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Sample records for napyivyizolyuyuchomu 6h sic

  1. Atomic probe microscopy of 3C SiC films grown on 6H SiC substrates

    NASA Technical Reports Server (NTRS)

    Steckl, A. J.; Roth, M. D.; Powell, J. A.; Larkin, D. J.

    1993-01-01

    The surface of 3C SiC films grown on 6H SiC substrates has been studied by atomic probe microscopy in air. Atomic-scale images of the 3C SiC surface have been obtained by STM which confirm the 111 line type orientation of the cubic 3C layer grown on the 0001 plane type surface of the hexagonal 6H substrate. The nearest-neighbor atomic spacing for the 3C layer has been measured to be 3.29 +/- 0.2 A, which is within 7 percent of the bulk value. Shallow terraces in the 3C layer have been observed by STM to separate regions of very smooth growth in the vicinity of the 3C nucleation point from considerably rougher 3C surface regions. These terraces are oriented at right angles to the growth direction. Atomic force microscopy has been used to study etch pits present on the 6H substrate due to high temperature HCl cleaning prior to CVD growth of the 3C layer. The etch pits have hexagonal symmetry and vary in depth from 50 nm to 1 micron.

  2. Dimensional isotropy of 6H and 3C SiC under neutron irradiation

    DOE PAGES

    Snead, Lance L.; Katoh, Yutai; Koyanagi, Takaaki; ...

    2016-01-16

    This investigation experimentally determines the as-irradiated crystal axes dimensional change of the common polytypes of SiC considered for nuclear application. Single crystal α-SiC (6H), β-SiC (3C), CVD β-SiC, and single crystal Si have been neutron irradiated near 60 °C from 2 × 1023 to 2 × 1026 n/m2 (E > 0.1 MeV), or about 0.02–20 dpa, in order to study the effect of irradiation on bulk swelling and strain along independent crystalline axes. Single crystal, powder diffractometry and density measurement have been carried out. For all neutron doses where the samples remained crystalline all SiC materials demonstrated equivalent swelling behavior.more » Moreover the 6H–SiC expanded isotropically. The magnitude of the swelling followed a ~0.77 power law against dose consistent with a microstructure evolution driven by single interstitial (carbon) mobility. Extraordinarily large ~7.8% volume expansion in SiC was observed prior to amorphization. Above ~0.9 × 1025 n/m2 (E > 0.1 MeV) all SiC materials became amorphous with an identical swelling: a 11.7% volume expansion, lowering the density to 2.84 g/cm3. As a result, the as-amorphized density was the same at the 2 × 1025 and 2 × 1026 n/m2 (E > 0.1 MeV) dose levels.« less

  3. Dimensional isotropy of 6H and 3C SiC under neutron irradiation

    SciTech Connect

    Snead, Lance L.; Katoh, Yutai; Koyanagi, Takaaki; Terrani, Kurt A.; Specht, Eliot D.

    2016-01-16

    This investigation experimentally determines the as-irradiated crystal axes dimensional change of the common polytypes of SiC considered for nuclear application. Single crystal α-SiC (6H), β-SiC (3C), CVD β-SiC, and single crystal Si have been neutron irradiated near 60 °C from 2 × 1023 to 2 × 1026 n/m2 (E > 0.1 MeV), or about 0.02–20 dpa, in order to study the effect of irradiation on bulk swelling and strain along independent crystalline axes. Single crystal, powder diffractometry and density measurement have been carried out. For all neutron doses where the samples remained crystalline all SiC materials demonstrated equivalent swelling behavior. Moreover the 6H–SiC expanded isotropically. The magnitude of the swelling followed a ~0.77 power law against dose consistent with a microstructure evolution driven by single interstitial (carbon) mobility. Extraordinarily large ~7.8% volume expansion in SiC was observed prior to amorphization. Above ~0.9 × 1025 n/m2 (E > 0.1 MeV) all SiC materials became amorphous with an identical swelling: a 11.7% volume expansion, lowering the density to 2.84 g/cm3. As a result, the as-amorphized density was the same at the 2 × 1025 and 2 × 1026 n/m2 (E > 0.1 MeV) dose levels.

  4. Nitrogen-related point defect in 4H and 6H SiC

    NASA Astrophysics Data System (ADS)

    Zvanut, M. E.; van Tol, J.

    2007-12-01

    A nitrogen-related pair defect is studied as a function of doping density in 4H and 6H SiC. Electron paramagnetic resonance measurements verify that one nucleus in the pair is nitrogen, but the second part of the pair remains uncertain. The pair concentration varies monotonically with nitrogen concentration in samples with doping density 10 18-10 16 cm -3 and the boron concentration is an order of magnitude less than that of nitrogen. The pair center is not observed in the dark or under ultraviolet illumination when the nitrogen and boron concentrations are similar. We conclude that the pair is generated in all nitrogen-doped samples, but like the isolated nitrogen impurity, may be compensated by boron.

  5. Charge neutrality in epitaxial graphene on 6 H -SiC(0001) via nitrogen intercalation

    NASA Astrophysics Data System (ADS)

    Caffrey, Nuala M.; Armiento, Rickard; Yakimova, Rositsa; Abrikosov, Igor A.

    2015-08-01

    The electronic properties of epitaxial graphene grown on SiC(0001) are known to be impaired relative to those of freestanding graphene. This is due to the formation of a carbon buffer layer between the graphene layers and the substrate, which causes the graphene layers to become strongly n -doped. Charge neutrality can be achieved by completely passivating the dangling bonds of the clean SiC surface using atomic intercalation. So far, only one element, hydrogen, has been identified as a promising candidate. We show, using first-principles density functional calculations, how it can also be accomplished via the growth of a thin layer of silicon nitride on the SiC surface. The subsequently grown graphene layers display the electronic properties associated with charge neutral graphene. We show that the surface energy of this structure is considerably lower than that of others with intercalated atomic nitrogen and determine how its stability depends on the N2 chemical potential.

  6. N-V{sub Si}-related center in non-irradiated 6H SiC nanostructure

    SciTech Connect

    Bagraev, Nikolay; Danilovskii, Eduard; Gets, Dmitrii; Klyachkin, Leonid; Malyarenko, Anna; Kalabukhova, Ekaterina; Shanina, Bella; Savchenko, Dariya

    2014-02-21

    We present the first findings of the vacancy-related centers identified by the electron spin resonance (ESR) and electrically-detected (ED) ESR method in the non-irradiated 6H-SiC nanostructure. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the δ-barriers heavily doped with boron on the surface of the n-type 6H-SiC (0001) wafer. The EDESR method by measuring the only magnetoresistance of the 6H SiC nanostructure under the high frequency generation from the δ-barriers appears to allow the identification of the silicon vacancy centers as well as the triplet center with spin state S=1. The same triplet center that is characterized by the larger value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (hf) lines in the ESR and EDESR spectra originating from the hf interaction with the {sup 14}N nucleus allow us to attribute this triplet center to the N-V{sub Si} defect.

  7. Measurement of N-Type 6H SiC Minority-Carrier Diffusion Lengths by Electron Bombardment of Schottky Barriers

    NASA Technical Reports Server (NTRS)

    Hubbard, S. M.; Tabib-Azar, M.; Balley, S.; Rybickid, G.; Neudeck, P.; Raffaelle, R.

    2004-01-01

    Minority-Carrier diffusion lengths of n-type 6H-SiC were measured using the electron-beam induced current (EBIC) technique. Experimental values of primary beam current, EBIC, and beam voltage were obtained for a variety of SIC samples. This data was used to calculate experimental diode efficiency vs. beam voltage curves. These curves were fit to theoretically calculated efficiency curves, and the diffusion length and metal layer thickness were extracted. The hole diffusion length in n-6H SiC ranged from 0.93 +/- 0.15 microns.

  8. Effect of Crystal Defects on Minority Carrier Diffusion Length in 6H SiC Measured Using the Electron Beam Induced Current Method

    NASA Technical Reports Server (NTRS)

    Tabib-Azar, Massood

    1997-01-01

    We report values of minority carrier diffusion length in n-type 6H SiC measured using a planar Electron Beam Induced Current (EBIC) method. Values of hole diffusion length in defect free regions of n-type 6H SiC, with a doping concentration of 1.7El7 1/cu cm, ranged from 1.46 microns to 0.68 microns. We next introduce a novel variation of the planar method used above. This 'planar mapping' technique measured diffusion length along a linescan creating a map of diffusion length versus position. This map is then overlaid onto the EBIC image of the corresponding linescan, allowing direct visualization of the effect of defects on minority carrier diffusion length. Measurements of the above n-type 6H SiC resulted in values of hole diffusion length ranging from 1.2 micron in defect free regions to below 0.1 gm at the center of large defects. In addition, measurements on p-type 6H SiC resulted in electron diffusion lengths ranging from 1.42 micron to 0.8 micron.

  9. Theoretical and electron paramagnetic resonance studies of hyperfine interaction in nitrogen doped 4H and 6H SiC

    SciTech Connect

    Szász, K.; Gali, A.

    2014-02-21

    Motivated by recent experimental findings on the hyperfine signal of nitrogen donor (N{sub C}) in 4 H and 6 H SiC, we calculate the hyperfine tensors within the framework of density functional theory. We find that there is negligible hyperfine coupling with {sup 29}Si isotopes when N{sub C} resides at h site both in 4 H and 6 H SiC. We observe measurable hyperfine coupling to a single {sup 29}Si at k site in 4 H SiC and k{sub 1} site in 6 H SiC. Our calculations unravel that such {sup 29}Si hyperfine coupling does not occur at k{sub 2} site in 6 H SiC. Our findings are well corroborated by our new electron paramagnetic resonance studies in nitrogen doped 6 H SiC.

  10. Oxidation-Induced Deep Levels in n - and p -Type 4 H - and 6 H -SiC and Their Influence on Carrier Lifetime

    NASA Astrophysics Data System (ADS)

    Booker, I. D.; Abdalla, H.; Hassan, J.; Karhu, R.; Lilja, L.; Janzén, E.; Sveinbjörnsson, E. Ö.

    2016-07-01

    We present a complete analysis of the electron- and hole-capture and -emission processes of the deep levels ON1, ON2a, and ON2b in 4 H -SiC and their 6 H -SiC counterparts OS1a and OS1b through OS3a and OS3b, which are produced by lifetime enhancement oxidation or implantation and annealing techniques. The modeling is based on a simultaneous numerical fitting of multiple high-resolution capacitance deep-level transient spectroscopy spectra measured with different filling-pulse lengths in n - and p -type material. All defects are found to be double-donor-type positive-U two-level defects with very small hole-capture cross sections, making them recombination centers of low efficiency, in accordance with minority-carrier-lifetime measurements. Their behavior as trapping and weak recombination centers, their large concentrations resulting from the lifetime enhancement oxidations, and their high thermal stability, however, make it advisable to minimize their presence in active regions of devices, for example, the base layer of bipolar junction transistors.

  11. DEFECT SELECTIVE ETCHING OF THICK ALN LAYERS GROWN ON 6H-SIC SEEDS - A TRANSMISSION ELECTRON MICROSCOPY STUDY

    SciTech Connect

    Nyakiti, Luke; Chaudhari, Jharna; Kenik, Edward A; Lu, Peng; Edgar, J H

    2008-01-01

    In the present study, the type and densities of defects in AlN crystals grown on 6H-SiC seeds by the sublimation-recombination method were assessed. The positions of the defects in AlN were first identified by defect selective etching (DSE) in molten NaOH-KOH at 400 C for 2 minutes. Etching produced pits of three different sizes: 1.77 m, 2.35 m , and 2.86 m. The etch pits were either aligned together forming a sub-grain boundary or randomly distributed. The smaller etch pits were either isolated or associated with larger etch pits. After preparing crosssections of the pits by the focused ion beam (FIB) technique, transmission electron microscopy (TEM) was performed to determine which dislocation type (edge, mixed or screw) produced a specific etch pit sizes. Preliminary TEM bright field and dark field study using different zone axes and diffraction vectors indicates an edge dislocation with a Burgers vector 1/3[1120] is associated with the smallest etch pit size.

  12. Temperature dependent behavior of localized and delocalized electrons in nitrogen-doped 6H SiC crystals as studied by electron spin resonance

    SciTech Connect

    Savchenko, D.; Kalabukhova, E.; Shanina, B.; Kiselov, V.; Cichoň, S.; Honolka, J.; Mokhov, E.

    2016-01-28

    We have studied the temperature behavior of the electron spin resonance (ESR) spectra of nitrogen (N) donors in n-type 6H SiC crystals grown by Lely and sublimation sandwich methods (SSM) with donor concentration of 10{sup 17 }cm{sup −3} at T = 60–150 K. A broad signal in the ESR spectrum was observed at T ≥ 80 K with Lorentzian lineshape and g{sub ||} = 2.0043(3), g{sub ⊥} = 2.0030(3), which was previously assigned in the literature to the N donors in the 1s(E) excited state. Based on the analysis of the ESR lineshape, linewidth and g-tensor we attribute this signal to the conduction electrons (CE). The emergence of the CE ESR signal at T > 80 K was explained by the ionization of electrons from the 1s(A{sub 1}) ground and 1s(E) excited states of N donors to the conduction band while the observed reduction of the hyperfine (hf) splitting for the N{sub k1,k2} donors with the temperature increase is attributed to the motional narrowing effect of the hf splitting. The temperature dependence of CE ESR linewidth is described by an exponential law (Orbach process) with the activation energy corresponding to the energy separation between 1s(A{sub 1}) and 1s(E) energy levels for N residing at quasi-cubic sites (N{sub k1,k2}). The theoretical analysis of the temperature dependence of microwave conductivity measured by the contact-free method shows that due to the different position of the Fermi level in two samples the ionization of free electrons occurs from the energy levels of N{sub k1,k2} donors in Lely grown samples and from the energy level of N{sub h} residing at hexagonal position in 6H SiC grown by SSM.

  13. Thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap semiconductors SiC, GaN, and ZnO

    SciTech Connect

    Huang, Zheng; Lü, Tie-Yu; Wang, Hui-Qiong; Zheng, Jin-Cheng

    2015-09-15

    We have investigated the thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap(n-type) semiconductors SiC, GaN, and ZnO based on first-principles calculations and Boltzmann transport theory. Our results show that the thermoelectric performance increases from 3C to 6H, 4H, and 2H structures with an increase of hexagonality for SiC. However, for GaN and ZnO, their power factors show a very weak dependence on the polytype. Detailed analysis of the thermoelectric properties with respect to temperature and carrier concentration of 4H-SiC, 2H-GaN, and 2H-ZnO shows that the figure of merit of these three compounds increases with temperature, indicating the promising potential applications of these thermoelectric materials at high temperature. The significant difference of the polytype-dependent thermoelectric properties among SiC, GaN, and ZnO might be related to the competition between covalency and ionicity in these semiconductors. Our calculations may provide a new way to enhance the thermoelectric properties of wide-band-gap semiconductors through atomic structure design, especially hexagonality design for SiC.

  14. Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers

    NASA Technical Reports Server (NTRS)

    Powell, J. A.; Larkin, D. J.; Matus, L. G.; Choyke, W. J.; Bradshaw, J. L.

    1990-01-01

    Previously reported growth of SiC films on SiC by chemical vapor deposition (CVD) used alpha-SiC crystal substrates. The CVD growth and evaluation of high quality 6H-SiC films on 6H-SiC wafers cut from large boules grown by the modified-sublimation process is reported. The single-crystal 6H-SiC films were grown on wafers oriented 3 to 4 deg off the (0001) plane toward the 11-20 direction. The films, up to 12 microns thick, had surfaces that were smooth and featureless. The high quality of the films was demonstrated by optical and electron microscopy, and low-temperature photoluminescence.

  15. Fabrication and Characterization of 6H-SiC Switching Devices

    DTIC Science & Technology

    1993-06-01

    ns range at 623 K has been observed in a 6H- SiC pn junction diode[4]. A Pt/6H-SiC Schottky diode has been shown to have 400 V reverse breakdown...6H-SiC Schottky diode switches, and a 75% switching efficiency in p+n 6H-SiC diode switches. A breakdown field of more than 1x106 V /cm is obtained...This could mean a blocking voltage of about 3000 v . A number of successful sic devices has been demonstrated. A high temperature rectifier made

  16. Epitaxial growth of 6H silicon carbide in the temperature range 1320 C to 1390 C

    NASA Technical Reports Server (NTRS)

    Will, H. A.; Powell, J. A.

    1974-01-01

    High-quality epitaxial layers of 6H SiC have been grown on 6H SiC substrates with the grown direction perpendicular to the crystal c-axis. The growth was by chemical vapor deposition from methyltrichlorosilane (CH3SiCl3) in hydrogen at temperatures in the range of 1320 to 1390 C. Epitaxial layers up to 80 microns thick were grown at rates of 0.4 microns/min. Attempts at growth on the (0001) plane of 6H SiC substrates under similar conditions resulted in polycrystalline cubic SiC layers. Optical and X-ray diffraction techniques were used to characterize the grown layers.

  17. Direct observation of porous SiC formed by anodization in HF

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S.; Grimberg, Ilana; Weiss, Ben-Zion; Kurtz, Anthony D.

    1993-01-01

    A process for forming porous SiC from single-crystal SiC wafers has been demonstrated. Porous SiC can be fabricated by anodizing n-type 6H-SiC in HF under UV illumination. TEM reveals pores of sizes 10-30 nm with interpore spacings ranging from roughly 5 to 150 nm. This is the first reported direct observation of porous SiC formation.

  18. 6H-SiC Photoconductive Switches Triggered at Below Bandgap Wavelengths

    SciTech Connect

    Sullivan, J S; Stanley, J R

    2007-02-13

    Semi-insulating silicon carbide (SiC) is an attractive material for application as high voltage, photoconductive semiconductor switches (PCSS) due to its large bandgap, high critical electric field strength, high electron saturation velocity and high thermal conductivity. The critical field strength of 300 MV/m for 6H-SiC makes it particularly attractive for compact, high voltage, fast switching applications. To realize the benefits of the high bulk electric field strength of SiC and diffuse switch current, carriers must be excited throughout the bulk of the photo switch. Photoconducting switches with opposing electrodes were fabricated on ''a'' plane, vanadium compensated, semiinsulating, 6H-SiC substrates. The PCSS devices were switched by optically exciting deep extrinsic levels lying within the 6H-SiC bandgap. The SiC photoswitches were tested up to a bias voltage of 11000 V with a corresponding peak current of 150 A. The 6H-SiC substrates withstood average electric fields up to 27 MV/m. Minimum PCCS dynamic resistances of 2 and 10 {Omega} were obtained with 13 mJ optical pulses at 532 and 1064 nm wavelengths, respectively.

  19. Amorphization of SiC under ion and neutron irradiation

    NASA Astrophysics Data System (ADS)

    Snead, L. L.; Zinkle, S. J.; Hay, J. C.; Osborne, M. C.

    1998-05-01

    This paper presents results on the microstructure and physical properties of SiC amorphized by both ion and neutron irradiation. Specifically, 0.56 MeV Si ions have been implanted in single crystal 6H-SiC from ambient through >200°C and the critical threshold for amorphization was measured as a function of the irradiation temperature. From a high resolution transmission electron microscopy (HRTEM) study of the crystalline to amorphous transition region in these materials, elongated pockets of amorphous material oriented parallel to the free surface are observed. Single crystal 6H-SiC and hot pressed and sintered 6H and 3C SiC were neutron irradiated at approximately 70°C to a dose of ˜2.56 dpa causing complete amorphization. Property changes resulting from the crystal to amorphous transition in SiC include a density decrease of 10.8%, a hardness decrease from 38.7 to 21.0 GPa, and a decrease in elastic modulus from 528 to 292 GPa. Recrystallization of the amorphized, single crystal 6H-SiC appears to occur in two stages. In the temperature range of ˜800-1000°C, crystallites nucleate and slowly grow. In the temperature range of 1125-1150°C spontaneous nucleation and rapid growth of crystallites occur. It is further noted that amorphized 6H (alpha) SiC recrystallizes to highly faulted fcc (beta) SiC.

  20. Synergistic Effects of Iodine and Silver Ions Co-Implanted in 6H-SiC

    SciTech Connect

    Kuhudzai, Remeredzai J.; Malherbe, Johan; Hlatshwayo, T. T.; van der Berg, N. G.; Devaraj, Arun; Zhu, Zihua; Nandasiri, Manjula I.

    2015-10-23

    Motivated by the aim of understanding the release of fission products through the SiC coating of fuel kernels in modern high temperature nuclear reactors, a fundamental investigation is conducted to understand the synergistic effects of implanted silver (Ag) and iodine (I) in 6H-SiC. The implantation of the individual species, as well as the co-implantation of 360 keV ions of I and Ag at room temperature in 6H-SiC and their subsequent annealing behavior has been investigated by Secondary Ion Mass Spectrometry (SIMS), Atom Probe Tomography (APT) and X-ray Photoelectron Spectroscopy (XPS). SIMS and APT measurements indicated the presence of Ag in the co-implanted samples after annealing at 1500 ºC for 30 hours in sharp contrast to the samples implanted with Ag only. In samples implanted with Ag only, complete loss of the implanted Ag was observed. However, for I only implanted samples, some iodine was retained. APT of annealed co-implanted 6H-SiC showed clear spatial association of Ag and I clusters in SiC, which can be attributed to the observed I assisted retention of Ag after annealing. Such detailed studies will be necessary to identify the fundamental mechanism of fission products migration through SiC coatings.

  1. Identification of 6H-SiC polar faces with pull-off force of atomic force microscopy

    NASA Astrophysics Data System (ADS)

    Gan, Di; Song, Youting; Yang, Junwei; Chen, Hongxiang; Guo, Liwei; Chen, Xiaolong

    2016-12-01

    Distinguishing SiC (0001) Si-face from SiC (000-1) C-face without any damages is extremely important because the two polar faces have different physical and chemical properties which seriously influence the quality of a homoepitaxy or heteroepitaxy thin film on it. Here, a convenient and nondestructive detection method is developed to distinguish the Si-face and C-face of a (0001) oriented SiC wafer by employing a pull-off force measurement using atomic force microscopy. It is found that the pull-off force from a Si-face of 6H-SiC is about two times of that from a C-face, no matter it is a two-face chemical mechanical polishing or etched 6H-SiC wafer. The method developed here is suitable to identify polar faces of materials only if the two polar faces having different surface energy.

  2. Optical characterization of SiC wafers

    SciTech Connect

    Burton, J.C.; Pophristic, M.; Long, F.H.; Ferguson, I.

    1999-07-01

    Raman spectroscopy has been used to investigate wafers of both 4H-SiC and 6H-SiC. The two-phonon Raman spectra from both 4H- and 6H-SiC have been measured and found to be polytype dependent, consistent with changes in the vibrational density of states. They have observed electronic Raman scattering from nitrogen defect levels in both 4H- and 6H-SiC at room temperature. They have found that electronic Raman scattering from the nitrogen defect levels is significantly enhanced with excitation by red or near IR laser light. These results demonstrate that the laser wavelength is a key parameter in the characterization of SiC by Raman scattering. These results suggest that Raman spectroscopy can be used as a noninvasive, in situ diagnostic for SiC wafer production and substrate evaluation. They also present results on time-resolved photoluminescence spectra of n-type SiC wafers.

  3. VIBRATIONALLY EXCITED C{sub 6}H

    SciTech Connect

    Gottlieb, C. A.; McCarthy, M. C.; Thaddeus, P.

    2010-08-15

    Rotational spectra of the linear carbon chain radical C{sub 6}H in two low-lying excited vibrational states were observed both at millimeter wavelengths in a low-pressure glow discharge and at centimeter wavelengths in a supersonic molecular beam. Two series of harmonically related lines with rotational constants within 0.3% of the {sup 2{Pi}} ground state were assigned to the {sup 2{Sigma}} and {sup 2{Delta}} vibronic components of an excited bending vibrational level. Measurements of the intensities of the lines in the glow discharge indicate that the {sup 2{Sigma}} component lies very close to ground, but the {sup 2{Delta}} component is much higher in energy. The standard Hamiltonian for an isolated {sup 2{Delta}} state with five spectroscopic constants reproduces the observed rotational spectrum, but several high-order distortion terms in the spin-rotation interaction are needed to reproduce the spectrum of the {sup 2{Sigma}} component in C{sub 6}H and C{sub 6}D. The derived spectroscopic constants allow astronomers to calculate the rotational spectra of the {sup 2{Sigma}} and {sup 2{Delta}} states up to 260 GHz to within 0.1 km s{sup -1} or better in equivalent radial velocity.

  4. Lateral Growth Expansion of 4H/6H-SiC m-plane Pseudo Fiber Crystals by Hot Wall CVD Epitaxy

    NASA Technical Reports Server (NTRS)

    Trunek, Andrew J.; Neudeck, Philip G.; Woodworth, Andrew A.; Powell, J. A.; Spry, David J.; Raghothamachar, Balaji; Dudley, Michael

    2011-01-01

    Lateral expansion of small mixed polytype 4H/6H-SiC slivers were realized by hot wall chemical vapor deposition (HWCVD). Small slivers cut from m-oriented ..11..00.. SiC boule slices containing regions of 4H and 6H SiC were exposed to HWCVD conditions using standard silane/propane chemistry for a period of up to eight hours. The slivers exhibited approximately 1500 microns (1.5 mm) of total lateral expansion. Initial analysis by synchrotron white beam x-ray topography (SWBXT) confirms, that the lateral growth was homoepitaxial, matching the polytype of the respective underlying region of the seed sliver.

  5. Embedded SIC-POVMs

    NASA Astrophysics Data System (ADS)

    Dang, Hoan; Blanchfield, Kate; Bengtsson, Ingemar; Appleby, Marcus

    2013-03-01

    Symmetric informationally complete (SIC) sets of quantum states have applications in foundational studies of quantum mechanics, quantum tomography, quantum communication, quantum cryptography, and classical signal processing. However, their existence in every dimension has not been proven, and no general construction has been known. During our study of linear dependencies in Weyl-Heisenberg orbits, we discovered 2-dimensional SICs embedded in a 6-dimensional Hilbert space. This offers a robust construction for 2-dimensional SICs, and may potentially impact the SIC existence problem. In this talk, I will explain how this construction works, and present numerical results for some other dimensions. This work was supported in part by the Natural Sciences and Engineering Research Council of Canada and by the U. S. Office of Naval Research (Grant No. N00014-09-1-0247).

  6. Suppression of Photoanodic Surface Oxidation of n-Type 6H-SiC Electrodes in Aqueous Electrolytes.

    PubMed

    Sachsenhauser, Matthias; Walczak, Karl; Hampel, Paul A; Stutzmann, Martin; Sharp, Ian D; Garrido, Jose A

    2016-02-16

    The photoelectrochemical characterization of silicon carbide (SiC) electrodes is important for enabling a wide range of potential applications for this semiconductor. However, photocorrosion of the SiC surface remains a key challenge, because this process considerably hinders the deployment of this material into functional devices. In this report, we use cyclic voltammetry to investigate the stability of n-type 6H-SiC photoelectrodes in buffered aqueous electrolytes. For measurements in pure Tris buffer, photogenerated holes accumulate at the interface under anodic polarization, resulting in the formation of a porous surface oxide layer. Two possibilities are presented to significantly enhance the stability of the SiC photoelectrodes. In the first approach, redox molecules are added to the buffer solution to kinetically facilitate hole transfer to these molecules, and in the second approach, water oxidation in the electrolyte is induced by depositing a cobalt phosphate catalyst onto the semiconductor surface. Both methods are found to effectively suppress photocorrosion of the SiC electrodes, as confirmed by atomic force microscopy and X-ray photoelectron spectroscopy measurements. The presented study provides straightforward routes to stabilize n-type SiC photoelectrodes in aqueous electrolytes, which is essential for a possible utilization of this material in the fields of photocatalysis and multimodal biosensing.

  7. Quantum confinement effect in 6H-SiC quantum dots observed via plasmon-exciton coupling-induced defect-luminescence quenching

    NASA Astrophysics Data System (ADS)

    Guo, Xiaoxiao; Zhang, Yumeng; Fan, Baolu; Fan, Jiyang

    2017-03-01

    The quantum confinement effect is one of the crucial physical effects that discriminate a quantum material from its bulk material. It remains a mystery why the 6H-SiC quantum dots (QDs) do not exhibit an obvious quantum confinement effect. We study the photoluminescence of the coupled colloidal system of SiC QDs and Ag nanoparticles. The experimental result in conjunction with the theoretical calculation reveals that there is strong coupling between the localized electron-hole pair in the SiC QD and the localized surface plasmon in the Ag nanoparticle. It results in resonance energy transfer between them and resultant quenching of the blue surface-defect luminescence of the SiC QDs, leading to uncovering of a hidden near-UV emission band. This study shows that this emission band originates from the interband transition of the 6H-SiC QDs and it exhibits a remarkable quantum confinement effect.

  8. SiC Technology

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    1998-01-01

    Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

  9. Nucleation and growth of polycrystalline SiC

    NASA Astrophysics Data System (ADS)

    Kaiser, M.; Schimmel, S.; Jokubavicius, V.; Linnarsson, M. K.; Ou, H.; Syväjärvi, M.; Wellmann, P.

    2014-03-01

    The nucleation and bulk growth of polycrystalline SiC in a 2 inch PVT setup using isostatic and pyrolytic graphite as substrates was studied. Textured nucleation occurs under near-thermal equilibrium conditions at the initial growth stage with hexagonal platelet shaped crystallites of 4H, 6H and 15R polytypes. It is found that pyrolytic graphite results in enhanced texturing of the nucleating gas species. Reducing the pressure leads to growth of the crystallites until a closed polycrystalline SiC layer containing voids with a rough surface is developed. Bulk growth was conducted at 35 mbar Ar pressure at 2250°C in diffusion limited mass transport regime generating a convex shaped growth form of the solid-gas interface leading to lateral expansion of virtually [001] oriented crystallites. Growth at 2350°C led to the stabilization of 6H polytypic grains. The micropipe density in the bulk strongly depends on the substrate used.

  10. Chemical reactions of atomic hydrogen at SiC surface and heterogeneous chemiluminescence

    NASA Astrophysics Data System (ADS)

    Styrov, V. V.; Tyutyunnikov, V. I.; Sergeev, O. T.; Oya, Y.; Okuno, K.

    2005-02-01

    In studies of the surface properties of SiC polytypes and chemical reactions of hydrogen atoms at SiC surfaces the surface (chemi)luminescence of SiC has been applied excited in the reaction of hydrogen atoms due to chemical energy released (heterogeneous chemiluminescence, HCL). The bulk photoluminescence (PL) have also been used for comparison with surface HCL. All the samples showed HCL, but only α-SiC (6H, 15R), technologically or specially doped (predominantly by N, B, Al), exhibited PL (λex=365 nm). Cubic polycrystalline β-SiC (or 3C SiC) did not show PL. The general luminescence band of α-SiC (6H, 15R) and B and Al doped SiC (6H) was a broad yellow band with λmax ranged from 620 to 650 nm for PL (110 K). Another less intensive luminescence band is a blue one, which has been observed only at low temperatures for α-SiC (6H,15R) and B and Al doped SiC (6H) in PL spectra and as a shoulder in HCL spectra (λmax=477 nm at 110 K for 15R SiC). The green band near 540 nm was also observed sometimes in PL spectra for α-SiC. The heat of adsorption of hydrogen atoms at polycrystalline β-SiC estimated from HCL data was found to be in the range from 2 to 3 eV.

  11. Blue photoluminescence enhancement in laser-irradiated 6H-SiC at room temperature

    SciTech Connect

    Wu, Yan; Ji, Lingfei Lin, Zhenyuan; Jiang, Yijian; Zhai, Tianrui

    2014-01-27

    Blue photoluminescence (PL) of 6H-SiC irradiated by an ultraviolet laser can be observed at room temperature in dark condition. PL spectra with Gaussian fitting curve of the irradiated SiC show that blue luminescence band (∼440 nm) is more pronounced than other bands. The blue PL enhancement is the combined result of the improved shallow N-donor energy level and the unique surface state with Si nanocrystals and graphene/Si composite due to the effect of photon energy input by the short-wavelength laser irradiation. The study can provide a promising route towards the preparation of well-controlled blue photoluminescence material for light-emitting devices.

  12. Thermal expansion and thermal expansion anisotropy of SiC polytypes

    NASA Technical Reports Server (NTRS)

    Li, Z.; Bradt, R. C.

    1987-01-01

    The principal axial coefficients of thermal expansion for the (3C), (4H), and (6H) polytypes of SiC are considered to identify the structural role of the stacking layer sequence as it affects the thermal expansion. A general equation based on the fractions of cubic and hexagonal layer stacking is developed that expresses the principal axial thermal expansion coefficients of all of the SiC polytypes. It is then applied to address the thermal expansion anisotropy of the noncubic SiC structures.

  13. Experimental demonstration of mode-selective phonon excitation of 6H-SiC by a mid-infrared laser with anti-Stokes Raman scattering spectroscopy

    SciTech Connect

    Yoshida, Kyohei; Hachiya, Kan; Okumura, Kensuke; Mishima, Kenta; Inukai, Motoharu; Torgasin, Konstantin; Omer, Mohamed; Sonobe, Taro; Zen, Heishun; Negm, Hani; Kii, Toshiteru; Masuda, Kai; Ohgaki, Hideaki

    2013-10-28

    Mode-selective phonon excitation by a mid-infrared laser (MIR-FEL) is demonstrated via anti-Stokes Raman scattering measurements of 6H-silicon carbide (SiC). Irradiation of SiC with MIR-FEL and a Nd-YAG laser at 14 K produced a peak where the Raman shift corresponds to a photon energy of 119 meV (10.4 μm). This phenomenon is induced by mode-selective phonon excitation through the irradiation of MIR-FEL, whose photon energy corresponds to the photon-absorption of a particular phonon mode.

  14. Study of the interaction of 4H-SiC and 6H-SiC(0001)Si surfaces with atomic nitrogen

    NASA Astrophysics Data System (ADS)

    Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni; Brown, April; Kim, Tong-Ho

    2004-11-01

    The interaction of atomic nitrogen with 4H- and 6H-SiC(0001) Si-face surfaces is investigated. Clean and atomically smooth terraced surfaces obtained by in situ cleaning using atomic hydrogen have been exposed at 200°C and 750°C to atomic nitrogen produced by a rf remote N2 plasma. Spectroscopic ellipsometry is used for real-time monitoring of the kinetics of SiC surface modifications, and determining the thickness and properties of the nitrided layer. Surface potential measurements reveal the band bending of the nitrided SiC surface. An improvement in the heteroepitaxy of GaN on the low-temperature nitrided SiC surface is found.

  15. ICP Etching of SiC

    SciTech Connect

    Grow, J.M.; Lambers, E.S.; Ostling, M.; Pearton, S.J.; Ren, F.; Shul, R.J.; Wang, J.J.; Zetterling, C.-M.

    1999-02-04

    A number of different plasma chemistries, including NF{sub 3}/O{sub 2}, SF{sub 6}/O{sub 2}, SF{sub 6}/Ar, ICl, IBr, Cl{sub 2}/Ar, BCl{sub 3}/Ar and CH{sub 4}/H{sub 2}/Ar, have been investigated for dry etching of 6H and 3C-SiC in a Inductively Coupled Plasma tool. Rates above 2,000 {angstrom} cm{sup {minus}1} are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl{sub 2}-based etching does not provide high rates, even though the potential etch products (SiCi{sub 4} and CCl{sub 4}) are volatile. Photoresist masks have poor selectivity over SiC in F{sub 2}-based plasmas under normal conditions, and ITO or Ni are preferred.

  16. Graphene synthesis on SiC: Reduced graphitization temperature by C-cluster and Ar-ion implantation

    NASA Astrophysics Data System (ADS)

    Zhang, R.; Li, H.; Zhang, Z. D.; Wang, Z. S.; Zhou, S. Y.; Wang, Z.; Li, T. C.; Liu, J. R.; Fu, D. J.

    2015-08-01

    Thermal decomposition of SiC is a promising method for high quality production of wafer-scale graphene layers, when the high decomposition temperature of SiC is substantially reduced. The high decomposition temperature of SiC around 1400 °C is a technical obstacle. In this work, we report on graphene synthesis on 6H-SiC with reduced graphitization temperature via ion implantation. When energetic Ar, C1 and C6-cluster ions implanted into 6H-SiC substrates, some of the Si-C bonds have been broken due to the electronic and nuclear collisions. Owing to the radiation damage induced bond breaking and the implanted C atoms as an additional C source the graphitization temperature was reduced by up to 200 °C.

  17. Performance of colloidal silica and ceria based slurries on CMP of Si-face 6H-SiC substrates

    NASA Astrophysics Data System (ADS)

    Chen, Guomei; Ni, Zifeng; Xu, Laijun; Li, Qingzhong; Zhao, Yongwu

    2015-12-01

    Colloidal silica and ceria based slurries, both using KMnO4 as an oxidizer, for chemical mechanical polishing (CMP) of Si-face (0 0 0 1) 6H-SiC substrate, were investigated to obtain higher material removal rate (MRR) and ultra-smooth surface. The results indicate that there was a significant difference in the CMP performance of 6H-SiC between silica and ceria based slurries. For the ceria based slurries, a higher MRR was obtained, especially in strong acid KMnO4 environment, and the maximum MRR (1089 nm/h) and a smoother surface with an average roughness Ra of 0.11 nm was achieved using slurries containing 2 wt% colloidal ceria, 0.05 M KMnO4 at pH 2. In contrast, due to the attraction between negative charged silica particles and positive charged SiC surface below pH 5, the maximum MRR of silica based slurry was only 185 nm/h with surface roughness Ra of 0.254 nm using slurries containing 6 wt% colloidal silica, 0.05 M KMnO4 at pH 6. The polishing mechanism was discussed based on the zeta potential measurements of the abrasives and the X-ray photoelectron spectroscopy (XPS) analysis of the polished SiC surfaces.

  18. Low damage, highly anisotropic dry etching of SiC

    SciTech Connect

    Wang, J.J.; Hong, J.; Lambers, E.S.; Pearton, S.J.; Ren, F.; Ostling, M.; Zetterling, C.M.; Grow, J.M.; Shul, R.J.

    1998-03-01

    A parametric study of the etching characteristics of 6H p{sup +} and n{sup +} SiC and thin film SiC{sub 0.5}N{sub 0.5} in Inductively Coupled Plasma NF{sub 3}/O{sub 2} and NF{sub 3}/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF{sub 3} percentage and rf chuck power. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tin-oxide (ITO) masks display relatively good etch selectivity over SiC (maximum of {approximately} 70:1), while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF{sub 3}:O{sub 2} conditions.

  19. Stress Analysis of SiC MEMS Using Raman Spectroscopy

    NASA Astrophysics Data System (ADS)

    Ness, Stanley J.; Marciniak, M. A.; Lott, J. A.; Starman, L. A.; Busbee, J. D.; Melzak, J. M.

    2003-03-01

    During the fabrication of Micro-Electro-Mechanical Systems (MEMS), residual stress is often induced in the thin films that are deposited to create these systems. These stresses can cause the device to fail due to buckling, curling, or fracture. Industry is looking for ways to characterize the stress during the deposition of thin films in order to reduce or eliminate device failure. Micro-Raman spectroscopy has been successfully used to characterize poly-Si MEMS devices made with the MUMPS® process. Raman spectroscopy was selected because it is nondestructive, fast and has the potential for in situ stress monitoring. This research attempts to use Raman spectroscopy to analyze the stress in SiC MEMS made with the MUSiC® process. Raman spectroscopy is performed on 1-2-micron-thick SiC thin films deposited on silicon, silicon nitride, and silicon oxide substrates. The most common poly-type of SiC found in thin film MEMS made with the MUSiC® process is 3C-SiC. Research also includes baseline spectra of 6H, 4H, and 15R poly-types of bulk SiC.

  20. Mid-ultraviolet pulsed laser micromachining of SiC

    NASA Astrophysics Data System (ADS)

    Qi, Litao; Li, Mingxing; Lin, Haipeng; Hu, Jinping; Tang, Qingju; Liu, Chunsheng

    2014-11-01

    This paper provides an investigation of the ablation behavior of single crystal 4H-SiC and 6H-SiC wafer to improve the manufacturability and high-temperature performance of SiC using laser applications. 266nm pulsed laser micromachining of SiC was investigated. The purpose is to establish suitable laser parametric regime for the fabrication of high accuracy, high spatial resolution and thin diaphragms for high-temperature MEMS pressure sensor applications. Etch rate, ablation threshold and quality of micromachined features were evaluated. The governing ablation mechanisms, such as thermal vaporization, phase explosion, and photomechanical fragmentation, were correlated with the effects of pulse energy. The ablation threshold is obtained with ultraviolet pulsed laser ablation. The results suggested ultraviolet pulsed laser's potential for rapid manufacturing. Excellent quality of machined features with little collateral thermal damage was obtained in the lower pulse energy range. The leading material removal mechanisms under these conditions were discussed.

  1. Surface engineering of SiC via sublimation etching

    NASA Astrophysics Data System (ADS)

    Jokubavicius, Valdas; Yazdi, Gholam R.; Ivanov, Ivan G.; Niu, Yuran; Zakharov, Alexei; Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa

    2016-12-01

    We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10-5 mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  2. Luminescence mechanisms in 6H-SiC nanocrystals

    NASA Astrophysics Data System (ADS)

    Botsoa, J.; Bluet, J. M.; Lysenko, V.; Sfaxi, L.; Zakharko, Y.; Marty, O.; Guillot, G.

    2009-10-01

    Experimental conditions allowing consequent selection of a dominating photoluminescence mechanism in 6H-SiC nanocrystals at room temperature are reported. Electrostatic screening of surface states involved in radiative transitions can be efficiently achieved by polar ethanol molecules. This leads to a preponderant radiative channel between the electronic levels corresponding to the impurity atoms (N and Al). This radiative channel is deactivated by centrifugation-induced selection of the smallest colloidal 6H-SiC nanocrystals in which the probability to have both donor and acceptor atoms is negligible. Consequently, for these smallest 6H-SiC nanocrystals with switched off transitions between surface states and impurity levels, quantum-confinement effect can be clearly observed. The formation of energy subbands in the 6H-SiC nanocrystals is then evidenced from photoluminescence excitation and absorption measurements performed on the centrifuged colloidal nanosuspension. A most probable mean diameter of 1.9 nm for these particles is deduced from calculation of energy levels in the effective-mass approximation.

  3. Identification and analysis of the human murine putative chromatin structure regulator SUPT6H and Supt6h

    SciTech Connect

    Chiang, Pei-Wen; Wang, SuQing; Hillman, J.

    1996-06-15

    We have isolated and sequenced SUPT6H and Supt6h, the human and murine homologues of the Saccharomyces cerevisiae and Caenorhabditis elegans genes SPT6 (P using 1603 aa = 6.7 e-{sup 95}) and emb-5 (P using 1603 aa = 7.0 e-{sup 288}), respectively. The human and murine SPT6 homologues are virtually identical, as they share >98% identity and >99% similarity at the protein level. The derived amino acid sequences of these two genes predict a 1603-aa protein (human) and a 1726-bp protein (mouse), respectively. There were several known features, including a highly acidic 5{prime}-region, a degenerate SH2 domain, and a leucine zipper. These features are consistent with a nuclear protein that regulates transcription, whose extreme conservation underscores the likely importance of this gene in mammalian development. Expression of human and murine SPT6 homologues was analyzed by Northern blotting, which revealed a 7.0-kb transcript that was expressed constitutively. The SPT6 homologue was mapped to chromosome 17q11.2 in human by somatic cell hybrid analysis and in situ hybridization. These data indicate that SUPT6H and Supt6h are functionally analogous to SPT6 and emb-5 and may therefore regulate transcription through establishment or maintenance of chromatin structure. 23 refs., 3 figs.

  4. Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC

    NASA Astrophysics Data System (ADS)

    Mitchel, W. C.; Mitchell, W. D.; Fang, Z. Q.; Look, D. C.; Smith, S. R.; Smith, H. E.; Khlebnikov, Igor; Khlebnikov, Y. I.; Basceri, C.; Balkas, C.

    2006-08-01

    Temperature dependent Hall effect (TDH), low temperature photoluminescence (LTPL), secondary ion mass spectrometry (SIMS), optical admittance spectroscopy (OAS), and thermally stimulated current (TSC) measurements have been made on 6H-SiC grown by the physical vapor transport technique without intentional doping. n- and p-type as well semi-insulating samples were studied to explore the compensation mechanism in semi-insulating high purity SiC. Nitrogen and boron were found from TDH and SIMS measurements to be the dominant impurities that must be compensated to produce semi-insulating properties. The electrical activation energy of the semi-insulating sample determined from the dependence of the resistivity was 1.0eV. LTPL lines near 1.00 and 1.34eV, identified with the defects designated as UD-1 and UD-3, were observed in all three samples but the intensity of the UD-1 line was almost a factor of 10 more in the n-type sample than in the the p-type sample with that in the semi-insulating sample being intermediate between those two. OAS and TSC experiments confirmed the high purity of this material. The results suggest that the relative concentrations of a dominant deep level and nitrogen and boron impurities can explain the electrical properties in this material.

  5. 6H Silicon Carbide Photoconductive Switches for High Power Applications

    DTIC Science & Technology

    2006-11-01

    6H SILICON CARBIDE PHOTOCONDUCTIVE SWITCHES FOR HIGH POWER APPLICATIONS W. C. Nunnally*, N. Islam, K. Kelkar & C. Fessler Photonics for Radars...PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER 7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES) Photonics for Radars and Optical Systems...switches. Additional work by the UMC Photonics for Radar and Optical Systems (PROS) group has demonstrated that the relatively new material of

  6. Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC

    PubMed Central

    2011-01-01

    Micro-Raman and micro-transmission imaging experiments have been done on epitaxial graphene grown on the C- and Si-faces of on-axis 6H-SiC substrates. On the C-face it is shown that the SiC sublimation process results in the growth of long and isolated graphene ribbons (up to 600 μm) that are strain-relaxed and lightly p-type doped. In this case, combining the results of micro-Raman spectroscopy with micro-transmission measurements, we were able to ascertain that uniform monolayer ribbons were grown and found also Bernal stacked and misoriented bilayer ribbons. On the Si-face, the situation is completely different. A full graphene coverage of the SiC surface is achieved but anisotropic growth still occurs, because of the step-bunched SiC surface reconstruction. While in the middle of reconstructed terraces thin graphene stacks (up to 5 layers) are grown, thicker graphene stripes appear at step edges. In both the cases, the strong interaction between the graphene layers and the underlying SiC substrate induces a high compressive thermal strain and n-type doping. PMID:21801347

  7. High-Field Fast-Risetime Pulse Failures in 4H- and 6H-SiC pn Junction Diodes

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Fazi, Christian

    1996-01-01

    We report the observation of anomalous reverse breakdown behavior in moderately doped (2-3 x 10(exp 17 cm(exp -3)) small-area micropipe-free 4H- and 6H-SiC pn junction diodes. When measured with a curve tracer, the diodes consistently exhibited very low reverse leakage currents and sharp repeatable breakdown knees in the range of 140-150 V. However, when subjected to single-shot reverse bias pulses (200 ns pulsewidth, 1 ns risetime), the diodes failed catastrophically at pulse voltages of less than 100 V. We propose a possible mechanism for this anomalous reduction in pulsed breakdown voltage relative to dc breakdown voltage. This instability must be removed so that SiC high-field devices can operate with the same high reliability as silicon power devices.

  8. The investigation of cobalt intercalation underneath epitaxial graphene on 6H-SiC(0 0 0 1)

    NASA Astrophysics Data System (ADS)

    Zhang, Yuxi; Zhang, Hanjie; Cai, Yiliang; Song, Junjie; He, Pimo

    2017-02-01

    The intercalation behaviour of cobalt underneath both epitaxial graphene monolayer and bilayer on 6H-SiC(0001) have been investigated by scanning tunneling microscopy (STM) and density functional theory (DFT). Upon deposition, cobalt atoms prefer to agglomerate into clusters on the epitaxial graphene. After annealing the sample to 850 °C, the intercalation of the adsorbed cobalt atoms into both monolayer and bilayer epitaxial graphene on SiC takes place, as observed by the atomically resolved STM images. Further studies based on DFT modeling and simulated STM images show that, resulting from the interplay between the intercalated cobalt atoms and the carbon layers sandwiching it, the most energetically favourable intercalation sites of cobalt atoms underneath monolayer and bilayer graphene differ. Furthermore, the results show energy barriers of 0.60 eV and 0.41 eV for cobalt penetration through mono-vacancy defects at monolayer and bilayer graphene.

  9. Diffusion of helium in SiC and implications for retention of cosmogenic He

    NASA Astrophysics Data System (ADS)

    Cherniak, D. J.; Watson, E. B.; Trappisch, R.; Thomas, J. B.; Chaussende, D.

    2016-11-01

    Diffusion of helium has been characterized in silicon carbide of cubic and hexagonal (4H and 6H) forms. Polished sections of SiC were implanted with 3He at 100 keV at a dose of 1 × 1015/cm2. The implanted SiC samples were sealed under vacuum in silica glass ampoules, and annealed in 1-atm furnaces. 3He distributions following all experiments were measured with Nuclear Reaction Analysis using the reaction 3He(d,p)4He. For He diffusion in cubic SiC and 4H hexagonal SiC we obtain the following Arrhenius relations: Dcubic = 1.83 ×10-6 exp (- 254 ± 10kJmol-1 /RT)m2s-1 . D4H = 4.78 ×10-7 exp (- 255 ± 29kJmol-1 /RT)m2s-1 . While He diffusion is considerably slower in SiC than in many silicate phases, He retentivity may be limited under some conditions. For example, helium will be lost from SiC grains over much shorter timescales than potential survival times of SiC presolar grains in the solar nebula. When exposed to impact heating followed by slow cooling, nearly complete loss of He from SiC grains near the site of impact will occur within several hours to a few days. For SiC grains at greater distance from impact sites, He would be better retained, depending on the rapidity of cooling. At tens of km away from a large impactor, where peak T would be ∼800 K, SiC grains would lose about 50% of their He if the grains cooled within a few thousand years, and 5% if they cooled within a few tens of years. At greater distances where heating is more modest (500 K and lower), SiC grains would be quite retentive of He even for cases of very slow cooling. Helium would also be retained in cases of impact heating followed by very rapid cooling. For these short heating pulses, 10 μm diameter SiC grains would retain more than 50% of their He for peak heating temperatures of 2173, 1973 and 1773 K for durations of 3, 10 and 60 s, respectively.

  10. The interface analysis of GaN grown on 0° off 6H-SiC with an ultra-thin buffer layer

    NASA Astrophysics Data System (ADS)

    Sun, Zheng; Ohta, Akio; Miyazaki, Seiichi; Nagamatsu, Kentaro; Lee, Hojun; Olsson, Marc; Ye, Zheng; Deki, Manato; Honda, Yoshio; Amano, Hiroshi

    2016-01-01

    Previously, we reported a growth method by metalorganic vapor phase epitaxy using a single two-dimensional growth step, resulting in 1.2-µm crack-free GaN directly grown on 6H-SiC substrate. The introduction of Al-treatment prior to the standard GaN growth step resulted in improved surface wetting of gallium on the SiC substrate. Transmission electron microscope and energy dispersive spectrometer analysis of the epitaxial interface to the SiC determined that an ultra-thin AlGaN interlayer had formed measuring around 2-3 nm. We expect our growth technique can be applied to the fabrication of GaN/SiC high frequency and high power devices.

  11. Low energy electron irradiation induced deep level defects in 6H-SiC: the implication for the microstructure of the deep levels E1/E2.

    PubMed

    Chen, X D; Yang, C L; Gong, M; Ge, W K; Fung, S; Beling, C D; Wang, J N; Lui, M K; Ling, C C

    2004-03-26

    N-type 6H-SiC samples irradiated with electrons having energies of E(e)=0.2, 0.3, 0.5, and 1.7 were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for E(e)>/=0.3 MeV, deep levels ED1, E(1)/E(2), and E(i) appeared. By considering the minimum energy required to displace the C atom or the Si atom in the SiC lattice, it is concluded that generation of the deep levels E(1)/E(2), as well as ED1 and E(i), involves the displacement of the C atom in the SiC lattice.

  12. Low Energy Electron Irradiation Induced Deep Level Defects in 6H-SiC: The Implication for the Microstructure of the Deep Levels E1/E2

    NASA Astrophysics Data System (ADS)

    Chen, X. D.; Yang, C. L.; Gong, M.; Ge, W. K.; Fung, S.; Beling, C. D.; Wang, J. N.; Lui, M. K.; Ling, C. C.

    2004-03-01

    N-type 6H-SiC samples irradiated with electrons having energies of Ee=0.2, 0.3, 0.5, and 1.7 were studied by deep level transient technique. No deep level was detected at below 0.2MeV irradiation energy while for Ee≥0.3 MeV, deep levels ED1, E1/E2, and Ei appeared. By considering the minimum energy required to displace the C atom or the Si atom in the SiC lattice, it is concluded that generation of the deep levels E1/E2, as well as ED1 and Ei, involves the displacement of the C atom in the SiC lattice.

  13. Low noise wide bandgap SiC based IMPATT diodes at sub-millimeter wave frequencies and at high temperature

    NASA Astrophysics Data System (ADS)

    Pradhan, J.; Pattanaik, S. R.; Swain, S. K.; Dash, G. N.

    2014-03-01

    We have presented a comparative account of the high frequency prospective as well as noise behaviors of wide-bandgap 4H-SiC and 6H-SiC based on different structures of IMPATT diodes at sub-millimeter-wave frequencies up to 2.18 THz. The computer simulation study establishes the feasibility of the SiC based IMPATT diode as a high power density terahertz source. The most significant feature lies in the noise behavior of the SiC IMPATT diodes. It is noticed that the 6H-SiC DDR diode shows the least noise measure of 26.1 dB as compared to that of other structures. Further, it is noticed that the noise measure of the SiC IMPATT diode is less at a higher operating frequency compared to that at a lower operating frequency.

  14. Technological state of the art of SiC

    NASA Astrophysics Data System (ADS)

    Tyc, Stdphane

    1993-10-01

    In a recent paper [1], Locatelli and Gamal describe the technological state of the art of SiC compared with Si. I would like to bear witness to the rapid advancement of SiC technology by giving a slighty updated account of SiC technology. The boule growth of SiC now achieves diameters up to 60 mm. One of the most problematic standing issues is the presence of micropipes in the wafers with a density of the order of 100 cm^{-2} or more [2]. The doping range available in epilayers is now wider. CAFE Research [3] accepts orders for doping densities from 5 × 10^{15} cm^{-3} to 1 × 10^{19} cm^{-3} in both N and P type. However their state of the art is better (we have received P type with doping 4 × 10^{14} cm^{-3} and N type with doping over 2 × 10^{19} cm^{-3} and they have also delivered [4] N type doping of 5 × 10^{14} cm^{-3}). As for large P dopings, Dmitriev has published [5] dopings over 10^{20} cm^{-3} The specific resistance of contacts on N type layers has also rapidly improved. Kelner has published results of 3 × 10^{-6} Ohm.cm2 with Ni contacts [6]. We have obtained with molybdenum [7] specific resistances of 2 × 10^{-5} Ohm.cm2 on epitaxies doped to 5 × 10^{18} cm^{-3} This value should be rapidly lowered as higher doped layers are used. In sum, I do agree with the authors of [1] that the technology of 6H SiC is rapidly advancing, thanks to breakthroughs in material growth and to a wide ranging renewed interest in this material. The pace may actually be higher than hitherto realized. References: [1] Locatelli and Gamal, J. Phys. III France 3 (1993) 1101. [2] Barret D. L. et al., Tenth Int. Conf. on Crystal Growth, San Diego, CA, USA 16-21 (August 1992). [3] CREE Research Inc., 2810 Meridian Parkway, Durham, NC 27713, USA. [4] Parrish M., private communication. [5] Dmitriev et al., Ext. Abstracts of the Electrochemical Soc. Meeting, 4, 89-2 (1989) 711. [6] Workshop on SiC Material and Devices (Charlottesville, September 10-11 1992) VA 22901. [7] Tyc

  15. Trisodium citrate, Na3(C6H5O7)

    PubMed Central

    Rammohan, Alagappa; Kaduk, James A.

    2016-01-01

    The crystal structure of anhydrous tris­odium citrate, Na3(C6H5O7), has been solved and refined using synchrotron X-ray powder diffraction data, and optimized using density functional theory (DFT). There are two independent five-coordinate Na+ and one six-coordinate Na+ cations in the asymmetric unit. The [NaO5] and [NaO6] polyhedra share edges and corners to form a three-dimensional framework. There are channels parallel to the a and b axes in which the remainder of the citrate anions reside. The only hydrogen bonds are an intra­molecular one between the hy­droxy group and one of the terminal carboxyl­ate O atoms and an intermolecular one between a methylene group and the hydroxyl O atom. PMID:27308044

  16. 6H-SiC Photoconductive Switches Triggered at Below Bandgap Wavelengths

    DTIC Science & Technology

    2006-05-01

    gap wavelengths of light to trigger the switches. Lateral geometry surface PCSS are limited by surface flashover , surface carrier mobility, and high...Livermore National Laboratory Livermore,CA 94550 Abstract-Semi-insulating Silicon Carbide (SiC) is an attractive material to use to construct high...Previous SiC PCSS work [1,2,3] used high resistivity, low impurity SiC polytypes and focused on lateral geometry surface switches that used above band

  17. Micro-Raman Measurements and Depth Profiling of SiC

    NASA Astrophysics Data System (ADS)

    Roughani, Bahram; Ramabadran, Uma

    2003-03-01

    Recent progress in growth of high quality 4H- SiC and 6H-SiC polytypes materials may lead to new applications for SiC as high power, high temperature, and high frequency devices that can tolerate harsh environments. Nondestructive techniques that could be used in analyzing various layers of such materials after growth or after exposure to harsh environment could be used in investigation of induced defects or structural damages. We have utilized micro-Raman scattering to investigate the depth profiling of Nitrogen doped 4H-SiC samples. Heavily N-doped 4H-SiC epilayers grown on low doped 4H-SiC substrates were examined. Each SiC sample was placed on micro-positioning translational stage in order to accurately control the focal plane of the laser beam within the sample by adjusting normal distance of the microscope objective with respect to the SiC wafer. We were able to clearly distinguish the epilayer from the SiC substrate. Strong phonon peaks and distinct coupled plasmon-LO phonon modes from the N-doped epilayer were used in this depth profiling analysis. A scattering efficiency model describing the optimal focusing condition for backscattering from a translucent sample was developed. The experimental results of depth profiling and our model for optimal backscattering condition will be presented and discussed.

  18. The Poole-Frenkel effect in 6H-SiC diode characteristics

    SciTech Connect

    Pelaz, L.; Orantes, J.L.; Vincente, J.; Bailon, L.A.; Barbolla, J. . Dept. de Electricidad y Electronica)

    1994-04-01

    The large bandgap of SiC makes the recombination mechanism the main process in determining the forward current in a large range of temperature. The authors have added the Poole-Frenkel effect to the conventional Shockley-Read-Hall (SRH) term of the numerical device simulator MEDICI. This paper shows the influence of this effect on SiC.

  19. Does the metal-metal sextuple bond exist in the bimetallic sandwich compounds Cr2(C6H6)2, Mo2(C6H6)2, and W2(C6H6)2?†

    NASA Astrophysics Data System (ADS)

    Sun, Zhi; Schaefer, Henry F., III; Xie, Yaoming; Liu, Yongdong; Zhong, Rugang

    2013-09-01

    Although evanescent at best, the bare dimers of the elements Cr, Mo, and W have been identified as possible candidates for the sextuple metal-metal bond. The corresponding dibenzene sandwich compounds Cr2(C6H6)2, Mo2(C6H6)2, and W2(C6H6)2, satisfy the '18-Electron Rule', and might achieve high-order metal-metal bonds and longer lifetimes at the same time. Twenty-two different DFT methods have been used to evaluate this possibility. Based on the present Wiberg bond index and molecular orbital analyses, however, only quadruple metal-metal bonds are predicted for the electronic ground states of Cr2(C6H6)2, Mo2(C6H6)2, and W2(C6H6)2, rather than the sextuple or even quintuple bonds, for both singlet and triplet electronic states. It is possible to force the hypothesised D 6h sextuple bond electron configuration, but the resulting energy is 39 kcal/mol above the D 2h quadruple bond structure for Cr2(C6H6)2. However, the constrained sextuple bond structure for Mo2(C6H6)2 lies 19 kcal/mol above the Mo?Mo singlet. For W2(C6H6)2 the sextuple bond structure is predicted to lie only 3 kcal/mol above the W?W structure. Thus the answer to the question raised in our title is 'almost' for the tungsten-sextuple bond.

  20. SiC Deep Ultraviolet Avalanche Photodetectors

    DTIC Science & Technology

    2010-10-01

    filters and SEM cross-section of dielectric stack filter. • GE SiC Solar blind detector demonstrated the best response in deep UV spectral region...Bolotnikov, A., Frechette, J., Verghese, S., Grossmann, P., Shaw, G.A. SiC APDs and arrays for UV and solar blind detection (2009) Conference Proceedings...optimized using optical and electrical device simulations , and associated fabrication methods for solar - blind SiC APD arrays have been developed

  1. Aluminum Nitride-Silicon Carbide Alloy Crystals Grown on SiC Substrates by Sublimation

    SciTech Connect

    Gu, Z; Du, Li; Edgar, J H; Payzant, E Andrew; Walker, Larry R; Liu, R; Engelhard, M H

    2005-01-01

    AlN-SiC alloy crystals, with a thickness greater than 500μm, were grown on 4H- and 6H-SiC substrates from a mixture of AlN and SiC powders by the sublimation-recondensation method at 1860-1990 C. On-axis SiC substrates produced a rough surface covered with hexagonal grains, while 6H- and 4H- off-axis SiC substrates with different miscut angles (8 or 3.68 ) formed a relatively smooth surface with terraces and steps. The substrate misorientation ensured that the AlNSiC alloy crystals grew two dimensionally as identified by scanning electron microscopy (SEM). Xray diffraction (XRD) and transmission electron microscopy (TEM) confirmed that the AlN-SiC alloys had the wurtzite structure. Electron probe microanalysis (EPMA) and x-ray photoelectron spectroscopy (XPS) demonstrated that the resultant alloy crystals had non-stoichiometric ratios of Al:N and Si:C and a uniform composition throughout the alloy crystal from the interface to the surface. The composition ratio of Al:Si of the alloy crystals changed with the growth temperature, and differed from the original source composition, which was consistent with the results predicted by thermodynamic calculation of the solid-vapor distribution of each element. XPS detected the bonding between Si-C, Si-N, Si-O for the Si 2p spectra. The dislocation density decreased with the growth, which was lower than 10^6cm-2 at the alloy surface, more than two orders of magnitude lower compared to regions close to the crystal/substrate interface, as determined by TEM.

  2. Study of defect structures in 6H-SiC a/m-plane pseudofiber crystals grown by hot-wall CVD epitaxy

    DOE PAGES

    Goue, Ouloide Y.; Raghothamachar, Balaji; Yang, Yu; ...

    2015-11-25

    Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match themore » polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed–epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g·b and g·b×l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed–homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Lastly, the implication of these results for improving the LTC growth process is addressed.« less

  3. Study of defect structures in 6H-SiC a/m-plane pseudofiber crystals grown by hot-wall CVD epitaxy

    SciTech Connect

    Goue, Ouloide Y.; Raghothamachar, Balaji; Yang, Yu; Guo, Jianqiu; Dudley, Michael; Kisslinger, Kim; Trunek, Andrew J.; Neudeck, Philip G.; Spry, David J.; Woodworth, Andrew A.

    2015-11-25

    Structural perfection of silicon carbide (SiC) single crystals is essential to achieve high-performance power devices. A new bulk growth process for SiC proposed by researchers at NASA Glenn Research Center, called large tapered crystal (LTC) growth, based on axial fiber growth followed by lateral expansion, could produce SiC boules with potentially as few as one threading screw dislocation per wafer. In this study, the lateral expansion aspect of LTC growth is addressed through analysis of lateral growth of 6H-SiC a/m-plane seed crystals by hot-wall chemical vapor deposition. Preliminary synchrotron white-beam x-ray topography (SWBXT) indicates that the as-grown boules match the polytype structure of the underlying seed and have a faceted hexagonal morphology with a strain-free surface marked by steps. SWBXT Laue diffraction patterns of transverse and axial slices of the boules reveal streaks suggesting the existence of stacking faults/polytypes, and this is confirmed by micro-Raman spectroscopy. Transmission x-ray topography of both transverse and axial slices reveals inhomogeneous strains at the seed–epilayer interface and linear features propagating from the seed along the growth direction. Micro-Raman mapping of an axial slice reveals that the seed contains high stacking disorder, while contrast extinction analysis (g·b and g·b×l) of the linear features reveals that these are mostly edge-type basal plane dislocations. Further high-resolution transmission electron microscopy investigation of the seed–homoepilayer interface also reveals nanobands of different SiC polytypes. A model for their formation mechanism is proposed. Lastly, the implication of these results for improving the LTC growth process is addressed.

  4. 29 CFR 510.21 - SIC codes.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 29 Labor 3 2010-07-01 2010-07-01 false SIC codes. 510.21 Section 510.21 Labor Regulations Relating... Classification of Industries § 510.21 SIC codes. (a) The Conference Report specifically cites Puerto Rico's... stated that data “should be at a level of specificity comparable to the four digit Standard Industry...

  5. Solvent effect on infrared spectra of methyl methacrylate in CCl4/C6H14, CHCl3/C6H14 and C2H5OH/C6H14 binary solvent systems.

    PubMed

    Zheng, Jianping; Liu, Qing; Zhang, Hui; Fang, Danjun

    2004-11-01

    Research of methyl methacrylate (MMA) in three kinds of binary solvent systems (CCl4/C6H14, CHCl3/C6H14 and C2H5OH/C6H14) on the infrared (IR) spectra was reported. Two types of carbonyl stretching vibration bands for MMA in CHCl3/C6H14 or C2H5OH/C6H14 mixtures were found with the changing of the mole fraction of CHCl3 (XCHCl3) or C2H5OH (XC2H5OH). The carbonyl stretching vibration bands at lower frequencies in the above two mixtures were attributed to the formation of hydrogen bonding between MMA and CHCl3 or C2H5OH. While in CCl4/C6H14 mixtures there was only one type of carbonyl stretching vibration band of MMA. Good linear correlations between the frequencies of C=O or C=C stretching vibration band of MMA and XCCl4, XCHCl3 or XC2H5OH were found, respectively. The solute-solvent interactions in the three different binary solvent systems were discussed in detail.

  6. Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures using a Time-Multiplexed Etch-Passivate Process

    NASA Technical Reports Server (NTRS)

    Evans, Laura J.; Beheim, Glenn M.

    2006-01-01

    High aspect ratio silicon carbide (SiC) microstructures are needed for microengines and other harsh environment micro-electro-mechanical systems (MEMS). Previously, deep reactive ion etching (DRIE) of low aspect ratio (AR less than or = 1) deep (greater than 100 micron) trenches in SiC has been reported. However, existing DRIE processes for SiC are not well-suited for definition of high aspect ratio features because such simple etch-only processes provide insufficient control over sidewall roughness and slope. Therefore, we have investigated the use of a time-multiplexed etch-passivate (TMEP) process, which alternates etching with polymer passivation of the etch sidewalls. An optimized TMEP process was used to etch high aspect ratio (AR greater than 5) deep (less than 100 micron) trenches in 6H-SiC. Power MEMS structures (micro turbine blades) in 6H-SiC were also fabricated.

  7. Photoelectrochemical etching of silicon carbide (SiC) and its characterization

    NASA Technical Reports Server (NTRS)

    Collins, D. M.; Harris, G. L.; Wongchotigul, K.

    1995-01-01

    Silicon carbide (SiC) is an attractive semiconductor material for high speed, high density, and high temperature device applications due to its wide bandgap (2.2-3.2 eV), high thermal conductivity, and high breakdown electric field (4 x 10(exp 6) V/cm). An instrumental process in the fabrication of semiconductor devices is the ability to etch in a highly controlled and selective manner for direct patterning techniques. A novel technique in etching using electrochemistry is described. This procedure involves the ultraviolet (UV) lamp-assisted photoelectrochemical etching of n-type 3C- and 6H-SiC to enhance the processing capability of device structures in SiC. While under UV illumination, the samples are anodically biased in an HF based aqueous solution since SiC has photoconductive properties. In order for this method to be effective, the UV light must be able to enhance the production of holes in the SiC during the etching process thus providing larger currents with light from the photocurrents generated than those currents with no light. Otherwise dark methods would be used as in the case of p-type 3C-SiC. Experiments have shown that the I/V characteristics of the SiC-electrolyte interface reveal a minimum etch voltage of 3 V and 4 V for n- and p-type 3C-SiC, respectively. Hence it is possible for etch-stops to occur. Etch rates calculated have been as high as 0.67 micrometer/min for p-type, 1.4 micrometer/min for n-type, and 1.1 micrometer/min for pn layer. On n-type 3C- SiC, an oxide formation is present where after etching a yellowish layer corresponds to a low Si/C ratio and a white layer corresponds to a high Si/C ratio. P-type 3C-SiC shows a grayish layer. Additionally, n-type 6H-SiC shows a brown layer with a minimum etch voltage of 3 V.

  8. Tip induced mechanical deformation of epitaxial graphene grown on reconstructed 6H-SiC(0001) surface during scanning tunneling and atomic force microscopy studies

    NASA Astrophysics Data System (ADS)

    Morán Meza, José Antonio; Lubin, Christophe; Thoyer, François; Cousty, Jacques

    2015-06-01

    The structural and mechanical properties of an epitaxial graphene (EG) monolayer thermally grown on top of a 6H-SiC(0001) surface were studied by combined dynamic scanning tunneling microscopy (STM) and frequency modulation atomic force microscopy (FM-AFM). Experimental STM, dynamic STM and AFM images of EG on 6H-SiC(0001) show a lattice with a 1.9 nm period corresponding to the (6 × 6) quasi-cell of the SiC surface. The corrugation amplitude of this (6 × 6) quasi-cell, measured from AFM topographies, increases with the setpoint value of the frequency shift Δf (15-20 Hz, repulsive interaction). Excitation variations map obtained simultaneously with the AFM topography shows that larger dissipation values are measured in between the topographical bumps of the (6 × 6) quasi-cell. These results demonstrate that the AFM tip deforms the graphene monolayer. During recording in dynamic STM mode, a frequency shift (Δf) map is obtained in which Δf values range from 41 to 47 Hz (repulsive interaction). As a result, we deduced that the STM tip, also, provokes local mechanical distortions of the graphene monolayer. The origin of these tip-induced distortions is discussed in terms of electronic and mechanical properties of EG on 6H-SiC(0001).

  9. Tip induced mechanical deformation of epitaxial graphene grown on reconstructed 6H-SiC(0001) surface during scanning tunneling and atomic force microscopy studies.

    PubMed

    Meza, José Antonio Morán; Lubin, Christophe; Thoyer, François; Cousty, Jacques

    2015-01-26

    The structural and mechanical properties of an epitaxial graphene (EG) monolayer thermally grown on top of a 6H-SiC(0001) surface were studied by combined dynamic scanning tunneling microscopy (STM) and frequency modulation atomic force microscopy (FM-AFM). Experimental STM, dynamic STM and AFM images of EG on 6H-SiC(0001) show a lattice with a 1.9 nm period corresponding to the (6 × 6) quasi-cell of the SiC surface. The corrugation amplitude of this (6 × 6) quasi-cell, measured from AFM topographies, increases with the setpoint value of the frequency shift Δf (15-20 Hz, repulsive interaction). Excitation variations map obtained simultaneously with the AFM topography shows that larger dissipation values are measured in between the topographical bumps of the (6 × 6) quasi-cell. These results demonstrate that the AFM tip deforms the graphene monolayer. During recording in dynamic STM mode, a frequency shift (Δf) map is obtained in which Δf values range from 41 to 47 Hz (repulsive interaction). As a result, we deduced that the STM tip, also, provokes local mechanical distortions of the graphene monolayer. The origin of these tip-induced distortions is discussed in terms of electronic and mechanical properties of EG on 6H-SiC(0001).

  10. The correlation of epitaxial graphene properties and morphology of SiC (0001)

    SciTech Connect

    Guo, Y.; Guo, L. W. E-mail: xlchen@iphy.ac.cn; Huang, J.; Jia, Y. P.; Lin, J. J.; Lu, W.; Li, Z. L.; Yang, R.; Chen, X. L. E-mail: xlchen@iphy.ac.cn

    2014-01-28

    The electronic properties of epitaxial graphene (EG) on SiC (0001) depend sensitively on the surface morphology of SiC substrate. Here, 2–3 layers of graphene were grown on on-axis 6H-SiC with different step densities realized through controlling growth temperature and ambient pressure. We show that epitaxial graphene on SiC (0001) with low step density and straight step edge possesses fewer point defects laying mostly on step edges and higher carrier mobility. A relationship between step density and EG mobility is established. The linear scan of Raman spectra combined with the atomic force microscopy morphology images revealed that the Raman fingerprint peaks are nearly the same on terraces, but shift significantly while cross step edges, suggesting the graphene is not homogeneous in strain and carrier concentration over terraces and step edges of substrates. Thus, control morphology of epitaxial graphene on SiC (0001) is a simple and effective method to pursue optimal route for high quality graphene and will be helpful to prepare wafer sized graphene for device applications.

  11. Nqrs Data for C6H16I2N4O8 [C6H14N4O2·2(HIO3)] (Subst. No. 0932)

    NASA Astrophysics Data System (ADS)

    Chihara, H.; Nakamura, N.

    This document is part of Subvolume A `Substances Containing Ag … C10H15' of Volume 48 `Nuclear Quadrupole Resonance Spectroscopy Data' of Landolt-Börnstein - Group III `Condensed Matter'. It contains an extract of Section `3.2 Data tables' of the Chapter `3 Nuclear quadrupole resonance data' providing the NQRS data for C6H16I2N4O8 [C6H14N4O2·2(HIO3)] (Subst. No. 0932)

  12. Nqrs Data for C6H16I2N2O8 [C6H14N2O2·2(HIO3)] (Subst. No. 0931)

    NASA Astrophysics Data System (ADS)

    Chihara, H.; Nakamura, N.

    This document is part of Subvolume A `Substances Containing Ag … C10H15' of Volume 48 `Nuclear Quadrupole Resonance Spectroscopy Data' of Landolt-Börnstein - Group III `Condensed Matter'. It contains an extract of Section `3.2 Data tables' of the Chapter `3 Nuclear quadrupole resonance data' providing the NQRS data for C6H16I2N2O8 [C6H14N2O2·2(HIO3)] (Subst. No. 0931)

  13. Nqrs Data for C6H20I6N2O20 [C6H14N2O2·6(HIO3)] (Subst. No. 0939)

    NASA Astrophysics Data System (ADS)

    Chihara, H.; Nakamura, N.

    This document is part of Subvolume A `Substances Containing Ag … C10H15' of Volume 48 `Nuclear Quadrupole Resonance Spectroscopy Data' of Landolt-Börnstein - Group III `Condensed Matter'. It contains an extract of Section `3.2 Data tables' of the Chapter `3 Nuclear quadrupole resonance data' providing the NQRS data for C6H20I6N2O20 [C6H14N2O2·6(HIO3)] (Subst. No. 0939)

  14. Nqrs Data for C6H17I3N2O11 [C6H14N2O2·3(HIO3)] (Subst. No. 0933)

    NASA Astrophysics Data System (ADS)

    Chihara, H.; Nakamura, N.

    This document is part of Subvolume A `Substances Containing Ag … C10H15' of Volume 48 `Nuclear Quadrupole Resonance Spectroscopy Data' of Landolt-Börnstein - Group III `Condensed Matter'. It contains an extract of Section `3.2 Data tables' of the Chapter `3 Nuclear quadrupole resonance data' providing the NQRS data for C6H17I3N2O11 [C6H14N2O2·3(HIO3)] (Subst. No. 0933)

  15. Refractory Oxide Coatings on Sic Ceramics

    NASA Technical Reports Server (NTRS)

    Lee, Kang N.; Jacobson, Nathan S.; Miller, Robert A.

    1994-01-01

    Silicon carbide with a refractory oxide coating is potentially a very attractive ceramic system. It offers the desirable mechanical and physical properties of SiC and the environmental durability of a refractory oxide. The development of a thermal shock resistant plasma-sprayed mullite coating on SiC is discussed. The durability of the mullite/SiC in oxidizing, reducing, and molten salt environments is discussed. In general, this system exhibits better behavior than uncoated SiC. Areas for further developments are discussed.

  16. Why are [P(C6H5)4](+)N3- and [As(C6H5)4](+)N3- ionic salts and Sb(C6H5)4N3 and Bi(C6H5)4N3 covalent solids? A theoretical study provides an unexpected answer.

    PubMed

    Christe, Karl O; Haiges, Ralf; Boatz, Jerry A; Jenkins, H Donald Brooke; Garner, Edward B; Dixon, David A

    2011-04-18

    A recent crystallographic study has shown that, in the solid state, P(C(6)H(5))(4)N(3) and As(C(6)H(5))(4)N(3) have ionic [M(C(6)H(5))(4)](+)N(3)(-)-type structures, whereas Sb(C(6)H(5))(4)N(3) exists as a pentacoordinated covalent solid. Using the results from density functional theory, lattice energy (VBT) calculations, sublimation energy estimates, and Born-Fajans-Haber cycles, it is shown that the maximum coordination numbers of the central atom M, the lattice energies of the ionic solids, and the sublimation energies of the covalent solids have no or little influence on the nature of the solids. Unexpectedly, the main factor determining whether the covalent or ionic structures are energetically favored is the first ionization potential of [M(C(6)H(5))(4)]. The calculations show that at ambient temperature the ionic structure is favored for P(C(6)H(5))(4)N(3) and the covalent structures are favored for Sb(C(6)H(5))(4)N(3) and Bi(C(6)H(5))(4)N(3), while As(C(6)H(5))(4)N(3) presents a borderline case.

  17. The first potential energy surfaces for the C6H--H2 and C6H--He collisional systems and their corresponding inelastic cross sections

    NASA Astrophysics Data System (ADS)

    Walker, Kyle M.; Dumouchel, Fabien; Lique, François; Dawes, Richard

    2016-07-01

    Molecular anions have recently been detected in the interstellar and circumstellar media. Accurate modeling of their abundance requires calculations of collisional data with the most abundant species that are usually He atoms and H2 molecules. In this paper, we focus on the collisional excitation of the first observed molecular anion, C6H-, by He and H2. Theoretical calculations of collisional cross sections rely generally on ab initio interaction potential energy surfaces (PESs). Hence, we present here the first PESs for the C6H--H2 and C6H--He van der Waals systems. The ab initio energy data for the surfaces were computed at the explicitly correlated coupled cluster with single, double, and scaled perturbative triple excitations level of theory. The method of interpolating moving least squares was used to construct 4D and 2D analytical PESs from these data. Both surfaces are characterized by deep wells and large anisotropies. Analytical models of the PESs were used in scattering calculations to obtain cross sections for low-lying rotational transitions. As could have been anticipated, important differences exist between the He and H2 cross sections. Conversely, no significant differences exist between the collisions of C6H- with the two species of H2 (para- and ortho-H2). We expect that these new data will help in accurately determining the abundance of the C6H- anions in space.

  18. Kinetics of oxynitridation of 6H-SiC( 1 1 2¯ 0) and the interface structure analyzed by ion scattering and photoelectron spectroscopy

    NASA Astrophysics Data System (ADS)

    Okawa, T.; Fukuyama, R.; Hoshino, Y.; Nishimura, T.; Kido, Y.

    2007-02-01

    Clean and pre-oxidized 6H-SiC( 1 1 2¯ 0) surfaces were annealed in NO at temperatures ranging from 800 to 1000 °C under a pressure of 1 × 10 -3 Torr. The growing surface and interface structures were analyzed in situ by high-resolution medium energy ion scattering (MEIS) and photoelectron spectroscopy using synchrotron-radiation-light. The present result reveals growth of double-layered structure of SiO 2/SiO xN y on SiC for the samples annealed at 1000 °C in NO with and without pre-oxidation in O 2. Oxynitridation takes place only at SiO 2/SiC interfaces. The thickness of growing layers is saturated at ˜0.2 nm of SiO 2 and 0.3-0.4 nm of SiO xN y layers with the elemental compositions unchanged. For the samples pre-oxidized in 18O 2 followed by annealing in N 16O, the exchange reaction between 18O and 16O occurs at the surface and interface. No nitrogen removal was observed by annealing the oxy-nitrided sample in O 2 at 1000 °C and 1 × 10 -3 Torr. We also observed the C 1s, N 1s and Si 2p spectra and identified the N 1s and Si 2p components originating from Si-oxynitride layers.

  19. Amorphous and excimer laser annealed SiC films for TFT fabrication

    NASA Astrophysics Data System (ADS)

    García, B.; Estrada, M.; Albertin, K. F.; Carreño, M. N. P.; Pereyra, I.; Resendiz, L.

    2006-02-01

    The characteristics of hydrogenated amorphous silicon carbide films prepared by PECVD and crystallized by KrF UV excimer laser annealing (ELA), for different annealing conditions, are studied to determine particulate size, surface roughness, band gap and resistivity in order to apply them to TFTs fabrication. Raman spectra for ELA SiC films indicate the presence of 6H-SiC polytype together with Si and C crystallites. We also describe the fabrication process to obtain a-Si 1- xC x:H TFTs and ELA TFTs on the same wafer, comparing their output and transfer characteristics.

  20. Deep ultra violet and visible Raman spectroscopy studies of ion implanted 6H-SiC: Recrytallisation behaviour and thermal decomposition/thermal etching of the near surface region

    NASA Astrophysics Data System (ADS)

    Kuhudzai, R. J.; Malherbe, J. B.; van der Berg, N. G.; Hlatshwayo, T. T.; Odutemowo, O.; Prinsloo, L. C.; Buys, A. V.; Erasmus, R.; Wendler, E.

    2015-12-01

    The recystallisation behaviour and thermal decomposition of the near surface amorphised region of 6H-SiC have been investigated by Raman spectroscopy. 360 keV ions of iodine and silver were implanted at room temperature into wafers of 6H-SiC resulting in the amorphisation of the near surface region. Vacuum annealing of the samples was performed at 1200 °C for 5 h and then sequentially from 1200 to 1600 °C in steps of 100 °C for 30 h at each annealing temperature. Raman spectroscopy was performed using two laser wavelength excitation regimes, the 514 nm laser (visible region) and the 244 nm laser (deep ultraviolet region, DUV). Measurements in the visible region for samples annealed at 1200 °C for 5 h showed that the characteristic 6H-SiC peaks, namely, the Transverse Optical (TO) and Longitudinal Optical (LO) are similar to the virgin samples, albeit with lower intensity due to some retained defects upon recystallisation of the SiC surface region. The similarities between the virgin spectra and the annealed sample were due to the deep penetration of the 514 nm laser into 6H-SiC resulting in the signal from the bulk undamaged 6H-SiC contributing to the overall spectra. However, DUV laser excitation, which only probes the near surface region, shows that after annealing the peaks are broader and asymmetrical compared to the virgin samples. DUV Raman spectra of samples annealed at 1600 °C indicate that SiC has completely decomposed and the top surface layer is now covered by a carbon layer. However the deeper penetrating laser in the visible region showed that the extent of decomposition at 1600 °C was greater for the silver implanted samples than for the iodine implanted samples.

  1. Development of Sic Gas Sensor Systems

    NASA Technical Reports Server (NTRS)

    Hunter, G. W.; Neudeck, P. G.; Okojie, R. S.; Beheim, G. M.; Thomas, V.; Chen, L.; Lukco, D.; Liu, C. C.; Ward, B.; Makel, D.

    2002-01-01

    Silicon carbide (SiC) based gas sensors have significant potential to address the gas sensing needs of aerospace applications such as emission monitoring, fuel leak detection, and fire detection. However, in order to reach that potential, a range of technical challenges must be overcome. These challenges go beyond the development of the basic sensor itself and include the need for viable enabling technologies to make a complete gas sensor system: electrical contacts, packaging, and transfer of information from the sensor to the outside world. This paper reviews the status at NASA Glenn Research Center of SiC Schottky diode gas sensor development as well as that of enabling technologies supporting SiC gas sensor system implementation. A vision of a complete high temperature microfabricated SiC gas sensor system is proposed. In the long-term, it is believed that improvements in the SiC semiconductor material itself could have a dramatic effect on the performance of SiC gas sensor systems.

  2. Volumetric Properties of the Mixture 2,2-Dimethylbutane C6H14 + C6H14O Hexan-1-ol (VMSD1511, LB4356_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume B 'Binary Liquid Systems of Nonelectrolytes II' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture 2,2-Dimethylbutane C6H14 + C6H14O Hexan-1-ol (VMSD1511, LB4356_V)' providing data from direct measurement of low-pressure thermodynamic speed of sound at variable mole fraction and constant temperature, in the single-phase region(s).

  3. Volumetric Properties of the Mixture Butyl ethanoate C6H12O2 + C6H14O2 3-Oxaheptan-1-ol (VMSD1412, LB4315_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume C 'Binary Liquid Systems of Nonelectrolytes III' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Butyl ethanoate C6H12O2 + C6H14O2 3-Oxaheptan-1-ol (VMSD1412, LB4315_V)' providing data by calculation of isentropic compressibility from low-pressure density and thermodynamic speed of sound data at variable mole fraction and constant temperature, in the single-phase region(s).

  4. Volumetric Properties of the Mixture 2-Methylpentane C6H14 + C6H14O Hexan-1-ol (VMSD1511, LB4354_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume B 'Binary Liquid Systems of Nonelectrolytes II' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture 2-Methylpentane C6H14 + C6H14O Hexan-1-ol (VMSD1511, LB4354_V)' providing data from direct measurement of low-pressure thermodynamic speed of sound at variable mole fraction and constant temperature, in the single-phase region(s).

  5. Volumetric Properties of the Mixture 3-Methylpentane C6H14 + C6H14O Hexan-1-ol (VMSD1412, LB4359_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume B 'Binary Liquid Systems of Nonelectrolytes II' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture 3-Methylpentane C6H14 + C6H14O Hexan-1-ol (VMSD1412, LB4359_V)' providing data by calculation of isentropic compressibility from low-pressure density and thermodynamic speed of sound data at variable mole fraction and constant temperature, in the single-phase region(s).

  6. Volumetric Properties of the Mixture Butyl ethanoate C6H12O2 + C6H14O2 3-Oxaheptan-1-ol (VMSD1511, LB4138_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume C 'Binary Liquid Systems of Nonelectrolytes III' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Butyl ethanoate C6H12O2 + C6H14O2 3-Oxaheptan-1-ol (VMSD1511, LB4138_V)' providing data from direct measurement of low-pressure thermodynamic speed of sound at variable mole fraction and constant temperature, in the single-phase region(s).

  7. Volumetric Properties of the Mixture 2,2-Dimethylbutane C6H14 + C6H14O Hexan-1-ol (VMSD1412, LB4358_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume B 'Binary Liquid Systems of Nonelectrolytes II' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture 2,2-Dimethylbutane C6H14 + C6H14O Hexan-1-ol (VMSD1412, LB4358_V)' providing data by calculation of isentropic compressibility from low-pressure density and thermodynamic speed of sound data at variable mole fraction and constant temperature, in the single-phase region(s).

  8. Volumetric Properties of the Mixture 3-Methylpentane C6H14 + C6H14O Hexan-1-ol (VMSD1511, LB4355_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume B 'Binary Liquid Systems of Nonelectrolytes II' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture 3-Methylpentane C6H14 + C6H14O Hexan-1-ol (VMSD1511, LB4355_V)' providing data from direct measurement of low-pressure thermodynamic speed of sound at variable mole fraction and constant temperature, in the single-phase region(s).

  9. Volumetric Properties of the Mixture 2,3-Dimethylbutane C6H14 + C6H14O Hexan-1-ol (VMSD1412, LB4360_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume B 'Binary Liquid Systems of Nonelectrolytes II' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture 2,3-Dimethylbutane C6H14 + C6H14O Hexan-1-ol (VMSD1412, LB4360_V)' providing data by calculation of isentropic compressibility from low-pressure density and thermodynamic speed of sound data at variable mole fraction and constant temperature, in the single-phase region(s).

  10. Volumetric Properties of the Mixture 2-Methylpentane C6H14 + C6H14O Hexan-1-ol (VMSD1412, LB4361_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume B 'Binary Liquid Systems of Nonelectrolytes II' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture 2-Methylpentane C6H14 + C6H14O Hexan-1-ol (VMSD1412, LB4361_V)' providing data by calculation of isentropic compressibility from low-pressure density and thermodynamic speed of sound data at variable mole fraction and constant temperature, in the single-phase region(s).

  11. Volumetric Properties of the Mixture 2,3-Dimethylbutane C6H14 + C6H14O Hexan-1-ol (VMSD1511, LB4357_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume B 'Binary Liquid Systems of Nonelectrolytes II' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture 2,3-Dimethylbutane C6H14 + C6H14O Hexan-1-ol (VMSD1511, LB4357_V)' providing data from direct measurement of low-pressure thermodynamic speed of sound at variable mole fraction and constant temperature, in the single-phase region(s).

  12. Volumetric Properties of the Mixture Benzene C6H6 + C6H10O Cyclohexanone (VMSD1111, LB4819_V0029

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume B 'Binary Liquid Systems of Nonelectrolytes II' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Benzene C6H6 + C6H10O Cyclohexanone (VMSD1111, LB4819_V)' providing data from direct low-pressure measurement of mass density at variable mole fraction and constant temperature, in the single-phase region(s).

  13. Vapor-Liquid Equilibrium in the Mixture Cyclohexanone C6H10O + C6H12O Cyclohexanol (EVLM1111, LB5657_E)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume A 'Binary Liquid Systems of Nonelectrolytes I' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Vapor-Liquid Equilibrium in the Mixture Cyclohexanone C6H10O + C6H12O Cyclohexanol (EVLM1111, LB5657_E)' providing data from direct measurement of pressure at variable mole fraction in liquid phase and constant temperature.

  14. Heat of Mixing and Solution of Cyclohexanone C6H10O + C6H12O Cyclohexanol (HMSD1121, LB4187_H)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume A 'Binary Liquid Systems of Nonelectrolytes I' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Heat of Mixing and Solution of Cyclohexanone C6H10O + C6H12O Cyclohexanol (HMSD1121, LB4187_H)' providing data from direct calorimetric measurement of molar excess enthalpy at variable mole fraction and constant pressure and temperature.

  15. Volumetric Properties of the Mixture Benzene C6H6 + C6H10O Cyclohexanone (VMSD1511, LB4829_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume B 'Binary Liquid Systems of Nonelectrolytes II' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Benzene C6H6 + C6H10O Cyclohexanone (VMSD1511, LB4829_V)' providing data from direct measurement of low-pressure thermodynamic speed of sound at variable mole fraction and constant temperature, in the single-phase region(s).

  16. Volumetric Properties of the Mixture Benzene C6H6 + C6H10O Cyclohexanone (VMSD1212, LB4824_V)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume B 'Binary Liquid Systems of Nonelectrolytes II' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Volumetric Properties of the Mixture Benzene C6H6 + C6H10O Cyclohexanone (VMSD1212, LB4824_V)' providing data by calculation of molar excess volume from low-pressure density measurements at variable mole fraction and constant temperature.

  17. Heat of Mixing and Solution of Hexane C6H14 + C6H18OSi2 Hexamethyldisiloxane (HMSD1111, LB4099_H)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume B 'Binary Liquid Systems of Nonelectrolytes II' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Heat of Mixing and Solution of Hexane C6H14 + C6H18OSi2 Hexamethyldisiloxane (HMSD1111, LB4099_H)' providing data from direct low-pressure calorimetric measurement of molar excess enthalpy at variable mole fraction and constant temperature.

  18. Improved Method of Manufacturing SiC Devices

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S.

    2005-01-01

    . However, in MUSiC one cannot exploit the superior sensing, thermomechanical, and electrical properties of single-crystal 6H-SiC or 4H-SiC. As a complement to MUSiC, the CLASSiC five-mask process can be utilized to fabricate multiple devices in bulk single-crystal SiC of any polytype. The five-mask process makes fabrication less complex because it eliminates the need for large-area deposition and removal of sacrificial material. Other innovations in CLASSiC pertain to selective etching of indium tin oxide and aluminum in connection with multilayer metallization. One major characteristic of bulk micromachined microelectromechanical devices is the presence of three-dimensional (3D) structures. Any 3D recesses that already exist at a given step in a fabrication process usually make it difficult to apply a planar coat of photoresist for metallization and other subsequent process steps. To overcome this difficulty, the CLASSiC process includes a reversal of part of the conventional flow: Metallization is performed before the recesses are etched.

  19. Characterization of a New Organic-Cation Cyclotetraphosphate: (1,4-HOC 6H 4NH 3) 4P 4O 12· 6H 2O

    NASA Astrophysics Data System (ADS)

    Soumhi, E. H.; Saadoune, I.; Driss, A.; Jouini, T.

    1999-05-01

    The tetra(para-phenolammonium)cyclotetraphosphate hexahydrate, (1,4-HOC6H4NH3)4P4O12· 6H2O (M=864.51 g mol-1), is monoclinicP21/cwith the unit cell parametersa=9.836(2) Å,b=8.591(1) Å,c:22.769(5) Å,β=95.41(2)°. The structure of this compound can be described as a succession of inorganic and organic sheets parallel to the (001) plane. The existence of the OH and NH3groups in positionparato the organic cation leads to the cohesion of the inorganic sheets, forming a three-dimensional network.The IR spectrum of (1,4-HOC6H4NH3)4P4O12· 6H2O is reported and discussed according to the theoretical group analysis. The IR data confirm the atomic arrangement within the structure. The coupled TG-DTA thermal study shows the successive departure of four and two water molecules, confirming the hydrated character of this cyclophosphate.

  20. Knoop Hardness on the (0001) Plane of 4H and 6H SiC Single Crystals Fabricated by Physical Vapor Transport

    DTIC Science & Technology

    2014-05-01

    come off the tips of the 2.94 N indents. In an attempt to alternatively observe differences in each materials response to the indentation process ...CIO LL IMAL HRA MAIL & RECORDS MGMT 1 GOVT PRINTG OFC (PDF) A MALHOTRA 2 RUTGERS UNIVERSITY (PDF) R HABER V DOMNICH 2 JOHNS

  1. Cryogenic Performance of Trex SiC Mirror

    NASA Technical Reports Server (NTRS)

    Foss, Colby; Kane, Dave; Bray, Donald; Hadaway, James

    2005-01-01

    Low cost, high performance lightweight Silicon Carbide (Sic) mirrors provide an alternative to Beryllium mirrors. A Trex Enterprises 0.25m diameter lightweight Sic mirror using its patented Chemical Vapor Composites (CVC) technology was evaluated for its optical performance. CVC Sic is chemically pure, thermally stable, and mechanically stiff. CVC technology yields higher growth rate than that of CVD Sic. NASA has funded lightweight optical materials technology development efforts involving Sic mirrors for future space based telescope programs. As part of these efforts, a Trex Sic was measured interferometrically from room temperature to 30 degrees Kelvin. This paper will discuss the test goals, the test instrumentation, test results, and lessons learned.

  2. Characterization of Liquid Phase Sitered sic and Sic/sic Composite Materials

    NASA Astrophysics Data System (ADS)

    Lee, Moon Hee; Lee, Sang Pill; Hur, Kwan Do

    The characterization of liquid phase sintered(LPS) SiC based materials has been investigated with the analysis of microstructure and flexural strength. Especially, LPS-SiC materials were examined for the variation of test temperature and composition ratios (Al2O3,/Y2O3) of sintering additives. LPS-SiC based materials were fabricated by hot pressing(HP) associated with the liquid phase formation of sintering additives(Al2O3,Y2O3). LPS-SiCf/SiC composites were also fabricated with plane-woven(PW) Tyranno-SA fibers without an interfacial layer. LPS-SiC materials showed a dense morphology with the creation of the secondary phase like YAG. The composition ratio of sintering additives led to the variation of sintered density and flexural strength. The flexural strength of LPS-SiC materials was greatly decreased at the temperature higher than 1000°C. LPS-SiCf/SiC composites represented an average flexural strength of about 260 MPa, accompanying the catastrophic fracture behavior without any full-out phenomena.

  3. Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy

    NASA Technical Reports Server (NTRS)

    Goue, Ouloide Yannick; Raghothamachar, Balaji; Dudley, Michael; Trunek, Andrew J.; Neudeck, Philip G.; Woodworth, Andrew A.; Spry, David J.

    2014-01-01

    The performance of commercially available silicon carbide (SiC) power devices is limited due to inherently high density of screw dislocations (SD), which are necessary for maintaining polytype during boule growth and commercially viable growth rates. The NASA Glenn Research Center (GRC) has recently proposed a new bulk growth process based on axial fiber growth (parallel to the c-axis) followed by lateral expansion (perpendicular to the c-axis) for producing multi-faceted m-plane SiC boules that can potentially produce wafers with as few as one SD per wafer. In order to implement this novel growth technique, the lateral homoepitaxial growth expansion of a SiC fiber without introducing a significant number of additional defects is critical. Lateral expansion is being investigated by hot wall chemical vapor deposition (HWCVD) growth of 6H-SiC am-plane seed crystals (0.8mm x 0.5mm x 15mm) designed to replicate axially grown SiC single crystal fibers. The post-growth crystals exhibit hexagonal morphology with approximately 1500 m (1.5 mm) of total lateral expansion. Preliminary analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the growth was homoepitaxial, matching the polytype of the respective underlying region of the seed crystal. Axial and transverse sections from the as grown crystal samples were characterized in detail by a combination of SWBXT, transmission electron microscopy (TEM) and Raman spectroscopy to map defect types and distribution. X-ray diffraction analysis indicates the seed crystal contained stacking disorders and this appears to have been reproduced in the lateral growth sections. Analysis of the relative intensity for folded transverse acoustic (FTA) and optical (FTO) modes on the Raman spectra indicate the existence of stacking faults. Further, the density of stacking faults is higher in the seed than in the grown crystal. Bundles of dislocations are observed propagating from the seed in m-axis lateral directions

  4. Biomorphous SiC ceramics prepared from cork oak as precursor

    NASA Astrophysics Data System (ADS)

    Yukhymchuk, V. O.; Kiselov, V. S.; Valakh, M. Ya.; Tryus, M. P.; Skoryk, M. A.; Rozhin, A. G.; Kulinich, S. A.; Belyaev, A. E.

    2016-04-01

    Porous ceramic materials of SiC were synthesized from carbon matrices obtained via pyrolysis of natural cork as precursor. We propose a method for the fabrication of complex-shaped porous ceramic hardware consisting of separate parts prepared from natural cork. It is demonstrated that the thickness of the carbon-matrix walls can be increased through their impregnation with Bakelite phenolic glue solution followed by pyrolysis. This decreases the material's porosity and can be used as a way to modify its mechanical and thermal characteristics. Both the carbon matrices (resulted from the pyrolysis step) and the resultant SiC ceramics are shown to be pseudomorphous to the structure of initial cork. Depending on the synthesis temperature, 3C-SiC, 6H-SiC, or a mixture of these polytypes, could be obtained. By varying the mass ratio of initial carbon and silicon components, stoichiometric SiC or SiC:C:Si, SiC:C, and SiC:Si ceramics could be produced. The structure, as well as chemical and phase composition of the prepared materials were studied by means of Raman spectroscopy and scanning electron microscopy.

  5. Mechanical and electronic properties of SiC nanowires: An ab initio study

    NASA Astrophysics Data System (ADS)

    Oliveira, J. B.; Morbec, J. M.; Miwa, R. H.

    2017-03-01

    Using first-principles calculations, based on the density functional theory, we have investigated the mechanical and electronic properties of hydrogen-passivated 3C-, 2H-, 4H-, and 6H-SiC nanowires (NWs), analyzing the effects of the diameter on these properties. Our results show that the band-gap energies of the nanowires are larger than the corresponding bulk values and decrease with the increasing diameter. All nanowires investigated exhibit direct band gaps, in contrast with the indirect band gaps observed in bulk SiC. The effect of uniaxial stress on the electronic properties of SiC nanowires has also been examined, and our results reveal that the band-gap dependence on the strain is different for each nanowire polytype. In 3C-SiC nanowires, the band gaps increase (decrease) with tensile (compressive) strain. For 4H- and 6H-SiC nanowires, the influence of strain on the band gaps is more pronounced in the thicker wires. Finally, we estimated the band offsets of hypothetical NW homostructures, composed of stacking SiCNW layers with different polytypes.

  6. SiC for Space Optics

    NASA Astrophysics Data System (ADS)

    Wellman, John

    2012-01-01

    This paper describes SiC mirrors that are large, ultra-lightweight, and actively controlled, for use in space telescopes. "Advanced Hybrid Mirrors” (AHMs) utilize SiC substrates, with embedded solid-state actuators, bonded to Nanolaminate metal foil reflective surfaces. They use replication techniques for high optical quality as well as rapid, low cost manufacturing. AHMs up to 1.35m in size have been made and tested, demonstrating wavefront error to better than the visible diffraction limit. AHMs can be fabricated at production rates after the first unit delivery as fast as 48 day intervals. "Superpolished Si/SiC Active Mirrors” (SSAMs) are similar to AHMs but the SiC mirror substrates have a layer of Si deposited on them to enable direct superpolishing. SSAMs can be much larger, can operate over a wider temperature range, and are better suited to UV astronomy. To make SSAMs larger than 1.8 m, multiple substrates can be joined together, using brazing techniques. Using wavefront sensing and control technology to command the embedded solid-state actuators, final mirror figure will be set after launch. This gives the active SiC mirror the ability to correct nearly any optical error, occurring anywhere in the optical system. As a result, active SiC mirrors can be made to relaxed figure requirements, enabling optical replication, or speeding up polishing, while assuring excellent final performance. Active SiC mirrors will reduce cost, risk and schedule for future astrophysics missions. Their high control authority allows relaxation of fabrication and assembly tolerances from optical to mechanical levels, speeding I & T. They enable rapid system testing to within required performance levels, even in 1 G, lowering mission risk. They are lighter weight and more durable than glass mirrors.

  7. C60 on SiC nanomesh.

    PubMed

    Chen, Wei; Zhang, Hong Liang; Xu, Hai; Tok, Eng Soon; Loh, Kian Ping; Wee, Andrew Thye Shen

    2006-11-02

    A SiC nanomesh is used as a nanotemplate to direct the epitaxy of C60 molecules. The epitaxial growth of C60 molecules on SiC nanomesh at room temperature is investigated by in situ scanning tunneling microscopy, revealing a typical Stranski-Krastanov mode (i.e., for the first one or two monolayers, it is a layer-by-layer growth or 2-D nucleation mode; at higher thicknesses, it changes to island growth or a 3-D nucleation mode). At submonolayer (0.04 and 0.2 ML) coverage, C60 molecules tend to aggregate to form single-layer C60 islands that mainly decorate terrace edges, leaving the uncovered SiC nanomesh almost free of C60 molecules. At 1 ML C60 coverage, a complete wetting layer of hexagonally close-packed C60 molecules forms on top of the SiC nanomesh. At higher coverage from 4.5 ML onward, the C60 stacking adopts a (111) oriented face-centered-cubic (fcc) structure. Strong bright and dim molecular contrasts have been observed on the first layer of C60 molecules, which are proposed to originate from electronic effects in a single-layer C60 island or the different coupling of C60 molecules to SiC nanomesh. These STM molecular contrast patterns completely disappear on the second and all the subsequent C60 layers. It is also found that the nanomesh can be fully recovered by annealing the C60/SiC nanomesh sample at 200 degrees C for 20 min.

  8. Direct ab initio study of the C6H6 + CH3/C2H5 = C6H5 + CH4/C2H6 reactions

    NASA Astrophysics Data System (ADS)

    Mai, Tam V.-T.; Ratkiewicz, Artur; Duong, Minh v.; Huynh, Lam K.

    2016-02-01

    A kinetic study of the reactions C6H6 + CH3/C2H5 = C6H5 + CH4/C2H6 was carried out in the temperature range of 300-2500 K using high levels of electronic structure theory, namely, CCSD(T)/CBS//BH&HLYP/cc-pVDZ, and canonical variational transition state theory (CVT) with corrections for small curvature tunneling (SCT) and hindered internal rotation (HIR) treatments. It is found that variational effect is not important and both SCT and HIR corrections noticeably affect the rate constants. Being in good agreement with literature data, the calculated results provide solid basis information for the investigation of the polyaromatic hydrocarbon (PAH) + alkyl radical reaction, an important class in combustion and soot formation.

  9. Saturn V S-IC (First) Stage

    NASA Technical Reports Server (NTRS)

    2004-01-01

    This cutaway illustration shows the Saturn V S-IC (first) stage with detailed callouts of the components. The S-IC Stage is 138 feet long and 33 feet in diameter, producing 7,500,000 pounds of thrust through five F-1 engines that are powered by liquid oxygen and kerosene. Four of the engines are mounted on an outer ring and gimbal for control purposes. The fifth engine is rigidly mounted in the center. When ignited, the roar produced by the five engines equals the sound of 8,000,000 hi-fi sets.

  10. Microwave joining of SiC

    SciTech Connect

    Silberglitt, R.; Ahmad, I.; Tian, Y.L.

    1997-04-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on identification of the most effective joining methods for scale-up to large tube assemblies, including joining using SiC produced in situ from chemical precursors. During FY 1996, a new microwave applicator was designed, fabricated and tested that provides the capability for vacuum baking of the specimens and insulation and for processing under inert environment. This applicator was used to join continuous fiber-reinforced (CFCC) SiC/SiC composites using a polymer precursor to form a SiC interlayer in situ.

  11. Saturn V S-IC (First) Stage

    NASA Technical Reports Server (NTRS)

    1967-01-01

    This illustration shows a cutaway drawing with callouts of the major components for the S-IC (first) stage of the Saturn V launch vehicle. The S-IC stage is 138 feet long and 33 feet in diameter, producing more than 7,500,000 pounds of thrust through five F-1 engines powered by liquid oxygen and kerosene. Four of the engines are mounted on an outer ring and gimball for control purposes. The fifth engine is rigidly mounted in the center. When ignited, the roar produced by the five engines equals the sound of 8,000,000 hi-fi sets.

  12. Saturn V S-IC (First) Stage

    NASA Technical Reports Server (NTRS)

    1968-01-01

    This is a cutaway view of the Saturn V first stage, known as the S-IC, detailing the five F-1 engines and fuel cells. The S-IC stage is 138 feet long and 33 feet in diameter, producing more than 7,500,000 pounds of thrust through the five F-1 engines that are powered by liquid oxygen and kerosene. Four of the engines are mounted on an outer ring and gimbal for control purposes. The fifth engine is rigidly mounted in the center. When ignited, the roar produced by the five engines equals the sound of 8,000,000 hi-fi sets.

  13. SiC MEMS For Harsh Environments

    DTIC Science & Technology

    2003-12-01

    allowed for high g shock loading of a functioning SiC MEMS accelerometer , with published results [1]. 2 2 HIGH TEMPERATURE TESTING OF SiC Measuring...2800 °C, thus capable of being operated in the temperature range of 600-1000 °C [4,5]. The need for the mechanical properties (modulus) of these SiC...VOR-MELT rheometers used for mechanical modulus measurements had a solids fixture, which held both ends of a vertically oriented rectangular cross

  14. Global reaction route mapping of isomerization pathways of exotic C{sub 6}H molecular species

    SciTech Connect

    Vikas, E-mail: qlabspu@yahoo.com; Kaur, Gurpreet

    2013-12-14

    C{sub 6}H radical is known to exist in the astrophysical environment in linear form; however, it may originate from nonlinear isomeric forms. Potential energy surface of C{sub 6}H is explored to search isomers of C{sub 6}H and transition states connecting them. This work reports first-ever identification of reaction pathways for isomerization of C{sub 6}H. The reaction route search is performed through global reaction route mapping method, which utilizes an uphill walking technique based on an anharmonic downward distortion following approach to search intermediates and transition states. The computations performed at the CASSCF/aug-cc-pVTZ, CCSD(T)/6-311++G(d,p)//DFT/B3LYP/6-311++G(d,p), and DFT/B3LYP/aug-cc-pVTZ levels of the theory identified 14 isomers (including 8 new isomeric forms of C{sub 6}H) and 28 transition states. Most of the identified isomers are found to have significant multireference character. The kinetic stability and natural bond orbital analysis of the identified isomers is also investigated. The isomeric forms are further characterized using spectral analysis involving rotational constants, vibrational frequencies, and Raman scattering activities as well as analyzing the effect of isotopic substitution of hydrogen on the spectral features. This study proposes that the linear-C{sub 6}H can readily isomerize to a six-member ring isomer.

  15. Global reaction route mapping of isomerization pathways of exotic C6H molecular species

    NASA Astrophysics Data System (ADS)

    Vikas, Kaur, Gurpreet

    2013-12-01

    C6H radical is known to exist in the astrophysical environment in linear form; however, it may originate from nonlinear isomeric forms. Potential energy surface of C6H is explored to search isomers of C6H and transition states connecting them. This work reports first-ever identification of reaction pathways for isomerization of C6H. The reaction route search is performed through global reaction route mapping method, which utilizes an uphill walking technique based on an anharmonic downward distortion following approach to search intermediates and transition states. The computations performed at the CASSCF/aug-cc-pVTZ, CCSD(T)/6-311++G(d,p)//DFT/B3LYP/6-311++G(d,p), and DFT/B3LYP/aug-cc-pVTZ levels of the theory identified 14 isomers (including 8 new isomeric forms of C6H) and 28 transition states. Most of the identified isomers are found to have significant multireference character. The kinetic stability and natural bond orbital analysis of the identified isomers is also investigated. The isomeric forms are further characterized using spectral analysis involving rotational constants, vibrational frequencies, and Raman scattering activities as well as analyzing the effect of isotopic substitution of hydrogen on the spectral features. This study proposes that the linear-C6H can readily isomerize to a six-member ring isomer.

  16. Bulk Micromachined 6H-SiC High-g Piezoresistive Accelerometer Fabricated and Tested

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S.

    2002-01-01

    High-g accelerometers are needed in certain applications, such as in the study and analysis of high-g impact landings and projectiles. Also, these accelerometers must survive the high electromagnetic fields associated with the all-electric vehicle technology needed for aerospace applications. The choice of SiC is largely due to its excellent thermomechanical properties over conventional silicon-based accelerometers, whose material properties inhibit applicability in high electromagnetic radiation and high temperatures (>150 C) unless more complex and sometimes costly packaging schemes are adopted. This work was the outcome of a NASA Glenn Research Center summer internship program, in collaboration with Cornell University and the Munitions Directorate of the U.S. Air Force in Eglin, Florida. It aimed to provide the enabling technology infrastructure (modeling, fabrication, and validation) for the implementation of SiC accelerometers designed specifically for harsh environments.

  17. Bidimensional intercalation of Ge between SiC(0001) and a heteroepitaxial graphite top layer

    SciTech Connect

    Kubler, L.; Dentel, D.; Bischoff, J.-L.; Derivaz, M.; Aiet-Mansour, K.; Diani, M.

    2005-09-15

    High temperature annealing of 4H- or 6H-SiC(0001) crystals is well known to desorb Si from the surface and to generate a C-rich (6{radical}3x6{radical}3)R30 deg. (6{radical}3) reconstruction explained as a graphite monolayer in heteroepitaxial registry with the substrate. Ge deposition at room temperature and in the monolayer range on this graphitized reconstruction results in Ge islands. Using a number of surface techniques, we follow subsequent Ge morphology evolutions as a function of isochronal post-annealing treatments at increasing temperatures. In a particular temperature window Ge reacts with the substrate by diffusion under the graphite planes and wets the Si-terminated SiC surface. In spite of this bidimensional insertion of a Ge layer, the epitaxial relationship between the SiC substrate and the graphite is maintained as shown by very clear graphite-(1x1) LEED or RHEED patterns. They denote extended and well-ordered graphite planes at the surface of a graphite/Ge/SiC heterostructure. XPS analyses reveal a complete passivation of the intercalated Ge layer against oxidation by the overlying graphite sheets. Moreover, drastic spectroscopic changes on the bulk-SiC Si 2p and C 1s core levels are observed, depending on whether graphite(6{radical}3)/SiC or graphite(1x1)/Ge/SiC terminations are analyzed. In the latter case, the observed core level splitting of the bulk components is interpreted by a significant upward band bending ({approx}1.2 eV) of the n-doped SiC, making this second interface to act as a Schottky barrier. Above 1300 deg. C, a delayed Ge desorption takes place that allows the graphite sheets to re-form in their initial 6{radical}3 form, i.e., without Ge and with flatter bands.

  18. Microwave joining of SiC

    SciTech Connect

    Silberglitt, R.; Ahmad, I.; Black, W.M.

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  19. Universal Converter Using SiC

    SciTech Connect

    Dallas Marckx; Brian Ratliff; Amit Jain; Matthew Jones

    2007-01-01

    The grantee designed a high power (over 1MW) inverter for use in renewable and distributed energy systems, such as PV cells, fuel cells, variable speed wind turbines, micro turbines, variable speed gensets and various energy storage methods. The inverter uses 10,000V SiC power devices which enable the use of a straight-forward topology for medium voltage (4,160VAC) without the need to cascade devices or topologies as is done in all commercial, 4,160VAC inverters today. The use of medium voltage reduces the current by nearly an order of magnitude in all current carrying components of the energy system, thus reducing size and cost. The use of SiC not only enables medium voltage, but also the use of higher temperatures and switching frequencies, further reducing size and cost. In this project, the grantee addressed several technical issues that stand in the way of success. The two primary issues addressed are the determination of real heat losses in candidate SiC devices at elevated temperature and the development of high temperature packaging for SiC devices.

  20. Passive SiC irradiation temperature monitor

    SciTech Connect

    Youngblood, G.E.

    1996-04-01

    A new, improved passive irradiation temperature monitoring method was examined after an irradiation test at 627{degrees}C. The method is based on the analysis of thermal diffusivity changes during postirradiation annealing of polycrystalline SiC. Based on results from this test, several advantages for using this new method rather than a method based on length or lattice parameter changes are given.

  1. Development of SiC Large Tapered Crystal Growth

    NASA Technical Reports Server (NTRS)

    Neudeck, Phil

    2010-01-01

    Majority of very large potential benefits of wide band gap semiconductor power electronics have NOT been realized due in large part to high cost and high defect density of commercial wafers. Despite 20 years of development, present SiC wafer growth approach is yet to deliver majority of SiC's inherent performance and cost benefits to power systems. Commercial SiC power devices are significantly de-rated in order to function reliably due to the adverse effects of SiC crystal dislocation defects (thousands per sq cm) in the SiC wafer.

  2. Monte Carlo Simulation of Electron Transport in 4H- and 6H-SiC

    SciTech Connect

    Sun, C. C.; You, A. H.; Wong, E. K.

    2010-07-07

    The Monte Carlo (MC) simulation of electron transport properties at high electric field region in 4H- and 6H-SiC are presented. This MC model includes two non-parabolic conduction bands. Based on the material parameters, the electron scattering rates included polar optical phonon scattering, optical phonon scattering and acoustic phonon scattering are evaluated. The electron drift velocity, energy and free flight time are simulated as a function of applied electric field at an impurity concentration of 1x10{sup 18} cm{sup 3} in room temperature. The simulated drift velocity with electric field dependencies is in a good agreement with experimental results found in literature. The saturation velocities for both polytypes are close, but the scattering rates are much more pronounced for 6H-SiC. Our simulation model clearly shows complete electron transport properties in 4H- and 6H-SiC.

  3. Defect-induced magnetism in neutron irradiated 6H-SiC single crystals.

    PubMed

    Liu, Yu; Wang, Gang; Wang, Shunchong; Yang, Jianhui; Chen, Liang; Qin, Xiubo; Song, Bo; Wang, Baoyi; Chen, Xiaolong

    2011-02-25

    Defect-induced magnetism is firstly observed in neutron irradiated SiC single crystals. We demonstrated that the intentionally created defects dominated by divacancies (V(Si)V(C)) are responsible for the observed magnetism. First-principles calculations revealed that defect states favor the formation of local moments and the extended tails of defect wave functions make long-range spin couplings possible. Our results confirm the existence of defect-induced magnetism, implying the possibility of tuning the magnetism of wide band-gap semiconductors by defect engineering.

  4. Synthesis and characterization of SiC and SiC/Si3N4 composite nano powders from waste material.

    PubMed

    Zawrah, M F; Zayed, M A; Ali, Moustafa R K

    2012-08-15

    In the present work, nano silicon carbide has been prepared by pyrolysis of rice-husk ashes as starting materials. Three rice-husk ash samples having different features were used. The first was coarse-grained rice husk ash (fired husk as is), the second was fine rice husk ash (hand-ground), while the third was ball milled one. Effect of ball milling of the starting ashes for 6h on the formation of nano SiC was investigated and compared with those prepared without milling. The particle sizes of the prepared SiC materials were affected by the milling process. The particle sizes of the obtained nano SiC from ball milled staring materials were smaller than those prepared without milling. The pyrolysis conditions, i.e. the temperature and atmosphere were optimized. The optimum firing temperature to obtain well crystalline nano SiC was 1550°C. The effect of pyrolysis atmosphere, i.e. argon, vacuum and nitrogen was also demonstrated. The pyrolysis in argon exhibited lower efficiency on the formation of SiC than vacuum; while the pyrolysis in nitrogen atmosphere led to formation of SiC/Si(3)N(4) nanocomposite.

  5. Hidden Superlattice in Tl2(SC6H4S) and Tl2(SeC6H4Se) Solved from Powder X-ray Diffraction

    SciTech Connect

    K Stone; D Turner; M Singh; T Vaid; P Stephens

    2011-12-31

    The crystal structures of the isostructural title compounds poly[({mu}-benzene-1,4-dithiolato)dithallium], Tl{sub 2}(SC{sub 6}H{sub 4}S), and poly[({mu}-benzene-1,4-diselenolato)dithallium], Tl{sub 2}(SeC{sub 6}H{sub 4}Se), were solved by simulated annealing from high-resolution synchrotron X-ray powder diffraction. Rietveld refinements of an initial structure with one formula unit per triclinic cell gave satisfactory agreement with the data, but led to a structure with impossibly close non-bonded contacts. A disordered model was proposed to alleviate this problem, but an alternative supercell structure leads to slightly improved agreement with the data. The isostructural superlattice structures were confirmed for both compounds through additional data collection, with substantially better counting statistics, which revealed the presence of very weak superlattice peaks not previously seen. Overall, each structure contains Tl-S or Tl-Se two-dimensional networks, connected by phenylene bridges. The sulfur (or selenium) coordination sphere around each thallium is a highly distorted square pyramid or a 'see-saw' shape, depending upon how many Tl-S or Tl-Se interactions are considered to be bonds. In addition, the two compounds contain pairs of Tl{sup I} ions that interact through a closed-shell 'thallophilic' interaction: in the sulfur compound there are two inequivalent pairs of Tl atoms with Tl-Tl distances of 3.49 and 3.58 {angstrom}, while in the selenium compound those Tl-Tl interactions are at 3.54 and 3.63 {angstrom}.

  6. Ultralight, Strong, Three-Dimensional SiC Structures.

    PubMed

    Chabi, Sakineh; Rocha, Victoria G; García-Tuñón, Esther; Ferraro, Claudio; Saiz, Eduardo; Xia, Yongde; Zhu, Yanqiu

    2016-02-23

    Ultralight and strong three-dimensional (3D) silicon carbide (SiC) structures have been generated by the carbothermal reduction of SiO with a graphene foam (GF). The resulting SiC foams have an average height of 2 mm and density ranging between 9 and 17 mg cm(-3). They are the lightest reported SiC structures. They consist of hollow struts made from ultrathin SiC flakes and long 1D SiC nanowires growing from the trusses, edges, and defect sites between layers. AFM results revealed an average flake thickness of 2-3 nm and lateral size of 2 μm. In-situ compression tests in the scanning electron microscope (SEM) show that, compared with most of the existing lightweight foams, the present 3D SiC exhibited superior compression strengths and significant recovery after compression strains of about 70%.

  7. Structural and magnetic properties of irradiated SiC

    SciTech Connect

    Wang, Yutian; Helm, Manfred; Chen, Xuliang; Yang, Zhaorong; Li, Lin; Shalimov, Artem; Prucnal, Slawomir; Munnik, Frans; Skorupa, Wolfgang; Zhou, Shengqiang; Tong, Wei

    2014-05-07

    We present a comprehensive structural characterization of ferromagnetic SiC single crystals induced by Ne ion irradiation. The ferromagnetism has been confirmed by electron spin resonance, and possible transition metal impurities can be excluded to be the origin of the observed ferromagnetism. Using X-ray diffraction and Rutherford backscattering/channeling spectroscopy, we estimate the damage to the crystallinity of SiC, which mutually influences the ferromagnetism in SiC.

  8. Low Temperature Ohmic Contact Formation of Ni2Si on N-type 4H-SiC and 6H-SiC

    NASA Technical Reports Server (NTRS)

    Elsamadicy, A. M.; Ila, D.; Zimmerman, R.; Muntele, C.; Evelyn, L.; Muntele, I.; Poker, D. B.; Hensley, D.; Hirvonen, J. K.; Demaree, J. D.; Larkin, David (Technical Monitor)

    2001-01-01

    Nickel Silicide (Ni2Si) is investigated as possible ohmic contact to heavily nitrogen-doped N-type 4H-SiC and 6H-SiC. Nickel Silicide was deposited via electron gun with various thicknesses on both Si and C faces of the SiC substrates. The Ni2Si contacts were formed at room temperature as well as at elevated temperatures (400 to 1000 K). Contact resistivities and I-V characteristics were measured at temperatures between 100 and 700 C. To investigate the electric properties, I-V characteristics were studied and the Transmission Line Method (TLM) was used to determine the specific contact resistance for the samples at each annealing temperature. Both Rutherford Backscattering Spectroscopy (RBS) and Auger Electron Spectroscopy (AES) were used for depth profiling of the Ni2Si, Si, and C. X-ray Photoemission Spectroscopy (XPS) was used to study the chemical structure of the Ni2Si/SiC interface.

  9. SiC Power MOSFET with Improved Gate Dielectric

    SciTech Connect

    Sbrockey, Nick M; Tompa, Gary S; Spencer, Michael G; Chandrashekhar, Chandra MVS

    2010-08-23

    In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

  10. Paralinear Oxidation of CVD SiC in Water Vapor

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth J.; Hann, Raiford E., Jr.

    1997-01-01

    The oxidation kinetics of CVD SiC were monitored by thermogravimetric analysis (TGA) in a 50% H2O/50% O2 gas mixture flowing at 4.4 cm/s for temperatures between 1200 and 1400 C. Paralinear weight change kinetics were observed as the water vapor oxidized the SiC and simultaneously volatilized the silica scale. The long-term degradation rate of SiC is determined by the volatility of the silica scale. Rapid SiC surface recession rates were estimated from these data for actual aircraft engine combustor conditions.

  11. Deep level defects in sublimation-grown 6H silicon carbide investigated by DLTS and EPR

    NASA Astrophysics Data System (ADS)

    Irmscher, K.; Pintilie, I.; Pintilie, L.; Schulz, D.

    2001-12-01

    6H-SiC bulk single crystals grown by physical vapor transport (PVT) were investigated by deep-level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). One of the observed deep level defects was identified as isolated tungsten on Si sites by EPR. The electron spin of {1}/{2} could be explained by W 5+ (5d 1). This is equivalent to the single positive charge state of a double donor when taking into account the Fermi level position in the n-type samples. The interpretation is also consistent with the DLTS detection of a W related deep level which showed a behavior of the capture of electrons and holes that hints at a double donor. In addition a tantalum related deep level is tentatively discussed. W and Ta were incorporated on electrically active sites in 6H-SiC only in low concentrations (2-4×10 14 cm -3) during crystal growth by PVT.

  12. Si6H12/Polymer Inks for Electrospinning a-Si Nanowire Lithium Ion Battery Anodes

    SciTech Connect

    Schulz, Douglas L.; Hoey, Justin; Smith, Jeremiah; Elangovan, Arumugasamy; Wu, Xiangfa; Akhatov, Iskander; Payne, Scott; Moore, Jayma; Boudjouk, Philip; Pederson, Larry; Xiao, Jie; Zhang, Jiguang

    2010-08-04

    Amorphous silicon nanowires 'a-SiNWs' have been prepared by electrospinning a liquid silane-based precursor. Cyclohexasilane 'Si6H12' was admixed with poly-methyl methacrylate (PMMA) in toluene giving an ink that was electrospun into the Si6H12/PPMA wires with diameters of 50-2000 nm. Raman spectroscopy revealed that thermal treatment at 350 C transforms this deposit into a-SiNWs. These materials were coated with a thin carbon layer and then tested as half-cells where a reasonable plateau in electrochemical cycling was observed after an initial capacity fade. Additionally, porous a-SiNWs were realized when the thermally decomposable binder polypropylene carbonate/polycyclohexene carbonate was used as the polymer carrier.

  13. Photoconductive and photovoltaic response of high-dark-resistivity 6H-SiC devices

    NASA Technical Reports Server (NTRS)

    Cho, Pak S.; Goldhar, Julius; Lee, Chi H.; Saddow, Stephen E.; Neudeck, Philip

    1995-01-01

    The optoelectronic properties of high-resistivity p-type hexagonal silicon carbide (6H-SiC) have been investigated using lateral photoconductive switches. Both photovoltaic and photoconductive effects are reported, measured at 337 nm, which is above the 6H-SiC absorption edge. These photoconductive switches have been fabricated with dark resistances of up to 1 M omega; photoconductive switching efficiencies of more than 80% have been achieved. In addition, these devices displayed a high-speed photovoltaic response to nanosecond laser excitations in the ultraviolet spectral region; in particular, the observed photovoltaic response pulse width can be shorter than the exciting laser pulse width. This subnanosecond photovoltaic response has been modeled and good qualitative agreement with experiment has been obtained.

  14. Inelastic rate coefficients for collisions of C6H- with H2 and He

    NASA Astrophysics Data System (ADS)

    Walker, Kyle M.; Lique, François; Dumouchel, Fabien; Dawes, Richard

    2017-04-01

    The recent detection of anions in the interstellar medium has shown that they exist in a variety of astrophysical environments - circumstellar envelopes, cold dense molecular clouds and star-forming regions. Both radiative and collisional processes contribute to molecular excitation and de-excitation in these regions so that the 'local thermodynamic equilibrium' approximation, where collisions cause the gas to behave thermally, is not generally valid. Therefore, along with radiative coefficients, collisional excitation rate coefficients are needed to accurately model the anionic emission from these environments. We focus on the calculation of state-to-state rate coefficients of the C6H- molecule in its ground vibrational state in collisions with para-H2, ortho-H2 and He using new potential energy surfaces. Dynamical calculations for the pure rotational excitation of C6H- were performed for the first 11 rotational levels (up to j1 = 10) using the close-coupling method, while the coupled-states approximation was used to extend the H2 rate coefficients to j1 = 30, where j1 is the angular momentum quantum number of C6H-. State-to-state rate coefficients were obtained for temperatures ranging from 2 to 100 K. The rate coefficients for H2 collisions for Δj1 = -1 transitions are of the order of 10-10 cm3 s-1, a factor of 2 to 3 greater than those of He. Propensity rules are discussed. The collisional excitation rate coefficients produced here impact astrophysical modelling since they are required for obtaining accurate C6H- level populations and line emission for regions that contain anions.

  15. The low frequency dynamics of supercooled LiBr, 6H2O.

    PubMed

    Bove, L; Dreyfus, C; Polian, A; Bonello, B; Malfanti, I; Taschin, A; Torre, R; Pick, R M

    2011-01-21

    We present results of a series of experiments performed on LiBr, 6H(2)0 from room temperature down to 172 K ≈ 1.2T(g). These ultrasound, Brillouin and depolarized light scattering, and transient grating experiments show that, above 215 K, this solution behaves like supercooled water: its zero frequency sound velocity C(0) continuously decreases with decreasing temperature, and the reorientational dynamics of the water molecules can be directly detected at some temperatures of this domain. Conversely, below 215 K, a new regime sets in, where the apparent C(0) is practically temperature independent and where a β, Arrenhius like, relaxation process coexists with the usual, Vogel-Fulcher like, α relaxation process of the supercooled liquid. These results are similar to those recently obtained in LiCl, 6H(2)O. The onset of the new regime is possibly due to an increase of the interaction of the water molecules with a neighboring Li(+) ion when lowering the temperature. We also compare our results with published dielectric data on water solutions of glass forming polyalcohols. Some of them present a low temperature splitting of their relaxation time similar to what is found in LiBr, 6H(2)O.

  16. Graphitization of the 6H-SiC( 0 0 0 1 ) surface studied by HREELS

    NASA Astrophysics Data System (ADS)

    Angot, T.; Portail, M.; Forbeaux, I.; Layet, J. M.

    2002-04-01

    By using high-resolution electron energy loss spectroscopy (HREELS), we have studied the vibrational properties of the various 6H-SiC(0 0 0 1) reconstructions, from the Si-rich to the graphitized surface. The 6H-SiC(0 0 0 1)-(3×3) exhibits the Fuchs-Kliewer (FK) optical phonons commonly observed on strongly polar materials. The lowering of the energy width of the elastically reflected electrons with increasing primary energies reveals the coupling of FK with the plasmon that derives from the bulk doping level. No particular modification in the HREELS spectra is observed after preparation of the 6H-SiC(0 0 0 1)-(√3×√3) R30° surface. On the (6√3×6√3) R30° reconstructed surface, the FK phonon modes display both a blue shift and an increased damping factor. In the ultra-violet energy region we observed a loss structure at ≈6 eV whose dispersion relation allows to readily conclude on the presence of a pure graphite layer: it almost perfectly match the dispersion relation measured on highly oriented pyrolitic graphite for the so-called `π-plasmon' arising from the electronic excitation of π- π∗ interband transition.

  17. Epitaxial growth of SiC from Al?Si solution reacting with propane gas

    NASA Astrophysics Data System (ADS)

    Tanaka, A.; Ataka, T.; Ohkura, E.; Katsuno, H.

    2004-09-01

    A new low-temperature LPE technique has been developed. SiC layers were grown on a Si-face of 6H-SiC substrates from Al-Si solution reacting with propane gas at 1000°C. Morphology of the as-grown surface of the layers changed depending on whether the solution was saturated with Si or not. Based on the observation, two growth modes, corresponding to segregation dominance or surface diffusion dominance, were discussed. The use of off-axis substrates made the growth rate increase remarkably. The thickness reached about 10-μm after 8-h growth. PL measurements revealed that the polytype of the grown layers belongs to a hexagonal group.

  18. Fast Risetime Reverse Bias Pulse Failures in SiC PN Junction Diodes

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Fazi, Christian; Parsons, James D.

    1996-01-01

    SiC-based high temperature power devices are being developed for aerospace systems which will require high reliability. One behavior crucial to power device reliability. To date, it has necessarily been assumed to date is that the breakdown behavior of SiC pn junctions will be similar to highly reliable silicon-based pn junctions. Challenging this assumption, we report the observation of anomalous unreliable reverse breakdown behavior in moderately doped (2-3 x 10(exp 17) cm(exp -3)) small-area 4H- and 6H-SiC pn junction diodes at temperatures ranging from 298 K (25 C) to 873 K (600 C). We propose a mechanism in which carrier emission from un-ionized dopants and deep level defects leads to this unstable behavior. The fundamental instability mechanism is applicable to all wide bandgap semiconductors whose dopants are significantly un-ionized at typical device operating temperatures.

  19. Gas Sensing Diode Comprising SiC

    NASA Technical Reports Server (NTRS)

    Hunter, Gary William (Inventor)

    2001-01-01

    A diode for sensing hydrogen and hydrocarbons and the process for manufacturing the diode are disclosed. The diode is a Schottky diode which has a palladium chrome contact on the C-face of an n-type 6H Silicon carbide epilayer. The epilayer is grown on the C-face of a 6H silicon carbide substrate. The diode is capable of measuring low concentrations of hydrogen and hydrocarbons at high temperatures, for example, 800 degrees C. The diode is both sensitive and stable at elevated temperatures.

  20. Reactive Ion Etching of SiC in SF_6/He Plasmas

    NASA Astrophysics Data System (ADS)

    Alapati, Ramakanth; Nordheden, Karen J.

    2003-10-01

    Etch rates of greater than 400 Åmin have been achieved for 6H SiC in a Plasma Therm 790 RIE system using SF_6/He gas mixtures. Both pressure and composition are strong determining factors in optimizing the etch rate. For an rf power of 175 W, the etch rate maximizes at a pressure of 125 mTorr and a composition of 50% SF_6. Microwave measeurements indicate that the addition of helium results in an increase in the average electron density, although significant electron attachment is apparent. The electron density also exhibits a maximum at a pressure of 125 mTorr. Optical emission spectroscopy shows that the addition of helium results in increased emission of F and F_2, and these emissions also exhibit maxima at a pressure of 125 mTorr. The higher electron density and possibility of increased electron temperature, as a result of electron attachment heating, are believed to be responsible for an increase in the dissociation of SF6 which results in an enhanced SiC etch rate.

  1. Silicon vacancy center in 4 H -SiC: Electronic structure and spin-photon interfaces

    NASA Astrophysics Data System (ADS)

    Soykal, Ö. O.; Dev, Pratibha; Economou, Sophia E.

    2016-02-01

    Defects in silicon carbide are of intense and increasing interest for quantum-based applications due to this material's properties and technological maturity. We calculate the multiparticle symmetry-adapted wave functions of the negatively charged silicon vacancy defect in hexagonal silicon carbide via use of group theory and density functional theory and find the effects of spin-orbit and spin-spin interactions on these states. Although we focused on VSi- in 4 H -SiC because of its unique fine structure due to the odd number of active electrons, our methods can be easily applied to other defect centers of different polytypes, especially to the 6 H -SiC. Based on these results, we identify the mechanism that polarizes the spin under optical drive, obtain the ordering of its dark doublet states, point out a path for electric field or strain sensing, and find the theoretical value of its ground-state zero-field splitting to be 68 MHz, in good agreement with experiment. Moreover, we present two distinct protocols of a spin-photon interface based on this defect. Our results pave the way toward quantum information and quantum metrology applications with silicon carbide.

  2. Nondestructive three-dimensional observation of defects in semi-insulating 6H-SiC single-crystal wafers using a scanning laser microscope (SLM) and infrared light-scattering tomography (IR-LST)

    NASA Astrophysics Data System (ADS)

    Wutimakun, Passapong; Buteprongjit, Chumpol; Morimoto, Jun

    2009-07-01

    Peripheral and central areas of a semi-insulating 6H-SiC single-crystal wafer were examined using a scanning laser microscope (SLM) and infrared light-scattering tomography (IR-LST). The form and density of the defects in each area were observed by SLM. We reconstructed three-dimensional (3D) IR-LST images of scatterers by stacking 2D layer-by-layer IR-LST images on different planes. Using these 3D IR-LST images, variations in the defect distribution with depth were observed for the first time. To study the defect distribution and defect form in detail, we observed the defect configuration in the same volume as for 3D IR-LST images by magnified SLM and merged the images from the two techniques. Information on defects obtained using this approach will be very important in the development of high-quality semi-insulating silicon carbide (SiC) substrates.

  3. Porous silicon carbide (SiC) semiconductor device

    NASA Technical Reports Server (NTRS)

    Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

    1994-01-01

    A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing conditions. In one embodiment, the semiconductor device is a p-n junction diode in which a layer of n-type SiC is positioned on a p-type layer of SiC, with the p-type layer positioned on a layer of silicon dioxide. Because of the UV luminescent properties of the semiconducting porous SiC layer, it may also be utilized for other devices such as LEDs and optoelectronic devices.

  4. Three-dimensional crystalline SiC nanowire flowers

    NASA Astrophysics Data System (ADS)

    Ho, Ghim Wei; Weng Wong, Andrew See; Kang, Dae-Joon; Welland, Mark E.

    2004-08-01

    Several techniques have already been developed for synthesizing silicon carbide (SiC) material in the form of nanospheres and nanowires/rods. Here, we report the synthesis of a distinctly different kind of SiC nanostructure in the form of three-dimensional crystalline nanowire-based flower-like structures. Interest in such structures centres around the combination of a simple growth process based on SiC nanowire formation, with a resultant structure having potentially complex mechanical and optical properties, the latter a consequence of the wide band gap of bulk SiC. The synthesis of these SiC nanowire flowers is via a vapour-liquid-solid (VLS) process, on which a detailed study of both the chemical and structural composition has been carried out.

  5. Multihormonal regulation of thyroglobulin production by the OVNIS 6H thyroid cell line.

    PubMed

    Aouani, A; Hovsépian, S; Fayet, G

    1988-02-01

    The hormonal regulation of thyroglobulin production has been studied using a clone of the ovine thyroid cell line: OVNIS 6H. 3 among the 6 hormones proposed for serum replacement are required for an optimal thyroglobulin production; insulin, hydrocortisone and thyrotropin. Insulin alone stimulates thyroglobulin production. The presence of insulin is also required to observe hydrocortisone and TSH stimulations. Newborn calf serum inhibits thyroglobulin production. The best conditions for optimal thyroglobulin expression and TSH responsiveness are obtained in serum-free medium supplemented with 5 micrograms/ml insulin, 100 nM hydrocortisone and 1 mU/ml TSH.

  6. Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Powell, J. Anthony

    2004-01-01

    This article describes the initial discovery and development of new approaches to SiC homoepitaxial and heteroepitaxial growth. These approaches are based upon the previously unanticipated ability to effectively supress two-dimensional nucleation of 3C-SiC on large basal plane terraces that form between growth steps when epitaxy is carried out on 4H- and 6H-SiC nearly on-axis substrates. After subdividing the growth surface into mesa regions, pure stepflow homoeptixay with no terrace nucleation was then used to grow all existing surface steps off the edges of screw-dislocation-free mesas, leaving behind perfectly on-axis (0001) basal plane mesa surfaces completely free of atomic-scale steps. Step-free mesa surfaces as large as 0.4 mm x 0.4 mm were experimentally realized, with the yield and size of step-free mesas being initally limited by substrate screw dislocations. Continued epitaxial growth following step-free surface formation leads to the formation of thin lateral cantilevers that extend the step-free surface area from the top edge of the mesa sidewalls. By selecting a proper pre-growth mesa shape and crystallographic orientation, the rate of cantilever growth can be greatly enhanced in a web growth process that has been used to (1) enlarge step-free surface areas and (2) overgrow and laterally relocate micropipes and screw dislocations. A new growth process, named step-free surface heteroepitaxy, has been developed to achieve 3C-SiC films on 4H- and 6H-SiC substrate mesas completely free of double positioning boundary and stacking fault defects. The process is based upon the controlled terrace nucleation and lateral expansion of a single island of 3C-SiC across a step-free mesa surface. Experimental results indicate that substrateepilayer lattice mismatch is at least partially relieved parallel to the interface without dislocations that undesirably thread through the thickness of the epilayer. These results should enable realization of improved SiC

  7. 6H-SiC Transistor Integrated Circuits Demonstrating Prolonged Operation at 500 C

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Chang, Carl W.; Beheim, Glenn M.; Okojie, Robert S.; Evans, Laura J.; Meredith, Roger; Ferrier, Terry; Krasowski, Michael J.; Prokop, Norman F.

    2008-01-01

    The NASA Glenn Research Center is developing very high temperature semiconductor integrated circuits (ICs) for use in the hot sections of aircraft engines and for Venus exploration where ambient temperatures are well above the approximately 300 degrees Centigrade effective limit of silicon-on-insulator IC technology. In order for beneficial technology insertion to occur, such transistor ICs must be capable of prolonged operation in such harsh environments. This paper reports on the fabrication and long-term 500 degrees Centigrade operation of 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). Simple analog amplifier and digital logic gate ICs have now demonstrated thousands of hours of continuous 500 degrees Centigrade operation in oxidizing air atmosphere with minimal changes in relevant electrical parameters. Electrical characterization and modeling of transistors and circuits at temperatures from 24 degrees Centigrade to 500 degrees Centigrade is also described. Desired analog and digital IC functionality spanning this temperature range was demonstrated without changing the input signals or power supply voltages.

  8. Preparation and biodistribution of copper-67-labeled porphyrins and porphyrin-A6H immunoconjugates.

    PubMed

    Bhalgat, M K; Roberts, J C; Mercer-Smith, J A; Knotts, B D; Vessella, R L; Lavallee, D K

    1997-02-01

    The synthetic porphyrins, N-benzyl-5,10,15,20-tetrakis (4-carboxyphenyl) porphine (N-bzHTCPP) and N-4-nitrobenzyl-5-(4-carboxyphenyl)-10,15,20-tris(4-sulfophenyl) porphine (N-bzHCS3P), represent excellent radiocopper chelating agents that may find utility in antibody-mediated diagnosis and/or therapy. N-bzHCS3P was conjugated to an anti-renal cell carcinoma (RCC) antibody, A6H, and labeled with copper-67. 67CuCS3P-A6H was studied for its biodistribution in human RCC xenograft-bearing nude mice, along with the radiolabeled free porphyrins. The porphyrins resulted in tumor:blood ratios in the range of 3 to 4 after 48 h. The radiolabeled antibody achieved a tumor:blood ratio of over 16 after 45 h, indicating accumulation at the desired site. However, unwanted localization also occurred in the liver and spleen, which will have to be rectified before realizing the full potential of this approach.

  9. Study of surface exfoliation on 6H-SiC induced by H2+ implantation

    NASA Astrophysics Data System (ADS)

    Zhang, L.; Li, B. S.

    2017-03-01

    The effect of lattice damage generated by the H2+-implantation on exfoliation efficiency in 6H-SiC wafers is investigated. <0001> 6H-SiC wafers were implanted with 134 keV H2+ ions to ion fluences from 1.5×1016 to 5×1016 H2+ cm-2 and subsequently annealed at temperatures from 973 K to 1373 K. The samples were studied by a combination of optical microscopy and transmission electron microscopy. Only after 1373 K annealing for 15 min, blisters and exfoliation occur on the H2+-implanted sample surface. With increasing the implantation fluences from 1.5×1016 to 3.75×1016 H2+ cm-2, the exfoliation mean size decreases, while the exfoliation density increases. For the highest fluence of 5×1016 H2+ cm-2, seldom exfoliations occur on the sample surface. Microstructure analysis shows that exfoliation efficiency is largely controlled by the H2+-implantation-induced lattice damage. The depth of the microcrack is related to the implantation fluence. The effect of implantation fluence on dislocation loops, platelet nucleation and growth is investigated.

  10. Experimental study of resonance states in {sup 7}H and {sup 6}H

    SciTech Connect

    Caamano, M.; Mittig, W.; Savajols, H.; Demonchy, C. E.; Jurado, B.; Rejmund, F.; Rejmund, M.; Roussel-Chomaz, P.; Gillibert, A.; Obertelli, A.; Lemmon, R.; Wolski, R.

    2008-10-15

    The {sup 7}H and {sup 6}H nuclear systems were investigated via transfer reactions with a {sup 8}He beam at 15.4A MeV impinging in a {sup 12}C target. The experimental setup allowed a complete reconstruction of the reaction kinematics with the MAYA gas detector, based on the active-target concept, where the carbon atoms of the filling isobutane played also the role of reaction target. The {sup 7}H resonance was observed at 0.57{sub -0.21}{sup +0.42} MeV above the {sup 3}H+4n threshold with a width of 0.09{sub -0.06}{sup +0.94} MeV. The {sup 6}H system was formed at 2.91{sub -0.95}{sup +0.85} MeV with a resonance width of 1.52{sub -0.35}{sup +1.77} MeV. These results show the availability of nuclear structure information well outside the bounding limits, resulting in an extraordinary input to improve the present models and understanding of nuclear matter.

  11. High temperature ohmic and Schottky contacts to N-type 6H-SiC nickel

    NASA Astrophysics Data System (ADS)

    Williams, John R.; Bozack, Michael J.; Isaacs-Smith, Tamara; Luckowski, Eric D.; Meadows, Christopher; Crofton, John; McMullin, Paul G.

    1995-01-01

    We report specific contact resistances measured at elevated temperatures for Ni ohmic contacts to 6H-SiC. The specific contact resistances were measured with the linear transmission line method at both room temperature and at 773 K and yielded values <5×10-6 Ω-cm2 at both temperatures. The trend shows a decreasing contact resistance at higher temperatures. The annealed metal film is a nickel silicide with substantial mixing of C throughout the silicide layer. Also reported are the results of I-V and C-V barrier height measurements for Ni Schottky contacts to 6H-SiC. Current-voltage barrier heights as high as 1.2 eV have been measured, and the contacts show good electrical and physical stability following long-term anneals at 573 K in a vacuum ambient of 10-6 torr. These ohmic and Schottky contacts have been developed by the CCDS in collaboration with the Air Force and the Westinghouse Electric Corporation, and transfer of our contact technology to the Westinghouse Science and Technology is now complete.

  12. "Un-annealed and Annealed Pd Ultra-Thin Film on SiC Characterized by Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy"

    NASA Technical Reports Server (NTRS)

    Lu, W. J.; Shi, D. T.; Elshot, K.; Bryant, E.; Lafate, K.; Chen, H.; Burger, A.; Collins, W. E.

    1998-01-01

    Pd/SiC has been used as a hydrogen and a hydrocarbon gas sensor operated at high temperature. UHV (Ultra High Vacuum)-Scanning Tunneling Microscopy (STM), Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS) techniques were applied to study the relationship between the morphology and chemical compositions for Pd ultra-thin films on SiC (less than 30 angstroms) at different annealing temperatures. Pd ultra-thin film on 6H-SiC was prepared by the RF sputtering method. The morphology from UHV-STM and AFM shows that the Pd thin film was well deposited on SiC substrate, and the Pd was partially aggregated to round shaped participates at an annealing temperature of 300 C. At 400 C, the amount of surface participates decreases, and some strap shape participates appear. From XPS, Pd2Si was formed on the surface after annealing at 300 C, and all Pd reacted with SiC to form Pd2Si after annealing at 400 C. The intensity of the XPS Pd peak decreases enormously at 400 C. The Pd film diffused into SiC, and the Schottky barrier height has almost no changes. The work shows the Pd sicilides/SiC have the same electronic properties with Pd/SiC, and explains why the Pd/SiC sensor still responds to hydrogen at high operating temperatures.

  13. Thermal expansion of SiC at high pressure-temperature and implications for thermal convection in the deep interiors of carbide exoplanets

    NASA Astrophysics Data System (ADS)

    Nisr, C.; Meng, Y.; MacDowell, A. A.; Yan, J.; Prakapenka, V.; Shim, S.-H.

    2017-01-01

    Recent astrophysical observations have shown that some stars have sufficiently high carbon-to-oxygen ratios and may host planets composed mainly of carbides instead of silicates and oxides. From the low thermal expansion of SiC at 1 bar, it can be inferred that the buoyancy force of thermal anomalies is much lower in the carbide planets than in the silicate planets. However, numerous studies have shown that high pressure in planetary interiors can fundamentally change the physical properties of materials. We have measured the pressure-volume-temperature relations of two SiC polymorphs (3C and 6H) at pressures and temperatures up to 80 GPa and 1900 K and 65 GPa and 1920 K, respectively, in the laser-heated diamond anvil cell combined with synchrotron X-ray diffraction. We found no evidence of dissociations of these phases up to our maximum pressure condition, supporting the stability of SiC to 1900 km depth in Earth-size Si-rich carbide planets. Following the Mie-Grüneisen approach, we fit our data to the Birch-Murnaghan or the Vinet equations of state combined with the Debye approach. We found that the pressure-induced change in the thermal expansion parameter of SiC is much smaller than that of Mg silicate perovskite (bridgmanite). Our new measurements suggest that the thermal buoyancy force may be stronger in the deep interiors of Si-rich carbide exoplanets than in the "Earth-like" silicate planets.

  14. Large-scale growth of well-aligned SiC tower-like nanowire arrays and their field emission properties.

    PubMed

    Wang, Lin; Li, Chengming; Yang, Yang; Chen, Shanliang; Gao, Fengmei; Wei, Guodong; Yang, Weiyou

    2015-01-14

    Fabrication of well-aligned one-dimensional (1D) nanostrucutres is critically important and highly desired since it is the key step to realize the patterned arrays to be used as the display units. In the present work, we report the large-scale and well-aligned growth of n-type SiC nanowire arrays on the 6H-SiC wafer substrates via pyrolysis of polymeric precursors assisted by Au catalysts. The obtained n-type SiC nanowires are highly qualified with sharp tips and numerous sharp corners around the wire bodies, which bring the emitters excellent field emission (FE) performance with low turn-on fields (1.50 V/μm), low threshold fields (2.65 V/μm), and good current emission stabilities (fluctuation <3.8%). The work abilities of the n-type SiC tower-like nanowire arrays under high-temperature harsh environments have been investigated, suggesting that the resultant field emitters could be well serviced up to 500 °C. The temperature-enhanced FE behaviors could be attributed to the reduction of the work function induced by the rise of temperatures and the incorporated N dopants. It is believed that the present well-aligned n-type SiC tower-like nanowire arrays could meet nearly all stringent requirements for an ideal FE emitter with excellent FE properties, making their applications very promising in displays and other electronic nanodevices.

  15. 40 CFR 721.5560 - Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz[c...

    Code of Federal Regulations, 2014 CFR

    2014-07-01

    ... (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz oxaphosphorin-6-oxide. 721.5560 Section 721... Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz oxaphosphorin-6... identified as formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with...

  16. 40 CFR 721.5560 - Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz[c...

    Code of Federal Regulations, 2013 CFR

    2013-07-01

    ... (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz oxaphosphorin-6-oxide. 721.5560 Section 721... Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz oxaphosphorin-6... identified as formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with...

  17. 40 CFR 721.5560 - Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz[c...

    Code of Federal Regulations, 2012 CFR

    2012-07-01

    ... (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz oxaphosphorin-6-oxide. 721.5560 Section 721... Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz oxaphosphorin-6... identified as formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with...

  18. Electronic and Interfacial Properties of PD/6H-SiC Schottky Diode Gas Sensors

    NASA Technical Reports Server (NTRS)

    Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Bansal, Gaurav; Petit, Jeremy B.; Knight, Dak; Liu, Chung-Chiun; Wu, Qinghai

    1996-01-01

    Pd/SiC Schottky diodes detect hydrogen and hydrocarbons with high sensitivity. Variation of the diode temperature from 100 C to 200 C shows that the diode sensitivity to propylene is temperature dependent. Long-term heat treating at 425 C up to 140 hours is carried out to determine the effect of extended heat treating on the diode properties and gas sensitivity. The heat treating significantly affects the diode's capacitive characteristics, but the diode's current carrying characteristics are much more stable with a large response to hydrogen. Scanning Electron Microscopy and X-ray Spectrometry studies of the Pd surface after the heating show cluster formation and background regions with grain structure observed in both regions. The Pd and Si concentrations vary between grains. Auger Electron Spectroscopy depth profiles revealed that the heat treating promoted interdiffusion and reaction between the Pd and SiC dw broadened the interface region. This work shows that Pd/SiC Schottky diodes have significant potential as high temperature gas sensors, but stabilization of the structure is necessary to insure their repeatability in long-term, high temperature applications.

  19. Active Oxidation of SiC

    NASA Technical Reports Server (NTRS)

    Jacobson, Nathan S.; Myers,Dwight L.; Harder, Bryan J.

    2011-01-01

    The high temperature oxidation of silicon carbide occurs in either a passive or active mode, depending on temperature and oxygen potential. Passive oxidation forms a protective oxide film which limits attack of the SiC:SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g.) Active oxidation forms a volatile oxide and leads to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g). The transition points and rates of active oxidation are a major issue. Previous studies are reviewed and the leading theories of passive/active transitions summarized. Comparisons are made to the active/passive transitions in pure Si, which are relatively well-understood. Critical questions remain about the difference between the active-to-passive transition and passive-to-active transition. For Si, Wagner [2] points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. This suggests a significant oxygen potential difference between these two transitions and our experiments confirm this. For Si, the initial stages of active oxidation are characterized by the formation of SiO(g) and further oxidation to SiO2(s) as micron-sized rods, with a distinctive morphology. SiC shows significant differences. The active-to-passive and the passive-to-active transitions are close. The SiO2 rods only appear as the passive film breaks down. These differences are explained in terms of the reactions at the SiC/SiO2 interface. In order to understand the breakdown of the passive film, pre-oxidation experiments are conducted. These involve forming dense protective scales of 0.5, 1, and 2 microns and then subjecting the samples with these scales to a known active oxidation environment. Microstructural studies show that SiC/SiO2 interfacial reactions lead to a breakdown of the scale with a distinct morphology.

  20. Fabrication of large aperture SiC brazing mirror

    NASA Astrophysics Data System (ADS)

    Li, Ang; Wang, Peipei; Dong, Huiwen; Wang, Peng

    2016-10-01

    The SiC brazing mirror is the mirror whose blank is made by assembling together smaller SiC pieces with brazing technique. Using such kinds of joining techniques, people can manufacture large and complex SiC assemblies. The key technologies of fabricating and testing SiC brazing flat mirror especially for large aperture were studied. The SiC brazing flat mirror was ground by smart ultrasonic-milling machine, and then it was lapped by the lapping smart robot and measured by Coordinate Measuring Machine (CMM). After the PV of the surface below 4um, we did classic coarse polishing to the surface and studied the shape of the polishing tool which directly effects removal amount distribution. Finally, it was figured by the polishing smart robot and measured by Fizeau interferometer. We also studied the influence of machining path and removal functions of smart robots on the manufacturing results and discussed the use of abrasive in this process. At last, an example for fabricating and measuring a similar SiC brazing flat mirror with the aperture of 600 mm made by Shanghai Institute of Ceramics was given. The mirror blank consists of 6 SiC sectors and the surface was finally processed to a result of the Peak-to-Valley (PV) 150nm and Root Mean Square (RMS) 12nm.

  1. Compatibility of SiC and SiC Composites with Molten Lead

    SciTech Connect

    H Tunison

    2006-03-07

    The choice of structural material candidates to contain Lead at 1000 C are limited in number. Silicon carbide composites comprise one choice of possible containment materials. Short term screening studies (120 hours) were undertaken to study the behavior of Silicon Carbide, Silicon Nitride, elemental Silicon and various Silicon Carbide fiber composites focusing mainly on melt infiltrated composites. Isothermal experiments at 1000 C utilized graphite fixtures to contain the Lead and material specimens under a low oxygen partial pressure environment. The corrosion weight loss values (grams/cm{sup 2} Hr) obtained for each of the pure materials showed SiC (monolithic CVD or Hexoloy) to have the best materials compatibility with Lead at this temperature. Increased weight loss values were observed for pure Silicon Nitride and elemental Silicon. For the SiC fiber composite samples those prepared using a SiC matrix material performed better than Si{sub 3}N{sub 4} as a matrix material. Composites prepared using a silicon melt infiltration process showed larger corrosion weight loss values due to the solubility of silicon in lead at these temperatures. When excess silicon was removed from these composite samples the corrosion performance for these material improved. These screening studies were used to guide future long term exposure (both isothermal and non-isothermal) experiments and Silicon Carbide composite fabrication work.

  2. Room-temperature ferromagnetism in Cu-implanted 6H-SiC single crystal

    NASA Astrophysics Data System (ADS)

    Zheng, H. W.; Yan, Y. L.; Lv, Z. C.; Yang, S. W.; Li, X. G.; Liu, J. D.; Ye, B. J.; Peng, C. X.; Diao, C. L.; Zhang, W. F.

    2013-04-01

    200 keV Cu+ ions were implanted into 6H-SiC single crystal at room temperature with fluence of 8 × 1015 cm-2. No ferromagnetism (FM)-related secondary phase was found by the results of high-resolution x-ray diffraction and x-ray photoelectron spectroscopy. Positron annihilation lifetime spectroscopy results indicated that the main defect type was silicon vacancy and the concentration of it increased after Cu implantation. The room-temperature ferromagnetism was detected by superconducting quantum interference device. First-principles calculations revealed that the magnetic moments mainly come from the 2p orbitals of C atoms and 3d orbitals of Cu dopant. The origin of the FM has been discussed in detail.

  3. Formation of cobalt disilicide films on (3×3)6H-SiC(0001)

    NASA Astrophysics Data System (ADS)

    Platow, W.; Wood, D. K.; Tracy, K. M.; Burnette, J. E.; Nemanich, R. J.; Sayers, D. E.

    2001-03-01

    This paper presents a detailed study of thin Co films grown directly, sequentially, and by codeposition with Si on the (3×3)-R30° surface of 6H-SiC(0001). The structure, chemistry, and morphology of the films were determined using x-ray absorption fine structure, x-ray photoelectron spectroscopy, Auger electron spectroscopy, and atomic force microscopy. For directly deposited Co films (1-8 nm) graphite layers form on top of the film surface during annealing, whereas Co stays mainly unreacted over a temperature range of 300-1000 °C. The formation of CoSi2 is achieved by sequential and codeposition of Co and Si. Films annealed at 550 °C are polycrystalline and further annealing to 650 °C causes no C segregation, but there is islanding of the films. Attempts to improve film morphology and homogeneity including applying a template method and varying growth temperature are also reported.

  4. Primary photoluminescence in as-neutron (electron) -irradiated n-type 6H-SiC

    NASA Astrophysics Data System (ADS)

    Zhong, Z. Q.; Wu, D. X.; Gong, M.; Wang, O.; Shi, S. L.; Xu, S. J.; Chen, X. D.; Ling, C. C.; Fung, S.; Beling, C. D.; Brauer, G.; Anwand, W.; Skorupa, W.

    2006-05-01

    Low-temperature photoluminescence spectroscopy has revealed a series of features labeled S1, S2, S3 in n-type 6H-SiC after neutron and electron irradiation. Thermal annealing studies showed that the defects S1, S2, S3 disappeared at 500 °C. However, the well-known D1 center was only detected for annealing temperatures over 700 °C. This experimental observation not only indicated that the defects S1, S2, S3 were a set of primary defects and the D1 center was a kind of secondary defect, but also showed that the D1 center and the E1, E2 observed using deep level transient spectroscopy might not be the same type of defects arising from the same physical origin.

  5. Anomalous behaviors of E1/E2 deep level defects in 6H silicon carbide

    NASA Astrophysics Data System (ADS)

    Chen, X. D.; Ling, C. C.; Gong, M.; Fung, S.; Beling, C. D.; Brauer, G.; Anwand, W.; Skorupa, W.

    2005-01-01

    Deep level defects E1/E2 were observed in He-implanted, 0.3 and 1.7MeV electron-irradiated n-type 6H-SiC. Similar to others' results, the behaviors of E1 and E2 (like the peak intensity ratio, the annealing behaviors or the introduction rates) often varied from sample to sample. This anomalous result is not expected of E1/E2 being usually considered arising from the same defect located at the cubic and hexagonal sites respectively. The present study shows that this anomaly is due to another DLTS peak overlapping with the E1/E2. The activation energy and the capture cross section of this defect are EC-0.31eV and σ ˜8×10-14cm2, respectively.

  6. SiC Composite Turbine Vanes

    NASA Technical Reports Server (NTRS)

    Calomino, Anthony M.; Verilli, Michael J.

    2006-01-01

    Turbine inlet guide vanes have been fabricated from composites of silicon carbide fibers in silicon carbide matrices. A unique design for a cloth made from SiC fibers makes it possible to realize the geometric features necessary to form these vanes in the same airfoil shapes as those of prior metal vanes. The fiber component of each of these vanes was made from SiC-fiber cloth coated with boron nitride. The matrix was formed by chemical-vapor infiltration with SiC, then slurry-casting of SiC, followed by melt infiltration with silicon. These SiC/SiC vanes were found to be capable of withstanding temperatures 400 F (222 C) greater than those that can be withstood by nickel-base-superalloy turbine airfoils now in common use in gas turbine engines. The higher temperature capability of SiC/SiC parts is expected to make it possible to use them with significantly less cooling than is used for metallic parts, thereby enabling engines to operate more efficiently while emitting smaller amounts of NOx and CO. The SiC/SiC composite vanes were fabricated in two different configurations. Each vane of one of the configurations has two internal cavities formed by a web between the suction and the pressure sides of the vane. Each vane of the other configuration has no web (see Figure 1). It is difficult to fabricate components having small radii, like those of the trailing edges of these vanes, by use of stiff stoichiometric SiC fibers currently preferred for SiC/SiC composites. To satisfy the severe geometric and structural requirements for these vanes, the aforementioned unique cloth design, denoted by the term Y-cloth, was conceived (see Figure 2). In the regions away from the trailing edge, the Y-cloth features a fiber architecture that had been well characterized and successfully demonstrated in combustor liners. To form a sharp trailing edge (having a radius of 0.3 mm), the cloth was split into two planes during the weaving process. The fiber tows forming the trailing

  7. REVIEW ARTICLE: SiC sensors: a review

    NASA Astrophysics Data System (ADS)

    Wright, N. G.; Horsfall, A. B.

    2007-10-01

    Silicon carbide has attracted considerable attention in recent years as a potential material for sensor devices. This paper reviews the current status of SiC technology for a wide range of sensor applications. It is shown that SiC MEMs devices are well-established with operational devices demonstrated at high temperatures (up to 500 °C) for the sensing of motion, acceleration and gas flow. SiC sensors devices using electrical properties as the sensing mechanism have also been demonstrated principally for gas composition and radiation detection and have wide potential use in scientific, medical and combustion monitoring applications.

  8. Polymer precursors for SiC ceramic materials

    NASA Technical Reports Server (NTRS)

    Litt, Morton H.

    1986-01-01

    Work on precursor polymers to SiC was performed, concentrating on polymers made from decamethyl cyclohexasilyene units. The initial approach was to synthesize mixed diphenyl decamethyl cyclohexasilane, dephenylate, and polymerize. This produced polymers which had yields of up to 50 percent SiC. (Theoretical yield is 75 percent). The present approach is to make the polymer through the intermediate trans-1,4-diphenyl decamethyl cyclohexasilane. This should produce a crystalline polymer and high strength fibers. These will be thermally decomposed to SiC fibers. This requires new chemistry which is currently being studied.

  9. Bubble formation in oxide scales on SiC

    NASA Technical Reports Server (NTRS)

    Mieskowski, D. M.; Mitchell, T. E.; Heuer, A. H.

    1984-01-01

    The oxidation of alpha-SiC single crystals and sintered alphaand beta-SiC polycrystals has been investigated at elevated temperatures. Bubble formation is commonly observed in oxide scales on polycrystalline SiC, but is rarely found on single-crystal scales; bubbles result from the preferential oxidation of C inclusions, which are abundant in SiC polycrystals. The absence of bubbles on single crystals, in fact, implies that diffusion of the gaseous species formed on oxidation, CO (or possibly SiO), controls the rate of oxidation of SiC.

  10. Characteristics of Commercial SiC and Synthetic SiC as an Aggregate in Geopolymer Composites

    NASA Astrophysics Data System (ADS)

    Irfanita, R.; Afifah, K. N.; Asrianti; Subaer

    2017-03-01

    This main objective of this study is to investigate the effect silicon carbide (SiC) as an aggregate on the mechanical strength and microstructure of the geopolymer composites. The geopolymers binder were produced by using alkaline activation method of metakaolin and cured at 70oC for 2 hours. In this study commercial and synthetic SiC were used as aggregate to produce composite structure. Synthetic SiC was produced from rice husk ash and coconut shell carbon calcined at 750oC for 2 hours. The addition of SiC in geopolymers paste was varied from 0.25g, 0.50g to 0.75g to form geopolymers composites. The chemical compositions and crystallinity level of SiC and the resulting composites were measured by means of Rigaku MiniFlexII X-Ray Diffraction (XRD). The microstructure of SiC and the composites were examined by using Tescan Vega3SB Scanning Electron Microscopy (SEM). The physical and mechanical properties of the samples were determined based on apparent porosity, bulk density, and three bending flexural strength measurements. The results showed that the commercial and synthetic SiC were effectively produced geopolymers composites with different microstructure, physical and mechanical strength.

  11. Electrical characterization of 6H crystalline silicon carbide. M.S. Thesis Final Report

    NASA Technical Reports Server (NTRS)

    Lempner, Stephen E.

    1994-01-01

    Crystalline silicon carbide (SiC) substrates and epilayers, undoped as well as n- and p-doped, have been electrically characterized by performing Hall effect and resistivity measurements (van der Pauw) over the temperature range of approximately 85 K to 650 K (200 K to 500 K for p-type sample). By fitting the measured temperature dependent carrier concentration data to the single activation energy theoretical model: (1) the activation energy for the nitrogen donor ranged from 0.078 eV to 0.101 eV for a doping concentration range of 10(exp 17) cm(exp -3) to 10(exp 18) cm(exp -3) and (2) the activation energy for the aluminum acceptor was 0.252 eV for a doping concentration of 4.6 x 10(exp 18) cm(exp -3). By fitting the measured temperature dependent carrier concentration data to the double activation energy level theoretical model for the nitrogen donor: (1) the activation energy for the hexagonal site was 0.056 eV and 0.093 eV corresponding to doping concentrations of 3.33 x 10 (exp 17) cm(exp -3) and 1.6 x 10(exp 18) cm(exp -3) and (2) the activation energy for the cubic site was 0.113 and 0.126 eV corresponding to doping concentrations of 4.2 x 10(exp 17) cm(exp -3) and 5.4 x 10(exp 18) cm(exp -3).

  12. Interface-structure of the Si/SiC heterojunction grown on 6H-SiC

    SciTech Connect

    Li, L. B.; Chen, Z. M.; Zang, Y.

    2015-01-07

    The Si/SiC heterojunctions were prepared on 6H-SiC (0001) C-face by low-pressure chemical vapour deposition at 850 ∼ 1050 °C. Transmission electron microscopy and selected area electron diffraction were employed to investigate the interface-structure of Si/SiC heterojunctions. The Si/6H-SiC heterostructure of large lattice-mismatch follows domain matching epitaxy mode, which releases most of the lattice-mismatch strain, and the coherent Si epilayers can be grown on 6H-SiC. Si(1-11)/6H-SiC(0001) heterostructure is obtained at 900 °C, and the in-plane orientation relationship of Si/6H-SiC heterostructure is (1–11)[1-1-2]{sub Si}//(0001)[-2110]{sub 6H-SiC}. The Si(1-11)/6H-SiC(0001) interface has the same 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26% along both the Si[1-1-2] and Si[110] orientations. When the growth temperature increases up to 1000 °C, the 〈220〉 preferential orientation of the Si film appears. SAED patterns at the Si/6H-SiC interface show that the in-plane orientation relationship is (-220)[001]{sub Si}//(0001)[2-1-10]{sub 6H-SiC}. Along Si[110] orientation, the Si-to-SiC matching mode is still 4:5; along the vertical orientation Si[001], the Si-to-SiC mode change to approximate 1:2 and the residual mismatch is 1.84% correspondingly. The number of the atoms in one matching-period decreases with increasing residual lattice-mismatch in domain matching epitaxy and vice versa. The Si film grows epitaxially but with misfit dislocations at the interface between the Si film and the 6H-SiC substrate. And the misfit dislocation density of the Si(1-11)/6H-SiC(0001) and Si(-220)/6H-SiC(0001) obtained by experimental observations is as low as 0.487 × 10{sup 14 }cm{sup −2} and 1.217 × 10{sup 14 }cm{sup −2}, respectively, which is much smaller than the theoretical calculation results.

  13. Microwave joining of SiC ceramics and composites

    SciTech Connect

    Ahmad, I.; Silberglitt, R.; Tian, Y.L.; Katz, J.D.

    1997-04-01

    Potential applications of SiC include components for advanced turbine engines, tube assemblies for radiant burners and petrochemical processing and heat exchangers for high efficiency electric power generation systems. Reliable methods for joining SiC are required in order to cost-effectively fabricate components for these applications from commercially available shapes and sizes. This manuscript reports the results of microwave joining experiments performed using two different types of SiC materials. The first were on reaction bonded SiC, and produced joints with fracture toughness equal to or greater than that of the base material over an extended range of joining temperatures. The second were on continuous fiber-reinforced SiC/SiC composite materials, which were successfully joined with a commercial active brazing alloy, as well as by using a polymer precursor.

  14. Development of SiC Large Tapered Crystal Growth

    NASA Technical Reports Server (NTRS)

    Neudeck, Phil

    2011-01-01

    Research Focus Area: Power Electronics, Temperature Tolerant Devices. Demonstrate initial feasibility of totally new "Large Tapered Crystal" (LTC) process for growing vastly improved large-diameter wide-band gap wafers. Addresses Targets: The goal of this research is to experimentally investigate and demonstrate feasibility of the key unproven LTC growth processes in SiC. Laser-assisted growth of long SiC fiber seeds. Radial epitaxial growth enlargement of seeds into large SiC boules. Uniqueness and Impacts open a new technology path to large-diameter SiC and GaN wafers with 1000-fold defect density improvement at 2-4 fold lower cost. Leapfrog improvement in wide band gap power device capability and cost.

  15. Compensation in epitaxial cubic SiC films

    NASA Technical Reports Server (NTRS)

    Segall, B.; Alterovitz, S. A.; Haugland, E. J.; Matus, L. G.

    1986-01-01

    Hall measurements on four n-type cubic SiC films epitaxially grown by chemical vapor deposition on SiC substrates are reported. The temperature dependent carrier concentrations indicate that the samples are highly compensated. Donor ionization energies, E sub D, are less than one half the values previously reported. The values for E sub D and the donor concentration N sub D, combined with results for small bulk platelets with nitrogen donors, suggest the relation E sub D (N sub D) = E sub D(O) - alpha N sub N sup 1/3 for cubic SiC. A curve fit gives alpha is approx 2.6x10/5 meV cm and E sub D (O) approx 48 meV, which is the generally accepted value of E sub D(O) for nitrogen donors in cubic SiC.

  16. Observations of Ag diffusion in ion implanted SiC

    NASA Astrophysics Data System (ADS)

    Gerczak, Tyler J.; Leng, Bin; Sridharan, Kumar; Hunter, Jerry L.; Giordani, Andrew J.; Allen, Todd R.

    2015-06-01

    The nature and magnitude of Ag diffusion in SiC has been a topic of interest in connection with the performance of tristructural isotropic (TRISO) coated particle fuel for high temperature gas-cooled nuclear reactors. Ion implantation diffusion couples have been revisited to continue developing a more complete understanding of Ag fission product diffusion in SiC. Ion implantation diffusion couples fabricated from single crystal 4H-SiC and polycrystalline 3C-SiC substrates and exposed to 1500-1625 °C, were investigated by transmission electron microscopy and secondary ion mass spectrometry (SIMS). The high dynamic range of SIMS allowed for multiple diffusion régimes to be investigated, including enhanced diffusion by implantation-induced defects and grain boundary (GB) diffusion in undamaged SiC. Estimated diffusion coefficients suggest GB diffusion in bulk SiC does not properly describe the release observed from TRISO fuel.

  17. Observations of Ag diffusion in ion implanted SiC

    SciTech Connect

    Gerczak, Tyler J.; Leng, Bin; Sridharan, Kumar; Jerry L. Hunter, Jr.; Giordani, Andrew J.; Allen, Todd R.

    2015-03-17

    The nature and magnitude of Ag diffusion in SiC has been a topic of interest in connection with the performance of tristructural isotropic (TRISO) coated particle fuel for high temperature gas-cooled nuclear reactors. Ion implantation diffusion couples have been revisited to continue developing a more complete understanding of Ag fission product diffusion in SiC. Ion implantation diffusion couples fabricated from single crystal 4H-SiC and polycrystalline 3C-SiC substrates and exposed to 1500–1625°C, were investigated in this study by transmission electron microscopy and secondary ion mass spectrometry (SIMS). The high dynamic range of SIMS allowed for multiple diffusion régimes to be investigated, including enhanced diffusion by implantation-induced defects and grain boundary (GB) diffusion in undamaged SiC. Lastly, estimated diffusion coefficients suggest GB diffusion in bulk SiC does not properly describe the release observed from TRISO fuel.

  18. Performance Limiting Defects in SiC Based Transistors

    DTIC Science & Technology

    2006-11-01

    1 PERFORMANCE LIMITING DEFECTS IN SIC BASED TRANSISTORS P.M. Lenahan*, M.S. Dautrich, C.J. Cochrane, Pennsylvania State University University...oxide semiconductor field effect transistors (MOSFETs) and SiC based bipolar junction transistors (BJTs). The focus has been upon those defects which...of transistors (Lenahan, Jupina, 1990). SDR exploits the fact that recombination in semiconductors is spin dependent (Lepine, 1972; Kaplan et al

  19. Synthesis of micro-sized interconnected Si-C composites

    DOEpatents

    Wang, Donghai; Yi, Ran; Dai, Fang

    2016-02-23

    Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

  20. UV-induced SiC nanowire sensors

    NASA Astrophysics Data System (ADS)

    Peng, Gang; Zhou, Yingqiu; He, Yanlan; Yu, Xiaoyan; Zhang, Xue A.; Li, Gong Y.; Haick, Hossam

    2015-02-01

    Ultraviolet (UV)-induced sensors based on a single SiC nanowire (NW) were fabricated and the photoelectric properties including I-V characteristics and time response of the UV sensors were studied. SiC NWs (NWs) were prepared through pyrolyzing a polymer precursor with ferrocene as the catalyst by a CVD route. To elucidate the physical mechanism giving rise to the photoelectrical response in SiC NW sensors, three kinds of contacts between electrodes and SiC NW were prepared, i.e. Schottky contact, p-n junction contact, and Ohmic contact. The photoelectric measurements of the device with Schottky contact indicates the lowest dark current and the largest photocurrent. The results suggest that photocurrent generated at SiC NW-electrode contacts is a result of the photovoltaic effect, in which a built-in electric field accelerates photo generated charge carriers to the electronic contacts. The UV sensors based on SiC NWs could be applied in a harsh environment due to the excellent physical stability and photoelectric properties.

  1. Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 C

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Chang, Carl W.; Beheim, Glenn M.; Okojie, Robert S.; Evans, Laura J.; Meredith Roger D.; Ferrier, Terry L.; Krasowski, Michael J.; Prokop, Norman F.

    2008-01-01

    NASA has been developing very high temperature semiconductor integrated circuits for use in the hot sections of aircraft engines and for Venus exploration. This paper reports on long-term 500 C electrical operation of prototype 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). As of this writing, some devices have surpassed 4000 hours of continuous 500 C electrical operation in oxidizing air atmosphere with minimal change in relevant electrical parameters.

  2. Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures

    SciTech Connect

    Lebedev, A. A.; Zamorianskaya, M. V.; Davydov, S. Yu.; Kirilenko, D. A.; Lebedev, S. P. Sorokin, L. M.; Shustov, D. B.; Scheglov, M. P.

    2013-11-15

    Transmission electron microscopy and the cathodoluminescence method are used to study the transition region in 3C-SiC/6H-SiC heterostructures. It is shown that this region is, as a rule, constituted by alternating 3C-SiC and 6H-SiC layers with the possible inclusion of other silicon carbide polytypes. An assumption is made that this structure of the transition region can be explained in terms of the model of spinodal decomposition.

  3. Damage Accumulation and Annealing in 6H-SiC Irradiated with Si+

    SciTech Connect

    Jiang, Weilin; Weber, William J.; Thevuthasan, Suntharampillai; McCready, David E.

    1998-10-01

    Damage accumulation and annealing in 6H-silicon carbide (alpha-SiC) single crystals have been studied in situ using 2.0 MeV HeRBS in a <0001>-axial channeling geometry (RBS/C). The damage was induced by 550 keV Si ion implantation (30 degrees off normal) at a temperature of -110 degrees C, and the damage recovery was investigated by subsequent isochromal annealing (20 min) over the temperature range from -110 degrees C to 900 degrees C. At ion fluences below 7.5 X 10 13 Si/cm (0.04 dpa in the damage peak), only point defects appear to be created. Furthermore, the defects on the Si sublattice can be completely recovered by thermal annealing at room temperature (RT), and recovery of defects on the C sublattice is suggested. At higher fluences of 6.6 x 10 15 Si/cm (-90 degrees C), an amorphous layer is created from the surface to a depth of 0.6 mu-m. Because of recovery processes at the buried crystalline-amorphous interface, the apparent thickness of this amorphous layer decreases slightly (<10%) with increasing temperature over the range from -90 degrees C to 600 degrees C.

  4. Sodium dipotassium citrate, NaK2C6H5O7

    PubMed Central

    Rammohan, Alagappa; Kaduk, James A.

    2016-01-01

    The crystal structure of sodium dipotassium citrate, Na+·2K+·C6H5O7 3−, has been solved and refined using laboratory X-ray powder diffraction data, and optimized using density functional techniques. The Na+ and one of the K+ cations are six-coordinate, with bond-valence sums of 1.13 and 0.92 valence units, respectively, while another crystallographically independent K+ cation is seven-coordinate with a bond-valence sum of 1.20. The [KO6] and [KO7] polyhedra share edges and corners to form layers perpendicular to the b axis. The distorted [NaO6] octa­hedra share edges to form chains along the a axis. The result is a three-dimensional network. The only O—H⋯O hydrogen bond is an intra­molecular one between the hy­droxy group and a terminal carboxyl­ate group. PMID:27006817

  5. /SiC Composite to Titanium Alloy

    NASA Astrophysics Data System (ADS)

    Hernandez, X.; Jiménez, C.; Mergia, K.; Yialouris, P.; Messoloras, S.; Liedtke, V.; Wilhelmi, C.; Barcena, J.

    2014-08-01

    In view of aerospace applications, an innovative structure for joining a Ti alloy to carbon fiber reinforced silicon carbide has been developed. This is based on the perforation of the CMC material, and this procedure results in six-fold increase of the shear strength of the joint compared to the unprocessed CMC. The joint is manufactured using the active brazing technique and TiCuAg as filler metal. Sound joints without defects are produced and excellent wetting of both the composite ceramic and the metal is observed. The mechanical shear tests show that failure occurs always within the ceramic material and not at the joint. At the CMC/filler, Ti from the filler metal interacts with the SiC matrix to form carbides and silicides. In the middle of the filler region depletion of Ti and formation of Ag and Cu rich regions are observed. At the filler/Ti alloy interface, a layered structure of the filler and Ti alloy metallic elements is formed. For the perforation to have a significant effect on the improvement of the shear strength of the joint appropriate geometry is required.

  6. Synthesis, structural characterization and biological activity of fluorinated Schiff-bases of the type [C6H4-1-(OH)-3-(CHdbnd NArF)

    NASA Astrophysics Data System (ADS)

    Avila-Sorrosa, Alcives; Hernández-González, Jorge Ignacio; Reyes-Arellano, Alicia; Toscano, Rubén A.; Reyes-Martínez, Reyna; Roberto Pioquinto-Mendoza, J.; Morales-Morales, David

    2015-04-01

    A series of fluorinated imines of the type [C6H4-1-(OH)-3-(CHdbnd NArF)]; ArFdbnd C6H4-4-F (1), C6H3-2,3-F2 (2), C6H3-3,5-F2 (3), C6H2-2,4,6-F3 (4), C6H4-3-CF3 (5), C6H3-3,5-(CF3)2 (6), were synthesized and fully characterized including single crystal X-ray diffraction analyses of compounds [C6H4-1-(OH)-3-(CHdbnd NC6H4-4-F)] (1), [C6H4-1-(OH)-3-(CHdbnd NC6H3-3,5-F2)] (3), [C6H4-1-(OH)-3-(CHdbnd NC6H4-3-CF3)] (5). Further analyses of these results allowed the identification of the predominant non-covalent interactions and supramolecular arrangements in the solid state. Exploration of the anti-bacterial activity against both gram-positive and gram-negative bacteria showed those compounds including F or CF3 substituents at the meta positions i.e. [C6H4-1-(OH)-3-(CHdbnd NC6H3-3,5-F2)] (3), [C6H4-1-(OH)-3-(CHdbnd NC6H4-3-CF3)] (5), [C6H4-1-(OH)-3-(CHdbnd NC6H3-3,5-(CF3)2)] (6), to be the best when their activity is compared versus ampicillin.

  7. Insights into Hydrocarbon Chain and Aromatic Ring Formation in the Interstellar Medium: Computational Study of the Isomers of C4H3+ C6H3+ and C6H5+ and Their Formation Pathways

    NASA Astrophysics Data System (ADS)

    Peverati, Roberto; Bera, Partha P.; Lee, Timothy J.; Head-Gordon, Martin

    2016-10-01

    Small hydrocarbons such as acetylene is present in circumstellar envelopes of carbon-rich stars, but the processes that yield larger molecules, and eventually polycyclic aromatic hydrocarbons (PAHs), remain poorly understood. To gain additional insight into the early steps of such processes, electronic structure calculations were performed on the potential energy surfaces of {{{C}}}4{{{{H}}}3}+, {{{C}}}6{{{{H}}}3}+ and {{{C}}}6{{{{H}}}5}+. The results establish reactive pathways from acetylene and its ion to formation of the first aromatic ring. We characterize the stable isomers, their spectroscopic properties, and many of the transition structures that represent barriers to isomerization. The pathways to stabilized {{{C}}}4{{{{H}}}3}+ and {{{C}}}6{{{{H}}}3}+ are most likely to arise from unimolecular decomposition of hot {{{C}}}4{{{{H}}}4}+ and {{{C}}}6{{{{H}}}4}+ by H atom elimination. By contrast, we found an ion-molecule pathway to {{{C}}}6{{{{H}}}5}+ to be very stable to fragmentation and elimination reactions even without collisional stabilization. This aromatic species is a good nucleation center for the growth of larger PAHs in interstellar conditions.

  8. Competitive solvation of K+ by C6H6 and H2O in the K+-(C6H6)n-(H2O)m (n = 1-4; m = 1-6) aggregates

    NASA Astrophysics Data System (ADS)

    Albertí, Margarita; Lago, Noelia Faginas

    2013-04-01

    The competitive solvation of the potassium ion by benzene and water is investigated at molecular level by means of Molecular Dynamics simulations on the K+-(C6H6) n -(H2O) m ( n = 1-4; m = 1-6) ionic aggregates. The preference of K+ to bind C6H6 or H2O is investigated in the range of temperatures in which isomerisation processes are likely by adding water and benzene to the K+-(C6H6) n and K+-(H2O) m aggregates, respectively. Hydrogen bonds and the π-hydrogen bond, in spite of their weakness with respect to the K+- π and K+-H2O interactions, play an important role in stabilising different isomers, thus favouring isomerisation processes. Accordingly with experimental information it has been found that K+ bind preferably C6H6 rather than H2O and that the fragmentation of C6H6 is only observed for aggregates containing four molecules of benzene.

  9. SiC protective coating for photovoltaic retinal prosthesis

    NASA Astrophysics Data System (ADS)

    Lei, Xin; Kane, Sheryl; Cogan, Stuart; Lorach, Henri; Galambos, Ludwig; Huie, Philip; Mathieson, Keith; Kamins, Theodore; Harris, James; Palanker, Daniel

    2016-08-01

    Objective. To evaluate plasma-enhanced, chemically vapor deposited (PECVD) amorphous silicon carbide (α-SiC:H) as a protective coating for retinal prostheses and other implantable devices, and to study their failure mechanisms in vivo. Approach. Retinal prostheses were implanted in rats sub-retinally for up to 1 year. Degradation of implants was characterized by optical and scanning electron microscopy. Dissolution rates of SiC, SiN x and thermal SiO2 were measured in accelerated soaking tests in saline at 87 °C. Defects in SiC films were revealed and analyzed by selectively removing the materials underneath those defects. Main results. At 87 °C SiN x dissolved at 18.3 ± 0.3 nm d-1, while SiO2 grown at high temperature (1000 °C) dissolved at 0.104 ± 0.008 nm d-1. SiC films demonstrated the best stability, with no quantifiable change after 112 d. Defects in thin SiC films appeared primarily over complicated topography and rough surfaces. Significance. SiC coatings demonstrating no erosion in accelerated aging test for 112 d at 87 °C, equivalent to about 10 years in vivo, can offer effective protection of the implants. Photovoltaic retinal prostheses with PECVD SiC coatings exhibited effective protection from erosion during the 4 month follow-up in vivo. The optimal thickness of SiC layers is about 560 nm, as defined by anti-reflective properties and by sufficient coverage to eliminate defects.

  10. Conformational Isomerism of trans-[Pt(NH2C6H11)2I2] and the Classical Wernerian Chemistry of [Pt(NH2C6H11)4]X2 (X = Cl, Br, I)1

    PubMed Central

    Johnstone, Timothy C.; Lippard, Stephen J.

    2012-01-01

    X-ray crystallographic analysis of the compound trans-[Pt(NH2C6H11)2I2] revealed the presence of two distinct conformers within one crystal lattice. This compound was studied by variable temperature NMR spectroscopy to investigate the dynamic interconversion between these isomers. The results of this investigation were interpreted using physical (CPK) and computational (molecular mechanics and density functional theory) models. The conversion of the salts [Pt(NH2C6H11)4]X2 into trans-[Pt(NH2C6H11)2X2] (X = Cl, Br, I) was also studied and is discussed here with an emphasis on parallels to the work of Alfred Werner. PMID:23554544

  11. Surface passivation of nano-textured fluorescent SiC by atomic layer deposited TiO2

    NASA Astrophysics Data System (ADS)

    Lu, Weifang; Ou, Yiyu; Jokubavicius, Valdas; Fadil, Ahmed; Syväjärvi, Mikael; Petersen, Paul Michael; Ou, Haiyan

    2016-07-01

    Nano-textured surfaces have played a key role in optoelectronic materials to enhance the light extraction efficiency. In this work, morphology and optical properties of nano-textured SiC covered with atomic layer deposited (ALD) TiO2 were investigated. In order to obtain a high quality surface for TiO2 deposition, a three-step cleaning procedure was introduced after RIE etching. The morphology of anatase TiO2 indicates that the nano-textured substrate has a much higher surface nucleated grain density than a flat substrate at the beginning of the deposition process. The corresponding reflectance increases with TiO2 thickness due to increased surface diffuse reflection. The passivation effect of ALD TiO2 thin film on the nano-textured fluorescent 6H-SiC sample was also investigated and a PL intensity improvement of 8.05% was obtained due to the surface passivation.

  12. C6H5NH2 effect on the corrosion inhibition of aluminium in 0.5 M HCl

    NASA Astrophysics Data System (ADS)

    Omotosho, Olugbenga Adeshola; Okeniyi, Joshua Olusegun; Loto, Cleophas Akintoye; Popoola, Abimbola Patricia Idowu; Fademi, Ekundayo Oluwademilade Jacob; Oladipupo, Segun Isaac; Alabi, Ayomide Samuel; Ajibola, Omokolade Bamidele; Emelieze, Alex Nwabunor

    2017-02-01

    In this paper, C6H6NH2 (aniline) effect on the corrosion of aluminium in 0.5 M (i.e. mol/L) HCl medium was studied using gravimetric method by weight loss measurements and electrochemical technique of corrosion potential and potentiodynamic polarization by cyclic voltamery (CV) instrumentation. By these techniques, corrosion rate obtained from aluminium specimens, in 0.5 HCl test-solution having different concentrations of the hydrogen-containing C6H6NH2 chemical, were requisitely analysed. Results showed that the potentiodynamic corrosion rate excellently correlated (R = 98.94%, Nash-Sutcliffe efficiency = 97.89% and ANOVA p-value = 0.0314) with function of the gravimetric corrosion rate and C6H5NH2 concentration. Both experimental and correlated prediction models identified 0.043 mol/L C6H5NH2 with optimal inhibition efficiency performance η = 84.11% by the experimental or η = 81.15% by the predicted models. Fittings of experimental and correlated data showed the data models followed the Langmuir adsorption isotherm from which favourable adsorption and prevalent physisorption were indicated as the C6H5NH2 corrosion-protection on aluminium metal in the 0.5 M HCl medium.

  13. Influence of SiC surface polarity on the wettability and reactivity in an Al/SiC system

    NASA Astrophysics Data System (ADS)

    Shen, Ping; Wang, Yi; Ren, Lihua; Li, Shixin; Liu, Yuhua; Jiang, Qichuan

    2015-11-01

    The wetting of (0 0 0 1) 6H-SiC single crystals by molten Al was investigated using a dispensed sessile drop method in a high vacuum at 973-1173 K. The wettability and reactivity in this system are sensitive to the surface polarity of SiC. The interfacial reaction on the Si-terminated surface is rapid. The formation of a continuous Al4C3 product layer at the interface leads to an equilibrium contact angle of 56 ± 1° at 1173 K. In comparison, the interfacial reaction on the C-terminated surface is sluggish. The interface is only partially covered by discrete Al4C3 platelets even after dwelling at 1173 K for 2 h. The final wettability, however, is much better (θF = 41 ± 1°) than that of the Si-terminated surface which was covered by a dense Al4C3 layer, suggesting that the formation of Al4C3 should not always contribute to the wetting in the Al/SiC system. A plausible explanation is that the clean (i.e., deoxidized) C-terminated surface should be well wetted by molten Al in nature, owing to the strong chemical interactions between liquid Al and the surface atoms of the C-terminated SiC. It is likely that the presence of the oxide film at the surface of the molten Al drop or the SiC substrate and the rapid formation of Al4C3, which prevent the establishment of a real Al/SiC interface, conceal the intrinsic wettability of this system.

  14. X-ray fluorescence microtomography of SiC shells

    SciTech Connect

    Ice, G.E.; Chung, J.S.; Nagedolfeizi, M.

    1997-04-01

    TRISCO coated fuel particles contain a small kernel of nuclear fuel encapsulated by alternating layers of C and SiC. The TRISCO coated fuel particle is used in an advanced fuel designed for passive containment of the radioactive isotopes. The SiC layer provides the primary barrier for radioactive elements in the kernel. The effectiveness of this barrier layer under adverse conditions is critical to containment. The authors have begun the study of SiC shells from TRISCO fuel. They are using the fluorescent microprobe beamline 10.3.1. The shells under evaluation include some which have been cycled through a simulated core melt-down. The C buffer layers and nuclear kernels of the coated fuel have been removed by laser drilling through the SiC and then exposing the particle to acid. Elements of interest include Ru, Sb, Cs, Ce and Eu. The radial distribution of these elements in the SiC shells can be attributed to diffusion of elements in the kernel during the melt-down. Other elements in the shells originate during the fabrication of the TRISCO particles.

  15. Hysteresis in the Active Oxidation of SiC

    NASA Technical Reports Server (NTRS)

    Jacobson, Nathan S.; Harder, Bryan J.; Myers, Dwight L.

    2011-01-01

    Si and SiC show both passive oxidation behavior where a protective film of SiO2 forms and active oxidation behavior where a volatile suboxide SiO(g) forms. The active-to-passive and passive-to-active oxidation transitions are explored for both Si and SiC. Si shows a dramatic difference between the P(O2) for the two transitions of 10-4 bar. The active-to-passive transition is controlled by the condition for SiO2/Si equilibrium and the passive-to-active transition is controlled by the decomposition of SiO2. In the case of SiC, the P(O2) for these transitions are much closer. The active-to-passive transition appears to be controlled by the condition for SiO2/SiC equilibrium. The passive-to-active transition appears to be controlled by the interfacial reaction of SiC and SiO2 and subsequent generation of gases at the interface which leads to scale breakdown.

  16. Preflow trimethylaluminum treatment effect on GaN growth on SiC with an ultrathin interlayer

    NASA Astrophysics Data System (ADS)

    Sun, Zheng; Nagamatsu, Kentaro; Olsson, Marc; Song, Peifeng; Deki, Manato; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi

    2016-05-01

    Previously, we reported a growth method for GaN on SiC by metalorganic vapor phase epitaxy. By using a preflow trimethylaluminum treatment, the poor wetting problem of gallium on the SiC surface was alleviated, resulting in a 1.2-µm-thick crack-free GaN grown on an on-axis 6H-SiC(0001) substrate via an ultrathin AlGaN interlayer. In this study, the impact of the preflow trimethylaluminum treatment time is investigated to understand why a crack-free epilayer was realized. To demonstrate the electrical performance of devices formed by our technique, GaN/SiC vertical Schottky barrier diodes were fabricated and compared with GaN/AlN/SiC and GaN/GaN vertical Schottky barrier diodes. Compared with diodes including a high-resistance AlN interlayer, the series resistance of GaN/SiC Schottky barrier diodes incorporating the ultrathin interlayer with 5 s of TMAl treatment showed a marked reduction from 4.0 × 107 to 2.0 × 10-1 Ω·cm2. The ultrathin interlayer growth technique is expected to be applied in future GaN/SiC hybrid high-power and high-frequency devices.

  17. CONDENSED MATTER: STRUCTURE, THERMAL AND MECHANICAL PROPERTIES: SiC based Si/SiC heterojunction and its rectifying characteristics

    NASA Astrophysics Data System (ADS)

    Zhu, Feng; Chen, Zhi-Ming; Li, Lian-Bi; Zhao, Shun-Feng; Lin, Tao

    2009-11-01

    The Si on SiC heterojunction is still poorly understood, although it has a number of potential applications in electronic and optoelectronic devices, for example, light-activated SiC power switches where Si may play the role of an light absorbing layer. This paper reports on Si films heteroepitaxially grown on the Si face of (0001) n-type 6H-SiC substrates and the use of B2H6 as a dopant for p-Si grown at temperatures in a range of 700-950 °C. X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) tests have demonstrated that the samples prepared at the temperatures ranged from 850 °C to 900 °C are characterized as monocrystalline silicon. The rocking XRD curves show a well symmetry with FWHM of 0.4339° Omega. Twin crystals and stacking faults observed in the epitaxial layers might be responsible for widening of the rocking curves. Dependence of the crystal structure and surface topography on growth temperature is discussed based on the experimental results. The energy band structure and rectifying characteristics of the Si/SiC heterojunctions are also preliminarily tested.

  18. Nucleation Mechanism of 6H-SiC Polytype Inclusions Inside 15R-SiC Crystals

    SciTech Connect

    Zhang, Y.; Zhang, L.; Chen, H.; Choi, G.; Raghothamachar, B.; Dudley, M.; Edgar, J.H.; Grasza, K.; Tymicki, E.; Su, D.; Zhu, Y.

    2010-06-01

    A model is presented for the nucleation mechanism of 6H-SiC polytype inclusions inside 15R-SiC boules. Inhomogeneous densities of screw dislocations lead to uneven growth rates, resulting in complex step overgrowth processes which can partially suppress the Burgers vector of a 15R 1c screw dislocation through the creation of Frank faults and Frank partial dislocations. Combined with stacking shifts induced by the passage of basal plane partial dislocations, it is shown that the partial Burgers vector suppression can leave behind a residual 6H 1c dislocation, which then acts as a nucleus for reproduction of 6H-SiC structure in the 15R-SiC crystal.

  19. Optical spectroscopy of ZnSiF6·6H2O:Mn4+ red phosphor

    NASA Astrophysics Data System (ADS)

    Hoshino, Ryosuke; Adachi, Sadao

    2013-12-01

    We report on a method of synthesizing Mn4+-activated ZnSiF6.6H2O hydrate phosphor by the chemical reaction in a Teflon beaker. The structural and optical properties of ZnSiF6.6H2O:Mn4+ are investigated using x-ray diffraction measurement, photoluminescence (PL) analysis, PL excitation spectroscopy, diffuse reflectance measurement, and Raman scattering spectroscopy. The synthesized phosphor exhibits a series of sharp red emission peaks at ˜630 nm, which is characteristic for Mn4+ ions. The luminescent study is focused on the thermal quenching phenomenon above ˜300 K and is found to be caused by thermal decomposition of the ZnSiF6.6H2O host. Degradation in the PL intensity under near-UV light illumination has also been observed to occur in this phosphor.

  20. 1,1'-Fc(4-C6H4CO2Et)2 and its unusual salt derivative with Z' = 5, catena-[Na+]2[1,1'-Fc(4-C6H4CO2-)2].0.6H2O [1,1'-Fc = (eta5-(C5H4)2Fe].

    PubMed

    Gallagher, John F; Alley, Steven; Brosnan, Marianne; Lough, Alan J

    2010-04-01

    The neutral diethyl 4,4'-(ferrocene-1,1'-diyl)dibenzoate, Fe[eta(5)-(C(5)H(4))(4-C(6)H(4)CO(2)Et)](2) (I), yields (II) (following base hydrolysis) as the unusual complex salt poly[disodium bis[diethyl 4,4'-(ferrocene-1,1'-diyl)dibenzoate] 0.6-hydrate] or [Na(+)](2)[Fe{eta(5)-(C(5)H(4))-4-C(6)H(4)CO(2)(-)}(2)].0.6H(2)O with Z' = 5. Compound (I) crystallizes in the triclinic system, space group P1, with two molecules having similar geometry in the asymmetric unit (Z' = 2). The salt complex (II) crystallizes in the orthorhombic system, space group Pbca, with the asymmetric unit comprising poly[decasodium pentakis[diethyl 4,4'-(ferrocene-1,1'-diyl)dibenzoate] trihydrate] or [Na(+)](10)[Fe{eta(5)-(C(5)H(4))-4-C(6)H(4)CO(2)(-)}(2)](5).3H(2)O. The five independent 1,1'-Fc[(4-C(6)H(4)CO(2))(-)](2) dianions stack in an offset ladder (stepped) arrangement with the ten benzoates mutually oriented cisoid towards and bonded to a central layer comprising the ten Na(+) ions and three water molecules [1,1'-Fc = eta(5)-(C(5)H(4))(2)Fe]. The five dianions differ in the cisoid orientations of their pendant benzoate groups, with four having their -C(6)H(4)- groups mutually oriented at interplanar angles from 0.6 (3) to 3.2 (3) degrees (as pi...pi stacked C(6) rings) and interacting principally with Na(+) ions. The fifth dianion is distorted and opens up to an unprecedented -C(6)H(4)- interplanar angle of 18.6 (3) degrees through bending of the two 4-C(6)H(4)CO(2) groups and with several ionic interactions involving the three water molecules (arranged as one-dimensional zigzag chains in the lattice). Overall packing comprises two-dimensional layers of Na(+) cations coordinated mainly by the carboxylate O atoms, and one-dimensional water chains. The non-polar Fc(C(6)H(4))(2) groups are arranged perpendicular to the layers and mutually interlock through a series of efficient C-H...pi stacking contacts in a herringbone fashion to produce an overall segregation of polar and non

  1. Synthesis, structural and magnetic characterisation of the fully fluorinated compound 6H-BaFeO{sub 2}F

    SciTech Connect

    Clemens, Oliver; Wright, Adrian J.; Berry, Frank J.; Smith, Ronald I.; Slater, Peter R.

    2013-02-15

    The compound 6H-BaFeO{sub 2}F (P6{sub 3}/mmc) was synthesised by the low temperature fluorination of 6H-BaFeO{sub 3-d} using polyvinylidenedifluoride (PVDF) as a fluorination agent. Structural characterisation by XRD and NPD suggests that the local positions of the oxygen and fluorine atoms vary with no evidence for ordering on the anion sites. This compound shows antiferromagnetic ordering at room temperature with antiparallel alignment of the magnetic moments along the c-axis. The use of PVDF also allows the possibility of tuning the fluorine content in materials of composition 6H-BaFeO{sub 3-d}F{sub y} to any value of 06H-BaFeO{sub 2}F. Highlights: Black-Right-Pointing-Pointer The crystal structure of the hexagonal perovskite phase 6H-BaFeO{sub 2}F. Black-Right-Pointing-Pointer H-BaFeO{sub 2}F and 6H-BaFeO{sub 3-d}F{sub y} were prepared via low temperature fluorination using PVDF. Black-Right-Pointing-Pointer A structural investigation of the compounds BaFeO{sub 2}F is presented in detail. Black-Right-Pointing-Pointer This analysis suggests differences for the local coordination of O{sup 2-} and F{sup -} anions. Black-Right-Pointing-Pointer H-BaFeO{sub 2}F shows antiferromagnetic ordering at 300 K. Black-Right-Pointing-Pointer The magnetic moments align parallel to the a-axis.

  2. Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy

    SciTech Connect

    Jing, Qiang; Wu, Guoguang; Zhang, Yuantao; Gao, Fubin; Cai, Xupu; Zhao, Yang; Li, Wancheng Du, Guotong

    2014-08-11

    The valence band offset (VBO) of InN/6H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be −0.10 ± 0.23 eV and the conduction band offset is deduced to be −2.47 ± 0.23 eV, indicating that the heterojunction has a type-II band alignment. The accurate determination of the valence and conduction band offsets is important for applications and analysis of InN/6H-SiC optoelectronic devices.

  3. Chemical reactivity of SiC fibre-reinforced SiC with beryllium and lithium ceramic breeder materials

    NASA Astrophysics Data System (ADS)

    Kleykamp, H.

    2000-12-01

    SiC fibre-reinforced SiC fabrics (f-SiC/SiC) are considered for structural materials of advanced fusion blanket concepts. Priority tasks are compatibility studies of SiC with Li breeder ceramics and the Be neutron multiplier. Isothermal and anisothermal powder reactions by DTA up to 1220°C were examined between Li 4SiO 4, Li 2ZrO 3 and Li 2TiO 3, respectively, and SiC and SiC/SiO 2 mixtures, respectively. The SiC/SiO 2 mixture simulated the chemical state of Nicalon fibres. Solid state reactions between SiC and Be pellets were studied by capsule experiments. The reaction products Be 2C and Si were observed between the initial phases after annealing at 800°C and 900°C. A parabolic time law with a chemical diffusion coefficient D˜=2.6×10 -15 m 2/s of Be in the products was deduced at 900°C. Additional oxygen released from SiO 2 as a component of the simulated fibres oxidised the reaction products via the gas phase by formation of a Be 2SiO 4 layer. All reactions are kinetically hindered below 700°C.

  4. Selective epitaxial growth of graphene on SiC

    NASA Astrophysics Data System (ADS)

    Camara, N.; Rius, G.; Huntzinger, J.-R.; Tiberj, A.; Mestres, N.; Godignon, P.; Camassel, J.

    2008-09-01

    We present a method of selective epitaxial growth of few layers graphene (FLG) on a "prepatterned" silicon carbide (SiC) substrate. The methods involves, successively, the sputtering of a thin aluminium nitride (AlN) layer on top of a monocrystalline SiC substrate and, then, patterning it with e-beam lithography and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at ˜1582cm-1 in the AlN-free areas is used to validate the concept. It gives absolute evidence of selective FLG growth.

  5. Selective epitaxial growth of graphene on SiC

    SciTech Connect

    Camara, N.; Rius, G.; Godignon, P.; Huntzinger, J.-R.; Tiberj, A.; Camassel, J.

    2008-09-22

    We present a method of selective epitaxial growth of few layers graphene (FLG) on a ''prepatterned'' silicon carbide (SiC) substrate. The methods involves, successively, the sputtering of a thin aluminium nitride (AlN) layer on top of a monocrystalline SiC substrate and, then, patterning it with e-beam lithography and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at {approx}1582 cm{sup -1} in the AlN-free areas is used to validate the concept. It gives absolute evidence of selective FLG growth.

  6. SIC-POVMS and MUBS: Geometrical Relationships in Prime Dimension

    SciTech Connect

    Appleby, D. M.

    2009-03-10

    The paper concerns Weyl-Heisenberg covariant SIC-POVMs (symmetric informationally complete positive operator valued measures) and full sets of MUBs (mutually unbiased bases) in prime dimension. When represented as vectors in generalized Bloch space a SIC-POVM forms a d{sup 2}-1 dimensional regular simplex (d being the Hilbert space dimension). By contrast, the generalized Bloch vectors representing a full set of MUBs form d+1 mutually orthogonal d-1 dimensional regular simplices. In this paper we show that, in the Weyl-Heisenberg case, there are some simple geometrical relationships between the single SIC-POVM simplex and the d+1 MUB simplices. We go on to give geometrical interpretations of the minimum uncertainty states introduced by Wootters and Sussman, and by Appleby, Dang and Fuchs, and of the fiduciality condition given by Appleby, Dang and Fuchs.

  7. SiC IR emitter design for thermophotovoltaic generators

    NASA Astrophysics Data System (ADS)

    Fraas, Lewis M.; Ferguson, Luke; McCoy, Larry G.; Pernisz, Udo C.

    1996-02-01

    An improved ceramic spine disc burner/emitter for use in a thermophotovoltaic (TPV) generator is described. A columnar infrared (IR) emitter consisting of a stack of silicon carbide (SiC) spine discs provides for both high conductance for the combustion gases and efficient heat transfer from the hot combustion gases to the emitter. Herein, we describe the design, fabrication, and testing of this SiC burner as well as the characterization of the IR spectrum it emits. We note that when the SiC column is surrounded with fused silica heat shields, these heat shields suppress the emitted power beyond 4 microns. Thus, a TPV generator using GaSb photovoltaic cells covered by simple dielectric filters can convert over 30% of the emitted IR radiation to DC electric power.

  8. Advanced SiC composites for fusion applications

    SciTech Connect

    Snead, L.L.; Schwarz, O.J.

    1995-04-01

    This is a short review of the motivation for and progress in the development of ceramic matrix composites for fusion. Chemically vapor infiltrated silicon carbide (SiC) composites have been fabricated from continuous fibers of either SiC or graphite and tested for strength and thermal conductivity. Of significance is the the Hi-Nicalon{trademark} SiC based fiber composite has superior unirradiated properties as compared to the standard Nicalon grade. Based on previous results on the stability of the Hi-Nicalon fiber, this system should prove more resistant to neutron irradiation. A graphite fiber composite has been fabricated with very good mechnical properties and thermal conductivity an order of magnitude higher than typical SiC/SiC composites.

  9. Deposition of hydroxyapatite on SiC nanotubes in simulated body fluid.

    PubMed

    Taguchi, Tomitsugu; Miyazaki, Toshiki; Iikubo, Satoshi; Yamaguchi, Kenji

    2014-01-01

    SiC nanotubes can become candidate reinforcement materials for dental and orthopedic implants due to their light weight and excellent mechanical properties. However, the development of bioactive SiC materials has not been reported. In this study, hydroxyapatites were found on SiC nanotubes treated with NaOH and subsequently HCl solution after soaking in simulated body fluid. On the other hand, hydroxyapatites did not deposit on as-received SiC nanotubes, the SiC nanotubes with NH4OH solution treatment and SiC bulk materials with NaOH and subsequently HCl solution treatment. Therefore, we succeeded in the development of bioactive SiC nanotubes by downsizing SiC materials to nanometer size and treating with NaOH and subsequently HCl solutions for the first time.

  10. Study of the K2Ni(SO4)2 • 6H2O-K2Co(SO4)2 • 6H2O-H2O diagram and determination of the conditions for growing K2(Ni,Co)(SO4)2 • 6H2O mixed crystals

    NASA Astrophysics Data System (ADS)

    Zhokhov, A. A.; Masalov, V. M.; Zverkova, I. I.; Emelchenko, G. A.; Manomenova, V. L.; Rudneva, E. B.; Vasilieva, N. A.; Voloshin, A. E.

    2016-11-01

    The phase diagram of the K2Ni(SO4)2 · 6H2O-K2Co(SO4)2 · 6H2O-H2O ternary system is investigated in the temperature range of 30-70°C, and a relationship between the compositions of the equilibrium phases of the K2Co x Ni(1- x)(SO4)2 · 6H2O (KCNSH) solid solution and the growth solution is established. It is shown how the salt compositions of the liquid and solid phases change during crystal growth upon slow cooling of solution. A dependence of the lattice parameters of the KCNSH solid solution on the concentration of isomorphic components is experimentally found.

  11. Development of CVD Mullite Coatings for SiC Fibers

    SciTech Connect

    Sarin, V.K.; Varadarajan, S.

    2000-03-15

    A process for depositing CVD mullite coatings on SiC fibers for enhanced oxidation and corrosion, and/or act as an interfacial protective barrier has been developed. Process optimization via systematic investigation of system parameters yielded uniform crystalline mullite coatings on SiC fibers. Structural characterization has allowed for tailoring of coating structure and therefore properties. High temperature oxidation/corrosion testing of the optimized coatings has shown that the coatings remain adherent and protective for extended periods. However, preliminary tests of coated fibers showed considerable degradation in tensile strength.

  12. Saturn V S-IC (First Stage) Structural Arrangement

    NASA Technical Reports Server (NTRS)

    1968-01-01

    This illustration, with callouts, shows the structural arrangement of the major components for the S-IC (first) stage of the Saturn V launch vehicle. The S-IC stage was 138 feet long and 33 feet in diameter, and produced more than 7,500,000 pounds of thrust through five F-1 engines that were powered by liquid oxygen and kerosene. Four of the engines were mounted on an outer ring and gimbal for control purposes. The fifth engine was rigidly mounted in the center. When ignited, the roar produced by the five engines equaled the sound of 8,000,000 hi-fi sets.

  13. Damage Profiles and Ion Distribution in Pt-irradiated SiC

    SciTech Connect

    Xue, Haizhou; Zhang, Yanwen; Zhu, Zihua; Zhang, Weiming; Bae, Dr. In-Tae; Weber, William J

    2012-01-01

    Single crystalline 6H-SiC samples were irradiated at 150 K using 2MeV Pt ions. Local volume swelling is determined by electron energy loss spectroscopy (EELS), a nearly sigmoidal dependence with irradiation dose is observed. The disorder profiles and ion distribution are determined by Rutherford backscattering spectrometry (RBS), transmission electron microscopy and secondary ion mass spectrum. Since the volume swelling reaches 12% over the damage region under high ion fluence, lattice expansion is considered and corrected during the data analysis of RBS spectra to obtain depth profiles. Projectile and damage profiles are estimated by SRIM (Stopping and Range of Ions in Matter). Comparing with the measured profiles, SRIM code significantly overestimates the electronic stopping power for the slow heavy Pt ions, and large derivations are observed in the predicted ion distribution and the damage profiles. Utilizing the reciprocity method that is based on the invariance of the inelastic excitation in ion atom collisions against interchange of projectile and target, much lower electronic stopping is deduced. A simple approach based on reducing the density of SiC target in SRIM simulation is proposed to compensate the overestimated SRIM electronic stopping power values. Better damage profile and ion range are predicted.

  14. Damage Profiles and Ion Distribution in Pt-irradiated SiC

    SciTech Connect

    Xue, Haizhou; Zhang, Yanwen; Zhu, Zihua; Zhang, Weiming; Bae, In-Tae; Weber, William J.

    2012-09-01

    Single crystalline 6H-SiC samples were irradiated at 150 K with 2 MeV Pt ions. The local volume swelling was determined by electron energy loss spectroscopy (EELS), and a nearly sigmoidal dependence on irradiation dose is observed. The disorder profiles and ion distribution were determined by Rutherford backscattering spectrometry (RBS), transmission electron microscopy, and secondary ion mass spectrometry. Since the volume swelling reaches 12% over the damage region at high ion fluence, the effect of lattice expansion is considered and corrected for in the analysis of RBS spectra to obtain depth profiles. Projectile and damage profiles are estimated by SRIM (Stopping and Range of Ions in Matter).When compared with the measured profiles, the SRIM code predictions of ion distribution and the damage profiles are underestimated due to significant overestimation of the electronic stopping power for the slow heavy Pt ions. By utilizing the reciprocity method, which is based on the invariance of the inelastic energy loss in ion-solid collisions against interchange of projectile and target atom, a much lower electronic stopping power is deduced. A simple approach, based on reducing the density of SiC target in SRIM simulation, is proposed to compensate the overestimated SRIM electronic stopping power values, which results in improved agreement between predicted and measured damage profiles and ion ranges.

  15. Identification and transcriptional profile of multiple genes in the posterior kidney of Nile tilapia at 6h post bacterial infections

    Technology Transfer Automated Retrieval System (TEKTRAN)

    To understand the molecular mechanisms involved in response of Nile tilapia (Oreochromis niloticus) to bacterial infection, suppression subtractive cDNA hybridization technique was used to identify upregulated genes in the posterior kidney of Nile tilapia at 6h post infection with Aeromonas hydrophi...

  16. Time-course of cerebral perfusion and tissue oxygenation in the first 6 h after experimental subarachnoid hemorrhage in rats.

    PubMed

    Westermaier, Thomas; Jauss, Alina; Eriskat, Jörg; Kunze, Ekkehard; Roosen, Klaus

    2009-04-01

    Present knowledge about hemodynamic and metabolic changes after subarachnoid hemorrhage (SAH) originates from neuromonitoring usually starting with aneurysm surgery and animal studies that have been focusing on the first 1 to 3 h after SAH. Most patients, however, are referred to treatment several hours after the insult. We examined the course of hemodynamic parameters, cerebral blood flow, and tissue oxygenation (ptiO2) in the first 6 h after experimental SAH. Sixteen Sprague-Dawley rats were subjected to SAH using the endovascular filament model or served as controls (n=8). Bilateral local cortical blood flow, intracranial pressure, cerebral perfusion pressure, and ptiO2 were followed for 6 h after SAH. After induction of SAH, local cortical blood flow rapidly declined to 22% of baseline and returned to 80% after 6 h. The decline of local cortical blood flow markedly exceeded the decline of cerebral perfusion pressure. ptiO2 declined to 57%, recovered after 2 h, and reached > or =140% of baseline after 6 h. Acute vasoconstriction after SAH is indicated by the marked discrepancy of cerebral perfusion pressure and local cortical blood flow. The excess tissue oxygenation several hours after SAH suggests disturbed oxygen utilization and cerebral metabolic depression. Aside from the sudden increase of intracranial pressure at the time of hemorrhage and delayed cerebral vasospasm, the occurrence of acute vasoconstriction and disturbed oxygen utilization may be additional factors contributing to secondary brain damage after SAH.

  17. Reaction of 6H-6-oxo-3(5)-halogenoanthra(1,9-cd)isoxazoles with inorganic nucleophiles

    SciTech Connect

    Gornostaev, L.M.; Zeibert, G.F.

    1986-11-20

    The reaction of 6H-6-oxo-3(5)-halogenoanthral(1,9-cd)isoxazoles with sodium azide in DMFA and also the potassium fluoride in acetonitrile in the presence of crown ethers leads to nucleophilic substitution of the halogen by the azide and fluoride ion respectively.

  18. Laboratory submillimeter transition frequencies of Li-7H and Li-6H. [used for abundance investigations in red giant stars

    NASA Technical Reports Server (NTRS)

    Plummer, G. M.; Herbst, E.; De Lucia, F. C.

    1984-01-01

    The fundamental (J = 1 - 0) rotational transition frequencies of Li-7H and Li-6H in their ground (v = 0) vibrational states and of Li-7H in its first excited (v = 1) vibrational state have been measured in the laboratory. Use of these transition frequencies should permit astronomical investigations of LiH abundances in red giant stars of high lithium abundance.

  19. 40 CFR 721.5560 - Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz[c...

    Code of Federal Regulations, 2011 CFR

    2011-07-01

    ... 40 Protection of Environment 31 2011-07-01 2011-07-01 false Formaldehyde, polymer with... Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz oxaphosphorin-6... identified as formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with...

  20. 40 CFR 721.5560 - Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz[c...

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... 40 Protection of Environment 30 2010-07-01 2010-07-01 false Formaldehyde, polymer with... Formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with 6H-dibenz oxaphosphorin-6... identified as formaldehyde, polymer with (chloromethyl) oxirane and phenol, reaction products with...

  1. The Commercialization of the SiC Flame Sensor

    NASA Astrophysics Data System (ADS)

    Fedison, Jeffrey B.

    2002-03-01

    The technical and scientific steps required to produce large quantities of SiC flame sensors is described. The technical challenges required to understand, fabricate, test and package SiC photodiodes in 1990 were numerous since SiC device know how was embryonic. A sense of urgency for a timely replacement of the Geiger Muller gas discharge tube soon entered the scene. New dual fuel GE Power Systems gas turbines, which were designed to lean burn either natural gas or oil for low NOx emissions required a much higher sensitivity sensor. Joint work between GE CRD and Cree Research sponsored by the GE Aircraft Engine Division developed the know how for the fabrication of high sensitivity, high yield, reliable SiC photodiodes. Yield issues were uncovered and overcome. The urgency for system insertion required that SiC diode and sensor circuitry development needed to be carried out simultaneously with power plant field tests of laboratory or prototype sensor assemblies. The sensor and reliability specifications were stringent since the sensors installed on power plant turbine combustor walls are subjected to high levels of vibration, elevated temperatures, and high pressures. Furthermore a fast recovery time was required to sense flame out in spite of the fact that the amplifier circuit needed have high gain and high dynamic range. SiC diode technical difficulties were encountered and overcome. The science of hydrocarbon flames will also be described together with the fortunate overlap of the strong OH emission band with the SiC photodiode sensitivity versus wavelength characteristic. The extremely low dark current (<1pA/cm^2) afforded by the wide band gap and the 3eV sensitivity cutoff at 400nm made if possible to produce low amplifier offsets, high sensitivity and high dynamic range along with immunity to black body radiation from combustor walls. Field tests at power plants that had experienced turbine tripping, whenever oil fuel and/or oil with steam injection for

  2. Synthesis, spectra, and theoretical investigations of the triarylamines based on 6H-indolo[2,3-b]quinoxaline.

    PubMed

    Thomas, K R Justin; Tyagi, Payal

    2010-12-03

    Triarylamines containing a 6H-indolo[2,3-b]quinoxaline core and aromatic units such as phenyl, naphthyl, pyrene, anthracene, or fluorene have been synthesized by employing palladium-catalyzed C-N and C-C coupling reactions and characterized by optical absorption and emission spectra, electrochemical behavior, and thermal studies. Even though the electronic absorption spectra of the compounds were influenced by the nature of the peripheral amines, the emission spectra indicated close similarity for the excited states in these compounds. For the derivatives in which the amines were directly anchored on the 6H-indolo[2,3-b]quinoxaline nucleus, the emission appeared to be dominated by the state localized on the 6H-indolo[2,3-b]quinoxaline chromophore, while in the compounds containing the extended conjugation the fluorescence originated from the polyaromatic linker. The compounds displayed green or yellow emission depending on the nature of the amine segment. All of the dyes displayed one-electron quasi-reversible oxidation couple in the cyclic voltammograms, which is attributable to the oxidation of the peripheral amines at the 6H-indolo[2,3-b]quinoxaline core. An additional one-electron oxidation process observable at the high positive potentials for the compounds 7 and 8 probably arises from the oxidation of the arylthiophene segment. The enhanced thermal stability and relatively higher glass transition temperatures observed for these compounds were attributed to the presence of dipolar 6H-indolo[2,3-b]quinoxaline segment. The origin of the optical spectra and the trends observed therein were rationalized using TDDFT simulations.

  3. Spectroscopic Ellipsometry, Auger and STM Characterization of Epitaxial Graphene grown on 6H-SiC (0001)

    NASA Astrophysics Data System (ADS)

    Nelson, Florence; Diebold, Alain C.; Sandin, Andreas; Dougherty, Dan; Aspnes, Dave; Rowe, Jack

    2012-02-01

    Graphene grown by the thermal decomposition of SiC has become of interest to the semiconductor industry due to its unique, high-mobility electronic structure. The growth is of a more scalable nature when compared to exfoliated flakes produced from the ``scotch tape'' method. The resulting film rests on a ``buffer layer'' separating the graphene from the underlying substrate, which is thought to consist of a mixture of sp^2 and non-sp^2 bonding due to the sp^3 bonding of the SiC substrate. The mobilities of the graphene layer have previously been shown to differ from that of the interface layer. We investigate the difference in the optical response of the two layers using Spectroscopic Ellipsometry and find a red-shift of the ˜4.5 eV absorbance found in graphene due to the exciton-domianted transition at the M point of the Brilloun Zone. The structural characterization of the films are performed through Auger and STM on substrates which were cleaned by CMP and chemical etching methods prior to the epitaxial growth in UHV.

  4. Saturn V Stage I (S-IC) Overview

    NASA Technical Reports Server (NTRS)

    Interbartolo, Michael

    2009-01-01

    Objectives include: a) Become familiar with the Saturn V Stage I (S-IC) major structural components: Forward Skirt, Oxidizer Tank, Intertank, Fuel Tank, and Thrust Structure. b) Gain a general understanding of the Stage I subsystems: Fuel, Oxidizer, Instrumentation, Flight Control, Environmental Control, Electrical, Control Pressure, and Ordinance.

  5. Passivation of SiC device surfaces by aluminum oxide

    NASA Astrophysics Data System (ADS)

    Hallén, A.; Usman, M.; Suvanam, S.; Henkel, C.; Martin, D.; Linnarsson, M. K.

    2014-03-01

    A steady improvement in material quality and process technology has made electronic silicon carbide devices commercially available. Both rectifying and switched devices can today be purchased from several vendors. This successful SiC development over the last 25 years can also be utilized for other types of devices, such as light emitting and photovoltaic devices, however, there are still critical problems related to material properties and reliability that need to be addressed. This contribution will focus on surface passivation of SiC devices. This issue is of utmost importance for further development of SiC MOSFETs, which so far has been limited by reliability and low charge carrier surface mobilities. Also bipolar devices, such as BJTs, LEDs, or PV devices will benefit from more efficient and reliable surface passivation techniques in order to maintain long charge carrier lifetimes. Silicon carbide material enables the devices to operate at higher electric fields, higher temperatures and in more radiation dense applications than silicon devices. To be able to utilize the full potential of the SiC material, it is therefore necessary to develop passivation layers that can sustain these more demanding operation conditions. In this presentation it will also be shown that passivation layers of Al2O3 deposited by atomic layer deposition have shown superior radiation hardness properties compared to traditional SiO2-based passivation layers.

  6. Observations of Ag diffusion in ion implanted SiC

    DOE PAGES

    Gerczak, Tyler J.; Leng, Bin; Sridharan, Kumar; ...

    2015-03-17

    The nature and magnitude of Ag diffusion in SiC has been a topic of interest in connection with the performance of tristructural isotropic (TRISO) coated particle fuel for high temperature gas-cooled nuclear reactors. Ion implantation diffusion couples have been revisited to continue developing a more complete understanding of Ag fission product diffusion in SiC. Ion implantation diffusion couples fabricated from single crystal 4H-SiC and polycrystalline 3C-SiC substrates and exposed to 1500–1625°C, were investigated in this study by transmission electron microscopy and secondary ion mass spectrometry (SIMS). The high dynamic range of SIMS allowed for multiple diffusion régimes to be investigated,more » including enhanced diffusion by implantation-induced defects and grain boundary (GB) diffusion in undamaged SiC. Lastly, estimated diffusion coefficients suggest GB diffusion in bulk SiC does not properly describe the release observed from TRISO fuel.« less

  7. Towards SiC Surface Functionalization: An Ab Initio Study

    SciTech Connect

    Cicero, G; Catellani, A

    2005-01-28

    We present a microscopic model of the interaction and adsorption mechanism of simple organic molecules on SiC surfaces as obtained from ab initio molecular dynamics simulations. Our results open the way to functionalization of silicon carbide, a leading candidate material for bio-compatible devices.

  8. First principle identification of SiC monolayer as an efficient catalyst for CO oxidation

    SciTech Connect

    Sinthika, S. E-mail: sinthika90@gmail.com; Thapa, Ranjit E-mail: sinthika90@gmail.com; Reddy, C. Prakash

    2015-06-24

    Using density functional theory, we investigated the electronic properties of SiC monolayer and tested its catalytic activity toward CO oxidation. The planar nature of a SiC monolayer is found to stable and is a high band gap semiconductor. CO interacts physically with SiC surface, whereas O{sub 2} is adsorbed with moderate binding. CO oxidation on SiC monolayer prefers the Eley Rideal mechanism over the Langmuir Hinshelwood mechanism, with an easily surmountable activation barrier during CO{sub 2} formation. Overall metal free SiC monolayer can be used as efficient catalyst for CO oxidation.

  9. PhySIC: a veto supertree method with desirable properties.

    PubMed

    Ranwez, Vincent; Berry, Vincent; Criscuolo, Alexis; Fabre, Pierre-Henri; Guillemot, Sylvain; Scornavacca, Celine; Douzery, Emmanuel J P

    2007-10-01

    This paper focuses on veto supertree methods; i.e., methods that aim at producing a conservative synthesis of the relationships agreed upon by all source trees. We propose desirable properties that a supertree should satisfy in this framework, namely the non-contradiction property (PC) and the induction property (PI). The former requires that the supertree does not contain relationships that contradict one or a combination of the source topologies, whereas the latter requires that all topological information contained in the supertree is present in a source tree or collectively induced by several source trees. We provide simple examples to illustrate their relevance and that allow a comparison with previously advocated properties. We show that these properties can be checked in polynomial time for any given rooted supertree. Moreover, we introduce the PhySIC method (PHYlogenetic Signal with Induction and non-Contradiction). For k input trees spanning a set of n taxa, this method produces a supertree that satisfies the above-mentioned properties in O(kn(3) + n(4)) computing time. The polytomies of the produced supertree are also tagged by labels indicating areas of conflict as well as those with insufficient overlap. As a whole, PhySIC enables the user to quickly summarize consensual information of a set of trees and localize groups of taxa for which the data require consolidation. Lastly, we illustrate the behaviour of PhySIC on primate data sets of various sizes, and propose a supertree covering 95% of all primate extant genera. The PhySIC algorithm is available at http://atgc.lirmm.fr/cgi-bin/PhySIC.

  10. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo shows the progress of the S-IC test stand as of November 20, 1963.

  11. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photograph, taken May 7, 1963, gives a close look at the four concrete tower legs of the S-IC test stand at their completed height.

  12. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo shows the progress of the S-IC test stand as of October 22, 1963. Spherical liquid hydrogen tanks can be seen to the left. Just to the lower front of those are the cylindrical liquid oxygen (LOX) tanks.

  13. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photograph taken February 25, 1963, gives a close up look at two of the ever-growing four towers of the S-IC Test Stand.

  14. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo shows the progress of the S-IC test stand as of October 10, 1963. Kerosene storage tanks can be seen to the left.

  15. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photograph taken March 29, 1963, gives a close up look at two of the ever-growing four towers of the S-IC Test Stand.

  16. Construction Progress of the S-IC Test Stand Towers

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photograph, taken April 4, 1963, gives a close up look at the ever-growing four towers of the S-IC Test Stand.

  17. Construction Progress of S-IC Test Stand Towers

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photograph taken April 17, 1963, gives a look at the four tower legs of the S-IC test stand at their completed height.

  18. Construction Progress of the S-IC Test Stand Tower

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photograph, taken from ground level on May 7, 1963, gives a close look at one of the four towers legs of the S-IC test stand nearing its completed height.

  19. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo shows the progress of the S-IC test stand as of October 10, 1963. Spherical liquid hydrogen tanks can be seen to the left.

  20. On the existence of Si-C double bonded graphene-like layers

    NASA Astrophysics Data System (ADS)

    Huda, Muhammad N.; Yan, Yanfa; Al-Jassim, Mowafak M.

    2009-09-01

    Upon analyzing an earlier experimental study by density-functional theory we have shown that graphene-like SiC layers can exist. We found that, for a particular stacking sequence, Si dbnd C double bond was responsible for the much larger interlayer distances observed in synthesized multi-walled SiC nanotubes. The Si/C ratios in SiC layers determine the extent of interlayer distances and bonding nature. It has been also shown that for some intermediate ratios of Si:C and/or with other stacking sequences, a collapse of SiC layers to tetrahedrally bonded system is possible. We have argued that these synthesized Si dbnd C double-bonded multi-wall silicon-carbide nanotubes may provide a pathway for future realization of SiC graphene-like materials.

  1. Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

    NASA Astrophysics Data System (ADS)

    Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; Snead, Lance L.

    2015-05-01

    Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 °C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity. However, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 °C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500 °C. Furthermore, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.

  2. LOW ACTIVATION JOINING OF SIC/SIC COMPOSITES FOR FUSION APPLICATIONS: MODELING DUAL-PHASE MICROSTRUCTURES AND DISSIMILAR MATERIAL JOINTS

    SciTech Connect

    Henager, Charles H.; Nguyen, Ba Nghiep; Kurtz, Richard J.; Ferraris, M.; Katoh, Y.

    2016-03-31

    Finite element continuum damage models (FE-CDM) have been developed to simulate and model dual-phase joints and cracked joints for improved analysis of SiC materials in nuclear environments. This report extends the analysis from the last reporting cycle by including results from dual-phase models and from cracked joint models.

  3. Current transport property of n-GaN /n-6H-SiC heterojunction: Influence of interface states

    NASA Astrophysics Data System (ADS)

    Huang, Y.; Chen, X. D.; Fung, S.; Beling, C. D.; Ling, C. C.; Dai, X. Q.; Xie, M. H.

    2005-03-01

    Heterostructures of n-GaN /n-6H-SiC grown by hydride vapor phase epitaxy (HVPE) and molecular-beam epitaxy (MBE) are characterized with the current-voltage (I-V), capacitance-voltage (C-V), and deep level transient spectroscopy (DLTS) techniques. Using different contact configurations, the I -V results reveal a rectifying barrier in the n-GaN /n-6H-SiC heterostructures. When GaN is negatively biased, the current is exponentially proportional to the applied voltage with the built-in barrier being 0.4-1.1eV for the HVPE samples and 0.5eV for the MBE sample. DLTS measurements reveal intense band-like deep level states in the interfacial region of the heterostructure, and the Fermi-level pinning by these deep level defects is invoked to account for the interfacial rectifying barrier of the heterostructures.

  4. Surface birefringence of self-assembly periodic nanostructures induced on 6H-SiC surface by femtosecond laser

    NASA Astrophysics Data System (ADS)

    Song, Juan; Dai, Ye; Tao, Wenjun; Gong, Min; Ma, Guohong; Zhao, Quanzhong; Qiu, Jianrong

    2016-02-01

    In this paper, we report the birefringence effect of surface self-assembly periodic nanostructures induced on 6H-SiC by femtosecond laser irradiation. Birefringence characteristic (e.g. cross-polarized image), measured by cross polarized microscopy, was found to be controlled by both single pulse energy and scanning velocity. Comparing birefringence measurement results of nanostructures and morphology characterization by Scanning electron microscopy, it is shown that ∼200 nm-period deep-subwavelength periodic ripples (DSWR) plays a dominating role in the birefringence effect. Raman spectra show that the change of retardance with pulse energy and scanning velocity is most possibly caused by the thickness variation of DSWR. Finally, a light attenuator based on a single layer of DSWR structure on 6H-SiC surface was constructed and tested by light source of 800 nm to have a tunable attenuating ratio of 69-100%.

  5. Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC

    NASA Astrophysics Data System (ADS)

    Zhou, Tian-Yu; Liu, Xue-Chao; Huang, Wei; Zhuo, Shi-Yi; Zheng, Yan-Qing; Shi, Er-Wei

    2015-12-01

    A Ni/Ta bilayer is deposited on n-type 6H-SiC and then annealed at different temperatures to form an ohmic contact. The electrical properties are characterized by I-V curve measurement and the specific contact resistance is extracted by the transmission line method. The phase formation and microstructure of the Ni/Ta bilayer are studied after thermal annealing. The crystalline and microstructure properties are analyzed by using glance incident x-ray diffraction (GIXRD), Raman spectroscopy, and transmission electron microscopy. It is found that the transformation from the Schottky to the Ohmic occurs at 1050 °C and the GIXRD results show a distinct phase change from Ta2C to TaC at this temperature. A specific contact resistance of 6.5× 10-5 Ω·cm2 is obtained for sample Ni(80 nm)/Ta(20 nm)/6H-SiC after being annealed at 1050 °C. The formation of the TaC phase is regarded as the main reason for the excellent Ohmic properties of the Ni/Ta contacts to 6H-SiC. Raman and TEM data reveal that the graphite carbon is drastically consumed by the Ta element, which can improve the contact thermal stability. A schematic diagram is proposed to illustrate the microstructural changes of Ni/Ta/6H-SiC when annealed at different temperatures. Project supported by the Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10), the Shanghai Rising-star Program, China (Grant No. 13QA1403800), the Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province, China (Grant No. BY2011119), and the National High-tech Research and Development Program of China (Grant Nos. 2013AA031603 and 2014AA032602).

  6. Cascade synthesis of polyoxygenated 6H,11H-[2]benzopyrano-[4,3-c][1]benzopyran-11-ones.

    PubMed

    Naumov, Mikael I; Sutirin, Sergey A; Shavyrin, Andrey S; Ganina, Olga G; Beletskaya, Irina P; Bourgarel-Rey, Véronique; Combes, Sébastien; Finet, Jean-Pierre; Fedorov, Alexey Yu

    2007-04-27

    2-(methoxymethoxymethyl)aryllead triacetates, obtained in situ from the corresponding arylboronic acids, reacted with 4-hydroxycoumarins, leading to 3-(2-methoxymethoxymethyl)aryl-4-hydroxycoumarin derivatives in good to high yields. These compounds underwent a cascade sequence of reactions, deprotection-halogenation-annulation, to afford polyoxygenated tetracyclic 6H,11H-[2]benzopyrano-[4,3-c] [1]benzopyran-11-ones in good yields. Some compounds showed a moderate cytotoxicity against human epithelial mammary HBL100 cells.

  7. Self-assembly of amphiphilic peptide (AF)6H5K15 derivatives: roles of hydrophilic and hydrophobic residues.

    PubMed

    Thota, Naresh; Jiang, Jianwen

    2014-03-13

    A molecular dynamics simulation study is reported to investigate the roles of hydrophilic and hydrophobic residues in the self-assembly of (AF)6H5K15 peptide derivatives. The peptide, as well as water and counterions, are represented by the MARTINI coarse-grained model. The assembly is observed to follow a three-step process: formation of small clusters, large clusters, and micelles. With increasing length of hydrophilic Lys residues in (AF)6H5Kn (n = 10, 15, 20, and 25), assembly capability is found to be reduced with the formation of smaller micelles or the presence of individual peptide chains. Upon replacing Ala by more hydrophobic Phe in AmFnH5K15 (m + n = 12), larger micelles are formed. With increasing length of hydrophobic Phe residues in FnH5K15 (n = 4, 8, 12, and 16), micelle size increases and the morphology shifts from spherical to fiber-like. The simulation study provides mechanistic insight into the crucial roles of hydrophilicity and hydrophobicity in the assembly of (AF)6H5K15 derivatives; it reveals that assembly capability is reduced by increasing hydrophilicity, whereas increasing hydrophobicity leads to morphology transition.

  8. Evidence from Broadband Rotational Spectroscopy for a Complex Between AgCCH and C6H6

    NASA Astrophysics Data System (ADS)

    Zaleski, Daniel P.; Stephens, Susanna Louise; Walker, Nick; Legon, Anthony

    2014-06-01

    Last year, at the 68th International Symposium of Molecular Spectroscopy, the rotational spectrum of a complex formed between C2H2 and AgCCH was presented. The geometry was found to be T-shaped with the silver atom coordinated to the center of the CC bond in acetylene. Evidence for a new complex formed between AgCCH and C6H6 is now presented in the form of deep-averaged broadband rotational spectra. The spectra are observed only when both C2H2 and C6H6 are present in the gas sample. The relative intensities of the observed spectra are consistent with the naturally-occurring abundance ratio of the isotopes of silver. The shift on substitution of 107Ag for 109Ag implies a silver atom positioned close to the center of mass. The isotopic shifts observed when C2D2 is used as a precursor instead of C2H2 are also consistent with assignment to a complex formed between C6H6 and AgCCH/D. The geometry of the complex is yet to be precisely established.

  9. Enhancing the scopolamine production in transgenic plants of Atropa belladonna by overexpressing pmt and h6h genes.

    PubMed

    Wang, Xirong; Chen, Min; Yang, Chunxian; Liu, Xiaoqiang; Zhang, Lei; Lan, Xiaozhong; Tang, Kexuan; Liao, Zhihua

    2011-12-01

    Atropa belladonna is officially deemed as the commercial plant to produce scopolamine in China. In this study we report the simultaneous overexpression of two functional genes involved in biosynthesis of scopolamine, which encode the upstream key enzyme putrescine N-methyltransferase (PMT) and the downstream key enzyme hyoscyamine 6β-hydroxylase (H6H), respectively, in transgenic herbal plants Atropa belladonna. Analysis of gene expression profile indicated that both pmt and h6h were expressed at a higher level in transgenic lines, which would be favorable for biosynthesis of scopolamine. High-performance liquid chromatography result suggested that transgenic lines could produce higher accumulation of scopolamine at different levels compared with wild-type lines. Scopolamine content increased to 7.3-fold in transgenic line D9 compared with control lines. This study not only confirms that co-overexpression of pmt and h6h is an ideal method to improve the biosynthetic capacity of scopolamine but also successfully cultivates the transgenic line D9, which significantly enhanced the scopolamine accumulation. Our research can serve as an alternative choice to provide scopolamine resources for relative industry, which is more competitive than conventional market.

  10. Deep level defect studies in semi-insulating 4H- and 6H-silicon carbide using optical admittance spectroscopy

    NASA Astrophysics Data System (ADS)

    Lee, Wonwoo

    The objective of this study is to determine the deep vanadium defect levels in semi-insulating 4H- and 6H- silicon carbide using optical admittance spectroscopy. Also infrared spectroscopy and electron paramagnetic resonance spectroscopy are conducted to support the evidence of vanadium donor and acceptor levels obtained from OAS measurements. Vanadium acts as an amphoteric impurity in silicon carbide with a V3+/4+ acceptor level and V4+/5+ donor level. Although the value for the donor level is well established, the V3+/4+ defect level remains controversial. OAS shows that the vanadium donor level is isolated near Ec-1.7 eV, and the vanadium acceptor level is located at Ec-0.75 eV at a cubic site and Ec-0.94 eV at a hexagonal site in 4H-SiC, while the vanadium donor level of 6H-SiC samples is about Ec-1.5 eV. The acceptor levels of 6H-SiC were assigned to Ec-0.67 eV, E c -0.70 eV at two cubic sites, and Ec-0.87 eV at a hexagonal site. IR spectra demonstrated that the signatures of the vanadium V 3+ and V4+ charge states are present in the samples. EPR and photo-induced EPR are used to identify the V3+/4+ and V4+/5+ levels as well as the V3+ and V 4+ charge states. EPR spectra represent both V3+ and V4+ in 4H- and 6H samples consistent with FTIR data. EPR and photo-induced EPR suggest that the va nadium acceptor level is between 0.7 eV and 0.86 eV, while the donor level is near Ec-1.5 eV in 6H-SiC. The donor level of 4H-SiC is located at Ec-1.6 eV. Thus, the data obtained from EPR and FTIR support the assignment of the vanadium defect levels determined by OAS. Vanadium complexes induced by other elements such as titanium, hydrogen, and nitrogen atoms are also observed in OAS spectra and will be discussed in the text.

  11. Pd/CeO2/SiC Chemical Sensors

    NASA Technical Reports Server (NTRS)

    Lu, Weijie; Collins, W. Eugene

    2005-01-01

    The incorporation of nanostructured interfacial layers of CeO2 has been proposed to enhance the performances of Pd/SiC Schottky diodes used to sense hydrogen and hydrocarbons at high temperatures. If successful, this development could prove beneficial in numerous applications in which there are requirements to sense hydrogen and hydrocarbons at high temperatures: examples include monitoring of exhaust gases from engines and detecting fires. Sensitivity and thermal stability are major considerations affecting the development of high-temperature chemical sensors. In the case of a metal/SiC Schottky diode for a number of metals, the SiC becomes more chemically active in the presence of the thin metal film on the SiC surface at high temperature. This increase in chemical reactivity causes changes in chemical composition and structure of the metal/SiC interface. The practical effect of the changes is to alter the electronic and other properties of the device in such a manner as to degrade its performance as a chemical sensor. To delay or prevent these changes, it is necessary to limit operation to a temperature <450 C for these sensor structures. The present proposal to incorporate interfacial CeO2 films is based partly on the observation that nanostructured materials in general have potentially useful electrical properties, including an ability to enhance the transfer of electrons. In particular, nanostructured CeO2, that is CeO2 with nanosized grains, has shown promise for incorporation into hightemperature electronic devices. Nanostructured CeO2 films can be formed on SiC and have been shown to exhibit high thermal stability on SiC, characterized by the ability to withstand temperatures somewhat greater than 700 C for limited times. The exchanges of oxygen between CeO2 and SiC prevent the formation of carbon and other chemical species that are unfavorable for operation of a SiC-based Schottky diode as a chemical sensor. Consequently, it is anticipated that in a Pd

  12. Total cross sections of electron scattering by C4H8O, C5H10O2, C6H5F, C6H5Cl, C6F5Cl, C6H4(CHO)F and C4H8O2 at 30-5000 eV

    NASA Astrophysics Data System (ADS)

    Shi, D. H.; Liu, Y. F.; Ma, H.; Yu, B. H.; Sun, J. F.; Zhu, Z. L.

    2008-08-01

    Total cross sections for electron scattering by large molecules C4H8O, C5H10O2, C6H5F, C6H5Cl, C6F5Cl, C6H4(CHO)F and C4H8O2 are calculated at the Hartree-Fork level using the modified additivity rule approach. The modified additivity rule approach, which was proposed by Shi et al. [Eur. Phys. J. D 45, 253 (2007); Nucl. Instrum. Meth. B 254, 205 (2007)], takes into consideration that the contributions of the geometric shielding effect vary with the energy of the incident electrons, the target’s molecular dimension and the atomic and electronic numbers of the molecule. The present calculations cover the collision energies ranging from 30 to 5000 eV. The quantitative total cross sections are compared with those obtained by experiments and other theories. Good agreement is obtained even at energies of several tens of eV. It shows that the modified additivity rule approach is applicable to calculate the total cross sections of electron scattering by so large molecules at intermediate and high energies, especially above 100 eV. The total cross sections for electron scattering by the C4H8O2 molecule are predicted although no experimental and theoretical data are available for comparison over the present energy region.

  13. Effects of SiC on Properties of Cu-SiC Metal Matrix Composites

    NASA Astrophysics Data System (ADS)

    Efe, G. Celebi; Altinsoy, I.; Ipek, M.; Zeytin, S.; Bindal, C.

    2011-12-01

    This paper was focused on the effects of particle size and distribution on some properties of the SiC particle reinforced Cu composites. Copper powder produced by cementation method was reinforced with SiC particles having 1 and 30 μm particle size and sintered at 700 °C. SEM studies showed that SiC particles dispersed in copper matrix homogenously. The presence of Cu and SiC components in composites were verified by XRD analysis technique. The relative densities of Cu-SiC composites determined by Archimedes' principle are ranged from 96.2% to 90.9% for SiC with 1 μm particle size, 97.0 to 95.0 for SiC with 30 μm particle size. Measured hardness of sintered compacts varied from 130 to 155 HVN for SiC having 1 μm particle size, 188 to 229 HVN for SiC having 1 μm particle size. Maximum electrical conductivity of test materials was obtained as 80.0% IACS (International annealed copper standard) for SiC with 1 μm particle size and 83.0% IACS for SiC with 30 μm particle size.

  14. Astrocyte-Dependent Slow Inward Currents (SICs) Participate in Neuromodulatory Mechanisms in the Pedunculopontine Nucleus (PPN)

    PubMed Central

    Kovács, Adrienn; Pál, Balázs

    2017-01-01

    Slow inward currents (SICs) are known as excitatory events of neurons caused by astrocytic glutamate release and consequential activation of neuronal extrasynaptic NMDA receptors. In the present article we investigate the role of these astrocyte-dependent excitatory events on a cholinergic nucleus of the reticular activating system (RAS), the pedunculopontine nucleus (PPN). It is well known about this and other elements of the RAS, that they do not only give rise to neuromodulatory innervation of several areas, but also targets neuromodulatory actions from other members of the RAS or factors providing the homeostatic drive for sleep. Using slice electrophysiology, optogenetics and morphological reconstruction, we revealed that SICs are present in a population of PPN neurons. The frequency of SICs recorded on PPN neurons was higher when the soma of the given neuron was close to an astrocytic soma. SICs do not appear simultaneously on neighboring neurons, thus it is unlikely that they synchronize neuronal activity in this structure. Occurrence of SICs is regulated by cannabinoid, muscarinic and serotonergic neuromodulatory mechanisms. In most cases, SICs occurred independently from tonic neuronal currents. SICs were affected by different neuromodulatory agents in a rather uniform way: if control SIC activity was low, the applied drugs increased it, but if SIC activity was increased in control, the same drugs lowered it. SICs of PPN neurons possibly represent a mechanism which elicits network-independent spikes on certain PPN neurons; forming an alternative, astrocyte-dependent pathway of neuromodulatory mechanisms. PMID:28203147

  15. Operating procedure for SiC defect detection: Data support document

    SciTech Connect

    Adams, C.C.; Partain, K.E.

    1989-09-29

    The feasibility of the Hg Intrusion QC method for measuring SiC coating defects for the MHTGR was conducted as a potential improvement for the Burn/Leach (B/L) QC method currently used. The purpose for evaluating the Hg Intrusion QC method as an alternative method was to determine if B/L QC method underestimated SiC coating defects. Some evidence in work conducted earlier, indicated that TRISO-coated fuel particles with low SiC coating defects measured by the B/L QC method showed higher releases of metallic fission products. These data indicated that the SiC coating defect fractions were higher than the B/L measured data indicated. Sample sizes used in the current study were too small to conclusively demonstrate that the B/L QC method under estimate SiC coating defects. However, observations made during this study indicated a need for an additional QC method to the B/L QC method to measure SiC coating defects for the higher quality MHTGR fuels. The B/L QC method is the best method for measuring SiC coating defects with missing SiC layers or broken SiC coatings (gross SiC defects). However, SiC coating defects with microcracks and other SiC defects not detected by the B/L method may contribute to the release of metallic fission products in-service. For these type of SiC coating defects, the Hg Intrusion QC method investigated in this study is feasible, but particle sample size should be increased to a much larger sample size (100,000 particles per test) for the MHTGR. 7 refs., 5 figs., 9 tabs.

  16. Creep behavior for advanced polycrystalline SiC fibers

    SciTech Connect

    Youngblood, G.E.; Jones, R.H.; Kohyama, Akira

    1997-04-01

    A bend stress relaxation (BSR) test has been utilized to examine irradiation enhanced creep in polycrystalline SiC fibers which are under development for use as fiber reinforcement in SiC/SiC composite. Qualitative, S-shaped 1hr BSR curves were compared for three selected advanced SiC fiber types and standard Nicalon CG fiber. The temperature corresponding to the middle of the S-curve (where the BSR parameter m = 0.5) is a measure of a fiber`s thermal stability as well as it creep resistance. In order of decreasing thermal creep resistance, the measured transition temperatures were Nicalon S (1450{degrees}C), Sylramic (1420{degrees}C), Hi-Nicalon (1230{degrees}C) and Nicalon CG (1110{degrees}C).

  17. Laser synthesis of carbon-rich SiC nanoribbons

    NASA Astrophysics Data System (ADS)

    Salama, I. A.; Quick, N. R.; Kar, A.

    2003-06-01

    A nanosecond pulsed laser direct-write and doping (LDWD) technique is used for the fabrication of carbon-rich silicon carbide nanoribbons heterostructure in a single crystal 4H-SiC wafer. Characterization by high-resolution transmission electron microscope and selected area electron diffraction pattern revealed the presence of nanosize crystalline ribbons with hexagonal graphite structure in the heat-affected zone below the decomposition temperature isotherm in the SiC epilayer. The nanoribbons exist in three layers each being approximately 50-60 nm thick, containing 15-17 individual sheets. The layers are self-aligned on the (0001) plane of the SiC epilayer with their c axis at 87° to the incident laser beam. The LDWD technique permits synthesis of heterostructured nanoribbons in a single step without additional material or catalyst, and effectively eliminates the need for nanostructure handling and transferring processes.

  18. STM characterization of a graphitized SiC(0001)surface

    NASA Astrophysics Data System (ADS)

    Brar, Victor; Zhang, Yuanbo; Yayon, Yossi; Ohta, Taisuke; McChesney, Jessica; Rotenberg, Eli; Crommie, Mike

    2007-03-01

    The two-dimensional electron gas in a single graphene sheet exhibits unique properties due the cone-shaped electron band structure near the Fermi energy. Recently the growth of a single layer of graphene on SiC(0001) has been demonstrated, opening new possibilities for fabricating large scale graphene-based devices. We have performed scanning tunneling microscopy and spectroscopy of single and bi-layer graphene films on SiC(0001). Atomically resolved topographs and dI/dV maps show clear differences between the single and bi-layer surfaces at different length scales. We have characterized the energy dependence and spatial distribution of the electron local density of states in these single and bi-layer films.

  19. Research on microwave joining of SiC

    SciTech Connect

    1995-12-31

    The objectives of this research project are to identify optimum time-temperature profiles for the microwave joining of silicon carbide and to develop new microwave joining methods that can be applied to accomplish in situ formation of silicon carbide interlayers and to join larger samples required for industrial applications. Work during this reporting period was focused on investigation of the effect of specimen preparation on joining of SiC using polymer precursors to form SiC in situ at the interface. During this period, LANL also completed the evaluation of joints that were made by FMT using four different joining temperatures, as part of an effort to determine optimum joining temperature.

  20. Molten salt corrosion of SiC: Pitting mechanism

    NASA Technical Reports Server (NTRS)

    Jacobson, N. S.; Smialek, J. L.

    1985-01-01

    Thin films of Na2SO4 and Na2CO3 at 1000 C lead to severe pitting of sintered alpha-SiC. These pits are important as they cause a strength reduction in this material. The growth of product layers is related to pit formation for the Na2CO3 case. The early reaction stages involve repeated oxidation and dissolution to form sodium silicate. This results in severe grain boundary attack. After this a porous silica layer forms between the sodium silicate melt and the SiC. The pores in this layer appear to act as paths for the melt to reach the SiC and create larger pits.

  1. The SiC Direct Target Prototype for SPES

    SciTech Connect

    Rizzi, Valentina; Andrighetto, Alberto; Antonucci, C.; Barbui, Marina; Biasetto, Lisa; Carturan, S.; Celona, L.; Cevolani, S.; Chines, Francesco; Cinausero, Marco; Colombo, P.; Cuttone, G.; Di Bernardo, P.; Giacchini, Mauro; Gramegna, Fabiana; Lollo, M.; Maggioni, G.; Manzolaro, Mattia; Meneghetti, G.; Messina, G. Esteban; Petrovich, C.; Piga, L.; Prete, Gianfranco; Re, Maurizio; Rizzo, D.; Stracener, Daniel W; Tonezzer, Michele; Zanonato, P.

    2007-01-01

    A R&D study for the realization of a Direct Target is in progress within the SPES project for RIBs production at the Laboratori Nazionali of Legnaro. A proton beam (40 MeV energy, 0.2 niA current) is supposed to impinge directly on a UCx multiple thin disks target, the power released by the proton beam is dissipated mainly through irradiation. A SiC target prototype with a 1:5 scale has been developed and tested. Thermal, mechanical and release calculations have been performed to fully characterize the prototype. An online test has been performed at the HRIBF facility of the Oak Ridge National Laboratory (ORNL), showing that our Sic target can sustain a proton beam current considerably higher than the maximum beam current used with the standard HRIBF target configuration.

  2. The SiC Direct Target Prototype for SPES

    SciTech Connect

    Rizzi, V.; Andrighetto, A.; Barbui, M.; Carturan, S.; Cinausero, M.; Giacchini, M.; Gramegna, F.; Lollo, M.; Maggioni, G.; Prete, G.; Tonezzer, M.; Antonucci, C.; Cevolani, S.; Petrovich, C.; Biasetto, L.; Colombo, P.; Manzolaro, M.; Meneghetti, M.; Celona, L.; Chines, F.

    2007-10-26

    A R and D study for the realization of a Direct Target is in progress within the SPES project for RIBs production at the Laboratori Nazionali of Legnaro. A proton beam (40 MeV energy, 0.2 mA current) is supposed to impinge directly on a UCx multiple thin disks target, the power released by the proton beam is dissipated mainly through irradiation. A SiC target prototype with a 1:5 scale has been developed and tested. Thermal, mechanical and release calculations have been performed to fully characterize the prototype. An online test has been performed at the HRIBF facility of the Oak Ridge National Laboratory (ORNL), showing that our SiC target can sustain a proton beam current considerably higher than the maximum beam current used with the standard HRIBF target configuration.

  3. Stern-Gerlach experiments of one-dimensional metal-benzene sandwich clusters: Mn(C6H6)m (M = Al, Sc, Ti, and V).

    PubMed

    Miyajima, Ken; Yabushita, Satoshi; Knickelbein, Mark B; Nakajima, Atsushi

    2007-07-11

    A molecular beam of multilayer metal-benzene organometallic clusters Mn(C6H6)m (M = Al, Sc, Ti, and V) was produced by a laser vaporization synthesis method, and their magnetic deflections were measured. Multidecker sandwich clusters of transition-metal atoms and benzene Scn(C6H6)n+1 (n = 1, 2) and Vn(C6H6)n+1 (n = 1-4) possess magnetic moments that increase monotonously with n. The magnetic moments of Al(C6H6), Scn(C6H6)n+1, and Vn(C6H6)n+1 are smaller than that of their spin-only values as a result of intracluster spin relaxation, an effect that depends on the orbital angular momenta and bonding characters of the orbitals containing electron spin. While Ti(C6H6)2 was found to be nonmagnetic, Tin(C6H6)n+1 (n = 2, 3) possess nonzero magnetic moments. The mechanism of ferromagnetic spin ordering in M2(C6H6)3 (M = Sc, Ti, V) is discussed qualitatively in terms of molecular orbital analysis. These sandwich species represent a new class of one-dimensional molecular magnets in which the transition-metal atoms are formally zerovalent.

  4. EBSD investigation of SiC for HTR fuel particles

    NASA Astrophysics Data System (ADS)

    Helary, D.; Dugne, O.; Bourrat, X.; Jouneau, P. H.; Cellier, F.

    2006-05-01

    Electron back-scattering diffraction (EBSD) can be successfully performed on SiC coatings for HTR fuel particles. EBSD grain maps obtained from thick and thin unirradiated samples are presented, along with pole figures showing textures and a chart showing the distribution of grain aspect ratios. This information is of great interest, and contributes to improving the process parameters and ensuring the reproducibility of coatings.

  5. SiC device development for high temperature sensor applications

    NASA Technical Reports Server (NTRS)

    Shor, J. S.; Goldstein, David; Kurtz, A. D.; Osgood, R. M.

    1992-01-01

    Progress made in the processing and characterization of 3C-SiC for high temperature sensor applications is reviewed. Piezoresistance properties of silicon carbide and the temperature coefficient of resistivity of n-type beta-SiC are presented. In addition, photoelectrical etching and dopant selective etch-stops in SiC and high temperature Ohmic contacts for n-type beta-SiC sensors are discussed.

  6. Bilateral comparison of an IPRT between KRISS and SIC

    NASA Astrophysics Data System (ADS)

    Yang, I.; Sánchez, C. A.

    2013-09-01

    As a follow-up of a memorandum of understanding signed in 2009 between KRISS of Korea and SIC of Colombia, the two national metrology institutes carried out a bilateral comparison of calibration of an industrial platinum resistance thermometer (IPRT). A protocol that was similar to that of APMP.T-S6 has been agreed and followed in the comparison. The method of the calibration at each laboratory was calibration by comparison against calibrated reference thermometers. The nominal temperatures of the comparison were nine temperatures, including the ice point, between -50 °C and 500 °C. One commercially-available IPRT with α ˜ 0.00385 °C-1 that was prepared by KRISS was calibrated by comparison firstly at KRISS, and then at SIC, and finally at KRISS to assess the drift of the artifact during the comparison. At KRISS, an ice-point bath, three liquid baths and a salt bath were used to provide isothermal environment for the comparison. At SIC, an ice-point bath, two liquid baths and a vertical furnace with a metal equalizing block were used. The claimed uncertainty with k=2 of the calibration at KRISS, excluding the longterm instability and hysteresis of the traveling IPRT, was 30 mK, and that at SIC was 120 mK. The capability of the calibration of the two laboratories from -50 °C to 500 °C showed a good agreement within the claimed uncertainty of the calibration. The largest deviation of the two calibration results was 75 mK at 500 °C.

  7. Role of the Cdk Inhibitor Sic 1 in Start

    DTIC Science & Technology

    1998-08-01

    Cold Spring Harbor Laboratory Cold Spring Harbor , New York 11724 REPORT DATE: August 1998 TYPE OF REPORT: Annual PREPARED FOR...AND ADDRESS(ES) Cold Spring Harbor Laboratory Cold Spring Harbor , New York 11724 8. PERFORMING ORGANIZATION REPORT NUMBER 9. SPONSORING f...Meeting at Cold Spring Harbor Laboratory. Futcher, B., Yang, Q.-H., Sherlock, G., Marshak, D. and Schneider, B. SIC1 and other

  8. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1961-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo, taken September 5, 1961, shows pumps used for extracting water emerging form a disturbed natural spring that occurred during the excavation of the site. The pumping became a daily ritual and the site is still pumped today.

  9. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In this photo, taken June 24, 1963, the four tower legs of the test stand can be seen at their maximum height.

  10. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo, depicts the progress of the stand as of January 14, 1963, with its four towers prominently rising.

  11. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1962-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This construction photo depicts the progress of the stand site as of October 8, 1962.

  12. Synthesis, structural characterization, electrical properties and antioxidant activity of [p-(NH3)C6H4NH3]3P6O18·6H2O

    NASA Astrophysics Data System (ADS)

    Fezai, Ramzi; Mezni, Ali; Kahlaoui, Messaoud; Rzaigui, Mohamed

    2016-09-01

    Single crystals of a novel organic cyclohexaphosphate, [p-(NH3)C6H4NH3]3P6O18.6H2O, have been prepared in aqueous solution. Its crystal structure can be described by a three-dimensional framework where the P6O186- rings are interconnected by hydrogen bonds to form anionic layers between which organic cations are located. Hydrogen bonding network connecting the different components is given. The thermal stability and spectroscopic properties of this material are given too. Its DC and AC electrical conductivities, modulus analysis and dielectric constants have been investigated. The AC conductivity is found to obey the universal power law. The DC electrical conductivity indicates a semiconductor behavior. The kind of the observed conduction is protonic by translocation. X-rays structural and electrical results are correlated. This compound has also been screened for its antioxidant activity, determined in vitro, using 1,1-diphenyl-2-picrylhydrazyl, reducing power, hydroxyl scavenging ability and ferrous ion chelating (FIC) methods and with ascorbic acid as reference.

  13. Promoting scopolamine biosynthesis in transgenic Atropa belladonna plants with pmt and h6h overexpression under field conditions.

    PubMed

    Xia, Ke; Liu, Xiaoqiang; Zhang, Qiaozhuo; Qiang, Wei; Guo, Jianjun; Lan, Xiaozhong; Chen, Min; Liao, Zhihua

    2016-09-01

    Atropa belladonna is one of the most important plant sources for producing pharmaceutical tropane alkaloids (TAs). T1 progeny of transgenic A. belladonna, in which putrescine N-methyltransferase (EC. 2.1.1.53) from Nicotiana tabacum (NtPMT) and hyoscyamine 6β-hydroxylase (EC. 1.14.11.14) from Hyoscyamus niger (HnH6H) were overexpressed, were established to investigate TA biosynthesis and distribution in ripe fruits, leaves, stems, primary roots and secondary roots under field conditions. Both NtPMT and HnH6H were detected at the transcriptional level in transgenic plants, whereas they were not detected in wild-type plants. The transgenes did not influence the root-specific expression patterns of endogenous TA biosynthetic genes in A. belladonna. All four endogenous TA biosynthetic genes (AbPMT, AbTRI, AbCYP80F1 and AbH6H) had the highest/exclusive expression levels in secondary roots, suggesting that TAs were mainly synthesized in secondary roots. T1 progeny of transgenic A. belladonna showed an impressive scopolamine-rich chemotype that greatly improved the pharmaceutical value of A. belladonna. The higher efficiency of hyoscyamine conversion was found in aerial than in underground parts. In aerial parts of transgenic plants, hyoscyamine was totally converted to downstream alkaloids, especially scopolamine. Hyoscyamine, anisodamine and scopolamine were detected in underground parts, but scopolamine and anisodamine were more abundant than hyoscyamine. The exclusively higher levels of anisodamine in roots suggested that it might be difficult for its translocation from root to aerial organs. T1 progeny of transgenic A. belladonna, which produces scopolamine at very high levels (2.94-5.13 mg g(-1)) in field conditions, can provide more valuable plant materials for scopolamine production.

  14. Research on microwave joining of SiC

    SciTech Connect

    Silberglitt, R.

    1995-07-31

    Results: identification of optimum joining temperature range for reaction bonded Si carbide at 1420-1500 C; demonstration that specimens joined within this range have fracture roughness greater than as-received material; and demonstration of ability to use SiC formed in situ from the decomposition of polycarbosilane as a joining aid for sintered Si carbide. In the latter case, the interlayer material was also shown to fill any pores in the joining specimens near the interlayer. Together with the demonstration of leaktight joints between tube sections of reaction bonded and sintered SiC under the previous contract, these results provide the foundation for scaleup to joining of the larger and longer tubes needed for radiant burner and heat exchanger tube assemblies. The formation of SiC in situ is important because maintaining roundness of these large tubes is a technical challenge for the tube manufacturer, so that formation of a leaktight joint may require some degree of gap filling.

  15. SiC X-ray detectors for harsh environments

    NASA Astrophysics Data System (ADS)

    Lees, J. E.; Barnett, A. M.; Bassford, D. J.; Stevens, R. C.; Horsfall, A. B.

    2011-01-01

    We have characterised a number of SiC Schottky Diodes as soft X-ray photon counting detectors over the temperature range -30°C to +80°C. We present the spectroscopic performance, as measured over the energy range ~ 6 keV-30 keV and correlate the data with measurements of the temperature dependence of the device leakage current. The results show that these detectors can be used for X-ray photon counting spectroscopy over a wide temperature range. Measurement of the radiation tolerance of Semi Transparent SiC Schottky Diodes (STSSD) has shown that these devices can still operate as photon counting X-ray spectrometers after proton irradiation (total dose of 1013 cm-2, 50 MeV). We present measurements on proton irradiated STSSDs that indicate that radiation induced traps, located in the upper half of the bandgap, have reduced the mobility and concentration of charge carriers. X-ray spectra predicted using a Monte Carlo model for SiC diodes are compared with measured spectra.

  16. Microstructure comparison of transparent and opaque CVD SiC

    SciTech Connect

    Kim, Y.; Zangvil, A.; Goela, J.S.; Taylor, R.L.

    1995-06-01

    Transparent, translucent, and opaque regions of high-purity bulk SiC, produced by CVD, have been characterized for physical properties as well as microstructure and chemical purity to correlate degree of transparency with other material characteristics. A good correlation was obtained between SiC vis-a-vis IR transmission and its microstructure. The transparent material is highly oriented toward the {l_angle}111{r_angle} direction and is characterized by pure, essentially defect-free, cubic {beta}-SiC columnar grains of size 5--10 {micro}m. The translucent material of various colors is mostly cubic in structure but contains large amounts of twins, usually as complex mixtures of several twinning variants and secondary twinning within a single grain. Opaque CVD SiC is randomly oriented, does not exhibit columnar grains, and contains one directional disorder with hexagonal ({alpha}-SiC) symmetry in a majority of grains and high density of dislocations elsewhere.

  17. The influence of SiC particle size and volume fraction on the thermal conductivity of spark plasma sintered UO2-SiC composites

    NASA Astrophysics Data System (ADS)

    Yeo, Sunghwan; Baney, Ronald; Subhash, Ghatu; Tulenko, James

    2013-11-01

    This study examines the influence of Silicon Carbide (SiC) particle addition on thermal conductivity of UO2-SiC composite pellets. UO2 powder and β-SiC particles of different sizes and of different volume fractions were mechanically mixed and sintered at 1350-1450 °C for 5 min by Spark Plasma Sintering (SPS). The particle size (0.6-55 μm diameter) and volume fraction (5-20%) of SiC were systematically varied to investigate their influence on the resulting UO2-SiC composite pellet microstructure and the thermal properties. It was found that SiC particle size less than 16.9 μm with larger volume fraction is more effective for improving the thermal conductivity of the fuel pellets. Scanning Electron Microscopy examination revealed micro-cracking and interfacial debonding in the composites containing larger size SiC particles (16.9 and 55 μm) which resulted in reduced thermal conductivity. For the UO2-SiC composite pellets containing 1 μm diameter SiC particles, the thermal conductivity increased almost linearly with volume fraction of particles. However, the addition of a larger volume fraction of SiC reduces the amount of heavy metal in the composite pellet and therefore a higher U-235 enrichment is necessary to compensate for the heavy metal loss. The experimental thermal conductivity values of the UO2-SiC composite pellets are in good agreement with the theoretical values based on the available model in the literature.

  18. Synchronistic preparation of fibre-like SiC and cubic-ZrO{sub 2}/SiC composite from zircon via carbothermal reduction process

    SciTech Connect

    Xu, Youguo; Liu, Yangai; Huang, Zhaohui; Fang, Minghao; Hu, Xiaozhi; Yin, Li; Huang, Juntong

    2013-01-15

    Graphical abstract: Display Omitted Highlights: ► Zircon carbothermal reduction was carried out in a tailor-made device at high-temperature air atmosphere. ► Fibre-like SiC and cubic-ZrO{sub 2}/SiC composite were obtained synchronically. ► Zirconium and silicon in zircon ore was initial separated. ► [SiO{sub 4}] was mutated to fibre-like SiC, while [ZrO{sub 8}] was transformed to cubic ZrO{sub 2}. ► The SiC were surprisingly enriched in the reducing atmosphere charred coal particles layers by gas–solid reaction. -- Abstract: Fibre-like SiC and cubic-ZrO{sub 2}/SiC composite were prepared respectively from zircon with yttrium oxide addition via carbothermal reduction process at 1600 °C for 4 h in an air atmosphere furnace, where the green samples were immerged in charred coal particles inside a high-temperature enclosed corundum crucible. The reaction products were characterized by XRD, XRF, XPS and SEM. The results indicate that ZrO{sub 2} in the products was mainly existed in the form of cubic phase. The reacted samples mainly contain cubic ZrO{sub 2}, β-SiC and trace amounts of zircon, with the SiC accounting for 14.8 wt%. Furthermore, a large quantity of fibre-like SiC was surprisingly found to concentrate in the charred coal particles layers around the samples. This study obtains fibre-like SiC and cubic-ZrO{sub 2}/SiC composite synchronically from zircon via carbothermal reduction process, which also bring a value-added high-performance application for natural zircon.

  19. Low-energy SiC2H6+ and SiC3H9+ ion beam productions by the mass-selection of fragments produced from hexamethyldisilane for SiC film formations

    NASA Astrophysics Data System (ADS)

    Yoshimura, Satoru; Sugimoto, Satoshi; Murai, Kensuke; Kiuchi, Masato

    2016-12-01

    We have been attempting to produce low-energy ion beams from fragments produced through the decomposition of hexamethyldisilane (HMD) for silicon carbide (SiC) film formations. We mass-selected SiC2H6+ and SiC3H9+ ions from fragments produced from HMD, and finally produced low-energy SiC2H6+ and SiC3H9+ ion beams. The ion energy was approximately 100 eV. Then, the ion beams were irradiated to Si(100) substrates. The temperature of the Si substrate was 800°C during the ion irradiation. The X-ray diffraction and Raman spectroscopy of the substrates obtained following SiC2H6+ ion irradiation demonstrated the occurrence of 3C-SiC deposition. On the other hand, the film deposited by the irradiation of SiC3H9+ ions included diamond-like carbon in addition to 3C-SiC.

  20. Comparative calculations of electron transport properties in 6H-SiC using three and five valley models

    NASA Astrophysics Data System (ADS)

    Talha, Nora; Bouazza, Benyounes; Guen Bouazza, Ahlam; Kadoun, Abd-Ed-Daim

    2016-07-01

    Steady-state electron properties are investigated in 6H-SiC at various temperatures, using Monte Carlo simulation where the band structure model is a major part when dealing with high fields. The aim of this work is to optimize the number of valleys involved in the simulation program in order to obtain accurate results while improving the calculation efficiency. For high fields, a five valley model was found to be more accurate than a three valley model and as efficient as the full band method though much less computer time-consuming.

  1. Fractographic Analysis of HfB2-SiC and ZrB2-SiC Composites

    NASA Technical Reports Server (NTRS)

    Mecholsky, J.J., Jr.; Ellerby, D. T.; Johnson, S. M.; Stackpoole, M. M.; Loehman, R. E.; Arnold, Jim (Technical Monitor)

    2001-01-01

    Hafnium diboride-silicon carbide and zirconium diboride-silicon carbide composites are potential materials for high temperature leading edge applications on reusable launch vehicles. In order to establish material constants necessary for evaluation of in-situ fracture, bars fractured in four point flexure were examined using fractographic principles. The fracture toughness was determined from measurements of the critical crack sizes and the strength values, and the crack branching constants were established to use in forensic fractography of materials for future flight applications. The fracture toughnesses range from about 13 MPam (sup 1/2) at room temperature to about 6 MPam (sup 1/2) at 1400 C for ZrB2-SiC composites and from about 11 MPam (sup 1/2) at room temperature to about 4 MPam (sup 1/2) at 1400 C for HfB2-SiC composites.

  2. Effect of oxygen on ion-beam induced synthesis of SiC in silicon

    NASA Astrophysics Data System (ADS)

    Artamonov, V. V.; Valakh, M. Ya.; Klyui, N. I.; Melnik, V. P.; Romanyuk, A. B.; Romanyuk, B. N.; Yuhimchuk, V. A.

    1999-01-01

    The properties of Si-structures with a buried silicon carbide (SiC) layer created by high-dose carbon implantation into Cz-Si or Fz-Si wafers followed by high-temperature annealing were studied by Raman and infrared spectroscopy. The effect of additional oxygen implantation on the peculiarities of SiC layer formation was also studied. It was shown that under the same implantation and post-implantation annealing conditions the buried SiC layer is more effectively formed in Cz-Si or in Si (Cz-or Fz-) subjected to additional oxygen implantation. So we can conclude that oxygen in silicon promotes the SiC layer formation due to SiO x precipitate creation and accommodation of the crystal volume in the region where SiC phase is formed. Carbon segregation and amorphous carbon film formation on SiC grain boundaries were revealed.

  3. AlGaN HEMTs on patterned resistive/conductive SiC templates

    NASA Astrophysics Data System (ADS)

    Prystawko, Pawel; Sarzynski, Marcin; Nowakowska-Siwinska, Anna; Crippa, Danilo; Kruszewski, Piotr; Wojtasiak, Wojciech; Leszczynski, Mike

    2017-04-01

    High performance GaN-based high electron mobility transistors (HEMTs) on SiC require low-miscut ( 0.45°), resistive substrates, which are very expensive. A cost-effective solution is to use resistive SiC template i.e., grow a thick resistive SiC epitaxial layer on cheap, conductive SiC substrate. However, this approach requires much higher miscut (2-8°). In the present work we show a lateral patterning technology capable to locally decrease the high miscut of the resistive SiC template, down to a level acceptable for GaN epitaxy. On such patterned SiC templates we grew smooth AlGaN/GaN structures. The maximum width of flat regions available for device fabrication was nearly 100 μm. In these flat regions AlGaN-based HEMTs were fabricated and characterized.

  4. [Cloning and expression of the key enzyme hyoscyamine 6 beta-hydroxylase gene (DaH6H) in scopolamine biosynthesis of Datura arborea].

    PubMed

    Qiang, Wei; Hou, Yan-ling; Li, Xiao; Xia, Ke; Liao, Zhi-hua

    2015-10-01

    Hyoscyamine 6 beta-hydroxylase (H6H) is the last rate-limiting enzyme directly catalyzing the formation of scopolamine in tropane alkaloids (TAs) biosynthesis pathway. It is the primary target gene in the genetic modification of TAs metabolic pathway. Full-length cDNA and gDNA sequences of a novel H6H gene were cloned from Datura arborea (DaH6H, GenBank accession numbers for cDNA and gDNA are KR006981 and KR006983, respectively). Nucleotide sequence analysis reveals an open reading frame of 1375 bp encoding 347 amino acids in the cDNA of DaH6H, while the gDNA of DaH6H contains four exons and three introns, with the highest similarity to the gDNA of H6H from D. stramonium. DaH6H also exhibited the most identity of 90.5% with DsH6H in amino acids and harbored conserved 2-oxoglutarate binding motif and two iron binding motifs. The expression level of DaH6H was highest in the mature leaf, followed by the secondary root, and with no expression in the primary root based on qPCR analysis. Its expression was inhibited by MeJA. DaH6H was expressed in E. coli and a 39 kD recombinant protein was detected in SDS-PAGE. Comparison of the contents of scopolamine and hyoscyamine in various TAs-producing plants revealed that D. arborea was one of the rare scopolamine predominant plants. Cloning of DaH6H gene will allow more research in the molecular regulatory mechanism of TAs biosynthesis in distinct plants and provide a new candidate gene for scopolamine metabolic engineering.

  5. SiC Optically Modulated Field-Effect Transistor

    NASA Technical Reports Server (NTRS)

    Tabib-Azar, Massood

    2009-01-01

    An optically modulated field-effect transistor (OFET) based on a silicon carbide junction field-effect transistor (JFET) is under study as, potentially, a prototype of devices that could be useful for detecting ultraviolet light. The SiC OFET is an experimental device that is one of several devices, including commercial and experimental photodiodes, that were initially evaluated as detectors of ultraviolet light from combustion and that could be incorporated into SiC integrated circuits to be designed to function as combustion sensors. The ultraviolet-detection sensitivity of the photodiodes was found to be less than desired, such that it would be necessary to process their outputs using high-gain amplification circuitry. On the other hand, in principle, the function of the OFET could be characterized as a combination of detection and amplification. In effect, its sensitivity could be considerably greater than that of a photodiode, such that the need for amplification external to the photodetector could be reduced or eliminated. The experimental SiC OFET was made by processes similar to JFET-fabrication processes developed at Glenn Research Center. The gate of the OFET is very long, wide, and thin, relative to the gates of typical prior SiC JFETs. Unlike in prior SiC FETs, the gate is almost completely transparent to near-ultraviolet and visible light. More specifically: The OFET includes a p+ gate layer less than 1/4 m thick, through which photons can be transported efficiently to the p+/p body interface. The gate is relatively long and wide (about 0.5 by 0.5 mm), such that holes generated at the body interface form a depletion layer that modulates the conductivity of the channel between the drain and the source. The exact physical mechanism of modulation of conductivity is a subject of continuing research. It is known that injection of minority charge carriers (in this case, holes) at the interface exerts a strong effect on the channel, resulting in amplification

  6. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the stand itself, related facilities were constructed during this time. Built to the northeast of the stand was a newly constructed Pump House. Its function was to provide water to the stand to prevent melting damage during testing. The water was sprayed through small holes in the stand's 1900 ton flame deflector at the rate of 320,000 gallons per minute. In this photo of the S-IC test stand, taken October 2, 1963, the flame deflector can be seen in the bottom center portion

  7. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the stand itself, related facilities were constructed during this time. Built to the northeast of the stand was a newly constructed Pump House. Its function was to provide water to the stand to prevent melting damage during testing. The water was sprayed through small holes in the stand's 1900 ton flame deflector at the rate of 320,000 gallons per minute. In this photo of the S-IC test stand, taken September 25, 1963, the flame deflector can be seen rotated to the outside on

  8. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In the early stages of excavation, a natural spring was disturbed that caused a water problem which required constant pumping from the site and is even pumped to this day. Behind this reservoir of pumped water is the S-IC test stand boasting its ever-growing four towers as of March 29, 1963.

  9. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the stand itself, related facilities were constructed during this time. Built northeast of the stand was a newly constructed Pump House. Its function was to provide water to the stand to prevent melting damage during testing. The water was sprayed through small holes in the stand's 1900 ton flame deflector at the rate of 320,000 gallons per minute. In this photo, taken September 5, 1963, the flame deflector is being installed in the S-IC test stand.

  10. SiC (SCS-6) Fiber Reinforced-Reaction Formed SiC Matrix Composites: Microstructure and Interfacial Properties

    NASA Technical Reports Server (NTRS)

    Singh, M.; Dickerson, R. M.; Olmstead, Forrest A.; Eldridge, J. I.

    1997-01-01

    Microstructural and interfacial characterization of unidirectional SiC (SCS-6) fiber reinforced-reaction formed SiC (RFSC) composites has been carried out. Silicon-1.7 at.% molybdenum alloy was used as the melt infiltrant, instead of pure silicon, to reduce the activity of silicon in the melt as well as to reduce the amount of free silicon in the matrix. Electron microprobe analysis was used to evaluate the microstructure and phase distribution in these composites. The matrix is SiC with a bi-modal grain-size distribution and small amounts of MoSi2, silicon, and carbon. Fiber push-outs tests on these composites showed that a desirably low interfacial shear strength was achieved. The average debond shear stress at room temperature varied with specimen thickness from 29 to 64 MPa, with higher values observed for thinner specimens. Initial frictional sliding stresses showed little thickness dependence with values generally close to 30 MPa. Push-out test results showed very little change when the test temperature was increased to 800 C from room temperature, indicating an absence of significant residual stresses in the composite.

  11. Long-Term Observation of Triplex Surgery for Cataract after Phakic 6H Implantation for Super High Myopia

    PubMed Central

    Liu, Xin; Wang, Xiaoying; Lu, Yi; Zheng, Tianyu; Zhou, Xingtao

    2016-01-01

    Purpose. To analyze the safety, effectiveness, and stability of triplex surgery for phakic 6H anterior chamber phakic intraocular lens explantation and phacoemulsification with in-the-bag IOL implantation for super high myopia in long-term observations. Methods. This retrospective case series evaluated 16 eyes of 10 patients who underwent triplex surgery. Best corrected visual acuity (BCVA), endothelial cell density (ECD), and associated adverse events were evaluated. Results. The mean follow-up time after the triplex surgery was 46 ± 14 months. The mean logMAR BCVA was significantly improved after triplex surgery (P = 0.047). One eye developed endophthalmitis five days postoperatively and underwent pars plana vitrectomy (PPV). Five eyes with preoperative severe endothelial cell loss developed corneal decompensation and underwent keratoplasty at a mean time of 9.4 ± 2.6 months after the triplex surgery. One eye had graft failure and underwent a second keratoplasty. The eye developed rhegmatogenous retinal detachment and underwent PPV with silicone oil 18 months later. ECD before the triplex surgery was not significantly different compared with that at last follow-up (P = 0.495) apart from these five eyes. Three eyes (18.8%) developed posterior capsule opacification. Conclusions. Triplex surgery was safe and effective for phakic 6H related complicated cataracts. Early extraction before severe ECD loss is recommended. PMID:27190642

  12. Synthesis and biological activity of cocaine analogues. 2. 6H-[2]Benzopyrano[4,3-c]pyridin-6-ones.

    PubMed

    Lazer, E S; Hite, G J; Nieforth, K A; Stratford, E S

    1979-07-01

    1,2,3,4-Tetrahydro-2-methyl-6H-[2]benzopyrano[4,3-c]pyridin-6-one (20) and cis- and trans-1,2,3,4,4a,10b-hexahydro-2-methyl-6H-[2]benzopyrano[4,3-c]pyridin-6-one (3a and 3b) were synthesized. The design of 3b was based on the proposal that the active conformation of cocaine is one in which the phenyl and amino groups are arranged in a manner that will superimpose upon a beta-phenethylamine in a trans-staggered conformation. The compounds were compared with cocaine and tropacocaine for their ability to inhibit uptake of [3H]norepinephrine by rat brain synaptosomal preparations. The test compounds (IC50 = 3.2 X 10(-4) M, 20; 6.5 X 10(-4) M, 3a; and 3.2 X 10(-4) M, 3b; respectively) were considerably weaker than cocaine (IC50 = 5.8 X 10(-7) M) and tropacocaine (IC50 = 5.6 X 10(-6) M). Compound 3b showed selectivity at 1 X 10(-5) M for inhibiting the uptake of norepinephrine (36%). It inhibited dopamine (3%) and serotonin (0%) uptake to a much lesser extent, if at all, at this concentration.

  13. [Synthesis and spectra of transition metals complexes RE3L6(NO3)6(H2O)2].

    PubMed

    Zhao, Qing-shan; Mao, Ju-lin; Zhou, Hui-liang; Hu, Qi-lin; Liu, Wan-yi

    2009-09-01

    Schiff base 4-(p-dimethylaminobenzaldehydeamino)-4H-1,2,4-triazole(L) was synthesized from 4-amino-1,2,4-triazole and p-dimethylaminobenzaldehyde using acetic acid as the catalyst. The solid complexes RE3L6(NO3)6(H2O)2 (RE = Cu, Co, Zn, Cd; x = 3-6) were synthesized with 4-(p-dimethylaminobenzaldehydeamino)-4H-1,2,4-triazole and nitrate of transition metals in ethanol and characterized by elemental analysis, infrared spectroscopy, UV spectrum, and fluorescence spectrum. Experimental results showed that the free ligand is a thermally stable material, and its ethanol solution emitted intense blue fluorescence at the peak wavelength of 416 nm. The absorption band at about 406 nm can be assigned to the intrinsic absorption of C==N. Compared with the fluorescence emission of free ligand in ethanol solution, the emission of the complex of RE3L6 (NO3)6(H2O)2 was red-shifted to 445 nm and narrow in solution. RE(II) was coordinated with N atomy of triazole in 4-(p-dimethylaminobenzaldehydeamino)-4H-1,2,4-triazole.

  14. Structural Consequences of Hydrogen Intercalation of Epitaxial Graphene on SiC(0001)

    DTIC Science & Technology

    2014-10-23

    Structural consequences of hydrogen intercalation of epitaxial graphene on SiC(0001) Jonathan D. Emery,1,a) Virginia H. Wheeler,2 James E. Johns,1...the interface between epitaxial graphene (EG) and its SiC substrate is known to significantly influence the electronic properties of the graphene ...from that of the overlying graphene layers. This newly formed graphene layer becomes decoupled from the SiC substrate and, along with the other graphene

  15. Vibrational spectra and dispersion analysis of K2Ni(SeO4)2·6H2O Tutton salt single crystal doped with K2Ni(SO4)2·6H2O

    NASA Astrophysics Data System (ADS)

    Ivanovski, Vladimir; Mayerhöfer, Thomas G.

    2013-10-01

    Dispersion analysis of the polarized IR reflectance spectra of K2Ni(SeO4)2·6H2O doped with K2Ni(SO4)2·6H2O has been performed. Vibrational parameters like oscillator strength, attenuation constant and frequency of the transversal phonons for the modes of Au symmetry type plus the orientation of the transition dipole moments for the modes of Bu symmetry type in the ac crystal plane have been obtained. The spectra-structure correlation of the H2O stretching vibrations show that bands appearing in the spectra for polarization of the external radiation oriented along the b axis are mainly due to the H2O stretching vibrations of one of the three crystallographically distinct sets of water molecules. The orientation of the transition dipoles of stretching vibrations of the selenate ion differ from the characteristic spectra of the sulfate analog in that no mutually perpendicular transition dipoles are found in the ac crystal plane. Water librational bands masked with the bands of the ν4(SO42-) mode in the sulfate analog have now been unveiled and assigned. The ratio between the oscillator strength and the attenuation constant appears to be a helpful tool in the assignment of the sulfate stretching vibrations and water librations. The vibrational and orientational characteristics of the ν4(SeO42-) modes were obtained. Тhe ν3(SO42-) frequency region of the isomorphously isolated SO42- ion in the K2Ni(SeO4)2·6H2O matrix was investigated in some detail. Contrary to the expected three, four bands can be identified. Three of them were assigned to ν3(SO42-) based on the orientation of the transition dipole moments. On the basis of the IR, but also Raman spectra of the pure and mixed crystals, a discussion of the influence of the potential field and the hydrogen bonds with the change in the volume of the unit cell is given.

  16. A new approach for transition metal free magnetic SiC: Defect induced magnetism after self-ion implantation

    NASA Astrophysics Data System (ADS)

    Kummari, Venkata Chandra Sekhar

    SiC has become an attractive wide bandgap semiconductor due to its unique physical and electronic properties and is widely used in high temperature, high frequency, high power and radiation resistant applications. SiC has been used as an alternative to Si in harsh environments such as in the oil industry, nuclear power systems, aeronautical, and space applications. SiC is also known for its polytypism and among them 3C-SiC, 4H-SiC and 6H-SiC are the most common polytypes used for research purposes. Among these polytypes 4H-SiC is gaining importance due to its easy commercial availability with a large bandgap of 3.26 eV at room temperature. Controlled creation of defects in materials is an approach to modify the electronic properties in a way that new functionality may result. SiC is a promising candidate for defect-induced magnetism on which spintronic devices could be developed. The defects considered are of room temperature stable vacancy types, eliminating the need for magnetic impurities, which easily diffuse at room temperature. Impurity free vacancy type defects can be created by implanting the host atoms of silicon or carbon. The implantation fluence determines the defect density, which is a critical parameter for defect induced magnetism. Therefore, we have studied the influence of low fluence low energy silicon and carbon implantation on the creation of defects in n-type 4H-SiC. The characterization of the defects in these implanted samples was performed using the techniques, RBS-channeling and Raman spectroscopy. We have also utilized these characterization techniques to analyze defects created in much deeper layers of the SiC due to implantation of high energy nitrogen ions. The experimentally determined depths of the Si damage peaks due to low energy (60 keV) Si and C ions with low fluences (< 1015 cm-2) are consistent with the SRIM-2011 simulations. From RBS-C Si sub-lattice measurements for different fluences (1.1x1014 cm-2 to 3.2x1014 cm-2 ) of Si

  17. SiC optics for EUV, UV, and visible space missions

    NASA Astrophysics Data System (ADS)

    Robichaud, Joseph L.

    2003-02-01

    An overview of silicon carbide (SiC) materials is provided, focusing on reaction bonded (RB) SiC and its properties. The Miniature Infrared Camera and Spectrometer (MICAS) and Advanced Land Imager (ALI) SiC space instruments produced by SSGPO and flown under NASA's New Millennium Program are described, and some of the mission requirements associated with UV and extreme UV (EUV) applications are reviewed. Manufacturing options associated with SiC reflectors are reviewed and the optical performance demonstrated with these materials is presented. In order to review the suitability of these materials to UV and EUV missions microroughness and surface scatter results are shown.

  18. High quality SiC microdisk resonators fabricated from monolithic epilayer wafers

    SciTech Connect

    Magyar, Andrew P.; Bracher, David; Lee, Jonathan C.; Hu, Evelyn L.; Aharonovich, Igor

    2014-02-03

    The exquisite mechanical properties of SiC have made it an important industrial material with applications in microelectromechanical devices and high power electronics. Recently, the optical properties of SiC have garnered attention for applications in photonics, quantum information, and spintronics. This work demonstrates the fabrication of microdisks formed from a p-N SiC epilayer material. The microdisk cavities fabricated from the SiC epilayer material exhibit quality factors of as high as 9200 and the approach is easily adaptable to the fabrication of SiC-based photonic crystals and other photonic and optomechanical devices.

  19. Review of data on irradiation creep of monolithic SiC

    SciTech Connect

    Garner, F.A.; Youngblood, G.E.; Hamilton, M.L.

    1996-04-01

    An effort is now underway to design an irradiation creep experiment involving SiC composites to SiC fibers. In order to successfully design such an experiment, it is necessary to review and assess the available data for monolithic SiC to establish the possible bounds of creep behavior for the composite. The data available show that monolithic SiC will indeed creep at a higher rate under irradiation compared to that of thermal creep, and surprisingly, it will do so in a temperature-dependant manner that is typical of metals.

  20. Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD

    NASA Astrophysics Data System (ADS)

    Liang, F.; Chen, P.; Zhao, D. G.; Jiang, D. S.; Zhao, Z. J.; Liu, Z. S.; Zhu, J. J.; Yang, J.; Liu, W.; He, X. G.; Li, X. J.; Li, X.; Liu, S. T.; Yang, H.; Liu, J. P.; Zhang, L. Q.; Zhang, Y. T.; Du, G. T.

    2016-09-01

    Photoelectron spectroscopy has been employed to analyze the content and chemical states of the elements on the surface of AlN films with different thickness, which are synthesized by metalorganic chemical vapor deposition on the n-type SiC substrates under low pressure. It is found that, besides the carbon and gallium on the AlN surface, the atom percentage of surface oxygen increases from 4.9 to 8.4, and the electron affinity also increases from 0.36 to 0.97 eV, when the thickness of AlN films increase from 50 to 400 nm. Furthermore, accompanying with the high-resolution XPS spectra of the O 1s, it is speculated that surface oxygen may be the major influence on the electron affinity, where the surface oxygen changes the surface chemical states through replacing N to form Al-O bond and Ga-O bond, although there are also a few of Ga and C contaminations in the chemical sate of Ga-O and C-C, respectively.

  1. MD-2 as the target of a novel small molecule, L6H21, in the attenuation of LPS-induced inflammatory response and sepsis

    PubMed Central

    Wang, Yi; Shan, Xiaoou; Chen, Gaozhi; Jiang, Lili; Wang, Zhe; Fang, Qilu; Liu, Xing; Wang, Jingying; Zhang, Yali; Wu, Wencan; Liang, Guang

    2015-01-01

    Background and Purpose Myeloid differentiation 2 (MD-2) recognizes LPS, which is required for TLR4 activation, and represents an attractive therapeutic target for severe inflammatory disorders. We previously found that a chalcone derivative, L6H21, could inhibit LPS-induced overexpression of TNF-α and IL-6 in macrophages. Here, we performed a series of biochemical experiments to investigate whether L6H21 specifically targets MD-2 and inhibits the interaction and signalling transduction of LPS-TLR4/MD-2. Experimental Approach The binding affinity of L6H21 to MD-2 protein was analysed using computer docking, surface plasmon resonance analysis, elisa, fluorescence measurements and flow cytometric analysis. The effects of L6H21 on MAPK and NF-κB signalling were determined using EMSA, fluorescence staining, Western blotting and immunoprecipitation. The anti-inflammatory effects of L6H21 were confirmed using elisa and RT-qPCR in vitro. The anti-inflammatory effects of L6H21 were also evaluated in septic C57BL/6 mice. Key Results Compound L6H21 inserted into the hydrophobic region of the MD-2 pocket, forming hydrogen bonds with Arg90 and Tyr102 in the MD-2 pocket. In vitro, L6H21 subsequently suppressed MAPK phosphorylation, NF-κB activation and cytokine expression in macrophages stimulated by LPS. In vivo, L6H21 pretreatment improved survival, prevented lung injury, decreased serum and hepatic cytokine levels in mice subjected to LPS. In addition, mice with MD-2 gene knockout were universally protected from the effects of LPS-induced septic shock. Conclusions and Implications Overall, this work demonstrated that the new chalcone derivative, L6H21, is a potential candidate for the treatment of sepsis. More importantly, the data confirmed that MD-2 is an important therapeutic target for inflammatory disorders. PMID:26076332

  2. The effect of structural defects in SiC particles on the static & dynamic mechanical response of a 15 volume percent SiC/6061-Al matrix composite

    SciTech Connect

    Vaidya, R.U.; Song, S.G.; Zurek, A.K.; Gray, G.T. III

    1995-09-01

    Static and Dynamic mechanical tests, and microstructural examinations performed on a SiC particle reinforced 6061-Al matrix composite indicated that particle cracking significantly affected the strength, strain hardening, and failure mechanism of the composite. Cracks were observed to nucleate and propagate on stacking faults and interfaces between the various phases within the reinforcing SiC particles. Planar defects were the predominant artifacts seen in the SiC particles. Partial dislocations were also observed bounding the stacking faults within the reinforcement phase.

  3. New phenylpropanoid and 6H-dibenzo[b,d]pyran-6-one derivatives from the stems of Dasymaschalon rostratum.

    PubMed

    Yu, Zhang-Xin; Niu, Zhi-Gang; Li, Xiao-Bao; Zheng, Cai-Juan; Song, Xin-Ming; Chen, Guang-Ying; Song, Xiao-Ping; Han, Chang-Ri; Wu, Shu-Xian

    2017-02-14

    Three new phenylpropanoid derivatives, dasymaroacid A (1), dasymaroesters B and C (2 and 3), and one new polyoxygenated 6H-dibenzo[b,d]pyran-6-one derivative dasymarolactone D (4), together with seven known compounds (5-11), were isolated from the stems of Dasymaschalon rostratum Merr. Compounds 1 and 2 are unusual phenylpropanoid derivatives with a polymethyl substituted cyclopentene conjugated diketone as a substituent, and 3 is a unique cinnamic acid detective with a polymethyl substituted cyclohexene conjugated triketone as a substituent. Their structures were elucidated by extensive spectroscopic methods and chemical method, and 4 was further confirmed by the single crystal X-ray diffraction method. Compounds 1-4 and 7 showed weak anti-HIV-1 activities with EC50 values ranged from 16.44 to 25.91μM.

  4. Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 C

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Beheim, Glenn M.; Okojie, Robert S.; Chang, Carl W.; Meredith, Roger D.; Ferrier, Terry L.; Evans, Laura J.; Krasowski, Michael J.; Prokop, Norman F.

    2008-01-01

    The fabrication and testing of the first semiconductor transistors and small-scale integrated circuits (ICs) to achieve up to 3000 h of stable electrical operation at 500 C in air ambient is reported. These devices are based on an epitaxial 6H-SiC junction field-effect transistor process that successfully integrated high temperature ohmic contacts, dielectric passivation, and ceramic packaging. Important device and circuit parameters exhibited less than 10% of change over the course of the 500 C operational testing. These results establish a new technology foundation for realizing durable 500 C ICs for combustion-engine sensing and control, deep-well drilling, and other harsh-environment applications.

  5. Deformation behaviour and 6H-LPSO structure formation at nanoindentation in lamellar high Nb containing TiAl alloy

    NASA Astrophysics Data System (ADS)

    Song, L.; Xu, X. J.; Peng, C.; Wang, Y. L.; Liang, Y. F.; Shang, S. L.; Liu, Z. K.; Lin, J. P.

    2015-02-01

    Microstructure and deformation mechanisms at a nanoindentation in the lamellar colony of high Nb containing TiAl alloy have been studied using the focused ion beam and the transmission electron microscopy. Considerable deformation twins are observed around the nanoindentation, and a strain gradient is generated. A continuous change in the bending angle of the lamellar structure can be derived, and a strain-induced grain refinement process is observed as various active deformations split the γ grains into subgrains. In addition to all possible deformation mechanisms (ordinary dislocation, super-dislocation and deformation twining) activated due to the heavy plastic deformation, a 6-layer hexagonal (6H) long-period stacking ordered structure is identified for the first time near the contact zone and is thought to be closely related to the glide of partial dislocations.

  6. Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

    SciTech Connect

    Lohrmann, A.; Klein, J. R.; Prawer, S.; McCallum, J. C.; Castelletto, S.; Ohshima, T.; Bosi, M.; Negri, M.; Johnson, B. C.

    2016-01-11

    In this work, we present the creation and characterisation of single photon emitters at the surface of 4H- and 6H-SiC, and of 3C-SiC epitaxially grown on silicon. These emitters can be created by annealing in an oxygen atmosphere at temperatures above 550 °C. By using standard confocal microscopy techniques, we find characteristic spectral signatures in the visible region. The excited state lifetimes are found to be in the nanosecond regime in all three polytypes, and the emission dipoles are aligned with the lattice. HF-etching is shown to effectively annihilate the defects and to restore an optically clean surface. The defects described in this work have ideal characteristics for broadband single photon generation in the visible spectral region at room temperature and for integration into nanophotonic devices.

  7. High power operation of a nitrogen doped, vanadium compensated, 6H-SiC extrinsic photoconductive switch

    SciTech Connect

    Sullivan, J. S.

    2014-04-28

    We report the high power operation of nitrogen doped, vanadium compensated, 6H-SiC, extrinsic photoconductive switches with improved vanadium and nitrogen dopant density. Photoconductive switching tests are performed on 1 mm thick, m-plane, switch substrates at switch voltage and currents up to 17 kV and 1.5 kA, respectively. Sub-ohm minimum switch on resistance is achieved for peak optical intensities ≥35 MW/cm{sup 2} at 532 nm applied to the switch facet. A reduction of greater than nine orders of magnitude is observed in switch material resistivity between dark and illuminated states.

  8. Positron lifetime studies on 8 MeV electron-irradiated n-type 6H silicon carbide

    NASA Astrophysics Data System (ADS)

    Lam, C. H.; Lam, T. W.; Ling, C. C.; Fung, S.; Beling, C. D.; De-Sheng, Hang; Huimin, Weng

    2004-11-01

    The positron lifetime technique was employed to study vacancy-type defects in 8 MeV electron-irradiated n-type 6H silicon carbide. A long-lifetime component having a characteristic lifetime of 223-232 ps was observed in the irradiated sample and was attributed to the VCVSi divacancy. Other positron traps, which dominated at low temperatures, were observed to compete with the VCVSi for trapping positrons. A positron trapping model involving a positron shallow trap, a negatively charged monovacancy and the VCVSi divacancy was found to give a good description of the temperature-dependent positron lifetime data of the 1200 °C annealed sample. The identity of the monovacancy could not be unambiguously determined, but its lifetime was found to be in the range 160-172 ps.

  9. Solvent effects on infrared spectra of progesterone in CHCl 3/ cyclo-C 6H 12 binary solvent systems

    NASA Astrophysics Data System (ADS)

    Liu, Qing; Wang, Xiao-yan; Zhang, Hui

    2007-01-01

    The infrared spectroscopy studies of the C 3 and C 20 carbonyl stretching vibrations ( υ(C dbnd O)) of progesterone in CHCl 3/ cyclo-C 6H 12 binary solvent systems were undertaken to investigate the solute-solvent interactions. With the mole fraction of CHC1 3 in the binary solvent mixtures increase, three types of C 3 and C 20 carbonyl stretching vibration band of progesterone are observed, respectively. The assignments of υ(C dbnd O) of progesterone are discussed in detail. In the CHCl 3-rich binary solvent systems or pure CHCl 3 solvent, two kinds of solute-solvent hydrogen bonding interactions coexist for C 20 C dbnd O. Comparisons are drawn for the solvent sensitivities of υ(C dbnd O) for acetophenone and 5α-androstan-3,17-dione, respectively.

  10. Growth of fcc(111) Dy multi-height islands on 6H-SiC(0001) graphene.

    PubMed

    Hershberger, M T; Hupalo, M; Thiel, P A; Tringides, M C

    2013-06-05

    Graphene based spintronic devices require an understanding of the growth of magnetic metals. Rare earth metals have large bulk magnetic moments so they are good candidates for such applications, and it is important to identify their growth mode. Dysprosium was deposited on epitaxial graphene, prepared by thermally annealing 6H-SiC(0001). The majority of the grown islands have triangular instead of hexagonal shapes. This is observed both for single layer islands nucleating at the top of incomplete islands and for fully completed multi-height islands. We analyze the island shape distribution and stacking sequence of successively grown islands to deduce that the Dy islands have fcc(111) structure, and that the triangular shapes result from asymmetric barriers to corner crossing.

  11. Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

    NASA Astrophysics Data System (ADS)

    Lohrmann, A.; Castelletto, S.; Klein, J. R.; Ohshima, T.; Bosi, M.; Negri, M.; Lau, D. W. M.; Gibson, B. C.; Prawer, S.; McCallum, J. C.; Johnson, B. C.

    2016-01-01

    In this work, we present the creation and characterisation of single photon emitters at the surface of 4H- and 6H-SiC, and of 3C-SiC epitaxially grown on silicon. These emitters can be created by annealing in an oxygen atmosphere at temperatures above 550 °C. By using standard confocal microscopy techniques, we find characteristic spectral signatures in the visible region. The excited state lifetimes are found to be in the nanosecond regime in all three polytypes, and the emission dipoles are aligned with the lattice. HF-etching is shown to effectively annihilate the defects and to restore an optically clean surface. The defects described in this work have ideal characteristics for broadband single photon generation in the visible spectral region at room temperature and for integration into nanophotonic devices.

  12. Thermochemistry and reaction paths in the oxidation reaction of benzoyl radical: C6H5C•(═O).

    PubMed

    Sebbar, Nadia; Bozzelli, Joseph W; Bockhorn, Henning

    2011-10-27

    Alkyl substituted aromatics are present in fuels and in the environment because they are major intermediates in the oxidation or combustion of gasoline, jet, and other engine fuels. The major reaction pathways for oxidation of this class of molecules is through loss of a benzyl hydrogen atom on the alkyl group via abstraction reactions. One of the major intermediates in the combustion and atmospheric oxidation of the benzyl radicals is benzaldehyde, which rapidly loses the weakly bound aldehydic hydrogen to form a resonance stabilized benzoyl radical (C6H5C(•)═O). A detailed study of the thermochemistry of intermediates and the oxidation reaction paths of the benzoyl radical with dioxygen is presented in this study. Structures and enthalpies of formation for important stable species, intermediate radicals, and transition state structures resulting from the benzoyl radical +O2 association reaction are reported along with reaction paths and barriers. Enthalpies, ΔfH298(0), are calculated using ab initio (G3MP2B3) and density functional (DFT at B3LYP/6-311G(d,p)) calculations, group additivity (GA), and literature data. Bond energies on the benzoyl and benzoyl-peroxy systems are also reported and compared to hydrocarbon systems. The reaction of benzoyl with O2 has a number of low energy reaction channels that are not currently considered in either atmospheric chemistry or combustion models. The reaction paths include exothermic, chain branching reactions to a number of unsaturated oxygenated hydrocarbon intermediates along with formation of CO2. The initial reaction of the C6H5C(•)═O radical with O2 forms a chemically activated benzoyl peroxy radical with 37 kcal mol(-1) internal energy; this is significantly more energy than the 21 kcal mol(-1) involved in the benzyl or allyl + O2 systems. This deeper well results in a number of chemical activation reaction paths, leading to highly exothermic reactions to phenoxy radical + CO2 products.

  13. Simulation and Experiment on Surface Morphology and Mechanical Properties Response in Nano-Indentation of 6H-SiC

    NASA Astrophysics Data System (ADS)

    Li, Chen; Zhang, Feihu; Meng, Binbin; Ma, Zhaokai

    2017-02-01

    The nano-indentation test for 6H-SiC is carried out with a Berkovich indenter. The indentation surface morphology is analyzed by SEM, which show that when the maximum load P max is 8 mN, there is only plastic deformation and no cracks on the surface of workpiece after unloading process, and when P max is 10 mN, there is the initiation of crack occurring on the surface of workpiece after unloading process. Based on the strain hardening model, the three-dimensional finite element method of nano-indentation for 6H-SiC is carried out. Simulation results show that in the unloading process the maximum stress and the maximum strain occur in the contact area between the workpiece with the indenter edges, which is consistent with the experimental results. When propagate to the surface from the subsurface, the cracks are subjected to the type I stress and the type II stress due to elastic recovery. After propagating to surface of workpiece, the cracks propagate along a fixed direction because the proportion of type I stress is much larger than that of type II stress. The influence of the cleavage plane on the propagation direction of cracks is obvious. The cracks propagate more easily when the indenter edges are along cleavage plane. The indentation depth and residual depth increase with the increase of P max. While, the elastic recovery rate gradually decreases and tends to be stable with the increase of P max. When P max is <10 mN, the micro-hardness and the elastic modulus increase linearly with the increase of P max. When P max exceeds 10 mN, the micro-hardness decreases with the increase of P max and then gradually tends to be stable, and the elastic modulus increases by power function with the increase of P max and then gradually tends to be stable.

  14. UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC

    NASA Astrophysics Data System (ADS)

    Benjamin, M. C.; Bremser, M. D.; Weeks, T. W.; King, S. W.; Davis, R. F.; Nemanich, R. J.

    1996-09-01

    This study presents results of UV photoemission measurements of the surface and interface properties of heteroepitaxial AlGaN on 6H-SiC. Previous results have demonstrated a negative electron affinity of AlN on 6H-SiC. In this study Al xGa 1- xN alloy films were grown by organometallic vapor phase epitaxy (OMVPE) and doped with silicon. The analytical techniques included UPS, Auger electron spectroscopy, and LEED. All analysis took place in an integrated UHV transfer system which included the analysis techniques, a surface processing chamber and a gas source MBE. The OMVPE alloy samples were transported in air to the surface characterization system while the AlN and GaN investigations were prepared in situ. The surface electronic states were characterized by surface normal UV photoemission to determine whether the electron affinity was positive or negative. Two aspects of the photoemission distinguish a surface that exhibits a NEA: (1) the spectrum exhibits a sharp peak in the low kinetic energy region, and (2) the width of the spectrum is hv - Eg. The in situ prepared AlN samples exhibited the characteristics of a NEA while the GaN and Al 0.13Ga 0.87N samples did not. The Al 0.55Ga 0.45N sample shows a low positive electron affinity. Annealing of the sample to > 400°C resulted in the disappearance of the sharp emission features, and this effect was related to contaminant effects on the surface. The results suggest the potential of nitride based cold cathode electron emitters.

  15. Deep level transient spectroscopy study of particle irradiation induced defects in n-6H-SiC

    NASA Astrophysics Data System (ADS)

    Chen, X. D.; Gong, M.; Fung, S.; Beling, C. D.; Ling, C. C.

    2004-03-01

    Neutron and electron irradiation induced deep level defects in n-type 6H-SiC have been investigated using deep level transient spectroscopy (DLTS) combined with annealing experiments. Deep levels ED1, E1/E2, Ei, and Z1/Z2 were observed in n-type 6H-SiC material irradiated with neutron. Thermal annealing studies of these deep levels revealed that ED1 and Ei annealed at a temperature below 350^oC, Z1/Z2 levels annealed out at 900^oC, while the intensity of the E1/E2 peaks increased with annealing temperature, reached a maximum at about 500-750^oC, and finally annealed out at 1400^oC. Upon further annealing at 1600^oC, four deep levels labeled NE1 at EC-0.44eV, NE2 EC-0.53eV, NE3 EC-0.64eV, and NE4 EC-0.68eV are produced. Ionization energies of these levels are similar to E1/E2 and Z1/Z2 respectively, but their capture cross sections are different. Samples were irradiated with electrons with different energies ranging from 0.2MeV to 1.7MeV. No deep level was detected in samples irradiated with 0.2MeV electron and deep levels ED1, E1/E2, and Ei were induced with electron energy larger than 0.3MeV.

  16. Electronic states of the C6H6/Cu{111} system: Energetics, femtosecond dynamics, and adsorption morphology

    NASA Astrophysics Data System (ADS)

    Velic, D.; Hotzel, A.; Wolf, M.; Ertl, G.

    1998-11-01

    Two-photon-photoemission (2PPE) spectroscopy is employed to characterize electronic states of a bilayer C6H6/Cu{111} system at 85 K. The unoccupied benzene π* e2u state is observed with a binding energy of 4.6 eV above the Fermi level. This result agrees with inverse-photoemission (IPE) data and provides a case where the determination of the binding energy is identical for 2PPE and IPE. The π* e2u state is assigned in the 2PPE scheme as a final state which is the first observed final state in 2PPE of adsorbate-surface systems. The dependence of the electron dynamics on the morphology of an incomplete adsorption layer is also investigated. Two (n=1)-like image potential states A and B are observed which presumably originate from two different C6H6 adsorption geometries in the bilayer regime. The two image states A and B are characterized by electron effective masses of 1.1 and 1.9 me, binding energies of 3.30 and 3.45 eV above the Fermi level, and lifetimes of 40 and 20 fs, respectively. The dielectric continuum model and the Kronig-Penney model are employed to simulate the origin of (n=1)-like image states. The work function decreases from 4.9 eV at clean Cu{111} to 4.0 eV at bilayer coverage. The change of the work function and the observation of two image states suggest the redefining of the ratio of the numbers of benzene molecules in the first and the second layers of the bilayer regime to approximately 1:1 instead of 1:2, as previously reported. 2PPE is shown to be sensitive to the changes of morphologies, local work functions, and adsorbate-surface potentials during the layer formation.

  17. Processing of laser formed SiC powder

    NASA Technical Reports Server (NTRS)

    Haggerty, J. S.; Bowen, H. K.

    1985-01-01

    Superior SiC characteristics can be achieved through the use of ideal constituent powders and careful post-synthesis processing steps. High purity SiC powders of approx. 1000 A uniform diameter, nonagglomerated and spherical were produced. This required major revision of the particle formation and growth model from one based on classical nucleation and growth to one based on collision and coalescence of Si particles followed by their carburization. Dispersions based on pure organic solvents as well as steric stabilization were investigated. Although stable dispersions were formed by both, subsequent part fabrication emphasized the pure solvents since fewer problems with drying and residuals of the high purity particles were anticipated. Test parts were made by the colloidal pressing technique; both liquid filtration and consolidation (rearrangement) stages were modeled. Green densities corresponding to a random close packed structure (approx. 63%) were achieved; this highly perfect structure has a high, uniform coordination number (greater than 11) approaching the quality of an ordered structure without introducing domain boundary effects. After drying, parts were densified at temperatures ranging from 1800 to 2100 C. Optimum densification temperatures will probably be in the 1900 to 2000 C range based on these preliminary results which showed that 2050 C samples had experienced substantial grain growth. Although overfired, the 2050 C samples exhibited excellent mechanical properties. Biaxial tensile strengths up to 714 MPa and Vickers hardness values of 2430 kg/sq mm 2 were both more typical of hot pressed than sintered SiC. Both result from the absence of large defects and the confinement of residual porosity (less than 2.5%) to small diameter, uniformly distributed pores.

  18. Amorphization and dynamic annealing of hexagonal SiC upon heavy-ion irradiation: Effects on swelling and mechanical properties

    SciTech Connect

    Kerbiriou, Xavier; Costantini, Jean-Marc; Sauzay, Maxime; Sorieul, Stephanie; Thome, Lionel

    2009-04-01

    Structural, mechanical, and dimensional evolutions of silicon carbide (SiC) induced by heavy-ion irradiations are studied by means of Rutherford backscattering spectrometry and channeling (RBS/C), nanoindentation, and surface profilometry measurements. 4H- and 6H-SiC single crystals were irradiated with 4 MeV Au{sup 2+} and 4 MeV Xe{sup +} ions at room temperature (RT) or 400 deg. C. Using a Monte Carlo program to simulate the RBS/C spectra (MCCHASY code), we find that Au ion irradiation at RT induces a total silicon sublattice disorder related to full amorphization at a dose of about 0.4 displacement per atom (dpa). A two-step damage process is found on the basis of the disordered fractions deduced from RBS/C data. Complete amorphization cannot be reached upon both Au and Xe ion irradiations at 400 deg. C up to about 26 dpa because of the dynamic annealing of defects. When complete amorphization is reached at RT, the Young's modulus and Berkovich hardness of irradiated 6H-SiC samples are lower by, respectively, 40% and 45% than those of the virgin crystals. The out-of-plane expansion measured by surface profilometry increases versus irradiation dose and the saturation value measured in the completely amorphous layer (normalized to the ion projected range) is close to 25%. We show that the modifications of the macroscopic properties are mainly due to the amorphization of the material. The macroscopic elasticity constants and dimensional properties are predicted for a composite material made of crystalline matrix containing dispersed amorphous inclusions using simple analytical homogenization models. Voigt's model seems to give the best approximation for disordered fractions larger than 20% in the second step of the damage process.

  19. Corrosion Behavior of SiC Reinforced Aluminum Alloys

    DTIC Science & Technology

    1987-09-25

    observed for AA- 7075 -T6. Microscopic examination of the sur- faces showed that pitting behavior was nearly identical to that observed for the 6061...of the MMC was a dark grey which may indicate that the surface oxide was thicker. The anodic behavior of SiC/AA- 7075 -T6 and AA- 7075 -T6 sug- gested...m-- - osION BEHAVIOR OF SIC REINFORCED ALUMINUM ALLOYS (N) 0 BY J. F. MulNTYRE A. H. LE . GOLLEDGE R. CONRAD RESEARCH AND TECHNOLOGY DEPARTMENT 25

  20. Ultra High Temperature (UHT) SiC Fiber (Phase 2)

    NASA Technical Reports Server (NTRS)

    Dicarlo, James A.; Jacobson, Nathan S.; Lizcano, Maricela; Bhatt, Ramakrishna T.

    2015-01-01

    Silicon-carbide fiber-reinforced silicon-carbide ceramic matrix composites (SiCSiC CMC) are emerginglightweight re-usable structural materials not only for hot section components in gas turbine engines, but also for controlsurfaces and leading edges of reusable hypersonic vehicles as well as for nuclear propulsion and reactor components. Ithas been shown that when these CMC are employed in engine hot-section components, the higher the upper usetemperature (UUT) of the SiC fiber, the more performance benefits are accrued, such as higher operating temperatures,reduced component cooling air, reduced fuel consumption, and reduced emissions. The first generation of SiCSiC CMC with a temperature capability of 2200-2400F are on the verge of being introduced into the hot-section components ofcommercial and military gas turbine engines.Today the SiC fiber type currently recognized as the worlds best in terms ofthermo-mechanical performance is the Sylramic-iBN fiber. This fiber was previously developed by the PI at NASA GRC using patented processes to improve the high-cost commercial Sylramic fiber, which in turn was derived from anotherlow-cost low-performance commercial fiber. Although the Sylramic-iBN fiber shows state-of-the art creep and rupture resistance for use temperatures above 2550oF, NASA has shown by fundamental creep studies and model developmentthat its microstructure and creep resistance could theoretically be significantly improved to produce an Ultra HighTemperature (UHT) SiC fiber.This Phase II Seedling Fund effort has been focused on the key objective of effectively repeating the similar processes used for producing the Sylramic-iBN fiber using a design of experiments approach to first understand the cause of the less than optimum Sylramic-iBN microstructure and then attempting to develop processconditions that eliminate or minimize these key microstructural issues. In so doing, it is predicted that that theseadvanced process could result in an UHT SiC

  1. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1961-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo shows the construction progress of the test stand as of August 14, 1961. Water gushing in from the disturbance of a natural spring contributed to constant water problems during the construction process. It was necessary to pump water from the site on a daily basis and is still pumped from the site today. The equipment is partially submerged in the water emerging from the spring.

  2. Plastic deformation of alumina reinforced with SiC whiskers

    SciTech Connect

    DeArellano-Lopez, A.R.; Dominguez-Rodriguez, A.; Goretta, K.C.; Routbort, J.L.

    1993-06-01

    Addition of small amounts of stiff reinforcement (SiC whiskers) to a polycrystalline AL{sub 2}O{sub 3} matrix partially inhibits grain boundary sliding because of an increase in threshold stress. When the concentration of whiskers is high enough, a pure diffusional mechanism takes over the control of plastic deformation of the composites. For higher whisker loadings, the materials creep properties depend on a microstructural feature different from the nominal grain size. A tentative correlation of this effective microstructural parameter with the spacing between the whiskers was established through a model.

  3. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1961-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. This photo, taken September 5, 1961, shows the construction of forms which became the concrete foundation for the massive stand. The lower right hand corner reveals a pump used for extracting water emerging from a disturbed natural spring that occurred during excavation of the site. The pumping became a daily ritual and the site is still pumped today.

  4. Construction Progress of S-IC Test Stand Pump House

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the stand itself, related facilities were constructed during this time. Built to the northeast east was a newly constructed Pump House. Its function was to provide water to the stand to prevent melting damage during testing. The water was sprayed through small holes in the stand's 1900 ton flame deflector at the rate of 320,000 gallons per minute. This photograph of the Pump House area was taken August 13, 1963. The massive round water storage tanks can be seen to the left of

  5. Construction Progress S-IC Test Stand Block House Interior

    NASA Technical Reports Server (NTRS)

    1963-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. In addition to the stand itself, related facilities were constructed during this time. Built directly east of the test stand was the Block House, which served as the control center for the test stand. The two were connected by a narrow access tunnel which housed the cables for the controls. This photograph, taken August 12, 1963, offers a view of the Block House interior.

  6. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1962-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. After a six month delay in construction due to size reconfiguration of the Saturn booster, the site was revisited for modifications in March 1962. The original foundation walls built in the prior year were torn down and re-poured to accommodate the larger boosters. This photo depicts that modification progress as of June 13,1962.

  7. Construction Progress of the S-IC Test Stand

    NASA Technical Reports Server (NTRS)

    1962-01-01

    At its founding, the Marshall Space Flight Center (MSFC) inherited the Army's Jupiter and Redstone test stands, but much larger facilities were needed for the giant stages of the Saturn V. From 1960 to 1964, the existing stands were remodeled and a sizable new test area was developed. The new comprehensive test complex for propulsion and structural dynamics was unique within the nation and the free world, and they remain so today because they were constructed with foresight to meet the future as well as on going needs. Construction of the S-IC Static test stand complex began in 1961 in the west test area of MSFC, and was completed in 1964. The S-IC static test stand was designed to develop and test the 138-ft long and 33-ft diameter Saturn V S-IC first stage, or booster stage, weighing in at 280,000 pounds. Required to hold down the brute force of a 7,500,000-pound thrust produced by 5 F-1 engines, the S-IC static test stand was designed and constructed with the strength of hundreds of tons of steel and 12,000,000 pounds of cement, planted down to bedrock 40 feet below ground level. The foundation walls, constructed with concrete and steel, are 4 feet thick. The base structure consists of four towers with 40-foot-thick walls extending upward 144 feet above ground level. The structure was topped by a crane with a 135-foot boom. With the boom in the upright position, the stand was given an overall height of 405 feet, placing it among the highest structures in Alabama at the time. After a 6 month delay in construction due to size reconfiguration of the Saturn booster, the site was revisited for modifications. The original foundation walls built in the prior year had to be torn down and re-poured to accommodate the larger booster. The demolition can be seen in this photograph taken on May 21, 1962.

  8. Iron and Nickel Isotope Measurements on SiC X Grains with CHILI

    NASA Astrophysics Data System (ADS)

    Kodolányi, J.; Stephan, T.; Trappitsch, R.; Hoppe, P.; Pignatari, M.; Davis, A. M.; Pellin, M. J.

    2016-08-01

    New measurements with CHILI on SiC X grains provide more detailed Fe and Ni isotope data than previous NanoSIMS analyses. The new data suggest that Fe-Ni fractionation may occur in supernova ejecta before SiC condensation.

  9. First-principles prediction of stable SiC cage structures and their synthesis pathways

    NASA Astrophysics Data System (ADS)

    Pochet, Pascal; Genovese, Luigi; Caliste, Damien; Rousseau, Ian; Goedecker, Stefan; Deutsch, Thierry

    2010-07-01

    In this paper we use density functional theory calculations to investigate the structure and the stability of different SiC cagelike clusters. In addition to the fullerene family and the mixed four and six membered ring family, we introduce a family based on reconstructed nanotube slices. We propose an alternative synthesis pathway starting from SiC nanotubes.

  10. Highly flexible, nonflammable and free-standing SiC nanowire paper.

    PubMed

    Chen, Jianjun; Liao, Xin; Wang, Mingming; Liu, Zhaoxiang; Zhang, Judong; Ding, Lijuan; Gao, Li; Li, Ye

    2015-04-14

    Flexible paper-like semiconductor nanowire materials are expected to meet the criteria for some emerging applications, such as components of flexible solar cells, electrical batteries, supercapacitors, nanocomposites, bendable or wearable electronic or optoelectronic components, and so on. As a new generation of wide-bandgap semiconductors and reinforcements in composites, SiC nanowires have advantages in power electronic applications and nanofiber reinforced ceramic composites. Herein, free-standing SiC nanowire paper consisting of ultralong single-crystalline SiC nanowires was prepared through a facile vacuum filtration approach. The ultralong SiC nanowires were synthesized by a sol-gel and carbothermal reduction method. The flexible paper composed of SiC nanowires is ∼100 nm in width and up to several hundreds of micrometers in length. The nanowires are intertwisted with each other to form a three-dimensional network-like structure. SiC nanowire paper exhibits high flexibility and strong mechanical stability. The refractory performance and thermal stability of SiC nanowire paper were also investigated. The paper not only exhibits excellent nonflammability in fire, but also remains well preserved without visible damage when it is heated in an electric oven at a high temperature (1000 °C) for 3 h. With its high flexibility, excellent nonflammability, and high thermal stability, the free-standing SiC nanowire paper may have the potential to improve the ablation resistance of high temperature ceramic composites.

  11. Porous SiC nanowire arrays as stable photocatalyst for water splitting under UV irradiation

    SciTech Connect

    Liu, Hailong; She, Guangwei; Mu, Lixuan; Shi, Wensheng

    2012-03-15

    Highlights: Black-Right-Pointing-Pointer Arrays of porous SiC nanowires prepared by a facile in situ carbonizing method. Black-Right-Pointing-Pointer Utilizing the SiC nanowire arrays as photocatalysis for water splitting. Black-Right-Pointing-Pointer Excellent photocatalytic performance under the UV irradiation. Black-Right-Pointing-Pointer Very high stability of the SiC nanowire photocatalyst. -- Abstract: In this study, we report the fabrication and photocatalytic properties of the oriented arrays of SiC nanowires on the Si substrate. The SiC nanowire arrays were prepared by carbonizing the Si nanowire arrays with the graphite powder at 1250 Degree-Sign C. The as-prepared SiC nanowires are highly porous, which endows them with a high surface-to-volume ratio. Considering the large surface areas and the high stability, the porous SiC nanowire arrays were used as photocatalyst for water splitting under UV irradiation. It was found that such porous SiC structure exhibited an enhanced and extremely stable photocatalytic performance.

  12. Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique.

    PubMed

    Bao, Jianfeng; Norimatsu, Wataru; Iwata, Hiroshi; Matsuda, Keita; Ito, Takahiro; Kusunoki, Michiko

    2016-11-11

    Graphene has a negative thermal expansion coefficient; that is, when heated, the graphene lattice shrinks. On the other hand, the substrates typically used for graphene growth, such as silicon carbide, have a positive thermal expansion coefficient. Hence, on cooling graphene on SiC, graphene expands but SiC shrinks. This mismatch will physically break the atomic bonds between graphene and SiC. We have demonstrated that a graphenelike buffer layer on SiC can be converted to a quasifreestanding monolayer graphene by a rapid-cooling treatment. The decoupling of graphene from the SiC substrate was actually effective for reducing the electric carrier scattering due to interfacial phonons. In addition, the rapidly cooled graphene obtained in this way was of high-quality, strain-free, thermally stable, and strongly hole doped. This simple, classical, but quite novel technique for obtaining quasifreestanding graphene could open a new path towards a viable graphene-based semiconductor industry.

  13. Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique

    NASA Astrophysics Data System (ADS)

    Bao, Jianfeng; Norimatsu, Wataru; Iwata, Hiroshi; Matsuda, Keita; Ito, Takahiro; Kusunoki, Michiko

    2016-11-01

    Graphene has a negative thermal expansion coefficient; that is, when heated, the graphene lattice shrinks. On the other hand, the substrates typically used for graphene growth, such as silicon carbide, have a positive thermal expansion coefficient. Hence, on cooling graphene on SiC, graphene expands but SiC shrinks. This mismatch will physically break the atomic bonds between graphene and SiC. We have demonstrated that a graphenelike buffer layer on SiC can be converted to a quasifreestanding monolayer graphene by a rapid-cooling treatment. The decoupling of graphene from the SiC substrate was actually effective for reducing the electric carrier scattering due to interfacial phonons. In addition, the rapidly cooled graphene obtained in this way was of high-quality, strain-free, thermally stable, and strongly hole doped. This simple, classical, but quite novel technique for obtaining quasifreestanding graphene could open a new path towards a viable graphene-based semiconductor industry.

  14. The first muon beam from a new highly-intense DC muon source, MuSIC

    NASA Astrophysics Data System (ADS)

    Tran, Nam Hoai; MuSIC Collaboration

    2012-09-01

    A new DC muon source, MuSIC, is now under construction at Research Center for Nuclear Physics (RCNP), Osaka University, Japan. The MuSIC adopts a new pion/muon collection system and a curved transport solenoid. These techniques are important in realization of future muon programs such as the muon to electron conversion experiments (COMET/Mu2e), neutrino factories, and muon colliders. The pion capture magnet and a part of the transport solenoid have been built and beam tests were carried out to assess the MuSIC's performance. Muon lifetime measurements and muonic X-ray measurements have been used for estimation of muon yield of the MuSIC. The result indicates that the MuSIC would be one of the most intense DC muon beams in the world.

  15. The role of Pd in the transport of Ag in SiC

    NASA Astrophysics Data System (ADS)

    Olivier, E. J.; Neethling, J. H.

    2013-01-01

    This paper presents results in support of a newly proposed transport mechanism to account for the release of Ag from intact TRISO particles during HTR reactor operation. The study reveals that the migration of Ag in polycrystalline SiC can occur in association with Pd, a relatively high yield metallic fission product. The migration takes place primarily along grain boundary routes, seen in the form of distinct Pd, Ag and Si containing nodules. Pd is known to rapidly migrate to the SiC and iPyC interface within TRISO particles during operation. It has been shown to chemically corrode the SiC to form palladium silicides. These palladium silicides are found present along SiC grain boundaries in nodule like form. It is suggested that Ag penetrates these nodules together with the palladium silicide, to form a Pd, Ag and Si solution capable of migrating along SiC grain boundaries over time.

  16. Mechanical and microstructural characterization of Al7075/SiC nanocomposites fabricated by dynamic compaction

    NASA Astrophysics Data System (ADS)

    Atrian, A.; Majzoobi, G. H.; Enayati, M. H.; Bakhtiari, H.

    2014-03-01

    This paper describes the synthesis of Al7075 metal matrix composites reinforced with SiC, and the characterization of their microstructure and mechanical behavior. The mechanically milled Al7075 micron-sized powder and SiC nanoparticles are dynamically compacted using a drop hammer device. This compaction is performed at different temperatures and for various volume fractions of SiC nanoparticles. The relative density is directly related to the compaction temperature rise and indirectly related to the content of SiC nanoparticle reinforcement, respectively. Furthermore, increasing the amount of SiC nanoparticles improves the strength, stiffness, and hardness of the compacted specimens. The increase in hardness and strength may be attributed to the inherent hardness of the nanoparticles, and other phenomena such as thermal mismatch and crack shielding. Nevertheless, clustering of the nanoparticles at aluminum particle boundaries make these regions become a source of concentrated stress, which reduces the load carrying capacity of the compacted nanocomposite.

  17. A NEW TYPE OF SIC COMPOSITE FOR FUSION

    SciTech Connect

    Youngblood, Gerald E.; Jones, Russell H.

    2001-04-01

    A new type of SiC composite called Tyrannohex™ is potentially suitable as a fusion reactor structural material. Tyrannohex™ composite plates are made by hot-pressing layups of Tyranno™ SA precursor fibers into various 1D and 2D configurations. The fiber-bonded composite plates contain nearly 100% fiber volume, so take advantage of the outstanding high temperature strength and creep properties of the Tyranno™ SA fiber, a nearly stoichiometric SiC fiber. The hot-pressed plates are dense, strong, rigid, tough, thermally conductive and have high temperature stability. The microstructure and thermal conductivity of a SA-Tyrannohex™ material with a 2D-woven configuration was evaluated prior to irradiation testing. The microstructure contained some small, flat interlaminar pores and intrabundle needle-like pores, and the transverse thermal conductivity was 25 and 21 W/mK at ambient and 1000°C, respectively. These results suggest that careful control of the fiber-bonded interlayers and the fiber architecture are critical to achieve both high thermal conductivity and toughness in Tyrannohex™ type materials.

  18. Cohort profile: the Social Inequality in Cancer (SIC) cohort study.

    PubMed

    Nordahl, Helene; Hvidtfeldt, Ulla Arthur; Diderichsen, Finn; Rod, Naja Hulvej; Osler, Merete; Frederiksen, Birgitte Lidegaard; Prescott, Eva; Tjønneland, Anne; Lange, Theis; Keiding, Niels; Andersen, Per Kragh; Andersen, Ingelise

    2014-12-01

    The Social Inequality in Cancer (SIC) cohort study was established to determine pathways through which socioeconomic position affects morbidity and mortality, in particular common subtypes of cancer. Data from seven well-established cohort studies from Denmark were pooled. Combining these cohorts provided a unique opportunity to generate a large study population with long follow-up and sufficient statistical power to develop and apply new methods for quantification of the two basic mechanisms underlying social inequalities in cancer-mediation and interaction. The SIC cohort included 83 006 participants aged 20-98 years at baseline. A wide range of behavioural and biological risk factors such as smoking, physical inactivity, alcohol intake, hormone replacement therapy, body mass index, blood pressure and serum cholesterol were assessed by self-administered questionnaires, physical examinations and blood samples. All participants were followed up in nationwide demographic and healthcare registries. For those interested in collaboration, further details can be obtained by contacting the Steering Committee at the Department of Public Health, University of Copenhagen, at inan@sund.ku.dk.

  19. Synthesis and characterization of SiC whiskers

    SciTech Connect

    Wang, L.; Wada, H. ); Allard, L.F. )

    1992-01-01

    SiC whiskers were synthesized by the carbothermal reduction of silica with an addition of halide (3NaF{center dot}AlF{sub 3} or NaF) as an auxiliary bath. The whiskers were {beta} phase (3C) and grew in the (111) direction. Three distinctive morphologies were observed: (1) Type A: thin and straight; (2) Type B: thick and bamboo-like; and (3) Type C: thick, straight, and smooth. Type A whiskers contained a high density of basal plane (111) stacking faults along their entire length, whereas Type B whiskers showed periodic changes between stacking faults and well-defined single crystals. Type C whiskers showed stacking faults on the other {l brace}111{r brace} planes instead of on the basal (111) plane. Silica formed molten fluorosilicate with halide and SiC grew via a vapor-solid reaction mechanism through gaseous SiO. These reactions can be expressed as (SiO{sub 2})+C(s)=SiO(g)+CO(g) and SiO(g)+3CO(g)=SiC(s)+2CO{sub 2}(g). The effects of processing parameters on the morphology and size of the whiskers were examined and the relationship between the morphological development of the whiskers and the stacking fault energy was determined.

  20. Processing of laser formed SiC powder

    NASA Technical Reports Server (NTRS)

    Haggerty, J. S.; Bowen, H. K.

    1987-01-01

    Processing research was undertaken to demonstrate that superior SiC characteristics could be achieved through the use of ideal constituent powders and careful post-synthesis processing steps. Initial research developed the means to produce approximately 1000 A uniform diameter, nonagglomerated, spherical, high purity SiC powders. Accomplishing this goal required major revision of the particle formation and growth model from one based on classical nucleation and growth to one based on collision and coalescence of Si particles followed by their carburization. Dispersions based on pure organic solvents as well as steric stabilization were investigated. Test parts were made by the colloidal pressing technique; both liquid filtration and consolidation (rearrangement) stages were modeled. Green densities corresponding to a random close packed structure were achieved. After drying, parts were densified at temperatures ranging from 1800 to 2100 C. This research program accomplished all of its major objectives. Superior microstructures and properties were attained by using powders having ideal characteristics and special post-synthesis processing procedures.

  1. Creep behavior for advanced polycrystalline SiC fibers

    SciTech Connect

    Youngblood, G.E.; Jones, R.H.; Kohyama, Akira

    1997-08-01

    A bend stress relaxation (BSR) test is planned to examine irradiation enhanced creep in polycrystalline SiC fibers which are under development for use as fiber reinforcement in SiC/SiC composite. Baseline 1 hr and 100 hr BSR thermal creep {open_quotes}m{close_quotes} curves have been obtained for five selected advanced SiC fiber types and for standard Nicalon CG fiber. The transition temperature, that temperature where the S-shaped m-curve has a value 0.5, is a measure of fiber creep resistance. In order of decreasing thermal creep resistance, with the 100 hr BSR transition temperature given in parenthesis, the fibers ranked: Sylramic (1261{degrees}C), Nicalon S (1256{degrees}C), annealed Hi Nicalon (1215{degrees}C), Hi Nicalon (1078{degrees}C), Nicalon CG (1003{degrees}C) and Tyranno E (932{degrees}C). The thermal creep for Sylramic, Nicalon S, Hi Nicalon and Nicalon CG fibers in a 5000 hr irradiation creep BSR test is projected from the temperature dependence of the m-curves determined during 1 and 100 hr BSR control tests.

  2. Atom-scale covalent electrochemical modification of single-layer graphene on SiC substrates by diaryliodonium salts

    DOE PAGES

    Gearba, Raluca I.; Mueller, Kory M.; Veneman, Peter A.; ...

    2015-05-09

    Owing to its high conductivity, graphene holds promise as an electrode for energy devices such as batteries and photovoltaics. However, to this end, the work function and doping levels in graphene need to be precisely tuned. One promising route for modifying graphene’s electronic properties is via controlled covalent electrochemical grafting of molecules. We show that by employing diaryliodonium salts instead of the commonly used diazonium salts, spontaneous functionalization is avoided. This then allows for precise tuning of the grafting density. Moreover, by employing bis(4-nitrophenyl)iodonium(III) tetrafluoroborate (DNP) salt calibration curves, the surface functionalization density (coverage) of glassy carbon was controlled usingmore » cyclic voltammetry in varying salt concentrations. These electro-grafting conditions and calibration curves translated directly over to modifying single layer epitaxial graphene substrates (grown on insulating 6H-SiC (0 0 0 1)). In addition to quantifying the functionalization densities using electrochemical methods, samples with low grafting densities were characterized by low-temperature scanning tunneling microscopy (LT-STM). We show that the use of buffer-layer free graphene substrates is required for clear observation of the nitrophenyl modifications. Furthermore, atomically-resolved STM images of single site modifications were obtained, showing no preferential grafting at defect sites or SiC step edges as supposed previously in the literature. Most of the grafts exhibit threefold symmetry, but occasional extended modifications (larger than 4 nm) were observed as well.« less

  3. Atom-scale covalent electrochemical modification of single-layer graphene on SiC substrates by diaryliodonium salts

    SciTech Connect

    Gearba, Raluca I.; Mueller, Kory M.; Veneman, Peter A.; Holliday, Bradley J.; Chan, Calvin K.; Stevenson, Keith J.

    2015-05-09

    Owing to its high conductivity, graphene holds promise as an electrode for energy devices such as batteries and photovoltaics. However, to this end, the work function and doping levels in graphene need to be precisely tuned. One promising route for modifying graphene’s electronic properties is via controlled covalent electrochemical grafting of molecules. We show that by employing diaryliodonium salts instead of the commonly used diazonium salts, spontaneous functionalization is avoided. This then allows for precise tuning of the grafting density. Moreover, by employing bis(4-nitrophenyl)iodonium(III) tetrafluoroborate (DNP) salt calibration curves, the surface functionalization density (coverage) of glassy carbon was controlled using cyclic voltammetry in varying salt concentrations. These electro-grafting conditions and calibration curves translated directly over to modifying single layer epitaxial graphene substrates (grown on insulating 6H-SiC (0 0 0 1)). In addition to quantifying the functionalization densities using electrochemical methods, samples with low grafting densities were characterized by low-temperature scanning tunneling microscopy (LT-STM). We show that the use of buffer-layer free graphene substrates is required for clear observation of the nitrophenyl modifications. Furthermore, atomically-resolved STM images of single site modifications were obtained, showing no preferential grafting at defect sites or SiC step edges as supposed previously in the literature. Most of the grafts exhibit threefold symmetry, but occasional extended modifications (larger than 4 nm) were observed as well.

  4. Microstructure characterization of SiC nanowires as reinforcements in composites

    SciTech Connect

    Dong, Ronghua; Yang, Wenshu; Wu, Ping; Hussain, Murid; Xiu, Ziyang; Wu, Gaohui; Wang, Pingping

    2015-05-15

    SiC nanowires have been rarely investigated or explored along their axial direction by transmission electron microscopy (TEM). Here we report the investigation of the cross-section microstructure of SiC nanowires by embedding them into Al matrix. Morphology of SiC nanowires was cylindrical with smooth surface or bamboo shape. Cubic (3C-SiC) and hexagonal structure (2H-SiC) phases were detected by X-ray diffraction (XRD) analysis. High density stacking faults were observed in both the cylindrical and bamboo shaped nanowires which were perpendicular to their axial direction. Selected area electron diffraction (SAED) patterns of the cylindrical and bamboo shaped SiC nanowires both in the perpendicular and parallel direction to the axial direction were equivalent in the structure. After calculation and remodeling, it has been found that the SAED patterns were composed of two sets of diffraction patterns, corresponding to 2H-SiC and 3C-SiC, respectively. Therefore, it could be concluded that the SiC nanowires are composed of a large number of small fragments that are formed by hybrid 3C-SiC and 2H-SiC structures. - Graphical abstract: Display Omitted - Highlights: • Cross-section microstructure of SiC nanowires was observed in Al composite. • Cylindrical with smooth surface or bamboo shape SiC nanowires were found. • The cylindrical and bamboo shaped SiC nanowires were equivalent in structure. • Structure of SiC nanowires was remodeled. • SiC nanowires are composed of hybrid 3C-SiC and 2H-SiC structures.

  5. The superacid HBr/AlBr(3) : protonation of benzene and ordered crystal structure of [C(6)H(7)](+)[Al(2)Br(7)](-).

    PubMed

    Scholz, Franziska; Himmel, Daniel; Eisele, Lea; Unkrig, Wiebke; Krossing, Ingo

    2014-02-03

    Crystalline and properly ordered protonated benzene as the [C6 H7 ](+) [Al2 Br7 ](-) ⋅(C6 H6 ) salt 1 are obtained by the combination of solid AlBr3 , benzene, and HBr gas. Compound 1 was characterized and verified by NMR, Raman and X-Ray spectroscopy. This unexpected simple and straight forward access shows that HBr/AlBr3 is an underestimated superacid that should be used more frequently.

  6. Density functional calculations for a high energy density compound of formula C6H 6-n (NO 2) n.

    PubMed

    Chi, Wei-Jie; Li, Lu-Lin; Li, Bu-Tong; Wu, Hai-Shun

    2012-08-01

    A series of polynitroprismanes, C(6)H(6-n )(NO(2))(n) (n = 1-6) intended for use as high energy density compounds (HEDCs) were designed computationally. Their electronic structures, heats of formation, interactions between nitro groups, specific enthalpies of combustion, bond dissociation energies, and explosive performances (detonation velocities and detonation pressures) were calculated using density functional theory (DFT) with the 6-311 G** basis set. The results showed that all of the polynitroprismanes had high positive heats of formation that increased with the number of substitutions for the prismane derivatives, while the specific enthalpy of combustion decreased as the number of nitro groups increased. In addition, the range of enthalpy of combustion reducing is getting smaller. Interactions between ortho (vicinal) groups deviate from the group additivity rule and decrease as the number of nitro groups increases. In terms of thermodynamic stability, all of the polynitroprismanes had higher bond dissociation energies (BDEs) than RDX and HMX. Detonation velocities and detonation pressures were estimated using modified Kamlet-Jacobs equations based on the heat of detonation (Q) and the theoretical density of the molecule (ρ). It was found that ρ, D, and P are strongly linearly related to the number of nitro groups. Taking both their energetic properties and thermal stabilities into account, pentanitroprismane and hexanitroprismane are potential candidate HEDCs.

  7. Coupled antiferromagnetic spin- 12 chains in green dioptase Cu6[Si6O18]·6H2O

    DOE PAGES

    Podlesnyak, Andrey A; Larry M. Anovitz; Kolesnikov, Alexander I; ...

    2016-02-01

    Inmore » this paper, we report inelastic neutron scattering measurements of the magnetic excitations of green dioptase Cu6[Si6O18]∙6H2O. The observed spectrum contains two magnetic modes and a prominent spin gap that is consistent with the ordered ground state of Cu moments coupled antiferromagnetically in spiral chains along the c axis and ferromagnetically in ab planes on the hexagonal cell. The data are in excellent agreement with a spin- 12Hamiltonian that includes antiferromagnetic nearest-neighbor intrachain coupling Jc=10.6(1) meV, ferromagnetic interchain coupling Jab=₋1.2 (1) meV, and exchange anisotropy ΔJc=0.14(1) meV. We calculated the sublattice magnetization to be strongly reduced, ~0.39μB. This appears compatible with a reduced Néel temperature, TN=14.5K

  8. Study on formation of step bunching on 6H-SiC (0001) surface by kinetic Monte Carlo method

    NASA Astrophysics Data System (ADS)

    Li, Yuan; Chen, Xuejiang; Su, Juan

    2016-05-01

    The formation and evolution of step bunching during step-flow growth of 6H-SiC (0001) surfaces were studied by three-dimensional kinetic Monte Carlo (KMC) method and compared with the analytic model based on the theory of Burton-Cabera-Frank (BCF). In the KMC model the crystal lattice was represented by a structured mesh which fixed the position of atoms and interatomic bonding. The events considered in the model were adatoms adsorption and diffusion on the terrace, and adatoms attachment, detachment and interlayer transport at the step edges. In addition, effects of Ehrlich-Schwoebel (ES) barriers at downward step edges and incorporation barriers at upwards step edges were also considered. In order to obtain more elaborate information for the behavior of atoms in the crystal surface, silicon and carbon atoms were treated as the minimal diffusing species. KMC simulation results showed that multiple-height steps were formed on the vicinal surface oriented toward [ 1 1 bar 00 ] or [ 11 2 bar 0 ] directions. And then the formation mechanism of the step bunching was analyzed. Finally, to further analyze the formation processes of step bunching, a one-dimensional BCF analytic model with ES and incorporation barriers was used, and then it was solved numerically. In the BCF model, the periodic boundary conditions (PBC) were applied, and the parameters were corresponded to those used in the KMC model. The evolution character of step bunching was consistent with the results obtained by KMC simulation.

  9. Pharmacologic Evaluation of Antidepressant Activity and Synthesis of 2-Morpholino-5-phenyl-6H-1,3,4-thiadiazine Hydrobromide

    PubMed Central

    Sarapultsev, Alexey P.; Chupakhin, Oleg N.; Sarapultsev, Petr A.; Sidorova, Larisa P.; Tseitler, Tatiana A.

    2016-01-01

    Substituted thiadiazines exert a reliable therapeutic effect in treating stress, and a schematic description of their ability to influence all aspects of a stress response has been depicted. This study was conducted to pharmacologically evaluate compound L-17, a substituted thiadiazine, (2-morpholino-5-phenyl-6H-1,3,4-thiadiazine, hydrobromide) for possible anti-psychotic/antidepressant activity. Compound L-17 was synthesized by cyclocondensation of α-bromoacetophenone with the original morpholine-4-carbothionic acid hydrazide. Pharmacologic evaluations were conducted using methods described by E.F. Lavretskaya (1985), and in accordance with published guidelines for studying drugs for neuroleptic activity. Compound L-17 was evaluated for various possible mechanisms of action, including its effects on cholinergic system agonists/antagonists, dopaminergic neurotransmission, the adrenergic system, and 5-HT3 serotonin receptors. One or more of these mechanisms may be responsible for the beneficial effects shown by thiadiazine compounds in experiments conducted to evaluate their activity in models of acute stress and acute myocardial infarction. PMID:27213404

  10. Carcass yields and meat quality characteristics of adult emus (Dromaius novaehollandiae) transported for 6h before slaughter.

    PubMed

    Menon, Deepa G; Bennett, Darin C; Uttaro, Bethany; Schaefer, Allan L; Cheng, Kimberly M

    2014-10-01

    The meat quality characteristics of adult emus transported for 6h before slaughter were determined. Forty-two emus were used in two trials, undertaken under warm and cool weather conditions, respectively. Male emus had significantly higher fat yields than females (12.43kg vs 9.5kg, P=0.002). About 38.1% of the emus had no wounds or bruises, 40.5% had bruises, while 21.4% had small wounds after transport. Meat from injured emus had significantly higher pH45. In warm weather, emus experienced significantly higher loss in body weight than that under cool weather. Drip loss in meat after 24h of storage was higher in emus which had greater live weight loss after transport (r=0.66, P<0.0001), confirming the adverse effects of transport stress on meat quality. Nutrient supplementation did not significantly affect processing yield or meat quality characteristics. This study points to the need for optimizing transport conditions of emus to maintain meat quality.

  11. The observation of scintillation in a hydrated inorganic compound: CeCl3 6H2O

    SciTech Connect

    Boatner, Lynn A; Neal, John S; Ramey, Joanne Oxendine; Chakoumakos, Bryan C; Custelcean, Radu

    2013-01-01

    We have recently reported the discovery of a new family of rare-earth metal-organic single-crystal scintillators based on Ce3+ as the activator ion. Starting with the CeCl3(CH3OH)4 prototype, this family of scintillators has recently been extended to include complex metal-organic adducts produced by reacting CeCl3 with heavier organics (e.g., isomers of propanol and butanol). Some of these new rare-earth metal-organic materials incorporated waters of hydration in their structures, and the observation of scintillation in these hydrated compounds was an original finding for any solid scintillator. In the present work, we now report what is apparently the initial observation of gamma-ray-excited scintillation in an inorganic hydrated material, namely single-crystal monoclinic CeCl3 6H2O. This observation shows that the mechanisms of the various scintillation energy-transfer processes are not blocked by the presence of waters of hydration in an inorganic material and that the observation of scintillation in other hydrated inorganic compounds is not precluded.

  12. History of the ISS/SIC: Antoine Depage, one of the founders of the ISS/SIC.

    PubMed

    Van Hee, R

    2002-10-01

    Antoine Depage, born near Brussels in 1862, was one of the founders and first Secretary General of the Société Internationale de Chirurgie (ISS-SIC). After an excellent medical education at the Free Brussels University, he became professor at the same university at the age of 27. Surgically trained by Prof. Thiriar, he became one of the leading Belgian surgeons at the end of the nineteenth century, and he published more than 100 articles in national and international journals. In 1907 he founded a school for nurses in Brussels, to be directed by Edith Cavell. He also vigorously transformed the organization of the public hospitals in the Belgian capital. During World War I Queen Elisabeth appointed him surgeon-in-chief of the Océan-hospital in De Panne, where more than 50,000 soldiers with wounds, fractures, cerebral trauma, nitrous gas intoxication, and infectious diseases, among other problems were treated. The results he and his team obtained were excellent, and mortality was low. Many surgeons, including Alexis Carrel, as well as distinguished political leaders came to visit him in the hospital barracks. After the war he was honored by many political and scientific organizations, including the Société Internationale de Chirurgie. He served our Society not only as Secretary General from 1902 to 1912 but became President of the 4th Congress of the ISS-SIC in New York. Antoine Depage died after a long illness in 1925.

  13. In situ toughened SiC ceramics with Al-B-C additions and oxide-coated SiC platelet/SiC composites

    SciTech Connect

    Cao, J. |

    1996-12-01

    This work aimed at fabrication and characterization of high toughness SiC ceramics through the applications of in situ toughening and SiC platelet reinforcement. The processing-microstructure-property relations of hot pressed SiC with Al, B, and C additions (designated as ABC-SiC) were investigated. Through a liquid phase sintering mechanism, dense SiC was obtained by hot pressing at a temperature as low as 1,700 C with 3 wt% Al, 0.6 wt% B, and 2 wt% C additions. These sintering aids also enhanced the {beta}-to-{alpha} (3C-to-4H) phase transformation, which promoted SiC grains to grow into plate-like shapes. Under optimal processing conditions, the microstructure exhibited high-aspect-ratio plate-shaped grains with a thin (< 1 nm) Al-containing amorphous grain boundary film. The mechanical properties of the toughened SiC and the composites were evaluated in comparison with a commercial Hexoloy SiC under identical test conditions. The C-curve behavior was examined using the strength-indentation load relationship and compared with that directly measured using precracked compact tension specimens. The in situ toughened ABC-SiC exhibited much improved flaw tolerance and a significantly rising R-curve behavior. A steady-state toughness in excess of 9 MPam{sup 1/2} was recorded for the ABC-SiC in comparison to a single valued toughness below 3 MPam{sup 1/2} for the Hexoloy. Toughening in the ABC-SiC was mainly attributed to grain bridging and subsequent pullout of the plate-shaped grains. The high toughness ABC-SiC exhibited a bend strength of 650 MPa with a Weibull modulus of 19; in comparison, the commercial SiC showed a bend strength of 400 MPa with a Weibull modulus of 6. Higher fracture toughness was also achieved by the reinforcement of SiC platelets, encapsulated with alumina, yttria, or silica, in a SiC matrix.

  14. Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

    DOE PAGES

    Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; ...

    2015-02-11

    Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity, according to microstructural investigations. But, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500more » C. Moreover, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.« less

  15. Synthesis of SiC nanowires with in-situ deposition of carbon coating.

    PubMed

    Yang, Wen; Araki, Hiroshi; Tang, Chengchun; Hu, Quanli; Suzuki, Hiroshi; Noda, Tetsuji

    2005-02-01

    SiC nanowires are effective reinforcement materials in ceramic matrix composites. A compliant coating such as carbon on nanowires is necessary in order to moderate the nanowire/matrix interfacial bounding for taking the most advantages of SiC nanowires. SiC nanowires with an in-situ deposition of carbon shell coating were fabricated by a novel chemical vapor growth process. Highresolution transmission electron microscopy examinations showed that the nanowires consisted of a single crystal beta-SiC core with an amorphous carbon shell 2-5 nm in thickness. The nanowires were straight with a length generally over 10 microm and a diameter 15-150 nm. The growth direction of the core SiC nanowires is (111). A simple three-step growth model for SiC nanowires was proposed based on a vapor-solid growth mechanism. Because the carbon-coated nanowires were grown directly on continuous Tyranno-SA SiC fibers, in-situ application of the present technique on the fabrication of SiC nanowire-reinforced SiC/SiC composites is expected.

  16. Comparing SiC switching power devices: MOSFET, NPN transistor and GTO thyristor

    NASA Astrophysics Data System (ADS)

    Huang, Alex Q.; Zhang, Bo

    2000-02-01

    This paper for the first time systematically analyzed the operation mechanism of SiC NPN transistors. Theoretical device figure-of-merits for switching power devices based on the conduction loss and switching loss were developed. The on-state loss and the switching loss of 4.5-kV SiC switching power devices (MOSFET, NPN transistor and GTO thyristor) were then compared by using theoretical and numerical calculations. Special emphasis is placed on comparing the total power loss of the devices at a given current density. Theoretical analyses and simulation results show that GTO thyristors have a large switching loss due to the long current tail at turn-off, hence restricting its maximum operation frequency. High voltage SiC MOSFETs have a large on-state power dissipation at high current levels due to the resistive nature of the drift region, restricting their applications at high current densities. SiC NPN transistors have a comparable switching loss as that of SiC MOSFETs, but at the same time, SiC NPN transistors have the lowest on-state loss. This study indicates that SiC NPN transistor is the most attractive switching power device at 4.5 kV.

  17. Additive Manufacturing of SiC Based Ceramics and Ceramic Matrix Composites

    NASA Technical Reports Server (NTRS)

    Halbig, Michael Charles; Singh, Mrityunjay

    2015-01-01

    Silicon carbide (SiC) ceramics and SiC fiber reinforcedSiC ceramic matrix composites (SiCSiC CMCs) offer high payoff as replacements for metals in turbine engine applications due to their lighter weight, higher temperature capability, and lower cooling requirements. Additive manufacturing approaches can offer game changing technologies for the quick and low cost fabrication of parts with much greater design freedom and geometric complexity. Four approaches for developing these materials are presented. The first two utilize low cost 3D printers. The first uses pre-ceramic pastes developed as feed materials which are converted to SiC after firing. The second uses wood containing filament to print a carbonaceous preform which is infiltrated with a pre-ceramic polymer and converted to SiC. The other two approaches pursue the AM of CMCs. The first is binder jet SiC powder processing in collaboration with rp+m (Rapid Prototyping+Manufacturing). Processing optimization was pursued through SiC powder blending, infiltration with and without SiC nano powder loading, and integration of nanofibers into the powder bed. The second approach was laminated object manufacturing (LOM) in which fiber prepregs and laminates are cut to shape by a laser and stacked to form the desired part. Scanning electron microscopy was conducted on materials from all approaches with select approaches also characterized with XRD, TGA, and bend testing.

  18. Near-surface and bulk behavior of Ag in SiC

    SciTech Connect

    Xiao, Haiyan; Zhang, Yanwen; Snead, Lance Lewis; Shutthanandan, Vaithiyalingam; Xue, Haizhou; Weber, William J

    2012-01-01

    The diffusive release of fission products, such as Ag, from TRISO particles at high temperatures has raised concerns regarding safe and economic operation of advanced nuclear reactors. Understanding the mechanisms of Ag diffusion is thus of crucial importance for effective retention of fission products. Two mechanisms, i.e., grain boundary diffusion and vapor or surface diffusion through macroscopic structures such as nano-pores or nano-cracks, remain in debate. In the present work, an integrated computational and experimental study of the near-surface and bulk behavior of Ag in silicon carbide (SiC) has been carried out. The ab initio calculations show that Ag prefers to adsorb on the SiC surface rather than in the bulk, and the mobility of Ag on the surface is high. The energy barrier for Ag desorption from the surface is calculated to be 0.85-1.68 eV, and Ag migration into bulk SiC through equilibrium diffusion process is not favorable. Experimentally, Ag ions are implanted into SiC to produce Ag profiles buried in the bulk and peaked at the surface. High-temperature annealing leads to Ag release from the surface region instead of diffusion into the interior of SiC. It is suggested that surface diffusion through mechanical structural imperfection, such as vapor transport through cracks in SiC coatings, may be a dominating mechanism accounting for Ag release from the SiC in the nuclear reactor.

  19. Near-surface and bulk behavior of Ag in SiC

    SciTech Connect

    Xiao, Haiyan Y.; Zhang, Yanwen; Snead, Lance L.; Shutthanandan, V.; Xue, Haizhou; Weber, William J.

    2012-01-01

    The diffusive release of fission products, such as Ag, from TRISO particles at high temperatures has raised concerns regarding safe and economic operation of advanced nuclear reactors. Understanding the mechanisms of Ag diffusion is thus of crucial importance for effective retention of fission products. Two mechanisms, i.e., grain boundary diffusion and vapor or surface diffusion through macroscopic structures such as nano-pores or nano-cracks, remain in debate. In the present work, an integrated computational and experimental study of the nearsurface and bulk behavior of Ag in silicon carbide (SiC) has been carried out. The ab initio calculations show that Ag prefers to adsorb on the SiC surface rather than in the bulk, and the mobility of Ag on the surface is high. The energy barrier for Ag desorption from the surface is calculated to be 0.85~1.68 eV, and Ag migration into bulk SiC through equilibrium diffusion process is not favorable. Experimentally, Ag ions are implanted into SiC to produce Ag profiles buried in the bulk and peaked at the surface. High-temperature annealing leads to Ag release from the surface region instead of diffusion into the interior of SiC. It is suggested that surface diffusion through mechanical structural imperfection, such as vapor transport through cracks in 2 SiC coatings, may be a dominating mechanism accounting for Ag release from the SiC in the nuclear reactor.

  20. SiC: Polar properties and their influence on technology and devices

    NASA Astrophysics Data System (ADS)

    Helbig, R.; Engelbrecht, F.

    Silicon Carbide (SiC) is one of the tetrahedrally coordinated semiconductor materials with a wide band gap E g. Due to the strong asymmetric valence charge density distribution along the `Si-C' bond, nearly the complete bond charge is closely located at the carbon atom. Therefore, SiC is piezoelectric and shows a strong `Reststrahl' absorption which allows the investigation of optical transitions due to impurities (vibrational and electronic transitions) only in a narrow band in the infrared spectral region. The polar character of the `Si-C' bond also strongly influences the physico-chemical properties of SiC which are of fundamental importance for the successful development of process technologies for to electronic devices. The state of the art and new developments in the fields crystal growth, oxidation and reactive ion etching of SiC are reported. In addition to the polar properties of the SiC, also the anisotropic properties have to be taken into account for the design and the processing of electronic devices.

  1. Microwave absorbability of unidirectional SiC fiber composites as a function of the constituents’ properties

    NASA Astrophysics Data System (ADS)

    Wan, Guangchao; Jiang, Jianjun; He, Yun; Bie, Shaowei

    2016-06-01

    The electromagnetic properties of unidirectional SiC fibre composites can be efficiently tailored by adjusting the properties of the composite’s constituents making these composites potential microwave absorbers. In this study, the microwave absorbing properties of unidirectional SiC fibre composites were investigated based on the electromagnetic properties of the constituents at frequencies ranging from 8 to 18 GHz. The composite was composed of two types of SiC fibres that individually exhibit relatively high and low electrical conductivity. The matrix together with the low-conductivity SiC fibres were characterized by effective permittivity and conductivity which provided a theoretical calculation of the microwave reflectivity. The theoretical calculation was based on formulas about anisotropic unidirectional composites and was compared to the results obtained from numerical simulations. There was good agreement in the results obtained from both methods. It was found that the intensity of microwave absorption of the composite was dependent primarily on the properties of the high-conductivity SiC fibres. The absorption band appeared to be dependent on the effective permittivity of the matrix and the low-conductivity SiC fibres and the conductivity of the high-conductivity SiC fibres.

  2. Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC

    NASA Astrophysics Data System (ADS)

    Chen, X. D.; Fung, S.; Ling, C. C.; Beling, C. D.; Gong, M.

    2003-09-01

    Deep level transient spectroscopy has been employed to study the deep level defects introduced in n-type 6H-SiC after neutron irradiation. Deep levels situated at EC-0.23, EC-0.36/0.44, EC-0.50, and EC-0.62/0.68 eV have been detected in the temperature range of 100-450 K, which have been identified with the previously reported deep levels ED1, E1/E2, Ei, and Z1/Z2, respectively. Thermal annealing studies of these deep levels reveal that ED1 and Ei anneal at a temperature below 350 °C, the Z1/Z2 levels anneal out at 900 °C, while the intensity of the E1/E2 peaks is increased with annealing temperature, reaching a maximum at about 500-750 °C, and finally annealing out at 1400 °C. The possible nature of the deep levels ED1, E1/E2, Ei, and Z1/Z2 are discussed in the context of their annealing behavior. Upon further annealing at 1600 °C, four deep levels labeled NE1 at EC-0.44 eV, NE2 EC-0.53 eV, NE3EC-0.64 eV, and NE4EC-0.68 eV are produced. Evidence is given that these levels are different in their origin to E1/E2 and Z1/Z2.

  3. Creep of chemically vapor deposited SiC fibers

    NASA Technical Reports Server (NTRS)

    Dicarlo, J. A.

    1984-01-01

    The creep, thermal expansion, and elastic modulus properties for chemically vapor deposited SiC fibers were measured between 1000 and 1500 C. Creep strain was observed to increase logarithmically with time, monotonically with temperature, and linearly with tensile stress up to 600 MPa. The controlling activation energy was 480 + or - 20 kJ/mole. Thermal pretreatments near 1200 and 1450 C were found to significantly reduce fiber creep. These results coupled with creep recovery observations indicate that below 1400 C fiber creep is anelastic with neglible plastic component. This allowed a simple predictive method to be developed for describing fiber total deformation as a function of time, temperature, and stress. Mechanistic analysis of the property data suggests that fiber creep is the result of beta-SiC grain boundary sliding controlled by a small percent of free silicon in the grain boundaries.

  4. Graphene nanoribbons anchored to SiC substrates

    NASA Astrophysics Data System (ADS)

    Le, Nam B.; Woods, Lilia M.

    2016-09-01

    Graphene nanoribbons are quasi-one-dimensional planar graphene allotropes with diverse properties dependent on their width and types of edges. Graphene nanoribbons anchored to substrates is a hybrid system, which offers novel opportunities for property modifications as well as experimental control. Here we present electronic structure calculations of zigzag graphene nanoribbons chemically attached via the edges to the Si or C terminated surfaces of a SiC substrate. The results show that the edge characteristics are rather robust and the properties are essentially determined by the individual nanoribbon. While the localized spin polarization of the graphene nanoribbon edge atoms is not significantly affected by the substrate, secondary energy gaps in the highest conduction and lowest valence region may emerge in the anchored structures. The van der Waals interaction together with the electrostatic interactions due to the polarity of the surface bonds are found to be important for the structure parameters and energy stability.

  5. Demonstration of SiC Pressure Sensors at 750 C

    NASA Technical Reports Server (NTRS)

    Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

    2014-01-01

    We report the first demonstration of MEMS-based 4H-SiC piezoresistive pressure sensors tested at 750 C and in the process confirmed the existence of strain sensitivity recovery with increasing temperature above 400 C, eventually achieving near or up to 100% of the room temperature values at 750 C. This strain sensitivity recovery phenomenon in 4H-SiC is uncharacteristic of the well-known monotonic decrease in strain sensitivity with increasing temperature in silicon piezoresistors. For the three sensors tested, the room temperature full-scale output (FSO) at 200 psig ranged between 29 and 36 mV. Although the FSO at 400 C dropped by about 60%, full recovery was achieved at 750 C. This result will allow the operation of SiC pressure sensors at higher temperatures, thereby permitting deeper insertion into the engine combustion chamber to improve the accurate quantification of combustor dynamics.

  6. Interaction Of Water Molecules With SiC(001) Surfaces

    SciTech Connect

    Cicero, G; Catellani, A; Galli, G

    2004-08-10

    We have investigated the interaction of water molecules with the polar Si- and C- terminated surfaces of cubic Silicon Carbide by means of ab initio molecular dynamics simulations at finite temperature. Different water coverages were considered, from {1/4} to a complete monolayer. Irrespective of coverage, we find that water dissociates on the silicon terminated surfaces, leading to important changes in both its structural and electronic properties. On the contrary, the carbon terminated surface remains inert when exposed to water. We propose experiments to reveal the ionic and electronic structure of wet Si-terminated surfaces predicted by our calculations, which at full coverage are notably different from those of hydrated Si(001) substrates. Finally, we discuss the implications of our results for SiC surface functionalization.

  7. Electronic structure of Si vacancy centers in SiC

    NASA Astrophysics Data System (ADS)

    Soykal, Oney; Dev, Pratibha; Economou, Sophia

    2015-03-01

    The spin state of silicon vacancies in SiC is a promising candidate for applications in solid state quantum information technologies due to its long coherence time at room temperature, its technological availability and wide range of polytypism. Until recently, the electronic structure of this vacancy was not well understood. We have developed a group theoretical model that correctly predicts the spin 3/2 structure seen in recent experiments for the 4H-SiC defect. We have included several different mechanisms involved in the mixing of its spin states, such as crystal field splitting, spin-orbit coupling, spin-spin coupling, strain and Jahn-Teller interactions. We have also carried out DFT calculations that support and complement our analytical results.

  8. Comparative study of SiC- and Si-based photovoltaic inverters

    NASA Astrophysics Data System (ADS)

    Ando, Yuji; Oku, Takeo; Yasuda, Masashi; Shirahata, Yasuhiro; Ushijima, Kazufumi; Murozono, Mikio

    2017-01-01

    This article reports comparative study of 150-300 W class photovoltaic inverters (Si inverter, SiC inverter 1, and SiC inverter 2). In these sub-kW class inverters, the ON-resistance was considered to have little influence on the efficiency. The developed SiC inverters, however, have exhibited an approximately 3% higher direct current (DC)-alternating current (AC) conversion efficiency as compared to the Si inverter. Power loss analysis indicated a reduction in the switching and reverse recovery losses of SiC metal-oxide-semiconductor field-effect transistors used for the DC-AC converter is responsible for this improvement. In the SiC inverter 2, an increase of the switching frequency up to 100 kHz achieved a state-of-the-art combination of the weight (1.25 kg) and the volume (1260 cm3) as a 150-250 W class inverter. Even though the increased switching frequency should cause the increase of the switching losses, the SiC inverter 2 exhibited an efficiency comparable to the SiC inverter 1 with a switching frequency of 20 kHz. The power loss analysis also indicated a decreased loss of the DC-DC converter built with SiC Schottky barrier diodes led to the high efficiency for its increased switching frequency. These results clearly indicated feasibility of SiC devices even for sub-kW photovoltaic inverters, which will be available for the applications where compactness and efficiency are of tremendous importance.

  9. Detection and analysis of particles with failed SiC in AGR-1 fuel compacts

    DOE PAGES

    Hunn, John D.; Baldwin, Charles A.; Gerczak, Tyler J.; ...

    2016-04-06

    As the primary barrier to release of radioactive isotopes emitted from the fuel kernel, retention performance of the SiC layer in tristructural isotropic (TRISO) coated particles is critical to the overall safety of reactors that utilize this fuel design. Most isotopes are well-retained by intact SiC coatings, so pathways through this layer due to cracking, structural defects, or chemical attack can significantly contribute to radioisotope release. In the US TRISO fuel development effort, release of 134Cs and 137Cs are used to detect SiC failure during fuel compact irradiation and safety testing because the amount of cesium released by a compactmore » containing one particle with failed SiC is typically ten or more times higher than that released by compacts without failed SiC. Compacts with particles that released cesium during irradiation testing or post-irradiation safety testing at 1600–1800 °C were identified, and individual particles with abnormally low cesium retention were sorted out with the Oak Ridge National Laboratory (ORNL) Irradiated Microsphere Gamma Analyzer (IMGA). X-ray tomography was used for three-dimensional imaging of the internal coating structure to locate low-density pathways through the SiC layer and guide subsequent materialography by optical and scanning electron microscopy. In addition, all three cesium-releasing particles recovered from as-irradiated compacts showed a region where the inner pyrocarbon (IPyC) had cracked due to radiation-induced dimensional changes in the shrinking buffer and the exposed SiC had experienced concentrated attack by palladium; SiC failures observed in particles subjected to safety testing were related to either fabrication defects or showed extensive Pd corrosion through the SiC where it had been exposed by similar IPyC cracking.« less

  10. Detection and analysis of particles with failed SiC in AGR-1 fuel compacts

    SciTech Connect

    Hunn, John D.; Baldwin, Charles A.; Gerczak, Tyler J.; Montgomery, Fred C.; Morris, Robert N.; Silva, Chinthaka M.; Demkowicz, Paul A.; Harp, Jason M.; Ploger, Scott A.

    2016-04-06

    As the primary barrier to release of radioactive isotopes emitted from the fuel kernel, retention performance of the SiC layer in tristructural isotropic (TRISO) coated particles is critical to the overall safety of reactors that utilize this fuel design. Most isotopes are well-retained by intact SiC coatings, so pathways through this layer due to cracking, structural defects, or chemical attack can significantly contribute to radioisotope release. In the US TRISO fuel development effort, release of 134Cs and 137Cs are used to detect SiC failure during fuel compact irradiation and safety testing because the amount of cesium released by a compact containing one particle with failed SiC is typically ten or more times higher than that released by compacts without failed SiC. Compacts with particles that released cesium during irradiation testing or post-irradiation safety testing at 1600–1800 °C were identified, and individual particles with abnormally low cesium retention were sorted out with the Oak Ridge National Laboratory (ORNL) Irradiated Microsphere Gamma Analyzer (IMGA). X-ray tomography was used for three-dimensional imaging of the internal coating structure to locate low-density pathways through the SiC layer and guide subsequent materialography by optical and scanning electron microscopy. In addition, all three cesium-releasing particles recovered from as-irradiated compacts showed a region where the inner pyrocarbon (IPyC) had cracked due to radiation-induced dimensional changes in the shrinking buffer and the exposed SiC had experienced concentrated attack by palladium; SiC failures observed in particles subjected to safety testing were related to either fabrication defects or showed extensive Pd corrosion through the SiC where it had been exposed by similar IPyC cracking.

  11. SiC multi-layer protective coating on carbon obtained by thermionic vacuum arc method

    NASA Astrophysics Data System (ADS)

    Ciupina, V.; Lungu, C. P.; Vladoiu, R.; Epure, T.-D.; Prodan, G.; Roşca, C.; Porosnicu, C.; Jepu, I.; Belc, M.; Prodan, M.; Stanescu, I. M.; Stefanov, C.; Contulov, M.; Mandes, A.; Dinca, V.; Vasile, E.; Zarovschi, V.; Nicolescu, V.

    2013-09-01

    SiC single-layer or multi-layer on C used to improve the oxidation resistance and tribological properties of C have been obtained by Thermionic Vacuum Arc (TVA) method. The 200nm thickness carbon thin films was deposed on glass or Si substrate and then 100÷500 nm thickness SiC successively layers on carbon thin film was deposed. The microstructure and mechanical characteristics of as-prepared SiC coating were investigated by Transmission Electron Microscopy (TEM, STEM), Energy Dispersive X-Ray Spectroscopy (EDS), Electron Scattering Chemical Analysis (ESCA) and tribological techniques. Samples containing SiC single-layer or multi-layer coating on carbon were investigated up to 1000°C. The results of thermal treatments reveals the increase of oxidation resistance with increase of the number of SiC layers. The mechanism of oxidation protection is based on the reaction between SiC and elemental oxygen resulting SiO2 and CO. The tribological behavior of SiC coatings was evaluated with a tribometer with ball-on-disk configuration from CSM device with 6mm diameter sapphire ball, sliding speed in dry conditions being 0.2m/s, with normal contact loads of 0.5N, 1N, 1.5N and 2N, under unlubricated conditions. The friction coefficient on SiC was compared with the friction coefficient on uncoated carbon layer. Electrical surface resistance of SiC coating on carbon at different temperatures was measured comparing the potential drop on the sample with the potential drop on a series standard resistance in constant mode.

  12. Thermostructural Properties Of Sic/Sic Panels With 2.5d And 3d Fiber Architectures

    NASA Technical Reports Server (NTRS)

    Yun, H. M.; DeCarlo, J. A.; Bhatt, R. H.; Jaskowiak, M. H.

    2005-01-01

    CMC hot-section components in advanced engines for power and propulsion will typically require high cracking strength, high ultimate strength and strain, high creep- rupture resistance, and high thermal conductivity in all directions. In the past, NASA has demonstrated fabrication of a variety of SiC/SiC flat panels and round tubes with various 2D fiber architectures using the high-modulus high-performance Sylramic-iBN Sic fiber and Sic-based matrices derived by CVI, MI, and/or PIP processes. The thermo- mechanical properties of these CMC have shown state-of-the-art performance, but primarily in the in-plane directions. Currently NASA is extending the thermostructural capability of these SiC/SiC systems in the thru-thickness direction by using various 2.5D and 3D fiber architectures. NASA is also using specially designed fabrication steps to optimize the properties of the BN-based interphase and Sic-based matrices. In this study, Sylramic-iBN/SiC panels with 2D plain weave, 2.5D satin weave, 2.5D ply-to-ply interlock weave, and 3D angle interlock fiber architectures, all woven at AITI, were fabricated using matrix densification routes previously established between NASA and GEPSC for CVI-MI processes and between NASA and Starfire-Systems for PIP processes. Introduction of the 2.5 D fiber architecture along with an improved matrix process was found to increase inter-laminar tensile strength from 1.5 -2 to 3 - 4 ksi and thru-thickness thermal conductivity from 15-20 to 30-35 BTU/ft.hr.F with minimal reduction in in-plane strength and creep-rupture properties. Such improvements should reduce thermal stresses and increase the thermostructural operating envelope for SiC/SiC engine components. These results are analyzed to offer general guidelines for selecting fiber architectures and constituent processes for high-performance SiC/SiC engine components.

  13. Similarities and differences in sublimation growth of SiC and AlN

    NASA Astrophysics Data System (ADS)

    Epelbaum, B. M.; Bickermann, M.; Nagata, S.; Heimann, P.; Filip, O.; Winnacker, A.

    2007-07-01

    The similarities and differences in development of crystal growth of bulk silicon carbide (SiC) and aluminum nitride (AlN) are discussed. It is concluded that AlN is going to become the second crystal grown in production scale using PVT technique. The growth technology of AlN may take advantage of learning from SiC technology as the latter is based on significant advances achieved in the course of last 20 years. The main differences between two materials are in incongruent evaporation of SiC and in poor compatibility of AlN with regular high-temperature crucible materials.

  14. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices (Invited)

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    1999-01-01

    As illustrated by the invited paper at this conference and other works, SiC wafers and epilayers contain a variety of crystallographic imperfections, including micropipes, closed-core screw dislocations, grain boundaries, basal plane dislocations, heteropolytypic inclusions, and surfaces that are often damaged and contain atomically rough features like step bunching and growth pits or hillocks. Present understanding of the operational impact of various crystal imperfections on SiC electrical devices is reviewed, with an emphasis placed on high-field SiC power devices and circuits.

  15. Preparation and characterization of pulsed laser deposition (PLD) SiC films

    NASA Astrophysics Data System (ADS)

    Tang, Y. H.; Sham, T.-K.; Yang, D.; Xue, L.

    2006-03-01

    Si K-edge XAFS was used to characterize a stoichiometric SiC film prepared by pulsed KrF laser deposition. The film was deposited on a p-type Si(1 0 0) wafer at a substrate temperature of 250 °C in high vacuum with a laser fluence of ˜5 J/cm 2. The results reveal that the film contains mainly a SiC phase with an amorphous structure in which the Si atoms are bonded to C atoms in its first shell similar to that of crystalline SiC powder but with significant disorder.

  16. Atomistic simulation of free transverse vibration of graphene, hexagonal SiC, and BN nanosheets

    NASA Astrophysics Data System (ADS)

    Nguyen, Danh-Truong; Le, Minh-Quy; Bui, Thanh-Lam; Bui, Hai-Le

    2017-02-01

    Free transverse vibration of monolayer graphene, boron nitride (BN), and silicon carbide (SiC) sheets is investigated by using molecular dynamics finite element method. Eigenfrequencies and eigenmodes of these three sheets in rectangular shape are studied with different aspect ratios with respect to various boundary conditions. It is found that aspect ratios and boundary conditions affect in a similar way on natural frequencies of graphene, BN, and SiC sheets. Natural frequencies in all modes decrease with an increase of the sheet's size. Graphene exhibits the highest natural frequencies, and SiC sheet possesses the lowest ones. Missing atoms have minor effects on natural frequencies in this study.

  17. Ab initio prediction of SiC nanotubes with negative strain energy

    SciTech Connect

    Alfieri, G.; Kimoto, T.

    2014-01-20

    Single-layer SiC nanotubes (SiCNTs) are known to be metastable structures that is why only nanotubular fibers or polygrained nanotubes have been obtained experimentally. In this study, we report on how hydrogen helps to overcome the metastability of SiCNTs. Starting from SiC graphitic sheets, we analyzed the impact of either partial or full hydrogenation on the electronic properties and structural stability of SiCNTs. It is shown that, in general, hydrogenation widens the band gap of both SiC graphitic sheets and nanotubes and, irrespective of the difference in chirality and diameter, leads to the formation of energetically stable SiCNTs.

  18. A New Method to Grow SiC: Solvent-Laser Heated Floating Zone

    NASA Technical Reports Server (NTRS)

    Woodworth, A. A.; Neudeck, Philip G.; Sayir, Ali

    2012-01-01

    The solvent-laser heated floating zone (solvent-LHFZ) growth method is being developed to grow long single crystal SiC fibers. The technique combines the single crystal fiber growth ability of laser heated floating zone with solvent based growth techniques (e.g. traveling solvent method) ability to grow SiC from the liquid phase. Initial investigations reported in this paper show that the solvent-LHFZ method readily grows single crystal SiC (retains polytype and orientation), but has a significant amount of inhomogeneous strain and solvent rich inclusions.

  19. SiC nanofibers grown by high power microwave plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Honda, Shin-ichi; Baek, Yang-Gyu; Ikuno, Takashi; Kohara, Hidekazu; Katayama, Mitsuhiro; Oura, Kenjiro; Hirao, Takashi

    2003-05-01

    Silicon carbide (SiC) nanofibers have been synthesized on Si substrates covered by Ni thin films using high power microwave chemical vapor deposition (CVD). Characterization using transmission electron microscopy (TEM) combined with electron energy-dispersive X-ray spectroscopy (EDX) revealed that the resultant fibrous nanostructures were assigned to β-SiC with high crystallinity. The formation of SiC nanofibers can be explained by the vapor liquid solid (VLS) mechanism in which precipitation of SiC occurs from the supersaturated Ni nanoparticle containing Si and C.

  20. Design and fabrication of large-scale lightweight SiC space mirror

    NASA Astrophysics Data System (ADS)

    Zhang, Jianhan; Zhang, Yumin; Han, Jiecai; He, Xiaodong; Yao, Wang

    2006-02-01

    Silicon carbide is a new type of optics material developed in recent years because it offered some advantages over other traditional optical substrate materials such as low density, low thermal expansion coefficient, high thermal conductivity, big special heat, big modulus of elasticity and potential cost and schedule. So in this paper, the silicon carbide space mirror was fabricated by both reaction bonded (RB) and chemical vapor deposition (CVD) process. The green body of the space mirror was prepared by silicon carbide powder, carbon powder, dilution and solidified agent using slip casting method. The space mirror blank was prepared by green body and pure silicon powder. They were laid in vacuum sintering furnace and sintered at 1500°C. In this temperature, silicon was melting then infiltrated in SiC green body and reacted with carbon to generate the new SiC, at the same time, bonded original SiC powder, in the end, the nonporous SiC/Si space mirror blank was fabricated. The reaction bonded silicon carbide (RBSiC) was consistent with original SiC powder, new generated SiC and unreacted Si. Because RBSiC was SiC/Si two-phase structure, the hardness difference between SiC and Si made the space mirror difficult to achieve precision optical surface by grinding. So a full density SiC thin film was coated on the surface of space mirror blank with RBSiC by chemical vapor deposition (CVD) process. The raw material was CH3SiCl3. The hydrogen (H2) was catalyst. The deposition temperature was 1300°C. The cooling rate could be controlled. The SiC space mirror was honeycomb open back lightweight structure. The honeycomb cellar could be triangle, rectangle, hexogen and sector. The biggest diameter of SiC space mirror blank which has been fabricated is approach one meter by forgoing process. In order to the forgoing process was feasible, a flat round SiC space mirror with 250mm diameter. The space mirror was composed of a 4mm thick round plane faceplate and hexagonal cellar

  1. Graphene growth by molecular beam epitaxy on the carbon-face of SiC

    SciTech Connect

    Moreau, E.; Godey, S.; Ferrer, F. J.; Vignaud, D.; Wallart, X.; Avila, J.; Asensio, M. C.; Bournel, F.; Gallet, J.-J.

    2010-12-13

    Graphene layers have been grown by molecular beam epitaxy (MBE) on the (0001) C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC is fully preserved during the MBE growth. LEED patterns show multiple orientation domains which are characteristic of graphene on SiC (0001), indicating non-Bernal rotated graphene planes. Well-defined Dirac cones, typical of single-layer graphene, have been observed in the valence band for few graphene layers by synchrotron spectroscopy, confirming the electronic decoupling of graphene layers.

  2. The metastable HCl · 6H2O phase - IR spectroscopy, phase transitions and kinetic/thermodynamic properties in the range 170-205 K

    NASA Astrophysics Data System (ADS)

    Chiesa, S.; Rossi, M. J.

    2013-07-01

    In this laboratory study, 1 to 2 μm thick polycrystalline ice films have been grown under stirred flow reactor (SFR) conditions and subsequently doped with metered amounts of HCl under static conditions. A multidiagnostic approach including FTIR absorption spectroscopy in transmission, residual gas mass spectrometry (MS) and total pressure measurement was employed. Depending on the growth protocol controlling both temperature and partial pressure of HCl (PHCl), either amorphous HCl/H2O or crystalline HCl hexahydrate (HCl · 6H2O) have been obtained. After controlled doping with HCl and evaporation of excess H2O from the ice film, transmission FTIR of pure HCl · 6H2O films and use of calibrated residual gas MS enabled the measurement of differential (peak) IR cross sections at several mid-IR frequencies (σ = (6.5 ± 1.9) × 10-19 cm2 molec-1 at 1635 cm-1 as an example). Two types of kinetic experiments on pure HCl · 6H2O have been performed under SFR conditions: (a) evaporation of HCl · 6H2O under H2O-poor conditions over a narrow T range, and (b) observation of the phase transition from crystalline HCl · 6H2O to amorphous HCl/H2O under H2O-rich conditions at increasing T. The temperature dependence of the zero-order evaporation flux of HCl in pure HCl · 6H2O monitored at 3426 cm-1 led to log(Jev) molec cm-2s-1= (36.34 ± 3.20) - (80 810 ± 5800)/2.303RT with R=8.312 JK-1 mol-1. HCl · 6H2O has a significant intrinsic kinetic barrier to HCl evaporation of 15.1 kJ mol-1 in excess of the HCl sublimation enthalpy of 65.8 kJ mol-1 at 200 K but is kinetically unstable (metastable) at typical UT/LS conditions of HCl partial pressure (P(HCl)) and temperature. Water-rich HCl · 6H2O undergoes a facile phase transition from crystalline to the amorphous/ supercooled/disordered state easily observable at T≥ 195 K under both static and SFR conditions. This corresponds to low P(HCl) in the neighborhood of 10-7 Torr that also prevails at the Upper Troposphere

  3. Effects of SiC Particle Size and Process Parameters on the Microstructure and Hardness of AZ91/SiC Composite Layer Fabricated by FSP

    NASA Astrophysics Data System (ADS)

    Asadi, P.; Givi, M. K. Besharati; Abrinia, K.; Taherishargh, M.; Salekrostam, R.

    2011-12-01

    In this study, friction stir processing (FSP) was employed to develop a composite layer on the surface of as-cast AZ91 magnesium alloy using SiC particles (5 μm and 30 nm). The effects of the rotational and traverse speeds and the FSP pass number on the microstructure and microhardness of the friction stir processed (FSPed) layer with and without SiC particles were investigated. Optical microscopy and scanning electron microscopy (SEM) were employed for microstructural analysis. FSP produces a homogeneous microstructure by eliminating the precipitates near the grain boundaries. The analyses showed that the effects of the rotational and traverse speeds on the microstructure of specimens produced without nano-sized SiC particles are considerable; however, they are negligible in the specimens with particles. While the second FSP pass enhances the microstructure and microhardness of the samples with SiC particles, it has no significant effect on such properties in the samples without SiC particles.

  4. Transition metal complexes of the pyridylphosphine ligand o-C6H4(CH2PPy2)2.

    PubMed

    Vaughan, Teresa F; Spencer, John L

    2016-11-14

    The synthesis and coordination behaviour of the pyridylphosphine ligand o-C6H4(CH2PPy2)2 (Py = 2-pyridyl) are reported. The phosphine selenide was synthesised and the (1)JPSe value of 738 Hz indicates the phosphorus atoms have a similar basicity to PPh3. The ligand reacts with platinum(ii) and palladium(ii) complexes to give simple diphosphine complexes of the type [MX2(PP)] (M = Pt, X = Cl, I, Me, Et; M = Pd, X = Cl, Me). When the ligand is reacted with chloromethyl(hexa-1,5-diene)platinum the [PtClMe(PP)] complex results, from which a series of unsymmetrical platinum complexes of the type [PtMeL(PP)](+) (L = PPh3, PTA, SEt2 and pyridine) can be made. This enabled the comparison of the cis and trans influences of a range of ligands. The following cis influence series was compiled based on (31)P NMR data of these complexes: Py ≈ Cl > SEt2 > PTA > PPh3. Reaction of [PtClMe(PP)] with NaCH(SO2CF3)2 and carbon monoxide slowly formed an acyl complex, where the CO had inserted in the Pt-Me bond. Attempts to achieve P,P,N chelation, through abstracting the chloride ligand in [PtClMe(PP)], were unsuccessful. When the ligand reacted with platinum(0), palladium(0) and silver(i) complexes the bis-chelated complexes [M(PP)2] (M = Pt, Pd) and [Ag(PP)2](+) were formed respectively. Reaction of the ligand with [Ir(COD)(μ-Cl)]2 formed [IrCl(PP)(COD)]. When the chloride ligand was abstracted, the pyridyl nitrogens were able to interact with the iridium centre facilitating the isomerisation of the 1,2,5,6-η(4)-COD ligand to a 1-κ-4,5,6-η(3)-C8H12 ligand. The X-ray crystal structure of [Ir(1-κ-4,5,6-η(3)-C8H12)(PPN)]BPh4 confirmed the P,P,N chelation mode of the ligand. In solution, this complex displayed hemilabile behaviour, with the pyridyl nitrogens exchanging at a rate faster than the NMR time scale at room temperature.

  5. Abnormal difference between the mobilities of left- and right-twisted conformations of C6H12N2 roto-symmetrical molecules at very low temperatures.

    PubMed

    Gabuda, S P; Kozlova, S G

    2015-06-21

    We report an abnormal difference of low-temperature mobility of left-twisted and right-twisted conformations of roto symmetric molecules C6H12N2 (dabco) located in the same positions in crystal Zn2(C8H4O4)2⋅C6H12N2. The difference between (1)H NMR (Nuclear Magnetic Resonance) spin-relaxation data for left-twisted and right-twisted molecules reaches ∼3 × 10(3) times at 8 K and tends to grow at lower temperatures. We argue that taking into account four-component relativistic Dirac wave functions in the vicinity of the nodal plane of dabco molecules and vacuum fluctuations due to virtual particle-antiparticle pairs can explain the changes which C6H12N2 conformations undergo at low temperatures.

  6. Design of laser pulses for selective vibrational excitation of the N6-H bond of adenine and adenine-thymine base pair using optimal control theory.

    PubMed

    Sharma, Sitansh; Sharma, Purshotam; Singh, Harjinder; Balint-Kurti, Gabriel G

    2009-06-01

    Time dependent quantum dynamics and optimal control theory are used for selective vibrational excitation of the N6-H (amino N-H) bond in free adenine and in the adenine-thymine (A-T) base pair. For the N6-H bond in free adenine we have used a one dimensional model while for the hydrogen bond, N6-H(A)...O4(T), present in the A-T base pair, a two mathematical dimensional model is employed. The conjugate gradient method is used for the optimization of the field dependent cost functional. Optimal laser fields are obtained for selective population transfer in both the model systems, which give virtually 100% excitation probability to preselected vibrational levels. The effect of the optimized laser field on the other hydrogen bond, N1(A)...H-N3(T), present in A-T base pair is also investigated.

  7. Fabrication of mullite-bonded porous SiC ceramics from multilayer-coated SiC particles through sol-gel and in-situ polymerization techniques

    NASA Astrophysics Data System (ADS)

    Ebrahimpour, Omid

    In this work, mullite-bonded porous silicon carbide (SiC) ceramics were prepared via a reaction bonding technique with the assistance of a sol-gel technique or in-situ polymerization as well as a combination of these techniques. In a typical procedure, SiC particles were first coated by alumina using calcined powder and alumina sol via a sol-gel technique followed by drying and passing through a screen. Subsequently, they were coated with the desired amount of polyethylene via an in-situ polymerization technique in a slurry phase reactor using a Ziegler-Natta catalyst. Afterward, the coated powders were dried again and passed through a screen before being pressed into a rectangular mold to make a green body. During the heating process, the polyethylene was burnt out to form pores at a temperature of about 500°C. Increasing the temperature above 800°C led to the partial oxidation of SiC particles to silica. At higher temperatures (above 1400°C) derived silica reacted with alumina to form mullite, which bonds SiC particles together. The porous SiC specimens were characterized with various techniques. The first part of the project was devoted to investigating the oxidation of SiC particles using a Thermogravimetric analysis (TGA) apparatus. The effects of particle size (micro and nano) and oxidation temperature (910°C--1010°C) as well as the initial mass of SiC particles in TGA on the oxidation behaviour of SiC powders were evaluated. To illustrate the oxidation rate of SiC in the packed bed state, a new kinetic model, which takes into account all of the diffusion steps (bulk, inter and intra particle diffusion) and surface oxidation rate, was proposed. Furthermore, the oxidation of SiC particles was analyzed by the X-ray Diffraction (XRD) technique. The effect of different alumina sources (calcined Al2O 3, alumina sol or a combination of the two) on the mechanical, physical, and crystalline structure of mullite-bonded porous SiC ceramics was studied in the

  8. Tungsten phosphanylarylthiolato complexes [W{PhP(2-SC6H4)2-kappa3S,S',P} 2] and [W{P(2-SC6H4)3-kappa4S,S',S",P}2]: synthesis, structures and redox chemistry.

    PubMed

    Hildebrand, Alexandra; Lönnecke, Peter; Silaghi-Dumitrescu, Luminita; Hey-Hawkins, Evamarie

    2008-09-14

    PhP(2-SHC6H4)2 (PS2H2) reacts with WCl6 with reduction of tungsten to give the air-sensitive tungsten(IV) complex [W{PhP(2-SC6H4)2-kappa(3)S,S',P}2] (1). 1 is oxidised in air to [WO{PhPO(2-SC6H4)2-kappa(3)S,S',O}{PhP(2-SC6H4)2-kappa(3)S,S',P}] (2). The attempted synthesis of 2 by reaction of 1 with iodosobenzene as oxidising agent was unsuccessful. [W{P(2-SC6H4)3-kappa(4)S,S',S",P}2] (3) was formed in the reaction of P(2-SHC6H4)3 (PS3H3) with WCl6. The W(VI) complex 3 contains two PS3(3-) ligands, each coordinated in a tetradentate fashion resulting in a tungsten coordination number of eight. The reaction of 3 with AgBF4 yields the dinuclear tungsten complex [W2{P(2-SC6H4)3-kappa(4)S,S',S",P}3]BF4 (4). Complexes 1-4 were characterised by spectral methods and X-ray structure determination.

  9. Synthesis of One-Dimensional SiC Nanostructures from a Glassy Buckypaper

    SciTech Connect

    Ding, Mengning; Star, Alexander

    2013-02-21

    A simple and scalable synthetic strategy was developed for the fabrication of one-dimensional SiC nanostructures - nanorods and nanowires. Thin sheets of single-walled carbon nanotubes (SWNTs) were prepared by vacuum filtration and were washed repeatedly with sodium silicate (Na₂SiO₃) solution. The resulting “glassy buckypaper” was heated at 1300 - 1500 °C under Ar/H₂ to allow a solid state reaction between C and Si precursors to form a variety of SiC nanostructures. The morphology and crystal structures of SiC nanorods and nanowires were characterized using scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), energy dispersive xray spectroscopy (EDX), electron diffraction (ED) and x-ray diffraction (XRD) techniques. Furthermore, electrical conductance measurements were performed on SiC nanorods, demonstrating their potential applications in high-temperature sensors and control systems.

  10. Grain boundary effects on defect production and mechanical properties of irradiated nanocrystalline SiC

    SciTech Connect

    Jin Enze; Niu Lisha; Lin Enqiang; Song Xiaoxiong

    2012-05-15

    Grain boundaries (GBs) are known to play an important role in determining the mechanical and functional properties of nanocrystalline materials. In this study, we used molecular dynamics simulations to investigate the effects of damaged GBs on the mechanical properties of SiC that is irradiated by 10 keV Si atoms. The results reveal that irradiation promotes GB sliding and reduces the ability of GBs to block dislocations, which improves the deformation ability of nanocrystalline SiC. However, irradiation causes local rearrangements in disordered clusters and pinning of dislocations in the grain region, which restrains its deformation. These two mechanisms arise from the irradiation effects on GBs and grains, and these mechanisms compete in nanocrystalline SiC during irradiation. The irradiation effects on GBs dominate at low irradiation doses, and the effects on grains dominate at high doses; the result of these combined effects is a peak ductility of 0.09 dpa in nanocrystalline SiC.

  11. Dr. Wernher Von Braun leads a tour of the S-IC checkout area.

    NASA Technical Reports Server (NTRS)

    1999-01-01

    Dr. Eberhard Rees, Charles Schultze, James Webb, Elmer Staats, Comptroller General of the United States, and Dr. Wernher Von Braun tour the S-IC checkout area in the Marshall Space Flight Center quality lab.

  12. Light and heavy element isotopic compositions of mainstream SiC grains.

    SciTech Connect

    Amari, S.; Clayton, R. N.; Davis, A. M.; Lewis, R. S.; Pellin, M. J.

    1999-02-03

    Although a variety of types of pre-solar SiC grains have been classified by their C, N, and Si isotopic composition, the majority of such grains are so-called mainstream grains and are believed to have come from asymptotic giant branch stars [1]. We have previously reported the Mo isotopic compositions of presolar SiC grains whose C, N, and Si isotopic compositions were not known [2]. Since most presolar SiC grains fall in the mainstream group, we assumed that these grains were mainstream. The excellent match of the Mo isotopic data with expectations for nucleosynthesis in AGB stars was consistent with this identification. In order to better understand the distribution of isotopic compositions in presolar grains, we have begun to measure heavy element isotopic compositions of presolar SiC grains of known C, N and Si isotopic composition.

  13. Precursor Selection for Property Optimization in Biomorphic SiC Ceramics

    NASA Technical Reports Server (NTRS)

    Varela-Feria, F. M.; Lopez-Robledo, M. J.; Martinez-Fernandez, J.; deArellano-Lopez, A. R.; Singh, M.; Gray, Hugh R. (Technical Monitor)

    2002-01-01

    Biomorphic SiC ceramics have been fabricated using different wood precursors. The evolution of volume, density and microstructure of the woods, carbon performs, and final SiC products are systematically studied in order to establish experimental guidelines that allow materials selection. The wood density is a critical characteristic, which results in a particular final SiC density, and the level of anisotropy in mechanical properties in directions parallel (axial) and perpendicular (radial) to the growth of the wood. The purpose of this work is to explore experimental laws that can help choose a type of wood as precursor for a final SiC product, with a given microstructure, density and level of anisotropy. Preliminary studies of physical properties suggest that not only mechanical properties are strongly anisotropic, but also electrical conductivity and gas permeability, which have great technological importance.

  14. Amorphization resistance of nano-engineered SiC under heavy ion irradiation

    DOE PAGES

    Imada, Kenta; Ishimaru, Manabu; Xue, Haizhou; ...

    2016-06-19

    Silicon carbide (SiC) with a high-density of planar defects (hereafter, ‘nano-engineered SiC’) and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. Furthermore, it was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due tomore » the local increase in electronic energy loss that enhanced dynamic recovery.« less

  15. Study of Compressive Strength of sic in Impact Experiments with Divergent Flow

    NASA Astrophysics Data System (ADS)

    Paris, V.; Frage, N.; Zaretsky, E.

    2009-12-01

    The axisymmetric divergent flow was generated in SiC samples by impact of convex copper flyer plates (radius of curvature ranging from 88 to 550 mm) having velocities from 550 to 700 m/s. The sample-window (sapphire) interface velocities or the velocities of the free surface of the nickel witness plate were continuously monitored by VISAR. The maximum shear stress achieved under different confining stress just prior to the sample failure is associated with the compressive failure threshold of the SiC. Both the compressive failure threshold of SiC and the parameters of its inelastic deformation were found by matching the results of the AUTODYN-2D numerical simulation with the experimentally obtained waveforms. The compressive failure threshold of SiC is characterized by a transition from brittle-like behavior below the confining stress of 1.4-1.5 GPa to the ductile-like one at higher confining stress.

  16. Study of Compressive Strength of SiC In Impact Experiments with Divergent Flow

    NASA Astrophysics Data System (ADS)

    Paris, Vitaly; Frage, Naum; Zaretsky, Eugene

    2009-06-01

    The axisymmetric divergent flow was generated in SiC specimens by impact of spherical (radius of curvature ranging from 170 to 550 mm) copper impactors having velocities 550 to 700 m/s. The specimen-window (sapphire) interface velocities or the velocities of the free surface of the nickel witness plate were continuously monitored by VISAR. The maximum, just prior to the failure, shear stress values achieved in the SiC under different confining stresses are associated with the failure threshold of the material. Both the compressive failure threshold of SiC and the parameters of its inelastic deformation were found by matching the results of the AUTODYN numerical simulation to the experimentally obtained waveforms. The compressive failure threshold of SiC is characterized by a transition from apparently pressure-dependent behavior below the confining stress equal to 1.5 GPa to a pressure-independent behavior at higher confining stresses.

  17. Toxicity assessment of SiC nanofibers and nanorods against bacteria.

    PubMed

    Szala, Mateusz; Borkowski, Andrzej

    2014-02-01

    In the present study, evidence of the antibacterial effects of silicon carbide (SiC) nanofibers (NFSiC) and nanorods (NRSiC) obtained by combustion synthesis has been presented. It has been shown that the examined bacteria, Pseudomonas putida, could bind to the surface of the investigated SiC nanostructures. The results of respiration measurements, dehydrogenase activity measurements, and evaluation of viable bacteria after incubation with NFSiC and NRSiC demonstrated that the nanostructures of SiC affect the growth and activity of the bacteria examined. The direct count of bacteria stained with propidium iodide after incubation with SiC nanostructures revealed that the loss of cell membrane integrity could be one of the main effects leading to the death of the bacteria.

  18. Synthesis of one-dimensional SiC nanostructures from a glassy buckypaper.

    PubMed

    Ding, Mengning; Star, Alexander

    2013-03-01

    A simple and scalable synthetic strategy was developed for the fabrication of one-dimensional SiC nanostructures-nanorods and nanowires. Thin sheets of single-walled carbon nanotubes (SWNTs) were prepared by vacuum filtration and were washed repeatedly with sodium silicate (Na2SiO3) solution. The resulting "glassy buckypaper" was heated at 1300-1500 °C under Ar/H2 to allow a solid state reaction between C and Si precursors to form a variety of SiC nanostructures. The morphology and crystal structures of SiC nanorods and nanowires were characterized using scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), energy-dispersive X-ray spectroscopy (EDX), electron diffraction (ED), and X-ray diffraction (XRD) techniques. Furthermore, electrical conductance measurements were performed on SiC nanorods, demonstrating their potential applications in high-temperature sensors and control systems.

  19. Highly flexible, nonflammable and free-standing SiC nanowire paper

    NASA Astrophysics Data System (ADS)

    Chen, Jianjun; Liao, Xin; Wang, Mingming; Liu, Zhaoxiang; Zhang, Judong; Ding, Lijuan; Gao, Li; Li, Ye

    2015-03-01

    Flexible paper-like semiconductor nanowire materials are expected to meet the criteria for some emerging applications, such as components of flexible solar cells, electrical batteries, supercapacitors, nanocomposites, bendable or wearable electronic or optoelectronic components, and so on. As a new generation of wide-bandgap semiconductors and reinforcements in composites, SiC nanowires have advantages in power electronic applications and nanofiber reinforced ceramic composites. Herein, free-standing SiC nanowire paper consisting of ultralong single-crystalline SiC nanowires was prepared through a facile vacuum filtration approach. The ultralong SiC nanowires were synthesized by a sol-gel and carbothermal reduction method. The flexible paper composed of SiC nanowires is ~100 nm in width and up to several hundreds of micrometers in length. The nanowires are intertwisted with each other to form a three-dimensional network-like structure. SiC nanowire paper exhibits high flexibility and strong mechanical stability. The refractory performance and thermal stability of SiC nanowire paper were also investigated. The paper not only exhibits excellent nonflammability in fire, but also remains well preserved without visible damage when it is heated in an electric oven at a high temperature (1000 °C) for 3 h. With its high flexibility, excellent nonflammability, and high thermal stability, the free-standing SiC nanowire paper may have the potential to improve the ablation resistance of high temperature ceramic composites.Flexible paper-like semiconductor nanowire materials are expected to meet the criteria for some emerging applications, such as components of flexible solar cells, electrical batteries, supercapacitors, nanocomposites, bendable or wearable electronic or optoelectronic components, and so on. As a new generation of wide-bandgap semiconductors and reinforcements in composites, SiC nanowires have advantages in power electronic applications and nanofiber

  20. Amorphization resistance of nano-engineered SiC under heavy ion irradiation

    SciTech Connect

    Imada, Kenta; Ishimaru, Manabu; Xue, Haizhou; Zhang, Yanwen; Shannon, Steven C.; Weber, William J.

    2016-06-19

    Silicon carbide (SiC) with a high-density of planar defects (hereafter, ‘nano-engineered SiC’) and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. Furthermore, it was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due to the local increase in electronic energy loss that enhanced dynamic recovery.

  1. Formation of a Buffer Layer for Graphene on C-Face SiC{0001}

    NASA Astrophysics Data System (ADS)

    He, Guowei; Srivastava, N.; Feenstra, R. M.

    2014-04-01

    Graphene films prepared by heating the SiC surface (the C-face of the {0001} surface) in a Si-rich environment have been studied using low-energy electron diffraction (LEED) and low-energy electron microscopy. Upon graphitization, an interface with symmetry is observed by in situ LEED. After oxidation, the interface displays symmetry. Electron reflectivity measurements indicate that these interface structures arise from a graphene-like "buffer layer" that forms between the graphene and the SiC, similar to that observed on Si-face SiC. From a dynamical LEED structure calculation for the oxidized C-face surface, it is found to consist of a graphene layer sitting on top of a silicate (Si2O3) layer, with the silicate layer having the well-known structure as previously studied on bare SiC surfaces. Based on this result, the structure of the interface prior to oxidation is discussed.

  2. Selective Growth of Graphene by Pulsed Laser Annealing Ion Implanted SiC

    NASA Astrophysics Data System (ADS)

    Berke, Kara; Wang, Xiaotie; Rudawski, Nick; Venkatachalam, Dinesh; Fridmann, Joel; Gila, Brent; Ren, Fan; Elliman, Rob; Hebard, Arthur; Appleton, Bill

    2014-03-01

    We report a method for site-selective graphene growth on SiC for direct nano-scale patterning of graphene. Crystalline SiC was implanted with Si and C ions to amorphize the sample surface, then subjected to pulsed laser annealing (PLA); graphene growth occurred only where ions were implanted. PLA parameters including the fluence, number of pulses, and annealing environment were investigated to optimize the growth process. Our previous work involving Au, Cu, and Ge implants in SiC suggested that both the implanted species and surface amorphization affect graphene growth. In this work, we show that surface amorphization alone, without the presence of foreign ionic species, can be used with PLA to create site-selective graphene growth on SiC. Samples were characterized using Raman spectroscopy and cross-sectional transmission electron microscopy. also affiliated with Raith USA, Incorporated.

  3. Breakthrough in Power Electronics from SiC: May 25, 2004 - May 31, 2005

    SciTech Connect

    Marckx, D. A.

    2006-03-01

    This report explores the premise that silicon carbide (SiC) devices would reduce substantially the cost of energy of large wind turbines that need power electronics for variable speed generation systems.

  4. Numerical design of SiC bulk crystal growth for electronic applications

    SciTech Connect

    Wejrzanowski, T.; Grybczuk, M.; Kurzydlowski, K. J.; Tymicki, E.

    2014-10-06

    Presented study concerns numerical simulation of Physical Vapor Transport (PVT) growth of bulk Silicon Carbide (SiC) crystals. Silicon Carbide is a wide band gap semiconductor, with numerous applications due to its unique properties. Wider application of SiC is limited by high price and insufficient quality of the product. Those problems can be overcame by optimizing SiC production methods. Experimental optimization of SiC production is expensive because it is time consuming and requires large amounts of energy. Numerical modeling allows to learn more about conditions inside the reactor and helps to optimize the process at much lower cost. In this study several simulations of processes with different reactor geometries were presented along with discussion of reactor geometry influence on obtained monocrystal shape and size.

  5. 40 CFR 372.23 - SIC and NAICS codes to which this Part applies.

    Code of Federal Regulations, 2010 CFR

    2010-07-01

    ... engaged in furnishing services for direct mail advertising including Address list compilers, Address list... under SIC 7331, Direct Mail Advertising Services (mailing list compilers)); 511191Greeting Card... web search portals; 541712Research and Development in the Physical, Engineering, and Life...

  6. High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications

    SciTech Connect

    Whitaker, Mr. Bret; Cole, Mr. Zach; Passmore, Mr. Brandon; Mcnutt, Tyler; Lostetter, Dr. Alex; Ericson, Milton Nance; Frank, Steven; Britton Jr, Charles L; Marlino, Laura D; Mantooth, Alan; Francis, Matt; Lamichhane, Ranjan; Shepherd, Paul; Glover, Michael

    2014-01-01

    This paper presents a high-temperature capable intelligent power module that contains SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter (Fig. 1) to determine the performance of the module in a system level application. The converter was operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The peak efficiency was found to be 97.5% at 2.9 kW.

  7. An infrared pump-probe measurement of the Sm3+6H7/2 lifetime in LiYF4

    NASA Astrophysics Data System (ADS)

    Horvath, Sebastian P.; Wells, Jon-Paul R.; van der Meer, Alexander F. G.; Reid, Michael F.

    2017-04-01

    We report a pump-probe measurement of the lifetime of the 6H7/2 multiplet of Sm3+:LiYF4. A lifetime of 3.1 ± 0.3 ps was inferred for the Y2 level of the 6H7/2 multiplet. This lifetime is two orders of magnitude faster than for a similar energy gap in Nd3+:LiYF4, and does not follow the prediction of a simple exponential energy-gap law for non-radiative relaxation in this material.

  8. On the structure and reactivity of small iron clusters with benzene, [Fen-C6H6]0,+,-, n ⩽ 7: A theoretical study

    NASA Astrophysics Data System (ADS)

    Valencia, Israel

    2016-09-01

    The structural, energetic, electronic, vibrational, and magnetic properties of iron-benzene clusters, Fen-C6H6, n ⩽ 7, were calculated using an all-electron density functional theory, DFT, with the generalized gradient approximation and the 6-311++G(2d,2p) basis set. A proposal regarding the mechanism of the adsorption of benzene on iron clusters related to the charge transfer model is described. A direct relation between the calculated electron affinity, EA, of the Fen-C6H6 clusters and their reactivity were also determined.

  9. Effect of ammonia excess on the crystal habit of NiNH4PO4.6H2O (Ni-struvite)

    NASA Astrophysics Data System (ADS)

    Abbona, F.; Angela-Franchini, M.; Bono, C. Croni; Madsen, H. E. Lundager

    1994-10-01

    The change of crystal habit and the repeated nucleations of NiNH4PO4.6H2O (Ni-struvite) occurring as a consequence of NH3 addition to a solution of nickel and phosphate ions (the concentration of Ni = the concentration of PO4 = 5mM) are described and interpreted. The amorphous compound Ni(OH)2, which always accompanies the crystallization of Ni-struvite, and the Ni-NH3 complexes play a determining role in the process. The isomorphous MgNH4PO.6H2O (struvite), grown under the same conditions, shows a totally different crystal habit.

  10. Development of Gate and Base Drive Using SiC Junction Field Effect Transistors

    DTIC Science & Technology

    2008-05-01

    Development of Gate and Base Drive Using SiC Junction Field Effect Transistors by Timothy E. Griffin ARL-TR-4475 May 2008...Development of Gate and Base Drive Using SiC Junction Field Effect Transistors Timothy E. Griffin Sensors and Electron Devices...Effect Transistors 5c. PROGRAM ELEMENT NUMBER 5d. PROJECT NUMBER 5e. TASK NUMBER 6. AUTHOR(S) Timothy E. Griffin 5f. WORK UNIT NUMBER

  11. SiC Armor Tiles via Magnetic Compaction and Pressureless Sintering

    DTIC Science & Technology

    2008-01-27

    Ceramatec, ORNL ,ARMY and UDRI Unclassified 7Cocoa Beach 2008 What is Dynamic Magnetic Compaction? Dynamic Kinetic process High compaction pressure for sub...1Cocoa Beach 2008 SiC Armor Tiles via Magnetic Compaction and Pressureless Sintering B. Chelluri, and E. A. Knoth, IAP Research, Inc. L. P. Franks...TITLE AND SUBTITLE SiC Armor Tiles via Magnetic Compaction and Pressureless Sintering 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER

  12. Chemically Resolved Interface Structure of Epitaxial Graphene on SiC(0001)

    DTIC Science & Technology

    2013-11-19

    Chemically Resolved Interface Structure of Epitaxial Graphene on SiC(0001) Jonathan D. Emery,1 Blanka Detlefs,2 Hunter J. Karmel,1 Luke O. Nyakiti,3...unique properties that can be significantly modified through interaction with an underlying support. For epitaxial graphene on SiC(0001), the...interface strongly influences the electronic properties of the overlaying graphene . We demonstrate a novel combination of x-ray scattering and spectroscopy

  13. Effect of deposition temperature on the properties of pyrolytic SiC

    NASA Astrophysics Data System (ADS)

    Xu, S. J.; Zhou, J. G.; Yang, B.; Zhang, B. Z.

    1995-07-01

    TRISO-coated fuel particles have been chosen for the fuel of our 10 MW HTR experimental reactor. SiC is the key component of the coatings for TRISO coated particles. In the present work, the study of the effect of the deposition temperature on the density, surface morphology, fracture surface structure, strength and Young's modulus of the deposited SiC is reported.

  14. Influence of Tile Geometry on the Dynamic Fracture of Silicon Carbide (SiC)

    DTIC Science & Technology

    2014-03-01

    Influence of Tile Geometry on the Dynamic Fracture of Silicon Carbide (SiC) by Jacqueline T. Le and Shane D. Bartus ARL-TR-6861 March...Influence of Tile Geometry on the Dynamic Fracture of Silicon Carbide (SiC) Jacqueline T. Le George Washington University Shane D...5a. CONTRACT NUMBER W911NF-10-2-0076 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S) Jacqueline T. Le * and Shane D. Bartus 5d

  15. Modeling the Elastic Modulus of 2D Woven CVI SiC Composites

    NASA Technical Reports Server (NTRS)

    Morscher, Gregory N.

    2006-01-01

    The use of fiber, interphase, CVI SiC minicomposites as structural elements for 2D-woven SiC fiber reinforced chemically vapor infiltrated (CVI) SiC matrix composites is demonstrated to be a viable approach to model the elastic modulus of these composite systems when tensile loaded in an orthogonal direction. The 0deg (loading direction) and 90deg (perpendicular to loading direction) oriented minicomposites as well as the open porosity and excess SiC associated with CVI SiC composites were all modeled as parallel elements using simple Rule of Mixtures techniques. Excellent agreement for a variety of 2D woven Hi-Nicalon(TradeMark) fiber-reinforced and Sylramic-iBN reinforced CVI SiC matrix composites that differed in numbers of plies, constituent content, thickness, density, and number of woven tows in either direction (i.e, balanced weaves versus unbalanced weaves) was achieved. It was found that elastic modulus was not only dependent on constituent content, but also the degree to which 90deg minicomposites carried load. This depended on the degree of interaction between 90deg and 0deg minicomposites which was quantified to some extent by composite density. The relationships developed here for elastic modulus only necessitated the knowledge of the fractional contents of fiber, interphase and CVI SiC as well as the tow size and shape. It was concluded that such relationships are fairly robust for orthogonally loaded 2D woven CVI SiC composite system and can be implemented by ceramic matrix composite component modelers and designers for modeling the local stiffness in simple or complex parts fabricated with variable constituent contents.

  16. SiC growth by Solvent-Laser Heated Floating Zone

    NASA Technical Reports Server (NTRS)

    Woodworth, Andrew A.; Neudeck, Philip G.; Sayir, Ali; Spry, David J.; Trunek, Andrew J.; Powell, J. Anthony

    2011-01-01

    In an effort to grow single crystal SiC fibers for seed crystals the following two growth methods have been coupled in this work: traveling solvent and laser heated floating zone to create the solvent-laser heated floating zone (Solvent-LHFZ) crystal growth method. This paper discusses the results of these initial experiments, which includes: source material, laser heating, and analysis of the first ever Solvent-LHFZ SiC crystals (synchrotron white beam x-ray topography confirmed).

  17. Microwave-assisted pyrolysis of SiC and its application to joining

    SciTech Connect

    Ahmad, I.; Silberglitt, R.; Shan, T.A.

    1995-07-01

    Microwave energy has been used to pyrolyze silicon carbide from commercially available polycarbosilane precursor. The pyrolysis was performed on SiC surfaces having various surface treatments, to identify conditions which improve the wetting and adherence. Grinding and etching of the surfaces in hydrofluoric (HF) acid promotes the bonding of precursor derived ceramic to the SiC ceramic. Finally, the polycarbosilane precursor mixed with fine silicon carbide powder was used as the interlayer material to join silicon carbide specimens.

  18. The development of chemically vapor deposited mullite coatings for the corrosion protection of SiC

    SciTech Connect

    Auger, M.; Hou, P.; Sengupta, A.; Basu, S.; Sarin, V.

    1998-05-01

    Crystalline mullite coatings have been chemically vapor deposited onto SiC substrates to enhance the corrosion and oxidation resistance of the substrate. Current research has been divided into three distinct areas: (1) Development of the deposition processing conditions for increased control over coating`s growth rate, microstructure, and morphology; (2) Analysis of the coating`s crystal structure and stability; (3) The corrosion resistance of the CVD mullite coating on SiC.

  19. Resistance switching in a SiC nanowire/Au nanoparticle network

    NASA Astrophysics Data System (ADS)

    Mori, Y.; Kohno, H.

    2009-07-01

    Resistance switching in a semiconductor nanowire/metal nanoparticle system is demonstrated. SiC nanowires grown on a Si substrate and decorated with Au nanoparticles are measured using W microprobes in a scanning electron microscope, where one probe is grounded and the other is biased. HIGH and LOW states can be toggled by applying a negative or positive pulse voltage. The switching mechanism is attributed to a charge transfer between the SiC nanowires and the Au nanoparticles.

  20. Ultra-Low-Cost Room Temperature SiC Thin Films

    NASA Technical Reports Server (NTRS)

    Faur, Maria

    1997-01-01

    The research group at CSU has conducted theoretical and experimental research on 'Ultra-Low-Cost Room Temperature SiC Thin Films. The effectiveness of a ultra-low-cost room temperature thin film SiC growth technique on Silicon and Germanium substrates and structures with applications to space solar sells, ThermoPhotoVoltaic (TPV) cells and microelectronic and optoelectronic devices was investigated and the main result of this effort are summarized.

  1. Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation

    SciTech Connect

    Ikeda, Akihiro; Nishi, Koji; Ikenoue, Hiroshi; Asano, Tanemasa

    2013-02-04

    Phosphorus doping of 4H SiC is performed by KrF excimer laser irradiation of 4H SiC immersed in phosphoric acid. Phosphorus is incorporated to a depth of a few tens of nanometers at a concentration of over 10{sup 20}/cm{sup 3} without generating significant crystal defects. Formation of a pn junction diode with an ideality factor of 1.06 is demonstrated.

  2. Evaluation of surface recombination of SiC for development of bipolar devices

    NASA Astrophysics Data System (ADS)

    Kato, Masashi

    2016-09-01

    Ultra-high voltage power devices are employed for management of power networks. Si-based semiconductor devices have been developed for such the power devices. Maximum breakdown voltages of Si devices are of the order of kV. When the voltage in the power network was higher than the breakdown voltage of the devices, the devices were connected in series. The series connection introduces high resistance and power loss. To overcome this series resistance problem, it has been suggested that utilization of silicon carbide (SiC) devices. SiC has much higher breakdown electric field than Si, and thus high voltage in the power networks can be managed by SiC device without the series connection. Therefore, development of ultra-high voltage SiC device will decrease resistance and power loss in the power networks. However, there are several difficulties to develop ultra-high voltage SiC devices. One of the difficulties is control of the carrier lifetime. In fact, ultra-high voltage devices are fabricated with bipolar structure, and, in the bipolar devices, the carrier lifetime is highly influential on resistance and power loss. The carrier lifetime is limited by several factors, and one of the most important factors is the surface recombination. Therefore, evaluation and control of the surface recombination is essential to develop ultra-high voltage SiC devices. In this paper, we will report evaluation techniques for the surface recombination of SiC. In addition, dependence of the surface recombination on surface treatments, crystal faces and temperature are shown. The evaluated surface recombination velocities will support development of ultra-high voltage SiC devices.

  3. The reactions of para-halo diaryl diselenides with halogens. A structural investigation of the CT compound (p-FC6H4)2Se2I2, and the first reported “RSeI3” compound, (p-ClC6H4)SeI·I2, which contains a covalent Se-I bond.

    PubMed

    Barnes, Nicholas A; Godfrey, Stephen M; Hughes, Jill; Khan, Rana Z; Mushtaq, Imrana; Ollerenshaw, Ruth T A; Pritchard, Robin G; Sarwar, Shamsa

    2013-02-28

    The reactions of the diaryl-diselenides (p-FC(6)H(4))(2)Se(2) and (p-ClC(6)H(4))(2)Se(2) with diiodine have been investigated. Species of stoichiometry "RSeI" are formed when the ratio employed is 1:1. The solid-state structure of "(p-FC(6)H(4))SeI" has been determined, and shown to be a charge-transfer (CT) adduct, (p-FC(6)H(4))(2)Se(2)I(2), where the Se-Se bond is retained and the diiodine molecule interacts with only one of the selenium atoms. The Se-I bond in (p-FC(6)H(4))(2)Se(2)I(2) is 2.9835(12) Å, which is typical for a (10-I-2) Se-I-I CT system. When diiodine is reacted in a 3:1 ratio with (p-XC(6)H(4))(2)Se(2) (X = F, Cl) species of stoichiometry "RSeI(3)" are formed. The structure of "(p-ClC(6)H(4))SeI(3)" reveals that this is not a selenium(IV) compound, but is better represented as a selenium(II) CT adduct, (p-ClC(6)H(4))SeI·I(2). The Se-I bond to the diiodine molecule is typical in magnitude for a CT adduct, Se-I: 2.8672(5) Å, whereas the other Se-I bond is much shorter, Se-I: 2.5590(6) Å, and is a genuine example of a rarely observed covalent Se-I bond, which appears to be stabilised by a weak Se···I interaction from a neighbouring iodine atom. The reaction of (p-ClC(6)H(4))SeI with Ph(3)P results in the formation of a CT adduct, Ph(3)PSe(p-ClC(6)H(4))I, which has a T-shaped geometry at selenium (10-Se-3). By contrast, the reaction of (p-FC(6)H(4))SeI with Ph(3)P does not form an adduct, but results in the formation of Ph(3)PI(2) and (p-FC(6)H(4))(2)Se(2).

  4. Effect of Ductile Agents on the Dynamic Behavior of SiC3D Network Composites

    NASA Astrophysics Data System (ADS)

    Zhu, Jingbo; Wang, Yangwei; Wang, Fuchi; Fan, Qunbo

    2016-10-01

    Co-continuous SiC ceramic composites using pure aluminum, epoxy, and polyurethane (PU) as ductile agents were developed. The dynamic mechanical behavior and failure mechanisms were investigated experimentally using the split Hopkinson pressure bar (SHPB) method and computationally by finite element (FE) simulations. The results show that the SiC3D/Al composite has the best overall performance in comparison with SiC3D/epoxy and SiC3D/PU composites. FE simulations are generally consistent with experimental data. These simulations provide valuable help in predicting mechanical strength and in interpreting the experimental results and failure mechanisms. They may be combined with micrographs for fracture characterizations of the composites. We found that interactions between the SiC phase and ductile agents under dynamic compression in the SHPB method are complex, and that interfacial condition is an important parameter that determines the mechanical response of SiC3D composites with a characteristic interlocking structure during dynamic compression. However, the effect of the mechanical properties of ductile agents on dynamic behavior of the composites is a second consideration in the production of the composites.

  5. A SiC MOSFET Based Inverter for Wireless Power Transfer Applications

    SciTech Connect

    Onar, Omer C; Chinthavali, Madhu Sudhan; Campbell, Steven L; Ning, Puqi; White, Cliff P; Miller , John M.

    2014-01-01

    In a wireless power transfer (WPT) system, efficiency of the power conversion stages is crucial so that the WPT technology can compete with the conventional conductive charging systems. Since there are 5 or 6 power conversion stages, each stage needs to be as efficient as possible. SiC inverters are crucial in this case; they can handle high frequency operation and they can operate at relatively higher temperatures resulting in reduces cost and size for the cooling components. This study presents the detailed power module design, development, and fabrication of a SiC inverter. The proposed inverter has been tested at three center frequencies that are considered for the WPT standardization. Performance of the inverter at the same target power transfer level is analyzed along with the other system components. In addition, another SiC inverter has been built in authors laboratory by using the ORNL designed and developed SiC modules. It is shown that the inverter with ORNL packaged SiC modules performs simular to that of the inverter having commercially available SiC modules.

  6. Mechanical Properties and Elastic Constants Due to Damage Accumulation and Amorphization in SiC

    SciTech Connect

    Gao, Fei; Weber, William J.

    2004-06-28

    Damage accumulation due to cascade overlap, which was simulated previously, has been used to study the changes of elastic constants, bulk and elastic moduli as a function of dose. These mechanical properties generally decrease with increasing dose, and the rapid decrease at low-dose level indicates that point defects and small clusters play an important role in the changes of elastic constants rather than topological disorder. The internal strain relaxation has no effect on the elastic constants, C11 and C12, in perfect SiC, but it has a significant influence on all elastic constants calculated in damaged SiC. The elastic constants in the cascade-amorphized (CA) SiC decrease about 19%, 29% and 46% for C11, C12 and C44, respectively. The bulk modulus decrease 23% and the elastic modulus decreases 29%, which is consistent with experimental measurements. The stability of both the perfect SiC and CA-SiC under hydrostatic tension has been also investigated. All mechanical properties in the CA-SiC exhibit behavior similar to that in perfect SiC, but the critical stress at which the CA-SiC becomes structurally unstable is one order of magnitude smaller than that for perfect SiC.

  7. Packaging Technologies for 500C SiC Electronics and Sensors

    NASA Technical Reports Server (NTRS)

    Chen, Liang-Yu

    2013-01-01

    Various SiC electronics and sensors are currently under development for applications in 500C high temperature environments such as hot sections of aerospace engines and the surface of Venus. In order to conduct long-term test and eventually commercialize these SiC devices, compatible packaging technologies for the SiC electronics and sensors are required. This presentation reviews packaging technologies developed for 500C SiC electronics and sensors to address both component and subsystem level packaging needs for high temperature environments. The packaging system for high temperature SiC electronics includes ceramic chip-level packages, ceramic printed circuit boards (PCBs), and edge-connectors. High temperature durable die-attach and precious metal wire-bonding are used in the chip-level packaging process. A high temperature sensor package is specifically designed to address high temperature micro-fabricated capacitive pressure sensors for high differential pressure environments. This presentation describes development of these electronics and sensor packaging technologies, including some testing results of SiC electronics and capacitive pressure sensors using these packaging technologies.

  8. Modeling and testing miniature torsion specimens for SiC joining development studies for fusion

    DOE PAGES

    Henager, Jr., C. H.; Nguyen, Ba N.; Kurtz, Richard J.; ...

    2015-08-05

    The international fusion community has designed a miniature torsion specimen for neutron irradiation studies of joined SiC and SiC/SiC composite materials. For this research, miniature torsion joints based on this specimen design were fabricated using displacement reactions between Si and TiC to produce Ti3SiC2 + SiC joints with SiC and tested in torsion-shear prior to and after neutron irradiation. However, many miniature torsion specimens fail out-of-plane within the SiC specimen body, which makes it problematic to assign a shear strength value to the joints and makes it difficult to compare unirradiated and irradiated strengths to determine irradiation effects. Finite elementmore » elastic damage and elastic–plastic damage models of miniature torsion joints are developed that indicate shear fracture is more likely to occur within the body of the joined sample and cause out-of-plane failures for miniature torsion specimens when a certain modulus and strength ratio between the joint material and the joined material exists. The model results are compared and discussed with regard to unirradiated and irradiated test data for a variety of joint materials. The unirradiated data includes Ti3SiC2 + SiC/CVD-SiC joints with tailored joint moduli, and includes steel/epoxy and CVD-SiC/epoxy joints. Finally, the implications for joint data based on this sample design are discussed.« less

  9. Velcro-Inspired SiC Fuzzy Fibers for Aerospace Applications.

    PubMed

    Hart, Amelia H C; Koizumi, Ryota; Hamel, John; Owuor, Peter Samora; Ito, Yusuke; Ozden, Sehmus; Bhowmick, Sanjit; Syed Amanulla, Syed Asif; Tsafack, Thierry; Keyshar, Kunttal; Mital, Rahul; Hurst, Janet; Vajtai, Robert; Tiwary, Chandra Sekhar; Ajayan, Pulickel M

    2017-04-05

    The most recent and innovative silicon carbide (SiC) fiber ceramic matrix composites, used for lightweight high-heat engine parts in aerospace applications, are woven, layered, and then surrounded by a SiC ceramic matrix composite (CMC). To further improve both the mechanical properties and thermal and oxidative resistance abilities of this material, SiC nanotubes and nanowires (SiCNT/NWs) are grown on the surface of the SiC fiber via carbon nanotube conversion. This conversion utilizes the shape memory synthesis (SMS) method, starting with carbon nanotube (CNT) growth on the SiC fiber surface, to capitalize on the ease of dense surface morphology optimization and the ability to effectively engineer the CNT-SiC fiber interface to create a secure nanotube-fiber attachment. Then, by converting the CNTs to SiCNT/NWs, the relative morphology, advantageous mechanical properties, and secure connection of the initial CNT-SiC fiber architecture are retained, with the addition of high temperature and oxidation resistance. The resultant SiCNT/NW-SiC fiber can be used inside the SiC ceramic matrix composite for a high-heat turbo engine part with longer fatigue life and higher temperature resistance. The differing sides of the woven SiCNT/NWs act as the "hook and loop" mechanism of Velcro but in much smaller scale.

  10. Sizing SiC Storage Inverters for Fast Grid Frequency Support

    SciTech Connect

    Hoke, Anderson; Bennion, Kevin; Gevorgian, Vahan; Chakraborty, Sudipta; Muljadi, Eduard

    2015-11-02

    As wind and solar displace synchronous generators whose inertia stabilizes the AC grid frequency on fast time scales, it has been proposed to use energy storage systems (ESSs) to mitigate frequency transient events. Such events require a rapid surge of power from the ESS, but they occur only rarely. The high temperature tolerance of SiC MOSFETs and diodes presents an opportunity for innovative ESS inverter designs. Herein we investigate a SiC ESS inverter design such that the SiC device ratings are obeyed during mild frequency events but are exceeded during rare, major events, for a potentially more economical inverter design. In support of this proposal we present: 1. An analysis of four years of grid frequency events in the U.S. Western Interconnection. 2. A switch-level ESS inverter simulation using SiC devices with detailed loss estimates. 3. Thermal analysis of the SiC power modules during a worst-case frequency event, showing that the modules can likely withstand the brief overcurrent. This analysis supports the conclusion that it may be advantageous for economical designs (acknowledging the increased risks) to undersize the SiC switches when designing inverters to perform active power control for grid frequency support. Such a strategy may result in SiC-based designs being more competitive with less costly silicon IGBT-based designs.

  11. Modeling and testing miniature torsion specimens for SiC joining development studies for fusion

    NASA Astrophysics Data System (ADS)

    Henager, C. H.; Nguyen, B. N.; Kurtz, R. J.; Roosendaal, T. J.; Borlaug, B. A.; Ferraris, M.; Ventrella, A.; Katoh, Y.

    2015-11-01

    The international fusion community has designed a miniature torsion specimen for neutron irradiation studies of joined SiC and SiC/SiC composite materials. Miniature torsion joints based on this specimen design were fabricated using displacement reactions between Si and TiC to produce Ti3SiC2 + SiC joints with SiC and tested in torsion-shear prior to and after neutron irradiation. However, many miniature torsion specimens fail out-of-plane within the SiC specimen body, which makes it problematic to assign a shear strength value to the joints and makes it difficult to compare unirradiated and irradiated strengths to determine irradiation effects. Finite element elastic damage and elastic-plastic damage models of miniature torsion joints are developed that indicate shear fracture is more likely to occur within the body of the joined sample and cause out-of-plane failures for miniature torsion specimens when a certain modulus and strength ratio between the joint material and the joined material exists. The model results are compared and discussed with regard to unirradiated and irradiated test data for a variety of joint materials. The unirradiated data includes Ti3SiC2 + SiC/CVD-SiC joints with tailored joint moduli, and includes steel/epoxy and CVD-SiC/epoxy joints. The implications for joint data based on this sample design are discussed.

  12. U.S. Department of Energy Accident Resistant SiC Clad Nuclear Fuel Development

    SciTech Connect

    George W. Griffith

    2011-10-01

    A significant effort is being placed on silicon carbide ceramic matrix composite (SiC CMC) nuclear fuel cladding by Light Water Reactor Sustainability (LWRS) Advanced Light Water Reactor Nuclear Fuels Pathway. The intent of this work is to invest in a high-risk, high-reward technology that can be introduced in a relatively short time. The LWRS goal is to demonstrate successful advanced fuels technology that suitable for commercial development to support nuclear relicensing. Ceramic matrix composites are an established non-nuclear technology that utilizes ceramic fibers embedded in a ceramic matrix. A thin interfacial layer between the fibers and the matrix allows for ductile behavior. The SiC CMC has relatively high strength at high reactor accident temperatures when compared to metallic cladding. SiC also has a very low chemical reactivity and doesn't react exothermically with the reactor cooling water. The radiation behavior of SiC has also been studied extensively as structural fusion system components. The SiC CMC technology is in the early stages of development and will need to mature before confidence in the developed designs can created. The advanced SiC CMC materials do offer the potential for greatly improved safety because of their high temperature strength, chemical stability and reduced hydrogen generation.

  13. Elaboration and characterization of luminescent porous SiC microparticles/poly vinyl alcohol thin films

    NASA Astrophysics Data System (ADS)

    Kaci, S.; Mansouri, H.; Bozetine, I.; Keffous, A.; Guerbous, L.; Siahmed, Y.; Aissiou, S.

    2017-02-01

    In this study, Morphological, optical and photoluminescence characterizations of nanostructured SiC micropowder embedded in PVA matrix and deposited as thin films on glass substrates are reported. we prepared the porous SiC microparticles/PVA thin films by spin coating method. The average size of SiC microparticles were 7 μm. An electroless method was used for producing porous silicon carbide powder under UV irradiation. Silver nanoparticles coated SiC powder was formed by polyol process. The etchant was composed of aqueous HF and different oxidants. Various porous morphologies were obtained and studied as a function of oxidant type, etching time, and wavelength of irradiation. We concluded that the chemical etching conditions of SiC powder seems to have a large impact on the resulting properties. We noticed that the best photoluminescence property was achieved when SiC powder was etched in HF/K2S2O8 at reaction temperature of 80 °C for t = 40min and under UV light of 254 nm.

  14. The Development of SiC MOSFET-based Switching Power Amplifiers for Fusion Science

    NASA Astrophysics Data System (ADS)

    Prager, James; Ziemba, Timothy; Miller, Kenneth; Picard, Julian

    2015-11-01

    Eagle Harbor Technologies (EHT), Inc. is developing a switching power amplifier (SPA) based on silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. EHT has conducted single device testing that directly compares the capabilities of SiC MOSFETs and IGBTs to demonstrate the utility of SiC MOSFETs for fusion science applications. These devices have been built into a SPA that can drive resistive loads and resonant tank loads at 800 V, 4.25 kA at pulse repetition frequencies up to 1 MHz. During the Phase II program, EHT will finalize the design of the SPA. In Year 2, EHT will replace the SPAs used in the HIT-SI lab at the University of Washington to allow for operation over 100 kHz. SPA prototype results will be presented. This work is supported under DOE Grant # DE-SC0011907.

  15. Si/C hybrid nanostructures for Li-ion anodes: An overview

    NASA Astrophysics Data System (ADS)

    Terranova, Maria Letizia; Orlanducci, Silvia; Tamburri, Emanuela; Guglielmotti, Valeria; Rossi, Marco

    2014-01-01

    This review article summarizes recent and increasing efforts in the development of novel Li ion cell anode nanomaterials based on the coupling of C with Si. The rationale behind such efforts is based on the fact that the Si-C coupling realizes a favourable combination of the two materials properties, such as the high lithiation capacity of Si and the mechanical and conductive properties of C, making Si/C hybrid nanomaterials the ideal candidates for innovative and improved Li-ion anodes. Together with an overview of the methodologies proposed in the last decade for material preparation, a discussion on relationship between organization at the nanoscale of the hybrid Si/C systems and battery performances is given. An emerging indication is that the enhancement of the batteries efficiency in terms of mass capacity, energy density and cycling stability, resides in the ability to arrange Si/C bi-component nanostructures in pre-defined architectures. Starting from the results obtained so far, this paper aims to indicate some emerging directions and to inspire promising routes to optimize fabrication of Si/C nanomaterials and engineering of Li-ion anodes structures. The use of Si/C hybrid nanostructures could represents a viable and effective solution to the foreseen limits of present lithium ion technology.

  16. Synthesis and characterization of Ti(3)SiC(2)

    NASA Astrophysics Data System (ADS)

    El-Raghy, Tamer Saad

    For the first time, bulk, single phase, fully dense Tisb3SiCsb2 samples were fabricated by hot pressing or hot isostatic pressing of Ti, SiC, and C powders. This compound is as readily machinable as graphite, has a Young's modulus of 325 GPa and a hardness of 4 GPa. Its electrical conductivity is 4.5×10sp6\\ Omegasp{-1}\\ msp{-1}. The thermal expansion coefficient in the temperature range 25 to 1000sp°C, the room temperature thermal conductivity, and heat capacity are, respectively, 9.2×10sp{-6}\\ sp° Csp{-1}, 43 W/m.K and 588 J/kg K. By controlling the process, the final grain size fabricated was fine (3-5 mum) or coarse (100-200 mum). For both microstructures the failure is brittle at room temperature, but above 1200sp°C the failure is ductile. At 1300sp°C, both microstructures exhibited high levels of plasticity (>20%). Both the fine and the coarse grained materials were found to be damage tolerant. Although the coarse grains material is not susceptible to thermal shock up to 1400sp°C, the fine grains material was found to thermal shock between 750 and 1000sp°C. Oriented macro-grains (1-4 mm) of Tisb3SiCsb2 were fabricated to study the deformation mechanism. We have shown conclusively that there is an active slip system (across the basal planes) at room temperature which results in the room temperature plasticity. It was found that grain buckling and cavities formation are two mechanisms by which the material accommodates the strain. The oxidation was parabolic with parabolic rate constants, ksb{p}, that increased from 1×10sp{-9} to 1×10sp{-4}\\ kgsp2msp{-4}ssp{-1} as the temperature increased from 900 to 1400sp°C, respectively, which yielded an activation energy of 370 ± 20 kJ/mol. The scale that forms was dense, adhesive, resistant to thermal cycling and layered. Carburization, nitridation and siliconization resulted in the formation of, respectively, TiCsb{x}, TiN-TiCsb{x}-SiC and TiSisb2-SiC surface layers. In general the surface treatments

  17. Solid-like and liquid-like behaviour in small benzene clusters. A molecular dynamics simulation of (C 6H 6) 4

    NASA Astrophysics Data System (ADS)

    Del Mistro, G.; Stace, A. J.

    1990-08-01

    Molecular dynamics simulations have been performed on the cluster (C 6H 6) 4 with the individual molecules being treated as rigid rotors. Behaviour characteristic of melting is observed at internal temperatures as low as 80 K. It is concluded that the clusters begin to exhibit liquid-like properties when individual molecules acquire sufficient kinetic energy to execute large-ampli- tude motion.

  18. FeCl3·6H2O, a catalyst for the diastereoselective synthesis of cis-isoxazolidines from N-protected δ-hydroxylamino allylic acetates.

    PubMed

    Cornil, Johan; Guérinot, Amandine; Reymond, Sébastien; Cossy, Janine

    2013-10-18

    An ecofriendly and diastereoselective synthesis of cis-3,5-disubstituted isoxazolidines through the FeCl3·6H2O-catalyzed cyclization of δ-hydroxylamino allylic acetates is described. The synthetic potential of these products is highlighted by the preparation of several functionalized 1,3-amino alcohol precursors.

  19. Segregation of Incomplete Achromatopsia and Alopecia Due to PDE6H and LPAR6 Variants in a Consanguineous Family from Pakistan

    PubMed Central

    Pedurupillay, Christeen Ramane J.; Landsend, Erlend Christoffer Sommer; Vigeland, Magnus Dehli; Ansar, Muhammad; Frengen, Eirik; Misceo, Doriana; Strømme, Petter

    2016-01-01

    We report on two brothers with visual impairment, and non-syndromic alopecia in the elder proband. The parents were first-degree Pakistani cousins. Whole exome sequencing of the elder brother and parents, followed by Sanger sequencing of all four family members, led to the identification of the variants responsible for the two phenotypes. One variant was a homozygous nonsense variant in the inhibitory subunit of the cone-specific cGMP phosphodiesterase gene, PDE6H:c.35C>G (p.Ser12*). PDE6H is expressed in the cones of the retina, which are involved in perception of color vision. This is the second report of a homozygous PDE6H:c.35C>G variant causing incomplete achromatopsia (OMIM 610024), thus strongly supporting the hypothesis that loss-of-function variants in PDE6H cause this visual deficiency phenotype. The second variant was a homozygous missense substitution in the lysophosphatidic acid receptor 6, LPAR6:c.188A>T (p.Asp63Val). LPAR6 acts as a G-protein-coupled receptor involved in hair growth. Biallelic loss-of-function variants in LPAR6 cause hypotrichosis type 8 (OMIM 278150), with or without woolly hair, a form of non-syndromic alopecia. Biallelic LPAR6:c.188A>T was previously described in five families from Pakistan. PMID:27472364

  20. Fluoroantimonic acid hexahydrate (HSbF6-6H2O) catalysis: The ring-opening polymerization of epoxidized soybean oil

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Ring-opening polymerization of epoxidized soybean oil (ESO) catalyzed by a super acid, fluroantimonic acid hexahydrate (HSbF6-6H2O), in ethyl acetate was conducted in an effort to develop useful biodegradable polymers. The resulting polymerized ESO (SA-RPESO) were characterized by using infrared (IR...

  1. Ring-opening polymerization of epoxidized soybean oil catalyzed by the superacid, Fluroantimonic acid hexahydrate (HSbF6-6H2O)

    Technology Transfer Automated Retrieval System (TEKTRAN)

    Ring-opening polymerization of epoxidized soybean oil (ESO) catalyzed by the super acid, fluroantimonic acid hexahydrate (HSbF6-6H2O), in ethyl acetate was conducted. The resulting polymers, SA-RPESO, were characterized using infrared spectroscopy, differential scanning calorimetry, thermogravimetri...

  2. Exciton-polariton state in nanocrystalline SiC films

    NASA Astrophysics Data System (ADS)

    Semenov, A. V.; Lopin, A. V.

    2016-05-01

    We studied the features of optical absorption in the films of nanocrystalline SiC (nc-SiC) obtained on the sapphire substrates by the method of direct ion deposition. The optical absorption spectra of the films with a thickness less than ~500 nm contain a maximum which position and intensity depend on the structure and thickness of the nc-SiC films. The most intense peak at 2.36 eV is observed in the nc-SiC film with predominant 3C-SiC polytype structure and a thickness of 392 nm. Proposed is a resonance absorption model based on excitation of exciton polaritons in a microcavity. In the latter, under the conditions of resonance, there occurs strong interaction between photon modes of light with λph=521 nm and exciton of the 3С polytype with an excitation energy of 2.36 eV that results in the formation of polariton. A mismatch of the frequencies of photon modes of the cavity and exciton explains the dependence of the maximum of the optical absorption on the film thickness.

  3. SiC Die Attach for High-Temperature Applications

    NASA Astrophysics Data System (ADS)

    Drevin-Bazin, A.; Lacroix, F.; Barbot, J.-F.

    2013-11-01

    Eutectic solders AuIn19 and AuGe12 and nanosilver paste were investigated for SiC die attach in high-temperature (300°C) applications. The soldering or sintering conditions were optimized through die shear tests performed at room temperature. In particular, application of static pressure (3.5 MPa) during sintering resulted in greatly improved mechanical behavior of the nanosilver-based joint. Microstructural study of the eutectic solders showed formation of Au-rich grains in AuGe die attach and significant diffusion of Au and In through the Ni layer in AuIn19 die attach, which could lead to formation of intermetallic compounds. Die shear tests versus temperature showed that the behaviors of the studied die attaches are different; nevertheless they present suitable shear strengths required for high-temperature applications. The mechanical behavior of joints under various levels of thermal and mechanical stress was also studied. Creep experiments were carried out on the eutectic solders to describe the thermomechanical behavior of the complete module; only one creep mechanism was observed in the working range.

  4. Amplifiers dedicated for large area SiC photodiodes

    NASA Astrophysics Data System (ADS)

    Doroz, P.; Duk, M.; Korwin-Pawlowski, M. L.; Borecki, M.

    2016-09-01

    Large area SiC photodiodes find applications in optoelectronic sensors working at special conditions. These conditions include detection of UV radiation in harsh environment. Moreover, the mentioned sensors have to be selective and resistant to unwanted signals. For this purpose, the modulation of light at source unit and the rejection of constant current and low frequency component of signal at detector unit are used. The popular frequency used for modulation in such sensor is 1kHz. The large area photodiodes are characterized by a large capacitance and low shunt resistance that varies with polarization of the photodiode and can significantly modify the conditions of signal pre-amplification. In this paper two pre-amplifiers topology are analyzed: the transimpedance amplifier and the non-inverting voltage to voltage amplifier with negative feedback. The feedback loops of both pre-amplifiers are equipped with elements used for initial constant current and low frequency signals rejections. Both circuits are analyzed and compared using simulation and experimental approaches.

  5. Pleiotropy in microdeletion syndromes: neurologic and spermatogenic abnormalities in mice homozygous for the p6H deletion are likely due to dysfunction of a single gene.

    PubMed

    Rinchik, E M; Carpenter, D A; Handel, M A

    1995-07-03

    Variability and complexity of phenotypes observed in microdeletion syndromes can be due to deletion of a single gene whose product participates in several aspects of development or can be due to the deletion of a number of tightly linked genes, each adding its own effect to the syndrome. The p6H deletion in mouse chromosome 7 presents a good model with which to address this question of multigene vs. single-gene pleiotropy. Mice homozygous for the p6H deletion are diluted in pigmentation, are smaller than their littermates, and manifest a nervous jerky-gait phenotype. Male homozygotes are sterile and exhibit profound abnormalities in spermiogenesis. By using N-ethyl-N-nitrosourea (EtNU) mutagenesis and a breeding protocol designed to recover recessive mutations expressed hemizygously opposite a large p-locus deletion, we have generated three noncomplementing mutations that map to the p6H deletion. Each of these EtNU-induced mutations has adverse effects on the size, nervous behavior, and progression of spermiogenesis that characterize p6H deletion homozygotes. Because EtNU is thought to induce primarily intragenic (point) mutations in mouse stem-cell spermatogonia, we propose that the trio of phenotypes (runtiness, nervous jerky gait, and male sterility) expressed in p6H deletion homozygotes is the result of deletion of a single highly pleiotropic gene. We also predict that a homologous single locus, quite possibly tightly linked and distal to the D15S12 (P) locus in human chromosome 15q11-q13, may be associated with similar developmental abnormalities in humans.

  6. Structural and photophysical properties of HPPCO (4-hydroxy-5-phenyl-6H-pyrido[3,2,1-jk]carbazol-6-one) derivatives

    NASA Astrophysics Data System (ADS)

    Jeong, Yong-Kwang; Kim, Min-Ah; Lee, Hyo-Sung; Kim, Jong-Moon; Lee, Sung Woo; Kang, Jun-Gill

    2015-01-01

    Proton-substitution effects of 4-hydroxy-5-phenyl-6H-pyrido[3,2,1-jk]carbazol-6-one (HPPCO) on structural and photophysical properties were presented. HPPCO crystallized in the orthorhombic space group Pbca with an intermolecular hydrogen bonding between OH and oxygen atom of the carbonyl. The proton-substituted derivatives, 6-oxo-5-phenyl-6H-pyrido[3,2,1-jk]carbazol-4-yl acetate (OPPCA) and 6-oxo-5-phenyl-6H-pyrido[3,2,1-jk]carbazol-4-yl benzoate (OPPCB), crystallized in the monoclinic P21/c space group. For OPPCA and OPPCB, a weak interaction between carbonyl oxygen atom in the substituted group and carbon atom in the fused ring was responsible for three-dimensional arrangements. In addition, 6-oxo-5-phenyl-6H-pyrido[3,2,1-jk]carbazol-4-yl furan-2-carboxylate (OPPCF), and 6-oxo-5-phenyl-6H-pyrido[3,2,1-jk]carbazol-4-yl naphthoate (OPPCN) were also synthesized. HPPCO and the four derivatives excited by ultraviolet (UV) light produced blue emission. Proton substitution of the OH group significantly increased the radiative transitions and moderately decreased the non-radiative transitions. Consequently the luminescence quantum yields of the derivatives enhanced more than 4.6-fold, no matter what the groups were substituted. Structural and optical properties were further determined using density functional theory (DFT) and ZINDO calculations. The planar structure of the pyridocarbazole-fused ring resulted in π → π* electronic transitions within the main frame, with an additional transition from the n(O) of carbonyl to the π* of the main frame. The three excited states that arose from these transitions were responsible for the blue luminescence.

  7. Structural and photophysical properties of HPPCO (4-hydroxy-5-phenyl-6H-pyrido[3,2,1-jk]carbazol-6-one) derivatives.

    PubMed

    Jeong, Yong-Kwang; Kim, Min-Ah; Lee, Hyo-Sung; Kim, Jong-Moon; Lee, Sung Woo; Kang, Jun-Gill

    2015-01-05

    Proton-substitution effects of 4-hydroxy-5-phenyl-6H-pyrido[3,2,1-jk]carbazol-6-one (HPPCO) on structural and photophysical properties were presented. HPPCO crystallized in the orthorhombic space group Pbca with an intermolecular hydrogen bonding between OH and oxygen atom of the carbonyl. The proton-substituted derivatives, 6-oxo-5-phenyl-6H-pyrido[3,2,1-jk]carbazol-4-yl acetate (OPPCA) and 6-oxo-5-phenyl-6H-pyrido[3,2,1-jk]carbazol-4-yl benzoate (OPPCB), crystallized in the monoclinic P2₁/c space group. For OPPCA and OPPCB, a weak interaction between carbonyl oxygen atom in the substituted group and carbon atom in the fused ring was responsible for three-dimensional arrangements. In addition, 6-oxo-5-phenyl-6H-pyrido[3,2,1-jk]carbazol-4-yl furan-2-carboxylate (OPPCF), and 6-oxo-5-phenyl-6H-pyrido[3,2,1-jk]carbazol-4-yl naphthoate (OPPCN) were also synthesized. HPPCO and the four derivatives excited by ultraviolet (UV) light produced blue emission. Proton substitution of the OH group significantly increased the radiative transitions and moderately decreased the non-radiative transitions. Consequently the luminescence quantum yields of the derivatives enhanced more than 4.6-fold, no matter what the groups were substituted. Structural and optical properties were further determined using density functional theory (DFT) and ZINDO calculations. The planar structure of the pyridocarbazole-fused ring resulted in π→π(*) electronic transitions within the main frame, with an additional transition from the n(O) of carbonyl to the π(*) of the main frame. The three excited states that arose from these transitions were responsible for the blue luminescence.

  8. Electronic Spectroscopy of [FePAH](+) Complexes in the Region of the Diffuse Interstellar Bands: Multireference Wave Function Studies on [FeC6H6](+).

    PubMed

    Lanza, Mathieu; Simon, Aude; Ben Amor, Nadia

    2015-06-11

    The low-energy states and electronic spectrum in the near-infrared-visible region of [FeC6H6](+) are studied by theoretical approaches. An exhaustive exploration of the potential energy surface of [FeC6H6](+) is performed using the density functional theory method. The ground state is found to be a (4)A1 state. The structures of the lowest energy states ((4)A2 and (4)A1) are used to perform multireference wave function calculations by means of the multistate complete active space with perturbation at the second order method. Contrary to the density functional theory results ((4)A1 ground state), multireference perturbative calculations show that the (4)A2 state is the ground state. The vertical electronic spectrum is computed and compared with the astronomical diffuse interstellar bands, a set of near-infrared-visible bands detected on the extinction curve in our and other galaxies. Many transitions are found in this domain, corresponding to d → d, d → 4s, or d → π* excitations, but few are allowed and, if they are, their oscillation strengths are small. Even though some band positions could match some of the observed bands, the relative intensities do not fit, making the contribution of the [Fe-C6H6](+) complexes to the diffuse interstellar bands questionable. This work, however, lays the foundation for the studies of polycyclic aromatic hydrocarbons (PAHs) complexed to Fe cations that are more likely to possess d → π* and π → π* transitions in the diffuse interstellar bands domain. PAH ligands indeed possess a larger number of π and π* orbitals, respectively, higher and lower in energy than those of C6H6, which are expected to lead to lower energy d → π* and π → π* transitions in [FePAH](+) than in [FeC6H6](+) complexes.

  9. Matrix-grain-bridging contributions to the toughness of SiC composites with alumina-coated SiC platelets

    SciTech Connect

    Cao, J.J.; He, Y.; MoberlyChan, W.J.; De Jonghe, L.C. |

    1996-05-01

    Silicon carbide composites were fabricated through the incorporation of alumina-coated SiC platelets into a SiC matrix. Mechanical properties were evaluated in direct comparison with a commercial Hexoloy SiC. The fracture toughness of the composite, with a fine grained {beta}-SiC matrix, was twice that of the commercial material. The alumina-coating on the platelets provided a weak interface to promote crack deflection and platelet bridging, as well as easing densification of the composites. On the other hand, a three-fold increase in fracture toughness (9.1 MPa {radical}m) of an in situ toughened monolithic SiC was achieved by processing at higher temperatures, promoting the {beta}-to-{alpha} phase transformation and forming a microstructure containing high-aspect-ration plate-shaped grains. Efforts were made to combine the effects of coated-platelets reinforcement and in situ toughening in the matrix. Moderate high toughness (8 MPa {radical}m) was achieved by coupled toughening. The contribution of matrix-grain-bridging, however, was limited by the processing temperature at which the oxide coating was stable.

  10. Diffusion of Ag, Au and Cs implants in MAX phase Ti3SiC2

    SciTech Connect

    Jiang, Weilin; Henager, Charles H.; Varga, Tamas; Jung, Hee Joon; Overman, Nicole R.; Zhang, Chonghong; Gou, Jie

    2015-05-16

    MAX phases (M: early transition metal; A: elements in group 13 or 14; X: C or N), such as titanium silicon carbide (Ti3SiC2), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti3SiC2 has been considered as a possible fuel cladding material. This study reports on the diffusivities of fission product surrogates (Ag and Cs) and a noble metal Au (with diffusion behavior similar to Ag) in this ternary compound at elevated temperatures, as well as in dual-phase nanocomposite of Ti3SiC2/3C-SiC and polycrystalline CVD 3C-SiC for behavior comparisons. Samples were implanted with Ag, Au or Cs ions and characterized with various methods, including x-ray diffraction, electron backscatter diffraction, energy dispersive x-ray spectroscopy, Rutherford backscattering spectrometry, helium ion microscopy, and transmission electron microscopy. The results show that in contrast to immobile Ag in 3C-SiC, there is a significant outward diffusion of Ag in Ti3SiC2 within the dual-phase nanocomposite during Ag ion implantation at 873 K. Similar behavior of Au in polycrystalline Ti3SiC2 was also observed. Cs out-diffusion and release from Ti3SiC2 occurred during post-implantation thermal annealing at 973 K. This study suggests caution and further studies in consideration of Ti3SiC2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures.

  11. SiC JFET Transistor Circuit Model for Extreme Temperature Range

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.

    2008-01-01

    A technique for simulating extreme-temperature operation of integrated circuits that incorporate silicon carbide (SiC) junction field-effect transistors (JFETs) has been developed. The technique involves modification of NGSPICE, which is an open-source version of the popular Simulation Program with Integrated Circuit Emphasis (SPICE) general-purpose analog-integrated-circuit-simulating software. NGSPICE in its unmodified form is used for simulating and designing circuits made from silicon-based transistors that operate at or near room temperature. Two rapid modifications of NGSPICE source code enable SiC JFETs to be simulated to 500 C using the well-known Level 1 model for silicon metal oxide semiconductor field-effect transistors (MOSFETs). First, the default value of the MOSFET surface potential must be changed. In the unmodified source code, this parameter has a value of 0.6, which corresponds to slightly more than half the bandgap of silicon. In NGSPICE modified to simulate SiC JFETs, this parameter is changed to a value of 1.6, corresponding to slightly more than half the bandgap of SiC. The second modification consists of changing the temperature dependence of MOSFET transconductance and saturation parameters. The unmodified NGSPICE source code implements a T(sup -1.5) temperature dependence for these parameters. In order to mimic the temperature behavior of experimental SiC JFETs, a T(sup -1.3) temperature dependence must be implemented in the NGSPICE source code. Following these two simple modifications, the Level 1 MOSFET model of the NGSPICE circuit simulation program reasonably approximates the measured high-temperature behavior of experimental SiC JFETs properly operated with zero or reverse bias applied to the gate terminal. Modification of additional silicon parameters in the NGSPICE source code was not necessary to model experimental SiC JFET current-voltage performance across the entire temperature range from 25 to 500 C.

  12. Effect of SiC particles on microarc oxidation process of magnesium matrix composites

    NASA Astrophysics Data System (ADS)

    Wang, Y. Q.; Wang, X. J.; Gong, W. X.; Wu, K.; Wang, F. H.

    2013-10-01

    SiC particles are an important reinforced phase in metal matrix composites. Their effect on the microarc oxidation (MAO, also named plasma electrolytic oxidation-PEO) process of SiCp/AZ91 Mg matrix composites (MMCs) was studied and the mechanism was revealed. The corrosion resistance of MAO coating was also investigated. Voltage-time curves during MAO were recorded to study the barrier film status on the composites. Scanning electron microscopy was used to characterize the existing state of SiC particles in MAO. Energy dispersive X-ray spectrometry and X-ray photoelectron spectroscopy were used to analyze the chemical composition of the coating. Corrosion resistance of the bare and coated composites was evaluated by potentiodynamic polarization curves in 3.5% NaCl solution. Results showed that the integrality and electrical insulation properties of the barrier film on the composites were destroyed by the SiC particles. Consequently, the sparking discharge at the early stage of MAO was inhibited, and the growth efficiency of the MAO coating decreased with the increase in the volume fraction of SiC particles. SiC particles did not exist stably during MAO; they were oxidized or partially oxidized into SiO2 before the overall sparking discharge. The transformation from semi-conductive SiC to insulating SiO2 by oxidation restrained the current leakage at the original SiC positions and then promoted sparking discharge and coating growth. The corrosion current density of SiCp/AZ91 MMCs was reduced by two orders of magnitude after MAO treatment. However, the corrosion resistances of the coated composites were lower than that of the coated alloy.

  13. The benefits and current progress of SiC SGTOs for pulsed power applications

    NASA Astrophysics Data System (ADS)

    Ogunniyi, Aderinto; O'Brien, Heather; Lelis, Aivars; Scozzie, Charles; Shaheen, William; Agarwal, Anant; Zhang, Jon; Callanan, Robert; Temple, Victor

    2010-10-01

    Silicon Carbide (SiC) is an extremely attractive material for semiconductor power devices because of its electrical and physical characteristics. This paper describes the benefits of utilizing SiC Super Gate Turn-Off thyristors (SGTO) in pulsed power applications, reviews the current progress and development of SiC GTOs, and presents the static and pulsed characteristics of large area GTOs with high blocking capabilities. The wide pulsed evaluation of the 0.5 cm 2 SiC SGTOs has been demonstrated and reported by the Army Research Laboratory (ARL). This paper presents the wide pulsed capabilities of the 1 cm 2 SiC SGTOs. The 1 cm 2 SiC SGTO devices handled up to twice the peak current of the 0.5 cm 2 SiC SGTOs at a 1 ms pulse width. The wide pulsed evaluation of these devices was demonstrated at ARL. ARL evaluated the static and pulsed characteristics of six of these devices. The devices had a forward blocking voltage rating of 9 kV and a trigger requirement of a negative pulse of 1 A to the gate for a millisecond pulse width. These devices were pulsed as high as 3.5 kA at 1 ms, equating to an action rate of 6 × 10 3 A 2 s and a current density of 4.8 kA/cm 2, based on the device active area. The narrow pulsed evaluation of this device has been demonstrated by Cree Inc. A peak current of 12.8 kA with a pulse width of 17 μs (corresponding to 12.8 kA/cm 2 based on the chip size) was conducted with this device.

  14. Wear Behaviour of Al-6061/SiC Metal Matrix Composites

    NASA Astrophysics Data System (ADS)

    Mishra, Ashok Kumar; Srivastava, Rajesh Kumar

    2016-06-01

    Aluminium Al-6061 base composites, reinforced with SiC particles having mesh size of 150 and 600, which is fabricated by stir casting method and their wear resistance and coefficient of friction has been investigated in the present study as a function of applied load and weight fraction of SiC varying from 5, 10, 15, 20, 25, 30, 35 and 40 %. The dry sliding wear properties of composites were investigated by using Pin-on-disk testing machine at sliding velocity of 2 m/s and sliding distance of 2000 m over a various loads of 10, 20 and 30 N. The result shows that the reinforcement of the metal matrix with SiC particulates up to weight percentage of 35 % reduces the wear rate. The result also show that the wear of the test specimens increases with the increasing load and sliding distance. The coefficient of friction slightly decreases with increasing weight percentage of reinforcements. The wear surfaces are examined by optical microscopy which shows that the large grooved regions and cavities with ceramic particles are found on the worn surface of the composite alloy. This indicates an abrasive wear mechanism, which is essentially a result of hard ceramic particles exposed on the worn surfaces. Further, it was found from the experimentation that the wear rate decreases linearly with increasing weight fraction of SiC and average coefficient of friction decreases linearly with increasing applied load, weight fraction of SiC and mesh size of SiC. The best result has been obtained at 35 % weight fraction and 600 mesh size of SiC.

  15. Experimental Investigation of Mechanical and Thermal properties of sisal fibre reinforced composite and effect of sic filler material

    NASA Astrophysics Data System (ADS)

    Surya Teja, Malla; Ramana, M. V.; Sriramulu, D.; Rao, C. J.

    2016-09-01

    With a view of exploring the potential use of natural recourses, we made an attempt to fabricate sisal fibre polymer composites by hand lay-up method. Natural fiber composites are renewable, cheap and biodegradable. Their easy availability, lower density, higher specific properties, lower cost, satisfactory mechanical and thermal properties, non-corrosive nature, makes them an attractive ecological alternative to glass, carbon or other man-made synthetic fibers. In this work, the effect of SiC on mechanical and thermal properties of natural sisal fiber composites are investigated. The composite has been made with and without SiC incorporating natural sisal fiber with polyester as bonding material. The experimental outcomes exhibited that the tensile strength of composite with 10%SiC 2.53 times greater than that of composite without SiC. The impact strength of composite with 10% SiC is 1.73 times greater than that of composite without SiC plain polyester. Thermal properties studied include thermal conductivity, specific heat capacity, thermal diffusivity, thermal degradation and stability. Three different samples with 0%, 5%, 10% SiC powder are considered. With the addition of SiC filler powder, thermal conductivity increases, specific heat capacity gradually increases then decreases, thermal diffusivity increases and thermal stability improves with Sic powder.

  16. Processing and Properties of SiC/MoSi2-SiC Composites Fabricated by Melt Infiltration

    NASA Technical Reports Server (NTRS)

    Bhatt, Ramakrishna T.; Hebsur, Mohan G.

    2000-01-01

    Hi-Nicalon SiC fiber reinforced MoSi2-SiC matrix composites (SiC/MoSi2-SiC) have been fabricated by the melt infiltration approach. The composite consists of approximately 60 vol%, 2-D woven BN/SiC coated Hi-Nicalon SiC fibers and approximately 40 vol% MoSi2-SiC matrix. The room temperature tensile properties and thermal conductivity of the SiC/MoSi2-SiC composites were measured and compared with those of the melt infiltrated SiC/SiC composites. The influence oi fiber architecture on tensile properties was also evaluated. Results indicate that the primary modulus, stress corresponding to deviation from linearity, and transverse thermal conductivity values for the SiC/MoSi2-SiC composites are significantly lower than those for the SiC/SiC composites. Microcracking of the matrix due to the large difference in thermal expansion between MoSi2 and SiC appears to be the reason for the lower matrix dominated properties of SiC/MoSi2-SiC composites.

  17. Fabrication of protective-coated SiC reinforced tungsten matrix composites with reduced reaction phases by spark plasma sintering

    NASA Astrophysics Data System (ADS)

    Umer, Malik Adeel; Lee, Dongju; Waseem, Owais Ahmed; Ryu, Ho Jin; Hong, Soon Hyung

    2016-05-01

    SiC reinforced tungsten matrix composites were fabricated via the spark plasma sintering process. In order to prevent an interfacial reaction between the SiC and tungsten during sintering, TiOx coated SiC particles were synthesized by a solution-based process. TiOx layer coated SiC particles were treated in high temperature nitriding conditions or annealed in a high temperature vacuum to form TiN or TiC coated SiC particles, respectively. The TiC layers coated on SiC particles successfully prevented tungsten from reacting with SiC; hence the proposed process resulted in successful fabrication of the SiC/W composites. The mechanical properties such as compressive strength and flexural strength of the composites were measured. Additionally, the effect of SiC on the high temperature oxidative ablation of tungsten was also investigated. The addition of SiC resulted in an improved oxidative ablation resistance of the tungsten-based composites.

  18. Oxidation of SiC Fiber-Reinforced SiC Matrix Composites with a BN Interphase

    NASA Technical Reports Server (NTRS)

    Opila, Elizabeth; Boyd, Meredith K.

    2010-01-01

    SiC-fiber reinforced SiC matrix composites with a BN interphase were oxidized in reduced oxygen partial pressures of oxygen to simulate the environment for hypersonic vehicle leading edge applications. The constituent fibers as well as composite coupons were oxidized in oxygen partial pressures ranging from 1000 ppm O2 to 5% O2 balance argon. Exposure temperatures ranged from 816 C to 1353 C (1500 F to 2450 F). The oxidation kinetics of the coated fibers were monitored by thermogravimetric analysis (TGA). An initial rapid transient weight gain was observed followed by parabolic kinetics. Possible mechanisms for the transient oxidation are discussed. One edge of the composite coupon seal coat was ground off to simulate damage to the composite which allowed oxygen ingress to the interior of the composite. Oxidation kinetics of the coupons were characterized by scanning electron microscopy since the weight changes were minimal. It was found that sealing of the coupon edge by silica formation occurred. Differences in the amount and morphology of the sealing silica as a function of time, temperature and oxygen partial pressure are discussed. Implications for use of these materials for hypersonic vehicle leading edge materials are summarized.

  19. High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications

    SciTech Connect

    Whitaker, Mr. Bret; Cole, Mr. Zach; Passmore, Mr. Brandon; Martin, Daniel; Mcnutt, Tyler; Lostetter, Dr. Alex; Ericson, Milton Nance; Frank, Steven Shane; Britton Jr, Charles L; Marlino, Laura D; Mantooth, Alan; Francis, Dr. Matt; Lamichhane, Ranjan; Shepherd, Dr. Paul; Glover, Dr. Michael

    2014-01-01

    This paper presents the testing results of an all-silicon carbide (SiC) intelligent power module (IPM) for use in future high-density power electronics applications. The IPM has high-temperature capability and contains both SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter to showcase the performance of the module in a system level application. The converter was initially operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The efficiency of the converter was then evaluated experimentally and optimized by increasing the overdrive voltage on the SiC gate driver ICs. Overall a peak efficiency of 97.7% was measured at 3.0 kW output. The converter s switching frequency was then increased to 500 kHz to prove the high frequency capability of the power module was then pushed to its limits and operated at a switching frequency of 500 kHz. With no further optimization of components, the converter was able to operate under these conditions and showed a peak efficiency of 95.0% at an output power of 2.1 kW.

  20. C/sic Life Prediction for Propulsion Applications

    NASA Technical Reports Server (NTRS)

    Levine, Stanley R.; Verrilli, Michael J.; Opila, Elizabeth J.; Halbig, Michael C.; Calomino, Anthony M.; Thomas, David J.

    2002-01-01

    Accurate life prediction is critical to successful use of ceramic matrix composites (CMC). The tools to accomplish this are immature and not oriented toward the behavior of carbon fiber reinforced silicon carbide (C/SiC), the primary system of interest for many reusable and single mission launch vehicle propulsion and airframe applications. This paper describes an approach and process made to satisfy the need to develop an integrated life prediction system that addresses mechanical durability and environmental degradation of C/SiC. Issues such as oxidation, steam and hydrogen effects on material behavior are discussed. Preliminary tests indicate that steam will aggressively remove SiC seal coat and matrix in line with past experience. The kinetics of water vapor reaction with carbon fibers is negligible at 600 C, but comparable to air attack at 1200 C. The mitigating effect of steam observed in fiber oxidation studies has also been observed in stress rupture tests. Detailed microscopy of oxidized specimens is being carried out to develop the oxidation model. Carbon oxidation kinetics are reaction controlled at intermediate temperatures and diffusion controlled at high temperatures (approximately 1000 C). Activation energies for T-300 and interface pyrolytic carbon were determined as key inputs to the oxidation model. Crack opening as a function of temperature and stress was calculated. Mechanical property tests to develop and verify the probabilistic life model are very encouraging except for residual strength prediction. Gage width is a key variable governing edge oxidation of seal coated specimens. Future efforts will include architectural effects, enhanced coatings, biaxial tests, and LCF. Modeling will need to account for combined effects.

  1. C/SIC Life Prediction for Propulsion Applications

    NASA Technical Reports Server (NTRS)

    Levine, Stanley R.; Verrilli, Michael J.; Opula, Elizabeth J.; Halbig, Michael C.; Calomino, Anthony M.; Thomas, David J.

    2002-01-01

    Accurate life prediction is critical to successful use of ceramic matrix composites (CMC). The tools to accomplish this are immature and not oriented toward the behavior of carbon fiber reinforced silicon carbide (C/SiC), the primary system of interest for many reusable and single mission launch vehicle propulsion and airframe applications. This paper describes an approach and progress made to satisfy the need to develop an integrated life prediction system that addresses mechanical durability and environmental degradation of C/SiC. Issues such as oxidation, steam and hydrogen effects on material behavior are discussed. Preliminary tests indicate that stream will aggressively remove SiC seal coat and matrix in line with past experience. The kinetics of water vapor reaction with carbon fibers is negligible at 600 C, but comparable to air attack at 1200 C. The mitigating effect of steam observed in fiber oxidation studies has also been observed in stress rupture tests. Detailed microscopy of oxidized specimens is being carried out to develop the oxidation model. Carbon oxidation kinetics are reaction controlled at intermediate temperatures and diffusion controlled at high temperatures (approx. 1000 C). Activation energies for T-300 and interface pyrolytic carbon were determined as key inputs to the oxidation model. Crack opening as a function of temperature and stress was calculated. Mechanical property tests to develop and verify the probabilistic life model are very encouraging except for residual strength prediction. Gage width is a key variable governing edge oxidation of seal coated specimens. Future efforts will include architectural effects, enhanced coatings, biaxial tests, and LCF. Modeling will need to account for combined effects.

  2. A new approach for fabrications of SiC based photodetectors.

    PubMed

    Aldalbahi, Ali; Li, Eric; Rivera, Manuel; Velazquez, Rafael; Altalhi, Tariq; Peng, Xiaoyan; Feng, Peter X

    2016-03-18

    We report on a new approach to quickly synthesize high-quality single crystalline wide band gap silicon carbide (SiC) films for development of high-performance deep ultraviolet (UV) photodetectors. The fabricated SiC based UV photodetectors exhibited high response while maintaining cost-effectiveness and size miniaturization. Focus of the experiments was on studies of electrical and electronic properties, as well as responsivity, response and recovery times, and repeatability of the deep UV photodetectors. Raman scattering spectroscopy and scanning electron microscope (SEM) were used to characterize the SiC materials. Analyses of the SEM data indicated that highly flat SiC thin films have been obtained. Based on the synthesized SiC, deep UV detectors are designed, fabricated, and tested with various UV wavelength lights at different radiation intensities. Temperature effect and bias effect on the photocurrent strength and signal-to-noise ratio, humidity effect on the response time and recovery time of the fabricated detectors have been carefully characterized and discussed. The detectors appear to have a very stable baseline and repeatability. The obtained responsivity is more than 40% higher compared to commercial detectors. The good performance of the photodetectors at operating temperature up to 300 °C remains nearly unchanged.

  3. Ag Transport Through Non-Irradiated and Irradiated SiC

    SciTech Connect

    Szlufarska, Izabela; Morgan, Dane; Blanchard, James

    2016-01-11

    Silicon carbide is the main barrier to diffusion of fission products in the current design of TRistuctural ISOtropic (TRISO) coated fuel particles, and Ag is one of the few fission products that have been shown to escape through this barrier. Because the SiC coating in TRISO is exposed to radiation throughout the lifetime of the fuel, understanding of how radiation changes the transport of the fission products is essential for the safety of the reactor. The goals of this project are: (i) to determine whether observed variation in integral release measurements of Ag through SiC can be explained by differences in grain size and grain boundary (GB) types among the samples; (2) to identify the effects of irradiation on diffusion of Ag through SiC; (3) to discover phenomena responsible for significant solubility of Ag in polycrystalline SiC. To address these goals, we combined experimental analysis of SiC diffusion couples with modeling studies of diffusion mechanisms through bulk and GBs of this material. Comparison between results obtained for pristine and irradiated samples brings in insights into the effects of radiation on Ag transport.

  4. Molecular systems biology of Sic1 in yeast cell cycle regulation through multiscale modeling.

    PubMed

    Barberis, Matteo

    2012-01-01

    Cell cycle control is highly regulated to guarantee the precise timing of events essential for cell growth, i.e., DNA replication onset and cell division. Failure of this control plays a role in cancer and molecules called cyclin-dependent kinase (Cdk) inhibitors (Ckis) exploit a critical function in cell cycle timing. Here we present a multiscale modeling where experimental and computational studies have been employed to investigate structure, function and temporal dynamics of the Cki Sic1 that regulates cell cycle progression in Saccharomyces cerevisiae. Structural analyses reveal molecular details of the interaction between Sic1 and Cdk/cyclin complexes, and biochemical investigation reveals Sic1 function in analogy to its human counterpart p27(Kip1), whose deregulation leads to failure in timing of kinase activation and, therefore, to cancer. Following these findings, a bottom-up systems biology approach has been developed to characterize modular networks addressing Sic1 regulatory function. Through complementary experimentation and modeling, we suggest a mechanism that underlies Sic1 function in controlling temporal waves of cyclins to ensure correct timing of the phase-specific Cdk activities.

  5. A new approach for fabrications of SiC based photodetectors

    PubMed Central

    Aldalbahi, Ali; Li, Eric; Rivera, Manuel; Velazquez, Rafael; Altalhi, Tariq; Peng, Xiaoyan; Feng, Peter X.

    2016-01-01

    We report on a new approach to quickly synthesize high-quality single crystalline wide band gap silicon carbide (SiC) films for development of high-performance deep ultraviolet (UV) photodetectors. The fabricated SiC based UV photodetectors exhibited high response while maintaining cost-effectiveness and size miniaturization. Focus of the experiments was on studies of electrical and electronic properties, as well as responsivity, response and recovery times, and repeatability of the deep UV photodetectors. Raman scattering spectroscopy and scanning electron microscope (SEM) were used to characterize the SiC materials. Analyses of the SEM data indicated that highly flat SiC thin films have been obtained. Based on the synthesized SiC, deep UV detectors are designed, fabricated, and tested with various UV wavelength lights at different radiation intensities. Temperature effect and bias effect on the photocurrent strength and signal-to-noise ratio, humidity effect on the response time and recovery time of the fabricated detectors have been carefully characterized and discussed. The detectors appear to have a very stable baseline and repeatability. The obtained responsivity is more than 40% higher compared to commercial detectors. The good performance of the photodetectors at operating temperature up to 300 °C remains nearly unchanged. PMID:26988399

  6. Creep deformation of grain boundary in a highly crystalline SiC fibre.

    PubMed

    Shibayama, Tamaki; Yoshida, Yutaka; Yano, Yasuhide; Takahashi, Heishichiro

    2003-01-01

    Silicon carbide (SiC) matrix composites reinforced by SiC fibres (SiC/SiC composites) are currently being considered as alternative materials in high Ni alloys for high-temperature applications, such as aerospace components, gas-turbine energy-conversion systems and nuclear fusion reactors, because of their high specific strength and fracture toughness at elevated temperatures compared with monolithic SiC ceramics. It is important to evaluate the creep properties of SiC fibres under tensile loading in order to determine their usefulness as structural components. However, it would be hard to evaluate creep properties by monoaxial tensile properties when we have little knowledge on the microstructure of crept specimens, especially at the grain boundary. Recently, a simple fibre bend stress relaxation (BSR) test was introduced by Morscher and DiCarlo to address this problem. Interpretation of the fracture mechanism at the grain boundary is also essential to allow improvement of the mechanical properties. In this paper, effects of stress applied by BSR test on microstructural evolution in advanced SiC fibres, such as Tyranno-SA including small amounts of Al, are described and discussed along with the results of microstructure analysis on an atomic scale by using advanced microscopy.

  7. Surface characteristics and corrosion behaviour of WE43 magnesium alloy coated by SiC film

    NASA Astrophysics Data System (ADS)

    Li, M.; Cheng, Y.; Zheng, Y. F.; Zhang, X.; Xi, T. F.; Wei, S. C.

    2012-01-01

    Amorphous SiC film has been successfully fabricated on the surface of WE43 magnesium alloy by plasma enhanced chemical vapour deposition (PECVD) technique. The microstructure and elemental composition were analyzed by transmission electron microscopy (TEM), glancing angle X-ray diffraction (GAXRD) and X-ray photoelectron spectroscopy (XPS), respectively. The immersion test indicated that SiC film could efficiently slow down the degradation rate of WE43 alloy in simulated body fluid (SBF) at 37 ± 1 °C. The indirect toxicity experiment was conducted using L929 cell line and the results showed that the extraction medium of SiC coated WE43 alloys exhibited no inhibitory effect on L929 cell growth. The in vitro hemocompatibility of the samples was investigated by hemolysis test and blood platelets adhesion test, and it was found that the hemolysis rate of the coated WE43 alloy decreased greatly, and the platelets attached on the SiC film were slightly activated with a round shape. It could be concluded that SiC film prepared by PECVD made WE43 alloy more appropriate to biomedical application.

  8. Silicon Carbide (SiC) MOSFET-based Full-Bridge for Fusion Science Applications

    NASA Astrophysics Data System (ADS)

    Ziemba, Timothy; Miller, Kenneth; Prager, James; Picard, Julian; Hashim, Akel

    2014-10-01

    Switching power amplifiers (SPAs) have a wide variety of applications within the fusion science community, including feedback and control systems for dynamic plasma stabilization in tokamaks, inductive and arc plasma sources, Radio Frequency (RF) helicity and flux injection, RF plasma heating and current drive schemes, ion beam generation, and RF pre-ionizer systems. SiC MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. Eagle Harbor Technologies (EHT) is designing, constructing, and testing a SiC MOSFET-based full-bridge SPA. EHT will leverage the proprietary gate drive technology previously developed with the support of a DOE SBIR, which will enable fast, efficient switching in a small form factor. The primary goal is to develop a SiC MOSFET-based SPA for fusion science applications. Work supported in part by the DOE under Contract Number DE-SC0011907.

  9. The effect of MgO(111) interlayer on the interface phase stability and structure of BaFe{sub 12}O{sub 19}/SiC(0001)

    SciTech Connect

    Lazarov, V. K.; Hasnip, P. J.; Cai, Z.; Ziemer, K. S.; Yoshida, K.

    2012-04-01

    We present a study on the effect of an interlayer of thin MgO(111) film on SiC(0001) on the interface phase stability and structure of the BaFe{sub 12}O{sub 19} (BaM). The 10 nm MgO(111) interlayer followed by the BaM film were grown by molecular beam epitaxy on 6H-SiC. Cross-sectional transmission electron microscopy shows the formation of a magnesium ferrite spinel phase at the interface, and after 25 nm, a well structured BaM film was observed. In addition to the two main phases (Mg-ferrite and BaM), a thin layer of SiOx (2-3 nm) is formed at the SiC interface. In spite of the formation of this amorphous layer, the diffraction studies show that the BaM film is epitaxially grown and it has a single crystal structure. The energy dispersive x-ray analysis from the interface region shows that the MgO layer prevents significant outdiffusion of the Si into the film. Total energy calculations by density functional theory were used to investigate the stability of the various phases and to explain the observed interfacial phases in the studied system.

  10. Characterization of molecular beam epitaxy grown β-Nb2N films and AlN/β-Nb2N heterojunctions on 6H-SiC substrates

    NASA Astrophysics Data System (ADS)

    Nepal, Neeraj; Katzer, D. Scott; Meyer, David J.; Downey, Brian P.; Wheeler, Virginia D.; Storm, David F.; Hardy, Matthew T.

    2016-02-01

    β-Nb2N films and AlN/β-Nb2N heterojunctions were grown by molecular beam epitaxy (MBE) on 6H-SiC. The epitaxial nature and β-Nb2N phase were determined by symmetric and asymmetric high-resolution X-ray diffraction (HRXRD) measurements, and were confirmed by grazing incidence diffraction measurements using synchrotron photons. Measured lattice parameters and the in-plane stress of β-Nb2N on 6H-SiC were c = 5.0194 Å, a = 3.0558 Å, and 0.2 GPa, respectively. The HRXRD, transmission electron microscopy, and Raman spectroscopy revealing epitaxial growth of AlN/β-Nb2N heterojunctions have identical orientations with the substrate, abrupt interfaces, and bi-axial stress of 0.88 GPa, respectively. The current finding opens up possibilities for the next generation of high-power devices that cannot be fabricated at present.

  11. Characterization of 6H-SiC JFET Integrated Circuits Over A Broad Temperature Range from -150 C to +500 C

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Krasowski, Michael J.; Chen, Liang-Yu; Prokop, Norman F.

    2009-01-01

    The NASA Glenn Research Center has previously reported prolonged stable operation of simple prototype 6H-SiC JFET integrated circuits (logic gates and amplifier stages) for thousands of hours at +500 C. This paper experimentally investigates the ability of these 6H-SiC JFET devices and integrated circuits to also function at cold temperatures expected to arise in some envisioned applications. Prototype logic gate ICs experimentally demonstrated good functionality down to -125 C without changing circuit input voltages. Cascaded operation of gates at cold temperatures was verified by externally wiring gates together to form a 3-stage ring oscillator. While logic gate output voltages exhibited little change across the broad temperature range from -125 C to +500 C, the change in operating frequency and power consumption of these non-optimized logic gates as a function of temperature was much larger and tracked JFET channel conduction properties.

  12. [V16Sb4O42(H2O){VO(C6H14N2)2}4]: a terminal expansion to a polyoxovanadate archetype.

    PubMed

    Wutkowski, Adam; Näther, Christian; Kögerler, Paul; Bensch, Wolfgang

    2008-03-17

    The charge-neutral antimonatopolyoxovanadium(IV) cluster [V(IV)16Sb(III)4O42(H2O){V(IV)O(C6H14N2)2}4].10H2O.C6H14N2 was obtained under solvothermal conditions. The central cluster fragment, [V(IV) 16Sb(III)4O42], is a derivative of the [V18O42] archetype and is formed by replacing two VO5 polyhedra by two Sb2O5 units. The {V20Sb4} structure expands the {V16Sb4} motif by the addition of four square-pyramidal, terminal VO(1,2-diaminocyclohexane)2 groups. At low temperatures, the magnetic ground state is characterized by four independent S = 1/2 sites.

  13. The Wannier-Stark effects in the 6H-SiC planar junction field-effect transistors with a p-n junction as the gate

    SciTech Connect

    Sankin, V. I. Shkrebii, P. P.; Lebedev, A. A.

    2006-10-15

    Dependence of the short-circuit photocurrent on the voltage V{sub g} applied to the gate of the 6H-SiC planar field-effect transistor is studied. The negative differential photoconductivity appeared at a certain value of V{sub g}; the parameters of this photoconductivity corresponded to those of the Wannier-Stark ladders in the natural 6H-SiC super lattice. At the same value of V{sub g}, a fairly abrupt decrease to zero of the source-drain current I{sub sd} is observed, which is indicative of cutoff at the voltage that is much lower than the expected cutoff voltage for this structure. The effect is attributed to a decrease in mobility in the mode of the Wannier-Stark ladders, a decrease in the rate of ionization of the donor atoms, and a reduction in the screening of the field.

  14. Nonplanar structure of C6H5SCF3 facilitates πσ∗-mediated photodissociation reaction on the S1 state

    NASA Astrophysics Data System (ADS)

    Kim, So-Yeon; Lee, Jeongmook; Kim, Sang Kyu; Choi, Young S.

    2016-08-01

    Vibrational structure of trifluoromethylthiobenzene (C6H5SCF3) on the S1 state has been investigated by resonance-enhanced two-photon ionization spectroscopy and nature of predissociation dynamics is inferred from homogeneously broadened spectral features. As C6H5SCF3 adopts a nonplanar structure in both the S0 and S1 states, the effective adiabatic barrier generated by avoided crossing of optically-bright bound S1 (ππ∗) and dark-repulsive S2 (πσ∗) surfaces along the reaction coordinate is significantly lowered, giving the S1 lifetime of ∼300 fs. This experiment demonstrates that the molecular structure spanned by the reactive flux near the curve-crossing region dictates reaction rate as well as nonadiabatic transition probability.

  15. Complex Function for SicA, a Salmonella enterica Serovar Typhimurium Type III Secretion-Associated Chaperone

    PubMed Central

    Tucker, Stephanie C.; Galán, Jorge E.

    2000-01-01

    Salmonella enterica encodes a type III secretion system within a pathogenicity island located at centisome 63 that is essential for virulence. All type III secretion systems require the function of a family of low-molecular-weight proteins that aid the secretion process by acting as partitioning factors and/or secretion pilots. One such protein is SicA, which is encoded immediately upstream of the type III secreted proteins SipB and SipC. We found that the absence of SicA results in the degradation of both SipB and SipC. Interestingly, in the absence of SipC, SipB was not only stable but also secreted at wild-type levels in a sicA mutant background, indicating that SicA is not required for SipB secretion. We also found that SicA is capable of binding both SipB and SipC. These results are consistent with a SicA role as a partitioning factor for SipB and SipC, thereby preventing their premature association and degradation. We also found that introduction of a sicA null mutation results in the lack of expression of SopE, another type III-secreted protein. Such an effect was shown to be transcriptional. Introduction of a loss-of-function sipC mutation into the sicA mutant background rescued sopE expression. These results indicate that the effect of sicA on sopE expression is indirect and most likely exerted through a regulatory factor(s) partitioned by SicA from SipC. These studies therefore describe a surprisingly complex function for the Salmonella enterica type III secretion-associated chaperone SicA. PMID:10735870

  16. Draft Genome Sequence of Pseudomonas azotifigens Strain DSM 17556T (6H33bT), a Nitrogen Fixer Strain Isolated from a Compost Pile.

    PubMed

    Busquets, Antonio; Peña, Arantxa; Gomila, Margarita; Mulet, Magdalena; Mayol, Joan; García-Valdés, Elena; Bennasar, Antonio; Huntemann, Marcel; Han, James; Chen, I-Min; Mavromatis, Konstantinos; Markowitz, Victor; Palaniappan, Krishnaveni; Ivanova, Natalia; Schaumberg, Andrew; Pati, Amrita; Reddy, T B K; Nordberg, Henrik; Woyke, Tanja; Klenk, Hans-Peter; Kyrpides, Nikos; Lalucat, Jorge

    2013-10-31

    Pseudomonas azotifigens strain 6H33b(T) is a nitrogen fixer isolated from a hyperthermal compost pile in 2005 by Hatayama and collaborators. Here we report the draft genome, which has an estimated size of 5.0 Mb, exhibits an average G+C content of 66.73%, and is predicted to encode 4,536 protein-coding genes and 100 RNA genes.

  17. Draft Genome Sequence of Pseudomonas azotifigens Strain DSM 17556T (6H33bT), a Nitrogen Fixer Strain Isolated from a Compost Pile

    PubMed Central

    Busquets, Antonio; Peña, Arantxa; Gomila, Margarita; Mulet, Magdalena; Mayol, Joan; García-Valdés, Elena; Bennasar, Antonio; Huntemann, Marcel; Han, James; Chen, I-Min; Mavromatis, Konstantinos; Markowitz, Victor; Palaniappan, Krishnaveni; Ivanova, Natalia; Schaumberg, Andrew; Pati, Amrita; Reddy, T. B. K.; Nordberg, Henrik; Woyke, Tanja; Klenk, Hans-Peter; Kyrpides, Nikos

    2013-01-01

    Pseudomonas azotifigens strain 6H33bT is a nitrogen fixer isolated from a hyperthermal compost pile in 2005 by Hatayama and collaborators. Here we report the draft genome, which has an estimated size of 5.0 Mb, exhibits an average G+C content of 66.73%, and is predicted to encode 4,536 protein-coding genes and 100 RNA genes. PMID:24179119

  18. Vapor-Liquid Equilibrium in the Mixture Trichloromethane CHCl3 + C6H10O Cyclohexanone (EVLM1111, LB5654_E)

    NASA Astrophysics Data System (ADS)

    Cibulka, I.; Fontaine, J.-C.; Sosnkowska-Kehiaian, K.; Kehiaian, H. V.

    This document is part of Subvolume A 'Binary Liquid Systems of Nonelectrolytes I' of Volume 26 'Heats of Mixing, Vapor-Liquid Equilibrium, and Volumetric Properties of Mixtures and Solutions' of Landolt-Börnstein Group IV 'Physical Chemistry'. It contains the Chapter 'Vapor-Liquid Equilibrium in the Mixture Trichloromethane CHCl3 + C6H10O Cyclohexanone (EVLM1111, LB5654_E)' providing data from direct measurement of pressure at variable mole fraction in liquid phase and constant temperature.

  19. Distinct lymphocyte antigens 6 (Ly6) family members Ly6D, Ly6E, Ly6K and Ly6H drive tumorigenesis and clinical outcome

    PubMed Central

    Luo, Linlin; McGarvey, Peter; Madhavan, Subha; Kumar, Rakesh; Gusev, Yuriy; Upadhyay, Geeta

    2016-01-01

    Stem cell antigen-1 (Sca-1) is used to isolate and characterize tumor initiating cell populations from tumors of various murine models [1]. Sca-1 induced disruption of TGF-β signaling is required in vivo tumorigenesis in breast cancer models [2, 3-5]. The role of human Ly6 gene family is only beginning to be appreciated in recent literature [6-9]. To study the significance of Ly6 gene family members, we have visualized one hundred thirty gene expression omnibus (GEO) dataset using Oncomine (Invitrogen) and Georgetown Database of Cancer (G-DOC). This analysis showed that four different members Ly6D, Ly6E, Ly6H or Ly6K have increased gene expressed in bladder, brain and CNS, breast, colorectal, cervical, ovarian, lung, head and neck, pancreatic and prostate cancer than their normal counter part tissues. Increased expression of Ly6D, Ly6E, Ly6H or Ly6K was observed in sub-set of cancer type. The increased expression of Ly6D, Ly6E, Ly6H and Ly6K was found to be associated with poor outcome in ovarian, colorectal, gastric, breast, lung, bladder or brain and CNS as observed by KM plotter and PROGgeneV2 platform. The remarkable findings of increased expression of Ly6 family members and its positive correlation with poor outcome on patient survival in multiple cancer type indicate that Ly6 family members Ly6D, Ly6E, Ly6K and Ly6H will be an important targets in clinical practice as marker of poor prognosis and for developing novel therapeutics in multiple cancer type. PMID:26862846

  20. Synthesis of 9,9'-[1,2-ethanediylbis(oxymethylene)]bis-2-amino-1,9-dihydro-6H-purin-6-one, an impurity of acyclovir.

    PubMed

    Suárez, Rosa M; Matía, Maria Paz; Novella, José Luis; Molina, Andres; Cosme, Antonio; Vaquero, Juan José; Alvarez-Builla, Julio

    2012-07-25

    The synthesis of 9,9'-[1,2-ethanediylbis(oxymethylene)]bis-2-amino-1,9-dihydro-6H-purin-6-one, a minor impurity of acyclovir, is described. Starting with commercial N-(9-acetyl-6-oxo-1H-purin-2-yl)acetamide, the process uses an acid catalysed phase transfer catalysis (PTC) process to produce the selective alkylation at the 9 position of the guanine ring.

  1. Hydride-induced anionic cyclization: an efficient method for the synthesis of 6-H-phenanthridines via a transition-metal-free process.

    PubMed

    Chen, Wei-Lin; Chen, Chun-Yuan; Chen, Yan-Fu; Hsieh, Jen-Chieh

    2015-03-20

    A novel procedure for hydride-induced anionic cyclization has been developed. It includes the reduction of a biaryl bromo-nitrile with a nucleophilic aromatic substitution (S(N)Ar). A range of polysubstituted 6-H-phenanthridines were so obtained in moderate to good yield with good substrate tolerance. This method involves a concise transition-metal-free process and was applied to synthesize natural alkaloids.

  2. Spin-polarized Dirac cones and topological nontriviality in a metal-organic framework Ni2C24S6H12.

    PubMed

    Wei, Lin; Zhang, Xiaoming; Zhao, Mingwen

    2016-03-21

    Dirac cones in the band structure make a great contribution to the unique electronic properties of graphene. But the spin-degeneracy of Dirac cones limits the application of graphene in spintronics. Here, using first-principles calculations, we propose a two-dimensional (2D) metal-organic framework (MOF), Ni2C24S6H12, with spin-polarized Dirac cones at the six corners of the Brillouin zone (BZ). Ferromagnetism is quite stable with a high Curie temperature (630 K) as revealed by Monte Carlo simulation within the Ising model. Taking spin-orbit coupling into account, band gaps are opened up at the Dirac point (5.9 meV) and Γ point (10.4 meV) in the BZ, making Ni2C24S6H12 a Chern topological insulator which is implemented for achieving the quantum anomalous Hall effect. These interesting properties enable Ni2C24S6H12 to be a promising candidate material for spintronics device applications.

  3. Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides

    NASA Astrophysics Data System (ADS)

    Jiao, C.; Ahyi, A. C.; Dhar, S.; Morisette, D.; Myers-Ward, R.

    2017-04-01

    We report results on the interface trap density ( D it) of 4H- and 6H-SiC metal-oxide-semiconductor (MOS) capacitors with different interface chemistries. In addition to pure dry oxidation, we studied interfaces formed by annealing thermal oxides in NO or POCl3. The D it profiles, determined by the C- ψ s method, show that, although the as-oxidized 4H-SiC/SiO2 interface has a much higher D it profile than 6H-SiC/SiO2, after postoxidation annealing (POA), both polytypes maintain comparable D it near the conduction band edge for the gate oxides incorporated with nitrogen or phosphorus. Unlike most conventional C- V- or G- ω-based methods, the C- ψ s method is not limited by the maximum probe frequency, therefore taking into account the "fast traps" detected in previous work on 4H-SiC. The results indicate that such fast traps exist near the band edge of 6H-SiC also. For both polytypes, we show that the total interface trap density ( N it) integrated from the C- ψ s method is several times that obtained from the high-low method. The results suggest that the detected fast traps have a detrimental effect on electron transport in metal-oxide-semiconductor field-effect transistor (MOSFET) channels.

  4. Solvation-induced σ-complex structure formation in the gas phase: a revisit to the infrared spectroscopy of [C6H6-(CH3OH)2]+.

    PubMed

    Mizuse, Kenta; Suzuki, Yuta; Mikami, Naohiko; Fujii, Asuka

    2011-10-20

    Structures of the [C(6)H(6)-(CH(3)OH)(2)](+) cluster cation are investigated with infrared (IR) spectroscopy. While the noncovalent type structure has been confirmed for the n = 1 cluster of [C(6)H(6)-(CH(3)OH)(n)](+), only contradictory interpretations have been given for the spectra of n = 2, in which significant changes have been observed with the Ar tagging. In the present study, we revisit IR spectroscopy of the n = 2 cluster from the viewpoint of the σ-complex structure, which includes a covalent bond formation between the benzene and methanol moieties. The observed spectral range is extended to the lower-frequency region, and the spectrum is measured with and without Ar and N(2) tagging. A strongly hydrogen-bonded OH stretch band, which is characteristic to the σ-complex structure, is newly found with the tagging. The remarkable spectral changes with the tagging are interpreted by the competition between the σ-complex and noncovalent complex structures in the [C(6)H(6)-(CH(3)OH)(2)](+) system. This result shows that the microsolvation only with one methanol molecule can induce the σ-complex structure formation.

  5. Organometallic Computational Exercise: Semiempirical Molecular Orbital Calculations on (C6H6)Cr(CO)3 and (B3N3H6Cr(CO)3

    NASA Astrophysics Data System (ADS)

    O'Brien, James F.; Haworth, Daniel T.

    2001-01-01

    A student exercise employing semiempirical molecular orbital calculations in the area of organometallic chemistry is presented. PM3 level calculations are applied to the ground-state structures of C6H6)Cr(CO)3 and (B3N3H6)Cr(CO)3. The calculations are generally successful in computing the known features of the ground-state structures. Comparison of the geometries computed for free and complexed C6H6 and B3N3H6 allow discussion of the reasons for the changes observed. The structures of the transition states for rotation of the rings with respect to Cr(CO)3 are also computed. These results permit calculation of the activation energies for the ring rotations. The activation energies computed at the PM3 level are 0.4 and 18.3 kcal/mol for (C6H6)Cr(CO)3 and (B3N3H6)Cr(CO)3, respectively. These results highlight the differences between the two molecules. Students are encouraged to comment on structural changes in the rings, on the phenomenon of ring rotation in these systems and others such as ferrocene, on the question of the aromaticity of the borazine ring, and on the effect of p back-bonding on the positions of the carbonyl stretching bands in the both complexes.

  6. Characterization of defect levels in semi-insulating 6H-SiC by means of photoinduced transient spectroscopy and modulated photocurrent technique.

    PubMed

    Longeaud, C; Kleider, J P; Kaminski, P; Kozlowski, R; Miczuga, M

    2009-01-28

    Parameters of electrically active defect centres in vanadium-doped 6H silicon carbide (6H-SiC:V) were investigated by means of the photoinduced transient spectroscopy (PITS) and modulated photocurrent (MPC) method. After a short description of the two techniques, experimental results are presented and briefly compared. Our aim is mainly to understand and explain these experimental results. In particular, in the PITS technique a shallow level seems to be at the origin of negative photoconductivity. Besides, in the same temperature range hole and electron levels can be detected at the same time. Finally, the detection of a given level seems to depend on the photon flux used to perform the PITS experiment. As far as the MPC experiment is concerned, it has put into evidence a very efficient shallow level. A numerical calculation was developed to simulate both experiments in order to understand the experimental results. By means of this simulation, we have explained all the phenomena observed experimentally in each technique and we propose a simple model for the distribution of electrically active defect centres in 6H-SiC:V crystals.

  7. Synthesis, spectroscopic characterization and DFT calculations of monohydroxyalkylated derivatives of 1-phenyl-2H,6H-imidazo[1,5-c]quinazoline-3,5-dione

    NASA Astrophysics Data System (ADS)

    Szyszkowska, Agnieszka; Hęclik, Karol; Trzybiński, Damian; Woźniak, Krzysztof; Klasek, Antonin; Zarzyka, Iwona

    2017-01-01

    Synthesis of new derivatives with an imidazo[1,5-c]quinazoline-3,5-dione ring has been presented. Two new alcohols with the imidazo[1,5-c]quinazoline-3,5-dione ring were obtained and characterized by spectral (1H, 13C NMR, IR and UV) and crystallography methods. A reaction chemoselectivity has been observed with a formation of monohydroxyalkyl derivatives of 1-phenyl-2H,6H-imidazo[1,5-c]quinazoline-3,5-dione substituted at the 2. nitrogen atom. The absence of derivatives substituted at the 6. nitrogen atom was proven experimentally. The synthesis with chemoselectivity over 99% without control of the substituent effect happens very rarely. The HOMO-LUMO mappings are reported which reveals the different charge transfer possibilities within the molecule of 1-phenyl-2H,6H-imidazo[1,5-c]quinazoline-3,5-dione in the region of the 2. and the 6. nitrogen atoms. Quantum-mechanical DFT calculations proved to be very useful to explain the reason of selectivity reaction of 1-phenyl-2H,6H-imidazo[1,5-c]quinazoline-3,5-dione with oxiranes.

  8. Enlargement of Step-Free SiC Surfaces by Homoepitaxial Web-Growth of Thin SiC Cantilevers

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G.; Powell, J. Anthony; Beheim, Glenn M.; Benavage, Emye L.; Abel, Phillip B.; Trunek, Andrew J.; Spry, David J.; Dudley, Michael; Vetter, William M.

    2002-01-01

    Lateral homoepitaxial growth of thin cantilevers emanating from mesa patterns that were reactive ion etched into on-axis commercial SiC substrates prior to growth is reported. The thin cantilevers form after pure stepflow growth removes almost all atomic steps from the top surface of a mesa, after which additional adatoms collected by the large step-free surface migrate to the mesa sidewall where they rapidly incorporate into the crystal near the top of the mesa sidewall. The lateral propagation of the step-free cantilevered surface is significantly affected by pregrowth mesa shape and orientation, with the highest lateral expansion rates observed at the inside concave comers of V-shaped pregrowth mesas with arms lengthwise oriented along the {1100} direction. Complete spanning of the interiors of V's and other mesa shapes with concave comers by webbed cantilevers was accomplished. Optical microscopy, synchrotron white beam x-ray topography and atomic force microscopy analysis of webbed regions formed over a micropipe and closed-core screw dislocations show that c-axis propagation of these defects is terminated by the webbing. Despite the nonoptimized process employed in this initial study, webbed surfaces as large as 1.4 x 10(exp -3) square centimeters, more than four times the pregrowth mesa area, were grown. However, the largest webbed surfaces were not completely free of bilayer steps, due to unintentional growth of 3C-SiC that occurred in the nonoptimized process. Further process optimization should enable larger step-free webs to be realized.

  9. Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC

    NASA Astrophysics Data System (ADS)

    Liang, F.; Chen, P.; Zhao, D. G.; Jiang, D. S.; Liu, Z. S.; Zhu, J. J.; Yang, J.; Liu, W.; He, X. G.; Li, X. J.; Li, X.; Liu, S. T.; Yang, H.; Zhang, L. Q.; Liu, J. P.; Zhang, Y. T.; Du, G. T.

    2016-05-01

    A large field emission current density of 2.55 A/cm2 at 20.9 V and a low turn-on voltage of 7.28 V is obtained from the Si-doped 50 nm-thick AlN film, synthesized by metalorganic chemical vapor deposition on the n-type SiC substrates, which is the best result reported for AlN film. Accompanying with atomic force surface micro-images, it is found that this current is achieved owing to a blunting process under a high voltage of 95 V, which can lead to a decrease of the root mean square roughness from 4.23 to 1.03 nm.

  10. Methods for growth of relatively large step-free SiC crystal surfaces

    NASA Technical Reports Server (NTRS)

    Neudeck, Philip G. (Inventor); Powell, J. Anthony (Inventor)

    2002-01-01

    A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.

  11. Stellar Origins of C-13 and N-15-Enriched Presolar SiC Grains

    NASA Technical Reports Server (NTRS)

    Liu, Nan; Nittler, Larry R.; Alexander, Conel M. O’D.; Wang, Jianhua; Pignatari, Marco; Jose, Jordi; Nguyen, Ann

    2016-01-01

    Extreme excesses of 13 C ( C (12 C/ 13 C<10) and 15 N ( N (14 N/ 15 N< 20) in rare presolar SiC 20) in rare presolar SiClar SiC grains have been considered diagnostic of an origin in classical novae [1], though an origin in core-collapse supernovae (CCSNe) has also been proposed [2]. We report multi-element isotopic data for 19 13 C- and 15 N-enriched presolar SiC grains(12 C/13 C<16 and 14 N/ 15 N<150) from an acid resistant residue of the Murchison meteorite. These grains are enriched in 13 C and15 N, but with quite diverse Si isotopic signatures. Four grains with isotopic signatures. Four grains with isotopic signatures. Four grains with isotopic signatures. Four grains with isotopic signatures.

  12. Layered SiC sheets: a potential catalyst for oxygen reduction reaction.

    PubMed

    Zhang, P; Xiao, B B; Hou, X L; Zhu, Y F; Jiang, Q

    2014-01-22

    The large-scale practical application of fuel cells cannot come true if the high-priced Pt-based electrocatalysts for oxygen reduction reaction (ORR) cannot be replaced by other efficient, low-cost, and stable electrodes. Here, based on density functional theory (DFT), we exploited the potentials of layered SiC sheets as a novel catalyst for ORR. From our DFT results, it can be predicted that layered SiC sheets exhibit excellent ORR catalytic activity without CO poisoning, while the CO poisoning is the major drawback in conventional Pt-based catalysts. Furthermore, the layered SiC sheets in alkaline media has better catalytic activity than Pt(111) surface and have potential as a metal-free catalyst for ORR in fuel cells.

  13. Synthesis of SiC nanorods from sheets of single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Muñoz, E.; Dalton, A. B.; Collins, S.; Zakhidov, A. A.; Baughman, R. H.; Zhou, W. L.; He, J.; O'Connor, C. J.; McCarthy, B.; Blau, W. J.

    2002-06-01

    We report the unexpected synthesis of SiC nanorods during thermally annealing single-walled carbon nanotube sheets (SWNTs) at 1000 °C between two silicon wafers. The exterior layers of the carbon nanotube sheets were converted into a network of SiC nanorods, while the carbon nanotubes interior to the sheet remain unchanged. The nanotube sheets that underwent this reaction were comprised of small diameter nanotubes made by a high-pressure carbon monoxide process (HiPco), which contain iron catalyst. Using the same reaction conditions, SiC formation was not observed for sheets of purified, larger diameter nanotubes made by laser ablation, which contained a small amount of residual metal catalysts.

  14. Oxidation instability of SiC and Si3N4 following thermal excursions

    NASA Technical Reports Server (NTRS)

    Ogbuji, Linus U. J. T.

    1991-01-01

    The effect of thermal excursion and thermal cycling on the oxidation stability of chemical vapor-deposited (CVD) SiC and Si3N4 was studied at 1350 C. Thermal cycling alone produced no noticeable change in oxidation kinetics. However, TEM showed that oxide scales grown in cycles consist of alternating layers of SiO2 and Si2N2O. When the oxidation of CVD SiC or Si3N4 at 1350 C was interrupted with a 1.5-h annealing in Ar at 1500 C, the kinetics of reoxidation at 1350 C were found to be drastically increased. The SiC and Si3N4 then oxidized essentially at the same rate, which is over 50 times the preannealing rate, and comparable to the expected oxidation rate of these materials at 1500 C.

  15. The diffusion welding of 7075Al-3%SiC particles reinforced composites

    NASA Astrophysics Data System (ADS)

    Aydin, M.; Gürler, R.; Türker, M.

    2009-02-01

    A group of 3% SiC particle reinforced Al-7075 alloys was diffusion joined at 560°C between 1 h and 2 h durations under 2 MPa applied pressure in a vacuum of 2 × 10-3 Pa. Optical microscopy and SEM-EDS studies were used to characterise the weldment and the fracture surfaces of all samples investigated. A non-planar interface formation was observed at the bond interface. The maximum shear strength of 137 MPa was obtained with the composite 7075-3% SiC joined for two hours, which is 92% of the shear strength of the parent material. The fracture surface of the 7075-3% SiC composites displayed a non-planar fracture surfaces with some plastic deformation.

  16. Microporous layer based on SiC for high temperature proton exchange membrane fuel cells

    NASA Astrophysics Data System (ADS)

    Lobato, Justo; Zamora, Héctor; Cañizares, Pablo; Plaza, Jorge; Rodrigo, Manuel Andrés

    2015-08-01

    This work reports the evaluation of Silicon Carbide (SiC) for its application in microporous layers (MPL) of HT-PEMFC electrodes and compares results with those obtained using conventional MPL based on Vulcan XC72. Influence of the support load on the MPL prepared with SiC was evaluated, and the MPL were characterized by XRD, Hg porosimetry and cyclic voltammetries. In addition, a short lifetest was carried out to evaluate performance in accelerated stress conditions. Results demonstrate that SiC is a promising alternative to carbonaceous materials because of its higher electrochemical and thermal stability and the positive effect on mass transfer associated to its different pore size distribution. Ohmic resistance is the most significant challenge to be overcome in further studies.

  17. Men Working on Mock-Up of S-IC Thrust Structure

    NASA Technical Reports Server (NTRS)

    1963-01-01

    This photograph depicts Marshall Space Flight Center employees, James Reagin, machinist (top); Floyd McGinnis, machinist; and Ernest Davis, experimental test mechanic (foreground), working on a mock up of the S-IC thrust structure. The S-IC stage is the first stage, or booster, of the 364-foot long Saturn V rocket that ultimately took astronauts to the Moon. The S-IC stage, burned over 15 tons of propellant per second during its 2.5 minutes of operation to take the vehicle to a height of about 36 miles and to a speed of about 6,000 miles per hour. The stage was 138 feet long and 33 feet in diameter. Operating at maximum power, all five of the engines produced 7,500,000 pounds of thrust.

  18. Inside a Diamond Planet: Experimental Investigation of High P-T SiC

    NASA Astrophysics Data System (ADS)

    Daviau, K.; Du, Z.; Lee, K. K. M.

    2015-12-01

    The discovery of hundreds of diverse extrasolar planetary systems implies that there are many worlds in the universe unlike our own. Models indicate that carbon-rich planets, composed largely of SiC and C, may be abundant around carbon rich stars (Kuchner and Seager 2005, Moriarty et al 2014). In order to understand the structure and evolution of such an unfamiliar planet, the basic thermodynamic phase relations of the major materials present must first be constrained. Using the laser heated diamond anvil cell (LHDAC) in combination with Raman analysis and X-Ray diffraction, this study investigates the high pressure and temperature phase diagram of SiC. Microprobe and diffraction data indicate that SiC decomposes at high P-T and that the change follows a negative Clapeyron slope. This has interesting implications for the interior "mantle" structure and dynamics of a SiC-based planet.

  19. Creep behavior of MoSi{sub 2}-SiC composites

    SciTech Connect

    Butt, D.P.; Maloy, S.A.; Kung, H.; Korzekwa, D.A.; Petrovic, J.J.

    1993-12-31

    Using a cylindrical indenter, indentation creep behavior of hot pressed and HIPed MoSi{sub 2}-SiC composites containing 0--40% SiC by volume, was characterized at 1000--1200C, 258--362 MPa. Addition of SiC affects the creep behavior of MoSi{sub 2} in a complex manner by pinning grain boundaries during pressing, thus leading to smaller MoSi{sub 2} grains; by obstructing or altering both dislocation motion and grain boundary sliding; and by increasing the overall yield stress of the material. Comparisons are made between indentation and compressive creep studies. It is shown that under certain conditions, compressive creep and indentation creep measurements yield comparable results after correcting for effective stresses and strain rates beneath the indenter.

  20. High temperature behavior of pressureless-sintered SiC in a steel soaking pit environment

    SciTech Connect

    Wei, G.C.; White, C.L.

    1984-07-01

    Sintered-..cap alpha.. SiC was exposed for about 800 h at about 1250/sup 0/C to a steel soaking pit environment. A slag layer consisting of hematite and low cristobalite in an Fe-K-Ca silicate glass matrix was formed on the external surface of sintered-..cap alpha.. SiC. No measurable corrosion or loss of material was observed. Large angular pores and depletion of graphite sintering aid, observed in the surface region of the as-received material, resulted in a lower-than-usual fracture strength. The fracture strength increased slightly following the exposure. Auger electron spectroscopic analysis identified oxygen penetration in the near-surface region of the exposed material. The results suggested that sintered-..cap alpha.. SiC would be suitable for use as a heat exchanger material in steel soaking pits. 8 references, 8 figures, 1 table.