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Sample records for nanotunneling junction-based hyperspectal

  1. Nanotunneling Junction-based Hyperspectal Polarimetric Photodetector and Detection Method

    NASA Technical Reports Server (NTRS)

    Son, Kyung-ah (Inventor); Moon, Jeongsun J. (Inventor); Chattopadhyay, Goutam (Inventor); Liao, Anna (Inventor); Ting, David (Inventor)

    2009-01-01

    A photodetector, detector array, and method of operation thereof in which nanojunctions are formed by crossing layers of nanowires. The crossing nanowires are separated by a few nm thick electrical barrier layer which allows tunneling. Each nanojunction is coupled to a slot antenna for efficient and frequency-selective coupling to photo signals. The nanojunctions formed at the intersection of the crossing wires defines a vertical tunneling diode that rectifies the AC signal from a coupled antenna and generates a DC signal suitable for reforming a video image. The nanojunction sensor allows multi/hyper spectral imaging of radiation within a spectral band ranging from terahertz to visible light, and including infrared (IR) radiation. This new detection approach also offers unprecedented speed, sensitivity and fidelity at room temperature.

  2. Hydrogen-induced nanotunnel opening within semiconductor subsurface

    PubMed Central

    Soukiassian, Patrick; Wimmer, Erich; Celasco, Edvige; Giallombardo, Claudia; Bonanni, Simon; Vattuone, Luca; Savio, Letizia; Tejeda, Antonio; Silly, Mathieu; D’angelo, Marie; Sirotti, Fausto; Rocca, Mario

    2013-01-01

    One of the key steps in nanotechnology is our ability to engineer and fabricate low-dimensional nano-objects, such as quantum dots, nanowires, two-dimensional atomic layers or three-dimensional nano-porous systems. Here we report evidence of nanotunnel opening within the subsurface region of a wide band-gap semiconductor, silicon carbide. Such an effect is induced by selective hydrogen/deuterium interaction at the surface, which possesses intrinsic compressive stress. This finding is established with a combination of ab-initio computations, vibrational spectroscopy and synchrotron-radiation-based photoemission. Hydrogen/deuterium-induced puckering of the subsurface Si atoms marks the critical step in this nanotunnel opening. Depending on hydrogen/deuterium coverages, the nanotunnels are either metallic or semiconducting. Dangling bonds generated inside the nanotunnel offer a promising template to capture atoms or molecules. These features open nano-tailoring capabilities towards advanced applications in electronics, chemistry, storage, sensors or biotechnology. Understanding and controlling such a mechanism open routes towards surface/interface functionalization.

  3. Hydrogen-induced nanotunnel opening within semiconductor subsurface

    NASA Astrophysics Data System (ADS)

    Soukiassian, Patrick; Wimmer, Erich; Celasco, Edvige; Giallombardo, Claudia; Bonanni, Simon; Vattuone, Luca; Savio, Letizia; Tejeda, Antonio; Silly, Mathieu; D'Angelo, Marie; Sirotti, Fausto; Rocca, Mario

    2013-11-01

    One of the key steps in nanotechnology is our ability to engineer and fabricate low-dimensional nano-objects, such as quantum dots, nanowires, two-dimensional atomic layers or three-dimensional nano-porous systems. Here we report evidence of nanotunnel opening within the subsurface region of a wide band-gap semiconductor, silicon carbide. Such an effect is induced by selective hydrogen/deuterium interaction at the surface, which possesses intrinsic compressive stress. This finding is established with a combination of ab-initio computations, vibrational spectroscopy and synchrotron-radiation-based photoemission. Hydrogen/deuterium-induced puckering of the subsurface Si atoms marks the critical step in this nanotunnel opening. Depending on hydrogen/deuterium coverages, the nanotunnels are either metallic or semiconducting. Dangling bonds generated inside the nanotunnel offer a promising template to capture atoms or molecules. These features open nano-tailoring capabilities towards advanced applications in electronics, chemistry, storage, sensors or biotechnology. Understanding and controlling such a mechanism open routes towards surface/interface functionalization.

  4. Carbon nanotunnels form from single-walled carbon nanotubes interacting with a diamond (100)-(2 X 1) surface.

    SciTech Connect

    Horner, D. A.; Sternberg, M.; Zapol, P.; Curtiss, L. A.

    2011-08-01

    A quantum chemical study of the interaction of (5,5), (7,7), (9,9) and (8,0) single-walled carbon nanotubes with a clean (100)-(2 x 1) diamond surface is reported. Stable structures with covalent bonds at the interface were found for carbon nanotubes oriented parallel or perpendicular to the dimer rows on the reconstructed (100) surface. The binding energy of the most stable (5,5) nanotube-diamond structure is 1.7 eV/{angstrom}, and is attributed to strong covalent bonds formed between the carbon nanotube and the diamond surface. The structure of the nanotube is distorted by adsorption on the surface such that it adopts a tunnel-like geometry. Two other nanotunnel geometries were found for the (5,5) nanotube, with binding energies of 1.39 and 1.09 eV/{angstrom}. In the most stable (5,5) nanotube-diamond structure the interaction between the nanotube and the diamond surface produces a 0.6 eV band gap near the Fermi level, but the metallic character of the nanotube is maintained in the two other, less strongly bound nanotunnel structures. No charge transfer occurs between the diamond surface and the nanotunnels in any of the three orientations. Binding energies decrease with increases in tube diameter, to the extent that one of the three nanotunnel structures is not formed by (9,9) carbon nanotubes.

  5. Hydrogen-induced nanotunnel structure on the C-terminated β-SiC(0 0 1)-c(2 × 2) surface investigated by ab-initio calculations

    NASA Astrophysics Data System (ADS)

    Rosso, E. F.; Baierle, R. J.; Orellana, W.; Miwa, R. H.

    2015-12-01

    The structural and electronic properties of pristine and H-passivated C-terminated β-SiC(0 0 1)-c(2 × 2) surface are addressed by ab initio calculations. Here, we verify the formation of C chains composed by double-bonded dimers rows (Cdbnd C), separated by triple-bonded bridged dimers (Ctbnd C). The surface states near the bandgap are confined along the Cdbnd C dimer rows, with no electronic contribution from the Ctbnd C bridged dimers. After hydrogenation, the C-chains are strongly modified, forming subsurface voids or nanotunnel (NT) structures. By considering a plausible set of energy release steps for increasing hydrogenation, we obtain a C-rich NT ruled by the Cdbnd C dimer rows. Somewhat similar to that recently reported on the Si-rich termination, but 0.8 eV lower in energy. The electronic band structures of both Si-rich and C-rich NTs have been examined within the hybrid HSE06 functional, which are compared with those previously reported using a semilocal functional.

  6. Junction-based field emission structure for field emission display

    DOEpatents

    Dinh, Long N.; Balooch, Mehdi; McLean, II, William; Schildbach, Marcus A.

    2002-01-01

    A junction-based field emission display, wherein the junctions are formed by depositing a semiconducting or dielectric, low work function, negative electron affinity (NEA) silicon-based compound film (SBCF) onto a metal or n-type semiconductor substrate. The SBCF can be doped to become a p-type semiconductor. A small forward bias voltage is applied across the junction so that electron transport is from the substrate into the SBCF region. Upon entering into this NEA region, many electrons are released into the vacuum level above the SBCF surface and accelerated toward a positively biased phosphor screen anode, hence lighting up the phosphor screen for display. To turn off, simply switch off the applied potential across the SBCF/substrate. May be used for field emission flat panel displays.

  7. Effect of sound on gap-junction-based intercellular signaling: Calcium waves under acoustic irradiation

    NASA Astrophysics Data System (ADS)

    Deymier, P. A.; Swinteck, N.; Runge, K.; Deymier-Black, A.; Hoying, J. B.

    2015-11-01

    We present a previously unrecognized effect of sound waves on gap-junction-based intercellular signaling such as in biological tissues composed of endothelial cells. We suggest that sound irradiation may, through temporal and spatial modulation of cell-to-cell conductance, create intercellular calcium waves with unidirectional signal propagation associated with nonconventional topologies. Nonreciprocity in calcium wave propagation induced by sound wave irradiation is demonstrated in the case of a linear and a nonlinear reaction-diffusion model. This demonstration should be applicable to other types of gap-junction-based intercellular signals, and it is thought that it should be of help in interpreting a broad range of biological phenomena associated with the beneficial therapeutic effects of sound irradiation and possibly the harmful effects of sound waves on health.

  8. Effect of sound on gap-junction-based intercellular signaling: Calcium waves under acoustic irradiation.

    PubMed

    Deymier, P A; Swinteck, N; Runge, K; Deymier-Black, A; Hoying, J B

    2015-01-01

    We present a previously unrecognized effect of sound waves on gap-junction-based intercellular signaling such as in biological tissues composed of endothelial cells. We suggest that sound irradiation may, through temporal and spatial modulation of cell-to-cell conductance, create intercellular calcium waves with unidirectional signal propagation associated with nonconventional topologies. Nonreciprocity in calcium wave propagation induced by sound wave irradiation is demonstrated in the case of a linear and a nonlinear reaction-diffusion model. This demonstration should be applicable to other types of gap-junction-based intercellular signals, and it is thought that it should be of help in interpreting a broad range of biological phenomena associated with the beneficial therapeutic effects of sound irradiation and possibly the harmful effects of sound waves on health.

  9. Paramagnetic molecule induced strong antiferromagnetic exchange coupling on a magnetic tunnel junction based molecular spintronics device.

    PubMed

    Tyagi, Pawan; Baker, Collin; D'Angelo, Christopher

    2015-07-31

    This paper reports our Monte Carlo (MC) studies aiming to explain the experimentally observed paramagnetic molecule induced antiferromagnetic coupling between ferromagnetic (FM) electrodes. Recently developed magnetic tunnel junction based molecular spintronics devices (MTJMSDs) were prepared by chemically bonding the paramagnetic molecules between the FM electrodes along the tunnel junction's perimeter. These MTJMSDs exhibited molecule-induced strong antiferromagnetic coupling. We simulated the 3D atomic model analogous to the MTJMSD and studied the effect of molecule's magnetic couplings with the two FM electrodes. Simulations show that when a molecule established ferromagnetic coupling with one electrode and antiferromagnetic coupling with the other electrode, then theoretical results effectively explained the experimental findings. Our studies suggest that in order to align MTJMSDs' electrodes antiparallel to each other, the exchange coupling strength between a molecule and FM electrodes should be ∼50% of the interatomic exchange coupling for the FM electrodes.

  10. Mode-hopping mechanism generating colored noise in a magnetic tunnel junction based spin torque oscillator

    SciTech Connect

    Sharma, Raghav; Dürrenfeld, P.; Iacocca, E.; Heinonen, O. G.; Åkerman, J.; Muduli, P. K.

    2014-09-29

    The frequency noise spectrum of a magnetic tunnel junction based spin torque oscillator is examined where multiple modes and mode-hopping events are observed. The frequency noise spectrum is found to consist of both white noise and 1/f frequency noise. We find a systematic and similar dependence of both white noise and 1/f frequency noise on bias current and the relative angle between the reference and free layers, which changes the effective damping and hence the mode-hopping behavior in this system. The frequency at which the 1/f frequency noise changes to white noise increases as the free layer is aligned away from the anti-parallel orientation w.r.t the reference layer. These results indicate that the origin of 1/f frequency noise is related to mode-hopping, which produces both white noise as well as 1/f frequency noise similar to the case of ring lasers.

  11. Programmable Schottky Junctions Based on Ferroelectric Gated MoS2 Transistors

    NASA Astrophysics Data System (ADS)

    Xiao, Zhiyong; Song, Jingfeng; Drcharme, Stephen; Hong, Xia

    We report a programmable Schottky junction based on MoS2 field effect transistors with a SiO2 back gate and a ferroelectric copolymer poly(vinylidene-fluoride-trifluorethylene) (PVDF) top gate. We fabricated mechanically exfoliated single layer MoS2 flakes into two point devices via e-beam lithography, and deposited on the top of the devices ~20 nm PVDF thin films. The polarization of the PVDF layer is controlled locally by conducting atomic force microscopy. The devices exhibit linear ID-VD characteristics when the ferroelectric gate is uniformly polarized in one direction. We then polarized the gate into two domains with opposite polarization directions, and observed that the ID-VD characteristics of the MoS2 channel can be modulated between linear and rectified behaviors depending on the back gate voltage. The nonlinear ID-VD relation emerges when half of the channel is in the semiconductor phase while the other half is in the metallic phase, and it can be well described by the thermionic emission model with a Schottky barrier of ~0.5 eV. The Schottky junction can be erased by re-write the entire channel in the uniform polarization state. Our study facilitates the development of programmable, multifunctional nanoelectronics based on layered 2D TMDs..

  12. CMOS Interface Circuits for Spin Tunneling Junction Based Magnetic Random Access Memories

    SciTech Connect

    Saripalli, Ganesh

    2002-01-01

    Magneto resistive memories (MRAM) are non-volatile memories which use magnetic instead of electrical structures to store data. These memories, apart from being non-volatile, offer a possibility to achieve densities better than DRAMs and speeds faster than SRAMs. MRAMs could potentially replace all computer memory RAM technologies in use today, leading to future applications like instan-on computers and longer battery life for pervasive devices. Such rapid development was made possible due to the recent discovery of large magnetoresistance in Spin tunneling junction devices. Spin tunneling junctions (STJ) are composite structures consisting of a thin insulating layer sandwiched between two magnetic layers. This thesis research is targeted towards these spin tunneling junction based Magnetic memories. In any memory, some kind of an interface circuit is needed to read the logic states. In this thesis, four such circuits are proposed and designed for Magnetic memories (MRAM). These circuits interface to the Spin tunneling junctions and act as sense amplifiers to read their magnetic states. The physical structure and functional characteristics of these circuits are discussed in this thesis. Mismatch effects on the circuits and proper design techniques are also presented. To demonstrate the functionality of these interface structures, test circuits were designed and fabricated in TSMC 0.35μ CMOS process. Also circuits to characterize the process mismatches were fabricated and tested. These results were then used in Matlab programs to aid in design process and to predict interface circuit's yields.

  13. High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

    SciTech Connect

    Wu, Y.; Li, X.; Xu, P.; Wang, Y.; Shen, X.; Liu, X.; Yang, Q.; Hasan, T.

    2015-02-02

    We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 μA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 μA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecture offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.

  14. Addressing the challenges of using ferromagnetic electrodes in the magnetic tunnel junction-based molecular spintronics devices

    NASA Astrophysics Data System (ADS)

    Tyagi, Pawan; Friebe, Edward; Baker, Collin

    2015-11-01

    Addressing the challenges of using high-Curie temperature ferromagnetic (FM) electrodes is critical for molecular spintronics devices (MSDs) research. Two FM electrodes simultaneously chemically bonded with a thiol-functionalized molecule can produce novel MSDs to exploring new quantum mechanical phenomenon and computer technologies. For developing a commercially viable MSD, it is crucial to developing a device fabrication scheme that carefully considers FM electrodes' susceptibility to oxidation, chemical etching, and stress-induced deformations during fabrication and usage. This paper studies NiFe, an alloy extensively used in present-day memory devices and high-temperature engineering applications, as a candidate FM electrode for the fabrication of MSDs. Our spectroscopic reflectance studies show that NiFe oxidized aggressively after heating beyond 90 °C. The NiFe surfaces, aged for several months or heated for several minutes below 90 °C, exhibited remarkable electrochemical activity and were found suitable for chemical bonding with the thiol-functionalized molecular device elements. NiFe also demonstrated excellent etching resistance against commonly used solvents and lithography related chemicals. Additionally, NiFe mitigated the adverse effects of mechanical stress by subsiding the stress-induced deformities. A magnetic tunnel junction-based MSD approach was designed by carefully considering the merits and limitations of NiFe. The device fabrication protocol considers the safe temperature limit to avoiding irreversible surface oxidation, the effect of mechanical stresses, surface roughness, and chemical etching. This paper provides foundational experimental insights in realizing a versatile MSD allowing a wide range of transport and magnetic studies.

  15. Model of a tunneling current in a p-n junction based on armchair graphene nanoribbons - an Airy function approach and a transfer matrix method

    NASA Astrophysics Data System (ADS)

    Suhendi, Endi; Syariati, Rifki; Noor, Fatimah A.; Kurniasih, Neny; Khairurrijal

    2014-03-01

    We modeled a tunneling current in a p-n junction based on armchair graphene nanoribbons (AGNRs) by using an Airy function approach (AFA) and a transfer matrix method (TMM). We used β-type AGNRs, in which its band gap energy and electron effective mass depends on its width as given by the extended Huckel theory. It was shown that the tunneling currents evaluated by employing the AFA are the same as those obtained under the TMM. Moreover, the calculated tunneling current was proportional to the voltage bias and inversely with temperature.

  16. Low-energy spectra of differential conductivity and shot noise in tunnel junctions based on superconductors with suppression of the order parameter at the S-N interface

    NASA Astrophysics Data System (ADS)

    Belogolovskii, M.; Zhitlukhina, E.; Egorov, O.

    2016-11-01

    The possibility of an anomalous structure in the differential conductivity of tunnel junctions based on high-temperature superconductors as a result of degradation of their surface layer is analyzed. This feature is in the form of two peaks near an energy gap separated by a region of suppressed conductivity. One peak is usually high and sharp, while the other is much more spread out. Differential conductivity and shot noise spectra in contacts of a normal injector with s- and d-type superconductors are calculated and compared. It is shown that combined measurements of these two characteristics can provide new information on the kinetics of transport processes in these structures.

  17. Model of a tunneling current in a p-n junction based on armchair graphene nanoribbons - an Airy function approach and a transfer matrix method

    SciTech Connect

    Suhendi, Endi; Syariati, Rifki; Noor, Fatimah A.; Khairurrijal; Kurniasih, Neny

    2014-03-24

    We modeled a tunneling current in a p-n junction based on armchair graphene nanoribbons (AGNRs) by using an Airy function approach (AFA) and a transfer matrix method (TMM). We used β-type AGNRs, in which its band gap energy and electron effective mass depends on its width as given by the extended Huckel theory. It was shown that the tunneling currents evaluated by employing the AFA are the same as those obtained under the TMM. Moreover, the calculated tunneling current was proportional to the voltage bias and inversely with temperature.

  18. Three-dimensional Monte Carlo study of three-terminal junctions based on InGaAs/InAlAs heterostructures

    NASA Astrophysics Data System (ADS)

    Sadi, Toufik; Dessenne, François; Thobel, Jean-Luc

    2009-03-01

    We apply a three-dimensional (3D) semiclassical ensemble Monte Carlo simulation method to study T-branch junctions based on InGaAs/InAlAs heterostructures and obtain an accurate insight into the physics behind the operation of such structures. Electron transport in these devices is investigated and their rectifying behavior is demonstrated at 77 and 300 K and for different branch sizes. Detailed device analysis is performed to establish the relationship between the extent of ballistic transport and the rectifying behavior of the junctions and show the influence of surface charge effects, which are carefully included in the model. Results from the simulation of a T-branch junction with a Schottky gate terminal are presented, demonstrating the necessity of using 3D simulation models to study the physics of semiconductor junctions.

  19. Annealing stability of magnetic tunnel junctions based on dual MgO free layers and [Co/Ni] based thin synthetic antiferromagnet fixed system

    NASA Astrophysics Data System (ADS)

    Devolder, T.; Couet, S.; Swerts, J.; Liu, E.; Lin, T.; Mertens, S.; Furnemont, A.; Kar, G.

    2017-03-01

    We study the annealing stability of bottom-pinned perpendicularly magnetized magnetic tunnel junctions based on dual MgO free layers and thin fixed systems comprising a hard [Co/Ni] multilayer antiferromagnetically coupled to thin a Co reference layer and a FeCoB polarizing layer. Using conventional magnetometry and advanced broadband ferromagnetic resonance, we identify the properties of each sub-unit of the magnetic tunnel junction and demonstrate that this material option can ensure a satisfactory resilience to the 400 °C thermal annealing needed in solid-state magnetic memory applications. The dual MgO free layer possesses an anneal-robust 0.4 T effective anisotropy and suffers only a minor increase of its Gilbert damping from 0.007 to 0.010 for the toughest annealing conditions. Within the fixed system, the ferro-coupler and texture-breaking TaFeCoB layer keeps an interlayer exchange above 0.8 mJ/m2, while the Ru antiferrocoupler layer within the synthetic antiferromagnet maintains a coupling above -0.5 mJ/m2. These two strong couplings maintain the overall functionality of the tunnel junction upon the toughest annealing despite the gradual degradation of the thin Co layer anisotropy that may reduce the operation margin in spin torque memory applications. Based on these findings, we propose further optimization routes for the next generation magnetic tunnel junctions.

  20. Application of Hyperspectal Techniques to Monitoring & Management of Invasive Plant Species Infestation

    DTIC Science & Technology

    2008-01-09

    located in different ecoregions of the continental United States allowing the project to test the detectability of invasive plant species that grow...resources allowing rapid growth and accumulation of woody biomass , which enhances fire frequency. Co-occurrence of palo verde and tamarisk in the...The color of a material is defined by the direction of its unit vector in n-dimensional spectral space. The length of the vector relates only to how

  1. Tunnel junction based memristors as artificial synapses

    PubMed Central

    Thomas, Andy; Niehörster, Stefan; Fabretti, Savio; Shepheard, Norman; Kuschel, Olga; Küpper, Karsten; Wollschläger, Joachim; Krzysteczko, Patryk; Chicca, Elisabetta

    2015-01-01

    We prepared magnesia, tantalum oxide, and barium titanate based tunnel junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance change from 10% up to 100%. Utilizing the memristive properties, we looked into the use of the junction structures as artificial synapses. We observed analogs of long-term potentiation, long-term depression and spike-time dependent plasticity in these simple two terminal devices. Finally, we suggest a possible pathway of these devices toward their integration in neuromorphic systems for storing analog synaptic weights and supporting the implementation of biologically plausible learning mechanisms. PMID:26217173

  2. Sub-cycle optical phase control of nanotunnelling in the single-electron regime

    NASA Astrophysics Data System (ADS)

    Rybka, Tobias; Ludwig, Markus; Schmalz, Michael F.; Knittel, Vanessa; Brida, Daniele; Leitenstorfer, Alfred

    2016-10-01

    The high peak electric fields provided by single-cycle light pulses can be harnessed to manipulate and control charge motion in solid-state systems, resulting in electron emission out of metals and semiconductors or high harmonics generation in dielectrics. These processes are of a non-perturbative character and require precise reproducibility of the electric-field profile. Here, we vary the carrier-envelope phase of 6-fs-long near-infrared pulses with pJ-level energy to control electronic transport in a laterally confined nanoantenna with an 8 nm gap. Peak current densities of 50 MA cm-2 are achieved, corresponding to the transfer of individual electrons in a half-cycle period of 2 fs. The observed behaviours are made possible by the strong distortion of the effective tunnelling barrier due to the extreme electric fields that the nanostructure provides and sustains under sub-cycle optical biasing. Operating at room temperature and in a standard atmosphere, the performed experiments demonstrate a robust class of nanoelectronic switches gated by phase-locked optical transients of minute energy content.

  3. Magnetoresistive junctions based on epitaxial graphene and h-BN

    NASA Astrophysics Data System (ADS)

    Yazyev, Oleg; Pasquarello, Alfredo

    2009-03-01

    Using a first-principles approach, we investigate the structural, magnetic and transport properties of interfaces based on epitaxially grown monolayer graphene and hexagonal boron nitride (h-BN) in combination with ferromagnetic transition metals (Fe, Co and Ni). Such structurally well defined interfaces based on (111) fcc or (0001) hcp transition metals can be produced using simple manufacturing processes. Our calculations predict magnetoresistance ratios over 100% for certain junction compositions. In addition, such systems feature strong antiparallel (Fe and Co) and parallel (Ni) exchange coupling across the interface combined with low junction resistance. The predicted properties position such magnetoresistive junctions as an interesting alternative to the currently used giant and tunneling magnetoresistance systems and make them suitable for practical applications.

  4. Magnetic Tunnel Junction-Based On-Chip Microwave Phase and Spectrum Analyzer

    NASA Technical Reports Server (NTRS)

    Fan, Xin; Chen, Yunpeng; Xie, Yunsong; Kolodzey, James; Wilson, Jeffrey D.; Simons, Rainee N.; Xiao, John Q.

    2014-01-01

    A magnetic tunnel junction (MTJ)-based microwave detector is proposed and investigated. When the MTJ is excited by microwave magnetic fields, the relative angle between the free layer and pinned layer alternates, giving rise to an average resistance change. By measuring the average resistance change, the MTJ can be utilized as a microwave power sensor. Due to the nature of ferromagnetic resonance, the frequency of an incident microwave is directly determined. In addition, by integrating a mixer circuit, the MTJ-based microwave detector can also determine the relative phase between two microwave signals. Thus, the MTJ-based microwave detector can be used as an on-chip microwave phase and spectrum analyzer.

  5. Magnetic Tunnel Junction-Based On-Chip Microwave Phase and Spectrum Analyzer

    NASA Technical Reports Server (NTRS)

    Fan, Xin; Chen, Yunpeng; Xie, Yunsong; Kolodzey, James; Wilson, Jeffrey D.; Simons, Rainee N.; Xiao, John Q.

    2014-01-01

    A magnetic tunnel junction (MTJ)-based microwave detector is proposed and investigated. When the MTJ is excited by microwave magnetic fields, the relative angle between the free layer and pinned layer alternates, giving rise to an average resistance change. By measuring the average resistance change, the MTJ can be utilized as a microwave power sensor. Due to the nature of ferromagnetic resonance, the frequency of an incident microwave is directly determined. In addition, by integrating a mixer circuit, the MTJ-based microwave detector can also determine the relative phase between two microwave signals. Thus, the MTJbased microwave detector can be used as an on-chip microwave phase and spectrum analyzer.

  6. Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces

    PubMed Central

    Ngo, Thach D.N.; Chang, Jung-Won; Lee, Kyujoon; Han, Seungju; Lee, Joon Sung; Kim, Young Heon; Jung, Myung-Hwa; Doh, Yong-Joo; Choi, Mahn-Soo; Song, Jonghyun; Kim, Jinhee

    2015-01-01

    Complex oxide systems have attracted considerable attention because of their fascinating properties, including the magnetic ordering at the conducting interface between two band insulators, such as LaAlO3 and SrTiO3. However, the manipulation of the spin degree of freedom at the LaAlO3/SrTiO3 heterointerface has remained elusive. Here, we have fabricated hybrid magnetic tunnel junctions consisting of Co and LaAlO3/SrTiO3 ferromagnets with the insertion of a Ti layer in between, which clearly exhibit magnetic switching and the tunnelling magnetoresistance effect below 10 K. The magnitude and sign of the tunnelling magnetoresistance are strongly dependent on the direction of the rotational magnetic field parallel to the LaAlO3/SrTiO3 plane, which is attributed to a strong Rashba-type spin-orbit coupling in the LaAlO3/SrTiO3 heterostructure. Our study provides a further support for the existence of the macroscopic ferromagnetism at LaAlO3/SrTiO3 heterointerfaces and opens a novel route to realize interfacial spintronics devices. PMID:26268611

  7. Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces

    NASA Astrophysics Data System (ADS)

    Ngo, Thach D. N.; Chang, Jung-Won; Lee, Kyujoon; Han, Seungju; Lee, Joon Sung; Kim, Young Heon; Jung, Myung-Hwa; Doh, Yong-Joo; Choi, Mahn-Soo; Song, Jonghyun; Kim, Jinhee

    2015-08-01

    Complex oxide systems have attracted considerable attention because of their fascinating properties, including the magnetic ordering at the conducting interface between two band insulators, such as LaAlO3 and SrTiO3. However, the manipulation of the spin degree of freedom at the LaAlO3/SrTiO3 heterointerface has remained elusive. Here, we have fabricated hybrid magnetic tunnel junctions consisting of Co and LaAlO3/SrTiO3 ferromagnets with the insertion of a Ti layer in between, which clearly exhibit magnetic switching and the tunnelling magnetoresistance effect below 10 K. The magnitude and sign of the tunnelling magnetoresistance are strongly dependent on the direction of the rotational magnetic field parallel to the LaAlO3/SrTiO3 plane, which is attributed to a strong Rashba-type spin-orbit coupling in the LaAlO3/SrTiO3 heterostructure. Our study provides a further support for the existence of the macroscopic ferromagnetism at LaAlO3/SrTiO3 heterointerfaces and opens a novel route to realize interfacial spintronics devices.

  8. Epidermal cell turnover across tight junctions based on Kelvin's tetrakaidecahedron cell shape

    PubMed Central

    Yokouchi, Mariko; Atsugi, Toru; van Logtestijn, Mark; Tanaka, Reiko J; Kajimura, Mayumi; Suematsu, Makoto; Furuse, Mikio; Amagai, Masayuki; Kubo, Akiharu

    2016-01-01

    In multicellular organisms, cells adopt various shapes, from flattened sheets of endothelium to dendritic neurons, that allow the cells to function effectively. Here, we elucidated the unique shape of cells in the cornified stratified epithelia of the mammalian epidermis that allows them to achieve homeostasis of the tight junction (TJ) barrier. Using intimate in vivo 3D imaging, we found that the basic shape of TJ-bearing cells is a flattened Kelvin's tetrakaidecahedron (f-TKD), an optimal shape for filling space. In vivo live imaging further elucidated the dynamic replacement of TJs on the edges of f-TKD cells that enables the TJ-bearing cells to translocate across the TJ barrier. We propose a spatiotemporal orchestration model of f-TKD cell turnover, where in the classic context of 'form follows function', cell shape provides a fundamental basis for the barrier homeostasis and physical strength of cornified stratified epithelia. DOI: http://dx.doi.org/10.7554/eLife.19593.001 PMID:27894419

  9. A dispersion-engineered Josephson junction-based travelling wave parametric amplifier with low loss dielectric

    NASA Astrophysics Data System (ADS)

    Mutus, J.; White, T.; Hoi, I.-C.; Barends, R.; Campbell, B.; Chen, Y.; Chen, Z.; Chiaro, B.; Fowler, A.; Dunsworth, A.; Jeffrey, E.; Kelly, J.; Megrant, A.; Neill, C.; O'Malley, P. J. J.; Roushan, P.; Quintana, C.; Sank, D.; Vainsencher, A.; Wenner, J.; Gao, J.; Chaudhuri, S.; Cleland, A. N.; Martinis, J. M.

    2015-03-01

    Travelling wave parametric amplifiers (TWPAs) promise wide-band performance with high saturation power for amplifying microwave frequency signals. Designing a TWPA requires a careful balance of many parameters in order to approach quantum-limited noise performance with sufficient gain and saturation power. We present a design based on an LC-ladder transmission line of Josephson junctions and parallel plate capacitors using low-loss amorphous silicon dielectric. Crucially, we have inserted λ / 4 resonators at regular intervals along the transmission line in order maintain the phase matching condition between pump, signal and idler in order to increase gain. The design and performance of the device will be presented, demonstrating high-gain, wide bandwidth and high dynamic range.

  10. Large magnetocapacitance effect in magnetic tunnel junctions based on Debye-Fröhlich model

    SciTech Connect

    Kaiju, Hideo Takei, Masashi; Misawa, Takahiro; Nishii, Junji; Nagahama, Taro; Xiao, Gang

    2015-09-28

    The frequency dependence of tunneling magnetocapacitance (TMC) in magnetic tunnel junctions (MTJs) is investigated theoretically and experimentally. According to the calculation based on Debye-Fröhlich model combined with Julliere formula, the TMC ratio strongly depends on the frequency and it has the maximum peak at a specific frequency. The calculated frequency dependence of TMC is in good agreement with the experimental results obtained in MgO-based MTJs with a tunneling magnetoresistance (TMR) ratio of 108%, which exhibit a large TMC ratio of 155% at room temperature. This calculation also predicts that the TMC ratio can be as large as about 1000% for a spin polarization of 87%, while the TMR ratio is 623% for the same spin polarization. These theoretical and experimental findings provide a deeper understanding on AC spin-dependent transport in the MTJs and will open up wider opportunities for device applications, such as highly sensitive magnetic sensors and impedance-tunable devices.

  11. Normal metal tunnel junction-based superconducting quantum interference proximity transistor

    SciTech Connect

    D'Ambrosio, Sophie Meissner, Martin; Blanc, Christophe; Ronzani, Alberto; Giazotto, Francesco

    2015-09-14

    We report the fabrication and characterization of an alternative design for a superconducting quantum interference proximity transistor (SQUIPT) based on a normal metal (N) probe. The absence of direct Josephson coupling between the proximized metal nanowire and the N probe allows us to observe the full modulation of the wire density of states around zero voltage and current via the application of an external magnetic field. This results into a drastic suppression of power dissipation which can be as low as a few ∼10{sup −17} W. In this context, the interferometer allows an improvement of up to four orders of magnitude with respect to earlier SQUIPT designs and makes it ideal for extra-low power cryogenic applications. In addition, the N-SQUIPT has been recently predicted to be the enabling candidate for the implementation of coherent caloritronic devices based on proximity effect.

  12. Gate-modulated transport properties and mechanism for nanowire cross junction based on SnO2 semiconductor

    NASA Astrophysics Data System (ADS)

    Chen, Xi; Tong, Yanhong; Wang, Guorui; Tang, Qingxin; Liu, Yichun

    2015-12-01

    The transport properties and mechanism of the three-terminal field-effect nanowire cross junction have been systematically investigated. An interesting phenomenon, such as applied voltage bias on nanowire cross junction makes the ON/OFF current ratio of the transistor improved by over 2 orders of magnitude, has been observed. Different from the two-terminal nanowire cross junctions, the cross junction induced potential barrier in three-terminal counterparts is found to be capable to prevent the current of the top semiconductor nanowire from injecting into the bottom nanowire at off state, while to make the current of the top semiconductor nanowire contribute to the current of the bottom nanowire at on state, resulting in the current switch between on state and off state by the gate voltage modulation.

  13. Thermally stable pn-junctions based on a single transparent perovskite semiconductor BaSnO3

    NASA Astrophysics Data System (ADS)

    Kim, Hoon Min; Kim, Useong; Park, Chulkwon; Kwon, Hyukwoo; Char, Kookrin

    2016-05-01

    We report p-doping of the BaSnO3 (BSO) by replacing Ba with K. The activation energy of K-dopants is estimated to be about 0.5 eV. We have fabricated pn junctions by using K-doped BSO as a p-type and La-doped BSO as an n-type semiconductor. I-V characteristics of these devices exhibit an ideal rectifying behavior of pn junctions with the ideality factor between 1 and 2, implying high integrity of the BSO materials. Moreover, the junction properties are found to be very stable after repeated high-bias and high-temperature thermal cycling, demonstrating a large potential for optoelectronic functions.

  14. Magnetic tunnel junction based out-of-plane field sensor with perpendicular magnetic anisotropy in reference layer

    NASA Astrophysics Data System (ADS)

    Lee, Y. C.; Chao, C. T.; Li, L. C.; Suen, Y. W.; Horng, Lance; Wu, Te-Ho; Chang, C. R.; Wu, J. C.

    2015-05-01

    A magnetic tunnel junction (MTJ) with orthogonal magnetic anisotropy and consisting of Ta X/Co40Fe40B20 1.2 (reference)/MgO 2.0/Co20Fe60B20 2.3 (sensing)/Ta 5/Ru 5 (thickness in nanometers), where X ranges from 15 to 30, is proposed and investigated in response to the demand for out-of-plane field sensors. The reference layer with perpendicular magnetic anisotropy (PMA) demonstrates tuneable coercivity ranging from 72 Oe to 175 Oe. The sensing layer exhibits in-plane anisotropy with the avoidance of exchange coupling from the PMA reference layer because of a thick MgO barrier layer. The magnetization reversal behavior of micron scale devices not only corresponds well to the sheet film, but is also independent in terms of shape and size. The magnetoresistance curve exhibits a ratio of ˜27% in the presence of a perpendicular field and is insensitive to the in-plane field. For perpendicular field sensing, the dynamic range with a sensitivity of ˜0.3%/Oe can achieve ±25 Oe with a coercive field of less than 3 Oe. Additionally, even when bias is applied up to 9.1 mV, magnetic fluctuation still stays below 0.15 mOe.

  15. Sub-nanometer atomic layer deposition for spintronics in magnetic tunnel junctions based on graphene spin-filtering membranes.

    PubMed

    Martin, Marie-Blandine; Dlubak, Bruno; Weatherup, Robert S; Yang, Heejun; Deranlot, Cyrile; Bouzehouane, Karim; Petroff, Frédéric; Anane, Abdelmadjid; Hofmann, Stephan; Robertson, John; Fert, Albert; Seneor, Pierre

    2014-08-26

    We report on the successful integration of low-cost, conformal, and versatile atomic layer deposited (ALD) dielectric in Ni–Al2O3–Co magnetic tunnel junctions (MTJs) where the Ni is coated with a spin-filtering graphene membrane. The ALD tunnel barriers, as thin as 0.6 nm, are grown layer-by-layer in a simple, low-vacuum, ozone-based process, which yields high-quality electron-transport barriers as revealed by tunneling characterization. Even under these relaxed conditions, including air exposure of the interfaces, a significant tunnel magnetoresistance is measured highlighting the robustness of the process. The spin-filtering effect of graphene is enhanced, leading to an almost fully inversed spin polarization for the Ni electrode of −42%. This unlocks the potential of ALD for spintronics with conformal, layer-by-layer control of tunnel barriers in magnetic tunnel junctions toward low-cost fabrication and down-scaling of tunnel resistances.

  16. Analysis and simulation of nonlinearity and effects of spontaneous emission in Schottky-junction-based plasmonic amplifiers.

    PubMed

    Livani, Abdolber Mallah; Kaatuzian, Hassan

    2015-07-01

    An amplifier that operates on surface plasmon polaritons has been analyzed and simulated. Nonlinearity behavior and the spontaneous emission effects of the plasmonic amplifier are investigated in this paper. A rate equations approach has been used in which parameters are derived from simulation results of the plasmonic amplifier (Silvaco/ATLAS). Details on the method of this derivation are included, which were not previously reported. Rate equations are solved numerically by MATLAB codes. These codes verify the Silvaco results. The plasmonic amplifier operates on surface plasmons with a free-space wavelength of 1550 nm. Results show that, even without the effect of spontaneous emission, gain of the plasmonic amplifier saturates in high input levels. Saturation power, which can be used for comparing nonlinearity of different amplifiers, is 2.1 dBm for this amplifier. Amplified spontaneous emission reduces the gain of the amplifiers, which is long. There is an optimum value for the length of the amplifier. For the amplifier of this work, the optimum length for the small signal condition is 265 μm.

  17. Investigation of the electrical and ethanol-vapour sensing properties of the junctions based on ZnO nanostructured thin film doped with copper

    NASA Astrophysics Data System (ADS)

    Dimitrov, Dimitre Tz.; Nikolaev, Nikolay K.; Papazova, Karolina I.; Krasteva, Lyudmila K.; Pronin, Igor A.; Averin, Igor A.; Bojinova, Assya S.; Georgieva, Angelina Ts.; Yakushova, Nadejda D.; Peshkova, Tatyana V.; Karmanov, Andrey A.; Kaneva, Nina V.; Moshnikov, Vyacheslav A.

    2017-01-01

    We present the investigation of ethanol sensing properties of the junctions composed by two plane-parallel nanostructured thin film electrodes. One of them consists of pure ZnO and the other one is composed of ZnO doped with Cu. The thickness of the lower layer was kept constant for all of the investigated structures. The thickness of the upper layer was varied. The samples were produced with different thickness of the top layer by changing the numbers of dip-coatings cycles. On produced junction structures we investigate the dependence of the potential difference on the temperature in the air flow and the changes that occur under exposure to flow of air with certain concentration of ethanol vapour. For ZnO/ZnO:Cu junction with top layer produced by two dip-coatings cycles, the potential difference under the air flow were getting more positive values up to 290 °C and then the values were decreasing, while for ZnO/ZnO:Cu junction with top layer produced by three dip-coatings cycles, the potential difference were getting more negative values with increasing the temperature. However in both cases the potential difference increases in value, when the structures are exposed to the vapour of ethanol. On this installation by the exchange the content of gas atmosphere at fixed temperature the ethanol concentration dependence of the potential difference of produced junction structures were evaluated. Both samples have shown nonlinear dependence of signal towards the concentration of ethanol vapour. The observed results for ZnO/ZnO:Cu were compared with those of the junctions composed by layers of ZnO doped with Ga and pure ZnO nanowires. The performed fractal analysis based on the SEM images showed a correlation between the fractal dimension of the surface of the upper layer of the samples and gas-sensitive properties of the sensing structures.

  18. Perpendicular magnetic tunnel junctions based on thin CoFeB free layer and Co-based multilayer synthetic antiferromagnet pinned layers

    NASA Astrophysics Data System (ADS)

    Natarajarathinam, A.; Zhu, R.; Visscher, P. B.; Gupta, S.

    2012-04-01

    We have previously reported on fully perpendicular Co/Pd multilayer (ML)-based CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs). However, Co/Pd ML-based MTJs have rarely exhibited tunneling magnetoresistance (TMR) ratios greater than 10%. This has been attributed to the inability to pull a sufficiently thick CoFeB layer perpendicular on top of MgO, as well as the incomplete bcc templating of CoFeB from MgO owing to the adjacent fcc Co/Pd MLs. Other researchers have used amorphous thin Ta bridge layers to transition between the bcc and fcc layers. Thin CoFeB with various seed or capping layers have also shown fully perpendicular anisotropy, and thus have gained interest in use as a free layer. Here we report on fully perpendicular MTJs of this type, with a thin CoFeB free layer and a Co/Pd ML-based SAF pinned layer with a thin amorphous Ta bridge layer to transition from bcc CoFeB to the fcc multilayers. The experimentally measured M-H loops show excellent agreement with micromagnetic simulations. Current-in-plane tunneling measurements indicated TMR values of nearly 40% for fully perpendicular stacks annealed at 150 °C for 2 h. Annealing at higher temperatures degraded the magnetoresistance for these Co/Pd ML based SAF pinned MTJs.

  19. Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure

    PubMed Central

    Suzuki, D.; Natsui, M.; Mochizuki, A.; Miura, S.; Honjo, H.; Kinoshita, K.; Fukami, S.; Sato, H.; Ikeda, S.; Endoh, T.; Ohno, H.; Hanyu, T.

    2014-01-01

    A compact nonvolatile programmable switch (NVPS) using 90 nm CMOS technology together with perpendicular magnetic tunnel junction (p-MTJ) devices is fabricated for zero-standby-power field-programmable gate array. Because routing information does not change once it is programmed into an NVPS, high-speed read and write accesses are not required and a write-control transistor can be shared among all the NVPSs, which greatly simplifies structure of the NVPS. In fact, the effective area of the proposed NVPS is reduced by 40% compared to that of a conventional MTJ-based NVPS. The instant on/off behavior without external nonvolatile memory access is also demonstrated using the fabricated test chip. PMID:24753634

  20. Investigation of TiO{sub x} barriers for their use in hybrid Josephson and tunneling junctions based on pnictide thin films

    SciTech Connect

    Döring, S. Monecke, M.; Schmidt, S.; Schmidl, F.; Tympel, V.; Seidel, P.; Engelmann, J.; Kurth, F.; Iida, K.; Holzapfel, B.; Haindl, S.; Mönch, I.

    2014-02-28

    We tested oxidized titanium layers as barriers for hybrid Josephson junctions with high I{sub c}R{sub n}-products and for the preparation of junctions for tunneling spectroscopy. For that we firstly prepared junctions with conventional superconductor electrodes, such as lead and niobium, respectively. By tuning the barrier thickness, we were able to change the junction's behavior from a Josephson junction to tunnel-like behavior applicable for quasi-particle spectroscopy. Subsequently, we transferred the technology to junctions using Co-doped BaFe{sub 2}As{sub 2} thin films prepared by pulsed laser deposition as base electrode and evaporated Pb as counter electrode. For barriers with a thickness of 1.5 nm, we observe clear Josephson effects with I{sub c}R{sub n}≈90 μV at 4.2 K. These junctions behave SNS'-like (SNS: superconductor-normal conductor-superconductor) and are dominated by Andreev reflection transport mechanism. For junctions with barrier thickness of 2.0 nm and higher, no Josephson but SIS'- (SIS: superconductor-insulator-superconductor) or SINS'-like (SINS: superconductor-normal conductor-insulator-superconductor) behavior with a tunnel-like conductance spectrum was observed.

  1. Magnetic Tunnel Junction Based Long-Term Short-Term Stochastic Synapse for a Spiking Neural Network with On-Chip STDP Learning

    NASA Astrophysics Data System (ADS)

    Srinivasan, Gopalakrishnan; Sengupta, Abhronil; Roy, Kaushik

    2016-07-01

    Spiking Neural Networks (SNNs) have emerged as a powerful neuromorphic computing paradigm to carry out classification and recognition tasks. Nevertheless, the general purpose computing platforms and the custom hardware architectures implemented using standard CMOS technology, have been unable to rival the power efficiency of the human brain. Hence, there is a need for novel nanoelectronic devices that can efficiently model the neurons and synapses constituting an SNN. In this work, we propose a heterostructure composed of a Magnetic Tunnel Junction (MTJ) and a heavy metal as a stochastic binary synapse. Synaptic plasticity is achieved by the stochastic switching of the MTJ conductance states, based on the temporal correlation between the spiking activities of the interconnecting neurons. Additionally, we present a significance driven long-term short-term stochastic synapse comprising two unique binary synaptic elements, in order to improve the synaptic learning efficiency. We demonstrate the efficacy of the proposed synaptic configurations and the stochastic learning algorithm on an SNN trained to classify handwritten digits from the MNIST dataset, using a device to system-level simulation framework. The power efficiency of the proposed neuromorphic system stems from the ultra-low programming energy of the spintronic synapses.

  2. Modular Nuclease-Responsive DNA Three-Way Junction-Based Dynamic Assembly of a DNA Device and Its Sensing Application.

    PubMed

    Zhu, Jing; Wang, Lei; Xu, Xiaowen; Wei, Haiping; Jiang, Wei

    2016-04-05

    Here, we explored a modular strategy for rational design of nuclease-responsive three-way junctions (TWJs) and fabricated a dynamic DNA device in a "plug-and-play" fashion. First, inactivated TWJs were designed, which contained three functional domains: the inaccessible toehold and branch migration domains, the specific sites of nucleases, and the auxiliary complementary sequence. The actions of different nucleases on their specific sites in TWJs caused the close proximity of the same toehold and branch migration domains, resulting in the activation of the TWJs and the formation of a universal trigger for the subsequent dynamic assembly. Second, two hairpins (H1 and H2) were introduced, which could coexist in a metastable state, initially to act as the components for the dynamic assembly. Once the trigger initiated the opening of H1 via TWJs-driven strand displacement, the cascade hybridization of hairpins immediately switched on, resulting in the formation of the concatemers of H1/H2 complex appending numerous integrated G-quadruplexes, which were used to obtain label-free signal readout. The inherent modularity of this design allowed us to fabricate a flexible DNA dynamic device and detect multiple nucleases through altering the recognition pattern slightly. Taking uracil-DNA glycosylase and CpG methyltransferase M.SssI as models, we successfully realized the butt joint between the uracil-DNA glycosylase and M.SssI recognition events and the dynamic assembly process. Furthermore, we achieved ultrasensitive assay of nuclease activity and the inhibitor screening. The DNA device proposed here will offer an adaptive and flexible tool for clinical diagnosis and anticancer drug discovery.

  3. Design of a low-power nonvolatile flip-flop using three-terminal magnetic-tunnel-junction-based self-terminated mechanism

    NASA Astrophysics Data System (ADS)

    Suzuki, Daisuke; Hanyu, Takahiro

    2017-04-01

    A nonvolatile flip-flop (NV-FF) using a three-terminal magnetic tunnel junction (3T-MTJ)-based self-terminated mechanism is proposed for a low-power logic LSI while maintaining almost the same performance as a conventional CMOS-based logic LSI. The use of a self-terminated mechanism, which continuously monitors the change in MTJ resistance, makes it possible not only to minimize the write energy consumption for the 3T-MTJ device but also to ensure a reliable write. Moreover, since the write current path is separated from the read current path in the 3T-MTJ device, the sensing circuit and the write driver are individually optimized, which makes it possible to minimize the performance overhead due to additional components. As a result, the write energy of the proposed NV-FF is reduced by 69% with a small performance overhead compared with that of a conventional NV-FF using a worst-case-oriented writing scheme.

  4. High-performance giant-magnetoresistance junctions based on the all-Heusler architecture with matched energy bands and Fermi surfaces

    NASA Astrophysics Data System (ADS)

    Bai, Zhaoqiang; Cai, Yongqing; Shen, Lei; Han, Guchang; Feng, Yuanping

    2013-04-01

    We present an all-Heusler architecture which could be used as a rational design scheme for achieving high spin-filter efficiency in the current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices. A Co2MnSi/Ni2NiSi/Co2MnSi trilayer stack is chosen as the prototype of such an architecture, of which the electronic structure and magnetotransport properties are systematically investigated by first principles approaches. Well matched energy bands and Fermi surfaces between the all-Heusler electrode-spacer pair are found, which, in combination with the electrode half-metallicity, indicate large bulk and interfacial spin-asymmetry, high spin-filter efficiency, and consequently good magnetoresistance performance. Transport calculations further confirm the superiority of the all-Heusler architecture over the conventional Heusler/transition-metal structure by comparing their transmission coefficients and interfacial resistances of parallel conduction electrons, as well as the macroscopic current-voltage characteristics. We suggest future theoretical and experimental efforts in developing high-performance all-Heusler CPP-GMR junctions for the read heads of the next generation high-density hard disk drives.

  5. Magnetic Tunnel Junction Based Long-Term Short-Term Stochastic Synapse for a Spiking Neural Network with On-Chip STDP Learning

    PubMed Central

    Srinivasan, Gopalakrishnan; Sengupta, Abhronil; Roy, Kaushik

    2016-01-01

    Spiking Neural Networks (SNNs) have emerged as a powerful neuromorphic computing paradigm to carry out classification and recognition tasks. Nevertheless, the general purpose computing platforms and the custom hardware architectures implemented using standard CMOS technology, have been unable to rival the power efficiency of the human brain. Hence, there is a need for novel nanoelectronic devices that can efficiently model the neurons and synapses constituting an SNN. In this work, we propose a heterostructure composed of a Magnetic Tunnel Junction (MTJ) and a heavy metal as a stochastic binary synapse. Synaptic plasticity is achieved by the stochastic switching of the MTJ conductance states, based on the temporal correlation between the spiking activities of the interconnecting neurons. Additionally, we present a significance driven long-term short-term stochastic synapse comprising two unique binary synaptic elements, in order to improve the synaptic learning efficiency. We demonstrate the efficacy of the proposed synaptic configurations and the stochastic learning algorithm on an SNN trained to classify handwritten digits from the MNIST dataset, using a device to system-level simulation framework. The power efficiency of the proposed neuromorphic system stems from the ultra-low programming energy of the spintronic synapses. PMID:27405788

  6. Peach maturity/quality assessment using hyperspectral imaging-based spatially-resolved technique

    Technology Transfer Automated Retrieval System (TEKTRAN)

    The objective of this research was to measure the absorption and reduced scattering coefficients of peaches, using a hyperspectral imaging-based spatially-resolved method, for their maturity/quality assessment. A newly developed optical property measuring instrument was used for acquiring hyperspect...

  7. A 600-µW ultra-low-power associative processor for image pattern recognition employing magnetic tunnel junction-based nonvolatile memories with autonomic intelligent power-gating scheme

    NASA Astrophysics Data System (ADS)

    Ma, Yitao; Miura, Sadahiko; Honjo, Hiroaki; Ikeda, Shoji; Hanyu, Takahiro; Ohno, Hideo; Endoh, Tetsuo

    2016-04-01

    A novel associative processor using magnetic tunnel junction (MTJ)-based nonvolatile memories has been proposed and fabricated under a 90 nm CMOS/70 nm perpendicular-MTJ (p-MTJ) hybrid process for achieving the exceptionally low-power performance of image pattern recognition. A four-transistor 2-MTJ (4T-2MTJ) spin transfer torque magnetoresistive random access memory was adopted to completely eliminate the standby power. A self-directed intelligent power-gating (IPG) scheme specialized for this associative processor is employed to optimize the operation power by only autonomously activating currently accessed memory cells. The operations of a prototype chip at 20 MHz are demonstrated by measurement. The proposed processor can successfully carry out single texture pattern matching within 6.5 µs using 128-dimension bag-of-feature patterns, and the measured average operation power of the entire processor core is only 600 µW. Compared with the twin chip designed with 6T static random access memory, 91.2% power reductions are achieved. More than 88.0% power reductions are obtained compared with the latest associative memories. The further power performance analysis is discussed in detail, which verifies the special superiority of the proposed processor in power consumption for large-capacity memory-based VLSI systems.

  8. Fabrication of a magnetic-tunnel-junction-based nonvolatile logic-in-memory LSI with content-aware write error masking scheme achieving 92% storage capacity and 79% power reduction

    NASA Astrophysics Data System (ADS)

    Natsui, Masanori; Tamakoshi, Akira; Endoh, Tetsuo; Ohno, Hideo; Hanyu, Takahiro

    2017-04-01

    A magnetic-tunnel-junction (MTJ)-based video coding hardware with an MTJ-write-error-rate relaxation scheme as well as a nonvolatile storage capacity reduction technique is designed and fabricated in a 90 nm MOS and 75 nm perpendicular MTJ process. The proposed MTJ-oriented dynamic error masking scheme suppresses the effect of write operation errors on the operation result of LSI, which results in the increase in an acceptable MTJ write error rate up to 7.8 times with less than 6% area overhead, while achieving 79% power reduction compared with that of the static-random-access-memory-based one.

  9. Continuously-tuned tunneling behaviors of ferroelectric tunnel junctions based on BaTiO{sub 3}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3} heterostructure

    SciTech Connect

    Ou, Xin; Xu, Bo Yin, Qiaonan; Xia, Yidong; Yin, Jiang; Liu, Zhiguo; Gong, Changjie; Lan, Xuexin

    2014-05-15

    In this work, we fabricate BaTiO{sub 3}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (BTO/LSMO) ferroelectric tunnel junction on (001) SrTiO{sub 3} substrate by pulsed laser deposition method. Combining piezoresponse force and conductive-tip atomic force microscopy, we demonstrate robust and reproducible polarization-controlled tunneling behaviors with the resulting tunneling electroresistance value reaching about 10{sup 2} in ultrathin BTO films (∼1.2 nm) at room temperature. Moreover, local poling areas with different conductivity are finally achieved by controlling the relative proportion of upward and downward domains, and different poling areas exhibit stable transport properties.

  10. Correlation analysis of simulated MODIS vegetation indices and the red edge and rice agricultural parameter

    NASA Astrophysics Data System (ADS)

    Cheng, Qian; Wu, Xiuju

    2007-10-01

    In this study, Hyperspectral data of two variety of rice (common rice and hybrid rice) in whole growing stage during 2002 and 2003 was measured using the ASD FieldSpec UV/VNIR Spectroradiometer with resolution of 3 nm, and the LAI and leaf chlorophyll content of rice agricultural parameter were obtained. Analyses of the correlation between rice agricultural parameter, and hyperspectal data, normalized difference vegetation index (NDVI), enhanced vegetation index (EVI) and the red-edge position (REP) were studied. Results showed that a strong non-linear correlation was found between the rice LAI of two varieties and REP. The REP, EVI and NDVI were well related with LAI for the common rice, but the REP and EVI were more sensitive than the NDVI to rice LAI for the hybrid rice because of different body for two variety rice.

  11. Multifractal analysis of satellite images. (Polish Title: Multifraktalna analiza zobrazowan satelitarnych)

    NASA Astrophysics Data System (ADS)

    Wawrzaszek, A.; Krupiński, M.; Drzewiecki, W.; Aleksandrowicz, S.

    2015-12-01

    Research presented in this paper is focused on the efficiency assessment of multifractal description as a tool for Image Information Mining. Large datasets of very high spatial resolution satellite images (WorldView-2 and EROS-A) have been analysed. The results have confirmed the superiority of multifractals as global image descriptors in comparison to monofractals. Moreover, their usefulness in image classification by using decision trees classifiers was confirmed, also in comparison with textural features. Filtration process preceding fractal and multifractal features estimations was also proved to improve classification results. Additionally, airborne hyperspectral data have been initially analysed. Fractal dimension shows high potential for the description of hyperspectral data. To summarise all conducted tests indicate the usefulness of multifractal formalism in various aspects of remote sensing. Prepared methodology can be further developed and used for more specific tasks, for example in change detection or in the description of hyperspectal data complexity.

  12. Theory of back-surface-field solar cells

    NASA Technical Reports Server (NTRS)

    Vonroos, O.

    1979-01-01

    Report describes simple concise theory of back-surface-field (BSF) solar cells (npp + junctions) based on Shockley's depletion-layer approximation and cites superiority of two-junction devices over conventional unijunction cells.

  13. Characterization of Microdialysis Acidification for Capillary Isoelectric Focusing Microelectrospray Ionization Mass Spectrometry

    SciTech Connect

    Yang, Liyu; Lee, Cheng S.; Hofstadler, Steven A. ); Smith, Richard D. )

    1998-01-01

    A microdialysis junction, based on a microdialysis membrane connecting a separate capillary and a short, sharply tapered microelectrospray emitter capillary, is demonstrated for on-line combination of capillary isoelectric focusing (CIEF) with electrospray ionization mass spectrometry (ESI-MS).

  14. [Advance in the study of the powdered weathering profile of sandstone on China Yungang Grottoes based on VIS/NIR hyperspectral imaging].

    PubMed

    Zhou, Xiao; Gao, Feng; Zhang, Ai-wu; Zhou, Ke-chao

    2012-03-01

    Yungang Grottoes were built in the mid-5th century A. D., and named as a UNESCO World Heritage site in 2001. Most of the grottoes were built on the feldspathic quartz sandstones. They were seriously damaged due to the environmental impact. The main form of the weathering is the powdered weathering. The weathering conditions are generally characterized by electrical sounding, penetration resistance, molecular spectroscopy, etc. However, although these methods can give good results about the weathering conditions for a specified sample or site, they are not suitable for providing a global profile of the weathering conditions. The present paper provides a method for effectively and roundly assessing the overall powdered weathering conditions of the Yungang Grottoes based on hyperspectral imaging. Powdered weathering could change the structure and granularity of the sandstone, and thus change the spectral reflectance of the sandstone surface. Based on the hyperspectral data collected from 400 nm to 1 000 nm and normalized by log residuals method, the powdered weathering conditions of the sandstones were classified into strong weathering and weak weathering. The weathering profile was also mapped in the Envi platform. The mapping images were verified using the measured hyperspectal data of the columns in front of the 9th and 10th grottoes as the examples. The mapping images were substantially fitted to the real observations, showing that hyperspectral imaging can be used to estimate the overall powdered weathering of the sandstones.

  15. Research on method of geometry and spectral calibration of pushbroom dispersive hyperspectral imager

    NASA Astrophysics Data System (ADS)

    He, Zhiping; Shu, Rong; Wang, Jianyu

    2012-11-01

    Development and application of airborne and aerospace hyperspectral imager press for high precision geometry and spectral calibration of pixels of image cube. The research of geometry and spectral calibration of pushbroom hyperspectral imager, its target is giving the coordinate of angle field of view and center wavelength of each detect unit in focal plane detector of hyperspectral imager, and achieves the high precision, full field of view, full channel geometry and spectral calibration. It is importance for imaging quantitative and deep application of hyperspectal imager. The paper takes the geometry and spectral calibration of pushbroom dispersive hyperspectral imager as case study, and research on the constitution and analysis of imaging mathematical model. Aimed especially at grating-dispersive hyperspectral imaging, the specialty of the imaging mode and dispersive method has been concretely analyzed. Based on the analysis, the theory and feasible method of geometry and spectral calibration of dispersive hyperspectral imager is set up. The key technique has been solved is As follows: 1). the imaging mathematical model and feasible method of geometry and spectral calibration for full pixels of image cube has been set up, the feasibility of the calibration method has been analyzed. 2). the engineering model and method of the geometry and spectral calibration of pushbroom dispersive hyperspectral imager has been set up and the calibration equipment has been constructed, and the calibration precision has been analyzed.

  16. Server-side Filtering and Aggregation within a Distributed Environment

    NASA Astrophysics Data System (ADS)

    Currey, J. C.; Bartle, A.

    2015-12-01

    Intercalibration, validation, and data mining use cases require more efficient access to the massive volumes of observation data distributed across multiple agency data centers. The traditional paradigm of downloading large volumes of data to a centralized server or desktop computer for analysis is no longer viable. More analysis should be performed within the host data centers using server-side functions. Many comparative analysis tasks require far less than 1% of the available observation data. The Multi-Instrument Intercalibration (MIIC) Framework provides web services to find, match, filter, and aggregate multi-instrument observation data. Matching measurements from separate spacecraft in time, location, wavelength, and viewing geometry is a difficult task especially when data are distributed across multiple agency data centers. Event prediction services identify near coincident measurements with matched viewing geometries near orbit crossings using complex orbit propagation and spherical geometry calculations. The number and duration of event opportunities depend on orbit inclinations, altitude differences, and requested viewing conditions (e.g., day/night). Event observation information is passed to remote server-side functions to retrieve matched data. Data may be gridded, spatially convolved onto instantaneous field-of-views, or spectrally resampled or convolved. Narrowband instruments are routinely compared to hyperspectal instruments such as AIRS and CRIS using relative spectral response (RSR) functions. Spectral convolution within server-side functions significantly reduces the amount of hyperspectral data needed by the client. This combination of intelligent selection and server-side processing significantly reduces network traffic and data to process on local servers. OPeNDAP is a mature networking middleware already deployed at many of the Earth science data centers. Custom OPeNDAP server-side functions that provide filtering, histogram analysis (1D

  17. Computer Architecture for Energy Efficient SFQ

    DTIC Science & Technology

    2014-08-27

    junctions, minimum, which is 3-4 orders of magnitude greater than any superconducting electronics circuit which has been successfully built to date. On...parity between transistor and Josephson junction counts, this constitutes a chip which is complex by historical superconducting logic standards, but...Josephson junction-based drivers are used to write flux quanta into superconducting loops used in cross-point addressable memory arrays. Figure 4

  18. Electronic Properties of Grain Boundaries in GaAs: A Study of Oriented Bicrystals Prepared by Epitaxial Lateral Overgrowth.

    DTIC Science & Technology

    1984-05-10

    formed near the illuminated surface, an ohmic contact bar and fingers on this surface, and an ohmic contact covering the entire back surface. The basic...EFECTION COATING TOP LAYER (n -Regioni JUNCTION BASE LAYER lp-Region) BACK CONTACT Fig. 2-1. Diagram of typical jun~ction photovoltaic device. 7 and Ao...the homojunction structure discussed above, other photovoltaic device structures have been fabricated (such as Schottky barrier , metal-insulator

  19. Automated position control of a surface array relative to a liquid microjunction surface sampler

    DOEpatents

    Van Berkel, Gary J.; Kertesz, Vilmos; Ford, Michael James

    2007-11-13

    A system and method utilizes an image analysis approach for controlling the probe-to-surface distance of a liquid junction-based surface sampling system for use with mass spectrometric detection. Such an approach enables a hands-free formation of the liquid microjunction used to sample solution composition from the surface and for re-optimization, as necessary, of the microjunction thickness during a surface scan to achieve a fully automated surface sampling system.

  20. Josephson junction microwave modulators for qubit control

    NASA Astrophysics Data System (ADS)

    Naaman, O.; Strong, J. A.; Ferguson, D. G.; Egan, J.; Bailey, N.; Hinkey, R. T.

    2017-02-01

    We demonstrate Josephson junction based double-balanced mixer and phase shifter circuits operating at 6-10 GHz and integrate these components to implement both a monolithic amplitude/phase vector modulator and an I/Q quadrature mixer. The devices are actuated by flux signals, dissipate no power on chip, exhibit input saturation powers in excess of 1 nW, and provide cryogenic microwave modulation solutions for integrated control of superconducting qubits.

  1. Quantifying the variability of surface reflectance and estimating canopy chlorophyll content and green leaf biomass using hyperspectral close-range data and airborne imagery

    NASA Astrophysics Data System (ADS)

    Razzaghi, Tarlan

    Advances in agricultural studies have benefited from the use of remote sensing in generating and analyzing datasets, efficiently. Remotely sensed images facilitate a diverse array of non-intrusive agricultural investigations including new approaches such as high-throughput phenotyping. This research examines the variability of surface reflectance and estimates two biophysical parameters associated with crops. The first goal of the project was to provide an estimation of reflectance variability within low-resolution satellite imagery. The quantified variability of intra-pixel spectral reflectance can then be used to determine the level of uncertainty in estimating biophysical characteristics of plants. The study revealed how the variability in a composite spectral signal emanating from a large pixel was influenced by crop type, phenological stage, and irrigation method. A second goal of this study was to examine algorithms developed using multi-temporal airborne hyperspectal imagery for estimation and mapping of canopy Chl content in irrigated and rainfed maize and soybean fields. The optimal spectral range for two conceptual models, Chlorophyll Index and Normalized Difference, were determined and calibrated for the spectral bands of AISA, Sentinel-2 MSI and Sentinel-3 OLCI sensors. The results showed that CI red edge model derived solely from airborne imagery was capable of accurately estimating canopy Chl in fields with different crop management practices, field history and climatic conditions. The spatial and temporal dynamics of canopy Chl content were elucidated for maize and soybean fields at different phenological stages and rainfall regimes. The final goal of this study was to evaluate the performance of several vegetation indices for estimating green leaf biomass (GLB) in maize and soybean fields using canopy reflectance collected at close-range and airborne imagery. It was determined that models containing red edge and near-infrared bands were capable of

  2. Potential Application of Novel Hyperspectral LIDAR for Monitoring Crops Nitrogen Stress

    NASA Astrophysics Data System (ADS)

    Shi, Shuo; Gong, Wei; Du, Lin; Sun, Jia; Yang, Jian

    2016-06-01

    Precision agriculture has always been the research hotspot around the world. And the optimization of nitrogen fertilization for crops is the core concerns. It is not only to improve the productivity of crops but also to avoid the environmental risks caused by over-fertilization. Therefore, accurate estimation of nitrogen status is crucial for determining an nitrogen recommendation. Remote sensing techniques have been widely used to monitor crops for years, and they could offer estimations for stress status diagnosis through obtaining vertical structure parameters and spectral reflectance properties of crops. As an active remote sensing technology, lidar is particularly attractive for 3-dimensional information at a high point density. It has unique edges in obtaining vertical structure parameters of crops. However, capability of spectral reflectance properties is what the current lidar technology lacks because of single wavelength detection. To solve this problem, the concept of novel hyperspectral lidar (HSL), which combines the advantages of hyperspectal reflectance with high 3-dimensional capability of lidar, was proposed in our study. The design of instrument was described in detail. A broadband laser pulse was emitted and reflectance spectrum with 32 channels could be detected. Furthermore, the experiment was carried out by the novel HSL system to testify the potential application for monitoring nitrogen stress. Rice under different levels of nitrogen fertilization in central China were selected as the object of study, and four levels of nitrogen fertilization (N1-N4) were divided. With the detection of novel lidar system, high precision structure parameters of crops could be provided. Meanwhile, spectral reflectance properties in 32 wavebands were also obtained. The high precision structure parameters could be used to evaluate the stress status of crops. And abundant spectral information in 32 wavebands could improve the capacity of lidar system significantly

  3. Hyper-Cam automated calibration method for continuous hyperspectral imaging measurements

    NASA Astrophysics Data System (ADS)

    Gagnon, Jean-Philippe; Habte, Zewdu; George, Jacks; Farley, Vincent; Tremblay, Pierre; Chamberland, Martin; Romano, Joao; Rosario, Dalton

    2010-04-01

    COTS hyperspectal sensors that allows for full autonomous data collection capability for the user. The accuracy of the automatic calibration was characterized and is presented in this paper.

  4. Challenges in collecting hyperspectral imagery of coastal waters using Unmanned Aerial Vehicles (UAVs)

    NASA Astrophysics Data System (ADS)

    English, D. C.; Herwitz, S.; Hu, C.; Carlson, P. R., Jr.; Muller-Karger, F. E.; Yates, K. K.; Ramsewak, D.

    2013-12-01

    Airborne multi-band remote sensing is an important tool for many aquatic applications; and the increased spectral information from hyperspectral sensors may increase the utility of coastal surveys. Recent technological advances allow Unmanned Aerial Vehicles (UAVs) to be used as alternatives or complements to manned aircraft or in situ observing platforms, and promise significant advantages for field studies. These include the ability to conduct programmed flight plans, prolonged and coordinated surveys, and agile flight operations under difficult conditions such as measurements made at low altitudes. Hyperspectral imagery collected from UAVs should allow the increased differentiation of water column or shallow benthic communities at relatively small spatial scales. However, the analysis of hyperspectral imagery from airborne platforms over shallow coastal waters differs from that used for terrestrial or oligotrophic ocean color imagery, and the operational constraints and considerations for the collection of such imagery from autonomous platforms also differ from terrestrial surveys using manned aircraft. Multispectral and hyperspectral imagery of shallow seagrass and coral environments in the Florida Keys were collected with various sensor systems mounted on manned and unmanned aircrafts in May 2012, October 2012, and May 2013. The imaging systems deployed on UAVs included NovaSol's Selectable Hyperspectral Airborne Remote-sensing Kit (SHARK), a Tetracam multispectral imaging system, and the Sunflower hyperspectal imager from Galileo Group, Inc. The UAVs carrying these systems were Xtreme Aerial Concepts' Vision-II Rotorcraft UAV, MLB Company's Bat-4 UAV, and NASA's SIERRA UAV, respectively. Additionally, the Galileo Group's manned aircraft also surveyed the areas with their AISA Eagle hyperspectral imaging system. For both manned and autonomous flights, cloud cover and sun glint (solar and viewing angles) were dominant constraints on retrieval of quantitatively

  5. High field magnetic resonance imaging of normal and pathologic human medulla oblongata.

    PubMed

    Vandersteen, M; Beuls, E; Gelan, J; Adriaensens, P; Vanormelingen, L; Palmers, Y; Freling, G

    1994-02-01

    High field proton magnetic resonance (MR) imaging has been applied to depict the MR appearance of the normal excised human cervicomedullary junction, based on which neuropathologic specimens can be described. More specifically, two normal cases and one case of Chiari deformity were imaged in the transverse, sagittal, and coronal dimensions using a 9.4 Tesla vertical bore magnet. The MR images of the normal specimens reveal most of the neuroanatomical microstructures described in literature. An accurate description of the Chiari deformity could be made by comparing the MR reference images with those of the pathologic specimen. All MR detected abnormalities were confirmed by histopathology, by which no additional lesions could be found.

  6. Molecular modeling of inelastic electron transport in molecular junctions

    NASA Astrophysics Data System (ADS)

    Jiang, Jun; Kula, Mathias; Luo, Yi

    2008-09-01

    A quantum chemical approach for the modeling of inelastic electron tunneling spectroscopy of molecular junctions based on scattering theory is presented. Within a harmonic approximation, the proposed method allows us to calculate the electron-vibration coupling strength analytically, which makes it applicable to many different systems. The calculated inelastic electron transport spectra are often in very good agreement with their experimental counterparts, allowing the revelation of detailed information about molecular conformations inside the junction, molecule-metal contact structures, and intermolecular interaction that is largely inaccessible experimentally.

  7. [Prescription parsing of miao medicine Polygonum capitatum and kelintong capsule].

    PubMed

    Hu, Nan; Tang, Shi-Huan; Cheng, Long

    2014-04-01

    By literature survey searching references and parsing prescriptions, the auther has analyze the clinical advantage of Miao medicine in the treatment of symptom heat stranguria. Guizhou Miao medicine Polygonum capitatum has many advantages such as resources and clinical. After companying with Phellodendri Cortex, the compound prescription plays the pharmacological activity of antipyretic and diuretic, especially for the symptom heat stranguria, damp and hot junction based in the bladder. Miao medicine Kelintong capsule showed clinical advantage in the treatment of symptom heat stranguria, having a clinical advantage in improving the overall effectiveness and improve the overall aspects of the patient's symptoms.

  8. Engineering ferroelectric tunnel junctions through potential profile shaping

    SciTech Connect

    Boyn, S.; Garcia, V. Fusil, S.; Carrétéro, C.; Garcia, K.; Collin, S.; Deranlot, C.; Bibes, M.; Barthélémy, A.

    2015-06-01

    We explore the influence of the top electrode materials (W, Co, Ni, Ir) on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO{sub 3}. Large variations of the transport properties are observed at room temperature. In particular, the analysis of current vs. voltage curves by a direct tunneling model indicates that the metal/ferroelectric interfacial barrier height increases with the top-electrode work function. While larger metal work functions result in larger OFF/ON ratios, they also produce a large internal electric field which results in large and potentially destructive switching voltages.

  9. Solar cells made by laser-induced diffusion directly from phosphine gas

    SciTech Connect

    Turner, G.B.; Tarrant, D.; Pollock, G.; Pressley, R.; Press, R.

    1981-12-15

    A new method for making p-n junctions based on immersion in a transparent dopant gas followed by irradiation with a pulsed laser is presented. An alexandrite laser was used, operating at 0.73 ..mu..m where photolysis of the dopant gas PH/sub 3/ does not occur. Multiple pulses of 2.2--2.7 J/cm/sup 2/ were used to make Si solar cells with total area efficiencies up to 8.6% without benefit of antireflection coatings.

  10. Specific features of current flow mechanisms in the semiconductor structure of a photoelectric converter with an n +- p-junction and an antireflective porous silicon film

    NASA Astrophysics Data System (ADS)

    Tregulov, V. V.; Stepanov, V. A.; Litvinov, V. G.; Ermachikhin, A. V.

    2016-11-01

    The temperature dependence of forward and reverse branches of the current-voltage characteristic of the semiconductor structure of a photoelectric converter with an n +- p-junction based on single-crystal silicon and an antireflective porous silicon film on the front surface has been studied. The presence of several current flow mechanisms has been revealed. It has been demonstrated that traps that emerge in the process of the formation of the porous silicon film have a considerable effect on the current flow processes in the semiconductor structure under consideration.

  11. Modeling study of peak-dip-hump structure in tunneling spectra of high-temperature superconducting cuprates

    NASA Astrophysics Data System (ADS)

    Ganiev, Orifjon K.

    2016-12-01

    We propose new specific model for quasiparticle (QP) tunneling across the superconductor-insulator-normal metal (SIN) junction based on two mechanisms. Origin of the many features of the tunneling spectra, such as peak-dip-hump (PDH) structure, U- and V-shapes, temperature dependence of differential tunneling conductance, asymmetric conductance peaks, zero-bias conductance, subgap feature and gap inhomogeneity have been explained by the proposed model. We show that the energy scales of the binding energies of large polarons and polaronic Cooper pairs are identified by pseudogap (PG) crossover temperature on the cuprate phase diagram.

  12. Stacking fault induced tunnel barrier in platelet graphite nanofiber

    SciTech Connect

    Lan, Yann-Wen E-mail: ywlan@phys.sinica.edu.tw; Chang, Yuan-Chih; Chang, Chia-Seng; Chen, Chii-Dong E-mail: ywlan@phys.sinica.edu.tw; Chang, Wen-Hao; Li, Yuan-Yao

    2014-09-08

    A correlation study using image inspection and electrical characterization of platelet graphite nanofiber devices is conducted. Close transmission electron microscopy and diffraction pattern inspection reveal layers with inflection angles appearing in otherwise perfectly stacked graphene platelets, separating nanofibers into two domains. Electrical measurement gives a stability diagram consisting of alternating small-large Coulomb blockade diamonds, suggesting that there are two charging islands coupled together through a tunnel junction. Based on these two findings, we propose that a stacking fault can behave as a tunnel barrier for conducting electrons and is responsible for the observed double-island single electron transistor characteristics.

  13. Nonintrusive Measurement Of Temperature Of LED Junction

    NASA Technical Reports Server (NTRS)

    Leidecker, Henning; Powers, Charles

    1991-01-01

    Temperature inferred from spectrum of emitted light. Method of determining temperature of junction based on two relevant characteristics of LED. Gap between valence and conduction electron-energy bands in LED material decreases with increasing temperature, causing wavelength of emitted photon to increase with temperature. Other, as temperature increases, non-radiative processes dissipate more of input electrical energy as heat and less as photons in band-gap wavelenth region; optical and quantum efficiencies decrease with increasing temperature. In principal, either characteristic alone used to determine temperature. However, desirable to use both to obtain indication of uncertainty.

  14. Photodetectors based on junctions of two-dimensional transition metal dichalcogenides

    NASA Astrophysics Data System (ADS)

    Wei, Xia; Yan, Fa-Guang; Shen, Chao; Lv, Quan-Shan; Wang, Kai-You

    2017-03-01

    Transition metal dichalcogenides (TMDCs) have gained considerable attention because of their novel properties and great potential applications. The flakes of TMDCs not only have great light absorptions from visible to near infrared, but also can be stacked together regardless of lattice mismatch like other two-dimensional (2D) materials. Along with the studies on intrinsic properties of TMDCs, the junctions based on TMDCs become more and more important in applications of photodetection. The junctions have shown many exciting possibilities to fully combine the advantages of TMDCs, other 2D materials, conventional and organic semiconductors together. Early studies have greatly enriched the application of TMDCs in photodetection. In this review, we investigate the efforts in photodetectors based on the junctions of TMDCs and analyze the properties of those photodetectors. Homojunctions based on TMDCs can be made by surface chemical doping, elemental doping and electrostatic gating. Heterojunction formed between TMDCs/2D materials, TMDCs/conventional semiconductors and TMDCs/organic semiconductor also deserve more attentions. We also compare the advantages and disadvantages of different junctions, and then give the prospects for the development of junctions based on TMDCs.

  15. Energetic initiators with narrow firing thresholds using Al/CuO Schottky junctions

    NASA Astrophysics Data System (ADS)

    Wang, Feng; Zhu, Peng; Li, Jie; Hu, Bo; Shen, Ruiqi; Ye, Yinghua

    2016-07-01

    We designed and prepared Schottky-junction-based Al/CuO energetic initiators with narrow firing thresholds according to Schottky barrier theory. Using various characterization methods, we preliminarily investigated the electrical breakdown property, withstand strike current ability, and multiple-firing performance of the energetic initiators. The breakdown voltage of the Al/CuO Schottky junction was ~8 V; and electrical breakdown in the initiators occurred one by one rather than simultaneously. The withstand strike current ability of the initiator mainly depended on the heat capacity of its ceramic plug when the electrical stimulus is more than ~8 V, its breakdown voltage. The ceramic plug can absorb heat from the initiator chip, letting the initiator withstand a constant current of 0.5 A for 20 s. More importantly, the initiators might be able to withstand hard electromagnetic interference by coupling the multiple-firing performance with an out-of-line slider in the explosive train. This knowledge of the characteristics of Schottky-junction-based Al/CuO energetic initiators will help in preparing highly insensitive, efficient initiating explosive devices for weapon systems.

  16. Enhanced Magnetoresistance in Molecular Junctions by Geometrical Optimization of Spin-Selective Orbital Hybridization.

    PubMed

    Rakhmilevitch, David; Sarkar, Soumyajit; Bitton, Ora; Kronik, Leeor; Tal, Oren

    2016-03-09

    Molecular junctions based on ferromagnetic electrodes allow the study of electronic spin transport near the limit of spintronics miniaturization. However, these junctions reveal moderate magnetoresistance that is sensitive to the orbital structure at their ferromagnet-molecule interfaces. The key structural parameters that should be controlled in order to gain high magnetoresistance have not been established, despite their importance for efficient manipulation of spin transport at the nanoscale. Here, we show that single-molecule junctions based on nickel electrodes and benzene molecules can yield a significant anisotropic magnetoresistance of up to ∼200% near the conductance quantum G0. The measured magnetoresistance is mechanically tuned by changing the distance between the electrodes, revealing a nonmonotonic response to junction elongation. These findings are ascribed with the aid of first-principles calculations to variations in the metal-molecule orientation that can be adjusted to obtain highly spin-selective orbital hybridization. Our results demonstrate the important role of geometrical considerations in determining the spin transport properties of metal-molecule interfaces.

  17. Materials studies related to the Cu/sub 2/S/ZnCdS heterojunction. First quarter report, March 15, 1980-June 15, 1980

    SciTech Connect

    Burton, L. C.

    1980-07-01

    Work over the first quarter was directed toward compositional measurements of Cu/sub 2/S/ZnCdS junctions by AAS and AES, and modelling of the junction based on these measurements. AAS and AES measurements both indicate an accumulation of Zn under the interface. AES profiles indicate Zn and Cd in the Cu/sub 2/S, although AAS indicates concentrations below 5 x 10/sup 19/ cm/sup -3/. A model based on lateral composition variation at the interface is presented. This model can account for some of the trends seen in Cu/sub 2/S/ZnCdS cells, especially the decrease in short circuit current at higher Zn compositions.

  18. Modulation-mediated unlocking of a parametrically phase-locked spin torque oscillator

    SciTech Connect

    Dürrenfeld, P.; Iacocca, E.; Åkerman, J.; Muduli, P. K.

    2014-12-22

    Modulation of an oscillator is crucial for its application in communication devices. While the output power and linewidth of single magnetic tunnel junction-based spin-torque oscillators (MTJ-STO) are not yet adequate for practical uses, the synchronization of such devices can overcome these limitations. Here, we investigate the modulation behavior of a parametrically synchronized MTJ-STO and show experimentally that modulation of the synchronized state preserves synchronization as long as the modulation frequency, f{sub mod}, is above a characteristic frequency, f{sub unlock}. The unlocking frequency increases with the modulation amplitude in agreement with analytical estimates and numerical simulations. These phenomena are described as a non-resonant unlocking mechanism, whose characteristics are directly related to inherent parameters of the oscillator.

  19. Enhancement of Spin-transfer torque switching via resonant tunneling

    SciTech Connect

    Chatterji, Niladri; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

    2014-12-08

    We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torque thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.

  20. Frequency control of a spin-torque oscillator using magnetostrictive anisotropy

    SciTech Connect

    Park, Min Gyu Albert; Lee, Seok-Hee E-mail: shlee@kaist.edu; Baek, Seung-heon Chris; Park, Byong-Guk E-mail: shlee@kaist.edu

    2016-01-11

    We report the working principle of a spin-torque oscillator, of which the frequency is efficiently controlled by manipulating the magnetostrictive anisotropy. To justify the scheme, we simulate a conventional magnetic-tunnel junction-based oscillator which is fabricated on a piezoelectric material. By applying mechanical stress to a free layer using a piezoelectric material, the oscillation frequency can be controlled to ensure a broad tuning range without a significant reduction of the dynamic resistance variation. Such controllability, which appears in the absence of an external magnetic field, will not only enable the integration of spin-torque oscillators and conventional complimentary metal-oxide semiconductor technology but will also broaden the applicability of spin-torque oscillators.

  1. Vibrational properties of fractionally charged molecules and their relevance for molecular electronics and electrochemistry

    NASA Astrophysics Data System (ADS)

    Bâldea, Ioan

    2017-01-01

    Important insight into the charge transfer across interfaces can be gained in situations wherein, for given adsorbate and substrate species, the (fractional) charge state of the adsorbed molecules can be varied in a controlled way. Applied biases can continuously tune the charge of molecules embedded in nanojunctions and/or in electrochemical setups but information on the fractional charges of the corresponding partial oxidized/reduced states cannot be directly accessed in experiments. Here, we present theoretical results revealing that information on the fractional molecular charge can be obtained by monitoring molecular vibrational properties, which can be measured by means of surface enhanced Raman spectroscopy (SERS). To this aim, we performed DFT calculations for the benchmark 1,4-benzenedithiol molecule. The changes in the vibrational frequencies are considerably larger than those recently measured in combined transport-SERS studies on molecular junctions based on fullerene. We believe that this theoretical result is an encouraging message to experimentalists.

  2. Dual Control of Giant Field-like Spin Torque in Spin Filter Tunnel Junctions

    PubMed Central

    Tang, Y. -H.; Chu, F. -C.; Kioussis, Nicholas

    2015-01-01

    We predict a giant field-like spin torque, , in spin-filter (SF) barrier tunnel junctions in sharp contrast to existing junctions based on nonmagnetic passive barriers. We demonstrate that has linear bias behavior, is independent of the SF thickness, and has odd parity with respect to the SF’s exchange splitting. Thus, it can be selectively controlled via external bias or external magnetic field which gives rise to sign reversal of via magnetic field switching. The underlying mechanism is the interlayer exchange coupling between the noncollinear magnetizations of the SF and free ferromagnetic electrode via the nonmagnetic insulating (I) spacer giving rise to giant spin-dependent reflection at the SF/I interface. These findings suggest that the proposed field-like-spin-torque MRAM may provide promising dual functionalities for both ‘reading’ and ‘writing’ processes which require lower critical current densities and faster writing and reading speeds. PMID:26095146

  3. Skyrmion based microwave detectors and harvesting

    SciTech Connect

    Finocchio, G.; Giordano, A.; Ricci, M.; Burrascano, P.; Tomasello, R.; Lanuzza, M.; Puliafito, V.; Azzerboni, B.; Carpentieri, M.

    2015-12-28

    Magnetic skyrmions are topologically protected states that are very promising for the design of the next generation of ultra-low-power electronic devices. In this letter, we propose a magnetic tunnel junction based spin-transfer torque diode with a magnetic skyrmion as ground state and a perpendicular polarizer patterned as nano-contact for a local injection of the current. The key result is the possibility to achieve sensitivities (i.e., detection voltage over input microwave power) larger than 2000 V/W for optimized contact diameters. We also pointed out that large enough voltage controlled magnetocrystalline anisotropy could significantly improve the sensitivity. Our results can be very useful for the identification of a class of spin-torque diodes with a non-uniform ground state and to understand the fundamental physics of the skyrmion dynamical properties.

  4. Optimization on photoelectric detection based on stacked La0.9Sr0.1MnO3-δ/LaAlO3-δ multijunctions

    NASA Astrophysics Data System (ADS)

    Xing, Jie; Ying Hao, Hui; Jia Guo, Er; Yang, Fang

    2011-08-01

    Three multijunctions consisting of La0.9Sr0.1MnO3-δ and LaAlO3-δ on Si substrate have been fabricated under different oxygen pressures by laser molecular beam epitaxy. They exhibit nonlinear and rectifying current-voltage characteristics and evident photocurrent response to He-Ne laser illumination. Experimental results indicate that the periodically stacked multijunction grown under lower oxygen pressure shows a better rectification behavior and a higher photocurrent. The photovoltaic responsivities of the multijunctions are enhanced greatly at reverse bias and are much higher than that of a similarly grown single p-n junction. Based on the band structure of the multilayers, a possible mechanism of the photovoltaic process was proposed. A high photovoltage responsivity of 168.6 mV/mW has been achieved at - 6 V bias; this demonstrates the potential of the present multijunction configuration for photodetectors operating at room temperature.

  5. Dual Control of Giant Field-like Spin Torque in Spin Filter Tunnel Junctions.

    PubMed

    Tang, Y-H; Chu, F-C; Kioussis, Nicholas

    2015-06-22

    We predict a giant field-like spin torque, T[symbol in text], in spin-filter (SF) barrier tunnel junctions in sharp contrast to existing junctions based on nonmagnetic passive barriers. We demonstrate that has linear bias behavior, is independent of the SF thickness, and has odd parity with respect to the SF's exchange splitting. Thus, it can be selectively controlled via external bias or external magnetic field which gives rise to sign reversal of T[symbol in text] via magnetic field switching. The underlying mechanism is the interlayer exchange coupling between the noncollinear magnetizations of the SF and free ferromagnetic electrode via the nonmagnetic insulating (I) spacer giving rise to giant spin-dependent reflection at the SF/I interface. These findings suggest that the proposed field-like-spin-torque MRAM may provide promising dual functionalities for both 'reading' and 'writing' processes which require lower critical current densities and faster writing and reading speeds.

  6. Accurate determination of plasmonic fields in molecular junctions by current rectification at optical frequencies.

    PubMed

    Arielly, Rani; Ofarim, Ayelet; Noy, Gilad; Selzer, Yoram

    2011-07-13

    Current rectification, i.e., induction of dc current by oscillating electromagnetic fields, is demonstrated in molecular junctions at an optical frequency. The magnitude of rectification is used to accurately determine the effective oscillating potentials in the junctions induced by the irradiating laser. Since the gap size of the junctions used in this study is precisely determined by the length of the embedded molecules, the oscillating potential can be used to calculate the plasmonic enhancement of the electromagnetic field in the junctions. With a set of junctions based on alkyl thiolated molecules with identical HOMO-LUMO gap and different lengths, an exponential dependence of the plasmonic field enhancement on gap size is observed.

  7. Cumulants of heat transfer across nonlinear quantum systems

    NASA Astrophysics Data System (ADS)

    Li, Huanan; Agarwalla, Bijay Kumar; Li, Baowen; Wang, Jian-Sheng

    2013-12-01

    We consider thermal conduction across a general nonlinear phononic junction. Based on two-time observation protocol and the nonequilibrium Green's function method, heat transfer in steady-state regimes is studied, and practical formulas for the calculation of the cumulant generating function are obtained. As an application, the general formalism is used to study anharmonic effects on fluctuation of steady-state heat transfer across a single-site junction with a quartic nonlinear on-site pinning potential. An explicit nonlinear modification to the cumulant generating function exact up to the first order is given, in which the Gallavotti-Cohen fluctuation symmetry is found still valid. Numerically a self-consistent procedure is introduced, which works well for strong nonlinearity.

  8. Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure

    NASA Astrophysics Data System (ADS)

    Lu, Xing; Liu, Chao; Jiang, Huaxing; Zou, Xinbo; Zhang, Anping; Lau, Kei May

    2016-08-01

    In this letter, monolithic integration of InGaN/GaN light emitting diodes (LEDs) with vertical metal-oxide-semiconductor field effect transistor (VMOSFET) drivers have been proposed and demonstrated. The VMOSFET was achieved by simply regrowing a p- and n-GaN bilayer on top of a standard LED structure. After fabrication, the VMOSFET is connected with the LED through the conductive n-GaN layer, with no need of extra metal interconnections. The junction-based VMOSFET is inherently an enhancement-mode (E-mode) device with a threshold voltage of 1.6 V. By controlling the gate bias of the VMOSFET, the light intensity emitted from the integrated VMOSFET-LED device could be well modulated, which shows great potential for various applications, including solid-state lighting, micro-displays, and visible light communications.

  9. Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation followed by pulsed laser melting

    NASA Astrophysics Data System (ADS)

    Xiyuan, Wang; Yongguang, Huang; Dewei, Liu; Xiaoning, Zhu; Xiao, Cui; Hongliang, Zhu

    2013-06-01

    Pn junctions based on single crystalline tellurium supersaturated silicon were formed by ion implantation followed by pulsed laser melting (PLM). P type silicon wafers were implanted with 245 keV 126Te+ to a dose of 2 × 1015 ions/cm2, after a PLM process (248 nm, laser fluence of 0.30 and 0.35 J/cm2, 1-5 pulses, duration 30 ns), an n+ type single crystalline tellurium supersaturated silicon layer with high carrier density (highest concentration 4.10 × 1019 cm-3, three orders of magnitude larger than the solid solution limit) was formed, it shows high broadband optical absorption from 400 to 2500 nm. Current—voltage measurements were performed on these diodes under dark and one standard sun (AM 1.5), and good rectification characteristics were observed. For present results, the samples with 4-5 pulses PLM are best.

  10. Dual Control of Giant Field-like Spin Torque in Spin Filter Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Tang, Y.-H.; Chu, F.-C.; Kioussis, Nicholas

    2015-06-01

    We predict a giant field-like spin torque, , in spin-filter (SF) barrier tunnel junctions in sharp contrast to existing junctions based on nonmagnetic passive barriers. We demonstrate that has linear bias behavior, is independent of the SF thickness, and has odd parity with respect to the SF’s exchange splitting. Thus, it can be selectively controlled via external bias or external magnetic field which gives rise to sign reversal of via magnetic field switching. The underlying mechanism is the interlayer exchange coupling between the noncollinear magnetizations of the SF and free ferromagnetic electrode via the nonmagnetic insulating (I) spacer giving rise to giant spin-dependent reflection at the SF/I interface. These findings suggest that the proposed field-like-spin-torque MRAM may provide promising dual functionalities for both ‘reading’ and ‘writing’ processes which require lower critical current densities and faster writing and reading speeds.

  11. SuperTools Test and Evaluation Plan

    SciTech Connect

    Mannos, Tom J.

    2017-01-01

    Superconducting electronics (SCE) represents a potential path to efficient exascale computing for HPC and data center applications, but SCE-based circuit design lags far behind its CMOS equivalent. IARPA’s ongoing C3 program and its developing SuperTools program aim to jumpstart SCE R&D with the near-term goal of producing a high-speed, low-energy, 64-bit RISC processor using Josephson Junction based logic cells. SuperTools performers will develop software tools for efficient SCE design and accurate simulation and characterization of JJ-based circuits, which include the RSFQ, RQL, and AQFP logic families. T&E teams from NIST, MIT Lincoln Lab, Berkeley Lab, and Sandia National Labs will evaluate the tools and fabricate test circuits to compare with simulated results. The five-year, three-phase program includes 48 performer deliverables, three annual technical exchange meetings, and annual site visits.

  12. Characteristics of strong ferromagnetic Josephson junctions with epitaxial barriers

    NASA Astrophysics Data System (ADS)

    Bell, C.; Loloee, R.; Burnell, G.; Blamire, M. G.

    2005-05-01

    We present the measurement of superconductor/ferromagnetic Josephson junctions, based on an epitaxial Nb bottom electrode and epitaxial Fe20Ni80 barrier. Uniform junctions have been fabricated with a barrier thicknesses in the range 2-12nm . The maximum critical current density ˜2.4±0.2×109Am-2 was found for a device with a 3-nm -thick barrier at 4.2K , corresponding to an average characteristic voltage ICRN˜16μV . The ICRN showed a nonmonotonic behavior with Fe20Ni80 thickness. The variation of the resistance of a unit area ARN , of the junctions with barrier thickness gave a Nb/Py specific interface resistance of 6.0±0.5fΩm2 and Fe20Ni80 resistivity of 174±50nΩm , consistent with other studies in polycrystalline samples.

  13. Electrodeposited CuInSe2 Thin Film Junctions

    NASA Technical Reports Server (NTRS)

    Raffaelle, R. P.; Mantovani, J. G.; Bailey, S. G.; Hepp, A. F.; Gordon, E. M.; Haraway, R.

    1997-01-01

    We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

  14. Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

    DOEpatents

    Walukiewicz, Wladyslaw [Kensington, CA; Yu, Kin Man [Lafayette, CA

    2012-07-31

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  15. Dilute group III-V nitride intermediate band solar cells with contact blocking layers

    DOEpatents

    Walukiewicz, Wladyslaw; Yu, Kin Man

    2015-02-24

    An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, the overall power conversion efficiency of a IBSC will be much higher than an conventional single junction solar cell. The p-n junction absorber layers of the IBSC may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.

  16. Structure-dependent magnetoresistance and spin-transfer torque in antiferromagnetic Fe |MgO |FeMn |Cu tunnel junctions

    NASA Astrophysics Data System (ADS)

    Jia, Xingtao; Tang, Huimin; Wang, Shizhuo; Qin, Minghui

    2017-02-01

    We predict large magnetoresistance (MR) and spin transfer torque (STT) in antiferromagnetic Fe |MgO |FeMn |Cu tunnel junctions based on first-principles scattering theory. MR as large as ˜100 % is found in one junction. Magnetic dynamic simulations show that STT acting on the antiferromagnetic order parameter dominates the spin dynamics, and an electronic bias of order 10-1mV and current density of order 105Acm-2 can switches a junction of three-layer MgO, they are about one order smaller than that in Fe |MgO |Fe junction with the same barrier thickness, respectively. The multiple scattering in the antiferromagnetic region is considered to be responsible for the enhanced spin torque and smaller switching current density.

  17. Optical switching of electric charge transfer pathways in porphyrin: a light-controlled nanoscale current router.

    PubMed

    Thanopulos, Ioannis; Paspalakis, Emmanuel; Yannopapas, Vassilios

    2008-11-05

    We introduce a novel molecular junction based on a thiol-functionalized porphyrin derivative with two almost energetically degenerate equilibrium configurations. We show that each equilibrium structure defines a pathway of maximal electric charge transfer through the molecular junction and that these two conduction pathways are spatially orthogonal. We further demonstrate computationally how to switch between the two equilibrium structures of the compound by coherent light. The optical switching mechanism is presented in the relevant configuration subspace of the compound, and the corresponding potential and electric dipole surfaces are obtained by ab initio methods. The laser-induced isomerization takes place in two steps in tandem, while each step is induced by a two-photon process. The effect of metallic electrodes on the electromagnetic irradiation driving the optical switching is also investigated. Our study demonstrates the potential for using thiol-functionalized porphyrin derivatives for the development of a light-controlled nanoscale current router.

  18. Investigation of the regimes of mixing of superconducting tunneling structures

    NASA Astrophysics Data System (ADS)

    Kalashnikov, K. V.; Artanov, A. A.; Filippenko, L. V.; Koshelets, V. P.

    2016-11-01

    The regimes of operation of a superconductor-insulator-superconductor tunnel junction based on three-layer structures Nb/AlOx/Nb and Nb/AlN/NbN as a harmonic mixer (for frequencies of the order of 600 and 20 GHz, respectively) and a frequency up-converter (in the frequency range from 0.1 to 5.0 GHz) have been investigated experimentally. The quasiparticle and Josephson mixing regimes have been compared. It has been shown that, in some practical applications, such as the use of the superconductor-insulator-superconductor junction as a cryogenic harmonic phase detector, the Josephson mixing regime is more preferable, because it can provide a higher signal and a greater signal-to-noise ratio as compared to the quasiparticle mixing regime. It has also been demonstrated that the Josephson mixing regime is promising for the use in signal multiplexing systems for superconducting detectors.

  19. The interplay between the Aharonov-Bohm interference and parity selective tunneling in graphene nanoribbon rings.

    PubMed

    Nguyen, V Hung; Niquet, Y-M; Dollfus, P

    2014-05-21

    We report on a numerical study of the Aharonov-Bohm (AB) effect and parity selective tunneling in pn junctions based on rectangular graphene rings where the contacts and ring arms are all made of zigzag nanoribbons. We find that when applying a magnetic field to the ring, the AB interference can reverse the parity symmetry of incoming waves and hence can strongly modulate the parity selective transmission through the system. Therefore, the transmission between two states of different parity exhibits the AB oscillations with a π-phase shift, compared to the case of states of the same parity. On this basis, it is shown that interesting effects, such as giant (both positive and negative) magnetoresistance and strong negative differential conductance, can be achieved in this structure. Our study thus presents a new property of the AB interference in graphene nanorings, which could be helpful for further understanding the transport properties of graphene mesoscopic systems.

  20. Low-field Switching Four-state Nonvolatile Memory Based on Multiferroic Tunnel Junctions

    NASA Astrophysics Data System (ADS)

    Yau, H. M.; Yan, Z. B.; Chan, N. Y.; Au, K.; Wong, C. M.; Leung, C. W.; Zhang, F. Y.; Gao, X. S.; Dai, J. Y.

    2015-08-01

    Multiferroic tunneling junction based four-state non-volatile memories are very promising for future memory industry since this kind of memories hold the advantages of not only the higher density by scaling down memory cell but also the function of magnetically written and electrically reading. In this work, we demonstrate a success of this four-state memory in a material system of NiFe/BaTiO3/La0.7Sr0.3MnO3 with improved memory characteristics such as lower switching field and larger tunneling magnetoresistance (TMR). Ferroelectric switching induced resistive change memory with OFF/ON ratio of 16 and 0.3% TMR effect have been achieved in this multiferroic tunneling structure.

  1. High-efficiency thermal switch based on topological Josephson junctions

    NASA Astrophysics Data System (ADS)

    Sothmann, Björn; Giazotto, Francesco; Hankiewicz, Ewelina M.

    2017-02-01

    We propose theoretically a thermal switch operating by the magnetic-flux controlled diffraction of phase-coherent heat currents in a thermally biased Josephson junction based on a two-dimensional topological insulator. For short junctions, the system shows a sharp switching behavior while for long junctions the switching is smooth. Physically, the switching arises from the Doppler shift of the superconducting condensate due to screening currents induced by a magnetic flux. We suggest a possible experimental realization that exhibits a relative temperature change of 40% between the on and off state for realistic parameters. This is a factor of two larger than in recently realized thermal modulators based on conventional superconducting tunnel junctions.

  2. Hybrid-free Josephson Parametric Converter

    NASA Astrophysics Data System (ADS)

    Frattini, N. E.; Narla, A.; Sliwa, K. M.; Shankar, S.; Hatridge, M.; Devoret, M. H.

    A necessary component for any quantum computation architecture is the ability to perform efficient quantum operations. In the microwave regime of superconducting qubits, these quantum-limited operations can be realized with a non-degenerate Josephson junction based three-wave mixer, the Josephson Parametric Converter (JPC). Currently, the quantum signal of interest must pass through a lossy 180 degree hybrid to be presented as a differential drive to the JPC. This hybrid therefore places a limit on the quantum efficiency of the system and also increases the device footprint. We present a new design for the JPC eliminating the need for any external hybrid. We also show that this design has nominally identical performance to the conventional JPC. Work supported by ARO, AFOSR and YINQE.

  3. Cavity QED based on collective magnetic dipole coupling: spin ensembles as hybrid two-level systems.

    PubMed

    Imamoğlu, Atac

    2009-02-27

    We analyze the magnetic dipole coupling of an ensemble of spins to a superconducting microwave stripline structure, incorporating a Josephson junction based transmon qubit. We show that this system is described by an embedded Jaynes-Cummings model: in the strong coupling regime, collective spin-wave excitations of the ensemble of spins pick up the nonlinearity of the cavity mode, such that the two lowest eigenstates of the coupled spin wave-microwave cavity-Josephson junction system define a hybrid two-level system. The proposal described here enables new avenues for nonlinear optics using optical photons coupled to spin ensembles via Raman transitions. The possibility of strong coupling cavity QED with magnetic dipole transitions also opens up the possibility of extending quantum information processing protocols to spins in silicon or graphene, without the need for single-spin confinement.

  4. Effect of Heteroatom Substitution on Transport in Alkanedithiol-Based Molecular Tunnel Junctions: Evidence for Universal Behavior.

    PubMed

    Xie, Zuoti; Bâldea, Ioan; Oram, Stuart; Smith, Christopher E; Frisbie, C Daniel

    2017-01-24

    The transport properties of molecular junctions based on alkanedithiols with three different methylene chain lengths were compared with junctions based on similar chains wherein every third -CH2- was replaced with O or S, that is, following the general formula HS(CH2CH2X)nCH2CH2SH, where X = CH2, O, or S and n = 1, 2, or 3. Conducting probe atomic force microscopy revealed that the low bias resistance of the chains increased upon substitution in the order CH2 < O < S. This change in resistance is ascribed to the observed identical trend in contact resistance, Rc, whereas the exponential prefactor β (length sensitivity) was essentially the same for all chains. Using an established, analytical single-level model, we computed the effective energy offset εh (i.e., Fermi level relative to the effective HOMO level) and the electronic coupling strength Γ from the current-voltage (I-V) data. The εh values were only weakly affected by heteroatom substitution, whereas the interface coupling strength Γ varied by over an order of magnitude. Consequently, we ascribe the strong variation in Rc to the systematic change in Γ. Quantum chemical calculations reveal that the HOMO density shifts from the terminal SH groups for the alkanedithiols to the heteroatoms in the substituted chains, which provides a plausible explanation for the marked decrease in Γ for the dithiols with electron-rich heteroatoms. The results indicate that the electronic coupling and thus the resistance of alkanedithiols can be tuned by substitution of even a single atom in the middle of the molecule. Importantly, when appropriately normalized, the experimental I-V curves were accurately simulated over the full bias range (±1.5 V) using the single-level model with no adjustable parameters. The data could be collapsed to a single universal curve predicted by the model, providing clear evidence that the essential physics is captured by this analytical approach and supporting its utility for molecular

  5. Electrochemical metallization switching with a platinum group metal in different oxides

    NASA Astrophysics Data System (ADS)

    Wang, Zhongrui; Jiang, Hao; Hyung Jang, Moon; Lin, Peng; Ribbe, Alexander; Xia, Qiangfei; Yang, J. Joshua

    2016-07-01

    In a normal electrochemical metallization (ECM) switch, electrochemically active metals, such as Ag and Cu are used to provide mobile ions for the conducting filament. In both ECM and valence change memory (VCM) devices, platinum group metals, such as Pt and Pd, are typically used as the counter electrode and assumed to be chemically and physically inert. In this study, we explore whether the so-called inert metal itself can form a conducting filament and result in repeatable resistance switching. Pd and different oxide host matrices are used for this purpose. We have observed that the transport of oxygen anions dominates over Pd metal cations in ALD deposited AlOx and HfOx. However, in sputtered SiOx, Pd cation transport was revealed, accompanied by the formation of nano-crystalline Pd filament(s) in the junctions. Based on these observations, memristors with reversible and repeatable switching were obtained by using Pd doped SiOx as the switching material.In a normal electrochemical metallization (ECM) switch, electrochemically active metals, such as Ag and Cu are used to provide mobile ions for the conducting filament. In both ECM and valence change memory (VCM) devices, platinum group metals, such as Pt and Pd, are typically used as the counter electrode and assumed to be chemically and physically inert. In this study, we explore whether the so-called inert metal itself can form a conducting filament and result in repeatable resistance switching. Pd and different oxide host matrices are used for this purpose. We have observed that the transport of oxygen anions dominates over Pd metal cations in ALD deposited AlOx and HfOx. However, in sputtered SiOx, Pd cation transport was revealed, accompanied by the formation of nano-crystalline Pd filament(s) in the junctions. Based on these observations, memristors with reversible and repeatable switching were obtained by using Pd doped SiOx as the switching material. Electronic supplementary information (ESI) available

  6. Uncovering a law of corresponding states for electron tunneling in molecular junctions

    NASA Astrophysics Data System (ADS)

    Bâldea, Ioan; Xie, Zuoti; Frisbie, C. Daniel

    2015-06-01

    Laws of corresponding states known so far demonstrate that certain macroscopic systems can be described in a universal manner in terms of reduced quantities, which eliminate specific substance properties. To quantitatively describe real systems, all these laws of corresponding states contain numerical factors adjusted empirically. Here, we report a law of corresponding states deduced analytically for charge transport via tunneling in molecular junctions, which we validate against current-voltage measurements for conducting probe atomic force microscope junctions based on benchmark molecular series (oligophenylenedithiols and alkanedithiols) and electrodes (silver, gold, and platinum), as well as against transport data for scanning tunneling microscope junctions. Two salient features distinguish the present law of corresponding states from all those known previously. First, it is expressed by a universal curve free of empirical parameters. Second, it demonstrates that a universal behavior is not necessarily affected by strong stochastic fluctuations often observed in molecular electronics. An important and encouraging message of this finding is that transport behavior across different molecular platforms can be similar and extraordinarily reproducible.Laws of corresponding states known so far demonstrate that certain macroscopic systems can be described in a universal manner in terms of reduced quantities, which eliminate specific substance properties. To quantitatively describe real systems, all these laws of corresponding states contain numerical factors adjusted empirically. Here, we report a law of corresponding states deduced analytically for charge transport via tunneling in molecular junctions, which we validate against current-voltage measurements for conducting probe atomic force microscope junctions based on benchmark molecular series (oligophenylenedithiols and alkanedithiols) and electrodes (silver, gold, and platinum), as well as against transport data

  7. Thermoelectricity at the molecular scale: a large Seebeck effect in endohedral metallofullerenes

    NASA Astrophysics Data System (ADS)

    Lee, See Kei; Buerkle, Marius; Yamada, Ryo; Asai, Yoshihiro; Tada, Hirokazu

    2015-12-01

    Single molecule devices provide a unique system to study the thermoelectric energy conversion at an atomistic level and can provide valuable information for the design of organic thermoelectric materials. Here we present a comprehensive study of the thermoelectric transport properties of molecular junctions based on C82, Gd@C82, and Ce@C82. We combine precise scanning tunneling microscope break-junction measurements of the thermopower and conductance with quantitatively accurate self-energy-corrected first-principles transport calculations. We find that all three fullerene derivatives give rise to a negative thermopower (n-conducting). The absolute value, however, is much larger for the Gd@C82 and Ce@C82 junctions. The conductance, on the other hand, remains comparable for all three systems. The power factor determined for the Gd@C82 based junction is so far the highest obtained for a single-molecule device. Although the encapsulated metal atom does not directly contribute to the transport, we show that the observed enhancement of the thermopower for Gd@C82 and Ce@C82 is elucidated by the substantial changes in the electronic- and geometrical structure of the fullerene molecule induced by the encapsulated metal atom.Single molecule devices provide a unique system to study the thermoelectric energy conversion at an atomistic level and can provide valuable information for the design of organic thermoelectric materials. Here we present a comprehensive study of the thermoelectric transport properties of molecular junctions based on C82, Gd@C82, and Ce@C82. We combine precise scanning tunneling microscope break-junction measurements of the thermopower and conductance with quantitatively accurate self-energy-corrected first-principles transport calculations. We find that all three fullerene derivatives give rise to a negative thermopower (n-conducting). The absolute value, however, is much larger for the Gd@C82 and Ce@C82 junctions. The conductance, on the other hand

  8. Concurrent and Accurate Short Read Mapping on Multicore Processors.

    PubMed

    Martínez, Héctor; Tárraga, Joaquín; Medina, Ignacio; Barrachina, Sergio; Castillo, Maribel; Dopazo, Joaquín; Quintana-Ortí, Enrique S

    2015-01-01

    We introduce a parallel aligner with a work-flow organization for fast and accurate mapping of RNA sequences on servers equipped with multicore processors. Our software, HPG Aligner SA (HPG Aligner SA is an open-source application. The software is available at http://www.opencb.org, exploits a suffix array to rapidly map a large fraction of the RNA fragments (reads), as well as leverages the accuracy of the Smith-Waterman algorithm to deal with conflictive reads. The aligner is enhanced with a careful strategy to detect splice junctions based on an adaptive division of RNA reads into small segments (or seeds), which are then mapped onto a number of candidate alignment locations, providing crucial information for the successful alignment of the complete reads. The experimental results on a platform with Intel multicore technology report the parallel performance of HPG Aligner SA, on RNA reads of 100-400 nucleotides, which excels in execution time/sensitivity to state-of-the-art aligners such as TopHat 2+Bowtie 2, MapSplice, and STAR.

  9. The ω-SQUIPT as a tool to phase-engineer Josephson topological materials

    NASA Astrophysics Data System (ADS)

    Strambini, E.; D'Ambrosio, S.; Vischi, F.; Bergeret, F. S.; Nazarov, Yu. V.; Giazotto, F.

    2016-12-01

    Multi-terminal superconducting Josephson junctions based on the proximity effect offer the opportunity to tailor non-trivial quantum states in nanoscale weak links. These structures can realize exotic topologies in several dimensions, for example, artificial topological superconductors that are able to support Majorana bound states, and pave the way to emerging quantum technologies and future quantum information schemes. Here we report the realization of a three-terminal Josephson interferometer based on a proximized nanosized weak link. Our tunnelling spectroscopy measurements reveal transitions between gapped (that is, insulating) and gapless (conducting) states that are controlled by the phase configuration of the three superconducting leads connected to the junction. We demonstrate the topological nature of these transitions: a gapless state necessarily occurs between two gapped states of different topological indices, in much the same way that the interface between two insulators of different topologies is necessarily conducting. The topological numbers that characterize such gapped states are given by superconducting phase windings over the two loops that form the Josephson interferometer. As these gapped states cannot be transformed to one another continuously without passing through a gapless condition, they are topologically protected. The same behaviour is found for all of the points of the weak link, confirming that this topology is a non-local property. Our observation of the gapless state is pivotal for enabling phase engineering of different and more sophisticated artificial topological materials.

  10. Giant interfacial perpendicular magnetic anisotropy in MgO/CoFe/capping layer structures

    NASA Astrophysics Data System (ADS)

    Peng, Shouzhong; Zhao, Weisheng; Qiao, Junfeng; Su, Li; Zhou, Jiaqi; Yang, Hongxin; Zhang, Qianfan; Zhang, Youguang; Grezes, Cecile; Amiri, Pedram Khalili; Wang, Kang L.

    2017-02-01

    Magnetic tunnel junction based on the CoFeB/MgO/CoFeB structures is of great interest due to its application in the spin-transfer-torque magnetic random access memory (STT-MRAM). Large interfacial perpendicular magnetic anisotropy (PMA) is required to achieve high thermal stability. Here, we use the first-principles calculations to investigate the magnetic anisotropy energy (MAE) of the MgO/CoFe/capping layer structures, where the capping materials include 5d metals Hf, Ta, Re, Os, Ir, Pt, and Au and 6p metals Tl, Pb, and Bi. We demonstrate that it is feasible to enhance PMA by using proper capping materials. Relatively large PMA is found in the structures with the capping materials of Hf, Ta, Os, Ir, and Pb. More importantly, the MgO/CoFe/Bi structure gives rise to giant PMA (6.09 mJ/m2), which is about three times larger than that of the MgO/CoFe/Ta structure. The origin of the MAE is elucidated by examining the contributions to MAE from each atomic layer and orbital. These findings provide a comprehensive understanding of the PMA and point towards the possibility to achieve the advanced-node STT-MRAM with high thermal stability.

  11. Hybrid pn-junction solar cells based on layers of inorganic nanocrystals and organic semiconductors: optimization of layer thickness by considering the width of the depletion region.

    PubMed

    Saha, Sudip K; Guchhait, Asim; Pal, Amlan J

    2014-03-07

    We report the formation and characterization of hybrid pn-junction solar cells based on a layer of copper diffused silver indium disulfide (AgInS2@Cu) nanoparticles and another layer of copper phthalocyanine (CuPc) molecules. With copper diffusion in the nanocrystals, their optical absorption and hence the activity of the hybrid pn-junction solar cells was extended towards the near-IR region. To decrease the particle-to-particle separation for improved carrier transport through the inorganic layer, we replaced the long-chain ligands of copper-diffused nanocrystals in each monolayer with short-ones. Under illumination, the hybrid pn-junctions yielded a higher short-circuit current as compared to the combined contribution of the Schottky junctions based on the components. A wider depletion region at the interface between the two active layers in the pn-junction device as compared to that of the Schottky junctions has been considered to analyze the results. Capacitance-voltage characteristics under a dark condition supported such a hypothesis. We also determined the width of the depletion region in the two layers separately so that a pn-junction could be formed with a tailored thickness of the two materials. Such a "fully-depleted" device resulted in an improved photovoltaic performance, primarily due to lessening of the internal resistance of the hybrid pn-junction solar cells.

  12. Superfluid qubit systems with ring shaped optical lattices.

    PubMed

    Amico, Luigi; Aghamalyan, Davit; Auksztol, Filip; Crepaz, Herbert; Dumke, Rainer; Kwek, Leong Chuan

    2014-03-06

    We study an experimentally feasible qubit system employing neutral atomic currents. Our system is based on bosonic cold atoms trapped in ring-shaped optical lattice potentials. The lattice makes the system strictly one dimensional and it provides the infrastructure to realize a tunable ring-ring interaction. Our implementation combines the low decoherence rates of neutral cold atoms systems, overcoming single site addressing, with the robustness of topologically protected solid state Josephson flux qubits. Characteristic fluctuations in the magnetic fields affecting Josephson junction based flux qubits are expected to be minimized employing neutral atoms as flux carriers. By breaking the Galilean invariance we demonstrate how atomic currents through the lattice provide an implementation of a qubit. This is realized either by artificially creating a phase slip in a single ring, or by tunnel coupling of two homogeneous ring lattices. The single qubit infrastructure is experimentally investigated with tailored optical potentials. Indeed, we have experimentally realized scaled ring-lattice potentials that could host, in principle, n ~ 10 of such ring-qubits, arranged in a stack configuration, along the laser beam propagation axis. An experimentally viable scheme of the two-ring-qubit is discussed, as well. Based on our analysis, we provide protocols to initialize, address, and read-out the qubit.

  13. Tunable GaTe-MoS2 van der Waals p-n Junctions with Novel Optoelectronic Performance.

    PubMed

    Wang, Feng; Wang, Zhenxing; Xu, Kai; Wang, Fengmei; Wang, Qisheng; Huang, Yun; Yin, Lei; He, Jun

    2015-11-11

    P-n junctions based on vertically stacked van der Waals (vdW) materials have attracted a great deal of attention and may open up unforeseen opportunities in electronics and optoelectronics. However, due to the lack of intrinsic p-type vdW materials, most previous studies generally adopted electrical gating, special electrode contacts, or chemical doping methods to realize p-n vdW junctions. GaTe is an intrinsic p-type vdW material with a relatively high charge density, and it has a direct band gap that is independent of thickness. Here, we report the construction of ultrathin and tunable p-GaTe/n-MoS2 vdW heterostructure with high photovoltaic and photodetecting performance. The rectification ratio, external quantum efficiency, and photoresponsivity are as high as 4 × 10(5), 61.68%, and 21.83 AW(-1), respectively. In particular, the detectivity is up to 8.4 × 10(13) Jones, which is even higher than commercial Si, InGaAs photodetectors. This study demonstrates the promising potential of p-GaTe/n-MoS2 heterostructures for next-generation electronic and optoelectronic devices.

  14. Resolving metal-molecule interfaces at single-molecule junctions

    PubMed Central

    Komoto, Yuki; Fujii, Shintaro; Nakamura, Hisao; Tada, Tomofumi; Nishino, Tomoaki; Kiguchi, Manabu

    2016-01-01

    Electronic and structural detail at the electrode-molecule interface have a significant influence on charge transport across molecular junctions. Despite the decisive role of the metal-molecule interface, a complete electronic and structural characterization of the interface remains a challenge. This is in no small part due to current experimental limitations. Here, we present a comprehensive approach to obtain a detailed description of the metal-molecule interface in single-molecule junctions, based on current-voltage (I-V) measurements. Contrary to conventional conductance studies, this I-V approach provides a correlated statistical description of both, the degree of electronic coupling across the metal-molecule interface, and the energy alignment between the conduction orbital and the Fermi level of the electrode. This exhaustive statistical approach was employed to study single-molecule junctions of 1,4-benzenediamine (BDA), 1,4-butanediamine (C4DA), and 1,4-benzenedithiol (BDT). A single interfacial configuration was observed for both BDA and C4DA junctions, while three different interfacial arrangements were resolved for BDT. This multiplicity is due to different molecular adsorption sites on the Au surface namely on-top, hollow, and bridge. Furthermore, C4DA junctions present a fluctuating I-V curve arising from the greater conformational freedom of the saturated alkyl chain, in sharp contrast with the rigid aromatic backbone of both BDA and BDT. PMID:27221947

  15. Physical model of the contact resistivity of metal-graphene junctions

    SciTech Connect

    Chaves, Ferney A. Jiménez, David; Cummings, Aron W.; Roche, Stephan

    2014-04-28

    While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. One of the most important factors in determining the resistance of a metal-graphene junction is the contact resistivity. Despite the large number of experimental works that exist in the literature measuring the contact resistivity, a simple model of it is still lacking. In this paper, we present a comprehensive physical model for the contact resistivity of these junctions, based on the Bardeen Transfer Hamiltonian method. This model unveils the role played by different electrical and physical parameters in determining the specific contact resistivity, such as the chemical potential of interaction, the work metal-graphene function difference, and the insulator thickness between the metal and graphene. In addition, our model reveals that the contact resistivity is strongly dependent on the bias voltage across the metal-graphene junction. This model is applicable to a wide variety of graphene-based electronic devices and thus is useful for understanding how to optimize the contact resistance in these systems.

  16. Shift current bulk photovoltaic effect in polar materials—hybrid and oxide perovskites and beyond

    NASA Astrophysics Data System (ADS)

    Tan, Liang Z.; Zheng, Fan; Young, Steve M.; Wang, Fenggong; Liu, Shi; Rappe, Andrew M.

    2016-08-01

    The bulk photovoltaic effect (BPVE) refers to the generation of a steady photocurrent and above-bandgap photovoltage in a single-phase homogeneous material lacking inversion symmetry. The mechanism of BPVE is decidedly different from the typical p-n junction-based photovoltaic mechanism in heterogeneous materials. Recently, there has been renewed interest in ferroelectric materials for solar energy conversion, inspired by the discovery of above-bandgap photovoltages in ferroelectrics, the invention of low bandgap ferroelectric materials and the rapidly improving power conversion efficiency of metal halide perovskites. However, as long as the nature of the BPVE and its dependence on composition and structure remain poorly understood, materials engineering and the realisation of its true potential will be hampered. In this review article, we survey the history, development and recent progress in understanding the mechanisms of BPVE, with a focus on the shift current mechanism, an intrinsic BPVE that is universal to all materials lacking inversion symmetry. In addition to explaining the theory of shift current, materials design opportunities and challenges will be discussed for future applications of the BPVE.

  17. YBCO step-edge junctions with high IcRn

    NASA Astrophysics Data System (ADS)

    Mitchell, E. E.; Foley, C. P.

    2010-06-01

    Step-edge junctions represent one type of grain boundary Josephson junction employed in high-temperature superconducting junction technology. To date, the majority of results published in the literature focus on [001]-tilt grain boundary junctions (GBJs) produced using bicrystal substrates. We investigate the step morphology and YBCO (yttrium barium copper oxide) film structure of YBCO-based step-edge junctions on MgO [001] substrates which structurally resemble [100]-tilt junctions. High-resolution electron microscopy reveals a clean GBJ interface of width ~ 1 nm and a single junction at the top edge. The dependence of the transport properties on the MgO step-edge and junction morphology is examined at 4.2 K, to enable direct comparison with results for other junction studies such as [001]-tilt and [100]-tilt junctions and building on previously published 77 K data. MgO step-edge junctions show a slower reduction in critical current density with step angle compared with [001]-tilt junctions. For optimized step parameters, transport measurements revealed large critical current and normal resistance (IcRN) products (~3-5 mV), comparable with the best results obtained in other kinds of [100]-tilt GBJs in YBCO at 4.2 K. Junction-based devices such as SQUIDs (superconducting quantum interference devices) and THz imagers show excellent performance when MgO-based step-edge junctions are used.

  18. Gate-controlled energy barrier at a graphene/molecular semiconductor junction

    NASA Astrophysics Data System (ADS)

    Parui, S.; Pietrobon, L.; Ciudad, D.; Velez, S.; Sun, X.; Stoliar, P.; Casanova, F.; Hueso, L. E.

    The formation of an energy barrier at a metal/molecular semiconductor junction is both a ubiquitous phenomenon as well as the subject of intense research in order to improve the performance of molecular semiconductor-based electronic and optoelectronic devices. For these devices, a junction with a large energy barrier provides rectification, leading to a diode behavior, whereas a relatively small energy barrier provides nearly-ohmic behavior, resulting in efficient carrier injection (extraction) into the molecular semiconductor. Typically, a specific metal/molecular semiconductor combination leads to a fixed energy barrier; therefore, the possibility of a gate-controlled energy barrier is very appealing for advanced applications. Here, we present a graphene/C60 junction-based vertical field-effect transistor in which we demonstrate control of the interfacial energy-barrier such that the junction switches from a highly rectifying diode at negative gate voltages to a nearly-ohmic behavior at positive gate voltages and at room temperature. We extract an energy-barrier modulation of up to 660 meV, a transconductance of up to five orders of magnitude and a gate-modulated photocurrent.

  19. CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Tunneling Conductance in a Normal Metal/Ferromagnetic Superconductor Nano-Junction at a Finite Temperature

    NASA Astrophysics Data System (ADS)

    Hamidreza, Emamipour; M. R., Abolhassani

    2011-01-01

    In this study, we investigate the tunneling conductance at a finite temperature in a normal metal/ferromagnetic superconductor nano-junction where the ferromagnetic superconductor (FS) is in three different cooper pairing states: spin singlet s-wave pairing (SWP), spin triplet opposite spin pairing (OSP), and spin triplet equal spin pairing (ESP) while including Fermi wave mismatch (FWM) and effective mass mismatch (EMM) in two sides of the nano-junction. We find that the conductance shows clearly different behaviors all depending on the symmetries of cooper pairing in a manner that the conductance spectra shows a gap-like structure, two interior dips structure and zero bias peak for SWP, OSP, and ESP, respectively. Also, the effective FS gap (Δeff) is a linear and decreasing function of exchange field. The slope of (Δeff) versus exchange field for OSP is twice the SWP. Thus, we can determine the spin polarization of N/FS nano-junction based on the dependence of (Δeff) to exchange field.

  20. Coherent-state storage and retrieval between superconducting cavities using parametric frequency conversion

    SciTech Connect

    Sirois, A. J.; Castellanos-Beltran, M. A.; DeFeo, M. P.; Ranzani, L.; Lecocq, F.; Simmonds, R. W.; Teufel, J. D.; Aumentado, J.

    2015-04-27

    In superconducting quantum information, machined aluminum superconducting cavities have proven to be a well-controlled, low-dissipation electromagnetic environment for quantum circuits such as qubits. They can possess large internal quality factors, Q{sub int} > 10{sup 8}, and present the possibility of storing quantum information for times far exceeding those of microfabricated circuits. However, in order to be useful as a storage element, these cavities require a fast “read/write” mechanism—in other words, they require tunable coupling between other systems of interest such as other cavity modes and qubits, as well as any associated readout hardware. In this work, we demonstrate these qualities in a simple dual cavity architecture in which a low-Q “readout” mode is parametrically coupled to a high-Q “storage” mode, allowing us to store and retrieve classical information. Specifically, we employ a flux-driven Josephson junction-based coupling scheme to controllably swap coherent states between two cavities, demonstrating full, sequenced control over the coupling rates between modes.

  1. Loss of the Coffin-Lowry syndrome-associated gene RSK2 alters ERK activity, synaptic function and axonal transport in Drosophila motoneurons.

    PubMed

    Beck, Katherina; Ehmann, Nadine; Andlauer, Till F M; Ljaschenko, Dmitrij; Strecker, Katrin; Fischer, Matthias; Kittel, Robert J; Raabe, Thomas

    2015-11-01

    Plastic changes in synaptic properties are considered as fundamental for adaptive behaviors. Extracellular-signal-regulated kinase (ERK)-mediated signaling has been implicated in regulation of synaptic plasticity. Ribosomal S6 kinase 2 (RSK2) acts as a regulator and downstream effector of ERK. In the brain, RSK2 is predominantly expressed in regions required for learning and memory. Loss-of-function mutations in human RSK2 cause Coffin-Lowry syndrome, which is characterized by severe mental retardation and low IQ scores in affected males. Knockout of RSK2 in mice or the RSK ortholog in Drosophila results in a variety of learning and memory defects. However, overall brain structure in these animals is not affected, leaving open the question of the pathophysiological consequences. Using the fly neuromuscular system as a model for excitatory glutamatergic synapses, we show that removal of RSK function causes distinct defects in motoneurons and at the neuromuscular junction. Based on histochemical and electrophysiological analyses, we conclude that RSK is required for normal synaptic morphology and function. Furthermore, loss of RSK function interferes with ERK signaling at different levels. Elevated ERK activity was evident in the somata of motoneurons, whereas decreased ERK activity was observed in axons and the presynapse. In addition, we uncovered a novel function of RSK in anterograde axonal transport. Our results emphasize the importance of fine-tuning ERK activity in neuronal processes underlying higher brain functions. In this context, RSK acts as a modulator of ERK signaling.

  2. Towards sub-nanometer real-space observation of spin and orbital magnetism at the Fe/MgO interface.

    PubMed

    Thersleff, Thomas; Muto, Shunsuke; Werwiński, Mirosław; Spiegelberg, Jakob; Kvashnin, Yaroslav; Hjӧrvarsson, Björgvin; Eriksson, Olle; Rusz, Ján; Leifer, Klaus

    2017-03-24

    While the performance of magnetic tunnel junctions based on metal/oxide interfaces is determined by hybridization, charge transfer, and magnetic properties at the interface, there are currently only limited experimental techniques with sufficient spatial resolution to directly observe these effects simultaneously in real-space. In this letter, we demonstrate an experimental method based on Electron Magnetic Circular Dichroism (EMCD) that will allow researchers to simultaneously map magnetic transitions and valency in real-space over interfacial cross-sections with sub-nanometer spatial resolution. We apply this method to an Fe/MgO bilayer system, observing a significant enhancement in the orbital to spin moment ratio that is strongly localized to the interfacial region. Through the use of first-principles calculations, multivariate statistical analysis, and Electron Energy-Loss Spectroscopy (EELS), we explore the extent to which this enhancement can be attributed to emergent magnetism due to structural confinement at the interface. We conclude that this method has the potential to directly visualize spin and orbital moments at buried interfaces in magnetic systems with unprecedented spatial resolution.

  3. Ultrasensitive mechanical crack-based sensor inspired by the spider sensory system.

    PubMed

    Kang, Daeshik; Pikhitsa, Peter V; Choi, Yong Whan; Lee, Chanseok; Shin, Sung Soo; Piao, Linfeng; Park, Byeonghak; Suh, Kahp-Yang; Kim, Tae-il; Choi, Mansoo

    2014-12-11

    Recently developed flexible mechanosensors based on inorganic silicon, organic semiconductors, carbon nanotubes, graphene platelets, pressure-sensitive rubber and self-powered devices are highly sensitive and can be applied to human skin. However, the development of a multifunctional sensor satisfying the requirements of ultrahigh mechanosensitivity, flexibility and durability remains a challenge. In nature, spiders sense extremely small variations in mechanical stress using crack-shaped slit organs near their leg joints. Here we demonstrate that sensors based on nanoscale crack junctions and inspired by the geometry of a spider's slit organ can attain ultrahigh sensitivity and serve multiple purposes. The sensors are sensitive to strain (with a gauge factor of over 2,000 in the 0-2 per cent strain range) and vibration (with the ability to detect amplitudes of approximately 10 nanometres). The device is reversible, reproducible, durable and mechanically flexible, and can thus be easily mounted on human skin as an electronic multipixel array. The ultrahigh mechanosensitivity is attributed to the disconnection-reconnection process undergone by the zip-like nanoscale crack junctions under strain or vibration. The proposed theoretical model is consistent with experimental data that we report here. We also demonstrate that sensors based on nanoscale crack junctions are applicable to highly selective speech pattern recognition and the detection of physiological signals. The nanoscale crack junction-based sensory system could be useful in diverse applications requiring ultrahigh displacement sensitivity.

  4. Understanding the failure mechanisms of microwave bipolar transistors caused by electrostatic discharge

    NASA Astrophysics Data System (ADS)

    Jin, Liu; Yongguang, Chen; Zhiliang, Tan; Jie, Yang; Xijun, Zhang; Zhenxing, Wang

    2011-10-01

    Electrostatic discharge (ESD) phenomena involve both electrical and thermal effects, and a direct electrostatic discharge to an electronic device is one of the most severe threats to component reliability. Therefore, the electrical and thermal stability of multifinger microwave bipolar transistors (BJTs) under ESD conditions has been investigated theoretically and experimentally. 100 samples have been tested for multiple pulses until a failure occurred. Meanwhile, the distributions of electric field, current density and lattice temperature have also been analyzed by use of the two-dimensional device simulation tool Medici. There is a good agreement between the simulated results and failure analysis. In the case of a thermal couple, the avalanche current distribution in the fingers is in general spatially unstable and results in the formation of current crowding effects and crystal defects. The experimental results indicate that a collector-base junction is more sensitive to ESD than an emitter-base junction based on the special device structure. When the ESD level increased to 1.3 kV, the collector-base junction has been burnt out first. The analysis has also demonstrated that ESD failures occur generally by upsetting the breakdown voltage of the dielectric or overheating of the aluminum-silicon eutectic. In addition, fatigue phenomena are observed during ESD testing, with devices that still function after repeated low-intensity ESDs but whose performances have been severely degraded.

  5. Expression of an anti-botulinum toxin A neutralizing single-chain Fv recombinant antibody in transgenic tobacco.

    PubMed

    Almquist, Kurt C; McLean, Michael D; Niu, Yongqing; Byrne, Greg; Olea-Popelka, Fernando C; Murrant, Coral; Barclay, Jack; Hall, J Christopher

    2006-03-15

    Botulinum neurotoxins (BoNTs) are the most poisonous substances known and are thus classified as high-risk threats for use as bioterror agents. To examine the potential of transgenic plants as bioreactors for the production of BoNT antidotes, we transformed tobacco with an optimized, synthetic gene encoding a botulinum neurotoxin A (BoNT/A) neutralizing single-chain Fv (scFv) recombinant antibody fragment. In vitro mouse muscle twitch assays demonstrated the functional utility of this scFv extracted from tobacco for neutralizing the paralytic effects of BoNT/A at neuromuscular junctions. Based on the efficiency of the scFv capture process and the dose required to antidote a human being, 1-2 ha of this tobacco could yield up to 4 kg of scFv, which would be enough to contribute to the manufacture of 1,000,000 therapeutic doses of a monoclonal antibody (mAb) cocktail capable of neutralizing the effects of BoNT poisoning. Transgenic plants could provide an inexpensive production platform for expression of multiple mAbs toward the creation of polyclonal therapies (i.e. pooled mAbs) as the next improvement in recombinant antibody therapy.

  6. Magneto-tunable photocurrent in manganite-based heterojunctions.

    PubMed

    Sheng, Z G; Nakamura, M; Koshibae, W; Makino, T; Tokura, Y; Kawasaki, M

    2014-08-01

    Correlated electron oxide heterojunctions and their photovoltaic effect have attracted increasing attention from the viewpoints of both possible application to novel devices and basic science. In such junctions, correlated electron physics has to be taken into account in addition to conventional semiconductor modelling to explain distinctively emerging features. However, extracting novel functionalities has not been easy because it is not possible to predict their interfacial properties solely from their bulk characteristics. Here we describe a magneto-tunable photocurrent in a pn junction based on a correlated electron oxide La0.7Sr0.3MnO3 combined with a semiconducting SrTiO3 substrate. On applying an epitaxial strain, the photocurrent is enhanced threefold, which is increased 30% further by a magnetic field. Such a magneto-tunable effect is possible for only a narrow window of the correlated gap, which is itself adjusted by bandwidth and temperature. These results provide a guideline for utilization of correlated phenomena into the novel electronic devices.

  7. Improving photovoltaic performance through radiative cooling in both terrestrial and extraterrestrial environments.

    PubMed

    Safi, Taqiyyah S; Munday, Jeremy N

    2015-09-21

    The method of detailed balance, introduced by Shockley and Queisser, is often used to find an upper theoretical limit for the efficiency of semiconductor pn-junction based photovoltaics. Typically the solar cell is assumed to be at an ambient temperature of 300 K. In this paper, we describe and analyze the use of radiative cooling techniques to lower the solar cell temperature below the ambient to surpass the detailed balance limit for a cell in contact with an ideal heat sink. We show that by combining specifically designed radiative cooling structures with solar cells, efficiencies higher than the limiting efficiency achievable at 300 K can be obtained for solar cells in both terrestrial and extraterrestrial environments. We show that our proposed structure yields an efficiency 0.87% higher than a typical PV module at operating temperatures in a terrestrial application. We also demonstrate an efficiency advantage of 0.4-2.6% for solar cells in an extraterrestrial environment in near-earth orbit.

  8. Towards sub-nanometer real-space observation of spin and orbital magnetism at the Fe/MgO interface

    PubMed Central

    Thersleff, Thomas; Muto, Shunsuke; Werwiński, Mirosław; Spiegelberg, Jakob; Kvashnin, Yaroslav; Hjӧrvarsson, Björgvin; Eriksson, Olle; Rusz, Ján; Leifer, Klaus

    2017-01-01

    While the performance of magnetic tunnel junctions based on metal/oxide interfaces is determined by hybridization, charge transfer, and magnetic properties at the interface, there are currently only limited experimental techniques with sufficient spatial resolution to directly observe these effects simultaneously in real-space. In this letter, we demonstrate an experimental method based on Electron Magnetic Circular Dichroism (EMCD) that will allow researchers to simultaneously map magnetic transitions and valency in real-space over interfacial cross-sections with sub-nanometer spatial resolution. We apply this method to an Fe/MgO bilayer system, observing a significant enhancement in the orbital to spin moment ratio that is strongly localized to the interfacial region. Through the use of first-principles calculations, multivariate statistical analysis, and Electron Energy-Loss Spectroscopy (EELS), we explore the extent to which this enhancement can be attributed to emergent magnetism due to structural confinement at the interface. We conclude that this method has the potential to directly visualize spin and orbital moments at buried interfaces in magnetic systems with unprecedented spatial resolution. PMID:28338011

  9. Electron transfer mediating properties of hydrocarbons as a function of chain length: a differential scanning conductive tip atomic force microscopy investigation.

    PubMed

    Scaini, Denis; Castronovo, Matteo; Casalis, Loredana; Scoles, Giacinto

    2008-03-01

    The development of novel molecular and biomolecular devices relies on the understanding of charge transport across molecule-substrate interfaces. However, different strategies adopted so far for fabricating and studying transport through metal-molecule-metal junctions yield values for the transport coefficients that differ by up to orders of magnitude even for the same junction. Conductive tip atomic force microscopy (CT-AFM) allows for the simultaneous measurement of transport and morphological properties of molecular assemblies, but absolute transport measurements depend on the nature of the AFM tip-molecule contact. In this work we present a differential approach to the study of metal-molecule-metal junctions based on the combination of AFM-driven nanolithography and CT-AFM. We nanograft patches of alkanethiol molecules in a self-assembled monolayer of alkanethiol molecules of different chain length and measure by CT-AFM the morphology and the transport properties of the nanopatches and of the reference layer. The method allows for the determination of the differential resistance between the two molecular layers and is thus independent of environmental factors. The validity of this approach is demonstrated by measuring the tunneling decay constant of alkanethiols as a function of their length.

  10. Exploring tight junction alteration using double fluorescent probe combination of lanthanide complex with gold nanoclusters

    NASA Astrophysics Data System (ADS)

    Wang, Xinyi; Wang, Na; Yuan, Lan; Li, Na; Wang, Junxia; Yang, Xiaoda

    2016-08-01

    Tight junctions play a key role in restricting or regulating passage of liquids, ions and large solutes through various biological barriers by the paracellular route. Changes in paracellular permeation indicate alteration of the tight junction. However, it is very difficult to obtain the structural change information by measuring paracellular flux based on transepithelial electrical resistance or using fluorescein-labeled dextrans. Here we show that the BSA and GSH stabilized gold nanoclusters exhibit marginal cytotoxicity and pass through the MDCK monolayer exclusively through the paracellular pathway. We propose a double fluorescence probe strategy, the combination of a proven paracellular indicator (europium complex) with fluorescent gold nanoclusters. We calculate changes of structural parameters in tight junctions based on determination of the diffusion coefficients of the probes. Two different types of tight junction openers are used to validate our strategy. Results show that EDTA disrupts tight junction structures and induces large and smooth paracellular pore paths with an average radius of 17 nm, but vanadyl complexes induce paths with the radius of 6 nm. The work suggests that the double fluorescence probe strategy is a useful and convenient approach for in vitro investigation of tight junction structural alternations caused by pharmacological or pathological events.

  11. Thermoelectricity at the molecular scale: a large Seebeck effect in endohedral metallofullerenes.

    PubMed

    Lee, See Kei; Buerkle, Marius; Yamada, Ryo; Asai, Yoshihiro; Tada, Hirokazu

    2015-12-28

    Single molecule devices provide a unique system to study the thermoelectric energy conversion at an atomistic level and can provide valuable information for the design of organic thermoelectric materials. Here we present a comprehensive study of the thermoelectric transport properties of molecular junctions based on C(82), Gd@C(82), and Ce@C(82). We combine precise scanning tunneling microscope break-junction measurements of the thermopower and conductance with quantitatively accurate self-energy-corrected first-principles transport calculations. We find that all three fullerene derivatives give rise to a negative thermopower (n-conducting). The absolute value, however, is much larger for the Gd@C(82) and Ce@C(82) junctions. The conductance, on the other hand, remains comparable for all three systems. The power factor determined for the Gd@C(82) based junction is so far the highest obtained for a single-molecule device. Although the encapsulated metal atom does not directly contribute to the transport, we show that the observed enhancement of the thermopower for Gd@C(82) and Ce@C(82) is elucidated by the substantial changes in the electronic- and geometrical structure of the fullerene molecule induced by the encapsulated metal atom.

  12. Exploring tight junction alteration using double fluorescent probe combination of lanthanide complex with gold nanoclusters

    PubMed Central

    Wang, Xinyi; Wang, Na; Yuan, Lan; Li, Na; Wang, Junxia; Yang, Xiaoda

    2016-01-01

    Tight junctions play a key role in restricting or regulating passage of liquids, ions and large solutes through various biological barriers by the paracellular route. Changes in paracellular permeation indicate alteration of the tight junction. However, it is very difficult to obtain the structural change information by measuring paracellular flux based on transepithelial electrical resistance or using fluorescein-labeled dextrans. Here we show that the BSA and GSH stabilized gold nanoclusters exhibit marginal cytotoxicity and pass through the MDCK monolayer exclusively through the paracellular pathway. We propose a double fluorescence probe strategy, the combination of a proven paracellular indicator (europium complex) with fluorescent gold nanoclusters. We calculate changes of structural parameters in tight junctions based on determination of the diffusion coefficients of the probes. Two different types of tight junction openers are used to validate our strategy. Results show that EDTA disrupts tight junction structures and induces large and smooth paracellular pore paths with an average radius of 17 nm, but vanadyl complexes induce paths with the radius of 6 nm. The work suggests that the double fluorescence probe strategy is a useful and convenient approach for in vitro investigation of tight junction structural alternations caused by pharmacological or pathological events. PMID:27574102

  13. Superfluid qubit systems with ring shaped optical lattices

    PubMed Central

    Amico, Luigi; Aghamalyan, Davit; Auksztol, Filip; Crepaz, Herbert; Dumke, Rainer; Kwek, Leong Chuan

    2014-01-01

    We study an experimentally feasible qubit system employing neutral atomic currents. Our system is based on bosonic cold atoms trapped in ring-shaped optical lattice potentials. The lattice makes the system strictly one dimensional and it provides the infrastructure to realize a tunable ring-ring interaction. Our implementation combines the low decoherence rates of neutral cold atoms systems, overcoming single site addressing, with the robustness of topologically protected solid state Josephson flux qubits. Characteristic fluctuations in the magnetic fields affecting Josephson junction based flux qubits are expected to be minimized employing neutral atoms as flux carriers. By breaking the Galilean invariance we demonstrate how atomic currents through the lattice provide an implementation of a qubit. This is realized either by artificially creating a phase slip in a single ring, or by tunnel coupling of two homogeneous ring lattices. The single qubit infrastructure is experimentally investigated with tailored optical potentials. Indeed, we have experimentally realized scaled ring-lattice potentials that could host, in principle, n ~ 10 of such ring-qubits, arranged in a stack configuration, along the laser beam propagation axis. An experimentally viable scheme of the two-ring-qubit is discussed, as well. Based on our analysis, we provide protocols to initialize, address, and read-out the qubit. PMID:24599096

  14. High-Resolution Gamma-Ray Spectrometers using Bulk Absorbers Coupled to Mo/Cu Multilayer Superconducting Transition-Edge Sensors

    SciTech Connect

    Chow, D.T.; Loshak, A.; Van Den Berg, M.L.; Frank, M.; Barbee Jr., T.W.; Labov, S.E.

    2000-07-04

    In x-ray and gamma-ray spectroscopy, it is desirable to have detectors with high energy resolution and high absorption efficiency. At LLNL, we have developed superconducting tunnel junction-based single photon x-ray detectors with thin film absorbers that have achieved these goals for photon energies up to 1 keV. However, for energies above 1 keV, the absorption efficiency of these thin-film detectors decreases drastically. We are developing the use of high-purity superconducting bulk materials as microcalorimeter absorbers for high-energy x-rays and gamma rays. The increase in absorber temperature due to incident photons is sensed by a superconducting transition-edge sensor (TES) composed of a Mo/Cu multilayer thin film. Films of Mo and Cu are mutually insoluble and therefore very stable and can be annealed. The multilayer structure allows scaling in thickness to optimize heat capacity and normal state resistance. We measured an energy resolution of 70 eV for 60 keV incident gamma-rays with a 1 x 1 x 0.25 mm{sup 3} Sn absorber. We present x-ray and gamma-ray results from this detector design with a Sn absorber. We also propose the use of an active negative feedback voltage bias to improve the performance of our detector and show preliminary results.

  15. Optimization on photoelectric detection based on stacked La{sub 0.9}Sr{sub 0.1}MnO{sub 3-{delta}}/LaAlO{sub 3-{delta}} multijunctions

    SciTech Connect

    Jie Xing; Hui Yinghao; Er Jiaguo; Fang Yang

    2011-08-01

    Three multijunctions consisting of La{sub 0.9}Sr{sub 0.1}MnO{sub 3-{delta}} and LaAlO{sub 3-{delta}} on Si substrate have been fabricated under different oxygen pressures by laser molecular beam epitaxy. They exhibit nonlinear and rectifying current-voltage characteristics and evident photocurrent response to He-Ne laser illumination. Experimental results indicate that the periodically stacked multijunction grown under lower oxygen pressure shows a better rectification behavior and a higher photocurrent. The photovoltaic responsivities of the multijunctions are enhanced greatly at reverse bias and are much higher than that of a similarly grown single p-n junction. Based on the band structure of the multilayers, a possible mechanism of the photovoltaic process was proposed. A high photovoltage responsivity of 168.6 mV/mW has been achieved at - 6 V bias; this demonstrates the potential of the present multijunction configuration for photodetectors operating at room temperature.

  16. Investigating photoresponse in graphene by light polarization

    NASA Astrophysics Data System (ADS)

    Eginligil, M.; Cao, B. C.; Wang, Z. L.; Soci, C.; Yu, T.

    2014-03-01

    We report our photocurrent studies on single layer graphene (SLG), bilayer graphene (BLG) and trilayer graphene (TLG) by exciting with circularly polarized light. In addition to p-n junctions based on gated graphene field-effect-transistor (g-FET), it was recently demonstrated that in the graphene/metal interface large photocurrent (PC) can be generated and this PC can be manipulated by backgate voltage in a simple g-FET. In this work we fabricated g-FETs from mechanically exfoliated graphene and explored backgate voltage dependence of photon drag effect (PDE), linear and circular photogalvanic effect (CPGE) of SLG, BLG and TLG. In BLG, we noticed a cos θ dependence of the measured PC, where θ is the angle of incident light polarization, in addition to PDE and CPGE effects which have cos4 θ and sin2 θ dependence, respectively. This cos θ dependence is attributed to the Berry curvature related valley PC, which can be induced as a result of broken inversion symmetry and asymmetry in the two low energy valleys of BLG. The latter is absent in SLG and peculiar for ABA stacked TLG. By varying backgate voltage we distinguish all helicity dependent PC contributions. Our data show good agreement with the theory. Supported by the National Research Foundation of Singapore under Award No. NRF-RF2010-07 and MOE Tier 2 MOE2012-T2-2-049.

  17. Mesenchymal-epithelial transitions: spontaneous and cumulative syntheses of epithelial marker molecules and their assemblies to novel cell junctions connecting human hematopoietic tumor cells to carcinomatoid tissue structures.

    PubMed

    Franke, Werner W; Rickelt, Steffen

    2011-12-01

    Using biochemical as well as light- and electron-microscopic immunolocalization methods, in cultures of unicellular human blood tumor cells, we have studied the phenomenon of spontaneous and cumulative syntheses of certain epithelial proteins and glycoproteins and their assemblies to two major kinds of novel cell-cell junctions, adhering junctions (AJs) and junctions based on the epithelial cell adhesion molecule (EpCAM). More than two decades, we have selected and characterized clonal sublines of multipotential hematopoietic K562 cells, which are enriched in newly formed AJs based on cis-clusters of desmoglein Dsg2, in some sublines accompanied by desmocollin Dsc2. Both desmosomal cadherins can be anchored in a submembranous plaque containing plakoglobin and plakophilins Pkp2 and Pkp3, with or without other armadillo proteins and desmoplakin. Also, these cells are often connected by an additional, extended junction system, in which the transmembrane epithelial glycoprotein EpCAM is associated with a cytoplasmic plaque rich in several actin-binding proteins such as afadin, α-actinin, ezrin and vinculin. Both kinds of junctions contribute to connections of K562 cells into epithelioid monolayers or even three-dimensional, tissue-like structures, thus markedly changing the cell biological nature and behavior of the resulting tumor subforms (mesenchymal-epithelial transitions). We discuss molecular mechanisms involved in the formation and function of these junctions, also with respect to tumor spread and metastasis, as well as diagnostic and therapeutic consequences.

  18. Towards sub-nanometer real-space observation of spin and orbital magnetism at the Fe/MgO interface

    NASA Astrophysics Data System (ADS)

    Thersleff, Thomas; Muto, Shunsuke; Werwiński, Mirosław; Spiegelberg, Jakob; Kvashnin, Yaroslav; Hjӧrvarsson, Björgvin; Eriksson, Olle; Rusz, Ján; Leifer, Klaus

    2017-03-01

    While the performance of magnetic tunnel junctions based on metal/oxide interfaces is determined by hybridization, charge transfer, and magnetic properties at the interface, there are currently only limited experimental techniques with sufficient spatial resolution to directly observe these effects simultaneously in real-space. In this letter, we demonstrate an experimental method based on Electron Magnetic Circular Dichroism (EMCD) that will allow researchers to simultaneously map magnetic transitions and valency in real-space over interfacial cross-sections with sub-nanometer spatial resolution. We apply this method to an Fe/MgO bilayer system, observing a significant enhancement in the orbital to spin moment ratio that is strongly localized to the interfacial region. Through the use of first-principles calculations, multivariate statistical analysis, and Electron Energy-Loss Spectroscopy (EELS), we explore the extent to which this enhancement can be attributed to emergent magnetism due to structural confinement at the interface. We conclude that this method has the potential to directly visualize spin and orbital moments at buried interfaces in magnetic systems with unprecedented spatial resolution.

  19. Spin electronic magnetic sensor based on functional oxides for medical imaging

    NASA Astrophysics Data System (ADS)

    Solignac, A.; Kurij, G.; Guerrero, R.; Agnus, G.; Maroutian, T.; Fermon, C.; Pannetier-Lecoeur, M.; Lecoeur, Ph.

    2015-09-01

    To detect magnetic signals coming from the body, in particular those produced by the electrical activity of the heart or of the brain, the development of ultrasensitive sensors is required. In this regard, magnetoresistive sensors, stemming from spin electronics, are very promising devices. For example, tunnel magnetoresistance (TMR) junctions based on MgO tunnel barrier have a high sensitivity. Nevertheless, TMR also often have high level of noise. Full spin polarized materials like manganite La0.67Sr0.33MnO3 (LSMO) are attractive alternative candidates to develop such sensors because LSMO exhibits a very low 1/f noise when grown on single crystals, and a TMR response has been observed with values up to 2000%. This kind of tunnel junctions, when combined with a high Tc superconductor loop, opens up possibilities to develop full oxide structures working at liquid nitrogen temperature and suitable for medical imaging. In this work, we investigated on LSMO-based tunnel junctions the parameters controlling the overall system performances, including not only the TMR ratio, but also the pinning of the reference layer and the noise floor. We especially focused on studying the effects of the quality of the barrier, the interface and the electrode, by playing with materials and growth conditions.

  20. Anomalous Fraunhofer interference in epitaxial superconductor-semiconductor Josephson junctions

    NASA Astrophysics Data System (ADS)

    Suominen, H. J.; Danon, J.; Kjaergaard, M.; Flensberg, K.; Shabani, J.; Palmstrøm, C. J.; Nichele, F.; Marcus, C. M.

    2017-01-01

    We investigate patterns of critical current as a function of perpendicular and in-plane magnetic fields in superconductor-semiconductor-superconductor (SNS) junctions based on InAs/InGaAs heterostructures with an epitaxial Al layer. This material system is of interest due to its exceptionally good superconductor-semiconductor coupling, as well as large spin-orbit interaction and g factor in the semiconductor. Thin epitaxial Al allows the application of large in-plane field without destroying superconductivity. For fields perpendicular to the junction, flux focusing results in aperiodic node spacings in the pattern of critical currents known as Fraunhofer patterns by analogy to the related interference effect in optics. Adding an in-plane field yields two further anomalies in the pattern. First, higher-order nodes are systematically strengthened, indicating current flow along the edges of the device, as a result of confinement of Andreev states driven by an induced flux dipole; second, asymmetries in the interference appear that depend on the field direction and magnitude. A model is presented, showing good agreement with experiment, elucidating the roles of flux focusing, Zeeman and spin-orbit coupling, and disorder in producing these effects.

  1. Modeling and theoretical efficiency of a silicon nanowire based thermoelectric junction with area enhancement

    SciTech Connect

    Seong, M; Sadhu, JS; Ma, J; Ghossoub, MG; Sinha, S

    2012-06-15

    Recent experimental work suggests that individual silicon nanowires with rough surfaces possess a thermoelectric figure of merit as high as 0.6 near room temperature. This paper addresses the possibility of using an array of such nanowires in a thermoelectric junction for generation. Employing a model of frequency dependent phonon boundary scattering, we estimate the effective thermal conductivity of the array and investigate heat flow through the junction. We show that charge transport is largely unaffected by the roughness scales considered. Enhancing the area for heat exchange at an individual 200 mu m x 200 mu m p-n junction yields significant temperature differences across the junction leading to power >0.6 mW and efficiency >1.5% for a junction with effective thermal conductivity <5 W/mK, when the source and sink are at 450 K and 300 K, respectively. We show that relatively short nanowires of similar to 50 mu m length are sufficient for obtaining peak power and reasonable efficiency. This substantially reduces the challenge of engineering low resistivity electrical contacts that critically affect power and efficiency. This paper provides insight into how fundamental transport in relation to bulk heat transfer and charge transport, affects the performance of thermoelectric junctions based on nanostructured materials. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4728189

  2. Ultrasensitive mechanical crack-based sensor inspired by the spider sensory system

    NASA Astrophysics Data System (ADS)

    Kang, Daeshik; Pikhitsa, Peter V.; Choi, Yong Whan; Lee, Chanseok; Shin, Sung Soo; Piao, Linfeng; Park, Byeonghak; Suh, Kahp-Yang; Kim, Tae-Il; Choi, Mansoo

    2014-12-01

    Recently developed flexible mechanosensors based on inorganic silicon, organic semiconductors, carbon nanotubes, graphene platelets, pressure-sensitive rubber and self-powered devices are highly sensitive and can be applied to human skin. However, the development of a multifunctional sensor satisfying the requirements of ultrahigh mechanosensitivity, flexibility and durability remains a challenge. In nature, spiders sense extremely small variations in mechanical stress using crack-shaped slit organs near their leg joints. Here we demonstrate that sensors based on nanoscale crack junctions and inspired by the geometry of a spider's slit organ can attain ultrahigh sensitivity and serve multiple purposes. The sensors are sensitive to strain (with a gauge factor of over 2,000 in the 0-2 per cent strain range) and vibration (with the ability to detect amplitudes of approximately 10 nanometres). The device is reversible, reproducible, durable and mechanically flexible, and can thus be easily mounted on human skin as an electronic multipixel array. The ultrahigh mechanosensitivity is attributed to the disconnection-reconnection process undergone by the zip-like nanoscale crack junctions under strain or vibration. The proposed theoretical model is consistent with experimental data that we report here. We also demonstrate that sensors based on nanoscale crack junctions are applicable to highly selective speech pattern recognition and the detection of physiological signals. The nanoscale crack junction-based sensory system could be useful in diverse applications requiring ultrahigh displacement sensitivity.

  3. Loss of the Coffin-Lowry syndrome-associated gene RSK2 alters ERK activity, synaptic function and axonal transport in Drosophila motoneurons

    PubMed Central

    Beck, Katherina; Ehmann, Nadine; Andlauer, Till F. M.; Ljaschenko, Dmitrij; Strecker, Katrin; Fischer, Matthias; Kittel, Robert J.; Raabe, Thomas

    2015-01-01

    ABSTRACT Plastic changes in synaptic properties are considered as fundamental for adaptive behaviors. Extracellular-signal-regulated kinase (ERK)-mediated signaling has been implicated in regulation of synaptic plasticity. Ribosomal S6 kinase 2 (RSK2) acts as a regulator and downstream effector of ERK. In the brain, RSK2 is predominantly expressed in regions required for learning and memory. Loss-of-function mutations in human RSK2 cause Coffin-Lowry syndrome, which is characterized by severe mental retardation and low IQ scores in affected males. Knockout of RSK2 in mice or the RSK ortholog in Drosophila results in a variety of learning and memory defects. However, overall brain structure in these animals is not affected, leaving open the question of the pathophysiological consequences. Using the fly neuromuscular system as a model for excitatory glutamatergic synapses, we show that removal of RSK function causes distinct defects in motoneurons and at the neuromuscular junction. Based on histochemical and electrophysiological analyses, we conclude that RSK is required for normal synaptic morphology and function. Furthermore, loss of RSK function interferes with ERK signaling at different levels. Elevated ERK activity was evident in the somata of motoneurons, whereas decreased ERK activity was observed in axons and the presynapse. In addition, we uncovered a novel function of RSK in anterograde axonal transport. Our results emphasize the importance of fine-tuning ERK activity in neuronal processes underlying higher brain functions. In this context, RSK acts as a modulator of ERK signaling. PMID:26398944

  4. Josephson current in a normal-metal nanowire coupled to a superconductor/ferromagnet/superconductor junction

    NASA Astrophysics Data System (ADS)

    Ebisu, Hiromi; Lu, Bo; Taguchi, Katsuhisa; Golubov, Alexander A.; Tanaka, Yukio

    2016-01-01

    We consider a superconducting nanowire proximity coupled to a superconductor/ferromagnet/superconductor (S/F/S) junction, where the magnetization penetrates into a superconducting segment in a nanowire decaying as ˜exp[-∣n/∣ ξ ] , where n is the site index and the ξ is the decay length. We tune chemical potential and spin-orbit coupling so that the topological superconducting regime hosting the Majorana fermion is realized for long ξ . We find that when ξ becomes shorter, zero energy state at the interface between a superconductor and a ferromagnet splits into two states at nonzero energy. Accordingly, the behavior of the Josephson current is drastically changed due to this "zero mode-nonzero mode crossover." By tuning the model parameters, we find an almost second-harmonic current-phase relation sin2 φ , where φ is the phase difference of the junction. Based on the analysis of Andreev bound state (ABS), we clarify that the current-phase relation is determined by coupling of the states within the energy gap. We find that the emergence of crossing points of ABS is a key ingredient to generate sin2 φ dependence in the current-phase relation. We further study both the energy and φ dependence of pair amplitudes in the ferromagnetic region. For large ξ , an odd-frequency spin-triplet s -wave component is dominant. The magnitude of the odd-frequency pair amplitude is enhanced at the energy level of ABS.

  5. The dynamic organic p-n junction.

    PubMed

    Matyba, Piotr; Maturova, Klara; Kemerink, Martijn; Robinson, Nathaniel D; Edman, Ludvig

    2009-08-01

    Static p-n junctions in inorganic semiconductors are exploited in a wide range of today's electronic appliances. Here, we demonstrate the in situ formation of a dynamic p-n junction structure within an organic semiconductor through electrochemistry. Specifically, we use scanning kelvin probe microscopy and optical probing on planar light-emitting electrochemical cells (LECs) with a mixture of a conjugated polymer and an electrolyte connecting two electrodes separated by 120 microm. We find that a significant portion of the potential drop between the electrodes coincides with the location of a thin and distinct light-emission zone positioned >30 microm away from the negative electrode. These results are relevant in the context of a long-standing scientific debate, as they prove that electrochemical doping can take place in LECs. Moreover, a study on the doping formation and dissipation kinetics provides interesting detail regarding the electronic structure and stability of the dynamic organic p-n junction, which may be useful in future dynamic p-n junction-based devices.

  6. Semiconducting ferroelectric perovskites with intermediate bands via B-site Bi5+ doping

    NASA Astrophysics Data System (ADS)

    Jiang, Lai; Grinberg, Ilya; Wang, Fenggong; Young, Steve M.; Davies, Peter K.; Rappe, Andrew M.

    2014-08-01

    We propose B-site Bi5+-doped ferroelectric perovskite materials as suitable candidates for the bulk photovoltaic effect and related solar applications. The low-lying 6s empty states of the electronegative Bi atom produce empty bands in the energy gap of the parent materials, effectively lowering the band gap by 1-2 eV, depending on the composition of the ferroelectric end member and the concentration of Bi5+ in the solid solution. The polarization decreases but survives upon doping, which enables the "shift-current" mechanism for photocurrent generation, while the decreased band gap allows absorption of much of the visible spectrum. The magnitude of shift-current response is calculated for 0.75Pb2InNbO6-0.25Ba2InBiO6 (PIN-BIB) and 0.75Pb2ScNbO6-0.25Ba2ScNbO6 (PSN-BSB) and is predicted to exceed the visible-light bulk photovoltaic response of all previously reported materials, including BiFeO3. Furthermore, the existence of their intermediate bands and multiple band gaps, combined with Fermi-level tuning by A-site co-doping, also allows for their potential application in traditional p -n junction-based solar cells as broad-spectrum photoabsorbers.

  7. Carbon Nanotube Sheet as Top Contact Electrode for Nanowires: Highly Versatile and Simple Process.

    PubMed

    Ternon, Céline; Dupas, Florence; Stein, Sergio; Aguirre, Carla; Dhalluin, Florian; Baron, Thierry

    2015-02-01

    In the past years, lots of research works were dedicated to nanowires and their integration into functional devices. However, despite the great potential of such materials, no device based on nanowires has been transferred in all-day-life. In fact, the vertical device integration is slowed down by the difficulty to contact easily the top electrode. With this work, we present a simple, elegant and versatile process for creating a top electrode contact on nanowires: a carbon nanotube sheet is suspended at the top of the nanowire field. The proof of concept is made through the realization of photovoltaic devices composed of an assembly of vertical PN-junctions based on silicon nanowires. For an illumination density of 100 mW . cm-2, our devices exhibit short circuit current density as high as 15 mA . cm-2. Due to the numerous advantages of the carbon nanotube sheets as top electrode, such as transparency, porosity, good mechanical performance and no need to embed nanowires, such simple and elegant technology should definitely find developments in every field of nanotechnology.

  8. Single-Molecule Diodes with High On/Off Ratios Through Environmental Control

    NASA Astrophysics Data System (ADS)

    Capozzi, Brian; Xia, Jianlong; Dell, Emma; Adak, Olgun; Liu, Zhen-Fei; Neaton, Jeffrey; Campos, Luis; Venkataraman, Latha

    2015-03-01

    Single-Molecule diodes were first proposed with an asymmetric molecule comprising a donor-bridge-acceptor architecture to mimic a semiconductor p-n junction. Progress in molecular electronics has led to the realization of several single-molecule diodes; these have relied on asymmetric molecular backbones, asymmetric molecule-electrode linkers, or asymmetric electrode materials. Despite these advances, molecular diodes have had limited potential for functional applications due to several pitfalls, including low rectification ratios (``on''/``off'' current ratios <10). Here, we introduce a powerful approach for inducing rectification in conventionally symmetric single-molecule junctions, taking advantage of environmental factors about the junction. By utilizing an asymmetric environment instead of an asymmetric molecule, we reproducibly achieve high rectification ratios at low operating voltages for molecular junctions based on a family of symmetric small-gap molecules. This technique serves as an unconventional approach for developing functional molecular-scale devices and probing their charge transport characteristics. Furthermore, this technique should be applicable to other nanoscale devices, providing a general route for tuning device properties.

  9. Molecules on si: electronics with chemistry.

    PubMed

    Vilan, Ayelet; Yaffe, Omer; Biller, Ariel; Salomon, Adi; Kahn, Antoine; Cahen, David

    2010-01-12

    Basic scientific interest in using a semiconducting electrode in molecule-based electronics arises from the rich electrostatic landscape presented by semiconductor interfaces. Technological interest rests on the promise that combining existing semiconductor (primarily Si) electronics with (mostly organic) molecules will result in a whole that is larger than the sum of its parts. Such a hybrid approach appears presently particularly relevant for sensors and photovoltaics. Semiconductors, especially Si, present an important experimental test-bed for assessing electronic transport behavior of molecules, because they allow varying the critical interface energetics without, to a first approximation, altering the interfacial chemistry. To investigate semiconductor-molecule electronics we need reproducible, high-yield preparations of samples that allow reliable and reproducible data collection. Only in that way can we explore how the molecule/electrode interfaces affect or even dictate charge transport, which may then provide a basis for models with predictive power.To consider these issues and questions we will, in this Progress Report, review junctions based on direct bonding of molecules to oxide-free Si.describe the possible charge transport mechanisms across such interfaces and evaluate in how far they can be quantified.investigate to what extent imperfections in the monolayer are important for transport across the monolayer.revisit the concept of energy levels in such hybrid systems.

  10. Signatures of time-reversal-invariant topological superconductivity in the Josephson effect

    NASA Astrophysics Data System (ADS)

    Mellars, Ehren; Béri, Benjamin

    2016-11-01

    For Josephson junctions based on s -wave superconductors, time-reversal symmetry is known to allow for powerful relations between the normal-state junction properties, the excitation spectrum, and the Josephson current. Here we provide analogous relations for Josephson junctions involving one-dimensional time-reversal-invariant topological superconductors supporting Majorana-Kramers pairs, considering both topological-topological and s -wave-topological junctions. Working in the regime where the junction is much shorter than the superconducting coherence length, we obtain a number of analytical and numerical results that hold for arbitrary normal-state conductance and the most general forms of spin-orbit coupling. The signatures of topological superconductivity we find include the fractional ac Josephson effect, which arises in topological-topological junctions provided that the energy relaxation is sufficiently slow. We also show, for both junction types, that robust signatures of topological superconductivity arise in the dc Josephson effect in the form of switches in the Josephson current due to zero-energy crossings of Andreev levels. The junction spin-orbit coupling enters the Josephson current only in the topological-topological case and in a manner determined by the switch locations, thereby allowing quantitative predictions for experiments with the normal-state conductance, the induced gaps, and the switch locations as inputs.

  11. Nonequilibrium and relaxation effects in tunnel superconducting junctions

    NASA Astrophysics Data System (ADS)

    Bezuglyi, E. V.; Vasenko, A. S.; Bratus', E. N.

    2017-02-01

    The specific property of a planar tunnel junction with thin-film diffusive plates and long enough leads is an essential enhancement of its transmission coefficient compared to the bare transparency of the tunnel barrier [1, 2]. In voltage-biased junctions, this creates favorable conditions for strong nonequilibrium of quasiparticles in the junction plates and leads, produced by multiparticle tunneling. We study theoretically the interplay between the nonequilibrium and relaxation processes in such junctions and found that nonequilibrium in the leads noticeably modifies the current-voltage characteristic at {eV}> 2{{Δ }}, especially the excess current, whereas strong diffusive relaxation restores the result of the classical tunnel model. At {eV}≤slant 2{{Δ }}, the diffusive relaxation decreases the peaks of the multiparticle currents. The inelastic relaxation in the junction plates essentially suppresses the n-particle currents (n> 2) by the factor n for odd and n/2 for even n. The results may be important for the problem of decoherence in Josephson-junction based superconducting qubits.

  12. Bottom-up proteomics of Escherichia coli using dynamic pH junction preconcentration and capillary zone electrophoresis-electrospray ionization-tandem mass spectrometry.

    PubMed

    Zhu, Guijie; Sun, Liangliang; Yan, Xiaojing; Dovichi, Norman J

    2014-07-01

    We report the use of the dynamic pH junction based capillary zone electrophoresis-electrospray ionization-tandem mass spectrometry (CZE-ESI-MS/MS) for bottom-up proteomics with an electrokinetically pumped sheath-flow nanospray capillary electrophoresis-mass spectrometry (CE-MS) interface and both LTQ-XL and LTQ-Orbitrap-Velos mass spectrometers. Conventional injection of 20 nL of a 1 mg/mL BSA digest identified 37 peptides and produced 66% sequence coverage. In contrast, pH junction injection of 130 nL (or larger) of a 0.05 mg/mL BSA digest identified 40 peptides and produced 70% coverage using a pH 6.5 sample buffer and the LTQ. A 20 nL conventional injection of a 1 mg/mL Escherichia coli digest identified 508 peptides and 199 proteins with the LTQ. A 400 nL pH junction injection of a 0.1 mg/mL E. coli digest identified 527 peptides and 179 proteins with the LTQ. Triplicate technical replicates of a 0.01 mg/mL sample with 400-nL injection volume using a pH junction identified 288 ± 9 peptides and 121 ± 5 proteins with the LTQ. There was outstanding concordance in migration time between the pH junction and normal injection. The pH junction produced narrower peaks and significant concentration for all but the most acidic components in the sample. Compared with the conventional stacking method, the pH junction method can generate comparable performance for small injection volume (20 nL) and significantly better concentration performance for a large injection volume (200 nL). We also applied the pH junction to three intact standard proteins and observed a >10× increase in peak intensity compared to conventional injection.

  13. Analysis and Suppression of Dark Currents in Mid-Wave Infrared Photodetectors

    NASA Astrophysics Data System (ADS)

    Savich, Gregory Robert

    Mid-wave infrared photodetectors have wide-ranging civilian and military applications but remain complicated and expensive to produce. Maximizing detector performance while also reducing costs is critical for furthering the efficacy of the technology. Understanding the causes of dark current generation in infrared detectors, the limitations defects impose on performance, and strategies for suppression of dark currents is important for maximizing performance and creating detector architectures that are more robust and cost effective. Ideal infrared detectors are expected to be limited by fundamental material properties rather than specific device architecture or material quality considerations. When defect concentrations are sufficiently low, a carefully engineered detector will exhibit the best possible performance; however, maintaining low defect concentrations is not always feasible. Detectors with elevated defect concentrations are subject to a series of defect-induced dark current mechanisms dependent on device architecture. Defect-dominated unipolar barrier detector architectures are typically subject to Shockley-Read-Hall generation and subsequent diffusion of carriers in quasi-neutral regions. Defect-dominated conventional photodiodes are also subject to neutral region Shockley-Read-Hall generation but Shockley-Read-Hall generation and trap-assisted-tunneling in the depletion layer will have a far greater effect on the overall dark current of a device. Unipolar barrier architecture detectors show greatly improved performance compared to conventional pn junction-based photodiodes. The performance of defect-limited nBn detectors is demonstrated, showing the effects of quasi-neutral region Shockley-Read-Hall in these devices and improved performance over conventional photodiodes. The unipolar barrier photodiode combines the advantages of the nBn with a pn junction architecture. A properly engineered unipolar barrier photodiode will suppress both surface leakage

  14. G4-FETs as Universal and Programmable Logic Gates

    NASA Technical Reports Server (NTRS)

    Johnson, Travis; Fijany, Amir; Mojarradi, Mohammad; Vatan, Farrokh; Toomarian, Nikzad; Kolawa, Elizabeth; Cristoloveanu, Sorin; Blalock, Benjamin

    2007-01-01

    An analysis of a patented generic silicon- on-insulator (SOI) electronic device called a G4-FET has revealed that the device could be designed to function as a universal and programmable logic gate. The universality and programmability could be exploited to design logic circuits containing fewer discrete components than are required for conventional transistor-based circuits performing the same logic functions. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET) superimposed in a single silicon island and can therefore be regarded as two transistors sharing the same body. A G4-FET can also be regarded as a single transistor having four gates: two side junction-based gates, a top MOS gate, and a back gate activated by biasing of the SOI substrate. Each of these gates can be used to control the conduction characteristics of the transistor; this possibility creates new options for designing analog, radio-frequency, mixed-signal, and digital circuitry. With proper choice of the specific dimensions for the gates, channels, and ancillary features of the generic G4-FET, the device could be made to function as a three-input, one-output logic gate. As illustrated by the truth table in the top part of the figure, the behavior of this logic gate would be the inverse (the NOT) of that of a majority gate. In other words, the device would function as a NOT-majority gate. By simply adding an inverter, one could obtain a majority gate. In contrast, to construct a majority gate in conventional complementary metal oxide/semiconductor (CMOS) circuitry, one would need four three-input AND gates and a four-input OR gate, altogether containing 32 transistors.

  15. Substrate engineering by hexagonal boron nitride/SiO2 for hysteresis-free graphene FETs and large-scale graphene p-n junctions.

    PubMed

    Xu, Hua; Wu, Juanxia; Chen, Yabin; Zhang, Haoli; Zhang, Jin

    2013-10-01

    We have explored an approach for the fabrication of intrinsic and hysteresis-free graphene field-effect transistors (FETs) and for the construction of graphene p-n junctions based on substrate engineering by hexagonal boron nitride (h-BN)/SiO2. The effect of various interfaces on the performance of the graphene FETs was systematically studied by constructing four types of graphene devices (graphene/SiO2 FETs, graphene/h-BN FETs, h-BN/graphene/SiO2 FETs, and h-BN/graphene/h-BN FETs). Graphene/SiO2 FETs and h-BN/graphene/SiO2 FETs always exhibit large hysteresis before and after annealing, whereas graphene/h-BN FETs and h-BN/graphene/h-BN FETs show intrinsic properties after annealing. Raman measurements also indicate that graphene on a SiO2 substrate contains large amounts of p-doping, whereas that on a h-BN substrate is intrinsic. Thus, the graphene/h-BN interface gives intrinsic and hysteresis-free graphene FETs, whilst the graphene/SiO2 interface affords p-doping and a hysteresis effect in the graphene FETs. This result is because h-BN serves as an insulation layer, which prevents charge trapping between the graphene and the charge traps at the graphene/SiO2 interface, which cause the hysteresis. In addition, the negligible electrostatic doping of h-BN into graphene also ensures the intrinsic and hysteresis-free properties of graphene/BN/SiO2 FETs. Moreover, benefitting from the p-doped and intrinsic features of graphene on SiO2 and h-BN substrates, respectively, large-scale graphene p-n junction superlattices with great potential difference are constructed and integrated into photodetector arrays by substrate engineering with h-BN/SiO2. Efficient hot carrier-assisted photocurrent was generated by laser excitation at the junction under ambient conditions.

  16. IMGT standardization for statistical analyses of T cell receptor junctions: the TRAV-TRAJ example.

    PubMed

    Bleakley, Kevin; Giudicelli, Véronique; Wu, Yan; Lefranc, Marie-Paule; Biau, Gérard

    2006-01-01

    The diversity of immunoglobulin (IG) and T cell receptor (TR) chains depends on several mechanisms: combinatorial diversity, which is a consequence of the number of V, D and J genes and the N-REGION diversity, which creates an extensive and clonal somatic diversity at the V-J and V-D-J junctions. For the IG, the diversity is further increased by somatic hypermutations. The number of different junctions per chain and per individual is estimated to be 10(12). We have chosen the human TRAV-TRAJ junctions as an example in order to characterize the required criteria for a standardized analysis of the IG and TR V-J and V-D-J junctions, based on the IMGT-ONTOLOGY concepts, and to serve as a first IMGT junction reference set (IMGT, http://imgt.cines.fr). We performed a thorough statistical analysis of 212 human rearranged TRAV-TRAJ sequences, which were aligned and analysed by the integrated IMGT/V-QUEST software, which includes IMGT/JunctionAnalysis, then manually expert-verified. Furthermore, we compared these 212 sequences with 37 other human TRAV-TRAJ junction sequences for which some particularities (potential sequence polymorphisms, sequencing errors, etc.) did not allow IMGT/JunctionAnalysis to provide the correct biological results, according to expert verification. Using statistical learning, we constructed an automatic warning system to predict if new, automatically analysed TRAV-TRAJ sequences should be manually re-checked. We estimated the robustness of this automatic warning system.

  17. Theory based design and optimization of materials for spintronics applications

    NASA Astrophysics Data System (ADS)

    Xu, Tianyi

    The Spintronics industry has developed rapidly in the past decade. Finding the right material is very important for Spintronics applications, which requires good understanding of the physics behind specific phenomena. In this dissertation, we will focus on two types of perpendicular transport phenomena, the current-perpendicular-to-plane giant-magneto-resistance (CPP-GMR) phenomenon and the tunneling phenomenon in the magnetic tunnel junctions. The Valet-Fert model is a very useful semi-classical approach for understanding the transport and spin-flip process in CPP-GMR. We will present a finite element based implementation for the Valet-Fert model which enables a practical way to calculate the electron transport in real CPP-GMR spin valves. It is very important to find high spin polarized materials for CPP-GMR spin valves. The half-metal, due to its full spin polarization, is of interest. We will propose a rational way to find half-metals based on the gap theorem. Then we will focus on the high-MR TMR phenomenon. The tunneling theory of electron transport in mesoscopic systems will be covered. Then we will calculate the transport properties of certain junctions with the help of Green's function under the Landauer-Buttiker formalism, also known as the scattering formalism. The damping constant determines the switching rate of a device. We can calculate it using a method based on the Extended Huckel Tight-Binding theory (EHTB). The symmetry filtering effect is very helpful for finding materials for TMR junctions. Based upon which, we find a good candidate material, MnAl, for TMR applications.

  18. Efficient G(sup 4)FET-Based Logic Circuits

    NASA Technical Reports Server (NTRS)

    Vatan, Farrokh

    2008-01-01

    A total of 81 optimal logic circuits based on four-gate field-effect transistors (G(sup 4)4FETs) have been designed to implement all Boolean functions of up to three variables. The purpose of this development was to lend credence to the expectation that logic circuits based on G(sup 4)FETs could be more efficient (in the sense that they could contain fewer transistors), relative to functionally equivalent logic circuits based on conventional transistors. A G(sup 4)FET a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET) superimposed in a single silicon island and can therefore be regarded as two transistors sharing the same body. A G(sup 4)FET can also be regarded as a single device having four gates: two side junction-based gates, a top MOS gate, and a back gate activated by biasing of a silicon-on-insulator substrate. Each of these gates can be used to control the conduction characteristics of the transistor; this possibility creates new options for designing analog, radio-frequency, mixed-signal, and digital circuitry. One such option is to design a G(sup 4)FET to function as a three-input NOT-majority gate, which has been shown to be a universal and programmable logic gate. Optimal NOT-majority-gate, G(sup 4)FET-based logic-circuit designs were obtained in a comparative study that also included formulation of functionally equivalent logic circuits based on NOR and NAND gates implemented by use of conventional transistors. In the study, the problem of finding the optimal design for each logic function and each transistor type was solved as an integer-programming optimization problem. Considering all 81 non-equivalent Boolean functions included in the study, it was found that in 63% of the cases, fewer logic gates (and, hence, fewer transistors) would be needed in the G(sup 4)FET-based implementations.

  19. Visualization of Anatomic Variation of the Anterior Septal Vein on Susceptibility-Weighted Imaging

    PubMed Central

    Chen, Zhengzhen; Qiao, Huihuang; Guo, Yu; Li, Jiance; Miao, Huizhong; Wen, Caiyun; Wen, Xindong; Zhang, Xiaofen; Yang, Xindong; Chen, Chengchun

    2016-01-01

    Background and Purpose Understanding the anatomy of the anterior septal vein (ASV) is critical for minimally invasive procedures to the third ventricle and for assessing lesion size and venous drainage in the anterior cranial fossa. Accordingly, this study evaluated topographic anatomy and anatomic variation of the ASV using susceptibility-weighted imaging (SWI). Methods Sixty volunteers were examined using a 3.0T MR system. The diameter of the ASV and distance between bilateral septal points were measured. ASVs were divided into types 1 (only drains frontal lobe) and 2 (drains both frontal lobe and head of the caudate nucleus). We evaluated the ASV-internal cerebral vein (ICV) junction based on its positional relationship with the appearance of a venous angle or a false venous angle and the foramen of Monro. Fused SW and T1-weighted images were used to observe positional relationships between the course of the ASV and the surrounding brain structures. Results The ASV and its small tributaries were clearly visualized in 120 hemispheres (100%). The average diameter of ASVs was 1.05±0.17 mm (range 0.9–1.6 mm). The average distance between bilateral septal points was 2.23±1.03 mm (range 1.3–6.6 mm). The ASV types 1 and 2 were in 77 (64.2%) and 43 (35.8%) hemispheres, respectively. In 83 (69.2%) hemispheres, the ASV-ICV junction was situated at the venous angle and the posterior margin of the foramen of Monro. In 37 (30.8%) hemispheres, the ASV-ICV junction was situated beyond the posterior margin of the foramen of Monro. The average distance between the posteriorly located ASV-ICV junction and the posterior margin of the foramen of Monro was 6.41±3.95 mm (range 2.4–15.9 mm). Conclusion Using SWI, the topographic anatomy and anatomic variation of the ASV were clearly demonstrated. Preoperative assessment of anatomic variation of the ASV may be advantageous for minimally invasive neurosurgical procedures. PMID:27716782

  20. Novel Optoelectronic Devices Using Intersubband Transitions in Gallium Arsenide/aluminum Gallium Arsenide Quantum Wells and Superlattices: Theory, Fabrication, and Measurement

    NASA Astrophysics Data System (ADS)

    Siao, Sueh-Wen

    shows interesting transport physics, but also potential for ultra-high speed circuit applications. Using MQW emitter, a high speed infrared phototransistor is proposed and investigated in this thesis. The other interesting HEMT-type phototransistor with 2DEG is also designed for potential high speed IR phototransistor applications. All-optical IR modulator by interband pumping is also studied. Since the electron-hole pairs are induced by optical pumping, the magnitude of the intersubband absorption can be directly modulated by the power of the pump light. One novel approach to populate the quantum well to required density level is also studied by electrical injection. As semiconductor lasers and LED's, the carrier density (electrons and holes) as high as 10^ {19} cm^{-3} can be injected from the PN junction. Based on these results, normal incidence IR spatial light modulator can be possible. (Abstract shortened by UMI.).

  1. Surface engineered two-dimensional and quasi-one-dimensional nanomaterials for electronic and optoelectronic devices

    NASA Astrophysics Data System (ADS)

    Du, Xiang

    CO3) and MoO3, respectively. Cs2CO3 was found to strongly electron dope black phosphorus. The electron mobility of black phosphorus was significantly enhanced to ˜27 cm2V-1s-1 after 10 nm Cs2CO3 modification, indicating a greatly improved electron transport behavior. In contrast, MoO3 decoration demonstrated a giant hole doping effect. In situ PES characterization confirms the interfacial charge transfer between black phosphorus and doping layers. This doping can also modulate the Schottky junctions formed between metal contacts and black phosphorus flakes, and hence to enhance the responsivity of black phosphorus based photodetectors. These findings coupled with the tunable nature of the surface transfer doping scheme ensure black phosphorus as a promising candidate for further complementary logic electronics. Following the same surface transfer doping technique, I will demonstrate a remarkable performance enhancement of graphene/Si Schottky junction based self-powered photodetectors via surface modification with MoO3 thin film. It was found that the photocurrent responsivity of MoO3 doped graphene/Si photodetectors was highly increased under a wide spectrum of illuminated light from ultraviolet to near infrared. The current on-off ratio reached up to ˜104 under illumination of 500 nm light with intensity of ˜62 muWcm-2. More importantly, the external quantum efficiency of graphene/Si devices was significantly enhanced up to ˜80% by almost four times in the visible light region after MoO3 functionalization. The largely improved photodetecting performance originates from the increased Schottky barrier height at the graphene/Si interface as well as the reduced series resistance after MoO3 modification, which was further corroborated by the in situ PES and electrical transport characterizations. These observations promise a simple method to effectively modify the graphene/Si Schottky junction based self-powered photodetectors and thus significantly enhance their

  2. Point Defects in Two-Dimensional Layered Semiconductors: Physics and Its Applications

    NASA Astrophysics Data System (ADS)

    Suh, Joonki

    thermoelectric materials are thoroughly investigated. Point defects can potentially beat the undesired coupling, often term "thermoelectric Bermuda triangle", among electrical conductivity, thermal conductivity and thermopower. The maximum thermoelectric performance is demonstrated with an intermediate density of defects when they beneficially and multi-functionally act as electron donors, as well as strongly energy-dependent electron and phonon scatterers. Therefore, this is a good example of how fundamental defect physics can be applied for practical devices toward renewable energy technology. Another interesting field of layered nanomaterials is on transition-metal dichalcogenides (TMDs), sensational candidates for 2D semiconductor physics and applications. At the reduced dimensionality of 2D where a far stronger correlation between point defects and charge carriers is expected, it is studied how chalcogen vacancies alter optical properties of monolayer TMDs. A new, sub-bandgap broad emission lines as well as increase in the overall photoluminescence intensity at low temperatures are reported as a result of high quantum efficiency of excitons, i.e., bound electron-hole pairs, localized at defect sites. On electrical transport, both n- and p-type materials are needed to form junctions and support bipolar carrier conduction while typically only one type of doping is stable for a particular TMD. For example, MoS2 is natively n-type, thus the lack of p-type doping hampers the development of charge-splitting p-n junctions of MoS2. To address this issue, we demonstrate stable p-type conduction in MoS2 by substitutional Nb doping up to the degenerate level. Proof-of-concept, van der Waals p-n homo-junctions based on vertically stacked MoS2 layers are also fabricated which enable gate-tuneable current rectification. Various electronic devices fabricated are stable in ambient air even without additional treatment such as capping layer protection, thanks to the substitutionality nature

  3. Four-Quadrant Analog Multipliers Using G4-FETs

    NASA Technical Reports Server (NTRS)

    Mojarradi, Mohammad; Blalock, Benjamin; Christoloveanu, Sorin; Chen, Suheng; Akarvardar, Kerem

    2006-01-01

    Theoretical analysis and some experiments have shown that the silicon-on-insulator (SOI) 4-gate transistors known as G4-FETs can be used as building blocks of four-quadrant analog voltage multiplier circuits. Whereas a typical prior analog voltage multiplier contains between six and 10 transistors, it is possible to construct a superior voltage multiplier using only four G4-FETs. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET). It can be regarded as a single transistor having four gates, which are parts of a structure that affords high functionality by enabling the utilization of independently biased multiple inputs. The structure of a G4-FET of the type of interest here (see Figure 1) is that of a partially-depleted SOI MOSFET with two independent body contacts, one on each side of the channel. The drain current comprises of majority charge carriers flowing from one body contact to the other that is, what would otherwise be the side body contacts of the SOI MOSFET are used here as the end contacts [the drain (D) and the source (S)] of the G4-FET. What would otherwise be the source and drain of the SOI MOSFET serve, in the G4-FET, as two junction-based extra gates (JG1 and JG2), which are used to squeeze the channel via reverse-biased junctions as in a JFET. The G4-FET also includes a polysilicon top gate (G1), which plays the same role as does the gate in an accumulation-mode MOSFET. The substrate emulates a fourth MOS gate (G2). By making proper choices of G4-FET device parameters in conjunction with bias voltages and currents, one can design a circuit in which two input gate voltages (Vin1,Vin2) control the conduction characteristics of G4-FETs such that the output voltage (Vout) closely approximates a value proportional to the product of the input voltages. Figure 2 depicts two such analog multiplier circuits. In each circuit, there is the following: The input and output

  4. Electron Transport through Porphyrin Molecular Junctions

    NASA Astrophysics Data System (ADS)

    Zhou, Qi

    level broadening and shifting may significantly affect the electron transport through molecular junctions. The second factor studied, that is, the deprotection of the porphyrin end groups (acetylthio, -SCOCH3), was completed in-situ for the free base porphyrin through the reaction of the acetylthio with sulfuric acid at 35° Celsius for 3 hours. MALDI spectroscopy confirms that two additional deprotected porphyrin species are formed by deprotection, with protonated (MH+) molecular masses of 721 and 679, corresponding to a partially deprotected porphyrin (i.e. only one of the two end groups deprotected), and a fully deprotected porphyrin molecule. Along with the un-reacted acetyl protected porphyrin, a total of 3 porphyrin species are in the solution. This solution is used for self-assembly on a gold/mica surface. The thickness of the in-situ deprotected SAM is determined to be ˜1.7 nm, confirming a relatively upright molecular orientation (54.0°-63.5° between the substrate surface and the molecule), compared to a thickness of ˜1.5 nm for the protected SAM that has a more flat-lying molecular orientation (˜45.6° between the substrate surface and the molecule). From G-S measurements on SAMs prepared by in-situ deprotection, junctions with lower conductance steps at mid 10-5 G0 and junctions with higher conductance steps around 10-4 G 0 are observed. Supported by computational modeling from our collaborating research group, we associate the lower conductance steps to junctions based on the protected form of thiols at the tip-molecule interface, and the higher conductance steps to the deprotected form of the thiol contacts. We suggest that the reduced conductance in the protected porphyrin originates from the presence of the acetyl end groups (-COCH3), rather than from the elongation of the sulfur-gold (S-Au) bonds at the tip-molecule interface. By studying these two factors, I expect this work to provide insights into electron transport through molecules or metal

  5. CONFERENCE SUMMARY: Summary and comment on superconducting analogue electronics research, including materials and fabrication, as presented at ISEC 07

    NASA Astrophysics Data System (ADS)

    Foley, C. P.

    2007-11-01

    -micron Josephson junctions using laser etching (Büttner et al) and the development of passivation layers using amorphous YBCO and SiO2 (Seidel et al) were also presented. Characterization methods using Raman and photo-emission spectroscopy (Kikunaga et al) emerged as fresh approaches. Josephson junction (JJ) research covered the areas of critical current fluctuations where results on Tl-based junctions suggested a 40 times lower δI/Ic, and LTS junctions for voltage standards using a Nb-Si barrier for improved SNS junctions (Kieler et al). Development of MTS junctions based on MgB2 are yet to be realized with the interface barrier appearing to be the limiting factor. HTS Josephson junctions were reviewed by asking the question: `Are all HTS JJs the same?' with a clear `no' as the answer. Research on intrinsic stacked junctions, sub-micron junctions, the manipulation of electronic band structure to increase energy gap and mid-gap states was also presented. Developments in packaging and cooling were not as dominant at this conference as in previous years. However, there was research reported on the importance of non-magnetic structures in packaging, the design of magnetic shielding improvement by using finite element analysis to optimize design (Tanaka et al) and the use of cryocoolers (Vernik et al). SQUID research reported some breakthrough developments with new ideas presented on nano-SQUIDs with the possible detection of a ferritin spin-flip, a successful airborne trial using a rotating gradiometer and the development of a new 4 cm long baseline planar gradiometer, achieving a sensitivity of 35 fT cm-1 Hz-½. Applications in non-destructive evaluation (NDE) covered the use of SQUIDs in the detection of stainless steel foreign objects in food, defects in wire and circuit boards and surface imaging with most developments focusing on potential customer requirements. Biomagnetic applications have continued to be embraced in the use of SQUIDs in MRI (Zotev et al), NMR, MEG