Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires

NASA Astrophysics Data System (ADS)

Luo, Jun-Wei; Li, Shu-Shen; Zunger, Alex

2017-09-01

The electric field manipulation of the Rashba spin-orbit coupling effects provides a route to electrically control spins, constituting the foundation of the field of semiconductor spintronics. In general, the strength of the Rashba effects depends linearly on the applied electric field and is significant only for heavy-atom materials with large intrinsic spin-orbit interaction under high electric fields. Here, we illustrate in 1D semiconductor nanowires an anomalous field dependence of the hole (but not electron) Rashba effect (HRE). (i) At low fields, the strength of the HRE exhibits a steep increase with the field so that even low fields can be used for device switching. (ii) At higher fields, the HRE undergoes a rapid transition to saturation with a giant strength even for light-atom materials such as Si (exceeding 100 meV Å). (iii) The nanowire-size dependence of the saturation HRE is rather weak for light-atom Si, so size fluctuations would have a limited effect; this is a key requirement for scalability of Rashba-field-based spintronic devices. These three features offer Si nanowires as a promising platform for the realization of scalable complementary metal-oxide-semiconductor compatible spintronic devices.

Feasibility Study of Extended-Gate-Type Silicon Nanowire Field-Effect Transistors for Neural Recording

PubMed Central

Kang, Hongki; Kim, Jee-Yeon; Choi, Yang-Kyu; Nam, Yoonkey

2017-01-01

In this research, a high performance silicon nanowire field-effect transistor (transconductance as high as 34 µS and sensitivity as 84 nS/mV) is extensively studied and directly compared with planar passive microelectrode arrays for neural recording application. Electrical and electrochemical characteristics are carefully characterized in a very well-controlled manner. We especially focused on the signal amplification capability and intrinsic noise of the transistors. A neural recording system using both silicon nanowire field-effect transistor-based active-type microelectrode array and platinum black microelectrode-based passive-type microelectrode array are implemented and compared. An artificial neural spike signal is supplied as input to both arrays through a buffer solution and recorded simultaneously. Recorded signal intensity by the silicon nanowire transistor was precisely determined by an electrical characteristic of the transistor, transconductance. Signal-to-noise ratio was found to be strongly dependent upon the intrinsic 1/f noise of the silicon nanowire transistor. We found how signal strength is determined and how intrinsic noise of the transistor determines signal-to-noise ratio of the recorded neural signals. This study provides in-depth understanding of the overall neural recording mechanism using silicon nanowire transistors and solid design guideline for further improvement and development. PMID:28350370

Feasibility Study of Extended-Gate-Type Silicon Nanowire Field-Effect Transistors for Neural Recording.

PubMed

Kang, Hongki; Kim, Jee-Yeon; Choi, Yang-Kyu; Nam, Yoonkey

2017-03-28

In this research, a high performance silicon nanowire field-effect transistor (transconductance as high as 34 µS and sensitivity as 84 nS/mV) is extensively studied and directly compared with planar passive microelectrode arrays for neural recording application. Electrical and electrochemical characteristics are carefully characterized in a very well-controlled manner. We especially focused on the signal amplification capability and intrinsic noise of the transistors. A neural recording system using both silicon nanowire field-effect transistor-based active-type microelectrode array and platinum black microelectrode-based passive-type microelectrode array are implemented and compared. An artificial neural spike signal is supplied as input to both arrays through a buffer solution and recorded simultaneously. Recorded signal intensity by the silicon nanowire transistor was precisely determined by an electrical characteristic of the transistor, transconductance. Signal-to-noise ratio was found to be strongly dependent upon the intrinsic 1/f noise of the silicon nanowire transistor. We found how signal strength is determined and how intrinsic noise of the transistor determines signal-to-noise ratio of the recorded neural signals. This study provides in-depth understanding of the overall neural recording mechanism using silicon nanowire transistors and solid design guideline for further improvement and development.

Nanowire size dependence on sensitivity of silicon nanowire field-effect transistor-based pH sensor

NASA Astrophysics Data System (ADS)

Lee, Ryoongbin; Kwon, Dae Woong; Kim, Sihyun; Kim, Sangwan; Mo, Hyun-Sun; Kim, Dae Hwan; Park, Byung-Gook

2017-12-01

In this study, we investigated the effects of nanowire size on the current sensitivity of silicon nanowire (SiNW) ion-sensitive field-effect transistors (ISFETs). The changes in on-current (I on) and resistance according to pH were measured in fabricated SiNW ISFETs of various lengths and widths. As a result, it was revealed that the sensitivity expressed as relative I on change improves as the width decreases. Through technology computer-aided design (TCAD) simulation analysis, the width dependence on the relative I on change can be explained by the observation that the target molecules located at the edge region along the channel width have a stronger effect on the sensitivity as the SiNW width is reduced. Additionally, the length dependence on the sensitivity can be understood in terms of the resistance ratio of the fixed parasitic resistance, including source/drain resistance, to the varying channel resistance as a function of channel length.

Excellent field emission properties of vertically oriented CuO nanowire films

NASA Astrophysics Data System (ADS)

Feng, Long; Yan, Hui; Li, Heng; Zhang, Rukang; Li, Zhe; Chi, Rui; Yang, Shuaiyu; Ma, Yaya; Fu, Bin; Liu, Jiwen

2018-04-01

Oriented CuO nanowire films were synthesized on a large scale using simple method of direct heating copper grids in air. The field emission properties of the sample can be enhanced by improving the aspect ratio of the nanowires just through a facile method of controlling the synthesis conditions. Although the density of the nanowires is large enough, the screen effect is not an important factor in this field emission process because few nanowires sticking out above the rest. Benefiting from the unique geometrical and structural features, the CuO nanowire samples show excellent field emission (FE) properties. The FE measurements of CuO nanowire films illustrate that the sample synthesized at 500 °C for 8 h has a comparatively low turn-on field of 0.68 V/μm, a low threshold field of 1.1 V/μm, and a large field enhancement factor β of 16782 (a record high value for CuO nanostructures, to the best of our knowledge), indicating that the samples are promising candidates for field emission applications.

Rapid Transition of the Hole Rashba Effect from Strong Field Dependence to Saturation in Semiconductor Nanowires.

PubMed

Luo, Jun-Wei; Li, Shu-Shen; Zunger, Alex

2017-09-22

The electric field manipulation of the Rashba spin-orbit coupling effects provides a route to electrically control spins, constituting the foundation of the field of semiconductor spintronics. In general, the strength of the Rashba effects depends linearly on the applied electric field and is significant only for heavy-atom materials with large intrinsic spin-orbit interaction under high electric fields. Here, we illustrate in 1D semiconductor nanowires an anomalous field dependence of the hole (but not electron) Rashba effect (HRE). (i) At low fields, the strength of the HRE exhibits a steep increase with the field so that even low fields can be used for device switching. (ii) At higher fields, the HRE undergoes a rapid transition to saturation with a giant strength even for light-atom materials such as Si (exceeding 100 meV Å). (iii) The nanowire-size dependence of the saturation HRE is rather weak for light-atom Si, so size fluctuations would have a limited effect; this is a key requirement for scalability of Rashba-field-based spintronic devices. These three features offer Si nanowires as a promising platform for the realization of scalable complementary metal-oxide-semiconductor compatible spintronic devices.

Local sensor based on nanowire field effect transistor from inhomogeneously doped silicon on insulator

NASA Astrophysics Data System (ADS)

Presnov, Denis E.; Bozhev, Ivan V.; Miakonkikh, Andrew V.; Simakin, Sergey G.; Trifonov, Artem S.; Krupenin, Vladimir A.

2018-02-01

We present the original method for fabricating a sensitive field/charge sensor based on field effect transistor (FET) with a nanowire channel that uses CMOS-compatible processes only. A FET with a kink-like silicon nanowire channel was fabricated from the inhomogeneously doped silicon on insulator wafer very close (˜100 nm) to the extremely sharp corner of a silicon chip forming local probe. The single e-beam lithographic process with a shadow deposition technique, followed by separate two reactive ion etching processes, was used to define the narrow semiconductor nanowire channel. The sensors charge sensitivity was evaluated to be in the range of 0.1-0.2 e /√{Hz } from the analysis of their transport and noise characteristics. The proposed method provides a good opportunity for the relatively simple manufacture of a local field sensor for measuring the electrical field distribution, potential profiles, and charge dynamics for a wide range of mesoscopic objects. Diagnostic systems and devices based on such sensors can be used in various fields of physics, chemistry, material science, biology, electronics, medicine, etc.

Nanoparticle-density-dependent field emission of surface-decorated SiC nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Qizheng; School of Materials and Chemical Engineering, Ningbo University of Technology, Ningbo City 315016; State Key Lab of New Fine Ceramics and Fine Processing, Tsinghua University, Beijing City 100084

2016-08-22

Increasing the electron emission site density of nanostructured emitters with limited field screening effects is one of the key issues for improving the field emission (FE) properties. In this work, we reported the Au-nanoparticles-density-dependent field emission behaviors of surface-decorated SiC nanowires. The Au nanoparticles (AuNPs) decorated around the surface of the SiC nanowires were achieved via an ion sputtering technique, by which the densities of the isolated AuNPs could be adjusted by controlling the fixed sputtering times. The measured FE characteristics demonstrated that the turn-on fields of the SiC nanowires were tuned to be of 2.06, 1.14, and 3.35 V/μm withmore » the increase of the decorated AuNPs densities, suggesting that a suitable decorated AuNPs density could render the SiC nanowires with totally excellent FE performances by increasing the emission sites and limiting the field screening effects.« less

The ITO-capped WO3 nanowires biosensor based on field-effect transistor in label-free protein sensing

NASA Astrophysics Data System (ADS)

Shariati, Mohsen

2017-05-01

The fabrication of ITO-capped WO3 nanowires associated with their bio-sensing properties in field-effect transistor diagnostics basis as a biosensor has been reported. The bio-sensing property for manipulated nanowires elucidated that the grown nanostructures were very sensitive to protein. The ITO-capped WO3 nanowires biosensor showed an intensive bio-sensing activity against reliable protein. Polylysine strongly charged bio-molecule was applied as model system to demonstrate the implementation of materialized biosensor. The employed sensing mechanism was `label-free' and depended on bio-molecule's intrinsic charge. For nanowires synthesis, the vapor-liquid-solid mechanism was used. Nanowires were beyond a few hundred nanometers in lengths and around 15-20 nm in diameter, while the globe cap's size on the nanowires was around 15-25 nm. The indium tin oxide (ITO) played as catalyst in nanofabrication for WO3 nanowires growth and had outstanding role in bio-sensing especially for bio-molecule adherence. In applied electric field presence, the fabricated device showed the great potential to enhance medical diagnostics.

Nanocrystal-mediated charge screening effects in nanowire field-effect transistors

NASA Astrophysics Data System (ADS)

Yoon, C. J.; Yeom, D. H.; Jeong, D. Y.; Lee, M. G.; Moon, B. M.; Kim, S. S.; Choi, C. Y.; Koo, S. M.

2009-03-01

ZnO nanowire field-effect transistors having an omega-shaped floating gate (OSFG) have been successfully fabricated by directly coating CdTe nanocrystals (˜6±2.5 nm) at room temperature, and compared to simultaneously prepared control devices without nanocrystals. Herein, we demonstrate that channel punchthrough may occur when the depletion from the OSFG takes place due to the trapped charges in the nanocrystals. Electrical measurements on the OSFG nanowire devices showed static-induction transistorlike behavior in the drain output IDS-VDS characteristics and a hysteresis window as large as ˜3.1 V in the gate transfer IDS-VGS characteristics. This behavior is ascribed to the presence of the CdTe nanocrystals, and is indicative of the trapping and emission of electrons in the nanocrystals. The numerical simulations clearly show qualitatively the same characteristics as the experimental data and confirm the effect, showing that the change in the potential distribution across the channel, induced by both the wrapping-around gate and the drain, affects the transport characteristics of the device. The cross-sectional energy band and potential profile of the OSFG channel corresponding to the "programed (noncharged)" and "erased (charged)" operations for the device are also discussed on the basis of the numerical capacitance-voltage simulations.

Using Ultrathin Parylene Films as an Organic Gate Insulator in Nanowire Field-Effect Transistors.

PubMed

Gluschke, J G; Seidl, J; Lyttleton, R W; Carrad, D J; Cochrane, J W; Lehmann, S; Samuelson, L; Micolich, A P

2018-06-27

We report the development of nanowire field-effect transistors featuring an ultrathin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high temperatures using atomic layer deposition. We discuss our custom-built parylene deposition system, which is designed for reliable and controlled deposition of <100 nm thick parylene films on III-V nanowires standing vertically on a growth substrate or horizontally on a device substrate. The former case gives conformally coated nanowires, which we used to produce functional Ω-gate and gate-all-around structures. These give subthreshold swings as low as 140 mV/dec and on/off ratios exceeding 10 3 at room temperature. For the gate-all-around structure, we developed a novel fabrication strategy that overcomes some of the limitations with previous lateral wrap-gate nanowire transistors. Finally, we show that parylene can be deposited over chemically treated nanowire surfaces, a feature generally not possible with oxides produced by atomic layer deposition due to the surface "self-cleaning" effect. Our results highlight the potential for parylene as an alternative ultrathin insulator in nanoscale electronic devices more broadly, with potential applications extending into nanobioelectronics due to parylene's well-established biocompatible properties.

Deformable Organic Nanowire Field-Effect Transistors.

PubMed

Lee, Yeongjun; Oh, Jin Young; Kim, Taeho Roy; Gu, Xiaodan; Kim, Yeongin; Wang, Ging-Ji Nathan; Wu, Hung-Chin; Pfattner, Raphael; To, John W F; Katsumata, Toru; Son, Donghee; Kang, Jiheong; Matthews, James R; Niu, Weijun; He, Mingqian; Sinclair, Robert; Cui, Yi; Tok, Jeffery B-H; Lee, Tae-Woo; Bao, Zhenan

2018-02-01

Deformable electronic devices that are impervious to mechanical influence when mounted on surfaces of dynamically changing soft matters have great potential for next-generation implantable bioelectronic devices. Here, deformable field-effect transistors (FETs) composed of single organic nanowires (NWs) as the semiconductor are presented. The NWs are composed of fused thiophene diketopyrrolopyrrole based polymer semiconductor and high-molecular-weight polyethylene oxide as both the molecular binder and deformability enhancer. The obtained transistors show high field-effect mobility >8 cm 2 V -1 s -1 with poly(vinylidenefluoride-co-trifluoroethylene) polymer dielectric and can easily be deformed by applied strains (both 100% tensile and compressive strains). The electrical reliability and mechanical durability of the NWs can be significantly enhanced by forming serpentine-like structures of the NWs. Remarkably, the fully deformable NW FETs withstand 3D volume changes (>1700% and reverting back to original state) of a rubber balloon with constant current output, on the surface of which it is attached. The deformable transistors can robustly operate without noticeable degradation on a mechanically dynamic soft matter surface, e.g., a pulsating balloon (pulse rate: 40 min -1 (0.67 Hz) and 40% volume expansion) that mimics a beating heart, which underscores its potential for future biomedical applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Phosphorus-Rich Copper Phosphide Nanowires for Field-Effect Transistors and Lithium-Ion Batteries.

PubMed

Li, Guo-An; Wang, Chiu-Yen; Chang, Wei-Chung; Tuan, Hsing-Yu

2016-09-27

Phosphorus-rich transition metal phosphide CuP2 nanowires were synthesized with high quality and high yield (∼60%) via the supercritical fluid-liquid-solid (SFLS) growth at 410 °C and 10.2 MPa. The obtained CuP2 nanowires have a high aspect ratio and exhibit a single crystal structure of monoclinic CuP2 without any impurity phase. CuP2 nanowires have progressive improvement for semiconductors and energy storages compared with bulk CuP2. Being utilized for back-gate field effect transistor (FET) measurement, CuP2 nanowires possess a p-type behavior intrinsically with an on/off ratio larger than 10(4) and its single nanowire electrical transport property exhibits a hole mobility of 147 cm(2) V(-1) s(-1), representing the example of a CuP2 transistor. In addition, CuP2 nanowires can serve as an appealing anode material for a lithium-ion battery electrode. The discharge capacity remained at 945 mA h g(-1) after 100 cycles, showing a good capacity retention of 88% based on the first discharge capacity. Even at a high rate of 6 C, the electrode still exhibited an outstanding result with a capacity of ∼600 mA h g(-1). Ex-situ transmission electron microscopy and CV tests demonstrate that the stability of capacity retention and remarkable rate capability of the CuP2 nanowires electrode are attributed to the role of the metal phosphide conversion-type lithium storage mechanism. Finally, CuP2 nanowire anodes and LiFePO4 cathodes were assembled into pouch-type lithium batteries offering a capacity over 60 mA h. The full cell shows high capacity and stable capacity retention and can be used as an energy supply to operate electronic devices such as mobile phones and mini 4WD cars.

Combining axial and radial nanowire heterostructures: radial Esaki diodes and tunnel field-effect transistors.

PubMed

Dey, Anil W; Svensson, Johannes; Ek, Martin; Lind, Erik; Thelander, Claes; Wernersson, Lars-Erik

2013-01-01

The ever-growing demand on high-performance electronics has generated transistors with very impressive figures of merit (Radosavljevic et al., IEEE Int. Devices Meeting 2009, 1-4 and Cho et al., IEEE Int. Devices Meeting 2011, 15.1.1-15.1.4). The continued scaling of the supply voltage of field-effect transistors, such as tunnel field-effect transistors (TFETs), requires the implementation of advanced transistor architectures including FinFETs and nanowire devices. Moreover, integration of novel materials with high electron mobilities, such as III-V semiconductors and graphene, are also being considered to further enhance the device properties (del Alamo, Nature 2011, 479, 317-323, and Liao et al., Nature 2010, 467, 305-308). In nanowire devices, boosting the drive current at a fixed supply voltage or maintaining a constant drive current at a reduced supply voltage may be achieved by increasing the cross-sectional area of a device, however at the cost of deteriorated electrostatics. A gate-all-around nanowire device architecture is the most favorable electrostatic configuration to suppress short channel effects; however, the arrangement of arrays of parallel vertical nanowires to address the drive current predicament will require additional chip area. The use of a core-shell nanowire with a radial heterojunction in a transistor architecture provides an attractive means to address the drive current issue without compromising neither chip area nor device electrostatics. In addition to design advantages of a radial transistor architecture, we in this work illustrate the benefit in terms of drive current per unit chip area and compare the experimental data for axial GaSb/InAs Esaki diodes and TFETs to their radial counterparts and normalize the electrical data to the largest cross-sectional area of the nanowire, i.e. the occupied chip area, assuming a vertical device geometry. Our data on lateral devices show that radial Esaki diodes deliver almost 7 times higher peak

Fabricating photoswitches and field-effect transistors from self-assembled tetra(2-isopropyl-5-methyphenoxy) copper phthalocyanines nanowires.

PubMed

Cheng, Chuanwei; Gao, Junshan; Xu, Guoyue; Zhang, Haiqian; Li, Yingying; Luo, Yan

2009-05-01

Tetra(2-isopropyl-5-methyphenoxy) copper phthalocyanine (CuPc) nanowires synthesized by a facile, low temperature self-assembled route, were incorporated into nano-devices: photoswitch and organic field-effect transistor. The devices were capable of switching on/off reversibly and fast by turning the 808 nm infrared light on/off. And the carrier mobility micro of CuPc nanowires incorporated in the devices was -0.02 cm2/V x s. The prelimenary results in this study show the potential application of metal phthalocyanine nanowires in low-cost fabrication of nano photo-electric devices.

Single ZnO nanowire-PZT optothermal field effect transistors.

PubMed

Hsieh, Chun-Yi; Lu, Meng-Lin; Chen, Ju-Ying; Chen, Yung-Ting; Chen, Yang-Fang; Shih, Wan Y; Shih, Wei-Heng

2012-09-07

A new type of pyroelectric field effect transistor based on a composite consisting of single zinc oxide nanowire and lead zirconate titanate (ZnO NW-PZT) has been developed. Under infrared (IR) laser illumination, the transconductance of the ZnO NW can be modulated by optothermal gating. The drain current can be increased or decreased by IR illumination depending on the polarization orientation of the Pb(Zr(0.3)Ti(0.7))O(3) (PZT) substrate. Furthermore, by combining the photocurrent behavior in the UV range and the optothermal gating effect in the IR range, the wide spectrum of response of current by light offers a variety of opportunities for nanoscale optoelectronic devices.

Spatial buckling analysis of current-carrying nanowires in the presence of a longitudinal magnetic field accounting for both surface and nonlocal effects

NASA Astrophysics Data System (ADS)

Foroutan, Shahin; Haghshenas, Amin; Hashemian, Mohammad; Eftekhari, S. Ali; Toghraie, Davood

2018-03-01

In this paper, three-dimensional buckling behavior of nanowires was investigated based on Eringen's Nonlocal Elasticity Theory. The electric current-carrying nanowires were affected by a longitudinal magnetic field based upon the Lorentz force. The nanowires (NWs) were modeled based on Timoshenko beam theory and the Gurtin-Murdoch's surface elasticity theory. Generalized Differential Quadrature (GDQ) method was used to solve the governing equations of the NWs. Two sets of boundary conditions namely simple-simple and clamped-clamped were applied and the obtained results were discussed. Results demonstrated the effect of electric current, magnetic field, small-scale parameter, slenderness ratio, and nanowires diameter on the critical compressive buckling load of nanowires. As a key result, increasing the small-scale parameter decreased the critical load. By the same token, increasing the electric current, magnetic field, and slenderness ratio resulted in a decrease in the critical load. As the slenderness ratio increased, the effect of nonlocal theory decreased. In contrast, by expanding the NWs diameter, the nonlocal effect increased. Moreover, in the present article, the critical values of the magnetic field of strength and slenderness ratio were revealed, and the roles of the magnetic field, slenderness ratio, and NWs diameter on higher buckling loads were discussed.

Spontaneous polarization induced electric field in zinc oxide nanowires and nanostars

DOE Office of Scientific and Technical Information (OSTI.GOV)

Farid, S., E-mail: sfarid3@uic.edu; Choi, M.; Datta, D.

We report on the detection mechanism of spontaneous polarization using electrostatic force microscopy in zinc oxide nanowires and nanostars grown by vapor-liquid-solid technique. Optical and structural properties are investigated in detail to understand the complex ZnO nanostructures comprehensively. Calculations are carried out to estimate the electric field from the change in interleave amplitude induced by the electrostatic force due to the spontaneous polarization effects. Attraction of the probe between the tip and the sample varies for different structures with a stronger attraction for nanostars as compared to nanowires. Strength of electric field is dependent on the orientation of nanowires andmore » nanostars c-axis with measured magnitude of electric field to be ∼10{sup 7 }V/m and 10{sup 8 }V/m respectively. This technique presents a unique detection mechanism of built-in spontaneous polarization and electric field from polar ZnO nanowires with applications in voltage gated ion channels, nano-bio interfaces, optoelectronic and photonic devices.« less

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

2014-05-21

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

Self-assembly of metal nanowires induced by alternating current electric fields

NASA Astrophysics Data System (ADS)

García-Sánchez, Pablo; Arcenegui, Juan J.; Morgan, Hywel; Ramos, Antonio

2015-01-01

We describe the reversible assembly of an aqueous suspension of metal nanowires into two different 2-dimensional stable configurations. The assembly is induced by an AC electric field of magnitude around 10 kV/m. It is known that single metal nanowires orientate parallel to the electric field for all values of applied frequency, according to two different mechanisms depending on the frequency. These different mechanisms also govern the mutual interaction between nanowires, which leads to directed-assembly into distinctive structures, the shape of which depends on the frequency of the applied field. We show that for frequencies higher than the typical frequency for charging the electrical double layer at the metal-electrolyte interface, dipole-dipole interaction leads to the formation of chains of nanowires. For lower frequencies, the nanowires form wavy bands perpendicular to the electric field direction. This behavior appears to be driven by the electroosmotic flow induced on the metal surface of the nanowires. Remarkably, no similar structures have been reported in previous studies of nanowires.

Statistical variability study of random dopant fluctuation on gate-all-around inversion-mode silicon nanowire field-effect transistors

NASA Astrophysics Data System (ADS)

Yoon, Jun-Sik; Rim, Taiuk; Kim, Jungsik; Kim, Kihyun; Baek, Chang-Ki; Jeong, Yoon-Ha

2015-03-01

Random dopant fluctuation effects of gate-all-around inversion-mode silicon nanowire field-effect transistors (FETs) with different diameters and extension lengths are investigated. The nanowire FETs with smaller diameter and longer extension length reduce average values and variations of subthreshold swing and drain-induced barrier lowering, thus improving short channel immunity. Relative variations of the drain currents increase as the diameter decreases because of decreased current drivability from narrower channel cross-sections. Absolute variations of the drain currents decrease critically as the extension length increases due to decreasing the number of arsenic dopants penetrating into the channel region. To understand variability origins of the drain currents, variations of source/drain series resistance and low-field mobility are investigated. All these two parameters affect the variations of the drain currents concurrently. The nanowire FETs having extension lengths sufficient to prevent dopant penetration into the channel regions and maintaining relatively large cross-sections are suggested to achieve suitable short channel immunity and small variations of the drain currents.

Recovery Based Nanowire Field-Effect Transistor Detection of Pathogenic Avian Influenza DNA

NASA Astrophysics Data System (ADS)

Lin, Chih-Heng; Chu, Chia-Jung; Teng, Kang-Ning; Su, Yi-Jr; Chen, Chii-Dong; Tsai, Li-Chu; Yang, Yuh-Shyong

2012-02-01

Fast and accurate diagnosis is critical in infectious disease surveillance and management. We proposed a DNA recovery system that can easily be adapted to DNA chip or DNA biosensor for fast identification and confirmation of target DNA. This method was based on the re-hybridization of DNA target with a recovery DNA to free the DNA probe. Functionalized silicon nanowire field-effect transistor (SiNW FET) was demonstrated to monitor such specific DNA-DNA interaction using high pathogenic strain virus hemagglutinin 1 (H1) DNA of avian influenza (AI) as target. Specific electric changes were observed in real-time for AI virus DNA sensing and device recovery when nanowire surface of SiNW FET was modified with complementary captured DNA probe. The recovery based SiNW FET biosensor can be further developed for fast identification and further confirmation of a variety of influenza virus strains and other infectious diseases.

Ferromagnetic nanowires: Field-induced self-assembly, magnetotransport and biological applications

NASA Astrophysics Data System (ADS)

Tanase, Monica

In this dissertation, a series of experiments on magnetic nanowires are described. Magnetic nanowires suspended in fluid solutions can be assembled and ordered by taking advantage of their large shape anisotropy. Magnetic manipulation and assembly techniques were developed, using electrodeposited Ni nanowires. Preorienting nanowires in a small magnetic field induced their self-assembly in continuous chains. A new technique of magnetic trapping allowed capture of single nanowires from fluid suspension on lithographically fabricated micromagnets. As described herein, the presence of an external magnetic field plays a fundamental role in all fluid assembly methods used. The dynamics of both chaining and trapping processes is described quantitatively in terms of the interplay of magnetic forces and fluid drag at low Reynolds number. Lithographic methods for addressing single nanowires for transport characterization were developed. Magnetotransport measurements were performed on individual straight and bent PtNiPt nanowires. The Pt end segments provided an oxide-free interface to the magnetic central segment. In straight nanowires, domain reversal was observed to occur via curling mode initiated in a small nucleation volume. Magnetotransport in bent nanowires allowed the investigation of a domain wall trapped at the bend. Magnetic trapping of nanowires on pre-fabricated electrodes was adapted as a successful alternative contacting technique to lithography. The self-assembly and manipulation techniques were adapted for manipulation of cells as nanowires were found to bind to cells through nonspecific adhesion mechanisms. Ni nanowires were found to outperform superparamagnetic beads in magnetic cell separations. Additionally, the large remnant magnetization of the nanowires allowed for low-field manipulation techniques. Self-assembled chains of cells were formed and single cells were localized on substrates patterned with micromagnets. A fluid flow method was developed to

Repurposing compact discs as master molds to fabricate high-performance organic nanowire field-effect transistors

NASA Astrophysics Data System (ADS)

Kim, Kyunghun; Cho, Jinhwi; Jhon, Heesauk; Jeon, Jongwook; Kang, Myounggon; Eon Park, Chan; Lee, Jihoon; An, Tae Kyu

2017-05-01

Organic field-effect transistors (OFETs) have been developed over the past few decades due to their potential applications in future electronics such as wearable and foldable electronics. As the electrical performance of OFETs has improved, patterning organic semiconducting crystals has become a key issue for their commercialization. However, conventional soft lithographic techniques have required the use of expensive processes to fabricate high-resolution master molds. In this study, we demonstrated a cost-effective method to prepare nanopatterned master molds for the fabrication of high-performance nanowire OFETs. We repurposed commercially available compact discs (CDs) as master molds because they already have linear nanopatterns on their surface. Flexible nanopatterned templates were replicated from the CDs using UV-imprint lithography. Subsequently, 6,13-bis-(triisopropylsilylethynyl) pentacene nanowires (NWs) were grown from the templates using a capillary force-assisted lithographic technique. The NW-based OFETs showed a high average field-effect mobility of 2.04 cm2 V-1 s-1. This result was attributed to the high crystallinity of the NWs and to their crystal orientation favorable for charge transport.

Microwave fields driven domain wall motions in antiferromagnetic nanowires

NASA Astrophysics Data System (ADS)

Chen, Z. Y.; Yan, Z. R.; Zhang, Y. L.; Qin, M. H.; Fan, Z.; Lu, X. B.; Gao, X. S.; Liu, J.-M.

2018-06-01

In this work, we study the microwave field driven domain wall (DW) motion in an antiferromagnetic nanowire, using the numerical calculations based on a classical Heisenberg spin model with the biaxial magnetic anisotropy. We show that a proper combination of a static magnetic field plus an oscillating field perpendicular to the nanowire axis is sufficient to drive the DW propagation along the nanowire. More importantly, the drift velocity at the resonance frequency is comparable to that induced by temperature gradients, suggesting that microwave field can be a very promising tool to control DW motions in antiferromagnetic nanostructures. The dependences of resonance frequency and drift velocity on the static and oscillating fields, the axial anisotropy, and the damping constant are discussed in details. Furthermore, the optimal orientations of the field are also numerically determined and explained. This work provides useful information for the spin dynamics in antiferromagnetic nanostructures for spintronics applications.

Interactions and reversal-field memory in complex magnetic nanowire arrays

NASA Astrophysics Data System (ADS)

Rotaru, Aurelian; Lim, Jin-Hee; Lenormand, Denny; Diaconu, Andrei; Wiley, John. B.; Postolache, Petronel; Stancu, Alexandru; Spinu, Leonard

2011-10-01

Interactions and magnetization reversal of Ni nanowire arrays have been investigated by the first-order reversal curve (FORC) method. Several series of samples with controlled spatial distribution were considered including simple wires of different lengths and diameters (70 and 110 nm) and complex wires with a single modulated diameter along their length. Subtle features of magnetic interactions are revealed through a quantitative analysis of the local interaction field profile distributions obtained from the FORC method. In addition, the FORC analysis indicates that the nanowire systems with a mean diameter of 70 nm appear to be organized in symmetric clusters indicative of a reversal-field memory effect.

Sensing Responses Based on Transfer Characteristics of InAs Nanowire Field-Effect Transistors

PubMed Central

Savelyev, Igor; Blumin, Marina; Wang, Shiliang; Ruda, Harry E.

2017-01-01

Nanowire-based field-effect transistors (FETs) have demonstrated considerable promise for a new generation of chemical and biological sensors. Indium arsenide (InAs), by virtue of its high electron mobility and intrinsic surface accumulation layer of electrons, holds properties beneficial for creating high performance sensors that can be used in applications such as point-of-care testing for patients diagnosed with chronic diseases. Here, we propose devices based on a parallel configuration of InAs nanowires and investigate sensor responses from measurements of conductance over time and FET characteristics. The devices were tested in controlled concentrations of vapour containing acetic acid, 2-butanone and methanol. After adsorption of analyte molecules, trends in the transient current and transfer curves are correlated with the nature of the surface interaction. Specifically, we observed proportionality between acetic acid concentration and relative conductance change, off current and surface charge density extracted from subthreshold behaviour. We suggest the origin of the sensing response to acetic acid as a two-part, reversible acid-base and redox reaction between acetic acid, InAs and its native oxide that forms slow, donor-like states at the nanowire surface. We further describe a simple model that is able to distinguish the occurrence of physical versus chemical adsorption by comparing the values of the extracted surface charge density. These studies demonstrate that InAs nanowires can produce a multitude of sensor responses for the purpose of developing next generation, multi-dimensional sensor applications. PMID:28714903

Field electron extraction from surface modified Cd(OH)2 nanowires

NASA Astrophysics Data System (ADS)

Bagal, Vivekanand S.; Patil, Girish P.; Jadhav, Chandradip; Sharma, Malvika; Shivhare, Sugam; Chavan, Padmakar G.

2018-04-01

The Cd(OH)2 nanowires were grown on Silicon(Si) substrate by simple chemical bath deposition technique and gold(Au) nanoparticles were decorated on surface of the Cd(OH)2 nanowiresby sputtering method. Detail characterization such as morphological and structural analysis of Au/Cd(OH)2 nanowires has been carried out using Field Emission Scanning Electron Microscope and X-ray Diffraction. Low turn-on field of 0.75 V/μm was found forthe emission current density of 10 µA/cm2 and high currentdensity of 1.478mA/cm2 was drawn at an applied field of 1.6 V/μm from Au/Cd(OH)2 nanowires, observed low turn-on field was found superior to other metal nanoparticles decorated semiconducting nanostructures reported in the literature. Also the field emission current stability for the preset value of 10 µA over the period of 3 hr is found to be good. To the best of our knowledge, this is the first report on the synthesis and field emission studies Au/Cd(OH)2 nanowires.

Far field emission profile of pure wurtzite InP nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bulgarini, Gabriele, E-mail: g.bulgarini@tudelft.nl; Reimer, Michael E.; Zwiller, Val

2014-11-10

We report on the far field emission profile of pure wurtzite InP nanowires in comparison to InP nanowires with predominantly zincblende crystal structure. The emission profile is measured on individual nanowires using Fourier microscopy. The most intense photoluminescence of wurtzite nanowires is collected at small angles with respect to the nanowire growth axis. In contrast, zincblende nanowires present a minimum of the collected light intensity in the direction of the nanowire growth. Results are explained by the orientation of electric dipoles responsible for the photoluminescence, which is different from wurtzite to zincblende. Wurtzite nanowires have dipoles oriented perpendicular to themore » nanowire growth direction, whereas zincblende nanowires have dipoles oriented along the nanowire axis. This interpretation is confirmed by both numerical simulations and polarization dependent photoluminescence spectroscopy. Knowledge of the dipole orientation in nanostructures is crucial for developing a wide range of photonic devices such as light-emitting diodes, photodetectors, and solar cells.« less

Electron beam assisted field evaporation of insulating nanowires/tubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Blanchard, N. P., E-mail: nicholas.blanchard@univ-lyon1.fr; Niguès, A.; Choueib, M.

2015-05-11

We demonstrate field evaporation of insulating materials, specifically BN nanotubes and undoped Si nanowires, assisted by a convergent electron beam. Electron irradiation leads to positive charging at the nano-object's apex and to an important increase of the local electric field thus inducing field evaporation. Experiments performed both in a transmission electron microscope and in a scanning electron microscope are presented. This technique permits the selective evaporation of individual nanowires in complex materials. Electron assisted field evaporation could be an interesting alternative or complementary to laser induced field desorption used in atom probe tomography of insulating materials.

Investigation of the temperature dependent field emission from individual ZnO nanowires for evidence of field-induced hot electrons emission.

PubMed

Chen, Yicong; Zhang, Zhipeng; Li, Zhi-Bing; She, Juncong; Deng, Shaozhi; Xu, Ning-Sheng; Chen, Jun

2018-06-27

ZnO nanowires as field emitters have important applications in flat panel display and X-ray source. Understanding the intrinsic field emission mechanism is crucial for further improving the performance of ZnO nanowire field emitters. In this article, the temperature dependent field emission from individual ZnO nanowires was investigated by an in-situ measurement in ultra-high vacuum. The divergent temperature-dependent Fowler-Nordheim plots is found in the low field region. A field-induced hot electrons emission model that takes into account penetration length is proposed to explain the results. The carrier density and temperature dependence of the field-induced hot electrons emission current are derived theoretically. The obtained results are consistent with the experimental results, which could be attributed to the variation of effective electron temperature. All of these are important for a better understanding on the field emission process of semiconductor nanostructures. © 2018 IOP Publishing Ltd.

Monolithic Integration of a Silicon Nanowire Field-Effect Transistors Array on a Complementary Metal-Oxide Semiconductor Chip for Biochemical Sensor Applications

PubMed Central

Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

2017-01-01

We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I−V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs. PMID:26348408

Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications.

PubMed

Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

2015-10-06

We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs.

Field emission and photoluminescence characteristics of ZnS nanowires via vapor phase growth

NASA Astrophysics Data System (ADS)

Chang, Yongqin; Wang, Mingwei; Chen, Xihong; Ni, Saili; Qiang, Weijing

2007-05-01

Large-area ZnS nanowires were synthesized through a vapor phase deposition method. X-ray diffraction and electron microscopy results show that the products are composed of single crystalline ZnS nanowires with a cubic structure. The nanowires have sharp tips and are distributed uniformly on silicon substrates. The diameter of the bases is in the range of 320-530 nm and that of the tips is around 20-30 nm. The strong ultraviolet emission in the photoluminescence spectra also demonstrates that the ZnS nanowires are of high crystalline perfection. Field emission measurements reveal that the ZnS nanowires have a fairly low threshold field, which may be ascribed to their very sharp tips, rough surfaces and high crystal quality. The perfect field emission ability of the ZnS nanowires makes them a promising candidate for the fabrication of flexible cold cathodes.

Spatiotemporal Imaging of the Acoustic Field Emitted by a Single Copper Nanowire

NASA Astrophysics Data System (ADS)

Jean, Cyril; Belliard, Laurent; Cornelius, Thomas W.; Thomas, Olivier; Pennec, Yan; Cassinelli, Marco; Toimil-Molares, Maria Eugenia; Perrin, Bernard

2016-10-01

The monochromatic and geometrically anisotropic acoustic field generated by 400 nm and 120 nm diameter copper nanowires simply dropped on a 10 $\\mu$m silicon membrane is investigated in transmission using three-dimensional time-resolved femtosecond pump-probe experiments. Two pump-probe time-resolved experiments are carried out at the same time on both side of the silicon substrate. In reflection, the first radial breathing mode of the nanowire is excited and detected. In transmission, the longitudinal and shear waves are observed. The longitudinal signal is followed by a monochromatic component associated with the relaxation of the nanowire's first radial breathing mode. Finite Difference Time Domain (FDTD) simulations are performed and accurately reproduce the diffracted field. A shape anisotropy resulting from the large aspect ratio of the nanowire is detected in the acoustic field. The orientation of the underlying nanowires is thus acoustically deduced.

Complex Electric-Field Induced Phenomena in Ferroelectric/Antiferroelectric Nanowires

NASA Astrophysics Data System (ADS)

Herchig, Ryan Christopher

Perovskite ferroelectrics and antiferroelectrics have attracted a lot of attention owing to their potential for device applications including THz sensors, solid state cooling, ultra high density computer memory, and electromechanical actuators to name a few. The discovery of ferroelectricity at the nanoscale provides not only new and exciting possibilities for device miniaturization, but also a way to study the fundamental physics of nanoscale phenomena in these materials. Ferroelectric nanowires show a rich variety of physical characteristics which are advantageous to the design of nanoscale ferroelectric devices such as exotic dipole patterns, a strong dependence of the polarization and phonon frequencies on the electrical and mechanical boundary conditions, as well as a dependence of the transition temperatures on the diameter of the nanowire. Antiferroelectricity also exists at the nanoscale and, due to the proximity in energy of the ferroelectric and antiferroelectric phases, a phase transition from the ferroelectric to the antiferroelectric phase can be facilitated through the application of the appropriate mechanical and electrical boundary conditions. While much progress has been made over the past several decades to understand the nature of ferroelectricity/antiferroelectricity in nanowires, many questions remain unanswered. In particular, little is known about how the truncated dimensions affect the soft mode frequency dynamics or how various electrical and mechanical boundary conditions might change the nature of the phase transitions in these ferroelectric nanowires. Could nanowires offer a distinct advantage for solid state cooling applications? Few studies have been done to elucidate the fundamental physics of antiferroelectric nanowires. How the polarization in ferroelectric nanowires responds to a THz electric field remains relatively underexplored as well. In this work, the aim is to to develop and use computational tools that allow first

Silicon Nanowire Field Effect Transistor Sensors with Minimal Sensor to Sensor Variations and Enhanced Sensing Characteristics.

PubMed

Zafar, Sufi; D'Emic, Christopher; Jagtiani, Ashish; Kratschmer, Ernst; Miao, Xin; Zhu, Yu; Mo, Renee; Sosa, Norma; Hamann, Hendrik F; Shahidi, Ghavam; Riel, Heike

2018-06-22

Silicon nanowire field effect transistor (FET) sensors have demonstrated their ability for rapid and label free detection of proteins, nucleotide sequences, and viruses at ultralow concentrations with the potential to be a transformative diagnostic technology. Their nanoscale size gives them their unique ultralow detection ability but also makes their fabrication challenging with large sensor to sensor variations, thus limiting their commercial applications. In this work, a combined approach of nanofabrication, device simulation, materials and electrical characterization is applied towards identifying and improving fabrication steps that induce sensor to sensor variations. An enhanced complementary metal-oxide-semiconductor (CMOS) compatible process for fabricating silicon nanowire FET sensors is demonstrated. Nanowire (30 nm width) FETs with aqueous solution as gates are shown to have the Nernst limit sub-threshold swing SS = 60 mV/decade with ~1.7% variations, whereas literature values for SS are ≥ 80 mV/decade with larger (>10 times) variations. Also, their threshold voltage variations are significantly (~3 times) reduced, compared to literature values. Furthermore, these improved FETs have significantly reduced drain current hysteresis (~0.6 mV) and enhanced on-current to off-current ratios (~10 6 ). These improvements resulted in nanowire FET sensors with lowest (~3%) reported sensor to sensor variations, compared to literature studies. Also, these improved nanowire sensors have the highest reported sensitivity and enhanced signal to noise ratio with the lowest reported defect density of 1x10 18 eV -1 cm -3 in comparison to literature data. In summary, this work brings the nanowire sensor technology a step closer to commercial products for early diagnosis and monitoring of diseases.

Vertically integrated logic circuits constructed using ZnO-nanowire-based field-effect transistors on plastic substrates.

PubMed

Kang, Jeongmin; Moon, Taeho; Jeon, Youngin; Kim, Hoyoung; Kim, Sangsig

2013-05-01

ZnO-nanowire-based logic circuits were constructed by the vertical integration of multilayered field-effect transistors (FETs) on plastic substrates. ZnO nanowires with an average diameter of -100 nm were synthesized by thermal chemical vapor deposition for use as the channel material in FETs. The ZnO-based FETs exhibited a high I(ON)/I(OFF) of > 10(6), with the characteristic of n-type depletion modes. For vertically integrated logic circuits, three multilayer FETs were sequentially prepared. The stacked FETs were connected in series via electrodes, and C-PVPs were used for the layer-isolation material. The NOT and NAND gates exhibited large logic-swing values of -93%. These results demonstrate the feasibility of three dimensional flexible logic circuits.

High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

NASA Astrophysics Data System (ADS)

Cui, Yunkang; Chen, Jing; Di, Yunsong; Zhang, Xiaobing; Lei, Wei

2017-12-01

In this paper, a facile method to fabricate the flexible field emission devices (FEDs) based on SiC nanostructure emitters by a thermal evaporation method has been demonstrated. The composition characteristics of SiC nanowires was characterized by X-ray diffraction (XRD), selected area electron diffraction (SAED) and energy dispersive X-ray spectrometer (EDX), while the morphology was revealed by field emission scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The results showed that the SiC nanowires grew along the [111] direction with the diameter of ˜110 nm and length of˜30 μm. The flexible FEDs have been fabricated by transferring and screen-printing the SiC nanowires onto the flexible substrates exhibited excellent field emission properties, such as the low turn-on field (˜0.95 V/μm) and threshold field (˜3.26 V/μm), and the high field enhancement factor (β=4670). It is worth noting the current density degradation can be controlled lower than 2% per hour during the stability tests. In addition, the flexible FEDs based on SiC nanowire emitters exhibit uniform bright emission modes under bending test conditions. As a result, this strategy is very useful for its potential application in the commercial flexible FEDs.

Growth of single-crystalline cobalt silicide nanowires and their field emission property.

PubMed

Lu, Chi-Ming; Hsu, Han-Fu; Lu, Kuo-Chang

2013-07-03

In this work, cobalt silicide nanowires were synthesized by chemical vapor deposition processes on Si (100) substrates with anhydrous cobalt chloride (CoCl2) as precursors. Processing parameters, including the temperature of Si (100) substrates, the gas flow rate, and the pressure of reactions were varied and studied; additionally, the physical properties of the cobalt silicide nanowires were measured. It was found that single-crystal CoSi nanowires were grown at 850°C ~ 880°C and at a lower gas flow rate, while single-crystal Co2Si nanowires were grown at 880°C ~ 900°C. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with field emission measurements demonstrates that CoSi nanowires are attractive choices for future applications in field emitters.

Growth of single-crystalline cobalt silicide nanowires and their field emission property

PubMed Central

2013-01-01

In this work, cobalt silicide nanowires were synthesized by chemical vapor deposition processes on Si (100) substrates with anhydrous cobalt chloride (CoCl2) as precursors. Processing parameters, including the temperature of Si (100) substrates, the gas flow rate, and the pressure of reactions were varied and studied; additionally, the physical properties of the cobalt silicide nanowires were measured. It was found that single-crystal CoSi nanowires were grown at 850°C ~ 880°C and at a lower gas flow rate, while single-crystal Co2Si nanowires were grown at 880°C ~ 900°C. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with field emission measurements demonstrates that CoSi nanowires are attractive choices for future applications in field emitters. PMID:23819795

Synthesis and excellent field emission properties of three-dimensional branched GaN nanowire homostructures

NASA Astrophysics Data System (ADS)

Li, Enling; Sun, Lihe; Cui, Zhen; Ma, Deming; Shi, Wei; Wang, Xiaolin

2016-10-01

Three-dimensional branched GaN nanowire homostructures have been synthesized on the Si substrate via a two-step approach by chemical vapor deposition. Structural characterization reveals that the single crystal GaN nanowire trunks have hexagonal wurtzite characteristics and grow along the [0001] direction, while the homoepitaxial single crystal branches grow in a radial direction from the six-sided surfaces of the trunks. The field emission measurements demonstrate that the branched GaN nanowire homostructures have excellent field emission properties, with low turn-on field at 2.35 V/μm, a high field enhancement factor of 2938, and long emission current stability. This indicates that the present branched GaN nanowire homostructures will become valuable for practical field emission applications.

Advances in nanowire bioelectronics

NASA Astrophysics Data System (ADS)

Zhou, Wei; Dai, Xiaochuan; Lieber, Charles M.

2017-01-01

Semiconductor nanowires represent powerful building blocks for next generation bioelectronics given their attractive properties, including nanometer-scale footprint comparable to subcellular structures and bio-molecules, configurable in nonstandard device geometries readily interfaced with biological systems, high surface-to-volume ratios, fast signal responses, and minimum consumption of energy. In this review article, we summarize recent progress in the field of nanowire bioelectronics with a focus primarily on silicon nanowire field-effect transistor biosensors. First, the synthesis and assembly of semiconductor nanowires will be described, including the basics of nanowire FETs crucial to their configuration as biosensors. Second, we will introduce and review recent results in nanowire bioelectronics for biomedical applications ranging from label-free sensing of biomolecules, to extracellular and intracellular electrophysiological recording.

Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around

NASA Astrophysics Data System (ADS)

Guerfi, Youssouf; Larrieu, Guilhem

2016-04-01

Nanowires are considered building blocks for the ultimate scaling of MOS transistors, capable of pushing devices until the most extreme boundaries of miniaturization thanks to their physical and geometrical properties. In particular, nanowires' suitability for forming a gate-all-around (GAA) configuration confers to the device an optimum electrostatic control of the gate over the conduction channel and then a better immunity against the short channel effects (SCE). In this letter, a large-scale process of GAA vertical silicon nanowire (VNW) MOSFETs is presented. A top-down approach is adopted for the realization of VNWs with an optimum reproducibility followed by thin layer engineering at nanoscale. Good overall electrical performances were obtained, with excellent electrostatic behavior (a subthreshold slope (SS) of 95 mV/dec and a drain induced barrier lowering (DIBL) of 25 mV/V) for a 15-nm gate length. Finally, a first demonstration of dual integration of n-type and p-type VNW transistors for the realization of CMOS inverter is proposed.

Effect of Si-doping on InAs nanowire transport and morphology

NASA Astrophysics Data System (ADS)

Wirths, S.; Weis, K.; Winden, A.; Sladek, K.; Volk, C.; Alagha, S.; Weirich, T. E.; von der Ahe, M.; Hardtdegen, H.; Lüth, H.; Demarina, N.; Grützmacher, D.; Schäpers, Th.

2011-09-01

The effect of Si-doping on the morphology, structure, and transport properties of nanowires was investigated. The nanowires were deposited by selective-area metal organic vapor phase epitaxy in an N2 ambient. It is observed that doping systematically affects the nanowire morphology but not the structure of the nanowires. However, the transport properties of the wires are greatly affected. Room-temperature four-terminal measurements show that with an increasing dopant supply the conductivity monotonously increases. For the highest doping level the conductivity is higher by a factor of 25 compared to only intrinsically doped reference nanowires. By means of back-gate field-effect transistor measurements it was confirmed that the doping results in an increased carrier concentration. Temperature dependent resistance measurements reveal, for lower doping concentrations, a thermally activated semiconductor-type increase of the conductivity. In contrast, the nanowires with the highest doping concentration show a metal-type decrease of the resistivity with decreasing temperature.

Room temperature-synthesized vertically aligned InSb nanowires: electrical transport and field emission characteristics

PubMed Central

2013-01-01

Vertically aligned single-crystal InSb nanowires were synthesized via the electrochemical method at room temperature. The characteristics of Fourier transform infrared spectrum revealed that in the syntheses of InSb nanowires, energy bandgap shifts towards the short wavelength with the occurrence of an electron accumulation layer. The current–voltage curve, based on the metal–semiconductor–metal model, showed a high electron carrier concentration of 2.0 × 1017 cm−3 and a high electron mobility of 446.42 cm2 V−1 s−1. Additionally, the high carrier concentration of the InSb semiconductor with the surface accumulation layer induced a downward band bending effect that reduces the electron tunneling barrier. Consequently, the InSb nanowires exhibit significant field emission properties with an extremely low turn-on field of 1.84 V μm−1 and an estimative threshold field of 3.36 V μm−1. PMID:23399075

Field-effect modulation of the thermoelectric characteristics of silicon nanowires on plastic substrates.

PubMed

Choi, Jinyong; Jeon, Youngin; Cho, Kyoungah; Kim, Sangsig

2016-12-02

In this study, we demonstrate the substantial enhancement of the thermoelectric power factors of silicon nanowires (SiNWs) on plastic substrates achievable by field-effect modulation. The Seebeck coefficient and electrical conductivity are adjusted by varying the charge carrier concentration via electrical modulation with a gate voltage in the 0 to ±5 range, thus enhancing the power factors from 2.08 to 935 μW K -2 m -1 ) for n-type SiNWs, and from 453 to 944 μW K -2 m -1 ) for p-type SiNWs. The electrically modulated thermoelectric characteristics of SiNWs are analyzed and discussed.

Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

NASA Astrophysics Data System (ADS)

Pura, J. L.; Anaya, J.; Souto, J.; Prieto, A. C.; Rodríguez, A.; Rodríguez, T.; Periwal, P.; Baron, T.; Jiménez, J.

2018-03-01

Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. Micro-Raman spectroscopy has been used as a characterization tool for semiconductor nanowires. The light/nanowire interaction can be experimentally assessed through the micro-Raman spectra of individual nanowires. As compared to both metallic and dielectric nanowires, semiconductor nanowires add additional tools for photon engineering. In particular, one can grow heterostructured nanowires, both axial and radial, and also one could modulate the doping level and the surface condition among other factors than can affect the light/NW interaction. We present herein a study of the optical response of group IV semiconductor nanowires to visible photons. The study is experimentally carried out through micro-Raman spectroscopy of different group IV nanowires, both homogeneous and axially heterostructured (SiGe/Si). The results are analyzed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances promising new photon engineering capabilities of semiconductor nanowires.

Field emission from in situ-grown vertically aligned SnO2 nanowire arrays

PubMed Central

2012-01-01

Vertically aligned SnO2 nanowire arrays have been in situ fabricated on a silicon substrate via thermal evaporation method in the presence of a Pt catalyst. The field emission properties of the SnO2 nanowire arrays have been investigated. Low turn-on fields of 1.6 to 2.8 V/μm were obtained at anode-cathode separations of 100 to 200 μm. The current density fluctuation was lower than 5% during a 120-min stability test measured at a fixed applied electric field of 5 V/μm. The favorable field-emission performance indicates that the fabricated SnO2 nanowire arrays are promising candidates as field emitters. PMID:22330800

Enhancement of electrical transport modulation in epitaxial VO2 nanowire field-effect transistor

NASA Astrophysics Data System (ADS)

Tanaka, Hidekazu; Chikanari, Masashi; Kanki, Teruo

Strongly correlated system vanadium dioxide VO2 has attracted widespread concerns from researchers as an exciting electronic material, due to the many intriguing features, especially metal-insulator transition (MIT) in vicinity of room temperature. In this work, we report a diverse geometry for high sensitivity in the transport modulation. By taking advantage of nanometer scale channel, instead of thin film channels, we demonstrated the enhancement of resistance modulation by applying gate voltage. Also we designed the insulating gate, consisting of high-k material Ta2O5/organic polymer parylene-C hybrid insulator. Such as this hybrid gate dielectric would effectively reduce interface deterioration of active channel oxide and provide sufficient carrier density. Moreover, benefited from the nanometer scale channel, the VO2 nanowire-based transistor could deliver a resistance modulation ratio over 8.5%, which are about 10 folds higher than that of the film case. Furthermore, this result is explained that in spite of the stronger field distribution in the edge parts of VO2 nanowire channel yielded little carrier density, the generated mobility modulation would biquadratic increase according to Brinkman-Rice picture as new finding.

The effect of nanowire length and diameter on the properties of transparent, conducting nanowire films

NASA Astrophysics Data System (ADS)

Bergin, Stephen M.; Chen, Yu-Hui; Rathmell, Aaron R.; Charbonneau, Patrick; Li, Zhi-Yuan; Wiley, Benjamin J.

2012-03-01

This article describes how the dimensions of nanowires affect the transmittance and sheet resistance of a random nanowire network. Silver nanowires with independently controlled lengths and diameters were synthesized with a gram-scale polyol synthesis by controlling the reaction temperature and time. Characterization of films composed of nanowires of different lengths but the same diameter enabled the quantification of the effect of length on the conductance and transmittance of silver nanowire films. Finite-difference time-domain calculations were used to determine the effect of nanowire diameter, overlap, and hole size on the transmittance of a nanowire network. For individual nanowires with diameters greater than 50 nm, increasing diameter increases the electrical conductance to optical extinction ratio, but the opposite is true for nanowires with diameters less than this size. Calculations and experimental data show that for a random network of nanowires, decreasing nanowire diameter increases the number density of nanowires at a given transmittance, leading to improved connectivity and conductivity at high transmittance (>90%). This information will facilitate the design of transparent, conducting nanowire films for flexible displays, organic light emitting diodes and thin-film solar cells.This article describes how the dimensions of nanowires affect the transmittance and sheet resistance of a random nanowire network. Silver nanowires with independently controlled lengths and diameters were synthesized with a gram-scale polyol synthesis by controlling the reaction temperature and time. Characterization of films composed of nanowires of different lengths but the same diameter enabled the quantification of the effect of length on the conductance and transmittance of silver nanowire films. Finite-difference time-domain calculations were used to determine the effect of nanowire diameter, overlap, and hole size on the transmittance of a nanowire network. For

A pH sensor with a double-gate silicon nanowire field-effect transistor

NASA Astrophysics Data System (ADS)

Ahn, Jae-Hyuk; Kim, Jee-Yeon; Seol, Myeong-Lok; Baek, David J.; Guo, Zheng; Kim, Chang-Hoon; Choi, Sung-Jin; Choi, Yang-Kyu

2013-02-01

A pH sensor composed of a double-gate silicon nanowire field-effect transistor (DG Si-NW FET) is demonstrated. The proposed DG Si-NW FET allows the independent addressing of the gate voltage and hence improves the sensing capability through an application of asymmetric gate voltage between the two gates. One gate is a driving gate which controls the current flow, and the other is a supporting gate which amplifies the shift of the threshold voltage, which is a sensing metric, and which arises from changes in the pH. The pH signal is also amplified through modulation of the gate oxide thickness.

Quantum dot-based local field imaging reveals plasmon-based interferometric logic in silver nanowire networks.

PubMed

Wei, Hong; Li, Zhipeng; Tian, Xiaorui; Wang, Zhuoxian; Cong, Fengzi; Liu, Ning; Zhang, Shunping; Nordlander, Peter; Halas, Naomi J; Xu, Hongxing

2011-02-09

We show that the local electric field distribution of propagating plasmons along silver nanowires can be imaged by coating the nanowires with a layer of quantum dots, held off the surface of the nanowire by a nanoscale dielectric spacer layer. In simple networks of silver nanowires with two optical inputs, control of the optical polarization and phase of the input fields directs the guided waves to a specific nanowire output. The QD-luminescent images of these structures reveal that a complete family of phase-dependent, interferometric logic functions can be performed on these simple networks. These results show the potential for plasmonic waveguides to support compact interferometric logic operations.

Near-field interaction between domain walls in adjacent permalloy nanowires

NASA Astrophysics Data System (ADS)

O'Brien, Liam

2010-03-01

A domain wall (DW) moving in a ferromagnetic nanowire may interact with the stray field from another DW travelling in an adjacent wire. This could greatly impact the operation of proposed DW based data storage schemes which rely on the controlled propagation of DWs in densely packed nanowires [1, 2]. Here we experimentally study the interaction between two DWs travelling in adjacent Permalloy nanowires [3]. We find that the interaction causes significant pinning, with measured pinning fields of up to 93 Oe (˜5 times the intrinsic pinning field of an isolated wire) for the smallest separations. We present an analysis of the observed pinning field dependence on wire separation in terms of the full magnetostatic charge distribution within a DW. By considering an isolated DW, and accounting for finite temperature, it is possible to fully reproduce the experimentally observed dependence. This suggests that the DW internal structure is not appreciably perturbed by the interaction and so remains rigid, consistent with a finite sized quasi-particle description [4]. The full charge distribution must be considered in understanding these near-field interactions as other models based on simpler descriptions of the charge distribution within the DW, including a point-like distribution, cannot reproduce the observed dependence. Finally, we develop the idea of using localized stray fields to pin a DW and show how specific potential landscapes can be created by tailoring a pinning charge distribution, with the added advantage that neither DW internal structure nor nanowire geometry is appreciably perturbed. [4pt] [1] Allwood, Cowburn et al. Science 309, 1688 (2005) [0pt] [2] S. S. Parkin, Science 320, 190 (2008) [0pt] [3] O'Brien, Cowburn et al. Phys. Rev. Lett. 103, 7, 077206 (2009) [0pt] [4] Saitoh, Miyajima et al. Nature 432, 203 (2004)

Cellular manipulation and patterning using ferromagnetic nanowires

NASA Astrophysics Data System (ADS)

Hultgren, Anne

Ferromagnetic nanowires are demonstrated as an effective tool to apply forces to living cells. Both magnetic cell separations and the magnetic patterning of cells on a substrate will be accomplished through the use of cell-nanowire interactions as well as nanowire-magnetic field interactions. When introduced into cultures of NIH-3T3 cells, the nanowires are internalized by cells via the integrin-mediated adhesion pathway without inflicting any toxic effects on the cell cycle over the course of several days. In addition, the length of the nanowires was found to have an effect on the cell-nanowire interactions when the cells were dissociated from the tissue culture dish. To compare the effectiveness of the nanowires as a means of manipulating cells to the current technology which is based on superparamagnetic beads, magnetic cell separations were performed with electrodeposited Ni nanowires 350 nm in diameter and 5--35 mum long in field gradients of 80 T/m. Single-pass separations of NIH-3T3 cells bound to nanowires achieve up to 81% purity with 85% yield, a dramatic improvement over the 55% purity and 20% yield obtained with the beads. The yield for the separations were found to be dependent on the length of the nanowires, and was maximized when the length of the nanowires equaled the diameter of the cells. This dependence was exploited to perform a size-selective magnetic separation. Substrates containing arrays of micro-magnets, fabricated using photolithography, were placed in cell cultures. These micro-magnet arrays create regions of locally strong magnetic field gradients to trap nanowires in specific locations on the substrate. These substrates were used in conjunction with fluid flow and a weak, externally applied magnetic field to create and control patterns of cells bound to nanowires. Controlled isolation of heterogeneous pairs and groups of cells will enable the study of the biochemistry of cell-cell contacts.

Magnetic field induced mixing of light hole excitonic states in (Cd, Mn)Te/(Cd, Mg)Te core/shell nanowires

NASA Astrophysics Data System (ADS)

Płachta, Jakub; Grodzicka, Emma; Kaleta, Anna; Kret, Sławomir; Baczewski, Lech T.; Pietruczik, Aleksiej; Wiater, Maciej; Goryca, Mateusz; Kazimierczuk, Tomasz; Kossacki, Piotr; Karczewski, Grzegorz; Wojtowicz, Tomasz; Wojnar, Piotr

2018-05-01

A detailed magneto-photoluminescence study of individual (Cd, Mn)Te/(Cd, Mg)Te core/shell nanowires grown by molecular beam epitaxy is performed. First of all, an enhancement of the Zeeman splitting due to sp-d exchange interaction between band carriers and Mn-spins is evidenced in these nanostructures. Then, it is found that the value of this splitting depends strongly on the magnetic field direction with respect to the nanowire axis. The largest splitting is observed when the magnetic field is applied perpendicular and the smallest when it is applied parallel to the nanowire axis. This effect is explained in terms of magnetic field induced valence band mixing and evidences the light hole character of the excitonic emission. The values of the light and heavy hole splitting are determined for several individual nanowires based on the comparison of experimental results to theoretical calculations.

Magnetic field induced mixing of light hole excitonic states in (Cd, Mn)Te/(Cd, Mg)Te core/shell nanowires.

PubMed

Płachta, Jakub; Grodzicka, Emma; Kaleta, Anna; Kret, Sławomir; Baczewski, Lech T; Pietruczik, Aleksiej; Wiater, Maciej; Goryca, Mateusz; Kazimierczuk, Tomasz; Kossacki, Piotr; Karczewski, Grzegorz; Wojtowicz, Tomasz; Wojnar, Piotr

2018-05-18

A detailed magneto-photoluminescence study of individual (Cd, Mn)Te/(Cd, Mg)Te core/shell nanowires grown by molecular beam epitaxy is performed. First of all, an enhancement of the Zeeman splitting due to sp-d exchange interaction between band carriers and Mn-spins is evidenced in these nanostructures. Then, it is found that the value of this splitting depends strongly on the magnetic field direction with respect to the nanowire axis. The largest splitting is observed when the magnetic field is applied perpendicular and the smallest when it is applied parallel to the nanowire axis. This effect is explained in terms of magnetic field induced valence band mixing and evidences the light hole character of the excitonic emission. The values of the light and heavy hole splitting are determined for several individual nanowires based on the comparison of experimental results to theoretical calculations.

Effect of nanowire curviness on the percolation resistivity of transparent, conductive metal nanowire networks

NASA Astrophysics Data System (ADS)

Hicks, Jeremy; Li, Junying; Ying, Chen; Ural, Ant

2018-05-01

We study the effect of nanowire curviness on the percolation resistivity of transparent, conductive metal nanowire networks by Monte Carlo simulations. We generate curvy nanowires as one-dimensional sticks using 3rd-order Bézier curves. The degree of curviness in the network is quantified by the concept of curviness angle and curl ratio. We systematically study the interaction between the effect of curviness and five other nanowire/device parameters on the network resistivity, namely nanowire density, nanowire length, device length, device width, and nanowire alignment. We find that the resistivity exhibits a power law dependence on the curl ratio, which is a signature of percolation transport. In each case, we extract the power-law scaling critical exponents and explain the results using geometrical and physical arguments. The value of the curl ratio critical exponent is not universal, but increases as the other nanowire/device parameters drive the network toward the percolation threshold. We find that, for randomly oriented networks, curviness is undesirable since it increases the resistivity. For well-aligned networks, on the other hand, some curviness is highly desirable, since the resistivity minimum occurs for partially curvy nanowires. We explain these results by considering the two competing effects of curviness on the percolation resistivity. The results presented in this work can be extended to any network, film, or nanocomposite consisting of one-dimensional nanoelements. Our results show that Monte Carlo simulations are an essential predictive tool for both studying the percolation transport and optimizing the electronic properties of transparent, conductive nanowire networks for a wide range of applications.

Solution-Processed Donor-Acceptor Polymer Nanowire Network Semiconductors For High-Performance Field-Effect Transistors

PubMed Central

Lei, Yanlian; Deng, Ping; Li, Jun; Lin, Ming; Zhu, Furong; Ng, Tsz-Wai; Lee, Chun-Sing; Ong, Beng S.

2016-01-01

Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics. Conjugated electron donor-acceptor (D-A) polymers have surfaced as ideal channel semiconductor candidates for OFETs. However, high-molecular weight (MW) D-A polymer semiconductors, which offer high field-effect mobility, generally suffer from processing complications due to limited solubility. Conversely, the readily soluble, low-MW D-A polymers give low mobility. We report herein a facile solution process which transformed a lower-MW, low-mobility diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (I) into a high crystalline order and high-mobility semiconductor for OFETs applications. The process involved solution fabrication of a channel semiconductor film from a lower-MW (I) and polystyrene blends. With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm2V−1s−1), on/off ratio (107), and other desirable field-effect properties that meet impactful OFET application requirements. PMID:27091315

Unusual negative permeability of single magnetic nanowire excited by the spin transfer torque effect

NASA Astrophysics Data System (ADS)

Han, Mangui; Zhou, Wu

2018-07-01

Due to the effect of spin transfer torque, negative imaginary parts of permeability (μ″ < 0) are reported in a ferromagnetic nanowire. It is found that negative μ″ values are resulted from the interaction of spin polarized conduction electrons with the spatially non-uniform distributed magnetic moments at both ends of nanowires. The results are well explained from the effect of spin transfer torque on the precession of magnetization under the excitation of both the pulsed magnetic field and static electric field.

High-performance silicon nanowire field-effect transistor with silicided contacts

NASA Astrophysics Data System (ADS)

Rosaz, G.; Salem, B.; Pauc, N.; Gentile, P.; Potié, A.; Solanki, A.; Baron, T.

2011-08-01

Undoped silicon nanowire (Si NW) field-effect transistors (FETs) with a back-gate configuration have been fabricated and characterized. A thick (200 nm) Si3N4 layer was used as a gate insulator and a p++ silicon substrate as a back gate. Si NWs have been grown by the chemical vapour deposition method using the vapour-liquid-solid mechanism and gold as a catalyst. Metallic contacts have been deposited using Ni/Al (80 nm/120 nm) and characterized before and after an optimized annealing step at 400 °C, which resulted in a great decrease in the contact resistance due to the newly formed nickel silicide/Si interface at source and drain. These optimized devices show a good hole mobility of around 200 cm2 V-1 s-1, in the same range as the bulk material, with a good ON current density of about 28 kA cm-2. Finally, hysteretic behaviour of NW channel conductance is discussed to explain the importance of NW surface passivation.

Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor

NASA Astrophysics Data System (ADS)

Li, Xiaojie; Wang, Ying; Zhang, Zhipeng; Ou, Hai; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-04-01

Lowering the driving voltage and improving the stability of nanowire field emitters are essential for them to be applied in devices. In this study the characteristics of zinc oxide (ZnO) nanowire field emitter arrays (FEAs) controlled by an amorphous indium–gallium–zinc-oxide thin film transistor (a-IGZO TFT) were studied. A low driving voltage along with stabilization of the field emission current were achieved. Modulation of field emission currents up to three orders of magnitude was achieved at a gate voltage of 0–32 V for a constant anode voltage. Additionally, a-IGZO TFT control can dramatically reduce the emission current fluctuation (i.e., from 46.11 to 1.79% at an emission current of ∼3.7 µA). Both the a-IGZO TFT and ZnO nanowire FEAs were prepared on glass substrates in our research, demonstrating the feasibility of realizing large area a-IGZO TFT-controlled ZnO nanowire FEAs.

Comparison of Current and Field Driven Domain Wall Motion in Beaded Permalloy Nanowires

NASA Astrophysics Data System (ADS)

Lage, Enno; Dutta, Sumit; Ross, Caroline A.

2015-03-01

Domain wall based devices are promising candidates for non-volatile memory devices with no static power consumption. A common approach is the use of (field assisted) current driven domain wall motion in magnetic nanowires. In such systems local variations in linewidth act as obstacles for propagating domain walls. In this study we compare simulated field driven and current driven domain wall motion in permalloy nanowires with anti-notches. The simulations were obtained using the Object Oriented MicroMagnetics Framework (OOMMF). The wires with a constant thickness of 8 nm exhibit linewidths ranging from 40 nm to 300 nm. Circular shaped anti-notches extend the linewidth locally by 10% to 30% and raise information about the domain wall propagation in such beaded nanowires. The results are interpreted in terms of the observed propagation behavior and summarized in maps indicating ranges of different ability to overcome the pinning caused by anti-notches of different sizes. Furthermore, regimes of favored domain wall type (transverse walls or vortex walls) and complex propagation effects like walker breakdown behavior or dynamic change between domain wall structures are identified The authors thank the German Academic Exchange Service (DAAD) for funding.

Nanowire Tunnel Field Effect Transistors: Prospects and Pitfalls

NASA Astrophysics Data System (ADS)

Sylvia, Somaia Sarwat

The tunnel field effect transistor (TFET) has the potential to operate at lower voltages and lower power than the field effect transistor (FET). The TFET can circumvent the fundamental thermal limit of the inverse subthreshold slope (S) by exploiting interband tunneling of non-equilibrium "cold" carriers. The conduction mechanism in the TFET is governed by band-to-band tunneling which limits the drive current. TFETs built with III-V materials like InAs and InSb can produce enough tunneling current because of their small direct bandgap. Our simulation results show that although they require highly degenerate source doping to support the high electric fields in the tunnel region, the devices achieve minimum inverse subthreshold slopes of 30 mV/dec. In subthreshold, these devices experience both regimes of voltage-controlled tunneling and cold-carrier injection. Numerical results based on a discretized 8-band k.p model are compared to analytical WKB theory. For both regular FETs and TFETs, direct channel tunneling dominates the leakage current when the physical gate length is reduced to 5 nm. Therefore, a survey of materials is performed to determine their ability to suppress the direct tunnel current through a 5 nm barrier. The tunneling effective mass gives the best indication of the relative size of the tunnel currents. Si gives the lowest overall tunnel current for both the conduction and valence band and, therefore, it is the optimum choice for suppressing tunnel current at the 5 nm scale. Our numerical simulation shows that the finite number, random placement, and discrete nature of the dopants in the source of an InAs nanowire (NW) TFET affect both the mean value and the variance of the drive current and the inverse subthreshold slope. The discrete doping model gives an average drive current and an inverse subthreshold slope that are less than those predicted from the homogeneous doping model. The doping density required to achieve a target drive current is

Multiscale Study of Plasmonic Scattering and Light Trapping Effect in Silicon Nanowire Array Solar Cells.

PubMed

Meng, Lingyi; Zhang, Yu; Yam, ChiYung

2017-02-02

Nanometallic structures that support surface plasmons provide new ways to confine light at deep-subwavelength scales. The effect of light scattering in nanowire array solar cells is studied by a multiscale approach combining classical electromagnetic (EM) and quantum mechanical simulations. A photovoltaic device is constructed by integrating a silicon nanowire array with a plasmonic silver nanosphere. The light scatterings by plasmonic element and nanowire array are obtained via classical EM simulations, while current-voltage characteristics and optical properties of the nanowire cells are evaluated quantum mechanically. We found that the power conversion efficiency (PCE) of photovoltaic device is substantially improved due to the local field enhancement of the plasmonic effect and light trapping by the nanowire array. In addition, we showed that there exists an optimal nanowire number density in terms of optical confinement and solar cell PCE.

Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates.

PubMed

Lee, Myeongwon; Koo, Jamin; Chung, Eun-Ae; Jeong, Dong-Young; Koo, Yong-Seo; Kim, Sangsig

2009-11-11

A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p+ drain and n+ channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.

Conductance oscillations of core-shell nanowires in transversal magnetic fields

NASA Astrophysics Data System (ADS)

Manolescu, Andrei; Nemnes, George Alexandru; Sitek, Anna; Rosdahl, Tomas Orn; Erlingsson, Sigurdur Ingi; Gudmundsson, Vidar

2016-05-01

We analyze theoretically electronic transport through a core-shell nanowire in the presence of a transversal magnetic field. We calculate the conductance for a variable coupling between the nanowire and the attached leads and show how the snaking states, which are low-energy states localized along the lines of the vanishing radial component of the magnetic field, manifest their existence. In the strong-coupling regime they induce flux periodic, Aharonov-Bohm-like, conductance oscillations, which, by decreasing the coupling to the leads, evolve into well-resolved peaks. The flux periodic oscillations arise due to interference of the snaking states, which is a consequence of backscattering at either the contacts with leads or magnetic or potential barriers in the wire.

Transmission type flat-panel X-ray source using ZnO nanowire field emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Daokun; Song, Xiaomeng; Zhang, Zhipeng

2015-12-14

A transmission type flat-panel X-ray source in diode structure was fabricated. Large-scale patterned ZnO nanowires grown on a glass substrate by thermal oxidation were utilized as field emitters, and tungsten thin film coated on silica glass was used as the transmission anode. Uniform distribution of X-ray generation was achieved, which benefited from the uniform electron emission from ZnO nanowires. Self-ballasting effect induced by the intrinsic resistance of ZnO nanowire and decreasing of screening effect caused by patterned emitters account for the uniform emission. Characteristic X-ray peaks of W-L lines and bremsstrahlung X-rays have been observed under anode voltages at amore » range of 18–20 kV, the latter of which were the dominant X-ray signals. High-resolution X-ray images with spatial resolution less than 25 μm were obtained by the flat-panel X-ray source. The high resolution was attributed to the small divergence angle of the emitted X-rays from the transmission X-ray source.« less

The Laser-Assisted Field Effect Transistor Gas Sensor Based on Morphological Zinc-Excited Tin-Doped In2O3 Nanowires

NASA Astrophysics Data System (ADS)

Shariati, Mohsen; Khosravinejad, Fariba

The gas nanosensor of indium oxide nanowires in laser assisted approach, doped with tin and zinc for gas sensing and 1D growth purposes respectively, was reported. The nanowires were very sensitive to H2S gas in low concentration of 20ppb gas at room temperature. The fast dynamic intensive and sensitive response to gas was in a few seconds with an on/off sensitivity ratio of around 10. The square cross-section indium oxide nanowires were fabricated through physical vapor deposition (PVD) mechanism and annealing approach. The field emission scanning electron microscopy (FESEM) observations indicated that the annealing temperature was vital in nanostructures’ morphology. The fabricated nanowires for the optimized annealing temperature in applied growth technique were around 60nm in diameter.

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

PubMed

Liu, Zhihong; Zhang, Hui; Wang, Lei; Yang, Deren

2008-09-17

Nickel silicide nanowire arrays have been achieved by the decomposition of SiH(4) on Ni foil at 650 °C. It is indicated that the nickel silicide nanowires consist of roots with diameter of about 100-200 nm and tips with diameter of about 10-50 nm. A Ni diffusion controlled mechanism is proposed to explain the formation of the nickel silicide nanowires. Field emission measurement shows that the turn-on field of the nickel silicide nanowire arrays is low, at about 3.7 V µm(-1), and the field enhancement factor is as high as 4280, so the arrays have promising applications as emitters.

Random crystal field effect on the magnetic and hysteresis behaviors of a spin-1 cylindrical nanowire

NASA Astrophysics Data System (ADS)

Zaim, N.; Zaim, A.; Kerouad, M.

2017-02-01

In this work, the magnetic behavior of the cylindrical nanowire, consisting of a ferromagnetic core of spin-1 atoms surrounded by a ferromagnetic shell of spin-1 atoms is studied in the presence of a random crystal field interaction. Based on Metropolis algorithm, the Monte Carlo simulation has been used to investigate the effects of the concentration of the random crystal field p, the crystal field D and the shell exchange interaction Js on the phase diagrams and the hysteresis behavior of the system. Some characteristic behaviors have been found, such as the first and second-order phase transitions joined by tricritical point for appropriate values of the system parameters, triple and isolated critical points can be also found. Depending on the Hamiltonian parameters, single, double and para hysteresis regions are explicitly determined.

Prevalence of information stored in arrays of magnetic nanowires against external fields

NASA Astrophysics Data System (ADS)

Ceballos, D.; Cisternas, E.; Vogel, E. E.; Allende, S.

2018-04-01

Arrays of magnetic nanowires in porous alumina can be used to store information inscribed on the system by orienting the magnetization of selected wires pointing in a desired direction, so symbols can be read as ferromagnetic sectors. However, this information is subject to aging and the stored information could be gradually lost. We investigate here two mechanisms proposed to improve the prevalence of the stored information: opposite ferromagnetic band at the center of the symbol and bi-segmented nanowires acting as two layers of nanowires storing the same information. Both mechanisms prove to increase resistance to the action of external magnetic fields for the case of Ni wires in a geometry compatible with actually grown nanowires. Advantages and disadvantages of these mechanisms are discussed.

Penetration length-dependent hot electrons in the field emission from ZnO nanowires

NASA Astrophysics Data System (ADS)

Chen, Yicong; Song, Xiaomeng; Li, Zhibing; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-01-01

In the framework of field emission, whether or not hot electrons can form in the semiconductor emitters under a surface penetration field is of great concern, which will provide not only a comprehensive physical picture of field emission from semiconductor but also guidance on how to improve device performance. However, apart from some theoretical work, its experimental evidence has not been reported yet. In this article, the field penetration length-dependent hot electrons were observed in the field emission of ZnO nanowires through the in-situ study of its electrical and field emission characteristic before and after NH3 plasma treatment in an ultrahigh vacuum system. After the treatment, most of the nanowires have an increased carrier density but reduced field emission current. The raised carrier density was caused by the increased content of oxygen vacancies, while the degraded field emission current was attributed to the lower kinetic energy of hot electrons caused by the shorter penetration length. All of these results suggest that the field emission properties of ZnO nanowires can be optimized by modifying their carrier density to balance both the kinetic energy of field induced hot electrons and the limitation of saturated current under a given field.

A silicon carbide nanowire field effect transistor for DNA detection

NASA Astrophysics Data System (ADS)

Fradetal, L.; Bano, E.; Attolini, G.; Rossi, F.; Stambouli, V.

2016-06-01

This work reports on the label-free electrical detection of DNA molecules for the first time, using silicon carbide (SiC) as a novel material for the realization of nanowire field effect transistors (NWFETs). SiC is a promising semiconductor for this application due to its specific characteristics such as chemical inertness and biocompatibility. Non-intentionally n-doped SiC NWs are first grown using a bottom-up vapor-liquid-solid (VLS) mechanism, leading to the NWs exhibiting needle-shaped morphology, with a length of approximately 2 μm and a diameter ranging from 25 to 60 nm. Then, the SiC NWFETs are fabricated and functionalized with DNA molecule probes via covalent coupling using an amino-terminated organosilane. The drain current versus drain voltage (I d-V d) characteristics obtained after the DNA grafting and hybridization are reported from the comparative and simultaneous measurements carried out on the SiC NWFETs, used either as sensors or references. As a representative result, the current of the sensor is lowered by 22% after probe DNA grafting and by 7% after target DNA hybridization, while the current of the reference does not vary by more than ±0.6%. The current decrease confirms the field effect induced by the negative charges of the DNA molecules. Moreover, the selectivity, reproducibility, reversibility and stability of the studied devices are emphasized by de-hybridization, non-complementary hybridization and re-hybridization experiments. This first proof of concept opens the way for future developments using SiC-NW-based sensors.

Optical Control of Internal Electric Fields in Band Gap-Graded InGaN Nanowires

NASA Astrophysics Data System (ADS)

Erhard, N.; Sarwar, A. T. M. Golam; Yang, F.; McComb, D. W.; Myers, R. C.; Holleitner, A. W.

2015-01-01

InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent. Consistent with quantitative band structure simulations we observe a sign change in the measured photocurrent as a function of photon flux. This negative differential photocurrent opens the path to a new type of nanowire-based photodetector. We demonstrate that the photocurrent response of the nanowires is as fast as 1.5 ps.

Effect of atomic layer deposition temperature on the performance of top-down ZnO nanowire transistors

PubMed Central

2014-01-01

This paper studies the effect of atomic layer deposition (ALD) temperature on the performance of top-down ZnO nanowire transistors. Electrical characteristics are presented for 10-μm ZnO nanowire field-effect transistors (FETs) and for deposition temperatures in the range 120°C to 210°C. Well-behaved transistor output characteristics are obtained for all deposition temperatures. It is shown that the maximum field-effect mobility occurs for an ALD temperature of 190°C. This maximum field-effect mobility corresponds with a maximum Hall effect bulk mobility and with a ZnO film that is stoichiometric. The optimized transistors have a field-effect mobility of 10 cm2/V.s, which is approximately ten times higher than can typically be achieved in thin-film amorphous silicon transistors. Furthermore, simulations indicate that the drain current and field-effect mobility extraction are limited by the contact resistance. When the effects of contact resistance are de-embedded, a field-effect mobility of 129 cm2/V.s is obtained. This excellent result demonstrates the promise of top-down ZnO nanowire technology for a wide variety of applications such as high-performance thin-film electronics, flexible electronics, and biosensing. PMID:25276107

Evolution of Nanowire Transmon Qubits and Their Coherence in a Magnetic Field

NASA Astrophysics Data System (ADS)

Luthi, F.; Stavenga, T.; Enzing, O. W.; Bruno, A.; Dickel, C.; Langford, N. K.; Rol, M. A.; Jespersen, T. S.; Nygârd, J.; Krogstrup, P.; DiCarlo, L.

2018-03-01

We present an experimental study of flux- and gate-tunable nanowire transmons with state-of-the-art relaxation time allowing quantitative extraction of flux and charge noise coupling to the Josephson energy. We evidence coherence sweet spots for charge, tuned by voltage on a proximal side gate, where first order sensitivity to switching two-level systems and background 1 /f noise is minimized. Next, we investigate the evolution of a nanowire transmon in a parallel magnetic field up to 70 mT, the upper bound set by the closing of the induced gap. Several features observed in the field dependence of qubit energy relaxation and dephasing times are not fully understood. Using nanowires with a thinner, partially covering Al shell will enable operation of these circuits up to 0.5 T, a regime relevant for topological quantum computation and other applications.

Nonvolatile memory with graphene oxide as a charge storage node in nanowire field-effect transistors

NASA Astrophysics Data System (ADS)

Baek, David J.; Seol, Myeong-Lok; Choi, Sung-Jin; Moon, Dong-Il; Choi, Yang-Kyu

2012-02-01

Through the structural modification of a three-dimensional silicon nanowire field-effect transistor, i.e., a double-gate FinFET, a structural platform was developed which allowed for us to utilize graphene oxide (GO) as a charge trapping layer in a nonvolatile memory device. By creating a nanogap between the gate and the channel, GO was embedded after the complete device fabrication. By applying a proper gate voltage, charge trapping, and de-trapping within the GO was enabled and resulted in large threshold voltage shifts. The employment of GO with FinFET in our work suggests that graphitic materials can potentially play a significant role for future nanoelectronic applications.

Current-driven dynamics of skyrmions stabilized in MnSi nanowires revealed by topological Hall effect

PubMed Central

Liang, Dong; DeGrave, John P.; Stolt, Matthew J.; Tokura, Yoshinori; Jin, Song

2015-01-01

Skyrmions hold promise for next-generation magnetic storage as their nanoscale dimensions may enable high information storage density and their low threshold for current-driven motion may enable ultra-low energy consumption. Skyrmion-hosting nanowires not only serve as a natural platform for magnetic racetrack memory devices but also stabilize skyrmions. Here we use the topological Hall effect (THE) to study phase stability and current-driven dynamics of skyrmions in MnSi nanowires. THE is observed in an extended magnetic field-temperature window (15–30 K), suggesting stabilization of skyrmions in nanowires compared with the bulk. Furthermore, we show in nanowires that under the high current density of 108–109 A m−2, the THE decreases with increasing current densities, which demonstrates the current-driven motion of skyrmions generating the emergent electric field in the extended skyrmion phase region. These results open up the exploration of skyrmions in nanowires for fundamental physics and magnetic storage technologies. PMID:26400204

Green urea synthesis catalyzed by hematite nanowires in magnetic field

NASA Astrophysics Data System (ADS)

Yahya, Noorhana; Qureshi, Saima; Rehman, Zia ur; Alqasem, Bilal; Fai Kait, Chong

2017-04-01

The catalytic activity of hematite (α-Fe2O3) nanowires under the influence of magnetic field on urea synthesis is considered green. The adsorption and subsequent dissociative reaction of hydrogen, nitrogen and carbon dioxide gases on the α-Fe2O3 (111) nanowires were investigated using the density functional theory (DFT) method. The average adsorption energy is -4.12 kcal/mole at different sites. The adsorption of gases resulted in a difference in density and net spin of electrons from 68 to 120 and 0-21 respectively. In addition, it induces magnetic moment value of 36.33 μB, which confirms the enhanced magnetic behaviour of hematite. α-Fe2O3 nanowires (NWs) synthesized by heating iron wire in a box furnace at (750-800) °C and as synthesized α-Fe2O3 nanoparticles (NPs) were received to use as a catalyst in the magnetic reaction of urea synthesis. X-ray Diffractometer (XRD) confirms the peaks of rhombohedral structure of α-Fe2O3 and Raman spectrum analyses confirms the α-Fe2O3 peaks at 410 cm-1, 500 cm-1 and 616 cm-1. The needle-like shape of hematite nanowires with length ranging from 16-25) μm and diameter from 74 to 145 nm confirmed by Field emission scanning electron microscopy (FESEM). The magnetic properties of the nanowires exhibited different levels of saturation magnetization, for α-Fe2O3 perpendicularly aligned direction (13.18 emu/g) and random direction (10.73 emu/g). Urea synthesis was done under magnetic field ranges from 0.0 to 2.5 T. The activation energy of α-Fe2O3 NWs for urea production is lower than NPs in the range of 0-1 T, whereas it is reversed for higher magnetic induction values. Fourier transform infrared spectroscopy (FTIR) confirmed the formation of urea at the peaks of 1690-1600 cm-1. This green urea employing magnetically induced method could be a contender to the Haber-Bosch process currently used by the current industry which utilizes high temperature and high pressure.

In2O3 nanowire based field effect transistor for biological sensors.

NASA Astrophysics Data System (ADS)

Zeng, Zhongming; Wang, Kai; Zhou, Weilie

2008-03-01

Semiconductor nanowires (NWs) are attracting considerable attention due to their nanoscale dimensions and enormous surface-to-volume ratios. Many applications have been demonstrated in toxic gas, protein, small molecule and viruses sensing because of their superior sensing performances. Indium oxide (In2O3) NWs have been successfully applied for toxic gas and small organic molecule sensing. In our experiment, In2O3 NWs based field effect transistors (FET) are fabricated for virus (Ricin) detections. Single-crystalline In2O3 NWs with diameters around 100 nm were synthesized by the thermal evaporation. The nanodevice based on In2O3 NWs bridges the source/drain electrodes with a channel length of ˜5 μm. Basic transport properties of devices were measured before biological detection. The I-V curves with the gate voltage Vg=0 shows good ohmic contact and the resistance is about 10 Mφ. The back-gate effect on the conductivity showed that In2O3 NW is working as n-type channel with obvious back-gate effect, which is much stronger than the reported results. The nanodevices used as virus detection will be also discussed.

Spin-orbit coupling effects in zinc-blende InSb and wurtzite InAs nanowires: Realistic calculations with multiband k .p method

NASA Astrophysics Data System (ADS)

Campos, Tiago; Faria Junior, Paulo E.; Gmitra, Martin; Sipahi, Guilherme M.; Fabian, Jaroslav

2018-06-01

A systematic numerical investigation of spin-orbit fields in the conduction bands of III-V semiconductor nanowires is performed. Zinc-blende (ZB) InSb nanowires are considered along [001], [011], and [111] directions, while wurtzite (WZ) InAs nanowires are studied along [0001] and [10 1 ¯0 ] or [11 2 ¯0 ] directions. Robust multiband k .p Hamiltonians are solved by using plane-wave expansions of real-space parameters. In all cases, the linear and cubic spin-orbit coupling parameters are extracted for nanowire widths from 30 to 100 nm. Typical spin-orbit energies are on the μ eV scale, except for WZ InAs nanowires grown along [10 1 ¯0 ] or [11 2 ¯0 ] , in which the spin-orbit energy is about meV, largely independent of the wire diameter. Significant spin-orbit coupling is obtained by applying a transverse electric field, causing the Rashba effect. For an electric field of about 4 mV/nm, the obtained spin-orbit energies are about 1 meV for both materials in all investigated growth directions. The most favorable system, in which the spin-orbit effects are maximal, are WZ InAs nanowires grown along [1010] or [11 2 ¯0 ] since here spin-orbit energies are giant (meV) already in the absence of electric field. The least favorable are InAs WZ nanowires grown along [0001] since here even the electric field does not increase the spin-orbit energies beyond 0.1 meV. The presented results should be useful for investigations of optical orientation, spin transport, weak localization, and superconducting proximity effects in semiconductor nanowires.

Plasmonic engineering of metal-oxide nanowire heterojunctions in integrated nanowire rectification units

NASA Astrophysics Data System (ADS)

Lin, Luchan; Zou, Guisheng; Liu, Lei; Duley, Walt W.; Zhou, Y. Norman

2016-05-01

We show that irradiation with femtosecond laser pulses can produce robust nanowire heterojunctions in coupled non-wetting metal-oxide Ag-TiO2 structures. Simulations indicate that joining arises from the effect of strong plasmonic localization in the region of the junction. Strong electric field effects occur in both Ag and TiO2 resulting in the modification of both surfaces and an increase in wettability of TiO2, facilitating the interconnection of Ag and TiO2 nanowires. Irradiation leads to the creation of a thin layer of highly defected TiO2 in the contact region between the Ag and TiO2 nanowires. The presence of this layer allows the formation of a heterojunction and offers the possibility of engineering the electronic characteristics of interfacial structures. Rectifying junctions with single and bipolar properties have been generated in Ag-TiO2 nanowire circuits incorporating asymmetrical and symmetrical interfacial structures, respectively. This fabrication technique should be applicable for the interconnection of other heterogeneous metal-oxide nanowire components and demonstrates that femtosecond laser irradiation enables interfacial engineering for electronic applications of integrated nanowire structures.

Patterned growth of carbon nanotubes over vertically aligned silicon nanowire bundles for achieving uniform field emission.

PubMed

Hung, Yung-Jr; Huang, Yung-Jui; Chang, Hsuan-Chen; Lee, Kuei-Yi; Lee, San-Liang

2014-01-01

A fabrication strategy is proposed to enable precise coverage of as-grown carbon nanotube (CNT) mats atop vertically aligned silicon nanowire (VA-SiNW) bundles in order to realize a uniform bundle array of CNT-SiNW heterojunctions over a large sample area. No obvious electrical degradation of as-fabricated SiNWs is observed according to the measured current-voltage characteristic of a two-terminal single-nanowire device. Bundle arrangement of CNT-SiNW heterojunctions is optimized to relax the electrostatic screening effect and to maximize the field enhancement factor. As a result, superior field emission performance and relatively stable emission current over 12 h is obtained. A bright and uniform fluorescent radiation is observed from CNT-SiNW-based field emitters regardless of its bundle periodicity, verifying the existence of high-density and efficient field emitters on the proposed CNT-SiNW bundle arrays.

Precise Placement of Metallic Nanowires on a Substrate by Localized Electric Fields and Inter-Nanowire Electrostatic Interaction

PubMed Central

2017-01-01

Placing nanowires at the predetermined locations on a substrate represents one of the significant hurdles to be tackled for realization of heterogeneous nanowire systems. Here, we demonstrate spatially-controlled assembly of a single nanowire at the photolithographically recessed region at the electrode gap with high integration yield (~90%). Two popular routes, such as protruding electrode tips and recessed wells, for spatially-controlled nanowire alignment, are compared to investigate long-range dielectrophoretic nanowire attraction and short-range nanowire-nanowire electrostatic interaction for determining the final alignment of attracted nanowires. Furthermore, the post-assembly process has been developed and tested to make a robust electrical contact to the assembled nanowires, which removes any misaligned ones and connects the nanowires to the underlying electrodes of circuit. PMID:29048363

Magneto-optical spectrum and the effective excitonic Zeeman splitting energies of Mn and Co-doped CdSe nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xiong, Wen, E-mail: wenxiong@cqu.edu.cn; Chen, Wensuo

2013-12-21

The electronic structure of Mn and Co-doped CdSe nanowires are calculated based on the six-band k·p effective-mass theory. Through the calculation, it is found that the splitting energies of the degenerate hole states in Mn-doped CdSe nanowires are larger than that in Co-doped CdSe nanowires when the concentration of these two kinds of magnetic ions is the same. In order to analysis the magneto-optical spectrum of Mn and Co-doped CdSe nanowires, the four lowest electron states and the four highest hole states are sorted when the magnetic field is applied, and the 10 lowest optical transitions between the conduction subbandsmore » and the valence subbands at the Γ point in Mn and Co-doped CdSe nanowires are shown in the paper, it is found that the order of the optical transitions at the Γ point almost do not change although two different kinds of magnetic ions are doped in CdSe nanowires. Finally, the effective excitonic Zeeman splitting energies at the Γ point are found to increase almost linearly with the increase of the concentration of the magnetic ions and the magnetic field; meanwhile, the giant positive effective excitonic g factors in Mn and Co-doped CdSe nanowires are predicted based on our theoretical calculation.« less

Fracture and buckling of piezoelectric nanowires subject to an electric field

NASA Astrophysics Data System (ADS)

Zhang, Jin; Wang, Chengyuan; Adhikari, Sondipon

2013-11-01

Fracture and buckling are major failure modes of thin and long nanowires (NWs), which could be affected significantly by an electric field when piezoelectricity is involved in the NWs. This paper aims to examine the issue based on the molecular dynamics simulations, where the gallium nitride (GaN) NWs are taken as an example. The results show that the influence of the electric field is strong for the fracture and the critical buckling strains, detectable for the fracture strength but almost negligible for the critical buckling stress. In addition, the reversed effects are achieved for the fracture and the critical buckling strains. Subsequently, the Timoshenko beam model is utilized to account for the effect of the electric field on the axial buckling of the GaN NWs, where nonlocal effect is observed and characterized by the nonlocal coefficient e0a=1.1 nm. The results show that the fracture and buckling of piezoelectric NWs can be controlled by applying an electric field.

Radiation Effects in III-V Nanowire Devices

DTIC Science & Technology

2016-09-01

Nanowire Devices Distribution Statement A. Approved for public release; distribution is unlimited. September 2016 HDTRA1-11-1-0021 Steven R...Name: Prof. S. R. J. Brueck Organization/Institution: University of New Mexico Project Title: Radiation Effects in III-V Nanowire Devices What are...the agency approved application or plan. The objectives of this program were to: a) develop a new nanowire transistor technology based on nanoscale

Polaronic effects due to quasi-confined optical phonons in wurtzite nitride nanowire in the presence of an electric field

NASA Astrophysics Data System (ADS)

Vardanyan, Karen A.; Asatryan, Anna L.; Vartanian, Arshak L.

2015-07-01

Considering the effect of an external electric field in wurtzite nitride cylindrical nanowire (NW), the polaron self-energy and effective mass due to the electron interaction with the quasi-confined optical phonons are studied theoretically by means of Lee-Low-Pines variational approach. The analytical expressions for the quasi-one-dimensional Fröhlich polaron self-energy and effective mass are obtained as functions of the wire radius and the strength of the electric field applied perpendicular to the wire axis. It is found that the main contribution to polaron basic parameters is from higher frequency optical phonon modes. The numerical results on the GaN material show that the polaron self-energy increases with the increase of the electric field and is more sensitive to the field when the wire radius is larger. It is also found that the polaron self-energy in GaN NWs is higher than that in zinc-blende GaAs-based cylindrical NWs.

Phase-field model of vapor-liquid-solid nanowire growth

NASA Astrophysics Data System (ADS)

Wang, Nan; Upmanyu, Moneesh; Karma, Alain

2018-03-01

We present a multiphase-field model to describe quantitatively nanowire growth by the vapor-liquid-solid (VLS) process. The free-energy functional of this model depends on three nonconserved order parameters that distinguish the vapor, liquid, and solid phases and describe the energetic properties of various interfaces, including arbitrary forms of anisotropic γ plots for the solid-vapor and solid-liquid interfaces. The evolution equations for those order parameters describe basic kinetic processes including the rapid (quasi-instantaneous) equilibration of the liquid catalyst to a droplet shape with constant mean curvature, the slow incorporation of growth atoms at the droplet surface, and crystallization within the droplet. The standard constraint that the sum of the phase fields equals unity and the conservation of the number of catalyst atoms, which relates the catalyst volume to the concentration of growth atoms inside the droplet, are handled via separate Lagrange multipliers. An analysis of the model is presented that rigorously maps the phase-field equations to a desired set of sharp-interface equations for the evolution of the phase boundaries under the constraint of force balance at three-phase junctions (triple points) given by the Young-Herring relation that includes torque term related to the anisotropy of the solid-liquid and solid-vapor interface excess free energies. Numerical examples of growth in two dimensions are presented for the simplest case of vanishing crystalline anisotropy and the more realistic case of a solid-liquid γ plot with cusped minima corresponding to two sets of (10 ) and (11 ) facets. The simulations reproduce many of the salient features of nanowire growth observed experimentally, including growth normal to the substrate with tapering of the side walls, transitions between different growth orientations, and crawling growth along the substrate. They also reproduce different observed relationships between the nanowire growth

Effect of liquid gate bias rising time in pH sensors based on Si nanowire ion sensitive field effect transistors

NASA Astrophysics Data System (ADS)

Jang, Jungkyu; Choi, Sungju; Kim, Jungmok; Park, Tae Jung; Park, Byung-Gook; Kim, Dong Myong; Choi, Sung-Jin; Lee, Seung Min; Kim, Dae Hwan; Mo, Hyun-Sun

2018-02-01

In this study, we investigate the effect of rising time (TR) of liquid gate bias (VLG) on transient responses in pH sensors based on Si nanowire ion-sensitive field-effect transistors (ISFETs). As TR becomes shorter and pH values decrease, the ISFET current takes a longer time to saturate to the pH-dependent steady-state value. By correlating VLG with the internal gate-to-source voltage of the ISFET, we found that this effect occurs when the drift/diffusion of mobile ions in analytes in response to VLG is delayed. This gives us useful insight on the design of ISFET-based point-of-care circuits and systems, particularly with respect to determining an appropriate rising time for the liquid gate bias.

The electronic structure and effective excitonic g factors of GaAs/GaMnAs core-shell nanowires

NASA Astrophysics Data System (ADS)

Li, Dong-Xiao; Xiong, Wen

2017-12-01

We calculate the electronic structures of cylindrical GaAs/GaMnAs core-shell nanowires in the magnetic field based on the eight-band effective-mass kṡp theory, and it is found that the hole states can present strong band-crossings. The probability densities of several lowest electron states and highest hole states at the Γ point are analyzed, and strangely, the distribution of the electron states are more complex than that of the hole states. Furthermore, the components of the electron states will change substantially as the increase of the radius R, which are almost unchanged for the hole states. A very interesting phenomenon is that the effective excitonic g factors gex can be tuned from a large positive value for GaMnAs nanowires to a small negative value for GaAs nanowires, and gex of GaAs nanowires and GaMnAs nanowires will vary slightly and greatly, respectively as the increase of the magnetic field. Meanwhile, we can obtain large gex in cylindrical GaAs/GaMnAs core-shell nanowires when the small magnetic field, the large concentration of manganese ions, the small core radius and the small radius are chosen. Another important result is also found that the radiative intensities of two σ polarized lights can be separated gradually by decreasing the core radius Rc , which can be used to detect two σ polarized lights in the experiment.

Electromagnetic field redistribution induced selective plasmon driven surface catalysis in metal nanowire-film systems

PubMed Central

Pan, Liang; Huang, Yingzhou; Yang, Yanna; Xiong, Wen; Chen, Guo; Su, Xun; Wei, Hua; Wang, Shuxia; Wen, Weijia

2015-01-01

For the novel interpretation of Raman spectrum from molecule at metal surface, the plasmon driven surface catalysis (PDSC) reactions have become an interesting topic in the research field of surface enhanced Raman scattering (SERS). In this work, the selective PDSC reactions of p,p’-dimercaptoazobenzene (DMAB) produced from para-aminothiophenol (PATP) or 4-nitrobenzenethiol (4NBT) were demonstrated in the Ag nanowires dimer-Au film systems. The different SERS spectra collected at individual part and adjacent part of the same nanowire-film system pointed out the importance of the electromagnetic field redistribution induced by image charge on film in this selective surface catalysis, which was confirmed by the simulated electromagnetic simulated electro- magnetic field distributions. Our result indicated this electromagnetic field redistribution induced selective surface catalysis was largely affected by the polarization and wavelength of incident light but slightly by the difference in diameters between two nanowires. Our work provides a further understanding of PDSC reaction in metal nanostructure and could be a deep support for the researches on surface catalysis and surface analysis. PMID:26601698

Preparation and magnetic properties of nickel nanowires by reduction in ethylene glycol medium under the influence of magnetic field

NASA Astrophysics Data System (ADS)

Sun, Wanshuo; Cheng, Junsheng; Li, Lankai; Chen, Shunzhong; Chang, Kun

2017-01-01

Nickel nanowires have successfully been fabricated through a simple liquid reduction in ethylene glycol medium with a 0.3T magnetic field applied. The effect of uniform magnetic field and solvent on the morphology and the crystal structure of magnetic nickel were studied. Scanning electron microscope images and transmission electron scope images s how that the effect of the external magnetic field on the morphology of nickel nanowires. X-ray diffraction shows the crystal structure of as-prepared products. And a energy disperse spectroscopy and a vibrating sample magnetometer are used to analyze the composition and static magnetic properties. The results show that the straight wires with an average diameter of about 100 nm and a length of several microns were obtained and mainly composed by fcc structure in the solvent of ethylene glycol. Magnetic measurements show that the saturation magnetization of the as-obtained products in a 0.3 T external magnetic field is 36 emu/g, less than that of bulk nickel crystal, and the coercivity of them is 186 emu/g, larger than that of bulk crystal with the mole ratio of sodium borohydride to nickel sulfate is 1:1000. This kind of nanowires array has potential applications with the special one-dimensional structures.

Fabrication of Si3N4 nanowire membranes: free standing disordered nanopapers and aligned nanowire assemblies

NASA Astrophysics Data System (ADS)

Liu, Haitao; Fang, Minghao; Huang, Zhaohui; Huang, Juntong; Liu, Yan-gai; Wu, Xiaowen

2016-08-01

Herein, ultralong silicon nitride nanowires were synthesized via a chemical vapor deposition method by using the low-cost quartz and silicon powder as raw materials. Simple processes were used for the fabrication of disordered and ordered nanowire membranes of pure silicon nitride nanowires. The nanowires in the disordered nanopapers are intertwined with each other to form a paper-like structure which exhibit excellent flame retardancy and mechanical properties. Fourier-transform infrared spectroscopy and thermal gravity analysis were employed to characterize the refractory performance of the disordered nanopapers. Highly ordered nanowire membranes were also assembled through a three-phase assembly approach which make the Si3N4 nanowires have potential use in textured ceramics and semiconductor field. Moreover, the surface nanowires can also be modified to be hydrophobic; this characteristic make the as-prepared nanowires have the potential to be assembled by the more effective Langmuir-Blodgett method and also make the disordered nanopapers possess a super-hydrophobic surface.

GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors

NASA Astrophysics Data System (ADS)

Yu, Feng; Yao, Shengbo; Römer, Friedhard; Witzigmann, Bernd; Schimpke, Tilman; Strassburg, Martin; Bakin, Andrey; Schumacher, Hans Werner; Peiner, Erwin; Suryo Wasisto, Hutomo; Waag, Andreas

2017-03-01

Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel devices in the fields of optoelectronics and nanoelectronics. In this work, GaN NW arrays have been designed and fabricated by combining suitable nanomachining processes including dry and wet etching. After inductively coupled plasma dry reactive ion etching, the GaN NWs are subsequently treated in wet chemical etching using AZ400K developer (i.e., with an activation energy of 0.69 ± 0.02 eV and a Cr mask) to form hexagonal and smooth a-plane sidewalls. Etching experiments using potassium hydroxide (KOH) water solution reveal that the sidewall orientation preference depends on etchant concentration. A model concerning surface bonding configuration on crystallography facets has been proposed to understand the anisotropic wet etching mechanism. Finally, NW array-based vertical field-effect transistors with wrap-gated structure have been fabricated. A device composed of 99 NWs exhibits enhancement mode operation with a threshold voltage of 1.5 V, a superior electrostatic control, and a high current output of >10 mA, which prevail potential applications in next-generation power switches and high-temperature digital circuits.

Transport properties of Sb-doped Si nanowires

NASA Astrophysics Data System (ADS)

Nukala, Prathyusha; Sapkota, Gopal; Gali, Pradeep; Philipose, U.

2012-08-01

We present a safe and cost-effective approach for synthesis of n-type Sb-doped Si nanowires. The nanowires were synthesized at ambient pressure using SiCl4 as Si source and pure Sb as the dopant source. Structural and compositional characterization using electron microscopy and X-ray spectroscopy show crystalline nanowires with lengths of 30-40 μm and diameters of 40-100 nm. A 3-4 nm thick amorphous oxide shell covers the surface of the nanowire, post-growth. The composition of this shell was confirmed by Raman spectroscopy. Growth of Si nanowires, followed by low temperature annealing in Sb vapor, was shown to be an effective technique for synthesizing Sb-doped Si nanowires. The doping concentration of Sb was found to be dependent on temperature, with Sb re-evaporating from the Si nanowire at higher doping temperatures. Field effect transistors (FETs) were fabricated to investigate the electrical transport properties of these nanowires. The as-grown Si nanowires were found to be p-type with a channel mobility of 40 cm2 V-1 s-1. After doping with Sb, these nanowires exhibited n-type behavior. The channel mobility and carrier concentration of the Sb-doped Si nanowires were estimated to be 288 cm2 V-1 s-1 and 5.3×1018 cm-3 respectively.

Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanaka, H., E-mail: tanaka@semicon.kuee.kyoto-u.ac.jp; Mori, S.; Morioka, N.

2014-12-21

We calculated the phonon-limited hole mobility in rectangular cross-sectional [001], [110], [111], and [112]-oriented germanium nanowires, and the hole transport characteristics were investigated. A tight-binding approximation was used for holes, and phonons were described by a valence force field model. Then, scattering probability of holes by phonons was calculated taking account of hole-phonon interaction atomistically, and the linearized Boltzmann's transport equation was solved to calculate the hole mobility at low longitudinal field. The dependence of the hole mobility on nanowire geometry was analyzed in terms of the valence band structure of germanium nanowires, and it was found that the dependencemore » was qualitatively reproduced by considering an average effective mass and the density of states of holes. The calculation revealed that [110] germanium nanowires with large height along the [001] direction show high hole mobility. Germanium nanowires with this geometry are also expected to exhibit high electron mobility in our previous work, and thus they are promising for complementary metal-oxide-semiconductor (CMOS) applications.« less

Giant piezoelectric size effects in zinc oxide and gallium nitride nanowires. A first principles investigation.

PubMed

Agrawal, Ravi; Espinosa, Horacio D

2011-02-09

Nanowires made of materials with noncentrosymmetric crystal structure are under investigation for their piezoelectric properties and suitability as building blocks for next-generation self-powered nanodevices. In this work, we investigate the size dependence of piezoelectric coefficients in nanowires of two such materials - zinc oxide and gallium nitride. Nanowires, oriented along their polar axis, ranging from 0.6 to 2.4 nm in diameter were modeled quantum mechanically. A giant piezoelectric size effect is identified for both GaN and ZnO nanowires. However, GaN exhibits a larger and more extended size dependence than ZnO. The observed size effect is discussed in the context of charge redistribution near the free surfaces leading to changes in local polarization. The study reveals that local changes in polarization and reduction of unit cell volume with respect to bulk values lead to the observed size effect. These results have strong implication in the field of energy harvesting, as piezoelectric voltage output scales with the piezoelectric coefficient.

Directed Assembly of Cells with Magnetic Nanowires

NASA Astrophysics Data System (ADS)

Tanase, M.; Hultgren, A.; Chen, C. S.; Reich, D. H.

2003-03-01

We demonstrate the use of magnetic nanowires for assembly and manipulation of mammalian cells. Currently, superparamagnetic beads are used for manipulations of cells, but large field strengths and gradients are required for these to be effective. Unlike the beads, the large remnant magnetization of the nanowires offers the prospect of a variety of low-field manipulation techniques. Ferromagnetic nanowires suspended in fluids can be easily manipulated and assembled using small magnetic field [1]. The wires can be bound to cells, and the dipolar interaction between the nanowires can be used to create self-assembled cell chains. Microfabricated arrays of Py magnets were used to trap single cells or chains of cells bound to Ni nanowires. Possible applications of these techniques include controlled initiation of cell cultures, as well as isolation of individual cells. This work was supported by DARPA/AFOSR Grant No. F49620-02-1-0307 and by the David and Lucile Packard Foundation Grant No. 2001-17715. [1] M. Tanase et.al., Nanoletters 1, 155 (2001), J. Appl. Phys. 91, 8549 (2002).

The field effect transistor DNA biosensor based on ITO nanowires in label-free hepatitis B virus detecting compatible with CMOS technology.

PubMed

Shariati, Mohsen

2018-05-15

In this paper the field-effect transistor DNA biosensor for detecting hepatitis B virus (HBV) based on indium tin oxide nanowires (ITO NWs) in label free approach has been fabricated. Because of ITO nanowires intensive conductance and functional modified surface, the probe immobilization and target hybridization were increased strongly. The high resolution transmission electron microscopy (HRTEM) measurement showed that ITO nanowires were crystalline and less than 50nm in diameter. The single-stranded hepatitis B virus DNA (SS-DNA) was immobilized as probe on the Au-modified nanowires. The DNA targets were measured in a linear concentration range from 1fM to 10µM. The detection limit of the DNA biosensor was about 1fM. The time of the hybridization process for defined single strand was 90min. The switching ratio of the biosensor between "on" and "off" state was ~ 1.1 × 10 5 . For sensing the specificity of the biosensor, non-complementary, mismatch and complementary DNA oligonucleotide sequences were clearly discriminated. The HBV biosensor confirmed the highly satisfied specificity for differentiating complementary sequences from non-complementary and the mismatch oligonucleotides. The response time of the DNA sensor was 37s with a high reproducibility. The stability and repeatability of the DNA biosensor showed that the peak current of the biosensor retained 98% and 96% of its initial response for measurements after three and five weeks, respectively. Copyright © 2018 Elsevier B.V. All rights reserved.

On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell.

PubMed

Petterson, Maureen K; Lemaitre, Maxime G; Shen, Yu; Wadhwa, Pooja; Hou, Jie; Vasilyeva, Svetlana V; Kravchenko, Ivan I; Rinzler, Andrew G

2015-09-30

Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separated there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm(2) AM1.5G illumination, results in a short-circuit current density of 35 mA/cm(2) and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. A deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.

Ultralow-power non-volatile memory cells based on P(VDF-TrFE) ferroelectric-gate CMOS silicon nanowire channel field-effect transistors.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

2015-07-21

Nanowire-based ferroelectric-complementary metal-oxide-semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a direct readout voltage and ultralow power consumption. The reading state power consumption of this device is less than 0.1 pW, which is more than 10(5) times lower than the ON-state power consumption of single-channel ferroelectric memory. This result implies that Si NW FeCMOS memory devices are well suited for use in non-volatile memory chips in modern portable electronic devices, especially where low power consumption is critical for energy conservation and long-term use.

Field tuning the g factor in InAs nanowire double quantum dots.

PubMed

Schroer, M D; Petersson, K D; Jung, M; Petta, J R

2011-10-21

We study the effects of magnetic and electric fields on the g factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade regime. Rotations of single spins are driven using electric-dipole spin resonance. The g factors are extracted from the spin resonance condition as a function of the magnetic field direction, allowing determination of the full g tensor. Electric and magnetic field tuning can be used to maximize the g-factor difference and in some cases altogether quench the electric-dipole spin resonance response, allowing selective single spin control. © 2011 American Physical Society

Suppression of the overlap between Majorana fermions by orbital magnetic effects in semiconducting-superconducting nanowires

NASA Astrophysics Data System (ADS)

Dmytruk, Olesia; Klinovaja, Jelena

2018-04-01

We study both analytically and numerically the role of orbital effects caused by a magnetic field applied along the axis of a semiconducting Rashba nanowire in the topological regime hosting Majorana fermions. We demonstrate that the orbital effects can be effectively taken into account in a one-dimensional model by shifting the chemical potential and thus modifying the topological criterion. We focus on the energy splitting between two Majorana fermions in a finite nanowire and find a striking interplay between orbital and Zeeman effects on this splitting. In the limit of strong spin-orbit interaction, we find regimes where the amplitude of the oscillating splitting stays constant or even decays with increasing the magnetic field, in stark contrast to the commonly studied case where orbital effects of the magnetic field are neglected. The period of these oscillations is found to be almost constant in many parameter regimes.

Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors.

PubMed

Spies, Maria; Polaczyński, Jakub; Ajay, Akhil; Kalita, Dipankar; Luong, Minh Anh; Lähnemann, Jonas; Gayral, Bruno; den Hertog, Martien I; Monroy, Eva

2018-06-22

Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination. Their structure consists of a GaN nanowire incorporating an AlN/GaN/AlN heterostructure, which generates an internal electric field. The activity of the heterostructure is confirmed by the rectifying behavior of the current-voltage characteristics in the dark, as well as by the asymmetry of the photoresponse in magnitude and linearity. Under reverse bias (negative bias on the GaN cap segment), the detectors behave linearly with the impinging optical power when the nanowire diameter is below a certain threshold (≈80 nm), which corresponds to the total depletion of the nanowire stem due to the Fermi level pinning at the sidewalls. In the case of nanowires that are only partially depleted, their nonlinearity is explained by a nonlinear variation of the diameter of their central conducting channel under illumination.

Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors

NASA Astrophysics Data System (ADS)

Spies, Maria; Polaczyński, Jakub; Ajay, Akhil; Kalita, Dipankar; Luong, Minh Anh; Lähnemann, Jonas; Gayral, Bruno; den Hertog, Martien I.; Monroy, Eva

2018-06-01

Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination. Their structure consists of a GaN nanowire incorporating an AlN/GaN/AlN heterostructure, which generates an internal electric field. The activity of the heterostructure is confirmed by the rectifying behavior of the current–voltage characteristics in the dark, as well as by the asymmetry of the photoresponse in magnitude and linearity. Under reverse bias (negative bias on the GaN cap segment), the detectors behave linearly with the impinging optical power when the nanowire diameter is below a certain threshold (≈80 nm), which corresponds to the total depletion of the nanowire stem due to the Fermi level pinning at the sidewalls. In the case of nanowires that are only partially depleted, their nonlinearity is explained by a nonlinear variation of the diameter of their central conducting channel under illumination.

Electronic transport properties of single-crystal bismuth nanowire arrays

NASA Astrophysics Data System (ADS)

Zhang, Zhibo; Sun, Xiangzhong; Dresselhaus, M. S.; Ying, Jackie Y.; Heremans, J.

2000-02-01

We present here a detailed study of the electrical transport properties of single-crystal bismuth nanowire arrays embedded in a dielectric matrix. Measurements of the resistance of Bi nanowire arrays with different wire diameters (60-110 nm) have been carried out over a wide range of temperatures (2.0-300 K) and magnetic fields (0-5.4 T). The transport properties of a heavily Te-doped Bi nanowire array have also been studied. At low temperatures, we show that the wire boundary scattering is the dominant scattering process for carriers in the undoped single-crystal Bi nanowires, while boundary scattering is less important for a heavily Te-doped sample, consistent with general theoretical considerations. The temperature dependences of the zero-field resistivity and of the longitudinal magneto-coefficient of the Bi nanowires were also studied and were found to be sensitive to the wire diameter. The quantum confinement of carriers is believed to play an important role in determining the overall temperature dependence of the zero-field resistivity. Theoretical considerations of the quantum confinement effects on the electronic band structure and on the transport properties of Bi nanowires are discussed. Despite the evidence for localization effects and diffusive electron interactions at low temperatures (T<=4.0 K), localization effects are not the dominant mechanisms affecting the resistivity or the magnetoresistance in the temperature range of this study.

Electric field-induced emission enhancement and modulation in individual CdSe nanowires.

PubMed

Vietmeyer, Felix; Tchelidze, Tamar; Tsou, Veronica; Janko, Boldizsar; Kuno, Masaru

2012-10-23

CdSe nanowires show reversible emission intensity enhancements when subjected to electric field strengths ranging from 5 to 22 MV/m. Under alternating positive and negative biases, emission intensity modulation depths of 14 ± 7% are observed. Individual wires are studied by placing them in parallel plate capacitor-like structures and monitoring their emission intensities via single nanostructure microscopy. Observed emission sensitivities are rationalized by the field-induced modulation of carrier detrapping rates from NW defect sites responsible for nonradiative relaxation processes. The exclusion of these states from subsequent photophysics leads to observed photoluminescence quantum yield enhancements. We quantitatively explain the phenomenon by developing a kinetic model to account for field-induced variations of carrier detrapping rates. The observed phenomenon allows direct visualization of trap state behavior in individual CdSe nanowires and represents a first step toward developing new optical techniques that can probe defects in low-dimensional materials.

Ultralow-power complementary metal-oxide-semiconductor inverters constructed on Schottky barrier modified nanowire metal-oxide-semiconductor field-effect-transistors.

PubMed

Ma, R M; Peng, R M; Wen, X N; Dai, L; Liu, C; Sun, T; Xu, W J; Qin, G G

2010-10-01

We show that the threshold voltages of both n- and p-channel metal-oxide-semiconductor field-effect-transistors (MOSFETs) can be lowered to close to zero by adding extra Schottky contacts on top of nanowires (NWs). Novel complementary metal-oxide-semiconductor (CMOS) inverters are constructed on these Schottky barrier modified n- and p-channel NW MOSFETs. Based on the high performances of the modified n- and p-channel MOSFETs, especially the low threshold voltages, the as-fabricated CMOS inverters have low operating voltage, high voltage gain, and ultra-low static power dissipation.

Effect of temperature and geometric parameters on elastic properties of tungsten nanowire: A molecular dynamics study

NASA Astrophysics Data System (ADS)

Saha, Sourav; Mojumder, Satyajit; Mahboob, Monon; Islam, M. Zahabul

2016-07-01

Tungsten is a promising material and has potential use as battery anode. Tungsten nanowires are gaining attention from researchers all over the world for this wide field of application. In this paper, we investigated effect of temperature and geometric parameters (diameter and aspect ratio) on elastic properties of Tungsten nanowire. Aspect ratios (length to diameter ratio) considered are 8:1, 10:1, and 12:1 while diameter of the nanowire is varied from 1-4 nm. For 2 nm diameter sample (aspect ratio 10:1), temperature is varied (10K ~ 1500K) to observe elastic behavior of Tungsten nanowire under uniaxial tensile loading. EAM potential is used for molecular dynamic simulation. We applied constant strain rate of 109 s-1 to deform the nanowire. Elastic behavior is expressed through stress vs. strain plot. We also investigated the fracture mechanism of tungsten nanowire and radial distribution function. Investigation suggests peculiar behavior of Tungsten nanowire in nano-scale with double peaks in stress vs. strain diagram. Necking before final fracture suggests that actual elastic behavior of the material is successfully captured through atomistic modeling.

On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petterson, Maureen K.; Lemaitre, Maxime G.; Shen, Yu

Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separatedmore » there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm 2 AM1.5G illumination, results in a short-circuit current density of 35 mA/cm 2 and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. Finally, a deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.« less

On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell

DOE PAGES

Petterson, Maureen K.; Lemaitre, Maxime G.; Shen, Yu; ...

2015-09-09

Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separatedmore » there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm 2 AM1.5G illumination, results in a short-circuit current density of 35 mA/cm 2 and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. Finally, a deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.« less

GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors.

PubMed

Yu, Feng; Yao, Shengbo; Römer, Friedhard; Witzigmann, Bernd; Schimpke, Tilman; Strassburg, Martin; Bakin, Andrey; Schumacher, Hans Werner; Peiner, Erwin; Wasisto, Hutomo Suryo; Waag, Andreas

2017-03-03

Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel devices in the fields of optoelectronics and nanoelectronics. In this work, GaN NW arrays have been designed and fabricated by combining suitable nanomachining processes including dry and wet etching. After inductively coupled plasma dry reactive ion etching, the GaN NWs are subsequently treated in wet chemical etching using AZ400K developer (i.e., with an activation energy of 0.69 ± 0.02 eV and a Cr mask) to form hexagonal and smooth a-plane sidewalls. Etching experiments using potassium hydroxide (KOH) water solution reveal that the sidewall orientation preference depends on etchant concentration. A model concerning surface bonding configuration on crystallography facets has been proposed to understand the anisotropic wet etching mechanism. Finally, NW array-based vertical field-effect transistors with wrap-gated structure have been fabricated. A device composed of 99 NWs exhibits enhancement mode operation with a threshold voltage of 1.5 V, a superior electrostatic control, and a high current output of >10 mA, which prevail potential applications in next-generation power switches and high-temperature digital circuits.

Poole-Frenkel effect and phonon-assisted tunneling in GaAs nanowires.

PubMed

Katzenmeyer, Aaron M; Léonard, François; Talin, A Alec; Wong, Ping-Show; Huffaker, Diana L

2010-12-08

We present electronic transport measurements of GaAs nanowires grown by catalyst-free metal-organic chemical vapor deposition. Despite the nanowires being doped with a relatively high concentration of substitutional impurities, we find them inordinately resistive. By measuring sufficiently high aspect ratio nanowires individually in situ, we decouple the role of the contacts and show that this semi-insulating electrical behavior is the result of trap-mediated carrier transport. We observe Poole-Frenkel transport that crosses over to phonon-assisted tunneling at higher fields, with a tunneling time found to depend predominantly on fundamental physical constants as predicted by theory. By using in situ electron beam irradiation of individual nanowires, we probe the nanowire electronic transport when free carriers are made available, thus revealing the nature of the contacts.

Current-Driven Dynamics of Skyrmions Stabilized in MnSi Nanowires Revealed by Topological Hall Effect

NASA Astrophysics Data System (ADS)

Liang, Dong; Degrave, John; Stolt, Matthew; Tokura, Yoshinori; Jin, Song

2015-03-01

Skyrmions, novel topologically stable spin vortices, hold promise for next-generation high-density magnetic storage technologies due to their nanoscale domains and ultralow energy consumption. One-dimensional (1D) nanowires are ideal hosts for skyrmions since they not only serve as a natural platform for magnetic racetrack memory devices but also can potentially stabilize skyrmions. We use the topological Hall effect (THE) to study the phase stability and current-driven dynamics of the skyrmions in MnSi nanowires. The THE was observed in an extended magnetic field-temperature window (15 to 30 K), suggesting stabilization of skyrmion phase in nanowires compared with the bulk (27 to 29.5 K). Furthermore, we study skyrmion dynamics in this extended skyrmion phase region and found that under the high current-density of 108-109Am-2 enabled by nanowire geometry, the THE decreases with increasing current densities, which demonstrates the current-driven motion of skyrmions generating the emergent electric field. These results open up the exploration of nanowires as an attractive platform for investigating skyrmion physics in 1D systems and exploiting skyrmions in magnetic storage concepts. This work is supported by US National Science Foundation (ECCS-1231916) and JSPS Grant-in-Aid for Scientific Research No. 24224009.

Topological insulator nanowires and nanowire hetero-junctions

NASA Astrophysics Data System (ADS)

Deng, Haiming; Zhao, Lukas; Wade, Travis; Konczykowski, Marcin; Krusin-Elbaum, Lia

2014-03-01

The existing topological insulator materials (TIs) continue to present a number of challenges to complete understanding of the physics of topological spin-helical Dirac surface conduction channels, owing to a relatively large charge conduction in the bulk. One way to reduce the bulk contribution and to increase surface-to-volume ratio is by nanostructuring. Here we report on the synthesis and characterization of Sb2Te3, Bi2Te3 nanowires and nanotubes and Sb2Te3/Bi2Te3 heterojunctions electrochemically grown in porous anodic aluminum oxide (AAO) membranes with varied (from 50 to 150 nm) pore diameters. Stoichiometric rigid polycrystalline nanowires with controllable cross-sections were obtained using cell voltages in the 30 - 150 mV range. Transport measurements in up to 14 T magnetic fields applied along the nanowires show Aharonov-Bohm (A-B) quantum oscillations with periods corresponding to the nanowire diameters. All nanowires were found to exhibit sharp weak anti-localization (WAL) cusps, a characteristic signature of TIs. In addition to A-B oscillations, new quantization plateaus in magnetoresistance (MR) at low fields (< 0 . 7T) were observed. The analysis of MR as well as I - V characteristics of heterojunctions will be presented. Supported in part by NSF-DMR-1122594, NSF-DMR-1312483-MWN, and DOD-W911NF-13-1-0159.

Electric field-assisted deposition of nanowires on carbon nanotubes for nanoelectronics and sensor applications.

PubMed

Sivakumar, Kousik; Panchapakesan, Balaji

2005-02-01

Manipulation and control of matter at the nanoscale and atomic scale levels are crucial for the success of nanoscale sensors and actuators. The ability to control and synthesize multilayer structures using carbon nanotubes that will enable the building of electronic devices within a nanotube is still in its infancy. In this paper, we present results on selective electric field-assisted deposition of metals on carbon nanotubes realizing metallic nanowire structures. Silver and platinum nanowires have been fabricated using this approach for their applications in chemical sensing as catalytic materials to sniff toxic agents and in the area of biomedical nanotechnology for construction of artificial muscles. Electric field-assisted deposition allows the deposition of metals with a high degree of selectivity on carbon nanotubes by manipulating the charges on the surface of the nanotubes and forming electrostatic double-layer supercapacitors. Deposition of metals primarily occurred due to electrochemical reduction, electrophoresis, and electro-osmosis inside the walls of the nanotube. SEM and TEM investigations revealed silver and platinum nanowires between 10 nm and 100 nm in diameter. The present technique is versatile and enables the fabrication of a host of different types of metallic and semiconducting nanowires using carbon nanotube templates for nanoelectronics and a myriad of sensor applications.

Electrical and Optical Characterization of Nanowire based Semiconductor Devices

NASA Astrophysics Data System (ADS)

Ayvazian, Talin

This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand and optimize the electrical and optical properties of two types of nanoscale devices; in first type lithographically patterned nanowire electrodeposition (LPNE) method has been utilized to fabricate nanowire field effect transistors (NWFET) and second type involved the development of light emitting semiconductor nanowire arrays (NWLED). Field effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrode- position (LPNE) process on SiO2 /Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C x 4 h either with or without exposure to CdCl 2 in methanol a grain growth promoter. The influence of CdCl2 treatment was to increase the mean grain diameter as determined by X-ray diffraction pattern and to convert the crystal structure from cubic to wurtzite. Transfer characteristics showed an increase of the field effect mobility (mu eff) by an order of magnitude and increase of the Ion/I off ratio by a factor of 3-4. Light emitting devices (NW-LED) based on lithographically patterned pc-CdSe nanowire arrays have been investigated. Electroluminescence (EL) spectra of CdSe nanowires under various biases exhibited broad emission spectra centered at 750 nm close to the band gap of CdSe (1.7eV). To enhance the intensity of the emitted light and the external quantum efficiency (EQE), the distance between the contacts were reduced from 5 mum to less than 1 mum which increased the efficiency by an order of magnitude. Also, increasing the annealing temperature of nanowires from 300 °C x4 h to 450 This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand

Electrical tuning of spin splitting in Bi-doped ZnO nanowires

NASA Astrophysics Data System (ADS)

Aras, Mehmet; Kılıç, ćetin

2018-01-01

The effect of applying an external electric field on doping-induced spin-orbit splitting of the lowest conduction-band states in a bismuth-doped zinc oxide nanowire is studied by performing electronic structure calculations within the framework of density functional theory. It is demonstrated that spin splitting in Bi-doped ZnO nanowires could be tuned and enhanced electrically via control of the strength and direction of the applied electric field, thanks to the nonuniform and anisotropic response of the ZnO:Bi nanowire to external electric fields. The results reported here indicate that a single ZnO nanowire doped with a low concentration of Bi could function as a spintronic device, the operation of which is controlled by applied lateral electric fields.

Characterization of NiSi nanowires as field emitters and limitations of Fowler-Nordheim model at the nanoscale

NASA Astrophysics Data System (ADS)

Belkadi, Amina B.; Gale, E.; Isakovic, A. F.

2015-03-01

Nanoscale field emitters are of technological interest because of the anticipated faster turn-on time, better sustainability and compactness. This report focuses on NiSi nanowires as field emitters for two reasons: (a) possible enhancement of field emission in nanoscale field emitters over bulk, and (b) achieving the same field emission properties as in bulk, but at a lower energy cost. To this end, we have grown, fabricated and characterized NiSi nanowires as field emitters. Depending on the geometry of the NiSi nanowires (aspect ratio, shape etc.), the relevant major field emission parameters, such as (1) the turn-on field, (2) the work function, and (3) the field enhancement factor, can be comparable or even superior to other recently explored nanoscale field emitters, such as CdS and ZnO. We also report on a comparative performance of various nanoscale field emitters and on the difficulties in the performance comparison in the light of relatively poor applicability of the standard Folwer-Nordheim model for field emission analysis for the case of the nanoscale field emitters. Proposed modifications are discussed. This work is supported through SRC-ATIC Grant 2011-KJ-2190. We also acknoweldge BNL-CFN and Cornell CNF facilities and staff.

Electronic transport through Al/InN nanowire/Al junctions

DOE PAGES

Lu, Tzu -Ming; Wang, George T.; Pan, Wei; ...

2016-02-10

We report non-linear electronic transport measurement of Al/Si-doped n-type InN nanowire/Al junctions performed at T = 0.3 K, below the superconducting transition temperature of the Al electrodes. The proximity effect is observed in these devices through a strong dip in resistance at zero bias. In addition to the resistance dip at zero bias, several resistance peaks can be identified at bias voltages above the superconducting gap of the electrodes, while no resistance dip is observed at the superconducting gap. The resistance peaks disappear as the Al electrodes turn normal beyond the critical magnetic field except one which remains visible atmore » fields several times higher than critical magnetic field. An unexpected non-monotonic magnetic field dependence of the peak position is observed. As a result, we discuss the physical origin of these observations and propose that the resistance peaks could be the McMillan-Rowell oscillations arising from different closed paths localized near different regions of the junctions.« less

Directional and magnetic field enhanced emission of Cu-doped ZnO nanowires/p-GaN heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Viana, Bruno; Lupan, Oleg; Pauporté, Thierry

2011-01-01

The electrochemical deposition technique was used for the preparation of Cu-doped ZnO-nanowire-based emitters. Nanowires of high structural and optical quality were epitaxially grown on p-GaN single crystalline film substrates. We found that the emission is directional with a wavelength that is tuned and redshifted toward the visible region by doping with Cu in nanowires. Furthermore, Cu-doped ZnO-nanowires show an enhancement of the transition probability under magnetic field.

Controlling Disorder by Electric Field Directed Reconfiguration of Nanowires to Tune Random Lasing.

PubMed

Donahue, Philip P; Zhang, Chenji; Nye, Nicholas; Miller, Jennifer; Wang, Cheng-Yu; Tang, Rong; Christodoulides, Demetrios; Keating, Christine D; Liu, Zhiwen

2018-06-27

Top-down fabrication is commonly used to provide positioning control of optical structures; yet, it places stringent limitations on component materials and oftentimes, dynamic reconfigurability is challenging to realize. Here we present a reconfigurable nanoparticle platform that can integrate heterogeneous particle assembly of different shapes, sizes, and material compositions. We demonstrate dynamic manipulation of disorder in this platform and use it to controllably enhance or frustrate random laser emission for a suspension of titanium dioxide nanowires in a dye solution. Using an alternating current electric field, we control the nanowire orientation to dynamically control the collective scattering of the sample and thus light confinement. Our theoretical model indicates that an increase of 22% in scattering coefficient can be achieved for the experimentally determined nanowire length distribution upon alignment. As a result, a nearly 20-fold enhancement in lasing intensity was achieved. We illustrate the generality of the approach by demonstrating enhanced lasing for aligned nanowires of other materials including gold, mixed gold/dielectric and vanadium oxide (VxOy).

Field-effect-dependent thermoelectric power in highly resistive Sb2Se3 single nanowire

NASA Astrophysics Data System (ADS)

Sun, Kien Wen; Ko, Ting-Yu; Shellaiah, Muthaiah

2018-04-01

In this paper, we report the results of our experiments on and measurements of electrical resistivity and thermoelectric power (Seebeck coefficient) from single-crystalline antimony triselenide (Sb2Se3) single nanowires (NWs) with high resistivity ( σ 4.37 × 10-4 S/m). A positive Seebeck coefficient of approximately 661 µV/K at room temperature was obtained using a custom-made thermoelectric power probe with an alternating current lock-in method (the 2ω technique), which indicates that the thermal transport is dominated by holes. The measured Seebeck coefficient of the NWs is a factor of 2-3 lower than their bulk counterparts and is comparable to that of a highly conductive Sb2Se3 single NWs (approximately - 750 µV/K). We observed an increase in the Seebeck coefficients with increased bias voltages by field-effect gating, which cannot be explained by the modulation of the Fermi level in the NWs.

Effect of temperature and geometric parameters on elastic properties of tungsten nanowire: A molecular dynamics study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, Sourav, E-mail: ssaha09@me.buet.ac.bd; Mojumder, Satyajit; Mahboob, Monon

2016-07-12

Tungsten is a promising material and has potential use as battery anode. Tungsten nanowires are gaining attention from researchers all over the world for this wide field of application. In this paper, we investigated effect of temperature and geometric parameters (diameter and aspect ratio) on elastic properties of Tungsten nanowire. Aspect ratios (length to diameter ratio) considered are 8:1, 10:1, and 12:1 while diameter of the nanowire is varied from 1-4 nm. For 2 nm diameter sample (aspect ratio 10:1), temperature is varied (10 K ~ 1500 K) to observe elastic behavior of Tungsten nanowire under uniaxial tensile loading. EAMmore » potential is used for molecular dynamic simulation. We applied constant strain rate of 10{sup 9} s{sup −1} to deform the nanowire. Elastic behavior is expressed through stress vs. strain plot. We also investigated the fracture mechanism of tungsten nanowire and radial distribution function. Investigation suggests peculiar behavior of Tungsten nanowire in nano-scale with double peaks in stress vs. strain diagram. Necking before final fracture suggests that actual elastic behavior of the material is successfully captured through atomistic modeling.« less

Super-giant magnetoresistance at room-temperature in copper nanowires due to magnetic field modulation of potential barrier heights at nanowire-contact interfaces

NASA Astrophysics Data System (ADS)

Hossain, Md I.; Maksud, M.; Palapati, N. K. R.; Subramanian, A.; Atulasimha, J.; Bandyopadhyay, S.

2016-07-01

We have observed a super-giant (∼10 000 000%) negative magnetoresistance at 39 mT field in Cu nanowires contacted with Au contact pads. In these nanowires, potential barriers form at the two Cu/Au interfaces because of Cu oxidation that results in an ultrathin copper oxide layer forming between Cu and Au. Current flows when electrons tunnel through, and/or thermionically emit over, these barriers. A magnetic field applied transverse to the direction of current flow along the wire deflects electrons toward one edge of the wire because of the Lorentz force, causing electron accumulation at that edge and depletion at the other. This lowers the potential barrier at the accumulated edge and raises it at the depleted edge, causing a super-giant magnetoresistance at room temperature.

Super-giant magnetoresistance at room-temperature in copper nanowires due to magnetic field modulation of potential barrier heights at nanowire-contact interfaces.

PubMed

Hossain, Md I; Maksud, M; Palapati, N K R; Subramanian, A; Atulasimha, J; Bandyopadhyay, S

2016-07-29

We have observed a super-giant (∼10 000 000%) negative magnetoresistance at 39 mT field in Cu nanowires contacted with Au contact pads. In these nanowires, potential barriers form at the two Cu/Au interfaces because of Cu oxidation that results in an ultrathin copper oxide layer forming between Cu and Au. Current flows when electrons tunnel through, and/or thermionically emit over, these barriers. A magnetic field applied transverse to the direction of current flow along the wire deflects electrons toward one edge of the wire because of the Lorentz force, causing electron accumulation at that edge and depletion at the other. This lowers the potential barrier at the accumulated edge and raises it at the depleted edge, causing a super-giant magnetoresistance at room temperature.

PREFACE: Synthesis and integration of nanowires

NASA Astrophysics Data System (ADS)

Samuelson, L.

2006-06-01

The field of semiconductor nanowires has attracted much attention in recent years, from the areas of basic materials science, advanced characterization and technology, as well as from the perspective of the applications of nanowires. Research on large-sized whiskers and wires had already begun in the 1960s with the pioneering work of Wagner, as well as by other researchers. It was, however, in the early 1990s that Kenji Hiruma at Hitachi Central Research Laboratories in Japan first succeeded in developing methods for the growth of nanowires with dimensions on the scale of 10-100 nm, thereby initiating the field of growth and applications of nanowires, with a strong emphasis on epitaxial nucleation of nanowires on a single-crystalline substrate. Starting from the mid-1990s, the field developed very rapidly with the number of papers on the subject growing from ten per year to several thousand papers on the subject published annually today, although with a rather generous definition of the concept of nanowires. With this rapid development we have seen many new and different approaches to the growth of nanowires, technological advances leading to a more well-controlled formation of nanowires, new innovative methods for the characterization of structures, as well as a wealth of approaches towards the use of nanowires in electronics, photonics and sensor applications. This issue contains contributions from many different laboratories, each adding significant detail to the development of the field of research. The contributions cover issues such as basic growth, advanced characterization and technology, and application of nanowires. I would like to acknowledge the shared responsibilities for this special issue of Nanotechnology on the synthesis and integration of nanowires with my co-Editors, S Tong Lee and M Sunkara, as well as the highly professional support from Dr Nina Couzin, Dr Ian Forbes and the Nanotechnology team from the Institute of Physics Publishing.

Simplifying Nanowire Hall Effect Characterization by Using a Three-Probe Device Design.

PubMed

Hultin, Olof; Otnes, Gaute; Samuelson, Lars; Storm, Kristian

2017-02-08

Electrical characterization of nanowires is a time-consuming and challenging task due to the complexity of single nanowire device fabrication and the difficulty in interpreting the measurements. We present a method to measure Hall effect in nanowires using a three-probe device that is simpler to fabricate than previous four-probe nanowire Hall devices and allows characterization of nanowires with smaller diameter. Extraction of charge carrier concentration from the three-probe measurements using an analytical model is discussed and compared to simulations. The validity of the method is experimentally verified by a comparison between results obtained with the three-probe method and results obtained using four-probe nanowire Hall measurements. In addition, a nanowire with a diameter of only 65 nm is characterized to demonstrate the capabilities of the method. The three-probe Hall effect method offers a relatively fast and simple, yet accurate way to quantify the charge carrier concentration in nanowires and has the potential to become a standard characterization technique for nanowires.

Silicon nanowires as field-effect transducers for biosensor development: a review.

PubMed

Noor, M Omair; Krull, Ulrich J

2014-05-12

The unique electronic properties and miniaturized dimensions of silicon nanowires (SiNWs) are attractive for label-free, real-time and sensitive detection of biomolecules. Sensors based on SiNWs operate as field effect transistors (FETs) and can be fabricated either by top-down or bottom-up approaches. Advances in fabrication methods have allowed for the control of physicochemical and electronic properties of SiNWs, providing opportunity for interfacing of SiNW-FET probes with intracellular environments. The Debye screening length is an important consideration that determines the performance and detection limits of SiNW-FET sensors, especially at physiologically relevant conditions of ionic strength (>100mM). In this review, we discuss the construction and application of SiNW-FET sensors for detection of ions, nucleic acids and protein markers. Advantages and disadvantages of the top-down and bottom-up approaches for synthesis of SiNWs are discussed. An overview of various methods for surface functionalization of SiNWs for immobilization of selective chemistry is provided in the context of impact on the analytical performance of SiNW-FET sensors. In addition to in vitro examples, an overview of the progress of use of SiNW-FET sensors for ex vivo studies is also presented. This review concludes with a discussion of the future prospects of SiNW-FET sensors. Copyright © 2014 Elsevier B.V. All rights reserved.

Doping of germanium nanowires grown in presence of PH3

NASA Astrophysics Data System (ADS)

Tutuc, E.; Chu, J. O.; Ott, J. A.; Guha, S.

2006-12-01

The authors study the Au-catalyzed chemical vapor growth of germanium (Ge) nanowires in the presence of phosphine (PH3), used as a dopant precursor. The device characteristics of the ensuing nanowire field effect transistors (FETs) indicate n-type, highly doped nanowires. Using a combination of different nanowire growth sequences and their FET characteristics, the authors determine that phosphorus incorporates predominately via the conformal growth, which accompanies the acicular, nanowire growth. As such, the Ge nanowires grown in the presence of PH3 contain a phosphorus doped shell and an undoped core. The authors determine the doping level in the shell to be ≃(1-4)×1019cm-3.

Artificially modified magnetic anisotropy in interconnected nanowire networks.

PubMed

Araujo, Elsie; Encinas, Armando; Velázquez-Galván, Yenni; Martínez-Huerta, Juan Manuel; Hamoir, Gaël; Ferain, Etienne; Piraux, Luc

2015-01-28

Interconnected or crossed magnetic nanowire networks have been fabricated by electrodeposition into a polycarbonate template with crossed cylindrical nanopores oriented ±30° with respect to the surface normal. Tailor-made nanoporous polymer membranes have been designed by performing a double energetic heavy ion irradiation with fixed incidence angles. The Ni and Ni/NiFe nanowire networks have been characterized by magnetometry as well as ferromagnetic resonance and compared with parallel nanowire arrays of the same diameter and density. The most interesting feature of these nanostructured materials is a significant reduction of the magnetic anisotropy when the external field is applied perpendicular and parallel to the plane of the sample. This effect is attributed to the relative orientation of the nanowire axes with the applied field. Moreover, the microwave transmission spectra of these nanowire networks display an asymmetric linewidth broadening, which may be interesting for the development of low-pass filters. Nanoporous templates made of well-defined nanochannel network constitute an interesting approach to fabricate materials with controlled anisotropy and microwave absorption properties that can be easily modified by adjusting the relative orientation of the nanochannels, pore sizes and material composition along the length of the nanowire.

Positive magnetoresistance in Fe3Se4 nanowires

NASA Astrophysics Data System (ADS)

Li, D.; Jiang, J. J.; Liu, W.; Zhang, Z. D.

2011-04-01

We report the magnetotransport properties of Fe3Se4 nanowire arrays in anodic aluminum oxide (AAO) porous membrane. The temperature dependence of resistance of Fe3Se4 nanowires at a zero field shows thermal activated behavior below 295 K. The exponential relationship in resistance is consistent with the model of strong localization with variable-range hopping (VRH) for a finite one-dimensional wire. Resistance versus magnetic field curves below 100 K show small positive magnetoresistance (MR). The field dependencies of log[R(H)/R(0)] explain the positive MR as the effect of magnetic field on the VRH conduction.

Extraordinary Magnetic Field Enhancement with Metallic Nanowire: Role of Surface Impedance in Babinet's Principle for Sub-Skin-Depth Regime

NASA Astrophysics Data System (ADS)

Koo, Sukmo; Kumar, M. Sathish; Shin, Jonghwa; Kim, Daisik; Park, Namkyoo

2009-12-01

We propose and analyze the “complementary” structure of a metallic nanogap, namely, the metallic nanowire for magnetic field enhancement. A huge enhancement of the field up to a factor of 300 was achieved. Introducing the surface impedance concept, we also develop and numerically confirm a new analytic theory which successfully predicts the field enhancement factors for metal nanostructures. Compared to the predictions of the classical Babinet principle applied to a nanogap, an order of magnitude difference in the field enhancement factor was observed for the sub-skin-depth regime nanowire.

Magnetic properties of cylindrical diameter modulated Ni80Fe20 nanowires: interaction and coercive fields

NASA Astrophysics Data System (ADS)

Salem, Mohamed Shaker; Sergelius, Philip; Corona, Rosa M.; Escrig, Juan; Görlitz, Detlef; Nielsch, Kornelius

2013-04-01

Magnetic properties of cylindrical Ni80Fe20 nanowires with modulated diameters are investigated theoretically as a function of their geometrical parameters and compared with those produced inside the pores of anodic alumina membranes by pulsed electrodeposition. We observe that the Ni80Fe20 nanowires with modulated diameters reverse their magnetization via the nucleation and propagation of a vortex domain wall. The system begins generating vortex domains in the nanowire ends and in the transition region between the two segments to minimize magnetostatic energy generated by surfaces perpendicular to the initial magnetization of the sample. Besides, we observed an increase of the coercivity for the sample with equal volumes in relation to the sample with equal lengths. Finally, the interaction field is stronger in the case of constant volume segments. These structures could be used to control the motions of magnetic domain walls. In this way, these nanowires with modulated diameters can be an alternative to store information or even perform logic functions.

Field-emission property of self-purification SiC/SiOx coaxial nanowires synthesized via direct microwave irradiation using iron-containing catalyst

NASA Astrophysics Data System (ADS)

Zhou, Qing; Yu, Yongzhi; Huang, Shan; Meng, Jiang; Wang, Jigang

2017-07-01

SiC/SiOx coaxial nanowires were rapidly synthesized via direct microwave irradiation in low vacuum atmosphere. During the preparation process, only graphite, silicon, silicon dioxide powders were used as raw materials and iron-containing substance was employed as catalyst. Comprehensive characterizations were employed to investigate the microstructure of the products. The results showed that a great quantity of coaxial nanowires with uniform sizes and high aspect ratio had been successfully achieved. The coaxial nanowires consist of a silicon oxide (SiOx) shell and a β-phase silicon carbide (β-SiC) core that exhibited in special tube brush like. In additional, nearly all the products were achieved in the statement of pure SiC/SiOx coaxial nanowires without the existence of metallic catalyst, indicating that the self-removal of iron (Fe) catalyst should be occurred during the synthesis process. Photoluminescence (PL) spectral analysis result indicated that such novel SiC/SiOx coaxial nanowires exhibited significant blue-shift. Besides, the measurement results of field-emission (FE) demonstrated that the SiC/SiOx coaxial nanowires had ultralow turn-on field and threshold field with values of 0.2 and 2.1 V/μm, respectively. The hetero-junction structure formed between SiOx shell and SiC core, lots of emission sites, as well as clear tips of the nanowires were applied to explain the excellent FE properties.[Figure not available: see fulltext.

Stability of charged density waves in InAs nanowires in an external magnetic field

NASA Astrophysics Data System (ADS)

Zhukov, A. A.; Volk, Ch; Winden, A.; Hardtdegen, H.; Schäpers, Th

2017-11-01

We report on magnetotransport measurements at T=4.2 K in a high-quality InAs nanowire (R_wire ∼ 20 kΩ) in the presence of the charged tip of an atomic force microscope serving as a mobile gate. We demonstrate the crucial role of the external magnetic field on the amplitude of the charge density waves with a wavelength of 0.8 μm. The observed suppression rate of their amplitude is similar or slightly higher than the one for weak localization correction in our investigated InAs nanowire.

Tunable Nanowire Patterning Using Standing Surface Acoustic Waves

PubMed Central

Chen, Yuchao; Ding, Xiaoyun; Lin, Sz-Chin Steven; Yang, Shikuan; Huang, Po-Hsun; Nama, Nitesh; Zhao, Yanhui; Nawaz, Ahmad Ahsan; Guo, Feng; Wang, Wei; Gu, Yeyi; Mallouk, Thomas E.; Huang, Tony Jun

2014-01-01

Patterning of nanowires in a controllable, tunable manner is important for the fabrication of functional nanodevices. Here we present a simple approach for tunable nanowire patterning using standing surface acoustic waves (SSAW). This technique allows for the construction of large-scale nanowire arrays with well-controlled patterning geometry and spacing within 5 seconds. In this approach, SSAWs were generated by interdigital transducers (IDTs), which induced a periodic alternating current (AC) electric field on the piezoelectric substrate and consequently patterned metallic nanowires in suspension. The patterns could be deposited onto the substrate after the liquid evaporated. By controlling the distribution of the SSAW field, metallic nanowires were assembled into different patterns including parallel and perpendicular arrays. The spacing of the nanowire arrays could be tuned by controlling the frequency of the surface acoustic waves. Additionally, we observed 3D spark-shape nanowire patterns in the SSAW field. The SSAW-based nanowire-patterning technique presented here possesses several advantages over alternative patterning approaches, including high versatility, tunability, and efficiency, making it promising for device applications. PMID:23540330

Automated characterization and assembly of individual nanowires for device fabrication.

PubMed

Yu, Kaiyan; Yi, Jingang; Shan, Jerry W

2018-05-15

The automated sorting and positioning of nanowires and nanotubes is essential to enabling the scalable manufacturing of nanodevices for a variety of applications. However, two fundamental challenges still remain: (i) automated placement of individual nanostructures in precise locations, and (ii) the characterization and sorting of highly variable nanomaterials to construct well-controlled nanodevices. Here, we propose and demonstrate an integrated, electric-field based method for the simultaneous automated characterization, manipulation, and assembly of nanowires (ACMAN) with selectable electrical conductivities into nanodevices. We combine contactless and solution-based electro-orientation spectroscopy and electrophoresis-based motion-control, planning and manipulation strategies to simultaneously characterize and manipulate multiple individual nanowires. These nanowires can be selected according to their electrical characteristics and precisely positioned at different locations in a low-conductivity liquid to form functional nanodevices with desired electrical properties. We validate the ACMAN design by assembling field-effect transistors (FETs) with silicon nanowires of selected electrical conductivities. The design scheme provides a key enabling technology for the scalable, automated sorting and assembly of nanowires and nanotubes to build functional nanodevices.

Nanowire field-effect transistors for gas sensor applications

NASA Astrophysics Data System (ADS)

Constantinou, Marios

Sensing BTEX (Benzene, Ethylbenzene, Toluene, Xylene) pollutants is of utmost importance to reduce health risk and ensure public safety. The lack of sensitivity and selectivity of the current gas sensors and the limited number of available technologies in the field of BTEX-sensing raises the demand for the development of high-performance gas sensors for BTEX applications. The scope of this thesis is the fabrication and characterisation of high-quality field-effect transistors (FETs), with functionalised silicon nanowires (SiNWs), for the selective sensing of benzene vs. other BTEX gases. This research addresses three main challenges in SiNW FET-sensor device development: i) controllable and reproducible assembly of high-quality SiNWs for FET sensor devices using the method of dielectrophoresis (DEP), ii) almost complete elimination of harmful hysteresis effect in the SiNW FET current-voltage characteristics induced by surface states using DMF solvent, iii) selective sensing of benzene with up to ppb range of sensitivity using calix[4]arene-derivatives. It is experimentally demonstrated that frequency-controlled DEP is a powerful tool for the selection and collection of semiconducting SiNWs with advanced electrical and morphological properties, from a poly-disperse as-synthesised NWs. The DEP assembly method also leads to a controllable and reproducible fabrication of high-quality NW-based FETs. The results highlight the superiority of DEP, performed at high signal frequencies (5-20 MHz) to selectively assemble only high-quality NWs which can respond to such high DEP frequencies. The SiNW FETs, with NWs collected at high DEP frequencies, have high mobility (≈50 cm2 V-1 s-1), low sub-threshold-swing (≈1.26 V/decade), high on-current (up to 3 mA) and high on/off ratio (106-107). The DEP NW selection is also demonstrated using an industrially scalable method, to allow establishing of NW response characteristics to different DEP frequencies in a very short time

Optimization of pH sensing using silicon nanowire field effect transistors with HfO2 as the sensing surface.

PubMed

Zafar, Sufi; D'Emic, Christopher; Afzali, Ali; Fletcher, Benjamin; Zhu, Y; Ning, Tak

2011-10-07

Silicon nanowire field effect transistor sensors with SiO(2)/HfO(2) as the gate dielectric sensing surface are fabricated using a top down approach. These sensors are optimized for pH sensing with two key characteristics. First, the pH sensitivity is shown to be independent of buffer concentration. Second, the observed pH sensitivity is enhanced and is equal to the Nernst maximum sensitivity limit of 59 mV/pH with a corresponding subthreshold drain current change of ∼ 650%/pH. These two enhanced pH sensing characteristics are attributed to the use of HfO(2) as the sensing surface and an optimized fabrication process compatible with silicon processing technology.

Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.

PubMed

Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

2016-06-09

We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (∼6) and ultralow static power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.

Boron carbide nanowires: Synthesis and characterization

NASA Astrophysics Data System (ADS)

Guan, Zhe

Bulk boron carbide has been widely used in ballistic armored vest and the property characterization has been heavily focused on mechanical properties. Even though boron carbides have also been projected as a promising class of high temperature thermoelectric materials for energy harvesting, the research has been limited in this field. Since the thermal conductivity of bulk boron carbide is still relatively high, there is a great opportunity to take advantage of the nano effect to further reduce it for better thermoelectric performance. This dissertation work aims to explore whether improved thermoelectric performance can be found in boron carbide nanowires compared with their bulk counterparts. This dissertation work consists of four main parts. (1) Synthesis of boron carbide nanowires. Boron carbide nanowires were synthesized by co-pyrolysis of diborane and methane at low temperatures (with 879 °C as the lowest) in a home-built low pressure chemical vapor deposition (LPCVD) system. The CVD-based method is energy efficient and cost effective. The as-synthesized nanowires were characterized by electron microscopy extensively. The transmission electron microscopy (TEM) results show the nanowires are single crystalline with planar defects. Depending on the geometrical relationship between the preferred growth direction of the nanowire and the orientation of the defects, the as-synthesized nanowires could be further divided into two categories: transverse fault (TF) nanowires grow normal to the defect plane, while axial fault (AF) ones grow within the defect plane. (2) Understanding the growth mechanism of as-synthesized boron carbide nanowires. The growth mechanism can be generally considered as the famous vapor-liquid-solid (VLS) mechanism. TF and AF nanowires were found to be guided by Ni-B catalysts of two phases. A TF nanowire is lead by a hexagonal phase catalyst, which was proved to be in a liquid state during reaction. While an AF nanowires is catalyzed by a

Surface effects on the thermal conductivity of silicon nanowires

NASA Astrophysics Data System (ADS)

Li, Hai-Peng; Zhang, Rui-Qin

2018-03-01

Thermal transport in silicon nanowires (SiNWs) has recently attracted considerable attention due to their potential applications in energy harvesting and generation and thermal management. The adjustment of the thermal conductivity of SiNWs through surface effects is a topic worthy of focus. In this paper, we briefly review the recent progress made in this field through theoretical calculations and experiments. We come to the conclusion that surface engineering methods are feasible and effective methods for adjusting nanoscale thermal transport and may foster further advancements in this field. Project supported by the National Natural Science Foundation ofChina (Grant No. 11504418), China Scholarship Council (Grant No. 201706425053), Basic Research Program in Shenzhen, China (Grant No. JCYJ20160229165210666), and the Fundamental Research Funds for the Central Universities of China (Grant No. 2015XKMS075).

Thermoelectric current in topological insulator nanowires with impurities.

PubMed

Erlingsson, Sigurdur I; Bardarson, Jens H; Manolescu, Andrei

2018-01-01

In this paper we consider charge current generated by maintaining a temperature difference over a nanowire at zero voltage bias. For topological insulator nanowires in a perpendicular magnetic field the current can change sign as the temperature of one end is increased. Here we study how this thermoelectric current sign reversal depends on the magnetic field and how impurities affect the size of the thermoelectric current. We consider both scalar and magnetic impurities and show that their influence on the current are quite similar, although the magnetic impurities seem to be more effective in reducing the effect. For moderate impurity concentration the sign reversal persists.

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires.

PubMed

Yan, Jie-Yun

2018-06-13

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires is studied. Based on the excitonic theory, the numerical method to calculate the photoconductivity spectrum in the nanowires is developed, which can simulate optical pump terahertz-probe spectroscopy measurements on real nanowires and thereby calculate the typical photoconductivity spectrum. With the help of the energetic structure deduced from the calculated linear absorption spectrum, the numerically observed shift of the resonant peak in the photoconductivity spectrum is found to result from the dominant exciton transition between excited or continuum states to the ground state, and the quantitative analysis is in good agreement with the quantum plasmon model. Besides, the dependence of the photoconductivity on the polarization of the terahertz field is also discussed. The numerical method and supporting theoretical analysis provide a new tool for experimentalists to understand the terahertz photoconductivity in intrinsic semiconductor nanowires at low temperatures or for nanowires subjected to below bandgap photoexcitation, where excitonic effects dominate.

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires

NASA Astrophysics Data System (ADS)

Yan, Jie-Yun

2018-06-01

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires is studied. Based on the excitonic theory, the numerical method to calculate the photoconductivity spectrum in the nanowires is developed, which can simulate optical pump terahertz-probe spectroscopy measurements on real nanowires and thereby calculate the typical photoconductivity spectrum. With the help of the energetic structure deduced from the calculated linear absorption spectrum, the numerically observed shift of the resonant peak in the photoconductivity spectrum is found to result from the dominant exciton transition between excited or continuum states to the ground state, and the quantitative analysis is in good agreement with the quantum plasmon model. Besides, the dependence of the photoconductivity on the polarization of the terahertz field is also discussed. The numerical method and supporting theoretical analysis provide a new tool for experimentalists to understand the terahertz photoconductivity in intrinsic semiconductor nanowires at low temperatures or for nanowires subjected to below bandgap photoexcitation, where excitonic effects dominate.

Magnetic hysteresis in small-grained CoxPd1-x nanowire arrays

NASA Astrophysics Data System (ADS)

Viqueira, M. S.; Pozo-López, G.; Urreta, S. E.; Condó, A. M.; Cornejo, D. R.; Fabietti, L. M.

2015-11-01

Co-Pd nanowires with small grain size are fabricated by AC electrodeposition into hexagonally ordered alumina pores, 20-35 nm in diameter and about 1 μm long. The effects of the alloy composition, the nanowire diameter and the grain size on the hysteresis properties are considered. X-ray diffraction indicates that the nanowires are single phase, a fcc Co-Pd solid solution; electron microscopy results show that they are polycrystalline, with randomly oriented grains (7-12 nm), smaller than the wire diameter. Nanowire arrays are ferromagnetic, with an easy magnetization axis parallel to the nanowire long axis. Both, the coercive field and the loop squareness monotonously increase with the Co content and with the grain size, but no clear correlation with the wire diameter is found. The Co and Co-rich nanowire arrays exhibit coercive fields and reduced remanence values quite insensitive to temperature in the range 4 K-300 K; on the contrary, in Pd-rich nanowires both magnitudes are smaller and they largely increase during cooling below 100 K. These behaviors are systematized by considering the strong dependences displayed by the magneto-crystalline anisotropy and the saturation magnetostriction on composition and temperature. At low temperatures the effective anisotropy value and the domain-wall width to grain size ratio drastically change, promoting less cooperative and harder nucleation modes.

From immobilized cells to motile cells on a bed-of-nails: effects of vertical nanowire array density on cell behaviour

PubMed Central

Persson, Henrik; Li, Zhen; Tegenfeldt, Jonas O.; Oredsson, Stina; Prinz, Christelle N.

2015-01-01

The field of vertical nanowire array-based applications in cell biology is growing rapidly and an increasing number of applications are being explored. These applications almost invariably rely on the physical properties of the nanowire arrays, creating a need for a better understanding of how their physical properties affect cell behaviour. Here, we investigate the effects of nanowire density on cell migration, division and morphology for murine fibroblasts. Our results show that few nanowires are sufficient to immobilize cells, while a high nanowire spatial density enables a ”bed-of-nails” regime, where cells reside on top of the nanowires and are fully motile. The presence of nanowires decreases the cell proliferation rate, even in the “bed-of-nails” regime. We show that the cell morphology strongly depends on the nanowire density. Cells cultured on low (0.1 μm−2) and medium (1 μm−2) density substrates exhibit an increased number of multi-nucleated cells and micronuclei. These were not observed in cells cultured on high nanowire density substrates (4 μm−2). The results offer important guidelines to minimize cell-function perturbations on nanowire arrays. Moreover, these findings offer the possibility to tune cell proliferation and migration independently by adjusting the nanowire density, which may have applications in drug testing. PMID:26691936

Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanaka, H., E-mail: tanaka@semicon.kuee.kyoto-u.ac.jp; Morioka, N.; Mori, S.

2014-02-07

The conduction band structure and electron effective mass of GaAs nanowires with various cross-sectional shapes and orientations were calculated by two methods, a tight-binding method and an effective mass equation taking the bulk full-band structure into account. The effective mass of nanowires increases as the cross-sectional size decreases, and this increase in effective mass depends on the orientations and substrate faces of nanowires. Among [001], [110], and [111]-oriented rectangular cross-sectional GaAs nanowires, [110]-oriented nanowires with wider width along the [001] direction showed the lightest effective mass. This dependence originates from the anisotropy of the Γ valley of bulk GaAs. Themore » relationship between effective mass and bulk band structure is discussed.« less

Quasiballistic quantum transport through Ge/Si core/shell nanowires

NASA Astrophysics Data System (ADS)

Kotekar-Patil, D.; Nguyen, B.-M.; Yoo, J.; Dayeh, S. A.; Frolov, S. M.

2017-09-01

We study signatures of ballistic quantum transport of holes through Ge/Si core/shell nanowires at low temperatures. We observe Fabry-Pérot interference patterns as well as conductance plateaus at integer multiples of 2e 2/h at zero magnetic field. Magnetic field evolution of these plateaus reveals relatively large effective Landé g-factors. Ballistic effects are observed in nanowires with silicon shell thickness of 1-3 nm, but not in bare germanium wires. These findings inform the future development of spin and topological quantum devices which rely on ballistic sub-band-resolved transport.

Quasiballistic quantum transport through Ge/Si core/shell nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kotekar-Patil, D.; Nguyen, B-M; Yoo, J.

We study signatures of ballistic quantum transport of holes through Ge/Si core/shell nanowires at low temperatures. We observe Fabry–Pérot interference patterns as well as conductance plateaus at integer multiples of 2e 2/h at zero magnetic field. Magnetic field evolution of these plateaus reveals relatively large effective Landé g-factors. Ballistic effects are observed in nanowires with silicon shell thickness of 1–3 nm, but not in bare germanium wires. These findings inform the future development of spin and topological quantum devices which rely on ballistic sub-band-resolved transport.

Quasiballistic quantum transport through Ge/Si core/shell nanowires

DOE PAGES

Kotekar-Patil, D.; Nguyen, B-M; Yoo, J.; ...

2017-09-04

We study signatures of ballistic quantum transport of holes through Ge/Si core/shell nanowires at low temperatures. We observe Fabry–Pérot interference patterns as well as conductance plateaus at integer multiples of 2e 2/h at zero magnetic field. Magnetic field evolution of these plateaus reveals relatively large effective Landé g-factors. Ballistic effects are observed in nanowires with silicon shell thickness of 1–3 nm, but not in bare germanium wires. These findings inform the future development of spin and topological quantum devices which rely on ballistic sub-band-resolved transport.

Simultaneous Detection of α-Fetoprotein and Carcinoembryonic Antigen Based on Si Nanowire Field-Effect Transistors.

PubMed

Zhu, Kuiyu; Zhang, Ye; Li, Zengyao; Zhou, Fan; Feng, Kang; Dou, Huiqiang; Wang, Tong

2015-08-05

Primary hepatic carcinoma (PHC) is one of the most common malignancies worldwide, resulting in death within six to 20 months. The survival rate can be improved by effective treatments when diagnosed at an early stage. The α-fetoprotein (AFP) and carcinoembryonic antigen (CEA) have been identified as markers that are expressed at higher levels in PHC patients. In this study, we employed silicon nanowire field-effect transistors (SiNW-FETs) with polydimethylsiloxane (PDMS) microfluidic channels to simultaneously detect AFP and CEA in desalted human serum. Dual-channel PDMS was first utilized for the selective modification of AFP and CEA antibodies on SiNWs, while single-channel PDMS offers faster and more sensitive detection of AFP and CEA in serum. During the SiNW modification process, 0.1% BSA was utilized to minimize nonspecific protein binding from serum. The linear dynamic ranges for the AFP and CEA detection were measured to be 500 fg/mL to 50 ng/mL and 50 fg/mL to 10 ng/mL, respectively. Our work demonstrates the promising potential of fabricated SiNW-FETs as a direct detection kit for multiple tumor markers in serum; therefore, it provides a chance for early stage diagnose and, hence, more effective treatments for PHC patients.

Magnetoresistance effect in permalloy nanowires with various types of notches

NASA Astrophysics Data System (ADS)

Gao, Y.; You, B.; Wang, J.; Yuan, Y.; Wei, L. J.; Tu, H. Q.; Zhang, W.; Du, J.

2018-05-01

Suppressing the stochastic domain wall (DW) motion in magnetic nanowires is of great importance for designing DW-related spintronic devices. In this work, we have investigated the pinning/depinning processes of DWs in permalloy nanowires with three different types of notches by using longitudinal magnetoresistance (MR) measurement. The averaged MR curves demonstrate that the stochastic DW depinning is suppressed partly or even completely by a transversely asymmetric notch. The single-shot MR curves show that how the resistance changes with the applied field also depends strongly on the notch type while the DW is pinned around the notch. In the case of two depinning fields, larger (smaller) change of resistance always corresponds to larger (smaller) depinning field, regardless of the notch type. These phenomena can be understood by that the spin structure around the notch changes differently with the notch type when the DW is traveling through the notch.

Spark-plasma-sintering magnetic field assisted compaction of Co{sub 80}Ni{sub 20} nanowires for anisotropic ferromagnetic bulk materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ouar, Nassima; Schoenstein, Frédéric; Mercone, Silvana

We developed a two-step process showing the way for sintering anisotropic nanostructured bulk ferromagnetic materials. A new reactor has been optimized allowing the synthesis of several grams per batch of nanopowders via a polyol soft chemistry route. The feasibility of the scale-up has been successfully demonstrated for Co{sub 80}Ni{sub 20} nanowires and a massic yield of ∼97% was obtained. The thus obtained nanowires show an average diameter of ∼6 nm and a length of ∼270 nm. A new bottom-up strategy allowed us to compact the powder into a bulk nanostructured system. We used a spark-plasma-sintering technique under uniaxial compression andmore » low temperature assisted by a permanent magnetic field of 1 T. A macroscopic pellet of partially aligned nanowire arrays has been easily obtained. This showed optimized coercive properties along the direction of the magnetic field applied during compaction (i.e., the nanowires' direction)« less

Resistance modulation in VO2 nanowires induced by an electric field via air-gap gates

NASA Astrophysics Data System (ADS)

Kanki, Teruo; Chikanari, Masashi; Wei, Tingting; Tanaka, Hidekazu; The Institute of Scientific; Industrial Research Team

Vanadium dioxide (VO2) shows huge resistance change with metal-insulator transition (MIT) at around room temperature. Controlling of the MIT by applying an electric field is a topical ongoing research toward the realization of Mott transistor. In this study, we have successfully switched channel resistance of VO2 nano-wire channels by a pure electrostatic field effect using a side-gate-type field-effect transistor (SG-FET) viaair gap and found that single crystalline VO2 nanowires and the channels with narrower width enhance transport modulation rate. The rate of change in resistance ((R0-R)/R, where R0 and R is the resistance of VO2 channel with off state and on state gate voltage (VG) , respectively) was 0.42 % at VG = 30 V in in-plane poly-crystalline VO2 channels on Al2O3(0001) substrates, while the rate in single crystalline channels on TiO2 (001) substrates was 3.84 %, which was 9 times higher than that using the poly-crystalline channels. With reducing wire width from 3000 nm to 400 nm of VO2 on TiO2 (001) substrate, furthermore, resistance modulation ratio enhanced from 0.67 % to 3.84 %. This change can not be explained by a simple free-electron model. In this presentation, we will compare the electronic properties between in-plane polycrystalline VO2 on Al2O3 (0001) and single crystalline VO2 on TiO2 (001) substrates, and show experimental data in detail..

Conversion between hexagonal GaN and beta-Ga(2)O(3) nanowires and their electrical transport properties.

PubMed

Li, Jianye; An, Lei; Lu, Chenguang; Liu, Jie

2006-02-01

We have observed that the hexagonal GaN nanowires grown from a simple chemical vapor deposition method using gallium metal and ammonia gas are usually gallium-doped. By annealing in air, the gallium-doped hexagonal GaN nanowires could be completely converted to beta-Ga(2)O(3) nanowires. Annealing the beta-Ga(2)O(3) nanowires in ammonia could convert them back to undoped hexagonal GaN nanowires. Field effect transistors based on these three kinds of nanowires were fabricated, and their performances were studied. Because of gallium doping, the as-grown GaN nanowires show a weak gating effect. Through the conversion process of GaN nanowires (gallium-doped) --> Ga(2)O(3) nanowires --> GaN nanowires (undoped) via annealing, the final undoped GaN nanowires display different electrical properties than the initial gallium-doped GaN nanowires, show a pronounced n-type gating effect, and can be completely turned off.

Nonlinear Conductive Behaviour of Silver Nanowires/Silicone Rubber Composites

NASA Astrophysics Data System (ADS)

Lu, Pin; Qu, Zhaoming; Wang, Qingguo; Bai, Liyun; Zhao, Shiyang

2018-01-01

Silver nanowires with an average length of 10 μm and diameter of about 90 nm have been synthesized by polyol reduction of silver nitrate in the presence of polyvinylpyrrolidone(PVP). Silver nanowires (AgNWs)/silicone rubber (SR) composites have been made by mixing silver nanowires into silicone rubber. The nonlinear response of AgNWs/SR composites under high electric field is investigated. The nonlinear Conductive behavior of composites is considered as a competitive process of several effects. From the perspective of the microstructure of composites, the conductive path is established by the quantum tunnel effect between silver nanowires. The influence factors on the conductivity of composites are discussed and analyzed. The results show that the AgNWs/SR composites with nonlinear conductive properties are of great potential application in electromagnetic protection of electron device and system.

n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.

PubMed

Gutsche, Christoph; Lysov, Andrey; Regolin, Ingo; Blekker, Kai; Prost, Werner; Tegude, Franz-Josef

2011-12-01

In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 10(17) cm(-3) to 2 × 10(18) cm(-3). The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices.

A magneto-electro-optical effect in a plasmonic nanowire material

PubMed Central

Valente, João; Ou, Jun-Yu; Plum, Eric; Youngs, Ian J.; Zheludev, Nikolay I.

2015-01-01

Electro- and magneto-optical phenomena play key roles in photonic technology enabling light modulators, optical data storage, sensors and numerous spectroscopic techniques. Optical effects, linear and quadratic in external electric and magnetic field are widely known and comprehensively studied. However, optical phenomena that depend on the simultaneous application of external electric and magnetic fields in conventional media are barely detectable and technologically insignificant. Here we report that a large reciprocal magneto-electro-optical effect can be observed in metamaterials. In an artificial chevron nanowire structure fabricated on an elastic nano-membrane, the Lorentz force drives reversible transmission changes on application of a fraction of a volt when the structure is placed in a fraction-of-tesla magnetic field. We show that magneto-electro-optical modulation can be driven to hundreds of thousands of cycles per second promising applications in magneto-electro-optical modulators and field sensors at nano-tesla levels. PMID:25906761

Influence factors of the inter-nanowire thermal contact resistance in the stacked nanowires

NASA Astrophysics Data System (ADS)

Wu, Dongxu; Huang, Congliang; Zhong, Jinxin; Lin, Zizhen

2018-05-01

The inter-nanowire thermal contact resistance is important for tuning the thermal conductivity of a nanocomposite for thermoelectric applications. In this paper, the stacked copper nanowires are applied for studying the thermal contact resistance. The stacked copper nanowires are firstly made by the cold-pressing method, and then the nanowire stacks are treated by sintering treatment. With the effect of the volumetric fraction of nanowires in the stack and the influence of the sintering-temperature on the thermal contact resistance discussed, results show that: The thermal conductivity of the 150-nm copper nanowires can be enlarged almost 2 times with the volumetric fraction increased from 32 to 56% because of the enlarged contact-area and contact number of a copper nanowire. When the sintering temperature increases from 293 to 673 K, the thermal conductivity of the stacked 300-nm nanowires could be enlarged almost 2.5 times by the sintering treatment, because of the improved lattice property of the contact zone. In conclusion, application of a high volumetric fraction or/and a sintering-treatment are effectivity to tune the inter-nanowire thermal contact resistance, and thus to tailor the thermal conductivity of a nanowire network or stack.

Electrolyte-gated transistors based on conducting polymer nanowire junction arrays.

PubMed

Alam, Maksudul M; Wang, Jun; Guo, Yaoyao; Lee, Stephanie P; Tseng, Hsian-Rong

2005-07-07

In this study, we describe the electrolyte gating and doping effects of transistors based on conducting polymer nanowire electrode junction arrays in buffered aqueous media. Conducting polymer nanowires including polyaniline, polypyrrole, and poly(ethylenedioxythiophene) were investigated. In the presence of a positive gate bias, the device exhibits a large on/off current ratio of 978 for polyaniline nanowire-based transistors; these values vary according to the acidity of the gate medium. We attribute these efficient electrolyte gating and doping effects to the electrochemically fabricated nanostructures of conducting polymer nanowires. This study demonstrates that two-terminal devices can be easily converted into three-terminal transistors by simply immersing the device into an electrolyte solution along with a gate electrode. Here, the field-induced modulation can be applied for signal amplification to enhance the device performance.

Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion

NASA Astrophysics Data System (ADS)

Cazimajou, T.; Legallais, M.; Mouis, M.; Ternon, C.; Salem, B.; Ghibaudo, G.

2018-05-01

We studied the current-voltage characteristics of percolating networks of silicon nanowires (nanonets), operated in back-gated transistor mode, for future use as gas or biosensors. These devices featured P-type field-effect characteristics. It was found that a Lambert W function-based compact model could be used for parameter extraction of electrical parameters such as apparent low field mobility, threshold voltage and subthreshold slope ideality factor. Their variation with channel length and nanowire density was related to the change of conduction regime from direct source/drain connection by parallel nanowires to percolating channels. Experimental results could be related in part to an influence of the threshold voltage dispersion of individual nanowires.

Aqueous Phase Synthesis and Enhanced Field Emission Properties of ZnO-Sulfide Heterojunction Nanowires

PubMed Central

Wang, Guojing; Li, Zhengcao; Li, Mingyang; Chen, Chienhua; Lv, Shasha; Liao, Jiecui

2016-01-01

ZnO-CdS, ZnO-ZnS, and ZnO-Ag2S core-shell heterojunction structures were fabricated using low-temperature, facile and simple aqueous solution approaches. The polycrystalline sulfide shells effectively enhance the field emission (FE) properties of ZnO nanowires arrays (NWAs). This results from the formation of the staggered gap heterointerface (ZnO-sulfide) which could lead to an energy well at the interfaces. Hence, electrons can be collected when an electric field is applied. It is observed that ZnO-ZnS NWAs have the lowest turn-on field (3.0 Vμm−1), compared with ZnO-CdS NWAs (6.3 Vμm−1) and ZnO-Ag2S NWAs (5.0 Vμm−1). This may be associated with the pyramid-like ZnS shell which increases the number of emission nanotips. Moreover, the Fowler-Nordheim (F-N) plot displays a nonlinear relationship in the low and high electric field regions caused by the double well potential effect of the heterojunction structures. PMID:27387653

Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires.

PubMed

Liu, Xingqiang; Yang, Xiaonian; Gao, Guoyun; Yang, Zhenyu; Liu, Haitao; Li, Qiang; Lou, Zheng; Shen, Guozhen; Liao, Lei; Pan, Caofeng; Lin Wang, Zhong

2016-08-23

We report high-performance self-aligned MoS2 field-effect transistors (FETs) with enhanced photoresponsivity by the piezo-phototronic effect. The FETs are fabricated based on monolayer MoS2 with a piezoelectric GaN nanowire (NW) as the local gate, and a self-aligned process is employed to define the source/drain electrodes. The fabrication method allows the preservation of the intrinsic property of MoS2 and suppresses the scattering center density in the MoS2/GaN interface, which results in high electrical and photoelectric performances. MoS2 FETs with channel lengths of ∼200 nm have been fabricated with a small subthreshold slope of 64 mV/dec. The photoresponsivity is 443.3 A·W(-1), with a fast response and recovery time of ∼5 ms under 550 nm light illumination. When strain is introduced into the GaN NW, the photoresponsivity is further enhanced to 734.5 A·W(-1) and maintains consistent response and recovery time, which is comparable with that of the mechanical exfoliation of MoS2 transistors. The approach presented here opens an avenue to high-performance top-gated piezo-enhanced MoS2 photodetectors.

Fabrication and surface enhanced Raman scattering effect of centimeter level AgCuAu composite nanowires

NASA Astrophysics Data System (ADS)

Xu, Dapeng; Zhang, Song; Yang, Wei; Chen, Jian

2017-10-01

Centimeter level AgCuAu composite nanowires were prepared by a solid-state ionics method under a direct current electric field (DCEF) using fast ionic conductor RbAg4I5 films and vacuum thermal evaporation method. The surface morphology and chemical composition of the AuAgCu composite nanowires were characterized by scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS), respectively. Raman enhancement performance of the AgCuAu composite nanowires substrates was detected by Rhodamine 6G (R6G) aqueous solutions as probe molecules. Long-range order and short-range order AgCuAu composite nanowires with the length of 1 cm were prepared. The nanowires were bamboo-shaped with high surface roughness and the diameters of nanowires ranged from 60 to 100 nm. The molar ratio of Ag:Cu:Au in composite nanowires is 15:2:1. The intrinsic Raman peaks of 10-16 mol/L R6G at 612, 773, 1125, 1182, 1307, 1361, 1418, 1506, 1545, 1575, 1597, 1650 cm-1 are all present when AgCuAu composite nanowires were used as the SERS substrates.

Preparation and electrical properties of electrospun tin-doped indium oxide nanowires

NASA Astrophysics Data System (ADS)

Lin, Dandan; Wu, Hui; Zhang, Rui; Pan, Wei

2007-11-01

Well-aligned tin-doped indium (ITO) nanowires have been prepared using the electrospinning process. The Sn doping mechanism and microstructure have been characterized by x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). Devices for I-V measurement and field-effect transistors (FETs) were assembled using ITO nanowires with top contact configurations. The effect of Sn doping on the electrical conductivity was significant in that it enhanced the conductance by over 107 times, up to ~1 S cm-1 for ITO nanowires with an Sn content of 17.5 at.%. The nanowire FETs were operated in the depletion mode with an electron mobility of up to 0.45 cm2 V-1 s-1 and an on/off ratio of 103.

Effects of Asymmetric Local Joule Heating on Silicon Nanowire-Based Devices Formed by Dielectrophoresis Alignment Across Pt Electrodes

NASA Astrophysics Data System (ADS)

Ho, Hsiang-Hsi; Lin, Chun-Lung; Tsai, Wei-Che; Hong, Liang-Zheng; Lyu, Cheng-Han; Hsu, Hsun-Feng

2018-01-01

We demonstrate the fabrication and characterization of silicon nanowire-based devices in metal-nanowire-metal configuration using direct current dielectrophoresis. The current-voltage characteristics of the devices were found rectifying, and their direction of rectification could be determined by voltage sweep direction due to the asymmetric Joule heating effect that occurred in the electrical measurement process. The photosensing properties of the rectifying devices were investigated. It reveals that when the rectifying device was in reverse-biased mode, the excellent photoresponse was achieved due to the strong built-in electric field at the junction interface. It is expected that rectifying silicon nanowire-based devices through this novel and facile method can be potentially applied to other applications such as logic gates and sensors.

Electron transport in zinc-blende wurtzite biphasic gallium nitride nanowires and GaNFETs

DOE PAGES

Jacobs, Benjamin W.; Ayres, Virginia M.; Stallcup, Richard E.; ...

2007-10-19

Two-point and four-point probe electrical measurements of a biphasic gallium nitride nanowire and current–voltage characteristics of a gallium nitride nanowire based field effect transistor are reported. The biphasic gallium nitride nanowires have a crystalline homostructure consisting of wurtzite and zinc-blende phases that grow simultaneously in the longitudinal direction. There is a sharp transition of one to a few atomic layers between each phase. Here, all measurements showed high current densities. Evidence of single-phase current transport in the biphasic nanowire structure is discussed.

Magnetic nanorings and manipulation of nanowires

NASA Astrophysics Data System (ADS)

Chien, C. L.

2006-03-01

The properties of nanoscale entities, such as nanorings and nanowires, and the response of such entities to external fields are dictated by their geometrical shapes and sizes, which can be manipulated by fabrication. We have developed a method for fabricating a large number of nanorings (10^10) of different sizes in the range of 100 nm and ring cross sections. During magnetic reversal, both the vortex state and the rotating onion state appear with different proportions, which depend on the ring diameter, ring cross section, and the profile of the ring cross section. In the case of nanowires in suspension, the large aspect ratio of the nanowires can be exploited for manipulation despite extremely small Reynolds numbers of 10-5. Using AC electric field applied to microelectrodes, both magnetic and non-magnetic nanowires can be efficiently assembled into desired patterns. We also demonstrate rotation of nanowires with precisely controlled rotation speed and chirality, as well as an electrically driven nanowire micromotor a few in size. In collaboration with F. Q. Zhu, D. L. Fan, O. Tchernyshyov, R. C. Cammarata (Johns Hopkins University) and X. C. Zhu and J. G. Zhu (Carnegie-Mellon University).

Terahertz time-domain measurement of non-Drude conductivity in silver nanowire thin films for transparent electrode applications

NASA Astrophysics Data System (ADS)

Kim, Jaeseok; Maeng, Inhee; Jung, Jongwook; Song, Hyunjoon; Son, Joo-Hiuk; Kim, Kilsuk; Lee, Jaeik; Kim, Chul-Hong; Chae, Geesung; Jun, Myungchul; Hwang, YongKee; Jeong Lee, Su; Myoung, Jae-Min; Choi, Hyunyong

2013-01-01

We have investigated the complex conductivity of silver nanowire thin films using terahertz time-domain spectroscopy. Maxwell-Garnett effective medium theory, which accounts for the effective complex conductivity of silver nanowires, is presented in detail theoretically and experimentally. The conductivity of nanowires exhibits a characteristic non-Drude response in which the applied terahertz field is polarized in the longitudinal nanowire direction. The non-Drude responses of the silver nanowires are explained by the Gans approximation and the Drude-Smith model, and both agree well with the experimental data. Our results provide a basis for further explorations of charge carrier dynamics in nanowire-based transparent electrode applications.

Template-Assisted Scalable Nanowire Networks.

PubMed

Friedl, Martin; Cerveny, Kris; Weigele, Pirmin; Tütüncüoglu, Gozde; Martí-Sánchez, Sara; Huang, Chunyi; Patlatiuk, Taras; Potts, Heidi; Sun, Zhiyuan; Hill, Megan O; Güniat, Lucas; Kim, Wonjong; Zamani, Mahdi; Dubrovskii, Vladimir G; Arbiol, Jordi; Lauhon, Lincoln J; Zumbühl, Dominik M; Fontcuberta I Morral, Anna

2018-04-11

Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of qubits, though branched nanowires are needed to perform qubit manipulations. Here we report a gold-free templated growth of III-V nanowires by molecular beam epitaxy using an approach that enables patternable and highly regular branched nanowire arrays on a far greater scale than what has been reported thus far. Our approach relies on the lattice-mismatched growth of InAs on top of defect-free GaAs nanomembranes yielding laterally oriented, low-defect InAs and InGaAs nanowires whose shapes are determined by surface and strain energy minimization. By controlling nanomembrane width and growth time, we demonstrate the formation of compositionally graded nanowires with cross-sections less than 50 nm. Scaling the nanowires below 20 nm leads to the formation of homogeneous InGaAs nanowires, which exhibit phase-coherent, quasi-1D quantum transport as shown by magnetoconductance measurements. These results are an important advance toward scalable topological quantum computing.

Semiconductor Nanowires and Nanotubes for Energy Conversion

NASA Astrophysics Data System (ADS)

Fardy, Melissa Anne

Se nanowires allowed their thermoelectric properties to be controllably tuned by increasing their carrier concentration or hole mobility. After optimal annealing, single PbSe nanowires exhibited a thermoelectric figure of merit (ZT) of 0.12 at 300 K. In addition, using a field-effect gated device, the Seebeck coefficient of single PbSe nanowires could be tuned from 64 to 193 muV˙K-1. This direct electrical field control of the electrical conductivity and Seebeck coefficient suggests a powerful strategy for optimizing ZT in thermoelectric devices and these results represent the first demonstration of field-effect modulation of the thermoelectric figure of merit in a single semiconductor nanowire. This novel strategy for thermoelectric property modulation could prove especially important in optimizing the thermoelectric properties of semiconductors where reproducible doping is difficult to achieve. Recent theoretical work has shown large enhancements in ZT for single-crystal nanowires containing nanoscale interfaces along their lengths. M2O3(ZnO) n ( M = In, Ga, Fe) superlattice nanowires were synthesized via a novel solid-state diffusion approach to investigate this possible enhancement. Using atomic resolution Z-contrast STEM imaging a detailed structural analysis was performed on In2-xGaxO3(ZnO) n nanowires, leading to the discovery that octahedral inclusions within the superlattice structure are likely generated through a defect-assisted process. Single-nanowire thermal and electrical measurements on In2-x GaxO3(ZnO)n reveal a simultaneous improvement in all contributing factors to the thermoelectric figure of merit, giving an order of magnitude enhancement over similar bulk materials at room temperature. This is the first report of enhancement of all three thermoelectric parameters (Seebeck coefficient, electrical conductivity, and thermal resistivity) for a nanowire system. Photoelectrochemical water splitting is another exciting renewable energy application that can

Modulation of thermal conductivity in kinked silicon nanowires: phonon interchanging and pinching effects.

PubMed

Jiang, Jin-Wu; Yang, Nuo; Wang, Bing-Shen; Rabczuk, Timon

2013-04-10

We perform molecular dynamics simulations to investigate the reduction of the thermal conductivity by kinks in silicon nanowires. The reduction percentage can be as high as 70% at room temperature. The temperature dependence of the reduction is also calculated. By calculating phonon polarization vectors, two mechanisms are found to be responsible for the reduced thermal conductivity: (1) the interchanging effect between the longitudinal and transverse phonon modes and (2) the pinching effect, that is, a new type of localization, for the twisting and transverse phonon modes in the kinked silicon nanowires. Our work demonstrates that the phonon interchanging and pinching effects, induced by kinking, are brand-new and effective ways in modulating heat transfer in nanowires, which enables the kinked silicon nanowires to be a promising candidate for thermoelectric materials.

Effect of orientation on deformation behavior of Fe nanowires: A molecular dynamics study

NASA Astrophysics Data System (ADS)

Sainath, G.; Srinivasan, V. S.; Choudhary, B. K.; Mathew, M. D.; Jayakumar, T.

2014-04-01

Molecular dynamics simulations have been carried out to study the effect of crystal orientation on tensile deformation behaviour of single crystal BCC Fe nanowires at 10 K. Two nanowires with an initial orientation of <100>/{100} and <110>/{111} have been chosen for this study. The simulation results show that the deformation mechanisms varied with crystal orientation. The nanowire with an initial orientation of <100>/{100} deforms predominantly by twinning mechanism, whereas the nanowire oriented in <110>/{111}, deforms by dislocation plasticity. In addition, the single crystal oriented in <110>/{111} shows higher strength and elastic modulus than <100>/{100} oriented nanowire.

Large exchange-dominated domain wall velocities in antiferromagnetically coupled nanowires

NASA Astrophysics Data System (ADS)

Kuteifan, Majd; Lubarda, M. V.; Fu, S.; Chang, R.; Escobar, M. A.; Mangin, S.; Fullerton, E. E.; Lomakin, V.

2016-04-01

Magnetic nanowires supporting field- and current-driven domain wall motion are envisioned for methods of information storage and processing. A major obstacle for their practical use is the domain-wall velocity, which is traditionally limited for low fields and currents due to the Walker breakdown occurring when the driving component reaches a critical threshold value. We show through numerical and analytical modeling that the Walker breakdown limit can be extended or completely eliminated in antiferromagnetically coupled magnetic nanowires. These coupled nanowires allow for large domain-wall velocities driven by field and/or current as compared to conventional nanowires.

Angular dependence of switching behaviour in template released isolated NiFe nanowires

NASA Astrophysics Data System (ADS)

Sultan, Musaab Salman

2017-12-01

In this article, the magnetisation behaviour and magnetisation reversal process of both single and bundles of 3 and 7 closely-packed template released Ni60Fe40 nanowires were investigated using high-sensitivity Magneto-Optical Kerr Effect (MOKE) magnetometry. The nanowires were deposited from a dilute suspension onto gold pre-patterned silicon substrates. They were typically 9 μm in length with a diameter of approximately 200 nm. By increasing the number of clumped wires a reduction in the switching field was observed, suggesting that overall the bundle behaves like a single system and decreasing the effective external field required to switch the magnetisation. Square hysteresis loops with a sharp jump in the Kerr signal were seen for all MOKE measurement angles. This result may reflect the surface magnetisation of the nanowire, compared to their bulk behaviour as compared with the literature that adopted the same and different investigative techniques on comparable compositions and dimensions of wires. The influence of applying the magnetic field at different angles with respect to the long axis of the nanowire on the switching behaviour was analysed and compared with the theoretical calculations of non-uniform rotation of the curling model of domain reversal. An agreement and disagreement with this model was seen, respectively, for low and high angles, indicating the complexity of the magnetic state of such isolated nanowires. To confirm the results presented here, further studies are recommended using a combination of techniques sensitive to surface and bulk magnetisation on similar isolated ferromagnetic nanowires.

Reversal of Thermoelectric Current in Tubular Nanowires

NASA Astrophysics Data System (ADS)

Erlingsson, Sigurdur I.; Manolescu, Andrei; Nemnes, George Alexandru; Bardarson, Jens H.; Sanchez, David

2017-07-01

We calculate the charge current generated by a temperature bias between the two ends of a tubular nanowire. We show that in the presence of a transversal magnetic field the current can change sign; i.e., electrons can either flow from the hot to the cold reservoir, or in the opposite direction, when the temperature bias increases. This behavior occurs when the magnetic field is sufficiently strong, such that Landau and snaking states are created, and the energy dispersion is nonmonotonic with respect to the longitudinal wave vector. The sign reversal can survive in the presence of impurities. We predict this result for core-shell nanowires, for uniform nanowires with surface states due to the Fermi level pinning, and for topological insulator nanowires.

Photoresponse and Field Effect Transport Studies in InAsP-InP Core-Shell Nanowires

NASA Astrophysics Data System (ADS)

Lee, Rochelle; Jo, Min Hyeok; Kim, TaeWan; Kim, Hyo Jin; Kim, Doo Gun; Shin, Jae Cheol

2018-05-01

A ternary InAsyP1-y alloy is suitable for an application to near-infrared (NIR) optical devices as their direct bandgap energy covers the entire NIR band. A nanowire (NW) system allows an epitaxial integration of InAsyP1-y alloy on any type of substrate since the lattice mismatch strain can be relieved through the NW sidewall. Nevertheless, the very large surface to volume ratio feature of the NWs leads to enormous surface states which are susceptible to surface recombination of free carriers. Here, ternary InAs0.75P0.25 NWs are grown with InP passivation layer (i.e., core-shell structure) to minimize the influence of the surface states, thus increasing their optical and electrical properties. A photoresponse study was achieved through the modeled band structure of the grown NWs. The model and experimental results suggest that 5-nm-thick InP shell efficiently passivates the surface states of the InAs0.75P0.25 NWs. The fabricated core-shell photodetectors and field-effect transistors exhibit improved photoresponse and transport properties compared to its counterpart core-only structure.

Photoresponse and Field Effect Transport Studies in InAsP-InP Core-Shell Nanowires

NASA Astrophysics Data System (ADS)

Lee, Rochelle; Jo, Min Hyeok; Kim, TaeWan; Kim, Hyo Jin; Kim, Doo Gun; Shin, Jae Cheol

2018-03-01

A ternary InAsyP1-y alloy is suitable for an application to near-infrared (NIR) optical devices as their direct bandgap energy covers the entire NIR band. A nanowire (NW) system allows an epitaxial integration of InAsyP1-y alloy on any type of substrate since the lattice mismatch strain can be relieved through the NW sidewall. Nevertheless, the very large surface to volume ratio feature of the NWs leads to enormous surface states which are susceptible to surface recombination of free carriers. Here, ternary InAs0.75P0.25 NWs are grown with InP passivation layer (i.e., core-shell structure) to minimize the influence of the surface states, thus increasing their optical and electrical properties. A photoresponse study was achieved through the modeled band structure of the grown NWs. The model and experimental results suggest that 5-nm-thick InP shell efficiently passivates the surface states of the InAs0.75P0.25 NWs. The fabricated core-shell photodetectors and field-effect transistors exhibit improved photoresponse and transport properties compared to its counterpart core-only structure.

Electrical probing of field-driven cascading quantized transitions of skyrmion cluster states in MnSi nanowires

NASA Astrophysics Data System (ADS)

Du, Haifeng; Liang, Dong; Jin, Chiming; Kong, Lingyao; Stolt, Matthew J.; Ning, Wei; Yang, Jiyong; Xing, Ying; Wang, Jian; Che, Renchao; Zang, Jiadong; Jin, Song; Zhang, Yuheng; Tian, Mingliang

2015-07-01

Magnetic skyrmions are topologically stable whirlpool-like spin textures that offer great promise as information carriers for future spintronic devices. To enable such applications, particular attention has been focused on the properties of skyrmions in highly confined geometries such as one-dimensional nanowires. Hitherto, it is still experimentally unclear what happens when the width of the nanowire is comparable to that of a single skyrmion. Here, we achieve this by measuring the magnetoresistance in ultra-narrow MnSi nanowires. We observe quantized jumps in magnetoresistance versus magnetic field curves. By tracking the size dependence of the jump number, we infer that skyrmions are assembled into cluster states with a tunable number of skyrmions, in agreement with the Monte Carlo simulations. Our results enable an electric reading of the number of skyrmions in the cluster states, thus laying a solid foundation to realize skyrmion-based memory devices.

Deep ultraviolet laser direct write for patterning sol-gel InGaZnO semiconducting micro/nanowires and improving field-effect mobility

PubMed Central

Lin, Hung-Cheng; Stehlin, Fabrice; Soppera, Olivier; Zan, Hsiao-Wen; Li, Chang-Hung; Wieder, Fernand; Ponche, Arnaud; Berling, Dominique; Yeh, Bo-Hung; Wang, Kuan-Hsun

2015-01-01

Deep-UV (DUV) laser was used to directly write indium-gallium-zinc-oxide (IGZO) precursor solution and form micro and nanoscale patterns. The directional DUV laser beam avoids the substrate heating and suppresses the diffraction effect. A IGZO precursor solution was also developed to fulfill the requirements for direct photopatterning and for achieving semi-conducting properties with thermal annealing at moderate temperature. The DUV-induced crosslinking of the starting material allows direct write of semi-conducting channels in thin-film transistors but also it improves the field-effect mobility and surface roughness. Material analysis has been carried out by XPS, FTIR, spectroscopic ellipsometry and AFM and the effect of DUV on the final material structure is discussed. The DUV irradiation step results in photolysis and a partial condensation of the inorganic network that freezes the sol-gel layer in a homogeneous distribution, lowering possibilities of thermally induced reorganization at the atomic scale. Laser irradiation allows high-resolution photopatterning and high-enough field-effect mobility, which enables the easy fabrication of oxide nanowires for applications in solar cell, display, flexible electronics, and biomedical sensors. PMID:26014902

Effects of temperature, loading rate and nanowire length on torsional deformation and mechanical properties of aluminium nanowires investigated using molecular dynamics simulation

NASA Astrophysics Data System (ADS)

Sung, Po-Hsien; Wu, Cheng-Da; Fang, Te-Hua

2012-05-01

Single-crystal aluminium nanowires under torsion are studied using molecular dynamics simulations based on the many-body tight-binding potential. The effects of temperature, loading rate and nanowire length are evaluated in terms of atomic trajectories, potential energy, von Mises stress, a centrosymmetry parameter, torque, shear modulus and radial distribution function. Simulation results clearly show that torsional deformation begins at the surface, extends close to the two ends and finally diffuses to the middle part. The critical torsional angle which represents the beginning of plastic deformation varies with different conditions. Before the critical torsional angle is reached, the potential energy and the torque required for the deformation of a nanowire significantly increase with the torsional angle. The critical torsional angle increases with increasing nanowire length and loading rate and decreasing temperature. The torque required for the deformation decreases and the shear modulus increases with increasing nanowire length. For higher temperatures and higher loading rates, torsional buckling more easily occurs at the two ends of a nanowire, whereas it occurs towards the middle part at or below room temperature with lower loading rates. Geometry instability occurs before material instability (buckling) for a long nanowire.

Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors

NASA Astrophysics Data System (ADS)

Weber, Walter M.; Mikolajick, Thomas

2017-06-01

Research in the field of electronics of 1D group-IV semiconductor structures has attracted increasing attention over the past 15 years. The exceptional combination of the unique 1D electronic transport properties with the mature material know-how of highly integrated silicon and germanium technology holds the promise of enhancing state-of-the-art electronics. In addition of providing conduction channels that can bring conventional field effect transistors to the uttermost scaling limits, the physics of 1D group IV nanowires endows new device principles. Such unconventional silicon and germanium nanowire devices are contenders for beyond complementary metal oxide semiconductor (CMOS) computing by virtue of their distinct switching behavior and higher expressive value. This review conveys to the reader a systematic recapitulation and analysis of the physics of silicon and germanium nanowires and the most relevant CMOS and CMOS-like devices built from silicon and germanium nanowires, including inversion mode, junctionless, steep-slope, quantum well and reconfigurable transistors.

The concentration effect of capping agent for synthesis of silver nanowire by using the polyol method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Jian-Yang; Hsueh, Yu-Lee; Huang, Jung-Jie, E-mail: jjhuang@mdu.edu.tw

2014-06-01

Silver nanowires were synthesized by the polyol method employing ethylene glycol, Poly(N-vinylpyrrolidone) (PVP) and silver nitrate (AgNO{sub 3}) as the precursors. Most of the studies used metal salts (PtCl{sub 2}, NaCl) as seed precursor to synthesize the silver nanowires. In the study, the metal salts were not used and the concentration of capping agent was changed to observe the aspect ratio of silver nanowires. The experimental results showed that controlling synthesis temperature, Poly(N-vinylpyrrolidone) (PVP) molecular weight, reactant concentrations, and addition rates of AgNO{sub 3} affects the growth characteristics of silver nanowires. Field-emission scanning electron microscopy, UV–vis spectrophotometry, and X-ray diffractometrymore » were employed to characterize the silver nanowires. As increasing the concentration of PVP, the silver nanowire diameter widened and resulted in a smaller aspect ratio. We successfully prepared silver nanowires (diameter: 170 nm, length: 20 μm). The silver nanowire thin film suspension showed high transmittance, low sheet resistance, and may be used for transparent conductive film applications. - Graphical abstract: The FE-SEM image shows that nanostructures with considerable quantities of silver nanowires can also be produced when the PVP (Mw=360 K)/AgNO{sub 3} molar ratio was 2.5. - Highlights: • The polyol method was used to synthesize of silver nanowire. • The metal seed precursors were not used before synthesizing the silver nanowires. • The silver nanowire diameter and length was 170 nm and 20 μm, respectively. • Silver nanowire film with high transmittance (>85%) and low sheet resistance (<110 Ω/sq)« less

Nanowire Thermoelectric Devices

NASA Technical Reports Server (NTRS)

Borshchevsky, Alexander; Fleurial, Jean-Pierre; Herman, Jennifer; Ryan, Margaret

2005-01-01

Nanowire thermoelectric devices, now under development, are intended to take miniaturization a step beyond the prior state of the art to exploit the potential advantages afforded by shrinking some device features to approximately molecular dimensions (of the order of 10 nm). The development of nanowire-based thermoelectric devices could lead to novel power-generating, cooling, and sensing devices that operate at relatively low currents and high voltages. Recent work on the theory of thermoelectric devices has led to the expectation that the performance of such a device could be enhanced if the diameter of the wires could be reduced to a point where quantum confinement effects increase charge-carrier mobility (thereby increasing the Seebeck coefficient) and reduce thermal conductivity. In addition, even in the absence of these effects, the large aspect ratios (length of the order of tens of microns diameter of the order of tens of nanometers) of nanowires would be conducive to the maintenance of large temperature differences at small heat fluxes. The predicted net effect of reducing diameters to the order of tens of nanometers would be to increase its efficiency by a factor of .3. Nanowires made of thermoelectric materials and devices that comprise arrays of such nanowires can be fabricated by electrochemical growth of the thermoelectric materials in templates that contain suitably dimensioned pores (10 to 100 nm in diameter and 1 to 100 microns long). The nanowires can then be contacted in bundles to form devices that look similar to conventional thermoelectric devices, except that a production version may contain nearly a billion elements (wires) per square centimeter, instead of fewer than a hundred as in a conventional bulk thermoelectric device or fewer than 100,000 as in a microdevice. It is not yet possible to form contacts with individual nanowires. Therefore, in fabricating a nanowire thermoelectric device, one forms contacts on nanowires in bundles of the

Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth on MBE nanowires.

PubMed

Sanders, Aric; Blanchard, Paul; Bertness, Kris; Brubaker, Matthew; Dodson, Christopher; Harvey, Todd; Herrero, Andrew; Rourke, Devin; Schlager, John; Sanford, Norman; Chiaramonti, Ann N; Davydov, Albert; Motayed, Abhishek; Tsvetkov, Denis

2011-11-18

We present the homoepitaxial growth of p-type, magnesium doped gallium nitride shells by use of halide vapor phase epitaxy (HVPE) on n-type gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy (MBE). Scanning electron microscopy shows clear dopant contrast between the core and shell of the nanowire. The growth of magnesium doped nanowire shells shows little or no effect on the lattice parameters of the underlying nanowires, as measured by x-ray diffraction (XRD). Photoluminescence measurements of the nanowires show the appearance of sub-bandgap features in the blue and the ultraviolet, indicating the presence of acceptors. Finally, electrical measurements confirm the presence of electrically active holes in the nanowires.

Nano-soldering of magnetically aligned three-dimensional nanowire networks.

PubMed

Gao, Fan; Gu, Zhiyong

2010-03-19

It is extremely challenging to fabricate 3D integrated nanostructures and hybrid nanoelectronic devices. In this paper, we report a simple and efficient method to simultaneously assemble and solder nanowires into ordered 3D and electrically conductive nanowire networks. Nano-solders such as tin were fabricated onto both ends of multi-segmented nanowires by a template-assisted electrodeposition method. These nanowires were then self-assembled and soldered into large-scale 3D network structures by magnetic field assisted assembly in a liquid medium with a high boiling point. The formation of junctions/interconnects between the nanowires and the scale of the assembly were dependent on the solder reflow temperature and the strength of the magnetic field. The size of the assembled nanowire networks ranged from tens of microns to millimeters. The electrical characteristics of the 3D nanowire networks were measured by regular current-voltage (I-V) measurements using a probe station with micropositioners. Nano-solders, when combined with assembling techniques, can be used to efficiently connect and join nanowires with low contact resistance, which are very well suited for sensor integration as well as nanoelectronic device fabrication.

Surface effect on resonant properties of nanowires predicted by an elastic theory for nanomaterials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yao, Yin; Chen, Shaohua, E-mail: chenshaohua72@hotmail.com, E-mail: shchen@LNM.imech.ac.cn

2015-07-28

A recently developed continuum theory considering surface effect in nanomaterials is adopted to investigate the resonant properties of nanowires with different boundary conditions in the present paper. The main feature of the adopted theory is that the surface effect in nanomaterials is characterized by the surface energy density of the corresponding bulk materials and the surface relaxation parameter in nanoscale. Based on a fixed-fixed beam model and a cantilever one, the governing equation of resonant frequency for corresponding nanowires is obtained. Numerical calculation of the fundamental resonant frequency is carried out, the result of which is well consistent with themore » existing numerical ones. Comparing to the result predicted by the conventionally structural dynamics, the resonant frequency of a fixed-fixed nanowire is improved, while that of a cantilever nanowire is weakened due to the surface effect. Both a decreasing characteristic size (height or diameter) and an increasing aspect ratio could further enhance the varying trend of resonant properties for both kinds of nanowires. The present result should be helpful for the design of nano-devices and nanostructures related to nanowires.« less

Surface physics of semiconducting nanowires

NASA Astrophysics Data System (ADS)

Amato, Michele; Rurali, Riccardo

2016-02-01

Semiconducting nanowires (NWs) are firm candidates for novel nanoelectronic devices and a fruitful playground for fundamental physics. Ultra-thin nanowires, with diameters below 10 nm, present exotic quantum effects due to the confinement of the wave functions, e.g. widening of the electronic band-gap, deepening of the dopant states. However, although several reports of sub-10 nm wires exist to date, the most common NWs have diameters that range from 20 to 200 nm, where these quantum effects are absent or play a very minor role. Yet, the research activity on this field is very intense and these materials still promise to provide an important paradigm shift for the design of emerging electronic devices and different kinds of applications. A legitimate question is then: what makes a nanowire different from bulk systems? The answer is certainly the large surface-to-volume ratio. In this article we discuss the most salient features of surface physics and chemistry in group-IV semiconducting nanowires, focusing mostly on Si NWs. First we review the state-of-the-art of NW growth to achieve a smooth and controlled surface morphology. Next we discuss the importance of a proper surface passivation and its role on the NW electronic properties. Finally, stressing the importance of a large surface-to-volume ratio and emphasizing the fact that in a NW the surface is where most of the action takes place, we discuss molecular sensing and molecular doping.

Modeling and estimation of process-induced stress in the nanowire field-effect-transistors (NW-FETs) on Insulator-on-Silicon substrates with high-k gate-dielectrics

NASA Astrophysics Data System (ADS)

Chatterjee, Sulagna; Chattopadhyay, Sanatan

2016-10-01

An analytical model including the simultaneous impact of lattice and thermo-elastic constant mismatch-induced stress in nanowires on Insulator-on-Silicon substrate is developed. It is used to calibrate the finite-element based software, ANSYS, which is subsequently employed to estimate process-induced stress in the sequential steps of NW-FET fabrication. The model considers crystal structures and orientations for both the nanowires and substrates. In-plane stress components along nanowire-axis are estimated for different radii and fractions of insertion. Nature of longitudinal stress is observed to change when inserted fraction of nanowires is changed. Effect of various high-k gate-dielectrics is also investigated. A longitudinal tensile stress of 2.4 GPa and compressive stress of 1.89 GPa have been obtained for NW-FETs with 1/4th and 3/4th insertions with La2O3 and TiO2 as the gate-dielectrics, respectively. Therefore, it is possible to achieve comparable values of electron and hole mobility in NW-FETs by judiciously choosing gate-dielectrics and fractional insertion of the nanowires.

Ingestion of gallium phosphide nanowires has no adverse effect on Drosophila tissue function.

PubMed

Adolfsson, Karl; Schneider, Martina; Hammarin, Greger; Häcker, Udo; Prinz, Christelle N

2013-07-19

Engineered nanoparticles have been under increasing scrutiny in recent years. High aspect ratio nanoparticles such as carbon nanotubes and nanowires have raised safety concerns due to their geometrical similarity to asbestos fibers. III-V epitaxial semiconductor nanowires are expected to be utilized in devices such as LEDs and solar cells and will thus be available to the public. In addition, clean-room staff fabricating and characterizing the nanowires are at risk of exposure, emphasizing the importance of investigating their possible toxicity. Here we investigated the effects of gallium phosphide nanowires on the fruit fly Drosophila melanogaster. Drosophila larvae and/or adults were exposed to gallium phosphide nanowires by ingestion with food. The toxicity and tissue interaction of the nanowires was evaluated by investigating tissue distribution, activation of immune response, genome-wide gene expression, life span, fecundity and somatic mutation rates. Our results show that gallium phosphide nanowires applied through the diet are not taken up into Drosophila tissues, do not elicit a measurable immune response or changes in genome-wide gene expression and do not significantly affect life span or somatic mutation rate.

Ingestion of gallium phosphide nanowires has no adverse effect on Drosophila tissue function

NASA Astrophysics Data System (ADS)

Adolfsson, Karl; Schneider, Martina; Hammarin, Greger; Häcker, Udo; Prinz, Christelle N.

2013-07-01

Engineered nanoparticles have been under increasing scrutiny in recent years. High aspect ratio nanoparticles such as carbon nanotubes and nanowires have raised safety concerns due to their geometrical similarity to asbestos fibers. III-V epitaxial semiconductor nanowires are expected to be utilized in devices such as LEDs and solar cells and will thus be available to the public. In addition, clean-room staff fabricating and characterizing the nanowires are at risk of exposure, emphasizing the importance of investigating their possible toxicity. Here we investigated the effects of gallium phosphide nanowires on the fruit fly Drosophila melanogaster. Drosophila larvae and/or adults were exposed to gallium phosphide nanowires by ingestion with food. The toxicity and tissue interaction of the nanowires was evaluated by investigating tissue distribution, activation of immune response, genome-wide gene expression, life span, fecundity and somatic mutation rates. Our results show that gallium phosphide nanowires applied through the diet are not taken up into Drosophila tissues, do not elicit a measurable immune response or changes in genome-wide gene expression and do not significantly affect life span or somatic mutation rate.

Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires.

PubMed

Ozdemir, Baris; Kulakci, Mustafa; Turan, Rasit; Unalan, Husnu Emrah

2011-04-15

Vertically aligned silicon nanowire (Si NW) arrays have been fabricated over large areas using an electroless etching (EE) method, which involves etching of silicon wafers in a silver nitrate and hydrofluoric acid based solution. A detailed parametric study determining the relationship between nanowire morphology and time, temperature, solution concentration and starting wafer characteristics (doping type, resistivity, crystallographic orientation) is presented. The as-fabricated Si NW arrays were analyzed by field emission scanning electron microscope (FE-SEM) and a linear dependency of nanowire length to both temperature and time was obtained and the change in the growth rate of Si NWs at increased etching durations was shown. Furthermore, the effects of EE parameters on the optical reflectivity of the Si NWs were investigated in this study. Reflectivity measurements show that the 42.8% reflectivity of the starting silicon wafer drops to 1.3%, recorded for 10 µm long Si NW arrays. The remarkable decrease in optical reflectivity indicates that Si NWs have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection.

Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires

NASA Astrophysics Data System (ADS)

Ozdemir, Baris; Kulakci, Mustafa; Turan, Rasit; Emrah Unalan, Husnu

2011-04-01

Vertically aligned silicon nanowire (Si NW) arrays have been fabricated over large areas using an electroless etching (EE) method, which involves etching of silicon wafers in a silver nitrate and hydrofluoric acid based solution. A detailed parametric study determining the relationship between nanowire morphology and time, temperature, solution concentration and starting wafer characteristics (doping type, resistivity, crystallographic orientation) is presented. The as-fabricated Si NW arrays were analyzed by field emission scanning electron microscope (FE-SEM) and a linear dependency of nanowire length to both temperature and time was obtained and the change in the growth rate of Si NWs at increased etching durations was shown. Furthermore, the effects of EE parameters on the optical reflectivity of the Si NWs were investigated in this study. Reflectivity measurements show that the 42.8% reflectivity of the starting silicon wafer drops to 1.3%, recorded for 10 µm long Si NW arrays. The remarkable decrease in optical reflectivity indicates that Si NWs have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection.

A silicon nanowire heater and thermometer

NASA Astrophysics Data System (ADS)

Zhao, Xingyan; Dan, Yaping

2017-07-01

In the thermal conductivity measurements of thermoelectric materials, heaters and thermometers made of the same semiconducting materials under test, forming a homogeneous system, will significantly simplify fabrication and integration. In this work, we demonstrate a high-performance heater and thermometer made of single silicon nanowires (SiNWs). The SiNWs are patterned out of a silicon-on-insulator wafer by CMOS-compatible fabrication processes. The electronic properties of the nanowires are characterized by four-probe and low temperature Hall effect measurements. The I-V curves of the nanowires are linear at small voltage bias. The temperature dependence of the nanowire resistance allows the nanowire to be used as a highly sensitive thermometer. At high voltage bias, the I-V curves of the nanowire become nonlinear due to the effect of Joule heating. The temperature of the nanowire heater can be accurately monitored by the nanowire itself as a thermometer.

Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires

PubMed Central

Sasaki, Tsubasa; Ueda, Hiroki; Kanki, Teruo; Tanaka, Hidekazu

2015-01-01

Reversible and drastic modulation of the transport properties in vanadium dioxide (VO2) nanowires by electric field-induced hydrogenation at room temperature was demonstrated using the nanogaps separated by humid air in field-effect transistors with planer-type gates (PG-FET). These PG-FETs allowed us to investigate behavior of revealed hydrogen intercalation and diffusion aspects with time and spatial evolutions in nanowires. These results show that air nanogaps can operate as an electrochemical reaction field, even in a gaseous atmosphere, and offer new directions to explore emerging functions for electronic and energy devices in oxides. PMID:26584679

Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes

NASA Astrophysics Data System (ADS)

Ullah, A. R.; Carrad, D. J.; Krogstrup, P.; Nygârd, J.; Micolich, A. P.

2018-02-01

Doping is a common route to reducing nanowire transistor on-resistance but it has limits. A high doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the Be doping in our GaAs nanowires is so high that traditional metal-oxide gates fail. In this regime we obtain a combination of subthreshold swing and contact resistance that surpasses the best existing p -type nanowire metal-oxide semiconductor field-effect transistors (MOSFETs). Our subthreshold swing of 75 mV/dec is within 25 % of the room-temperature thermal limit and comparable with n -InP and n -GaAs nanowire MOSFETs. Our results open a new path to extending the performance and application of nanowire transistors, and motivate further work on improved solid electrolytes for nanoscale device applications.

Near-Field Imaging of Free Carriers in ZnO Nanowires with a Scanning Probe Tip Made of Heavily Doped Germanium

NASA Astrophysics Data System (ADS)

Sakat, Emilie; Giliberti, Valeria; Bollani, Monica; Notargiacomo, Andrea; Pea, Marialilia; Finazzi, Marco; Pellegrini, Giovanni; Hugonin, Jean-Paul; Weber-Bargioni, Alexander; Melli, Mauro; Sassolini, Simone; Cabrini, Stefano; Biagioni, Paolo; Ortolani, Michele; Baldassarre, Leonetta

2017-11-01

A novel scanning probe tip made of heavily doped semiconductor is fabricated and used instead of standard gold-coated tips in infrared scattering-type near-field microscopy. Midinfrared near-field microscopy experiments are conducted on ZnO nanowires with a lateral resolution better than 100 nm, using tips made of heavily electron-doped germanium with a plasma frequency in the midinfrared (plasma wavelength of 9.5 μ m ). Nanowires embedded in a dielectric matrix are imaged at two wavelengths, 11.3 and 8.0 μ m , above and below the plasma wavelength of the tips. An opposite sign of the imaging contrasts between the nanowire and the dielectric matrix is observed at the two infrared wavelengths, indicating a clear role of the free-electron plasma in the heavily doped germanium tip in building the imaging contrast. Electromagnetic simulations with a multispherical dipole model accounting for the finite size of the tip are well consistent with the experiments. By comparison of the simulated and measured imaging contrasts, an estimate for the local free-carrier density in the investigated ZnO nanowires in the low 1019 cm-3 range is retrieved. The results are benchmarked against the scattering intensity and phase maps obtained on the same sample with a gold-coated probe tip in pseudoheterodyne detection mode.

Mapping the Coulomb Environment in Interference-Quenched Ballistic Nanowires.

PubMed

Gutstein, D; Lynall, D; Nair, S V; Savelyev, I; Blumin, M; Ercolani, D; Ruda, H E

2018-01-10

The conductance of semiconductor nanowires is strongly dependent on their electrostatic history because of the overwhelming influence of charged surface and interface states on electron confinement and scattering. We show that InAs nanowire field-effect transistor devices can be conditioned to suppress resonances that obscure quantized conduction thereby revealing as many as six sub-bands in the conductance spectra as the Fermi-level is swept across the sub-band energies. The energy level spectra extracted from conductance, coupled with detailed modeling shows the significance of the interface state charge distribution revealing the Coulomb landscape of the nanowire device. Inclusion of self-consistent Coulomb potentials, the measured geometrical shape of the nanowire, the gate geometry and nonparabolicity of the conduction band provide a quantitative and accurate description of the confinement potential and resulting energy level structure. Surfaces of the nanowire terminated by HfO 2 are shown to have their interface donor density reduced by a factor of 30 signifying the passivating role played by HfO 2 .

Fabrication and nanoscale characterization of magnetic multilayer nanowires

NASA Astrophysics Data System (ADS)

Elawayeb, Mohamed

Magnetic multilayers nanowires are scientifically fascinating and have potential industrial applications in many areas of advanced nanotechnology. These applications arise due to the nanoscale dimensions of nanostructures that lead to unique physical properties. Magnetic multilayer nanowires have been successfully produced by electrodeposition into templates. Anodic Aluminium Oxide (AAO) membranes were used as templates in this process; the templates were fabricated by anodization method in acidic solutions at a fixed voltage. The fabrication method of a range of magnetic multilayer nanowires is described in this study and their structure and dimensions were analyzed using scanning electron microscope (SEM), Transmission electron microscope (TEM) and scanning transmission electron microscopy (STEM). This study is focused on the first growth of NiFe/Pt and NiFe/Fe magnetic multilayer nanowires, which were successfully fabricated by pulse electrodeposition into the channels of porous anodic aluminium oxide (AAO) templates, and characterized at the nanoscale. Individual nanowires have uniform structure and regular periodicity. The magnetic and nonmagnetic layers are polycrystalline, with randomly oriented fcc lattice structure crystallites. Chemical compositions of the individual nanowires were analyzed using TEM equipped with energy-dispersive x-ray analysis (EDX) and electron energy loss spectrometry (EELS). The electrical and magnetoresistance properties of individual magnetic multilayer nanowires have been measured inside a SEM using two sharp tip electrodes attached to in situ nanomanipulators and a new electromagnet technique. The giant magnetoresistance (GMR) effect of individual magnetic multilayer nanowires was measured in the current - perpendicular to the plane (CPP) geometry using a new in situ method at variable magnetic field strength and different orientations..

A Characteristic Mode Analysis of Conductive Nanowires and Microwires Above a Lossy Dielectric Half-Space

NASA Astrophysics Data System (ADS)

Kiddle, Daniel S.

Nanowires possess extraordinary mechanical, thermoelectric and electromagnetic properties which led to their incorporation in a wide variety of applications. The purpose of this study is to investigate the effect of material on the electromagnetic response of these nanowires. We used the Method of Moments (MOM) for Arbitrarily Thin Wire (ATW) formulation as an efficient computational technique for calculating the electromagnetic response of nanowires. To explain the calculated electromagnetic response, we evoked the Characteristic Mode Analysis (CMA) which decomposes the current on the wire into a superposition of fundamental current modes. These modes are weighted by two coefficients: (i) the relative importance of each mode at a certain frequency, termed Modal Significance, and (ii) the level of coupling between the incident field and the mode termed the Modal Excitation Coefficient. In this, work we study how the wire's material affect the Modal Significance and the Modal Excitation Coefficient of nanowires. Our results show that the material of the nanowire has a strong effect on the resonance frequency, the bandwidth, and the overlap of the modes showing that the material of the nanowire can be used as a tuning factor to develop sensors with desired radiation characteristics. Nanowires are commonly grown vertically on a substrate and, therefore, we also study the effect of the presence of a lossy dielectric half-space on their electromagnetic response. To efficiently account for this interface, we utilize a modified Green's function using the rigorous Sommerfeld integrals. Our results show that the relative permittivity of the substrate decreases the resonance frequencies of the nanowires and significantly alters their radiation patterns. Most importantly, we find that, if the nanowire is near the interface, its evanescent field's couple to the dielectric half space leading to the majority of the scattered power radiated into the substrate with high

Near Field Imaging of Gallium Nitride Nanowires for Characterization of Minority Carrier Diffusion

DTIC Science & Technology

2009-12-01

diffusion length in nanowires is critical to potential applications in solar cells , spectroscopic sensing, and/or lasers and light emitting diodes (LED...technique has been successfully demonstrated with thin film solar cell materials [4, 5]. In these experiments, the diffusion length was measured using a...minority carrier diffusion length . This technique has been used in the near-field collection mode to image the diffusion of holes in n-type GaN

Step-gate polysilicon nanowires field effect transistor compatible with CMOS technology for label-free DNA biosensor.

PubMed

Wenga, G; Jacques, E; Salaün, A-C; Rogel, R; Pichon, L; Geneste, F

2013-02-15

Currently, detection of DNA hybridization using fluorescence-based detection technique requires expensive optical systems and complex bioinformatics tools. Hence, the development of new low cost devices that enable direct and highly sensitive detection stimulates a lot of research efforts. Particularly, devices based on silicon nanowires are emerging as ultrasensitive electrical sensors for the direct detection of biological species thanks to their high surface to volume ratio. In this study, we propose innovative devices using step-gate polycrystalline silicon nanowire FET (poly-Si NW FETs), achieved with simple and low cost fabrication process, and used as ultrasensitive electronic sensor for DNA hybridization. The poly-SiNWs are synthesized using the sidewall spacer formation technique. The detailed fabrication procedure for a step-gate NWFET sensor is described in this paper. No-complementary and complementary DNA sequences were clearly discriminated and detection limit to 1 fM range is observed. This first result using this nano-device is promising for the development of low cost and ultrasensitive polysilicon nanowires based DNA sensors compatible with the CMOS technology. Copyright © 2012 Elsevier B.V. All rights reserved.

High-Yield Growth and Characterization of ⟨100⟩ InP p-n Diode Nanowires.

PubMed

Cavalli, Alessandro; Wang, Jia; Esmaeil Zadeh, Iman; Reimer, Michael E; Verheijen, Marcel A; Soini, Martin; Plissard, Sebastien R; Zwiller, Val; Haverkort, Jos E M; Bakkers, Erik P A M

2016-05-11

Semiconductor nanowires are nanoscale structures holding promise in many fields such as optoelectronics, quantum computing, and thermoelectrics. Nanowires are usually grown vertically on (111)-oriented substrates, while (100) is the standard in semiconductor technology. The ability to grow and to control impurity doping of ⟨100⟩ nanowires is crucial for integration. Here, we discuss doping of single-crystalline ⟨100⟩ nanowires, and the structural and optoelectronic properties of p-n junctions based on ⟨100⟩ InP nanowires. We describe a novel approach to achieve low resistance electrical contacts to nanowires via a gradual interface based on p-doped InAsP. As a first demonstration in optoelectronic devices, we realize a single nanowire light emitting diode in a ⟨100⟩-oriented InP nanowire p-n junction. To obtain high vertical yield, which is necessary for future applications, we investigate the effect of the introduction of dopants on the nanowire growth.

Nanodevices based on silicon nanowires.

PubMed

Wan, Yuting; Sha, Jian; Chen, Bo; Fang, Yanjun; Wang, Zongli; Wang, Yewu

2009-01-01

Silicon nanowires (SiNWs) have been demonstrated as one of the promising building blocks for future nanodevices such as field effect transistors, solar cells, sensors and lithium battery; much progress has been made in this field during last decades. In this review paper, the synthesis and physical properties of SiNWs are introduced briefly. Significant advances of SiNWs-related nanodevices reported in recent literature and registered patents are reviewed. The latest development and prospects of SiNWs-related nanodevices are also discussed.

Nanowires Bending over Backward from Strain Partitioning in Asymmetric Core-Shell Heterostructures.

PubMed

Lewis, Ryan B; Corfdir, Pierre; Küpers, Hanno; Flissikowski, Timur; Brandt, Oliver; Geelhaar, Lutz

2018-04-11

The flexibility and quasi-one-dimensional nature of nanowires offer wide-ranging possibilities for novel heterostructure design and strain engineering. In this work, we realize arrays of extremely and controllably bent nanowires comprising lattice-mismatched and highly asymmetric core-shell heterostructures. Strain sharing across the nanowire heterostructures is sufficient to bend vertical nanowires over backward to contact either neighboring nanowires or the substrate itself, presenting new possibilities for designing nanowire networks and interconnects. Photoluminescence spectroscopy on bent-nanowire heterostructures reveals that spatially varying strain fields induce charge carrier drift toward the tensile-strained outside of the nanowires, and that the polarization response of absorbed and emitted light is controlled by the bending direction. This unconventional strain field is employed for light emission by placing an active region of quantum dots at the outer side of a bent nanowire to exploit the carrier drift and tensile strain. These results demonstrate how bending in nanoheterostructures opens up new degrees of freedom for strain and device engineering.

Hole-dominated transport in InSb nanowires grown on high-quality InSb films

NASA Astrophysics Data System (ADS)

Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U.

2016-12-01

We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between S b 2 S 3 and I n and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40-60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 1017 cm-3 and 1000 cm2 V-1 s-1, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

Study of spin dynamics and damping on the magnetic nanowire arrays with various nanowire widths

NASA Astrophysics Data System (ADS)

Cho, Jaehun; Fujii, Yuya; Konioshi, Katsunori; Yoon, Jungbum; Kim, Nam-Hui; Jung, Jinyong; Miwa, Shinji; Jung, Myung-Hwa; Suzuki, Yoshishige; You, Chun-Yeol

2016-07-01

We investigate the spin dynamics including Gilbert damping in the ferromagnetic nanowire arrays. We have measured the ferromagnetic resonance of ferromagnetic nanowire arrays using vector-network analyzer ferromagnetic resonance (VNA-FMR) and analyzed the results with the micromagnetic simulations. We find excellent agreement between the experimental VNA-FMR spectra and micromagnetic simulations result for various applied magnetic fields. We find that the same tendency of the demagnetization factor for longitudinal and transverse conditions, Nz (Ny) increases (decreases) as increasing the nanowire width in the micromagnetic simulations while Nx is almost zero value in transverse case. We also find that the Gilbert damping constant increases from 0.018 to 0.051 as the increasing nanowire width for the transverse case, while it is almost constant as 0.021 for the longitudinal case.

Fabrication of single Ga-doped ZnS nanowires as high-gain photosensors by focused ion beam deposition

NASA Astrophysics Data System (ADS)

Yen, Shih-Hsiang; Hung, Yu-Chen; Yeh, Ping-Hung; Su, Ya-Wen; Wang, Chiu-Yen

2017-09-01

ZnS nanowires were synthesized via a vapor-liquid-solid mechanism and then fabricated into a single-nanowire field-effect transistor by focused ion beam (FIB) deposition. The field-effect electrical properties of the FIB-fabricated ZnS nanowire device, namely conductivity, mobility and hole concentration, were 9.13 Ω-1 cm-1, 13.14 cm2 V-1 s-1and 4.27 × 1018 cm-3, respectively. The photoresponse properties of the ZnS nanowires were studied and the current responsivity, current gain, response time and recovery time were 4.97 × 106 A W-1, 2.43 × 107, 9 s and 24 s, respectively. Temperature-dependent I-V measurements were used to analyze the interfacial barrier height between ZnS and the FIB-deposited Pt electrode. The results show that the interfacial barrier height is as low as 40 meV. The energy-dispersive spectrometer elemental line scan shows the influence of Ga ions on the ZnS nanowire surface on the FIB-deposited Pt contact electrodes. The results of temperature-dependent I-V measurements and the elemental line scan indicate that Ga ions were doped into the ZnS nanowire, reducing the barrier height between the FIB-deposited Pt electrodes and the single ZnS nanowire. The small barrier height results in the FIB-fabricated ZnS nanowire device acting as a high-gain photosensor.

Electrical breakdown and nanogap formation of indium oxide core/shell heterostructure nanowires.

PubMed

Jung, Minkyung; Song, Woon; Sung Lee, Joon; Kim, Nam; Kim, Jinhee; Park, Jeunghee; Lee, Hyoyoung; Hirakawa, Kazuhiko

2008-12-10

We report the electrical breakdown behavior and subsequent nanogap formation of In(2)O(3)/InO(x) core/shell heterostructure nanowires with substrate-supported and suspended structures. The radial heterostructure nanowires, composed of crystalline In(2)O(3) cores and amorphous In-rich shells, are grown by chemical vapor deposition. As the nanowires broke down, they exhibited two distinct current drops in the current-voltage characteristics. The tips of the broken nanowires were found to have a cone or a volcano shape depending on the width of the nanowire. The shape, the size, and the position of the nanogap depend strongly on the device structure and the nanowire dimensions. The substrate-supported and the suspended devices exhibit distinct breakdown behavior which can be explained by the diffusive thermal transport model. The breakdown temperature of the nanowire is estimated to be about 450 K, close to the melting temperature of indium. We demonstrated the usefulness of this technique by successful fabrication of working pentacene field-effect transistors.

Atomic-Resolution Spectrum Imaging of Semiconductor Nanowires.

PubMed

Zamani, Reza R; Hage, Fredrik S; Lehmann, Sebastian; Ramasse, Quentin M; Dick, Kimberly A

2018-03-14

Over the past decade, III-V heterostructure nanowires have attracted a surge of attention for their application in novel semiconductor devices such as tunneling field-effect transistors (TFETs). The functionality of such devices critically depends on the specific atomic arrangement at the semiconductor heterointerfaces. However, most of the currently available characterization techniques lack sufficient spatial resolution to provide local information on the atomic structure and composition of these interfaces. Atomic-resolution spectrum imaging by means of electron energy-loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) is a powerful technique with the potential to resolve structure and chemical composition with sub-angstrom spatial resolution and to provide localized information about the physical properties of the material at the atomic scale. Here, we demonstrate the use of atomic-resolution EELS to understand the interface atomic arrangement in three-dimensional heterostructures in semiconductor nanowires. We observed that the radial interfaces of GaSb-InAs heterostructure nanowires are atomically abrupt, while the axial interface in contrast consists of an interfacial region where intermixing of the two compounds occurs over an extended spatial region. The local atomic configuration affects the band alignment at the interface and, hence, the charge transport properties of devices such as GaSb-InAs nanowire TFETs. STEM-EELS thus represents a very promising technique for understanding nanowire physical properties, such as differing electrical behavior across the radial and axial heterointerfaces of GaSb-InAs nanowires for TFET applications.

Hard X-ray Full Field Nano-imaging of Bone and Nanowires at SSRL

NASA Astrophysics Data System (ADS)

Andrews, Joy C.; Pianetta, Piero; Meirer, Florian; Chen, Jie; Almeida, Eduardo; van der Meulen, Marjolein C. H.; Alwood, Joshua S.; Lee, Cathy; Zhu, Jia; Cui, Yi

2010-06-01

A hard X-ray full field microscope from Xradia Inc. has been installed at SSRL on a 54-pole wiggler end station at beam line 6-2. It has been optimized to operate from 5-14 keV with resolution as high as 30 nm. High quality images are achieved using a vertical beam stabilizer and condenser scanner with high efficiency zone plates with 30 nm outermost zone width. The microscope has been used in Zernike phase contrast, available at 5.4 keV and 8 keV, as well as absorption contrast to image a variety of biological, environmental and materials samples. Calibration of the X-ray attenuation with crystalline apatite enabled quantification of bone density of plate-like and rod-like regions of mouse bone trabecula. 3D tomography of individual lacuna revealed the surrounding cell canaliculi and processes. 3D tomography of chiral branched PbSe nanowires showed orthogonal branches around a central nanowire.

Hard X-ray Full Field Nano-imaging of Bone and Nanowires at SSRL.

PubMed

Andrews, Joy C; Pianetta, Piero; Meirer, Florian; Chen, Jie; Almeida, Eduardo; van der Meulen, Marjolein C H; Alwood, Joshua S; Lee, Cathy; Zhu, Jia; Cui, Yi

2010-06-23

A hard X-ray full field microscope from Xradia Inc. has been installed at SSRL on a 54-pole wiggler end station at beam line 6-2. It has been optimized to operate from 5-14 keV with resolution as high as 30 nm. High quality images are achieved using a vertical beam stabilizer and condenser scanner with high efficiency zone plates with 30 nm outermost zone width. The microscope has been used in Zernike phase contrast, available at 5.4 keV and 8 keV, as well as absorption contrast to image a variety of biological, environmental and materials samples. Calibration of the X-ray attenuation with crystalline apatite enabled quantification of bone density of plate-like and rod-like regions of mouse bone trabecula. 3D tomography of individual lacuna revealed the surrounding cell canaliculi and processes. 3D tomography of chiral branched PbSe nanowires showed orthogonal branches around a central nanowire.

Catalyst-free growth of ZnO nanowires on ITO seed/glass by thermal evaporation method: Effects of ITO seed layer thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alsultany, Forat H., E-mail: foratusm@gmail.com; Ahmed, Naser M.; Hassan, Z.

A seed/catalyst-free growth of ZnO nanowires (ZnO-NWs) on a glass substrate were successfully fabricated using thermal evaporation technique. These nanowires were grown on ITO seed layers of different thicknesses of 25 and 75 nm, which were deposited on glass substrates by radio frequency (RF) magnetron sputtering. Prior to synthesized ITO nanowires, the sputtered ITO seeds were annealed using the continuous wave (CW) CO2 laser at 450 °C in air for 15 min. The effect of seed layer thickness on the morphological, structural, and optical properties of ZnO-NWs were systematically investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM),more » and UV-Vis spectrophotometer.« less

Nanowire Photovoltaic Devices

NASA Technical Reports Server (NTRS)

Forbes, David

2015-01-01

Firefly Technologies, in collaboration with the Rochester Institute of Technology and the University of Wisconsin-Madison, developed synthesis methods for highly strained nanowires. Two synthesis routes resulted in successful nanowire epitaxy: direct nucleation and growth on the substrate and a novel selective-epitaxy route based on nanolithography using diblock copolymers. The indium-arsenide (InAs) nanowires are implemented in situ within the epitaxy environment-a significant innovation relative to conventional semiconductor nanowire generation using ex situ gold nanoparticles. The introduction of these nanoscale features may enable an intermediate band solar cell while simultaneously increasing the effective absorption volume that can otherwise limit short-circuit current generated by thin quantized layers. The use of nanowires for photovoltaics decouples the absorption process from the current extraction process by virtue of the high aspect ratio. While no functional solar cells resulted from this effort, considerable fundamental understanding of the nanowire epitaxy kinetics and nanopatterning process was developed. This approach could, in principle, be an enabling technology for heterointegration of dissimilar materials. The technology also is applicable to virtual substrates. Incorporating nanowires onto a recrystallized germanium/metal foil substrate would potentially solve the problem of grain boundary shunting of generated carriers by restricting the cross-sectional area of the nanowire (tens of nanometers in diameter) to sizes smaller than the recrystallized grains (0.5 to 1 micron(exp 2).

Proximity-induced superconductivity in crystalline Cu and Co nanowires and nanogranular Co structures

NASA Astrophysics Data System (ADS)

Kompaniiets, M.; Dobrovolskiy, O. V.; Neetzel, C.; Begun, E.; Porrati, F.; Ensinger, W.; Huth, M.

2014-08-01

We report an experimental study of proximity effect-induced superconductivity in crystalline Cu and Co nanowires and a nanogranular Co nanowire structure in contact with a superconducting W-based floating electrode (inducer). For electrical resistance measurements up to three pairs of Pt-based voltage leads were attached at different distances beside the inner inducer electrode, thus allowing us to probe the proximity effect over a length of 2-12 μm. Up to 30% resistance drops with respect to the normal-state value have been observed for the crystalline Co and Cu nanowires when sweeping the temperature below Tc of the inducer (5.2 K). By contrast, relative R(T) drops were found to be an order of magnitude smaller for the nanogranular Co nanowire structure. Our analysis of the resistance data shows that the superconducting proximity length in crystalline Cu and Co is about 1 μm at 2.4 K, attesting to a long-range proximity effect in the Co nanowire. Moreover, this long-range proximity effect is insusceptible to magnetic fields up to 11 T, which is indicative of spin-triplet pairing. At the same time, proximity-induced superconductivity in the nanogranular Co nanowire is strongly suppressed due to the dominating Cooper pair scattering caused by its intrinsic microstructure.

Hints of hybridizing Majorana fermions in a nanowire coupled to superconducting leads

NASA Astrophysics Data System (ADS)

Finck, A. D. K.; van Harlingen, D. J.; Mohseni, P. K.; Jung, K.; Li, X.

2013-03-01

It has been proposed that a nanowire with strong spin-orbit coupling that is contacted with a conventional superconductor and subjected to a large magnetic field can be driven through a topological phase transition. In this regime, the two ends of the nanowire together host a pair of quasi-particles known as Majorana fermions (MFs). A key feature of MFs is that they are pinned to zero energy when the topological nanowire is long enough such that the wave functions of the two MFs do not overlap significantly, resulting in a zero bias anomaly (ZBA). It has been recently predicted that changes in external parameters can vary the wave function overlap and cause the MFs to hybridize in an oscillatory fashion. This would lead to a non-monotonic splitting or broadening of the ZBA and help distinguish MF transport signatures from a Kondo effect. Here, we present transport studies of an InAs nanowire contacted with niobium nitride leads in high magnetic fields. We observe a number of robust ZBAs that can persist for a wide range of back gate bias and magnetic field strength. Under certain conditions, we find that the height and width of the ZBA can oscillate with back gate bias or magnetic field. This work was supported by Microsoft Project Q.

Fabrication of a Silicon Nanowire on a Bulk Substrate by Use of a Plasma Etching and Total Ionizing Dose Effects on a Gate-All-Around Field-Effect Transistor

NASA Technical Reports Server (NTRS)

Moon, Dong-Il; Han, Jin-Woo; Meyyappan, Meyya

2016-01-01

The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.

Synthesis of In2O3 nanowire-decorated Ga2O3 nanobelt heterostructures and their electrical and field-emission properties.

PubMed

Lin, Jing; Huang, Yang; Bando, Yoshio; Tang, Chengchun; Li, Chun; Golberg, Dmitri

2010-04-27

We report on the synthesis of In2O3 nanowire-decorated Ga2O3 nanobelt heterostructures via a simple catalyst-free method. A typical heterostructure, where an In2O3 nanowire forms a sort of a "dorsal fin" on the Ga2O3 nanobelt, exhibits the T-shaped cross-section. The structure, electrical porperties, and field-emission properties of this material are systematically investigated. The heterostructures possess a typical n-type semiconducting behavior with enhanced conductivity. Field-emission measurements show that they have a low turn-on field (approximately 1.31 V/microm) and a high field-enhancement factor (over 4000). The excellent field-emission characteristics are attributed to their special geometry and good electrical properties. The present In2O3-decorated Ga2O3 heterostructures are envisaged to be decent field-emitters useful in advanced electronic and optoelectronic nanodevices.

High speed superconducting nanowire single-photon detector with nine interleaved nanowires

NASA Astrophysics Data System (ADS)

Huang, Jia; Zhang, Weijun; You, Lixing; Zhang, Chengjun; Lv, Chaolin; Wang, Yong; Liu, Xiaoyu; Li, Hao; Wang, Zhen

2018-07-01

Count rate (CR) is one of the key parameters of superconducting nanowire single-photon detectors (SNSPDs). The practical SNSPDs usually have a CR of a few MHz to a few tens of MHz owing to the large kinetic inductance originating from the long nanowire, which is necessary for effectively coupling the photons. A feasible approach to decrease the kinetic inductance and consequently increase the detection speed is to replace a long single nanowire with multiple individual nanowires in an array. In this study, we report an SNSPD of nine interleaved nanowires with 70% system detection efficiency (SDE) and 200 Hz dark count rate at the low-photon-flux limit of 1550 nm. Owing to the small dead time (<6 ns) of each nanowire, the SNSPD achieved a maximum CR of 0.93 GHz at a photon flux of 1.26 × 1010 photons s‑1 with an SDE of ∼7.4%, and a CR of 200 MHz with an SDE of over 50%. Furthermore, a photon number resolvability of up to nine photons was also demonstrated.

Vapor-liquid-solid growth of silicon and silicon germanium nanowires

NASA Astrophysics Data System (ADS)

Nimmatoori, Pramod

2009-12-01

Si and Si1-xGex nanowires are promising materials with potential applications in various disciplines of science and technology. Small diameter nanowires can act as model systems to study interesting phenomena such as tunneling that occur in the nanometer regime. Furthermore, technical challenges in fabricating nanoscale size devices from thin films have resulted in interest and research on nanowires. In this perspective, vertical integrated nanowire field effect transistors (VINFETs) fabricated from Si nanowires are promising devices that offer better control on device properties and push the transistor architecture into the third dimension potentially enabling ultra-high transistor density circuits. Transistors fabricated from Si/Si 1-xGex nanowires have also been proposed that can have high carrier mobility. In addition, the Si and Si1-xGe x nanowires have potential to be used in various applications such as sensing, thermoelectrics and solar cells. Despite having considerable potential, the understanding of the vapor-liquid-solid (VLS) mechanism utilized to fabricate these wires is still rudimentary. Hence, the objective of this thesis is to understand the effects of nanoscale size and the role of catalyst that mediates the wire growth on the growth rate of Si and Si1-xGe x nanowires and interfacial abruptness in Si/Si1-xGe x axial heterostructure nanowires. Initially, the growth and structural properties of Si nanowires with tight diameter distribution grown from 10, 20 and 50 nm Au particles dispersed on a polymer-modified substrate was studied. A nanoparticle application process was developed to disperse Au particles on the substrate surface with negligible agglomeration and sufficient density. The growth temperature and SiH4 partial pressure were varied to optimize the growth conditions amenable to VLS growth with smooth wire morphology and negligible Si thin film deposition on wire sidewalls. The Si nanowire growth rate was studied as a function of growth

Guided growth of horizontal GaN nanowires on quartz and their transfer to other substrates.

PubMed

Goren-Ruck, Lior; Tsivion, David; Schvartzman, Mark; Popovitz-Biro, Ronit; Joselevich, Ernesto

2014-03-25

The guided growth of horizontal nanowires has so far been demonstrated on a limited number of substrates. In most cases, the nanowires are covalently bonded to the substrate where they grow and cannot be transferred to other substrates. Here we demonstrate the guided growth of well-aligned horizontal GaN nanowires on quartz and their subsequent transfer to silicon wafers by selective etching of the quartz while maintaining their alignment. The guided growth was observed on different planes of quartz with varying degrees of alignment. We characterized the crystallographic orientations of the nanowires and proposed a new mechanism of "dynamic graphoepitaxy" for their guided growth on quartz. The transfer of the guided nanowires enabled the fabrication of back-gated field-effect transistors from aligned nanowire arrays on oxidized silicon wafers and the production of crossbar arrays. The guided growth of transferrable nanowires opens up the possibility of massively parallel integration of nanowires into functional systems on virtually any desired substrate.

APPLIED OPTICS. Voltage-tunable circular photogalvanic effect in silicon nanowires.

PubMed

Dhara, Sajal; Mele, Eugene J; Agarwal, Ritesh

2015-08-14

Electronic bands in crystals can support nontrivial topological textures arising from spin-orbit interactions, but purely orbital mechanisms can realize closely related dynamics without breaking spin degeneracies, opening up applications in materials containing only light elements. One such application is the circular photogalvanic effect (CPGE), which is the generation of photocurrents whose magnitude and polarity depend on the chirality of optical excitation. We show that the CPGE can arise from interband transitions at the metal contacts to silicon nanowires, where inversion symmetry is locally broken by an electric field. Bias voltage that modulates this field further controls the sign and magnitude of the CPGE. The generation of chirality-dependent photocurrents in silicon with a purely orbital-based mechanism will enable new functionalities in silicon that can be integrated with conventional electronics. Copyright © 2015, American Association for the Advancement of Science.

Gibbs-Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth.

PubMed

Shen, Youde; Chen, Renjie; Yu, Xuechao; Wang, Qijie; Jungjohann, Katherine L; Dayeh, Shadi A; Wu, Tom

2016-07-13

Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor-liquid-solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. Here, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs-Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs-Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. These results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices.

Ferromagnetic resonance in low interacting permalloy nanowire arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Raposo, V.; Zazo, M.; Flores, A. G.

2016-04-14

Dipolar interactions on magnetic nanowire arrays have been investigated by various techniques. One of the most powerful techniques is the ferromagnetic resonance spectroscopy, because the resonance field depends directly on the anisotropy field strength and its frequency dependence. In order to evaluate the influence of magnetostatic dipolar interactions among ferromagnetic nanowire arrays, several densely packed hexagonal arrays of NiFe nanowires have been prepared by electrochemical deposition filling self-ordered nanopores of alumina membranes with different pore sizes but keeping the same interpore distance. Nanowires’ diameter was changed from 90 to 160 nm, while the lattice parameter was fixed to 300 nm, which wasmore » achieved by carefully reducing the pore diameter by means of Atomic Layer Deposition of conformal Al{sub 2}O{sub 3} layers on the nanoporous alumina templates. Field and frequency dependence of ferromagnetic resonance have been studied in order to obtain the dispersion diagram which gives information about anisotropy, damping factor, and gyromagnetic ratio. The relationship between resonance frequency and magnetic field can be explained by the roles played by the shape anisotropy and dipolar interactions among the ferromagnetic nanowires.« less

Magnetoconductance signatures of subband structure in semiconductor nanowires

NASA Astrophysics Data System (ADS)

Holloway, Gregory; Haapamaki, Chris; Lapierre, Ray; Baugh, Jonathan

2015-03-01

Understanding the subband structure due to radial confinement in semiconductor nanowires can benefit technologies ranging from optical sensors to quantum information processing. An axial magnetic field couples to the orbital angular momentum, giving rise to non-trivial features in electronic transport as a function of magnetic field. Previous reports focused on conduction electrons confined to a thin shell near the nanowire surface, which lead to flux-periodic energies and conductance oscillations. Here, we calculate the eigenstates for more general radial potentials with moderate to low surface band bending such that electrons are distributed more uniformly across the nanowire cross-section. It is found that the energy spectrum becomes aperiodic in both gate voltage and magnetic field as the radial potential becomes flatter. The behavior of an energy level is dictated by its angular momentum, and this allows, in principle, each state to be identified based on its dependence on magnetic field and the chemical potential. We experimentally investigate a short-channel InAs nanowire FET in search of conductance features that reveal this subband structure. A quantitative measure for assigning conductance features to specific transverse states is introduced and applied to this device.

Spatially resolved Hall effect measurement in a single semiconductor nanowire.

PubMed

Storm, Kristian; Halvardsson, Filip; Heurlin, Magnus; Lindgren, David; Gustafsson, Anders; Wu, Phillip M; Monemar, Bo; Samuelson, Lars

2012-11-01

Efficient light-emitting diodes and photovoltaic energy-harvesting devices are expected to play an important role in the continued efforts towards sustainable global power consumption. Semiconductor nanowires are promising candidates as the active components of both light-emitting diodes and photovoltaic cells, primarily due to the added freedom in device design offered by the nanowire geometry. However, for nanowire-based components to move past the proof-of-concept stage and be implemented in production-grade devices, it is necessary to precisely quantify and control fundamental material properties such as doping and carrier mobility. Unfortunately, the nanoscale geometry that makes nanowires interesting for applications also makes them inherently difficult to characterize. Here, we report a method to carry out Hall measurements on single core-shell nanowires. Our technique allows spatially resolved and quantitative determination of the carrier concentration and mobility of the nanowire shell. As Hall measurements have previously been completely unavailable for nanowires, the experimental platform presented here should facilitate the implementation of nanowires in advanced practical devices.

Highly Sensitive Ammonia Gas Sensor Based on Single-Crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor.

PubMed

Mun, Seohyun; Park, Yoonkyung; Lee, Yong-Eun Koo; Sung, Myung Mo

2017-11-28

A highly sensitive organic field-effect transistor (OFET)-based sensor for ammonia in the range of 0.01 to 25 ppm was developed. The sensor was fabricated by employing an array of single-crystal poly(3-hexylthiophene) (P3HT) nanowires as the organic semiconductor (OSC) layer of an OFET with a top-contact geometry. The electrical characteristics (field-effect mobility, on/off current ratio) of the single-crystal P3HT nanowire OFET were about 2 orders of magnitude larger than those of the P3HT thin film OFET with the same geometry. The P3HT nanowire OFET showed excellent sensitivity to ammonia, about 3 times higher than that of the P3HT thin film OFET at 25 ppm ammonia. The ammonia response of the OFET was reversible and was not affected by changes in relative humidity from 45 to 100%. The high ammonia sensitivity of the P3HT nanowire OFET is believed to result from the single crystal nature and high surface/volume ratio of the P3HT nanowire used in the OSC layer.

Superconducting nanowire networks formed on nanoporous membrane substrates

NASA Astrophysics Data System (ADS)

Luo, Qiong

Introducing a regular array of holes into superconducting thin films has been actively pursued to stabilize and pin the vortex lattice against external driving forces, enabling higher current capabilities. If the width of the sections between neighboring holes is comparable to the superconducting coherence length, the circulation of the Cooper pairs in around the holes in the presence of a magnetic field can also produce the Little-Parks effect, i.e. periodic oscillation of the critical temperature. These two mechanisms, commensurate vortex pinning enhancement by the hole-array and the critical temperature oscillations of a wire network due to Little-Parks effect can induce similar experimental observations such as magnetoresistance oscillation and enhancement of the critical current at specific magnetic fields. This dissertation work investigates the effect of a hole-array on the properties of superconducting films deposited onto nanoporous substrates. Experiments on anisotropies of the critical temperature for niobium films on anodic aluminum oxide membrane substrates containing a regular hole-array reveal that the critical temperature exhibits two strong anisotropic effects: Little-Parks oscillations whose period varies with field direction superimposed on a smooth background arising from one dimensional confinement by the finite lateral space between neighboring holes. The two components of the anisotropy are intrinsically linked and appear in concert. That is, the hole-array changes the dimensionality of a two-dimensional (2D) film to a network of 1D nanowire network. Network of superconducting nanowires with transverse dimensions as small as few nanometers were achieved by coating molybdenum germanium (MoGe) layer onto commercially available filtration membranes which have extremely dense nanopores. The magnetoresistance, magnetic field dependence of the critical temperature and the anisotropies of the synthesized MoGe nanowire networks can be consistently

Nonlinear Dynamics of Silicon Nanowire Resonator Considering Nonlocal Effect.

PubMed

Jin, Leisheng; Li, Lijie

2017-12-01

In this work, nonlinear dynamics of silicon nanowire resonator considering nonlocal effect has been investigated. For the first time, dynamical parameters (e.g., resonant frequency, Duffing coefficient, and the damping ratio) that directly influence the nonlinear dynamics of the nanostructure have been derived. Subsequently, by calculating their response with the varied nonlocal coefficient, it is unveiled that the nonlocal effect makes more obvious impacts at the starting range (from zero to a small value), while the impact of nonlocal effect becomes weaker when the nonlocal term reaches to a certain threshold value. Furthermore, to characterize the role played by nonlocal effect in exerting influence on nonlinear behaviors such as bifurcation and chaos (typical phenomena in nonlinear dynamics of nanoscale devices), we have calculated the Lyapunov exponents and bifurcation diagram with and without nonlocal effect, and results shows the nonlocal effect causes the most significant effect as the device is at resonance. This work advances the development of nanowire resonators that are working beyond linear regime.

Majorana ϕ0-junction in a disordered spin-orbit coupling nanowire with tilted magnetic field

NASA Astrophysics Data System (ADS)

Huang, Hong; Liang, Qi-Feng; Yao, Dao-Xin; Wang, Zhi

2017-12-01

Majorana Josephson junctions in nanowire systems exhibit a pseudo-4π period current-phase relation in the clean limit. In this work, we study how this current-phase relation responds to a tilted magnetic field in a disordered Majorana Josephson junction within the Bogoliubov-de Gennes approach. We show that the tilted magnetic field induces a ϕ0 phase shift to the current-phase relation. Most importantly, we find that this ϕ0-junction behavior is robust even in the presence of disorders.

Long term stability of nanowire nanoelectronics in physiological environments.

PubMed

Zhou, Wei; Dai, Xiaochuan; Fu, Tian-Ming; Xie, Chong; Liu, Jia; Lieber, Charles M

2014-03-12

Nanowire nanoelectronic devices have been exploited as highly sensitive subcellular resolution detectors for recording extracellular and intracellular signals from cells, as well as from natural and engineered/cyborg tissues, and in this capacity open many opportunities for fundamental biological research and biomedical applications. Here we demonstrate the capability to take full advantage of the attractive capabilities of nanowire nanoelectronic devices for long term physiological studies by passivating the nanowire elements with ultrathin metal oxide shells. Studies of Si and Si/aluminum oxide (Al2O3) core/shell nanowires in physiological solutions at 37 °C demonstrate long-term stability extending for at least 100 days in samples coated with 10 nm thick Al2O3 shells. In addition, investigations of nanowires configured as field-effect transistors (FETs) demonstrate that the Si/Al2O3 core/shell nanowire FETs exhibit good device performance for at least 4 months in physiological model solutions at 37 °C. The generality of this approach was also tested with in studies of Ge/Si and InAs nanowires, where Ge/Si/Al2O3 and InAs/Al2O3 core/shell materials exhibited stability for at least 100 days in physiological model solutions at 37 °C. In addition, investigations of hafnium oxide-Al2O3 nanolaminated shells indicate the potential to extend nanowire stability well beyond 1 year time scale in vivo. These studies demonstrate that straightforward core/shell nanowire nanoelectronic devices can exhibit the long term stability needed for a range of chronic in vivo studies in animals as well as powerful biomedical implants that could improve monitoring and treatment of disease.

Long Term Stability of Nanowire Nanoelectronics in Physiological Environments

PubMed Central

2015-01-01

Nanowire nanoelectronic devices have been exploited as highly sensitive subcellular resolution detectors for recording extracellular and intracellular signals from cells, as well as from natural and engineered/cyborg tissues, and in this capacity open many opportunities for fundamental biological research and biomedical applications. Here we demonstrate the capability to take full advantage of the attractive capabilities of nanowire nanoelectronic devices for long term physiological studies by passivating the nanowire elements with ultrathin metal oxide shells. Studies of Si and Si/aluminum oxide (Al2O3) core/shell nanowires in physiological solutions at 37 °C demonstrate long-term stability extending for at least 100 days in samples coated with 10 nm thick Al2O3 shells. In addition, investigations of nanowires configured as field-effect transistors (FETs) demonstrate that the Si/Al2O3 core/shell nanowire FETs exhibit good device performance for at least 4 months in physiological model solutions at 37 °C. The generality of this approach was also tested with in studies of Ge/Si and InAs nanowires, where Ge/Si/Al2O3 and InAs/Al2O3 core/shell materials exhibited stability for at least 100 days in physiological model solutions at 37 °C. In addition, investigations of hafnium oxide-Al2O3 nanolaminated shells indicate the potential to extend nanowire stability well beyond 1 year time scale in vivo. These studies demonstrate that straightforward core/shell nanowire nanoelectronic devices can exhibit the long term stability needed for a range of chronic in vivo studies in animals as well as powerful biomedical implants that could improve monitoring and treatment of disease. PMID:24479700

Effectively Single-Mode Self-Recovering Ultrafast Nonlinear Nanowire Surface Plasmons

NASA Astrophysics Data System (ADS)

Tuniz, Alessandro; Weidlich, Stefan; Schmidt, Markus A.

2018-04-01

We report on a regime for surface-plasmon propagation, which is robust to defects and effectively single mode, and we exploit it for accessing the ultrafast nonlinear response of gold on centimeter-long subwavelength-diameter cylindrical nanowires. The hybrid plasmonic-photonic platform is formed by a gold nanowire, monolithically integrated into the core of an optical fiber. We show that, despite the dual-waveguide nature of this structure, the long-range surface plasmon is the only effectively propagating mode in the near infrared, which self-recovers in the presence of gaps via a light-recapturing effect. This self-recovery overcomes detrimental effects of wire discontinuities and enables measurements of the ultrafast nonlinearity of gold, which we perform for a 28-fs pulse duration.

A III-V nanowire channel on silicon for high-performance vertical transistors.

PubMed

Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

2012-08-09

Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

Molybdenum disulfide nanoflake-zinc oxide nanowire hybrid photoinverter.

PubMed

Hosseini Shokouh, Seyed Hossein; Pezeshki, Atiye; Ali Raza, Syed Raza; Choi, Kyunghee; Min, Sung-Wook; Jeon, Pyo Jin; Lee, Hee Sung; Im, Seongil

2014-05-27

We demonstrate a hybrid inverter-type nanodevice composed of a MoS2 nanoflake field-effect transistor (FET) and ZnO nanowire Schottky diode on one substrate, aiming at a one-dimensional (1D)-two-dimensional (2D) hybrid integrated electronic circuit with multifunctional capacities of low power consumption, high gain, and photodetection. In the present work, we used a nanotransfer printing method using polydimethylsiloxane for the fabrication of patterned bottom-gate MoS2 nanoflake FETs, so that they could be placed near the ZnO nanowire Schottky diodes that were initially fabricated. The ZnO nanowire Schottky diode and MoS2 FET worked respectively as load and driver for a logic inverter, which exhibits a high voltage gain of ∼50 at a supply voltage of 5 V and also shows a low power consumption of less than 50 nW. Moreover, our inverter effectively operates as a photoinverter, detecting visible photons, since MoS2 FETs appear very photosensitive, while the serially connected ZnO nanowire Schottky diode was blind to visible light. Our 1D-2D hybrid nanoinverter would be quite promising for both logic and photosensing applications due to its performance and simple device configuration as well.

Single-crystalline chromium silicide nanowires and their physical properties.

PubMed

Hsu, Han-Fu; Tsai, Ping-Chen; Lu, Kuo-Chang

2015-01-01

In this work, chromium disilicide nanowires were synthesized by chemical vapor deposition (CVD) processes on Si (100) substrates with hydrous chromium chloride (CrCl3 · 6H2O) as precursors. Processing parameters, including the temperature of Si (100) substrates and precursors, the gas flow rate, the heating time, and the different flow gas of reactions were varied and studied; additionally, the physical properties of the chromium disilicide nanowires were measured. It was found that single-crystal CrSi2 nanowires with a unique morphology were grown at 700°C, while single-crystal Cr5Si3 nanowires were grown at 750°C in reducing gas atmosphere. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with magnetism, photoluminescence, and field emission measurements demonstrates that CrSi2 nanowires are attractive choices for future applications in magnetic storage, photovoltaic, and field emitters.

Enhanced spin transfer torque effect for transverse domain walls in cylindrical nanowires

NASA Astrophysics Data System (ADS)

Franchin, Matteo; Knittel, Andreas; Albert, Maximilian; Chernyshenko, Dmitri S.; Fischbacher, Thomas; Prabhakar, Anil; Fangohr, Hans

2011-09-01

Recent studies have predicted extraordinary properties for transverse domain walls in cylindrical nanowires: zero depinning current, the absence of the Walker breakdown, and applications as domain wall oscillators. In order to reliably control the domain wall motion, it is important to understand how they interact with pinning centers, which may be engineered, for example, through modulations in the nanowire geometry (such as notches or extrusions) or in the magnetic properties of the material. In this paper we study the motion and depinning of transverse domain walls through pinning centers in ferromagnetic cylindrical nanowires. We use (i) magnetic fields and (ii) spin-polarized currents to drive the domain walls along the wire. The pinning centers are modelled as a section of the nanowire which exhibits a uniaxial crystal anisotropy where the anisotropy easy axis and the wire axis enclose a variable angle θP. Using (i) magnetic fields, we find that the minimum and the maximum fields required to push the domain wall through the pinning center differ by 30%. On the contrary, using (ii) spin-polarized currents, we find variations of a factor 130 between the minimum value of the depinning current density (observed for θP=0∘, i.e., anisotropy axis pointing parallel to the wire axis) and the maximum value (for θP=90∘, i.e., anisotropy axis perpendicular to the wire axis). We study the depinning current density as a function of the height of the energy barrier of the pinning center using numerical and analytical methods. We find that for an industry standard energy barrier of 40kBT, a depinning current of about 5μA (corresponding to a current density of 6×1010A/m2 in a nanowire of 10nm diameter) is sufficient to depin the domain wall. We reveal and explain the mechanism that leads to these unusually low depinning currents. One requirement for this depinning mechanism is for the domain wall to be able to rotate around its own axis. With the right barrier design

High Discharge Energy Density at Low Electric Field Using an Aligned Titanium Dioxide/Lead Zirconate Titanate Nanowire Array

PubMed Central

Zhang, Dou; Liu, Weiwei; Guo, Ru; Zhou, Kechao

2017-01-01

Abstract Polymer‐based capacitors with high energy density have attracted significant attention in recent years due to their wide range of potential applications in electronic devices. However, the obtained high energy density is predominantly dependent on high applied electric field, e.g., 400–600 kV mm−1, which may bring more challenges relating to the failure probability. Here, a simple two‐step method for synthesizing titanium dioxide/lead zirconate titanate nanowire arrays is exploited and a demonstration of their ability to achieve high discharge energy density capacitors for low operating voltage applications is provided. A high discharge energy density of 6.9 J cm−3 is achieved at low electric fields, i.e., 143 kV mm−1, which is attributed to the high relative permittivity of 218.9 at 1 kHz and high polarization of 23.35 µC cm−2 at this electric field. The discharge energy density obtained in this work is the highest known for a ceramic/polymer nanocomposite at such a low electric field. The novel nanowire arrays used in this work are applicable to a wide range of fields, such as energy harvesting, energy storage, and photocatalysis. PMID:29610724

High Discharge Energy Density at Low Electric Field Using an Aligned Titanium Dioxide/Lead Zirconate Titanate Nanowire Array.

PubMed

Zhang, Dou; Liu, Weiwei; Guo, Ru; Zhou, Kechao; Luo, Hang

2018-02-01

Polymer-based capacitors with high energy density have attracted significant attention in recent years due to their wide range of potential applications in electronic devices. However, the obtained high energy density is predominantly dependent on high applied electric field, e.g., 400-600 kV mm -1 , which may bring more challenges relating to the failure probability. Here, a simple two-step method for synthesizing titanium dioxide/lead zirconate titanate nanowire arrays is exploited and a demonstration of their ability to achieve high discharge energy density capacitors for low operating voltage applications is provided. A high discharge energy density of 6.9 J cm -3 is achieved at low electric fields, i.e., 143 kV mm -1 , which is attributed to the high relative permittivity of 218.9 at 1 kHz and high polarization of 23.35 µC cm -2 at this electric field. The discharge energy density obtained in this work is the highest known for a ceramic/polymer nanocomposite at such a low electric field. The novel nanowire arrays used in this work are applicable to a wide range of fields, such as energy harvesting, energy storage, and photocatalysis.

Preparation, characterization, physical properties, and photoconducting behaviour of anthracene derivative nanowires

NASA Astrophysics Data System (ADS)

Xiao, Jinchong; Yin, Zongyou; Yang, Bo; Liu, Yi; Ji, Li; Guo, Jun; Huang, Ling; Liu, Xuewei; Yan, Qingyu; Zhang, Hua; Zhang, Qichun

2011-11-01

Organic nanowires of 9,10-dibromoanthracene (DBA) and 9,10-dicyanoanthracene (DCNA) were obtained by adding the THF solution of DBA/DCNA into water containing P123 surfactants. The as-prepared nanowires were characterized by UV-vis, fluorescence spectra, Field Emission Scanning Electron Microscopy (FESEM), and Transmission Electron Microscopy (TEM). We found that DBA and DCNA nanowires emitted green light rather than blue light for molecules in THF solution. The red-shift UV and fluorescent spectra of DBA and DCNA nanowires implied that these nanowires were formed through J-aggregation. The photoconducting study of DBA/DCNA nanowire-based network on rGO/SiO2/Si shows different photocurrent behaviors upon irradiation, which displayed that electron transfer from DCNA nanowire to rGO was stronger than that of DBA nanowires to rGO.Organic nanowires of 9,10-dibromoanthracene (DBA) and 9,10-dicyanoanthracene (DCNA) were obtained by adding the THF solution of DBA/DCNA into water containing P123 surfactants. The as-prepared nanowires were characterized by UV-vis, fluorescence spectra, Field Emission Scanning Electron Microscopy (FESEM), and Transmission Electron Microscopy (TEM). We found that DBA and DCNA nanowires emitted green light rather than blue light for molecules in THF solution. The red-shift UV and fluorescent spectra of DBA and DCNA nanowires implied that these nanowires were formed through J-aggregation. The photoconducting study of DBA/DCNA nanowire-based network on rGO/SiO2/Si shows different photocurrent behaviors upon irradiation, which displayed that electron transfer from DCNA nanowire to rGO was stronger than that of DBA nanowires to rGO. Electronic supplementary information (ESI) available: XRD patterns and simulations, and FT-IR spectra. CCDC reference numbers 840471. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c1nr10655d

Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

DOE PAGES

Shen, Youde; Chen, Renjie; Yu, Xuechao; ...

2016-06-02

Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor–liquid–solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. In this paper, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs–Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed tomore » impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs–Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. Finally, these results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices.« less

Rapid determination of nanowires electrical properties using a dielectrophoresis-well based system

NASA Astrophysics Data System (ADS)

Constantinou, Marios; Hoettges, Kai F.; Krylyuk, Sergiy; Katz, Michael B.; Davydov, Albert; Rigas, Grigorios-Panagiotis; Stolojan, Vlad; Hughes, Michael P.; Shkunov, Maxim

2017-03-01

The use of high quality semiconducting nanomaterials for advanced device applications has been hampered by the unavoidable growth variability of electrical properties of one-dimensional nanomaterials, such as nanowires and nanotubes, thus highlighting the need for the characterization of efficient semiconducting nanomaterials. In this study, we demonstrate a low-cost, industrially scalable dielectrophoretic (DEP) nanowire assembly method for the rapid analysis of the electrical properties of inorganic single crystalline nanowires, by identifying key features in the DEP frequency response spectrum from 1 kHz to 20 MHz in just 60 s. Nanowires dispersed in anisole were characterized using a three-dimensional DEP chip (3DEP), and the resultant spectrum demonstrated a sharp change in nanowire response to DEP signal in 1-20 MHz frequency range. The 3DEP analysis, directly confirmed by field-effect transistor data, indicates that nanowires of higher quality are collected at high DEP signal frequency range above 10 MHz, whereas lower quality nanowires, with two orders of magnitude lower current per nanowire, are collected at lower DEP signal frequencies. These results show that the 3DEP platform can be used as a very efficient characterization tool of the electrical properties of rod-shaped nanoparticles to enable dielectrophoretic selective deposition of nanomaterials with superior conductivity properties.

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

PubMed Central

Hazut, Ori; Agarwala, Arunava; Subramani, Thangavel; Waichman, Sharon; Yerushalmi, Roie

2013-01-01

Monolayer Contact Doping (MLCD) is a simple method for doping of surfaces and nanostructures1. MLCD results in the formation of highly controlled, ultra shallow and sharp doping profiles at the nanometer scale. In MLCD process the dopant source is a monolayer containing dopant atoms. In this article a detailed procedure for surface doping of silicon substrate as well as silicon nanowires is demonstrated. Phosphorus dopant source was formed using tetraethyl methylenediphosphonate monolayer on a silicon substrate. This monolayer containing substrate was brought to contact with a pristine intrinsic silicon target substrate and annealed while in contact. Sheet resistance of the target substrate was measured using 4 point probe. Intrinsic silicon nanowires were synthesized by chemical vapor deposition (CVD) process using a vapor-liquid-solid (VLS) mechanism; gold nanoparticles were used as catalyst for nanowire growth. The nanowires were suspended in ethanol by mild sonication. This suspension was used to dropcast the nanowires on silicon substrate with a silicon nitride dielectric top layer. These nanowires were doped with phosphorus in similar manner as used for the intrinsic silicon wafer. Standard photolithography process was used to fabricate metal electrodes for the formation of nanowire based field effect transistor (NW-FET). The electrical properties of a representative nanowire device were measured by a semiconductor device analyzer and a probe station. PMID:24326774

Vertical architecture for enhancement mode power transistors based on GaN nanowires

NASA Astrophysics Data System (ADS)

Yu, F.; Rümmler, D.; Hartmann, J.; Caccamo, L.; Schimpke, T.; Strassburg, M.; Gad, A. E.; Bakin, A.; Wehmann, H.-H.; Witzigmann, B.; Wasisto, H. S.; Waag, A.

2016-05-01

The demonstration of vertical GaN wrap-around gated field-effect transistors using GaN nanowires is reported. The nanowires with smooth a-plane sidewalls have hexagonal geometry made by top-down etching. A 7-nanowire transistor exhibits enhancement mode operation with threshold voltage of 1.2 V, on/off current ratio as high as 108, and subthreshold slope as small as 68 mV/dec. Although there is space charge limited current behavior at small source-drain voltages (Vds), the drain current (Id) and transconductance (gm) reach up to 314 mA/mm and 125 mS/mm, respectively, when normalized with hexagonal nanowire circumference. The measured breakdown voltage is around 140 V. This vertical approach provides a way to next-generation GaN-based power devices.

Dewetting process of Au films on SiO2 nanowires: Activation energy evaluation

NASA Astrophysics Data System (ADS)

Ruffino, F.; Grimaldi, M. G.

2015-05-01

SiO2 nanowires gain scientific and technological interest in application fields ranging from nano-electronics, optics and photonics to bio-sensing. Furthermore, the SiO2 nanowires chemical and physical properties, and so their performances in devices, can be enhanced if decorated by metal nanoparticles (such Au) due to local plasmonic effects. In the present paper, we propose a simple, low-cost and high-throughput three-steps methodology for the mass-production of Au nanoparticles coated SiO2 nanowires. It is based on (1) production of the SiO2 nanowires on Si surface by solid state reaction of an Au film with the Si substrate at high temperature; (2) sputtering deposition of Au on the SiO2 nanowires to obtain the nanowires coated by an Au film; and (3) furnace annealing processes to induce the Au film dewetting on the SiO2 nanowires surface. Using scanning electron microscopy analyses, we followed the change of the Au nanoparticles mean versus the annealing time extracting values for the characteristic activation energy of the dewetting process of the Au film on the SiO2 nanowires surface. Such a study can allow the tuning of the nanowires/nanoparticles sizes for desired technological applications.

Effect of size distribution on magnetic properties in cobalt nanowires

NASA Astrophysics Data System (ADS)

Xu, Huanhuan; Wu, Qiong; Yue, Ming; Li, Chenglin; Li, Hongjian; Palaka, Subhashini

2018-05-01

Cobalt nanowires were synthesized by reduction of carboxylate salts of Co in 1, 2-butanediol using a solvothermal chemical process. These nanowires crystallize with the hcp structure and the growth axis is parallel to the crystallographic c-axis. The morphology of the nanowires that prepared with mechanical stirring during earlier stage of the reaction process exhibits a smaller averaged aspect ratio but narrow size distribution. The assembly of the nanowires that prepared with mechanical stirring shows almost same coercivity and remanent magnetization but 59% increase of magnetic energy product. This remarkable improvement of energy product has been further understood by micromagnetic simulations. The magnetic performance at variant temperatures of Co nanowires has also been presented. These ferromagnetic nanowires could be new ideal building blocks for permanent magnets with high performance and high thermal stability.

Silicon Nanowire Growth at Chosen Positions and Orientations

NASA Technical Reports Server (NTRS)

Getty, Stephanie A.

2009-01-01

It is now possible to grow silicon nanowires at chosen positions and orientations by a method that involves a combination of standard microfabrication processes. Because their positions and orientations can be chosen with unprecedented precision, the nanowires can be utilized as integral parts of individually electronically addressable devices in dense arrays. Nanowires made from silicon and perhaps other semiconductors hold substantial promise for integration into highly miniaturized sensors, field-effect transistors, optoelectronic devices, and other electronic devices. Like bulk semiconductors, inorganic semiconducting nanowires are characterized by electronic energy bandgaps that render them suitable as means of modulating or controlling electronic signals through electrostatic gating, in response to incident light, or in response to molecules of interest close to their surfaces. There is now potential for fabricating arrays of uniform, individually electronically addressable nanowires tailored to specific applications. The method involves formation of metal catalytic particles at the desired positions on a substrate, followed by heating the substrate in the presence of silane gas. The figure illustrates an example in which a substrate includes a silicon dioxide surface layer that has been etched into an array of pillars and the catalytic (in this case, gold) particles have been placed on the right-facing sides of the pillars. The catalytic thermal decomposition of the silane to silicon and hydrogen causes silicon columns (the desired nanowires) to grow outward from the originally catalyzed spots on the substrate, carrying the catalytic particles at their tips. Thus, the position and orientation of each silicon nanowire is determined by the position of its originally catalyzed spot on the substrate surface, and the orientation of the nanowire is perpendicular to the substrate surface at the originally catalyzed spot.

Optimization of yield in magnetic cell separations using nickel nanowires of different lengths.

PubMed

Hultgren, Anne; Tanase, Monica; Felton, Edward J; Bhadriraju, Kiran; Salem, Aliasger K; Chen, Christopher S; Reich, Daniel H

2005-01-01

Ferromagnetic nanowires are shown to perform both high yield and high purity single-step cell separations on cultures of NIH-3T3 mouse fibroblast cells. The nanowires are made by electrochemical deposition in nanoporous templates, permitting detailed control of their chemical and physical properties. When added to fibroblast cell cultures, the nanowires are internalized by the cells via the integrin-mediated adhesion pathway. The effectiveness of magnetic cell separations using Ni nanowires 350 nm in diameter and 5-35 micrometers long in field gradients of 40 T/m was compared to commercially available superparamagnetic beads. The percent yield of the separated populations is found to be optimized when the length of the nanowire is matched to the diameter of the cells in the culture. Magnetic cell separations performed under these conditions achieve 80% purity and 85% yield, a 4-fold increase over the beads. This effect is shown to be robust when the diameter of the cell is changed within the same cell line using mitomycin-C.

Adiabatic Edge Channel Transport in a Nanowire Quantum Point Contact Register.

PubMed

Heedt, S; Manolescu, A; Nemnes, G A; Prost, W; Schubert, J; Grützmacher, D; Schäpers, Th

2016-07-13

We report on a prototype device geometry where a number of quantum point contacts are connected in series in a single quasi-ballistic InAs nanowire. At finite magnetic field the backscattering length is increased up to the micron-scale and the quantum point contacts are connected adiabatically. Hence, several input gates can control the outcome of a ballistic logic operation. The absence of backscattering is explained in terms of selective population of spatially separated edge channels. Evidence is provided by regular Aharonov-Bohm-type conductance oscillations in transverse magnetic fields, in agreement with magnetoconductance calculations. The observation of the Shubnikov-de Haas effect at large magnetic fields corroborates the existence of spatially separated edge channels and provides a new means for nanowire characterization.

Majorana states in prismatic core-shell nanowires

NASA Astrophysics Data System (ADS)

Manolescu, Andrei; Sitek, Anna; Osca, Javier; Serra, Llorenç; Gudmundsson, Vidar; Stanescu, Tudor Dan

2017-09-01

We consider core-shell nanowires with conductive shell and insulating core and with polygonal cross section. We investigate the implications of this geometry on Majorana states expected in the presence of proximity-induced superconductivity and an external magnetic field. A typical prismatic nanowire has a hexagonal profile, but square and triangular shapes can also be obtained. The low-energy states are localized at the corners of the cross section, i.e., along the prism edges, and are separated by a gap from higher energy states localized on the sides. The corner localization depends on the details of the shell geometry, i.e., thickness, diameter, and sharpness of the corners. We study systematically the low-energy spectrum of prismatic shells using numerical methods and derive the topological phase diagram as a function of magnetic field and chemical potential for triangular, square, and hexagonal geometries. A strong corner localization enhances the stability of Majorana modes to various perturbations, including the orbital effect of the magnetic field, whereas a weaker localization favorizes orbital effects and reduces the critical magnetic field. The prismatic geometry allows the Majorana zero-energy modes to be accompanied by low-energy states, which we call pseudo Majorana, and which converge to real Majoranas in the limit of small shell thickness. We include the Rashba spin-orbit coupling in a phenomenological manner, assuming a radial electric field across the shell.

Nanowire systems: technology and design

PubMed Central

Gaillardon, Pierre-Emmanuel; Amarù, Luca Gaetano; Bobba, Shashikanth; De Marchi, Michele; Sacchetto, Davide; De Micheli, Giovanni

2014-01-01

Nanosystems are large-scale integrated systems exploiting nanoelectronic devices. In this study, we consider double independent gate, vertically stacked nanowire field effect transistors (FETs) with gate-all-around structures and typical diameter of 20 nm. These devices, which we have successfully fabricated and evaluated, control the ambipolar behaviour of the nanostructure by selectively enabling one type of carriers. These transistors work as switches with electrically programmable polarity and thus realize an exclusive or operation. The intrinsic higher expressive power of these FETs, when compared with standard complementary metal oxide semiconductor technology, enables us to realize more efficient logic gates, which we organize as tiles to realize nanowire systems by regular arrays. This article surveys both the technology for double independent gate FETs as well as physical and logic design tools to realize digital systems with this fabrication technology. PMID:24567471

Quantum optics with nanowires (Conference Presentation)

NASA Astrophysics Data System (ADS)

Zwiller, Val

2017-02-01

Nanowires offer new opportunities for nanoscale quantum optics; the quantum dot geometry in semiconducting nanowires as well as the material composition and environment can be engineered with unprecedented freedom to improve the light extraction efficiency. Quantum dots in nanowires are shown to be efficient single photon sources, in addition because of the very small fine structure splitting, we demonstrate the generation of entangled pairs of photons from a nanowire. By doping a nanowire and making ohmic contacts on both sides, a nanowire light emitting diode can be obtained with a single quantum dot as the active region. Under forward bias, this will act as an electrically pumped source of single photons. Under reverse bias, an avalanche effect can multiply photocurrent and enables the detection of single photons. Another type of nanowire under study in our group is superconducting nanowires for single photon detection, reaching efficiencies, time resolution and dark counts beyond currently available detectors. We will discuss our first attempts at combining semiconducting nanowire based single photon emitters and superconducting nanowire single photon detectors on a chip to realize integrated quantum circuits.

Multiphase mean curvature flows with high mobility contrasts: A phase-field approach, with applications to nanowires

NASA Astrophysics Data System (ADS)

Bretin, Elie; Danescu, Alexandre; Penuelas, José; Masnou, Simon

2018-07-01

The structure of many multiphase systems is governed by an energy that penalizes the area of interfaces between phases weighted by surface tension coefficients. However, interface evolution laws depend also on interface mobility coefficients. Having in mind some applications where highly contrasted or even degenerate mobilities are involved, for which classical phase field models are inapplicable, we propose a new effective phase field approach to approximate multiphase mean curvature flows with mobilities. The key aspect of our model is to incorporate the mobilities not in the phase field energy (which is conventionally the case) but in the metric which determines the gradient flow. We show the consistency of such an approach by a formal analysis of the sharp interface limit. We also propose an efficient numerical scheme which allows us to illustrate the advantages of the model on various examples, as the wetting of droplets on solid surfaces or the simulation of nanowires growth generated by the so-called vapor-liquid-solid method.

Thermoelectric effects in disordered branched nanowires

NASA Astrophysics Data System (ADS)

Roslyak, Oleksiy; Piriatinskiy, Andrei

2013-03-01

We shall develop formalism of thermal and electrical transport in Si1 - x Gex and BiTe nanowires. The key feature of those nanowires is the possibility of dendrimer type branching. The branching tree can be of size comparable to the short wavelength of phonons and by far smaller than the long wavelength of conducting electrons. Hence it is expected that the branching may suppress thermal and let alone electrical conductance. We demonstrate that the morphology of branches strongly affects the electronic conductance. The effect is important to the class of materials known as thermoelectrics. The small size of the branching region makes large temperature and electrical gradients. On the other hand the smallness of the region would allow the electrical transport being ballistic. As usual for the mesoscopic systems we have to solve macroscopic (temperature) and microscopic ((electric potential, current)) equations self-consistently. Electronic conductance is studied via NEGF formalism on the irreducible electron transfer graph. We also investigate the figure of merit ZT as a measure of the suppressed electron conductance.

The Mechanical Properties of Nanowires

PubMed Central

Wang, Shiliang; Shan, Zhiwei

2017-01-01

Applications of nanowires into future generation nanodevices require a complete understanding of the mechanical properties of the nanowires. A great research effort has been made in the past two decades to understand the deformation physics and mechanical behaviors of nanowires, and to interpret the discrepancies between experimental measurements and theoretical predictions. This review focused on the characterization and understanding of the mechanical properties of nanowires, including elasticity, plasticity, anelasticity and strength. As the results from the previous literature in this area appear inconsistent, a critical evaluation of the characterization techniques and methodologies were presented. In particular, the size effects of nanowires on the mechanical properties and their deformation mechanisms were discussed. PMID:28435775

Integrated amplifying nanowire FET for surface and bulk sensing

NASA Astrophysics Data System (ADS)

Chui, Chi On; Shin, Kyeong-Sik

2011-10-01

For over one decade, numerous research have been performed on field-effect transistor (FET) sensors with a quasi-onedimensional (1D) nanostructure channel demonstrating highly sensitive surface and bulk sensing. The high surface and bulk sensing sensitivity respectively arises from the inherently large surface area-to-volume ratio and tiny channel volume. The generic nanowire FET sensors, however, have limitations such as impractically low output current levels especially near the limit of detection (LOD) that would require downstream remote amplification with an appreciable amount of added noise. We have recently proposed and experimentally demonstrated an innovative amplifying nanowire FET sensor structure that seamlessly integrates therein a sensing nanowire and a nanowire FET amplifier. This novel sensor structure embraces the same geometrical advantage in quasi-1D nanostructure yet it offers unprecedented closeproximity signal amplification with the lowest possible added noise. In this paper, we review the device operating principle and amplification mechanism. We also present the prototype fabrication procedures, and surface and bulk sensing experimental results showing significantly enhanced output current level difference as predicted.

Effect of diameter of metal nanowires on pool boiling heat transfer with FC-72

NASA Astrophysics Data System (ADS)

Kumar G., Udaya; S., Suresh; M. R., Thansekhar; Babu P., Dinesh

2017-11-01

Effect of varying diameter of metal nanowires on pool boiling heat transfer performance is presented in this study. Copper nanowires (CuNWs) of four different diameters (∼35 nm, ∼70 nm, ∼130 nm and ∼200 nm) were grown directly on copper specimen using template-based electrodeposition technique. Both critical heat flux (CHF) and boiling heat transfer coefficient (h) were found to be improved in surfaces with nanowires as compared to the bare copper surface. Moreover, both the parameters were found to increase with increasing diameter of the nanowires. The percentage increases observed in CHF for the samples with nanowires were 38.37%, 40.16%, 48.48% and 45.57% whereas the percentage increase in the heat transfer coefficient were 86.36%, 95.45%, 184.1% and 131.82% respectively as compared to the bare copper surface. Important reasons believed for this enhancement were improvement in micron scale cavity density and cavity size which arises as a result of the coagulation and grouping of nanowires during the drying process. In addition to this, superhydrophilic nature, capillary effect, and enhanced bubble dynamics parameters (bubble frequency, bubble departure diameter, and nucleation site density) were found to be the concurring mechanisms responsible for this enhancement in heat transfer performance. Qualitative bubble dynamics analysis was done for the surfaces involved and the visual observations are provided to support the results presented and discussed.

Nature of magnetization and lateral spin-orbit interaction in gated semiconductor nanowires.

PubMed

Karlsson, H; Yakimenko, I I; Berggren, K-F

2018-05-31

Semiconductor nanowires are interesting candidates for realization of spintronics devices. In this paper we study electronic states and effects of lateral spin-orbit coupling (LSOC) in a one-dimensional asymmetrically biased nanowire using the Hartree-Fock method with Dirac interaction. We have shown that spin polarization can be triggered by LSOC at finite source-drain bias,as a result of numerical noise representing a random magnetic field due to wiring or a random background magnetic field by Earth magnetic field, for instance. The electrons spontaneously arrange into spin rows in the wire due to electron interactions leading to a finite spin polarization. The direction of polarization is, however, random at zero source-drain bias. We have found that LSOC has an effect on orientation of spin rows only in the case when source-drain bias is applied.

Nature of magnetization and lateral spin–orbit interaction in gated semiconductor nanowires

NASA Astrophysics Data System (ADS)

Karlsson, H.; Yakimenko, I. I.; Berggren, K.-F.

2018-05-01

Semiconductor nanowires are interesting candidates for realization of spintronics devices. In this paper we study electronic states and effects of lateral spin–orbit coupling (LSOC) in a one-dimensional asymmetrically biased nanowire using the Hartree–Fock method with Dirac interaction. We have shown that spin polarization can be triggered by LSOC at finite source-drain bias,as a result of numerical noise representing a random magnetic field due to wiring or a random background magnetic field by Earth magnetic field, for instance. The electrons spontaneously arrange into spin rows in the wire due to electron interactions leading to a finite spin polarization. The direction of polarization is, however, random at zero source-drain bias. We have found that LSOC has an effect on orientation of spin rows only in the case when source-drain bias is applied.

Programmable nanowire circuits for nanoprocessors.

PubMed

Yan, Hao; Choe, Hwan Sung; Nam, SungWoo; Hu, Yongjie; Das, Shamik; Klemic, James F; Ellenbogen, James C; Lieber, Charles M

2011-02-10

A nanoprocessor constructed from intrinsically nanometre-scale building blocks is an essential component for controlling memory, nanosensors and other functions proposed for nanosystems assembled from the bottom up. Important steps towards this goal over the past fifteen years include the realization of simple logic gates with individually assembled semiconductor nanowires and carbon nanotubes, but with only 16 devices or fewer and a single function for each circuit. Recently, logic circuits also have been demonstrated that use two or three elements of a one-dimensional memristor array, although such passive devices without gain are difficult to cascade. These circuits fall short of the requirements for a scalable, multifunctional nanoprocessor owing to challenges in materials, assembly and architecture on the nanoscale. Here we describe the design, fabrication and use of programmable and scalable logic tiles for nanoprocessors that surmount these hurdles. The tiles were built from programmable, non-volatile nanowire transistor arrays. Ge/Si core/shell nanowires coupled to designed dielectric shells yielded single-nanowire, non-volatile field-effect transistors (FETs) with uniform, programmable threshold voltages and the capability to drive cascaded elements. We developed an architecture to integrate the programmable nanowire FETs and define a logic tile consisting of two interconnected arrays with 496 functional configurable FET nodes in an area of ∼960 μm(2). The logic tile was programmed and operated first as a full adder with a maximal voltage gain of ten and input-output voltage matching. Then we showed that the same logic tile can be reprogrammed and used to demonstrate full-subtractor, multiplexer, demultiplexer and clocked D-latch functions. These results represent a significant advance in the complexity and functionality of nanoelectronic circuits built from the bottom up with a tiled architecture that could be cascaded to realize fully integrated

Lithographically fabricated gold nanowire waveguides for plasmonic routers and logic gates.

PubMed

Gao, Long; Chen, Li; Wei, Hong; Xu, Hongxing

2018-06-14

Fabricating plasmonic nanowire waveguides and circuits by lithographic fabrication methods is highly desired for nanophotonic circuitry applications. Here we report an approach for fabricating metal nanowire networks by using electron beam lithography and metal film deposition techniques. The gold nanowire structures are fabricated on quartz substrates without using any adhesion layer but coated with a thin layer of Al2O3 film for immobilization. The thermal annealing during the Al2O3 deposition process decreases the surface plasmon loss. In a Y-shaped gold nanowire network, the surface plasmons can be routed to different branches by controlling the polarization of the excitation light, and the routing behavior is dependent on the length of the main nanowire. Simulated electric field distributions show that the zigzag distribution of the electric field in the nanowire network determines the surface plasmon routing. By using two laser beams to excite surface plasmons in a Y-shaped nanowire network, the output intensity can be modulated by the interference of surface plasmons, which can be used to design Boolean logic gates. We experimentally demonstrate that AND, OR, XOR and NOT gates can be realized in three-terminal nanowire networks, and NAND, NOR and XNOR gates can be realized in four-terminal nanowire networks. This work takes a step toward the fabrication of on-chip integrated plasmonic circuits.

Characterization of individual straight and kinked boron carbide nanowires

NASA Astrophysics Data System (ADS)

Cui, Zhiguang

axes where stacking faults are invisible. In collaboration with the experts in the field of thermal property characterization of one dimensional nanostructures, thermal conductivities of over 60 nanowires including both straight and kinked ones have been measured in the temperature range of 20 - 420 K and the parameters (i.e., carbon contents, diameters, stacking faults densities/orientations and kinks) affecting the phonon transport were explored. The results disclose strong carbon content and diameter dependence of thermal conductivities of boron carbide nanowires, which decreases as lowering the carbon content and diameter. Stacking fault orientations do modulate the phonon transport (kappaTF < kappa AF), while stacking fault densities seems to only have obvious effects on phonon transport when meeting certain threshold ( 39%). The most interesting discovery is significant reduction of thermal conductivity (15% - 40%) in kinked boron carbide nanowires due to phonon mode conversions and scattering at the kink site. Last but not least, micro-Raman spectroscopy study on individual boron carbide nanowires has been performed for the first time, to the best of our knowledge. Based on the preliminary data, it is found that the stacking fault orientations have no apparent effect on the Raman scattering, but the stacking fault densities do. In addition, up as the size going down to nanoscale, some Raman modes are inactive while some new ones show up, which is largely ascribed to the quantum confinement effects. One more important finding is that the carbon content also plays important role in the Raman scattering of boron carbide nanowires in the low frequency region (< 600 cm-1), which mainly comes from the 3-atom chains (C-B-C or C-B-B).

A room temperature ethanol sensor made from p-type Sb-doped SnO2 nanowires.

PubMed

Wu, Jyh Ming

2010-06-11

A p-type ethanol sensor with a response time of approximately 8.3 s at room temperature was produced by SnO(2):Sb nanowires. The electrical properties of p-type SnO(2) nanowires are stable with a hole concentration of 1.544 x 10(17) cm(-3) and a field-effect mobility of 22 cm(2) V(-2) S(-1). X-ray photoelectron spectroscopy (XPS) and Hall measurement revealed that as-synthesized nanowires exhibit p-type behavior. A comprehensive investigation of the p-type sensing mechanism is reported.

Plasmonic Behavior of Ag/Dielectric Nanowires and the Effect of Geometry

DTIC Science & Technology

2009-07-01

in- cluding random Ga2O3 nanowires, ZnO nanowires, as well as Au lines produced by e-beam lithography. The growth of the Ga2O3 nanowires was achieved...PLASMONIC PROPERTIES As discussed above, we have developed a SERS substrate, consisting of Ga2O3 nanowire core/Ag metal sheath nano- structures, which have...signal. As is evident, the nanowire composites are about two orders of magnitude more sensitive than the Mesophotonics substrate. Since these Ga2O3 /Ag

Surface diffusion effects on growth of nanowires by chemical beam epitaxy

NASA Astrophysics Data System (ADS)

Persson, A. I.; Fröberg, L. E.; Jeppesen, S.; Björk, M. T.; Samuelson, L.

2007-02-01

Surface processes play a large role in the growth of semiconductor nanowires by chemical beam epitaxy. In particular, for III-V nanowires the surface diffusion of group-III species is important to understand in order to control the nanowire growth. In this paper, we have grown InAs-based nanowires positioned by electron beam lithography and have investigated the dependence of the diffusion of In species on temperature, group-III and -V source pressure and group-V source combinations by measuring nanowire growth rate for different nanowire spacings. We present a model which relates the nanowire growth rate to the migration length of In species. The model is fitted to the experimental data for different growth conditions, using the migration length as fitting parameter. The results show that the migration length increases with decreasing temperature and increasing group-V/group-III source pressure ratio. This will most often lead to an increase in growth rate, but deviations will occur due to incomplete decomposition and changes in sticking coefficient for group-III species. The results also show that the introduction of phosphorous precursor for growth of InAs1-xPx nanowires decreases the migration length of the In species followed by a decrease in nanowire growth rate.

Optimisation of preparation conditions for Ti nanowires and suitability as an antibacterial material.

PubMed

Munisparan, Thivyah; Yang, Evyan Chia Yan; Paramasivam, Ragul; Dahlan, Nuraina Anisa; Pushpamalar, Janarthanan

2018-06-01

Ultrafine titanium dioxide (TiO 2 ) nanowires were synthesised using a hydrothermal method with different volumes of ethylene glycol (EG) and annealing temperatures. It shows that sodium titanate nanowires synthesised using 5 and 10 ml EG, which annealed at 400°C produced TiO 2 nanowires that correspond to a photochemically active phase, which is anatase. The influences of annealing temperatures (400-600°C) on the morphological arrangement of TiO 2 nanowires were evident in the field emission scanning electron microscopy. The annealing temperature of 500°C led to agglomeration, which formed a mixture of TiO 2 nanoparticles and nanowires. High thermal stability of TiO 2 nanowires revealed by thermogravimetric analysis and Fourier transform infrared spectroscopy spectrum showed the presence of the Ti-O-Ti vibrations as evidenced due to TiO 2 lattices. An antibacterial study using TiO 2 nanowires toward Escherichia coli and Klebsiella pneumoniae showed large zones of inhibition that indicated susceptibility of the microbe toward TiO 2 . Growth kinetic analysis shows that addition of TiO 2 has reduced optical density (OD) suggesting an inhibition of the growth of bacteria. These results indicate TiO 2 nanowires can be effectively used as an antimicrobial agent against gram-bacteria. The TiO 2 nanowires could be exploited in the medical, packaging and detergent formulation industries and wastewater treatment.

Compositional disorder and its effect on the thermoelectric performance of Zn₃P₂ nanowire-copper nanoparticle composites.

PubMed

Brockway, Lance; Vasiraju, Venkata; Vaddiraju, Sreeram

2014-03-28

Recent studies indicated that nanowire format of materials is ideal for enhancing the thermoelectric performance of materials. Most of these studies were performed using individual nanowires as the test elements. It is not currently clear whether bulk assemblies of nanowires replicate this enhanced thermoelectric performance of individual nanowires. Therefore, it is imperative to understand whether enhanced thermoelectric performance exhibited by individual nanowires can be extended to bulk assemblies of nanowires. It is also imperative to know whether the addition of metal nanoparticle to semiconductor nanowires can be employed for enhancing their thermoelectric performance further. Specifically, it is important to understand the effect of microstructure and composition on the thermoelectric performance on bulk compound semiconductor nanowire-metal nanoparticle composites. In this study, bulk composites composed of mixtures of copper nanoparticles with either unfunctionalized or 1,4-benzenedithiol (BDT) functionalized Zn₃P₂ nanowires were fabricated and analyzed for their thermoelectric performance. The results indicated that use of BDT functionalized nanowires for the fabrication of composites leads to interface-engineered composites that have uniform composition all across their cross-section. The interface engineering allows for increasing their Seebeck coefficients and electrical conductivities, relative to the Zn₃P₂ nanowire pellets. In contrast, the use of unfunctionalized Zn₃P₂ nanowires for the fabrication of composite leads to the formation of composites that are non-uniform in composition across their cross-section. Ultimately, the composites were found to have Zn₃P₂ nanowires interspersed with metal alloy nanoparticles. Such non-uniform composites exhibited very high electrical conductivities, but slightly lower Seebeck coefficients, relative to Zn₃P₂ nanowire pellets. These composites were found to show a very high zT of 0.23 at 770

Quantum dots coupled ZnO nanowire-array panels and their photocatalytic activities.

PubMed

Liao, Yulong; Que, Wenxiu; Zhang, Jin; Zhong, Peng; Yuan, Yuan; Qiu, Xinku; Shen, Fengyu

2013-02-01

Fabrication and characterization of a heterojunction structured by CdS quantum dots@ZnO nanowire-array panels were presented. Firstly, ZnO nanowire-array panels were prepared by using a chemical bath deposition approach where wurtzite ZnO nanowires with a diameter of about 100 nm and 3 microm in length grew perpendicularly to glass substrate. Secondly, CdS quantum dots were deposited onto the surface of the ZnO nanowire-arrays by using successive ion layer absorption and reaction method, and the CdS shell/ZnO core heterojunction were thus obtained. Field emission scanning electron microscopy and transmission electron microscope were employed to characterize the morphological properties of the as-obtained CdS quantum dots@ZnO nanowire-array panels. X-ray diffraction was adopted to characterize the crystalline properties of the as-obtained CdS quantum dots@ZnO nanowire-array panels. Methyl orange was taken as a model compound to confirm the photocatalytic activities of the CdS shell/ZnO core heterojunction. Results indicate that CdS with narrow band gap not only acts as a visible-light sensitizer but also is responsible for an effective charge separation.

Effect of gate bias sweep rate on the threshold voltage of in-plane gate nanowire transistor

NASA Astrophysics Data System (ADS)

Liu, H. X.; Li, J.; Tan, R. R.

2018-01-01

In2O3 nanowire electric-double-layer (EDL) transistors with in-plane gate gated by SiO2 solid-electrolyte are fabricated on transparent glass substrates. The gate voltage sweep rates can effectively modulate the threshold voltage (Vth) of nanowire device. Both depletion mode and enhancement mode are realized, and the Vth shift of the nanowire transistors is estimated to be 0.73V (without light). This phenomenon is due to increased adsorption of oxygen on the nanowire surface by the slower gate voltage sweep rates. Adsorbed oxygens capture electrons and cause a surface of nanowire channel was depleted. The operation voltage of transistor was 1.0 V, because the EDL gate dielectric can lead to high gate dielectric capacitance. These transparent in-plane gate nanowire transistors are promising for “see-through” nanoscale sensors.

Bandgap engineering of GaN nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ming, Bang-Ming; Yan, Hui; Wang, Ru-Zhi, E-mail: wrz@bjut.edu.cn, E-mail: yamcy@csrc.ac.cn

2016-05-15

Bandgap engineering has been a powerful technique for manipulating the electronic and optical properties of semiconductors. In this work, a systematic investigation of the electronic properties of [0001] GaN nanowires was carried out using the density functional based tight-binding method (DFTB). We studied the effects of geometric structure and uniaxial strain on the electronic properties of GaN nanowires with diameters ranging from 0.8 to 10 nm. Our results show that the band gap of GaN nanowires depends linearly on both the surface to volume ratio (S/V) and tensile strain. The band gap of GaN nanowires increases linearly with S/V, whilemore » it decreases linearly with increasing tensile strain. These linear relationships provide an effect way in designing GaN nanowires for their applications in novel nano-devices.« less

Bi nanowire-based thermal biosensor for the detection of salivary cortisol using the Thomson effect

NASA Astrophysics Data System (ADS)

Lee, Seunghyun; Hyun Lee, Jung; Kim, MinGin; Kim, Jeongmin; Song, Min-Jung; Jung, Hyo-Il; Lee, Wooyoung

2013-09-01

We present a study of a thermal biosensor based on bismuth nanowire that is fabricated for the detection of the human stress hormone cortisol using the Thomson effect. The Bi nanowire was grown using the On-Film Formation of Nanowires (OFF-ON) method. The thermal device was fabricated using photolithography, and the sensing area was modified with immobilized anti-cortisol antibodies conjugated with protein G for the detection of cortisol. The voltages were measured with two probe tips during surface modification to investigate the biochemical reactions in the fabricated thermal biosensor. The Bi nanowire-based thermal biosensor exhibited low detection limit and good selectivity for the detection of cortisol.

Optical properties of nanowire metamaterials with gain

NASA Astrophysics Data System (ADS)

Lima, Joaquim; Adam, Jost; Rego, Davi; Esquerre, Vitaly; Bordo, Vladimir

2016-11-01

The transmittance, reflectance and absorption of a nanowire metamaterial with optical gain are numerically simulated and investigated. It is assumed that the metamaterial is represented by aligned silver nanowires embedded into a semiconductor matrix, made of either silicon or gallium phosphide. The gain in the matrix is modeled by adding a negative imaginary part to the dielectric function of the semiconductor. It is found that the optical coefficients of the metamaterial depend on the gain magnitude in a non-trivial way: they can both increase and decrease with gain depending on the lattice constant of the metamaterial. This peculiar behavior is explained by the field redistribution between the lossy metal nanowires and the amplifying matrix material. These findings are significant for a proper design of nanowire metamaterials with low optical losses for diverse applications.

Stable Defects in Semiconductor Nanowires.

PubMed

Sanchez, A M; Gott, J A; Fonseka, H A; Zhang, Y; Liu, H; Beanland, R

2018-05-09

Semiconductor nanowires are commonly described as being defect-free due to their ability to expel mobile defects with long-range strain fields. Here, we describe previously undiscovered topologically protected line defects with null Burgers vector that, unlike dislocations, are stable in nanoscale crystals. We analyze the defects present in semiconductor nanowires in regions of imperfect crystal growth, i.e., at the nanowire tip formed during consumption of the droplet in self-catalyzed vapor-liquid-solid growth and subsequent vapor-solid shell growth. We use a form of the Burgers circuit method that can be applied to multiply twinned material without difficulty. Our observations show that the nanowire microstructure is very different from bulk material, with line defects either (a) trapped by locks or other defects, (b) arranged as dipoles or groups with a zero total Burgers vector, or (c) have a zero Burgers vector. We find two new line defects with a null Burgers vector, formed from the combination of partial dislocations in twinned material. The most common defect is the three-monolayer high twin facet with a zero Burgers vector. Studies of individual nanowires using cathodoluminescence show that optical emission is quenched in defective regions, showing that they act as strong nonradiative recombination centers.

Single-Nanowire Electrochemical Probe Detection for Internally Optimized Mechanism of Porous Graphene in Electrochemical Devices.

PubMed

Hu, Ping; Yan, Mengyu; Wang, Xuanpeng; Han, Chunhua; He, Liang; Wei, Xiujuan; Niu, Chaojiang; Zhao, Kangning; Tian, Xiaocong; Wei, Qiulong; Li, Zijia; Mai, Liqiang

2016-03-09

Graphene has been widely used to enhance the performance of energy storage devices due to its high conductivity, large surface area, and excellent mechanical flexibility. However, it is still unclear how graphene influences the electrochemical performance and reaction mechanisms of electrode materials. The single-nanowire electrochemical probe is an effective tool to explore the intrinsic mechanisms of the electrochemical reactions in situ. Here, pure MnO2 nanowires, reduced graphene oxide/MnO2 wire-in-scroll nanowires, and porous graphene oxide/MnO2 wire-in-scroll nanowires are employed to investigate the capacitance, ion diffusion coefficient, and charge storage mechanisms in single-nanowire electrochemical devices. The porous graphene oxide/MnO2 wire-in-scroll nanowire delivers an areal capacitance of 104 nF/μm(2), which is 4.0 and 2.8 times as high as those of reduced graphene oxide/MnO2 wire-in-scroll nanowire and MnO2 nanowire, respectively, at a scan rate of 20 mV/s. It is demonstrated that the reduced graphene oxide wrapping around the MnO2 nanowire greatly increases the electronic conductivity of the active materials, but decreases the ion diffusion coefficient because of the shielding effect of graphene. By creating pores in the graphene, the ion diffusion coefficient is recovered without degradation of the electron transport rate, which significantly improves the capacitance. Such single-nanowire electrochemical probes, which can detect electrochemical processes and behavior in situ, can also be fabricated with other active materials for energy storage and other applications in related fields.

Hierarchically structured nanowires on and nanosticks in ZnO microtubes

PubMed Central

Rivaldo-Gómez, C. M.; Cabrera-Pasca, G. A.; Zúñiga, A.; Carbonari, A. W.; Souza, J. A.

2015-01-01

We report both coaxial core-shell structured microwires and ZnO microtubes with growth of nanosticks in the inner and nanowires on the outer surface as a novel hierarchical micro/nanoarchitecture. First, a core-shell structure is obtained—the core is formed by metallic Zn and the semiconducting shell is comprised by a thin oxide layer covered with a high density of nanowires. Such Zn/ZnO core-shell array showed magnetoresistance effect. It is suggested that magnetic moments in the nanostructured shell superimposes to the external magnetic field enhancing the MR effect. Second, microtubes decorated with nanowires on the external surface are obtained. In an intermediate stage, a hierarchical morphology comprised of discrete nanosticks in the inner surface of the microtube has been found. Hyperfine interaction measurements disclosed the presence of confined metallic Zn regions at the interface between linked ZnO grains forming a chain and a ZnO thicker layer. Surprisingly, the metallic clusters form highly textured thin flat regions oriented parallel to the surface of the microtube as revealed by the electrical field gradient direction. The driving force to grow the internal nanosticks has been ascribed to stress-induced migration of Zn ions due to compressive stress caused by the presence of these confined regions. PMID:26456527

Dependence of Internal Crystal Structures of InAs Nanowires on Electrical Characteristics of Field Effect Transistors

NASA Astrophysics Data System (ADS)

Han, Sangmoon; Choi, Ilgyu; Lee, Kwanjae; Lee, Cheul-Ro; Lee, Seoung-Ki; Hwang, Jeongwoo; Chung, Dong Chul; Kim, Jin Soo

2018-02-01

We report on the dependence of internal crystal structures on the electrical properties of a catalyst-free and undoped InAs nanowire (NW) formed on a Si(111) substrate by metal-organic chemical vapor deposition. Cross-sectional transmission electron microscopy images, obtained from four different positions of a single InAs NW, indicated that the wurtzite (WZ) structure with stacking faults was observed mostly in the bottom region of the NW. Vertically along the InAs NW, the amount of stacking faults decreased and a zinc-blende (ZB) structure was observed. At the top of the NW, the ZB structure was prominently observed. The resistance and resistivity of the top region of the undoped InAs NW with the ZB structure were measured to be 121.5 kΩ and 0.19 Ω cm, respectively, which are smaller than those of the bottom region with the WZ structure, i.e., 251.8 kΩ and 0.39 Ω cm, respectively. The reduction in the resistance of the top region of the NW is attributed to the improvement in the crystal quality and the change in the ZB crystal structure. For a field effect transistor with an undoped InAs NW channel, the drain current versus drain-source voltage characteristic curves under various negative gate-source voltages were successfully observed at room temperature.

Nanowire Electron Scattering Spectroscopy

NASA Technical Reports Server (NTRS)

Hunt, Brian; Bronikowsky, Michael; Wong, Eric; VonAllmen, Paul; Oyafuso, Fablano

2009-01-01

Nanowire electron scattering spectroscopy (NESS) has been proposed as the basis of a class of ultra-small, ultralow-power sensors that could be used to detect and identify chemical compounds present in extremely small quantities. State-of-the-art nanowire chemical sensors have already been demonstrated to be capable of detecting a variety of compounds in femtomolar quantities. However, to date, chemically specific sensing of molecules using these sensors has required the use of chemically functionalized nanowires with receptors tailored to individual molecules of interest. While potentially effective, this functionalization requires labor-intensive treatment of many nanowires to sense a broad spectrum of molecules. In contrast, NESS would eliminate the need for chemical functionalization of nanowires and would enable the use of the same sensor to detect and identify multiple compounds. NESS is analogous to Raman spectroscopy, the main difference being that in NESS, one would utilize inelastic scattering of electrons instead of photons to determine molecular vibrational energy levels. More specifically, in NESS, one would exploit inelastic scattering of electrons by low-lying vibrational quantum states of molecules attached to a nanowire or nanotube.

Piezo-Phototronic Matrix via a Nanowire Array.

PubMed

Zhang, Yang; Zhai, Junyi; Wang, Zhong Lin

2017-12-01

Piezoelectric semiconductors, such as ZnO and GaN, demonstrate multiproperty coupling effects toward various aspects of mechanical, electrical, and optical excitation. In particular, the three-way coupling among semiconducting, photoexcitation, and piezoelectric characteristics in wurtzite-structured semiconductors is established as a new field, which was first coined as piezo-phototronics by Wang in 2010. The piezo-phototronic effect can controllably modulate the charge-carrier generation, separation, transport, and/or recombination in optical-electronic processes by modifying the band structure at the metal-semiconductor or semiconductor-semiconductor heterojunction/interface. Here, the progress made in using the piezo-phototronic effect for enhancing photodetectors, pressure sensors, light-emitting diodes, and solar cells is reviewed. In comparison with previous works on a single piezoelectric semiconducting nanowire, piezo-phototronic nanodevices built using nanowire arrays provide a promising platform for fabricating integrated optoelectronics with the realization of high-spatial-resolution imaging and fast responsivity. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Interference lithographically defined and catalytically etched, large-area silicon nanocones from nanowires.

PubMed

Dawood, M K; Liew, T H; Lianto, P; Hong, M H; Tripathy, S; Thong, J T L; Choi, W K

2010-05-21

We report a simple and cost effective method for the synthesis of large-area, precisely located silicon nanocones from nanowires. The nanowires were obtained from our interference lithography and catalytic etching (IL-CE) method. We found that porous silicon was formed near the Au catalyst during the fabrication of the nanowires. The porous silicon exhibited enhanced oxidation ability when exposed to atmospheric conditions or in wet oxidation ambient. Very well located nanocones with uniform sharpness resulted when these oxidized nanowires were etched in 10% HF. Nanocones of different heights were obtained by varying the doping concentration of the silicon wafers. We believe this is a novel method of producing large-area, low cost, well defined nanocones from nanowires both in terms of the control of location and shape of the nanocones. A wide range of potential applications of the nanocone array can be found as a master copy for nanoimprinted polymer substrates for possible biomedical research; as a candidate for making sharp probes for scanning probe nanolithography; or as a building block for field emitting tips or photodetectors in electronic/optoelectronic applications.

Functionalised zinc oxide nanowire gas sensors: Enhanced NO(2) gas sensor response by chemical modification of nanowire surfaces.

PubMed

Waclawik, Eric R; Chang, Jin; Ponzoni, Andrea; Concina, Isabella; Zappa, Dario; Comini, Elisabetta; Motta, Nunzio; Faglia, Guido; Sberveglieri, Giorgio

2012-01-01

Surface coating with an organic self-assembled monolayer (SAM) can enhance surface reactions or the absorption of specific gases and hence improve the response of a metal oxide (MOx) sensor toward particular target gases in the environment. In this study the effect of an adsorbed organic layer on the dynamic response of zinc oxide nanowire gas sensors was investigated. The effect of ZnO surface functionalisation by two different organic molecules, tris(hydroxymethyl)aminomethane (THMA) and dodecanethiol (DT), was studied. The response towards ammonia, nitrous oxide and nitrogen dioxide was investigated for three sensor configurations, namely pure ZnO nanowires, organic-coated ZnO nanowires and ZnO nanowires covered with a sparse layer of organic-coated ZnO nanoparticles. Exposure of the nanowire sensors to the oxidising gas NO(2) produced a significant and reproducible response. ZnO and THMA-coated ZnO nanowire sensors both readily detected NO(2) down to a concentration in the very low ppm range. Notably, the THMA-coated nanowires consistently displayed a small, enhanced response to NO(2) compared to uncoated ZnO nanowire sensors. At the lower concentration levels tested, ZnO nanowire sensors that were coated with THMA-capped ZnO nanoparticles were found to exhibit the greatest enhanced response. ΔR/R was two times greater than that for the as-prepared ZnO nanowire sensors. It is proposed that the ΔR/R enhancement in this case originates from the changes induced in the depletion-layer width of the ZnO nanoparticles that bridge ZnO nanowires resulting from THMA ligand binding to the surface of the particle coating. The heightened response and selectivity to the NO(2) target are positive results arising from the coating of these ZnO nanowire sensors with organic-SAM-functionalised ZnO nanoparticles.

Anomalous magnetic properties of 7 nm single-crystal Co3O4 nanowires

NASA Astrophysics Data System (ADS)

Lv, Ping; Zhang, Yan; Xu, Rui; Nie, Jia-Cai; He, Lin

2012-01-01

We present a study of magnetic properties of single-crystal Co3O4 nanowires with diameter about 7 nm. The nanowires expose (111) planes composed of plenty of Co3+ cations and exhibit two order temperatures at 56 K (TN of wire cores) and 73 K (order temperature of wire shells), which are far above TN = 40 K of bulk Co3O4. This novel behavior is attributed to symmetry breaking of surface Co3+ cations and magnetic proximity effect. The nanowire shells show macroscopic residual magnetic moments. Cooling in a magnetic field, a fraction of the residual moments are tightly pinned to the antiferromagnetic lattice, which results in an obvious horizontal and vertical shift of hysteresis loop. Our experiment demonstrates that the exchange bias field HE and the pinned magnetic moments Mpin follow a simple expression HE = aMpin with a a constant.

Interactions between semiconductor nanowires and living cells.

PubMed

Prinz, Christelle N

2015-06-17

Semiconductor nanowires are increasingly used for biological applications and their small dimensions make them a promising tool for sensing and manipulating cells with minimal perturbation. In order to interface cells with nanowires in a controlled fashion, it is essential to understand the interactions between nanowires and living cells. The present paper reviews current progress in the understanding of these interactions, with knowledge gathered from studies where living cells were interfaced with vertical nanowire arrays. The effect of nanowires on cells is reported in terms of viability, cell-nanowire interface morphology, cell behavior, changes in gene expression as well as cellular stress markers. Unexplored issues and unanswered questions are discussed.

Electron Transport Properties of Ge nanowires

NASA Astrophysics Data System (ADS)

Hanrath, Tobias; Khondaker, Saiful I.; Yao, Zhen; Korgel, Brian A.

2003-03-01

Electron Transport Properties of Ge nanowires Tobias Hanrath*, Saiful I. Khondaker, Zhen Yao, Brian A. Korgel* *Dept. of Chemical Engineering, Dept. of Physics, Texas Materials Institute, and Center for Nano- and Molecular Science and Technology University of Texas at Austin, Austin, Texas 78712-1062 e-mail: korgel@mail.che.utexas.edu Germanium (Ge) nanowires with diameters ranging from 6 to 50 nm and several micrometer in length were grown via a supercritical fluid-liquid-solid synthesis. Parallel electron energy loss spectroscopy (PEELS) was employed to study the band structure and electron density in the Ge nanowires. The observed increase in plasmon peak energy and peak width with decreasing nanowire diameter is attributed to quantum confinement effects. For electrical characterization, Ge nanowires were deposited onto a patterned Si/SiO2 substrate. E-beam lithography was then used to form electrode contacts to individual nanowires. The influence of nanowire diameter, surface chemistry and crystallographic defects on electron transport properties were investigated and the comparison of Ge nanowire conductivity with respect to bulk, intrinsic Ge will be presented.

Cooperative nucleation modes in polycrystalline CoxPd1-x nanowires

NASA Astrophysics Data System (ADS)

Viqueira, M. S.; Pozo-López, G.; Urreta, S. E.; Condó, A. M.; Cornejo, D. R.; Fabietti, L. M.

2015-05-01

Polycrystalline CoxPd1-x (x = 1, 0.60, 0.45, 0.23, and 0.11) cylindrical nanowires (ø = 18-35 nm, about 1 μm length) are produced by AC electrodeposition into hexagonally ordered alumina pores. Single-phase nanowires of an fcc Co-Pd solid solution, with randomly oriented equiaxed grains (7-12 nm) are obtained; in all the cases, the grain size is smaller than the wire diameter. The coercive field and the reduced remanence of Co-rich nanowire arrays are hardly sensitive to temperature within the range varying from 4 K to 300 K. On the other hand, in Pd-rich nanowires both magnitudes are smaller and they largely increase when cooling below 100 K. This behavior also depends on the mean grain size. These facts are systematized considering two main aspects: the non-trivial temperature and composition dependence of the crystalline anisotropy and the saturation magnetostriction in Co-Pd alloys; and a random anisotropy effect, which defines a nucleation localization length that may involve more than a single grain, and thus promotes more cooperative nucleation modes.

Ferromagnetic germanide in Ge nanowire transistors for spintronics application.

PubMed

Tang, Jianshi; Wang, Chiu-Yen; Hung, Min-Hsiu; Jiang, Xiaowei; Chang, Li-Te; He, Liang; Liu, Pei-Hsuan; Yang, Hong-Jie; Tuan, Hsing-Yu; Chen, Lih-Juann; Wang, Kang L

2012-06-26

To explore spintronics applications for Ge nanowire heterostructures formed by thermal annealing, it is critical to develop a ferromagnetic germanide with high Curie temperature and take advantage of the high-quality interface between Ge and the formed ferromagnetic germanide. In this work, we report, for the first time, the formation and characterization of Mn(5)Ge(3)/Ge/Mn(5)Ge(3) nanowire transistors, in which the room-temperature ferromagnetic germanide was found through the solid-state reaction between a single-crystalline Ge nanowire and Mn contact pads upon thermal annealing. The atomically clean interface between Mn(5)Ge(3) and Ge with a relatively small lattice mismatch of 10.6% indicates that Mn(5)Ge(3) is a high-quality ferromagnetic contact to Ge. Temperature-dependent I-V measurements on the Mn(5)Ge(3)/Ge/Mn(5)Ge(3) nanowire heterostructure reveal a Schottky barrier height of 0.25 eV for the Mn(5)Ge(3) contact to p-type Ge. The Ge nanowire field-effect transistors built on the Mn(5)Ge(3)/Ge/Mn(5)Ge(3) heterostructure exhibit a high-performance p-type behavior with a current on/off ratio close to 10(5), and a hole mobility of 150-200 cm(2)/(V s). Temperature-dependent resistance of a fully germanided Mn(5)Ge(3) nanowire shows a clear transition behavior near the Curie temperature of Mn(5)Ge(3) at about 300 K. Our findings of the high-quality room-temperature ferromagnetic Mn(5)Ge(3) contact represent a promising step toward electrical spin injection into Ge nanowires and thus the realization of high-efficiency spintronic devices for room-temperature applications.

A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications

PubMed Central

Chen, Min-Cheng; Chen, Hao-Yu; Lin, Chia-Yi; Chien, Chao-Hsin; Hsieh, Tsung-Fan; Horng, Jim-Tong; Qiu, Jian-Tai; Huang, Chien-Chao; Ho, Chia-Hua; Yang, Fu-Liang

2012-01-01

This paper reports a versatile nano-sensor technology using “top-down” poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady Vth adjustment window (>2 V Programming/Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording. PMID:22666012

High dose gamma ray exposure effect on the properties of CdSe nanowires

NASA Astrophysics Data System (ADS)

Narula, Chetna; Chauhan, R. P.

2018-03-01

We report high dose gamma-ray (γ-ray) induced modifications incurred by polycrystalline cadmium selenide (CdSe) nanowires of 80 nm diameter. The nanowires have been synthesized using polycarbonate template assisted electro-deposition technique. The samples were irradiated with 60Co γ-radiation at a dose rate of 4.533 kGy/h for different time intervals with doses varying from 0 to 400 kGy. The effects of γ rays on the structural, morphological, optical and electrical properties of nanowires are discussed. XRD patterns of as-synthesized and gamma irradiated CdSe nanowires did not show any phase transformations but the variation in relative intensity was observed. The crystallite size evaluated using Scherrer's formula was found to vary. The optical parameters were obtained using UV-vis spectrometer measurements of absorption. Band gap was found to decrease with γ irradiation up to a dose of 300 kGy after which it was seen to increase. Refractive index and optical dielectric constants were also evaluated. Subjection of γ-radiation also brings about key changes in the electrical properties of CdSe nanowires. The attained data shows that the electrical conductivity varies with absorbed dose. The variations in the properties of CdSe nanowires can be considered as a consequence of ionization process, defect production and its annihilation.

Nanowire growth and sublimation: CdTe quantum dots in ZnTe nanowires

NASA Astrophysics Data System (ADS)

Orrù, M.; Robin, E.; Den Hertog, M.; Moratis, K.; Genuist, Y.; André, R.; Ferrand, D.; Cibert, J.; Bellet-Amalric, E.

2018-04-01

The role of the sublimation of the compound and of the evaporation of the constituents from the gold nanoparticle during the growth of semiconductor nanowires is exemplified with CdTe-ZnTe heterostructures. Operating close to the upper temperature limit strongly reduces the amount of Cd present in the gold nanoparticle and the density of adatoms on the nanowire sidewalls. As a result, the growth rate is small and strongly temperature dependent, but a good control of the growth conditions allows the incorporation of quantum dots in nanowires with sharp interfaces and adjustable shape, and it minimizes the radial growth and the subsequent formation of additional CdTe clusters on the nanowire sidewalls, as confirmed by photoluminescence. Uncapped CdTe segments dissolve into the gold nanoparticle when interrupting the flux, giving rise to a bulblike (pendant-droplet) shape attributed to the Kirkendall effect.

Nanowire-based detector

DOEpatents

Berggren, Karl K; Hu, Xiaolong; Masciarelli, Daniele

2014-06-24

Systems, articles, and methods are provided related to nanowire-based detectors, which can be used for light detection in, for example, single-photon detectors. In one aspect, a variety of detectors are provided, for example one including an electrically superconductive nanowire or nanowires constructed and arranged to interact with photons to produce a detectable signal. In another aspect, fabrication methods are provided, including techniques to precisely reproduce patterns in subsequently formed layers of material using a relatively small number of fabrication steps. By precisely reproducing patterns in multiple material layers, one can form electrically insulating materials and electrically conductive materials in shapes such that incoming photons are redirected toward a nearby electrically superconductive materials (e.g., electrically superconductive nanowire(s)). For example, one or more resonance structures (e.g., comprising an electrically insulating material), which can trap electromagnetic radiation within its boundaries, can be positioned proximate the nanowire(s). The resonance structure can include, at its boundaries, electrically conductive material positioned proximate the electrically superconductive nanowire such that light that would otherwise be transmitted through the sensor is redirected toward the nanowire(s) and detected. In addition, electrically conductive material can be positioned proximate the electrically superconductive nanowire (e.g. at the aperture of the resonant structure), such that light is directed by scattering from this structure into the nanowire.

Intrinsic Bauschinger effect and recoverable plasticity in pentatwinned silver nanowires tested in tension.

PubMed

Bernal, Rodrigo A; Aghaei, Amin; Lee, Sangjun; Ryu, Seunghwa; Sohn, Kwonnam; Huang, Jiaxing; Cai, Wei; Espinosa, Horacio

2015-01-14

Silver nanowires are promising components of flexible electronics such as interconnects and touch displays. Despite the expected cyclic loading in these applications, characterization of the cyclic mechanical behavior of chemically synthesized high-quality nanowires has not been reported. Here, we combine in situ TEM tensile tests and atomistic simulations to characterize the cyclic stress-strain behavior and plasticity mechanisms of pentatwinned silver nanowires with diameters thinner than 120 nm. The experimental measurements were enabled by a novel system allowing displacement-controlled tensile testing of nanowires, which also affords higher resolution for capturing stress-strain curves. We observe the Bauschinger effect, that is, asymmetric plastic flow, and partial recovery of the plastic deformation upon unloading. TEM observations and atomistic simulations reveal that these processes occur due to the pentatwinned structure and emerge from reversible dislocation activity. While the incipient plastic mechanism through the nucleation of stacking fault decahedrons (SFDs) is fully reversible, plasticity becomes only partially reversible as intersecting SFDs lead to dislocation reactions and entanglements. The observed plastic recovery is expected to have implications to the fatigue life and the application of silver nanowires to flexible electronics.

Variation in electrical properties of gamma irradiated cadmium selenate nanowires

NASA Astrophysics Data System (ADS)

Chauhan, R. P.; Rana, Pallavi; Narula, Chetna; Panchal, Suresh; Choudhary, Ritika

2016-07-01

Preparation of low-dimensional materials attracts more and more interest in the last few years, mainly due to the wide field of potential commercial applications ranging from life sciences, medicine and biotechnology to communication and electronics. One-dimensional systems are the smallest dimension structures that can be used for efficient transport of electrons and thus expected to be critical to the function and integration of nanoscale devices. Nanowires with well controlled morphology and extremely high aspect ratio can be obtained by replicating a nanoporous polymer ion-track membrane with cylindrical pores of controlled dimensions. With this technique, materials can be deposited within the pores of the membrane by electrochemical reduction of the desired ion. In the present study, cadmium selenate nanowires were synthesized potentiostatically via template method. These synthesized nanowires were then exposed to gamma rays by using a 60Co source at the Inter University Accelerator Centre, New Delhi, India. Structural, morphological, electrical and elemental characterizations were made in order to analyze the effect of gamma irradiation on the synthesized nanowires. I-V measurements of cadmium selenate nanowires, before and after irradiation were made with the help of Keithley 2400 source meter and Ecopia probe station. A significant change in the electrical conductivity of cadmium selenate nanowires was found after gamma irradiation. The crystallography of the synthesized nanowires was also studied using a Rigaku X-ray diffractrometer equipped with Cu-Kα radiation. XRD patterns of irradiated samples showed no variation in the peak positions or phase change.

Electrodeposition of Metal on GaAs Nanowires

NASA Astrophysics Data System (ADS)

Liu, Chao; Einabad, Omid; Watkins, Simon; Kavanagh, Karen

2010-10-01

Copper (Cu) electrical contacts to freestanding gallium arsenide (GaAs) nanowires have been fabricated via electrodeposition. The nanowires are zincblende (111) oriented grown epitaxially on n-type Si-doped GaAs (111)B substrates by gold-catalyzed Vapor Liquid Solid (VLS) growth in a metal organic vapour phase epitaxy (MOVPE) reactor. The epitaxial electrodeposition process, based on previous work with bulk GaAs substrates, consists of a substrate oxide pre-etch in dilute ammonium-hydroxide carried out prior to galvanostatic electrodeposition in a pure Cu sulphate aqueous electrolyte at 20-60^oC. For GaAs nanowires, we find that Cu or Fe has a preference for growth on the gold catalyst avoiding the sidewalls. After removing gold, both metals still prefer to grow only on top of the nanowire, which has the largest potential field.

Intra-wire coupling in segmented Ni/Cu nanowires deposited by electrodeposition

NASA Astrophysics Data System (ADS)

Sergelius, Philip; Lee, Ji Hyun; Fruchart, Olivier; Shaker Salem, Mohamed; Allende, Sebastian; Alejandro Escobar, Roberto; Gooth, Johannes; Zierold, Robert; Toussaint, Jean-Christophe; Schneider, Sebastian; Pohl, Darius; Rellinghaus, Bernd; Martin, Sylvain; Garcia, Javier; Reith, Heiko; Spende, Anne; Toimil-Molares, Maria-Eugenia; Altbir, Dora; Cowburn, Russel; Görlitz, Detlef; Nielsch, Kornelius

2017-02-01

Segmented magnetic nanowires are a promising route for the development of three dimensional data storage techniques. Such devices require a control of the coercive field and the coupling mechanisms between individual magnetic elements. In our study, we investigate electrodeposited nanomagnets within host templates using vibrating sample magnetometry and observe a strong dependence between nanowire length and coercive field (25 nm-5 μm) and diameter (25-45 nm). A transition from a magnetization reversal through coherent rotation to domain wall propagation is observed at an aspect ratio of approximately 2. Our results are further reinforced via micromagnetic simulations and angle dependent hysteresis loops. The found behavior is exploited to create nanowires consisting of a fixed and a free segment in a spin-valve like structure. The wires are released from the membrane and electrically contacted, displaying a giant magnetoresistance effect that is attributed to individual switching of the coupled nanomagnets. We develop a simple analytical model to describe the observed switching phenomena and to predict stable and unstable regimes in coupled nanomagnets of certain geometries.

Superconductivity of a Sn film controlled by an array of Co nanowires

NASA Astrophysics Data System (ADS)

Wei, Zhiyuan; Ye, Zuxin; Rathnayaka, Daya; Lyuksyutov, Igor; Wu, Wenhao; Naugle, Donald

2012-02-01

Superconducting properties of a hybrid structure composed of ferromagnetic Co nanowire arrays and a superconducting Sn film have been investigated. Ordered Co nanowires arrays with 60 nm, 150 nm and 200 nm diameter were electroplated into the pores of self organized anodic aluminum oxide (AAO) membranes. Hysteretic dependence of the Sn film superconducting properties on applied magnetic field and critical current enhancement at moderate fields has been observed. This behavior strongly depends on the ratio of the Sn film thickness to the Co nanowire diameter.

Superconductivity of a Sn film controlled by an array of Co nanowires

NASA Astrophysics Data System (ADS)

Wei, Z.; Ye, Z.; Rathnayaka, K. D. D.; Lyuksyutov, I. F.; Wu, W.; Naugle, D. G.

2012-09-01

Superconducting properties of a hybrid structure composed of ferromagnetic Co nanowire arrays and a superconducting Sn film have been investigated. Ordered Co nanowires arrays with 60 nm, 150 nm and 200 nm diameter were electroplated into the pores of self organized Anodic Aluminum Oxide (AAO) membranes. Hysteretic dependence of the Sn film superconducting properties on applied magnetic field and critical current enhancement at moderate fields has been observed. This behavior strongly depends on the ratio of the Sn film thickness to the Co nanowire diameter.

Axial buckling and transverse vibration of ultrathin nanowires: low symmetry and surface elastic effect

NASA Astrophysics Data System (ADS)

Lei, Xiao; Narsu, B.; Yun, Guohong; Li, Jiangang; Yao, Haiyan

2016-05-01

Surface effects play a deterministic role in the physical and mechanical properties of nanosized materials and structures. In this paper, we present a self-consistent theoretical scheme for describing the elasticity of nanowires. The natural frequency and the critical compression force of axial buckling are obtained analytically, taking into consideration the influences of lower symmetry, additional elastic parameters, surface reconstruction, surface elasticity, and residual surface stress. Applications of the present theory to elastic systems for the  <1 0 0 >  axially oriented Si and Cu nanowires and Ag  <1 1 0 >  axially oriented nanowires yield good agreement with experimental data and calculated results. The larger positive value of the new elastic parameter c12α taken into account for Si  <1 0 0 >  oriented nanowires drives the curves of natural frequency and critical compression force versus thickness towards the results obtained from density functional theory simulation. Negative surface stress decreases the critical load for axial buckling, thus making the nanowires very easy to bend into various structures. The present study is envisaged to provide useful insights for the design and application of nanowire-based devices.

A three-dimensional phase field model for nanowire growth by the vapor-liquid-solid mechanism

NASA Astrophysics Data System (ADS)

Wang, Yanming; Ryu, Seunghwa; McIntyre, Paul C.; Cai, Wei

2014-07-01

We present a three-dimensional multi-phase field model for catalyzed nanowire (NW) growth by the vapor-liquid-solid (VLS) mechanism. The equation of motion contains both a Ginzburg-Landau term for deposition and a diffusion (Cahn-Hilliard) term for interface relaxation without deposition. Direct deposition from vapor to solid, which competes with NW crystal growth through the molten catalyst droplet, is suppressed by assigning a very small kinetic coefficient at the solid-vapor interface. The thermodynamic self-consistency of the model is demonstrated by its ability to reproduce the equilibrium contact angles at the VLS junction. The incorporation of orientation dependent gradient energy leads to faceting of the solid-liquid and solid-vapor interfaces. The model successfully captures the curved shape of the NW base and the Gibbs-Thomson effect on growth velocity.

Mechanical behavior enhancement of ZnO nanowire by embedding different nanowires

NASA Astrophysics Data System (ADS)

Vazinishayan, Ali; Yang, Shuming; Lambada, Dasaradha Rao; Wang, Yiming

2018-06-01

In this work, we employed commercial finite element modeling (FEM) software package ABAQUS to analyze mechanical properties of ZnO nanowire before and after embedding with different kinds of nanowires, having different materials and cross-section models such as Au (circular), Ag (pentagonal) and Si (rectangular) using three point bending technique. The length and diameter of the ZnO nanowire were measured to be 12,280 nm and 103.2 nm, respectively. In addition, Au, Ag and Si nanowires were considered to have the length of 12,280 nm and the diameter of 27 nm. It was found that after embedding Si nanowire with rectangular cross-section into the ZnO nanowire, the distribution of Von Misses stresses criterion, displacement and strain were decreased than the other nanowires embedded. The highest stiffness, the elastic deformation and the high strength against brittle failure have been made by Si nanowire comparison to the Au and Ag nanowires, respectively.

Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection

NASA Astrophysics Data System (ADS)

Sestoft, Joachim E.; Kanne, Thomas; Gejl, Aske Nørskov; von Soosten, Merlin; Yodh, Jeremy S.; Sherman, Daniel; Tarasinski, Brian; Wimmer, Michael; Johnson, Erik; Deng, Mingtang; Nygârd, Jesper; Jespersen, Thomas Sand; Marcus, Charles M.; Krogstrup, Peter

2018-04-01

The combination of strong spin-orbit coupling, large g factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of hybrid epitaxial InAsSb/Al nanowires, with varying composition and crystal structure. We find the strongest spin-orbit interaction at intermediate compositions in zinc-blende InAs1 -xSbx nanowires, exceeding that of both InAs and InSb materials, confirming recent theoretical studies. We show that the epitaxial InAsSb/Al interface allows for a hard induced superconducting gap and 2 e transport in Coulomb charging experiments, similarly to experiments on InAs/Al and InSb/Al materials, and find measurements consistent with topological phase transitions at low magnetic fields due to large effective g factors. Finally we present a method to grow pure wurtzite InAsSb nanowires which are predicted to exhibit even stronger spin-orbit coupling than the zinc-blende structure.

ZnO Nanowire-Based Corona Discharge Devices Operated Under Hundreds of Volts.

PubMed

Yang, Wenming; Zhu, Rong; Zong, Xianli

2016-12-01

Minimizing the voltage of corona discharges, especially when using nanomaterials, has been of great interest in the past decade or so. In this paper, we report a new corona discharge device by using ZnO nanowires operated in atmospheric air to realize continuous corona discharge excited by hundreds of volts. ZnO nanowires were synthesized on microelectrodes using electric-field-assisted wet chemical method, and a thin tungsten film was deposited on the microchip to enhance discharging performance. The testing results showed that the corona inception voltages were minimized greatly by using nanowires compared to conventional dischargers as a result of the local field enhancement of nanowires. The corona could be continuously generated and self-sustaining. It was proved that the law of corona inception voltage obeyed the conventional Peek's breakdown criterion. An optimal thickness of tungsten film coated over ZnO nanowires was figured out to obtain the lowest corona inception voltage. The ion concentration of the nanowire-based discharger attained 10(17)/m(3) orders of magnitude, which is practicable for most discharging applications.

Length distributions of nanowires: Effects of surface diffusion versus nucleation delay

NASA Astrophysics Data System (ADS)

Dubrovskii, Vladimir G.

2017-04-01

It is often thought that the ensembles of semiconductor nanowires are uniform in length due to the initial organization of the growth seeds such as lithographically defined droplets or holes in the substrate. However, several recent works have already demonstrated that most nanowire length distributions are broader than Poissonian. Herein, we consider theoretically the length distributions of non-interacting nanowires that grow by the material collection from the entire length of their sidewalls and with a delay of nucleation of the very first nanowire monolayer. The obtained analytic length distribution is controlled by two parameters that describe the strength of surface diffusion and the nanowire nucleation rate. We show how the distribution changes from the symmetrical Polya shape without the nucleation delay to a much broader and asymmetrical one for longer delays. In the continuum limit (for tall enough nanowires), the length distribution is given by a power law times an incomplete gamma-function. We discuss interesting scaling properties of this solution and give a recipe for analyzing and tailoring the experimental length histograms of nanowires which should work for a wide range of material systems and growth conditions.

Interface coupling-induced enhancement of magnetoimpedance effect in heterogeneous nanobrush by adjusting textures of Co nanowires

PubMed Central

2013-01-01

Interface coupling-induced and interface coupling-enhanced magnetoimpedance (MI) effect in heterogeneous nanobrush has been investigated. The nanobrush is composed of Fe25Ni75 nanofilm and textured hexagonal close-packed cobalt nanowire array, respectively fabricated by RF magnetron sputtering and electrochemical deposition. The design of this structure is based on the vortex distribution of magnetic moments in thin film, which can be induced by the exchange coupling effect at the interfaces of the nanobrush. The texture of nanowires plays an important role in the MI effect of the nanobrush, which is regulated by controlling the pH values and temperatures of the deposition process. The ‘parallel’ and ‘perpendicular’ coupling models were used to explain the different MI results of the nanobrush with cobalt nanowires, which have (100) and (002) textures, respectively. The optimized MI effect of the nanobrush brought by (100) nanowires can be magnified by 300% with more than 80%/Oe magnetic sensitivity at a low frequency, which has great application potentials in low-frequency MI sensors. PMID:24207011

Mobile atom traps using magnetic nanowires

NASA Astrophysics Data System (ADS)

Allwood, D. A.; Schrefl, T.; Hrkac, G.; Hughes, I. G.; Adams, C. S.

2006-07-01

By solving the Landau-Lifshitz-Gilbert equation using a finite element method we show that an atom trap can be produced above a ferromagnetic nanowire domain wall. Atoms experience trap frequencies of up to a few megahertz, and can be transported by applying a weak magnetic field along the wire. Lithographically defined nanowire patterns could allow quantum information processing by bringing domain walls in close proximity at certain places to allow trapped atom interactions and far apart at others to allow individual addressing.

Electrical and optical evaluation of n-type doping in In x Ga(1-x)P nanowires.

PubMed

Zeng, Xulu; Mourão, Renato T; Otnes, Gaute; Hultin, Olof; Dagytė, Vilgailė; Heurlin, Magnus; Borgström, Magnus T

2018-06-22

To harvest the benefits of III-V nanowires in optoelectronic devices, the development of ternary materials with controlled doping is needed. In this work, we performed a systematic study of n-type dopant incorporation in dense In x Ga (1-x) P nanowire arrays using tetraethyl tin (TESn) and hydrogen sulfide (H 2 S) as dopant precursors. The morphology, crystal structure and material composition of the nanowires were characterized by use of scanning electron microscopy, transmission electron microscopy and energy dispersive x-ray analysis. To investigate the electrical properties, the nanowires were broken off from the substrate and mechanically transferred to thermally oxidized silicon substrates, after which electron beam lithography and metal evaporation were used to define electrical contacts to selected nanowires. Electrical characterization, including four-probe resistivity and Hall effect, as well as back-gated field effect measurements, is combined with photoluminescence spectroscopy to achieve a comprehensive evaluation of the carrier concentration in the doped nanowires. We measure a carrier concentration of ∼1 × 10 16 cm -3 in nominally intrinsic nanowires, and the maximum doping level achieved by use of TESn and H 2 S as dopant precursors using our parameters is measured to be ∼2 × 10 18 cm -3 , and ∼1 × 10 19 cm -3 , respectively (by Hall effect measurements). Hence, both TESn and H 2 S are suitable precursors for a wide range of n-doping levels in In x Ga (1-x) P nanowires needed for optoelectronic devices, grown via the vapor-liquid-solid mode.

Analysis of effect of nanoporous alumina substrate coated with polypyrrole nanowire on cell morphology based on AFM topography.

PubMed

El-Said, Waleed Ahmed; Yea, Cheol-Heon; Jung, Mi; Kim, Hyuncheol; Choi, Jeong-Woo

2010-05-01

In this study, in situ electrochemical synthesis of polypyrrole nanowires with nanoporous alumina template was described. The formation of highly ordered porous alumina substrate was demonstrated with Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). In addition, Fourier transform infrared analysis confirmed that polypyrrole (PP) nanowires were synthesized by direct electrochemical oxidation of pyrrole. HeLa cancer cells and HMCF normal cells were immobilized on the polypyrrole nanowires/nanoporous alumina substrates to determine the effects of the substrate on the cell morphology, adhesion and proliferation as well as the biocompatibility of the substrate. Cell adhesion and proliferation were characterized using a standard MTT assay. The effects of the polypyrrole nanowires/nanoporous alumina substrate on the cell morphology were studied by AFM. The nanoporous alumina coated with polypyrrole nanowires was found to exhibit better cell adhesion and proliferation than polystyrene petridish, aluminum foil, 1st anodized and uncoated 2nd anodized alumina substrate. This study showed the potential of the polypyrrole nanowires/nanoporous alumina substrate as biocompatibility electroactive polymer substrate for both healthy and cancer cell cultures applications.

Effect of gamma radiation on the optical and structural properties of ZnO nanowires with various diameters

NASA Astrophysics Data System (ADS)

Reyhani, A.; Gholizadeh, A.; vahedi, V.; Khanlary, M. R.

2018-01-01

The effects of gamma-irradiation are studied on the morphology and structural properties of ZnO nanowire with various diameters. The ZnO nanowires are grown using Zn thin films at various initial thicknesses including 125, 250 and 500 nm in air ambient. The results illustrate dramatic effects of Gamma-irradiation on the deformation of ZnO nanowires. Thus, radiation induce ripple ZnO surfaces instead ZnO nanowires. Gamma-irradiation has also been effective on the optical and crystalline properties of the nanowires. X-ray diffraction attests that size of the ZnO nano-structures has changed and (l00) crystalline direction related to Zn metal has been created after irradiation. UV-Visible spectra display two areas for transmittance of irradiated ZnO nanowires, one in the Visible-light and the other in IR sub-region. In the Visible-light area, the layer gets thicker from 125 to 500 nm; the difference between the layer transmittance spectra is reduced before and after gamma irradiation. In the IR-light region, with increasing of ZnO initial thickness, the difference between the layer transmittance spectra is increased before and after gamma irradiation. The photoluminescence spectroscopy displays that intensity of green-yellow band improves in compared to near-band-edge emission due to formation of Zn metal and oxygen vacancies after gamma irradiation.

High Piezo-photocatalytic Efficiency of CuS/ZnO Nanowires Using Both Solar and Mechanical Energy for Degrading Organic Dye.

PubMed

Hong, Deyi; Zang, Weili; Guo, Xiao; Fu, Yongming; He, Haoxuan; Sun, Jing; Xing, Lili; Liu, Baodan; Xue, Xinyu

2016-08-24

High piezo-photocatalytic efficiency of degrading organic pollutants has been realized from CuS/ZnO nanowires using both solar and mechanical energy. CuS/ZnO heterostructured nanowire arrays are compactly/vertically aligned on stainless steel mesh by a simple two-step wet-chemical method. The mesh-supported nanocomposites can facilitate an efficient light harvesting due to the large surface area and can also be easily removed from the treated solution. Under both solar and ultrasonic irradiation, CuS/ZnO nanowires can rapidly degrade methylene blue (MB) in aqueous solution, and the recyclability is investigated. In this process, the ultrasonic assistance can greatly enhance the photocatalytic activity. Such a performance can be attributed to the coupling of the built-in electric field of heterostructures and the piezoelectric field of ZnO nanowires. The built-in electric field of the heterostructure can effectively separate the photogenerated electrons/holes and facilitate the carrier transportation. The CuS component can improve the visible light utilization. The piezoelectric field created by ZnO nanowires can further separate the photogenerated electrons/holes through driving them to migrate along opposite directions. The present results demonstrate a new water-pollution solution in green technologies for the environmental remediation at the industrial level.

Effects of gold diffusion on n-type doping of GaAs nanowires.

PubMed

Tambe, Michael J; Ren, Shenqiang; Gradecak, Silvija

2010-11-10

The deposition of n-GaAs shells is explored as a method of n-type doping in GaAs nanowires grown by the Au-mediated metal-organic chemical vapor deposition. Core-shell GaAs/n-GaAs nanowires exhibit an unintended rectifying behavior that is attributed to the Au diffusion during the shell deposition based on studies using energy dispersive X-ray spectroscopy, current-voltage, capacitance-voltage, and Kelvin probe force measurements. Removing the gold prior to n-type shell deposition results in the realization of n-type GaAs nanowires without rectification. We directly correlate the presence of gold impurities to nanowire electrical properties and provide an insight into the role of seed particles on the properties of nanowires and nanowire heterostructures.

Self catalytic growth of indium oxide (In2O3) nanowires by resistive thermal evaporation.

PubMed

Kumar, R Rakesh; Rao, K Narasimha; Rajanna, K; Phani, A R

2014-07-01

Self catalytic growth of Indium Oxide (In2O3) nanowires (NWs) have been grown by resistive thermal evaporation of Indium (In) in the presence of oxygen without use of any additional metal catalyst. Nanowires growth took place at low substrate temperature of 370-420 degrees C at an applied current of 180-200 A to the evaporation boat. Morphology, microstructures, and compositional studies of the grown nanowires were performed by employing field emission scanning electron microscopy (FESEM), X-Ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) respectively. Nanowires were uniformly grown over the entire Si substrate and each of the nanowire is capped with a catalyst particle at their end. X-ray diffraction study reveals the crystalline nature of the grown nanowires. Transmission electron microscopy study on the nanowires further confirmed the single crystalline nature of the nanowires. Energy dispersive X-ray analysis on the nanowires and capped nanoparticle confirmed that Indium act as catalyst for In2O3 nanowires growth. A self catalytic Vapor-Liquid-Solid (VLS) growth mechanism was responsible for the growth of In2O3 nanowires. Effect of oxygen partial pressure variation and variation of applied currents to the evaporation boat on the nanowires growth was systematically studied. These studies concluded that at oxygen partial pressure in the range of 4 x 10(-4), 6 x 10(-4) mbar at applied currents to the evaporation boat of 180-200 A were the best conditions for good nanowires growth. Finally, we observed another mode of VLS growth along with the standard VLS growth mode for In2O3 nanowires similar to the growth mechanism reported for GaAs nanowires.

Effects of Nanowire Length and Surface Roughness on the Electrochemical Sensor Properties of Nafion-Free, Vertically Aligned Pt Nanowire Array Electrodes

PubMed Central

Li, Zhiyang; Leung, Calvin; Gao, Fan; Gu, Zhiyong

2015-01-01

In this paper, vertically aligned Pt nanowire arrays (PtNWA) with different lengths and surface roughnesses were fabricated and their electrochemical performance toward hydrogen peroxide (H2O2) detection was studied. The nanowire arrays were synthesized by electroplating Pt in nanopores of anodic aluminum oxide (AAO) template. Different parameters, such as current density and deposition time, were precisely controlled to synthesize nanowires with different surface roughnesses and various lengths from 3 μm to 12 μm. The PtNWA electrodes showed better performance than the conventional electrodes modified by Pt nanowires randomly dispersed on the electrode surface. The results indicate that both the length and surface roughness can affect the sensing performance of vertically aligned Pt nanowire array electrodes. Generally, longer nanowires with rougher surfaces showed better electrochemical sensing performance. The 12 μm rough surface PtNWA presented the largest sensitivity (654 μA·mM−1·cm−2) among all the nanowires studied, and showed a limit of detection of 2.4 μM. The 12 μm rough surface PtNWA electrode also showed good anti-interference property from chemicals that are typically present in the biological samples such as ascorbic, uric acid, citric acid, and glucose. The sensing performance in real samples (river water) was tested and good recovery was observed. These Nafion-free, vertically aligned Pt nanowires with surface roughness control show great promise as versatile electrochemical sensors and biosensors. PMID:26404303

Room-temperature lasing in a single nanowire with quantum dots

NASA Astrophysics Data System (ADS)

Tatebayashi, Jun; Kako, Satoshi; Ho, Jinfa; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko

2015-08-01

Semiconductor nanowire lasers are promising as ultrasmall, highly efficient coherent light emitters in the fields of nanophotonics, nano-optics and nanobiotechnology. Although there have been several demonstrations of nanowire lasers using homogeneous bulk gain materials or multi-quantum-wells/disks, it is crucial to incorporate lower-dimensional quantum nanostructures into the nanowire to achieve superior device performance in relation to threshold current, differential gain, modulation bandwidth and temperature sensitivity. The quantum dot is a useful and essential nanostructure that can meet these requirements. However, difficulties in forming stacks of quantum dots in a single nanowire hamper the realization of lasing operation. Here, we demonstrate room-temperature lasing of a single nanowire containing 50 quantum dots by properly designing the nanowire cavity and tailoring the emission energy of each dot to enhance the optical gain. Our demonstration paves the way toward ultrasmall lasers with extremely low power consumption for integrated photonic systems.

Engineering Nanowire n-MOSFETs at L_{g}<8 nm

NASA Astrophysics Data System (ADS)

Mehrotra, Saumitra R.; Kim, SungGeun; Kubis, Tillmann; Povolotskyi, Michael; Lundstrom, Mark S.; Klimeck, Gerhard

2013-07-01

As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport mass can be used to limit source-drain (S-D) tunneling. Taking InAs and Si as examples, it is shown that different heavier transport masses can be engineered using strain and crystal orientation engineering. Full-band extended device atomistic quantum transport simulations are performed for nanowire MOSFETs at Lg<8 nm in both ballistic and incoherent scattering regimes. In conclusion, a heavier transport mass can indeed be advantageous in improving ON state currents in ultra scaled nanowire MOSFETs.

Angular dependence of the magnetic properties of permalloy and nickel nanowires as a function of their diameters

NASA Astrophysics Data System (ADS)

Raviolo, Sofía; Tejo, Felipe; Bajales, Noelia; Escrig, Juan

2018-01-01

In this paper we have compared the angular dependence of the magnetic properties of permalloy (Ni80Fe20) and nickel nanowires by means of micromagnetic simulations. For each material we have chosen two diameters, 40 and 100 nm. Permalloy nanowires with smaller diameters (d = 40 nm) exhibit greater coercivity than nickel nanowires, regardless of the angle at which the external magnetic field is applied. In addition, both Py and Ni nanowires exhibit the same remanence values. However, the nanowires of larger diameters (d = 100 nm) exhibit a more complex behavior, noting that for small angles, nickel nanowires are those that now exhibit a greater coercivity in comparison to those of permalloy. The magnetization reversal modes vary as a function of the angle at which the external field is applied. When the field is applied parallel to the wire axis, it reverts through nucleation and propagation of domain walls, whereas when the field is applied perpendicular to the axis, it reverts by a pseudo-coherent rotation. These results may provide a guide to control the magnetic properties of nanowires for use in potential applications.

Design considerations and emerging challenges for nanotube-, nanowire-, and negative capacitor-field effect transistors

NASA Astrophysics Data System (ADS)

Wahab, Md. Abdul

As the era of classical planar metal-oxide-semiconductor field-effect transistors (MOSFETs) comes to an end, the semiconductor industry is beginning to adopt 3D device architectures, such as FinFETs, starting at the 22 nm technology node. Since physical limits such as short channel effect (SCE) and self-heating may dominate, it may be difficult to scale Si FinFET below 10 nm. In this regard, transistors with different materials, geometries, or operating principles may help. For example, gate has excellent electrostatic control over 2D thin film channel with planar geometry, and 1D nanowire (NW) channel with gate-all-around (GAA) geometry to reduce SCE. High carrier mobility of single wall carbon nanotube (SWNT) or III-V channels may reduce VDD to reduce power consumption. Therefore, as channel of transistor, 2D thin film of array SWNTs and 1D III-V multi NWs are promising for sub 10 nm technology nodes. In this thesis, we analyze the potential of these transistors from process, performance, and reliability perspectives. For SWNT FETs, we discuss a set of challenges (such as how to (i) characterize diameter distribution, (ii) remove metallic (m)-SWNTs, and (iii) avoid electrostatic cross-talk among the neighboring SWNTs), and demonstrate solution strategies both theoretically and experimentally. Regarding self-heating in these new class of devices (SWNT FET and GAA NW FET including state-of-the-art FinFET), higher thermal resistance from poor thermal conducting oxides results significant temperature rise, and reduces the IC life-time. For GAA NW FETs, we discuss accurate self-heating evaluation with good spatial, temporal, and thermal resolutions. The introduction of negative capacitor (NC), as gate dielectric stack of transistor, allows sub 60 mV/dec operation to reduce power consumption significantly. Taken together, our work provides a comprehensive perspective regarding the challenges and opportunities of sub 10 nm technology nodes.

Coherently Strained Si-SixGe1-x Core-Shell Nanowire Heterostructures.

PubMed

Dillen, David C; Wen, Feng; Kim, Kyounghwan; Tutuc, Emanuel

2016-01-13

Coherently strained Si-SixGe1-x core-shell nanowire heterostructures are expected to possess a positive shell-to-core conduction band offset, allowing for quantum confinement of electrons in the Si core. We report the growth of epitaxial, coherently strained Si-SixGe1-x core-shell heterostructures through the vapor-liquid-solid mechanism for the Si core, followed in situ by the epitaxial SixGe1-x shell growth using ultrahigh vacuum chemical vapor deposition. The Raman spectra of individual nanowires reveal peaks associated with the Si-Si optical phonon mode in the Si core and the Si-Si, Si-Ge, and Ge-Ge vibrational modes of the SixGe1-x shell. The core Si-Si mode displays a clear red-shift compared to unstrained, bare Si nanowires thanks to the lattice mismatch-induced tensile strain, in agreement with calculated values using a finite-element continuum elasticity model combined with lattice dynamic theory. N-type field-effect transistors using Si-SixGe1-x core-shell nanowires as channel are demonstrated.

Heteroepitaxial Writing of Silicon-on-Sapphire Nanowires.

PubMed

Xu, Mingkun; Xue, Zhaoguo; Wang, Jimmy; Zhao, Yaolong; Duan, Yao; Zhu, Guangyao; Yu, Linwei; Xu, Jun; Wang, Junzhuan; Shi, Yi; Chen, Kunji; Roca I Cabarrocas, Pere

2016-12-14

The heteroepitaxial growth of crystal silicon thin films on sapphire, usually referred to as SoS, has been a key technology for high-speed mixed-signal integrated circuits and processors. Here, we report a novel nanoscale SoS heteroepitaxial growth that resembles the in-plane writing of self-aligned silicon nanowires (SiNWs) on R-plane sapphire. During a low-temperature growth at <350 °C, compared to that required for conventional SoS fabrication at >900 °C, the bottom heterointerface cultivates crystalline Si pyramid seeds within the catalyst droplet, while the vertical SiNW/catalyst interface subsequently threads the seeds into continuous nanowires, producing self-oriented in-plane SiNWs that follow a set of crystallographic directions of the sapphire substrate. Despite the low-temperature fabrication process, the field effect transistors built on the SoS-SiNWs demonstrate a high on/off ratio of >5 × 10 4 and a peak hole mobility of >50 cm 2 /V·s. These results indicate the novel potential of deploying in-plane SoS nanowire channels in places that require high-performance nanoelectronics and optoelectronics with a drastically reduced thermal budget and a simplified manufacturing procedure.

A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications

NASA Astrophysics Data System (ADS)

Molaei Imen Abadi, Rouzbeh; Saremi, Mehdi

2018-02-01

In this paper, the influence of ultra-scaled physical symmetrical contraction on electrical characteristics of ultra-thin silicon-on-insulator nanowires with circular gate-all-around structure is investigated by using a 3D Atlas numerical quantum simulator based on non-equilibrium green's function formalism. It is demonstrated that local cross-section variation in a nanowire transistor results in the establishment of tunnel energy barriers at the source-channel and drain-channel junctions which change device physics and cause a transmission from a quantum wire (1-D) to a floating quantum dot nanowire (0-D) introducing a resonant tunneling nanowire FET (RT-NWFET) as an interesting concept of nanoscale MOSFETs. The barriers construct resonance energy levels in the channel region of nanowires because of the longitudinal confinement in three directions causing some fluctuation in I D- V GS characteristic. In addition, these barriers remarkably improve the subthreshold swing and minimize the ON/OFF-current ratio degradation at a low operation voltage of 0.5 V. As a result, RT-NWFETs are intrinsically preserved from drain-source tunneling and are an interesting candidate for developing the roadmap below 10 nm.

Improving emission uniformity and linearizing band dispersion in nanowire arrays using quasi-aperiodicity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, P. Duke; Koleske, Daniel D.; Povinelli, Michelle L.

For this study, we experimentally investigate a new class of quasi-aperiodic structures for improving the emission pattern in nanowire arrays. Efficient normal emission, as well as lasing, can be obtained from III-nitride photonic crystal (PhC) nanowire arrays that utilize slow group velocity modes near the Γ-point in reciprocal space. However, due to symmetry considerations, the emitted far-field pattern of such modes are often ‘donut’-like. Many applications, including lighting for displays or lasers, require a more uniform beam profile in the far-field. Previous work has improved far-field beam uniformity of uncoupled modes by changing the shape of the emitting structure. However,more » in nanowire systems, the shape of nanowires cannot always be arbitrarily changed due to growth or etch considerations. Here, we investigate breaking symmetry by instead changing the position of emitters. Using a quasi-aperiodic geometry, which changes the emitter position within a photonic crystal supercell (2x2), we are able to linearize the photonic bandstructure near the Γ-point and greatly improve emitted far-field uniformity. We realize the III-nitride nanowires structures using a top-down fabrication procedure that produces nanowires with smooth, vertical sidewalls. Comparison of room-temperature micro-photoluminescence (µ-PL) measurements between periodic and quasi-aperiodic nanowire arrays reveal resonances in each structure, with the simple periodic structure producing a donut beam in the emitted far-field and the quasi-aperiodic structure producing a uniform Gaussian-like beam. We investigate the input pump power vs. output intensity in both systems and observe the simple periodic array exhibiting a non-linear relationship, indicative of lasing. We believe that the quasi-aperiodic approach studied here provides an alternate and promising strategy for shaping the emission pattern of nanoemitter systems.« less

Organically Modified Silicas on Metal Nanowires

PubMed Central

2010-01-01

Organically modified silica coatings were prepared on metal nanowires using a variety of silicon alkoxides with different functional groups (i.e., carboxyl groups, polyethylene oxide, cyano, dihydroimidazole, and hexyl linkers). Organically modified silicas were deposited onto the surface of 6-μm-long, ∼300-nm-wide, cylindrical metal nanowires in suspension by the hydrolysis and polycondensation of silicon alkoxides. Syntheses were performed at several ratios of tetraethoxysilane to an organically modified silicon alkoxide to incorporate desired functional groups into thin organosilica shells on the nanowires. These coatings were characterized using transmission electron microscopy, X-ray photoelectron spectroscopy, and infrared spectroscopy. All of the organically modified silicas prepared here were sufficiently porous to allow the removal of the metal nanowire cores by acid etching to form organically modified silica nanotubes. Additional functionality provided to the modified silicas as compared to unmodified silica prepared using only tetraethoxysilane precursors was demonstrated by chromate adsorption on imidazole-containing silicas and resistance to protein adsorption on polyethyleneoxide-containing silicas. Organically modified silica coatings on nanowires and other nano- and microparticles have potential application in fields such as biosensing or nanoscale therapeutics due to the enhanced properties of the silica coatings, for example, the prevention of biofouling. PMID:20715881

High energy density in PVDF nanocomposites using an optimized nanowire array.

PubMed

Guo, Ru; Luo, Hang; Liu, Weiwei; Zhou, Xuefan; Tang, Lin; Zhou, Kechao; Zhang, Dou

2018-06-22

TiO2 nanowire arrays are often utilized to prepare high performance polymer nanocomposites, however, the contribution to the energy density is limited due to their non-ferroelectric characteristics. A nanocomposite with an optimized nanowire array combining the ferroelectric properties of lead zirconate titanate (PZT) with TiO2, readily forming nanowires (denoted as a TiO2-P nanowire array), is prepared to enhance the permittivity. Poly(vinylidene fluoride) (PVDF) is used as the polymer matrix due to its high breakdown strength, e.g. 600-700 kV mm-1. As a result, the permittivity and breakdown electric field reach 53 at 1 kHz and 550 kV mm-1, respectively. Therefore, the nanocomposites achieve a higher discharge energy density of 12.4 J cm-3 with excellent cycle stability, which is the highest among nanocomposites based on a nanowire array as a filler in a PVDF matrix. This work provides not only a feasible approach to obtain high performance dielectric nanocomposites, but also a wide range of potential applications in the energy storage and energy harvesting fields.

Contact planarization of ensemble nanowires

NASA Astrophysics Data System (ADS)

Chia, A. C. E.; LaPierre, R. R.

2011-06-01

The viability of four organic polymers (S1808, SC200, SU8 and Cyclotene) as filling materials to achieve planarization of ensemble nanowire arrays is reported. Analysis of the porosity, surface roughness and thermal stability of each filling material was performed. Sonication was used as an effective method to remove the tops of the nanowires (NWs) to achieve complete planarization. Ensemble nanowire devices were fully fabricated and I-V measurements confirmed that Cyclotene effectively planarizes the NWs while still serving the role as an insulating layer between the top and bottom contacts. These processes and analysis can be easily implemented into future characterization and fabrication of ensemble NWs for optoelectronic device applications.

Contact planarization of ensemble nanowires.

PubMed

Chia, A C E; LaPierre, R R

2011-06-17

The viability of four organic polymers (S1808, SC200, SU8 and Cyclotene) as filling materials to achieve planarization of ensemble nanowire arrays is reported. Analysis of the porosity, surface roughness and thermal stability of each filling material was performed. Sonication was used as an effective method to remove the tops of the nanowires (NWs) to achieve complete planarization. Ensemble nanowire devices were fully fabricated and I-V measurements confirmed that Cyclotene effectively planarizes the NWs while still serving the role as an insulating layer between the top and bottom contacts. These processes and analysis can be easily implemented into future characterization and fabrication of ensemble NWs for optoelectronic device applications.

Nanowire-Intensified Metal-Enhanced Fluorescence in Hybrid Polymer-Plasmonic Electrospun Filaments.

PubMed

Camposeo, Andrea; Jurga, Radoslaw; Moffa, Maria; Portone, Alberto; Cardarelli, Francesco; Della Sala, Fabio; Ciracì, Cristian; Pisignano, Dario

2018-05-01

Hybrid polymer-plasmonic nanostructures might combine high enhancement of localized fields from metal nanoparticles with light confinement and long-range transport in subwavelength dielectric structures. Here, the complex behavior of fluorophores coupling to Au nanoparticles within polymer nanowires, which features localized metal-enhanced fluorescence (MEF) with unique characteristics compared to conventional structures, is reported. The intensification effect when the particle is placed in the organic filaments is remarkably higher with respect to thin films of comparable thickness, thus highlighting a specific, nanowire-related enhancement of MEF effects. A dependence on the confinement volume in the dielectric nanowire is also indicated, with MEF significantly increasing upon reduction of the wire diameter. These findings are rationalized by finite element simulations, predicting a position-dependent enhancement of the quantum yield of fluorophores embedded in the fibers. Calculation of the ensemble-averaged fluorescence enhancement unveils the possibility of strongly enhancing the overall emission intensity for structures with size twice the diameter of the embedded metal particles. These new, hybrid fluorescent systems with localized enhanced emission, and the general nanowire-enhanced MEF effects associated to them, are highly relevant for developing nanoscale light-emitting devices with high efficiency and intercoupled through nanofiber networks, highly sensitive optical sensors, and novel laser architectures. © 2018 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA Weinheim.

Electric field control of magnetoresistance in InP nanowires with ferromagnetic contacts.

PubMed

Zwanenburg, F A; van der Mast, D W; Heersche, H B; Kouwenhoven, L P; Bakkers, E P A M

2009-07-01

We demonstrate electric field control of sign and magnitude of the magnetoresistance in InP nanowires with ferromagnetic contacts. The sign change in the magnetoresistance is directly correlated with a sign change in the transconductance. Additionally, the magnetoresistance is shown to persist at such a high bias that Coulomb blockade has been lifted. We also observe the magnetoresistance when one of the ferromagnets is replaced by a nonmagnetic metal. We conclude that it must be induced by a single ferromagnetic contact, and that spin transport can be ruled out as the origin. Our results emphasize the importance of a systematic investigation of spin-valve devices in order to discriminate between ambiguous interpretations.

Organic nanowire hierarchy over fabric platform for flexible cold cathode

NASA Astrophysics Data System (ADS)

Maiti, Soumen; Narayan Maiti, Uday; Pal, Shreyasi; Chattopadhyay, Kalyan Kumar

2013-11-01

Organic charge transfer (CT) complexes initiated a growing interest in modern electronic devices owing to their easy processability and unique characteristics. In this work, three-dimensional field emitters comprising metal-organic charge transfer complex nanostructures of AgTCNQ and CuTCNQ (TCNQ, 7,7,8,8-tetracyanoquinodimethane) over flexible fabric substrate are realized. Deliberate control over the reaction parameter during organic solid phase reaction leads to modification in structural parameters of the nanowires (i.e. length, diameter) as well as their arrangement atop the carbon fibers. The optimized arrays of AgTCNQ and CuTCNQ nanowires exhibit excellent field electron emission performance with very low turn-on (1.72 and 2.56 V μm-1) and threshold fields (4.21 and 6.33 V μm-1) respectively, which are comparable to those of the best organic field emitters reported to date. The underlying conducting carbon cloth with special woven-like geometry not only offers a flexible platform for nanowire growth, but also provides an additional field enhancement to ease the electron emission.

Length-dependent mechanical properties of gold nanowires

NASA Astrophysics Data System (ADS)

Han, Jing; Fang, Liang; Sun, Jiapeng; Han, Ying; Sun, Kun

2012-12-01

The well-known "size effect" is not only related to the diameter but also to the length of the small volume materials. It is unfortunate that the length effect on the mechanical behavior of nanowires is rarely explored in contrast to the intensive studies of the diameter effect. The present paper pays attention to the length-dependent mechanical properties of <111>-oriented single crystal gold nanowires employing the large-scale molecular dynamics simulation. It is discovered that the ultrashort Au nanowires exhibit a new deformation and failure regime-high elongation and high strength. The constrained dislocation nucleation and transient dislocation slipping are observed as the dominant mechanism for such unique combination of high strength and high elongation. A mechanical model based on image force theory is developed to provide an insight to dislocation nucleation and capture the yield strength and nucleation site of first partial dislocation indicated by simulation results. Increasing the length of the nanowires, the ductile-to-brittle transition is confirmed. And the new explanation is suggested in the predict model of this transition. Inspired by the superior properties, a new approach to strengthen and toughen nanowires-hard/soft/hard sandwich structured nanowires is suggested. A preliminary evidence from the molecular dynamics simulation corroborates the present opinion.

Synthesis and characterization of single-crystalline zinc tin oxide nanowires

NASA Astrophysics Data System (ADS)

Shi, Jen-Bin; Wu, Po-Feng; Lin, Hsien-Sheng; Lin, Ya-Ting; Lee, Hsuan-Wei; Kao, Chia-Tze; Liao, Wei-Hsiang; Young, San-Lin

2014-05-01

Crystalline zinc tin oxide (ZTO; zinc oxide with heavy tin doping of 33 at.%) nanowires were first synthesized using the electrodeposition and heat treatment method based on an anodic aluminum oxide (AAO) membrane, which has an average diameter of about 60 nm. According to the field emission scanning electron microscopy (FE-SEM) results, the synthesized ZTO nanowires are highly ordered and have high wire packing densities. The length of ZTO nanowires is about 4 μm, and the aspect ratio is around 67. ZTO nanowires with a Zn/(Zn + Sn) atomic ratio of 0.67 (approximately 2/3) were observed from an energy dispersive spectrometer (EDS). X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrated that the ZTO nanowire is hexagonal single-crystalline. The study of ultraviolet/visible/near-infrared (UV/Vis/NIR) absorption showed that the ZTO nanowire is a wide-band semiconductor with a band gap energy of 3.7 eV.

Synthesis and characterization of single-crystalline zinc tin oxide nanowires.

PubMed

Shi, Jen-Bin; Wu, Po-Feng; Lin, Hsien-Sheng; Lin, Ya-Ting; Lee, Hsuan-Wei; Kao, Chia-Tze; Liao, Wei-Hsiang; Young, San-Lin

2014-01-01

Crystalline zinc tin oxide (ZTO; zinc oxide with heavy tin doping of 33 at.%) nanowires were first synthesized using the electrodeposition and heat treatment method based on an anodic aluminum oxide (AAO) membrane, which has an average diameter of about 60 nm. According to the field emission scanning electron microscopy (FE-SEM) results, the synthesized ZTO nanowires are highly ordered and have high wire packing densities. The length of ZTO nanowires is about 4 μm, and the aspect ratio is around 67. ZTO nanowires with a Zn/(Zn + Sn) atomic ratio of 0.67 (approximately 2/3) were observed from an energy dispersive spectrometer (EDS). X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrated that the ZTO nanowire is hexagonal single-crystalline. The study of ultraviolet/visible/near-infrared (UV/Vis/NIR) absorption showed that the ZTO nanowire is a wide-band semiconductor with a band gap energy of 3.7 eV.

Electrical and optical evaluation of n-type doping in In x Ga(1‑x)P nanowires

NASA Astrophysics Data System (ADS)

Zeng, Xulu; Mourão, Renato T.; Otnes, Gaute; Hultin, Olof; Dagytė, Vilgailė; Heurlin, Magnus; Borgström, Magnus T.

2018-06-01

To harvest the benefits of III–V nanowires in optoelectronic devices, the development of ternary materials with controlled doping is needed. In this work, we performed a systematic study of n-type dopant incorporation in dense In x Ga(1‑x)P nanowire arrays using tetraethyl tin (TESn) and hydrogen sulfide (H2S) as dopant precursors. The morphology, crystal structure and material composition of the nanowires were characterized by use of scanning electron microscopy, transmission electron microscopy and energy dispersive x-ray analysis. To investigate the electrical properties, the nanowires were broken off from the substrate and mechanically transferred to thermally oxidized silicon substrates, after which electron beam lithography and metal evaporation were used to define electrical contacts to selected nanowires. Electrical characterization, including four-probe resistivity and Hall effect, as well as back-gated field effect measurements, is combined with photoluminescence spectroscopy to achieve a comprehensive evaluation of the carrier concentration in the doped nanowires. We measure a carrier concentration of ∼1 × 1016 cm‑3 in nominally intrinsic nanowires, and the maximum doping level achieved by use of TESn and H2S as dopant precursors using our parameters is measured to be ∼2 × 1018 cm‑3, and ∼1 × 1019 cm‑3, respectively (by Hall effect measurements). Hence, both TESn and H2S are suitable precursors for a wide range of n-doping levels in In x Ga(1‑x)P nanowires needed for optoelectronic devices, grown via the vapor–liquid–solid mode.

Optically controllable nanobreaking of metallic nanowires

NASA Astrophysics Data System (ADS)

Zhou, Lina; Lu, Jinsheng; Yang, Hangbo; Luo, Si; Wang, Wei; Lv, Jun; Qiu, Min; Li, Qiang

2017-02-01

Nanobreaking of nanowires has shown its necessity for manufacturing integrated nanodevices as nanojoining does. In this letter, we develop a method for breaking gold pentagonal nanowires by taking advantage of the photothermal effect with a 532 nm continuous-wave (CW) laser. The critical power required for nanobreaking is much lower for perpendicular polarization than that for parallel polarization. By controlling the polarization and the power of the irradiation light for nanobreaking, the nanowires can be cut into segments with gap widths ranging from dozens of nanometers to several micrometers. This CW light-induced single point nanobreaking of metallic nanowires provides a highly useful and promising method in constructing nanosystems.

Magnetic field-directed hybrid anisotropic nanocomposites.

PubMed

Gong, Maogang; Zhang, Jingming; Ren, Shenqiang

2018-08-24

A facile bottom-up approach is developed to grow magnetic metallic Cu/FeCo (core/shell) nanowires, where their distribution and orientation can be controlled by magnetic field. The nanocomposites consisting of a ferroelectric polymer matrix and magnetic nanowire arrays exhibit the orientation-controlled anisotropy and interfacial magnetoelectric coupling effect.

Effect of Growth Parameters on SnO2 Nanowires Growth by Electron Beam Evaporation Method

NASA Astrophysics Data System (ADS)

Rakesh Kumar, R.; Manjula, Y.; Narasimha Rao, K.

2018-02-01

Tin oxide (SnO2) nanowires were synthesized via catalyst assisted VLS growth mechanism by the electron beam evaporation method at a growth temperature of 450 °C. The effects of growth parameters such as evaporation rate of Tin, catalyst film thickness, and different types of substrates on the growth of SnO2 nanowires were studied. Nanowires (NWs) growth was completely seized at higher tin evaporation rates due to the inability of the catalyst particle to initiate the NWs growth. Nanowires diameters were able to tune with catalyst film thickness. Nanowires growth was completely absent at higher catalyst film thickness due to agglomeration of the catalyst film. Optimum growth parameters for SnO2 NWs were presented. Nanocomposites such as Zinc oxide - SnO2, Graphene oxide sheets- SnO2 and Graphene nanosheets-SnO2 were able to synthesize at a lower substrate temperature of 450 °C. These nanocompsoites will be useful in enhancing the capacity of Li-ion batteries, the gas sensing response and also useful in increasing the photo catalytic activity.

Role of oxygen vacancies in visible emission and transport properties of indium oxide nanowires

NASA Astrophysics Data System (ADS)

Gali, Pradeep; Kuo, Fang-Ling; Shepherd, Nigel; Philipose, U.

2012-01-01

We report on the effect of oxygen vacancies on the defect-related emission and the electronic properties of In2O3 nanowires. The nanowires were synthesized by vapor phase transport and had diameters ranging from 80-100 nm and lengths over 10-20 μm, with a growth direction of [0 0 1]. The as-grown nanowires connected in an FET type of configuration show n-type conductivity, which is ascribed to the presence of intrinsic defects like oxygen vacancies in the nanowire. The resistivity, transconductance, field effect mobility and carrier concentration of the In2O3 nanowires were determined to be 1.82 × 10-2 Ω cm, 11.2 nS, 119 cm2 V-1 s-1 and 4.89 × 1017 cm-3, respectively. The presence of oxygen vacancies was also confirmed by photoluminescence measurements, which show a strong UV emission peak at 3.18 eV and defect peaks in the visible region at 2.85 eV, 2.66 eV and 2.5 eV. We present a technique of post-growth annealing in O2 environment and passivation with (NH4)2S to reduce the defect-induced emission.

Effect of the tilted magnetic field on the magnetosubbands and conductance in the bilayer quantum wire

NASA Astrophysics Data System (ADS)

Chwiej, T.

2016-10-01

We theoretically study the single electron magnetotransport in GaAs and InGaAs vertically stacked bilayer nanowires. In considered geometry, the tilted magnetic field is always perpendicular to the main (transport) axis of the quantum wire and, therefore its transverse and vertical components allow separately for changing the magnitude of intralayer and interlayer subbands mixing. We study the changes introduced to energy dispersion relation E(k) by tilted magnetic field of strength up to several tesla and analyze their origins for symmetric as well as asymmetric confining potentials in the growth direction. Calculated energy dispersion relations are thereafter used to show that the value of a conductance of the bilayer nanowire may abruptly rise as well as fall by few conductance quanta when the Fermi energy in nanosystem is changed. It is also shown that such conductance oscillations, in conjunction with spin Zeeman effect, may give a moderately spin polarized current in the bilayer nanowire.

Manifestations of Surface States in the Longitudinal Magnetoresistance of an Array of Bi Nanowires

NASA Astrophysics Data System (ADS)

Latyshev, Yu. I.; Frolov, A. V.; Volkov, V. A.; Wade, T.; Prudkoglyad, V. A.; Orlov, A. P.; Pudalov, V. M.; Konczykowski, M.

2018-04-01

The longitudinal magnetoresistance of the array of parallel-oriented bismuth nanowires each 100 nm in diameter grown by electrochemical deposition in nanopores of an Al2O3 membrane has been studied in magnetic fields up to 14 T and at temperatures down to 0.3 K. The resistance increases with the field and reaches a broad maximum in fields about 10 T. An anomalous increase in the resistance in weak fields is qualitatively consistent with the suppression of the antilocalization correction to the resistance, and the maximum is qualitatively associated with the classical size effect. Near the maximum at temperatures below 0.8 K, manifestations of reproducible magneto-oscillations of the resistance, which are periodic in field, have been detected. The period of these oscillations is close to a value corresponding to the passage of the flux quantum hc/ e through the section of a nanowire. The Fourier analysis also confirms that the oscillations are periodic. This result is similar to the manifestation the Aharonov-Bohm effect caused by conducting surface states of Dirac fermions occupying L-valleys of bismuth.

Gate-tunable transport characteristics of Bi2S3 nanowire transistors

NASA Astrophysics Data System (ADS)

Kilcoyne, Colin; Ali, Ahmed H.; Alsaqqa, Ali M.; Rahman, Ajara A.; Whittaker-Brooks, Luisa; Sambandamurthy, Ganapathy

2018-02-01

Electrical transport and resistance noise spectroscopy measurements are performed on individual, single crystalline Bi2S3 nanowires in the field-effect geometry. The nanowires exhibit n-type conduction and device characteristics such as activation energy, ON/OFF ratio, and mobility are calculated over a temperature range of 120-320 K and at several bias values. The noise magnitude is measured between 0.01 and 5 Hz at several gate voltages as the device turns from it's OFF to ON state. The presence of mid-gap states which act as charge traps within the band gap can potentially explain the observed transport characteristics. Sulfur vacancies are the likely origin of these mid-gap states which makes Bi2S3 nanowires appealing for defect engineering as a means to enhance its optoelectronic properties and also to better understand the important role of defects in nanoscale semiconductors.

Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.

PubMed

Egard, M; Johansson, S; Johansson, A-C; Persson, K-M; Dey, A W; Borg, B M; Thelander, C; Wernersson, L-E; Lind, E

2010-03-10

In this letter we report on high-frequency measurements on vertically standing III-V nanowire wrap-gate MOSFETs (metal-oxide-semiconductor field-effect transistors). The nanowire transistors are fabricated from InAs nanowires that are epitaxially grown on a semi-insulating InP substrate. All three terminals of the MOSFETs are defined by wrap around contacts. This makes it possible to perform high-frequency measurements on the vertical InAs MOSFETs. We present S-parameter measurements performed on a matrix consisting of 70 InAs nanowire MOSFETs, which have a gate length of about 100 nm. The highest unity current gain cutoff frequency, f(t), extracted from these measurements is 7.4 GHz and the maximum frequency of oscillation, f(max), is higher than 20 GHz. This demonstrates that this is a viable technique for fabricating high-frequency integrated circuits consisting of vertical nanowires.

Effects of Defects on the Mechanical Properties of Kinked Silicon Nanowires.

PubMed

Chen, Yun; Zhang, Cheng; Li, Liyi; Tuan, Chia-Chi; Chen, Xin; Gao, Jian; He, Yunbo; Wong, Ching-Ping

2017-12-01

Kinked silicon nanowires (KSiNWs) have many special properties that make them attractive for a number of applications. The mechanical properties of KSiNWs play important roles in the performance of sensors. In this work, the effects of defects on the mechanical properties of KSiNWs are studied using molecular dynamics simulations and indirectly validated by experiments. It is found that kinks are weak points in the nanowire (NW) because of inharmonious deformation, resulting in a smaller elastic modulus than that of straight NWs. In addition, surface defects have more significant effects on the mechanical properties of KSiNWs than internal defects. The effects of the width or the diameter of the defects are larger than those of the length of the defects. Overall, the elastic modulus of KSiNWs is not sensitive to defects; therefore, KSiNWs have a great potential as strain or stress sensors in special applications.

Growth mechanism of surface roughed platinum nanowires through electrodeposition current control and their electrochemical applications

NASA Astrophysics Data System (ADS)

Ruan, Dajiang

The aim of this work is to investigate the effect of current density on the grain size and surface morphology of electrodeposited platinum nanowires and their applications. Platinum (Pt) nanowires were fabricated by a galvanostatic electrodeposition method in a porous anodic alumina oxide (AAO) template with different current densities. Both direct current and pulse current electrodeposition were used to synthesize the Pt nanowires. The grain size and surface morphology of the Pt nanowires were studied by field emission scanning electron microscopy (FE-SEM), transmission electron microcopy (TEM) and X-ray diffraction (XRD). The experimental results showed that the current density was the key factor to control the surface roughness. The surface of the Pt nanowires became rougher and the grain sizes were increased by increasing the current densities. From the experimental results, a growth mechanism of Pt nanowires based on progressive nucleation and crystallization was proposed in order to find out the relationship between the surface morphology and current density. The electrochemical properties and catalytic activities of these surface roughed Pt nanowires were investigated in the detection of H20 2 and for the methanol oxidation. Cyclic voltammograms of Pt nanowire modified electrodes were obtained using a potentiostat, which showed that rougher Pt nanowires have higher response and better activity than that of smooth nanowires. For H202 detection, the effect of scan rate and H202 concentration were studied and it was found that the peak current for hydrogen peroxide reduction became larger with the increasing of either scan rate or H202 concentration. It can be inferred that the process of electrocatalytic hydrogen peroxide reduction may be controlled by diffusion of hydrogen peroxide and the Pt nanowire modified glassy carbon electrode (GCE) is well suited for the detection of H202. From the relationship between the peak current and square root of scan rates

Visualization of multipolar longitudinal and transversal surface plasmon modes in nanowire dimers.

PubMed

Alber, Ina; Sigle, Wilfried; Müller, Sven; Neumann, Reinhard; Picht, Oliver; Rauber, Markus; van Aken, Peter A; Toimil-Molares, Maria Eugenia

2011-12-27

We study the transversal and longitudinal localized surface plasmon resonances in single nanowires and nanowire dimers excited by the fast traveling electron beam in a transmission electron microscope equipped with high-resolution electron energy-loss spectroscopy. Bright and dark longitudinal modes up to the fifth order are resolved on individual metallic nanowires. On nanowire dimers, mode splitting into bonding and antibonding is measured up to the third order for several dimers with various aspect ratio and controlled gap size. We observe that the electric field maxima of the bonding modes are shifted toward the gap, while the electric field maxima of the antibonding modes are shifted toward the dimer ends. Finally, we observe that the transversal mode is not detected in the region of the dimer gap and decays away from the rod more rapidly than the longitudinal modes.

Lasing in robust cesium lead halide perovskite nanowires

PubMed Central

Eaton, Samuel W.; Lai, Minliang; Gibson, Natalie A.; Wong, Andrew B.; Dou, Letian; Ma, Jie; Wang, Lin-Wang; Leone, Stephen R.; Yang, Peidong

2016-01-01

The rapidly growing field of nanoscale lasers can be advanced through the discovery of new, tunable light sources. The emission wavelength tunability demonstrated in perovskite materials is an attractive property for nanoscale lasers. Whereas organic–inorganic lead halide perovskite materials are known for their instability, cesium lead halides offer a robust alternative without sacrificing emission tunability or ease of synthesis. Here, we report the low-temperature, solution-phase growth of cesium lead halide nanowires exhibiting low-threshold lasing and high stability. The as-grown nanowires are single crystalline with well-formed facets, and act as high-quality laser cavities. The nanowires display excellent stability while stored and handled under ambient conditions over the course of weeks. Upon optical excitation, Fabry–Pérot lasing occurs in CsPbBr3 nanowires with an onset of 5 μJ cm−2 with the nanowire cavity displaying a maximum quality factor of 1,009 ± 5. Lasing under constant, pulsed excitation can be maintained for over 1 h, the equivalent of 109 excitation cycles, and lasing persists upon exposure to ambient atmosphere. Wavelength tunability in the green and blue regions of the spectrum in conjunction with excellent stability makes these nanowire lasers attractive for device fabrication. PMID:26862172

Lasing in robust cesium lead halide perovskite nanowires

DOE PAGES

Eaton, Samuel W.; Lai, Minliang; Gibson, Natalie A.; ...

2016-02-09

The rapidly growing field of nanoscale lasers can be advanced through the discovery of new, tunable light sources. The emission wavelength tunability demonstrated in perovskite materials is an attractive property for nanoscale lasers. Whereas organic-inorganic lead halide perovskite materials are known for their instability, cesium lead halides offer a robust alternative without sacrificing emission tunability or ease of synthesis. Here, we report the low-temperature, solution-phase growth of cesium lead halide nanowires exhibiting low-threshold lasing and high stability. The as-grown nanowires are single crystalline with well-formed facets, and act as high-quality laser cavities. The nanowires display excellent stability while stored andmore » handled under ambient conditions over the course of weeks. Upon optical excitation, Fabry-Pérot lasing occurs in CsPbBr 3 nanowires with an onset of 5 μJ cm -2 with the nanowire cavity displaying a maximum quality factor of 1,009 ± 5. Lasing under constant, pulsed excitation can be maintained for over 1 h, the equivalent of 10 9 excitation cycles, and lasing persists upon exposure to ambient atmosphere. Wavelength tunability in the green and blue regions of the spectrum in conjunction with excellent stability makes these nanowire lasers attractive for device fabrication.« less

Plasmon resonant cavities in vertical nanowire arrays

DOEpatents

Bora, Mihail; Bond, Tiziana C.; Fasenfest, Benjamin J.; Behymer, Elaine M.

2014-07-15

Tunable plasmon resonant cavity arrays in paired parallel nanowire waveguides are presented. Resonances can be observed when the waveguide length is an odd multiple of quarter plasmon wavelengths, consistent with boundary conditions of node and antinode at the ends. Two nanowire waveguides can satisfy the dispersion relation of a planar metal-dielectric-metal waveguide of equivalent width equal to the square field average weighted gap. Confinement factors of over 10.sup.3 are possible due to plasmon focusing in the inter-wire space.

The Self- and Directed Assembly of Nanowires

NASA Astrophysics Data System (ADS)

Smith, Benjamin David

This thesis explores the self- and directed assembly of nanowires. Specifically, we examine the driving forces behind nanowire self-assembly and the macro-structures that are formed. Particle-dense, oriented nanowire structures show promise in the fields of photonics, energy, sensing, catalysis, and electronics. Arrays of spherical particles have already found uses in electronic inks, sensing arrays, and many other commercial applications; but, it is a challenge to create specific arrays of morphologically and/or compositionally anisotropic particles. The following chapters illuminate the interactions that drive the assembly of anisotropic particles in high density solutions in the absence of applied fields or solution drying. Special emphasis is placed on the structures that are formed. The properties of micro- and nanoparticles and their assembly are introduced in Chapter 1. In particular, the properties of shape and material anisotropic particles are highlighted, while challenges in producing desired arrays are discussed. In this thesis, metallic nanowires of increasing complexity were used to examine the self-assembly behavior of both shape and material anisotropic particles. Nanowires were synthesized through templated electrodeposition. In this process, porous alumina membranes served as a template in which metal salts were reduced to form particles. Upon template dissolution, billions of nominally identical particles were released. We specifically focused on segmented, metallic nanowires 2-13 mum in length and 180 to 350 nm in diameter. Since these particles have strong van der Waals (VDWs) attractions, an electrostatically repulsive coating was necessary to prevent aggregation; we used small molecule, DNA, or amorphous silica coatings. Nanowires and their coatings were characterized by electron microscopy. In order to study self-assembly behavior, particle-dense aqueous suspensions were placed within an assembly chamber defined by a silicone spacer. The

Strain-induced structural defects and their effects on the electrochemical performances of silicon core/germanium shell nanowire heterostructures

DOE PAGES

Lin, Yung-Chen; Kim, Dongheun; Li, Zhen; ...

2016-12-14

Here we report on strain-induced structural defect formation in core Si nanowire of Si/Ge core/shell nanowire heterostructure and influences of the structural defects on the electrochemical performances in lithium-ion battery anodes based on Si/Ge core/shell nanowire heterostructures. The induced structural defects consisting of stacking faults and dislocations in the core Si nanowire were observed for the first time. The generation of stacking faults in Si/Ge core/shell nanowire heterostructure is observed to prefer settling in either only Ge shell region or in both Ge shell and Si core regions and is associated with the increase of the shell volume fraction. Themore » relax of misfit strain in [112] oriented core/shell nanowire heterostructure leads to subsequent gliding of Shockley partial dislocations, preferentially forming the twins. The observation of cross-over defect formation is of great importance for the understanding of heteroepitaxy in radial heterostructures at nanoscale and building the three dimensional heterostructures for the various applications. In addition, the effect of the defect formation on nanomaterial’s functionality is investigated by electrochemical performance test. The Si/Ge core/shell nanowire heterostructures enhance the gravimetric capacity of lithium ion battery anodes under fast charging/discharging rates compared to Si nanowires. However, the induced structural defects hamper lithiation of the Si/Ge core/shell nanowire heterostructure.« less

Strain-induced structural defects and their effects on the electrochemical performances of silicon core/germanium shell nanowire heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Yung-Chen; Kim, Dongheun; Li, Zhen

Here we report on strain-induced structural defect formation in core Si nanowire of Si/Ge core/shell nanowire heterostructure and influences of the structural defects on the electrochemical performances in lithium-ion battery anodes based on Si/Ge core/shell nanowire heterostructures. The induced structural defects consisting of stacking faults and dislocations in the core Si nanowire were observed for the first time. The generation of stacking faults in Si/Ge core/shell nanowire heterostructure is observed to prefer settling in either only Ge shell region or in both Ge shell and Si core regions and is associated with the increase of the shell volume fraction. Themore » relax of misfit strain in [112] oriented core/shell nanowire heterostructure leads to subsequent gliding of Shockley partial dislocations, preferentially forming the twins. The observation of cross-over defect formation is of great importance for the understanding of heteroepitaxy in radial heterostructures at nanoscale and building the three dimensional heterostructures for the various applications. In addition, the effect of the defect formation on nanomaterial’s functionality is investigated by electrochemical performance test. The Si/Ge core/shell nanowire heterostructures enhance the gravimetric capacity of lithium ion battery anodes under fast charging/discharging rates compared to Si nanowires. However, the induced structural defects hamper lithiation of the Si/Ge core/shell nanowire heterostructure.« less

Magnetization reversal dynamics in Co nanowires with competing magnetic anisotropies

NASA Astrophysics Data System (ADS)

Pal, Semanti; Saha, Susmita; Polley, Debanjan; Barman, Anjan

2011-12-01

We present the magnetization reversal dynamics of Co nanowires with competing magnetic anisotropies. The aspect ratio ( R) of the nanowires is varied between 2.5 and 60, and we observe a cross-over of the directions of the magnetic easy and hard axes at R=6.8. Micromagnetic simulations qualitatively reproduce the observed cross-over and give detailed insight into the reversal mechanisms associated with the cross-over. The reversal mechanism for a field applied along the long axis of the nanowire exhibits a quasi-coherent rotation mode and a corkscrew-like mode, respectively, above and below the cross-over, with the formation of a Bloch domain near the cross-over region. For a field applied along the short axis, the reversal occurs by nucleation and propagation of reversed domains from the two ends of the nanowires for very high values of the aspect ratio down to the cross-over region, but it transforms into quasi-coherent rotation mode for smaller aspect ratios (below the cross-over region).

Epitaxy of advanced nanowire quantum devices

NASA Astrophysics Data System (ADS)

Gazibegovic, Sasa; Car, Diana; Zhang, Hao; Balk, Stijn C.; Logan, John A.; de Moor, Michiel W. A.; Cassidy, Maja C.; Schmits, Rudi; Xu, Di; Wang, Guanzhong; Krogstrup, Peter; Op Het Veld, Roy L. M.; Zuo, Kun; Vos, Yoram; Shen, Jie; Bouman, Daniël; Shojaei, Borzoyeh; Pennachio, Daniel; Lee, Joon Sue; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.

2017-08-01

Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a superconductor. To exploit the potential of non-Abelian anyons—which are key elements of topological quantum computing—fully, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of crystalline nanowires coupled to superconducting islands. Here we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks with a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire ‘hashtags’ reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase-coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap (with vanishing sub-gap conductance) is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which have the potential to become key components of various quantum devices.

Parallel Nanoshaping of Brittle Semiconductor Nanowires for Strained Electronics.

PubMed

Hu, Yaowu; Li, Ji; Tian, Jifa; Xuan, Yi; Deng, Biwei; McNear, Kelly L; Lim, Daw Gen; Chen, Yong; Yang, Chen; Cheng, Gary J

2016-12-14

Semiconductor nanowires (SCNWs) provide a unique tunability of electro-optical property than their bulk counterparts (e.g., polycrystalline thin films) due to size effects. Nanoscale straining of SCNWs is desirable to enable new ways to tune the properties of SCNWs, such as electronic transport, band structure, and quantum properties. However, there are two bottlenecks to prevent the real applications of straining engineering of SCNWs: strainability and scalability. Unlike metallic nanowires which are highly flexible and mechanically robust for parallel shaping, SCNWs are brittle in nature and could easily break at strains slightly higher than their elastic limits. In addition, the ability to generate nanoshaping in large scale is limited with the current technologies, such as the straining of nanowires with sophisticated manipulators, nanocombing NWs with U-shaped trenches, or buckling NWs with prestretched elastic substrates, which are incompatible with semiconductor technology. Here we present a top-down fabrication methodology to achieve large scale nanoshaping of SCNWs in parallel with tunable elastic strains. This method utilizes nanosecond pulsed laser to generate shock pressure and conformably deform the SCNWs onto 3D-nanostructured silicon substrates in a scalable and ultrafast manner. A polymer dielectric nanolayer is integrated in the process for cushioning the high strain-rate deformation, suppressing the generation of dislocations or cracks, and providing self-preserving mechanism for elastic strain storage in SCNWs. The elastic strain limits have been studied as functions of laser intensity, dimensions of nanowires, and the geometry of nanomolds. As a result of 3D straining, the inhomogeneous elastic strains in GeNWs result in notable Raman peak shifts and broadening, which bring more tunability of the electrical-optical property in SCNWs than traditional strain engineering. We have achieved the first 3D nanostraining enhanced germanium field-effect

Mapping Free-Carriers in Multijunction Silicon Nanowires Using Infrared Near-Field Optical Microscopy.

PubMed

Ritchie, Earl T; Hill, David J; Mastin, Tucker M; Deguzman, Panfilo C; Cahoon, James F; Atkin, Joanna M

2017-11-08

We report the use of infrared (IR) scattering-type scanning near-field optical microscopy (s-SNOM) as a nondestructive method to map free-carriers in axially modulation-doped silicon nanowires (SiNWs) with nanoscale spatial resolution. Using this technique, we can detect local changes in the electrically active doping concentration based on the infrared free-carrier response in SiNWs grown using the vapor-liquid-solid (VLS) method. We demonstrate that IR s-SNOM is sensitive to both p-type and n-type free-carriers for carrier densities above ∼1 × 10 19 cm -3 . We also resolve subtle changes in local conductivity properties, which can be correlated with growth conditions and surface effects. The use of s-SNOM is especially valuable in low mobility materials such as boron-doped p-type SiNWs, where optimization of growth has been difficult to achieve due to the lack of information on dopant distribution and junction properties. s-SNOM can be widely employed for the nondestructive characterization of nanostructured material synthesis and local electronic properties without the need for contacts or inert atmosphere.

Dynamics of Charge Carriers in Silicon Nanowire Photoconductors Revealed by Photo Hall Effect Measurements.

PubMed

Chen, Kaixiang; Zhao, Xiaolong; Mesli, Abdelmadjid; He, Yongning; Dan, Yaping

2018-04-24

Photoconductors have extraordinarily high gain in quantum efficiency, but the origin of the gain has remained in dispute for decades. In this work, we employ photo Hall effect to reveal the gain mechanisms by probing the dynamics of photogenerated charge carriers in silicon nanowire photoconductors. The results reveal that a large number of photogenerated minority electrons are localized in the surface depletion region and surface trap states. The same number of excess hole counterparts is left in the nanowire conduction channel, resulting in the fact that excess holes outnumber the excess electrons in the nanowire conduction channel by orders of magnitude. The accumulation of the excess holes broadens the conduction channel by narrowing down the depletion region, which leads to the experimentally observed high photo gain.

Electrodeposited highly-ordered manganese oxide nanowire arrays for supercapacitors

NASA Astrophysics Data System (ADS)

Liu, Haifeng; Lu, Bingqiang; Wei, Shuiqiang; Bao, Mi; Wen, Yanxuan; Wang, Fan

2012-07-01

Large arrays of well-aligned Mn oxide nanowires were prepared by electrodeposition using anodic aluminum oxide templates. The sizes of nanowires were tuned by varying the electrotype solution involved and the MnO2 nanowires with 10 μm in length were obtained in a neutral KMnO4 bath for 1 h. MnO2 nanowire arrays grown on conductor substance save the tedious electrode-making process, and electrochemical characterization demonstrates that the MnO2 nanowire arrays electrode has good capacitive behavior. Due to the limited mass transportation in narrow spacing, the spacing effects between the neighbor nanowires have show great influence to the electrochemical performance.

Bending nanowire growth in solution by mechanical disturbance.

PubMed

Wang, Chao; Wei, Yujie; Jiang, Hongyuan; Sun, Shouheng

2010-06-09

The effect of mechanical disturbance on one-dimensional nanocrystal growth in solution phase is investigated by controlled growth of Au nanowires with and without stirring. While a static growth leads to straight, single-crystal Au nanowires, the mechanic disturbance by stirring tends to bend the nanowire growth, yielding nanowire kinks abundant in various types of crystal defects including dislocations, twin boundaries, and grain boundaries. Mechanical modeling and analysis is introduced to elucidate the nanowire growth mechanisms in these two conditions. The provided fundamental understanding of crystal defect formation at nanoscale could be applied to guide the development of advanced nanomaterials with shape control and unique mechanical properties.

High-throughput electrical measurement and microfluidic sorting of semiconductor nanowires.

PubMed

Akin, Cevat; Feldman, Leonard C; Durand, Corentin; Hus, Saban M; Li, An-Ping; Hui, Ho Yee; Filler, Michael A; Yi, Jingang; Shan, Jerry W

2016-05-24

Existing nanowire electrical characterization tools not only are expensive and require sophisticated facilities, but are far too slow to enable statistical characterization of highly variable samples. They are also generally not compatible with further sorting and processing of nanowires. Here, we demonstrate a high-throughput, solution-based electro-orientation-spectroscopy (EOS) method, which is capable of automated electrical characterization of individual nanowires by direct optical visualization of their alignment behavior under spatially uniform electric fields of different frequencies. We demonstrate that EOS can quantitatively characterize the electrical conductivities of nanowires over a 6-order-of-magnitude range (10(-5) to 10 S m(-1), corresponding to typical carrier densities of 10(10)-10(16) cm(-3)), with different fluids used to suspend the nanowires. By implementing EOS in a simple microfluidic device, continuous electrical characterization is achieved, and the sorting of nanowires is demonstrated as a proof-of-concept. With measurement speeds two orders of magnitude faster than direct-contact methods, the automated EOS instrument enables for the first time the statistical characterization of highly variable 1D nanomaterials.

Enhanced photoluminescence and field-emission behavior of vertically well aligned arrays of In-doped ZnO Nanowires.

PubMed

Ahmad, Mashkoor; Sun, Hongyu; Zhu, Jing

2011-04-01

Vertically oriented well-aligned Indium doped ZnO nanowires (NWs) have been successfully synthesized on Au-coated Zn substrate by controlled thermal evaporation. The effect of indium dopant on the optical and field-emission properties of these well-aligned ZnO NWs is investigated. The doped NWs are found to be single crystals grown along the c-axis. The composition of the doped NWs is confirmed by X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS), and X-ray photospectroscopy (XPS). The photoluminescence (PL) spectra of doped NWs having a blue-shift in the UV region show a prominent tuning in the optical band gap, without any significant peak relating to intrinsic defects. The turn-on field of the field emission is found to be ∼2.4 V μm(-1) and an emission current density of 1.13 mA cm(-2) under the field of 5.9 V μm(-1). The field enhancement factor β is estimated to be 9490 ± 2, which is much higher than that of any previous report. Furthermore, the doped NWs exhibit good emission current stability with a variation of less than 5% during a 200 s under a field of 5.9 V μm(-1). The superior field emission properties are attributed to the good alignment, high aspect ratio, and better crystallinity of In-doped NWs. © 2011 American Chemical Society

Giant enhancement of the carrier mobility in silicon nanowires with diamond coating.

PubMed

Fonoberov, Vladimir A; Balandin, Alexander A

2006-11-01

We show theoretically that the low-field carrier mobility in silicon nanowires can be greatly enhanced by embedding the nanowires within a hard material such as diamond. The electron mobility in the cylindrical silicon nanowires with 4-nm diameter, which are coated with diamond, is 2 orders of magnitude higher at 10 K and a factor of 2 higher at room temperature than the mobility in a free-standing silicon nanowire. The importance of this result for the downscaled architectures and possible silicon-carbon nanoelectronic devices is augmented by an extra benefit of diamond, a superior heat conductor, for thermal management.

Direct selective growth of ZnO nanowire arrays from inkjet-printed zinc acetate precursor on a heated substrate

PubMed Central

2013-01-01

Inkjet printing of functional materials has drawn tremendous interest as an alternative to the conventional photolithography-based microelectronics fabrication process development. We introduce direct selective nanowire array growth by inkjet printing of Zn acetate precursor ink patterning and subsequent hydrothermal ZnO local growth without nozzle clogging problem which frequently happens in nanoparticle inkjet printing. The proposed process can directly grow ZnO nanowires in any arbitrary patterned shape, and it is basically very fast, low cost, environmentally benign, and low temperature. Therefore, Zn acetate precursor inkjet printing-based direct nanowire local growth is expected to give extremely high flexibility in nanomaterial patterning for high-performance electronics fabrication especially at the development stage. As a proof of concept of the proposed method, ZnO nanowire network-based field effect transistors and ultraviolet photo-detectors were demonstrated by direct patterned grown ZnO nanowires as active layer. PMID:24252130

Wedge disclination dipole in an embedded nanowire within the surface/interface elasticity

NASA Astrophysics Data System (ADS)

Shodja, Hossein M.; Rezazadeh-Kalehbasti, Shaghayegh; Gutkin, Mikhail Yu

2013-12-01

The elastic behavior of an arbitrary oriented wedge disclination dipole located inside a nanowire, which in turn is embedded in an infinite matrix, is studied within the surface/interface theory of elasticity. The corresponding boundary value problem is provided using complex potential functions. The potential functions are defined through modeling the wedge disclination in terms of an equivalent distribution of edge dislocations. The interface effects on the stress field and strain energy of the disclination dipole and image forces acting on it, the influence of relative shear moduli of the nanowire and the matrix, as well as the different characteristics of the interface are studied thoroughly. It is shown that the positive interface modulus leads to increased strain energy and extra repulsive forces on the disclination dipole. The noticeable effect of the negative interface modulus is the non-classical oscillations in the stress field of the disclination dipole and an extra attractive image force on it.

Dynamical formation of spatially localized arrays of aligned nanowires in plastic films with magnetic anisotropy.

PubMed

Fragouli, Despina; Buonsanti, Raffaella; Bertoni, Giovanni; Sangregorio, Claudio; Innocenti, Claudia; Falqui, Andrea; Gatteschi, Dante; Cozzoli, Pantaleo Davide; Athanassiou, Athanassia; Cingolani, Roberto

2010-04-27

We present a simple technique for magnetic-field-induced formation, assembling, and positioning of magnetic nanowires in a polymer film. Starting from a polymer/iron oxide nanoparticle casted solution that is allowed to dry along with the application of a weak magnetic field, nanocomposite films incorporating aligned nanocrystal-built nanowire arrays are obtained. The control of the dimensions of the nanowires and of their localization across the polymer matrix is achieved by varying the duration of the applied magnetic field, in combination with the evaporation dynamics. These multifunctional anisotropic free-standing nanocomposite films, which demonstrate high magnetic anisotropy, can be used in a wide field of technological applications, ranging from sensors to microfluidics and magnetic devices.

Cascade of Quantum Transitions and Magnetocaloric Anomalies in an Open Nanowire

NASA Astrophysics Data System (ADS)

Val'kov, V. V.; Mitskan, V. A.; Shustin, M. S.

2017-12-01

A sequence of magnetocaloric anomalies occurring with the change in a magnetic field H is predicted for an open nanowire with the Rashba spin-orbit coupling and the induced superconducting pairing potential. The nature of such anomalies is due to the cascade of quantum transitions related to the successive changes in the fermion parity of the nanowire ground state with the growth of the magnetic field. It is shown that the critical H c values fall within the parameter range corresponding to the nontrivial values of the Z 2 topological invariant of the corresponding 1D band Hamiltonian characteristic of the D symmetry class. It is demonstrated that such features in the behavior of the open nanowire are retained even in the presence of Coulomb interactions.

A sensitive and selective magnetic graphene composite-modified polycrystalline-silicon nanowire field-effect transistor for bladder cancer diagnosis.

PubMed

Chen, Hsiao-Chien; Chen, Yi-Ting; Tsai, Rung-Ywan; Chen, Min-Cheng; Chen, Shi-Liang; Xiao, Min-Cong; Chen, Chien-Lun; Hua, Mu-Yi

2015-04-15

In this study, we describe the urinary quantification of apolipoprotein A II protein (APOA2 protein), a biomarker for the diagnosis of bladder cancer, using an n-type polycrystalline silicon nanowire field-effect transistor (poly-SiNW-FET). The modification of poly-SiNW-FET by magnetic graphene with long-chain acid groups (MGLA) synthesized via Friedel-Crafts acylation was compared with that obtained using short-chain acid groups (MGSA). Compared with MGSA, the MGLA showed a higher immobilization degree and bioactivity to the anti-APOA2 antibody (Ab) due to its lower steric hindrance. In addition, the magnetic properties enabled rapid separation and purification during Ab immobilization, ultimately preserving its bioactivity. The Ab-MGLA/poly-SiNW-FET exhibited a linear dependence of relative response to the logarithmical concentration in a range between 19.5pgmL(-1) and 1.95µgmL(-1), with a limit of detection (LOD) of 6.7pgmL(-1). An additional washing step before measurement aimed at excluding the interfering biocomponents ensured the reliability of the assay. We conclude that our biosensor efficiently distinguishes mean values of urinary APOA2 protein concentrations between patients with bladder cancer (29-344ngmL(-1)) and those with hernia (0.425-9.47ngmL(-1)). Copyright © 2014 Elsevier B.V. All rights reserved.

Controlled propulsion and cargo transport of rotating nickel nanowires near a patterned solid surface.

PubMed

Zhang, Li; Petit, Tristan; Lu, Yang; Kratochvil, Bradley E; Peyer, Kathrin E; Pei, Ryan; Lou, Jun; Nelson, Bradley J

2010-10-26

We show that rotating Ni nanowires are capable of propulsion and transport of colloidal cargo near a complex surface. When dissimilar boundary conditions exist at the two ends of a nanowire, such as when a nanowire is near a wall, tumbling motion can be generated that leads to propulsion of the nanowire. The motion of the nanowire can be precisely controlled using a uniform rotating magnetic field. We investigate the propulsion mechanism and the trajectory of the nanowire during the tumbling motion and demonstrate cargo transport of a polystyrene microbead by the nanowire over a flat surface or across an open microchannel. The results imply that functionalized, ferromagnetic one-dimensional, tumbling nanostructures can be used for cell manipulation and targeted drug delivery in a low Reynolds number aqueous environment.

Silicon nanowire photodetectors made by metal-assisted chemical etching

NASA Astrophysics Data System (ADS)

Xu, Ying; Ni, Chuan; Sarangan, Andrew

2016-09-01

Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

High-k dielectric Al2O3 nanowire and nanoplate field effect sensors for improved pH sensing

PubMed Central

Reddy, Bobby; Dorvel, Brian R.; Go, Jonghyun; Nair, Pradeep R.; Elibol, Oguz H.; Credo, Grace M.; Daniels, Jonathan S.; Chow, Edmond K. C.; Su, Xing; Varma, Madoo; Alam, Muhammad A.

2011-01-01

Over the last decade, field-effect transistors (FETs) with nanoscale dimensions have emerged as possible label-free biological and chemical sensors capable of highly sensitive detection of various entities and processes. While significant progress has been made towards improving their sensitivity, much is yet to be explored in the study of various critical parameters, such as the choice of a sensing dielectric, the choice of applied front and back gate biases, the design of the device dimensions, and many others. In this work, we present a process to fabricate nanowire and nanoplate FETs with Al2O3 gate dielectrics and we compare these devices with FETs with SiO2 gate dielectrics. The use of a high-k dielectric such as Al2O3 allows for the physical thickness of the gate dielectric to be thicker without losing sensitivity to charge, which then reduces leakage currents and results in devices that are highly robust in fluid. This optimized process results in devices stable for up to 8 h in fluidic environments. Using pH sensing as a benchmark, we show the importance of optimizing the device bias, particularly the back gate bias which modulates the effective channel thickness. We also demonstrate that devices with Al2O3 gate dielectrics exhibit superior sensitivity to pH when compared to devices with SiO2 gate dielectrics. Finally, we show that when the effective electrical silicon channel thickness is on the order of the Debye length, device response to pH is virtually independent of device width. These silicon FET sensors could become integral components of future silicon based Lab on Chip systems. PMID:21203849

Silicon nanowires: where mechanics and optics meet at the nanoscale.

PubMed

Ramos, Daniel; Gil-Santos, Eduardo; Malvar, Oscar; Llorens, Jose M; Pini, Valerio; San Paulo, Alvaro; Calleja, Montserrat; Tamayo, Javier

2013-12-06

Mechanical transducers based on nanowires promise revolutionary advances in biological sensing and force microscopy/spectroscopy. A crucial step is the development of simple and non-invasive techniques able to detect displacements with subpicometer sensitivity per unit bandwidth. Here, we design suspended tapered silicon nanowires supporting a range of optical resonances that confine and efficiently scatter light in the visible range. Then, we develop an optical method for efficiently coupling the evanescent field to the regular interference pattern generated by an incoming laser beam and the reflected beam from the substrate underneath the nanowire. This optomechanical coupling is here applied to measure the displacement of 50 nm wide nanowires with sensitivity on the verge of 1 fm/Hz(1/2) at room temperature with a simple laser interferometry set-up. This method opens the door to the measurement of the Brownian motion of ultrashort nanowires for the detection of single biomolecular recognition events in liquids, and single molecule spectroscopy in vacuum.

Effect of carbon tetrabromide on the morphology of GaAs nanowires.

PubMed

Salehzadeh, O; Watkins, S P

2011-04-22

Carbon is a commonly used p-type dopant in planar III-V semiconductors, however its use in nanowire (NW) growth has been much less reported. In this work we show that the morphology of gold assisted GaAs NWs can be strongly modified by the presence of CBr(4) vapor during growth by metalorganic vapor phase epitaxy. GaAs NWs were grown under conditions which result in strong tapering and lateral growth at low growth temperatures by the use of triethylgallium (TEGa) instead of the more usual precursor, trimethylgallium (TMGa). Under these conditions, NWs grown in the presence of CBr(4) exhibit higher axial and lower radial growth rates, and negligible tapering compared with NWs grown in the absence of CBr(4) under the same conditions. We attribute this primarily to the suppression of the 2d growth rate by CBr(4), which enhances the axial growth rate of the nanowires. NWs grown with CBr(4) show stacking-fault-free zincblende structure, while the NWs grown without CBr(4) show a high density of stacking faults. This work underlines the striking effects which precursor chemistry can have on nanowire morphology.

As-Grown Gallium Nitride Nanowire Electromechanical Resonators

NASA Astrophysics Data System (ADS)

Montague, Joshua R.

individual nanowire properties. We observe nanowire-to-nanowire variations in the temperature dependence of GaN nanowire resonance frequency and in the observed mechanical dissipation. We also use this ensemble measurement technique to demonstrate unique, very low-loss resonance behavior at low temperatures. The low dissipation (and corresponding large Q values) observed in as-grown GaN nanowires also provides a unique opportunity for studying fundamental energy loss mechanisms in nano-scale objects. With estimated mass sensitivities on the level of zeptograms (10-21 g) in a one second averaging time, GaN nanowires may be a significant addition to the field of resonant sensors and worthy of future research and device integration.

Why self-catalyzed nanowires are most suitable for large-scale hierarchical integrated designs of nanowire nanoelectronics

NASA Astrophysics Data System (ADS)

Noor Mohammad, S.

2011-10-01

Nanowires are grown by a variety of mechanisms, including vapor-liquid-solid, vapor-quasiliquid-solid or vapor-quasisolid-solid, oxide-assisted growth, and self-catalytic growth (SCG) mechanisms. A critical analysis of the suitability of self-catalyzed nanowires, as compared to other nanowires, for next-generation technology development has been carried out. Basic causes of superiority of self-catalyzed (SCG) nanowires over other nanowires have been described. Polytypism in nanowires has been studied, and a model for polytypism has been proposed. The model predicts polytypism in good agreement with available experiments. This model, together with various evidences, demonstrates lower defects, dislocations, and stacking faults in SCG nanowires, as compared to those in other nanowires. Calculations of carrier mobility due to dislocation scattering, ionized impurity scattering, and acoustic phonon scattering explain the impact of defects, dislocations, and stacking faults on carrier transports in SCG and other nanowires. Analyses of growth mechanisms for nanowire growth directions indicate SCG nanowires to exhibit the most controlled growth directions. In-depth investigation uncovers the fundamental physics underlying the control of growth direction by the SCG mechanism. Self-organization of nanowires in large hierarchical arrays is crucial for ultra large-scale integration (ULSI). Unique features and advantages of self-organized SCG nanowires, unlike other nanowires, for this ULSI have been discussed. Investigations of nanowire dimension indicate self-catalyzed nanowires to have better control of dimension, higher stability, and higher probability, even for thinner structures. Theoretical calculations show that self-catalyzed nanowires, unlike catalyst-mediated nanowires, can have higher growth rate and lower growth temperature. Nanowire and nanotube characteristics have been found also to dictate the performance of nanoelectromechanical systems. Defects, such as

Nanophotonic switch: gold-in-Ga2O3 peapod nanowires.

PubMed

Hsieh, Chin-Hua; Chou, Li-Jen; Lin, Gong-Ru; Bando, Yoshio; Golberg, Dimitri

2008-10-01

A novel metal-insulator heterostructure made of twinned Ga2O3 nanowires embedding discrete gold particles along the twin boundary was formed through a reaction between gold, gallium, and silica at 800 degrees C during simple thermal annealing. The Au-in-Ga2O3 peapods spontaneously crystallized under phase separation induced by the formation of twin boundaries. The nanostructures were analyzed by field emission scanning (FESEM) and transmission electron microscopes (FETEM), and their photoresponse was investigated using a double-frequency Nd:YAG laser with a wavelength of 532 nm on a designed single-nanowire device. The surface plasmon resonance (SPR) effects of embedded Au nanoparticles are proposed to be responsible for the remarkable photoresponse of these novel structures.

Magnetization mechanisms in ordered arrays of polycrystalline Fe100-xCox nanowires

NASA Astrophysics Data System (ADS)

Viqueira, M. S.; Bajales, N.; Urreta, S. E.; Bercoff, P. G.

2015-05-01

Magnetization reversal processes and coercivity mechanisms in polycrystalline Fe100-xCox nanowire arrays, resulting from an AC electrodeposition process, are investigated. The array coercivity is described on the basis of polarization reversal mechanisms operating in individual wires, under the effect of inter-wire dipolar interactions described by a mean field approximation. For individual wires, a reversal mechanism involving the nucleation and further expansion of domain-wall like spin configuration is considered. The wires have a mean grain size larger than both the nanowire diameter and the exchange length, so localized and non-cooperative nucleation modes are considered. As the Co content increases, the alloy saturation polarization gradually decreases, but the coercive field and the relative remanence of the arrays increase, indicating that they are not controlled by the shape anisotropy in all the composition range. The coercive field dependence on the angle between the applied field and the wire long axis is not well described by reversal mechanisms involving nucleation and further displacement of neither vortex nor transverse ideal domain walls. On the contrary, the angular dependence of the coercive field observed at room temperature is well predicted by a model considering nucleation of inverse domains by localized curling, in regions smaller than the grain size, exhibiting quite small aspect ratios as compared to those of the entire nanowire. In arrays with higher Co contents, a transition from an initial (small angle) localized curling nucleation mechanism to another one, involving localized coherent rotation is observed at about π/4.

Miniaturized accelerometer made with ZnO nanowires

NASA Astrophysics Data System (ADS)

Song, Sangho; Kim, Jeong Woong; Kim, Hyun Chan; Yun, Youngmin; Kim, Jaehwan

2017-04-01

Miniaturized accelerometer is required in many applications, such as, robotics, haptic devices, gyroscopes, simulators and mobile devices. ZnO is an essential semiconductor material with wide direct band gap, thermal stability and piezoelectricity. Especially, well aligned ZnO nanowire is appropriate for piezoelectric applications since it can produce high electrical signal under mechanical load. To miniaturize accelerometer, an aligned ZnO nanowire is adopted to implement active piezoelectric layer of the accelerometer and copper is chosen for the head mass. To grow ZnO nanowire on the copper head mass, hydrothermal synthesis is conducted and the effect of ZnO nanowire length on the accelerometer performance is investigated. Refresh hydrothermal synthesis can increase the length of ZnO nanowire. The performance of the fabricated ZnO accelerometers is compared with a commercial accelerometer. Sensitivity and linearity of the fabricated accelerometers are investigated.

On the measurement of relaxation times of acoustic vibrations in metal nanowires.

PubMed

Devkota, Tuphan; Chakraborty, Debadi; Yu, Kuai; Beane, Gary; Sader, John E; Hartland, Gregory V

2018-06-25

The mechanical resonances of metal nanostructures are strongly affected by their environment. In this paper the way the breathing modes of single metal nanowires are damped by liquids with different viscosities was studied by ultrafast pump-probe microscopy experiments. Both nanowires supported on a glass substrate and nanowires suspended over trenches were investigated. The measured quality factors for liquid damping for the suspended nanowires are in good agreement with continuum mechanics calculations for an inviscid fluid that assume continuity in stress and displacement at the nanowire-liquid interface. This shows that liquid damping is controlled by radiation of sound waves into the medium. For the nanowires on the glass surface the quality factors for liquid damping are approximately 60% higher than those for the suspended nanowires. This is attributed to a shadowing effect. The nanowires in our measurements have pentagonal cross-sections. This produces two different breathing modes and also means that one of the faces for the supported nanowires is blocked by the substrate, which reduces the amount of damping from the liquid. Comparing the supported and suspended nanowires also allows us to estimate the effect of the substrate on the acoustic mode damping. We find that the substrate has a weak effect, which is attributed to poor mechanical contact between the nanowires and the substrate.

Coaxial metal-silicide Ni2Si/C54-TiSi2 nanowires.

PubMed

Chen, Chih-Yen; Lin, Yu-Kai; Hsu, Chia-Wei; Wang, Chiu-Yen; Chueh, Yu-Lun; Chen, Lih-Juann; Lo, Shen-Chuan; Chou, Li-Jen

2012-05-09

One-dimensional metal silicide nanowires are excellent candidates for interconnect and contact materials in future integrated circuits devices. Novel core-shell Ni(2)Si/C54-TiSi(2) nanowires, 2 μm in length, were grown controllably via a solid-liquid-solid growth mechanism. Their interesting ferromagnetic behaviors and excellent electrical properties have been studied in detail. The coercivities (Hcs) of the core-shell Ni(2)Si/C54-TiSi(2) nanowires was determined to be 200 and 50 Oe at 4 and 300 K, respectively, and the resistivity was measured to be as low as 31 μΩ-cm. The shift of the hysteresis loop with the temperature in zero field cooled (ZFC) and field cooled (FC) studies was found. ZFC and FC curves converge near room temperature at 314 K. The favorable ferromagnetic and electrical properties indicate that the unique core-shell nanowires can be used in penetrative ferromagnetic devices at room temperature simultaneously as a future interconnection in integrated circuits.

Polymer chain alignment and transistor properties of nanochannel-templated poly(3-hexylthiophene) nanowires

NASA Astrophysics Data System (ADS)

Oh, Seungjun; Hayakawa, Ryoma; Pan, Chengjun; Sugiyasu, Kazunori; Wakayama, Yutaka

2016-08-01

Nanowires of semiconducting poly(3-hexylthiophene) (P3HT) were produced by a nanochannel-template technique. Polymer chain alignment in P3HT nanowires was investigated as a function of nanochannel widths (W) and polymer chain lengths (L). We found that the ratio between chain length and channel width (L/W) was a key parameter as regards promoting polymer chain alignment. Clear dichroism was observed in polarized ultraviolet-visible (UV-Vis) absorption spectra only at a ratio of approximately L/W = 2, indicating that the L/W ratio must be optimized to achieve uniaxial chain alignment in the nanochannel direction. We speculate that an appropriate L/W ratio is effective in confining the geometries and conformations of polymer chains. This discussion was supported by theoretical simulations based on molecular dynamics. That is, the geometry of the polymer chains, including the distance and tilting angles of the chains in relation to the nanochannel surface, was dominant in determining the longitudinal alignment along the nanochannels. Thus prepared highly aligned polymer nanowire is advantageous for electrical carrier transport and has great potential for improving the device performance of field-effect transistors. In fact, a one-order improvement in carrier mobility was observed in a P3HT nanowire transistor.