Soliton solution for the spin current in a ferromagnetic nanowire.

PubMed

Li, Zai-Dong; Li, Qiu-Yan; Li, Lu; Liu, W M

2007-08-01

We investigate the interaction of a periodic solution and a one-soliton solution for the spin-polarized current in a uniaxial ferromagnetic nanowire. The amplitude and wave number of the periodic solution for the spin current give different contributions to the width, velocity, and amplitude of the soliton. Moreover, we found that the soliton can be trapped only in space with proper conditions. Finally, we analyze the modulation instability and discuss dark solitary wave propagation for a spin current on the background of a periodic solution. In some special cases, the solution can be expressed as the linear combination of the periodic and soliton solutions.

Dynamics of vortex domain walls in ferromagnetic nanowires - A possible method for chirality manipulation

NASA Astrophysics Data System (ADS)

Li, Y.; Lu, Z.; Chen, C.; Cheng, M.; Yin, H.; Wang, W.; Li, C.; Liu, Y.; Xiong, R.; Shi, J.

2018-06-01

The dynamic behaviors of vortex domain walls (VDWs) in ferromagnetic nanowires driven by a magnetic field above Walker breakdown field (Hw) were investigated using micromagnetic simulation. It was found when nanowire has proper geometrical dimensions, the VDW may oscillate in a chirality invariant mode or a chirality switching mode depending on applied field and damping constant. At fixed damping constant, the oscillation mode can be controlled by applied field - with the increase of applied field, the oscillation of VDW change from a chirality invariant mode to a variant one. As the oscillation of VDW changes from chirality invariant regime to chirality switching regime, the oscillation frequency and amplification will undergo an abnormal change, which may offer a fingerprint for the switch of oscillation mode. Our finding proposes a simple way to control the chirality of a VDW by properly manipulating nanowire geometry and applied field, which may have important applications in VDW-based devices.

Room-temperature ferromagnetic Cr-doped Ge/GeOx core-shell nanowires.

PubMed

Katkar, Amar S; Gupta, Shobhnath P; Seikh, Md Motin; Chen, Lih-Juann; Walke, Pravin S

2018-06-08

The Cr-doped tunable thickness core-shell Ge/GeO x nanowires (NWs) were synthesized and characterized using x-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy and magnetization studies. The shell thickness increases with the increase in synthesis temperature. The presence of metallic Cr and Cr 3+ in core-shell structure was confirmed from XPS study. The magnetic property is highly sensitive to the core-shell thickness and intriguing room temperature ferromagnetism is realized only in core-shell NWs. The magnetization decreases with an increase in shell thickness and practically ceases to exist when there is no core. These NWs show remarkably high Curie temperature (T C  > 300 K) with the dominating values of its magnetic remanence (M R ) and coercivity (H C ) compared to germanium dilute magnetic semiconductor nanomaterials. We believe that our finding on these Cr-doped Ge/GeO X core-shell NWs has the potential to be used as a hard magnet for future spintronic devices, owing to their higher characteristic values of ferromagnetic ordering.

Room-temperature ferromagnetic Cr-doped Ge/GeOx core–shell nanowires

NASA Astrophysics Data System (ADS)

Katkar, Amar S.; Gupta, Shobhnath P.; Motin Seikh, Md; Chen, Lih-Juann; Walke, Pravin S.

2018-06-01

The Cr-doped tunable thickness core–shell Ge/GeOx nanowires (NWs) were synthesized and characterized using x-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy and magnetization studies. The shell thickness increases with the increase in synthesis temperature. The presence of metallic Cr and Cr3+ in core–shell structure was confirmed from XPS study. The magnetic property is highly sensitive to the core–shell thickness and intriguing room temperature ferromagnetism is realized only in core–shell NWs. The magnetization decreases with an increase in shell thickness and practically ceases to exist when there is no core. These NWs show remarkably high Curie temperature (TC > 300 K) with the dominating values of its magnetic remanence (MR) and coercivity (HC) compared to germanium dilute magnetic semiconductor nanomaterials. We believe that our finding on these Cr-doped Ge/GeOX core–shell NWs has the potential to be used as a hard magnet for future spintronic devices, owing to their higher characteristic values of ferromagnetic ordering.

Effect of size distribution on magnetic properties in cobalt nanowires

NASA Astrophysics Data System (ADS)

Xu, Huanhuan; Wu, Qiong; Yue, Ming; Li, Chenglin; Li, Hongjian; Palaka, Subhashini

2018-05-01

Cobalt nanowires were synthesized by reduction of carboxylate salts of Co in 1, 2-butanediol using a solvothermal chemical process. These nanowires crystallize with the hcp structure and the growth axis is parallel to the crystallographic c-axis. The morphology of the nanowires that prepared with mechanical stirring during earlier stage of the reaction process exhibits a smaller averaged aspect ratio but narrow size distribution. The assembly of the nanowires that prepared with mechanical stirring shows almost same coercivity and remanent magnetization but 59% increase of magnetic energy product. This remarkable improvement of energy product has been further understood by micromagnetic simulations. The magnetic performance at variant temperatures of Co nanowires has also been presented. These ferromagnetic nanowires could be new ideal building blocks for permanent magnets with high performance and high thermal stability.

Fibroblasts Cultured on Nanowires Exhibit Low Motility, Impaired Cell Division, and DNA Damage

PubMed Central

Persson, Henrik; Købler, Carsten; Mølhave, Kristian; Samuelson, Lars; Tegenfeldt, Jonas O; Oredsson, Stina; Prinz, Christelle N

2013-01-01

Nanowires are commonly used as tools for interfacing living cells, acting as biomolecule-delivery vectors or electrodes. It is generally assumed that the small size of the nanowires ensures a minimal cellular perturbation, yet the effects of nanowires on cell migration and proliferation remain largely unknown. Fibroblast behaviour on vertical nanowire arrays is investigated, and it is shown that cell motility and proliferation rate are reduced on nanowires. Fibroblasts cultured on long nanowires exhibit failed cell division, DNA damage, increased ROS content and respiration. Using focused ion beam milling and scanning electron microscopy, highly curved but intact nuclear membranes are observed, showing no direct contact between the nanowires and the DNA. The nanowires possibly induce cellular stress and high respiration rates, which trigger the formation of ROS, which in turn results in DNA damage. These results are important guidelines to the design and interpretation of experiments involving nanowire-based transfection and electrical characterization of living cells. PMID:23813871

Self-organized ferromagnetic nanowires in MgO-based magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Seike, Masayoshi; Fukushima, Tetsuya; Sato, Kazunori; Katayama-Yoshida, Hiroshi

2013-08-01

The focus of this study is to examine the distribution of defects and defect-induced properties in MgO-based magnetic tunnel junctions (MTJs). To this end, first-principles calculations were performed to estimate the electronic structures and total energies of MgO with various defects by using the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional. From connections drawn between the calculated results and previously reported experimental data, we propose that self-organized ferromagnetic nanowires of magnesium vacancies can be formed in MgO-based MTJs. This self-organization may provide the foundation for a comprehensive understanding of the conductivity, tunnel barriers and quantum oscillations of MgO-based MTJs. Further experimental verification is needed before firm conclusions can be drawn.

Spark-plasma-sintering magnetic field assisted compaction of Co{sub 80}Ni{sub 20} nanowires for anisotropic ferromagnetic bulk materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ouar, Nassima; Schoenstein, Frédéric; Mercone, Silvana

We developed a two-step process showing the way for sintering anisotropic nanostructured bulk ferromagnetic materials. A new reactor has been optimized allowing the synthesis of several grams per batch of nanopowders via a polyol soft chemistry route. The feasibility of the scale-up has been successfully demonstrated for Co{sub 80}Ni{sub 20} nanowires and a massic yield of ∼97% was obtained. The thus obtained nanowires show an average diameter of ∼6 nm and a length of ∼270 nm. A new bottom-up strategy allowed us to compact the powder into a bulk nanostructured system. We used a spark-plasma-sintering technique under uniaxial compression andmore » low temperature assisted by a permanent magnetic field of 1 T. A macroscopic pellet of partially aligned nanowire arrays has been easily obtained. This showed optimized coercive properties along the direction of the magnetic field applied during compaction (i.e., the nanowires' direction)« less

Magnetoresistance engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates

NASA Astrophysics Data System (ADS)

Fábián, G.; Makk, P.; Madsen, M. H.; Nygârd, J.; Schönenberger, C.; Baumgartner, A.

2016-11-01

We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime using the FSGs and a backgate. In both regimes we find a strong MR and a sharp MR switching of up to 25% at the field at which the magnetizations of the FSGs are inverted by the external field. The sign and amplitude of the MR and the MR switching can both be tuned electrically by the FSGs. In a double dot regime close to pinch-off we find two sharp transitions in the conductance, reminiscent of tunneling MR (TMR) between two ferromagnetic contacts, with one transition near zero and one at the FSG switching fields. These surprisingly rich characteristics we explain in several simple resonant tunneling models. For example, the TMR-like MR can be understood as a stray-field controlled transitions between singlet and triplet double dot states. Such local magnetic fields are the key elements in various proposals to engineer novel states of matter and may be used for testing electron spin based Bell inequalities.

Observations of the Kondo effect and its coexistence with ferromagnetism in a magnetically undoped metal oxide nanostructure

NASA Astrophysics Data System (ADS)

Sapkota, Keshab R.; Maloney, F. Scott; Wang, Wenyong

2018-04-01

In this work, we report unusual observations of Kondo effect and coexistence of Kondo effect and ferromagnetism in indium tin oxide (ITO) nanowires that were synthesized without incorporating any magnetic impurities. The temperature-dependent resistivity (ρ -T ) data exhibited an upturn below 80 K and then tended to saturate below 10 K. The ρ -T and magnetoresistance data were analyzed using the n -channel Kondo model, and from the obtained values of S =1 and n ˜1 , the nanowires were expected to be an underscreened Kondo system. A model was also proposed to explain the formation of localized S =1 spin centers in the ITO nanowires. This work could provide insights into the understanding of spin-related novel phenomena in metal oxide nanostructures.

Ferromagnetic nanowires: Field-induced self-assembly, magnetotransport and biological applications

NASA Astrophysics Data System (ADS)

Tanase, Monica

In this dissertation, a series of experiments on magnetic nanowires are described. Magnetic nanowires suspended in fluid solutions can be assembled and ordered by taking advantage of their large shape anisotropy. Magnetic manipulation and assembly techniques were developed, using electrodeposited Ni nanowires. Preorienting nanowires in a small magnetic field induced their self-assembly in continuous chains. A new technique of magnetic trapping allowed capture of single nanowires from fluid suspension on lithographically fabricated micromagnets. As described herein, the presence of an external magnetic field plays a fundamental role in all fluid assembly methods used. The dynamics of both chaining and trapping processes is described quantitatively in terms of the interplay of magnetic forces and fluid drag at low Reynolds number. Lithographic methods for addressing single nanowires for transport characterization were developed. Magnetotransport measurements were performed on individual straight and bent PtNiPt nanowires. The Pt end segments provided an oxide-free interface to the magnetic central segment. In straight nanowires, domain reversal was observed to occur via curling mode initiated in a small nucleation volume. Magnetotransport in bent nanowires allowed the investigation of a domain wall trapped at the bend. Magnetic trapping of nanowires on pre-fabricated electrodes was adapted as a successful alternative contacting technique to lithography. The self-assembly and manipulation techniques were adapted for manipulation of cells as nanowires were found to bind to cells through nonspecific adhesion mechanisms. Ni nanowires were found to outperform superparamagnetic beads in magnetic cell separations. Additionally, the large remnant magnetization of the nanowires allowed for low-field manipulation techniques. Self-assembled chains of cells were formed and single cells were localized on substrates patterned with micromagnets. A fluid flow method was developed to

Coaxial metal-silicide Ni2Si/C54-TiSi2 nanowires.

PubMed

Chen, Chih-Yen; Lin, Yu-Kai; Hsu, Chia-Wei; Wang, Chiu-Yen; Chueh, Yu-Lun; Chen, Lih-Juann; Lo, Shen-Chuan; Chou, Li-Jen

2012-05-09

One-dimensional metal silicide nanowires are excellent candidates for interconnect and contact materials in future integrated circuits devices. Novel core-shell Ni(2)Si/C54-TiSi(2) nanowires, 2 μm in length, were grown controllably via a solid-liquid-solid growth mechanism. Their interesting ferromagnetic behaviors and excellent electrical properties have been studied in detail. The coercivities (Hcs) of the core-shell Ni(2)Si/C54-TiSi(2) nanowires was determined to be 200 and 50 Oe at 4 and 300 K, respectively, and the resistivity was measured to be as low as 31 μΩ-cm. The shift of the hysteresis loop with the temperature in zero field cooled (ZFC) and field cooled (FC) studies was found. ZFC and FC curves converge near room temperature at 314 K. The favorable ferromagnetic and electrical properties indicate that the unique core-shell nanowires can be used in penetrative ferromagnetic devices at room temperature simultaneously as a future interconnection in integrated circuits.

Fabrication of ZnCoO nanowires and characterization of their magnetic properties

PubMed Central

2014-01-01

Hydrogen-treated ZnCoO shows magnetic behavior, which is related to the formation of Co-H-Co complexes. However, it is not well known how the complexes are connected to each other and with what directional behavior they are ordered. In this point of view, ZnCoO nanowire is an ideal system for the study of the magnetic anisotropy. ZnCoO nanowire was fabricated by trioctylamine solution method under different ambient gases. We found that the oxidation of trioctylamine plays an essential role on the synthesis of high-quality ZnCoO nanowires. The hydrogen injection to ZnCoO nanowires induced ferromagnetism with larger magnetization than ZnCoO powders, while becoming paramagnetic after vacuum heat treatment. Strong ferromagnetism of nanowires can be explained by the percolation of Co-H-Co complexes along the c-axis. PMID:24910575

Prevalence of information stored in arrays of magnetic nanowires against external fields

NASA Astrophysics Data System (ADS)

Ceballos, D.; Cisternas, E.; Vogel, E. E.; Allende, S.

2018-04-01

Arrays of magnetic nanowires in porous alumina can be used to store information inscribed on the system by orienting the magnetization of selected wires pointing in a desired direction, so symbols can be read as ferromagnetic sectors. However, this information is subject to aging and the stored information could be gradually lost. We investigate here two mechanisms proposed to improve the prevalence of the stored information: opposite ferromagnetic band at the center of the symbol and bi-segmented nanowires acting as two layers of nanowires storing the same information. Both mechanisms prove to increase resistance to the action of external magnetic fields for the case of Ni wires in a geometry compatible with actually grown nanowires. Advantages and disadvantages of these mechanisms are discussed.

Magnetic hysteresis in small-grained CoxPd1-x nanowire arrays

NASA Astrophysics Data System (ADS)

Viqueira, M. S.; Pozo-López, G.; Urreta, S. E.; Condó, A. M.; Cornejo, D. R.; Fabietti, L. M.

2015-11-01

Co-Pd nanowires with small grain size are fabricated by AC electrodeposition into hexagonally ordered alumina pores, 20-35 nm in diameter and about 1 μm long. The effects of the alloy composition, the nanowire diameter and the grain size on the hysteresis properties are considered. X-ray diffraction indicates that the nanowires are single phase, a fcc Co-Pd solid solution; electron microscopy results show that they are polycrystalline, with randomly oriented grains (7-12 nm), smaller than the wire diameter. Nanowire arrays are ferromagnetic, with an easy magnetization axis parallel to the nanowire long axis. Both, the coercive field and the loop squareness monotonously increase with the Co content and with the grain size, but no clear correlation with the wire diameter is found. The Co and Co-rich nanowire arrays exhibit coercive fields and reduced remanence values quite insensitive to temperature in the range 4 K-300 K; on the contrary, in Pd-rich nanowires both magnitudes are smaller and they largely increase during cooling below 100 K. These behaviors are systematized by considering the strong dependences displayed by the magneto-crystalline anisotropy and the saturation magnetostriction on composition and temperature. At low temperatures the effective anisotropy value and the domain-wall width to grain size ratio drastically change, promoting less cooperative and harder nucleation modes.

Dynamics of magnetization in ferromagnet with spin-transfer torque

NASA Astrophysics Data System (ADS)

Li, Zai-Dong; He, Peng-Bin; Liu, Wu-Ming

2014-11-01

We review our recent works on dynamics of magnetization in ferromagnet with spin-transfer torque. Driven by constant spin-polarized current, the spin-transfer torque counteracts both the precession driven by the effective field and the Gilbert damping term different from the common understanding. When the spin current exceeds the critical value, the conjunctive action of Gilbert damping and spin-transfer torque leads naturally the novel screw-pitch effect characterized by the temporal oscillation of domain wall velocity and width. Driven by space- and time-dependent spin-polarized current and magnetic field, we expatiate the formation of domain wall velocity in ferromagnetic nanowire. We discuss the properties of dynamic magnetic soliton in uniaxial anisotropic ferromagnetic nanowire driven by spin-transfer torque, and analyze the modulation instability and dark soliton on the spin wave background, which shows the characteristic breather behavior of the soliton as it propagates along the ferromagnetic nanowire. With stronger breather character, we get the novel magnetic rogue wave and clarify its formation mechanism. The generation of magnetic rogue wave mainly arises from the accumulation of energy and magnons toward to its central part. We also observe that the spin-polarized current can control the exchange rate of magnons between the envelope soliton and the background, and the critical current condition is obtained analytically. At last, we have theoretically investigated the current-excited and frequency-adjusted ferromagnetic resonance in magnetic trilayers. A particular case of the perpendicular analyzer reveals that the ferromagnetic resonance curves, including the resonant location and the resonant linewidth, can be adjusted by changing the pinned magnetization direction and the direct current. Under the control of the current and external magnetic field, several magnetic states, such as quasi-parallel and quasi-antiparallel stable states, out

Mobile atom traps using magnetic nanowires

NASA Astrophysics Data System (ADS)

Allwood, D. A.; Schrefl, T.; Hrkac, G.; Hughes, I. G.; Adams, C. S.

2006-07-01

By solving the Landau-Lifshitz-Gilbert equation using a finite element method we show that an atom trap can be produced above a ferromagnetic nanowire domain wall. Atoms experience trap frequencies of up to a few megahertz, and can be transported by applying a weak magnetic field along the wire. Lithographically defined nanowire patterns could allow quantum information processing by bringing domain walls in close proximity at certain places to allow trapped atom interactions and far apart at others to allow individual addressing.

Geometrical dependence of spin current absorption into a ferromagnetic nanodot

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nomura, Tatsuya; Ohnishi, Kohei; Kimura, Takashi, E-mail: t-kimu@phys.kyushu-u.ac.jp

We have investigated the absorption property of the diffusive pure spin current due to a ferromagnetic nanodot in a laterally configured ferromagnetic/nonmagnetic hybrid nanostructure. The spin absorption in a nano-pillar-based lateral-spin-valve structure was confirmed to increase with increasing the lateral dimension of the ferromagnetic dot. However, the absorption efficiency was smaller than that in a conventional lateral spin valve based on nanowire junctions because the large effective cross section of the two dimensional nonmagnetic film reduces the spin absorption selectivity. We also found that the absorption efficiency of the spin current is significantly enhanced by using a thick ferromagnetic nanodot.more » This can be understood by taking into account the spin absorption through the side surface of the ferromagnetic dot quantitatively.« less

Single crystalline Ge(1-x)Mn(x) nanowires as building blocks for nanoelectronics.

PubMed

van der Meulen, Machteld I; Petkov, Nikolay; Morris, Michael A; Kazakova, Olga; Han, Xinhai; Wang, Kang L; Jacob, Ajey P; Holmes, Justin D

2009-01-01

Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5-1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm(2)/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.

Ab initio design of nanostructures for solar energy conversion: a case study on silicon nitride nanowire.

PubMed

Pan, Hui

2014-01-01

Design of novel materials for efficient solar energy conversion is critical to the development of green energy technology. In this work, we present a first-principles study on the design of nanostructures for solar energy harvesting on the basis of the density functional theory. We show that the indirect band structure of bulk silicon nitride is transferred to direct bandgap in nanowire. We find that intermediate bands can be created by doping, leading to enhancement of sunlight absorption. We further show that codoping not only reduces the bandgap and introduces intermediate bands but also enhances the solubility of dopants in silicon nitride nanowires due to reduced formation energy of substitution. Importantly, the codoped nanowire is ferromagnetic, leading to the improvement of carrier mobility. The silicon nitride nanowires with direct bandgap, intermediate bands, and ferromagnetism may be applicable to solar energy harvesting.

Conductance spectra of asymmetric ferromagnet/ferromagnet/ferromagnet junctions

NASA Astrophysics Data System (ADS)

Pasanai, K.

2017-01-01

A theory of tunneling spectroscopy of ferromagnet/ferromagnet/ferromagnet junctions was studied. We applied a delta-functional approximation for the interface scattering properties under a one-dimensional system of a free electron approach. The reflection and transmission probabilities were calculated in the ballistic regime, and the conductance spectra were then calculated using the Landauer formulation. The magnetization directions were set to be either parallel (P) or anti-parallel (AP) alignments, for comparison. We found that the conductance spectra was suppressed when increasing the interfacial scattering at the interfaces. Moreover, the electron could exhibit direct transmission when the thickness was rather thin. Thus, there was no oscillation in this case. However, in the case of a thick layer the conductance spectra oscillated, and this oscillation was most prominent when the middle layer thickness increased. In the case of direct transmission, the conductance spectra of P and AP systems were definitely suppressed with increased exchange energy of the middle ferromagnet. This also refers to an increase in the magnetoresistance of the junction. In the case of oscillatory behavior, the positions of the resonance peaks were changed as the exchange energy was changed.

Single conducting polymer nanowire based conductometric sensors

NASA Astrophysics Data System (ADS)

Bangar, Mangesh Ashok

The detection of toxic chemicals, gases or biological agents at very low concentrations with high sensitivity and selectivity has been subject of immense interest. Sensors employing electrical signal readout as transduction mechanism offer easy, label-free detection of target analyte in real-time. Traditional thin film sensors inherently suffered through loss of sensitivity due to current shunting across the charge depleted/added region upon analyte binding to the sensor surface, due to their large cross sectional area. This limitation was overcome by use of nanostructure such as nanowire/tube as transducer where current shunting during sensing was almost eliminated. Due to their benign chemical/electrochemical fabrication route along with excellent electrical properties and biocompatibility, conducting polymers offer cost-effective alternative over other nanostructures. Biggest obstacle in using these nanostructures is lack of easy, scalable and cost-effective way of assembling these nanostructures on prefabricated micropatterns for device fabrication. In this dissertation, three different approaches have been taken to fabricate individual or array of single conducting polymer (and metal) nanowire based devices and using polymer by itself or after functionalization with appropriate recognition molecule they have been applied for gas and biochemical detection. In the first approach electrochemical fabrication of multisegmented nanowires with middle functional Ppy segment along with ferromagnetic nickel (Ni) and end gold segments for better electrical contact was studied. This multi-layered nanowires were used along with ferromagnetic contact electrode for controlled magnetic assembly of nanowires into devices and were used for ammonia gas sensing. The second approach uses conducting polymer, polypyrrole (Ppy) nanowires using simple electrophoretic alignment and maskless electrodeposition to anchor nanowire which were further functionalized with antibodies against

Superconductivity of a Sn film controlled by an array of Co nanowires

NASA Astrophysics Data System (ADS)

Wei, Zhiyuan; Ye, Zuxin; Rathnayaka, Daya; Lyuksyutov, Igor; Wu, Wenhao; Naugle, Donald

2012-02-01

Superconducting properties of a hybrid structure composed of ferromagnetic Co nanowire arrays and a superconducting Sn film have been investigated. Ordered Co nanowires arrays with 60 nm, 150 nm and 200 nm diameter were electroplated into the pores of self organized anodic aluminum oxide (AAO) membranes. Hysteretic dependence of the Sn film superconducting properties on applied magnetic field and critical current enhancement at moderate fields has been observed. This behavior strongly depends on the ratio of the Sn film thickness to the Co nanowire diameter.

Superconductivity of a Sn film controlled by an array of Co nanowires

NASA Astrophysics Data System (ADS)

Wei, Z.; Ye, Z.; Rathnayaka, K. D. D.; Lyuksyutov, I. F.; Wu, W.; Naugle, D. G.

2012-09-01

Superconducting properties of a hybrid structure composed of ferromagnetic Co nanowire arrays and a superconducting Sn film have been investigated. Ordered Co nanowires arrays with 60 nm, 150 nm and 200 nm diameter were electroplated into the pores of self organized Anodic Aluminum Oxide (AAO) membranes. Hysteretic dependence of the Sn film superconducting properties on applied magnetic field and critical current enhancement at moderate fields has been observed. This behavior strongly depends on the ratio of the Sn film thickness to the Co nanowire diameter.

Quantum statistics for a two-mode magnon system with microwave pumping: application to coupled ferromagnetic nanowires.

PubMed

Haghshenasfard, Zahra; Cottam, M G

2017-05-17

A microscopic (Hamiltonian-based) method for the quantum statistics of bosonic excitations in a two-mode magnon system is developed. Both the exchange and the dipole-dipole interactions, as well as the Zeeman term for an external applied field, are included in the spin Hamiltonian, and the model also contains the nonlinear effects due to parallel pumping and four-magnon interactions. The quantization of spin operators is achieved through the Holstein-Primakoff formalism, and then a coherent magnon state representation is used to study the occupation magnon number and the quantum statistical behaviour of the system. Particular attention is given to the cross correlation between the two coupled magnon modes in a ferromagnetic nanowire geometry formed by two lines of spins. Manipulation of the collapse-and-revival phenomena for the temporal evolution of the magnon number as well as the control of the cross correlation between the two magnon modes is demonstrated by tuning the parallel pumping field amplitude. The role of the four-magnon interactions is particularly interesting and leads to anti-correlation in some cases with coherent states.

Superconducting magnetoresistance in ferromagnet/superconductor/ferromagnet trilayers

PubMed Central

Stamopoulos, D.; Aristomenopoulou, E.

2015-01-01

Magnetoresistance is a multifaceted effect reflecting the diverse transport mechanisms exhibited by different kinds of plain materials and hybrid nanostructures; among other, giant, colossal, and extraordinary magnetoresistance versions exist, with the notation indicative of the intensity. Here we report on the superconducting magnetoresistance observed in ferromagnet/superconductor/ferromagnet trilayers, namely Co/Nb/Co trilayers, subjected to a parallel external magnetic field equal to the coercive field. By manipulating the transverse stray dipolar fields that originate from the out-of-plane magnetic domains of the outer layers that develop at coercivity, we can suppress the supercurrent of the interlayer. We experimentally demonstrate a scaling of the magnetoresistance magnitude that we reproduce with a closed-form phenomenological formula that incorporates relevant macroscopic parameters and microscopic length scales of the superconducting and ferromagnetic structural units. The generic approach introduced here can be used to design novel cryogenic devices that completely switch the supercurrent ‘on’ and ‘off’, thus exhibiting the ultimate magnetoresistance magnitude 100% on a regular basis. PMID:26306543

Assembling non-ferromagnetic materials to ferromagnetic architectures using metal-semiconductor interfaces

PubMed Central

Ma, Ji; Liu, Chunting; Chen, Kezheng

2016-01-01

In this work, a facile and versatile solution route was used to fabricate room-temperature ferromagnetic fish bone-like, pteridophyte-like, poplar flower-like, cotton-like Cu@Cu2O architectures and golfball-like Cu@ZnO architecture. The ferromagnetic origins in these architectures were found to be around metal-semiconductor interfaces and defects, and the root cause for their ferromagnetism lay in charge transfer processes from metal Cu to semiconductors Cu2O and ZnO. Owing to different metallization at their interfaces, these architectures exhibited different ferromagnetic behaviors, including coercivity, saturation magnetization as well as magnetic interactions. PMID:27680286

Directed Assembly of Cells with Magnetic Nanowires

NASA Astrophysics Data System (ADS)

Tanase, M.; Hultgren, A.; Chen, C. S.; Reich, D. H.

2003-03-01

We demonstrate the use of magnetic nanowires for assembly and manipulation of mammalian cells. Currently, superparamagnetic beads are used for manipulations of cells, but large field strengths and gradients are required for these to be effective. Unlike the beads, the large remnant magnetization of the nanowires offers the prospect of a variety of low-field manipulation techniques. Ferromagnetic nanowires suspended in fluids can be easily manipulated and assembled using small magnetic field [1]. The wires can be bound to cells, and the dipolar interaction between the nanowires can be used to create self-assembled cell chains. Microfabricated arrays of Py magnets were used to trap single cells or chains of cells bound to Ni nanowires. Possible applications of these techniques include controlled initiation of cell cultures, as well as isolation of individual cells. This work was supported by DARPA/AFOSR Grant No. F49620-02-1-0307 and by the David and Lucile Packard Foundation Grant No. 2001-17715. [1] M. Tanase et.al., Nanoletters 1, 155 (2001), J. Appl. Phys. 91, 8549 (2002).

Controlled propulsion and cargo transport of rotating nickel nanowires near a patterned solid surface.

PubMed

Zhang, Li; Petit, Tristan; Lu, Yang; Kratochvil, Bradley E; Peyer, Kathrin E; Pei, Ryan; Lou, Jun; Nelson, Bradley J

2010-10-26

We show that rotating Ni nanowires are capable of propulsion and transport of colloidal cargo near a complex surface. When dissimilar boundary conditions exist at the two ends of a nanowire, such as when a nanowire is near a wall, tumbling motion can be generated that leads to propulsion of the nanowire. The motion of the nanowire can be precisely controlled using a uniform rotating magnetic field. We investigate the propulsion mechanism and the trajectory of the nanowire during the tumbling motion and demonstrate cargo transport of a polystyrene microbead by the nanowire over a flat surface or across an open microchannel. The results imply that functionalized, ferromagnetic one-dimensional, tumbling nanostructures can be used for cell manipulation and targeted drug delivery in a low Reynolds number aqueous environment.

Artificially modified magnetic anisotropy in interconnected nanowire networks.

PubMed

Araujo, Elsie; Encinas, Armando; Velázquez-Galván, Yenni; Martínez-Huerta, Juan Manuel; Hamoir, Gaël; Ferain, Etienne; Piraux, Luc

2015-01-28

Interconnected or crossed magnetic nanowire networks have been fabricated by electrodeposition into a polycarbonate template with crossed cylindrical nanopores oriented ±30° with respect to the surface normal. Tailor-made nanoporous polymer membranes have been designed by performing a double energetic heavy ion irradiation with fixed incidence angles. The Ni and Ni/NiFe nanowire networks have been characterized by magnetometry as well as ferromagnetic resonance and compared with parallel nanowire arrays of the same diameter and density. The most interesting feature of these nanostructured materials is a significant reduction of the magnetic anisotropy when the external field is applied perpendicular and parallel to the plane of the sample. This effect is attributed to the relative orientation of the nanowire axes with the applied field. Moreover, the microwave transmission spectra of these nanowire networks display an asymmetric linewidth broadening, which may be interesting for the development of low-pass filters. Nanoporous templates made of well-defined nanochannel network constitute an interesting approach to fabricate materials with controlled anisotropy and microwave absorption properties that can be easily modified by adjusting the relative orientation of the nanochannels, pore sizes and material composition along the length of the nanowire.

Aspect-ratio dependence of magnetization reversal in cylindrical ferromagnetic nanowires

NASA Astrophysics Data System (ADS)

Sultan, Musaab S.; Atkinson, Del

2016-05-01

The magnetization reversal behavior in isolated cylindrical and square cross-section Ni81Fe19 nanowires was systematically studied as a function of nanowire cross-section dimensions from 10 up to 200 nm using micromagnetic simulations. This approach provides access to the switching field, remanence ratio and most significantly the magnetization structures during reversal, which allows the evolution of magnetization processes to be studied with scaling of the cross-sectional dimensions. The dimensional trends in reversal behavior for both square and circular cross-section were comparable throughout the range of dimensions studied. The thinnest nanowires showed simple square switching and 100% remanence. With increasing diameter the switching field reduces and above 40 nm the reversal behavior shows an increasing rotational component prior to sharp switching of the magnetization. The magnitude of the reversible component increases with increasing dimensions up to 150 nm, above which the magnetization reversal process is more complicated and the hysteresis loops are no longer bistable. The micromagnetic structures evolve from simple uniform parallel single domain states in the thinnest wires through the formation of vortex-like end states in thicker wires to complex multidomain structures during the reversal of the thickest wires. In the later cases the reversal is not simple curling-like behavior, although the angular switching field dependence was comparable with curling.

Multicracking and Magnetic Behavior of Ni80Fe20 Nanowires Deposited onto a Polymer Substrate.

PubMed

Merabtine, Skander; Zighem, Fatih; Faurie, Damien; Garcia-Sanchez, Alexis; Lupo, Pierpaolo; Adeyeye, Adekunle O

2018-05-09

This work presents the effect of large strains (up to 20%) on the behavior of magnetic nanowires (Ni 80 Fe 20 ) deposited on a Kapton substrate. The multicracking phenomenon was followed by in situ tensile tests combined with atomic force microscopy measurements. These measurements show, on the one hand, a delay in crack initiation relative to the nonpatterned thin film and, on the other hand, a saturation of the length of the nanowire fragments. The latter makes it possible to retain the initial magnetic anisotropy measured after deformation by ferromagnetic resonance. In addition, the ferromagnetic resonance line profile (intensity, width) is minimally affected by the numerous cracks, which is explained by the small variation in magnetic anistropy and the low magnetostriction coefficient of Ni 80 Fe 20 .

Dimensionality Effects in FeGe 2 Nanowires: Enhanced Anisotropic Magnetization and Anomalous Electrical Transport

DOE PAGES

Mandrus, D.; Gai, Zheng; Ward, Thomas Zac; ...

2017-08-02

Here, we report the synthesis of single-crystal iron germanium nanowires via chemical vapor deposition without the assistance of any catalysts. The assembly of single-crystal FeGe 2 nanowires with tetragonal C16 crystal structure shows anisotropic magnetic behavior along the radial direction or the growth axial direction, with both antiferromagnetic and ferromagnetic orders. Single FeGe 2 nanowire devices were fabricated using e-beam lithography. Electronic transport measurement in these devices show two resistivity anomalies near 250 K and 200 K which are likely signatures of the two spin density wave states in FeGe 2.

Dimensionality Effects in FeGe 2 Nanowires: Enhanced Anisotropic Magnetization and Anomalous Electrical Transport

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mandrus, D.; Gai, Zheng; Ward, Thomas Zac

Here, we report the synthesis of single-crystal iron germanium nanowires via chemical vapor deposition without the assistance of any catalysts. The assembly of single-crystal FeGe 2 nanowires with tetragonal C16 crystal structure shows anisotropic magnetic behavior along the radial direction or the growth axial direction, with both antiferromagnetic and ferromagnetic orders. Single FeGe 2 nanowire devices were fabricated using e-beam lithography. Electronic transport measurement in these devices show two resistivity anomalies near 250 K and 200 K which are likely signatures of the two spin density wave states in FeGe 2.

Isolation of a new two-dimensional honeycomb carbonato-bridged copper(II) complex exhibiting long-range ferromagnetic ordering.

PubMed

Majumder, Arpi; Choudhury, Chirantan Roy; Mitra, Samiran; Rosair, Georgina M; El Fallah, M Salah; Ribas, Joan

2005-04-28

Atmospheric CO2 fixation by an aqueous solution containing Cu(ClO4)2.6H2O and 4-aminopyridine (4-apy) yields a novel example of a two-dimensional mu3-CO3 bridged copper(II) complex {[Cu(4-apy)2]3(mu3-CO3)2(ClO4)2.(1/2)CH3OH}n that has been characterized by IR, UV and X-ray crystallography; preliminary magnetic measurements show that complex exhibits long-range ordered ferromagnetic coupling.

Role of interbranch pumping on the quantum-statistical behavior of multi-mode magnons in ferromagnetic nanowires

NASA Astrophysics Data System (ADS)

Haghshenasfard, Zahra; Cottam, M. G.

2018-01-01

Theoretical studies are reported for the quantum-statistical properties of microwave-driven multi-mode magnon systems as represented by ferromagnetic nanowires with a stripe geometry. Effects of both the exchange and the dipole-dipole interactions, as well as a Zeeman term for an external applied field, are included in the magnetic Hamiltonian. The model also contains the time-dependent nonlinear effects due to parallel pumping with an electromagnetic field. Using a coherent magnon state representation in terms of creation and annihilation operators, we investigate the effects of parallel pumping on the temporal evolution of various nonclassical properties of the system. A focus is on the interbranch mixing produced by the pumping field when there are three or more modes. In particular, the occupation magnon number and the multi-mode cross correlations between magnon modes are studied. Manipulation of the collapse and revival phenomena of the average magnon occupation number and the control of the cross correlation between the magnon modes are demonstrated through tuning of the parallel pumping field amplitude and appropriate choices for the coherent magnon states. The cross correlations are a direct consequence of the interbranch pumping effects and do not appear in the corresponding one- or two-mode magnon systems.

Vacancy-induced spin-glass behavior of Prussian blue analogue Fe II1.1Cr IIx[Cr III (CN) 6] 0.6- x· nH 2O nanowires

NASA Astrophysics Data System (ADS)

Gao, Bo; Yao, Jinli; Xue, Desheng

2010-09-01

Prussian blue analogue Fe II1.1Cr IIx[Cr III(CN) 6] 0.6- x· nH 2O nanowires were synthesized by electrodeposition. The magnetic properties investigation indicates that the nanowires exhibit cluster spin-glass behavior, which undergoes a magnetic transition to a frozen state below about 62 K. Spin disorder arising from reduced coordination and broken exchange bonds between spin centers due to the structural defects may be the reason that causes the spin-glass freezing behavior. The negative magnetization observed at temperature lower than the compensation temperature ( Tcomp˜43 K) at a field of 10 Oe may be due to the different temperature dependences of the ferromagnetic site Fe-Cr and antiferromagnetic site Cr-Cr.

Spin-selective coupling to Majorana zero modes in mixed singlet and triplet superconducting nanowires

NASA Astrophysics Data System (ADS)

Paul, Ganesh C.; Saha, Arijit; Das, Sourin

2018-05-01

We theoretically investigate the transport properties of a quasi-one-dimensional ferromagnet-superconductor junction where the superconductor consists of mixed singlet and triplet pairings. We show that the relative orientation of the Stoner field (h ˜) in the ferromagnetic lead and the d vector of the superconductor acts like a on-off switch for the zero bias conductance of the device. In the regime, where triplet pairing amplitude dominates over the singlet counterpart (topological phase), a pair of Majorana zero modes appear at each end of the superconducting part of the nanowire. When h ˜ is parallel or antiparallel to the d vector, transport gets completely blocked due to blockage in pairing while, when h ˜ and d are perpendicular to each other, the zero energy two terminal differential conductance spectra exhibits sharp transition from 4 e2/h to 2 e2/h as the magnetization strength in the lead becomes larger than the chemical potential indicating the spin-selective coupling of a pair of Majorana zero modes to the lead.

Huge domain-wall speed variation with respect to ferromagnetic layer thickness in ferromagnetic Pt/Co/TiO2/Pt films

NASA Astrophysics Data System (ADS)

Kim, Dae-Yun; Park, Min-Ho; Park, Yong-Keun; Yu, Ji-Sung; Kim, Joo-Sung; Kim, Duck-Ho; Min, Byoung-Chul; Choe, Sug-Bong

2018-02-01

In this study, we investigate the influence of the ferromagnetic layer thickness on the magnetization process. A series of ultrathin Pt/Co/TiO2/Pt films exhibits domain-wall (DW) speed variation of over 100,000 times even under the same magnetic field, depending on the ferromagnetic layer thickness. From the creep-scaling analysis, such significant variation is found to be mainly attributable to the thickness-dependence of the creep-scaling constant in accordance with the creep-scaling theory of the linear proportionality between the creep-scaling constant and the ferromagnetic layer thickness. Therefore, a thinner film shows a faster DW speed. The DW roughness also exhibits sensitive dependence on the ferromagnetic layer thickness: a thinner film shows smoother DW. The present observation provided a guide for an optimal design rule of the ferromagnetic layer thickness for better performance of DW-based devices.

Unusual negative permeability of single magnetic nanowire excited by the spin transfer torque effect

NASA Astrophysics Data System (ADS)

Han, Mangui; Zhou, Wu

2018-07-01

Due to the effect of spin transfer torque, negative imaginary parts of permeability (μ″ < 0) are reported in a ferromagnetic nanowire. It is found that negative μ″ values are resulted from the interaction of spin polarized conduction electrons with the spatially non-uniform distributed magnetic moments at both ends of nanowires. The results are well explained from the effect of spin transfer torque on the precession of magnetization under the excitation of both the pulsed magnetic field and static electric field.

Ultralight Conductive Silver Nanowire Aerogels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qian, Fang; Lan, Pui Ching; Freyman, Megan C.

Low-density metal foams have many potential applications in electronics, energy storage, catalytic supports, fuel cells, sensors, and medical devices. Here in this work, we report a new method for fabricating ultralight, conductive silver aerogel monoliths with predictable densities using silver nanowires. Silver nanowire building blocks were prepared by polyol synthesis and purified by selective precipitation. Silver aerogels were produced by freeze-casting nanowire aqueous suspensions followed by thermal sintering to weld the nanowire junctions. As-prepared silver aerogels have unique anisotropic microporous structures, with density precisely controlled by the nanowire concentration, down to 4.8 mg/cm 3 and an electrical conductivity up tomore » 51 000 S/m. Lastly, mechanical studies show that silver nanowire aerogels exhibit “elastic stiffening” behavior with a Young’s modulus up to 16 800 Pa.« less

Ultralight Conductive Silver Nanowire Aerogels

DOE PAGES

Qian, Fang; Lan, Pui Ching; Freyman, Megan C.; ...

2017-09-05

Low-density metal foams have many potential applications in electronics, energy storage, catalytic supports, fuel cells, sensors, and medical devices. Here in this work, we report a new method for fabricating ultralight, conductive silver aerogel monoliths with predictable densities using silver nanowires. Silver nanowire building blocks were prepared by polyol synthesis and purified by selective precipitation. Silver aerogels were produced by freeze-casting nanowire aqueous suspensions followed by thermal sintering to weld the nanowire junctions. As-prepared silver aerogels have unique anisotropic microporous structures, with density precisely controlled by the nanowire concentration, down to 4.8 mg/cm 3 and an electrical conductivity up tomore » 51 000 S/m. Lastly, mechanical studies show that silver nanowire aerogels exhibit “elastic stiffening” behavior with a Young’s modulus up to 16 800 Pa.« less

Ballistic Spin Field Effect Transistor Based on Silicon Nanowires

NASA Astrophysics Data System (ADS)

Osintsev, Dmitri; Sverdlov, Viktor; Stanojevic, Zlatan; Selberherr, Siegfried

2011-03-01

We investigate the properties of ballistic spin field-effect transistors build on silicon nanowires. An accurate description of the conduction band based on the k . p} model is necessary in thin and narrow silicon nanostructures. The subband effective mass and subband splitting dependence on the nanowire dimensions is analyzed and used in the transport calculations. The spin transistor is formed by sandwiching the nanowire between two ferromagnetic metallic contacts. Delta-function barriers at the interfaces between the contacts and the silicon channel are introduced. The major contribution to the electric field-dependent spin-orbit interaction in confined silicon systems is due to the interface-induced inversion asymmetry which is of the Dresselhaus type. We study the current and conductance through the system for the contacts being in parallel and anti-parallel configurations. Differences between the [100] and [110] orientated structures are investigated in details. This work is supported by the European Research Council through the grant #247056 MOSILSPIN.

Parallel pumping of a ferromagnetic nanostripe: Confinement quantization and off-resonant driving

NASA Astrophysics Data System (ADS)

Yarbrough, P. M.; Livesey, K. L.

2018-01-01

The parametric excitation of spin waves in a rectangular, ferromagnetic nanowire in the parallel pump configuration and with an applied field along the long axis of the wire is studied theoretically, using a semi-classical and semi-analytic Hamiltonian approach. We find that as a function of static applied field strength, there are jumps in the pump power needed to excite thermal spin waves. At these jumps, there is the possibility to non-resonantly excite spin waves near kz = 0. Spin waves with negative or positive group velocity and with different standing wave structures across the wire width can be excited by tuning the applied field. By using a magnetostatic Green's function that depends on both the nanowire's width and thickness—rather than just its aspect ratio—we also find that the threshold field strength varies considerably for nanowires with the same aspect ratio but of different sizes. Comparisons between different methods of calculations are made and the advantages and disadvantages of each are discussed.

Uniaxial Magnetization Performance of Textured Fe Nanowire Arrays Electrodeposited by a Pulsed Potential Deposition Technique

NASA Astrophysics Data System (ADS)

Neetzel, C.; Ohgai, T.; Yanai, T.; Nakano, M.; Fukunaga, H.

2017-11-01

Textured ferromagnetic Fe nanowire arrays were electrodeposited using a rectangular-pulsed potential deposition technique into anodized aluminum oxide nanochannels. During the electrodeposition of Fe nanowire arrays at a cathodic potential of - 1.2 V, the growth rate of the nanowires was ca. 200 nm s-1. The aspect ratio of Fe nanowires with a diameter of 30 ± 5 nm reached ca. 2000. The long axis of Fe nanowires corresponded with the <200> direction when a large overpotential during the on-time pulse was applied, whereas it orientated to the <110> direction under the potentiostatic condition with a small overpotential. By shifting the on-time cathode potential up to - 1.8 V, the texture coefficient for the (200) plane, TC200, reached up to 1.94. Perpendicular magnetization performance was observed in Fe nanowire arrays. With increasing TC200, the squareness of Fe nanowire arrays increased up to 0.95 with the coercivity maintained at 1.4 kOe at room temperature. This research result has opened a novel possibility of Fe nanowire arrays that can be applied for a new permanent magnetic material without rare-earth metals.

Fabrication of Si3N4 nanowire membranes: free standing disordered nanopapers and aligned nanowire assemblies

NASA Astrophysics Data System (ADS)

Liu, Haitao; Fang, Minghao; Huang, Zhaohui; Huang, Juntong; Liu, Yan-gai; Wu, Xiaowen

2016-08-01

Herein, ultralong silicon nitride nanowires were synthesized via a chemical vapor deposition method by using the low-cost quartz and silicon powder as raw materials. Simple processes were used for the fabrication of disordered and ordered nanowire membranes of pure silicon nitride nanowires. The nanowires in the disordered nanopapers are intertwined with each other to form a paper-like structure which exhibit excellent flame retardancy and mechanical properties. Fourier-transform infrared spectroscopy and thermal gravity analysis were employed to characterize the refractory performance of the disordered nanopapers. Highly ordered nanowire membranes were also assembled through a three-phase assembly approach which make the Si3N4 nanowires have potential use in textured ceramics and semiconductor field. Moreover, the surface nanowires can also be modified to be hydrophobic; this characteristic make the as-prepared nanowires have the potential to be assembled by the more effective Langmuir-Blodgett method and also make the disordered nanopapers possess a super-hydrophobic surface.

Topological insulator nanowires and nanowire hetero-junctions

NASA Astrophysics Data System (ADS)

Deng, Haiming; Zhao, Lukas; Wade, Travis; Konczykowski, Marcin; Krusin-Elbaum, Lia

2014-03-01

The existing topological insulator materials (TIs) continue to present a number of challenges to complete understanding of the physics of topological spin-helical Dirac surface conduction channels, owing to a relatively large charge conduction in the bulk. One way to reduce the bulk contribution and to increase surface-to-volume ratio is by nanostructuring. Here we report on the synthesis and characterization of Sb2Te3, Bi2Te3 nanowires and nanotubes and Sb2Te3/Bi2Te3 heterojunctions electrochemically grown in porous anodic aluminum oxide (AAO) membranes with varied (from 50 to 150 nm) pore diameters. Stoichiometric rigid polycrystalline nanowires with controllable cross-sections were obtained using cell voltages in the 30 - 150 mV range. Transport measurements in up to 14 T magnetic fields applied along the nanowires show Aharonov-Bohm (A-B) quantum oscillations with periods corresponding to the nanowire diameters. All nanowires were found to exhibit sharp weak anti-localization (WAL) cusps, a characteristic signature of TIs. In addition to A-B oscillations, new quantization plateaus in magnetoresistance (MR) at low fields (< 0 . 7T) were observed. The analysis of MR as well as I - V characteristics of heterojunctions will be presented. Supported in part by NSF-DMR-1122594, NSF-DMR-1312483-MWN, and DOD-W911NF-13-1-0159.

Au nanostructure-decorated TiO2 nanowires exhibiting photoactivity across entire UV-visible region for photoelectrochemical water splitting.

PubMed

Pu, Ying-Chih; Wang, Gongming; Chang, Kao-Der; Ling, Yichuan; Lin, Yin-Kai; Fitzmorris, Bob C; Liu, Chia-Ming; Lu, Xihong; Tong, Yexiang; Zhang, Jin Z; Hsu, Yung-Jung; Li, Yat

2013-08-14

Here we demonstrate that the photoactivity of Au-decorated TiO2 electrodes for photoelectrochemical water oxidation can be effectively enhanced in the entire UV-visible region from 300 to 800 nm by manipulating the shape of the decorated Au nanostructures. The samples were prepared by carefully depositing Au nanoparticles (NPs), Au nanorods (NRs), and a mixture of Au NPs and NRs on the surface of TiO2 nanowire arrays. As compared with bare TiO2, Au NP-decorated TiO2 nanowire electrodes exhibited significantly enhanced photoactivity in both the UV and visible regions. For Au NR-decorated TiO2 electrodes, the photoactivity enhancement was, however, observed in the visible region only, with the largest photocurrent generation achieved at 710 nm. Significantly, TiO2 nanowires deposited with a mixture of Au NPs and NRs showed enhanced photoactivity in the entire UV-visible region. Monochromatic incident photon-to-electron conversion efficiency measurements indicated that excitation of surface plasmon resonance of Au is responsible for the enhanced photoactivity of Au nanostructure-decorated TiO2 nanowires. Photovoltage experiment showed that the enhanced photoactivity of Au NP-decorated TiO2 in the UV region was attributable to the effective surface passivation of Au NPs. Furthermore, 3D finite-difference time domain simulation was performed to investigate the electrical field amplification at the interface between Au nanostructures and TiO2 upon SPR excitation. The results suggested that the enhanced photoactivity of Au NP-decorated TiO2 in the UV region was partially due to the increased optical absorption of TiO2 associated with SPR electrical field amplification. The current study could provide a new paradigm for designing plasmonic metal/semiconductor composite systems to effectively harvest the entire UV-visible light for solar fuel production.

Ultrahigh-Density Nanowire Arrays Grown in Self-Assembled Diblock Copolymer Templates

NASA Astrophysics Data System (ADS)

Thurn-Albrecht, T.; Schotter, J.; Kästle, G. A.; Emley, N.; Shibauchi, T.; Krusin-Elbaum, L.; Guarini, K.; Black, C. T.; Tuominen, M. T.; Russell, T. P.

2000-12-01

We show a simple, robust, chemical route to the fabrication of ultrahigh-density arrays of nanopores with high aspect ratios using the equilibrium self-assembled morphology of asymmetric diblock copolymers. The dimensions and lateral density of the array are determined by segmental interactions and the copolymer molecular weight. Through direct current electrodeposition, we fabricated vertical arrays of nanowires with densities in excess of 1.9 × 1011 wires per square centimeter. We found markedly enhanced coercivities with ferromagnetic cobalt nanowires that point toward a route to ultrahigh-density storage media. The copolymer approach described is practical, parallel, compatible with current lithographic processes, and amenable to multilayered device fabrication.

Ultrahigh-density nanowire arrays grown in self-assembled diblock copolymer templates.

PubMed

Thurn-Albrecht, T; Schotter, J; Kästle, G A; Emley, N; Shibauchi, T; Krusin-Elbaum, L; Guarini, K; Black, C T; Tuominen, M T; Russell, T P

2000-12-15

We show a simple, robust, chemical route to the fabrication of ultrahigh-density arrays of nanopores with high aspect ratios using the equilibrium self-assembled morphology of asymmetric diblock copolymers. The dimensions and lateral density of the array are determined by segmental interactions and the copolymer molecular weight. Through direct current electrodeposition, we fabricated vertical arrays of nanowires with densities in excess of 1.9 x 10(11) wires per square centimeter. We found markedly enhanced coercivities with ferromagnetic cobalt nanowires that point toward a route to ultrahigh-density storage media. The copolymer approach described is practical, parallel, compatible with current lithographic processes, and amenable to multilayered device fabrication.

High-Quality CrO2 Nanowires for Dissipation-less Spintronics

NASA Astrophysics Data System (ADS)

Singh, Amrita; Jansen, Charlotte; Lahabi, Kaveh; Aarts, Jan

2016-10-01

Superconductor-ferromagnet (S-F) hybrids based on half-metallic ferromagnets, such as CrO2 , are ideal candidates for superconducting spintronic applications. This is primarily due to the fully spin-polarized nature of CrO2 , which produces enhanced long-range triplet proximity effects. However, reliable production of CrO2 -based Josephson junctions (JJs) has proved to be extremely challenging because of a poorly controlled interface transparency and an incomplete knowledge of the local magnetization of the CrO2 films. To address these issues, we use a bottom-up approach to grow CrO2 nanowires on prepatterned substrates via chemical-vapor deposition. A comprehensive study of the growth mechanism enables us to reliably synthesize faceted, homogeneous CrO2 wires with a well-defined magnetization state. Combining these high-quality wires with a superconductor produces JJs with a high interface transparency, leading to exceptionally large 100% spin-polarized supercurrents, with critical current densities exceeding 109 Am-2 over distances as long as 600 nm. These CrO2 -nanowire-based JJs thus provide a realistic route to creating a scalable device platform for dissipation-less spintronics.

Domain-wall trapping in a ferromagnetic nanowire network

NASA Astrophysics Data System (ADS)

Saitoh, E.; Tanaka, M.; Miyajima, H.; Yamaoka, T.

2003-05-01

The magnetic domain configuration in a submicron Ni81Fe19 wire network has been investigated by magnetic force microscopy. To improve the responsivity of the magnetic force microscope, an active quality factor autocontrol method was adopted. In the remanent state, domain walls were observed trapped firmly at the vertexes of the network. The magnetic domain configurations appear to minimize the exchange energy at the vertexes. These results indicate that the magnetic property of the ferromagnetic network can be described in terms of the uniform magnetic moments of the wires and interwire magnetic interactions at the vertexes. The observed structure of the domain walls is well reproduced by micromagnetic simulations.

Tailoring Staircase-like Hysteresis Loops in Electrodeposited Trisegmented Magnetic Nanowires: a Strategy toward Minimization of Interwire Interactions.

PubMed

Zhang, Jin; Agramunt-Puig, Sebastià; Del-Valle, Núria; Navau, Carles; Baró, Maria D; Estradé, Sònia; Peiró, Francesca; Pané, Salvador; Nelson, Bradley J; Sanchez, Alvaro; Nogués, Josep; Pellicer, Eva; Sort, Jordi

2016-02-17

A new strategy to minimize magnetic interactions between nanowires (NWs) dispersed in a fluid is proposed. Such a strategy consists of preparing trisegmented NWs containing two antiparallel ferromagnetic segments with dissimilar coercivity separated by a nonmagnetic spacer. The trisegmented NWs exhibit a staircase-like hysteresis loop with tunable shape that depends on the relative length of the soft- and hard-magnetic segments and the respective values of saturation magnetization. Such NWs are prepared by electrodepositing CoPt/Cu/Ni in a polycarbonate (PC) membrane. The antiparallel alignment is set by applying suitable magnetic fields while the NWs are still embedded in the PC membrane. Analytic calculations are used to demonstrate that the interaction magnetic energy from fully compensated trisegmented NWs with antiparallel alignment is reduced compared to a single-component NW with the same length or the trisegmented NWs with the two ferromagnetic counterparts parallel to each other. The proposed approach is appealing for the use of magnetic NWs in certain biological or catalytic applications where the aggregation of NWs is detrimental for optimized performance.

Optimization of yield in magnetic cell separations using nickel nanowires of different lengths.

PubMed

Hultgren, Anne; Tanase, Monica; Felton, Edward J; Bhadriraju, Kiran; Salem, Aliasger K; Chen, Christopher S; Reich, Daniel H

2005-01-01

Ferromagnetic nanowires are shown to perform both high yield and high purity single-step cell separations on cultures of NIH-3T3 mouse fibroblast cells. The nanowires are made by electrochemical deposition in nanoporous templates, permitting detailed control of their chemical and physical properties. When added to fibroblast cell cultures, the nanowires are internalized by the cells via the integrin-mediated adhesion pathway. The effectiveness of magnetic cell separations using Ni nanowires 350 nm in diameter and 5-35 micrometers long in field gradients of 40 T/m was compared to commercially available superparamagnetic beads. The percent yield of the separated populations is found to be optimized when the length of the nanowire is matched to the diameter of the cells in the culture. Magnetic cell separations performed under these conditions achieve 80% purity and 85% yield, a 4-fold increase over the beads. This effect is shown to be robust when the diameter of the cell is changed within the same cell line using mitomycin-C.

Understanding magnetotransport signatures in networks of connected permalloy nanowires

NASA Astrophysics Data System (ADS)

Le, B. L.; Park, J.; Sklenar, J.; Chern, G.-W.; Nisoli, C.; Watts, J. D.; Manno, M.; Rench, D. W.; Samarth, N.; Leighton, C.; Schiffer, P.

2017-02-01

The change in electrical resistance associated with the application of an external magnetic field is known as the magnetoresistance (MR). The measured MR is quite complex in the class of connected networks of single-domain ferromagnetic nanowires, known as "artificial spin ice," due to the geometrically induced collective behavior of the nanowire moments. We have conducted a thorough experimental study of the MR of a connected honeycomb artificial spin ice, and we present a simulation methodology for understanding the detailed behavior of this complex correlated magnetic system. Our results demonstrate that the behavior, even at low magnetic fields, can be well described only by including significant contributions from the vertices at which the legs meet, opening the door to new geometrically induced MR phenomena.

Solution-processed copper-nickel nanowire anodes for organic solar cells

NASA Astrophysics Data System (ADS)

Stewart, Ian E.; Rathmell, Aaron R.; Yan, Liang; Ye, Shengrong; Flowers, Patrick F.; You, Wei; Wiley, Benjamin J.

2014-05-01

This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%.This work describes a process to make anodes for organic solar cells from copper-nickel nanowires with solution-phase processing. Copper nanowire films were coated from solution onto glass and made conductive by dipping them in acetic acid. Acetic acid removes the passivating oxide from the surface of copper nanowires, thereby reducing the contact resistance between nanowires to nearly the same extent as hydrogen annealing. Films of copper nanowires were made as oxidation resistant as silver nanowires under dry and humid conditions by dipping them in an electroless nickel plating solution. Organic solar cells utilizing these completely solution-processed copper-nickel nanowire films exhibited efficiencies of 4.9%. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr01024h

TiO2 nanowire-templated hierarchical nanowire network as water-repelling coating

NASA Astrophysics Data System (ADS)

Hang, Tian; Chen, Hui-Jiuan; Xiao, Shuai; Yang, Chengduan; Chen, Meiwan; Tao, Jun; Shieh, Han-ping; Yang, Bo-ru; Liu, Chuan; Xie, Xi

2017-12-01

Extraordinary water-repelling properties of superhydrophobic surfaces make them novel candidates for a great variety of potential applications. A general approach to achieve superhydrophobicity requires low-energy coating on the surface and roughness on nano- and micrometre scale. However, typical construction of superhydrophobic surfaces with micro-nano structure through top-down fabrication is restricted by sophisticated fabrication techniques and limited choices of substrate materials. Micro-nanoscale topographies templated by conventional microparticles through surface coating may produce large variations in roughness and uncontrollable defects, resulting in poorly controlled surface morphology and wettability. In this work, micro-nanoscale hierarchical nanowire network was fabricated to construct self-cleaning coating using one-dimensional TiO2 nanowires as microscale templates. Hierarchical structure with homogeneous morphology was achieved by branching ZnO nanowires on the TiO2 nanowire backbones through hydrothermal reaction. The hierarchical nanowire network displayed homogeneous micro/nano-topography, in contrast to hierarchical structure templated by traditional microparticles. This hierarchical nanowire network film exhibited high repellency to both water and cell culture medium after functionalization with fluorinated organic molecules. The hierarchical structure templated by TiO2 nanowire coating significantly increased the surface superhydrophobicity compared to vertical ZnO nanowires with nanotopography alone. Our results demonstrated a promising strategy of using nanowires as microscale templates for the rational design of hierarchical coatings with desired superhydrophobicity that can also be applied to various substrate materials.

TiO2 nanowire-templated hierarchical nanowire network as water-repelling coating

PubMed Central

Hang, Tian; Chen, Hui-Jiuan; Xiao, Shuai; Yang, Chengduan; Chen, Meiwan; Tao, Jun; Shieh, Han-ping; Yang, Bo-ru; Liu, Chuan

2017-01-01

Extraordinary water-repelling properties of superhydrophobic surfaces make them novel candidates for a great variety of potential applications. A general approach to achieve superhydrophobicity requires low-energy coating on the surface and roughness on nano- and micrometre scale. However, typical construction of superhydrophobic surfaces with micro-nano structure through top-down fabrication is restricted by sophisticated fabrication techniques and limited choices of substrate materials. Micro-nanoscale topographies templated by conventional microparticles through surface coating may produce large variations in roughness and uncontrollable defects, resulting in poorly controlled surface morphology and wettability. In this work, micro-nanoscale hierarchical nanowire network was fabricated to construct self-cleaning coating using one-dimensional TiO2 nanowires as microscale templates. Hierarchical structure with homogeneous morphology was achieved by branching ZnO nanowires on the TiO2 nanowire backbones through hydrothermal reaction. The hierarchical nanowire network displayed homogeneous micro/nano-topography, in contrast to hierarchical structure templated by traditional microparticles. This hierarchical nanowire network film exhibited high repellency to both water and cell culture medium after functionalization with fluorinated organic molecules. The hierarchical structure templated by TiO2 nanowire coating significantly increased the surface superhydrophobicity compared to vertical ZnO nanowires with nanotopography alone. Our results demonstrated a promising strategy of using nanowires as microscale templates for the rational design of hierarchical coatings with desired superhydrophobicity that can also be applied to various substrate materials. PMID:29308265

RbEu (Fe1-xNix) 4As4 : From a ferromagnetic superconductor to a superconducting ferromagnet

NASA Astrophysics Data System (ADS)

Liu, Yi; Liu, Ya-Bin; Yu, Ya-Long; Tao, Qian; Feng, Chun-Mu; Cao, Guang-Han

2017-12-01

The intrinsically hole-doped RbEuFe4As4 exhibits bulk superconductivity at Tsc=36.5 K and ferromagnetic ordering in the Eu sublattice at Tm=15 K. Here we present a hole-compensation study by introducing extra itinerant electrons via a Ni substitution in the ferromagnetic superconductor RbEuFe4As4 with Tsc>Tm . With the Ni doping, Tsc decreases rapidly, and the Eu-spin ferromagnetism and its Tm remain unchanged. Consequently, the system RbEu (Fe1-xNix) 4As4 transforms into a superconducting ferromagnet with Tm>Tsc for 0.07 ≤x ≤0.08 . The occurrence of superconducting ferromagnets is attributed to the decoupling between Eu2 + spins and superconducting Cooper pairs. The superconducting and magnetic phase diagram is established, which additionally includes a recovered yet suppressed spin-density-wave state.

Template-Assisted Scalable Nanowire Networks.

PubMed

Friedl, Martin; Cerveny, Kris; Weigele, Pirmin; Tütüncüoglu, Gozde; Martí-Sánchez, Sara; Huang, Chunyi; Patlatiuk, Taras; Potts, Heidi; Sun, Zhiyuan; Hill, Megan O; Güniat, Lucas; Kim, Wonjong; Zamani, Mahdi; Dubrovskii, Vladimir G; Arbiol, Jordi; Lauhon, Lincoln J; Zumbühl, Dominik M; Fontcuberta I Morral, Anna

2018-04-11

Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of qubits, though branched nanowires are needed to perform qubit manipulations. Here we report a gold-free templated growth of III-V nanowires by molecular beam epitaxy using an approach that enables patternable and highly regular branched nanowire arrays on a far greater scale than what has been reported thus far. Our approach relies on the lattice-mismatched growth of InAs on top of defect-free GaAs nanomembranes yielding laterally oriented, low-defect InAs and InGaAs nanowires whose shapes are determined by surface and strain energy minimization. By controlling nanomembrane width and growth time, we demonstrate the formation of compositionally graded nanowires with cross-sections less than 50 nm. Scaling the nanowires below 20 nm leads to the formation of homogeneous InGaAs nanowires, which exhibit phase-coherent, quasi-1D quantum transport as shown by magnetoconductance measurements. These results are an important advance toward scalable topological quantum computing.

Synthesis, Properties and Applications of Gallium Nitride Nanowires

NASA Astrophysics Data System (ADS)

Ma, Zheng

This main focus of the work is on controlling the growth morphology in GaN and related nanowires. Two key results are presented: (1) demonstration of GaN nanowire growth in a newly discovered `serrated' morphology and (2) demonstration of Mn-doped, GaMnN nanowires by a new method. In (1) it is shown that simply by controlling the type of catalyst, size of the catalyst and the initial ratio of the precursor materials, GaN nanowire growth in a highly periodic serrated morphology can be obtained. Unlike regular non-serrated wires which grow in the non-polar [1010] direction, growth of the serrated wires is in the polar [0001] direction. The serrated faces are oriented in the semi-polar directions. Wires with serrated faces in both [1011] and [1122] semi-polar directions have been obtained. In (2) it has been shown that by using Au-Mn alloy catalyst method, GaMnN wire growth can be obtained. This is a significant result since this may be the first demonstration wherein Mn doping is achieved by introducing Mn as a catalyst rather than as a source material. The growth direction of these GaMnN wires is in the non-polar direction as in the case of non-serrated wires. Interestingly, unlike the non-serrated GaN wires, in this case the growth direction is [1120]. A second focus of the work is on the investigation of transport properties of serrated GaN nanowires and comparison with the non-serrated GaN nanowires. For the serrated nanowires our results indicate significant influence of surface effects on the electronic transport resulting in much higher electrical resistivity. A third focus of the work is on the investigation of magnetic properties of the GaMnN nanowires which indicates potential weak ferromagnetic behavior. This is consistent with low hole concentration and low Mn doping concentration (~0.5%) in these nanowires.

Interfacial Ferromagnetism in LaNiO3/CaMnO3 Superlattices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grutter, Alexander J.; Yang, Hao; Kirby, B. J.

2013-08-01

We observe interfacial ferromagnetism in superlattices of the paramagnetic metal LaNiO3 and the antiferromagnetic insulator CaMnO3. LaNiO3 exhibits a thickness dependent metal-insulator transition and we find the emergence of ferromagnetism to be coincident with the conducting state of LaNiO3. That is, only superlattices in which the LaNiO3 layers are metallic exhibit ferromagnetism. Using several magnetic probes, we have determined that the ferromagnetism arises in a single unit cell of CaMnO3 at the interface. Together these results suggest that ferromagnetism can be attributed to a double exchange interaction among Mn ions mediated by the adjacent itinerant metal.

Highly infrared sensitive VO2 nanowires for a nano-optical device.

PubMed

Bhuyan, Prabal Dev; Gupta, Sanjeev K; Kumar, Ashok; Sonvane, Yogesh; Gajjar, P N

2018-04-25

Recent studies on the electronic, magnetic and optical properties of VO2 (vanadium dioxide) materials have motivated the exploration of one dimensional VO2 nanowires. First principles calculations were performed to investigate the structural, electronic, magnetic and optical properties of the monoclinic (M) and rutile (R) phases of VO2 nanowires. The monoclinic phase shows semiconducting behaviour with a band gap of 1.17 eV, whereas the rutile phase of VO2 nanowires behaves as a spin gapless semiconducting material, as band lines cross the Fermi level due only to up spin contribution. The monoclinic structure of VO2 nanowires is found to be paramagnetic and the rutile structure shows ferromagnetic half metal behavior. The conductivity calculation for VO2 nanowires shows the metal-insulator transition (MIT) temperature to be 250 K. The possible mechanism of VO2 nanowires to be used as smart windows has been discussed, as the nanowires are highly sensitive in the infrared (IR) region. Interestingly, at low temperature, the VO2 monoclinic structure allows infrared light to be transmitted, while VO2 with the rutile phase blocks light in the IR region. Furthermore, we adsorbed CO2, N2 and SO2 gas molecules on 1D VO2 monoclinic nanowire to investigate their interaction behaviour. It was observed that the absorption and transmission properties of VO2 dramatically change upon the adsorption of CO2 and SO2 gas molecules, which is likely to open up its application as an optical gas sensor.

Long term stability of nanowire nanoelectronics in physiological environments.

PubMed

Zhou, Wei; Dai, Xiaochuan; Fu, Tian-Ming; Xie, Chong; Liu, Jia; Lieber, Charles M

2014-03-12

Nanowire nanoelectronic devices have been exploited as highly sensitive subcellular resolution detectors for recording extracellular and intracellular signals from cells, as well as from natural and engineered/cyborg tissues, and in this capacity open many opportunities for fundamental biological research and biomedical applications. Here we demonstrate the capability to take full advantage of the attractive capabilities of nanowire nanoelectronic devices for long term physiological studies by passivating the nanowire elements with ultrathin metal oxide shells. Studies of Si and Si/aluminum oxide (Al2O3) core/shell nanowires in physiological solutions at 37 °C demonstrate long-term stability extending for at least 100 days in samples coated with 10 nm thick Al2O3 shells. In addition, investigations of nanowires configured as field-effect transistors (FETs) demonstrate that the Si/Al2O3 core/shell nanowire FETs exhibit good device performance for at least 4 months in physiological model solutions at 37 °C. The generality of this approach was also tested with in studies of Ge/Si and InAs nanowires, where Ge/Si/Al2O3 and InAs/Al2O3 core/shell materials exhibited stability for at least 100 days in physiological model solutions at 37 °C. In addition, investigations of hafnium oxide-Al2O3 nanolaminated shells indicate the potential to extend nanowire stability well beyond 1 year time scale in vivo. These studies demonstrate that straightforward core/shell nanowire nanoelectronic devices can exhibit the long term stability needed for a range of chronic in vivo studies in animals as well as powerful biomedical implants that could improve monitoring and treatment of disease.

Long Term Stability of Nanowire Nanoelectronics in Physiological Environments

PubMed Central

2015-01-01

Nanowire nanoelectronic devices have been exploited as highly sensitive subcellular resolution detectors for recording extracellular and intracellular signals from cells, as well as from natural and engineered/cyborg tissues, and in this capacity open many opportunities for fundamental biological research and biomedical applications. Here we demonstrate the capability to take full advantage of the attractive capabilities of nanowire nanoelectronic devices for long term physiological studies by passivating the nanowire elements with ultrathin metal oxide shells. Studies of Si and Si/aluminum oxide (Al2O3) core/shell nanowires in physiological solutions at 37 °C demonstrate long-term stability extending for at least 100 days in samples coated with 10 nm thick Al2O3 shells. In addition, investigations of nanowires configured as field-effect transistors (FETs) demonstrate that the Si/Al2O3 core/shell nanowire FETs exhibit good device performance for at least 4 months in physiological model solutions at 37 °C. The generality of this approach was also tested with in studies of Ge/Si and InAs nanowires, where Ge/Si/Al2O3 and InAs/Al2O3 core/shell materials exhibited stability for at least 100 days in physiological model solutions at 37 °C. In addition, investigations of hafnium oxide-Al2O3 nanolaminated shells indicate the potential to extend nanowire stability well beyond 1 year time scale in vivo. These studies demonstrate that straightforward core/shell nanowire nanoelectronic devices can exhibit the long term stability needed for a range of chronic in vivo studies in animals as well as powerful biomedical implants that could improve monitoring and treatment of disease. PMID:24479700

Comparative study of absorption in tilted silicon nanowire arrays for photovoltaics

PubMed Central

2014-01-01

Silicon nanowire arrays have been shown to demonstrate light trapping properties and promising potential for next-generation photovoltaics. In this paper, we show that the absorption enhancement in vertical nanowire arrays on a perfectly electric conductor can be further improved through tilting. Vertical nanowire arrays have a 66.2% improvement in ultimate efficiency over an ideal double-pass thin film of the equivalent amount of material. Tilted nanowire arrays, with the same amount of material, exhibit improved performance over vertical nanowire arrays across a broad range of tilt angles (from 38° to 72°). The optimum tilt of 53° has an improvement of 8.6% over that of vertical nanowire arrays and 80.4% over that of the ideal double-pass thin film. Tilted nanowire arrays exhibit improved absorption over the solar spectrum compared with vertical nanowires since the tilt allows for the excitation of additional modes besides the HE 1m modes that are excited at normal incidence. We also observed that tilted nanowire arrays have improved performance over vertical nanowire arrays for a large range of incidence angles (under about 60°). PMID:25435833

Comparative study of absorption in tilted silicon nanowire arrays for photovoltaics.

PubMed

Kayes, Md Imrul; Leu, Paul W

2014-01-01

Silicon nanowire arrays have been shown to demonstrate light trapping properties and promising potential for next-generation photovoltaics. In this paper, we show that the absorption enhancement in vertical nanowire arrays on a perfectly electric conductor can be further improved through tilting. Vertical nanowire arrays have a 66.2% improvement in ultimate efficiency over an ideal double-pass thin film of the equivalent amount of material. Tilted nanowire arrays, with the same amount of material, exhibit improved performance over vertical nanowire arrays across a broad range of tilt angles (from 38° to 72°). The optimum tilt of 53° has an improvement of 8.6% over that of vertical nanowire arrays and 80.4% over that of the ideal double-pass thin film. Tilted nanowire arrays exhibit improved absorption over the solar spectrum compared with vertical nanowires since the tilt allows for the excitation of additional modes besides the HE 1m modes that are excited at normal incidence. We also observed that tilted nanowire arrays have improved performance over vertical nanowire arrays for a large range of incidence angles (under about 60°).

Highly flexible, nonflammable and free-standing SiC nanowire paper

NASA Astrophysics Data System (ADS)

Chen, Jianjun; Liao, Xin; Wang, Mingming; Liu, Zhaoxiang; Zhang, Judong; Ding, Lijuan; Gao, Li; Li, Ye

2015-03-01

Flexible paper-like semiconductor nanowire materials are expected to meet the criteria for some emerging applications, such as components of flexible solar cells, electrical batteries, supercapacitors, nanocomposites, bendable or wearable electronic or optoelectronic components, and so on. As a new generation of wide-bandgap semiconductors and reinforcements in composites, SiC nanowires have advantages in power electronic applications and nanofiber reinforced ceramic composites. Herein, free-standing SiC nanowire paper consisting of ultralong single-crystalline SiC nanowires was prepared through a facile vacuum filtration approach. The ultralong SiC nanowires were synthesized by a sol-gel and carbothermal reduction method. The flexible paper composed of SiC nanowires is ~100 nm in width and up to several hundreds of micrometers in length. The nanowires are intertwisted with each other to form a three-dimensional network-like structure. SiC nanowire paper exhibits high flexibility and strong mechanical stability. The refractory performance and thermal stability of SiC nanowire paper were also investigated. The paper not only exhibits excellent nonflammability in fire, but also remains well preserved without visible damage when it is heated in an electric oven at a high temperature (1000 °C) for 3 h. With its high flexibility, excellent nonflammability, and high thermal stability, the free-standing SiC nanowire paper may have the potential to improve the ablation resistance of high temperature ceramic composites.Flexible paper-like semiconductor nanowire materials are expected to meet the criteria for some emerging applications, such as components of flexible solar cells, electrical batteries, supercapacitors, nanocomposites, bendable or wearable electronic or optoelectronic components, and so on. As a new generation of wide-bandgap semiconductors and reinforcements in composites, SiC nanowires have advantages in power electronic applications and nanofiber

Nanowire failure: long = brittle and short = ductile.

PubMed

Wu, Zhaoxuan; Zhang, Yong-Wei; Jhon, Mark H; Gao, Huajian; Srolovitz, David J

2012-02-08

Experimental studies of the tensile behavior of metallic nanowires show a wide range of failure modes, ranging from ductile necking to brittle/localized shear failure-often in the same diameter wires. We performed large-scale molecular dynamics simulations of copper nanowires with a range of nanowire lengths and provide unequivocal evidence for a transition in nanowire failure mode with change in nanowire length. Short nanowires fail via a ductile mode with serrated stress-strain curves, while long wires exhibit extreme shear localization and abrupt failure. We developed a simple model for predicting the critical nanowire length for this failure mode transition and showed that it is in excellent agreement with both the simulation results and the extant experimental data. The present results provide a new paradigm for the design of nanoscale mechanical systems that demarcates graceful and catastrophic failure. © 2012 American Chemical Society

Effect of nanowire curviness on the percolation resistivity of transparent, conductive metal nanowire networks

NASA Astrophysics Data System (ADS)

Hicks, Jeremy; Li, Junying; Ying, Chen; Ural, Ant

2018-05-01

We study the effect of nanowire curviness on the percolation resistivity of transparent, conductive metal nanowire networks by Monte Carlo simulations. We generate curvy nanowires as one-dimensional sticks using 3rd-order Bézier curves. The degree of curviness in the network is quantified by the concept of curviness angle and curl ratio. We systematically study the interaction between the effect of curviness and five other nanowire/device parameters on the network resistivity, namely nanowire density, nanowire length, device length, device width, and nanowire alignment. We find that the resistivity exhibits a power law dependence on the curl ratio, which is a signature of percolation transport. In each case, we extract the power-law scaling critical exponents and explain the results using geometrical and physical arguments. The value of the curl ratio critical exponent is not universal, but increases as the other nanowire/device parameters drive the network toward the percolation threshold. We find that, for randomly oriented networks, curviness is undesirable since it increases the resistivity. For well-aligned networks, on the other hand, some curviness is highly desirable, since the resistivity minimum occurs for partially curvy nanowires. We explain these results by considering the two competing effects of curviness on the percolation resistivity. The results presented in this work can be extended to any network, film, or nanocomposite consisting of one-dimensional nanoelements. Our results show that Monte Carlo simulations are an essential predictive tool for both studying the percolation transport and optimizing the electronic properties of transparent, conductive nanowire networks for a wide range of applications.

Ferromagnetic behavior and exchange bias effect in akaganeite nanorods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tadic, Marin, E-mail: marint@vinca.rs; Milosevic, Irena; Motte, Laurence

We report ferromagnetic-like properties and exchange bias effect in akaganeite (β-FeOOH) nanorods. They exhibit a Néel temperature T{sub N} = 259 K and ferromagnetic-like hysteresis behavior both below and above T{sub N}. An exchange bias effect is observed below T{sub N} and represents an interesting behavior for akaganeite nanorods. These results are explained on the basis of a core-shell structure in which the core has bulk akaganeite magnetic properties (i.e., antiferromagnetic ordering) while the shell exhibits a disordered spin state. Thus, the nanorods show ferromagnetic properties and an exchange bias effect at the same time, increasing their potential for use in practical applications.

Fabrication of enzyme-degradable and size-controlled protein nanowires using single particle nano-fabrication technique

PubMed Central

Omichi, Masaaki; Asano, Atsushi; Tsukuda, Satoshi; Takano, Katsuyoshi; Sugimoto, Masaki; Saeki, Akinori; Sakamaki, Daisuke; Onoda, Akira; Hayashi, Takashi; Seki, Shu

2014-01-01

Protein nanowires exhibiting specific biological activities hold promise for interacting with living cells and controlling and predicting biological responses such as apoptosis, endocytosis and cell adhesion. Here we report the result of the interaction of a single high-energy charged particle with protein molecules, giving size-controlled protein nanowires with an ultra-high aspect ratio of over 1,000. Degradation of the human serum albumin nanowires was examined using trypsin. The biotinylated human serum albumin nanowires bound avidin, demonstrating the high affinity of the nanowires. Human serum albumin–avidin hybrid nanowires were also fabricated from a solid state mixture and exhibited good mechanical strength in phosphate-buffered saline. The biotinylated human serum albumin nanowires can be transformed into nanowires exhibiting a biological function such as avidin–biotinyl interactions and peroxidase activity. The present technique is a versatile platform for functionalizing the surface of any protein molecule with an extremely large surface area. PMID:24770668

Ramp-edge structured tunneling devices using ferromagnet electrodes

DOEpatents

Kwon, Chuhee [Long Beach, CA; Jia, Quanxi [Los Alamos, NM

2002-09-03

The fabrication of ferromagnet-insulator-ferromagnet magnetic tunneling junction devices using a ramp-edge geometry based on, e.g., (La.sub.0.7 Sr.sub.0.3) MnO.sub.3, ferromagnetic electrodes and a SrTiO.sub.3 insulator is disclosed. The maximum junction magnetoresistance (JMR) as large as 23% was observed below 300 Oe at low temperatures (T<100 K). These ramp-edge junctions exhibited JMR of 6% at 200 K with a field less than 100 Oe.

Why self-catalyzed nanowires are most suitable for large-scale hierarchical integrated designs of nanowire nanoelectronics

NASA Astrophysics Data System (ADS)

Noor Mohammad, S.

2011-10-01

Nanowires are grown by a variety of mechanisms, including vapor-liquid-solid, vapor-quasiliquid-solid or vapor-quasisolid-solid, oxide-assisted growth, and self-catalytic growth (SCG) mechanisms. A critical analysis of the suitability of self-catalyzed nanowires, as compared to other nanowires, for next-generation technology development has been carried out. Basic causes of superiority of self-catalyzed (SCG) nanowires over other nanowires have been described. Polytypism in nanowires has been studied, and a model for polytypism has been proposed. The model predicts polytypism in good agreement with available experiments. This model, together with various evidences, demonstrates lower defects, dislocations, and stacking faults in SCG nanowires, as compared to those in other nanowires. Calculations of carrier mobility due to dislocation scattering, ionized impurity scattering, and acoustic phonon scattering explain the impact of defects, dislocations, and stacking faults on carrier transports in SCG and other nanowires. Analyses of growth mechanisms for nanowire growth directions indicate SCG nanowires to exhibit the most controlled growth directions. In-depth investigation uncovers the fundamental physics underlying the control of growth direction by the SCG mechanism. Self-organization of nanowires in large hierarchical arrays is crucial for ultra large-scale integration (ULSI). Unique features and advantages of self-organized SCG nanowires, unlike other nanowires, for this ULSI have been discussed. Investigations of nanowire dimension indicate self-catalyzed nanowires to have better control of dimension, higher stability, and higher probability, even for thinner structures. Theoretical calculations show that self-catalyzed nanowires, unlike catalyst-mediated nanowires, can have higher growth rate and lower growth temperature. Nanowire and nanotube characteristics have been found also to dictate the performance of nanoelectromechanical systems. Defects, such as

Synthesis and magnetic properties of bundled and dispersed Co{sub 3}O{sub 4} nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, B.B.; Wang, P.F.; Xu, J.C.

Highlights: • Co{sub 3}O{sub 4} nanowires possessed the same diameter and the different interwires distance. • All samples possessed antiferromagnetism and superparamagnetism at high temperature. • The exchange bias effect was observed at low temperature. • The surface spin coupling restrained the surface effect of magnetic nanostructures. - Abstract: The magnetic Co{sub 3}O{sub 4} nanowires were synthesized using the templates of SBA-15, and then the well-dispersed nanowires (D-wires) were separated from the bundled ordered nanowires (B-wires) with the centrifugal technique. TEM images indicated that D-wires were highly dispersed Co{sub 3}O{sub 4} nanowires and B-wires existed in bundles. All samples possessedmore » the antiferromagnetism and superparamagnetism at high temperature. After revealing the intrinsic magnetic properties of Co{sub 3}O{sub 4} nanowires with D-wires, the magnetic behavior of B-wires was discussed in detail, and then the magnetic interaction between neighboring nanowires could be deduced. The exchange bias effect from the body Co{sub 3}O{sub 4} antiferromagnetism and surface ferromagnetism was observed at low temperature. The magnetization of B-wires was higher than that of D-wires, which was attributed to the constraint of the surface spin coupling between the neighboring nanowires to the surface affect of nanostructures.« less

Diamond nanowires: fabrication, structure, properties, and applications.

PubMed

Yu, Yuan; Wu, Liangzhuan; Zhi, Jinfang

2014-12-22

C(sp(3) )C-bonded diamond nanowires are wide band gap semiconductors that exhibit a combination of superior properties such as negative electron affinity, chemical inertness, high Young's modulus, the highest hardness, and room-temperature thermal conductivity. The creation of 1D diamond nanowires with their giant surface-to-volume ratio enhancements makes it possible to control and enhance the fundamental properties of diamond. Although theoretical comparisons with carbon nanotubes have shown that diamond nanowires are energetically and mechanically viable structures, reproducibly synthesizing the crystalline diamond nanowires has remained challenging. We present a comprehensive, up-to-date review of diamond nanowires, including a discussion of their synthesis along with their structures, properties, and applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Transport properties of Sb-doped Si nanowires

NASA Astrophysics Data System (ADS)

Nukala, Prathyusha; Sapkota, Gopal; Gali, Pradeep; Philipose, U.

2012-08-01

We present a safe and cost-effective approach for synthesis of n-type Sb-doped Si nanowires. The nanowires were synthesized at ambient pressure using SiCl4 as Si source and pure Sb as the dopant source. Structural and compositional characterization using electron microscopy and X-ray spectroscopy show crystalline nanowires with lengths of 30-40 μm and diameters of 40-100 nm. A 3-4 nm thick amorphous oxide shell covers the surface of the nanowire, post-growth. The composition of this shell was confirmed by Raman spectroscopy. Growth of Si nanowires, followed by low temperature annealing in Sb vapor, was shown to be an effective technique for synthesizing Sb-doped Si nanowires. The doping concentration of Sb was found to be dependent on temperature, with Sb re-evaporating from the Si nanowire at higher doping temperatures. Field effect transistors (FETs) were fabricated to investigate the electrical transport properties of these nanowires. The as-grown Si nanowires were found to be p-type with a channel mobility of 40 cm2 V-1 s-1. After doping with Sb, these nanowires exhibited n-type behavior. The channel mobility and carrier concentration of the Sb-doped Si nanowires were estimated to be 288 cm2 V-1 s-1 and 5.3×1018 cm-3 respectively.

Magnetization Ratchet in Cylindrical Nanowires.

PubMed

Bran, Cristina; Berganza, Eider; Fernandez-Roldan, Jose A; Palmero, Ester M; Meier, Jessica; Calle, Esther; Jaafar, Miriam; Foerster, Michael; Aballe, Lucia; Fraile Rodriguez, Arantxa; P Del Real, Rafael; Asenjo, Agustina; Chubykalo-Fesenko, Oksana; Vazquez, Manuel

2018-05-31

The unidirectional motion of information carriers such as domain walls in magnetic nanostrips is a key feature for many future spintronic applications based on shift registers. This magnetic ratchet effect has so far been achieved in a limited number of complex nanomagnetic structures, for example, by lithographically engineered pinning sites. Here we report on a simple remagnetization ratchet originated in the asymmetric potential from the designed increasing lengths of magnetostatically coupled ferromagnetic segments in FeCo/Cu cylindrical nanowires. The magnetization reversal in neighboring segments propagates sequentially in steps starting from the shorter segments, irrespective of the applied field direction. This natural and efficient ratchet offers alternatives for the design of three-dimensional advanced storage and logic devices.

Ferromagnetic Switching of Knotted Vector Fields in Liquid Crystal Colloids.

PubMed

Zhang, Qiaoxuan; Ackerman, Paul J; Liu, Qingkun; Smalyukh, Ivan I

2015-08-28

We experimentally realize polydomain and monodomain chiral ferromagnetic liquid crystal colloids that exhibit solitonic and knotted vector field configurations. Formed by dispersions of ferromagnetic nanoplatelets in chiral nematic liquid crystals, these colloidal ferromagnets exhibit spontaneous long-range alignment of magnetic dipole moments of individual platelets, giving rise to a continuum of the magnetization field M(r). Competing effects of surface confinement and chirality prompt spontaneous formation and enable the optical generation of localized twisted solitonic structures with double-twist tubes and torus knots of M(r), which exhibit a strong sensitivity to the direction of weak magnetic fields ∼1  mT. Numerical modeling, implemented through free energy minimization to arrive at a field-dependent three-dimensional M(r), shows a good agreement with experiments and provides insights into the torus knot topology of observed field configurations and the corresponding physical underpinnings.

Transport properties of Sb doped Si nanowires

NASA Astrophysics Data System (ADS)

Nukala, Prathyusha; Sapkota, Gopal; Gali, Pradeep; Usha, Philipose

2011-10-01

n-type Si nanowires were synthesized at ambient pressure using SiCl4 as Si source and Sb source as the dopant. Sb doping of 3-4 wt % was achieved through a post growth diffusion technique. The nanowires were found to have an amorphous oxide shell that developed post-growth; the thickness of the shell is estimated to be about 3-4 nm. The composition of the amorphous shell covering the crystalline Si core was determined by Raman spectroscopy, with evidence that the shell was an amorphous oxide layer. Optical characterization of the as-grown nanowires showed green emission, attributed to the presence of the oxide shell covering the Si nanowire core. Etching of the oxide shell was found to decrease the intensity of this green emission. A single undoped Si nanowire contacted in an FET type configuration was found to be p-type with channel mobility of 20 cm^2V-1S-1. Sb doped Si nanowires exhibited n-type behavior, compensating for the holes in the undoped nanowire. The doped nanowires had carrier mobility and concentration of 160 cm^2V-1S-1 and 9.6 x 10^18cm-3 respectively.

Core-shell silicon nanowire solar cells

PubMed Central

Adachi, M. M.; Anantram, M. P.; Karim, K. S.

2013-01-01

Silicon nanowires can enhance broadband optical absorption and reduce radial carrier collection distances in solar cell devices. Arrays of disordered nanowires grown by vapor-liquid-solid method are attractive because they can be grown on low-cost substrates such as glass, and are large area compatible. Here, we experimentally demonstrate that an array of disordered silicon nanowires surrounded by a thin transparent conductive oxide has both low diffuse and specular reflection with total values as low as < 4% over a broad wavelength range of 400 nm < λ < 650 nm. These anti-reflective properties together with enhanced infrared absorption in the core-shell nanowire facilitates enhancement in external quantum efficiency using two different active shell materials: amorphous silicon and nanocrystalline silicon. As a result, the core-shell nanowire device exhibits a short-circuit current enhancement of 15% with an amorphous Si shell and 26% with a nanocrystalline Si shell compared to their corresponding planar devices. PMID:23529071

Electrical breakdown and nanogap formation of indium oxide core/shell heterostructure nanowires.

PubMed

Jung, Minkyung; Song, Woon; Sung Lee, Joon; Kim, Nam; Kim, Jinhee; Park, Jeunghee; Lee, Hyoyoung; Hirakawa, Kazuhiko

2008-12-10

We report the electrical breakdown behavior and subsequent nanogap formation of In(2)O(3)/InO(x) core/shell heterostructure nanowires with substrate-supported and suspended structures. The radial heterostructure nanowires, composed of crystalline In(2)O(3) cores and amorphous In-rich shells, are grown by chemical vapor deposition. As the nanowires broke down, they exhibited two distinct current drops in the current-voltage characteristics. The tips of the broken nanowires were found to have a cone or a volcano shape depending on the width of the nanowire. The shape, the size, and the position of the nanogap depend strongly on the device structure and the nanowire dimensions. The substrate-supported and the suspended devices exhibit distinct breakdown behavior which can be explained by the diffusive thermal transport model. The breakdown temperature of the nanowire is estimated to be about 450 K, close to the melting temperature of indium. We demonstrated the usefulness of this technique by successful fabrication of working pentacene field-effect transistors.

Novel gradient-diameter magnetic nanowire arrays with unconventional magnetic anisotropy behaviors.

PubMed

Wang, Jing; Zuo, Zhili; Huang, Liang; Warsi, Muhammad Asif; Xiao, John Q; Hu, Jun

2018-06-21

Fe-Co-Ni gradient-diameter magnetic nanowire arrays were fabricated via direct-current electrodeposition into a tapered anodic aluminium oxide template. In contrast to the magnetic behaviors of uniform-diameter nanowire arrays, these arrays exhibited tailorable magnetic anisotropy that can be used to switch magnetic nanowires easily and unconventional temperature-dependent coercivity with much better thermal stability.

Catalyst-Free Growth of Large Scale Ga2O3 Nanowires

DTIC Science & Technology

2001-11-01

XRD and TEM analyses indicate that the Ga 20 3 nanowires exhibit a monoclinic structure. PL characteristic of the Ga2O3 nanowires shows a UV emission...using Ga metal and N2 / H 20 reactants. The Ga2O3 nanowires, which have diameters ranging from 60 to 150 nm and lengths of several micrometers, are 133

Angular dependence of the magnetic properties of permalloy and nickel nanowires as a function of their diameters

NASA Astrophysics Data System (ADS)

Raviolo, Sofía; Tejo, Felipe; Bajales, Noelia; Escrig, Juan

2018-01-01

In this paper we have compared the angular dependence of the magnetic properties of permalloy (Ni80Fe20) and nickel nanowires by means of micromagnetic simulations. For each material we have chosen two diameters, 40 and 100 nm. Permalloy nanowires with smaller diameters (d = 40 nm) exhibit greater coercivity than nickel nanowires, regardless of the angle at which the external magnetic field is applied. In addition, both Py and Ni nanowires exhibit the same remanence values. However, the nanowires of larger diameters (d = 100 nm) exhibit a more complex behavior, noting that for small angles, nickel nanowires are those that now exhibit a greater coercivity in comparison to those of permalloy. The magnetization reversal modes vary as a function of the angle at which the external field is applied. When the field is applied parallel to the wire axis, it reverts through nucleation and propagation of domain walls, whereas when the field is applied perpendicular to the axis, it reverts by a pseudo-coherent rotation. These results may provide a guide to control the magnetic properties of nanowires for use in potential applications.

Angular dependence of switching behaviour in template released isolated NiFe nanowires

NASA Astrophysics Data System (ADS)

Sultan, Musaab Salman

2017-12-01

In this article, the magnetisation behaviour and magnetisation reversal process of both single and bundles of 3 and 7 closely-packed template released Ni60Fe40 nanowires were investigated using high-sensitivity Magneto-Optical Kerr Effect (MOKE) magnetometry. The nanowires were deposited from a dilute suspension onto gold pre-patterned silicon substrates. They were typically 9 μm in length with a diameter of approximately 200 nm. By increasing the number of clumped wires a reduction in the switching field was observed, suggesting that overall the bundle behaves like a single system and decreasing the effective external field required to switch the magnetisation. Square hysteresis loops with a sharp jump in the Kerr signal were seen for all MOKE measurement angles. This result may reflect the surface magnetisation of the nanowire, compared to their bulk behaviour as compared with the literature that adopted the same and different investigative techniques on comparable compositions and dimensions of wires. The influence of applying the magnetic field at different angles with respect to the long axis of the nanowire on the switching behaviour was analysed and compared with the theoretical calculations of non-uniform rotation of the curling model of domain reversal. An agreement and disagreement with this model was seen, respectively, for low and high angles, indicating the complexity of the magnetic state of such isolated nanowires. To confirm the results presented here, further studies are recommended using a combination of techniques sensitive to surface and bulk magnetisation on similar isolated ferromagnetic nanowires.

Functionalised zinc oxide nanowire gas sensors: Enhanced NO(2) gas sensor response by chemical modification of nanowire surfaces.

PubMed

Waclawik, Eric R; Chang, Jin; Ponzoni, Andrea; Concina, Isabella; Zappa, Dario; Comini, Elisabetta; Motta, Nunzio; Faglia, Guido; Sberveglieri, Giorgio

2012-01-01

Surface coating with an organic self-assembled monolayer (SAM) can enhance surface reactions or the absorption of specific gases and hence improve the response of a metal oxide (MOx) sensor toward particular target gases in the environment. In this study the effect of an adsorbed organic layer on the dynamic response of zinc oxide nanowire gas sensors was investigated. The effect of ZnO surface functionalisation by two different organic molecules, tris(hydroxymethyl)aminomethane (THMA) and dodecanethiol (DT), was studied. The response towards ammonia, nitrous oxide and nitrogen dioxide was investigated for three sensor configurations, namely pure ZnO nanowires, organic-coated ZnO nanowires and ZnO nanowires covered with a sparse layer of organic-coated ZnO nanoparticles. Exposure of the nanowire sensors to the oxidising gas NO(2) produced a significant and reproducible response. ZnO and THMA-coated ZnO nanowire sensors both readily detected NO(2) down to a concentration in the very low ppm range. Notably, the THMA-coated nanowires consistently displayed a small, enhanced response to NO(2) compared to uncoated ZnO nanowire sensors. At the lower concentration levels tested, ZnO nanowire sensors that were coated with THMA-capped ZnO nanoparticles were found to exhibit the greatest enhanced response. ΔR/R was two times greater than that for the as-prepared ZnO nanowire sensors. It is proposed that the ΔR/R enhancement in this case originates from the changes induced in the depletion-layer width of the ZnO nanoparticles that bridge ZnO nanowires resulting from THMA ligand binding to the surface of the particle coating. The heightened response and selectivity to the NO(2) target are positive results arising from the coating of these ZnO nanowire sensors with organic-SAM-functionalised ZnO nanoparticles.

Growth and Physical Property Study of Single Nanowire (Diameter ~45 nm) of Half Doped Manganite

DOE PAGES

Datta, Subarna; Chandra, Sayan; Samanta, Sudeshna; ...

2013-01-01

We repormore » t here the growth and characterization of functional oxide nanowire of hole doped manganite of La 0.5 Sr 0.5 MnO 3 (LSMO). We also report four-probe electrical resistance measurement of a single nanowire of LSMO (diameter ~45 nm) using focused ion beam (FIB) fabricated electrodes. The wires are fabricated by hydrothermal method using autoclave at a temperature of 270 °C. The elemental analysis and physical property like electrical resistivity are studied at an individual nanowire level. The quantitative determination of Mn valency and elemental mapping of constituent elements are done by using Electron Energy Loss Spectroscopy (EELS) in the Transmission Electron Microscopy (TEM) mode. We address the important issue of whether as a result of size reduction the nanowires can retain the desired composition, structure, and physical properties. The nanowires used are found to have a ferromagnetic transition ( T C ) at around 325 K which is very close to the bulk value of around 330 K found in single crystal of the same composition. It is confirmed that the functional behavior is likely to be retained even after size reduction of the nanowires to a diameter of 45 nm. The electrical resistivity shows insulating behavior within the measured temperature range which is similar to the bulk system.« less

Optically Transparent Ferromagnetic Nanogranular Films with Tunable Transmittance

PubMed Central

Kobayashi, Nobukiyo; Masumoto, Hiroshi; Takahashi, Saburo; Maekawa, Sadamichi

2016-01-01

Developing optically transparent magnets at room temperature is an important challenge. They would bring many innovations to various industries, not only for electronic and magnetic devices but also for optical applications. Here we introduce FeCo-(Al-fluoride) nanogranular films exhibiting ferromagnetic properties with high optical transparency in the visible light region. These films have a nanocomposite structure, in which nanometer-sized FeCo ferromagnetic granules are dispersed in an Al-fluoride crystallized matrix. The optical transmittance of these films is controlled by changing the magnetization. This is a new type of magneto-optical effect and is explained by spin-dependent charge oscillation between ferromagnetic granules due to quantum-mechanical tunneling. PMID:27677710

Enhanced spin transfer torque effect for transverse domain walls in cylindrical nanowires

NASA Astrophysics Data System (ADS)

Franchin, Matteo; Knittel, Andreas; Albert, Maximilian; Chernyshenko, Dmitri S.; Fischbacher, Thomas; Prabhakar, Anil; Fangohr, Hans

2011-09-01

Recent studies have predicted extraordinary properties for transverse domain walls in cylindrical nanowires: zero depinning current, the absence of the Walker breakdown, and applications as domain wall oscillators. In order to reliably control the domain wall motion, it is important to understand how they interact with pinning centers, which may be engineered, for example, through modulations in the nanowire geometry (such as notches or extrusions) or in the magnetic properties of the material. In this paper we study the motion and depinning of transverse domain walls through pinning centers in ferromagnetic cylindrical nanowires. We use (i) magnetic fields and (ii) spin-polarized currents to drive the domain walls along the wire. The pinning centers are modelled as a section of the nanowire which exhibits a uniaxial crystal anisotropy where the anisotropy easy axis and the wire axis enclose a variable angle θP. Using (i) magnetic fields, we find that the minimum and the maximum fields required to push the domain wall through the pinning center differ by 30%. On the contrary, using (ii) spin-polarized currents, we find variations of a factor 130 between the minimum value of the depinning current density (observed for θP=0∘, i.e., anisotropy axis pointing parallel to the wire axis) and the maximum value (for θP=90∘, i.e., anisotropy axis perpendicular to the wire axis). We study the depinning current density as a function of the height of the energy barrier of the pinning center using numerical and analytical methods. We find that for an industry standard energy barrier of 40kBT, a depinning current of about 5μA (corresponding to a current density of 6×1010A/m2 in a nanowire of 10nm diameter) is sufficient to depin the domain wall. We reveal and explain the mechanism that leads to these unusually low depinning currents. One requirement for this depinning mechanism is for the domain wall to be able to rotate around its own axis. With the right barrier design

Resonant features of the terahertz generation in semiconductor nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trukhin, V. N., E-mail: valera.truchin@mail.ioffe.ru; Bouravleuv, A. D.; Mustafin, I. A.

2016-12-15

The paper presents the results of experimental studies of the generation of terahertz radiation in periodic arrays of GaAs nanowires via excitation by ultrashort optical pulses. It is found that the generation of THz radiation exhibits resonant behavior due to the resonant excitation of cylindrical modes in the nanowires. At the optimal geometric parameters of the nanowire array, the generation efficiency is found to be higher than that for bulk p-InAs, which is one of the most effective coherent terahertz emitters.

Guided Growth of Horizontal p-Type ZnTe Nanowires

PubMed Central

2016-01-01

A major challenge toward large-scale integration of nanowires is the control over their alignment and position. A possible solution to this challenge is the guided growth process, which enables the synthesis of well-aligned horizontal nanowires that grow according to specific epitaxial or graphoepitaxial relations with the substrate. However, the guided growth of horizontal nanowires was demonstrated for a limited number of materials, most of which exhibit unintentional n-type behavior. Here we demonstrate the vapor–liquid–solid growth of guided horizontal ZnTe nanowires and nanowalls displaying p-type behavior on four different planes of sapphire. The growth directions of the nanowires are determined by epitaxial relations between the nanowires and the substrate or by a graphoepitaxial effect that guides their growth along nanogrooves or nanosteps along the surface. We characterized the crystallographic orientations and elemental composition of the nanowires using transmission electron microscopy and photoluminescence. The optoelectronic and electronic properties of the nanowires were studied by fabricating photodetectors and top-gate thin film transistors. These measurements showed that the guided ZnTe nanowires are p-type semiconductors and are photoconductive in the visible range. The guided growth of horizontal p-type nanowires opens up the possibility of parallel nanowire integration into functional systems with a variety of potential applications not available by other means. PMID:27885331

Guided Growth of Horizontal p-Type ZnTe Nanowires.

PubMed

Reut, Gilad; Oksenberg, Eitan; Popovitz-Biro, Ronit; Rechav, Katya; Joselevich, Ernesto

2016-08-04

A major challenge toward large-scale integration of nanowires is the control over their alignment and position. A possible solution to this challenge is the guided growth process, which enables the synthesis of well-aligned horizontal nanowires that grow according to specific epitaxial or graphoepitaxial relations with the substrate. However, the guided growth of horizontal nanowires was demonstrated for a limited number of materials, most of which exhibit unintentional n-type behavior. Here we demonstrate the vapor-liquid-solid growth of guided horizontal ZnTe nanowires and nanowalls displaying p-type behavior on four different planes of sapphire. The growth directions of the nanowires are determined by epitaxial relations between the nanowires and the substrate or by a graphoepitaxial effect that guides their growth along nanogrooves or nanosteps along the surface. We characterized the crystallographic orientations and elemental composition of the nanowires using transmission electron microscopy and photoluminescence. The optoelectronic and electronic properties of the nanowires were studied by fabricating photodetectors and top-gate thin film transistors. These measurements showed that the guided ZnTe nanowires are p-type semiconductors and are photoconductive in the visible range. The guided growth of horizontal p-type nanowires opens up the possibility of parallel nanowire integration into functional systems with a variety of potential applications not available by other means.

Ultrafast Carbon Dioxide Sorption Kinetics Using Lithium Silicate Nanowires.

PubMed

Nambo, Apolo; He, Juan; Nguyen, Tu Quang; Atla, Veerendra; Druffel, Thad; Sunkara, Mahendra

2017-06-14

In this paper, the Li 4 SiO 4 nanowires (NWs) were shown to be promising for CO 2 capture with ultrafast kinetics. Specifically, the nanowire powders exhibited an uptake of 0.35 g g -1 of CO 2 at an ultrafast adsorption rate of 0.22 g g -1 min -1 at 650-700 °C. Lithium silicate (Li 4 SiO 4 ) nanowires and nanopowders were synthesized using a "solvo-plasma" technique involving plasma oxidation of silicon precursors mixed with lithium hydroxide. The kinetic parameter values (k) extracted from sorption kinetics obtained using NW powders are 1 order of magnitude higher than those previously reported for the Li 4 SiO 4 -CO 2 reaction system. The time scales for CO 2 sorption using nanowires are approximately 3 min and two orders magnitude faster compared to those obtained using lithium silicate powders with spherical morphologies and aggregates. Furthermore, Li 4 SiO 4 nanowire powders showed reversibility through sorption-desorption cycles indicating their suitability for CO 2 capture applications. All of the morphologies of Li 4 SiO 4 powders exhibited a double exponential behavior in the adsorption kinetics indicating two distinct time constants for kinetic and the mass transfer limited regimes.

Compositional disorder and its effect on the thermoelectric performance of Zn₃P₂ nanowire-copper nanoparticle composites.

PubMed

Brockway, Lance; Vasiraju, Venkata; Vaddiraju, Sreeram

2014-03-28

Recent studies indicated that nanowire format of materials is ideal for enhancing the thermoelectric performance of materials. Most of these studies were performed using individual nanowires as the test elements. It is not currently clear whether bulk assemblies of nanowires replicate this enhanced thermoelectric performance of individual nanowires. Therefore, it is imperative to understand whether enhanced thermoelectric performance exhibited by individual nanowires can be extended to bulk assemblies of nanowires. It is also imperative to know whether the addition of metal nanoparticle to semiconductor nanowires can be employed for enhancing their thermoelectric performance further. Specifically, it is important to understand the effect of microstructure and composition on the thermoelectric performance on bulk compound semiconductor nanowire-metal nanoparticle composites. In this study, bulk composites composed of mixtures of copper nanoparticles with either unfunctionalized or 1,4-benzenedithiol (BDT) functionalized Zn₃P₂ nanowires were fabricated and analyzed for their thermoelectric performance. The results indicated that use of BDT functionalized nanowires for the fabrication of composites leads to interface-engineered composites that have uniform composition all across their cross-section. The interface engineering allows for increasing their Seebeck coefficients and electrical conductivities, relative to the Zn₃P₂ nanowire pellets. In contrast, the use of unfunctionalized Zn₃P₂ nanowires for the fabrication of composite leads to the formation of composites that are non-uniform in composition across their cross-section. Ultimately, the composites were found to have Zn₃P₂ nanowires interspersed with metal alloy nanoparticles. Such non-uniform composites exhibited very high electrical conductivities, but slightly lower Seebeck coefficients, relative to Zn₃P₂ nanowire pellets. These composites were found to show a very high zT of 0.23 at 770

Superconducting nanowires as nonlinear inductive elements for qubits

NASA Astrophysics Data System (ADS)

Ku, Jaseung; Manucharyan, Vladimir; Bezryadin, Alexey

2010-10-01

We report microwave transmission measurements of superconducting Fabry-Perot resonators, having a superconducting nanowire placed at a supercurrent antinode. As the plasma oscillation is excited, the supercurrent is forced to flow through the nanowire. The microwave transmission of the resonator-nanowire device shows a nonlinear resonance behavior, significantly dependent on the amplitude of the supercurrent oscillation. We show that such amplitude-dependent response is due to the nonlinearity of the current-phase relationship of the nanowire. The results are explained within a nonlinear oscillator model of the Duffing oscillator, in which the nanowire acts as a purely inductive element, in the limit of low temperatures and low amplitudes. The low-quality factor sample exhibits a “crater” at the resonance peak at higher driving power, which is due to dissipation. We observe a hysteretic bifurcation behavior of the transmission response to frequency sweep in a sample with a higher quality factor. The Duffing model is used to explain the Duffing bistability diagram. We also propose a concept of a nanowire-based qubit that relies on the current dependence of the kinetic inductance of a superconducting nanowire.

Shape Evolution of Highly Lattice-Mismatched InN/InGaN Nanowire Heterostructures

NASA Astrophysics Data System (ADS)

Yan, Lifan; Hazari, Arnab; Bhattacharya, Pallab; Millunchick, Joanna M.

2018-02-01

We have investigated the structure and shape of GaN-based nanowires grown on (001) Si substrates for optoelectronic device applications. The nanowire heterostructures contained InN disks and In0.4Ga0.6N barrier layers in the active region. The resulting nanowire array comprised two differently shaped nanowires: shorter pencil-like nanowires and longer bead-like nanowires. The two different nanowire shapes evolve due to a variation in the In incorporation rate, which was faster for the bead-like nanowires. Both types of nanowires exhibited evidence of significant migration of both Ga and In during growth. Ga tended to diffuse away and down along the sidewalls, resulting in a Ga-rich shell for all nanowires. Despite the complex structure and great variability in the In composition, the optical properties of the nanowire arrays were very good, with strong luminescence peaking at ˜ 1.63 μm.

Growth Mechanism of Nanowires: Binary and Ternary Chalcogenides

NASA Technical Reports Server (NTRS)

Singh, N. B.; Coriell, S. R.; Su, Ching-Hua; Hopkins, R. H.; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

2016-01-01

Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acousto-optical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

Vertical III-V nanowire device integration on Si(100).

PubMed

Borg, Mattias; Schmid, Heinz; Moselund, Kirsten E; Signorello, Giorgio; Gignac, Lynne; Bruley, John; Breslin, Chris; Das Kanungo, Pratyush; Werner, Peter; Riel, Heike

2014-01-01

We report complementary metal-oxide-semiconductor (CMOS)-compatible integration of compound semiconductors on Si substrates. InAs and GaAs nanowires are selectively grown in vertical SiO2 nanotube templates fabricated on Si substrates of varying crystallographic orientations, including nanocrystalline Si. The nanowires investigated are epitaxially grown, single-crystalline, free from threading dislocations, and with an orientation and dimension directly given by the shape of the template. GaAs nanowires exhibit stable photoluminescence at room temperature, with a higher measured intensity when still surrounded by the template. Si-InAs heterojunction nanowire tunnel diodes were fabricated on Si(100) and are electrically characterized. The results indicate a high uniformity and scalability in the fabrication process.

Observation of ferromagnetism in Mn doped KNbO3

NASA Astrophysics Data System (ADS)

Manikandan, M.; Venkateswaran, C.

2015-06-01

Pure and Mn doped KNbO3 have been prepared by ball milling assisted ceramic method. Mn ion had been doped at Nb site to induce ferromagnetism at room temperature. X-ray diffraction (XRD) patterns reveal the formation of orthorhombic phase. High resolution scanning electron micrograph (HR-SEM) of both pure and Mn doped samples show a mixture of spherical and plate like particles. Room temperature magnetic behavior of both the samples were analyzed using vibrating sample magnetometer (VSM). 5% Mn doped KNbO3 exhibits ferromagnetic behavior. Observed ferromagnetic feature has been explained by interactions between bound magnetic polarons which are created by Mn4+ ions.

Ultrathin Au-Alloy Nanowires at the Liquid-Liquid Interface.

PubMed

Chatterjee, Dipanwita; Shetty, Shwetha; Müller-Caspary, Knut; Grieb, Tim; Krause, Florian F; Schowalter, Marco; Rosenauer, Andreas; Ravishankar, Narayanan

2018-03-14

Ultrathin bimetallic nanowires are of importance and interest for applications in electronic devices such as sensors and heterogeneous catalysts. In this work, we have designed a new, highly reproducible and generalized wet chemical method to synthesize uniform and monodispersed Au-based alloy (AuCu, AuPd, and AuPt) nanowires with tunable composition using microwave-assisted reduction at the liquid-liquid interface. These ultrathin alloy nanowires are below 4 nm in diameter and about 2 μm long. Detailed microstructural characterization shows that the wires have an face centred cubic (FCC) crystal structure, and they have low-energy twin-boundary and stacking-fault defects along the growth direction. The wires exhibit remarkable thermal and mechanical stability that is critical for important applications. The alloy wires exhibit excellent electrocatalytic activity for methanol oxidation in an alkaline medium.

Preparation and characterization of oriented silica nanowires

NASA Astrophysics Data System (ADS)

Sun, S. H.; Meng, G. W.; Zhang, M. G.; Tian, Y. T.; Xie, T.; Zhang, L. D.

2003-11-01

Large-scale of oriented closely packed silica nanowire bunches have been synthesized by using large size (1-10 μm in diameter), low melting point tin droplets as catalyst on silicon wafers at 980 °C. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses show that the amorphous silica nanowires have lengths of 50-100 μm and diameters of 100-200 nm. Unlike any previous observed results using high melting point metal (such as gold and iron) as catalyst, the Sn catalyst growth exhibits many interesting phenomena. Each Sn ball can simultaneously catalyze the growth of many silica nanowires, which is quite different from the conventional vapor-liquid-solid process.

Towards metal chalcogenide nanowire-based colour-sensitive photodetectors

NASA Astrophysics Data System (ADS)

Butanovs, Edgars; Butikova, Jelena; Zolotarjovs, Aleksejs; Polyakov, Boris

2018-01-01

In recent years, nanowires have been shown to exhibit high photosensitivities, and, therefore are of interest in a variety of optoelectronic applications, for example, colour-sensitive photodetectors. In this study, we fabricated two-terminal PbS, In2S3, CdS and ZnSe single-nanowire photoresistor devices and tested applicability of these materials under the same conditions for colour-sensitive (405 nm, 532 nm and 660 nm) light detection. Nanowires were grown via atmospheric pressure chemical vapour transport method, their structure and morphology were characterized by scanning and transmission electron microscopy (SEM and TEM), X-ray diffraction (XRD), and optical properties were investigated with photoluminescence (PL) measurements. Single-nanowire photoresistors were fabricated via in situ nanomanipulations inside SEM, using focused ion beam (FIB) cutting and electron-beam-assisted platinum welding; their current-voltage characteristics and photoresponse values were measured. Applicability of the tested nanowire materials for colour-sensitive light detection is discussed.

Scalable hydrothermal synthesis of free-standing VO₂ nanowires in the M1 phase.

PubMed

Horrocks, Gregory A; Singh, Sujay; Likely, Maliek F; Sambandamurthy, G; Banerjee, Sarbajit

2014-09-24

VO2 nanostructures derived from solution-phase methods are often plagued by broadened and relatively diminished metal-insulator transitions and adventitious doping due to imperfect control of stoichiometry. Here, we demonstrate a stepwise scalable hydrothermal and annealing route for obtaining VO2 nanowires exhibiting almost 4 orders of magnitude abrupt (within 1 °C) metal-insulator transitions. The prepared nanowires have been characterized across their structural and electronic phase transitions using single-nanowire Raman microprobe analysis, ensemble differential scanning calorimetry, and single-nanowire electrical transport measurements. The electrical band gap is determined to be 600 meV and is consistent with the optical band gap of VO2, and the narrowness of differential scanning calorimetry profiles indicates homogeneity of stoichiometry. The preparation of high-quality free-standing nanowires exhibiting pronounced metal-insulator transitions by a solution-phase process allows for scalability, further solution-phase processing, incorporation within nanocomposites, and integration onto arbitrary substrates.

Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.

PubMed

Joyce, Hannah J; Wong-Leung, Jennifer; Yong, Chaw-Keong; Docherty, Callum J; Paiman, Suriati; Gao, Qiang; Tan, H Hoe; Jagadish, Chennupati; Lloyd-Hughes, James; Herz, Laura M; Johnston, Michael B

2012-10-10

Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering.

Semiconductor Nanowires and Nanotubes for Energy Conversion

NASA Astrophysics Data System (ADS)

Fardy, Melissa Anne

In recent years semiconductor nanowires and nanotubes have garnered increased attention for their unique properties. With their nanoscale dimensions comes high surface area and quantum confinement, promising enhancements in a wide range of applications. 1-dimensional nanostructures are especially attractive for energy conversion applications where photons, phonons, and electrons come into play. Since the bohr exciton radius and phonon and electron mean free paths are on the same length scales as nanowire diameters, optical, thermal, and electrical properties can be tuned by simple nanowire size adjustments. In addition, the high surface area inherent to nanowires and nanotubes lends them towards efficient charge separation and superior catalytic performance. In thermoelectric power generation, the nanoscale wire diameter can effectively scatter phonons, promoting reductions in thermal conductivity and enhancements in the thermoelectric figure of merit. To that end, single-crystalline arrays of PbS, PbSe, and PbTe nanowires have been synthesized by a chemical vapor transport approach. The electrical and thermal transport properties of the nanowires were characterized to investigate their potential as thermoelectric materials. Compared to bulk, the lead chalcogenide nanowires exhibit reduced thermal conductivity below 100 K by up to 3 orders of magnitude, suggesting that they may be promising thermoelectric materials. Smaller diameters and increased surface roughness are expected to give additional enhancements. The solution-phase synthesis of PbSe nanowires via oriented attachment of nanoparticles enables facile surface engineering and diameter control. Branched PbSe nanowires synthesized by this approach showed near degenerately doped charge carrier concentrations. Compared to the bulk, the PbSe nanowires exhibited a similar Seebeck coefficient and a significant reduction in thermal conductivity in the temperature range 20 K to 300 K. Thermal annealing of the Pb

Synthesis and Optical Properties of Silver Bicrystalline Nanowires

NASA Astrophysics Data System (ADS)

Sun, Yugang; Xia, Younan

2002-11-01

This paper describes a solution-phase route to the large-scale synthesis of silver nanowires with diameters in the range of 30-40 nm, and lengths up to ~50 μm. The initial step of this synthesis involved the formation of Pt nanoparticles by reducing PtCl2 with ethylene glycol (EG) refluxed at ~160 °C. These Pt nanoparticles could serve as seeds for the growth of silver (formed by reducing AgNO3 with EG) through heterogeneous nucleation process because their crystal structures and lattice constants matched closely. In the presence of poly(vinyl pyrrolidone) (PVP), the growth of silver could be led to a highly anisotropic mode with formation of uniform nanowires. UV-visible spectroscopy was used to track the growth process of silver nanowires because different silver nanostructures exhibited distinctive surface plasmon resonance peaks at different frequencies. SEM, TEM, XRD, and electron diffraction were used to characterize these silver nanowires, indicating the formation of a highly pure face-centered cubic phase, as well as uniform diameter and bicrystalline structure. The morphology of these silver nanostructures could be varied from particles and rods to long wires by tuning the reaction conditions, including reaction temperature, and the ratio of PVP to silver nitrate. These silver nanowires could be used as sacrificial templates to synthesize gold nanotubes via a template-engaged replacement reaction. The dispersion of gold nanotubes exhibited a strong extinction peak in the red regime, which was around 760 nm.

Simulating the Effect of Contact Atomic Structure on the Spin-Dependent Transport Properties of Gold Nanowires

NASA Astrophysics Data System (ADS)

Ansarino, Masoud; Ravan, Bahram Abedi

Some experimental research works report on the superb magnetoresistance properties of magnetically contacted gold nanowires. With the intention of trying to understand the spin-dependent transport mechanism of these structures, in this work we have used first-principles density functional theory methods to investigate effects of interface structure on the spintronic characteristics of Au nanowires. Monatomic chains of gold are sandwiched between two ferromagnetic electrodes of Fe and by substituting the interfacial Fe atoms with some other transition metal elements (including Cr, Mn, Co and Ni) the occurrence of possible enhancement in the electronic conductance and magnetoresistance characteristics of the device are investigated. It is observed that replacing the interfacial atoms with Ni raises the junction’s magnetoresistance ratio to as high as 2000%.

Nanostructured silicon ferromagnet collected by a permanent neodymium magnet.

PubMed

Okuno, Takahisa; Thürmer, Stephan; Kanoh, Hirofumi

2017-11-30

Nanostructured silicon (N-Si) was prepared by anodic electroetching of p-type silicon wafers. The obtained magnetic particles were separated by a permanent neodymium magnet as a magnetic nanostructured silicon (mN-Si). The N-Si and mN-Si exhibited different magnetic properties: the N-Si exhibited ferromagnetic-like behaviour, whereas the mN-Si exhibited superparamagnetic-like behaviour.

Effects of gold diffusion on n-type doping of GaAs nanowires.

PubMed

Tambe, Michael J; Ren, Shenqiang; Gradecak, Silvija

2010-11-10

The deposition of n-GaAs shells is explored as a method of n-type doping in GaAs nanowires grown by the Au-mediated metal-organic chemical vapor deposition. Core-shell GaAs/n-GaAs nanowires exhibit an unintended rectifying behavior that is attributed to the Au diffusion during the shell deposition based on studies using energy dispersive X-ray spectroscopy, current-voltage, capacitance-voltage, and Kelvin probe force measurements. Removing the gold prior to n-type shell deposition results in the realization of n-type GaAs nanowires without rectification. We directly correlate the presence of gold impurities to nanowire electrical properties and provide an insight into the role of seed particles on the properties of nanowires and nanowire heterostructures.

Length-dependent mechanical properties of gold nanowires

NASA Astrophysics Data System (ADS)

Han, Jing; Fang, Liang; Sun, Jiapeng; Han, Ying; Sun, Kun

2012-12-01

The well-known "size effect" is not only related to the diameter but also to the length of the small volume materials. It is unfortunate that the length effect on the mechanical behavior of nanowires is rarely explored in contrast to the intensive studies of the diameter effect. The present paper pays attention to the length-dependent mechanical properties of <111>-oriented single crystal gold nanowires employing the large-scale molecular dynamics simulation. It is discovered that the ultrashort Au nanowires exhibit a new deformation and failure regime-high elongation and high strength. The constrained dislocation nucleation and transient dislocation slipping are observed as the dominant mechanism for such unique combination of high strength and high elongation. A mechanical model based on image force theory is developed to provide an insight to dislocation nucleation and capture the yield strength and nucleation site of first partial dislocation indicated by simulation results. Increasing the length of the nanowires, the ductile-to-brittle transition is confirmed. And the new explanation is suggested in the predict model of this transition. Inspired by the superior properties, a new approach to strengthen and toughen nanowires-hard/soft/hard sandwich structured nanowires is suggested. A preliminary evidence from the molecular dynamics simulation corroborates the present opinion.

Silicon nanowire photodetectors made by metal-assisted chemical etching

NASA Astrophysics Data System (ADS)

Xu, Ying; Ni, Chuan; Sarangan, Andrew

2016-09-01

Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

Simple and advanced ferromagnet/molecule spinterfaces

NASA Astrophysics Data System (ADS)

Gruber, M.; Ibrahim, F.; Djedhloul, F.; Barraud, C.; Garreau, G.; Boukari, S.; Isshiki, H.; Joly, L.; Urbain, E.; Peter, M.; Studniarek, M.; Da Costa, V.; Jabbar, H.; Bulou, H.; Davesne, V.; Halisdemir, U.; Chen, J.; Xenioti, D.; Arabski, J.; Bouzehouane, K.; Deranlot, C.; Fusil, S.; Otero, E.; Choueikani, F.; Chen, K.; Ohresser, P.; Bertran, F.; Le Fèvre, P.; Taleb-Ibrahimi, A.; Wulfhekel, W.; Hajjar-Garreau, S.; Wetzel, P.; Seneor, P.; Mattana, R.; Petroff, F.; Scheurer, F.; Weber, W.; Alouani, M.; Beaurepaire, E.; Bowen, M.

2016-10-01

Spin-polarized charge transfer between a ferromagnet and a molecule can promote molecular ferromagnetism 1, 2 and hybridized interfacial states3, 4. Observations of high spin-polarization of Fermi level states at room temperature5 designate such interfaces as a very promising candidate toward achieving a highly spin-polarized, nanoscale current source at room temperature, when compared to other solutions such as half-metallic systems and solid-state tunnelling over the past decades. We will discuss three aspects of this research. 1) Does the ferromagnet/molecule interface, also called an organic spinterface, exhibit this high spin-polarization as a generic feature? Spin-polarized photoemission experiments reveal that a high spin-polarization of electronics states at the Fermi level also exist at the simple interface between ferromagnetic cobalt and amorphous carbon6. Furthermore, this effect is general to an array of ferromagnetic and molecular candidates7. 2) Integrating molecules with intrinsic properties (e.g. spin crossover molecules) into a spinterface toward enhanced functionality requires lowering the charge transfer onto the molecule8 while magnetizing it1,2. We propose to achieve this by utilizing interlayer exchange coupling within a more advanced organic spinterface architecture. We present results at room temperature across the fcc Co(001)/Cu/manganese phthalocyanine (MnPc) system9. 3) Finally, we discuss how the Co/MnPc spinterface's ferromagnetism stabilizes antiferromagnetic ordering at room temperature onto subsequent molecules away from the spinterface, which in turn can exchange bias the Co layer at low temperature10. Consequences include tunnelling anisotropic magnetoresistance across a CoPc tunnel barrier11. This augurs new possibilities to transmit spin information across organic semiconductors using spin flip excitations12.

Phosphorus-Rich Copper Phosphide Nanowires for Field-Effect Transistors and Lithium-Ion Batteries.

PubMed

Li, Guo-An; Wang, Chiu-Yen; Chang, Wei-Chung; Tuan, Hsing-Yu

2016-09-27

Phosphorus-rich transition metal phosphide CuP2 nanowires were synthesized with high quality and high yield (∼60%) via the supercritical fluid-liquid-solid (SFLS) growth at 410 °C and 10.2 MPa. The obtained CuP2 nanowires have a high aspect ratio and exhibit a single crystal structure of monoclinic CuP2 without any impurity phase. CuP2 nanowires have progressive improvement for semiconductors and energy storages compared with bulk CuP2. Being utilized for back-gate field effect transistor (FET) measurement, CuP2 nanowires possess a p-type behavior intrinsically with an on/off ratio larger than 10(4) and its single nanowire electrical transport property exhibits a hole mobility of 147 cm(2) V(-1) s(-1), representing the example of a CuP2 transistor. In addition, CuP2 nanowires can serve as an appealing anode material for a lithium-ion battery electrode. The discharge capacity remained at 945 mA h g(-1) after 100 cycles, showing a good capacity retention of 88% based on the first discharge capacity. Even at a high rate of 6 C, the electrode still exhibited an outstanding result with a capacity of ∼600 mA h g(-1). Ex-situ transmission electron microscopy and CV tests demonstrate that the stability of capacity retention and remarkable rate capability of the CuP2 nanowires electrode are attributed to the role of the metal phosphide conversion-type lithium storage mechanism. Finally, CuP2 nanowire anodes and LiFePO4 cathodes were assembled into pouch-type lithium batteries offering a capacity over 60 mA h. The full cell shows high capacity and stable capacity retention and can be used as an energy supply to operate electronic devices such as mobile phones and mini 4WD cars.

Growth Mechanism of Nanowires: Ternary Chalcogenides

NASA Technical Reports Server (NTRS)

Singh, N. B.; Coriell, S. R.; Hopkins, R. H.; Su, Ching Hua; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

2016-01-01

In the past two decades there has been a large rise in the investment and expectations for nanotechnology use. Almost every area of research has projected improvements in sensors, or even a promise for the emergence of some novel device technologies. For these applications major focuses of research are in the areas of nanoparticles and graphene. Although there are some near term applications with nanowires in photodetectors and other low light detectors, there are few papers on the growth mechanism and fabrication of nanowire-based devices. Semiconductor nanowires exhibit very favorable and promising optical properties, including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here an overview of the mechanism of nanowire growth from the melt, and some preliminary results for the thallium arsenic selenide material system. Thallium arsenic selenide (TAS) is a multifunctional material combining excellent acousto-optical, nonlinear and radiation detection properties. We observed that small units of (TAS) nanocubes arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. In some cases very long wires (less than mm) are formed. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places.

Dynamics of heavy carriers in the ferromagnetic superconductor UGe2

NASA Astrophysics Data System (ADS)

Storchak, V. G.; Brewer, J. H.; Eshchenko, D. G.; Mengyan, P. W.; Parfenov, O. E.; Tokmachev, A. M.

2018-04-01

Superconductivity and ferromagnetism in a number of uranium-based materials come from the same f-electrons with a relatively large effective mass, suggesting the presence of a band of heavy quasiparticles, whose nature is still a mystery. Here, UGe2 dynamics in both ferromagnetic and paramagnetic phases is studied employing high-field μ +SR spectroscopy. The spectra exhibit a doublet structure characteristic to formation of subnanometer-sized magnetic polarons. This model is thoroughly explored here and correlated with the unconventional physics of UGe2. The heavy-fermion behaviour is ascribed to magnetic polarons; when coherent they form a narrow band, thus reconciling heavy carriers with superconductivity and itinerant ferromagnetism.

In-situ magnetization/heating electron holography to study the magnetic ordering in arrays of nickel metallic nanowires

NASA Astrophysics Data System (ADS)

Ortega, Eduardo; Santiago, Ulises; Giuliani, Jason G.; Monton, Carlos; Ponce, Arturo

2018-05-01

Magnetic nanostructures of different size, shape, and composition possess a great potential to improve current technologies like data storage and electromagnetic sensing. In thin ferromagnetic nanowires, their magnetization behavior is dominated by the competition between magnetocrystalline anisotropy (related to the crystalline structure) and shape anisotropy. In this way electron diffraction methods like precession electron diffraction (PED) can be used to link the magnetic behavior observed by Electron Holography (EH) with its crystallinity. Using off-axis electron holography under Lorentz conditions, we can experimentally determine the magnetization distribution over neighboring nanostructures and their diamagnetic matrix. In the case of a single row of nickel nanowires within the alumina template, the thin TEM samples showed a dominant antiferromagnetic arrangement demonstrating long-range magnetostatic interactions playing a major role.

In-situ magnetization/heating electron holography to study the magnetic ordering in arrays of nickel metallic nanowires.

PubMed

Ortega, Eduardo; Santiago, Ulises; Giuliani, Jason G; Monton, Carlos; Ponce, Arturo

2018-05-01

Magnetic nanostructures of different size, shape, and composition possess a great potential to improve current technologies like data storage and electromagnetic sensing. In thin ferromagnetic nanowires, their magnetization behavior is dominated by the competition between magnetocrystalline anisotropy (related to the crystalline structure) and shape anisotropy. In this way electron diffraction methods like precession electron diffraction (PED) can be used to link the magnetic behavior observed by Electron Holography (EH) with its crystallinity. Using off-axis electron holography under Lorentz conditions, we can experimentally determine the magnetization distribution over neighboring nanostructures and their diamagnetic matrix. In the case of a single row of nickel nanowires within the alumina template, the thin TEM samples showed a dominant antiferromagnetic arrangement demonstrating long-range magnetostatic interactions playing a major role.

Conductive polymer nanowire gas sensor fabricated by nanoscale soft lithography.

PubMed

Tang, Ning; Jiang, Yang; Qu, Hemi; Duan, Xuexin

2017-12-01

Resistive devices composed of one-dimensional nanostructures are promising candidates for the next generation of gas sensors. However, the large-scale fabrication of nanowires is still challenging, which restricts the commercialization of such devices. Here, we report a highly efficient and facile approach to fabricating poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) nanowire chemiresistive gas sensors by nanoscale soft lithography. Well-defined sub-100 nm nanowires are fabricated on silicon substrate, which facilitates device integration. The nanowire chemiresistive gas sensor is demonstrated for NH 3 and NO 2 detection at room temperature and shows a limit of detection at ppb level, which is compatible with nanoscale PEDOT:PSS gas sensors fabricated with the conventional lithography technique. In comparison with PEDOT:PSS thin-film gas sensors, the nanowire gas sensor exhibits higher sensitivity and a much faster response to gas molecules.

Conductive polymer nanowire gas sensor fabricated by nanoscale soft lithography

NASA Astrophysics Data System (ADS)

Tang, Ning; Jiang, Yang; Qu, Hemi; Duan, Xuexin

2017-12-01

Resistive devices composed of one-dimensional nanostructures are promising candidates for the next generation of gas sensors. However, the large-scale fabrication of nanowires is still challenging, which restricts the commercialization of such devices. Here, we report a highly efficient and facile approach to fabricating poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) nanowire chemiresistive gas sensors by nanoscale soft lithography. Well-defined sub-100 nm nanowires are fabricated on silicon substrate, which facilitates device integration. The nanowire chemiresistive gas sensor is demonstrated for NH3 and NO2 detection at room temperature and shows a limit of detection at ppb level, which is compatible with nanoscale PEDOT:PSS gas sensors fabricated with the conventional lithography technique. In comparison with PEDOT:PSS thin-film gas sensors, the nanowire gas sensor exhibits higher sensitivity and a much faster response to gas molecules.

Magnetization reversal in ferromagnetic spirals via domain wall motion

NASA Astrophysics Data System (ADS)

Schumm, Ryan D.; Kunz, Andrew

2016-11-01

Domain wall dynamics have been investigated in a variety of ferromagnetic nanostructures for potential applications in logic, sensing, and recording. We present a combination of analytic and simulated results describing the reliable field driven motion of a domain wall through the arms of a ferromagnetic spiral nanowire. The spiral geometry is capable of taking advantage of the benefits of both straight and circular wires. Measurements of the in-plane components of the spirals' magnetization can be used to determine the angular location of the domain wall, impacting the magnetoresistive applications dependent on the domain wall location. The spirals' magnetization components are found to depend on the spiral parameters: the initial radius and spacing between spiral arms, along with the domain wall location. The magnetization is independent of the parameters of the rotating field used to move the domain wall, and therefore the model is valid for current induced domain wall motion as well. The speed of the domain wall is found to depend on the frequency of the rotating driving field, and the domain wall speeds can be reliably varied over several orders of magnitude. We further demonstrate a technique capable of injecting multiple domain walls and show the reliable and unidirectional motion of domain walls through the arms of the spiral.

Evaluating focused ion beam patterning for position-controlled nanowire growth using computer vision

NASA Astrophysics Data System (ADS)

Mosberg, A. B.; Myklebost, S.; Ren, D.; Weman, H.; Fimland, B. O.; van Helvoort, A. T. J.

2017-09-01

To efficiently evaluate the novel approach of focused ion beam (FIB) direct patterning of substrates for nanowire growth, a reference matrix of hole arrays has been used to study the effect of ion fluence and hole diameter on nanowire growth. Self-catalyzed GaAsSb nanowires were grown using molecular beam epitaxy and studied by scanning electron microscopy (SEM). To ensure an objective analysis, SEM images were analyzed with computer vision to automatically identify nanowires and characterize each array. It is shown that FIB milling parameters can be used to control the nanowire growth. Lower ion fluence and smaller diameter holes result in a higher yield (up to 83%) of single vertical nanowires, while higher fluence and hole diameter exhibit a regime of multiple nanowires. The catalyst size distribution and placement uniformity of vertical nanowires is best for low-value parameter combinations, indicating how to improve the FIB parameters for positioned-controlled nanowire growth.

Spatial distribution of defect luminescence in GaN nanowires.

PubMed

Li, Qiming; Wang, George T

2010-05-12

The spatial distribution of defect-related and band-edge luminescence from GaN nanowires grown by metal-organic chemical vapor deposition was studied by spatially resolved cathodoluminescence imaging and spectroscopy. A surface layer exhibiting strong yellow luminescence (YL) near 566 nm in the nanowires was revealed, compared to weak YL in the bulk. In contrast, other defect-related luminescence near 428 nm (blue luminescence) and 734 nm (red luminescence), in addition to band-edge luminescence (BEL) at 366 nm, were observed in the bulk of the nanowires but were largely absent at the surface. As the nanowire width approaches a critical dimension, the surface YL layer completely quenches the BEL. The surface YL is attributed to the diffusion and piling up of mobile point defects, likely isolated gallium vacancies, at the surface during growth.

Superconducting nanowires as nonlinear inductive elements for qubits

NASA Astrophysics Data System (ADS)

Ku, Jaseung; Manucharyan, Vladimir; Bezryadin, Alexey

2011-03-01

We report microwave transmission measurements of superconducting Fabry-Perot resonators, having a superconducting nanowire placed at a supercurrent antinode. As the plasma oscillation is excited, the supercurrent is forced to flow through the nanowire. The microwave transmission of the resonator-nanowire device shows a nonlinear resonance behavior, significantly dependent on the amplitude of the supercurrent oscillation. We show that such amplitude-dependent response is due to the nonlinearity of the current-phase relationship of the nanowire. The results are explained within a nonlinear oscillator model of the Duffing oscillator, in which the nanowire acts as a purely inductive element, in the limit of low temperatures and low amplitudes. The low-quality factor sample exhibits a ``crater'' at the resonance peak at higher driving power, which is due to dissipation. We observe a hysteretic bifurcation behavior of the transmission response to frequency sweep in a sample with a higher quality factor. The Duffing model is used to explain the Duffing bistability diagram. NSF DMR-1005645, DOE DO-FG02-07ER46453.

Room Temperature Ferromagnetic Mn:Ge(001).

PubMed

Lungu, George Adrian; Stoflea, Laura Elena; Tanase, Liviu Cristian; Bucur, Ioana Cristina; Răduţoiu, Nicoleta; Vasiliu, Florin; Mercioniu, Ionel; Kuncser, Victor; Teodorescu, Cristian-Mihail

2013-12-27

We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001), heated at relatively high temperature (starting with 250 °C). The samples were characterized by low energy electron diffraction (LEED), scanning tunneling microscopy (STM), high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), superconducting quantum interference device (SQUID), and magneto-optical Kerr effect (MOKE). Samples deposited at relatively elevated temperature (350 °C) exhibited the formation of ~5-8 nm diameter Mn₅Ge₃ and Mn 11 Ge₈ agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe ~2.5 phase, or manganese diluted into the Ge(001) crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm) deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge-Ge dimers on Ge(001). The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed.

Si nanowires/Cu nanowires bilayer fabric as a lithium ion capacitor anode with excellent performance

NASA Astrophysics Data System (ADS)

Lai, Chien-Ming; Kao, Tzu-Lun; Tuan, Hsing-Yu

2018-03-01

A light and binder-free bilayer fabric electrode composed of silicon nanowires and copper nanowires for lithium-ion capacitors (LICs) is reported. A lithium ion capacitor is proposed employing pre-lithiated silicon/copper nanowire fabric and activated carbon as the anode and the cathode, respectively. These LICs show remarkable performance with a specific capacitance of 156 F g-1 at 0.1 A g-1, which is approximately twice of that of activated carbon in electric double-layer capacitors (EDLCs), and still exhibit a fine specific capacitance of 68 F g-1 even at a high current density of 20 A g-1. At a low power density of 193 W kg-1, the Si/Cu fabric//AC LIC can achieve high energy density of 210 W h kg-1. As the power density is increased to 99 kW kg-1, the energy density still remains at 43 W h kg-1, showing the prominent rate performance.

Mechanical Failure Mode of Metal Nanowires: Global Deformation versus Local Deformation

PubMed Central

Ho, Duc Tam; Im, Youngtae; Kwon, Soon-Yong; Earmme, Youn Young; Kim, Sung Youb

2015-01-01

It is believed that the failure mode of metal nanowires under tensile loading is the result of the nucleation and propagation of dislocations. Such failure modes can be slip, partial slip or twinning and therefore they are regarded as local deformation. Here we provide numerical and theoretical evidences to show that global deformation is another predominant failure mode of nanowires under tensile loading. At the global deformation mode, nanowires fail with a large contraction along a lateral direction and a large expansion along the other lateral direction. In addition, there is a competition between global and local deformations. Nanowires loaded at low temperature exhibit global failure mode first and then local deformation follows later. We show that the global deformation originates from the intrinsic instability of the nanowires and that temperature is a main parameter that decides the global or local deformation as the failure mode of nanowires. PMID:26087445

Electrodeposition at room temperature of amorphous silicon and germanium nanowires in ionic liquid

NASA Astrophysics Data System (ADS)

Martineau, F.; Namur, K.; Mallet, J.; Delavoie, F.; Endres, F.; Troyon, M.; Molinari, M.

2009-11-01

The electrodeposition at room temperature of silicon and germanium nanowires from the air- and water-stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide (P1,4) containing SiCl4 as Si source or GeCl4 as Ge source is investigated by cyclic voltammetry. By using nanoporous polycarbonate membranes as templates, it is possible to reproducibly grow pure silicon and germanium nanowires of different diameters. The nanowires are composed of pure amorphous silicon or germanium. The nanowires have homogeneous cylindrical shape with a roughness of a few nanometres on the wire surfaces. The nanowires' diameters and lengths well match with the initial membrane characteristics. Preliminary photoluminescence experiments exhibit strong emission in the near infrared for the amorphous silicon nanowires.

Intrinsic Defect Ferromagnetism: The case of Hafnium Oxide

NASA Astrophysics Data System (ADS)

Das Pemmaraju, Chaitanya

2005-03-01

In view of the recent experimental reports of intrinsic ferromagnetism in Hafnium Oxide (HfO2) thin film systems ootnotetextM. Venkatesan, C. B. Fitzgerald, J. M. D. Coey Nature 430, 630 (2004) Brief Communications, we carried out first principles investigations to look for magnetic structure in HfO2 possibly brought about by the presence of small concentrations of intrinsic point defects. Ab initio electronic structure calculations using Density Functional Theory (DFT) show that isolated cation vacancy sites in HfO2 lead to the formation of high spin defect states which couple ferromagnetically to each other. Interestingly, these high spin states are observed in the low symmetry monoclinic and tetragonal phases while the highly symmetric cubic flourite phase exhibits a non-magnetic ground state. Detailed studies of the electronic structure of cation vacancies in the three crystalline phases of Hafnia show that symmetry leading to orbitally degenerate defect levels is not a pre-requsite for ferromagnetism and that the interplay between Kinetic, Coulomb and Exchange energy together with favourable coupling to the Crystalline environment can lead to high spin ferromagnetic ground states even in extreme low symmetry systems like monoclinic HfO2. These findings open up a much wider class of systems to the possibility of intrinsic defect ferromagnetism.

Ballistic anisotropic magnetoresistance in core-shell nanowires and rolled-up nanotubes

NASA Astrophysics Data System (ADS)

Chang, Ching-Hao; Ortix, Carmine

2017-01-01

In ferromagnetic nanostructures, the ballistic anisotropic magnetoresistance (BAMR) is a change in the ballistic conductance with the direction of magnetization due to spin-orbit interaction. Very recently, a directional dependent ballistic conductance has been predicted to occur in a number of newly synthesized nonmagnetic semiconducting nanostructures subject to externally applied magnetic fields, without necessitating spin-orbit coupling. In this paper, we review past works on the prediction of this BAMR effect in core-shell nanowires (CSN) and rolled-up nanotubes (RUNTs). This is complemented by new results, we establish for the transport properties of tubular nanosystems subject to external magnetic fields.

Ferromagnetism in sphalerite and wurtzite CdS nanostructures

PubMed Central

2013-01-01

Room-temperature ferromagnetism is observed in undoped sphalerite and wurtzite CdS nanostructures which are synthesized by hydrothermal methods. Scanning electron microscopy and transmission electron microscopy results indicate that the sphalerite CdS samples show a spherical-like shape and the wurtzite CdS ones show a flower-like shape, both of which are aggregated by lots of smaller particles. The impurity of the samples has been ruled out by the results of X-ray diffraction, selected-area electron diffraction, and X-ray photoelectron spectroscopy. Magnetization measurements indicate that all the samples exhibit room-temperature ferromagnetism and the saturation magnetization decreases with the increased crystal sizes, revealing that the observed ferromagnetism is defect-related, which is also confirmed by the post-annealing processes. This finding in CdS should be the focus of future electronic and spintronic devices. PMID:23294671

Understanding the true shape of Au-catalyzed GaAs nanowires.

PubMed

Jiang, Nian; Wong-Leung, Jennifer; Joyce, Hannah J; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati

2014-10-08

With increasing interest in nanowire-based devices, a thorough understanding of the nanowire shape is required to gain tight control of the quality of nanowire heterostructures and improve the performance of related devices. We present a systematic study of the sidewalls of Au-catalyzed GaAs nanowires by investigating the faceting process from the beginning with vapor-liquid-solid (VLS) nucleation, followed by the simultaneous radial growth on the sidewalls, and to the end with sidewall transformation during annealing. The VLS nucleation interface of our GaAs nanowires is revealed by examining cross sections of the nanowire, where the nanowire exhibits a Reuleaux triangular shape with three curved surfaces along {112}A. These curved surfaces are not thermodynamically stable and adopt {112}A facets during radial growth. We observe clear differences in radial growth rate between the ⟨112⟩A and ⟨112⟩B directions with {112}B facets forming due to the slower radial growth rate along ⟨112⟩B directions. These sidewalls transform to {110} facets after high temperature (>500 °C) annealing. A nucleation model is proposed to explain the origin of the Reuleaux triangular shape of the nanowires, and the sidewall evolution is explained by surface kinetic and thermodynamic limitations.

Au-induced deep groove nanowire structure on the Ge(001) surface: DFT calculations

NASA Astrophysics Data System (ADS)

Tsay, Shiow-Fon

2016-09-01

The atomic geometry, stability, and electronic properties of self-organized Au induced nanowires on the Ge(001) surface are investigated based on the density-functional theory in GGA and the stoichiometry of Au. A giant Ge zigzag chain structure is suggested for 0.75 ML Au coverage, which displays c(8 × 2) deep groove zigzag nanowire structure simulated STM images. The top layer Ge and Au atomic disorder introduces the chevron units into the zigzag nanowire structure STM image as per the experimental observations. The zigzag Ge nanowire exhibits a semi-metallic characteristic, and the electric transport occurs in between the Ge zigzag nanowire and the subsurface. The system exhibits obvious electronic correlations among the Ge nanowire, the nano-facet Au trimers and the deeper layer Ge atoms, that play an important role in the electronic structure. At surface Brillouin zone boundaries, an anisotropic two-dimensional upward parabolic surface-state band is consistent with the ARPES spectra reported by Nakatsuji et al. [Phys. Rev. B 80, 081406(R) (2009); Phys. Rev. B 84, 115411 (2011)]; this electronic structure is different from the quasi-one-dimensional energy trough reported by Schäfer et al. [Phys. Rev. Lett. 101, 236802 (2008); Phys. Rev. B 83, 121411(R) (2011)].

Lasing in robust cesium lead halide perovskite nanowires

PubMed Central

Eaton, Samuel W.; Lai, Minliang; Gibson, Natalie A.; Wong, Andrew B.; Dou, Letian; Ma, Jie; Wang, Lin-Wang; Leone, Stephen R.; Yang, Peidong

2016-01-01

The rapidly growing field of nanoscale lasers can be advanced through the discovery of new, tunable light sources. The emission wavelength tunability demonstrated in perovskite materials is an attractive property for nanoscale lasers. Whereas organic–inorganic lead halide perovskite materials are known for their instability, cesium lead halides offer a robust alternative without sacrificing emission tunability or ease of synthesis. Here, we report the low-temperature, solution-phase growth of cesium lead halide nanowires exhibiting low-threshold lasing and high stability. The as-grown nanowires are single crystalline with well-formed facets, and act as high-quality laser cavities. The nanowires display excellent stability while stored and handled under ambient conditions over the course of weeks. Upon optical excitation, Fabry–Pérot lasing occurs in CsPbBr3 nanowires with an onset of 5 μJ cm−2 with the nanowire cavity displaying a maximum quality factor of 1,009 ± 5. Lasing under constant, pulsed excitation can be maintained for over 1 h, the equivalent of 109 excitation cycles, and lasing persists upon exposure to ambient atmosphere. Wavelength tunability in the green and blue regions of the spectrum in conjunction with excellent stability makes these nanowire lasers attractive for device fabrication. PMID:26862172

Lasing in robust cesium lead halide perovskite nanowires

DOE PAGES

Eaton, Samuel W.; Lai, Minliang; Gibson, Natalie A.; ...

2016-02-09

The rapidly growing field of nanoscale lasers can be advanced through the discovery of new, tunable light sources. The emission wavelength tunability demonstrated in perovskite materials is an attractive property for nanoscale lasers. Whereas organic-inorganic lead halide perovskite materials are known for their instability, cesium lead halides offer a robust alternative without sacrificing emission tunability or ease of synthesis. Here, we report the low-temperature, solution-phase growth of cesium lead halide nanowires exhibiting low-threshold lasing and high stability. The as-grown nanowires are single crystalline with well-formed facets, and act as high-quality laser cavities. The nanowires display excellent stability while stored andmore » handled under ambient conditions over the course of weeks. Upon optical excitation, Fabry-Pérot lasing occurs in CsPbBr 3 nanowires with an onset of 5 μJ cm -2 with the nanowire cavity displaying a maximum quality factor of 1,009 ± 5. Lasing under constant, pulsed excitation can be maintained for over 1 h, the equivalent of 10 9 excitation cycles, and lasing persists upon exposure to ambient atmosphere. Wavelength tunability in the green and blue regions of the spectrum in conjunction with excellent stability makes these nanowire lasers attractive for device fabrication.« less

Ferromagnetic order in epitaxially strained LaCoO3 thin films

NASA Astrophysics Data System (ADS)

Fuchs, D.; Pinta, C.; Schwarz, T.; Schweiss, P.; Nagel, P.; Schuppler, S.; Schneider, R.; Merz, M.; Roth, G.; v. Löhneysen, H.

2007-04-01

LaCoO3 films grown epitaxially on ⟨001⟩ oriented (LaAlO3)0.3(Sr2AlTaO6)0.7 substrates by pulsed laser deposition exhibit ferromagnetic ordering below a critical temperature, Tc , of 85K . Polycrystalline films of LaCoO3 prepared in the same way did not show ferromagnetic order down to T≈5K , and their temperature dependent susceptibility was identical to that of bulk LaCoO3 . The ferromagnetism in epitaxial films is not simply a property of the surface region, rather it extends over the complete film thickness, as shown by the linear increase of the saturated magnetic moment with increasing film thickness. We discuss this surprising result in terms of epitaxial tensile strain via the properly chosen substrate inducing ferromagnetic order.

Analysis of magic lengths in growth of supported metallic nanowires

NASA Astrophysics Data System (ADS)

Han, Yong

2014-12-01

Metallic nanowires can exhibit fascinating physical properties. These unique properties often originate primarily from the quantum confinement of free electrons in a potential well, while electron-electron interactions do not play a decisive role. A recent experimental study shows that self-assembled Ir nanowires grown on Ge(001) surface have a strong length preference: the nanowire lengths are an integer multiple of 4.8 nm. In this paper, a free-electron-gas model for geometries corresponding to the nanowires is used to analyze the selection of these preferred or magic lengths. The model shows that the inclusion of even numbers of free electrons in an Ir nanowire produces these magic lengths once an electron spillage effect is taken into account. The model also shows that the stability of the nanowire diminishes with its increasing length, and consequently suggests why no long nanowires are observed in experiments. It is also shown that applying generic results for quantum size effects in a nanofilm geometry is not adequate to accurately describe the length selection in the rather different nanowire geometry, where the transverse dimensions are smaller than the electron Fermi wavelength. Finally, monatomic Au chain growth on Ge(001) surface is also analyzed. In contrast to Ir nanowires, the model shows that the stability of an Au chain depends strongly on the extent of electron spillage.

The effect of crystal structure on the electromechanical properties of piezoelectric Nylon-11 nanowires.

PubMed

Choi, Yeon Sik; Kim, Sung Kyun; Williams, Findlay; Calahorra, Yonatan; Elliott, James A; Kar-Narayan, Sohini

2018-06-19

Crystal structure is crucial in determining the properties of piezoelectric polymers, particularly at the nanoscale where precise control of the crystalline phase is possible. Here, we investigate the electromechanical properties of three distinct crystalline phases of Nylon-11 nanowires using advanced scanning probe microscopy techniques. Stiff α-phase nanowires exhibited a low piezoelectric response, while relatively soft δ'-phase nanowires displayed an enhanced piezoelectric response.

Random crystal field effect on the magnetic and hysteresis behaviors of a spin-1 cylindrical nanowire

NASA Astrophysics Data System (ADS)

Zaim, N.; Zaim, A.; Kerouad, M.

2017-02-01

In this work, the magnetic behavior of the cylindrical nanowire, consisting of a ferromagnetic core of spin-1 atoms surrounded by a ferromagnetic shell of spin-1 atoms is studied in the presence of a random crystal field interaction. Based on Metropolis algorithm, the Monte Carlo simulation has been used to investigate the effects of the concentration of the random crystal field p, the crystal field D and the shell exchange interaction Js on the phase diagrams and the hysteresis behavior of the system. Some characteristic behaviors have been found, such as the first and second-order phase transitions joined by tricritical point for appropriate values of the system parameters, triple and isolated critical points can be also found. Depending on the Hamiltonian parameters, single, double and para hysteresis regions are explicitly determined.

Trajectory and chirality of vortex domain walls in ferromagnetic nanowires with an asymmetric Y-branch

NASA Astrophysics Data System (ADS)

Brandão, J.; Mello, A.; Garcia, F.; Sampaio, L. C.

2017-03-01

The motion and trajectory of vortex domain walls (VDWs) driven by magnetic field were investigated in Fe80Ni20 nanowires with an asymmetric Y-shape branch. By using the focused magneto-optical Kerr effect, we have probed the injection, pinning, and propagation of VDWs in the branch and in the wire beyond the branch entrance. Hysteresis cycles measured at these points show 3 and 4 jumps in the magnetization reversal, respectively. Micromagnetic simulations were carried out to obtain the number of jumps in the hysteresis cycles, and the magnetization process involved in each jump. Based on simulations and from the size of the jumps in the measured hysteresis cycles, one obtains the histogram of the domain wall type probability. While in the branch domain walls of different types are equiprobable, in the nanowire vortex domain walls with counter clockwise and clockwise chiralities and transverse-down domain walls are measured with probabilities of 65%, 25%, and 10%, respectively. These results provide an additional route to select the trajectory and chirality of VDWs in magnetic nanostructures.

Locality and rapidity of the ultra-large elastic deformation of Nb nanowires in a NiTi phase-transforming matrix

DOE PAGES

Wang, Shan; Cui, Lishan; Hao, Shijie; ...

2014-10-24

This study investigated the elastic deformation behaviour of Nb nanowires embedded in a NiTi matrix. The Nb nanowires exhibited an ultra-large elastic deformation, which is found to be dictated by the martensitic transformation of the NiTi matrix, thus exhibiting unique characteristics of locality and rapidity. These are in clear contrast to our conventional observation of elastic deformations of crystalline solids, which is a homogeneous lattice distortion with a strain rate controlled by the applied strain. The Nb nanowires are also found to exhibit elastic-plastic deformation accompanying the martensitic transformation of the NiTi matrix in the case when the transformation strainmore » of the matrix over-matches the elastic strain limit of the nanowires, or exhibit only elastic deformation in the case of under-matching. Such insight provides an important opportunity for elastic strain engineering and composite design.« less

Ferroelectric-ferromagnetic multilayers: A magnetoelectric heterostructure with high output charge signal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prokhorenko, S.; Kohlstedt, H.; Pertsev, N. A., E-mail: pertsev.domain@mail.ioffe.ru

2014-09-21

Multiferroic composites and heterostructures comprising ferroelectric and ferromagnetic materials exhibit room-temperature magnetoelectric (ME) effects greatly exceeding those of single-phase magnetoelectrics known to date. Since these effects are mediated by the interfacial coupling between ferroic constituents, the ME responses may be enhanced by increasing the density of interfaces and improving their quality. A promising material system providing these features is a ferroelectric-ferromagnetic multilayer with epitaxial interfaces. In this paper, we describe theoretically the strain-mediated direct ME effect exhibited by free-standing multilayers composed of single-crystalline ferroelectric nanolayers interleaved by conducting ferromagnetic slabs. Using a nonlinear thermodynamic approach allowing for specific mechanical boundarymore » conditions of the problem, we first calculate the polarization states and dielectric properties of ferroelectric nanolayers in dependence on the lattice mismatch between ferroic constituents and their volume fractions. In these calculations, the ferromagnetic component is described by a model which combines linear elastic behavior with magnetic-field-dependent lattice parameters. Then the quasistatic ME polarization and voltage coefficients are evaluated using the theoretical strain sensitivity of ferroelectric polarization and measured effective piezomagnetic coefficients of ferromagnets. For Pb(Zr₀.₅Ti₀.₅)O₃-FeGaB and BaTiO₃-FeGaB multilayers, the ME coefficients are calculated numerically as a function of the FeGaB volume fraction and used to evaluate the output charge and voltage signals. It is shown that the multilayer geometry of a ferroelectric-ferromagnetic nanocomposite opens the way for a drastic enhancement of the output charge signal. This feature makes biferroic multilayers advantageous for the development of ultrasensitive magnetic-field sensors for technical and biomedical applications.« less

Nanoscale Electronic Conditioning for Improvement of Nanowire Light-Emitting-Diode Efficiency.

PubMed

May, Brelon J; Belz, Matthew R; Ahamed, Arshad; Sarwar, A T M G; Selcu, Camelia M; Myers, Roberto C

2018-04-24

Commercial III-Nitride LEDs and lasers spanning visible and ultraviolet wavelengths are based on epitaxial films. Alternatively, nanowire-based III-Nitride optoelectronics offer the advantage of strain compliance and high crystalline quality growth on a variety of inexpensive substrates. However, nanowire LEDs exhibit an inherent property distribution, resulting in uneven current spreading through macroscopic devices that consist of millions of individual nanowire diodes connected in parallel. Despite being electrically connected, only a small fraction of nanowires, sometimes <1%, contribute to the electroluminescence (EL). Here, we show that a population of electrical shorts exists in the devices, consisting of a subset of low-resistance nanowires that pass a large portion of the total current in the ensemble devices. Burn-in electronic conditioning is performed by applying a short-term overload voltage; the nanoshorts experience very high current density, sufficient to render them open circuits, thereby forcing a new current path through more nanowire LEDs in an ensemble device. Current-voltage measurements of individual nanowires are acquired using conductive atomic force microscopy to observe the removal of nanoshorts using burn-in. In macroscopic devices, this results in a 33× increase in peak EL and reduced leakage current. Burn-in conditioning of nanowire ensembles therefore provides a straightforward method to mitigate nonuniformities inherent to nanowire devices.

Minimization of Ohmic losses for domain wall motion in ferromagnetic nanowires

NASA Astrophysics Data System (ADS)

Abanov, Artem; Tretiakov, Oleg; Liu, Yang

2011-03-01

We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows driving of the domain wall with higher speed without burning the wire. For any domain wall velocity we find the time-dependence of the current needed to minimize the Ohmic losses. Below a critical domain-wall velocity specified by the parameters of the wire the minimal Ohmic losses are achieved by dc current. Furthermore, we identify the wire parameters for which the losses reduction from its dc value is the most dramatic. This work was supported by the NSF Grant No. 0757992 and Welch Foundation (A-1678).

Electrolyte-gated transistors based on conducting polymer nanowire junction arrays.

PubMed

Alam, Maksudul M; Wang, Jun; Guo, Yaoyao; Lee, Stephanie P; Tseng, Hsian-Rong

2005-07-07

In this study, we describe the electrolyte gating and doping effects of transistors based on conducting polymer nanowire electrode junction arrays in buffered aqueous media. Conducting polymer nanowires including polyaniline, polypyrrole, and poly(ethylenedioxythiophene) were investigated. In the presence of a positive gate bias, the device exhibits a large on/off current ratio of 978 for polyaniline nanowire-based transistors; these values vary according to the acidity of the gate medium. We attribute these efficient electrolyte gating and doping effects to the electrochemically fabricated nanostructures of conducting polymer nanowires. This study demonstrates that two-terminal devices can be easily converted into three-terminal transistors by simply immersing the device into an electrolyte solution along with a gate electrode. Here, the field-induced modulation can be applied for signal amplification to enhance the device performance.

Room Temperature Ferromagnetic Mn:Ge(001)

PubMed Central

Lungu, George Adrian; Stoflea, Laura Elena; Tanase, Liviu Cristian; Bucur, Ioana Cristina; Răduţoiu, Nicoleta; Vasiliu, Florin; Mercioniu, Ionel; Kuncser, Victor; Teodorescu, Cristian-Mihail

2014-01-01

We report the synthesis of a room temperature ferromagnetic Mn-Ge system obtained by simple deposition of manganese on Ge(001), heated at relatively high temperature (starting with 250 °C). The samples were characterized by low energy electron diffraction (LEED), scanning tunneling microscopy (STM), high resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), superconducting quantum interference device (SQUID), and magneto-optical Kerr effect (MOKE). Samples deposited at relatively elevated temperature (350 °C) exhibited the formation of ~5–8 nm diameter Mn5Ge3 and Mn11Ge8 agglomerates by HRTEM, while XPS identified at least two Mn-containing phases: the agglomerates, together with a Ge-rich MnGe~2.5 phase, or manganese diluted into the Ge(001) crystal. LEED revealed the persistence of long range order after a relatively high amount of Mn (100 nm) deposited on the single crystal substrate. STM probed the existence of dimer rows on the surface, slightly elongated as compared with Ge–Ge dimers on Ge(001). The films exhibited a clear ferromagnetism at room temperature, opening the possibility of forming a magnetic phase behind a nearly ideally terminated Ge surface, which could find applications in integration of magnetic functionalities on semiconductor bases. SQUID probed the co-existence of a superparamagnetic phase, with one phase which may be attributed to a diluted magnetic semiconductor. The hypothesis that the room temperature ferromagnetic phase might be the one with manganese diluted into the Ge crystal is formulated and discussed. PMID:28788444

Ballistic Majorana nanowire devices

NASA Astrophysics Data System (ADS)

Gül, Ã.-nder; Zhang, Hao; Bommer, Jouri D. S.; de Moor, Michiel W. A.; Car, Diana; Plissard, Sébastien R.; Bakkers, Erik P. A. M.; Geresdi, Attila; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.

2018-01-01

Majorana modes are zero-energy excitations of a topological superconductor that exhibit non-Abelian statistics1-3. Following proposals for their detection in a semiconductor nanowire coupled to an s-wave superconductor4,5, several tunnelling experiments reported characteristic Majorana signatures6-11. Reducing disorder has been a prime challenge for these experiments because disorder can mimic the zero-energy signatures of Majoranas12-16, and renders the topological properties inaccessible17-20. Here, we show characteristic Majorana signatures in InSb nanowire devices exhibiting clear ballistic transport properties. Application of a magnetic field and spatial control of carrier density using local gates generates a zero bias peak that is rigid over a large region in the parameter space of chemical potential, Zeeman energy and tunnel barrier potential. The reduction of disorder allows us to resolve separate regions in the parameter space with and without a zero bias peak, indicating topologically distinct phases. These observations are consistent with the Majorana theory in a ballistic system21, and exclude the known alternative explanations that invoke disorder12-16 or a nonuniform chemical potential22,23.

Magnetic pinning in a superconducting film by a ferromagnetic layer with stripe domains

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mancusi, D.; Di Giorgio, C.; Bobba, F.

2014-10-31

A magnetic study of superconductor/ferromagnet bilayers was performed by hysteresis loops and temperature-dependent magnetization measurements. The superconductor/ferromagnet bilayers consist of a Nb film deposited on a Py film with weak perpendicular magnetic anisotropy. By comparing the temperature-dependent magnetization data obtained on samples with different ferromagnetic layer thickness, a decrease of the magnetic pinning with increasing thickness of the ferromagnetic layer has been found. This is confirmed by the reduction of the Nb film critical current density at low fields extracted by using the magnetic irreversibility of the hysteresis loops. As the ferromagnetic layer exhibits a magnetic structure with stripe domains,more » whose width increases for increasing thickness as observed by magnetic force microscopy (MFM) measurements, we relate the reduction of the superconducting critical current in samples with thicker ferromagnetic layers to a weaker interaction between the vortices guided by the underlying magnetic template.« less

EDITORIAL: Nanowires for energy Nanowires for energy

NASA Astrophysics Data System (ADS)

LaPierre, Ray; Sunkara, Mahendra

2012-05-01

This special issue of Nanotechnology focuses on studies illustrating the application of nanowires for energy including solar cells, efficient lighting and water splitting. Over the next three decades, nanotechnology will make significant contributions towards meeting the increased energy needs of the planet, now known as the TeraWatt challenge. Nanowires in particular are poised to contribute significantly in this development as presented in the review by Hiralal et al [1]. Nanowires exhibit light trapping properties that can act as a broadband anti-reflection coating to enhance the efficiency of solar cells. In this issue, Li et al [2] and Wang et al [3] present the optical properties of silicon nanowire and nanocone arrays. In addition to enhanced optical properties, core-shell nanowires also have the potential for efficient charge carrier collection across the nanowire diameter as presented in the contribution by Yu et al [4] for radial junction a-Si solar cells. Hybrid approaches that combine organic and inorganic materials also have potential for high efficiency photovoltaics. A Si-based hybrid solar cell is presented by Zhang et al [5] with a photoconversion efficiency of over 7%. The quintessential example of hybrid solar cells is the dye-sensitized solar cell (DSSC) where an organic absorber (dye) coats an inorganic material (typically a ZnO nanostructure). Herman et al [6] present a method of enhancing the efficiency of a DSSC by increasing the hetero-interfacial area with a unique hierarchical weeping willow ZnO structure. The increased surface area allows for higher dye loading, light harvesting, and reduced charge recombination through direct conduction along the ZnO branches. Another unique ZnO growth method is presented by Calestani et al [7] using a solution-free and catalyst-free approach by pulsed electron deposition (PED). Nanowires can also make more efficient use of electrical power. Light emitting diodes, for example, will eventually become the

Formation of tungsten oxide nanowires by ion irradiation and vacuum annealing

NASA Astrophysics Data System (ADS)

Zheng, Xu-Dong; Ren, Feng; Wu, Heng-Yi; Qin, Wen-Jing; Jiang, Chang-Zhong

2018-04-01

Here we reported the fabrication of tungsten oxide (WO3-x ) nanowires by Ar+ ion irradiation of WO3 thin films followed by annealing in vacuum. The nanowire length increases with increasing irradiation fluence and with decreasing ion energy. We propose that the stress-driven diffusion of the irradiation-induced W interstitial atoms is responsible for the formation of the nanowires. Comparing to the pristine film, the fabricated nanowire film shows a 106-fold enhancement in electrical conductivity, resulting from the high-density irradiation-induced vacancies on the oxygen sublattice. The nanostructure exhibits largely enhanced surface-enhanced Raman scattering effect due to the oxygen vacancy. Thus, ion irradiation provides a powerful approach for fabricating and tailoring the surface nanostructures of semiconductors.

Growth Evolution and Characterization of PLD Zn(Mg)O Nanowire Arrays

NASA Astrophysics Data System (ADS)

Rahm, Andreas; Nobis, Thomas; Lorenz, Michael; Zimmermann, Gregor; Boukos, Nikos; Travlos, Anastasios; Grundmann, Marius

ZnO and Zn0.98Mg0.02O nanowires have been grown by high-pressure pulsed laser deposition on sapphire substrates covered with gold colloidal particles as nucleation sites. We present a detailed study of the nanowire size and length distribution and of the growth evolution. We find that the aspect ratio varies linearly with deposition time. The linearity coefficient is independent of the catalytic gold particle size and lateral nanowire density. The superior structural quality of the whiskers is proven by X-ray diffraction and transmission electron microscopy. The defect-free ZnO nanowires exhibit a FWHM(2θ-ω) of the ZnO(0002) reflection of 22 arcsec. We show (0-11) step habit planes on the side faces of the nanowires that are a few atomic steps in height. The microscopic homogeneity of the optical properties is confirmed by temperature-dependent cathodoluminescence.

Prediction of a new class of half-metallic ferromagnets from first principles [A new class of half-metallic ferromagnets from first principles

DOE PAGES

Griffin, Sinead M.; Neaton, Jeffrey B.

2017-09-12

Half-metallic ferromagnetism (HMFM) occurs rarely in materials and yet offers great potential for spintronic devices. Recent experiments suggest a class of compounds with the `ThCrmore » $$_{2}$$Si$$_{2}$$' (122) structure -- isostructural and containing elements common with Fe pnictide-based superconductors -- can exhibit HMFM. Here we use $ab$ $initio$ density-functional theory calculations to understand the onset of half-metallicity in this family of materials and explain the appearance of ferromagnetism at a quantum critical point. We also predict new candidate materials with HMFM and high Curie temperatures through A-site alloying.« less

Detecting Airborne Mercury by Use of Gold Nanowires

NASA Technical Reports Server (NTRS)

Ryan, Margaret; Shevade, Abhijit; Kisor, Adam; Homer, Margie; Soler, Jessica; Mung, Nosang; Nix, Megan

2009-01-01

Like the palladium chloride (PdCl2) films described in the immediately preceding article, gold nanowire sensors have been found to be useful for detecting airborne elemental mercury at concentrations on the order of parts per billion (ppb). Also like the PdCl2 films, gold nanowire sensors can be regenerated under conditions much milder than those necessary for regeneration of gold films that have been used as airborne-Hg sensors. The interest in nanowire sensors in general is prompted by the expectation that nanowires of a given material covering a given surface may exhibit greater sensitivity than does a film of the same material because nanowires have a greater surface area. In preparation for experiments to demonstrate this sensor concept, sensors were fabricated by depositing gold nanowires, variously, on microhotplate or microarray sensor substrates. In the experiments, the electrical resistances were measured while the sensors were exposed to air at a temperature of 25 C and relative humidity of about 30 percent containing mercury at various concentrations from 2 to 70 ppb (see figure). The results of this and other experiments have been interpreted as signifying that sensors of this type can detect mercury at ppb concentrations in room-temperature air and can be regenerated by exposure to clean flowing air at temperatures <40 C.

Minimization of Ohmic Losses for Domain Wall Motion in a Ferromagnetic Nanowire

NASA Astrophysics Data System (ADS)

Tretiakov, O. A.; Liu, Y.; Abanov, Ar.

2010-11-01

We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows driving of the domain wall with higher speed without burning the wire. For any domain-wall velocity we find the time dependence of the current needed to minimize the Ohmic losses. Below a critical domain-wall velocity specified by the parameters of the wire the minimal Ohmic losses are achieved by dc current. Furthermore, we identify the wire parameters for which the losses reduction from its dc value is the most dramatic.

Synthesis and characterization of axial heterojunction inorganic-organic semiconductor nanowire arrays.

PubMed

Chen, Nan; Qian, Xuemin; Lin, Haowei; Liu, Huibiao; Li, Yongjun; Li, Yuliang

2011-11-07

The end-to-end P-N heterojunction nanowire arrays combined organic (poly[1,4-bis(pyrrol-2-yl)benzene], BPB) and inorganic (CdS) molecules have been successfully designed and fabricated. The electrical properties of P-N heterojunctions of organic-inorganic nanowire arrays were investigated. The diode nature and rectifying feature of P-N heterojunction nanowire arrays were observed. The rectification ratio of the diode increased from 29.9 to 129.7 as the illumination intensity increased. The material exhibits a new property, which is an improvement in the integration of the physical and chemical properties of the two independent components.

Stretchable Conductive Composites from Cu-Ag Nanowire Felt.

PubMed

Catenacci, Matthew J; Reyes, Christopher; Cruz, Mutya A; Wiley, Benjamin J

2018-04-24

Materials that retain a high conductivity under strain are essential for wearable electronics. This article describes a conductive, stretchable composite consisting of a Cu-Ag core-shell nanowire felt infiltrated with a silicone elastomer. This composite exhibits a retention of conductivity under strain that is superior to any composite with a conductivity greater than 1000 S cm -1 . This work also shows how the mechanical properties, conductivity, and deformation mechanism of the composite changes as a function of the stiffness of the silicone matrix. The retention of conductivity under strain was found to decrease as the Young's modulus of the matrix increased. This was attributed to void formation as a result of debonding between the nanowire felt and the elastomer. The nanowire composite was also patterned to create serpentine circuits with a stretchability of 300%.

Crystallographic alignment of high-density gallium nitride nanowire arrays.

PubMed

Kuykendall, Tevye; Pauzauskie, Peter J; Zhang, Yanfeng; Goldberger, Joshua; Sirbuly, Donald; Denlinger, Jonathan; Yang, Peidong

2004-08-01

Single-crystalline, one-dimensional semiconductor nanostructures are considered to be one of the critical building blocks for nanoscale optoelectronics. Elucidation of the vapour-liquid-solid growth mechanism has already enabled precise control over nanowire position and size, yet to date, no reports have demonstrated the ability to choose from different crystallographic growth directions of a nanowire array. Control over the nanowire growth direction is extremely desirable, in that anisotropic parameters such as thermal and electrical conductivity, index of refraction, piezoelectric polarization, and bandgap may be used to tune the physical properties of nanowires made from a given material. Here we demonstrate the use of metal-organic chemical vapour deposition (MOCVD) and appropriate substrate selection to control the crystallographic growth directions of high-density arrays of gallium nitride nanowires with distinct geometric and physical properties. Epitaxial growth of wurtzite gallium nitride on (100) gamma-LiAlO(2) and (111) MgO single-crystal substrates resulted in the selective growth of nanowires in the orthogonal [1\\[Evec]0] and [001] directions, exhibiting triangular and hexagonal cross-sections and drastically different optical emission. The MOCVD process is entirely compatible with the current GaN thin-film technology, which would lead to easy scale-up and device integration.

Nanowire-based detector

DOEpatents

Berggren, Karl K; Hu, Xiaolong; Masciarelli, Daniele

2014-06-24

Systems, articles, and methods are provided related to nanowire-based detectors, which can be used for light detection in, for example, single-photon detectors. In one aspect, a variety of detectors are provided, for example one including an electrically superconductive nanowire or nanowires constructed and arranged to interact with photons to produce a detectable signal. In another aspect, fabrication methods are provided, including techniques to precisely reproduce patterns in subsequently formed layers of material using a relatively small number of fabrication steps. By precisely reproducing patterns in multiple material layers, one can form electrically insulating materials and electrically conductive materials in shapes such that incoming photons are redirected toward a nearby electrically superconductive materials (e.g., electrically superconductive nanowire(s)). For example, one or more resonance structures (e.g., comprising an electrically insulating material), which can trap electromagnetic radiation within its boundaries, can be positioned proximate the nanowire(s). The resonance structure can include, at its boundaries, electrically conductive material positioned proximate the electrically superconductive nanowire such that light that would otherwise be transmitted through the sensor is redirected toward the nanowire(s) and detected. In addition, electrically conductive material can be positioned proximate the electrically superconductive nanowire (e.g. at the aperture of the resonant structure), such that light is directed by scattering from this structure into the nanowire.

Single-crystalline δ-Ni2Si nanowires with excellent physical properties

PubMed Central

2013-01-01

In this article, we report the synthesis of single-crystalline nickel silicide nanowires (NWs) via chemical vapor deposition method using NiCl2·6H2O as a single-source precursor. Various morphologies of δ-Ni2Si NWs were successfully acquired by controlling the growth conditions. The growth mechanism of the δ-Ni2Si NWs was thoroughly discussed and identified with microscopy studies. Field emission measurements show a low turn-on field (4.12 V/μm), and magnetic property measurements show a classic ferromagnetic characteristic, which demonstrates promising potential applications for field emitters, magnetic storage, and biological cell separation. PMID:23782805

Terahertz time-domain measurement of non-Drude conductivity in silver nanowire thin films for transparent electrode applications

NASA Astrophysics Data System (ADS)

Kim, Jaeseok; Maeng, Inhee; Jung, Jongwook; Song, Hyunjoon; Son, Joo-Hiuk; Kim, Kilsuk; Lee, Jaeik; Kim, Chul-Hong; Chae, Geesung; Jun, Myungchul; Hwang, YongKee; Jeong Lee, Su; Myoung, Jae-Min; Choi, Hyunyong

2013-01-01

We have investigated the complex conductivity of silver nanowire thin films using terahertz time-domain spectroscopy. Maxwell-Garnett effective medium theory, which accounts for the effective complex conductivity of silver nanowires, is presented in detail theoretically and experimentally. The conductivity of nanowires exhibits a characteristic non-Drude response in which the applied terahertz field is polarized in the longitudinal nanowire direction. The non-Drude responses of the silver nanowires are explained by the Gans approximation and the Drude-Smith model, and both agree well with the experimental data. Our results provide a basis for further explorations of charge carrier dynamics in nanowire-based transparent electrode applications.

Controlling bottom-up rapid growth of single crystalline gallium nitride nanowires on silicon.

PubMed

Wu, Ko-Li; Chou, Yi; Su, Chang-Chou; Yang, Chih-Chaing; Lee, Wei-I; Chou, Yi-Chia

2017-12-20

We report single crystalline gallium nitride nanowire growth from Ni and Ni-Au catalysts on silicon using hydride vapor phase epitaxy. The growth takes place rapidly; efficiency in time is higher than the conventional nanowire growth in metal-organic chemical vapor deposition and thin film growth in molecular beam epitaxy. The effects of V/III ratio and carrier gas flow on growth are discussed regarding surface polarity and sticking coefficient of molecules. The nanowires of gallium nitride exhibit excellent crystallinity with smooth and straight morphology and uniform orientation. The growth mechanism follows self-assembly from both catalysts, where Au acts as a protection from etching during growth enabling the growth of ultra-long nanowires. The photoluminescence of such nanowires are adjustable by tuning the growth parameters to achieve blue emission. The practical range of parameters for mass production of such high crystal quality and uniformity of nanowires is suggested.

Near-field interaction between domain walls in adjacent permalloy nanowires

NASA Astrophysics Data System (ADS)

O'Brien, Liam

2010-03-01

A domain wall (DW) moving in a ferromagnetic nanowire may interact with the stray field from another DW travelling in an adjacent wire. This could greatly impact the operation of proposed DW based data storage schemes which rely on the controlled propagation of DWs in densely packed nanowires [1, 2]. Here we experimentally study the interaction between two DWs travelling in adjacent Permalloy nanowires [3]. We find that the interaction causes significant pinning, with measured pinning fields of up to 93 Oe (˜5 times the intrinsic pinning field of an isolated wire) for the smallest separations. We present an analysis of the observed pinning field dependence on wire separation in terms of the full magnetostatic charge distribution within a DW. By considering an isolated DW, and accounting for finite temperature, it is possible to fully reproduce the experimentally observed dependence. This suggests that the DW internal structure is not appreciably perturbed by the interaction and so remains rigid, consistent with a finite sized quasi-particle description [4]. The full charge distribution must be considered in understanding these near-field interactions as other models based on simpler descriptions of the charge distribution within the DW, including a point-like distribution, cannot reproduce the observed dependence. Finally, we develop the idea of using localized stray fields to pin a DW and show how specific potential landscapes can be created by tailoring a pinning charge distribution, with the added advantage that neither DW internal structure nor nanowire geometry is appreciably perturbed. [4pt] [1] Allwood, Cowburn et al. Science 309, 1688 (2005) [0pt] [2] S. S. Parkin, Science 320, 190 (2008) [0pt] [3] O'Brien, Cowburn et al. Phys. Rev. Lett. 103, 7, 077206 (2009) [0pt] [4] Saitoh, Miyajima et al. Nature 432, 203 (2004)

Structural, electronic and magnetic properties of carbon doped boron nitride nanowire: Ab initio study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jalilian, Jaafar, E-mail: JaafarJalilian@gmail.com; Kanjouri, Faramarz, E-mail: kanjouri@khu.ac.ir

2016-11-15

Using spin-polarized density functional theory calculations, we demonstrated that carbon doped boron nitride nanowire (C-doped BNNW) has diverse electronic and magnetic properties depending on position of carbon atoms and their percentages. Our results show that only when one carbon atom is situated on the edge of the nanowire, C-doped BNNW is transformed into half-metal. The calculated electronic structure of the C-doped BNNW suggests that doping carbon can induce localized edge states around the Fermi level, and the interaction among localized edge states leads to semiconductor to half-metal transition. Overall, the bond reconstruction causes of appearance of different electronic behavior suchmore » as semiconducting, half-metallicity, nonmagnetic metallic, and ferromagnetic metallic characters. The formation energy of the system shows that when a C atom is doped on surface boron site, system is more stable than the other positions of carbon impurity. Our calculations show that C-doped BNNW may offer unique opportunities for developing nanoscale spintronic materials.« less

Mechanical behavior enhancement of ZnO nanowire by embedding different nanowires

NASA Astrophysics Data System (ADS)

Vazinishayan, Ali; Yang, Shuming; Lambada, Dasaradha Rao; Wang, Yiming

2018-06-01

In this work, we employed commercial finite element modeling (FEM) software package ABAQUS to analyze mechanical properties of ZnO nanowire before and after embedding with different kinds of nanowires, having different materials and cross-section models such as Au (circular), Ag (pentagonal) and Si (rectangular) using three point bending technique. The length and diameter of the ZnO nanowire were measured to be 12,280 nm and 103.2 nm, respectively. In addition, Au, Ag and Si nanowires were considered to have the length of 12,280 nm and the diameter of 27 nm. It was found that after embedding Si nanowire with rectangular cross-section into the ZnO nanowire, the distribution of Von Misses stresses criterion, displacement and strain were decreased than the other nanowires embedded. The highest stiffness, the elastic deformation and the high strength against brittle failure have been made by Si nanowire comparison to the Au and Ag nanowires, respectively.

An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band.

PubMed

Sadaf, S M; Zhao, S; Wu, Y; Ra, Y-H; Liu, X; Vanka, S; Mi, Z

2017-02-08

To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV) spectral range exhibit very low efficiency due to the presence of large densities of defects and extremely inefficient p-type conduction of conventional AlGaN quantum well heterostructures. We have demonstrated that such critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures. The core-shell nanowire arrays exhibit high photoluminescence efficiency (∼80%) in the UV-C band at room temperature. With the incorporation of an epitaxial Al tunnel junction, the p-(Al)GaN contact-free nanowire deep UV LEDs showed nearly one order of magnitude reduction in the device resistance, compared to the conventional nanowire p-i-n device. The unpackaged Al tunnel junction deep UV LEDs exhibit an output power >8 mW and a peak external quantum efficiency ∼0.4%, which are nearly one to two orders of magnitude higher than previously reported AlGaN nanowire devices. Detailed studies further suggest that the maximum achievable efficiency is limited by electron overflow and poor light extraction efficiency due to the TM polarized emission.

Metal-Insulator-Semiconductor Nanowire Network Solar Cells.

PubMed

Oener, Sebastian Z; van de Groep, Jorik; Macco, Bart; Bronsveld, Paula C P; Kessels, W M M; Polman, Albert; Garnett, Erik C

2016-06-08

Metal-insulator-semiconductor (MIS) junctions provide the charge separating properties of Schottky junctions while circumventing the direct and detrimental contact of the metal with the semiconductor. A passivating and tunnel dielectric is used as a separation layer to reduce carrier recombination and remove Fermi level pinning. When applied to solar cells, these junctions result in two main advantages over traditional p-n-junction solar cells: a highly simplified fabrication process and excellent passivation properties and hence high open-circuit voltages. However, one major drawback of metal-insulator-semiconductor solar cells is that a continuous metal layer is needed to form a junction at the surface of the silicon, which decreases the optical transmittance and hence short-circuit current density. The decrease of transmittance with increasing metal coverage, however, can be overcome by nanoscale structures. Nanowire networks exhibit precisely the properties that are required for MIS solar cells: closely spaced and conductive metal wires to induce an inversion layer for homogeneous charge carrier extraction and simultaneously a high optical transparency. We experimentally demonstrate the nanowire MIS concept by using it to make silicon solar cells with a measured energy conversion efficiency of 7% (∼11% after correction), an effective open-circuit voltage (Voc) of 560 mV and estimated short-circuit current density (Jsc) of 33 mA/cm(2). Furthermore, we show that the metal nanowire network can serve additionally as an etch mask to pattern inverted nanopyramids, decreasing the reflectivity substantially from 36% to ∼4%. Our extensive analysis points out a path toward nanowire based MIS solar cells that exhibit both high Voc and Jsc values.

The composition dependence of magnetic, electronic and optical properties of Mn-doped SixGe1-x nanowires

NASA Astrophysics Data System (ADS)

Wei, Jianglin; Lan, Mu; Zhang, Xi; Xiang, Gang

2017-07-01

Mn-doped SixGe1-x nanowires (NWs) with different Ge concentrations have been studied by first-principles calculations. It is found that the spin dependent energy bands of the NWs show rich variations both in bandgap width and type (from indirect to direct) as the Ge concentration changes. The Mn-doped SixGe1-x NWs exhibit half-metallic characteristics for all Ge concentrations, and the ground states of the NWs are found to be ferromagnetic (FM). The net magnetization mapping and spin density of states calculations reveal that Mn 3d electrons have a strong hybridization effect with nearest Ge 4p electrons, which results in the Ge’s nontrivial contribution to the magnetic moment of the NWs. Further magnon dispersion studies show that the magnetic order stability of the NWs is influenced by Ge concentrations. Finally, the dependence of the optical properties of the magnetic NWs on the Ge concentration is demonstrated. Our results suggest that Mn-doped SixGe1-x NWs may be useful in spintronic and optoelectronic devices.

Growth of catalyst-free high-quality ZnO nanowires by thermal evaporation under air ambient

PubMed Central

2012-01-01

ZnO nanowires have been successfully fabricated on Si substrate by simple thermal evaporation of Zn powder under air ambient without any catalyst. Morphology and structure analyses indicated that ZnO nanowires had high purity and perfect crystallinity. The diameter of ZnO nanowires was 40 to 100 nm, and the length was about several tens of micrometers. The prepared ZnO nanowires exhibited a hexagonal wurtzite crystal structure. The growth of the ZnO nanostructure was explained by the vapor-solid mechanism. The simplicity, low cost and fewer necessary apparatuses of the process would suit the high-throughput fabrication of ZnO nanowires. The ZnO nanowires fabricated on Si substrate are compatible with state-of-the-art semiconductor industry. They are expected to have potential applications in functional nanodevices. PMID:22502639

Photosensitization of ZnO nanowires with CdSe quantum dots for photovoltaic devices.

PubMed

Leschkies, Kurtis S; Divakar, Ramachandran; Basu, Joysurya; Enache-Pommer, Emil; Boercker, Janice E; Carter, C Barry; Kortshagen, Uwe R; Norris, David J; Aydil, Eray S

2007-06-01

We combine CdSe semiconductor nanocrystals (or quantum dots) and single-crystal ZnO nanowires to demonstrate a new type of quantum-dot-sensitized solar cell. An array of ZnO nanowires was grown vertically from a fluorine-doped tin oxide conducting substrate. CdSe quantum dots, capped with mercaptopropionic acid, were attached to the surface of the nanowires. When illuminated with visible light, the excited CdSe quantum dots injected electrons across the quantum dot-nanowire interface. The morphology of the nanowires then provided the photoinjected electrons with a direct electrical pathway to the photoanode. With a liquid electrolyte as the hole transport medium, quantum-dot-sensitized nanowire solar cells exhibited short-circuit currents ranging from 1 to 2 mA/cm2 and open-circuit voltages of 0.5-0.6 V when illuminated with 100 mW/cm2 simulated AM1.5 spectrum. Internal quantum efficiencies as high as 50-60% were also obtained.

Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

PubMed

Iqbal, Azhar; Beech, Jason P; Anttu, Nicklas; Pistol, Mats-Erik; Samuelson, Lars; Borgström, Magnus T; Yartsev, Arkady

2013-03-22

We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using TE-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.

Prediction of Intrinsic Ferromagnetic Ferroelectricity in a Transition-Metal Halide Monolayer

NASA Astrophysics Data System (ADS)

Huang, Chengxi; Du, Yongping; Wu, Haiping; Xiang, Hongjun; Deng, Kaiming; Kan, Erjun

2018-04-01

The realization of multiferroics in nanostructures, combined with a large electric dipole and ferromagnetic ordering, could lead to new applications, such as high-density multistate data storage. Although multiferroics have been broadly studied for decades, ferromagnetic ferroelectricity is rarely explored, especially in two-dimensional (2D) systems. Here we report the discovery of 2D ferromagnetic ferroelectricity in layered transition-metal halide systems. On the basis of first-principles calculations, we reveal that a charged CrBr3 monolayer exhibits in-plane multiferroicity, which is ensured by the combination of orbital and charge ordering as realized by the asymmetric Jahn-Teller distortions of octahedral Cr - Br6 units. As an example, we further show that (CrBr3)2Li is a ferromagnetic ferroelectric multiferroic. The explored phenomena and mechanism of multiferroics in this 2D system not only are useful for fundamental research in multiferroics but also enable a wide range of applications in nanodevices.

Prediction of Intrinsic Ferromagnetic Ferroelectricity in a Transition-Metal Halide Monolayer.

PubMed

Huang, Chengxi; Du, Yongping; Wu, Haiping; Xiang, Hongjun; Deng, Kaiming; Kan, Erjun

2018-04-06

The realization of multiferroics in nanostructures, combined with a large electric dipole and ferromagnetic ordering, could lead to new applications, such as high-density multistate data storage. Although multiferroics have been broadly studied for decades, ferromagnetic ferroelectricity is rarely explored, especially in two-dimensional (2D) systems. Here we report the discovery of 2D ferromagnetic ferroelectricity in layered transition-metal halide systems. On the basis of first-principles calculations, we reveal that a charged CrBr_{3} monolayer exhibits in-plane multiferroicity, which is ensured by the combination of orbital and charge ordering as realized by the asymmetric Jahn-Teller distortions of octahedral Cr─Br_{6} units. As an example, we further show that (CrBr_{3})_{2}Li is a ferromagnetic ferroelectric multiferroic. The explored phenomena and mechanism of multiferroics in this 2D system not only are useful for fundamental research in multiferroics but also enable a wide range of applications in nanodevices.

Coaxial group III-nitride nanowire photovoltaics.

PubMed

Dong, Yajie; Tian, Bozhi; Kempa, Thomas J; Lieber, Charles M

2009-05-01

Coaxial core/shell nanowires represent an important class of nanoscale building blocks with substantial potential for exploring new concepts and materials for solar energy conversion. Here, we report the first experimental realization of coaxial group III-nitride nanowire photovoltaic (PV) devices, n-GaN/i-In(x)Ga(1-x)N/p-GaN, where variation of indium mole fraction is used to control the active layer band gap and hence light absorption. Current-voltage data reveal clear diode characteristics with ideality factors from 3.9 to 5.6. Electroluminescence measurements demonstrate tunable emission from 556 to 371 nm and thus confirm band gap variations in the In(x)Ga(1-x)N active layer from 2.25 to 3.34 eV as In composition is varied. Simulated one-sun AM 1.5G illumination yielded open-circuit voltages (V(oc)) from 1.0 to 2.0 V and short-circuit current densities (J(sc)) from 0.39 to 0.059 mA/cm(2) as In composition is decreased from 0.27 to 0 and a maximum efficiency of approximately 0.19%. The n-GaN/i-In(x)Ga(1-x)N/p-GaN nanowire devices are highly robust and exhibit enhanced efficiencies for concentrated solar light illuminations as well as single nanowire J(sc) values as high as 390 mA/cm(2) under intense short-wavelength illumination. The ability to rationally tune the structure and composition of these core/shell III-nitride nanowires will make them a powerful platform for exploring nanoenabled PVs in the future.

Controlled synthesis of MnOOH multilayer nanowires as anode materials for lithium-ion batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Yue; Yue, Kaiqiang; Wang, Yuanxin

MnOOH multilayer nanowires have been successfully synthesized by a hydrothermal method. It is found that the uniform multilayer structure of nanowires ran through the entire nanowire, which is formed via a layer by layer. The electrochemical properties of MnOOH multilayer nanowires as an anode material for Li-ion batteries (LIB) were investigated, and excellent capacity retention, superior cycling performance, and high rate capability were achieved. Specifically, the reversible capacity of MnOOH multilayer nanowires is 521 mAh/g after 500 cycles at 0.1 C, with excellent electrochemical stability. The multilayer nanowire electrodes exhibit short electron path lengths, high internal dislocation densities and largemore » surface to volume ratio, resulting in increased specific capacity, cycling stability and rate performance in the energy storage devices, which serves as an indication of their potential application in LIBs. - Highlights: •MnOOH multilayer nanowires were synthesized by a hydrothermal method. •The uniform multilayer structure of nanowires was formed via layer by layer. •The reversible capacity of product shows 521 mAh/g after 500 cycles at 0.1 C. •MnOOH multilayer nanowires showed higher property as anode material in LIB.« less

MnO 2 nanotube and nanowire arrays by electrochemical deposition for supercapacitors

NASA Astrophysics Data System (ADS)

Xia, Hui; Feng, Jinkui; Wang, Hailong; Lai, Man On; Lu, Li

Highly ordered MnO 2 nanotube and nanowire arrays are successfully synthesized via a electrochemical deposition technique using porous alumina templates. The morphologies and microstructures of the MnO 2 nanotube and nanowire arrays are investigated by field emission scanning electron microscopy and transmission electron microscopy. Electrochemical characterization demonstrates that the MnO 2 nanotube array electrode has superior capacitive behaviour to that of the MnO 2 nanowire array electrode. In addition to high specific capacitance, the MnO 2 nanotube array electrode also exhibits good rate capability and good cycling stability, which makes it promising candidate for supercapacitors.

A facile route to ultra-long polyaniline nanowires and the fabrication of photoswitch.

PubMed

Wang, Xiuhua; Shao, Mingwang; Shao, Guang; Wu, Zhengcui; Wang, Shaowu

2009-04-01

Ultra-long polyaniline nanowires with an average diameter of 60 nm and length up to tens of micrometers were successfully synthesized via chemical oxidation polymerization in an aqueous solution. These nanowires exhibited reversible electrochemical behavior judged from cyclic voltammetry curves. The excellent photosensitivity and photoresponse of a bundle of nanowires were also investigated, which showed that the photocurrent enhanced by ca. 4 times under irradiation of an incandescence lamp (12 V, 10 W). This work might be useful in the fabrication of photosensor and photoswitch nanodevices in the future.

Electrical and Optical Characterization of Nanowire based Semiconductor Devices

NASA Astrophysics Data System (ADS)

Ayvazian, Talin

This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand and optimize the electrical and optical properties of two types of nanoscale devices; in first type lithographically patterned nanowire electrodeposition (LPNE) method has been utilized to fabricate nanowire field effect transistors (NWFET) and second type involved the development of light emitting semiconductor nanowire arrays (NWLED). Field effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrode- position (LPNE) process on SiO2 /Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C x 4 h either with or without exposure to CdCl 2 in methanol a grain growth promoter. The influence of CdCl2 treatment was to increase the mean grain diameter as determined by X-ray diffraction pattern and to convert the crystal structure from cubic to wurtzite. Transfer characteristics showed an increase of the field effect mobility (mu eff) by an order of magnitude and increase of the Ion/I off ratio by a factor of 3-4. Light emitting devices (NW-LED) based on lithographically patterned pc-CdSe nanowire arrays have been investigated. Electroluminescence (EL) spectra of CdSe nanowires under various biases exhibited broad emission spectra centered at 750 nm close to the band gap of CdSe (1.7eV). To enhance the intensity of the emitted light and the external quantum efficiency (EQE), the distance between the contacts were reduced from 5 mum to less than 1 mum which increased the efficiency by an order of magnitude. Also, increasing the annealing temperature of nanowires from 300 °C x4 h to 450 This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand

Investigation of Room temperature Ferromagnetism in Mn doped Ge

NASA Astrophysics Data System (ADS)

Colakerol Arslan, Leyla; Toydemir, Burcu; Onel, Aykut Can; Ertas, Merve; Doganay, Hatice; Gebze Inst of Tech Collaboration; Research Center Julich Collaboration

2014-03-01

We present a systematic investigation of structural, magnetic and electronic properties of MnxGe1 -x single crystals. MnxGe1-x films were grown by sequential deposition of Ge and Mn by molecular-beam epitaxy at low substrate temperatures in order to avoid precipitation of ferromagnetic Ge-Mn intermetallic compounds. Reflected high energy electron diffraction and x-ray diffraction observations revealed that films are epitaxially grown on Si (001) substrates from the initial stage without any other phase formation. Magnetic measurements carried out using a physical property measurement system showed that all samples exhibited ferromagnetism at room temperature. Electron spin resonance indicates the presence of magnetically ordered localized spins of divalent Mn ions. X-ray absorption measurements at the Mn L-edge confirm significant substitutional doping of Mn into Ge-sites. The ferromagnetism was mainly induced by Mn substitution for Ge site, and indirect exchange interaction of these magnetic ions with the intrinsic charge carriers is the origin of ferromagnetism. The magnetic interactions were better understood by codoping with nonmagnetic impurities. This work was supported by Marie-Curie Reintegration Grant (PIRG08-GA-2010-276973).

Fabrication and ferromagnetism of Si-SiGe/MnGe core-shell nanopillars.

PubMed

Wang, Liming; Liu, Tao; Wang, Shuguang; Zhong, Zhenyang; Jia, Quanjie; Jiang, Zuimin

2016-10-07

Si-Si0.5Ge0.5/Mn0.08Ge0.92 core-shell nanopillar samples were fabricated on ordered Si nanopillar patterned substrates by molecular beam epitaxy at low temperatures. The magnetic properties of the samples are found to depend heavily on the growth temperature of the MnGe layer. The sample grown at a moderate temperature of 300 °C has the highest Curie temperature of 240 K as well as the strongest ferromagnetic signals. On the basis of the microstructural results, the ferromagnetic properties of the samples are believed to come from the intrinsic Mn-doped amorphous or crystalline Ge ferromagnetic phase rather than any intermetallic ferromagnetic compounds of Mn and Ge. After being annealed at a temperature of 500 °C, all the samples exhibit the same Curie temperature of 220 K, which is in sharp contrast to the different Curie temperature for the as-grown samples, and the ferromagnetism for the annealed samples comes from Mn5GeSi2 compounds which are formed during the annealing.

Local electronic structure and ferromagnetic interaction in La(Co,Ni)O3

NASA Astrophysics Data System (ADS)

Schuppler, S.; Nagel, P.; Fuchs, D.; Löhneysen, H. V.; Merz, M.; Huang, M.-J.

Perovskite-related transition-metal oxides exhibit properties ranging from insulating to superconducting as well as unusual magnetic phases, and cobaltates, in particular, have been known for their propensity for spin-state transitions. Nonmagnetic LaCoO3 and paramagnetic LaNiO3 are parent compounds for the La(Co1-xNix) O3 (LCNO) family, which, for intermediate Ni content x, exhibits ferromagnetism. The local electronic structure and the ferromagnetic interaction in LCNO have been studied by x-ray absorption (XAS) and x-ray magnetic circular dichroism (XMCD). XAS indicates a mixed-valence state for both Co and Ni, with both valences changing systematically with increasing x. Simultaneously, a spin-state redistribution towards HS (Co site) and LS (Ni site) occurs, and temperature-dependent spin-state transitions are increasingly suppressed. XMCD identifies the element-specific contributions to the magnetic moment and interactions. A simple model based on a double-exchange-like mechanism between Co3+ HS and Ni3+HS can qualitatively account for the evolution of ferromagnetism in the LCNO series.

GaN Nanowire MOSFET with Near-Ideal Subthreshold Slope.

PubMed

Li, Wenjun; Brubaker, Matt D; Spann, Bryan T; Bertness, Kris A; Fay, Patrick

2018-02-01

Wrap-around gate GaN nanowire MOSFETs using Al 2 O 3 as gate oxide have been experimentally demonstrated. The fabricated devices exhibit a minimum subthreshold slope of 60 mV/dec, an average subthreshold slope of 68 mV/dec over three decades of drain current, drain-induced barrier lowering of 27 mV/V, an on-current of 42 μA/μm (normalized by nanowire circumference), on/off ratio over 10 8 , an intrinsic transconductance of 27.8 μS/μm, for a switching efficiency figure of merit, Q=g m /SS of 0.41 μS/μm-dec/mV. These performance metrics make GaN nanowire MOSFETs a promising candidate for emerging low-power applications such as sensors and RF for the internet of things.

Nanowires of metal (Cd, Cu) halide complexes with 8-hydroxyquinoline for photoelectrochemical and electrochemiluminescence sensing

NASA Astrophysics Data System (ADS)

Huang, Shan; Pang, Guangming; Li, Xiangkui; Li, Jianping; Pan, Hongcheng

2017-12-01

Metal-hydroxyquinoline-halogen (MqX, M = Cd, Cu; q = 8-hydroxyquinoline; X = Cl, Br, I) nanowires are synthesized via a sonochemical-assisted method. The elemental analysis (EA), inductively coupled plasma-optical emission spectroscopy (ICP-AES), and X-ray photoelectron spectroscopy (XPS) support an M/q/X ratio of 1:1:1. The electron microscope images reveal a typical CdqX and CuqX nanowire diameter of 30-50 nm and a nanowire length of 400-600 nm. In addition, the synthesis of the MqX nanowires is only observed when there is an excess of halide ions (X/q molar ratio of 3 or greater). This halide deficiency results in the formation of micrometer-sized Mq2 sheets. We demonstrated the conversion of the MqX nanowires to Mq2 micro-sheets in an ultrasonic bath of 1 M 8-Hq ethanol solutions (50%, w/ w) at 50 °C for 2 h, but not vice versa. The MqX nanowires exhibited excellent properties for photoluminescence, electrochemiluminescence (ECL), and photoelectrochemistry (PEC). The CdqBr and CdqI nanowires were coated onto a glass carbon and a fluorine-doped tin oxide glass electrode to develop the above ECL and PEC methods for the detection of H2O2 and Cu2+, respectively. In the range of 2 to 14 μM, the ECL intensity of the CdqBr nanowires was inversely proportional to the concentration of H2O2 with a detection limit of 0.26 μM. For Cu2+ sensing, the photocurrent of the CdqI nanowires exhibited a linear response to Cu2+ over the range of 2 to 16 μM of which a detection limit of 0.2 μM was observed.

Integrated Nanoscale Nanowire Correlated Electronic Nanosensing Technology (INNOCENT)

DTIC Science & Technology

2006-06-01

out by characterizing the response of a 7 device to two different but structurally similar viruses, paramyxovirus and influenza A using nanowire devices...modified with antibodies specific for influenza A. Delivery of a solution containing paramyxovirus exhibited only short duration conductance changes

Investigation of growth parameters influence on self-catalyzed ITO nanowires by high RF-power sputtering.

PubMed

Li, Qiang; Zhang, Yuantao; Feng, Lungang; Wang, Zuming; Wang, Tao; Yun, Feng

2018-02-15

ITO nanowires have been successfully fabricated using a radio-frequency sputtering technique with a high RF-power of 250W. The fabrication of the ITO nanowires has been optimized through the study of oxygen flow rates, temperatures and RF-power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target has been first observed and the mechanism for the difference has been discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method has demonstrated good conductivity (15Ω/sq) and a transmittance of more than 64% at a wavelength longer than 550nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices. © 2018 IOP Publishing Ltd.

Epitaxial-Growth-Induced Junction Welding of Silver Nanowire Network Electrodes.

PubMed

Kang, Hyungseok; Song, Sol-Ji; Sul, Young Eun; An, Byeong-Seon; Yin, Zhenxing; Choi, Yongsuk; Pu, Lyongsun; Yang, Cheol-Woong; Kim, Youn Sang; Cho, Sung Min; Kim, Jung-Gu; Cho, Jeong Ho

2018-05-22

In this study, we developed a roll-to-roll Ag electroplating process for metallic nanowire electrodes using a galvanostatic mode. Electroplating is a low-cost and facile method for deposition of metal onto a target surface with precise control of both the composition and the thickness. Metallic nanowire networks [silver nanowires (AgNWs) and copper nanowires (CuNWs)] coated onto a polyethylene terephthalate (PET) film were immersed directly in an electroplating bath containing AgNO 3 . Solvated silver ions (Ag + ions) were deposited onto the nanowire surface through application of a constant current via an external circuit between the nanowire networks (cathode) and a Ag plate (anode). The amount of electroplated Ag was systematically controlled by changing both the applied current density and the electroplating time, which enabled precise control of the sheet resistance and optical transmittance of the metallic nanowire networks. The optimized Ag-electroplated AgNW (Ag-AgNW) films exhibited a sheet resistance of ∼19 Ω/sq at an optical transmittance of 90% (550 nm). A transmission electron microscopy study confirmed that Ag grew epitaxially on the AgNW surface, but a polycrystalline Ag structure was formed on the CuNW surface. The Ag-electroplated metallic nanowire electrodes were successfully applied to various electronic devices such as organic light-emitting diodes, triboelectric nanogenerators, and a resistive touch panel. The proposed roll-to-roll Ag electroplating process provides a simple, low-cost, and scalable method for the fabrication of enhanced transparent conductive electrode materials for next-generation electronic devices.

Vertical architecture for enhancement mode power transistors based on GaN nanowires

NASA Astrophysics Data System (ADS)

Yu, F.; Rümmler, D.; Hartmann, J.; Caccamo, L.; Schimpke, T.; Strassburg, M.; Gad, A. E.; Bakin, A.; Wehmann, H.-H.; Witzigmann, B.; Wasisto, H. S.; Waag, A.

2016-05-01

The demonstration of vertical GaN wrap-around gated field-effect transistors using GaN nanowires is reported. The nanowires with smooth a-plane sidewalls have hexagonal geometry made by top-down etching. A 7-nanowire transistor exhibits enhancement mode operation with threshold voltage of 1.2 V, on/off current ratio as high as 108, and subthreshold slope as small as 68 mV/dec. Although there is space charge limited current behavior at small source-drain voltages (Vds), the drain current (Id) and transconductance (gm) reach up to 314 mA/mm and 125 mS/mm, respectively, when normalized with hexagonal nanowire circumference. The measured breakdown voltage is around 140 V. This vertical approach provides a way to next-generation GaN-based power devices.

Dealloying of gold–copper alloy nanowires: From hillocks to ring-shaped nanopores

PubMed Central

Chauvin, Adrien; Delacôte, Cyril; Boujtita, Mohammed; Angleraud, Benoit; Ding, Junjun; Choi, Chang-Hwan; Tessier, Pierre-Yves

2016-01-01

Summary We report on a novel fabrication approach of metal nanowires with complex surface. Taking advantage of nodular growth triggered by the presence of surface defects created intentionally on the substrate as well as the high tilt angle between the magnetron source axis and the normal to the substrate, metal nanowires containing hillocks emerging out of the surface can be created. The approach is demonstrated for several metals and alloys including gold, copper, silver, gold–copper and gold–silver. We demonstrate that applying an electrochemical dealloying process to the gold–copper alloy nanowire arrays allows for transforming the hillocks into ring-like shaped nanopores. The resulting porous gold nanowires exhibit a very high roughness and high specific surface making of them a promising candidate for the development of SERS-based sensors. PMID:27826510

Switching by Domain-Wall Automotion in Asymmetric Ferromagnetic Rings

NASA Astrophysics Data System (ADS)

Mawass, Mohamad-Assaad; Richter, Kornel; Bisig, Andre; Reeve, Robert M.; Krüger, Benjamin; Weigand, Markus; Stoll, Hermann; Krone, Andrea; Kronast, Florian; Schütz, Gisela; Kläui, Mathias

2017-04-01

Spintronic applications based on magnetic domain-wall (DW) motion, such as magnetic data storage, sensors, and logic devices, require approaches to reliably manipulate the magnetization in nanowires. In this paper, we report the direct dynamic experimental visualization of reliable switching from the onion to the vortex state by DW automotion at zero field in asymmetric ferromagnetic rings using a uniaxial field pulse. Employing time-resolved x-ray microscopy, we demonstrate that depending on the detailed spin structure of the DWs and the size and geometry of the rings, the automotive propagation can be tailored during the DW relaxation from the higher-energy onion state to the energetically favored vortex state, where both DWs annihilate. Our measurements show DW automotion with an average velocity of about 60 m /s , which is a significant speed for spintronic devices. Such motion is mostly governed by local forces resulting from the geometry variations in the device. A closer study of the annihilation process via micromagnetic simulations reveals that a new vortex is nucleated in between the two initial walls. We demonstrate that the annihilation of DWs through automotion in our scheme always occurs with the detailed topological nature of the walls influencing only the DW dynamics on a local scale. The simulations show good quantitative agreement with our experimental results. These findings shed light on a robust and reliable switching process of the onion state in ferromagnetic rings, which paves the way for further optimization of these devices.

Magnetic-optical bifunctional CoPt3/Co multilayered nanowire arrays

NASA Astrophysics Data System (ADS)

Su, Yi-Kun; Yan, Zhi-Long; Wu, Xi-Ming; Liu, Huan; Ren, Xiao; Yang, Hai-Tao

2015-10-01

CoPt3/Co multilayered nanowire (NW) arrays are synthesized by pulsed electrodeposition into nanoporous anodic aluminum oxide (AAO) templates. The electrochemistry deposition parameters are determined by cyclic voltammetry to realize the well control of the ratio of Co to Pt and the length of every segment. The x-ray diffraction (XRD) patterns show that both Co and CoPt3 NWs exhibit face-centered cubic (fcc) structures. In the UV-visible absorption spectra, CoPt3/Co NW arrays show a red-shift with respect to pure CoPt3NWs. Compared with the pure Co nanowire arrays, the CoPt3/Co multilayered nanowire arrays show a weak shape anisotropy and well-modulated magnetic properties. CoPt3/Co multilayered nanowires are highly encouraging that new families of bimetallic nanosystems may be developed to meet the needs of nanomaterials in emerging multifunctional nanotechnologies. Project supported by the National Natural Science Foundation of China (Grant Nos. 51472165, 51471185, and 11274370).

Monolithically Integrated Metal/Semiconductor Tunnel Junction Nanowire Light-Emitting Diodes.

PubMed

Sadaf, S M; Ra, Y H; Szkopek, T; Mi, Z

2016-02-10

We have demonstrated for the first time an n(++)-GaN/Al/p(++)-GaN backward diode, wherein an epitaxial Al layer serves as the tunnel junction. The resulting p-contact free InGaN/GaN nanowire light-emitting diodes (LEDs) exhibited a low turn-on voltage (∼2.9 V), reduced resistance, and enhanced power, compared to nanowire LEDs without the use of Al tunnel junction or with the incorporation of an n(++)-GaN/p(++)-GaN tunnel junction. This unique Al tunnel junction overcomes some of the critical issues related to conventional GaN-based tunnel junction designs, including stress relaxation, wide depletion region, and light absorption, and holds tremendous promise for realizing low-resistivity, high-brightness III-nitride nanowire LEDs in the visible and deep ultraviolet spectral range. Moreover, the demonstration of monolithic integration of metal and semiconductor nanowire heterojunctions provides a seamless platform for realizing a broad range of multifunctional nanoscale electronic and photonic devices.

Peptide–Nanowire Hybrid Materials for Selective Sensing of Small Molecules

PubMed Central

McAlpine, Michael C.; Agnew, Heather D.; Rohde, Rosemary D.; Blanco, Mario; Ahmad, Habib; Stuparu, Andreea D.; Goddard, William A.

2013-01-01

The development of a miniaturized sensing platform for the selective detection of chemical odorants could stimulate exciting scientific and technological opportunities. Oligopeptides are robust substrates for the selective recognition of a variety of chemical and biological species. Likewise, semiconducting nanowires are extremely sensitive gas sensors. Here we explore the possibilities and chemistries of linking peptides to silicon nanowire sensors for the selective detection of small molecules. The silica surface of the nanowires is passivated with peptides using amide coupling chemistry. The peptide/nanowire sensors can be designed, through the peptide sequence, to exhibit orthogonal responses to acetic acid and ammonia vapors, and can detect traces of these gases from “chemically camouflaged” mixtures. Through both theory and experiment, we find that this sensing selectivity arises from both acid/base reactivity and from molecular structure. These results provide a model platform for what can be achieved in terms of selective and sensitive “electronic noses.” PMID:18576642

Carrier-Controlled Ferromagnetism in SrTiO 3

DOE PAGES

Moetakef, Pouya; Williams, James R.; Ouellette, Daniel G.; ...

2012-06-27

Magnetotransport and superconducting properties are investigated for uniformly La-doped SrTiO 3 films and GdTiO 3/SrTiO 3 heterostructures, respectively. GdTiO 3/SrTiO 3 interfaces exhibit a high-density 2D electron gas on the SrTiO 3 side of the interface, while, for the SrTiO 3 films, carriers are provided by the dopant atoms. Both types of samples exhibit ferromagnetism at low temperatures, as evidenced by a hysteresis in the magnetoresistance. For the uniformly doped SrTiO 3 films, the Curie temperature is found to increase with doping and to coexist with superconductivity for carrier concentrations on the high-density side of the superconducting dome. The Curiemore » temperature of the GdTiO 3/SrTiO 3 heterostructures scales with the thickness of the SrTiO 3 quantum well. The results are used to construct a stability diagram for the ferromagnetic and superconducting phases of SrTiO 3.« less

Origin of negative resistivity slope in U-based ferromagnets

NASA Astrophysics Data System (ADS)

Havela, L.; Paukov, M.; Buturlim, V.; Tkach, I.; Mašková, S.; Dopita, M.

2018-05-01

Ultra-nanocrystalline UH3-based ferromagnets with TC ≈ 200 K exhibit a flat temperature dependence of electrical resistivity with a negative slope both in the ferromagnetic and paramagnetic range. The ordered state with randomness on atomic scale, equivalent to a non-collinear ferromagnetism, can be affected by magnetic field, supressing the static magnetic disorder, which reduces the resistivity and removes the negative slope. It is deduced that the dynamic magnetic disorder in the paramagnetic state can be conceived as continuation of the static disorder in the ordered state. The experiments, performed for (UH3)0.78Mo0.12Ti0.10, demonstrate that the negative resistivity slope, observed for numerous U-based intermetallics in the paramagnetic state, can be due to the strong disorder effect on resistivity. The resulting weak localization, as a quantum interference effect which increases resistivity, is gradually suppressed by enhanced temperature, contributing by electron-phonon scattering, inelastic in nature and removing the quantum coherence.

Ferromagnetic resonance in a topographically modulated permalloy film

NASA Astrophysics Data System (ADS)

Sklenar, J.; Tucciarone, P.; Lee, R. J.; Tice, D.; Chang, R. P. H.; Lee, S. J.; Nevirkovets, I. P.; Heinonen, O.; Ketterson, J. B.

2015-04-01

A major focus within the field of magnonics involves the manipulation and control of spin-wave modes. This is usually done by patterning continuous soft magnetic films. Here, we report on work in which we use topographic modifications of a continuous magnetic thin film, rather than lithographic patterning techniques, to modify the ferromagnetic resonance spectrum. To demonstrate this technique we have performed in-plane, broadband, ferromagnetic resonance studies on a 100-nm-thick permalloy film sputtered onto a colloidal crystal with individual sphere diameters of 200 nm. Effects resulting from the, ideally, sixfold-symmetric underlying colloidal crystal were studied as a function of the in-plane field angle through experiment and micromagnetic modeling. Experimentally, we find two primary modes; the ratio of the intensities of these two modes exhibits a sixfold dependence. Detailed micromagnetic modeling shows that both modes are quasiuniform and nodeless in the unit cell but that they reside in different demagnetized regions of the unit cell. Our results demonstrate that topographic modification of magnetic thin films opens additional directions for manipulating ferromagnetic resonant excitations.

Polymer-electrolyte-gated nanowire synaptic transistors for neuromorphic applications

NASA Astrophysics Data System (ADS)

Zou, Can; Sun, Jia; Gou, Guangyang; Kong, Ling-An; Qian, Chuan; Dai, Guozhang; Yang, Junliang; Guo, Guang-hua

2017-09-01

Polymer-electrolytes are formed by dissolving a salt in polymer instead of water, the conducting mechanism involves the segmental motion-assisted diffusion of ion in the polymer matrix. Here, we report on the fabrication of tin oxide (SnO2) nanowire synaptic transistors using polymer-electrolyte gating. A thin layer of poly(ethylene oxide) and lithium perchlorate (PEO/LiClO4) was deposited on top of the devices, which was used to boost device performances. A voltage spike applied on the in-plane gate attracts ions toward the polymer-electrolyte/SnO2 nanowire interface and the ions are gradually returned after the pulse is removed, which can induce a dynamic excitatory postsynaptic current in the nanowire channel. The SnO2 synaptic transistors exhibit the behavior of short-term plasticity like the paired-pulse facilitation and self-adaptation, which is related to the electric double-effect regulation. In addition, the synaptic logic functions and the logical function transformation are also discussed. Such single SnO2 nanowire-based synaptic transistors are of great importance for future neuromorphic devices.

Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance.

PubMed

Zhang, Kai; Ding, Jia; Lou, Zheng; Chai, Ruiqing; Zhong, Mianzeng; Shen, Guozhen

2017-10-19

Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh I on /I off ratio of 4.91 × 10 3 , a high photoconductive gain of 1.10 × 10 3 , a high detectivity of 1.65 × 10 13 Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm -2 ). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.

Performance improvement of miniaturized ZnO nanowire accelerometer fabricated by refresh hydrothermal synthesis

PubMed Central

Song, Sangho; Kim, Hyun Chan; Kim, Jung Woong; Kim, Debora

2017-01-01

Miniaturized accelerometers are necessary for evaluating the performance of small devices, such as haptics, robotics and simulators. In this study, we fabricated miniaturized accelerometers using well-aligned ZnO nanowires. The layer of ZnO nanowires is used for active piezoelectric layer of the accelerometer, and copper was chosen as a head mass. Seedless and refresh hydrothermal synthesis methods were conducted to grow ZnO nanowires on the copper substrate and the effect of ZnO nanowire length on the accelerometer performance was investigated. The refresh hydrothermal synthesis exhibits longer ZnO nanowires, 12 µm, than the seedless hydrothermal synthesis, 6 µm. Performance of the fabricated accelerometers was verified by comparing with a commercial accelerometer. The sensitivity of the fabricated accelerometer by the refresh hydrothermal synthesis is shown to be 37.7 pA g−1, which is about 30 times larger than the previous result. PMID:28989760

Bi nanowire-based thermal biosensor for the detection of salivary cortisol using the Thomson effect

NASA Astrophysics Data System (ADS)

Lee, Seunghyun; Hyun Lee, Jung; Kim, MinGin; Kim, Jeongmin; Song, Min-Jung; Jung, Hyo-Il; Lee, Wooyoung

2013-09-01

We present a study of a thermal biosensor based on bismuth nanowire that is fabricated for the detection of the human stress hormone cortisol using the Thomson effect. The Bi nanowire was grown using the On-Film Formation of Nanowires (OFF-ON) method. The thermal device was fabricated using photolithography, and the sensing area was modified with immobilized anti-cortisol antibodies conjugated with protein G for the detection of cortisol. The voltages were measured with two probe tips during surface modification to investigate the biochemical reactions in the fabricated thermal biosensor. The Bi nanowire-based thermal biosensor exhibited low detection limit and good selectivity for the detection of cortisol.

Fully Tunable Silicon Nanowire Arrays Fabricated by Soft Nanoparticle Templating.

PubMed

Rey, By Marcel; Elnathan, Roey; Ditcovski, Ran; Geisel, Karen; Zanini, Michele; Fernandez-Rodriguez, Miguel-Angel; Naik, Vikrant V; Frutiger, Andreas; Richtering, Walter; Ellenbogen, Tal; Voelcker, Nicolas H; Isa, Lucio

2016-01-13

We demonstrate a fabrication breakthrough to produce large-area arrays of vertically aligned silicon nanowires (VA-SiNWs) with full tunability of the geometry of the single nanowires and of the whole array, paving the way toward advanced programmable designs of nanowire platforms. At the core of our fabrication route, termed "Soft Nanoparticle Templating", is the conversion of gradually compressed self-assembled monolayers of soft nanoparticles (microgels) at a water-oil interface into customized lithographical masks to create VA-SiNW arrays by means of metal-assisted chemical etching (MACE). This combination of bottom-up and top-down techniques affords excellent control of nanowire etching site locations, enabling independent control of nanowire spacing, diameter and height in a single fabrication route. We demonstrate the fabrication of centimeter-scale two-dimensional gradient photonic crystals exhibiting continuously varying structural colors across the entire visible spectrum on a single silicon substrate, and the formation of tunable optical cavities supported by the VA-SiNWs, as unambiguously demonstrated through numerical simulations. Finally, Soft Nanoparticle Templating is combined with optical lithography to create hierarchical and programmable VA-SiNW patterns.

High-performance supercapacitors of Cu-based porous coordination polymer nanowires and the derived porous CuO nanotubes.

PubMed

Wu, Meng-Ke; Zhou, Jiao-Jiao; Yi, Fei-Yan; Chen, Chen; Li, Yan-Li; Li, Qin; Tao, Kai; Han, Lei

2017-12-12

Electrode materials for supercapacitors with one-dimensional porous nanostructures, such as nanowires and nanotubes, are very attractive for high-efficiency storage of electrochemical energy. Herein, ultralong Cu-based porous coordination polymer nanowires (copper-l-aspartic acid) were used as the electrode material for supercapacitors, for the first time. The as-prepared material exhibits a high specific capacitance of 367 F g -1 at 0.6 A g -1 and excellent cycling stability (94% retention over 1000 cycles). Moreover, porous CuO nanotubes were successfully fabricated by the thermal decomposition of this nanowire precursor. The CuO nanotube exhibits good electrochemical performance with high rate capacity (77% retention at 12.5 A g -1 ) and long-term stability (96% retention over 1000 cycles). The strategy developed here for the synthesis of porous nanowires and nanotubes can be extended to the construction of other electrode materials for more efficient energy storage.

A unique substituted Co(II)-formate coordination framework exhibits weak ferromagnetic single-chain-magnet like behavior.

PubMed

Zhao, Jiong-Peng; Yang, Qian; Liu, Zhong-Yi; Zhao, Ran; Hu, Bo-Wen; Du, Miao; Chang, Ze; Bu, Xian-He

2012-07-04

A magnetic isolated chain-based substituted cobalt-formate framework was obtained with isonicotine as a spacer. In the chain, canted antiferromagnetic interactions exist in between the Co(II) ions, and slow magnetic relaxation is detected at low temperature. For the block effects of the isonicotine ligands, the complex could be considered as a peculiar example of a weak ferromagnetic single-chain-magnet.

Differences in optoelectronic properties between H-saturated and unsaturated GaN nanowires with DFT method

NASA Astrophysics Data System (ADS)

Diao, Yu; Liu, Lei; Xia, Sihao; Kong, Yike

2017-05-01

To investigate the influences of dangling bonds on GaN nanowires surface, the differences in optoelectronic properties between H-saturated and unsaturated GaN nanowires are researched through first-principles study. The GaN nanowires along the [0001] growth direction with diameters of 3.7, 7.5 and 9.5 Å are considered. According to the results, H-saturated GaN nanowires are more stable than the unsaturated ones. With increasing nanowire diameter, unsaturated GaN nanowires become more stable, while the stability of H-saturated GaN nanowires has little change. After geometry optimization, the atomic displacements of unsaturated and H-saturated models are almost reversed. In (0001) crystal plane, Ga atoms tend to move inwards and N atoms tend to move outwards slightly for the unsaturated nanowires, while Ga atoms tend to move outwards and N atoms tend to move inwards slightly for the H-saturated nanowires. Besides, with increasing nanowire diameter, the conduction band minimum of H-saturated nanowire moves to the lower energy side, while that of the unsaturated nanowire changes slightly. The bandgaps of H-saturated nanowires are approaching to bulk GaN as the diameter increases. Absorption curves and reflectivity curves of the unsaturated and H-saturated nanowires exhibit the same trend with the change of energy except the H-saturated models which show larger variations. Through all the calculated results above, we can better understand the effects of dangling bonds on the optoelectronic properties of GaN nanowires and select more proper calculation models and methods for other calculations.

The effect of nanowire length and diameter on the properties of transparent, conducting nanowire films

NASA Astrophysics Data System (ADS)

Bergin, Stephen M.; Chen, Yu-Hui; Rathmell, Aaron R.; Charbonneau, Patrick; Li, Zhi-Yuan; Wiley, Benjamin J.

2012-03-01

This article describes how the dimensions of nanowires affect the transmittance and sheet resistance of a random nanowire network. Silver nanowires with independently controlled lengths and diameters were synthesized with a gram-scale polyol synthesis by controlling the reaction temperature and time. Characterization of films composed of nanowires of different lengths but the same diameter enabled the quantification of the effect of length on the conductance and transmittance of silver nanowire films. Finite-difference time-domain calculations were used to determine the effect of nanowire diameter, overlap, and hole size on the transmittance of a nanowire network. For individual nanowires with diameters greater than 50 nm, increasing diameter increases the electrical conductance to optical extinction ratio, but the opposite is true for nanowires with diameters less than this size. Calculations and experimental data show that for a random network of nanowires, decreasing nanowire diameter increases the number density of nanowires at a given transmittance, leading to improved connectivity and conductivity at high transmittance (>90%). This information will facilitate the design of transparent, conducting nanowire films for flexible displays, organic light emitting diodes and thin-film solar cells.This article describes how the dimensions of nanowires affect the transmittance and sheet resistance of a random nanowire network. Silver nanowires with independently controlled lengths and diameters were synthesized with a gram-scale polyol synthesis by controlling the reaction temperature and time. Characterization of films composed of nanowires of different lengths but the same diameter enabled the quantification of the effect of length on the conductance and transmittance of silver nanowire films. Finite-difference time-domain calculations were used to determine the effect of nanowire diameter, overlap, and hole size on the transmittance of a nanowire network. For

W18O49 nanowires assembled on carbon felt for application to supercapacitors

NASA Astrophysics Data System (ADS)

Jung, Jinjoo; Kim, Do Hyung

2018-03-01

For supercapacitor applications, W18O49 nanowires have been extensively grown on graphitic carbon felt using a facile solvothermal method. The diameter and length of the nanowires are about 7 and 300 nm, respectively. The nanowires consist of monoclinic W18O49 grown along the [010] direction, as shown by TEM and XRD analyses. The W18O49 nanowires, assembled on carbon felt, exhibit a high capacity of 588.33 F/g at a current density of 1 A/g together with an excellent cycle performance, and a low internal resistance during the electrochemical tests. This outstanding performance may originate from the three-dimensional porous nanostructure of these W18O49 nanowires, which leads to a reduction in the resistance and fast reaction kinetics due to the high specific surface area and electrolyte accessibility. Furthermore, sufficient oxygen deficiencies of the substoichiometric tungsten oxide can also contribute to the electrochemical activity, which can be confirmed by comparison of CV and EIS data with WO3 nanowires.

Room temperature ferromagnetism in Fe-doped CeO2 nanoparticles.

PubMed

Maensiri, Santi; Phokha, Sumalin; Laokul, Paveena; Seraphin, Supapan

2009-11-01

RT ferromagnetism was observed in nanoparticles of Fe-doped CeO2 (i.e., Ce(0.97)Fe(0.03)O2) synthesized by a sol-gel method. The undoped and Fe-doped CeO2 were characterized by XRD, Raman spectroscopy, TEM, and VSM. The undoped samples and Ce(0.97)Fe(0.03)O2 precursor exhibit a diamagnetic behavior. The 673 K-calcined Ce(0.97)Fe(0.03)O2 sample is paramagnetic whereas 773 and 873 K-calcined Ce(0.97)Fe(0.03)O2 samples are ferromagnetism having the magnetizations of 4.65 x 10(-3) emu/g and 6.20 x 10(-3) emu/g at 10 kOe, respectively. Our results indicate that the ferromagnetic property is intrinsic to the Fe-doped CeO2 system and is not a result of any secondary magnetic phase or cluster formation.

Magnetic domains and defects in ferromagnetic liquid crystal colloids realized with optical patterning

NASA Astrophysics Data System (ADS)

Hess, Andrew; Liu, Qingkun; Smalyukh, Ivan

A promising approach in designing composite materials with unusual physical behavior combines solid nanostructures and orientationally ordered soft matter at the mesoscale. Such composites not only inherit properties of their constituents but also can exhibit emergent behavior, such as ferromagnetic ordering of colloidal metal nanoparticles forming mesoscopic magnetization domains when dispersed in a nematic liquid crystal. Here we demonstrate the optical patterning of domain structures and topological defects in such ferromagnetic liquid crystal colloids which allows for altering their response to magnetic fields. Our findings reveal the nature of the defects in this soft matter system which is different as compared to non-polar nematic and ferromagnetic systems alike. This research was supported by the NSF Grant DMR-1420736.

Room temperature ferromagnetism in a phthalocyanine based carbon material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Honda, Z., E-mail: honda@fms.saitama-u.ac.jp; Sato, K.; Sakai, M.

2014-02-07

We report on a simple method to fabricate a magnetic carbon material that contains nitrogen-coordinated transition metals and has a large magnetic moment. Highly chlorinated iron phthalocyanine was used as building blocks and potassium as a coupling reagent to uniformly disperse nitrogen-coordinated iron atoms on the phthalocyanine based carbon material. The iron phthalocyanine based carbon material exhibits ferromagnetic properties at room temperature and the ferromagnetic phase transition occurs at T{sub c} = 490 ± 10 K. Transmission electron microscopy observation, X-ray diffraction analysis, and the temperature dependence of magnetization suggest that the phthalocyanine molecules form three-dimensional random networks in the iron phthalocyanine based carbon material.

Critical current oscillations of elliptical Josephson junctions with single-domain ferromagnetic layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Glick, Joseph A.; Khasawneh, Mazin A.; Niedzielski, Bethany M.

We report that josephson junctions containing ferromagnetic layers are of considerable interest for the development of practical cryogenic memory and superconducting qubits. Such junctions exhibit a ground-state phase shift of π for certain ranges of ferromagnetic layer thicknesses. We present studies of Nb based micron-scale elliptically shaped Josephson junctions containing ferromagnetic barriers of Ni 81Fe 19 or Ni 65Fe 15Co 20. By applying an external magnetic field, the critical current of the junctions is found to follow characteristic Fraunhofer patterns and display sharp switching behavior suggestive of single-domain magnets. The high quality of the Fraunhofer patterns enables us to extractmore » the maximum value of the critical current even when the peak is shifted significantly outside the range of the data due to the magnetic moment of the ferromagnetic layer. The maximum value of the critical current oscillates as a function of the ferromagnetic barrier thickness, indicating transitions in the phase difference across the junction between values of zero and π. Lastly, we compare the data to previous work and to models of the 0-π transitions based on existing theories.« less

Critical current oscillations of elliptical Josephson junctions with single-domain ferromagnetic layers

DOE PAGES

Glick, Joseph A.; Khasawneh, Mazin A.; Niedzielski, Bethany M.; ...

2017-10-06

We report that josephson junctions containing ferromagnetic layers are of considerable interest for the development of practical cryogenic memory and superconducting qubits. Such junctions exhibit a ground-state phase shift of π for certain ranges of ferromagnetic layer thicknesses. We present studies of Nb based micron-scale elliptically shaped Josephson junctions containing ferromagnetic barriers of Ni 81Fe 19 or Ni 65Fe 15Co 20. By applying an external magnetic field, the critical current of the junctions is found to follow characteristic Fraunhofer patterns and display sharp switching behavior suggestive of single-domain magnets. The high quality of the Fraunhofer patterns enables us to extractmore » the maximum value of the critical current even when the peak is shifted significantly outside the range of the data due to the magnetic moment of the ferromagnetic layer. The maximum value of the critical current oscillates as a function of the ferromagnetic barrier thickness, indicating transitions in the phase difference across the junction between values of zero and π. Lastly, we compare the data to previous work and to models of the 0-π transitions based on existing theories.« less

Morphology control of layer-structured gallium selenide nanowires.

PubMed

Peng, Hailin; Meister, Stefan; Chan, Candace K; Zhang, Xiao Feng; Cui, Yi

2007-01-01

Layer-structured group III chalcogenides have highly anisotropic properties and are attractive materials for stable photocathodes and battery electrodes. We report the controlled synthesis and characterization of layer-structured GaSe nanowires via a catalyst-assisted vapor-liquid-solid (VLS) growth mechanism during GaSe powder evaporation. GaSe nanowires consist of Se-Ga-Ga-Se layers stacked together via van der Waals interactions to form belt-shaped nanowires with a growth direction along the [11-20], width along the [1-100], and height along the [0001] direction. Nanobelts exhibit a variety of morphologies including straight, zigzag, and saw-tooth shapes. These morphologies are realized by controlling the growth temperature and time so that the actual catalysts have a chemical composition of Au, Au-Ga alloy, or Ga. The participation of Ga in the VLS catalyst is important for achieving different morphologies of GaSe. In addition, GaSe nanotubes are also prepared by a slow growth process.

Metal-conductive polymer hybrid nanostructures: preparation and electrical properties of palladium-polyimidazole nanowires

NASA Astrophysics Data System (ADS)

Al-Hinai, Mariam; Hassanien, Reda; Watson, Scott M. D.; Wright, Nicholas G.; Houlton, Andrew; Horrocks, Benjamin R.

2016-03-01

A simple, convenient method for the formation of hybrid metal/conductive polymer nanostructures is described. Polyimidazole (PIm) has been templated on λ-DNA via oxidative polymerisation of imidazole using FeCl3 to produce conductive PIm/DNA nanowires. The PIm/DNA nanowires were decorated with Pd (Pd/PIm/DNA) by electroless reduction of {{{{PdCl}}}4}2- with NaBH4 in the presence of PIm/DNA; the choice of imidazole was motivated by the potential Pd(II) binding site at the pyridinic N atom. The formation of PIm/DNA and the presence of metallic Pd on Pd/PIm/DNA nanowires were verified by FTIR, UV-vis and XPS spectroscopy techniques. AFM studies show that the nanowires have diameters in the range 5-45 nm with a slightly greater mean diameter (17.1 ± 0.75 nm) for the Pd-decorated nanowires than the PIm/DNA nanowires (14.5 ± 0.89 nm). After incubation for 24 h in the polymerisation solution, the PIm/DNA nanowires show a smooth, uniform morphology, which is retained after decoration with Pd. Using a combination of scanned conductance microscopy, conductive AFM and two-terminal measurements we show that both types of nanowire are conductive and that it is possible to discriminate different possible mechanisms of transport. The conductivity of the Pd/PIm/DNA nanowires, (0.1-1.4 S cm-1), is comparable to the PIm/DNA nanowires (0.37 ± 0.029 S cm-1). In addition, the conductance of Pd/PIm/DNA nanowires exhibits Arrhenius behaviour (E a = 0.43 ± 0.02 eV) as a function of temperature in contrast to simple Pd/DNA nanowires. These results indicate that although the Pd crystallites on Pd/PIm/DNA nanowires decorate the PIm polymer, the major current pathway is through the polymer rather than the Pd.

Anomalous photoconductive behavior of a single InAs nanowire photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Junshuai; Yan, Xin; Sun, Fukuan

2015-12-28

We report on a bare InAs nanowire photodetector which exhibits an anomalous photoconductive behavior. Under low-power illumination, the current is smaller than the dark current, and monotonously decreases as the excitation power increases. When the excitation power is high enough, the current starts to increase normally. The phenomenon is attributed to different electron mobilities in the “core” and “shell” of a relatively thick nanowire originating from the surface effect, which result in a quickly dropped “core current” and slowly increased “shell current” under illumination.

Influence factors of the inter-nanowire thermal contact resistance in the stacked nanowires

NASA Astrophysics Data System (ADS)

Wu, Dongxu; Huang, Congliang; Zhong, Jinxin; Lin, Zizhen

2018-05-01

The inter-nanowire thermal contact resistance is important for tuning the thermal conductivity of a nanocomposite for thermoelectric applications. In this paper, the stacked copper nanowires are applied for studying the thermal contact resistance. The stacked copper nanowires are firstly made by the cold-pressing method, and then the nanowire stacks are treated by sintering treatment. With the effect of the volumetric fraction of nanowires in the stack and the influence of the sintering-temperature on the thermal contact resistance discussed, results show that: The thermal conductivity of the 150-nm copper nanowires can be enlarged almost 2 times with the volumetric fraction increased from 32 to 56% because of the enlarged contact-area and contact number of a copper nanowire. When the sintering temperature increases from 293 to 673 K, the thermal conductivity of the stacked 300-nm nanowires could be enlarged almost 2.5 times by the sintering treatment, because of the improved lattice property of the contact zone. In conclusion, application of a high volumetric fraction or/and a sintering-treatment are effectivity to tune the inter-nanowire thermal contact resistance, and thus to tailor the thermal conductivity of a nanowire network or stack.

Atomic-scale investigation and magnetic properties of Cu80Co20 nanowires

NASA Astrophysics Data System (ADS)

Hannour, A.; Lardé, R.; Jean, M.; Bran, J.; Pareige, P.; Le Breton, J. M.

2011-09-01

Cu80Co20 granular alloy nanowires were synthesized by electrodeposition method and investigated by x-ray diffraction (XRD), Laser Assisted Wide Angle Tomographic Atom Probe (LAWATAP), and SQUID magnetometry. XRD results reveal the existence of a fcc Cu matrix and fcc Co-rich nanograins, with a preferred orientation along the [200] direction (perpendicular to the substrate surface). The Co-rich nanograins could be coherent with the Cu matrix. 3D reconstructions of a nano-sized volume, obtained by LAWATAP, reveal the heterogeneous aspect of the Cu80Co20 nanowires: Co-rich nanoclusters with size between 2 and 10 nm are detected, and the presence of Cu and Co oxides is evidenced. Magnetization measurements indicate that the Co-rich nanoclusters are superparamagnetic, with a blocking temperature that extends up to, at least, room temperature. The presence of ferromagnetic domains at room temperature indicates that some Co-rich nanoclusters are correlated within a volume that corresponds to a so-called interacting superparamagnetic phase. As a matter of fact, by LAWATAP atomic-scale analysis, a very good correlation is obtained between microstructure and magnetic properties.

Interference lithographically defined and catalytically etched, large-area silicon nanocones from nanowires.

PubMed

Dawood, M K; Liew, T H; Lianto, P; Hong, M H; Tripathy, S; Thong, J T L; Choi, W K

2010-05-21

We report a simple and cost effective method for the synthesis of large-area, precisely located silicon nanocones from nanowires. The nanowires were obtained from our interference lithography and catalytic etching (IL-CE) method. We found that porous silicon was formed near the Au catalyst during the fabrication of the nanowires. The porous silicon exhibited enhanced oxidation ability when exposed to atmospheric conditions or in wet oxidation ambient. Very well located nanocones with uniform sharpness resulted when these oxidized nanowires were etched in 10% HF. Nanocones of different heights were obtained by varying the doping concentration of the silicon wafers. We believe this is a novel method of producing large-area, low cost, well defined nanocones from nanowires both in terms of the control of location and shape of the nanocones. A wide range of potential applications of the nanocone array can be found as a master copy for nanoimprinted polymer substrates for possible biomedical research; as a candidate for making sharp probes for scanning probe nanolithography; or as a building block for field emitting tips or photodetectors in electronic/optoelectronic applications.

Simple synthetic route to manganese-containing nanowires with the spinel crystal structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Lei; Zhang, Yan; Hudak, Bethany M.

This report describes a new route to synthesize single-crystalline manganese-containing spinel nanowires (NWs) by a two-step hydrothermal and solid-state synthesis. Interestingly, a nanowire or nanorod morphology is maintained during conversion from MnO{sub 2}/MnOOH to CuMn{sub 2}O{sub 4}/Mg{sub 2}MnO{sub 4}, despite the massive structural rearrangement this must involve. Linear sweep voltammetry (LSV) curves of the products give preliminary demonstration that CuMn{sub 2}O{sub 4} NWs are catalytically active towards the oxygen evolution reaction (OER) in alkaline solution, exhibiting five times the magnitude of current density found with pure carbon black. - Highlights: • Synthesis of single-crystalline manganese-containing spinel nanowires. • Binary oxidemore » nanowire converted to ternary oxide wire through solid state reaction. • Approach to structure conversion with shape retention could be generally applicable. • Copper and Manganese display multiple oxidation states with potential for catalysis. • CuMn{sub 2}O{sub 4} nanowires show promise as catalysts for the oxygen evolution reaction.« less

A room temperature ethanol sensor made from p-type Sb-doped SnO2 nanowires.

PubMed

Wu, Jyh Ming

2010-06-11

A p-type ethanol sensor with a response time of approximately 8.3 s at room temperature was produced by SnO(2):Sb nanowires. The electrical properties of p-type SnO(2) nanowires are stable with a hole concentration of 1.544 x 10(17) cm(-3) and a field-effect mobility of 22 cm(2) V(-2) S(-1). X-ray photoelectron spectroscopy (XPS) and Hall measurement revealed that as-synthesized nanowires exhibit p-type behavior. A comprehensive investigation of the p-type sensing mechanism is reported.

Origin of magnetic properties in carbon implanted ZnO nanowires.

PubMed

Wang, Y F; Shao, Y C; Hsieh, S H; Chang, Y K; Yeh, P H; Hsueh, H C; Chiou, J W; Wang, H T; Ray, S C; Tsai, H M; Pao, C W; Chen, C H; Lin, H J; Lee, J F; Wu, C T; Wu, J J; Chang, Y M; Asokan, K; Chae, K H; Ohigashi, T; Takagi, Y; Yokoyama, T; Kosugi, N; Pong, W F

2018-05-17

Various synchrotron radiation-based spectroscopic and microscopic techniques are used to elucidate the room-temperature ferromagnetism of carbon-doped ZnO-nanowires (ZnO-C:NW) via a mild C + ion implantation method. The photoluminescence and magnetic hysteresis loops reveal that the implantation of C reduces the number of intrinsic surface defects and increases the saturated magnetization of ZnO-NW. The interstitial implanted C ions constitute the majority of defects in ZnO-C:NW as confirmed by the X-ray absorption spectroscopic studies. The X-ray magnetic circular dichroism spectra of O and C K-edge respectively indicate there is a reduction in the number of unpaired/dangling O 2p bonds in the surface region of ZnO-C:NW and the C 2p-derived states of the implanted C ions strongly affect the net spin polarization in the surface and bulk regions of ZnO-C:NW. Furthermore, these findings corroborate well with the first-principles calculations of C-implanted ZnO in surface and bulk regions, which highlight the stability of implanted C for the suppression and enhancement of the ferromagnetism of the ZnO-C:NW in the surface region and bulk phase, respectively.

Nanowire Photovoltaic Devices

NASA Technical Reports Server (NTRS)

Forbes, David

2015-01-01

Firefly Technologies, in collaboration with the Rochester Institute of Technology and the University of Wisconsin-Madison, developed synthesis methods for highly strained nanowires. Two synthesis routes resulted in successful nanowire epitaxy: direct nucleation and growth on the substrate and a novel selective-epitaxy route based on nanolithography using diblock copolymers. The indium-arsenide (InAs) nanowires are implemented in situ within the epitaxy environment-a significant innovation relative to conventional semiconductor nanowire generation using ex situ gold nanoparticles. The introduction of these nanoscale features may enable an intermediate band solar cell while simultaneously increasing the effective absorption volume that can otherwise limit short-circuit current generated by thin quantized layers. The use of nanowires for photovoltaics decouples the absorption process from the current extraction process by virtue of the high aspect ratio. While no functional solar cells resulted from this effort, considerable fundamental understanding of the nanowire epitaxy kinetics and nanopatterning process was developed. This approach could, in principle, be an enabling technology for heterointegration of dissimilar materials. The technology also is applicable to virtual substrates. Incorporating nanowires onto a recrystallized germanium/metal foil substrate would potentially solve the problem of grain boundary shunting of generated carriers by restricting the cross-sectional area of the nanowire (tens of nanometers in diameter) to sizes smaller than the recrystallized grains (0.5 to 1 micron(exp 2).

Magnetization reversal dynamics in Co nanowires with competing magnetic anisotropies

NASA Astrophysics Data System (ADS)

Pal, Semanti; Saha, Susmita; Polley, Debanjan; Barman, Anjan

2011-12-01

We present the magnetization reversal dynamics of Co nanowires with competing magnetic anisotropies. The aspect ratio ( R) of the nanowires is varied between 2.5 and 60, and we observe a cross-over of the directions of the magnetic easy and hard axes at R=6.8. Micromagnetic simulations qualitatively reproduce the observed cross-over and give detailed insight into the reversal mechanisms associated with the cross-over. The reversal mechanism for a field applied along the long axis of the nanowire exhibits a quasi-coherent rotation mode and a corkscrew-like mode, respectively, above and below the cross-over, with the formation of a Bloch domain near the cross-over region. For a field applied along the short axis, the reversal occurs by nucleation and propagation of reversed domains from the two ends of the nanowires for very high values of the aspect ratio down to the cross-over region, but it transforms into quasi-coherent rotation mode for smaller aspect ratios (below the cross-over region).

Piezoresistive silicon nanowire resonators as embedded building blocks in thick SOI

NASA Astrophysics Data System (ADS)

Nasr Esfahani, Mohammad; Kilinc, Yasin; Çagatay Karakan, M.; Orhan, Ezgi; Hanay, M. Selim; Leblebici, Yusuf; Erdem Alaca, B.

2018-04-01

The use of silicon nanowire resonators in nanoelectromechanical systems for new-generation sensing and communication devices faces integration challenges with higher-order structures. Monolithic and deterministic integration of such nanowires with the surrounding microscale architecture within the same thick crystal is a critical aspect for the improvement of throughput, reliability and device functionality. A monolithic and IC-compatible technology based on a tuned combination of etching and protection processes was recently introduced yielding silicon nanowires within a 10 μ m-thick device layer. Motivated by its success, the implications of the technology regarding the electromechanical resonance are studied within a particular setting, where the resonator is co-fabricated with all terminals and tuning electrodes. Frequency response is measured via piezoresistive readout with frequency down-mixing. Measurements indicate mechanical resonance with frequencies as high as 100 MHz exhibiting a Lorentzian behavior with proper transition to nonlinearity, while Allan deviation on the order of 3-8 ppm is achieved. Enabling the fabrication of silicon nanowires in thick silicon crystals using conventional semiconductor manufacturing, the present study thus demonstrates an alternative pathway to bottom-up and thin silicon-on-insulator approaches for silicon nanowire resonators.

Molybdenum disulfide nanoflake-zinc oxide nanowire hybrid photoinverter.

PubMed

Hosseini Shokouh, Seyed Hossein; Pezeshki, Atiye; Ali Raza, Syed Raza; Choi, Kyunghee; Min, Sung-Wook; Jeon, Pyo Jin; Lee, Hee Sung; Im, Seongil

2014-05-27

We demonstrate a hybrid inverter-type nanodevice composed of a MoS2 nanoflake field-effect transistor (FET) and ZnO nanowire Schottky diode on one substrate, aiming at a one-dimensional (1D)-two-dimensional (2D) hybrid integrated electronic circuit with multifunctional capacities of low power consumption, high gain, and photodetection. In the present work, we used a nanotransfer printing method using polydimethylsiloxane for the fabrication of patterned bottom-gate MoS2 nanoflake FETs, so that they could be placed near the ZnO nanowire Schottky diodes that were initially fabricated. The ZnO nanowire Schottky diode and MoS2 FET worked respectively as load and driver for a logic inverter, which exhibits a high voltage gain of ∼50 at a supply voltage of 5 V and also shows a low power consumption of less than 50 nW. Moreover, our inverter effectively operates as a photoinverter, detecting visible photons, since MoS2 FETs appear very photosensitive, while the serially connected ZnO nanowire Schottky diode was blind to visible light. Our 1D-2D hybrid nanoinverter would be quite promising for both logic and photosensing applications due to its performance and simple device configuration as well.

Comparison of GaP nanowires grown from Au and Sn vapor-liquid-solid catalysts as photoelectrode materials

NASA Astrophysics Data System (ADS)

Lee, Sudarat; Wen, Wen; Cheek, Quintin; Maldonado, Stephen

2018-01-01

Gallium phosphide (GaP) nanowire film electrodes have been prepared via solid sublimation of GaP powder using both gold (Au) and tin (Sn) nanoparticles as the vapor-liquid-solid (VLS) catalysts on Si(1 1 1) and GaP(1 1 1)B substrates. The resultant GaP nanowires are compared and contrasted in terms of structures and photoactivity in photoelectrochemical half cells. Raman spectra implicated a difference in the surface condition of the two types of nanowires. Complete wet etching removal of metallic VLS catalysts from the as-prepared GaP nanowires was possible with Sn catalysts but not with Au catalysts. The photoresponses of both Sn- and Au-seeded GaP nanowire films were collected and examined under 100 mW cm-2 white light illumination. Au-seeded nanowire films exhibited strong n-type characteristics when measured in nonaqueous electrolyte with ferrocene/ferricenium as the redox species while Sn-seeded nanowires showed behavior consistent with degenerate n-type doping.

Investigation of the influence of growth parameters on self-catalyzed ITO nanowires by high RF-power sputtering

NASA Astrophysics Data System (ADS)

Li, Qiang; Zhang, Yuantao; Feng, Lungang; Wang, Zuming; Wang, Tao; Yun, Feng

2018-04-01

Tin-doped indium oxide (ITO) nanowires are successfully fabricated using a radio frequency (RF) sputtering technique with a high RF power of 250 W. The fabrication of the ITO nanowires is optimized through the study of oxygen flow rates, temperatures and RF power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target is observed and the mechanism for the difference is discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method demonstrated good conductivity (15 Ω sq-1) and a transmittance of more than 64% at a wavelength longer than 550 nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices.

A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications

PubMed Central

Chen, Min-Cheng; Chen, Hao-Yu; Lin, Chia-Yi; Chien, Chao-Hsin; Hsieh, Tsung-Fan; Horng, Jim-Tong; Qiu, Jian-Tai; Huang, Chien-Chao; Ho, Chia-Hua; Yang, Fu-Liang

2012-01-01

This paper reports a versatile nano-sensor technology using “top-down” poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady Vth adjustment window (>2 V Programming/Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording. PMID:22666012

Spray-Deposited Large-Area Copper Nanowire Transparent Conductive Electrodes and Their Uses for Touch Screen Applications.

PubMed

Chu, Hsun-Chen; Chang, Yen-Chen; Lin, Yow; Chang, Shu-Hao; Chang, Wei-Chung; Li, Guo-An; Tuan, Hsing-Yu

2016-05-25

Large-area conducting transparent conducting electrodes (TCEs) were prepared by a fast, scalable, and low-cost spray deposition of copper nanowire (CuNW) dispersions. Thin, long, and pure copper nanowires were obtained via the seed-mediated growth in an organic solvent-based synthesis. The mean length and diameter of nanowires are, respectively, 37.7 μm and 46 nm, corresponding to a high-mean-aspect ratio of 790. These wires were spray-deposited onto a glass substrate to form a nanowire conducting network which function as a TCE. CuNW TCEs exhibit high-transparency and high-conductivity since their relatively long lengths are advantageous in lowering in the sheet resistance. For example, a 2 × 2 cm(2) transparent nanowire electrode exhibits transmittance of T = 90% with a sheet resistance as low as 52.7 Ω sq(-1). Large-area sizes (>50 cm(2)) of CuNW TCEs were also prepared by the spray coating method and assembled as resistive touch screens that can be integrated with a variety of devices, including LED lighting array, a computer, electric motors, and audio electronic devices, showing the capability to make diverse sizes and functionalities of CuNW TCEs by the reported method.

Self-bridging of vertical silicon nanowires and a universal capacitive force model for spontaneous attraction in nanostructures.

PubMed

Sun, Zhelin; Wang, Deli; Xiang, Jie

2014-11-25

Spontaneous attractions between free-standing nanostructures have often caused adhesion or stiction that affects a wide range of nanoscale devices, particularly nano/microelectromechanical systems. Previous understandings of the attraction mechanisms have included capillary force, van der Waals/Casimir forces, and surface polar charges. However, none of these mechanisms universally applies to simple semiconductor structures such as silicon nanowire arrays that often exhibit bunching or adhesions. Here we propose a simple capacitive force model to quantitatively study the universal spontaneous attraction that often causes stiction among semiconductor or metallic nanostructures such as vertical nanowire arrays with inevitably nonuniform size variations due to fabrication. When nanostructures are uniform in size, they share the same substrate potential. The presence of slight size differences will break the symmetry in the capacitive network formed between the nanowires, substrate, and their environment, giving rise to electrostatic attraction forces due to the relative potential difference between neighboring wires. Our model is experimentally verified using arrays of vertical silicon nanowire pairs with varied spacing, diameter, and size differences. Threshold nanowire spacing, diameter, or size difference between the nearest neighbors has been identified beyond which the nanowires start to exhibit spontaneous attraction that leads to bridging when electrostatic forces overcome elastic restoration forces. This work illustrates a universal understanding of spontaneous attraction that will impact the design, fabrication, and reliable operation of nanoscale devices and systems.

An optimal thermal evaporation synthesis of c-axis oriented ZnO nanowires with excellent UV sensing and emission characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saha, Tridib, E-mail: tridib.saha@monash.edu; Achath Mohanan, Ajay, E-mail: ajay.mohanan@monash.edu; Swamy, Varghese, E-mail: varghese.swamy@monash.edu

Highlights: • c-Axis alignment of ZnO nanowires was optimized using self-seeding thermal evaporation method. • Influence of purified air on the morphology and optoelectronic properties were studied. • Nanowires grown under optimal conditions exhibit strong UV emission peak in PL spectrum. • Optimized growth condition establish nanowires of excellent UV sensing characteristics - Abstract: Well-aligned (c-axis oriented) ZnO nanowire arrays were successfully synthesized on Si (1 0 0) substrates through an optimized self-seeding thermal evaporation method. An open-ended chemical vapor deposition (CVD) setup was used in the experiment, with argon and purified air as reaction gases. Epitaxial growth of c-axismore » oriented ZnO nanowires was observed for 5 sccm flow rate of purified air, whereas Zn/Zn suboxide layers and multiple polycrystalline layers of ZnO were obtained for absence and excess of purified air, respectively. Ultraviolet (UV) sensing and emission properties of the as-grown ZnO nanostructures were investigated through the current–voltage (I–V) characteristics of the nanowires under UV (λ = 365 nm) illumination of 8 mW/cm{sup 2} and using photoluminescence spectra. Nanowires grown under optimum flow of air emitted four times higher intensity of 380 nm UV light as well as exhibited 34 times higher UV radiation sensitivity compared to that of other nanostructures synthesized in this study.« less

Template-Assisted Hydrothermal Growth of One-Dimensional Zinc Oxide Nanowires for Photocatalytic Application.

PubMed

Ma, Shuai-Shuai; Xu, Peng; Cai, Zhi-Lan; Li, Qing; Ye, Zhao-Lian; Zhou, Yu-Ming

2018-07-01

One-dimensional (1D) semiconductor ZnO nanowires have been successfully synthesized by a novel soft-chemical hydrothermal method with allylpolyethoxy amino carboxylate (AA-APEA) at low temperature. Their structure and properties have been characterized by a series of techniques, including X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX) and transmission electron microscopy (TEM). It was found that ZnO nanowires with diameters around 50 nm and lengths up to about several micrometers are well-distributed. The photocatalytic activity toward degradation of methylene blue (MB) aqueous solution under ultraviolet (UV) was investigated and the results showed that the ZnO nanowires exhibit a markedly higher photoactivity compared to the ZnO nanoparticles which were obtained without AA-APEA polymer assistant, and it can be ascribed to the special 1D morphology of the ZnO nanowires. In particular, the rate of degradation of the ZnO nanowires was 11 times faster than that of ZnO nanoparticles. In addition, the ZnO nanowires could be easily recycled in UV photocatalytic activity. These observations could promote new applications of photocatalyst for wastewater treatment utilizing oxide semiconductor nanostructures.

Oxidation of platinum nickel nanowires to improve durability of oxygen-reducing electrocatalysts

DOE PAGES

Alia, Shaun M.; Pylypenko, Svitlana; Dameron, Arrelaine; ...

2016-01-12

In this study, the impact of heat treating platinum-coated nickel (Pt-Ni) nanowires in oxygen is examined to determine the effect on oxygen reduction (ORR) activity and durability. Pt-Ni nanowires exhibit promising ORR mass activities (3 times greater than Pt nanoparticles, 1.5 times greater than U.S. Department of Energy target) both before and after potential cycling for all but the highest annealing temperatures explored. The annealing of Pt-Ni nanowires in oxygen with increasing temperature is found to reduce surface area and ORR activity in comparison to the untreated material, but also reduces activity losses following durability testing. Following potential cycling, unannealedmore » Pt-Ni nanowires show significant losses in surface area (23%) and specific activity (18%) while Pt-Ni nanowires annealed at 200°C show modest increases in surface area (2%) and specific activity (6%) after potential cycling. Increasing annealing temperatures also show a clear trend of decreasing Ni dissolution rates. While oxygen annealing has shown the ability to improve durability of Pt-Ni nanowires, significant Ni dissolution was observed in all samples and suggests oxide passivation while showing promise for improved durability, when employed by itself is insufficient to prevent all contamination concerns involving Ni dissolution.« less

Different growth regimes in InP nanowire growth mediated by Ag nanoparticles.

PubMed

Oliveira, D S; Zavarize, M; Tizei, L H G; Walls, M; Ospina, C A; Iikawa, F; Ugarte, D; Cotta, M A

2017-12-15

We report on the existence of two different regimes in one-step Ag-seeded InP nanowire growth. The vapor-liquid-solid-mechanism is present at larger In precursor flows and temperatures, ∼500 °C, yielding high aspect ratio and pure wurtzite InP nanowires with a semi-spherical metal particle at the thin apex. Periodic diameter oscillations can be achieved under extreme In supersaturations at this temperature range, showing the presence of a liquid catalyst. However, under lower temperatures and In precursor flows, large diameter InP nanowires with mixed wurtzite/zincblende segments are obtained, similarly to In-assisted growth. Chemical composition analysis suggest that In-rich droplet formation is catalyzed at the substrate surface via Ag nanoparticles; this process might be facilitated by the sulfur contamination detected in these nanoparticles. Furthermore, part of the original Ag nanoparticle remains solid and is embedded inside the actual catalyst, providing an in situ method to switch growth mechanisms upon changing In precursor flow. Nevertheless, our Ag-seeded InP nanowires exhibit overall optical emission spectra consistent with the observed structural properties and similar to Au-catalyzed InP nanowires. We thus show that Ag nanoparticles may be a suitable replacement for Au in InP nanowire growth.

Metallic ferromagnetic films with magnetic damping under 1.4 × 10 -3

DOE PAGES

Lee, Aidan J.; Brangham, Jack T.; Cheng, Yang; ...

2017-08-10

Low-damping magnetic materials have been widely used in microwave and spintronic applications because of their low energy loss and high sensitivity. While the Gilbert damping constant can reach 10 -4 to 10 -5 in some insulating ferromagnets, metallic ferromagnets generally have larger damping due to magnon scattering by conduction electrons. Meanwhile, low-damping metallic ferromagnets are desired for charge-based spintronic devices. In this article, we report the growth of Co 25Fe 75 epitaxial films with excellent crystalline quality evident by the clear Laue oscillations and exceptionally narrow rocking curve in the X-ray diffraction scans as well as from scanning transmission electronmore » microscopy. Remarkably, the Co 25Fe 75 epitaxial films exhibit a damping constant <1.4 × 10 -3, which is comparable to the values for some high-quality Y 3Fe 5O 12 films. This record low damping for metallic ferromagnets offers new opportunities for charge-based applications such as spin-transfer-torque-induced switching and magnetic oscillations.« less

Optical orientation in ferromagnet/semiconductor hybrids

NASA Astrophysics Data System (ADS)

Korenev, V. L.

2008-11-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

Ultrafast Photodetection in the Quantum Wells of Single AlGaAs/GaAs-Based Nanowires.

PubMed

Erhard, N; Zenger, S; Morkötter, S; Rudolph, D; Weiss, M; Krenner, H J; Karl, H; Abstreiter, G; Finley, J J; Koblmüller, G; Holleitner, A W

2015-10-14

We investigate the ultrafast optoelectronic properties of single Al0.3Ga0.7As/GaAs core-shell nanowires. The nanowires contain GaAs-based quantum wells. For a resonant excitation of the quantum wells, we find a picosecond photocurrent which is consistent with an ultrafast lateral expansion of the photogenerated charge carriers. This Dember-effect does not occur for an excitation of the GaAs-based core of the nanowires. Instead, the core exhibits an ultrafast displacement current and a photothermoelectric current at the metal Schottky contacts. Our results uncover the optoelectronic dynamics in semiconductor core-shell nanowires comprising quantum wells, and they demonstrate the possibility to use the low-dimensional quantum well states therein for ultrafast photoswitches and photodetectors.

Nanowire structures and electrical devices

DOEpatents

Bezryadin, Alexey; Remeika, Mikas

2010-07-06

The present invention provides structures and devices comprising conductive segments and conductance constricting segments of a nanowire, such as metallic, superconducting or semiconducting nanowire. The present invention provides structures and devices comprising conductive nanowire segments and conductance constricting nanowire segments having accurately selected phases including crystalline and amorphous states, compositions, morphologies and physical dimensions, including selected cross sectional dimensions, shapes and lengths along the length of a nanowire. Further, the present invention provides methods of processing nanowires capable of patterning a nanowire to form a plurality of conductance constricting segments having selected positions along the length of a nanowire, including conductance constricting segments having reduced cross sectional dimensions and conductance constricting segments comprising one or more insulating materials such as metal oxides.

Crystal phase-based epitaxial growth of hybrid noble metal nanostructures on 4H/fcc Au nanowires

NASA Astrophysics Data System (ADS)

Lu, Qipeng; Wang, An-Liang; Gong, Yue; Hao, Wei; Cheng, Hongfei; Chen, Junze; Li, Bing; Yang, Nailiang; Niu, Wenxin; Wang, Jie; Yu, Yifu; Zhang, Xiao; Chen, Ye; Fan, Zhanxi; Wu, Xue-Jun; Chen, Jinping; Luo, Jun; Li, Shuzhou; Gu, Lin; Zhang, Hua

2018-03-01

Crystal-phase engineering offers opportunities for the rational design and synthesis of noble metal nanomaterials with unusual crystal phases that normally do not exist in bulk materials. However, it remains a challenge to use these materials as seeds to construct heterometallic nanostructures with desired crystal phases and morphologies for promising applications such as catalysis. Here, we report a strategy for the synthesis of binary and ternary hybrid noble metal nanostructures. Our synthesized crystal-phase heterostructured 4H/fcc Au nanowires enable the epitaxial growth of Ru nanorods on the 4H phase and fcc-twin boundary in Au nanowires, resulting in hybrid Au-Ru nanowires. Moreover, the method can be extended to the epitaxial growth of Rh, Ru-Rh and Ru-Pt nanorods on the 4H/fcc Au nanowires to form unique hybrid nanowires. Importantly, the Au-Ru hybrid nanowires with tunable compositions exhibit excellent electrocatalytic performance towards the hydrogen evolution reaction in alkaline media.

Nanowire-based thermoelectrics

NASA Astrophysics Data System (ADS)

Ali, Azhar; Chen, Yixi; Vasiraju, Venkata; Vaddiraju, Sreeram

2017-07-01

Research on thermoelectrics has seen a huge resurgence since the early 1990s. The ability of tuning a material’s electrical and thermal transport behavior upon nanostructuring has led to this revival. Nevertheless, thermoelectric performances of nanowires and related materials lag far behind those achieved with thin-film superlattices and quantum dot-based materials. This is despite the fact that nanowires offer many distinct advantages in enhancing the thermoelectric performances of materials. The simplicity of the strategy is the first and foremost advantage. For example, control of the nanowire diameters and their surface roughnesses will aid in enhancing their thermoelectric performances. Another major advantage is the possibility of obtaining high thermoelectric performances using simpler nanowire chemistries (e.g., elemental and binary compound semiconductors), paving the way for the fabrication of thermoelectric modules inexpensively from non-toxic elements. In this context, the topical review provides an overview of the current state of nanowire-based thermoelectrics. It concludes with a discussion of the future vision of nanowire-based thermoelectrics, including the need for developing strategies aimed at the mass production of nanowires and their interface-engineered assembly into devices. This eliminates the need for trial-and-error strategies and complex chemistries for enhancing the thermoelectric performances of materials.

Structural and electronic properties of rectangular CdTe nanowire: A DST study

NASA Astrophysics Data System (ADS)

Khan, Md. Shahzad; Bhatia, Manjeet; Srivastava, Anurag

2018-05-01

CdTe rectangular nanowire of different diameter in zinc-blende phase is investigated using density functional theory. Enhancement of diameter increased stability and improved electronic qualities suitable for device purpose applications. Cohesive energy per atom enhanced on enlarging diameter advocating the stability. Large diameter nanowire (22.62Å) exhibits bandgap of 1.21eV and electronic effective mass is observed to be 0.51me. The bonding between Cd-Te atoms are predominantly observed as covalent assuring its inertness towards moisture.

Multiphase separation of copper nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qian, Fang; Lan, Pui Ching; Olson, Tammy

Here, this communication reports a new method to purify copper nanowires with nearly 100% yield from undesired copper nanoparticle side-products formed during batch processes of copper nanowire synthesis. Also, this simple separation method can yield large quantities of long, uniform, high-purity copper nanowires to meet the requirements of nanoelectronics applications as well as provide an avenue for purifying copper nanowires in the industrial scale synthesis of copper nanowires, a key step for commercialization and application of nanowires.

Multiphase separation of copper nanowires

DOE PAGES

Qian, Fang; Lan, Pui Ching; Olson, Tammy; ...

2016-09-01

Here, this communication reports a new method to purify copper nanowires with nearly 100% yield from undesired copper nanoparticle side-products formed during batch processes of copper nanowire synthesis. Also, this simple separation method can yield large quantities of long, uniform, high-purity copper nanowires to meet the requirements of nanoelectronics applications as well as provide an avenue for purifying copper nanowires in the industrial scale synthesis of copper nanowires, a key step for commercialization and application of nanowires.

Programmability of nanowire networks

NASA Astrophysics Data System (ADS)

Bellew, A. T.; Bell, A. P.; McCarthy, E. K.; Fairfield, J. A.; Boland, J. J.

2014-07-01

Electrical connectivity in networks of nanoscale junctions must be better understood if nanowire devices are to be scaled up from single wires to functional material systems. We show that the natural connectivity behaviour found in random nanowire networks presents a new paradigm for creating multi-functional, programmable materials. In devices made from networks of Ni/NiO core-shell nanowires at different length scales, we discover the emergence of distinct behavioural regimes when networks are electrically stressed. We show that a small network, with few nanowire-nanowire junctions, acts as a unipolar resistive switch, demonstrating very high ON/OFF current ratios (>105). However, large networks of nanowires distribute an applied bias across a large number of junctions, and thus respond not by switching but instead by evolving connectivity. We demonstrate that these emergent properties lead to fault-tolerant materials whose resistance may be tuned, and which are capable of adaptively reconfiguring under stress. By combining these two behavioural regimes, we demonstrate that the same nanowire network may be programmed to act both as a metallic interconnect, and a resistive switch device with high ON/OFF ratio. These results enable the fabrication of programmable, multi-functional materials from random nanowire networks.Electrical connectivity in networks of nanoscale junctions must be better understood if nanowire devices are to be scaled up from single wires to functional material systems. We show that the natural connectivity behaviour found in random nanowire networks presents a new paradigm for creating multi-functional, programmable materials. In devices made from networks of Ni/NiO core-shell nanowires at different length scales, we discover the emergence of distinct behavioural regimes when networks are electrically stressed. We show that a small network, with few nanowire-nanowire junctions, acts as a unipolar resistive switch, demonstrating very high ON

Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth on MBE nanowires.

PubMed

Sanders, Aric; Blanchard, Paul; Bertness, Kris; Brubaker, Matthew; Dodson, Christopher; Harvey, Todd; Herrero, Andrew; Rourke, Devin; Schlager, John; Sanford, Norman; Chiaramonti, Ann N; Davydov, Albert; Motayed, Abhishek; Tsvetkov, Denis

2011-11-18

We present the homoepitaxial growth of p-type, magnesium doped gallium nitride shells by use of halide vapor phase epitaxy (HVPE) on n-type gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy (MBE). Scanning electron microscopy shows clear dopant contrast between the core and shell of the nanowire. The growth of magnesium doped nanowire shells shows little or no effect on the lattice parameters of the underlying nanowires, as measured by x-ray diffraction (XRD). Photoluminescence measurements of the nanowires show the appearance of sub-bandgap features in the blue and the ultraviolet, indicating the presence of acceptors. Finally, electrical measurements confirm the presence of electrically active holes in the nanowires.

Controllable 0–π Josephson junctions containing a ferromagnetic spin valve

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gingrich, E. C.; Niedzielski, Bethany M.; Glick, Joseph A.

Superconductivity and ferromagnetism are antagonistic forms of order, and rarely coexist. Many interesting new phenomena occur, however, in hybrid superconducting/ferromagnetic systems. For example, a Josephson junction containing a ferromagnetic material can exhibit an intrinsic phase shift of π in its ground state for certain thicknesses of the material. Such ‘π-junctions’ were first realized experimentally in 2001, and have been proposed as circuit elements for both high-speed classical superconducting computing and for quantum computing. Here we demonstrate experimentally that the phase state of a Josephson junction containing two ferromagnetic layers can be toggled between 0 and pi by changing the relativemore » orientation of the two magnetizations. These controllable 0–π junctions have immediate applications in cryogenic memory, where they serve as a necessary component to an ultralow power superconducting computer. Such a fully superconducting computer is estimated to be orders of magnitude more energy-efficient than current semiconductor-based supercomputers. Here, phase-controllable junctions also open up new possibilities for superconducting circuit elements such as superconducting ‘programmable logic’, where they could function in superconducting analogues to field-programmable gate arrays.« less

Controllable 0–π Josephson junctions containing a ferromagnetic spin valve

DOE PAGES

Gingrich, E. C.; Niedzielski, Bethany M.; Glick, Joseph A.; ...

2016-03-14

Superconductivity and ferromagnetism are antagonistic forms of order, and rarely coexist. Many interesting new phenomena occur, however, in hybrid superconducting/ferromagnetic systems. For example, a Josephson junction containing a ferromagnetic material can exhibit an intrinsic phase shift of π in its ground state for certain thicknesses of the material. Such ‘π-junctions’ were first realized experimentally in 2001, and have been proposed as circuit elements for both high-speed classical superconducting computing and for quantum computing. Here we demonstrate experimentally that the phase state of a Josephson junction containing two ferromagnetic layers can be toggled between 0 and pi by changing the relativemore » orientation of the two magnetizations. These controllable 0–π junctions have immediate applications in cryogenic memory, where they serve as a necessary component to an ultralow power superconducting computer. Such a fully superconducting computer is estimated to be orders of magnitude more energy-efficient than current semiconductor-based supercomputers. Here, phase-controllable junctions also open up new possibilities for superconducting circuit elements such as superconducting ‘programmable logic’, where they could function in superconducting analogues to field-programmable gate arrays.« less

Highly efficient and low voltage silver nanowire-based OLEDs employing a n-type hole injection layer.

PubMed

Lee, Hyungjin; Lee, Donghwa; Ahn, Yumi; Lee, Eun-Woo; Park, Lee Soon; Lee, Youngu

2014-08-07

Highly flexible and efficient silver nanowire-based organic light-emitting diodes (OLEDs) have been successfully fabricated by employing a n-type hole injection layer (HIL). The silver nanowire-based OLEDs without light outcoupling structures exhibited excellent device characteristics such as extremely low turn-on voltage (3.6 V) and high current and power efficiencies (44.5 cd A(-1) and 35.8 lm W(-1)). In addition, flexible OLEDs with the silver nanowire transparent conducting electrode (TCE) and n-type HIL fabricated on plastic substrates showed remarkable mechanical flexibility as well as device performance.

Advances in nanowire bioelectronics

NASA Astrophysics Data System (ADS)

Zhou, Wei; Dai, Xiaochuan; Lieber, Charles M.

2017-01-01

Semiconductor nanowires represent powerful building blocks for next generation bioelectronics given their attractive properties, including nanometer-scale footprint comparable to subcellular structures and bio-molecules, configurable in nonstandard device geometries readily interfaced with biological systems, high surface-to-volume ratios, fast signal responses, and minimum consumption of energy. In this review article, we summarize recent progress in the field of nanowire bioelectronics with a focus primarily on silicon nanowire field-effect transistor biosensors. First, the synthesis and assembly of semiconductor nanowires will be described, including the basics of nanowire FETs crucial to their configuration as biosensors. Second, we will introduce and review recent results in nanowire bioelectronics for biomedical applications ranging from label-free sensing of biomolecules, to extracellular and intracellular electrophysiological recording.

Duality picture of Superconductor-insulator transitions on Superconducting nanowire.

PubMed

Makise, Kazumasa; Terai, Hirotaka; Tominari, Yukihiro; Tanaka, Shukichi; Shinozaki, Bunju

2016-06-17

In this study, we investigated the electrical transport properties of niobium titanium nitride (NbTiN) nanowire with four-terminal geometries to clarify the superconducting phase slip phenomena and superconducting-insulator transitions (SIT) for one-dimensional superconductors. We fabricated various nanowires with different widths and lengths from epitaxial NbTiN films using the electron beam lithography method. The temperature dependence of resistance R(T) below the superconducting transition temperature Tc was analyzed using thermal activation phase slip (TAPS) and quantum phase slip (QPS) theories. Although the accuracy of experimental data at low temperatures can deviate when using the TAPS model, the QPS model thoroughly represents the R(T) characteristic with resistive tail at low temperatures. From the analyses of data on Tc, we found that NbTiN nanowires exhibit SIT because of the change in the ratio of kinetic inductance energy and QPS amplitude energy with respect to the flux-charge duality theory.

Engineering hybrid epitaxial InAsSb/Al nanowires for stronger topological protection

NASA Astrophysics Data System (ADS)

Sestoft, Joachim E.; Kanne, Thomas; Gejl, Aske Nørskov; von Soosten, Merlin; Yodh, Jeremy S.; Sherman, Daniel; Tarasinski, Brian; Wimmer, Michael; Johnson, Erik; Deng, Mingtang; Nygârd, Jesper; Jespersen, Thomas Sand; Marcus, Charles M.; Krogstrup, Peter

2018-04-01

The combination of strong spin-orbit coupling, large g factors, and the coupling to a superconductor can be used to create a topologically protected state in a semiconductor nanowire. Here we report on growth and characterization of hybrid epitaxial InAsSb/Al nanowires, with varying composition and crystal structure. We find the strongest spin-orbit interaction at intermediate compositions in zinc-blende InAs1 -xSbx nanowires, exceeding that of both InAs and InSb materials, confirming recent theoretical studies. We show that the epitaxial InAsSb/Al interface allows for a hard induced superconducting gap and 2 e transport in Coulomb charging experiments, similarly to experiments on InAs/Al and InSb/Al materials, and find measurements consistent with topological phase transitions at low magnetic fields due to large effective g factors. Finally we present a method to grow pure wurtzite InAsSb nanowires which are predicted to exhibit even stronger spin-orbit coupling than the zinc-blende structure.

Dynamic observation on the growth behaviors in manganese silicide/silicon nanowire heterostructures.

PubMed

Hsieh, Yu-Hsun; Chiu, Chung-Hua; Huang, Chun-Wei; Chen, Jui-Yuan; Lin, Wan-Jhen; Wu, Wen-Wei

2015-02-07

Metal silicide nanowires (NWs) are very interesting materials with diverse physical properties. Among the silicides, manganese silicide nanostructures have attracted wide attention due to their several potential applications, including in microelectronics, optoelectronics, spintronics and thermoelectric devices. In this work, we exhibited the formation of pure manganese silicide and manganese silicide/silicon nanowire heterostructures through solid state reaction with line contacts between manganese pads and silicon NWs. Dynamical process and phase characterization were investigated by in situ transmission electron microscopy (in situ TEM) and spherical aberration corrected scanning transmission electron microscopy (Cs-corrected STEM), respectively. The growth dynamics of the manganese silicide phase under thermal effects were systematically studied. Additionally, Al2O3, serving as the surface oxide, altered the growth behavior of the MnSi nanowire, enhancing the silicide/Si epitaxial growth and effecting the diffusion process in the silicon nanowire as well. In addition to fundamental science, this significant study has great potential in advancing future processing techniques in nanotechnology and related applications.

Electrodeposition of Rhodium Nanowires Arrays and Their Morphology-Dependent Hydrogen Evolution Activity

PubMed Central

Zhang, Liqiu; Liu, Lichun; Wang, Hongdan; Shen, Hongxia; Cheng, Qiong; Yan, Chao; Park, Sungho

2017-01-01

This work reports on the electrodeposition of rhodium (Rh) nanowires with a controlled surface morphology synthesized using an anodic aluminum oxide (AAO) template. Vertically aligned Rh nanowires with a smooth and coarse morphology were successfully deposited by adjusting the electrode potential and the concentration of precursor ions and by involving a complexing reagent in the electrolyte solution. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analyses were used to follow the morphological evolution of Rh nanowires. As a heterogeneous electrocatalyst for hydrogen evolution reactions (HER), the coarse Rh nanowire array exhibited an enhanced catalytic performance respect to smooth ones due to the larger surface area to mass ratio and the higher density of catalytically active defects, as evidenced by voltammetric measurements and TEM. Results suggest that the morphology of metallic nanomaterials could be readily engineered by electrodeposition. The controlled electrodeposition offers great potential for the development of an effective synthesis tool for heterogeneous catalysts with a superior performance for wide applications. PMID:28467375

Chip-to-chip SnO2 nanowire network sensors for room temperature H2 detection

NASA Astrophysics Data System (ADS)

Köck, A.; Brunet, E.; Mutinati, G. C.; Maier, T.; Steinhauer, S.

2012-06-01

The employment of nanowires is a very powerful strategy to improve gas sensor performance. We demonstrate a gas sensor device, which is based on silicon chip-to-chip synthesis of ultralong tin oxide (SnO2) nanowires. The sensor device employs an interconnected SnO2 nanowire network configuration, which exhibits a huge surface-to-volume ratio and provides full access of the target gas to the nanowires. The chip-to-chip SnO2 nanowire device is able to detect a H2 concentration of only 20 ppm in synthetic air with ~ 60% relative humidity at room temperature. At an operating temperature of 300°C a concentration of 50 ppm H2 results in a sensitivity of 5%. At this elevated temperature the sensor shows a linear response in a concentration range between 10 ppm and 100 ppm H2. The SnO2-nanowire fabrication procedure based on spray pyrolysis and subsequent annealing is performed at atmospheric pressure, requires no vacuum and allows upscale of the substrate to a wafer size. 3D-integration with CMOS chips is proposed as viable way for practical realization of smart nanowire based gas sensor devices for the consumer market.

Vapor Phase Synthesis of Organometal Halide Perovskite Nanowires for Tunable Room-Temperature Nanolasers.

PubMed

Xing, Jun; Liu, Xin Feng; Zhang, Qing; Ha, Son Tung; Yuan, Yan Wen; Shen, Chao; Sum, Tze Chien; Xiong, Qihua

2015-07-08

Semiconductor nanowires have received considerable attention in the past decade driven by both unprecedented physics derived from the quantum size effect and strong isotropy and advanced applications as potential building blocks for nanoscale electronics and optoelectronic devices. Recently, organic-inorganic hybrid perovskites have been shown to exhibit high optical absorption coefficient, optimal direct band gap, and long electron/hole diffusion lengths, leading to high-performance photovoltaic devices. Herein, we present the vapor phase synthesis free-standing CH3NH3PbI3, CH3NH3PbBr3, and CH3NH3PbIxCl3(-x) perovskite nanowires with high crystallinity. These rectangular cross-sectional perovskite nanowires have good optical properties and long electron hole diffusion length, which ensure adequate gain and efficient optical feedback. Indeed, we have demonstrated optical-pumped room-temperature CH3NH3PbI3 nanowire lasers with near-infrared wavelength of 777 nm, low threshold of 11 μJ/cm(2), and a quality factor as high as 405. Our research advocates the promise of optoelectronic devices based on organic-inorganic perovskite nanowires.

The preparation and cathodoluminescence of ZnS nanowires grown by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Huang, Meng-Wen; Cheng, Yin-Wei; Pan, Ko-Ying; Chang, Chen-Chuan; Shieu, F. S.; Shih, Han C.

2012-11-01

Single crystal ZnS nanowires were successfully synthesized in large quantities on Si (1 0 0) substrates by simple thermal chemical vapor deposition without using any catalyst. The morphology, composition, and crystal structure were characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), energy-dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), and cathodoluminescence (CL) spectroscopy. SEM observations show that the nanowires have diameters about 20-50 nm and lengths up to several tens of micrometers. XRD and TEM results confirmed that the nanowires exhibited both wurtzite and zinc blende structures with growth directions aligned along [0 0 0 2] and [1 1 1], respectively. The CL spectrum revealed emission bands in the UV and blue regions. The blue emissions at 449 and ˜581 nm were attributed to surface states and impurity-related defects of the nanowires, respectively. The perfect crystal structure of the nanowires indicates their potential applications in nanotechnology and in the fabrication of nanodevices.

Si-H induced synthesis of Si/Cu2O nanowire arrays for photoelectrochemical water splitting

NASA Astrophysics Data System (ADS)

Zhang, Shaoyang; She, Guangwei; Li, Shengyang; Mu, Lixuan; Shi, Wensheng

2018-01-01

We report a facile and low-cost method to synthesize Si/Cu2O heterojunction nanowire arrays, without SiOx, at the Si/Cu2O interface. The reductive Si-H bonds on the surface of Si nanowires plays a key role in situ by reducing Cu(II) ions to Cu2O nanocubes and avoiding the SiOx interface layer. Different pH values would vary the electrochemical potential of reactions and as a result, different products would be formed. Utilized as a photoanode for water splitting, Si/Cu2O nanowire arrays exhibit good photoelectrochemical performance.

Voltage control of ferromagnetic resonance

NASA Astrophysics Data System (ADS)

Zhou, Ziyao; Peng, Bin; Zhu, Mingmin; Liu, Ming

2016-05-01

Voltage control of magnetism in multiferroics, where the ferromagnetism and ferroelectricity are simultaneously exhibiting, is of great importance to achieve compact, fast and energy efficient voltage controllable magnetic/microwave devices. Particularly, these devices are widely used in radar, aircraft, cell phones and satellites, where volume, response time and energy consumption is critical. Researchers realized electric field tuning of magnetic properties like magnetization, magnetic anisotropy and permeability in varied multiferroic heterostructures such as bulk, thin films and nanostructure by different magnetoelectric (ME) coupling mechanism: strain/stress, interfacial charge, spin-electromagnetic (EM) coupling and exchange coupling, etc. In this review, we focus on voltage control of ferromagnetic resonance (FMR) in multiferroics. ME coupling-induced FMR change is critical in microwave devices, where the electric field tuning of magnetic effective anisotropic field determines the tunability of the performance of microwave devices. Experimentally, FMR measurement technique is also an important method to determine the small effective magnetic field change in small amount of magnetic material precisely due to its high sensitivity and to reveal the deep science of multiferroics, especially, voltage control of magnetism in novel mechanisms like interfacial charge, spin-EM coupling and exchange coupling.

High speed superconducting nanowire single-photon detector with nine interleaved nanowires

NASA Astrophysics Data System (ADS)

Huang, Jia; Zhang, Weijun; You, Lixing; Zhang, Chengjun; Lv, Chaolin; Wang, Yong; Liu, Xiaoyu; Li, Hao; Wang, Zhen

2018-07-01

Count rate (CR) is one of the key parameters of superconducting nanowire single-photon detectors (SNSPDs). The practical SNSPDs usually have a CR of a few MHz to a few tens of MHz owing to the large kinetic inductance originating from the long nanowire, which is necessary for effectively coupling the photons. A feasible approach to decrease the kinetic inductance and consequently increase the detection speed is to replace a long single nanowire with multiple individual nanowires in an array. In this study, we report an SNSPD of nine interleaved nanowires with 70% system detection efficiency (SDE) and 200 Hz dark count rate at the low-photon-flux limit of 1550 nm. Owing to the small dead time (<6 ns) of each nanowire, the SNSPD achieved a maximum CR of 0.93 GHz at a photon flux of 1.26 × 1010 photons s‑1 with an SDE of ∼7.4%, and a CR of 200 MHz with an SDE of over 50%. Furthermore, a photon number resolvability of up to nine photons was also demonstrated.

Self-assembled phase-change nanowire for nonvolatile electronic memory

NASA Astrophysics Data System (ADS)

Jung, Yeonwoong

One of the most important subjects in nanosciences is to identify and exploit the relationship between size and structural/physical properties of materials and to explore novel material properties at a small-length scale. Scale-down of materials is not only advantageous in realizing miniaturized devices but nanometer-sized materials often exhibit intriguing physical/chemical properties that greatly differ from their bulk counterparts. This dissertation studies self-assembled phase-change nanowires for future nonvolatile electronic memories, mainly focusing on their size-dependent memory switching properties. Owing to the one-dimensional, unique geometry coupled with the small and tunable sizes, bottom-designed nanowires offer great opportunities in terms for both fundamental science and practical engineering perspectives, which would be difficult to realize in conventional top-down based approaches. We synthesized chalcogenide phase-change nanowires of different compositions and sizes, and studied their electronic memory switching owing to the structural change between crystalline and amorphous phases. In particular, we investigated nanowire size-dependent memory switching parameters, including writing current, power consumption, and data retention times, as well as studying composition-dependent electronic properties. The observed size and composition-dependent switching and recrystallization kinetics are explained based on the heat transport model and heterogeneous nucleation theories, which help to design phase-change materials with better properties. Moreover, we configured unconventional heterostructured phase-change nanowire memories and studied their multiple memory states in single nanowire devices. Finally, by combining in-situ/ex-situ electron microscopy techniques and electrical measurements, we characterized the structural states involved in electrically-driven phase-change in order to understand the atomistic mechanism that governs the electronic

Self-assembled KCu7S4 nanowire monolayers for self-powered near-infrared photodetectors.

PubMed

Wang, You-Yi; Wu, Ya-Dong; Peng, Wei; Song, Yong-Hong; Wang, Bao; Wu, Chun-Yan; Lu, Yang

2018-06-13

Near infrared light (NIR) photodetectors based on one-dimensional semiconductor nanowires have generated considerable interest due to their practical application in versatile fields. We present a facile yet efficient approach to rationally integrating KCu7S4 semiconductor nanowires by the Langmuir-Blodgett (LB) technique. A self-powered near infrared (NIR) light photodetector is fabricated by transferring a close-packed KCu7S4 nanowire monolayer to the surface of a silicon wafer. The as-fabricated Si/KCu7S4 heterojunction with a close-packed and well-aligned nanowire array exhibits splendid photovoltaic performance when illuminated by NIR light, allowing the detection of NIR light without an exterior power supply. The photodetector exhibits a high sensitivity to NIR light (980 nm, 295.3 μW cm-2) with responsivity (R) 15 mA W-1 and detectivity (D*) 2.15 × 1012 cm Hz1/2 W-1. Significantly, the device shows the capability to work under high pulsed light irradiation up to 50 kHz with a high-speed response (response time τr 7.4 μs and recovery time τf 8.6 μs). This facilitates the fabrication of low-cost and high-speed photodetectors and integrated optoelectronic sensor circuitry.

Precise Placement of Metallic Nanowires on a Substrate by Localized Electric Fields and Inter-Nanowire Electrostatic Interaction

PubMed Central

2017-01-01

Placing nanowires at the predetermined locations on a substrate represents one of the significant hurdles to be tackled for realization of heterogeneous nanowire systems. Here, we demonstrate spatially-controlled assembly of a single nanowire at the photolithographically recessed region at the electrode gap with high integration yield (~90%). Two popular routes, such as protruding electrode tips and recessed wells, for spatially-controlled nanowire alignment, are compared to investigate long-range dielectrophoretic nanowire attraction and short-range nanowire-nanowire electrostatic interaction for determining the final alignment of attracted nanowires. Furthermore, the post-assembly process has been developed and tested to make a robust electrical contact to the assembled nanowires, which removes any misaligned ones and connects the nanowires to the underlying electrodes of circuit. PMID:29048363

A model study of tunneling conductance spectra of ferromagnetically ordered manganites

NASA Astrophysics Data System (ADS)

Panda, Saswati; Kar, J. K.; Rout, G. C.

2018-02-01

We report here the interplay of ferromagnetism (FM) and charge density wave (CDW) in manganese oxide systems through the study of tunneling conductance spectra. The model Hamiltonian consists of strong Heisenberg coupling in core t2g band electrons within mean-field approximation giving rise to ferromagnetism. Ferromagnetism is induced in the itinerant eg electrons due to Kubo-Ohata type double exchange (DE) interaction among the t2g and eg electrons. The charge ordering (CO) present in the eg band giving rise to CDW interaction is considered as the extra-mechanism to explain the colossal magnetoresistance (CMR) property of manganites. The magnetic and CDW order parameters are calculated using Zubarev's Green's function technique and solved self-consistently and numerically. The eg electron density of states (DOS) calculated from the imaginary part of the Green's function explains the experimentally observed tunneling conductance spectra. The DOS graph exhibits a parabolic gap near the Fermi energy as observed in tunneling conductance spectra experiments.

Ferromagnetism in the Hubbard Model with a Gapless Nearly-Flat Band

NASA Astrophysics Data System (ADS)

Tanaka, Akinori

2018-01-01

We present a version of the Hubbard model with a gapless nearly-flat lowest band which exhibits ferromagnetism in two or more dimensions. The model is defined on a lattice obtained by placing a site on each edge of the hypercubic lattice, and electron hopping is assumed to be only between nearest and next nearest neighbor sites. The lattice, where all the sites are identical, is simple, and the corresponding single-electron band structure, where two cosine-type bands touch without an energy gap, is also simple. We prove that the ground state of the model is unique and ferromagnetic at half-filling of the lower band, if the lower band is nearly flat and the strength of on-site repulsion is larger than a certain value which is independent of the lattice size. This is the first example of ferromagnetism in three dimensional non-singular models with a gapless band structure.

Fully solution processed PEDOT:PSS and silver nanowire semitransparent electrodes for thin film solar cells

NASA Astrophysics Data System (ADS)

Vaagensmith, Bjorn

Building integrated photovoltaics (BIPV), such as semitransparent organic solar cells (OSC) for power generating windows, is a promising method for implementing renewable energy under the looming threat of depleting fossil fuels. OSC require a solution processed transparent electrode to be cost effective; but typically employ a non-solution processed indium tin oxide (ITO) transparent electrode. PEDOT:PSS and silver nanowire transparent electrodes have emerged as a promising alternative to ITO and are solution processed compatible. However, PEDOT:PSS requires a strong acid treatment, which is incompatible with high throughput solution processed fabrication techniques. Silver nanowires suffer from a short lifetime when subject to electrical stress. The goals of this work were to fabricate a PEDOT:PSS electrodes without using strong acids, a silver nanowire electrode with a lifetime that can exceed 6000 hours of constant electrical stress, and use these two electrodes to fabricate a semitransparent OSC. Exploring optimal solvent blend additives in conjunction with solvent bend post treatments for PEDOT:PSS electrodes could provide an acid free method that results in comparable sheet resistance and transmittance of ITO electrodes. Silver nanowires fail under electrical stress due to sulfur corrosion and Joule heating (which melts and breaks apart electrical contact). A silver oxide layer coating the nanowires could hinder sulfur corrosion and help redistribute heat. Moreover, nanowires with thicker diameters could also exhibit higher heat tolerance and take longer to corrode. Four layer PEDOT:PSS electrodes with optimal solvent blend additives and post treatments were fabricated by spin coating. Silver nanowire electrodes of varying nanowire diameter with and without UV-ozone treatment were fabricated by spray coating and subject to electrical stress of 20 mA/cm2 constant current density. PEDOT:PSS electrodes exhibited a sheet resistance of 80 O/□ and average

Preparation and enhanced infrared response properties of ordered W-doped VO2 nanowire array

NASA Astrophysics Data System (ADS)

Xie, Bing He; Fu, Wen Biao; Fei, Guang Tao; Xu, Shao Hui; Gao, Xu Dong; Zhang, Li De

2018-04-01

In this article, pure and tungsten-doped (W-doped) highly ordered two-dimensional (2D) vanadium dioxide (VO2) nanowire arrays were successfully prepared by a hydrothermal treatment, followed by a self-assembly progress and the in-situ high temperature treatment. The infrared photodetector devices based on monoclinic VO2 (VO2(M)) and W-doped VO2(M) nanowires were comparatively studied . It was found that the device based on W-doped VO2(M) nanowires exhibits a rapid infrared response and an enhanced photoelectric responsivity of 21.4 mA/W under the incident infrared light intensity of 280 mW/cm2, which is nearly two orders of magnitude superior to pure VO2(M) nanowire array. Our experimental results provided a direct and convenient path for design of future high-performance photodetector devices.

Superwetting nanowire membranes for selective absorption.

PubMed

Yuan, Jikang; Liu, Xiaogang; Akbulut, Ozge; Hu, Junqing; Suib, Steven L; Kong, Jing; Stellacci, Francesco

2008-06-01

The construction of nanoporous membranes is of great technological importance for various applications, including catalyst supports, filters for biomolecule purification, environmental remediation and seawater desalination. A major challenge is the scalable fabrication of membranes with the desirable combination of good thermal stability, high selectivity and excellent recyclability. Here we present a self-assembly method for constructing thermally stable, free-standing nanowire membranes that exhibit controlled wetting behaviour ranging from superhydrophilic to superhydrophobic. These membranes can selectively absorb oils up to 20 times the material's weight in preference to water, through a combination of superhydrophobicity and capillary action. Moreover, the nanowires that form the membrane structure can be re-suspended in solutions and subsequently re-form the original paper-like morphology over many cycles. Our results suggest an innovative material that should find practical applications in the removal of organics, particularly in the field of oil spill cleanup.

Nanowire Thermoelectric Devices

NASA Technical Reports Server (NTRS)

Borshchevsky, Alexander; Fleurial, Jean-Pierre; Herman, Jennifer; Ryan, Margaret

2005-01-01

Nanowire thermoelectric devices, now under development, are intended to take miniaturization a step beyond the prior state of the art to exploit the potential advantages afforded by shrinking some device features to approximately molecular dimensions (of the order of 10 nm). The development of nanowire-based thermoelectric devices could lead to novel power-generating, cooling, and sensing devices that operate at relatively low currents and high voltages. Recent work on the theory of thermoelectric devices has led to the expectation that the performance of such a device could be enhanced if the diameter of the wires could be reduced to a point where quantum confinement effects increase charge-carrier mobility (thereby increasing the Seebeck coefficient) and reduce thermal conductivity. In addition, even in the absence of these effects, the large aspect ratios (length of the order of tens of microns diameter of the order of tens of nanometers) of nanowires would be conducive to the maintenance of large temperature differences at small heat fluxes. The predicted net effect of reducing diameters to the order of tens of nanometers would be to increase its efficiency by a factor of .3. Nanowires made of thermoelectric materials and devices that comprise arrays of such nanowires can be fabricated by electrochemical growth of the thermoelectric materials in templates that contain suitably dimensioned pores (10 to 100 nm in diameter and 1 to 100 microns long). The nanowires can then be contacted in bundles to form devices that look similar to conventional thermoelectric devices, except that a production version may contain nearly a billion elements (wires) per square centimeter, instead of fewer than a hundred as in a conventional bulk thermoelectric device or fewer than 100,000 as in a microdevice. It is not yet possible to form contacts with individual nanowires. Therefore, in fabricating a nanowire thermoelectric device, one forms contacts on nanowires in bundles of the

A Novel Nanowire Assembly Process for the Fabrication of CO Sensor

PubMed Central

Cheng, Biyao; Yang, Shuming; Liu, Tao; Vazinishayan, Ali

2018-01-01

Nanowires have been widely studied due to their outstanding mechanical and electrical properties; however, their practical applications are limited to the lack of an effective technique for controlled assembly. In the present work, zinc oxide (ZnO) nanowire arrays were assembled via a combing process using a makeup brush and the nanodevice was fabricated. The current–voltage (I–V) and ultraviolet (UV) characteristics of the device indicate stable and repeatable electrical properties. The carbon monoxide (CO) sensing properties were tested at operating temperatures of 200, 300 and 400 °C. It was found that ZnO based sensor exhibited the highest sensitivity to CO at 300 °C due to the change of dominant oxygen species. Comparing with others result, the sensitivity of the fabricated sensor exhibits higher sensing performance. The sensing mechanism of the CO sensor is also discussed. PMID:29673203

A Novel Nanowire Assembly Process for the Fabrication of CO Sensor.

PubMed

Cheng, Biyao; Yang, Shuming; Liu, Tao; Vazinishayan, Ali

2018-04-17

Nanowires have been widely studied due to their outstanding mechanical and electrical properties; however, their practical applications are limited to the lack of an effective technique for controlled assembly. In the present work, zinc oxide (ZnO) nanowire arrays were assembled via a combing process using a makeup brush and the nanodevice was fabricated. The current–voltage (I–V) and ultraviolet (UV) characteristics of the device indicate stable and repeatable electrical properties. The carbon monoxide (CO) sensing properties were tested at operating temperatures of 200, 300 and 400 °C. It was found that ZnO based sensor exhibited the highest sensitivity to CO at 300 °C due to the change of dominant oxygen species. Comparing with others result, the sensitivity of the fabricated sensor exhibits higher sensing performance. The sensing mechanism of the CO sensor is also discussed.

Strong Ferromagnetic Exchange Coupling Mediated by a Bridging Tetrazine Radical in a Dinuclear Nickel Complex.

PubMed

Woods, Toby J; Stout, Heather D; Dolinar, Brian S; Vignesh, Kuduva R; Ballesteros-Rivas, Maria F; Achim, Catalina; Dunbar, Kim R

2017-10-16

The radical bridged compound [(Ni(TPMA)) 2 -μ-bmtz •- ](BF 4 ) 3 ·3CH 3 CN (bmtz = 3,6-bis(2'-pyrimidyl)-1,2,4,5-tetrazine, TPMA = tris(2-pyridylmethyl)amine) exhibits strong ferromagnetic exchange between the S = 1 Ni II centers and the bridging S = 1/2 bmtz radical with J = 96 ± 5 cm -1 (-2J Ni-rad S Ni S rad ). DFT calculations support the existence of strong ferromagnetic exchange.

Highly effective field-effect mobility amorphous InGaZnO TFT mediated by directional silver nanowire arrays.

PubMed

Liu, Hung-Chuan; Lai, Yi-Chun; Lai, Chih-Chung; Wu, Bing-Shu; Zan, Hsiao-Wen; Yu, Peichen; Chueh, Yu-Lun; Tsai, Chuang-Chuang

2015-01-14

In this work, we demonstrate sputtered amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a record high effective field-effect mobility of 174 cm(2)/V s by incorporating silver nanowire (AgNW) arrays to channel electron transport. Compared to the reference counterpart without nanowires, the over 5-fold enhancement in the effective field-effect mobility exhibits clear dependence on the orientation as well as the surface coverage ratio of silver nanowires. Detailed material and device analyses reveal that during the room-temperature IGZO sputtering indium and oxygen diffuse into the nanowire matrix while the nanowire morphology and good contact between IGZO and nanowires are maintained. The unchanged morphology and good interfacial contact lead to high mobility and air-ambient-stable characteristics up to 3 months. Neither hysteresis nor degraded bias stress reliability is observed. The proposed AgNW-mediated a-IGZO TFTs are promising for development of large-scale, flexible, transparent electronics.

Mechanical Energy Harvesting Performance of Ferroelectric Polymer Nanowires Grown via Template‐Wetting

PubMed Central

Whiter, Richard A.; Boughey, Chess; Smith, Michael

2018-01-01

Abstract Nanowires of the ferroelectric co‐polymer poly(vinylidenefluoride‐co‐triufloroethylene) [P(VDF‐TrFE)] are fabricated from solution within nanoporous templates of both “hard” anodic aluminium oxide (AAO) and “soft” polyimide (PI) through a facile and scalable template‐wetting process. The confined geometry afforded by the pores of the templates leads directly to highly crystalline P(VDF‐TrFE) nanowires in a macroscopic “poled” state that precludes the need for external electrical poling procedure typically required for piezoelectric performance. The energy‐harvesting performance of nanogenerators based on these template‐grown nanowires are extensively studied and analyzed in combination with finite element modelling. Both experimental results and computational models probing the role of the templates in determining overall nanogenerator performance, including both materials and device efficiencies, are presented. It is found that although P(VDF‐TrFE) nanowires grown in PI templates exhibit a lower material efficiency due to lower crystallinity as compared to nanowires grown in AAO templates, the overall device efficiency was higher for the PI‐template‐based nanogenerator because of the lower stiffness of the PI template as compared to the AAO template. This work provides a clear framework to assess the energy conversion efficiency of template‐grown piezoelectric nanowires and paves the way towards optimization of template‐based nanogenerator devices.

Electrochemically synthesized amorphous and crystalline nanowires: dissimilar nanomechanical behavior in comparison with homologous flat films

NASA Astrophysics Data System (ADS)

Zeeshan, M. A.; Esqué-de Los Ojos, D.; Castro-Hartmann, P.; Guerrero, M.; Nogués, J.; Suriñach, S.; Baró, M. D.; Nelson, B. J.; Pané, S.; Pellicer, E.; Sort, J.

2016-01-01

The effects of constrained sample dimensions on the mechanical behavior of crystalline materials have been extensively investigated. However, there is no clear understanding of these effects in nano-sized amorphous samples. Herein, nanoindentation together with finite element simulations are used to compare the properties of crystalline and glassy CoNi(Re)P electrodeposited nanowires (φ ~ 100 nm) with films (3 μm thick) of analogous composition and structure. The results reveal that amorphous nanowires exhibit a larger hardness, lower Young's modulus and higher plasticity index than glassy films. Conversely, the very large hardness and higher Young's modulus of crystalline nanowires are accompanied by a decrease in plasticity with respect to the homologous crystalline films. Remarkably, proper interpretation of the mechanical properties of the nanowires requires taking the curved geometry of the indented surface and sink-in effects into account. These findings are of high relevance for optimizing the performance of new, mechanically-robust, nanoscale materials for increasingly complex miniaturized devices.The effects of constrained sample dimensions on the mechanical behavior of crystalline materials have been extensively investigated. However, there is no clear understanding of these effects in nano-sized amorphous samples. Herein, nanoindentation together with finite element simulations are used to compare the properties of crystalline and glassy CoNi(Re)P electrodeposited nanowires (φ ~ 100 nm) with films (3 μm thick) of analogous composition and structure. The results reveal that amorphous nanowires exhibit a larger hardness, lower Young's modulus and higher plasticity index than glassy films. Conversely, the very large hardness and higher Young's modulus of crystalline nanowires are accompanied by a decrease in plasticity with respect to the homologous crystalline films. Remarkably, proper interpretation of the mechanical properties of the nanowires

MOCVD growth and characterization of gallium nitride and gallium antimonide nanowires

NASA Astrophysics Data System (ADS)

Burke, Robert Alan

Group-III nitride and group-III antimonide thin films have been used for years in optoelectronic, high-speed applications, and high power/high temperature applications such as light emitting diodes (LEDs), microwave power devices, and thermovoltaics. In recent years, nanowires have gained interest due to the ability to take advantage of their geometry for increased light absorption and the synthesis of radial heterostructures. Several growth techniques have been explored for the growth of GaN and GaSb nanowires. Metal-organic chemical vapor deposition (MOCVD) is of particular interest due to its use in the commercial growth and fabrication of GaN-based and GaSb-based devices. The first part of this thesis focused on addressing several key issues related to the growth of GaN nanowires by MOCVD. Preliminary studies investigated the effect of growth conditions on GaN nanowire formation in a hot wall MOCVD reactor. A computational fluid dynamics-based model was developed to predict the gas phase velocity, temperature and concentration profiles in the reactor. The results demonstrate a strong dependence of GaN nanowire growth on substrate position within the reactor which is due to the rapid reaction and depletion of precursors near the gas inlet of the reactor. Ni-catalyzed GaN nanowire growth was observed to occur over the temperature range of 800-900°C, which is significantly lower than typical GaN thin film temperatures. The nanowires, however, exhibited a tapered diameter due to thin film deposition which occurred simultaneously with nanowire growth. Based on the low growth temperatures, TEM characterization was carried out to investigate the nature of the catalyst. Through these studies, the catalyst was found to consist of Ni3Ga, indicating the presence of a vapor-solid-solid growth mechanism. In an attempt to improve the nanowire growth selectivity, GeCl4 was added during growth resulting in a drastic increase in nanowire density and a reduction in the tapering

III-Nitride Nanowire Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wright, Jeremy Benjamin

2014-07-01

In recent years there has been a tremendous interest in nanoscale optoelectronic devices. Among these devices are semiconductor nanowires whose diameters range from 10-100 nm. To date, nanowires have been grown using many semiconducting material systems and have been utilized as light emitting diodes, photodetectors, and solar cells. Nanowires possess a relatively large index contrast relative to their dielectric environment and can be used as lasers. A key gure of merit that allows for nanowire lasing is the relatively high optical con nement factor. In this work, I discuss the optical characterization of 3 types of III-nitride nanowire laser devices.more » Two devices were designed to reduce the number of lasing modes to achieve singlemode operation. The third device implements low-group velocity mode lasing with a photonic crystal constructed of an array of nanowires. Single-mode operation is necessary in any application where high beam quality and single frequency operation is required. III-Nitride nanowire lasers typically operate in a combined multi-longitudinal and multi-transverse mode state. Two schemes are introduced here for controlling the optical modes and achieving single-mode op eration. The rst method involves reducing the diameter of individual nanowires to the cut-o condition, where only one optical mode propagates in the wire. The second method employs distributed feedback (DFB) to achieve single-mode lasing by placing individual GaN nanowires onto substrates with etched gratings. The nanowire-grating substrate acted as a distributed feedback mirror producing single mode operation at 370 nm with a mode suppression ratio (MSR) of 17 dB. The usage of lasers for solid state lighting has the potential to further reduce U.S. lighting energy usage through an increase in emitter e ciency. Advances in nanowire fabrication, speci cally a two-step top-down approach, have allowed for the demonstration of a multi-color array of lasers on a single chip that

Size- and pressure-controlled ferromagnetism in LaCoO3 nanoparticles

NASA Astrophysics Data System (ADS)

Fita, I.; Markovich, V.; Mogilyansky, D.; Puzniak, R.; Wisniewski, A.; Titelman, L.; Vradman, L.; Herskowitz, M.; Varyukhin, V. N.; Gorodetsky, G.

2008-06-01

Magnetic properties of nanocrystalline LaCoO3 with particle size of 25, 30, 32, and 38 nm, prepared by the citrate method, were investigated in temperature range 2-320 K, magnetic field up to 50 kOe, and under hydrostatic pressure up to 11 kbar. All nanoparticles exhibit weak ferromagnetism below TC≈85K , in agreement with recent observation on LaCoO3 particles and tensile thin films. It was found that with decreasing particle size, i.e., with increasing the surface to volume ratio, the unit-cell volume increases monotonically due to the surface effect. The ferromagnetic moment increases as well, simultaneously with lattice expansion, whereas TC remains nearly unchanged. On the other hand, an applied hydrostatic pressure suppresses strongly the ferromagnetic phase leading to its full disappearance at 10 kbar, while the TC does not change visibly under pressure. It appears that the ferromagnetism in LaCoO3 nanoparticles is controlled by the unit-cell volume. This clear correlation suggests that the nature of ferromagnetic ground state of LaCoO3 is likely related to orbitally ordered Jahn-Teller active Co3+ ions with intermediate-spin (IS) state, which may persist in the expanded lattice at low temperatures. A robust orbital order presumed among the IS Co3+ species can explain the very stable TC observed for LaCoO3 samples prepared under different conditions: single crystal powders, nanoparticles, and thin films.

CuO nanowire/microflower/nanowire modified Cu electrode with enhanced electrochemical performance for non-enzymatic glucose sensing.

PubMed

Li, Changli; Yamahara, Hiroyasu; Lee, Yaerim; Tabata, Hitoshi; Delaunay, Jean-Jacques

2015-07-31

CuO nanowire/microflower structure on Cu foil is synthesized by annealing a Cu(OH)2 nanowire/CuO microflower structure at 250 °C in air. The nanowire/microflower structure with its large surface area leads to an efficient catalysis and charge transfer in glucose detection, achieving a high sensitivity of 1943 μA mM(-1) cm(-2), a wide linear range up to 4 mM and a low detection limit of 4 μM for amperometric glucose sensing in alkaline solution. With a second consecutive growth of CuO nanowires on the microflowers, the sensitivity of the obtained CuO nanowire/microflower/nanowire structure further increases to 2424 μA mM(-1) cm(-2), benefiting from an increased number of electrochemically active sites. The enhanced electrocatalytic performance of the CuO nanowire/microflower/nanowire electrode compared to the CuO nanowire/microflower electrode, CuO nanowire electrode and CuxO film electrode provides evidence for the significant role of available surface area for electrocatalysis. The rational combination of CuO nanowire and microflower nanostructures into a nanowire supporting microflower branching nanowires structure makes it a promising composite nanostructure for use in CuO based electrochemical sensors with promising analytical properties.

Electronic transport with dielectric confinement in degenerate InN nanowires.

PubMed

Blömers, Ch; Lu, J G; Huang, L; Witte, C; Grützmacher, D; Lüth, H; Schäpers, Th

2012-06-13

In this Letter, we present the size effects on charge conduction in InN nanowires by comprehensive transport studies supported by theoretical analysis. A consistent model for highly degenerate narrow gap semiconductor nanowires is developed. In contrast to common knowledge of InN, there is no evidence of an enhanced surface conduction, however, high intrinsic doping exists. Furthermore, the room-temperature resistivity exhibits a strong increase when the lateral size becomes smaller than 80 nm and the temperature dependence changes from metallic to semiconductor-like. This effect is modeled by donor deactivation due to dielectric confinement, yielding a shift of the donor band to higher ionization energies as the size shrinks.

Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors

PubMed Central

Anyebe, Ezekiel A.; Sandall, I.; Jin, Z. M.; Sanchez, Ana M.; Rajpalke, Mohana K.; Veal, Timothy D.; Cao, Y. C.; Li, H. D.; Harvey, R.; Zhuang, Q. D.

2017-01-01

The recent discovery of flexible graphene monolayers has triggered extensive research interest for the development of III-V/graphene functional hybrid heterostructures. In order to fully exploit their enormous potential in device applications, it is essential to optimize epitaxial growth for the precise control of nanowire geometry and density. Herein, we present a comprehensive growth study of InAs nanowires on graphitic substrates by molecular beam epitaxy. Vertically well-aligned and thin InAs nanowires with high yield were obtained in a narrow growth temperature window of 420–450 °C within a restricted domain of growth rate and V/III flux ratio. The graphitic substrates enable high nanowire growth rates, which is favourable for cost-effective device fabrication. A relatively low density of defects was observed. We have also demonstrated InAs-NWs/graphite heterojunction devices exhibiting rectifying behaviour. Room temperature photovoltaic response with a cut-off wavelength of 3.4 μm was demonstrated. This elucidates a promising route towards the monolithic integration of InAs nanowires with graphite for flexible and functional hybrid devices. PMID:28393845

Controlled Synthesis of Pt Nanowires with Ordered Large Mesopores for Methanol Oxidation Reaction

NASA Astrophysics Data System (ADS)

Zhang, Chengwei; Xu, Lianbin; Yan, Yushan; Chen, Jianfeng

2016-08-01

Catalysts for methanol oxidation reaction (MOR) are at the heart of key green-energy fuel cell technology. Nanostructured Pt materials are the most popular and effective catalysts for MOR. Controlling the morphology and structure of Pt nanomaterials can provide opportunities to greatly increase their activity and stability. Ordered nanoporous Pt nanowires with controlled large mesopores (15, 30 and 45 nm) are facilely fabricated by chemical reduction deposition from dual templates using porous anodic aluminum oxide (AAO) membranes with silica nanospheres self-assembled in the channels. The prepared mesoporous Pt nanowires are highly active and stable electrocatalysts for MOR. The mesoporous Pt nanowires with 15 nm mesopores exhibit a large electrochemically active surface area (ECSA, 40.5 m2 g-1), a high mass activity (398 mA mg-1) and specific activity (0.98 mA cm-2), and a good If/Ib ratio (1.15), better than the other mesoporous Pt nanowires and the commercial Pt black catalyst.

Nitrogen and Fluorine-Codoped Carbon Nanowire Aerogels as Metal-Free Electrocatalysts for Oxygen Reduction Reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fu, Shaofang; Zhu, Chengzhou; Song, Junhua

2017-07-11

The development of active, durable, and low-cost catalysts to replace noble metal-based materials is highly desirable to promote the sluggish oxygen reduction reaction in fuel cells. Herein, nitrogen and fluorine-codoped three-dimensional carbon nanowire aerogels, composed of interconnected carbon nanowires, were synthesized for the first time by a hydrothermal carbonization process. Owing to their porous nanostructures and heteroatom-doping, the as-prepared carbon nanowire aerogels, with optimized composition, present excellent electrocatalytic activity that is comparable to commercial Pt/C. Remarkably, the aerogels also exhibit superior stability and methanol tolerance. This synthesis procedure paves a new way to design novel heteroatomdoped catalysts.

Porous Silicon Nanowires

PubMed Central

Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

2011-01-01

In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

Magnetic enhancement of ferroelectric polarization in a self-grown ferroelectric-ferromagnetic composite

NASA Astrophysics Data System (ADS)

Kumar, Amit; Narayan, Bastola; Pachat, Rohit; Ranjan, Rajeev

2018-02-01

Ferroelectric-ferromagnetic multiferroic composites are of great interest both from the scientific and technological standpoints. The extent of coupling between polarization and magnetization in such two-phase systems depends on how efficiently the magnetostrictive and electrostrictive/piezoelectric strain gets transferred from one phase to the other. This challenge is most profound in the easy to make 0-3 ferroelectric-ferromagnetic particulate composites. Here we report a self-grown ferroelectric-ferromagnetic 0-3 particulate composite through controlled spontaneous precipitation of ferrimagnetic barium hexaferrite phase (BaF e12O19 ) amid ferroelectric grains in the multiferroic alloy system BiFe O3-BaTi O3 . We demonstrate that a composite specimen exhibiting merely ˜1% hexaferrite phase exhibits ˜34% increase in saturation polarization in a dc magnetic field of ˜10 kOe. Using modified Rayleigh analysis of the polarization field loop in the subcoercive field region we argue that the substantial enhancement in the ferroelectric switching is associated with the reduction in the barrier heights of the pinning centers of the ferroelectric-ferroelastic domain walls in the stress field generated by magnetostriction in the hexaferrite grains when the magnetic field is turned on. Our study proves that controlled precipitation of the magnetic phase is a good strategy for synthesis of 0-3 ferroelectric-ferromagnetic particulate multiferroic composite as it not only helps in ensuring a good electrical insulating character of the composite, enabling it to sustain high enough electric field for ferroelectric switching, but also the factors associated with the spontaneity of the precipitation process ensure efficient transfer of the magnetostrictive strain/stress to the surrounding ferroelectric matrix making domain wall motion easy.

Transient analysis of spectrally asymmetric magnetic photonic crystals with ferromagnetic losses

NASA Astrophysics Data System (ADS)

Jung, K.-Y.; Donderici, B.; Teixeira, F. L.

2006-10-01

We analyze transient electromagnetic pulse propagation in spectrally asymmetric magnetic photonic crystals (MPCs) with ferromagnetic losses. MPCs are dispersion-engineered materials consisting of a periodic arrangement of misaligned anisotropic dielectric and ferromagnetic layers that exhibit a stationary inflection point in the (asymmetric) dispersion diagram and unidirectional frozen modes. The analysis is performed via a late-time stable finite-difference time-domain method (FDTD) implemented with perfectly matched layer (PML) absorbing boundary conditions, and extended to handle (simultaneously) dispersive and anisotropic media. The proposed PML-FDTD algorithm is based on a D - H and B - E combined field approach that naturally decouples the FDTD update into two steps, one involving the (anisotropic and dispersive) constitutive material tensors and the other involving Maxwell’s equations in a complex coordinate space (to incorporate the PML). For ferromagnetic layers, a fully dispersive modeling of the permeability tensor is implemented to include magnetic losses in a consistent fashion. The numerical results illustrate some striking properties of MPCs, such as wave slowdown (frozen modes), amplitude increase (pulse compression), and unidirectional characteristics. The numerical model is also used to investigate the sensitivity of the MPC response against excitation (frequency and bandwidth), material (ferromagnetic losses), and geometric (layer misalignment and thickness) parameter variations.

A graphene/single GaAs nanowire Schottky junction photovoltaic device.

PubMed

Luo, Yanbin; Yan, Xin; Zhang, Jinnan; Li, Bang; Wu, Yao; Lu, Qichao; Jin, Chenxiaoshuai; Zhang, Xia; Ren, Xiaomin

2018-05-17

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

Dominant Majorana bound energy and critical current enhancement in ferromagnetic-superconducting topological insulator

NASA Astrophysics Data System (ADS)

Khezerlou, Maryam; Goudarzi, Hadi; Asgarifar, Samin

2017-03-01

Among the potential applications of topological insulators, we theoretically study the coexistence of proximity-induced ferromagnetic and superconducting orders in the surface states of a 3-dimensional topological insulator. The superconducting electron-hole excitations can be significantly affected by the magnetic order induced by a ferromagnet. In one hand, the surface state of the topological insulator, protected by the time-reversal symmetry, creates a spin-triplet and, on the other hand, magnetic order causes to renormalize the effective superconducting gap. We find Majorana mode energy along the ferromagnet/superconductor interface to sensitively depend on the magnitude of magnetization m zfs from superconductor region, and its slope around perpendicular incidence is steep with very low dependency on m zfs . The superconducting effective gap is renormalized by a factor η( m zfs ), and Andreev bound state in ferromagnet-superconductor/ferromagnet/ferromagnet-superconductor (FS/F/FS) Josephson junction is more sensitive to the magnitude of magnetizations of FS and F regions. In particular, we show that the presence of m zfs has a noticeable impact on the gap opening in Andreev bound state, which occurs in finite angle of incidence. This directly results in zero-energy Andreev state being dominant. By introducing the proper form of corresponding Dirac spinors for FS electron-hole states, we find that via the inclusion of m zfs , the Josephson supercurrent is enhanced and exhibits almost abrupt crossover curve, featuring the dominant zero-energy Majorana bound states.

Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

PubMed

Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

2018-05-09

III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

Biased Target Ion Beam Deposition and Nanoskiving for Fabricating NiTi Alloy Nanowires

NASA Astrophysics Data System (ADS)

Hou, Huilong; Horn, Mark W.; Hamilton, Reginald F.

2016-12-01

Nanoskiving is a novel nanofabrication technique to produce shape memory alloy nanowires. Our previous work was the first to successfully fabricate NiTi alloy nanowires using the top-down approach, which leverages thin film technology and ultramicrotomy for ultra-thin sectioning. For this work, we utilized biased target ion beam deposition technology to fabricate nanoscale (i.e., sub-micrometer) NiTi alloy thin films. In contrast to our previous work, rapid thermal annealing was employed for heat treatment, and the B2 austenite to R-phase martensitic transformation was confirmed using stress-temperature and diffraction measurements. The ultramicrotome was programmable and facilitated sectioning the films to produce nanowires with thickness-to-width ratios ranging from 4:1 to 16:1. Energy dispersive X-ray spectroscopy analysis confirmed the elemental Ni and Ti make-up of the wires. The findings exposed the nanowires exhibited a natural ribbon-like curvature, which depended on the thickness-to-width ratio. The results demonstrate nanoskiving is a potential nanofabrication technique for producing NiTi alloy nanowires that are continuous with an unprecedented length on the order of hundreds of micrometers.

Comparative study of ferromagnetic and non-ferromagnetic modifications of TDAE-C60

NASA Astrophysics Data System (ADS)

Arčon, D.; Blinc, R.; Cevc, P.; Omerzu, A.; Mihailovič, D.

1999-09-01

The magnetic properties of two different modifications of TDAE-C60 have been studied with the ESR and 1H NMR. Well-annealed single crystals display a transition to a ferromagnetically ordered state as confirmed by the observation of the ferromagnetic resonance. On the other hand the magnetic ground state of the non-ferromagnetic modification is consistent with the singlet ground state. The gap between the singlet and low laying triplet excited state opens below 11 K and reaches about 15 K at 5 K. A possible structural differences and their impact on the observed magnetic properties of the two modifications are discussed.

A facile strategy to decorate Cu₉S₅ nanocrystals on polyaniline nanowires and their synergetic catalytic properties.

PubMed

Lu, Xiao-feng; Bian, Xiu-jie; Li, Zhi-cheng; Chao, Dan-ming; Wang, Ce

2013-10-16

Here, we demonstrated a novel method to decorate Cu₉S₅ nanocrystals on polyaniline (PANI) nanowires using the dopant of mercaptoacetic acid (MAA) in the PANI matrix as the sulfur source under a hydrothermal reaction. TEM images showed that Cu₉S₅ nanocrystals with a size in the range of 5-20 nm were uniformly formed on the surface of PANI nanowires. Significantly, the as-prepared PANI/Cu₉S₅ composite nanowires have been proven to be novel peroxidase mimics toward the oxidation of the peroxidase substrate 3,3',5,5'-tetramethylbenzidine (TMB) in the presence of H₂O₂. Due to the synergetic effects between polyaniline nanowires and Cu₉S₅ nanocrystals, the obtained PANI/Cu₉S₅ composite nanowires exhibit superior catalytic activity over the independent components. This work not only presents a simple and versatile method to decorate semiconductor nanocrystals on the surface of conducting polymer nanostructures, but also provides fundamental guidelines for further investigations into the synergetic effect between conducting polymers and other materials.

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures.

PubMed

Hu, Zhongqiang; Wang, Xinjun; Nan, Tianxiang; Zhou, Ziyao; Ma, Beihai; Chen, Xiaoqin; Jones, John G; Howe, Brandon M; Brown, Gail J; Gao, Yuan; Lin, Hwaider; Wang, Zhiguang; Guo, Rongdi; Chen, Shuiyuan; Shi, Xiaoling; Shi, Wei; Sun, Hongzhi; Budil, David; Liu, Ming; Sun, Nian X

2016-09-01

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices.

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

PubMed Central

Hu, Zhongqiang; Wang, Xinjun; Nan, Tianxiang; Zhou, Ziyao; Ma, Beihai; Chen, Xiaoqin; Jones, John G.; Howe, Brandon M.; Brown, Gail J.; Gao, Yuan; Lin, Hwaider; Wang, Zhiguang; Guo, Rongdi; Chen, Shuiyuan; Shi, Xiaoling; Shi, Wei; Sun, Hongzhi; Budil, David; Liu, Ming; Sun, Nian X.

2016-01-01

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices. PMID:27581071

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

NASA Astrophysics Data System (ADS)

Hu, Zhongqiang; Wang, Xinjun; Nan, Tianxiang; Zhou, Ziyao; Ma, Beihai; Chen, Xiaoqin; Jones, John G.; Howe, Brandon M.; Brown, Gail J.; Gao, Yuan; Lin, Hwaider; Wang, Zhiguang; Guo, Rongdi; Chen, Shuiyuan; Shi, Xiaoling; Shi, Wei; Sun, Hongzhi; Budil, David; Liu, Ming; Sun, Nian X.

2016-09-01

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices.

Quantum optics with nanowires (Conference Presentation)

NASA Astrophysics Data System (ADS)

Zwiller, Val

2017-02-01

Nanowires offer new opportunities for nanoscale quantum optics; the quantum dot geometry in semiconducting nanowires as well as the material composition and environment can be engineered with unprecedented freedom to improve the light extraction efficiency. Quantum dots in nanowires are shown to be efficient single photon sources, in addition because of the very small fine structure splitting, we demonstrate the generation of entangled pairs of photons from a nanowire. By doping a nanowire and making ohmic contacts on both sides, a nanowire light emitting diode can be obtained with a single quantum dot as the active region. Under forward bias, this will act as an electrically pumped source of single photons. Under reverse bias, an avalanche effect can multiply photocurrent and enables the detection of single photons. Another type of nanowire under study in our group is superconducting nanowires for single photon detection, reaching efficiencies, time resolution and dark counts beyond currently available detectors. We will discuss our first attempts at combining semiconducting nanowire based single photon emitters and superconducting nanowire single photon detectors on a chip to realize integrated quantum circuits.

Nanowire nanocomputer as a finite-state machine.

PubMed

Yao, Jun; Yan, Hao; Das, Shamik; Klemic, James F; Ellenbogen, James C; Lieber, Charles M

2014-02-18

Implementation of complex computer circuits assembled from the bottom up and integrated on the nanometer scale has long been a goal of electronics research. It requires a design and fabrication strategy that can address individual nanometer-scale electronic devices, while enabling large-scale assembly of those devices into highly organized, integrated computational circuits. We describe how such a strategy has led to the design, construction, and demonstration of a nanoelectronic finite-state machine. The system was fabricated using a design-oriented approach enabled by a deterministic, bottom-up assembly process that does not require individual nanowire registration. This methodology allowed construction of the nanoelectronic finite-state machine through modular design using a multitile architecture. Each tile/module consists of two interconnected crossbar nanowire arrays, with each cross-point consisting of a programmable nanowire transistor node. The nanoelectronic finite-state machine integrates 180 programmable nanowire transistor nodes in three tiles or six total crossbar arrays, and incorporates both sequential and arithmetic logic, with extensive intertile and intratile communication that exhibits rigorous input/output matching. Our system realizes the complete 2-bit logic flow and clocked control over state registration that are required for a finite-state machine or computer. The programmable multitile circuit was also reprogrammed to a functionally distinct 2-bit full adder with 32-set matched and complete logic output. These steps forward and the ability of our unique design-oriented deterministic methodology to yield more extensive multitile systems suggest that proposed general-purpose nanocomputers can be realized in the near future.

Nanowire nanocomputer as a finite-state machine

PubMed Central

Yao, Jun; Yan, Hao; Das, Shamik; Klemic, James F.; Ellenbogen, James C.; Lieber, Charles M.

2014-01-01

Implementation of complex computer circuits assembled from the bottom up and integrated on the nanometer scale has long been a goal of electronics research. It requires a design and fabrication strategy that can address individual nanometer-scale electronic devices, while enabling large-scale assembly of those devices into highly organized, integrated computational circuits. We describe how such a strategy has led to the design, construction, and demonstration of a nanoelectronic finite-state machine. The system was fabricated using a design-oriented approach enabled by a deterministic, bottom–up assembly process that does not require individual nanowire registration. This methodology allowed construction of the nanoelectronic finite-state machine through modular design using a multitile architecture. Each tile/module consists of two interconnected crossbar nanowire arrays, with each cross-point consisting of a programmable nanowire transistor node. The nanoelectronic finite-state machine integrates 180 programmable nanowire transistor nodes in three tiles or six total crossbar arrays, and incorporates both sequential and arithmetic logic, with extensive intertile and intratile communication that exhibits rigorous input/output matching. Our system realizes the complete 2-bit logic flow and clocked control over state registration that are required for a finite-state machine or computer. The programmable multitile circuit was also reprogrammed to a functionally distinct 2-bit full adder with 32-set matched and complete logic output. These steps forward and the ability of our unique design-oriented deterministic methodology to yield more extensive multitile systems suggest that proposed general-purpose nanocomputers can be realized in the near future. PMID:24469812

The Intrinsic Ferromagnetism in a MnO2 Monolayer.

PubMed

Kan, M; Zhou, J; Sun, Q; Kawazoe, Y; Jena, P

2013-10-17

The Mn atom, because of its special electronic configuration of 3d(5)4s(2), has been widely used as a dopant in various two-dimensional (2D) monolayers such as graphene, BN, silicene and transition metal dichalcogenides (TMDs). The distributions of doped Mn atoms in these systems are highly sensitive to the synthesis process and conditions, thus suffering from problems of low solubility and surface clustering. Here we show for the first time that the MnO2 monolayer, synthetized 10 years ago, where Mn ions are individually held at specific sites, exhibits intrinsic ferromagnetism with a Curie temperature of 140 K, comparable to the highest TC value achieved experimentally for Mn-doped GaAs. The well-defined atomic configuration and the intrinsic ferromagnetism of the MnO2 monolayer suggest that it is superior to other magnetic monolayer materials.

Magnetic Exchange Coupling in Ferromagnetic/Superconducting/Ferromagnetic Multilayers

NASA Astrophysics Data System (ADS)

de Melo, C. A. R. Sa

2001-03-01

The possibility of magnetic exchange coupling between ferromagnets (F) separated by superconductor (S) spacers in F/S/F multilayers is analysed theoretically [1,2]. Ideal systems for the observation of magnetic coupling through superconductors are complex oxide multilayers consisting of Colossal Magneto-Resistance (CMR) Ferromagnets and High Critical Temperature Cuprate Superconductors. For this coupling to occur, three "prima facie" conditions need to be satisfied. First, an indirect exchange coupling between the ferromagnets must exist when the superconductor is in its normal state. Second, superconductivity must not be destroyed due to the proximity of ferromagnetic boundaries. Third, roughness of the F/S interfaces must be small. Under these conditions, when the superconductor is cooled below its critical temperature T_c, the magnetic coupling changes. The appearance of the superconducting gap introduces a new length scale (the coherence length of the superconductor) and modifies the temperature dependence of the indirect exchange coupling existent in the normal state. The magnetic coupling is oscillatory both above and below T_c, as well as strongly temperature-dependent. However at low temperatures the indirect exchange coupling decay length is controlled by the coherence length of the superconductor, while at temperatures close to and above Tc the magnetic coupling decay length is controlled by the thermal length. [I would like to thank the Georgia Institute of Technology, NSF (Grant No. DMR-9803111) and NATO (Grant No. CRG-972261) for financial support.] [1] C. A. R. Sa de Melo, Phys. Rev. Lett. 79, 1933 (1997). [2] C. A. R. Sa de Melo, Phys. Rev. B 62, 12303 (2000).

Piezoresistive boron doped diamond nanowire

DOEpatents

Sumant, Anirudha V.; Wang, Xinpeng

2017-07-04

A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.

Piezoresistive boron doped diamond nanowire

DOEpatents

Sumant, Anirudha V.; Wang, Xinpeng

2016-09-13

A UNCD nanowire comprises a first end electrically coupled to a first contact pad which is disposed on a substrate. A second end is electrically coupled to a second contact pad also disposed on the substrate. The UNCD nanowire is doped with a dopant and disposed over the substrate. The UNCD nanowire is movable between a first configuration in which no force is exerted on the UNCD nanowire and a second configuration in which the UNCD nanowire bends about the first end and the second end in response to a force. The UNCD nanowire has a first resistance in the first configuration and a second resistance in the second configuration which is different from the first resistance. The UNCD nanowire is structured to have a gauge factor of at least about 70, for example, in the range of about 70 to about 1,800.

Proposed model for bistability in nanowire nonvolatile memory

NASA Astrophysics Data System (ADS)

Pokalyakin, V.; Tereshin, S.; Varfolomeev, A.; Zaretsky, D.; Baranov, A.; Banerjee, A.; Wang, Y.; Ramanathan, S.; Bandyopadhyay, S.

2005-06-01

Cadmium sulfide nanowires of 10-nm diameter, electrodeposited in porous anodic alumina films, exhibit an electronic bistability that can be harnessed for nonvolatile memory. The current-voltage characteristics of the wires show two stable conductance states that are well separated (conductances differ by more than four orders of magnitude) and long lived (longevity>1yr at room temperature). These two states can encode binary bits 0 and 1. It is possible to switch between them by varying the voltage across the wires, thus "writing" data. Transport behavior of this system has been investigated at different temperatures in an effort to understand the origin of bistability, and a model is presented to explain the observed features. Based on this model, we estimate that about 40 trapped electrons per nanowire are responsible for the bistability.

Gate-tunable transport characteristics of Bi2S3 nanowire transistors

NASA Astrophysics Data System (ADS)

Kilcoyne, Colin; Ali, Ahmed H.; Alsaqqa, Ali M.; Rahman, Ajara A.; Whittaker-Brooks, Luisa; Sambandamurthy, Ganapathy

2018-02-01

Electrical transport and resistance noise spectroscopy measurements are performed on individual, single crystalline Bi2S3 nanowires in the field-effect geometry. The nanowires exhibit n-type conduction and device characteristics such as activation energy, ON/OFF ratio, and mobility are calculated over a temperature range of 120-320 K and at several bias values. The noise magnitude is measured between 0.01 and 5 Hz at several gate voltages as the device turns from it's OFF to ON state. The presence of mid-gap states which act as charge traps within the band gap can potentially explain the observed transport characteristics. Sulfur vacancies are the likely origin of these mid-gap states which makes Bi2S3 nanowires appealing for defect engineering as a means to enhance its optoelectronic properties and also to better understand the important role of defects in nanoscale semiconductors.

Spin Josephson effect in topological superconductor-ferromagnet junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ren, C. D.; Wang, J., E-mail: jwang@seu.edu.cn

2014-03-21

The composite topological superconductor (TS), made of one-dimensional spin-orbit coupled nanowire with proximity-induced s-wave superconductivity, is not a pure p-wave superconductor but still has a suppressed s-wave pairing. We propose to probe the spin texture of the p-wave pairing in this composite TS by examining possible spin supercurrents in an unbiased TS/ferromagnet junction. It is found that both the exchange-coupling induced and spin-flip reflection induced spin currents exist in the setup and survive even in the topological phase. We showed that besides the nontrivial p-wave pairing state accounting for Majorana Fermions, there shall be a trivial p-wave pairing state thatmore » contributes to spin supercurrent. The trivial p-wave pairing state is diagnosed from the mixing effect between the suppressed s-wave pairing and the topologically nontrivial p-wave pairing. The d vector of the TS is proved not to be rigorously perpendicular to the spin projection of p-wave pairings. Our findings are also confirmed by the Kitaev's p-wave model with a nonzero s-wave pairing.« less

Magnetization reversal modes in fourfold Co nano-wire systems

NASA Astrophysics Data System (ADS)

Blachowicz, T.; Ehrmann, A.

2015-09-01

Magnetic nano-wire systems are, as well as other patterned magnetic structures, of special interest for novel applications, such as magnetic storage media. In these systems, the coupling between neighbouring magnetic units is most important for the magnetization reversal process of the complete system, leading to a variety of magnetization reversal mechanisms. This article examines the influence of the magnetic material on hysteresis loop shape, coercive field, and magnetization reversal modes. While iron nano-wire systems exhibit flat or one-step hysteresis loops, systems consisting of cobalt nano-wires show hysteresis loops with several longitudinal steps and transverse peaks, correlated to a rich spectrum of magnetization reversal mechanisms. We show that changing the material parameters while the system geometry stays identical can lead to completely different hysteresis loops and reversal modes. Thus, especially for finding magnetic nano-systems which can be used as quaternary or even higher-order storage devices, it is rational to test several materials for the planned systems. Apparently, new materials may lead to novel and unexpected behaviour - and can thus result in novel functionalities.

Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems

PubMed Central

Smith, David C.; Spencer, Joseph H.; Sloan, Jeremy; McDonnell, Liam P.; Trewhitt, Harrison; Kashtiban, Reza J.; Faulques, Eric

2016-01-01

This paper briefly describes how nanowires with diameters corresponding to 1 to 5 atoms can be produced by melting a range of inorganic solids in the presence of carbon nanotubes. These nanowires are extreme in the sense that they are the limit of miniaturization of nanowires and their behavior is not always a simple extrapolation of the behavior of larger nanowires as their diameter decreases. The paper then describes the methods required to obtain Raman spectra from extreme nanowires and the fact that due to the van Hove singularities that 1D systems exhibit in their optical density of states, that determining the correct choice of photon excitation energy is critical. It describes the techniques required to determine the photon energy dependence of the resonances observed in Raman spectroscopy of 1D systems and in particular how to obtain measurements of Raman cross-sections with better than 8% noise and measure the variation in the resonance as a function of sample temperature. The paper describes the importance of ensuring that the Raman scattering is linearly proportional to the intensity of the laser excitation intensity. It also describes how to use the polarization dependence of the Raman scattering to separate Raman scattering of the encapsulated 1D systems from those of other extraneous components in any sample. PMID:27168195

Ferromagnetism induced by entangled charge and orbital orderings in ferroelectric titanate perovskites

PubMed Central

Bristowe, N. C.; Varignon, J.; Fontaine, D.; Bousquet, E.; Ghosez, Ph.

2015-01-01

In magnetic materials, the Pauli exclusion principle typically drives anti-alignment between electron spins on neighbouring species resulting in antiferromagnetic behaviour. Ferromagnetism exhibiting spontaneous spin alignment is a fairly rare behaviour, but once materialized is often associated with itinerant electrons in metals. Here we predict and rationalize robust ferromagnetism in an insulating oxide perovskite structure based on the popular titanate series. In half-doped layered titanates, the combination of Jahn–Teller and oxygen breathing motions opens a band gap and creates an unusual charge and orbital ordering of the Ti d electrons. It is argued that this intriguingly intricate electronic network favours the elusive inter-site ferromagnetic (FM) ordering, on the basis of intra-site Hund's rules. Finally, we find that the layered oxides are also ferroelectric with a spontaneous polarization approaching that of BaTiO3. The concepts are general and design principles of the technologically desirable FM ferroelectric multiferroics are presented. PMID:25807180

Structural changes concurrent with ferromagnetic transition

NASA Astrophysics Data System (ADS)

Yang, Sen; Bao, Hui-Xin; Zhou, Chao; Wang, Yu; Ren, Xiao-Bing; Song, Xiao-Ping; Yoshitaka, Matsushita; Yoshio, Katsuya; Masahiko, Tanaka; Keisuke, Kobayashi

2013-04-01

Ferromagnetic transition has generally been considered to involve only an ordering of magnetic moment with no change in the host crystal structure or symmetry, as evidenced by a wealth of crystal structure data from conventional X-ray diffractometry (XRD). However, the existence of magnetostriction in all known ferromagnetic systems indicates that the magnetic moment is coupled to the crystal lattice; hence there is a possibility that magnetic ordering may cause a change in crystal structure. With the development of high-resolution synchrotron XRD, more and more magnetic transitions have been found to be accompanied by simultaneous structural changes. In this article, we review our recent progress in understanding the structural change at a ferromagnetic transition, including synchrotron XRD evidence of structural changes at the ferromagnetic transition, a phenomenological theory of crystal structure changes accompanying ferromagnetic transitions, new insight into magnetic morphotropic phase boundaries (MPB) and so on. Two intriguing implications of non-centric symmetry in the ferromagnetic phase and the first-order nature of ferromagnetic transition are also discussed here. In short, this review is intended to give a self-consistent and logical account of structural change occurring simultaneously with a ferromagnetic transition, which may provide new insight for developing highly magneto-responsive materials.

A Nanowire-Based Plasmonic Quantum Dot Laser.

PubMed

Ho, Jinfa; Tatebayashi, Jun; Sergent, Sylvain; Fong, Chee Fai; Ota, Yasutomo; Iwamoto, Satoshi; Arakawa, Yasuhiko

2016-04-13

Quantum dots enable strong carrier confinement and exhibit a delta-function like density of states, offering significant improvements to laser performance and high-temperature stability when used as a gain medium. However, quantum dot lasers have been limited to photonic cavities that are diffraction-limited and further miniaturization to meet the demands of nanophotonic-electronic integration applications is challenging based on existing designs. Here we introduce the first quantum dot-based plasmonic laser to reduce the cross-sectional area of nanowire quantum dot lasers below the cutoff limit of photonic modes while maintaining the length in the order of the lasing wavelength. Metal organic chemical vapor deposition grown GaAs-AlGaAs core-shell nanowires containing InGaAs quantum dot stacks are placed directly on a silver film, and lasing was observed from single nanowires originating from the InGaAs quantum dot emission into the low-loss higher order plasmonic mode. Lasing threshold pump fluences as low as ∼120 μJ/cm(2) was observed at 7 K, and lasing was observed up to 125 K. Temperature stability from the quantum dot gain, leading to a high characteristic temperature was demonstrated. These results indicate that high-performance, miniaturized quantum dot lasers can be realized with plasmonics.

High performance NO2 sensor using MoS2 nanowires network

NASA Astrophysics Data System (ADS)

Kumar, Rahul; Goel, Neeraj; Kumar, Mahesh

2018-01-01

We report on a high-performance NO2 sensor based on a one dimensional MoS2 nanowire (NW) network. The MoS2 NW network was synthesized using chemical transport reaction through controlled turbulent vapor flow. The crystal structure and surface morphology of MoS2 NWs were confirmed by X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, and scanning electron microscopy. Further, the sensing behavior of the nanowires was investigated at different temperatures for various concentrations of NO2 and the sensor exhibited about 2-fold enhanced sensitivity with a low detection limit of 4.6 ppb for NO2 at 60 °C compared to sensitivity at room temperature. Moreover, it showed a fast response (16 s) with complete recovery (172 s) at 60 °C, while sensitivity of the device was decreased at 120 °C. The efficient sensing with reliable selectivity toward NO2 of the nanowires is attributed to a combination of abundant active edge sites along with a large surface area and tuning of the potential barrier at the intersections of nanowires during adsorption/desorption of gas molecules.

Direct observation of shear piezoelectricity in poly-l-lactic acid nanowires

NASA Astrophysics Data System (ADS)

Smith, Michael; Calahorra, Yonatan; Jing, Qingshen; Kar-Narayan, Sohini

2017-07-01

Piezoelectric polymers are capable of interconverting mechanical and electrical energy, and are therefore candidate materials for biomedical applications such as sensors, actuators, and energy harvesters. In particular, nanowires of these materials are attractive as they can be unclamped, flexible and sensitive to small vibrations. Poly-l-lactic acid (PLLA) nanowires have been investigated for their use in biological applications, but their piezoelectric properties have never been fully characterised, even though macroscopic films and fibres have been shown to exhibit shear piezoelectricity. This piezoelectric mode is particularly interesting for in vivo applications where shear forces are especially relevant, and is similar to what has been observed in natural materials such as bone and DNA. Here, using piezo-response force microscopy (PFM), we report the first direct observation of shear piezoelectricity in highly crystalline and oriented PLLA nanowires grown by a novel template-wetting method. Our results are validated using finite-element simulations and numerical analysis, which importantly and more generally allow for accurate interpretation of PFM signals in soft nanostructured materials. Our work opens up the possibility for the development of biocompatible and sustainable piezoelectric nanogenerators and sensors based on polymer nanowires.

Room Temperature Sensing Achieved by GaAs Nanowires and oCVD Polymer Coating.

PubMed

Wang, Xiaoxue; Ermez, Sema; Goktas, Hilal; Gradečak, Silvija; Gleason, Karen

2017-06-01

Novel structures comprised of GaAs nanowire arrays conformally coated with conducting polymers (poly(3,4-ethylenedioxythiophene) (PEDOT) or poly(3,4-ethylenedioxythiophene-co-3-thiophene acetic acid) display both sensitivity and selectivity to a variety of volatile organic chemicals. A key feature is room temperature operation, so that neither a heater nor the power it would consume, is required. It is a distinct difference from traditional metal oxide sensors, which typically require elevated operational temperature. The GaAs nanowires are prepared directly via self-seeded metal-organic chemical deposition, and conducting polymers are deposited on GaAs nanowires using oxidative chemical vapor deposition (oCVD). The range of thickness for the oCVD layer is between 100 and 200 nm, which is controlled by changing the deposition time. X-ray diffraction analysis indicates an edge-on alignment of the crystalline structure of the PEDOT coating layer on GaAs nanowires. In addition, the positive correlation between the improvement of sensitivity and the increasing nanowire density is demonstrated. Furthermore, the effect of different oCVD coating materials is studied. The sensing mechanism is also discussed with studies considering both nanowire density and polymer types. Overall, the novel structure exhibits good sensitivity and selectivity in gas sensing, and provides a promising platform for future sensor design. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis and characterization of silver nanowires with zigzag morphology in N, N-dimethylformamide

NASA Astrophysics Data System (ADS)

He, Xin; Zhao, Xiujian; Chen, Yunxia; Feng, Jinyang; Sun, Zhenya

2007-08-01

Zigzag silver nanowires with a uniform diameter of 20±5 nm were prepared by reducing silver nitrate (AgNO 3) with N, N-dimethylformamide (DMF) in the presence of tetrabutyl titanate (TBT) and acetylacetone (AcAc) at 373 K for 18 h. X-ray and selected area electron diffraction (XRD and SAED) patterns reveal that the prepared product is made of pure silver with face centered cubic structure. Transmission electron microscopy (TEM) investigations suggest that the amount of silver nanowires is enhanced with increase in reaction time, and the end-to-end assemblies of silver nanorods are observed during the reaction process. After 18 h reaction, silver nanowires with zigzag morphology are obtained. In this paper, a possible growth process of silver nanowires with this interesting shape is described. Silver nanoparticles with small sizes were obtained by reducing Ag + ions with DMF, providing seeds for homogeneous growth of silver nanorods. With the extending reaction time, the synthesized silver nanorods were connected in an end-to-end manner, and the interface between the connections of two nanorods gradually disappeared. The final product shows zigzag morphology with various angles. The angles between two connecting straight parts of zigzag nanowires exhibit an alterable range of 74-151°. These silver nanowires show tremendous potential applications in future nanoscale electronic circuits.

Misfit-guided self-organization of anticorrelated Ge quantum dot arrays on Si nanowires.

PubMed

Kwon, Soonshin; Chen, Zack C Y; Kim, Ji-Hun; Xiang, Jie

2012-09-12

Misfit-strain guided growth of periodic quantum dot (QD) arrays in planar thin film epitaxy has been a popular nanostructure fabrication method. Engineering misfit-guided QD growth on a nanoscale substrate such as the small curvature surface of a nanowire represents a new approach to self-organized nanostructure preparation. Perhaps more profoundly, the periodic stress underlying each QD and the resulting modulation of electro-optical properties inside the nanowire backbone promise to provide a new platform for novel mechano-electronic, thermoelectronic, and optoelectronic devices. Herein, we report a first experimental demonstration of self-organized and self-limited growth of coherent, periodic Ge QDs on a one-dimensional Si nanowire substrate. Systematic characterizations reveal several distinctively different modes of Ge QD ordering on the Si nanowire substrate depending on the core diameter. In particular, Ge QD arrays on Si nanowires of around 20 nm diameter predominantly exhibit an anticorrelated pattern whose wavelength agrees with theoretical predictions. The correlated pattern can be attributed to propagation and correlation of misfit strain across the diameter of the thin nanowire substrate. The QD array growth is self-limited as the wavelength of the QDs remains unchanged even after prolonged Ge deposition. Furthermore, we demonstrate a direct kinetic transformation from a uniform Ge shell layer to discrete QD arrays by a postgrowth annealing process.

Field-emission property of self-purification SiC/SiOx coaxial nanowires synthesized via direct microwave irradiation using iron-containing catalyst

NASA Astrophysics Data System (ADS)

Zhou, Qing; Yu, Yongzhi; Huang, Shan; Meng, Jiang; Wang, Jigang

2017-07-01

SiC/SiOx coaxial nanowires were rapidly synthesized via direct microwave irradiation in low vacuum atmosphere. During the preparation process, only graphite, silicon, silicon dioxide powders were used as raw materials and iron-containing substance was employed as catalyst. Comprehensive characterizations were employed to investigate the microstructure of the products. The results showed that a great quantity of coaxial nanowires with uniform sizes and high aspect ratio had been successfully achieved. The coaxial nanowires consist of a silicon oxide (SiOx) shell and a β-phase silicon carbide (β-SiC) core that exhibited in special tube brush like. In additional, nearly all the products were achieved in the statement of pure SiC/SiOx coaxial nanowires without the existence of metallic catalyst, indicating that the self-removal of iron (Fe) catalyst should be occurred during the synthesis process. Photoluminescence (PL) spectral analysis result indicated that such novel SiC/SiOx coaxial nanowires exhibited significant blue-shift. Besides, the measurement results of field-emission (FE) demonstrated that the SiC/SiOx coaxial nanowires had ultralow turn-on field and threshold field with values of 0.2 and 2.1 V/μm, respectively. The hetero-junction structure formed between SiOx shell and SiC core, lots of emission sites, as well as clear tips of the nanowires were applied to explain the excellent FE properties.[Figure not available: see fulltext.

Plasmonic engineering of metal-oxide nanowire heterojunctions in integrated nanowire rectification units

NASA Astrophysics Data System (ADS)

Lin, Luchan; Zou, Guisheng; Liu, Lei; Duley, Walt W.; Zhou, Y. Norman

2016-05-01

We show that irradiation with femtosecond laser pulses can produce robust nanowire heterojunctions in coupled non-wetting metal-oxide Ag-TiO2 structures. Simulations indicate that joining arises from the effect of strong plasmonic localization in the region of the junction. Strong electric field effects occur in both Ag and TiO2 resulting in the modification of both surfaces and an increase in wettability of TiO2, facilitating the interconnection of Ag and TiO2 nanowires. Irradiation leads to the creation of a thin layer of highly defected TiO2 in the contact region between the Ag and TiO2 nanowires. The presence of this layer allows the formation of a heterojunction and offers the possibility of engineering the electronic characteristics of interfacial structures. Rectifying junctions with single and bipolar properties have been generated in Ag-TiO2 nanowire circuits incorporating asymmetrical and symmetrical interfacial structures, respectively. This fabrication technique should be applicable for the interconnection of other heterogeneous metal-oxide nanowire components and demonstrates that femtosecond laser irradiation enables interfacial engineering for electronic applications of integrated nanowire structures.

Tunnel magnetoresistance and linear conductance of double quantum dots strongly coupled to ferromagnetic leads

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weymann, Ireneusz, E-mail: weymann@amu.edu.pl

2015-05-07

We analyze the spin-dependent linear-response transport properties of double quantum dots strongly coupled to external ferromagnetic leads. By using the numerical renormalization group method, we determine the dependence of the linear conductance and tunnel magnetoresistance on the degree of spin polarization of the leads and the position of the double dot levels. We focus on the transport regime where the system exhibits the SU(4) Kondo effect. It is shown that the presence of ferromagnets generally leads the suppression of the linear conductance due to the presence of an exchange field. Moreover, the exchange field gives rise to a transition frommore » the SU(4) to the orbital SU(2) Kondo effect. We also analyze the dependence of the tunnel magnetoresistance on the double dot levels' positions and show that it exhibits a very nontrivial behavior.« less

Ferromagnetic Interactions in the Surface State of LaCoO3

NASA Astrophysics Data System (ADS)

Yan, J.-Q.; Zhou, J.-S.; Goodenough, J. B.

2004-03-01

The spin-state degree of freedom is a peculiar property of LaCoO3 and has been the subject of continuing interest since the 1950s.The thermal excitation from low-spin state to higher-spin state induces a sharp increase of magnetic susceptibility,c(T), above 35 K. A Curie-like paramagnetism below 35 K has been attributed to impurities, oxygen nonstoichiometry, or localized spins of the surface layer. The minimum at 35 K of c(T) varies in magnitude in different reports and single crystals exhibit a smaller c(T) than polycrystals. A ferromagnetic component in LaCoO3 has been found and attributed to CoIV or isolated regions of magnetic phase in a nonmagnetic matrix. We report magnetic measurements of both single crystal and cold-pressed single-crystal powders. Cold-pressing significantly reduces the grain size and the increased surface area gives a strong ferromagnetism with Tc 85 K. The magnitude of c(T) at 35 K depends on the contribution of both the low-T paramagnetism and the ferromagnetic component.

Boron doped graphene wrapped silver nanowires as an efficient electrocatalyst for molecular oxygen reduction

NASA Astrophysics Data System (ADS)

Nair, Anju K.; Thazhe Veettil, Vineesh; Kalarikkal, Nandakumar; Thomas, Sabu; Kala, M. S.; Sahajwalla, Veena; Joshi, Rakesh K.; Alwarappan, Subbiah

2016-12-01

Metal nanowires exhibit unusually high catalytic activity towards oxygen reduction reaction (ORR) due to their inherent electronic structures. However, controllable synthesis of stable nanowires still remains as a daunting challenge. Herein, we report the in situ synthesis of silver nanowires (AgNWs) over boron doped graphene sheets (BG) and demonstrated its efficient electrocatalytic activity towards ORR for the first time. The electrocatalytic ORR efficacy of BG-AgNW is studied using various voltammetric techniques. The BG wrapped AgNWs shows excellent ORR activity, with very high onset potential and current density and it followed four electron transfer mechanism with high methanol tolerance and stability towards ORR. The results are comparable to the commercially available 20% Pt/C in terms of performance.

Boron doped graphene wrapped silver nanowires as an efficient electrocatalyst for molecular oxygen reduction

PubMed Central

Nair, Anju K.; Thazhe veettil, Vineesh; Kalarikkal, Nandakumar; Thomas, Sabu; Kala, M. S.; Sahajwalla, Veena; Joshi, Rakesh K.; Alwarappan, Subbiah

2016-01-01

Metal nanowires exhibit unusually high catalytic activity towards oxygen reduction reaction (ORR) due to their inherent electronic structures. However, controllable synthesis of stable nanowires still remains as a daunting challenge. Herein, we report the in situ synthesis of silver nanowires (AgNWs) over boron doped graphene sheets (BG) and demonstrated its efficient electrocatalytic activity towards ORR for the first time. The electrocatalytic ORR efficacy of BG-AgNW is studied using various voltammetric techniques. The BG wrapped AgNWs shows excellent ORR activity, with very high onset potential and current density and it followed four electron transfer mechanism with high methanol tolerance and stability towards ORR. The results are comparable to the commercially available 20% Pt/C in terms of performance. PMID:27941954

Long-range spin-singlet proximity effect for a Josephson system with a single-crystal ferromagnet due to its band-structure features

NASA Astrophysics Data System (ADS)

Avdeev, M. V.; Proshin, Yu. N.

2018-03-01

A possible explanation for the long-range proximity effect observed in single-crystalline cobalt nanowires sandwiched between two tungsten superconducting electrodes [Nat. Phys. 6, 389 (2010), 10.1038/nphys1621] is proposed. The theoretical model uses properties of a ferromagnet band structure. Specifically, to connect the exchange field with the momentum of quasiparticles the distinction between the effective masses in majority and minority spin subbands and the Fermi-surface anisotropy are considered. The derived Eilenberger-like equations allowed us to obtain a renormalized exchange interaction that is completely compensated for some crystallographic directions under certain conditions. The proposed theoretical model is compared with previous approaches.

Synthesis of p-type GaN nanowires.

PubMed

Kim, Sung Wook; Park, Youn Ho; Kim, Ilsoo; Park, Tae-Eon; Kwon, Byoung Wook; Choi, Won Kook; Choi, Heon-Jin

2013-09-21

GaN has been utilized in optoelectronics for two decades. However, p-type doping still remains crucial for realization of high performance GaN optoelectronics. Though Mg has been used as a p-dopant, its efficiency is low due to the formation of Mg-H complexes and/or structural defects in the course of doping. As a potential alternative p-type dopant, Cu has been recognized as an acceptor impurity for GaN. Herein, we report the fabrication of Cu-doped GaN nanowires (Cu:GaN NWs) and their p-type characteristics. The NWs were grown vertically via a vapor-liquid-solid (VLS) mechanism using a Au/Ni catalyst. Electrical characterization using a nanowire-field effect transistor (NW-FET) showed that the NWs exhibited n-type characteristics. However, with further annealing, the NWs showed p-type characteristics. A homo-junction structure (consisting of annealed Cu:GaN NW/n-type GaN thin film) exhibited p-n junction characteristics. A hybrid organic light emitting diode (OLED) employing the annealed Cu:GaN NWs as a hole injection layer (HIL) also demonstrated current injected luminescence. These results suggest that Cu can be used as a p-type dopant for GaN NWs.

Nanowire surface fastener fabrication on flexible substrate.

PubMed

Toku, Yuhki; Uchida, Keita; Morita, Yasuyuki; Ju, Yang

2018-07-27

The market for wearable devices has increased considerably in recent years. In response to this demand, flexible electronic circuit technology has become more important. The conventional bonding technology in electronic assembly depends on high-temperature processes such as reflow soldering, which result in undesired thermal damages and residual stress at a bonding interface. In addition, it exhibits poor compatibility with bendable or stretchable device applications. Therefore, there is an urgent requirement to attach electronic parts on printed circuit boards with good mechanical and electrical properties at room temperature. Nanowire surface fasteners (NSFs) are candidates for resolving these problems. This paper describes the fabrication of an NSF on a flexible substrate, which can be used for room temperature conductive bonding. The template method is used for preparing high-density nanowire arrays. A Cu thin film is layered on the template as the flexible substrate. After etching the template, a Cu NSF is obtained on the Cu film substrate. In addition, the electrical and mechanical properties of the Cu NSF are studied under various fabrication conditions. The Cu NSF exhibits high shear adhesion strength (∼234 N cm -2 ) and low contact resistivity (2.2 × 10 -4 Ω cm 2 ).

Nanowire surface fastener fabrication on flexible substrate

NASA Astrophysics Data System (ADS)

Toku, Yuhki; Uchida, Keita; Morita, Yasuyuki; Ju, Yang

2018-07-01

The market for wearable devices has increased considerably in recent years. In response to this demand, flexible electronic circuit technology has become more important. The conventional bonding technology in electronic assembly depends on high-temperature processes such as reflow soldering, which result in undesired thermal damages and residual stress at a bonding interface. In addition, it exhibits poor compatibility with bendable or stretchable device applications. Therefore, there is an urgent requirement to attach electronic parts on printed circuit boards with good mechanical and electrical properties at room temperature. Nanowire surface fasteners (NSFs) are candidates for resolving these problems. This paper describes the fabrication of an NSF on a flexible substrate, which can be used for room temperature conductive bonding. The template method is used for preparing high-density nanowire arrays. A Cu thin film is layered on the template as the flexible substrate. After etching the template, a Cu NSF is obtained on the Cu film substrate. In addition, the electrical and mechanical properties of the Cu NSF are studied under various fabrication conditions. The Cu NSF exhibits high shear adhesion strength (∼234 N cm‑2) and low contact resistivity (2.2 × 10‑4 Ω cm2).

High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

NASA Astrophysics Data System (ADS)

Cui, Yunkang; Chen, Jing; Di, Yunsong; Zhang, Xiaobing; Lei, Wei

2017-12-01

In this paper, a facile method to fabricate the flexible field emission devices (FEDs) based on SiC nanostructure emitters by a thermal evaporation method has been demonstrated. The composition characteristics of SiC nanowires was characterized by X-ray diffraction (XRD), selected area electron diffraction (SAED) and energy dispersive X-ray spectrometer (EDX), while the morphology was revealed by field emission scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The results showed that the SiC nanowires grew along the [111] direction with the diameter of ˜110 nm and length of˜30 μm. The flexible FEDs have been fabricated by transferring and screen-printing the SiC nanowires onto the flexible substrates exhibited excellent field emission properties, such as the low turn-on field (˜0.95 V/μm) and threshold field (˜3.26 V/μm), and the high field enhancement factor (β=4670). It is worth noting the current density degradation can be controlled lower than 2% per hour during the stability tests. In addition, the flexible FEDs based on SiC nanowire emitters exhibit uniform bright emission modes under bending test conditions. As a result, this strategy is very useful for its potential application in the commercial flexible FEDs.

Doping with Graphitic Nitrogen Triggers Ferromagnetism in Graphene

PubMed Central

2017-01-01

Nitrogen doping opens possibilities for tailoring the electronic properties and band gap of graphene toward its applications, e.g., in spintronics and optoelectronics. One major obstacle is development of magnetically active N-doped graphene with spin-polarized conductive behavior. However, the effect of nitrogen on the magnetic properties of graphene has so far only been addressed theoretically, and triggering of magnetism through N-doping has not yet been proved experimentally, except for systems containing a high amount of oxygen and thus decreased conductivity. Here, we report the first example of ferromagnetic graphene achieved by controlled doping with graphitic, pyridinic, and chemisorbed nitrogen. The magnetic properties were found to depend strongly on both the nitrogen concentration and type of structural N-motifs generated in the host lattice. Graphenes doped below 5 at. % of nitrogen were nonmagnetic; however, once doped at 5.1 at. % of nitrogen, N-doped graphene exhibited transition to a ferromagnetic state at ∼69 K and displayed a saturation magnetization reaching 1.09 emu/g. Theoretical calculations were used to elucidate the effects of individual chemical forms of nitrogen on magnetic properties. Results showed that magnetic effects were triggered by graphitic nitrogen, whereas pyridinic and chemisorbed nitrogen contributed much less to the overall ferromagnetic ground state. Calculations further proved the existence of exchange coupling among the paramagnetic centers mediated by the conduction electrons. PMID:28110530

High thermoelectric properties of (Sb, Bi)2Te3 nanowire arrays by tilt-structure engineering

NASA Astrophysics Data System (ADS)

Tan, Ming; Hao, Yanming; Deng, Yuan; Chen, Jingyi

2018-06-01

In this paper, we present an innovative tilt-structure design concept for (Sb, Bi)2Te3 nanowire array assembled by high-quality nanowires with well oriented growth, utilizing a simple vacuum thermal evaporation technique. The unusual tilt-structure (Sb, Bi)2Te3 nanowire array with a tilted angle of 45° exhibits a high thermoelectric dimensionless figure-of-merit ZT = 1.72 at room temperature. The relatively high ZT value in contrast to that of previously reported (Sb, Bi)2Te3 materials and the vertical (Sb, Bi)2Te3 nanowire arrays evidently reveals the crucial role of the unique tilt-structure in favorably influencing carrier and phonon transport properties, resulting in a significantly improved ZT value. The transport mechanism of such tilt-structure is proposed and investigated. This method opens a new approach to optimize nano-structure in thin films for next-generation thermoelectric materials and devices.

Novel Electrical and Optoelectronic Characterization Methods for Semiconducting Nanowires and Nanotubes

NASA Astrophysics Data System (ADS)

Katzenmeyer, Aaron Michael

As technology journalist David Pogue recounted, "If everything we own had improved over the last 25 years as much as electronics have, the average family car would travel four times faster than the space shuttle; houses would cost 200 bucks." The electronics industry is one which, through Moore's Law, created a self-fulfilling prophecy of exponential advancement. This progress has made unforeseen technologies commonplace and revealed new physical understanding of the world in which we live. It is in keeping with these trends that the current work is motivated. This dissertation focuses on the advancement of electrical and optoelectronic characterization techniques suitable for understanding the underlying physics and applications of nanoscopic devices, in particular semiconducting nanowires and nanotubes. In this work an in situ measurement platform based on a field-emission scanning electron microscope fitted with an electrical nanoprobe is shown to be a robust instrument for determining fundamental aspects of nanowire systems (i.e. the dominant mode of carrier transport and the nature of the electrical contacts to the nanowire). The platform is used to fully classify two distinct systems. In one instance it is found that indium arsenide nanowires display space-charge-limited transport and are contacted Ohmically. In the other, gallium arsenide nanowires are found to sequentially show the trap-mediated transport regimes of Poole-Frenkel effect and phonon-assisted tunneling. The contacts in this system are resolved to be asymmetric -- one is Ohmic while the other is a Schottky barrier. Additionally scanning photocurrent microscopy is used to spatially resolve optoelectronic nanowire and nanotube devices. In core/shell gallium arsenide nanowire solar cell arrays it is shown that each individual nanowire functions as a standalone solar cell. Nanotube photodiodes are mapped by scanning photocurrent microscopy to confirm an optimal current collection scheme has been

Growing Oxide Nanowires and Nanowire Networks by Solid State Contact Diffusion into Solution-Processed Thin Films.

PubMed

Glynn, Colm; McNulty, David; Geaney, Hugh; O'Dwyer, Colm

2016-11-01

New techniques to directly grow metal oxide nanowire networks without the need for initial nanoparticle seed deposition or postsynthesis nanowire casting will bridge the gap between bottom-up formation and top-down processing for many electronic, photonic, energy storage, and conversion technologies. Whether etched top-down, or grown from catalyst nanoparticles bottom-up, nanowire growth relies on heterogeneous material seeds. Converting surface oxide films, ubiquitous in the microelectronics industry, to nanowires and nanowire networks by the incorporation of extra species through interdiffusion can provide an alternative deposition method. It is shown that solution-processed thin films of oxides can be converted and recrystallized into nanowires and networks of nanowires by solid-state interdiffusion of ionic species from a mechanically contacted donor substrate. NaVO 3 nanowire networks on smooth Si/SiO 2 and granular fluorine-doped tin oxide surfaces can be formed by low-temperature annealing of a Na diffusion species-containing donor glass to a solution-processed V 2 O 5 thin film, where recrystallization drives nanowire growth according to the crystal habit of the new oxide phase. This technique illustrates a new method for the direct formation of complex metal oxide nanowires on technologically relevant substrates, from smooth semiconductors, to transparent conducting materials and interdigitated device structures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AC magnetic-field response of the ferromagnetic superconductor UGe2 with different magnetized states

NASA Astrophysics Data System (ADS)

Tanaka, Hiroyuki; Yamaguchi, Akira; Kawasaki, Ikuto; Sumiyama, Akihiko; Motoyama, Gaku; Yamamura, Tomoo

2018-01-01

We have performed parallel measurements of dc-magnetization and ac-magnetic susceptibility for a ferromagnetic superconductor, UGe2, in the ferromagnetic-superconducting phase. dc-magnetization measurements revealed that adequate demagnetizing of the sample allows for the preparation of various magnetized states with different zero-field residual magnetization. We observed that these states exhibit varying ac superconducting response at large ac-field amplitudes. The amount of ac flux penetration is less in the demagnetized state involving many domain walls. This result seems to contradict the theory that considers the domain walls as weak links. Moreover, the ferromagnetic domain walls enforce the shielding capability of superconductivity. This observation sheds light on the role of the domain walls on superconductivity, which has been a controversial issue for several decades. Two possible scenarios are presented to explain the enhancement of the shielding capability by the domain walls.

A silicon nanowire heater and thermometer

NASA Astrophysics Data System (ADS)

Zhao, Xingyan; Dan, Yaping

2017-07-01

In the thermal conductivity measurements of thermoelectric materials, heaters and thermometers made of the same semiconducting materials under test, forming a homogeneous system, will significantly simplify fabrication and integration. In this work, we demonstrate a high-performance heater and thermometer made of single silicon nanowires (SiNWs). The SiNWs are patterned out of a silicon-on-insulator wafer by CMOS-compatible fabrication processes. The electronic properties of the nanowires are characterized by four-probe and low temperature Hall effect measurements. The I-V curves of the nanowires are linear at small voltage bias. The temperature dependence of the nanowire resistance allows the nanowire to be used as a highly sensitive thermometer. At high voltage bias, the I-V curves of the nanowire become nonlinear due to the effect of Joule heating. The temperature of the nanowire heater can be accurately monitored by the nanowire itself as a thermometer.

Preparation of highly conductive, transparent, and flexible graphene/silver nanowires substrates using non-thermal laser photoreduction

NASA Astrophysics Data System (ADS)

Anis, Badawi; Mostafa, A. M.; El Sayed, Z. A.; Khalil, A. S. G.; Abouelsayed, A.

2018-07-01

We present the preparation of highly conducting, transparent, and flexible reduced graphene oxide/silver nanowires (rGO/SNWs) substrates using non-thermal laser photoreduction method. High quality monolayers graphene oxide (GO) solution has been prepared by the chemical oxidation of thermally expanded large area natural graphite. Silver nanowires was prepared by using the typical polyol method. Uniform hybrid GO/silver nanowires (GO/SNWs) was prepared by growing the nanowires from silver nuclei in the presence of GO. Uniform and high-quality rGO/SNWs thin films were prepared using a dip-coating technique and were reduced to highly electrically conductive graphene and transparent conductive films using non-thermal laser scribe method. The laser scribed rGO/SNWs hybrid film exhibited 80% transparency with 70 Ω □-1 after 20 min of dipping in GO/SNWs solution.

The Jahn-Teller distortion influenced ferromagnetic order in Pr1-xLaxMnO3

NASA Astrophysics Data System (ADS)

He, Feifei; Mao, Zhongquan; Tang, Lingyun; Zhang, Jiang; Chen, Xi

2018-06-01

The structural and magnetic properties of Pr1-xLaxMnO3 (0 ≤ x ≤ 1) polycrystalline powders are investigated. A structural phase transition from a large Jahn-Teller (J-T) distorted orthorhombic structure to a small J-T distorted orthorhombic phase is found at x = 0.70, while the LaMnO3 is showed to have a rhombohedral structure. All the samples exhibit ferromagnetic ordering, and meanwhile, a reentrant spin glass behavior at low temperature. The relationship between J-T distortions and the ferromagnetic order is discussed.

Tunneling Evidence of Half-Metallic Ferromagnetism in La(0.7)Ca(0.3)MnO(3)

NASA Technical Reports Server (NTRS)

Wei, J. Y. T.; Yeh, N. C.; Vasquez, R. P.

1997-01-01

Direct experimental evidence of half-metallic density of states (DOS) is observed by scanning tunneling spectroscopy on ferromagnetic La(0.7)Ca(0.3)MnO(3) which exhibits colossal magnetoresistance (SMR).

Study of GaN nanowires converted from β-Ga2O3 and photoconduction in a single nanowire

NASA Astrophysics Data System (ADS)

Kumar, Mukesh; Kumar, Sudheer; Chauhan, Neha; Sakthi Kumar, D.; Kumar, Vikram; Singh, R.

2017-08-01

The formation of GaN nanowires from β-Ga2O3 nanowires and photoconduction in a fabricated single GaN nanowire device has been studied. Wurtzite phase GaN were formed from monoclinic β-Ga2O3 nanowires with or without catalyst particles at their tips. The formation of faceted nanostructures from catalyst droplets presented on a nanowire tip has been discussed. The nucleation of GaN phases in β-Ga2O3 nanowires and their subsequent growth due to interfacial strain energy has been examined using a high resolution transmission electron microscope. The high quality of the converted GaN nanowire is confirmed by fabricating single nanowire photoconducting devices which showed ultra high responsivity under ultra-violet illumination.

Nanowire mesh solar fuels generator

DOEpatents

Yang, Peidong; Chan, Candace; Sun, Jianwei; Liu, Bin

2016-05-24

This disclosure provides systems, methods, and apparatus related to a nanowire mesh solar fuels generator. In one aspect, a nanowire mesh solar fuels generator includes (1) a photoanode configured to perform water oxidation and (2) a photocathode configured to perform water reduction. The photocathode is in electrical contact with the photoanode. The photoanode may include a high surface area network of photoanode nanowires. The photocathode may include a high surface area network of photocathode nanowires. In some embodiments, the nanowire mesh solar fuels generator may include an ion conductive polymer infiltrating the photoanode and the photocathode in the region where the photocathode is in electrical contact with the photoanode.

From immobilized cells to motile cells on a bed-of-nails: effects of vertical nanowire array density on cell behaviour

PubMed Central

Persson, Henrik; Li, Zhen; Tegenfeldt, Jonas O.; Oredsson, Stina; Prinz, Christelle N.

2015-01-01

The field of vertical nanowire array-based applications in cell biology is growing rapidly and an increasing number of applications are being explored. These applications almost invariably rely on the physical properties of the nanowire arrays, creating a need for a better understanding of how their physical properties affect cell behaviour. Here, we investigate the effects of nanowire density on cell migration, division and morphology for murine fibroblasts. Our results show that few nanowires are sufficient to immobilize cells, while a high nanowire spatial density enables a ”bed-of-nails” regime, where cells reside on top of the nanowires and are fully motile. The presence of nanowires decreases the cell proliferation rate, even in the “bed-of-nails” regime. We show that the cell morphology strongly depends on the nanowire density. Cells cultured on low (0.1 μm−2) and medium (1 μm−2) density substrates exhibit an increased number of multi-nucleated cells and micronuclei. These were not observed in cells cultured on high nanowire density substrates (4 μm−2). The results offer important guidelines to minimize cell-function perturbations on nanowire arrays. Moreover, these findings offer the possibility to tune cell proliferation and migration independently by adjusting the nanowire density, which may have applications in drug testing. PMID:26691936

Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2

NASA Astrophysics Data System (ADS)

Yamasaki, Yuji; Moriya, Rai; Arai, Miho; Masubuchi, Satoru; Pyon, Sunseng; Tamegai, Tsuyoshi; Ueno, Keiji; Machida, Tomoki

2017-12-01

Ferromagnetic van der Waals (vdW) materials are in demand for spintronic devices with all-two-dimensional-materials heterostructures. Here, we demonstrate mechanical exfoliation of magnetic-atom-intercalated transition metal dichalcogenide Cr1/3TaS2 from its bulk crystal; previously such intercalated materials were thought difficult to exfoliate. Magnetotransport in exfoliated tens-of-nanometres-thick flakes revealed ferromagnetic ordering below its Curie temperature T C ~ 110 K as well as strong in-plane magnetic anisotropy; these are identical to its bulk properties. Further, van der Waals heterostructure assembly of Cr1/3TaS2 with another intercalated ferromagnet Fe1/4TaS2 is demonstrated using a dry-transfer method. The fabricated heterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxide tunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealing possible spin injection and detection with these exfoliatable ferromagnetic materials through the vdW junction.

High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays.

PubMed

Chen, Po-Chiang; Shen, Guozhen; Chen, Haitian; Ha, Young-geun; Wu, Chao; Sukcharoenchoke, Saowalak; Fu, Yue; Liu, Jun; Facchetti, Antonio; Marks, Tobin J; Thompson, Mark E; Zhou, Chongwu

2009-11-24

We report high-performance arsenic (As)-doped indium oxide (In(2)O(3)) nanowires for transparent electronics, including their implementation in transparent thin-film transistors (TTFTs) and transparent active-matrix organic light-emitting diode (AMOLED) displays. The As-doped In(2)O(3) nanowires were synthesized using a laser ablation process and then fabricated into TTFTs with indium-tin oxide (ITO) as the source, drain, and gate electrodes. The nanowire TTFTs on glass substrates exhibit very high device mobilities (approximately 1490 cm(2) V(-1) s(-1)), current on/off ratios (5.7 x 10(6)), steep subthreshold slopes (88 mV/dec), and a saturation current of 60 microA for a single nanowire. By using a self-assembled nanodielectric (SAND) as the gate dielectric, the device mobilities and saturation current can be further improved up to 2560 cm(2) V(-1) s(-1) and 160 microA, respectively. All devices exhibit good optical transparency (approximately 81% on average) in the visible spectral range. In addition, the nanowire TTFTs were utilized to control green OLEDs with varied intensities. Furthermore, a fully integrated seven-segment AMOLED display was fabricated with a good transparency of 40% and with each pixel controlled by two nanowire transistors. This work demonstrates that the performance enhancement possible by combining nanowire doping and self-assembled nanodielectrics enables silicon-free electronic circuitry for low power consumption, optically transparent, high-frequency devices assembled near room temperature.

Lipid nanotube or nanowire sensor

DOEpatents

Noy, Aleksandr [Belmont, CA; Bakajin, Olgica [San Leandro, CA; Letant, Sonia [Livermore, CA; Stadermann, Michael [Dublin, CA; Artyukhin, Alexander B [Menlo Park, CA

2009-06-09

A sensor apparatus comprising a nanotube or nanowire, a lipid bilayer around the nanotube or nanowire, and a sensing element connected to the lipid bilayer. Also a biosensor apparatus comprising a gate electrode; a source electrode; a drain electrode; a nanotube or nanowire operatively connected to the gate electrode, the source electrode, and the drain electrode; a lipid bilayer around the nanotube or nanowire, and a sensing element connected to the lipid bilayer.

Lipid nanotube or nanowire sensor

DOEpatents

Noy, Aleksandr [Belmont, CA; Bakajin, Olgica [San Leandro, CA; Letant, Sonia [Livermore, CA; Stadermann, Michael [Dublin, CA; Artyukhin, Alexander B [Menlo Park, CA

2010-06-29

A sensor apparatus comprising a nanotube or nanowire, a lipid bilayer around the nanotube or nanowire, and a sensing element connected to the lipid bilayer. Also a biosensor apparatus comprising a gate electrode; a source electrode; a drain electrode; a nanotube or nanowire operatively connected to the gate electrode, the source electrode, and the drain electrode; a lipid bilayer around the nanotube or nanowire, and a sensing element connected to the lipid bilayer.

Hierarchically structured Co₃O₄@Pt@MnO₂ nanowire arrays for high-performance supercapacitors.

PubMed

Xia, Hui; Zhu, Dongdong; Luo, Zhentao; Yu, Yue; Shi, Xiaoqin; Yuan, Guoliang; Xie, Jianping

2013-10-17

Here we proposed a novel architectural design of a ternary MnO2-based electrode - a hierarchical Co3O4@Pt@MnO2 core-shell-shell structure, where the complemental features of the three key components (a well-defined Co3O4 nanowire array on the conductive Ti substrate, an ultrathin layer of small Pt nanoparticles, and a thin layer of MnO2 nanoflakes) are strategically combined into a single entity to synergize and construct a high-performance electrode for supercapacitors. Owing to the high conductivity of the well-defined Co3O4 nanowire arrays, in which the conductivity was further enhanced by a thin metal (Pt) coating layer, in combination with the large surface area provided by the small MnO2 nanoflakes, the as-fabricated Co3O4@Pt@MnO2 nanowire arrays have exhibited high specific capacitances, good rate capability, and excellent cycling stability. The architectural design demonstrated in this study provides a new approach to fabricate high-performance MnO2-based nanowire arrays for constructing next-generation supercapacitors.

Manganese oxide nanowires wrapped with nitrogen doped carbon layers for high performance supercapacitors.

PubMed

Li, Ying; Mei, Yuan; Zhang, Lin-Qun; Wang, Jian-Hai; Liu, An-Ran; Zhang, Yuan-Jian; Liu, Song-Qin

2015-10-01

In this study, manganese oxide nanowires wrapped by nitrogen-doped carbon layers (MnO(x)@NCs) were prepared by carbonization of poly(o-phenylenediamine) layer coated onto MnO2 nanowires for high performance supercapacitors. The component and structure of the MnO(x)@NCs were controlled through carbonization procedure under different temperatures. Results demonstrated that this composite combined the high conductivity and high specific surface area of nitrogen-doped carbon layers with the high pseudo-capacitance of manganese oxide nanowires. The as-prepared MnO(x)@NCs exhibited superior capacitive properties in 1 M Na2SO4 aqueous solution, such as high conductivity (4.167×10(-3) S cm(-1)), high specific capacitance (269 F g(-1) at 10 mV s(-1)) and long cycle life (134 F g(-1) after 1200 cycles at a scan rate of 50 mV s(-1)). It is reckoned that the present novel hybrid nanowires can serve as a promising electrode material for supercapacitors and other electrochemical devices. Copyright © 2015 Elsevier Inc. All rights reserved.

The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing

NASA Astrophysics Data System (ADS)

Chang, Yi-Kuei; Hong, Franklin Chau-Nan

2009-05-01

A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min-1), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 105, a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm2 V-1 s-1. The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing.

PubMed

Chang, Yi-Kuei; Hong, Franklin Chau-Nan

2009-05-13

A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min(-1)), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 10(5), a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm(2) V(-1) s(-1). The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

Transport properties of ultrathin BaFe1.84Co0.16As2 superconducting nanowires

NASA Astrophysics Data System (ADS)

Yuan, Pusheng; Xu, Zhongtang; Li, Chen; Quan, Baogang; Li, Junjie; Gu, Changzhi; Ma, Yanwei

2018-07-01

Superconducting nanowire single-photon detectors (SNSPDs) have an absolute advantage over other types of single-photon detectors, except for the low operating temperature. Therefore, much effort has been devoted to finding high-temperature superconducting materials that are suitable for preparing SNSPDs. Copper-based and MgB2 ultrathin superconducting nanowires have already been reported. However, the transport properties of iron-based ultrathin superconducting nanowires have not been studied. In this work, a 10 nm thick × 200 nm wide × 30 μm long high-quality superconducting nanowire was fabricated from ultrathin BaFe1.84Co0.16As2 films by a lift-off process. The precursor BaFe1.84Co0.16As2 film with a thickness of 10 nm and root-mean-square roughness of 1 nm was grown on CaF2 substrates by pulsed laser deposition. The nanowire shows a high superconducting critical temperature {T}{{c}}{{zero}} = 20 K with a narrow transition width of ΔT = 2.5 K and exhibits a high critical current density J c of 1.8 × 107 A cm-2 at 10 K. These results of ultrathin BaFe1.84Co0.16As2 nanowire will attract interest in electronic applications, including SNSPDs.

Nanowire Electron Scattering Spectroscopy

NASA Technical Reports Server (NTRS)

Hunt, Brian; Bronikowsky, Michael; Wong, Eric; VonAllmen, Paul; Oyafuso, Fablano

2009-01-01

Nanowire electron scattering spectroscopy (NESS) has been proposed as the basis of a class of ultra-small, ultralow-power sensors that could be used to detect and identify chemical compounds present in extremely small quantities. State-of-the-art nanowire chemical sensors have already been demonstrated to be capable of detecting a variety of compounds in femtomolar quantities. However, to date, chemically specific sensing of molecules using these sensors has required the use of chemically functionalized nanowires with receptors tailored to individual molecules of interest. While potentially effective, this functionalization requires labor-intensive treatment of many nanowires to sense a broad spectrum of molecules. In contrast, NESS would eliminate the need for chemical functionalization of nanowires and would enable the use of the same sensor to detect and identify multiple compounds. NESS is analogous to Raman spectroscopy, the main difference being that in NESS, one would utilize inelastic scattering of electrons instead of photons to determine molecular vibrational energy levels. More specifically, in NESS, one would exploit inelastic scattering of electrons by low-lying vibrational quantum states of molecules attached to a nanowire or nanotube.

Titanium dioxide@polypyrrole core-shell nanowires for all solid-state flexible supercapacitors

NASA Astrophysics Data System (ADS)

Yu, Minghao; Zeng, Yinxiang; Zhang, Chong; Lu, Xihong; Zeng, Chenghui; Yao, Chenzhong; Yang, Yangyi; Tong, Yexiang

2013-10-01

Herein, we developed a facile two-step process to synthesize TiO2@PPy core-shell nanowires (NWs) on carbon cloth and reported their improved electrochemical performance for flexible supercapacitors (SCs). The fabricated solid-state SC device based on TiO2@PPy core-shell NWs not only has excellent flexibility, but also exhibits remarkable electrochemical performance.Herein, we developed a facile two-step process to synthesize TiO2@PPy core-shell nanowires (NWs) on carbon cloth and reported their improved electrochemical performance for flexible supercapacitors (SCs). The fabricated solid-state SC device based on TiO2@PPy core-shell NWs not only has excellent flexibility, but also exhibits remarkable electrochemical performance. Electronic supplementary information (ESI) available: Experimental details, XRD pattern, FT-IR absorption spectrum and CV curves of TiO2@PPy NWs, and SEM images of the PPy. See DOI: 10.1039/c3nr03578f

The evolvement of pits and dislocations on TiO{sub 2}-B nanowires via oriented attachment growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao Bin; Chen Feng, E-mail: Fengchen@ecust.edu.c; Qu Wenwu

2009-08-15

TiO{sub 2}-B nanowires were synthesized by an ion exchanging-thermal treatment. The unique morphology of pits and dislocations interspersed on TiO{sub 2}-B nanowires were firstly characterized and studied by high-resolution transmission electron microscopy (HRTEM). Oriented attachment is suggested as an important growth mechanism in the evolvement of pits and dislocations on TiO{sub 2}-B nanowires. Lattice shears and fractures were originally formed during the ion exchanging process of the sodium titanate nanowires, which resulted in the formation of primary crystalline units and vacancies in the layered hydrogen titanate nanowires. Then the (110) lattice planes of TiO{sub 2}-B grown in [110] direction ismore » faster than the other lattice planes, which caused the exhibition of long dislocations on TiO{sub 2}-B nanowires. The enlargement of the vacancies, which was caused by the rearrangement of primary crystalline units, should be the reason of the formation of pits. Additionally, the transformation from TiO{sub 2}-B to anatase could be also elucidated by oriented attachment mechanism. - Graphical abstract: The unique morphology of pits and dislocations on TiO{sub 2}-B nanowires shown in high-resolution transmission electron microscopy (HRTEM) and a proposed evolvement mechanism of pits and dislocations on TiO{sub 2}-B nanowires.« less

Analysis of effect of nanoporous alumina substrate coated with polypyrrole nanowire on cell morphology based on AFM topography.

PubMed

El-Said, Waleed Ahmed; Yea, Cheol-Heon; Jung, Mi; Kim, Hyuncheol; Choi, Jeong-Woo

2010-05-01

In this study, in situ electrochemical synthesis of polypyrrole nanowires with nanoporous alumina template was described. The formation of highly ordered porous alumina substrate was demonstrated with Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). In addition, Fourier transform infrared analysis confirmed that polypyrrole (PP) nanowires were synthesized by direct electrochemical oxidation of pyrrole. HeLa cancer cells and HMCF normal cells were immobilized on the polypyrrole nanowires/nanoporous alumina substrates to determine the effects of the substrate on the cell morphology, adhesion and proliferation as well as the biocompatibility of the substrate. Cell adhesion and proliferation were characterized using a standard MTT assay. The effects of the polypyrrole nanowires/nanoporous alumina substrate on the cell morphology were studied by AFM. The nanoporous alumina coated with polypyrrole nanowires was found to exhibit better cell adhesion and proliferation than polystyrene petridish, aluminum foil, 1st anodized and uncoated 2nd anodized alumina substrate. This study showed the potential of the polypyrrole nanowires/nanoporous alumina substrate as biocompatibility electroactive polymer substrate for both healthy and cancer cell cultures applications.

Carbon p Electron Ferromagnetism in Silicon Carbide

PubMed Central

Wang, Yutian; Liu, Yu; Wang, Gang; Anwand, Wolfgang; Jenkins, Catherine A.; Arenholz, Elke; Munnik, Frans; Gordan, Ovidiu D.; Salvan, Georgeta; Zahn, Dietrich R. T.; Chen, Xiaolong; Gemming, Sibylle; Helm, Manfred; Zhou, Shengqiang

2015-01-01

Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic electronic origin. PMID:25758040

Carbon p electron ferromagnetism in silicon carbide

DOE PAGES

Wang, Yutian; Liu, Yu; Wang, Gang; ...

2015-03-11

Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the V SiV C divacancies. Thus, the ferromagnetism is traced down to its microscopic electronic origin.

Modal analysis of the thermal conductivity of nanowires: examining unique thermal transport features.

PubMed

Samaraweera, Nalaka; Larkin, Jason M; Chan, Kin L; Mithraratne, Kumar

2018-06-06

In this study, unique thermal transport features of nanowires over bulk materials are investigated using a combined analysis based on lattice dynamics and equilibrium molecular dynamics (EMD). The evaluation of the thermal conductivity (TC) of Lenard-Jones nanowires becomes feasible due to the multi-step normal mode decomposition (NMD) procedure implemented in the study. A convergence issue of the TC of nanowires is addressed by the NMD implementation for two case studies, which employ pristine nanowires (PNW) and superlattice nanowires. Interestingly, mode relaxation times at low frequencies of acoustic branches exhibit signs of approaching constant values, thus indicating the convergence of TC. The TC evaluation procedure is further verified by implementing EMD-based Green-Kubo analysis, which is based on a fundamentally different physical perspective. Having verified the NMD procedure, the non-monotonic trend of the TC of nanowires is addressed. It is shown that the principal cause for the observed trend is due to the competing effects of long wavelength phonons and phonon-surface scatterings as the nanowire's cross-sectional width is changed. A computational procedure is developed to decompose the different modal contribution to the TC of shell alloy nanowires (SANWs) using virtual crystal NMD and the Allen-Feldman theory. Several important conclusions can be drawn from the results. A propagons to non-propagons boundary appeared, resulting in a cut-off frequency (ω cut ); moreover, as alloy atomic mass is increased, ω cut shifts to lower frequencies. The existence of non-propagons partly causes the low TC of SANWs. It can be seen that modes with low frequencies demonstrate a similar behavior to corresponding modes of PNWs. Moreover, lower group velocities associated with higher alloy atomic mass resulted in a lower TC of SANWs.

Structure of assemblies of metal nanowires in mesoporous alumina membranes studied by EXAFS, XANES, X-ray diffraction and SAXS.

PubMed

Benfield, Robert E; Grandjean, Didier; Dore, John C; Esfahanian, Hamid; Wu, Zhonghua; Kröll, Michael; Geerkens, Marcus; Schmid, Günter

2004-01-01

Mesoporous alumina membranes ("anodic aluminium oxide", or "AAO") are made by anodic oxidation of aluminium metal. These membranes contain hexagonal arrays of parallel non-intersecting cylindrical pores perpendicular to the membrane surface. By varying the anodisation voltage, the pore diameters are controllable within the range 5-250 nm. We have used AAO membranes as templates for the electrochemical deposition of metals within the pores to produce nanowires. These represent assemblies of one-dimensional quantum wires with prospective applications in electronic, optoelectronic and magnetic devices. Detailed characterisation of the structures of these nanowire assemblies on a variety of length scales is essential to understand their physical properties and evaluate their possible applications. We have used EXAFS, XANES, WAXS, high energy X-ray diffraction and SAXS to study their structure and bonding. In this paper we report the results of our studies of four different nanowire systems supported in AAO membranes. These are the ferromagnetic metals iron and cobalt, the superconducting metal tin, and the semiconductor gallium nitride. Iron nanowires in pores of diameter over the range 12 nm-72 nm are structurally very similar to bcc bulk iron. They have a strong preferred orientation within the alumina pores. Their XANES shows significant differences from that of bulk iron, showing that the electronic structure of the iron nanowires depends systematically on their diameter. Cobalt nanowires are composed of a mixture of hcp and fcc phases, but the ratio of the two phases does not depend in a simple way on the pore diameter or preparation conditions. In bulk cobalt, the fcc beta-phase is normally stable only at high temperatures. Strong preferred orientation of the c-axis in the pores was found. Tin nanowires in alumina membranes with pores diameters between 12 nm and 72 nm have a tetragonal beta-structure at ambient temperature and also at 80 K. Magnetic

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: The effect of substrate on magnetic properties of Co/Cu multilayer nanowire arrays

NASA Astrophysics Data System (ADS)

Ren, Yong; Wang, Jian-Bo; Liu, Qing-Fang; Han, Xiang-Hua; Xue, De-Sheng

2009-08-01

Ordered Co/Cu multilayer nanowire arrays have been fabricated into anodic aluminium oxide templates with Ag and Cu substrate by direct current electrodeposition. This paper studies the morphology, structure and magnetic properties by transmission electron microscopy, selective area electron diffraction, x-ray diffraction, and vibrating sample magnetometer. X-ray diffraction patterns reveal that both as-deposited nanowire arrays films exhibit face-centred cubic structure. Magnetic measurements indicate that the easy magnetization direction of Co/Cu multilayer nanowire arrays films on Ag substrate is perpendicular to the long axis of nanowire, whereas the easy magnetization direction of the sample with Cu substrate is parallel to the long axis of nanowire. The change of easy magnetization direction attributed to different substrates, and the magnetic properties of the nanowire arrays are discussed.

High-Switching-Ratio Photodetectors Based on Perovskite CH₃NH₃PbI₃ Nanowires.

PubMed

Zhang, Xin; Liu, Caichi; Ren, Gang; Li, Shiyun; Bi, Chenghao; Hao, Qiuyan; Liu, Hui

2018-05-10

Hybrid organic-inorganic perovskite materials have attracted extensive attention due to their impressive performance in photovoltaic devices. One-dimensional perovskite CH₃NH₃PbI₃ nanomaterials, possessing unique structural features such as large surface-to-volume ratio, anisotropic geometry and quantum confinement, may have excellent optoelectronic properties, which could be utilized to fabricate high-performance photodetectors. However, in comparison to CH₃NH₃PbI₃ thin films, reports on the fabrication of CH₃NH₃PbI₃ nanowires for optoelectrical application are rather limited. Herein, a two-step spin-coating process has been utilized to fabricate pure-phase and single-crystalline CH₃NH₃PbI₃ nanowires on a substrate without mesoporous TiO₂ or Al₂O₃. The size and density of CH₃NH₃PbI₃ nanowires can be easily controlled by changing the PbI₂ precursor concentration. The as-prepared CH₃NH₃PbI₃ nanowires are utilized to fabricate photodetectors, which exhibit a fairly high switching ratio of ~600, a responsivity of 55 mA/W, and a normalized detectivity of 0.5 × 10 11 jones under 532 nm light illumination (40 mW/cm²) at a very low bias voltage of 0.1 V. The as-prepared perovskite CH₃NH₃PbI₃ nanowires with excellent optoelectronic properties are regarded to be a potential candidate for high-performance photodetector application.

Highly insulating ferromagnetic cobaltite heterostructures

DOE PAGES

Choi, Woo Seok; Kang, Kyeong Tae; Jeen, Hyoungjeen; ...

2017-04-02

Ferromagnetic insulators are rather rare but possess great technological potential in, for example, spintronics. Individual control of ferromagnetic properties and electronic transport provides a useful design concept of multifunctional oxide heterostructures. We studied the close correlation among the magnetism, atomic structure, and electronic structure of oxide heterostructures composed of the ferromagnetic perovskite LaCoO 3 and the antiferromagnetic brownmillerite SrCoO 2.5 epitaxial thin film layers. By reversing the stacking sequence of the two layers, we could individually modify the electric resistance and saturation magnetic moment. Lastly, the ferromagnetic insulating behavior in the heterostructures was understood in terms of the electronic reconstructionmore » at the oxide surface/interfaces and crystalline quality of the constituent layers.« less

Highly insulating ferromagnetic cobaltite heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Woo Seok; Kang, Kyeong Tae; Jeen, Hyoungjeen

Ferromagnetic insulators are rather rare but possess great technological potential in, for example, spintronics. Individual control of ferromagnetic properties and electronic transport provides a useful design concept of multifunctional oxide heterostructures. We studied the close correlation among the magnetism, atomic structure, and electronic structure of oxide heterostructures composed of the ferromagnetic perovskite LaCoO 3 and the antiferromagnetic brownmillerite SrCoO 2.5 epitaxial thin film layers. By reversing the stacking sequence of the two layers, we could individually modify the electric resistance and saturation magnetic moment. Lastly, the ferromagnetic insulating behavior in the heterostructures was understood in terms of the electronic reconstructionmore » at the oxide surface/interfaces and crystalline quality of the constituent layers.« less

Misfit-guided self-organization of anti-correlated Ge quantum dot arrays on Si nanowires

PubMed Central

Kwon, Soonshin; Chen, Zack C.Y.; Kim, Ji-Hun; Xiang, Jie

2012-01-01

Misfit-strain guided growth of periodic quantum dot (QD) arrays in planar thin film epitaxy has been a popular nanostructure fabrication method. Engineering misfit-guided QD growth on a nanoscale substrate such as the small curvature surface of a nanowire represents a new approach to self-organized nanostructure preparation. Perhaps more profoundly, the periodic stress underlying each QD and the resulting modulation of electro-optical properties inside the nanowire backbone promise to provide a new platform for novel mechano-electronic, thermoelectronic, and optoelectronic devices. Herein, we report a first experimental demonstration of self-organized and self-limited growth of coherent, periodic Ge QDs on a one dimensional Si nanowire substrate. Systematic characterizations reveal several distinctively different modes of Ge QD ordering on the Si nanowire substrate depending on the core diameter. In particular, Ge QD arrays on Si nanowires of around 20 nm diameter predominantly exhibit an anti-correlated pattern whose wavelength agrees with theoretical predictions. The correlated pattern can be attributed to propagation and correlation of misfit strain across the diameter of the thin nanowire substrate. The QD array growth is self-limited as the wavelength of the QDs remains unchanged even after prolonged Ge deposition. Furthermore, we demonstrate a direct kinetic transformation from a uniform Ge shell layer to discrete QD arrays by a post-growth annealing process. PMID:22889063

The controlled growth of GaN nanowires.

PubMed

Hersee, Stephen D; Sun, Xinyu; Wang, Xin

2006-08-01

This paper reports a scalable process for the growth of high-quality GaN nanowires and uniform nanowire arrays in which the position and diameter of each nanowire is precisely controlled. The approach is based on conventional metalorganic chemical vapor deposition using regular precursors and requires no additional metal catalyst. The location, orientation, and diameter of each GaN nanowire are controlled using a thin, selective growth mask that is patterned by interferometric lithography. It was found that use of a pulsed MOCVD process allowed the nanowire diameter to remain constant after the nanowires had emerged from the selective growth mask. Vertical GaN nanowire growth rates in excess of 2 mum/h were measured, while remarkably the diameter of each nanowire remained constant over the entire (micrometer) length of the nanowires. The paper reports transmission electron microscopy and photoluminescence data.

Ultrafine manganese dioxide nanowire network for high-performance supercapacitors.

PubMed

Jiang, Hao; Zhao, Ting; Ma, Jan; Yan, Chaoyi; Li, Chunzhong

2011-01-28

Ultrafine MnO(2) nanowires with sub-10 nm diameters have been synthesized by a simple process of hydrothermal treatment with subsequent calcinations to form networks that exhibit an enhanced specific capacitance (279 F g(-1) at 1 A g(-1)), high rate capability (54.5% retention at 20 A g(-1)) and good cycling stability (1.7% loss after 1000 cycles).

Geometrical and band-structure effects on phonon-limited hole mobility in rectangular cross-sectional germanium nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tanaka, H., E-mail: tanaka@semicon.kuee.kyoto-u.ac.jp; Mori, S.; Morioka, N.

2014-12-21

We calculated the phonon-limited hole mobility in rectangular cross-sectional [001], [110], [111], and [112]-oriented germanium nanowires, and the hole transport characteristics were investigated. A tight-binding approximation was used for holes, and phonons were described by a valence force field model. Then, scattering probability of holes by phonons was calculated taking account of hole-phonon interaction atomistically, and the linearized Boltzmann's transport equation was solved to calculate the hole mobility at low longitudinal field. The dependence of the hole mobility on nanowire geometry was analyzed in terms of the valence band structure of germanium nanowires, and it was found that the dependencemore » was qualitatively reproduced by considering an average effective mass and the density of states of holes. The calculation revealed that [110] germanium nanowires with large height along the [001] direction show high hole mobility. Germanium nanowires with this geometry are also expected to exhibit high electron mobility in our previous work, and thus they are promising for complementary metal-oxide-semiconductor (CMOS) applications.« less

Organic nanowire hierarchy over fabric platform for flexible cold cathode

NASA Astrophysics Data System (ADS)

Maiti, Soumen; Narayan Maiti, Uday; Pal, Shreyasi; Chattopadhyay, Kalyan Kumar

2013-11-01

Organic charge transfer (CT) complexes initiated a growing interest in modern electronic devices owing to their easy processability and unique characteristics. In this work, three-dimensional field emitters comprising metal-organic charge transfer complex nanostructures of AgTCNQ and CuTCNQ (TCNQ, 7,7,8,8-tetracyanoquinodimethane) over flexible fabric substrate are realized. Deliberate control over the reaction parameter during organic solid phase reaction leads to modification in structural parameters of the nanowires (i.e. length, diameter) as well as their arrangement atop the carbon fibers. The optimized arrays of AgTCNQ and CuTCNQ nanowires exhibit excellent field electron emission performance with very low turn-on (1.72 and 2.56 V μm-1) and threshold fields (4.21 and 6.33 V μm-1) respectively, which are comparable to those of the best organic field emitters reported to date. The underlying conducting carbon cloth with special woven-like geometry not only offers a flexible platform for nanowire growth, but also provides an additional field enhancement to ease the electron emission.

Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy.

PubMed

Dong, Zhenning; André, Yamina; Dubrovskii, Vladimir G; Bougerol, Catherine; Leroux, Christine; Ramdani, Mohammed R; Monier, Guillaume; Trassoudaine, Agnès; Castelluci, Dominique; Gil, Evelyne

2017-03-24

Gold-free GaAs nanowires on silicon substrates can pave the way for monolithic integration of photonic nanodevices with silicon electronic platforms. It is extensively documented that the self-catalyzed approach works well in molecular beam epitaxy but is much more difficult to implement in vapor phase epitaxies. Here, we report the first gallium-catalyzed hydride vapor phase epitaxy growth of long (more than 10 μm) GaAs nanowires on Si(111) substrates with a high integrated growth rate up to 60 μm h -1 and pure zincblende crystal structure. The growth is achieved by combining a low temperature of 600 °C with high gaseous GaCl/As flow ratios to enable dechlorination and formation of gallium droplets. GaAs nanowires exhibit an interesting bottle-like shape with strongly tapered bases, followed by straight tops with radii as small as 5 nm. We present a model that explains the peculiar growth mechanism in which the gallium droplets nucleate and rapidly swell on the silicon surface but then are gradually consumed to reach a stationary size. Our results unravel the necessary conditions for obtaining gallium-catalyzed GaAs nanowires by vapor phase epitaxy techniques.

Intrinsic ferromagnetism in hexagonal boron nitride nanosheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Si, M. S.; Gao, Daqiang, E-mail: gaodq@lzu.edu.cn, E-mail: xueds@lzu.edu.cn; Yang, Dezheng

2014-05-28

Understanding the mechanism of ferromagnetism in hexagonal boron nitride nanosheets, which possess only s and p electrons in comparison with normal ferromagnets based on localized d or f electrons, is a current challenge. In this work, we report an experimental finding that the ferromagnetic coupling is an intrinsic property of hexagonal boron nitride nanosheets, which has never been reported before. Moreover, we further confirm it from ab initio calculations. We show that the measured ferromagnetism should be attributed to the localized π states at edges, where the electron-electron interaction plays the role in this ferromagnetic ordering. More importantly, we demonstratemore » such edge-induced ferromagnetism causes a high Curie temperature well above room temperature. Our systematical work, including experimental measurements and theoretical confirmation, proves that such unusual room temperature ferromagnetism in hexagonal boron nitride nanosheets is edge-dependent, similar to widely reported graphene-based materials. It is believed that this work will open new perspectives for hexagonal boron nitride spintronic devices.« less

The Mechanical Properties of Nanowires

PubMed Central

Wang, Shiliang; Shan, Zhiwei

2017-01-01

Applications of nanowires into future generation nanodevices require a complete understanding of the mechanical properties of the nanowires. A great research effort has been made in the past two decades to understand the deformation physics and mechanical behaviors of nanowires, and to interpret the discrepancies between experimental measurements and theoretical predictions. This review focused on the characterization and understanding of the mechanical properties of nanowires, including elasticity, plasticity, anelasticity and strength. As the results from the previous literature in this area appear inconsistent, a critical evaluation of the characterization techniques and methodologies were presented. In particular, the size effects of nanowires on the mechanical properties and their deformation mechanisms were discussed. PMID:28435775

Methods for synthesizing metal oxide nanowires

DOEpatents

Sunkara, Mahendra Kumar; Kumar, Vivekanand; Kim, Jeong H.; Clark, Ezra Lee

2016-08-09

A method of synthesizing a metal oxide nanowire includes the steps of: combining an amount of a transition metal or a transition metal oxide with an amount of an alkali metal compound to produce a mixture; activating a plasma discharge reactor to create a plasma discharge; exposing the mixture to the plasma discharge for a first predetermined time period such that transition metal oxide nanowires are formed; contacting the transition metal oxide nanowires with an acid solution such that an alkali metal ion is exchanged for a hydrogen ion on each of the transition metal oxide nanowires; and exposing the transition metal oxide nanowires to the plasma discharge for a second predetermined time period to thermally anneal the transition metal oxide nanowires. Transition metal oxide nanowires produced using the synthesis methods described herein are also provided.

Detection of Prohibited Fish Drugs Using Silver Nanowires as Substrate for Surface-Enhanced Raman Scattering

PubMed Central

Song, Jia; Huang, Yiqun; Fan, Yuxia; Zhao, Zhihui; Yu, Wansong; Rasco, Barbara A.; Lai, Keqiang

2016-01-01

Surface-enhanced Raman scattering or surface-enhanced Raman spectroscopy (SERS) is a promising detection technology, and has captured increasing attention. Silver nanowires were synthesized using a rapid polyol method and optimized through adjustment of the molar ratio of poly(vinyl pyrrolidone) and silver nitrate in a glycerol system. Ultraviolet-visible spectrometry, X-ray diffraction, and transmission electron microscopy were used to characterize the silver nanowires. The optimal silver nanowires were used as a SERS substrate to detect prohibited fish drugs, including malachite green, crystal violet, furazolidone, and chloramphenicol. The SERS spectra of crystal violet could be clearly identified at concentrations as low as 0.01 ng/mL. The minimum detectable concentration for malachite green was 0.05 ng/mL, and for both furazolidone and chloramphenicol were 0.1 μg/mL. The results showed that the as-prepared Ag nanowires SERS substrate exhibits high sensitivity and activity. PMID:28335303

Giant piezoelectric size effects in zinc oxide and gallium nitride nanowires. A first principles investigation.

PubMed

Agrawal, Ravi; Espinosa, Horacio D

2011-02-09

Nanowires made of materials with noncentrosymmetric crystal structure are under investigation for their piezoelectric properties and suitability as building blocks for next-generation self-powered nanodevices. In this work, we investigate the size dependence of piezoelectric coefficients in nanowires of two such materials - zinc oxide and gallium nitride. Nanowires, oriented along their polar axis, ranging from 0.6 to 2.4 nm in diameter were modeled quantum mechanically. A giant piezoelectric size effect is identified for both GaN and ZnO nanowires. However, GaN exhibits a larger and more extended size dependence than ZnO. The observed size effect is discussed in the context of charge redistribution near the free surfaces leading to changes in local polarization. The study reveals that local changes in polarization and reduction of unit cell volume with respect to bulk values lead to the observed size effect. These results have strong implication in the field of energy harvesting, as piezoelectric voltage output scales with the piezoelectric coefficient.

Catalyst patterning for nanowire devices

NASA Technical Reports Server (NTRS)

Li, Jun (Inventor); Cassell, Alan M. (Inventor); Han, Jie (Inventor)

2004-01-01

Nanowire devices may be provided that are based on carbon nanotubes or single-crystal semiconductor nanowires. The nanowire devices may be formed on a substrate. Catalyst sites may be formed on the substrate. The catalyst sites may be formed using lithography, thin metal layers that form individual catalyst sites when heated, collapsible porous catalyst-filled microscopic spheres, microscopic spheres that serve as masks for catalyst deposition, electrochemical deposition techniques, and catalyst inks. Nanowires may be grown from the catalyst sites.

Temperature limited heater utilizing non-ferromagnetic conductor

DOEpatents

Vinegar,; Harold J. , Harris; Kelvin, Christopher [Houston, TX

2012-07-17

A heater is described. The heater includes a ferromagnetic conductor and an electrical conductor electrically coupled to the ferromagnetic conductor. The ferromagnetic conductor is positioned relative to the electrical conductor such that an electromagnetic field produced by time-varying current flow in the ferromagnetic conductor confines a majority of the flow of the electrical current to the electrical conductor at temperatures below or near a selected temperature.

Growth control, structure, chemical state, and photoresponse of CuO-CdS core-shell heterostructure nanowires.

PubMed

El Mel, A A; Buffière, M; Bouts, N; Gautron, E; Tessier, P Y; Henzler, K; Guttmann, P; Konstantinidis, S; Bittencourt, C; Snyders, R

2013-07-05

The growth of single-crystal CuO nanowires by thermal annealing of copper thin films in air is studied. We show that the density, length, and diameter of the nanowires can be controlled by tuning the morphology and structure of the copper thin films deposited by DC magnetron sputtering. After identifying the optimal conditions for the growth of CuO nanowires, chemical bath deposition is employed to coat the CuO nanowires with CdS in order to form p-n nanojunction arrays. As revealed by high-resolution TEM analysis, the thickness of the polycrystalline CdS shell increases when decreasing the diameter of the CuO core for a given time of CdS deposition. Near-edge x-ray absorption fine-structure spectroscopy combined with transmission x-ray microscopy allows the chemical analysis of isolated nanowires. The absence of modification in the spectra at the Cu L and O K edges after the deposition of CdS on the CuO nanowires indicates that neither Cd nor S diffuse into the CuO phase. We further demonstrate that the core-shell nanowires exhibit the I-V characteristic of a resistor instead of a diode. The electrical behavior of the device was found to be photosensitive, since increasing the incident light intensity induces an increase in the collected electrical current.

Electron Transport Properties of Ge nanowires

NASA Astrophysics Data System (ADS)

Hanrath, Tobias; Khondaker, Saiful I.; Yao, Zhen; Korgel, Brian A.

2003-03-01

Electron Transport Properties of Ge nanowires Tobias Hanrath*, Saiful I. Khondaker, Zhen Yao, Brian A. Korgel* *Dept. of Chemical Engineering, Dept. of Physics, Texas Materials Institute, and Center for Nano- and Molecular Science and Technology University of Texas at Austin, Austin, Texas 78712-1062 e-mail: korgel@mail.che.utexas.edu Germanium (Ge) nanowires with diameters ranging from 6 to 50 nm and several micrometer in length were grown via a supercritical fluid-liquid-solid synthesis. Parallel electron energy loss spectroscopy (PEELS) was employed to study the band structure and electron density in the Ge nanowires. The observed increase in plasmon peak energy and peak width with decreasing nanowire diameter is attributed to quantum confinement effects. For electrical characterization, Ge nanowires were deposited onto a patterned Si/SiO2 substrate. E-beam lithography was then used to form electrode contacts to individual nanowires. The influence of nanowire diameter, surface chemistry and crystallographic defects on electron transport properties were investigated and the comparison of Ge nanowire conductivity with respect to bulk, intrinsic Ge will be presented.

Domain-wall guided nucleation of superconductivity in hybrid ferromagnet-superconductor-ferromagnet layered structures.

PubMed

Gillijns, W; Aladyshkin, A Yu; Lange, M; Van Bael, M J; Moshchalkov, V V

2005-11-25

Domain-wall superconductivity is studied in a superconducting Nb film placed between two ferromagnetic Co/Pd multilayers with perpendicular magnetization. The parameters of top and bottom ferromagnetic films are chosen to provide different coercive fields, so that the magnetic domain structure of the ferromagnets can be selectively controlled. From the dependence of the critical temperature Tc on the applied magnetic field H, we have found evidence for domain-wall superconductivity in this three-layered F/S/F structure for different magnetic domain patterns. The phase boundary, calculated numerically for this structure from the linearized Ginzburg-Landau equation, is in good agreement with the experimental data.

Semiconductor nanowire devices: Novel morphologies and applications to electrogenic biological systems

NASA Astrophysics Data System (ADS)

Timko, Brian Paul

The interface between nanoscale semiconductors and biological systems represents a powerful means for molecular-scale, two-way communication between these two diverse yet complementary systems. In this thesis, I present a general methodology for the synthesis of semiconductor nanowires with rationally-defined material composition and geometry. Specifically, I demonstrate that this technique can be used to fabricate silicon nanowires, hollow nanostructures (e.g. nanotubes, nanocones and branched tubular networks), and Ge/Si heterostructures that exhibit 1D hole gasses. Using bottom-up assembly techniques, nanostructures are subsequently built into arrays containing up to tens of nanowire field-effect transistors (NW-FETs) that exhibit exquisite sensitivity to local charges. Significantly, this robust assembly technique enables integration of disparate materials (e.g. n- and p-type silicon nanowires) on virtually any type of substrate. These arrays are particularly useful for integration with biological systems. I will demonstrate that at the single-cell level, silicon nanowire device arrays can be integrated with mammalian neurons. Discrete hybrid structures enable neuronal stimulation and recording at the axon, dendrite, or soma with high sensitivity and spatial resolution, while aligned arrays containing up to 50 devices can be used to measure the speed and temporal evolution of signals or to interact with a single cell as multiple inputs and outputs. I analyze the shape and magnitude of reported signals, and place within the context of previously reported results. Hybrid interfaces can also be extended to entire organs such as embryonic chicken hearts. NW-FET signals are synchronized with the beating heart, and the signal amplitude is directly related to the device sensitivity. Multiplexed measurements made from NW-FET arrays further show that signal propagation across the myocardium can be mapped, with a potential resolution significantly better than

Transport properties of ultrathin YBa2Cu3O7 -δ nanowires: A route to single-photon detection

NASA Astrophysics Data System (ADS)

Arpaia, Riccardo; Golubev, Dmitri; Baghdadi, Reza; Ciancio, Regina; Dražić, Goran; Orgiani, Pasquale; Montemurro, Domenico; Bauch, Thilo; Lombardi, Floriana

2017-08-01

We report on the growth and characterization of ultrathin YBa2Cu3O7 -δ (YBCO) films on MgO (110) substrates, which exhibit superconducting properties at thicknesses down to 3 nm. YBCO nanowires, with thicknesses down to 10 nm and widths down to 65 nm, have also been successfully fabricated. The nanowires protected by a Au capping layer show superconducting properties close to the as-grown films and critical current densities, which are limited by only vortex dynamics. The 10-nm-thick YBCO nanowires without the Au capping present hysteretic current-voltage characteristics, characterized by a voltage switch which drives the nanowires directly from the superconducting to the normal state. We associate such bistability to the presence of localized normal domains within the superconductor. The presence of the voltage switch in ultrathin YBCO nanostructures, characterized by high sheet resistance values and high critical current values, makes our nanowires very attractive devices to engineer single-photon detectors.

Frequency mixer having ferromagnetic film

DOEpatents

Khitun, Alexander; Roshchin, Igor V.; Galatsis, Kosmas; Bao, Mingqiang; Wang, Kang L.

2016-03-29

A frequency conversion device, which may include a radiofrequency (RF) mixer device, includes a substrate and a ferromagnetic film disposed over a surface of the substrate. An insulator is disposed over the ferromagnetic film and at least one microstrip antenna is disposed over the insulator. The ferromagnetic film provides a non-linear response to the frequency conversion device. The frequency conversion device may be used for signal mixing and amplification. The frequency conversion device may also be used in data encryption applications.

SbSI Nanosensors: from Gel to Single Nanowire Devices

NASA Astrophysics Data System (ADS)

Mistewicz, Krystian; Nowak, Marian; Paszkiewicz, Regina; Guiseppi-Elie, Anthony

2017-02-01

The gas-sensing properties of antimony sulfoiodide (SbSI) nanosensors have been tested for humidity and carbon dioxide in nitrogen. The presented low-power SbSI nanosensors have operated at relatively low temperature and have not required heating system for recovery. Functionality of sonochemically prepared SbSI nanosensors made of xerogel as well as single nanowires has been compared. In the latter case, small amount of SbSI nanowires has been aligned in electric field and bonded ultrasonically to Au microelectrodes. The current and photocurrent responses of SbSI nanosensors have been investigated as function of relative humidity. Mechanism of light-induced desorption of H2O from SbSI nanowires' surface has been discussed. SbSI nanosensors have been tested for concentrations from 51 to 106 ppm of CO2 in N2, exhibiting a low detection limit of 40(31) ppm. The current response sensitivity has shown a tendency to decrease with increasing CO2 concentration. The experimental results have been explained taking into account proton-transfer process and Grotthuss' chain reaction, as well as electronic theory of adsorption and catalysis on semiconductors.

Heterojunction metal-oxide-metal Au-Fe{sub 3}O{sub 4}-Au single nanowire device for spintronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reddy, K. M., E-mail: mrkongara@boisestate.edu; Punnoose, Alex; Hanna, Charles

2015-05-07

In this report, we present the synthesis of heterojunction magnetite nanowires in alumina template and describe magnetic and electrical properties from a single nanowire device for spintronics applications. Heterojunction Au-Fe-Au nanowire arrays were electrodeposited in porous aluminum oxide templates, and an extensive and controlled heat treatment process converted Fe segment to nanocrystalline cubic magnetite phase with well-defined Au-Fe{sub 3}O{sub 4} interfaces as confirmed by the transmission electron microscopy. Magnetic measurements revealed Verwey transition shoulder around 120 K and a room temperature coercive field of 90 Oe. Current–voltage (I-V) characteristics of a single Au-Fe{sub 3}O{sub 4}-Au nanowire have exhibited Ohmic behavior. Anomalous positivemore » magnetoresistance of about 0.5% is observed on a single nanowire, which is attributed to the high spin polarization in nanowire device with pure Fe{sub 3}O{sub 4} phase and nanocontact barrier. This work demonstrates the ability to preserve the pristine Fe{sub 3}O{sub 4} and well defined electrode contact metal (Au)–magnetite interface, which helps in attaining high spin polarized current.« less

Enhancement of exchange bias in ferromagnetic/antiferromagnetic core-shell nanoparticles through ferromagnetic domain wall formation

NASA Astrophysics Data System (ADS)

Wu, Rui; Ding, Shilei; Lai, Youfang; Tian, Guang; Yang, Jinbo

2018-01-01

The spin configuration in the ferromagnetic part during the magnetization reversal plays a crucial role in the exchange bias effect. Through Monte Carlo simulation, the exchange bias effect in ferromagnetic-antiferromagnetic core-shell nanoparticles is investigated. Magnetization reversals in the ferromagnetic core were controlled between the coherent rotation and the domain wall motion by modulating the ferromagnetic domain wall width with parameters of uniaxial anisotropy constant and exchange coupling strength. An anomalous monotonic dependence of exchange bias on the uniaxial anisotropy constant is found in systems with small exchange coupling, showing an obvious violation of classic Meiklejohn-Bean model, while domain walls are found to form close to the interface and propagate in the ferromagnetic core with larger uniaxial anisotropy in both branches of the hysteresis. The asymmetric magnetization reversal with the formation of a spherical domain wall dramatically reduces the coercive field in the ascending branch, leading to the enhancement of the exchange bias. The results provide another degree of freedom to optimize the magnetic properties of magnetic nanoparticles for applications.

Spin Currents and Spin Orbit Torques in Ferromagnets and Antiferromagnets

NASA Astrophysics Data System (ADS)

Hung, Yu-Ming

logic devices. I then demonstrate the device operation by using micromagnetic modeling which involves studying the magnetic coupling induced by fringe fields from chiral DWs in perpendicularly magnetized nanowires. The last part of my thesis project reports spin transport and spin-Hall magnetoresistance (SMR) in yttrium iron garnet Y3Fe5O 12 (YIG)/NiO/Pt trilayers with varied NiO thickness. To characterize the spin transport through NiO we excite ferromagnetic resonance in YIG with a microwave frequency magnetic field and detect the voltage associated with the inverse spin-Hall effect (ISHE) in the Pt layer. The ISHE signal is found to decay exponentially with the NiO thickness with a characteristic decay length of 3.9 nm. However, in contrast to the ISHE response, as the NiO thickness increases the SMR signal goes towards zero abruptly at a NiO thickness of 4 nm, highlighting the different length scales associated with the spin-transport in NiO and SMR in such trilayers.

A study of ferromagnetic signals in SrTiO{sub 3} nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kovacs, P.; Des Roches, B.; Crandles, D. A.

It has been suggested that ferromagnetism may be a universal feature of nanoparticles related to particle size. We study this claim for the case of commercially produced SrTiO{sub 3} nanoparticles purchased from Alfa-Aesar. Both loosely-packed nanoparticle samples and pellets formed using uniaxial pressure were studied. Both loose and pressed samples were annealed in either air or in vacuum of 5×10{sup −6} Torr at 600, 800 and 1000°C. Then x-ray diffraction and SQUID measurements were made on the resulting samples. It was found that annealed loose powder samples always had a linear diamagnetic magnetization versus field response, while their pressed pelletmore » counterparts exhibit a ferromagnetic hysteresis component in addition to the linear diamagnetic signal. Williamson-Hall analysis reveals that the particle size in pressed pellet samples increases with annealing temperature but does not change significantly in loose powder samples. The main conclusion is that the act of pressing pellets in a die introduces a spurious ferromagnetic signal into SQUID measurements.« less

Current induced domain wall motion in antiferromagnetically coupled (Co70Fe30/Pd) multilayer nanowires

NASA Astrophysics Data System (ADS)

Meng, Zhaoliang; He, Shikun; Huang, Lisen; Qiu, Jinjun; Zhou, Tiejun; Panagopoulos, Christos; Han, Guchang; Teo, Kie-Leong

2016-10-01

We investigate the current induced domain wall (DW) motion in the ultrathin CoFe/Pd multilayer based synthetically antiferromagnetic (SAF) structure nanowires by anomalous Hall effect measurement. The threshold current density (Jth) for the DW displacement decreases and the DW velocity (v) increases accordingly with the exchange coupling Jex between the top and bottom ferromagnetic CoFe/Pd multilayers. The lowest Jth = 9.3 × 1010 A/m2 and a maximum v = 150 m/s with J = 1.5 × 1012 A/m2 are achieved due to the exchange coupling torque (ECT) generated in the SAF structure. The strength of ECT is dependent on both of Jex and the strong spin-orbit torque mainly generated by Ta layer.

Stabilization of weak ferromagnetism by strong magnetic response to epitaxial strain in multiferroic BiFeO 3

DOE PAGES

Cooper, Valentino R.; Lee, Jun Hee; Krogel, Jaron T.; ...

2015-08-06

Multiferroic BiFeO 3 exhibits excellent magnetoelectric coupling critical for magnetic information processing with minimal power consumption. Thus, the degenerate nature of the easy spin axis in the (111) plane presents roadblocks for real world applications. Here, we explore the stabilization and switchability of the weak ferromagnetic moments under applied epitaxial strain using a combination of first-principles calculations and group-theoretic analyses. We demonstrate that the antiferromagnetic moment vector can be stabilized along unique crystallographic directions ([110] and [-110]) under compressive and tensile strains. A direct coupling between the anisotropic antiferrodistortive rotations and Dzyaloshinskii-Moria interactions drives the stabilization of weak ferromagnetism. Furthermore,more » energetically competing C- and G-type magnetic orderings are observed at high compressive strains, suggesting that it may be possible to switch the weak ferromagnetism on and off under application of strain. These findings emphasize the importance of strain and antiferrodistortive rotations as routes to enhancing induced weak ferromagnetism in multiferroic oxides.« less

Enhanced Ferromagnetism in Nanoscale GaN:Mn Wires Grown on GaN Ridges.

PubMed

Cheng, Ji; Jiang, Shengxiang; Zhang, Yan; Yang, Zhijian; Wang, Cunda; Yu, Tongjun; Zhang, Guoyi

2017-05-02

The problem of weak magnetism has hindered the application of magnetic semiconductors since their invention, and on the other hand, the magnetic mechanism of GaN-based magnetic semiconductors has been the focus of long-standing debate. In this work, nanoscale GaN:Mn wires were grown on the top of GaN ridges by metalorganic chemical vapor deposition (MOCVD), and the superconducting quantum interference device (SQUID) magnetometer shows that its ferromagnetism is greatly enhanced. Secondary ion mass spectrometry (SIMS) and energy dispersive spectroscopy (EDS) reveal an obvious increase of Mn composition in the nanowire part, and transmission electron microscopy (TEM) and EDS mapping results further indicate the correlation between the abundant stacking faults (SFs) and high Mn doping. When further combined with the micro-Raman results, the magnetism in GaN:Mn might be related not only to Mn concentration, but also to some kinds of built-in defects introduced together with the Mn doping or the SFs.

Environmental-Friendly and Facile Synthesis of Co3O4 Nanowires and Their Promising Application with Graphene in Lithium-Ion Batteries

NASA Astrophysics Data System (ADS)

Xu, Zhiqiang; Liu, Wei; Yang, Yuanyi; Sun, Lijuan; Deng, Yi; Liao, Li

2017-12-01

In this work, we developed an eco-friendly strategy for preparing Co3O4 nanowires. The process consisted of two steps: controllable synthesis of metal cobalt nanowires followed by a facile air-oxidization step. The 1D nanowire structure with a high aspect ratio was easily achieved via a magnetic-field-assisted self-assembly of cobalt ion complexes during reduction. After air-calcinations, the Co3O4 nanowires were prepared in large scale and ready to be used as the anode material for lithium-ion batteries. The Co3O4 nanowires, which possessed a length ranging from 3 to 8 μm with the aspect ratio more than 15, exhibited a reversible lithium storage capacity up to 790 mAh/g when using a small amount of defect-free graphene flakes as conductive additives. The superior electrochemical performances were ascribable to the synergistic "flat-on" effect between the 1D nanowires and the 2D graphene. Therefore, the Co3O4 nanowire/graphene composite holds promising application for lithium-ion batteries.

Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors

NASA Astrophysics Data System (ADS)

McAlpine, Michael C.; Ahmad, Habib; Wang, Dunwei; Heath, James R.

2007-05-01

The development of a robust method for integrating high-performance semiconductors on flexible plastics could enable exciting avenues in fundamental research and novel applications. One area of vital relevance is chemical and biological sensing, which if implemented on biocompatible substrates, could yield breakthroughs in implantable or wearable monitoring systems. Semiconducting nanowires (and nanotubes) are particularly sensitive chemical sensors because of their high surface-to-volume ratios. Here, we present a scalable and parallel process for transferring hundreds of pre-aligned silicon nanowires onto plastic to yield highly ordered films for low-power sensor chips. The nanowires are excellent field-effect transistors, and, as sensors, exhibit parts-per-billion sensitivity to NO2, a hazardous pollutant. We also use SiO2 surface chemistries to construct a `nano-electronic nose' library, which can distinguish acetone and hexane vapours via distributed responses. The excellent sensing performance coupled with bendable plastic could open up opportunities in portable, wearable or even implantable sensors.

Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors

PubMed Central

McAlpine, Michael C.; Ahmad, Habib; Wang, Dunwei; Heath, James R.

2013-01-01

The development of a robust method for integrating high-performance semiconductors on flexible plastics could enable exciting avenues in fundamental research and novel applications. One area of vital relevance is chemical and biological sensing, which if implemented on biocompatible substrates, could yield breakthroughs in implantable or wearable monitoring systems. Semiconducting nanowires (and nanotubes) are particularly sensitive chemical sensors because of their high surface-to-volume ratios. Here, we present a scalable and parallel process for transferring hundreds of pre-aligned silicon nanowires onto plastic to yield highly ordered films for low-power sensor chips. The nanowires are excellent field-effect transistors, and, as sensors, exhibit parts-per-billion sensitivity to NO2, a hazardous pollutant. We also use SiO2 surface chemistries to construct a ‘nano-electronic nose’ library, which can distinguish acetone and hexane vapours via distributed responses. The excellent sensing performance coupled with bendable plastic could open up opportunities in portable, wearable or even implantable sensors. PMID:17450146

Highly ordered nanowire arrays on plastic substrates for ultrasensitive flexible chemical sensors.

PubMed

McAlpine, Michael C; Ahmad, Habib; Wang, Dunwei; Heath, James R

2007-05-01

The development of a robust method for integrating high-performance semiconductors on flexible plastics could enable exciting avenues in fundamental research and novel applications. One area of vital relevance is chemical and biological sensing, which if implemented on biocompatible substrates, could yield breakthroughs in implantable or wearable monitoring systems. Semiconducting nanowires (and nanotubes) are particularly sensitive chemical sensors because of their high surface-to-volume ratios. Here, we present a scalable and parallel process for transferring hundreds of pre-aligned silicon nanowires onto plastic to yield highly ordered films for low-power sensor chips. The nanowires are excellent field-effect transistors, and, as sensors, exhibit parts-per-billion sensitivity to NO2, a hazardous pollutant. We also use SiO2 surface chemistries to construct a 'nano-electronic nose' library, which can distinguish acetone and hexane vapours via distributed responses. The excellent sensing performance coupled with bendable plastic could open up opportunities in portable, wearable or even implantable sensors.

Electrically Injected UV-Visible Nanowire Lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, George T.; Li, Changyi; Li, Qiming

2015-09-01

There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasersmore » emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.« less

Vertically integrated logic circuits constructed using ZnO-nanowire-based field-effect transistors on plastic substrates.

PubMed

Kang, Jeongmin; Moon, Taeho; Jeon, Youngin; Kim, Hoyoung; Kim, Sangsig

2013-05-01

ZnO-nanowire-based logic circuits were constructed by the vertical integration of multilayered field-effect transistors (FETs) on plastic substrates. ZnO nanowires with an average diameter of -100 nm were synthesized by thermal chemical vapor deposition for use as the channel material in FETs. The ZnO-based FETs exhibited a high I(ON)/I(OFF) of > 10(6), with the characteristic of n-type depletion modes. For vertically integrated logic circuits, three multilayer FETs were sequentially prepared. The stacked FETs were connected in series via electrodes, and C-PVPs were used for the layer-isolation material. The NOT and NAND gates exhibited large logic-swing values of -93%. These results demonstrate the feasibility of three dimensional flexible logic circuits.

Interface studies of N2 plasma-treated ZnSnO nanowire transistors using low-frequency noise measurements.

PubMed

Kim, Seongmin; Kim, Hwansoo; Janes, David B; Ju, Sanghyun

2013-08-02

Due to the large surface-to-volume ratio of nanowires, the quality of nanowire-insulator interfaces as well as the nanowire surface characteristics significantly influence the electrical characteristics of nanowire transistors (NWTs). To improve the electrical characteristics by doping or post-processing, it is important to evaluate the interface characteristics and stability of NWTs. In this study, we have synthesized ZnSnO (ZTO) nanowires using the chemical vapor deposition method, characterized the composition of ZTO nanowires using x-ray photoelectron spectroscopy, and fabricated ZTO NWTs. We have characterized the current-voltage characteristics and low-frequency noise of ZTO NWTs in order to investigate the effects of interface states on subthreshold slope (SS) and the noise before and after N2 plasma treatments. The as-fabricated device exhibited a SS of 0.29 V/dec and Hooge parameter of ~1.20 × 10(-2). Upon N2 plasma treatment with N2 gas flow rate of 40 sccm (20 sccm), the SS improved to 0.12 V/dec (0.21 V/dec) and the Hooge parameter decreased to ~4.99 × 10(-3) (8.14 × 10(-3)). The interface trap densities inferred from both SS and low-frequency noise decrease upon plasma treatment, with the highest flow rate yielding the smallest trap density. These results demonstrate that the N2 plasma treatment decreases the interface trap states and defects on ZTO nanowires, thereby enabling the fabrication of high-quality nanowire interfaces.

Conductance of kinked nanowires

NASA Astrophysics Data System (ADS)

Cook, B. G.; Varga, K.

2011-01-01

The conductance properties of kinked nanowires are studied by first-principles transport calculations within a recently developed complex potential framework. Using prototypical examples of monoatomic Au chains as well as small diameter single-crystalline silicon nanowires we show that transmission strongly depends on the kink geometry and one can tune the conductance properties by the kink angle and other geometrical factors. In the case of a silicon nanowire the presence of a kink drastically reduces the conductance.

PREFACE: Synthesis and integration of nanowires

NASA Astrophysics Data System (ADS)

Samuelson, L.

2006-06-01

The field of semiconductor nanowires has attracted much attention in recent years, from the areas of basic materials science, advanced characterization and technology, as well as from the perspective of the applications of nanowires. Research on large-sized whiskers and wires had already begun in the 1960s with the pioneering work of Wagner, as well as by other researchers. It was, however, in the early 1990s that Kenji Hiruma at Hitachi Central Research Laboratories in Japan first succeeded in developing methods for the growth of nanowires with dimensions on the scale of 10-100 nm, thereby initiating the field of growth and applications of nanowires, with a strong emphasis on epitaxial nucleation of nanowires on a single-crystalline substrate. Starting from the mid-1990s, the field developed very rapidly with the number of papers on the subject growing from ten per year to several thousand papers on the subject published annually today, although with a rather generous definition of the concept of nanowires. With this rapid development we have seen many new and different approaches to the growth of nanowires, technological advances leading to a more well-controlled formation of nanowires, new innovative methods for the characterization of structures, as well as a wealth of approaches towards the use of nanowires in electronics, photonics and sensor applications. This issue contains contributions from many different laboratories, each adding significant detail to the development of the field of research. The contributions cover issues such as basic growth, advanced characterization and technology, and application of nanowires. I would like to acknowledge the shared responsibilities for this special issue of Nanotechnology on the synthesis and integration of nanowires with my co-Editors, S Tong Lee and M Sunkara, as well as the highly professional support from Dr Nina Couzin, Dr Ian Forbes and the Nanotechnology team from the Institute of Physics Publishing.

Hole-dominated transport in InSb nanowires grown on high-quality InSb films

NASA Astrophysics Data System (ADS)

Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U.

2016-12-01

We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between S b 2 S 3 and I n and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40-60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 1017 cm-3 and 1000 cm2 V-1 s-1, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

Anomalous magnetic properties of 7 nm single-crystal Co3O4 nanowires

NASA Astrophysics Data System (ADS)

Lv, Ping; Zhang, Yan; Xu, Rui; Nie, Jia-Cai; He, Lin

2012-01-01

We present a study of magnetic properties of single-crystal Co3O4 nanowires with diameter about 7 nm. The nanowires expose (111) planes composed of plenty of Co3+ cations and exhibit two order temperatures at 56 K (TN of wire cores) and 73 K (order temperature of wire shells), which are far above TN = 40 K of bulk Co3O4. This novel behavior is attributed to symmetry breaking of surface Co3+ cations and magnetic proximity effect. The nanowire shells show macroscopic residual magnetic moments. Cooling in a magnetic field, a fraction of the residual moments are tightly pinned to the antiferromagnetic lattice, which results in an obvious horizontal and vertical shift of hysteresis loop. Our experiment demonstrates that the exchange bias field HE and the pinned magnetic moments Mpin follow a simple expression HE = aMpin with a a constant.

Controllable High-Speed Rotation of Nanowires

NASA Astrophysics Data System (ADS)

Fan, D. L.; Zhu, F. Q.; Cammarata, R. C.; Chien, C. L.

2005-06-01

We report a versatile method for executing controllable high-speed rotation of nanowires by ac voltages applied to multiple electrodes. The rotation of the nanowires can be instantly switched on or off with precisely controlled rotation speed (to at least 1800 rpm), definite chirality, and total angle of rotation. We have determined the torque due to the fluidic drag force on nanowire of different lengths. We also demonstrate a micromotor using a rotating nanowire driving a dust particle into circular motion. This method has been used to rotate magnetic and nonmagnetic nanowires as well as carbon nanotubes.

Nanowire growth and sublimation: CdTe quantum dots in ZnTe nanowires

NASA Astrophysics Data System (ADS)

Orrù, M.; Robin, E.; Den Hertog, M.; Moratis, K.; Genuist, Y.; André, R.; Ferrand, D.; Cibert, J.; Bellet-Amalric, E.

2018-04-01

The role of the sublimation of the compound and of the evaporation of the constituents from the gold nanoparticle during the growth of semiconductor nanowires is exemplified with CdTe-ZnTe heterostructures. Operating close to the upper temperature limit strongly reduces the amount of Cd present in the gold nanoparticle and the density of adatoms on the nanowire sidewalls. As a result, the growth rate is small and strongly temperature dependent, but a good control of the growth conditions allows the incorporation of quantum dots in nanowires with sharp interfaces and adjustable shape, and it minimizes the radial growth and the subsequent formation of additional CdTe clusters on the nanowire sidewalls, as confirmed by photoluminescence. Uncapped CdTe segments dissolve into the gold nanoparticle when interrupting the flux, giving rise to a bulblike (pendant-droplet) shape attributed to the Kirkendall effect.

Surface plasmon aided high sensitive non-enzymatic glucose sensor using Au/NiAu multilayered nanowire arrays.

PubMed

Wang, Lanfang; Zhu, Weiqi; Lu, Wenbo; Qin, Xiufang; Xu, Xiaohong

2018-07-15

A novel plasmon aided non-enzymatic glucose sensor was first constructed based on the unique half-rough Au/NiAu multilayered nanowire arrays. These multilayered and half-rough nanowires provide high chemical activity and large surface area for glucose oxidation in an alkaline solution. Under visible light irradiation, the surface plasmons originated from Au part enhance the electron transfer in the vertically aligned nanowires, leading to high sensitivity and wide detection range. The resulting sensor exhibits a wide glucose detection concentration range, low detection limit, and high sensitivity for plasmon aided non-enzymatic glucose sensor. Moreover, the detection sensitivity is enhanced by almost 2 folds compared to that in the dark, which significantly enhanced the performance of Au/NiAu multilayered nanowire arrays sensor. An excellent selectivity and acceptable stability were also achieved. These results indicate that surface plasmon aided nanostructures are promising new platforms for the construction of non-enzymatic glucose sensors. Copyright © 2018 Elsevier B.V. All rights reserved.

Emergent ferromagnetism and T -linear scattering in USb 2 at high pressure [Emergent ferromagnetism in USb 2 under pressure

DOE PAGES

Jeffries, Jason R.; Stillwell, Ryan L.; Weir, Samuel T.; ...

2016-05-09

The material USb 2 is a correlated, moderately heavy-electron compound within the uranium dipnictide (UX 2) series. It is antiferromagnetic with a relatively high transition temperature T N = 204K and a large U-U separation. While the uranium atoms in the lighter dipnictides are considered to be localized, those of USb 2 exhibit hybridization and itineracy, promoting uncertainty as to the continuity of the magnetic order within the UX 2. We have explored the evolution of the magnetic order by employing magnetotransport measurements as a function of pressure and temperature. We find that the T N in USb 2 ismore » enhanced, moving towards that of its smaller sibling UAs 2. But, long before reaching a T N as high as UAs 2, the antiferromagnetism of USb 2 is abruptly destroyed in favor of another magnetic ground state. We identify this pressure-induced ground state as being ferromagnetic based on the appearance of a strong anomalous Hall effect in the transverse resistance in magnetic field. At last with pressure, this emergent ferromagnetic state is suppressed and ultimately destroyed in favor of a non-Fermi-liquid ground state.« less

Emergent ferromagnetism and T -linear scattering in USb 2 at high pressure [Emergent ferromagnetism in USb 2 under pressure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeffries, Jason R.; Stillwell, Ryan L.; Weir, Samuel T.

The material USb 2 is a correlated, moderately heavy-electron compound within the uranium dipnictide (UX 2) series. It is antiferromagnetic with a relatively high transition temperature T N = 204K and a large U-U separation. While the uranium atoms in the lighter dipnictides are considered to be localized, those of USb 2 exhibit hybridization and itineracy, promoting uncertainty as to the continuity of the magnetic order within the UX 2. We have explored the evolution of the magnetic order by employing magnetotransport measurements as a function of pressure and temperature. We find that the T N in USb 2 ismore » enhanced, moving towards that of its smaller sibling UAs 2. But, long before reaching a T N as high as UAs 2, the antiferromagnetism of USb 2 is abruptly destroyed in favor of another magnetic ground state. We identify this pressure-induced ground state as being ferromagnetic based on the appearance of a strong anomalous Hall effect in the transverse resistance in magnetic field. At last with pressure, this emergent ferromagnetic state is suppressed and ultimately destroyed in favor of a non-Fermi-liquid ground state.« less

Temperature dependent current transport of Pd/ZnO nanowire Schottky diodes

NASA Astrophysics Data System (ADS)

Gayen, R. N.; Bhattacharyya, S. R.; Jana, P.

2014-09-01

Zinc oxide (ZnO) nanowire based Schottky barrier diodes are fabricated by depositing Pd metal contact on top of vertically well-aligned ZnO nanowire arrays. A vertical array of ZnO nanowires on indium tin oxide (ITO) coated glass substrates is synthesized by hybrid wet chemical route. Scanning electron microscopy (SEM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) measurement confirm the formation of stoichiometric well-aligned hexagonal (h-ZnO) nanowire arrays with wurtzite structure. Temperature dependent current-voltage (I-V) measurements on palladium-ZnO (Pd/ZnO) nanowire Schottky junctions in the temperature range 303-383 K exhibit excellent rectifying character. From these nonlinear I-V plots, different electrical parameters of diode-like reverse saturation current, barrier height and ideality factor are determined as a function of temperature assuming pure thermionic emission model. The ideality factor is found to decrease while the barrier height increases with the increase in temperature. The series resistance values calculated from Cheung’s functions also show temperature dependency. Such behavior can be attributed to the presence of defects that traps carriers, and barrier height inhomogeneity at the interface of the barrier junction. After barrier height inhomogeneity correction, considering a Gaussian distributed barrier height fluctuation across the Pd/ZnO interface, the estimated values of mean barrier height and modified Richardson constant are more closely matched to the theoretically predicted value for Pd/ZnO Schottky barrier diodes. The variation of density of interface states as a function of interface state energy is also calculated.

Induced Ferromagnetism at BiFeO 3/YBa 2Cu 3O 7 Interfaces

DOE PAGES

Zhu, Jian-Xin; Wen, Xiao-Dong; Haraldsen, J. T.; ...

2014-06-20

We report that transition metal oxides (TMOs) exhibit many emergent phenomena ranging from high-temperature superconductivity and giant magnetoresistance to magnetism and ferroelectricity. In addition, when TMOs are interfaced with each other, new functionalities can arise, which are absent in individual components. Here, we report results from first-principles calculations on the magnetism at the BiFeO 3/YBa 2Cu 3O 7 interfaces. By comparing the total energy for various magnetic spin configurations inside BiFeO 3, we are able to show that a metallic ferromagnetism is induced near the interface. We further develop an interface exchange-coupling model and place the extracted exchange coupling interactionmore » strengths, from the first-principles calculations, into a resultant generic phase diagram. Our conclusion of interfacial ferromagnetism is confirmed by the presence of a hysteresis loop in field-dependent magnetization data. Lastly, the emergence of interfacial ferromagnetism should have implications to electronic and transport properties.« less

Cleaved-coupled nanowire lasers

PubMed Central

Gao, Hanwei; Fu, Anthony; Andrews, Sean C.; Yang, Peidong

2013-01-01

The miniaturization of optoelectronic devices is essential for the continued success of photonic technologies. Nanowires have been identified as potential building blocks that mimic conventional photonic components such as interconnects, waveguides, and optical cavities at the nanoscale. Semiconductor nanowires with high optical gain offer promising solutions for lasers with small footprints and low power consumption. Although much effort has been directed toward controlling their size, shape, and composition, most nanowire lasers currently suffer from emitting at multiple frequencies simultaneously, arising from the longitudinal modes native to simple Fabry–Pérot cavities. Cleaved-coupled cavities, two Fabry–Pérot cavities that are axially coupled through an air gap, are a promising architecture to produce single-frequency emission. The miniaturization of this concept, however, imposes a restriction on the dimensions of the intercavity gaps because severe optical losses are incurred when the cross-sectional dimensions of cavities become comparable to the lasing wavelength. Here we theoretically investigate and experimentally demonstrate spectral manipulation of lasing modes by creating cleaved-coupled cavities in gallium nitride (GaN) nanowires. Lasing operation at a single UV wavelength at room temperature was achieved using nanoscale gaps to create the smallest cleaved-coupled cavities to date. Besides the reduced number of lasing modes, the cleaved-coupled nanowires also operate with a lower threshold gain than that of the individual component nanowires. Good agreement was found between the measured lasing spectra and the predicted spectral modes obtained by simulating optical coupling properties. This agreement between theory and experiment presents design principles to rationally control the lasing modes in cleaved-coupled nanowire lasers. PMID:23284173

Top-Down Nanofabrication and Characterization of 20 nm Silicon Nanowires for Biosensing Applications

PubMed Central

M. N, M. Nuzaihan; Hashim, U.; Md Arshad, M. K.; Ruslinda, A. Rahim; Rahman, S. F. A.; Fathil, M. F. M.; Ismail, Mohd. H.

2016-01-01

A top-down nanofabrication approach is used to develop silicon nanowires from silicon-on-insulator (SOI) wafers and involves direct-write electron beam lithography (EBL), inductively coupled plasma-reactive ion etching (ICP-RIE) and a size reduction process. To achieve nanometer scale size, the crucial factors contributing to the EBL and size reduction processes are highlighted. The resulting silicon nanowires, which are 20 nm in width and 30 nm in height (with a triangular shape) and have a straight structure over the length of 400 μm, are fabricated precisely at the designed location on the device. The device is applied in biomolecule detection based on the changes in drain current (Ids), electrical resistance and conductance of the silicon nanowires upon hybridization to complementary target deoxyribonucleic acid (DNA). In this context, the scaled-down device exhibited superior performances in terms of good specificity and high sensitivity, with a limit of detection (LOD) of 10 fM, enables for efficient label-free, direct and higher-accuracy DNA molecules detection. Thus, this silicon nanowire can be used as an improved transducer and serves as novel biosensor for future biomedical diagnostic applications. PMID:27022732

Coupled, Simultaneous Displacement and Dealloying Reactions into Fe-Ni-Co Nanowires for Thinning Nanowire Segments.

PubMed

Geng, Xiaohua; Podlaha, Elizabeth J

2016-12-14

A new methodology is reported to shape template-assisted electrodeposition of Fe-rich, Fe-Ni-Co nanowires to have a thin nanowire segment using a coupled displacement reaction with a more noble elemental ion, Cu(II), and at the same time dealloying predominantly Fe from Fe-Ni-Co by the reduction of protons (H + ), followed by a subsequent etching step. The displacement/dealloyed layer was sandwiched between two trilayers of Fe-Ni-Co to facilitate the characterization of the reaction front, or penetration length. The penetration length region was found to be a function of the ratio of proton and Cu(II) concentration, and a ratio of 0.5 was found to provide the largest penetration rate, and hence the larger thinned length of the nanowire. Altering the etching time affected the diameter of the thinned region. This methodology presents a new way to thin nanowire segments connected to larger nanowire sections and also introduces a way to study the propagation of a reaction front into a nanowire.

Autoclave growth, magnetic, and optical properties of GdB6 nanowires

NASA Astrophysics Data System (ADS)

Han, Wei; Wang, Zhen; Li, Qidong; Liu, Huatao; Fan, Qinghua; Dong, Youzhong; Kuang, Quan; Zhao, Yanming

2017-12-01

High-quality single crystalline gadolinium hexaboride (GdB6) nanowires have been successfully prepared at very low temperatures of 200-240 °C by a high pressure solid state (HPSS) method in an autoclave with a new chemical reaction route, where Gd, H3BO3, Mg and I2 were used as raw materials. The crystal structure, morphology, valence, magnetic and optical absorption properties were investigated using XRD, FESEM, HRTEM, XPS, SQUID magnetometry and optical measurements. HRTEM images and SAED patterns reveal that the GdB6 nanowires are single crystalline with a preferred growth direction along [001]. The XPS spectrum suggests that the valence of Gd ion in GdB6 is trivalent. The effective magnetic momentum per Gd3+ in GdB6 is about 6.26 μB. The optical properties exhibit weak absorption in the visible light range, but relatively strong absorbance in the NIR and UV range. Low work function and high NIR absorption can make GdB6 nanowires a potential solar radiation shielding material for solar cells or other NIR blocking applications.

Photo-assisted hysteresis of electronic transport for ZnO nanowire transistors

NASA Astrophysics Data System (ADS)

Du, Qianqian; Ye, Jiandong; Xu, Zhonghua; Zhu, Shunming; Tang, Kun; Gu, Shulin; Zheng, Youdou

2018-03-01

Recently, ZnO nanowire field effect transistors (FETs) have received renewed interest due to their extraordinary low dimensionality and high sensitivity to external chemical environments and illumination conditions. These prominent properties have promising potential in nanoscale chemical and photo-sensors. In this article, we have fabricated ZnO nanowire FETs and have found hysteresis behavior in their transfer characteristics. The mechanism and dynamics of the hysteresis phenomena have been investigated in detail by varying the sweeping rate and range of the gate bias with and without light irradiation. Significantly, light irradiation is of great importance on charge trapping by regulating adsorption and desorption of oxygen at the interface of ZnO/SiO2. Carriers excited by light irradiation can dramatically promote trapping/detrapping processes. With the assistance of light illumination, we have demonstrated a photon-assisted nonvolatile memory which employs the ZnO nanowire FET. The device exhibits reliable programming/erasing operations and a large on/off ratio. The proposed proto-type memory has thus provided a possible novel path for creating a memory functionality to other low-dimensional material systems.

Nanowire sensors and arrays for chemical/biomolecule detection

NASA Technical Reports Server (NTRS)

Yun, Minhee; Lee, Choonsup; Vasquez, Richard P.; Ramanathan, K.; Bangar, M. A.; Chen, W.; Mulchandan, A.; Myung, N. V.

2005-01-01

We report electrochemical growth of single nanowire based sensors using e-beam patterned electrolyte channels, potentially enabling the controlled fabrication of individually addressable high density arrays. The electrodeposition technique results in nanowires with controlled dimensions, positions, alignments, and chemical compositions. Using this technique, we have fabricated single palladium nanowires with diameters ranging between 75 nm and 300 nm and conducting polymer nanowires (polypyrrole and polyaniline) with diameters between 100 nm and 200 nm. Using these single nanowires, we have successfully demonstrated gas sensing with Pd nanowires and pH sensing with polypirrole nanowires.

Improving emission uniformity and linearizing band dispersion in nanowire arrays using quasi-aperiodicity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, P. Duke; Koleske, Daniel D.; Povinelli, Michelle L.

For this study, we experimentally investigate a new class of quasi-aperiodic structures for improving the emission pattern in nanowire arrays. Efficient normal emission, as well as lasing, can be obtained from III-nitride photonic crystal (PhC) nanowire arrays that utilize slow group velocity modes near the Γ-point in reciprocal space. However, due to symmetry considerations, the emitted far-field pattern of such modes are often ‘donut’-like. Many applications, including lighting for displays or lasers, require a more uniform beam profile in the far-field. Previous work has improved far-field beam uniformity of uncoupled modes by changing the shape of the emitting structure. However,more » in nanowire systems, the shape of nanowires cannot always be arbitrarily changed due to growth or etch considerations. Here, we investigate breaking symmetry by instead changing the position of emitters. Using a quasi-aperiodic geometry, which changes the emitter position within a photonic crystal supercell (2x2), we are able to linearize the photonic bandstructure near the Γ-point and greatly improve emitted far-field uniformity. We realize the III-nitride nanowires structures using a top-down fabrication procedure that produces nanowires with smooth, vertical sidewalls. Comparison of room-temperature micro-photoluminescence (µ-PL) measurements between periodic and quasi-aperiodic nanowire arrays reveal resonances in each structure, with the simple periodic structure producing a donut beam in the emitted far-field and the quasi-aperiodic structure producing a uniform Gaussian-like beam. We investigate the input pump power vs. output intensity in both systems and observe the simple periodic array exhibiting a non-linear relationship, indicative of lasing. We believe that the quasi-aperiodic approach studied here provides an alternate and promising strategy for shaping the emission pattern of nanoemitter systems.« less

Modal analysis of the thermal conductivity of nanowires: examining unique thermal transport features

NASA Astrophysics Data System (ADS)

Samaraweera, Nalaka; Larkin, Jason M.; Chan, Kin L.; Mithraratne, Kumar

2018-06-01

In this study, unique thermal transport features of nanowires over bulk materials are investigated using a combined analysis based on lattice dynamics and equilibrium molecular dynamics (EMD). The evaluation of the thermal conductivity (TC) of Lenard–Jones nanowires becomes feasible due to the multi-step normal mode decomposition (NMD) procedure implemented in the study. A convergence issue of the TC of nanowires is addressed by the NMD implementation for two case studies, which employ pristine nanowires (PNW) and superlattice nanowires. Interestingly, mode relaxation times at low frequencies of acoustic branches exhibit signs of approaching constant values, thus indicating the convergence of TC. The TC evaluation procedure is further verified by implementing EMD-based Green–Kubo analysis, which is based on a fundamentally different physical perspective. Having verified the NMD procedure, the non-monotonic trend of the TC of nanowires is addressed. It is shown that the principal cause for the observed trend is due to the competing effects of long wavelength phonons and phonon–surface scatterings as the nanowire’s cross-sectional width is changed. A computational procedure is developed to decompose the different modal contribution to the TC of shell alloy nanowires (SANWs) using virtual crystal NMD and the Allen–Feldman theory. Several important conclusions can be drawn from the results. A propagons to non-propagons boundary appeared, resulting in a cut-off frequency (ω cut); moreover, as alloy atomic mass is increased, ω cut shifts to lower frequencies. The existence of non-propagons partly causes the low TC of SANWs. It can be seen that modes with low frequencies demonstrate a similar behavior to corresponding modes of PNWs. Moreover, lower group velocities associated with higher alloy atomic mass resulted in a lower TC of SANWs.

Photoluminescence of etched SiC nanowires

NASA Astrophysics Data System (ADS)

Stewart, Polite D., Jr.; Rich, Ryan; Zerda, T. W.

2010-10-01

SiC nanowires were produced from carbon nanotubes and nanosize silicon powder in a tube furnace at temperatures between 1100^oC and 1350^oC. SiC nanowires had average diameter of 30 nm and very narrow size distribution. The compound possesses a high melting point, high thermal conductivity, and excellent wear resistance. The surface of the SiC nanowires after formation is covered by an amorphous layer. The composition of that layer is not fully understood, but it is believed that in addition to amorphous SiC it contains various carbon and silicon compounds, and SiO2. The objective of the research was to modify the surface structure of these SiC nanowires. Modification of the surface was done using the wet etching method. The etched nanowires were then analyzed using Fourier Transform Infrared spectroscopy (FTIR), transmission electron microscopy (TEM), and photoluminescence (PL). FTIR and TEM analysis provided valid proof that the SiC nanowires were successfully etched. Also, the PL results showed that the SiC nanowire core did possess a fluorescent signal.

A novel ethanol gas sensor-ZnS/ cyclohexylamine hybrid nanowires.

PubMed

Xu, Lin; Song, Hongwei; Zhang, Tong; Fan, Huitao; Fan, Libo; Wang, Yu; Dong, Biao; Bai, Xue

2011-03-01

We fabricated a novel ethanol gas sensor based on organic-inorganic ZnS/cyclohexylamine (CHA) nanowires via a solvothermal route. The sensor exhibited significantly better performance with response time of approximately 0.6 s and recovery time of approximately 10 s even under a low ethanol concentration and the high surface area, small nanofiber diameter, and hybrid nature made the ZnS/CHA nanowire gas sensor have high sensitivity to ethanol gas at a lower operating current of 160 mA. Moreover, the gas sensing mechanism was proposed on the basis of the two simultaneous steps to explain the adsorbing process due to the hybrid nature. This work indicates that the ZnS/CHA hybrid can be a novel candidate for the ethanol gas sensor with high performance.

Metallic nanowire networks

DOEpatents

Song, Yujiang; Shelnutt, John A.

2012-11-06

A metallic nanowire network synthesized using chemical reduction of a metal ion source by a reducing agent in the presence of a soft template comprising a tubular inverse micellar network. The network of interconnected polycrystalline nanowires has a very high surface-area/volume ratio, which makes it highly suitable for use in catalytic applications.

NANOWIRE CATHODE MATERIAL FOR LITHIUM-ION BATTERIES

DOE Office of Scientific and Technical Information (OSTI.GOV)

John Olson, PhD

2004-07-21

This project involved the synthesis of nanowire ã-MnO2 and characterization as cathode material for high-power lithium-ion batteries for EV and HEV applications. The nanowire synthesis involved the edge site decoration nanowire synthesis developed by Dr. Reginald Penner at UC Irvine (a key collaborator in this project). Figure 1 is an SEM image showing ã-MnO2 nanowires electrodeposited on highly oriented pyrolytic graphite (HOPG) electrodes. This technique is unique to other nanowire template synthesis techniques in that it produces long (>500 um) nanowires which could reduce or eliminate the need for conductive additives due to intertwining of fibers. Nanowire cathode for lithium-ionmore » batteries with surface areas 100 times greater than conventional materials can enable higher power batteries for electric vehicles (EVs) and hybrid electric vehicles (HEVs). The synthesis of the ã-MnO2 nanowires was successfully achieved. However, it was not found possible to co-intercalate lithium directly in the nanowire synthesis. Based on input from proposal reviewers, the scope of the project was altered to attempt the conversion into spinel LiMn2O4 nanowire cathode material by solid state reaction of the ã-MnO2 nanowires with LiNO3 at elevated temperatures. Attempts to perform the conversion on the graphite template were unsuccessful due to degradation of the graphite apparently caused by oxidative attack by LiNO3. Emphasis then shifted to quantitative removal of the nanowires from the graphite, followed by the solid state reaction. Attempts to quantitatively remove the nanowires by several techniques were unsatisfactory due to co-removal of excess graphite or poor harvesting of nanowires. Intercalation of lithium into ã-MnO2 electrodeposited onto graphite was demonstrated, showing a partial demonstration of the ã-MnO2 material as a lithium-ion battery cathode material. Assuming the issues of nanowires removal can be solved, the technique does offer potential for

Ferromagnetism in LaCo O3

NASA Astrophysics Data System (ADS)

Yan, J.-Q.; Zhou, J.-S.; Goodenough, J. B.

2004-07-01

A systematic investigation of the low-temperature magnetic properties of LaCoO3 has demonstrated a ferromagnetism with Tc≈85K from surface cobalt atoms. The experimental investigation involved comparison of the magnetic susceptibility of (1) a single crystal, (2) a powder ground from the same crystal, and (3) a cold-pressed pellet from the ground powder that was unannealed and annealed at 400°C followed by a later anneal at 1000°C . The low-temperature magnetic susceptibility was found to have three contributions: a Curie-Weiss paramagnetism, a thermally driven spin-state transition, and a surface-related ferromagnetism with Tc≈85K . The ferromagnetic component has a remanence and coercivity at 5K that increases dramatically with increasing surface/volume ratio of the different samples. The presence of the surface ferromagnetism explains the discrepancies of the low-temperature magnetic susceptibility reported by different groups. An anion coordination at surface Co(III) ions that differs from that of the bulk cobalt is shown to be capable of stabilizing higher spin states. A Tc≈85K is argued to be too low for ferromagnetic coupling by oxidized clusters, and possible mechanisms for a ferromagnetic coupling between higher-spin Co(III) ions are discussed.

Interactions between semiconductor nanowires and living cells.

PubMed

Prinz, Christelle N

2015-06-17

Semiconductor nanowires are increasingly used for biological applications and their small dimensions make them a promising tool for sensing and manipulating cells with minimal perturbation. In order to interface cells with nanowires in a controlled fashion, it is essential to understand the interactions between nanowires and living cells. The present paper reviews current progress in the understanding of these interactions, with knowledge gathered from studies where living cells were interfaced with vertical nanowire arrays. The effect of nanowires on cells is reported in terms of viability, cell-nanowire interface morphology, cell behavior, changes in gene expression as well as cellular stress markers. Unexplored issues and unanswered questions are discussed.

High Aspect Ratio Perforated Co₃O₄ Nanowires Derived from Cobalt-Carbonate-Hydroxide Nanowires with Enhanced Sensing Performance.

PubMed

Zhou, Tuantuan; Gao, Wanlin; Wang, Qiang; Umar, Ahmad

2018-05-01

Herein, we report the facile synthesis of high-aspect ratio perforated Co3O4 nanowires derived from cobalt-carbonate-hydroxide (Co(CO3)0.5(OH) 0.11H2O) nanowires. The Co(CO3)0.5(OH) 0.11H2O nanowires were synthesized by simple hydrothermal process at 120 °C while annealing of such nanowires at 400 °C leads the formation of perforated Co3O4 nanowires. The prepared nanowires were characterized by several techniques which confirmed the high aspect ratio and well-crystallinity for the synthesized nanowires. For application point of view, the prepared perforated Co3O4 nanowires were used as efficient electrode material to fabricate highly sensitive and selective hydrazine chemical sensor. The electrochemical impedance spectroscopy (EIS) technique was employed to confirm the successful modification of the electrode. The key parameters of chemical sensor, such as detection limit, sensitivity, and linear range, have been systematically explored. The fabricated hydrazine sensor displayed a rather low detection limit of 4.52 μM (S/N = 3), a good sensitivity of 25.70 μA · mM-1, and a wide linear range of 16.97-358.34 μM.

Doping-induced spin-orbit splitting in Bi-doped ZnO nanowires

NASA Astrophysics Data System (ADS)

Aras, Mehmet; Güler-Kılıç, Sümeyra; Kılıç, ćetin

2017-04-01

Our predictions, based on density-functional calculations, reveal that surface doping of ZnO nanowires with Bi leads to a linear-in-k splitting of the conduction-band states, through spin-orbit interaction, due to the lowering of the symmetry in the presence of the dopant. This finding implies that spin polarization of the conduction electrons in Bi-doped ZnO nanowires could be controlled with applied electric (as opposed to magnetic) fields, making them candidate materials for spin-orbitronic applications. Our findings also show that the degree of spin splitting could be tuned by adjusting the dopant concentration. Defect calculations and ab initio molecular dynamics simulations indicate that stable doping configurations exhibiting the foregoing linear-in-k splitting could be realized under reasonable thermodynamic conditions.

Nanowire array and nanowire solar cells and methods for forming the same

DOEpatents

Yang, Peidong [Berkeley, CA; Greene, Lori [Berkeley, CA; Law, Matthew [Berkeley, CA

2007-09-04

Homogeneous and dense arrays of nanowires are described. The nanowires can be formed in solution and can have average diameters of 40-300 nm and lengths of 1-3 .mu.m. They can be formed on any suitable substrate. Photovoltaic devices are also described.

Nanowire array and nanowire solar cells and methods for forming the same

DOEpatents

Yang, Peidong; Greene, Lori E.; Law, Matthew

2009-06-09

Homogeneous and dense arrays of nanowires are described. The nanowires can be formed in solution and can have average diameters of 40-300 nm and lengths of 1-3 .mu.m. They can be formed on any suitable substrate. Photovoltaic devices are also described.

Suspended tungsten-based nanowires with enhanced mechanical properties grown by focused ion beam induced deposition

NASA Astrophysics Data System (ADS)

Córdoba, Rosa; Lorenzoni, Matteo; Pablo-Navarro, Javier; Magén, César; Pérez-Murano, Francesc; María De Teresa, José

2017-11-01

The implementation of three-dimensional (3D) nano-objects as building blocks for the next generation of electro-mechanical, memory and sensing nano-devices is at the forefront of technology. The direct writing of functional 3D nanostructures is made feasible by using a method based on focused ion beam induced deposition (FIBID). We use this technique to grow horizontally suspended tungsten nanowires and then study their nano-mechanical properties by three-point bending method with atomic force microscopy. These measurements reveal that these nanowires exhibit a yield strength up to 12 times higher than that of the bulk tungsten, and near the theoretical value of 0.1 times the Young’s modulus (E). We find a size dependence of E that is adequately described by a core-shell model, which has been confirmed by transmission electron microscopy and compositional analysis at the nanoscale. Additionally, we show that experimental resonance frequencies of suspended nanowires (in the MHz range) are in good agreement with theoretical values. These extraordinary mechanical properties are key to designing electro-mechanically robust nanodevices based on FIBID tungsten nanowires.

Current-driven second-harmonic domain wall resonance in ferromagnetic metal/nonmagnetic metal bilayers: A field-free method for spin Hall angle measurements

NASA Astrophysics Data System (ADS)

Hajiali, M. R.; Hamdi, M.; Roozmeh, S. E.; Mohseni, S. M.

2017-10-01

We study the ac current-driven domain wall motion in bilayer ferromagnetic metal (FM)/nonmagnetic metal (NM) nanowires. The solution of the modified Landau-Lifshitz-Gilbert equation including all the spin transfer torques is used to describe motion of the domain wall in the presence of the spin Hall effect. We show that the domain wall center has a second-harmonic frequency response in addition to the known first-harmonic excitation. In contrast to the experimentally observed second-harmonic response in harmonic Hall measurements of spin-orbit torque in magnetic thin films, this second-harmonic response directly originates from spin-orbit torque driven domain wall dynamics. Based on the spin current generated by domain wall dynamics, the longitudinal spin motive force generated voltage across the length of the nanowire is determined. The second-harmonic response introduces additionally a practical field-free and all-electrical method to probe the effective spin Hall angle for FM/NM bilayer structures that could be applied in experiments. Our results also demonstrate the capability of utilizing FM/NM bilayer structures in domain wall based spin-torque signal generators and resonators.