Wong, Ching-Ping

2017-05-23

With the current development of modern electronics toward miniaturization, high-degree integration and multifunctionalization, considerable heat is accumulated, which results in the thermal failure or even explosion of modern electronics. The thermal conductivity of materials has thus attracted much attention in modern electronics. Although polymer composites with enhanced thermal conductivity are expected to address this issue, achieving higher thermal conductivity (above 10 W m -1 K -1 ) at filler loadings below 50.0 wt % remains challenging. Here, we report a nanocomposite consisting of boron nitride nanotubes and cellulose nanofibers that exhibits high thermal conductivity (21.39 W m -1 K -1 ) at 25.0 wt % boron nitride nanotubes. Such high thermal conductivity is attributed to the high intrinsic thermal conductivity of boron nitride nanotubes and cellulose nanofibers, the one-dimensional structure of boron nitride nanotubes, and the reduced interfacial thermal resistance due to the strong interaction between the boron nitride nanotubes and cellulose nanofibers. Using the as-prepared nanocomposite as a flexible printed circuit board, we demonstrate its potential usefulness in electronic device-cooling applications. This thermally conductive nanocomposite has promising applications in thermal interface materials, printed circuit boards or organic substrates in electronics and could supplement conventional polymer-based materials.

Synthesis micro-scale boron nitride nanotubes at low substrate temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sajjad, Muhammad, E-mail: msajjadd@gmail.com; Makarov, Vladimir; Morell, Gerardo

2016-07-15

High temperature synthesis methods produce defects in 1D nanomaterials, which ultimately limit their applications. We report here the synthesis of micro-scale boron nitride nanotubes (BNNT) at low substrate temperature (300 {sup o}C) using a pulsed CO{sub 2} laser deposition technique in the presence of catalyst. The electron microscopic analyses have shown the nanotubes distributed randomly on the surface of the substrate. The average diameter (∼0.25 μm) of a nanotube, which is the highest reported value to date, is estimated by SEM data and confirmed by TEM measurements. These nanotubes are promising for high response deep-UV photo-luminescent devices. A detailed synthesismore » mechanism is presented and correlated with the experimental results.« less

Octave-spanning supercontinuum generation in a silicon-rich nitride waveguide.

PubMed

Liu, Xing; Pu, Minhao; Zhou, Binbin; Krückel, Clemens J; Fülöp, Attila; Torres-Company, Victor; Bache, Morten

2016-06-15

We experimentally show octave-spanning supercontinuum generation in a nonstoichiometric silicon-rich nitride waveguide when pumped by femtosecond pulses from an erbium fiber laser. The pulse energy and bandwidth are comparable to results achieved in stoichiometric silicon nitride waveguides, but our material platform is simpler to manufacture. We also observe wave-breaking supercontinuum generation by using orthogonal pumping in the same waveguide. Additional analysis reveals that the waveguide height is a powerful tuning parameter for generating mid-infrared dispersive waves while keeping the pump in the telecom band.

Wave propagation of carbon nanotubes embedded in an elastic medium

NASA Astrophysics Data System (ADS)

Natsuki, Toshiaki; Hayashi, Takuya; Endo, Morinobu

2005-02-01

This paper presents analytical models of wave propagation in single- and double-walled carbon nanotubes, as well as nanotubes embedded in an elastic matrix. The nanotube structures are treated within the multilayer thin shell approximation with the elastic properties taken to be those of the graphene sheet. The double-walled nanotubes are coupled together through the van der Waals force between the inner and outer nanotubes. For carbon nanotubes embedded in an elastic matrix, the surrounding elastic medium can be described by a Winkler model. Tube wave propagation of both symmetrical and asymmetrical modes can be analyzed based on the present elastic continuum model. It is found that the asymmetrical wave behavior of single- and double-walled nanotubes is significantly different. The behavior is also different from that in the surrounding elastic medium.

Waveguide silicon nitride grating coupler

NASA Astrophysics Data System (ADS)

Litvik, Jan; Dolnak, Ivan; Dado, Milan

2016-12-01

Grating couplers are one of the most used elements for coupling of light between optical fibers and photonic integrated components. Silicon-on-insulator platform provides strong confinement of light and allows high integration. In this work, using simulations we have designed a broadband silicon nitride surface grating coupler. The Fourier-eigenmode expansion and finite difference time domain methods are utilized in design optimization of grating coupler structure. The fully, single etch step grating coupler is based on a standard silicon-on-insulator wafer with 0.55 μm waveguide Si3N4 layer. The optimized structure at 1550 nm wavelength yields a peak coupling efficiency -2.6635 dB (54.16%) with a 1-dB bandwidth up to 80 nm. It is promising way for low-cost fabrication using complementary metal-oxide- semiconductor fabrication process.

Use of anionic surfactants for selective polishing of silicon dioxide over silicon nitride films using colloidal silica-based slurries

NASA Astrophysics Data System (ADS)

Penta, Naresh K.; Amanapu, H. P.; Peethala, B. C.; Babu, S. V.

2013-10-01

Four different anionic surfactants, sodium dodecyl sulfate, dodecyl benzene sulfonic acid (DBSA), dodecyl phosphate and Sodium lauroyl sarcosine, selected from the sulfate, phosphate, and carboxylic family, were investigated as additives in silica dispersions for selective polishing of silicon dioxide over silicon nitride films. We found that all these anionic surfactants suppress the nitride removal rates (RR) for pH ≤4 while more or less maintaining the oxide RRs, resulting in high oxide-to-nitride RR selectivity. The RR data obtained as a function of pH were explained based on pH dependent distributions of surfactant species, change in the zeta potentials of oxide and nitride surfaces, and thermogravimetric data. It appears that the negatively charged surfactant species preferentially adsorb on the positively charged nitride surface below IEP through its electrostatic interactions and form a bilayer adsorption, resulting in the suppression of nitride RRs. In contrast to the surfactants, K2SO4 interacts only weakly with the nitride surface and hence cannot suppress its RR.

The solvation study of carbon, silicon and their mixed nanotubes in water solution.

PubMed

Hashemi Haeri, Haleh; Ketabi, Sepideh; Hashemianzadeh, Seyed Majid

2012-07-01

Nanotubes are believed to open the road toward different modern fields, either technological or biological. However, the applications of nanotubes have been badly impeded for the poor solubility in water which is especially essential for studies in the presence of living cells. Therefore, water soluble samples are in demand. Herein, the outcomes of Monte Carlo simulations of different sets of multiwall nanotubes immersed in water are reported. A number of multi wall nanotube samples, comprised of pure carbon, pure silicon and several mixtures of carbon and silicon are the subjects of study. The simulations are carried out in an (N,V,T) ensemble. The purpose of this report is to look at the effects of nanotube size (diameter) and nanotube type (pure carbon, pure silicon or a mixture of carbon and silicon) variation on solubility of multiwall nanotubes in terms of number of water molecules in shell volume. It is found that the solubility of the multi wall carbon nanotube samples is size independent, whereas multi wall silicon nanotube samples solubility varies with diameter of the inner tube. The higher solubility of samples containing silicon can be attributed to the larger atomic size of silicon atom which provides more direct contact with the water molecules. The other affecting factor is the bigger inter space (the space between inner and outer tube) in the case of silicon samples. Carbon type multi wall nanotubes appeared as better candidates for transporting water molecules through a multi wall nanotube structure, while in the case of water adsorption problems it is better to use multi wall silicon nanotubes or a mixture of multi wall carbon/ silicon nanotubes.

Magnesium doping of boron nitride nanotubes

DOEpatents

Legg, Robert; Jordan, Kevin

2015-06-16

A method to fabricate boron nitride nanotubes incorporating magnesium diboride in their structure. In a first embodiment, magnesium wire is introduced into a reaction feed bundle during a BNNT fabrication process. In a second embodiment, magnesium in powder form is mixed into a nitrogen gas flow during the BNNT fabrication process. MgB.sub.2 yarn may be used for superconducting applications and, in that capacity, has considerably less susceptibility to stress and has considerably better thermal conductivity than these conventional materials when compared to both conventional low and high temperature superconducting materials.

Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants

DOEpatents

Pugar, Eloise A.; Morgan, Peter E. D.

1990-01-01

A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N.sub.n H.sub.(n+m) wherein: n=1-4 and m=2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200.degree.-1700.degree. C. for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si-N-H intermediate enables chemical pathways to be explored previously unavailable in conventional solid state approaches to silicon-nitrogen ceramics.

Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants

DOEpatents

Pugar, E.A.; Morgan, P.E.D.

1987-09-15

A process is disclosed for producing, at a low temperature, a high purity reaction product consisting essentially of silicon, nitrogen, and hydrogen which can then be heated to produce a high purity alpha silicon nitride. The process comprises: reacting together a particulate elemental high purity silicon with a high purity nitrogen-hydrogen reactant in its liquid state (such as ammonia or hydrazine) having the formula: N/sub n/H/sub (n+m)/ wherein: n = 1--4 and m = 2 when the nitrogen-hydrogen reactant is straight chain, and 0 when the nitrogen-hydrogen reactant is cyclic. High purity silicon nitride can be formed from this intermediate product by heating the intermediate product at a temperature of from about 1200--1700/degree/C for a period from about 15 minutes up to about 2 hours to form a high purity alpha silicon nitride product. The discovery of the existence of a soluble Si/endash/N/endash/H intermediate enables chemical pathways to be explored previously unavailable in conventional solid-state approaches to silicon-nitrogen ceramics

Preparation and evaluation of silicon nitride matrices for silicon nitride-SiC fiber composites. M.S. Thesis Final Technical Report

NASA Technical Reports Server (NTRS)

Axelson, Scott R.

1988-01-01

Continuous silicon carbide (SiC) fiber was added to three types of silicon nitride (Si3N4) matrices. Efforts were aimed at producing a dense Si3N4 matrix from reaction-bonded silicon nitride (RBSN) by hot-isostatic-pressing (HIP) and pressureless sintering, and from Si3N4 powder by hot-pressing. The sintering additives utilized were chosen to allow for densification, while not causing severe degradation of the fiber. The ceramic microstructures were evaluated using scanning optical microscopy. Vickers indentation was used to determine the microhardness and fracture toughness values of the matrices. The RBSN matrices in this study did not reach more than 80 percent of theoretical density after sintering at various temperatures, pressures, and additive levels. Hot-pressing Si3N4 powder produced the highest density matrices; hardness and toughness values were within an order of magnitude of the best literature values. The best sintering aid composition chosen included Y2O3, SiO2, and Al2O3 or AlN. Photomicrographs demonstrate a significant reduction of fiber attack by this additive composition.

Towards Multifunctional Characteristics of Embedded Structures With Carbon Nanotube Yarns

NASA Technical Reports Server (NTRS)

Hernandez, Corey D.; Gates, Thomas S.; Kahng, Seun K.

2006-01-01

This paper presents recent results on research of achieving multifunctional structures utilizing Carbon Nanotube (CNT) yarns. The investigation centers on creating composite structures with CNT yarns to simultaneously achieve increases in mechanical strength and the ability to sense strain. The CNT yarns used in our experiments are of the single-ply and two-ply variety with the single-ply yarns having diameters on the order of 10-20 m. The yarns are embedded in silicon rubber and polyurethane test specimens. Mechanical tests show an increase in modulus of elasticity, with an additional weight increase of far less than one-percent. Sensing characteristics of the yarns are investigated on stainless steel test beams in an electrical bridge configuration, and are observed to have a strain sensitivity of 0.7mV/V/1000 micro-strain. Also reported are measurements of the average strain distribution along the direction of the CNT yarns on square silicon rubber membranes.

Nano-solenoid: helicoid carbon-boron nitride hetero-nanotube

NASA Astrophysics Data System (ADS)

Zhang, Zi-Yue; Miao, Chunyang; Guo, Wanlin

2013-11-01

As a fundamental element of a nanoscale passive circuit, a nano-inductor is proposed based on a hetero-nanotube consisting of a spiral carbon strip and a spiral boron nitride strip. It is shown by density functional theory associated with nonequilibrium Green function calculations that the nanotube exhibits attractive transport properties tunable by tube chirality, diameter, component proportion and connection manner between the two strips, with excellent `OFF' state performance and high current on the order of 10-100 μA. All the hetero-nanotubes show negative differential resistance. The transmission peaks of current are absolutely derived from the helicoid carbon strips or C-BN boundaries, giving rise to a spiral current analogous with an energized nano-solenoid. According to Ampere's Law, the energized nano-solenoid can generate a uniform and tremendous magnetic field of more than 1 tesla, closing to that generated by the main magnet of medical nuclear magnetic resonance. Moreover, the magnitude of magnetic field can be easily modulated by bias voltage, providing great promise for a nano-inductor to realize electromagnetic conversion at the nanoscale.As a fundamental element of a nanoscale passive circuit, a nano-inductor is proposed based on a hetero-nanotube consisting of a spiral carbon strip and a spiral boron nitride strip. It is shown by density functional theory associated with nonequilibrium Green function calculations that the nanotube exhibits attractive transport properties tunable by tube chirality, diameter, component proportion and connection manner between the two strips, with excellent `OFF' state performance and high current on the order of 10-100 μA. All the hetero-nanotubes show negative differential resistance. The transmission peaks of current are absolutely derived from the helicoid carbon strips or C-BN boundaries, giving rise to a spiral current analogous with an energized nano-solenoid. According to Ampere's Law, the energized nano

Demonstration of slot-waveguide structures on silicon nitride / silicon oxide platform.

PubMed

Barrios, C A; Sánchez, B; Gylfason, K B; Griol, A; Sohlström, H; Holgado, M; Casquel, R

2007-05-28

We report on the first demonstration of guiding light in vertical slot-waveguides on silicon nitride/silicon oxide material system. Integrated ring resonators and Fabry-Perot cavities have been fabricated and characterized in order to determine optical features of the slot-waveguides. Group index behavior evidences guiding and confinement in the low-index slot region at O-band (1260-1370nm) telecommunication wavelengths. Propagation losses of <20 dB/cm have been measured for the transverse-electric mode of the slot-waveguides.

Mid-infrared polaritonic coupling between boron nitride nanotubes and graphene.

PubMed

Xu, Xiaoji G; Jiang, Jian-Hua; Gilburd, Leonid; Rensing, Rachel G; Burch, Kenneth S; Zhi, Chunyi; Bando, Yoshio; Golberg, Dmitri; Walker, Gilbert C

2014-11-25

Boron nitride (BN) is considered to be a promising substrate for graphene-based devices in part because its large band gap can serve to insulate graphene in layered heterostructures. At mid-infrared frequencies, graphene supports surface plasmon polaritons (SPPs), whereas hexagonal-BN (h-BN) is found to support surface phonon polaritons (SPhPs). We report on the observation of infrared polaritonic coupling between graphene SPPs and boron nitride nanotube (BNNT) SPhPs. Infrared scattering type scanning near-field optical microscopy is used to obtain spatial distribution of the two types of polaritons at the nanoscale. The observation suggests that those polaritons interact at the nanoscale in a one-dimensional/two-dimensional (1D/2D) geometry, exchanging energy in a nonplanar configuration at the nanoscale. Control of the polaritonic interaction is achieved by adjustment of the graphene Fermi level through voltage gating. Our observation suggests that boron nitride nanotubes and graphene can interact at mid-infrared frequencies and coherently exchange their energies at the nanoscale through the overlap of mutual electric near field of surface phonon polaritons and surface plasmon polaritons. Such interaction enables the design of nano-optical devices based on BNNT-graphene polaritonics in the mid-infrared range.

Elastic deformation of helical-conical boron nitride nanotubes

NASA Astrophysics Data System (ADS)

Xu, F. F.; Bando, Y.; Golberg, D.; Ma, R. Z.; Li, Y. B.; Tang, C. C.

2003-08-01

Boron nitride nanotubes with hollow conical-helix geometry have exhibited striking flexibility and elasticity comparable to metals. During an electron-beam induced deformation at room temperature, the nanotubes can be bent by a maximum angle as high as 180° and then retrieve the starting morphology without any evidence of structural failure. The outstanding low-temperature elasticity in this nano-material is interpreted by a theoretical model, displaying deformation processes dominated by slide of filaments along with changes in apex angles stepwise. The specific tubular geometry is believed to take advantages of both high stiffness and extraordinary flexibility of BN filaments, and easiness of interlayer slide in graphitic structure, hence leading to high resistance to fracture.

Ultrahigh interlayer friction in multiwalled boron nitride nanotubes.

PubMed

Niguès, A; Siria, A; Vincent, P; Poncharal, P; Bocquet, L

2014-07-01

Friction at the nanoscale has revealed a wealth of behaviours that depart strongly from the long-standing macroscopic laws of Amontons-Coulomb. Here, by using a 'Christmas cracker'-type of system in which a multiwalled nanotube is torn apart between a quartz-tuning-fork-based atomic force microscope (TF-AFM) and a nanomanipulator, we compare the mechanical response of multiwalled carbon nanotubes (CNTs) and multiwalled boron nitride nanotubes (BNNTs) during the fracture and telescopic sliding of the layers. We found that the interlayer friction for insulating BNNTs results in ultrahigh viscous-like dissipation that is proportional to the contact area, whereas for the semimetallic CNTs the sliding friction vanishes within experimental uncertainty. We ascribe this difference to the ionic character of the BN, which allows charge localization. The interlayer viscous friction of BNNTs suggests that BNNT membranes could serve as extremely efficient shock-absorbing surfaces.

Silicon Carbide Nanotube Oxidation at High Temperatures

NASA Technical Reports Server (NTRS)

Ahlborg, Nadia; Zhu, Dongming

2012-01-01

Silicon Carbide Nanotubes (SiCNTs) have high mechanical strength and also have many potential functional applications. In this study, SiCNTs were investigated for use in strengthening high temperature silicate and oxide materials for high performance ceramic nanocomposites and environmental barrier coating bond coats. The high · temperature oxidation behavior of the nanotubes was of particular interest. The SiCNTs were synthesized by a direct reactive conversion process of multiwall carbon nanotubes and silicon at high temperature. Thermogravimetric analysis (TGA) was used to study the oxidation kinetics of SiCNTs at temperatures ranging from 800degC to1300degC. The specific oxidation mechanisms were also investigated.

Double-walled silicon nanotubes: an ab initio investigation

NASA Astrophysics Data System (ADS)

Lima, Matheus P.

2018-02-01

The synthesis of silicon nanotubes realized in the last decade demonstrates multi-walled tubular structures consisting of Si atoms in {{sp}}2 and the {{sp}}3 hybridizations. However, most of the theoretical models were elaborated taking as the starting point {{sp}}2 structures analogous to carbon nanotubes. These structures are unfavorable due to the natural tendency of the Si atoms to undergo {{sp}}3. In this work, through ab initio simulations based on density functional theory, we investigated double-walled silicon nanotubes proposing layered tubes possessing most of the Si atoms in an {{sp}}3 hybridization, and with few {{sp}}2 atoms localized at the outer wall. The lowest-energy structures have metallic behavior. Furthermore, the possibility to tune the band structure with the application of a strain was demonstrated, inducing a metal-semiconductor transition. Thus, the behavior of silicon nanotubes differs significantly from carbon nanotubes, and the main source of the differences is the distortions in the lattice associated with the tendency of Si to make four chemical bonds.

Feasibility of Actively Cooled Silicon Nitride Airfoil for Turbine Applications Demonstrated

NASA Technical Reports Server (NTRS)

Bhatt, Ramakrishna T.

2001-01-01

Nickel-base superalloys currently limit gas turbine engine performance. Active cooling has extended the temperature range of service of nickel-base superalloys in current gas turbine engines, but the margin for further improvement appears modest. Therefore, significant advancements in materials technology are needed to raise turbine inlet temperatures above 2400 F to increase engine specific thrust and operating efficiency. Because of their low density and high-temperature strength and thermal conductivity, in situ toughened silicon nitride ceramics have received a great deal of attention for cooled structures. However, the high processing costs and low impact resistance of silicon nitride ceramics have proven to be major obstacles for widespread applications. Advanced rapid prototyping technology in combination with conventional gel casting and sintering can reduce high processing costs and may offer an affordable manufacturing approach. Researchers at the NASA Glenn Research Center, in cooperation with a local university and an aerospace company, are developing actively cooled and functionally graded ceramic structures. The objective of this program is to develop cost-effective manufacturing technology and experimental and analytical capabilities for environmentally stable, aerodynamically efficient, foreign-object-damage-resistant, in situ toughened silicon nitride turbine nozzle vanes, and to test these vanes under simulated engine conditions. Starting with computer aided design (CAD) files of an airfoil and a flat plate with internal cooling passages, the permanent and removable mold components for gel casting ceramic slips were made by stereolithography and Sanders machines, respectively. The gel-cast part was dried and sintered to final shape. Several in situ toughened silicon nitride generic airfoils with internal cooling passages have been fabricated. The uncoated and thermal barrier coated airfoils and flat plates were burner rig tested for 30 min without

Devitrification and delayed crazing of SiO2 on single-crystal silicon and chemically vapor-deposited silicon nitride

NASA Technical Reports Server (NTRS)

Choi, Doo Jin; Scott, William D.

1987-01-01

The linear growth rate of cristobalite was measured in thin SiO2 films on silicon and chemically vapor-deposited silicon nitride. The presence of trace impurities from alumina furnace tubes greatly increased the crystal growth rate. Under clean conditions, the growth rate was still 1 order-of-magnitude greater than that for internally nucleated crystals in bulk silica. Crystallized films cracked and lifted from the surface after exposure to atmospheric water vapor. The crystallization and subsequent crazing and lifting of protective SiO2 films on silicon nitride should be considered in long-term applications.

Carbon Nanotubes Embedded in Oriented Polymer Nanofibers by Electrospinning

NASA Astrophysics Data System (ADS)

Cohen, Yachin; Dror, Yael; Khalfin, Rafail L.; Salalha, Wael; Yarin, Alexander L.; Zussman, Eyal

2004-03-01

The electrospinning process was used successfully to fabricate nanofibers of poly(ethylene oxide) [PEO] in which carbon nanotubes, either multi-walled (MWCNT) or single-walled (SWCNT) are embedded. MWCNTs were dispersed in water using SDS or Gum Arabic - a highly branched polyelectrolyte. Aqueous dispersion of SWCNT's was achieved using an alternating copolymer of styrene and maleic anhydride, hydrolyzed with NaOH. The focus of this work is on the development of axial orientations in the multi-component nanofibers. The degree of orientation of polymers, surfactants and nanotubes was studied using X-ray diffraction and transmission electron microscopy. Individual nanotubes were successfully embedded in the polymer nanofibers with good axial alignment. A high degree of alignment of PEO crystals and SDS layers was also found in the electrospun nanofibers containing SWCNT's. Oriented ropes of the nanofibers were fabricated in a converging electric field by a rotating disc with a tapered edge. These results can lead to further usage of the nanofibers with embedded carbon nanotubes in applications such as nano-scale energy storage devices.

Silicon nitride having a high tensile strength

DOEpatents

Pujari, Vimal K.; Tracey, Dennis M.; Foley, Michael R.; Paille, Norman I.; Pelletier, Paul J.; Sales, Lenny C.; Willkens, Craig A.; Yeckley, Russell L.

1996-01-01

A silicon nitride ceramic comprising: a) inclusions no greater than 25 microns in length, b) agglomerates no greater than 20 microns in diameter, and c) a surface finish of less than about 8 microinches, said ceramic having a four-point flexural strength of at least about 900 MPa.

Nanostructured silicon nitride from wheat and rice husks

NASA Astrophysics Data System (ADS)

Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Wollmershauser, J. A.; Feng, C. R.

2016-04-01

Nanoparticles, submicron-diameter tubes, and rods of Si3N4 were synthesized from the thermal treatment of wheat and rice husks at temperatures at and above 1300 °C in a nitrogen atmosphere. The whole pattern Rietveld analysis of the observed diffraction data from treatments at 1300 °C showed the formation of only hexagonal α-phase of Si3N4 with an R-factor of 1%, whereas samples treated at 1400 °C and above showed both α- and β-phases with an R-factor of 2%. Transmission electron microscopy showed the presence of tubes, rods, and nanoparticles of Si3N4. In a two-step process, where pure SiC was produced first from rice or wheat husk in an argon atmosphere and subsequently treated in a nitrogen atmosphere at 1450 °C, a nanostructured composite material having α- and β-phases of Si3N4 combined with cubic phase of SiC was formed. The thermodynamics of the formation of silicon nitride is discussed in terms of the solid state reaction between organic matter (silica content), which is inherently present in the wheat and rice husks, with the nitrogen from the furnace atmosphere. Nanostructures of silicon nitride formed by a single direct reaction or their composites with SiC formed in a two-step process of agricultural byproducts provide an uncomplicated sustainable synthesis route for silicon nitride used in mechanical, biotechnology, and electro-optic nanotechnology applications.

Multibit Polycristalline Silicon-Oxide-Silicon Nitride-Oxide-Silicon Memory Cells with High Density Designed Utilizing a Separated Control Gate

NASA Astrophysics Data System (ADS)

Rok Kim, Kyeong; You, Joo Hyung; Dal Kwack, Kae; Kim, Tae Whan

2010-10-01

Unique multibit NAND polycrystalline silicon-oxide-silicon nitride-oxide-silicon (SONOS) memory cells utilizing a separated control gate (SCG) were designed to increase memory density. The proposed NAND SONOS memory device based on a SCG structure was operated as two bits, resulting in an increase in the storage density of the NVM devices in comparison with conventional single-bit memories. The electrical properties of the SONOS memory cells with a SCG were investigated to clarify the charging effects in the SONOS memory cells. When the program voltage was supplied to each gate of the NAND SONOS flash memory cells, the electrons were trapped in the nitride region of the oxide-nitride-oxide layer under the gate to supply the program voltage. The electrons were accumulated without affecting the other gate during the programming operation, indicating the absence of cross-talk between two trap charge regions. It is expected that the inference effect will be suppressed by the lower program voltage than the program voltage of the conventional NAND flash memory. The simulation results indicate that the proposed unique NAND SONOS memory cells with a SCG can be used to increase memory density.

Theoretical studies of urea adsorption on single wall boron-nitride nanotubes

NASA Astrophysics Data System (ADS)

Chermahini, Alireza Najafi; Teimouri, Abbas; Farrokhpour, Hossein

2014-11-01

Surface modification of a boron nitride nanotube (BNNT) with urea molecule was investigated in terms of its energetic, geometric, and electronic properties using B3LYP and PW91 density functionals. In this investigation, various armchair (n,n) nanotubes, where n = 5, 6, 7 have been used. Two different interaction modes, including interaction with outer layer and inner layer of tube were studied. The results indicated that the adsorption of single urea molecule in all of its configurations is observed to be exothermic and physical in nature. Interestingly, the adsorption energy for the most stable configuration of urea was observed when the molecule located inside of the nanotube. Besides, the adsorption of urea on BNNTs changes the conductivity of nanotube.

Characterization of Reaction Sintered Silicon Nitride Radomes

DTIC Science & Technology

1977-10-01

A. Ossin , "A Three Dtraenslonal Stress Analysis on the Effects of a Laser Induced Local Hot Spot on a Silicon Nitride Shell, " Martin Marietta...not stated by Ossin , et al, these boundary conditions are extremes and bracket the realistic case. ** In cases where only a few large flaws limit

Reaction bonded silicon nitride prepared from wet attrition-milled silicon

NASA Technical Reports Server (NTRS)

Herbell, T. P.; Glasgow, T. K.; Shaw, N. J.

1980-01-01

Silicon powder wet milled in heptane was dried, compacted into test bar shape, helium-sintered, and then reaction bonded in nitrogen-4 vol% hydrogen. As-nitrided bend strengths averaged approximately 290 MPa at both room temperature and 1400 C. Fracture initiation appeared to be associated with subsurface flaws in high-strength specimens and both subsurface and surface flaws in low-strength specimens.

In Situ Formation of Carbon Nanotubes Encapsulated within Boron Nitride Nanotubes via Electron Irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arenal, Raul; Lopez-Bezanilla, Alejandro

2014-07-25

We report experimental evidence of the formation by in situ electron-irradiation of single-walled carbon nanotubes (C NT) confined within boron nitride nanotubes (BN-NT). The electron radiation stemming from the microscope supplies the energy required by the amorphous carbonaceous structures to crystallize in a tubular form in a catalyst free procedure, at room temperature and high vacuum. The structural defects resulting from the interaction of the shapeless carbon with the BN nanotube are corrected in a self-healing process throughout the crystallinization. Structural changes developed during the irradiation process such as defects formation and evolution, shrinkage, and shortness of the BN-NT weremore » in situ monitored. The outer BN wall provides a protective and insulating shell against environmental Perturbations to the inner C-NT without affecting their electronic properties, as demonstrated by first principles calculations.« less

Cobalt-embedded nitrogen-rich carbon nanotubes efficiently catalyze hydrogen evolution reaction at all pH values.

PubMed

Zou, Xiaoxin; Huang, Xiaoxi; Goswami, Anandarup; Silva, Rafael; Sathe, Bhaskar R; Mikmeková, Eliška; Asefa, Tewodros

2014-04-22

Despite being technically possible, splitting water to generate hydrogen is still practically unfeasible due mainly to the lack of sustainable and efficient catalysts for the half reactions involved. Herein we report the synthesis of cobalt-embedded nitrogen-rich carbon nanotubes (NRCNTs) that 1) can efficiently electrocatalyze the hydrogen evolution reaction (HER) with activities close to that of Pt and 2) function well under acidic, neutral or basic media alike, allowing them to be coupled with the best available oxygen-evolving catalysts-which also play crucial roles in the overall water-splitting reaction. The materials are synthesized by a simple, easily scalable synthetic route involving thermal treatment of Co(2+) -embedded graphitic carbon nitride derived from inexpensive starting materials (dicyandiamide and CoCl2 ). The materials' efficient catalytic activity is mainly attributed to their nitrogen dopants and concomitant structural defects. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C

NASA Technical Reports Server (NTRS)

Miyoshi, K.; Pouch, J. J.; Alterovitz, S. A.; Pantic, D. M.; Johnson, G. A.

1988-01-01

The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.

Features of the phase composition and morphology of the particles of sialon synthesized from silicon and aluminum nitrides

NASA Astrophysics Data System (ADS)

Ivicheva, S. N.; Lysenkov, A. S.; Ovsyannikov, N. A.; Titov, D. D.; Kargin, Yu F.

2018-04-01

The phase composition and morphological features of sialons were studied under the same conditions of firing (duration, temperature) using different initial components, silicon nitride, aluminum nitride, and a mixture of silicon nitrides and aluminum with the application of nitrides of the corresponding oxide (aluminum or silicon) sol-gel method. The effect of the initial reagents composition on the phase composition of the final product and the morphological features of the sialon powders obtained in a single firing step in a nitrogen atmosphere is shown.

Silicon nitride having a high tensile strength

DOEpatents

Pujari, V.K.; Tracey, D.M.; Foley, M.R.; Paille, N.I.; Pelletier, P.J.; Sales, L.C.; Willkens, C.A.; Yeckley, R.L.

1996-11-05

A silicon nitride ceramic is disclosed comprising: (a) inclusions no greater than 25 microns in length, (b) agglomerates no greater than 20 microns in diameter, and (c) a surface finish of less than about 8 microinches, said ceramic having a four-point flexural strength of at least about 900 MPa. 4 figs.

Development of a continuous spinning process for producing silicon carbide - silicon nitride precursor fibers

NASA Technical Reports Server (NTRS)

1985-01-01

An apparatus was designed for the continuous production of silicon carbide - silicon nitride precursor fibers. The precursor polymer can be fiberized, crosslined and pyrolyzed. The product is a metallic black fiber with the composition of the type C sub x Si sub y n sub z. Little, other than the tensile strength and modulus of elasticity, is known of the physical properties.

Evaluation of boron nitride nanotubes and hexagonal boron nitrides as nanocarriers for cancer drugs.

PubMed

Emanet, Melis; Şen, Özlem; Çulha, Mustafa

2017-04-01

Boron nitride nanotubes (BNNTs) and hexagonal boron nitrides (hBNs) are novel nanostructures with high mechanical strengths, large surface areas and excellent biocompatibilities. Here, the potential use of BNNTs and hBNs as nanocarriers was comparatively investigated for use with cancer drugs. Doxorubicin (Dox) and folate are used as model drugs and targeting agents, respectively. The obtained results indicate that BNNTs have about a threefold higher Dox loading capacity than hBNs. It was also found that cellular uptake of folate-Dox-BNNTs was much higher when compared with Dox-BNNTs for HeLa cells, due to the presence of folate receptors on the cell surface, leading to increased cancer cell death. In summary, folate and Dox conjugated BNNTs are promising agents in nanomedicine and may have potential drug delivery applications.

Processing study of injection molding of silicon nitride for engine applications

NASA Technical Reports Server (NTRS)

Rorabaugh, M. E.; Yeh, H. C.

1985-01-01

The high hardness of silicon nitride, which is currently under consideration as a structural material for such hot engine components as turbine blades, renders machining of the material prohibitively costly; the near net shape forming technique of injection molding is accordingly favored as a means for component fabrication. Attention is presently given to the relationships between injection molding processing parameters and the resulting microstructural and mechanical properties of the resulting engine parts. An experimental program has been conducted under NASA sponsorship which tests the quality of injection molded bars of silicon nitride at various stages of processing.

Rolling-element fatigue life of silicon nitride balls. [as compared to that of steel, ceramic, and cermet materials

NASA Technical Reports Server (NTRS)

Parker, R. J.; Zaretsky, E. V.

1974-01-01

The five-ball fatigue tester was used to evaluate silicon nitride as a rolling-element bearing material. Results indicate that hot-pressed silicon nitride running against steel may be expected to yield fatigue lives comparable to or greater than those of bearing quality steel running against steel at stress levels typical rolling-element bearing application. The fatigue life of hot-pressed silicon nitride is considerably greater than that of any ceramic or cermet tested. Computer analysis indicates that there is no improvement in the lives of 120-mm-bore angular--contact ball bearings of the same geometry operating at DN values from 2 to 4 million where hot-pressed silicon nitride balls are used in place of steel balls.

Carbon nanotube, graphene and boron nitride nanotube reinforced bioactive ceramics for bone repair.

PubMed

Gao, Chengde; Feng, Pei; Peng, Shuping; Shuai, Cijun

2017-10-01

The high brittleness and low strength of bioactive ceramics have severely restricted their application in bone repair despite the fact that they have been regarded as one of the most promising biomaterials. In the last few years, low-dimensional nanomaterials (LDNs), including carbon nanotubes, graphene and boron nitride nanotubes, have gained increasing attention owing to their favorable biocompatibility, large surface specific area and super mechanical properties. These qualities make LDNs potential nanofillers in reinforcing bioactive ceramics. In this review, the types, characteristics and applications of the commonly used LDNs in ceramic composites are summarized. In addition, the fabrication methods for LDNs/ceramic composites, such as hot pressing, spark plasma sintering and selective laser sintering, are systematically reviewed and compared. Emphases are placed on how to obtain the uniform dispersion of LDNs in a ceramic matrix and maintain the structural stability of LDNs during the high-temperature fabrication process of ceramics. The reinforcing mechanisms of LDNs in ceramic composites are then discussed in-depth. The in vitro and in vivo studies of LDNs/ceramic in bone repair are also summarized and discussed. Finally, new developments and potential applications of LDNs/ceramic composites are further discussed with reference to experimental and theoretical studies. Despite bioactive ceramics having been regarded as promising biomaterials, their high brittleness and low strength severely restrict their application in bone scaffolds. In recent years, low-dimensional nanomaterials (LDNs), including carbon nanotubes, graphene and boron nitride nanotubes, have shown great potential in reinforcing bioactive ceramics owing to their unique structures and properties. However, so far it has been difficult to maintain the structural stability of LDNs during fabrication of LDNs/ceramic composites, due to the lengthy, high-temperature process involved. This review

Wireless and embedded carbon nanotube networks for damage detection in concrete structures

NASA Astrophysics Data System (ADS)

Saafi, Mohamed

2009-09-01

Concrete structures undergo an uncontrollable damage process manifesting in the form of cracks due to the coupling of fatigue loading and environmental effects. In order to achieve long-term durability and performance, continuous health monitoring systems are needed to make critical decisions regarding operation, maintenance and repairs. Recent advances in nanostructured materials such as carbon nanotubes have opened the door for new smart and advanced sensing materials that could effectively be used in health monitoring of structures where wireless and real time sensing could provide information on damage development. In this paper, carbon nanotube networks were embedded into a cement matrix to develop an in situ wireless and embedded sensor for damage detection in concrete structures. By wirelessly measuring the change in the electrical resistance of the carbon nanotube networks, the progress of damage can be detected and monitored. As a proof of concept, wireless cement-carbon nanotube sensors were embedded into concrete beams and subjected to monotonic and cyclic loading to evaluate the effect of damage on their response. Experimental results showed that the wireless response of the embedded nanotube sensors changes due to the formation of cracks during loading. In addition, the nanotube sensors were able to detect the initiation of damage at an early stage of loading.

Dry Lubrication of High Temperature Silicon Nitride Rolling Contacts.

DTIC Science & Technology

1980-11-01

comparable to M50 bearing steel [2]. Quality control measures were implemented in the areas of raw material inspection as well as non-destructive evaluation...to oil lubricated bearing steels . Due to the apparent success of graphite at high tem- perature, three vendors were selected that manufacture graph...hybrid bearings ( steel rings and silicon nitride balls) to establish solid lubricant/cage design practices. High temperature bearing tests with silicon

Crystal growth in supercritical ammonia using high surface area silicon nitride feedstock

NASA Astrophysics Data System (ADS)

Kaskel, Stefan; Khanna, Meikh; Zibrowius, Bodo; Schmidt, Hans-Werner; Ullner, Dirk

2004-01-01

The use of amorphous high surface area silicon nitride is proposed as a raw material for crystallization experiments in supercritical ammonia. Compared with earlier studies, the use of highly dispersed solids results in the crystallization of inorganic nitrides under relatively mild conditions (673 K). Mineralizers such as amides (LiNH 2, NaNH 2, KNH 2) are found to be effective crystallization aids. The crystalline products, detected using powder X-ray diffraction, are either MSi 2N 3 (M=Li, Na) or Si 2N 2NH. Si 2N 2NH is also characterized using 29Si MAS NMR. The spectrum shows a narrow line located at -44.7 ppm, whereas for amorphous silicon nitride-based materials the line is broad. The ammonothermal reaction of NaAl(NH 2) 4 and high surface area silicon nitride at 673 K affords a new orthorhombic phase, isostructural with NaSi 2N 3, but with extended lattice constants ( a=9.634, b=5.643, c=5.011 Å). Effective crystallization is also achieved using fluoride mineralizers (KF, CsF) at 673 K. A new small scale autoclave, suitable for laboratory syntheses at temperatures up to 873 K, is presented that can be loaded under inert gas.

Reaction bonded silicon nitride prepared from wet attrition-milled silicon. [fractography

NASA Technical Reports Server (NTRS)

Herball, T. P.; Glasgow, T. K.; Shaw, N. J.

1980-01-01

Silicon powder wet milled in heptane was dried, compacted into test bar shape, helium-sintered, and then reaction bonded in nitrogen-4 volume percent hydrogen. As-nitrided bend strengths averaged approximately 290 MPa at both room temperature and 1400 C. Fracture initiation appeared to be associated with subsurface flaws in high strength specimens and both subsurface and surface flaws in low strength specimens.

Adsorption of cyanogen chloride on the surface of boron nitride nanotubes for CNCl sensing

NASA Astrophysics Data System (ADS)

Movlarooy, Tayebeh; Fadradi, Mahboobeh Amiri

2018-05-01

The adsorption of CNCl gas, on the surface of boron nitride nanotubes in pure form, as well as doped with Al and Ga, based on the density functional theory (DFT) has been studied. The electron and structural properties of pristine and doped nanotubes have been investigated. By calculating the adsorption energy, the most stable positions and the equilibrium distance are obtained, and charge transferred and electronic properties have been calculated. The most stable molecule adsorption position for pure nanotube is obtained at the center of the hexagon and for doped nanotube above the impurity atom from N side.

Slip casting and nitridation of silicon powder

NASA Technical Reports Server (NTRS)

Seiko, Y.

1985-01-01

Powdered Silicon was slip-cast with a CaSO4 x 0.5H2O mold and nitrided in a N atm. containing 0 or 5 vol. % H at 1000 to 1420 deg. To remove the castings, the modeling faces were coated successively with an aq. salt soap and powdered cellulose containing Na alginate, and thus prevented the sticking problem.

Apparatus for silicon nitride precursor solids recovery

DOEpatents

Crosbie, Gary M.; Predmesky, Ronald L.; Nicholson, John M.

1995-04-04

Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

Method for silicon nitride precursor solids recovery

DOEpatents

Crosbie, Gary M.; Predmesky, Ronald L.; Nicholson, John M.

1992-12-15

Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

Alginic Acid-Aided Dispersion of Carbon Nanotubes, Graphene, and Boron Nitride Nanomaterials for Microbial Toxicity Testing

PubMed Central

Chang, Chong Hyun

2018-01-01

Robust evaluation of potential environmental and health risks of carbonaceous and boron nitride nanomaterials (NMs) is imperative. However, significant agglomeration of pristine carbonaceous and boron nitride NMs due to strong van der Waals forces renders them not suitable for direct toxicity testing in aqueous media. Here, the natural polysaccharide alginic acid (AA) was used as a nontoxic, environmentally relevant dispersant with defined composition to disperse seven types of carbonaceous and boron nitride NMs, including multiwall carbon nanotubes, graphene, boron nitride nanotubes, and hexagonal boron nitride flakes, with various physicochemical characteristics. AA’s biocompatibility was confirmed by examining AA effects on viability and growth of two model microorganisms (the protozoan Tetrahymena thermophila and the bacterium Pseudomonas aeruginosa). Using 400 mg·L−1 AA, comparably stable NM (200 mg·L−1) stock dispersions were obtained by 30-min probe ultrasonication. AA non-covalently interacted with NM surfaces and improved the dispersibility of NMs in water. The dispersion stability varied with NM morphology and size rather than chemistry. The optimized dispersion protocol established here can facilitate preparing homogeneous NM dispersions for reliable exposures during microbial toxicity testing, contributing to improved reproducibility of toxicity results. PMID:29385723

Alginic Acid-Aided Dispersion of Carbon Nanotubes, Graphene, and Boron Nitride Nanomaterials for Microbial Toxicity Testing.

PubMed

Wang, Ying; Mortimer, Monika; Chang, Chong Hyun; Holden, Patricia A

2018-01-30

Robust evaluation of potential environmental and health risks of carbonaceous and boron nitride nanomaterials (NMs) is imperative. However, significant agglomeration of pristine carbonaceous and boron nitride NMs due to strong van der Waals forces renders them not suitable for direct toxicity testing in aqueous media. Here, the natural polysaccharide alginic acid (AA) was used as a nontoxic, environmentally relevant dispersant with defined composition to disperse seven types of carbonaceous and boron nitride NMs, including multiwall carbon nanotubes, graphene, boron nitride nanotubes, and hexagonal boron nitride flakes, with various physicochemical characteristics. AA's biocompatibility was confirmed by examining AA effects on viability and growth of two model microorganisms (the protozoan Tetrahymena thermophila and the bacterium Pseudomonas aeruginosa ). Using 400 mg·L -1 AA, comparably stable NM (200 mg·L -1 ) stock dispersions were obtained by 30-min probe ultrasonication. AA non-covalently interacted with NM surfaces and improved the dispersibility of NMs in water. The dispersion stability varied with NM morphology and size rather than chemistry. The optimized dispersion protocol established here can facilitate preparing homogeneous NM dispersions for reliable exposures during microbial toxicity testing, contributing to improved reproducibility of toxicity results.

Effect of processing parameters on reaction bonding of silicon nitride

NASA Technical Reports Server (NTRS)

Richman, M. H.; Gregory, O. J.; Magida, M. B.

1980-01-01

Reaction bonded silicon nitride was developed. The relationship between the various processing parameters and the resulting microstructures was to design and synthesize reaction bonded materials with improved room temperature mechanical properties.

Antifuse with a single silicon-rich silicon nitride insulating layer

DOEpatents

Habermehl, Scott D.; Apodaca, Roger T.

2013-01-22

An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

Dissolution and Characterization of Boron Nitride Nanotubes in Superacid.

PubMed

Kleinerman, Olga; Adnan, Mohammed; Marincel, Daniel M; Ma, Anson W K; Bengio, E Amram; Park, Cheol; Chu, Sang-Hyon; Pasquali, Matteo; Talmon, Yeshayahu

2017-12-19

Boron nitride nanotubes (BNNTs) are of interest for their unique combination of high tensile strength, high electrical resistivity, high neutron cross section, and low reactivity. The fastest route to employing these properties in composites and macroscopic articles is through solution processing. However, dispersing BNNTs without functionalization or use of a surfactant is challenging. We show here by cryogenic transmission electron microscopy that BNNTs spontaneously dissolve in chlorosulfonic acid as disentangled individual molecules. Electron energy loss spectroscopy of BNNTs dried from the solution confirms preservation of the sp 2 hybridization for boron and nitrogen, eliminating the possibility of BNNT functionalization or damage. The length and diameter of the BNNTs was statistically calculated to be ∼4.5 μm and ∼4 nm, respectively. Interestingly, bent or otherwise damaged BNNTs are filled by chlorosulfonic acid. Additionally, nanometer-sized synthesis byproducts, including boron nitride clusters, isolated single and multilayer hexagonal boron nitride, and boron particles, were identified. Dissolution in superacid provides a route for solution processing BNNTs without altering their chemical structure.

The effect of dry shear aligning of nanotube thin films on the photovoltaic performance of carbon nanotube-silicon solar cells.

PubMed

Stolz, Benedikt W; Tune, Daniel D; Flavel, Benjamin S

2016-01-01

Recent results in the field of carbon nanotube-silicon solar cells have suggested that the best performance is obtained when the nanotube film provides good coverage of the silicon surface and when the nanotubes in the film are aligned parallel to the surface. The recently developed process of dry shear aligning - in which shear force is applied to the surface of carbon nanotube thin films in the dry state, has been shown to yield nanotube films that are very flat and in which the surface nanotubes are very well aligned in the direction of shear. It is thus reasonable to expect that nanotube films subjected to dry shear aligning should outperform otherwise identical films formed by other processes. In this work, the fabrication and characterisation of carbon nanotube-silicon solar cells using such films is reported, and the photovoltaic performance of devices produced with and without dry shear aligning is compared.

Marine fouling release silicone/carbon nanotube nanocomposite coatings: on the importance of the nanotube dispersion state.

PubMed

Beigbeder, Alexandre; Mincheva, Rosica; Pettitt, Michala E; Callow, Maureen E; Callow, James A; Claes, Michael; Dubois, Philippe

2010-05-01

The present work reports on the influence of the dispersion quality of multiwall carbon nanotubes (MWCNTs) in a silicone matrix on the marine fouling-release performance of the resulting nanocomposite coatings. A first set of coatings filled with different nanofiller contents was prepared by the dilution of a silicone/MWCNTs masterbatch within a hydrosilylation-curing polydimethylsiloxane resin. The fouling-release properties of the nanocomposite coatings were studied through laboratory assays with the marine alga (seaweed) Ulva, a common fouling species. As reported previously (see Ref. [19]), the addition of a small (0.05%) amount of carbon nanotubes substantially improves the fouling-release properties of the silicone matrix. This paper shows that this improvement is dependent on the amount of filler, with a maximum obtained with 0.1 wt% of multiwall carbon nanotubes (MWCNTs). The method of dispersion of carbon nanotubes in the silicone matrix is also shown to significantly (p = 0.05) influence the fouling-release properties of the coatings. Dispersing 0.1% MWCNTs using the masterbatch approach yielded coatings with circa 40% improved fouling-release properties over those where MWCNTs were dispersed directly in the polymeric matrix. This improvement is directly related to the state of nanofiller dispersion within the cross-linked silicone coating.

Oxidative Unzipping and Transformation of High Aspect Ratio Boron Nitride Nanotubes into “White Graphene Oxide” Platelets

PubMed Central

Nautiyal, Pranjal; Loganathan, Archana; Agrawal, Richa; Boesl, Benjamin; Wang, Chunlei; Agarwal, Arvind

2016-01-01

Morphological and chemical transformations in boron nitride nanotubes under high temperature atmospheric conditions is probed in this study. We report atmospheric oxygen induced cleavage of boron nitride nanotubes at temperatures exceeding 750 °C for the first time. Unzipping is then followed by coalescence of these densely clustered multiple uncurled ribbons to form stacks of 2D sheets. FTIR and EDS analysis suggest these 2D platelets to be Boron Nitride Oxide platelets, with analogous structure to Graphene Oxide, and therefore we term them as “White Graphene Oxide” (WGO). However, not all BNNTs deteriorate even at temperatures as high as 1000 °C. This leads to the formation of a hybrid nanomaterial system comprising of 1D BN nanotubes and 2D BN oxide platelets, potentially having advanced high temperature sensing, radiation shielding, mechanical strengthening, electron emission and thermal management applications due to synergistic improvement of multi-plane transport and mechanical properties. This is the first report on transformation of BNNT bundles to a continuous array of White Graphene Oxide nanoplatelet stacks. PMID:27388704

Oxidative Unzipping and Transformation of High Aspect Ratio Boron Nitride Nanotubes into “White Graphene Oxide” Platelets

NASA Astrophysics Data System (ADS)

Nautiyal, Pranjal; Loganathan, Archana; Agrawal, Richa; Boesl, Benjamin; Wang, Chunlei; Agarwal, Arvind

2016-07-01

Morphological and chemical transformations in boron nitride nanotubes under high temperature atmospheric conditions is probed in this study. We report atmospheric oxygen induced cleavage of boron nitride nanotubes at temperatures exceeding 750 °C for the first time. Unzipping is then followed by coalescence of these densely clustered multiple uncurled ribbons to form stacks of 2D sheets. FTIR and EDS analysis suggest these 2D platelets to be Boron Nitride Oxide platelets, with analogous structure to Graphene Oxide, and therefore we term them as “White Graphene Oxide” (WGO). However, not all BNNTs deteriorate even at temperatures as high as 1000 °C. This leads to the formation of a hybrid nanomaterial system comprising of 1D BN nanotubes and 2D BN oxide platelets, potentially having advanced high temperature sensing, radiation shielding, mechanical strengthening, electron emission and thermal management applications due to synergistic improvement of multi-plane transport and mechanical properties. This is the first report on transformation of BNNT bundles to a continuous array of White Graphene Oxide nanoplatelet stacks.

Silicon Nitride Antireflection Coatings for Photovoltaic Cells

NASA Technical Reports Server (NTRS)

Johnson, C.; Wydeven, T.; Donohoe, K.

1984-01-01

Chemical-vapor deposition adapted to yield graded index of refraction. Silicon nitride deposited in layers, refractive index of which decreases with distance away from cell/coating interface. Changing index of refraction allows adjustment of spectral transmittance for wavelengths which cell is most effective at converting light to electric current. Average conversion efficiency of solar cells increased from 8.84 percent to 12.63 percent.

Power mixture and green body for producing silicon nitride base articles of high fracture toughness and strength

DOEpatents

Huckabee, M.L.; Buljan, S.T.; Neil, J.T.

1991-09-17

A powder mixture and a green body for producing a silicon nitride-based article of improved fracture toughness and strength are disclosed. The powder mixture includes (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12m[sup 2]g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. The green body is formed from the powder mixture, an effective amount of a suitable oxide densification aid, and an effective amount of a suitable organic binder. No Drawings

Measurement of the Elastic Modulus of a Single Boron Nitride Nanotube

NASA Astrophysics Data System (ADS)

Chopra, Nasreen G.; Cohen, Marvin L.; Louie, Steven G.; Zettl, A.

1997-03-01

In situ transmission electron microscope (TEM) measurements of thermally-excited vibrational characteristics of boron nitride (BN) nanotubes are used to extract the elastic modulus. We find BN nanotubes to have a higher axial Young's modulus, 1.2 TPa, than any other insulating fiber. This value is consistent with theoretical predictions and confirms previous TEM observations of the high degree of crystallinity of these structures. This work was supported by the U. S. Department of Energy under contract No. DE-AC03-76-SF00098 and the Office of Naval Research, Order No. N00014-95-F-0099

Giant osmotic energy conversion measured in a single transmembrane boron nitride nanotube.

PubMed

Siria, Alessandro; Poncharal, Philippe; Biance, Anne-Laure; Fulcrand, Rémy; Blase, Xavier; Purcell, Stephen T; Bocquet, Lydéric

2013-02-28

New models of fluid transport are expected to emerge from the confinement of liquids at the nanoscale, with potential applications in ultrafiltration, desalination and energy conversion. Nevertheless, advancing our fundamental understanding of fluid transport on the smallest scales requires mass and ion dynamics to be ultimately characterized across an individual channel to avoid averaging over many pores. A major challenge for nanofluidics thus lies in building distinct and well-controlled nanochannels, amenable to the systematic exploration of their properties. Here we describe the fabrication and use of a hierarchical nanofluidic device made of a boron nitride nanotube that pierces an ultrathin membrane and connects two fluid reservoirs. Such a transmembrane geometry allows the detailed study of fluidic transport through a single nanotube under diverse forces, including electric fields, pressure drops and chemical gradients. Using this device, we discover very large, osmotically induced electric currents generated by salinity gradients, exceeding by two orders of magnitude their pressure-driven counterpart. We show that this result originates in the anomalously high surface charge carried by the nanotube's internal surface in water at large pH, which we independently quantify in conductance measurements. The nano-assembly route using nanostructures as building blocks opens the way to studying fluid, ionic and molecule transport on the nanoscale, and may lead to biomimetic functionalities. Our results furthermore suggest that boron nitride nanotubes could be used as membranes for osmotic power harvesting under salinity gradients.

Structure analysis of aluminium silicon manganese nitride precipitates formed in grain-oriented electrical steels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bernier, Nicolas, E-mail: n.bernier@yahoo.fr; Xhoffer, Chris; Van De Putte, Tom, E-mail: tom.vandeputte@arcelormittal.com

We report a detailed structural and chemical characterisation of aluminium silicon manganese nitrides that act as grain growth inhibitors in industrially processed grain-oriented (GO) electrical steels. The compounds are characterised using energy dispersive X-ray spectrometry (EDX) and energy filtered transmission electron microscopy (EFTEM), while their crystal structures are analysed using X-ray diffraction (XRD) and TEM in electron diffraction (ED), dark-field, high-resolution and automated crystallographic orientation mapping (ACOM) modes. The chemical bonding character is determined using electron energy loss spectroscopy (EELS). Despite the wide variation in composition, all the precipitates exhibit a hexagonal close-packed (h.c.p.) crystal structure and lattice parameters ofmore » aluminium nitride. The EDX measurement of ∼ 900 stoichiometrically different precipitates indicates intermediate structures between pure aluminium nitride and pure silicon manganese nitride, with a constant Si/Mn atomic ratio of ∼ 4. It is demonstrated that aluminium and silicon are interchangeably precipitated with the same local arrangement, while both Mn{sup 2+} and Mn{sup 3+} are incorporated in the h.c.p. silicon nitride interstitial sites. The oxidation of the silicon manganese nitrides most likely originates from the incorporation of oxygen during the decarburisation annealing process, thus creating extended planar defects such as stacking faults and inversion domain boundaries. The chemical composition of the inhibitors may be written as (AlN){sub x}(SiMn{sub 0.25}N{sub y}O{sub z}){sub 1−x} with x ranging from 0 to 1. - Highlights: • We study the structure of (Al,Si,Mn)N inhibitors in grain oriented electrical steels. • Inhibitors have the hexagonal close-packed symmetry with lattice parameters of AlN. • Inhibitors are intermediate structures between pure AlN and (Si,Mn)N with Si/Mn ∼ 4. • Al and Si share the same local arrangement; Mn is incorporated in

Silicon Carbide Nanotube Synthesized

NASA Technical Reports Server (NTRS)

Lienhard, Michael A.; Larkin, David J.

2003-01-01

Carbon nanotubes (CNTs) have generated a great deal of scientific and commercial interest because of the countless envisioned applications that stem from their extraordinary materials properties. Included among these properties are high mechanical strength (tensile and modulus), high thermal conductivity, and electrical properties that make different forms of single-walled CNTs either conducting or semiconducting, and therefore, suitable for making ultraminiature, high-performance CNT-based electronics, sensors, and actuators. Among the limitations for CNTs is their inability to survive in high-temperature, harsh-environment applications. Silicon carbon nanotubes (SiCNTs) are being developed for their superior material properties under such conditions. For example, SiC is stable in regards to oxidation in air to temperatures exceeding 1000 C, whereas carbon-based materials are limited to 600 C. The high-temperature stability of SiCNTs is envisioned to enable high-temperature, harsh-environment nanofiber- and nanotube-reinforced ceramics. In addition, single-crystal SiC-based semiconductors are being developed for hightemperature, high-power electronics, and by analogy to CNTs with silicon semiconductors, SiCNTs with single-crystal SiC-based semiconductors may allow high-temperature harsh-environment nanoelectronics, nanosensors, and nanoactuators to be realized. Another challenge in CNT development is the difficulty of chemically modifying the tube walls, which are composed of chemically stable graphene sheets. The chemical substitution of the CNTs walls will be necessary for nanotube self-assembly and biological- and chemical-sensing applications. SiCNTs are expected to have a different multiple-bilayer wall structure, allowing the surface Si atoms to be functionalized readily with molecules that will allow SiCNTs to undergo self-assembly and be compatible with a variety of materials (for biotechnology applications and high-performance fiber-reinforced ceramics).

Hafnium nitride buffer layers for growth of GaN on silicon

DOEpatents

Armitage, Robert D.; Weber, Eicke R.

2005-08-16

Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

Highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles

NASA Astrophysics Data System (ADS)

Huang, Yuewang; Zhao, Qiancheng; Sharac, Nicholas; Ragan, Regina; Boyraz, Ozdal

2015-05-01

We demonstrate the fabrication of a highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles for plasmonic enhancement. The average enhancement effect is evaluated by measuring the spectral broadening effect caused by self-phase-modulation. The nonlinear refractive index n2 was measured to be 7.0917×10-19 m2/W for a waveguide whose Wopen is 5 μm. Several waveguides at different locations on one wafer were measured in order to take the randomness of the nanoparticle distribution into consideration. The largest enhancement is measured to be as high as 10 times. Fabrication of this waveguide started with a MEMS grade photomask. By using conventional optical lithography, the wide linewidth was transferred to a <100> wafer. Then the wafer was etched anisotropically by potassium hydroxide (KOH) to engrave trapezoidal trenches with an angle of 54.7º. Side wall roughness was mitigated by KOH etching and thermal oxidation that was used to generate a buffer layer for silicon nitride waveguide. The guiding material silicon nitride was then deposited by low pressure chemical vapor deposition. The waveguide was then patterned with a chemical template, with 20 nm gold particles being chemically attached to the functionalized poly(methyl methacrylate) domains. Since the particles attached only to the PMMA domains, they were confined to localized regions, therefore forcing the nanoparticles into clusters of various numbers and geometries. Experiments reveal that the waveguide has negligible nonlinear absorption loss, and its nonlinear refractive index can be greatly enhanced by gold nano clusters. The silicon nitride trench waveguide has large nonlinear refractive index, rendering itself promising for nonlinear applications.

Nonlinear conductivity in silicon nitride

NASA Astrophysics Data System (ADS)

Tuncer, Enis

2017-08-01

To better comprehend electrical silicon-package interaction in high voltage applications requires full characterization of the electrical properties of dielectric materials employed in wafer and package level design. Not only the packaging but wafer level dielectrics, i.e. passivation layers, would experience high electric fields generated by the voltage applied pads. In addition the interface between the passivation layer and a mold compound might develop space charge because of the mismatch in electrical properties of the materials. In this contribution electrical properties of a thin silicon nitride (Si3N4) dielectric is reported as a function of temperature and electric field. The measured values later analyzed using different temperature dependent exponential expressions and found that the Mott variable range hopping conduction model was successful to express the data. A full temperature/electric field dependency of conductivity is generated. It was found that the conduction in Si3N4 could be expressed like a field ionization or Fowler-Nordheim mechanism.

A computational NMR study on zigzag aluminum nitride nanotubes

NASA Astrophysics Data System (ADS)

Bodaghi, Ali; Mirzaei, Mahmoud; Seif, Ahmad; Giahi, Masoud

2008-12-01

A computational nuclear magnetic resonance (NMR) study is performed to investigate the electronic structure properties of the single-walled zigzag aluminum nitride nanotubes (AlNNTs). The chemical-shielding (CS) tensors are calculated at the sites of Al-27 and N-15 nuclei in three structural forms of AlNNT including H-saturated, Al-terminated, and N-terminated ones. The structural forms are firstly optimized and then the calculated CS tensors in the optimized structures are converted to chemical-shielding isotropic (CSI) and chemical-shielding anisotropic (CSA) parameters. The calculated parameters reveal that various Al-27 and N-15 nuclei are divided into some layers with equivalent electrostatic properties; furthermore, Al and N can act as Lewis base and acid, respectively. In the Al-terminated and N-terminated forms of AlNNT, in which one mouth of the nanotube is terminated by aluminum and nitrogen nuclei, respectively, just the CS tensors of the nearest nuclei to the mouth of the nanotube are significantly changed due to removal of saturating hydrogen atoms. Density functional theory (DFT) calculations are performed using GAUSSIAN 98 package of program.

Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions

NASA Astrophysics Data System (ADS)

Petrov, Yu. V.; Anikeva, A. E.; Vyvenko, O. F.

2018-06-01

Secondary electron emission from thin silicon nitride films of different thicknesses on silicon excited by helium ions with energies from 15 to 35 keV was investigated in the helium ion microscope. Secondary electron yield measured with Everhart-Thornley detector decreased with the irradiation time because of the charging of insulating films tending to zero or reaching a non-zero value for relatively thick or thin films, respectively. The finiteness of secondary electron yield value, which was found to be proportional to electronic energy losses of the helium ion in silicon substrate, can be explained by the electron emission excited from the substrate by the helium ions. The method of measurement of secondary electron energy distribution from insulators was suggested, and secondary electron energy distribution from silicon nitride was obtained.

Foreign Object Damage Behavior of Two Gas-turbine Grade Silicon Nitrides by Steel Ball Projectiles at Ambient Temperature

NASA Technical Reports Server (NTRS)

Choi, Sung R.; Pereira, J. Michael; Janosik, Lesley A.; Bhatt, Ramakrishna T.

2002-01-01

Foreign object damage (FOD) behavior of two commercial gas-turbine grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through strength testing of flexure test specimens impacted by steel-ball projectiles with a diameter of 1.59 mm in a velocity range from 220 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (K(sub IC)). Additionally, the FOD response of an equiaxed, fine-grained silicon nitride (NC132) was also investigated to provide further insight. The NC132 silicon nitride exhibited the lowest fracture toughness of the three materials tested, providing further evidence that K(sub IC) is a key material parameter affecting FOD resistance. The observed damage generated by projectile impact was typically in the forms of well- or ill-developed ring or cone cracks with little presence of radial cracks.

Nitridation of silicon. M.S. Thesis Case Western Reserve Univ.

NASA Technical Reports Server (NTRS)

Shaw, N. J.

1981-01-01

Silicon powders with three levels of impurities, principally Fe, were sintered in He or H2. Non-densifying mechanisms of material transport were dominant in all cases. High purity Si showed coarsening in He while particle growth was suppressed in H2. Lower purity powder coarsened in both He and H2. The same three Si powders and Si /111/ single crystal wafers were nitrided in both N2 and N2/H2 atmospheres. Hydrogen increased the degree of nitridation of all three powders and the alpha/beta ratio of the lower purity powder. Some Si3N4 whiskers and open channels through the surface nitride layer were observed in the presence of Fe, correlating with the nitridation-enhancing effects of Fe. Thermodynamic calculations showed that when SiO2 is present on the Si, addition of H2 to the nitriding atmosphere decreases the amount of SiO2 and increases the partial pressure of Si-containing vapor species, that is, Si and SiO. Large amounts of NH3 and SiH4 were also predicted to form.

Reaction layer characterization of the braze joint of silicon nitride to stainless steel

NASA Astrophysics Data System (ADS)

Xu, R.; Indacochea, J. E.

1994-10-01

This investigation studies the role of titanium in the development of the reaction layer in braze joining silicon nitride to stainless steel using titanium-active copper-silver filler metals. This reaction layer formed as a result of titanium diffusing to the filler metal/silicon nitride interface and reacting with the silicon nitride to form the intermetallics, titanium nitride (TiN) and titanium suicide (Ti 5Si3). This reaction layer, as recognized in the literature, allows wetting of the ceramic substrate by the molten filler metal. The reaction layer thickness increases with temperature and time. Its growth rate obeys the parabolic relationship. Activation energies of 220.1 and 210.9 kj/mol were calculated for growth of the reaction layer for the two filler metals used. These values are close to the activation energy of nitrogen in TiN (217.6 kj/mol). Two filler metals were used in this study, Ticusil (68.8 wt% Ag, 26.7 wt% Cu, 4.5 wt% Ti) and CB4 (70.5 wt% Ag, 26.5 wt% Cu, 3.0 wt% Ti). The joints were processed in vacuum at temperatures of 840 to 900 °C at various times. Bonding strength is affected by reaction layer thickness in the absence of Ti-Cu intermetallics in the filler metal matrix.

Synthesis of boron nitride nanotubes and their applications

PubMed Central

Kalay, Saban; Yilmaz, Zehra; Sen, Ozlem; Emanet, Melis; Kazanc, Emine

2015-01-01

Summary Boron nitride nanotubes (BNNTs) have been increasingly investigated for use in a wide range of applications due to their unique physicochemical properties including high hydrophobicity, heat and electrical insulation, resistance to oxidation, and hydrogen storage capacity. They are also valued for their possible medical and biomedical applications including drug delivery, use in biomaterials, and neutron capture therapy. In this review, BNNT synthesis methods and the surface modification strategies are first discussed, and then their toxicity and application studies are summarized. Finally, a perspective for the future use of these novel materials is discussed. PMID:25671154

Broadband enhancement of single photon emission and polarization dependent coupling in silicon nitride waveguides.

PubMed

Bisschop, Suzanne; Guille, Antoine; Van Thourhout, Dries; Hens, Zeger; Brainis, Edouard

2015-06-01

Single-photon (SP) sources are important for a number of optical quantum information processing applications. We study the possibility to integrate triggered solid-state SP emitters directly on a photonic chip. A major challenge consists in efficiently extracting their emission into a single guided mode. Using 3D finite-difference time-domain simulations, we investigate the SP emission from dipole-like nanometer-sized inclusions embedded into different silicon nitride (SiNx) photonic nanowire waveguide designs. We elucidate the effect of the geometry on the emission lifetime and the polarization of the emitted SP. The results show that highly efficient and polarized SP sources can be realized using suspended SiNx slot-waveguides. Combining this with the well-established CMOS-compatible processing technology, fully integrated and complex optical circuits for quantum optics experiments can be developed.

Influence of interfaces density and thermal processes on mechanical stress of PECVD silicon nitride

NASA Astrophysics Data System (ADS)

Picciotto, A.; Bagolini, A.; Bellutti, P.; Boscardin, M.

2009-10-01

The paper focuses on a particular silicon nitride thin film (SiN x) produced by plasma enahanced chemical vapor deposition (PECVD) technique with high deposition rate (26 nm/min) and low values of mechanical stress (<100 MPa). This was perfomed with mixed frequency procedure varying the modulation of high frequency at 13.56 MHz and low frequency at 308 kHz of RF power supply during the deposition, without changing the ratio of reaction gases. Low stress silicon nitride is commonly obtained by tailoring the thickness ratio of high frequency vs. low frequency silicon nitride layers. The attention of this work was directed to the influence of the number of interfaces per thickness unit on the stress characteristics of the deposited material. Two sets of wafer samples were deposited with low stress silicon nitride, with a thickness of 260 nm and 2 μm, respectively. Thermal annealing processes at 380 and 520 °C in a inert enviroment were also performed on the wafers. The Stoney-Hoffman model was used to estimate the stress values by wafer curvature measurement with a mechanical surface profilometer: the stress was calculated for the as-deposited layer, and after each annealing process. The thickness and the refractive index of the SiN x were also measured and charaterized by variable angle spectra elliposometry (VASE) techinique. The experimental measurements were performed at the MT-LAB, IRST (Istituto per la Ricerca Scientifica e Tecnologica) of Bruno Kessler Foundation for Research in Trento.

Sponge-like reduced graphene oxide/silicon/carbon nanotube composites for lithium ion batteries

NASA Astrophysics Data System (ADS)

Fang, Menglu; Wang, Zhao; Chen, Xiaojun; Guan, Shiyou

2018-04-01

Three-dimensional sponge-like reduced graphene oxide/silicon/carbon nanotube composites were synthesized by one-step hydrothermal self-assembly using silicon nanoparticles, graphene oxide and amino modified carbon nanotubes to develop high-performance anode materials of lithium ion batteries. Scanning electron microscopy and transmission electron microscopy images show the structure of composites that Silicon nanoparticles are coated with reduced graphene oxide while amino modified carbon nanotubes wrap around the reduced graphene oxide in the composites. When applied to lithium ion battery, these composites exhibit high initial specific capacity of 2552 mA h/g at a current density of 0.05 A/g. In addition, reduced graphene oxide/silicon/carbon nanotube composites also have better cycle stability than bare Silicon nanoparticles electrode with the specific capacity of 1215 mA h/g after 100 cycles. The three-dimension sponge-like structure not only ensures the electrical conductivity but also buffers the huge volume change, which has broad potential application in the field of battery.

Rheological properties of concentrated, nonaqueous silicon nitride suspensions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bergstroem, L.

1996-12-01

The rheological properties of nonaqueous silicon nitride powder suspensions have been investigated using steady shear and viscoelastic measurements. The polymeric dispersant, Hypermer KD-3, adsorbed strongly on the powder surfaces, and colloidally stable, fluid suspensions up to a volume fraction of {Phi} = 0.50 could be prepared. The concentrated suspensions all displayed a shear thinning behavior which could be modeled using the high shear form of the Cross equation. The viscoelastic response at high concentrations was dominated by particle interactions, probably due to interpenetration of the adsorbed polymer layers, and a thickness of the adsorbed Hypermer KD-3 layer, {Delta} {approx} 10more » nm, was estimated. The volume fraction dependences of the high shear viscosity of three different silicon nitride powders were compared and the differences, analyzed by using a modified Krieger-Dougherty model, were related to effective volume effects and the physical characteristics of the powders. The significantly lower maximum volume fraction, {Phi}{sub m} = 0.47, of the SN E-10 powder was referred to the narrow particle size distribution and the possibility of an unfavorable particle morphology.« less

Sputtered silicon nitride coatings for wear protection

NASA Technical Reports Server (NTRS)

Grill, A.; Aron, P. R.

1982-01-01

Silicon nitride films were deposited by RF sputtering on 304 stainless steel substrates in a planar RF sputtering apparatus. The sputtering was performed from a Si3N4 target in a sputtering atmosphere of argon and nitrogen. The rate of deposition, the composition of the coatings, the surface microhardness and the adhesion of the coatings to the substrates were investigated as a function of the process parameters, such as: substrate target distance, fraction nitrogen in the sputtering atmosphere and sputtering pressure. Silicon rich coating was obtained for fraction nitrogen below 0.2. The rate of deposition decreases continuously with increasing fraction nitrogen and decreasing sputtering pressure. It was found that the adherence of the coatings improves with decreasing sputtering pressure, almost independently of their composition.

Power mixture and green body for producing silicon nitride base & articles of high fracture toughness and strength

DOEpatents

Huckabee, Marvin L.; Buljan, Sergej-Tomislav; Neil, Jeffrey T.

1991-01-01

A powder mixture and a green body for producing a silicon nitride-based article of improved fracture toughness and strength. The powder mixture includes 9a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon mitride powder of an average particle size of about 0.2 .mu.m and a surface area of about 8-12m.sup.2 g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 .mu.m and a surface area of about 2-4 m.sup.2 /g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified articel an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. The green body is formed from the powder mixture, an effective amount of a suitable oxide densification aid, and an effective amount of a suitable organic binder.

Ab initio design of nanostructures for solar energy conversion: a case study on silicon nitride nanowire.

PubMed

Pan, Hui

2014-01-01

Design of novel materials for efficient solar energy conversion is critical to the development of green energy technology. In this work, we present a first-principles study on the design of nanostructures for solar energy harvesting on the basis of the density functional theory. We show that the indirect band structure of bulk silicon nitride is transferred to direct bandgap in nanowire. We find that intermediate bands can be created by doping, leading to enhancement of sunlight absorption. We further show that codoping not only reduces the bandgap and introduces intermediate bands but also enhances the solubility of dopants in silicon nitride nanowires due to reduced formation energy of substitution. Importantly, the codoped nanowire is ferromagnetic, leading to the improvement of carrier mobility. The silicon nitride nanowires with direct bandgap, intermediate bands, and ferromagnetism may be applicable to solar energy harvesting.

Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches

PubMed Central

Chen, Lingxiu; He, Li; Wang, Hui Shan; Wang, Haomin; Tang, Shujie; Cong, Chunxiao; Xie, Hong; Li, Lei; Xia, Hui; Li, Tianxin; Wu, Tianru; Zhang, Daoli; Deng, Lianwen; Yu, Ting; Xie, Xiaoming; Jiang, Mianheng

2017-01-01

Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs. PMID:28276532

Optical absorption of zigzag single walled boron nitride nanotubes

NASA Astrophysics Data System (ADS)

Moradian, Rostam; Chegel, Raad; Behzad, Somayeh

2010-11-01

In a realistic three-dimensional model, optical matrix element and linear optical absorption of zigzag single walled boron nitride nanotubes (BNNTs) in the tight binding approximation are studied. In terms of absolute value of dipole matrix elements of the first three direct transitions at kz=0, we divided the zigzag BNNTs into three groups and investigated their optical absorption spectrum in energy ranges E<5, 77.5 eV. We found that in lower energies, E<5 eV, all groups show different behaviors while in the higher energies, 77.5 eV, their behaviors depend on their even or odd nanotube index. We also found that in the energy range 7nanotube diameter. We also found that increasing the tubes diameter leads to red shift for all peaks except ‘A’ peak where this peak moves to higher energies. Our results are in good agreement with the experimental results.

Multifunctional Electroactive Nanocomposites Based on Piezoelectric Boron Nitride Nanotubes.

PubMed

Kang, Jin Ho; Sauti, Godfrey; Park, Cheol; Yamakov, Vesselin I; Wise, Kristopher E; Lowther, Sharon E; Fay, Catharine C; Thibeault, Sheila A; Bryant, Robert G

2015-12-22

Space exploration missions require sensors and devices capable of stable operation in harsh environments such as those that include high thermal fluctuation, atomic oxygen, and high-energy ionizing radiation. However, conventional or state-of-the-art electroactive materials like lead zirconate titanate, poly(vinylidene fluoride), and carbon nanotube (CNT)-doped polyimides have limitations on use in those extreme applications. Theoretical studies have shown that boron nitride nanotubes (BNNTs) have strength-to-weight ratios comparable to those of CNTs, excellent high-temperature stability (to 800 °C in air), large electroactive characteristics, and excellent neutron radiation shielding capability. In this study, we demonstrated the experimental electroactive characteristics of BNNTs in novel multifunctional electroactive nanocomposites. Upon application of an external electric field, the 2 wt % BNNT/polyimide composite was found to exhibit electroactive strain composed of a superposition of linear piezoelectric and nonlinear electrostrictive components. When the BNNTs were aligned by stretching the 2 wt % BNNT/polyimide composite, electroactive characteristics increased by about 460% compared to the nonstretched sample. An all-nanotube actuator consisting of a BNNT buckypaper layer between two single-walled carbon nanotube buckypaper electrode layers was found to have much larger electroactive properties. The additional neutron radiation shielding properties and ultraviolet/visible/near-infrared optical properties of the BNNT composites make them excellent candidates for use in the extreme environments of space missions.

Multifunctional Electroactive Nanocomposites Based on Piezoelectric Boron Nitride Nanotubes

NASA Technical Reports Server (NTRS)

Kang, Jin Ho; Sauti, Godfrey; Park, Cheol; Yamakov, Vesselin I.; Wise, Kristopher E.; Lowther, Sharon E.; Fay, Catharine C.; Thibeault, Sheila A.; Bryant, Robert G.

2015-01-01

Space exploration missions require sensors and devices capable of stable operation in harsh environments such as those that include high thermal fluctuation, atomic oxygen, and high-energy ionizing radiation. However, conventional or state-of-the-art electroactive materials like lead zirconate titanate, poly(vinylidene fluoride), and carbon nanotube (CNT)-doped polyimides have limitations on use in those extreme applications. Theoretical studies have shown that boron nitride nanotubes (BNNTs) have strength-to-weight ratios comparable to those of CNTs, excellent high-temperature stability (to 800 C in air), large electroactive characteristics, and excellent neutron radiation shielding capability. In this study, we demonstrated the experimental electroactive characteristics of BNNTs in novel multifunctional electroactive nanocomposites. Upon application of an external electric field, the 2 wt % BNNT/polyimide composite was found to exhibit electroactive strain composed of a superposition of linear piezoelectric and nonlinear electrostrictive components. When the BNNTs were aligned by stretching the 2 wt % BNNT/polyimide composite, electroactive characteristics increased by about 460% compared to the nonstretched sample. An all-nanotube actuator consisting of a BNNT buckypaper layer between two single-walled carbon nanotube buck-paper electrode layers was found to have much larger electroactive properties. The additional neutron radiation shielding properties and ultraviolet/visible/near-infrared optical properties of the BNNT composites make them excellent candidates for use in the extreme environments of space missions. utilizing the unique characteristics of BNNTs.

Silicon Nitride Ceramic Fibers from Preceramic Polymers.

DTIC Science & Technology

1987-06-01

the preceramic fibers into high strength Si3 N and silicon carbide nitride (SiCN) fibers. In the past year, we have learned to prepare polysilazanes...INTHELOY, Given the Empirical Formula for a Material, It Should be Possible to Prepare a Chemical Analog CERAMC CHMIAL MONOMERIC UNIT MONOMERIC UNIT SI3 N4...e a d e nf u ible B y. POLYSILAZANE PRECURSORS TO Si3 Nj IN PRACTICE: It Is Difficult to Synthesize Even Simple, High Molecular Weight Preceramic

Boron nitride nanotubes for gene silencing.

PubMed

Şen, Özlem; Çobandede, Zehra; Emanet, Melis; Bayrak, Ömer Faruk; Çulha, Mustafa

2017-09-01

Non-viral gene delivery is increasingly investigated as an alternative to viral vectors due to low toxicity and immunogenicity, easy preparation, tissue specificity, and ability to transfer larger sizes of genes. In this study, boron nitride nanotubes (BNNTs) are functionalized with oligonucleotides (oligo-BNNTs). The morpholinos complementary to the oligonucleotides attached to the BNNTs (morpholino/oligo-BNNTs) are hybridized to silence the luciferase gene. The morpholino/oligo-BNNTs conjugates are administered to luciferase-expressing cells (MDA-MB-231-luc2) and the luciferase activity is monitored. The luciferase activity is decreased when MDA-MB-231-luc2 cells were treated with morpholino/oligo-BNNTs. The study suggests that BNNTs can be used as a potential vector to transfect cells. BNNTs are potential new nanocarriers for gene delivery applications. Copyright © 2017 Elsevier B.V. All rights reserved.

Crack healing behavior of hot pressed silicon nitride due to oxidation

NASA Technical Reports Server (NTRS)

Choi, S. R.; Tikare, V.

1992-01-01

It is shown that limited oxidation of an MgO-containing, hot-pressed silicon nitride ceramic at 800 deg C and above results in increased strength due to crack healing. Slight oxidation of the surface produces enstatite and cristobalite which fills in cracks. More extensive oxidation leads to strength degradation due to the formation of new flaws by the evolution of N2 gas at the surface. The apparent fracture toughness also increased at 800 deg C and above due to oxidation. Bonds formed between the two surfaces of the crack during oxidation leads to a reduction in stress intensity at the crack tip, suggesting that valid high-temperature toughness values cannot be obtained in an air environment. The increase in strength due to crack healing by oxidation can be achieved without compromising the fatigue properties of the silicon nitride ceramic.

Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

NASA Astrophysics Data System (ADS)

Roland, I.; Zeng, Y.; Han, Z.; Checoury, X.; Blin, C.; El Kurdi, M.; Ghrib, A.; Sauvage, S.; Gayral, B.; Brimont, C.; Guillet, T.; Semond, F.; Boucaud, P.

2014-07-01

We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a ˜7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission.

Improved Process for Fabricating Carbon Nanotube Probes

NASA Technical Reports Server (NTRS)

Stevens, R.; Nguyen, C.; Cassell, A.; Delzeit, L.; Meyyappan, M.; Han, Jie

2003-01-01

An improved process has been developed for the efficient fabrication of carbon nanotube probes for use in atomic-force microscopes (AFMs) and nanomanipulators. Relative to prior nanotube tip production processes, this process offers advantages in alignment of the nanotube on the cantilever and stability of the nanotube's attachment. A procedure has also been developed at Ames that effectively sharpens the multiwalled nanotube, which improves the resolution of the multiwalled nanotube probes and, combined with the greater stability of multiwalled nanotube probes, increases the effective resolution of these probes, making them comparable in resolution to single-walled carbon nanotube probes. The robust attachment derived from this improved fabrication method and the natural strength and resiliency of the nanotube itself produces an AFM probe with an extremely long imaging lifetime. In a longevity test, a nanotube tip imaged a silicon nitride surface for 15 hours without measurable loss of resolution. In contrast, the resolution of conventional silicon probes noticeably begins to degrade within minutes. These carbon nanotube probes have many possible applications in the semiconductor industry, particularly as devices are approaching the nanometer scale and new atomic layer deposition techniques necessitate a higher resolution characterization technique. Previously at Ames, the use of nanotube probes has been demonstrated for imaging photoresist patterns with high aspect ratio. In addition, these tips have been used to analyze Mars simulant dust grains, extremophile protein crystals, and DNA structure.

Efficient Gate-tunable light-emitting device made of defective boron nitride nanotubes: from ultraviolet to the visible

PubMed Central

Attaccalite, Claudio; Wirtz, Ludger; Marini, Andrea; Rubio, Angel

2013-01-01

Boron nitride is a promising material for nanotechnology applications due to its two-dimensional graphene-like, insulating, and highly-resistant structure. Recently it has received a lot of attention as a substrate to grow and isolate graphene as well as for its intrinsic UV lasing response. Similar to carbon, one-dimensional boron nitride nanotubes (BNNTs) have been theoretically predicted and later synthesised. Here we use first principles simulations to unambiguously demonstrate that i) BN nanotubes inherit the highly efficient UV luminescence of hexagonal BN; ii) the application of an external perpendicular field closes the electronic gap keeping the UV lasing with lower yield; iii) defects in BNNTS are responsible for tunable light emission from the UV to the visible controlled by a transverse electric field (TEF). Our present findings pave the road towards optoelectronic applications of BN-nanotube-based devices that are simple to implement because they do not require any special doping or complex growth. PMID:24060843

A 1 GHz integrated circuit with carbon nanotube interconnects and silicon transistors.

PubMed

Close, Gael F; Yasuda, Shinichi; Paul, Bipul; Fujita, Shinobu; Wong, H-S Philip

2008-02-01

Due to their excellent electrical properties, metallic carbon nanotubes are promising materials for interconnect wires in future integrated circuits. Simulations have shown that the use of metallic carbon nanotube interconnects could yield more energy efficient and faster integrated circuits. The next step is to build an experimental prototype integrated circuit using carbon nanotube interconnects operating at high speed. Here, we report the fabrication of the first stand-alone integrated circuit combining silicon transistors and individual carbon nanotube interconnect wires on the same chip operating above 1 GHz. In addition to setting a milestone by operating above 1 GHz, this prototype is also a tool to investigate carbon nanotubes on a silicon-based platform at high frequencies, paving the way for future multi-GHz nanoelectronics.

High Kinetic Energy Penetrator Shielding and High Wear Resistance Materials Fabricated with Boron Nitride Nanotubes (BNNTS) and BNNT Polymer Composites

NASA Technical Reports Server (NTRS)

Kang, Jin Ho (Inventor); Sauti, Godfrey (Inventor); Smith, Michael W. (Inventor); Jordan, Kevin C. (Inventor); Park, Cheol (Inventor); Bryant, Robert George (Inventor); Lowther, Sharon E. (Inventor)

2015-01-01

Boron nitride nanotubes (BNNTs), boron nitride nanoparticles (BNNPs), carbon nanotubes (CNTs), graphites, or combinations, are incorporated into matrices of polymer, ceramic or metals. Fibers, yarns, and woven or nonwoven mats of BNNTs are used as toughening layers in penetration resistant materials to maximize energy absorption and/or high hardness layers to rebound or deform penetrators. They can be also used as reinforcing inclusions combining with other polymer matrices to create composite layers like typical reinforcing fibers such as Kevlar.RTM., Spectra.RTM., ceramics and metals. Enhanced wear resistance and usage time are achieved by adding boron nitride nanomaterials, increasing hardness and toughness. Such materials can be used in high temperature environments since the oxidation temperature of BNNTs exceeds 800.degree. C. in air. Boron nitride based composites are useful as strong structural materials for anti-micrometeorite layers for spacecraft and space suits, ultra strong tethers, protective gear, vehicles, helmets, shields and safety suits/helmets for industry.

A study of vapor-phase deposition of silicon nitride layers by ammonolysis of dichlorosilane at lowered pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Manzha, N. M., E-mail: magazine@miee.ru

2010-12-15

Deposition kinetics of silicon nitride layers at lowered reactor pressures of 10-130 Pa and temperatures in the range 973-1073 K has been studied. The equilibrium constant of the bimolecular reaction of dichlorosilane with ammonia has been calculated. The apparent activation energies calculated taking into account the experimental growth rate nearly coincide with the experimental data. Recommendations for improving the quality of silicon nitride layers are made.

Method and device to synthesize boron nitride nanotubes and related nanoparticles

DOEpatents

Zettl, Alexander K.

2016-07-19

Methods and apparatus for producing chemical nanostructures having multiple elements, such as boron and nitride, e.g. boron nitride nanotubes, are disclosed. The method comprises creating a plasma jet, or plume, such as by an arc discharge. The plasma plume is elongated and has a temperature gradient along its length. It extends along its length into a port connector area having ports for introduction of feed materials. The feed materials include the multiple elements, which are introduced separately as fluids or powders at multiple ports along the length of the plasma plume, said ports entering the plasma plume at different temperatures. The method further comprises modifying a temperature at a distal portion of or immediately downstream of said plasma plume; and collecting said chemical nanostructures after said modifying.

Development of silicon nitride of improved toughness

NASA Technical Reports Server (NTRS)

Brennan, J. J.

1979-01-01

The application of reaction sintered Si2N4 energy absorbing surface layers to hot-pressed Si3N4 was investigated. The surface layer was formed by in-place nitridation of silicon powder. It was found that reaction sintered Si3N4 layers of 1 mm thickness, fabricated from either -100, +200, -200, or -325 mesh Si powder and nitrided in 96% N2/4% H2 so that approximately 20-25 vol % unnitrided Si remained in the layer, resulted in a sevenfold increase in ballistic impact resistance of a 0.64 cm thick hot-pressed SI3N4 substrate from RT 1370 C. Both NC-132 SI3N4, with MgO additive, and NCX-34 Si3N4, with Y2O3 additive, were evaluated as substrate material. The finer grain size -200 and -325 mesh nitrided Si layers were for their smoothness and relatively high density. It was found that nitriding in N2/H2 mixtures, rather than pure N2, resulted in a microstructure that did not substantially degrade the strength of the hot-pressed Si3N4 substrate. Thermal cycling tests on the RSSN/HPSN combinations from 200 C to 1370 C for 75 cycles in air did not degrade the impact resistance nor the interfacial bonding, although a large amount of internal silica formation occurred within the RSSN layer. Mach 0.8, 5 hr, hot gas erosion tests showed no surface recession of RSSN layers at 1200 C and slight surface recession at 1370 C.

Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roland, I.; Zeng, Y.; Han, Z.

We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a ∼7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission.

Strong visible electroluminescence from silicon nanocrystals embedded in a silicon carbide film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huh, Chul, E-mail: chuh@etri.re.kr; Kim, Tae-Youb; Ahn, Chang-Geun

2015-05-25

We report the strong visible light emission from silicon (Si) nanocrystals (NCs) embedded in a Si carbide (SiC) film. Compared to Si NC light-emitting diode (LED) by employing the Si nitride (SiN{sub x}) film as a surrounding matrix, the turn-on voltage of the Si NC LED with the SiC film was significantly decreased by 4 V. This was attributed to a smaller barrier height for injecting the electrons into the Si NCs due to a smaller band gap of SiC film than a SiN{sub x} film. The electroluminescence spectra increases with increasing forward voltage, indicating that the electrons are efficiently injectedmore » into the Si NCs in the SiC film. The light output power shows a linear increase with increasing forward voltage. The light emission originated from the Si NCs in a SiC film was quite uniform. The power efficiency of the Si NC LED with the SiC film was 1.56 times larger than that of the Si NC LED with the SiN{sub x} film. The Si NCs in a SiC film show unique advantages and are a promising candidate for application in optical devices.« less

Magnetic Field Effect on Ultrashort Two-dimensional Optical Pulse Propagation in Silicon Nanotubes

NASA Astrophysics Data System (ADS)

Konobeeva, N. N.; Evdokimov, R. A.; Belonenko, M. B.

2018-05-01

The paper deals with the magnetic field effect which provides a stable propagation of ultrashort pulses in silicon nanotubes from the viewpoint of their waveform. The equation is derived for the electromagnetic field observed in silicon nanotubes with a glance to the magnetic field for two-dimensional optical pulses. The analysis is given to the dependence between the waveform of ultrashort optical pulses and the magnetic flux passing through the cross-sectional area of the nanotube.

Silicon nitride ceramic development in Thales Alenia Space : qualification achievement and further developments for future applications

NASA Astrophysics Data System (ADS)

Cornillon, L.; Devilliers, C.; Behar-Lafenetre, S.; Ait-Zaid, S.; Berroth, K.; Bravo, A. C.

2017-11-01

Dealing with ceramic materials for more than two decades, Thales Alenia Space - France has identified Silicon Nitride Si3N4 as a high potential material for the manufacturing of stiff, stable and lightweight truss structure for future large telescopes. Indeed, for earth observation or astronomic observation, space mission requires more and more telescopes with high spatial resolution, which leads to the use of large primary mirrors, and a long distance between primary and secondary mirrors. Therefore current and future large space telescopes require a huge truss structure to hold and locate precisely the mirrors. Such large structure requires very strong materials with high specific stiffness and a low coefficient of thermal expansion (CTE). Based on the silicon nitride performances and on the know how of FCT Ingenieurkeramik to manufacture complex parts, Thales Alenia Space (TAS) has engaged, in cooperation with FCT, activities to develop and qualify silicon nitride parts for other applications for space projects.

Silicon nitride ceramic development in Thales Alenia Space: qualification achiement and further developments for future applications

NASA Astrophysics Data System (ADS)

Cornillon, L.; Devilliers, C.; Behar-Lafenetre, S.; Ait-Zaid, S.; Berroth, K.; Bravo, A. C.

2017-11-01

Dealing with ceramic materials for more than two decades, Thales Alenia Space - France has identified Silicon Nitride Si3N4 as a high potential material for the manufacturing of stiff, stable and lightweight truss structure for future large telescopes. Indeed, for earth observation or astronomic observation, space mission requires more and more telescopes with high spatial resolution, which leads to the use of large primary mirrors, and a long distance between primary and secondary mirrors. Therefore current and future large space telescopes require a huge truss structure to hold and locate precisely the mirrors. Such large structure requires very strong materials with high specific stiffness and a low coefficient of thermal expansion (CTE). Based on the silicon nitride performances and on the know how of FCT Ingenieurkeramik to manufacture complex parts, Thales Alenia Space (TAS) has engaged, in cooperation with FCT, activities to develop and qualify silicon nitride parts for other applications for space projects.

Combination of carbon nitride and carbon nanotubes: synergistic catalysts for energy conversion.

PubMed

Gong, Yutong; Wang, Jing; Wei, Zhongzhe; Zhang, Pengfei; Li, Haoran; Wang, Yong

2014-08-01

Due to their versatile features and environmental friendliness, functionalized carbon materials show great potential in practical applications, especially in energy conversion. Developing carbon composites with properties that can be modulated by simply changing the ratio of the original materials is an intriguing synthetic strategy. Here, we took cyanamide and multiwalled carbon nanotubes as precursors and introduced a facile method to fabricate a series of graphitic carbon nitride/carbon nanotubes (g-C3 N4 /CNTs) composites. These composites demonstrated different practical applications with different weight ratios of the components, that is, they showed synergistic effects in optoelectronic conversion when g-C3 N4 was the main ingredient and in oxygen reduction reaction (ORR) when CNTs dominated the composites. Our experiments indicated that the high electrical conductivity of carbon nanotubes promoted the transmission of the charges in both cases. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hot isostatic pressing of silicon nitride Sisub3n4 containing zircon, or zirconia and silica

NASA Technical Reports Server (NTRS)

Somiya, S.; Yoshimura, M.; Suzuki, T.; Nishimura, H.

1980-01-01

A hydrothermal synthesis apparatus with a 10 KB cylinder was used to obtain a sintered body of silicon nitride. The sintering auxiliary agents used were zircon (ZrSiO4) and a mixture of zirconia (ZrO2) and silica (SiO2). Experiments were conducted with the amounts of ZrSi04 or ArO2 and SiO2 varying over a wide range and the results compared to discover the quantity of additive which produced sintering in silicon nitride by the hot pressing method.

Hard carbon nitride and method for preparing same

DOEpatents

Haller, Eugene E.; Cohen, Marvin L.; Hansen, William L.

1992-01-01

Novel crystalline .alpha. (silicon nitride-like)-carbon nitride and .beta. (silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate.

Linear Optical Response of Silicon Nanotubes Under Axial Magnetic Field

NASA Astrophysics Data System (ADS)

Chegel, Raad; Behzad, Somayeh

2013-01-01

We investigated the optical properties of silicon nanotubes (SiNTs) in the low energy region, E < 0.5 eV, and middle energy region, 1.8 eV < E < 2 eV. The dependence of optical matrix elements and linear susceptibility on radius and magnetic field, in terms of one-dimensional (1-d) wavevector and subband index, is calculated using the tight-binding approximation. It is found that, on increasing the nanotube diameter, the low-energy peaks show red-shift and their intensities are decreased. Also, we found that in the middle energy region all tubes have two distinct peaks, where the energy position of the second peak is approximately constant and independent of the nanotube diameter. Comparing the band structure of these tubes in different magnetic fields, several differences are clearly seen, such as splitting of degenerate bands, creation of additional band-edge states, and bandgap modification. It is found that applying the magnetic field leads to a phase transition in zigzag silicon hexagonal nanotubes (Si h-NTs), unlike in zigzag silicon gear-like nanotubes (Si g-NTs), which remain semiconducting in any magnetic field. We found that the axial magnetic field has two effects on the linear susceptibility spectrum, namely broadening and splitting. The axial magnetic field leads to the creation of a peak with energy less than 0.2 eV in metallic Si h-NTs, whereas in the absence of a magnetic field such a transition is not allowed.

Hard carbon nitride and method for preparing same

DOEpatents

Haller, E.E.; Cohen, M.L.; Hansen, W.L.

1992-05-05

Novel crystalline [alpha](silicon nitride-like)-carbon nitride and [beta](silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate. 1 figure.

Very Long Single and Few-Walled Boron Nitride Nanotubes via the Pressurized Vapor/Condenser Method

NASA Technical Reports Server (NTRS)

Smith, Michael W.; Jordan, Kevin C.; Park, Cheol; Kim, Jae-Woo; Lillehei, Peter T.; Crooks, Roy; Harrison, Joycelyn S.

2009-01-01

A new method for producing long, small diameter, single and few-walled, boron nitride nanotubes (BNNTs) in macroscopic quantities is reported. The pressurized vapor/condenser (PVC) method produces, without catalysts, highly crystalline, very long, small diameter, BNNTs. Palm-sized, cotton-like masses of BNNT raw material were grown by this technique and spun directly into centimeters-long yarn. Nanotube lengths were observed to be 100 times that of those grown by the most closely related method. Self-assembly and growth models for these long BNNTs are discussed.

Defect induced plasticity and failure mechanism of boron nitride nanotubes under tension

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anoop Krishnan, N. M., E-mail: anoopnm@civil.iisc.ernet.in; Ghosh, Debraj

2014-07-28

The effects of Stone-Wales (SW) and vacancy defects on the failure behavior of boron nitride nanotubes (BNNTs) under tension are investigated using molecular dynamics simulations. The Tersoff-Brenner potential is used to model the atomic interaction and the temperature is maintained close to 300 K. The effect of a SW defect is studied by determining the failure strength and failure mechanism of nanotubes with different radii. In the case of a vacancy defect, the effect of an N-vacancy and a B-vacancy is studied separately. Nanotubes with different chiralities but similar diameter is considered first to evaluate the chirality dependence. The variation ofmore » failure strength with the radius is then studied by considering nanotubes of different diameters but same chirality. It is observed that the armchair BNNTs are extremely sensitive to defects, whereas the zigzag configurations are the least sensitive. In the case of pristine BNNTs, both armchair and zigzag nanotubes undergo brittle failure, whereas in the case of defective BNNTs, only the zigzag ones undergo brittle failure. An interesting defect induced plastic behavior is observed in defective armchair BNNTs. For this nanotube, the presence of a defect triggers mechanical relaxation by bond breaking along the closest zigzag helical path, with the defect as the nucleus. This mechanism results in a plastic failure.« less

Investigating the Effect of Carbon Nanotube Diameter and Wall Number in Carbon Nanotube/Silicon Heterojunction Solar Cells

PubMed Central

Grace, Tom; Yu, LePing; Gibson, Christopher; Tune, Daniel; Alturaif, Huda; Al Othman, Zeid; Shapter, Joseph

2016-01-01

Suspensions of single-walled, double-walled and multi-walled carbon nanotubes (CNTs) were generated in the same solvent at similar concentrations. Films were fabricated from these suspensions and used in carbon nanotube/silicon heterojunction solar cells and their properties were compared with reference to the number of walls in the nanotube samples. It was found that single-walled nanotubes generally produced more favorable results; however, the double and multi-walled nanotube films used in this study yielded cells with higher open circuit voltages. It was also determined that post fabrication treatments applied to the nanotube films have a lesser effect on multi-walled nanotubes than on the other two types. PMID:28344309

Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okada, H.; Kato, M.; Ishimaru, T.

2014-02-20

Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma is investigated. Feasibility of precursors of triethylsilane (TES) and bis(dimethylamino)dimethylsilane (BDMADMS) is discussed based on a calculation of bond energies by computer simulation. Refractive indices of 1.81 and 1.71 are obtained for deposited films with TES and BDMADMS, respectively. X-ray photoelectron spectroscopy (XPS) analysis of the deposited film revealed that TES-based film coincides with the stoichiometric thermal silicon nitride.

Growth of carbon nanotubes by Fe-catalyzed chemical vapor processes on silicon-based substrates

NASA Astrophysics Data System (ADS)

Angelucci, Renato; Rizzoli, Rita; Vinciguerra, Vincenzo; Fortuna Bevilacqua, Maria; Guerri, Sergio; Corticelli, Franco; Passini, Mara

2007-03-01

In this paper, a site-selective catalytic chemical vapor deposition synthesis of carbon nanotubes on silicon-based substrates has been developed in order to get horizontally oriented nanotubes for field effect transistors and other electronic devices. Properly micro-fabricated silicon oxide and polysilicon structures have been used as substrates. Iron nanoparticles have been obtained both from a thin Fe film evaporated by e-gun and from iron nitrate solutions accurately dispersed on the substrates. Single-walled nanotubes with diameters as small as 1 nm, bridging polysilicon and silicon dioxide “pillars”, have been grown. The morphology and structure of CNTs have been characterized by SEM, AFM and Raman spectroscopy.

Formation of porous surface layers in reaction bonded silicon nitride during processing

NASA Technical Reports Server (NTRS)

Shaw, N. J.; Glasgow, T. K.

1979-01-01

An effort was undertaken to determine if the formation of the generally observed layer of large porosity adjacent to the as-nitride surfaces of reaction bonded silicon nitrides could be prevented during processing. Isostatically pressed test bars were prepared from wet vibratory milled Si powder. Sintering and nitriding were each done under three different conditions:(1) bars directly exposed to the furnance atmosphere; (2) bars packed in Si powder; (3) bars packed in Si3N4 powder. Packing the bars in either Si of Si3N4 powder during sintering retarded formation of the layer of large porosity. Only packing the bars in Si prevented formation of the layer during nitridation. The strongest bars (316 MPa) were those sintered in Si and nitrided in Si3N4 despite their having a layer of large surface porosity; failure initiated at very large pores and inclusions. The alpha/beta ratio was found to be directly proportional to the oxygen content; a possible explanation for this relationship is discussed.

Preparation of electrochemically active silicon nanotubes in highly ordered arrays

PubMed Central

Grünzel, Tobias; Lee, Young Joo; Kuepper, Karsten

2013-01-01

Summary Silicon as the negative electrode material of lithium ion batteries has a very large capacity, the exploitation of which is impeded by the volume changes taking place upon electrochemical cycling. A Si electrode displaying a controlled porosity could circumvent the difficulty. In this perspective, we present a preparative method that yields ordered arrays of electrochemically competent silicon nanotubes. The method is based on the atomic layer deposition of silicon dioxide onto the pore walls of an anodic alumina template, followed by a thermal reduction with lithium vapor. This thermal reduction is quantitative, homogeneous over macroscopic samples, and it yields amorphous silicon and lithium oxide, at the exclusion of any lithium silicides. The reaction is characterized by spectroscopic ellipsometry for thin silica films, and by nuclear magnetic resonance and X-ray photoelectron spectroscopy for nanoporous samples. After removal of the lithium oxide byproduct, the silicon nanotubes can be contacted electrically. In a lithium ion electrolyte, they then display the electrochemical waves also observed for other bulk or nanostructured silicon systems. The method established here paves the way for systematic investigations of how the electrochemical properties (capacity, charge/discharge rates, cyclability) of nanoporous silicon negative lithium ion battery electrode materials depend on the geometry. PMID:24205460

Piezoresistive effect of the carbon nanotube yarn embedded axially into the 3D braided composite

NASA Astrophysics Data System (ADS)

Ma, Xin; Cao, Xiaona

2018-06-01

A new method for monitoring 3D braided composite structure health in real time by embedding the carbon nanotube yarn, based on its piezoresistivity, in the composite axially has been designed. The experimental system for piezoresistive effect detection of the carbon nanotube yarn in the 3D braided composite was built, and the sensing characteristics has been analyzed for further research. Compared with other structural health monitoring methods, the monitoring technique with carbon nanotubes yarns is more suitable for internal damage detection immediately, in addition the strength of the composite can be increased by embedding carbon nanotubes yarns. This method can also be used for strain sensing, the development of intelligent materials and structure systems.

The effect of preparation conditions on the structure and mechanical properties of reaction-sintered silicon nitride

NASA Technical Reports Server (NTRS)

Heinrich, J.

1980-01-01

The microstructure of reaction sintered silicon nitride (RSSN) was changed over a wide range by varying the grain density, grain size of the silicon starting powder, nitriding conditions, and by introducing artificial pores. The influence of single microstructural parameters on mechanical properties like room temperature strength, creep behavior, and resistance to thermal shock was investigated. The essential factors influencing these properties were found to be total porosity, pore size distribution, and the fractions of alpha and beta Si3N4. In view of high temperature engineering applications of RSSN, potentials for optimizing the material's properties by controlled processing are discussed.

Hydrogen adsorption in metal-decorated silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Singh, Ram Sevak; Solanki, Ankit

2016-09-01

Hydrogen storage for fuel cell is an active area of research and appropriate materials with excellent hydrogen adsorption properties are highly demanded. Nanotubes, having high surface to volume ratio, are promising storage materials for hydrogen. Recently, silicon carbide nanotubes have been predicted as potential materials for future hydrogen storage application, and studies in this area are ongoing. Here, we report a systematic study on hydrogen adsorption properties in metal (Pt, Ni and Al) decorated silicon carbide nanotubes (SiCNTs) using first principles calculations based on density functional theory. The hydrogen adsorption properties are investigated by calculations of adsorption energy, electronic band structure, density of states (DOS) and Mulliken charge population analysis. Our findings show that hydrogen adsorptions on Pt, Ni and Al-decorated SiCNTs undergo spontaneous exothermic reactions with significant modulation of electronic structure of SiCNTs in all cases. Importantly, according to the Mulliken charge population analysis, dipole-dipole interaction causes chemisorptions of hydrogen in Pt, Ni and Al decorated SiCNTs with formation of chemical bonds. The study is a platform for the development of metal decorated SiCNTs for hydrogen adsorption or hydrogen storage application.

In Situ Mechanical Property Measurements of Amorphous Carbon-Boron Nitride Nanotube Nanostructures

NASA Technical Reports Server (NTRS)

Kim, Jae-Woo; Lin, Yi; Nunez, Jennifer Carpena; Siochi, Emilie J.; Wise, Kristopher E.; Connell, John W.; Smith, Michael W.

2011-01-01

To understand the mechanical properties of amorphous carbon (a-C)/boron nitride nanotube (BNNT) nanostructures, in situ mechanical tests are conducted inside a transmission electron microscope equipped with an integrated atomic force microscope system. The nanotube structure is modified with amorphous carbon deposited by controlled electron beam irradiation. We demonstrate multiple in situ tensile, compressive, and lap shear tests with a-C/BNNT hybrid nanostructures. The tensile strength of the a-C/BNNT hybrid nanostructure is 5.29 GPa with about 90 vol% of a-C. The tensile strength and strain of the end-to-end joint structure with a-C welding is 0.8 GPa and 5.2% whereas the lap shear strength of the side-by-side joint structure with a-C is 0.25 GPa.

Ultra-thin alumina and silicon nitride MEMS fabricated membranes for the electron multiplication

NASA Astrophysics Data System (ADS)

Prodanović, V.; Chan, H. W.; Graaf, H. V. D.; Sarro, P. M.

2018-04-01

In this paper we demonstrate the fabrication of large arrays of ultrathin freestanding membranes (tynodes) for application in a timed photon counter (TiPC), a novel photomultiplier for single electron detection. Low pressure chemical vapour deposited silicon nitride (Si x N y ) and atomic layer deposited alumina (Al2O3) with thicknesses down to only 5 nm are employed for the membrane fabrication. Detailed characterization of structural, mechanical and chemical properties of the utilized films is carried out for different process conditions and thicknesses. Furthermore, the performance of the tynodes is investigated in terms of secondary electron emission, a fundamental attribute that determines their applicability in TiPC. Studied features and presented fabrication methods may be of interest for other MEMS application of alumina and silicon nitride as well, in particular where strong ultra-thin membranes are required.

Electron beam induced etching of carbon nanotubes enhanced by secondary electrons in oxygen.

PubMed

Yoshida, Hideto; Tomita, Yuto; Soma, Kentaro; Takeda, Seiji

2017-05-12

Multi-walled carbon nanotubes (CNTs) are subjected to electron-beam-induced etching (EBIE) in oxygen. The EBIE process is observed in situ by environmental transmission electron microscopy. The partial pressure of oxygen (10 and 100 Pa), energy of the primary electrons (80 and 200 keV), and environment of the CNTs (suspended or supported on a silicon nitride membrane) are investigated as factors affecting the etching rate. The EBIE rate of CNTs was markedly promoted by the effects of secondary electrons that were emitted from a silicon nitride membrane under irradiation by primary electrons. Membrane supported CNTs can be cut by EBIE with a spatial accuracy better than 3 nm, and a nanogap of 2 nm can be successfully achieved between the ends of two suspended CNTs.

Molecular transport through nanoporous silicon nitride membranes produced from self-assembling block copolymers.

PubMed

Montagne, Franck; Blondiaux, Nicolas; Bojko, Alexandre; Pugin, Raphaël

2012-09-28

To achieve fast and selective molecular filtration, membrane materials must ideally exhibit a thin porous skin and a high density of pores with a narrow size distribution. Here, we report the fabrication of nanoporous silicon nitride membranes (NSiMs) at the full wafer scale using a versatile process combining block copolymer (BCP) self-assembly and conventional photolithography/etching techniques. In our method, self-assembled BCP micelles are used as templates for creating sub-100 nm nanopores in a thin low-stress silicon nitride layer, which is then released from the underlying silicon wafer by etching. The process yields 100 nm thick free-standing NSiMs of various lateral dimensions (up to a few mm(2)). We show that the membranes exhibit a high pore density, while still retaining excellent mechanical strength. Permeation experiments reveal that the molecular transport rate across NSiMs is up to 16-fold faster than that of commercial polymeric membranes. Moreover, using dextran molecules of various molecular weights, we also demonstrate that size-based separation can be achieved with a very good selectivity. These new silicon nanosieves offer a relevant technological alternative to commercially available ultra- and microfiltration membranes for conducting high resolution biomolecular separations at small scales.

Boron Nitride Nanotubes: Recent Advances in Their Synthesis, Functionalization, and Applications.

PubMed

Lee, Chee Huei; Bhandari, Shiva; Tiwari, Bishnu; Yapici, Nazmiye; Zhang, Dongyan; Yap, Yoke Khin

2016-07-15

A comprehensive overview of current research progress on boron nitride nanotubes (BNNTs) is presented in this article. Particularly, recent advancements in controlled synthesis and large-scale production of BNNTs will first be summarized. While recent success in mass production of BNNTs has opened up new opportunities to implement the appealing properties in various applications, concerns about product purity and quality still remain. Secondly, we will summarize the progress in functionalization of BNNTs, which is the necessary step for their applications. Additionally, selected potential applications in structural composites and biomedicine will be highlighted.

Structure of Boron Nitride Nanotubes: Tube Closing Vs. Chirality

NASA Technical Reports Server (NTRS)

Srivastava, Deepak; Menon, Madhu

1998-01-01

The structure of boron nitride nanotubes is investigated using a generalized tight-binding molecular dynamics method. It is shown that dynamic relaxation results in a wavelike or "rippled" surface in which the B atoms rotate inward and the N atoms move outward, reminiscent of the surface relaxation of the III-V semiconductors. More importantly, the three different morphologies of the tube closing with flat, conical and amorphous ends, as observed in experiments, are shown to be directly related to the tube chiralities. The abundance of flat end tubes observed in experiments is, thus, shown to be an indication of the greater stability of "zig-zag" BN tubes over the "arm-chair" tubes under experimental conditions.

Counter-rotating cavity solitons in a silicon nitride microresonator

NASA Astrophysics Data System (ADS)

Joshi, Chaitanya; Klenner, Alexander; Okawachi, Yoshitomo; Yu, Mengjie; Luke, Kevin; Ji, Xingchen; Lipson, Michal; Gaeta, Alexander L.

2018-02-01

We demonstrate the generation of counter-rotating cavity solitons in a silicon nitride microresonator using a fixed, single-frequency laser. We demonstrate a dual 3-soliton state with a difference in the repetition rates of the soliton trains that can be tuned by varying the ratio of pump powers in the two directions. Such a system enables a highly compact, tunable dual comb source that can be used for applications such as spectroscopy and distance ranging.

Effect of attrition milling on the reaction sintering of silicon nitride

NASA Technical Reports Server (NTRS)

Herbell, T. P.; Glasgow, T. K.; Yeh, H. C.

1978-01-01

Silicon powder was ground in a steel attrition mill under nitrogen. Air exposed powder was compacted, prefired in helium, and reaction sintered in nitrogen-4 v/o hydrogen. For longer grinding times, oxygen content, surface area and compactability of the powder increased; and both alpha/beta ratio and degreee of nitridation during sintering increased. Iron content remained constant.

Effect of attrition milling on the reaction sintering of silicon nitride

NASA Technical Reports Server (NTRS)

Herbell, T. P.; Glasgow, T. K.; Yeh, H. C.

1978-01-01

Silicon powder was ground in a steel attrition mill under nitrogen. Air-exposed powder was compacted, prefired in helium, and reaction-sintered in nitrogen-4 v/o hydrogen. For longer grinding times, oxygen content, surface area and compactability of the powder increased; and both alpha/beta ratio and degree of nitridation during sintering increased. Iron content remained constant.

Defective boron nitride nanotubes: mechanical properties, electronic structures and failure behaviors

NASA Astrophysics Data System (ADS)

Wang, Huan; Ding, Ning; Zhao, Xian; Wu, Chi-Man Lawrence

2018-03-01

Due to their excellent physical and chemical characteristics, boron nitride nanotubes (BNNTs) are regarded as a complementary addition to carbon nanotubes. Pioneer studies have demonstrated that defects in carbon nanotubes are considered tools for tuning the physical properties of these materials. In the present work, investigation on the mechanical and electronic properties of pristine and defective BNNTs was performed using the density functional theory method. The analysis on the intrinsic strength, stiffness, and failure critical strain of different types of BNNTs was conducted systematically. The computing results showed that the intrinsic strength of BNNTs decreased linearly with the increased Stone-Wales (SW) defect density around the axis. The SW defect density along the axis played a minor role on the changing of mechanical properties of BNNTs. The BNNT with a B vacancy expressed higher intrinsic strength than that of the N vacancy model. The final failure of the pristine BNNTs was due to the fracture of the Type1 bonds under the mechanical strain. Defects like SW or vacancy are served as the initial break site of BNNTs. Applying strain or creating defects are both effective methods for reducing the band gap of BNNTs.

Slow crack growth in sintered silicon nitride

NASA Technical Reports Server (NTRS)

Khandelwal, P. K.; Chang, J.; Heitman, P. W.

1986-01-01

The strength and crack growth characteristics of a sintered silicon nitride were studied at 1000 C. Fractographic analysis of material failing in dynamic fatigue revealed the presence of slow crack growth (SCG) at stressing rates below 6 ksi/min. This material can sustain a 40-ksi flexural stress at 1000 C for 400 h or more but is susceptible to both SCG and creep deformation at higher stress levels. The crack velocity exponent (N) determined both from dynamic and static fatigue experiments lies in a range from 13 to 22. The subcritical crack growth and creep behavior at 1000 C is primarily controlled by the deformation of an intergranular glassy phase.

Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Mahesh; Roul, Basanta; Central Research Laboratory, Bharat Electronics, Bangalore 560013

High-quality GaN epilayers were grown on Si (1 1 1) substrates by molecular beam epitaxy using a new growth process sequence which involved a substrate nitridation at low temperatures, annealing at high temperatures, followed by nitridation at high temperatures, deposition of a low-temperature buffer layer, and a high-temperature overgrowth. The material quality of the GaN films was also investigated as a function of nitridation time and temperature. Crystallinity and surface roughness of GaN was found to improve when the Si substrate was treated under the new growth process sequence. Micro-Raman and photoluminescence (PL) measurement results indicate that the GaN filmmore » grown by the new process sequence has less tensile stress and optically good. The surface and interface structures of an ultra thin silicon nitride film grown on the Si surface are investigated by core-level photoelectron spectroscopy and it clearly indicates that the quality of silicon nitride notably affects the properties of GaN growth.« less

Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern.

PubMed

Han, Nam; Cuong, Tran Viet; Han, Min; Ryu, Beo Deul; Chandramohan, S; Park, Jong Bae; Kang, Ji Hye; Park, Young-Jae; Ko, Kang Bok; Kim, Hee Yun; Kim, Hyun Kyu; Ryu, Jae Hyoung; Katharria, Y S; Choi, Chel-Jong; Hong, Chang-Hee

2013-01-01

The future of solid-state lighting relies on how the performance parameters will be improved further for developing high-brightness light-emitting diodes. Eventually, heat removal is becoming a crucial issue because the requirement of high brightness necessitates high-operating current densities that would trigger more joule heating. Here we demonstrate that the embedded graphene oxide in a gallium nitride light-emitting diode alleviates the self-heating issues by virtue of its heat-spreading ability and reducing the thermal boundary resistance. The fabrication process involves the generation of scalable graphene oxide microscale patterns on a sapphire substrate, followed by its thermal reduction and epitaxial lateral overgrowth of gallium nitride in a metal-organic chemical vapour deposition system under one-step process. The device with embedded graphene oxide outperforms its conventional counterpart by emitting bright light with relatively low-junction temperature and thermal resistance. This facile strategy may enable integration of large-scale graphene into practical devices for effective heat removal.

Foreign Object Damage of Two Gas-Turbine Grade Silicon Nitrides in a Thin Disk Configuration

NASA Technical Reports Server (NTRS)

Choi, Sung R.; Pereira, J. Michael; Janosik, Lesley A.; Bhatt, Ramakrishna T.

2003-01-01

Foreign object damage (FOD) behavior of two commercial gas-turbine grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through post-impact strength testing for thin disks impacted by steel-ball projectiles with a diameter of 1.59 mm in a velocity range from 115 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (K(sub IC)). The critical impact velocity in which the corresponding post-impact strength yielded the lowest value was V(sub c) approx. 440 and 300 m/s for AS800 and SN282, respectively. A unique lower-strength regime was typified for both silicon nitrides depending on impact velocity, attributed to significant radial cracking. The damages generated by projectile impact were typically in the forms of ring, radial, and cone cracks with their severity and combination being dependent on impact velocity. Unlike thick (3 mm) flexure bar specimens used in the previous studies, thin (2 mm) disk target specimens exhibited a unique backside radial cracking occurring on the reverse side just beneath the impact sites at and above impact velocity of 160 and 220 m/s for SN282 and AS800, respectively.

Quantitative Mapping of Pore Fraction Variations in Silicon Nitride Using an Ultrasonic Contact Scan Technique

NASA Technical Reports Server (NTRS)

Roth, Don J.; Kiser, James D.; Swickard, Suzanne M.; Szatmary, Steven A.; Kerwin, David P.

1993-01-01

An ultrasonic scan procedure using the pulse-echo contact configuration was employed to obtain maps of pore fraction variations in sintered silicon nitride samples in terms of ultrasonic material properties. Ultrasonic velocity, attenuation coefficient, and reflection coefficient images were obtained simultaneously over a broad band of frequencies (e.g., 30 to 110 MHz) by using spectroscopic analysis. Liquid and membrane (dry) coupling techniques and longitudinal and shear-wave energies were used. The major results include the following: Ultrasonic velocity (longitudinal and shear wave) images revealed and correlated with the extent of average through-thickness pore fraction variations in the silicon nitride disks. Attenuation coefficient images revealed pore fraction nonuniformity due to the scattering that occurred at boundaries between regions of high and low pore fraction. Velocity and attenuation coefficient images were each nearly identical for machined and polished disks, making the method readily applicable to machined materials. Velocity images were similar for wet and membrane coupling. Maps of apparent Poisson's ratio constructed from longitudinal and shear-wave velocities quantified Poisson's ratio variations across a silicon nitride disk. Thermal wave images of a disk indicated transient thermal behavior variations that correlated with observed variations in pore fraction and velocity and attenuation coefficients.

Investigation of Oxygen and Hydrogen Associated Charge Trapping and Electrical Characteristics of Silicon Nitride Films for Mnos Devices.

NASA Astrophysics Data System (ADS)

Xu, Dan

Silicon nitride (Si_3N _4) and silicon oxynitride (SiO _{rm x}N_ {rm y}) films in the form of metal -nitride-oxide-silicon (MNOS) structures were investigated to determine the correlation between their electrical characteristics and the nature of the chemical bonding so as to provide guidelines for the next generation of nonvolatile memory devices. The photoionization cross section of electron traps in the oxynitride films of MNOS devices were also measured as a function photon energy and oxygen concentration of the silicon oxynitride films. An effective photoionization cross section associated with electron traps was determined to be between 4.9 times 10 ^{-19} cm^2 to 10.8 times 10^ {-19} cm^2 over the photon energy of 2.06 eV to 3.1 eV for silicon oxynitride films containing 7 atomic % to 17 atomic % of oxygen. The interface state density of metal-nitride-oxide -silicon (MNOS) devices was investigated as a function of processing conditions. The interface state density around the midgap of the oxide-silicon interface of the MNOS structures for deposition temperature between 650^ circC to 850^circC increased from 1.1 to 8.2 times 10 ^{11} cm^ {-2}eV^{-1}, for as-deposited silicon nitride films; but decreased from 5.0 to 3.5 times 10^ {11} cm^{-2} eV^{-1}, for films annealed in nitrogen at 900^circC for 60 minutes; and further decreased and remained constant at 1.5 times 10^{11 } cm^{-2}eV ^{-1}, for films which were further annealed in hydrogen at 900^ circC for an additional 60 minutes. The interface state density increase was due to an increase in the loss of hydrogen at the interfacial region and also due to an increase in the thermal stress caused by differences in thermal expansion coefficients of silicon nitride and silicon dioxide films at higher deposition temperatures. The interface state density was subject to two opposing influences; an increase by thermal stress, and a reduction by hydrogen compensation of these states. The photocurrent-voltage (photo

Experimental study of three-dimensional fin-channel charge trapping flash memories with titanium nitride and polycrystalline silicon gates

NASA Astrophysics Data System (ADS)

Liu, Yongxun; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Mizubayashi, Wataru; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Masahara, Meishoku

2014-01-01

Three-dimensional (3D) fin-channel charge trapping (CT) flash memories with different gate materials of physical-vapor-deposited (PVD) titanium nitride (TiN) and n+-polycrystalline silicon (poly-Si) have successfully been fabricated by using (100)-oriented silicon-on-insulator (SOI) wafers and orientation-dependent wet etching. Electrical characteristics of the fabricated flash memories including statistical threshold voltage (Vt) variability, endurance, and data retention have been comparatively investigated. It was experimentally found that a larger memory window and a deeper erase are obtained in PVD-TiN-gated metal-oxide-nitride-oxide-silicon (MONOS)-type flash memories than in poly-Si-gated poly-Si-oxide-nitride-oxide-silicon (SONOS)-type memories. The larger memory window and deeper erase of MONOS-type flash memories are contributed by the higher work function of the PVD-TiN metal gate than of the n+-poly-Si gate, which is effective for suppressing electron back tunneling during erase operation. It was also found that the initial Vt roll-off due to the short-channel effect (SCE) is directly related to the memory window roll-off when the gate length (Lg) is scaled down to 46 nm or less.

Investigation of magnetism in aluminum-doped silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Behzad, Somayeh; Chegel, Raad

2013-11-01

The effect of aluminum doping on the structural, electronic and magnetic properties of (8,0) silicon carbide nanotube (SiCNT) is investigated using spin-polarized density functional theory. It is found from the calculation of the formation energies that aluminum substitution for silicon atom is preferred. Our results show that the magnetization depends on the substitutional site, aluminum substitution at silicon site does not introduce any spin-polarization, whereas the aluminum substitution for carbon atom yields a spin polarized, almost dispersionless π band within the original band gap.

Extraction of Boron Nitride Nanotubes and Fabrication of Macroscopic Articles Using Chlorosulfonic Acid.

PubMed

Adnan, Mohammed; Marincel, Daniel M; Kleinerman, Olga; Chu, Sang-Hyon; Park, Cheol; Hocker, Samuel J A; Fay, Catharine; Arepalli, Sivaram; Talmon, Yeshayahu; Pasquali, Matteo

2018-03-14

Due to recent advances in high-throughput synthesis, research on boron nitride nanotubes (BNNTs) is moving toward applications. One future goal is the assembly of macroscopic articles of high-aspect-ratio, pristine BNNTs. However, these articles are presently unattainable because of insufficient purification and fabrication methods. We introduce a solution process for extracting BNNTs from synthesis impurities without sonication or the use of surfactants and proceed to convert the extracted BNNTs into thin films. The solution process can also be used to convert as-synthesized material-which contains significant amounts of hexagonal boron nitride ( h-BN)-into mats and aerogels with controllable structure and dimension. The solution extraction method, combined with further advances in synthesis and purification, contributes to the development of all-BNNT macroscopic articles, such as fibers and 3-D structures.

Non-carbon titanium cobalt nitride nanotubes supported platinum catalyst with high activity and durability for methanol oxidation reaction

NASA Astrophysics Data System (ADS)

Chen, Xiaoxiang; Li, Wuyi; Pan, Zhanchang; Xu, Yanbin; Liu, Gen; Hu, Guanghui; Wu, Shoukun; Li, Jinghong; Chen, Chun; Lin, Yingsheng

2018-05-01

Titanium cobalt nitride nanotubes (Ti0.95Co0.05N NTs) hybrid support, a novel robust non-carbon support material prepared by solvothermal and post-nitriding processes, is further decorated with Pt nanoparticles for the electrooxidation of methanol. The catalyst is characterized by X-ray diffraction (XRD), nitrogen adsorption/desorption, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and electrochemical measurements. The morphology, structure and composition of the synthesized Ti0.95Co0.05N NTs suggest that the nanotube wall is porous and consists of homogeneous cohesively attached nitrides nanocube particles. Notable, Ti0.95Co0.05N NTs supported Pt catalyst exhibits significantly improved catalytic activity and durability for methanol electrooxidation compared with the conventional JM Pt/C catalyst. The experimental data indicate that enhanced catalytic activity and stability of Pt/Ti0.95Co0.05N NTs towards methanol electrooxidation might be mainly attributed to the tubular nanostructures and synergistic effect introduced by the Co doping. Both of them are playing an important role in improving the activity and durability of the Ti0.95Co0.05N NTs catalyst.

Bend strengths of reaction bonded silicon nitride prepared from dry attrition milled silicon powder

NASA Technical Reports Server (NTRS)

Herbell, T. P.; Glasgow, T. K.

1979-01-01

Dry attrition milled silicon powder was compacted, sintered in helium, and reaction bonded in nitrogen-4 volume percent hydrogen. Bend strengths of bars with as-nitrided surfaces averaged as high as 210 MPa at room temperature and 220 MPa at 1400 C. Bars prepared from the milled powder were stronger than those prepared from as-received powder at both room temperature and at 1400 C. Room temperature strength decreased with increased milling time and 1400 C strength increased with increased milling time.

Interfacial Thermal Conductance Limit and Thermal Rectification Across Vertical Carbon Nanotube/Graphene Nanoribbon-Silicon Interfaces

DTIC Science & Technology

2013-01-01

Interfacial thermal conductance limit and thermal rectification across vertical carbon nanotube/graphene nanoribbon-silicon interfaces Ajit K...054308 (2013) Investigation on interfacial thermal resistance and phonon scattering at twist boundary of silicon J. Appl. Phys. 113, 053513 (2013...2013 to 00-00-2013 4. TITLE AND SUBTITLE Interfacial thermal conductance limit and thermal rectification across vertical carbon nanotube/graphene

Slurry-pressing consolidation of silicon nitride

NASA Technical Reports Server (NTRS)

Sanders, William A.; Kiser, James D.; Freedman, Marc R.

1988-01-01

A baseline slurry-pressing method for a silicon nitride material is developed. The Si3N4 composition contained 5.8 wt percent SiO2 and 6.4 wt percent Y2O3. Slurry-pressing variables included volume percent solids, application of ultrasonic energy, and pH. Twenty vol percent slurry-pressed material was approximately 11 percent stronger than both 30 vol percent slurry-pressed and dry-pressed materials. The Student's t-test showed the difference to be significant at the 99 percent confidence level. Twenty volume percent (300 h) slurry-pressed test bars exhibited strengths as high as 980 MPa. Large, columnar beta-Si3N4 grains caused failure in the highest strength specimens. The improved strength correlated with better structural uniformity as determined by radiography, optical microscopy, and image analysis.

Multisite silicon neural probes with integrated silicon nitride waveguides and gratings for optogenetic applications.

PubMed

Shim, Euijae; Chen, Yu; Masmanidis, Sotiris; Li, Mo

2016-03-04

Optimal optogenetic perturbation of brain circuit activity often requires light delivery in a precise spatial pattern that cannot be achieved with conventional optical fibers. We demonstrate an implantable silicon-based probe with a compact light delivery system, consisting of silicon nitride waveguides and grating couplers for out-of-plane light emission with high spatial resolution. 473 nm light is coupled into and guided in cm-long waveguide and emitted at the output grating coupler. Using the direct cut-back and out-scattering measurement techniques, the propagation optical loss of the waveguide is measured to be below 3 dB/cm. The grating couplers provide collimated light emission with sufficient irradiance for neural stimulation. Finally, a probe with multisite light delivery with three output grating emitters from a single laser input is demonstrated.

Remote Joule heating by a carbon nanotube.

PubMed

Baloch, Kamal H; Voskanian, Norvik; Bronsgeest, Merijntje; Cumings, John

2012-04-08

Minimizing Joule heating remains an important goal in the design of electronic devices. The prevailing model of Joule heating relies on a simple semiclassical picture in which electrons collide with the atoms of a conductor, generating heat locally and only in regions of non-zero current density, and this model has been supported by most experiments. Recently, however, it has been predicted that electric currents in graphene and carbon nanotubes can couple to the vibrational modes of a neighbouring material, heating it remotely. Here, we use in situ electron thermal microscopy to detect the remote Joule heating of a silicon nitride substrate by a single multiwalled carbon nanotube. At least 84% of the electrical power supplied to the nanotube is dissipated directly into the substrate, rather than in the nanotube itself. Although it has different physical origins, this phenomenon is reminiscent of induction heating or microwave dielectric heating. Such an ability to dissipate waste energy remotely could lead to improved thermal management in electronic devices.

Remote Joule heating by a carbon nanotube

NASA Astrophysics Data System (ADS)

Baloch, Kamal H.; Voskanian, Norvik; Bronsgeest, Merijntje; Cumings, John

2012-05-01

Minimizing Joule heating remains an important goal in the design of electronic devices. The prevailing model of Joule heating relies on a simple semiclassical picture in which electrons collide with the atoms of a conductor, generating heat locally and only in regions of non-zero current density, and this model has been supported by most experiments. Recently, however, it has been predicted that electric currents in graphene and carbon nanotubes can couple to the vibrational modes of a neighbouring material, heating it remotely. Here, we use in situ electron thermal microscopy to detect the remote Joule heating of a silicon nitride substrate by a single multiwalled carbon nanotube. At least 84% of the electrical power supplied to the nanotube is dissipated directly into the substrate, rather than in the nanotube itself. Although it has different physical origins, this phenomenon is reminiscent of induction heating or microwave dielectric heating. Such an ability to dissipate waste energy remotely could lead to improved thermal management in electronic devices.

Tensile strength of aluminium nitride films

NASA Astrophysics Data System (ADS)

Zong, Deng Gang; Ong, Chung Wo; Aravind, Manju; Tsang, Mei Po; Loong Choy, Chung; Lu, Deren; Ma, Dejun

2004-11-01

Two-layered aluminium nitride (AlN)/silicon nitride microbridges were fabricated for microbridge tests to evaluate the elastic modulus, residual stress and tensile strength of the AlN films. The silicon nitride layer was added to increase the robustness of the structure. In a microbridge test, load was applied to the centre of a microbridge and was gradually increased by a nano-indenter equipped with a wedge tip until the sample was broken, while displacement was recorded coherently. Measurements were performed on single-layered silicon nitride microbridges and two-layered AlN/silicon nitride microbridges respectively. The data were fitted to a theory to derive the elastic modulus, residual stress and tensile strength of the silicon nitride films and AlN films. For the AlN films, the three parameters were determined to be 200, 0.06 and 0.3 GPa, respectively. The values of elastic modulus obtained were consistent with those measured by conventional nano-indentation method. The tensile strength value can be used as a reference to reflect the maximum tolerable tensile stress of AlN films when they are used in micro-electromechanical devices.

Nanotube phonon waveguide

DOEpatents

Chang, Chih-Wei; Zettl, Alexander K.

2013-10-29

Disclosed are methods and devices in which certain types of nanotubes (e.g., carbon nanotubes and boron nitride nanotubes conduct heat with high efficiency and are therefore useful in electronic-type devices.

Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jin, Sung Hun, E-mail: harin74@gmail.com, E-mail: jhl@snu.ac.kr, E-mail: jrogers@illinois.edu; Shin, Jongmin; Cho, In-Tak

2014-07-07

This paper presents materials, device designs, and physical/electrical characteristics of a form of nanotube electronics that is physically transient, in the sense that all constituent elements dissolve and/or disperse upon immersion into water. Studies of contact effects illustrate the ability to use water soluble metals such as magnesium for source/drain contacts in nanotube based field effect transistors. High mobilities and on/off ratios in transistors that use molybdenum, silicon nitride, and silicon oxide enable full swing characteristics for inverters at low voltages (∼5 V) and with high gains (∼30). Dissolution/disintegration tests of such systems on water soluble sheets of polyvinyl alcohol demonstratemore » physical transience within 30 min.« less

Effect of Silicon Nitride Balls and Rollers on Rolling Bearing Life

NASA Technical Reports Server (NTRS)

Zaretsky, Erwin V.; Vlcek, Brian L.; Hendricks, Robert C.

2005-01-01

Three decades have passed since the introduction of silicon nitride rollers and balls into conventional rolling-element bearings. For a given applied load, the contact (Hertz) stress in a hybrid bearing will be higher than an all-steel rolling-element bearing. The silicon nitride rolling-element life as well as the lives of the steel races were used to determine the resultant bearing life of both hybrid and all-steel bearings. Life factors were determined and reported for hybrid bearings. Under nominal operating speeds, the resultant calculated lives of the deep-groove, angular-contact, and cylindrical roller hybrid bearings with races made of post-1960 bearing steel increased by factors of 3.7, 3.2, and 5.5, respectively, from those calculated using the Lundberg-Palmgren equations. An all-steel bearing under the same load will have a longer life than the equivalent hybrid bearing under the same conditions. Under these conditions, hybrid bearings are predicted to have a lower fatigue life than all-steel bearings by 58 percent for deep-groove bearings, 41 percent for angular-contact bearings, and 28 percent for cylindrical roller bearings.

Processing and testing of high toughness silicon nitride ceramics

NASA Technical Reports Server (NTRS)

Tikare, Veena; Sanders, William A.; Choi, Sung R.

1993-01-01

High toughness silicon nitride ceramics were processed with the addition of small quantities of beta-Si3N4 whiskers in a commercially available alpha-Si3N4 powder. These whiskers grew preferentially during sintering resulting in large, elongated beta-grains, which acted to toughen the matrix by crack deflection and grain pullout. The fracture toughness of these samples seeded with beta-Si3N4 whiskers ranged from 8.7 to 9.5 MPa m(exp 0.5) depending on the sintering additives.

Dynamic and static fatigue behavior of sintered silicon nitrides

NASA Technical Reports Server (NTRS)

Chang, J.; Khandelwal, P.; Heitman, P. W.

1987-01-01

The dynamic and static fatigue behavior of Kyocera SN220M sintered silicon nitride at 1000 C was studied. Fractographic analysis of the material failing in dynamic fatigue revealed the presence of slow crack growth (SCG) at stressing rates below 41 MPa/min. Under conditions of static fatigue this material also displayed SCG at stresses below 345 MPa. SCG appears to be controlled by microcracking of the grain boundaries. The crack velocity exponent (n) determined from both dynamic and static fatigue tests ranged from 11 to 16.

Adsorption of nucleic acid bases and amino acids on single-walled carbon and boron nitride nanotubes: a first-principles study.

PubMed

Zheng, Jiaxin; Song, Wei; Wang, Lu; Lu, Jing; Luo, Guangfu; Zhou, Jing; Qin, Rui; Li, Hong; Gao, Zhengxiang; Lai, Lin; Li, Guangping; Mei, Wai Ning

2009-11-01

We study the adsorptions of nucleic acid bases adenine (A), cytosine (C), guanine (G), thymine (T), and uracil (U) and four amino acids phenylalanine, tyrosine, tryptophan, alanine on the single-walled carbon nanotubes (SWCNTs) and boron nitride nanotubes (SWBNNTs) by using density functional theory. We find that the aromatic content plays a critical role in the adsorption. The adsorptions of nucleic acid bases and amino acids on the (7, 7) SWBNNT are stronger than those on the (7, 7) SWCNT. Oxidative treatment of SWCNTs favors the adsorption of biomolecules on nanotubes.

Hydrogenated amorphous silicon nitride photonic crystals for improved-performance surface electromagnetic wave biosensors.

PubMed

Sinibaldi, Alberto; Descrovi, Emiliano; Giorgis, Fabrizio; Dominici, Lorenzo; Ballarini, Mirko; Mandracci, Pietro; Danz, Norbert; Michelotti, Francesco

2012-10-01

We exploit the properties of surface electromagnetic waves propagating at the surface of finite one dimensional photonic crystals to improve the performance of optical biosensors with respect to the standard surface plasmon resonance approach. We demonstrate that the hydrogenated amorphous silicon nitride technology is a versatile platform for fabricating one dimensional photonic crystals with any desirable design and operating in a wide wavelength range, from the visible to the near infrared. We prepared sensors based on photonic crystals sustaining either guided modes or surface electromagnetic waves, also known as Bloch surface waves. We carried out for the first time a direct experimental comparison of their sensitivity and figure of merit with surface plasmon polaritons on metal layers, by making use of a commercial surface plasmon resonance instrument that was slightly adapted for the experiments. Our measurements demonstrate that the Bloch surface waves on silicon nitride photonic crystals outperform surface plasmon polaritons by a factor 1.3 in terms of figure of merit.

Formation of boron nitride coatings on silicon carbide fibers using trimethylborate vapor

NASA Astrophysics Data System (ADS)

Yuan, Mengjiao; Zhou, Tong; He, Jing; Chen, Lifu

2016-09-01

High quality boron nitride (BN) coatings have been grown on silicon carbide (SiC) fibers by carbothermal nitridation and at atmospheric pressure. SiC fibers were first treated in chlorine gas to form CDC (carbide-derived carbon) film on the fiber surface. The CDC-coated SiC fibers were then reacted with trimethylborate vapor and ammonia vapor at high temperature, forming BN coatings by carbothermal reduction. The FT-IR, XPS, XRD, SEM, TEM and AES were used to investigate the formation of the obtained coatings. It has been found that the obtained coatings are composed of phase mixture of h-BN and amorphous carbon, very uniform in thickness, have smooth surface and adhere well with the SiC fiber substrates. The BN-coated SiC fibers retain ∼80% strength of the as-received SiC fibers and show an obvious interfacial debonding and fiber pullout in the SiCf/SiOC composites. This method may be useful for the large scale production of high quality BN coating on silicon carbide fiber.

Nanotube Surface Arrays: Weaving, Bending, and Assembling on Patterned Silicon

NASA Astrophysics Data System (ADS)

Tsukruk, Vladimir V.; Ko, Hyunhyub; Peleshanko, Sergiy

2004-02-01

We report the fabrication of ordered arrays of oriented and bent carbon nanotube on a patterned silicon surface with a micron scale spacing extending over millimeter size surface areas. We suggest that the patterning is controlled by the hydrodynamic behavior of a fluid front and orientation and bending mechanisms are facilitated by the pinned carbon nanotubes trapped by the liquid-solid-vapor contact line. The bending of the pinned nanotubes occurs along the shrinking receding front of the drying microdroplets. The formation of stratified microfluidic layers is vital for stimulating periodic instabilities of the contact line.

Chemical Interaction-Guided, Metal-Free Growth of Large-Area Hexagonal Boron Nitride on Silicon-Based Substrates.

PubMed

Behura, Sanjay; Nguyen, Phong; Debbarma, Rousan; Che, Songwei; Seacrist, Michael R; Berry, Vikas

2017-05-23

Hexagonal boron nitride (h-BN) is an ideal platform for interfacing with two-dimensional (2D) nanomaterials to reduce carrier scattering for high-quality 2D electronics. However, scalable, transfer-free growth of hexagonal boron nitride (h-BN) remains a challenge. Currently, h-BN-based 2D heterostructures require exfoliation or chemical transfer of h-BN grown on metals resulting in small areas or significant interfacial impurities. Here, we demonstrate a surface-chemistry-influenced transfer-free growth of large-area, uniform, and smooth h-BN directly on silicon (Si)-based substrates, including Si, silicon nitride (Si 3 N 4 ), and silicon dioxide (SiO 2 ), via low-pressure chemical vapor deposition. The growth rates increase with substrate electronegativity, Si < Si 3 N 4 < SiO 2 , consistent with the adsorption rates calculated for the precursor molecules via atomistic molecular dynamics simulations. Under graphene with high grain density, this h-BN film acts as a polymer-free, planar-dielectric interface increasing carrier mobility by 3.5-fold attributed to reduced surface roughness and charged impurities. This single-step, chemical interaction guided, metal-free growth mechanism of h-BN for graphene heterostructures establishes a potential pathway for the design of complex and integrated 2D-heterostructured circuitry.

Fabrication of Antireflective Sub-Wavelength Structures on Silicon Nitride Using Nano Cluster Mask for Solar Cell Application

PubMed Central

2009-01-01

We have developed a simple and scalable approach for fabricating sub-wavelength structures (SWS) on silicon nitride by means of self-assembled nickel nanoparticle masks and inductively coupled plasma (ICP) ion etching. Silicon nitride SWS surfaces with diameter of 160–200 nm and a height of 140–150 nm were obtained. A low reflectivity below 1% was observed over wavelength from 590 to 680 nm. Using the measured reflectivity data in PC1D, the solar cell characteristics has been compared for single layer anti-reflection (SLAR) coatings and SWS and a 0.8% improvement in efficiency has been seen. PMID:20596409

Silicon nitride films fabricated by a plasma-enhanced chemical vapor deposition method for coatings of the laser interferometer gravitational wave detector

NASA Astrophysics Data System (ADS)

Pan, Huang-Wei; Kuo, Ling-Chi; Huang, Shu-Yu; Wu, Meng-Yun; Juang, Yu-Hang; Lee, Chia-Wei; Chen, Hsin-Chieh; Wen, Ting Ting; Chao, Shiuh

2018-01-01

Silicon is a potential substrate material for the large-areal-size mirrors of the next-generation laser interferometer gravitational wave detector operated in cryogenics. Silicon nitride thin films uniformly deposited by a chemical vapor deposition method on large-size silicon wafers is a common practice in the silicon integrated circuit industry. We used plasma-enhanced chemical vapor deposition to deposit silicon nitride films on silicon and studied the physical properties of the films that are pertinent to application of mirror coatings for laser interferometer gravitational wave detectors. We measured and analyzed the structure, optical properties, stress, Young's modulus, and mechanical loss of the films, at both room and cryogenic temperatures. Optical extinction coefficients of the films were in the 10-5 range at 1550-nm wavelength. Room-temperature mechanical loss of the films varied in the range from low 10-4 to low 10-5 within the frequency range of interest. The existence of a cryogenic mechanical loss peak depended on the composition of the films. We measured the bond concentrations of N - H , Si - H , Si - N , and Si - Si bonds in the films and analyzed the correlations between bond concentrations and cryogenic mechanical losses. We proposed three possible two-level systems associated with the N - H , Si - H , and Si - N bonds in the film. We inferred that the dominant source of the cryogenic mechanical loss for the silicon nitride films is the two-level system of exchanging position between a H+ and electron lone pair associated with the N - H bond. Under our deposition conditions, superior properties in terms of high refractive index with a large adjustable range, low optical absorption, and low mechanical loss were achieved for films with lower nitrogen content and lower N - H bond concentration. Possible pairing of the silicon nitride films with other materials in the quarter-wave stack is discussed.

Integrated Rig for the Production of Boron Nitride Nanotubes via the Pressurized Vapor-Condenser Method

NASA Technical Reports Server (NTRS)

Smith, Michael W. (Inventor); Jordan, Kevin C. (Inventor)

2014-01-01

An integrated production apparatus for production of boron nitride nanotubes via the pressure vapor-condenser method. The apparatus comprises: a pressurized reaction chamber containing a continuously fed boron containing target having a boron target tip, a source of pressurized nitrogen and a moving belt condenser apparatus; a hutch chamber proximate the pressurized reaction chamber containing a target feed system and a laser beam and optics.

Integrated rig for the production of boron nitride nanotubes via the pressurized vapor-condenser method

DOEpatents

Smith, Michael W; Jordan, Kevin C

2014-03-25

An integrated production apparatus for production of boron nitride nanotubes via the pressure vapor-condenser method. The apparatus comprises: a pressurized reaction chamber containing a continuously fed boron containing target having a boron target tip, a source of pressurized nitrogen and a moving belt condenser apparatus; a hutch chamber proximate the pressurized reaction chamber containing a target feed system and a laser beam and optics.

Formation of porous surface layers in reaction bonded silicon nitride during processing

NASA Technical Reports Server (NTRS)

Shaw, N. J.; Glasgow, T. K.

1979-01-01

Microstructural examination of reaction bonded silicon nitride (RBSN) has shown that there is often a region adjacent to the as-nitrided surfaces that is even more porous than the interior of this already quite porous material. Because this layer of large porosity is considered detrimental to both the strength and oxidation resistance of RBSN, a study was undertaken to determine if its formation could be prevented during processing. All test bars studied were made from a single batch of Si powder which was milled for 4 hours in heptane in a vibratory mill using high density alumina cylinders as the grinding media. After air drying the powder, bars were compacted in a single acting die and hydropressed.

Oxidation Protection of Porous Reaction-Bonded Silicon Nitride

NASA Technical Reports Server (NTRS)

Fox, D. S.

1994-01-01

Oxidation kinetics of both as-fabricated and coated reaction-bonded silicon nitride (RBSN) were studied at 900 and 1000 C with thermogravimetry. Uncoated RBSN exhibited internal oxidation and parabolic kinetics. An amorphous Si-C-O coating provided the greatest degree of protection to oxygen, with a small linear weight loss observed. Linear weight gains were measured on samples with an amorphous Si-N-C coating. Chemically vapor deposited (CVD) Si3N4 coated RBSN exhibited parabolic kinetics, and the coating cracked severely. A continuous-SiC-fiber-reinforced RBSN composite was also coated with the Si-C-O material, but no substantial oxidation protection was observed.

Electrically Detected Study of Variable Range Hopping in Silicon Nitrides

NASA Astrophysics Data System (ADS)

Waskiewicz, Ryan; Mutch, Michael; Lenahan, Patrick; King, Sean

Electrically detected magnetic resonance (EDMR) offers greatly improved sensitivity over conventional electron paramagnetic resonance (EPR) studies in semiconductor/insulator systems; in EDMR measurements, one observes EPR via changes in device currents which are spin-dependent. In our study, we observe EDMR via spin-dependent trap assisted tunneling (SDTAT) via variable range hopping (VRH) through stoichiometric silicon nitride dielectric films. In these films, leakage current effectively changes at resonance. In our study, we have investigated the EDMR response as a function of dielectric electric field and temperature for films of various thicknesses. We believe that these measurements allow us to identify the defects responsible for transport in such these thin films using EDMR and to some extent measure the distances between the defects. The separation between the defects can, at least in principle, be measured using the recently demonstrated half-field EDMR response and we can also count total number of spins responsible for transport through dielectric films. Although we present results only on silicon nitride thin films, we believe that the approach utilized will be widely applicable to other dielectric films in which electronic transport is of interest. This project is sponsored in part by Intel Corporation and in part by the Department of Defense, Defense Threat Reduction Agency under Grant Number HDTRA1-16-0008.

Fabricating capacitive micromachined ultrasonic transducers with a novel silicon-nitride-based wafer bonding process.

PubMed

Logan, Andrew; Yeow, John T W

2009-05-01

We report the fabrication and experimental testing of 1-D 23-element capacitive micromachined ultrasonic transducer (CMUT) arrays that have been fabricated using a novel wafer-bonding process whereby the membrane and the insulation layer are both silicon nitride. The membrane and cell cavities are deposited and patterned on separate wafers and fusion-bonded in a vacuum environment to create CMUT cells. A user-grown silicon-nitride membrane layer avoids the need for expensive silicon-on-insulator (SOI) wafers, reduces parasitic capacitance, and reduces dielectric charging. It allows more freedom in selecting the membrane thickness while also providing the benefits of wafer-bonding fabrication such as excellent fill factor, ease of vacuum sealing, and a simplified fabrication process when compared with the more standard sacrificial release process. The devices fabricated have a cell diameter of 22 microm, a membrane thickness of 400 nm, a gap depth of 150 nm, and an insulation thickness of 250 nm. The resonant frequency of the CMUT in air is 17 MHz and has an attenuation compensated center frequency of approximately 9 MHz in immersion with a -6 dB fractional bandwidth of 123%. This paper presents the fabrication process and some characterization results.

Experimental identification of p-type conduction in fluoridized boron nitride nanotube

NASA Astrophysics Data System (ADS)

Zhao, Jing; Li, Wuxia; Tang, Chengchun; Li, Lin; Lin, Jing; Gu, Changzhi

2013-04-01

The transport properties of F-doped boron nitride nanotube (BNNT) top-gate field effect devices were investigated to demonstrate the realization of p-type BNNTs by F-doping. The drain current was found to increase substantially with the applied negative gate voltage, suggesting these devices persist significant field effect with holes predominated; it also suggests that F-doping remarkably modified the band gap with F atoms preferred to be absorbed on B sites. Parameters, including the resistivity, charge concentration, and mobility, were further retrieved from the I-V curves. Our results indicate that device characterization is an effective method to reveal the specific properties of BNNTs.

Uniaxial magnetic anisotropy energy of Fe wires embedded in carbon nanotubes.

PubMed

Muñoz, Francisco; Mejía-López, Jose; Pérez-Acle, Tomas; Romero, Aldo H

2010-05-25

In this work, we analyze the magnetic anisotropy energy (MAE) of Fe cylinders embedded within zigzag carbon nanotubes, by means of ab initio calculations. To see the influence of the confinement, we fix the Fe cylinder diameter and we follow the changes of the MAE as a function of the diameter of the nanotube, which contains the Fe cylinder. We find that the easy axis changes from parallel to perpendicular, with respect to the cylinder axis. The orientation change depends quite strongly on the confinement, which indicates a nontrivial dependence of the magnetization direction as function of the nanotube diameter. We also find that the MAE is affected by where the Fe cylinder sits with respect to the carbon nanotube, and the coupling between these two structures could also dominate the magnetic response. We analyze the thermal stability of the magnetization orientation of the Fe cylinder close to room temperature.

Folate-grafted boron nitride nanotubes: possible exploitation in cancer therapy.

PubMed

Ferreira, Tiago H; Marino, Attilio; Rocca, Antonella; Liakos, Ioannis; Nitti, Simone; Athanassiou, Athanassia; Mattoli, Virgilio; Mazzolai, Barbara; de Sousa, Edesia M B; Ciofani, Gianni

2015-03-15

Boron nitride nanotubes (BNNTs) have generated considerable interest among the scientific community because of their unique physical and chemical properties. They present good chemical inertness, high thermal stability, and optimal resistance to oxidation, that make them ideal candidates for biomedical applications, in particular as nanovectors for drug, gene and protein delivery into the cells. In this study, BNNTs were prepared through a synthesis based on a chemical vapor deposition (CVD) method, and thereafter chemically functionalized with folic acid. The obtained nanostructures have been characterized by Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), thermogravimetric analysis (TGA), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The characterization showed efficiently functionalized BNNTs of length of about 1 μm. Furthermore, confocal laser microscopy demonstrated that our nanotubes can be fluorescently-traced under appropriate excitation. Thanks to this property, it has been possible to investigate their internalization by HeLa cells through confocal microscopy, demonstrating that the BNNT up-take clearly increases after the functionalization with folate, a result confirmed by inductively coupled plasma (ICP) assessment of boron content inside the treated cell cultures. Copyright © 2015 Elsevier B.V. All rights reserved.

Surface wet-ability modification of thin PECVD silicon nitride layers by 40 keV argon ion treatments

NASA Astrophysics Data System (ADS)

Caridi, F.; Picciotto, A.; Vanzetti, L.; Iacob, E.; Scolaro, C.

2015-10-01

Measurements of wet-ability of liquid drops have been performed on a 30 nm silicon nitride (Si3N4) film deposited by a PECVD reactor on a silicon wafer and implanted by 40 keV argon ions at different doses. Surface treatments by using Ar ion beams have been employed to modify the wet-ability. The chemical composition of the first Si3N4 monolayer was investigated by means of X-ray Photoelectron Spectroscopy (XPS). The surface morphology was tested by Atomic Force Microscopy (AFM). Results put in evidence the best implantation conditions for silicon nitride to increase or to reduce the wet-ability of the biological liquid. This permits to improve the biocompatibility and functionality of Si3N4. In particular experimental results show that argon ion bombardment increases the contact angle, enhances the oxygen content and increases the surface roughness.

Formation mechanisms of Si3N4 and Si2N2O in silicon powder nitridation

NASA Astrophysics Data System (ADS)

Yao, Guisheng; Li, Yong; Jiang, Peng; Jin, Xiuming; Long, Menglong; Qin, Haixia; Kumar, R. Vasant

2017-04-01

Commercial silicon powders are nitrided at constant temperatures (1453 K; 1513 K; 1633 K; 1693 K). The X-ray diffraction results show that small amounts of Si3N4 and Si2N2O are formed as the nitridation products in the samples. Fibroid and short columnar Si3N4 are detected in the samples. The formation mechanisms of Si3N4 and Si2N2O are analyzed. During the initial stage of silicon powder nitridation, Si on the outside of sample captures slight amount of O2 in N2 atmosphere, forming a thin film of SiO2 on the surface which seals the residual silicon inside. And the oxygen partial pressure between the SiO2 film and free silicon is decreasing gradually, so passive oxidation transforms to active oxidation and metastable SiO(g) is produced. When the SiO(g) partial pressure is high enough, the SiO2 film will crack, and N2 is infiltrated into the central section of the sample through cracks, generating Si2N2O and short columnar Si3N4 in situ. At the same time, metastable SiO(g) reacts with N2 and form fibroid Si3N4. In the regions where the oxygen partial pressure is high, Si3N4 is oxidized into Si2N2O.

One-step preparation of multiwall carbon nanotube/silicon hybrids for solar energy conversion

NASA Astrophysics Data System (ADS)

Lobiak, Egor V.; Bychanok, Dzmitry S.; Shlyakhova, Elena V.; Kuzhir, Polina P.; Maksimenko, Sergey A.; Bulusheva, Lyubov G.; Okotrub, Alexander V.

2016-03-01

The hybrid material consisting of a thin layer of multiwall carbon nanotubes (MWCNTs) on an n-doped silicon wafer was obtained in one step using an aerosol-assisted catalytic chemical vapor deposition. The MWCNTs were grown from a mixture of acetone and ethanol with ˜0.2 wt.% of iron polyoxomolybdate nanocluster of the keplerate-type structure. The samples produced at 800°C and 1050°C were tested as a solar energy converter. It was shown that photoresponse of the hybrid material significantly depends on the presence of structural defects in MWCNTs, being much higher in the case of more defective nanotubes. This is because defects lead to p-doping of nanotubes, whereas the p-n heterojunction between MWCNTs and silicon provides a high efficiency of the solar cell.

Heterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon.

PubMed

Chang, Lin; Pfeiffer, Martin H P; Volet, Nicolas; Zervas, Michael; Peters, Jon D; Manganelli, Costanza L; Stanton, Eric J; Li, Yifei; Kippenberg, Tobias J; Bowers, John E

2017-02-15

An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si₃N₄) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propagation loss in both the Si₃N₄ and the LN-Si₃N₄ waveguides. The tapers enable low-loss-mode transitions between these two waveguides. This platform is essential for various on-chip applications, e.g., modulators, frequency conversions, and quantum communications.

Crystallization of the glassy phase of grain boundaries in silicon nitride

NASA Technical Reports Server (NTRS)

Jefferson, D. A.; Thomas, J. M.; Wen, S.

1984-01-01

Three types of hot-pressed silicon nitride specimens (containing 5wt% Y2O3 and 2wt% Al2O3 additives) which were subjected to different temperature heat treatments were studied by X-ray diffraction, X-ray microanalysis and high resolution electron microscopy. The results indicated that there were phase changes in the grain boundaries after heat treatment and the glassy phase at the grain boundaries was crystallized by heat treatment.

Self-Association Process of a Peptide in Solution: From β-Sheet Filaments to Large Embedded Nanotubes

PubMed Central

Valéry, C.; Artzner, F.; Robert, B.; Gulick, T.; Keller, G.; Grabielle-Madelmont, C.; Torres, M.-L.; Cherif-Cheikh, R.; Paternostre, M.

2004-01-01

Lanreotide is a synthetic octapeptide used in the therapy against acromegaly. When mixed with pure water at 10% (w/w), Lanreotide (acetate salt) forms liquid crystalline and monodisperse nanotubes with a radius of 120 Å. The molecular and supramolecular organization of these structures has been determined in a previous work as relying on the lateral association of 26 β-sheet filaments made of peptide noncovalent dimers, the basic building blocks. The work presented here has been devoted to the corresponding self-association mechanisms, through the characterization of the Lanreotide structures formed in water, as a function of peptide (acetate salt) concentration (from 2% to 70% (w/w)) and temperature (from 15°C to 70°C). The corresponding states of water were also identified and quantified from the thermal behavior of water in the Lanreotide mixtures. At room temperature and below 3% (w/w) Lanreotide acetate in water, soluble aggregates were detected. From 3% to 20% (w/w) long individual and monodisperse nanotubes crystallized in a hexagonal lattice were evidenced. Their molecular and supramolecular organizations are identical to the ones characterized for the 10% (w/w) sample. Heating induces the dissolution of the nanotubes into soluble aggregates of the same structural characteristics as the room temperature ones. The solubilization temperature increases from 20°C to 70°C with the peptide concentration and reaches a plateau between 15% and 25% (w/w) in peptide. These aggregates are proposed to be the β-sheet filaments that self-associate to build the walls of the nanotubes. Above 20% (w/w) of Lanreotide acetate in water, polydisperse embedded nanotubes are formed and the hexagonal lattice is lost. These embedded nanotubes exhibit the same molecular and supramolecular organizations as the individual monodisperse nanotubes formed at lower peptide concentration. The embedded nanotubes do not melt in the range of temperature studied indicating a higher

Confinement boosts CO oxidation on an Ni atom embedded inside boron nitride nanotubes

DOE PAGES

Zhang, Yadong; Liu, Yuzhen; Meng, Zhaoshun; ...

2018-01-01

Because of the confinement effect, Ni embedded on the interior surface of BNNT exhibits a much higher catalytic activity for CO oxidation by comparing with that embedded in h-BN or on the outside surface of BNNT.

Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells

NASA Astrophysics Data System (ADS)

Wan, Yimao; Bullock, James; Cuevas, Andres

2015-05-01

This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta2O5) underneath plasma enhanced chemical vapour deposited silicon nitride (SiNx). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta2O5 and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω.cm and n-type 1.0 Ω.cm c-Si wafers, respectively. Recombination current densities of 25 fA/cm2 and 68 fA/cm2 are measured on 150 Ω/sq boron-diffused p+ and 120 Ω/sq phosphorus-diffused n+ c-Si, respectively. Capacitance-voltage measurements reveal a negative fixed insulator charge density of -1.8 × 1012 cm-2 for the Ta2O5 film and -1.0 × 1012 cm-2 for the Ta2O5/SiNx stack. The Ta2O5/SiNx stack is demonstrated to be an excellent candidate for surface passivation of high efficiency silicon solar cells.

Ab initio study of aspirin adsorption on single-walled carbon and carbon nitride nanotubes

NASA Astrophysics Data System (ADS)

Lee, Yongju; Kwon, Dae-Gyeon; Kim, Gunn; Kwon, Young-Kyun

We use ab intio density functional theory to investigate the adsorption properties of acetylsalicylic acid or aspirin on a (10, 0) carbon nanotube (CNT) and a (8, 0) triazine-based graphitic carbon nitride nanotube (CNNT). It is found that an aspirin molecule binds stronger to the CNNT with its adsorption energy of 0.67 eV than to the CNT with 0.51 eV. The stronger adsorption energy on the CNNT is ascribed to the high reactivity of its N atoms with high electron affinity. The CNNT exhibits local electric dipole moments, which cause strong charge redistribution in the aspirin molecule adsorbed on the CNNT than on the CNT. We also explore the influence of an external electric field on the adsorption properties of aspirin on these nanotubes by examining the modifications in their electronic band structures, partial densities of states, and charge distributions. It is found that an electric field applied along a particular direction induces aspirin molecular states in the in-gap region of the CNNT implying a potential application of aspirin detection.

Future Nanotube Commercialization Opportunities at the NASA Marshall Space Flight Center and the US Army Aviation and Missile Command

NASA Technical Reports Server (NTRS)

Watson, Michael; Shah, Sandeep; Kaul, Raj; Zhu, Shen; Vandiver, Terry; Zimmerman, Joe E. (Technical Monitor)

2001-01-01

Nanotube technology has broad applicability to programs at both the NASA Marshall Space Flight Center (MSFC) and the US Army Aviation and Missile Command (AMCOM). MSFC has interest in applications of nanotubes as sensors and high strength lightweight materials for propulsion system components, avionic systems, and scientific instruments. MSFC is currently pursuing internal programs to develop nanotube temperature sensors, heat pipes, and metal matrix composites. In support of these application areas MSFC is interested in growth of long nanotubes, growth of nanotubes in the microgravity environment, and nanotubes fabricated from high temperature materials such as Boron Nitride or Silicon Carbide. AMCOM is similarly interested in nanotube applications which take advantage of the nanotube thermal conductance properties, high strength, and lightweight. Applications of interest to AMCOM include rocket motor casing structures, rocket nozzles, and lightweight structure and aeronautic skins.

Long-term stability of dental adhesive incorporated by boron nitride nanotubes.

PubMed

Degrazia, Felipe Weidenbach; Leitune, Vicente Castelo Branco; Visioli, Fernanda; Samuel, Susana Maria Werner; Collares, Fabrício Mezzomo

2018-03-01

The aim of this study was to evaluate physicochemical properties, long-term microtensile bond strength and cytotoxicity of methacrylate-based adhesive containing boron nitride nanotubes (BNNTs) as fillers. A dental adhesive was formulated using BisGMA/HEMA, 66/33wt% (control). Inorganic BNNT fillers were incorporated into the adhesive at different concentrations (0.05, 0.075, 0.1 and 0.15wt%). Analyses of degree of conversion (DC), polymerization rate [Rp.(s -1 )], contact angle (CA) on dentin, after 24h and 6 months microtensile bond strength (μTBS-24h and 6 months) were assessed. Cytotoxicity was performed through viability of fibroblast cells (%) by sulforhodamine B (SRB) colorimetry. DC and max. polymerization rate increased (p<0.05) after incorporating 0.075 and 0.1wt% BNNT. The contact angle on dentin increased (p<0.05) after incorporating 0.15wt% BNNT. The μTBS-24h showed no changes (p>0.05) after incorporating up to 0.15wt% BNNT comparing to control. After 6 months, μTBS decreased (p<0.05) for control and 0.15wt% BNNT and BNNT groups up to 0.15wt% showed higher μTBS than control (p<0.05). No difference of fibroblast growth was found among adhesives (p>0.05) and up to 19% of cell viability was found comparing 0.05wt% BNNT to positive control group (100%). Incorporating boron nitride nanotubes up to 0.1wt% into dental adhesive increased the long-term stability to dentin without decreasing viability of fibroblast cell growth. Thus, the use of BNNTs as filler may decrease failure rate of current dentinal adhesives. Copyright © 2017 The Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

Polyaniline-encapsulated silicon on three-dimensional carbon nanotubes foam with enhanced electrochemical performance for lithium-ion batteries

NASA Astrophysics Data System (ADS)

Zhou, Xiaoming; Liu, Yang; Du, Chunyu; Ren, Yang; Mu, Tiansheng; Zuo, Pengjian; Yin, Geping; Ma, Yulin; Cheng, Xinqun; Gao, Yunzhi

2018-03-01

Seeking free volume around nanostructures for silicon-based anodes has been a crucial strategy to improve cycling and rate performance in the next generation Li-ion batteries. Herein, through a simple pyrolysis and in-situ polymerization approach, the low cost commercially available melamine foam as a soft template converts carbon nanotubes into highly dispersed and three-dimensionally interconnected framework with encapsulated silicon/polyaniline hierarchical nanoarchitecture. This unique core-sheath structure based on carbon nanotubes foam integrates a large number of mesoporous, thus providing well-accessible space for electrolyte wetting, whereas the carbon nanotubes matrix serves as conductive thoroughfares for electron transport. Meanwhile, the outer polyaniline coated on silicon nanoparticles provides effective space for volume expansion of silicon, further inhibiting the active material escape from the current collector. As expected, the PANI-Si@CNTs foam exhibits a high initial specific capacity of 1954 mAh g-1 and retains 727 mAh g-1 after 100 cycles at 100 mA g-1, which can be attributed to highly electrical conductivity of carbon nanotubes and protective layer of polyaniline sheath, together with three-dimensionally interconnected porous skeleton. This facile structure can pave a way for large scale synthesis of high durable silicon-based anodes or other electrode materials with huge volume expansion.

The structure, stability, and electronic properties of ultra-thin BC2N nanotubes: a first-principles study.

PubMed

Wang, Yue; Zhang, Juan; Huang, Gang; Yao, Xinhua; Shao, Qingyi

2014-12-01

Rapid developments of the silicon electronics industry have close to the physical limits and nanotube materials are the ideal materials to replace silicon for the preparation of next generation electronic devices. Boron-carbon-nitrogen nanotubes (BCNNT) can be formed by joining carbon nanotube (CNT) and boron nitride nanotube (BNNT) segments, and BC2N nanotubes have been widely and deeply studied. Here, we employed first-principles calculations based on density function theory (DFT) to study the structure, stability, and electronic properties of ultra thin (4 Å diameter) BC2N nanotubes. Our results showed that the cross sections of BC2N nanotubes can transform from round to oval when CNT and BNNT segments are parallel to the tube axis. It results when the curvature of BNNT segments become larger than CNT segments. Further, we found the stability of BC2N nanotubes is sensitive to the number of B-N bonds, and the phase segregation of BNNT and CNT segments is energetically favored. We also obtained that all (3,3) BC2N nanotubes are semiconductor, whereas (5,0) BC2N nanotubes are conductor when CNT and BNNT segments are perpendicular to the tube axis; and semiconductor when CNT and BNNT segments are parallel to the tube axis. These electronic properties are abnormal when compared to the relative big ones.

Mechanistic analysis of time-dependent failure of oxynitride glass-joined silicon nitride below 1000 degree C

DOE Office of Scientific and Technical Information (OSTI.GOV)

O'Brien, M.H.; Coon, D.M.

Time-dependent failure at elevated temperatures currently governs the service life of oxynitride glass-joined silicon nitride. Creep, devitrification, stress- aided oxidation-controlled slow crack growth, and viscous cabitation-controlled failure are examined as possible controlling mechanisms. Creep deformation failure is observed above 1000{degrees}C. Fractographic evidence indicates cavity formation and growth below 1000{degrees}C. Auger electron spectroscopy verified that the oxidation rate of the joining glass is governed by the oxygen supply rate. Time-to-failure data and those predicted using the Tsai and Raj, and Raj and Dang viscous cavitation models. It is concluded that viscous relaxation and isolated cavity growth control the rate of failuremore » in oxynitride glass-filled silicon nitride joints below 1000{degrees}C. Several possible methods are also proposed for increasing the service lives of these joints.« less

Microwave Integrated Circuit Amplifier Designs Submitted to Qorvo for Fabrication with 0.09-micron High Electron Mobility Transistors (HEMTs) using 2-mil Gallium Nitride (GaN) on Silicon Carbide (SiC)

DTIC Science & Technology

2016-03-01

Fabrication with 0.09-µm High-Electron-Mobility Transistors (HEMTs) Using 2-mil Gallium Nitride (GaN) on Silicon Carbide (SiC) by John E Penn...for Fabrication with 0.09-µm High-Electron-Mobility Transistors (HEMTs) using 2-mil Gallium Nitride (GaN) on Silicon Carbide by John E Penn...µm High-Electron-Mobility Transistors (HEMTs) using 2-mil Gallium Nitride (GaN) on Silicon Carbide 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c

Near-Field Infrared Pump-Probe Imaging of Surface Phonon Coupling in Boron Nitride Nanotubes.

PubMed

Gilburd, Leonid; Xu, Xiaoji G; Bando, Yoshio; Golberg, Dmitri; Walker, Gilbert C

2016-01-21

Surface phonon modes are lattice vibrational modes of a solid surface. Two common surface modes, called longitudinal and transverse optical modes, exhibit lattice vibration along or perpendicular to the direction of the wave. We report a two-color, infrared pump-infrared probe technique based on scattering type near-field optical microscopy (s-SNOM) to spatially resolve coupling between surface phonon modes. Spatially varying couplings between the longitudinal optical and surface phonon polariton modes of boron nitride nanotubes are observed, and a simple model is proposed.

Substitution of ceramics for high temperature alloys. [advantages of using silicon carbides and silicon nitrides in gas turbine engines

NASA Technical Reports Server (NTRS)

Probst, H. B.

1978-01-01

The high temperature capability of ceramics such as silicon nitride and silicon carbide can result in turbine engines of improved efficiency. Other advantages when compared to the nickel and cobalt alloys in current use are raw material availability, lower weight, erosion/corrosion resistance, and potentially lower cost. The use of ceramics in three different sizes of gas turbine is considered; these are the large utility turbines, advanced aircraft turbines, and small automotive turbines. Special consideration, unique to each of these applications, arise when one considers substituting ceramics for high temperature alloys. The effects of material substitutions are reviewed in terms of engine performance, operating economy, and secondary effects.

Improved silicon nitride for advanced heat engines

NASA Technical Reports Server (NTRS)

Yeh, Harry C.; Fang, Ho T.

1991-01-01

The results of a four year program to improve the strength and reliability of injection-molded silicon nitride are summarized. Statistically designed processing experiments were performed to identify and optimize critical processing parameters and compositions. Process improvements were monitored by strength testing at room and elevated temperatures, and microstructural characterization by optical, scanning electron microscopes, and scanning transmission electron microscope. Processing modifications resulted in a 20 percent strength and 72 percent Weibull slope improvement of the baseline material. Additional sintering aids screening and optimization experiments succeeded in developing a new composition (GN-10) capable of 581.2 MPa at 1399 C. A SiC whisker toughened composite using this material as a matrix achieved a room temperature toughness of 6.9 MPa m(exp .5) by the Chevron notched bar technique. Exploratory experiments were conducted on injection molding of turbocharger rotors.

Multifunctional fiber reinforced polymer composites using carbon and boron nitride nanotubes

NASA Astrophysics Data System (ADS)

Ashrafi, Behnam; Jakubinek, Michael B.; Martinez-Rubi, Yadienka; Rahmat, Meysam; Djokic, Drazen; Laqua, Kurtis; Park, Daesun; Kim, Keun-Su; Simard, Benoit; Yousefpour, Ali

2017-12-01

Recent progress in nanotechnology has made several nano-based materials available with the potential to address limitations of conventional fiber reinforced polymer composites, particularly in reference to multifunctional structures. Carbon nanotubes (CNTs) are the most prevalent case and offer amazing properties at the individual nanotube level. There are already a few high-profile examples of the use of CNTs in space structures to provide added electrical conductivity for static dissipation and electromagnetic shielding. Boron nitride nanotubes (BNNTs), which are structurally analogous to CNTs, also present a range of attractive properties. Like the more widely explored CNTs, individual BNNTs display remarkable mechanical properties and high thermal conductivity but with contrasting functional attributes including substantially higher thermal stability, high electrical insulation, polarizability, high neutron absorption and transparency to visible light. This presents the potential of employing either or both BNNTs and CNTs to achieve a range of lightweight, functional composites for space structures. Here we present the case for application of BNNTs, in addition to CNTs, in space structures and describe recent advances in BNNT production at the National Research Council Canada (NRC) that have, for the first time, provided sufficiently large quantities to enable commercialization of high-quality BNNTs and accelerate development of chemistry, composites and applications based on BNNTs. Early demonstrations showing the fabrication and limited structural testing of polymer matrix composites, including glass fiber-reinforced composite panels containing BNNTs will be discussed.

Strength evaluation test of pressureless-sintered silicon nitride at room temperature

NASA Technical Reports Server (NTRS)

Matsusue, K.; Takahara, K.; Hashimoto, R.

1984-01-01

In order to study strength characteristics at room temperature and the strength evaluating method of ceramic materials, the following tests were conducted on pressureless sintered silicon nitride specimens: bending tests, the three tensile tests of rectangular plates, holed plates, and notched plates, and spin tests of centrally holed disks. The relationship between the mean strength of specimens and the effective volume of specimens are examined using Weibull's theory. The effect of surface grinding on the strength of specimens is discussed.

Boron nitride nanotubes as novel fillers for improving the properties of dental adhesives.

PubMed

Degrazia, Felipe Weidenbach; Leitune, Vicente Castelo Branco; Samuel, Susana Maria Werner; Collares, Fabrício Mezzomo

2017-07-01

This study aimed to evaluate the physical-chemical properties of experimental dental adhesives containing boron nitride nanotubes (BNNTs) as inorganic fillers. An experimental adhesive resin was prepared using HEMA-BisGMA, 66/33wt% (control). Inorganic BNNT fillers were first analyzed using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) and then incorporated into the adhesive at different concentration (0.05, 0.075, 0.1, 0.15wt%). Degree of conversion (DC), ultimate strength, contact angle, surface free energy (SFE) microhardness, softening in solvent and bioactivity were assessed. Scanning and transmission electron microscopy (SEM and TEM) showed BNNTs with diameter ranging from 5 to 10nm with close end tips. No changes in DC were observed after incorporating BNNTs up to 0.15wt%. The contact angles of water and α-bromonaphthalene increased (p<0.05) and consequently the SFE decreased after incorporating BNNTs to the polymer matrix. Microhardness and solvent degradation strength increased after incorporation of 0.075, 0.1 and 0.15wt% BNNTs. Mineral deposition was found after 7days of immersion on adhesive specimens after incorporation of BNNT. The incorporation of BNNTs up to 0.15wt% improved the chemical and mechanical properties of dental adhesives and promoted mineral deposition. Incorporation of boron nitride nanotubes into adhesive resin materials improved physical-chemical properties and increased mineral deposition on its surface allowing enhanced properties of the resin-dentin interface. Thus, the novel adhesive material is promising as a dental adhesive and may contribute to the stability of the dentin-resin bonding. Copyright © 2017 Elsevier Ltd. All rights reserved.

The effect of dry shear aligning of nanotube thin films on the photovoltaic performance of carbon nanotube–silicon solar cells

PubMed Central

Stolz, Benedikt W; Tune, Daniel D

2016-01-01

Summary Recent results in the field of carbon nanotube–silicon solar cells have suggested that the best performance is obtained when the nanotube film provides good coverage of the silicon surface and when the nanotubes in the film are aligned parallel to the surface. The recently developed process of dry shear aligning – in which shear force is applied to the surface of carbon nanotube thin films in the dry state, has been shown to yield nanotube films that are very flat and in which the surface nanotubes are very well aligned in the direction of shear. It is thus reasonable to expect that nanotube films subjected to dry shear aligning should outperform otherwise identical films formed by other processes. In this work, the fabrication and characterisation of carbon nanotube–silicon solar cells using such films is reported, and the photovoltaic performance of devices produced with and without dry shear aligning is compared. PMID:27826524

Deposition of silicon nitride from SiCl4 and NH3 in a low pressure RF plasma

NASA Technical Reports Server (NTRS)

Ron, Y.; Raveh, A.; Carmi, U.; Inspektor, A.; Avni, R.

1983-01-01

Silicon nitride coatings were deposited in a low-pressure (1-10 Torr) RF plasma from SiCl4 and NH3 in the presence of argon onto stainless martensitic steel grounded and floating substrates at 300 C and 440 C respectively. The heating of the substrates depends mainly on the position and the induced RF power. The coatings were identified as silicon nitride by X-ray investigation and were found to contain chlorine by energy-dispersive analysis of X-rays. The growth rate, the microhardness and the chlorine concentration of the coatings were determined as a function of the total gas pressure, the RF power input and the NH3-to-SiCl4 ratio. It was observed that the coatings on the floating substrates have higher deposition rates and are of superior quality.

Silicon rich nitride ring resonators for rare - earth doped telecommunications-band amplifiers pumped at the O-band.

PubMed

Xing, P; Chen, G F R; Zhao, X; Ng, D K T; Tan, M C; Tan, D T H

2017-08-22

Ring resonators on silicon rich nitride for potential use as rare-earth doped amplifiers pumped at 1310 nm with amplification at telecommunications-band are designed and characterized. The ring resonators are fabricated on 300 nm and 400 nm silicon rich nitride films and characterized at both 1310 nm and 1550 nm. We demonstrate ring resonators exhibiting similar quality factors exceeding 10,000 simultaneously at 1310 nm and 1550 nm. A Dysprosium-Erbium material system exhibiting photoluminescence at 1510 nm when pumped at 1310 nm is experimentally demonstrated. When used together with Dy-Er co-doped particles, these resonators with similar quality factors at 1310 nm and 1550 nm may be used for O-band pumped amplifiers for the telecommunications-band.

Comparative study of elastic constantd of α-, β- and Cubic- silicon nitride

NASA Astrophysics Data System (ADS)

Yao, Hongzhi; Ouyang, Lizhi; Ching, Wai-Yim

2003-03-01

Silicon nitride is an important structural ceramic and dielectric insulator. Recently, the new high pressure cubic phase of silicon nitride in spinel structure has attracted a lot of attention.^[1] We have carried out a detailed ab-initio calculation of all independent elastic constants for all three phases of Si_3N4 by using the Vienna Ab-initio Simulation Package (VASP) in both LDA and GGA approxmations. The results for β-Si_3N4 are in reasonable agreement with a experimental measurement on single crystal samples.^[2] For cubic-Si_3N4 , The three independent elastic constants are predicted to be C_11 = 504.16 GPa, C_12 = 176.66 GPa, C_44 = 326.65 GPa and a bulk modulus B = 286 GPa. This value is very close to the experimental value of 300 GPa.^[1] All these results will be compared with those obtained by using the OLCAO method based on localized orbital approach.^[3] [1]. Wai-Yim Ching, Yong-Nian Xu, Jukian D. Gale, and Manfred Ruhle, J. Am. Ceram. Soc. 81, 3189 (1998) [2]. R. Vogelgesang, M. Grimsditch, and J. S. Wallace, Appl. Phys. Lett. 76, 8 (2000) [3]. W.Y.Ching, Lizhi Ouyang, and Julian D. Gale, Phys. Rev. B61, 13, (2000)

Utilization of multiwalled boron nitride nanotubes for the reinforcement of lightweight aluminum ribbons

PubMed Central

2013-01-01

Multiwalled boron nitride nanotubes (BNNTs) have very attractive mechanical and thermal properties, e.g., elasticity, tensile strength, and high resistance to oxidation, and may be considered as ideal reinforcing agents in lightweight metal matrix composites. Herein, for the first time, Al-BNNT ribbons with various BNNT contents (up to 3 wt.%) were fabricated via melt spinning in an argon atmosphere. BNNTs were randomly dispersed within a microcrystalline Al matrix under ribbon casting and led to more than doubling of room-temperature ultimate tensile strength of the composites compared to pure Al ribbons produced at the similar conditions. PMID:23279813

Vertical waveguides integrated with silicon photodetectors: Towards high efficiency and low cross-talk image sensors

NASA Astrophysics Data System (ADS)

Tut, Turgut; Dan, Yaping; Duane, Peter; Yu, Young; Wober, Munib; Crozier, Kenneth B.

2012-01-01

We describe the experimental realization of vertical silicon nitride waveguides integrated with silicon photodetectors. The waveguides are embedded in a silicon dioxide layer. Scanning photocurrent microscopy is performed on a device containing a waveguide, and on a device containing the silicon dioxide layer, but without the waveguide. The results confirm the waveguide's ability to guide light onto the photodetector with high efficiency. We anticipate that the use of these structures in image sensors, with one waveguide per pixel, would greatly improve efficiency and significantly reduce inter-pixel crosstalk.

Accurate atomistic potentials and training sets for boron-nitride nanostructures

NASA Astrophysics Data System (ADS)

Tamblyn, Isaac

Boron nitride nanotubes exhibit exceptional structural, mechanical, and thermal properties. They are optically transparent and have high thermal stability, suggesting a wide range of opportunities for structural reinforcement of materials. Modeling can play an important role in determining the optimal approach to integrating nanotubes into a supporting matrix. Developing accurate, atomistic scale models of such nanoscale interfaces embedded within composites is challenging, however, due to the mismatch of length scales involved. Typical nanotube diameters range from 5-50 nm, with a length as large as a micron (i.e. a relevant length-scale for structural reinforcement). Unlike their carbon-based counterparts, well tested and transferable interatomic force fields are not common for BNNT. In light of this, we have developed an extensive training database of BN rich materials, under conditions relevant for BNNT synthesis and composites based on extensive first principles molecular dynamics simulations. Using this data, we have produced an artificial neural network potential capable of reproducing the accuracy of first principles data at significantly reduced computational cost, allowing for accurate simulation at the much larger length scales needed for composite design.

Room temperature visible photoluminescence of silicon nanocrystallites embedded in amorphous silicon carbide matrix

NASA Astrophysics Data System (ADS)

Coscia, U.; Ambrosone, G.; Basa, D. K.

2008-03-01

The nanocrystalline silicon embedded in amorphous silicon carbide matrix was prepared by varying rf power in high vacuum plasma enhanced chemical vapor deposition system using silane methane gas mixture highly diluted in hydrogen. In this paper, we have studied the evolution of the structural, optical, and electrical properties of this material as a function of rf power. We have observed visible photoluminescence at room temperature and also have discussed the role played by the Si nanocrystallites and the amorphous silicon carbide matrix. The decrease of the nanocrystalline size, responsible for quantum confinement effect, facilitated by the amorphous silicon carbide matrix, is shown to be the primary cause for the increase in the PL intensity, blueshift of the PL peak position, decrease of the PL width (full width at half maximum) as well as the increase of the optical band gap and the decrease of the dark conductivity.

The electroluminescence mechanism of Er³⁺ in different silicon oxide and silicon nitride environments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rebohle, L., E-mail: l.rebohle@hzdr.de; Wutzler, R.; Braun, M.

Rare earth doped metal-oxide-semiconductor (MOS) structures are of great interest for Si-based light emission. However, several physical limitations make it difficult to achieve the performance of light emitters based on compound semiconductors. To address this point, in this work the electroluminescence (EL) excitation and quenching mechanism of Er-implanted MOS structures with different designs of the dielectric stack are investigated. The devices usually consist of an injection layer made of SiO₂ and an Er-implanted layer made of SiO₂, Si-rich SiO₂, silicon nitride, or Si-rich silicon nitride. All structures implanted with Er show intense EL around 1540 nm with EL power efficienciesmore » in the order of 2 × 10⁻³ (for SiO₂:Er) or 2 × 10⁻⁴(all other matrices) for lower current densities. The EL is excited by the impact of hot electrons with an excitation cross section in the range of 0.5–1.5 × 10⁻¹⁵cm⁻². Whereas the fraction of potentially excitable Er ions in SiO₂ can reach values up to 50%, five times lower values were observed for other matrices. The decrease of the EL decay time for devices with Si-rich SiO₂ or Si nitride compared to SiO₂ as host matrix implies an increase of the number of defects adding additional non-radiative de-excitation paths for Er³⁺. For all investigated devices, EL quenching cross sections in the 10⁻²⁰ cm² range and charge-to-breakdown values in the range of 1–10 C cm⁻² were measured. For the present design with a SiO₂ acceleration layer, thickness reduction and the use of different host matrices did not improve the EL power efficiency or the operation lifetime, but strongly lowered the operation voltage needed to achieve intense EL.« less

Modeling of Laser Vaporization and Plume Chemistry in a Boron Nitride Nanotube Production Rig

NASA Technical Reports Server (NTRS)

Gnoffo, Peter A.; Fay, Catharine C.

2012-01-01

Flow in a pressurized, vapor condensation (PVC) boron nitride nanotube (BNNT) production rig is modeled. A laser provides a thermal energy source to the tip of a boron ber bundle in a high pressure nitrogen chamber causing a plume of boron-rich gas to rise. The buoyancy driven flow is modeled as a mixture of thermally perfect gases (B, B2, N, N2, BN) in either thermochemical equilibrium or chemical nonequilibrium assuming steady-state melt and vaporization from a 1 mm radius spot at the axis of an axisymmetric chamber. The simulation is intended to define the macroscopic thermochemical environment from which boron-rich species, including nanotubes, condense out of the plume. Simulations indicate a high temperature environment (T > 4400K) for elevated pressures within 1 mm of the surface sufficient to dissociate molecular nitrogen and form BN at the base of the plume. Modifications to Program LAURA, a finite-volume based solver for hypersonic flows including coupled radiation and ablation, are described to enable this simulation. Simulations indicate that high pressure synthesis conditions enable formation of BN vapor in the plume that may serve to enhance formation of exceptionally long nanotubes in the PVC process.

Preparation of a silicon surface for subsequent growth of dilute nitride alloys by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Lazarenko, A. A.; Berezovskaya, T. N.; Denisov, D. V.; Sobolev, M. S.; Pirogov, E. V.; Nikitina, E. V.

2017-11-01

This article discusses the process of preparation of a silicon surface for subsequent growth of dilute nitride alloys by molecular-beam epitaxy. The method of preparation of Si (100) and Si (111) substrates was developed. This method provides reproducible high-quality silicon surface for molecular-beam epitaxy of Si-GaP heterostructures. As a result, it managed to reduce the eviction oxide temperature below 800 °C, which is an important parameter for the MBE technology.

The role of boron nitride nanotube as a new chemical sensor and potential reservoir for hydrogen halides environmental pollutants

NASA Astrophysics Data System (ADS)

Yoosefian, Mehdi; Etminan, Nazanin; Moghani, Maryam Zeraati; Mirzaei, Samaneh; Abbasi, Shima

2016-10-01

Density functional theory (DFT) studies on the interaction of hydrogen halides (HX) environmental pollutants and the boron nitride nanotubes (BNNTs) have been reported. To exploit the possibility of BNNTs as gas sensors, the adsorption of hydrogen fluoride (HF), hydrogen chloride (HCl) and hydrogen bromide (HBr) on the side wall of armchair (5,5) boron nitride nanotubes have been investigated. B3LYP/6-31G (d) level were used to analyze the structural and electronic properties of investigate sensor. The adsorption process were interpreted by highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO), quantum theory of atoms in molecules (QTAIM), natural bond orbital (NBO) and molecular electrostatic potential (MEP) analysis. Topological parameters of bond critical points have been used to calculate as measure of hydrogen bond (HB) strength. Stronger binding energy, larger charge transfer and charge density illustrate that HF gas possesses chemisorbed adsorption process. The obtained results also show the strongest HB in HF/BNNT complex. We expect that results could provide helpful information for the design of new BNNTs based sensing devices.

Catalytic CVD synthesis of boron nitride and carbon nanomaterials - synergies between experiment and theory.

PubMed

McLean, Ben; Eveleens, Clothilde A; Mitchell, Izaac; Webber, Grant B; Page, Alister J

2017-10-11

Low-dimensional carbon and boron nitride nanomaterials - hexagonal boron nitride, graphene, boron nitride nanotubes and carbon nanotubes - remain at the forefront of advanced materials research. Catalytic chemical vapour deposition has become an invaluable technique for reliably and cost-effectively synthesising these materials. In this review, we will emphasise how a synergy between experimental and theoretical methods has enhanced the understanding and optimisation of this synthetic technique. This review examines recent advances in the application of CVD to synthesising boron nitride and carbon nanomaterials and highlights where, in many cases, molecular simulations and quantum chemistry have provided key insights complementary to experimental investigation. This synergy is particularly prominent in the field of carbon nanotube and graphene CVD synthesis, and we propose here it will be the key to future advances in optimisation of CVD synthesis of boron nitride nanomaterials, boron nitride - carbon composite materials, and other nanomaterials generally.

Foreign Object Damage in Disks of Two Gas-turbine-grade Silicon Nitrides by Steel Ball Projectiles at Ambient Temperature

NASA Technical Reports Server (NTRS)

Choi, Sung R.; Pereira, J. Michael; Janosik, Lesley A.; Bhatt, Ramakrishna T.

2003-01-01

Foreign object damage (FOD) behavior of two commercial gas-turbine-grade silicon nitrides, AS800 and SN282, was determined at ambient temperature through postimpact strength testing of disks impacted by steel ball projectiles with a diameter of 1.59 mm in a velocity range from 115 to 440 m/s. AS800 silicon nitride exhibited a greater FOD resistance than SN282, primarily due to its greater value of fracture toughness (k(sub Ic)). The critical impact velocity V(sub c) for which the corresponding postimpact strength was the lowest was V(sub c) approximately equal to 440 and 300 m/s AS800 and SN282, respectively. A unique lower strength regime was typified for both silicon nitrides depending on impact velocity and was attributed to significant radial cracking. The damage generated by projectile impact was typically in the form of ring, radial, and cone cracks with their severity and combination being dependent on impact velocity. Unlike the thick (4 millimeters) flexure bar specimens used in our previous studies, the thin (2 millimeter) disk target specimen exhibited a unique back-side radial cracking on the reverse side just beneath the impact sites at and above impact velocities of 160 meters per second for SN282 and 220 meters per second AS800.

Electrothermal actuation based on carbon nanotube network in silicone elastomer

NASA Astrophysics Data System (ADS)

Chen, L. Z.; Liu, C. H.; Hu, C. H.; Fan, S. S.

2008-06-01

The authors report an electrothermal actuator, which is fabricated by involving carbon nanotube network into the silicone elastomer. The actuators exhibit excellent performances as good as normal dielectric elastomer actuators while working under much lower voltages (e.g., 1.5Vmm-1). They are longitudinal actuators and there is no need for stacking or rolling sheets of materials. In addition, they can satisfy the demand of different voltage applications ranging from dozens of voltages to thousands of voltages by using different carbon nanotube loading composites. Visible maximal strain of 4.4% occurs at an electric power intensity around 0.03Wmm-3.

Boron nitride nanotube-enhanced osteogenic differentiation of mesenchymal stem cells.

PubMed

Li, Xia; Wang, Xiupeng; Jiang, Xiangfen; Yamaguchi, Maho; Ito, Atsuo; Bando, Yoshio; Golberg, Dmitri

2016-02-01

The interaction between boron nitride nanotubes (BNNTs) layer and mesenchymal stem cells (MSCs) is evaluated for the first time in this study. BNNTs layer supports the attachment and growth of MSCs and exhibits good biocompatibility with MSCs. BNNTs show high protein adsorption ability, promote the proliferation of MSCs and increase the secretion of total protein by MSCs. Especially, BNNTs enhance the alkaline phosphatase (ALP) activity as an early marker of osteoblasts, ALP/total protein and osteocalcin (OCN) as a late marker of osteogenic differentiation, which shows that BNNTs can enhance osteogenesis of MSCs. The release of trace boron and the stress on cells exerted by BNNTs with a fiber structure may account for the enhanced differentiation of MSCs into osteoblasts. Therefore BNNTs are potentially useful for bone regeneration in orthopedic applications. © 2015 Wiley Periodicals, Inc.

Realization of an ultra-compact polarization beam splitter using asymmetric MMI based on silicon nitride / silicon-on-insulator platform.

PubMed

Sun, Xiao; Aitchison, J Stewart; Mojahedi, Mo

2017-04-03

We have experimentally demonstrated a compact polarization beam splitter (PBS) based on the silicon nitride/silicon-on-insulator platform using the recently proposed augmented-low-index-guiding (ALIG) waveguide structure. The two orthogonal polarizations are split in an asymmetric multimode interference (MMI) section, which was 1.6 μm wide and 4.8 μm long. The device works well over the entire C-band wavelength range and has a measured low insertion loss of less than 1 dB. The polarization extinction ratio at the Bar Port is approximately 17 dB and at the Cross Port is approximately 25 dB. The design of the device is robust and has a good fabrication tolerance.

Improved silicon nitride for advanced heat engines

NASA Technical Reports Server (NTRS)

Yeh, H. C.; Wimmer, J. M.

1986-01-01

Silicon nitride is a high temperature material currently under consideration for heat engine and other applications. The objective is to improve the net shape fabrication technology of Si3N4 by injection molding. This is to be accomplished by optimizing the process through a series of statistically designed matrix experiments. To provide input to the matrix experiments, a wide range of alternate materials and processing parameters was investigated throughout the whole program. The improvement in the processing is to be demonstrated by a 20 percent increase in strength and a 100 percent increase in the Weibull modulus over that of the baseline material. A full characterization of the baseline process was completed. Material properties were found to be highly dependent on each step of the process. Several important parameters identified thus far are the starting raw materials, sinter/hot isostatic pressing cycle, powder bed, mixing methods, and sintering aid levels.

Boron nitride nanotubes enhance properties of chitosan-based scaffolds.

PubMed

Emanet, Melis; Kazanç, Emine; Çobandede, Zehra; Çulha, Mustafa

2016-10-20

With their low toxicity, high mechanical strength and chemical stability, boron nitride nanotubes (BNNTs) are good candidates to enhance the properties of polymers, composites and scaffolds. Chitosan-based scaffolds are exhaustively investigated in tissue engineering because of their biocompatibility and antimicrobial activity. However, their spontaneous degradation prevents their use in a range of tissue engineering applications. In this study, hydroxylated BNNTs (BNNT-OH) were included into a chitosan scaffold and tested for their mechanical strength, swelling behavior and biodegradability. The results show that inclusion of BNNTs-OH into the chitosan scaffold increases the mechanical strength and pore size at values optimal for high cellular proliferation and adhesion. The chitosan/BNNT-OH scaffold was also found to be non-toxic to Human Dermal Fibroblast (HDF) cells due to its slow degradation rate. HDF cell proliferation and adhesion were increased as compared to the chitosan-only scaffold as observed by scanning electron microscopy (SEM) and fluorescent microscopy images. Copyright © 2016 Elsevier Ltd. All rights reserved.

Evaluation of Silicon Nitride for Brayton Turbine Wheel Application

NASA Technical Reports Server (NTRS)

Freedman, Marc R.

2008-01-01

Silicon nitride (Si3N4) is being evaluated as a risk-reduction alternative for a Jupiter Icy Moons Orbiter Brayton turbine wheel in the event that the Prometheus program design requirements exceed the creep strength of the baseline metallic superalloys. Five Si3N4 ceramics, each processed by a different method, were screened based on the Weibull distribution of bend strength at 1700 F (927 C). Three of the Si3N4 ceramics, Honeywell AS800, Kyocera SN282, and Saint-Gobain NT154, had bend strengths in excess of 87 ksi (600 MPa) at 1700 F (927 C). These were chosen for further assessment and consideration for future subcomponent and component fabrication and testing.

Improved performance of silicon nitride-based high temperature ceramics

NASA Technical Reports Server (NTRS)

Ashbrook, R. L.

1977-01-01

Recent progress in the production of Si3N4 based ceramics is reviewed: (1) high temperature strength and toughness of hot pressed Si3N4 were improved by using high purity powder and a stabilized ZrO2 additive, (2) impact resistance of hot pressed Si3N4 was increased by the use of a crushable energy absorbing layer, (3) the oxidation resistance and strength of reaction sintered Si3N4 were increased by impregnating reaction sintered silicon nitride with solutions that oxidize to Al2O3 or ZrO2, (4) beta prime SiA1ON compositions and sintering aids were developed for improved oxidation resistance or improved high temperature strength.

Design and fabrication of absorber coupled TES microbolometers on continuous silicon-nitride windows.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, C. L.; Carlstrom, J. E.; Datesman, A.

2008-04-01

The implementation of TES based microbolometer arrays will achieve unprecedented sensitivities for mm and sub-mm astronomy through fabrication of large format arrays and improved linearity and stability arising from strong electro-thermal feedback. We report on progress in developing TES microbolometers using Mo/Au thin films and Au absorbing structures. We present measurements of suppressing the thermal conductance through the etching of features on a continuous Silicon-Nitride window.

Silicon nitride: A ceramic material with outstanding resistance to thermal shock and corrosion

NASA Technical Reports Server (NTRS)

Huebner, K. H.; Saure, F.

1983-01-01

The known physical, mechanical and chemical properties of reaction-sintered silicon nitride are summarized. This material deserves interest especially because of its unusually good resistance to thermal shock and corrosion at high temperatures. Two types are distinguished: reaction-sintered (porous) and hot-pressed (dense) Si3N4. Only the reaction-sintered material which is being produced today in large scale as crucibles, pipes, nozzles and tiles is considered.

Study of phenomena related to the sintering process of silicon nitride at atmospheric pressure

NASA Technical Reports Server (NTRS)

Bertani, A.

1982-01-01

A procedure was perfected for the production of components used in engineering applications of silicon nitride. Particles of complex geometry that combine remarkable mechanical properties with a high density are obtained. The process developed, in contrast to the "hot pressing" method, does not use external pressures, and in contrast to the reaction bonding method, final densities close to the theoretical value are obtained.

Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities.

PubMed

Ishii, Akihiro; He, Xiaowei; Hartmann, Nicolai F; Machiya, Hidenori; Htoon, Han; Doorn, Stephen K; Kato, Yuichiro K

2018-06-13

Single-walled carbon nanotubes are a promising material as quantum light sources at room temperature and as nanoscale light sources for integrated photonic circuits on silicon. Here, we show that the integration of dopant states in carbon nanotubes and silicon microcavities can provide bright and high-purity single-photon emitters on a silicon photonics platform at room temperature. We perform photoluminescence spectroscopy and observe the enhancement of emission from the dopant states by a factor of ∼50, and cavity-enhanced radiative decay is confirmed using time-resolved measurements, in which a ∼30% decrease of emission lifetime is observed. The statistics of photons emitted from the cavity-coupled dopant states are investigated by photon-correlation measurements, and high-purity single photon generation is observed. The excitation power dependence of photon emission statistics shows that the degree of photon antibunching can be kept high even when the excitation power increases, while the single-photon emission rate can be increased to ∼1.7 × 10 7 Hz.

High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reddy, Pramod; Washiyama, Shun; Kaess, Felix

2016-04-14

In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride deposited on Al{sub x}Ga{sub 1-x}N (of varying Al composition “x”) via low pressure chemical vapor deposition. Silicon nitride is found to form a type II staggered band alignment with AlGaN for all Al compositions (0 ≤ x ≤ 1) and present an electron barrier into AlGaN even at higher Al compositions, where E{sub g}(AlGaN) > E{sub g}(Si{sub 3}N{sub 4}). Further, no band bending is observed in AlGaN for x ≤ 0.6 and a reduced band bending (by ∼1 eV in comparison to that atmore » free surface) is observed for x > 0.6. The Fermi level in silicon nitride is found to be at 3 eV with respect to its valence band, which is likely due to silicon (≡Si{sup 0/−1}) dangling bonds. The presence of band bending for x > 0.6 is seen as a likely consequence of Fermi level alignment at Si{sub 3}N{sub 4}/AlGaN hetero-interface and not due to interface states. Photoelectron spectroscopy results are corroborated by current-voltage-temperature and capacitance-voltage measurements. A shift in the interface Fermi level (before band bending at equilibrium) from the conduction band in Si{sub 3}N{sub 4}/n-GaN to the valence band in Si{sub 3}N{sub 4}/p-GaN is observed, which strongly indicates a reduction in mid-gap interface states. Hence, stoichiometric silicon nitride is found to be a feasible passivation and dielectric insulation material for AlGaN at any composition.« less

Growing Aligned Carbon Nanotubes for Interconnections in ICs

NASA Technical Reports Server (NTRS)

Li, Jun; Ye, Qi; Cassell, Alan; Ng, Hou Tee; Stevens, Ramsey; Han, Jie; Meyyappan, M.

2005-01-01

A process for growing multiwalled carbon nanotubes anchored at specified locations and aligned along specified directions has been invented. Typically, one would grow a number of the nanotubes oriented perpendicularly to a silicon integrated-circuit (IC) substrate, starting from (and anchored on) patterned catalytic spots on the substrate. Such arrays of perpendicular carbon nanotubes could be used as electrical interconnections between levels of multilevel ICs. The process (see Figure 1) begins with the formation of a layer, a few hundred nanometers thick, of a compatible electrically insulating material (e.g., SiO(x) or Si(y)N(z) on the silicon substrate. A patterned film of a suitable electrical conductor (Al, Mo, Cr, Ti, Ta, Pt, Ir, or doped Si), having a thickness between 1 nm and 2 m, is deposited on the insulating layer to form the IC conductor pattern. Next, a catalytic material (usually, Ni, Fe, or Co) is deposited to a thickness between 1 and 30 nm on the spots from which it is desired to grow carbon nanotubes. The carbon nanotubes are grown by plasma-enhanced chemical vapor deposition (PECVD). Unlike the matted and tangled carbon nanotubes grown by thermal CVD, the carbon nanotubes grown by PECVD are perpendicular and freestanding because an electric field perpendicular to the substrate is used in PECVD. Next, the free space between the carbon nanotubes is filled with SiO2 by means of CVD from tetraethylorthosilicate (TEOS), thereby forming an array of carbon nanotubes embedded in SiO2. Chemical mechanical polishing (CMP) is then performed to remove excess SiO2 and form a flat-top surface in which the outer ends of the carbon nanotubes are exposed. Optionally, depending on the application, metal lines to connect selected ends of carbon nanotubes may be deposited on the top surface. The top part of Figure 2 is a scanning electron micrograph (SEM) of carbon nanotubes grown, as described above, on catalytic spots of about 100 nm diameter patterned by

Passivation of c-Si surfaces by sub-nm amorphous silicon capped with silicon nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Yimao, E-mail: yimao.wan@anu.edu.au; Yan, Di; Bullock, James

2015-12-07

A sub-nm hydrogenated amorphous silicon (a-Si:H) film capped with silicon nitride (SiN{sub x}) is shown to provide a high level passivation to crystalline silicon (c-Si) surfaces. When passivated by a 0.8 nm a-Si:H/75 nm SiN{sub x} stack, recombination current density J{sub 0} values of 9, 11, 47, and 87 fA/cm{sup 2} are obtained on 10 Ω·cm n-type, 0.8 Ω·cm p-type, 160 Ω/sq phosphorus-diffused, and 120 Ω/sq boron-diffused silicon surfaces, respectively. The J{sub 0} on n-type 10 Ω·cm wafers is further reduced to 2.5 ± 0.5 fA/cm{sup 2} when the a-Si:H film thickness exceeds 2.5 nm. The passivation by the sub-nm a-Si:H/SiN{sub x} stack is thermally stable at 400 °C in N{sub 2} formore » 60 min on all four c-Si surfaces. Capacitance–voltage measurements reveal a reduction in interface defect density and film charge density with an increase in a-Si:H thickness. The nearly transparent sub-nm a-Si:H/SiN{sub x} stack is thus demonstrated to be a promising surface passivation and antireflection coating suitable for all types of surfaces encountered in high efficiency c-Si solar cells.« less

Cytocompatibility evaluation of gum Arabic-coated ultra-pure boron nitride nanotubes on human cells.

PubMed

Ciofani, Gianni; Del Turco, Serena; Rocca, Antonella; de Vito, Giuseppe; Cappello, Valentina; Yamaguchi, Maho; Li, Xia; Mazzolai, Barbara; Basta, Giuseppina; Gemmi, Mauro; Piazza, Vincenzo; Golberg, Dmitri; Mattoli, Virgilio

2014-05-01

Boron nitride nanotubes (BNNTs) are tubular nanoparticles with a structure analogous to that of carbon nanotubes, but with B and N atoms that completely replace the C atoms. Many favorable results indicate BNNTs as safe nanomaterials; however, important concerns have recently been raised about ultra-pure, long (~10 µm) BNNTs tested on several cell types. Here, we propose additional experiments with the same BNNTs, but shortened (~1.5 µm) with a homogenization/sonication treatment that allows for their dispersion in gum Arabic aqueous solutions. Obtained BNNTs are tested on human endothelial and neuron-like cells with several independent biocompatibility assays. Moreover, for the first time, their strong sum-frequency generation signal is exploited to assess the cellular uptake. Our data demonstrate no toxic effects up to concentrations of 20 µg/ml, once more confirming biosafety of BNNTs, and again highlighting that nanoparticle aspect ratio plays a key role in the biocompatibility evaluation.

Boron nitride nanotubes matrix for signal enhancement in infrared laser desorption postionization mass spectrometry.

PubMed

Lu, Qiao; Hu, Yongjun; Chen, Jiaxin; Li, Yujian; Song, Wentao; Jin, Shan; Liu, Fuyi; Sheng, Liusi

2018-09-01

The nanomaterials function as the substrate to trap analytes, absorb energy from the laser irradiation and transfer energy to the analytes to facilitate the laser desorption process. In this work, the signal intensity and reproducibility of analytes with nanomaterials as matrices were explored by laser desorption postionization mass spectrometry (LDPI-MS). Herein, the desorbed neutral species were further ionized by vacuum ultraviolet (VUV, 118 nm) and analyzed by mass spectrometer. Compared with other nanomaterial matrices such as graphene and carbon nanotubes (CNTs), boron nitride nanotubes (BNNTs) exhibited much higher desorption efficiency under infrared (IR) light and produced no background signal in the whole mass range by LDPI-MS. Additionally, this method was successfully and firstly exploited to in situ detection and imaging for drugs of low concentration in intact tissues, which proved the utility, facility and convenience of this method applied in drug discovery and biomedical research. Copyright © 2018 Elsevier B.V. All rights reserved.

Electronic structure and optical properties of boron nitride nanotube bundles from first principles

NASA Astrophysics Data System (ADS)

Behzad, Somayeh

2015-06-01

The electronic and optical properties of bundled armchair and zigzag boron nitride nanotubes (BNNTs) are investigated by using density functional theory. Owing to the inter-tube coupling, the dispersions along the tube axis and in the plane perpendicular to the tube axis of BNNT bundles are significantly varied, which are characterized by the decrease of band gap, the splitting of the doubly degenerated states, the expansions of valence and conduction bands. The calculated dielectric functions of the armchair and zigzag bundles are similar to that of the isolated tubes, except for the appearance of broadened peaks, small shifts of peak positions about 0.1 eV and increasing of peak intensities.

Comparison of dynamic fatigue behavior between SiC whisker-reinforced composite and monolithic silicon nitrides

NASA Technical Reports Server (NTRS)

Choi, Sung R.; Salem, Jonathan A.

1991-01-01

The dynamic fatigue behavior of 30 vol percent silicon nitride whisker-reinforced composite and monolithic silicon nitrides were determined as a function of temperature from 1100 to 1300 C in ambient air. The fatigue susceptibility parameter, n, decreased from 88.1 to 20.1 for the composite material, and from 50.8 to 40.4 for the monolithic, with increasing temperature from 1100 to 1300 C. A transition in the dynamic fatigue curve occurred for the composite material at a low stressing rate of 2 MPa/min at 1300 C, resulting in a very low value of n equals 5.8. Fractographic analysis showed that glassy phases in the slow crack growth region were more pronounced in the composite compared to the monolithic material, implying that SiC whisker addition promotes the formation of glass rich phases at the grain boundaries, thereby enhancing fatigue. These results indicate that SiC whisker addition to Si3 N4 matrix substantially deteriorates fatigue resistance inherent to the matrix base material for this selected material system.

Laser-induced amorphization of silicon during pulsed-laser irradiation of TiN/Ti/polycrystalline silicon/SiO2/silicon

NASA Astrophysics Data System (ADS)

Chong, Y. F.; Pey, K. L.; Wee, A. T. S.; Thompson, M. O.; Tung, C. H.; See, A.

2002-11-01

In this letter, we report on the complex solidification structures formed during laser irradiation of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack. Due to enhanced optical coupling, the titanium nitride/titanium capping layer increases the melt depth of polycrystalline silicon by more than a factor of 2. It is found that the titanium atoms diffuse through the entire polycrystalline silicon layer during irradiation. Contrary to the expected polycrystalline silicon growth, distinct regions of polycrystalline and amorphous silicon are formed instead. Possible mechanisms for the formation of these microstructures are proposed.

A Thermodynamic Model to Estimate the Formation of Complex Nitrides of Al x Mg(1- x)N in Silicon Steel

NASA Astrophysics Data System (ADS)

Luo, Yan; Zhang, Lifeng; Li, Ming; Sridhar, Seetharaman

2018-06-01

A complex nitride of Al x Mg(1- x)N was observed in silicon steels. A thermodynamic model was developed to predict the ferrite/nitride equilibrium in the Fe-Al-Mg-N alloy system, using published binary solubility products for stoichiometric phases. The model was used to estimate the solubility product of nitride compound, equilibrium ferrite, and nitride compositions, and the amounts of each phase, as a function of steel composition and temperature. In the current model, the molar ratio Al/(Al + Mg) in the complex nitride was great due to the low dissolved magnesium in steel. For a steel containing 0.52 wt pct Als, 10 ppm T.Mg., and 20 ppm T.N. at 1100 K (827 °C), the complex nitride was expressed by Al0.99496Mg0.00504N and the solubility product of this complex nitride was 2.95 × 10-7. In addition, the solution temperature of the complex nitride increased with increasing the nitrogen and aluminum in steel. The good agreement between the prediction and the detected precipitate compositions validated the current model.

Local Coulomb explosion of boron nitride nanotubes under electron beam irradiation.

PubMed

Wei, Xianlong; Tang, Dai-Ming; Chen, Qing; Bando, Yoshio; Golberg, Dmitri

2013-04-23

In many previous reports, the engineering of nanostructures using electron beam irradiation (EBI) in a high vacuum has primarily been based on the knock-on atom displacement. Herein, we report a new phenomenon under EBI that can also be effectively used to engineer a nanostructure: local Coulomb explosion (LCE) of cantilevered multiwalled boron nitride nanotubes (BNNTs) resulted from their profound positive charging. The nanotubes are gradually shortened, while the tubular shells at free ends are torn into graphene-like pieces and then removed during LCE. The phenomenon is dependent not only on the characteristics of an incident electron beam, as in the case of a common knock-on process, but also on the cantilevered tube length. Only after the electron beam density and tube length exceed the threshold values can LCE take place, and the threshold value for one of the parameters decreases with increasing the value of the other one. A model based on the diffusion of electron-irradiation-induced holes along a BNNT is proposed to describe the positive charge accumulation and can well explain the observed LCE. LCE opens up an efficient and versatile way to engineer BNNTs and other dielectric nanostructures with a shorter time and a lower beam density than those required for the knock-on effect-based engineering.

Theoretic Study on Dispersion Mechanism of Boron Nitride Nanotubes by Polynucleotides

PubMed Central

Liang, Lijun; Hu, Wei; Zhang, Zhisen; Shen, Jia-Wei

2016-01-01

Due to the unique electrical and mechanical properties of boron nitride nanotubes (BNNT), BNNT has been a promising material for many potential applications, especially in biomedical field. Understanding the dispersion of BNNT in aqueous solution by biomolecules is essential for its use in biomedical applications. In this study, BNNT wrapped by polynucleotides in aqueous solution was investigated by molecular dynamics (MD) simulations. Our results demonstrated that the BNNT wrapped by polynucleotides could greatly hinder the aggregation of BNNTs and improve the dispersion of BNNTs in aqueous solution. Dispersion of BNNTs with the assistance of polynucleotides is greatly affected by the wrapping manner of polynucleotides on BNNT, which mainly depends on two factors: the type of polynucleotides and the radius of BNNT. The interaction between polynucleotides and BNNT(9, 9) is larger than that between polynucleotides and BNNT(5, 5), which leads to the fact that dispersion of BNNT(9, 9) is better than that of BNNT(5, 5) with the assistance of polynucleotides in aqueous solution. Our study revealed the molecular-level dispersion mechanism of BNNT with the assistance of polynucleotides in aqueous solution. It shades a light on the understanding of dispersion of single wall nanotubes by biomolecules. PMID:28004832

Boron Nitride Coated Carbon Nanotube Arrays with Enhanced Compressive Mechanical Property

NASA Astrophysics Data System (ADS)

Jing, Lin; Tay, Roland Yingjie; Li, Hongling; Tsang, Siu Hon; Tan, Dunlin; Zhang, Bowei; Tok, Alfred Iing Yoong; Teo, Edwin Hang Tong

Vertically aligned carbon nanotube (CNT) array is one of the most promising energy dissipating materials due to its excellent temperature invariant mechanical property. However, the CNT arrays with desirable recoverability after compression is still a challenge. Here, we report on the mechanical enhancement of the CNT arrays reinforced by coating with boron nitride (BN) layers. These BN coated CNT (BN/CNT) arrays exhibit excellent compressive strength and recoverability as compared to those of the as-prepared CNT arrays which totally collapsed after compression. In addition, the BN coating also provides better resistance to oxidation due to its intrinsic thermal stability. This work presented here opens a new pathway towards tuning mechanical behavior of any arbitrary CNT arrays for promising potential such as damper, vibration isolator and shock absorber applications.

Mechanical behavior and failure phenomenon of an in situ-toughened silicon nitride

NASA Technical Reports Server (NTRS)

Salem, Jonathan A.; Choi, Sung R.; Freedman, Marc R.; Jenkins, Michael G.

1990-01-01

The Weibull modulus, fracture toughness and crack growth resistance of an in-situ toughened, silicon nitride material used to manufacture a turbine combustor were determined from room temperature to 1371 C. The material exhibited an elongated grain structure that resulted in improved fracture toughness, nonlinear crack growth resistance, and good elevated temperature strength. However, low temperature strength was limited by grains of excessive length (30 to 100 microns). These excessively long grains were surrounded by regions rich in sintering additives.

Core-shell titanium dioxide-titanium nitride nanotube arrays with near-infrared plasmon resonances

NASA Astrophysics Data System (ADS)

Farsinezhad, Samira; Shanavas, Thariq; Mahdi, Najia; Askar, Abdelrahman M.; Kar, Piyush; Sharma, Himani; Shankar, Karthik

2018-04-01

Titanium nitride (TiN) is a ceramic with high electrical conductivity which in nanoparticle form, exhibits localized surface plasmon resonances (LSPRs) in the visible region of the solar spectrum. The ceramic nature of TiN coupled with its dielectric loss factor being comparable to that of gold, render it attractive for CMOS polarizers, refractory plasmonics, surface-enhanced Raman scattering and a whole host of sensing applications. We report core-shell TiO2-TiN nanotube arrays exhibiting LSPR peaks in the range 775-830 nm achieved by a simple, solution-based, low cost, large area-compatible fabrication route that does not involve laser-writing or lithography. Self-organized, highly ordered TiO2 nanotube arrays were grown by electrochemical anodization of Ti thin films on fluorine-doped tin oxide-coated glass substrates and then conformally coated with a thin layer of TiN using atomic layer deposition. The effects of varying the TiN layer thickness and thermal annealing on the LSPR profiles were also investigated. Modeling the TiO2-TiN core-shell nanotube structure using two different approaches, one employing effective medium approximations coupled with Fresnel coefficients, resulted in calculated optical spectra that closely matched the experimentally measured spectra. Modeling provided the insight that the observed near-infrared resonance was not collective in nature, and was mainly attributable to the longitudinal resonance of annular nanotube-like TiN particles redshifted due to the presence of the higher permittivity TiO2 matrix. The resulting TiO2-TiN core-shell nanotube structures also function as visible light responsive photocatalysts, as evidenced by their photoelectrochemical water-splitting performance under light emitting diode illumination using 400, 430 and 500 nm photons.

Review of corrosion behavior of ceramic heat exchanger materals: Corrosion characteristics of silicon carbide and silicon nitride. Final report, September 11, 1992--March 11, 1993

DOE Office of Scientific and Technical Information (OSTI.GOV)

Munro, R.G.; Dapkunas, S.J.

1993-09-01

The present work is a review of the substantial effort that has been made to measure and understand the effects of corrosion with respect to the properties, performance, and durability of various forms of silicon carbide and silicon nitride. The review encompasses corrosion in diverse environments, usually at temperatures of 1000C or higher. The environments include dry and moist oxygen, mixtures of hot gaseous vapors, molten salts, molten metals, and complex environments pertaining to coal ashes and slags.

Robust half-metallic ferromagnetism and curvature dependent magnetic coupling in fluorinated boron nitride nanotubes.

PubMed

Guo, Chunsheng; Zhou, Yu; Shi, Xin-Qiang; Gan, Li-Yong; Jiang, Hong; Zhao, Yong

2016-04-28

The fluorinated boron nitride (F-BN) nanostructures are found to be fully spin polarized and half-metallic by means of first-principles calculations based on the Heyd-Scuseria-Ernzerhof hybrid functional. It is found that the full spin polarization and 1 μB local moment in F-BN nanotubes are independent of tube radius and it is also robust in planar ribbons and sheets. The long-ranged ferromagnetic coupling between local moments decreases with decreasing tube radius. This suggests that F-BN systems with small local curvatures could be more easily experimentally observed and have greater potential applications in spin devices.

Synthesis and Investigation of Millimeter-Scale Vertically Aligned Boron Nitride Nanotube Arrays

NASA Astrophysics Data System (ADS)

Tay, Roland; Li, Hongling; Tsang, Siu Hon; Jing, Lin; Tan, Dunlin; Teo, Edwin Hang Tong

Boron nitride nanotubes (BNNTs) have shown potential in a wide range of applications due to their superior properties such as exceptionally high mechanical strength, excellent chemical and thermal stabilities. However, previously reported methods to date only produced BNNTs with limited length/density and insufficient yield at high temperatures. Here we present a facile and effective two-step synthesis route involving template-assisted chemical vapor deposition at a relatively low temperature of 900 degree C and subsequent annealing process to fabricate vertically aligned (VA) BN coated carbon nanotube (VA-BN/CNT) and VA-BNNT arrays. By using this method, we achieve the longest VA-BN/CNTs and VA-BNNTs to date with lengths of over millimeters (exceeding two orders of magnitude longer than the previously reported length of VA-BNNTs). In addition, the morphology, chemical composition and microstructure of the resulting products, as well as the mechanism of coating process are systematically investigated. This versatile BN coating technique and the synthesis of millimeter-scale BN/CNT and BNNT arrays pave a way for new applications especially where the aligned geometry of the NTs is essential such as for field-emission, interconnects and thermal management.

Dispersion engineering of thick high-Q silicon nitride ring-resonators via atomic layer deposition.

PubMed

Riemensberger, Johann; Hartinger, Klaus; Herr, Tobias; Brasch, Victor; Holzwarth, Ronald; Kippenberg, Tobias J

2012-12-03

We demonstrate dispersion engineering of integrated silicon nitride based ring resonators through conformal coating with hafnium dioxide deposited on top of the structures via atomic layer deposition. Both, magnitude and bandwidth of anomalous dispersion can be significantly increased. The results are confirmed by high resolution frequency-comb-assisted-diode-laser spectroscopy and are in very good agreement with the simulated modification of the mode spectrum.

Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

NASA Astrophysics Data System (ADS)

Lee, Kwang Hong; Bao, Shuyu; Wang, Yue; Fitzgerald, Eugene A.; Seng Tan, Chuan

2018-01-01

The material properties and bonding behavior of silane-based silicon oxide layers deposited by plasma-enhanced chemical vapor deposition were investigated. Fourier transform infrared spectroscopy was employed to determine the chemical composition of the silicon oxide films. The incorporation of hydroxyl (-OH) groups and moisture absorption demonstrates a strong correlation with the storage duration for both as-deposited and annealed silicon oxide films. It is observed that moisture absorption is prevalent in the silane-based silicon oxide film due to its porous nature. The incorporation of -OH groups and moisture absorption in the silicon oxide films increase with the storage time (even in clean-room environments) for both as-deposited and annealed silicon oxide films. Due to silanol condensation and silicon oxidation reactions that take place at the bonding interface and in the bulk silicon, hydrogen (a byproduct of these reactions) is released and diffused towards the bonding interface. The trapped hydrogen forms voids over time. Additionally, the absorbed moisture could evaporate during the post-bond annealing of the bonded wafer pair. As a consequence, defects, such as voids, form at the bonding interface. To address the problem, a thin silicon nitride capping film was deposited on the silicon oxide layer before bonding to serve as a diffusion barrier to prevent moisture absorption and incorporation of -OH groups from the ambient. This process results in defect-free bonded wafers.

Aligned carbon nanotube-silicon sheets: a novel nano-architecture for flexible lithium ion battery electrodes.

PubMed

Fu, Kun; Yildiz, Ozkan; Bhanushali, Hardik; Wang, Yongxin; Stano, Kelly; Xue, Leigang; Zhang, Xiangwu; Bradford, Philip D

2013-09-25

Aligned carbon nanotube sheets provide an engineered scaffold for the deposition of a silicon active material for lithium ion battery anodes. The sheets are low-density, allowing uniform deposition of silicon thin films while the alignment allows unconstrained volumetric expansion of the silicon, facilitating stable cycling performance. The flat sheet morphology is desirable for battery construction. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electroformed silicon nitride based light emitting memory device

NASA Astrophysics Data System (ADS)

Anutgan, Tamila; Anutgan, Mustafa; Atilgan, Ismail; Katircioglu, Bayram

2017-07-01

The resistive memory switching effect of an electroformed nanocrystal silicon nitride thin film light emitting diode (LED) is demonstrated. For this purpose, current-voltage (I-V) characteristics of the diode were systematically scanned, paying particular attention to the sequence of the measurements. It was found that when the voltage polarity was changed from reverse to forward, the previously measured reverse I-V behavior was remembered until some critical forward bias voltage. Beyond this critical voltage, the I-V curve returns to its original state instantaneously, and light emission switches from the OFF state to the ON state. The kinetics of this switching mechanism was studied for different forward bias stresses by measuring the corresponding time at which the switching occurs. Finally, the switching of resistance and light emission states was discussed via energy band structure of the electroformed LED.

Boron nitride nanotubes for spintronics.

PubMed

Dhungana, Kamal B; Pati, Ranjit

2014-09-22

With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics.

Boron Nitride Nanotubes for Spintronics

PubMed Central

Dhungana, Kamal B.; Pati, Ranjit

2014-01-01

With the end of Moore's law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers exciting opportunities to sustain the current growth in the information industry. For example, the discovery of the giant magneto resistance (GMR) effect, which provides the foundation behind modern high density data storage devices, is an important success story of spintronics; GMR-based sensors have wide applications, ranging from automotive industry to biology. In recent years, with the tremendous progress in nanotechnology, spintronics has crossed the boundary of conventional, all metallic, solid state multi-layered structures to reach a new frontier, where nanostructures provide a pathway for the spin-carriers. Different materials such as organic and inorganic nanostructures are explored for possible applications in spintronics. In this short review, we focus on the boron nitride nanotube (BNNT), which has recently been explored for possible applications in spintronics. Unlike many organic materials, BNNTs offer higher thermal stability and higher resistance to oxidation. It has been reported that the metal-free fluorinated BNNT exhibits long range ferromagnetic spin ordering, which is stable at a temperature much higher than room temperature. Due to their large band gap, BNNTs are also explored as a tunnel magneto resistance device. In addition, the F-BNNT has recently been predicted as an ideal spin-filter. The purpose of this review is to highlight these recent progresses so that a concerted effort by both experimentalists and theorists can be carried out in the future to realize the true potential of BNNT-based spintronics. PMID:25248070

Demonstration of a silicon nitride attrition mill for production of fine pure Si and Si3N4 powders

NASA Technical Reports Server (NTRS)

Herbell, T. P.; Glasgow, T. K.; Orth, N. W.

1984-01-01

To avoid metallic impurities normally introduced by milling ceramic powders in conventional steel hardware, an attrition mill (high-energy stirred ball mill) was constructed with the wearing parts (mill body, stirring arms, and media) made from silicon nitride. Commercial silicon and Si3N4 powders were milled to fine uniform particles with only minimal contamination - primarily from wear of the sintered Si3N4 media.

Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wilking, S., E-mail: Svenja.Wilking@uni-konstanz.de; Ebert, S.; Herguth, A.

The degradation effect boron doped and oxygen-rich crystalline silicon materials suffer from under illumination can be neutralized in hydrogenated silicon by the application of a regeneration process consisting of a combination of slightly elevated temperature and carrier injection. In this paper, the influence of variations in short high temperature steps on the kinetics of the regeneration process is investigated. It is found that hotter and longer firing steps allowing an effective hydrogenation from a hydrogen-rich silicon nitride passivation layer result in an acceleration of the regeneration process. Additionally, a fast cool down from high temperature to around 550 °C seems tomore » be crucial for a fast regeneration process. It is suggested that high cooling rates suppress hydrogen effusion from the silicon bulk in a temperature range where the hydrogenated passivation layer cannot release hydrogen in considerable amounts. Thus, the hydrogen content of the silicon bulk after the complete high temperature step can be increased resulting in a faster regeneration process. Hence, the data presented here back up the theory that the regeneration process might be a hydrogen passivation of boron-oxygen related defects.« less

Ammonium-tungstate-promoted growth of boron nitride nanotubes

NASA Astrophysics Data System (ADS)

E, Songfeng; Li, Chaowei; Li, Taotao; Geng, Renjie; Li, Qiulong; Lu, Weibang; Yao, Yagang

2018-05-01

Ammonium tungstate ((NH4)10W12O41 · xH2O) is a kind of oxygen-containing ammonium salt. The following study proves that it can be successfully used as a metal oxide alternative to produce boron oxide (B2O2) by oxidizing boron (B) in a traditional boron oxide chemical vapor deposition (BOCVD) process. This special oxidant promotes the simplistic fabrication of boron nitride nanotubes (BNNTs) in a conventional horizontal tube furnace, an outcome which may have resulted from its strong oxidizability. The experimental results demonstrate that the mole ratio of B and (NH4)10W12O41 · xH2O is a key parameter in determining the formation, quality and quantity of BNNTs when stainless steel is employed as a catalyst. We also found that Mg(NO3)2 and MgO nanoparticles (NPs) can be used as catalysts to grow BNNTs with the same precursor. The BNNTs obtained from the Mg(NO3)2 catalyst were straighter than those obtained from the MgO NP catalyst. This could have been due to the different physical forms of the catalysts that were used.

Ammonium-tungstate-promoted growth of boron nitride nanotubes.

PubMed

E, Songfeng; Li, Chaowei; Li, Taotao; Geng, Renjie; Li, Qiulong; Lu, Weibang; Yao, Yagang

2018-05-11

Ammonium tungstate ((NH 4 ) 10 W 12 O 41  · xH 2 O) is a kind of oxygen-containing ammonium salt. The following study proves that it can be successfully used as a metal oxide alternative to produce boron oxide (B 2 O 2 ) by oxidizing boron (B) in a traditional boron oxide chemical vapor deposition (BOCVD) process. This special oxidant promotes the simplistic fabrication of boron nitride nanotubes (BNNTs) in a conventional horizontal tube furnace, an outcome which may have resulted from its strong oxidizability. The experimental results demonstrate that the mole ratio of B and (NH 4 ) 10 W 12 O 41  · xH 2 O is a key parameter in determining the formation, quality and quantity of BNNTs when stainless steel is employed as a catalyst. We also found that Mg(NO 3 ) 2 and MgO nanoparticles (NPs) can be used as catalysts to grow BNNTs with the same precursor. The BNNTs obtained from the Mg(NO 3 ) 2 catalyst were straighter than those obtained from the MgO NP catalyst. This could have been due to the different physical forms of the catalysts that were used.

High Temperature Corrosion of Silicon Carbide and Silicon Nitride in Water Vapor

NASA Technical Reports Server (NTRS)

Opila, E. J.; Robinson, Raymond C.; Cuy, Michael D.; Gray, Hugh R. (Technical Monitor)

2002-01-01

Silicon carbide (SiC) and silicon nitride (Si3N4) are proposed for applications in high temperature combustion environments containing water vapor. Both SiC and Si3N4 react with water vapor to form a silica (SiO2) scale. It is therefore important to understand the durability of SiC, Si3N4 and SiO2 in water vapor. Thermogravimetric analyses, furnace exposures and burner rig results were obtained for these materials in water vapor at temperatures between 1100 and 1450 C and water vapor partial pressures ranging from 0.1 to 3.1 atm. First, the oxidation of SiC and Si3N4 in water vapor is considered. The parabolic kinetic rate law, rate dependence on water vapor partial pressure, and oxidation mechanism are discussed. Second, the volatilization of silica to form Si(OH)4(g) is examined. Mass spectrometric results, the linear kinetic rate law and a volatilization model based on diffusion through a gas boundary layer are discussed. Finally, the combined oxidation and volatilization reactions, which occur when SiC or Si3N4 are exposed in a water vapor-containing environment, are presented. Both experimental evidence and a model for the paralinear kinetic rate law are shown for these simultaneous oxidation and volatilization reactions.

In situ TEM study of lithiation behavior of silicon nanoparticles attached to and embedded in a carbon matrix.

PubMed

Gu, Meng; Li, Ying; Li, Xiaolin; Hu, Shenyang; Zhang, Xiangwu; Xu, Wu; Thevuthasan, Suntharampillai; Baer, Donald R; Zhang, Ji-Guang; Liu, Jun; Wang, Chongmin

2012-09-25

Rational design of silicon and carbon nanocomposite with a special topological feature has been demonstrated to be a feasible way for mitigating the capacity fading associated with the large volume change of silicon anode in lithium ion batteries. Although the lithiation behavior of silicon and carbon as individual components has been well understood, lithium ion transport behavior across a network of silicon and carbon is still lacking. In this paper, we probe the lithiation behavior of silicon nanoparticles attached to and embedded in a carbon nanofiber using in situ TEM and continuum mechanical calculation. We found that aggregated silicon nanoparticles show contact flattening upon initial lithiation, which is characteristically analogous to the classic sintering of powder particles by a neck-growth mechanism. As compared with the surface-attached silicon particles, particles embedded in the carbon matrix show delayed lithiation. Depending on the strength of the carbon matrix, lithiation of the embedded silicon nanoparticles can lead to the fracture of the carbon fiber. These observations provide insights on lithium ion transport in the network-structured composite of silicon and carbon and ultimately provide fundamental guidance for mitigating the failure of batteries due to the large volume change of silicon anodes.

Structural Analysis of a Magnetically Actuated Silicon Nitride Micro-Shutter for Space Applications

NASA Technical Reports Server (NTRS)

Loughlin, James P.; Fettig, Rainer K.; Moseley, S. Harvey; Kutyrev, Alexander S.; Mott, D. Brent; Obenschain, Arthur F. (Technical Monitor)

2002-01-01

Finite element models have been created to simulate the electrostatic and electromagnetic actuation of a 0.5 micrometers silicon nitride micro-shutter for use in a spacebased Multi-object Spectrometer (MOS). The microshutter uses a torsion hinge to go from the closed, 0 degree, position, to the open, 90 degree position. Stresses in the torsion hinge are determined with a large deformation nonlinear finite element model. The simulation results are compared to experimental measurements of fabricated micro-shutter devices.

Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming Scheme

NASA Astrophysics Data System (ADS)

Li, Fu-Hai; Chiu, Yung-Yueh; Lee, Yen-Hui; Chang, Ru-Wei; Yang, Bo-Jun; Sun, Wein-Town; Lee, Eric; Kuo, Chao-Wei; Shirota, Riichiro

2013-04-01

In this study, we precisely investigate the charge distribution in SiN layer by dynamic programming of channel hot hole induced hot electron injection (CHHIHE) in p-channel silicon-oxide-nitride-oxide-silicon (SONOS) memory device. In the dynamic programming scheme, gate voltage is increased as a staircase with fixed step amplitude, which can prohibits the injection of holes in SiN layer. Three-dimensional device simulation is calibrated and is compared with the measured programming characteristics. It is found, for the first time, that the hot electron injection point quickly traverses from drain to source side synchronizing to the expansion of charged area in SiN layer. As a result, the injected charges quickly spread over on the almost whole channel area uniformly during a short programming period, which will afford large tolerance against lateral trapped charge diffusion by baking.

Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ishii, Akihiro; He, Xiaowei; Hartmann, Nicolai F.

Single-walled carbon nanotubes are a promising material as quantum light sources at room temperature and as nanoscale light sources for integrated photonic circuits on silicon. Here, we show that the integration of dopant states in carbon nanotubes and silicon microcavities can provide bright and high-purity single-photon emitters on a silicon photonics platform at room temperature. We perform photoluminescence spectroscopy and observe the enhancement of emission from the dopant states by a factor of ~50, and cavity-enhanced radiative decay is confirmed using time-resolved measurements, in which a ~30% decrease of emission lifetime is observed. The statistics of photons emitted from themore » cavity-coupled dopant states are investigated by photon-correlation measurements, and high-purity single photon generation is observed. The excitation power dependence of photon emission statistics shows that the degree of photon antibunching can be kept high even when the excitation power increases, while the single-photon emission rate can be increased to ~1.7 × 10 7 Hz.« less

Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities

DOE PAGES

Ishii, Akihiro; He, Xiaowei; Hartmann, Nicolai F.; ...

2018-05-21

Single-walled carbon nanotubes are a promising material as quantum light sources at room temperature and as nanoscale light sources for integrated photonic circuits on silicon. Here, we show that the integration of dopant states in carbon nanotubes and silicon microcavities can provide bright and high-purity single-photon emitters on a silicon photonics platform at room temperature. We perform photoluminescence spectroscopy and observe the enhancement of emission from the dopant states by a factor of ~50, and cavity-enhanced radiative decay is confirmed using time-resolved measurements, in which a ~30% decrease of emission lifetime is observed. The statistics of photons emitted from themore » cavity-coupled dopant states are investigated by photon-correlation measurements, and high-purity single photon generation is observed. The excitation power dependence of photon emission statistics shows that the degree of photon antibunching can be kept high even when the excitation power increases, while the single-photon emission rate can be increased to ~1.7 × 10 7 Hz.« less

Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Yimao, E-mail: yimao.wan@anu.edu.au; Bullock, James; Cuevas, Andres

2015-05-18

This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta{sub 2}O{sub 5}) underneath plasma enhanced chemical vapour deposited silicon nitride (SiN{sub x}). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta{sub 2}O{sub 5} and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω·cm and n-type 1.0 Ω·cm c-Si wafers, respectively. Recombination current densities of 25 fA/cm{sup 2} and 68 fA/cm{sup 2} are measured on 150 Ω/sq boron-diffused p{sup +} and 120 Ω/sq phosphorus-diffused n{sup +} c-Si, respectively. Capacitance–voltage measurements reveal a negativemore » fixed insulator charge density of −1.8 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5} film and −1.0 × 10{sup 12 }cm{sup −2} for the Ta{sub 2}O{sub 5}/SiN{sub x} stack. The Ta{sub 2}O{sub 5}/SiN{sub x} stack is demonstrated to be an excellent candidate for surface passivation of high efficiency silicon solar cells.« less

Glass fabrics self-cracking catalytic growth of boron nitride nanotubes

NASA Astrophysics Data System (ADS)

Wang, Jilin; Peng, Daijang; Long, Fei; Wang, Weimin; Gu, Yunle; Mo, Shuyi; Zou, Zhengguang; Fu, Zhengyi

2017-02-01

Glass fabrics were used to fabricate boron nitride nanotubes (BNNTs) with a broad diameter range through a combined chemical vapor deposition and self-propagation high-temperature synthesis (CVD-SHS) method at different holding times (0min, 30min, 90min, 180min and 360min). SEM characterization has been employed to investigate the macro and micro structure/morphology changes of the glass fabrics and BNNTs in detail. SEM image analysis has provided direct experimental evidences for the rationality of the optimized self-cracking catalyst VLS growth mechanism, including the transformation situations of the glass fabrics and the BNNTs growth processes respectively. This paper was the further research and compensation for the theory and experiment deficiencies in the new preparation method of BNNTs reported in our previous work. In addition, it is likely that the distinctive self-cracking catalyst VLS growth mechanism could provide a new idea to preparation of other inorganic functional nano-materials using similar one-dimensional raw materials as growth templates and catalysts.

Heteroepitaxial Growth of Single-Walled Carbon Nanotubes from Boron Nitride

PubMed Central

Tang, Dai-Ming; Zhang, Li-Li; Liu, Chang; Yin, Li-Chang; Hou, Peng-Xiang; Jiang, Hua; Zhu, Zhen; Li, Feng; Liu, Bilu; Kauppinen, Esko I.; Cheng, Hui-Ming

2012-01-01

The growth of single-walled carbon nanotubes (SWCNTs) with predefined structure is of great importance for both fundamental research and their practical applications. Traditionally, SWCNTs are grown from a metal catalyst with a vapor-liquid-solid mechanism, where the catalyst is in liquid state with fluctuating structures, and it is intrinsically unfavorable for the structure control of SWCNTs. Here we report the heteroepitaxial growth of SWCNTs from a platelet boron nitride nanofiber (BNNF), which is composed of stacked (002) planes and is stable at high temperatures. SWCNTs are found to grow epitaxially from the open (002) edges of the BNNFs, and the diameters of the SWCNTs are multiples of the BN (002) interplanar distance. In situ transmission electron microscopy observations coupled with first principles calculations reveal that the growth of SWCNTs from the BNNFs follows a vapor-solid-solid mechanism. Our work opens opportunities for the control over the structure of SWCNTs by hetero-crystallographic epitaxy. PMID:23240076

Foreign Object Damage in a Gas-Turbine Grade Silicon Nitride by Spherical Projectiles of Various Materials

NASA Technical Reports Server (NTRS)

Choi, Sung R.; Racz, Zsolt; Bhatt, Ramakrishna T.; Brewer, David N.

2006-01-01

Assessments of foreign object damage (FOD) of a commercial, gas-turbine grade, in situ toughened silicon nitride ceramic (AS800, Honeywell Ceramics Components) were made using four different projectile materials at ambient temperature. AS800 flexure target specimens rigidly supported were impacted at their centers in a velocity range from 50 to 450 m/s by spherical projectiles with a diameter of 1.59 mm. Four different projectile materials were used including hardened steel, annealed steel, silicon nitride ceramic, and brass. Post-impact strength of each target specimen impacted was determined as a function of impact velocity to appraise the severity of local impact damage. For a given impact velocity, the degree of strength degradation was greatest for ceramic balls, least for brass balls, and intermediate for annealed and hardened steel balls. For steel balls, hardened projectiles yielded more significant impact damage than annealed counterparts. The most important material parameter affecting FOD was identified as hardness of projectiles. Impact load as a function of impact velocity was quasi-statically estimated based on both impact and static indentation associated data.

Controlling bottom-up rapid growth of single crystalline gallium nitride nanowires on silicon.

PubMed

Wu, Ko-Li; Chou, Yi; Su, Chang-Chou; Yang, Chih-Chaing; Lee, Wei-I; Chou, Yi-Chia

2017-12-20

We report single crystalline gallium nitride nanowire growth from Ni and Ni-Au catalysts on silicon using hydride vapor phase epitaxy. The growth takes place rapidly; efficiency in time is higher than the conventional nanowire growth in metal-organic chemical vapor deposition and thin film growth in molecular beam epitaxy. The effects of V/III ratio and carrier gas flow on growth are discussed regarding surface polarity and sticking coefficient of molecules. The nanowires of gallium nitride exhibit excellent crystallinity with smooth and straight morphology and uniform orientation. The growth mechanism follows self-assembly from both catalysts, where Au acts as a protection from etching during growth enabling the growth of ultra-long nanowires. The photoluminescence of such nanowires are adjustable by tuning the growth parameters to achieve blue emission. The practical range of parameters for mass production of such high crystal quality and uniformity of nanowires is suggested.

Effect of Nanotube Film Thickness on the Performance of Nanotube-Silicon Hybrid Solar Cells

PubMed Central

Tune, Daniel D.; Shapter, Joseph G.

2013-01-01

The results of measurements on solar cells made from randomly aligned thin films of single walled carbon nanotubes (SWCNTs) on n-type monocrystalline silicon are presented. The films are made by vacuum filtration from aqueous TritonX-100 suspensions of large diameter arc-discharge SWCNTs. The dependence of the solar cell performance on the thickness of the SWCNT film is shown in detail, as is the variation in performance due to doping of the SWCNT film with SOCl2. PMID:28348358

Modeling of a UV laser beam—silicon nitride interaction

NASA Astrophysics Data System (ADS)

Dgheim, J. A.

2016-11-01

A numerical model is developed to study heat and radiation transfers during the interaction between a UV laser beam and silicon nitride. The laser beam has temporal Gaussian or Gate shapes of a wavelength of 247 nm, with pulse duration of 27 ns. The mathematical model is based on the heat equation coupled to Lambert-Beer relationship by taking into account the conduction, convection and radiation phenomena. The resulting equations are schemed by the finite element method. Comparison with the literature shows qualitative and quantitative agreements. The investigated parameters are the temperature, the timing of the melting process and the melting phase thickness. The effects of the laser fluences, ranging from 500 to 16 000 J.m-2, the Gaussian and Gate shapes on the heat transfer, and the melting phenomenon are studied.

Nanoprobe studies: Electrical transport in carbon nanotubes and crystal structure of aluminum nitride surfaces

NASA Astrophysics Data System (ADS)

Biswas, Sujit Kumar

Nanoprobes are an extraordinary set of experimental tools that allow fabrication, manipulation, and measurement in nano-scale systems. The primary use of a nanoprobe for imaging tiny objects is supplemented by powerful electrical techniques, namely scanning surface potential microscopy and current sensing atomic force microscopy. They allow us to measure potential, and current in carbon nanotube circuits. Nanoprobes are superior to conventional two- or four-probe measurements because they can provide spatial information of local electronic properties. This makes them highly attractive in studying junctions and contacts with carbon nanotubes. We have studied single-walled carbon nanotube circuits, forming junctions to other nanotubes. The experimental results indicate that these junctions act like potential barriers of about 50 meV that can confine electrons with an effective mass of 0.003 me , within nanotube channels of length 0.5 mum lying in-between two such potential barriers. This leads to quantization of the channel, forming a resonant tunneling structure. We have also found that single-walled nanotubes have phase coherence lengths of the order of 1 mum. This leads to situations where the electron interference effects at scattering centers need to be considered. We have seen direct evidence of this, in the non-linear resistance increase within nanotubes with few defects. Ambipolar transistor behavior was measured in a p-type single-walled nanotube circuit that showed electron injection across the Schottky junction at high positive bias. We have also studied multi-walled carbon nanotube circuits using scanning potential microscopy, and found that a back gate potential can vary the resistance of the channel. Vertical nanotube arrays, suitable for interconnects, were also measured. These hollow multi-walled nanotube channels were about 45 nm in diameter, and 50 mum in length, fabricated in an anodized alumina template. We found that these structures could

Realizing topological edge states in a silicon nitride microring-based photonic integrated circuit.

PubMed

Yin, Chenxuan; Chen, Yujie; Jiang, Xiaohui; Zhang, Yanfeng; Shao, Zengkai; Xu, Pengfei; Yu, Siyuan

2016-10-15

Topological edge states in a photonic integrated circuit based on the platform of silicon nitride are demonstrated with a two-dimensional coupled resonator optical waveguide array involving the synthetic magnetic field for photons at near-infrared wavelengths. Measurements indicate that the topological edge states can be observed at certain wavelengths, with light travelling around the boundary of the array. Combined with the induced disorders in fabrication near the edge, the system shows the defect immunity under the topological protection of edge states.

Silicon-embedded copper nanostructure network for high energy storage

DOEpatents

Yu, Tianyue

2016-03-15

Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.

Silicon-embedded copper nanostructure network for high energy storage

DOEpatents

Yu, Tianyue

2018-01-23

Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.

Atomic oxygen effects on boron nitride and silicon nitride: A comparison of ground based and space flight data

NASA Technical Reports Server (NTRS)

Cross, J. B.; Lan, E. H.; Smith, C. A.; Whatley, W. J.

1990-01-01

The effects of atomic oxygen on boron nitride (BN) and silicon nitride (Si3N4) were evaluated in a low Earth orbit (LEO) flight experiment and in a ground based simulation facility. In both the inflight and ground based experiments, these materials were coated on thin (approx. 250A) silver films, and the electrical resistance of the silver was measured in situ to detect any penetration of atomic oxygen through the BN and Si3N4 materials. In the presence of atomic oxygen, silver oxidizes to form silver oxide, which has a much higher electrical resistance than pure silver. Permeation of atomic oxygen through BN, as indicated by an increase in the electrical resistance of the silver underneath, was observed in both the inflight and ground based experiments. In contrast, no permeation of atomic oxygen through Si3N4 was observed in either the inflight or ground based experiments. The ground based results show good qualitative correlation with the LEO flight results, indicating that ground based facilities such as the one at Los Alamos National Lab can reproduce space flight data from LEO.

A comparison of ground-based and space flight data: Atomic oxygen reactions with boron nitride and silicon nitride

NASA Technical Reports Server (NTRS)

Cross, J. B.; Lan, E. H.; Smith, C. A.; Whatley, W. J.; Koontz, S. L.

1990-01-01

The effects of atomic oxygen on boron nitride (BN) and silicon nitride (Si3N4) have been studied in low Earth orbit (LEO) flight experiments and in a ground-based simulation facility at Los Alamos National Laboratory. Both the in-flight and ground-based experiments employed the materials coated over thin (approx 250 Angstrom) silver films whose electrical resistance was measured in situ to detect penetration of atomic oxygen through the BN and Si3N4 materials. In the presence of atomic oxygen, silver oxidizes to form silver oxide, which has a much higher electrical resistance than pure silver. Permeation of atomic oxygen through BN, as indicated by an increase in the electrical resistance of the silver underneath, was observed in both the in-flight and ground-based experiments. In contrast, no permeation of atomic oxygen through Si3N4 was observed in either the in-flight or ground-based experiments. The ground-based results show good qualitative correlation with the LEO flight results, thus validating the simulation fidelity of the ground-based facility in terms of reproducing LEO flight results.

Graphene and carbon nanotubes: synthesis, characterization and applications for beyond silicon electronics

NASA Astrophysics Data System (ADS)

Gomez de Arco, Lewis Mortimer

Graphene and carbon nanotubes have outstanding electrical and thermal conductivity. These characteristics make them exciting materials with high potential to replace silicon and surpass its performance in the next generation of semiconductors devices, such devices ought to be considerably smaller and faster than the ones used in present technology. Despite of the excellent electrical and thermal conduction properties of graphene and carbon nanotubes, the advance of nanoelectronics based on them has been hampered due to fundamental limitations of the current synthesis and integration technologies of these carbon nanomaterials. Therefore, there is a strong need to do research at fundamental and applicative levels to help find the roadmap that these materials need to follow, in order to become a real alternative for silicon in future technologies. This dissertation present our approach to overcome some of the most critical problems that hinder the implementation of graphene and carbon nanotubes as important components in real-life macro and nanoelectronic devices. Towards this end, we systematically studied synthesis methods for scalable, high quality graphene and evaluated our large-scale synthesized graphene as transparent electrodes in functional energy conversion devices. In addition, we explored scalable methods to obtain carbon nanotube field-effect transistors with only semiconductor nanotube channels and studied the substrate influence on the structure and metal to semiconductor ratio of aligned nanotubes. Although we have successfully tackled some of the most important challenges of the above-mentioned one- and two-dimensional carbon nanostructures, more remains to be done to integrate them as functional components in electronic devices to reach the goal of transferring them from the laboratory to the manufacturing industry, and ultimately to the society. In chapter 1, a general introduction to carbon nanomaterials is presented, followed by a more focused

Improved silicon nitride for advanced heat engines

NASA Technical Reports Server (NTRS)

Yeh, H. C.; Wimmer, J. M.; Huang, H. H.; Rorabaugh, M. E.; Schienle, J.; Styhr, K. H.

1985-01-01

The AiResearch Casting Company baseline silicon nitride (92 percent GTE SN-502 Si sub 3 N sub 4 plus 6 percent Y sub 2 O sub 3 plus 2 percent Al sub 2 O sub 3) was characterized with methods that included chemical analysis, oxygen content determination, electrophoresis, particle size distribution analysis, surface area determination, and analysis of the degree of agglomeration and maximum particle size of elutriated powder. Test bars were injection molded and processed through sintering at 0.68 MPa (100 psi) of nitrogen. The as-sintered test bars were evaluated by X-ray phase analysis, room and elevated temperature modulus of rupture strength, Weibull modulus, stress rupture, strength after oxidation, fracture origins, microstructure, and density from quantities of samples sufficiently large to generate statistically valid results. A series of small test matrices were conducted to study the effects and interactions of processing parameters which included raw materials, binder systems, binder removal cycles, injection molding temperatures, particle size distribution, sintering additives, and sintering cycle parameters.

Q factor limitation at short wavelength (around 300 nm) in III-nitride-on-silicon photonic crystal cavities

NASA Astrophysics Data System (ADS)

Tabataba-Vakili, Farsane; Roland, Iannis; Tran, Thi-Mo; Checoury, Xavier; El Kurdi, Moustafa; Sauvage, Sébastien; Brimont, Christelle; Guillet, Thierry; Rennesson, Stéphanie; Duboz, Jean-Yves; Semond, Fabrice; Gayral, Bruno; Boucaud, Philippe

2017-09-01

III-nitride-on-silicon L3 photonic crystal cavities with resonances down to 315 nm and quality factors (Q) up to 1085 at 337 nm have been demonstrated. The reduction of the quality factor with decreasing wavelength is investigated. Besides the quantum well absorption below 340 nm, a noteworthy contribution is attributed to the residual absorption present in thin AlN layers grown on silicon, as measured by spectroscopic ellipsometry. This residual absorption ultimately limits the Q factor to around 2000 at 300 nm when no active layer is present.

Deuterated silicon nitride photonic devices for broadband optical frequency comb generation

NASA Astrophysics Data System (ADS)

Chiles, Jeff; Nader, Nima; Hickstein, Daniel D.; Yu, Su Peng; Briles, Travis Crain; Carlson, David; Jung, Hojoong; Shainline, Jeffrey M.; Diddams, Scott; Papp, Scott B.; Nam, Sae Woo; Mirin, Richard P.

2018-04-01

We report and characterize low-temperature, plasma-deposited deuterated silicon nitride thin films for nonlinear integrated photonics. With a peak processing temperature less than 300$^\\circ$C, it is back-end compatible with pre-processed CMOS substrates. We achieve microresonators with a quality factor of up to $1.6\\times 10^6 $ at 1552 nm, and $>1.2\\times 10^6$ throughout $\\lambda$ = 1510 -- 1600 nm, without annealing or stress management. We then demonstrate the immediate utility of this platform in nonlinear photonics by generating a 1 THz free spectral range, 900-nm-bandwidth modulation-instability microresonator Kerr comb and octave-spanning, supercontinuum-broadened spectra.

Sublimation behavior of silicon nitride /Si3N4/ coated silicon germanium /SiGe/ unicouples. [for Radioisotope Thermoelectric Generators

NASA Technical Reports Server (NTRS)

Stapfer, G.; Truscello, V. C.

1975-01-01

For the Multi-Hundred Watt (MHW) Radioisotope Thermoelectric Generator (RTG), the silicon germanium unicouples are coated with silicon nitride to minimize degradation mechanisms which are directly attributable to material sublimation effects. A program is under way to determine the effective vapor suppression of this coating as a function of temperature and gas environment. The results of weight loss experiments, using Si3N4 coated hot shoes (SiMo), operating over a temperature range from 900 C to 1200 C, are analyzed and discussed. These experiments were conducted both in high vacuum and at different pressures of carbon monoxide (CO) to determine its effect on the coating. Although the results show a favorable vapor suppression at all operating temperatures, the pressure of the CO and the thickness of the coating have a decided effect on the useful lifetime of the coating.

Efficient Boron-Carbon-Nitrogen Nanotube Formation Via Combined Laser-Gas Flow Levitation

NASA Technical Reports Server (NTRS)

Whitney, R. Roy (Inventor); Smith, Michael W. (Inventor); Jordan, Kevin (Inventor)

2015-01-01

A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula BxCyNz. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula BxCyNz.

Interaction of carbohydrate modified boron nitride nanotubes with living cells.

PubMed

Emanet, Melis; Şen, Özlem; Çobandede, Zehra; Çulha, Mustafa

2015-10-01

Boron nitride nanotubes (BNNTs) are composed of boron and nitrogen atoms and they show significantly different properties from their carbon analogues (carbon nanotubes, CNTs). Due to their unique properties including low electrical conductivity, and imaging contrast and neutron capture properties; they can be used in biomedical applications. When their use in biological fields is considered, the route of their toxic effect should be clarified. Therefore, the study of interactions between BNNTs and living systems is important in envisaging biological applications at both cellular and sub-cellular levels to fully gain insights of their potential adverse effects. In this study, BNNTs were modified with lactose, glucose and starch and tested for their cytotoxicity. First, the interactions and the behavior of BNNTs with bovine serum albumin (BSA), Dulbecco's Modified Eagle's Medium (DMEM) and DMEM/Nutrient Mixture F-12Ham were investigated. Thereafter, their cellular uptake and the cyto- and genotoxicity on human dermal fibroblasts (HDFs) and adenocarcinoma human alveolar basal epithelial cells (A549) were evaluated. HDFs and A549 cells internalized the modified and unmodified BNNTs, and BNNTs were found to not cause significant viability change and DNA damage. A higher uptake rate of BNNTs by A549 cells compared to HDFs was observed. Moreover, a concentration-dependent cytotoxicity was observed on A549 cells while they were safer for HDFs in the same concentration range. Based on these findings, it can be concluded that BNNTs and their derivatives made with biomacromolecules might be good candidates for several applications in medicine and biomedical applications. Copyright © 2015 Elsevier B.V. All rights reserved.

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Behzad, Somayeh; Moradian, Rostam; Chegel, Raad

2010-12-01

The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.

Methods of Attaching or Grafting Carbon Nanotubes to Silicon Surfaces and Composite Structures Derived Therefrom

NASA Technical Reports Server (NTRS)

Tour, James M. (Inventor); Chen, Bo (Inventor); Flatt, Austen K. (Inventor); Stewart, Michael P. (Inventor); Dyke, Christopher A. (Inventor); Maya, Francisco (Inventor)

2012-01-01

The present invention is directed toward methods of attaching or grafting carbon nanotubes (CNTs) to silicon surfaces. In some embodiments, such attaching or grafting occurs via functional groups on either or both of the CNTs and silicon surface. In some embodiments, the methods of the present invention include: (1) reacting a silicon surface with a functionalizing agent (such as oligo(phenylene ethynylene)) to form a functionalized silicon surface; (2) dispersing a quantity of CNTs in a solvent to form dispersed CNTs; and (3) reacting the functionalized silicon surface with the dispersed CNTs. The present invention is also directed to the novel compositions produced by such methods.

Elasticity and inelasticity of silicon nitride/boron nitride fibrous monoliths.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smirnov, B. I.; Burenkov, Yu. A.; Kardashev, B. K.

A study is reported on the effect of temperature and elastic vibration amplitude on Young's modulus E and internal friction in Si{sub 3}N{sub 4} and BN ceramic samples and Si{sub 3}N{sub 4}/BN monoliths obtained by hot pressing of BN-coated Si{sub 3}N{sub 4} fibers. The fibers were arranged along, across, or both along and across the specimen axis. The E measurements were carried out under thermal cycling within the 20-600 C range. It was found that high-modulus silicon-nitride specimens possess a high thermal stability; the E(T) dependences obtained under heating and cooling coincide well with one another. The low-modulus BN ceramicmore » exhibits a considerable hysteresis, thus indicating evolution of the defect structure under the action of thermoelastic (internal) stresses. Monoliths demonstrate a qualitatively similar behavior (with hysteresis). This behavior of the elastic modulus is possible under microplastic deformation initiated by internal stresses. The presence of microplastic shear in all the materials studied is supported by the character of the amplitude dependences of internal friction and the Young's modulus. The experimental data obtained are discussed in terms of a model in which the temperature dependences of the elastic modulus and their features are accounted for by both microplastic deformation and nonlinear lattice-atom vibrations, which depend on internal stresses.« less

Novel Cyclosilazane-Type Silicon Precursor and Two-Step Plasma for Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride.

PubMed

Park, Jae-Min; Jang, Se Jin; Lee, Sang-Ick; Lee, Won-Jun

2018-03-14

We designed cyclosilazane-type silicon precursors and proposed a three-step plasma-enhanced atomic layer deposition (PEALD) process to prepare silicon nitride films with high quality and excellent step coverage. The cyclosilazane-type precursor, 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2), has a closed ring structure for good thermal stability and high reactivity. CSN-2 showed thermal stability up to 450 °C and a sufficient vapor pressure of 4 Torr at 60 °C. The energy for the chemisorption of CSN-2 on the undercoordinated silicon nitride surface as calculated by density functional theory method was -7.38 eV. The PEALD process window was between 200 and 500 °C, with a growth rate of 0.43 Å/cycle. The best film quality was obtained at 500 °C, with hydrogen impurity of ∼7 atom %, oxygen impurity less than 2 atom %, low wet etching rate, and excellent step coverage of ∼95%. At 300 °C and lower temperatures, the wet etching rate was high especially at the lower sidewall of the trench pattern. We introduced the three-step PEALD process to improve the film quality and the step coverage on the lower sidewall. The sequence of the three-step PEALD process consists of the CSN-2 feeding step, the NH 3 /N 2 plasma step, and the N 2 plasma step. The H radicals in NH 3 /N 2 plasma efficiently remove the ligands from the precursor, and the N 2 plasma after the NH 3 plasma removes the surface hydrogen atoms to activate the adsorption of the precursor. The films deposited at 300 °C using the novel precursor and the three-step PEALD process showed a significantly improved step coverage of ∼95% and an excellent wet etching resistance at the lower sidewall, which is only twice as high as that of the blanket film prepared by low-pressure chemical vapor deposition.

Synthesis of Silicon Nitride and Silicon Carbide Nanocomposites through High Energy Milling of Waste Silica Fume for Structural Applications

NASA Astrophysics Data System (ADS)

Suri, Jyothi

Nanocomposites have been widely used in a multitude of applications in electronics and structural components because of their improved mechanical, electrical, and magnetic properties. Silicon nitride/Silicon carbide (Si 3N4/SiC) nanocomposites have been studied intensively for low and high temperature structural applications, such as turbine and automobile engine components, ball bearings, turbochargers, as well as energy applications due to their superior wear resistance, high temperature strength, high oxidation resistance and good creep resistance. Silica fume is the waste material produced during the manufacture of silicon and ferro-silicon alloys, and contains 94 to 97 wt.% SiO2. In the present dissertation, the feasibility of using waste silica fume as the raw material was investigated to synthesize (I) advanced nanocomposites of Si3N4/SiC, and (2) porous silicon carbide (SiC) for membrane applications. The processing approach used to convert the waste material to advanced ceramic materials was based on a novel process called, integrated mechanical and thermal activation process (IMTA) process. In the first part of the dissertation, the effect of parameters such as carbothermic nitridation and reduction temperature and the graphite concentration in the starting silica fume plus graphite mixture, were explored to synthesize nanocomposite powders with tailored amounts of Si3N4 and SiC phases. An effective way to synthesize carbon-free Si3N 4/SiC composite powders was studied to provide a clear pathway and fundamental understanding of the reaction mechanisms. Si3N4/SiC nanocomposite powders were then sintered using two different approaches, based on liquid phase sintering and spark plasma sintering processes, with Al 2O3 and Y2O3 as the sintering aids. The nanocomposites were investigated for their densification behavior, microstructure, and mechanical properties. Si3N4/SiC nanocomposites thus obtained were found to possess superior mechanical properties at much

Boron nitride nanotubes for delivery of 5-fluorouracil as anticancer drug: a theoretical study

NASA Astrophysics Data System (ADS)

Shayan, Kolsoom; Nowroozi, Alireza

2018-01-01

The electronic structure and properties of the armchair boron nitride nanotubes (BNNTs) interacted with the 5-FU drug, as an anticancer drug, are studied at the B3LYP/6-31G(d,p) level of theory. D3-Corrections were carried out for the treatment of intermolecular interactions in the hybrid complexes and encapsulated nanotubes, exactly. Results have shown that the encapsulation and adsorption of 5-FU molecule on the studied BNNTs surface are favorable processes, with a few exceptions. Also, it is found that the encapsulated nanotubes are stable than the hybrid complexes. Furthermore, we estimated the strengths of the intermolecular bonds of the benchmark systems by energetic, geometric, topological and molecular orbital descriptors. Some analyses have been made to explore any changes in the binding characteristics of the drug molecule after its attachment to the nanotubes. According to the NBO results, the charge transfer phenomenon is observed from the bonding or nonbonding orbitals of drug to the antibonding orbitals of BNNTs. Moreover, HOMO-LUMO analysis indicated that, after the adsorption process, the HOMO value slightly increased, while the LUMO value in these systems significantly reduced in the both of Drug@BNNTs groups. So, the energy gaps between HOMO and LUMO (Eg) are reduced, which emphasis on the greater intermolecular bond strength. Finally, the stability and reactivity of the Drug@BNNTs complexes have been examined from the magnitudes of the chemical reactivity descriptors such as chemical potential, global hardness, and electrophilicity index. As a consequence, BNNTs can be considered as a drug delivery vehicle for the transportation of 5-FU as anticancer drug within the biological systems.

Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Ram Sevak, E-mail: singh915@gmail.com

2015-11-15

Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs) is systematically studied using first principle calculations based on density functional theory. Energy band structures and density of states of optimized zigzag (5, 0), armchair (3, 3), and chiral (4, 2) structures of CNT and BNNT are calculated. Oxygen doping in zigzag CNT exhibits a reduction in metallicity with opening of band gap in near-infrared region while metallicity is enhanced in armchair and chiral CNTs. Unlike oxygen-doped CNTs, energy bands are drastically modulated in oxygen-doped zigzag and armchair BNNTs, showing the nanotubes to havemore » metallic behaviour. Furthermore, oxygen impurity in chiral BNNT induces narrowing of band gap, indicating a gradual modification of electronic band structure. This study underscores the understanding of different electronic properties induced in CNTs and BNNTs under oxygen doping, and has potential in fabrication of various nanoelectronic devices.« less

Carbon Quantum Dot Implanted Graphite Carbon Nitride Nanotubes: Excellent Charge Separation and Enhanced Photocatalytic Hydrogen Evolution.

PubMed

Wang, Yang; Liu, Xueqin; Liu, Jia; Han, Bo; Hu, Xiaoqin; Yang, Fan; Xu, Zuwei; Li, Yinchang; Jia, Songru; Li, Zhen; Zhao, Yanli

2018-05-14

Graphite carbon nitride (g-C 3 N 4 ) is a promising candidate for photocatalytic hydrogen production, but only shows moderate activity owing to sluggish photocarrier transfer and insufficient light absorption. Herein, carbon quantum dots (CQDs) implanted in the surface plane of g-C 3 N 4 nanotubes were synthesized by thermal polymerization of freeze-dried urea and CQDs precursor. The CQD-implanted g-C 3 N 4 nanotubes (CCTs) could simultaneously facilitate photoelectron transport and suppress charge recombination through their specially coupled heterogeneous interface. The electronic structure and morphology were optimized in the CCTs, contributing to greater visible light absorption and a weakened barrier of the photocarrier transfer. As a result, the CCTs exhibited efficient photocatalytic performance under light irradiation with a high H 2 production rate of 3538.3 μmol g -1  h -1 and a notable quantum yield of 10.94 % at 420 nm. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Influence of Nano-Scale Silicon Nitride Additions on the Physical and Magnetic Properties of Iron Sheathed Magnesium Boride Wires

NASA Astrophysics Data System (ADS)

Zhu, W.; Cave, J.

2006-03-01

The enhancement of flux line pinning in magnesium boride wires is a critical issue for their future applications in devices and machines. It is well known that small size dopants can significantly influence the current densities of these materials. Here, the influence of nanometric (<30nm) silicon nitride on physical properties and current density is presented. The iron-sheathed powder in tube wires were prepared using pure magnesium and boron powders with silicon nitride additions. The wires were rolled flat and treated at up to 900 degrees C in flowing argon. SEM and XRD were used to identify phases and microstructures. Magnetization critical currents, up to several 100 of thousands A/cm2, at various temperatures and fields (5K - 20K and up to 3 tesla) show that there are competing mechanisms from chemical and flux pinning effects.

Fabrication of porous silicon nitride ceramics using binder jetting technology

NASA Astrophysics Data System (ADS)

Rabinskiy, L.; Ripetsky, A.; Sitnikov, S.; Solyaev, Y.; Kahramanov, R.

2016-07-01

This paper presents the results of the binder jetting technology application for the processing of the Si3N4-based ceramics. The difference of the developed technology from analogues used for additive manufacturing of silicon nitride ceramics is a method of the separate deposition of the mineral powder and binder without direct injection of suspensions/slurries. It is assumed that such approach allows reducing the technology complexity and simplifying the process of the feedstock preparation, including the simplification of the composite materials production. The binders based on methyl ester of acrylic acid with polyurethane and modified starch were studied. At this stage of the investigations, the technology of green body's fabrication is implemented using a standard HP cartridge mounted on the robotic arm. For the coordinated operation of the cartridge and robot the specially developed software was used. Obtained green bodies of silicon powder were used to produce the ceramic samples via reaction sintering. The results of study of ceramics samples microstructure and composition are presented. Sintered ceramics are characterized by fibrous α-Si3N4 structure and porosity up to 70%.

Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

PubMed Central

Meng, Xin; Byun, Young-Chul; Kim, Harrison S.; Lee, Joy S.; Lucero, Antonio T.; Cheng, Lanxia; Kim, Jiyoung

2016-01-01

With the continued miniaturization of devices in the semiconductor industry, atomic layer deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the inherent benefits of this process compared to other silicon nitride thin film deposition techniques. These benefits include not only high conformality and atomic-scale thickness control, but also low deposition temperatures. Over the past 20 years, recognition of the remarkable features of SiNx ALD, reinforced by experimental and theoretical investigations of the underlying surface reaction mechanism, has contributed to the development and widespread use of ALD SiNx thin films in both laboratory studies and industrial applications. Such recognition has spurred ever-increasing opportunities for the applications of the SiNx ALD technique in various arenas. Nevertheless, this technique still faces a number of challenges, which should be addressed through a collaborative effort between academia and industry. It is expected that the SiNx ALD will be further perceived as an indispensable technique for scaling next-generation ultra-large-scale integration (ULSI) technology. In this review, the authors examine the current research progress, challenges and future prospects of the SiNx ALD technique. PMID:28774125

Silicon Nitride Plates for Turbine Blade Application: FEA and NDE Assessment

NASA Technical Reports Server (NTRS)

Abdul-Aziz, Ali; Baaklini, George Y.; Bhatt, Ramakrishna T.

2001-01-01

Engine manufacturers are continually attempting to improve the performance and the overall efficiency of internal combustion engines. The thermal efficiency is typically improved by raising the operating temperature of essential engine components in the combustion area. This reduces the heat loss to a cooling system and allows a greater portion of the heat to be used for propulsion. Further improvements can be achieved by diverting part of the air from the compressor, which would have been used in the combustor for combustion purposes, into the turbine components. Such a process is called active cooling. Increasing the operating temperature, decreasing the cooling air, or both can improve the efficiency of the engine. Furthermore, lightweight, strong, tough hightemperature materials are required to complement efficiency improvement for nextgeneration gas turbine engines that can operate with minimum cooling. Because of their low-density, high-temperature strength, and thermal conductivity, ceramics are being investigated as potential materials for replacing ordinary metals that are currently used for engine hot section components. Ceramic structures can withstand higher operating temperatures and other harsh environmental factors. In addition, their low densities relative to metals helps condense component mass (ref. 1). The objectives of this program at the NASA Glenn Research Center are to develop manufacturing technology, a thermal barrier coating/environmental barrier coating (TBC/EBC), and an analytical modeling capability to predict thermomechanical stresses, and to do minimal burner rig tests of silicon nitride (Si3N4) and SiC/SiC turbine nozzle vanes under simulated engine conditions. Furthermore, and in support of the latter objectives, an optimization exercise using finite element analysis and nondestructive evaluation (NDE) was carried out to characterize and evaluate silicon nitride plates with cooling channels.

Boron nitride nanotube-mediated stimulation modulates F/G-actin ratio and mechanical properties of human dermal fibroblasts

NASA Astrophysics Data System (ADS)

Ricotti, Leonardo; das Neves, Ricardo Pires; Ciofani, Gianni; Canale, Claudio; Nitti, Simone; Mattoli, Virgilio; Mazzolai, Barbara; Ferreira, Lino; Menciassi, Arianna

2014-02-01

F/G-actin ratio modulation is known to have an important role in many cell functions and in the regulation of specific cell behaviors. Several attempts have been made in the latest decades to finely control actin production and polymerization, in order to promote certain cell responses. In this paper we demonstrate the possibility of modulating F/G-actin ratio and mechanical properties of normal human dermal fibroblasts by using boron nitride nanotubes dispersed in the culture medium and by stimulating them with ultrasound transducers. Increasing concentrations of nanotubes were tested with the cells, without any evidence of cytotoxicity up to 10 μg/ml concentration of nanoparticles. Cells treated with nanoparticles and ultrasound stimulation showed a significantly higher F/G-actin ratio in comparison with the controls, as well as a higher Young's modulus. Assessment of Cdc42 activity revealed that actin nucleation/polymerization pathways, involving Rho GTPases, are probably influenced by nanotube-mediated stimulation, but they do not play a primary role in the significant increase of F/G-actin ratio of treated cells, such effect being mainly due to actin overexpression.

Production and characterization of a novel carbon nanotube/titanium nitride nanocomposite

NASA Astrophysics Data System (ADS)

Baddour, Carole Emilie; Das, Kaushik; Vengallatore, Srikar; Meunier, Jean-Luc

2016-12-01

A novel titanium nitride (TiN)/carbon nanotube (CNT) nanocomposite is produced with the purpose to mechanically, structurally and chemically stabilize a ‘felt-like’ CNT growth structure. The CNTs are grown on stainless steel (SS) 304 by chemical vapor deposition using the direct growth method previously developed, which does not require the use of an additional catalyst precursor. The TiN coating is achieved by physical vapor deposition and is shown here to generate a nanocomposite with a porous three-dimensional architecture. The contact stiffness is evaluated using nanoindentation, and wetting properties of the TiN/CNT nanocomposites are determined from contact angle measurements. An increase in contact stiffness and effective elastic modulus with TiN coating time was observed. The TiN coating on the non-wetting CNT felt results in a wetting nanocomposite surface. The wetting property is found to be a function of the TiN coating thickness on the CNT structure.

Ultrafast structural dynamics of boron nitride nanotubes studied using transmitted electrons.

PubMed

Li, Zhongwen; Sun, Shuaishuai; Li, Zi-An; Zhang, Ming; Cao, Gaolong; Tian, Huanfang; Yang, Huaixin; Li, Jianqi

2017-09-14

We investigate the ultrafast structural dynamics of multi-walled boron nitride nanotubes (BNNTs) upon femtosecond optical excitation using ultrafast electron diffraction in a transmission electron microscope. Analysis of the time-resolved (100) and (002) diffraction profiles reveals highly anisotropic lattice dynamics of BNNTs, which can be attributed to the distinct nature of the chemical bonds in the tubular structure. Moreover, the changes in (002) diffraction positions and intensities suggest that the lattice response of BNNTs to the femtosecond laser excitation involves a fast and a slow lattice dynamic process. The fast process with a time constant of about 8 picoseconds can be understood to be a result of electron-phonon coupling, while the slow process with a time constant of about 100 to 300 picoseconds depending on pump laser fluence is tentatively associated with an Auger recombination effect. In addition, we discuss the power-law relationship of a three-photon absorption process in the BNNT nanoscale system.

Boron Nitride Nanotubes and Nanoplatelets as Reinforcing Agents of Polymeric Matrices for Bone Tissue Engineering

PubMed Central

Farshid, Behzad; Lalwani, Gaurav; Mohammadi, Meisam Shir; Simonsen, John; Sitharaman, Balaji

2016-01-01

This study investigates the mechanical properties and in vitro cytotoxicity of one- and two-dimensional boron nitride nanomaterials-reinforced biodegradable polymeric nanocomposites. Poly(propylene fumarate) (PPF) nanocomposites were fabricated using crosslinking agent N-vinyl pyrrolidone (NVP) and inorganic nanomaterials: boron nitride nanotubes (BNNTs) and boron nitride nanoplatelets (BNNPs) dispersed at 0.2 wt.% in the polymeric matrix. The incorporation of BNNPs and BNNTs resulted in a ~38% and ~15% increase in compressive (young's) modulus, and ~31% and ~6% increase in compressive yield strength compared to PPF control, respectively. The nanocomposites showed a time-dependent increased protein adsorption for only collagen-I protein. The cytotoxicity evaluation of aqueous BNNT and BNNP dispersions (at 1-100 μg/mL concentrations) using a representative murine MC3T3 preosteoblast cell line showed cytocompatibility of BNNTs and BNNPs (~73-99% viability). The cytotoxicity evaluation of media extracts of nanocomposites prior to crosslinking, after crosslinking and upon degradation (using 1X-100X dilutions) showed dose-dependent cytotoxicity responses. Crosslinked nanocomposites showed excellent (~79-100%) cell viability, cellular attachment (~57-67%), and spreading similar to cells grown on the surface of tissue culture polystyrene (TCPS) control. The media extracts of degradation products showed a dose-dependent cytotoxicity. The favorable cytocompatibility results in combination with improved mechanical properties of BNNT and BNNP nanocomposites opens new avenues for further in vitro and in vivo safety and efficacy studies for their bone tissue engineering applications. PMID:26526153

Steel bonded dense silicon nitride compositions and method for their fabrication

DOEpatents

Landingham, R.L.; Shell, T.E.

1985-05-20

A two-stage bonding technique for bonding high density silicon nitride and other ceramic materials to stainless steel and other hard metals, and multilayered ceramic-metal composites prepared by the technique are disclosed. The technique involves initially slurry coating a surface of the ceramic material at about 1500/sup 0/C in a vacuum with a refractory material and the stainless steel is then pressure bonded to the metallic coated surface by brazing it with nickel-copper-silver or nickel-copper-manganese alloys at a temperature in the range of about 850/sup 0/ to 950/sup 0/C in a vacuum. The two-stage bonding technique minimizes the temperature-expansion mismatch between the dissimilar materials.

Steel bonded dense silicon nitride compositions and method for their fabrication

DOEpatents

Landingham, Richard L.; Shell, Thomas E.

1987-01-01

A two-stage bonding technique for bonding high density silicon nitride and other ceramic materials to stainless steel and other hard metals, and multilayered ceramic-metal composites prepared by the technique are disclosed. The technique involves initially slurry coating a surface of the ceramic material at about 1500.degree. C. in a vacuum with a refractory material and the stainless steel is then pressure bonded to the metallic coated surface by brazing it with nickel-copper-silver or nickel-copper-manganese alloys at a temperature in the range of about 850.degree. to 950.degree. C. in a vacuum. The two-stage bonding technique minimizes the temperature-expansion mismatch between the dissimilar materials.

Graphitic carbon nitride (g-C3N4) coated titanium oxide nanotube arrays with enhanced photo-electrochemical performance.

PubMed

Sun, Mingxuan; Fang, Yalin; Kong, Yuanyuan; Sun, Shanfu; Yu, Zhishui; Umar, Ahmad

2016-08-09

Herein, we report the successful formation of graphitic carbon nitride coated titanium oxide nanotube array thin films (g-C3N4/TiO2) via the facile thermal treatment of anodized Ti sheets over melamine. The proportion of C3N4 and TiO2 in the composite can be adjusted by changing the initial addition mass of melamine. The as-prepared samples are characterized by several techniques in order to understand the morphological, structural, compositional and optical properties. UV-vis absorption studies exhibit a remarkable red shift for the g-C3N4/TiO2 thin films as compared to the pristine TiO2 nanotubes. Importantly, the prepared composites exhibit an enhanced photocurrent and photo-potential under both UV-vis and visible light irradiation. Moreover, the observed maximum photo-conversion efficiency of the prepared composites is 1.59 times higher than that of the pristine TiO2 nanotubes. The optical and electrochemical impedance spectra analysis reveals that the better photo-electrochemical performance of the g-C3N4/TiO2 nanotubes is mainly due to the wider light absorption and reduced impedance compared to the bare TiO2 nanotube electrode. The presented work demonstrates a facile and simple method to fabricate g-C3N4/TiO2 nanotubes and clearly revealed that the introduction of g-C3N4 is a new and innovative approach to improve the photocurrent and photo-potential efficiencies of TiO2.

Massive radius-dependent flow slippage in carbon nanotubes

NASA Astrophysics Data System (ADS)

Siria, Alessandro; Secchi, Eleonora; Marbach, Sophie; Niguès, Antoine; Stein, Derek; Bocquet, Lydéric

2016-11-01

Nanofluidics is the frontier where the continuum picture of fluid mechanics confronts the atomic nature of matter. Recent reports indicate that carbon nanotubes exhibit exceptional water transport properties due to nearly frictionless interfaces and this has stimulated interest in nanotube-based membranes for desalination, nano-filtration, and energy harvesting. However, the fundamental mechanisms of water transport inside nanotubes and at water-carbon interfaces remain controversial, as existing theories fail to provide a satisfying explanation for the limited experimental results. We report a study of water jets emerging from single nanotubes made of carbon and boron-nitride materials. Our experiments reveal extensive and radius-dependent surface slippage in carbon nanotubes (CNT). In stark contrast, boron-nitride nanotubes (BNNT), which are crystallographically similar to CNTs but electronically different, exhibit no slippage. This shows that slippage originates in subtle atomic-scale details of the solid-liquid interface. ERC StG - NanoSOFT.

Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Posseme, N., E-mail: nicolas.posseme@cea.fr; Pollet, O.; Barnola, S.

2014-08-04

Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ionsmore » implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6 A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.« less

Broadband transverse magnetic pass polarizer with low insertion loss based on silicon nitride waveguide

NASA Astrophysics Data System (ADS)

Sharma, Tarun Kumar; Ranganath, Praveen; Nambiar, Siddharth; Selvaraja, Shankar Kumar

2018-03-01

A horizontally asymmetric transverse magnetic (TM) pass polarizer is presented. The device passes only TM mode and rejects transverse electric (TE) mode. The proposed device has an asymmetricity in the horizontal direction comprising a direction coupler region with a silicon waveguide, silicon nitride waveguide, and an air gap, all residing on silica. Between three equal width Si waveguides, we have one region filled with air and the other with SiN with unequal optimized widths. The device with its optimal dimensions yields an extremely low insertion loss (IL) of 0.16 dB for TM→TM, while TE is rejected by an IL of >48 dB. The proposed polarizer is operated between C&L bands with a high extinction ratio and broadband width of about 110 nm.

Charging/discharging behavior and mechanism of silicon quantum dots embedded in amorphous silicon carbide films

NASA Astrophysics Data System (ADS)

Wen, Xixing; Zeng, Xiangbin; Zheng, Wenjun; Liao, Wugang; Feng, Feng

2015-01-01

The charging/discharging behavior of Si quantum dots (QDs) embedded in amorphous silicon carbide (a-SiCx) was investigated based on the Al/insulating layer/Si QDs embedded in a-SiCx/SiO2/p-Si (metal-insulator-quantum dots-oxide-silicon) multilayer structure by capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. Transmission electron microscopy and Raman scattering spectroscopy measurements reveal the microstructure and distribution of Si QDs. The occurrence and shift of conductance peaks indicate the carrier transfer and the charging/discharging behavior of Si QDs. The multilayer structure shows a large memory window of 5.2 eV at ±8 V sweeping voltage. Analysis of the C-V and G-V results allows a quantification of the Coulomb charging energy and the trapped charge density associated with the charging/discharging behavior. It is found that the memory window is related to the size effect, and Si QDs with large size or low Coulomb charging energy can trap two or more electrons by changing the charging voltage. Meanwhile, the estimated lower potential barrier height between Si QD and a-SiCx, and the lower Coulomb charging energy of Si QDs could enhance the charging and discharging effect of Si QDs and lead to an enlarged memory window. Further studies of the charging/discharging mechanism of Si QDs embedded in a-SiCx can promote the application of Si QDs in low-power consumption semiconductor memory devices.

Single walled boron nitride nanotube-based biosensor: an atomistic finite element modelling approach.

PubMed

Panchal, Mitesh B; Upadhyay, Sanjay H

2014-09-01

The unprecedented dynamic characteristics of nanoelectromechanical systems make them suitable for nanoscale mass sensing applications. Owing to superior biocompatibility, boron nitride nanotubes (BNNTs) are being increasingly used for such applications. In this study, the feasibility of single walled BNNT (SWBNNT)-based bio-sensor has been explored. Molecular structural mechanics-based finite element (FE) modelling approach has been used to analyse the dynamic behaviour of SWBNNT-based biosensors. The application of an SWBNNT-based mass sensing for zeptogram level of mass has been reported. Also, the effect of size of the nanotube in terms of length as well as different chiral atomic structures of SWBNNT has been analysed for their sensitivity analysis. The vibrational behaviour of SWBNNT has been analysed for higher-order modes of vibrations to identify the intermediate landing position of biological object of zeptogram scale. The present molecular structural mechanics-based FE modelling approach is found to be very effectual to incorporate different chiralities of the atomic structures. Also, different boundary conditions can be effectively simulated using the present approach to analyse the dynamic behaviour of the SWBNNT-based mass sensor. The presented study has explored the potential of SWBNNT, as a nanobiosensor having the capability of zeptogram level mass sensing.

Boron nitride nanotubes included thermally cross-linked gelatin-glucose scaffolds show improved properties.

PubMed

Şen, Özlem; Culha, Mustafa

2016-02-01

Boron nitride nanotubes (BNNTs) are increasingly investigated for their medical and biomedical applications due to their unique properties such as resistance to oxidation, thermal and electrical insulation, and biocompatibility. BNNTs can be used to enhance mechanical strength of biomedical structures such as scaffolds in tissue engineering applications. In this study, we report the use of BNNTs and hydroxylated BNNTs (BNNT-OH) to improve the properties of gelatin-glucose scaffolds prepared with electrospinning technique. Human dermal fibroblast (HDF) cells are used for the toxicity assessment and cell seeding studies. It is found that the addition of BNNTs into the scaffold does not influence cell viability, decreases the scaffold degradation rate, and improves cell attachment and proliferation compared to only-gelatin scaffold. Copyright © 2015 Elsevier B.V. All rights reserved.

Silicon nitride boundary lubrication: Effect of oxygenates

NASA Astrophysics Data System (ADS)

Gates, Richard S.; Hsu, Stephen M.

1995-07-01

A ball-on-three-flat (BTF) wear tester was used to investigate the boundary lubricating characteristics of oxygenates on a commercial silicon nitride. A wide variety of oxygen-containing compounds containing hydroxyl functioal groups were more effective compared to a base case of neat paraffin oil. Decreases of up to 58% in friction coefficient, and 95% in wear were obtained. In most cases, films were obseved in and around the wear scar, suggesting chemical reactions had taken place in the contact. Additional wear tests, conducted using neat shorter-chain linear primary alcohols, i.e., 6-10 carbons, demonstrated boundary lubrication protection, with longer chain length providing better antiwear performance. A study of several C8 compounds with specific oxygen-containing functional groups (primary alcohol, secondary alcohols, acid, aldehyde, and ketone) demonstrated that the primary alcohol had the strongest boundary lubricating effect. Varying the amount of water in the alcohols had little effect on friction and wear, suggesting that the boundary lubrication effects observed were not merely due to dissolved water in these fluids, but some characteristic chemical interaction with the hydroxyl functional group of the alcohols and acids.

Theoretical exploration of structural, electro-optical and magnetic properties of gallium-doped silicon carbide nanotubes

NASA Astrophysics Data System (ADS)

Behzad, Somayeh; Chegel, Raad; Moradian, Rostam; Shahrokhi, Masoud

2014-09-01

The effects of gallium doping on the structural, electro-optical and magnetic properties of (8,0) silicon carbide nanotube (SiCNT) are investigated by using spin-polarized density functional theory. It is found from the calculation of the formation energies that gallium substitution for silicon atom is preferred. Our results show that gallium substitution at either single carbon or silicon atom site in SiCNT could induce spontaneous magnetization. The optical studies based on dielectric function indicate that new transition peaks and a blue shift are observed after gallium doping.

Efficient boron-carbon-nitrogen nanotube formation via combined laser-gas flow levitation

DOEpatents

Whitney, R Roy; Jordan, Kevin; Smith, Michael W

2015-03-24

A process for producing boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z. The process utilizes a combination of laser light and nitrogen gas flow to support a boron ball target during heating of the boron ball target and production of a boron vapor plume which reacts with nitrogen or nitrogen and carbon to produce boron nitride nanotubes and/or boron-carbon-nitrogen nanotubes of the general formula B.sub.xC.sub.yN.sub.z.

A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

NASA Astrophysics Data System (ADS)

Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

2017-08-01

Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

First-principles investigation of band offsets and dielectric properties of Silicon-Silicon Nitride interfaces

NASA Astrophysics Data System (ADS)

Pham, Tuan Anh; Li, Tianshu; Gygi, Francois; Galli, Giulia

2011-03-01

Silicon Nitride (Si3N4) is a possible candidate material to replace or be alloyed with SiO2 to form high-K dielectric films on Si substrates, so as to help prevent leakage currents in modern CMOS transistors. Building on our previous work on dielectric properties of crystalline and amorphous Si3N4 slabs, we present an analysis of the band offsets and dielectric properties of crystalline-Si/amorphous Si3N4 interfaces based on first principles calculations. We discuss shortcomings of the conventional bulk-plus line up approach in band offset calculations for systems with an amorphous component, and we present the results of band offsets obtained from calculations of local density of states. Finally, we describe the role of bonding configurations in determining band edges and dielectric constants at the interface. We acknowledge financial support from Intel Corporation.

The effect of nanocrystalline silicon host on magnetic properties of encapsulated iron oxide nanoparticles.

PubMed

Granitzer, P; Rumpf, K; Gonzalez-Rodriguez, R; Coffer, J L; Reissner, M

2015-12-21

The purpose of this work is a detailed comparison of the fundamental magnetic properties of nanocomposite systems consisting of Fe3O4 nanoparticle-loaded porous silicon as well as silicon nanotubes. Such composite structures are of potential merit in the area of magnetically guided drug delivery. For magnetic systems to be utilized in biomedical applications, there are certain magnetic properties that must be fulfilled. Therefore magnetic properties of embedded Fe3O4-nanoparticles in these nanostructured silicon host matrices, porous silicon and silicon nanotubes, are investigated. Temperature-dependent magnetic investigations have been carried out for four types of iron oxide particle sizes (4, 5, 8 and 10 nm). The silicon host, in interplay with the iron oxide nanoparticle size, plays a sensitive role. It is shown that Fe3O4 loaded porous silicon and SiNTs differ significantly in their magnetic behavior, especially the transition between superparamagnetic behavior and blocked state, due to host morphology-dependent magnetic interactions. Importantly, it is found that all investigated samples meet the magnetic precondition of possible biomedical applications of exhibiting a negligible magnetic remanence at room temperature.

Assessments of Mechanical and Life Limiting Properties of Two Candidate Silicon Nitrides for Stirling Convertor Heater Head Applications

NASA Technical Reports Server (NTRS)

Choi, Sung R.; Krause, David L.

2006-01-01

NASA Glenn Research Center is developing advanced technology for Stirling convertors with a target of significantly improving the specific power and efficiency of the convertor and overall generator for Mars rovers and deep space missions. One specific approach to the target has been recognized as the use of appropriate high-temperature materials. As a series of ceramic material approaches in Advanced Stirling Convertor Development Program in fiscal year 2005, two commercial, structural silicon nitrides AS800 (Honeywell, Torrence, California) and SN282 (Kyocera, Vancouver, Washington) were selected and their mechanical and life limiting properties were characterized at 1050 C in air. AS800 exhibited both strength and Weibull modulus greater than SN282. A life limiting phenomenon was apparent in AS800 with a low slow crack growth parameter n = 15; whereas, a much increased resistance to slow crack growth was found in SN282 with n greater than 100. Difference in elastic modulus and thermal conductivity was negligible up to 1200 C between the two silicon nitrides. The same was true for the coefficient of thermal expansion up to 1400 C.

Molecular dynamics simulations of adsorption and diffusion of gases in silicon-carbide nanotubes.

PubMed

Malek, Kourosh; Sahimi, Muhammad

2010-01-07

Silicon carbide nanotubes (SiCNTs) are new materials with excellent properties, such as high thermal stability and mechanical strength, which are much improved over those of their carboneous counterparts, namely, carbon nanotubes (CNTs). Gas separation processes at high temperatures and pressures may be improved by developing mixed-matrix membranes that contain SiCNTs. Such nanotubes are also of interest in other important processes, such as hydrogen production and its storage, as well as separation by supercritical adsorption. The structural parameters of the nanotubes, i.e., their diameter, curvature, and chirality, as well as the interaction strength between the gases and the nanotubes' walls, play a fundamental role in efficient use of the SiCNTs in such processes. We employ molecular dynamics simulations in order to examine the adsorption and diffusion of N(2), H(2), CO(2), CH(4), and n-C(4)H(10) in the SiCNTs, as a function of the pressure and the type of the nanotubes, namely, the zigzag, armchair, and chiral tubes. The simulations indicate the strong effect of the nanotubes' chirality and curvature on the pressure dependence of the adsorption isotherms and the self-diffusivities. Detailed comparison is made between the results and those for the CNTs. In particular, we find that the adsorption capacity of the SiCNTs for hydrogen is higher than the CNTs' under the conditions that we have studied.

Molecular dynamics simulations of adsorption and diffusion of gases in silicon-carbide nanotubes

NASA Astrophysics Data System (ADS)

Malek, Kourosh; Sahimi, Muhammad

2010-01-01

Silicon carbide nanotubes (SiCNTs) are new materials with excellent properties, such as high thermal stability and mechanical strength, which are much improved over those of their carboneous counterparts, namely, carbon nanotubes (CNTs). Gas separation processes at high temperatures and pressures may be improved by developing mixed-matrix membranes that contain SiCNTs. Such nanotubes are also of interest in other important processes, such as hydrogen production and its storage, as well as separation by supercritical adsorption. The structural parameters of the nanotubes, i.e., their diameter, curvature, and chirality, as well as the interaction strength between the gases and the nanotubes' walls, play a fundamental role in efficient use of the SiCNTs in such processes. We employ molecular dynamics simulations in order to examine the adsorption and diffusion of N2, H2, CO2, CH4, and n-C4H10 in the SiCNTs, as a function of the pressure and the type of the nanotubes, namely, the zigzag, armchair, and chiral tubes. The simulations indicate the strong effect of the nanotubes' chirality and curvature on the pressure dependence of the adsorption isotherms and the self-diffusivities. Detailed comparison is made between the results and those for the CNTs. In particular, we find that the adsorption capacity of the SiCNTs for hydrogen is higher than the CNTs' under the conditions that we have studied.

Fabrication of silicon-embedded low resistance high-aspect ratio planar copper microcoils

NASA Astrophysics Data System (ADS)

Syed Mohammed, Zishan Ali; Puiu, Poenar Daniel; Aditya, Sheel

2018-01-01

Low resistance is an important requirement for microcoils which act as a signal receiver to ensure low thermal noise during signal detection. High-aspect ratio (HAR) planar microcoils entrenched in blind silicon trenches have features that make them more attractive than their traditional counterparts employing electroplating through a patterned thick polymer or achieved through silicon vias. However, challenges met in fabrication of such coils have not been discussed in detail until now. This paper reports the realization of such HAR microcoils embedded in Si blind trenches, fabricated with a single lithography step by first etching blind trenches in the silicon substrate with an aspect ratio of almost 3∶1 and then filling them up using copper electroplating. The electroplating was followed by chemical wet etching as a faster way of removing excess copper than traditional chemical mechanical polishing. Electrical resistance was further reduced by annealing the microcoils. The process steps and challenges faced in the realization of such structures are reported here followed by their electrical characterization. The obtained electrical resistances are then compared with those of other similar microcoils embedded in blind vias.

Template-Growth of Highly Ordered Carbon Nanotube Arrays on Silicon POSTPRINT

DTIC Science & Technology

2006-09-01

packed uni- form CNTs that are spatially isolated from each other is to use a growth template. Highly ordered anodic aluminum oxide ( AAO ) template can...process for evaporating thick aluminum of high quality and good adhesion. 15. SUBJECT TERMS Anodic Aluminum Oxide Template, Carbon Nanotubes (CNTs...within the highly ordered nanopores of an alumina oxide template, which is in turn formed on silicon through anodization of aluminum of unprecedented

An Array of Layers in Silicon Sulfides: Chain-like and Ground State Structures

NASA Astrophysics Data System (ADS)

Alonso-Lanza, Tomás; Ayuela, Andrés; Aguilera-Granja, Faustino

While much is known about isoelectronic materials related to carbon nanostructures, such as boron nitride layers and nanotubes, rather less is known about equivalent silicon based materials. Following the recent discovery of phosphorene, we here discuss isoelectronic silicon monosulfide monolayers. We describe a set of anisotropic ground state structures that clearly have a high stability with respect to the near isotropic silicon monosulfide monolayers. The source of the layer anisotropy is related to the presence of Si-S double chains linked by some Si-Si covalent bonds, which lie at the core of the increased stability, together with a remarkable spd hybridization on Si. The involvement of d orbitals brings more variety to silicon-sulfide based nanostructures that are isoelectronic to phosphorene, which could be relevant for future applications, adding extra degrees of freedom. Spanish Ministry of Economy and Competitiveness MINECO, Basque Government (ETORTEK Program 2014), University of the Basque Country (GrantGrant No. IT-366-07) and MPC Material Physics Center - San Sebastián.

Shock loading and release behavior of silicon nitride

NASA Astrophysics Data System (ADS)

Kawai, Nobuaki; Tsuru, Taiki; Hidaka, Naoto; Liu, Xun; Mashimo, Tsutomu

2015-06-01

Shock-reshock and shock-release experiments were performed on silicon nitride ceramics above and below its phase transition pressure. Experimental results clearly show the occurrence of elastic-plastic transition and phase transition during initial shock loading. The HEL and phase transition stress are determined as 11.6 GPa and 34.5 GPa, respectively. Below the phase transition point, the reshock profile consists of the single shock with short rise time, while the release profile shows the gradual release followed by more rapid one. Above the phase transition point, reshock and release behavior varies with the initial shock stress. In the case of reshock and release from about 40 GPa, the reshock structure is considerably dispersed, while the release structure shows rapid release. In the reshock profile from about 50 GPa, the formation of the shock wave with the small ramped precursor is observed. And, the release response from same condition shows initial gradual release and subsequent quite rapid one. These results would provide the information about how phase transformation kinetics effects on the reshock and release behavior.

Shock loading and release behavior of silicon nitride

NASA Astrophysics Data System (ADS)

Kawai, N.; Tsuru, T.; Hidaka, N.; Liu, X.; Mashimo, T.

2017-01-01

Shock-reshock and shock-release experiments were performed on silicon nitride ceramics above and below its phase transition pressure. Experimental results clearly show the occurrence of elastic-plastic transition and phase transition during initial shock loading. The HEL and phase transition stress are determined as 11.6 and 34.5 GPa, respectively. Below the phase transition stress, the reshock profile consists of the single shock with short rise time, while the release profile shows the gradual release followed by rapid one. Above phase transition stress, reshock and release behavior varies with the initial shock stress. In the case of reshock and release from about 40 GPa, the reshock structure is considerably dispersed, while the release structure shows rapid release. In the reshock profile from about 50 GPa, the formation of the shock wave with the small ramped precursor is observed. And, the release response from same shocked condition shows initial gradual release and subsequent quite rapid one. These results would provide the information about how phase transformation kinetics effects on the reshock and release behavior.

Silicon nitride directional coupler interferometer for surface sensing

NASA Astrophysics Data System (ADS)

Okubo, Kyohei; Uchiyamada, Ken; Asakawa, Kiyoshi; Suzuki, Hiroaki

2017-01-01

A silicon nitride directional coupler (DC) used to create a biosensing device is presented. The DC detects changes in the refractive index of the cladding (nclad) as changes in the relative output intensity. The DC length (L), nclad-dependent sensitivities of the DC, and preferred dimensions of the single-mode DC waveguides are obtained through numerical simulations. The performance of the DC is evaluated through end-fire coupling measurements. The intensities measured after varying the nclad using air, water, and glycerol solutions agree well with the fitting for a wide range of L values between 60 and 600 μm, i.e., corresponding to 6 to 60 times the coupling length. The bulk refractive index sensitivity was investigated using glycerol solutions of different concentrations and was found to be 18.9 optical intensity units per refractive index unit (OIU/RIU). Biotin/streptavidin bindings were detected with a sensitivity of 60 OIU/RIU and a detection limit of 0.13 μM, suggesting the feasibility of the DC for immunosensing.

Silicon Nitride Creep Under Various Specimen-Loading Configurations

NASA Technical Reports Server (NTRS)

Choi, Sung R.; Holland, Frederic A.

2000-01-01

Extensive creep testing of a hot-pressed silicon nitride (NC 132) was performed at 1300 C in air using five different specimen-loading configurations: (1) pure tension, (2) pure compression, (3) four-point uniaxial flexure, (4) ball-on-ring biaxial flexure, and (5) ring-on-ring biaxial flexure. This paper reports experimental results as well as test techniques developed in this work. Nominal creep strain and its rate for a given nominal applied stress were greatest in tension, least in compression, and intermediate in uniaxial and biaxial flexure. Except for the case of compression loading, nominal creep strain generally decreased with time, resulting in a less-defined steady-state condition. Of the four creep formulations-power-law, hyperbolic sine, step, and redistribution--the conventional power-law formulation still provides the most convenient and reasonable estimation of the creep parameters of the NC 132 material. The data base to be obtained will be used to validate the NASA Glenn-developed design code CARES/Creep (ceramics analysis and reliability evaluation of structures and creep).

A quantitative comparison of resolution, scanning speed and lifetime behavior of CVD grown Single Wall Carbon Nanotubes and silicon SPM probes using spectral methods

NASA Astrophysics Data System (ADS)

Krause, O.; Bouchiat, V.; Bonnot, A. M.

2007-03-01

Due to their extreme aspect ratios and exceptional mechanical properties Carbon Nanotubes terminated silicon probes have proven to be the ''ideal'' probe for Atomic Force Microscopy. But especially for the manufacturing and use of Single Walled Carbon Nanotubes there are serious problems, which have not been solved until today. Here, Single and Double Wall Carbon Nanotubes, batch processed and used as deposited by Chemical Vapor Deposition without any postprocessing, are compared to standard and high resolution silicon probes concerning resolution, scanning speed and lifetime behavior.

Three-dimensional finite element analyses of four designs of a high-strength silicon nitride implant.

PubMed

Lin, S; Shi, S; LeGeros, R Z; LeGeros, J P

2000-01-01

The effects of implant shape and size on the stress distribution around high-strength silicon nitride implants under vertical and oblique forces were determined using a three-dimensional finite element analysis. Finite element models were designed using as a basis the serial sections of the mandible. Using Auto-CAD software, the model simulated the placement of implants in the molar region of the left mandible. Results of the analyses demonstrated that mainly the implant root shape and the directions of bite forces influence the stress distributions in the supporting bone around each implant. Implant size is a lesser factor. The serrated implants presented a larger surface area to the bone than either the cylindrical or tapered implants, which resulted in lower compressive stress around the serrated implants. With increasing implant diameter and length, compressive stress decreased. The mean compressive stress distribution on the serrated implants was more flat (platykurtic) than on either the cylindrical or tapered implants. Results of studies on two load directions (vertical and oblique) showed that, in either case, the compressive stress in the cortical bone around the neck of the implant was higher than in the cancellous bone along the length of the implant. The most extreme principal compressive stress was found with oblique force. This study provides the first information on the relationship between shape of the silicon nitride implant and stress on the supporting bone.

Parallel fabrication of sub-50-nm uniformly sized nanoparticles by deposition through a patterned silicon nitride nanostencil.

PubMed

Yan, X-M; Contreras, A M; Koebel, M M; Liddle, J A; Somorjai, G A

2005-06-01

Using low-pressure chemical vapor deposition of silicon dioxide, we have reduced the size of 56-nm features in a silicon nitride membrane, called a stencil, down to 36 nm. Sub-50-nm uniformly sized nanoparticles are fabricated by electron-beam deposition of Pt through the stencil mask. A self-assembled monolayer (SAM) of tridecafluoro-1,1,2,2-tetrahydrooctyl-1-trichlorosilane was used to reduce Pt clogging of the nanosize holes during deposition as well as to protect the stencil during the postdeposition Pt removal. X-ray photoelectron spectroscopy shows that the SAM protects the stencil efficiently during this postdeposition removal of Pt.