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Sample records for nbn nanowire single

  1. Probing the hotspot interaction length in NbN nanowire superconducting single photon detectors

    NASA Astrophysics Data System (ADS)

    Renema, J. J.; Gaudio, R.; Wang, Q.; Gaggero, A.; Mattioli, F.; Leoni, R.; van Exter, M. P.; Fiore, A.; de Dood, M. J. A.

    2017-06-01

    We measure the maximal distance at which two absorbed photons can jointly trigger a detection event in NbN nanowire superconducting single photon detector microbridges by comparing the one-photon and two-photon efficiencies of bridges of different overall lengths, from 0 to 400 nm. We find a length of 23 ± 2 nm. This value is in good agreement with the size of the quasiparticle cloud at the time of the detection event.

  2. Design of NbN Superconducting Nanowire Single-Photon Detectors with Enhanced Infrared Detection Efficiency

    NASA Astrophysics Data System (ADS)

    Wang, Q.; Renema, J. J.; Engel, A.; de Dood, M. J. A.

    2017-09-01

    We optimize the design of NbN nanowire superconducting single-photon detectors using the recently discovered position-dependent detection efficiency in these devices. This optimized design of meandering wire NbN detectors maximizes absorption at positions where photon detection is most efficient by altering the field distribution across the wire. In order to calculate the response of the detectors with different geometries, we use a monotonic local detection efficiency from a nanowire and optical absorption distribution via finite-difference-time-domain simulations. The calculations predict a trade-off between average absorption and absorption at the edge, leading to a predicted optimal wire width close to 100 nm for a 1550-nm wavelength, which drops to a 50-nm wire width for a 600-nm wavelength. The absorption at the edges can be enhanced by depositing a silicon nanowire on top of the superconducting nanowire, which improves both the total absorption efficiency and the internal detection efficiency of meandering wire structures. The proposed structure can be integrated in a relatively simple cavity structure to reach absorption efficiencies of 97% for perpendicular and 85% for parallel polarization.

  3. Characterization of NbN films for superconducting nanowire single photon detectors

    SciTech Connect

    Mcdonald, Ross D; Ayala - Valenzuela, Oscar E; Weisse - Bernstein, Nina R; Williamson, Todd L; Hoffbauer, M. A.; Graf, M. J.; Rabin, M. W.

    2011-01-14

    Nanoscopic superconducting meander patterns offer great promise as a new class of cryogenic radiation sensors capable of single photon detection. To realize this potential, control of the superconducting properties on the nanoscale is imperative. To this end, Superconducting Nanowire Single Photon Detectors (SNSPDs) are under development by means Energetic Neutral Atom Beam Lithography and Epitaxy, or ENABLE. ENABLE can growth highly-crystalline, epitaxial thin-film materials, like NbN, at low temperatures; such wide-ranging control of fabrication parameters is enabling the optimization of film properties for single photon detection. T{sub c}, H{sub c2}, {zeta}{sub GL} and J{sub c} of multiple thin films and devices have been studied as a function of growth conditions. The optimization of which has already produced devices with properties rivaling all reports in the existing literature.

  4. High efficiency and rapid response superconducting NbN nanowire single photon detector based on asymmetric split ring metamaterial

    SciTech Connect

    Li, Guanhai; Chen, Xiaoshuang; Wang, Shao-Wei Lu, Wei

    2014-06-09

    With asymmetric split ring metamaterial periodically placed on top of the niobium nitride (NbN) nanowire meander, we theoretically propose a kind of metal-insulator-metallic metamaterial nanocavity to enhance absorbing efficiency and shorten response time of the superconducting NbN nanowire single photon detector (SNSPD) operating at wavelength of 1550 nm. Up to 99.6% of the energy is absorbed and 96.5% dissipated in the nanowire. Meanwhile, taking advantage of this high efficiency absorbing cavity, we implement a more sparse arrangement of the NbN nanowire of the filling factor 0.2, which significantly lessens the nanowire and crucially boosts the response time to be only 40% of reset time in previous evenly spaced meander design. Together with trapped mode resonance, a standing wave oscillation mechanism is presented to explain the high efficiency and broad bandwidth properties. To further demonstrate the advantages of the nanocavity, a four-pixel SNSPD on 10 μm × 10 μm area is designed to further reduce 75% reset time while maintaining 70% absorbing efficiency. Utilizing the asymmetric split ring metamaterial, we show a higher efficiency and more rapid response SNSPD configuration to contribute to the development of single photon detectors.

  5. Multi-channeled NbN superconducting single photon detectors (SSPDs) system with NbN meander nanowires

    SciTech Connect

    Fujiwara, Mikio; Sasaki, Masahide; Miki, Shigehito; Wang Zhen

    2009-04-13

    A superconducting single photon detector (SSPD) is promising candidate of the detector in a quantum key distribution (QKD) system, because of its low dark count and high speed repetition rate. We have developed the SSPD system cooled by a GM cryocooler. In this system, and the work surface can be cooled 2.95 K and up to 6 SSPDs can be installed. The active areas of SSPDs are 10x10 {mu}m{sup 2} or 20x20 {mu}m{sup 2}, and the system detection efficiency at dark count rate of 100 Hz reached 2.6% at a wavelength of 1550 nm.

  6. Large sensitive-area NbN nanowire superconducting single-photon detectors fabricated on single-crystal MgO substrates

    SciTech Connect

    Miki, Shigehito; Fujiwara, Mikio; Sasaki, Masahide; Wang Zhen; Baek, Burm; Nam, Sae Woo; Miller, Aaron J.; Hadfield, Robert H.

    2008-02-11

    We report on the performance of large area NbN nanowire superconducting single-photon detectors (SSPDs). 20x20 {mu}m{sup 2} area SSPDs with 80 and 100 nm linewidths and 50% fill factor were fabricated in 4-nm-thick NbN films grown on single-crystal MgO substrates. The high quality of the devices was verified by electrical and optical testing and compares favorably to measurements of 10x10 {mu}m{sup 2} area SSPDs. Measurements of kinetic inductance versus bias current indicate that the constriction density is low. The fiber-coupled detection efficiency of the devices was 0.4%-3.5% at 100 Hz dark count rate.

  7. Quantum and thermal phase slips in superconducting niobium nitride (NbN) ultrathin crystalline nanowire: application to single photon detection.

    PubMed

    Delacour, Cécile; Pannetier, Bernard; Villegier, Jean-Claude; Bouchiat, Vincent

    2012-07-11

    We present low-temperature electronic transport properties of superconducting nanowires obtained by nanolithography of 4-nm-thick niobium nitride (NbN) films epitaxially grown on sapphire substrate. Below 6 K, clear evidence of phase slippages is observed in the transport measurements. Upon lowering the temperature, we observe the signatures of a crossover between a thermal and a quantum behavior in the phase slip regimes. We find that phase slips are stable even at the lowest temperatures and that no hotspot is formed. The photoresponse of these nanowires is measured as a function of the light irradiation wavelength and temperature and exhibits a behavior comparable with previous results obtained on thicker films.

  8. Broadening of hot-spot response spectrum of superconducting NbN nanowire single-photon detector with reduced nitrogen content

    NASA Astrophysics Data System (ADS)

    Henrich, D.; Dörner, S.; Hofherr, M.; Il'in, K.; Semenov, A.; Heintze, E.; Scheffler, M.; Dressel, M.; Siegel, M.

    2012-10-01

    The spectral detection efficiency and the dark count rate of superconducting nanowire single-photon detectors (SNSPD) have been studied systematically on detectors made from thin NbN films with different chemical compositions. Reduction of the nitrogen content in the 4 nm thick NbN films results in a decrease of the dark count rates more than two orders of magnitude and in a red shift of the cut-off wavelength of the hot-spot SNSPD response. The observed phenomena are explained by an improvement of uniformity of NbN films that has been confirmed by a decrease of resistivity and an increase of the ratio of the measured critical current to the depairing current. The latter factor is considered as the most crucial for both the cut-off wavelength and the dark count rates of SNSPD. Based on our results we propose a set of criteria for material properties to optimize SNSPD in the infrared spectral region.

  9. Bias sputtered NbN and superconducting nanowire devices

    NASA Astrophysics Data System (ADS)

    Dane, Andrew E.; McCaughan, Adam N.; Zhu, Di; Zhao, Qingyuan; Kim, Chung-Soo; Calandri, Niccolo; Agarwal, Akshay; Bellei, Francesco; Berggren, Karl K.

    2017-09-01

    Superconducting nanowire single photon detectors (SNSPDs) promise to combine near-unity quantum efficiency with >100 megacounts per second rates, picosecond timing jitter, and sensitivity ranging from x-ray to mid-infrared wavelengths. However, this promise is not yet fulfilled, as superior performance in all metrics is yet to be combined into one device. The highest single-pixel detection efficiency and the widest bias windows for saturated quantum efficiency have been achieved in SNSPDs based on amorphous materials, while the lowest timing jitter and highest counting rates were demonstrated in devices made from polycrystalline materials. Broadly speaking, the amorphous superconductors that have been used to make SNSPDs have higher resistivities and lower critical temperature (Tc) values than typical polycrystalline materials. Here, we demonstrate a method of preparing niobium nitride (NbN) that has lower-than-typical superconducting transition temperature and higher-than-typical resistivity. As we will show, NbN deposited onto unheated SiO2 has a low Tc and high resistivity but is too rough for fabricating unconstricted nanowires, and Tc is too low to yield SNSPDs that can operate well at liquid helium temperatures. By adding a 50 W RF bias to the substrate holder during sputtering, the Tc of the unheated NbN films was increased by up to 73%, and the roughness was substantially reduced. After optimizing the deposition for nitrogen flow rates, we obtained 5 nm thick NbN films with a Tc of 7.8 K and a resistivity of 253 μΩ cm. We used this bias sputtered room temperature NbN to fabricate SNSPDs. Measurements were performed at 2.5 K using 1550 nm light. Photon count rates appeared to saturate at bias currents approaching the critical current, indicating that the device's quantum efficiency was approaching unity. We measured a single-ended timing jitter of 38 ps. The optical coupling to these devices was not optimized; however, integration with front-side optical

  10. Superconductivity in highly disordered NbN nanowires

    NASA Astrophysics Data System (ADS)

    Arutyunov, K. Yu; Ramos-Álvarez, A.; Semenov, A. V.; Korneeva, Yu P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol'tsman, G. N.

    2016-11-01

    The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c ˜ (1-T/T c)3/2. We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short ‘weak links’ with slightly reduced local critical temperature T c. Hence, one may conclude that an ‘exotic’ intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links.

  11. Superconductivity in highly disordered NbN nanowires.

    PubMed

    Arutyunov, K Yu; Ramos-Álvarez, A; Semenov, A V; Korneeva, Yu P; An, P P; Korneev, A A; Murphy, A; Bezryadin, A; Gol'tsman, G N

    2016-11-25

    The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c ∼ (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links.

  12. Large-area NbN superconducting nanowire avalanche photon detectors with saturated detection efficiency

    NASA Astrophysics Data System (ADS)

    Murphy, Ryan P.; Grein, Matthew E.; Gudmundsen, Theodore J.; McCaughan, Adam; Najafi, Faraz; Berggren, Karl K.; Marsili, Francesco; Dauler, Eric A.

    2015-05-01

    Superconducting circuits comprising SNSPDs placed in parallel—superconducting nanowire avalanche photodetectors, or SNAPs—have previously been demonstrated to improve the output signal-to-noise ratio (SNR) by increasing the critical current. In this work, we employ a 2-SNAP superconducting circuit with narrow (40 nm) niobium nitride (NbN) nanowires to improve the system detection efficiency to near-IR photons while maintaining high SNR. Additionally, while previous 2-SNAP demonstrations have added external choke inductance to stabilize the avalanching photocurrent, we show that the external inductance can be entirely folded into the active area by cascading 2-SNAP devices in series to produce a greatly increased active area. We fabricated series-2-SNAP (s2-SNAP) circuits with a nanowire length of 20 μm with cascades of 2-SNAPs providing the choke inductance necessary for SNAP operation. We observed that (1) the detection efficiency saturated at high bias currents, and (2) the 40 nm 2-SNAP circuit critical current was approximately twice that for a 40 nm non-SNAP configuration.

  13. Enhancement of superconductivity in NbN nanowires by negative electron-beam lithography with positive resist

    NASA Astrophysics Data System (ADS)

    Charaev, I.; Silbernagel, T.; Bachowsky, B.; Kuzmin, A.; Doerner, S.; Ilin, K.; Semenov, A.; Roditchev, D.; Vodolazov, D. Yu.; Siegel, M.

    2017-08-01

    We performed comparative experimental investigation of superconducting NbN nanowires which were prepared by means of positive- and negative electron-beam lithography with the same positive tone Poly-methyl-methacrylate (PMMA) resist. We show that nanowires with a thickness 4.9 nm and widths less than 100 nm demonstrate at 4.2 K higher critical temperature and higher density of critical and retrapping currents when they are prepared by negative lithography. Also the ratio of the experimental critical current to the depairing critical current is larger for nanowires prepared by negative lithography. We associate the observed enhancement of superconducting properties with the difference in the degree of damage that nanowire edges sustain in the lithographic process. A whole range of advantages which is offered by the negative lithography with positive PMMA resist ensures high potential of this technology for improving the performance metrics of superconducting nanowire singe-photon detectors.

  14. Rise time of voltage pulses in NbN superconducting single photon detectors

    SciTech Connect

    Smirnov, K. V.; Divochiy, A. V.; Karpova, U. V.; Morozov, P. V.; Zotova, A. N.; Vodolazov, D. Yu.

    2016-08-01

    We have found experimentally that the rise time of voltage pulse in NbN superconducting single photon detectors increases nonlinearly with increasing the length of the detector L. The effect is connected with dependence of resistance of the detector R{sub n}, which appears after photon absorption, on its kinetic inductance L{sub k} and, hence, on the length of the detector. This conclusion is confirmed by our calculations in the framework of two temperature model.

  15. Position-Dependent Local Detection Efficiency in a Nanowire Superconducting Single-Photon Detector.

    PubMed

    Renema, J J; Wang, Q; Gaudio, R; Komen, I; op 't Hoog, K; Sahin, D; Schilling, A; van Exter, M P; Fiore, A; Engel, A; de Dood, M J A

    2015-07-08

    We probe the local detection efficiency in a nanowire superconducting single-photon detector along the cross-section of the wire with a far subwavelength resolution. We experimentally find a strong variation in the local detection efficiency of the device. We demonstrate that this effect explains previously observed variations in NbN detector efficiency as a function of device geometry.

  16. Recent advances in superconducting NbN single-photon detector development

    NASA Astrophysics Data System (ADS)

    Korneev, Alexander; Divochiy, Alexander; Vachtomin, Yury; Korneeva, Yulia; Florya, Irina; Elezov, Michael; Manova, Nadezhda; Tarkhov, Michael; An, Pavel; Kardakova, Anna; Isupova, Anastasiya; Chulkova, Galina; Smirnov, Konstantin; Kaurova, Natalya; Seleznev, Vitaliy; Voronov, Boris; Goltsman, Gregory

    2011-06-01

    Superconducting single-photon detector (SSPD) is a planar nanostructure patterned from 4-nm-thick NbN film deposited on sapphire substrate. The sensitive element of the SSPD is 100-nm-wide NbN strip. The device is operated at liquid helium temperature. Absorption of a photon leads to a local suppression of superconductivity producing subnanosecond-long voltage pulse. In infrared (at 1550 nm and longer wavelengths) SSPD outperforms avalanche photodiodes in terms of detection efficiency (DE), dark counts rate, maximum counting rate and timing jitter. Efficient single-mode fibre coupling of the SSPD enabled its usage in many applications ranging from single-photon sources research to quantum cryptography. Recently we managed to improve the SSPD performance and measured 25% detection efficiency at 1550 nm wavelength and dark counts rate of 10 s-1. We also improved photon-number resolving SSPD (PNR-SSPD) which realizes a spatial multiplexing of incident photons enabling resolving of up to 4 simultaneously absorbed photons. Another improvement is the increase of the photon absorption using a λ/4 microcavity integrated with the SSPD. And finally in our strive to increase the DE at longer wavelengths we fabricated SSPD with the strip almost twice narrower compared to the standard 100 nm and demonstrated that in middle infrared (about 3 μm wavelength) these devices have DE several times higher compared to the traditional SSPDs.

  17. Single nanowire extinction spectroscopy.

    PubMed

    Giblin, Jay; Vietmeyer, Felix; McDonald, Matthew P; Kuno, Masaru

    2011-08-10

    Here we show the first direct extinction spectra of single one-dimensional (1D) semiconductor nanostructures obtained at room temperature utilizing a spatial modulation approach. (1) For these materials, ensemble averaging in conventional extinction spectroscopy has limited our understanding of the interplay between carrier confinement and their electrostatic interactions. (2-4) By probing individual CdSe nanowires (NWs), we have identified and assigned size-dependent exciton transitions occurring across the visible. In turn, we have revealed the existence of room temperature 1D excitons in the narrowest NWs.

  18. Electrochemically Grown Single Nanowire Sensors

    NASA Technical Reports Server (NTRS)

    Yun, Minhee; Lee, Choonsup; Vasquez, Richard P.; Penner, Reginald; Bangar, Mangesh; Mulchandani, Ashok; Myung, Nosang V.

    2004-01-01

    We report a fabrication technique that is potentially capable of producing arrays of individually addressable nanowire sensors with controlled dimensions, positions, alignments, and chemical compositions. The concept has been demonstrated with electrodeposition of palladium wires with 75 nm to 350 nm widths. We have also fabricated single and double conducting polymer nanowires (polyaniline and polypyrrole) with 100nm and 200nm widths using electrochemical direct growth. Using single Pd nanowires, we have also demonstrated hydrogen sensing. It is envisioned that these are the first steps towards nanowire sensor arrays capable of simultaneously detecting multiple chemical species.

  19. Local anodic oxidation of superconducting NbN thin films by an atomic force microscope

    NASA Astrophysics Data System (ADS)

    Y Yang, X.; You, L. X.; Wang, X.; Zhang, L. B.; Kang, L.; Wu, P. H.

    2009-12-01

    A local anodic oxidation technique has been applied to create oxidized nanowires on superconducting NbN thin films using an atomic force microscope (AFM) with a conductive probe. The AFM surface topography shows that both the width and height of the oxidized nanowires increase with increasing applied probe voltage under a certain relative humidity and a probe scan rate. The resistances of the NbN microbridges with and without an oxidized nanowire crossing were measured, and the results indicate that the oxidized nanowires with height of more than 8 nm are fully oxidized. The R-T and I-V characteristics of the NbN microbridges with the oxide wire of less than 8 nm were also obtained and analyzed. Methods for fabricating devices such as superconducting single photon detectors and superconducting hot electron bolometer mixers using this technology are discussed.

  20. Single crystalline mesoporous silicon nanowires

    SciTech Connect

    Hochbaum, A.I.; Gargas, Daniel; Jeong Hwang, Yun; Yang, Peidong

    2009-08-04

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. These porous nanowires also retain the crystallographic orientation of the wafer from which they are etched. Electron microscopy and diffraction confirm their single-crystallinity and reveal the silicon surrounding the pores is as thin as several nanometers. Confocal fluorescence microscopy showed that the photoluminescence (PL) of these arrays emanate from the nanowires themselves, and their PL spectrum suggests that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices.

  1. Single crystalline mesoporous silicon nanowires.

    PubMed

    Hochbaum, Allon I; Gargas, Daniel; Hwang, Yun Jeong; Yang, Peidong

    2009-10-01

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. These porous nanowires also retain the crystallographic orientation of the wafer from which they are etched. Electron microscopy and diffraction confirm their single-crystallinity and reveal the silicon surrounding the pores is as thin as several nanometers. Confocal fluorescence microscopy showed that the photoluminescence (PL) of these arrays emanate from the nanowires themselves, and their PL spectrum suggests that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices.

  2. Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors

    NASA Technical Reports Server (NTRS)

    Stern, Jeffrey A.; Farr, William H.; Leduc, Henry G.; Bumble, Bruce

    2008-01-01

    Superconducting-nanowire single-photon detectors (SNSPDs) in which Nb(x)Ti(1-x)N (where x<1) films serve as the superconducting materials have shown promise as superior alternatives to previously developed SNSPDs in which NbN films serve as the superconducting materials. SNSPDs have potential utility in optical communications and quantum cryptography. Nb(x)Ti(1-x)N is a solid solution of NbN and TiN, and has many properties similar to those of NbN. It has been found to be generally easier to stabilize Nb(x)Ti(1-x)N in the high-superconducting-transition temperature phase than it is to so stabilize NbN. In addition, the resistivity and penetration depth of polycrystalline films of Nb(x)Ti(1-x)N have been found to be much smaller than those of films of NbN. These differences have been hypothesized to be attributable to better coupling at grain boundaries within Nb(x)Ti(1-x)N films.

  3. Single crystalline mesoporous silicon nanowires

    SciTech Connect

    Hochbaum, Allon; Dargas, Daniel; Hwang, Yun Jeong; Yang, Peidong

    2009-08-18

    Herein we demonstrate a novel electroless etching synthesis of monolithic, single-crystalline, mesoporous silicon nanowire arrays with a high surface area and luminescent properties consistent with conventional porous silicon materials. The photoluminescence of these nanowires suggest they are composed of crystalline silicon with small enough dimensions such that these arrays may be useful as photocatalytic substrates or active components of nanoscale optoelectronic devices. A better understanding of this electroless route to mesoporous silicon could lead to facile and general syntheses of different narrow bandgap semiconductor nanostructures for various applications.

  4. Single gallium nitride nanowire lasers.

    PubMed

    Johnson, Justin C; Choi, Heon-Jin; Knutsen, Kelly P; Schaller, Richard D; Yang, Peidong; Saykally, Richard J

    2002-10-01

    There is much current interest in the optical properties of semiconductor nanowires, because the cylindrical geometry and strong two-dimensional confinement of electrons, holes and photons make them particularly attractive as potential building blocks for nanoscale electronics and optoelectronic devices, including lasersand nonlinear optical frequency converters. Gallium nitride (GaN) is a wide-bandgap semiconductor of much practical interest, because it is widely used in electrically pumped ultraviolet-blue light-emitting diodes, lasers and photodetectors. Recent progress in microfabrication techniques has allowed stimulated emission to be observed from a variety of GaN microstructures and films. Here we report the observation of ultraviolet-blue laser action in single monocrystalline GaN nanowires, using both near-field and far-field optical microscopy to characterize the waveguide mode structure and spectral properties of the radiation at room temperature. The optical microscope images reveal radiation patterns that correlate with axial Fabry-Perot modes (Q approximately 10(3)) observed in the laser spectrum, which result from the cylindrical cavity geometry of the monocrystalline nanowires. A redshift that is strongly dependent on pump power (45 meV microJ x cm(-2)) supports the idea that the electron-hole plasma mechanism is primarily responsible for the gain at room temperature. This study is a considerable advance towards the realization of electron-injected, nanowire-based ultraviolet-blue coherent light sources.

  5. Single gold nanowire electrodes and single Pt@Au nanowire electrodes: electrochemistry and applications.

    PubMed

    Zhang, Yaoyao; Xu, Shen; Xiao, Xiaoqing; Liu, Yong; Qian, Yuanyuan; Li, Yongxin

    2017-03-02

    Single Au nanowire electrodes and single Pt@Au nanowire electrodes showed steady-state voltammetric responses and a fast electron-transfer rate, which have been used to fabricate an E-DNA sensor and investigate the oxygen reduction reaction at the single nanowire level.

  6. Experimental investigation of the detection mechanism in WSi nanowire superconducting single photon detectors

    SciTech Connect

    Gaudio, Rosalinda Zhou, Zili; Fiore, Andrea; Renema, Jelmer J.; Exter, Martin P. van; Dood, Michiel J. A. de; Verma, Varun B.; Lita, Adriana E.; Shainline, Jeffrey; Stevens, Martin J.; Mirin, Richard P.; Nam, Sae Woo

    2016-07-18

    We use quantum detector tomography to investigate the detection mechanism in WSi nanowire superconducting single photon detectors. To this purpose, we fabricated a 250 nm wide and 250 nm long WSi nanowire and measured its response to impinging photons with wavelengths ranging from λ = 900 nm to λ = 1650 nm. Tomographic measurements show that the detector response depends on the total excitation energy only. Moreover, for total absorbed energies >0.8 eV the current–energy relation is linear, similar to what was observed in NbN nanowires, whereas the current–energy relation deviates from linear behavior for total energies below 0.8 eV.

  7. Single mode lasing in coupled nanowires

    NASA Astrophysics Data System (ADS)

    Xiao, Yao; Meng, Chao; Wu, Xiaoqin; Tong, Limin

    2011-07-01

    We demonstrate single mode lasing in coupled CdSe nanowires. By coupling two 420 nm diameter CdSe nanowires to form an X-structure cavity, single-mode lasing emission around 734.3 nm is obtained with line width of 0.11 nm and lasing threshold of about 120 μJ/cm2. Mode selection in the lasing nanowire is realized via Vernier effect in the coupled cavities. Our results suggest a simple approach to single-mode nanowire lasers.

  8. Fiber-coupled quantum-communications receiver based on two NbN superconducting single-photon detectors

    NASA Astrophysics Data System (ADS)

    Slysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Górska, M.; Latta, C.; Zwiller, V.; Pearlman, A.; Cross, A.; Korneev, A.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol'tsman, G.; Verevkin, A.; Currie, M.; Sobolewski, R.

    2005-09-01

    We present the design and performance of a novel, two-channel single-photon receiver, based on two fiber-coupled NbN superconducting single-photon detectors (SSPDs). The SSPDs are nanostructured superconducting meanders covering an area of 100 μm2 and are known for ultrafast and efficient counting of single, visible-to-infrared photons. Their operation has been explained within a phenomenological hot-electron photoresponse model. Our receiver is intended for fiber-based quantum cryptography and communication systems, operational at near-infrared (NIR) telecommunication wavelengths, λ = 1.3 μm and λ = 1.55 μm. Coupling between the NbN detector and a single-mode optical fiber was achieved using a specially designed, micromechanical photoresist ring, positioned directly over the SSPD active area. The positioning accuracy of the ring was below 1 μm. The receiver with SSPDs was placed (immersed) in a standard liquid-helium transport Dewar and kept without interruption for over two months at 4.2 K. At the same time, the optical fiber inputs and electrical outputs were kept at room temperature. Our best system reached a system quantum efficiency of up to 0.3 % in the NIR radiation range, with the detector coupling efficiency of about 30 %. The response time was measured to be about 250 ps and was limited by our read-out electronics. The measured jitter was close to 35 ps. The presented performance parameters show that our NIR single photon detectors are suitable for practical quantum cryptography and for applications in quantum-correlation experiments.

  9. FOURTH SEMINAR TO THE MEMORY OF D.N. KLYSHKO: Superconducting single-photon ultrathin NbN film detector

    NASA Astrophysics Data System (ADS)

    Korneev, A. A.; Minaeva, O. V.; Rubtsova, Inna A.; Milostnaya, I. I.; Chulkova, G. M.; Voronov, B. M.; Smirnov, K. V.; Seleznev, V. A.; Gol'tsman, G. N.; Pearlman, A.; Slysz, W.; Cross, A.; Alvarez, P.; Verevkin, A.; Sobolewski, R.

    2005-08-01

    Superconducting single-photon ultrathin NbN film detectors are studied. The development of manufacturing technology of detectors and the reduction of their operating temperature down to 2 K resulted in a considerable increase in their quantum efficiency, which reached in the visible region (at 0.56 μm) 30%—40%, i.e., achieved the limit determined by the absorption coefficient of the film. The quantum efficiency exponentially decreases with increasing wavelength, being equal to ~20% at 1.55 μm and ~0.02% at 5 μm. For the dark count rate of ~10-4s-1, the experimental equivalent noise power was 1.5×10-20 W Hz-1/2; it can be decreased in the future down to the record low value of 5×10-21 W Hz-1/2. The time resolution of the detector is 30 ps.

  10. Spiral superconducting nanowire single-photon detector with efficiency over 50% at 1550 nm wavelength

    NASA Astrophysics Data System (ADS)

    Huang, J.; Zhang, W. J.; You, L. X.; Liu, X. Y.; Guo, Q.; Wang, Y.; Zhang, L.; Yang, X. Y.; Li, H.; Wang, Z.; Xie, X. M.

    2017-07-01

    Superconducting nanowire single-photon detectors (SNSPDs) are widely used for the detection of visible and near-infrared single photons. Due to the nature of the polarization sensitive absorption of the nanowire, the detection efficiency (DE) of the meander SNSPD is polarization sensitive. In order to obtain a polarization-insensitive device with high DE, we fabricated NbN SNSPDs with spiral structure, which were embedded into an optical cavity. No meaningful current crowding effect was observed in the spiral SNSPDs. The spiral SNSPD showed a maximal system detection efficiency of 52.5% at 1550 nm with a dark count rate of 100 Hz and a polarization extinction ratio of 1.04, due to the combination of a spiral geometry and an optical cavity.

  11. Intrinsic detection efficiency of superconducting nanowire single-photon detectors with different thicknesses

    NASA Astrophysics Data System (ADS)

    Hofherr, M.; Rall, D.; Ilin, K.; Siegel, M.; Semenov, A.; Hübers, H.-W.; Gippius, N. A.

    2010-07-01

    We evaluate experimentally the intrinsic detection efficiency (IDE) of superconducting NbN nanowire single-photon detectors in the range of wire thicknesses from 4 to 12 nm. The study is performed in the broad spectral interval between near-ultraviolet (wavelength 400 nm) and near-infrared (wavelength 2000 nm) light with plane waves at normal incidence. For visible light the IDE of the thinnest detectors reaches 70%. We use numerically computed absorptance of the nanowire-structures for the analysis of the experimental data. Variations in the detection efficiency with both the wire thickness and the wavelength evidence the red boundary of the hot-spot photon-detection mechanism. We explain the detection at larger wavelengths invoking thermal excitation of magnetic Pearl vortices over the potential barrier at the edges of the wire.

  12. Large-sensitive-area superconducting nanowire single-photon detector at 850 nm with high detection efficiency.

    PubMed

    Li, Hao; Zhang, Lu; You, Lixing; Yang, Xiaoyan; Zhang, Weijun; Liu, Xiaoyu; Chen, Sijing; Wang, Zhen; Xie, Xiaoming

    2015-06-29

    Satellite-ground quantum communication requires single-photon detectors of 850-nm wavelength with both high detection efficiency and large sensitive area. We developed superconducting nanowire single-photon detectors (SNSPDs) on one-dimensional photonic crystals, which acted as optical cavities to enhance the optical absorption, with a sensitive-area diameter of 50 μm. The fabricated multimode fiber coupled NbN SNSPDs exhibited a maximum system detection efficiency (DE) of up to 82% and a DE of 78% at a dark count rate of 100 Hz at 850-nm wavelength as well as a system jitter of 105 ps.

  13. Single-photon detection using magnesium diboride superconducting nanowires

    NASA Astrophysics Data System (ADS)

    Shibata, H.; Takesue, H.; Honjo, T.; Akazaki, T.; Tokura, Y.

    2010-11-01

    We fabricated 10 nm thick MgB2 nanowires with a width down to 100 nm using the liftoff process. The I-V characteristics of the nanowire show hysteresis and a sharp voltage jump at Ic. Though a 150 nm wide nanowire exhibits the capacity for detecting a single photon at 405 nm wavelength, the nanowire is too wide to detect a single photon at 1560 nm. A 100 nm wide nanowire exhibits the capacity for detecting single photons in the 405-1560 nm wavelength range. This indicates a possible application of MgB2 as a high-performance superconducting nanowire single-photon detector.

  14. Effect of the wire width on the intrinsic detection efficiency of superconducting-nanowire single-photon detectors

    SciTech Connect

    Lusche, R. Semenov, A.; Ilin, K.; Siegel, M.; Korneeva, Y.; Trifonov, A.; Korneev, A.; Goltsman, G.; Vodolazov, D.; Hübers, H.-W.

    2014-07-28

    A thorough spectral study of the intrinsic single-photon detection efficiency in superconducting TaN and NbN nanowires with different widths has been performed. The experiment shows that the cut-off of the intrinsic detection efficiency at near-infrared wavelengths is most likely controlled by the local suppression of the barrier for vortex nucleation around the absorption site. Beyond the cut-off quasi-particle diffusion in combination with spontaneous, thermally activated vortex crossing explains the detection process. For both materials, the reciprocal cut-off wavelength scales linearly with the wire width where the scaling factor agrees with the hot-spot detection model.

  15. Polarization-resolved terahertz third-harmonic generation in a single-crystal superconductor NbN: Dominance of the Higgs mode beyond the BCS approximation

    NASA Astrophysics Data System (ADS)

    Matsunaga, Ryusuke; Tsuji, Naoto; Makise, Kazumasa; Terai, Hirotaka; Aoki, Hideo; Shimano, Ryo

    2017-07-01

    Recent advances in time-domain terahertz (THz) spectroscopy have unveiled that resonantly enhanced strong THz third-harmonic generation (THG) mediated by the collective Higgs amplitude mode occurs in s -wave superconductors, where charge-density fluctuations (CDFs) have been shown to also contribute to the nonlinear third-order susceptibility. It has been theoretically proposed that the nonlinear responses of Higgs and CDF exhibit essentially different polarization dependences. Here we experimentally discriminate the two contributions by polarization-resolved intense THz transmission spectroscopy for a single-crystal NbN film. The result shows that the resonant THG in the transmitted light always appears in the polarization parallel to that of the incident light with no appreciable polarization-angle dependence relative to the crystal axis. When we compare this with the theoretical calculation here with the BCS approximation and the dynamical mean-field theory for a model of NbN constructed from first principles, the experimental result strongly indicates that the Higgs mode rather than the CDF dominates the THG resonance in NbN. A possible mechanism for this is the retardation effect in the phonon-mediated pairing interaction beyond BCS.

  16. Electro-thermal simulation of superconducting nanowire avalanche photodetectors

    SciTech Connect

    Marsili, F.; Najafi, F.; Herder, C.; Berggren, K. K.

    2011-01-01

    We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the device resistance, temperature and current by solving two coupled electrical and thermal differential equations describing the nanowires. The predictions of the model were in good quantitative agreement with the experimental results.

  17. An ultrafast NbN hot-electron single-photon detector for electronic applications

    NASA Astrophysics Data System (ADS)

    Lipatov, A.; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Kouminov, P.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R.

    2002-12-01

    We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm.

  18. Superconducting nanowire single photon detector at 532 nm and demonstration in satellite laser ranging.

    PubMed

    Li, Hao; Chen, Sijing; You, Lixing; Meng, Wengdong; Wu, Zhibo; Zhang, Zhongping; Tang, Kai; Zhang, Lu; Zhang, Weijun; Yang, Xiaoyan; Liu, Xiaoyu; Wang, Zhen; Xie, Xiaoming

    2016-02-22

    Superconducting nanowire single-photon detectors (SNSPDs) at a wavelength of 532 nm were designed and fabricated aiming to satellite laser ranging (SLR) applications. The NbN SNSPDs were fabricated on one-dimensional photonic crystals with a sensitive-area diameter of 42 μm. The devices were coupled with multimode fiber (ϕ = 50 μm) and exhibited a maximum system detection efficiency of 75% at an extremely low dark count rate of <0.1 Hz. An SLR experiment using an SNSPD at a wavelength of 532 nm was successfully demonstrated. The results showed a depth ranging with a precision of ~8.0 mm for the target satellite LARES, which is ~3,000 km away from the ground ranging station at the Sheshan Observatory.

  19. Vibrating property of single Ge based heterostructure nanowires

    NASA Astrophysics Data System (ADS)

    Zhang, Yao; Wang, Chunrui; Xu, Jing

    2013-12-01

    Raman spectrum of single heterostructure nanowire can reflect its unusual lattice vibrations as well as the junction features. In this paper, we report Raman spectra of two morphologies of single Ge based heterostructure nanowire, that is, one is CdSe/Ge biaxial heterostructure nanowires(sample I), another is Ge nanowires is surrounded by CdSe nanoparticles (sample II), which is fabricated by one step thermal evaporation of CdSe and Ge powder. A new mode was observed in Raman spectrum of Ge nanowires surrounded by CdSe nanoparticles, which caused by the interaction of LO mode of CdSe and LO (TO) mode of Ge. The LO (TO) mode of Ge nanowire in CdSe/Ge biaxial heterostructure nanowires and Ge nanowires surrounded by CdSe nanoparticles all has a red-shift in comparison with that of Ge nanowires. The vibrational mode of CdSe in CdSe/Ge biaxial heterostructure nanowires has a red-shift. The vibrational mode of CdSe in Ge nanowires surrounded by CdSe nanoparticles has a blue-shift. The red-shift mode may be caused by quantum confinement effect. The blue-shift mode may be originated from tensile stress or high density of stacking defects. The vibrating mode of the heterostructure nanowires was much sensitive to stacking fault than to quantum confinement effect when the diameter of nanowire is larger than 300nm.

  20. Synthesis and characterization of single crystalline selenium nanowire arrays

    SciTech Connect

    Zhang, X.Y. . E-mail: apzhxy@polyu.edu.hk; Xu, L.H.; Dai, J.Y.; Cai, Y.; Wang, N.

    2006-09-14

    Ordered selenium nanowire arrays with diameters about 40 nm have been fabricated by electrodeposition using anodic porous alumina templates. As determined by X-ray diffraction, Raman spectra, electron diffraction and high-resolution transmission electron microscopy, selenium nanowires have uniform diameters, which are fully controllable. Single crystalline trigonal selenium nanowires have been obtained after postannealing at 180 deg. C. These nanowires are perfect with a c-axis growth orientation. The optical absorption spectra reveal two types of electron transition activity.

  1. Thermal and Thermoelectric Transport in Highly Resistive Single Sb2Se3 Nanowires and Nanowire Bundles.

    PubMed

    Ko, Ting-Yu; Shellaiah, Muthaiah; Sun, Kien Wen

    2016-10-07

    In this study, we measured the thermal conductivity and Seebeck coefficient of single Sb2Se3 nanowires and nanowire bundles with a high resistivity (σ ~ 4.37 × 10(-4) S/m). Microdevices consisting of two adjacent suspended silicon nitride membranes were fabricated to measure the thermal transport properties of the nanowires in vacuum. Single Sb2Se3 nanowires with different diameters and nanowire bundles were carefully placed on the device to bridge the two membranes. The relationship of temperature difference on each heating/sensing suspension membranes with joule heating was accurately determined. A single Sb2Se3 nanowire with a diameter of ~ 680 nm was found to have a thermal conductivity (kNW) of 0.037 ± 0.002 W/m·K. The thermal conductivity of the nanowires is more than an order of magnitude lower than that of bulk materials (k ~ 0.36-1.9 W/m·K) and highly conductive (σ ~ 3 × 10(4) S/m) Sb2Se3 single nanowires (k ~ 1 W/m·K). The measured Seebeck coefficient with a positive value of ~ 661 μV/K is comparable to that of highly conductive Sb2Se3 single nanowires (~ 750 μV/K). The thermal transport between wires with different diameters and nanowire bundles was compared and discussed.

  2. Thermal and Thermoelectric Transport in Highly Resistive Single Sb2Se3 Nanowires and Nanowire Bundles

    PubMed Central

    Ko, Ting-Yu; Shellaiah, Muthaiah; Sun, Kien Wen

    2016-01-01

    In this study, we measured the thermal conductivity and Seebeck coefficient of single Sb2Se3 nanowires and nanowire bundles with a high resistivity (σ ~ 4.37 × 10−4 S/m). Microdevices consisting of two adjacent suspended silicon nitride membranes were fabricated to measure the thermal transport properties of the nanowires in vacuum. Single Sb2Se3 nanowires with different diameters and nanowire bundles were carefully placed on the device to bridge the two membranes. The relationship of temperature difference on each heating/sensing suspension membranes with joule heating was accurately determined. A single Sb2Se3 nanowire with a diameter of ~ 680 nm was found to have a thermal conductivity (kNW) of 0.037 ± 0.002 W/m·K. The thermal conductivity of the nanowires is more than an order of magnitude lower than that of bulk materials (k ~ 0.36–1.9 W/m·K) and highly conductive (σ ~ 3 × 104 S/m) Sb2Se3 single nanowires (k ~ 1 W/m·K). The measured Seebeck coefficient with a positive value of ~ 661 μV/K is comparable to that of highly conductive Sb2Se3 single nanowires (~ 750 μV/K). The thermal transport between wires with different diameters and nanowire bundles was compared and discussed. PMID:27713527

  3. Thermal and Thermoelectric Transport in Highly Resistive Single Sb2Se3 Nanowires and Nanowire Bundles

    NASA Astrophysics Data System (ADS)

    Ko, Ting-Yu; Shellaiah, Muthaiah; Sun, Kien Wen

    2016-10-01

    In this study, we measured the thermal conductivity and Seebeck coefficient of single Sb2Se3 nanowires and nanowire bundles with a high resistivity (σ ~ 4.37 × 10‑4 S/m). Microdevices consisting of two adjacent suspended silicon nitride membranes were fabricated to measure the thermal transport properties of the nanowires in vacuum. Single Sb2Se3 nanowires with different diameters and nanowire bundles were carefully placed on the device to bridge the two membranes. The relationship of temperature difference on each heating/sensing suspension membranes with joule heating was accurately determined. A single Sb2Se3 nanowire with a diameter of ~ 680 nm was found to have a thermal conductivity (kNW) of 0.037 ± 0.002 W/m·K. The thermal conductivity of the nanowires is more than an order of magnitude lower than that of bulk materials (k ~ 0.36–1.9 W/m·K) and highly conductive (σ ~ 3 × 104 S/m) Sb2Se3 single nanowires (k ~ 1 W/m·K). The measured Seebeck coefficient with a positive value of ~ 661 μV/K is comparable to that of highly conductive Sb2Se3 single nanowires (~ 750 μV/K). The thermal transport between wires with different diameters and nanowire bundles was compared and discussed.

  4. Nanowire-based single-cell endoscopy

    NASA Astrophysics Data System (ADS)

    Yan, Ruoxue; Park, Ji-Ho; Choi, Yeonho; Heo, Chul-Joon; Yang, Seung-Man; Lee, Luke P.; Yang, Peidong

    2012-03-01

    One-dimensional smart probes based on nanowires and nanotubes that can safely penetrate the plasma membrane and enter biological cells are potentially useful in high-resolution and high-throughput gene and drug delivery, biosensing and single-cell electrophysiology. However, using such probes for optical communication across the cellular membrane at the subwavelength level remains limited. Here, we show that a nanowire waveguide attached to the tapered tip of an optical fibre can guide visible light into intracellular compartments of a living mammalian cell, and can also detect optical signals from subcellular regions with high spatial resolution. Furthermore, we show that through light-activated mechanisms the endoscope can deliver payloads into cells with spatial and temporal specificity. Moreover, insertion of the endoscope into cells and illumination of the guided laser did not induce any significant toxicity in the cells.

  5. Determining Electrochemical Surface Stress of Single Nanowires.

    PubMed

    Wang, Hui; Shan, Xiaonan; Yu, Hui; Wang, Yan; Schmickler, Wolfgang; Chen, Hong-Yuan; Tao, Nongjian

    2017-02-13

    Electrochemical surface stress is important in nanomaterials because of their large surface-to-volume ratios, which lead to unique mechanical and electrocatalytic properties, but directly measuring this quantity has been challenging. Here we report on experimental determination of the surface stress, and associated electrochemical processes of a single gold nanowire with an optical imaging technique. We show that surface stress changes linearly and reversibly with the potential between 0 and 0.8 V versus Ag/AgCl, but abruptly with large hysteresis, associated with the oxidation and reduction of the nanowire, between 0.8 and 1.5 V. The potential derivative of the surface stress closely resembles the cyclic voltammograms. We described the observations in terms of anion adsorption and surface oxidation/reduction. This work demonstrates a new approach to study electrochemical processes and the associated surface stress changes of nanomaterials.

  6. Optical Properties of Superconducting Nanowire Single-Photon Detectors

    DTIC Science & Technology

    2008-07-07

    A. Lipatov, O. Okunev, G. Chulkova, A. Korneev, K. Smirnov, G. N. Gol’tsman, and A. Semenov, “Detection efficiency of large-active- area NbN single...as the ratio of the number of photons that reach the active area to the number of photons emitted by the photon source. It is relatively...probability that a photon incident on the active area results in a voltage pulse. DDE depends on two quantities, the absorptance A, and the

  7. Single Nanowire Probe for Single Cell Endoscopy and Sensing

    NASA Astrophysics Data System (ADS)

    Yan, Ruoxue

    The ability to manipulate light in subwavelength photonic and plasmonic structures has shown great potentials in revolutionizing how information is generated, transformed and processed. Chemically synthesized nanowires, in particular, offers a unique toolbox not only for highly compact and integrated photonic modules and devices, including coherent and incoherent light sources, waveguides, photodetectors and photovoltaics, but also for new types of nanoscopic bio-probes for spot cargo delivery and in-situ single cell endoscopy and sensing. Such nanowire probes would enable us to carry out intracellular imaging and probing with high spatial resolution, monitor in-vivo biological processes within single living cells and greatly improve our fundamental understanding of cell functions, intracellular physiological processes, and cellular signal pathways. My work is aimed at developing a material and instrumental platform for such single nanowire probe. Successful optical integration of Ag nanowire plasmonic waveguides, which offers deep subwavelength mode confinement, and conventional photonic waveguides was demonstrated on a single nanowire level. The highest plasmonic-photonic coupling efficiency coupling was found at small coupling angles and low input frequencies. The frequency dependent propagation loss was observed in Ag nanowire and was confirmed by quantitative measurement and in agreement with theoretical expectations. Rational integration of dielectric and Ag nanowire waveguide components into hybrid optical-plasmonic routing devices has been demonstrated. This capability is essential for incorporating sub-100nm Ag nanowire waveguides into optical fiber based nanoprobes for single cell endoscopy. The nanoprobe system based on single nanowire waveguides was demonstrated by optically coupling semiconductor or metal nanowire with an optical fiber with tapered tip. This nanoprobe design requires minimal instrumentation which makes it cost efficient and readily

  8. Amplitude distributions of dark counts and photon counts in NbN superconducting single-photon detectors integrated with the HEMT readout

    NASA Astrophysics Data System (ADS)

    Kitaygorsky, J.; Słysz, W.; Shouten, R.; Dorenbos, S.; Reiger, E.; Zwiller, V.; Sobolewski, Roman

    2017-01-01

    We present a new operation regime of NbN superconducting single-photon detectors (SSPDs) by integrating them with a low-noise cryogenic high-electron-mobility transistor and a high-load resistor. The integrated sensors are designed to get a better understanding of the origin of dark counts triggered by the detector, as our scheme allows us to distinguish the origin of dark pulses from the actual photon pulses in SSPDs. The presented approach is based on a statistical analysis of amplitude distributions of recorded trains of the SSPD photoresponse transients. It also enables to obtain information on energy of the incident photons, as well as demonstrates some photon-number-resolving capability of meander-type SSPDs.

  9. Single Pt nanowire electrode: preparation, electrochemistry, and electrocatalysis.

    PubMed

    Li, Yongxin; Wu, Qingqing; Jiao, Shoufeng; Xu, Chaodi; Wang, Lun

    2013-04-16

    A single Pt nanowire electrode (SPNE) was fabricated through HF etching process from Pt disk nanoelectrode and an underpotential deposition (UPD) redox replacement technique. The electrochemical experiments showed that SPNE had steady-state electrochemical responses at redox species solution and the mass transfer rates were affected by the lengths and radii of SPNEs. The prepared SPNEs were utilized to examine the oxygen-reduction reaction in a KOH solution to explore the feasibility of electrocatalytic activity of single Pt nanowire and the results showed that the electrocatalytic activity of SPNE was dependent on the surface position of single Pt nanowire: the tip end position is more active than the sidewall position. Meanwhile, the electrocatalytic activity of SPNE was related to the radius of nanowire. These observations are not only important to understand the structure-function relationship in single nanowire level but have significant implications for the synthesis and selection of novel catalysts with high efficiency used in electrochemistry, energy, bioanalysis, etc.

  10. Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors

    NASA Technical Reports Server (NTRS)

    Stem, Jeffrey A.; Farr, William H.; Leduc, Henry G.; Bumble, Bruce

    2008-01-01

    Superconducting-nanowire singlephoton detectors (SNSPDs) in which Nb(x)Ti(1-x)N (where x<1) films serve as the superconducting materials have shown promise as superior alternatives to previously developed SNSPDs in which NbN films serve as the superconducting materials. SNSPDs have potential utility in optical communications and quantum cryptography. Nb(x)Ti(1-x)N is a solid solution of NbN and TiN, and has many properties similar to those of NbN. It has been found to be generally easier to stabilize NbxTi1 xN in the high-superconducting-transitiontemperature phase than it is to so stabilize NbN. In addition, the resistivity and penetration depth of polycrystalline films of Nb(x)Ti(1-x)N have been found to be much smaller than those of films of NbN. These differences have been hypothesized to be attributable to better coupling at grain boundaries within Nb(x)Ti(1-x)N films.

  11. Mechanical characterization of a single gold nanowire.

    PubMed

    Chang, Ming; Liu, Xiaojun; Chang, Feng-Cheng; Deka, Juti R

    2013-08-01

    Mechanical properties of gold nanowires were individually determined in this investigation using a multifunctional nanomanipulator inside a scanning electron microscope (SEM). Gold nanowires were synthesized by an electrochemical deposition technique. Three different characterization techniques including tensile, buckling and bending tests were adapted to quantitatively determine Young's modulus, yield stress and failure stress of the gold nanowires. The mechanical characterizations show that the nanowires were highly flexible in nature. The excellent resilience and the ability to store elastic energy in these nanowires confirm their potential applications in nano electromechanical devices.

  12. Single crystalline kinked semiconductor nanowire superstructures

    PubMed Central

    Tian, Bozhi; Xie, Ping; Kempa, Thomas J.; Bell, David C.; Lieber, Charles M.

    2009-01-01

    The ability to control and modulate the composition1–4, doping1,3–5, crystal structure6–8 and morphology9,10 of semiconductor nanowires during the synthesis process has allowed researchers to explore various applications of nanowires11–15. However, despite advances in nanowire synthesis, progress towards the ab initio design and growth of hierarchical nanostructures has been limited. Here we demonstrate a ‘nanotectonic’ approach that provides iterative control over the nucleation and growth of nanowires and use it to grow kinked or zigzag nanowires in which the straight sections are separated by triangular joints. Moreover, the lengths of the straight sections can be controlled and the growth direction remains coherent along the nanowire. We also grow dopant-modulated structures in which specific device functions, including p-n diodes and field-effect transistors, can be precisely localized at the kinked junctions in the nanowires. PMID:19893521

  13. Investigation of maximum optical enhancement in single gold nanowires and triple nanowire arrays

    NASA Astrophysics Data System (ADS)

    Saylor, Cameron; Novak, Eric; Debu, Desalegn; Herzog, Joseph B.

    2015-01-01

    This work thoroughly investigates gold nanowires with various cross-sectional geometries and patterns. The study has determined the effect of the cross section aspect ratio on its maximum optical enhancement. The plasmonic optical enhancement properties of single gold nanowires and an array of three nanowires were investigated using finite element method simulations. The results indicate a significant dependence of the optical enhancement on both the thickness and width of the nanowires. From the simulation data, an equation for each geometry (single and triple array) was found that relates the dimensions and incident wavelength to the optical enhancement. These relationships can be a valuable resource while designing nanowires to optimize the dimensions and provide the maximum possible optical enhancement.

  14. A single crystalline InP nanowire photodetector

    NASA Astrophysics Data System (ADS)

    Yan, Xin; Li, Bang; Wu, Yao; Zhang, Xia; Ren, Xiaomin

    2016-08-01

    Single crystalline nanowires are critical for achieving high-responsivity, high-speed, and low-noise nanoscale photodetectors. Here, we report a metal-semiconductor-metal photodetector based on a single crystalline InP nanowire. The nanowires are grown by a self-catalyzed method and exhibit stacking-fault-free zinc blende crystal structure. The nanowire exhibits a typical n-type semiconductor property and shows a low room temperature dark current of several hundred pA at moderate biases. A photoresponsivity of 6.8 A/W is obtained at a laser power density of 0.2 mW/cm2. This work demonstrates that single crystalline InP nanowires are good candidates for future optoelectronic device applications.

  15. Single-Nanowire Strain Sensors Fabricated by Nanoskiving.

    PubMed

    Jibril, Liban; Ramírez, Julián; Zaretski, Aliaksandr V; Lipomi, Darren J

    2017-08-15

    This article describes the fabrication of single-nanowire strain sensors by thin sectioning of gold films with an ultramicrotome-i.e., "nanoskiving." The nanowire sensors are transferred to various substrates from the water bath on which they float after sectioning. The electrical response of these single nanowires to mechanical strain is investigated, with the lowest detectable strain determined to be 1.6 × 10(-5) with a repeatable response to strains as high as 7 × 10(-4). The sensors are shown to have an enhanced sensitivity with a gauge factor of 3.1 on average, but as high as 9.5 in the low strain regime (ε ~ 1 × 10(-5)). Conventional thin films of gold of the same height as the nanowires are used as controls, and are unable to detect those same strains. The practicality of this sensor is investigated by transferring a single nanowire to polyimide tape, and placing the sensor on the wrist to monitor the pulse pressure waveform from the radial artery. The nanowires are fabricated with simple tools and require no lithography. Moreover, the sensors can be "manufactured" efficiently, as each consecutive section of the film is a quasi copy of the previous nanowire. The simple fabrication of these nanowires, along with the compatibility with flexible substrates, offers possibilities in developing new kinds of devices for biomedical applications and structural health monitoring.

  16. Photovoltaic measurements in single-nanowire silicon solar cells.

    PubMed

    Kelzenberg, Michael D; Turner-Evans, Daniel B; Kayes, Brendan M; Filler, Michael A; Putnam, Morgan C; Lewis, Nathan S; Atwater, Harry A

    2008-02-01

    Single-nanowire solar cells were created by forming rectifying junctions in electrically contacted vapor-liquid-solid-grown Si nanowires. The nanowires had diameters in the range of 200 nm to 1.5 microm. Dark and light current-voltage measurements were made under simulated Air Mass 1.5 global illumination. Photovoltaic spectral response measurements were also performed. Scanning photocurrent microscopy indicated that the Si nanowire devices had minority carrier diffusion lengths of approximately 2 microm. Assuming bulk-dominated recombination, this value corresponds to a minimum carrier lifetime of approximately 15 ns, or assuming surface-dominated recombination, to a maximum surface recombination velocity of approximately 1350 cm s(-1). The methods described herein comprise a valuable platform for measuring the properties of semiconductor nanowires, and are expected to be instrumental when designing an efficient macroscopic solar cell based on arrays of such nanostructures.

  17. A diamond nanowire single-photon source.

    PubMed

    Babinec, Thomas M; Hausmann, Birgit J M; Khan, Mughees; Zhang, Yinan; Maze, Jeronimo R; Hemmer, Philip R; Loncar, Marko

    2010-03-01

    The development of a robust light source that emits one photon at a time will allow new technologies such as secure communication through quantum cryptography. Devices based on fluorescent dye molecules, quantum dots and carbon nanotubes have been demonstrated, but none has combined a high single-photon flux with stable, room-temperature operation. Luminescent centres in diamond have recently emerged as a stable alternative, and, in the case of nitrogen-vacancy centres, offer spin quantum bits with optical readout. However, these luminescent centres in bulk diamond crystals have the disadvantage of low photon out-coupling. Here, we demonstrate a single-photon source composed of a nitrogen-vacancy centre in a diamond nanowire, which produces ten times greater flux than bulk diamond devices, while using ten times less power. This result enables a new class of devices for photonic and quantum information processing based on nanostructured diamond, and could have a broader impact in nanoelectromechanical systems, sensing and scanning probe microscopy.

  18. Spatially resolved Hall effect measurement in a single semiconductor nanowire.

    PubMed

    Storm, Kristian; Halvardsson, Filip; Heurlin, Magnus; Lindgren, David; Gustafsson, Anders; Wu, Phillip M; Monemar, Bo; Samuelson, Lars

    2012-11-01

    Efficient light-emitting diodes and photovoltaic energy-harvesting devices are expected to play an important role in the continued efforts towards sustainable global power consumption. Semiconductor nanowires are promising candidates as the active components of both light-emitting diodes and photovoltaic cells, primarily due to the added freedom in device design offered by the nanowire geometry. However, for nanowire-based components to move past the proof-of-concept stage and be implemented in production-grade devices, it is necessary to precisely quantify and control fundamental material properties such as doping and carrier mobility. Unfortunately, the nanoscale geometry that makes nanowires interesting for applications also makes them inherently difficult to characterize. Here, we report a method to carry out Hall measurements on single core-shell nanowires. Our technique allows spatially resolved and quantitative determination of the carrier concentration and mobility of the nanowire shell. As Hall measurements have previously been completely unavailable for nanowires, the experimental platform presented here should facilitate the implementation of nanowires in advanced practical devices.

  19. Study of GaN nanowires converted from β-Ga2O3 and photoconduction in a single nanowire

    NASA Astrophysics Data System (ADS)

    Kumar, Mukesh; Kumar, Sudheer; Chauhan, Neha; Sakthi Kumar, D.; Kumar, Vikram; Singh, R.

    2017-08-01

    The formation of GaN nanowires from β-Ga2O3 nanowires and photoconduction in a fabricated single GaN nanowire device has been studied. Wurtzite phase GaN were formed from monoclinic β-Ga2O3 nanowires with or without catalyst particles at their tips. The formation of faceted nanostructures from catalyst droplets presented on a nanowire tip has been discussed. The nucleation of GaN phases in β-Ga2O3 nanowires and their subsequent growth due to interfacial strain energy has been examined using a high resolution transmission electron microscope. The high quality of the converted GaN nanowire is confirmed by fabricating single nanowire photoconducting devices which showed ultra high responsivity under ultra-violet illumination.

  20. Single cell detection using a magnetic zigzag nanowire biosensor.

    PubMed

    Huang, Hao-Ting; Ger, Tzong-Rong; Lin, Ya-Hui; Wei, Zung-Hang

    2013-08-07

    A magnetic zigzag nanowire device was designed for single cell biosensing. Nanowires with widths of 150, 300, 500, and 800 nm were fabricated on silicon trenches by electron beam lithography, electron beam evaporation, and lift-off processes. Magnetoresistance measurements were performed before and after the attachment of a single magnetic cell to the nanowires to characterize the magnetic signal change due to the influence of the magnetic cell. Magnetoresistance responses were measured in different magnetic field directions, and the results showed that this nanowire device can be used for multi-directional detection. It was observed that the highest switching field variation occurred in a 150 nm wide nanowire when the field was perpendicular to the substrate plane. On the other hand, the highest magnetoresistance ratio variation occurred in a 800 nm wide nanowire also when the field was perpendicular to the substrate plane. Besides, the trench-structured substrate proposed in this study can fix the magnetic cell to the sensor in a fluid environment, and the stray field generated by the corners of the magnetic zigzag nanowires has the function of actively attracting the magnetic cells for detection.

  1. Investigation of factors affecting electrical contacts on single germanium nanowires

    NASA Astrophysics Data System (ADS)

    Sett, Shaili; Das, K.; Raychaudhuri, A. K.

    2017-03-01

    We report an experimental investigation of the quality of electrical contacts made on single Germanium nanowires (grown using Au catalyst from vapor) using Cr/Au contact pads. The nanowires are single crystalline and have a thin layer of oxide on them. We find that a low specific contact resistivity of 10-6 Ω cm2 can be obtained in nanowires with low resistance and the contact resistance enhances almost linearly with the nanowire resistivity. The metal semiconductor junction shows an ideality factor close to unity. A low barrier height of 0.15 eV can be obtained in nanowires of lower resistivities which increase to nearly 0.3 eV for nanowires of higher resistivity. The experiments were carried down to 10 K, and junction characteristics as a function of temperature were evaluated. The specific contact resistance increases on cooling but the barrier shows suppression as the nanowire is cooled, along with an enhancement of the ideality factor. We analyze the temperature dependence of these parameters using a model that assumes a Gaussian distribution of barrier heights in the contact region. The temperature dependence predicted by the model was observed, and the relevant parameters were obtained from the data.

  2. Ultrafast transient absorption studies of single metal and semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Hartland, Gregory V.; Carey, Christopher R.; Staleva, Hristina

    2010-02-01

    Single particle transient absorption experiments have been used to study metallic and semiconducting nanowires. For the metal wires the major result is the observation of modulations in the transient absorption traces due to coherently excited breathing modes. The vibrational periods depend on the dimensions of the nanowire, and the decay times are sensitive to the environment. The nanowires in our experiments are spin coated from a polymer solution onto a glass substrate, and experience a range of different environments. This causes large variations in the quality factor of the breathing mode for different wires. Semiconducting nanowires of CdTe and CdSe were also examined. The CdTe wires show fast picosecond time scale dynamics, which are assigned to charge carrier trapping at surface states of the wires. In contrast, CdSe nanowires show no dynamics on the time scale of our measurements. For the CdTe nanowires the charge carrier trapping times vary from wire-to-wire, and also vary with position in a single wire. This is attributed to differences in surface chemistry. Overall these experiments illustrate the important of single particle techniques for studying nanomaterials, especially for elucidating how differences in local environment and structure affect dynamics.

  3. Athermal avalanche in bilayer superconducting nanowire single-photon detectors

    SciTech Connect

    Verma, V. B. Lita, A. E.; Stevens, M. J.; Mirin, R. P.; Nam, S. W.

    2016-03-28

    We demonstrate that two superconducting nanowires separated by a thin insulating barrier can undergo an avalanche process. In this process, Joule heating caused by a photodetection event in one nanowire and the associated production of athermal phonons which are transmitted through the barrier cause the transition of the adjacent nanowire from the superconducting to the normal state. We show that this process can be utilized in the fabrication of superconducting nanowire single photon detectors to improve the signal-to-noise ratio, reduce system jitter, maximize device area, and increase the external efficiency over a very broad range of wavelengths. Furthermore, the avalanche mechanism may provide a path towards a superconducting logic element based on athermal gating.

  4. Anomalous high capacitance in a coaxial single nanowire capacitor.

    PubMed

    Liu, Zheng; Zhan, Yongjie; Shi, Gang; Moldovan, Simona; Gharbi, Mohamed; Song, Li; Ma, Lulu; Gao, Wei; Huang, Jiaqi; Vajtai, Robert; Banhart, Florian; Sharma, Pradeep; Lou, Jun; Ajayan, Pulickel M

    2012-06-06

    Building entire multiple-component devices on single nanowires is a promising strategy for miniaturizing electronic applications. Here we demonstrate a single nanowire capacitor with a coaxial asymmetric Cu-Cu(2)O-C structure, fabricated using a two-step chemical reaction and vapour deposition method. The capacitance measured from a single nanowire device corresponds to ~140 μF cm(-2), exceeding previous reported values for metal-insulator-metal micro-capacitors and is more than one order of magnitude higher than what is predicted by classical electrostatics. Quantum mechanical calculations indicate that this unusually high capacitance may be attributed to a negative quantum capacitance of the dielectric-metal interface, enhanced significantly at the nanoscale.

  5. Field emission properties of single crystal chromium disilicide nanowires

    SciTech Connect

    Valentin, L. A.; Carpena-Nunez, J.; Yang, D.; Fonseca, L. F.

    2013-01-07

    The composition, crystal structure, and field emission properties of high-crystallinity chromium disilicide (CrSi{sub 2}) nanowires synthesized by a vapor deposition method have been studied. High resolution transmission electron microscopy, energy dispersive spectroscopy, and selected area electron diffraction studies confirm the single-crystalline structure and composition of the CrSi{sub 2} nanowires. Field emission measurements show that an emission current density of 0.1 {mu}A/cm{sup 2} was obtained at a turn-on electric field intensity of 2.80 V/{mu}m. The maximum emission current measured was 1.86 mA/cm{sup 2} at 3.6 V/{mu}m. The relation between the emission current density and the electric field obtained follows the Fowler-Nordheim equation, with an enhancement coefficient of 1140. The electrical conductivity of single nanowires was measured by using four-point-probe specialized microdevices at different temperatures, and the calculated values are close to those reported in previous studies for highly conductive single crystal bulk CrSi{sub 2}. The thermal tolerance of the nanowires was studied up to a temperature of 1100 Degree-Sign C. The stability of the field emission current, the I-E values, their thermal tolerance, and high electrical conductivity make CrSi{sub 2} nanowires a promising material for field emission applications.

  6. Waveguide-Coupled Superconducting Nanowire Single-Photon Detectors

    NASA Technical Reports Server (NTRS)

    Beyer, Andrew D.; Briggs, Ryan M.; Marsili, Francesco; Cohen, Justin D.; Meenehan, Sean M.; Painter, Oskar J.; Shaw, Matthew D.

    2015-01-01

    We have demonstrated WSi-based superconducting nanowire single-photon detectors coupled to SiNx waveguides with integrated ring resonators. This photonics platform enables the implementation of robust and efficient photon-counting detectors with fine spectral resolution near 1550 nm.

  7. Waveguide-Coupled Superconducting Nanowire Single-Photon Detectors

    NASA Technical Reports Server (NTRS)

    Beyer, Andrew D.; Briggs, Ryan M.; Marsili, Francesco; Cohen, Justin D.; Meenehan, Sean M.; Painter, Oskar J.; Shaw, Matthew D.

    2015-01-01

    We have demonstrated WSi-based superconducting nanowire single-photon detectors coupled to SiNx waveguides with integrated ring resonators. This photonics platform enables the implementation of robust and efficient photon-counting detectors with fine spectral resolution near 1550 nm.

  8. ZnO single nanowire-based UV detectors

    NASA Astrophysics Data System (ADS)

    Das, Sachindra Nath; Moon, Kyeong-Ju; Kar, Jyoti Prakash; Choi, Ji-Hyuk; Xiong, Junjie; Lee, Tae Il; Myoung, Jae-Min

    2010-07-01

    In this report, ZnO single nanowire (NW)-based devices were fabricated on the same nanowire by e-beam lithography so that both sides had Ohmic contact and one side had Schottky contact. Information about the mechanism for low-power UV detection by these devices was unambiguously provided by I-V measurements. Adsorption and desorption of oxygen molecules at the NW surface are responsible for the UV detection by the device with Ohmic contacts on both sides. Barrier height modulations and interface states are responsible for UV detection by the device with Schottky contact on one side.

  9. Direct Photonic-Plasmonic Coupling and Routing in Single Nanowires

    SciTech Connect

    Yan, Rouxue; Pausauskie, Peter; Huang, Jiaxing; Yang, Piedong

    2009-10-20

    Metallic nanoscale structures are capable of supporting surface plasmon polaritons (SPPs), propagating collective electron oscillations with tight spatial confinement at the metal surface. SPPs represent one of the most promising structures to beat the diffraction limit imposed by conventional dielectric optics. Ag nano wires have drawn increasing research attention due to 2D sub-100 nm mode confinement and lower losses as compared with fabricated metal structures. However, rational and versatile integration of Ag nanowires with other active and passive optical components, as well as Ag nanowire based optical routing networks, has yet to be achieved. Here, we demonstrate that SPPs can be excited simply by contacting a silver nanowire with a SnO2 nanoribbon that serves both as an unpolarized light source and a dielectric waveguide. The efficient coupling makes it possible to measure the propagation-distance-dependent waveguide spectra and frequency-dependent propagation length on a single Ag nanowire. Furthermore, we have demonstrated prototypical photonic-plasmonic routing devices, which are essential for incorporating low-loss Ag nanowire waveguides as practical components into high-capacity photonic circuits.

  10. Unveiling the Formation Pathway of Single Crystalline Porous Silicon Nanowires

    PubMed Central

    Zhong, Xing; Qu, Yongquan; Lin, Yung-Chen; Liao, Lei; Duan, Xiangfeng

    2011-01-01

    Porous silicon nanowire is emerging as an interesting material system due to its unique combination of structural, chemical, electronic, and optical properties. To fully understand their formation mechanism is of great importance for controlling the fundamental physical properties and enabling potential applications. Here we present a systematic study to elucidate the mechanism responsible for the formation of porous silicon nanowires in a two-step silver-assisted electroless chemical etching method. It is shown that silicon nanowire arrays with various porosities can be prepared by varying multiple experimental parameters such as the resistivity of the starting silicon wafer, the concentration of oxidant (H2O2) and the amount of silver catalyst. Our study shows a consistent trend that the porosity increases with the increasing wafer conductivity (dopant concentration) and oxidant (H2O2) concentration. We further demonstrate that silver ions, formed by the oxidation of silver, can diffuse upwards and re-nucleate on the sidewalls of nanowires to initiate new etching pathways to produce porous structure. The elucidation of this fundamental formation mechanism opens a rational pathway to the production of wafer-scale single crystalline porous silicon nanowires with tunable surface areas ranging from 370 m2·g−1 to 30 m2·g−1, and can enable exciting opportunities in catalysis, energy harvesting, conversion, storage, as well as biomedical imaging and therapy. PMID:21244020

  11. Unveiling the formation pathway of single crystalline porous silicon nanowires.

    PubMed

    Zhong, Xing; Qu, Yongquan; Lin, Yung-Chen; Liao, Lei; Duan, Xiangfeng

    2011-02-01

    Porous silicon nanowire is emerging as an interesting material system due to its unique combination of structural, chemical, electronic, and optical properties. To fully understand their formation mechanism is of great importance for controlling the fundamental physical properties and enabling potential applications. Here we present a systematic study to elucidate the mechanism responsible for the formation of porous silicon nanowires in a two-step silver-assisted electroless chemical etching method. It is shown that silicon nanowire arrays with various porosities can be prepared by varying multiple experimental parameters such as the resistivity of the starting silicon wafer, the concentration of oxidant (H(2)O(2)) and the amount of silver catalyst. Our study shows a consistent trend that the porosity increases with the increasing wafer conductivity (dopant concentration) and oxidant (H(2)O(2)) concentration. We further demonstrate that silver ions, formed by the oxidation of silver, can diffuse upwards and renucleate on the sidewalls of nanowires to initiate new etching pathways to produce a porous structure. The elucidation of this fundamental formation mechanism opens a rational pathway to the production of wafer-scale single crystalline porous silicon nanowires with tunable surface areas ranging from 370 to 30 m(2) g(-1) and can enable exciting opportunities in catalysis, energy harvesting, conversion, storage, as well as biomedical imaging and therapy.

  12. Single crystalline molybdenum nanowires, nanowire arrays and nanopore arrays in nickel-aluminium.

    PubMed

    Milenkovic, Srdjan; Smith, Andrew Jonathan; Hassel, Achim Walter

    2009-06-01

    This work describes a novel fabrication method of single crystalline Mo nanowires and nanowire arrays. The method utilizes directional solidification (ds) of a NiAl-Mo eutectic alloy and its subsequent electrochemical processing. In the first step, a self-organized array of Mo nanowires embedded in a NiAl matrix is obtained. By combining the Pourbaix diagrams of the three elements involved, a strategy for selective removal of either of the two phases is derived. An oxidizing acidic solution of pH 0.2 dissolved the matrix and released an array of long and uniform Mo wires. Even a complete extraction of the wires is possible through entire dissolution of the matrix. On the other hand, electrodissolution of the Mo with a simultaneous passivation of the NiAl matrix at the pH 6 and the potential of 200 mV SHE yielded nanopore arrays with rectangular pores. This method has several advantages. First of all, it is one of the few top-down methods that allow the production of large amounts of nanostructures. In addition, both the wires and the matrix are single crystalline which makes them favorable for various applications. Further, the obtained nanostructures exhibit extremely high aspect ratios (> 1000), unreachable by most other techniques. This technique has the potential for the production of nanowire arrays either for employment in sensors or in field emission.

  13. Dry-growth of silver single-crystal nanowires from porous Ag structure

    SciTech Connect

    Chen, Chuantong Nagao, Shijo; Jiu, Jinting; Zhang, Hao; Sugahara, Tohru; Suganuma, Katsuaki

    2016-06-27

    A fabrication method of single crystal Ag nanowires in large scale is introduced without any chemical synthesis in wet processes, which usually generates fivefold twinned nanowires of fcc metals. Dense single-crystal nanowires grow on a mechanically polished surface of micro-porous Ag structure, which is created from Ag micro-particles. The diameter and the length of the nanowires can be controlled simply by changing the temperature and the time of the heating during the nanowire growth in air. Unique growth mechanism is described in detail, based on stress-induced migration accelerated by the micro-porous structure where the origin of Ag nanowires growth is incubated. Transmission electron microscopy analysis on the single crystal nanowires is also presented. This simple method offered an alternative preparation for metallic nanowires, especially with the single crystal structure in numerous applications.

  14. Single GaAs/GaAsP coaxial core-shell nanowire lasers.

    PubMed

    Hua, Bin; Motohisa, Junichi; Kobayashi, Yasunori; Hara, Shinjiroh; Fukui, Takashi

    2009-01-01

    Highly uniform GaAs/GaAsP coaxial nanowires were prepared via selective-area metal organic vapor phase epitaxy. Photoluminescence spectra from a single nanowire indicate that the obtained heterostructures can produce near-infrared (NIR) lasing under pulsed light excitation. The end facets of a single nanowire form a natural mirror surface to create an axial cavity, which realizes resonance and give stimulated emission. This study is a considerable advance toward the realization of nanowire-based NIR light sources.

  15. ``Hot spots'' growth on single nanowire controlled by electric charge

    NASA Astrophysics Data System (ADS)

    Xi, Shaobo; Liu, Xuehua; He, Ting; Tian, Lei; Wang, Wenhui; Sun, Rui; He, Weina; Zhang, Xuetong; Zhang, Jinping; Ni, Weihai; Zhou, Xiaochun

    2016-06-01

    ``Hot spots'' - a kind of highly active site, which are usually composed of some unique units, such as defects, interfaces, catalyst particles or special structures - can determine the performance of nanomaterials. In this paper, we study a model system, i.e. ``hot spots'' on a single Ag nanowire in the galvanic replacement reaction (GRR), by dark-field microscopy. The research reveals that electric charge can be released by the formation reaction of AgCl, and consequently the electrochemical potential on Ag nanowire drops. The electric charge could induce the reduction of Ag+ to form the ``hot spots'' on the nanowire during the GRR. The appearance probability of ``hot spots'' is almost even along the Ag nanowire, while it is slightly lower near the two ends. The spatial distance between adjacent ``hot spots'' is also controlled by the charge, and obeys a model based on Boltzmann distribution. In addition, the distance distribution here has an advantage in electron transfer and energy saving. Therefore, it's necessary to consider the functions of electric charge during the synthesis or application of nanomaterials.``Hot spots'' - a kind of highly active site, which are usually composed of some unique units, such as defects, interfaces, catalyst particles or special structures - can determine the performance of nanomaterials. In this paper, we study a model system, i.e. ``hot spots'' on a single Ag nanowire in the galvanic replacement reaction (GRR), by dark-field microscopy. The research reveals that electric charge can be released by the formation reaction of AgCl, and consequently the electrochemical potential on Ag nanowire drops. The electric charge could induce the reduction of Ag+ to form the ``hot spots'' on the nanowire during the GRR. The appearance probability of ``hot spots'' is almost even along the Ag nanowire, while it is slightly lower near the two ends. The spatial distance between adjacent ``hot spots'' is also controlled by the charge, and obeys a

  16. Single crystalline Ge(1-x)Mn(x) nanowires as building blocks for nanoelectronics.

    PubMed

    van der Meulen, Machteld I; Petkov, Nikolay; Morris, Michael A; Kazakova, Olga; Han, Xinhai; Wang, Kang L; Jacob, Ajey P; Holmes, Justin D

    2009-01-01

    Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5-1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm(2)/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.

  17. Laser-induced single point nanowelding of silver nanowires

    NASA Astrophysics Data System (ADS)

    Dai, Shuowei; Li, Qiang; Liu, Guoping; Yang, Hangbo; Yang, Yuanqing; Zhao, Ding; Wang, Wei; Qiu, Min

    2016-03-01

    Nanowelding of nanomaterials opens up an emerging set of applications in transparent conductors, thin-film solar cells, nanocatalysis, cancer therapy, and nanoscale patterning. Single point nanowelding (SPNW) is highly demanded for building complex nanostructures. In this letter, the precise control of SPNW of silver nanowires is explored in depth, where the nanowelding is laser-induced through the plasmonic resonance enhanced photothermal effect. It is shown that the illumination position is a critical factor for the nanowelding process. As an example of performance enhancement, output at wire end can be increased by 65% after welding for a plasmonic nanocoupler. Thus, single point nanowelding technique shows great potentials for high-performance electronic and photonic devices based on nanowires, such as nanoelectronic circuits and plasmonic nanodevices.

  18. Laser-induced single point nanowelding of silver nanowires

    SciTech Connect

    Dai, Shuowei; Li, Qiang Liu, Guoping; Yang, Hangbo; Yang, Yuanqing; Zhao, Ding; Wang, Wei; Qiu, Min

    2016-03-21

    Nanowelding of nanomaterials opens up an emerging set of applications in transparent conductors, thin-film solar cells, nanocatalysis, cancer therapy, and nanoscale patterning. Single point nanowelding (SPNW) is highly demanded for building complex nanostructures. In this letter, the precise control of SPNW of silver nanowires is explored in depth, where the nanowelding is laser-induced through the plasmonic resonance enhanced photothermal effect. It is shown that the illumination position is a critical factor for the nanowelding process. As an example of performance enhancement, output at wire end can be increased by 65% after welding for a plasmonic nanocoupler. Thus, single point nanowelding technique shows great potentials for high-performance electronic and photonic devices based on nanowires, such as nanoelectronic circuits and plasmonic nanodevices.

  19. Imaging Single ZnO Vertical Nanowire Laser Cavities using UV-Laser Scanning Confocal Microscopy

    SciTech Connect

    Gargas, D.J.; Toimil-Molares, M.E.; Yang, P.

    2008-11-17

    We report the fabrication and optical characterization of individual ZnO vertical nanowire laser cavities. Dilute nanowire arrays with interwire spacing>10 ?m were produced by a modified chemical vapor transport (CVT) method yielding an ideal platform for single nanowire imaging and spectroscopy. Lasing characteristics of a single vertical nanowire are presented, as well as high-resolution photoluminescence imaging by UV-laser scanning confocal microscopy. In addition, three-dimensional (3D) mapping of the photoluminescence emission performed in both planar and vertical dimensions demonstrates height-selective imaging useful for vertical nanowires and heteronanostructures emerging in the field of optoelectronics and nanophotonics.

  20. Magnetic properties of single crystalline Co nanowire arrays with different diameters and orientations

    NASA Astrophysics Data System (ADS)

    Huang, X. H.; Li, G. H.; Dou, X. C.; Li, L.

    2009-04-01

    Single crystalline Co nanowire arrays with different diameters and orientations were grown within porous anodic alumina membranes by a pulsed electrodeposition technique and the magnetic properties of the nanowire were systematically studied. It was found that the magnetization behavior of the Co nanowire arrays is anisotropic and their magnetic properties can be effectively modulated through tuning either the diameter or the orientation of the nanowires. The magnetic properties of the Co nanowires were discussed qualitatively by using the classical magnetization theory and single domain model.

  1. Observation of plastic deformation in freestanding single crystal Au nanowires

    SciTech Connect

    Lee, Dongyun; Zhao Manhong; Wei Xiaoding; Chen Xi; Jun, Seong C.; Hone, James; Herbert, Erik G.; Oliver, Warren C.; Kysar, Jeffrey W.

    2006-09-11

    Freestanding single crystal nanowires of gold were fabricated from a single grain of pure gold leaf by standard lithographic techniques, with center section of 7 {mu}m in length, 250 nm in width, and 100 nm in thickness. The ends remained anchored to a silicon substrate. The specimens were deflected via nanoindenter until plastic deformation was achieved. Nonlocalized and localized plastic deformations were observed. The resulting force-displacement curves were simulated using continuum single crystal plasticity. A set of material parameters which closely reproduce the experimental results suggests that the initial critical resolved shear stress was as high as 135 MPa.

  2. Polymorph-tuned synthesis of α- and β-Bi2O3 nanowires and determination of their growth direction from polarized Raman single nanowire microscopy.

    PubMed

    In, Juneho; Yoon, Ilsun; Seo, Kwanyong; Park, Jeunghee; Choo, Jaebum; Lee, Yonghoon; Kim, Bongsoo

    2011-01-24

    We report polymorph-tuned synthesis of α- and β-Bi(2)O(3) nanowires and their single nanowire micro-Raman study. The single crystalline Bi(2)O(3) nanowires in different phases (α and β) were selectively synthesized by adjusting the heating temperature of Bi precursor in a vapor transport process. No catalyst was employed. Furthermore, at an identical precursor evaporation temperature, α- and β- phase Bi(2)O(3) nanowires were simultaneously synthesized along the temperature gradient at a substrate. The growth direction of α-Bi(2)O(3) nanowires was revealed by polarized Raman single nanowire spectra. For thin β-Bi(2)O(3) nanowires with a very small diameter, the polarized Raman single nanowire spectrum was strongly influenced by the shape effect.

  3. Field emission from single-crystalline HfC nanowires

    SciTech Connect

    Yuan, Jinshi; Tang, Jie; Zhang Han; Shinya, Norio; Nakajima, Kiyomi; Qin, Lu-Chang

    2012-03-12

    Single HfC nanowire field emitter/electrode structures have been fabricated using nano-assembling and electron beam induced deposition. Field ion microscopy has been applied to study the atomic arrangement of facets formed on a field evaporation-modified HfC nanowire tip. Field evaporation and crystal form studies suggest that the {l_brace}111{r_brace} and {l_brace}110{r_brace} crystal planes have lower work functions, while the {l_brace}100{r_brace}, {l_brace}210{r_brace}, and {l_brace}311{r_brace} planes have higher work functions. Field emission measurement permits us to obtain that the work function of the {l_brace}111{r_brace} crystal plane is about 3.4 eV.

  4. Thermal Conductivity of ZnO Single Nanowire.

    PubMed

    Yuldashev, Sh U; Yalishev, V Sh; Cho, H D; Kang, T W

    2016-02-01

    The thermal conductivity of a single ZnO nanowire with diameter of ~150 nm was measured using a four-point-probe 3omega method over a temperature range of 140-300 K. The measured ther- mal conductivity of ZnO nanowire is strongly reduced compared to bulk ZnO crystal due to the enhanced phonon-boundary and impurity (isotope) scattering. The maximum of the thermal conductivity is shifted to a higher temperature than that of bulk counterpart. Temperature dependent measurements show that beyond the low-temperature maximum, the thermal conductivity decreases with temperature as T(-1.5) indicating strong impurity (isotope) scattering at intermediate and high temperatures.

  5. Miniaturized ionization gas sensors from single metal oxide nanowires.

    PubMed

    Hernandez-Ramirez, Francisco; Prades, Juan Daniel; Hackner, Angelika; Fischer, Thomas; Mueller, Gerhard; Mathur, Sanjay; Morante, Joan Ramon

    2011-02-01

    Gas detection experiments were performed with individual tin dioxide (SnO2) nanowires specifically configured to observe surface ion (SI) emission response towards representative analyte species. These devices were found to work at much lower temperatures (T≈280 °C) and bias voltages (V≈2 V) than their micro-counterparts, thereby demonstrating the inherent potential of individual nanostructures in building functional nanodevices. High selectivity of our miniaturized sensors emerges from the dissimilar sensing mechanisms of those typical of standard resistive-type sensors (RES). Therefore, by employing this detection principle (SI) together with RES measurements, better selectivity than that observed in standard metal oxide sensors could be demonstrated. Simplicity and specificity of the gas detection as well as low-power consumption make these single nanowire devices promising technological alternatives to overcome the major drawbacks of solid-state sensor technologies.

  6. Co nanoparticle hybridization with single-crystalline Bi nanowires

    NASA Astrophysics Data System (ADS)

    Noh, Jin-Seo; Lee, Min-Kyung; Ham, Jinhee; Lee, Wooyoung

    2011-11-01

    Crystalline Co nanoparticles were hybridized with single-crystalline Bi nanowires simply by annealing Co-coated Bi nanowires at elevated temperatures. An initially near-amorphous Co film of 2-7 nm in thickness began to disrupt its morphology and to be locally transformed into crystallites in the early stage of annealing. The Co film became discontinuous after prolonged annealing, finally leading to isolated, crystalline Co nanoparticles of 8-27 nm in size. This process spontaneously proceeds to reduce the high surface tension and total energy of Co film. The annealing time required for Co nanoparticle formation decreased as annealing temperature increased, reflecting that this transformation occurs by the diffusional flow of Co atoms. The Co nanoparticle formation process was explained by a hole agglomeration and growth mechanism, which is similar to the model suggested by Brandon and Bradshaw, followed by the nanoparticle refinement.

  7. Single-Crystal Diamond Nanowire Tips for Ultrasensitive Force Microscopy.

    PubMed

    Tao, Y; Degen, C L

    2015-12-09

    We report the fabrication, integration, and assessment of sharp diamond tips for ultrasensitive force microscopy experiments. Two types of tips, corresponding to the upper and lower halves of a diamond nanowire, were fabricated by top-down plasma etching from a single-crystalline substrate. The lower, surface-attached halves can be directly integrated into lithographically defined nanostructures, like cantilevers. The upper, detachable halves result in diamond nanowires with a tunable diameter (50-500 nm) and lengths of a few microns. Tip radii were around 10 nm and tip apex angles around 15°. We demonstrate the integration of diamond nanowires for use as scanning tips onto ultrasensitive pendulum-style silicon cantilevers. We find the noncontact friction and frequency jitter to be exceptionally low, with no degradation in the intrinsic mechanical quality factor (Q ≈ 130,000) down to tip-to-surface distances of about 10 nm. Our results are an encouraging step toward further improvement of the sensitivity and resolution of force-detected magnetic resonance imaging.

  8. SbSI Nanosensors: from Gel to Single Nanowire Devices

    NASA Astrophysics Data System (ADS)

    Mistewicz, Krystian; Nowak, Marian; Paszkiewicz, Regina; Guiseppi-Elie, Anthony

    2017-02-01

    The gas-sensing properties of antimony sulfoiodide (SbSI) nanosensors have been tested for humidity and carbon dioxide in nitrogen. The presented low-power SbSI nanosensors have operated at relatively low temperature and have not required heating system for recovery. Functionality of sonochemically prepared SbSI nanosensors made of xerogel as well as single nanowires has been compared. In the latter case, small amount of SbSI nanowires has been aligned in electric field and bonded ultrasonically to Au microelectrodes. The current and photocurrent responses of SbSI nanosensors have been investigated as function of relative humidity. Mechanism of light-induced desorption of H2O from SbSI nanowires' surface has been discussed. SbSI nanosensors have been tested for concentrations from 51 to 106 ppm of CO2 in N2, exhibiting a low detection limit of 40(31) ppm. The current response sensitivity has shown a tendency to decrease with increasing CO2 concentration. The experimental results have been explained taking into account proton-transfer process and Grotthuss' chain reaction, as well as electronic theory of adsorption and catalysis on semiconductors.

  9. SbSI Nanosensors: from Gel to Single Nanowire Devices.

    PubMed

    Mistewicz, Krystian; Nowak, Marian; Paszkiewicz, Regina; Guiseppi-Elie, Anthony

    2017-12-01

    The gas-sensing properties of antimony sulfoiodide (SbSI) nanosensors have been tested for humidity and carbon dioxide in nitrogen. The presented low-power SbSI nanosensors have operated at relatively low temperature and have not required heating system for recovery. Functionality of sonochemically prepared SbSI nanosensors made of xerogel as well as single nanowires has been compared. In the latter case, small amount of SbSI nanowires has been aligned in electric field and bonded ultrasonically to Au microelectrodes. The current and photocurrent responses of SbSI nanosensors have been investigated as function of relative humidity. Mechanism of light-induced desorption of H2O from SbSI nanowires' surface has been discussed. SbSI nanosensors have been tested for concentrations from 51 to 10(6) ppm of CO2 in N2, exhibiting a low detection limit of 40(31) ppm. The current response sensitivity has shown a tendency to decrease with increasing CO2 concentration. The experimental results have been explained taking into account proton-transfer process and Grotthuss' chain reaction, as well as electronic theory of adsorption and catalysis on semiconductors.

  10. Fano fluctuations in superconducting-nanowire single-photon detectors

    NASA Astrophysics Data System (ADS)

    Kozorezov, A. G.; Lambert, C.; Marsili, F.; Stevens, M. J.; Verma, V. B.; Allmaras, J. P.; Shaw, M. D.; Mirin, R. P.; Nam, Sae Woo

    2017-08-01

    Because of their universal nature, Fano fluctuations are expected to influence the response of superconducting-nanowire single-photon detectors (SNSPDs). We predict that photon counting rate (P C R ) as a function of bias current (IB) in SNSPDs is described by an integral over a transverse coordinate-dependent complementary error function. Fano fluctuations in the amount of energy deposited into the electronic system contribute to the finite width of this error function Δ IB . The local response of an SNSPD can also affect this width: the location of the initial photon absorption site across the width of the wire can impact the probability of vortex-antivortex unbinding and vortex entry from the edges. In narrow-nanowire SNSPDs, the local responses are uniform, and Fano fluctuations dominate Δ IB . We demonstrate good agreement between theory and experiments for a series of bath temperatures and photon energies in narrow-wire WSi SNSPDs. In a wide-nanowire device, the strong local dependence will introduce a finite width to the P C R curve, but with sharp cusps. We show how Fano fluctuations can smooth these features to produce theoretical curves that better match experimental data. We also show that the time-resolved hotspot relaxation curves predicted by Fano fluctuations match the previously measured Lorentzian shapes (except for their tails) over the entire range of bias currents investigated experimentally.

  11. Direct electrical transport measurement on a single thermoelectric nanowire embedded in an alumina template.

    PubMed

    Ben Khedim, Meriam; Cagnon, Laurent; Garagnon, Christophe; Serradeil, Valerie; Bourgault, Daniel

    2016-04-28

    Electrical conductivity is a key parameter to increase the performance of thermoelectric materials. However, the measurement of such performance remains complex for 1D structures, involving tedious processing. In this study, we present a non-destructive, rapid and easy approach for the characterization of electrical conductivity of Bi2Te3 based single nanowires. By controlling the nanowire overgrowth, each nanowire emerges in the form of a micrometric hemisphere constituting a unique contact zone for direct nanoprobing. As nanowires need no preliminary preparation and remain in their template during measurement, we avoid oxidation effects and time-consuming processing. Electrical transport results show a low nanowire resistivity for compact nanowires obtained at low overpotential. Such values are comparable to bulk materials and thin films. This method not only confirmed its reliability, but it could also be adopted for other semiconducting or metallic electrodeposited nanowires.

  12. Electrical properties of single CuO nanowires for device fabrication: Diodes and field effect transistors

    SciTech Connect

    Florica, Camelia; Costas, Andreea; Boni, Andra Georgia; Negrea, Raluca; Preda, Nicoleta E-mail: encu@infim.ro; Pintilie, Lucian; Enculescu, Ionut E-mail: encu@infim.ro; Ion, Lucian

    2015-06-01

    High aspect ratio CuO nanowires are synthesized by a simple and scalable method, thermal oxidation in air. The structural, morphological, optical, and electrical properties of the semiconducting nanowires were studied. Au-Ti/CuO nanowire and Pt/CuO nanowire electrical contacts were investigated. A dominant Schottky mechanism was evidenced in the Au-Ti/CuO nanowire junction and an ohmic behavior was observed for the Pt/CuO nanowire junction. The Pt/CuO nanowire/Pt structure allows the measurements of the intrinsic transport properties of the single CuO nanowires. It was found that an activation mechanism describes the behavior at higher temperatures, while a nearest neighbor hopping transport mechanism is characteristic at low temperatures. This was also confirmed by four-probe resistivity measurements on the single CuO nanowires. By changing the metal/semiconductor interface, devices such as Schottky diodes and field effect transistors based on single CuO p-type nanowire semiconductor channel are obtained. These devices are suitable for being used in various electronic circuits where their size related properties can be exploited.

  13. Optimised quantum hacking of superconducting nanowire single-photon detectors

    NASA Astrophysics Data System (ADS)

    Tanner, Michael G.; Makarov, Vadim; Hadfield, Robert H.

    2014-03-01

    We explore bright-light control of superconducting nanowire single-photon detectors (SNSPDs) in the shunted configuration (a practical measure to avoid latching). In an experiment, we simulate an illumination pattern the SNSPD would receive in a typical quantum key distribution system under hacking attack. We show that it effectively blinds and controls the SNSPD. The transient blinding illumination lasts for a fraction of a microsecond and produces several deterministic fake clicks during this time. This attack does not lead to elevated timing jitter in the spoofed output pulse, and hence does not introduce significant errors. Five different SNSPD chip designs were tested. We consider possible countermeasures to this attack.

  14. Optimised quantum hacking of superconducting nanowire single-photon detectors.

    PubMed

    Tanner, Michael G; Makarov, Vadim; Hadfield, Robert H

    2014-03-24

    We explore bright-light control of superconducting nanowire single-photon detectors (SNSPDs) in the shunted configuration (a practical measure to avoid latching). In an experiment, we simulate an illumination pattern the SNSPD would receive in a typical quantum key distribution system under hacking attack. We show that it effectively blinds and controls the SNSPD. The transient blinding illumination lasts for a fraction of a microsecond and produces several deterministic fake clicks during this time. This attack does not lead to elevated timing jitter in the spoofed output pulse, and hence does not introduce significant errors. Five different SNSPD chip designs were tested. We consider possible countermeasures to this attack.

  15. Fabrication of single crystalline, uniaxial single domain Co nanowire arrays with high coercivity

    NASA Astrophysics Data System (ADS)

    Ramazani, A.; Almasi Kashi, M.; Montazer, A. H.

    2014-03-01

    Whilst Co nanorods with high coercivity were synthesized during recent years, they did not achieve the same results as for Co nanowires embedded in solid templates. In the present work, Co nanowire arrays (NWAs) with high coercivity were successfully fabricated in porous aluminum oxide template under optimum conditions by using pulsed ac electrodeposition technique. Magnetic properties and crystalline characteristics of the nanowires were investigated by hysteresis loop measurements, first-order reversal curve (FORC) analysis, X-ray diffraction (XRD), and selected area electron diffraction (SAED) patterns. Hysteresis loop measurements showed high coercivity of about 4.8 kOe at room temperature together with optimum squareness of 1, resulting in an increase of the previous maximum coercivity for Co NWAs up to 45%. XRD and SAED patterns revealed a single crystalline texture along the [0002] direction, indicating the large magnetocrystalline anisotropy. On the other hand, FORC analysis confirmed a single domain structure for the Co NWAs. In addition, the reversal mechanism of the single crystalline, single domain Co NWAs was studied which resulted in the fixed easy axis with a coherent rotation. Accordingly, these nanowires might offer promising applications in high density bit patterned media and low power logic devices.

  16. Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

    NASA Astrophysics Data System (ADS)

    Calabrese, Gabriele; Corfdir, Pierre; Gao, Guanhui; Pfüller, Carsten; Trampert, Achim; Brandt, Oliver; Geelhaar, Lutz; Fernández-Garrido, Sergio

    2016-05-01

    We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowires by transmission electron microscopy reveals that they are single crystalline. Low-temperature photoluminescence spectroscopy demonstrates that in comparison to standard GaN nanowires grown on Si, the nanowires prepared on the Ti foil exhibit an equivalent crystalline perfection, a higher density of basal-plane stacking faults, but a reduced density of inversion domain boundaries. The room-temperature photoluminescence spectrum of the nanowire ensemble is not influenced or degraded by the bending of the substrate. The present results pave the way for the fabrication of flexible optoelectronic devices based on GaN nanowires on metal foils.

  17. Single-crystalline zinc oxide nanowires as photoanode material for dye-sensitized solar cells.

    PubMed

    Ho, Shu-Te; Hsiao, Ching-Lun; Lin, Hsin-Yu; Chen, Hsiang-An; Wang, Chiu-Yen; Lin, Heh-Nan

    2010-10-01

    This study reports the use of single-crystalline and well-aligned ZnO nanowires as photoanode material for dye-sensitized solar cells. The ZnO nanowires are grown on fluorine-doped tin oxide coated glass substrates without catalysts by thermal evaporation. In spite of low roughness factors of around 25 for the nanowire photoanodes, the fabricated solar cells yield power conversion efficiencies of around 1.3% under AM 1.5G (100 mW cm-2) illumination. Moreover, fill factors of around 0.5 have been achieved and are relatively high when compared with reported values from ZnO nanowire photoanodes. The results reveal the advantage of using single-crystalline nanowires as photoanode material and provide clues for the advancement of nanowire based dye-sensitized solar cells.

  18. Light-Induced Charge Transport within a Single Asymmetric Nanowire

    SciTech Connect

    Liu, Chong; Hwang, Yun Yeong; Jeong, Hoon Eui; Yang, Peidong

    2011-01-21

    Artificial photosynthetic systems using semiconductor materials have been explored for more than three decades in order to store solar energy in chemical fuels such as hydrogen. By mimicking biological photosynthesis with two light-absorbing centers that relay excited electrons in a nanoscopic space, a dual-band gap photoelectrochemical (PEC) system is expected to have higher theoretical energy conversion efficiency than a single band gap system. This work demonstrates the vectorial charge transport of photo-generated electrons and holes within a single asymmetric Si/TiO2 nanowire using Kelvin probe force microscopy (KPFM). Under UV illumination, higher surface potential was observed on the n-TiO₂ side, relative to the potential of the p-Si side, as a result of majority carriers’ recombination at the Si/TiO₂ interface. These results demonstrate a new approach to investigate charge separation and transport in a PEC system. This asymmetric nanowire heterostructure, with a dual band gap configuration and simultaneously exposed anode and cathode surfaces represents an ideal platform for the development of technologies for the generation of solar fuels, although better photoanode materials remain to be discovered.

  19. Doped niobium superconducting nanowire single-photon detectors

    NASA Astrophysics Data System (ADS)

    Jia, Tao; Kang, Lin; Zhang, Labao; Zhao, Qingyuan; Gu, Min; Qiu, Jian; Chen, Jian; Jin, Biaobing

    2014-09-01

    We designed and fabricated a special doped niobium (Nb*) superconducting nanowire single-photon detector (SNSPD) on MgO substrate. The superconductivity of this ultra-thin Nb* film was further improved by depositing an ultra-thin aluminum nitride protective layer on top. Compared with traditional Nb films, Nb* films present higher T C and J C. We investigated the dependence of the characteristics of devices, such as cut-off wavelength, response bandwidth, and temperature, on their geometrical dimensions. Results indicate that reduction in both the width and thickness of Nb* nanowires extended the cut-off wavelength and improved the sensitivity. The Nb* SNSPD (50 nm width and 4.5 nm thickness) exhibited single-photon sensitivities at 1,310, 1,550, and 2,010 nm. We also demonstrated an enhancement in the detection efficiency by a factor of 10 in its count rate by lowering the working temperature from 2.26 K to 315 mK.

  20. NBN Gene Polymorphisms and Cancer Susceptibility: A Systemic Review

    PubMed Central

    Berardinelli, Francesco; di Masi, Alessandra; Antoccia, Antonio

    2013-01-01

    The relationship between DNA repair failure and cancer is well established as in the case of rare, high penetrant genes in high cancer risk families. Beside this, in the last two decades, several studies have investigated a possible association between low penetrant polymorphic variants in genes devoted to DNA repair pathways and risk for developing cancer. This relationship would be also supported by the observation that DNA repair processes may be modulated by sequence variants in DNA repair genes, leading to susceptibility to environmental carcinogens. In this framework, the aim of this review is to provide the reader with the state of the art on the association between common genetic variants and cancer risk, limiting the attention to single nucleotide polymorphisms (SNPs) of the NBN gene and providing the various odd ratios (ORs). In this respect, the NBN protein, together with MRE11 and RAD50, is part of the MRN complex which is a central player in the very early steps of sensing and processing of DNA double-strand breaks (DSBs), in telomere maintenance, in cell cycle control, and in genomic integrity in general. So far, many papers were devoted to ascertain possible association between common synonymous and non-synonymous NBN gene polymorphisms and increased cancer risk. However, the results still remain inconsistent and inconclusive also in meta-analysis studies for the most investigated E185Q NBN miscoding variant. PMID:24396275

  1. CuInSe2 nanowires from facile chemical transformation of In2Se3 and their integration in single-nanowire devices.

    PubMed

    Schoen, David T; Peng, Hailin; Cui, Yi

    2013-04-23

    Nanowire solar cells are receiving a significant amount of attention for their potential to improve light absorption and charge collection in photovoltaics. Single-nanowire solar cells offer the ability to investigate performance limits for macroscale devices, as well as the opportunity for in-depth structural characterization and property measurement in small working devices. Copper indium selenide (CIS) is a material uniquely suited to these investigations. Not only could nanowire solar cells of CIS perhaps allow efficient macroscale photovoltaics to be fabricated while reducing the amount of CIS required, important for a system with possible resource limitations, but it is also a photovoltaic material for which fundamental understanding has been elusive. We here present a recipe for a scaled up vapor liquid solid based synthesis of CIS nanowires, in-depth material and property correlation of single crystalline CIS nanowires, and the first report of a single CIS nanowire solar cell. The synthesis was accomplished by annealing copper-coated In2Se3 nanowires at a moderate temperature of 350 °C, leading to solid-state reaction forming CIS nanowires. These nanowires are p-type with a resitivity of 6.5 Ωcm. Evidence is observed for a strong diameter dependence on the nanowire transport properties. The single-nanowire solar cells have an open-circuit voltage of 500 mV and a short-circuit current of 2 pA under AM 1.5 illumination.

  2. Temperature Dependence of Electrical and Thermal Conduction in Single Silver Nanowire

    DTIC Science & Technology

    2015-06-02

    SECURITY CLASSIFICATION OF: In this work, the thermal and electrical transport in an individual silver nanowire is characterized down to 35 K for in...resistivity increases by around 4 folds from that of bulk silver. The Debye temperature (151 K) of the silver nanowire is found 36% lower than that (235 K) of...public release; distribution is unlimited. Temperature Dependence of Electrical and Thermal Conduction in Single Silver Nanowire The views, opinions

  3. Nonlinear optical response in single alkaline niobate nanowires.

    PubMed

    Dutto, F; Raillon, C; Schenk, K; Radenovic, A

    2011-06-08

    We have synthesized and characterized three types of perovskite alkaline niobate nanowires: NaNbO(3), KNbO(3), and LiNbO(3) (XNbO(3)). All three types of nanowires exhibit strong nonlinear response. Confocal imaging has been employed to quantitatively compare the efficiency of synthesized nanowires to generate second harmonic signal and to show that LiNbO(3) nanowires exhibit the strongest nonlinear response. We also investigated the polarization response of the second harmonic generation (SHG) signal in all three types of alkaline nanowires for the two geometries tractable by our optical trapping setup. The SHG signal is highly influenced by the nanowire crystallinity and experimental geometry. We also demonstrate for the first time wave-guiding of SHG signal in all three types of alkaline niobate nanowires. By carefully examining nonlinear properties of (XNbO(3)) nanowires we suggest which type of wires are best suited for the given application.

  4. Ion-track based single-channel templates for single-nanowire contacting

    NASA Astrophysics Data System (ADS)

    Chtanko, N.; Toimil-Molares, M. E.; Cornelius, T. W.; Dobrev, D.; Neumann, R.

    2005-07-01

    This work reports a procedure for the fabrication of membranes containing only one single channel with diameter down to 20 nm and with well-defined geometry. Foils of different types of polymer (polyethylene terephthalate (PET) and polycarbonate (PC)) were tested with respect to their suitability as ion-track template for single-nanowire growth. Membranes with one pore were created by the track-etching technique. The pore size was characterized by electrical conductivity measurements in 1 M KCl. Furthermore, we developed also a method for the preparation and electrical contacting of single metallic nanowires. Cylindrical single pores were filled with Bi by electrochemical deposition. The resulting wires, remaining embedded in the polymer foil, are very suitable for measurements of electrical resistance as a function of parameters such as wire diameter and temperature.

  5. Freestanding mesoporous quasi-single-crystalline CO3O4 nanowire arrays.

    PubMed

    Li, Yanguang; Tan, Bing; Wu, Yiying

    2006-11-08

    We report a facile template-free method for the large-area growth of freestanding hollow Co3O4 nanowire arrays on a variety of substrates including transparent conducting glass, Si wafer, and copper foil, et al. These nanowires have the interesting combined properties of mesoporosity and quasi-single-crystallinity. With their high surface area and crystallinity, and their direct growth on conductive substrate, these Co3O4 nanowire arrays will have promising applications in lithium-ion batteries, chemical sensing, and field-emission and electrochromic devices. Using the prepared nanowire arrays as electrode, an electrochemical sensor for hydrogen peroxide sensing has been demonstrated.

  6. Localized ultraviolet photoresponse in single bent ZnO micro/nanowires

    SciTech Connect

    Guo Wen; Yang Ya; Qi Junjie; Zhao Jing; Zhang Yue

    2010-09-27

    The localized ultraviolet photoresponse in single bent ZnO micro/nanowires bridging two Ohmic contacts has been investigated. The ZnO micro/nanowire has a higher photoresponse sensitivity of about 190% at the bent region (bending strain: about 4%) than that at the straight region (about 50%). The rise and decay time constants are almost the same in the straight and bent regions of the ZnO micro/nanowire. A possible mechanism has been proposed and discussed. The bent ZnO micro/nanowires could be potentially useful for fabricating the coupled piezoelectric and optoelectronic nanodevices.

  7. Cold welding of copper nanowires with single-crystalline and twinned structures: A comparison study

    NASA Astrophysics Data System (ADS)

    Huang, Rao; Shao, Gui-Fang; Wen, Yu-Hua

    2016-09-01

    In this article, molecular simulations were adopted to explore the cold welding processes of copper nanowires with both single-crystalline and fivefold twinned structures. It was verified that the twinned nanowires exhibited enhanced strength but lowered elastic limit and ductility. Both nanowires could be successfully welded through rather small loadings, although their stress-strain responses toward compression were different. Meanwhile, more stress was accumulated in the twinned nanowire due to repulsive force of the twin boundaries against the nucleation and motions of dislocations. Moreover, by characterizing the structure evolutions in the welding process, it can be ascertained that perfect atomic order was finally built at the weld region in both nanowires. This comparison study will be of great importance to future mechanical processing of metallic nanowires.

  8. Single-crystalline ZnTe nanowires for application as high-performance green/ultraviolet photodetector.

    PubMed

    Cao, Y L; Liu, Z T; Chen, L M; Tang, Y B; Luo, L B; Jie, J S; Zhang, W J; Lee, S T; Lee, C S

    2011-03-28

    Single-crystalline ZnTe nanowires were prepared by a simple vapor transport and deposition method. Photodetectors of individual ZnTe nanowires were fabricated to study photoconductivity of the nanowires. It was observed the nanowire photodetectors show the highest visible-light photoconductive gains among all reported photodetectors based on 1D nanostructure semiconductors, including CdS, CdSe, ZnSe, etc. The high photosensitivity and relatively fast response speed are attributable to the high crystal quality of the ZnTe nanowires. These results reveal that such single-crystalline ZnTe nanowires are excellent candidates for optoelectronic applications.

  9. A high-temperature single-photon source from nanowire quantum dots.

    PubMed

    Tribu, Adrien; Sallen, Gregory; Aichele, Thomas; André, Régis; Poizat, Jean-Philippe; Bougerol, Catherine; Tatarenko, Serge; Kheng, Kuntheak

    2008-12-01

    We present a high-temperature single-photon source based on a quantum dot inside a nanowire. The nanowires were grown by molecular beam epitaxy in the vapor-liquid-solid growth mode. We utilize a two-step process that allows a thin, defect-free ZnSe nanowire to grow on top of a broader, cone-shaped nanowire. Quantum dots are formed by incorporating a narrow zone of CdSe into the nanowire. We observe intense and highly polarized photoluminescence even from a single emitter. Efficient photon antibunching is observed up to 220 K, while conserving a normalized antibunching dip of at most 36%. This is the highest reported temperature for single-photon emission from a nonblinking quantum-dot source and principally allows compact and cheap operation by using Peltier cooling.

  10. Highly sensitive single polyaniline nanowire biosensor for the detection of immunoglobulin G and myoglobin

    PubMed Central

    Lee, Innam; Luo, Xiliang; Cui, Xinyan Tracy; Yun, Minhee

    2011-01-01

    A single polyaniline (PANI) nanowire-based biosensor was established to detect immunoglobulin G (IgG) and myoglobin (Myo), which is one of the cardiac biomarkers. The single PANI nanowires were fabricated via an electrochemical growth method, in which single nanowires were formed between a pair of patterned electrodes. The single PANI nanowires were functionalized with monoclonal antibodies (mAbs) of IgG or Myo via a surface immobilization method, using 1-ethyl-3-(3-dimethyaminopropyl) carbodiimide (EDC), and N-Hydroxysuccinimde (NHS). The functionalization was then verified by Raman spectroscopy and fluorescence microscopy. The target proteins of IgG and Myo were detected by measuring the conductance change of functionalized single PANI nanowires owing to the capturing of target proteins by mAbs. The detection limit was found to be 3 ng/mL for IgG and 1.4 ng/mL for Myo. No response was observed when single nanowires were exposed to a non-specific protein demonstrating excellent specificity to expected target detection. Together with the fast response time (a few seconds), high sensitivity, and good specificity, this single PANI nanowire-based biosensor shows great promise in the detection of cardiac markers and other proteins. PMID:21269820

  11. Theoretical and experimental investigation on superconducting nanowire single-photon detectors

    NASA Astrophysics Data System (ADS)

    Dai, Yue

    2017-02-01

    Single-photon detectors have been widely used in many vital fields, such as quantum teleportation and quantum computation. Compared with other single-photon detectors, superconducting nanowire single-photon detector exhibits relatively wide response spectrum, low dark count rate and high detection efficiency. The principle of superconducting nanowire single-photon detector is demonstrated, especially on the process of the generation and the diffusion of the hotspot, and the simulation is done to illustrate this process. Many important parameters of superconducting nanowire single-photon detector are measured, such as R-T curve and photon response. Through the analysis of experimental data, the approach to improve the performance of superconducting nanowire single-photon detector is proposed.

  12. Rainbow radiating single-crystal Ag nanowire nanoantenna.

    PubMed

    Kang, Taejoon; Choi, Wonjun; Yoon, Ilsun; Lee, Hyoban; Seo, Min-Kyo; Park, Q-Han; Kim, Bongsoo

    2012-05-09

    Optical antennas interface an object with optical radiation and boost the absorption and emission of light by the objects through the antenna modes. It has been much desired to enhance both excitation and emission processes of the quantum emitters as well as to interface multiwavelength channels for many nano-optical applications. Here we report the experimental implementation of an optical antenna operating in the full visible range via surface plasmon currents induced in a defect-free single-crystalline Ag nanowire (NW). With its atomically flat surface, the long Ag NW reliably establishes multiple plasmonic resonances and produces a unique rainbow antenna radiation in the Fresnel region. Detailed antenna radiation properties, such as radiating near-field patterns and polarization states, were experimentally examined and precisely analyzed by numerical simulations and antenna theory. The multiresonant Ag NW nanoantenna will find superb applications in nano-optical spectroscopy, high-resolution nanoimaging, photovoltaics, and nonlinear signal conversion.

  13. Size dependent mechanical properties of single crystalline nickel nanowires

    NASA Astrophysics Data System (ADS)

    Peng, Cheng; Ganesan, Yogeeswaran; Lu, Yang; Lou, Jun

    2012-03-01

    Using a simple micromechanical device, in situ tensile testing of single crystalline nickel (Ni) nanowires (NWs) with different diameters (100 to 300 nm) and crystalline orientations was performed inside a scanning electron microscope. With the aid of a quantitative nanoindenter and corresponding theoretical analysis, the load applied to the sample and the sample displacement were ascertained from nanoindenter load versus displacement curves so as to obtain engineering stress-strain curves. Limited plasticity and brittle-like fracture modes were evident in the Ni NWs investigated, and the breaking strength values were found to be much higher than that of the bulk material. More important, the critical resolved shear stress was found to increase as the NW diameter decreased, showing strong size dependence. The quantitative experimental results from this work could offer important insights into the origin of the size dependent mechanical behaviors of metals at the nano-scale.

  14. Thermal conductivity of a single Bi0.5Sb1.5Te3 single-crystalline nanowire

    NASA Astrophysics Data System (ADS)

    Li, Liang; Jin, Chiming; Xu, Sichao; Yang, Jiyong; Du, Haifeng; Li, Guanghai

    2014-10-01

    Single-crystalline Bi0.5Sb1.5Te3 nanowires were fabricated by a template-assisted pulsed electrodeposition technique; the thermal conductivity of a single Bi0.5Sb1.5Te3 nanowire of different diameters was characterized through a self-heating 3 ω method. The temperature-dependent resistance measurements prove the semiconductor behavior of the nanowires. The extremely low thermal conductivity of the nanowires was found compared with the corresponding bulk, and the Umklapp peaks shift to a higher temperature as the decreasing nanowire’s diameter decreases, which qualitatively agrees with the theoretical calculations based on the Callaway model. The boundary scattering plays an important role in the reduction of the thermal conductivity and in the shift of the Umklapp peak of the Bi0.5Sb1.5Te3 nanowires.

  15. Thermal and quantum phase slips in niobium-nitride nanowires based on suspended carbon nanotubes

    SciTech Connect

    Masuda, Kohei; Takagi, Tasuku; Hashimoto, Takayuki; Moriyama, Satoshi Komatsu, Katsuyoshi; Morita, Yoshifumi; Miki, Norihisa; Tanabe, Takasumi; Maki, Hideyuki

    2016-05-30

    Superconducting nanowires have attracted considerable attention due to their unique quantum-mechanical properties, as well as their potential as next-generation quantum nanodevices, such as single-photon detectors, phase-slip (PS) qubits, and other hybrid structures. In this study, we present the results of one-dimensional (1D) superconductivity in nanowires fabricated by coating suspended carbon nanotubes with a superconducting thin niobium nitride (NbN) film. In the resistance-temperature characteristic curves, hallmarks of 1D superconductivity with PS events are observed with unconventional negative magnetoresistance. We also confirm that a crossover occurs between thermal and quantum PSs as the temperature is lowered.

  16. Capillarity creates single-crystal calcite nanowires from amorphous calcium carbonate.

    PubMed

    Kim, Yi-Yeoun; Hetherington, Nicola B J; Noel, Elizabeth H; Kröger, Roland; Charnock, John M; Christenson, Hugo K; Meldrum, Fiona C

    2011-12-23

    Single-crystal calcite nanowires are formed by crystallization of morphologically equivalent amorphous calcium carbonate (ACC) particles within the pores of track etch membranes. The polyaspartic acid stabilized ACC is drawn into the membrane pores by capillary action, and the single-crystal nature of the nanowires is attributed to the limited contact of the intramembrane ACC particle with the bulk solution. The reaction environment then supports transformation to a single-crystal product.

  17. Large scale synthesis of highly pure single crystalline tellurium nanowires by thermal evaporation method.

    PubMed

    Mohanty, Paritosh; Park, Jeunghee; Kim, Bongsoo

    2006-11-01

    Single crystalline tellurium nanowires were successfully synthesized in large scale by a facile approach of vaporizing tellurium metal and condensing the vapor in an inert atmosphere onto a Si substrate. Tellurium was evaporated by heating at 300 degrees C at 1 torr and condensed on the Si substrate at 100-150 degrees C, in the downstream of argon (Ar) gas at a flow rate of 25 sccm for 30 min. The as-synthesized nanowires have diameters between 100-300 nm and lengths up to several micrometers. The single crystalline nanowires grew in a preferred [0001] direction. The obtained nanowires were highly pure as only tellurium metal was used in the vaporization process, and no other reagent, surfactant, or template were used for the growth. This low temperature and high-yield approach to the tellurium nanowires synthesis may facilitate its industrial production for various applications.

  18. Electrical properties of single CdTe nanowires.

    PubMed

    Matei, Elena; Florica, Camelia; Costas, Andreea; Toimil-Molares, María Eugenia; Enculescu, Ionut

    2015-01-01

    Ion track, nanoporous membranes were employed as templates for the preparation of CdTe nanowires. For this purpose, electrochemical deposition from a bath containing Cd and Te ions was employed. This process leads to high aspect ratio CdTe nanowires, which were harvested and placed on a substrate with lithographically patterned, interdigitated electrodes. Focused ion beam-induced metallization was used to produce individual nanowires with electrical contacts and electrical measurements were performed on these individual nanowires. The influence of a bottom gate was investigated and it was found that surface passivation leads to improved transport properties.

  19. Electrical properties of single CdTe nanowires

    PubMed Central

    Matei, Elena; Florica, Camelia; Costas, Andreea; Toimil-Molares, María Eugenia

    2015-01-01

    Summary Ion track, nanoporous membranes were employed as templates for the preparation of CdTe nanowires. For this purpose, electrochemical deposition from a bath containing Cd and Te ions was employed. This process leads to high aspect ratio CdTe nanowires, which were harvested and placed on a substrate with lithographically patterned, interdigitated electrodes. Focused ion beam-induced metallization was used to produce individual nanowires with electrical contacts and electrical measurements were performed on these individual nanowires. The influence of a bottom gate was investigated and it was found that surface passivation leads to improved transport properties. PMID:25821685

  20. Tuning the magnetic anisotropy of Co-Ni nanowires: comparison between single nanowires and nanowire arrays in hard-anodic aluminum oxide membranes.

    PubMed

    Vega, V; Böhnert, T; Martens, S; Waleczek, M; Montero-Moreno, J M; Görlitz, D; Prida, V M; Nielsch, K

    2012-11-23

    Co(x)Ni(1-x) alloy nanowires with varying Co content (0 ≤ x ≤ 0.95), having a diameter of 130 nm and length of around 20 μm, are synthesized by template-assisted electrodeposition into the nanopores of SiO(2) conformal coated hard-anodic aluminum oxide membranes. The magneto-structural properties of both single isolated nanowires and hexagonally ordered nanowire arrays of Co-Ni alloys are systematically studied by means of magneto-optical Kerr effect magnetometry and vibrating sample magnetometry, respectively, allowing us to compare different alloy compositions and to distinguish between the magnetostatic and magnetocrystalline contributions to the effective magnetic anisotropy for each system. The excellent tunable soft magnetic properties and magnetic bistability exhibited by low Co content Co-Ni nanowires indicate that they might become the material of choice for the development of nanostructured magnetic systems and devices as an alternative to Fe-Ni alloy based systems, being chemically more robust. Furthermore, Co contents higher than 51 at.% allow us to modify the magnetic behavior of Co-rich nanowires by developing well controlled magnetocrystalline anisotropy, which is desirable for data storage applications.

  1. Single n(+)-i-n(+) InP nanowires for highly sensitive terahertz detection.

    PubMed

    Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B; Tan, Hark Hoe; Jagadish, Chennupati

    2017-03-24

    Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n(+)-i-n(+) InP nanowires. The axial doping profile of the n(+)-i-n(+) InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n(+)-i-n(+) InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

  2. Single n+-i-n+ InP nanowires for highly sensitive terahertz detection

    NASA Astrophysics Data System (ADS)

    Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L.; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B.; Tan, Hark Hoe; Jagadish, Chennupati

    2017-03-01

    Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n+-i-n+ InP nanowires. The axial doping profile of the n+-i-n+ InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n+-i-n+ InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

  3. Probing the low thermal conductivity of single-crystalline porous Si nanowires

    NASA Astrophysics Data System (ADS)

    Zhao, Yunshan; Lina Yang Collaboration; Lingyu Kong Collaboration; Baowen Li Collaboration; John T L Thong Collaboration; Kedar Hippalgaonkar Collaboration

    Pore-like structures provide a novel way to reduce the thermal conductivity of silicon nanowires, compared to both smooth-surface VLS nanowires and rough EE nanowires. Because of enhanced phonon scattering with interface and decrease in phonon transport path, the porous nanostructures show reduction in thermal conductance by few orders of magnitude. It proves to be extremely challenging to evaluate porosity accurately in an experimental manner and further understand its effect on thermal transport. In this study, we use the newly developed electron-beam based micro-electrothermal device technique to study the porosity dependent thermal conductivity of mesoporous silicon nanowires that have single-crystalline scaffolding. Based on the Casino simulation, the power absorbed by the nanowire, coming from the loss of travelling electron energy, has a linear relationship with it cross section. The relationship has been verified experimentally as well. Monte Carlo simulation is carried out to theoretically predict the thermal conductivity of silicon nanowires with a specific value of porosity. These single-crystalline porous silicon nanowires show extremely low thermal conductivity, even below the amorphous limit. These structures together with our experimental techniques provide a particularly intriguing platform to understand the phonon transport in nanoscale and aid the performance improvement in future nanowires-based devices.

  4. Subcellular Neural Probes from Single-Crystal Gold Nanowires

    PubMed Central

    2014-01-01

    Size reduction of neural electrodes is essential for improving the functionality of neuroprosthetic devices, developing potent therapies for neurological and neurodegenerative diseases, and long-term brain–computer interfaces. Typical neural electrodes are micromanufactured devices with dimensions ranging from tens to hundreds of micrometers. Their further miniaturization is necessary to reduce local tissue damage and chronic immunological reactions of the brain. Here we report the neural electrode with subcellular dimensions based on single-crystalline gold nanowires (NWs) with a diameter of ∼100 nm. Unique mechanical and electrical properties of defect-free gold NWs enabled their implantation and recording of single neuron-activities in a live mouse brain despite a ∼50× reduction of the size compared to the closest analogues. Reduction of electrode dimensions enabled recording of neural activity with improved spatial resolution and differentiation of brain activity in response to different social situations for mice. The successful localization of the epileptic seizure center was also achieved using a multielectrode probe as a demonstration of the diagnostics potential of NW electrodes. This study demonstrated the realism of single-neuron recording using subcellular-sized electrodes that may be considered a pivotal point for use in diverse studies of chronic brain diseases. PMID:25112683

  5. Single-Nanowire Electrochemical Probe Detection for Internally Optimized Mechanism of Porous Graphene in Electrochemical Devices.

    PubMed

    Hu, Ping; Yan, Mengyu; Wang, Xuanpeng; Han, Chunhua; He, Liang; Wei, Xiujuan; Niu, Chaojiang; Zhao, Kangning; Tian, Xiaocong; Wei, Qiulong; Li, Zijia; Mai, Liqiang

    2016-03-09

    Graphene has been widely used to enhance the performance of energy storage devices due to its high conductivity, large surface area, and excellent mechanical flexibility. However, it is still unclear how graphene influences the electrochemical performance and reaction mechanisms of electrode materials. The single-nanowire electrochemical probe is an effective tool to explore the intrinsic mechanisms of the electrochemical reactions in situ. Here, pure MnO2 nanowires, reduced graphene oxide/MnO2 wire-in-scroll nanowires, and porous graphene oxide/MnO2 wire-in-scroll nanowires are employed to investigate the capacitance, ion diffusion coefficient, and charge storage mechanisms in single-nanowire electrochemical devices. The porous graphene oxide/MnO2 wire-in-scroll nanowire delivers an areal capacitance of 104 nF/μm(2), which is 4.0 and 2.8 times as high as those of reduced graphene oxide/MnO2 wire-in-scroll nanowire and MnO2 nanowire, respectively, at a scan rate of 20 mV/s. It is demonstrated that the reduced graphene oxide wrapping around the MnO2 nanowire greatly increases the electronic conductivity of the active materials, but decreases the ion diffusion coefficient because of the shielding effect of graphene. By creating pores in the graphene, the ion diffusion coefficient is recovered without degradation of the electron transport rate, which significantly improves the capacitance. Such single-nanowire electrochemical probes, which can detect electrochemical processes and behavior in situ, can also be fabricated with other active materials for energy storage and other applications in related fields.

  6. Characterization of superconducting nanowire single-photon detector with artificial constrictions

    SciTech Connect

    Zhang, Ling; Liu, Dengkuan; Wu, Junjie; He, Yuhao; Lv, Chaolin; You, Lixing Zhang, Weijun; Zhang, Lu; Liu, Xiaoyu; Wang, Zhen Xie, Xiaoming

    2014-06-15

    Statistical studies on the performance of different superconducting nanowire single-photon detectors (SNSPDs) on one chip suggested that random constrictions existed in the nanowire that were barely registered by scanning electron microscopy. With the aid of advanced e-beam lithography, artificial geometric constrictions were fabricated on SNSPDs as well as single nanowires. In this way, we studied the influence of artificial constrictions on SNSPDs in a straight forward manner. By introducing artificial constrictions with different wire widths in single nanowires, we concluded that the dark counts of SNSPDs originate from a single constriction. Further introducing artificial constrictions in SNSPDs, we studied the relationship between detection efficiency and kinetic inductance and the bias current, confirming the hypothesis that constrictions exist in SNSPDs.

  7. Initial Growth of Single-Crystalline Nanowires: From 3D Nucleation to 2D Growth

    NASA Astrophysics Data System (ADS)

    Huang, X. H.; Li, G. H.; Sun, G. Z.; Dou, X. C.; Li, L.; Zheng, L. X.

    2010-06-01

    The initial growth stage of the single-crystalline Sb and Co nanowires with preferential orientation was studied, which were synthesized in porous anodic alumina membranes by the pulsed electrodeposition technique. It was revealed that the initial growth of the nanowires is a three-dimensional nucleation process, and then gradually transforms to two-dimensional growth via progressive nucleation mechanism, which resulting in a structure transition from polycrystalline to single crystalline. The competition among the nuclei inside the nanoscaled-confined channel and the growth kinetics is responsible for the structure transition of the initial grown nanowires.

  8. Quantum dots (QDs) immobilization on metal nanowire end-facets for single photon source application

    NASA Astrophysics Data System (ADS)

    Kim, J.; Lee, B. C.; Kang, C.; Lee, S. Y.; Park, J. H.; Shin, H. J.

    2010-02-01

    We introduce a fabrication process to immobilize cadmium selenide (CdSe) Quantum Dots (QDs) on end-facets of metal nanowires, which can be possibly used as a cavity-free unidirectional single photon source with high coupling efficiency due to high Purcell factor. Nanowires were fabricated using E-beam lithography, E-beam evaporation, and lift-off process and finally covered with chemically deposited silicon dioxide (SiO2) layer. End-facets of metal nanowires were defined using wet etching process. QD immobilization was accomplished through surface modifications on both metal and QD surfaces. We immobilized thiol (-SH) functionalized 15 base pair (bp) ssDNA on Au nanowire surface to hybridize with its complimentary amine (- NH3) functionalized 15bp ssDNA and conjugated the amine functionalized 15bp ssDNA with QD. Presenting QD immobilization method showed high selectivity between metal nanowire and SiO2 surfaces.

  9. Facile synthesis of single-crystal silver nanowires through a tannin-reduction process

    NASA Astrophysics Data System (ADS)

    Tian, Xuelin; Li, Juan; Pan, Shilie

    2009-10-01

    A facile aqueous-phase approach for the synthesis of silver nanowires is reported, in which tannin (C76H52O46) is used as a mild reducing agent for silver nitrate. This synthesis is a root-temperature, seedless process, and does not need any surfactant or capping agent to direct the anisotropic growth of the nanoparticles. The obtained silver nanowires are about 25 nm in diameter and up to 20 μm in length. Unlike the usually reported cases of silver nanowires or nanorods, in which the silver nanocrystals were often generated with a multi-twinned structure, in our experiments the nanowires adopt a single-crystal structure with their growth direction along the [100] axis. Investigations on the influence of different experimental conditions indicate that slow rate of the reduction process is a key factor for inducing the anisotropic growth of the nanowires.

  10. Characterization of single crystalline CdS nanowires synthesized by solvothermal method.

    PubMed

    Hadia, N M A; García-Granda, Santiago; García, José R

    2014-07-01

    Cadmium sulfide (CdS) nanowires with uniform diameter were prepared by the solvothermal method using ethylenediamine (en) as solvent. The products were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scan electron microscopy (SEM), energy dispersive spectroscopy (EDS) and transmission electron microscopy (TEM). It was found that the products are hexagonal crystals of CdS nanowires with diameter of 28 nm and length up to several micrometres. Selected area electron diffraction (SAED) and high resolution TEM (HRTEM) studies indicate the single-crystalline nature of CdS nanowires with an oriented growth along the c-axis direction. The absorption spectrum of the as-prepared CdS nanowires shows an absorption peak of around 485 nm. These CdS nanowires exhibit bright photoluminescence (PL) with two distinct emission bands at 502 nm and 696 nm.

  11. A magnetic force microscopy study of the magnetic reversal of a single Fe nanowire.

    PubMed

    Wang, T; Wang, Y; Fu, Y; Hasegawa, T; Li, F S; Saito, H; Ishio, S

    2009-03-11

    The magnetization reversal properties of a single 60 nm diameter Fe nanowire were investigated with an in-field magnetic force microscope (MFM). MFM images were observed in a successively decreasing applied field, at various angles between the applied field and the nanowire axis. The results show that the magnetization undergoes a sharp reversal at various angles. When the applied field deviates from the nanowire axis, before complete magnetization reversal, a coherent rotation of magnetic moments inside the nanowire and a stable vortex state at the end of the nanowire are exhibited. The angle dependence of the switching field can be closely described by a curling model, despite the fact the magnetization reversal process is not identical to this model.

  12. Dielectrophoretic investigation of Bi₂Te₃ nanowires-a microfabricated thermoelectric characterization platform for measuring the thermoelectric and structural properties of single nanowires.

    PubMed

    Wang, Zhi; Kojda, Danny; Peranio, Nicola; Kroener, Michael; Mitdank, Rüdiger; Toellner, William; Nielsch, Kornelius; Fischer, Saskia F; Gutsch, Sebastian; Zacharias, Margit; Eibl, Oliver; Woias, Peter

    2015-03-27

    In this article a microfabricated thermoelectric nanowire characterization platform to investigate the thermoelectric and structural properties of single nanowires is presented. By means of dielectrophoresis (DEP), a method to manipulate and orient nanowires in a controlled way to assemble them onto our measurement platform is introduced. The thermoelectric platform fabricated with optimally designed DEP electrodes results in a yield of nanowire assembly of approximately 90% under an applied peak-to-peak ac signal Vpp = 10 V and frequency f = 20 MHz within a series of 200 experiments. Ohmic contacts between the aligned single nanowire and the electrodes on the platform are established by electron beam-induced deposition. The Seebeck coefficient and electrical conductivity of electrochemically synthesized Bi2Te3 nanowires are measured to be -51 μV K(-1) and (943 ± 160)/(Ω(-1) cm(-1)), respectively. Chemical composition and crystallographic structure are obtained using transmission electron microscopy. The selected nanowire is observed to be single crystalline over its entire length and no grain boundaries are detected. At the surface of the nanowire, 66.1 ± 1.1 at.% Te and 34.9 ± 1.1 at.% Bi are observed. In contrast, chemical composition of 64.2 at.% Te and 35.8 at.% Bi is detected in the thick center of the nanowire.

  13. Direct-write fabrication of a nanoscale digital logic element on a single nanowire

    NASA Astrophysics Data System (ADS)

    Roy, Somenath; Gao, Zhiqiang

    2010-06-01

    In this paper we report on the 'direct-write' fabrication and electrical characteristics of a nanoscale logic inverter, integrating enhancement-mode (E-mode) and depletion-mode (D-mode) field-effect transistors (FETs) on a single zinc oxide (ZnO) nanowire. 'Direct-writing' of platinum metal electrodes and a dielectric layer is executed on individual single-crystalline ZnO nanowires using either a focused electron beam (FEB) or a focused ion beam (FIB). We fabricate a top-gate FET structure, in which the gate electrode wraps around the ZnO nanowire, resulting in a more efficient gate response than the conventional back-gate nanowire transistors. For E-mode device operation, the gate electrode (platinum) is deposited directly onto the ZnO nanowire by a FEB, which creates a Schottky barrier and in turn a fully depleted channel. Conversely, sandwiching an insulating layer between the FIB-deposited gate electrode and the nanowire channel makes D-mode operation possible. Integrated E- and D-mode FETs on a single nanowire exhibit the characteristics of a direct-coupled FET logic (DCFL) inverter with a high gain and noise margin.

  14. Electrical control of single hole spins in nanowire quantum dots.

    PubMed

    Pribiag, V S; Nadj-Perge, S; Frolov, S M; van den Berg, J W G; van Weperen, I; Plissard, S R; Bakkers, E P A M; Kouwenhoven, L P

    2013-03-01

    The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits). Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable challenge. Hole spins in III-V semiconductors have unique properties, such as a strong spin-orbit interaction and weak coupling to nuclear spins, and therefore, have the potential for enhanced spin control and longer coherence times. A weaker hyperfine interaction has previously been reported in self-assembled quantum dots using quantum optics techniques, but the development of hole-spin-based electronic devices in conventional III-V heterostructures has been limited by fabrication challenges. Here, we show that gate-tunable hole quantum dots can be formed in InSb nanowires and used to demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tunable between hole and electron quantum dots, which allows the hyperfine interaction strengths, g-factors and spin blockade anisotropies to be compared directly in the two regimes.

  15. Ultralong single-crystal metallic Ni2Si nanowires with low resistivity.

    PubMed

    Song, Yipu; Schmitt, Andrew L; Jin, Song

    2007-04-01

    Ultralong, single-crystal Ni2Si nanowires sheathed with amorphous silicon oxide were synthesized on a large scale by a chemical vapor transport (CVT) method, using iodine as the transport reagent and Ni2Si powder as the source material. Structural characterization using powder X-ray diffraction, electron microscopy, and energy-dispersive spectroscopy shows that the nanowires have Ni2Si-SiOx core-shell structure with single-crystal Ni2Si core and amorphous silicon oxide shell. The oxide shell is electrically insulating and can be removed by HF etching. Four-terminal electrical measurements show that the single-crystal nanowire has extremely low resistivity of 21 muOmega.cm and is capable of supporting remarkably high failure current density >108 A/cm2. These unique Ni2Si nanowires are very attractive nanoscale building blocks for interconnects and fully silicided (FUSI) gate applications in nanoelectronics.

  16. Fabrication of enzyme-degradable and size-controlled protein nanowires using single particle nano-fabrication technique

    PubMed Central

    Omichi, Masaaki; Asano, Atsushi; Tsukuda, Satoshi; Takano, Katsuyoshi; Sugimoto, Masaki; Saeki, Akinori; Sakamaki, Daisuke; Onoda, Akira; Hayashi, Takashi; Seki, Shu

    2014-01-01

    Protein nanowires exhibiting specific biological activities hold promise for interacting with living cells and controlling and predicting biological responses such as apoptosis, endocytosis and cell adhesion. Here we report the result of the interaction of a single high-energy charged particle with protein molecules, giving size-controlled protein nanowires with an ultra-high aspect ratio of over 1,000. Degradation of the human serum albumin nanowires was examined using trypsin. The biotinylated human serum albumin nanowires bound avidin, demonstrating the high affinity of the nanowires. Human serum albumin–avidin hybrid nanowires were also fabricated from a solid state mixture and exhibited good mechanical strength in phosphate-buffered saline. The biotinylated human serum albumin nanowires can be transformed into nanowires exhibiting a biological function such as avidin–biotinyl interactions and peroxidase activity. The present technique is a versatile platform for functionalizing the surface of any protein molecule with an extremely large surface area. PMID:24770668

  17. Controllable photoresponse behavior in a single InAs nanowire phototransistor

    NASA Astrophysics Data System (ADS)

    Li, Bang; Yan, Xin; Zhang, Xia; Luo, Yanbin; Lu, Qichao; Ren, Xiaomin

    2017-09-01

    We demonstrate a single InAs nanowire phototransistor with controllable photoresponse behavior. The device is based on a top-gated nanowire field effect transistor with an electron mobility of 5790 cm2 V-1 s-1. In the absence of gate voltage, negative and positive photoresponses are observed under low and high illumination, respectively. By applying a relatively high negative/positive gate voltage, pure positive/negative photoresponse is obtained, respectively. The controllable photoresponse is attributed to a gate-voltage-induced barrier height modulation between the trap state energy level in the photogating layer and the conduction band of nanowire. The device is promising for optoelectronic applications.

  18. Photovoltaic effect and charge storage in single ZnO nanowires

    SciTech Connect

    Liao Zhimin; Xu Jun; Zhang Jingmin; Yu Dapeng

    2008-07-14

    Asymmetric Schottky barriers between ZnO nanowire and metal electrode have been fabricated at the two ends of the nanowire. An obvious photocurrent generated from the device at zero voltage bias can be switched on/off with quick response by controlling the light irradiation. Moreover, the device can still afford a current at zero bias after switching off light illumination, which is ascribed to the charge storage effect in single ZnO nanowires. The underlying mechanisms related to the photovoltaic effect and charge storage were discussed.

  19. Electrical transport properties of single-crystal Al nanowires

    NASA Astrophysics Data System (ADS)

    Brunbauer, Florian M.; Bertagnolli, Emmerich; Majer, Johannes; Lugstein, Alois

    2016-09-01

    Single-crystal Al nanowires (NWs) were fabricated by thermally induced substitution of vapor-liquid-solid grown Ge NWs by Al. The resistivity of the crystalline Al (c-Al) NWs was determined to be ρ = (131 ± 27) × 10-9 Ω m, i.e. approximately five times higher than for bulk Al, but they withstand remarkably high current densities of up to 1.78 × 1012 A m-2 before they ultimately melt due to Joule heating. The maximum current density before failure correlates with the NW diameter, with thinner NWs tolerating significantly higher current densities due to efficient heat dissipation and the reduced lattice heating in structures smaller than the electron-phonon scattering length. The outstanding current-carrying capacity of the c-Al NWs clearly exceeds those of common conductors and surpasses requirements for metallization of future high-performance devices. The linear temperature coefficient of the resistance of c-Al NWs appeared to be lower than for bulk Al and a transition to a superconducting state in c-Al NWs was observed at a temperature of 1.46 K.

  20. Facile morphological control of single-crystalline silicon nanowires

    NASA Astrophysics Data System (ADS)

    Wu, Shao-long; Zhang, Ting; Zheng, Rui-ting; Cheng, Guo-an

    2012-10-01

    To realize wider potentials of silicon nanowires (SiNWs), the morphological controllability is desirable. In this paper, we synthesized well vertically- and slantingly-aligned SiNWs with ultra-high aspect ratio in metal-assisted chemical etching method, and wafer-scale zigzag SiNWs with three types of turning angle were also obtained. The formation of the curved SiNWs is a result of the alternation of moving direction of Ag nanoparticles between the preferred <1 0 0> and other directions in Si substrates. The as-prepared SiNWs are single-crystalline and their orientations are mostly along the <1 0 0> or <1 1 1> directions. The surface of the resulting SiNWs can be controlled to be smooth or rough, with or without mesopores, by adjusting the etching conditions and using various Si substrates with different crystal orientations and doping levels. Moreover, the effects of the etching conditions (etching time, oxidant concentration, deposition time of Ag nanoparticles and etching temperature) and substrate properties (crystal orientation and doping level) on the as-prepared SiNWs have been discussed.

  1. Electromigration in focused ion beam deposited tungsten single nanowires

    NASA Astrophysics Data System (ADS)

    Mandal, Pabitra; Das, Bipul; Raychaudhuri, A. K.

    As the focused ion beam induced deposited (FIBID) nanowires (NWs) of W, Pt are being used in nanoelectronic technology to connect individual nanodevices, repairing damaged interconnects in integrated circuit (IC), electromigration study in FIBID-NWs has become essential. Briefly, when a thin conductor, like metallic Al, Cu interconnects in an IC chip carry quite high current density ~1012 A/m2, ions or atoms start migrating. Such migration causes void and hillock formation leading to interconnect discontinuity, short circuit and ultimately IC failure. Our electromigration study in single FIBID-NWs of W reveals that failure in NWs of width and thickness ~100 nm occurs typically at 1011 A/m2. Most notably, void and hillock always form in opposite polarity compared to typical metallic NWs. Such distinctly new outcome is explained via electromigration driven by direct force (ionic charge*electric field) opposed to wind force driven migration observed in metallic NWs. As FIBID-NWs are composite in nature, different species (e.g., Ga, W and C) migrate with different degree and direction depending on their oxidation state, leading to redistribution of species across NW length and formation of a Ga rich hillock. S. N. Bose National Centre for Basic Sciences, Block-JD, Sector-III, Salt Lake, Kolkata-98, India.

  2. Charge transport in single CuO nanowires

    SciTech Connect

    Wu, Junnan; Yin, Bo; Wu, Fei; Myung, Yoon; Banerjee, Parag

    2014-11-03

    Charge transport in single crystal, p-type cupric oxide (CuO) nanowire (NW) was studied through temperature based (120 K–400 K) current-voltage measurements. CuO NW with a diameter of 85 nm was attached to Au electrodes 2.25 μm apart, using dielectrophoresis. At low electrical field (<0.89 × 10{sup 3 }V/cm), an ohmic conduction is observed with an activation energy of 272 meV. The injected electrons fill traps with an average energy, E{sub T} = 26.6 meV and trap density, N{sub T} = 3.4 × 10{sup 15 }cm{sup −3}. After the traps are saturated, space charge limited current mechanism becomes dominant. For 120 K ≤ T ≤ 210 K phonon scattering limits mobility. For T ≥ 220 K, a thermally activated mobility is observed and is attributed to small polaron hopping with an activation energy of 44 meV. This mechanism yields a hole mobility of 0.0015 cm{sup 2}/V s and an effective hole concentration of 4 × 10{sup 18 }cm{sup −3} at 250 K.

  3. Single ZnO Nanowire-Based Gas Sensors to Detect Low Concentrations of Hydrogen

    PubMed Central

    Cardoza-Contreras, Marlene N.; Romo-Herrera, José M.; Ríos, Luis A.; García-Gutiérrez, R.; Zepeda, T. A.; Contreras, Oscar E.

    2015-01-01

    Low concentrations of hazardous gases are difficult to detect with common gas sensors. Using semiconductor nanostructures as a sensor element is an alternative. Single ZnO nanowire gas sensor devices were fabricated by manipulation and connection of a single nanowire into a four-electrode aluminum probe in situ in a dual-beam scanning electron microscope-focused ion beam with a manipulator and a gas injection system in/column. The electrical response of the manufactured devices shows response times up to 29 s for a 121 ppm of H2 pulse, with a variation in the nanowire resistance appreciable at room temperature and at 373.15 K of approximately 8% and 14% respectively, showing that ZnO nanowires are good candidates to detect low concentrations of H2. PMID:26690158

  4. Polarization properties of surface plasmon enhanced photoluminescence from a single Ag nanowire.

    PubMed

    Song, Min; Chen, Gengxu; Liu, Yan; Wu, E; Wu, Botao; Zeng, Heping

    2012-09-24

    Metallic nanowires are of great research interest due to their applications in surface plasmon polariton coupling of light. The efficiency is much dependent on the polarization of the light due to the phase matching requirement in the light-surface plasmon polariton coupling. By scanning confocal microscope, the photoluminescence from a single Ag nanowire was demonstrated strongly dependent on the excitation laser polarization, showing good consistency with the theoretical simulation. Meanwhile strong avalanche photoluminescence from a single Ag nanowire was observed when the excitation laser was polarized along the long axis of the Ag nanowire. The photoluminescence emission exhibited a polarization-sensitive spatial distribution. This may stimulate promising applications in designing polarization-controllable nanoscale plasmonic devices.

  5. Vortex-crossing-induced timing jitter of superconducting nanowire single-photon detectors

    NASA Astrophysics Data System (ADS)

    Wu, Hao; Gu, Chao; Cheng, Yuhao; Hu, Xiaolong

    2017-08-01

    We investigate the timing properties of single-photon-triggered vortex (or anti-vortex) crossing in a current-biased superconducting nanowire and find that the time delays caused in the vortex-crossing process vary with the transverse positions on the nanowire where the photons are absorbed. The position-dependent time delays indicate that the vortex-crossing process induces timing jitter of a superconducting nanowire single-photon detector (SNSPD). The magnitude of this timing jitter further depends on various parameters, including the polarization of the incident photon, the bias current, and the width of the nanowire. This vortex-crossing-induced timing jitter might represent the lower bound of the timing jitter of the SNSPD and fundamentally limit its time-resolving capability.

  6. Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon

    NASA Astrophysics Data System (ADS)

    Heo, Junseok; Guo, Wei; Bhattacharya, Pallab

    2011-01-01

    Optically pumped lasing at room temperature in a silicon based monolithic single GaN nanowire with a two-dimensional photonic crystal microcavity is demonstrated. Catalyst-free nanowires with low density (˜108 cm-2) are grown on Si by plasma-assisted molecular beam epitaxy. High resolution transmission electron microscopy images reveal that the nanowires are of wurtzite structure and they have no observable defects. A single nanowire laser fabricated on Si is characterized by a lasing transition at λ =371.3 nm with a linewidth of 0.55 nm. The threshold is observed at a pump power density of ˜120 kW/cm2 and the spontaneous emission factor β is estimated to be 0.08.

  7. Bleach-Imaged Plasmon Propagation (BlIPP) in Single Gold Nanowires

    SciTech Connect

    Solis, David; Chang, Wei-Shun; Khanal, Bishnu P.; Bao, Kui; Nordlander, Peter; Zubarev, Eugene R.; Link, Stephan

    2010-08-13

    Here, we present a novel approach to visualize propagating surface plasmon polaritons through plasmon-exciton interactions between single gold nanowires and a thin film of a fluorescent polymer. A plasmon polariton was launched by exciting one end of a single gold nanowire with a 532 nm laser. The local near-field of the propagating plasmon modes caused bleaching of the polymer emission. The degree of photobleaching along the nanowire could be correlated with the propagation distance of the surface plasmon polaritons. Using this method of bleach-imaged plasmon propagation (BlIPP), we determined a plasmon propagation distance of 1.8 ± 0.4 μm at 532 nm for chemically grown gold nanowires. Our results are supported by finite difference time domain electromagnetic simulations.

  8. Crystallographic anisotropy of the resistivity size effect in single crystal tungsten nanowires.

    PubMed

    Choi, Dooho; Moneck, Matthew; Liu, Xuan; Oh, Soong Ju; Kagan, Cherie R; Coffey, Kevin R; Barmak, Katayun

    2013-01-01

    This work demonstrates an anisotropic increase in resistivity with decreasing width in single crystal tungsten (W) nanowires having a height of 21 nm. Nanowire-widths were in the range of 15-451 nm, with the anisotropy observed for widths below 50 nm. The longitudinal directions of the nanowires coincided with the <100>, <110> and <111> orientations of the body centered cubic phase of W. The resistivity increase was observed to be minimized for the <111>-oriented single crystal nanowires, exhibiting a factor of two lower increase in resistivity at a width of ~15 nm, relative to the thin film resistivity (i.e., an infinitely wide wire). The observed anisotropy is attributed to crystallographic anisotropy of the Fermi velocity and the resultant anisotropy of the electron mean free path in W, and underscores the critical role of crystallographic orientation in nanoscale metallic conduction.

  9. Modal characteristics in a single-nanowire cavity with a triangular cross section.

    PubMed

    Seo, Min-Kyo; Yang, Jin-Kyu; Jeong, Kwang-Yong; Park, Hong-Gyu; Qian, Fang; Ee, Ho-Seok; No, You-Shin; Leet, Yong-Hee

    2008-12-01

    In this study, the modal characteristics of a single-GaN nanowire cavity with a triangular cross section surrounded by air or located on a silicon dioxide substrate have been analyzed. Two transverse resonant modes, transverse electric-like and transverse magnetic-like modes, are dominantly excited for nanowire cavities that have a small cross-sectional size of <300 nm and length of 10 microm. Using the three-dimensional finite-difference time-domain simulation method, quality factors, confinement factors, single-mode conditions, and far-field emission patterns are investigated for a nanowire cavity as a function of one length of the triangular cross section. The results of these simulations provide information that will be vital for the design and development of efficient nanowire lasers and light sources in ultracompact nanophotonic integrated circuits.

  10. Crystallographic anisotropy of the resistivity size effect in single crystal tungsten nanowires

    PubMed Central

    Choi, Dooho; Moneck, Matthew; Liu, Xuan; Oh, Soong Ju; Kagan, Cherie R.; Coffey, Kevin R.; Barmak, Katayun

    2013-01-01

    This work demonstrates an anisotropic increase in resistivity with decreasing width in single crystal tungsten (W) nanowires having a height of 21 nm. Nanowire-widths were in the range of 15–451 nm, with the anisotropy observed for widths below 50 nm. The longitudinal directions of the nanowires coincided with the <100>, <110> and <111> orientations of the body centered cubic phase of W. The resistivity increase was observed to be minimized for the <111>-oriented single crystal nanowires, exhibiting a factor of two lower increase in resistivity at a width of ~15 nm, relative to the thin film resistivity (i.e., an infinitely wide wire). The observed anisotropy is attributed to crystallographic anisotropy of the Fermi velocity and the resultant anisotropy of the electron mean free path in W, and underscores the critical role of crystallographic orientation in nanoscale metallic conduction. PMID:24005230

  11. Single electron pumping in InAs nanowire double quantum dots

    NASA Astrophysics Data System (ADS)

    Fuhrer, A.; Fasth, C.; Samuelson, L.

    2007-07-01

    Closely spaced local gate electrodes are used to electrically define a double quantum dot along an InAs nanowire crystal. By applying a periodic pulse sequence to two plunger gate electrodes controlling the double quantum dot charge configuration, the device is operated as a single electron pump. The authors find that within measurement accuracy, the pumping current equals one electron per cycle for frequencies up to 2MHz, demonstrating the suitability of nanowire based quantum dots for pumping applications.

  12. Space-and-time-resolved spectroscopy of single GaN nanowires

    SciTech Connect

    Upadhya, Prashanth C.; Martinez, Julio A.; Li, Qiming; Wang, George T.; Swartzentruber, Brian S.; Taylor, Antoinette J.; Prasankumar, Rohit P.

    2015-06-29

    Gallium nitride nanowires have garnered much attention in recent years due to their attractive optical and electrical properties. An understanding of carrier transport, relaxation, and recombination in these quasi-one-dimensional nanosystems is therefore important in optimizing them for various applications. Here, we present ultrafast optical microscopic measurements on single GaN nanowires. Our experiments, performed while varying the light polarization, excitation fluence, and position, give insight into the mechanisms governing carrier dynamics in these nanosystems.

  13. Single-mode plasmonic waveguiding properties of metal nanowires with dielectric substrates.

    PubMed

    Wang, Yipei; Ma, Yaoguang; Guo, Xin; Tong, Limin

    2012-08-13

    Single-mode plasmonic waveguiding properties of metal nanowires with dielectric substrates are investigated using a finite-element method. Au and Ag are selected as plasmonic materials for nanowire waveguides with diameters down to 5-nm-level. Typical dielectric materials with relatively low to high refractive indices, including magnesium fluoride (MgF2), silica (SiO2), indium tin oxide (ITO) and titanium dioxide (TiO2), are used as supporting substrates. Basic waveguiding properties, including propagation constants, power distributions, effective mode areas, propagation distances and losses are obtained at the typical plasmonic resonance wavelength of 660 nm. Compared to that of a freestanding nanowire, the mode area of a substrate-supported nanowire could be much smaller while maintaining an acceptable propagation length. For example, the mode area and propagation length of a 100-nm-diameter Ag nanowire with a MgF2 substrate are about 0.004 μm2 and 3.4 μm, respectively. The dependences of waveguiding properties on geometric and material parameters of the nanowire-substrate system are also provided. Our results may provide valuable references for waveguiding dielectric-supported metal nanowires for practical applications.

  14. Single p-type/intrinsic/n-type silicon nanowires as nanoscale avalanche photodetectors.

    PubMed

    Yang, Chen; Barrelet, Carl J; Capasso, Federico; Lieber, Charles M

    2006-12-01

    We report the controlled synthesis of axial modulation-doped p-type/intrinsic/n-type (p-i-n) silicon nanowires with uniform diameters and single-crystal structures. The p-i-n nanowires were grown in three sequential steps: in the presence of diborane for the p-type region, in the absence of chemical dopant sources for the middle segment, and in the presence of phosphine for the n-type region. The p-i-n nanowires were structurally characterized by transmission electron microscopy, and the spatially resolved electrical properties of individual nanowires were determined by electrostatic force and scanning gate microscopies. Temperature-dependent current-voltage measurements recorded from individual p-i-n devices show an increase in the breakdown voltage with temperature, characteristic of band-to-band impact ionization, or avalanche breakdown. Spatially resolved photocurrent measurements show that the largest photocurrent is generated at the intrinsic region located between the electrode contacts, with multiplication factors in excess of ca. 30, and demonstrate that single p-i-n nanowires function as avalanche photodiodes. Electron- and hole-initiated avalanche gain measurements performed by localized photoexcitation of the p-type and n-type regions yield multiplication factors of ca. 100 and 20, respectively. These results demonstrate the significant potential of single p-i-n nanowires as nanoscale avalanche photodetectors and open possible opportunities for studying impact ionization of electrons and holes within quasi-one-dimensional semiconductor systems.

  15. Simultaneous high-resolution scanning Bragg contrast and ptychographic imaging of a single solar cell nanowire.

    PubMed

    Wallentin, Jesper; Wilke, Robin N; Osterhoff, Markus; Salditt, Tim

    2015-12-01

    Simultaneous scanning Bragg contrast and small-angle ptychographic imaging of a single solar cell nanowire are demonstrated, using a nanofocused hard X-ray beam and two detectors. The 2.5 µm-long nanowire consists of a single-crystal InP core of 190 nm diameter, coated with amorphous SiO2 and polycrystalline indium tin oxide. The nanowire was selected and aligned in real space using the small-angle scattering of the 140 × 210 nm X-ray beam. The orientation of the nanowire, as observed in small-angle scattering, was used to find the correct rotation for the Bragg condition. After alignment in real space and rotation, high-resolution (50 nm step) raster scans were performed to simultaneously measure the distribution of small-angle scattering and Bragg diffraction in the nanowire. Ptychographic reconstruction of the coherent small-angle scattering was used to achieve sub-beam spatial resolution. The small-angle scattering images, which are sensitive to the shape and the electron density of all parts of the nanowire, showed a homogeneous profile along the nanowire axis except at the thicker head region. In contrast, the scanning Bragg diffraction microscopy, which probes only the single-crystal InP core, revealed bending and crystalline inhomogeneity. Both systematic and non-systematic real-space movement of the nanowire were observed as it was rotated, which would have been difficult to reveal only from the Bragg scattering. These results demonstrate the advantages of simultaneously collecting and analyzing the small-angle scattering in Bragg diffraction experiments.

  16. Simultaneous high-resolution scanning Bragg contrast and ptychographic imaging of a single solar cell nanowire

    PubMed Central

    Wallentin, Jesper; Wilke, Robin N.; Osterhoff, Markus; Salditt, Tim

    2015-01-01

    Simultaneous scanning Bragg contrast and small-angle ptychographic imaging of a single solar cell nanowire are demonstrated, using a nanofocused hard X-ray beam and two detectors. The 2.5 µm-long nanowire consists of a single-crystal InP core of 190 nm diameter, coated with amorphous SiO2 and polycrystalline indium tin oxide. The nanowire was selected and aligned in real space using the small-angle scattering of the 140 × 210 nm X-ray beam. The orientation of the nanowire, as observed in small-angle scattering, was used to find the correct rotation for the Bragg condition. After alignment in real space and rotation, high-resolution (50 nm step) raster scans were performed to simultaneously measure the distribution of small-angle scattering and Bragg diffraction in the nanowire. Ptychographic reconstruction of the coherent small-angle scattering was used to achieve sub-beam spatial resolution. The small-angle scattering images, which are sensitive to the shape and the electron density of all parts of the nanowire, showed a homogeneous profile along the nanowire axis except at the thicker head region. In contrast, the scanning Bragg diffraction microscopy, which probes only the single-crystal InP core, revealed bending and crystalline inhomogeneity. Both systematic and non-systematic real-space movement of the nanowire were observed as it was rotated, which would have been difficult to reveal only from the Bragg scattering. These results demonstrate the advantages of simultaneously collecting and analyzing the small-angle scattering in Bragg diffraction experiments. PMID:26664342

  17. Statistical analysis of the temporal single-photon response of superconducting nanowire single photon detection

    NASA Astrophysics Data System (ADS)

    He, Yu-Hao; Chao-Lin, Lü; Zhang, Wei-Jun; Zhang, Lu; Wu, Jun-Jie; Chen, Si-Jing; You, Li-Xing; Wang, Zhen

    2015-06-01

    A new method to study the transient detection efficiency (DE) and pulse amplitude of superconducting nanowire single photon detectors (SNSPD) during the current recovery process is proposed — statistically analyzing the single photon response under photon illumination with a high repetition rate. The transient DE results match well with the DEs deduced from the static current dependence of DE combined with the waveform of a single-photon detection event. This proves that static measurement results can be used to analyze the transient current recovery process after a detection event. The results are relevant for understanding the current recovery process of SNSPDs after a detection event and for determining the counting rate of SNSPDs. Project supported by the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDB04010200), the National Basic Research Program of China (Grant No. 2011CBA00202), and the National Natural Science Foundation of China (Grant No. 61401441).

  18. Single-crystalline self-branched anatase titania nanowires for dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Li, Zhenquan; Yang, Huang; Wu, Fei; Fu, Jianxun; Wang, Linjun; Yang, Weiguang

    2017-03-01

    The morphology of the anatase titania plays an important role in improving the photovoltaic performance in dye-sensitized solar cells. In this work, single-crystalline self-branched anatase TiO2 nanowires have been synthesized by hydrothermal method using TBAH and CTAB as morphology controlling agents. The obtained self-branched TiO2 nanowires dominated by a large percentage of (010) facets. The photovoltaic conversion efficiency (6.37%) of dye-sensitized solar cell (DSSC) based on the self-branched TiO2 nanowires shows a significant improvement (26.6%) compared to that of P25 TiO2 (5.03%). The enhanced performance of the self-branched TiO2 nanowires-based DSSC is due to heir large percent of exposed (010) facets which have strong dye adsorption capacity and effective charge transport of the self-branched 1D nanostructures.

  19. Correlation between anisotropy and lattice distortions in single crystal calcite nanowires grown in confinement.

    PubMed

    Verch, Andreas; Côté, Alexander S; Darkins, Robert; Kim, Yi-Yeoun; van de Locht, Renée; Meldrum, Fiona C; Duffy, Dorothy M; Kröger, Roland

    2014-07-09

    Growing nanostructures in confinement allows for the control of their shape, size and structure, as required in many technological applications. We investigated the crystal structure and morphology of calcite nanowires, precipitated in the pores of track-etch membranes, by employing transmission electron microscopy and selected area electron diffraction (SAED). The data showed that the nanowires show no preferred growth orientation and that the crystallographic orientation rotated along the length of the nanowire, with lattice rotation angles of several degrees per micrometer. Finite element calculations indicated that the rotation is caused by the anisotropic crystallographic nature of the calcite mineral, the nanoscale diameter of the wires and the confined space provided by the membrane pore. This phenomenon should also be observed in other single crystal nanowires made from anisotropic materials, which could offer the potential of generating nanostructures with tailored optical, electronic and mechanical properties. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Graphene Enhances Li Storage Capacity of Porous Single-crystalline Silicon Nanowires

    SciTech Connect

    Wang, X.; Han, W.

    2010-12-01

    We demonstrated that graphene significantly enhances the reversible capacity of porous silicon nanowires used as the anode in Li-ion batteries. We prepared our experimental nanomaterials, viz., graphene and porous single-crystalline silicon nanowires, respectively, using a liquid-phase graphite exfoliation method and an electroless HF/AgNO{sub 3} etching process. The Si porous nanowire/graphene electrode realized a charge capacity of 2470 mAh g{sup -1} that is much higher than the 1256 mAh g{sup -1} of porous Si nanowire/C-black electrode and 6.6 times the theoretical capacity of commercial graphite. This relatively high capacity could originate from the favorable charge-transportation characteristics of the combination of graphene with the porous Si 1D nanostructure.

  1. Optical quenching of photoconductivity in CdSe single nanowires via waveguiding excitation.

    PubMed

    Gu, Fuxing; Wang, Pan; Yu, Huakang; Guo, Bing; Tong, Limin

    2011-05-23

    We demonstrate broadband optical quenching of photoconductivity in CdSe single nanowires with low excitation power. Using 1550-nm-wavelength light with 10-nW power for waveguiding excitation, we observe a typical responsivity of 0.5 A/W for quenching the photoconductivity established by 10-µW 660-nm-wavelength background light in a 403-nm-diameter CdSe nanowire, with detectable limit of the quenching power down to pW level at room temperature, which is several orders of magnitude lower than those reported previously. This large quenching effect originates from the enhanced light-defect interaction in the nanowires via waveguiding excitation. These results open new opportunities for noninvasive characterization of deep-level defect states in low-dimensional semiconductor nanomaterials, and novel optoelectronic applications of semiconductor nanowires such as high-sensitive broadband photodetection.

  2. Graphene enhances Li storage capacity of porous single-crystalline silicon nanowires.

    PubMed

    Wang, Xiao-Liang; Han, Wei-Qiang

    2010-12-01

    We demonstrated that graphene significantly enhances the reversible capacity of porous silicon nanowires used as the anode in Li-ion batteries. We prepared our experimental nanomaterials, viz., graphene and porous single-crystalline silicon nanowires, respectively, using a liquid-phase graphite exfoliation method and an electroless HF/AgNO3 etching process. The Si porous nanowire/graphene electrode realized a charge capacity of 2470 mAh g(-1) that is much higher than the 1256 mAh g(-1) of porous Si nanowire/C-black electrode and 6.6 times the theoretical capacity of commercial graphite. This relatively high capacity could originate from the favorable charge-transportation characteristics of the combination of graphene with the porous Si 1D nanostructure.

  3. Single-crystalline self-branched anatase titania nanowires for dye-sensitized solar cells

    NASA Astrophysics Data System (ADS)

    Li, Zhenquan; Yang, Huang; Wu, Fei; Fu, Jianxun; Wang, Linjun; Yang, Weiguang

    2016-12-01

    The morphology of the anatase titania plays an important role in improving the photovoltaic performance in dye-sensitized solar cells. In this work, single-crystalline self-branched anatase TiO2 nanowires have been synthesized by hydrothermal method using TBAH and CTAB as morphology controlling agents. The obtained self-branched TiO2 nanowires dominated by a large percentage of (010) facets. The photovoltaic conversion efficiency (6.37%) of dye-sensitized solar cell (DSSC) based on the self-branched TiO2 nanowires shows a significant improvement (26.6%) compared to that of P25 TiO2 (5.03%). The enhanced performance of the self-branched TiO2 nanowires-based DSSC is due to heir large percent of exposed (010) facets which have strong dye adsorption capacity and effective charge transport of the self-branched 1D nanostructures.

  4. Direct monolithic integration of vertical single crystalline octahedral molecular sieve nanowires on silicon

    SciTech Connect

    Carretero-Genevrier, Adrian; Oro-Sole, Judith; Gazquez, Jaume; Magen, Cesar; Miranda, Laura; Puig, Teresa; Obradors, Xavier; Ferain, Etienne; Sanchez, Clement; Rodriguez-Carvajal, Juan; Mestres, Narcis

    2013-12-13

    We developed an original strategy to produce vertical epitaxial single crystalline manganese oxide octahedral molecular sieve (OMS) nanowires with tunable pore sizes and compositions on silicon substrates by using a chemical solution deposition approach. The nanowire growth mechanism involves the use of track-etched nanoporous polymer templates combined with the controlled growth of quartz thin films at the silicon surface, which allowed OMS nanowires to stabilize and crystallize. α-quartz thin films were obtained after thermal activated crystallization of the native amorphous silica surface layer assisted by Sr2+- or Ba2+-mediated heterogeneous catalysis in the air at 800 °C. These α-quartz thin films work as a selective template for the epitaxial growth of randomly oriented vertical OMS nanowires. Furthermore, the combination of soft chemistry and epitaxial growth opens new opportunities for the effective integration of novel technological functional tunneled complex oxides nanomaterials on Si substrates.

  5. Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers.

    PubMed

    Li, Changyi; Wright, Jeremy B; Liu, Sheng; Lu, Ping; Figiel, Jeffrey J; Leung, Benjamin; Chow, Weng W; Brener, Igal; Koleske, Daniel D; Luk, Ting-Shan; Feezell, Daniel F; Brueck, S R J; Wang, George T

    2017-02-08

    We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core-shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core-shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core-shell nanowires, despite significantly shorter cavity lengths and reduced active region volume. Mode simulations show that due to the core-shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. The results show the viability of this p-i-n nonpolar core-shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV-visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.

  6. Temperature dependent electrical transport in single Ge nanowires near insulator-metal transition

    NASA Astrophysics Data System (ADS)

    Raychaudhuri, Arup Kumar; Seth, Shaili; Das, Kaustuv

    We report low temperature (4K <= T <= 300K) electrical transport in single strands of Germanium Nanowires of radius well below 50 nm. The nanowires, grown from vapour phase with Au catalyst have carrier concentrations ranging from intrinsic to near the insulator-metal transition boundary. The nanowires were characterized extensively by High Resolution Transmission Electron Microscope and established their crystalline quality. A single nanowire dispersed on a Si/SiO2 substrate was connected by Cr/Au contacts made by electron beam lithography in 2-probe / 4-probe configurations. The undoped nanowires have a room temperature resistivity (ρ) of 2 ohm.cm or more (estimated carrier concentration ~1015/cm3) and below the 25K (where it shows carrier freeze out) the ρ rises to high value of 35 ohm.cm. For nanowires with ρ <= .01 ohm.cm at 300K , low temperature ρ becomes finite, signaling transition to a metallic state with negative temperature co-efficient of ρ. The critical composition for the insulator-metal transition is more than an order higher than that observed in the bulk. At low T (<25K) resistivity data in this regime can be fitted to weak-localization form ρ =ρ0 - aTp/2 with ρ0 the NW's ~ 0.5-3.5 mohm.cm, with the exponent p ~ 3-4 as expected from theoretical predictions. Acknowldge Financial Support from Department od Science and Technology, Government of India for Sponsored Project.

  7. Nonpolar InGaN/GaN core–shell single nanowire lasers

    DOE PAGES

    Li, Changyi; Wright, Jeremy Benjamin; Liu, Sheng; ...

    2017-01-24

    We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core–shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core–shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core–shell nanowires, despite significantly shorter cavity lengths and reducedmore » active region volume. Mode simulations show that due to the core–shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. Furthermore, the results show the viability of this p-i-n nonpolar core–shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV–visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.« less

  8. Bipolar resistive switching of single gold-in-Ga2O3 nanowire.

    PubMed

    Hsu, Chia-Wei; Chou, Li-Jen

    2012-08-08

    We have fabricated single nanowire chips on gold-in-Ga(2)O(3) core-shell nanowires using the electron-beam lithography techniques and realized bipolar resistive switching characteristics having invariable set and reset voltages. We attribute the unique property of invariance to the built-in conduction path of gold core. This invariance allows us to fabricate many resistive switching cells with the same operating voltage by simple depositing repetitive metal electrodes along a single nanowire. Other characteristics of these core-shell resistive switching nanowires include comparable driving electric field with other thin film and nanowire devices and a remarkable on/off ratio more than 3 orders of magnitude at a low driving voltage of 2 V. A smaller but still impressive on/off ratio of 10 can be obtained at an even lower bias of 0.2 V. These characteristics of gold-in-Ga(2)O(3) core-shell nanowires make fabrication of future high-density resistive memory devices possible.

  9. Local detection efficiency of a NbN superconducting single photon detector explored by a scattering scanning near-field optical microscope.

    PubMed

    Wang, Qiang; Renema, Jelmer J; Engel, Andreas; van Exter, Martin P; de Dood, Michiel J A

    2015-09-21

    We propose an experiment to directly probe the local response of a superconducting single photon detector using a sharp metal tip in a scattering scanning near-field optical microscope. The optical absorption is obtained by simulating the tip-detector system, where the tip-detector is illuminated from the side, with the tip functioning as an optical antenna. The local detection efficiency is calculated by considering the recently introduced position-dependent threshold current in the detector. The calculated response for a 150 nm wide detector shows a peak close to the edge that can be spatially resolved with an estimated resolution of ∼ 20 nm, using a tip with parameters that are experimentally accessible.

  10. A four-pixel single-photon pulse-position array fabricated from WSi superconducting nanowire single-photon detectors

    SciTech Connect

    Verma, V. B. Horansky, R.; Lita, A. E.; Mirin, R. P.; Nam, S. W.; Marsili, F.; Stern, J. A.; Shaw, M. D.

    2014-02-03

    We demonstrate a scalable readout scheme for an infrared single-photon pulse-position camera consisting of WSi superconducting nanowire single-photon detectors. For an N × N array, only 2 × N wires are required to obtain the position of a detection event. As a proof-of-principle, we show results from a 2 × 2 array.

  11. Bipolar Photothermoelectric Effect Across Energy Filters in Single Nanowires.

    PubMed

    Limpert, Steven; Burke, Adam; Chen, I-Ju; Anttu, Nicklas; Lehmann, Sebastian; Fahlvik, Sofia; Bremner, Stephen; Conibeer, Gavin; Thelander, Claes; Pistol, Mats-Erik; Linke, Heiner

    2017-07-12

    The photothermoelectric (PTE) effect uses nonuniform absorption of light to produce a voltage via the Seebeck effect and is of interest for optical sensing and solar-to-electric energy conversion. However, the utility of PTE devices reported to date has been limited by the need to use a tightly focused laser spot to achieve the required, nonuniform illumination and by their dependence upon the Seebeck coefficients of the constituent materials, which exhibit limited tunability and, generally, low values. Here, we use InAs/InP heterostructure nanowires to overcome these limitations: first, we use naturally occurring absorption "hot spots" at wave mode maxima within the nanowire to achieve sharp boundaries between heated and unheated subwavelength regions of high and low absorption, allowing us to use global illumination; second, we employ carrier energy-filtering heterostructures to achieve a high Seebeck coefficient that is tunable by heterostructure design. Using these methods, we demonstrate PTE voltages of hundreds of millivolts at room temperature from a globally illuminated nanowire device. Furthermore, we find PTE currents and voltages that change polarity as a function of the wavelength of illumination due to spatial shifting of subwavelength absorption hot spots. These results indicate the feasibility of designing new types of PTE-based photodetectors, photothermoelectrics, and hot-carrier solar cells using nanowires.

  12. Self-assembled single-crystal ferromagnetic iron nanowires formed by decomposition.

    PubMed

    Mohaddes-Ardabili, L; Zheng, H; Ogale, S B; Hannoyer, B; Tian, W; Wang, J; Lofland, S E; Shinde, S R; Zhao, T; Jia, Y; Salamanca-Riba, L; Schlom, D G; Wuttig, M; Ramesh, R

    2004-08-01

    Arrays of perpendicular ferromagnetic nanowires have recently attracted considerable interest for their potential use in many areas of advanced nanotechnology. We report a simple approach to create self-assembled nanowires of alpha-Fe through the decomposition of a suitably chosen perovskite. We illustrate the principle behind this approach using the reaction 2La(0.5)Sr(0.5)FeO(3) --> LaSrFeO(4) + Fe + O(2) that occurs during the deposition of La(0.5)Sr(0.5)FeO(3) under reducing conditions. This leads to the spontaneous formation of an array of single-crystalline alpha-Fe nanowires embedded in LaSrFeO(4) matrix, which grow perpendicular to the substrate and span the entire film thickness. The diameter and spacing of the nanowires are controlled directly by deposition temperature. The nanowires show uniaxial anisotropy normal to the film plane and magnetization close to that of bulk alpha-Fe. The high magnetization and sizable coercivity of the nanowires make them desirable for high-density data storage and other magnetic-device applications.

  13. In Situ Observation of the Electrochemical Lithiation of a Single SnO2 Nanowire Electrode

    SciTech Connect

    Huang, J. Y.; Zhong, Li; Wang, Chong M.; Sullivan, John P.; Xu, Wu; Zhang, Li Q.; Mao, Scott; Hudak, N.; Liu, Xiao H.; Subramanian, Arun Kumar; Fan, Hongyou; Qi, Liang; Kushima, Akihiro; Li, Ju

    2010-11-18

    We report the first real-time transmission electron microscopy (TEM) observations of the structural evolution and phase transformation of lithium-ion battery anode during the battery charging process. A nanobattery consisting of a single SnO2 nanowire anode and an ionic liquid electrolyte was successfully constructed in a TEM. We observed that during the charging process, the SnO2 crystal was converted to Li2O glass with LixSn nanocrystalline precipitates as the reaction front propagated progressively along the nanowire. After the reaction front passed, the nanowire showed swelling, elongation, and large off-axis distortion (spiraling). Upon completion of the electrochemical charging, the nanowire showed up to 120% elongation and a 30% increase in diameter with a volume expansion of about 272%. The charging front, which separates the reacted and unreacted sections of the nanowire, contains a high density of mobile dislocations, which are continuously nucleated and annihilated at the moving reaction front. This dislocation cloud indicates large in-plane misfit stresses, and serves as structural precursor to the eventual complete solid-state amorphization. The rate of charging in our nanobatteries is found to be proportional to the inverse square root of nanowire length, indicating that a standalone nanobattery or integrated arrays of nanobatteries should have kinetic advantage over conventional battery design. The present observations also provide important mechanistic insights for the design of advanced batteries with improved performance and lifetime for broad electrical energy storage applications.

  14. Single-photon imager based on a superconducting nanowire delay line

    NASA Astrophysics Data System (ADS)

    Zhao, Qing-Yuan; Zhu, Di; Calandri, Niccolò; Dane, Andrew E.; McCaughan, Adam N.; Bellei, Francesco; Wang, Hao-Zhu; Santavicca, Daniel F.; Berggren, Karl K.

    2017-03-01

    Detecting spatial and temporal information of individual photons is critical to applications in spectroscopy, communication, biological imaging, astronomical observation and quantum-information processing. Here we demonstrate a scalable single-photon imager using a single continuous superconducting nanowire that is not only a single-photon detector but also functions as an efficient microwave delay line. In this context, photon-detection pulses are guided in the nanowire and enable the readout of the position and time of photon-absorption events from the arrival times of the detection pulses at the nanowire's two ends. Experimentally, we slowed down the velocity of pulse propagation to ∼2% of the speed of light in free space. In a 19.7 mm long nanowire that meandered across an area of 286 × 193 μm2, we were able to resolve ∼590 effective pixels with a temporal resolution of 50 ps (full width at half maximum). The nanowire imager presents a scalable approach for high-resolution photon imaging in space and time.

  15. Dual-color single-mode lasing in axially coupled organic nanowire resonators

    PubMed Central

    Zhang, Chunhuan; Zou, Chang-Ling; Dong, Haiyun; Yan, Yongli; Yao, Jiannian; Zhao, Yong Sheng

    2017-01-01

    Miniaturized lasers with multicolor output and high spectral purity are of crucial importance for yielding more compact and more versatile photonic devices. However, multicolor lasers usually operate in multimode, which largely restricts their practical applications due to the lack of an effective mode selection mechanism that is simultaneously applicable to multiple wavebands. We propose a mutual mode selection strategy to realize dual-color single-mode lasing in axially coupled cavities constructed from two distinct organic self-assembled single-crystal nanowires. The unique mode selection mechanism in the heterogeneously coupled nanowires was elucidated experimentally and theoretically. With each individual nanowire functioning as both the laser source and the mode filter for the other nanowire, dual-color single-mode lasing was successfully achieved in the axially coupled heterogeneous nanowire resonators. Furthermore, the heterogeneously coupled resonators provided multiple nanoscale output ports for delivering coherent signals with different colors, which could greatly contribute to increasing the integration level of functional photonic devices. These results advance the fundamental understanding of the lasing modulation in coupled cavity systems and offer a promising route to building multifunctional nanoscale lasers for high-level practical photonic integrations. PMID:28785731

  16. True Vapor-Liquid-Solid Process Suppresses Unintentional Carrier Doping of Single Crystalline Metal Oxide Nanowires.

    PubMed

    Anzai, Hiroshi; Suzuki, Masaru; Nagashima, Kazuki; Kanai, Masaki; Zhu, Zetao; He, Yong; Boudot, Mickaël; Zhang, Guozhu; Takahashi, Tsunaki; Kanemoto, Katsuichi; Seki, Takehito; Shibata, Naoya; Yanagida, Takeshi

    2017-08-09

    Single crystalline nanowires composed of semiconducting metal oxides formed via a vapor-liquid-solid (VLS) process exhibit an electrical conductivity even without an intentional carrier doping, although these stoichiometric metal oxides are ideally insulators. Suppressing this unintentional doping effect has been a challenging issue not only for metal oxide nanowires but also for various nanostructured metal oxides toward their semiconductor applications. Here we demonstrate that a pure VLS crystal growth, which occurs only at liquid-solid (LS) interface, substantially suppresses an unintentional doping of single crystalline SnO2 nanowires. By strictly tailoring the crystal growth interface of VLS process, we found the gigantic difference of electrical conduction (up to 7 orders of magnitude) between nanowires formed only at LS interface and those formed at both LS and vapor-solid (VS) interfaces. On the basis of investigations with spatially resolved single nanowire electrical measurements, plane-view electron energy-loss spectroscopy, and molecular dynamics simulations, we reveal the gigantic suppression of unintentional carrier doping only for the crystal grown at LS interface due to the higher annealing effect at LS interface compared with that grown at VS interface. These implications will be a foundation to design the semiconducting properties of various nanostructured metal oxides.

  17. Single ZnO nanowire ultraviolet detector with free-recovered contact performance

    NASA Astrophysics Data System (ADS)

    Wang, Feng; Wang, Liang; Li, Xin; Li, Zhenhu; Feng, Shuanglong; Lu, Wenqiang

    2016-06-01

    In this paper, a single ZnO nanowire ultraviolet detector was firstly fabricated by a single ZnO nanowire and silver paint, which can be free-recovered from a Schottky contact to an Ohmic contact. Key effect factors such as the illumination and bias voltage of the free-recovered performance were also investigated. Meanwhile, the reason for the recoverable contact was further confirmed in detail. This result is beneficial for developing the highly sensitive ZnO based ultraviolet detector.

  18. Investigation of dark counts in innovative materials for superconducting nanowire single-photon detector applications

    NASA Astrophysics Data System (ADS)

    Parlato, L.; Ejrnaes, M.; Nasti, U.; Arpaia, R.; Taino, T.; Bauch, T.; Myoren, H.; Sobolewski, Roman; Tafuri, F.; Lombardi, F.; Cristiano, R.; Pepe, G.

    2017-05-01

    The phenomenon of dark counts in nanostripes of different superconductor systems such as high-temperature superconducting YBa2Cu3O7-x and superconductor/ferromagnet hybrids consisting of either NbN/NiCu or YBa2Cu3O7- x/L0.7Sr0.3MnO3 bilayers have been investigated. For NbN/NiCu the rate of dark-count transients have been reduced with respect to pure NbN nanostripes and the events were dominated by a single vortex entry from the edge of the stripe. In the case of nanostripes based on YBa2Cu3O7-x, we have found that thermal activation of vortices was also, apparently, responsible for triggering dark-count signals.

  19. In Situ Investigation of Li and Na Ion Transport with Single Nanowire Electrochemical Devices.

    PubMed

    Xu, Xu; Yan, Mengyu; Tian, Xiaocong; Yang, Chuchu; Shi, Mengzhu; Wei, Qiulong; Xu, Lin; Mai, Liqiang

    2015-06-10

    In the past decades, Li ion batteries are widely considered to be the most promising rechargeable batteries for the rapid development of mobile devices and electric vehicles. There arouses great interest in Na ion batteries, especially in the field of static grid storage due to their much lower production cost compared with Li ion batteries. However, the fundamental mechanism of Li and Na ion transport in nanoscale electrodes of batteries has been rarely experimentally explored. This insight can guide the development and optimization of high-performance electrode materials. In this work, single nanowire devices with multicontacts are designed to obtain detailed information during the electrochemical reactions. This unique platform is employed to in situ investigate and compare the transport properties of Li and Na ions at a single nanowire level. To give different confinement for ions and electrons during the electrochemical processes, two different configurations of nanowire electrode are proposed; one is to fully immerse the nanowire in the electrolyte, and the other is by using photoresist to cover the nanowire with only one end exposed. For both configurations, the conductivity of nanowire decreases after intercalation/deintercalation for both Li and Na ions, indicating that they share the similar electrochemical reaction mechanisms in layered electrodes. However, the conductivity degradation and structure destruction for Na ions is more severe than those of Li ions during the electrochemical processes, which mainly results from the much larger volume of Na ions and greater energy barrier encountered by the limited layered spaces. Moreover, the battery performances of coin cells are compared to further confirm this conclusion. The present work provides a unique platform for in situ electrochemical and electrical probing, which will push the fundamental and practical research of nanowire electrode materials for energy storage applications.

  20. A simple route to the synthesis of single crystalline copper metagermanate nanowires

    SciTech Connect

    Pei, L.Z.; Zhao, H.S.; Tan, W.; Yu, H.Y.; Chen, Y.W.; Zhang Qianfeng; Fan, C.G.

    2009-12-15

    Single crystalline copper metagermanate (CuGeO{sub 3}) nanowires with the diameter of 30-300 nm and length of longer than 100 {mu}m have been prepared by a simple hydrothermal deposition route. X-ray diffraction (XRD), selected area electron diffraction (SAED), high-resolution transmission electron microscopy (HRTEM) and Raman analyses confirm that the nanowires are orthorhombic single crystals with a main growth direction along <101>. Room temperature photoluminescence (PL) measurement shows a strong blue emission peak at 442 nm with a broad emission band. The blue emission may be ascribed to radiative recombination of oxygen vacancies and oxygen-germanium vacancies. The formation process of CuGeO{sub 3} nanowires is also discussed.

  1. Field-effect modulation of Seebeck coefficient in single PbSe nanowires.

    PubMed

    Liang, Wenjie; Hochbaum, Allon I; Fardy, Melissa; Rabin, Oded; Zhang, Minjuan; Yang, Peidong

    2009-04-01

    In this Letter, we present a novel strategy to control the thermoelectric properties of individual PbSe nanowires. Using a field-effect gated device, we were able to tune the Seebeck coefficient of single PbSe nanowires from 64 to 193 microV x K(-1). This direct electrical field control of sigma and S suggests a powerful strategy for optimizing ZT in thermoelectric devices. These results represent the first demonstration of field-effect modulation of the thermoelectric figure of merit in a single semiconductor nanowire. This novel strategy for thermoelectric property modulation could prove especially important in optimizing the thermoelectric properties of semiconductors where reproducible doping is difficult to achieve.

  2. Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

    SciTech Connect

    Llobet, Jordi; Pérez-Murano, Francesc E-mail: z.durrani@imperial.ac.uk; Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K. E-mail: z.durrani@imperial.ac.uk; Arbiol, Jordi

    2015-11-30

    Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.

  3. Growth and Characterization of Single Crystal Ga2O3 Nanowires and Nano-Ribbons for Sensing Applications

    DTIC Science & Technology

    2005-01-01

    Growth and characterization of single crystal Ga2O3 nanowires and nano-ribbons for sensing applications. S.M. Prokes, W.E. Carlos and O.J...Glembocki US Naval Research Laboratory 4555 Overlook Ave. SW Washington DC 20375 Keywords: Ga2O3 nanowires, nano-ribbons, VLS growth, Raman...spectroscopy, electron spin resonance, sensing. ABSTRACT The growth of monoclinic Ga2O3 nanowires, nano-ribbons and nano-sheets has been

  4. Characterizations of Ohmic and Schottky-behaving contacts of a single ZnO nanowire.

    PubMed

    Bercu, Bogdan; Geng, Wei; Simonetti, Olivier; Kostcheev, Sergei; Sartel, Corinne; Sallet, Vincent; Lérondel, Gilles; Molinari, Michaël; Giraudet, Louis; Couteau, Christophe

    2013-10-18

    Current-voltage and Kelvin probe force microscopy (KPFM) measurements were performed on single ZnO nanowires. Measurements are shown to be strongly correlated with the contact behavior, either Ohmic or diode-like. The ZnO nanowires were obtained by metallo-organic chemical vapor deposition (MOCVD) and contacted using electronic-beam lithography. Depending on the contact geometry, good quality Ohmic contacts (linear I-V behavior) or non-linear (diode-like) contacts were obtained. Current-voltage and KPFM measurements on both types of contacted ZnO nanowires were performed in order to investigate their behavior. A clear correlation could be established between the I-V curve, the electrical potential profile along the device and the nanowire geometry. Some arguments supporting this behavior are given based on technological issues and on depletion region extension. This work will help to better understand the electrical behavior of Ohmic contacts on single ZnO nanowires, for future applications in nanoscale field-effect transistors and nano-photodetectors.

  5. Performance-limiting factors for GaAs-based single nanowire photovoltaics.

    PubMed

    Wang, Xufeng; Khan, Mohammad Ryyan; Lundstrom, Mark; Bermel, Peter

    2014-03-10

    GaAs nanowires (NWs) offer the possibility of decoupling light absorption from charge transport for high-performance photovoltaic (PV) devices. However, it is still an open question as to whether these devices can exceed the Shockley-Queisser efficiency limit for single-junction PV. In this work, single standing GaAs-based nanowire solar cells in both radial and vertical junction configurations is analyzed and compared to a planar thin-film design. By using a self-consistent, electrical-optically coupled 3D simulator, we show the design principles for nanowire and planar solar cells are significantly different; nanowire solar cells are vulnerable to surface and contact recombination, while planar solar cells suffer significant losses due to imperfect backside mirror reflection. Overall, the ultimate efficiency of the GaAs nanowire solar cell with radial and vertical junction is not expected to exceed that of the thin-film design, with both staying below the Shockley-Queisser limit.

  6. Magnetoresistance characteristics in individual Fe{sub 3}O{sub 4} single crystal nanowire

    SciTech Connect

    Reddy, K. M. Punnoose, Alex; Hanna, Charles; Padture, Nitin P.

    2015-05-07

    We report on the magnetoresistance (MR) and electron transport measurements observed on a single crystal magnetite nanowire prepared using a hydrothermal synthesis method. High-resolution electron microscopy revealed the single crystal magnetite nanowires with 80–120 nm thickness and up to 8 μm in length. Magnetic measurements showed the typical Verwey transition around 120 K with a 100 Oe room temperature coercivity and 45 emu/g saturation magnetization, which are comparable to bulk magnetite. Electrical resistance measurements in 5–300 K temperature range were performed by scanning gate voltage and varying applied magnetic field. Electrical resistivity of the nanowire was found to be around 5 × 10{sup −4} Ω m, slightly higher than the bulk and has activation energy of 0.07 eV. A negative MR of about 0.7% is observed for as-synthesized nanowires at 0.3 T applied field. MR scaled with increasing applied magnetic field representing the field-induced alignment of magnetic domain. These results are attributed to the spin-polarized electron transport across the antiphase boundaries, which implicate promising applications for nanowires in magnetoelectronics.

  7. Single Material Band Gap Engineering in GaAs Nanowires

    SciTech Connect

    Spirkoska, D.; Abstreiter, G.; Efros, A.; Conesa-Boj, S.; Morante, J. R.; Arbiol, J.; Fontcuberta i Morral, A.

    2011-12-23

    The structural and optical properties of GaAs nanowire with mixed zinc-blende/wurtzite structure are presented. High resolution transmission electron microscopy indicates the presence of a variety of shorter and longer segments of zinc-blende or wurtzite crystal phases. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV. The downward shift of the emission peaks can be understood by carrier confinement at the wurtzite/zinc-blende heterojunction, in quantum wells and in random short period superlattices existent in these nanowires, assuming the theoretical staggered band-offset between wurtzite and zinc-blende GaAs.

  8. High-frequency characterization and modeling of single metallic nanowires

    NASA Astrophysics Data System (ADS)

    Hsu, Chuan-Lun; Ardila, Gustavo; Benech, Philippe

    2013-07-01

    The transmission line characteristics of an individual aluminum metallic nanowire up to 100 GHz are presented in this paper. We have built a reliable framework for characterizing such nanowires using a specially designed coplanar waveguide platform. We systematically estimate the pad parasitics, contact impedance and transmission line parameters based on an equivalent circuit model and cascade-based de-embedding theory. This is the first time that such external parasitic elements have been successfully removed from a nanoscale transmission line. The extracted frequency-dependent electrical responses show good signal levels and a high degree of reproducibility. Contribution to the Topical Issue “International Semiconductor Conference Dresden-Grenoble - ISCDG 2012”, Edited by Gérard Ghibaudo, Francis Balestra and Simon Deleonibus.

  9. Single particle plasmon spectroscopy of silver nanowires and gold nanorods.

    PubMed

    N'Gom, Moussa; Ringnalda, Jan; Mansfield, John F; Agarwal, Ashish; Kotov, Nicholas; Zaluzec, Nestor J; Norris, Theodore B

    2008-10-01

    The excitation of surface plasmons in individual silver nanowires and gold nanorods is investigated by means of high-resolution electron energy loss spectroscopy in a transmission electron microscope. The transverse and longitudinal modes of these nanostructures are resolved, and the size variation of the plasmon peaks is studied. The effect of electromagnetic coupling between closely spaced nanoparticles is also observed. Finally, the relation between energy-loss measurements and optical spectroscopy of nanoparticle plasmon modes is discussed.

  10. Resistance of Single Ag Nanowire Junctions and Their Role in the Conductivity of Nanowire Networks.

    PubMed

    Bellew, Allen T; Manning, Hugh G; Gomes da Rocha, Claudia; Ferreira, Mauro S; Boland, John J

    2015-11-24

    Networks of silver nanowires appear set to replace expensive indium tin oxide as the transparent conducting electrode material in next generation devices. The success of this approach depends on optimizing the material conductivity, which until now has largely focused on minimizing the junction resistance between wires. However, there have been no detailed reports on what the junction resistance is, nor is there a known benchmark for the minimum attainable sheet resistance of an optimized network. In this paper, we present junction resistance measurements of individual silver nanowire junctions, producing for the first time a distribution of junction resistance values and conclusively demonstrating that the junction contribution to the overall resistance can be reduced beyond that of the wires through standard processing techniques. We find that this distribution shows the presence of a small percentage (6%) of high-resistance junctions, and we show how these may impact the performance of network-based materials. Finally, through combining experiment with a rigorous model, we demonstrate the important role played by the network skeleton and the specific connectivity of the network in determining network performance.

  11. Bright single-photon sources in bottom-up tailored nanowires

    PubMed Central

    Reimer, Michael E.; Bulgarini, Gabriele; Akopian, Nika; Hocevar, Moïra; Bavinck, Maaike Bouwes; Verheijen, Marcel A.; Bakkers, Erik P.A.M.; Kouwenhoven, Leo P.; Zwiller, Val

    2012-01-01

    The ability to achieve near-unity light-extraction efficiency is necessary for a truly deterministic single-photon source. The most promising method to reach such high efficiencies is based on embedding single-photon emitters in tapered photonic waveguides defined by top-down etching techniques. However, light-extraction efficiencies in current top-down approaches are limited by fabrication imperfections and etching-induced defects. The efficiency is further tempered by randomly positioned off-axis quantum emitters. Here we present perfectly positioned single quantum dots on the axis of a tailored nanowire waveguide using bottom-up growth. In comparison to quantum dots in nanowires without waveguides, we demonstrate a 24-fold enhancement in the single-photon flux, corresponding to a light-extraction efficiency of 42%. Such high efficiencies in one-dimensional nanowires are promising to transfer quantum information over large distances between remote stationary qubits using flying qubits within the same nanowire p–n junction. PMID:22415828

  12. A near-infrared 64-pixel superconducting nanowire single photon detector array with integrated multiplexed readout

    SciTech Connect

    Allman, M. S. Verma, V. B.; Stevens, M.; Gerrits, T.; Horansky, R. D.; Lita, A. E.; Mirin, R.; Nam, S. W.; Marsili, F.; Beyer, A.; Shaw, M. D.; Kumor, D.

    2015-05-11

    We demonstrate a 64-pixel free-space-coupled array of superconducting nanowire single photon detectors optimized for high detection efficiency in the near-infrared range. An integrated, readily scalable, multiplexed readout scheme is employed to reduce the number of readout lines to 16. The cryogenic, optical, and electronic packaging to read out the array as well as characterization measurements are discussed.

  13. One-dimensional weak antilocalization in single-crystal Bi2Te3 nanowires

    PubMed Central

    Ning, Wei; Du, Haifeng; Kong, Fengyu; Yang, Jiyong; Han, Yuyan; Tian, Mingliang; Zhang, Yuheng

    2013-01-01

    Angle-dependent magnetoconductance was measured on an individual surface-curved Bi2Te3 single-crystal nanowire fabricated by electrochemical deposition, where the evolution of surface conduction with wire diameters was investigated. It was found that the magnetoconductance of these nanowires in low field regime can be well described by one-dimensional (1D) weak antilocalization (WAL) model, where the dephasing length of the electrons follows T−1/3 dependence but insensitive to the wire diameter. Meanwhile, such a 1D surface WAL was found to be enhanced significantly with the decrease of the wire diameter. PMID:23535588

  14. Proton irradiation effects on the thermoelectric properties in single-crystalline Bi nanowires

    SciTech Connect

    Chang, Taehoo; Kim, Jeongmin; Song, Min-Jung; Lee, Wooyoung

    2015-05-15

    The effects of proton irradiation on the thermoelectric properties of Bi nanowires (Bi-NWs) were investigated. Single crystalline Bi-NWs were grown by the on-film formation of nanowires method. The devices based on individual Bi-NWs were irradiated with protons at different energies. The total number of displaced atoms was estimated using the Kinchin-Pease displacement model. The electric conductivity and Seebeck coefficient in the Bi-NW devices were investigated before and after proton irradiation at different temperatures. Although the Seebeck coefficient remained stable at various irradiation energies, the electrical conductivity significantly declined with increasing proton energy up to 40 MeV.

  15. Self-similarity of single-channel transmission for electron transport in nanowires.

    PubMed

    Gelin, M F; Li, Zhenyu; Kosov, D S

    2006-03-14

    We demonstrate that the single-channel transmission in the resonance tunneling regime exhibits self-similarity as a function of the nanowire length and the energy of incident electrons. The self-similarity is used to design the nonlinear transformation of the nanowire length and energy which, on the basis of known values of transmission for a certain region on the energy-length plane, yields transmissions for other regions on this plane. Test calculations with a one-dimensional tight-binding model illustrate the described transformations. Density function theory based transport calculations of Na atomic wires confirm the existence of the self-similarity in the transmission.

  16. Stress induced growth of Sn nanowires in a single step by sputtering method

    SciTech Connect

    Yadav, A. Kothari, D. C.; Patel, N.; Miotello, A.

    2015-06-24

    Sn nanowires in aluminum film have been synthesized in a single step by co-sputtering of Al and Sn targets. Due to immiscibility of Sn and Al, co-sputtering leads to generation of stress in the composite film. In order to attain thermodynamic equilibrium, Sn separates from Al and diffuses towards the grain boundaries. External perturbation due to ambient atmosphere leads to corrosion at the grain boundaries forming pits which provide path for Sn to evolve. Owing to this, extrusion of Sn nanowires from Al film occurs to release the residual stress in the film.

  17. Study of electrical properties of single GaN nanowires grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Mozharov, A. M.; Komissarenko, F. E.; Vasiliev, A. A.; Bolshakov, A. D.; Moiseev, E. I.; Mukhin, M. S.; Cirlin, G. E.; Mukhin, I. S.

    2016-08-01

    Electrical properties of single GaN nanowires grown by means of molecular beam epitaxy with N-plasma source were studied. Ohmic contacts connected to single n-type GaN wires were produced by the combination of electron beam lithography, metal vacuum evaporation and rapid thermal annealing technique. The optimal annealing temperature to produce ohmic contacts implemented in the form of Ti/Al/Ti/Au stack has been determined. By means of 2-terminal measurement wiring diagram the conductivity of single NW has been obtained for NWs with different growth parameters. The method of MESFET measurement circuit layout of single GaN nanowires (NWs) has been developed. In accordance with performed numerical calculation, free carriers' concentration and mobility of single NWs could be independently estimated using MESFET structure.

  18. An electrically driven quantum dot-in-nanowire visible single photon source operating up to 150 K

    NASA Astrophysics Data System (ADS)

    Deshpande, Saniya; Bhattacharya, Pallab

    2013-12-01

    We demonstrate electrically pumped single photon emission up to 150 K from a single InGaN quantum dot embedded in a GaN nanowire junction diode. The InGaN dot-in-nanowire p-n junctions were grown on silicon by molecular beam epitaxy. The exciton electroluminescence from individual dot-in-nanowires is in the green spectral range (λ ˜ 520 nm) and is detectable up to 150 K. Second order autocorrelation measurements performed at the exciton energy at an ambient temperature of 125 K show a background corrected g(2)(0) equal to 0.35, indicating dominant single photon emission. The steady state nanowire temperature under these conditions is estimated to be 150 K due to Joule heating induced by the large nanowire series resistance. Time resolved photoluminescence measurements yield an exciton radiative lifetime of 1.1 ns.

  19. An electrically driven quantum dot-in-nanowire visible single photon source operating up to 150 K

    SciTech Connect

    Deshpande, Saniya; Bhattacharya, Pallab

    2013-12-09

    We demonstrate electrically pumped single photon emission up to 150 K from a single InGaN quantum dot embedded in a GaN nanowire junction diode. The InGaN dot-in-nanowire p-n junctions were grown on silicon by molecular beam epitaxy. The exciton electroluminescence from individual dot-in-nanowires is in the green spectral range (λ ∼ 520 nm) and is detectable up to 150 K. Second order autocorrelation measurements performed at the exciton energy at an ambient temperature of 125 K show a background corrected g{sup (2)}(0) equal to 0.35, indicating dominant single photon emission. The steady state nanowire temperature under these conditions is estimated to be 150 K due to Joule heating induced by the large nanowire series resistance. Time resolved photoluminescence measurements yield an exciton radiative lifetime of 1.1 ns.

  20. Inhomogeneity-induced timing jitter of superconducting nanowire single-photon detectors

    NASA Astrophysics Data System (ADS)

    Cheng, Yuhao; Gu, Chao; Hu, Xiaolong

    2017-08-01

    We show that the distributed electronic and geometric inhomogeneity of a superconducting nanowire induces timing jitter of the resulting single-photon detector and this timing jitter could be further exacerbated by localized constrictions. Due to the distributed inhomogeneity, photons absorbed at different locations of the nanowire generate hotspots that "sense" different local properties of the nanowire during the electro-thermal evolutions and thereby produce varying time delays. The localized constrictions limit the bias current, slow down the Joule-heating process, and consequently increase the average time delays and the inhomogeneity-induced timing jitter. We combine the Monte-Carlo method and the electro-thermal simulation to illustrate the inhomogeneity-induced timing jitter.

  1. Light-gated single CdSe nanowire transistor: photocurrent saturation and band gap extraction

    NASA Astrophysics Data System (ADS)

    Zhang, Yang; Chakraborty, Ritun; Kudera, Stefan; Krahne, Roman

    2015-11-01

    CdSe nanowires are popular building blocks for many optoelectronic devices mainly owing to their direct band gap in the visible range of the spectrum. Here we investigate the optoelectronic properties of single CdSe nanowires fabricated by colloidal synthesis, in terms of their photocurrent-voltage characteristics and photoconductivity spectra recorded at 300 and 18 K. The photocurrent is identified as the secondary photocurrent, which gives rise to a photoconductive gain of 35. We observe a saturation of the photocurrent beyond a certain voltage bias that can be related to the finite drift velocity of electrons. From the photoconductivity spectra, we determine the band gap energy of the nanowires as 1.728 eV, and we resolve low-energy peaks that can be associated with sub-bandgap states.

  2. Single-crystal nanowires grown via electron-beam-induced deposition

    SciTech Connect

    Klein, Kate L; Randolph, Steven J; Fowlkes, Jason Davidson; Allard Jr, Lawrence Frederick; Meyer III, Harry M; Simpson, Michael L; Rack, Philip D

    2008-01-01

    Electron-beam-induced deposition (EBID) is a useful technique for direct-writing of 3-dimensional dielectric, semiconductor, and metallic materials with nanoscale precision and resolution. The EBID process, however, has been limited in many cases because precursor byproducts (typically from organic precursors like W(CO)6) are incorporated into the deposited material resulting in contaminated and amorphous structures. In this manuscript, we have investigated the structure and composition of EBID tungsten nanostructures as-deposited from a tungsten hexafluoride (WF6) precursor. High-resolution transmission electron microscopy, electron diffraction and electron spectroscopy were employed to determine the effects that the electron beam scanning conditions have on the deposit characteristics. The results show that slow, one-dimensional lateral scanning produces textured -tungsten nanowire cores surrounded by an oxide secondary layer, while stationary vertical growth leads to single-crystal [100]-oriented W3O nanowires. Furthermore we correlate how the growth kinetics affect the resultant nanowire structure and composition.

  3. Unambiguous identification of recombination lines in single zinc-blende ZnSe nanowires in direct relation to their microstructure.

    PubMed

    Saxena, Ankur; Pan, Qi; Ruda, Harry E

    2013-03-15

    We present results on the low-temperature photoluminescence characterization of individual ZnSe nanowires, whose crystal structure was determined to be zinc-blende by transmission electron microscopy on the same individual nanowires as were studied optically. The photoluminescence response from single ZnSe nanowires was found to be dominated by excitonic emission due to native point defects, while no emission peaks related to the unintentional impurities were detected. Two strong photoluminescence lines were observed at 2.785 eV and 2.780 eV, assigned to the excitons bound to deep neutral acceptors related to the vacancies of Zn (V(Zn)) and complexes of V(Zn), respectively. Another recombination peak at 2.800 eV related to the free exciton emission in ZnSe was also observed. Longitudinal optical-phonon replicas of up to three orders were seen for both lines, and the average number of emitted phonons was also determined. The excitonic emission linewidths of 1.5 meV were observed from individual nanowires, which are the narrowest excitonic linewidths reported so far for ZnSe nanowires. The optical response from a single nanowire was also compared to that from a bundle of nanowires, and it was found that the linewidths of excitonic emission from the bundle of nanowires were slightly larger than those from single nanowires, due to the effects of ensemble broadening. It is also suggested that in the case of a bundle of nanowires, the broadening is limited by the nanowire which exhibits the largest excitonic linewidth.

  4. Ultrafast room temperature single-photon source from nanowire-quantum dots.

    PubMed

    Bounouar, S; Elouneg-Jamroz, M; Hertog, M den; Morchutt, C; Bellet-Amalric, E; André, R; Bougerol, C; Genuist, Y; Poizat, J-Ph; Tatarenko, S; Kheng, K

    2012-06-13

    Epitaxial semiconductor quantum dots are particularly promising as realistic single-photon sources for their compatibility with manufacturing techniques and possibility to be implemented in compact devices. Here, we demonstrate for the first time single-photon emission up to room temperature from an epitaxial quantum dot inserted in a nanowire, namely a CdSe slice in a ZnSe nanowire. The exciton and biexciton lines can still be resolved at room temperature and the biexciton turns out to be the most appropriate transition for single-photon emission due to a large nonradiative decay of the bright exciton to dark exciton states. With an intrinsically short radiative decay time (≈300 ps) this system is the fastest room temperature single-photon emitter, allowing potentially gigahertz repetition rates.

  5. Salt flux synthesis of single and bimetallic carbide nanowires

    NASA Astrophysics Data System (ADS)

    Leonard, Brian M.; Waetzig, Gregory R.; Clouser, Dale A.; Schmuecker, Samantha M.; Harris, Daniel P.; Stacy, John M.; Duffee, Kyle D.; Wan, Cheng

    2016-07-01

    Metal carbide compounds have a broad range of interesting properties and are some of the hardest and highest melting point compounds known. However, their high melting points force very high reaction temperatures and thus limit the formation of high surface area nanomaterials. To avoid the extreme synthesis temperatures commonly associated with these materials, a new salt flux technique has been employed to reduce reaction temperatures and form these materials in the nanometer regime. Additionally, the use of multiwall carbon nanotubes as a reactant further reduces the diffusion distance and provides a template for the final carbide materials. The metal carbide compounds produced through this low temperature salt flux technique maintain the nanowire morphology of the carbon nanotubes but increase in size to ˜15-20 nm diameter due to the incorporation of metal in the carbon lattice. These nano-carbides not only have nanowire like shape but also have much higher surface areas than traditionally prepared metal carbides. Finally, bimetallic carbides with composition control can be produced with this method by simply using two metal precursors in the reaction. This method provides the ability to produce nano sized metal carbide materials with size, morphology, and composition control and will allow for these compounds to be synthesized and studied in a whole new size and temperature regime.

  6. Electrical properties of ZnO single nanowires.

    PubMed

    Stiller, Markus; Barzola-Quiquia, José; Zoraghi, Mahsa; Esquinazi, Pablo

    2015-10-02

    We have investigated the electrical resistance R(T) of ZnO nanowires of ≈ 400 nm diameter as a function of temperature, between 30 K and 300 K, and frequency in the range 40 Hz to 30 MHz. The measurements were done on the as-prepared and after low-energy proton implantation at room temperature. The temperature dependence of the resistance of the wire, before proton implantation, can be well described by two processes in parallel. One process is the fluctuation induced tunneling conductance (FITC) and the other the usual thermally activated process. The existence of a tunneling conductance was also observed in the current-voltage ([Formula: see text]) results, and can be well described by the FITC model. Impedance spectroscopy measurements in the as-prepared state and at room temperature, indicate and support the idea of two contributions of these two transport processes in the nanowires. Electron backscatter diffraction confirms the existence of different crystalline regions. After the implantation of H(+) a third thermally activated process is found that can be explained by taking into account the impurity band splitting due to proton implantation.

  7. One step solution synthesis towards ultra-thin and uniform single-crystalline ZnO nanowires

    NASA Astrophysics Data System (ADS)

    Ho, G. W.; Wong, A. S. W.

    2007-03-01

    Bundles of high-aspect-ratio single-crystalline ZnO nanowires were fabricated by a single-step mild hydrothermal condition without the use of a seeding layer, thus eliminating an annealing step. The growth yields nanowires of high aspect ratio (>200). No significant lateral growth takes place with prolonged reaction time. The morphology and aspect ratio of the final products depend on the concentration of the precursors; a highly water-soluble tetradentate cyclic tertiary amine and zinc nitrate system. The nanowires grow along the [0001] direction and have an average width of <10 nm and a narrow distribution of ±5 nm. Photoluminescence measurements of the ultra-thin nanowires exhibit a strong band-edge emission at room temperature. The highly crystalline sub tens of nanometer scale diameter nanowires can, in combination, be a good one-dimensional candidate to study optical and electronic properties.

  8. Monolithic carbon structures including suspended single nanowires and nanomeshes as a sensor platform

    PubMed Central

    2013-01-01

    With the development of nanomaterial-based nanodevices, it became inevitable to develop cost-effective and simple nanofabrication technologies enabling the formation of nanomaterial assembly in a controllable manner. Herein, we present suspended monolithic carbon single nanowires and nanomeshes bridging two bulk carbon posts, fabricated in a designed manner using two successive UV exposure steps and a single pyrolysis step. The pyrolysis step is accompanied with a significant volume reduction, resulting in the shrinkage of micro-sized photoresist structures into nanoscale carbon structures. Even with the significant elongation of the suspended carbon nanowire induced by the volume reduction of the bulk carbon posts, the resultant tensional stress along the nanowire is not significant but grows along the wire thickness; this tensional stress gradient and the bent supports of the bridge-like carbon nanowire enhance structural robustness and alleviate the stiction problem that suspended nanostructures frequently experience. The feasibility of the suspended carbon nanostructures as a sensor platform was demonstrated by testing its electrochemical behavior, conductivity-temperature relationship, and hydrogen gas sensing capability. PMID:24256942

  9. Topological surface transport properties of single-crystalline SnTe nanowire.

    PubMed

    Safdar, Muhammad; Wang, Qisheng; Mirza, Misbah; Wang, Zhenxing; Xu, Kai; He, Jun

    2013-01-01

    SnTe has attracted worldwide interest since its theoretical predication as topological crystalline insulator. Because of promising applications of one-dimensional topological insulator in nanoscale electronics and spintronics device, it is very important to realize the observation of topological surface states in one-dimensional SnTe. In this work, for the first time we successfully synthesized high-quality single crystalline SnTe nanowire via gold-catalyst chemical vapor deposition method. Systematical investigation of Aharonov-Bohm and Shubnikov-de Haas oscillations in single SnTe nanowire prove the existence of Dirac electrons. Further analysis of temperature-dependent Shubnikov-de Haas oscillations gives valuable information of cyclotron mass, mean-free path, and mobility of Dirac electrons in SnTe nanowire. Our study provides the experimental groundwork for research in low-dimensional topological crystalline insulator materials and paves the way for the application of SnTe nanowire in nanoelectronics and spintronics device.

  10. Ultrathin platinum nanowires grown on single-layered nickel hydroxide with high hydrogen evolution activity

    NASA Astrophysics Data System (ADS)

    Yin, Huajie; Zhao, Shenlong; Zhao, Kun; Muqsit, Abdul; Tang, Hongjie; Chang, Lin; Zhao, Huijun; Gao, Yan; Tang, Zhiyong

    2015-03-01

    Design and synthesis of effective electrocatalysts for hydrogen evolution reaction in alkaline environments is critical to reduce energy losses in alkaline water electrolysis. Here we report a hybrid nanomaterial comprising of one-dimensional ultrathin platinum nanowires grown on two-dimensional single-layered nickel hydroxide. Judicious surface chemistry to generate the fully exfoliated nickel hydroxide single layers is explored to be the key for controllable growth of ultrathin platinum nanowires with diameters of about 1.8 nm. Impressively, this hybrid nanomaterial exhibits superior electrocatalytic activity for hydrogen evolution reaction in alkaline solution, which outperforms currently reported catalysts, and the obviously improved catalytic stability. We believe that this work may lead towards the development of single-layered metal hydroxide-based hybrid materials for applications in catalysis and energy conversion.

  11. The Influence of Short-Range Correlation on the Phonon Confinement of a Single ZnO Nanowire.

    PubMed

    Shih, Po-Hsun; Wu, Sheng Yun

    2017-12-01

    Plenty of researches have been performed to probe the diverse properties of ZnO nanowires, but only a few have focused on the physical properties of a single nanowire since to analyze the optical confinement and their correlation lengths along a single nanowire is difficult. In this study, a single ZnO nanowire was synthesized using a Ti-assisted chemical vapor deposition (CVD) method to avoid the appearance of catalytic contamination. Confocal Raman spectroscopy is a powerful tool for probing the phonon confinement effect in a single ZnO nanowire. A confinement model was used to calculate the correlation lengths along the growth direction. The Raman mapping of ZnO nanowires was obtained by a confocal Raman spectrometer. A phonon confinement model was used to fit the Raman curves of the E2 mode and to obtain the correlation lengths along the growth direction of the ZnO nanowire. The correlation lengths are related to the phonon confined region by boundaries and/or defects.

  12. Electrically injected near-infrared light emission from single InN nanowire p-i-n diode

    SciTech Connect

    Le, Binh Huy; Zhao, Songrui; Tran, Nhung Hong; Mi, Zetian

    2014-12-08

    We report on the achievement of electroluminescence emission of single InN p-i-n nanowire devices. InN p-i-n nanowire structures were grown directly on Si substrate by plasma-assisted molecular beam epitaxy and subsequently transferred to foreign substrate for the fabrication of single nanowire light emitting diodes. Electroluminescence emission with a peak energy of 0.71 eV (1.75 μm) was observed at 77 K. The measurement of near-bandgap electroluminescence provides unambiguous evidence for the achievement of p-type conduction of InN.

  13. Nanowires: Quantitative Probing of Cu(2+) Ions Naturally Present in Single Living Cells (Adv. Mater. 21/2016).

    PubMed

    Lee, Junho; Lee, Hwa-Rim; Pyo, Jaeyeon; Jung, Youngseob; Seo, Ji-Young; Ryu, Hye Guk; Kim, Kyong-Tai; Je, Jung Ho

    2016-06-01

    Quantitative probing of the Cu(2+) ions naturally present in single living cells is accomplished by a probe made from a quantum-dot-embedded-nanowire waveguide. After inserting the active nanowire-based waveguide probe into single living cells, J. H. Je and co-workers directly observe photoluminescence (PL) quenching of the embedded quantum dots by the Cu(2+) ions diffused into the probe as described on page 4071. This results in quantitative measurement of intracellular Cu(2+) ions.

  14. In Situ Observation of the Electrochemical Lithiation of a Single SnO2 Nanowire Electrode

    SciTech Connect

    Huang, J Y; Zhong, L; Wang, C M; Sullivan, J P; Xu, W; Zhang, L Q; Mao, S X; Hudak, N S; Liu, X H; Subramanian, A; Fan, H Y; Qi, L A; Kushima, A; Li, J

    2010-12-09

    We report the creation of a nanoscale electrochemical device inside a transmission electron microscope—consisting of a single tin dioxide (SnO{sub 2}) nanowire anode, an ionic liquid electrolyte, and a bulk lithium cobalt dioxide (LiCoO{sub 2}) cathode—and the in situ observation of the lithiation of the SnO{sub 2} nanowire during electrochemical charging. Upon charging, a reaction front propagated progressively along the nanowire, causing the nanowire to swell, elongate, and spiral. The reaction front is a “Medusa zone” containing a high density of mobile dislocations, which are continuously nucleated and absorbed at the moving front. This dislocation cloud indicates large in-plane misfit stresses and is a structural precursor to electrochemically driven solid-state amorphization. Because lithiation-induced volume expansion, plasticity, and pulverization of electrode materials are the major mechanical effects that plague the performance and lifetime of high-capacity anodes in lithium-ion batteries, our observations provide important mechanistic insight for the design of advanced batteries.

  15. Exciton-Exciton Annihilation in Copper-Phthalocyanine Single-Crystal Nanowires

    SciTech Connect

    Ma, Yingzhong; Xiao, Kai; Shaw, Robert W

    2012-01-01

    Femtosecond one-color pump-probe spectroscopy was applied to study exciton dynamics in single-crystal copper-phthalocyanine (CuPc) nanowires grown on an opaque silicon substrate. The transient reflectance kinetics measured at different pump fluences exhibit a remarkable intensity-dependent decay behavior which accelerates significantly with increasing pump pulse intensity. All the kinetic decays can be satisfactorily described using a bi-exponential decay function with lifetimes of 22 and 204 ps, and corresponding relative amplitudes depending on the pump intensity. The accelerated decay behavior observed at high pump intensities arises from a nonlinear exciton-exciton annihilation process. While this phenomenon has been found previously in crystalline metallophthalocyanine (MPc) polymorphs such as colloidal particles and thin films, the results obtained using the CuPc nanowires are markedly distinct, namely, much longer decay times and a linear intensity dependence of the initial peak amplitudes. Despite these differences, detailed data analysis further shows that, as found for other metal-phthalocyanine polymorphs, exciton-exciton annihilation in the CuPc nanowires is one-dimensional (1D) diffusion-limited, which possibly involves intra-chain exciton diffusion along 1D molecular stacks. The significantly long-lived excitons of CuPc nanowires in comparison to those of other crystalline polymorphs make them particularly suitable for photovoltaic applications.

  16. Facile fabrication of electrolyte-gated single-crystalline cuprous oxide nanowire field-effect transistors

    NASA Astrophysics Data System (ADS)

    Stoesser, Anna; von Seggern, Falk; Purohit, Suneeti; Nasr, Babak; Kruk, Robert; Dehm, Simone; Wang, Di; Hahn, Horst; Dasgupta, Subho

    2016-10-01

    Oxide semiconductors are considered to be one of the forefront candidates for the new generation, high-performance electronics. However, one of the major limitations for oxide electronics is the scarcity of an equally good hole-conducting semiconductor, which can provide identical performance for the p-type metal oxide semiconductor field-effect transistors as compared to their electron conducting counterparts. In this quest, here we present a bulk synthesis method for single crystalline cuprous oxide (Cu2O) nanowires, their chemical and morphological characterization and suitability as active channel material in electrolyte-gated, low-power, field-effect transistors (FETs) for portable and flexible logic circuits. The bulk synthesis method used in the present study includes two steps: namely hydrothermal synthesis of the nanowires and the removal of the surface organic contaminants. The surface treated nanowires are then dispersed on a receiver substrate where the passive electrodes are structured, followed by printing of a composite solid polymer electrolyte (CSPE), chosen as the gate insulator. The characteristic electrical properties of individual nanowire FETs are found to be quite interesting including accumulation-mode operation and field-effect mobility of 0.15 cm2 V-1 s-1.

  17. Control of single photon emitters in semiconductor nanowires by surface acoustic waves

    NASA Astrophysics Data System (ADS)

    Lazić, S.; Hernández-Mínguez, A.; Santos, P. V.

    2017-08-01

    We report on an experimental study into the effects of surface acoustic waves on the optical emission of dot-in-a-nanowire heterostructures in III-V material systems. Under direct optical excitation, the excitonic energy levels in III-nitride dot-in-a-nanowire heterostructures oscillate at the acoustic frequency, producing a characteristic splitting of the emission lines in the time-integrated photoluminescence spectra. This acoustically induced periodic tuning of the excitonic transition energies is combined with spectral detection filtering and employed as a tool to regulate the temporal output of anti-bunched photons emitted from these nanowire quantum dots. In addition, the acoustic transport of electrons and holes along a III-arsenide nanowire injects the electric charges into an ensemble of quantum dot-like recombination centers that are spatially separated from the optical excitation area. The acoustic population and depopulation mechanism determines the number of carrier recombination events taking place simultaneously in the ensemble, thus allowing control of the anti-bunching degree of the emitted photons. The results presented are relevant for the dynamic control of single photon emission in III-V semiconductor heterostructures.

  18. In situ observation of the electrochemical lithiation of a single SnO₂ nanowire electrode.

    PubMed

    Huang, Jian Yu; Zhong, Li; Wang, Chong Min; Sullivan, John P; Xu, Wu; Zhang, Li Qiang; Mao, Scott X; Hudak, Nicholas S; Liu, Xiao Hua; Subramanian, Arunkumar; Fan, Hongyou; Qi, Liang; Kushima, Akihiro; Li, Ju

    2010-12-10

    We report the creation of a nanoscale electrochemical device inside a transmission electron microscope--consisting of a single tin dioxide (SnO(2)) nanowire anode, an ionic liquid electrolyte, and a bulk lithium cobalt dioxide (LiCoO(2)) cathode--and the in situ observation of the lithiation of the SnO(2) nanowire during electrochemical charging. Upon charging, a reaction front propagated progressively along the nanowire, causing the nanowire to swell, elongate, and spiral. The reaction front is a "Medusa zone" containing a high density of mobile dislocations, which are continuously nucleated and absorbed at the moving front. This dislocation cloud indicates large in-plane misfit stresses and is a structural precursor to electrochemically driven solid-state amorphization. Because lithiation-induced volume expansion, plasticity, and pulverization of electrode materials are the major mechanical effects that plague the performance and lifetime of high-capacity anodes in lithium-ion batteries, our observations provide important mechanistic insight for the design of advanced batteries.

  19. Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method

    NASA Astrophysics Data System (ADS)

    Xiao, Ming; Musselman, Kevin P.; Duley, Walter W.; Zhou, Norman Y.

    2017-04-01

    The resistive switching characteristics of TiO2 nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the supply of Ti atoms for growth of the TiO2 nanowires, making the preparation straightforward. It also acts as a bottom electrode for the device. A top Al electrode was fabricated by e-beam evaporation process. The Al/TiO2 nanowire networks/Ti device fabricated in this way displayed a highly repeatable and electroforming-free bipolar resistive behavior with retention for more than 104 s and an OFF/ON ratio of approximately 70. The switching mechanism of this Al/TiO2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field. This provides a facile way to obtain metal oxide nanowire-based ReRAM device in the future.

  20. X-ray diffraction strain analysis of a single axial InAs 1-x Px nanowire segment.

    PubMed

    Keplinger, Mario; Mandl, Bernhard; Kriegner, Dominik; Holý, Václav; Samuelsson, Lars; Bauer, Günther; Deppert, Knut; Stangl, Julian

    2015-01-01

    The spatial strain distribution in and around a single axial InAs 1-x Px hetero-segment in an InAs nanowire was analyzed using nano-focused X-ray diffraction. In connection with finite-element-method simulations a detailed quantitative picture of the nanowire's inhomogeneous strain state was achieved. This allows for a detailed understanding of how the variation of the nanowire's and hetero-segment's dimensions affect the strain in its core region and in the region close to the nanowire's side facets. Moreover, ensemble-averaging high-resolution diffraction experiments were used to determine statistical information on the distribution of wurtzite and zinc-blende crystal polytypes in the nanowires.

  1. Transport properties of ultrathin YBa2Cu3O7 -δ nanowires: A route to single-photon detection

    NASA Astrophysics Data System (ADS)

    Arpaia, Riccardo; Golubev, Dmitri; Baghdadi, Reza; Ciancio, Regina; Dražić, Goran; Orgiani, Pasquale; Montemurro, Domenico; Bauch, Thilo; Lombardi, Floriana

    2017-08-01

    We report on the growth and characterization of ultrathin YBa2Cu3O7 -δ (YBCO) films on MgO (110) substrates, which exhibit superconducting properties at thicknesses down to 3 nm. YBCO nanowires, with thicknesses down to 10 nm and widths down to 65 nm, have also been successfully fabricated. The nanowires protected by a Au capping layer show superconducting properties close to the as-grown films and critical current densities, which are limited by only vortex dynamics. The 10-nm-thick YBCO nanowires without the Au capping present hysteretic current-voltage characteristics, characterized by a voltage switch which drives the nanowires directly from the superconducting to the normal state. We associate such bistability to the presence of localized normal domains within the superconductor. The presence of the voltage switch in ultrathin YBCO nanostructures, characterized by high sheet resistance values and high critical current values, makes our nanowires very attractive devices to engineer single-photon detectors.

  2. Synthesis of single-crystal low-loss LiB3O5 nanowire and its optical properties

    NASA Astrophysics Data System (ADS)

    Qu, Guang-Yuan; Yang, Cheng-Wei; Cui, Guo-Xin; Zhang, Xue-Jin; Lu, Yan-Qing

    2016-12-01

    Optical-quality single-crystal LiB3O5 (LBO) nanowires are synthesized for the first time using a sol–gel method. The LBO nanowires possess diameters ranging from 200 to 800 nm and lengths of up to 200 μm, and exhibit excellent uniformity, smooth surfaces, and good mechanical properties. A typical propagating loss of 0.038 dB/μm at 532 nm is obtained for a 620 nm-diameter nanowire. This is a decrease of one order of magnitude compared with that of a β-BaB2O4 (BBO) nanowire with similar diameter, which makes the LBO nanowire a promising candidate to construct miniaturized nonlinear photonic devices.

  3. Synthesis of single-crystal low-loss LiB3O5 nanowire and its optical properties

    PubMed Central

    Qu, Guang-Yuan; Yang, Cheng-Wei; Cui, Guo-xin; Zhang, Xue-Jin; Lu, Yan-Qing

    2016-01-01

    Optical-quality single-crystal LiB3O5 (LBO) nanowires are synthesized for the first time using a sol–gel method. The LBO nanowires possess diameters ranging from 200 to 800 nm and lengths of up to 200 μm, and exhibit excellent uniformity, smooth surfaces, and good mechanical properties. A typical propagating loss of 0.038 dB/μm at 532 nm is obtained for a 620 nm-diameter nanowire. This is a decrease of one order of magnitude compared with that of a β-BaB2O4 (BBO) nanowire with similar diameter, which makes the LBO nanowire a promising candidate to construct miniaturized nonlinear photonic devices. PMID:27991549

  4. Multiple tunnel junctions based nanowire photodetector model for single charge detection

    NASA Astrophysics Data System (ADS)

    Chatbouri, Samir; Touati, A.; Troudi, M.; Sghaier, N.; Kalboussi, A.

    2013-07-01

    In this paper we propose a new silicon nanowire photodetector model based on a single-electron transistor for single charge detection (photo-NWSET). In the first part of this work we present the two blocks of the device structure (reading and detection blocks). The presented model is consisting of two blocks capacitively coupled. The first SET (SET1) is supposed to read the charge whereas the detection block is represented by the nanowire (NW) system associated to an optical source. We modeled the NW by a series of seven islands separated by eight tunnel junctions (8TJs). In the second part of this work, we investigate the effects of photoexcitation on Id-Vg curves and we present results obtained on the output (photo-NWSET) characteristics after variation of power illumination and response time.

  5. Sharp exciton emission from single InAs quantum dots in GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Panev, Nikolay; Persson, Ann I.; Sköld, Niklas; Samuelson, Lars

    2003-09-01

    We have performed photoluminescence spectroscopy on single GaAs nanowires with InAs quantum dots in the form of thin slices of InAs, possibly alloyed with Ga as InGaAs, incorporated into the GaAs. The nanowires were grown by chemical beam epitaxy using gold nanoparticles as catalysts. The photoluminescence measurements showed rich spectra consisting of sharp lines with energies and excitation power dependency behavior very similar to that observed for Stranski-Krastanow-grown InAs/GaAs quantum dots. By reducing the excitation power density we were able to obtain a quantum dot spectrum consisting of only one single sharp line—the exciton line.

  6. Enhanced light-harvesting capability for silicon single-nanowire solar cells coupled with metallic cavity.

    PubMed

    Gai, Feng; Zhang, Cheng; Zhan, Yaohui; Li, Xiaofeng

    2016-12-26

    Single-nanowire solar cells (SNSCs) are attracting increasing interest due to their unique optical antenna effect beneficial for achieving higher light-trapping capability. However, for conventional circular-cross-sectional SNSCs, the light-trapping performance is still far from the expectation. Here we demonstrate that integrating a silicon single nanowire into a metallic slit can dramatically enhance the absorption efficiency over almost the whole spectral band due to strengthened optical antenna effect. Especially, it is found that by using finite-size metallic blocks to form a nanoscale metallic cavity, the light-trapping performance of the SNSCs can be further improved. Through examining the detailed optical spectral response, electric field distribution, and cavity dispersion characteristics, the metallic-coupled SNSC system is optimized and the underlying physics are provided. Simulation results indicate that the photocurrent density of the SNSCs coupled with the designed metallic cavity can be enhanced by 44.4% than that of the conventional bare SNSCs.

  7. Ambient surfactantless synthesis, growth mechanism, and size-dependent electrocatalytic behavior of high-quality, single crystalline palladium nanowires.

    PubMed

    Koenigsmann, Christopher; Santulli, Alexander C; Sutter, Eli; Wong, Stanislaus S

    2011-09-27

    In this report, we utilize the U-tube double diffusion device as a reliable, environmentally friendly method for the size-controlled synthesis of high-quality, single crystalline Pd nanowires. The nanowires grown in 200 and 15 nm polycarbonate template pores maintain diameters of 270 ± 45 nm and 45 ± 9 nm, respectively, and could be isolated either as individual nanowires or as ordered free-standing arrays. The growth mechanism of these nanowires has been extensively explored, and we have carried out characterization of the isolated nanowires, free-standing nanowire arrays, and cross sections of the filled template in order to determine that a unique two-step growth process predominates within the template pores. Moreover, as-prepared submicrometer and nanosized wires were studied by comparison with ultrathin 2 nm Pd nanowires in order to elucidate the size-dependent trend in oxygen reduction reaction (ORR) electrocatalysis. Subsequently, the desired platinum monolayer overcoating was reliably deposited onto the surface of the Pd nanowires by Cu underpotential deposition (UPD) followed by galvanic displacement of the Cu adatoms. The specific and platinum mass activity of the core-shell catalysts was found to increase from 0.40 mA/cm(2) and 1.01 A/mg to 0.74 mA/cm(2) and 1.74 A/mg as the diameter was decreased from the submicrometer size regime to the ultrathin nanometer range.

  8. Novel optoelectronic devices based on single semiconductor nanowires (nanobelts).

    PubMed

    Ye, Yu; Dai, Lun; Gan, Lin; Meng, Hu; Dai, Yu; Guo, Xuefeng; Qin, Guogang

    2012-04-13

    Semiconductor nanowires (NWs) or nanobelts (NBs) have attracted more and more attention due to their potential application in novel optoelectronic devices. In this review, we present our recent work on novel NB photodetectors, where a three-terminal metal-semiconductor field-effect transistor (MESFET) device structure was exploited. In contrast to the common two-terminal NB (NW) photodetectors, the MESFET-based photodetector can make a balance among overall performance parameters, which is desired for practical device applications. We also present our recent work on graphene nanoribbon/semiconductor NW (SNW) heterojunction light-emitting diodes (LEDs). Herein, by taking advantage of both graphene and SNWs, we have fabricated, for the first time, the graphene-based nano-LEDs. This achievement opens a new avenue for developing graphene-based nano-electroluminescence devices. Moreover, the novel graphene/SNW hybrid devices can also find use in other applications, such as high-sensitivity sensor and transparent flexible devices in the future.

  9. Design of superconducting nanowire single photon detector with high efficiency and dual broadband

    NASA Astrophysics Data System (ADS)

    Zheng, Fan; Chen, Yajun; Xu, Ruiying; Gu, Min

    2017-08-01

    In this paper, a superconducting nanowire single photon detector (SNSPD) is expressed as an equivalent circuit model. Combined with the theory of transmission line and impedance matching, the model is analyzed and a method is presented to design a SNSPD with high efficiency and dual broadband. Take the λ=1310 nm and λ=1550 nm as an example, geometry parameters of the device are calculated by this method and verified by the commercial software FDTD Solutions.

  10. Transport studies of quantum dots sensitized single Mn-ZnO nanowire field effect transistors

    NASA Astrophysics Data System (ADS)

    Sapkota, Keshab R.; Maloney, Francis Scott; Rimal, Gaurab; Poudyal, Uma; Tang, Jinke; Wang, Wenyong

    We present opto-electrical transport properties of Mn-CdSe quantum dots (QDs) sensitized single Mn-ZnO nanowire (NW) field effect transistors (FET). The ZnO NWs with 2 atomic % of Mn doping are grown by chemical vapor deposition. The NWs are ferromagnetic at low temperature. The as grown nanowires are transferred to clean SiO2/Si substrate and single nanowire field effect transistors (FET) are fabricated by standard e-beam lithography. Mobility and carrier concentration of Mn-ZnO NWs are estimated from FET device measurement which shows NWs are n-type semiconductors. Pulse laser deposition of Mn-CdSe QDs on the single NW FET significantly increases carrier concentration of the QD-NW system in dark where the QD monolayer conduction is negligibly small. The photoconductivity study of QD sensitized NW FET enlightens the conduction spectrum of QD-NW system and QD to NW carrier transfer mechanism. This work has been supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award DE-FG02-10ER46728.

  11. Nano-optical observation of cascade switching in a parallel superconducting nanowire single photon detector

    SciTech Connect

    Heath, Robert M. Tanner, Michael G.; Casaburi, Alessandro; Hadfield, Robert H.; Webster, Mark G.; San Emeterio Alvarez, Lara; Jiang, Weitao; Barber, Zoe H.; Warburton, Richard J.

    2014-02-10

    The device physics of parallel-wire superconducting nanowire single photon detectors is based on a cascade process. Using nano-optical techniques and a parallel wire device with spatially separate pixels, we explicitly demonstrate the single- and multi-photon triggering regimes. We develop a model for describing efficiency of a detector operating in the arm-trigger regime. We investigate the timing response of the detector when illuminating a single pixel and two pixels. We see a change in the active area of the detector between the two regimes and find the two-pixel trigger regime to have a faster timing response than the one-pixel regime.

  12. Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy.

    PubMed

    Fan, Dingxun; Li, Sen; Kang, N; Caroff, Philippe; Wang, L B; Huang, Y Q; Deng, M T; Yu, C L; Xu, H Q

    2015-09-28

    We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO2 substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ∼700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landég-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ∼300 μeV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.

  13. Genetic Variation in the 3'-Untranslated Region of NBN Gene Is Associated with Gastric Cancer Risk in a Chinese Population

    PubMed Central

    Zhu, Xun; Ren, Chuanli; Xie, Lan; Dai, Ningbin; Gu, Yayun; Yan, Caiwang; Dai, Juncheng; Ma, Hongxia; Jiang, Yue; Chen, Jiaping; Hu, Zhibin; Shen, Hongbing; Wu, Haorong; Jin, Guangfu

    2015-01-01

    NBN plays a crucial role in carcinogenesis as a core component for both homologous recombination (HR) and non-homologous end-joining (NHEJ) DNA double-strand breaks (DSBs) repair pathways. Genetic variants in the NBN gene have been associated with multiple cancers risk, suggesting pleiotropic effect on cancer. We hypothesized that genetic variants in the NBN gene may modify the risk of gastric cancer. To test this hypothesis, we evaluated the association between four potentially functional single nucleotide polymorphisms in NBN and gastric cancer risk in a case–control study of 1,140 gastric cancer cases and 1,547 controls in a Chinese population. We found that the A allele of rs10464867 (G>A) was significantly associated with a decreased risk of gastric cancer (odds ratio [OR] = 0.81, 95% confidence interval [95% CI] = 0.71–0.94; P = 4.71×10−3). Furthermore, the association between A allele of rs10464867 and decreased risk of gastric cancer was more significantly in elder individuals (per-allele OR = 0.72[0.59–0.88], P = 1.07×10−3), and male individuals (per-allele OR = 0.73[0.62–0.87], P = 3.68×10−4). We further conducted a haplotype analysis and identified that the NBN Ars10464867Grs14448Grs1063053 haplotype conferred stronger protective effect on gastric cancer (OR = 0.76[0.65–0.89], P = 6.39×10−4). In summary, these findings indicate that genetic variants at NBN gene may contribute to gastric cancer susceptibility and may further advance our understanding of NBN gene in cancer development. PMID:26402912

  14. Single-photon emission from InAsP quantum dots embedded in density-controlled InP nanowires

    NASA Astrophysics Data System (ADS)

    Yanase, Shougo; Sasakura, Hirotaka; Hara, Shinjiro; Motohisa, Junichi

    2017-04-01

    We attempted to control the density and size of InP-based nanowires (NWs) and nanowire quantum dots (NW-QDs) during selective-area metalorganic vapor phase epitaxy. InP nanowire arrays with a 5 µm pitch and an average NW diameter d of 67 nm were successfully grown by optimization of growth conditions. InAsP quantum dots were embedded in these density-controlled InP NW arrays, and clear single-photon emission and exciton-biexciton cascaded emission were confirmed by excitation-dependent photoluminescence and photon correlation measurements.

  15. The sensitivity of gas sensor based on single ZnO nanowire modulated by helium ion radiation

    SciTech Connect

    Liao, L.; Lu, H. B.; Li, J. C.; Liu, C.; Fu, D. J.; Liu, Y. L.

    2007-10-22

    In this letter, we present a gas sensor using a single ZnO nanowire as a sensing unit. This ZnO nanowire-based sensor has quick and high sensitive response to H{sub 2}S in air at room temperature. It has also been found that the gas sensitivity of the ZnO nanowires could be modulated and enhanced by He{sup +} implantation at an appropriate dose. A possible explanation is given based on the modulation model of the depletion layer.

  16. Localized tip enhanced Raman spectroscopic study of impurity incorporated single GaN nanowire in the sub-diffraction limit

    SciTech Connect

    Patsha, Avinash E-mail: dhara@igcar.gov.in; Dhara, Sandip; Tyagi, A. K.

    2015-09-21

    The localized effect of impurities in single GaN nanowires in the sub-diffraction limit is reported using the study of lattice vibrational modes in the evanescent field of Au nanoparticle assisted tip enhanced Raman spectroscopy (TERS). GaN nanowires with the O impurity and the Mg dopants were grown by the chemical vapor deposition technique in the catalyst assisted vapor-liquid-solid process. Symmetry allowed Raman modes of wurtzite GaN are observed for undoped and doped nanowires. Unusually very strong intensity of the non-zone center zone boundary mode is observed for the TERS studies of both the undoped and the Mg doped GaN single nanowires. Surface optical mode of A{sub 1} symmetry is also observed for both the undoped and the Mg doped GaN samples. A strong coupling of longitudinal optical (LO) phonons with free electrons, however, is reported only in the O rich single nanowires with the asymmetric A{sub 1}(LO) mode. Study of the local vibration mode shows the presence of Mg as dopant in the single GaN nanowires.

  17. Fabrication of a single metal nanowire connected with dissimilar metal electrodes and its application to chemical sensing.

    PubMed

    Lin, Hsin-Yu; Chen, Hsiang-An; Lin, Heh-Nan

    2008-03-15

    We report a convenient method for the fabrication of a single metal nanowire connected with dissimilar metal electrodes and its application to chemical sensing. The method is based on a combination of atomic force microscopy nanomachining and conventional photolithography. The success of this integrated approach is confirmed by the linear current-voltage behavior of the created nanowires and comparable resistivities with those reported previously. The chemical sensing capability is demonstrated by the selective binding of a self-assembled monolayer onto a single Au nanowire connected with Ti electrodes and the subsequent resistance increase due to increased surface scattering effects after adsorption. It is found that the resistance increases by around 9% after the complete coverage of either octadecanethiol or dodecanethiol molecules onto a 20 nm thick Au nanowire. A theoretical explanation for the relationship between the resistance increase and the alkanethiol concentration is also given.

  18. Ultrafast light-induced symmetry changes in single BaTiO3 nanowires

    DOE PAGES

    Kuo, Yi -Hong; Nah, Sanghee; He, Kai; ...

    2017-01-23

    The coupling of light to nanoscale ferroelectric materials enables novel means of controlling their coupled degrees of freedom and engineering new functionality. Here we present femtosecond time-resolution nonlinear-optical measurements of light-induced dynamics within single ferroelectric barium titanate nanowires. By analyzing the time-dependent and polarization-dependent second harmonic intensity generated by the nanowire, we identify its crystallographic orientation and then make use of this information in order to probe its dynamic structural response and change in symmetry. Here, we show that photo-excitation leads to ultrafast, non-uniform modulations in the second order nonlinear susceptibility tensor, indicative of changes in the local symmetry ofmore » the nanostructure occurring on sub-picosecond time-scales.« less

  19. Antibacterial activity of single crystalline silver-doped anatase TiO2 nanowire arrays

    NASA Astrophysics Data System (ADS)

    Zhang, Xiangyu; Li, Meng; He, Xiaojing; Hang, Ruiqiang; Huang, Xiaobo; Wang, Yueyue; Yao, Xiaohong; Tang, Bin

    2016-05-01

    Well-ordered, one-dimensional silver-doped anatase TiO2 nanowire (AgNW) arrays have been prepared through a hydrothermal growth process on the sputtering-deposited AgTi layers. Electron microscope analyses reveal that the as-synthesized AgNW arrays exhibit a single crystalline phase with highly uniform morphologies, diameters ranging from 85 to 95 nm, and lengths of about 11 μm. Silver is found to be doped into TiO2 nanowire evenly and mainly exists in the zerovalent state. The AgNW arrays show excellent efficient antibacterial activity against Escherichia coli (E. coli), and all of the bacteria can be killed within 1 h. Additionally, the AgNW arrays can still kill E. coli after immersion for 60 days, suggesting the long-term antibacterial property. The technique reported here is environmental friendly for formation of silver-containing nanostructure without using any toxic organic solvents.

  20. Alignment, rotation, and spinning of single plasmonic nanoparticles and nanowires using polarization dependent optical forces.

    PubMed

    Tong, Lianming; Miljković, Vladimir D; Käll, Mikael

    2010-01-01

    We demonstrate optical alignment and rotation of individual plasmonic nanostructures with lengths from tens of nanometers to several micrometers using a single beam of linearly polarized near-infrared laser light. Silver nanorods and dimers of gold nanoparticles align parallel to the laser polarization because of the high long-axis dipole polarizability. Silver nanowires, in contrast, spontaneously turn perpendicular to the incident polarization and predominantly attach at the wire ends, in agreement with electrodynamics simulations. Wires, rods, and dimers all rotate if the incident polarization is turned. In the case of nanowires, we demonstrate spinning at an angular frequency of approximately 1 Hz due to transfer of spin angular momentum from circularly polarized light.

  1. Probing the local environment of a superconductor-proximitized nanowire using single electron transistors

    NASA Astrophysics Data System (ADS)

    Pei, Fei; Cassidy, Maja; Plissard, Sebastien; Car, Diana; Bakkers, Erik; Kouwenhoven, Leo

    2014-03-01

    Majorana bound states are predicted to arise in semiconducting nanowires with strong spin-orbit coupling that are proximity-coupled to a s-wave superconductor and exposed to a magnetic field. Recent tunneling spectroscopy experiments have shown signatures of Majorana bound states through the existence of a peak in conductance that remains fixed to zero bias over a wide range in magnetic fields. Observation of the delocalized nature of these states remains an outstanding challenge. Here we present measurements of a InSb nanowire proximitized by a central superconducting contact. Normal metal leads allow tunneling spectroscopy from each end of the wire, while nearby single electron transistors provide simultaneous information on the local environment both within the proximitized wire and at each end.

  2. Investigation into Photoconductivity in Single CNF/TiO2-Dye Core-Shell Nanowire Devices

    NASA Astrophysics Data System (ADS)

    Li, Zhuangzhi; Rochford, Caitlin; Javier Baca, F.; Liu, Jianwei; Li, Jun; Wu, Judy

    2010-09-01

    A vertically aligned carbon nanofiber array coated with anatase TiO2 (CNF/TiO2) is an attractive possible replacement for the sintered TiO2 nanoparticle network in the original dye-sensitized solar cell (DSSC) design due to the potential for improved charge transport and reduced charge recombination. Although the reported efficiency of 1.1% in these modified DSSC’s is encouraging, the limiting factors must be identified before a higher efficiency can be obtained. This work employs a single nanowire approach to investigate the charge transport in individual CNF/TiO2 core-shell nanowires with adsorbed N719 dye molecules in dark and under illumination. The results shed light on the role of charge traps and dye adsorption on the (photo) conductivity of nanocrystalline TiO2 CNF’s as related to dye-sensitized solar cell performance.

  3. Single-electron tunneling in silicon-on-insulator nano-wire transistors

    NASA Astrophysics Data System (ADS)

    Cho, K. H.; Son, S. H.; Hong, S. H.; Kim, B. C.; Hwang, S. W.; Ahn, D.; Park, B.-G.; Naser, B.; Lin, J.-F.; Bird, J. P.; Ferry, D. K.

    2003-09-01

    The gate bias dependent evolution of the Coulomb oscillations in a silicon-on-insulator nano-wire transistor is reported. Transport data obtained for a wide range of front- and back-gate bias strongly suggest that multiple quantum dots (QDs) with different potential depths are formed in the nano-wire channel. Our data can be clearly interpreted as arising from the turning on or off of one of these QDs as the back-gate bias is varied. Quantitative calculation based on the model of single-electron tunneling through two parallel QDs is in reasonable agreement with the measured data in the back-gate bias range where the third dot is not activated.

  4. Improving the timing jitter of a superconducting nanowire single-photon detection system.

    PubMed

    Wu, Junjie; You, Lixing; Chen, Sijing; Li, Hao; He, Yuhao; Lv, Chaolin; Wang, Zhen; Xie, Xiaoming

    2017-03-10

    Low timing jitter is a unique merit of superconducting nanowire single-photon detectors (SNSPDs) for time-correlated applications. Quantitative analysis was performed for the SNSPD system. Aided by an oscilloscope with an optimal signal amplitude, we were able to measure a full width at half-maximum system timing jitter as low as 14.2 ps for a high-switching-current SNSPD using a room-temperature low-noise amplifier. When using a time-correlated single-photon counting module, the system timing jitter was 17.3 ps. The detector's intrinsic timing jitter was estimated at ∼12.0  ps.

  5. Subnanosecond spectral diffusion of a single quantum dot in a nanowire

    NASA Astrophysics Data System (ADS)

    Sallen, G.; Tribu, A.; Aichele, T.; André, R.; Besombes, L.; Bougerol, C.; Richard, M.; Tatarenko, S.; Kheng, K.; Poizat, J.-Ph.

    2011-07-01

    We have studied spectral diffusion of the photoluminescence of a single CdSe quantum dot inserted in a ZnSe nanowire. We have measured the characteristic diffusion time as a function of pumping power and temperature using a recently developed technique [G. Sallen , Nat. Photon. RMPHAT1749-488510.1038/nphoton.2010.1744, 696 (2010)] that offers subnanosecond resolution. These data are consistent with a model where only a single carrier wanders around in traps located in the vicinity of the quantum dot.

  6. Single-crystalline δ-Ni2Si nanowires with excellent physical properties

    NASA Astrophysics Data System (ADS)

    Chiu, Wen-Li; Chiu, Chung-Hua; Chen, Jui-Yuan; Huang, Chun-Wei; Huang, Yu-Ting; Lu, Kuo-Chang; Hsin, Cheng-Lun; Yeh, Ping-Hung; Wu, Wen-Wei

    2013-06-01

    In this article, we report the synthesis of single-crystalline nickel silicide nanowires (NWs) via chemical vapor deposition method using NiCl2·6H2O as a single-source precursor. Various morphologies of δ-Ni2Si NWs were successfully acquired by controlling the growth conditions. The growth mechanism of the δ-Ni2Si NWs was thoroughly discussed and identified with microscopy studies. Field emission measurements show a low turn-on field (4.12 V/μm), and magnetic property measurements show a classic ferromagnetic characteristic, which demonstrates promising potential applications for field emitters, magnetic storage, and biological cell separation.

  7. Orthogonal sequencing multiplexer for superconducting nanowire single-photon detectors with RSFQ electronics readout circuit.

    PubMed

    Hofherr, Matthias; Wetzstein, Olaf; Engert, Sonja; Ortlepp, Thomas; Berg, Benjamin; Ilin, Konstantin; Henrich, Dagmar; Stolz, Ronny; Toepfer, Hannes; Meyer, Hans-Georg; Siegel, Michael

    2012-12-17

    We propose an efficient multiplexing technique for superconducting nanowire single-photon detectors based on an orthogonal detector bias switching method enabling the extraction of the average count rate of a set of detectors by one readout line. We implemented a system prototype where the SNSPDs are connected to an integrated cryogenic readout and a pulse merger system based on rapid single flux quantum (RSFQ) electronics. We discuss the general scalability of this concept, analyze the environmental requirements which define the resolvability and the accuracy and demonstrate the feasibility of this approach with experimental results for a SNSPD array with four pixels.

  8. Frequency-multiplexed bias and readout of a 16-pixel superconducting nanowire single-photon detector array

    NASA Astrophysics Data System (ADS)

    Doerner, S.; Kuzmin, A.; Wuensch, S.; Charaev, I.; Boes, F.; Zwick, T.; Siegel, M.

    2017-07-01

    We demonstrate a 16-pixel array of microwave-current driven superconducting nanowire single-photon detectors with an integrated and scalable frequency-division multiplexing architecture, which reduces the required number of bias and readout lines to a single microwave feed line. The electrical behavior of the photon-sensitive nanowires, embedded in a resonant circuit, as well as the optical performance and timing jitter of the single detectors is discussed. Besides the single pixel measurements, we also demonstrate the operation of a 16-pixel array with a temporal, spatial, and photon-number resolution.

  9. The Slavic NBN Founder Mutation: A Role for Reproductive Fitness?

    PubMed Central

    Seemanova, Eva; Varon, Raymonda; Vejvalka, Jan; Seeman, Pavel; Chrzanowska, Krystyna H.; Digweed, Martin; Resnick, Igor; Kremensky, Ivo; Saar, Kathrin; Hoffmann, Katrin; Dutrannoy, Véronique; Karbasiyan, Mohsen; Ghani, Mehdi; Barić, Ivo; Tekin, Mustafa; Kovacs, Peter; Krawczak, Michael; Reis, André; Sperling, Karl

    2016-01-01

    The vast majority of patients with Nijmegen Breakage Syndrome (NBS) are of Slavic origin and carry a deleterious deletion (c.657del5; rs587776650) in the NBN gene on chromosome 8q21. This mutation is essentially confined to Slavic populations and may thus be considered a Slavic founder mutation. Notably, not a single parenthood of a homozygous c.657del5 carrier has been reported to date, while heterozygous carriers do reproduce but have an increased cancer risk. These observations seem to conflict with the considerable carrier frequency of c.657del5 of 0.5% to 1% as observed in different Slavic populations because deleterious mutations would be eliminated quite rapidly by purifying selection. Therefore, we propose that heterozygous c.657del5 carriers have increased reproductive success, i.e., that the mutation confers heterozygote advantage. In fact, in our cohort study of the reproductive history of 24 NBS pedigrees from the Czech Republic, we observed that female carriers gave birth to more children on average than female non-carriers, while no such reproductive differences were observed for males. We also estimate that c.657del5 likely occurred less than 300 generations ago, thus supporting the view that the original mutation predated the historic split and subsequent spread of the ‘Slavic people’. We surmise that the higher fertility of female c.657del5 carriers reflects a lower miscarriage rate in these women, thereby reflecting the role of the NBN gene product, nibrin, in the repair of DNA double strand breaks and their processing in immune gene rearrangements, telomere maintenance, and meiotic recombination, akin to the previously described role of the DNA repair genes BRCA1 and BRCA2. PMID:27936167

  10. Heterojunction metal-oxide-metal Au-Fe{sub 3}O{sub 4}-Au single nanowire device for spintronics

    SciTech Connect

    Reddy, K. M. Punnoose, Alex; Hanna, Charles; Padture, Nitin P.

    2015-05-07

    In this report, we present the synthesis of heterojunction magnetite nanowires in alumina template and describe magnetic and electrical properties from a single nanowire device for spintronics applications. Heterojunction Au-Fe-Au nanowire arrays were electrodeposited in porous aluminum oxide templates, and an extensive and controlled heat treatment process converted Fe segment to nanocrystalline cubic magnetite phase with well-defined Au-Fe{sub 3}O{sub 4} interfaces as confirmed by the transmission electron microscopy. Magnetic measurements revealed Verwey transition shoulder around 120 K and a room temperature coercive field of 90 Oe. Current–voltage (I-V) characteristics of a single Au-Fe{sub 3}O{sub 4}-Au nanowire have exhibited Ohmic behavior. Anomalous positive magnetoresistance of about 0.5% is observed on a single nanowire, which is attributed to the high spin polarization in nanowire device with pure Fe{sub 3}O{sub 4} phase and nanocontact barrier. This work demonstrates the ability to preserve the pristine Fe{sub 3}O{sub 4} and well defined electrode contact metal (Au)–magnetite interface, which helps in attaining high spin polarized current.

  11. Electrical probing of magnetic phase transition and domain wall motion in single-crystalline Mn₅Ge₃ nanowire.

    PubMed

    Tang, Jianshi; Wang, Chiu-Yen; Jiang, Wanjun; Chang, Li-Te; Fan, Yabin; Chan, Michael; Wu, Can; Hung, Min-Hsiu; Liu, Pei-Hsuan; Yang, Hong-Jie; Tuan, Hsing-Yu; Chen, Lih-Juann; Wang, Kang L

    2012-12-12

    In this Letter, the magnetic phase transition and domain wall motion in a single-crystalline Mn(5)Ge(3) nanowire were investigated by temperature-dependent magneto-transport measurements. The ferromagnetic Mn(5)Ge(3) nanowire was fabricated by fully germaniding a single-crystalline Ge nanowire through the solid-state reaction with Mn contacts upon thermal annealing at 450 °C. Temperature-dependent four-probe resistance measurements on the Mn(5)Ge(3) nanowire showed a clear slope change near 300 K accompanied by a magnetic phase transition from ferromagnetism to paramagnetism. The transition temperature was able to be controlled by both axial and radial magnetic fields as the external magnetic field helped maintain the magnetization aligned in the Mn(5)Ge(3) nanowire. Near the magnetic phase transition, the critical behavior in the 1D system was characterized by a power-law relation with a critical exponent of α = 0.07 ± 0.01. Besides, another interesting feature was revealed as a cusp at about 67 K in the first-order derivative of the nanowire resistance, which was attributed to a possible magnetic transition between two noncollinear and collinear ferromagnetic states in the Mn(5)Ge(3) lattice. Furthermore, temperature-dependent magneto-transport measurements demonstrated a hysteretic, symmetric, and stepwise axial magnetoresistance of the Mn(5)Ge(3) nanowire. The interesting features of abrupt jumps indicated the presence of multiple domain walls in the Mn(5)Ge(3) nanowire and the annihilation of domain walls driven by the magnetic field. The Kurkijärvi model was used to describe the domain wall depinning as thermally assisted escape from a single energy barrier, and the fitting on the temperature-dependent depinning magnetic fields yielded an energy barrier of 0.166 eV.

  12. An Affordable Wet Chemical Route to Grow Conducting Hybrid Graphite-Diamond Nanowires: Demonstration by A Single Nanowire Device.

    PubMed

    Shellaiah, Muthaiah; Chen, Tin Hao; Simon, Turibius; Li, Liang-Chen; Sun, Kien Wen; Ko, Fu-Hsiang

    2017-09-11

    We report an affordable wet chemical route for the reproducible hybrid graphite-diamond nanowires (G-DNWs) growth from cysteamine functionalized diamond nanoparticles (ND-Cys) via pH induced self-assembly, which has been visualized through SEM and TEM images. Interestingly, the mechanistic aspects behind that self-assembly directed G-DNWs formation was discussed in details. Notably, above self-assembly was validated by AFM and TEM data. Further interrogations by XRD and Raman data were revealed the possible graphite sheath wrapping over DNWs. Moreover, the HR-TEM studies also verified the coexistence of less perfect sp(2) graphite layer wrapped over the sp(3) diamond carbon and the impurity channels as well. Very importantly, conductivity of hybrid G-DNWs was verified via fabrication of a single G-DNW. Wherein, the better conductivity of G-DNW portion L2 was found as 2.4 ± 1.92 × 10(-6) mS/cm and revealed its effective applicability in near future. In addition to note, temperature dependent carrier transport mechanisms and activation energy calculations were reported in details in this work. Ultimately, to demonstrate the importance of our conductivity measurements, the possible mechanism behind the electrical transport and the comparative account on electrical resistivities of carbon based materials were provided.

  13. Reversible Sodium Ion Insertion in Single Crystalline Manganese Oxide Nanowires with Long Cycle Life

    SciTech Connect

    Cao, Yuliang; Xiao, Lifen; Wang, Wei; Choi, Daiwon; Nie, Zimin; Yu, Jianguo; Saraf, Laxmikant V.; Yang, Zhenguo; Liu, Jun

    2011-07-26

    Single crystalline Na4Mn9O18 nanowires were synthesized via pyrolysis of polyacrylate salt precursors prepared by in-situ polymerization of the metal salts and acrylate acid, followed by calcinations at an appropriate temperature to achieve good crystalline structure and uniform nanowire morphology with an average diameter of 50 nm. The Na4Mn9O18 nanowires have shown a high, reversible, and near theoretical sodium ion insertion capacity (128 mA h g-1 at 0.1C), excellent long cyclability (77% capacity retention for 1000 cycles at 0.5 C), along with good rate capability. Good capacity and charge-discharge stability are also observed for full cell experiments using a pyrolyzed carbon as the anode, therefore demonstrating the potential of these materials for sodium-ion batteries for large scale energy storage. Furthermore, this research shows that a good crystallinity and small particles are required to enhance the Na-ion diffusion and increase the stability of the electrode materials for long charge-discharge cycles.

  14. Optoelectronically probing the density of nanowire surface trap states to the single state limit

    SciTech Connect

    Dan, Yaping

    2015-02-02

    Surface trap states play a dominant role in the optoelectronic properties of nanoscale devices. Understanding the surface trap states allows us to properly engineer the device surfaces for better performance. But characterization of surface trap states at nanoscale has been a formidable challenge using the traditional capacitive techniques. Here, we demonstrate a simple but powerful optoelectronic method to probe the density of nanowire surface trap states to the single state limit. In this method, we choose to tune the quasi-Fermi level across the bandgap of a silicon nanowire photoconductor, allowing for capture and emission of photogenerated charge carriers by surface trap states. The experimental data show that the energy density of nanowire surface trap states is in a range from 10{sup 9 }cm{sup −2}/eV at deep levels to 10{sup 12 }cm{sup −2}/eV near the conduction band edge. This optoelectronic method allows us to conveniently probe trap states of ultra-scaled nano/quantum devices at extremely high precision.

  15. Single-crystal nanowires grown via electron-beam-induced deposition

    NASA Astrophysics Data System (ADS)

    Klein, K. L.; Randolph, S. J.; Fowlkes, J. D.; Allard, L. F.; Meyer, H. M., III; Simpson, M. L.; Rack, P. D.

    2008-08-01

    Electron-beam-induced deposition (EBID) is a useful technique for direct-writing of three-dimensional dielectric, semiconductor, and metallic materials with nanoscale precision and resolution. The EBID process, however, has been limited in many cases because precursor byproducts (typically from organic precursors like W(CO)6) are incorporated into the deposited material resulting in contaminated and amorphous structures. In this work, we have investigated the structure and composition of EBID tungsten nanostructures as-deposited from a tungsten hexafluoride (WF6) precursor. High resolution transmission electron microscopy, electron diffraction and electron spectroscopy were employed to determine the effects that the electron beam scanning conditions have on the deposit characteristics. The results show that slow, one-dimensional lateral scanning produces textured β-tungsten nanowire cores surrounded by an oxide secondary layer, while stationary vertical growth leads to single-crystal [100]-oriented W3O nanowires. Furthermore we correlate how the growth kinetics affect the resultant nanowire structure and composition.

  16. Design of broadband high-efficiency superconducting-nanowire single photon detectors

    NASA Astrophysics Data System (ADS)

    Redaelli, L.; Bulgarini, G.; Dobrovolskiy, S.; Dorenbos, S. N.; Zwiller, V.; Monroy, E.; Gérard, J. M.

    2016-06-01

    In this paper several designs to maximize the absorption efficiency of superconducting-nanowire single-photon detectors are investigated. Using a simple optical cavity consisting of a gold mirror and a SiO2 layer, the absorption efficiency can be boosted to over 97%: this result is confirmed experimentally by the realization of an NbTiN-based detector having an overall system detection efficiency of 85% at 1.31 μm. Calculations show that by sandwiching the nanowire between two dielectric Bragg reflectors, unity absorption (>99.9%) could be reached at the peak wavelength for optimized structures. To achieve broadband high efficiency, a different approach is considered: a waveguide-coupled detector. The calculations performed in this work show that, by correctly dimensioning the waveguide and the nanowire, polarization-insensitive detectors absorbing more than 95% of the injected photons over a wavelength range of several hundred nm can be designed. We propose a detector design making use of GaN/AlN waveguides, since these materials allow lattice-matched epitaxial deposition of Nb(Ti)N films and are transparent on a very wide wavelength range.

  17. Demonstration of digital readout circuit for superconducting nanowire single photon detector.

    PubMed

    Ortlepp, T; Hofherr, M; Fritzsch, L; Engert, S; Ilin, K; Rall, D; Toepfer, H; Meyer, H-G; Siegel, M

    2011-09-12

    We demonstrate the transfer of single photon triggered electrical pulses from a superconducting nanowire single photon detector (SNSPD) to a single flux quantum (SFQ) pulse. We describe design and test of a digital SFQ based SNSPD readout circuit and demonstrate its correct operation. Both circuits (SNSPD and SFQ) operate under the same cryogenic conditions and are directly connected by wire bonds. A future integration of the present multi-chip configuration seems feasible because both fabrication process and materials are very similar. In contrast to commonly used semiconductor amplifiers, SFQ circuits combine very low power dissipation (a few microwatts) with very high operation speed, thus enabling count-rates of several gigahertz. The SFQ interface circuit simplifies the SNSPD readout and enables large numbers of detectors for future compact multi-pixel systems with single photon counting resolution. The demonstrated circuit has great potential for scaling the present interface solution to 1,000 detectors by using a single SFQ chip.

  18. Atomistic Study of the Melting Behavior of Single Crystalline Wurtzite Gallium Nitride Nanowires

    SciTech Connect

    Wang, Zhiguo; Zu, Xiaotao; Gao, Fei; Weber, William J.

    2007-03-01

    Molecular dynamics (MD) simulation was used to study the melting behavior of GaN nanowires with Stillinger-Webber (SW) potential. Our results reveal that the melting of nanowires starts from the surface, and rapidly extends to the inner regions of nanowires as temperature increases. The melting temperature of GaN nanowires is lower than that of the bulk GaN, which may associate with large surfaces of nanowires. The melting temperatures increase to saturation values ~3100K and ~2900K when the diameters of nanowires are larger than 3.14 and 4.14 nm for nanowires with [100]- and [110]-oriented lateral facets, respectively.

  19. Single crystalline 3C-SiC nanowires grown on the diamond surface with the assistance of graphene

    NASA Astrophysics Data System (ADS)

    Dai, W.; Yu, J. H.; Wang, Y.; Song, Y. Z.; Bai, H.; Jiang, N.

    2015-06-01

    Single crystalline 3C-SiC nanowires were grown directly on the surface of bulk diamond in a catalyst-participated heating treatment process at 1300 °C. The iron powder was used as catalyst and graphene was served as the second carbon source during the reaction. The sample was characterized by Raman spectroscopy, scanning electron microscope (SEM), transmission electron microscope (TEM) and energy-dispersed X-ray (EDX). The results showed that the nanowires consisted of a crystalline 3C-SiC core that had a diameter of 40-60 nm and wrapped with about 10 nm amorphous SiO2 shell. Their lengths were up to several micrometers. The axes of nanowires lay along the [111] direction with a high density of stacking fault. Accordingly, we proposed graphene-assisted growth model to interpret the growth process of SiC nanowires on the diamond surface.

  20. Controllable Synthesis of Single-Crystalline CdO and Cd(OH)2Nanowires by a Simple Hydrothermal Approach

    PubMed Central

    2010-01-01

    Single-crystalline Cd(OH)2 or CdO nanowires can be selectively synthesized at 150 °C by a simple hydrothermal method using aqueous Cd(NO3)2 as precursor. The method is biosafe, and compared to the conventional oil-water surfactant approach, more environmental-benign. As revealed by the XRD results, CdO or Cd(OH)2 nanowires can be generated in high purity by varying the time of synthesis. The results of FESEM and HRTEM analysis show that the CdO nanowires are formed in bundles. Over the CdO-nanowire bundles, photoluminescence at ~517 nm attributable to near band-edge emission of CdO was recorded. Based on the experimental results, a possible growth mechanism of the products is proposed. PMID:20672033

  1. Large-scale synthesis and electrical transport properties of single-crystalline SmB6 nanowires

    NASA Astrophysics Data System (ADS)

    Zhou, Yong; Peng, Yuehua; Yin, Yanling; Zhou, Weichang; Zhou, Fang; Liu, Chang; Liu, Guangtong; Sun, Lianfeng; Tang, Dongsheng

    2016-07-01

    Topological Kondo insulator samarium hexaboride (SmB6) nanowires, with diameters of 60-150 nm and lengths up to 1-5 μm, were successfully synthesized in large scale by chemical vapor deposition using BCl3 and SmCl3 as precursors at 1070 °C. Transmission electron microscopy observation and selected area electron diffraction analysis indicate that SmB6 nanowires are single-crystalline and grow in a preferred direction of [1 0 0]. It also indicates that the growth of SmB6 nanowires might be governed by a vapor-solid mechanism. Conventional four-terminal resistance measurements show that the resistance of an SmB6 nanowire increases with decreasing temperature, but saturates at temperatures less than 10 K, which might be attributed to a true topological insulator with a metallic surface and fully insulating bulk states. Resistance measurements also indicate that the contribution of surface states to conductance in the SmB6 nanowire is enhanced remarkably; therefore the high-quality single-crystalline SmB6 nanowires with large surface-to-bulk ratio might be the best candidate for investigating the topological properties of this material.

  2. Electrical properties of single and multiple poly(3,4-ethylenedioxythiophene) nanowires for sensing nitric oxide gas.

    PubMed

    Lu, Hui-Hsin; Lin, Chia-Yu; Hsiao, Tzu-Chien; Fang, Yueh-Yuan; Ho, Kuo-Chuan; Yang, Dongfang; Lee, Chih-Kung; Hsu, Su-Ming; Lin, Chii-Wann

    2009-04-27

    The electrical properties of conducting polymer, poly(3,4-ethylenedioxythiophene) (PEDOT), nanowires were studied to develop nitric oxide (NO) gas sensors with low working temperatures. A nanowire with a diameter of 300 nm was fabricated using dip-pen nanolithography (DPN) across a 55 microm gap between a pair of electrodes. The electrical properties of single or multiple PEDOT nanowires were examined by plotting the current-voltage (I-V) curves in the range -3 V to +3 V at temperatures between 298 K and 393 K. The conductance of parallel wires was normalized with respect to the dimensions of the fabricated nanowires. The single nanowire exhibited nonlinear conductance associated with hysteresis but multiple wires did not. The currents increased with the temperature and the I-V characteristics were consistent with the power law G(T)alphaT(alpha) with alpha approximately 5.14 and 5.43. The responses to NO were highly linear and reproducible, indicating that sensing using PEDOT nanowires was reliable with a minimal concentration of NO of 10 ppm.

  3. Growth and Physical Property Study of Single Nanowire (Diameter ~45 nm) of Half Doped Manganite

    DOE PAGES

    Datta, Subarna; Chandra, Sayan; Samanta, Sudeshna; ...

    2013-01-01

    We repormore » t here the growth and characterization of functional oxide nanowire of hole doped manganite of La 0.5 Sr 0.5 MnO 3 (LSMO). We also report four-probe electrical resistance measurement of a single nanowire of LSMO (diameter ~45 nm) using focused ion beam (FIB) fabricated electrodes. The wires are fabricated by hydrothermal method using autoclave at a temperature of 270 °C. The elemental analysis and physical property like electrical resistivity are studied at an individual nanowire level. The quantitative determination of Mn valency and elemental mapping of constituent elements are done by using Electron Energy Loss Spectroscopy (EELS) in the Transmission Electron Microscopy (TEM) mode. We address the important issue of whether as a result of size reduction the nanowires can retain the desired composition, structure, and physical properties. The nanowires used are found to have a ferromagnetic transition ( T C ) at around 325 K which is very close to the bulk value of around 330 K found in single crystal of the same composition. It is confirmed that the functional behavior is likely to be retained even after size reduction of the nanowires to a diameter of 45 nm. The electrical resistivity shows insulating behavior within the measured temperature range which is similar to the bulk system.« less

  4. Fabrication of single Ga-doped ZnS nanowires as high-gain photosensors by focused ion beam deposition.

    PubMed

    Yen, Shih-Hsiang; Hung, Yu-Chen; Yeh, Ping-Hung; Su, Ya-Wen; Wang, Chiu-Yen

    2017-09-27

    ZnS nanowires were synthesized via a vapor-liquid-solid mechanism and then fabricated into a single-nanowire field-effect transistor by focused ion beam (FIB) deposition. The field-effect electrical properties of the FIB-fabricated ZnS nanowire device, namely conductivity, mobility and hole concentration, were 9.13 Ω(-1) cm(-1), 13.14 cm(2) V(-1) s(-1)and 4.27 × 10(18) cm(-3), respectively. The photoresponse properties of the ZnS nanowires were studied and the current responsivity, current gain, response time and recovery time were 4.97 × 10(6) A W(-1), 2.43 × 10(7), 9 s and 24 s, respectively. Temperature-dependent I-V measurements were used to analyze the interfacial barrier height between ZnS and the FIB-deposited Pt electrode. The results show that the interfacial barrier height is as low as 40 meV. The energy-dispersive spectrometer elemental line scan shows the influence of Ga ions on the ZnS nanowire surface on the FIB-deposited Pt contact electrodes. The results of temperature-dependent I-V measurements and the elemental line scan indicate that Ga ions were doped into the ZnS nanowire, reducing the barrier height between the FIB-deposited Pt electrodes and the single ZnS nanowire. The small barrier height results in the FIB-fabricated ZnS nanowire device acting as a high-gain photosensor.

  5. Fabrication of single Ga-doped ZnS nanowires as high-gain photosensors by focused ion beam deposition

    NASA Astrophysics Data System (ADS)

    Yen, Shih-Hsiang; Hung, Yu-Chen; Yeh, Ping-Hung; Su, Ya-Wen; Wang, Chiu-Yen

    2017-09-01

    ZnS nanowires were synthesized via a vapor–liquid–solid mechanism and then fabricated into a single-nanowire field-effect transistor by focused ion beam (FIB) deposition. The field-effect electrical properties of the FIB-fabricated ZnS nanowire device, namely conductivity, mobility and hole concentration, were 9.13 Ω‑1 cm‑1, 13.14 cm2 V‑1 s‑1and 4.27 × 1018 cm‑3, respectively. The photoresponse properties of the ZnS nanowires were studied and the current responsivity, current gain, response time and recovery time were 4.97 × 106 A W‑1, 2.43 × 107, 9 s and 24 s, respectively. Temperature-dependent I–V measurements were used to analyze the interfacial barrier height between ZnS and the FIB-deposited Pt electrode. The results show that the interfacial barrier height is as low as 40 meV. The energy-dispersive spectrometer elemental line scan shows the influence of Ga ions on the ZnS nanowire surface on the FIB-deposited Pt contact electrodes. The results of temperature-dependent I–V measurements and the elemental line scan indicate that Ga ions were doped into the ZnS nanowire, reducing the barrier height between the FIB-deposited Pt electrodes and the single ZnS nanowire. The small barrier height results in the FIB-fabricated ZnS nanowire device acting as a high-gain photosensor.

  6. The role of the coherence length for the establishment of global phase coherence in arrays of ultra-thin superconducting nanowires

    NASA Astrophysics Data System (ADS)

    Wong, Chi Ho; Lam, Frank L. Y.; Shen, Junying; He, Minquan; Hu, Xijun; Lortz, Rolf

    2017-10-01

    We have fabricated 5 nm ultra-thin NbN nanowires that form a dense and regular array in the linear channels of mesoporous SBA-15 silica substrates. Bulk NbN is a well-known classical superconductor with T c of 16 K. We show that, by being incorporated into this nanostructure, the composite material exhibits typical quasi-one-dimensional characteristics. We compare the superconducting properties with those of superconducting Pb nanowires of the same dimensionality in identical configuration within the linear SBA-15 pores. While Pb nanowire arrays show a pronounced crossover from 1D superconductivity at high temperatures to a 3D bulk superconducting state in the low-temperature regime with true zero resistance triggered by transversal Josephson interaction, this transition appears to be completely absent in the NbN nanowire array. The small coherence length in NbN, which strongly suppresses the Josephson coupling is discussed as the origin of this difference.

  7. Nanojunctions in conducting polypyrrole single nanowire made by focused electron beam: Charge transport characteristics

    SciTech Connect

    Koo, Min Ho; Hong, Young Ki; Park, Dong Hyuk; Jo, Seong Gi; Joo, Jinsoo

    2011-07-15

    A focused electron (E)-beam with various doses was irradiated on the intended positions of conducting polypyrrole (PPy) single nanowire (NW) to fabricate nanojunctions. The current-voltage characteristics and their temperature dependence of the PPy single NW with nanojunctions were measured and analyzed. By increasing the E-beam dose and the number of nanojunctions, the current level of the single NW was dramatically decreased, and the conductance gap became more severe as the temperature decreased. The charge transport behavior varied from three-dimensional variable range hopping to fluctuation induced tunneling models, depending on the dose of focused E-beam. From micro-Raman spectra, the focused E-beam irradiation induced the de-doped states and conformational modification of polymer chains in the nanojunctions. The results suggest that the nanojunctions made by focused E-beam acted as a quasi-potential barrier for charge conduction in the conducting PPy single NW.

  8. Single nanowire green InGaN/GaN light emitting diodes.

    PubMed

    Zhang, Guogang; Li, Ziyuan; Yuan, Xiaoming; Wang, Fan; Fu, Lan; Zhuang, Zhe; Ren, Fang-Fang; Bin Liu; Zhang, Rong; Tan, Hark Hoe; Jagadish, Chennupati

    2016-09-23

    Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

  9. Single nanowire green InGaN/GaN light emitting diodes

    NASA Astrophysics Data System (ADS)

    Zhang, Guogang; Li, Ziyuan; Yuan, Xiaoming; Wang, Fan; Fu, Lan; Zhuang, Zhe; Ren, Fang-Fang; Liu, Bin; Zhang, Rong; Tan, Hark Hoe; Jagadish, Chennupati

    2016-10-01

    Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

  10. Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire.

    PubMed

    Hultin, Olof; Otnes, Gaute; Borgström, Magnus T; Björk, Mikael; Samuelson, Lars; Storm, Kristian

    2016-01-13

    We compare and discuss the two most commonly used electrical characterization techniques for nanowires (NWs). In a novel single-NW device, we combine Hall effect and back-gated and top-gated field effect measurements and quantify the carrier concentrations in a series of sulfur-doped InP NWs. The carrier concentrations from Hall effect and field effect measurements are found to correlate well when using the analysis methods described in this work. This shows that NWs can be accurately characterized with available electrical methods, an important result toward better understanding of semiconductor NW doping.

  11. UV-sensitive superconducting nanowire single photon detectors for integration in an ion trap

    NASA Astrophysics Data System (ADS)

    Slichter, D. H.; Verma, V. B.; Leibfried, D.; Mirin, R. P.; Nam, S. W.; Wineland, D. J.

    2017-04-01

    We demonstrate superconducting nanowire single photon detectors with 76 +/- 4 % system detection efficiency at a wavelength of 315 nm and an operating temperature of 3.2 K, with a background count rate below 1 count per second at saturated detection efficiency. We propose integrating these detectors into planar surface electrode radio-frequency Paul traps for use in trapped ion quantum information processing. We operate detectors integrated into test ion trap structures at 3.8 K both with and without typical radio-frequency trapping electric fields. The trapping fields reduce system detection efficiency by 9 %, but do not increase background count rates.

  12. Ferromagnetic resonance of a single magnetic nanowire measured with an on-chip microwave interferometer.

    PubMed

    Zhang, Hanqiao; Divan, Ralu; Wang, Pingshan

    2011-05-01

    An on-chip microwave interferometer suitable for high-sensitivity nanoscale magnetic material characterization is proposed. The device cancels the background parasitic common mode noise automatically. The magnetization dynamics of a 240 nm wide, 5 μm long, and 70 nm thick single permalloy nanowire is investigated. Compared with a prototype device proposed previously, the proposed device has a more than 20 dB sensitivity improvement. Full wave three-dimensional simulation shows that the device has the capability of studying the fundamental physics of nanoscale magnetic devices.

  13. Sugar nanowires based on cyclodextrin prepared by single particle nanofabrication technique

    NASA Astrophysics Data System (ADS)

    Watanabe, Shogo; Asano, Atsushi; Seki, Shu; Sugimoto, Masaki; Yoshikawa, Masahito; Seiichi, Tagawa; Tsukuda, Satoshi; Tanaka, Shun-Ichiro

    2009-12-01

    The direct formation of nanowires consisting of cyclodextrins by single particle nanofabrication technique (SPNT) is investigated in the present paper. Substittuted cyclodextrin (CD) derivatives and their composite with poly(4-bromostyrene) caused efficient cross-linking reaction upon irradiation, and gave nanostructures by SPNT. Successful visualization of the nanostructures by atomic force microscopy suggested drastic increase in the surface area of the materials based on CDs, leading to considerable increase in the selective adsorption efficiency of the molecules fit to the size of the hydrophobic holes of CDs.

  14. Exciton-plasmon coupling of a single quantum dot and a metal nanowire

    NASA Astrophysics Data System (ADS)

    Wei, Hong

    2016-11-01

    The interactions between surface plasmons in metal nanostructures and excitons in quantum emitters lead to many interesting phenomena that are strongly dependent on the quantum yield of surface plasmons. The experimental measurement of this quantum yield is hindered due to the difficulty in distinguishing all the possible exciton recombination channels. By utilizing the propagation of surface plasmons, we experimentally measured the decay rates of all exciton recombination channels, and thus obtained the quantum yield of single surface plasmons generated by a quantum dot coupled with a silver nanowire.

  15. NbN superconducting nanonetwork fabricated using porous silicon templates and high-resolution electron beam lithography.

    PubMed

    Salvato, Matteo; Baghdadi, Reza; Cirillo, Carla; Prischepa, Serghej L; Dolgiy, Alexey; Bondarenko, Vitaly; Lombardi, Floriana; Attanasio, Carmine

    2017-08-07

    Superconducting NbN nanonetworks with a very small number of interconnected nanowires, with diameter of the order of 4 nm, are fabricated combining a bottom-up (use of porous silicon nanotemplates) with a top-down technique (high-resolution electron beam lithography). The method is easy to control and allows to fabricate, on a robust support, devices with electrical properties close to a one-dimensional superconductor that can be fruitfully used for novel applications. © 2017 IOP Publishing Ltd.

  16. Waveguide integrated low noise NbTiN nanowire single-photon detectors with milli-Hz dark count rate

    PubMed Central

    Schuck, Carsten; Pernice, Wolfram H. P.; Tang, Hong X.

    2013-01-01

    Superconducting nanowire single-photon detectors are an ideal match for integrated quantum photonic circuits due to their high detection efficiency for telecom wavelength photons. Quantum optical technology also requires single-photon detection with low dark count rate and high timing accuracy. Here we present very low noise superconducting nanowire single-photon detectors based on NbTiN thin films patterned directly on top of Si3N4 waveguides. We systematically investigate a large variety of detector designs and characterize their detection noise performance. Milli-Hz dark count rates are demonstrated over the entire operating range of the nanowire detectors which also feature low timing jitter. The ultra-low dark count rate, in combination with the high detection efficiency inherent to our travelling wave detector geometry, gives rise to a measured noise equivalent power at the 10−20 W/Hz1/2 level. PMID:23714696

  17. Fabrication, characterization, and kinetic study of vertical single-crystalline CuO nanowires on Si substrates

    PubMed Central

    2012-01-01

    We report here on the first study of the growth kinetics of high-yield, vertical CuO nanowires on silicon substrates produced by the process of thermal oxidation. The length of the CuO nanowires could be tuned from several to tens of micrometers by adjusting the oxidation temperature and time. The grown CuO nanowires were determined to be single-crystalline with different axial crystallographic orientations. After a series of scanning electron microscopy examinations, the average length of CuO nanowires produced at each temperature was found to follow a parabolic relationship with the oxidation time. The parabolic growth rate at different oxidation temperatures was measured. The activation energy for the growth of CuO nanowires calculated from an Arrhenius plot was found to be about 174.2 kJ/mole. In addition, the current-voltage characterization indicated that the sample with high-density CuO nanowires exhibited ohmic behavior, and its resistance was found to significantly decrease with increasing environmental temperature. The result can be attributed to an increase in the number of carriers at higher temperatures. PMID:22330902

  18. Unraveling the strain state of GaN down to single nanowires

    NASA Astrophysics Data System (ADS)

    Auzelle, Thomas; Biquard, Xavier; Bellet-Amalric, Edith; Fang, Zhihua; Roussel, Hervé; Cros, Ana; Daudin, Bruno

    2016-12-01

    GaN nanowires (NWs) grown by molecular beam epitaxy are usually assumed free of strain in spite of different individual luminescence signatures. To ascertain this usual assumption, the c/a of a GaN NW assembly has been characterized using both X-ray diffraction and Raman spectroscopy, with scaling the measurement down to the single NW. Free-standing single NWs have been observed free of strain—defined as [c /a -(c/a ) o]/(c/a ) o —within the experimental accuracy amounting to 1.25 × 10-4. However, in the general case, a significant portion of the NWs is coalesced, generating an average tensile strain that can be partly released by detaching the NWs from their substrates. It is concluded that at the scale of the single NW, the free surface and the residual doping do not generate a significant strain and only coalescence does.

  19. Single-plasmon scattering grating using nanowire surface plasmon coupled to nanodiamond nitrogen-vacancy center.

    PubMed

    Li, Jiahua; Yu, Rong

    2011-10-10

    We investigate the scattering properties of a single surface plasmon in metal nanowire coupled to a nitrogen-vacancy (NV) center in diamond nanocrystal under optical excitation. We demonstrate that, by spatially modulating a classical control beam, alternating regions of high reflection and absorption as well as high transmission and absorption of a single plasmon can be created in the left- and right-going directions that act as a kind of scattering grating. Such approach to induce grating gets out the well investigating region in which the weak interactions between single atoms and light is often used. The proposal may be used for chip-integrated grating, switcher and multi-channel drop filter.

  20. Concerted single-nanowire absorption and emission spectroscopy: Explaining the origin of the size-dependent Stokes shift in single cadmium selenide nanowires

    NASA Astrophysics Data System (ADS)

    Vietmeyer, F.; Chatterjee, R.; McDonald, M. P.; Kuno, M.

    2015-02-01

    Concerted single-nanowire (NW) absorption and emission spectroscopies have been used to measure Stokes shifts in the optical response of individual CdSe NWs. Obtained spectra are free of inhomogeneous broadening inherent to ensemble measurements. They reveal apparent size-dependent NW Stokes shifts with magnitudes on the order of 30 meV. Given that an effective mass model previously used to explain CdSe NW excited state progressions predicts no sizable emission Stokes shift, we have investigated modifications to the theory to rationalize their existence. This has entailed better accounting for the effects of crystal field splitting on NW band edge states. What results are important changes to the spectroscopic assignment of NW band edge transitions that arise from the crossing of hole levels. Furthermore, these modifications simultaneously predict Stokes shifts with size-dependent magnitudes up to 20 meV. However, quantitative agreement with experiment is only achieved by accounting for the role of exciton trap states. Consequently, we conclude that CdSe NW Stokes shifts contain both intrinsic and extrinsic contributions—the latter arising from band edge exciton potential energy fluctuations. At a broader level, these concerted absorption and emission measurements have provided detailed insight into the electronic structure of CdSe NWs, beyond what could be obtained using either single-particle absorption or emission spectroscopies alone.

  1. Berry's phase manifestation in Aharonov-Bohm oscillations in single Bi nanowires

    NASA Astrophysics Data System (ADS)

    Gitsu, D. V.; Huber, T. E.; Konopko, L. A.; Nikolaeva, A. A.

    2009-02-01

    Here we report on Aharonov-Bohm oscillations of magnetoresistance (MR) of the single Bi nanowires with diameter d<80 nm. The samples were prepared by Ulitovsky technique and represented cylindrical single crystals with the 1011 orientation along the wire axis. Due to semimetal-to-semiconductor transformation and big density of surface states with strong spin-orbit interactions Bi nanowire should effectively become a conducting tube. The equidistant oscillations of the MR have been observed in a wide range of magnetic fields up to 14 T at various temperatures (1.5 K< T< 4.2 K) and angles θ (0< θ < 90°) of the sample orientation relative to the magnetic field. We have obtained longitudinal MR oscillations with periods ΔB1=Φ0/S and ΔB2=Φ0/2S, where Φ0=h/e is the flux quantum and S is the wire cross section. From B approx 8 T down to B=0 the extremums of Φ0/2S oscillations are shifted up to 3π at B=0 which is the manifestation of Berry phase shift due to carriers moving in inhomogeneous magnetic field. An interpretation of the MR oscillations in terms of a subband structure in the surface state band caused by quantum interference is presented.

  2. Quantifying the traction force of a single cell by aligned silicon nanowire array.

    PubMed

    Li, Zhou; Song, Jinhui; Mantini, Giulia; Lu, Ming-Yen; Fang, Hao; Falconi, Christian; Chen, Lih-Juann; Wang, Zhong Lin

    2009-10-01

    The physical behaviors of stationary cells, such as the morphology, motility, adhesion, anchorage, invasion and metastasis, are likely to be important for governing their biological characteristics. A change in the physical properties of mammalian cells could be an indication of disease. In this paper, we present a silicon-nanowire-array based technique for quantifying the mechanical behavior of single cells representing three distinct groups: normal mammalian cells, benign cells (L929), and malignant cells (HeLa). By culturing the cells on top of NW arrays, the maximum traction forces of two different tumor cells (HeLa, L929) have been measured by quantitatively analyzing the bending of the nanowires. The cancer cell exhibits a larger traction force than the normal cell by approximately 20% for a HeLa cell and approximately 50% for a L929 cell. The traction forces have been measured for the L929 cells and mechanocytes as a function of culture time. The relationship between cells extending area and their traction force has been investigated. Our study is likely important for studying the mechanical properties of single cells and their migration characteristics, possibly providing a new cellular level diagnostic technique.

  3. Metastable Copper-Phthalocyanine Single-Crystal Nanowires and Their Use in Fabricating High-Performance Field-Effect Transistors

    SciTech Connect

    Xiao, Kai; Li, Rongjin; Tao, Jing; Payzant, E Andrew; Ivanov, Ilia N; Puretzky, Alexander A; Hu, Wenping; Geohegan, David B

    2009-01-01

    This paper describes a simple, vapor-phase route to the synthesis of metastable α-phase copper-phthalocyanine (CuPc) single-crystal nanowires through control of the growth temperature. The influence of the growth temperature on the crystal structures, morphology, and size of the CuPc nanostructures was explored by XRD, optical absorption and Transmission Electron Microscopy (TEM). α-CuPc nanowires were successfully incorporated as active semiconductors in field-effect transistors (FETs). Single nanowire devices exhibited the carrier mobilities and current on/off ratios as high as 0.4 cm2/Vs and > 104, respectively, rendering them useful for organic photovoltaic cells, organic light-emitting diodes, field-effect transistors, memories and gas sensors

  4. Enhanced non-volatile resistive switching in suspended single-crystalline ZnO nanowire with controllable multiple states

    NASA Astrophysics Data System (ADS)

    Zhang, Rui; Pang, Wei; Zhang, Qing; Chen, Yan; Chen, Xuejiao; Feng, Zhihong; Yang, Jianhua; Zhang, Daihua

    2016-08-01

    Resistive switching nanostructures are a promising candidate for next-generation non-volatile memories. In this report, we investigate the switching behaviors of single-crystalline ZnO nanowires suspended in air. They exhibit significantly higher current density, lower switching voltage, and more pronounced multiple conductance states compared to nanowires in direct contact with substrate. We attribute the effect to enhanced Joule heating efficiency, reduced surface scattering, and more significantly, the positive feedback established between the current density and local temperature in the suspended nanowires. The proposed mechanism has been quantitatively examined by finite element simulations. We have also demonstrated an innovative approach to initiating the current-temperature mutual enhancement through illumination by ultraviolet light, which further confirmed our hypothesis and enabled even greater enhancement. Our work provides further insight into the resistive switching mechanism of single-crystalline one-dimensional nanostructures, and suggests an effective means of performance enhancement and device optimization.

  5. Enhanced non-volatile resistive switching in suspended single-crystalline ZnO nanowire with controllable multiple states.

    PubMed

    Zhang, Rui; Pang, Wei; Zhang, Qing; Chen, Yan; Chen, Xuejiao; Feng, Zhihong; Yang, Jianhua; Zhang, Daihua

    2016-06-27

    Resistive switching nanostructures are a promising candidate for next-generation non-volatile memories. In this report, we investigate the switching behaviors of single-crystalline ZnO nanowires suspended in air. They exhibit significantly higher current density, lower switching voltage, and more pronounced multiple conductance states compared to nanowires in direct contact with substrate. We attribute the effect to enhanced Joule heating efficiency, reduced surface scattering, and more significantly, the positive feedback established between the current density and local temperature in the suspended nanowires. The proposed mechanism has been quantitatively examined by finite element simulations. We have also demonstrated an innovative approach to initiating the current-temperature mutual enhancement through illumination by ultraviolet light, which further confirmed our hypothesis and enabled even greater enhancement. Our work provides further insight into the resistive switching mechanism of single-crystalline one-dimensional nanostructures, and suggests an effective means of performance enhancement and device optimization.

  6. Study of the Electrochemical System of Antimony-Tellurium in Dimethyl Sulfoxide for Growth of Nanowire Arrays, and an Innovative Method for Single Nanowire Measurements

    NASA Astrophysics Data System (ADS)

    Kalisman, Philip Taubman

    There is a strong interest in thermoelectric materials for energy production and savings. The properties which are integral to thermoelectric performance are typically linked, typically changing one of these properties for the better will change another for the worse. The intertwined nature of these properties has limited bulk thermoelectrics to low efficiencies, which has curbed their use to only niche applications. There has been theoretical and experimental work which has shown that limiting these materials in one or more dimensions will result in deconvolution of properties. Nanowires of well established thermoelectrics should show impressively high performance. Tellurium is attractive in many fields, including thermoelectrics. Nanowires of tellurium have been grown, but with limited success and with out the ability to dope the tellurium. Working on previous work with other systems, tellurium was studied in dimethyl sulfoxide (DMSO). The electrochemical system of tellurium was found to be quite dierent from its aqueous analog, but through comprehensive cyclic voltammetric study, all events were identified and explained. The binary antimony-tellurium system was also studied, as doping of tellurium is integral for many applications. Cyclic voltammograms of this system were studied, and the insight from these studies was used to grow nanowire arrays. Arrays of tellurium were grown and analysis showed that by using DMSO, antimony doped tellurium nanowire arrays could be grown. Furthermore, analysis showed that the antimony doped tellurium interstitially, resulting in a n-type material. Measurements were also performed on arrays and individual wires. Arrays of 1.15% antimony showed ZT of 0.092, with the low ZT attributed to poor contact methods. Although contacting was an obstacle towards measuring whole arrays, single wire measurements were also performed. Single wire measurements were done by a novel method which allows for easy, reproducible measurements of wire

  7. Effect of irradiation on DNA synthesis, NBN gene expression and chromosomal stability in cells with NBN mutations

    PubMed Central

    Nowak, Jerzy; Świątek-Kościelna, Bogna; Kałużna, Ewelina M.; Rembowska, Jolanta; Dzikiewicz-Krawczyk, Agnieszka; Zawada, Mariola

    2017-01-01

    Introduction The NBN gene product is part of the MRE11/RAD50/NBN complex, which plays an essential role in genomic stability. In the study we try to answer the question what is the effect of irradiation on DNA synthesis, NBN gene expression and chromosomal stability in cells with homozygous c.657-661del, and heterozygous c.657-661del, p.I171V and p.R215W NBN gene mutations. Material and methods Immortalized B-lymphocytes with NBN gene mutations were X-ray irradiated at doses of 1, 2, 5 and 8 Gy/min. Radioresistant DNA synthesis rate and the percentage of cells in phase S was analyzed by 3H thymidine and BrdU incorporation assays. NBN gene expression was quantified by real-time PCR with TaqMan fluorescent probe. Results Increasing the irradiation dose resulted in gradual decrease of 3H thymidine incorporation in all cells, but significantly only in homo- and heterozygous c.657-661del cells (p-values < 0.0001). After irradiation the relative expression of NBN was significantly higher in homozygous c.657-661del and heterozygous p.R215W cells as compared to heterozygous c.657-661del, p.I171V and control cells (p < 0.01). All cells with NBN gene mutations showed significantly higher total number of chromosomal aberrations per metaphase as compared to control cells, with the highest number of aberrations in homozygous c.657-661del cells (p < 0.001). Conclusions The results obtained indicate that homozygous c.657-661del mutation affects cell sensitivity to irradiation. Moreover, homozygous variant is associated with disturbance in the activation of cell cycle checkpoints and with defects in DNA repair. In turn, heterozygous c.657-661del, p.R215W and p.I171V mutations do not substantially alter the radiosensitivity. PMID:28261280

  8. Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires

    NASA Astrophysics Data System (ADS)

    Park, Tae-Eon; Park, Youn Ho; Lee, Jong-Min; Kim, Sung Wook; Park, Hee Gyum; Min, Byoung-Chul; Kim, Hyung-Jun; Koo, Hyun Cheol; Choi, Heon-Jin; Han, Suk Hee; Johnson, Mark; Chang, Joonyeon

    2017-06-01

    Semiconductor spintronics is an alternative to conventional electronics that offers devices with high performance, low power and multiple functionality. Although a large number of devices with mesoscopic dimensions have been successfully demonstrated at low temperatures for decades, room-temperature operation still needs to go further. Here we study spin injection in single-crystal gallium nitride nanowires and report robust spin accumulation at room temperature with enhanced spin injection polarization of 9%. A large Overhauser coupling between the electron spin accumulation and the lattice nuclei is observed. Finally, our single-crystal gallium nitride samples have a trigonal cross-section defined by the (001), () and () planes. Using the Hanle effect, we show that the spin accumulation is significantly different for injection across the (001) and () (or ()) planes. This provides a technique for increasing room temperature spin injection in mesoscopic systems.

  9. Single-crystalline δ-Ni2Si nanowires with excellent physical properties

    PubMed Central

    2013-01-01

    In this article, we report the synthesis of single-crystalline nickel silicide nanowires (NWs) via chemical vapor deposition method using NiCl2·6H2O as a single-source precursor. Various morphologies of δ-Ni2Si NWs were successfully acquired by controlling the growth conditions. The growth mechanism of the δ-Ni2Si NWs was thoroughly discussed and identified with microscopy studies. Field emission measurements show a low turn-on field (4.12 V/μm), and magnetic property measurements show a classic ferromagnetic characteristic, which demonstrates promising potential applications for field emitters, magnetic storage, and biological cell separation. PMID:23782805

  10. Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires

    PubMed Central

    Park, Tae-Eon; Park, Youn Ho; Lee, Jong-Min; Kim, Sung Wook; Park, Hee Gyum; Min, Byoung-Chul; Kim, Hyung-jun; Koo, Hyun Cheol; Choi, Heon-Jin; Han, Suk Hee; Johnson, Mark; Chang, Joonyeon

    2017-01-01

    Semiconductor spintronics is an alternative to conventional electronics that offers devices with high performance, low power and multiple functionality. Although a large number of devices with mesoscopic dimensions have been successfully demonstrated at low temperatures for decades, room-temperature operation still needs to go further. Here we study spin injection in single-crystal gallium nitride nanowires and report robust spin accumulation at room temperature with enhanced spin injection polarization of 9%. A large Overhauser coupling between the electron spin accumulation and the lattice nuclei is observed. Finally, our single-crystal gallium nitride samples have a trigonal cross-section defined by the (001), () and () planes. Using the Hanle effect, we show that the spin accumulation is significantly different for injection across the (001) and () (or ()) planes. This provides a technique for increasing room temperature spin injection in mesoscopic systems. PMID:28569767

  11. Single crystal semiconductor micropillar and nanowire on amorphous substrates for low cost solar hydrogen generation

    NASA Astrophysics Data System (ADS)

    Logeeswaran, V. J.; Katzenmeyer, Aaron M.; Kwon, Min-Ki; Kim, Ja-Yeon; Islam, M. Saif

    2009-08-01

    We report a novel method to fabricating single crystal and highly oriented 1-D Silicon micropillars and nanowires and then transferring them to coat a target surface of any topology using an innovative harvest/lift-off process. This method enables highly crystalline micro- and nano- pillars of different materials with diverse bandgaps and physical properties to be fabricated on appropriate mother substrates and transferred to form multilayered 3D stacks for multifunctional devices. This approach not only ensures the incorporation of any kind of material (with the best device characteristics) on a single substrate facilitating substrate-free device fabrications on any topology, but also allows the repeated use of a mother substrate for continual production of new devices. This capability of fabricating substrate-less devices will offer a universal platform for material integration and allow solar active devices to be coated on various surface topologies that would be suitable for solar hydrogen generation.

  12. Epitaxially aligned cuprous oxide nanowires for all-oxide, single-wire solar cells.

    PubMed

    Brittman, Sarah; Yoo, Youngdong; Dasgupta, Neil P; Kim, Si-in; Kim, Bongsoo; Yang, Peidong

    2014-08-13

    As a p-type semiconducting oxide that can absorb visible light, cuprous oxide (Cu2O) is an attractive material for solar energy conversion. This work introduces a high-temperature, vapor-phase synthesis that produces faceted Cu2O nanowires that grow epitaxially along the surface of a lattice-matched, single-crystal MgO substrate. Individual wires were then fabricated into single-wire, all-oxide diodes and solar cells using low-temperature atomic layer deposition (ALD) of TiO2 and ZnO films to form the heterojunction. The performance of devices made from pristine Cu2O wires and chlorine-exposed Cu2O wires was investigated under one-sun and laser illumination. These faceted wires allow the fabrication of well-controlled heterojunctions that can be used to investigate the interfacial properties of all-oxide solar cells.

  13. Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires.

    PubMed

    Park, Tae-Eon; Park, Youn Ho; Lee, Jong-Min; Kim, Sung Wook; Park, Hee Gyum; Min, Byoung-Chul; Kim, Hyung-Jun; Koo, Hyun Cheol; Choi, Heon-Jin; Han, Suk Hee; Johnson, Mark; Chang, Joonyeon

    2017-06-01

    Semiconductor spintronics is an alternative to conventional electronics that offers devices with high performance, low power and multiple functionality. Although a large number of devices with mesoscopic dimensions have been successfully demonstrated at low temperatures for decades, room-temperature operation still needs to go further. Here we study spin injection in single-crystal gallium nitride nanowires and report robust spin accumulation at room temperature with enhanced spin injection polarization of 9%. A large Overhauser coupling between the electron spin accumulation and the lattice nuclei is observed. Finally, our single-crystal gallium nitride samples have a trigonal cross-section defined by the (001), () and () planes. Using the Hanle effect, we show that the spin accumulation is significantly different for injection across the (001) and () (or ()) planes. This provides a technique for increasing room temperature spin injection in mesoscopic systems.

  14. Resistance of a single domain wall in (Co/Pt)7 multilayer nanowires.

    PubMed

    Hassel, C; Brands, M; Lo, F Y; Wieck, A D; Dumpich, G

    2006-12-01

    Single (Co/Pt)_{7} multilayer nanowires prepared by electron beam lithography with perpendicular magnetic anisotropy are locally modified by means of Ga-ion implantation generating 180 degrees domain walls which are pinned at the edges of underlying thin Pt wires. Since we can exclude contributions from the anisotropic and the Lorentz magnetoresistance this allows us to determine the resistance of a single domain wall at room temperature. We find a positive relative resistance increase of DeltaR/R=1.8% inside the domain wall which agrees well with the model of Levy and Zhang [Phys. Rev. Lett. 79, 5110 (1997)10.1103/PhysRevLett.79.5110].

  15. Frequency-resolved optical gating measurement of ultrashort pulses by using single nanowire

    NASA Astrophysics Data System (ADS)

    Yu, Jiaxin; Liao, Feng; Gu, Fuxing; Zeng, Heping

    2016-09-01

    The use of ultrashort pulses for fundamental studies and applications has been increasing rapidly in the past decades. Along with the development of ultrashort lasers, exploring new pulse diagnositic approaches with higher signal-to-noise ratio have attracted great scientific and technological interests. In this work, we demonstrate a simple technique of ultrashort pulses characterization with a single semiconductor nanowire. By performing a frequency-resolved optical gating method with a ZnO nanowire coupled to tapered optical microfibers, the phase and amplitude of a pulse series are extracted. The generated signals from the transverse frequency conversion process can be spatially distinguished from the input, so the signal-to-noise ratio is improved and permits lower energy pulses to be identified. Besides, since the nanometer scale of the nonlinear medium provides relaxed phase-matching constraints, a measurement of 300-nm-wide supercontinuum pulses is achieved. This system is highly compatible with standard optical fiber systems, and shows a great potential for applications such as on-chip optical communication.

  16. Ternary Synaptic Plasticity Arising from Memdiode Behavior of TiOx Single Nanowire

    NASA Astrophysics Data System (ADS)

    Hong, Deshun; Chen, Yuansha; Sun, Jirong; Shen, Baogen; Group 3 of Magnetism Laboratory, Beijing National LaboratoryCondensed Matter Physics Team

    Electric field-induced resistive switching (RS) effect has been widely explored as a novel nonvolatile memory over the past few years. Recently, the RS behavior with continuous transition has received considerable attention for its promising prospect in neuromorphic simulation. Here, the switching characteristics of a planar-structured TiOx single nanowire device were systematically investigated. It exhibited a strong electrical history-dependent rectifying behavior that was defined as a ''memdiode''. We further demonstrated that a ternary synaptic plasticity could be realized in such a TiOx nanowire device, characterized by the resistance and photocurrent responses. For a given state of the memdiode, a conjugated memristive characteristic and a distinct photocurrent can be simulaneously obtained, resulting in a synchronous implementation of various Hebbian plasticities with the same temporal order of spikes. These intriguing properties of TiOx memdiode provide a feasible way toward the designing of multifunctional electronic synapses as well as programmable artificial neural network This work has been partially supported by the National Basic Research of China (2013CB921700), the ``Strategic Priority Research Program (B)'' of the Chinese Academy of Sciences (XDB07030200) and the National Natural Science Foundation of China (11374339).

  17. Frequency-resolved optical gating measurement of ultrashort pulses by using single nanowire

    PubMed Central

    Yu, Jiaxin; Liao, Feng; Gu, Fuxing; Zeng, Heping

    2016-01-01

    The use of ultrashort pulses for fundamental studies and applications has been increasing rapidly in the past decades. Along with the development of ultrashort lasers, exploring new pulse diagnositic approaches with higher signal-to-noise ratio have attracted great scientific and technological interests. In this work, we demonstrate a simple technique of ultrashort pulses characterization with a single semiconductor nanowire. By performing a frequency-resolved optical gating method with a ZnO nanowire coupled to tapered optical microfibers, the phase and amplitude of a pulse series are extracted. The generated signals from the transverse frequency conversion process can be spatially distinguished from the input, so the signal-to-noise ratio is improved and permits lower energy pulses to be identified. Besides, since the nanometer scale of the nonlinear medium provides relaxed phase-matching constraints, a measurement of 300-nm-wide supercontinuum pulses is achieved. This system is highly compatible with standard optical fiber systems, and shows a great potential for applications such as on-chip optical communication. PMID:27609521

  18. Single-phase aqueous approach toward Pd sub-10 nm nanocubes and Pd-Pt heterostructured ultrathin nanowires.

    PubMed

    Yuan, Qiang; Zhuang, Jing; Wang, Xun

    2009-11-21

    Monodisperse, highly-selective sub-10 nm Pd and Rh nanocubes have been successfully synthesized and, for the first time, bimetallic Pd-Pt heterostructured ultrathin nanowires have been achieved through using Pd nanocubes as seeds by a one-pot, single-phase aqueous method.

  19. Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires

    NASA Astrophysics Data System (ADS)

    Liang, J.; Wang, J.; Paul, A.; Cooley, B. J.; Rench, D. W.; Dellas, N. S.; Mohney, S. E.; Engel-Herbert, R.; Samarth, N.

    2012-04-01

    We report four probe measurements of the low field magnetoresistance (MR) in single core/shell GaAs/MnAs nanowires (NWs) synthesized by molecular beam epitaxy, demonstrating clear signatures of anisotropic magnetoresistance that track the field-dependent magnetization. A comparison with micromagnetic simulations reveals that the principal characteristics of the magnetoresistance data can be unambiguously attributed to the nanowire segments with a zinc blende GaAs core. The direct correlation between magnetoresistance, magnetization, and crystal structure provides a powerful means of characterizing individual hybrid ferromagnet/semiconductor nanostructures.

  20. Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts

    NASA Astrophysics Data System (ADS)

    Kum, Hyun; Heo, Junseok; Jahangir, Shafat; Banerjee, Animesh; Guo, Wei; Bhattacharya, Pallab

    2012-04-01

    We report the direct measurement of spin transport characteristics in a GaN spin valve, with a relatively defect-free single GaN nanowire (NW) as the channel and FeCo/MgO as the tunnel barrier spin contact. Hanle spin precession and non-local transport measurements are made in an unintentionally doped nanowire spin valves. Spin diffusion length and spin lifetime values of 260 nm and 100 ps, respectively, are derived. Appropriate control measurements have been made to verify spin injection, transport, and detection.

  1. Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon.

    PubMed

    Holm, Jeppe V; Jørgensen, Henrik I; Krogstrup, Peter; Nygård, Jesper; Liu, Huiyun; Aagesen, Martin

    2013-01-01

    Continued development of high-efficiency multi-junction solar cells requires growth of lattice-mismatched materials. Today, the need for lattice matching both restricts the bandgap combinations available for multi-junctions solar cells and prohibits monolithic integration of high-efficiency III-V materials with low-cost silicon solar cells. The use of III-V nanowires is the only known method for circumventing this lattice-matching constraint, and therefore it is necessary to develop growth of nanowires with bandgaps >1.4 eV. Here we present the first gold-free gallium arsenide phosphide nanowires grown on silicon by means of direct epitaxial growth. We demonstrate that their bandgap can be controlled during growth and fabricate core-shell nanowire solar cells. We further demonstrate that surface passivation is of crucial importance to reach high efficiencies, and present a record efficiency of 10.2% for a core-shell single-nanowire solar cell.

  2. Single-Crystalline, Metallic TiC Nanowires for Highly Robust and Wide-Temperature Electrochemical Energy Storage.

    PubMed

    Xia, Xinhui; Zhan, Jiye; Zhong, Yu; Wang, Xiuli; Tu, Jiangping; Fan, Hong Jin

    2017-02-01

    Customized electrode materials with good temperature adaptability and high-rate capability are critical to the development of wide-temperature power sources. Herein, high-quality TiC nanowires are uniformly grown on flexible carbon cloth as free-standing electric-double-layer supercapacitor electrode. The TiC nanowires, 20-40 nm wide and 3-6 µm long, are single-crystalline and highly conductive that is close to typical metal. Symmetric supercapacitors are constructed with ionic liquid electrolyte and TiC nanowires electrodes as wide-temperature and long-cycle stable power source. Ultrastable high-rate cycling life of TiC nanowire arrays electrodes is demonstrated with capacitance retention of 96.8% at 60 °C (≈440 F g(-1) ), 99% at 25 °C (≈400 F g(-1) ), and 98% at -25 °C (≈240 F g(-1) ) after 50 000 cycles at 10 A g(-1) . Moreover, due to high electrical conductivity, the TiC nanowire arrays show ultrafast energy release with a fast response time constant of ≈0.7 ms. The results demonstrate the viability of metal carbide nanostructures as wide-temperature, robust electrode materials for high-rate and ultrastable supercapacitors.

  3. Synthesis, Structural Characterization, and Electronic Structure of Single-Crystalline CuxV2O5 Nanowires

    SciTech Connect

    Patridge, C.; Jaye, C; Zhang, H; Marschilok, A; Fischer, D; Takeuchi, E; Banerjee, S

    2009-01-01

    Single-crystalline copper vanadium oxide nanowires ??-CuxV2O5 (x 0.60) have been synthesized by the hydrothermal reduction of bulk CuV2O6 using small-molecule aliphatic alcohols as reducing agents. The prepared copper vanadium bronze nanowires are metallic in nature and exhibit aspect ratios as high as 300. The recent discovery of superconductivity and charge disproportionation in bulk ??-CuxV2O5 has led to renewed interest in these one-dimensional metallic systems. Scaling these systems to nanoscale dimensions offers the potential for further tunability of electronic transport and Li-ion intercalation kinetics. A combination of spectroscopic and electrical measurement methods has been used to provide evidence for the metallic nature and the presence of room-temperature charge disproportionation in these nanowires.

  4. Single nanowire electrode electrochemistry of silicon anode by in situ atomic force microscopy: solid electrolyte interphase growth and mechanical properties.

    PubMed

    Liu, Xing-Rui; Deng, Xin; Liu, Ran-Ran; Yan, Hui-Juan; Guo, Yu-Guo; Wang, Dong; Wan, Li-Jun

    2014-11-26

    Silicon nanowires (SiNWs) have attracted great attention as promising anode materials for lithium ion batteries (LIBs) on account of their high capacity and improved cyclability compared with bulk silicon. The interface behavior, especially the solid electrolyte interphase (SEI), plays a significant role in the performance and stability of the electrodes. We report herein an in situ single nanowire atomic force microscopy (AFM) method to investigate the interface electrochemistry of silicon nanowire (SiNW) electrode. The morphology and Young's modulus of the individual SiNW anode surface during the SEI growth were quantitatively tracked. Three distinct stages of the SEI formation on the SiNW anode were observed. On the basis of the potential-dependent morphology and Young's modulus evolution of SEI, a mixture-packing structural model was proposed for the SEI film on SiNW anode.

  5. Ultrafast carrier capture and Auger recombination in single GaN/InGaN multiple quantum well nanowires

    DOE PAGES

    Boubanga-Tombet, Stephane; Wright, Jeremy B.; Lu, Ping; ...

    2016-11-04

    Ultrafast optical microscopy is an important tool for examining fundamental phenomena in semiconductor nanowires with high temporal and spatial resolution. In this paper, we used this technique to study carrier dynamics in single GaN/InGaN core–shell nonpolar multiple quantum well nanowires. We find that intraband carrier–carrier scattering is the main channel governing carrier capture, while subsequent carrier relaxation is dominated by three-carrier Auger recombination at higher densities and bimolecular recombination at lower densities. Finally, the Auger constants in these nanowires are approximately 2 orders of magnitude lower than in planar InGaN multiple quantum wells, highlighting their potential for future light-emitting devices.

  6. CdS/CdSe cosensitized oriented single-crystalline TiO2 nanowire array for solar cell application

    NASA Astrophysics Data System (ADS)

    Li, Ming; Liu, Yong; Wang, Hai; Shen, Hui; Zhao, Wenxia; Huang, Hong; Liang, Chaolun

    2010-11-01

    Vertically oriented single-crystalline TiO2 nanowires array was grown on transparent conductive oxide glass substrate, and then CdS and CdSe quantum dots (QDs) were deposited on nanowires to form a TiO2/CdS/CdSe core-shell structure films. The optical properties of films with different layers of QDs were compared. The QD sensitized solar cells (QD-SSCs) were assembled and the effect of coating cycles of QDs on the photovoltaic performance was investigated. Under optimum parameters, QD-SSCs assembled with 5 μm thick TiO2 nanowires film exhibited a short-circuit current density of 7.92 mA cm-2, an open-circuit voltage of 0.40 V, and a power conversion efficiency of 1.14%.

  7. Ultrafast carrier capture and Auger recombination in single GaN/InGaN multiple quantum well nanowires

    SciTech Connect

    Boubanga-Tombet, Stephane; Wright, Jeremy B.; Lu, Ping; Williams, Michael R. C.; Li, Changyi; Wang, George T.; Prasankumar, Rohit P.

    2016-11-04

    Ultrafast optical microscopy is an important tool for examining fundamental phenomena in semiconductor nanowires with high temporal and spatial resolution. In this paper, we used this technique to study carrier dynamics in single GaN/InGaN core–shell nonpolar multiple quantum well nanowires. We find that intraband carrier–carrier scattering is the main channel governing carrier capture, while subsequent carrier relaxation is dominated by three-carrier Auger recombination at higher densities and bimolecular recombination at lower densities. Finally, the Auger constants in these nanowires are approximately 2 orders of magnitude lower than in planar InGaN multiple quantum wells, highlighting their potential for future light-emitting devices.

  8. Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser

    NASA Astrophysics Data System (ADS)

    Yan, Xin; Wei, Wei; Tang, Fengling; Wang, Xi; Li, Luying; Zhang, Xia; Ren, Xiaomin

    2017-02-01

    Near-infrared nanowire lasers are promising as ultrasmall, low-consumption light emitters in on-chip optical communications and computing systems. Here, we report on a room-temperature near-infrared nanolaser based on an AlGaAs/GaAs nanowire/single-quantum-well heterostructure grown by Au-catalyzed metal organic chemical vapor deposition. When subjects to pulsed optical excitation, the nanowire exhibits lasing, with a low threshold of 600 W/cm2, a narrow linewidth of 0.39 nm, and a high Q factor of 2000 at low temperature. Lasing is observed up to 300 K, with an ultrasmall temperature dependent wavelength shift of 0.045 nm/K. This work paves the way towards ultrasmall, low-consumption, and high-temperature-stability near-infrared nanolasers.

  9. Fabrication of a wafer-scale uniform array of single-crystal organic nanowire complementary inverters by nanotransfer printing

    NASA Astrophysics Data System (ADS)

    Park, Kyung Sun; Baek, Jangmi; Koo Lee, Yong-Eun; Sung, Myung Mo

    2015-02-01

    We report the fabrication and electrical characterization of a wafer-scale array of organic complementary inverters using single-crystal 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PEN) and fullerene (C60) nanowires as p- and n-channels, respectively. Two arrays of single-crystal organic nanowires were generated consecutively on desired locations of a common substrate with a desired mutual alignment by a direct printing method (liquid-bridge-mediated nanotransfer molding). Another direct printing of silver micron scale structures, as source and drain electrodes, on the substrate with the two printed nanowire arrays produced an array of complementary inverters with a bottom gate, top contact configuration. Field-effect mobilities of single-crystal TIPS-PEN and C60 nanowire field-effect transistors (FETs) in the arrays were uniform with 1.01 ± 0.14 and 0.10 ± 0.01 cm2V-1 s-1, respectively. A wafer-scale array of complementary inverters produced all by the direct printing method showed good performance with an average gain of 25 and with low variations among the inverters.

  10. Single-crystalline nanogap electrodes: enhancing the nanowire-breakdown process with a gaseous environment.

    PubMed

    Suga, Hiroshi; Sumiya, Touru; Furuta, Shigeo; Ueki, Ryuichi; Miyazawa, Yosuke; Nishijima, Takuya; Fujita, Jun-ichi; Tsukagoshi, Kazuhito; Shimizu, Tetsuo; Naitoh, Yasuhisa

    2012-10-24

    A method for fabricating single-crystalline nanogaps on Si substrates was developed. Polycrystalline Pt nanowires on Si substrates were broken down by current flow under various gaseous environments. The crystal structure of the nanogap electrode was evaluated using scanning electron microscopy and transmission electron microscopy. Nanogap electrodes sandwiched between Pt-large-crystal-grains were obtained by the breakdown of the wire in an O(2) or H(2) atmosphere. These nanogap electrodes show intense spots in the electron diffraction pattern. The diffraction pattern corresponds to Pt (111), indicating that single-crystal grains are grown by the electrical wire breakdown process in an O(2) or H(2) atmosphere. The Pt wires that have (111)-texture and coherent boundaries can be considered ideal as interconnectors for single molecular electronics. The simple method for fabrication of a single-crystalline nanogap is one of the first steps toward standard nanogap electrodes for single molecular instruments and opens the door to future research on physical phenomena in nanospaces.

  11. Optical properties of single cadmium selenide nanowires: Breaking through the limitations of ensemble measurements

    NASA Astrophysics Data System (ADS)

    Giblin, Jay P.

    In this thesis the optical properties of colloidal CdSe nanowires (NWs) are elucidated at the singe wire level. Using single molecule fluorescence microscopy we have established that dielectric contrast controls their optical response to polarized light. Specifically, single CdSe wire excitation polarization anisotropies (rhoexc) were studied as a function of NW radius, excitation wavelength, and dielectric environment. Experiments reveal that the strongest dependence of rhoexc-values is on a NW's surroundings in agreement with a classical dielectric contrast model. These results, however, only hold true for wires with radii less than the wavelength of light. In the limit of optically thick wires a transition from strong dielectric contrast influences to the onset of bulk-like behavior occurs. Namely, rhoexc-values decrease concurrently with the emergence of a sizable wavelength dependence when NW radii become comparable to the wavelength of light. As a consequence, pronounced rho exc rolloffs are observed at short wavelengths in the visible. We quantitatively explain the wavelength sensitivities by modeling the NW as an absorbing dielectric cylinder under plane wave excitation. A comparison of predicted rhoexc-values to experimental numbers shows good agreement and confirms the existence of wavelength-dependent rho exc-values in optically thick wires. In addition, absorption cross section values (sigmaabs) of single CdSe nanowires have been measured by photothermal heterodyne imaging (PHI). Specifically, PHI signals from isolated gold nanoparticles (NPs) with known absorption cross sections were compared to those of individual CdSe NWs excited at 532 nm. Based on our analysis an average CdSe NW absorption cross section value of sigmaabs = (3.17 +/- 0.44) x 10 -11 cm2/microm was determined. This agrees well with the theoretical value obtained using a classical Poynting vector field analysis (sigmaabs = 5.00 x 10-11 cm2/microm) and also with earlier ensemble

  12. Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure

    SciTech Connect

    Liu, Sheng; Li, Changyi; Figiel, Jeffrey J.; Brueck, Steven R. J.; Brener, Igal; Wang, George T.

    2015-04-27

    In this paper, we report continuous, dynamic, reversible, and widely tunable lasing from 367 to 337 nm from single GaN nanowires (NWs) by applying hydrostatic pressure up to ~7 GPa. The GaN NW lasers, with heights of 4–5 μm and diameters ~140 nm, are fabricated using a lithographically defined two-step top-down technique. The wavelength tuning is caused by an increasing Γ direct bandgap of GaN with increasing pressure and is precisely controllable to subnanometer resolution. The observed pressure coefficients of the NWs are ~40% larger compared with GaN microstructures fabricated from the same material or from reported bulk GaN values, revealing a nanoscale-related effect that significantly enhances the tuning range using this approach. Finally, this approach can be generally applied to other semiconductor NW lasers to potentially achieve full spectral coverage from the UV to IR.

  13. Formation and Stabilization of Single-Crystalline Metastable AuGe Phases in Ge Nanowires

    SciTech Connect

    Sutter, E.; Sutter, P.

    2011-07-22

    We use in situ observations by variable temperature transmission electron microscopy on AuGe alloy drops at the tips of Ge nanowires (NWs) with systematically varying composition to demonstrate the controlled formation of metastable solid phases integrated in NWs. The process, which operates in the regime of vapor-liquid-solid growth, involves a size-dependent depression of the alloy liquidus at the nanoscale that leads to extremely Ge-rich AuGe melts at low temperatures. During slow cooling, these liquid AuGe alloy drops show pronounced departures from equilibrium, i.e., a frustrated phase separation of Ge into the adjacent solid NW, and ultimately crystallize as single-crystalline segments of metastable {gamma}-AuGe. Our findings demonstrate a general avenue for synthesizing NW heterostructures containing stable and metastable solid phases, applicable to a wide range of materials of which NWs form by the vapor-liquid-solid method.

  14. Fabrication of Fe nanowires on yittrium-stabilized zirconia single crystal substrates by thermal CVD methods

    SciTech Connect

    Kawahito, A.; Yanase, T.; Endo, T.; Nagahama, T.; Shimada, T.

    2015-05-07

    Magnetic nanowires (NWs) are promising as material for use in spintronics and as the precursor of permanent magnets because they have unique properties due to their high aspect ratio. The growth of magnetic Fe whiskers was reported in the 1960s, but the diameter was not on a nanoscale level and the growth mechanism was not fully elucidated. In the present paper, we report the almost vertical growth of Fe NWs on a single crystal yttrium-stabilized zirconia (Y{sub 0.15}Zr{sub 0.85}O{sub 2}) by a thermal CVD method. The NWs show a characteristic taper part on the bottom growing from a trigonal pyramidal nucleus. The taper angle and length can be controlled by changing the growth condition in two steps, which will lead to obtaining uniformly distributed thin Fe NWs for applications.

  15. Point decoration of silicon nanowires: an approach toward single-molecule electrical detection.

    PubMed

    Wang, Jindong; Shen, Fangxia; Wang, Zhenxing; He, Gen; Qin, Jinwen; Cheng, Nongyi; Yao, Maosheng; Li, Lidong; Guo, Xuefeng

    2014-05-12

    Probing interactions of biological systems at the molecular level is of great importance to fundamental biology, diagnosis, and drug discovery. A rational bioassay design of lithographically integrating individual point scattering sites into electrical circuits is capable of realizing real-time, label-free biodetection of influenza H1N1 viruses with single-molecule sensitivity and high selectivity by using silicon nanowires as local reporters in combination with microfluidics. This nanocircuit-based architecture is complementary to more conventional optical techniques, but has the advantages of no bleaching problems and no fluorescent labeling. These advantages offer a promising platform for exploring dynamics of stochastic processes in biological systems and gaining information from genomics to proteomics to improve accurate molecular and even point-of-care clinical diagnosis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Superconducting nanowire single-photon detector on dielectric optical films for visible and near infrared wavelengths

    NASA Astrophysics Data System (ADS)

    You, Lixing; Li, Hao; Zhang, Weijun; Yang, Xiaoyan; Zhang, Lu; Chen, Sijing; Zhou, Hui; Wang, Zhen; Xie, Xiaoming

    2017-08-01

    The detection efficiency (DE) of superconducting nanowire single-photon detectors (SNSPDs) at 1550 nm has been significantly improved in the past decades as a result of evolution of the optical structure, the materials, and the fabrication process. We discuss the general optical design for a high-efficiency SNSPD based on dielectric optical films that can detect wavelengths from visible to near infrared regions. This structure shows close-to-unity absorption and good insensitivity to the fine wavelength and the incident angle. We demonstrate an SNSPD specifically fabricated for the detection of 1064 nm wavelength with a maximal system DE of 87.4% ± 3.7%. The DEs of the SNSPDs for visible and near infrared wavelengths are also summarized and compared with those of semiconducting detectors.

  17. Investigations of afterpulsing and detection efficiency recovery in superconducting nanowire single-photon detectors

    NASA Astrophysics Data System (ADS)

    Burenkov, Viacheslav; Xu, He; Qi, Bing; Hadfield, Robert H.; Lo, Hoi-Kwong

    2013-06-01

    We report on the observation of a non-uniform dark count rate in Superconducting Nanowire Single Photon Detectors (SNSPDs), specifically focusing on an afterpulsing effect present when the SNSPD is operated at a high bias current regime. The afterpulsing exists for real detection events (triggered by input photons) as well as for dark counts (no laser input). In our standard set-up, the afterpulsing is most likely to occur at around 180 ns following a detection event, for both real counts and dark counts. We characterize the afterpulsing behavior and speculate that it is not due to the SNSPD itself but rather the amplifiers used to boost the electrical output signal from the SNSPD. We show that the afterpulsing indeed disappears when we use a different amplifier with a better low frequency response. We also examine the short-lived enhancement of detection efficiency during the recovery of the SNSPD due to temporary perturbation of the bias and grounding conditions.

  18. Influence of electron–phonon interactions in single dopant nanowire transistors

    SciTech Connect

    Carrillo-Nuñez, H. Bescond, M. Cavassilas, N.; Dib, E.; Lannoo, M.

    2014-10-28

    Single dopant nanowire transistors can be viewed as the ultimate miniaturization of nano electronic devices. In this work, we theoretically investigate the influence of the electron-phonon coupling on their transport properties using a non-equilibrium Green's function approach in the self-consistent Born approximation. For an impurity located at the center of the wire we find that, at room temperature, acoustic phonons broaden the impurity level so that the bistability predicted in the ballistic regime is suppressed. Optical phonons are found to have a beneficial impact on carrier transport via a phonon-assisted tunneling effect. We discuss the position and temperature dependence of these effects, showing that such systems might be very promising for engineering of ultimate devices.

  19. Design of a polarization-insensitive superconducting nanowire single photon detector with high detection efficiency

    PubMed Central

    Zheng, Fan; Xu, Ruiying; Zhu, Guanghao; Jin, Biaobing; Kang, Lin; Xu, Weiwei; Chen, Jian; Wu, Peiheng

    2016-01-01

    Superconducting nanowire single photon detectors (SNSPDs) deliver superior performance over their competitors in the near-infrared regime. However, these detectors have an intrinsic polarization dependence on the incident wave because of their one-dimensional meander structure. In this paper, we propose an approach to eliminate the polarization sensitivity of SNSPDs by using near-field optics to increase the absorption of SNSPDs under transverse magnetic (TM) illumination. In addition, an optical cavity is added to our SNSPD to obtain nearly perfect absorption of the incident wave. Numerical simulations show that the maximum absorption of a designed SNSPD can reach 96% at 1550 nm, and indicate that the absorption difference between transverse electric (TE) and TM polarization is less than 0.5% across a wavelength window of 300 nm. Our work provides the first demonstration of the possibility of designing a polarization-insensitive and highly efficient SNSPD without performing device symmetry improvements. PMID:26948672

  20. Synchrotron nanoimaging of single In-rich InGaN nanowires

    NASA Astrophysics Data System (ADS)

    Segura-Ruiz, J.; Martínez-Criado, G.; Chu, M. H.; Denker, C.; Malindretos, J.; Rizzi, A.

    2013-04-01

    This work reports on the elemental distribution and local structure of single InxGa1-xN nanowires (NWs) grown by molecular beam epitaxy on Si (111) substrates using X-ray fluorescence nanoprobe. Ga and In maps reveal an inhomogeneous elemental distribution along the NWs, with a higher Ga concentration at the bottom of the NW. Scanning electron microscopy images show that the inhomogeneous axial distribution is not correlated with a X-ray beam induced damage, and therefore, should be an intrinsic characteristic of the NWs arising from the growth process. Spatially resolved X-ray absorption near edge structure spectroscopy data acquired around the In K-edge show that the tetrahedral structure is preserved around the absorbing In-atoms all along the NW, and suggests that the compositional modulation could be affecting its long-range order.

  1. Multiple nanowire species synthesized on a single chip by selectively addressable horizontal nanochannels.

    PubMed

    Xiang, Ying; Keilbach, Andreas; Codinachs, Lia Moreno; Nielsch, Kornelius; Abstreiter, Gerhard; Fontcuberta i Morral, Anna; Bein, Thomas

    2010-04-14

    The synthesis of horizontal porous anodic alumina (PAA) structures with individually addressable channel systems is demonstrated. This was achieved by developing a multicontact design of aluminum finger structures (two to five contacts) on silicon wafers. These aluminum contacts were electrically isolated from each other, allowing the individual anodization of each contact at different conditions. This way it is possible to synthesize different pore diameters, pore densities, and channel lengths on a single chip. Scanning electron microscopy (SEM) characterization revealed that the neighboring contacts are not significantly altered during the anodization procedure. After successful barrier-layer thinning, the individual finger structures of each contact were filled by electrodeposition and thermal chemical vapor deposition. The resulting metal (Au, Cu, Ni, Co) and semiconductor (Te, Si) nanowires embedded within the porous anodic alumina mold were characterized by SEM and energy dispersive X-ray measurements. The multicontact fabrication results open a new route toward complex nanoelectronic and sensing applications.

  2. Electrotriggered, spatioselective, quantitative gene delivery into a single cell nucleus by Au nanowire nanoinjector.

    PubMed

    Yoo, Seung Min; Kang, Mijeong; Kang, Taejoon; Kim, Dong Min; Lee, Sang Yup; Kim, Bongsoo

    2013-06-12

    Delivery of bioactive materials into a cell is highly important in the study of cell biology and medical treatments. Ideal nanoinjectors should be able to deliver biomaterials with high spatial resolution while causing minimum cell damage. We developed a Au nanowire (NW) nanoinjector that has the thinnest diameter (100–150 nm) among the DNA delivering devices as well as optimum mechanical properties, minimizing cell damage. Well-defined (111) single-crystalline Au surface and high electric conductivity of a Au NW nanoinjector allow precisely timed and efficient electrochemical release of DNA molecules attached on a Au NW surface. Both linear DNA and plasmid DNA were delivered separately and showed successful expression. The Au NW nanoinjector would find important biomedical applications in the fields such as gene therapy, DNA vaccination, targeted drug delivery, and probe/control of cell signaling events.

  3. Interface nature of oxidized single-crystal arrays of etched Si nanowires on (100)Si

    NASA Astrophysics Data System (ADS)

    Jivanescu, M.; Stesmans, A.; Kurstjens, R.; Dross, F.

    2012-02-01

    Low temperature electron spin resonance studies have been carried out on single crystalline arrays of sub-10 nm Si nanowires (NWs) manufactured on (100)Si by top down etching and oxidation thinning. This reveals the presence of a substantial inherent density of Pb0 (Si3 ≡ Si•) defects (traps) at the NW Si/SiO2 interfaces, due to particular faceting and enhanced interface strain, leaving NW interfaces of reduced electrical quality. Perusal of the specific properties of the occurring Pb-type defect system points to a nanopillar morphology compatible with NWs predominantly bordered by {110} facets, with cross sectional shape of <100> truncated {110} squares. The inherent interface quality appears limited by the wire-narrowing thermal oxidation procedure.

  4. Superconducting nanowire single-photon detectors with non-periodic dielectric multilayers

    PubMed Central

    Yamashita, Taro; Waki, Kentaro; Miki, Shigehito; Kirkwood, Robert A.; Hadfield, Robert H.; Terai, Hirotaka

    2016-01-01

    We present superconducting nanowire single-photon detectors (SSPDs) on non-periodic dielectric multilayers, which enable us to design a variety of wavelength dependences of optical absorptance by optimizing the dielectric multilayer. By adopting a robust simulation to optimize the dielectric multilayer, we designed three types of SSPDs with target wavelengths of 500 nm, 800 nm, and telecom range respectively. We fabricated SSPDs based on the optimized designs for 500 and 800 nm, and evaluated the system detection efficiency at various wavelengths. The results obtained confirm that the designed SSPDs with non-periodic dielectric multilayers worked well. This versatile device structure can be effective for multidisciplinary applications in fields such as the life sciences and remote sensing that require high efficiency over a precise spectral range and strong signal rejection at other wavelengths. PMID:27775712

  5. Superconducting nanowire single-photon detectors with non-periodic dielectric multilayers

    NASA Astrophysics Data System (ADS)

    Yamashita, Taro; Waki, Kentaro; Miki, Shigehito; Kirkwood, Robert A.; Hadfield, Robert H.; Terai, Hirotaka

    2016-10-01

    We present superconducting nanowire single-photon detectors (SSPDs) on non-periodic dielectric multilayers, which enable us to design a variety of wavelength dependences of optical absorptance by optimizing the dielectric multilayer. By adopting a robust simulation to optimize the dielectric multilayer, we designed three types of SSPDs with target wavelengths of 500 nm, 800 nm, and telecom range respectively. We fabricated SSPDs based on the optimized designs for 500 and 800 nm, and evaluated the system detection efficiency at various wavelengths. The results obtained confirm that the designed SSPDs with non-periodic dielectric multilayers worked well. This versatile device structure can be effective for multidisciplinary applications in fields such as the life sciences and remote sensing that require high efficiency over a precise spectral range and strong signal rejection at other wavelengths.

  6. Plasmon assisted enhanced second-harmonic generation in single hybrid Au/ZnS nanowires

    NASA Astrophysics Data System (ADS)

    Jassim, Nadia M.; Wang, Kai; Han, Xiaobo; Long, Hua; Wang, Bing; Lu, Peixiang

    2017-02-01

    We demonstrate the enhanced second-harmonic generation (SHG) in single ZnS nanowires (NWs) attached with gold nanoparticles (Au NPs). The hybrid Au/ZnS NWs with different densities of the attached Au NPs were prepared by a simple solution impregnation method. By comparing with bare ZnS NWs, ∼1.3, ∼6.6, ∼7 and ∼2 times enhancement of SH intensity was achieved in the hybrid Au/ZnS NWs with low, moderate, high and ultrahigh densities of the attached Au NPs, respectively. The enhanced SHG in the hybrid Au/ZnS NWs is attributed to the strong local-fields from the Au cluster under the near-resonant condition, which is supported by the related dark-field scattering spectra. This hybrid Au/ZnS NWs provide a simple platform for enhancing nonlinear optical responses, which have potential applications in nano-probing and nano-sensing.

  7. An ultra-fast superconducting Nb nanowire single-photon detector for soft x-rays

    SciTech Connect

    Inderbitzin, K.; Engel, A.; Schilling, A.; Il'in, K.; Siegel, M.

    2012-10-15

    Although superconducting nanowire single-photon detectors (SNSPDs) are well studied regarding the detection of infrared/optical photons and keV-molecules, no studies on continuous x-ray photon counting by thick-film detectors have been reported so far. We fabricated a 100 nm thick niobium x-ray SNSPD (an X-SNSPD) and studied its detection capability of photons with keV-energies in continuous mode. The detector is capable to detect photons even at reduced bias currents of 0.4%, which is in sharp contrast to optical thin-film SNSPDs. No dark counts were recorded in extended measurement periods. Strikingly, the signal amplitude distribution depends significantly on the photon energy spectrum.

  8. Fabrication of Fe nanowires on yittrium-stabilized zirconia single crystal substrates by thermal CVD methods

    NASA Astrophysics Data System (ADS)

    Kawahito, A.; Yanase, T.; Endo, T.; Nagahama, T.; Shimada, T.

    2015-05-01

    Magnetic nanowires (NWs) are promising as material for use in spintronics and as the precursor of permanent magnets because they have unique properties due to their high aspect ratio. The growth of magnetic Fe whiskers was reported in the 1960s, but the diameter was not on a nanoscale level and the growth mechanism was not fully elucidated. In the present paper, we report the almost vertical growth of Fe NWs on a single crystal yttrium-stabilized zirconia (Y0.15Zr0.85O2) by a thermal CVD method. The NWs show a characteristic taper part on the bottom growing from a trigonal pyramidal nucleus. The taper angle and length can be controlled by changing the growth condition in two steps, which will lead to obtaining uniformly distributed thin Fe NWs for applications.

  9. Mapping carrier diffusion in single silicon core-shell nanowires with ultrafast optical microscopy.

    PubMed

    Seo, M A; Yoo, J; Dayeh, S A; Picraux, S T; Taylor, A J; Prasankumar, R P

    2012-12-12

    Recent success in the fabrication of axial and radial core-shell heterostructures, composed of one or more layers with different properties, on semiconductor nanowires (NWs) has enabled greater control of NW-based device operation for various applications. (1-3) However, further progress toward significant performance enhancements in a given application is hindered by the limited knowledge of carrier dynamics in these structures. In particular, the strong influence of interfaces between different layers in NWs on transport makes it especially important to understand carrier dynamics in these quasi-one-dimensional systems. Here, we use ultrafast optical microscopy (4) to directly examine carrier relaxation and diffusion in single silicon core-only and Si/SiO(2) core-shell NWs with high temporal and spatial resolution in a noncontact manner. This enables us to reveal strong coherent phonon oscillations and experimentally map electron and hole diffusion currents in individual semiconductor NWs for the first time.

  10. Plasma enhanced multistate storage capability of single ZnO nanowire based memory

    SciTech Connect

    Lai, Yunfeng Xin, Pucong; Cheng, Shuying; Yu, Jinling; Zheng, Qiao

    2015-01-19

    Multiple-state storage (MSS) is common for resistive random access memory, but the effects of plasma treatment on the MSS and the switching properties have been scarcely investigated. We have demonstrated a stable four-state storage capability of single zinc oxide nanowire (ZnO NW) treated by argon plasma. The electrical switching is attributed to the electron trapping and detrapping from the oxygen vacancies (V{sub o}s). The MSS relates to the electrical-thermal induced distribution of the V{sub o}s which determines electron transport behavior to show different resistance states. Additionally, programming (set and reset) voltages decrease with plasma treatment due to the thickness modulation of the interface barrier.

  11. Limiting efficiency calculation of silicon single-nanowire solar cells with considering Auger recombination

    SciTech Connect

    Zhai, Xiongfei; Wu, Shaolong; Shang, Aixue; Li, Xiaofeng

    2015-02-09

    Single-nanowire solar cells (SNSCs) have attracted considerable attention due to their unique light-harvesting capability mediated by the optical antenna effect and the high photoconversion efficiency due to the orthogonalization of the carrier collection to the photon incidence. We present a detailed prediction of the light-conversion efficiency of Si SNSCs based on finite-element simulation and thermodynamic balance analysis, with especially focusing on the comparison between SNSCs and film systems. Carrier losses due to radiative and Auger recombinations are introduced in the analysis of the limiting efficiency, which show that the Auger recombination plays a key role in accurately predicting the efficiency of Si SNSCs, otherwise, the device performance would be strongly overestimated. The study paves a more realistic way to evaluate the nanostructured solar cells based on indirect-band photoactive materials.

  12. Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure.

    PubMed

    Liu, Sheng; Li, Changyi; Figiel, Jeffrey J; Brueck, Steven R J; Brener, Igal; Wang, George T

    2015-06-07

    We report continuous, dynamic, reversible, and widely tunable lasing from 367 to 337 nm from single GaN nanowires (NWs) by applying hydrostatic pressure up to ∼7 GPa. The GaN NW lasers, with heights of 4-5 μm and diameters ∼140 nm, are fabricated using a lithographically defined two-step top-down technique. The wavelength tuning is caused by an increasing Γ direct bandgap of GaN with increasing pressure and is precisely controllable to subnanometer resolution. The observed pressure coefficients of the NWs are ∼40% larger compared with GaN microstructures fabricated from the same material or from reported bulk GaN values, revealing a nanoscale-related effect that significantly enhances the tuning range using this approach. This approach can be generally applied to other semiconductor NW lasers to potentially achieve full spectral coverage from the UV to IR.

  13. Vertical Single-Crystalline Organic Nanowires on Graphene: Solution-Phase Epitaxy and Optical Microcavities.

    PubMed

    Zheng, Jian-Yao; Xu, Hongjun; Wang, Jing Jing; Winters, Sinéad; Motta, Carlo; Karademir, Ertuğrul; Zhu, Weigang; Varrla, Eswaraiah; Duesberg, Georg S; Sanvito, Stefano; Hu, Wenping; Donegan, John F

    2016-08-10

    Vertically aligned nanowires (NWs) of single crystal semiconductors have attracted a great deal of interest in the past few years. They have strong potential to be used in device structures with high density and with intriguing optoelectronic properties. However, fabricating such nanowire structures using organic semiconducting materials remains technically challenging. Here we report a simple procedure for the synthesis of crystalline 9,10-bis(phenylethynyl) anthracene (BPEA) NWs on a graphene surface utilizing a solution-phase van der Waals (vdW) epitaxial strategy. The wires are found to grow preferentially in a vertical direction on the surface of graphene. Structural characterization and first-principles ab initio simulations were performed to investigate the epitaxial growth and the molecular orientation of the BPEA molecules on graphene was studied, revealing the role of interactions at the graphene-BPEA interface in determining the molecular orientation. These free-standing NWs showed not only efficient optical waveguiding with low loss along the NW but also confinement of light between the two end facets of the NW forming a microcavity Fabry-Pérot resonator. From an analysis of the optical dispersion within such NW microcavities, we observed strong slowing of the waveguided light with a group velocity reduced to one-tenth the speed of light. Applications of the vertical single-crystalline organic NWs grown on graphene will benefit from a combination of the unique electronic properties and flexibility of graphene and the tunable optical and electronic properties of organic NWs. Therefore, these vertical organic NW arrays on graphene offer the potential for realizing future on-chip light sources.

  14. Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

    SciTech Connect

    Pud, S.; Li, J.; Offenhäusser, A.; Vitusevich, S. A.; Gasparyan, F.; Petrychuk, M.

    2014-06-21

    Liquid-gated silicon nanowire (NW) field effect transistors (FETs) are fabricated and their transport and dynamic properties are investigated experimentally and theoretically. Random telegraph signal (RTS) fluctuations were registered in the nanolength channel FETs and used for the experimental and theoretical analysis of transport properties. The drain current and the carrier interaction processes with a single trap are analyzed using a quantum-mechanical evaluation of carrier distribution in the channel and also a classical evaluation. Both approaches are applied to treat the experimental data and to define an appropriate solution for describing the drain current behavior influenced by single trap resulting in RTS fluctuations in the Si NW FETs. It is shown that quantization and tunneling effects explain the behavior of the electron capture time on the single trap. Based on the experimental data, parameters of the single trap were determined. The trap is located at a distance of about 2 nm from the interface Si/SiO{sub 2} and has a repulsive character. The theory of dynamic processes in liquid-gated Si NW FET put forward here is in good agreement with experimental observations of transport in the structures and highlights the importance of quantization in carrier distribution for analyzing dynamic processes in the nanostructures.

  15. Elucidating the localized plasmonic enhancement effects from a single Ag nanowire in organic solar cells.

    PubMed

    Liu, Xinfeng; Wu, Bo; Zhang, Qing; Yip, Jing Ngei; Yu, Guannan; Xiong, Qihua; Mathews, Nripan; Sum, Tze Chien

    2014-10-28

    The origins of performance enhancement in hybrid plasmonic organic photovoltaic devices are often embroiled in a complex interaction of light scattering, localized surface plasmon resonances, exciton-plasmon energy transfer and even nonplasmonic effects. To clearly deconvolve the plasmonic contributions from a single nanostructure, we herein investigate the influence of a single silver nanowire (NW) on the charge carriers in bulk heterojunction polymer solar cells using spatially resolved optical spectroscopy, and correlate to electrical device characterization. Polarization-dependent photocurrent enhancements with a maximum of ∼ 36% over the reference are observed when the transverse mode of the plasmonic excitations in the Ag NW is activated. The ensuing higher absorbance and light scattering induced by the electronic motion perpendicular to the NW long axis lead to increased exciton and polaron densities instead of direct surface plasmon-exciton energy transfer. Finite-difference time-domain simulations also validate these findings. Importantly, our study at the single nanostructure level explores the fundamental limits of plasmonic enhancement achievable in organic solar cells with a single plasmonic nanostructure.

  16. Simultaneous integration of different nanowires on single textured Si (100) substrates.

    PubMed

    Rieger, Torsten; Rosenbach, Daniel; Mussler, Gregor; Schäpers, Thomas; Grützmacher, Detlev; Lepsa, Mihail Ion

    2015-03-11

    By applying a texturing process to silicon substrates, we demonstrate the possibility to integrate III-V nanowires on (100) oriented silicon substrates. Nanowires are found to grow perpendicular to the {111}-oriented facets of pyramids formed by KOH etching. Having control of the substrate orientation relative to the incoming fluxes enables not only the growth of nanowires on selected facets of the pyramids but also studying the influence of the fluxes on the nanowire nucleation and growth. Making use of these findings, we show that nanowires with different dimensions can be grown on the same sample and, additionally, it is even possible to integrate nanowires of different semiconductor materials, for example, GaAs and InAs, on the very same sample.

  17. Localized Synthesis of Iron Oxide Nanowires and Fabrication of High Performance Nanosensors Based on a Single Fe2 O3 Nanowire.

    PubMed

    Lupan, O; Postica, V; Wolff, N; Polonskyi, O; Duppel, V; Kaidas, V; Lazari, E; Ababii, N; Faupel, F; Kienle, L; Adelung, R

    2017-02-10

    A composed morphology of iron oxide microstructures covered with very thin nanowires (NWs) with diameter of 15-50 nm has been presented. By oxidizing metallic Fe microparticles at 255 °C for 12 and 24 h, dense iron oxide NW networks bridging prepatterned Au/Cr pads are obtained. X-ray photoelectron spectroscopy studies reveal formation of α-Fe2 O3 and Fe3 O4 on the surface and it is confirmed by detailed high-resolution transmission electron microscopy and selected area electron diffraction (SAED) investigations that NWs are single phase α-Fe2 O3 and some domains of single phase Fe3 O4 . Localized synthesis of such nano- and microparticles directly on sensor platform/structure at 255 °C for 24 h and reoxidation at 650 °C for 0.2-2 h, yield in highly performance and reliable detection of acetone vapor with fast response and recovery times. First nanosensors on a single α-Fe2 O3 nanowire are fabricated and studied showing excellent performances and an increase in acetone response by decrease of their diameter was developed. The facile technological approach enables this nanomaterial as candidate for a range of applications in the field of nanoelectronics such as nanosensors and biomedicine devices, especially for breath analysis in the treatment of diabetes patients.

  18. Direct Fabrication of Functional Ultrathin Single-Crystal Nanowires from Quasi-One-Dimensional van der Waals Crystals.

    PubMed

    Liu, Xue; Liu, Jinyu; Antipina, Liubov Yu; Hu, Jin; Yue, Chunlei; Sanchez, Ana M; Sorokin, Pavel B; Mao, Zhiqiang; Wei, Jiang

    2016-10-12

    Micromechanical exfoliation of two-dimensional (2D) van der Waals materials has triggered an explosive interest in 2D material research. The extension of this idea to 1D van der Waals materials, possibly opening a new arena for 1D material research, has not yet been realized. In this paper, we demonstrate that 1D nanowire with sizes as small as six molecular ribbons, can be readily achieved in the Ta2(Pd or Pt)3Se8 system by simple micromechanical exfoliation. Exfoliated Ta2Pd3Se8 nanowires are n-type semiconductors, whereas isostructural Ta2Pt3Se8 nanowires are p-type semiconductors. Both types of nanowires show excellent electrical switching performance as the channel material for a field-effect transistor. Low-temperature transport measurement reveals a defect level inherent to Ta2Pd3Se8 nanowires, which enables the observed electrical switching behavior at high temperature (above 140 K). A functional logic gate consisting of both n-type Ta2Pd3Se8 and p-type Ta2Pt3Se8 field-effect transistors has also been successfully achieved. By taking advantage of the high crystal quality derived from the parent van der Waals bulk compound, our findings about the exfoliated Ta2(Pd or Pt)3Se8 nanowires demonstrate a new pathway to access single-crystal 1D nanostructures for the study of their fundamental properties and the exploration of their applications in electronics, optoelectronics, and energy harvesting.

  19. Fast, sensitive hydrogen gas detection using single palladium nanowires that resist fracture.

    PubMed

    Yang, Fan; Taggart, David K; Penner, Reginald M

    2009-05-01

    Two types of pure palladium (Pd) nanowires, differentiated by microstructure, were electrodeposited: (1) nanocrystalline Pd nanowires (grain diameter approximately 5 nm, henceforth nc5-Pd) and (2) nanocrystalline Pd nanowires with a grain diameter of 15 nm (nc15-Pd). These nanowires were evaluated for the detection of hydrogen gas (H(2)). Despite their fundamental similarities, the behavior of these nanowires upon exposure to H(2) was dramatically and reproducibly different: nc5-Pd nanowires spontaneously fractured upon exposure to H(2) above 1-2%. Fractured nanowires continued to function as sensors for H(2) concentrations above 2%, actuated by the volume change associated with the alpha to beta phase transition of PdH(x). nc15-Pd nanowires, in contrast, withstood repeated exposures to H(2) up to 10% without fracturing. nc15-Pd nanowires showed a rapid (2 s at 10%) increase in resistance in the presence of H(2) and a response that scaled smoothly with [H(2)] spanning 5 orders of magnitude down to 2 ppm.

  20. Low-frequency flicker noise in a MSM device made with single Si nanowire (diameter ≈ 50 nm)

    NASA Astrophysics Data System (ADS)

    Samanta, Sudeshna; Das, Kaustuv; Raychaudhuri, Arup Kumar

    2013-04-01

    Low-frequency flicker noise has been measured in a metal-semiconductor-metal (MSM) device made from a single strand of a single crystalline Si nanowire (diameter approximately 50 nm). Measurement was done with an alternating current (ac) excitation for the noise measurement superimposed with direct current (dc) bias that can be controlled independently. The observed noise has a spectral power density ∝1/ f α . Application of the superimposed dc bias (retaining the ac bias unchanged) with a value more than the Schottky barrier height at the junction leads to a large suppression of the noise amplitude along with a change of α from 2 to ≈ 1. The dc bias-dependent part of the noise has been interpreted as arising from the interface region. The residual dc bias-independent flicker noise is suggested to arise from the single strand of Si nanowire, which has the conventional 1/ f spectral power density.

  1. Composition-graded nanowire solar cells fabricated in a single process for spectrum-splitting photovoltaic systems.

    PubMed

    Caselli, Derek; Liu, Zhicheng; Shelhammer, David; Ning, Cun-Zheng

    2014-10-08

    Nanomaterials such as semiconductor nanowires have unique features that could enable novel optoelectronic applications such as novel solar cells. This paper aims to demonstrate one such recently proposed concept: Monolithically Integrated Laterally Arrayed Multiple Band gap (MILAMB) solar cells for spectrum-splitting photovoltaic systems. Two cells with different band gaps were fabricated simultaneously in the same process on a single substrate using spatially composition-graded CdSSe alloy nanowires grown by the Dual-Gradient Method in a chemical vapor deposition system. CdSSe nanowire ensemble devices tested under 1 sun AM1.5G illumination achieved open-circuit voltages up to 307 and 173 mV and short-circuit current densities as high as 0.091 and 0.974 mA/cm(2) for the CdS- and CdSe-rich cells, respectively. The open-circuit voltages were roughly three times those of similar CdSSe film cells fabricated for comparison due to the superior optical quality of the nanowires. I-V measurements were also performed using optical filters to simulate spectrum-splitting. The open-circuit voltages and fill factors of the CdS-rich subcells were uniformly larger than the corresponding CdSe-rich cells for similar photon flux, as expected. This suggests that if all wires can be contacted, the wide-gap cell is expected to have greater output power than the narrow-gap cell, which is the key to achieving high efficiencies with spectrum-splitting. This paper thus provides the first proof-of-concept demonstration of simultaneous fabrication of MILAMB solar cells. This approach to solar cell fabrication using single-crystal nanowires for spectrum-splitting photovoltaics could provide a future low-cost high-efficiency alternative to the conventional high-cost high-efficiency tandem cells.

  2. Compressive holographic imaging based on single in-line hologram and superconducting nanowire single-photon detector

    NASA Astrophysics Data System (ADS)

    Li, Jun; Pan, Yangyang; Li, Jiaosheng; Li, Rong; Yang, Zhibin; Xu, Kunyuan; Tang, Zhilie; Zhong, Ting

    2015-11-01

    A novel compressive holographic 3D imaging method based on single in-line hologram and superconducting nanowire single-photon detector (SNSPD) is proposed. It utilizes the Mach-Zehnder interferometer to form just one-only in-line 3D hologram on CCD plane, and then apply compressive sensing (CS) approach to perform the 3D hologram acquisition process with a digital micro-mirror device array (DMD) placed in the CCD plane and a SNSPD. Once the 3D object measurements sensed by a SNSPD is got via compressive sampling with DMD in the pure optical domain, original 3D object can be reconstructed numerically via certain signal recovery algorithms of CS and digital holography. Computer simulations demonstrated the feasibility and the efficiency of the method. This method is supposed to break through the limitation of array imaging based on the superconductor diode and large measurements in compressive holographic imaging based on the multi-step phase-shifting digital holography.

  3. X-ray Bragg Ptychography on a Single InGaN/GaN Core-Shell Nanowire.

    PubMed

    Dzhigaev, Dmitry; Stankevič, Tomaš; Bi, Zhaoxia; Lazarev, Sergey; Rose, Max; Shabalin, Anatoly; Reinhardt, Juliane; Mikkelsen, Anders; Samuelson, Lars; Falkenberg, Gerald; Feidenhans'l, Robert; Vartanyants, Ivan A

    2017-03-20

    The future of solid-state lighting can be potentially driven by applications of InGaN/GaN core-shell nanowires. These heterostructures provide the possibility for fine-tuning of functional properties by controlling a strain state between mismatched layers. We present a nondestructive study of a single 400 nm-thick InGaN/GaN core-shell nanowire using two-dimensional (2D) X-ray Bragg ptychography (XBP) with a nanofocused X-ray beam. The XBP reconstruction enabled the determination of a detailed three-dimensional (3D) distribution of the strain in the particular nanowire using a model based on finite element method. We observed the strain induced by the lattice mismatch between the GaN core and InGaN shell to be in the range from -0.1% to 0.15% for an In concentration of 30%. The maximum value of the strain component normal to the facets was concentrated at the transition region between the main part of the nanowire and the GaN tip. In addition, a variation in misfit strain relaxation between the axial growth and in-plane directions was revealed.

  4. Large optical Stark shifts in single quantum dots coupled to core-shell GaAs/AlGaAs nanowires.

    PubMed

    Yu, Ying; Wei, Yu-Ming; Wang, Jing; Li, Jia-Hua; Shang, Xiang-Jun; Ni, Hai-Qiao; Niu, Zhi-Chuan; Wang, Xue-Hua; Yu, Si-Yuan

    2017-04-12

    Nanowire quantum dots (NW-QDs) can be used for future compact and efficient optoelectronic devices. Many efforts have been made to control the QD states by inserting the QDs in doped structures and applying an electric field in a nanowire system. In this paper, we use down-conversion and up-conversion photoluminescence excitations to explore the optical and electronic properties of single quantum dots in GaAs/AlGaAs core-shell nanowires. We investigate a large optical Stark shift in this system as a new method to tune the QD states. When the tunable laser lies within the spectral bandwidth of ZB/WZ GaAs (780 nm-860 nm), we observe an extremely large optical Stark shift of 1.3 nm (0.5 nm) with increasing excitation power at a resonant wavelength of 800 nm (840 nm) in GaAs states. The ability to in situ control the energy states of self-catalyzed NW-QDs should open a new way for quantum light sources and nonlinear optics in a nanowire system.

  5. Spatiotemporal Imaging of the Acoustic Field Emitted by a Single Copper Nanowire.

    PubMed

    Jean, Cyril; Belliard, Laurent; Cornelius, Thomas W; Thomas, Olivier; Pennec, Yan; Cassinelli, Marco; Toimil-Molares, Maria Eugenia; Perrin, Bernard

    2016-10-12

    The monochromatic and geometrically anisotropic acoustic field generated by 400 and 120 nm diameter copper nanowires simply dropped on a 10 μm silicon membrane is investigated in transmission using three-dimensional time-resolved femtosecond pump-probe experiments. Two pump-probe time-resolved experiments are carried out at the same time on both sides of the silicon substrate. In reflection, the first radial breathing mode of the nanowire is excited and detected. In transmission, the longitudinal and shear waves are observed. The longitudinal signal is followed by a monochromatic component associated with the relaxation of the nanowire's first radial breathing mode. Finite difference time domain (FDTD) simulations are performed and accurately reproduce the diffracted field. A shape anisotropy resulting from the large aspect ratio of the nanowire is detected in the acoustic field. The orientation of the underlying nanowires is thus acoustically deduced.

  6. Single-crystal CdSe nanowires prepared via vapor-phase growth assisted with silicon.

    PubMed

    Wang, Z Y; Zhang, L D; Ye, C H; Fang, X S; Xiao, Z D; Kong, M G

    2005-12-01

    Hexagonal cadmium selenide (CdSe) nanowires, with diameter around 20 nm, were synthesized using a simple vapor-phase growth. Silicon (Si) powder acts as a source material assisting the synthesis, which is very important to the formation of the CdSe nanowires. We also suggest that self-catalysis at the Cd-terminated (0001) surface, together with the assistance action of Si, leads to the formation of wire-like structures to be formed. Meanwhile, the assistance of Si is responsible for the fineness and uniformity of the CdSe nanowires. The possible growth mechanism of the CdSe nanowires is proposed, and the optical property of the as-grown CdSe nanowires is characterized.

  7. Pulsed laser deposition of single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 core/shell nanowires.

    PubMed

    Zhao, Yu; Li, Hui; Zhu, Yan-Yan; Guan, Lei-Lei; Li, Yan-Li; Sun, Jian; Ying, Zhi-Feng; Wu, Jia-Da; Xu, Ning

    2014-01-01

    Single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 (CI/CIGS) core/shell nanowires are fabricated by pulsed laser deposition with Ni nanoparticles as catalyst. The CI/CIGS core/shell nanowires are made up of single-crystalline CI cores surrounded by single-crystalline CIGS shells. The CI/CIGS nanowires are grown at a considerably low temperature (350°C ~ 450°C) by vapor-liquid-solid mode combined with vapor-solid mode. The distribution density of the nanowires increases with the increasing of the deposition duration, and the substrate temperature determines the lengths of the nanowires. The U-V absorption spectra of the CIGS thin films with and without the CI/CIGS core/shell nanowires demonstrate that the CI/CIGS nanowires can remarkably enhance the absorption of CIGS thin films in the spectrum range of 300 to 900 nm. 61.46. + w; 61.41.e; 81.15.Fg; 81.07.b.

  8. Pulsed laser deposition of single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 core/shell nanowires

    PubMed Central

    2014-01-01

    Single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 (CI/CIGS) core/shell nanowires are fabricated by pulsed laser deposition with Ni nanoparticles as catalyst. The CI/CIGS core/shell nanowires are made up of single-crystalline CI cores surrounded by single-crystalline CIGS shells. The CI/CIGS nanowires are grown at a considerably low temperature (350°C ~ 450°C) by vapor-liquid-solid mode combined with vapor-solid mode. The distribution density of the nanowires increases with the increasing of the deposition duration, and the substrate temperature determines the lengths of the nanowires. The U-V absorption spectra of the CIGS thin films with and without the CI/CIGS core/shell nanowires demonstrate that the CI/CIGS nanowires can remarkably enhance the absorption of CIGS thin films in the spectrum range of 300 to 900 nm. PACS 61.46. + w; 61.41.e; 81.15.Fg; 81.07.b PMID:25520597

  9. Quantum Yield of Single Surface Plasmons Generated by a Quantum Dot Coupled with a Silver Nanowire.

    PubMed

    Li, Qiang; Wei, Hong; Xu, Hongxing

    2015-12-09

    The interactions between surface plasmons (SPs) in metal nanostructures and excitons in quantum emitters (QEs) lead to many interesting phenomena and potential applications that are strongly dependent on the quantum yield of SPs. The difficulty in distinguishing all the possible exciton recombination channels hinders the experimental determination of SP quantum yield. Here, we experimentally measured for the first time the quantum yield of single SPs generated by the exciton-plasmon coupling in a system composed of a single quantum dot and a silver nanowire (NW). By utilizing the SP guiding property of the NW, the decay rates of all the exciton recombination channels, i.e., direct free space radiation channel, SP generation channel, and nonradiative damping channel, are quantitatively obtained. It is determined that the optimum emitter-NW coupling distance for the largest SP quantum yield is about 10 nm, resulting from the different distance-dependent decay rates of the three channels. These results are important for manipulating the coupling between plasmonic nanostructures and QEs and developing on-chip quantum plasmonic devices for potential nanophotonic and quantum information applications.

  10. Weak localization and the approach to metal-insulator transition in single crystalline germanium nanowires

    NASA Astrophysics Data System (ADS)

    Sett, Shaili; Das, K.; Raychaudhuri, A. K.

    2017-03-01

    We study the low-temperature electronic transport properties of single germanium nanowires (NWs) with diameters down to 45 nm to investigate the weak localization (WL) behavior and approach to metal-insulator transition (MIT) within them. The NWs (single crystalline) we investigate lie on the metallic side of the MIT with an extrapolated zero temperature conductivity {σ0} in the range 23 to 1790 (Ω cm)-1 and show a temperature-dependent conductivity which below 30 K can be described by a 3D WL behavior with Thouless length {{L}\\text{Th}}˜ {{T}-\\frac{p{2}}} and p˜ 4 . From the observed value of {σ0} and the value of the critical carrier concentration n c, it is observed that the approach to MIT can be described by the scaling equation {σ0}˜ {{≤ft(n-{{n}\\text{c}}\\right)}ν} with ν ≈ 0.6 , which is a value expected for an uncompensated system. The investigation establishes a NW size limit for the applicability of 3D scaling theories.

  11. Experimental determination of single CdSe nanowire absorption cross sections through photothermal imaging.

    PubMed

    Giblin, Jay; Syed, Muhammad; Banning, Michael T; Kuno, Masaru; Hartland, Greg

    2010-01-26

    Absorption cross sections ((sigma)abs) of single branched CdSe nanowires (NWs) have been measured by photothermal heterodyne imaging (PHI). Specifically, PHI signals from isolated gold nanoparticles (NPs) with known cross sections were compared to those of individual CdSe NWs excited at 532 nm. This allowed us to determine average NW absorption cross sections at 532 nm of (sigma)abs = (3.17 +/- 0.44) x 10(-11) cm2/microm (standard error reported). This agrees well with a theoretical value obtained using a classical electromagnetic analysis ((sigma)abs = 5.00 x 10(-11) cm2/microm) and also with prior ensemble estimates. Furthermore, NWs exhibit significant absorption polarization sensitivities consistent with prior NW excitation polarization anisotropy measurements. This has enabled additional estimates of the absorption cross section parallel ((sigma)abs) and perpendicular ((sigma)abs(perpendicular) to the NW growth axis, as well as the corresponding NW absorption anisotropy ((rho)abs). Resulting values of (sigma)abs = (5.6 +/- 1.1) x 10(-11) cm2/microm, (sigma)abs(perpendicular) = (1.26 +/- 0.21) x 10(-11) cm2/microm, and (rho)abs = 0.63+/- 0.04 (standard errors reported) are again in good agreement with theoretical predictions. These measurements all indicate sizable NW absorption cross sections and ultimately suggest the possibility of future direct single NW absorption studies.

  12. Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current

    SciTech Connect

    Gasparyan, F.; Zadorozhnyi, I.; Vitusevich, S.

    2015-05-07

    The basic reason for enhanced electron capture time, τ{sub c}, of the oxide single trap dependence on drain current in the linear operation regime of p{sup +}-p-p{sup +} silicon field effect transistors (FETs) was established, using a quantum-mechanical approach. A strong increase of τ{sub c} slope dependence on channel current is explained using quantization and tunneling concepts in terms of strong field dependence of the oxide layer single trap effective cross-section, which can be described by an amplification factor. Physical interpretation of this parameter deals with the amplification of the electron cross-section determined by both decreasing the critical field influence as a result of the minority carrier depletion and the potential barrier growth for electron capture. For the NW channel of n{sup +}-p-n{sup +} FETs, the experimentally observed slope of τ{sub c} equals (−1). On the contrary, for the case of p{sup +}-p-p{sup +} Si FETs in the accumulation regime, the experimentally observed slope of τ{sub c} equals (−2.8). It can be achieved when the amplification factor is about 12. Extraordinary high capture time slope values versus current are explained by the effective capture cross-section growth with decreasing electron concentration close to the nanowire-oxide interface.

  13. Weak localization and the approach to metal-insulator transition in single crystalline germanium nanowires.

    PubMed

    Sett, Shaili; Das, K; Raychaudhuri, A K

    2017-03-22

    We study the low-temperature electronic transport properties of single germanium nanowires (NWs) with diameters down to 45 nm to investigate the weak localization (WL) behavior and approach to metal-insulator transition (MIT) within them. The NWs (single crystalline) we investigate lie on the metallic side of the MIT with an extrapolated zero temperature conductivity [Formula: see text] in the range 23 to 1790 [Formula: see text] cm)(-1) and show a temperature-dependent conductivity which below 30 K can be described by a 3D WL behavior with Thouless length [Formula: see text] and [Formula: see text]. From the observed value of [Formula: see text] and the value of the critical carrier concentration n c, it is observed that the approach to MIT can be described by the scaling equation [Formula: see text] with [Formula: see text], which is a value expected for an uncompensated system. The investigation establishes a NW size limit for the applicability of 3D scaling theories.

  14. Electrochemical aptamer-based nanosensor fabricated on single Au nanowire electrodes for adenosine triphosphate assay.

    PubMed

    Wang, Dongmei; Xiao, Xiaoqing; Xu, Shen; Liu, Yong; Li, Yongxin

    2018-01-15

    In this work, single Au nanowire electrodes (AuNWEs) were fabricated by laser-assisted pulling/hydrofluoric acid (HF) etching process, which then were characterized by transmission electron microscopy (TEM), electrochemical method and finite-element simulation. The as-prepared single AuNWEs were used to construct electrochemical aptamer-based nanosensors (E-AB nanosensors) based on the formation of Au-S bond that duplex DNA tagged with methylene blue (MB) was modified on the surface of electrode. In the presence of adenosine triphosphate (ATP), the MB-labeled aptamer dissociated from the duplex DNA due to the strong specific affinity between aptamer and target, which lead to the reduction of MB electrochemical signals. Moreover, BSA was employed to further passivate electrode surface bonding sites for the stable of the sensor. The as-prepared E-AB nanosensor has been used for ATP assay with excellent sensitivity and selectivity, even in a complex system like cerebrospinal fluid of rat brain. Considering the unique properties of good stability, larger surface area and smaller overall dimensions, this E-AB nanosensor should be an ideal platform for widely sensing applications in living bio-system. Copyright © 2017 Elsevier B.V. All rights reserved.

  15. InAs Nanowire with Epitaxial Aluminum as a Single-Electron Transistor with Fixed Tunnel Barriers

    NASA Astrophysics Data System (ADS)

    Taupin, M.; Mannila, E.; Krogstrup, P.; Maisi, V. F.; Nguyen, H.; Albrecht, S. M.; Nygârd, J.; Marcus, C. M.; Pekola, J. P.

    2016-11-01

    We report on the fabrication of single-electron transistors using InAs nanowires with epitaxial aluminum with fixed tunnel barriers made of aluminum oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminum cover shell, and they behave as metallic single-electron transistors. In contrast to the typical few-channel contacts in semiconducting devices, our approach forms opaque multichannel contacts to a semiconducting wire and, thus, provides a complementary way to study them. In addition, we confirm that unwanted extra quantum dots can appear at the surface of the nanowire. Their presence is prevented in our devices and also by inserting a protective layer of GaAs between the InAs and Al, the latter being suitable for standard measurement methods.

  16. Blue single photon emission up to 200 K from an InGaN quantum dot in AlGaN nanowire

    NASA Astrophysics Data System (ADS)

    Deshpande, Saniya; Das, Ayan; Bhattacharya, Pallab

    2013-04-01

    We demonstrate polarized blue single photon emission up to 200 K from an In0.2Ga0.8N quantum dot in a single Al0.1Ga0.9N nanowire. The InGaN/AlGaN dot-in-nanowire heterostructure was grown on (111) silicon by plasma assisted molecular beam epitaxy. Nanowires dispersed on a silicon substrate show sharp exciton and biexciton transitions in the micro-photoluminescence spectra. Second-order correlation measurements performed under pulsed excitation at the biexciton wavelength confirm single photon emission, with a g(2)(0) of 0.43 at 200 K. The emitted photons have a short radiative lifetime of 0.7 ns and are linearly polarized along the c-axis of the nanowire with a degree of polarization of 78%.

  17. Stereo-epitaxial growth of single-crystal Ni nanowires and nanoplates from aligned seed crystals

    NASA Astrophysics Data System (ADS)

    Lee, Hyoban; Yoo, Youngdong; Kang, Taejoon; Lee, Jiyoung; Kim, Eungwang; Fang, Xiaosheng; Lee, Sungyul; Kim, Bongsoo

    2016-05-01

    Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni seeds are determined by the interfacial energy between the bottom plane of the seeds and the substrates. The as-synthesized Ni NWs and nanoplates have blocking temperature values greater than 300 K at 500 Oe, verifying that these Ni nanostructures can form large magnetic DWs with high magnetic anisotropy properties. We anticipate that epitaxially grown Ni NWs and nanoplates will be used in various types of 3-dimensional magnetic devices.Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni

  18. From single III-nitride nanowires to piezoelectric generators: New route for powering nomad electronics

    NASA Astrophysics Data System (ADS)

    Gogneau, N.; Jamond, N.; Chrétien, P.; Houzé, F.; Lefeuvre, E.; Tchernycheva, M.

    2016-10-01

    Ambient energy harvesting using piezoelectric nanomaterials is today considered as a promising way to supply microelectronic devices. Since the first demonstration of electrical energy generation from piezoelectric semiconductor nanowires in 2006, the piezoelectric response of 1D-nanostructures and the development of nanowire-based piezogenerators have become a hot topic in nanoscience. After several years of intense research on ZnO nanowires, III-nitride nanomaterials have started to be explored thanks to their high piezoelectric coefficients and their strong piezogeneration response. This review describes the present status of the field of piezoelectric energy generation with nitride nanowires. After presenting the main motivation and a general overview of the domain, a short description of the main properties of III-nitride nanomaterials is given. Then we review the piezoelectric responses of III-N nanowires and the specificities of the piezogeneration mechanism in these nanostructures. Finally, the design and performance of the macroscopic piezogenerators based on nitride nanowire arrays are described, showing the promise of III-nitride nanowires for ultra-compact and efficient piezoelectric generators.

  19. Growth and Characterization of Single Crystal InAs Nanowire Arrays and their Application to Plasmonics

    DTIC Science & Technology

    2006-01-01

    molecular species. We have shown previously that Ga2O3 /Ag nanowire composites can be very efficient SERS substrates11,12, and we have suggested...geometry in the Ga2O3 nanowire case, it was not possible to test this suggestion. However, as shown above, we are now able to grow a variety of...When amorphous substrates are used, however, we can also produce flat, cross-over random geometries, similar to the Ga2O3 nanowire case. Thus

  20. Optoelectronics: Continuously Spatial-Wavelength-Tunable Nanowire Lasers on a Single Chip

    DTIC Science & Technology

    2014-01-28

    00 4 31 1 22 2 Pb -r ic h al lo y pe ak Pb -r ic h al lo y pe ak nanowire and nanobelt forms, especially the dependence of alloy composition on two...0.915 0.575 0.340 0.238 0.149 0.146 No rm al ize d In te ns ity (a .u .) Wavelength (nm) x= y= Figure 11 (a)TEM image of an examined...thin-film technology and are outside of nanowires, avoiding the complication of nanowire doping , which is still difficult to control. Also such design

  1. Single-Atom Scale Structural Selectivity in Te Nanowires Encapsulated Inside Ultranarrow, Single-Walled Carbon Nanotubes.

    PubMed

    Medeiros, Paulo V C; Marks, Samuel; Wynn, Jamie M; Vasylenko, Andrij; Ramasse, Quentin M; Quigley, David; Sloan, Jeremy; Morris, Andrew J

    2017-06-27

    Extreme nanowires (ENs) represent the ultimate class of crystals: They are the smallest possible periodic materials. With atom-wide motifs repeated in one dimension (1D), they offer a privileged perspective into the physics and chemistry of low-dimensional systems. Single-walled carbon nanotubes (SWCNTs) provide ideal environments for the creation of such materials. Here we present a comprehensive study of Te ENs encapsulated inside ultranarrow SWCNTs with diameters between 0.7 nm and 1.1 nm. We combine state-of-the-art imaging techniques and 1D-adapted ab initio structure prediction to treat both confinement and periodicity effects. The studied Te ENs adopt a variety of structures, exhibiting a true 1D realization of a Peierls structural distortion and transition from metallic to insulating behavior as a function of encapsulating diameter. We analyze the mechanical stability of the encapsulated ENs and show that nanoconfinement is not only a useful means to produce ENs but also may actually be necessary, in some cases, to prevent them from disintegrating. The ability to control functional properties of these ENs with confinement has numerous applications in future device technologies, and we anticipate that our study will set the basic paradigm to be adopted in the characterization and understanding of such systems.

  2. From single atoms to self-assembled quantum single-atomic nanowires: noble metal atoms on black phosphorene monolayers.

    PubMed

    Zhao, X J; Shan, Wen-Wen; He, Hao; Xue, Xinlian; Guo, Z X; Li, S F

    2017-03-15

    Transition metal (TM) nanostructures, such as one dimensional (1D) nanowires with/without substrates, usually possess drastically different properties from their bulk counterparts, due to their distinct stacking and electronic confinement. Correspondingly, it is of great importance to establish the dominant driving force in forming 1D single-metal-atom-wires (SMAWs). Here, with first-principles calculations, taking the black phosphorene (BP) monolayer as a prototype 2D substrate, we investigate the energetic and kinetic properties of all the 5d-TM atoms on the 2D substrate to reveal the mechanism of formation of SMAWs. In contrast to other 5d- and 4d-TMs, noble metal elements Pd and Pt are found to prefer to grow along the trough in an atom-by-atom manner, self-assembling into SMAWs with a significant magic growth behavior. This is due to distinct binding energies and diffusion barriers along the trough, i.e., zig-zag direction, as compared to other directions of the BP. The present findings are valuable in the fabrication and modulation of 1D nanostructures which can be anticipated to possess desirable functionalities for potential applications such as in nanocatalysis, nanosensors, and related areas.

  3. Sustained Resistive Switching in a Single Cu:7,7,8,8-tetracyanoquinodimethane Nanowire: A Promising Material for Resistive Random Access Memory

    PubMed Central

    Basori, Rabaya; Kumar, Manoranjan; Raychaudhuri, Arup K.

    2016-01-01

    We report a new type of sustained and reversible unipolar resistive switching in a nanowire device made from a single strand of Cu:7,7,8,8-tetracyanoquinodimethane (Cu:TCNQ) nanowire (diameter <100 nm) that shows high ON/OFF ratio (~103), low threshold voltage of switching (~3.5 V) and large cycling endurance (>103). This indicates a promising material for high density resistive random access memory (ReRAM) device integration. Switching is observed in Cu:TCNQ single nanowire devices with two different electrode configuration: symmetric (C-Pt/Cu:TCNQ/C-Pt) and asymmetric (Cu/Cu:TCNQ/C-Pt), where contacts connecting the nanowire play an important role. This report also developed a method of separating out the electrode and material contributions in switching using metal-semiconductor-metal (MSM) device model along with a direct 4-probe resistivity measurement of the nanowire in the OFF as well as ON state. The device model was followed by a phenomenological model of current transport through the nanowire device which shows that lowering of potential barrier at the contacts likely occur due to formation of Cu filaments in the interface between nanowire and contact electrodes. We obtain quantitative agreement of numerically analyzed results with the experimental switching data. PMID:27245099

  4. Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure

    DOE PAGES

    Liu, Sheng; Li, Changyi; Figiel, Jeffrey J.; ...

    2015-04-27

    In this paper, we report continuous, dynamic, reversible, and widely tunable lasing from 367 to 337 nm from single GaN nanowires (NWs) by applying hydrostatic pressure up to ~7 GPa. The GaN NW lasers, with heights of 4–5 μm and diameters ~140 nm, are fabricated using a lithographically defined two-step top-down technique. The wavelength tuning is caused by an increasing Γ direct bandgap of GaN with increasing pressure and is precisely controllable to subnanometer resolution. The observed pressure coefficients of the NWs are ~40% larger compared with GaN microstructures fabricated from the same material or from reported bulk GaN values,more » revealing a nanoscale-related effect that significantly enhances the tuning range using this approach. Finally, this approach can be generally applied to other semiconductor NW lasers to potentially achieve full spectral coverage from the UV to IR.« less

  5. Wavelength tunable single nanowire lasers based on surface plasmon polariton enhanced Burstein-Moss effect.

    PubMed

    Liu, Xinfeng; Zhang, Qing; Yip, Jing Ngei; Xiong, Qihua; Sum, Tze Chien

    2013-01-01

    Wavelength tunable semiconductor nanowire (NW) lasers are promising for multifunctional applications ranging from optical communication to spectroscopy analysis. Here, we present a demonstration of utilizing the surface plasmon polariton (SPP) enhanced Burstein-Moss (BM) effect to tune the lasing wavelength of a single semiconductor NW. The photonic lasing mode of the CdS NW (with length ~10 μm and diameter ~220 nm) significantly blue shifts from 504 to 483 nm at room temperature when the NW is in close proximity to the Au film. Systematic steady state power dependent photoluminescence (PL) and time-resolved PL studies validate that the BM effect in the hybrid CdS NW devices is greatly enhanced as a consequence of the strong coupling between the SPP and CdS excitons. With decreasing dielectric layer thickness h from 100 to 5 nm, the enhancement of the BM effect becomes stronger, leading to a larger blue shift of the lasing wavelength. Measurements of enhanced exciton emission intensities and recombination rates in the presence of Au film further support the strong interaction between SPP and excitons, which is consistent with the simulation results.

  6. Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices.

    PubMed

    Aurang, Pantea; Turan, Rasit; Unalan, Husnu Emrah

    2017-10-06

    Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.

  7. Superconducting nanowire single photon detectors based on amorphous superconductors (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Korzh, Boris; Caloz, Misael; Renema, Jelmer; Warburton, Richard J.; Schönenberger, Christian; Zbinden, Hugo; Bussières, Félix

    2017-05-01

    Superconducting nanowire single photon detectors (SNSPD) made from amorphous superconductors have showed great promise for achieving high fabrication yields, due to the highly uniform nature of the films. We present progress on the development of SNSPD based on amorphous MoSi with a critical temperature of around 5 K, which is ideal for detector operation at temperatures of 1 - 2.5 K, accessible with widely available cryogenic systems. First generation devices have achieved a saturated internal efficiency from visible to near-infrared wavelengths, which is the first requirement for high overall system efficiency. The broadband response has allowed us to make a robust study the energy-current relation in these devices, which defines the current required for a saturated internal detection efficiency for a given incident photon energy. Contrary to previous studies with other material systems, we find a nonlinear energy-current relation, which is an important insight into the detection mechanism in SNSPDs. The latest generation devices have been embedded into an micro-cavity structure in order to increase the system detection efficiency, which has increased to over 65% at 1550 nm. The efficiency is believed to be limited by fabrication imperfections and we present ongoing progress towards improving this characteristic as well as the yield of the devices. Efforts are also being made towards increasing the maximum operating temperature of the devices.

  8. On-Chip Multiplexed Multiple Entanglement Sources in a Single Silicon Nanowire

    NASA Astrophysics Data System (ADS)

    Li, Yin-Hai; Zhou, Zhi-Yuan; Feng, Lan-Tian; Fang, Wen-Tan; Liu, Shi-long; Liu, Shi-Kai; Wang, Kai; Ren, Xi-Feng; Ding, Dong-Sheng; Xu, Li-Xin; Shi, Bao-Sen

    2017-06-01

    The silicon-on-chip photonic circuit is a very promising platform for scalable quantum-information technology for its low loss, small footprint, and its compatibility with CMOS as well as telecom techniques. Multiplexed multiple entanglement sources, including energy-time, time-bin, and polarization-entangled sources based on 1-cm-length single silicon nanowire, are all compatible with the (100-GHz) dense-wave-division-multiplexing system. Different methods, such as two-photon interference as well as Bell-inequality and quantum-state tomography, are used to characterize the quality of these entangled sources. Multiple entanglements are generated over more than five channel pairs with high raw (net) visibilities of around 97% (100%). The emission spectral brightness of these entangled sources reaches 4.2 ×105/(s nm mW ) . The quality of the photon pair generated in the continuous and pulse-pump regimes are compared. The high quality of these multiple entanglement sources makes them very promising for use in minimized quantum-communication and computation systems.

  9. Single InAs/GaSb nanowire low-power CMOS inverter.

    PubMed

    Dey, Anil W; Svensson, Johannes; Borg, B Mattias; Ek, Martin; Wernersson, Lars-Erik

    2012-11-14

    III-V semiconductors have so far predominately been employed for n-type transistors in high-frequency applications. This development is based on the advantageous transport properties and the large variety of heterostructure combinations in the family of III-V semiconductors. In contrast, reports on p-type devices with high hole mobility suitable for complementary metal-oxide-semiconductor (CMOS) circuits for low-power operation are scarce. In addition, the difficulty to integrate both n- and p-type devices on the same substrate without the use of complex buffer layers has hampered the development of III-V based digital logic. Here, inverters fabricated from single n-InAs/p-GaSb heterostructure nanowires are demonstrated in a simple processing scheme. Using undoped segments and aggressively scaled high-κ dielectric, enhancement mode operation suitable for digital logic is obtained for both types of transistors. State-of-the-art on- and off-state characteristics are obtained and the individual long-channel n- and p-type transistors exhibit minimum subthreshold swings of SS = 98 mV/dec and SS = 400 mV/dec, respectively, at V(ds) = 0.5 V. Inverter characteristics display a full signal swing and maximum gain of 10.5 with a small device-to-device variability. Complete inversion is measured at low frequencies although large parasitic capacitances deform the waveform at higher frequencies.

  10. Design principles for single standing nanowire solar cells: going beyond the planar efficiency limits

    PubMed Central

    Zeng, Yang; Ye, Qinghao; Shen, Wenzhong

    2014-01-01

    Semiconductor nanowires (NWs) have long been used in photovoltaic applications but restricted to approaching the fundamental efficiency limits of the planar devices with less material. However, recent researches on standing NWs have started to reveal their potential of surpassing these limits when their unique optical property is utilized in novel manners. Here, we present a theoretical guideline for maximizing the conversion efficiency of a single standing NW cell based on a detailed study of its optical absorption mechanism. Under normal incidence, a standing NW behaves as a dielectric resonator antenna, and its optical cross-section shows its maximum when the lowest hybrid mode (HE11δ) is excited along with the presence of a back-reflector. The promotion of the cell efficiency beyond the planar limits is attributed to two effects: the built-in concentration caused by the enlarged optical cross-section, and the shifting of the absorption front resulted from the excited mode profile. By choosing an optimal NW radius to support the HE11δ mode within the main absorption spectrum, we demonstrate a relative conversion-efficiency enhancement of 33% above the planar cell limit on the exemplary a-Si solar cells. This work has provided a new basis for designing and analyzing standing NW based solar cells. PMID:24810591

  11. Dual-frequency Doppler lidar for wind detection with a superconducting nanowire single-photon detector.

    PubMed

    Shangguan, Mingjia; Xia, Haiyun; Wang, Chong; Qiu, Jiawei; Lin, Shengfu; Dou, Xiankang; Zhang, Qiang; Pan, Jian-Wei

    2017-09-15

    A dual-frequency direct detection Doppler lidar is demonstrated using a superconducting nanowire single-photon detector (SNSPD) at 1.5 μm. The so-called double-edge technique is implemented by using a dual-frequency laser pulse, rather than using a double-channel Fabry-Perot interferometer. Such a modification to the reported lidars enhances the frequency stability in the system level. Using the time-division multiplexing method, only one piece of SNSPD is used in the optical receiver, making the system simplified and robust. The SNSPD is adopted to enhance the temporal resolution since it offers merits of high quantum efficiency, low dark count noise, no after-pulsing probability, and a high maximum count rate. Two telescopes that point westward and northward at a zenith angle of 30° are used to detect the line-of-sight wind components, which are used to synthesize the horizontal wind profile. Horizontal wind profiles up to an altitude of about 2.7 km are calculated with vertical spatial/temporal resolution of 10 m/10 s. Wind dynamic evolution and vertical wind shears are observed clearly.

  12. Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices

    NASA Astrophysics Data System (ADS)

    Aurang, Pantea; Turan, Rasit; Emrah Unalan, Husnu

    2017-10-01

    Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.

  13. Free-space-coupled superconducting nanowire single-photon detectors for infrared optical communications

    NASA Astrophysics Data System (ADS)

    Bellei, Francesco; Cartwright, Alyssa P.; McCaughan, Adam N.; Dane, Andrew E.; Najafi, Faraz; Zhao, Qingyuan; Berggren, Karl K.

    2016-02-01

    This paper describes the construction of a cryostat and an optical system with a free-space coupling efficiency of 56.5% +/- 3.4% to a superconducting nanowire single-photon detector (SNSPD) for infrared quantum communication and spectrum analysis. A 1K pot decreases the base temperature to T = 1.7 K from the 2.9 K reached by the cold head cooled by a pulse-tube cryocooler. The minimum spot size coupled to the detector chip was 6.6 +/- 0.11 {\\mu}m starting from a fiber source at wavelength, {\\lambda} = 1.55 {\\mu}m. We demonstrated efficient photon counting on a detector with an 8 x 7.3 {\\mu}m^2 area. We measured a dark count rate of 95 +/- 3.35 kcps and a system detection efficiency of 1.64% +/- 0.13%. We explain the key steps that are required to further improve the coupling efficiency.

  14. Direct Measurement of Single CdSe Nanowire Extinction Polarization Anisotropies.

    PubMed

    McDonald, Matthew P; Vietmeyer, Felix; Kuno, Masaru

    2012-08-16

    The origin of sizable absorption polarization anisotropies (ρabs) in one-dimensional (1D) semiconductor nanowires (NWs) has been debated. Invoked explanations employ either classical or quantum mechanical origins, where the classical approach suggests dielectric constant mismatches between the NW and its surrounding environment as the predominant source of observed polarization sensitivities. At the same time, the confinement-influenced mixing of states suggests a sizable contribution from polarization-sensitive transition selection rules. Sufficient evidence exists in the literature to support either claim. However, in all cases, these observations stem from excitation polarization anisotropy (ρexc) studies, which only indirectly measure ρabs. In this manuscript, we directly measure the band edge extinction polarization anisotropies (ρext) of individual CdSe NWs using single NW extinction spectroscopy. Observed polarization anisotropies possess distinct spectral features and wavelength dependencies that correlate well with theoretical transition selection rules derived from a six-band k·p theory used to model the electronic structure of CdSe NWs.

  15. Single Schottky junction FETs based on Si:P nanowires with axially graded doping

    NASA Astrophysics Data System (ADS)

    Barreda, Jorge; Keiper, Timothy; Zhang, Mei; Xiong, Peng

    2015-03-01

    Si nanowires (NWs) with a systematic axial increase in phosphorus doping have been synthesized via a vapor-liquid-solid method. Silane and phosphine precursor gases are utilized for the growth and doping, respectively. The phosphorous doping profile is controlled by the flow ratio of the precursor gases. After the as-grown product is ultrasonically agitated into a solution, the Si NWs are dispersed on a SiO2 substrate with a highly doped Si back gate. Individual NWs are identified for the fabrication of field-effect transistors (FETs) with multiple Cr/Ag contacts along the NW. Two-probe and four-probe measurements are taken systematically under vacuum conditions at room temperature and the contribution from each contact and each NW section between adjacent contacts is determined. The graded doping level, produced by a systematic reduction in dopant density along the length of the NWs, is manifested in the regular increases in the channel and contact resistances. Our Si NWs facilitate the fabrication of asymmetric FETs with one ohmic and one Schottky contact. A significant increase in gate modulation is obtained due to the single Schottky-barrier contact. Characterization details and the applicability for sensing purposes will be discussed.

  16. The Electrochemical Response of Single Crystalline Copper Nanowires to Atmospheric Air and Aqueous Solution.

    PubMed

    Zhang, Bowei; Chen, Bensong; Wu, Junsheng; Hao, Shiji; Yang, Guang; Cao, Xun; Jing, Lin; Zhu, Minmin; Tsang, Siu Hon; Teo, Edwin Hang Tong; Huang, Yizhong

    2017-03-01

    In this paper, single crystalline copper nanowires (CuNWs) have been electrochemically grown through anodic aluminum oxide template. The environmental stability of the as-obtained CuNWs in both 40% relative humidity (RH) atmosphere and 0.1 m NaOH aqueous solution has been subsequently studied. In 40% RH atmosphere, a uniform compact Cu2 O layer is formed as a function of exposure time following the logarithmic law and epitaxially covers the CuNW surfaces. It is also found that the oxide layers on CuNWs are sequentially grown when subjected to the cyclic voltammetry measurement in 0.1 m NaOH solution. An epitaxially homogeneous Cu2 O layer is initially formed over the surface of the CuNW substrates by solid-state reaction (SSR). Subsequently, the conversion of Cu2 O into epitaxial CuO based on the SSR takes place with the increase of applied potential. This CuO layer is partially dissolved in the solution forming Cu(OH)2 , which then redeposited on the CuNW surfaces (i.e., dissolution-redeposition (DR) process) giving rise to a mixed polycrystalline CuO/Cu(OH)2 layer. The further increase of applied potential allows the complete oxidation of Cu2 O into CuO to form a dual-layer structure (i.e., CuO inner layer and Cu(OH)2 outer layer) with random orientations through an enhanced DR process.

  17. Design principles for single standing nanowire solar cells: going beyond the planar efficiency limits

    NASA Astrophysics Data System (ADS)

    Zeng, Yang; Ye, Qinghao; Shen, Wenzhong

    2014-05-01

    Semiconductor nanowires (NWs) have long been used in photovoltaic applications but restricted to approaching the fundamental efficiency limits of the planar devices with less material. However, recent researches on standing NWs have started to reveal their potential of surpassing these limits when their unique optical property is utilized in novel manners. Here, we present a theoretical guideline for maximizing the conversion efficiency of a single standing NW cell based on a detailed study of its optical absorption mechanism. Under normal incidence, a standing NW behaves as a dielectric resonator antenna, and its optical cross-section shows its maximum when the lowest hybrid mode (HE11δ) is excited along with the presence of a back-reflector. The promotion of the cell efficiency beyond the planar limits is attributed to two effects: the built-in concentration caused by the enlarged optical cross-section, and the shifting of the absorption front resulted from the excited mode profile. By choosing an optimal NW radius to support the HE11δ mode within the main absorption spectrum, we demonstrate a relative conversion-efficiency enhancement of 33% above the planar cell limit on the exemplary a-Si solar cells. This work has provided a new basis for designing and analyzing standing NW based solar cells.

  18. Stereo-epitaxial growth of single-crystal Ni nanowires and nanoplates from aligned seed crystals.

    PubMed

    Lee, Hyoban; Yoo, Youngdong; Kang, Taejoon; Lee, Jiyoung; Kim, Eungwang; Fang, Xiaosheng; Lee, Sungyul; Kim, Bongsoo

    2016-05-21

    Epitaxially grown anisotropic Ni nanostructures are promising building blocks for the development of miniaturized and stereo-integrated data storage kits because they can store multiple magnetic domain walls (DWs). Here, we report stereo-epitaxially grown single-crystalline Ni nanowires (NWs) and nanoplates, and their magnetic properties. Vertical and inclined Ni NWs were grown at the center and edge regions of c-cut sapphire substrates, respectively. Vertical Ni nanoplates were grown on r-cut sapphire substrates. The morphology and growth direction of Ni nanostructures can be steered by seed crystals. Cubic Ni seeds grow into vertical Ni NWs, tetrahedral Ni seeds grow into inclined Ni NWs, and triangular Ni seeds grow into vertical Ni nanoplates. The shapes of the Ni seeds are determined by the interfacial energy between the bottom plane of the seeds and the substrates. The as-synthesized Ni NWs and nanoplates have blocking temperature values greater than 300 K at 500 Oe, verifying that these Ni nanostructures can form large magnetic DWs with high magnetic anisotropy properties. We anticipate that epitaxially grown Ni NWs and nanoplates will be used in various types of 3-dimensional magnetic devices.

  19. Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients

    NASA Astrophysics Data System (ADS)

    Huh, Junghwan; Kim, Dong-Chul; Mazid Munshi, A.; Dheeraj, Dasa L.; Jang, Doyoung; Kim, Gyu-Tae; Fimland, Bjørn-Ove; Weman, Helge

    2016-09-01

    Due to bandgap tunability, GaAsSb nanowires (NWs) have received a great deal of attention for a variety of optoelectronic device applications. However, electrical and optical properties of GaAsSb are strongly affected by Sb-related defects and scattering from surface states and/or defects, which can limit the performance of GaAsSb NW devices. Thus, in order to utilize the GaAsSb NWs for high performance electronic and optoelectronic devices, it is required to study the material and interface properties (e.g. the interface trap density) in the GaAsSb NW devices. Here, we investigate the low frequency noise in single GaAsSb NWs with self-induced compositional gradients. The current noise spectral density of the GaAsSb NW device showed a typical 1/f noise behavior. The Hooge’s noise parameter and the interface trap density of the GaAsSb NW device were found to be ˜2.2 × 10-2 and ˜2 × 1012 eV-1 cm-2, respectively. By applying low frequency noise measurements, the noise equivalent power, a key figure of merit of photodetectors, was calculated. The observed low frequency noise properties can be useful as guidance for quality and reliability of GaAsSb NW based electronic devices, especially for photodetectors.

  20. Atomistic simulations of nanowelding of single-crystal and amorphous gold nanowires

    SciTech Connect

    Wu, Cheng-Da; Fang, Te-Hua Wu, Chung-Chin

    2015-01-07

    The mechanism and quality of the welding of single-crystal (SC) and amorphous gold nanowires (NWs) with head-to-head contact are studied using molecular dynamics simulations based on the second-moment approximation of the many-body tight-binding potential. The results are discussed in terms of atomic trajectories, slip vectors, stress, and radial distribution function. Simulation results show that the alignment for the amorphous NWs during welding is easier than that for the SC NWs due to the former's relatively stable geometry. A few dislocations nucleate and propagate on the (111) close-packed plane (slip plane) inside the SC NWs during the welding and stretching processes. During welding, an incomplete jointing area first forms through the interactions of the van der Waals attractive force, and the jointing area increases with increasing extent of contact between the two NWs. A crystallization transition region forms in the jointing area for the welding of SC-amorphous or amorphous-SC NWs. With increasing interference, an amorphous gold NW shortens more than does a SC gold NW due to the former's relatively poor strength. The pressure required for welding decreases with increasing temperature.

  1. Nanowire-based detector

    DOEpatents

    Berggren, Karl K; Hu, Xiaolong; Masciarelli, Daniele

    2014-06-24

    Systems, articles, and methods are provided related to nanowire-based detectors, which can be used for light detection in, for example, single-photon detectors. In one aspect, a variety of detectors are provided, for example one including an electrically superconductive nanowire or nanowires constructed and arranged to interact with photons to produce a detectable signal. In another aspect, fabrication methods are provided, including techniques to precisely reproduce patterns in subsequently formed layers of material using a relatively small number of fabrication steps. By precisely reproducing patterns in multiple material layers, one can form electrically insulating materials and electrically conductive materials in shapes such that incoming photons are redirected toward a nearby electrically superconductive materials (e.g., electrically superconductive nanowire(s)). For example, one or more resonance structures (e.g., comprising an electrically insulating material), which can trap electromagnetic radiation within its boundaries, can be positioned proximate the nanowire(s). The resonance structure can include, at its boundaries, electrically conductive material positioned proximate the electrically superconductive nanowire such that light that would otherwise be transmitted through the sensor is redirected toward the nanowire(s) and detected. In addition, electrically conductive material can be positioned proximate the electrically superconductive nanowire (e.g. at the aperture of the resonant structure), such that light is directed by scattering from this structure into the nanowire.

  2. 1.55 µm emission from a single III-nitride top-down and site-controlled nanowire quantum disk

    NASA Astrophysics Data System (ADS)

    Chen, Qiming; Yan, Changling; Qu, Yi

    2017-07-01

    InN/InGaN single quantum well (SQW) was fabricated on 100 nm GaN buffer layer which was deposited on GaN template by plasma assisted molecular beam epitaxy (PA-MBE). The In composition and the surface morphology were measured by x-ray diffusion (XRD) and atom force microscope (AFM), respectively. Afterwards, the sample was fabricated into site-controlled nanowires arrays by hot-embossing nano-imprint lithography (HE-NIL) and ultraviolet nanoimprint lithography (UV-NIL). The nanowires were uniform along the c-axis and aligned periodically as presented by scanning electron microscope (SEM). The single nanowire showed disk-in-a-wire structure by high angle annular dark field (HAADF) and an In-rich or Ga deficient region was observed by energy dispersive x-ray spectrum (EDXS). The optical properties of the SQW film and single nanowire were measured using micro photoluminescence (µ-PL) spectroscopy. The stimulating light wavelength was 632.8 nm which was emitted from a He-Ne laser and the detector was a liquid nitrogen cooled InGaAs detector. A blue peak shift from the film material to the nanowire was observed. This was due to the quantum confinement Stark Effect. More importantly, the 1.55 µm emission was given from the single disk-in-a-wire structure at room temperature. We believe the arrays of such nanowires may be useful for quantum communication in the future.

  3. Optical properties of single wurtzite/zinc-blende ZnSe nanowires grown at low temperature

    SciTech Connect

    Zannier, V.; Cremel, T.; Kheng, K.; Artioli, A.; Ferrand, D.; Grillo, V.

    2015-09-07

    ZnSe nanowires with a dominant wurtzite structure have been grown at low temperature (300 °C) by molecular beam epitaxy assisted by solid Au nanoparticles. The nanowires emission is polarized perpendicularly to their axis in agreement with the wurtzite selection rules. Alternations of wurtzite and zinc-blende regions have been observed by transmission electron microscopy, and their impact on the nanowires optical properties has been studied by microphotoluminescence. The nanowires show a dominant intense near-band-edge emission as well as the ZnSe wurtzite free exciton line. A type II band alignment between zinc-blende and wurtzite ZnSe is evidenced by time-resolved photoluminescence. From this measurement, we deduce values for the conduction and valence band offsets of 98 and 50 meV, respectively.

  4. Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering

    SciTech Connect

    Khanal, D. R.; Levander, A. X.; Wu, J.; Yu, K. M.; Liliental-Weber, Z.; Walukiewicz, W.; Grandal, J.; Sanchez-Garcia, M. A.; Calleja, E.

    2011-08-01

    We demonstrate the isolation of two free carrier scattering mechanisms as a function of radial band bending in InN nanowires via universal mobility analysis, where effective carrier mobility is measured as a function of effective electric field in a nanowire field-effect transistor. Our results show that Coulomb scattering limits effective mobility at most effective fields, while surface roughness scattering only limits mobility under very high internal electric fields. High-energy {alpha} particle irradiation is used to vary the ionized donor concentration, and the observed decrease in mobility and increase in donor concentration are compared to Hall effect results of high-quality InN thin films. Our results show that for nanowires with relatively high doping and large diameters, controlling Coulomb scattering from ionized dopants should be given precedence over surface engineering when seeking to maximize nanowire mobility.

  5. A new approach to fabricating magnetic multilayer nanowires by modifying the ac pulse electrodeposition in a single bath

    NASA Astrophysics Data System (ADS)

    Ramazani, A.; Ghaffari, M.; Almasi Kashi, M.; Kheiry, F.; Eghbal, F.

    2014-09-01

    This work focused on the development of a new single bath technique to fabricate compositionally modulated Co/Cu, CoFe/Cu and Fe/Cu multilayer nanowires in nanoporous alumina templates prepared by the hard and mild anodization methods. The approach was based on ac pulse electrodeposition, employing successive cycles of alternating continuous and pulsed sine waves with designated off-time between pulses and reduction/oxidation voltages. The substantial control over the composition of each segment was achieved by simultaneous change in the off-time between pulses and the ac deposition voltage. The multilayered nature of the nanostructures was substantiated by transmission electron microscopy. Each layer thickness was also nearly uniform, and could be readily adjusted by the number of pulses. The proposed method facilitates the fabrication of various multilayer nanowires in a single bath, which speeds up the fabrication process and is desirable for their application in nanodevices and nanoelectronics. The effect of magnetic layer thickness on the magnetic behaviour was also studied. Decreasing the magnetic layer thickness caused the parallel coercivity and squareness values to approach those measured in the perpendicular direction. The magnetic easy axis changed from parallel to nearly perpendicular to the nanowire axis, depending on the magnetic layers' aspect ratio and shape anisotropies.

  6. Pressure-Induced Amorphization in Single-Crystal Ta2O5 Nanowires: A Kinetic Mechanism and Improved Electrical Conductivity

    NASA Astrophysics Data System (ADS)

    Lu, Xujie; Hu, Qingyang; Yang, Wenge; Bai, Ligang; Sheng, Howard; Wang, Lin; Huang, Fuqiang; Wen, Jianguo; Miller, Dean; Zhao, Yusheng

    2014-03-01

    Pressure-induced amorphization (PIA) in single-crystal Ta2O5 nanowires is observed at 19 GPa and the obtained amorphous Ta2O5 nanowires show significant improvement in electrical conductivity. The phase transition process is unveiled by monitoring structural evolution with in-situ synchrotron XRD, PDF, Raman spectroscopy and TEM. The first principles calculations reveal the phonon modes softening during compression at particular bonds, and the analysis on the electron localization function also shows bond strength weakening at the same positions. Based on the experimental and theoretical results, a kinetic PIA mechanism is proposed and demonstrated systematically that amorphization is initiated by the disruption of connectivity between polyhedra at the particular weak-bonding positions along the a-axis in the unit cell. The one-dimensional morphology is well preserved for the pressure-induced amorphous Ta2O5 and the electrical conductivity is improved by an order of magnitude compared to traditional amorphous forms.

  7. Enhanced Photoelectrical Response of Hydrogenated Amorphous Silicon Single-Nanowire Solar Cells by Front-Opening Crescent Design

    NASA Astrophysics Data System (ADS)

    Yang, Zhenhai; Cao, Guoyang; Shang, Aixue; Lei, Dang Yuan; Zhang, Cheng; Gao, Pingqi; Ye, Jichun; Li, Xiaofeng

    2016-04-01

    We report an approach for substantially enhancing the light-trapping and photoconversion efficiency of hydrogenated amorphous silicon (a-Si:H) single-nanowire solar cells (SNSCs) by engineering the cross section of the nanowire from circular into a front-opening crescent shape. The proposed SNSCs show a broadband and highly tunable optical absorption compared to the conventional circular counterparts under both transverse electric and transverse magnetic incidences, enabling an enhancement ratio of over 40 % in both the photocurrent density and the photoconversion efficiency in a-Si:H SNSCs with a diameter of 200 nm. We further show that the superior performance can be well maintained under a wide range of incident angle and is robust to the blunt crescent edges.

  8. Enhanced Photoelectrical Response of Hydrogenated Amorphous Silicon Single-Nanowire Solar Cells by Front-Opening Crescent Design.

    PubMed

    Yang, Zhenhai; Cao, Guoyang; Shang, Aixue; Lei, Dang Yuan; Zhang, Cheng; Gao, Pingqi; Ye, Jichun; Li, Xiaofeng

    2016-12-01

    We report an approach for substantially enhancing the light-trapping and photoconversion efficiency of hydrogenated amorphous silicon (a-Si:H) single-nanowire solar cells (SNSCs) by engineering the cross section of the nanowire from circular into a front-opening crescent shape. The proposed SNSCs show a broadband and highly tunable optical absorption compared to the conventional circular counterparts under both transverse electric and transverse magnetic incidences, enabling an enhancement ratio of over 40 % in both the photocurrent density and the photoconversion efficiency in a-Si:H SNSCs with a diameter of 200 nm. We further show that the superior performance can be well maintained under a wide range of incident angle and is robust to the blunt crescent edges.

  9. Growth kinetics of a single InP1-xAsx nanowire

    NASA Astrophysics Data System (ADS)

    Harmand, Jean-Christophe; Glas, Frank; Patriarche, Gilles

    2010-06-01

    Semiconductor nanowires offer additional properties and more flexibility for many potential applications. However the precise control of their growth is very challenging and much more complex than for two-dimensional layers. Here, we present a method which provides detailed information on their formation. The method is implemented with In(P,As) nanowires grown by Au-catalyzed molecular beam epitaxy. Controlled and periodic modulations of the incident vapor phase are generated. Due to these modulations, the nanowires show small and short oscillations of composition along their growth axis. These oscillations furnish a time scale which is recorded in the nanowire solid phase. The instantaneous growth rate and the total length of the nanowire at any time of the growth are accessible. The experimental data are fitted with models. The adatom diffusion lengths on the different surfaces and the chemical potentials in the adsorbed and liquid phases are extracted. It appears that the vapor flux intercepted by the nanowire sidewalls is the dominant contribution to their elongation. We discuss which contribution allows one initiating their growth from the catalyst drop.

  10. Temperature Dependence of Electrical and Thermal Conduction in Single Silver Nanowire

    PubMed Central

    Cheng, Zhe; Liu, Longju; Xu, Shen; Lu, Meng; Wang, Xinwei

    2015-01-01

    In this work, the thermal and electrical transport in an individual silver nanowire is characterized down to 35 K for in-depth understanding of the strong structural defect induced electron scattering. The results indicate that, at room temperature, the electrical resistivity increases by around 4 folds from that of bulk silver. The Debye temperature (151 K) of the silver nanowire is found 36% lower than that (235 K) of bulk silver, confirming strong phonon softening. At room temperature, the thermal conductivity is reduced by 55% from that of bulk silver. This reduction becomes larger as the temperature goes down. To explain the opposite trends of thermal conductivity (κ) ~ temperature (T) of silver nanowire and bulk silver, a unified thermal resistivity () is used to elucidate the electron scattering mechanism. A large residual Θ is observed for silver nanowire while that of the bulk silver is almost zero. The same ~T trend proposes that the silver nanowire and bulk silver share the similar phonon-electron scattering mechanism for thermal transport. Due to phonon-assisted electron energy transfer across grain boundaries, the Lorenz number of the silver nanowire is found much larger than that of bulk silver and decreases with decreasing temperature. PMID:26035288

  11. Temperature dependence of electrical and thermal conduction in single silver nanowire.

    PubMed

    Cheng, Zhe; Liu, Longju; Xu, Shen; Lu, Meng; Wang, Xinwei

    2015-06-02

    In this work, the thermal and electrical transport in an individual silver nanowire is characterized down to 35 K for in-depth understanding of the strong structural defect induced electron scattering. The results indicate that, at room temperature, the electrical resistivity increases by around 4 folds from that of bulk silver. The Debye temperature (151 K) of the silver nanowire is found 36% lower than that (235 K) of bulk silver, confirming strong phonon softening. At room temperature, the thermal conductivity is reduced by 55% from that of bulk silver. This reduction becomes larger as the temperature goes down. To explain the opposite trends of thermal conductivity (κ) ~ temperature (T) of silver nanowire and bulk silver, a unified thermal resistivity (Θ ~ T/k ) is used to elucidate the electron scattering mechanism. A large residual Θ is observed for silver nanowire while that of the bulk silver is almost zero. The same Θ ~ T trend proposes that the silver nanowire and bulk silver share the similar phonon-electron scattering mechanism for thermal transport. Due to phonon-assisted electron energy transfer across grain boundaries, the Lorenz number of the silver nanowire is found much larger than that of bulk silver and decreases with decreasing temperature.

  12. Orientation effect on the giant stress field induced in a single Ni nanowire by mechanical strain

    NASA Astrophysics Data System (ADS)

    Melilli, G.; Madon, B.; Clochard, M.-C.; Wegrowe, J.-E.

    2015-09-01

    The change of magnetization (i.e. using the inverse magnetostriction effect) allows to investigate at the nanoscale the effects of thermoelastic and piezoelectric strain of an active track-etched β-PVDF polymer matrix on an electrodeposited single-contacted Ni nanowire (NW). The magnetization state is measured locally by anisotropic magnetoresitance (AMR). The ferromagnetic NW plays thus the role of a mechanical probe that allows the effects of mechanical strain to be characterized and described qualitatively and quantitatively. Due to the inverse magnetostriction, a quasi-disappearance of the AMR signal for a variation of the order of ΔT ≍ 10 K has been evidenced. The coplanarity of the vectors between the magnetization and the magnetic field is broken. A way of studying the effect of the geometry on such a system, is to fabricate oriented polymer templates. Track-etched polymer membranes were thus irradiated at various angles (αirrad) leading, after electrodeposition, to embedded Ni NWs of different orientations. With cylindrical Ni NW oriented normally to the template surface, the induced stress field in a single Ni NW was found 1000 time higher than the bulk stress field (due to thermal expansion measured on the PVDF). This amplification results in three nanoscopic effects: (1) a stress mismatch between the Ni NW and the membrane, (2) a non-negligible role of the surface tension on Ni NW Young modulus, and (3) the possibility of non-linear stress-strain law. When the Ni NWs are tilted from the polymer template surface normality, the induced stress field is reduced and the amplification phenomenon is less important.

  13. Quantum detector tomography of a time-multiplexed superconducting nanowire single-photon detector at telecom wavelengths.

    PubMed

    Natarajan, Chandra M; Zhang, Lijian; Coldenstrodt-Ronge, Hendrik; Donati, Gaia; Dorenbos, Sander N; Zwiller, Val; Walmsley, Ian A; Hadfield, Robert H

    2013-01-14

    Superconducting nanowire single-photon detectors (SNSPDs) are widely used in telecom wavelength optical quantum information science applications. Quantum detector tomography allows the positive-operator-valued measure (POVM) of a single-photon detector to be determined. We use an all-fiber telecom wavelength detector tomography test bed to measure detector characteristics with respect to photon flux and polarization, and hence determine the POVM. We study the SNSPD both as a binary detector and in an 8-bin, fiber based, Time-Multiplexed (TM) configuration at repetition rates up to 4 MHz. The corresponding POVMs provide an accurate picture of the photon number resolving capability of the TM-SNSPD.

  14. Quantum Transport and Nano Angle-resolved Photoemission Spectroscopy on the Topological Surface States of Single Sb2Te3 Nanowires.

    PubMed

    Arango, Yulieth C; Huang, Liubing; Chen, Chaoyu; Avila, Jose; Asensio, Maria C; Grützmacher, Detlev; Lüth, Hans; Lu, Jia Grace; Schäpers, Thomas

    2016-09-01

    We report on low-temperature transport and electronic band structure of p-type Sb2Te3 nanowires, grown by chemical vapor deposition. Magnetoresistance measurements unravel quantum interference phenomena, which depend on the cross-sectional dimensions of the nanowires. The observation of periodic Aharonov-Bohm-type oscillations is attributed to transport in topologically protected surface states in the Sb2Te3 nanowires. The study of universal conductance fluctuations demonstrates coherent transport along the Aharonov-Bohm paths encircling the rectangular cross-section of the nanowires. We use nanoscale angle-resolved photoemission spectroscopy on single nanowires (nano-ARPES) to provide direct experimental evidence on the nontrivial topological character of those surface states. The compiled study of the bandstructure and the magnetotransport response unambiguosly points out the presence of topologically protected surface states in the nanowires and their substantial contribution to the quantum transport effects, as well as the hole doping and Fermi velocity among other key issues. The results are consistent with the theoretical description of quantum transport in intrinsically doped quasi-one-dimensional topological insulator nanowires.

  15. Quantum Transport and Nano Angle-resolved Photoemission Spectroscopy on the Topological Surface States of Single Sb2Te3 Nanowires

    NASA Astrophysics Data System (ADS)

    Arango, Yulieth C.; Huang, Liubing; Chen, Chaoyu; Avila, Jose; Asensio, Maria C.; Grützmacher, Detlev; Lüth, Hans; Lu, Jia Grace; Schäpers, Thomas

    2016-09-01

    We report on low-temperature transport and electronic band structure of p-type Sb2Te3 nanowires, grown by chemical vapor deposition. Magnetoresistance measurements unravel quantum interference phenomena, which depend on the cross-sectional dimensions of the nanowires. The observation of periodic Aharonov-Bohm-type oscillations is attributed to transport in topologically protected surface states in the Sb2Te3 nanowires. The study of universal conductance fluctuations demonstrates coherent transport along the Aharonov-Bohm paths encircling the rectangular cross-section of the nanowires. We use nanoscale angle-resolved photoemission spectroscopy on single nanowires (nano-ARPES) to provide direct experimental evidence on the nontrivial topological character of those surface states. The compiled study of the bandstructure and the magnetotransport response unambiguosly points out the presence of topologically protected surface states in the nanowires and their substantial contribution to the quantum transport effects, as well as the hole doping and Fermi velocity among other key issues. The results are consistent with the theoretical description of quantum transport in intrinsically doped quasi-one-dimensional topological insulator nanowires.

  16. Quantum Transport and Nano Angle-resolved Photoemission Spectroscopy on the Topological Surface States of Single Sb2Te3 Nanowires

    PubMed Central

    Arango, Yulieth C.; Huang, Liubing; Chen, Chaoyu; Avila, Jose; Asensio, Maria C.; Grützmacher, Detlev; Lüth, Hans; Lu, Jia Grace; Schäpers, Thomas

    2016-01-01

    We report on low-temperature transport and electronic band structure of p-type Sb2Te3 nanowires, grown by chemical vapor deposition. Magnetoresistance measurements unravel quantum interference phenomena, which depend on the cross-sectional dimensions of the nanowires. The observation of periodic Aharonov-Bohm-type oscillations is attributed to transport in topologically protected surface states in the Sb2Te3 nanowires. The study of universal conductance fluctuations demonstrates coherent transport along the Aharonov-Bohm paths encircling the rectangular cross-section of the nanowires. We use nanoscale angle-resolved photoemission spectroscopy on single nanowires (nano-ARPES) to provide direct experimental evidence on the nontrivial topological character of those surface states. The compiled study of the bandstructure and the magnetotransport response unambiguosly points out the presence of topologically protected surface states in the nanowires and their substantial contribution to the quantum transport effects, as well as the hole doping and Fermi velocity among other key issues. The results are consistent with the theoretical description of quantum transport in intrinsically doped quasi-one-dimensional topological insulator nanowires. PMID:27581169

  17. Diagnostics and Degradation Investigations of Li-Ion Battery Electrodes using Single Nanowire Electrochemical Cells

    NASA Astrophysics Data System (ADS)

    Palapati, Naveen Kumar Reddy

    Portable energy storage devices, which drive advanced technological devices, are improving the productivity and quality of our everyday lives. In order to meet the growing needs for energy storage in transportation applications, the current lithium-ion (Li-ion) battery technology requires new electrode materials with performance improvements in multiple aspects: (1) energy and power densities, (2) safety, and (3) performance lifetime. While a number of interesting nanomaterials have been synthesized in recent years with promising performance, accurate capabilities to probe the intrinsic performance of these high-performance materials within a battery environment are lacking. Most studies on electrode nanomaterials have so far used traditional, bulk-scale techniques such as cyclic voltammetry, electrochemical impedance spectroscopy, and Raman spectroscopy. These approaches give an ensemble-average estimation of the electrochemical properties of a battery electrode and does not provide a true indication of the performance that is intrinsic to its material system. Thus, new techniques are essential to understand the changes happening at a single particle level during the operation of a battery. The results from this thesis solve this need and study the electrical, mechanical and size changes that take place in a battery electrode at a single particle level. Single nanowire lithium cells are built by depositing nanowires in carefully designed device regions of a silicon chip using Dielectrophoresis (DEP). This work has demonstrated the assembly of several NW cathode materials like LiFePO 4, pristine and acid-leached alpha-MnO2, todorokite - MnO2, acid and nonacid-leached Na0.44MnO2. Within these materials, alpha-MnO2 was chosen as the model material system for electrochemical experiments. Electrochemical lithiation of pristine alpha-MnO 2 was performed inside a glove box. The volume, elasticity and conductivity changes were measured at each state-of-charge (SOC) to

  18. Single crystalline monoclinic La0.7Sr0.3MnO3 nanowires with high temperature ferromagnetism

    SciTech Connect

    Carretero-Genevrier, Adrian; Gazquez Alabart, Jaume; Idrobo Tapia, Juan C; Oro, Judith; Arbiol, Jordi; Varela del Arco, Maria; Ferain, Etienne; Rodriguez-Carvajal, Juan; Puig, Teresa; Mestres, Narcis; Obradors, Xavier

    2011-01-01

    Porous mixed-valent manganese oxides are a group of multifunctional materials that can be used as molecular sieves, catalysts, battery materials, and gas sensors. However, material properties and thus activity can vary significantly with different synthesis methods or process conditions, such as temperature and time. Here, we report on a new synthesis route for MnO{sub 2} and LaSr-doped molecular sieve single crystalline nanowires based on a solution chemistry methodology combined with the use of nanoporous polymer templates supported on top of single crystalline substrates. Because of the confined nucleation in high aspect ratio nanopores and of the high temperatures attained, new structures with novel physical properties have been produced. During the calcination process, the nucleation and crystallization of {var_epsilon}-MnO{sub 2} nanoparticles with a new hexagonal structure is promoted. These nanoparticles generated up to 30 {mu}m long and flexible hexagonal nanowires at mild growth temperatures (T{sub g} = 700 C) as a consequence of the large crystallographic anisotropy of {var_epsilon}-MnO{sub 2}. The nanocrystallites of MnO{sub 2} formed at low temperatures serve as seeds for the growth of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} nanowires at growth temperatures above 800 C, through the diffusion of La and Sr into the empty 1D-channels of {var_epsilon}-MnO{sub 2}. Our particular growth method has allowed the synthesis of single crystalline molecular sieve (LaSr-2 x 4) monoclinic nanowires with composition La{sub 0.7}Sr{sub 0.3}MnO{sub 3} and with ordered arrangement of La{sup 3+} and Sr{sup 2+} cations inside the 1D-channels. These nanowires exhibit ferromagnetic ordering with strongly enhanced Curie temperature (T{sub c} > 500 K) that probably results from the new crystallographic order and from the mixed valence of manganese.

  19. Carrier transport in nBn infrared detectors

    NASA Astrophysics Data System (ADS)

    Ting, David Z.; Soibel, Alexander; Khoshakhlagh, Arezou; Keo, Sam A.; Hill, Cory J.; Fisher, Anita M.; Luong, Edward M.; Liu, John K.; Mumolo, Jason M.; Rafol, B., , Sir; Pepper, Brian J.; Gunapala, Sarath D.

    2016-09-01

    The nBn photodetector architecture proposed and demonstrated by Maimon and Wicks provides an effective means for lowering generation-recombination dark current by suppressing Shockley-Read-Hall processes, and for reducing surface leakage dark current. This has been especially beneficial for III-V semiconductor based infrared photodiodes, which traditionally tend to suffer from excess depletion dark current and lack of good surface passivation. We examine how contact (n), barrier (B), and absorber (n) properties can affect carrier transport in nBn infrared detector. In an nBn detector the unipolar electron barrier should block only the electrons while allowing the un-impeded flow of holes, but improper barrier doping or barrier-absorber band offset could also block hole transport and result in higher turn-on bias. Contact doping has also been observed to result in higher turn-on bias at higher temperatures. In the case when the absorber is made from n-doped type-II superlattice (T2SL), although it is often assumed that the exceedingly large growth-direction band-edge curvature hole effective mass in n-type long-wavelength infrared (LWIR) T2SL would lead to low hole mobility and therefore low detector collection quantum efficiency, in practice mid-wavelength infrared (MWIR) and LWIR nBn infrared detectors have demonstrated good optical response. We explore how hole mobility can be affected by band structure effects such as band mixing and subband splitting to gain better understanding of hole transport in T2SL.

  20. A simple hydrothermal method for the large-scale synthesis of single-crystal potassium tungsten bronze nanowires.

    PubMed

    Gu, Zhanjun; Ma, Ying; Zhai, Tianyou; Gao, Bifen; Yang, Wensheng; Yao, Jiannian

    2006-10-10

    The large-scale synthesis of single-crystal K(x)WO(3) tungsten bronze nanowires has been successfully realized by a hydrothermal method under mild conditions. Uniform K(0.33)WO(3) nanowires with diameters of 5-25 nm and lengths of up to several micrometers are obtained. It is found that the morphology and crystallographic forms of the final products are strongly dependent on the sulfate and citric acid, which may act as structure-directing and soft-reducing agent, respectively. Some other influential factors on the growth of tungsten bronze nanowires, such as temperature and reaction time, are also discussed. It is worth noting that other alkali metal tungsten bronzes such as (NH(4))(x)WO(3), Rb(x)WO(3), and Cs(x)WO(3) could also be selectively synthesized by a similar route. Thus, this novel and efficient method could provide a potential mild route to selectively synthesize various tungsten bronze on-dimensional nanomaterials.

  1. Effect of phonon focusing on Knudsen flow of phonon gas in single-crystal nanowires made of spintronics materials

    NASA Astrophysics Data System (ADS)

    Kuleev, I. I.; Bakharev, S. M.; Kuleev, I. G.; Ustinov, V. V.

    2017-01-01

    Effect of anisotropy of elastic energy on the phonon propagation in single-crystal nanowires made of Fe, Cu, MgO, InSb, and GaAs materials that are used to fabricate spintronics devices in the regime of the Knudsen flow of phonon gas has been studied. A new method of analyzing the focusing of quasi-transverse modes has been suggested, which made it possible to determine the average values of the densities of phonon states in the regions of focusing and defocusing slow and fast quasi-transverse modes. The effect of phonon focusing on the anisotropy of heat conductivity and lengths of the phonon free paths has been analyzed for all acoustic modes that exist in spintronics nanostructures. It has been shown that for all the nanowires investigated the angular dependences of the free paths of fast and slow transverse modes in the {100} and {110} planes correlate with the angular dependences of the densities of phonon states for these modes. Directions of the heat flux that ensure the maximum and minimum phonon heat conductivity in the nanowires have been determined.

  2. Template-directed synthesis of ordered single-crystalline nanowires arrays of Cu2ZnSnS4 and Cu2ZnSnSe4.

    PubMed

    Shi, Liang; Pei, Congjian; Xu, Yeming; Li, Quan

    2011-07-13

    Highly ordered quaternary semiconductor Cu(2)ZnSnS(4) nanowires array have been prepared via a facile solvothermal approach using anodic aluminum oxide (AAO) as a hard template. The as-prepared nanowires are uniform and single crystalline. They grow along either the crystalline [110] or [111] direction. The structure, morphology, composition, and optical absorption properties of the as-prepared Cu(2)ZnSnS(4) samples were characterized using X-ray powder diffraction, transmission electron microscopy, energy dispersive X-ray spectrometry, scanning electron microscopy, and UV-vis spectrometry. A possible formation mechanism of the nanowire arrays is proposed. Governed by similar mechanism, we show that Cu(2)ZnSnSe(4) nanowire array with similar structural characteristics can also be obtained.

  3. Effect of highly ordered single-crystalline TiO2 nanowire length on the photovoltaic performance of dye-sensitized solar cells.

    PubMed

    Zhou, Zheng-ji; Fan, Jun-qi; Wang, Xia; Zhou, Wen-hui; Du, Zu-liang; Wu, Si-xin

    2011-11-01

    One-dimensional semiconductor nanostructures grown directly onto transparent conducting oxide substrates with a high internal surface area are most desirable for high-efficiency dye-sensitized solar cells (DSSCs). Herein, we present a multicycle hydrothermal synthesis process to produce vertically aligned, single crystal rutile TiO(2) nanowires with different lengths between 1 and 8 μm for application as the working electrode in DSSCs. Optimum performance was obtained with a TiO(2) nanowire length of 2.0 μm, which may be ascribed to a smaller nanowire diameter with a high internal surface area and better optical transmittance with an increase in the incident light intensity on the N719 dye; as well as a firm connection at the FTO/TiO(2) nanowire interface.

  4. InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact.

    PubMed

    Tchernycheva, M; Lavenus, P; Zhang, H; Babichev, A V; Jacopin, G; Shahmohammadi, M; Julien, F H; Ciechonski, R; Vescovi, G; Kryliouk, O

    2014-05-14

    We report on the demonstration of MOVPE-grown single nanowire InGaN/GaN core-shell light emitting diodes (LEDs) with a transparent graphene contact for hole injection. The electrical homogeneity of the graphene-contacted LED has been assessed by electron beam induced current microscopy. By comparing graphene-contacted and metal-contacted nanowire LEDs, we show that the contact layout determines the electroluminescence spectrum. The electroluminescence changes color from green to blue with increasing injection current. High-resolution cathodoluminescence on cleaved nanowires allows the location with high precision of the origin of different emitted wavelengths and demonstrates that the blue peak originates from the emission of the radial quantum well on the m-planes, whereas the green peak arises from the In-rich region at the junction between the m-planes and the semipolar planes. The spectral behavior of the electroluminescence is understood by modeling the current distribution within the nanowire.

  5. Phase separation in single In(x)Ga(1-x)N nanowires revealed through a hard X-ray synchrotron nanoprobe.

    PubMed

    Segura-Ruiz, J; Martínez-Criado, G; Denker, C; Malindretos, J; Rizzi, A

    2014-03-12

    In this work, we report on the composition, short- and long-range structural order of single molecular beam epitaxy grown In(x)Ga(1-x)N nanowires using a hard X-ray synchrotron nanoprobe. Nano-X-ray fluorescence mapping reveals an axial and radial heterogeneous elemental distribution in the single wires with Ga accumulation at their bottom and outer regions. Polarization-dependent nano-X-ray absorption near edge structure demonstrates that despite the elemental modulation, the tetrahedral order around the Ga atoms remains along the nanowires. Nano-X-ray diffraction mapping on single nanowires shows the existence of at least three different phases at their bottom: an In-poor shell and two In-rich phases. The alloy homogenizes toward the top of the wires, where a single In-rich phase is observed. No signatures of In-metallic precipitates are observed in the diffraction spectra. The In-content along the single nanowires estimated from X-ray fluorescence and diffraction data are in good agreement. A rough picture of these phenomena is briefly presented. We anticipate that this methodology will contribute to a greater understanding of the underlying growth concepts not only of nanowires but also of many nanostructures in materials science.

  6. Atomic Migration Induced Crystal Structure Transformation and Core-Centered Phase Transition in Single Crystal Ge2Sb2Te5 Nanowires.

    PubMed

    Lee, Jun-Young; Kim, Jeong-Hyeon; Jeon, Deok-Jin; Han, Jaehyun; Yeo, Jong-Souk

    2016-10-12

    A phase change nanowire holds a promise for nonvolatile memory applications, but its transition mechanism has remained unclear due to the analytical difficulties at atomic resolution. Here we obtain a deeper understanding on the phase transition of a single crystalline Ge2Sb2Te5 nanowire (GST NW) using atomic scale imaging, diffraction, and chemical analysis. Our cross-sectional analysis has shown that the as-grown hexagonal close-packed structure of the single crystal GST NW transforms to a metastable face-centered cubic structure due to the atomic migration to the pre-existing vacancy layers in the hcp structure going through iterative electrical switching. We call this crystal structure transformation "metastabilization", which is also confirmed by the increase of set-resistance during the switching operation. For the set to reset transition between crystalline and amorphous phases, high-resolution imaging indicates that the longitudinal center of the nanowire mainly undergoes phase transition. According to the atomic scale analysis of the GST NW after repeated electrical switching, partial crystallites are distributed around the core-centered amorphous region of the nanowire where atomic migration is mainly induced, thus potentially leading to low power electrical switching. These results provide a novel understanding of phase change nanowires, and can be applied to enhance the design of nanowire phase change memory devices for improved electrical performance.

  7. Single-electron transport in InAs nanowire quantum dots formed by crystal phase engineering

    NASA Astrophysics Data System (ADS)

    Nilsson, Malin; Namazi, Luna; Lehmann, Sebastian; Leijnse, Martin; Dick, Kimberly A.; Thelander, Claes

    2016-05-01

    We report electrical characterization of quantum dots formed by introducing pairs of thin wurtzite (WZ) segments in zinc blende (ZB) InAs nanowires. Regular Coulomb oscillations are observed over a wide gate voltage span, indicating that WZ segments create significant barriers for electron transport. We find a direct correlation of transport properties with quantum dot length and corresponding growth time of the enclosed ZB segment. The correlation is made possible by using a method to extract lengths of nanowire crystal phase segments directly from scanning electron microscopy images, and with support from transmission electron microscope images of typical nanowires. From experiments on controlled filling of nearly empty dots with electrons, up to the point where Coulomb oscillations can no longer be resolved, we estimate a lower bound for the ZB-WZ conduction-band offset of 95 meV.

  8. Ultrafast spectroscopy of quantum confined states in a single CdSe nanowire.

    PubMed

    Schumacher, Thorsten; Giessen, Harald; Lippitz, Markus

    2013-04-10

    We measure for the first time transient absorption spectra of individual CdSe nanowires with about 10 nm diameter. Confinement of the carrier wave functions leads to discrete states which can be described by a six-band effective mass model. Combining transient absorption and luminescence spectroscopy allows us to track the excitation dynamics in the visible and near-infrared spectral range. About 10% of all absorbed photons lead to an excitation of the lowest energy state. Of these excitations, less than 1% lead to a photon in the optical far-field. Almost all emission is reabsorbed by other parts of the nanowire. These findings might explain the low overall quantum efficiency of CdSe nanowires.

  9. Magneto-thermopower and magnetoresistance of single Co-Ni alloy nanowires

    NASA Astrophysics Data System (ADS)

    Böhnert, Tim; Vega, Victor; Michel, Ann-Kathrin; Prida, Victor M.; Nielsch, Kornelius

    2013-08-01

    The magneto-thermopower is measured and correlated to the anisotropic magnetoresistance of Co-Ni alloyed nanowires with varying composition. The highest absolute and relative variation of the Seebeck coefficient in perpendicularly applied magnetic fields at room temperature is determined to be 1.5 μVK-1 for Co0.24Ni0.76 and 8.1% for Co0.39Ni0.61 nanowires. Power factors of 3.7 mW/mK2 have been achieved, which is competitive with common thermoelectric materials like Bi2Te3. For Co-Ni nanowires containing up to 39% Co, a linear relationship between the magnetic field dependent change of the Seebeck coefficient and the electrical conductivity is found.

  10. Anomalous photoconductive behavior of a single InAs nanowire photodetector

    SciTech Connect

    Li, Junshuai; Yan, Xin; Sun, Fukuan; Zhang, Xia Ren, Xiaomin

    2015-12-28

    We report on a bare InAs nanowire photodetector which exhibits an anomalous photoconductive behavior. Under low-power illumination, the current is smaller than the dark current, and monotonously decreases as the excitation power increases. When the excitation power is high enough, the current starts to increase normally. The phenomenon is attributed to different electron mobilities in the “core” and “shell” of a relatively thick nanowire originating from the surface effect, which result in a quickly dropped “core current” and slowly increased “shell current” under illumination.

  11. Germline variants in MRE11/RAD50/NBN complex genes in childhood leukemia

    PubMed Central

    2013-01-01

    Background The MRE11, RAD50, and NBN genes encode proteins of the MRE11-RAD50-NBN (MRN) complex involved in cellular response to DNA damage and the maintenance of genome stability. In our previous study we showed that the germline p.I171V mutation in NBN may be considered as a risk factor in the development of childhood acute lymphoblastic leukemia (ALL) and some specific haplotypes of that gene may be associated with childhood leukemia. These findings raise important questions about the role of mutations in others genes of the MRN complex in childhood leukemia. The aim of this study was to answer the question whether MRE11 and RAD50 alterations may be associated with childhood ALL or AML. Methods We estimated the frequency of constitutional mutations and polymorphisms in selected regions of MRE11, RAD50, and NBN in the group of 220 children diagnosed with childhood leukemias and controls (n=504/2200). The analysis was performed by specific amplification of region of interest by PCR and followed by multi-temperature single-strand conformation polymorphism (PCR-MSSCP) technique. We performed two molecular tests to examine any potential function of the detected the c.551+19G>A SNP in RAD50 gene. To our knowledge, this is the first analysis of the MRE11, RAD50 and NBN genes in childhood leukemia. Results The frequency of either the AA genotype or A allele of RAD50_rs17166050 were significantly different in controls compared to leukemia group (ALL+AML) (p<0.0019 and p<0.0019, respectively). The cDNA analysis of AA or GA genotypes carriers has not revealed evidence of splicing abnormality of RAD50 pre-mRNA. We measured the allelic-specific expression of G and A alleles at c.551+19G>A and the statistically significant overexpression of the G allele has been observed. Additionally we confirmed the higher incidence of the p.I171V mutation in the leukemia group (7/220) than among controls (12/2400) (p<0.0001). Conclusion The formerly reported sequence variants in the RAD50

  12. Structural modulation of nanowire interfaces grown over selectively disrupted single crystal surfaces

    NASA Astrophysics Data System (ADS)

    Garratt, E.; Nikoobakht, B.

    2015-08-01

    Recent breakthroughs in deterministic approaches to the fabrication of nanowire arrays have demonstrated the possibility of fabricating such networks using low-cost scalable methods. In this regard, we have developed a scalable growth platform for lateral fabrication of nanocrystals with high precision utilizing lattice match and symmetry. Using this planar architecture, a number of homo- and heterostructures have been demonstrated including ZnO nanowires grown over GaN. The latter combination produces horizontal, epitaxially formed crystals aligned in the plane of the substrate containing a very low number of intrinsic defects. We use such ordered structures as model systems in the interests of gauging the interfacial structural dynamics in relation to external stimuli. Nanosecond pulses of focused ion beams are used to slightly modify the substrate surface and selectively form lattice disorders in the path of nanowire growth to examine the nanocrystal, namely: its directionality and lattice defects. High resolution electron microscopies are used to reveal some interesting structural effects; for instance, a minimum threshold of surface defects that can divert nanowires. We also discuss data indicating formation of surface strains and show their mitigation during the growth process.

  13. Amorphization and recrystallization of single-crystalline hydrogen titanate nanowires by N{sup +} ion irradiation

    SciTech Connect

    Behera, Akshaya K.; Bandyopadyay, Malay K.; Chatterjee, Shyamal; Facsko, Stefan; Das, Siddhartha

    2014-06-21

    We report on the phase transformation of hydrogen titanate (H{sub 2}Ti{sub 3}O{sub 7}) nanowires induced by 50 keV N{sup +} ion irradiation at room temperature with fluences of 1 × 10{sup 15} ions/cm{sup 2} and 1 × 10{sup 16} ions/cm{sup 2}, respectively. Using transmission electron microscopy, the internal structure of the ion irradiated nanowires is analyzed. At low fluence, a transformation from crystalline H{sub 2}Ti{sub 3}O{sub 7} to amorphous TiO{sub 2} is observed. However, at higher fluence, a remarkable crystalline-amorphous TiO{sub 2} core-shell structure is formed. At this higher fluence, the recrystallization occurs in the core of the nanowire and the outer layer remains amorphous. The phase transformation and formation of core-shell structure are explained using the thermal spike model, radiation enhanced diffusion, and classical theory of nucleation and growth under non-equilibrium thermodynamics. X-ray photoelectron spectroscopy and Raman scattering reveal further insight into the structure of the nanowires before and after ion irradiation.

  14. Orientation-and polarization-dependent optical properties of the single Ag nanowire/glass substrate system excited by the evanescent wave

    PubMed Central

    Yang, Mu; Cai, Wei; Wang, Yingjie; Sun, Mengtao; Shang, Guangyi

    2016-01-01

    As an important plasmon one-dimensional material, orientation- and polarization-dependent properties of single Ag nanowires/glass substrate system are investigated by a powerful platform consisting of evanescent wave excitation, near-/far-field detection and a micromanipulator. In the case of the nanowire perpendicular or parallel to the incident plane and p- ors-polarized evanescent excitation respectively, optical properties of the nanowire is measured both in far-field and near-field. For the perpendicular situation, scattering light from the nanowire shows strong dependence on the polarization of incident light, and period patterns along the nanowire are observed both in the near- and far-field. The chain of dipole model is used to explain the origin of this pattern. The discrepancy of the period patterns observed in the near- and far-field is due to the different resolution of the near- and far-field detection. For the parallel case, light intensity from the output end also depends on the incident polarization. Both experimental and calculation results show that the polarization dependence effect results from the surface plasmon excitation. These results on the orientation- and polarization-dependent properties of the Ag nanowires detected by the combination of near- and far-field methods would be helpful to understand interactions of one-dimensional plasmonic nanostructures with light. PMID:27157123

  15. High-efficiency WSi superconducting nanowire single-photon detectors for quantum state engineering in the near infrared.

    PubMed

    Le Jeannic, Hanna; Verma, Varun B; Cavaillès, Adrien; Marsili, Francesco; Shaw, Matthew D; Huang, Kun; Morin, Olivier; Nam, Sae Woo; Laurat, Julien

    2016-11-15

    We report on high-efficiency superconducting nanowire single-photon detectors based on amorphous tungsten silicide and optimized at 1064 nm. At an operating temperature of 1.8 K, we demonstrated a 93% system detection efficiency at this wavelength with a dark noise of a few counts per second. Combined with cavity-enhanced spontaneous parametric downconversion, this fiber-coupled detector enabled us to generate narrowband single photons with a heralding efficiency greater than 90% and a high spectral brightness of 0.6×104 photons/(s·mW·MHz). Beyond single-photon generation at large rate, such high-efficiency detectors open the path to efficient multiple-photon heralding and complex quantum state engineering.

  16. Single-excitation dual-color coherent lasing by tuning resonance energy transfer processes in porous structured nanowires.

    PubMed

    Wang, Zhaona; Shi, Xiaoyu; Yu, Ruomeng; Wei, Sujun; Chang, Qing; Wang, Yanrong; Liu, Dahe; Wang, Zhong Lin

    2015-10-07

    Single-excitation dual-color coherent lasing was achieved in a mixed random system of a binary dye and the suspension of gold-silver porous nanowires with plenty of nanogaps. This greatly enhanced the local electromagnetic field in the visible range and guaranteed a low threshold and high Q factor (>10 000) operator for simultaneous dual-color lasing. By tuning the resonance energy transfer process in the stimulated emission, triple output modes (single chartreuse lasing, chartreuse and red dual-color lasing, and single red coherent lasing) were easily obtained. This triple-mode coherent random lasing introduces a new approach to designing multi-functional micro-optoelectronic devices for multi-color speckle-free imaging and interference.

  17. Room-temperature triggered single photon emission from a III-nitride site-controlled nanowire quantum dot.

    PubMed

    Holmes, Mark J; Choi, Kihyun; Kako, Satoshi; Arita, Munetaka; Arakawa, Yasuhiko

    2014-02-12

    We demonstrate triggered single photon emission at room temperature from a site-controlled III-nitride quantum dot embedded in a nanowire. Moreover, we reveal a remarkable temperature insensitivity of the single photon statistics, and a g((2))[0] value at 300 K of just 0.13. The combination of using high-quality, small, site-controlled quantum dots with a wide-bandgap material system is crucial for providing both sufficient exciton confinement and an emission spectrum with minimal contamination in order to enable room temperature operation. Arrays of such single photon emitters will be useful for room-temperature quantum information processing applications such as on-chip quantum communication.

  18. High-efficiency WSi superconducting nanowire single-photon detectors for quantum state engineering in the near infrared

    NASA Astrophysics Data System (ADS)

    Le Jeannic, Hanna; Verma, Varun B.; Cavaillès, Adrien; Marsili, Francesco; Shaw, Matthew D.; Huang, Kun; Morin, Olivier; Nam, Sae Woo; Laurat, Julien

    2016-11-01

    We report on high-efficiency superconducting nanowire single-photon detectors based on amorphous WSi and optimized at 1064 nm. At an operating temperature of 1.8 K, we demonstrated a 93% system detection efficiency at this wavelength with a dark noise of a few counts per second. Combined with cavity-enhanced spontaneous parametric down-conversion, this fiber-coupled detector enabled us to generate narrowband single photons with a heralding efficiency greater than 90% and a high spectral brightness of $0.6\\times10^4$ photons/(s$\\cdot$mW$\\cdot$MHz). Beyond single-photon generation at large rate, such high-efficiency detectors open the path to efficient multiple-photon heralding and complex quantum state engineering.

  19. Catalyst patterning for nanowire devices

    NASA Technical Reports Server (NTRS)

    Li, Jun (Inventor); Cassell, Alan M. (Inventor); Han, Jie (Inventor)

    2004-01-01

    Nanowire devices may be provided that are based on carbon nanotubes or single-crystal semiconductor nanowires. The nanowire devices may be formed on a substrate. Catalyst sites may be formed on the substrate. The catalyst sites may be formed using lithography, thin metal layers that form individual catalyst sites when heated, collapsible porous catalyst-filled microscopic spheres, microscopic spheres that serve as masks for catalyst deposition, electrochemical deposition techniques, and catalyst inks. Nanowires may be grown from the catalyst sites.

  20. All Nanowire Integrated Sensor Circuitry

    DTIC Science & Technology

    2008-04-01

    of single crystalline nanomaterials. Highly ordered and parallel arrays of optically active CdSe nanowires and high mobility Ge/Si nanowires are...for enabling the fabrication of the all- nanowire sensor circuitry. First, highly aligned CdSe and Ge/Si NW arrays were assembled at pre-defined...FETs (Tl and T2) amplifying the photoresponse of a CdSe nanosensor. (B) Schematic of the all- nanowire optical sensor circuit based on ordered

  1. nBn Infrared Detector Containing Graded Absorption Layer

    NASA Technical Reports Server (NTRS)

    Gunapala, Sarath D.; Ting, David Z.; Hill, Cory J.; Bandara, Sumith V.

    2009-01-01

    It has been proposed to modify the basic structure of an nBn infrared photodetector so that a plain electron-donor- type (n-type) semiconductor contact layer would be replaced by a graded n-type III V alloy semiconductor layer (i.e., ternary or quarternary) with appropriate doping gradient. The abbreviation nBn refers to one aspect of the unmodified basic device structure: There is an electron-barrier ("B" ) layer between two n-type ("n" ) layers, as shown in the upper part of the figure. One of the n-type layers is the aforementioned photon-absorption layer; the other n-type layer, denoted the contact layer, collects the photocurrent. The basic unmodified device structure utilizes minority-charge-carrier conduction, such that, for reasons too complex to explain within the space available for this article, the dark current at a given temperature can be orders of magnitude lower (and, consequently, signal-to-noise ratios can be greater) than in infrared detectors of other types. Thus, to obtain a given level of performance, less cooling (and, consequently, less cooling equipment and less cooling power) is needed. [In principle, one could obtain the same advantages by means of a structure that would be called pBp because it would include a barrier layer between two electron-acceptor- type (p-type) layers.] The proposed modifications could make it practical to utilize nBn photodetectors in conjunction with readily available, compact thermoelectric coolers in diverse infrared- imaging applications that could include planetary exploration, industrial quality control, monitoring pollution, firefighting, law enforcement, and medical diagnosis.

  2. Size- and structure-dependence of thermal and mechanical behaviors of single-crystalline and polytypic superlattice ZnS nanowires

    SciTech Connect

    Moon, Junghwan; Cho, Maenghyo; Zhou, Min

    2015-06-07

    Molecular dynamics (MD) simulations are carried out to study the thermal and mechanical behaviors of single-crystalline wurtzite (WZ), zinc-blende (ZB), and polytypic superlattice ZnS nanowires containing alternating WZ and ZB regions with thicknesses between 1.85 nm and 29.62 nm under tensile loading. The wires analyzed have diameters between 1.77 nm and 5.05 nm. The Green-Kubo method is used to calculate the thermal conductivity of the wires at different deformed states. A non-equilibrium MD approach is used to analyze the thermal transport behavior at the interfaces between different structural regions in the superlattice nanowires (SLNWs). The Young's modulus and thermal conductivity of ZB nanowires are approximately 2%–12% and 23%–35% lower than those of WZ nanowires, respectively. The lower initial residual compressive stress due to higher irregularity of surface atoms causes the Young's modulus of ZB nanowires to be lower. The dependence of the thermal conductivity on structure comes from differences in phonon group velocities associated with the different wires. The thermal conductivity of polytypic superlattice nanowires is up to 55% lower than that of single-crystalline nanowires, primarily because of phonon scattering at the interfaces and the resulting lower effective phonon mean free paths for each structural region. As the periodic lengths (1.85–29.62 nm) and specimen lengths (14.81–59.24 nm) of SLNWs decrease, these effects become more pronounced, causing the thermal conductivity to further decrease by up to 30%.

  3. Single-crystalline In2S3 nanowire-based flexible visible-light photodetectors with an ultra-high photoresponse.

    PubMed

    Xie, Xuming; Shen, Guozhen

    2015-03-21

    With a band gap of 2.28 eV, In2S3 is an excellent candidate for visible-light sensitive photodetectors. By growing single-crystalline In2S3 nanowires via a simple CVD method, we report the fabrication of high-performance single-crystal In2S3 nanowire-based flexible photodetectors. The as-fabricated flexible photodetectors exhibited an ultra-high Ion/Ioff ratio up to 10(6) and a high sensitivity to visible incident light with responsivity and quantum efficiency as high as 7.35 × 10(4) A W(-1) and 2.28 × 10(7)%, respectively. Besides, the flexible photodetectors were demonstrated to possess a robust flexibility and excellent stability. With these favorable merits, In2S3 nanowires are believed to have a promising future in the application of high performance and flexible integrated optoelectronic devices.

  4. Intense intrashell luminescence of Eu-doped single ZnO nanowires at room temperature by implantation created Eu-Oi complexes.

    PubMed

    Geburt, Sebastian; Lorke, Michael; da Rosa, Andreia L; Frauenheim, Thomas; Röder, Robert; Voss, Tobias; Kaiser, Uwe; Heimbrodt, Wolfram; Ronning, Carsten

    2014-08-13

    Successful doping and excellent optical activation of Eu(3+) ions in ZnO nanowires were achieved by ion implantation. We identified and assigned the origin of the intra-4f luminescence of Eu(3+) ions in ZnO by first-principles calculations to Eu-Oi complexes, which are formed during the nonequilibrium ion implantation process and subsequent annealing at 700 °C in air. Our targeted defect engineering resulted in intense intrashell luminescence of single ZnO:Eu nanowires dominating the photoluminescence spectrum even at room temperature. The high intensity enabled us to study the luminescence of single ZnO nanowires in detail, their behavior as a function of excitation power, waveguiding properties, and the decay time of the transition.

  5. Maximizing integrated optical and electrical properties of a single ZnO nanowire through native interfacial doping.

    PubMed

    Ding, Huaiyi; Pan, Nan; Ma, Chao; Wu, Yukun; Li, Junwen; Cai, Hongbing; Zhang, Kun; Zhang, Guanghui; Ren, Wenzhen; Li, Jianqi; Luo, Yi; Wang, Xiaoping; Hou, J G

    2014-05-21

    A native interfacial doping layer introduced in core-shell type ZnO nano-wires by a simple vapor phase re-growth procedure endows the produced nano-wires with both excellent electrical and optical performances compared to conventional homogeneous ZnO nanowires. The unique Zn-rich interfacial structure in the core-shell nanowires plays a crucial role in the outstanding performances.

  6. Luminescence and electrical properties of single ZnO/MgO core/shell nanowires

    SciTech Connect

    Grinblat, Gustavo; Comedi, David; Bern, Francis; Barzola-Quiquia, José; Esquinazi, Pablo; Tirado, Mónica

    2014-03-10

    To neutralise the influence of the surface of ZnO nanowires for photonics and optoelectronic applications, we have covered them with insulating MgO film and individually contacted them for electrical characterisation. We show that such a metal-insulator-semiconductor-type nanodevice exhibits a high diode ideality factor of 3.4 below 1 V. MgO shell passivates ZnO surface states and provides confining barriers to electrons and holes within the ZnO core, favouring excitonic ultraviolet radiative recombination, while suppressing defect-related luminescence in the visible and improving electrical conductivity. The results indicate the potential use of ZnO/MgO nanowires as a convenient building block for nano-optoelectronic devices.

  7. Room-temperature near-infrared photodetectors based on single heterojunction nanowires.

    PubMed

    Ma, Liang; Hu, Wei; Zhang, Qinglin; Ren, Pinyun; Zhuang, Xiujuan; Zhou, Hong; Xu, Jinyou; Li, Honglai; Shan, Zhengping; Wang, Xiaoxia; Liao, Lei; Xu, H Q; Pan, Anlian

    2014-02-12

    Nanoscale near-infrared photodetectors are attractive for their potential applications in integrated optoelectronic devices. Here we report the synthesis of GaSb/GaInSb p-n heterojunction semiconductor nanowires for the first time through a controllable chemical vapor deposition (CVD) route. Based on these nanowires, room-temperature, high-performance, near-infrared photodetectors were constructed. The fabricated devices show excellent light response in the infrared optical communication region (1.55 μm), with an external quantum efficiency of 10(4), a responsivity of 10(3) A/W, and a short response time of 2 ms, which shows promising potential applications in integrated photonics and optoelectronics devices or systems.

  8. Highly efficient biocompatible single silicon nanowire electrodes with functional biological pore channels.

    PubMed

    Martinez, Julio A; Misra, Nipun; Wang, Yinmin; Stroeve, Pieter; Grigoropoulos, Costas P; Noy, Aleksandr

    2009-03-01

    Nanoscale electrodes based on one-dimensional inorganic conductors could possess significant advantages for electrochemical measurements over their macroscopic counterparts in a variety of electrochemical applications. We show that the efficiency of the electrodes constructed of individual highly doped silicon nanowires greatly exceeds the efficiency of flat Si electrodes. Modification of the surfaces of the nanowire electrodes with phospholipid bilayers produces an efficient biocompatible barrier to transport of the solution redox species to the nanoelectrode surface. Incorporating functional alpha-hemolysin protein pores in the lipid bilayer results in a partial recovery of the Faradic current due to the specific transport through the protein pore. These assemblies represent a robust and versatile platform for building a new generation of highly specific biosensors and nano/bioelectronic devices.

  9. Super-resolution imaging of light-matter interactions near single semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Johlin, Eric; Solari, Jacopo; Mann, Sander A.; Wang, Jia; Shimizu, Thomas S.; Garnett, Erik C.

    2016-12-01

    Nanophotonics is becoming invaluable for an expanding range of applications, from controlling the spontaneous emission rate and the directionality of quantum emitters, to reducing material requirements of solar cells by an order of magnitude. These effects are highly dependent on the near field of the nanostructure, which constitutes the evanescent fields from propagating and resonant localized modes. Although the interactions between quantum emitters and nanophotonic structures are increasingly well understood theoretically, directly imaging these interactions experimentally remains challenging. Here we demonstrate a photoactivated localization microscopy-based technique to image emitter-nanostructure interactions. For a 75 nm diameter silicon nanowire, we directly observe a confluence of emission rate enhancement, directivity modification and guided mode excitation, with strong interaction at scales up to 13 times the nanowire diameter. Furthermore, through analytical modelling we distinguish the relative contribution of these effects, as well as their dependence on emitter orientation.

  10. Super-resolution imaging of light–matter interactions near single semiconductor nanowires

    PubMed Central

    Johlin, Eric; Solari, Jacopo; Mann, Sander A.; Wang, Jia; Shimizu, Thomas S.; Garnett, Erik C.

    2016-01-01

    Nanophotonics is becoming invaluable for an expanding range of applications, from controlling the spontaneous emission rate and the directionality of quantum emitters, to reducing material requirements of solar cells by an order of magnitude. These effects are highly dependent on the near field of the nanostructure, which constitutes the evanescent fields from propagating and resonant localized modes. Although the interactions between quantum emitters and nanophotonic structures are increasingly well understood theoretically, directly imaging these interactions experimentally remains challenging. Here we demonstrate a photoactivated localization microscopy-based technique to image emitter-nanostructure interactions. For a 75 nm diameter silicon nanowire, we directly observe a confluence of emission rate enhancement, directivity modification and guided mode excitation, with strong interaction at scales up to 13 times the nanowire diameter. Furthermore, through analytical modelling we distinguish the relative contribution of these effects, as well as their dependence on emitter orientation. PMID:27996010

  11. Fabrication Development for Nanowire GHz-Counting-Rate Single-Photon Detectors

    DTIC Science & Technology

    2005-06-01

    without PEC had a higher variation in linewidths: the largest variation between any two measurements was 15 nm. Fig. 2(d) shows a plot of the linewidth...portion of the meander pattern written with PEC showing uniform 90 nm wide lines with smooth line edges formed in HSQ. (d) Plot of measured widths at...Kelvin-resistor test structure used to evaluate superconductivity of nanowires. (c) Normalized resistance vs. temperature plots showing the

  12. UV radiation and CH4 gas detection with a single ZnO:Pd nanowire

    NASA Astrophysics Data System (ADS)

    Lupan, O.; Adelung, R.; Postica, V.; Ababii, N.; Chow, L.; Viana, B.; Pauporté, T.

    2017-02-01

    There is an increasing demand for sensors to monitor environmental levels of ultraviolet (UV) radiation and pollutant gases. In this work, an individual nanowire of Pd modified ZnO nanowire (ZnO:Pd NW) was integrated in a nanosensor device for efficient and fast detection of UV light and CH4 gas at room temperature. Crystalline ZnO:Pd nanowire/nanorod arrays were synthesized onto fluorine doped tin oxide (FTO) substrates by electrochemical deposition (ECD) at relative low-temperatures (90 °C) with different concentrations of PdCl2 in electrolyte solution and investigated by SEM and EDX. Nanodevices were fabricated using dual beam focused electron/ion beam (FIB/SEM) system and showed improved UV radiation response compared to pristine ZnO NW, reported previously by our group. The UV response was increased by one order in magnitude (≈ 11) for ZnO:Pd NW. Gas sensing measurements demonstrated a higher gas response and rapidity to methane (CH4 gas, 100 ppm) at room temperature, showing promising results for multifunctional applications. Also, due to miniature size and ultra-low power consumption of these sensors, it is possible to integrate them into portable devices easily, such as smartphones, digital clock, flame detection, missile lunching and other smart devices.

  13. Single crystalline cylindrical nanowires – toward dense 3D arrays of magnetic vortices

    PubMed Central

    Ivanov, Yurii P.; Chuvilin, Andrey; Vivas, Laura G.; Kosel, Jurgen; Chubykalo-Fesenko, Oksana; Vázquez, Manuel

    2016-01-01

    Magnetic vortex-based media have recently been proposed for several applications of nanotechnology; however, because lithography is typically used for their preparation, their low-cost, large-scale fabrication is a challenge. One solution may be to use arrays of densely packed cobalt nanowires that have been efficiently fabricated by electrodeposition. In this work, we present this type of nanoscale magnetic structures that can hold multiple stable magnetic vortex domains at remanence with different chiralities. The stable vortex state is observed in arrays of monocrystalline cobalt nanowires with diameters as small as 45 nm and lengths longer than 200 nm with vanishing magnetic cross talk between closely packed neighboring wires in the array. Lorentz microscopy, electron holography and magnetic force microscopy, supported by micromagnetic simulations, show that the structure of the vortex state can be adjusted by varying the aspect ratio of the nanowires. The data we present here introduce a route toward the concept of 3-dimensional vortex-based magnetic memories. PMID:27030143

  14. Single crystalline cylindrical nanowires - toward dense 3D arrays of magnetic vortices

    NASA Astrophysics Data System (ADS)

    Ivanov, Yurii P.; Chuvilin, Andrey; Vivas, Laura G.; Kosel, Jurgen; Chubykalo-Fesenko, Oksana; Vázquez, Manuel

    2016-03-01

    Magnetic vortex-based media have recently been proposed for several applications of nanotechnology; however, because lithography is typically used for their preparation, their low-cost, large-scale fabrication is a challenge. One solution may be to use arrays of densely packed cobalt nanowires that have been efficiently fabricated by electrodeposition. In this work, we present this type of nanoscale magnetic structures that can hold multiple stable magnetic vortex domains at remanence with different chiralities. The stable vortex state is observed in arrays of monocrystalline cobalt nanowires with diameters as small as 45 nm and lengths longer than 200 nm with vanishing magnetic cross talk between closely packed neighboring wires in the array. Lorentz microscopy, electron holography and magnetic force microscopy, supported by micromagnetic simulations, show that the structure of the vortex state can be adjusted by varying the aspect ratio of the nanowires. The data we present here introduce a route toward the concept of 3-dimensional vortex-based magnetic memories.

  15. Long single ZnO nanowire for logic and memory circuits: NOT, NAND, NOR gate, and SRAM.

    PubMed

    Lee, Young Tack; Ali Raza, Syed Raza; Jeon, Pyo Jin; Ha, Ryong; Choi, Heon-Jin; Im, Seongil

    2013-05-21

    We demonstrate logic and static random access memory (SRAM) circuits using a 100 μm long and 100 nm thin single ZnO nanowire (NW), which acts as a channel of field-effect transistors (FETs) with Al2O3 dielectrics. NW FETs are thus arrayed in one dimension to consist of NOT, NAND, and NOR gate logic, and SRAM circuits. Two respective top-gate NW FETs with Au and indium-tin-oxide (ITO) were connected to form an inverter, the basic NOT gate component, since the former gate leads to an enhanced mode FET while the latter to depletion mode due to their work function difference. Our inverters showed a high voltage gain of 22 under a 5 V operational voltage, resulting in successful operation of all other devices. We thus conclude that our long single NW approach is quite promising to extend the field of nano-electronics.

  16. Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams.

    PubMed

    Bussone, Genziana; Schott, Rüdiger; Biermanns, Andreas; Davydok, Anton; Reuter, Dirk; Carbone, Gerardina; Schülli, Tobias U; Wieck, Andreas D; Pietsch, Ullrich

    2013-08-01

    Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in combination with a nanofocused X-ray beam allows the in-plane lattice parameter of single NWs to be probed, which is not possible for randomly grown NWs. Reciprocal space maps were collected at different heights along the NW to investigate the crystal structure. Simultaneously, substrate areas with different distances from the Au-implantation spots below the NWs were probed. Around the NWs, the data revealed a 0.4% decrease in the lattice spacing in the substrate compared with the expected unstrained value. This suggests the presence of a compressed region due to Au implantation.

  17. Fluorescence signals of core-shell quantum dots enhanced by single crystalline gold caps on silicon nanowires

    NASA Astrophysics Data System (ADS)

    Christiansen, S. H.; Chou, J. W.; Becker, M.; Sivakov, V.; Ehrhold, K.; Berger, A.; Chou, W. C.; Chuu, D. S.; Gösele, U.

    2009-04-01

    We use nanoscale (20-300 nm in diameter) single crystalline gold (Au)-caps on silicon nanowires (NWs) grown by the vapor-liquid-solid (VLS) growth mechanism to enhance the fluorescence photoluminescence (PL) signals of highly dilute core/shell CdSeTe/ZnS quantum dots (QDs) in aqueous solution (10-5 M). For NWs without Au-caps, as they appear, for example, after Au etching in aqua regia or buffered KI/I2-solution, essentially no fluorescence signal of the same diluted QDs could be observed. Fluorescence PL signals were measured using excitation with a laser wavelength of 633 nm. The signal enhancement by single crystalline, nanoscale Au-caps is discussed and interpreted based on finite element modeling (FEM).

  18. Polarization properties of single and ensembles of InAs/InP quantum rod nanowires emitting in the telecom wavelengths

    NASA Astrophysics Data System (ADS)

    Anufriev, R.; Chauvin, N.; Khmissi, H.; Naji, K.; Barakat, J.-B.; Penuelas, J.; Patriarche, G.; Gendry, M.; Bru-Chevallier, C.

    2013-05-01

    The absorption and emission polarization properties of InAs quantum rods embedded in InP nanowires (NWs) are investigated by mean of (micro-)photoluminescence spectroscopy. It is shown that the degree of linear polarization of emission (0.94) and absorption (0.5) of a single NW can be explained by the photonic nature of the NW structure. Knowing these parameters, optical properties of single NWs and ordered ensembles of these NWs can be correlated one to another via proposed model, so that polarization properties of NWs can be studied using ordered ensembles on as-grown samples. As an example, the polarization anisotropy is investigated as a function of the excitation wavelength on a NW ensemble and found to be in agreement with theoretical prediction.

  19. Transparent metal oxide nanowire transistors

    NASA Astrophysics Data System (ADS)

    Chen, Di; Liu, Zhe; Liang, Bo; Wang, Xianfu; Shen, Guozhen

    2012-05-01

    With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive review of the state-of-the-art research activities that focus on transparent metal oxide nanowire transistors. It begins with the brief introduction to the synthetic methods for high quality metal oxide nanowires, and the typical nanowire transfer and printing techniques with emphasis on the simple contact printing methodology. High performance transparent transistors built on both single nanowires and nanowire thin films are then highlighted. The final section deals with the applications of transparent metal oxide nanowire transistors in the field of transparent displays and concludes with an outlook on the current perspectives and future directions of transparent metal oxide nanowire transistors.

  20. Transparent metal oxide nanowire transistors.

    PubMed

    Chen, Di; Liu, Zhe; Liang, Bo; Wang, Xianfu; Shen, Guozhen

    2012-05-21

    With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive review of the state-of-the-art research activities that focus on transparent metal oxide nanowire transistors. It begins with the brief introduction to the synthetic methods for high quality metal oxide nanowires, and the typical nanowire transfer and printing techniques with emphasis on the simple contact printing methodology. High performance transparent transistors built on both single nanowires and nanowire thin films are then highlighted. The final section deals with the applications of transparent metal oxide nanowire transistors in the field of transparent displays and concludes with an outlook on the current perspectives and future directions of transparent metal oxide nanowire transistors.

  1. Investigation on hydrogenation performance of Mg2Ni+10 wt.% NbN composite

    NASA Astrophysics Data System (ADS)

    Zhao, Xin; Han, Shumin; Zhu, Yi; Chen, Xiaocui; Ke, Dandan; Wang, Zhibin; Liu, Ting; Ma, Yufei

    2015-01-01

    The Mg2Ni+10 wt.% NbN composite was prepared by mechanical milling and its hydrogen absorption/desorption properties and microstructure were systematically investigated. XRD results indicated that NbN was stable during ball milling process while partly decomposed into NbN0.95 and NbH during hydriding/dehydriding cycles irreversibly. The composite exhibited excellent hydrogenation/dehydrogenation kinetics performance with 2.71 wt.% hydrogen absorbed in 60 s at 423 K and 0.81 wt.% hydrogen released in 2 h at 523 K, respectively. The H diffusion constant of the composite reached 14.98×10-5 s-1 which was more than twice increased than that of pure Mg2Ni powder. The superior hydrogen storage properties of the composite were ascribed to the refined grain size and abundant N-defect points provided by NbN and NbN0.95 in the composite.

  2. Electrically Robust Metal Nanowire Network Formation by In-Situ Interconnection with Single-Walled Carbon Nanotubes

    PubMed Central

    Woo, Jong Seok; Han, Joong Tark; Jung, Sunshin; Jang, Jeong In; Kim, Ho Young; Jeong, Hee Jin; Jeong, Seung Yol; Baeg, Kang-Jun; Lee, Geon-Woong

    2014-01-01

    Modulation of the junction resistance between metallic nanowires is a crucial factor for high performance of the network-structured conducting film. Here, we show that under current flow, silver nanowire (AgNW) network films can be stabilised by minimizing the Joule heating at the NW-NW junction assisted by in-situ interconnection with a small amount (less than 3 wt%) of single-walled carbon nanotubes (SWCNTs). This was achieved by direct deposition of AgNW suspension containing SWCNTs functionalised with quadruple hydrogen bonding moieties excluding dispersant molecules. The electrical stabilisation mechanism of AgNW networks involves the modulation of the electrical transportation pathway by the SWCNTs through the SWCNT-AgNW junctions, which results in a relatively lower junction resistance than the NW-NW junction in the network film. In addition, we propose that good contact and Fermi level matching between AgNWs and modified SWCNTs lead to the modulation of the current pathway. The SWCNT-induced stabilisation of the AgNW networks was also demonstrated by irradiating the film with microwaves. The development of the high-throughput fabrication technology provides a robust and scalable strategy for realizing high-performance flexible transparent conductor films. PMID:24763208

  3. Atomistic simulations on the axial nanowelding configuration and contact behavior between Ag nanowire and single-walled carbon nanotubes

    NASA Astrophysics Data System (ADS)

    Cui, Jianlei; Zhang, Jianwei; He, Xiaoqiao; Yang, Xinjun; Mei, Xuesong; Wang, Wenjun; Jiang, Gedong; Wang, Kedian; Yang, Lijun; Xie, Hui

    2017-03-01

    As for the interesting new building blocks, the Ag nanowires (AgNWs) and single-walled carbon nanotubes (SWNTs) as the interesting new building blocks are viewed as the promising candidates for the next-generation interconnects due to their most remarkable electrical, thermal, optical, mechanical, and other properties. The axial nanowelding of head-to-head style and side-to-side style is relatively simulated with the molecular dynamics method. As for the head-to-head structural style, SWNTs will move toward the AgNWs and contact with the head of AgNWs. And, the part of the Ag nanowire may be subsequently encapsulated in SWNT with the core-filling Ag atom chain as the final atomic contact configuration during nanowelding, which is related to the nanowelding temperature. When the SWNTs and AgNWs are arranged by the side-to-side contact style, the SWNTs will move along the SWNT surface and may eventually catch up with the AgNW being neck and neck. Aiming at the final axial atomic configurations and the contact behavior during nanowelding process, the related dominant mechanism is revealed in this paper.

  4. Rapid Real-time Electrical Detection of Proteins Using Single Conducting Polymer Nanowire-Based Microfluidic Aptasensor

    PubMed Central

    Huang, Jiyong; Luo, Xiliang; Lee, Innam; Hu, Yushi; Cui, Xinyan Tracy; Yun, Minhee

    2011-01-01

    Single polypyrrole (PPy) nanowire-based microfluidic aptasensors were fabricated using a one-step electrochemical deposition method. The successful incorporation of the aptamers into the PPy nanowire was confirmed by fluorescence microscopy image. The microfluidic aptasensor showed responses to IgE protein solutions in the range from 0.01 nM to 100 nM, and demonstrated excellent specificity and sensitivity with faster response and rapid stabilization times (~20 s). At the lowest examined IgE concentration of 0.01nM, the microfluidic aptasensor still exhibited ~0.32% change in the conductance. The functionality of this aptasensor was able to be regenerated using an acid treatment with no major change in sensitivity. In addition, the detection of cancer biomarker MUC1 was performed using another microfluidic aptasensor, which showed a very low detection limit of 2.66 nM MUC1 compared to commercially available MUC1 diagnosis assay (800 nM). PMID:21937215

  5. The influence of covering a germanium nanowire with a single wall carbon nanotube on mechanical properties: A molecular dynamics study

    NASA Astrophysics Data System (ADS)

    Abdollahi, M.; Davoodi, J.

    2017-07-01

    Semiconductor nanowires are potential candidates for applications in quantum information processing, Josephson junctions, and field-effect transistors. Therefore, this study focused on the effects of covering a germanium nanowire (GeNW) with a single wall carbon nanotube (CNT) on the stress-strain diagram, failure points, and Young's modulus using molecular dynamics simulations. To describe the interactions between atoms in the system, we used Tersoff potential. Also, a Nose-Hoover thermostat was employed to control temperature of the system. The stress-strain curves of GeNW and GeNW inside CNT (CNT-GeNW) were obtained at various temperatures, radii, and strain velocities. It was found that coverage of GeNW with CNT led to 2-6 fold improved Young's modulus. It was also determined that a significant part of the Young's modulus in CNT-GeNW is due to the presence of CNT. Moreover, we defined the behavior of Young's modulus of GeNW as well as CNT-GeNW in the [100], [110], and [111] crystallography direction and found that Young's modulus decreased with increasing temperature. In addition, by increasing strain velocity, Young's modulus decreased for GeNW but increased for CNT-GeNW. Finally, we observed that when a GeNW is covered by a CNT, its failure point increased as compared with GeNW.

  6. Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: formation kinetics

    PubMed Central

    2011-01-01

    In this paper, we investigate the formation kinetics of Si nanowires [SiNWs] on lithographically defined areas using a single-step metal-assisted chemical etching process in an aqueous HF/AgNO3 solution. We show that the etch rate of Si, and consequently, the SiNW length, is much higher on the lithographically defined areas compared with that on the non-patterned areas. A comparative study of the etch rate in the two cases under the same experimental conditions showed that this effect is much more pronounced at the beginning of the etching process. Moreover, it was found that in both cases, the nanowire formation rate is linear with temperature in the range from 20°C to 50°C, with almost the same activation energy, as obtained from an Arrhenius plot (0.37 eV in the case of non-patterned areas, while 0.38 eV in the case of lithographically patterned areas). The higher etch rate on lithographically defined areas is mainly attributed to Si surface modification during the photolithographic process. PACS: 68; 68.65-k. PMID:22087735

  7. A light-driven supramolecular nanowire actuator.

    PubMed

    Lee, Junho; Oh, Seungwhan; Pyo, Jaeyeon; Kim, Jong-Man; Je, Jung Ho

    2015-04-21

    A single photomechanical supramolecular nanowire actuator with an azobenzene-containing 1,3,5-tricarboxamide derivative is developed by employing a direct writing method. Single nanowires display photoinduced reversible bending and the bending behavior follows first-order kinetics associated with azobenzene photoisomerization. A wireless photomechanical nanowire tweezers that remotely manipulates a single micro-particle is also demonstrated.

  8. Electron transport and recombination in dye-sensitized solar cells made from single-crystal rutile TiO2 nanowires.

    PubMed

    Enache-Pommer, Emil; Liu, Bin; Aydil, Eray S

    2009-11-14

    Contrary to expectations, the electron transport rate in dye-sensitized solar cells made from single-crystal rutile titanium dioxide nanowires is found to be similar to that measured in dye-sensitized solar cells made from titanium dioxide nanoparticles.

  9. Rapid charge transport in dye-sensitized solar cells made from vertically aligned single-crystal rutile TiO(2) nanowires.

    PubMed

    Feng, Xinjian; Zhu, Kai; Frank, Arthur J; Grimes, Craig A; Mallouk, Thomas E

    2012-03-12

    A rapid solvothermal approach was used to synthesize aligned 1D single-crystal rutile TiO(2) nanowire (NW) arrays on transparent conducting substrates as electrodes for dye-sensitized solar cells. The NW arrays showed a more than 200 times faster charge transport and a factor four lower defect state density than conventional rutile nanoparticle films.

  10. Rapid Charge Transport in Dye-Sensitized Solar Cells Made from Vertically Aligned Single-Crystal Rutile TiO2 Nanowires

    SciTech Connect

    Feng, X.; Zhu, K.; Frank, A. J.; Grimes, C. A.; Mallouk, T. E.

    2012-03-12

    A rapid solvothermal approach was used to synthesize aligned 1D single-crystal rutile TiO2 nanowire (NW) arrays on transparent conducting substrates as electrodes for dye-sensitized solar cells. The NW arrays showed a more than 200 times faster charge transport (see picture) and a factor four lower defect state density than conventional rutile nanoparticle films.

  11. Ambient Large-Scale Template-Mediated Synthesis of High-Aspect Ratio Single-Crystalline, Chemically Doped Rare-Earth Phosphate Nanowires for Bioimaging

    SciTech Connect

    Zhang, F.; Wong, S.

    2009-12-30

    A simple and effective template-mediated protocol has been developed for the large-scale, room-temperature preparation of high-aspect-ratio, single-crystalline Tb-doped CePO{sub 4} nanowires, measuring {approx}12 nm in diameter and over 10 {mu}m in length. Moreover, we also isolated sheaf-like bundles of nanostructures. The synthesis mechanism likely involved a crystal splitting step. The resulting nanowires demonstrated an intense redox-sensitive green photoluminescence, which was exploited, in addition to their inherently high biocompatibility and low toxicity, for potential applications in biological imaging and labeling of cells.

  12. Growth of aligned single-crystalline rutile TiO2 nanowires on arbitrary substrates and their application in dye-sensitized solar cells

    SciTech Connect

    Kumar, Akshay; Madaria, Anuj R.; Zhou, Chongwu

    2010-05-06

    TiO{sub 2} is a wide band gap semiconductor with important applications in photovoltaic cells and photocatalysis. In this paper, we report synthesis of single-crystalline rutile phase TiO{sub 2} nanowires on arbitrary substrates, including fluorine-doped tin oxide (FTO), glass slides, tin-doped indium oxide (ITO), Si/SiO{sub 2}, Si(100), Si(111), and glass rods. By controlling the growth parameters such as growth temperature, precursor concentrations, and so forth, we demonstrate that anisotropic growth of TiO{sub 2} is possible leading to various morphologies of nanowires. Optimization of the growth recipe leads to well-aligned vertical array of TiO{sub 2} nanowires on both FTO and glass substrates. Effects of various titanium precursors on the growth kinetics, especially on the growth rate of nanowires, are also studied. Finally, application of vertical array of TiO{sub 2} nanowires on FTO as the photoanode is demonstrated in dye-sensitized solar cell with an efficiency of 2.9 ± 0.2%.

  13. Highly Ordered Single Crystalline Nanowire Array Assembled Three-Dimensional Nb3O7(OH) and Nb2O5 Superstructures for Energy Storage and Conversion Applications.

    PubMed

    Zhang, Haimin; Wang, Yun; Liu, Porun; Chou, Shu Lei; Wang, Jia Zhao; Liu, Hongwei; Wang, Guozhong; Zhao, Huijun

    2016-01-26

    Three-dimensional (3D) metal oxide superstructures have demonstrated great potentials for structure-dependent energy storage and conversion applications. Here, we reported a facile hydrothermal method for direct growth of highly ordered single crystalline nanowire array assembled 3D orthorhombic Nb3O7(OH) superstructures and their subsequent thermal transformation into monoclinic Nb2O5 with well preserved 3D nanowire superstructures. The performance of resultant 3D Nb3O7(OH) and Nb2O5 superstructures differed remarkably when used for energy conversion and storage applications. The thermally converted Nb2O5 superstructures as anode material of lithium-ion batteries (LiBs) showed higher capacity and excellent cycling stability compared to the Nb3O7(OH) superstructures, while directly hydrothermal grown Nb3O7(OH) nanowire superstructure film on FTO substrate as photoanode of dye-sensitized solar cells (DSSCs) without the need for further calcination exhibited an overall light conversion efficiency of 6.38%, higher than that (5.87%) of DSSCs made from the thermally converted Nb2O5 film. The high energy application performance of the niobium-based nanowire superstructures with different chemical compositions can be attributed to their large surface area, superior electron transport property, and high light utilization efficiency resulting from a 3D superstructure, high crystallinity, and large sizes. The formation process of 3D nanowire superstructures before and after thermal treatment was investigated and discussed based on our theoretical and experimental results.

  14. Evanescent-wave pumped room-temperature single-mode GaAs/AlGaAs core-shell nanowire lasers

    SciTech Connect

    Wei, Wei; Zhang, Xia Ren, Xiaomin; Liu, Yange Wang, Zhi

    2014-06-02

    Evanescent-wave pumped room-temperature single-mode GaAs/AlGaAs core-shell nanowire lasers are proposed and demonstrated. The nanowires are axially excited by evanescent wave outside a microfiber with a diameter about 10 μm via a ns-pulse laser. The lasing emission with a low effective threshold less than 90 nJ is achieved at 868.62 nm along with a linewidth of ∼1.8 nm. Moreover, multiple lasing lines in a wavelength range from 852.56 nm to 882.48 nm are observed. The mechanism of diverse lasing wavelengths is revealed. Furthermore, the proposed GaAs/AlGaAs nanowire laser has advantages such as simple structure, easy to operate, and controllable lasing wavelength, tending to be practical in optical communications and integrated photonic circuits.

  15. ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells.

    PubMed

    Hu, Qichang; Li, Yafeng; Huang, Feng; Zhang, Zhaojun; Ding, Kai; Wei, Mingdeng; Lin, Zhang

    2015-06-23

    High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate.

  16. ZnO nanowires array grown on Ga-doped ZnO single crystal for dye-sensitized solar cells

    PubMed Central

    Hu, Qichang; Li, Yafeng; Huang, Feng; Zhang, Zhaojun; Ding, Kai; Wei, Mingdeng; Lin, Zhang

    2015-01-01

    High quality ZnO nanowires arrays were homoepitaxial grown on Ga-doped ZnO single crystal (GZOSC), which have the advantages of high conductivity, high carrier mobility and high thermal stability. When it was employed as a photoanode in the DSSCs, the cell exhibited a 1.44% power-conversion efficiency under the illumination of one sun (AM 1.5G). The performance is superior to our ZnO nanowires/FTO based DSSCs under the same condition. This enhanced performance is mainly attributed to the perfect interface between the ZnO nanowires and the GZOSC substrate that contributes to lower carrier scattering and recombination rates compared with that grown on traditional FTO substrate. PMID:26099568

  17. Study on limiting efficiencies of a-Si:H/μc-Si:H-based single-nanowire solar cells under single and tandem junction configurations

    NASA Astrophysics Data System (ADS)

    Zhai, Xiongfei; Cao, Guoyang; Wu, Shaolong; Shang, Aixue; Li, Xiaofeng

    2015-11-01

    Detailed balance calculations are presented for a-Si:H/μc-Si:H-based single- and tandem-junction single-nanowire solar cells (S- and T-SNSCs). Our study is based on three-dimensional finite-element electromagnetic simulation and thermodynamic balanced analysis, which includes radiative and Auger recombinations simultaneously. We quantify and compare the limiting short-circuit current densities, open-circuit voltages, and light-conversion efficiencies of these highly compact photovoltaic cells, addressing especially the effect of Auger recombination on the open-circuit voltages of SNSCs. Results show that tandem design leads to much higher light-conversion capability than μc-Si:H S-SNSCs, but exhibits superior performance than a-Si:H S-SNSCs only for cells with large radii.

  18. Study on limiting efficiencies of a-Si:H/μc-Si:H-based single-nanowire solar cells under single and tandem junction configurations

    SciTech Connect

    Zhai, Xiongfei; Cao, Guoyang; Wu, Shaolong E-mail: xfli@suda.edu.cn; Shang, Aixue; Li, Xiaofeng E-mail: xfli@suda.edu.cn

    2015-11-02

    Detailed balance calculations are presented for a-Si:H/μc-Si:H-based single- and tandem-junction single-nanowire solar cells (S- and T-SNSCs). Our study is based on three-dimensional finite-element electromagnetic simulation and thermodynamic balanced analysis, which includes radiative and Auger recombinations simultaneously. We quantify and compare the limiting short-circuit current densities, open-circuit voltages, and light-conversion efficiencies of these highly compact photovoltaic cells, addressing especially the effect of Auger recombination on the open-circuit voltages of SNSCs. Results show that tandem design leads to much higher light-conversion capability than μc-Si:H S-SNSCs, but exhibits superior performance than a-Si:H S-SNSCs only for cells with large radii.

  19. Polarization Dependence of Surface Enhanced Raman Scattering on a Single Dielectric Nanowire

    DTIC Science & Technology

    2012-01-01

    no. 8, pp. 2497–2502, 2008. [10] B. J. Wiley, Y. Chen, J. M. McLellan et al., “ Synthesis and optical properties of silver nanobars and nanorice,” Nano...original work is properly cited. Our measurements of surface enhanced Raman scattering (SERS) on Ga2O3 dielectric nanowires (NWs) core/ silver composites...process has been widely discussed [15–21]. In this work, a highly effective SERS composite of dielectric Ga2O3 NWs core/ silver was employed to investigate

  20. A review of III–V nanowire infrared photodetectors and sensors

    NASA Astrophysics Data System (ADS)

    LaPierre, R. R.; Robson, M.; Azizur-Rahman, K. M.; Kuyanov, P.

    2017-03-01

    A review of III–V nanowire-based infrared photodetectors is provided including single nanowires, ensemble nanowires, and heterostructured nanowires. The performance metrics of reported nanowire photodetectors are compared. The potential advantages of nanowire photodetectors, including enhanced absorption, fast carrier collection, multispectral detection, and direct growth on Si, are discussed.

  1. High-efficiency WSi superconducting nanowire single-photon detectors operating at 2.5 K

    SciTech Connect

    Verma, V. B.; Horansky, R. D.; Lita, A. E.; Mirin, R. P.; Nam, S. W.; Korzh, B.; Bussières, F.; Zbinden, H.; Marsili, F.; Shaw, M. D.

    2014-09-22

    We investigate the operation of WSi superconducting nanowire single-photon detectors (SNSPDs) at 2.5 K, a temperature which is ∼70% of the superconducting transition temperature (T{sub C}) of 3.4 K. We demonstrate saturation of the system detection efficiency at 78 ± 2% at a wavelength of 1310 nm, with a jitter of 191 ps. We find that the jitter at 2.5 K is limited by the noise of the readout and can be improved through the use of cryogenic amplifiers. Operation of SNSPDs with high efficiency at temperatures very close to T{sub C} appears to be a unique property of amorphous WSi.

  2. Satellite laser ranging using superconducting nanowire single-photon detectors at 1064  nm wavelength.

    PubMed

    Xue, Li; Li, Zhulian; Zhang, Labao; Zhai, Dongsheng; Li, Yuqiang; Zhang, Sen; Li, Ming; Kang, Lin; Chen, Jian; Wu, Peiheng; Xiong, Yaoheng

    2016-08-15

    Satellite laser ranging operating at 1064 nm wavelength using superconducting nanowire single-photon detectors (SNSPDs) is successfully demonstrated. A SNSPD with an intrinsic quantum efficiency of 80% and a dark count rate of 100 cps at 1064 nm wavelength is developed and introduced to Yunnan Observatory in China. With improved closed-loop telescope systems (field of view of about 26''), satellites including Cryosat, Ajisai, and Glonass with ranges of 1600 km, 3100 km, and 19,500 km, respectively, are experimentally ranged with mean echo rates of 1200/min, 4200/min, and 320/min, respectively. To the best of our knowledge, this is the first demonstration of laser ranging for satellites using SNSPDs at 1064 nm wavelength. Theoretical analysis of the detection efficiency and the mean echo rate for typical satellites indicate that it is possible for a SNSPD to range satellites from low Earth orbit to geostationary Earth orbit.

  3. InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.

    PubMed

    Berg, Martin; Persson, Karl-Magnus; Wu, Jun; Lind, Erik; Sjöland, Henrik; Wernersson, Lars-Erik

    2014-12-05

    Integration of III-V semiconductors on Si substrates allows for the realization of high-performance, low power III-V electronics on the Si-platform. In this work, we demonstrate the implementation of single balanced down-conversion mixer circuits, fabricated using vertically aligned InAs nanowire devices on Si. A thin, highly doped InAs buffer layer has been introduced to reduce the access resistance and serve as a bottom electrode. Low-frequency voltage conversion gain is measured up to 7 dB for a supply voltage of 1.5V. Operation of these mixers extends into the GHz regime with a -3 dB cut-off frequency of 2 GHz, limited by the optical lithography system used. The circuit dc power consumption is measured at 3.9 mW.

  4. High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

    SciTech Connect

    Wu, Y.; Li, X.; Xu, P.; Wang, Y.; Shen, X.; Liu, X.; Yang, Q.; Hasan, T.

    2015-02-02

    We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 μA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 μA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecture offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.

  5. On-chip lithium cells for electrical and structural characterization of single nanowire electrodes

    NASA Astrophysics Data System (ADS)

    Subramanian, A.; Hudak, N. S.; Huang, J. Y.; Zhan, Y.; Lou, J.; Sullivan, J. P.

    2014-07-01

    We present a transmission electron microscopy (TEM)-compatible, hybrid nanomachined, on-chip construct for probing the structural and electrical changes in individual nanowire electrodes during lithium insertion. We have assembled arrays of individual β-phase manganese dioxide (β-MnO2) nanowires (NWs), which are employed as a model material system, into functional electrochemical cells through a combination of bottom-up (dielectrophoresis) and top-down (silicon nanomachining) unit processes. The on-chip NWs are electrochemically lithiated inside a helium-filled glovebox and their electrical conductivity is studied as a function of incremental lithium loading during initial lithiation. We observe a dramatic reduction in NW conductivity (on the order of two to three orders in magnitude), which is not reversed when the lithium is extracted from the nanoelectrode. This conductivity change is attributed to an increase in lattice disorder within the material, which is observed from TEM images of the lithiated NWs. Furthermore, electron energy loss spectroscopy (EELS) was employed to confirm the reduction in valence state of manganese, which occurs due to the transformation of MnO2 to LixMnO2.

  6. Electrical transport properties of single undoped and n-type doped InN nanowires.

    PubMed

    Richter, T; Lüth, H; Schäpers, Th; Meijers, R; Jeganathan, K; Estévez Hernández, S; Calarco, R; Marso, M

    2009-10-07

    Electrical transport properties of undoped and n-type doped InN nanowires grown by molecular beam epitaxy were studied by current-voltage and back-gate field-effect transistor measurements. The current-voltage characteristics show ohmic behavior in the temperature range between 4 and 300 K. Down to about 120 K a linear decrease in resistance with temperature is observed. The investigation of a large number of nanowires revealed for undoped as well as doped wires an approximately linear relation between the normalized conductance and diameter for wires with a diameter below 100 nm. This shows that the main conduction takes place in the tubular surface accumulation layer of the wires. In contrast, for doped wires with a diameter larger than 100 nm a quadratic dependence of conduction on the diameter was found, which is attributed to bulk conductance as the main contribution. The successful doping of the wires is confirmed by an enhanced conduction and by the results of the back-gate field-effect transistor measurements.

  7. Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires.

    PubMed

    Wu, Di; Jiang, Yang; Yu, Yongqiang; Zhang, Yugang; Li, Guohua; Zhu, Zhifeng; Wu, Chunyan; Wang, Li; Luo, Linbao; Jie, Jiansheng

    2012-12-07

    Nonvolatile resistive switching has been observed for the first time in CdSe nanowire (NW)/Au Schottky barrier diodes, where a Schottky contact electrode and an Ohmic contact electrode were formed at the Au/CdSe NW and CdSe NW/In interfaces, respectively. The CdSe NWs Schottky devices were found to possess multibit storage ability in an individual nanowire, and exhibited excellent memory characteristics, with a resistance on/off ratio exceeding four orders of magnitude, a long retention time of over 10(4) s and a lower operating voltage of 2 V. By replacing the SiO(2)/Si substrate with a poly ethylene terephthalate substrate, flexible and transparent memory devices with superior stability under strain were realized. The resistive switching of CdSe NW/Au Schottky devices is understood by electron trapping and detrapping in the interfacial oxide layer. Our findings provide a viable way to create new functional high-density nonvolatile multibit memory devices compatible with simple processing techniques for normal one-dimensional nanomaterials.

  8. Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires

    NASA Astrophysics Data System (ADS)

    Wu, Di; Jiang, Yang; Yu, Yongqiang; Zhang, Yugang; Li, Guohua; Zhu, Zhifeng; Wu, Chunyan; Wang, Li; Luo, Linbao; Jie, Jiansheng

    2012-12-01

    Nonvolatile resistive switching has been observed for the first time in CdSe nanowire (NW)/Au Schottky barrier diodes, where a Schottky contact electrode and an Ohmic contact electrode were formed at the Au/CdSe NW and CdSe NW/In interfaces, respectively. The CdSe NWs Schottky devices were found to possess multibit storage ability in an individual nanowire, and exhibited excellent memory characteristics, with a resistance on/off ratio exceeding four orders of magnitude, a long retention time of over 104 s and a lower operating voltage of 2 V. By replacing the SiO2/Si substrate with a poly ethylene terephthalate substrate, flexible and transparent memory devices with superior stability under strain were realized. The resistive switching of CdSe NW/Au Schottky devices is understood by electron trapping and detrapping in the interfacial oxide layer. Our findings provide a viable way to create new functional high-density nonvolatile multibit memory devices compatible with simple processing techniques for normal one-dimensional nanomaterials.

  9. Intrinsic nanotwin effect on thermal boundary conductance in bulk and single-nanowire twinning superlattices

    NASA Astrophysics Data System (ADS)

    Porter, Aaron; Tran, Chan; Sansoz, Frederic

    2016-05-01

    Coherent twin boundaries form periodic lamellar twinning in a wide variety of semiconductor nanowires, and they are often viewed as near-perfect interfaces with reduced phonon and electron scattering behaviors. Such unique characteristics are of practical interest for high-performance thermoelectrics and optoelectronics; however, insufficient understanding of twin-size effects on thermal boundary resistance poses significant limitations for potential applications. Here, using atomistic simulations and ab initio calculations, we report direct computational observations showing a crossover from diffuse interface scattering to superlatticelike behavior for thermal transport across nanoscale twin boundaries present in prototypical bulk and nanowire Si examples. Intrinsic interface scattering is identified for twin periods ≥22.6 nm, but it also vanishes below this size to be replaced by ultrahigh Kapitza thermal conductances. Detailed analysis of vibrational modes shows that modeling twin boundaries as atomically thin 6 H -Si layers, rather than phonon scattering interfaces, provides an accurate description of effective cross-plane and in-plane thermal conductivities in twinning superlattices, as a function of the twin period thickness.

  10. Dramatic enhancement of superconductivity in single-crystalline nanowire arrays of Sn

    PubMed Central

    Zhang, Ying; Wong, Chi Ho; Shen, Junying; Sze, Sin Ting; Zhang, Bing; Zhang, Haijing; Dong, Yan; Xu, Hui; Yan, Zifeng; Li, Yingying; Hu, Xijun; Lortz, Rolf

    2016-01-01

    Sn is a classical superconductor on the border between type I and type II with critical temperature of 3.7 K. We show that its critical parameters can be dramatically increased if it is brought in the form of loosely bound bundles of thin nanowires. The specific heat displays a pronounced double phase transition at 3.7 K and 5.5 K, which we attribute to the inner ‘bulk’ contribution of the nanowires and to the surface contribution, respectively. The latter is visible only because of the large volume fraction of the surface layer in relation to the bulk volume. The upper transition coincides with the onset of the resistive transition, while zero resistance is gradually approached below the lower transition. In contrast to the low critical field Hc = 0.03 T of Sn in its bulk form, a magnetic field of more than 3 T is required to fully restore the normal state. PMID:27595646

  11. Coherent detection of weak signals with superconducting nanowire single photon detector at the telecommunication wavelength

    NASA Astrophysics Data System (ADS)

    Shcherbatenko, M.; Lobanov, Y.; Semenov, A.; Kovalyuk, V.; Korneev, A.; Ozhegov, R.; Kaurova, N.; Voronov, B.; Goltsman, G.

    2017-05-01

    Achievement of the ultimate sensitivity along with a high spectral resolution is one of the frequently addressed problems, as the complication of the applied and fundamental scientific tasks being explored is growing up gradually. In our work, we have investigated performance of a superconducting nanowire photon-counting detector operating in the coherent mode for detection of weak signals at the telecommunication wavelength. Quantum-noise limited sensitivity of the detector was ensured by the nature of the photon-counting detection and restricted by the quantum efficiency of the detector only. Spectral resolution given by the heterodyne technique and was defined by the linewidth and stability of the Local Oscillator (LO). Response bandwidth was found to coincide with the detector's pulse width, which, in turn, could be controlled by the nanowire length. In addition, the system noise bandwidth was shown to be governed by the electronics/lab equipment, and the detector noise bandwidth is predicted to depend on its jitter. As have been demonstrated, a very small amount of the LO power (of the order of a few picowatts down to hundreds of femtowatts) was required for sufficient detection of the test signal, and eventual optimization could lead to further reduction of the LO power required, which would perfectly suit for the foreseen development of receiver matrices and the need for detection of ultra-low signals at a level of less-than-one-photon per second.

  12. Dependence of superconducting properties of NbN thin films on sputtering parameters

    NASA Astrophysics Data System (ADS)

    Khaire, Trupti; Carter, Faustin; Ding, Junjia; Posada, Chrystian; Bender, Amy; Wang, Gensheng; Yefremenko, Volodymyr; Pearson, John; Padin, Steve; Chang, Clarence; Hoffmann, Axel; Novosad, Valentyn; SPT3G Collaboration

    Recently, there has been growing interest in utilizing NbN, TiN, NbTiN thin films in superconducting device applications (e.g. detectors for CMB, mm and sub-mm astronomy). In this work, we have fabricated NbN superconducting thin films by DC reactive magnetron sputtering of Nb in the presence of argon and nitrogen gases. We found that the critical temperature of NbN films is sensitive to various deposition parameters like nitrogen flow rate, target voltage, base pressure, RF substrate bias, and the substrate temperature. By studying each of these factors we have been able to create highly reproducible NbN thin films. We obtained a Tc of 15.25 +/-0.25 K for 300 nm thick NbN film grown on silicon substrate at modest temperature of 250 C in the presence of RF substrate bias. We are also investigating the microwave properties of these NbN films at temperatures well below 50 mK by fabricating quarter wavelength CPW resonators out of NbN and characterizing their frequency shifts and quality factors as functions of temperature and power. In this work we present the results of these analyses. This work was supported by BES-DOE Grant DE-AC02-06CH11357.

  13. Magnetic properties of GaAs-Fe3Si core-shell nanowires—A comparison of ensemble and single nanowire investigation

    NASA Astrophysics Data System (ADS)

    Hilse, Maria; Jenichen, Bernd; Herfort, Jens

    2017-05-01

    On the basis of semiconductor-ferromagnet GaAs-Fe3Si core-shell nanowires (Nws) we compare the facilities of magnetic Nw ensemble measurements by superconducting quantum interference device magnetometry versus investigations on single Nws by magnetic force microscopy and computational micromagnetic modeling. Where a careful analysis of ensemble measurements backed up by transmission electron microscopy gave no insights on the properties of the Nw shells, single Nw investigation turned out to be absolutely essential.

  14. 1/f Noise QWIPs and nBn detectors

    NASA Astrophysics Data System (ADS)

    Gunapala, S. D.; Rafol, S. B.; Ting, D. Z.; Soibel, A.; Höglund, L.; Hill, C. J.; Khoshakhlagh, A.; Liu, J. K.; Mumolo, J. M.; Keo, S. A.

    2015-05-01

    The low-frequency noise is a ubiquitous phenomenon and the spectral power density of this fluctuation process is inversely proportional to the frequency of the signal. We have measured the 1/f noise of a 640 × 512 pixel quantum well infrared photodetector (QWIP) focal plane array (FPA) with 6.2 μm peak wavelength. Our experimental observations show that this QWIP FPA's 1/f noise corner frequency is about 0.1 mHz. With this kind of low frequency stability, QWIPs could unveil a new class of infrared applications that have never been imagined before. Furthermore, we present the results from a similar 1/f noise measurement of bulk InAsSb absorber (lattice matched to GaSb substrate) nBn detector array with 4.0 μm cutoff wavelength.

  15. 1/f noise QWIPs, superlattice, and nBn detectors

    NASA Astrophysics Data System (ADS)

    Gunapala, S. D.; Rafol, S. B.; Ting, D. Z.; Soibel, A.; Hill, C. J.; Khoshakhlagh, A.; Nguyen, J.; Baker, L.; Fisher, A.; Liu, J. K.; Mumolo, J. M.; Keo, S. A.; Pepper, B.

    2016-09-01

    The low-frequency noise is a ubiquitous phenomenon and the spectral power density of this fluctuation process is inversely proportional to the frequency of the signal. We have measured the 1/f noise of a 640x512 pixel quantum well infrared photodetector (QWIP) focal plane array (FPA) with 6.2 μm peak wavelength. Our experimental observations show that this QWIP FPA's 1/f noise corner frequency is about 0.1 mHz. With this kind of low frequency stability, QWIPs could unveil a new class of infrared applications that have never been imagined before. Furthermore, we present the results from a similar 1/f noise measurement of bulk InAsSb absorber (lattice matched to GaSb substrate) nBn detector array with 4.0 μm cutoff wavelength.

  16. High quantum efficiency and low dark count rate in multi-layer superconducting nanowire single-photon detectors

    SciTech Connect

    Jafari Salim, A. Eftekharian, A.; Hamed Majedi, A.

    2014-02-07

    In this paper, we theoretically show that a multi-layer superconducting nanowire single-photon detector (SNSPD) is capable of approaching characteristics of an ideal SNSPD in terms of the quantum efficiency, dark count, and band-width. A multi-layer structure improves the performance in two ways. First, the potential barrier for thermally activated vortex crossing, which is the major source of dark counts and the reduction of the critical current in SNSPDs is elevated. In a multi-layer SNSPD, a vortex is made of 2D-pancake vortices that form a stack. It will be shown that the stack of pancake vortices effectively experiences a larger potential barrier compared to a vortex in a single-layer SNSPD. This leads to an increase in the experimental critical current as well as significant decrease in the dark count rate. In consequence, an increase in the quantum efficiency for photons of the same energy or an increase in the sensitivity to photons of lower energy is achieved. Second, a multi-layer structure improves the efficiency of single-photon absorption by increasing the effective optical thickness without compromising the single-photon sensitivity.

  17. Electroplating and magnetostructural characterization of multisegmented Co54Ni46/Co85Ni15 nanowires from single electrochemical bath in anodic alumina templates

    PubMed Central

    2013-01-01

    Highly hexagonally ordered hard anodic aluminum oxide membranes, which have been modified by a thin cover layer of SiO2 deposited by atomic layer deposition method, were used as templates for the synthesis of electrodeposited magnetic Co-Ni nanowire arrays having diameters of around 180 to 200 nm and made of tens of segments with alternating compositions of Co54Ni46 and Co85Ni15. Each Co-Ni single segment has a mean length of around 290 nm for the Co54Ni46 alloy, whereas the length of the Co85Ni15 segments was around 430 nm. The composition and crystalline structure of each Co-Ni nanowire segment were determined by transmission electron microscopy and selected area electron diffraction techniques. The employed single-bath electrochemical nanowire growth method allows for tuning both the composition and crystalline structure of each individual Co-Ni segment. The room temperature magnetic behavior of the multisegmented Co-Ni nanowire arrays is also studied and correlated with their structural and morphological properties. PMID:23735184

  18. Amorphous layer coating induced brittle to ductile transition in single crystalline SiC nanowires: an atomistic simulation

    SciTech Connect

    Wang, Zhiguo; Zu, Xiaotao T.; Li, Zhijie; Gao, Fei

    2008-08-07

    Molecular dynamics simulations with Tersoff potentials were used to study the response of SiC nanowires with and without amorphous coating to a tensile strain along the axial direction. The uncoated nanowires show brittle properties and fail through bond breaking. Although the amorphous coating leads to the decrease of Young’s modulus of nanowires, yet it also leads the appearance of plastic deformation under axial strain. These results provide an effective way to modify the brittle properties of some other semiconductor nanowires.

  19. Single crystalline La0.7Sr0.3MnO3 molecular sieve nanowires with high temperature ferromagnetism.

    PubMed

    Carretero-Genevrier, Adrián; Gázquez, Jaume; Idrobo, Juan Carlos; Oró, Judith; Arbiol, Jordi; Varela, María; Ferain, Etienne; Rodríguez-Carvajal, Juan; Puig, Teresa; Mestres, Narcís; Obradors, Xavier

    2011-03-23

    Porous mixed-valent manganese oxides are a group of multifunctional materials that can be used as molecular sieves, catalysts, battery materials, and gas sensors. However, material properties and thus activity can vary significantly with different synthesis methods or process conditions, such as temperature and time. Here, we report on a new synthesis route for MnO(2) and LaSr-doped molecular sieve single crystalline nanowires based on a solution chemistry methodology combined with the use of nanoporous polymer templates supported on top of single crystalline substrates. Because of the confined nucleation in high aspect ratio nanopores and of the high temperatures attained, new structures with novel physical properties have been produced. During the calcination process, the nucleation and crystallization of ε-MnO(2) nanoparticles with a new hexagonal structure is promoted. These nanoparticles generated up to 30 μm long and flexible hexagonal nanowires at mild growth temperatures (T(g) = 700 °C) as a consequence of the large crystallographic anisotropy of ε-MnO(2). The nanocrystallites of MnO(2) formed at low temperatures serve as seeds for the growth of La(0.7)Sr(0.3)MnO(3) nanowires at growth temperatures above 800 °C, through the diffusion of La and Sr into the empty 1D-channels of ε-MnO(2). Our particular growth method has allowed the synthesis of single crystalline molecular sieve (LaSr-2 × 4) monoclinic nanowires with composition La(0.7)Sr(0.3)MnO(3) and with ordered arrangement of La(3+) and Sr(2+) cations inside the 1D-channels. These nanowires exhibit ferromagnetic ordering with strongly enhanced Curie temperature (T(c) > 500 K) that probably results from the new crystallographic order and from the mixed valence of manganese.

  20. Probing plasmonic hot spots on single gold nanowires using combined near-field techniques

    NASA Astrophysics Data System (ADS)

    Hsia, Patrick; Douillard, Ludovic; Charra, Fabrice; Marguet, Sylvie; Kostcheev, Sergei; Bachelot, Renaud J. B.; Fiorini-Debuisschert, Céline

    2015-08-01

    The plasmonic properties of individual gold nanowires (NW) have been investigated using both two-photon luminescence (2PL) coupled to atomic force microscopy (AFM) and photoemission electron microscopy (PEEM) associated to low-energy electron microscopy (LEEM) measurements. Using these complementary near-field characterization techniques, comparative studies between wires made either by colloidal chemistry (CC) or by e-beam lithography (EBL) have been undertaken towards a better understanding of the role of the wires crystallinity regarding its optical properties. Considering comparable excitation conditions, we show that wires made by colloidal synthesis exhibits quite similar field enhancement effects ("hot spots") as EBL NW, however their 2PL emission spectrum clearly reveals their crystalline properties.

  1. Gold nanoparticles-decorated single silver nanowire as an efficient SERS-active substrate

    NASA Astrophysics Data System (ADS)

    Tan, En-zhong

    2014-07-01

    A novel surface-enhanced Raman scattering (SERS)-active substrate based on Au nanoparticles (AuNPs)-coated silver nanowire (AgNW) is obtained by an effective and simple method. The results show that the hybrid structures prepared by this method are powerful SERS-active substrates for the detection of malachite green (MG) molecules with the limit of 1 nmol/L. The excellent enhancing ability mainly comes from two kinds of hot spots. One is from the gaps among the adjacent AuNPs, and the other is the presence of zone between AuNPs and AgNW. In particular, the AuNPs-coated AgNW can be viewed through the objective of the confocal Raman spectrometer due to the length of the AgNW reaches microns, which can improve the repeatability of detection. Moreover, it is of great significance in research of SERS mechanism and application.

  2. Single domain wall manipulation in curved nanowires using a mobile, local, circular field

    NASA Astrophysics Data System (ADS)

    Shortt, Madeline; Bickel, Jessica; Khan, Mina; Tuominen, Mark; Aidala, Katherine

    2014-03-01

    Ferromagnetic nanostructures present exciting physics with a range of potential applications in data storage devices, such as magnetoresistive random access memory (MRAM). These proposals require precise control and understanding of domain wall (DW) movement and interactions. We developed a technique that generates a local circular Oersted field at a precise location by applying current through the tip of the atomic force microscope (AFM). We previously used this technique to control DW motion in nanorings. We extend this method to control individual DW movement in curved nanowires by placing the tip near a 180 DW at the vertex of a curved wire and generating a local field. In this way, we can examine the motion of domain walls through regions with different curvature and the effects of pinning. This work was supported in part by NSF DMR-1207924 and the UMass Center for Hierarchical Manufacturing, NSF CMMI-1025020.

  3. Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient.

    PubMed

    Barreda, Jorge L; Keiper, Timothy D; Zhang, Mei; Xiong, Peng

    2017-04-05

    In comparison to conventional (channel-limited) field-effect transistors (FETs), Schottky barrier-limited FETs possess some unique characteristics which make them attractive candidates for some electronic and sensing applications. Consequently, modulation of the nano Schottky barrier at a metal-semiconductor interface promises higher performance for chemical and biomolecular sensor applications when compared to conventional FETs with ohmic contacts. However, the fabrication and optimization of devices with a combination of ideal ohmic and Schottky contacts as the source and drain, respectively, present many challenges. We address this issue by utilizing Si nanowires (NWs) synthesized by a chemical vapor deposition process which yields a pronounced doping gradient along the length of the NWs. Devices with a series of metal contacts on a single Si NW are fabricated in a single lithography and metallization process. The graded doping profile of the NW is manifested in monotonic increases in the channel and junction resistances and variation of the nature of the contacts from ohmic to Schottky of increasing effective barrier height along the NW. Hence multiple single Schottky junction-limited FETs with extreme asymmetry and high reproducibility are obtained on an individual NW. A definitive correlation between increasing Schottky barrier height and enhanced gate modulation is revealed. Having access to systematically varying Schottky barrier contacts on the same NW device provides an ideal platform for identifying optimal device characteristics for sensing and electronic applications.

  4. Effect of Defects on III-V MWIR nBn Detector Performance

    DTIC Science & Technology

    2014-08-01

    MWIR, nBn, photodiode, defects, irradiation, lattice mismatch, dark current REPORT DOCUMENTATION PAGE 11. SPONSOR/MONITOR’S REPORT NUMBER(S) 10...rather than diffusion based processes. Keywords: infrared detectors, MWIR, nBn, photodiode, defects, irradiation, lattice mismatch, dark current...grown into the bulk crystal lattice , dislocations from growth on mismatched substrates, or layer interface defects in type-II strained layer

  5. Nanowire sensors and arrays for chemical/biomolecule detection

    NASA Technical Reports Server (NTRS)

    Yun, Minhee; Lee, Choonsup; Vasquez, Richard P.; Ramanathan, K.; Bangar, M. A.; Chen, W.; Mulchandan, A.; Myung, N. V.

    2005-01-01

    We report electrochemical growth of single nanowire based sensors using e-beam patterned electrolyte channels, potentially enabling the controlled fabrication of individually addressable high density arrays. The electrodeposition technique results in nanowires with controlled dimensions, positions, alignments, and chemical compositions. Using this technique, we have fabricated single palladium nanowires with diameters ranging between 75 nm and 300 nm and conducting polymer nanowires (polypyrrole and polyaniline) with diameters between 100 nm and 200 nm. Using these single nanowires, we have successfully demonstrated gas sensing with Pd nanowires and pH sensing with polypirrole nanowires.

  6. Nanowire sensors and arrays for chemical/biomolecule detection

    NASA Technical Reports Server (NTRS)

    Yun, Minhee; Lee, Choonsup; Vasquez, Richard P.; Ramanathan, K.; Bangar, M. A.; Chen, W.; Mulchandan, A.; Myung, N. V.

    2005-01-01

    We report electrochemical growth of single nanowire based sensors using e-beam patterned electrolyte channels, potentially enabling the controlled fabrication of individually addressable high density arrays. The electrodeposition technique results in nanowires with controlled dimensions, positions, alignments, and chemical compositions. Using this technique, we have fabricated single palladium nanowires with diameters ranging between 75 nm and 300 nm and conducting polymer nanowires (polypyrrole and polyaniline) with diameters between 100 nm and 200 nm. Using these single nanowires, we have successfully demonstrated gas sensing with Pd nanowires and pH sensing with polypirrole nanowires.

  7. Radiative recombination mechanisms in individual wurtzite ZnSe nanowires with a defect-free single-crystalline microstructure.

    PubMed

    Saxena, Ankur; Pan, Qi; Ruda, Harry E

    2013-04-07

    Photoluminescence (PL) spectroscopy performed on arrays of semiconductor nanowires (NWs) suffers from ensemble broadening of PL lines, and fails to separate the PL from NWs of different crystal structures in the ensemble. Even the results on PL from single NWs are not devoid of ambiguity. This is because the influence of structural defects in NWs, such as stacking faults, twin boundaries and dislocations, on their optical spectra cannot be accounted for since the structural characteristics of the same NW remain largely unknown. We performed low-temperature PL spectroscopy on individual wurtzite (WZ) ZnSe NWs, and confirmed a homogeneous single-crystalline microstructure without any extended defects in these NWs, thus excluding any role of structural imperfections in their optical spectra. The luminescence is shown to be dominated solely by native point defects, while no role of extrinsic impurities was found. The radiative recombination is shown to originate from excitons bound to vacancies of Zn (VZn), VZn-complexes, and their phonon replicas. The binding energies of the acceptor-bound excitons, ionization energies of the acceptors, and average number of phonons emitted for shallow donor-VZn acceptor pair related transition were determined. Distinct from previous studies on PL from arrays of ZnSe NWs, this work provides an unambiguous interpretation of the PL spectra and assignment of PL peaks to WZ ZnSe. Narrow excitonic emission of linewidths 2.9 meV indicate excellent optical quality of WZ ZnSe NWs.

  8. Electrical and photoresponse properties of an intramolecular p-n homojunction in single phosphorus-doped ZnO nanowires.

    PubMed

    Li, Ping-Jian; Liao, Zhi-Min; Zhang, Xin-Zheng; Zhang, Xue-Jin; Zhu, Hui-Chao; Gao, Jing-Yun; Laurent, K; Leprince-Wang, Y; Wang, N; Yu, Da-Peng

    2009-07-01

    The single-crystal n-type and p-type ZnO nanowires (NWs) were synthesized via a chemical vapor deposition method, where phosphorus pentoxide was used as the dopant source. The electrical and photoluminescence studies reveal that phosphorus-doped ZnO NWs (ZnO:P NWs) can be changed from n-type to p-type with increasing P concentration. Furthermore, we report for the first time the formation of an intramolecular p-n homojunction in a single ZnO:P NW. The p-n junction diode has a high on/off current ratio of 2.5 x 10(3) and a low forward turn-on voltage of approximately 1.37 V. Finally, the photoresponse properties of the diode were investigated under UV (325 nm) excitation in air at room temperature. The high photocurrent/dark current ratio (3.2 x 10(4)) reveals that the diode has a potential as extreme sensitive UV photodetectors.

  9. Fabrication of single phase p-CuInSe{sub 2} nanowire arrays by electrodeposited into anodic alumina templates

    SciTech Connect

    Cheng, Yu-Song; Lang, Hao-Jan; Houng, Mau-Phon

    2015-10-19

    Single-phase CuInSe{sub 2} nanowire (NW) arrays were prepared at various pH values in a heated electrolyte by using pulse electrodeposition techniques and an anodized aluminum oxide template. X-ray diffraction showed that the CuInSe{sub 2} NW nucleation mechanism received H{sup +} constraints when the NWs were deposited at pH 1.7 with a (112) orientation and annealed at 550 °C. The CuInSe{sub 2} NW band gap was determined to be approximately 1 eV through optical measurements. Transmission electron microscopy showed that at the pH value of 1.7, small particles of the single-phase CuInSe{sub 2} NWs aligned along the crystallographic direction are nucleated to form large particles. Scanning electron microscopy revealed that the NW diameter and the length were 80 nm and 2.3 μm, respectively. From Mott–Schottky and Ohmic contact plots, the CuInSe{sub 2} NWs were found to be p-type semiconductors, and their work function was estimated to be approximately 4.69 eV.

  10. Multiexciton dynamics in infrared-emitting colloidal nanostructures probed by a superconducting nanowire single-photon detector.

    PubMed

    Sandberg, Richard L; Padilha, Lazaro A; Qazilbash, Muhammad M; Bae, Wan Ki; Schaller, Richard D; Pietryga, Jeffrey M; Stevens, Martin J; Baek, Burm; Nam, Sae Woo; Klimov, Victor I

    2012-11-27

    Carrier multiplication (CM) is the process in which absorption of a single photon produces multiple electron-hole pairs. Here, we evaluate the effect of particle shape on CM efficiency by conducting a comparative study of spherical nanocrystal quantum dots (NQDs) and elongated nanorods (NRs) of PbSe using a time-resolved technique that is based on photon counting in the infrared using a superconducting nanowire single-photon photodetector (SNSPD). Due to its high sensitivity and low noise levels, this technique allows for accurate determination of CM yields, even with the small excitation intensities required for quantitative measurements, and the fairly low emission quantum yields of elongated NR samples. Our measurements indicate an up to ∼60% increase in multiexciton yields in NRs versus NQDs, which is attributed primarily to a decrease in the electron-hole pair creation energy. These findings suggest that shape control is a promising approach for enhancing the CM process. Further, our work demonstrates the effectiveness of the SNSPD technique for the rapid screening of CM performance in infrared nanomaterials.

  11. An ultrasensitive electrochemical DNA biosensor based on a copper oxide nanowires/single-walled carbon nanotubes nanocomposite

    NASA Astrophysics Data System (ADS)

    Chen, Mei; Hou, Changjun; Huo, Danqun; Yang, Mei; Fa, Huanbao

    2016-02-01

    Here, we developed a novel and sensitive electrochemical biosensor to detect specific-sequence target DNA. The biosensor was based on a hybrid nanocomposite consisting of copper oxide nanowires (CuO NWs) and carboxyl-functionalized single-walled carbon nanotubes (SWCNTs-COOH). The resulting CuO NWs/SWCNTs layers exhibited a good differential pulse voltammetry (DPV) current response for the target DNA sequences, which we attributed to the properties of CuO NWs and SWCNTs. CuO NWs and SWCNTs hybrid composites with highly conductive and biocompatible nanostructure were characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), and cyclic voltammetry (CV). Immobilization of the probe DNA on the electrode surface was largely improved due to the unique synergetic effect of CuO NWs and SWCNTs. DPV was applied to monitor the DNA hybridization event, using adriamycin as an electrochemical indicator. Under optimal conditions, the peak currents of adriamycin were linear with the logarithm of target DNA concentrations (ranging from 1.0 × 10-14 to 1.0 × 10-8 M), with a detection limit of 3.5 × 10-15 M (signal/noise ratio of 3). The biosensor also showed high selectivity to single-base mismatched target DNA. Compared with other electrochemical DNA biosensors, we showed that the proposed biosensor is simple to implement, with good stability and high sensitivity.

  12. Fabrication of single phase p-CuInSe2 nanowire arrays by electrodeposited into anodic alumina templates

    NASA Astrophysics Data System (ADS)

    Cheng, Yu-Song; Lang, Hao-Jan; Houng, Mau-Phon

    2015-10-01

    Single-phase CuInSe2 nanowire (NW) arrays were prepared at various pH values in a heated electrolyte by using pulse electrodeposition techniques and an anodized aluminum oxide template. X-ray diffraction showed that the CuInSe2 NW nucleation mechanism received H+ constraints when the NWs were deposited at pH 1.7 with a (112) orientation and annealed at 550 °C. The CuInSe2 NW band gap was determined to be approximately 1 eV through optical measurements. Transmission electron microscopy showed that at the pH value of 1.7, small particles of the single-phase CuInSe2 NWs aligned along the crystallographic direction are nucleated to form large particles. Scanning electron microscopy revealed that the NW diameter and the length were 80 nm and 2.3 μm, respectively. From Mott-Schottky and Ohmic contact plots, the CuInSe2 NWs were found to be p-type semiconductors, and their work function was estimated to be approximately 4.69 eV.

  13. Modulating resonance modes and Q value of a CdS nanowire cavity by single Ag nanoparticles.

    PubMed

    Zhang, Qing; Shan, Xin-Yan; Feng, Xiao; Wang, Chun-Xiao; Wang, Qu-Quan; Jia, Jin-Feng; Xue, Qi-Kun

    2011-10-12

    Semiconductor nanowire (NW) cavities with tailorable optical modes have been used to develop nanoscale oscillators and amplifiers in microlasers, sensors, and single photon emitters. The resonance modes of NW could be tuned by different boundary conditions. However, continuously and reversibly adjusting resonance modes and improving Q-factor of the cavity remain a great challenge. We report a method to modulate resonance modes continuously and reversibly and improve Q-factor based on surface plasmon-exciton interaction. By placing single Ag nanoparticle (NP) nearby a CdS NW, we show that the wavelength and relative intensity of the resonance modes in the NW cavity can systematically be tuned by adjusting the relative position of the Ag NP. We further demonstrate that a 56% enhancement of Q-factor and an equivalent π-phase shift of the resonance modes can be achieved when the Ag NP is located near the NW end. This hybrid cavity has potential applications in active plasmonic and photonic nanodevices.

  14. Generation and the role of dislocations in single-crystalline phase-change In 2 Se 3 nanowires under electrical pulses

    SciTech Connect

    Mafi, Elham; Tao, Xin; Zhu, Wenguang; Gao, Yanfei; Wang, Chongmin; Gu, Yi

    2016-07-08

    Using single crystalline In2Se3 nanowires as a platform, we have studied the RESET switching (from low to high electrical resistance) in this phase-change material under electric pulses. Particularly, we correlated the atomic-scale structural evolutions with local electrical resistance variations, by performing transmission electron microscopy and scanning Kelvin probe microscopy on the same nanowires. By coupling the experimental results with density functional theory calculations, we show that the immobile dislocations generated via vacancy condensations are responsible for the RESET switching and that the material maintains the single crystallinity during the process. This new mechanism is fundamentally different from the crystalline-amorphous transition, which is commonly understood as the underlying process for the RESET switching in similar phase-change materials.

  15. NBN gain is predictive for adverse outcome following image-guided radiotherapy for localized prostate cancer

    PubMed Central

    Sykes, Jenna; Zafarana, Gaetano; Chu, Kenneth C.; Ramnarine, Varune R.; Ishkanian, Adrian; Sendorek, Dorota H.S.; Pasic, Ivan; Lam, Wan L.; Jurisica, Igor; van der Kwast, Theo; Milosevic, Michael; Boutros, Paul C.; Bristow, Robert G.

    2014-01-01

    Despite the use of clinical prognostic factors (PSA, T-category and Gleason score), 20-60% of localized prostate cancers (PCa) fail primary local treatment. Herein, we determined the prognostic importance of main sensors of the DNA damage response (DDR): MRE11A, RAD50, NBN, ATM, ATR and PRKDC. We studied copy number alterations in DDR genes in localized PCa treated with image-guided radiotherapy (IGRT; n=139) versus radical prostatectomy (RadP; n=154). In both cohorts, NBN gains were the most frequent genomic alteration (14.4 and 11% of cases, respectively), and were associated with overall tumour genomic instability (p<0.0001). NBN gains were the only significant predictor of 5yrs biochemical relapse-free rate (bRFR) following IGRT (46% versus 77%; p=0.00067). On multivariate analysis, NBN gain remained a significant independent predictor of bRFR after adjusting for known clinical prognostic variables (HR=3.28, 95% CI 1.56–6.89, Wald p-value=0.0017). No DDR-sensing gene was prognostic in the RadP cohort. In vitro studies correlated NBN gene overexpression with PCa cells radioresistance. In conclusion, NBN gain predicts for decreased bRFR in IGRT, but not in RadP patients. If validated independently, Nibrin gains may be the first PCa predictive biomarker to facilitate local treatment decisions using precision medicine approaches with surgery or radiotherapy. PMID:25415046

  16. Single-crystalline In2S3 nanowire-based flexible visible-light photodetectors with an ultra-high photoresponse

    NASA Astrophysics Data System (ADS)

    Xie, Xuming; Shen, Guozhen

    2015-03-01

    With a band gap of 2.28 eV, In2S3 is an excellent candidate for visible-light sensitive photodetectors. By growing single-crystalline In2S3 nanowires via a simple CVD method, we report the fabrication of high-performance single-crystal In2S3 nanowire-based flexible photodetectors. The as-fabricated flexible photodetectors exhibited an ultra-high Ion/Ioff ratio up to 106 and a high sensitivity to visible incident light with responsivity and quantum efficiency as high as 7.35 × 104 A W-1 and 2.28 × 107%, respectively. Besides, the flexible photodetectors were demonstrated to possess a robust flexibility and excellent stability. With these favorable merits, In2S3 nanowires are believed to have a promising future in the application of high performance and flexible integrated optoelectronic devices.With a band gap of 2.28 eV, In2S3 is an excellent candidate for visible-light sensitive photodetectors. By growing single-crystalline In2S3 nanowires via a simple CVD method, we report the fabrication of high-performance single-crystal In2S3 nanowire-based flexible photodetectors. The as-fabricated flexible photodetectors exhibited an ultra-high Ion/Ioff ratio up to 106 and a high sensitivity to visible incident light with responsivity and quantum efficiency as high as 7.35 × 104 A W-1 and 2.28 × 107%, respectively. Besides, the flexible photodetectors were demonstrated to possess a robust flexibility and excellent stability. With these favorable merits, In2S3 nanowires are believed to have a promising future in the application of high performance and flexible integrated optoelectronic devices. Electronic supplementary information (ESI) available: XRD pattern, SEM image of the back gate FETs, Electronic transport properties, and I-V curves of the device in dark. See DOI: 10.1039/c5nr00410a

  17. Single-crystalline CuO nanowires for resistive random access memory applications

    SciTech Connect

    Hong, Yi-Siang; Chen, Jui-Yuan; Huang, Chun-Wei; Chiu, Chung-Hua; Huang, Yu-Ting; Huang, Ting Kai; He, Ruo Shiuan; Wu, Wen-Wei

    2015-04-27

    Recently, the mechanism of resistive random access memory (RRAM) has been partly clarified and determined to be controlled by the forming and erasing of conducting filaments (CF). However, the size of the CF may restrict the application and development as devices are scaled down. In this work, we synthesized CuO nanowires (NW) (∼150 nm in diameter) to fabricate a CuO NW RRAM nanodevice that was much smaller than the filament (∼2 μm) observed in a bulk CuO RRAM device in a previous study. HRTEM indicated that the Cu{sub 2}O phase was generated after operation, which demonstrated that the filament could be minimize to as small as 3.8 nm when the device is scaled down. In addition, energy dispersive spectroscopy (EDS) and electron energy loss spectroscopy (EELS) show the resistive switching of the dielectric layer resulted from the aggregated oxygen vacancies, which also match with the I-V fitting results. Those results not only verify the switching mechanism of CuO RRAM but also show RRAM has the potential to shrink in size, which will be beneficial to the practical application of RRAM devices.

  18. Contact properties and surface reaction kinetics of single ZnO nanowire devices fabricated by dielectrophoresis

    NASA Astrophysics Data System (ADS)

    Pau, J. L.; García Núñez, C.; García Marín, A.; Guerrero, C.; Rodríguez, P.; Borromeo, S.; Piqueras, J.

    2014-03-01

    This work describes the development of ZnO nanowire (NW) devices for ultraviolet detection and cost-effective gas sensing. A dielectrophoresis (DEP) flow cell fabricated for the integration of NWs on different substrates is presented. The system includes the possibility to set characteristic parameters such as alternating current (AC) frequency, amplitude or flow speed in order to control NW trapping on specific sites defined by micro-gapped electrodes. The electrical characteristics of the rectifying metal/NW contact fabricated by DEP are investigated in darkness and under direct illumination of the metal-NW interface through the ZnO NW. A significant downshift of the turn-on voltage is observed in the current-voltage characteristics during the illumination with photon energies higher than the ZnO bandgap. The reduction is attributed to a barrier height lowering induced by interface charge emission. The effects of AC bias on the thermal drift of the DC average current in NW devices are also discussed. Finally, the reaction kinetics of ethanol and water vapors on the NW surface are compared through the analysis of the DC current under direct exposure to gas flows. Device responses to more complex compound mixtures such as coffee or mint are also monitored over time, showing different performance in both cases.

  19. Assessing the thermoelectric properties of single InSb nanowires: the role of thermal contact resistance

    NASA Astrophysics Data System (ADS)

    Yazji, S.; Swinkels, M. Y.; De Luca, M.; Hoffmann, E. A.; Ercolani, D.; Roddaro, S.; Abstreiter, G.; Sorba, L.; Bakkers, E. P. A. M.; Zardo, I.

    2016-06-01

    The peculiar shape and dimensions of nanowires (NWs) have opened the way to their exploitation in thermoelectric applications. In general, the parameters entering into the thermoelectric figure of merit are strongly interdependent, which makes it difficult to realize an optimal thermoelectric material. In NWs, instead, the power factor can be increased and the thermal conductivity reduced, thus boosting the thermoelectric efficiency compared to bulk materials. However, the assessment of all the thermoelectric properties of a NW is experimentally very challenging. Here, we focus on InSb NWs, which have proved to be promising thermoelectric materials. The figure of merit is accurately determined by using a novel method based on a combination of Raman spectroscopy and electrical measurements. Remarkably, this type of experiment provides a powerful approach allowing us to neglect the role played by thermal contact resistance. Furthermore, we compare the thermal conductivity determined by this novel method to the one determined on the same sample by the thermal bridge method. In this latter approach, the thermal contact resistance is a non-negligible parameter, especially in NWs with large diameters. We provide experimental evidence of the crucial role played by thermal contact resistance in the assessment of the thermal properties of nanostructures, using two different measurement methods of the thermal conductivity.

  20. Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage.

    PubMed

    Limpert, Steven; Burke, Adam; Chen, I-Ju; Anttu, Nicklas; Lehmann, Sebastian; Fahlvik, Sofia; Bremner, Stephen; Conibeer, Gavin J; Thelander, Claes; Pistol, Mats-Erik; Linke, Heiner

    2017-08-31

    Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated "hot carriers" before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber segments. The obtained photovoltage depends on the heterostructure design of the energy filter and is therefore tunable. By using a high-resistance, thermionic barrier, an open-circuit voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap materials, and therefore are a step towards the demonstration of higher efficiency hot carrier solar cells. © 2017 IOP Publishing Ltd.