Science.gov

Sample records for nanotunneling junction-based hyperspectal

  1. Nanotunneling Junction-based Hyperspectal Polarimetric Photodetector and Detection Method

    NASA Technical Reports Server (NTRS)

    Son, Kyung-ah (Inventor); Moon, Jeongsun J. (Inventor); Chattopadhyay, Goutam (Inventor); Liao, Anna (Inventor); Ting, David (Inventor)

    2009-01-01

    A photodetector, detector array, and method of operation thereof in which nanojunctions are formed by crossing layers of nanowires. The crossing nanowires are separated by a few nm thick electrical barrier layer which allows tunneling. Each nanojunction is coupled to a slot antenna for efficient and frequency-selective coupling to photo signals. The nanojunctions formed at the intersection of the crossing wires defines a vertical tunneling diode that rectifies the AC signal from a coupled antenna and generates a DC signal suitable for reforming a video image. The nanojunction sensor allows multi/hyper spectral imaging of radiation within a spectral band ranging from terahertz to visible light, and including infrared (IR) radiation. This new detection approach also offers unprecedented speed, sensitivity and fidelity at room temperature.

  2. Hydrogen-induced nanotunnel opening within semiconductor subsurface

    PubMed Central

    Soukiassian, Patrick; Wimmer, Erich; Celasco, Edvige; Giallombardo, Claudia; Bonanni, Simon; Vattuone, Luca; Savio, Letizia; Tejeda, Antonio; Silly, Mathieu; D’angelo, Marie; Sirotti, Fausto; Rocca, Mario

    2013-01-01

    One of the key steps in nanotechnology is our ability to engineer and fabricate low-dimensional nano-objects, such as quantum dots, nanowires, two-dimensional atomic layers or three-dimensional nano-porous systems. Here we report evidence of nanotunnel opening within the subsurface region of a wide band-gap semiconductor, silicon carbide. Such an effect is induced by selective hydrogen/deuterium interaction at the surface, which possesses intrinsic compressive stress. This finding is established with a combination of ab-initio computations, vibrational spectroscopy and synchrotron-radiation-based photoemission. Hydrogen/deuterium-induced puckering of the subsurface Si atoms marks the critical step in this nanotunnel opening. Depending on hydrogen/deuterium coverages, the nanotunnels are either metallic or semiconducting. Dangling bonds generated inside the nanotunnel offer a promising template to capture atoms or molecules. These features open nano-tailoring capabilities towards advanced applications in electronics, chemistry, storage, sensors or biotechnology. Understanding and controlling such a mechanism open routes towards surface/interface functionalization.

  3. Formation of nanotunnels inside a resist film in laser interference lithography.

    PubMed

    Wei, Qi; Hu, Fanhua; Wang, Liyuan

    2015-05-19

    A few kinds of 2-diazo-1-naphthoquinone-4-sulfonates of poly(4-hydroxylstyrene) were prepared to form one-component i-line photoresists. In the laser interference lithography experiments of some of the photoresists, nanotunnels were observed to be aligned in the interior of the resist film. The shape and size of the nanotunnels remain virtually unchanged even under an increased exposure dose, indicating that the exposure energy is confined within the tunnel space. The formation of the nanotunnels results from the effect of standing waves and the permeation of developer from the surface deep into the resist films. PMID:25938301

  4. An angled nano-tunnel fabricated on poly(methyl methacrylate) by a focused ion beam

    NASA Astrophysics Data System (ADS)

    Her, Eun Kyu; Chung, Hee-Suk; Moon, Myoung-Woon; Oh, Kyu Hwan

    2009-07-01

    Angled nano-scale tunnels with high aspect ratio were fabricated on poly(methyl methacrylate) (PMMA) using a focused ion beam (FIB). The fabrication parameters such as ion fluence, incidence angle, and acceleration voltage of the Ga+ ion beam were first studied on the PMMA surface to explore the formation of the nano-scale configurations such as nano-holes and cones with diameter in the range of 50-150 nm at an ion beam acceleration voltage of 5-20 kV. It was also found that the PMMA surface exposed to FIB was changed into an amorphous graphitic structure. Angled nano-scale tunnels were fabricated with high aspect ratio of 700-1500 nm in depth and 60 nm in mean diameter at an ion beam acceleration voltage of 5 kV and under a specific ion beam current. The angle of the nano-tunnels was found to follow the incident angle of the ion beam tilted from 0° to 85°, which has the potential for creating a mold for anisotropic adhesives by mimicking the hairs on a gecko's feet.

  5. Junction-based field emission structure for field emission display

    DOEpatents

    Dinh, Long N.; Balooch, Mehdi; McLean, II, William; Schildbach, Marcus A.

    2002-01-01

    A junction-based field emission display, wherein the junctions are formed by depositing a semiconducting or dielectric, low work function, negative electron affinity (NEA) silicon-based compound film (SBCF) onto a metal or n-type semiconductor substrate. The SBCF can be doped to become a p-type semiconductor. A small forward bias voltage is applied across the junction so that electron transport is from the substrate into the SBCF region. Upon entering into this NEA region, many electrons are released into the vacuum level above the SBCF surface and accelerated toward a positively biased phosphor screen anode, hence lighting up the phosphor screen for display. To turn off, simply switch off the applied potential across the SBCF/substrate. May be used for field emission flat panel displays.

  6. Effect of sound on gap-junction-based intercellular signaling: Calcium waves under acoustic irradiation

    NASA Astrophysics Data System (ADS)

    Deymier, P. A.; Swinteck, N.; Runge, K.; Deymier-Black, A.; Hoying, J. B.

    2015-11-01

    We present a previously unrecognized effect of sound waves on gap-junction-based intercellular signaling such as in biological tissues composed of endothelial cells. We suggest that sound irradiation may, through temporal and spatial modulation of cell-to-cell conductance, create intercellular calcium waves with unidirectional signal propagation associated with nonconventional topologies. Nonreciprocity in calcium wave propagation induced by sound wave irradiation is demonstrated in the case of a linear and a nonlinear reaction-diffusion model. This demonstration should be applicable to other types of gap-junction-based intercellular signals, and it is thought that it should be of help in interpreting a broad range of biological phenomena associated with the beneficial therapeutic effects of sound irradiation and possibly the harmful effects of sound waves on health.

  7. Effect of sound on gap-junction-based intercellular signaling: Calcium waves under acoustic irradiation.

    PubMed

    Deymier, P A; Swinteck, N; Runge, K; Deymier-Black, A; Hoying, J B

    2015-01-01

    We present a previously unrecognized effect of sound waves on gap-junction-based intercellular signaling such as in biological tissues composed of endothelial cells. We suggest that sound irradiation may, through temporal and spatial modulation of cell-to-cell conductance, create intercellular calcium waves with unidirectional signal propagation associated with nonconventional topologies. Nonreciprocity in calcium wave propagation induced by sound wave irradiation is demonstrated in the case of a linear and a nonlinear reaction-diffusion model. This demonstration should be applicable to other types of gap-junction-based intercellular signals, and it is thought that it should be of help in interpreting a broad range of biological phenomena associated with the beneficial therapeutic effects of sound irradiation and possibly the harmful effects of sound waves on health.

  8. Paramagnetic molecule induced strong antiferromagnetic exchange coupling on a magnetic tunnel junction based molecular spintronics device.

    PubMed

    Tyagi, Pawan; Baker, Collin; D'Angelo, Christopher

    2015-07-31

    This paper reports our Monte Carlo (MC) studies aiming to explain the experimentally observed paramagnetic molecule induced antiferromagnetic coupling between ferromagnetic (FM) electrodes. Recently developed magnetic tunnel junction based molecular spintronics devices (MTJMSDs) were prepared by chemically bonding the paramagnetic molecules between the FM electrodes along the tunnel junction's perimeter. These MTJMSDs exhibited molecule-induced strong antiferromagnetic coupling. We simulated the 3D atomic model analogous to the MTJMSD and studied the effect of molecule's magnetic couplings with the two FM electrodes. Simulations show that when a molecule established ferromagnetic coupling with one electrode and antiferromagnetic coupling with the other electrode, then theoretical results effectively explained the experimental findings. Our studies suggest that in order to align MTJMSDs' electrodes antiparallel to each other, the exchange coupling strength between a molecule and FM electrodes should be ∼50% of the interatomic exchange coupling for the FM electrodes.

  9. Mode-hopping mechanism generating colored noise in a magnetic tunnel junction based spin torque oscillator

    SciTech Connect

    Sharma, Raghav; Dürrenfeld, P.; Iacocca, E.; Heinonen, O. G.; Åkerman, J.; Muduli, P. K.

    2014-09-29

    The frequency noise spectrum of a magnetic tunnel junction based spin torque oscillator is examined where multiple modes and mode-hopping events are observed. The frequency noise spectrum is found to consist of both white noise and 1/f frequency noise. We find a systematic and similar dependence of both white noise and 1/f frequency noise on bias current and the relative angle between the reference and free layers, which changes the effective damping and hence the mode-hopping behavior in this system. The frequency at which the 1/f frequency noise changes to white noise increases as the free layer is aligned away from the anti-parallel orientation w.r.t the reference layer. These results indicate that the origin of 1/f frequency noise is related to mode-hopping, which produces both white noise as well as 1/f frequency noise similar to the case of ring lasers.

  10. CMOS Interface Circuits for Spin Tunneling Junction Based Magnetic Random Access Memories

    SciTech Connect

    Ganesh Saripalli

    2002-12-31

    Magneto resistive memories (MRAM) are non-volatile memories which use magnetic instead of electrical structures to store data. These memories, apart from being non-volatile, offer a possibility to achieve densities better than DRAMs and speeds faster than SRAMs. MRAMs could potentially replace all computer memory RAM technologies in use today, leading to future applications like instan-on computers and longer battery life for pervasive devices. Such rapid development was made possible due to the recent discovery of large magnetoresistance in Spin tunneling junction devices. Spin tunneling junctions (STJ) are composite structures consisting of a thin insulating layer sandwiched between two magnetic layers. This thesis research is targeted towards these spin tunneling junction based Magnetic memories. In any memory, some kind of an interface circuit is needed to read the logic states. In this thesis, four such circuits are proposed and designed for Magnetic memories (MRAM). These circuits interface to the Spin tunneling junctions and act as sense amplifiers to read their magnetic states. The physical structure and functional characteristics of these circuits are discussed in this thesis. Mismatch effects on the circuits and proper design techniques are also presented. To demonstrate the functionality of these interface structures, test circuits were designed and fabricated in TSMC 0.35{micro} CMOS process. Also circuits to characterize the process mismatches were fabricated and tested. These results were then used in Matlab programs to aid in design process and to predict interface circuit's yields.

  11. Programmable Schottky Junctions Based on Ferroelectric Gated MoS2 Transistors

    NASA Astrophysics Data System (ADS)

    Xiao, Zhiyong; Song, Jingfeng; Drcharme, Stephen; Hong, Xia

    We report a programmable Schottky junction based on MoS2 field effect transistors with a SiO2 back gate and a ferroelectric copolymer poly(vinylidene-fluoride-trifluorethylene) (PVDF) top gate. We fabricated mechanically exfoliated single layer MoS2 flakes into two point devices via e-beam lithography, and deposited on the top of the devices ~20 nm PVDF thin films. The polarization of the PVDF layer is controlled locally by conducting atomic force microscopy. The devices exhibit linear ID-VD characteristics when the ferroelectric gate is uniformly polarized in one direction. We then polarized the gate into two domains with opposite polarization directions, and observed that the ID-VD characteristics of the MoS2 channel can be modulated between linear and rectified behaviors depending on the back gate voltage. The nonlinear ID-VD relation emerges when half of the channel is in the semiconductor phase while the other half is in the metallic phase, and it can be well described by the thermionic emission model with a Schottky barrier of ~0.5 eV. The Schottky junction can be erased by re-write the entire channel in the uniform polarization state. Our study facilitates the development of programmable, multifunctional nanoelectronics based on layered 2D TMDs..

  12. High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

    SciTech Connect

    Wu, Y.; Li, X.; Xu, P.; Wang, Y.; Shen, X.; Liu, X.; Yang, Q.; Hasan, T.

    2015-02-02

    We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 μA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 μA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecture offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.

  13. Measurement of the quantum conductance of germanium by an electrochemical scanning tunneling microscope break junction based on a jump-to-contact mechanism.

    PubMed

    Xie, Xufen; Yan, Jiawei; Liang, Jinghong; Li, Jijun; Zhang, Meng; Mao, Bingwei

    2013-10-01

    We present quantum conductance measurements of germanium by means of an electrochemical scanning tunneling microscope (STM) break junction based on a jump-to-contact mechanism. Germanium nanowires between a platinum/iridium tip and different substrates were constructed to measure the quantum conductance. By applying appropriate potentials to the substrate and the tip, the process of heterogeneous contact and homogeneous breakage was realized. Typical conductance traces exhibit steps at 0.025 and 0.05 G0. The conductance histogram indicates that the conductance of germanium nanowires is located between 0.02 and 0.15 G0 in the low-conductance region and is free from the influence of substrate materials. However, the distribution of conductance plateaus is too discrete to display distinct peaks in the conductance histogram of the high-conductance region. PMID:23704043

  14. Sub-cycle optical phase control of nanotunnelling in the single-electron regime

    NASA Astrophysics Data System (ADS)

    Rybka, Tobias; Ludwig, Markus; Schmalz, Michael F.; Knittel, Vanessa; Brida, Daniele; Leitenstorfer, Alfred

    2016-10-01

    The high peak electric fields provided by single-cycle light pulses can be harnessed to manipulate and control charge motion in solid-state systems, resulting in electron emission out of metals and semiconductors or high harmonics generation in dielectrics. These processes are of a non-perturbative character and require precise reproducibility of the electric-field profile. Here, we vary the carrier-envelope phase of 6-fs-long near-infrared pulses with pJ-level energy to control electronic transport in a laterally confined nanoantenna with an 8 nm gap. Peak current densities of 50 MA cm-2 are achieved, corresponding to the transfer of individual electrons in a half-cycle period of 2 fs. The observed behaviours are made possible by the strong distortion of the effective tunnelling barrier due to the extreme electric fields that the nanostructure provides and sustains under sub-cycle optical biasing. Operating at room temperature and in a standard atmosphere, the performed experiments demonstrate a robust class of nanoelectronic switches gated by phase-locked optical transients of minute energy content.

  15. Magnetic tunnel junction based spintronic logic devices

    NASA Astrophysics Data System (ADS)

    Lyle, Andrew Paul

    The International Technology Roadmap for Semiconductors (ITRS) predicts that complimentary metal oxide semiconductor (CMOS) based technologies will hit their last generation on or near the 16 nm node, which we expect to reach by the year 2025. Thus future advances in computational power will not be realized from ever-shrinking device sizes, but rather by 'outside the box' designs and new physics, including molecular or DNA based computation, organics, magnonics, or spintronic. This dissertation investigates magnetic logic devices for post-CMOS computation. Three different architectures were studied, each relying on a different magnetic mechanism to compute logic functions. Each design has it benefits and challenges that must be overcome. This dissertation focuses on pushing each design from the drawing board to a realistic logic technology. The first logic architecture is based on electrically connected magnetic tunnel junctions (MTJs) that allow direct communication between elements without intermediate sensing amplifiers. Two and three input logic gates, which consist of two and three MTJs connected in parallel, respectively were fabricated and are compared. The direct communication is realized by electrically connecting the output in series with the input and applying voltage across the series connections. The logic gates rely on the fact that a change in resistance at the input modulates the voltage that is needed to supply the critical current for spin transfer torque switching the output. The change in resistance at the input resulted in a voltage margin of 50--200 mV and 250--300 mV for the closest input states for the three and two input designs, respectively. The two input logic gate realizes the AND, NAND, NOR, and OR logic functions. The three input logic function realizes the Majority, AND, NAND, NOR, and OR logic operations. The second logic architecture utilizes magnetostatically coupled nanomagnets to compute logic functions, which is the basis of Magnetic Quantum Cellular Automata (MQCA). MQCA has the potential to be thousands of times more energy efficient than CMOS technology. While interesting, these systems are academic unless they can be interfaced into current technologies. This dissertation pushed past a major hurdle by experimentally demonstrating a spintronic input/output (I/O) interface for the magnetostatically coupled nanomagnets by incorporating MTJs. This spintronic interface allows individual nanomagnets to be programmed using spin transfer torque and read using magneto resistance structure. Additionally the spintronic interface allows statistical data on the reliability of the magnetic coupling utilized for data propagation to be easily measured. The integration of spintronics and MQCA for an electrical interface to achieve a magnetic logic device with low power creates a competitive post-CMOS logic device. The final logic architecture that was studied used MTJs to compute logic functions and magnetic domain walls to communicate between gates. Simulations were used to optimize the design of this architecture. Spin transfer torque was used to compute logic function at each MTJ gate and was used to drive the domain walls. The design demonstrated that multiple nanochannels could be connected to each MTJ to realize fan-out from the logic gates. As a result this logic scheme eliminates the need for intermediate reads and conversions to pass information from one logic gate to another.

  16. Tunnel junction based memristors as artificial synapses

    PubMed Central

    Thomas, Andy; Niehörster, Stefan; Fabretti, Savio; Shepheard, Norman; Kuschel, Olga; Küpper, Karsten; Wollschläger, Joachim; Krzysteczko, Patryk; Chicca, Elisabetta

    2015-01-01

    We prepared magnesia, tantalum oxide, and barium titanate based tunnel junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance change from 10% up to 100%. Utilizing the memristive properties, we looked into the use of the junction structures as artificial synapses. We observed analogs of long-term potentiation, long-term depression and spike-time dependent plasticity in these simple two terminal devices. Finally, we suggest a possible pathway of these devices toward their integration in neuromorphic systems for storing analog synaptic weights and supporting the implementation of biologically plausible learning mechanisms. PMID:26217173

  17. Electronic Transport in Molecular Junction Based on C20 Cages

    NASA Astrophysics Data System (ADS)

    Ouyang, Fang-Ping; Xu, Hui

    2007-04-01

    Choosing closed-ended armchair (5, 5) single-wall carbon nanotubes (CCNTs) as electrodes, we investigate the electron transport properties across an all-carbon molecular junction consisting of C20 molecules suspended between two semi-infinite carbon nanotubes. It is shown that the conductances are quite sensitive to the number of C20 molecules between electrodes for both configuration CF1 and double-bonded models: the conductances of C20 dimers are markedly smaller than those of monomers. The physics is that incident electrons easily pass the C20 molecules and are predominantly scattered at the C20-C20 junctions. Moreover, we study the doping effect of such molecular junction by doping nitrogen atoms substitutionally. The bonding property of the molecular junction with configuration CF1 has been analysed by calculating the Mulliken atomic charges. Our results have revealed that the C atoms in N-doped junctions are more ionic than those in pure-carbon ones, leading to the fact that N-doped junctions have relatively large conductance.

  18. Ferromagnetic cross junction based spin wave logic device

    NASA Astrophysics Data System (ADS)

    Kozhanov, Alexander

    2014-03-01

    Spin wave based signal processing/logic devices have long history of development and exploration. Typically the spin wave phase is used to encode the input information. Spin wave interference is used to produce the device output in form of the spin wave amplitude. Electronic amplitude-to-phase signal converter is required to build a logic gate capable of providing necessary fan-out. In case of destructive interference the phase information is lost and a ``new'' wave should be excited at the next logic stage. In this work we demonstrate the spin wave interference in ferromagnetic CoTaZr cross and propose a spin wave logic device based on this structure. Two neighboring arms of the cross serve as the device inputs. For the certain input wave phase offsets the interference is constructive in one output arm of the cross while destructive in another and vice versa thus resulting in a phase controlled spin wave switching. The output waves in the cross arms have different phase offsets dependent on the input wave phase offset. By merging the spin waves scattered into the cross output arms the device output is formed with a wave phase following the OR/NOR logic operation. We model local spin wave scattering in the cross center and discuss the effect of the local spin wave modes in the cross junction on the proposed device operation. Supported by Georgia State University.

  19. A dispersion-engineered Josephson junction-based travelling wave parametric amplifier with low loss dielectric

    NASA Astrophysics Data System (ADS)

    Mutus, J.; White, T.; Hoi, I.-C.; Barends, R.; Campbell, B.; Chen, Y.; Chen, Z.; Chiaro, B.; Fowler, A.; Dunsworth, A.; Jeffrey, E.; Kelly, J.; Megrant, A.; Neill, C.; O'Malley, P. J. J.; Roushan, P.; Quintana, C.; Sank, D.; Vainsencher, A.; Wenner, J.; Gao, J.; Chaudhuri, S.; Cleland, A. N.; Martinis, J. M.

    2015-03-01

    Travelling wave parametric amplifiers (TWPAs) promise wide-band performance with high saturation power for amplifying microwave frequency signals. Designing a TWPA requires a careful balance of many parameters in order to approach quantum-limited noise performance with sufficient gain and saturation power. We present a design based on an LC-ladder transmission line of Josephson junctions and parallel plate capacitors using low-loss amorphous silicon dielectric. Crucially, we have inserted λ / 4 resonators at regular intervals along the transmission line in order maintain the phase matching condition between pump, signal and idler in order to increase gain. The design and performance of the device will be presented, demonstrating high-gain, wide bandwidth and high dynamic range.

  20. Normal metal tunnel junction-based superconducting quantum interference proximity transistor

    SciTech Connect

    D'Ambrosio, Sophie Meissner, Martin; Blanc, Christophe; Ronzani, Alberto; Giazotto, Francesco

    2015-09-14

    We report the fabrication and characterization of an alternative design for a superconducting quantum interference proximity transistor (SQUIPT) based on a normal metal (N) probe. The absence of direct Josephson coupling between the proximized metal nanowire and the N probe allows us to observe the full modulation of the wire density of states around zero voltage and current via the application of an external magnetic field. This results into a drastic suppression of power dissipation which can be as low as a few ∼10{sup −17} W. In this context, the interferometer allows an improvement of up to four orders of magnitude with respect to earlier SQUIPT designs and makes it ideal for extra-low power cryogenic applications. In addition, the N-SQUIPT has been recently predicted to be the enabling candidate for the implementation of coherent caloritronic devices based on proximity effect.

  1. A Single-Material Logical Junction Based on 2D Crystal PdS2.

    PubMed

    Ghorbani-Asl, Mahdi; Kuc, Agnieszka; Miró, Pere; Heine, Thomas

    2016-02-01

    A single-material logical junction with negligible contact resistance is designed by exploiting quantum-confinement effects in 1T PdS2 . The metallic bilayer serves as electrodes for the semiconducting channel monolayer, avoiding contact resistance. Heat dissipation is then governed by tunnel loss, which becomes negligible at channel lengths larger than 2.45 nm. This value marks the integration limit for a conventional 2D transistor.

  2. Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices

    NASA Astrophysics Data System (ADS)

    Liu, H.; Bedau, D.; Backes, D.; Katine, J. A.; Langer, J.; Kent, A. D.

    2010-12-01

    Orthogonal spin-transfer magnetic random access memory (OST-MRAM) uses a spin-polarizing layer magnetized perpendicularly to a free layer to achieve large spin-transfer torques and ultrafast energy efficient switching. We have fabricated and studied OST-MRAM devices that incorporate a perpendicularly magnetized spin-polarizing layer and a magnetic tunnel junction, which consists of an in-plane magnetized free layer and synthetic antiferromagnetic reference layer. Reliable switching is observed at room temperature with 0.7 V amplitude pulses of 500 ps duration. The switching is bipolar, occurring for positive and negative polarity pulses, consistent with a precessional reversal mechanism, and requires an energy of less than 450 fJ.

  3. Statistical and Time Resolved Studies of Switching in Magnetic Tunnel Junction based Orthogonal Spin Transfer Devices

    NASA Astrophysics Data System (ADS)

    Liu, Huanlong; Bedau, Daniel; Backes, Dirk; Langer, Jurgen; Manandhar, Pradeep; Kent, Andrew

    2012-02-01

    We report statistical and single-shot time-resolved studies of spin transfer switching in OST-MRAM devices. These devices consist of a perpendicular polarizer integrated into a layer stack with an in-plane magnetized free and reference layer, which form the electrodes of a magnetic tunnel junction [1]. The perpendicular polarizer provides an initial torque -- designed to reduce the incubation delay in switching. The demagnetization field created during the switching can further accelerate the reversal process [2]. The devices switch reliably at 0.7 V and 500 ps duration for both voltage polarities. We record the change of the device resistance in real time during the pulse to obtain the time needed to initiate the switching τstart and the time between the initiation and the end of the switching τswitch for every single switching event. τswitch is determined to be less than a few hundreds of picoseconds, on the order of the precession time due to the demagnetization field and we find evidence for precession reversal under certain conditions. We further present results on the effects of pulse amplitude and applied field on τstart and τswitch. This work was supported by Spin Transfer Technologies. [1] H. Liu et al., APL 97, 242510 (2010). [2] A. D. Kent et al., APL 84, 3897 (2004).

  4. Ultrafast Switching in Magnetic Tunnel Junction based Orthogonal Spin Transfer Devices

    NASA Astrophysics Data System (ADS)

    Liu, Huanlong; Bedau, Daniel; Backes, Dirk; Katine, Jordan; Langer, Jürgen; Kent, Andrew; New York University, New York, NY 10003 USA Team; Hitachi-GST, San Jose, California 95135 USA Team; Singulus, 63796 Kahl am Main, Germany Team

    2011-03-01

    Orthogonal spin-transfer magnetic random access memory (OST-MRAM) uses a spin-polarizing layer magnetized perpendicularly to the free layer to achieve large spin-transfer torques and ultrafast energy efficient switching. We have fabricated and studied OST-MRAM devices that incorporate a perpendicularly magnetized polarizer and a magnetic tunnel junction, which consists of an in-plane magnetized free layer and synthetic antiferromagnetic reference layer. A switching probability of 100% is observed for 500 ps pulses, requiring an energy of 250 fJ. The fast switching process indicates there is no incubation delay of several nanoseconds as observed in conventional collinear magnetized devices. Due to the perpendicular polarizer switching is possible for both pulse polarities. There is also evidence for precessional switching in the non-monotonic dependence of the switching probability versus pulse amplitude. This work was supported by Spin Transfer Technologies.

  5. Phonon-assisted Andreev reflection in a hybrid junction based on a quantum dot

    NASA Astrophysics Data System (ADS)

    Bocian, Kacper; Rudziński, Wojciech

    2015-02-01

    Spin-dependent tunneling through a quantum dot coupled to one ferromagnetic and one superconducting electrodes is investigated in the Andreev reflection (AR) regime occurring in the presence of the on-dot electron-phonon interactions. Current-voltage characteristics of the system are evaluated within the nonequilibrium Green function technique. Features of the AR current due to interplay between the electron-phonon interactions, intradot Coulomb correlations and the polarization of the ferromagnetic electrode are analyzed in both linear and nonlinear transport regimes. It is shown that for the case of electron-hole symmetry, the phonon resonances may appear on both sides of the main elastic resonances in spectral function. A phonon-induced renormalization of the Andreev transmission levels is found and splitting of the phonon side bands for nonvanishing intradot Coulomb repulsion is observed. It is shown that linear conductance exhibits the polaron shift and suppression in the presence of the polaron transmission. In nonequilibrium situation the mechanism of the negative differential conductance (NDC) in the presence of competing magnetic electrode polarisation and the Coulomb correlations on the dot is analyzed. An influence of the polaron transmission through the Andreev intradot states on the NDC oscillations is also discussed.

  6. RKKY interaction in P-N junction based on surface states of 3D topological insulator

    NASA Astrophysics Data System (ADS)

    Zhang, Shuhui; Yang, Wen; Chang, Kai

    The RKKY interaction mediated by conduction electrons supplies a mechanism to realize the long-range coupling of localized spins which is desired for the spin devices. Here, we examine the controllability of RKKY interaction in P-N junction (PNJ) based on surface states of 3D topological insulator (3DTI). In this study, through quantum way but not usual classical analogy to light propagation, the intuitive picture for electron waves across the interface of PNJ is obtained, e.g., Klein tunneling, negative refraction and focusing. Moreover, we perform the numerical calculations for all kinds of RKKY interaction including the Heisenberg, Ising, and Dzyaloshinskii-Moriya terms. We find the focusing of surface states leads to the local augmentation of RKKY interaction. Most importantly, a dimension transition occurs, i.e., the decay rate of RKKY interaction from the deserved 1/R 2 to 1/ R . In addition, the quadratic gate-dependence of RKKY interaction is also beneficial to the application of 3DTI PNJ in the fields of spintronics and quantum computation. This work was supported by the MOST (Grant No. 2015CB921503, and No. 2014CB848700) and NSFC (Grant No. 11434010, No. 11274036, No. 11322542, and No. 11504018).

  7. Magnetic Tunnel Junction-Based On-Chip Microwave Phase and Spectrum Analyzer

    NASA Technical Reports Server (NTRS)

    Fan, Xin; Chen, Yunpeng; Xie, Yunsong; Kolodzey, James; Wilson, Jeffrey D.; Simons, Rainee N.; Xiao, John Q.

    2014-01-01

    A magnetic tunnel junction (MTJ)-based microwave detector is proposed and investigated. When the MTJ is excited by microwave magnetic fields, the relative angle between the free layer and pinned layer alternates, giving rise to an average resistance change. By measuring the average resistance change, the MTJ can be utilized as a microwave power sensor. Due to the nature of ferromagnetic resonance, the frequency of an incident microwave is directly determined. In addition, by integrating a mixer circuit, the MTJ-based microwave detector can also determine the relative phase between two microwave signals. Thus, the MTJ-based microwave detector can be used as an on-chip microwave phase and spectrum analyzer.

  8. Magnetic Tunnel Junction-Based On-Chip Microwave Phase and Spectrum Analyzer

    NASA Technical Reports Server (NTRS)

    Fan, Xin; Chen, Yunpeng; Xie, Yunsong; Kolodzey, James; Wilson, Jeffrey D.; Simons, Rainee N.; Xiao, John Q.

    2014-01-01

    A magnetic tunnel junction (MTJ)-based microwave detector is proposed and investigated. When the MTJ is excited by microwave magnetic fields, the relative angle between the free layer and pinned layer alternates, giving rise to an average resistance change. By measuring the average resistance change, the MTJ can be utilized as a microwave power sensor. Due to the nature of ferromagnetic resonance, the frequency of an incident microwave is directly determined. In addition, by integrating a mixer circuit, the MTJ-based microwave detector can also determine the relative phase between two microwave signals. Thus, the MTJbased microwave detector can be used as an on-chip microwave phase and spectrum analyzer.

  9. Design and simulation of an electrically pumped Schottky-junction-based plasmonic amplifier.

    PubMed

    Livani, Abdolber Mallah; Kaatuzian, Hassan

    2015-03-20

    We have investigated an amplifier which operates on surface plasmon polaritons (SPPs). A semiconductor is considered instead of dielectric since its interface with metal can support transverse-magnetic-polarized SPP propagation. A T-shaped cross section for the analyzed waveguide is considered. Metal-semiconductor interface conditions in particular can be regarded as a Schottky junction that has the capability of being pumped electrically. So compensation of propagation loss imposed by metal is possible and beyond that, amplification occurs. This configuration has advantages such as a simple fabrication process and compact size. This scheme has been implemented previously in 3.16, 1.7, and 0.8 μm for increasing the propagation length of the SPP but here, the free-space wavelength of 1.55 μm is considered for designing a plasmonic amplifier. This wavelength is selected because this is the most used wavelength in fiber-optic telecommunications due to its ultralow attenuation in silica. However, designing such an amplifier with too many effects that arise in a Schottky junction may be an extremely difficult process. So simplification, which regards essential effects and ignores nonimportant ones, is included. In this work, gold is considered as the metal and n+-doped In0.53Ga0.47As as the semiconductor to form a Schottky junction. The semiconductor has a doping concentration of 1×1018  cm-3. In forward bias of 1.25 V, the gain coefficient of the SPP mode is estimated up to 337  cm-1 which corresponds to 14.62 dB power gain for a 100 μm long amplifier. PMID:25968496

  10. Large magnetocapacitance effect in magnetic tunnel junctions based on Debye-Fröhlich model

    NASA Astrophysics Data System (ADS)

    Kaiju, Hideo; Takei, Masashi; Misawa, Takahiro; Nagahama, Taro; Nishii, Junji; Xiao, Gang

    2015-09-01

    The frequency dependence of tunneling magnetocapacitance (TMC) in magnetic tunnel junctions (MTJs) is investigated theoretically and experimentally. According to the calculation based on Debye-Fröhlich model combined with Julliere formula, the TMC ratio strongly depends on the frequency and it has the maximum peak at a specific frequency. The calculated frequency dependence of TMC is in good agreement with the experimental results obtained in MgO-based MTJs with a tunneling magnetoresistance (TMR) ratio of 108%, which exhibit a large TMC ratio of 155% at room temperature. This calculation also predicts that the TMC ratio can be as large as about 1000% for a spin polarization of 87%, while the TMR ratio is 623% for the same spin polarization. These theoretical and experimental findings provide a deeper understanding on AC spin-dependent transport in the MTJs and will open up wider opportunities for device applications, such as highly sensitive magnetic sensors and impedance-tunable devices.

  11. Parametric excitation in a magnetic tunnel junction-based spin torque oscillator

    SciTech Connect

    Dürrenfeld, P.; Iacocca, E.; Åkerman, J.; Muduli, P. K.

    2014-02-03

    Using microwave current injection at room temperature, we demonstrate parametric excitation of a magnetic tunnel junction (MTJ)-based spin-torque oscillator (STO). Parametric excitation is observed for currents below the auto-oscillation threshold, when the microwave current frequency f{sub e} is twice the STO free-running frequency f{sub 0}. Above threshold, the MTJ becomes parametrically synchronized. In the synchronized state, the STO exhibits an integrated power up to 5 times higher and a linewidth reduction of two orders of magnitude, compared to free-running conditions. We also show that the parametric synchronization favors single mode oscillations in the case of multimode excitation.

  12. Light-driven electron transport through a molecular junction based on cross-conjugated systems

    NASA Astrophysics Data System (ADS)

    Hsu, Liang-Yan; Xie, Dan; Rabitz, Herschel

    2014-09-01

    This work explores light-driven electron transport through cross-conjugated molecules with different numbers of alkenyl groups. In the framework of coherent quantum transport, the analysis uses single-particle Green's functions together with non-Hermitian Floquet theory. With realistic parameters stemming from spectroscopy, the simulations show that measurable current (˜10-11 A) caused by photon-assisted tunneling should be observed in a weak driving field (˜2 × 105 V/cm). Current-field intensity characteristics give one-photon and two-photon field amplitude power laws. The gap between the molecular orbital and the Fermi level of the electrodes is revealed by current-field frequency characteristics. Due to generalized parity symmetry, the cross-conjugated molecules with odd and even numbers of alkenyl groups exhibit completely different current-polarization characteristics, which may provide an advantageous feature in nanoelectronic applications.

  13. Large magnetocapacitance effect in magnetic tunnel junctions based on Debye-Fröhlich model

    SciTech Connect

    Kaiju, Hideo Takei, Masashi; Misawa, Takahiro; Nishii, Junji; Nagahama, Taro; Xiao, Gang

    2015-09-28

    The frequency dependence of tunneling magnetocapacitance (TMC) in magnetic tunnel junctions (MTJs) is investigated theoretically and experimentally. According to the calculation based on Debye-Fröhlich model combined with Julliere formula, the TMC ratio strongly depends on the frequency and it has the maximum peak at a specific frequency. The calculated frequency dependence of TMC is in good agreement with the experimental results obtained in MgO-based MTJs with a tunneling magnetoresistance (TMR) ratio of 108%, which exhibit a large TMC ratio of 155% at room temperature. This calculation also predicts that the TMC ratio can be as large as about 1000% for a spin polarization of 87%, while the TMR ratio is 623% for the same spin polarization. These theoretical and experimental findings provide a deeper understanding on AC spin-dependent transport in the MTJs and will open up wider opportunities for device applications, such as highly sensitive magnetic sensors and impedance-tunable devices.

  14. A Single-Material Logical Junction Based on 2D Crystal PdS2.

    PubMed

    Ghorbani-Asl, Mahdi; Kuc, Agnieszka; Miró, Pere; Heine, Thomas

    2016-02-01

    A single-material logical junction with negligible contact resistance is designed by exploiting quantum-confinement effects in 1T PdS2 . The metallic bilayer serves as electrodes for the semiconducting channel monolayer, avoiding contact resistance. Heat dissipation is then governed by tunnel loss, which becomes negligible at channel lengths larger than 2.45 nm. This value marks the integration limit for a conventional 2D transistor. PMID:26632273

  15. Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces

    PubMed Central

    Ngo, Thach D.N.; Chang, Jung-Won; Lee, Kyujoon; Han, Seungju; Lee, Joon Sung; Kim, Young Heon; Jung, Myung-Hwa; Doh, Yong-Joo; Choi, Mahn-Soo; Song, Jonghyun; Kim, Jinhee

    2015-01-01

    Complex oxide systems have attracted considerable attention because of their fascinating properties, including the magnetic ordering at the conducting interface between two band insulators, such as LaAlO3 and SrTiO3. However, the manipulation of the spin degree of freedom at the LaAlO3/SrTiO3 heterointerface has remained elusive. Here, we have fabricated hybrid magnetic tunnel junctions consisting of Co and LaAlO3/SrTiO3 ferromagnets with the insertion of a Ti layer in between, which clearly exhibit magnetic switching and the tunnelling magnetoresistance effect below 10 K. The magnitude and sign of the tunnelling magnetoresistance are strongly dependent on the direction of the rotational magnetic field parallel to the LaAlO3/SrTiO3 plane, which is attributed to a strong Rashba-type spin-orbit coupling in the LaAlO3/SrTiO3 heterostructure. Our study provides a further support for the existence of the macroscopic ferromagnetism at LaAlO3/SrTiO3 heterointerfaces and opens a novel route to realize interfacial spintronics devices. PMID:26268611

  16. Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning.

    PubMed

    Nakaharai, Shu; Yamamoto, Mahito; Ueno, Keiji; Tsukagoshi, Kazuhito

    2016-06-15

    The polarity of the charge carriers injected through Schottky junctions of α-phase molybdenum ditelluride (α-MoTe2) and various metals was characterized. We found that the Fermi-level pinning in the metal/α-MoTe2 Schottky junction is so weak that the polarity of the carriers (electron or hole) injected from the junction can be controlled by the work function of the metals, in contrast to other transition metal dichalcogenides such as MoS2. From the estimation of the Schottky barrier heights, we obtained p-type carrier (hole) injection from a Pt/α-MoTe2 junction with a Schottky barrier height of 40 meV at the valence band edge. n-Type carrier (electron) injection from Ti/α-MoTe2 and Ni/α-MoTe2 junctions was also observed with Schottky barrier heights of 50 and 100 meV, respectively, at the conduction band edge. In addition, enhanced ambipolarity was demonstrated in a Pt-Ti hybrid contact with a unique structure specially designed for polarity-reversible transistors, in which Pt and Ti electrodes were placed in parallel for injecting both electrons and holes. PMID:27203118

  17. Analysis and simulation of nonlinearity and effects of spontaneous emission in Schottky-junction-based plasmonic amplifiers.

    PubMed

    Livani, Abdolber Mallah; Kaatuzian, Hassan

    2015-07-01

    An amplifier that operates on surface plasmon polaritons has been analyzed and simulated. Nonlinearity behavior and the spontaneous emission effects of the plasmonic amplifier are investigated in this paper. A rate equations approach has been used in which parameters are derived from simulation results of the plasmonic amplifier (Silvaco/ATLAS). Details on the method of this derivation are included, which were not previously reported. Rate equations are solved numerically by MATLAB codes. These codes verify the Silvaco results. The plasmonic amplifier operates on surface plasmons with a free-space wavelength of 1550 nm. Results show that, even without the effect of spontaneous emission, gain of the plasmonic amplifier saturates in high input levels. Saturation power, which can be used for comparing nonlinearity of different amplifiers, is 2.1 dBm for this amplifier. Amplified spontaneous emission reduces the gain of the amplifiers, which is long. There is an optimum value for the length of the amplifier. For the amplifier of this work, the optimum length for the small signal condition is 265 μm. PMID:26193159

  18. Sub-nanometer atomic layer deposition for spintronics in magnetic tunnel junctions based on graphene spin-filtering membranes.

    PubMed

    Martin, Marie-Blandine; Dlubak, Bruno; Weatherup, Robert S; Yang, Heejun; Deranlot, Cyrile; Bouzehouane, Karim; Petroff, Frédéric; Anane, Abdelmadjid; Hofmann, Stephan; Robertson, John; Fert, Albert; Seneor, Pierre

    2014-08-26

    We report on the successful integration of low-cost, conformal, and versatile atomic layer deposited (ALD) dielectric in Ni–Al2O3–Co magnetic tunnel junctions (MTJs) where the Ni is coated with a spin-filtering graphene membrane. The ALD tunnel barriers, as thin as 0.6 nm, are grown layer-by-layer in a simple, low-vacuum, ozone-based process, which yields high-quality electron-transport barriers as revealed by tunneling characterization. Even under these relaxed conditions, including air exposure of the interfaces, a significant tunnel magnetoresistance is measured highlighting the robustness of the process. The spin-filtering effect of graphene is enhanced, leading to an almost fully inversed spin polarization for the Ni electrode of −42%. This unlocks the potential of ALD for spintronics with conformal, layer-by-layer control of tunnel barriers in magnetic tunnel junctions toward low-cost fabrication and down-scaling of tunnel resistances.

  19. Magnetic Tunnel Junctions Based on CrO2/SnO2 Epitaxial Bilayers

    SciTech Connect

    Miao, G. X.; LeClair, P.; Gupta, A.; Varela del Arco, Maria; Pennycook, Stephen J

    2006-01-01

    Magnetic tunnel junctions (MTJs) were fabricated using thin films of the half-metallic ferromagnet CrO2, employing semiconducting SnO2 tunnel barriers. Heteroepitaxial CrO2/SnO2 bilayers were grown on (100)-TiO2 substrates via chemical vapor deposition under atmospheric conditions. X-ray diffraction and transmission electron microscopy were used to confirm heteroepitaxy. A polycrystalline cobalt film forms the top magnetic electrode, yielding CrO2(001)/SnO2(001)/Co structures after patterning. Tunneling magnetoresistances (TMR) up to +14% at 5 K were observed. The sign of the TMR reverses for barrier thicknesses < 1nm, attributed to tunneling being dominated by Co-3d states at low thicknesses, and Co-4s states at larger thicknesses.

  20. Tectonics and mechanism of a spreading ridge subduction at the Chile Triple Junction based on new marine geophysical data

    NASA Astrophysics Data System (ADS)

    Matsumoto, T.; Doi, A.; Kise, S.; Abe, N.

    2010-12-01

    The Chile Triple Junction (CTJ), an RTT-type triple junction located at 46°30'S off Taitao Peninsula, the western coast of Chile, is to be remarked in that the Chile Ridge, one of the typical mid-oceanic ridges that generate oceanic plates, is subducting underneath the South American continental plate. It is well known that earthquakes occur frequently off the Chilean coast. But earthquakes never occur on and around the CTJ and the fracture zones nearby (Tilmann et al., 2008). A thick crust is usually developed below an ordinary oceanic ridge. In this case the ridge never subducts due to the thick crust supported by the buoyancy of the mantle materials, even though the ridge reaches a trench. Or the subduction of the ridge may be delayed as compared with the case of the neighbouring sea floor. The purpose of this study is to solve the problem of the mechanism of a smooth subduction of the spreading ridge at the trench and the regional tectonics around the CTJ, mainly based on the marine geophysical data collected by the recent MR08-06 cruise by R/V MIRAI (Abe et al., AGU Fall 2009) and other cruise data from National Geophysical Data Center. Isostatic equilibrium in addition to the profiles of topography and gravity across the trench were examined on both sides of the CTJ. One of the principal results of this study is that ridge axis is associated with an axial deep covered with thick sediment unlike the case of typical ridge crests. The profiles of both topography and free air anomaly at Segment-I on Chile Ridge (just before subduction at Chile Trench) show quite different patterns from those at ordinary subduction zones. In addition, the topography of the seaward side is flat with poor relief and the abrupt landside slope is attached to the trench axis. To the south of the CTJ, the area of relatively negative free air anomaly reaches from the seaward side toward the fore-arc. This is due to the weight of the thick sediment accumulation apparently supplied from the coast. The single-channel seismic (SCS) profiles across the trench axis could not describe ridge subduction in detail, maybe due to the effect of the steep accretionary zone which interferes the penetration of acoustic signal into the sub-seafloor. Both ‘Outer swell’ and ‘outer gravity high’ which are regularly observed at the trench area in the western Pacific are missing in this study area. Both are derived from elastic bending of the rigid plate just before subduction. The observed topography and gravity data at the CTJ suggest that the subducting plate (both Nazca and Antarctic plates) is still hot and quick heat consumption may take place at the trench even at the spreading ridge, which may attain the smooth subduction at the CTJ.

  1. Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure

    NASA Astrophysics Data System (ADS)

    Suzuki, D.; Natsui, M.; Mochizuki, A.; Miura, S.; Honjo, H.; Kinoshita, K.; Fukami, S.; Sato, H.; Ikeda, S.; Endoh, T.; Ohno, H.; Hanyu, T.

    2014-05-01

    A compact nonvolatile programmable switch (NVPS) using 90 nm CMOS technology together with perpendicular magnetic tunnel junction (p-MTJ) devices is fabricated for zero-standby-power field-programmable gate array. Because routing information does not change once it is programmed into an NVPS, high-speed read and write accesses are not required and a write-control transistor can be shared among all the NVPSs, which greatly simplifies structure of the NVPS. In fact, the effective area of the proposed NVPS is reduced by 40% compared to that of a conventional MTJ-based NVPS. The instant on/off behavior without external nonvolatile memory access is also demonstrated using the fabricated test chip.

  2. Magnetic Tunnel Junction Based Long-Term Short-Term Stochastic Synapse for a Spiking Neural Network with On-Chip STDP Learning.

    PubMed

    Srinivasan, Gopalakrishnan; Sengupta, Abhronil; Roy, Kaushik

    2016-01-01

    Spiking Neural Networks (SNNs) have emerged as a powerful neuromorphic computing paradigm to carry out classification and recognition tasks. Nevertheless, the general purpose computing platforms and the custom hardware architectures implemented using standard CMOS technology, have been unable to rival the power efficiency of the human brain. Hence, there is a need for novel nanoelectronic devices that can efficiently model the neurons and synapses constituting an SNN. In this work, we propose a heterostructure composed of a Magnetic Tunnel Junction (MTJ) and a heavy metal as a stochastic binary synapse. Synaptic plasticity is achieved by the stochastic switching of the MTJ conductance states, based on the temporal correlation between the spiking activities of the interconnecting neurons. Additionally, we present a significance driven long-term short-term stochastic synapse comprising two unique binary synaptic elements, in order to improve the synaptic learning efficiency. We demonstrate the efficacy of the proposed synaptic configurations and the stochastic learning algorithm on an SNN trained to classify handwritten digits from the MNIST dataset, using a device to system-level simulation framework. The power efficiency of the proposed neuromorphic system stems from the ultra-low programming energy of the spintronic synapses. PMID:27405788

  3. Effect of an interface Mg insertion layer on the reliability of a magnetic tunnel junction based on a Co2FeAl full-Heusler alloy

    NASA Astrophysics Data System (ADS)

    Lee, Jung-Min; Kil, Gyu Hyun; Lee, Gae Hun; Choi, Chul Min; Song, Yun-Heub; Sukegawa, Hiroaki; Mitani, Seiji

    2014-04-01

    The reliability of a magnetic tunnel junction (MTJ) based on a Co2FeAl (CFA) full-Heusler alloy with a MgO tunnel barrier was evaluated. In particular, the effect of a Mg insertion layer under the MgO was investigated in view of resistance drift by using various voltage stress tests. We compared the resistance change during constant voltage stress (CVS) and confirmed a trap/detrap phenomenon during the interval stress test for samples with and without a Mg insertion layer. The MTJ with a Mg insertion layer showed a relatively small resistance change for the CVS test and a reduced trap/detrap phenomenon for the interval stress test compared to the sample without a Mg insertion layer. This is understood to be caused by the improved crystallinity at the bottom of the CFA/MgO interface due to the Mg insertion layer, which provides a smaller number of trap site during the stress test. As a result, the interface condition of the MgO layer is very important for the reliability of a MTJ using a full-Heusler alloy, and the the insert of a Mg layer at the MgO interface is expected to be an effective method for enhancing the reliability of a MTJ.

  4. Investigation of TiO{sub x} barriers for their use in hybrid Josephson and tunneling junctions based on pnictide thin films

    SciTech Connect

    Döring, S. Monecke, M.; Schmidt, S.; Schmidl, F.; Tympel, V.; Seidel, P.; Engelmann, J.; Kurth, F.; Iida, K.; Holzapfel, B.; Haindl, S.; Mönch, I.

    2014-02-28

    We tested oxidized titanium layers as barriers for hybrid Josephson junctions with high I{sub c}R{sub n}-products and for the preparation of junctions for tunneling spectroscopy. For that we firstly prepared junctions with conventional superconductor electrodes, such as lead and niobium, respectively. By tuning the barrier thickness, we were able to change the junction's behavior from a Josephson junction to tunnel-like behavior applicable for quasi-particle spectroscopy. Subsequently, we transferred the technology to junctions using Co-doped BaFe{sub 2}As{sub 2} thin films prepared by pulsed laser deposition as base electrode and evaporated Pb as counter electrode. For barriers with a thickness of 1.5 nm, we observe clear Josephson effects with I{sub c}R{sub n}≈90 μV at 4.2 K. These junctions behave SNS'-like (SNS: superconductor-normal conductor-superconductor) and are dominated by Andreev reflection transport mechanism. For junctions with barrier thickness of 2.0 nm and higher, no Josephson but SIS'- (SIS: superconductor-insulator-superconductor) or SINS'-like (SINS: superconductor-normal conductor-insulator-superconductor) behavior with a tunnel-like conductance spectrum was observed.

  5. Magnetic Tunnel Junction Based Long-Term Short-Term Stochastic Synapse for a Spiking Neural Network with On-Chip STDP Learning

    PubMed Central

    Srinivasan, Gopalakrishnan; Sengupta, Abhronil; Roy, Kaushik

    2016-01-01

    Spiking Neural Networks (SNNs) have emerged as a powerful neuromorphic computing paradigm to carry out classification and recognition tasks. Nevertheless, the general purpose computing platforms and the custom hardware architectures implemented using standard CMOS technology, have been unable to rival the power efficiency of the human brain. Hence, there is a need for novel nanoelectronic devices that can efficiently model the neurons and synapses constituting an SNN. In this work, we propose a heterostructure composed of a Magnetic Tunnel Junction (MTJ) and a heavy metal as a stochastic binary synapse. Synaptic plasticity is achieved by the stochastic switching of the MTJ conductance states, based on the temporal correlation between the spiking activities of the interconnecting neurons. Additionally, we present a significance driven long-term short-term stochastic synapse comprising two unique binary synaptic elements, in order to improve the synaptic learning efficiency. We demonstrate the efficacy of the proposed synaptic configurations and the stochastic learning algorithm on an SNN trained to classify handwritten digits from the MNIST dataset, using a device to system-level simulation framework. The power efficiency of the proposed neuromorphic system stems from the ultra-low programming energy of the spintronic synapses. PMID:27405788

  6. Magnetic Tunnel Junction Based Long-Term Short-Term Stochastic Synapse for a Spiking Neural Network with On-Chip STDP Learning

    NASA Astrophysics Data System (ADS)

    Srinivasan, Gopalakrishnan; Sengupta, Abhronil; Roy, Kaushik

    2016-07-01

    Spiking Neural Networks (SNNs) have emerged as a powerful neuromorphic computing paradigm to carry out classification and recognition tasks. Nevertheless, the general purpose computing platforms and the custom hardware architectures implemented using standard CMOS technology, have been unable to rival the power efficiency of the human brain. Hence, there is a need for novel nanoelectronic devices that can efficiently model the neurons and synapses constituting an SNN. In this work, we propose a heterostructure composed of a Magnetic Tunnel Junction (MTJ) and a heavy metal as a stochastic binary synapse. Synaptic plasticity is achieved by the stochastic switching of the MTJ conductance states, based on the temporal correlation between the spiking activities of the interconnecting neurons. Additionally, we present a significance driven long-term short-term stochastic synapse comprising two unique binary synaptic elements, in order to improve the synaptic learning efficiency. We demonstrate the efficacy of the proposed synaptic configurations and the stochastic learning algorithm on an SNN trained to classify handwritten digits from the MNIST dataset, using a device to system-level simulation framework. The power efficiency of the proposed neuromorphic system stems from the ultra-low programming energy of the spintronic synapses.

  7. A 600-µW ultra-low-power associative processor for image pattern recognition employing magnetic tunnel junction-based nonvolatile memories with autonomic intelligent power-gating scheme

    NASA Astrophysics Data System (ADS)

    Ma, Yitao; Miura, Sadahiko; Honjo, Hiroaki; Ikeda, Shoji; Hanyu, Takahiro; Ohno, Hideo; Endoh, Tetsuo

    2016-04-01

    A novel associative processor using magnetic tunnel junction (MTJ)-based nonvolatile memories has been proposed and fabricated under a 90 nm CMOS/70 nm perpendicular-MTJ (p-MTJ) hybrid process for achieving the exceptionally low-power performance of image pattern recognition. A four-transistor 2-MTJ (4T-2MTJ) spin transfer torque magnetoresistive random access memory was adopted to completely eliminate the standby power. A self-directed intelligent power-gating (IPG) scheme specialized for this associative processor is employed to optimize the operation power by only autonomously activating currently accessed memory cells. The operations of a prototype chip at 20 MHz are demonstrated by measurement. The proposed processor can successfully carry out single texture pattern matching within 6.5 µs using 128-dimension bag-of-feature patterns, and the measured average operation power of the entire processor core is only 600 µW. Compared with the twin chip designed with 6T static random access memory, 91.2% power reductions are achieved. More than 88.0% power reductions are obtained compared with the latest associative memories. The further power performance analysis is discussed in detail, which verifies the special superiority of the proposed processor in power consumption for large-capacity memory-based VLSI systems.

  8. Nanofabrication of highly ordered, tunable metallic mesostructures via quasi-hard-templating of lyotropic liquid crystals

    PubMed Central

    Zhang, Xinyi; Lu, Wei; Dai, Jiyan; Bourgeois, Laure; Yao, Jianfeng; Wang, Huanting; Friend, James R.; Zhao, Dongyuan; MacFarlane, Douglas R.

    2014-01-01

    The synthesis of metal frameworks perforated with nanotunnels is a challenge because metals have high surface energies that favor low surface area structures; traditional liquid-crystal templating techniques cannot achieve the synthetic control required. We report a synthetic strategy to fabricate metal nanomaterials with highly ordered, tunable mesostructures in confined systems based on a new quasi-hard-templating liquid-crystals mechanism. The resulting platinum nanowires exhibit long range two-dimensional hexagonally ordered mesopore structures. In addition, single crystalline hexagonal mesoporous platinum nanowires with dominant {110} facets have been synthesized. Finally, we demonstrate that the mesostructures of metal nanomaterials can be tuned from hexagonal to lamellar mesostructures. PMID:25502015

  9. Energetics and electronic structure of tubular Si vacancies filled with carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Kochi, Taketo; Okada, Susumu

    2016-05-01

    We studied the energetics and electronic structure of tubular Si vacancies incorporating a carbon nanotube (CNT), using first-principles total-energy calculations based on the density functional theory. Our calculations show that the incorporated CNT into a Si nanotunnel acts as an atom-thickness liner providing the electrostatically flat nanoscale space inside them by shielding the dangling bond states of tubular Si vacancies. The incorporation of the CNT into the tubular Si vacancies is exothermic with an energy gain up to 7.4 eV/nm depending on the diameters of the vacancy and encapsulated CNT. The electronic states of the vacancy substantially hybridize with those of the CNT, leading to the complex electronic energy band near the Fermi level.

  10. Multifractal analysis of satellite images. (Polish Title: Multifraktalna analiza zobrazowan satelitarnych)

    NASA Astrophysics Data System (ADS)

    Wawrzaszek, A.; Krupiński, M.; Drzewiecki, W.; Aleksandrowicz, S.

    2015-12-01

    Research presented in this paper is focused on the efficiency assessment of multifractal description as a tool for Image Information Mining. Large datasets of very high spatial resolution satellite images (WorldView-2 and EROS-A) have been analysed. The results have confirmed the superiority of multifractals as global image descriptors in comparison to monofractals. Moreover, their usefulness in image classification by using decision trees classifiers was confirmed, also in comparison with textural features. Filtration process preceding fractal and multifractal features estimations was also proved to improve classification results. Additionally, airborne hyperspectral data have been initially analysed. Fractal dimension shows high potential for the description of hyperspectral data. To summarise all conducted tests indicate the usefulness of multifractal formalism in various aspects of remote sensing. Prepared methodology can be further developed and used for more specific tasks, for example in change detection or in the description of hyperspectal data complexity.

  11. Theory of back-surface-field solar cells

    NASA Technical Reports Server (NTRS)

    Vonroos, O.

    1979-01-01

    Report describes simple concise theory of back-surface-field (BSF) solar cells (npp + junctions) based on Shockley's depletion-layer approximation and cites superiority of two-junction devices over conventional unijunction cells.

  12. Research on method of geometry and spectral calibration of pushbroom dispersive hyperspectral imager

    NASA Astrophysics Data System (ADS)

    He, Zhiping; Shu, Rong; Wang, Jianyu

    2012-11-01

    Development and application of airborne and aerospace hyperspectral imager press for high precision geometry and spectral calibration of pixels of image cube. The research of geometry and spectral calibration of pushbroom hyperspectral imager, its target is giving the coordinate of angle field of view and center wavelength of each detect unit in focal plane detector of hyperspectral imager, and achieves the high precision, full field of view, full channel geometry and spectral calibration. It is importance for imaging quantitative and deep application of hyperspectal imager. The paper takes the geometry and spectral calibration of pushbroom dispersive hyperspectral imager as case study, and research on the constitution and analysis of imaging mathematical model. Aimed especially at grating-dispersive hyperspectral imaging, the specialty of the imaging mode and dispersive method has been concretely analyzed. Based on the analysis, the theory and feasible method of geometry and spectral calibration of dispersive hyperspectral imager is set up. The key technique has been solved is As follows: 1). the imaging mathematical model and feasible method of geometry and spectral calibration for full pixels of image cube has been set up, the feasibility of the calibration method has been analyzed. 2). the engineering model and method of the geometry and spectral calibration of pushbroom dispersive hyperspectral imager has been set up and the calibration equipment has been constructed, and the calibration precision has been analyzed.

  13. [Advance in the study of the powdered weathering profile of sandstone on China Yungang Grottoes based on VIS/NIR hyperspectral imaging].

    PubMed

    Zhou, Xiao; Gao, Feng; Zhang, Ai-wu; Zhou, Ke-chao

    2012-03-01

    Yungang Grottoes were built in the mid-5th century A. D., and named as a UNESCO World Heritage site in 2001. Most of the grottoes were built on the feldspathic quartz sandstones. They were seriously damaged due to the environmental impact. The main form of the weathering is the powdered weathering. The weathering conditions are generally characterized by electrical sounding, penetration resistance, molecular spectroscopy, etc. However, although these methods can give good results about the weathering conditions for a specified sample or site, they are not suitable for providing a global profile of the weathering conditions. The present paper provides a method for effectively and roundly assessing the overall powdered weathering conditions of the Yungang Grottoes based on hyperspectral imaging. Powdered weathering could change the structure and granularity of the sandstone, and thus change the spectral reflectance of the sandstone surface. Based on the hyperspectral data collected from 400 nm to 1 000 nm and normalized by log residuals method, the powdered weathering conditions of the sandstones were classified into strong weathering and weak weathering. The weathering profile was also mapped in the Envi platform. The mapping images were verified using the measured hyperspectal data of the columns in front of the 9th and 10th grottoes as the examples. The mapping images were substantially fitted to the real observations, showing that hyperspectral imaging can be used to estimate the overall powdered weathering of the sandstones.

  14. The Narrow Band AOTF Based Hyperspectral Microscopic Imaging on the Rat Skin Stratum Configuration

    NASA Astrophysics Data System (ADS)

    Zhang, C.; Wang, H.; Huang, J.; Gao, Q.

    2014-08-01

    A noncollinear acousto-optic tunable filter (AOTF) was designed with a comprehensive treatment of the properties of TeO2 as an acoustooptic (A-O) material. The results of optical testing validated that it predicted the performance of the designed AOTF. The bandwidth of the AOTF was very narrow in the visible light range. The high spectral resolution of AOTF was useful in practical applications to the hyperspectral imaging. The experimentally observed spectral pattern of the diffracted light was nearly the same as the theoretical result. The measured tuning relationship between the diffracted central optical wavelength and acoustic frequency was in accordance with the theoretical prediction. It demonstrates the accuracy of our design theory. Furthermore, by selecting the AOTF as the spectroscopic element, a hyperspectral microscopic imaging system was designed. The hyperspectral microscopic images of the rat skin tissue under the different optical center wavelength were acquired. The experimental results indicated that the imaging performance was satisfactory. The stratums of the rat skin can be clearly distinguished. The inner details of the epidermis and the corium can be shown on the hyperspectral microscopic images. Some differences also can be found by the comparison of the hyperspectal images under the different optical wavelengths. The study indicated the applicability and the advantage of our system on biomedicine area.

  15. Time-temperature evolution of microtextures and contained fluids in a plutonic alkali feldspar during heating

    NASA Astrophysics Data System (ADS)

    Parsons, Ian; Fitz Gerald, John D.; Lee, James K. W.; Ivanic, Tim; Golla-Schindler, Ute

    2010-08-01

    Microtextural changes brought about by heating alkali feldspar crystals from the Shap granite, northern England, at atmospheric pressure, have been studied using transmission and scanning electron microscopy. A typical unheated phenocryst from Shap is composed of about 70 vol% of tweed orthoclase with strain-controlled coherent or semicoherent micro- and crypto-perthitic albite lamellae, with maximum lamellar thicknesses <1 μm. Semicoherent lamellae are encircled by nanotunnel loops in two orientations and cut by pull-apart cracks. The average bulk composition of this microtexture is Ab27.6Or71.8An0.6. The remaining 30 vol% is deuterically coarsened, microporous patch and vein perthite composed of incoherent subgrains of oligoclase, albite and irregular microcline. The largest subgrains are ~3 μm in diameter. Heating times in the laboratory were 12 to 6,792 h and T from 300°C into the melting interval at 1,100°C. Most samples were annealed at constant T but two were heated to simulate an 40Ar/39Ar step-heating schedule. Homogenisation of strain-controlled lamellae by Na↔K inter-diffusion was rapid, so that in all run products at >700°C, and after >48 h at 700°C, all such regions were essentially compositionally homogeneous, as indicated by X-ray analyses at fine scale in the transmission electron microscope. Changes in lamellar thickness with time at different T point to an activation energy of ~350 kJmol-1. A lamella which homogenised after 6,800 h at 600°C, therefore, would have required only 0.6 s to do so in the melting interval at 1,100°C. Subgrains in patch perthite homogenised more slowly than coherent lamellae and chemical gradients in patches persisted for >5,000 h at 700°C. Homogenisation T is in agreement with experimentally determined solvi for coherent ordered intergrowths, when a 50-100°C increase in T for An1 is applied. Homogenisation of lamellae appears to proceed in an unexpected manner: two smooth interfaces, microstructurally sharp

  16. Photoresponse enhancement in graphene/silicon infrared detector by controlling photocarrier collection

    NASA Astrophysics Data System (ADS)

    Tang, Xin; Zhang, Hengkai; Tang, Xiaobing; Lai, King W. C.

    2016-07-01

    Graphene/silicon junction based photodetectors have attracted great interest due to their superior characteristics like large photosensitive area, fast photocarrier collection and low dark current. Currently, the weak optical absorption and short photocarrier lifetime of graphene remain major limitations for detection of infrared light with wavelengths above 1.2 μm. Here, we elucidate the mechanism of photocarrier transport in graphene/silicon junction based photodetector and propose a theoretical model to study the design and effect of finger-electrode structures on the photocurrent in graphene. We demonstrate that the top finger-like electrode in graphene/silicon photodetector can be designed to enhance the photocarrier collection efficiency in graphene by reducing the average transport distance of photocarriers. Therefore, the photoresponsivity of the graphene/silicon junction based photodetector can be increased. Our results have successfully demonstrated that by optimizing the design of finger electrodes, 4 times enhancement of photocurrents in graphene can be obtained at room temperature.

  17. Server-side Filtering and Aggregation within a Distributed Environment

    NASA Astrophysics Data System (ADS)

    Currey, J. C.; Bartle, A.

    2015-12-01

    Intercalibration, validation, and data mining use cases require more efficient access to the massive volumes of observation data distributed across multiple agency data centers. The traditional paradigm of downloading large volumes of data to a centralized server or desktop computer for analysis is no longer viable. More analysis should be performed within the host data centers using server-side functions. Many comparative analysis tasks require far less than 1% of the available observation data. The Multi-Instrument Intercalibration (MIIC) Framework provides web services to find, match, filter, and aggregate multi-instrument observation data. Matching measurements from separate spacecraft in time, location, wavelength, and viewing geometry is a difficult task especially when data are distributed across multiple agency data centers. Event prediction services identify near coincident measurements with matched viewing geometries near orbit crossings using complex orbit propagation and spherical geometry calculations. The number and duration of event opportunities depend on orbit inclinations, altitude differences, and requested viewing conditions (e.g., day/night). Event observation information is passed to remote server-side functions to retrieve matched data. Data may be gridded, spatially convolved onto instantaneous field-of-views, or spectrally resampled or convolved. Narrowband instruments are routinely compared to hyperspectal instruments such as AIRS and CRIS using relative spectral response (RSR) functions. Spectral convolution within server-side functions significantly reduces the amount of hyperspectral data needed by the client. This combination of intelligent selection and server-side processing significantly reduces network traffic and data to process on local servers. OPeNDAP is a mature networking middleware already deployed at many of the Earth science data centers. Custom OPeNDAP server-side functions that provide filtering, histogram analysis (1D

  18. Element Transport in Granulite-Facies Fluids: a TEM Study in Exsolved Ternary Feldspar From Charnockites of Lofoten, Norway

    NASA Astrophysics Data System (ADS)

    Hartmann, K. T.; Wirth, R.; Markl, G.

    2006-12-01

    TEM was used to study exsolution features in feldspars indicative of high-p-T fluid transport during granulite facies metamorphism in charnockites from the Lofoten Islands in Northern Norway. The protoliths formed about 1750 Ma ago, at about ~800 to 900°C and 4 kbar. During a crustal thickening event, they reached high-pressure granulite-facies conditions of about 8-11 kbar at ~700°C (1). During this event, tiny magmatic pyroxenes enclosed in alkali feldspar reacted with a fluid to Cl-rich amphiboles and biotite. These have always a direct connection to elongated albite exsolutions which seem to surround amphiboles and biotite arranged in a linear fashion. This is evidence of extensive element transport (Fe, H, Cl) through the feldspar. The primary pyroxenes show no spatial relation to the lamellae and are evenly distributed in the feldspars. We tried to unravel the details of the transport and transformation mechanisms recorded by these textures using EMPA and TEM. Focused Ion Beam (FIB) prepared TEM-foils (2) revealed that pyroxenes, when spatially connected to albite exsolutions, show dissolution features. Additionally, amorphous Fe- and Cl-bearing material was found in albite lamellae even when not connected to a pyroxene. Based on composition, nanostructures and the known p-T-history, we propose the following succession of events. Feldspar containing small magmatic pyroxenes began to exsolve between about 800 and 650°C. The exsolution lamellae changed from coherent to incoherent and a fluid infiltrated the feldspar along nanotunnels (see also 3) at the margins of the exsolution lamellae. When the fluid had access to pyroxene, reaction took place and either amphibole or biotite formed. This study shows that fluid migration at elevated p and T is strongly dependent on the mineralogy of the percolated rocks. Exsolving alkali feldspars may offer fluid pathways not yet considered in studies on metamorphic fluid flow which is typically believed to happen along

  19. Quantum memory with millisecond coherence in circuit QED

    NASA Astrophysics Data System (ADS)

    Reagor, Matthew; Pfaff, Wolfgang; Axline, Christopher; Heeres, Reinier W.; Ofek, Nissim; Sliwa, Katrina; Holland, Eric; Wang, Chen; Blumoff, Jacob; Chou, Kevin; Hatridge, Michael J.; Frunzio, Luigi; Devoret, Michel H.; Jiang, Liang; Schoelkopf, Robert J.

    2016-07-01

    Significant advances in coherence render superconducting quantum circuits a viable platform for fault-tolerant quantum computing. To further extend capabilities, highly coherent quantum systems could act as quantum memories for these circuits. A useful quantum memory must be rapidly addressable by Josephson-junction-based artificial atoms, while maintaining superior coherence. We demonstrate a superconducting microwave cavity architecture that is highly robust against major sources of loss that are encountered in the engineering of circuit QED systems. The architecture allows for storage of quantum superpositions in a resonator on the millisecond scale, while strong coupling between the resonator and a transmon qubit enables control, encoding, and readout at MHz rates. This extends the maximum available coherence time attainable in superconducting circuits by almost an order of magnitude compared to earlier hardware. Our design is an ideal platform for studying coherent quantum optics and marks an important step towards hardware-efficient quantum computing in Josephson-junction-based quantum circuits.

  20. Challenges in collecting hyperspectral imagery of coastal waters using Unmanned Aerial Vehicles (UAVs)

    NASA Astrophysics Data System (ADS)

    English, D. C.; Herwitz, S.; Hu, C.; Carlson, P. R., Jr.; Muller-Karger, F. E.; Yates, K. K.; Ramsewak, D.

    2013-12-01

    Airborne multi-band remote sensing is an important tool for many aquatic applications; and the increased spectral information from hyperspectral sensors may increase the utility of coastal surveys. Recent technological advances allow Unmanned Aerial Vehicles (UAVs) to be used as alternatives or complements to manned aircraft or in situ observing platforms, and promise significant advantages for field studies. These include the ability to conduct programmed flight plans, prolonged and coordinated surveys, and agile flight operations under difficult conditions such as measurements made at low altitudes. Hyperspectral imagery collected from UAVs should allow the increased differentiation of water column or shallow benthic communities at relatively small spatial scales. However, the analysis of hyperspectral imagery from airborne platforms over shallow coastal waters differs from that used for terrestrial or oligotrophic ocean color imagery, and the operational constraints and considerations for the collection of such imagery from autonomous platforms also differ from terrestrial surveys using manned aircraft. Multispectral and hyperspectral imagery of shallow seagrass and coral environments in the Florida Keys were collected with various sensor systems mounted on manned and unmanned aircrafts in May 2012, October 2012, and May 2013. The imaging systems deployed on UAVs included NovaSol's Selectable Hyperspectral Airborne Remote-sensing Kit (SHARK), a Tetracam multispectral imaging system, and the Sunflower hyperspectal imager from Galileo Group, Inc. The UAVs carrying these systems were Xtreme Aerial Concepts' Vision-II Rotorcraft UAV, MLB Company's Bat-4 UAV, and NASA's SIERRA UAV, respectively. Additionally, the Galileo Group's manned aircraft also surveyed the areas with their AISA Eagle hyperspectral imaging system. For both manned and autonomous flights, cloud cover and sun glint (solar and viewing angles) were dominant constraints on retrieval of quantitatively

  1. Hyper-Cam automated calibration method for continuous hyperspectral imaging measurements

    NASA Astrophysics Data System (ADS)

    Gagnon, Jean-Philippe; Habte, Zewdu; George, Jacks; Farley, Vincent; Tremblay, Pierre; Chamberland, Martin; Romano, Joao; Rosario, Dalton

    2010-04-01

    COTS hyperspectal sensors that allows for full autonomous data collection capability for the user. The accuracy of the automatic calibration was characterized and is presented in this paper.

  2. Potential Application of Novel Hyperspectral LIDAR for Monitoring Crops Nitrogen Stress

    NASA Astrophysics Data System (ADS)

    Shi, Shuo; Gong, Wei; Du, Lin; Sun, Jia; Yang, Jian

    2016-06-01

    Precision agriculture has always been the research hotspot around the world. And the optimization of nitrogen fertilization for crops is the core concerns. It is not only to improve the productivity of crops but also to avoid the environmental risks caused by over-fertilization. Therefore, accurate estimation of nitrogen status is crucial for determining an nitrogen recommendation. Remote sensing techniques have been widely used to monitor crops for years, and they could offer estimations for stress status diagnosis through obtaining vertical structure parameters and spectral reflectance properties of crops. As an active remote sensing technology, lidar is particularly attractive for 3-dimensional information at a high point density. It has unique edges in obtaining vertical structure parameters of crops. However, capability of spectral reflectance properties is what the current lidar technology lacks because of single wavelength detection. To solve this problem, the concept of novel hyperspectral lidar (HSL), which combines the advantages of hyperspectal reflectance with high 3-dimensional capability of lidar, was proposed in our study. The design of instrument was described in detail. A broadband laser pulse was emitted and reflectance spectrum with 32 channels could be detected. Furthermore, the experiment was carried out by the novel HSL system to testify the potential application for monitoring nitrogen stress. Rice under different levels of nitrogen fertilization in central China were selected as the object of study, and four levels of nitrogen fertilization (N1-N4) were divided. With the detection of novel lidar system, high precision structure parameters of crops could be provided. Meanwhile, spectral reflectance properties in 32 wavebands were also obtained. The high precision structure parameters could be used to evaluate the stress status of crops. And abundant spectral information in 32 wavebands could improve the capacity of lidar system significantly

  3. On the feasibility of an Erasable Programmable, Read-Only Memory (EPROM) based on Josephson technology

    NASA Astrophysics Data System (ADS)

    Barone, A.; Russo, M.

    1983-08-01

    An optically programmable and erasable Josephson read-only memory cell has been recently proposed by Faris (1980). Some aspects of the feasibility of such a device are considered here on the basis of experimental data for light-sensitive Josephson junctions based on Pb-CdS-In structures. Although far from being conclusive, the results support the idea of an EPROM device in which threshold curves can be continuously adjusted a posteriori by optical input.

  4. Automated position control of a surface array relative to a liquid microjunction surface sampler

    DOEpatents

    Van Berkel, Gary J.; Kertesz, Vilmos; Ford, Michael James

    2007-11-13

    A system and method utilizes an image analysis approach for controlling the probe-to-surface distance of a liquid junction-based surface sampling system for use with mass spectrometric detection. Such an approach enables a hands-free formation of the liquid microjunction used to sample solution composition from the surface and for re-optimization, as necessary, of the microjunction thickness during a surface scan to achieve a fully automated surface sampling system.

  5. Solar cells made by laser-induced diffusion directly from phosphine gas

    SciTech Connect

    Turner, G.B.; Tarrant, D.; Pollock, G.; Pressley, R.; Press, R.

    1981-12-15

    A new method for making p-n junctions based on immersion in a transparent dopant gas followed by irradiation with a pulsed laser is presented. An alexandrite laser was used, operating at 0.73 ..mu..m where photolysis of the dopant gas PH/sub 3/ does not occur. Multiple pulses of 2.2--2.7 J/cm/sup 2/ were used to make Si solar cells with total area efficiencies up to 8.6% without benefit of antireflection coatings.

  6. Resonant tunneling in graphene pseudomagnetic quantum dots.

    PubMed

    Qi, Zenan; Bahamon, D A; Pereira, Vitor M; Park, Harold S; Campbell, D K; Neto, A H Castro

    2013-06-12

    Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant tunneling. Valley degeneracy is broken in the presence of an external field, allowing the selective filtering of the valley and chirality of the states assisting in the resonant tunneling. Asymmetric strain conditions can be explored to select the exit channel of the y-junction.

  7. Engineering ferroelectric tunnel junctions through potential profile shaping

    SciTech Connect

    Boyn, S.; Garcia, V. Fusil, S.; Carrétéro, C.; Garcia, K.; Collin, S.; Deranlot, C.; Bibes, M.; Barthélémy, A.

    2015-06-01

    We explore the influence of the top electrode materials (W, Co, Ni, Ir) on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO{sub 3}. Large variations of the transport properties are observed at room temperature. In particular, the analysis of current vs. voltage curves by a direct tunneling model indicates that the metal/ferroelectric interfacial barrier height increases with the top-electrode work function. While larger metal work functions result in larger OFF/ON ratios, they also produce a large internal electric field which results in large and potentially destructive switching voltages.

  8. Nonintrusive Measurement Of Temperature Of LED Junction

    NASA Technical Reports Server (NTRS)

    Leidecker, Henning; Powers, Charles

    1991-01-01

    Temperature inferred from spectrum of emitted light. Method of determining temperature of junction based on two relevant characteristics of LED. Gap between valence and conduction electron-energy bands in LED material decreases with increasing temperature, causing wavelength of emitted photon to increase with temperature. Other, as temperature increases, non-radiative processes dissipate more of input electrical energy as heat and less as photons in band-gap wavelenth region; optical and quantum efficiencies decrease with increasing temperature. In principal, either characteristic alone used to determine temperature. However, desirable to use both to obtain indication of uncertainty.

  9. Electrodeposited CuInSe{sub 2} thin film devices

    SciTech Connect

    Raffaelle, R.P.; Mantovani, J.G.; Friedfeld, R.B.; Bailey, S.G.; Hubbard, S.M.

    1997-12-31

    The authors have been investigating the electrochemical deposition of thin films and junctions based on copper indium diselenide (CIS). CIS is considered to be one of the best absorber materials for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a simple and inexpensive method for producing thin-film CIS. The authors have produced both p and n type CIS thin films, as well as a CIS pn junction electrodeposited from a single aqueous solution. Optical bandgaps were determined for these thin films using transmission spectroscopy. Current versus voltage characteristics were measured for Schottky barriers on the individual films and for the pn junction.

  10. Stacking fault induced tunnel barrier in platelet graphite nanofiber

    SciTech Connect

    Lan, Yann-Wen E-mail: ywlan@phys.sinica.edu.tw; Chang, Yuan-Chih; Chang, Chia-Seng; Chen, Chii-Dong E-mail: ywlan@phys.sinica.edu.tw; Chang, Wen-Hao; Li, Yuan-Yao

    2014-09-08

    A correlation study using image inspection and electrical characterization of platelet graphite nanofiber devices is conducted. Close transmission electron microscopy and diffraction pattern inspection reveal layers with inflection angles appearing in otherwise perfectly stacked graphene platelets, separating nanofibers into two domains. Electrical measurement gives a stability diagram consisting of alternating small-large Coulomb blockade diamonds, suggesting that there are two charging islands coupled together through a tunnel junction. Based on these two findings, we propose that a stacking fault can behave as a tunnel barrier for conducting electrons and is responsible for the observed double-island single electron transistor characteristics.

  11. Quantum Thermoelectric Effects on the Nanoscale

    NASA Astrophysics Data System (ADS)

    Bergfield, Justin; Stafford, Charles

    2011-03-01

    An exact expression for the heat current in a nanostructure coupled to multiple metallic electrodes is derived, including both electron-electron and electron-phonon interactions. We use this formalism to investigate quantum effects on the flow of charge and entropy, and find an enormous quantum enhancement of thermoelectric effects in the vicinity of higher-order interferences in the transmission spectrum of a nanoscale junction. A nonequilibrium quantum analysis of a single-molecule junction based on 3,3'-biphenyldithiol demonstrates a maximum operating efficiency of 27% of the Carnot limit. Nonlocal quantum corrections to thermoelectric transport coefficients in multiterminal geometries are predicted.

  12. Theoretical study of piezo-phototronic nano-LEDs.

    PubMed

    Liu, Ying; Niu, Simiao; Yang, Qing; Klein, Benjamin D B; Zhou, Yu Sheng; Wang, Zhong Lin

    2014-11-12

    Two-dimensional finite-element simulation of the piezo-phototronic effect in p-n-junction-based devices is carried out for the first time. A charge channel can be induced at the p-n junction interface when strain is applied, given the n-side is a piezoelectric semiconductor and the p-type side is non-piezoelectric semiconductor. This provides the first simulated evidence supporting the previously suggested mechanism responsible for the experimentally observed gigantic change of light-emission efficiency in piezo-phototronic light-emitting devices.

  13. Energetic initiators with narrow firing thresholds using Al/CuO Schottky junctions

    NASA Astrophysics Data System (ADS)

    Wang, Feng; Zhu, Peng; Li, Jie; Hu, Bo; Shen, Ruiqi; Ye, Yinghua

    2016-07-01

    We designed and prepared Schottky-junction-based Al/CuO energetic initiators with narrow firing thresholds according to Schottky barrier theory. Using various characterization methods, we preliminarily investigated the electrical breakdown property, withstand strike current ability, and multiple-firing performance of the energetic initiators. The breakdown voltage of the Al/CuO Schottky junction was ~8 V; and electrical breakdown in the initiators occurred one by one rather than simultaneously. The withstand strike current ability of the initiator mainly depended on the heat capacity of its ceramic plug when the electrical stimulus is more than ~8 V, its breakdown voltage. The ceramic plug can absorb heat from the initiator chip, letting the initiator withstand a constant current of 0.5 A for 20 s. More importantly, the initiators might be able to withstand hard electromagnetic interference by coupling the multiple-firing performance with an out-of-line slider in the explosive train. This knowledge of the characteristics of Schottky-junction-based Al/CuO energetic initiators will help in preparing highly insensitive, efficient initiating explosive devices for weapon systems.

  14. Artificial Photosynthesis with Semiconductor-Liquid Junctions.

    PubMed

    Guijarro, Néstor; Formal, Florian Le; Sivula, Kevin

    2015-01-01

    Given the urgent need to develop a sustainable, carbon neutral energy storage system on a global scale, intense efforts are currently underway to advance the field of artificial photosynthesis: i.e. solar fuel engineering. In this review we give an overview of the field of artificial photosynthesis using a semiconductor-electrolyte interface employed in a photoelectrochemical device or as a heterogeneous photocatalyst. First we present a basic description of the operation principles of a semiconductor-liquid junction based device. The role of nanotechnology in the recent advances in the field is highlighted and common material systems under current study are briefly reviewed. The importance of the material surfaces are further scrutinized by presenting recent advances in interfacial engineering. Technical challenges and an outlook towards industrialization of the technology are given.

  15. Current rectification in a single molecule diode: the role of electrode coupling.

    PubMed

    Sherif, Siya; Rubio-Bollinger, Gabino; Pinilla-Cienfuegos, Elena; Coronado, Eugenio; Cuevas, Juan Carlos; Agraït, Nicolás

    2015-07-24

    We demonstrate large rectification ratios (> 100) in single-molecule junctions based on a metal-oxide cluster (polyoxometalate), using a scanning tunneling microscope (STM) both at ambient conditions and at low temperature. These rectification ratios are the largest ever observed in a single-molecule junction, and in addition these junctions sustain current densities larger than 10(5) A cm(-2). By following the variation of the I-V characteristics with tip-molecule separation we demonstrate unambiguously that rectification is due to asymmetric coupling to the electrodes of a molecule with an asymmetric level structure. This mechanism can be implemented in other type of molecular junctions using both organic and inorganic molecules and provides a simple strategy for the rational design of molecular diodes.

  16. Single Molecule Junctions: Probing Contact Chemistry and Fundamental Circuit Laws

    SciTech Connect

    Hybertsen M. S.

    2013-04-11

    By exploiting selective link chemistry, formation of single molecule junctions with reproducible conductance has become established. Systematic studies reveal the structure-conductance relationships for diverse molecules. I will draw on experiments from my collaborators at Columbia University, atomic-scale calculations and theory to describe progress in two areas. First, I will describe a novel route to form single molecule junctions, based on SnMe3 terminated molecules, in which gold directly bonds to carbon in the molecule backbone resulting in near ideal contact resistance [1]. Second, comparison of the conductance of junctions formed with molecular species containing either one backbone or two backbones in parallel allows demonstration of the role of quantum interference in the conductance superposition law at the molecular scale [2].

  17. Tunnel electroresistance through organic ferroelectrics

    PubMed Central

    Tian, B. B.; Wang, J. L.; Fusil, S.; Liu, Y.; Zhao, X. L.; Sun, S.; Shen, H.; Lin, T.; Sun, J. L.; Duan, C. G.; Bibes, M.; Barthélémy, A.; Dkhil, B.; Garcia, V.; Meng, X. J.; Chu, J. H.

    2016-01-01

    Organic electronics is emerging for large-area applications such as photovoltaic cells, rollable displays or electronic paper. Its future development and integration will require a simple, low-power organic memory, that can be written, erased and readout electrically. Here we demonstrate a non-volatile memory in which the ferroelectric polarisation state of an organic tunnel barrier encodes the stored information and sets the readout tunnel current. We use high-sensitivity piezoresponse force microscopy to show that films as thin as one or two layers of ferroelectric poly(vinylidene fluoride) remain switchable with low voltages. Submicron junctions based on these films display tunnel electroresistance reaching 1,000% at room temperature that is driven by ferroelectric switching and explained by electrostatic effects in a direct tunnelling regime. Our findings provide a path to develop low-cost, large-scale arrays of organic ferroelectric tunnel junctions on silicon or flexible substrates. PMID:27143121

  18. Enhancement of Spin-transfer torque switching via resonant tunneling

    SciTech Connect

    Chatterji, Niladri; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

    2014-12-08

    We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torque thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.

  19. Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.

    PubMed

    Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane; Boyn, Sören; Marinova, Maya; Gloter, Alexandre; Xavier, Stéphane; Grollier, Julie; Jacquet, Eric; Carrétéro, Cécile; Deranlot, Cyrile; Bibes, Manuel; Barthélémy, Agnès

    2013-06-25

    Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

  20. Raman scattering in molecular junctions: a pseudoparticle formulation.

    PubMed

    White, Alexander J; Tretiak, Sergei; Galperin, Michael

    2014-02-12

    We present a formulation of Raman spectroscopy in molecular junctions based on a many-body state representation of the molecule. The approach goes beyond the previous effective single orbital formalism and provides a convenient way to incorporate computational methods and tools proven for equilibrium molecular spectroscopy into the realm of current carrying junctions. The presented framework is illustrated by first principle simulations of Raman response in a three-ring oligophenylene vinylene terminating in amine functional groups (OPV3) junction. The calculated shift in Stokes lines and estimate of vibrational heating by electric current agree with available experimental data. In particular, our results suggest that participation of the OPV3 cation in Raman scattering under bias may be responsible for the observed shift, and that the direction of the shift depends on renormalization of normal modes. This work is a step toward atomistic quantum ab initio modeling of the optical response of nonequilibrium electronic dynamics in molecular junctions. PMID:24447295

  1. Tunneling spectroscopy into YBa[sub 2]Cu[sub 4]O[sub 8]: Intralayer and interlayer analysis

    SciTech Connect

    Cucolo, A.M.; Leo, R.D.; Romano, P. ); Dabrowski, B.; Hinks, D.G.; Radaelli, P.G. )

    1994-10-01

    We have measured the superconducting and normal tunneling characteristics of quality controlled planar junctions based on YBa[sub 2]Cu[sub 4]O[sub 8] (Y124) single crystals. Our data show that the in-plane properties are similar to the YBa[sub 2]Cu[sub 3]O[sub 7] (Y123) system. A higher value of the zero-bias conductance is measured in the Y124, indicating an increased number of normal electrons due to the presence of the double chain structure. Linearity of the background conductance is observed in both compounds. Less steep slopes are found in Y124 that might indicate a reduced interlayer coupling in this system.

  2. Measurement of Beta Particles Induced Electron-Hole Pairs Recombination in Depletion Region of GaAs PN Junction

    NASA Astrophysics Data System (ADS)

    Chen, Hai-Yang; Jiang, Lan; Li, Da-Rang

    2011-05-01

    PN junctions and schottky diodes are widely employed as electron-hole pair collectors in electron beam induced current (EBIC) techniques and betavoltaic batteries, in which the recombination in depletion regions is ignored. We measured the beta particles induced electron-hole pairs recombination in the depletion region of a GaAs P+PN+ junction, based on comparisons between measured short currents and ideal values. The results show that only 20% electron-hole pairs in the depletion can be collected, causing the short current. This indicates an electron-hole pair diffusion length of 0.2μm in the depletion region. Hence, it is necessary to evaluate the recombination in the EBIC techniques and betavoltaic design.

  3. Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure

    NASA Astrophysics Data System (ADS)

    Lu, Xing; Liu, Chao; Jiang, Huaxing; Zou, Xinbo; Zhang, Anping; Lau, Kei May

    2016-08-01

    In this letter, monolithic integration of InGaN/GaN light emitting diodes (LEDs) with vertical metal-oxide-semiconductor field effect transistor (VMOSFET) drivers have been proposed and demonstrated. The VMOSFET was achieved by simply regrowing a p- and n-GaN bilayer on top of a standard LED structure. After fabrication, the VMOSFET is connected with the LED through the conductive n-GaN layer, with no need of extra metal interconnections. The junction-based VMOSFET is inherently an enhancement-mode (E-mode) device with a threshold voltage of 1.6 V. By controlling the gate bias of the VMOSFET, the light intensity emitted from the integrated VMOSFET-LED device could be well modulated, which shows great potential for various applications, including solid-state lighting, micro-displays, and visible light communications.

  4. Modulation-mediated unlocking of a parametrically phase-locked spin torque oscillator

    SciTech Connect

    Dürrenfeld, P.; Iacocca, E.; Åkerman, J.; Muduli, P. K.

    2014-12-22

    Modulation of an oscillator is crucial for its application in communication devices. While the output power and linewidth of single magnetic tunnel junction-based spin-torque oscillators (MTJ-STO) are not yet adequate for practical uses, the synchronization of such devices can overcome these limitations. Here, we investigate the modulation behavior of a parametrically synchronized MTJ-STO and show experimentally that modulation of the synchronized state preserves synchronization as long as the modulation frequency, f{sub mod}, is above a characteristic frequency, f{sub unlock}. The unlocking frequency increases with the modulation amplitude in agreement with analytical estimates and numerical simulations. These phenomena are described as a non-resonant unlocking mechanism, whose characteristics are directly related to inherent parameters of the oscillator.

  5. Quantifying the relative molecular orbital alignment for molecular junctions with similar chemical linkage to electrodes.

    PubMed

    Bâldea, Ioan

    2014-11-14

    Estimating the relative alignment between the frontier molecular orbitals (MOs) that dominates the charge transport through single-molecule junctions represents a challenge for theory. This requires approaches beyond the widely employed framework provided by the density functional theory, wherein the Kohn-Sham 'orbitals' are treated as if they were real MOs, which is not the case. In this paper, we report results obtained by means of quantum chemical calculations, including the equation-of-motion coupled-cluster singles and doubles, which is the state-of-the-art of quantum chemistry for medium-size molecules like those considered here. These theoretical results are validated against data on the MO energy offset relative to the electrodes' Fermi energy extracted from experiments for junctions based on 4,4'-bipyridine and 1,4-dicyanobenzene.

  6. Direct observation of large quantum interference effect in anthraquinone solid-state junctions.

    PubMed

    Rabache, Vincent; Chaste, Julien; Petit, Philippe; Della Rocca, Maria Luisa; Martin, Pascal; Lacroix, Jean-Christophe; McCreery, Richard L; Lafarge, Philippe

    2013-07-17

    Quantum interference in cross-conjugated molecules embedded in solid-state devices was investigated by direct current-voltage and differential conductance transport measurements of anthraquinone (AQ)-based large area planar junctions. A thin film of AQ was grafted covalently on the junction base electrode by diazonium electroreduction, while the counter electrode was directly evaporated on top of the molecular layer. Our technique provides direct evidence of a large quantum interference effect in multiple CMOS compatible planar junctions. The quantum interference is manifested by a pronounced dip in the differential conductance close to zero voltage bias. The experimental signature is well developed at low temperature (4 K), showing a large amplitude dip with a minimum >2 orders of magnitude lower than the conductance at higher bias and is still clearly evident at room temperature. A temperature analysis of the conductance curves revealed that electron-phonon coupling is the principal decoherence mechanism causing large conductance oscillations at low temperature.

  7. All-carbon nanoswitch based on C70 molecule: A first principles study

    NASA Astrophysics Data System (ADS)

    OuYang, Fangping; Xu, Hui; Fan, Toujiao

    2007-09-01

    We have demonstrated the electron transport properties of an all-carbon molecular junction based on the C70 molecule connecting with two armchair single-wall carbon nanotubes using first principles transport calculations. It is shown that the Landauer conductance of this carbon hybrid system can be tuned within several orders of magnitude not only by changing the orientation of the C70 molecule but also by rotating one of the tubes around the symmetry axis of the system at fixed distances. This fact could make this pure-carbon molecular system a possible candidate for a nanoelectronic switching device. Moreover, we have also studied the nitrogen doping effect of such a molecular device. The results reveal that molecular configuration selection and nitrogen doping would play important roles in such switching devices.

  8. Skyrmion based microwave detectors and harvesting

    SciTech Connect

    Finocchio, G.; Giordano, A.; Ricci, M.; Burrascano, P.; Tomasello, R.; Lanuzza, M.; Puliafito, V.; Azzerboni, B.; Carpentieri, M.

    2015-12-28

    Magnetic skyrmions are topologically protected states that are very promising for the design of the next generation of ultra-low-power electronic devices. In this letter, we propose a magnetic tunnel junction based spin-transfer torque diode with a magnetic skyrmion as ground state and a perpendicular polarizer patterned as nano-contact for a local injection of the current. The key result is the possibility to achieve sensitivities (i.e., detection voltage over input microwave power) larger than 2000 V/W for optimized contact diameters. We also pointed out that large enough voltage controlled magnetocrystalline anisotropy could significantly improve the sensitivity. Our results can be very useful for the identification of a class of spin-torque diodes with a non-uniform ground state and to understand the fundamental physics of the skyrmion dynamical properties.

  9. Hybrid-free Josephson Parametric Converter

    NASA Astrophysics Data System (ADS)

    Frattini, N. E.; Narla, A.; Sliwa, K. M.; Shankar, S.; Hatridge, M.; Devoret, M. H.

    A necessary component for any quantum computation architecture is the ability to perform efficient quantum operations. In the microwave regime of superconducting qubits, these quantum-limited operations can be realized with a non-degenerate Josephson junction based three-wave mixer, the Josephson Parametric Converter (JPC). Currently, the quantum signal of interest must pass through a lossy 180 degree hybrid to be presented as a differential drive to the JPC. This hybrid therefore places a limit on the quantum efficiency of the system and also increases the device footprint. We present a new design for the JPC eliminating the need for any external hybrid. We also show that this design has nominally identical performance to the conventional JPC. Work supported by ARO, AFOSR and YINQE.

  10. Tunnel electroresistance through organic ferroelectrics

    NASA Astrophysics Data System (ADS)

    Tian, B. B.; Wang, J. L.; Fusil, S.; Liu, Y.; Zhao, X. L.; Sun, S.; Shen, H.; Lin, T.; Sun, J. L.; Duan, C. G.; Bibes, M.; Barthélémy, A.; Dkhil, B.; Garcia, V.; Meng, X. J.; Chu, J. H.

    2016-05-01

    Organic electronics is emerging for large-area applications such as photovoltaic cells, rollable displays or electronic paper. Its future development and integration will require a simple, low-power organic memory, that can be written, erased and readout electrically. Here we demonstrate a non-volatile memory in which the ferroelectric polarisation state of an organic tunnel barrier encodes the stored information and sets the readout tunnel current. We use high-sensitivity piezoresponse force microscopy to show that films as thin as one or two layers of ferroelectric poly(vinylidene fluoride) remain switchable with low voltages. Submicron junctions based on these films display tunnel electroresistance reaching 1,000% at room temperature that is driven by ferroelectric switching and explained by electrostatic effects in a direct tunnelling regime. Our findings provide a path to develop low-cost, large-scale arrays of organic ferroelectric tunnel junctions on silicon or flexible substrates.

  11. The interplay between the Aharonov-Bohm interference and parity selective tunneling in graphene nanoribbon rings.

    PubMed

    Nguyen, V Hung; Niquet, Y-M; Dollfus, P

    2014-05-21

    We report on a numerical study of the Aharonov-Bohm (AB) effect and parity selective tunneling in pn junctions based on rectangular graphene rings where the contacts and ring arms are all made of zigzag nanoribbons. We find that when applying a magnetic field to the ring, the AB interference can reverse the parity symmetry of incoming waves and hence can strongly modulate the parity selective transmission through the system. Therefore, the transmission between two states of different parity exhibits the AB oscillations with a π-phase shift, compared to the case of states of the same parity. On this basis, it is shown that interesting effects, such as giant (both positive and negative) magnetoresistance and strong negative differential conductance, can be achieved in this structure. Our study thus presents a new property of the AB interference in graphene nanorings, which could be helpful for further understanding the transport properties of graphene mesoscopic systems. PMID:24785639

  12. Linear pi-conjugated systems derivatized with C60-fullerene as molecular heterojunctions for organic photovoltaics.

    PubMed

    Roncali, Jean

    2005-06-01

    This tutorial review covers recent contributions in the area of linear pi-conjugated systems bound to fullerenes in view of their application as active materials in photovoltaic devices. The first part discusses the concepts of double-cable polymer and molecular hetero-junction and presents several examples of chemically or electrochemically synthesized C60-derivatized conjugated polymers. The second and main part of the article concerns the various classes of C60-derivatized pi-conjugated oligomers designed in view of their utilization in single-component photovoltaic devices. Thus, C60-containing pi-conjugated systems such as oligoarylenevinylenes, oligoaryleneethynylenes and oligothiophenes are discussed on the basis of the relationships between molecular structure, photophysical properties and performances of the derived photovoltaic devices. A brief last section presents some recent examples of surface-attached molecular hetero-junctions based on self-assembled monolayers and discusses possible routes for future research.

  13. Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

    DOEpatents

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2012-07-31

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  14. Dilute group III-V nitride intermediate band solar cells with contact blocking layers

    DOEpatents

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2015-02-24

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  15. Experimental study of resistive bistability in metal oxide junctions

    NASA Astrophysics Data System (ADS)

    Tan, Zhongkui; Patel, Vijay; Likharev, Konstantin K.; Su, Dong; Zhu, Yimei

    2011-05-01

    We have studied resistive bistability (memory) effects in junctions based on metal oxides, with a focus on sample-to-sample reproducibility, which is necessary for the use of such junctions as crosspoint devices of hybrid CMOS/nanoelectronic circuits. Few-nm-thick layers of NbO x , CuO x and TiO x have been formed by thermal and plasma oxidation, at various deposition and oxidation conditions, both with and without rapid thermal post-annealing. The resistive bistability effect has been observed for all these materials, with particularly high endurance (over 103 switching cycles) obtained for single-layer TiO2 junctions, and the best reproducibility reached for multi-layer junctions of the same material. Fabrication optimization has allowed us to improve the OFF/ON resistance ratio to about 103, but the sample-to-sample reproducibility is so far lower than that required for large-scale integration.

  16. Multiple Resonators as a Multi-Channel Bus for Coupling Josephson Junction Qubits

    NASA Astrophysics Data System (ADS)

    Thrailkill, Zechariah; Lambert, Joseph; Ramos, Roberto

    2010-03-01

    Josephson junction-based qubits have been shown to be promising components for a future quantum computer. A network of these superconducting qubits will require quantum information to be stored in and transferred among them. Resonators made of superconducting metal strips are useful elements for this purpose because they have long coherence times and can dispersively couple qubits. We explore the use of multiple resonators with different resonant frequencies to couple qubits. We find that an array of resonators with different frequencies can be individually addressed to store and retrieve information, while coupling qubits dispersively. We show that a control qubit can be used to effectively isolate an active qubit from an array of resonators so that it can function within the same frequency range used by the resonators.

  17. Nanowires improved charge separation and light utilization in metal-oxide solar cells

    NASA Astrophysics Data System (ADS)

    Cheng, Wei-Yun; Lin, Yi-Feng; Lu, Shih-Yuan

    2011-08-01

    The power conversion efficiencies of electrodeposited Cu2O/ZnO p-n junction based solar cells are significantly improved by sandwiching a layer of spin-coated CdS nanowires (NWs) in between the electrochemically deposited Cu2O and ZnO layers. With the inclusion of the CdS NWs, there is observed a 5 fold improvement in the conversion efficiency, from 0.12% to 0.6%, as compared with that of the plain Cu2O/ZnO cell. The improvement is attributed to the enlarged p-n interface area and enhanced light harvesting, charge separation, and electron transport made possible by incorporating the single crystalline, relatively low band gap CdS NWs.

  18. Theoretical Study of Midwave Infrared HgCdTe nBn Detectors Operating at Elevated Temperatures

    NASA Astrophysics Data System (ADS)

    Akhavan, Nima Dehdashti; Jolley, Gregory; Umana-Membreno, Gilberto A.; Antoszewski, Jarek; Faraone, Lorenzo

    2015-09-01

    We report a theoretical study of mercury cadmium telluride (HgCdTe) unipolar n-type/barrier/ n-type (nBn) detectors for midwave infrared (MWIR) applications at elevated temperatures. The results obtained indicate that the composition, doping, and thickness of the barrier layer in MWIR HgCdTe nBn detectors can be optimized to yield performance levels comparable with those of ideal HgCdTe p- n photodiodes. It is also shown that introduction of an additional barrier at the back contact layer of the detector structure (nBnn+) leads to substantial suppression of the Auger generation-recombination (GR) mechanism; this results in an order-of-magnitude reduction in the dark current level compared with conventional nBn or p- n junction-based detectors, thus enabling background-limited detector operation above 200 K.

  19. Electrodeposited CulnSe2 Thin Film Junctions

    NASA Technical Reports Server (NTRS)

    Raffaelle, R. P.; Mantovani, J. G.; Bailey, S. G.; Hepp, A. F.; Gordon, E. M.; Haraway, R.

    1998-01-01

    We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

  20. Electrodeposited CuInSe2 Thin Film Junctions

    NASA Technical Reports Server (NTRS)

    Raffaelle, R. P.; Mantovani, J. G.; Bailey, S. G.; Hepp, A. F.; Gordon, E. M.; Haraway, R.

    1997-01-01

    We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

  1. The physics and backward diode behavior of heavily doped single layer MoS2 based p-n junctions

    NASA Astrophysics Data System (ADS)

    Sun, Qing-Qing; Li, Yong-Jun; He, Jin-Lan; Yang, Wen; Zhou, Peng; Lu, Hong-Liang; Ding, Shi-Jing; Wei Zhang, David

    2013-03-01

    The single layer MoS2 is attractive for the use in the next-generation low power nanoelectronic devices because of its intrinsic bandgap compared to graphene. In this work, we investigated the transport property of a p-n junction based on two-dimensional MoS2. The n-type and p-type doping are realized through substituting sulfur with chlorine and phosphorus. The device exhibited backward diode-like behavior with large rectifying ratios. We attribute the observed current-voltage characteristics to different heavy doping effect caused by chlorine and phosphorus. Our results may throw light on the electronic modulation of MoS2 and realizations of complemented logics devices based on MoS2.

  2. Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting

    NASA Astrophysics Data System (ADS)

    Xiyuan, Wang; Yongguang, Huang; Dewei, Liu; Xiaoning, Zhu; Xiao, Cui; Hongliang, Zhu

    2013-06-01

    Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting (PLM). P type silicon wafers were implanted with 245 keV 126Te+ to a dose of 2 × 1015 ions/cm2, after a PLM process (248 nm, laser fluence of 0.30 and 0.35 J/cm2, 1-5 pulses, duration 30 ns), an n+ type single crystalline tellurium supersaturated silicon layer with high carrier density (highest concentration 4.10 × 1019 cm-3, three orders of magnitude larger than the solid solution limit) was formed, it shows high broadband optical absorption from 400 to 2500 nm. Current—voltage measurements were performed on these diodes under dark and one standard sun (AM 1.5), and good rectification characteristics were observed. For present results, the samples with 4-5 pulses PLM are best.

  3. Tunnel electroresistance through organic ferroelectrics.

    PubMed

    Tian, B B; Wang, J L; Fusil, S; Liu, Y; Zhao, X L; Sun, S; Shen, H; Lin, T; Sun, J L; Duan, C G; Bibes, M; Barthélémy, A; Dkhil, B; Garcia, V; Meng, X J; Chu, J H

    2016-01-01

    Organic electronics is emerging for large-area applications such as photovoltaic cells, rollable displays or electronic paper. Its future development and integration will require a simple, low-power organic memory, that can be written, erased and readout electrically. Here we demonstrate a non-volatile memory in which the ferroelectric polarisation state of an organic tunnel barrier encodes the stored information and sets the readout tunnel current. We use high-sensitivity piezoresponse force microscopy to show that films as thin as one or two layers of ferroelectric poly(vinylidene fluoride) remain switchable with low voltages. Submicron junctions based on these films display tunnel electroresistance reaching 1,000% at room temperature that is driven by ferroelectric switching and explained by electrostatic effects in a direct tunnelling regime. Our findings provide a path to develop low-cost, large-scale arrays of organic ferroelectric tunnel junctions on silicon or flexible substrates. PMID:27143121

  4. Josephson ϕ0-junction in nanowire quantum dots

    NASA Astrophysics Data System (ADS)

    Szombati, D. B.; Nadj-Perge, S.; Car, D.; Plissard, S. R.; Bakkers, E. P. A. M.; Kouwenhoven, L. P.

    2016-06-01

    The Josephson effect describes supercurrent flowing through a junction connecting two superconducting leads by a thin barrier. This current is driven by a superconducting phase difference ϕ between the leads. In the presence of chiral and time-reversal symmetry of the Cooper pair tunnelling process, the current is strictly zero when ϕ vanishes. Only if these underlying symmetries are broken can the supercurrent for ϕ = 0 be finite. This corresponds to a ground state of the junction being offset by a phase ϕ0, different from 0 or π. Here, we report such a Josephson ϕ0-junction based on a nanowire quantum dot. We use a quantum interferometer device to investigate phase offsets and demonstrate that ϕ0 can be controlled by electrostatic gating. Our results may have far-reaching implications for superconducting flux- and phase-defined quantum bits as well as for exploring topological superconductivity in quantum dot systems.

  5. Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

    PubMed Central

    Yau, H. M.; Yan, Z. B.; Chan, N. Y.; Au, K.; Wong, C. M.; Leung, C. W.; Zhang, F.Y.; Gao, X. S.; Dai, J. Y.

    2015-01-01

    Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure. PMID:26239505

  6. Electrostatically tunable lateral MoTe2 p-n junction for use in high-performance optoelectronics

    NASA Astrophysics Data System (ADS)

    Wang, Zhenxing; Wang, Feng; Yin, Lei; Huang, Yun; Xu, Kai; Wang, Fengmei; Zhan, Xueying; He, Jun

    2016-07-01

    Because of their ultimate thickness, layered structure and high flexibility, pn junctions based on layered two-dimensional semiconductors have been attracting increasing attention recently. In this study, for the first time, we fabricated lateral pn junctions (LPNJs) based on ultrathin MoTe2 by introducing two separated electrostatic back gates, and investigated their electronic and photovoltaic performance. Pn, np, nn, and pp junctions can be easily realized by modulating the conductive channel type using gate voltages with different polarities. Strong rectification effects were observed in the pn and np junctions and the rectification ratio reached ~5 × 104. Importantly, we find a unique phenomenon that the parameters for MoTe2 LPNJs experience abrupt changes during the transition from p to n or n to p. Furthermore, a high performance photovoltaic device with a filling factor of above 51% and electrical conversion efficiency (η) of around 0.5% is achieved. Our findings are of importance to comprehensively understand the electronic and optoelectronic properties of MoTe2 and may further open up novel electronic and optoelectronic device applications.Because of their ultimate thickness, layered structure and high flexibility, pn junctions based on layered two-dimensional semiconductors have been attracting increasing attention recently. In this study, for the first time, we fabricated lateral pn junctions (LPNJs) based on ultrathin MoTe2 by introducing two separated electrostatic back gates, and investigated their electronic and photovoltaic performance. Pn, np, nn, and pp junctions can be easily realized by modulating the conductive channel type using gate voltages with different polarities. Strong rectification effects were observed in the pn and np junctions and the rectification ratio reached ~5 × 104. Importantly, we find a unique phenomenon that the parameters for MoTe2 LPNJs experience abrupt changes during the transition from p to n or n to p. Furthermore

  7. Electrochemical metallization switching with a platinum group metal in different oxides

    NASA Astrophysics Data System (ADS)

    Wang, Zhongrui; Jiang, Hao; Hyung Jang, Moon; Lin, Peng; Ribbe, Alexander; Xia, Qiangfei; Yang, J. Joshua

    2016-07-01

    In a normal electrochemical metallization (ECM) switch, electrochemically active metals, such as Ag and Cu are used to provide mobile ions for the conducting filament. In both ECM and valence change memory (VCM) devices, platinum group metals, such as Pt and Pd, are typically used as the counter electrode and assumed to be chemically and physically inert. In this study, we explore whether the so-called inert metal itself can form a conducting filament and result in repeatable resistance switching. Pd and different oxide host matrices are used for this purpose. We have observed that the transport of oxygen anions dominates over Pd metal cations in ALD deposited AlOx and HfOx. However, in sputtered SiOx, Pd cation transport was revealed, accompanied by the formation of nano-crystalline Pd filament(s) in the junctions. Based on these observations, memristors with reversible and repeatable switching were obtained by using Pd doped SiOx as the switching material.In a normal electrochemical metallization (ECM) switch, electrochemically active metals, such as Ag and Cu are used to provide mobile ions for the conducting filament. In both ECM and valence change memory (VCM) devices, platinum group metals, such as Pt and Pd, are typically used as the counter electrode and assumed to be chemically and physically inert. In this study, we explore whether the so-called inert metal itself can form a conducting filament and result in repeatable resistance switching. Pd and different oxide host matrices are used for this purpose. We have observed that the transport of oxygen anions dominates over Pd metal cations in ALD deposited AlOx and HfOx. However, in sputtered SiOx, Pd cation transport was revealed, accompanied by the formation of nano-crystalline Pd filament(s) in the junctions. Based on these observations, memristors with reversible and repeatable switching were obtained by using Pd doped SiOx as the switching material. Electronic supplementary information (ESI) available

  8. Thermoelectricity at the molecular scale: a large Seebeck effect in endohedral metallofullerenes

    NASA Astrophysics Data System (ADS)

    Lee, See Kei; Buerkle, Marius; Yamada, Ryo; Asai, Yoshihiro; Tada, Hirokazu

    2015-12-01

    Single molecule devices provide a unique system to study the thermoelectric energy conversion at an atomistic level and can provide valuable information for the design of organic thermoelectric materials. Here we present a comprehensive study of the thermoelectric transport properties of molecular junctions based on C82, Gd@C82, and Ce@C82. We combine precise scanning tunneling microscope break-junction measurements of the thermopower and conductance with quantitatively accurate self-energy-corrected first-principles transport calculations. We find that all three fullerene derivatives give rise to a negative thermopower (n-conducting). The absolute value, however, is much larger for the Gd@C82 and Ce@C82 junctions. The conductance, on the other hand, remains comparable for all three systems. The power factor determined for the Gd@C82 based junction is so far the highest obtained for a single-molecule device. Although the encapsulated metal atom does not directly contribute to the transport, we show that the observed enhancement of the thermopower for Gd@C82 and Ce@C82 is elucidated by the substantial changes in the electronic- and geometrical structure of the fullerene molecule induced by the encapsulated metal atom.Single molecule devices provide a unique system to study the thermoelectric energy conversion at an atomistic level and can provide valuable information for the design of organic thermoelectric materials. Here we present a comprehensive study of the thermoelectric transport properties of molecular junctions based on C82, Gd@C82, and Ce@C82. We combine precise scanning tunneling microscope break-junction measurements of the thermopower and conductance with quantitatively accurate self-energy-corrected first-principles transport calculations. We find that all three fullerene derivatives give rise to a negative thermopower (n-conducting). The absolute value, however, is much larger for the Gd@C82 and Ce@C82 junctions. The conductance, on the other hand

  9. A molecular half-wave rectifier.

    PubMed

    Nijhuis, Christian A; Reus, William F; Siegel, Adam C; Whitesides, George M

    2011-10-01

    This paper describes the performance of junctions based on self-assembled monolayers (SAMs) as the functional element of a half-wave rectifier (a simple circuit that converts, or rectifies, an alternating current (AC) signal to a direct current (DC) signal). Junctions with SAMs of 11-(ferrocenyl)-1-undecanethiol or 11-(biferrocenyl)-1-undecanethiol on ultraflat, template-stripped Ag (Ag(TS)) bottom electrodes, and contacted by top electrodes of eutectic indium-gallium (EGaIn), rectified AC signals, while similar junctions based on SAMs of 1-undecanethiol-SAMs lacking the ferrocenyl terminal group-did not. SAMs in these AC circuits (operating at 50 Hz) remain stable over a larger window of applied bias than in DC circuits. AC measurements, therefore, can investigate charge transport in SAM-based junctions at magnitudes of bias inaccessible to DC measurements. For junctions with SAMs of alkanethiols, combining the results from AC and DC measurements identifies two regimes of bias with different mechanisms of charge transport: (i) low bias (|V| < 1.3 V), at which direct tunneling dominates, and (ii) high bias (|V| > 1.3 V), at which Fowler-Nordheim (FN) tunneling dominates. For junctions with SAMs terminated by Fc moieties, the transition to FN tunneling occurs at |V| ≈ 2.0 V. Furthermore, at sufficient forward bias (V > 0.5 V), hopping makes a significant contribution to charge transport and occurs in series with direct tunneling (V ≲ 2.0 V) until FN tunneling activates (V ≳ 2.0 V). Thus, for Fc-terminated SAMs at forward bias, three regimes are apparent: (i) direct tunneling (V = 0-0.5 V), (ii) hopping plus direct tunneling (V ≈ 0.5-2.0 V), and (iii) FN tunneling (V ≳ 2.0 V). Since hopping does not occur at reverse bias, only two regimes are present over the measured range of reverse bias. This difference in the mechanisms of charge transport at forward and reverse bias for junctions with Fc moieties resulted in large rectification ratios (R > 100) and

  10. Lateral graphene p-n junctions formed by the graphene/MoS2 hybrid interface

    NASA Astrophysics Data System (ADS)

    Meng, Jie; Song, Hua-Ding; Li, Cai-Zhen; Jin, Yibo; Tang, Lei; Liu, Dameng; Liao, Zhi-Min; Xiu, Faxian; Yu, Da-Peng

    2015-07-01

    Graphene/two-dimensional (2D) semiconductor heterostructures have been demonstrated to possess many advantages for electronic and optoelectronic devices. However, there are few reports about the utilization of a 2D semiconductor monolayer to tune the properties of graphene. Here, we report the fabrication and characterization of graphene p-n junctions based on graphene/MoS2 hybrid interfaces. Monolayered graphene across the monolayered MoS2 boundary is divided into n-type regions on the MoS2 and p-type regions on the SiO2 substrate. Such van der Waals heterostructure based graphene p-n junctions show good photoelectric properties. The photocurrent modulation of such devices by a single back gate is also demonstrated for the first time, which shows that the graphene on and off MoS2 regions have different responses to the gate voltage. Our results suggest that the atomic thin hybrid structure can remarkably extend the device applications.Graphene/two-dimensional (2D) semiconductor heterostructures have been demonstrated to possess many advantages for electronic and optoelectronic devices. However, there are few reports about the utilization of a 2D semiconductor monolayer to tune the properties of graphene. Here, we report the fabrication and characterization of graphene p-n junctions based on graphene/MoS2 hybrid interfaces. Monolayered graphene across the monolayered MoS2 boundary is divided into n-type regions on the MoS2 and p-type regions on the SiO2 substrate. Such van der Waals heterostructure based graphene p-n junctions show good photoelectric properties. The photocurrent modulation of such devices by a single back gate is also demonstrated for the first time, which shows that the graphene on and off MoS2 regions have different responses to the gate voltage. Our results suggest that the atomic thin hybrid structure can remarkably extend the device applications. Electronic supplementary information (ESI) available: More details on device fabrication, control

  11. Physical model of the contact resistivity of metal-graphene junctions

    SciTech Connect

    Chaves, Ferney A. Jiménez, David; Cummings, Aron W.; Roche, Stephan

    2014-04-28

    While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. One of the most important factors in determining the resistance of a metal-graphene junction is the contact resistivity. Despite the large number of experimental works that exist in the literature measuring the contact resistivity, a simple model of it is still lacking. In this paper, we present a comprehensive physical model for the contact resistivity of these junctions, based on the Bardeen Transfer Hamiltonian method. This model unveils the role played by different electrical and physical parameters in determining the specific contact resistivity, such as the chemical potential of interaction, the work metal-graphene function difference, and the insulator thickness between the metal and graphene. In addition, our model reveals that the contact resistivity is strongly dependent on the bias voltage across the metal-graphene junction. This model is applicable to a wide variety of graphene-based electronic devices and thus is useful for understanding how to optimize the contact resistance in these systems.

  12. Thermoelectricity at the molecular scale: a large Seebeck effect in endohedral metallofullerenes.

    PubMed

    Lee, See Kei; Buerkle, Marius; Yamada, Ryo; Asai, Yoshihiro; Tada, Hirokazu

    2015-12-28

    Single molecule devices provide a unique system to study the thermoelectric energy conversion at an atomistic level and can provide valuable information for the design of organic thermoelectric materials. Here we present a comprehensive study of the thermoelectric transport properties of molecular junctions based on C(82), Gd@C(82), and Ce@C(82). We combine precise scanning tunneling microscope break-junction measurements of the thermopower and conductance with quantitatively accurate self-energy-corrected first-principles transport calculations. We find that all three fullerene derivatives give rise to a negative thermopower (n-conducting). The absolute value, however, is much larger for the Gd@C(82) and Ce@C(82) junctions. The conductance, on the other hand, remains comparable for all three systems. The power factor determined for the Gd@C(82) based junction is so far the highest obtained for a single-molecule device. Although the encapsulated metal atom does not directly contribute to the transport, we show that the observed enhancement of the thermopower for Gd@C(82) and Ce@C(82) is elucidated by the substantial changes in the electronic- and geometrical structure of the fullerene molecule induced by the encapsulated metal atom. PMID:26583505

  13. Hybrid pn-junction solar cells based on layers of inorganic nanocrystals and organic semiconductors: optimization of layer thickness by considering the width of the depletion region.

    PubMed

    Saha, Sudip K; Guchhait, Asim; Pal, Amlan J

    2014-03-01

    We report the formation and characterization of hybrid pn-junction solar cells based on a layer of copper diffused silver indium disulfide (AgInS2@Cu) nanoparticles and another layer of copper phthalocyanine (CuPc) molecules. With copper diffusion in the nanocrystals, their optical absorption and hence the activity of the hybrid pn-junction solar cells was extended towards the near-IR region. To decrease the particle-to-particle separation for improved carrier transport through the inorganic layer, we replaced the long-chain ligands of copper-diffused nanocrystals in each monolayer with short-ones. Under illumination, the hybrid pn-junctions yielded a higher short-circuit current as compared to the combined contribution of the Schottky junctions based on the components. A wider depletion region at the interface between the two active layers in the pn-junction device as compared to that of the Schottky junctions has been considered to analyze the results. Capacitance-voltage characteristics under a dark condition supported such a hypothesis. We also determined the width of the depletion region in the two layers separately so that a pn-junction could be formed with a tailored thickness of the two materials. Such a "fully-depleted" device resulted in an improved photovoltaic performance, primarily due to lessening of the internal resistance of the hybrid pn-junction solar cells.

  14. Biological Derived Nanomotors in a ``Domino Fashion''

    NASA Astrophysics Data System (ADS)

    Maksoed, W. H.

    2015-11-01

    For disproportionation of H2 O2 , we also considers an electrokinetic mechanism they appear.So far, the more efficient micro/nanoscale motors are derived from biological systems [2003]. Besides, a control experimenting using 3 stripped Au/Pt/Au rods with catalyzed the composition of H2 O2 , at a similar rate-Walter F Paxton: ``Catalytic Nanomotors,'' JACS, 2004. We also intended to accomaplishes the HCCI quotes from Marcin Frackowiak, dissertation, 2009, just in several characters seems as twin of IGNITION through IceCube document project held since Oct 11, 2001 ever concludes as ``saw none'' so they can be follows the ITER/IFMIF. Refers to S29286 file in UI retrieved: ``magnetic quantum-dot cellular automata which is nonvolatile & lower power consist of nanomagnets. Since they are magnetically coupled, logic can be performed by switching, on the other hand in a DOMINO fashion..'' [A. Klenm: ``Fabrication of Magnetic Tunnel Junction-based Spintronic Devices..,'' convocation, Aug 11-14, 2010]. Acknowledgments devotes to BB Mandelbrot: ``Fractal Geometry: What is it & What Does it do?''.

  15. Resolving metal-molecule interfaces at single-molecule junctions

    PubMed Central

    Komoto, Yuki; Fujii, Shintaro; Nakamura, Hisao; Tada, Tomofumi; Nishino, Tomoaki; Kiguchi, Manabu

    2016-01-01

    Electronic and structural detail at the electrode-molecule interface have a significant influence on charge transport across molecular junctions. Despite the decisive role of the metal-molecule interface, a complete electronic and structural characterization of the interface remains a challenge. This is in no small part due to current experimental limitations. Here, we present a comprehensive approach to obtain a detailed description of the metal-molecule interface in single-molecule junctions, based on current-voltage (I-V) measurements. Contrary to conventional conductance studies, this I-V approach provides a correlated statistical description of both, the degree of electronic coupling across the metal-molecule interface, and the energy alignment between the conduction orbital and the Fermi level of the electrode. This exhaustive statistical approach was employed to study single-molecule junctions of 1,4-benzenediamine (BDA), 1,4-butanediamine (C4DA), and 1,4-benzenedithiol (BDT). A single interfacial configuration was observed for both BDA and C4DA junctions, while three different interfacial arrangements were resolved for BDT. This multiplicity is due to different molecular adsorption sites on the Au surface namely on-top, hollow, and bridge. Furthermore, C4DA junctions present a fluctuating I-V curve arising from the greater conformational freedom of the saturated alkyl chain, in sharp contrast with the rigid aromatic backbone of both BDA and BDT. PMID:27221947

  16. Spin-Orbit Coupling in Hybrid Semiconductor Structures: From Majorana Fermions to Topological Insulators

    NASA Astrophysics Data System (ADS)

    Scharf, Benedikt

    Hybrid semiconductor structures with strong spin-orbit coupling are responsible for many fascinating phenomena. Topological states in systems of reduced dimensionality, in particular, offer many intriguing possibilities, both for fundamental research as well as for potential applications. In this talk, we describe the importance of the interplay of spin-orbit coupling (SOC) and the sample geometry in realizing exotic Majorana fermions (MFs) in quantum dots and rings and discuss several schemes to detect MFs. An effective SOC from the magnetic textures provided by magnetic tunnel junctions could enable a versatile control of MFs and their adiabatic exchange. We show that in 2D topological insulators (TIs), such as inverted HgTe/CdTe QWs, helical quantum spin Hall (QSH) states persist even at finite magnetic fields below a critical magnetic field above which only quantum Hall (QH) states can be found. We propose magneto-optical absorption measurements to probe the magnetic-field induced transition between the QSH and QH regimes. This measurement scheme is robust against perturbations such as additional SOC due to bulk or structure-inversion asymmetry. Finally, tunnel junctions based on the surfaces of 3D TIs are presented. These junctions can exhibit giant tunneling anomalous Hall (TAH) currents and negative differential TAH conductance, which makes them an attractive and versatile system for spintronic applications.

  17. Transport properties of the H2O@C60-dimer-based junction

    NASA Astrophysics Data System (ADS)

    Zhu, Chengbo; Wang, Xiaolin

    2015-09-01

    Theoretical predictions play an important role in finding potential applications in molecular electronics. Fullerenes have a number of potential applications, and the charge flow from a single C60 molecule to another becomes more versatile and more interesting after doping. Here, we report the conductance of two H2O@C60 molecules in series order and how the number of encapsulated water molecules influences the transport properties of the junction. Encapsulating an H2O molecule into one of the C60 cages increases the conductance of the dimer. Negative differential resistance is found in the dimer systems, and its peak-to-valley current ratio depends on the number of encapsulated H2O molecules. The conductance of the C60 dimer and the H2O@C60 dimer is two orders of magnitude smaller than that of the C60 monomer. Furthermore, we demonstrate that the conductance of the molecular junctions based on the H2O@C60 dimer can be tuned by moving the encapsulated H2O molecules. The conductance is H2O-position dependent. Our findings indicate that H2O@C60 can be used as a building block in C60-based molecular electronic devices and sensors.

  18. Thermoelectricity at the molecular scale: a large Seebeck effect in endohedral metallofullerenes.

    PubMed

    Lee, See Kei; Buerkle, Marius; Yamada, Ryo; Asai, Yoshihiro; Tada, Hirokazu

    2015-12-28

    Single molecule devices provide a unique system to study the thermoelectric energy conversion at an atomistic level and can provide valuable information for the design of organic thermoelectric materials. Here we present a comprehensive study of the thermoelectric transport properties of molecular junctions based on C(82), Gd@C(82), and Ce@C(82). We combine precise scanning tunneling microscope break-junction measurements of the thermopower and conductance with quantitatively accurate self-energy-corrected first-principles transport calculations. We find that all three fullerene derivatives give rise to a negative thermopower (n-conducting). The absolute value, however, is much larger for the Gd@C(82) and Ce@C(82) junctions. The conductance, on the other hand, remains comparable for all three systems. The power factor determined for the Gd@C(82) based junction is so far the highest obtained for a single-molecule device. Although the encapsulated metal atom does not directly contribute to the transport, we show that the observed enhancement of the thermopower for Gd@C(82) and Ce@C(82) is elucidated by the substantial changes in the electronic- and geometrical structure of the fullerene molecule induced by the encapsulated metal atom.

  19. Photoelectrochemical oxidation of ibuprofen via Cu2O-doped TiO2 nanotube arrays.

    PubMed

    Sun, Qiannan; Peng, Yen-Ping; Chen, Hanlin; Chang, Ken-Lin; Qiu, Yang-Neng; Lai, Shiau-Wu

    2016-12-01

    A p-n junction based Cu2O-doped TiO2 nanotube arrays (Cu2O-TNAs) were synthesized and used as a working anode in a photoelectrochemical (PEC) system. The results revealed that the Cu2O-TNAs were dominated by the anatase phase and responded significantly to visible light. XPS analyses indicated that with an amount of 24.79% Cu doping into the structure, the band gap of Cu2O-TNAs was greatly reduced. SEM images revealed that the supported TiO2 nanotubes had diameters of approximately 80nm and lengths of about 2.63μm. Upon doping with Cu2O, the TiO2 nanotubes maintained their structural integrity, exhibiting no significant morphological change, favoring PEC applications. Under illumination, the photocurrent from Cu2O/TNAs was 2.4 times larger than that from TNAs, implying that doping with Cu2O significantly improved electron mobility by reducing the rate of recombination of electron-hole pairs. The EIS and Bode plot revealed that the estimated electron lifetimes, τel, of TNAs and Cu2O/TNAs were 6.91 and 26.26ms, respectively. The efficiencies of degradation of Ibuprofen by photoelectrochemical, photocatalytic (PC), electrochemical (EC) and photolytic (P) methods were measured. PMID:27021261

  20. Electrostatically tunable lateral MoTe2 p-n junction for use in high-performance optoelectronics.

    PubMed

    Wang, Zhenxing; Wang, Feng; Yin, Lei; Huang, Yun; Xu, Kai; Wang, Fengmei; Zhan, Xueying; He, Jun

    2016-07-21

    Because of their ultimate thickness, layered structure and high flexibility, pn junctions based on layered two-dimensional semiconductors have been attracting increasing attention recently. In this study, for the first time, we fabricated lateral pn junctions (LPNJs) based on ultrathin MoTe2 by introducing two separated electrostatic back gates, and investigated their electronic and photovoltaic performance. Pn, np, nn, and pp junctions can be easily realized by modulating the conductive channel type using gate voltages with different polarities. Strong rectification effects were observed in the pn and np junctions and the rectification ratio reached ∼5 × 10(4). Importantly, we find a unique phenomenon that the parameters for MoTe2 LPNJs experience abrupt changes during the transition from p to n or n to p. Furthermore, a high performance photovoltaic device with a filling factor of above 51% and electrical conversion efficiency (η) of around 0.5% is achieved. Our findings are of importance to comprehensively understand the electronic and optoelectronic properties of MoTe2 and may further open up novel electronic and optoelectronic device applications. PMID:27335271

  1. Correlation of anomalous write error rates and ferromagnetic resonance spectrum in spin-transfer-torque-magnetic-random-access-memory devices containing in-plane free layers

    SciTech Connect

    Evarts, Eric R.; Rippard, William H.; Pufall, Matthew R.; Heindl, Ranko

    2014-05-26

    In a small fraction of magnetic-tunnel-junction-based magnetic random-access memory devices with in-plane free layers, the write-error rates (WERs) are higher than expected on the basis of the macrospin or quasi-uniform magnetization reversal models. In devices with increased WERs, the product of effective resistance and area, tunneling magnetoresistance, and coercivity do not deviate from typical device properties. However, the field-swept, spin-torque, ferromagnetic resonance (FS-ST-FMR) spectra with an applied DC bias current deviate significantly for such devices. With a DC bias of 300 mV (producing 9.9 × 10{sup 6} A/cm{sup 2}) or greater, these anomalous devices show an increase in the fraction of the power present in FS-ST-FMR modes corresponding to higher-order excitations of the free-layer magnetization. As much as 70% of the power is contained in higher-order modes compared to ≈20% in typical devices. Additionally, a shift in the uniform-mode resonant field that is correlated with the magnitude of the WER anomaly is detected at DC biases greater than 300 mV. These differences in the anomalous devices indicate a change in the micromagnetic resonant mode structure at high applied bias.

  2. Exploring tight junction alteration using double fluorescent probe combination of lanthanide complex with gold nanoclusters

    PubMed Central

    Wang, Xinyi; Wang, Na; Yuan, Lan; Li, Na; Wang, Junxia; Yang, Xiaoda

    2016-01-01

    Tight junctions play a key role in restricting or regulating passage of liquids, ions and large solutes through various biological barriers by the paracellular route. Changes in paracellular permeation indicate alteration of the tight junction. However, it is very difficult to obtain the structural change information by measuring paracellular flux based on transepithelial electrical resistance or using fluorescein-labeled dextrans. Here we show that the BSA and GSH stabilized gold nanoclusters exhibit marginal cytotoxicity and pass through the MDCK monolayer exclusively through the paracellular pathway. We propose a double fluorescence probe strategy, the combination of a proven paracellular indicator (europium complex) with fluorescent gold nanoclusters. We calculate changes of structural parameters in tight junctions based on determination of the diffusion coefficients of the probes. Two different types of tight junction openers are used to validate our strategy. Results show that EDTA disrupts tight junction structures and induces large and smooth paracellular pore paths with an average radius of 17 nm, but vanadyl complexes induce paths with the radius of 6 nm. The work suggests that the double fluorescence probe strategy is a useful and convenient approach for in vitro investigation of tight junction structural alternations caused by pharmacological or pathological events. PMID:27574102

  3. Spin electronic magnetic sensor based on functional oxides for medical imaging

    NASA Astrophysics Data System (ADS)

    Solignac, A.; Kurij, G.; Guerrero, R.; Agnus, G.; Maroutian, T.; Fermon, C.; Pannetier-Lecoeur, M.; Lecoeur, Ph.

    2015-09-01

    To detect magnetic signals coming from the body, in particular those produced by the electrical activity of the heart or of the brain, the development of ultrasensitive sensors is required. In this regard, magnetoresistive sensors, stemming from spin electronics, are very promising devices. For example, tunnel magnetoresistance (TMR) junctions based on MgO tunnel barrier have a high sensitivity. Nevertheless, TMR also often have high level of noise. Full spin polarized materials like manganite La0.67Sr0.33MnO3 (LSMO) are attractive alternative candidates to develop such sensors because LSMO exhibits a very low 1/f noise when grown on single crystals, and a TMR response has been observed with values up to 2000%. This kind of tunnel junctions, when combined with a high Tc superconductor loop, opens up possibilities to develop full oxide structures working at liquid nitrogen temperature and suitable for medical imaging. In this work, we investigated on LSMO-based tunnel junctions the parameters controlling the overall system performances, including not only the TMR ratio, but also the pinning of the reference layer and the noise floor. We especially focused on studying the effects of the quality of the barrier, the interface and the electrode, by playing with materials and growth conditions.

  4. Dynamic pH junction preconcentration in capillary electrophoresis- electrospray ionization-mass spectrometry for proteomics analysis.

    PubMed

    Zhu, Guijie; Sun, Liangliang; Dovichi, Norman J

    2016-09-21

    Capillary zone electrophoresis (CZE)-electrospray ionization (ESI)-mass spectrometry (MS) is an interesting complimentary technique to reversed phase liquid chromatography (RPLC)-ESI-MS for proteomics research. However, the low sample loading capacity of CZE (typically a few nL) can limit its application for large-scale proteomics. A number of on-line sample preconcentration methods have been developed to increase sample loading volumes. This review considers the dynamic pH junction as a simple on-line sample preconcentration method; this method is well suited for amphiprotic analytes. In the pH junction, these analytes are suspended in a basic buffer, injected by pressure into the capillary, and separated in an acidic background electrolyte, with no changes in either CZE-MS operations or instrumentation. We have demonstrated that the dynamic pH junction method can improve the sample loading volume to sub-μL volumes without significant loss of separation capacity for bottom-up proteomic analysis. The dynamic pH junction based CZE-ESI-MS system has been applied for a number of complex biological samples, including the E. coli proteome, impurities in recombinant antibody therapeutics, and the characterization of the phosphoproteome from a human cell line. PMID:27460877

  5. Improving photovoltaic performance through radiative cooling in both terrestrial and extraterrestrial environments.

    PubMed

    Safi, Taqiyyah S; Munday, Jeremy N

    2015-09-21

    The method of detailed balance, introduced by Shockley and Queisser, is often used to find an upper theoretical limit for the efficiency of semiconductor pn-junction based photovoltaics. Typically the solar cell is assumed to be at an ambient temperature of 300 K. In this paper, we describe and analyze the use of radiative cooling techniques to lower the solar cell temperature below the ambient to surpass the detailed balance limit for a cell in contact with an ideal heat sink. We show that by combining specifically designed radiative cooling structures with solar cells, efficiencies higher than the limiting efficiency achievable at 300 K can be obtained for solar cells in both terrestrial and extraterrestrial environments. We show that our proposed structure yields an efficiency 0.87% higher than a typical PV module at operating temperatures in a terrestrial application. We also demonstrate an efficiency advantage of 0.4-2.6% for solar cells in an extraterrestrial environment in near-earth orbit.

  6. Modeling and theoretical efficiency of a silicon nanowire based thermoelectric junction with area enhancement

    NASA Astrophysics Data System (ADS)

    Seong, M.; Sadhu, J. S.; Ma, J.; Ghossoub, M. G.; Sinha, S.

    2012-06-01

    Recent experimental work suggests that individual silicon nanowires with rough surfaces possess a thermoelectric figure of merit as high as 0.6 near room temperature. This paper addresses the possibility of using an array of such nanowires in a thermoelectric junction for generation. Employing a model of frequency dependent phonon boundary scattering, we estimate the effective thermal conductivity of the array and investigate heat flow through the junction. We show that charge transport is largely unaffected by the roughness scales considered. Enhancing the area for heat exchange at an individual 200 μm × 200 μm p-n junction yields significant temperature differences across the junction leading to power >0.6 mW and efficiency >1.5% for a junction with effective thermal conductivity <5 W/mK, when the source and sink are at 450 K and 300 K, respectively. We show that relatively short nanowires of ˜50 μm length are sufficient for obtaining peak power and reasonable efficiency. This substantially reduces the challenge of engineering low resistivity electrical contacts that critically affect power and efficiency. This paper provides insight into how fundamental transport in relation to bulk heat transfer and charge transport, affects the performance of thermoelectric junctions based on nanostructured materials.

  7. Modeling and theoretical efficiency of a silicon nanowire based thermoelectric junction with area enhancement

    SciTech Connect

    Seong, M; Sadhu, JS; Ma, J; Ghossoub, MG; Sinha, S

    2012-06-15

    Recent experimental work suggests that individual silicon nanowires with rough surfaces possess a thermoelectric figure of merit as high as 0.6 near room temperature. This paper addresses the possibility of using an array of such nanowires in a thermoelectric junction for generation. Employing a model of frequency dependent phonon boundary scattering, we estimate the effective thermal conductivity of the array and investigate heat flow through the junction. We show that charge transport is largely unaffected by the roughness scales considered. Enhancing the area for heat exchange at an individual 200 mu m x 200 mu m p-n junction yields significant temperature differences across the junction leading to power >0.6 mW and efficiency >1.5% for a junction with effective thermal conductivity <5 W/mK, when the source and sink are at 450 K and 300 K, respectively. We show that relatively short nanowires of similar to 50 mu m length are sufficient for obtaining peak power and reasonable efficiency. This substantially reduces the challenge of engineering low resistivity electrical contacts that critically affect power and efficiency. This paper provides insight into how fundamental transport in relation to bulk heat transfer and charge transport, affects the performance of thermoelectric junctions based on nanostructured materials. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4728189

  8. Remote driven and read MEMS sensors for harsh environments.

    PubMed

    Knobloch, Aaron J; Ahmad, Faisal R; Sexton, Dan W; Vernooy, David W

    2013-01-01

    The utilization of high accuracy sensors in harsh environments has been limited by the temperature constraints of the control electronics that must be co-located with the sensor. Several methods of remote interrogation for resonant sensors are presented in this paper which would allow these sensors to be extended to harsh environments. This work in particular demonstrates for the first time the ability to acoustically drive a silicon comb drive resonator into resonance and electromagnetically couple to the resonator to read its frequency. The performance of this system was studied as a function of standoff distance demonstrating the ability to excite and read the device from 22 cm when limited to drive powers of 30 mW. A feedback architecture was implemented that allowed the resonator to be driven into resonance from broadband noise and a standoff distance of 15 cm was demonstrated. It is emphasized that no junction-based electronic device was required to be co-located with the resonator, opening the door for the use of silicon-based, high accuracy MEMS devices in high temperature wireless applications.

  9. Josephson Effect in SFNS Josephson Junctions

    NASA Astrophysics Data System (ADS)

    Karminskaya, T. Yu.; Kupriyanov, M. Yu.; Golubov, A. A.; Sidorenko, A. S.

    The critical current, I C, of Josephson junctions both in ramp-type (S-FN-S) and in overlap (SNF-FN-FNS, SN-FN-NS, SNF-N-FNS) geometries has been calculated in the frame of linearized Usadel equations (S-superconductor, F-ferromagnetic, N-normal metal). For the ramp-type structures, in which S electrodes contact directly the end walls of FN bilayer, it is shown that I C may exhibit damping oscillations as a function of both the distance L between superconductors and thicknesses d F,N of ferromagnetic and normal layers. The conditions have been determined under which the decay length and period of oscillation of I C(L) at fixed d F are of the order of decay length of superconducting correlations in the N metal, ξN, that is much larger than in F film. In overlap configurations, in which S films are placed on the top of NF bilayer, the studied junctions have complex SNF or SN electrodes (N or NF bilayer are situated under a superconductor). We demonstrate that in these geometries the critical current can exceed that in ramp-type junctions. Based on these results, the choice of the most practically applicable geometry is discussed.

  10. Josephson effect in superconductor/ferromagnet structures with a complex weak-link region

    NASA Astrophysics Data System (ADS)

    Karminskaya, T. Yu.; Golubov, A. A.; Kupriyanov, M. Yu.; Sidorenko, A. S.

    2010-06-01

    The critical currents IC of SNF-FN-FNS, SN-FN-NS, and SNF-N-FNS Josephson junctions (S—superconductor, F—ferromagnetic, N—normal metal) with complex SNF or SN electrodes (N or NF bilayer are situated under a superconductor) are calculated in the framework of linearized Usadel equations for arbitrary overlap length d of SN interface. We demonstrate that in these geometries, in the case of large resistances of SN interfaces, the critical current can exceed that in ramp-type junctions. Based on these results, the choice of the most practically applicable geometry is discussed. We predict that in a certain parameter range there is single 0-π transition with the increase in the overlap length d . This single transition can be realized also in SFN-N-FNS Josephson junctions, where the coherence length in the weak-link region is a real quantity. Further, we predict that in SNF-N-FNS Josephson junctions 0-π transition may take place with increase in distance between superconducting electrodes.

  11. Optimization on photoelectric detection based on stacked La{sub 0.9}Sr{sub 0.1}MnO{sub 3-{delta}}/LaAlO{sub 3-{delta}} multijunctions

    SciTech Connect

    Jie Xing; Hui Yinghao; Er Jiaguo; Fang Yang

    2011-08-01

    Three multijunctions consisting of La{sub 0.9}Sr{sub 0.1}MnO{sub 3-{delta}} and LaAlO{sub 3-{delta}} on Si substrate have been fabricated under different oxygen pressures by laser molecular beam epitaxy. They exhibit nonlinear and rectifying current-voltage characteristics and evident photocurrent response to He-Ne laser illumination. Experimental results indicate that the periodically stacked multijunction grown under lower oxygen pressure shows a better rectification behavior and a higher photocurrent. The photovoltaic responsivities of the multijunctions are enhanced greatly at reverse bias and are much higher than that of a similarly grown single p-n junction. Based on the band structure of the multilayers, a possible mechanism of the photovoltaic process was proposed. A high photovoltage responsivity of 168.6 mV/mW has been achieved at - 6 V bias; this demonstrates the potential of the present multijunction configuration for photodetectors operating at room temperature.

  12. High-Yield Growth and Characterization of ⟨100⟩ InP p-n Diode Nanowires.

    PubMed

    Cavalli, Alessandro; Wang, Jia; Esmaeil Zadeh, Iman; Reimer, Michael E; Verheijen, Marcel A; Soini, Martin; Plissard, Sebastien R; Zwiller, Val; Haverkort, Jos E M; Bakkers, Erik P A M

    2016-05-11

    Semiconductor nanowires are nanoscale structures holding promise in many fields such as optoelectronics, quantum computing, and thermoelectrics. Nanowires are usually grown vertically on (111)-oriented substrates, while (100) is the standard in semiconductor technology. The ability to grow and to control impurity doping of ⟨100⟩ nanowires is crucial for integration. Here, we discuss doping of single-crystalline ⟨100⟩ nanowires, and the structural and optoelectronic properties of p-n junctions based on ⟨100⟩ InP nanowires. We describe a novel approach to achieve low resistance electrical contacts to nanowires via a gradual interface based on p-doped InAsP. As a first demonstration in optoelectronic devices, we realize a single nanowire light emitting diode in a ⟨100⟩-oriented InP nanowire p-n junction. To obtain high vertical yield, which is necessary for future applications, we investigate the effect of the introduction of dopants on the nanowire growth. PMID:27045232

  13. Coherent-state storage and retrieval between superconducting cavities using parametric frequency conversion

    SciTech Connect

    Sirois, A. J.; Castellanos-Beltran, M. A.; DeFeo, M. P.; Ranzani, L.; Lecocq, F.; Simmonds, R. W.; Teufel, J. D.; Aumentado, J.

    2015-04-27

    In superconducting quantum information, machined aluminum superconducting cavities have proven to be a well-controlled, low-dissipation electromagnetic environment for quantum circuits such as qubits. They can possess large internal quality factors, Q{sub int} > 10{sup 8}, and present the possibility of storing quantum information for times far exceeding those of microfabricated circuits. However, in order to be useful as a storage element, these cavities require a fast “read/write” mechanism—in other words, they require tunable coupling between other systems of interest such as other cavity modes and qubits, as well as any associated readout hardware. In this work, we demonstrate these qualities in a simple dual cavity architecture in which a low-Q “readout” mode is parametrically coupled to a high-Q “storage” mode, allowing us to store and retrieve classical information. Specifically, we employ a flux-driven Josephson junction-based coupling scheme to controllably swap coherent states between two cavities, demonstrating full, sequenced control over the coupling rates between modes.

  14. Remote Driven and Read MEMS Sensors for Harsh Environments

    PubMed Central

    Knobloch, Aaron J.; Ahmad, Faisal R.; Sexton, Dan W.; Vernooy, David W.

    2013-01-01

    The utilization of high accuracy sensors in harsh environments has been limited by the temperature constraints of the control electronics that must be co-located with the sensor. Several methods of remote interrogation for resonant sensors are presented in this paper which would allow these sensors to be extended to harsh environments. This work in particular demonstrates for the first time the ability to acoustically drive a silicon comb drive resonator into resonance and electromagnetically couple to the resonator to read its frequency. The performance of this system was studied as a function of standoff distance demonstrating the ability to excite and read the device from 22 cm when limited to drive powers of 30 mW. A feedback architecture was implemented that allowed the resonator to be driven into resonance from broadband noise and a standoff distance of 15 cm was demonstrated. It is emphasized that no junction-based electronic device was required to be co-located with the resonator, opening the door for the use of silicon-based, high accuracy MEMS devices in high temperature wireless applications. PMID:24152935

  15. Fabrication of high-temperature superconductor single-flux-quantum circuits using a multilayer structure with a smooth surface

    NASA Astrophysics Data System (ADS)

    Wakana, H.; Adachi, S.; Tsubone, K.; Tarutani, Y.; Kamitani, Ai; Nakayama, K.; Ishimaru, Y.; Tanabe, K.

    2006-05-01

    We have developed a multilayer structure with a smooth surface and fabrication processes for HTS single-flux-quantum (SFQ) circuits. The multilayer structure with surface roughness Ra less than 2 nm, composed of a La0.2-Y0.9Ba1.9Cu3Ox ground plane and base electrode layer, and SrSnO3 insulating layers, was deposited by off-axis magnetron sputtering. We have fabricated interface-engineered junctions based on the multilayer structure using an La0.2-Yb0.9Ba1.9Cu3Ox counter-electrode layer prepared by pulsed laser deposition. The fabricated junctions exhibited excellent Josephson characteristics with a 1-σ spread in Ic as low as 8% for 1000 junctions. The sheet inductance values below 50 K were 0.8-1.0 pH per square. Operation of several elementary SFQ circuits including a toggle flip-flop, a confluence buffer, a set-reset flip-flop and other SFQ elements has been successfully demonstrated at 30-60 K.

  16. Improving photovoltaic performance through radiative cooling in both terrestrial and extraterrestrial environments.

    PubMed

    Safi, Taqiyyah S; Munday, Jeremy N

    2015-09-21

    The method of detailed balance, introduced by Shockley and Queisser, is often used to find an upper theoretical limit for the efficiency of semiconductor pn-junction based photovoltaics. Typically the solar cell is assumed to be at an ambient temperature of 300 K. In this paper, we describe and analyze the use of radiative cooling techniques to lower the solar cell temperature below the ambient to surpass the detailed balance limit for a cell in contact with an ideal heat sink. We show that by combining specifically designed radiative cooling structures with solar cells, efficiencies higher than the limiting efficiency achievable at 300 K can be obtained for solar cells in both terrestrial and extraterrestrial environments. We show that our proposed structure yields an efficiency 0.87% higher than a typical PV module at operating temperatures in a terrestrial application. We also demonstrate an efficiency advantage of 0.4-2.6% for solar cells in an extraterrestrial environment in near-earth orbit. PMID:26406742

  17. Hybrid pn-junction solar cells based on layers of inorganic nanocrystals and organic semiconductors: optimization of layer thickness by considering the width of the depletion region.

    PubMed

    Saha, Sudip K; Guchhait, Asim; Pal, Amlan J

    2014-03-01

    We report the formation and characterization of hybrid pn-junction solar cells based on a layer of copper diffused silver indium disulfide (AgInS2@Cu) nanoparticles and another layer of copper phthalocyanine (CuPc) molecules. With copper diffusion in the nanocrystals, their optical absorption and hence the activity of the hybrid pn-junction solar cells was extended towards the near-IR region. To decrease the particle-to-particle separation for improved carrier transport through the inorganic layer, we replaced the long-chain ligands of copper-diffused nanocrystals in each monolayer with short-ones. Under illumination, the hybrid pn-junctions yielded a higher short-circuit current as compared to the combined contribution of the Schottky junctions based on the components. A wider depletion region at the interface between the two active layers in the pn-junction device as compared to that of the Schottky junctions has been considered to analyze the results. Capacitance-voltage characteristics under a dark condition supported such a hypothesis. We also determined the width of the depletion region in the two layers separately so that a pn-junction could be formed with a tailored thickness of the two materials. Such a "fully-depleted" device resulted in an improved photovoltaic performance, primarily due to lessening of the internal resistance of the hybrid pn-junction solar cells. PMID:24452695

  18. Colorimetric detection of gene transcript by target-induced three-way junction formation.

    PubMed

    Wang, Xuchu; Liu, Weiwei; Yin, Binbin; Yu, Pan; Duan, Xiuzhi; Liao, Zhaoping; Liu, Chunhua; Sang, Yiwen; Zhang, Gong; Chen, Yuhua; Tao, Zhihua

    2016-09-01

    Gene transcript often varies by alternative splicing, which plays different biological role that results in diversity of gene expression. Therefore, a simple and accurate identification of targeted transcript variant is of prime importance to achieve a precise molecular diagnosis. In this work, we presented a three-way junction based system where two split G-quadruplex forming sequences were coupled into two probes. Only upon the introduction of target gene transcript that offering a specific recognizable splicing site did the two probes assembled into three way junction conformation in a devised process, thus providing a functional G-quadruplex conformation that greatly enhanced hemin peroxidation. A notable resolution for gene splicing site detection was achieved. The detection limitation by colorimetric assay was 0.063μM, and this system has been proved to discriminate even in a single base false level around splicing site (about 3 times of single mismatched analyte to gain an equal signal by perfect analyte ). Furthermore, recoveries of 78.1%, 88.1%, 104.6% were obtained with 0.75μM, 0.25μM, 0.083μM of target, respectively, showing a capacity to further exploit a simple equipped device for gene transcript detection. PMID:27343570

  19. Circulation of intergenotype recombinant noroviruses GII.9/GII.6 from 2006 to 2011 in central Greece.

    PubMed

    Ruether, I G A; Tsakogiannis, D; Kyriakopoulou, Z; Dimitriou, T G; Papamichail, C; Gartzonika, C; Leveidiotou-Stefanou, S; Markoulatos, P

    2014-02-01

    Noroviruses (NoVs) are members of the Caliciviridae family and are recognized as a worldwide cause of acute nonbacterial gastroenteritis. Based on the genetic analysis of the RdRp and capsid regions, human NoVs are divided into three genogroups (Gs), GI, GII, and GIV, which further segregate into distinct lineages called genotypes. In this study, in an attempt to discern the circulation of an intergenotypic recombinant GII.9/GII.6, which was previously reported by our group in central Greece, we investigated NoVs in raw sewages from 2006 to 2011 and compared the results with the viruses detected from clinical samples in the same area and in the same time period. Two specific primer pairs for NoVs were designed which amplified in a single PCR fragment from polymerase to capsid gene covering the widespread recombination point in ORF1/ORF2 junction. Based on the genetic analysis, recombinant NoV strains GII.9/GII.6 were identified. Fourteen out of 15 environmental and eight out of ten clinical samples that were used in the present study were positive, with both primer pairs, confirming that the intergenotypic recombinant GII.9/GII.6 was circulating in the population of central Greece from 2006 to 2011. The crossover point was identified to be within the overlapping region of ORF1/ORF2 (GII.9/GII.6, respectively) and was determined by Simplot at nucleotide position 5,032 bp.

  20. Understanding the failure mechanisms of microwave bipolar transistors caused by electrostatic discharge

    NASA Astrophysics Data System (ADS)

    Jin, Liu; Yongguang, Chen; Zhiliang, Tan; Jie, Yang; Xijun, Zhang; Zhenxing, Wang

    2011-10-01

    Electrostatic discharge (ESD) phenomena involve both electrical and thermal effects, and a direct electrostatic discharge to an electronic device is one of the most severe threats to component reliability. Therefore, the electrical and thermal stability of multifinger microwave bipolar transistors (BJTs) under ESD conditions has been investigated theoretically and experimentally. 100 samples have been tested for multiple pulses until a failure occurred. Meanwhile, the distributions of electric field, current density and lattice temperature have also been analyzed by use of the two-dimensional device simulation tool Medici. There is a good agreement between the simulated results and failure analysis. In the case of a thermal couple, the avalanche current distribution in the fingers is in general spatially unstable and results in the formation of current crowding effects and crystal defects. The experimental results indicate that a collector-base junction is more sensitive to ESD than an emitter-base junction based on the special device structure. When the ESD level increased to 1.3 kV, the collector-base junction has been burnt out first. The analysis has also demonstrated that ESD failures occur generally by upsetting the breakdown voltage of the dielectric or overheating of the aluminum-silicon eutectic. In addition, fatigue phenomena are observed during ESD testing, with devices that still function after repeated low-intensity ESDs but whose performances have been severely degraded.

  1. Epitaxial growth of ultrathin MgO layers on Fe3O4(0 0 1) films

    NASA Astrophysics Data System (ADS)

    Nordmann, T.; Kuschel, O.; Wollschläger, J.

    2016-09-01

    The initial growth stages of MgO on Fe3O4 films are studied by means of X-ray photoelectron spectroscopy and low energy electron diffraction to clarify stoichiometric and structural properties of these layered structures. This bilayer structure is important to fabricate high quality magnetic tunnel junctions based on Fe3O4 electrodes and MgO tunneling barriers. For this purpose, the deposition temperature of MgO has been varied between 100 °C and 250 °C. Initially, MgO grows layer-by-layer on Fe3O4/MgO(0 0 1) forming a wetting layer. Depending on the growth temperature, after growth of a 2-3 nm thick laminar wetting layer, the MgO films finally start to roughen during growth. Thus the growth of MgO on Fe3O4/MgO(0 0 1) is described by a Stranski-Krastanov growth mode. Diffraction experiments show that the magnetite (√{ 2} ×√{ 2})R45° superstructure is removed already during the initial stages of MgO deposition. Furthermore, these experiments show that MgO films are rougher for growth at low deposition temperatures.

  2. Conductance bistability in metal oxide junctions

    NASA Astrophysics Data System (ADS)

    Tan, Zhongkui; Patel, Vijay; Monge, Esteban; Chang, Shih-Sheng; Pottorf, Shawn; Lukens, James; Likharev, Konstantin

    2009-03-01

    We are exploring conductance bistability (memory) effects in junctions based on metal oxides, in the context of their possible applications in hybrid CMOS/nanoelectronic (e.g., CMOL [1]) circuits. So far, we have investigated CuOx, NbOx and TiOx formed by thermal and plasma oxidation, with or without rapid thermal post-annealing (at 200 to 800^oC for 30 to 300 seconds). Conductance switching effects have been observed for all these materials. Particularly high endurance (over 1000 switching cycles) has been obtained for TiOx junctions plasma oxidized in 15mTorr oxygen and then post-annealed at 700^oC. However, the ON/OFF conductance ratio for these junctions is only about 5, and the sample-to-sample reproducibility is much lower than required for integrated circuit applications. Our plans are to extend our studies to a-Si junctions with one Ag electrode, and multilayer TiOx junctions, with the main goal to improve device reproducibility. The work is supported in part by AFOSR. [3pt] [1] K. K. Likharev, ``Hybrid CMOS/Nanoelectronic Circuits,'' accepted for publication in J. Nanoelectronics and Optoelectronics, Nov. 2008.

  3. Experimental Study of Resistive Bistability in Metal Oxide Junctions

    SciTech Connect

    Su, D.; Tan, Z.; Patel, V.; Likharev, K.K.; Zhu, Y.

    2011-05-01

    We have studied resistive bistability (memory) effects in junctions based on metal oxides, with a focus on sample-to-sample reproducibility, which is necessary for the use of such junctions as crosspoint devices of hybrid CMOS/nanoelectronic circuits. Few-nm-thick layers of NbO{sub x}, CuO{sub x} and TiO{sub x} have been formed by thermal and plasma oxidation, at various deposition and oxidation conditions, both with and without rapid thermal post-annealing. The resistive bistability effect has been observed for all these materials, with particularly high endurance (over 10{sup 3} switching cycles) obtained for single-layer TiO{sub 2} junctions, and the best reproducibility reached for multi-layer junctions of the same material. Fabrication optimization has allowed us to improve the OFF/ON resistance ratio to about 10{sup 3}, but the sample-to-sample reproducibility is so far lower than that required for large-scale integration.

  4. Exploring tight junction alteration using double fluorescent probe combination of lanthanide complex with gold nanoclusters.

    PubMed

    Wang, Xinyi; Wang, Na; Yuan, Lan; Li, Na; Wang, Junxia; Yang, Xiaoda

    2016-01-01

    Tight junctions play a key role in restricting or regulating passage of liquids, ions and large solutes through various biological barriers by the paracellular route. Changes in paracellular permeation indicate alteration of the tight junction. However, it is very difficult to obtain the structural change information by measuring paracellular flux based on transepithelial electrical resistance or using fluorescein-labeled dextrans. Here we show that the BSA and GSH stabilized gold nanoclusters exhibit marginal cytotoxicity and pass through the MDCK monolayer exclusively through the paracellular pathway. We propose a double fluorescence probe strategy, the combination of a proven paracellular indicator (europium complex) with fluorescent gold nanoclusters. We calculate changes of structural parameters in tight junctions based on determination of the diffusion coefficients of the probes. Two different types of tight junction openers are used to validate our strategy. Results show that EDTA disrupts tight junction structures and induces large and smooth paracellular pore paths with an average radius of 17 nm, but vanadyl complexes induce paths with the radius of 6 nm. The work suggests that the double fluorescence probe strategy is a useful and convenient approach for in vitro investigation of tight junction structural alternations caused by pharmacological or pathological events. PMID:27574102

  5. Highly reliable ag nanowire flexible transparent electrode with mechanically welded junctions.

    PubMed

    Hwang, Byungil; Shin, Hae-A-Seul; Kim, Taegeon; Joo, Young-Chang; Han, Seung Min

    2014-08-27

    Deformation behavior of the Ag nanowire flexible transparent electrode under bending strain is studied and results in a novel approach for highly reliable Ag nanowire network with mechanically welded junctions. Bending fatigue tests up to 500,000 cycles are used to evaluate the in situ resistance change while imposing fixed, uniform bending strain. In the initial stages of bending cycles, the thermally annealed Ag nanowire networks show a reduction in fractional resistance followed by a transient and steady-state increase at later stages of cycling. SEM analysis reveals that the initial reduction in resistance is caused by mechanical welding as a result of applied bending strain, and the increase in resistance at later stages of cycling is determined to be due to the failure at the thermally locked-in junctions. Based on the observations from this study, a new methodology for highly reliable Ag nanowire network is proposed: formation of Ag nanowire networks with no prior thermal annealing but localized junction formation through simple application of mechanical bending strain. The non-annealed, mechanically welded Ag nanowire network shows significantly enhanced cyclic reliability with essentially 0% increase in resistance due to effective formation of localized wire-to-wire contact.

  6. Exploring tight junction alteration using double fluorescent probe combination of lanthanide complex with gold nanoclusters

    NASA Astrophysics Data System (ADS)

    Wang, Xinyi; Wang, Na; Yuan, Lan; Li, Na; Wang, Junxia; Yang, Xiaoda

    2016-08-01

    Tight junctions play a key role in restricting or regulating passage of liquids, ions and large solutes through various biological barriers by the paracellular route. Changes in paracellular permeation indicate alteration of the tight junction. However, it is very difficult to obtain the structural change information by measuring paracellular flux based on transepithelial electrical resistance or using fluorescein-labeled dextrans. Here we show that the BSA and GSH stabilized gold nanoclusters exhibit marginal cytotoxicity and pass through the MDCK monolayer exclusively through the paracellular pathway. We propose a double fluorescence probe strategy, the combination of a proven paracellular indicator (europium complex) with fluorescent gold nanoclusters. We calculate changes of structural parameters in tight junctions based on determination of the diffusion coefficients of the probes. Two different types of tight junction openers are used to validate our strategy. Results show that EDTA disrupts tight junction structures and induces large and smooth paracellular pore paths with an average radius of 17 nm, but vanadyl complexes induce paths with the radius of 6 nm. The work suggests that the double fluorescence probe strategy is a useful and convenient approach for in vitro investigation of tight junction structural alternations caused by pharmacological or pathological events.

  7. Ultrasensitive mechanical crack-based sensor inspired by the spider sensory system.

    PubMed

    Kang, Daeshik; Pikhitsa, Peter V; Choi, Yong Whan; Lee, Chanseok; Shin, Sung Soo; Piao, Linfeng; Park, Byeonghak; Suh, Kahp-Yang; Kim, Tae-il; Choi, Mansoo

    2014-12-11

    Recently developed flexible mechanosensors based on inorganic silicon, organic semiconductors, carbon nanotubes, graphene platelets, pressure-sensitive rubber and self-powered devices are highly sensitive and can be applied to human skin. However, the development of a multifunctional sensor satisfying the requirements of ultrahigh mechanosensitivity, flexibility and durability remains a challenge. In nature, spiders sense extremely small variations in mechanical stress using crack-shaped slit organs near their leg joints. Here we demonstrate that sensors based on nanoscale crack junctions and inspired by the geometry of a spider's slit organ can attain ultrahigh sensitivity and serve multiple purposes. The sensors are sensitive to strain (with a gauge factor of over 2,000 in the 0-2 per cent strain range) and vibration (with the ability to detect amplitudes of approximately 10 nanometres). The device is reversible, reproducible, durable and mechanically flexible, and can thus be easily mounted on human skin as an electronic multipixel array. The ultrahigh mechanosensitivity is attributed to the disconnection-reconnection process undergone by the zip-like nanoscale crack junctions under strain or vibration. The proposed theoretical model is consistent with experimental data that we report here. We also demonstrate that sensors based on nanoscale crack junctions are applicable to highly selective speech pattern recognition and the detection of physiological signals. The nanoscale crack junction-based sensory system could be useful in diverse applications requiring ultrahigh displacement sensitivity.

  8. Ultrasensitive mechanical crack-based sensor inspired by the spider sensory system

    NASA Astrophysics Data System (ADS)

    Kang, Daeshik; Pikhitsa, Peter V.; Choi, Yong Whan; Lee, Chanseok; Shin, Sung Soo; Piao, Linfeng; Park, Byeonghak; Suh, Kahp-Yang; Kim, Tae-Il; Choi, Mansoo

    2014-12-01

    Recently developed flexible mechanosensors based on inorganic silicon, organic semiconductors, carbon nanotubes, graphene platelets, pressure-sensitive rubber and self-powered devices are highly sensitive and can be applied to human skin. However, the development of a multifunctional sensor satisfying the requirements of ultrahigh mechanosensitivity, flexibility and durability remains a challenge. In nature, spiders sense extremely small variations in mechanical stress using crack-shaped slit organs near their leg joints. Here we demonstrate that sensors based on nanoscale crack junctions and inspired by the geometry of a spider's slit organ can attain ultrahigh sensitivity and serve multiple purposes. The sensors are sensitive to strain (with a gauge factor of over 2,000 in the 0-2 per cent strain range) and vibration (with the ability to detect amplitudes of approximately 10 nanometres). The device is reversible, reproducible, durable and mechanically flexible, and can thus be easily mounted on human skin as an electronic multipixel array. The ultrahigh mechanosensitivity is attributed to the disconnection-reconnection process undergone by the zip-like nanoscale crack junctions under strain or vibration. The proposed theoretical model is consistent with experimental data that we report here. We also demonstrate that sensors based on nanoscale crack junctions are applicable to highly selective speech pattern recognition and the detection of physiological signals. The nanoscale crack junction-based sensory system could be useful in diverse applications requiring ultrahigh displacement sensitivity.

  9. Loss of the Coffin-Lowry syndrome-associated gene RSK2 alters ERK activity, synaptic function and axonal transport in Drosophila motoneurons

    PubMed Central

    Beck, Katherina; Ehmann, Nadine; Andlauer, Till F. M.; Ljaschenko, Dmitrij; Strecker, Katrin; Fischer, Matthias; Kittel, Robert J.; Raabe, Thomas

    2015-01-01

    ABSTRACT Plastic changes in synaptic properties are considered as fundamental for adaptive behaviors. Extracellular-signal-regulated kinase (ERK)-mediated signaling has been implicated in regulation of synaptic plasticity. Ribosomal S6 kinase 2 (RSK2) acts as a regulator and downstream effector of ERK. In the brain, RSK2 is predominantly expressed in regions required for learning and memory. Loss-of-function mutations in human RSK2 cause Coffin-Lowry syndrome, which is characterized by severe mental retardation and low IQ scores in affected males. Knockout of RSK2 in mice or the RSK ortholog in Drosophila results in a variety of learning and memory defects. However, overall brain structure in these animals is not affected, leaving open the question of the pathophysiological consequences. Using the fly neuromuscular system as a model for excitatory glutamatergic synapses, we show that removal of RSK function causes distinct defects in motoneurons and at the neuromuscular junction. Based on histochemical and electrophysiological analyses, we conclude that RSK is required for normal synaptic morphology and function. Furthermore, loss of RSK function interferes with ERK signaling at different levels. Elevated ERK activity was evident in the somata of motoneurons, whereas decreased ERK activity was observed in axons and the presynapse. In addition, we uncovered a novel function of RSK in anterograde axonal transport. Our results emphasize the importance of fine-tuning ERK activity in neuronal processes underlying higher brain functions. In this context, RSK acts as a modulator of ERK signaling. PMID:26398944

  10. Loss of the Coffin-Lowry syndrome-associated gene RSK2 alters ERK activity, synaptic function and axonal transport in Drosophila motoneurons.

    PubMed

    Beck, Katherina; Ehmann, Nadine; Andlauer, Till F M; Ljaschenko, Dmitrij; Strecker, Katrin; Fischer, Matthias; Kittel, Robert J; Raabe, Thomas

    2015-11-01

    Plastic changes in synaptic properties are considered as fundamental for adaptive behaviors. Extracellular-signal-regulated kinase (ERK)-mediated signaling has been implicated in regulation of synaptic plasticity. Ribosomal S6 kinase 2 (RSK2) acts as a regulator and downstream effector of ERK. In the brain, RSK2 is predominantly expressed in regions required for learning and memory. Loss-of-function mutations in human RSK2 cause Coffin-Lowry syndrome, which is characterized by severe mental retardation and low IQ scores in affected males. Knockout of RSK2 in mice or the RSK ortholog in Drosophila results in a variety of learning and memory defects. However, overall brain structure in these animals is not affected, leaving open the question of the pathophysiological consequences. Using the fly neuromuscular system as a model for excitatory glutamatergic synapses, we show that removal of RSK function causes distinct defects in motoneurons and at the neuromuscular junction. Based on histochemical and electrophysiological analyses, we conclude that RSK is required for normal synaptic morphology and function. Furthermore, loss of RSK function interferes with ERK signaling at different levels. Elevated ERK activity was evident in the somata of motoneurons, whereas decreased ERK activity was observed in axons and the presynapse. In addition, we uncovered a novel function of RSK in anterograde axonal transport. Our results emphasize the importance of fine-tuning ERK activity in neuronal processes underlying higher brain functions. In this context, RSK acts as a modulator of ERK signaling.

  11. Conductance saturation in a series of highly transmitting molecular junctions

    NASA Astrophysics Data System (ADS)

    Yelin, T.; Korytár, R.; Sukenik, N.; Vardimon, R.; Kumar, B.; Nuckolls, C.; Evers, F.; Tal, O.

    2016-04-01

    Revealing the mechanisms of electronic transport through metal-molecule interfaces is of central importance for a variety of molecule-based devices. A key method for understanding these mechanisms is based on the study of conductance versus molecule length in molecular junctions. However, previous works focused on transport governed either by coherent tunnelling or hopping, both at low conductance. Here, we study the upper limit of conductance across metal-molecule-metal interfaces. Using highly conducting single-molecule junctions based on oligoacenes with increasing length, we find that the conductance saturates at an upper limit where it is independent of molecule length. With the aid of two prototype systems, in which the molecules are contacted by either Ag or Pt electrodes, we find two different possible origins for conductance saturation. The results are explained by an intuitive model, backed by ab initio calculations. Our findings shed light on the mechanisms that constrain the conductance of metal-molecule interfaces at the high-transmission limit.

  12. Directional quantum transport in graphyne p-n junction

    NASA Astrophysics Data System (ADS)

    Soodchomshom, Bumned; Tang, I.-Ming; Hoonsawat, Rassmidara

    2013-02-01

    Graphyne, a newly proposed allotrope of carbon, has a structure which is topologically equivalent to that of a strongly distorted graphene [B. G. Kim and H. J. Choi, Phys. Rev. B 86, 115435 (2012)]. The energy gap between the valence and conduction bands is due to the symmetry breaking caused by there being three topologically inequivalent hoping elements. The valleyless fermionic transport properties of γ-graphyne are different from those of graphene since the two valleys are merged together in this carbon allotrope. The transmission and conductance of the electrons in γ-graphyne are found to be directionally dependent. Klein tunneling is predicted if the tunneling is in the y-direction. If the tunneling is in the x-direction, perfect back reflection (anti Klein tunneling) is predicted if the tunneling is at normal incidence. The consequences of these directional transport properties on the performances of p-n junctions fabricated with this carbon allotrope are studied. This work reveals the advantages of building p-n junctions based on γ-gaphyne.

  13. Pseudogap formation and unusual quasiparticle tunneling in cuprate superconductors: Polaronic and multiple-gap effects on the tunneling spectra

    NASA Astrophysics Data System (ADS)

    Dzhumanov, S.; Ganiev, O. K.; Djumanov, Sh. S.

    2013-10-01

    We propose new simple and generalized multiple-gap models of quasiparticle tunneling across the high-Tc cuprate superconductor (HTSC)/insulator/normal metal (SIN) junction based on the two different mechanisms for tunneling at positive and negative bias voltages, and the gap inhomogeneity (i.e., multiple-gap) picture. The tunneling of electrons from the normal metal into the quasiparticle states in HTSC with the BCS-type density of states (DOSs) takes place at V>0, while the tunneling of Cooper pairs and large polarons from the HTSC with the BCS DOS and quasi-free state DOS (which appears only in the dissociation of polarons) into the normal metal occurs at V<0. We show that most of the unusual features of tunneling spectra such as nearly U- and V-shaped subgap features, peak-dip-hump structure (appearing systematically at V<0) and asymmetry of the conductance peaks and their temperature and doping dependences, and shoulder-like features inside the main conductance peaks arise naturally in our specific models of SIN tunneling. The experimental tunneling spectra of Bi2Sr2CaCu2O8+δ are adequately reproduced by using the specific multiple-gap models and taking into account the distribution of BCS and polaronic gap values.

  14. Superfluid qubit systems with ring shaped optical lattices.

    PubMed

    Amico, Luigi; Aghamalyan, Davit; Auksztol, Filip; Crepaz, Herbert; Dumke, Rainer; Kwek, Leong Chuan

    2014-01-01

    We study an experimentally feasible qubit system employing neutral atomic currents. Our system is based on bosonic cold atoms trapped in ring-shaped optical lattice potentials. The lattice makes the system strictly one dimensional and it provides the infrastructure to realize a tunable ring-ring interaction. Our implementation combines the low decoherence rates of neutral cold atoms systems, overcoming single site addressing, with the robustness of topologically protected solid state Josephson flux qubits. Characteristic fluctuations in the magnetic fields affecting Josephson junction based flux qubits are expected to be minimized employing neutral atoms as flux carriers. By breaking the Galilean invariance we demonstrate how atomic currents through the lattice provide an implementation of a qubit. This is realized either by artificially creating a phase slip in a single ring, or by tunnel coupling of two homogeneous ring lattices. The single qubit infrastructure is experimentally investigated with tailored optical potentials. Indeed, we have experimentally realized scaled ring-lattice potentials that could host, in principle, n ~ 10 of such ring-qubits, arranged in a stack configuration, along the laser beam propagation axis. An experimentally viable scheme of the two-ring-qubit is discussed, as well. Based on our analysis, we provide protocols to initialize, address, and read-out the qubit.

  15. Non-Severinghaus potentiometric dissolved CO2 sensor with improved characteristics.

    PubMed

    Xie, Xiaojiang; Bakker, Eric

    2013-02-01

    A new type of carbon dioxide sensor comprising a pH glass electrode measured against a carbonate-selective membrane electrode based on a tweezer type carbonate ionophore is presented here for the first time. No cumbersome liquid junction based reference element is utilized in this measurement. The sensor shows an expected nernstian divalent response slope to dissolved CO(2) over a wide range covering the routine environmental and physiological PCO(2) levels. Unlike the conventional Severinghaus CO(2) probe for which the response is substantially delayed to up to 10 min due to diffusion of carbon dioxide into the internal compartment, the ion-selective CO(2) sensor proposed here shows a response time (t(95%)) of 5 s. When used together with a traditional reference electrode, the sensor system is confirmed to also monitor sample pH and carbonate along with carbon dioxide. A selectivity analysis suggests that Cl(-) does not interfere even at high concentrations, allowing one to explore this type of sensor probe for use in seawater or undiluted blood samples. The CO(2) probe has been used in an aquarium to monitor the CO(2) levels caused by the diurnal cycles caused by the metabolism of the aquatic plants and shows stable and reproducible results. PMID:23305117

  16. Gate-tunable tunneling resistance in graphene/topological insulator vertical junctions

    NASA Astrophysics Data System (ADS)

    Zhang, Liang; Yan, Yuan; Wu, Han-Chun; Liao, Zhi-Min; Yu, Da-Peng

    The emergence of graphene-based vertical heterostructures, especially stacked by various layered materials, opens up new promising possibilities for investigations and applications. The junction based on two famous Dirac materials, graphene and topological insulator, Bi2Se3, can considerably enlarge the family of van der Waals heterostructures, while the experimental approach to obtain controllable interface of these junctions is still a challenge. Here we show the experimental realization of the vertical heterojunction between Bi2Se3 and monolayer graphene. The tunneling-mediated quantum oscillations are identified to arise from several two-dimensional conducting layers. The electrostatic field induced by back gate voltage, as well as the magnetic field, is applied to tailor the available density of states near the Fermi surface. We observe exotic gate-tunable tunneling resistance in high magnetic field, which is attributed to semimetal-quantum Hall insulator transition in the underlying graphene. This work was supported by MOST (Nos. 2013CB934600, 2013CB932602) and NSFC (Nos. 11274014, 11234001).

  17. Electrostatically tunable lateral MoTe2 p-n junction for use in high-performance optoelectronics.

    PubMed

    Wang, Zhenxing; Wang, Feng; Yin, Lei; Huang, Yun; Xu, Kai; Wang, Fengmei; Zhan, Xueying; He, Jun

    2016-07-21

    Because of their ultimate thickness, layered structure and high flexibility, pn junctions based on layered two-dimensional semiconductors have been attracting increasing attention recently. In this study, for the first time, we fabricated lateral pn junctions (LPNJs) based on ultrathin MoTe2 by introducing two separated electrostatic back gates, and investigated their electronic and photovoltaic performance. Pn, np, nn, and pp junctions can be easily realized by modulating the conductive channel type using gate voltages with different polarities. Strong rectification effects were observed in the pn and np junctions and the rectification ratio reached ∼5 × 10(4). Importantly, we find a unique phenomenon that the parameters for MoTe2 LPNJs experience abrupt changes during the transition from p to n or n to p. Furthermore, a high performance photovoltaic device with a filling factor of above 51% and electrical conversion efficiency (η) of around 0.5% is achieved. Our findings are of importance to comprehensively understand the electronic and optoelectronic properties of MoTe2 and may further open up novel electronic and optoelectronic device applications.

  18. Gate-Free Electrical Breakdown of Metallic Pathways in Single-Walled Carbon Nanotube Crossbar Networks.

    PubMed

    Li, Jinghua; Franklin, Aaron D; Liu, Jie

    2015-09-01

    Aligned single-walled carbon nanotubes (SWNTs) synthesized by the chemical vapor deposition (CVD) method have exceptional potential for next-generation nanoelectronics. However, the coexistence of semiconducting (s-) and metallic (m-) SWNTs remains a considerable challenge since the latter causes significant degradation in device performance. Here we demonstrate a facile and effective approach to selectively break all m-SWNTs by stacking two layers of horizontally aligned SWNTs to form crossbars and applying a voltage to the crossed SWNT arrays. The introduction of SWNT junctions amplifies the disparity in resistance between s- and m-pathways, leading to a complete deactivation of m-SWNTs while minimizing the degradation of the semiconducting counterparts. Unlike previous approaches that required an electrostatic gate to achieve selectivity in electrical breakdown, this junction process is gate-free and opens the way for straightforward integration of thin-film s-SWNT devices. Comparison to electrical breakdown in junction-less SWNT devices without gating shows that this junction-based breakdown method yields more than twice the average on-state current retention in the resultant s-SWNT arrays. Systematic studies show that the on/off ratio can reach as high as 1.4 × 10(6) with a correspondingly high retention of on-state current compared to the initial current value before breakdown. Overall, this method provides important insight into transport at SWNT junctions and a simple route for obtaining pure s-SWNT thin film devices for broad applications. PMID:26263184

  19. Characterization of MgO substrates for growth of epitaxial YBCO thin films

    NASA Astrophysics Data System (ADS)

    Du, J.; Gnanarajan, S.; Bendavid, A.

    2005-08-01

    YBCO films were grown on magnesium oxide (MgO) substrates for fabricating step-edge junction SQUIDs and other Josephson junction-based devices. In-plane 45° grain misorientation was frequently observed in films grown on degraded or contaminated MgO substrates. The appearance of these misoriented grains results in a decrease of the thin-film critical-current density and reduces the device yield. In this work, we investigated the chemical properties of MgO substrates with various surface conditions due to different substrate preparation methods and environmental degradation, by using x-ray photoelectron spectroscopy (XPS). The XPS characteristics of the surface are compared before and after a thermal annealing at 760 °C resembling the thin-film deposition heating cycle. The MgO substrates, after lithographic processing or only weeks of exposure to the laboratory environment, showed surface degradation characterized by the presence of hydroxyl groups, carbonate, and other possible carbon compounds such as bicarbonate, alcohols and carboxyl. Heating of the substrates to 760 °C improves the surface quality to a certain degree with the removal of some of the above contaminants, but is not sufficient to recover the MgO surfaces. A final Ar ion-beam etch cleaning process at low ion energy proved to be very effective in refreshing the MgO substrate surface that had been degraded due to lithographic processing or storage. Films grown on MgO with this pre-treatment showed perfect grain alignment and high critical-current densities.

  20. Bipolar resistive switching properties of Ti-CuO/(hexafluoro-hexa-peri-hexabenzocoronene)-Cu hybrid interface device: Influence of electronic nature of organic layer

    NASA Astrophysics Data System (ADS)

    Singh, Bharti; Mehta, B. R.; Varandani, Deepak; Govind; Narita, A.; Feng, X.; Müllen, K.

    2013-05-01

    This study reports the change in the structural and junction properties of Ti-CuO-Cu structure on incorporation of a 2-dimensional (2D) organic layer comprising of n-type hexafluoro-hexa-peri-hexabenzocoronene (6F-HBC). A bipolar resistive switching is observed in the device having interface between sputter deposited copper oxide (CuO) and vacuum sublimated 6F-HBC hybrid interface. The CuO/6F-HBC hybrid interface exhibits rectifying I-V characteristics in complete contrast to the ohmic and rectifying characteristics of junctions based on individual 6F-HBC and CuO layers. Large change in resistive switching property from unipolar resistive switching in CuO/HBC to bipolar resistive switching in CuO/6F-HBC interface was observed. At the CuO/6F-HBC interface, C1s peak corresponding to fluorinated carbon is shifted by 0.68 eV towards higher binding energy (BE) side and O1s peak due to non-lattice oxygen is shifted by 0.6 eV towards lower BE, confirming the interaction of O2- ion in CuO with fluorinated carbon atoms in 6F-HBC at the hybrid interface. Correlation between conductive atomic force microscopy images and atomic force microscopy topography images, I-V characteristics in conducting, non-conducting, and pristine regions along with x-ray photoelectron spectroscopy results establishes the important role of hybrid interface to determining the resistive switching properties. This study demonstrates that the resistive switching and interface properties of a hybrid device based on inorganic and organic 2D materials can be modified by changing the electronic properties of organic layer by attaching suitable functional groups.

  1. Demonstration of 10 K Superconducting Electronics in an Infrared Imaging System

    NASA Astrophysics Data System (ADS)

    Ressler, Michael E.

    1997-04-01

    We report the successful operation of a superconducting niobium nitride (NbN) Josephson Junction-based analog-to-digital converter (ADC) in an infrared imaging system. This system is a flexible testbed which will allow the evaluation of a large variety of cryogenic components (e.g. detector arrays, ADC's, etc.), while still following the general architecture of a scientific instrument, permitting us to determine how well the component will perform in the ``real world''. The testbed is currently composed of a Rockwell International HF-16 128x128 pixel Si:As BIB array, a JPL-developed GaAs 16-to-1 analog multiplexer, and a TRW 12-bit, 10 mega-samples per second, NbN ADC. All three components are located inside a pour/fill liquid helium dewar and operated at 10 K. Simple cold optics along with an 8.5 micron filter image objects onto the focal plane. The images are read out at rates up to 600 frames per second; data can either be stored to hard disk at this rate or every 20th frame can be displayed on a monitor providing ``real-time'' video. We describe the layout and operation of the testbed, with particular emphasis on the lessons learned about operating superconducting electronics as merely another component in a system. We also discuss images and other data comparing the performance of the NbN ADC with a commercially available, equal speed and resolution, silicon ADC. Finally, we explore the future of superconducting electronics; potential products as well as their impact on instrument and spacecraft design.

  2. ZO-1 and -2 Are Required for TRPV1-Modulated Paracellular Permeability.

    PubMed

    Li, J; Cong, X; Zhang, Y; Xiang, R L; Mei, M; Yang, N Y; Su, Y C; Choi, S; Park, K; Zhang, L W; Wu, L L; Yu, G Y

    2015-12-01

    The tight junction-based paracellular pathway plays an important role in saliva secretion. Zonula occludens (ZO) proteins are submembranous proteins of tight junction complex; however, their function in salivary epithelium is poorly understood. Here, we found that activation of transient receptor potential vanilloid subtype 1 (TRPV1) by capsaicin increased rat saliva secretion both in vivo and ex vivo. Meanwhile, TRPV1 activation enlarged the width of tight junctions between neighboring acinar cells, increased the paracellular flux of 4-kDa fluorescein isothiocyanate (FITC)-dextran in submandibular gland (SMG) tissues, and decreased transepithelial electric resistance (TER) in SMG-C6 cells. ZO-1, -2, and -3 were distributed principally to the apical lateral region of acinar cells in SMG tissues and continuously encircled the peripheries of SMG-C6 cells in the untreated condition. TRPV1 activation obviously diminished ZO-1 and -2 staining, but not ZO-3 or β-catenin, at the cell-cell contacts ex vivo and in vitro. Moreover, in untreated SMG-C6 cells, ZO-1 and -2 single or double knockdown by small interfering RNA (siRNA) increased the paracellular flux of 4-kDa FITC-dextran. In capsaicin-treated cells, ZO-1 and -2 single or double knockdown abolished, whereas their re-expression restored, the capsaicin-induced increase in paracellular permeability. Furthermore, TRPV1 activation increased RhoA activity, and inhibition of either RhoA or Rho kinase (ROCK) abolished the capsaicin-induced TER decrease as well as ZO-1 and -2 redistribution. These results indicate that ZO-1 and -2 play crucial roles in both basal salivary epithelial barrier function and TRPV1-modulated paracellular transport. RhoA-ROCK signaling pathway is responsible for TRPV1-modulated paracellular permeability as well as ZO-1 and -2 redistribution.

  3. Many-body theory of electrical, thermal and optical response of molecular heterojunctions

    NASA Astrophysics Data System (ADS)

    Bergfield, Justin Phillip

    In this work, we develop a many-body theory of electronic transport through single molecule junctions based on nonequilibrium Green's functions (NEGFs). The central quantity of this theory is the Coulomb self-energy matrix of the junction SigmaC. SigmaC is evaluated exactly in the sequential-tunneling limit, and the correction due to finite lead-molecule tunneling is evaluated using a conserving approximation based on diagrammatic perturbation theory on the Keldysh contour. In this way, tunneling processes are included to infinite order, meaning that any approximation utilized is a truncation in the physical processes considered rather than in the order of those processes. Our theory reproduces the key features of both the Coulomb blockade and coherent transport regimes simultaneously in a single unified theory. Nonperturbative effects of intramolecular correlations are included, which are necessary to accurately describe the highest occupied molecular orbital (HOMO)-lowest unoccupied molecular orbital (LUMO) gap, essential for a quantitative theory of transport. This work covers four major topics related to transport in single-molecule junctions. First, we use our many-body theory to calculate the nonlinear electrical response of the archetypal Au-1,4-benzenedithiol-Au junction and find irregularly shaped 'molecular diamonds' which have been experimentally observed in some larger molecules but which are inaccessible to existing theoretical approaches. Next, we extend our theory to include heat transport and develop an exact expression for the heat current in an interacting nanostructure. Using this result, we discover that quantum coherence can strongly enhance the thermoelectric response of a device, a result with a number of technological applications. We then develop the formalism to include multi-orbital lead-molecule contacts and multi-channel leads, both of which strongly affect the observable transport. Lastly, we include a dynamic screening correction to

  4. The role of ultra-thin SiO2 layers in metal-insulator-semiconductor (MIS) photoelectrochemical devices (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Esposito, Daniel V.

    2015-08-01

    Solid-state junctions based on a metal-insulator-semiconductor (MIS) architecture are of great interest for a number of optoelectronic applications such as photovoltaics, photoelectrochemical cells, and photodetection. One major advantage of the MIS junction compared to the closely related metal-semiconductor junction, or Schottky junction, is that the thin insulating layer (1-3 nm thick) that separates the metal and semiconductor can significantly reduce the density of undesirable interfacial mid-gap states. The reduction in mid-gap states helps "un-pin" the junction, allowing for significantly higher built-in-voltages to be achieved. A second major advantage of the MIS junction is that the thin insulating layer can also protect the underlying semiconductor from corrosion in an electrochemical environment, making the MIS architecture well-suited for application in (photo)electrochemical applications. In this presentation, discontinuous Si-based MIS junctions immersed in electrolyte are explored for use as i.) photoelectrodes for solar-water splitting in photoelectrochemical cells (PECs) and ii.) position-sensitive photodetectors. The development and optimization of MIS photoelectrodes for both of these applications relies heavily on understanding how processing of the thin SiO2 layer impacts the properties of nano- and micro-scale MIS junctions, as well as the interactions of the insulating layer with the electrolyte. In this work, we systematically explore the effects of insulator thickness, synthesis method, and chemical treatment on the photoelectrochemical and electrochemical properties of these MIS devices. It is shown that electrolyte-induced inversion plays a critical role in determining the charge carrier dynamics within the MIS photoelectrodes for both applications.

  5. Bipolar resistive switching properties of Ti-CuO/(hexafluoro-hexa-peri-hexabenzocoronene)-Cu hybrid interface device: Influence of electronic nature of organic layer

    SciTech Connect

    Singh, Bharti; Mehta, B. R.; Varandani, Deepak; Govind; Narita, A.; Feng, X.; Muellen, K.

    2013-05-28

    This study reports the change in the structural and junction properties of Ti-CuO-Cu structure on incorporation of a 2-dimensional (2D) organic layer comprising of n-type hexafluoro-hexa-peri-hexabenzocoronene (6F-HBC). A bipolar resistive switching is observed in the device having interface between sputter deposited copper oxide (CuO) and vacuum sublimated 6F-HBC hybrid interface. The CuO/6F-HBC hybrid interface exhibits rectifying I-V characteristics in complete contrast to the ohmic and rectifying characteristics of junctions based on individual 6F-HBC and CuO layers. Large change in resistive switching property from unipolar resistive switching in CuO/HBC to bipolar resistive switching in CuO/6F-HBC interface was observed. At the CuO/6F-HBC interface, C1s peak corresponding to fluorinated carbon is shifted by 0.68 eV towards higher binding energy (BE) side and O1s peak due to non-lattice oxygen is shifted by 0.6 eV towards lower BE, confirming the interaction of O{sup 2-} ion in CuO with fluorinated carbon atoms in 6F-HBC at the hybrid interface. Correlation between conductive atomic force microscopy images and atomic force microscopy topography images, I-V characteristics in conducting, non-conducting, and pristine regions along with x-ray photoelectron spectroscopy results establishes the important role of hybrid interface to determining the resistive switching properties. This study demonstrates that the resistive switching and interface properties of a hybrid device based on inorganic and organic 2D materials can be modified by changing the electronic properties of organic layer by attaching suitable functional groups.

  6. Reconfigurable Josephson Circulator/Directional Amplifier

    NASA Astrophysics Data System (ADS)

    Sliwa, K. M.; Hatridge, M.; Narla, A.; Shankar, S.; Frunzio, L.; Schoelkopf, R. J.; Devoret, M. H.

    2015-10-01

    Circulators and directional amplifiers are crucial nonreciprocal signal routing and processing components involved in microwave read-out chains for a variety of applications. They are particularly important in the field of superconducting quantum information, where the devices also need to have minimal photon losses to preserve the quantum coherence of signals. Conventional commercial implementations of each device suffer from losses and are built from very different physical principles, which has led to separate strategies for the construction of their quantum-limited versions. However, as recently theoretically, by establishing simultaneous pairwise conversion and/or gain processes between three modes of a Josephson-junction-based superconducting microwave circuit, it is possible to endow the circuit with the functions of either a phase-preserving directional amplifier or a circulator. Here, we experimentally demonstrate these two modes of operation of the same circuit. Furthermore, in the directional amplifier mode, we show that the noise performance is comparable to standard nondirectional superconducting amplifiers, while in the circulator mode, we show that the sense of circulation is fully reversible. Our device is far simpler in both modes of operation than previous proposals and implementations, requiring only three microwave pumps. It offers the advantage of flexibility, as it can dynamically switch between modes of operation as its pump conditions are changed. Moreover, by demonstrating that a single three-wave process yields nonreciprocal devices with reconfigurable functions, our work breaks the ground for the development of future, more complex directional circuits, and has excellent prospects for on-chip integration.

  7. CellFIT: A Cellular Force-Inference Toolkit Using Curvilinear Cell Boundaries

    PubMed Central

    Brodland, G. Wayne; Veldhuis, Jim H.; Kim, Steven; Perrone, Matthew; Mashburn, David; Hutson, M. Shane

    2014-01-01

    Mechanical forces play a key role in a wide range of biological processes, from embryogenesis to cancer metastasis, and there is considerable interest in the intuitive question, “Can cellular forces be inferred from cell shapes?” Although several groups have posited affirmative answers to this stimulating question, nagging issues remained regarding equation structure, solution uniqueness and noise sensitivity. Here we show that the mechanical and mathematical factors behind these issues can be resolved by using curved cell edges rather than straight ones. We present a new package of force-inference equations and assessment tools and denote this new package CellFIT, the Cellular Force Inference Toolkit. In this approach, cells in an image are segmented and equilibrium equations are constructed for each triple junction based solely on edge tensions and the limiting angles at which edges approach each junction. The resulting system of tension equations is generally overdetermined. As a result, solutions can be obtained even when a modest number of edges need to be removed from the analysis due to short length, poor definition, image clarity or other factors. Solving these equations yields a set of relative edge tensions whose scaling must be determined from data external to the image. In cases where intracellular pressures are also of interest, Laplace equations are constructed to relate the edge tensions, curvatures and cellular pressure differences. That system is also generally overdetermined and its solution yields a set of pressures whose offset requires reference to the surrounding medium, an open wound, or information external to the image. We show that condition numbers, residual analyses and standard errors can provide confidence information about the inferred forces and pressures. Application of CellFIT to several live and fixed biological tissues reveals considerable force variability within a cell population, significant differences between populations

  8. Decoherence and mode-hopping in spin-torque oscillators

    NASA Astrophysics Data System (ADS)

    Muduli, Pranaba

    2013-03-01

    A Spin Torque Oscillator (STO) is a nano-sized magneto-resistive device that can produce microwave signals in the GHz range as a result of spin transfer torque- a phenomena which is receiving increasing importance in contemporary spintronics research both for fundamental spin physics as well as a number of possible microwave applications e.g., oscillator, detectors and modulators. A very important question, both for fundamental physics as well for applications, is what limits the coherence time of the STO. This is a subject of significant interest recently. Until now theoretical studies have investigated decoherence through thermal noise assuming that only a single mode is excited. On the other hand, experiments clearly show both the existence of multiple modes and persistent mode-hopping between several modes. The impact on coherence time of such mode-hopping has been largely unexplored and a theoretical study of its origin is entirely lacking. In this work, we will present first ever systematic experimental investigations of mode hopping, and its impact on the coherence time in a magnetic tunnel junction based spin torque oscillator. We will discuss micromagnetic simulations and a theoretical treatment to show that the non-conservative fields due to finite damping-either positive or negative (spin torque) -couple individual modes and, in the presence of thermal noise, govern the experimentally observed mode-hopping. Using quantitative analysis of both coherence and dwell times, we will show that mode-hopping could be a limiting factor for STO coherence. Finally we show how our theoretical treatment can be extended to the case of a metallic nanocontact based STO, where anomalous temperature dependence of linewidth is found as result of the mode coupling. and Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India

  9. G4-FETs as Universal and Programmable Logic Gates

    NASA Technical Reports Server (NTRS)

    Johnson, Travis; Fijany, Amir; Mojarradi, Mohammad; Vatan, Farrokh; Toomarian, Nikzad; Kolawa, Elizabeth; Cristoloveanu, Sorin; Blalock, Benjamin

    2007-01-01

    An analysis of a patented generic silicon- on-insulator (SOI) electronic device called a G4-FET has revealed that the device could be designed to function as a universal and programmable logic gate. The universality and programmability could be exploited to design logic circuits containing fewer discrete components than are required for conventional transistor-based circuits performing the same logic functions. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET) superimposed in a single silicon island and can therefore be regarded as two transistors sharing the same body. A G4-FET can also be regarded as a single transistor having four gates: two side junction-based gates, a top MOS gate, and a back gate activated by biasing of the SOI substrate. Each of these gates can be used to control the conduction characteristics of the transistor; this possibility creates new options for designing analog, radio-frequency, mixed-signal, and digital circuitry. With proper choice of the specific dimensions for the gates, channels, and ancillary features of the generic G4-FET, the device could be made to function as a three-input, one-output logic gate. As illustrated by the truth table in the top part of the figure, the behavior of this logic gate would be the inverse (the NOT) of that of a majority gate. In other words, the device would function as a NOT-majority gate. By simply adding an inverter, one could obtain a majority gate. In contrast, to construct a majority gate in conventional complementary metal oxide/semiconductor (CMOS) circuitry, one would need four three-input AND gates and a four-input OR gate, altogether containing 32 transistors.

  10. Structure and emplacement of the giant Okavango Dike Swarm in northern Botswana: A new perspective from airborne geophysical data

    NASA Astrophysics Data System (ADS)

    Le Pera, Alan K.

    The mode of emplacement of continental dike swarms extending across large distances remains enigmatic and the subject of debate. Here we examine the 1500 km long WNW-trending Okavango Dike Swarm (ODS) in Botswana, Africa suggested as representing a ~180Ma magmatic-tectonic event associated with the initial thermal weakening phase of Gondwana breakup. Historically, the ODS has been interpreted as a failed rift segment of a triple junction based on its geometric relationship with two other prominent dike swarms. Recent studies suggest instead that the ODS was emplaced along a preexisting Precambrian basement lineament. This work examines the lithospheric structural controls on the emplacement of the ODS using gravity and magnetic data. For this we have established the relationship between crustal heterogeneities and the swarm, identified variations in crustal thickness below the ODS, and determined along-strike variations in Curie point depth. Our results show: (1) no apparent basement structures with the same 110° orientation as the ODS, (2) crustal thickness below the swarm ranges from 39-45 km with an average of 42+/-3 km, indicating the lack of crustal thinning typically associated with rifting, (3) the magnetic basement beneath the swarm extends to a depth of about 24 km and is discontinuous along strike. These high susceptibility axial anomalies conceivably represent fossilized mid-crustal feeder chambers, similar to those found in continental spreading centers such as Afar and Iceland. The lack of significant thinning below the ODS and lack of parallelism with the Precambrian basement fabric suggest the ODS was not associated with a failed rift system and did not actively follow preexisting structures. The ODS is thus interpreted to have been emplaced within the upper crust through magma-enhanced fractures coupled with the presence of a ENE-WSW tensile stress orientation, induced by thermal insulation of the mantle below a stagnant supercontinent and uplift

  11. Experimental and Theoretical Analysis of Nanotransport in Oligophenylene Dithiol Junctions as a Function of Molecular Length and Contact Work Function.

    PubMed

    Xie, Zuoti; Bâldea, Ioan; Smith, Christopher E; Wu, Yanfei; Frisbie, C Daniel

    2015-08-25

    We report the results of an extensive investigation of metal-molecule-metal tunnel junctions based on oligophenylene dithiols (OPDs) bound to several types of electrodes (M1-S-(C6H4)n-S-M2, with 1 ≤ n ≤ 4 and M1,2 = Ag, Au, Pt) to examine the impact of molecular length (n) and metal work function (Φ) on junction properties. Our investigation includes (1) measurements by scanning Kelvin probe microscopy of electrode work function changes (ΔΦ = ΦSAM - Φ) caused by chemisorption of OPD self-assembled monolayers (SAMs), (2) measurements of junction current-voltage (I-V) characteristics by conducting probe atomic force microscopy in the linear and nonlinear bias ranges, and (3) direct quantitative analysis of the full I-V curves. Further, we employ transition voltage spectroscopy (TVS) to estimate the energetic alignment εh = EF - EHOMO of the dominant molecular orbital (HOMO) relative to the Fermi energy EF of the junction. Where photoelectron spectroscopy data are available, the εh values agree very well with those determined by TVS. Using a single-level model, which we justify via ab initio quantum chemical calculations at post-density functional theory level and additional UV-visible absorption measurements, we are able to quantitatively reproduce the I-V measurements in the whole bias range investigated (∼1.0-1.5 V) and to understand the behavior of εh and Γ (contact coupling strength) extracted from experiment. We find that Fermi level pinning induced by the strong dipole of the metal-S bond causes a significant shift of the HOMO energy of an adsorbed molecule, resulting in εh exhibiting a weak dependence with the work function Φ. Both of these parameters play a key role in determining the tunneling attenuation factor (β) and junction resistance (R). Correlation among Φ, ΔΦ, R, transition voltage (Vt), and εh and accurate simulation provide a remarkably complete picture of tunneling transport in these prototypical molecular junctions.

  12. Molecular series-tunneling junctions.

    PubMed

    Liao, Kung-Ching; Hsu, Liang-Yan; Bowers, Carleen M; Rabitz, Herschel; Whitesides, George M

    2015-05-13

    Charge transport through junctions consisting of insulating molecular units is a quantum phenomenon that cannot be described adequately by classical circuit laws. This paper explores tunneling current densities in self-assembled monolayer (SAM)-based junctions with the structure Ag(TS)/O2C-R1-R2-H//Ga2O3/EGaIn, where Ag(TS) is template-stripped silver and EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of insulating molecular units-(CH2)n and (C6H4)m-that are connected in series and have different tunneling decay constants in the Simmons equation. These junctions can be analyzed as a form of series-tunneling junctions based on the observation that permuting the order of R1 and R2 in the junction does not alter the overall rate of charge transport. By using the Ag/O2C interface, this system decouples the highest occupied molecular orbital (HOMO, which is localized on the carboxylate group) from strong interactions with the R1 and R2 units. The differences in rates of tunneling are thus determined by the electronic structure of the groups R1 and R2; these differences are not influenced by the order of R1 and R2 in the SAM. In an electrical potential model that rationalizes this observation, R1 and R2 contribute independently to the height of the barrier. This model explicitly assumes that contributions to rates of tunneling from the Ag(TS)/O2C and H//Ga2O3 interfaces are constant across the series examined. The current density of these series-tunneling junctions can be described by J(V) = J0(V) exp(-β1d1 - β2d2), where J(V) is the current density (A/cm(2)) at applied voltage V and βi and di are the parameters describing the attenuation of the tunneling current through a rectangular tunneling barrier, with width d and a height related to the attenuation factor β. PMID:25871745

  13. Photoelectrochemical Hydrogen Production - Final Report

    SciTech Connect

    Miller, E.L.; Marsen, B.; Paluselli, D.; Rocheleau, R.

    2004-11-17

    The scope of this photoelectrochemical hydrogen research project is defined by multijunction photoelectrode concepts for solar-powered water splitting, with the goal of efficient, stable, and economic operation. From an initial selection of several planar photoelectrode designs, the Hybrid Photoelectrode (HPE) has been identified as the most promising candidate technology. This photoelectrode consists of a photoelectrochemical (PEC) junction and a solid-state photovoltaic (PV) junction. Immersed in aqueous electrolyte and exposed to sunlight, these two junctions provide the necessary voltage to split water into hydrogen and oxygen gas. The efficiency of the conversion process is determined by the performance of the PEC- and the PV-junctions and on their spectral match. Based on their stability and cost effectiveness, iron oxide (Fe2O3) and tungsten oxide (WO3) films have been studied and developed as candidate semiconductor materials for the PEC junction (photoanode). High-temperature synthesis methods, as reported for some high-performance metal oxides, have been found incompatible with multijunction device fabrication. A low-temperature reactive sputtering process has been developed instead. In the parameter space investigated so far, the optoelectronic properties of WO3 films were superior to those of Fe2O3 films, which showed high recombination of photo-generated carriers. For the PV-junction, amorphous-silicon-based multijunction devices have been studied. Tandem junctions were preferred over triple junctions for better stability and spectral matching with the PEC junction. Based on a tandem a-SiGe/a-SiGe device and a tungsten trioxide film, a prototype hybrid photoelectrode has been demonstrated at 0.7% solar-to-hydrogen (STH) conversion efficiency. The PEC junction performance has been identified as the most critical element for higher-efficiency devices. Research into sputter-deposited tungsten trioxide films has yielded samples with higher photocurrents of

  14. Serpentinization of Ocean Core Complex in the Central Indian Ridge: Reactions and Hydrogen Production

    NASA Astrophysics Data System (ADS)

    Omori, S.; Yoshizaki, M.; Shibuya, T.; Suzuki, K.; Yamamoto, S.; Morishita, T.; Kumagai, H.; Maruyama, S.

    2012-12-01

    The submarine hydrothermal system has been considered as a birthplace of life, and it is suggested that hydrothermal alteration of the ocean-floor rocks could influence metabolic system of the early life. The present submarine hydrothermal systems are possible analogs for the early ecosystem, and the serpentinite-hosted system is a candidate for the earliest one. In this study, we report a petrogenetic analysis of a serpentinite sampled from 25 ° S Ocean Core Complex (OCC) near the Rodriguez triple junction, based on textures and compositions of serpentine and other minerals. Phase diagrams for the serpentinite including redox and hydrogen-forming reactions are constructed to interpret the observations. Rodriguez triple junction 25 ° S OCC is located along the Indian Central Ridge (25.5 ° S, 70 ° E), near the Rodriguez triple junction that is formed by three ridges (the Southeast Indian Ridge, Central Indian Ridge, and Southwest Indian Ridge) and located where three plate boundaries (Africa Plate, Indo-Australian Plate, Antarctic Plate) meet. The studied samples are strongly serpentinized, however some relict minerals are preserved (~2%). The alteration minerals are mainly serpentine and magnetite. Most of the serpentine minerals were identified as chrysotile by laser Raman analyses. The relict minerals are orthopyroxene (opx), olivine, clinopyroxene, and spinel. Serpentine shows two types of texture; the one is bustite and the other is mesh texture. Magnetite is found in the mesh texture, and is not present in the bustite. The relict olivine and orthopyroxene were rarely preserved in the center of mesh texture and/or bustite. Size of spinel is 1-2mm, and color of the spinel is brownish-red. Brucite, which is a common product of the abyssal serpentinization, is not observed by optical, SEM, and FE-EPMA analyses. Serpentine minerals were classified into two groups by their chemical compositions; the one is the low-Mg#(90-94) type, which has comparable Mg# with

  15. Visualization of Anatomic Variation of the Anterior Septal Vein on Susceptibility-Weighted Imaging

    PubMed Central

    Chen, Zhengzhen; Qiao, Huihuang; Guo, Yu; Li, Jiance; Miao, Huizhong; Wen, Caiyun; Wen, Xindong; Zhang, Xiaofen; Yang, Xindong; Chen, Chengchun

    2016-01-01

    Background and Purpose Understanding the anatomy of the anterior septal vein (ASV) is critical for minimally invasive procedures to the third ventricle and for assessing lesion size and venous drainage in the anterior cranial fossa. Accordingly, this study evaluated topographic anatomy and anatomic variation of the ASV using susceptibility-weighted imaging (SWI). Methods Sixty volunteers were examined using a 3.0T MR system. The diameter of the ASV and distance between bilateral septal points were measured. ASVs were divided into types 1 (only drains frontal lobe) and 2 (drains both frontal lobe and head of the caudate nucleus). We evaluated the ASV-internal cerebral vein (ICV) junction based on its positional relationship with the appearance of a venous angle or a false venous angle and the foramen of Monro. Fused SW and T1-weighted images were used to observe positional relationships between the course of the ASV and the surrounding brain structures. Results The ASV and its small tributaries were clearly visualized in 120 hemispheres (100%). The average diameter of ASVs was 1.05±0.17 mm (range 0.9–1.6 mm). The average distance between bilateral septal points was 2.23±1.03 mm (range 1.3–6.6 mm). The ASV types 1 and 2 were in 77 (64.2%) and 43 (35.8%) hemispheres, respectively. In 83 (69.2%) hemispheres, the ASV-ICV junction was situated at the venous angle and the posterior margin of the foramen of Monro. In 37 (30.8%) hemispheres, the ASV-ICV junction was situated beyond the posterior margin of the foramen of Monro. The average distance between the posteriorly located ASV-ICV junction and the posterior margin of the foramen of Monro was 6.41±3.95 mm (range 2.4–15.9 mm). Conclusion Using SWI, the topographic anatomy and anatomic variation of the ASV were clearly demonstrated. Preoperative assessment of anatomic variation of the ASV may be advantageous for minimally invasive neurosurgical procedures. PMID:27716782

  16. Quantitation of CYP24A1 Enzymatic Activity With a Simple Two-Hybrid System

    PubMed Central

    Mugg, Amy; Legeza, Balazs; Tee, Meng Kian; Damm, Izabella; Long, Roger K.

    2015-01-01

    Context: Mutations of the CYP24A1 gene encoding the 24-hydroxylase (24OHase) that inactivates metabolites of vitamin D can cause hypercalcemia in infants and adults; in vitro assays of 24OHase activity have been difficult. Objective: We sought an alternative assay to characterize a CYP24A1 mutation in a young adult with bilateral nephrolithiasis and hypercalcemia associated with ingestion of excess vitamin D supplements and robust dairy intake for 5 years. Methods: CYP24A1 exons were sequenced from leukocyte DNA. Wild-type and mutant CYP24A1 cDNAs were expressed in JEG-3 cells, and 24OHase activity was assayed by a two-hybrid system. Results: The CYP24A1 missense mutation L409S was found on only one allele; no other mutation was found in exons or in at least 30 bp of each intron/exon junction. Based on assays of endogenous 24OHase activity and of activity from a transiently transfected CYP24A1 cDNA expression vector, JEG-3 cells were chosen over HepG2, Y1, MA10, and NCI-H295A cells for two-hybrid assays of 24OHase activity. The apparent Michaelis constant, Km(app), was 9.0 ± 2.0 nm for CYP24A1 and 8.6 ± 2.2 nm for its mutant; the apparent maximum velocity, Vmax(app), was 0.71 ± 0.055 d−1 for the wild type and 0.22 ± 0.026 d−1 for the mutant. As assessed by Vmax/Km, the L409S mutant has 32% of wild-type activity (P = .0012). Conclusions: The two-hybrid system in JEG-3 cells provides a simple, sensitive, quantitative assay of 24OHase activity. Heterozygous mutation of CYP24A1 may cause hypercalcemia in the setting of excessive vitamin D intake, but it is also possible that the patient had another, unidentified CYP24A1 mutation on the other allele. PMID:25375986

  17. Efficient G(sup 4)FET-Based Logic Circuits

    NASA Technical Reports Server (NTRS)

    Vatan, Farrokh

    2008-01-01

    A total of 81 optimal logic circuits based on four-gate field-effect transistors (G(sup 4)4FETs) have been designed to implement all Boolean functions of up to three variables. The purpose of this development was to lend credence to the expectation that logic circuits based on G(sup 4)FETs could be more efficient (in the sense that they could contain fewer transistors), relative to functionally equivalent logic circuits based on conventional transistors. A G(sup 4)FET a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET) superimposed in a single silicon island and can therefore be regarded as two transistors sharing the same body. A G(sup 4)FET can also be regarded as a single device having four gates: two side junction-based gates, a top MOS gate, and a back gate activated by biasing of a silicon-on-insulator substrate. Each of these gates can be used to control the conduction characteristics of the transistor; this possibility creates new options for designing analog, radio-frequency, mixed-signal, and digital circuitry. One such option is to design a G(sup 4)FET to function as a three-input NOT-majority gate, which has been shown to be a universal and programmable logic gate. Optimal NOT-majority-gate, G(sup 4)FET-based logic-circuit designs were obtained in a comparative study that also included formulation of functionally equivalent logic circuits based on NOR and NAND gates implemented by use of conventional transistors. In the study, the problem of finding the optimal design for each logic function and each transistor type was solved as an integer-programming optimization problem. Considering all 81 non-equivalent Boolean functions included in the study, it was found that in 63% of the cases, fewer logic gates (and, hence, fewer transistors) would be needed in the G(sup 4)FET-based implementations.

  18. A mathematical formalism for diffusion in crystalline solids incorporating deviations from the Fickian behavior

    NASA Astrophysics Data System (ADS)

    Narayanan, Raghavan S.

    2007-12-01

    incorrect assumption. Finally, a method to design stable triple junctions based on Herring's relation is described and experimental results that demonstrate the occurrence of enhanced diffusion of nickel through triple junctions of copper and diffusion induced triple junction migration are presented.

  19. Mechanistic Basis for the Bypass of a Bulky DNA Adduct Catalyzed by a Y-Family DNA Polymerase.

    PubMed

    Vyas, Rajan; Efthimiopoulos, Georgia; Tokarsky, E John; Malik, Chanchal K; Basu, Ashis K; Suo, Zucai

    2015-09-23

    1-Nitropyrene (1-NP), an environmental pollutant, induces DNA damage in vivo and is considered to be carcinogenic. The DNA adducts formed by the 1-NP metabolites stall replicative DNA polymerases but are presumably bypassed by error-prone Y-family DNA polymerases at the expense of replication fidelity and efficiency in vivo. Our running start assays confirmed that a site-specifically placed 8-(deoxyguanosin-N(2)-yl)-1-aminopyrene (dG(1,8)), one of the DNA adducts derived from 1-NP, can be bypassed by Sulfolobus solfataricus DNA polymerase IV (Dpo4), although this representative Y-family enzyme was paused strongly by the lesion. Pre-steady-state kinetic assays were employed to determine the low nucleotide incorporation fidelity and establish a minimal kinetic mechanism for the dG(1,8) bypass by Dpo4. To reveal a structural basis for dCTP incorporation opposite dG(1,8), we solved the crystal structures of the complexes of Dpo4 and DNA containing a templating dG(1,8) lesion in the absence or presence of dCTP. The Dpo4·DNA-dG(1,8) binary structure shows that the aminopyrene moiety of the lesion stacks against the primer/template junction pair, while its dG moiety projected into the cleft between the Finger and Little Finger domains of Dpo4. In the Dpo4·DNA-dG(1,8)·dCTP ternary structure, the aminopyrene moiety of the dG(1,8) lesion, is sandwiched between the nascent and junction base pairs, while its base is present in the major groove. Moreover, dCTP forms a Watson-Crick base pair with dG, two nucleotides upstream from the dG(1,8) site, creating a complex for "-2" frameshift mutation. Mechanistically, these crystal structures provide additional insight into the aforementioned minimal kinetic mechanism.

  20. Surface engineered two-dimensional and quasi-one-dimensional nanomaterials for electronic and optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Du, Xiang

    CO3) and MoO3, respectively. Cs2CO3 was found to strongly electron dope black phosphorus. The electron mobility of black phosphorus was significantly enhanced to ˜27 cm2V-1s-1 after 10 nm Cs2CO3 modification, indicating a greatly improved electron transport behavior. In contrast, MoO3 decoration demonstrated a giant hole doping effect. In situ PES characterization confirms the interfacial charge transfer between black phosphorus and doping layers. This doping can also modulate the Schottky junctions formed between metal contacts and black phosphorus flakes, and hence to enhance the responsivity of black phosphorus based photodetectors. These findings coupled with the tunable nature of the surface transfer doping scheme ensure black phosphorus as a promising candidate for further complementary logic electronics. Following the same surface transfer doping technique, I will demonstrate a remarkable performance enhancement of graphene/Si Schottky junction based self-powered photodetectors via surface modification with MoO3 thin film. It was found that the photocurrent responsivity of MoO3 doped graphene/Si photodetectors was highly increased under a wide spectrum of illuminated light from ultraviolet to near infrared. The current on-off ratio reached up to ˜104 under illumination of 500 nm light with intensity of ˜62 muWcm-2. More importantly, the external quantum efficiency of graphene/Si devices was significantly enhanced up to ˜80% by almost four times in the visible light region after MoO3 functionalization. The largely improved photodetecting performance originates from the increased Schottky barrier height at the graphene/Si interface as well as the reduced series resistance after MoO3 modification, which was further corroborated by the in situ PES and electrical transport characterizations. These observations promise a simple method to effectively modify the graphene/Si Schottky junction based self-powered photodetectors and thus significantly enhance their

  1. Plasma-Assisted Laser Deposition of High T(c) Oxide Superconducting Thin Films.

    NASA Astrophysics Data System (ADS)

    Witanachchi, Sarath

    1990-01-01

    Since the discovery of the high T_ {rm c} oxide superconductor YBa _2Cu_3O _7 a great deal of attention has been given to the fabrication of superconducting thin films of this material. Thin films of the new superconductor have an immense importance in scientific research, such as microwave, infrared and critical current studies, and also in applications, such as Josephson junction based digital computer circuits, SQUID (Superconducting Quantum Interference Devices), transmission lines, and interconnectors. Integration of these films with semiconductors and multilayer capabilities are important for future practical uses. For most of these applications, a low temperature in-situ fabrication process is designed to obtain smooth surfaces and sharp interfaces. Less than 500^circC growth temperatures would be compatible with the existing semiconductor technology. At the beginning of this research project, the lowest deposition temperature reported for the fabrication of in-situ superconducting films was about 650^circC. Our goal was to develop a technique that would enable us to fabricate in-situ high T_{ rm c} superconducting films at a substrate temperature lower than 650^circC. By incorporating a weak oxygen plasma in the laser evaporation zone, we have been able to develop a novel plasma assisted laser deposition (PLD) technique to grow YBaCuO films that are superconducting in the as-deposited state. Using this technique, good quality superconducting films with mirror -like surfaces have been grown at substrate temperatures as low as 500^circC. YBaCuO films were deposited on single crystal substrates, SrTiO_3, ZrO _2, MgO, sapphire and Si, and also on flexible stainless steel substrates. Films deposited on SrTiO _3 at 500^circC showed a critical temperature of 86K and a critical current of 10^5 A/cm^2 at 80K and 5 times 10^6 A/cm^2 at 4.3K. The possibility of improving the superconducting properties of the films deposited on sapphire, Si, and stainless steel by

  2. Point Defects in Two-Dimensional Layered Semiconductors: Physics and Its Applications

    NASA Astrophysics Data System (ADS)

    Suh, Joonki

    thermoelectric materials are thoroughly investigated. Point defects can potentially beat the undesired coupling, often term "thermoelectric Bermuda triangle", among electrical conductivity, thermal conductivity and thermopower. The maximum thermoelectric performance is demonstrated with an intermediate density of defects when they beneficially and multi-functionally act as electron donors, as well as strongly energy-dependent electron and phonon scatterers. Therefore, this is a good example of how fundamental defect physics can be applied for practical devices toward renewable energy technology. Another interesting field of layered nanomaterials is on transition-metal dichalcogenides (TMDs), sensational candidates for 2D semiconductor physics and applications. At the reduced dimensionality of 2D where a far stronger correlation between point defects and charge carriers is expected, it is studied how chalcogen vacancies alter optical properties of monolayer TMDs. A new, sub-bandgap broad emission lines as well as increase in the overall photoluminescence intensity at low temperatures are reported as a result of high quantum efficiency of excitons, i.e., bound electron-hole pairs, localized at defect sites. On electrical transport, both n- and p-type materials are needed to form junctions and support bipolar carrier conduction while typically only one type of doping is stable for a particular TMD. For example, MoS2 is natively n-type, thus the lack of p-type doping hampers the development of charge-splitting p-n junctions of MoS2. To address this issue, we demonstrate stable p-type conduction in MoS2 by substitutional Nb doping up to the degenerate level. Proof-of-concept, van der Waals p-n homo-junctions based on vertically stacked MoS2 layers are also fabricated which enable gate-tuneable current rectification. Various electronic devices fabricated are stable in ambient air even without additional treatment such as capping layer protection, thanks to the substitutionality nature

  3. Evaluation of Barrett Esophagus by Multiphoton Microscopy

    PubMed Central

    Chen, Jianxin; Wong, Serena; Nathanson, Michael H.; Jain, Dhanpat

    2014-01-01

    epithelial cells, goblet cells, gastric foveolar-type mucous cells, and parietal cells in the area of gastroesophageal junction. Based on the cell types identified, the mucosa was defined as squamous, columnar gastric type (cardia/fundic-type), and metaplastic columnar intestinal-type/BE. Various types of mucosa seen in the study of 35 biopsies included normal squamous mucosa only (n = 14; 40%), gastric cardia-type mucosa only (n = 2; 6%), gastric fundic mucosa (n = 6; 17%), and both squamous and gastric mucosa (n = 13; 37%). Intestinal metaplasia was identified by the presence of goblet cells in 10 of 25 cases (40%) leading to a diagnosis of BE on MPM imaging and only in 7 cases (28%) by histopathology. In 3 of 35 biopsies (9%), clear-cut goblet cells were seen by MPM imaging but not by histopathology, even after the entire tissue block was sectioned. Based on effective 2-photon excitation fluorescence of elastin and second-harmonic generation of collagen, connective tissue in the lamina propria and the basement membrane was also visualized with MPM. Conclusions Multiphoton microscopy has the ability to accurately distinguish squamous epithelium and different cellular elements of the columnar mucosa obtained from biopsies around the gastroesophageal junction, including goblet cells that are important for the diagnosis of BE. Thus, use of MPM in the endoscopy suite might provide immediate microscopic images during endoscopy, improving screening and surveillance of patients with BE. PMID:24476518

  4. Four-Quadrant Analog Multipliers Using G4-FETs

    NASA Technical Reports Server (NTRS)

    Mojarradi, Mohammad; Blalock, Benjamin; Christoloveanu, Sorin; Chen, Suheng; Akarvardar, Kerem

    2006-01-01

    Theoretical analysis and some experiments have shown that the silicon-on-insulator (SOI) 4-gate transistors known as G4-FETs can be used as building blocks of four-quadrant analog voltage multiplier circuits. Whereas a typical prior analog voltage multiplier contains between six and 10 transistors, it is possible to construct a superior voltage multiplier using only four G4-FETs. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET). It can be regarded as a single transistor having four gates, which are parts of a structure that affords high functionality by enabling the utilization of independently biased multiple inputs. The structure of a G4-FET of the type of interest here (see Figure 1) is that of a partially-depleted SOI MOSFET with two independent body contacts, one on each side of the channel. The drain current comprises of majority charge carriers flowing from one body contact to the other that is, what would otherwise be the side body contacts of the SOI MOSFET are used here as the end contacts [the drain (D) and the source (S)] of the G4-FET. What would otherwise be the source and drain of the SOI MOSFET serve, in the G4-FET, as two junction-based extra gates (JG1 and JG2), which are used to squeeze the channel via reverse-biased junctions as in a JFET. The G4-FET also includes a polysilicon top gate (G1), which plays the same role as does the gate in an accumulation-mode MOSFET. The substrate emulates a fourth MOS gate (G2). By making proper choices of G4-FET device parameters in conjunction with bias voltages and currents, one can design a circuit in which two input gate voltages (Vin1,Vin2) control the conduction characteristics of G4-FETs such that the output voltage (Vout) closely approximates a value proportional to the product of the input voltages. Figure 2 depicts two such analog multiplier circuits. In each circuit, there is the following: The input and output

  5. Fabrication, Characterization and Application of Metal-oxide Tunnel Junctions by Anodization

    NASA Astrophysics Data System (ADS)

    Fan, Wenbin

    Metal oxides have become of significant interest due to their wide range of electrical properties showing potential applications to next generation memory and logic devices. Recent advances in oxide growth technology and the discovery of some unique properties of metal oxides have led to a renewed potential for novel device functionality. Electrochemical anodization offers an effective means to produce oxides in terms of cost, convenience and purity. In this dissertation, Reactive Bias Target Ion Beam Deposition (RBTIBD) system and electrochemical anodization have been used to fabricate granular nano-structured metal-oxide lateral junctions based on the transition metals, particularly, vanadium (V) and tantalum (Ta). The electrical transport properties of anodized V and Ta metal-oxide junctions were investigated at various temperatures. The results turned out that these junctions all had very non-linear I-V characteristics indicating tunneling-like behaviors. Anodized Ta junction shown an appreciable non- linear behavior of the temperature-dependent I-V characteristic with a resistance change of nearly two orders of magnitude at T-300K at currents between 0 and 0.1 mA (˜ 1.3x104 A/cm2 or 104 V/cm). The metal-insulator-transition (MIT) was observed in both wire and bulk V junctions at ˜ 80°C. The microstructure of these anodized transition metal films was characterized by Transmission Electron Microscope (TEM), which was consistent with metallic grains embedded in an oxide matrix. Therefore an anodized granular metal film could be treated as a tunnel junction network. Two dominant electron conduction mechanisms were clearly identified by fitting the I(V, T) data of a Ta oxide- metal junction. The first mechanism was a temperature-independent tunneling including F-N and direct tunneling. The second mechanism was the modified temperature-dependent 2-dimentional Mott's variable-range hopping (VRH) model. The classical Simmons' equation was used to quantify the

  6. Point Defects in Two-Dimensional Layered Semiconductors: Physics and Its Applications

    NASA Astrophysics Data System (ADS)

    Suh, Joonki

    thermoelectric materials are thoroughly investigated. Point defects can potentially beat the undesired coupling, often term "thermoelectric Bermuda triangle", among electrical conductivity, thermal conductivity and thermopower. The maximum thermoelectric performance is demonstrated with an intermediate density of defects when they beneficially and multi-functionally act as electron donors, as well as strongly energy-dependent electron and phonon scatterers. Therefore, this is a good example of how fundamental defect physics can be applied for practical devices toward renewable energy technology. Another interesting field of layered nanomaterials is on transition-metal dichalcogenides (TMDs), sensational candidates for 2D semiconductor physics and applications. At the reduced dimensionality of 2D where a far stronger correlation between point defects and charge carriers is expected, it is studied how chalcogen vacancies alter optical properties of monolayer TMDs. A new, sub-bandgap broad emission lines as well as increase in the overall photoluminescence intensity at low temperatures are reported as a result of high quantum efficiency of excitons, i.e., bound electron-hole pairs, localized at defect sites. On electrical transport, both n- and p-type materials are needed to form junctions and support bipolar carrier conduction while typically only one type of doping is stable for a particular TMD. For example, MoS2 is natively n-type, thus the lack of p-type doping hampers the development of charge-splitting p-n junctions of MoS2. To address this issue, we demonstrate stable p-type conduction in MoS2 by substitutional Nb doping up to the degenerate level. Proof-of-concept, van der Waals p-n homo-junctions based on vertically stacked MoS2 layers are also fabricated which enable gate-tuneable current rectification. Various electronic devices fabricated are stable in ambient air even without additional treatment such as capping layer protection, thanks to the substitutionality nature

  7. CONFERENCE SUMMARY: Summary and comment on superconducting analogue electronics research, including materials and fabrication, as presented at ISEC 07

    NASA Astrophysics Data System (ADS)

    Foley, C. P.

    2007-11-01

    -micron Josephson junctions using laser etching (Büttner et al) and the development of passivation layers using amorphous YBCO and SiO2 (Seidel et al) were also presented. Characterization methods using Raman and photo-emission spectroscopy (Kikunaga et al) emerged as fresh approaches. Josephson junction (JJ) research covered the areas of critical current fluctuations where results on Tl-based junctions suggested a 40 times lower δI/Ic, and LTS junctions for voltage standards using a Nb-Si barrier for improved SNS junctions (Kieler et al). Development of MTS junctions based on MgB2 are yet to be realized with the interface barrier appearing to be the limiting factor. HTS Josephson junctions were reviewed by asking the question: `Are all HTS JJs the same?' with a clear `no' as the answer. Research on intrinsic stacked junctions, sub-micron junctions, the manipulation of electronic band structure to increase energy gap and mid-gap states was also presented. Developments in packaging and cooling were not as dominant at this conference as in previous years. However, there was research reported on the importance of non-magnetic structures in packaging, the design of magnetic shielding improvement by using finite element analysis to optimize design (Tanaka et al) and the use of cryocoolers (Vernik et al). SQUID research reported some breakthrough developments with new ideas presented on nano-SQUIDs with the possible detection of a ferritin spin-flip, a successful airborne trial using a rotating gradiometer and the development of a new 4 cm long baseline planar gradiometer, achieving a sensitivity of 35 fT cm-1 Hz-½. Applications in non-destructive evaluation (NDE) covered the use of SQUIDs in the detection of stainless steel foreign objects in food, defects in wire and circuit boards and surface imaging with most developments focusing on potential customer requirements. Biomagnetic applications have continued to be embraced in the use of SQUIDs in MRI (Zotev et al), NMR, MEG

  8. CONFERENCE SUMMARY: Summary and comment on superconducting analogue electronics research, including materials and fabrication, as presented at ISEC 07

    NASA Astrophysics Data System (ADS)

    Foley, C. P.

    2007-11-01

    -micron Josephson junctions using laser etching (Büttner et al) and the development of passivation layers using amorphous YBCO and SiO2 (Seidel et al) were also presented. Characterization methods using Raman and photo-emission spectroscopy (Kikunaga et al) emerged as fresh approaches. Josephson junction (JJ) research covered the areas of critical current fluctuations where results on Tl-based junctions suggested a 40 times lower δI/Ic, and LTS junctions for voltage standards using a Nb-Si barrier for improved SNS junctions (Kieler et al). Development of MTS junctions based on MgB2 are yet to be realized with the interface barrier appearing to be the limiting factor. HTS Josephson junctions were reviewed by asking the question: `Are all HTS JJs the same?' with a clear `no' as the answer. Research on intrinsic stacked junctions, sub-micron junctions, the manipulation of electronic band structure to increase energy gap and mid-gap states was also presented. Developments in packaging and cooling were not as dominant at this conference as in previous years. However, there was research reported on the importance of non-magnetic structures in packaging, the design of magnetic shielding improvement by using finite element analysis to optimize design (Tanaka et al) and the use of cryocoolers (Vernik et al). SQUID research reported some breakthrough developments with new ideas presented on nano-SQUIDs with the possible detection of a ferritin spin-flip, a successful airborne trial using a rotating gradiometer and the development of a new 4 cm long baseline planar gradiometer, achieving a sensitivity of 35 fT cm-1 Hz-½. Applications in non-destructive evaluation (NDE) covered the use of SQUIDs in the detection of stainless steel foreign objects in food, defects in wire and circuit boards and surface imaging with most developments focusing on potential customer requirements. Biomagnetic applications have continued to be embraced in the use of SQUIDs in MRI (Zotev et al), NMR, MEG