Characterization and Evaluation of Aged Chromium Nickel Niobium Stainless Steels

NASA Astrophysics Data System (ADS)

Dewar, Matthew

20Cr-32Ni-1Nb stainless steel alloys are commonly used in hydrogen reformer manifolds for transporting hot hydrogen by-products at 750-950°C. After long periods of exposure, embrittling secondary carbides and intermetallic phases can precipitate at the grain boundaries which can drastically reduce the ductility, and the repair weldability of the alloy. The intermetallic silicide, G-phase, is commonly observed in 20Cr-32Ni-1Nb stainless steels, and is prone to liquation cracking during welding operations. G-phase is deleterious to the material, where a high degree of G-phase coarsening will render the material unweldable. The present work will investigate various methods in mitigating G-phase precipitation. Variations in casting methods, wall thickness, homogenization treatments, and alloy chemistry will be examined by evaluating their microstructure after periodically aging the samples. Thermodynamic equilibrium modeling using computational thermodynamic tools will be used to optimize the 20Cr-32Ni-1Nb chemistry following ASTM specifications.

Temperature-dependent structure and phase variation of nickel silicide nanowire arrays prepared by in situ silicidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Hailong; She, Guangwei, E-mail: shegw@mail.ipc.ac.cn; Mu, Lixuan

Graphical abstract: Display Omitted Highlight: ► Nickel silicides nanowire arrays prepared by a simple in situ silicidation method. ► Phases of nickel silicides could be varied by tuning the reaction temperature. ► A growth model was proposed for the nickel silicides nanowires. ► Diffusion rates of Ni and Si play a critical role for the phase variation. -- Abstract: In this paper, we report an in situ silicidizing method to prepare nickel silicide nanowire arrays with varied structures and phases. The in situ reaction (silicidation) between Si and NiCl{sub 2} led to conversion of Si nanowires to nickel silicide nanowires.more » Structures and phases of the obtained nickel silicides could be varied by changing the reaction temperature. At a relatively lower temperature of 700 °C, the products are Si/NiSi core/shell nanowires or NiSi nanowires, depending on the concentration of NiCl{sub 2} solution. At a higher temperature (800 °C and 900 °C), other phases of the nickel silicides, including Ni{sub 2}Si, Ni{sub 31}Si{sub 12}, and NiSi{sub 2}, were obtained. It is proposed that the different diffusion rates of Ni and Si atoms at different temperatures played a critical role in the formation of nickel silicide nanowires with different phases.« less

Fabrication and Gas-Sensing Properties of Ni-Silicide/Si Nanowires.

PubMed

Hsu, Hsun-Feng; Chen, Chun-An; Liu, Shang-Wu; Tang, Chun-Kai

2017-12-01

Ni-silicide/Si nanowires were fabricated by atomic force microscope nano-oxidation on silicon-on-insulator substrates, selective wet etching, and reactive deposition epitaxy. Ni-silicide nanocrystal-modified Si nanowire and Ni-silicide/Si heterostructure multi-stacked nanowire were formed by low- and high-coverage depositions of Ni, respectively. The Ni-silicide/Si Schottky junction and Ni-silicide region were attributed high- and low-resistance parts of nanowire, respectively, causing the resistance of the Ni-silicide nanocrystal-modified Si nanowire and the Ni-silicide/Si heterostructure multi-stacked nanowire to be a little higher and much lower than that of Si nanowire. An O 2 sensing device was formed from a nanowire that was mounted on Pt electrodes. When the nanowires exposed to O 2 , the increase in current in the Ni-silicide/Si heterostructure multi-stacked nanowire was much larger than that in the other nanowires. The Ni-silicide nanocrystal-modified Si nanowire device had the highest sensitivity. The phenomenon can be explained by the formation of a Schottky junction at the Ni-silicide/Si interface in these two types of Ni-Silicide/Si nanowire and the formation of a hole channel at the silicon nanowire/native oxide interface after exposing the nanowires to O 2 .

Ni-silicide growth kinetics in Si and Si/SiO2 core/shell nanowires.

PubMed

Ogata, K; Sutter, E; Zhu, X; Hofmann, S

2011-09-07

A systematic study of the kinetics of axial Ni silicidation of as-grown and oxidized Si nanowires (SiNWs) with different crystallographic orientations and core diameters ranging from ∼ 10 to 100 nm is presented. For temperatures between 300 and 440 °C the length of the total axial silicide intrusion varies with the square root of time, which provides clear evidence that the rate limiting step is diffusion of Ni through the growing silicide phase(s). A retardation of Ni-silicide formation for oxidized SiNWs is found, indicative of a stress induced lowering of the diffusion coefficients. Extrapolated growth constants indicate that the Ni flux through the silicided NW is dominated by surface diffusion, which is consistent with an inverse square root dependence of the silicide length on the NW diameter as observed for (111) orientated SiNWs. In situ TEM silicidation experiments show that NiSi(2) is the first forming phase for as-grown and oxidized SiNWs. The silicide-SiNW interface is thereby atomically abrupt and typically planar. Ni-rich silicide phases subsequently nucleate close to the Ni reservoir, which for as-grown SiNWs can lead to a complete channel break-off for prolonged silicidation due to significant volume expansion and morphological changes.

Ni-Silicide Growth Kinetics in Si and Si/SiO2 Core/Shell Nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hofmann, S.; Sutter, E.; Ogata, K.

A systematic study of the kinetics of axial Ni silicidation of as-grown and oxidized Si nanowires (SiNWs) with different crystallographic orientations and core diameters ranging from {approx} 10 to 100 nm is presented. For temperatures between 300 and 440 C the length of the total axial silicide intrusion varies with the square root of time, which provides clear evidence that the rate limiting step is diffusion of Ni through the growing silicide phase(s). A retardation of Ni-silicide formation for oxidized SiNWs is found, indicative of a stress induced lowering of the diffusion coefficients. Extrapolated growth constants indicate that the Nimore » flux through the silicided NW is dominated by surface diffusion, which is consistent with an inverse square root dependence of the silicide length on the NW diameter as observed for <111> orientated SiNWs. In situ TEM silicidation experiments show that NiSi{sub 2} is the first forming phase for as-grown and oxidized SiNWs. The silicide-SiNW interface is thereby atomically abrupt and typically planar. Ni-rich silicide phases subsequently nucleate close to the Ni reservoir, which for as-grown SiNWs can lead to a complete channel break-off for prolonged silicidation due to significant volume expansion and morphological changes.« less

Defect-free erbium silicide formation using an ultrathin Ni interlayer.

PubMed

Choi, Juyun; Choi, Seongheum; Kang, Yu-Seon; Na, Sekwon; Lee, Hoo-Jeong; Cho, Mann-Ho; Kim, Hyoungsub

2014-08-27

An ultrathin Ni interlayer (∼1 nm) was introduced between a TaN-capped Er film and a Si substrate to prevent the formation of surface defects during thermal Er silicidation. A nickel silicide interfacial layer formed at low temperatures and incurred uniform nucleation and the growth of a subsequently formed erbium silicide film, effectively inhibiting the generation of recessed-type surface defects and improving the surface roughness. As a side effect, the complete transformation of Er to erbium silicide was somewhat delayed, and the electrical contact property at low annealing temperatures was dominated by the nickel silicide phase with a high Schottky barrier height. After high-temperature annealing, the early-formed interfacial layer interacted with the growing erbium silicide, presumably forming an erbium silicide-rich Er-Si-Ni mixture. As a result, the electrical contact property reverted to that of the low-resistive erbium silicide/Si contact case, which warrants a promising source/drain contact application for future high-performance metal-oxide-semiconductor field-effect transistors.

The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture

NASA Astrophysics Data System (ADS)

Geenen, F. A.; Solano, E.; Jordan-Sweet, J.; Lavoie, C.; Mocuta, C.; Detavernier, C.

2018-05-01

The controlled formation of silicide materials is an ongoing challenge to facilitate the electrical contact of Si-based transistors. Due to the ongoing miniaturisation of the transistor, the silicide is trending to ever-thinner thickness's. The corresponding increase in surface-to-volume ratio emphasises the importance of low-energetic interfaces. Intriguingly, the thickness reduction of nickel silicides results in an abrupt change in phase sequence. This paper investigates the sequence of the silicides phases and their preferential orientation with respect to the Si(001) substrate, for both "thin" (i.e., 9 nm) and "ultra-thin" (i.e., 3 nm) Ni films. Furthermore, as the addition of ternary elements is often considered in order to tailor the silicides' properties, additives of Al, Co, and Pt are also included in this study. Our results show that the first silicide formed is epitaxial θ-Ni2Si, regardless of initial thickness or alloyed composition. The transformations towards subsequent silicides are changed through the additive elements, which can be understood through solubility arguments and classical nucleation theory. The crystalline alignment of the formed silicides with the substrate significantly differs through alloying. The observed textures of sequential silicides could be linked through texture inheritance. Our study illustrates the nucleation of a new phase drive to reduce the interfacial energy at the silicide-substrate interface as well as at the interface with the silicide which is being consumed for these sub-10 nm thin films.

METHOD OF FORMING TANTALUM SILICIDE ON TANTALUM SURFACES

DOEpatents

Bowman, M.G.; Krikorian, N.H.

1961-10-01

A method is described for forming a non-corrosive silicide coating on tantalum. The coating is made through the heating of trirhenium silicides in contact with the tantalum object to approximately 1400 deg C at which temperature trirhenium silicide decomposes into rhenium and gaseous silicons. The silicon vapor reacts with the tantalum surface to form a tantalum silicide layer approximately 10 microns thick. (AEC)

Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, J.-G., E-mail: jglee36@kims.re.kr; Nagase, T.; Yasuda, H.

The synthesis of metal silicide at the metal/silicon oxide interface by electronic excitation was investigated using transmission electron microscopy. A platinum silicide, α-Pt{sub 2}Si, was successfully formed at the platinum/silicon oxide interface under 25–200 keV electron irradiation. This is of interest since any platinum silicide was not formed at the platinum/silicon oxide interface by simple thermal annealing under no-electron-irradiation conditions. From the electron energy dependence of the cross section for the initiation of the silicide formation, it is clarified that the silicide formation under electron irradiation was not due to a knock-on atom-displacement process, but a process induced by electronic excitation.more » It is suggested that a mechanism related to the Knotek and Feibelman mechanism may play an important role in silicide formation within the solid. Similar silicide formation was also observed at the palladium/silicon oxide and nickel/silicon oxide interfaces, indicating a wide generality of the silicide formation by electronic excitation.« less

Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact

PubMed Central

Lin, Yu-Ru; Tsai, Wan-Ting; Wu, Yung-Chun; Lin, Yu-Hsien

2017-01-01

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>107A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact. PMID:29112139

Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact.

PubMed

Lin, Yu-Ru; Tsai, Wan-Ting; Wu, Yung-Chun; Lin, Yu-Hsien

2017-11-07

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>10⁷A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact.

Initial Assessment of Environmental Barrier Coatings for the Prometheus Project

DOE Office of Scientific and Technical Information (OSTI.GOV)

M. Frederick

2005-12-15

Depending upon final design and materials selections, a variety of engineering solutions may need to be considered to avoid chemical degradation of components in a notional space nuclear power plant (SNPP). Coatings are one engineered approach that was considered. A comprehensive review of protective coating technology for various space-reactor structural materials is presented, including refractory metal alloys [molybdenum (Mo), tungsten (W), rhenium (Re), tantalum (Ta), and niobium (Nb)], nickel (Ni)-base superalloys, and silicon carbide (Sic). A summary description of some common deposition techniques is included. A literature survey identified coatings based on silicides or iridium/rhenium as the primary methods formore » environmental protection of refractory metal alloys. Modified aluminide coatings have been identified for superalloys and multilayer ceramic coatings for protection of Sic. All reviewed research focused on protecting structural materials from extreme temperatures in highly oxidizing conditions. Thermodynamic analyses indicate that some of these coatings may not be protective in the high-temperature, impure-He environment expected in a Prometheus reactor system. Further research is proposed to determine extensibility of these coating materials to less-oxidizing or neutral environments.« less

Dynamic observation on the growth behaviors in manganese silicide/silicon nanowire heterostructures.

PubMed

Hsieh, Yu-Hsun; Chiu, Chung-Hua; Huang, Chun-Wei; Chen, Jui-Yuan; Lin, Wan-Jhen; Wu, Wen-Wei

2015-02-07

Metal silicide nanowires (NWs) are very interesting materials with diverse physical properties. Among the silicides, manganese silicide nanostructures have attracted wide attention due to their several potential applications, including in microelectronics, optoelectronics, spintronics and thermoelectric devices. In this work, we exhibited the formation of pure manganese silicide and manganese silicide/silicon nanowire heterostructures through solid state reaction with line contacts between manganese pads and silicon NWs. Dynamical process and phase characterization were investigated by in situ transmission electron microscopy (in situ TEM) and spherical aberration corrected scanning transmission electron microscopy (Cs-corrected STEM), respectively. The growth dynamics of the manganese silicide phase under thermal effects were systematically studied. Additionally, Al2O3, serving as the surface oxide, altered the growth behavior of the MnSi nanowire, enhancing the silicide/Si epitaxial growth and effecting the diffusion process in the silicon nanowire as well. In addition to fundamental science, this significant study has great potential in advancing future processing techniques in nanotechnology and related applications.

Microwave absorption properties of Ni/(C, silicides) nanocapsules

PubMed Central

2012-01-01

The microwave absorption properties of Ni/(C, silicides) nanocapsules prepared by an arc discharge method have been studied. The composition and the microstructure of the Ni/(C, silicides) nanocapsules were determined by means of X-ray diffraction, X-ray photoelectric spectroscopy, and transmission electron microscope observations. Silicides, in the forms of SiOx and SiC, mainly exist in the shells of the nanocapsules and result in a large amount of defects at the ‘core/shell’ interfaces as well as in the shells. The complex permittivity and microwave absorption properties of the Ni/(C, silicides) nanocapsules are improved by the doped silicides. Compared with those of Ni/C nanocapsules, the positions of maximum absorption peaks of the Ni/(C, silicides) nanocapsules exhibit large red shifts. An electric dipole model is proposed to explain this red shift phenomenon. PMID:22548846

Theoretical investigation of silicide Schottky barrier detector integrated in horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguide.

PubMed

Zhu, Shiyang; Lo, G Q; Kwong, D L

2011-08-15

An ultracompact integrated silicide Schottky barrier detector (SBD) is designed and theoretically investigated to electrically detect the surface plasmon polariton (SPP) propagating along horizontal metal-insulator-silicon-insulator-metal nanoplasmonic slot waveguides at the telecommunication wavelength of 1550 nm. An ultrathin silicide layer inserted between the silicon core and the insulator, which can be fabricated precisely using the well-developed self-aligned silicide process, absorbs the SPP power effectively if a suitable silicide is chosen. Moreover, the Schottky barrier height in the silicide-silicon-silicide configuration can be tuned substantially by the external voltage through the Schottky effect owing to the very narrow silicon core. For a TaSi(2) detector with optimized dimensions, numerical simulation predicts responsivity of ~0.07 A/W, speed of ~60 GHz, dark current of ~66 nA at room temperature, and minimum detectable power of ~-29 dBm. The design also suggests that the device's size can be reduced and the overall performances will be further improved if a silicide with smaller permittivity is used. © 2011 Optical Society of America

Exploitation of a Self-limiting Process for Reproducible Formation of Ultrathin Ni(1-x)Pt(x) Silicide Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Z Zhang; B Yang; Y Zhu

This letter reports on a process scheme to obtain highly reproducible Ni{sub 1-x}Pt{sub x} silicide films of 3-6 nm thickness formed on a Si(100) substrate. Such ultrathin silicide films are readily attained by sputter deposition of metal films, metal stripping in wet chemicals, and final silicidation by rapid thermal processing. This process sequence warrants an invariant amount of metal intermixed with Si in the substrate surface region independent of the initial metal thickness, thereby leading to a self-limiting formation of ultrathin silicide films. The crystallographic structure, thickness, uniformity, and morphological stability of the final silicide films depend sensitively on themore » initial Pt fraction.« less

Surface morphology of erbium silicide

NASA Technical Reports Server (NTRS)

Lau, S. S.; Pai, C. S.; Wu, C. S.; Kuech, T. F.; Liu, B. X.

1982-01-01

The surface of rare-earth silicides (Er, Tb, etc.), formed by the reaction of thin-film metal layers with a silicon substrate, is typically dominated by deep penetrating, regularly shaped pits. These pits may have a detrimental effect on the electronic performance of low Schottky barrier height diodes utilizing such silicides on n-type Si. This study suggests that contamination at the metal-Si or silicide-Si interface is the primary cause of surface pitting. Surface pits may be reduced in density or eliminated entirely through either the use of Si substrate surfaces prepared under ultrahigh vacuum conditions prior to metal deposition and silicide formation or by means of ion irradiation techniques. Silicide layers formed by these techniques possess an almost planar morphology.

Columnar and subsurface silicide growth with novel molecular beam epitaxy techniques

NASA Technical Reports Server (NTRS)

Fathauer, R. W.; George, T.; Pike, W. T.

1992-01-01

We have found novel growth modes for epitaxial CoSi2 at high temperatures coupled with Si-rich flux ratios or low deposition rates. In the first of these modes, codeposition of metal and Si at 600-800 C with excess Si leads to the formation of epitaxial silicide columns surrounded by single-crystal Si. During the initial stages of the deposition, the excess Si grows homoepitaxially in between the silicide, which forms islands, so that the lateral growth of the islands is confined. Once a template layer is established by this process, columns of silicide form as a result of selective epitaxy of silicide on silicide and Si on Si. This growth process allows nanometer control over silicide particles in three dimensions. In the second of these modes, a columnar silicide seed layer is used as a template to nucleate subsurface growth of CoSi2. With a 100 nm Si layer covering CoSi2 seeds, Co deposited at 800C and 0.01 nm/s diffuses down to grow on the buried seeds rather than nucleating surface silicide islands. For thicker Si caps or higher deposition rates, the surface concentration of Co exceeds the critical concentration for nucleation of islands, preventing this subsurface growth mode from occurring. Using this technique, single-crystal layers of CoSi2 buried under single-crystal Si caps have been grown.

Microstructure evolution of the Ir-inserted Ni silicides with additional annealing

NASA Astrophysics Data System (ADS)

Yoon, Kijeong; Song, Ohsung

2009-02-01

Thermally-evaporated 10 nm-Ni/1 nm-Ir/(poly)Si structures were fabricated in order to investigate the thermal stability of Ir-inserted nickel silicide after additional annealing. The silicide samples underwent rapid thermal annealing at 300 ° C to 1200 ° C for 40 s, followed by 30 min annealing at the given RTA temperatures. Silicides suitable for the salicide process were formed on the top of the single crystal and polycrystalline silicon substrates, mimicking actives and gates. The sheet resistance was measured using a four-point probe. High resolution x-ray diffraction and Auger depth profiling were used for phase and chemical composition analysis, respectively. Transmission electron microscope and scanning probe microscope were used to determine the cross-section structure and surface roughness. The silicide, which formed on single crystal silicon substrate with surface agglomeration after additional annealing, could defer the transformation of Ni(Ir)Si to Ni(Ir)Si2 and was stable at temperatures up to 1200 °C. Moreover, the silicide thickness doubled. There were no outstanding changes in the silicide thickness on polycrystalline silicon. However, after additional annealing, the silicon-silicide mixing became serious and showed high resistance at temperatures >700 °C. Auger depth profiling confirmed the increased thickness of the silicide layers after additional annealing without a change in composition. For a single crystal silicon substrate, the sheet resistance increased slightly due to the significant increases in surface roughness caused by surface agglomeration after additional annealing. Otherwise, there were almost no changes in surface roughness on the polycrystalline silicon substrate. The Ir-inserted nickel monosilicide was able to maintain a low resistance in a wide temperature range and is considered suitable for the nano-thick silicide process.

On the size-dependent magnetism and all-optical magnetization switching of transition-metal silicide nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Glushkov, G. I.; Tuchin, A. V.; Popov, S. V.

Theoretical investigations of the electronic structure, synthesis, and all-optical magnetization switching of transition-metal silicide nanostructures are reported. The magnetic moment of the nanostructures is studied as a function of the silicide cluster size and configuration. The experimentally demonstrated magnetization switching of nanostructured nickel silicide by circularly polarized light makes it possible to create high-speed storage devices with high density data recording.

Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ozcan, Ahmet S., E-mail: asozcan@us.ibm.com; Lavoie, Christian; Jordan-Sweet, Jean

We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

Silicide surface phases on gold

NASA Technical Reports Server (NTRS)

Green, A. K.; Bauer, E.

1981-01-01

The crystalline silicide layers formed on (111) and (100) surfaces of Au films on various Si single-crystal substrates are studied by LEED and AES in conjunction with sputter-depth profiling as a function of annealing temperature. On the (111) surface, three basic silicide structures are obtained corresponding to layers of various thicknesses as obtained by different preparation conditions. The (100) surface shows only two different structures. None of the structures is compatible with the various bulk silicide structures deduced from X-ray diffraction. Using LEED as a criterion for the presence or absence of silicide on the surface, smaller layer thicknesses are obtained than reported previously on the basis of AES studies.

Microstructural investigation of nickel silicide thin films and the silicide-silicon interface using transmission electron microscopy.

PubMed

Bhaskaran, M; Sriram, S; Mitchell, D R G; Short, K T; Holland, A S; Mitchell, A

2009-01-01

This article discusses the results of transmission electron microscopy (TEM)-based investigation of nickel silicide (NiSi) thin films grown on silicon. Nickel silicide is currently used as the CMOS technology standard for local interconnects and in electrical contacts. Films were characterized with a range of TEM-based techniques along with glancing angle X-ray diffraction. The nickel silicide thin films were formed by vacuum annealing thin films of nickel (50 nm) deposited on (100) silicon. The cross-sectional samples indicated a final silicide thickness of about 110 nm. This investigation studied and reports on three aspects of the thermally formed thin films: the uniformity in composition of the film using jump ratio maps; the nature of the interface using high resolution imaging; and the crystalline orientation of the thin films using selected-area electron diffraction (SAED). The analysis highlighted uniform composition in the thin films, which was also substantiated by spectroscopy techniques; an interface exhibiting the desired abrupt transition from silicide to silicon; and desired and preferential crystalline orientation corresponding to stoichiometric NiSi, supported by glancing angle X-ray diffraction results.

High-Temperature Ceramic Matrix Composite with High Corrosion Resistance

DTIC Science & Technology

2010-06-02

ceramics with silicide additives may be explained in the following ways: 1) metal oxide, for example Ta2O5, formed at oxidation of TaSi2, in the...practically monophase ones, possibly, the additives of corresponding metals in silicide powders were present in insignificant amounts. For...boride with zirconium silicide we prepared the mixtures with 20 vol. % of silicide , the latter being hot pressed in the temperature range of 1600

Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lim, Chong Wee; Shin, Chan Soo; Gall, Daniel

A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

Formation of low resistivity titanium silicide gates in semiconductor integrated circuits

DOEpatents

Ishida, Emi [Sunnyvale, CA

1999-08-10

A method of forming a titanium silicide (69) includes the steps of forming a transistor having a source region (58), a drain region (60) and a gate structure (56) and forming a titanium layer (66) over the transistor. A first anneal is performed with a laser anneal at an energy level that causes the titanium layer (66) to react with the gate structure (56) to form a high resistivity titanium silicide phase (68) having substantially small grain sizes. The unreacted portions of the titanium layer (66) are removed and a second anneal is performed, thereby causing the high resistivity titanium silicide phase (68) to convert to a low resistivity titanium silicide phase (69). The small grain sizes obtained by the first anneal allow low resistivity titanium silicide phase (69) to be achieved at device geometries less than about 0.25 micron.

Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements.

PubMed

Polley, Craig M; Clarke, Warrick R; Simmons, Michelle Y

2011-10-03

We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C) required for maintaining atomic precision placement in donor-based devices, and it avoids the complications found with aluminium contacts which become superconducting at cryogenic measurement temperatures. Importantly, we show that the use of nickel silicide as an ohmic contact at low temperatures does not affect the thermal equilibration of carriers nor contribute to hysteresis in a magnetic field.

Thermochemical Compatibility and Oxidation Resistance of Advanced LWR Fuel Cladding

DOE PAGES

Besmann, T. M.; Yamamoto, Y.; Unocic, K. A.

2016-06-21

We assessed the thermochemical compatibility of potential replacement cladding materials for zirconium alloys in light water reactors. Considered were FeCrAl steel (similar to Kanthal APMT), Nb-1%Zr (similar to PWC-11), and a hybrid SiC-composite with a metallic barrier layer. The niobium alloy was also seen as requiring an oxidation protective layer, and a diffusion silicide was investigated. Metallic barrier layers for the SiC-composite reviewed included a FeCrAl alloy, Nb-1%Zr, and chromium. Thermochemical calculations were performed to determine oxidation behavior of the materials in steam, and for hybrid SiC-composites possible interactions between the metallic layer and SiC. Additionally, experimental exposures of SiC-alloymore » reaction couples at 673K, 1073K, and 1273K for 168 h in an inert atmosphere were made and microanalysis performed. Whereas all materials were determined to oxidize under higher oxygen partial pressures in the steam environment, these varied by material with expected protective oxides forming. Finally, the computed and experimental results indicate the formation of liquid phase eutectic in the FeCrAl-SiC system at the higher temperatures.« less

Repairing Chipped Silicide Coatings on Refractory Metal Substrates

NASA Technical Reports Server (NTRS)

Youngquist, Robert

2006-01-01

The space shuttle orbiter s reaction control system (RCS) is a series of small thrusters that use hypergolic fuels to orient the orbiter in space. The RCS thrusters are constructed from a special niobium-based alloy -- the C-103. This alloy retains excellent mechanical properties from cryogenic temperature all the way up to 2,500 F (1,370 C). C-103 is susceptible to rapid oxidation at elevated temperatures. The authors have developed two methods to repair damaged R512a coatings on C-103. For the first repair technique, metal foundries, semiconductor manufacturers, and many other industries have developed and routinely use coatings that can easily be painted on metal to protect it from corrosion, including oxidation, to temperatures in excess of 2,500 F (1,370 C). This first repair technique is considered somewhat temporary. The second repair technique is based on using the native coating material of the RCS nozzles. the chipped area is ground out and a "green" R512a coating is applied to the repair area. Both repair techniques can be applied for moderate protection until the permanent laser-repair technique is available to the repair area.

Improvement of heavy dopant doped Ni-silicide using ytterbium interlayer for nano-scale MOSFETS with an ultra shallow junction.

PubMed

Shin, Hong-Sik; Oh, Se-Kyung; Kang, Min-Ho; Li, Shi-Guang; Lee, Ga-Won; Lee, Hi-Deok

2011-07-01

In this paper, a novel Ni silicide with Yb interlayer (Yb/Ni/TiN) on a boron cluster (B18H22) implanted source/drain junction is proposed for the first time, and its thermal stability characteristics are analyzed in depth. The proposed Ni-silicide exhibits a wider RTP temperature window for uniform sheet resistance, surface roughness and better thermal stability than the conventional structure (Ni/TiN). In addition, the cross-sectional profile of the proposed Ni-silicide showed less agglomeration despite the high temperature post-silicidation annealing, and it can be said that the proposed structure was little dependence on the temperature post-silicidation annealing. The improvement of Ni silicide properties is analyzed and found to be due to the formation of the rare earth metal--NiSi (YbNi2Si2), whose peaks were confirmed by XRD. The junction leakage current of the p + -n junction with Yb/Ni/TiN and B18H22 implantation is smaller than that with Ni/TiN by almost one order of magnitude as well as improving the thermal stability of ultra shallow junction.

Characterisation of nickel silicide thin films by spectroscopy and microscopy techniques.

PubMed

Bhaskaran, M; Sriram, S; Holland, A S; Evans, P J

2009-01-01

This article discusses the formation and detailed materials characterisation of nickel silicide thin films. Nickel silicide thin films have been formed by thermally reacting electron beam evaporated thin films of nickel with silicon. The nickel silicide thin films have been analysed using Auger electron spectroscopy (AES) depth profiles, secondary ion mass spectrometry (SIMS), and Rutherford backscattering spectroscopy (RBS). The AES depth profile shows a uniform NiSi film, with a composition of 49-50% nickel and 51-50% silicon. No oxygen contamination either on the surface or at the silicide-silicon interface was observed. The SIMS depth profile confirms the existence of a uniform film, with no traces of oxygen contamination. RBS results indicate a nickel silicide layer of 114 nm, with the simulated spectra in close agreement with the experimental data. Atomic force microscopy and transmission electron microscopy have been used to study the morphology of the nickel silicide thin films. The average grain size and average surface roughness of these films was found to be 30-50 and 0.67 nm, respectively. The film surface has also been studied using Kikuchi patterns obtained by electron backscatter detection.

Effect of Chemistry and Particle Size on the Performance of Calcium Disilicide Primers. Part 1 - Synthesis of Calcium Silicide (CaSi2) by Rotary Atomization

DTIC Science & Technology

2010-02-01

Metallurgist. 45, 267, 2001. 10. Dodero, M. "Electrolytic Preparation of Calcium Silicide ," Compt. Rend.. 198, 1593, 1934. 11. Dodero, M...Allqem. Chem.. 242, 117, 1939. 13. Yamaguchi, Y. and Hayakawa, Y., "The Preparation of Calcium Silicide by Reacting Solid Silicon Carbide and...SYNTHESIS OF CALCIUM SILICIDE (CaSi2) BY ROTARY ATOMIZATION Paul E. Anderson Kin Yee Eugene Homentowski Gartung Cheng Neha Mehta Gary Chen U.S

Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ozcan, Ahmet S.; Wall, Donald; Jordan-Sweet, Jean

Using temperature controlled Si and C ion implantation, we studied the effects of pre-amorphization implantation on NiPt alloy silicide phase formation. In situ synchrotron x-ray diffraction and resistance measurements were used to monitor phase and morphology evolution in silicide films. Results show that substrate amorphization strongly modulate the nucleation of silicide phases, regardless of implant species. However, morphological stability of the thin films is mainly enhanced by C addition, independently of the amorphization depth.

Monolithic porous magnesium silicide.

PubMed

Hayati-Roodbari, N; Berger, R J F; Bernardi, J; Kinge, S; Hüsing, N; Elsaesser, M S

2017-07-11

Macroporous magnesium silicide monoliths were successfully prepared by a two-step synthesis procedure. The reaction of gaseous magnesium vapor with macro-/mesoporous silicon, which was generated from hierarchically organized meso-/macroporous silica by a magnesiothermic reduction reaction, resulted in monolithic magnesium silicide with a cellular, open macroporous structure. By adjusting the reaction conditions, such as experimental set-up, temperature and time, challenges namely loss of porosity or phase purity of Mg 2 Si were addressed and monolithic magnesium silicide with a cellular network builtup was obtained.

Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications.

PubMed

Ratajczak, J; Łaszcz, A; Czerwinski, A; Katcki, J; Phillipp, F; Van Aken, P A; Reckinger, N; Dubois, E

2010-03-01

In this paper, we present results of transmission electron microscopy studies on erbium silicide structures fabricated under various thermal conditions. A titanium cap has been used as a protective layer against oxidation during rapid thermal annealing of an erbium layer in a temperature range of 300-700 degrees C. Both layers (200 nm Ti and 25 nm Er) were deposited by electron-beam sputtering. The investigations have shown that the transformation of the 25-nm-thick erbium into erbium silicide is completed after annealing at 500 degrees C. At higher temperatures, the formation of a titanium silicide layer above erbium silicide is observed. The lowest Schottky barrier has been measured in the sample annealed at 700 degrees C.

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

PubMed

Liu, Zhihong; Zhang, Hui; Wang, Lei; Yang, Deren

2008-09-17

Nickel silicide nanowire arrays have been achieved by the decomposition of SiH(4) on Ni foil at 650 °C. It is indicated that the nickel silicide nanowires consist of roots with diameter of about 100-200 nm and tips with diameter of about 10-50 nm. A Ni diffusion controlled mechanism is proposed to explain the formation of the nickel silicide nanowires. Field emission measurement shows that the turn-on field of the nickel silicide nanowire arrays is low, at about 3.7 V µm(-1), and the field enhancement factor is as high as 4280, so the arrays have promising applications as emitters.

Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements

PubMed Central

2011-01-01

We examine nickel silicide as a viable ohmic contact metallization for low-temperature, low-magnetic-field transport measurements of atomic-scale devices in silicon. In particular, we compare a nickel silicide metallization with aluminium, a common ohmic contact for silicon devices. Nickel silicide can be formed at the low temperatures (<400°C) required for maintaining atomic precision placement in donor-based devices, and it avoids the complications found with aluminium contacts which become superconducting at cryogenic measurement temperatures. Importantly, we show that the use of nickel silicide as an ohmic contact at low temperatures does not affect the thermal equilibration of carriers nor contribute to hysteresis in a magnetic field. PMID:21968083

Plasmonic-Electronic Transduction

DTIC Science & Technology

2012-01-31

including metal silicides (Pt-, Pd-, Ni-, W- silicides ), semimetals (Sb, Bi, graphite), doped-semiconductors (Si, CuInSe), and conducting polymers... silicides and doped silicon,” J. W. Cleary, R. E. Peale, D. J. Shelton, G. D. Boreman, C. W. Smith, M. Ishigami, R. Soref, A. Drehman, W.R. Buchwald

Valence Band Control of Metal Silicide Films via Stoichiometry.

PubMed

Streller, Frank; Qi, Yubo; Yang, Jing; Mangolini, Filippo; Rappe, Andrew M; Carpick, Robert W

2016-07-07

The unique electronic and mechanical properties of metal silicide films render them interesting for advanced materials in plasmonic devices, batteries, field-emitters, thermoelectric devices, transistors, and nanoelectromechanical switches. However, enabling their use requires precisely controlling their electronic structure. Using platinum silicide (PtxSi) as a model silicide, we demonstrate that the electronic structure of PtxSi thin films (1 ≤ x ≤ 3) can be tuned between metallic and semimetallic by changing the stoichiometry. Increasing the silicon content in PtxSi decreases the carrier density according to valence band X-ray photoelectron spectroscopy and theoretical density of states (DOS) calculations. Among all PtxSi phases, Pt3Si offers the highest DOS due to the modest shift of the Pt5d manifold away from the Fermi edge by only 0.5 eV compared to Pt, rendering it promising for applications. These results, demonstrating tunability of the electronic structure of thin metal silicide films, suggest that metal silicides can be designed to achieve application-specific electronic properties.

Improved high-temperature silicide coatings

NASA Technical Reports Server (NTRS)

Klopp, W. D.; Stephens, J. R.; Stetson, A. R.; Wimber, R. T.

1969-01-01

Special technique for applying silicide coatings to refractory metal alloys improves their high-temperature protective capability. Refractory metal powders mixed with a baked-out organic binder and sintered in a vacuum produces a porous alloy layer on the surface. Exposing the layer to hot silicon converts it to a silicide.

Formation, structure, and orientation of gold silicide on gold surfaces

NASA Technical Reports Server (NTRS)

Green, A. K.; Bauer, E.

1976-01-01

The formation of gold silicide on Au films evaporated onto Si(111) surfaces is studied by Auger electron spectroscopy (AES) and low-energy electron diffraction (LEED). Surface condition, film thickness, deposition temperature, annealing temperature, and heating rate during annealing are varied. Several oriented crystalline silicide layers are observed.

Low-loss silicide/silicon plasmonic ribbon waveguides for mid- and far-infrared applications.

PubMed

Cho, Sang-Yeon; Soref, Richard A

2009-06-15

We report low-loss silicide/silicon plasmonic ribbon waveguides for mid- and far-IR applications. The composite modes in silicide ribbon waveguides offer a low-loss and highly confined mode profile, giving excellent plasmon waveguiding for long-wavelength applications. The calculated propagation loss of the composite long-range surface-plasmon polariton mode at a wavelength of 100 microm is 2.18 dB/cm with a mode height of less than 30 microm. The results presented provide important design guidelines for silicide/Si plasmon waveguides.

ITEP MEVVA ion beam for rhenium silicide production.

PubMed

Kulevoy, T; Gerasimenko, N; Seleznev, D; Kropachev, G; Kozlov, A; Kuibeda, R; Yakushin, P; Petrenko, S; Medetov, N; Zaporozhan, O

2010-02-01

The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.

Manganese silicide nanowires on Si(001).

PubMed

Liu, H J; Owen, J H G; Miki, K; Renner, Ch

2011-05-04

A method for promoting the growth of manganese silicide nanowires on Si(001) at 450 °C is described. The anisotropic surface stress generated by bismuth nanolines blocks the formation of embedded structures and stabilizes the nucleation of manganese silicide islands which grow in a preferred direction, forming nanowires with a band gap of approximately 0.6 eV, matching the reported band gap of MnSi(1.7). This method may also provide a means to form silicide nanowires of other metals where they do not otherwise form. © 2011 IOP Publishing Ltd

Nickel/Platinum Dual Silicide Axial Nanowire Heterostructures with Excellent Photosensor Applications.

PubMed

Wu, Yen-Ting; Huang, Chun-Wei; Chiu, Chung-Hua; Chang, Chia-Fu; Chen, Jui-Yuan; Lin, Ting-Yi; Huang, Yu-Ting; Lu, Kuo-Chang; Yeh, Ping-Hung; Wu, Wen-Wei

2016-02-10

Transition metal silicide nanowires (NWs) have attracted increasing attention as they possess advantages of both silicon NWs and transition metals. Over the past years, there have been reported with efforts on one silicide in a single silicon NW. However, the research on multicomponent silicides in a single silicon NW is still rare, leading to limited functionalities. In this work, we successfully fabricated β-Pt2Si/Si/θ-Ni2Si, β-Pt2Si/θ-Ni2Si, and Pt, Ni, and Si ternary phase axial NW heterostructures through solid state reactions at 650 °C. Using in situ transmission electron microscope (in situ TEM), the growth mechanism of silicide NW heterostructures and the diffusion behaviors of transition metals were systematically studied. Spherical aberration corrected scanning transmission electron microscope (Cs-corrected STEM) equipped with energy dispersive spectroscopy (EDS) was used to analyze the phase structure and composition of silicide NW heterostructures. Moreover, electrical and photon sensing properties for the silicide nanowire heterostructures demonstrated promising applications in nano-optoeletronic devices. We found that Ni, Pt, and Si ternary phase nanowire heterostructures have an excellent infrared light sensing property which is absent in bulk Ni2Si or Pt2Si. The above results would benefit the further understanding of heterostructured nano materials.

Process for recovering niobium from uranium-niobium alloys

DOEpatents

Wallace, Steven A.; Creech, Edward T.; Northcutt, Walter G.

1983-01-01

Niobium is recovered from scrap uranium-niobium alloy by melting the scrap with tin, solidifying the billet thus formed, heating the billet to combine niobium with tin therein, placing the billet in hydrochloric acid to dissolve the uranium and leave an insoluble residue of niobium stannide, then separating the niobium stannide from the acid.

Raman scattering from rapid thermally annealed tungsten silicide

NASA Technical Reports Server (NTRS)

Kumar, Sandeep; Dasgupta, Samhita; Jackson, Howard E.; Boyd, Joseph T.

1987-01-01

Raman scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films have been formed by rapid thermal annealing of thin tungsten films sputter deposited on silicon substrates. The Raman data are interpreted by using data from resistivity measurements, Auger and Rutherford backscattering measurements, and scanning electron microscopy.

Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing

NASA Astrophysics Data System (ADS)

Kal, S.; Kasko, I.; Ryssel, H.

1995-10-01

The influence of ion-beam mixing on ultra-thin cobalt silicide (CoSi2) formation was investigated by characterizing the ion-beam mixed and unmixed CoSi2 films. A Ge+ ion-implantation through the Co film prior to silicidation causes an interface mixing of the cobalt film with the silicon substrate and results in improved silicide-to-silicon interface roughness. Rapid thermal annealing was used to form Ge+ ion mixed and unmixed thin CoSi2 layer from 10 nm sputter deposited Co film. The silicide films were characterized by secondary neutral mass spectroscopy, x-ray diffraction, tunneling electron microscopy (TEM), Rutherford backscattering, and sheet resistance measurements. The experi-mental results indicate that the final rapid thermal annealing temperature should not exceed 800°C for thin (<50 nm) CoSi2 preparation. A comparison of the plan-view and cross-section TEM micrographs of the ion-beam mixed and unmixed CoSi2 films reveals that Ge+ ion mixing (45 keV, 1 × 1015 cm-2) produces homogeneous silicide with smooth silicide-to-silicon interface.

Effect of silicide/silicon hetero-junction structure on thermal conductivity and Seebeck coefficient.

PubMed

Choi, Wonchul; Park, Young-Sam; Hyun, Younghoon; Zyung, Taehyoung; Kim, Jaehyeon; Kim, Soojung; Jeon, Hyojin; Shin, Mincheol; Jang, Moongyu

2013-12-01

We fabricated a thermoelectric device with a silicide/silicon laminated hetero-structure by using RF sputtering and rapid thermal annealing. The device was observed to have Ohmic characteristics by I-V measurement. The temperature differences and Seebeck coefficients of the proposed silicide/silicon laminated and bulk structure were measured. The laminated thermoelectric device shows suppression of heat flow from the hot to cold side. This is supported by the theory that the atomic mass difference between silicide and silicon creates a scattering center for phonons. The major impact of our work is that phonon transmission is suppressed at the interface between silicide and silicon without degrading electrical conductivity. The estimated thermal conductivity of the 3-layer laminated device is 126.2 +/- 3.7 W/m. K. Thus, by using the 3-layer laminated structure, thermal conductivity is reduced by around 16% compared to bulk silicon. However, the Seebeck coefficient of the thermoelectric device is degraded compared to that of bulk silicon. It is understood that electrical conductivity is improved by using silicide as a scattering center.

Epitaxial insertion of gold silicide nanodisks during the growth of silicon nanowires.

PubMed

Um, Han-Don; Jee, Sang-Won; Park, Kwang-Tae; Jung, Jin-Young; Guo, Zhongyi; Lee, Jung-Ho

2011-07-01

Nanodisk-shaped, single-crystal gold silicide heterojunctions were inserted into silicon nanowires during vapor-liquid-solid growth using Au as a catalyst within a specific range of chlorine-to-hydrogen atomic ratio. The mechanism of nanodisk formation has been investigated by changing the source gas ratio of SiCl4 to H2. We report that an over-supply of silicon into the Au-Si liquid alloy leads to highly supersaturated solution and enhances the precipitation of Au in the silicon nanowires due to the formation of unstable phases within the liquid alloy. It is shown that the gold precipitates embedded in the silicon nanowires consisted of a metastable gold silicide. Interestingly, faceting of gold silicide was observed at the Au/Si interfaces, and silicon nanowires were epitaxially grown on the top of the nanodisk by vapor-liquid-solid growth. High resolution transmission electron microscopy confirmed that gold silicide nanodisks are epitaxially connected to the silicon nanowires in the direction of growth direction. These gold silicide nanodisks would be useful as nanosized electrical junctions for future applications in nanowire interconnections.

Silicide/Silicon Hetero-Junction Structure for Thermoelectric Applications.

PubMed

Jun, Dongsuk; Kim, Soojung; Choi, Wonchul; Kim, Junsoo; Zyung, Taehyoung; Jang, Moongyu

2015-10-01

We fabricated silicide/silicon hetero-junction structured thermoelectric device by CMOS process for the reduction of thermal conductivity with the scatterings of phonons at silicide/silicon interfaces. Electrical conductivities, Seebeck coefficients, power factors, and temperature differences are evaluated using the steady state analysis method. Platinum silicide/silicon multilayered structure showed an enhanced Seebeck coefficient and power factor characteristics, which was considered for p-leg element. Also, erbium silicide/silicon structure showed an enhanced Seebeck coefficient, which was considered for an n-leg element. Silicide/silicon multilayered structure is promising for thermoelectric applications by reducing thermal conductivity with an enhanced Seebeck coefficient. However, because of the high thermal conductivity of the silicon packing during thermal gradient is not a problem any temperature difference. Therefore, requires more testing and analysis in order to overcome this problem. Thermoelectric generators are devices that based on the Seebeck effect, convert temperature differences into electrical energy. Although thermoelectric phenomena have been used for heating and cooling applications quite extensively, it is only in recent years that interest has increased in energy generation.

NMOS contact resistance reduction with selenium implant into NiPt silicide

NASA Astrophysics Data System (ADS)

Rao, K. V.; Khaja, F. A.; Ni, C. N.; Muthukrishnan, S.; Darlark, A.; Lei, J.; Peidous, I.; Brand, A.; Henry, T.; Variam, N.; Erokhin, Y.

2012-11-01

A 25% reduction in NMOS contact resistance (Rc) was achieved by Selenium implantation into NiPt silicide film in VIISta Trident high-current single-wafer implanter. The Trident implanter is designed for shallow high-dose implants with high beam currents to maintain high throughput (for low CoO), with improved micro-uniformity and no energy contamination. The integration of Se implant was realized using a test chip dedicated to investigating silicide/junction related electrical properties and testable after silicidation. The silicide module processes were optimized, including the pre-clean (prior to RF PVD NiPt dep) and pre- and post-implant anneals. A 270°C soak anneal was used for RTP1, whereas a msec laser anneal was employed for RTP2 with sufficient process window (800-850°C), while maintaining excellent junction characteristics without Rs degradation.

Structural and electrochemical properties of nanostructured nickel silicides by reduction and silicification of high-surface-area nickel oxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Xiao; Zhang, Bingsen; Li, Chuang

Graphical abstract: Nanostructured nickel silicides have been synthesized by reduction and silification of high-surface-area nickel oxide, and exhibited remarkably like-noble metal property, lower electric resistivity, and ferromagnetism at room temperature. Highlights: Black-Right-Pointing-Pointer NiSi{sub x} have been prepared by reduction and silification of high-surface-area NiO. Black-Right-Pointing-Pointer The structure of nickel silicides changed with increasing reaction temperature. Black-Right-Pointing-Pointer Si doping into nickel changed the magnetic properties of metallic nickel. Black-Right-Pointing-Pointer NiSi{sub x} have remarkably lower electric resistivity and like-noble metal property. -- Abstract: Nanostructured nickel silicides have been prepared by reduction and silicification of high-surface-area nickel oxide (145 m{sup 2} g{sup -1})more » produced via precipitation. The prepared materials were characterized by nitrogen adsorption, X-ray diffraction, thermal analysis, FT-IR spectroscopy, scanning electron microscopy, transmission electron microscopy, magnetic and electrochemical measurements. The nickel silicide formation involves the following sequence: NiO (cubic) {yields} Ni (cubic) {yields} Ni{sub 2}Si (orthorhombic) {yields} NiSi (orthorhombic) {yields} NiSi{sub 2} (cubic), with particles growing from 13.7 to 21.3 nm. The nickel silicides are ferromagnetic at room temperature, and their saturation magnetization values change drastically with the increase of Si content. Nickel silicides have remarkably low electrical resistivity and noble metal-like properties because of a constriction of the Ni d band and an increase of the electronic density of states. The results suggest that such silicides are promising candidates as inexpensive yet functional materials for applications in electrochemistry as well as catalysis.« less

Investigation of silicide-induced-dopant-activation for steep tunnel junction in tunnel field effect transistor (TFET)

NASA Astrophysics Data System (ADS)

Kim, Sihyun; Kwon, Dae Woong; Park, Euyhwan; Lee, Junil; Lee, Roongbin; Lee, Jong-Ho; Park, Byung-Gook

2018-02-01

Numerous researches for making steep tunnel junction within tunnel field-effect transistor (TFET) have been conducted. One of the ways to make an abrupt junction is source/drain silicidation, which uses the phenomenon often called silicide-induced-dopant-segregation. It is revealed that the silicide process not only helps dopants to pile up adjacent to the metal-silicon alloy, also induces the dopant activation, thereby making it possible to avoid additional high temperature process. In this report, the availability of dopant activation induced by metal silicide process was thoroughly investigated by diode measurement and device simulation. Metal-silicon (MS) diodes having p+ and n+ silicon formed on the p- substrate exhibit the characteristics of ohmic and pn diodes respectively, for both the samples with and without high temperature annealing. The device simulation for TFETs with dopant-segregated source was also conducted, which verified enhanced DC performance.

Controlled assembly of graphene-capped nickel, cobalt and iron silicides

PubMed Central

Vilkov, O.; Fedorov, A.; Usachov, D.; Yashina, L. V.; Generalov, A. V.; Borygina, K.; Verbitskiy, N. I.; Grüneis, A.; Vyalikh, D. V.

2013-01-01

The unique properties of graphene have raised high expectations regarding its application in carbon-based nanoscale devices that could complement or replace traditional silicon technology. This gave rise to the vast amount of researches on how to fabricate high-quality graphene and graphene nanocomposites that is currently going on. Here we show that graphene can be successfully integrated with the established metal-silicide technology. Starting from thin monocrystalline films of nickel, cobalt and iron, we were able to form metal silicides of high quality with a variety of stoichiometries under a Chemical Vapor Deposition grown graphene layer. These graphene-capped silicides are reliably protected against oxidation and can cover a wide range of electronic materials/device applications. Most importantly, the coupling between the graphene layer and the silicides is rather weak and the properties of quasi-freestanding graphene are widely preserved. PMID:23835625

Highly efficient phosphorescent organic light-emitting diode with a nanometer-thick Ni silicide/polycrystalline p-Si composite anode.

PubMed

Li, Y Z; Wang, Z L; Luo, H; Wang, Y Z; Xu, W J; Ran, G Z; Qin, G G; Zhao, W Q; Liu, H

2010-07-19

A phosphorescent organic light-emitting diode (PhOLED) with a nanometer-thick (approximately 10 nm) Ni silicide/ polycrystalline p-Si composite anode is reported. The structure of the PhOLED is Al mirror/ glass substrate / Si isolation layer / Ni silicide / polycrystalline p-Si/ V(2)O(5)/ NPB/ CBP: (ppy)(2)Ir(acac)/ Bphen/ Bphen: Cs(2)CO(3)/ Sm/ Au/ BCP. In the composite anode, the Ni-induced polycrystalline p-Si layer injects holes into the V(2)O(5)/ NPB, and the Ni silicide layer reduces the sheet resistance of the composite anode and thus the series resistance of the PhOLED. By adopting various measures for specially optimizing the thickness of the Ni layer, which induces Si crystallization and forms a Ni silicide layer of appropriate thickness, the highest external quantum efficiency and power conversion efficiency have been raised to 26% and 11%, respectively.

Metallic rare-earth silicide nanowires on silicon surfaces.

PubMed

Dähne, Mario; Wanke, Martina

2013-01-09

The formation, atomic structure, and electronic properties of self-assembled rare-earth silicide nanowires on silicon surfaces were studied by scanning tunneling microscopy and angle-resolved photoelectron spectroscopy. Metallic dysprosium and erbium silicide nanowires were observed on both the Si(001) and Si(557) surfaces. It was found that they consist of hexagonal rare-earth disilicides for both surface orientations. On Si(001), the nanowires are characterized by a one-dimensional band structure, while the electronic dispersion is two-dimensional for the nanowires formed on Si(557). This behavior is explained by the different orientations of the hexagonal c axis of the silicide leading to different conditions for the carrier confinement. By considering this carrier confinement it is demonstrated how the one-dimensional band structure of the nanowires on Si(001) can be derived from the two-dimensional one of the silicide monolayer on Si(111).

Magnetic Binary Silicide Nanostructures.

PubMed

Goldfarb, Ilan; Cesura, Federico; Dascalu, Matan

2018-05-02

In spite of numerous advantageous properties of silicides, magnetic properties are not among them. Here, the magnetic properties of epitaxial binary silicide nanostructures are discussed. The vast majority of binary transition-metal silicides lack ferromagnetic order in their bulk-size crystals. Silicides based on rare-earth metals are usually weak ferromagnets or antiferromagnets, yet both groups tend to exhibit increased magnetic ordering in low-dimensional nanostructures, in particular at low temperatures. The origin of this surprising phenomenon lies in undercoordinated atoms at the nanostructure extremities, such as 2D (surfaces/interfaces), 1D (edges), and 0D (corners) boundaries. Uncompensated superspins of edge atoms increase the nanostructure magnetic shape anisotropy to the extent where it prevails over its magnetocrystalline counterpart, thus providing a plausible route toward the design of a magnetic response from nanostructure arrays in Si-based devices, such as bit-patterned magnetic recording media and spin injectors. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Process for producing an aggregate suitable for inclusion into a radiation shielding product

DOEpatents

Lessing, Paul A.; Kong, Peter C.

2000-01-01

The present invention is directed to methods for converting depleted uranium hexafluoride to a stable depleted uranium silicide in a one-step reaction. Uranium silicide provides a stable aggregate material that can be added to concrete to increase the density of the concrete and, consequently, shield gamma radiation. As used herein, the term "uranium silicide" is defined as a compound generically having the formula U.sub.x Si.sub.y, wherein the x represents the molecules of uranium and the y represent the molecules of silicon. In accordance with the present invention, uranium hexafluoride is converted to a uranium silicide by contacting the uranium hexafluoride with a silicon-containing material at a temperature in a range between about 1450.degree. C. and about 1750.degree. C. The stable depleted uranium silicide is included as an aggregate in a radiation shielding product, such as a concrete product.

Method of nitriding niobium to form a superconducting surface

DOEpatents

Kelley, Michael J.; Klopf, John Michael; Singaravelu, Senthilaraja

2014-08-19

A method of forming a delta niobium nitride .delta.-NbN layer on the surface of a niobium object including cleaning the surface of the niobium object; providing a treatment chamber; placing the niobium object in the treatment chamber; evacuating the chamber; passing pure nitrogen into the treatment chamber; focusing a laser spot on the niobium object; delivering laser fluences at the laser spot until the surface of the niobium object reaches above its boiling temperature; and rastering the laser spot over the surface of the niobium object.

Core-shell chromium silicide-silicon nanopillars: a contact material for future nanosystems.

PubMed

Chang, Mu-Tung; Chen, Chih-Yen; Chou, Li-Jen; Chen, Lih-Juann

2009-11-24

Chromium silicide nanostructures are fabricated inside silicon nanopillars grown by the vapor-liquid-solid mechanism. The remarkable field-emission behavior of these nanostructures results from extensive improvement of carrier transport due to the reduced energy barrier between the metal and semiconductor layers. The results warrant consideration of chromium silicide as a potentially important contact material in future nanosystems.

The deposition of aluminide and silicide coatings on γ-TiAl using the halide-activated pack cementation method

NASA Astrophysics Data System (ADS)

Munro, T. C.; Gleeson, B.

1996-12-01

The halide-activated pack cementation method (HAPC) was utilized to deposit aluminide and silicide coatings on nominally stoichiometric γ-TiAl. The deposition temperature was 1000°C and deposition times ranged from 2 to 12 hours. The growth rates of the coatings were diffusion controlled, with the rate of aluminide growth being about a factor of 2 greater than that of silicide growth. The aluminide coating was inward growing and consisted of a thick, uniform outer layer of TiAl3 and a thin inner layer of TiAl2, with the rate-controlling step being the diffusion of aluminum from the pack into the substrate. Annealing experiments at 1100 °C showed that the interdiffusion between the aluminide coating and the γ-TiAl substrate was rapid. In contrast to the aluminide coating, the silicide coating was nonuniform and porous, consisting primarily of TiSi2, TiSi, and Ti5Si4, with the rate-controlling step for the coating growth believed to be the diffusion of aluminum into the γ-TiAl ahead of the silicide/γ-TiAl interface. The microstructural evolution of the aluminide and silicide coating structures is discussed qualitatively.

Metal silicide/poly-Si Schottky diodes for uncooled microbolometers.

PubMed

Chizh, Kirill V; Chapnin, Valery A; Kalinushkin, Victor P; Resnik, Vladimir Y; Storozhevykh, Mikhail S; Yuryev, Vladimir A

2013-04-17

: Nickel silicide Schottky diodes formed on polycrystalline Si 〈P〉 films are proposed as temperature sensors of monolithic uncooled microbolometer infrared focal plane arrays. The structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as a multi-phase compound composed of 20% to 40% of Ni3Si, 30% to 60% of Ni2Si, and 10% to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from about 100 to about 20 for the temperature increasing from 22â"ƒ to 70â"ƒ; they exceed 1,000 at 80 K. A barrier of around 0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-electromotive force spectra at 80 K and attributed to the Ni silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3%â"ƒ to 0.6%/â"ƒ for forward bias and around 2.5%/â"ƒ for reverse bias of the diodes.

Silicide Nanowires for Low-Resistance CMOS Transistor Contacts.

NASA Astrophysics Data System (ADS)

Zollner, Stefan

2007-03-01

Transition metal (TM) silicide nanowires are used as contacts for modern CMOS transistors. (Our smallest wires are ˜20 nm thick and ˜50 nm wide.) While much research on thick TM silicides was conducted long ago, materials perform differently at the nanoscale. For example, the usual phase transformation sequences (e.g., Ni, Ni2Si, NiSi, NiSi2) for the reaction of thick metal films on Si no longer apply to nanostructures, because the surface and interface energies compete with the bulk energy of a given crystal structure. Therefore, a NiSi film will agglomerate into hemispherical droplets of NiSi by annealing before it reaches the lowest-energy (NiSi2) crystalline structure. These dynamics can be tuned by addition of impurities (such as Pt in Ni). The Si surface preparation is also a more important factor for nanowires than for silicidation of thick TM films. Ni nanowires formed on Si surfaces that were cleaned and amorphized by sputtering with Ar ions have a tendency to form NiSi2 pyramids (``spikes'') even at moderate temperatures (˜400^oC), while similar Ni films formed on atomically clean or hydrogen-terminated Si form uniform NiSi nanowires. Another issue affecting TM silicides is the barrier height between the silicide contact and the silicon transistor. For most TM silicides, the Fermi level of the silicide is aligned with the center of the Si band gap. Therefore, silicide contacts experience Schottky barrier heights of around 0.5 eV for both n-type and p-type Si. The resulting contact resistance becomes a significant term for the overall resistance of modern CMOS transistors. Lowering this contact resistance is an important goal in CMOS research. New materials are under investigation (for example PtSi, which has a barrier height of only 0.3 eV to p-type Si). This talk will describe recent results, with special emphasis on characterization techniques and electrical testing useful for the development of silicide nanowires for CMOS contacts. In collaboration with: P. Grudowski, D. Jawarani, R. Garcia, M.L. Kottke, R.B. Gregory, X.-D. Wang, D. Theodore, P. Fejes, W.J. Taylor, B.Y. Nguyen, C. Capasso, M. Raymond, D. Denning, K. Chang, R. Noble, M. Jahanbani, S. Bolton, P. Crabtree, D. Goedeke, M. Rossow, M. Chowdhury, H. Desjardins, A.Thean.

Process for recovering niobium from uranium-niobium alloys

DOEpatents

Wallace, S.A.; Creech, E.T.; Northcutt, W.G.

1982-09-27

Niobium is recovered from scrap uranium-niobium alloy by melting the scrap with tin, solidifying the billet thus formed, heating the billet to combine niobium with tin therein, placing the billet in hydrochloric acid to dissolve the uranium and form a precipitate of niobium stannide, then separating the precipitate from the acid.

Template-directed atomically precise self-organization of perfectly ordered parallel cerium silicide nanowire arrays on Si(110)-16 × 2 surfaces.

PubMed

Hong, Ie-Hong; Liao, Yung-Cheng; Tsai, Yung-Feng

2013-11-05

The perfectly ordered parallel arrays of periodic Ce silicide nanowires can self-organize with atomic precision on single-domain Si(110)-16 × 2 surfaces. The growth evolution of self-ordered parallel Ce silicide nanowire arrays is investigated over a broad range of Ce coverages on single-domain Si(110)-16 × 2 surfaces by scanning tunneling microscopy (STM). Three different types of well-ordered parallel arrays, consisting of uniformly spaced and atomically identical Ce silicide nanowires, are self-organized through the heteroepitaxial growth of Ce silicides on a long-range grating-like 16 × 2 reconstruction at the deposition of various Ce coverages. Each atomically precise Ce silicide nanowire consists of a bundle of chains and rows with different atomic structures. The atomic-resolution dual-polarity STM images reveal that the interchain coupling leads to the formation of the registry-aligned chain bundles within individual Ce silicide nanowire. The nanowire width and the interchain coupling can be adjusted systematically by varying the Ce coverage on a Si(110) surface. This natural template-directed self-organization of perfectly regular parallel nanowire arrays allows for the precise control of the feature size and positions within ±0.2 nm over a large area. Thus, it is a promising route to produce parallel nanowire arrays in a straightforward, low-cost, high-throughput process.

Template-directed atomically precise self-organization of perfectly ordered parallel cerium silicide nanowire arrays on Si(110)-16 × 2 surfaces

PubMed Central

2013-01-01

The perfectly ordered parallel arrays of periodic Ce silicide nanowires can self-organize with atomic precision on single-domain Si(110)-16 × 2 surfaces. The growth evolution of self-ordered parallel Ce silicide nanowire arrays is investigated over a broad range of Ce coverages on single-domain Si(110)-16 × 2 surfaces by scanning tunneling microscopy (STM). Three different types of well-ordered parallel arrays, consisting of uniformly spaced and atomically identical Ce silicide nanowires, are self-organized through the heteroepitaxial growth of Ce silicides on a long-range grating-like 16 × 2 reconstruction at the deposition of various Ce coverages. Each atomically precise Ce silicide nanowire consists of a bundle of chains and rows with different atomic structures. The atomic-resolution dual-polarity STM images reveal that the interchain coupling leads to the formation of the registry-aligned chain bundles within individual Ce silicide nanowire. The nanowire width and the interchain coupling can be adjusted systematically by varying the Ce coverage on a Si(110) surface. This natural template-directed self-organization of perfectly regular parallel nanowire arrays allows for the precise control of the feature size and positions within ±0.2 nm over a large area. Thus, it is a promising route to produce parallel nanowire arrays in a straightforward, low-cost, high-throughput process. PMID:24188092

Fundamental Studies and Isolation Strategies for Metal Compound Nanoclusters

DTIC Science & Technology

2009-02-28

probe nanocluster structure, bonding and stability, metal oxide, carbide and silicide clusters with up to 50 atoms were investigated with mass...transition metal compounds (carbides, oxides, silicides ) that are expected to have high stability, an essential property for their isolation...Metal carbide, oxide and silicide nanoclusters are studied in the size range from a few up to about 300 atoms. New infrared laser spectroscopy

The Longwave Silicon Chip - Integrated Plasma-Photonics in Group IV And III-V Semiconductors

DTIC Science & Technology

2013-10-01

infrared applications; SiGeSn heterostructure photonics; group IV plasmonics with silicides , germanicides, doped Si, Ge or GeSn; Franz-Keldysh...SPP waveguide in which localized silicide or germanicide “conductors” are introduced to give local plasmonic confinement. Therefore, guided-wave...reconfigurable integrated optoelectronics, electro-optical logic in silicon, silicides for group IV plasmonics, reviews of third-order nonlinear optical

Kinetic manipulation of silicide phase formation in Si nanowire templates.

PubMed

Chen, Yu; Lin, Yung-Chen; Zhong, Xing; Cheng, Hung-Chieh; Duan, Xiangfeng; Huang, Yu

2013-08-14

The phase formation sequence of silicides in two-dimensional (2-D) structures has been well-investigated due to their significance in microelectronics. Applying high-quality silicides as contacts in nanoscale silicon (Si) devices has caught considerable attention recently for their potential in improving and introducing new functions in nanodevices. However, nucleation and diffusion mechanisms are found to be very different in one-dimensional (1-D) nanostructures, and thus the phase manipulation of silicides is yet to be achieved there. In this work, we report kinetic phase modulations to selectively enhance or hinder the growth rates of targeted nickel (Ni) silicides in a Si nanowire (NW) and demonstrate that Ni31Si12, δ-Ni2Si, θ-Ni2Si, NiSi, and NiSi2 can emerge as the first contacting phase at the silicide/Si interface through these modulations. First, the growth rates of silicides are selectively tuned through template structure modifications. It is demonstrated that the growth rate of diffusion limited phases can be enhanced in a porous Si NW due to a short diffusion path, which suppresses the formation of interface limited NiSi2. In addition, we show that a confining thick shell can be applied around the Si NW to hinder the growth of the silicides with large volume expansion during silicidation, including Ni31Si12, δ-Ni2Si, and θ-Ni2Si. Second, a platinum (Pt) interlayer between the Ni source and the Si NW is shown to effectively suppress the formation of the phases with low Pt solubility, including the dominating NiSi2. Lastly, we show that with the combined applications of the above-mentioned approaches, the lowest resistive NiSi phase can form as the first phase in a solid NW with a Pt interlayer to suppress NiSi2 and a thick shell to hinder Ni31Si12, δ-Ni2Si, and θ-Ni2Si simultaneously. The resistivity and maximum current density of NiSi agree reasonably to reported values.

NUCLEAR FUEL MATERIAL

DOEpatents

Goeddel, W.V.

1962-06-26

An improved method is given for making the carbides of nuclear fuel material. The metal of the fuel material, which may be a fissile and/or fertile material, is transformed into a silicide, after which the silicide is comminuted to the desired particle size. This silicide is then carburized at an elevated temperature, either above or below the melting point of the silicide, to produce an intimate mixture of the carbide of the fuel material and the carbide of silicon. This mixture of the fuel material carbide and the silicon carbide is relatively stable in the presence of moisture and does not exhibit the highly reactive surface condition which is observed with fuel material carbides made by most other known methods. (AEC)

Si-Ge Nano-Structured with Tungsten Silicide Inclusions

NASA Technical Reports Server (NTRS)

Mackey, Jon; Sehirlioglu, Alp; Dynys, Fred

2014-01-01

Traditional silicon germanium high temperature thermoelectrics have potential for improvements in figure of merit via nano-structuring with a silicide phase. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples are prepared using powder metallurgy techniques; including mechanochemical alloying via ball milling and spark plasma sintering for densification. In addition to microstructural development, thermal stability of thermoelectric transport properties are reported, as well as couple and device level characterization.

Superconductivity of ternary silicide with the AlB(2)-type structure Sr(Ga(0.37),Si(0.63))(2).

PubMed

Imai, M; Abe, E; Ye, J; Nishida, K; Kimura, T; Honma, K; Abe, H; Kitazawa, H

2001-08-13

A ternary silicide Sr(Ga(0.37),Si(0.63))(2) was synthesized by a floating zone method. Electron diffraction and powder x-ray diffraction measurements indicate that the silicide has the AlB(2)-type structure with the lattice constants of a = 4.1427(6) A and c = 4.7998(9) A, where Si and Ga atoms are arranged in a chemically disordered honeycomb lattice and Sr atoms are inercalated between them. The silicide is isostructural with the high-temperature superconductor MgB(2) reported recently. Electrical resistivity and dc magnetization measurements revealed that it is a type-II superconductor with onset temperature of 3.5 K.

Fabrication of Ni-silicide/Si heterostructured nanowire arrays by glancing angle deposition and solid state reaction.

PubMed

Hsu, Hsun-Feng; Huang, Wan-Ru; Chen, Ting-Hsuan; Wu, Hwang-Yuan; Chen, Chun-An

2013-05-10

This work develops a method for growing Ni-silicide/Si heterostructured nanowire arrays by glancing angle Ni deposition and solid state reaction on ordered Si nanowire arrays. Samples of ordered Si nanowire arrays were fabricated by nanosphere lithography and metal-induced catalytic etching. Glancing angle Ni deposition deposited Ni only on the top of Si nanowires. When the annealing temperature was 500°C, a Ni3Si2 phase was formed at the apex of the nanowires. The phase of silicide at the Ni-silicide/Si interface depended on the diameter of the Si nanowires, such that epitaxial NiSi2 with a {111} facet was formed at the Ni-silicide/Si interface in Si nanowires with large diameter, and NiSi was formed in Si nanowires with small diameter. A mechanism that is based on flux divergence and a nucleation-limited reaction is proposed to explain this phenomenon of size-dependent phase formation.

Fabrication of Ni-silicide/Si heterostructured nanowire arrays by glancing angle deposition and solid state reaction

PubMed Central

2013-01-01

This work develops a method for growing Ni-silicide/Si heterostructured nanowire arrays by glancing angle Ni deposition and solid state reaction on ordered Si nanowire arrays. Samples of ordered Si nanowire arrays were fabricated by nanosphere lithography and metal-induced catalytic etching. Glancing angle Ni deposition deposited Ni only on the top of Si nanowires. When the annealing temperature was 500°C, a Ni3Si2 phase was formed at the apex of the nanowires. The phase of silicide at the Ni-silicide/Si interface depended on the diameter of the Si nanowires, such that epitaxial NiSi2 with a {111} facet was formed at the Ni-silicide/Si interface in Si nanowires with large diameter, and NiSi was formed in Si nanowires with small diameter. A mechanism that is based on flux divergence and a nucleation-limited reaction is proposed to explain this phenomenon of size-dependent phase formation. PMID:23663726

Methodology, Technical Approach and Measurement Techniques for Testing of TPM Thermal Protection Materials in IPM Plasmatrons

DTIC Science & Technology

2000-04-01

system, 8 - experiments on a study of boundary layer spectrum infrared window). before boiling of glass- silicide coating. This simple 3. SAMPLES AND...dependencies of surface temperature of tested materials and make conclusions concerned joint gllass- silicide coating and anode power of generator...obtained using test stagnation point configuration. glass- silicide coating vs anode power of HF-generator. Temperature peak at constant power

Metal silicide/poly-Si Schottky diodes for uncooled microbolometers

PubMed Central

2013-01-01

Nickel silicide Schottky diodes formed on polycrystalline Si 〈P〉 films are proposed as temperature sensors of monolithic uncooled microbolometer infrared focal plane arrays. The structure and composition of nickel silicide/polycrystalline silicon films synthesized in a low-temperature process are examined by means of transmission electron microscopy. The Ni silicide is identified as a multi-phase compound composed of 20% to 40% of Ni3Si, 30% to 60% of Ni2Si, and 10% to 30% of NiSi with probable minor content of NiSi2 at the silicide/poly-Si interface. Rectification ratios of the Schottky diodes vary from about 100 to about 20 for the temperature increasing from 22℃ to 70℃; they exceed 1,000 at 80 K. A barrier of around 0.95 eV is found to control the photovoltage spectra at room temperature. A set of barriers is observed in photo-electromotive force spectra at 80 K and attributed to the Ni silicide/poly-Si interface. Absolute values of temperature coefficients of voltage and current are found to vary from 0.3%℃ to 0.6%/℃ for forward bias and around 2.5%/℃ for reverse bias of the diodes. PMID:23594606

Nanopatterning of metal-coated silicon surfaces via ion beam irradiation: Real time x-ray studies reveal the effect of silicide bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

El-Atwani, Osman; Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907; Gonderman, Sean

We investigated the effect of silicide formation on ion-induced nanopatterning of silicon with various ultrathin metal coatings. Silicon substrates coated with 10 nm Ni, Fe, and Cu were irradiated with 200 eV argon ions at normal incidence. Real time grazing incidence small angle x-ray scattering (GISAXS) and x-ray fluorescence (XRF) were performed during the irradiation process and real time measurements revealed threshold conditions for nanopatterning of silicon at normal incidence irradiation. Three main stages of the nanopatterning process were identified. The real time GISAXS intensity of the correlated peaks in conjunction with XRF revealed that the nanostructures remain for amore » time period after the removal of the all the metal atoms from the sample depending on the binding energy of the metal silicides formed. Ex-situ XPS confirmed the removal of all metal impurities. In-situ XPS during the irradiation of Ni, Fe, and Cu coated silicon substrates at normal incidence demonstrated phase separation and the formation of different silicide phases that occur upon metal-silicon mixing. Silicide formation leads to nanostructure formation due the preferential erosion of the non-silicide regions and the weakening of the ion induced mass redistribution.« less

Development of Self-Healing Zirconium-Silicide Coatings for Improved Performance Zirconium-Alloy Fuel Cladding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sridharan, Kumar; Mariani, Robert; Bai, Xianming

Zirconium-alloy fuel claddings have been used successfully in Light Water Reactors (LWR) for over four decades. However, under high temperature accident conditions, zirconium-alloys fuel claddings exhibit profuse exothermic oxidation accompanied by release of hydrogen gas due to the reaction with water/steam. Additionally, the ZrO 2 layer can undergo monoclinic to tetragonal to cubic phase transformations at high temperatures which can induce stresses and cracking. These events were unfortunately borne out in the Fukushima-Daiichi accident in in Japan in 2011. In reaction to such accident, protective oxidation-resistant coatings for zirconium-alloy fuel claddings has been extensively investigated to enhance safety margins inmore » accidents as well as fuel performance under normal operation conditions. Such surface modification could also beneficially affect fuel rod heat transfer characteristics. Zirconium-silicide, a candidate coating material, is particularly attractive because zirconium-silicide coating is expected to bond strongly to zirconium-alloy substrate. Intermetallic compound phases of zirconium-silicide have high melting points and oxidation of zirconium silicide produces highly corrosion resistant glassy zircon (ZrSiO 4) and silica (SiO 2) which possessing self-healing qualities. Given the long-term goal of developing such coatings for use with nuclear reactor fuel cladding, this work describes results of oxidation and corrosion behavior of bulk zirconium-silicide and fabrication of zirconium-silicide coatings on zirconium-alloy test flats, tube configurations, and SiC test flats. In addition, boiling heat transfer of these modified surfaces (including ZrSi 2 coating) during clad quenching experiments is discussed in detail.« less

Oxygen chemisorption and oxide formation on Ni silicide surfaces at room temperature

NASA Astrophysics Data System (ADS)

Valeri, S.; Del Pennino, U.; Lomellini, P.; Sassaroli, P.

1984-10-01

Auger spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) have been used in a comparative study of the room temperature oxidation of Ni silicides of increasing silicon content, from Ni3Si to NiSi2. The results were compared with those for the oxidation of pure Si and Ni. All suicide surfaces in the exposure range between 0.2 and 104 L follow two-step oxidation kinetics: the first step is characterized by an oxygen uptake rate higher than in the second one. Attention was focused on the oxygen induced modifications of metal and silicon AES and XPS spectra in silicides, which are indicative of changes in the local electronic structure and in the chemical bonding. In general oxygen bonds with silicon leaving the metal unaffected; however, at high exposures, characteristic feature of the Ni-oxygen bonds appear in the Ni(MVV) Auger line of the Ni-rich silicides. The presence of Ni atoms enhances considerably the Si oxidation process in silicides with respect to pure Si, in terms both of a higher Si oxidation state and a higher oxygen uptake; this enhancement is stronger in Ni-rich silicides than in Si-rich silicides. The oxygen induced contributions in the Si(LVV) Auger line show structures at 76 and 83 eV, and those in the Si 2p photoemission spectra show binding energy shifts between -1 and -3.8 eV; we conclude that the oxidation products are mainly silicon suboxides, like Si2O3 and SiO; only on Ni3 Si at 104 L, a significant contribution of SiO2 was found. The Ni catalytic effect on Si oxidation has been discussed in terms of the suicide heat of formation, of the breaking of the silicon sp3 configuration in silicides and of the metal atom dissociative effect on the O2 molecule.

Passivated niobium cavities

DOEpatents

Myneni, Ganapati Rao [Yorktown, VA; Hjorvarsson, Bjorgvin [Lagga Arby, SE; Ciovati, Gianluigi [Newport News, VA

2006-12-19

A niobium cavity exhibiting high quality factors at high gradients is provided by treating a niobium cavity through a process comprising: 1) removing surface oxides by plasma etching or a similar process; 2) removing hydrogen or other gases absorbed in the bulk niobium by high temperature treatment of the cavity under ultra high vacuum to achieve hydrogen outgassing; and 3) assuring the long term chemical stability of the niobium cavity by applying a passivating layer of a superconducting material having a superconducting transition temperature higher than niobium thereby reducing losses from electron (cooper pair) scattering in the near surface region of the interior of the niobium cavity. According to a preferred embodiment, the passivating layer comprises niobium nitride (NbN) applied by reactive sputtering.

Solidification Based Grain Refinement in Steels

DTIC Science & Technology

2010-07-20

methods which worked in the SVSU foundry. However, additions of NbO powder, FeTi, misch metal , and rare earth silicide were successful. Misch metal ...and rare earth silicide additions at the ladle are the most promising from an industrial stand point. The project group has begun preparing for the... metal and rare earth silicide additions have also reduced grain size and improved hardness. Instructions: You may use this MS Word file to submit the

Self-organized patterns along sidewalls of iron silicide nanowires on Si(110) and their origin

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, Debolina; Mahato, J. C.; Bisi, Bhaskar

Iron silicide (cubic FeSi{sub 2}) nanowires have been grown on Si(110) by reactive deposition epitaxy and investigated by scanning tunneling microscopy and scanning/transmission electron microscopy. On an otherwise uniform nanowire, a semi-periodic pattern along the edges of FeSi{sub 2} nanowires has been discovered. The origin of such growth patterns has been traced to initial growth of silicide nanodots with a pyramidal Si base at the chevron-like atomic arrangement of a clean reconstructed Si(110) surface. The pyramidal base evolves into a comb-like structure along the edges of the nanowires. This causes the semi-periodic structure of the iron silicide nanowires along theirmore » edges.« less

Determination of niobium in the parts per million range in rocks

USGS Publications Warehouse

Grimaldi, F.S.

1960-01-01

A modified niobium thiocyanate spectrophotometric procedure relatively insensitive to titanium interference is presented. Elements such as tungsten, molybdenum, vanadium, and rhenium, which seriously interfere in the spectrophotometric determination of niobium, are separated by simple sodium hydroxide fusion and leach; iron and magnesium are used as carriers for the niobium. Tolerance limits are given for 28 elements in the spectrophotometric method. Specific application is made to the determination of niobium in the parts per million range in rocks. The granite G-1 contains 0.0022% niobium and the diabase W-1 0.00096% niobium.

Large grain cavities from pure niobium ingot

DOEpatents

Myneni, Ganapati Rao [Yorktown, VA; Kneisel, Peter [Williamsburg, VA; Cameiro, Tadeu [McMurray, PA

2012-03-06

Niobium cavities are fabricated by the drawing and ironing of as cast niobium ingot slices rather than from cold rolled niobium sheet. This method results in the production of niobium cavities having a minimum of grain boundaries at a significantly reduced cost as compared to the production of such structures from cold rolled sheet.

Controlled Formation of Radial Core-Shell Si/Metal Silicide Crystalline Heterostructures.

PubMed

Kosloff, Alon; Granot, Eran; Barkay, Zahava; Patolsky, Fernando

2018-01-10

The highly controlled formation of "radial" silicon/NiSi  core-shell nanowire heterostructures has been demonstrated for the first time. Here, we investigated the "radial" diffusion of nickel atoms into crystalline nanoscale silicon pillar 11 cores, followed by nickel silicide phase formation and the creation of a well-defined shell structure. The described approach is based on a two-step thermal process, which involves metal diffusion at low temperatures in the range of 200-400 °C, followed by a thermal curing step at a higher temperature of 400 °C. In-depth crystallographic analysis was performed by nanosectioning the resulting silicide-shelled silicon nanopillar heterostructures, giving us the ability to study in detail the newly formed silicide shells. Remarkably, it was observed that the resulting silicide shell thickness has a self-limiting behavior, and can be tightly controlled by the modulation of the initial diffusion-step temperature. In addition, electrical measurements of the core-shell structures revealed that the resulting shells can serve as an embedded conductive layer in future optoelectronic applications. This research provides a broad insight into the Ni silicide "radial" diffusion process at the nanoscale regime, and offers a simple approach to form thickness-controlled metal silicide shells in the range of 5-100 nm around semiconductor nanowire core structures, regardless the diameter of the nanowire cores. These high quality Si/NiSi core-shell nanowire structures will be applied in the near future as building blocks for the creation of utrathin highly conductive optically transparent top electrodes, over vertical nanopillars-based solar cell devices, which may subsequently lead to significant performance improvements of these devices in terms of charge collection and reduced recombination.

Impurity effects in transition metal silicides

NASA Technical Reports Server (NTRS)

Lien, C.-D.; Nicolet, M.-A.

1984-01-01

Impurities can affect the properties of silicides directly by virtue of their presence. Impurities can also influence the processes by which silicides are formed. The effect of impurities on the reaction of transition metal films with a silicon substrate induced by thermal annealing are well documented. The interpretation of these results is discussed. It is shown that impurity redistribution is a major factor in determining how significant the effect of an impurity is. Redistribution observed for dopant impurities is also discussed.

METHOD FOR COATING GRAPHITE WITH NIOBIUM CARBIDE

DOEpatents

Kane, J.S.; Carpenter, J.H.; Krikorian, O.H.

1962-01-16

A method is given for coating graphite with a hard, tenacious layer of niobium carbide up to 30 mils or more thick. The method makes use of the discovery that niobium metal, if degassed and heated rapidly below the carburization temperature in contact with graphite, spreads, wets, and penetrates the graphite without carburization. The method includes the obvious steps of physically contacting niobium powders or other physical forms of niobium with graphite, degassing the assembly below the niobium melting point, e.g., 1400 deg C, heating to about 2200 to 2400 deg C within about 15 minutes while outgassing at a high volume throughput, and thereafter carburizing the niobium. (AEC)

Effects of niobium additions on the structure, depth, and austenite grain size of the case of carburized 0.07% C steels

NASA Astrophysics Data System (ADS)

Islam, M. A.; Bepari, M. M. A.

1996-10-01

Carbon (0.07%) steel samples containing about 0.04% Nb singly and in combination with nitrogen were carburized in a natural Titas gas atmosphere at a temperature of 1223 K (950 °C) and a pressure of about 0.10 MPa for 1/2 to 4 h, followed by slow cooling in the furnace. Their microstructures were studied by optical microscopy. The austenite grain size of the case and the case depths were determined on baseline samples of low-carbon steels and also on niobium and (Nb + N) microalloyed steel samples. It was found that, when compared to the baseline steel, niobium alone or in combination with nitrogen decreased the thickness of cementite network near the surface of the carburized case of the steels. However, niobium in combination with nitrogen was more effective than niobium in reducing the thickness of cementite network. Niobium with or without nitrogen inhibited the formation of Widmanstätten cementite plates at grain boundaries and within the grains near the surface in the hypereutectoid zone of the case. It was also revealed that, when compared to the baseline steel, niobium decreased the case depth of the carburized steels, but that niobium with nitrogen is more effective than niobium alone in reducing the case depth. Niobium as niobium carbide (NbC) and niobium in the presence of nitrogen as niobium carbonitride, [Nb(C,N)] particles refined the austenite grain size of the carburized case, but Nb(C,N) was more effective than NbC in inhibiting austenite grain growth.

Transmission electron microscopy characterization of the erbium silicide formation process using a Pt/Er stack on a silicon-on-insulator substrate.

PubMed

Łaszcz, A; Katcki, J; Ratajczak, J; Tang, Xiaohui; Dubois, E

2006-10-01

Very thin erbium silicide layers have been used as source and drain contacts to n-type Si in low Schottky barrier MOSFETs on silicon-on-insulator substrates. Erbium silicide is formed by a solid-state reaction between the metal and silicon during annealing. The influence of annealing temperature (450 degrees C, 525 degrees C and 600 degrees C) on the formation of an erbium silicide layer in the Pt/Er/Si/SiO(2)/Si structure was analysed by means of cross-sectional transmission electron microscopy. The Si grains/interlayer formed at the interface and the presence of Si grains within the Er-related layer constitute proof that Si reacts with Er in the presence of a Pt top layer in the temperature range 450-600 degrees C. The process of silicide formation in the Pt/Er/Si structure differs from that in the Er/Si structure. At 600 degrees C, the Pt top layer vanishes and a (Pt-Er)Si(x) system is formed.

METHOD OF PRODUCING NIOBIUM METAL

DOEpatents

Wilhelm, H.A.; Stevens, E.R.

1960-05-24

A process is given for preparing ductile niobium metal by the reduction of niobium pentoxide with carbon. The invention resides in the addition, to the reaction mass, of from 0.05 to 0.4 atom of titanium (in the form of metallic titanium, titanium carbide, and/or titanium oxide) per one mole of niobium pentoxide. The mixture is heated under subatmospheric pressure to above 1300 deg C but below the melting point of niobium, and the carbon- and oxygen-free niobium sponge obtained is cooled under reduced pressure.

Probing Transition-Metal Silicides as PGM-Free Catalysts for Hydrogen Oxidation and Evolution in Acidic Medium

PubMed Central

Mittermeier, Thomas; Madkikar, Pankaj; Wang, Xiaodong; Gasteiger, Hubert A.; Piana, Michele

2017-01-01

In this experimental study, we investigate various transition-metal silicides as platinum-group-metal-(PGM)-free electrocatalysts for the hydrogen oxidation reaction (HOR), and for the hydrogen evolution reaction (HER) in acidic environment for the first time. Using cyclic voltammetry in 0.1 M HClO4, we first demonstrate that the tested materials exhibit sufficient stability against dissolution in the relevant potential window. Further, we determine the HOR and HER activities for Mo, W, Ta, Ni and Mo-Ni silicides in rotating disk electrode experiments. In conclusion, for the HOR only Ni2Si shows limited activity, and the HER activity of the investigated silicides is considerably lower compared to other PGM-free HER catalysts reported in the literature. PMID:28773022

Phase transformations in ion-irradiated silicides

NASA Technical Reports Server (NTRS)

Hewett, C. A.; Lau, S. S.; Suni, I.; Hung, L. S.

1985-01-01

The present investigation has three objectives. The first is concerned with the phase transformation of CoSi2 under ion implantation and the subsequent crystallization characteristics during annealing, taking into account epitaxial and nonepitaxial recrystallization behavior. The second objective is related to a study of the general trend of implantation-induced damage and crystallization behavior for a number of commonly used silicides. The last objective involves a comparison of the recrystallization behavior of cosputtered refractory silicides with that of the ion-implanted silicides. It was found that epitaxial regrowth of ion-irradiated CoSi2 occurred for samples with an epitaxial seed left at the Si/CoSi2 interface. A structural investigation of CoSi2 involving transmission electron microscopy (TEM) showed that after high-dose implantation CoSi2 is amorphous.

Method of surface preparation of niobium

DOEpatents

Srinivasan-Rao, Triveni; Schill, John F.

2003-01-01

The present invention is for a method of preparing a surface of niobium. The preparation method includes polishing, cleaning, baking and irradiating the niobium surface whereby the resulting niobium surface has a high quantum efficiency.

Determination of the Tribological Fundamentals of Solid Lubricated Ceramics. Volume 3. Appendices P through II

DTIC Science & Technology

1991-09-01

9H and tungsten silicides may also be present in the microstructure. The non-SiC eiemental concentrations for NC-203 would not be expected to exceed...lesser amounts of yttrium silicate and tungsten silicide . Trace amounts of a-Si 3N4 , silicon oxynitride, tungsten-iron- silicide , and yttrium silicon...SiC ESK On this sample, we detect Silicon, Carbon, and also Oxygen and Nitrogen, as well as Calcium and Sodium traces. After ionic etching up to about

Titanium disilicide formation by sputtering of titanium on heated silicon substrate

NASA Astrophysics Data System (ADS)

Tanielian, M.; Blackstone, S.

1984-09-01

We have sputter deposited titanium on bare silicon substrates at elevated temperatures. We find that at a substrate temperature of about 515 °C titanium silicide is formed due to the reaction of the titanium with the Si. The resistivity of the silicide is about 15 μΩ cm and it is not etchable in a selective titanium etch. This process can have applications in low-temperature, metal-oxide-semiconductor self-aligned silicide formation for very large scale integrated

Solidification Based Grain Refinement in Steels

DTIC Science & Technology

2011-09-27

project (Tasks 7-9). An industrial trial on an investment casting was done using rare earth silicide additions in a furnace prior to pouring (Task 7...an investment casting was done using rare earth silicide additions in a furnace prior to pounng (la.sk 7). Some of the test parts had a finer...poured at the end of a six casting batch. One test tree with no RE addition was poured. Before the second test tree was poured, sufficient RE silicide was

Surface morphology of molybdenum silicide films upon low-energy ion beam sputtering.

PubMed

Gago, R; Jaafar, M; Palomares, F J

2018-07-04

The surface morphology of molybdenum silicide (Mo x Si 1-x ) films has been studied after low-energy Ar + ion beam sputtering (IBS) to explore eventual pattern formation on compound targets and, simultaneously, gather information about the mechanisms behind silicide-assisted nanopatterning of silicon surfaces by IBS. For this purpose, Mo x Si 1-x films with compositions below, equal and above the MoSi 2 stoichiometry (x  =  0.33) have been produced by magnetron sputtering, as assessed by Rutherford backscattering spectrometry (RBS). The surface morphology of silicon and silicide films before and after IBS has been imaged by atomic force microscopy (AFM), comprising conditions where typical nanodot or ripple patterns emerge on the former. In the case of irradiated Mo x Si 1-x surfaces, AFM shows a marked surface smoothing at normal incidence with and without additional Mo incorporation (the former results in nanodot patterns on Si). The morphological analysis also provides no evidence of ion-induced phase separation in irradiated Mo x Si 1-x . Contrary to silicon, Mo x Si 1-x surfaces also do not display ripple formation for (impurity free) oblique irradiations, except at grazing incidence conditions where parallel ripples emerge in a more evident fashion than in the Si counterpart. By means of RBS, irradiated Mo x Si 1-x films with 1 keV Ar + at normal incidence have also been used to measure experimentally the (absolute) sputtering yield and rate of Si and Mo x Si 1-x materials. The analysis reveals that, under the present working conditions, the erosion rate of silicides is larger than for silicon, supporting simulations from the TRIDYN code. This finding questions the shielding effect from silicide regions as roughening mechanism in metal-assisted nanopatterning of silicon. On the contrary, the results highlight the relevance of in situ silicide formation. Ripple formation on Mo x Si 1-x under grazing incidence is also attributed to the dominance of sputtering effects under this geometry. In conclusion, our work provides some insights into the complex morphological evolution of compound surfaces and solid experimental evidences regarding the mechanisms behind silicide-assisted nanopatterning.

Silicide/Silicon Heterointerfaces, Reaction Kinetics and Ultra-short Channel Devices

NASA Astrophysics Data System (ADS)

Tang, Wei

Nickel silicide is one of the electrical contact materials widely used on very large scale integration (VLSI) of Si devices in microelectronic industry. This is because the silicide/silicon interface can be formed in a highly controlled manner to ensure reproducibility of optimal structural and electrical properties of the metal-Si contacts. These advantages can be inherited to Si nanowire (NW) field-effect transistors (FET) device. Due to the technological importance of nickel silicides, fundamental materials science of nickel silicides formation (Ni-Si reaction), especially in nanoscale, has raised wide interest and stimulate new insights and understandings. In this dissertation, in-situ transmission electron microscopy (TEM) in combination with FET device characterization will be demonstrated as useful tools in nano-device fabrication as well as in gaining insights into the process of nickel silicide formation. The shortest transistor channel length (17 nm) fabricated on a vapor-liquid-solid (VLS) grown silicon nanowire (NW) has been demonstrated by controlled reaction with Ni leads on an in-situ transmission electron microscope (TEM) heating stage at a moderate temperature of 400 ºC. NiSi2 is the leading phase, and the silicide-silicon interface is an atomically sharp type-A interface. At such channel lengths, high maximum on-currents of 890 (microA/microm) and a maximum transconductance of 430 (microS/microm) were obtained, which pushes forward the performance of bottom-up Si NW Schottky barrier field-effect transistors (SB-FETs). Through accurate control over the silicidation reaction, we provide a systematic study of channel length dependent carrier transport in a large number of SB-FETs with channel lengths in the range of (17 nm -- 3.6 microm). Our device results corroborate with our transport simulations and reveal a characteristic type of short channel effects in SB-FETs, both in on- and off-state, which is different from that in conventional MOSFETs, and that limits transport parameter extraction from SB-FETs using the conventional field-effect transconductance measurements. In addition to application of silicide in Si NW devices, the fundamental materials science of Ni-Si reaction is also of interest, and in-situ TEM has been shown to be a useful tool in obtaining dynamical phase transformation information and therefore providing insights into the new phase formation process. By using in-situ TEM techniques, a new gold catalyzed solid-liquid-solid (SLS) silicide phase growth mechanism in Si NWs is observed for the first time, which shows the liquid mediating growth can be also used in synthesis of metallic silicide nanowires. SLS is analogous to the VLS in both being liquid-mediated, but is fundamentally different in terms of nucleation and mass transport. In our SLS growth at 700 ºC, the Ni atoms are supplied from remote Ni particles by interstitial diffusion through Si NW into the pre-existing Au particle at the tip. Upon supersaturation of both Ni and Si in Au, octahedral shape of Ni disilicide phase nucleates in the middle of the Au liquid alloy, which thereafter sweeps through the Si NW and transform Si into NiSi2. Dissolution of Si by Au(Si,Ni) liquid mediating layer and growth of NiSi2 are shown to proceed in different manners. Using in-situ TEM technique, we also have the chance to present direct evidence that Si (111) twin boundaries and Si grain boundaries on Si NW surface can be efficient heterogeneous nucleation site for the silicide growth. By analyzing the nucleation site favorability, unlike other typical FCC materials like Cu or Si, we infer (111) twin defects in NiSi2 may have high interfacial energy. These results may provide valuable insights into the MOSFET source/drain (S/D) contact silicide formation process when defects are either unintentionally formed during the process or intentionally introduced to engineering the strain along the channel.

Fundamentals of Intrinsic Stress during Silicide Formation

NASA Astrophysics Data System (ADS)

Özçelik, A.; van Bockstael, C.; Detavernier, C.; Vanmeirhaeghe, R.

2007-04-01

Silicides are a very useful group of materials which can be used to make electrical contacts to circuits in electronic devices with an extremely high performance. The stress in thin films is an increasingly important technological issue from the standpoint of reliability and performance in IC processing. Manufacturers of micro electronic devices have to control the stress levels in the contact films to avoid device failures. Phase transitions such as silicidation or even a simple rearrangement of atoms like relaxation in the metal film cause a difference in the volume of the film from its starting value. This volume change produces stress inside the film. In this work we analyzed the stress evolution during the silicidation reaction of some metals such as W and Mo by using a home built in situ stress system at the University of Ghent.

Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Escobedo-Cousin, Enrique; Vassilevski, Konstantin; Hopf, Toby

Patterned few-layer graphene (FLG) films were obtained by local solid phase growth from nickel silicide supersaturated with carbon, following a fabrication scheme, which allows the formation of self-aligned ohmic contacts on FLG and is compatible with conventional SiC device processing methods. The process was realised by the deposition and patterning of thin Ni films on semi-insulating 6H-SiC wafers followed by annealing and the selective removal of the resulting nickel silicide by wet chemistry. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to confirm both the formation and subsequent removal of nickel silicide. The impact of process parameters such asmore » the thickness of the initial Ni layer, annealing temperature, and cooling rates on the FLG films was assessed by Raman spectroscopy, XPS, and atomic force microscopy. The thickness of the final FLG film estimated from the Raman spectra varied from 1 to 4 monolayers for initial Ni layers between 3 and 20 nm thick. Self-aligned contacts were formed on these patterned films by contact photolithography and wet etching of nickel silicide, which enabled the fabrication of test structures to measure the carrier concentration and mobility in the FLG films. A simple model of diffusion-driven solid phase chemical reaction was used to explain formation of the FLG film at the interface between nickel silicide and silicon carbide.« less

Study of Silicidation Process of Tungsten Catalyzer during Silicon Film Deposition in Catalytic Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Honda, Kazuhiro; Ohdaira, Keisuke; Matsumura, Hideki

2008-05-01

In catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD, source gases are decomposed by catalytic cracking reactions with heated catalyzing metal wires. In the case of silicon (Si) film deposition, such metal wires are often converted to silicide, which shortens the lifetime of catalyzing wires. As a catalyzer, tungsten (W) is widely used. Thus, the process of silicidation of a W catalyzer at temperatures over 1650 °C, which is the temperature used in Cat-CVD for Si film deposition, was studied extensively in various experiments. It is found that two phases of tungsten-silicide, WSi2 and W5Si3, are formed at this temperature, and that the radiation emissivity of WSi2 is 1.2 to 1.7 times higher than that of W5Si3 and pure W. The increase of surface emissivity due to the formation of WSi2 decreases the catalyzer surface temperature which induces further growth of the tungsten-silicide layer. It is also found that the suppression of WSi2 formation by elevating catalyzer temperatures over 1750 °C is a key to extending the lifetime of the W catalyzer in Cat-CVD.

Cobalt silicide nanocables grown on Co films: synthesis and physical properties.

PubMed

Hsin, Cheng-Lun; Yu, Shih-Ying; Wu, Wen-Wei

2010-12-03

Single-crystalline cobalt silicide/SiO(x) nanocables have been grown on Co thin films on an SiO(2) layer by a self-catalysis process via vapor-liquid-solid mechanism. The nanocables consist of a core of CoSi nanowires and a silicon oxide shell with a length of several tens of micrometers. In the confined space in the oxide shell, the CoSi phase is stable and free from agglomeration in samples annealed in air ambient at 900 °C for 1 h. The nanocable structure came to a clear conclusion that the thermal stability of the silicide nanowires can be resolved by the shell encapsulation. Cobalt silicide nanowires were obtained from the nanocable structure. The electrical properties of the CoSi nanowires have been found to be compatible with their thin film counterpart and a high maximum current density of the nanowires has been measured. One way to obtain silicate nanowires has been demonstrated. The silicate compound, which is composed of cobalt, silicon and oxygen, was achieved. The Co silicide/oxide nanocables are potentially useful as a key component of silicate nanowires, interconnects and magnetic units in nanoelectronics.

Two-dimensional self-organization of an ordered Au silicide nanowire network on a Si(110)-16 x 2 surface.

PubMed

Hong, Ie-Hong; Yen, Shang-Chieh; Lin, Fu-Shiang

2009-08-17

A well-ordered two-dimensional (2D) network consisting of two crossed Au silicide nanowire (NW) arrays is self-organized on a Si(110)-16 x 2 surface by the direct-current heating of approximately 1.5 monolayers of Au on the surface at 1100 K. Such a highly regular crossbar nanomesh exhibits both a perfect long-range spatial order and a high integration density over a mesoscopic area, and these two self-ordering crossed arrays of parallel-aligned NWs have distinctly different sizes and conductivities. NWs are fabricated with widths and pitches as small as approximately 2 and approximately 5 nm, respectively. The difference in the conductivities of two crossed-NW arrays opens up the possibility for their utilization in nanodevices of crossbar architecture. Scanning tunneling microscopy/spectroscopy studies show that the 2D self-organization of this perfect Au silicide nanomesh can be achieved through two different directional electromigrations of Au silicide NWs along different orientations of two nonorthogonal 16 x 2 domains, which are driven by the electrical field of direct-current heating. Prospects for this Au silicide nanomesh are also discussed.

Chromium silicide formation by ion mixing

NASA Technical Reports Server (NTRS)

Shreter, U.; So, F. C. T.; Nicolet, M.-A.

1984-01-01

The formation of CrSi2 by ion mixing was studied as a function of temperature, silicide thickness and irradiated interface. Samples were prepared by annealing evaporated couples of Cr on Si and Si on Cr at 450 C for short times to form Si/CrSi2/Cr sandwiches. Xenon beams with energies up to 300 keV and fluences up to 8 x 10 to the 15th per sq cm were used for mixing at temperatures between 20 and 300 C. Penetrating only the Cr/CrSi2 interface at temperatures above 150 C induces further growth of the silicide as a uniform stoichiometric layer. The growth rate does not depend on the thickness of the initially formed silicide at least up to a thickness of 150 nm. The amount of growth depends linearly on the density of energy deposited at the interface. The growth is temperature dependent with an apparent activation energy of 0.2 eV. Irradiating only through the Si/CrSi2 interface does not induce silicide growth. It is concluded that the formation of CrSi2 by ion beam mixing is an interface-limited process and that the limiting reaction occurs at the Cr/CrSi2 interface.

First-principles calculations of niobium hydride formation in superconducting radio-frequency cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ford, Denise C.; Cooley, Lance D.; Seidman, David N.

Niobium hydride is suspected to be a major contributor to degradation of the quality factor of niobium superconducting radio-frequency (SRF) cavities. In this study, we connect the fundamental properties of hydrogen in niobium to SRF cavity performance and processing. We modeled several of the niobium hydride phases relevant to SRF cavities and present their thermodynamic, electronic, and geometric properties determined from calculations based on density-functional theory. We find that the absorption of hydrogen from the gas phase into niobium is exothermic and hydrogen becomes somewhat anionic. The absorption of hydrogen by niobium lattice vacancies is strongly preferred over absorption intomore » interstitial sites. A single vacancy can accommodate six hydrogen atoms in the symmetrically equivalent lowest-energy sites and additional hydrogen in the nearby interstitial sites affected by the strain field: this indicates that a vacancy can serve as a nucleation center for hydride phase formation. Small hydride precipitates may then occur near lattice vacancies upon cooling. Vacancy clusters and extended defects should also be enriched in hydrogen, potentially resulting in extended hydride phase regions upon cooling. We also assess the phase changes in the niobium-hydrogen system based on charge transfer between niobium and hydrogen, the strain field associated with interstitial hydrogen, and the geometry of the hydride phases. The results of this study stress the importance of not only the hydrogen content in niobium, but also the recovery state of niobium for the performance of SRF cavities.« less

Method for etching thin films of niboium and niobium-containing compounds for preparing superconductive circuits

DOEpatents

Kampwirth, R.T.; Schuller, I.K.; Falco, C.M.

1979-11-23

An improved method of preparing thin film superconducting electrical circuits of niobium or niobium compounds is provided in which a thin film of the niobium or niobium compound is applied to a nonconductive substrate and covered with a layer of photosensitive material. The sensitive material is in turn covered with a circuit pattern exposed and developed to form a mask of the circuit in photoresistive material on the surface of the film. The unmasked excess niobium film is removed by contacting the substrate with an aqueous etching solution of nitric acid, sulfuric acid, and hydrogen fluoride, which will rapidly etch the niobium compound without undercutting the photoresist. A modification of the etching solution will permit thin films to be lifted from the substrate without further etching.

Process for the generation of .alpha., .beta.-unsaturated carboxylic acids and esters using niobium catalyst

DOEpatents

Gogate, Makarand Ratnakav; Spivey, James Jerome; Zoeller, Joseph Robert

1999-01-01

A process using a niobium catalyst includes the step of reacting an ester or carboxylic acid with oxygen and an alcohol in the presence a niobium catalyst to respectively produce an .alpha.,.beta.-unsaturated ester or carboxylic acid. Methanol may be used as the alcohol, and the ester or carboxylic acid may be passed over the niobium catalyst in a vapor stream containing oxygen and methanol. Alternatively, the process using a niobium catalyst may involve the step of reacting an ester and oxygen in the presence the niobium catalyst to produce an .alpha.,.beta.-unsaturated carboxylic acid. In this case the ester may be a methyl ester. In either case, niobium oxide may be used as the niobium catalyst with the niobium oxide being present on a support. The support may be an oxide selected from the group consisting of silicon oxide, aluminum oxide, titanium oxide and mixtures thereof. The catalyst may be formed by reacting niobium fluoride with the oxide serving as the support. The niobium catalyst may contain elemental niobium within the range of 1 wt % to 70 wt %, and more preferably within the range of 10 wt % to 30 wt %. The process may be operated at a temperature from 150 to 450.degree. C. and preferably from 250 to 350.degree. C. The process may be operated at a pressure from 0.1 to 15 atm. absolute and preferably from 0.5-5 atm. absolute. The flow rate of reactants may be from 10 to 10,000 L/kg.sub.(cat) /h, and preferably from 100 to 1,000 L/kg.sub.(cat) /h.

Insights to Superconducting Radio-Frequency Cavity Processing from First Principles Calculations and Spectroscopic Techniques

NASA Astrophysics Data System (ADS)

Ford, Denise Christine

Insights to the fundamental processes that occur during the manufacturing of niobium superconducting radio-frequency (SRF) cavities are provided via analyses of density functional theory calculations and Raman, infrared, and nuclear magnetic resonance (NMR) spectra. I show that during electropolishing fluorine is bound and released by the reaction of the acid components in the solution: HF + H2SO4 <-> HFSO3 + H2O. This result implies that new recipes can possibly be developed on the principle of controlled release of fluorine by a chemical reaction. I also show that NMR or Raman spectroscopy can be used to monitor the free fluorine when polishing with the standard electropolishing recipe. Density functional theory was applied to calculate the properties of common processing impurities---hydrogen, oxygen, nitrogen, and carbon---in the niobium. These impurities lower the superconducting transition temperature of niobium, and hydride precipitates are at best weakly superconducting. I modeled several of the niobium hydride phases relevant to SRF cavities, and explain the phase changes in the niobium hydrogen system based on the charge transfer between niobium and hydrogen and the strain field inside of the niobium. I also present evidence for a niobium lattice vacancy serving as a nucleation center for hydride phase formation. In considering the other chemical impurities in niobium, I show that the absorption of oxygen into a niobium lattice vacancy is preferred over the absorption of hydrogen, which indicates that oxygen can block these phase nucleation centers. I also show that dissolved oxygen atoms can trap dissolved hydrogen atoms to prevent niobium hydride phase formation. Nitrogen and carbon were studied in less depth, but behaved similarly to oxygen. Based on these results and a literature survey, I propose a mechanism for the success of the low-temperature anneal applied to niobium SRF cavities. Finally, I present the beginning of a model to describe magnetic impurities in niobium SRF cavities, which can cause a loss of local superconductivity. I calculated magnetic configurations of niobium hydrides and oxides, and show that stoichiometric hydride and oxide structures are nonmagnetic, but defective oxide structures retain local magnetic moments.

Insights to Superconducting Radio-Frequency Cavity Processing from First Principles Calculations and Spectroscopic Techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ford, Denise Christine

Insights to the fundamental processes that occur during the manufacturing of niobium superconducting radio-frequency (SRF) cavities are provided via analyses of density functional theory calculations and Raman, infrared, and nuclear magnetic resonance (NMR) spectra. I show that during electropolishing fluorine is bound and released by the reaction of the acid components in the solution: HF + H 2SO 4 <-> HFSO 3 + H 2O. This result implies that new recipes can possibly be developed on the principle of controlled release of fluorine by a chemical reaction. I also show that NMR or Raman spectroscopy can be used to monitormore » the free fluorine when polishing with the standard electropolishing recipe. Density functional theory was applied to calculate the properties of common processing impurities – hydrogen, oxygen, nitrogen, and carbon – in the niobium. These impurities lower the superconducting transition temperature of niobium, and hydride precipitates are at best weakly superconducting. I modeled several of the niobium hydride phases relevant to SRF cavities, and explain the phase changes in the niobium hydrogen system based on the charge transfer between niobium and hydrogen and the strain field inside of the niobium. I also present evidence for a niobium lattice vacancy serving as a nucleation center for hydride phase formation. In considering the other chemical impurities in niobium, I show that the absorption of oxygen into a niobium lattice vacancy is preferred over the absorption of hydrogen, which indicates that oxygen can block these phase nucleation centers. I also show that dissolved oxygen atoms can trap dissolved hydrogen atoms to prevent niobium hydride phase formation. Nitrogen and carbon were studied in less depth, but behaved similarly to oxygen. Based on these results and a literature survey, I propose a mechanism for the success of the low-temperature anneal applied to niobium SRF cavities. Finally, I present the beginning of a model to describe magnetic impurities in niobium SRF cavities, which can cause a loss of local superconductivity. I calculated magnetic configurations of niobium hydrides and oxides, and show that stoichiometric hydride and oxide structures are nonmagnetic, but defective oxide structures retain local magnetic moments.« less

Energetic Materials Laboratory

DTIC Science & Technology

2015-04-30

regolith simulants mixed with magnesium, supported by NASA. It has also been used for studies on combustion synthesis of magnesium silicide , a...ammonium dinitramide based monopropellant.  The laser flash apparatus has been used for thermal diffusivities measurements for magnesium silicide and

Ensuring the Consistency of Silicide Coatings

NASA Technical Reports Server (NTRS)

Ramani, V.; Lampson, F. K.

1982-01-01

Diagram specifies optimum fusing time for given thicknesses of refractory metal-silicide coatings on columbium C-103 substrates. Adherence to indicated fusion times ensures consistent coatings and avoids underdiffusion and overdiffusion. Accuracy of diagram has been confirmed by tests.

Room temperature ferromagnetic gadolinium silicide nanoparticles

DOEpatents

Hadimani, Magundappa Ravi L.; Gupta, Shalabh; Harstad, Shane; Pecharsky, Vitalij; Jiles, David C.

2018-03-06

A particle usable as T₁ and T₂ contrast agents is provided. The particle is a gadolinium silicide (Gd₅Si₄) particle that is ferromagnetic at temperatures up to 290 K and is less than 2 .mu.m in diameter. An MRI contrast agent that includes a plurality of gadolinium silicide (Gd.sub.5Si.sub.4) particles that are less than 1 .mu.m in diameter is also provided. A method for creating gadolinium silicide (Gd₅Si₄) particles is also provided. The method includes the steps of providing a Gd₅Si₄ bulk alloy; grinding the Gd₅Si₄ bulk alloy into a powder; and milling the Gd₅Si₄ bulk alloy powder for a time of approximately 20 minutes or less.

Silicide formation process of Er films with Ta and TaN capping layers.

PubMed

Choi, Juyun; Choi, Seongheum; Kim, Jungwoo; Na, Sekwon; Lee, Hoo-Jeong; Lee, Seok-Hee; Kim, Hyoungsub

2013-12-11

The phase development and defect formation during the silicidation reaction of sputter-deposited Er films on Si with ∼20-nm-thick Ta and TaN capping layers were examined. TaN capping effectively prevented the oxygen incorporation from the annealing atmosphere, which resulted in complete conversion to the ErSi2-x phase. However, significant oxygen penetration through the Ta capping layer inhibited the ErSi2-x formation, and incurred the growth of several Er-Si-O phases, even consuming the ErSi2-x layer formed earlier. Both samples produced a number of small recessed defects at an early silicidation stage. However, large rectangular or square-shaped surface defects, which were either pitlike or pyramidal depending on the capping layer identity, were developed as the annealing temperature increased. The origin of different defect generation mechanisms was suggested based on the capping layer-dependent silicidation kinetics.

DEVELOPMENT OF NIOBIUM-BASE ALLOYS. Period covered January 1, 1956 to March 1, 1957

DOE Office of Scientific and Technical Information (OSTI.GOV)

Begley, R.T. ed.

1957-11-01

The flow and fracture characteristics of commercial purity powder metallurgy niobium were investigated in the range 250 to --196 deg C. Niobium was found to undergo a ductile-brittle transition in the range --125 to --196 deg C, and the transition temperature range of niobium was found to be less affected by the presence of interstitial impurities than many other body-centered cubic metals. The creeprupture properties of powder metallurgy niobium were investigated at 982 and 1O93 deg C (1800 and 2OOO deg F), and the 100-hour rupture strength of commercial niobium in vacuum was determined to be sigdicantiy greater than unalloyedmore » molybdenum. The creep-rupture results suggest that small quantities of gaseous contaminants may be responslble for the high strength of commercial niobium at elevated temperatures. The oxidation behavior of nioblum was investigated in the temperature range 350 to 7OO C. At the higher temperatures, oxidation followed a linear rate law. Between 500 and 625 deg C, the rate of oxidation was found to be nearly independent of temperature. Oxygen and nitrogen contamination of welding atmospheres was studied to determine its effect on the weld properties of niobium. Nitrogen was establlshed to be very detrimental to the mechanical properties of niobium welds. High-purity niobium, having a hardness of less than 60 VPN, was produced by cage-zone refinieg techniques. (auth)« less

Surface morphology of molybdenum silicide films upon low-energy ion beam sputtering

NASA Astrophysics Data System (ADS)

Gago, R.; Jaafar, M.; Palomares, F. J.

2018-07-01

The surface morphology of molybdenum silicide (Mo x Si1‑x ) films has been studied after low-energy Ar+ ion beam sputtering (IBS) to explore eventual pattern formation on compound targets and, simultaneously, gather information about the mechanisms behind silicide-assisted nanopatterning of silicon surfaces by IBS. For this purpose, Mo x Si1‑x films with compositions below, equal and above the MoSi2 stoichiometry (x  =  0.33) have been produced by magnetron sputtering, as assessed by Rutherford backscattering spectrometry (RBS). The surface morphology of silicon and silicide films before and after IBS has been imaged by atomic force microscopy (AFM), comprising conditions where typical nanodot or ripple patterns emerge on the former. In the case of irradiated Mo x Si1‑x surfaces, AFM shows a marked surface smoothing at normal incidence with and without additional Mo incorporation (the former results in nanodot patterns on Si). The morphological analysis also provides no evidence of ion-induced phase separation in irradiated Mo x Si1‑x . Contrary to silicon, Mo x Si1‑x surfaces also do not display ripple formation for (impurity free) oblique irradiations, except at grazing incidence conditions where parallel ripples emerge in a more evident fashion than in the Si counterpart. By means of RBS, irradiated Mo x Si1‑x films with 1 keV Ar+ at normal incidence have also been used to measure experimentally the (absolute) sputtering yield and rate of Si and Mo x Si1‑x materials. The analysis reveals that, under the present working conditions, the erosion rate of silicides is larger than for silicon, supporting simulations from the TRIDYN code. This finding questions the shielding effect from silicide regions as roughening mechanism in metal-assisted nanopatterning of silicon. On the contrary, the results highlight the relevance of in situ silicide formation. Ripple formation on Mo x Si1‑x under grazing incidence is also attributed to the dominance of sputtering effects under this geometry. In conclusion, our work provides some insights into the complex morphological evolution of compound surfaces and solid experimental evidences regarding the mechanisms behind silicide-assisted nanopatterning.

PROCESS OF COATING GRAPHITE WITH NIOBIUM-TITANIUM CARBIDE

DOEpatents

Halden, F.A.; Smiley, W.D.; Hruz, F.M.

1961-07-01

A process of coating graphite with niobium - titanium carbide is described. It is found that the addition of more than ten percent by weight of titanium to niobium results in much greater wetting of the graphite by the niobium and a much more adherent coating. The preferred embodiment comprises contacting the graphite with a powdered alloy or mixture, degassing simultaneously the powder and the graphite, and then heating them to a high temperature to cause melting, wetting, spreading, and carburization of the niobium-titanium powder.

Niobium-bearing arsenides and germanides from elemental mixtures not involving niobium: a new twist to an old problem in solid-state synthesis.

PubMed

Baranets, Sviatoslav; He, Hua; Bobev, Svilen

2018-05-01

Three isostructural transition-metal arsenides and germanides, namely niobium nickel arsenide, Nb 0.92(1) NiAs, niobium cobalt arsenide, NbCoAs, and niobium nickel germanide, NbNiGe, were obtained as inadvertent side products of high-temperature reactions in sealed niobium containers. In addition to reporting for the very first time the structures of the title compounds, refined from single-crystal X-ray diffraction data, this article also serves as a reminder that niobium containers may not be suitable for the synthesis of ternary arsenides and germanides by traditional high-temperature reactions. Synthetic work involving alkali or alkaline-earth metals, transition or early post-transition metals, and elements from groups 14 or 15 under such conditions may yield Nb-containing products, which at times could be the major products of such reactions.

High intensity discharge device containing oxytrihalides

DOEpatents

Lapatovich, Walter P.; Keeffe, William M.; Liebermann, Richard W.; Maya, Jakob

1987-01-01

A fill composition for a high intensity discharge device including mercury, niobium oxytrihalide, and a molecular stabilization agent is provided. The molar ratio of niobium oxytrihalide to the molecular stabilization agent in the fill is in the range of from about 5:1 to about 7.5:1. Niobium oxytrihalide is present in the fill in sufficient amount to produce, by dissociation in the discharge, atomic niobium, niobium oxide, NbO, and niobium dioxide, NbO.sub.2, with the molar ratio of niobium-containing vapor species to mercury in the fill being in the range of from about 0.01:1 to about 0.50:1; and mercury pressure of about 1 to about 50 atmospheres at lamp operating temperature. There is also provided a high intensity discharge device comprising a sealed light-transmissive arc tube; the arc tube including the above-described fill; and an energizing means for producing an electric discharge within the arc tube.

High intensity discharge device containing oxytrihalides

DOEpatents

Lapatovich, W.P.; Keeffe, W.M.; Liebermann, R.W.; Maya, J.

1987-06-09

A fill composition for a high intensity discharge device including mercury, niobium oxytrihalide, and a molecular stabilization agent is provided. The molar ratio of niobium oxytrihalide to the molecular stabilization agent in the fill is in the range of from about 5:1 to about 7.5:1. Niobium oxytrihalide is present in the fill in sufficient amount to produce, by dissociation in the discharge, atomic niobium, niobium oxide, NbO, and niobium dioxide, NbO[sub 2], with the molar ratio of niobium-containing vapor species to mercury in the fill being in the range of from about 0.01:1 to about 0.50:1; and mercury pressure of about 1 to about 50 atmospheres at lamp operating temperature. There is also provided a high intensity discharge device comprising a sealed light-transmissive arc tube; the arc tube including the above-described fill; and an energizing means for producing an electric discharge within the arc tube. 7 figs.

10 CFR Appendix L to Part 110 - Illustrative List of Byproduct Materials Under NRC Export/Import Licensing Authority a

Code of Federal Regulations, 2010 CFR

2010-01-01

... 149 (Nd 149) Neptunium 235 (Np 235) Neptunium 237 (Np 237) Nickel 59 (Ni 59) Nickel 63 (Ni 63) Nickel 65 (Ni 65) Niobium 93m (Nb 93m) Niobium 94 (Nb 94) Niobium 95 (Nb 95) Niobium 97 (Nb 97) Osmium 185...

10 CFR Appendix L to Part 110 - Illustrative List of Byproduct Materials Under NRC Export/Import Licensing Authority a

Code of Federal Regulations, 2011 CFR

2011-01-01

...) Neodymium 147 (Nd 147) Neodymium 149 (Nd 149) Neptunium 235 (Np 235) Neptunium 237 (Np 237) Nickel 59 (Ni 59) Nickel 63 (Ni 63) Nickel 65 (Ni 65) Niobium 93m (Nb 93m) Niobium 94 (Nb 94) Niobium 95 (Nb 95) Niobium 97...

Stacked silicide/silicon mid- to long-wavelength infrared detector

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

Stacked silicide/silicon mid- to long-wavelength infrared detector

DOEpatents

Maserjian, Joseph

1990-03-13

The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

An inert marker study for palladium silicide formation - Si moves in polycrystalline Pd2Si

NASA Technical Reports Server (NTRS)

Ho, K. T.; Lien, C.-D.; Shreter, U.; Nicolet, M.-A.

1985-01-01

A novel use of Ti marker is introduced to investigate the moving species during Pd2Si formation on 111 and 100 line-type Si substrates. Silicide formed from amorphous Si is also studied using a W marker. Although these markers are observed to alter the silicide formation in the initial stage, the moving species can be identified once a normal growth rate is resumed. It is found that Si is the dominant moving species for all three types of Si crystallinity. However, Pd will participate in mass transport when Si motion becomes obstructed.

Method for forming metallic silicide films on silicon substrates by ion beam deposition

DOEpatents

Zuhr, Raymond A.; Holland, Orin W.

1990-01-01

Metallic silicide films are formed on silicon substrates by contacting the substrates with a low-energy ion beam of metal ions while moderately heating the substrate. The heating of the substrate provides for the diffusion of silicon atoms through the film as it is being formed to the surface of the film for interaction with the metal ions as they contact the diffused silicon. The metallic silicide films provided by the present invention are contaminant free, of uniform stoichiometry, large grain size, and exhibit low resistivity values which are of particular usefulness for integrated circuit production.

Organometallic Routes into the Nanorealms of Binary Fe-Si Phases

PubMed Central

Kolel-Veetil, Manoj K.; Keller, Teddy M.

2010-01-01

The Fe-Si binary system provides several iron silicides that have varied and exceptional material properties with applications in the electronic industry. The well known Fe-Si binary silicides are Fe3Si, Fe5Si3, FeSi, α-FeSi2 and β-FeSi2. While the iron-rich silicides Fe3Si and Fe5Si3 are known to be room temperature ferromagnets, the stoichiometric FeSi is the only known transition metal Kondo insulator. Furthermore, Fe5Si3 has also been demonstrated to exhibit giant magnetoresistance (GMR). The silicon-rich β-FeSi2 is a direct band gap material usable in light emitting diode (LED) applications. Typically, these silicides are synthesized by traditional solid-state reactions or by ion beam-induced mixing (IBM) of alternating metal and silicon layers. Alternatively, the utilization of organometallic compounds with reactive transition metal (Fe)-carbon bonds has opened various routes for the preparation of these silicides and the silicon-stabilized bcc- and fcc-Fe phases contained in the Fe-Si binary phase diagram. The unique interfacial interactions of carbon with the Fe and Si components have resulted in the preferential formation of nanoscale versions of these materials. This review will discuss such reactions.

Impact of laser anneal on NiPt silicide texture and chemical composition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feautrier, C.; Ozcan, A. S.; Lavoie, C.

We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. Themore » laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Here, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.« less

In situ micro-Raman analysis and X-ray diffraction of nickel silicide thin films on silicon.

PubMed

Bhaskaran, M; Sriram, S; Perova, T S; Ermakov, V; Thorogood, G J; Short, K T; Holland, A S

2009-01-01

This article reports on the in situ analysis of nickel silicide (NiSi) thin films formed by thermal processing of nickel thin films deposited on silicon substrates. The in situ techniques employed for this study include micro-Raman spectroscopy (microRS) and X-ray diffraction (XRD); in both cases the variations for temperatures up to 350 degrees C has been studied. Nickel silicide thin films formed by vacuum annealing of nickel on silicon were used as a reference for these measurements. In situ analysis was carried out on nickel thin films on silicon, while the samples were heated from room temperature to 350 degrees C. Data was gathered at regular temperature intervals and other specific points of interest (such as 250 degrees C, where the reaction between nickel and silicon to form Ni(2)Si is expected). The transformations from the metallic state, through the intermediate reaction states, until the desired metal-silicon reaction product is attained, are discussed. The evolution of nickel silicide from the nickel film can be observed from both the microRS and XRD in situ studies. Variations in the evolution of silicide from metal for different silicon substrates are discussed, and these include (100) n-type, (100) p-type, and (110) p-type silicon substrates.

Synthesis and design of silicide intermetallic materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petrovic, J.J.; Castro, R.G.; Butt, D.P.

1997-04-01

The overall objective of this program is to develop structural silicide-based materials with optimum combinations of elevated temperature strength/creep resistance, low temperature fracture toughness, and high temperature oxidation and corrosion resistance for applications of importance to the U.S. processing industry. A further objective is to develop silicide-based prototype industrial components. The ultimate aim of the program is to work with industry to transfer the structural silicide materials technology to the private sector in order to promote international competitiveness in the area of advanced high temperature materials and important applications in major energy-intensive U.S. processing industries. The program presently has amore » number of developing industrial connections, including a CRADA with Schuller International Inc. targeted at the area of MoSi{sub 2}-based high temperature materials and components for fiberglass melting and processing applications. The authors are also developing an interaction with the Institute of Gas Technology (IGT) to develop silicides for high temperature radiant gas burner applications, for the glass and other industries. Current experimental emphasis is on the development and characterization of MoSi{sub 2}-Si{sub 3}N{sub 4} and MoSi{sub 2}-SiC composites, the plasma spraying of MoSi{sub 2}-based materials, and the joining of MoSi{sub 2} materials to metals.« less

Impact of laser anneal on NiPt silicide texture and chemical composition

NASA Astrophysics Data System (ADS)

Feautrier, C.; Ozcan, A. S.; Lavoie, C.; Valery, A.; Beneyton, R.; Borowiak, C.; Clément, L.; Pofelski, A.; Salem, B.

2017-06-01

We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. The laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Here, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.

Additive manufacturing method for SRF components of various geometries

DOEpatents

Rimmer, Robert; Frigola, Pedro E; Murokh, Alex Y

2015-05-05

An additive manufacturing method for forming nearly monolithic SRF niobium cavities and end group components of arbitrary shape with features such as optimized wall thickness and integral stiffeners, greatly reducing the cost and technical variability of conventional cavity construction. The additive manufacturing method for forming an SRF cavity, includes atomizing niobium to form a niobium powder, feeding the niobium powder into an electron beam melter under a vacuum, melting the niobium powder under a vacuum in the electron beam melter to form an SRF cavity; and polishing the inside surface of the SRF cavity.

Process for alloying uranium and niobium

DOEpatents

Holcombe, Cressie E.; Northcutt, Jr., Walter G.; Masters, David R.; Chapman, Lloyd R.

1991-01-01

Alloys such as U-6Nb are prepared by forming a stacked sandwich array of uraniun sheets and niobium powder disposed in layers between the sheets, heating the array in a vacuum induction melting furnace to a temperature such as to melt the uranium, holding the resulting mixture at a temperature above the melting point of uranium until the niobium dissolves in the uranium, and casting the uranium-niobium solution. Compositional uniformity in the alloy product is enabled by use of the sandwich structure of uranium sheets and niobium powder.

Texture in thin film silicides and germanides: A review

DOE Office of Scientific and Technical Information (OSTI.GOV)

De Schutter, B., E-mail: bob.deschutter@ugent.be; De Keyser, K.; Detavernier, C.

Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi{sub 2}, C54-TiSi{sub 2}, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si{sub 1−x}Ge{sub x} in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is ofmore » utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.« less

Near surface silicide formation after off-normal Fe-implantation of Si(001) surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khanbabaee, B., E-mail: khanbabaee@physik.uni-siegen.de; Pietsch, U.; Lützenkirchen-Hecht, D.

We report on formation of non-crystalline Fe-silicides of various stoichiometries below the amorphized surface of crystalline Si(001) after irradiation with 5 keV Fe{sup +} ions under off-normal incidence. We examined samples prepared with ion fluences of 0.1 × 10{sup 17} and 5 × 10{sup 17} ions cm{sup −2} exhibiting a flat and patterned surface morphology, respectively. Whereas the iron silicides are found across the whole surface of the flat sample, they are concentrated at the top of ridges at the rippled surface. A depth resolved analysis of the chemical states of Si and Fe atoms in the near surface region was performed by combining X-raymore » photoelectron spectroscopy and X-ray absorption spectroscopy (XAS) using synchrotron radiation. The chemical shift and the line shape of the Si 2p core levels and valence bands were measured and associated with the formation of silicide bonds of different stoichiometric composition changing from an Fe-rich silicides (Fe{sub 3}Si) close to the surface into a Si-rich silicide (FeSi{sub 2}) towards the inner interface to the Si(001) substrate. This finding is supported by XAS analysis at the Fe K-edge which shows changes of the chemical environment and the near order atomic coordination of the Fe atoms in the region close to surface. Because a similar Fe depth profile has been found for samples co-sputtered with Fe during Kr{sup +} ion irradiation, our results suggest the importance of chemically bonded Fe in the surface region for the process of ripple formation.« less

Texture in thin film silicides and germanides: A review

NASA Astrophysics Data System (ADS)

De Schutter, B.; De Keyser, K.; Lavoie, C.; Detavernier, C.

2016-09-01

Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi2, C54-TiSi2, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si1-xGex in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yuryev, V. A., E-mail: vyuryev@kapella.gpi.ru; Chizh, K. V.; Chapnin, V. A.

Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si{sub 3}N{sub 4}/SiO{sub 2}/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy.more » Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about −2%/ °C in the temperature interval from 25 to 50 °C.« less

Surface-interface exploration of Mg deposited on Si(100) and oxidation effect on interfacial layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarpi, B.; Daineche, R.; Girardeaux, C.

Using scanning tunneling microscopy and spectroscopy, Auger electron spectroscopy, and low energy electron diffraction, we have studied the growth of Mg deposited on Si(100)-(2 × 1). Coverage from 0.05 monolayer (ML) to 3 ML was investigated at room temperature. The growth mode of the magnesium is a two steps process. At very low coverage, there is formation of an amorphous ultrathin silicide layer with a band gap of 0.74 eV, followed by a layer-by-layer growth of Mg on top of this silicide layer. Topographic images reveal that each metallic Mg layer is formed by 2D islands coalescence process on top of the silicidemore » interfacial layer. During oxidation of the Mg monolayer, the interfacial silicide layer acts as diffusion barrier for the oxygen atoms with a decomposition of the silicide film to a magnesium oxide as function of O{sub 2} exposure.« less

Palladium silicide formation under the influence of nitrogen and oxygen impurities

NASA Technical Reports Server (NTRS)

Ho, K. T.; Lien, C.-D.; Nicolet, M.-A.

1985-01-01

The effect of impurities on the growth of the Pd2Si layer upon thermal annealing of a Pd film on 100 line-type and amorphous Si substrates is investigated. Nitrogen and oxygen impurities are introduced into either Pd or Si which are subsequently annealed to form Pd2Si. The complementary techniques of Rutherford backscattering spectrometry, and N-15(p, alpha)C-12 or O-18(p, alpha)N-15 nuclear reaction, are used to investigate the behavior of nitrogen or oxygen and the alterations each creates during silicide formation. Both nitrogen and oxygen retard the silicide growth rate if initially present in Si. When they are initially in Pd, there is no significant retardation; instead, an interesting snow-plowing effect of N or O by the reaction interface of Pd2Si is observed. By using N implanted into Si as a marker, Pd and Si appear to trade roles as the moving species when the silicide front reaches the nitrogen-rich region.

A high-strength silicide phase in a stainless steel alloy designed for wear-resistant applications.

PubMed

Bowden, D; Krysiak, Y; Palatinus, L; Tsivoulas, D; Plana-Ruiz, S; Sarakinou, E; Kolb, U; Stewart, D; Preuss, M

2018-04-10

Hardfacing alloys provide strong, wear-resistant and corrosion-resistant coatings for extreme environments such as those within nuclear reactors. Here, we report an ultra-high-strength Fe-Cr-Ni silicide phase, named π-ferrosilicide, within a hardfacing Fe-based alloy. Electron diffraction tomography has allowed the determination of the atomic structure of this phase. Nanohardness testing indicates that the π-ferrosilicide phase is up to 2.5 times harder than the surrounding austenite and ferrite phases. The compressive strength of the π-ferrosilicide phase is exceptionally high and does not yield despite loading in excess of 1.6 GPa. Such a high-strength silicide phase could not only provide a new type of strong, wear-resistant and corrosion-resistant Fe-based coating, replacing more costly and hazardous Co-based alloys for nuclear applications, but also lead to the development of a new class of high-performance silicide-strengthened stainless steels, no longer reliant on carbon for strengthening.

Solution synthesis of metal silicide nanoparticles.

PubMed

McEnaney, Joshua M; Schaak, Raymond E

2015-02-02

Transition-metal silicides are part of an important family of intermetallic compounds, but the high-temperature reactions that are generally required to synthesize them preclude the formation of colloidal nanoparticles. Here, we show that palladium, copper, and nickel nanoparticles react with monophenylsilane in trioctylamine and squalane at 375 °C to form colloidal Pd(2)Si, Cu(3)Si, and Ni(2)Si nanoparticles, respectively. These metal silicide nanoparticles were screened as electrocatalysts for the hydrogen evolution reaction, and Pd(2)Si and Ni(2)Si were identified as active catalysts that require overpotentials of -192 and -243 mV, respectively, to produce cathodic current densities of -10 mA cm(-2).

Accelerated Exploration of Multi-principal Element Alloys for Structural Applications (Postprint)

DTIC Science & Technology

2015-04-27

SS phases (BCC, HCP and FCC), three silicide phases (M5Si3, M5Si4 and M3Si3), an ordered B2 phase, and two Laves phases (C14 and C15). In total, 453...alloys containing silicide phases (M5Si3, M5Si4, and M3Si2) is probably due to very negative, often below 50 kJ/mol [51 53] enthalpies of formation of...The majority of equiatomic alloys containing two or more phases are (SSþ IM) alloys.5. BCC, HCP and FCC SS phases, three silicide phases (M5Si3, M5Si4

The design and evaluation of superconducting connectors

NASA Technical Reports Server (NTRS)

Payne, J. E.

1982-01-01

The development of a superconducting connector for superconducting circuits on space flights is described. It is proposed that such connectors be used between the superconducting readout loop and the SQUID magnetometer in the Gravity Probe B experiment. Two types of connectors were developed. One type employs gold plated niobium wires making pressure connections to gold plated niobium pads. Lead-plated beryllium-copper spring contacts can replace the niobium wires. The other type is a rigid solder or weld connection between the niobium wires and the niobium pads. A description of the methods used to produce these connectors is given and their performance analyzed.

Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing

NASA Astrophysics Data System (ADS)

Novaković, M.; Popović, M.; Zhang, K.; Lieb, K. P.; Bibić, N.

2014-03-01

The effect of the interface in cobalt-silicon bilayers on the silicide phase formation and microstructure has been investigated. Thin cobalt films were deposited by electron beam evaporation to a thickness of 50 nm on crystalline silicon (c-Si) or silicon with pre-amorphized surface (a-Si). After deposition one set of samples was annealed for 2 h at 200, 300, 400, 500, 600 and 700 °C. Another set of samples was irradiated with 400 keV Xe+ ions and then annealed at the same temperatures. Phase transitions were investigated with Rutherford backscattering spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy. No silicide formation was observed up to 400 °C, for both non-irradiated and ion-irradiated samples. When increasing the annealing temperature, the non-irradiated and irradiated Co/c-Si samples showed a similar behaviour: at 500 °C, CoSi appeared as the dominant silicide, followed by the formation of CoSi2 at 600 and 700 °C. In the case of non-irradiated Co/a-Si samples, no silicide formation occurred up to 700 °C, while irradiated samples with pre-amorphized substrate (Co/a-Si) showed a phase sequence similar to that in the Co/c-Si system. The observed phase transitions are found to be consistent with predictions of the effective heat of formation model.

Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology.

PubMed

Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

2015-12-03

This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm(2), and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p(+-)n homojunction through the formation of re-grown crystalline silicon layer (~5-10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method.

Challenges of nickel silicidation in CMOS technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Breil, Nicolas; Lavoie, Christian; Ozcan, Ahmet

2015-04-01

In our paper, we review some of the key challenges associated with the Ni silicidation process in the most recent CMOS technologies. The introduction of new materials (e.g.SiGe), and of non-planar architectures bring some important changes that require fundamental investigation from a material engineering perspective. Following a discussion of the device architecture and silicide evolution through the last CMOS generations, we focus our study on a very peculiar defect, termed NiSi-Fangs. We describe a mechanism for the defect formation, and present a detailed material analysis that supports this mechanism. We highlight some of the possible metal enrichment processes of themore » nickel monosilicide such as oxidation or various RIE (Reactive Ion Etching) plasma process, leading to a metal source available for defect formation. Furthermore, we investigate the NiSi formation and re-formation silicidation differences between Si and SiGe materials, and between (1 0 0) and (1 1 1) orientations. Finally, we show that the thermal budgets post silicidation can lead to the formation of NiSi-Fangs if the structure and the processes are not optimized. Beyond the understanding of the defect and the discussion on the engineering solutions used to prevent its formation, the interest of this investigation also lies in the fundamental learning within the Ni–Pt–Si–Ge system and some additional perspective on Ni-based contacts to advanced microelectronic devices.« less

Structure and mechanical properties of a multilayer carbide-hardened niobium composite material fabricated by diffusion welding

NASA Astrophysics Data System (ADS)

Korzhov, V. P.; Ershov, A. E.; Stroganova, T. S.; Prokhorov, D. V.

2016-04-01

The structure, the bending strength, and the fracture mechanism of an artificial niobium-based composite material, which is fabricated by high-pressure diffusion welding of multilayer stacks assembled from niobium foils with a two-sided carbon coating, are studied. The microstructure of the composite material is found to consist of alternating relatively plastic layers of the solid solution of carbon in niobium and hardening niobium carbide layers. The room-temperature proportional limit of the developed composite material is threefold that of the composite material fabricated from coating-free niobium foils using the proposed technology. The proportional limit of the developed composite material and the stress corresponding to the maximum load at 1100°C are 500 and 560 MPa, respectively. The developed material is considered as an alternative to Ni-Al superalloys.

Niobium powder synthesized by calciothermic reduction of niobium hydroxide for use in capacitors

NASA Astrophysics Data System (ADS)

Baba, Masahiko; Kikuchi, Tatsuya; Suzuki, Ryosuke O.

2015-03-01

Metallic niobium powder was produced for applications in electric capacitors via calciothermic reduction of niobium hydroxide in molten CaCl2. Sub-micrometer spherical metallic particles with coral-like morphologies reflected the particle size of the starting oxide powder. A fine powder was obtained from the mixtures of niobium hydroxide and CaO or Ca(OH)2, respectively. Sintered pellets of the metallic powder showed a higher capacitance (CV) than those of the simply reduced powder without pre-treatment, because the shrinkage during sintering was smaller. The CV was as large as that of commercially sintered pellets for tantalum capacitors. Therefore, this niobium powder would act as a higher-voltage capacitor by applying chemical anodic treatment at higher voltages, and lower oxygen content in the reduced power could realize a lower leak current.

Fused slurry silicide coatings for columbium alloy reentry heat shields. Volume 2: Experimental and coating process details

NASA Technical Reports Server (NTRS)

Fitzgerald, B.

1973-01-01

The experimental and coating process details are presented. The process specifications which were developed for the formulation and application of the R-512E fused slurry silicide coating using either an acrylic or nitrocellulose base slurry system is also discussed.

Vapor deposition of hardened niobium

DOEpatents

Blocher, Jr., John M.; Veigel, Neil D.; Landrigan, Richard B.

1983-04-19

A method of coating ceramic nuclear fuel particles containing a major amount of an actinide ceramic in which the particles are placed in a fluidized bed maintained at ca. 800.degree. to ca. 900.degree. C., and niobium pentachloride vapor and carbon tetrachloride vapor are led into the bed, whereby niobium metal is deposited on the particles and carbon is deposited interstitially within the niobium. Coating apparatus used in the method is also disclosed.

Determination of niobium in rocks by an isotope dilution spectrophotometric method

USGS Publications Warehouse

Greenland, L.P.; Campbell, E.Y.

1970-01-01

Rocks and minerals are fused with sodium peroxide in the presence of carrierfree 95Nb. The fusion cake is leached with water and the precipitate dissolved in hydrofluoric-sulfuric acid mixture. Niobium is extracted into methyl isobutyl ketone and further purified by ion exchange. The amount of niobium is determined spectrophotometrically with 4-(2-pyridylazo)-resorcinol, and the chemical yield of the separations determined by counting 95Nb. This procedure is faster and less sensitive to interferences than previously proposed methods for determining niobium in rocks.The high purity of the separated niobium makes the method applicable to nearly all matrices. ?? 1970.

One hundred angstrom niobium wire

NASA Technical Reports Server (NTRS)

Cline, H. E.; Rose, R. M.; Wulff, J.

1968-01-01

Composite of fine niobium wires in copper is used to study the size and proximity effects of a superconductor in a normal matrix. The niobium rod was drawn to a 100 angstrom diameter wire on a copper tubing.

Niobium and tantalum: indispensable twins

USGS Publications Warehouse

Schulz, Klaus; Papp, John

2014-01-01

Niobium and tantalum are transition metals almost always paired together in nature. These “twins” are difficult to separate because of their shared physical and chemical properties. In 1801, English chemist Charles Hatchett uncovered an unknown element in a mineral sample of columbite; John Winthrop found the sample in a Massachusetts mine and sent it to the British Museum in London in 1734. The name columbium, which Hatchet named the new element, came from the poetic name for North America—Columbia—and was used interchangeably for niobium until 1949, when the name niobium became official. Swedish scientist Anders Ekberg discovered tantalum in 1802, but it was confused with niobium, because of their twinned properties, until 1864, when it was recognized as a separate element. Niobium is a lustrous, gray, ductile metal with a high melting point, relatively low density, and superconductor properties. Tantalum is a dark blue-gray, dense, ductile, very hard, and easily fabricated metal. It is highly conductive to heat and electricity and renowned for its resistance to acidic corrosion. These special properties determine their primary uses and make niobium and tantalum indispensable.

Field determination of microgram quantities of niobium in rocks

USGS Publications Warehouse

Ward, F.N.; Marranzino, A.P.

1955-01-01

A rapid, simple, and moderately accurate method was needed for the determination of traces of niobium in rocks. The method developed is based on the reaction of niobium(V) with thiocyanate ion in a 4M hydrochloric acid and 0.5M tartaric acid medium, after which the complex is extracted with ethyl ether. The proposed procedure is applicable to rocks containing from 50 to 2000 p.p.m. of niobium, and, with modifications, can be used on rocks containing larger amounts. Five determinations on two rocks containing 100 p.p.m. or less of niobium agree within 5 p.p.m. of the mean, and the confidence limits at the 95% level are, respectively, ??6 and ??4 p.p.m. The addition of acetone to the ether extract of the niobium thiocyanate inhibits the polymerization of the thiocyanate ion and stabilizes the solution for at least 20 hours. The proposed procedure permits the determination of 20 ?? of niobium in the presence of 1000 ?? of iron, titanium, or uranium; 500 ?? of vanadium; or 100 ?? of tungsten or molybdenum or both.

Development of fused slurry silicide coatings for tantalum reentry heat shields

NASA Technical Reports Server (NTRS)

Warnock, R. V.; Stetson, A. R.

1972-01-01

A fused slurry silicide coating was developed to provide atmospheric reentry protection for the 90Ta-lOW alloy. Overlaying the silicide with a highly refractory glass greatly improved total lifetime and reliability of the coating system. Low pressure, slow cycle lifetimes in excess of 100 cycles were consistently recorded for 1700 K - 13 and 1300 N/sq m test conditions. A minimum of 25 cycles was obtained for 1810 K - 1300 N/sq m conditions. About 50 simulated reentry cycles (variable temperature, pressure, and stress) were endured by coated 1-inch miniature heat shield panels when exposed to a maximum of 1700 K and either internal or external pressure conditions.

WSi2 in Si(1-x)Ge(x) Composites: Processing and Thermoelectric Properties

NASA Technical Reports Server (NTRS)

Mackey, Jonathan A.; Sehirlioglu, Alp; Dynys, Fred

2015-01-01

Traditional SiGe thermoelectrics have potential for enhanced figure of merit (ZT) via nano-structuring with a silicide phase, such as WSi2. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples were prepared using powder metallurgy techniques; including mechano-chemical alloying, via ball milling, and spark plasma sintering for densification. Processing, micro-structural development, and thermoelectric properties will be discussed. Additionally, couple and device level characterization will be introduced.

Synthesis of silicon nanotubes with cobalt silicide ends using anodized aluminum oxide template.

PubMed

Zhang, Zhang; Liu, Lifeng; Shimizu, Tomohiro; Senz, Stephan; Gösele, Ulrich

2010-02-05

Silicon nanotubes (SiNTs) are compatible with Si-based semiconductor technology. In particular, the small diameters and controllable structure of such nanotubes are remaining challenges. Here we describe a method to fabricate SiNTs intrinsically connected with cobalt silicide ends based on highly ordered anodic aluminum oxide (AAO) templates. Size and growth direction of the SiNTs can be well controlled via the templates. The growth of SiNTs is catalyzed by the Co nanoparticles reduced on the pore walls of the AAO after annealing, with a controllable thickness at a given growth temperature and time. Simultaneously, cobalt silicide forms on the bottom side of the SiNTs.

Initial Assessment of CSA Group Niobium Boron Based Coatings on 4340 Steel

DTIC Science & Technology

2017-07-01

Technical Report ARWSB-TR-17026 Initial Assessment of CSA Group Niobium- Boron Based Coatings on 4340 Steel C.P. Mulligan...REPORT TYPE Technical 3. DATES COVERED (From - To) 4. TITLE AND SUBTITLE Initial Assessment of CSA Group Niobium- Boron Based Coatings on 4340...metallographic mounts reported as (1) thin and (2) thick Niobium- Boron (Nb-B) type coatings on steel. CSA Group is interested in providing coatings for potential

Superconducting structure with layers of niobium nitride and aluminum nitride

DOEpatents

Murduck, James M.; Lepetre, Yves J.; Schuller, Ivan K.; Ketterson, John B.

1989-01-01

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources.

Deformation and recrystallization behavior of super high-purity niobium for SRF cavity

NASA Astrophysics Data System (ADS)

Yamaguchi, Y.; Doryo, H.; Yuasa, M.; Miyamoto, H.; Yamanaka, M.

2017-05-01

Deformation and recyrstallization behavior of pure niobium was investigated in order to clarify the origin of its low hydro-formability despite of its high ductility comparable with pure iron. It was found that pure niobium exhibits lower strain hardening in cold rolling compared with pure iron. Furthermore, in post-deformation annealing, the hardness of niobium decreased monotonously with an increase of temperature, and the typical sharp drop by recrystallization was not evident. This softening behavior was contrasted with the high-purity iron. It is suggested that niobium exhibit the so-called in-situ recrystallization possibly because of low elastic modulus and low accumulative plastic strain energy in spite of high melting temperature. The low hydro-formability of pure niobium sheets or tubes is caused by its low strain hardening and its unique plastic anisotropy which is associated with this recovered residual rolled texture.

Superconducting structure with layers of niobium nitride and aluminum nitride

DOEpatents

Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

1989-07-04

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.

Niobium oxide compositions and methods for using same

DOEpatents

Goodenough, John B; Han, Jian-Tao

2014-02-11

The disclosure relates a niobium oxide useful in anodes of secondary lithium ion batteries. Such niobium oxide has formula Li.sub.xM.sub.1-yNb.sub.yNb.sub.2O.sub.7, wherein 0.ltoreq.x.ltoreq.3, 0.ltoreq.y.ltoreq.1, and M represents Ti or Zr. The niobium oxide may be in the form of particles, which may be carbon coated. The disclosure also relates to an electrode composition containing at least one or more niobium oxides of formula Li.sub.xM.sub.1-yNb.sub.yNb.sub.2O.sub.7. The disclosure further relates to electrodes, such as anodes, and batteries containing at least one or more niobium oxides of formula Li.sub.xM.sub.1-yNb.sub.yNb.sub.2O.sub.7. Furthermore, the disclosure relates to methods of forming the above.

Synthesis, characterization, and catalytic application of ordered mesoporous carbon–niobium oxide composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Juan-Li; Gao, Shuang; Liu, Chun-Ling

2014-11-15

Graphical abstract: The ordered mesoporous carbon–niobium oxide composites have been synthesized by a multi-component co-assembly method associated with a carbonization process. - Highlights: • Ordered mesoporous carbon–niobium oxide composites were synthesized. • The content of Nb{sub 2}O{sub 5} in the composites could be tuned from 38 to 75%. • Niobium species were highly dispersed in amorphous carbon framework walls. • The composites exhibited good catalytic performance in the dehydration of fructose. - Abstract: Ordered mesoporous carbon–niobium oxide composites have been synthesized by a multi-component co-assembly method associated with a carbonization process using phenolic resol as carbon source, niobium chloride asmore » precursor and amphiphilic triblock copolymer Pluronic F127 as template. The resulting materials were characterized using a combination of techniques including differential scanning calorimetry–thermogravimetric analysis, N{sub 2} physical adsorption, X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy. The results show that with increasing the content of Nb{sub 2}O{sub 5} from 38 to 75% the specific surface area decreases from 306.4 to 124.5 m{sup 2} g{sup −1}, while the ordered mesoporous structure is remained. Niobium species is well dispersed in the amorphous carbon framework. The mesoporous carbon–niobium oxide composites exhibit high catalytic activity in the dehydration of fructose to 5-hydroxymethylfurfural. A 100% conversion of fructose and a 76.5% selectivity of 5-hydroxymethylfurfural were obtained over the carbon–niobium oxide composite containing 75% Nb{sub 2}O{sub 5} under the investigated reaction conditions.« less

Investigation of niobium surface structure and composition for improvement of superconducting radio-frequency cavities

NASA Astrophysics Data System (ADS)

Trenikhina, Yulia

Nano-scale investigation of intrinsic properties of niobium near-surface is a key to control performance of niobium superconducting radio-frequency cavities. Mechanisms responsible for the performance limitations and their empirical remedies needs to be justified in order to reproducibly control fabrication of SRF cavities with desired characteristics. The high field Q-slope and mechanism behind its cure (120°C mild bake) were investigated by comparison of the samples cut out of the cavities with high and low dissipation regions. Material evolution during mild field Q-slope nitrogen treatment was characterized using the coupon samples as well as samples cut out of nitrogen treated cavity. Evaluation of niobium near-surface state after some typical and novel cavity treatments was accomplished. Various TEM techniques, SEM, XPS, AES, XRD were used for the structural and chemical characterization of niobium near-surface. Combination of thermometry and structural temperature-dependent comparison of the cavity cutouts with different dissipation characteristics revealed precipitation of niobium hydrides to be the reason for medium and high field Q-slopes. Step-by-step effect of the nitrogen treatment processing on niobium surface was studied by analytical and structural characterization of the cavity cutout and niobium samples, which were subject to the treatment. Low concentration nitrogen doping is proposed to explain the benefit of nitrogen treatment. Chemical characterization of niobium samples before and after various surface processing (Electropolishing (EP), 800°C bake, hydrofluoric acid (HF) rinsing) showed the differences that can help to reveal the microscopic effects behind these treatments as well as possible sources of surface contamination.

Phase formation and morphological stability of ultrathin Ni-Co-Pt silicide films formed on Si(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Peng; Wu, Dongping, E-mail: dongpingwu@fudan.edu.cn; Kubart, Tomas

Ultrathin Ni, Co, and Pt films, each no more than 4 nm in thickness, as well as their various combinations are employed to investigate the competing growth of epitaxial Co{sub 1-y}Ni{sub y}Si{sub 2} films against polycrystalline Pt{sub 1-z}Ni{sub z}Si. The phase formation critically affects the morphological stability of the resulting silicide films, with the epitaxial films being superior to the polycrystalline ones. Any combination of those metals improves the morphological stability with reference to their parent individual metal silicide films. When Ni, Co, and Pt are all included, the precise initial location of Pt does little to affect the final phasemore » formation in the silicide films and the epitaxial growth of Co{sub 1-x}Ni{sub x}Si{sub 2} films is always perturbed, in accordance to thermodynamics that shows a preferential formation of Pt{sub 1-z}Ni{sub z}Si over that of Co{sub 1-y}Ni{sub y}Si{sub 2}.« less

Electrochemical Deposition of Niobium onto the Surface of Copper Using a Novel Choline Chloride-Based Ionic Liquid

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wixtroma, Alex I.; Buhlera, Jessica E.; Reece, Charles E.

2013-06-01

Recent research has shown that choline chloride-based solutions can be used to replace acid-based electrochemical polishing solutions. In this study niobium metal was successfully deposited on the surface of copper substrate via electrochemical deposition using a novel choline chloride-based ionic liquid. The niobium metal used for deposition on the Cu had been dissolved in the solution from electrochemical polishing of a solid niobium piece prior to the deposition. The visible coating on the surface of the Cu was analyzed using scanning electron microscopy (SEM) and electron dispersive x-ray spectroscopy (EDX). This deposition method effectively recycles previously dissolved niobium from electrochemicalmore » polishing.« less

Electrical insulator assembly with oxygen permeation barrier

DOEpatents

Van Der Beck, R.R.; Bond, J.A.

1994-03-29

A high-voltage electrical insulator for electrically insulating a thermoelectric module in a spacecraft from a niobium-1% zirconium alloy wall of a heat exchanger filled with liquid lithium while providing good thermal conductivity between the heat exchanger and the thermoelectric module. The insulator has a single crystal alumina layer (SxAl[sub 2]O[sub 3], sapphire) with a niobium foil layer bonded thereto on the surface of the alumina crystal facing the heat exchanger wall, and a molybdenum layer bonded to the niobium layer to act as an oxygen permeation barrier to preclude the oxygen depleting effects of the lithium from causing undesirable niobium-aluminum intermetallic layers near the alumina-niobium interface. 3 figures.

{sup 45}Sc Solid State NMR studies of the silicides ScTSi (T=Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harmening, Thomas; Eckert, Hellmut, E-mail: eckerth@uni-muenster.de; Fehse, Constanze M.

The silicides ScTSi (T=Fe, Co, Ni, Cu, Ru, Rh, Pd, Ir, Pt) were synthesized by arc-melting and characterized by X-ray powder diffraction. The structures of ScCoSi, ScRuSi, ScPdSi, and ScIrSi were refined from single crystal diffractometer data. These silicides crystallize with the TiNiSi type, space group Pnma. No systematic influences of the {sup 45}Sc isotropic magnetic shift and nuclear electric quadrupolar coupling parameters on various structural distortion parameters calculated from the crystal structure data can be detected. {sup 45}Sc MAS-NMR data suggest systematic trends in the local electronic structure probed by the scandium atoms: both the electric field gradients andmore » the isotropic magnetic shifts relative to a 0.2 M aqueous Sc(NO{sub 3}){sub 3} solution decrease with increasing valence electron concentration and within each T group the isotropic magnetic shift decreases monotonically with increasing atomic number. The {sup 45}Sc nuclear electric quadrupolar coupling constants are generally well reproduced by quantum mechanical electric field gradient calculations using the WIEN2k code. Highlights: Black-Right-Pointing-Pointer Arc-melting synthesis of silicides ScTSi. Black-Right-Pointing-Pointer Single crystal X-ray data of ScCoSi, ScRuSi, ScPdSi, and ScIrSi. Black-Right-Pointing-Pointer {sup 45}Sc solid state NMR of silicides ScTSi.« less

Aluminium alloyed iron-silicide/silicon solar cells: A simple approach for low cost environmental-friendly photovoltaic technology

PubMed Central

Kumar Dalapati, Goutam; Masudy-Panah, Saeid; Kumar, Avishek; Cheh Tan, Cheng; Ru Tan, Hui; Chi, Dongzhi

2015-01-01

This work demonstrates the fabrication of silicide/silicon based solar cell towards the development of low cost and environmental friendly photovoltaic technology. A heterostructure solar cells using metallic alpha phase (α-phase) aluminum alloyed iron silicide (FeSi(Al)) on n-type silicon is fabricated with an efficiency of 0.8%. The fabricated device has an open circuit voltage and fill-factor of 240 mV and 60%, respectively. Performance of the device was improved by about 7 fold to 5.1% through the interface engineering. The α-phase FeSi(Al)/silicon solar cell devices have promising photovoltaic characteristic with an open circuit voltage, short-circuit current and a fill factor (FF) of 425 mV, 18.5 mA/cm2, and 64%, respectively. The significant improvement of α-phase FeSi(Al)/n-Si solar cells is due to the formation p+−n homojunction through the formation of re-grown crystalline silicon layer (~5–10 nm) at the silicide/silicon interface. Thickness of the regrown silicon layer is crucial for the silicide/silicon based photovoltaic devices. Performance of the α-FeSi(Al)/n-Si solar cells significantly depends on the thickness of α-FeSi(Al) layer and process temperature during the device fabrication. This study will open up new opportunities for the Si based photovoltaic technology using a simple, sustainable, and los cost method. PMID:26632759

Study of nickel silicide formation by physical vapor deposition techniques

NASA Astrophysics Data System (ADS)

Pancharatnam, Shanti

Metal silicides are used as contacts to the highly n-doped emitter in photovoltaic devices. Thin films of nickel silicide (NiSi) are of particular interest for Si-based solar cells, as they form at lower temperature and consume less silicon. However, interfacial oxide limits the reduction in sheet resistance. Hence, different diffusion barriers were investigated with regard to optimizing the conductivity and thermal stability. The formation of NiSi, and if it can be doped to have good contact with the n-side of a p-n junction were studied. Reduction of the interfacial oxide by the interfacial Ti layer to allow the formation of NiSi was observed. Silicon was treated in dilute hydrofluoric acid for removing the surface oxide layer. Ni and a Ti diffusion barrier were deposited on Si by physical vapor deposition (PVD) methods - electron beam evaporation and sputtering. The annealing temperature and time were varied to observe the stability of the deposited film. The films were then etched to observe the retention of the silicide. Characterization was done using scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and Rutherford back scattering (RBS). Sheet resistance was measured using the four-point probe technique. Annealing temperatures from 300°C showed films began to agglomerate indicating some diffusion between Ni and Si in the Ti layer, also supported by the compositional analysis in the Auger spectra. Films obtained by evaporation and sputtering were of high quality in terms of coverage over substrate area and uniformity. Thicknesses of Ni and Ti were optimized to 20 nm and 10 nm respectively. Resistivity was low at these thicknesses, and reduced by about half post annealing at 300°C for 8 hours. Thus a low resistivity contact was obtained at optimized thicknesses of the metal layers. It was also shown that some silicide formation occurs at temperatures starting from 300°C and can thus be used to make good silicide contacts.

A niobium oxide-tantalum oxide selector-memristor self-aligned nanostack

NASA Astrophysics Data System (ADS)

Diaz Leon, Juan J.; Norris, Kate J.; Yang, J. Joshua; Sevic, John F.; Kobayashi, Nobuhiko P.

2017-03-01

The integration of nonlinear current-voltage selectors and bi-stable memristors is a paramount step for reliable operation of crossbar arrays. In this paper, the self-aligned assembly of a single nanometer-scale device that contains both a selector and a memristor is presented. The two components (i.e., selector and memristor) are vertically assembled via a self-aligned fabrication process combined with electroforming. In designing the device, niobium oxide and tantalum oxide are chosen as materials for selector and memristor, respectively. The formation of niobium oxide is visualized by exploiting the self-limiting reaction between niobium and tantalum oxide; crystalline niobium (di)oxide forms at the interface between metallic niobium and tantalum oxide via electrothermal heating, resulting in a niobium oxide selector self-aligned to a tantalum oxide memristor. A steady-state finite element analysis is used to assess the electrothermal heating expected to occur in the device. Current-voltage measurements and structural/chemical analyses conducted for the virgin device, the electroforming process, and the functional selector-memristor device are presented. The demonstration of a self-aligned, monolithically integrated selector-memristor device would pave a practical pathway to various circuits based on memristors attainable at manufacturing scales.

Preparation and Characterization of Single Crystals and Epitaxial Layers of Silicon Carbide by Molten Salt Electrolysis.

DTIC Science & Technology

1980-10-01

requires the simultaneous cathodic deposi- tion of silicon and carbon under conditions where reaction to form SiC will occur. In this study sodium or...reactivity with the melt. Nickel suffers from the disadvantage that it reacts with silicon to form nickel silicides , but the concentration of silicides in

Charge retention characteristics of silicide-induced crystallized polycrystalline silicon floating gate thin-film transistors for active matrix organic light-emitting diode.

PubMed

Park, Jae Hyo; Son, Se Wan; Byun, Chang Woo; Kim, Hyung Yoon; Joo, So Na; Lee, Yong Woo; Yun, Seung Jae; Joo, Seung Ki

2013-10-01

In this work, non-volatile memory thin-film transistor (NVM-TFT) was fabricated by nickel silicide-induced laterally crystallized (SILC) polycrystalline silicon (poly-Si) as the active layer. The nickel seed silicide-induced crystallized (SIC) poly-Si was used as storage layer which is embedded in the gate insulator. The novel unit pixel of active matrix organic light-emitting diode (AMOLED) using NVM-TFT is proposed and investigated the electrical and optical performance. The threshold voltage shift showed 17.2 V and the high reliability of retention characteristic was demonstrated until 10 years. The retention time can modulate the recharge refresh time of the unit pixel of AMOLED up to 5000 sec.

Electrical insulator assembly with oxygen permeation barrier

DOEpatents

Van Der Beck, Roland R.; Bond, James A.

1994-01-01

A high-voltage electrical insulator (21) for electrically insulating a thermoelectric module (17) in a spacecraft from a niobium-1% zirconium alloy wall (11) of a heat exchanger (13) filled with liquid lithium (16) while providing good thermal conductivity between the heat exchanger and the thermoelectric module. The insulator (21) has a single crystal alumina layer (SxAl.sub.2 O.sub.3, sapphire) with a niobium foil layer (32) bonded thereto on the surface of the alumina crystal (26) facing the heat exchanger wall (11), and a molybdenum layer (31) bonded to the niobium layer (32) to act as an oxygen permeation barrier to preclude the oxygen depleting effects of the lithium from causing undesirable niobium-aluminum intermetallic layers near the alumina-niobium interface.

Nonresonant valence-to-core x-ray emission spectroscopy of niobium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ravel, Bruce; Kropf, A. Jeremy; Yang, Dali

The valence-to-core (V2C) portion of x-ray emission spectroscopy (XES) measures the electron states close to the Fermi level. These states are involved in bonding, thus providing a measure of the chemistry of the material. For this paper, we show the V2C XES spectra for several niobium compounds. The Kβ" peak in the V2C XES results from the transition of a ligand 2s electron into the 1s core-hole of the niobium, a transition allowed by hybridization with the niobium 4p . This location in energy of this weak peak shows a strong ligand dependence, thus providing a sensitive probe of themore » ligand environment about the niobium.« less

Nonresonant valence-to-core x-ray emission spectroscopy of niobium

DOE PAGES

Ravel, Bruce; Kropf, A. Jeremy; Yang, Dali; ...

2018-03-23

The valence-to-core (V2C) portion of x-ray emission spectroscopy (XES) measures the electron states close to the Fermi level. These states are involved in bonding, thus providing a measure of the chemistry of the material. For this paper, we show the V2C XES spectra for several niobium compounds. The Kβ" peak in the V2C XES results from the transition of a ligand 2s electron into the 1s core-hole of the niobium, a transition allowed by hybridization with the niobium 4p . This location in energy of this weak peak shows a strong ligand dependence, thus providing a sensitive probe of themore » ligand environment about the niobium.« less

Proton in SRF Niobium

NASA Astrophysics Data System (ADS)

Wallace, John Paul

2011-03-01

Hydrogen is a difficult impurity to physically deal with in superconducting radio frequency (SRF) niobium, therefore, its properties in the metals should be well understood to allow the metal's superconducting properties to be optimized for minimum loss in the construction of resonant accelerator cavities. It is known that hydrogen is a paramagnetic impurity in niobium from NMR studies. This paramagnetism and its effect on superconducting properties are important to understand. To that end analytical induction measurements aimed at isolating the magnetic properties of hydrogen in SRF niobium are introduced along with optical reflection spectroscopy which is also sensitive to the presence of hydrogen. From the variety, magnitude and rapid kinetics found in the optical and magnetic properties of niobium contaminated with hydrogen forced a search for an atomic model. This yielded quantum mechanical description that correctly generates the activation energy for diffusion of the proton and its isotopes not only in niobium but the remaining metals for which data is available. This interpretation provides a frame work for understanding the individual and collective behavior of protons in metals.

Qualification of niobium materials for superconducting radio frequency cavity applications: View of a condensed matter physicist

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roy, S. B., E-mail: sbroy@rrcat.gov.in; Myneni, G. R., E-mail: rao@jlab.org

2015-12-04

We address the issue of qualifications of the niobium materials to be used for superconducting radio frequency (SCRF) cavity fabrications, from the point of view of a condensed matter physicist/materials scientist. We focus on the particular materials properties of niobium required for the functioning a SCRF cavity, and how to optimize the same properties for the best SCRF cavity performance in a reproducible manner. In this way the niobium materials will not necessarily be characterized by their purity alone, but in terms of those materials properties, which will define the limit of the SCRF cavity performance and also other relatedmore » material properties, which will help to sustain this best SCRF cavity performance. Furthermore we point out the need of standardization of the post fabrication processing of the niobium-SCRF cavities, which does not impair the optimized superconducting and thermal properties of the starting niobium-materials required for the reproducible performance of the SCRF cavities according to the design values.« less

ON THE GEOCHEMISTRY OF NIOBIUM AND TANTALUM IN CLAYS (in Russian)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pachadzhanov, D.N.

1963-10-01

With the aid of the spectral method with a preliminary enrichment in tannin, the niobium and tantalum content was determined in some humid and arid clays of the Russian platform. The investigated samples were composed of 354 specimens. The average content of niobium in humid clays is 0.0020%, of tantalum 0.00024% (the Nb/Ta ratio is 8.4) and in arid clays is respectively the content of niobium 0.00133% and the content of tantalum 0.00009% (the Nb/Ta ratio is 14.8). The average value of the content of niobium content for all studied clays is 0.00183% and of the tantalum content 0.00020%, themore » Nb/Ta ratio being 9.1. In clays an interconnection of niobium with tantalum, as well as with aluminium, titanium, zirconium, and hafnium was observed. However, on the background of this connection some separation of the named elements is noted. A tendency for the Nb/Ta ratio shift from the region of matter removal towards the center of the marine basin was observed. The study of niobium and tantalum distribution over different clay fractions showed that one part of elements is connected with zircon and titanium minerals in aleuosand fraction (0.1-- 0.01 mm). Another, approximately similar part is contained in the proper clay fraction (<0. 01 mm), the tantalum somewhat more concentrating in the aleurosand fraction and niobium in the clay fraction. (P.C.H.)« less

ESD protection design for advanced CMOS

NASA Astrophysics Data System (ADS)

Huang, Jin B.; Wang, Gewen

2001-10-01

ESD effects in integrated circuits have become a major concern as today's technologies shrink to sub-micron/deep- sub-micron dimensions. The thinner gate oxide and shallower junction depth used in the advanced technologies make them very vulnerable to ESD damages. The advanced techniques like silicidation and STI (shallow trench insulation) used for improving other device performances make ESD design even more challenging. For non-silicided technologies, a certain DCGS (drain contact to gate edge spacing) is needed to achieve ESD hardness for nMOS output drivers and nMOS protection transistors. The typical DCGS values are 4-5um and 2-3um for 0.5um and 0.25um CMOS, respectively. The silicidation reduces the ballast resistance provided by DCGS with at least a factor of 10. As a result, scaling of the ESD performance with device width is lost and even zero ESD performance is reported for standard silicided devices. The device level ESD design is focused in this paper, which includes GGNMOS (gate grounded NMOS) and GCNMOS (gate coupled NMOS). The device level ESD testing including TLP (transmission line pulse) is given. Several ESD issues caused by advanced technologies have been pointed out. The possible solutions have been developed and summarized including silicide blocking, process optimization, back-end ballasting, and new protection scheme, dummy gate/n-well resistor ballsting, etc. Some of them require process cost increase, and others provide novel, compact, and simple design but involving royalty/IP (intellectual property) issue. Circuit level ESD design and layout design considerations are covered. The top-level ESD protection strategies are also given.

Extraction spectrophotometric determination of niobium in rocks with sulfochlorophenol S

USGS Publications Warehouse

Childress, A.E.; Greenland, L.P.

1980-01-01

After acid decomposition and potassium pyrosulfate fusion, niobium (1-26 ppm) is separated from interfering elements by extraction into methyl isobutyl ketone from 6 M H2SO4-2 M HF and back-extracted into water. The niobium-sulfochloro-phenol S complex is extracted into amyl alcohol. ?? 1980.

Rare-Earth Ions in Niobium-Based Devices as a Quantum Memory: Magneto-Optical Effects on Room Temperature Electrical Transport

DTIC Science & Technology

2016-09-01

rare-earth neodymium by ion implantation in thin films of niobium and niobium-based heterostructure devices. We model the ion implantation process...the films and devices so they can properly designed and optimized for utility as quantum memory. We find that the magnetic field has a strong effect...thin films of niobium. Simulations are made at low 1013 cm-2 and high 1014 cm-2 dose at 60 keV. At high dose, disorder induced is significantly

Sputtered Thin Film Research

DTIC Science & Technology

1974-11-01

yield (100) oriented wafers, which were lapped and chemi-mechanically polished in sulf uric-peroxide or sodium hypochlorite etches. Prior to mounting...This material will viot oxidize, melt, or diffuse during the subsequent high temperature processing. Platinum silicide contacts are used because...formation of the platinum silicide contacts, the gate region was opened and the wafer was placed in the sput- tering chamber. The same deposition

Electronic and chemical structure of metal-silicon interfaces

NASA Technical Reports Server (NTRS)

Grunthaner, P. J.; Grunthaner, F. J.

1984-01-01

This paper reviews our current understanding of the near-noble metal silicides and the interfaces formed with Si(100). Using X-ray photoemission spectroscopy, we compare the chemical composition and electronic structure of the room temperature metal-silicon and reacted silicide-silicon interfaces. The relationship between the interfacial chemistry and the Schottky barrier heights for this class of metals on silicon is explored.

A Study on Characterization of Light-Induced Electroless Plated Ni Seed Layer and Silicide Formation for Solar Cell Application

NASA Astrophysics Data System (ADS)

Takaloo, Ashkan Vakilipour; Joo, Seung Ki; Es, Firat; Turan, Rasit; Lee, Doo Won

2018-03-01

Light-induced electroless plating (LIEP) is an easy and inexpensive method that has been widely used for seed layer deposition of Nickel/Copper (Ni/Cu)-based metallization in the solar cell. In this study, material characterization aspects of the Ni seed layer and Ni silicide formation at different bath conditions and annealing temperatures on the n-side of a silicon diode structure have been examined to achieve the optimum cell contacts. The effects of morphology and chemical composition of Ni film on its electrical conductivity were evaluated and described by a quantum mechanical model. It has been found that correlation exists between the theoretical and experimental conductivity of Ni film. Residual stress and phase transformation of Ni silicide as a function of annealing temperature were evaluated using Raman and XRD techniques. Finally, transmission line measurement (TLM) technique was employed to determine the contact resistance of Ni/Si stack after thermal treatment and to understand its correlation with the chemical-structural properties. Results indicated that low electrical resistive mono-silicide (NiSi) phase as low as 5 mΩ.cm2 was obtained.

Large-area Co-silicide nanodot arrays produced by colloidal nanosphere lithography and thermal annealing.

PubMed

Cheng, S L; Wong, S L; Lu, S W; Chen, H

2008-09-01

We report here the successful fabrication of large-area size-tunable periodic arrays of cobalt and Co-silicide nanodots on silicon substrates by employing the colloidal nanosphere lithography (NSL) technique and heat treatments. The growth of low-resistivity epitaxial CoSi(2) was found to be more favorable for the samples with smaller Co nanodot sizes. The sizes of the epitaxial CoSi(2) nanodots can be tuned from 50 to 100 nm by varying the diameter of the colloidal spheres and annealing temperatures. The epitaxial CoSi(2) nanodots were found to grow with an epitaxial orientation with respect to the (001)Si substrates: [001]CoSi(2)//[001]Si and (200)CoSi(2)//(400)Si. From the results of planview HRTEM, XTEM, and SAED analysis, the epitaxial CoSi(2) nanodots were identified to be inverse pyramids in shape, and the average sizes of the faceted silicide nanodots were measured to decrease with annealing temperature. The observed results present the exciting prospect that with appropriate controls, the colloidal NSL technique promises to facilitate the growth of a variety of well-ordered silicide nanodots with selected shape, size, and periodicity.

Electrical characterization of n/p-type nickel silicide/silicon junctions by Sb segregation.

PubMed

Jun, Myungsim; Park, Youngsam; Hyun, Younghoon; Choi, Sung-Jin; Zyung, Taehyung; Jang, Moongyu

2011-08-01

In this paper, n/p-type nickel-silicided Schottky diodes were fabricated by incorporating antimony atoms near the nickel silicide/Si junction interface and the electrical characteristics were studied through measurements and simulations. The effective Schottky barrier height (SBH) for electron, extracted from the thermionic emission model, drastically decreased from 0.68 to less than 0.1 eV while that for hole slightly increased from 0.43 to 0.53 eV. In order to identify the current conduction mechanisms, the experimental current-temperature-voltage characteristics for the n-type diode were fitted based on various models for transport of charge carrier in Schottky diodes. As the result, the large change in effective SBH for electron is ascribed to trap-assisted tunneling rather than barrier height inhomogeneity.

The formation of magnetic silicide Fe3Si clusters during ion implantation

NASA Astrophysics Data System (ADS)

Balakirev, N.; Zhikharev, V.; Gumarov, G.

2014-05-01

A simple two-dimensional model of the formation of magnetic silicide Fe3Si clusters during high-dose Fe ion implantation into silicon has been proposed and the cluster growth process has been computer simulated. The model takes into account the interaction between the cluster magnetization and magnetic moments of Fe atoms random walking in the implanted layer. If the clusters are formed in the presence of the external magnetic field parallel to the implanted layer, the model predicts the elongation of the growing cluster in the field direction. It has been proposed that the cluster elongation results in the uniaxial magnetic anisotropy in the plane of the implanted layer, which is observed in iron silicide films ion-beam synthesized in the external magnetic field.

Thermoelectric silicides: A review

NASA Astrophysics Data System (ADS)

Nozariasbmarz, Amin; Agarwal, Aditi; Coutant, Zachary A.; Hall, Michael J.; Liu, Jie; Liu, Runze; Malhotra, Abhishek; Norouzzadeh, Payam; Öztürk, Mehmet C.; Ramesh, Viswanath P.; Sargolzaeiaval, Yasaman; Suarez, Francisco; Vashaee, Daryoosh

2017-05-01

Traditional research on thermoelectric materials focused on improving the figure-of-merit z T to enhance the energy conversion efficiency. With further growth and commercialization of thermoelectric technology beyond niche applications, other factors such as materials availability, toxicity, cost, recyclability, thermal stability, chemical and mechanical properties, and ease of fabrication become important for making viable technologies. Several silicide alloys were identified that have the potential to fulfill these requirements. These materials are of interest due to their abundancy in earth’s crust (e.g., silicon), non-toxicity, and good physical and chemical properties. In this paper, an overview of the silicide thermoelectrics from traditional alloys to advanced material structures is presented. In addition, some of the most effective approaches as well as fundamental physical concepts for designing and developing efficient thermoelectric materials are presented and future perspectives are discussed.

Enhanced light absorption in waveguide Schottky photodetector integrated with ultrathin metal/silicide stripe.

PubMed

Guo, Jingshu; Wu, Zhiwei; Zhao, Yanli

2017-05-01

We investigate the light absorption enhancement in waveguide Schottky photodetector integrated with ultrathin metal/silicide stripe, which can provide high internal quantum efficiency. By using aab0-quasi-TE hybrid modes for the first time, a high absorptance of 95.6% is achieved in 5 nm thick Au stripe with area of only 0.14 μm², without using resonance structure. In theory, the responsivity, dark current, and 3dB bandwidth of the corresponding device are 0.146 A/W, 8.03 nA, and 88 GHz, respectively. For most silicides, the quasi-TM mode should be used in this device, and an optimized PtSi device has a responsivity of 0.71 A/W and a dark current of 35.9 μA.

Titanium-based silicide quantum dot superlattices for thermoelectrics applications.

PubMed

Savelli, Guillaume; Stein, Sergio Silveira; Bernard-Granger, Guillaume; Faucherand, Pascal; Montès, Laurent; Dilhaire, Stefan; Pernot, Gilles

2015-07-10

Ti-based silicide quantum dot superlattices (QDSLs) are grown by reduced-pressure chemical vapor deposition. They are made of titanium-based silicide nanodots scattered in an n-doped SiGe matrix. This is the first time that such nanostructured materials have been grown in both monocrystalline and polycrystalline QDSLs. We studied their crystallographic structures and chemical properties, as well as the size and the density of the quantum dots. The thermoelectric properties of the QDSLs are measured and compared to equivalent SiGe thin films to evaluate the influence of the nanodots. Our studies revealed an increase in their thermoelectric properties-specifically, up to a trifold increase in the power factor, with a decrease in the thermal conductivity-making them very good candidates for further thermoelectric applications in cooling or energy-harvesting fields.

Carbon mediated reduction of silicon dioxide and growth of copper silicide particles in uniform width channels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pizzocchero, Filippo; Bøggild, Peter; Booth, Timothy J.

We show that surface arc-discharge deposited carbon plays a critical intermediary role in the breakdown of thermally grown oxide diffusion barriers of 90 nm on a silicon wafer at 1035 °C in an Ar/H{sub 2} atmosphere, resulting in the formation of epitaxial copper silicide particles in ≈ 10 μm wide channels, which are aligned with the intersections of the (100) surface of the wafer and the (110) planes on an oxidized silicon wafer, as well as endotaxial copper silicide nanoparticles within the wafer bulk. We apply energy dispersive x-ray spectroscopy, in combination with scanning and transmission electron microscopy of focusedmore » ion beam fabricated lammelas and trenches in the structure to elucidate the process of their formation.« less

Processing of Niobium-Lined M240 Machine Gun Barrels

DTIC Science & Technology

2014-11-01

different materials (the gun steel and the niobium liner). A large chunk of the niobium liner in barrel 2 was torn away from the end of the liner at...it to increase the frictional bond between the liner and gun steel . The barrels with liners were hammer forged by FN. FN experienced some...

Evaluation of niobium as candidate electrode material for DC high voltage photoelectron guns

DOE PAGES

BastaniNejad, M.; Mohamed, Md. Abdullah; Elmustafa, A. A.; ...

2012-08-17

In this study, the field emission characteristics of niobium electrodes were compared to those of stainless steel electrodes using a DC high voltage field emission test apparatus. A total of eight electrodes were evaluated: two 304 stainless steel electrodes polished to mirror-like finish with diamond grit and six niobium electrodes (two single-crystal, two large-grain and two fine-grain) that were chemically polished using a buffered-chemical acid solution. Upon the first application of high voltage, the best large-grain and single-crystal niobium electrodes performed better than the best stainless steel electrodes, exhibiting less field emission at comparable voltage and gradient. In all cases,more » field emission from electrodes (stainless steel and/or niobium) could be significantly reduced and sometimes completely eliminated, by introducing krypton gas into the vacuum chamber while the electrode was biased at high voltage. Of all the electrodes tested, a large-grain niobium electrode performed the best, exhibiting no measurable field emission (< 10 pA) at 225 kV with 20 mm cathode/anode gap, corresponding to a gradient of 18.7 MV/m.« less

Evaluation of Niobium as Candidate Electrode Material for DC High Voltage Photoelectron Guns

NASA Technical Reports Server (NTRS)

BastaniNejad, M.; Mohamed, Abdullah; Elmustafa, A. A.; Adderley, P.; Clark, J.; Covert, S.; Hansknecht, J.; Hernandez-Garcia, C.; Poelker, M.; Mammei, R.;

An improved oxygen diffusion model to explain the effect of low-temperature baking on high field losses in niobium superconducting cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ciovati, Gianluigi

Radio-frequency (RF) superconducting cavities made of high purity niobium are widely used to accelerate charged particle beams in particle accelerators. The major limitation to achieve RF field values approaching the theoretical limit for niobium is represented by ''anomalous'' losses which degrade the quality factor of the cavities starting at peak surface magnetic fields of about 100 mT, in absence of field emission. These high field losses are often referred to as ''Q-drop''. It has been observed that the Q-drop is drastically reduced by baking the cavities at 120 C for about 48 h under ultrahigh vacuum. An improved oxygen diffusionmore » model for the niobium-oxide system is proposed to explain the benefit of the low-temperature baking on the Q-drop in niobium superconducting rf cavities. The model shows that baking at 120 C for 48 h allows oxygen to diffuse away from the surface, and therefore increasing the lower critical field towards the value for pure niobium.« less

Method of low tantalum amounts determination in niobium and its compounds by ICP-OES technique.

PubMed

Smolik, Marek; Turkowska, Magdalena

2013-10-15

A method of determination of low amounts of tantalum in niobium and niobium compounds without its prior separation by means of inductively coupled plasma optical emission spectrometry (ICP-OES) has been worked out. The method involves dissolution of the analyzed samples of niobium as well as its various compounds (oxides, fluorides, chlorides, niobates(V)) in fluoride environments, precipitation of sparingly soluble niobic(tantalic) acid (Nb2O5(Ta2O5) · xH2O), converting them into soluble complex compounds by means of oxalic acid with addition of hydrogen peroxide and finally analyzing directly obtained solutions by ICP-OES. This method permits determination of Ta in niobium at the level of 10(-3)% with relatively good precision (≤ 8% RSD) and accuracy (recovery factor: 0.9-1.1). Relative differences in the results obtained by two independent methods (ICP-OES and ICP-MS) do not exceed 14%, and other elements present in niobium compounds (Ti, W, Zr, Hf, V, Mo, Fe, Cr) at the level of 10(-2)% do not affect determination. © 2013 Elsevier B.V. All rights reserved.

Ultrathin niobium nanofilms on fiber optical tapers - a new route towards low-loss hybrid plasmonic modes

NASA Astrophysics Data System (ADS)

Wieduwilt, Torsten; Tuniz, Alessandro; Linzen, Sven; Goerke, Sebastian; Dellith, Jan; Hübner, Uwe; Schmidt, Markus A.

2015-11-01

Due to the ongoing improvement in nanostructuring technology, ultrathin metallic nanofilms have recently gained substantial attention in plasmonics, e.g. as building blocks of metasurfaces. Typically, noble metals such as silver or gold are the materials of choice, due to their excellent optical properties, however they also possess some intrinsic disadvantages. Here, we introduce niobium nanofilms (~10 nm thickness) as an alternate plasmonic platform. We demonstrate functionality by depositing a niobium nanofilm on a plasmonic fiber taper, and observe a dielectric-loaded niobium surface-plasmon excitation for the first time, with a modal attenuation of only 3-4 dB/mm in aqueous environment and a refractive index sensitivity up to 15 μm/RIU if the analyte index exceeds 1.42. We show that the niobium nanofilm possesses bulk optical properties, is continuous, homogenous, and inert against any environmental influence, thus possessing several superior properties compared to noble metal nanofilms. These results demonstrate that ultrathin niobium nanofilms can serve as a new platform for biomedical diagnostics, superconducting photonics, ultrathin metasurfaces or new types of optoelectronic devices.

First-Principles Study of Carbon and Vacancy Structures in Niobium

DOE PAGES

Ford, Denise C.; Zapol, Peter; Cooley, Lance D.

2015-04-03

The interstitial chemical impurities hydrogen, oxygen, nitrogen, and carbon are important for niobium metal production, and particularly for the optimization of niobium SRF technology. These atoms are present in refined sheets and can be absorbed into niobium during processing treatments, resulting in changes to the residual resistance and the performance of SRF cavities. A first-principles approach is taken to study the properties of carbon in niobium, and the results are compared and contrasted with the properties of the other interstitial impurities. The results indicate that C will likely form precipitates or atmospheres around defects rather than strongly bound complexes withmore » other impurities. Based on the analysis of carbon and hydrogen near niobium lattice vacancies and small vacancy chains and clusters, the formation of extended carbon chains and hydrocarbons is not likely to occur. Association of carbon with hydrogen atoms can, however, occur through the strain fields created by interstitial binding of the impurity atoms. In conclusion, calculated electronic densities of states indicate that interstitial C may have a similar effect as interstitial O on the superconducting transition temperature of Nb.« less

International strategic minerals inventory summary report; niobium (columbium) and tantalum

USGS Publications Warehouse

Crockett, R.N.; Sutphin, D.M.

1993-01-01

Major world resources of niobium and tantalum are described in this summary report of information in the International Strategic Minerals Inventory (ISMI). ISMI is a cooperative data-collection effort of earth-science and mineral-resource agencies in Australia, Canada, the Federal Republic of Germany, the Republic of South Africa, the United Kingdom, and the United States of America. Part I of this report presents an overview of the resources and potential supply of niobium and tantalum based on inventory information; Part II contains tables of both geologic and mineral-resource information and includes production data collected by ISMI participants. Niobium is used principally as an alloying element in special steels and superalloys, and tantalum is used mainly in electronics. Minerals in the columbite-tantalite series are principal ore minerals of niobium and tantalum. Pyrochlore is a principal source of niobium. These minerals are found in carbonatite, certain rocks in alkaline igneous complexes, pegmatite, and placer deposits. ISMI estimates show that there are over 7 million metric tons of niobium and almost 0.5 million metric tons of tantalum in known deposits, outside of China and the former Soviet Union, for which reliable estimates have been made. Brazilian deposits, followed by Canadian deposits, contain by far the largest source of niobium. Tantalum production is spread widely among several countries, and Brazil and Canada are the most significant of these producers. Brazil's position is further strengthened by potential byproduct columbite from tin mining. Present economically exploitable resources of niobium appear to be sufficient for the near future, but Brazil will continue to be the predominant world supplier of ferrocolumbium. Tantalum, a byproduct of tin production, has been captive to the fluctuations of that market, but resources in pegmatite in Canada and Australia make it likely that future increases in the present modest demand will be met.

Characteristics of a promising new thermoelectric material - Ruthenium silicide

NASA Technical Reports Server (NTRS)

Ohta, Toshitaka; Vining, Cronin B.; Allevato, Camillo E.

1991-01-01

A preliminary study on arc-melted samples has indicated that ruthenium silicide has the potential to obtain figure-of-merit values four times higher than that of conventional silicon-germanium material. In order to realize the high figure-of-merit values, high-quality crystal from the melt is needed. A Bridgman-like method has been employed and has realized much better crystals than arc-melted ones.

Stacked Metal Silicide/Silicon Far-Infrared Detectors

NASA Technical Reports Server (NTRS)

Maserjian, Joseph

1988-01-01

Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

SEPARATION OF URANIUM FROM ZIRCONIUM AND NIOBIUM BY SOLVENT EXTRACTION

DOEpatents

Voiland, E.E.

1958-05-01

A process for separation of the uranium from zirconium and/or niobium values contained in 3 to 7M aqueous nitric acid solutions is described. This is accomplished by adding phosphoric acid anions to the nitric acid solution containing the uranium, zirconium, and/or niobium in an amount sufficient to make the solution 0.05 to 0.2M in phosphate ion and contacting the solution with an organic water-immiscible solvent such as MEK, whereby the uranyl values are taken up by the extract phase while the zirconium and niobium preferentially remain in the aqueous raffinate.

On the Alloying and Properties of Tetragonal Nb₅Si₃ in Nb-Silicide Based Alloys.

PubMed

Tsakiropoulos, Panos

2018-01-04

The alloying of Nb₅Si₃ modifies its properties. Actual compositions of (Nb,TM)₅X₃ silicides in developmental alloys, where X = Al + B + Ge + Si + Sn and TM is a transition and/or refractory metal, were used to calculate the composition weighted differences in electronegativity (Δχ) and an average valence electron concentration (VEC) and the solubility range of X to study the alloying and properties of the silicide. The calculations gave 4.11 < VEC < 4.45, 0.103 < Δχ < 0.415 and 33.6 < X < 41.6 at.%. In the silicide in Nb-24Ti-18Si-5Al-5Cr alloys with single addition of 5 at.% B, Ge, Hf, Mo, Sn and Ta, the solubility range of X decreased compared with the unalloyed Nb₅Si₃ or exceeded 40.5 at.% when B was with Hf or Mo or Sn and the Δχ decreased with increasing X. The Ge concentration increased with increasing Ti and the Hf concentration increased and decreased with increasing Ti or Nb respectively. The B and Sn concentrations respectively decreased and increased with increasing Ti and also depended on other additions in the silicide. The concentration of Sn was related to VEC and the concentrations of B and Ge were related to Δχ. The alloying of Nb₅Si₃ was demonstrated in Δχ versus VEC maps. Effects of alloying on the coefficient of thermal expansion (CTE) anisotropy, Young's modulus, hardness and creep data were discussed. Compared with the hardness of binary Nb₅Si₃ (1360 HV), the hardness increased in silicides with Ge and dropped below 1360 HV when Al, B and Sn were present without Ge. The Al effect on hardness depended on other elements substituting Si. Sn reduced the hardness. Ti or Hf reduced the hardness more than Cr in Nb₅Si₃ without Ge. The (Nb,Hf)₅(Si,Al)₃ had the lowest hardness. VEC differentiated the effects of additions on the hardness of Nb₅Si₃ alloyed with Ge. Deterioration of the creep of alloyed Nb₅Si₃ was accompanied by decrease of VEC and increase or decrease of Δχ depending on alloying addition(s).

Surface processing for bulk niobium superconducting radio frequency cavities

NASA Astrophysics Data System (ADS)

Kelly, M. P.; Reid, T.

2017-04-01

The majority of niobium cavities for superconducting particle accelerators continue to be fabricated from thin-walled (2-4 mm) polycrystalline niobium sheet and, as a final step, require material removal from the radio frequency (RF) surface in order to achieve performance needed for use as practical accelerator devices. More recently bulk niobium in the form of, single- or large-grain slices cut from an ingot has become a viable alternative for some cavity types. In both cases the so-called damaged layer must be chemically etched or electrochemically polished away. The methods for doing this date back at least four decades, however, vigorous empirical studies on real cavities and more fundamental studies on niobium samples at laboratories worldwide have led to seemingly modest improvements that, when taken together, constitute a substantial advance in the reproducibility for surface processing techniques and overall cavity performance. This article reviews the development of niobium cavity surface processing, and summarizes results of recent studies. We place some emphasis on practical details for real cavity processing systems which are difficult to find in the literature but are, nonetheless, crucial for achieving the good and reproducible cavity performance. New approaches for bulk niobium surface treatment which aim to reduce cost or increase performance, including alternate chemical recipes, barrel polishing and ‘nitrogen doping’ of the RF surface, continue to be pursued and are closely linked to the requirements for surface processing.

Surface processing for bulk niobium superconducting radio frequency cavities

DOE PAGES

Kelly, M. P.; Reid, T.

2017-02-21

The majority of niobium cavities for superconducting particle accelerators continue to be fabricated from thin-walled (2-4mm) polycrystalline niobium sheet and, as a final step, require material removal from the radio frequency (RF) surface in order to achieve performance needed for use as practical accelerator devices. More recently bulk niobium in the form of, single-or large-grain slices cut from an ingot has become a viable alternative for some cavity types. In both cases the so-called damaged layer must be chemically etched or electrochemically polished away. The methods for doing this date back at least four decades, however, vigorous empirical studies onmore » real cavities and more fundamental studies on niobium samples at laboratories worldwide have led to seemingly modest improvements that, when taken together, constitute a substantial advance in the reproducibility for surface processing techniques and overall cavity performance. This article reviews the development of niobium cavity surface processing, and summarizes results of recent studies. We place some emphasis on practical details for real cavity processing systems which are difficult to find in the literature but are, nonetheless, crucial for achieving the good and reproducible cavity performance. New approaches for bulk niobium surface treatment which aim to reduce cost or increase performance, including alternate chemical recipes, barrel polishing and 'nitrogen doping' of the RF surface, continue to be pursued and are closely linked to the requirements for surface processing.« less

Review of ingot niobium as a material for superconducting radiofrequency accelerating cavities

NASA Astrophysics Data System (ADS)

Kneisel, P.; Ciovati, G.; Dhakal, P.; Saito, K.; Singer, W.; Singer, X.; Myneni, G. R.

2015-02-01

As a result of collaboration between Jefferson Lab and niobium manufacturer Companhia Brasileira de Metalurgia e Mineração (CBMM), ingot niobium was explored as a possible material for superconducting radiofrequency (SRF) cavity fabrication. The first single cell cavity from large-grain high purity niobium was fabricated and successfully tested at Jefferson Lab in 2004. This work triggered research activities in other SRF laboratories around the world. Large-grain (LG) niobium became not only an interesting alternative material for cavity builders, but also material scientists and surface scientists were eager to participate in the development of this technology. Many single cell cavities made from material of different suppliers have been tested successfully and several multi-cell cavities have shown performances comparable to the best cavities made from standard fine-grain niobium. Several 9-cell cavities fabricated by Research Instruments and tested at DESY exceeded the best performing fine grain cavities with a record accelerating gradient of Eacc=45.6 MV/m. The quality factor of those cavities was also higher than that of fine-grain (FG) cavities processed with the same methods. Such performance levels push the state-of-the art of SRF technology and are of great interest for future accelerators. This contribution reviews the development of ingot niobium technology and highlights some of the differences compared to standard FG material and opportunities for further developments.

Surface processing for bulk niobium superconducting radio frequency cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kelly, M. P.; Reid, T.

The majority of niobium cavities for superconducting particle accelerators continue to be fabricated from thin-walled (2-4mm) polycrystalline niobium sheet and, as a final step, require material removal from the radio frequency (RF) surface in order to achieve performance needed for use as practical accelerator devices. More recently bulk niobium in the form of, single-or large-grain slices cut from an ingot has become a viable alternative for some cavity types. In both cases the so-called damaged layer must be chemically etched or electrochemically polished away. The methods for doing this date back at least four decades, however, vigorous empirical studies onmore » real cavities and more fundamental studies on niobium samples at laboratories worldwide have led to seemingly modest improvements that, when taken together, constitute a substantial advance in the reproducibility for surface processing techniques and overall cavity performance. This article reviews the development of niobium cavity surface processing, and summarizes results of recent studies. We place some emphasis on practical details for real cavity processing systems which are difficult to find in the literature but are, nonetheless, crucial for achieving the good and reproducible cavity performance. New approaches for bulk niobium surface treatment which aim to reduce cost or increase performance, including alternate chemical recipes, barrel polishing and 'nitrogen doping' of the RF surface, continue to be pursued and are closely linked to the requirements for surface processing.« less

Review of ingot niobium as a material for superconducting radiofrequency accelerating cavities

DOE PAGES

Kneisel, P.; Ciovati, G.; Dhakal, P.; ...

2014-12-01

As a result of collaboration between Jefferson Lab and niobium manufacturer Companhia Brasileira de Metalurgia e Mineração (CBMM), ingot niobium was explored as a possible material for superconducting radiofrequency (SRF) cavity fabrication. The first single cell cavity from large-grain high purity niobium was fabricated and successfully tested at Jefferson Lab in 2004. This work triggered research activities in other SRF laboratories around the world. The large-grain (LG) niobium became not only an interesting alternative material for cavity builders, but also material scientists and surface scientists were eager to participate in the development of this technology. Many single cell cavities mademore » from material of different suppliers have been tested successfully and several multi-cell cavities have shown performances comparable to the best cavities made from standard fine-grain niobium. Several 9-cell cavities fabricated by Research Instruments and tested at DESY exceeded the best performing fine grain cavities with a record accelerating gradient of E acc=45.6 MV/m. The quality factor of those cavities was also higher than that of fine-grain (FG) cavities processed with the same methods. Such performance levels push the state-of-the art of SRF technology and are of great interest for future accelerators. This contribution reviews the development of ingot niobium technology and highlights some of the differences compared to standard FG material and opportunities for further developments.« less

Moissanite (SiC) with metal-silicide and silicon inclusions from tuff of Israel: Raman spectroscopy and electron microscope studies

NASA Astrophysics Data System (ADS)

Dobrzhinetskaya, Larissa; Mukhin, Pavel; Wang, Qin; Wirth, Richard; O'Bannon, Earl; Zhao, Wenxia; Eppelbaum, Lev; Sokhonchuk, Tatiana

2018-06-01

Here, we present studies of natural SiC that occurs in situ in tuff related to the Miocene alkaline basalt formation deposited in northern part of Israel. Raman spectroscopy, SEM and FIB-assisted TEM studies revealed that SiC is primarily hexagonal polytypes 4H-SiC and 6H-SiC, and that the 4H-SiC polytype is the predominant phase. Both SiC polytypes contain crystalline inclusions of silicon (Sio) and inclusions of metal-silicide with varying compositions (e.g. Si58V25Ti12Cr3Fe2, Si41Fe24Ti20Ni7V5Zr3, and Si43Fe40Ni17). The silicides crystal structure parameters match Si2TiV5 (Pm-3m space group, cubic), FeSi2Ti (Pbam space group, orthorhombic), and FeSi2 (Cmca space group, orthorhombic) respectively. We hypothesize that SiC was formed in a local ultra-reduced environment at respectively shallow depths (60-100 km), through a reaction of SiO2 with highly reducing fluids (H2O-CH4-H2-C2H6) arisen from the mantle "hot spot" and passing through alkaline basalt magma reservoir. SiO2 interacting with the fluids may originate from the walls of the crustal rocks surrounding this magmatic reservoir. This process led to the formation of SiC and accompanied by the reducing of metal-oxides to native metals, alloys, and silicides. The latter were trapped by SiC during its growth. Hence, interplate "hot spot" alkali basalt volcanism can now be included as a geological environment where SiC, silicon, and silicides can be found.

Combined effect of Pt and W alloying elements on Ni-silicide formation

NASA Astrophysics Data System (ADS)

Luo, T.; Mangelinck, D.; Descoins, M.; Bertoglio, M.; Mouaici, N.; Hallén, A.; Girardeaux, C.

2018-03-01

A combinatorial study of the combined effect of Pt and W on Ni silicide formation is performed. Ni(Pt, W) films with thickness and composition gradients were prepared by a co-deposition composition spread technique using sputtering deposition from Pt, W, and Ni targets. The deposited Ni(Pt,W) films were characterized by X-ray diffraction, X-ray reflectivity, Rutherford backscattering, and atom probe tomography. The maximum content of alloying elements is close to 27 at. %. Simulations of the thickness and composition were carried out and compared with experimental results. In situ X-ray diffraction and atom probe tomography were used to study the phase formation. Both additive alloying elements (Pt + W) slow down the Ni consumption and the effect of W is more pronounced than the one of Pt. Regarding the effect of alloying elements on Ni silicides formation, three regions could be distinguished in the Ni(Pt,W)/Si wafer. For the region close to the Ni target, the low contents of alloying elements (Pt + W) have little impact on the phase sequence (δ-Ni2Si is the first silicide and NiSi forms when Ni is entirely consumed) but the kinetics of silicide formation slows down. The region close to the Pt target has high contents of (Pt + W) and is rich in Pt and a simultaneous phase formation of δ-Ni2Si and NiSi is observed. For the high (Pt + W) contents and W-rich region, NiSi forms unexpectedly before δ-Ni2Si and the subsequent growth of δ-Ni2Si is accompanied by the NiSi consumption. When Ni is entirely consumed, NiSi regrows at the expense of δ-Ni2Si.

Density Functional Theory Study of Leaching Performance of Different Acids on Pyrochlore (100) Surface

NASA Astrophysics Data System (ADS)

Yang, Xiuli; Fang, Qing; Ouyang, Hui

2018-04-01

Pyrochlore leaching using hydrofluoric, sulfuric, and hydrochloric acids has been studied via experimental methods for years, but the interactions between niobium atoms on the pyrochlore surface and different acids have not been investigated. In this work, first-principles calculations based on density functional theory were used to elucidate the leaching performance of these three acids from the viewpoint of geometrical and electronic structures. The calculation results indicate that sulfate, chloride, and fluoride anions influence the geometric structure of pyrochlore (100) to different extents, decreasing in the order: sulfate, fluoride, chloride. Orbitals of O1 and O2 atoms of sulfate hybridized with those of surface niobium atom. Fluorine orbitals hybridized with those of surface niobium atoms. However, no obvious overlap exists between any orbitals of chlorine and surface niobium, revealing that chlorine does not interact chemically with surface niobium atoms.

Reclamation of niobium compounds from ionic liquid electrochemical polishing of superconducting radio frequency cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wixtrom, Alex I.; Buhler, Jessica E.; Reece, Charles E.

2013-06-01

Recent research has shown that choline chloride (vitamin B4)-based solutions can be used as a greener alternative to acid-based electrochemical polishing solutions. This study demonstrated a successful method for electrochemical deposition of niobium compounds onto the surface of copper substrates using a novel choline chloride-based ionic liquid. Niobium ions present in the ionic liquid solution were dissolved into the solution prior to deposition via electrochemical polishing of solid niobium. A black coating was clearly visible on the surface of the Cu following deposition. This coating was analyzed using scanning electron microscopy (SEM), electron dispersive X-ray spectroscopy (EDX), atomic force microscopymore » (AFM), and X-ray fluorescence spectroscopy (XRF). This ionic liquid-based electrochemical deposition method effectively recycles previously dissolved niobium from electrochemical polishing of superconducting radio frequency (SRF) cavities.« less

Efficacy of Tantalum Tungsten Alloys for Diffusion Barrier Applications

NASA Astrophysics Data System (ADS)

Smathers, D. B.; Aimone, P. R.

2017-12-01

Traditionally either Niobium, Tantalum or a combination of both have been used as diffusion barriers in Nb3Sn Multi-filament wire. Vanadium has also been used successfully but the ultimate RRR of the copper is limited unless an external shell of Niobium is included. Niobium is preferred over Tantalum when alternating current losses are not an issue as the Niobium will react to form Nb3Sn. Pure Tantalum tends to deform irregularly requiring extra starting thickness to ensure good barrier qualities. Our evaluations showed Tantalum lightly alloyed with 3 wt% Tungsten is compatible with the wire drawing process while deforming as well as or better than pure Niobium. Ta3wt%W has been processed as a single barrier and as a distributed barrier to fine dimensions. In addition, the higher modulus and strength of the Tantalum Tungsten alloy improves the overall tensile properties of the wire.

Density Functional Theory Study of Leaching Performance of Different Acids on Pyrochlore (100) Surface

NASA Astrophysics Data System (ADS)

Yang, Xiuli; Fang, Qing; Ouyang, Hui

2018-06-01

Pyrochlore leaching using hydrofluoric, sulfuric, and hydrochloric acids has been studied via experimental methods for years, but the interactions between niobium atoms on the pyrochlore surface and different acids have not been investigated. In this work, first-principles calculations based on density functional theory were used to elucidate the leaching performance of these three acids from the viewpoint of geometrical and electronic structures. The calculation results indicate that sulfate, chloride, and fluoride anions influence the geometric structure of pyrochlore (100) to different extents, decreasing in the order: sulfate, fluoride, chloride. Orbitals of O1 and O2 atoms of sulfate hybridized with those of surface niobium atom. Fluorine orbitals hybridized with those of surface niobium atoms. However, no obvious overlap exists between any orbitals of chlorine and surface niobium, revealing that chlorine does not interact chemically with surface niobium atoms.

Growth of single-crystalline cobalt silicide nanowires and their field emission property.

PubMed

Lu, Chi-Ming; Hsu, Han-Fu; Lu, Kuo-Chang

2013-07-03

In this work, cobalt silicide nanowires were synthesized by chemical vapor deposition processes on Si (100) substrates with anhydrous cobalt chloride (CoCl2) as precursors. Processing parameters, including the temperature of Si (100) substrates, the gas flow rate, and the pressure of reactions were varied and studied; additionally, the physical properties of the cobalt silicide nanowires were measured. It was found that single-crystal CoSi nanowires were grown at 850°C ~ 880°C and at a lower gas flow rate, while single-crystal Co2Si nanowires were grown at 880°C ~ 900°C. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with field emission measurements demonstrates that CoSi nanowires are attractive choices for future applications in field emitters.

Contacts to Semiconductor Nanowires

DTIC Science & Technology

2009-10-03

SiNW diameters and the amount of metal deposited, or alternatively, the atomic ratio between Pt and Si. The uniformity of the silicided NWs was...program. The Schottky contact is a metal silicide formed by rapid thermal annealing of the deposited contact metal . The θ- Ni2Si/n-Si NW Schottky...decision. unless so designated by other documentation. 14. ABSTRACT Metal contacts to semiconductor nanowires share similarities with their thin-film

SeaFrame: Building an Affordable Future Fleet. Volume 6, Issue 1, 2010

DTIC Science & Technology

2010-01-01

metal alloy combinations, but are up against a long design cycle in getting to know how the complex interplay between new...the heat treatment process. Magnesium silicide nanoparticles come out during heat treatment to strengthen the alloy, and engineers found it...already had valid data we could work with.” To help accurately model the magnesium silicide particles, called a precipitate, in the AA6082

Oxidation Resistance of Alloys from Nb-Si-Cr System for High Temperature Applications

DTIC Science & Technology

2013-01-02

higher education for undergraduate students while prepare the graduate students for professional careers in research (at one of the ONR facilities...generate interest in students to pursue higher education for undergraduate students while prepare the graduate students for professional careers in...reduces the amount of primary a significantly but still contains a rather coarser eutectic like microconstituent. A NbßSi (3-1 silicide ) silicide phase

Copper-Silicon Bronzes

DTIC Science & Technology

1933-05-11

copper alloys which have good static properties are disa:cinting in their endurance properties. The silicide allo~rs that are given high tensile strength...works satisfactorily, but the best welds 4 have been obtained by using a flux cdmposed of 905 fused borax and i0. sodium fluoride., The flux is...properties re- main almost the same. Grain size increases with sil- icon. III A study of hardening copper by heat treating its alloys with silicides

Plasma-Enhanced Deposition and Processing of Transition Metals and Transition Metal Silicides for VLSI.

DTIC Science & Technology

1986-05-20

molybdenum trifluoride in the deposited material. Titanium silicide films formed from a discharge of titanium tetrachlotide, silane, and hydrogen...displayed resistivities of -150 /4-cm, due to small amounts of oxygen and chlorine incorporated during deposition. Plasma etching studies of tungsten films...material, thereby reducing speed, and aluminum is a low melting material, thereby limiting processing latitude. As a result, mmition metals and

Long-Wavelength Infrared Surface Plasmons on Ga-Doped ZnO Films Excited via 2D Hole Arrays for Extraordinary Optical Transmission (Preprint)

DTIC Science & Technology

2013-10-01

Express 1, 1090-1099 (2011). [16] Soref, R., Peale, R. E., and Buchwald, W., “Longwave plasmonics on doped silicon and silicides ,” Opt. Express 16, 6507...Soref, R., Drehman, A., and Buchwald, W.R., “IR permittivities for silicides and doped silicon,” J. Opt. Soc. Am. B 27, 730-734 (2010). [19] Ginn

Electrical and optical properties of sub-10 nm nickel silicide films for silicon solar cells

NASA Astrophysics Data System (ADS)

Brahmi, Hatem; Ravipati, Srikanth; Yarali, Milad; Shervin, Shahab; Wang, Weijie; Ryou, Jae-Hyun; Mavrokefalos, Anastassios

2017-01-01

Highly conductive and transparent films of ultra-thin p-type nickel silicide films have been prepared by RF magnetron sputtering of nickel on silicon substrates followed by rapid thermal annealing in an inert environment in the temperature range 400-600 °C. The films are uniform throughout the wafer with thicknesses in the range of 3-6 nm. The electrical and optical properties are presented for nickel silicide films with varying thickness. The Drude-Lorentz model and Fresnel equations were used to calculate the dielectric properties, sheet resistance, absorption and transmission of the films. These ultrathin nickel silicide films have excellent optoelectronic properties for p-type contacts with optical transparencies up to 80% and sheet resistance as low as ~0.15 µΩ cm. Furthermore, it was shown that the use of a simple anti-reflection (AR) coating can recover most of the reflected light approaching the values of a standard Si solar cell with the same AR coating. Overall, the combination of ultra-low thickness, high transmittance, low sheet resistance and ability to recover the reflected light by utilizing standard AR coating makes them ideal for utilization in silicon based photovoltaic technologies as a p-type transparent conductor.

Low-Temperature Wet Conformal Nickel Silicide Deposition for Transistor Technology through an Organometallic Approach.

PubMed

Lin, Tsung-Han; Margossian, Tigran; De Marchi, Michele; Thammasack, Maxime; Zemlyanov, Dmitry; Kumar, Sudhir; Jagielski, Jakub; Zheng, Li-Qing; Shih, Chih-Jen; Zenobi, Renato; De Micheli, Giovanni; Baudouin, David; Gaillardon, Pierre-Emmanuel; Copéret, Christophe

2017-02-08

The race for performance of integrated circuits is nowadays facing a downscale limitation. To overpass this nanoscale limit, modern transistors with complex geometries have flourished, allowing higher performance and energy efficiency. Accompanying this breakthrough, challenges toward high-performance devices have emerged on each significant step, such as the inhomogeneous coverage issue and thermal-induced short circuit issue of metal silicide formation. In this respect, we developed a two-step organometallic approach for nickel silicide formation under near-ambient temperature. Transmission electron and atomic force microscopy show the formation of a homogeneous and conformal layer of NiSi x on pristine silicon surface. Post-treatment decreases the carbon content to a level similar to what is found for the original wafer (∼6%). X-ray photoelectron spectroscopy also reveals an increasing ratio of Si content in the layer after annealing, which is shown to be NiSi 2 according to X-ray absorption spectroscopy investigation on a Si nanoparticle model. I-V characteristic fitting reveals that this NiSi 2 layer exhibits a competitive Schottky barrier height of 0.41 eV and series resistance of 8.5 Ω, thus opening an alternative low-temperature route for metal silicide formation on advanced devices.

Contribution of precipitate on migrated grain boundaries to ductility-dip cracking in Alloy 625 weld joints

NASA Astrophysics Data System (ADS)

Lee, Dong Jin; Kim, Youn Soo; Shin, Yong Taek; Jeon, Eon Chan; Lee, Sang Hwa; Lee, Hyo-Jong; Lee, Sung Keun; Lee, Jun Hee; Lee, Hae Woo

2010-10-01

We investigated the crack properties in Alloy 625 weld metals and their characteristics using experimentally designed filler wires fabricated by varying the niobium and manganese contents in the flux with the shield metal arc welding (SMAW) process. The fast diffusivity of niobium on the migrated grain boundary (MGB) under strong restraint tensile stress, which was induced by the hardened matrix in weld metal containing high niobium and manganese, accelerated the growth of niobium carbide (NbC) in multipass deposits. Coalescence of microvoids along with incoherent NbC and further propagation induced ductility-dip cracking (DDC) on MGB.

Niobium and tantalum

USGS Publications Warehouse

Schulz, Klaus J.; Piatak, Nadine M.; Papp, John F.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

2017-12-19

Niobium and tantalum are transition metals that are almost always found together in nature because they have very similar physical and chemical properties. Their properties of hardness, conductivity, and resistance to corrosion largely determine their primary uses today. The leading use of niobium (about 75 percent) is in the production of high-strength steel alloys used in pipelines, transportation infrastructure, and structural applications. Electronic capacitors are the leading use of tantalum for high-end applications, including cell phones, computer hard drives, and such implantable medical devices as pacemakers. Niobium and tantalum are considered critical and strategic metals based on the potential risks to their supply (because current production is restricted to only a few countries) and the significant effects that a restriction in supply would have on the defense, energy, high-tech industrial, and medical sectors.The average abundance of niobium and tantalum in bulk continental crust is relatively low—8.0 parts per million (ppm) niobium and 0.7 ppm tantalum. Their chemical characteristics, such as small ionic size and high electronic field strength, significantly reduce the potential for these elements to substitute for more common elements in rock-forming minerals and make niobium and tantalum essentially immobile in most aqueous solutions. Niobium and tantalum do not occur naturally as pure metals but are concentrated in a variety of relatively rare oxide and hydroxide minerals, as well as in a few rare silicate minerals. Niobium is primarily derived from the complex oxide minerals of the pyrochlore group ((Na,Ca,Ce)2(Nb,Ti,Ta)2(O,OH,F)7), which are found in some alkaline granite-syenite complexes (that is, igneous rocks containing sodium- or potassium-rich minerals and little or no quartz) and carbonatites (that is, igneous rocks that are more than 50 percent composed of primary carbonate minerals, by volume). Tantalum is derived mostly from the mineral tantalite ((Fe,Mn)(Ta,Nb)2O6), which is found as an accessory mineral in rare-metal granites and pegmatites that are also enriched in lithium and cesium (termed lithium-cesium-tantalum (LCT)-type pegmatites).Brazil and Canada are the leading nations that produce niobium mineral concentrates, but Brazil is by far the leading producer, accounting for about 90 percent of production, which comes mostly from weathered material derived from carbonatites. Brazil and Canada also have the largest identified niobium resources; additional resources, although they are less well reported, occur in Angola, Australia, China, Greenland, Malawi, Russia, and South Africa. Australia and Brazil have been the leading producers of tantalum mineral concentrates, although recently Ethiopia and Mozambique have also been significant suppliers of tantalum. Artisanal mining of columbite-tantalite (also called coltan) is practiced in many countries, particularly Burundi, the Democratic Republic of the Congo (Congo [Kinshasa]), Nigeria, Rwanda, and Uganda. Brazil has about 40 percent of the identified tantalum resources; other countries and regions with identified tantalum resources include, in decreasing order of resources, Australia, Asia, Russia and the Middle East, Africa, North America, and Europe. Identified niobium and tantalum resources in the United States are small, low grade, and difficult to recover and process, and are thus not commercially recoverable at current prices. Consequently, the United States meets its current and expected future needs for niobium and tantalum through imports of primary mineral concentrates and alloys and through recovery from foreign and domestic alloy scrap that contain the metals.Environmentally, the main issues related to niobium and tantalum mining are land disruptions, the volume of waste materials and their disposal, and the radioactivity of some tailings and waste materials that contain thorium and uranium. Because of the relative biological inertness of niobium and tantalum, human and ecological health concerns are generally minimal under most natural conditions.Demand for both niobium and tantalum is expected to increase as the world economy continues to recover from the downturn that began in 2008. Increased demand for niobium is linked to increased consumption of microalloyed steel, which is used in the manufacture of cars, buildings, ships, and refinery equipment. Demand for these steels will likely increase with continued economic development in such countries as Brazil, China, and India. In addition, increased global demand for cars, cell phones, computers, superconducting magnets, and other high-tech devices will likely spur increased demand for both niobium and tantalum. The estimated global reserves and resources of niobium and tantalum are large and appear more than sufficient to meet global demand for the foreseeable future, possibly the next 500 years. The sale of “conflict coltan” attributed to rebel forces waging a civil war in Congo (Kinshasa) has been of recent concern and has highlighted the need for a transparent and traceable global supply chain that can exclude illegal columbite-tantalite from the conventional market while discerning legitimate artisanal mine production in central Africa.

Development and fabrication of improved Schottky power diodes, phases I and II

NASA Technical Reports Server (NTRS)

Cordes, L. F.; Garfinkle, M.; Taft, E. A.

1974-01-01

Reproducible methods for the fabrication of silicon Schottky diodes were developed for the metals tungsten, aluminum, conventional platinum silicide and low temperature platinum silicide. Barrier heights and barrier lowering were measured permitting the accurate prediction of ideal forward and reverse diode performance. Processing procedures were developed which permit the fabrication of large area (approximately 1 sqcm) mesa-geometry power Schottky diodes with forward and reverse characteristics that approach theoretical values.

Single-Crystal Material on Non-Single-Crystalline Substrate

DTIC Science & Technology

1999-02-01

point frit or solder glass can be deposited on a surface and bonded to a second surface using pressure and temperature. A sodium silicate material...interface. A metal or silicide at the bonding interface may be advantageous fQr electrical current conduction across the interface. 10 Applications...substrate, or a silicide or metal to aid bonding and vertical electrical current conduction. In some cases, it is difficult to polish the non- single

Band-to-Band Tunnel Transistor Design and Modeling for Low Power Applications

DTIC Science & Technology

2012-05-10

suggestions for reducing this burden, to Washington Headquarters Services , Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway...Fabrication 4.3 Analysis of the Silicided Source TFET 4.4 Subthreshold Swing Data Quality Analysis 4.5 Selective Silicide Using Germanium 4.6... International Electron Devices Meeting (IEDM) Short Course, 2007 [1.3] W. Y. Choi, B.-K. Park, J. D. Lee, and T.-J. King Liu, “Tunneling Field-Effect

Effect of Saturation Pressure Difference on Metal–Silicide Nanopowder Formation in Thermal Plasma Fabrication

PubMed Central

Shigeta, Masaya; Watanabe, Takayuki

2016-01-01

A computational investigation using a unique model and a solution algorithm was conducted, changing only the saturation pressure of one material artificially during nanopowder formation in thermal plasma fabrication, to highlight the effects of the saturation pressure difference between a metal and silicon. The model can not only express any profile of particle size–composition distribution for a metal–silicide nanopowder even with widely ranging sizes from sub-nanometers to a few hundred nanometers, but it can also simulate the entire growth process involving binary homogeneous nucleation, binary heterogeneous co-condensation, and coagulation among nanoparticles with different compositions. Greater differences in saturation pressures cause a greater time lag for co-condensation of two material vapors during the collective growth of the metal–silicide nanopowder. The greater time lag for co-condensation results in a wider range of composition of the mature nanopowder. PMID:28344300

In-pile test results of U-silicide or U-nitride coated U-7Mo particle dispersion fuel in Al

NASA Astrophysics Data System (ADS)

Kim, Yeon Soo; Park, J. M.; Lee, K. H.; Yoo, B. O.; Ryu, H. J.; Ye, B.

2014-11-01

U-silicide or U-nitride coated U-Mo particle dispersion fuel in Al (U-Mo/Al) was in-pile tested to examine the effectiveness of the coating as a diffusion barrier between the U-7Mo fuel kernels and Al matrix. This paper reports the PIE data and analyses focusing on the effectiveness of the coating in terms of interaction layer (IL) growth and general fuel performance. The U-silicide coating showed considerable success, but it also provided evidence for additional improvement for coating process. The U-nitride coated specimen showed largely inefficient results in reducing IL growth. From the test, important observations were also made that can be utilized to improve U-Mo/Al fuel performance. The heating process for coating turned out to be beneficial to suppress fuel swelling. The use of larger fuel particles confirmed favorable effects on fuel performance.

Vertically grown multiwalled carbon nanotube anode and nickel silicide integrated high performance microsized (1.25 μL) microbial fuel cell.

PubMed

Mink, Justine E; Rojas, Jhonathan P; Logan, Bruce E; Hussain, Muhammad M

2012-02-08

Microbial fuel cells (MFCs) are an environmentally friendly method for water purification and self-sustained electricity generation using microorganisms. Microsized MFCs can also be a useful power source for lab-on-a-chip and similar integrated devices. We fabricated a 1.25 μL microsized MFC containing an anode of vertically aligned, forest type multiwalled carbon nanotubes (MWCNTs) with a nickel silicide (NiSi) contact area that produced 197 mA/m(2) of current density and 392 mW/m(3) of power density. The MWCNTs increased the anode surface-to-volume ratio, which improved the ability of the microorganisms to couple and transfer electrons to the anode. The use of nickel silicide also helped to boost the output current by providing a low resistance contact area to more efficiently shuttle electrons from the anode out of the device. © 2012 American Chemical Society

On the diffraction pattern of bundled rare-earth silicide nanowires on Si(0 0 1).

PubMed

Timmer, F; Bahlmann, J; Wollschläger, J

2017-11-01

Motivated by the complex diffraction pattern observed for bundled rare-earth silicide nanowires on the Si(0 0 1) surface, we investigate the influence of the width and the spacing distribution of the nanowires on the diffraction pattern. The diffraction pattern of the bundled rare-earth silicide nanowires is analyzed by the binary surface technique applying a kinematic approach to diffraction. Assuming a categorical distribution for the (individual) nanowire size and a Poisson distribution for the size of the spacing between adjacent nanowire-bundles, we are able to determine the parameters of these distributions and derive an expression for the distribution of the nanowire-bundle size. Additionally, the comparison of our simulations to the experimental diffraction pattern reveal that a (1  ×  1)-periodicity on top of the nanowires has to be assumed for a good match.

Development of a fused slurry silicide coating for the protection of tantalum alloys

NASA Technical Reports Server (NTRS)

Packer, C. M.; Perkins, R. A.

1974-01-01

Results are reported of a research program to develop a reliable high-performance, fused slurry silicide protective coating for a tantalum-10 tungsten alloy for use at 1427 to 1538 C at 0.1 to 10 torr air pressure under cyclic temperature conditions. A review of silicide coating performance under these conditions indicated that the primary wear-out mode is associated with widening of hairline fissures in the coating. Consideration has been given to modifying the oxidation products that form on the coating surface to provide a seal for these fissures and to minimize their widening. On the basis of an analysis of the phase relationships between silica and various other oxides, a coating having the slurry composition 2.5Mn-33Ti-64.5Si was developed that is effective in the pressure range from 1 to 10 torr.

Versatile Titanium Silicide Monolayers with Prominent Ferromagnetic, Catalytic, and Superconducting Properties: Theoretical Prediction.

PubMed

Wu, Qisheng; Zhang, Jun-Jie; Hao, Peipei; Ji, Zhongyang; Dong, Shuai; Ling, Chongyi; Chen, Qian; Wang, Jinlan

2016-10-06

On the basis of global structure search and density functional theory calculations, we predict a new class of two-dimensional (2D) materials, titanium silicide (Ti 2 Si, TiSi 2 , and TiSi 4 ) monolayers. They are proved to be energetically, dynamically, and thermally stable and own excellent mechanical properties. Among them, Ti 2 Si is a ferromagnetic metal with a magnetic moment of 1.37 μ B /cell, while TiSi 2 is an ideal catalyst for the hydrogen evolution reaction with a nearly zero free energy of hydrogen adsorption. More importantly, electron-phonon coupling calculations suggest that TiSi 4 is a robust 2D phonon-mediated superconductor with a transition temperature of 5.8 K, and the transition temperature can be enhanced up to 11.7 K under a suitable external strain. The versatility makes titanium silicide monolayers promising candidates for spintronic materials, hydrogen evolution catalysts, and 2D superconductors.

Effect of Saturation Pressure Difference on Metal-Silicide Nanopowder Formation in Thermal Plasma Fabrication.

PubMed

Shigeta, Masaya; Watanabe, Takayuki

2016-03-07

A computational investigation using a unique model and a solution algorithm was conducted, changing only the saturation pressure of one material artificially during nanopowder formation in thermal plasma fabrication, to highlight the effects of the saturation pressure difference between a metal and silicon. The model can not only express any profile of particle size-composition distribution for a metal-silicide nanopowder even with widely ranging sizes from sub-nanometers to a few hundred nanometers, but it can also simulate the entire growth process involving binary homogeneous nucleation, binary heterogeneous co-condensation, and coagulation among nanoparticles with different compositions. Greater differences in saturation pressures cause a greater time lag for co-condensation of two material vapors during the collective growth of the metal-silicide nanopowder. The greater time lag for co-condensation results in a wider range of composition of the mature nanopowder.

Growth of single-crystalline cobalt silicide nanowires and their field emission property

PubMed Central

2013-01-01

In this work, cobalt silicide nanowires were synthesized by chemical vapor deposition processes on Si (100) substrates with anhydrous cobalt chloride (CoCl2) as precursors. Processing parameters, including the temperature of Si (100) substrates, the gas flow rate, and the pressure of reactions were varied and studied; additionally, the physical properties of the cobalt silicide nanowires were measured. It was found that single-crystal CoSi nanowires were grown at 850°C ~ 880°C and at a lower gas flow rate, while single-crystal Co2Si nanowires were grown at 880°C ~ 900°C. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with field emission measurements demonstrates that CoSi nanowires are attractive choices for future applications in field emitters. PMID:23819795

Study of optical and luminescence properties of silicon — semiconducting silicide — silicon multilayer nanostructures

NASA Astrophysics Data System (ADS)

Galkin, N. G.; Galkin, K. N.; Dotsenko, , S. A.; Goroshko, D. L.; Shevlyagin, A. V.; Chusovitin, E. A.; Chernev, I. M.

2017-01-01

By method of in situ differential spectroscopy it was established that at the formation of monolayer Fe, Cr, Ca, Mg silicide and Mg stannide islands on the atomically clean silicon surface an appearance of loss peaks characteristic for these materials in the energy range of 1.1-2.6 eV is observed. An optimization of growth processes permit to grow monolithic double nanoheterostructures (DNHS) with embedded Fe, Cr and Ca nanocrystals, and also polycrystalline DNHS with NC of Mg silicide and Mg stannide and Ca disilicide. By methods of optical spectroscopy and Raman spectroscopy it was shown that embedded NC form intensive peaks in the reflectance spectra at energies up to 2.5 eV and Raman peaks. In DNS with β-FeSi2 NC a photoluminescence and electroluminescence at room temperature were firstly observed.

A long-term ultrahigh temperature application of layered silicide coated Nb alloy in air

NASA Astrophysics Data System (ADS)

Sun, Jia; Fu, Qian-Gang; Li, Tao; Wang, Chen; Huo, Cai-Xia; Zhou, Hong; Yang, Guan-Jun; Sun, Le

2018-05-01

Nb-based alloy possessed limited application service life at ultrahigh temperature (>1400 °C) in air even taking the effective protective coating strategy into consideration for last decades. In this work a long duration of above 128 h at 1500 °C in air was successfully achieved on Nb-based alloy thanked to multi-layered silicide coating. Through optimizing interfaces, the MoSi2/NbSi2 silicide coating with Al2O3-adsorbed-particles layer exhibited three-times higher of oxidation resistance capacity than the one without it. In MoSi2-Al2O3-NbSi2 multilayer coating, the Al2O3-adsorbed-particles layer playing as an element-diffusion barrier role, as well as the formed porous Nb5Si3 layer as a stress transition zone, contributed to the significant improvement.

Precipitation of hydrides in high purity niobium after different treatments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Barkov, F.; Romanenko, A.; Trenikhina, Y.

Precipitation of lossy non-superconducting niobium hydrides represents a known problem for high purity niobium in superconducting applications. Using cryogenic optical and laser confocal scanning microscopy we have directly observed surface precipitation and evolution of niobium hydrides in samples after different treatments used for superconducting RF cavities for particle acceleration. Precipitation is shown to occur throughout the sample volume, and the growth of hydrides is well described by the fast diffusion-controlled process in which almost all hydrogen is precipitated atmore » $T=140$~K within $$\\sim30$$~min. 120$$^{\\circ}$$C baking and mechanical deformation are found to affect hydride precipitation through their influence on the number of nucleation and trapping centers.« less

Superconducting 500 MHz accelerating copper cavities sputter-coated with niobium films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benvenuti, C.; Circelli, N.; Hauer, M.

Thermal breakdown induced either by electron loading or by local defects of enhanced RF losses limits the accelerating field of superconducting niobium cavities. Replacing niobium with a material of higher thermal conductivity would be highly desirable to increase the maximum field. Therefore, cavities made of OFHC copper were coated by D.C. bias sputtering with a thin niobium film (1.5 to 5 ..mu..). Accelerating fields up to 8.6 MVm/sup -1/ were obtained without observing any field breakdown, the limitation being due to the available rf power. The Q values achieved at 4.2 K and low field were similar to those ofmore » niobium sheet cavities (i.e. about 2 x 10/sup 9/), but a fast initial decrease of Q to about 10/sup 9/ was reproducibly experienced. Subsequent inspection of regions of enhanced rf losses revealed defects the origin of which is under study. The apparatus used for coating the cavities and the results obtained are presented and discussed.« less

Studies of Niobium Thin Film Produced by Energetic Vacuum Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Genfa Wu; Anne-Marie Valente; H. Phillips

2004-05-01

An energetic vacuum deposition system has been used to study deposition energy effects on the properties of niobium thin films on copper and sapphire substrates. The absence of working gas avoids the gaseous inclusions commonly seen with sputtering deposition. A biased substrate holder controls the deposition energy. Transition temperature and residual resistivity ratio of the niobium thin films at several deposition energies are obtained together with surface morphology and crystal orientation measurements by AFM inspection, XRD and TEM analysis. The results show that niobium thin films on sapphire substrate exhibit the best cryogenic properties at deposition energy around 123 eV.more » The TEM analysis revealed that epitaxial growth of film was evident when deposition energy reaches 163 eV for sapphire substrate. Similarly, niobium thin film on copper substrate shows that film grows more oriented with higher deposition energy and grain size reaches the scale of the film thickness at the deposition energy around 153 eV.« less

Pure Niobium as a Pressure Vessel Material

NASA Astrophysics Data System (ADS)

Peterson, T. J.; Carter, H. F.; Foley, M. H.; Klebaner, A. L.; Nicol, T. H.; Page, T. M.; Theilacker, J. C.; Wands, R. H.; Wong-Squires, M. L.; Wu, G.

2010-04-01

Physics laboratories around the world are developing niobium superconducting radio frequency (SRF) cavities for use in particle accelerators. These SRF cavities are typically cooled to low temperatures by direct contact with a liquid helium bath, resulting in at least part of the helium container being made from pure niobium. In the U.S., the Code of Federal Regulations allows national laboratories to follow national consensus pressure vessel rules or use of alternative rules which provide a level of safety greater than or equal to that afforded by ASME Boiler and Pressure Vessel Code. Thus, while used for its superconducting properties, niobium ends up also being treated as a material for pressure vessels. This report summarizes what we have learned about the use of niobium as a pressure vessel material, with a focus on issues for compliance with pressure vessel codes. We present results of a literature search for mechanical properties and tests results, as well as a review of ASME pressure vessel code requirements and issues.

Niobium oxide nanocolumns formed via anodic alumina with modulated pore diameters

NASA Astrophysics Data System (ADS)

Pligovka, A.; Zakhlebayeva, A.; Lazavenka, A.

2018-03-01

Niobium oxide nanocolumns with modulated diameters were formed for the first time. An Al/Nb bilayer specimen was prepared by successive sputter-deposition of 300 nm niobium layer and 1200 nm aluminum layer onto silicon wafer. Regular anodic alumina matrix with modulated pore diameters was formed by sequential anodization of initial specimen in tartaric acid at 180 V, and in oxalic acid at 37 V. Further potentiodynamic reanodization of the specimen up to 400 V causes the simultaneous growth of 440 nm continuous niobium oxide layer beneath the alumina film and two types of an array of oxide nanocolumns (thick – with 100 nm width and 630 nm high and thin – with 25 nm width and 170 nm high), which are the filling of the alumina pores. The morphology of the formed anodic niobium oxide nanocolumns with modulated diameters was determined by field emission scanning electron microscopy. The formed nanostructures can be used for perspective devices of nano- and optoelectronics such as photonic crystals.

Characterization of high-purity niobium structures fabricated using the electron beam melting process

NASA Astrophysics Data System (ADS)

Terrazas Najera, Cesar Adrian

Additive Manufacturing (AM) refers to the varied set of technologies utilized for the fabrication of complex 3D components from digital data in a layer-by-layer fashion. The use of these technologies promises to revolutionize the manufacturing industry. The electron beam melting (EBM) process has been utilized for the fabrication of fully dense near-net-shape components from various metallic materials. This process, catalogued as a powder bed fusion technology, consists of the deposition of thin layers (50 - 120microm) of metallic powder particles which are fused by the use of a high energy electron beam and has been commercialized by Swedish company Arcam AB. Superconducting radio frequency (SRF) cavities are key components that are used in linear accelerators and other light sources for studies of elemental physics. Currently, cavity fabrication is done by employing different forming processes including deep-drawing and spinning. In both of the latter techniques, a feedstock high-purity niobium sheet with a thickness ranging from 3-4 mm is mechanically deformed and shaped into the desired geometry. In this manner, half cavities are formed that are later joined by electron beam welding (EBW). The welding step causes variability in the shape of the cavity and can also introduce impurities at the surface of the weld interface. The processing route and the purity of niobium are also of utmost importance since the presence of impurities such as inclusions or defects can be detrimental for the SRF properties of cavities. The focus of this research was the use of the EBM process in the manufacture of high purity niobium parts with potential SRF applications. Reactor grade niobium was plasma atomized and used as the precursor material for fabrication using EBM. An Arcam A2 system was utilized for the fabrication. The system had all internal components of the fabrication chamber replaced and was cleaned to prevent contamination of niobium powder. A mini-vat, developed at the W.M. Keck Center for 3D Innovation was used for fabrication due to the limited amount of niobium powder available. Sifting of the material for reuse was done inside a glovebox conditioned to sustain a positive pressure using nitrogen gas and help in delaying moisture adsorption by the powder. The initial step in the research was the optimization of the fabrication parameters to obtain nearly fully dense (% Relative density > 99%) components followed by the fabrication of application-specific parts to be used for measuring mechanical and physical properties. Such parts, which included a probe or antenna measuring ˜85mm tall, were used in the characterization of the thermal conductivity and the residual resistivity ratio of the material; both properties are important in SRF applications. The purity of the material was monitored at different stages from the niobium stock, to the plasma atomized powder, and finally, in the EBM-fabricated parts. For the niobium stock, niobium powder, and in EBM-fabricated parts, chemical analysis was performed using ICP fusion and LECO combustion. A residual gas analyzer (RGA) was used to monitor the vacuum environment during EBM fabrication. X-ray diffraction (XRD) was also used to assess the purity of EBM-fabricated niobium. A second milestone was the characterization of the tensile properties of EBM-fabricated niobium for the first time. These properties included the average yield and ultimate tensile strengths that measured 140MPa and 255MPa respectively. Measurements of the percent elongation were done using visual feedback from a video camera. Similarly, a boundary detection algorithm was used to approximate the percent reduction in area, because only rectangular specimens were available for experimentation. The measured values averaged 34% elongation and 98% reduction in area. Microscopy was also employed to characterize the microstructure of the EBM niobium and SEM images of the fractured specimens utilized in a fractography analysis. The microstructure observed in the horizontal plane of reference was of nearly equiaxed grains with a measured size of roughly 250mum. In the vertical plane, the microstructure was of columnar grains that elongated parallel to the EBM build direction. The fractography images revealed the ductile nature of the material with the presence of micro-void coalescence in the fracture surface. The mechanical properties and microstructure of EBM-fabricated niobium were compared against those of reactor grade niobium. As will be detailed later, the reactor grade niobium had yield and ultimate tensile strengths of 135MPa and 205MPa respectively. The percent elongation was measured at 45.2% and the percent reduction in area at 97.2% for the reactor grade niobium.

Mineral Resource of the Month: Niobium

USGS Publications Warehouse

Papp, John F.

2014-01-01

Niobium, also called columbium, is a transition metal with a very high melting point. It is in greatest demand in industrialized countries, like the United States, because of its defense-related uses in the aerospace, energy and transportation industries. Niobium is used mostly to make high-strength, low-alloy (HSLA) steel and stainless steel. HSLA steels are used in large-diameter pipes for oil and natural gas pipelines and automobile wheels.

Thermal transport across metal silicide-silicon interfaces: An experimental comparison between epitaxial and nonepitaxial interfaces

NASA Astrophysics Data System (ADS)

Ye, Ning; Feser, Joseph P.; Sadasivam, Sridhar; Fisher, Timothy S.; Wang, Tianshi; Ni, Chaoying; Janotti, Anderson

2017-02-01

Silicides are used extensively in nano- and microdevices due to their low electrical resistivity, low contact resistance to silicon, and their process compatibility. In this work, the thermal interface conductance of TiSi2, CoSi2, NiSi, and PtSi are studied using time-domain thermoreflectance. Exploiting the fact that most silicides formed on Si(111) substrates grow epitaxially, while most silicides on Si(100) do not, we study the effect of epitaxy, and show that for a wide variety of interfaces there is no dependence of interface conductance on the detailed structure of the interface. In particular, there is no difference in the thermal interface conductance between epitaxial and nonepitaxial silicide/silicon interfaces, nor between epitaxial interfaces with different interface orientations. While these silicide-based interfaces yield the highest reported interface conductances of any known interface with silicon, none of the interfaces studied are found to operate close to the phonon radiation limit, indicating that phonon transmission coefficients are nonunity in all cases and yet remain insensitive to interfacial structure. In the case of CoSi2, a comparison is made with detailed computational models using (1) full-dispersion diffuse mismatch modeling (DMM) including the effect of near-interfacial strain, and (2) an atomistic Green' function (AGF) approach that integrates near-interface changes in the interatomic force constants obtained through density functional perturbation theory. Above 100 K, the AGF approach significantly underpredicts interface conductance suggesting that energy transport does not occur purely by coherent transmission of phonons, even for epitaxial interfaces. The full-dispersion DMM closely predicts the experimentally observed interface conductances for CoSi2, NiSi, and TiSi2 interfaces, while it remains an open question whether inelastic scattering, cross-interfacial electron-phonon coupling, or other mechanisms could also account for the high-temperature behavior. The effect of degenerate semiconductor dopant concentration on metal-semiconductor thermal interface conductance was also investigated with the result that we have found no dependencies of the thermal interface conductances up to (n or p type) ≈1 ×1019 cm-3, indicating that there is no significant direct electronic transport and no transport effects that depend on long-range metal-semiconductor band alignment.

On the Alloying and Properties of Tetragonal Nb5Si3 in Nb-Silicide Based Alloys

PubMed Central

Tsakiropoulos, Panos

2018-01-01

The alloying of Nb5Si3 modifies its properties. Actual compositions of (Nb,TM)5X3 silicides in developmental alloys, where X = Al + B + Ge + Si + Sn and TM is a transition and/or refractory metal, were used to calculate the composition weighted differences in electronegativity (Δχ) and an average valence electron concentration (VEC) and the solubility range of X to study the alloying and properties of the silicide. The calculations gave 4.11 < VEC < 4.45, 0.103 < Δχ < 0.415 and 33.6 < X < 41.6 at.%. In the silicide in Nb-24Ti-18Si-5Al-5Cr alloys with single addition of 5 at.% B, Ge, Hf, Mo, Sn and Ta, the solubility range of X decreased compared with the unalloyed Nb5Si3 or exceeded 40.5 at.% when B was with Hf or Mo or Sn and the Δχ decreased with increasing X. The Ge concentration increased with increasing Ti and the Hf concentration increased and decreased with increasing Ti or Nb respectively. The B and Sn concentrations respectively decreased and increased with increasing Ti and also depended on other additions in the silicide. The concentration of Sn was related to VEC and the concentrations of B and Ge were related to Δχ. The alloying of Nb5Si3 was demonstrated in Δχ versus VEC maps. Effects of alloying on the coefficient of thermal expansion (CTE) anisotropy, Young’s modulus, hardness and creep data were discussed. Compared with the hardness of binary Nb5Si3 (1360 HV), the hardness increased in silicides with Ge and dropped below 1360 HV when Al, B and Sn were present without Ge. The Al effect on hardness depended on other elements substituting Si. Sn reduced the hardness. Ti or Hf reduced the hardness more than Cr in Nb5Si3 without Ge. The (Nb,Hf)5(Si,Al)3 had the lowest hardness. VEC differentiated the effects of additions on the hardness of Nb5Si3 alloyed with Ge. Deterioration of the creep of alloyed Nb5Si3 was accompanied by decrease of VEC and increase or decrease of Δχ depending on alloying addition(s). PMID:29300327

The impact of Ti and temperature on the stability of Nb5Si3 phases: a first-principles study

PubMed Central

Papadimitriou, Ioannis; Utton, Claire; Tsakiropoulos, Panos

2017-01-01

Abstract Nb-silicide based alloys could be used at T > 1423 K in future aero-engines. Titanium is an important additive to these new alloys where it improves oxidation, fracture toughness and reduces density. The microstructures of the new alloys consist of an Nb solid solution, and silicides and other intermetallics can be present. Three Nb5Si3 polymorphs are known, namely αNb5Si3 (tI32 Cr5B3-type, D8l), βNb5Si3 (tI32 W5Si3-type, D8m) and γNb5Si3 (hP16 Mn5Si3-type, D88). In these 5–3 silicides Nb atoms can be substituted by Ti atoms. The type of stable Nb5Si3 depends on temperature and concentration of Ti addition and is important for the stability and properties of the alloys. The effect of increasing concentration of Ti on the transition temperature between the polymorphs has not been studied. In this work first-principles calculations were used to predict the stability and physical properties of the various Nb5Si3 silicides alloyed with Ti. Temperature-dependent enthalpies of formation were computed, and the transition temperature between the low (α) and high (β) temperature polymorphs of Nb5Si3 was found to decrease significantly with increasing Ti content. The γNb5Si3 was found to be stable only at high Ti concentrations, above approximately 50 at. % Ti. Calculation of physical properties and the Cauchy pressures, Pugh’s index of ductility and Poisson ratio showed that as the Ti content increased, the bulk moduli of all silicides decreased, while the shear and elastic moduli and the Debye temperature increased for the αNb5Si3 and γNb5Si3 and decreased for βNb5Si3. With the addition of Ti the αNb5Si3 and γNb5Si3 became less ductile, whereas the βNb5Si3 became more ductile. When Ti was added in the αNb5Si3 and βNb5Si3 the linear thermal expansion coefficients of the silicides decreased, but the anisotropy of coefficient of thermal expansion did not change significantly. PMID:28740563

New Possible Structure of Silicide Mg2Si under Pressure

NASA Astrophysics Data System (ADS)

Luniakov, Yu. V.

2018-05-01

As a result of an evolutionary search based on the density functional theory, a new low-symmetry structure of silicide Mg2Si under pressure was discovered. This structure can exist along with the known structures of the symmetry Pnma and P63/mmc and is stable at a pressure of about 20 GPa. The lattice parameters of the discovered structure are in better agreement with the experimental values than the lattice parameters of the known structures.

Biopropellant Engine Plume Contamination Program. Volume 1. Chamber Measurements. Phase 1

DTIC Science & Technology

1979-12-01

motor-actuated/linked bipropellant valve manufactured by Moog, Inc. The thrust chambers mechanically attached to the injector were silicide -coated...was NaCI ( sodium chloride); IR camera data were recorded from the side viewport of the lOY chamber. The flowfield viewed with the 8-deg fov lens...100, Contoured Six-Element Splash Plate (0 and 45 deg) 0.0167 (Pc = 150 psia) 100 to 300 100 to 300 0.0006 Silicide -Coated, Columbium Alloy

Symposium Q: Magnetic Thin Films, Heterostructures, and Device Materials

DTIC Science & Technology

2007-05-22

results in the formation of sodium carboxylate groups, that electronics, also known as magnetoelectronics or spintronics. Mn promoted the adsorption of...Q8.29 Magnetic Properties of Microcrystalline Si Thin films and Nickel Silicide Nanowires. Joondong Kim’, Seongjin Jang 2 , Bi-Ching Shih 2 , Hao...Buffalo, New York. The silicides , such as NiSi 2 and CoSi2 , have been attractive materials to crystallize Si and grow an epitaxial Si film with a small

Thermal Diagrams of Thermo-Electrical Devices (Selected Chapters)

DTIC Science & Technology

1974-10-09

for example silicides ) the electric-spark treatment is a long process; thus, this method is unsuitable for obtaining a large number of holes...converters for marine use were developed with useful electric power of 500- 2000 W. Sodium -potassium eutectic was used both for supplying the heat from...oxidizing mdiu•r. In view of this fact it is advisable at present to examine onlýy the silicides of certain metals that are stable under the ettnr, con

Neutronic study on conversion of SAFARI-1 to LEU silicide fuel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ball, G.; Pond, R.; Hanan, N.

1995-02-01

This paper marks the initial study into the technical and economic feasibility of converting the SAFARI-1 reactor in South Africa to LEU silicide fuel. Several MTR assembly geometries and LEU uranium densities have been studied and compared with MEU and HEU fuels. Two factors of primary importance for conversion of SAFARI-1 to LEU fuel are the economy of the fuel cycle and the performance of the incore and excore irradiation positions.

Fusion silicide coatings for tantalum alloys.

NASA Technical Reports Server (NTRS)

Warnock, R. V.; Stetson, A. R.

1972-01-01

Calculation of the performance of fusion silicide coatings under simulated atmospheric reentry conditions to a maximum temperature of 1810 K (2800 F). Both recently developed and commercially available coatings are included. Data are presented on oxidation rate with and without intentional defecting, the influence of the coatings on the ductile-brittle bend transition temperature, and the mechanical properties. Coatings appear capable of affording protection for at least 100 simulated cycles to 2600 F and 63 cycles to 2800 F.

Silicide Schottky Barrier For Back-Surface-Illuminated CCD

NASA Technical Reports Server (NTRS)

Hecht, Michael H.

1990-01-01

Quantum efficiency of back-surface-illuminated charge-coupled device (CCD) increased by coating back surface with thin layer of PtSi or IrSi on thin layer of SiO2. In its interaction with positively-doped bulk Si of CCD, silicide/oxide layer forms Schottky barrier that repels electrons, promoting accumulation of photogenerated charge carriers in front-side CCD potential wells. Physical principle responsible for improvement explained in "Metal Film Increases CCD Output" (NPO-16815).

Metallization of Large Silicon Wafers

NASA Technical Reports Server (NTRS)

Pryor, R. A.

1978-01-01

A metallization scheme was developed which allows selective plating of silicon solar cell surfaces. The system is comprised of three layers. Palladium, through the formation of palladium silicide at 300 C in nitrogen, makes ohmic contact to the silicon surface. Nickel, plated on top of the palladium silicide layer, forms a solderable interface. Lead-tin solder on the nickel provides conductivity and allows a convenient means for interconnection of cells. To apply this metallization, three chemical plating baths are employed.

Controlling the formation and stability of ultra-thin nickel silicides - An alloying strategy for preventing agglomeration

NASA Astrophysics Data System (ADS)

Geenen, F. A.; van Stiphout, K.; Nanakoudis, A.; Bals, S.; Vantomme, A.; Jordan-Sweet, J.; Lavoie, C.; Detavernier, C.

2018-02-01

The electrical contact of the source and drain regions in state-of-the-art CMOS transistors is nowadays facilitated through NiSi, which is often alloyed with Pt in order to avoid morphological agglomeration of the silicide film. However, the solid-state reaction between as-deposited Ni and the Si substrate exhibits a peculiar change for as-deposited Ni films thinner than a critical thickness of tc = 5 nm. Whereas thicker films form polycrystalline NiSi upon annealing above 450 ° C , thinner films form epitaxial NiSi2 films that exhibit a high resistance toward agglomeration. For industrial applications, it is therefore of utmost importance to assess the critical thickness with high certainty and find novel methodologies to either increase or decrease its value, depending on the aimed silicide formation. This paper investigates Ni films between 0 and 15 nm initial thickness by use of "thickness gradients," which provide semi-continuous information on silicide formation and stability as a function of as-deposited layer thickness. The alloying of these Ni layers with 10% Al, Co, Ge, Pd, or Pt renders a significant change in the phase sequence as a function of thickness and dependent on the alloying element. The addition of these ternary impurities therefore changes the critical thickness tc. The results are discussed in the framework of classical nucleation theory.

Mineral resource of the month: niobium (columbium)

USGS Publications Warehouse

Papp, John F.

2007-01-01

It’s not just diamonds associated with conflict in Africa. Coltan, short for columbite-tantalite (a blend of niobium — also called columbium — and tantalum minerals), is linked with the recent conflicts in the Congo that involved several African countries. The metallic ore, which is processed to separate out niobium and the very valuable tantalum (see Geotimes, August 2004), is believed to be smuggled out and sold to help finance the armed conflicts.

THE COLORIMETRIC DETERMINATION OF VANADIUM IN NIOBIUM-VANADIUM ALLOYS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Articolo, O.J.

1959-06-26

A procedure is described for the analysis of vanadium in niobium-- vanadium alloys in the range >0.1% vanadium with an accuracy of better than 3%. The method was applied to the analysis of niobium alloys in which the nominal per cent vanadium varied between 0.3 to 4.6%. The sample is dissolved in a mixture of nitric and hydrofluoric acid and then evaporated to fumes with sulfuric acid. The niobium is hydrolyzed with sulfurous acid and separated from the vanadium by filtration. Hydrogen peroxide is added to the filtrate to form a reddish brown complex with the vanadium. The optical densitymore » of the resulting solution is obtained at 450 m mu on a model B Beckman spectrophotometer. (auth)« less

Undercooling measurement in a low-gravity containerless environment

NASA Technical Reports Server (NTRS)

Robinson, M. B.

1981-01-01

A technique is described for measuring the amount of undercooling for samples processed in a low-gravity containerless environment. The time of undercooling is determined by measuring the time of cooling before nucleation and recalescence by two infrared detectors. Once the cooling curve for each drop is calculated, the amount of undercooling can then be found. The technique is demonstrated by measuring the amount of undercooling for drops of pure niobium and select compositions of the niobium-germanium alloy system while free falling in a 32 n evacuated drop tube. The total hemispherical emissivities and specific heats for these materials were measured using a high-temperature containerless calorimeter. An overview of the effect of undercooling on drops of niobium and niobium-germanium is given.

Processing of a Mullite Matrix, Molybdenum Disilicide Reinforced Composite

DTIC Science & Technology

1991-01-01

at high temperatures (best of the silicides and almost as good as SiC) is due to the formation of protective SiO2 layers on the surface of the MoSi 2...of the precipitation preparation process) consisted largely of sodium . Previous work 52 showed that the particle size was 160 A (TEM analysis) not...M.K. Brun, L.E. Szala, "Kinetics of Oxidation of Carbide and Silicide Dispersed Phases in Oxide Matrices," Adv. Ceram. Mat., 3 [5] 491-497 (1988). 5

Optical response at 10.6 microns in tungsten silicide Schottky barrier diodes

NASA Technical Reports Server (NTRS)

Kumar, Sandeep; Boyd, Joseph T.; Jackson, Howard E.

1987-01-01

Optical response to radiation at a wavelength of 10.6 microns in tungsten silicide-silicon Schottky barrier diodes has been observed. Incident photons excite electrons by means of junction plasmon assisted inelastic electron tunneling. At 78 K, a peak in the second derivative of current versus junction bias voltage was observed at a voltage corresponding to the energy of photons having a wavelength of 10.6 microns. This peak increased with increasing incident laser power, saturating at the highest laser powers investigated.

Method of Forming Three-Dimensional Semiconductors Structures

NASA Technical Reports Server (NTRS)

Fathauer, Robert W. (Inventor)

2002-01-01

Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow columns of metal silicide embedded in a matrix of single crystal, epitaxially grown silicon. Higher substrate temperatures and lower deposition rates yield larger columns that are farther apart while more silicon produces smaller columns. Column shapes and locations are selected by seeding the substrate with metal silicide starting regions. A variety of 3-dimensional, exemplary electronic devices are disclosed.

Practical field repair of fused slurry silicide coating for space shuttle t.p.s.

NASA Technical Reports Server (NTRS)

Reznik, B. D.

1971-01-01

Study of short-time high-temperature diffusion treatments as part of a program of development of methods of reapplying fused slurry silicide coating in the field. The metallographic structure and oxidation behavior of R512E applied to Cb-752 coated under simulated field repair conditions was determined. Oxidation testing in reduced pressure environment has shown that performance equivalent to furnace-processed specimens can be obtained in a two-minute diffusion at 2700 F.

Large magnetoresistance of nickel-silicide nanowires: non-equilibrium heating of magnetically-coupled dangling bonds.

PubMed

Kim, T; Chamberlin, R V; Bird, J P

2013-03-13

We demonstrate large (>100%) time-dependent magnetoresistance in nickel-silicide nanowires and develop a thermodynamic model for this behavior. The model describes nonequilibrium heating of localized spins in an increasing magnetic field. We find a strong interaction between spins but no long-range magnetic order. The spins likely come from unpaired dangling bonds in the interfacial layers of the nanowires. The model indicates that although these bonds couple weakly to a thermal bath, they dominate the nanowire resistance.

Welding Niobium Bearing HSLA Steels 'Myths and Magic'

NASA Astrophysics Data System (ADS)

Kirkwood, Phil

Niobium is not currently added to ferritic steels with the specific objective of improving weldability and is more likely to be present to harness its combined beneficial effects on strength and toughness. Nevertheless, as carbon levels in many classes of HSLA steel, are progressively reduced, there is an increasing awareness that, amongst the microalloying elements, niobium is uniquely placed to deliver the mechanical property combinations that modern specifications demand and simultaneously deliver a `bonus' by way of enhanced weldability.

Quench-age method for the fabrication of niobium-aluminum superconductors

DOEpatents

Pickus, Milton R.; Ciardella, Robert L.

1978-01-01

A flexible Nb.sub.3 Al superconducting wire is fabricated from a niobium-aluminum composite wire by heating to form a solid solution which is retained at room temperature as a metastable solid solution by quenching. The metastable solid solution is then transformed to the stable superconducting A-15 phase by low temperature aging. The transformation induced by aging can be controlled to yield either a multifilamentary or a solid A-15 core surrounded by ductile niobium.

The effects of preparation conditions for a BaNbO2 N photocatalyst on its physical properties.

PubMed

Hisatomi, Takashi; Katayama, Chisato; Teramura, Kentaro; Takata, Tsuyoshi; Moriya, Yosuke; Minegishi, Tsutomu; Katayama, Masao; Nishiyama, Hiroshi; Yamada, Taro; Domen, Kazunari

2014-07-01

BaNbO2 N is a semiconductor photocatalyst active for water oxidation under visible-light irradiation up to λ=740 nm. It is important to understand the nitridation processes of precursor materials to form BaNbO2 N to tune the physical properties and improve the photocatalytic activity. Comprehensive experiments and analyses of temperatures, durations, ammonia flow rates, and barium/niobium ratios in the precursor during the nitridation process reveals that faster ammonia flow rates and higher barium/niobium ratios in the precursors help to suppress reduction of pentavalent niobium ions in the nitridation products and that the use of a precursor prepared by a soft-chemistry route allows the production of BaNbO2 N at lower temperatures in shorter times than the use of physical mixtures of BaCO3 and Nb2 O5 because the niobium species is dispersed among the barium species. BaNbO2 N prepared by the soft-chemistry route exhibits comparatively higher activity than that prepared from physical mixtures of BaCO3 and Nb2 O5 , probably because of lower nitridation temperatures, which suppress excessive dissociation of ammonia, and thereby reduce pentavalent niobium ions, and intimate interaction of niobium and barium sources, which lowers the densities of mid-gap states associated with defects. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Braze material for joining ceramic to metal and ceramic to ceramic surfaces and joined ceramic to metal and ceramic to ceramic article

DOEpatents

Hunt, T.K.; Novak, R.F.

1991-05-07

An improved active metal braze filler material is provided in which the coefficient of thermal expansion of the braze filler is more closely matched with that of the ceramic and metal, or two ceramics, to provide ceramic to metal, or ceramic to ceramic, sealed joints and articles which can withstand both high temperatures and repeated thermal cycling without failing. The braze filler material comprises a mixture of a material, preferably in the form of a powder, selected from the group consisting of molybdenum, tungsten, silicon carbide and mixtures thereof, and an active metal filler material selected from the group consisting of alloys or mixtures of nickel and titanium, alloys or mixtures of nickel and zirconium, alloys or mixtures of nickel, titanium, and copper, alloys or mixtures of nickel, titanium, and zirconium, alloys or mixtures of niobium and nickel, alloys or mixtures of niobium and zirconium, alloys or mixtures of niobium and titanium, alloys or mixtures of niobium, titanium, and nickel, alloys or mixtures of niobium, zirconium, and nickel, and alloys or mixtures of niobium, titanium, zirconium, and nickel. The powder component is selected such that its coefficient of thermal expansion will effect the overall coefficient of thermal expansion of the braze material so that it more closely matches the coefficients of thermal expansion of the ceramic and metal parts to be joined. 3 figures.

Braze material for joining ceramic to metal and ceramic to ceramic surfaces and joined ceramic to metal and ceramic to ceramic article

DOEpatents

Hunt, Thomas K.; Novak, Robert F.

1991-01-01

An improved active metal braze filler material is provided in which the coefficient of thermal expansion of the braze filler is more closely matched with that of the ceramic and metal, or two ceramics, to provide ceramic to metal, or ceramic to ceramic, sealed joints and articles which can withstand both high temperatures and repeated thermal cycling without failing. The braze filler material comprises a mixture of a material, preferably in the form of a powder, selected from the group consisting of molybdenum, tungsten, silicon carbide and mixtures thereof, and an active metal filler material selected from the group consisting of alloys or mixtures of nickel and titanium, alloys or mixtures of nickel and zirconium, alloys or mixtures of nickel, titanium, and copper, alloys or mixtures of nickel, titanium, and zirconium, alloys or mixtures of niobium and nickel, alloys or mixtures of niobium and zirconium, alloys or mixtures of niobium and titanium, alloys or mixtures of niobium, titanium, and nickel, alloys or mixtures of niobium, zirconium, and nickel, and alloys or mixtures of niobium, titanium, zirconium, and nickel. The powder component is selected such that its coefficient of thermal expansion will effect the overall coefficient of thermal expansion of the braze material so that it more closely matches the coefficients of thermal expansion of the ceramic and metal parts to be joined.

Niobium hyperfine structure in crystal calcium tungstate

NASA Technical Reports Server (NTRS)

Tseng, D. L.; Kikuchi, C.

1972-01-01

A study of the niobium hyperfine structure in single crystal calcium tungstate was made by the combination of the technique of electron paramagnetic resonance and electron nuclear double resonance (EPR/ENDOR). The microwave frequency was about 9.4 GHz and the radio frequency from 20MHz to 70 MHz. The rare earth ions Nd(3+), U(3+), or Tm(3+) were added as the charge compensator for Nb(5+). To create niobium paramagnetic centers, the sample was irradiated at 77 deg K with a 10 thousand curie Co-60 gamma source for 1 to 2 hours at a dose rate of 200 K rads per hour and then transferred quickly into the cavity. In a general direction of magnetic field, the spectra showed 4 sets of 10 main lines corresponding to 4 nonequivalent sites of niobium with I = 9/2. These 4 sets of lines coalesced into 2 sets of 10 in the ab-plane and into a single set of 10 along the c-axis. This symmetry suggested that the tungsten ions are substituted by the niobium ions in the crystal.

Examination of total cross section resonance structure of niobium and silicon in neutron transmission experiments

NASA Astrophysics Data System (ADS)

Andrianova, Olga; Lomakov, Gleb; Manturov, Gennady

2017-09-01

The neutron transmission experiments are one of the main sources of information about the neutron cross section resonance structure and effect in the self-shielding. Such kind of data for niobium and silicon nuclides in energy range 7 keV to 3 MeV can be obtained from low-resolution transmission measurements performed earlier in Russia (with samples of 0.027 to 0.871 atom/barn for niobium and 0.076 to 1.803 atom/barn for silicon). A significant calculation-to-experiment discrepancy in energy range 100 to 600 keV and 300 to 800 keV for niobium and silicon, respectively, obtained using the evaluated nuclear data library ROSFOND, were found. The EVPAR code was used for estimation the average resonance parameters in energy range 7 to 600 keV for niobium. For silicon a stochastic optimization method was used to modify the resolved resonance parameters in energy range 300 to 800 keV. The improved ROSFOND evaluated nuclear data files were tested in calculation of ICSBEP integral benchmark experiments.

Effect of interstitial impurities on the field dependent microwave surface resistance of niobium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinello, M., E-mail: mmartine@fnal.gov; Checchin, M.; Department of Physics, Illinois Institute of Technology, Chicago, Illinois 60616

Previous work has demonstrated that the radio frequency surface resistance of niobium resonators is dramatically reduced when nitrogen impurities are dissolved as interstitial in the material. This effect is attributed to the lowering of the Mattis-Bardeen surface resistance with increasing accelerating field; however, the microscopic origin of this phenomenon is poorly understood. Meanwhile, an enhancement of the sensitivity to trapped magnetic field is typically observed for such cavities. In this paper, we conduct a systematic study on these different components contributing to the total surface resistance as a function of different levels of dissolved nitrogen, in comparison with standard surfacemore » treatments for niobium resonators. Adding these results together, we are able to show which is the optimum surface treatment that maximizes the Q-factor of superconducting niobium resonators as a function of expected trapped magnetic field in the cavity walls. These results also provide insights on the physics behind the change in the field dependence of the Mattis-Bardeen surface resistance, and of the trapped magnetic vortex induced losses in superconducting niobium resonators.« less

Quantitative EPMA of Nano-Phase Iron-Silicides in Apollo 16 Lunar Regolith

NASA Astrophysics Data System (ADS)

Gopon, P.; Fournelle, J.; Valley, J. W.; Pinard, P. T.; Sobol, P.; Horn, W.; Spicuzza, M.; Llovet, X.; Richter, S.

2013-12-01

Until recently, quantitative EPMA of phases under a few microns in size has been extremely difficult. In order to achieve analytical volumes to analyze sub-micron features, accelerating voltages between 5 and 8 keV need to be used. At these voltages the normally used K X-ray transitions (of higher Z elements) are no longer excited, and we must rely of outer shell transitions (L and M). These outer shell transitions are difficult to use for quantitative EPMA because they are strongly affected by different bonding environments, the error associated with their mass attenuation coefficients (MAC), and their proximity to absorption edges. These problems are especially prevalent for the transition metals, because of the unfilled M5 electron shell where the Lα transition originates. Previous studies have tried to overcome these limitations by using standards that almost exactly matched their unknowns. This, however, is cumbersome and requires accurate knowledge of the composition of your sample beforehand, as well as an exorbitant number of well characterized standards. Using a 5 keV electron beam and utilizing non-standard X-ray transitions (Ll) for the transition metals, we are able to conduct accurate quantitative analyses of phases down to ~300nm. The Ll transition in the transition metals behaves more like a core-state transition, and unlike the Lα/β lines, is unaffected by bonding effects and does not lie near an absorption edge. This allows for quantitative analysis using standards do not have to exactly match the unknown. In our case pure metal standards were used for all elements except phosphorus. We present here data on iron-silicides in two Apollo 16 regolith grains. These plagioclase grains (A6-7 and A6-8) were collected between North and South Ray Craters, in the lunar highlands, and thus are associated with one or more large impact events. We report the presence of carbon, nickel, and phosphorus (in order of abundance) in these iron-silicide phases. Although carbon is an especially difficult measurement, (with contamination from the lab environment, sample, and vacuum system being a large problem) we found that the iron-silicide phases contain a few weight percent carbon. X-ray mapping shows carbon to be concentrated within the silicide blebs. We conducted sample reference (i.e. baseline) carbon measurements in standards mounted in the same block as the sample, to establish a contamination baseline then any carbon measured above this baseline was assumed to be real. This finding seems to indicate that while the iron-silicide phases formed in the reducing conditions of the lunar surface, these conditions were not low enough to form the phases on their own and needed the presence of carbon to reduce them down to the much lower reducing conditions were native silicon is stable. The source of the carbon and nickel found in the iron-silicides is most likely form an impactor, rather than from the lunar surface.

Understanding Quality Factor Degradation in Superconducting Niobium Cavities at Low Microwave Field Amplitudes

DOE PAGES

Romanenko, A.; Schuster, D. I.

2017-12-28

In niobium superconducting radio frequency (SRF) cavities for particle acceleration, a decrease of the quality factor at lower fields—a so-called low field Q slope or LFQS—has been a long-standing unexplained effect. By extending the high Q measurement techniques to ultralow fields, we discover two previously unknown features of the effect: (i) saturation at rf fields lower than E acc~0.1 MV/m; (ii) strong degradation enhancement by growing thicker niobium pentoxide. Our findings suggest that the LFQS may be caused by the two level systems in the natural niobium oxide on the inner cavity surface, thereby identifying a new source of residual resistance andmore » providing guidance for potential nonaccelerator low-field applications of SRF cavities.« less

STUDIES ON ANALYTICAL METHODS FOR TRACE ELEMENTS IN METALS BY USING RADIOACTIVE ISOTOPE. III. DETERMINATION OF TANTALUM BY MEANS OF ISOTOPE DILUTION METHOD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amano, H.

1959-10-01

The determination of tantalum by the isotope dilution method in the presence of niobium was investigated by the use of the radioisotope Ta/sup 185/. Tantalum was separated from niobium as tantalum-tannin precipitate under the optimum conditions of a pH of 1.9 to 2.5 and a tantalum/niobium ratio of up to 1/ 50. If niobium was present in amounts 100 times or more that of tantalum, reprecipitation was needed. The reciprocal of the specific activity of tanthlum pentoxide precipitate was in a linear relation to the change in the amount of tantalum added. The recommended method gave an accurate result inmore » the determination of tantalum in steal. (auth)« less

Understanding Quality Factor Degradation in Superconducting Niobium Cavities at Low Microwave Field Amplitudes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Romanenko, A.; Schuster, D. I.

In niobium superconducting radio frequency (SRF) cavities for particle acceleration, a decrease of the quality factor at lower fields—a so-called low field Q slope or LFQS—has been a long-standing unexplained effect. By extending the high Q measurement techniques to ultralow fields, we discover two previously unknown features of the effect: (i) saturation at rf fields lower than E acc~0.1 MV/m; (ii) strong degradation enhancement by growing thicker niobium pentoxide. Our findings suggest that the LFQS may be caused by the two level systems in the natural niobium oxide on the inner cavity surface, thereby identifying a new source of residual resistance andmore » providing guidance for potential nonaccelerator low-field applications of SRF cavities.« less

Wear Resistance Enhancement of Ti-6Al-4 V Alloy by Applying Zr-Modified Silicide Coatings

NASA Astrophysics Data System (ADS)

Li, Xuan; Hu, Guangzhong; Tian, Jin; Tian, Wei; Xie, Wenling; Li, Xiulan

2018-03-01

Zr-modified silicide coatings were prepared on Ti-6Al-4 V alloy by pack cementation process to enhance its wear resistance. The microstructure and wear properties of the substrate and the coatings were comparatively investigated using GCr15 and Al2O3 as the counterparts under different sliding loads. The obtained Zr-modified silicide coating had a multilayer structure, consisting of a thick (Ti, X)Si2 (X represents Al, Zr and V elements) outer layer, a TiSi middle layer and a Ti5Si4 + Ti5Si3 inner layer. The micro-hardness of the coating was much higher than the substrate and displayed a decrease tendency from the coating surface to the interior. Sliding against either GCr15 or Al2O3 balls, the coatings showed superior anti-friction property to the Ti-6Al-4 V alloy, as confirmed by its much lower wear rate under each employed sliding condition.

Plasma-enhanced deposition and processing of transition metals and transition metal silicides for VLSI

NASA Astrophysics Data System (ADS)

Hess, D. W.

1986-05-01

Radiofrequency (rf) discharges have been used to deposit films of tungsten, molybdenum and titanium silicide. As-deposited tungsten films, from tungsten hexafluoride and hydrogen source gases, were metastable (beta W), with significant (>1 atomic percent) fluorine incorporation. Film resistivities were 40-55 micro ohm - cm due to the beta W, but dropped to about 8 micro ohm cm after a short heat treatment at 700 C which resulted in a phase transition to alpha W (bcc form). The high resistivity (>10,000 micro ohm) associated with molybdenum films deposited from molybdenum hexafluoride and hydrogen appeared to be a result of the formation of molybdenum trifluoride in the deposited material. Titanium silicide films formed from a discharge of titanium tetrachloride, silane, and hydrogen, displayed resistivities of about 150 micro ohm cm, due to small amounts of oxygen and chlorine incorporated during deposition. Plasma etching studies of tungsten films with fluorine containing gases suggest that the etchant species for tungsten in these discharges are fluorine atoms.

Polycrystalline silicon on tungsten substrates

NASA Technical Reports Server (NTRS)

Bevolo, A. J.; Schmidt, F. A.; Shanks, H. R.; Campisi, G. J.

1979-01-01

Thin films of electron-beam-vaporized silicon were deposited on fine-grained tungsten substrates under a pressure of about 1 x 10 to the -10th torr. Mass spectra from a quadrupole residual-gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. During separate silicon depositions, the atomically clean substrates were maintained at various temperatures between 400 and 780 C, and deposition rates were between 20 and 630 A min. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition, and annealing. Auger depth profiling, X-ray analysis, and SEM in the topographic and channeling modes were utilized to characterize the samples with respect to silicon-metal interface, interdiffusion, silicide formation, and grain size of silicon. The onset of silicide formation was found to occur at approximately 625 C. Above this temperature tungsten silicides were formed at a rate faster than the silicon deposition. Fine-grain silicon films were obtained at lower temperatures.

Interfacial reactions in borsic/Ti-3Al-2-1/2V composite

NASA Technical Reports Server (NTRS)

Rao, V. B.; Houska, C. R.; Unnam, J.; Brewer, W. D.; Tenney, D. R.

1979-01-01

The paper provides a detailed X-ray characterization of a borsic/Ti-3Al-2-1/2V composite, and to correlate the relative intensities of the reaction products with the mechanical properties. Based on X-ray integrated intensity data two stages of interface reactions were identified: during the first stage there is a simultaneous interdiffusion of Si, C, and Ti atoms at the filament/matrix interface resulting in the formation of Ti5Si3, TiSi and small amounts of TiSi2 and TiC. The second stage is associated with considerable TiSi2 and boride formation. It appears that the alpha-phase of Ti is more reactive in forming silicides and borides than the beta-phase. The silicide intensities and the reaction zone thicknesses are shown to be directly related to the reduction of the ultimate tensile strength by thermal degradation, and the results indicate that silicide reaction products are as detrimental to strength as the borides.

Interfacial structure of two-dimensional epitaxial Er silicide on Si(111)

NASA Astrophysics Data System (ADS)

Tuilier, M. H.; Wetzel, P.; Pirri, C.; Bolmont, D.; Gewinner, G.

1994-07-01

Auger-electron diffraction (AED) and surface-extended x-ray-absorption fine structure (SEXAFS) have been used to obtain a complete description of the atomic structure of a two-dimensional epitaxial Er silicide layer on Si(111). AED reveals that a monolayer of Er is located underneath a buckled Si double layer. The relevant Er-Si interlayer spacings are determined by means of single scattering cluster simulations and a R-factor analysis to be 1.92+/-0.05 Å to the first and 2.70+/-0.05 Å to the second Si top layer. Er near-neighbor bond lengths and coordination numbers are obtained independently from polarization-dependent SEXAFS. The SEXAFS data, when combined with the Si top-layer geometry inferred from AED, permit the determination of the atomic positions at the silicide/Si(111) interface. The Er is found to reside in relaxed T4 sites of Si(111) with a single Er-Si distance of 3.09+/-0.04 Å to the first- and second-layer Si atoms of the substrate.

Structure, growth kinetics, and ledge flow during vapor-solid-solid growth of copper-catalyzed silicon nanowires.

PubMed

Wen, C-Y; Reuter, M C; Tersoff, J; Stach, E A; Ross, F M

2010-02-10

We use real-time observations of the growth of copper-catalyzed silicon nanowires to determine the nanowire growth mechanism directly and to quantify the growth kinetics of individual wires. Nanowires were grown in a transmission electron microscope using chemical vapor deposition on a copper-coated Si substrate. We show that the initial reaction is the formation of a silicide, eta'-Cu(3)Si, and that this solid silicide remains on the wire tips during growth so that growth is by the vapor-solid-solid mechanism. Individual wire directions and growth rates are related to the details of orientation relation and catalyst shape, leading to a rich morphology compared to vapor-liquid-solid grown nanowires. Furthermore, growth occurs by ledge propagation at the silicide/silicon interface, and the ledge propagation kinetics suggest that the solubility of precursor atoms in the catalyst is small, which is relevant to the fabrication of abrupt heterojunctions in nanowires.

Kinetic analysis of the combustion synthesis of molybdenum and titanium silicides

NASA Astrophysics Data System (ADS)

Wang, Lily L.; Munir, Z. A.

1995-05-01

The temperature profiles associated with the passage of self-propagating combustion waves during the synthesis of MoSi2 and Ti5Si3 were determined. From these profiles, kinetic analyses of the combustion synthesis process for these two silicides were made. The synthesis is associated with high heating rates: 1.3 × 104 and 4.9 × 104 K·s-1 for MoSi2 and Ti5Si3, respectively. The width of the combustion zone was determined as 1.3 and 1.8 mm for the silicides of Mo and Ti, respectively. The degree of conversion, η, and its spatial distribution and the conversion rate, ∂η/∂t, were determined. However, because of the inherent characteristics of wave propagation in MoSi2, only in the case of Ti5Si3 could the activation energy be calculated. An average value of 190 kJ µ mol-1 was determined for titanium suicide.

Boron modified molybdenum silicide and products

DOEpatents

Meyer, M.K.; Akinc, M.

1999-02-02

A boron-modified molybdenum silicide material is disclosed having the composition comprising about 80 to about 90 weight % Mo, about 10 to about 20 weight % Si, and about 0.1 to about 2 weight % B and a multiphase microstructure including Mo{sub 5}Si{sub 3} phase as at least one microstructural component effective to impart good high temperature creep resistance. The boron-modified molybdenum silicide material is fabricated into such products as electrical components, such as resistors and interconnects, that exhibit oxidation resistance to withstand high temperatures in service in air as a result of electrical power dissipation, electrical resistance heating elements that can withstand high temperatures in service in air and other oxygen-bearing atmospheres and can span greater distances than MoSi{sub 2} heating elements due to improved creep resistance, and high temperature structural members and other fabricated components that can withstand high temperatures in service in air or other oxygen-bearing atmospheres while retaining creep resistance associated with Mo{sub 5}Si{sub 3} for structural integrity. 7 figs.

Boron modified molybdenum silicide and products

DOEpatents

Meyer, Mitchell K.; Akinc, Mufit

1999-02-02

A boron-modified molybdenum silicide material having the composition comprising about 80 to about 90 weight % Mo, about 10 to about 20 weight % Si, and about 0.1 to about 2 weight % B and a multiphase microstructure including Mo.sub.5 Si.sub.3 phase as at least one microstructural component effective to impart good high temperature creep resistance. The boron-modified molybdenum silicide material is fabricated into such products as electrical components, such as resistors and interconnects, that exhibit oxidation resistance to withstand high temperatures in service in air as a result of electrical power dissipation, electrical resistance heating elements that can withstand high temperatures in service in air and other oxygen-bearing atmospheres and can span greater distances than MoSi.sub.2 heating elements due to improved creep resistance, and high temperature structural members and other fabricated components that can withstand high temperatures in service in air or other oxygen-bearing atmospheres while retaining creep resistance associated with Mo.sub.5 Si.sub.3 for structural integrity.

Facile Preparation of a Platinum Silicide Nanoparticle-Modified Tip Apex for Scanning Kelvin Probe Microscopy.

PubMed

Lin, Chun-Ting; Chen, Yu-Wei; Su, James; Wu, Chien-Ting; Hsiao, Chien-Nan; Shiao, Ming-Hua; Chang, Mao-Nan

2015-12-01

In this study, we propose an ultra-facile approach to prepare a platinum silicide nanoparticle-modified tip apex (PSM tip) used for scanning Kelvin probe microscopy (SKPM). We combined a localized fluoride-assisted galvanic replacement reaction (LFAGRR) and atmospheric microwave annealing (AMA) to deposit a single platinum silicide nanoparticle with a diameter of 32 nm on the apex of a bare silicon tip of atomic force microscopy (AFM). The total process was completed in an ambient environment in less than 3 min. The improved potential resolution in the SKPM measurement was verified. Moreover, the resolution of the topography is comparable to that of a bare silicon tip. In addition, the negative charges found on the PSM tips suggest the possibility of exploring the use of current PSM tips to sense electric fields more precisely. The ultra-fast and cost-effective preparation of the PSM tips provides a new direction for the preparation of functional tips for scanning probe microscopy.

Copper silicide/silicon nanowire heterostructures: in situ TEM observation of growth behaviors and electron transport properties.

PubMed

Chiu, Chung-Hua; Huang, Chun-Wei; Chen, Jui-Yuan; Huang, Yu-Ting; Hu, Jung-Chih; Chen, Lien-Tai; Hsin, Cheng-Lun; Wu, Wen-Wei

2013-06-07

Copper silicide has been studied in the applications of electronic devices and catalysts. In this study, Cu3Si/Si nanowire heterostructures were fabricated through solid state reaction in an in situ transmission electron microscope (TEM). The dynamic diffusion of the copper atoms in the growth process and the formation mechanism are characterized. We found that two dimensional stacking faults (SF) may retard the growth of Cu3Si. Due to the evidence of the block of edge-nucleation (heterogeneous) by the surface oxide, center-nucleation (homogeneous) is suggested to dominate the silicidation. Furthermore, the electrical transport properties of various silicon channel length with Cu3Si/Si heterostructure interfaces and metallic Cu3Si NWs have been investigated. The observations not only provided an alternative pathway to explore the formation mechanisms and interface properties of Cu3Si/Si, but also suggested the potential application of Cu3Si at nanoscale for future processing in nanotechnology.

Revealing lithium-silicide phase transformations in nano-structured silicon-based lithium ion batteries via in situ NMR spectroscopy.

PubMed

Ogata, K; Salager, E; Kerr, C J; Fraser, A E; Ducati, C; Morris, A J; Hofmann, S; Grey, C P

2014-01-01

Nano-structured silicon anodes are attractive alternatives to graphitic carbons in rechargeable Li-ion batteries, owing to their extremely high capacities. Despite their advantages, numerous issues remain to be addressed, the most basic being to understand the complex kinetics and thermodynamics that control the reactions and structural rearrangements. Elucidating this necessitates real-time in situ metrologies, which are highly challenging, if the whole electrode structure is studied at an atomistic level for multiple cycles under realistic cycling conditions. Here we report that Si nanowires grown on a conducting carbon-fibre support provide a robust model battery system that can be studied by (7)Li in situ NMR spectroscopy. The method allows the (de)alloying reactions of the amorphous silicides to be followed in the 2nd cycle and beyond. In combination with density-functional theory calculations, the results provide insight into the amorphous and amorphous-to-crystalline lithium-silicide transformations, particularly those at low voltages, which are highly relevant to practical cycling strategies.

Low noise niobium dc SQUID with a planar input coil

NASA Astrophysics Data System (ADS)

de Waal, V. J.; van den Hamer, P.; Klapwijk, T. M.

1983-02-01

A practical all-niobium dc superconducting quantum interference device (SQUID) with a niobium spiral input coil has been developed. The SQUID utilizes submicron Josephson junctions. The best intrinsic energy resolution obtained with a 1-nH SQUID is 4×10-32 J/Hz. A 20-turn 1.2-μH input coil is coupled to a 2.3-nH SQUID with an efficiency of 0.5. The energy resolution with respect to the coil is 1×10-30 J/Hz.

Hardness behavior of binary and ternary niobium alloys at 77 and 300 K

NASA Technical Reports Server (NTRS)

Stephens, J. R.; Witzke, W. R.

1974-01-01

The effects of alloy additions of zirconium, hafnium, molybdenum, tungsten, rhenium, ruthenium, osmium, rhodium, and iridium on the hardness of niobium was determined. Both binary and ternary alloys were investigated by means of hardness tests at 77 K and 300 K. Results showed that atomic size misfit plays a dominant role in controlling hardness of binary niobium alloys. Alloy softening, which occurred at dilute solute additions, is most likely due to an extrinsic mechanism involving interaction between solute elements and interstitial impurities.

Niobium-Matrix-Composite High-Temperature Turbine Blades

NASA Technical Reports Server (NTRS)

Kaplan, Richard B.; Tuffias, Robert H.; La Ferla, Raffaele; Heng, Sangvavann; Harding, John T.

1995-01-01

High-temperture composite-material turbine blades comprising mainly niobium matrices reinforced with refractory-material fibers being developed. Of refractory fibrous materials investigated, FP-AL(2)0(3), tungsten, and polymer-based SiC fibers most promising. Blade of this type hollow and formed in nearly net shape by wrapping mesh of reinforcing refractory fibers around molybdenum mandrel, then using thermal-gradient chemical-vapor infiltration (CVI) to fill interstices with niobium. CVI process controllable and repeatable, and kinetics of both deposition and infiltration well understood.

Role of atomic bonding for compound and glass formation in Ni-Si, Pd-Si, and Ni-B systems

NASA Astrophysics Data System (ADS)

Tanaka, K.; Saito, T.; Suzuki, K.; Hasegawa, R.

1985-11-01

Valence electronic structures of crystalline compounds and glassy alloys of Ni silicides, Pd silicides, and Ni borides are studied by soft-x-ray spectroscopy over wide ranges of Si and B concentrations. The samples prepared include bulk compounds, glassy ribbons, and amorphous sputtered films. Silicon Kβ emissions of Ni and Pd silicides generally consist of a prominent peak fixed at ~=4.5 and ~=5.8 eV below the Fermi level EF, respectively, with a shoulder near EF which grows and shifts toward lower energy with increasing Si concentration. The former is identified as due to Si p-like states forming Si 3p-Ni 3d or Si 3p-Pd 4d bonding states while the latter as due to the corresponding antibonding states. Ni L3 and Pd L3 emissions of these silicides indicate that Ni 3d and Pd 4d states lie between the above two states. These local electronic configurations are consistent with partial-density-of-states (PDOS) calculations performed by Bisi and Calandra. Similar electronic configurations are suggested for Ni borides from B Kα and Ni L3 emissions. Differences of emission spectra between compounds and glasses of similar compositions are rather small, but some enhancement of the contribution of antibonding states to the PDOS near EF is suggested for certain glasses over that of the corresponding compounds. These features are discussed in connection with the compound stability and glass formability.

On the interdiffusion in multilayered silicide coatings for the vanadium-based alloy V-4Cr-4Ti

NASA Astrophysics Data System (ADS)

Chaia, N.; Portebois, L.; Mathieu, S.; David, N.; Vilasi, M.

2017-02-01

To provide protection against corrosion at high temperatures, silicide diffusion coatings were developed for the V-4Cr-4Ti alloy, which can be used as the fuel cladding in next-generation sodium-cooled fast breeder reactors. The multilayered coatings were prepared by halide-activated pack cementation using MgF2 as the transport agent and pure silicon (high activity) as the master alloy. Coated pure vanadium and coated V-4Cr-4Ti alloy were studied and compared as substrates. In both cases, the growth of the silicide layers (V3Si, V5Si3, V6Si5 and VSi2) was controlled exclusively by solid-state diffusion, and the growth kinetics followed a parabolic law. Wagner's analysis was adopted to calculate the integrated diffusion coefficients for all silicides. The estimated values of the integrated diffusion coefficients range from approximately 10-9 to 10-13 cm2 s-1. Then, a diffusion-based numerical approach was used to evaluate the growth and consumption of the layers when the coated substrates were exposed at critical temperatures. The estimated lifetimes of the upper VSi2 layer were 400 h and 280 h for pure vanadium and the V-4Cr-4Ti alloy, respectively. The result from the numeric simulation was in good agreement with the layer thicknesses measured after aging the coated samples at 1150 °C under vacuum.

Electroplating and stripping copper on molybdenum and niobium

NASA Technical Reports Server (NTRS)

Power, J. L.

1978-01-01

Molybdenum and niobium are often electroplated and subsequently stripped of copper. Since general standard plating techniques produce poor quality coatings, general procedures have been optimized and specified to give good results.

Iron-niobium-aluminum alloy having high-temperature corrosion resistance

DOEpatents

Hsu, Huey S.

1988-04-14

An alloy for use in high temperature sulfur and oxygen containing environments, having aluminum for oxygen resistance, niobium for sulfur resistance and the balance iron, is discussed. 4 figs., 2 tabs.

A-15 Superconducting composite wires and a method for making

DOEpatents

Suenaga, Masaki; Klamut, Carl J.; Luhman, Thomas S.

1984-01-01

A method for fabricating superconducting wires wherein a billet of copper containing filaments of niobium or vanadium is rolled to form a strip which is wrapped about a tin-alloy core to form a composite. The alloy is a tin-copper alloy for niobium filaments and a gallium-copper alloy for vanadium filaments. The composite is then drawn down to a desired wire size and heat treated. During the heat treatment process, the tin in the bronze reacts with the niobium to form the superconductor niobium tin. In the case where vanadium is used, the gallium in the gallium bronze reacts with the vanadium to form the superconductor vanadium gallium. This new process eliminates the costly annealing steps, external tin plating and drilling of bronze ingots required in a number of prior art processes.

Wrapping process for fabrication of A-15 superconducting composite wires

DOEpatents

Suenaga, M.; Klamut, C.J.; Luhman, T.S.

1980-08-15

A method for fabricating superconducting wires wherein a billet of copper containing filaments of niobium or vanadium is rolled to form a strip which is wrapped about a tin-alloy core to form a composite. The alloy is a tin-copper alloy for niobium filaments and a gallium-copper alloy for vanadium filaments. The composite is then drawn down to a desired wire size and heat treated. During the heat treatment process, the tin in the bronze reacts with the niobium to form the superconductor niobium tin. In the case where vanadium is used, the gallium in the gallium bronze reacts with the vanadium to form the superconductor vanadium gallium. This new process eliminates the costly annealing steps, external tin plating and drilling of bronze ingots required in a number of prior art processes.

SRF niobium characterization using SIMS and FIB-TEM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stevie, F. A.

2015-12-04

Our understanding of superconducting radio frequency (SRF) accelerator cavities has been improved by elemental analysis at high depth resolution and by high magnification microscopy. This paper summarizes the technique development and the results obtained on poly-crystalline, large grain, and single crystal SRF niobium. Focused ion beam made possible sample preparation using transmission electron microscopy and the images obtained showed a very uniform oxide layer for all samples analyzed. Secondary ion mass spectrometry indicated the presence of a high concentration of hydrogen and the hydrogen content exhibited a relationship with improvement in performance. Depth profiles of carbon, nitrogen, and oxygen didmore » not show major differences with heat treatment. Niobium oxide less than 10 nm thick was shown to be an effective hydrogen barrier. Niobium with titanium contamination showed unexpected performance improvement.« less

Crystallography and Morphology of Niobium Carbide in As-Cast HP-Niobium Reformer Tubes

NASA Astrophysics Data System (ADS)

Buchanan, Karl G.; Kral, Milo V.

2012-06-01

The microstructures of two as-cast heats of niobium-modified HP stainless steels were characterized. Particular attention was paid to the interdendritic niobium-rich carbides formed during solidification of these alloys. At low magnifications, these precipitates are grouped in colonies of similar lamellae. Higher magnifications revealed that the lamellae actually obtain two distinct morphologies. The type I morphology exhibits broad planar interfaces with a smooth platelike shape. Type II lamellae have undulating interfaces and an overall reticulated shape. To provide further insight into the origin of these two different morphologies, the microstructure and crystallography of each have been studied in detail using high resolution scanning electron microscopy, transmission electron microscopy, various electron diffraction methods (electron backscatter diffraction (EBSD), selected area diffraction (SAD), and convergent beam electron diffraction (CBED)), and energy dispersive X-ray spectroscopy.

Structure of a bimetallic strip produced by plasma spraying of a TiAl powder on a niobium sheet

NASA Astrophysics Data System (ADS)

Povarova, K. B.; Antonova, A. V.; Burmistrov, V. I.; Safronov, B. V.; Perfilov, L. S.; Chukanov, A. P.

2007-10-01

Ti-48 at % Al alloy granules produced by centrifugal spraying are milled into a powder with a particle size of 40 100 μm, and are applied onto a niobium foil using plasma spraying in an argon atmosphere. The fabricated TiAl/Nb bimetallic strip consists of a 100-μm-thick niobium layer and a porous 300-to 400-μm-thick TiAl layer formed by flattened particles. Directly after the preparation of the bimetallic strip, the surface of the TiAl porous layer is rough. Vacuum annealing at 1000, 1100, and 1200°C for 0.5 1.5 h leads to intense pore healing. After deposition and annealing, the interlayer adhesion is strong. The preparation of TiAl granules and spraying of the powder is accompanied by aluminum depletion of the Ti-48 at % Al alloy to 42 45 at % and an increase in the fraction of the α2-Ti3Al phase in the deposited layer. The prepared material has a duplex structure. An intermediate diffuse layer characterized by a variable composition and thickness is formed at the interface. This layer consists of two solid solutions; one of them, which is formed at the TiAl layer, is an α2-Ti3Al-based solid solution of niobium and the other, which is formed at the niobium foil, is a niobium-based solid solution of titanium and aluminum.

Mechanical properties of niobium radio-frequency cavities

DOE PAGES

Ciovati, Gianluigi; Dhakal, Pashupati; Matalevich, Joseph R.; ...

2015-07-02

Radio-frequency cavities made of bulk niobium are one of the components used in modern particle accelerators. The mechanical stability is an important aspect of cavity design, which typically relies on finite-element analysis simulations using material properties from tensile tests on sample. This contribution presents the results of strain and resonant frequency measurements as a function of a uniform pressure up to 722 kPa, applied to single-cell niobium cavities with different crystallographic structure, purity and treatments. In addition, burst tests of high-purity multi-cell cavities with different crystallographic structure have been conducted up to the tensile strength of the material. Finite-element analysismore » of the single-cell cavity geometry is in good agreement with the observed behavior in the elastic regime assuming a Young's modulus value of 88.5 GPa and a Poisson's ratio of 0.4, regardless of crystallographic structure, purity or treatment. However, the measured yield strength and tensile strength depend on crystallographic structure, material purity and treatment. In particular, the results from this study show that the mechanical properties of niobium cavities with large crystals are comparable to those of cavities made of fine-grain niobium.« less

Structure and Thermal Stability of High-Strength Cu-18Nb Composite Depending on the Degree of Deformation

NASA Astrophysics Data System (ADS)

Deryagina, I. L.; Popova, E. N.; Valova-Zaharevskaya, E. G.; Patrakov, E. I.

2018-01-01

The microstructure and thermal stability of multifiber in situ Cu-18Nb composites with a true strain ( e) of 10.2 and 12.5 have been studied by the methods of scanning and transmission electron microscopy and X-ray diffraction analysis. It has been established that niobium dendrites in the copper matrix acquire the shape of ribbons with thicknesses of less than 100 nm under strong plastic deformation. As the strain grows, the thickness of niobium ribbons decreases, and the degree of axial texture <110>Nb║<111>Cu║DA (drawing axes) and the macrostresses in the crystal lattice of niobium increase. Interplanar distances between adjacent {110}Nb planes are stretched in the longitudinal section of the composites and reduced in their transversal section under the action of macrostresses. It has been shown that, as a result of the annealing of these composites, niobium fibers sustain coagulation, which begins at 300°C, actively develops with increasing temperature, and leads to the appreciable softening of a composite at 700°C. The softening of a composite after the annealing is accompanied by the relaxation of macrostresses in niobium and the recovery of its unit cell parameters to standard values.

Characterization of Ultra High Temperature Ceramics via Transmission Electron Microscopy. Part 2: UHTCs sintered with addition of TaSi2

DTIC Science & Technology

2010-01-21

substituted by Hf in the TaSi2 phase, indicating that this silicide has a great solubility for the group IV metals . At the triple point junctions Ta5Si3...Mathis Müller for his precious help in TEM specimens’ preparations . FA8655-09-M-4002 40 References 1. L. E. Toth: Transition Metal Carbides and...Transition Metal Disilicides,’ Acta Mater., 44, 3035 (1996). 21. H. Pastor and R. Meyer: An Investigation of the Effect of Additions of Metal Silicides

Basic factors controlling pest in high temperature systems

NASA Technical Reports Server (NTRS)

Berkowitz-Mattuck, J.; Rossetti, M.

1971-01-01

The catastrophic disintegration in air at intermediate temperatures of refractory materials which are very resistant to oxidation at high temperatures is known as pest. A study was undertaken to determine whether the mechanism proposed for pest failure in silicides might also be responsible for pest failure in NbAl3. The aim was to correlate oxidation kinetics in the range where disintegration of NbAl3 is observed with delayed failure data obtained under similar conditions. Studies were also undertaken to develop some understanding of deformation mechanisms in both silicides and aluminides.

Electron and Phonon Engineered Nano- and Heterostructures for Increased Speed and Performance Enhancement of the Electronic and Optoelectronic Devices

DTIC Science & Technology

2011-01-01

doped source and drain form ohmic contact to metal silicide [2]-[6] due to their immunity to short channel effect [7]-[10]. In this project, we...investigated the hole mobility of SB Si NW. II. Device Fabrication Technology We prepared SiNWs by Au-catalyzed vapor-transport as described in Ref. [11...overlapping Ti/Au (70/50 nm) top gate is defined. Devices are characterized at this stage and also after annealing. III. Silicide Formation Our devices

Fine structure of the K X-ray absorption spectra of titanium in some hydrides, borides, and silicides (in Russian)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vainshtein, �. E.; Zhurakovskii, E. A.

1959-08-01

X-ray spectral analyses confirmed the hypothesis on the metal-like state of hydrogen in tithnium hydrides. Experiments with titunium borides and silicides indicate the special character and degree of the 3d--level participation in the metallic'' bond between the atoms of various complexes. The structure of metalloid elements becomes more complicated with an increase in the specific number of boron and silicon atoms and the bond between the atoms tends to become covalent. (R.V.J.)

On the structural and electronic properties of Ir-silicide nanowires on Si(001) surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fatima,; Hossain, Sehtab; Mohottige, Rasika

Iridium (Ir) modified Silicon (Si) (001) surface is studied with Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Density Functional Theory (DFT). A model for Ir-silicide nanowires based on STM images and ab-initio calculations is proposed. According to our model, the Ir adatom is on the top of the substrate dimer row and directly binds to the dimer atoms. I-V curves measured at 77 K shows that the nanowires are metallic. DFT calculations confirm strong metallic nature of the nanowires.

Progress in doping of ruthenium silicide (Ru2Si3)

NASA Technical Reports Server (NTRS)

Vining, C. B.; Allevato, C. E.

1992-01-01

Ruthenium silicide is currently under development as a promising thermoelectric material suitable for space power applications. Key to realizing the potentially high figure of merit values of this material is the development of appropriate doping techniques. In this study, manganese and iridium have been identified as useful p- and n-type dopants, respectively. Resistivity values have been reduced by more than 3 orders of magnitude. Anomalous Hall effect results, however, complicate interpretation of some of the results and further effort is required to achieve optimum doping levels.

Niobium-aluminum base alloys having improved, high temperature oxidation resistance

NASA Technical Reports Server (NTRS)

Hebsur, Mohan G. (Inventor); Stephens, Joseph R. (Inventor)

1991-01-01

A niobium-aluminum base alloy having improved oxidation resistance at high temperatures and consisting essentially of 48%-52% niobium, 36%-42% aluminum, 4%-10% chromium, 0%-2%, more preferably 1%-2%, silicon and/or tungsten with tungsten being preferred, and 0.1%-2.0% of a rare earth selected from the group consisting of yttrium, ytterbium and erbium. Parabolic oxidation rates, k.sub.p, at 1200.degree. C. range from about 0.006 to 0.032 (mg/cm.sup.2).sup.2 /hr. The new alloys also exhibit excellent cyclic oxidation resistance.

Recovery of niobium from irradiated targets

DOEpatents

Phillips, Dennis R.; Jamriska, Sr., David J.; Hamilton, Virginia T.

1994-01-01

A process for selective separation of niobium from proton irradiated molybdenum targets is provided and includes dissolving the molybdenum target in a hydrogen peroxide solution to form a first ion-containing solution, contacting the first ion-containing solution with a cationic resin whereby ions selected form the group consisting of molybdenum, biobium, technetium, selenium, vanadium, arsenic, germanium, zirconium and rubidium remain in a second ion-containing solution while ions selected from the group consisting of rubidium, zinc, beryllium, cobalt, iron, manganese, chromium, strontium, yttrium and zirconium are selectively adsorbed by the cationic resin; adjusting the pH of the second ion-containing solution to within a range of from about 5.0 to about 6.0; contacting the pH adjusting second ion-containing solution with a dextran-based material for a time to selectively separate niobium from the solution and recovering the niobium from the dextran-based material.

Cytotoxicity of titanium and titanium alloying elements.

PubMed

Li, Y; Wong, C; Xiong, J; Hodgson, P; Wen, C

2010-05-01

It is commonly accepted that titanium and the titanium alloying elements of tantalum, niobium, zirconium, molybdenum, tin, and silicon are biocompatible. However, our research in the development of new titanium alloys for biomedical applications indicated that some titanium alloys containing molybdenum, niobium, and silicon produced by powder metallurgy show a certain degree of cytotoxicity. We hypothesized that the cytotoxicity is linked to the ion release from the metals. To prove this hypothesis, we assessed the cytotoxicity of titanium and titanium alloying elements in both forms of powder and bulk, using osteoblast-like SaOS(2) cells. Results indicated that the metal powders of titanium, niobium, molybdenum, and silicon are cytotoxic, and the bulk metals of silicon and molybdenum also showed cytotoxicity. Meanwhile, we established that the safe ion concentrations (below which the ion concentration is non-toxic) are 8.5, 15.5, 172.0, and 37,000.0 microg/L for molybdenum, titanium, niobium, and silicon, respectively.

New porous titanium–niobium oxide for photocatalytic degradation of bromocresol green dye in aqueous solution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chaleshtori, Maryam Zarei, E-mail: mzarei@utep.edu; Hosseini, Mahsa; Edalatpour, Roya

2013-10-15

Graphical abstract: The photocatalytic activity of different porous titanium–niobium oxides was evaluated toward degradation of bromocresol green (BG) under UV light. A better catalytic activity was observed for all samples at lower pH. Catalysts have a stronger ability for degradation of BG in acid media than in alkaline media. - Highlights: • Different highly structured titanium–niobium oxides have been prepared using improved methods of synthesis. • Photo-degradation of bromocresol green dye (BG) with nanostructure titanium–niobium oxide catalysts was carried out under UV light. • The photo-catalytic activity of all catalysts was higher in lower pH. • Titanium–niobium oxide catalysts aremore » considerably stable and reusable. - Abstract: In this study, high surface area semiconductors, non porous and porous titanium–niobium oxides derived from KTiNbO{sub 5} were synthesized, characterized and developed for their utility as photocatalysts for decontamination with sunlight. These materials were then used in the photocatalytic degradation of bromocresol green dye (BG) in aqueous solution using UV light and their catalytic activities were evaluated at various pHs. For all catalysts, the photocatalytic degradation of BG was most efficient in acidic solutions. Results show that the new porous oxides have large porous and high surface areas and high catalytic activity. A topotactic dehydration treatment greatly improves catalyst performance at various pHs. Stability and long term activity of porous materials (topo and non-topo) in photocatalysis reactions was also tested. These results suggest that the new materials can be used to efficiently purify contaminated water.« less

Effect of niobium content on the microstructure and thermal properties of fluorapatite glass-ceramics.

PubMed

Denry, I L; Holloway, J A; Nakkula, R J; Walters, J D

2005-10-01

Niobium oxide has been shown to improve biocompatibility and promote bioactivity. The purpose of this study was to evaluate the effect of niobium oxide additions on the microstructure and thermal properties of fluorapatite glass-ceramics for biomedical applications. Four glass-ceramic compositions with increasing amounts of niobium oxide from 0 to 5 wt % were prepared. The glass compositions were melted at 1,525 degrees C for 3 h, quenched, ground, melted again at 1,525 degrees C for 3 h and furnace cooled. The coefficient of thermal expansion was measured by dilatometry. The crystallization behavior was evaluated by differential thermal analysis. The nature of the crystalline phases was investigated by X-ray diffraction. The microstructure was studied by SEM. In addition, the cytotoxicity of the ceramics was evaluated according to the ASTM standard F895--84. The results from X-ray diffraction analyses showed that fluorapatite was the major crystalline phase in all glass-ceramics. Differential thermal analyses revealed that fluorapatite crystallization occurred between 800 and 934 degrees C depending on the composition. The coefficient of thermal expansion varied from 7.6 to 9.4 x 10(-6)/ degrees C. The microstructure after heat treatment at 975 degrees C for 30 min consisted of submicroscopic fluorapatite crystals (200--300 nm) for all niobium-containing glass-ceramics, whereas the niobium-free glass-ceramic contained needle-shaped fluorapatite crystals, 2 microm in length. None of the glass-ceramics tested exhibited any cytotoxic activity as tested by ASTM standard F895--84. (c) 2005 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 2005.

Redistribution of phosphorus during Ni0.9Pt0.1-based silicide formation on phosphorus implanted Si substrates

NASA Astrophysics Data System (ADS)

Lemang, M.; Rodriguez, Ph.; Nemouchi, F.; Juhel, M.; Grégoire, M.; Mangelinck, D.

2018-02-01

Phosphorus diffusion and its distribution during the solid-state reactions between Ni0.9Pt0.1 and implanted Si substrates are studied. Silicidation is achieved through a first rapid thermal annealing followed by a selective etching and a direct surface annealing. The redistribution of phosphorus in silicide layers is investigated after the first annealing for different temperatures and after the second annealing. Phosphorus concentration profiles obtained thanks to time of flight secondary ion mass spectrometry and atom probe tomography characterizations for partial and total reactions of the deposited 7 nm thick Ni0.9Pt0.1 film are presented. Phosphorus segregation is observed at the Ni0.9Pt0.1 surface and at Ni2Si interfaces during Ni2Si formation and at the NiSi surface and the NiSi/Si interface after NiSi formation. The phosphorus is evidenced in low concentrations in the Ni2Si and NiSi layers. Once NiSi is formed, a bump in the phosphorus concentration is highlighted in the NiSi layer before the NiSi/Si interface. Based on these profiles, a model for the phosphorus redistribution is proposed to match this bump to the former Ni2Si/Si interface. It also aims to bind the phosphorus segregation and its low concentration in different silicides to a low solubility of phosphorus in Ni2Si and in NiSi and a fast diffusion of phosphorus at their grain boundaries. This model is also substantiated by a simulation using a finite difference method in one dimension.

Interaction transfer of silicon atoms forming Co silicide for Co/√(3)×√(3)R30°-Ag/Si(111) and related magnetic properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Cheng-Hsun-Tony; Fu, Tsu-Yi; Tsay, Jyh-Shen, E-mail: jstsay@phy.ntnu.edu.tw

Combined scanning tunneling microscopy, Auger electron spectroscopy, and surface magneto-optic Kerr effect studies were employed to study the microscopic structures and magnetic properties for ultrathin Co/√(3)×√(3)R30°-Ag/Si(111). As the annealing temperature increases, the upward diffusion of Si atoms and formation of Co silicides occurs at temperature above 400 K. Below 600 K, the √(3)×√(3)R30°-Ag/Si(111) surface structure persists. We propose an interaction transferring mechanism of Si atoms across the √(3)×√(3)R30°-Ag layer. The upward transferred Si atoms react with Co atoms to form Co silicide. The step height across the edge of the island, a separation of 0.75 nm from the analysis of the 2 × 2 structure,more » and the calculations of the normalized Auger signal serve as strong evidences for the formation of CoSi{sub 2} at the interface. The interaction transferring mechanism for Si atoms enhances the possibility of interactions between Co and Si atoms. The smoothness of the surface is advantage for that the easy axis of magnetization for Co/√(3)×√(3)R30°-Ag/Si(111) is in the surface plane. This provides a possible way of growing flat magnetic layers on silicon substrate with controllable silicide formation and shows potential applications in spintronics devices.« less

Nanopatterning dynamics on Si(100) during oblique 40-keV Ar+ erosion with metal codeposition: Morphological and compositional correlation

NASA Astrophysics Data System (ADS)

Redondo-Cubero, A.; Gago, R.; Palomares, F. J.; Mücklich, A.; Vinnichenko, M.; Vázquez, L.

2012-08-01

The formation and dynamics of nanopatterns produced on Si(100) surfaces by 40-keV Ar+ oblique (α = 60°) bombardment with concurrent Fe codeposition have been studied. Morphological and chemical analysis has been performed by ex situ atomic force microscopy, Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, and scanning and transmission electron microscopies. During irradiation, Fe atoms incorporated into the target surface react with Si to form silicides, a process enhanced at this medium-ion energy range. The silicides segregate at the nanoscale from the early irradiation stages. As the irradiation proceeds, a ripple pattern is formed without any correlation with silicide segregation. From the comparison with the pattern dynamics reported previously for metal-free conditions, it is demonstrated that the metal incorporation alters both the pattern dynamics and the morphology. Although the pattern formation and dynamics are delayed for decreasing metal content, once ripples emerge, the same qualitative pattern of morphological evolution is observed for different metal content, resulting in an asymptotic saw-tooth-like facetted surface pattern. Despite the medium ion energy employed, the nanopatterning process with concurrent Fe deposition can be explained by those mechanisms proposed for low-ion energy irradiations such as shadowing, height fluctuations, silicide formation and segregation, ensuing composition dependent sputter rate, and ion sculpting effects. In particular, the interplay between the ion irradiation and metal flux geometries, differences in sputtering rates, and the surface pattern morphology produces a dynamic compositional patterning correlated with the evolving morphological one.

Surface polishing of niobium for superconducting radio frequency (SRF) cavity applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Liang

2014-08-01

Niobium cavities are important components in modern particle accelerators based on superconducting radio frequency (SRF) technology. The interior of SRF cavities are cleaned and polished in order to produce high accelerating field and low power dissipation on the cavity wall. Current polishing methods, buffered chemical polishing (BCP) and electro-polishing (EP), have their advantages and limitations. We seek to improve current methods and explore laser polishing (LP) as a greener alternative of chemical methods. The topography and removal rate of BCP at different conditions (duration, temperature, sample orientation, flow rate) was studied with optical microscopy, scanning electron microscopy (SEM), and electronmore » backscatter diffraction (EBSD). Differential etching on different crystal orientations is the main contributor to fine grain niobium BCP topography, with gas evolution playing a secondary role. The surface of single crystal and bi-crystal niobium is smooth even after heavy BCP. The topography of fine grain niobium depends on total removal. The removal rate increases with temperature and surface acid flow rate within the rage of 0~20 °C, with chemical reaction being the possible dominate rate control mechanism. Surface flow helps to regulate temperature and avoid gas accumulation on the surface. The effect of surface flow rate on niobium EP was studied with optical microscopy, atomic force microscopy (AFM), and power spectral density (PSD) analysis. Within the range of 0~3.7 cm/s, no significant difference was found on the removal rate and the macro roughness. Possible improvement on the micro roughness with increased surface flow rate was observed. The effect of fluence and pulse accumulation on niobium topography during LP was studied with optical microscopy, SEM, AFM, and PSD analysis. Polishing on micro scale was achieved within fluence range of 0.57~0.90 J/cm2, with pulse accumulation adjusted accordingly. Larger area treatment was proved possible by overlapping laser tracks at proper ratio. Comparison of topography and PSD indicates that LP smooths the surface in a way similar to EP. The optimized LP parameters were applied to different types of niobium surfaces representing different stages in cavity fabrication. LP reduces the sharpness on rough surfaces effectively, while doing no harm to smooth surfaces. Secondary ion mass spectrometer (SIMS) analysis showed that LP reduces the oxide layer slightly and no contamination occurred from LP. EBSD showed no significant change on crystal structure after LP.« less

Twisting phonons in complex crystals with quasi-one-dimensional substructures [Twisting Phonons in Higher Manganese Silicides with a Complex Nowotny Chimney Ladder Structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abernathy, Douglas L.; Ma, Jie; Yan, Jiaqiang

A variety of crystals contain quasi-one-dimensional substructures, which yield distinctive electronic, spintronic, optical and thermoelectric properties. There is a lack of understanding of the lattice dynamics that influences the properties of such complex crystals. Here we employ inelastic neutron scatting measurements and density functional theory calculations to show that numerous low-energy optical vibrational modes exist in higher manganese silicides, an example of such crystals. These optical modes, including unusually low-frequency twisting motions of the Si ladders inside the Mn chimneys, provide a large phase space for scattering acoustic phonons. A hybrid phonon and diffuson model is proposed to explain themore » low and anisotropic thermal conductivity of higher manganese silicides and to evaluate nanostructuring as an approach to further suppress the thermal conductivity and enhance the thermoelectric energy conversion efficiency. This discovery offers new insights into the structure-property relationships of a broad class of materials with quasi-one-dimensional substructures for various applications.« less

Iron silicides at pressures of the Earth's inner core

NASA Astrophysics Data System (ADS)

Zhang, Feiwu; Oganov, Artem R.

2010-01-01

The Earth's core is expected to contain around 10 wt % light elements (S, Si, O, possibly C, H, etc.) alloyed with Fe and Ni. Very little is known about these alloys at pressures and temperatures of the core. Here, using the evolutionary crystal structure prediction methodology, we investigate Fe-Si compounds at pressures of up to 400 GPa, i.e. covering the pressure range of the Earth's core. Evolutionary simulations correctly find that at atmospheric pressure the known non-trivial structure with P213 symmetry is stable, while at pressures above 20 GPa the CsCl-type structure is stable. We show that among the possible Fe silicides (Fe3Si, Fe2Si, Fe5Si3, FeSi, FeSi2 and FeSi3) only FeSi with CsCl-type structure is thermodynamically stable at core pressures, while the other silicides are unstable to decomposition into Fe + FeSi or FeSi + Si. This is consistent with previous works and suggests that Si impurities contribute to stabilization of the body-centered cubic phase of Fe in the inner core.

Influence of Powder Metallurgical Processing Routes on Phase Formations in a Multicomponent NbSi-Alloy

NASA Astrophysics Data System (ADS)

Seemüller, C.; Hartwig, T.; Mulser, M.; Adkins, N.; Wickins, M.; Heilmaier, M.

2014-09-01

Refractory metal silicide composites on the basis of Nbss-Nb5Si3 have been investigated as potential alternatives for nickel-base superalloys for years because of their low densities and good high-temperature strengths. NbSi-based composites are typically produced by arc-melting or casting. Samples in this study, however, were produced by powder metallurgy because of the potential for near net-shape component fabrication with very homogeneous microstructures. Either gas atomized powder or high-energy mechanically alloyed elemental powders were compacted by powder injection molding or hot isostatic pressing. Heat treatments were applied for phase stability evaluation. Slight compositional changes (oxygen, nitrogen, or iron) introduced by the processing route, i.e., powder production and consolidation, can affect phase formations and phase transitions during the process. Special focus is put on the distinction between different silicides (Nb5Si3 and Nb3Si) and silicide modifications (α-, β-, and γ-Nb5Si3), respectively. These were evaluated by x-ray diffraction and energy-dispersive spectroscopy measurements with the additional inclusion of thermodynamic calculations using the calculated phase diagram method.

Development of Coatings for Tantalum Alloy Nozzle Vanes

NASA Technical Reports Server (NTRS)

Stetson, A. R.; Wimber, R. T.

1967-01-01

A group of silicide coatings developed for the T222 tantalum-base alloy have afforded over 600 hours of protection at 1600 and 2400 F during cyclic exposure in air. These coatings were applied in two steps. A modifier alloy was applied by slurry techniques and was sintered in vacuum prior to siliciding by pack cementation in argon. Application of the modifier alloy by pack cementation was found to be much less effective. The addition of titanium and vanadium to molybdenum and tungsten yielded beneficial modifier alloys, whereas the addition of chromium showed no improvement. After siliciding, the 15Ti- 35W-15V-35Mo modifier alloy exhibited the best performance; one sample survived 1064 hours of oxidation at 2400 F. This same coating was the only coating to reproducibly provide 600 hours of protection at both 1600 and 2400 F; in the second and third of three experiments, involving oxidation of three to five specimens at each temperature in each experiment, no failures were observed in 600 hours of testing. The slurry coatings were also shown to protect the Cb752 and D43 columbium-base alloys.

Oxide mediated liquid-solid growth of high aspect ratio aligned gold silicide nanowires on Si(110) substrates.

PubMed

Bhatta, Umananda M; Rath, Ashutosh; Dash, Jatis K; Ghatak, Jay; Yi-Feng, Lai; Liu, Chuan-Pu; Satyam, P V

2009-11-18

Silicon nanowires grown using the vapor-liquid-solid method are promising candidates for nanoelectronics applications. The nanowires grow from an Au-Si catalyst during silicon chemical vapor deposition. In this paper, the effect of temperature, oxide at the interface and substrate orientation on the nucleation and growth kinetics during formation of nanogold silicide structures is explained using an oxide mediated liquid-solid growth mechanism. Using real time in situ high temperature transmission electron microscopy (with 40 ms time resolution), we show the formation of high aspect ratio ( approximately 15.0) aligned gold silicide nanorods in the presence of native oxide at the interface during in situ annealing of gold thin films on Si(110) substrates. Steps observed in the growth rate and real time electron diffraction show the existence of liquid Au-Si nano-alloy structures on the surface besides the un-reacted gold nanostructures. These results might enable us to engineer the growth of nanowires and similar structures with an Au-Si alloy as a catalyst.

Twisting phonons in complex crystals with quasi-one-dimensional substructures [Twisting Phonons in Higher Manganese Silicides with a Complex Nowotny Chimney Ladder Structure

DOE PAGES

Abernathy, Douglas L.; Ma, Jie; Yan, Jiaqiang; ...

2015-04-15

A variety of crystals contain quasi-one-dimensional substructures, which yield distinctive electronic, spintronic, optical and thermoelectric properties. There is a lack of understanding of the lattice dynamics that influences the properties of such complex crystals. Here we employ inelastic neutron scatting measurements and density functional theory calculations to show that numerous low-energy optical vibrational modes exist in higher manganese silicides, an example of such crystals. These optical modes, including unusually low-frequency twisting motions of the Si ladders inside the Mn chimneys, provide a large phase space for scattering acoustic phonons. A hybrid phonon and diffuson model is proposed to explain themore » low and anisotropic thermal conductivity of higher manganese silicides and to evaluate nanostructuring as an approach to further suppress the thermal conductivity and enhance the thermoelectric energy conversion efficiency. This discovery offers new insights into the structure-property relationships of a broad class of materials with quasi-one-dimensional substructures for various applications.« less

Carrier-transport mechanism of Er-silicide Schottky contacts to strained-silicon-on-insulator and silicon-on-insulator.

PubMed

Jyothi, I; Janardhanam, V; Kang, Min-Sung; Yun, Hyung-Joong; Lee, Jouhahn; Choi, Chel-Jong

2014-11-01

The current-voltage characteristics and the carrier-transport mechanism of the Er-silicide (ErSi1.7) Schottky contacts to strained-silicon-on-insulator (sSOI) and silicon-on-insulator (SOI) were investigated. Barrier heights of 0.74 eV and 0.82 eV were obtained for the sSOI and SOI structures, respectively. The barrier height of the sSOI structure was observed to be lower than that of the SoI structure despite the formation of a Schottky contact using the same metal silicide. The sSOI structure exhibited better rectification and higher current level than the SOI structure, which could be associated with a reduction in the band gap of Si caused by strain. The generation-recombination mechanism was found to be dominant in the forward bias for both structures. Carrier generation along with the Poole-Frenkel mechanism dominated the reverse-biased current in the SOI structure. The saturation tendency of the reverse leakage current in the sSOI structure could be attributed to strain-induced defects at the interface in non-lattice-matched structures.

Nucleation and atomic layer reaction in nickel silicide for defect-engineered Si nanochannels.

PubMed

Tang, Wei; Picraux, S Tom; Huang, Jian Yu; Gusak, Andriy M; Tu, King-Ning; Dayeh, Shadi A

2013-06-12

At the nanoscale, defects can significantly impact phase transformation processes and change materials properties. The material nickel silicide has been the industry standard electrical contact of silicon microelectronics for decades and is a rich platform for scientific innovation at the conjunction of materials and electronics. Its formation in nanoscale silicon devices that employ high levels of strain, intentional, and unintentional twins or grain boundaries can be dramatically different from the commonly conceived bulk processes. Here, using in situ high-resolution transmission electron microscopy (HRTEM), we capture single events during heterogeneous nucleation and atomic layer reaction of nickel silicide at various crystalline boundaries in Si nanochannels for the first time. We show through systematic experiments and analytical modeling that unlike other typical face-centered cubic materials such as copper or silicon the twin defects in NiSi2 have high interfacial energies. We observe that these twin defects dramatically change the behavior of new phase nucleation and can have direct implications for ultrascaled devices that are prone to defects or may utilize them to improve device performance.

Superconductors

DOEpatents

Newkirk, Lawrence R.; Valencia, Flavio A.

1977-02-01

The structural quality of niobium germanide as a high-transition-temperature superconducting material is substantially improved by the presence of about 5 at. % oxygen. Niobium germanide having this oxygen content may readily be prepared as a bulk coating bonded to a metallic substrate by chemical vapor deposition techniques.

Semimicrodetermination of tantalum with selenous acid

USGS Publications Warehouse

Grimaldi, F.S.; Schnepfe, M.M.

1958-01-01

Tantalum is separated and determined gravimetrically by precipitation with selenous acid from a highly acidic solution containing oxalic and tartaric acids. The method is selective for the determination of up to 30 mg. of tantalum pentoxide, and tolerates relatively large amounts of scandium, yttrium, cerium, titanium, zirconium, thorium, vanadium, niobium, molybdenum, tungsten, uranium, iron, aluminum, gallium, tin, lead, antimony, and bismuth. The separation of tantalum from niobium and titanium is not strictly quantitative, and correction is made colorimetrically for the small amounts of niobium and titanium co-precipitating with the tantalum. The method was applied to the determination of tantalum in tantaloniobate ores.

Nano-patterned superconducting surface for high quantum efficiency cathode

DOEpatents

Hannon, Fay; Musumeci, Pietro

2017-03-07

A method for providing a superconducting surface on a laser-driven niobium cathode in order to increase the effective quantum efficiency. The enhanced surface increases the effective quantum efficiency by improving the laser absorption of the surface and enhancing the local electric field. The surface preparation method makes feasible the construction of superconducting radio frequency injectors with niobium as the photocathode. An array of nano-structures are provided on a flat surface of niobium. The nano-structures are dimensionally tailored to interact with a laser of specific wavelength to thereby increase the electron yield of the surface.

Recent advances in nanostructured Nb-based oxides for electrochemical energy storage

NASA Astrophysics Data System (ADS)

Yan, Litao; Rui, Xianhong; Chen, Gen; Xu, Weichuan; Zou, Guifu; Luo, Hongmei

2016-04-01

For the past five years, nanostructured niobium-based oxides have emerged as one of the most prominent materials for batteries, supercapacitors, and fuel cell technologies, for instance, TiNb2O7 as an anode for lithium-ion batteries (LIBs), Nb2O5 as an electrode for supercapacitors (SCs), and niobium-based oxides as chemically stable electrochemical supports for fuel cells. Their high potential window can prevent the formation of lithium dendrites, and their rich redox chemistry (Nb5+/Nb4+, Nb4+/Nb3+) makes them very promising electrode materials. Their unique chemical stability under acid conditions is favorable for practical fuel-cell operation. In this review, we summarized recent progress made concerning the use of niobium-based oxides as electrodes for batteries (LIBs, sodium-ion batteries (SIBs), and vanadium redox flow batteries (VRBs)), SCs, and fuel cell applications. Moreover, crystal structures, charge storage mechanisms in different crystal structures, and electrochemical performances in terms of the specific capacitance/capacity, rate capability, and cycling stability of niobium-based oxides are discussed. Insights into the future research and development of niobium-based oxide compounds for next-generation electrochemical devices are also presented. We believe that this review will be beneficial for research scientists and graduate students who are searching for promising electrode materials for batteries, SCs, and fuel cells.

Recent advances in nanostructured Nb-based oxides for electrochemical energy storage.

PubMed

Yan, Litao; Rui, Xianhong; Chen, Gen; Xu, Weichuan; Zou, Guifu; Luo, Hongmei

2016-04-28

For the past five years, nanostructured niobium-based oxides have emerged as one of the most prominent materials for batteries, supercapacitors, and fuel cell technologies, for instance, TiNb2O7 as an anode for lithium-ion batteries (LIBs), Nb2O5 as an electrode for supercapacitors (SCs), and niobium-based oxides as chemically stable electrochemical supports for fuel cells. Their high potential window can prevent the formation of lithium dendrites, and their rich redox chemistry (Nb(5+)/Nb(4+), Nb(4+)/Nb(3+)) makes them very promising electrode materials. Their unique chemical stability under acid conditions is favorable for practical fuel-cell operation. In this review, we summarized recent progress made concerning the use of niobium-based oxides as electrodes for batteries (LIBs, sodium-ion batteries (SIBs), and vanadium redox flow batteries (VRBs)), SCs, and fuel cell applications. Moreover, crystal structures, charge storage mechanisms in different crystal structures, and electrochemical performances in terms of the specific capacitance/capacity, rate capability, and cycling stability of niobium-based oxides are discussed. Insights into the future research and development of niobium-based oxide compounds for next-generation electrochemical devices are also presented. We believe that this review will be beneficial for research scientists and graduate students who are searching for promising electrode materials for batteries, SCs, and fuel cells.

Improved the microstructures and properties of M3:2 high-speed steel by spray forming and niobium alloying

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, L.; Hou, L.G., E-mail: lghou@skl.ustb.edu.cn; Zhang, J.X.

The microstructures and properties of spray formed (SF) high-speed steels (HSSs) with or without niobium (Nb) addition were studied. Particular emphasis was placed on the effect of Nb on the solidification microstructures, decomposition of M{sub 2}C carbides, thermal stability and mechanical properties. The results show that spray forming can refine the cell size of eutectic carbides due to the rapid cooling effect during atomization. With Nb addition, further refinement of the eutectic carbides and primary austenite grains are obtained. Moreover, the Nb addition can accelerate the decomposition of M{sub 2}C carbides and increase the thermal stability of high-speed steel, andmore » also can improve the hardness and bending strength with slightly decrease the impact toughness. The high-speed steel made by spray forming and Nb alloying can give a better tool performance compared with powder metallurgy M3:2 and commercial AISI M2 high-speed steels. - Highlights: • Spray forming can effectively refine the microstructure of M3:2 steel. • Niobium accelerates the decomposition of M{sub 2}C carbides. • Niobium increases the hardness and bending strength of spray formed M3:2 steel. • Spray-formed niobium-containing M3:2 steel has the best tool performance.« less

Unprecedented quality factors at accelerating gradients up to 45 MVm -1 in niobium superconducting resonators via low temperature nitrogen infusion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grassellino, A.; Romanenko, A.; Trenikhina, Y.

We report the finding of new surface treatments that permit to manipulate the niobium resonator nitrogen content in the first few nanometers in a controlled way, and the resonator fundamental Mattis-Bardeen surface resistance and residual resistance accordingly. In particular, we find surface infusion conditions that systematically a) increase the quality factor of these 1.3 GHz superconducting radio frequency (SRF) bulk niobium resonators, up to very high gradients; b) increase the achievable accelerating gradient of the cavity compared to its own baseline with state-of-the-art surface processing. Cavities subject to the new surface process have larger than two times the state ofmore » the art Q at 2K for accelerating fields > 35 MV/m. Moreover, very high accelerating gradients ~ 45 MV/m are repeatedly reached, which correspond to peak magnetic surface fields of 190 mT, among the highest measured for bulk niobium cavities. These findings open the opportunity to tailor the surface impurity content distribution to maximize performance in Q and gradients, and have therefore very important implications on future performance and cost of SRF based accelerators. They also help deepen the understanding of the physics of the RF niobium cavity surface.« less

Unprecedented quality factors at accelerating gradients up to 45 MVm-1 in niobium superconducting resonators via low temperature nitrogen infusion

NASA Astrophysics Data System (ADS)

Grassellino, A.; Romanenko, A.; Trenikhina, Y.; Checchin, M.; Martinello, M.; Melnychuk, O. S.; Chandrasekaran, S.; Sergatskov, D. A.; Posen, S.; Crawford, A. C.; Aderhold, S.; Bice, D.

2017-09-01

We report the finding of new surface treatments that permits one to manipulate the niobium resonator nitrogen content in the first few nanometers in a controlled way, and the resonator fundamental Mattis-Bardeen surface resistance and residual resistance accordingly. In particular, we find surface ‘infusion’ conditions that systematically (a) increase the quality factor of these 1.3 GHz superconducting radio frequency (SRF) bulk niobium resonators, up to very high gradients; (b) increase the achievable accelerating gradient of the cavity compared to its own baseline with state-of-the-art surface processing. Cavities subject to the new surface process have more than two times the state-of-the-art Q at 2 K for accelerating fields >35 MVm-1. Moreover, very high accelerating gradients ˜45 MVm-1 are repeatedly reached, which correspond to peak magnetic surface fields of 190 mT, among the highest measured for bulk niobium cavities. These findings open the opportunity to tailor the surface impurity content distribution to maximize performance in Q and gradients, and have therefore very important implications on future performance and cost of SRF based accelerators. They also help deepen the understanding of the physics of the RF niobium cavity surface.

Effect of Chemical Composition on Susceptibility to Weld Solidification Cracking in Austenitic Weld Metal

NASA Astrophysics Data System (ADS)

Kadoi, Kota; Shinozaki, Kenji

2017-12-01

The influence of the chemical composition, especially the niobium content, chromium equivalent Creq, and nickel equivalent Nieq, on the weld solidification cracking susceptibility in the austenite single-phase region in the Schaeffler diagram was investigated. Specimens were fabricated using the hot-wire laser welding process with widely different compositions of Creq, Nieq, and niobium in the region. The distributions of the susceptibility, such as the crack length and brittle temperature range (BTR), in the Schaeffler diagram revealed a region with high susceptibility to solidification cracking. Addition of niobium enhanced the susceptibility and changed the distribution of the susceptibility in the diagram. The BTR distribution was in good agreement with the distribution of the temperature range of solidification (Δ T) calculated by solidification simulation based on Scheil model. Δ T increased with increasing content of alloying elements such as niobium. The distribution of Δ T was dependent on the type of alloying element owing to the change of the partitioning behavior. Thus, the solidification cracking susceptibility in the austenite single-phase region depends on whether the alloy contains elements. The distribution of the susceptibility in the region is controlled by the change in Δ T and the segregation behavior of niobium with the chemical composition.

Towards sustainable processing of columbite group minerals: elucidating the relation between dielectric properties and physico-chemical transformations in the mineral phase.

PubMed

Sanchez-Segado, Sergio; Monti, Tamara; Katrib, Juliano; Kingman, Samuel; Dodds, Chris; Jha, Animesh

2017-12-21

Current methodologies for the extraction of tantalum and niobium pose a serious threat to human beings and the environment due to the use of hydrofluoric acid (HF). Niobium and tantalum metal powders and pentoxides are widely used for energy efficient devices and components. However, the current processing methods for niobium and tantalum metals and oxides are energy inefficient. This dichotomy between materials use for energy applications and their inefficient processing is the main motivation for exploring a new methodology for the extraction of these two oxides, investigating the microwave absorption properties of the reaction products formed during the alkali roasting of niobium-tantalum bearing minerals with sodium bicarbonate. The experimental findings from dielectric measurement at elevated temperatures demonstrate an exponential increase in the values of the dielectric properties as a result of the formation of NaNbO 3 -NaTaO 3 solid solutions at temperatures above 700 °C. The investigation of the evolution of the dielectric properties during the roasting reaction is a key feature in underpinning the mechanism for designing a new microwave assisted high-temperature process for the selective separation of niobium and tantalum oxides from the remainder mineral crystalline lattice.

Niobium Solar Mobile Project — High Strength Niobium Microalloyed Steel as a Solution to Improve Electric Super Scooter and Motorcycle Performance

NASA Astrophysics Data System (ADS)

Richards, Terry; Kauppi, Erik; Flanagan, Lauren; Ribeio, Eduardo A. A. G.; Nogueira, Marcos A. Stuart; McCourtney, Ian

This paper presents the advantages of replacing mild steel with high strength niobium microalloyed steel in the structure of Electric Super Scooters, Electric Cargo Motorcycles and Solar Charging Stations. The Mini-Fleet-in-a-Box concept was developed by Current Motor to guarantee mobility, efficiency and solar generated electricity. With the adoption of niobium microalloyed high strength steel for more than 90% of the Super Scooter and Motorcycle structures, it was possible to redesign the frame, resulting in a 31% weight reduction and a very modern and functional body. Together with a new powertrain, these changes were responsible for increasing Motorcycle autonomy by more than 15%, depending on average speed. The new frame design reduced the number of high strain points in the frame, increasing the safety of the project. The Solar Charging Station was built using the container concept and designed with high strength niobium microalloyed steel, which resulted in a weight reduction of 25%. CBMM's facility in Araxá, Brazil was selected in the second half of 2013 as the demonstration site to test the efficiency of the Super Scooter and Solar Charging Station. Each Super Scooter has run more than 2,000 km maintenance-free with an autonomy of more than 100 km per charge.

Method of preparing high-temperature-stable thin-film resistors

DOEpatents

Raymond, L.S.

1980-11-12

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Ferromagnetic nickel silicide nanowires for isolating primary CD4+ T lymphocytes

NASA Astrophysics Data System (ADS)

Kim, Dong-Joo; Seol, Jin-Kyeong; Lee, Mi-Ri; Hyung, Jung-Hwan; Kim, Gil-Sung; Ohgai, Takeshi; Lee, Sang-Kwon

2012-04-01

Direct CD4+ T lymphocytes were separated from whole mouse splenocytes using 1-dimensional ferromagnetic nickel silicide nanowires (NiSi NWs). NiSi NWs were prepared by silver-assisted wet chemical etching of silicon and subsequent deposition and annealing of Ni. This method exhibits a separation efficiency of ˜93.5%, which is comparable to that of the state-of-the-art superparamagnetic bead-based cell capture (˜96.8%). Furthermore, this research shows potential for separation of other lymphocytes, B, natural killer and natural killer T cells, and even rare tumor cells simply by changing the biotin-conjugated antibodies.

Method of preparing high-temperature-stable thin-film resistors

DOEpatents

Raymond, Leonard S.

1983-01-01

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

DART model for irradiation-induced swelling of uranium silicide dispersion fuel elements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rest, J.; Hofman, G.L.

1999-04-01

Models for the interaction of uranium silicide dispersion fuels with an aluminum matrix, for the resultant reaction product swelling, and for the calculation of the stress gradient within the fuel particles are described within the context of DART fission-gas-induced swelling models. The effects of an aluminide shell on fuel particle swelling are evaluated. Validation of the model is demonstrated by comparing DART calculations with irradiation data for the swelling of U{sub 3}SiAl-Al and U{sub 3}Si{sub 2}-Al in variously designed dispersion fuel elements.

Carbon or boron modified titanium silicide

DOEpatents

Thom, A.J.; Akinc, M.

1998-07-14

A titanium silicide material based on Ti{sub 5}Si{sub 3} intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000 C. Boron is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end. 3 figs.

Carbon or boron modified titanium silicide

DOEpatents

Thom, A.J.; Akinc, M.

1997-12-02

A titanium silicide material based on Ti{sub 5}Si{sub 3} intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000 C. Boron is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end. 3 figs.

Carbon or boron modified titanium silicide

DOEpatents

Thom, Andrew J.; Akinc, Mufit

1996-12-03

A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000.degree. C. Boron is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end.

Controlling the width of self-assembled dysprosium silicide nanowires on the Si(001) surface.

PubMed

Cui, Y; Chung, J; Nogami, J

2012-02-01

We present STM data that show that it is possible to use a metal induced 2 × 7 reconstruction of Si(001) to narrow the width distribution of Dy silicide nanowires. This behavior is distinct from the effect of the 7 × 7 reconstruction on the Si(111) surface, where the 7 × 7 serves as a static template and the deposited metal avoids the unit cell boundaries on the substrate. In this case, the 2 × 7 is a dynamic template, and the nanowires nucleate at anti-phase boundaries between 2 × 7 reconstruction domains.

Carbon or boron modified titanium silicide

DOEpatents

Thom, Andrew J.; Akinc, Mufit

1997-12-02

A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000.degree. C. Boron is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end.

Carbon or boron modified titanium silicide

DOEpatents

Thom, A.J.; Akinc, M.

1996-12-03

A titanium silicide material based on Ti{sub 5}Si{sub 3} intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000 C. Boron is added to a Ti{sub 5}Si{sub 3} base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end. 3 figs.

Infrared photodetectors with tailorable response due to resonant plasmon absorption in epitaxial silicide particles embedded in silicon

NASA Technical Reports Server (NTRS)

Fathauer, R. W.; Dejewski, S. M.; George, T.; Jones, E. W.; Krabach, T. N.; Ksendzov, A.

1993-01-01

Tailorable infrared photoresponse in the 1-2 micron range are demonstrated in a device incorporating electrically floating metal silicide particles. Photons absorbed by excitation of the metallic-particle surface plasmon are shown to contribute to the photoresponse. Quantum efficiencies of roughly 0.2 percent are measured at 77 K, with dark currents of less than 2 nA/sq cm at a reverse bias of 1 V and detectivities of 4 x 10 exp 9 - 8 x 10 exp 9 cm sq rt Hz/W are obtained.

Carbon or boron modified titanium silicide

DOEpatents

Thom, Andrew J.; Akinc, Mufit

1998-07-14

A titanium silicide material based on Ti.sub.5 Si.sub.3 intermetallic compound exhibits substantially improved oxidative stability at elevated temperatures. In particular, carbon is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.6 weight % C) effective to impart substantially improved oxidative stability at elevated temperatures, such as about 1000.degree. C. Boron is added to a Ti.sub.5 Si.sub.3 base material in an amount (e.g. about 0.3 to about 3.3 weight % B) to this same end.

Structural phase transitions in niobium oxide nanocrystals

NASA Astrophysics Data System (ADS)

Yuvakkumar, R.; Hong, Sun Ig

2015-09-01

Niobium oxide nanocrystals were successfully synthesized employing the green synthesis method. Phase formation, microstructure and compositional properties of 1, 4 and 7 days incubation treated samples after calcinations at 450 °C were examined using X-ray diffraction, Raman, photoluminescence (PL), infrared, X-ray photoelectron spectra and transmission electron microscopic characterizations. It was observed that phase formation of Nb2O5 nanocrystals was dependent upon the incubation period required to form stable metal oxides. The characteristic results clearly revealed that with increasing incubation and aging, the transformation of cubic, orthorhombic and monoclinic phases were observed. The uniform heating at room temperature (32 °C) and the ligation of niobium atoms due to higher phenolic constituents of utilized rambutan during aging processing plays a vital role in structural phase transitions in niobium oxide nanocrystals. The defects over a period of incubation and the intensities of the PL spectra changing over a period of aging were related to the amount of the defects induced by the phase transition.

Accurate X-ray diffraction studies of KTiOPO{sub 4} single crystals doped with niobium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Novikova, N. E., E-mail: natnov@ns.crys.ras.ru; Sorokina, N. I.; Alekseeva, O. A.

2017-01-15

Single crystals of potassium titanyl phosphate doped with 4% of niobium (КТР:4%Nb) and 6% of niobium (KTP:6%Nb) are studied by accurate X-ray diffraction at room temperature. The niobium atoms are localized near the Ti1 and Ti2 atomic positions, and their positions are for the first time refined independent of the titanium atomic positions. Maps of difference electron density in the vicinity of K1 and K2 atomic positions are analyzed. It is found that in the structure of crystal КТР:4%Nb, additional positions of K atoms are located farther from the main positions and from each other than in КТР and KTP:6%Nbmore » crystals. The nonuniform distribution of electron density found in the channels of the КТР:4%Nb structure is responsible for ~20% increase in the signal of second harmonic generation.« less

SRF MATERIALS OTHER THAN NIOBIUM

DOE Office of Scientific and Technical Information (OSTI.GOV)

Valente, Anne-Marie

2008-02-12

For the past three decades, bulk niobium has been the material of choice for SRF cavity applications. Alternative materials, mainly Nb compounds and A15 compounds have been investigated with moderate effort in the past. In the recent years, RF cavity performance has approached the theoretical limit for bulk niobium. For further improvement of RF cavity performance for future accelerator projects, research interest is renewed towards alternative materials to niobium. A few laboratories around the world are now investigating superconductors with higher transition temperature Tc for application to SRF cavities. This paper gives an overview of the results obtained and challengesmore » encountered for Nb compounds and A15 compounds, as well as for MgB2, for SRF cavity applications. An interesting alternative has been recently proposed by Alex Gurevich with the Superconductor-Insulator-Superconductor multilayer approach. This could potentially lead to further improvement in RF cavity performance using the benefit of the higher critical field Hc of higher-Tc superconductors without being limited with their lower Hc1.« less

Improved superconducting magnet wire

DOEpatents

Schuller, I.K.; Ketterson, J.B.

1983-08-16

This invention is directed to a superconducting tape or wire composed of alternating layers of copper and a niobium-containing superconductor such as niobium of NbTi, Nb/sub 3/Sn or Nb/sub 3/Ge. In general, each layer of the niobium-containing superconductor has a thickness in the range of about 0.05 to 1.5 times its coherence length (which for Nb/sub 3/Si is 41 A) with each copper layer having a thickness in the range of about 170 to 600 A. With the use of very thin layers of the niobium composition having a thickness within the desired range, the critical field (H/sub c/) may be increased by factors of 2 to 4. Also, the thin layers of the superconductor permit the resulting tape or wire to exhibit suitable ductility for winding on a magnet core. These compositions are also characterized by relatively high values of critical temperature and therefore will exhibit a combination of useful properties as superconductors.

A summary of niobium and rare earth localities from Ha'il and other areas in western Saudi Arabia: a preliminary study

USGS Publications Warehouse

Matzko, John J.; Naqvi, Mohammed Ibne

1978-01-01

Investigations in 1965 located veins containing radioactive material in the Halaban Group on the east side of a granite pluton at Jabal Aja near Ha'il. Later study extended the known area of radioactivity to a total length of about 30 km. Mineralogic studies indicated that the samples were low in uranium and that the radioactivity was due principally to thorium in niobium-bearing minerals. Two samples were reexamined to identify the sources of radioactivity, but X-ray and alpha plate studies did not reveal the radioactive minerals, even though uranium mineralization was indicated by the alpha plates. Further sampling is suggested to isolate the sources of radioactivity. This study indicates that niobium occurrences are related to alkaline intrusives in many areas of western Saudi Arabia. These areas should be investigated for their possible niobium and rare earth contents; their uranium content is apparently too low to be of economic interest.

Semimicrodetermination of combined tantalum and niobium with selenous acid

USGS Publications Warehouse

Grimaldi, F.S.; Schnepfe, M.

1959-01-01

Tantalum and niobium are separated and determined gravimetrically by precipitation with selenous acid from highly acidic solutions in the absence of complexing agents. Hydrogen peroxide is used in the preparation of the solution and later catalytically destroyed during digestion of the precipitate. From 0.2 to 30 mg., separately or in mixtures, of niobium or tantalum pentoxide can be separated from mixtures containing 100 mg. each of the oxides of scandium, yttrium, cerium, vanadium, molybdenum, iron, aluminum, tin, lead, and bismuth with a single precipitation; and from 30 mg. of titanium dioxide, and 50 mg. each of the oxides of antimony and thorium, when present separately, with three precipitations. At least 50 mg. of uranium(VI) oxide can be separated with a single precipitation when present alone; otherwise, three precipitations may be needed. Zirconium does not interfere when the tantalum and niobium contents of the sample are small, but in general, zirconium as well as tungsten interfere. The method is applied to the determination of the earth acids in tantaloniobate ores.

Field dependent surface resistance of niobium on copper cavities

NASA Astrophysics Data System (ADS)

Junginger, T.

2015-07-01

The surface resistance RS of superconducting cavities prepared by sputter coating a niobium film on a copper substrate increases significantly stronger with the applied rf field compared to cavities of bulk material. A possible cause is that the thermal boundary resistance between the copper substrate and the niobium film induces heating of the inner cavity wall, resulting in a higher RS. Introducing helium gas in the cavity, and measuring its pressure as a function of applied field allowed to conclude that the inner surface of the cavity is heated up by less than 120 mK when RS increases with Eacc by 100 n Ω . This is more than one order of magnitude less than what one would expect from global heating. Additionally, the effects of cooldown speed and low temperature baking have been investigated in the framework of these experiments. It is shown that for the current state of the art niobium on copper cavities there is only a detrimental effect of low temperature baking. A fast cooldown results in a lowered RS.

The oxidation of TaBe sub 12 and NbBe sub 12 coatings on niobium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Courtright, E.L.

1990-01-01

The oxidation behavior of tantalum and niobium beryllide coatings on niobium were evaluated. Intermetallic bond layers consisting of Ir{sub 3}Ta and Ir{sub 3}Nb were used to butter the large thermal expansion mismatch between the beryllide coatings and underlying niobium substrate. All coatings were applied by Triode Sputtering except for a final environmental protection layer of stabilized zirconia deposited by RF Diode using a ceramic target. Severe delamination and spalling occurred during cyclic oxidation exposure, even at temperatures as low as 925{degrees}C, indicating that the bond layer did not prevent the differential expansion stresses from reaching the delamination failure threshold, particularlymore » at the edges and corners. Hot pressed samples of the two beryllide compounds were also exposed to a similar cyclic oxidation history, but, in contrast to the coatings, exhibited excellent oxidation resistance to temperatures as high as 1370{degrees}C. 9 refs., 8 figs., 1 tab.« less

Effect of low temperature baking on the RF properties of niobium superconducting cavities for particle accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gianluigi Ciovati

Radio-frequency superconducting (SRF) cavities are widely used to accelerate a charged particle beam in particle accelerators. The performance of SRF cavities made of bulk niobium has significantly improved over the last ten years and is approaching the theoretical limit for niobium. Nevertheless, RF tests of niobium cavities are still showing some ''anomalous'' losses that require a better understanding in order to reliably obtain better performance. These losses are characterized by a marked dependence of the surface resistance on the surface electromagnetic field and can be detected by measuring the quality factor of the resonator as a function of the peakmore » surface field. A low temperature (100 C-150 C) ''in situ'' bake under ultra-high vacuum has been successfully applied as final preparation of niobium RF cavities by several laboratories over the last few years. The benefits reported consist mainly of an improvement of the cavity quality factor at low field and a recovery from ''anomalous'' losses (so-called ''Q-drop'') without field emission at higher field. A series of experiments with a CEBAF single-cell cavity have been carried out at Jefferson Lab to carefully investigate the effect of baking at progressively higher temperatures for a fixed time on all the relevant material parameters. Measurements of the cavity quality factor in the temperature range 1.37 K-280 K and resonant frequency shift between 6 K-9.3 K provide information about the surface resistance, energy gap, penetration depth and mean free path. The experimental data have been analyzed with the complete BCS theory of superconductivity. The hydrogen content of small niobium samples inserted in the cavity during its surface preparation was analyzed with Nuclear Reaction Analysis (NRA). The single-cell cavity has been tested at three different temperatures before and after baking to gain some insight on thermal conductivity and Kapitza resistance and the data are compared with different models. This paper describes the results of these experiments and comments on existing models to explain the effect of baking on the performance of niobium RF cavities.« less

X-ray photoemission spectromicroscopy of titanium silicide formation in patterned microstructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, S.; Solak, H.; Cerrina, F.

1997-04-01

Titanium silicide has the lowest resistivity of all the refractory metal silicides and has good thermal stability as well as excellent compatibility with Al metallization. It is used as an intermediate buffer layer between W vias and the Si substrate to provide good electrical contact in ULSI technology, whose submicron patterned features form the basis of the integrated circuits of today and tomorrow, in the self aligned silicide (salicide) formation process. TiSi{sub 2} exists in two phases: a metastable C49 base-centered orthorhombic phase with specific resistivity of 60-90 {mu}{Omega}-cm that is formed at a lower temperature (formation anneal) and themore » stable 12-15 {mu}{Omega}-cm resistivity face-centered orthorhombic C54 phase into which C49 is transformed with a higher temperature (conversion anneal) step. C54 is clearly the target for low resistivity VLSI interconnects. However, it has been observed that when dimensions shrink below 1/mic (or when the Ti thickness drops below several hundred angstroms), the transformation of C49 into C54 is inhibited and agglomeration often occurs in fine lines at high temperatures. This results in a rise in resistivity due to incomplete transformation to C54 and because of discontinuities in the interconnect line resulting from agglomeration. Spectromicroscopy is an appropriate tool to study the evolution of the TiSi2 formation process because of its high resolution chemical imaging ability which can detect bonding changes even in the absence of changes in the relative amounts of species and because of the capability of studying thick {open_quotes}as is{close_quotes} industrial samples.« less

Silicon-germanium and platinum silicide nanostructures for silicon based photonics

NASA Astrophysics Data System (ADS)

Storozhevykh, M. S.; Dubkov, V. P.; Arapkina, L. V.; Chizh, K. V.; Mironov, S. A.; Chapnin, V. A.; Yuryev, V. A.

2017-05-01

This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being deposited from a molecular beam at room temperature on the Si(001) surface, forms a thin granular film composed of Ge particles with sizes of a few nanometers. A characteristic feature of these films is that they demonstrate signs of the 2 x 1 structure in their RHEED patterns. After short-term annealing at 600°C under the closed system conditions, the granular films reconstruct to heterostructures consisting of a Ge wetting layer and oval clusters of Ge. A mixed type c(4x2) + p(2x2) reconstruction typical to the low-temperature MBE (Tgr < 600°C) forms on the wetting layer. Long-term annealing of granular films at the same conditions results in formation of c(4x2)-reconstructed wetting layer typical to high-temperature MBE (Tgr < 600°C) and huge clusters of Ge. The other type of the studied nanostructures is based on Pt silicides. This class of materials is one of the friendliest to silicon technology. But as silicide film thickness reaches a few nanometers, low resistivity becomes of primary importance. Pt3Si has the lowest sheet resistance among the Pt silicides. However, the development of a process of thin Pt3Si films formation is a challenging task. This paper describes formation of a thin Pt3Si/Pt2Si structures at room temperature on poly-Si films. Special attention is paid upon formation of poly-Si and amorphous Si films on Si3N4 substrates at low temperatures.

Study of ion beam sputtered Fe/Si interfaces as a function of Si layer thickness

NASA Astrophysics Data System (ADS)

Kumar, Anil; Brajpuriya, Ranjeet; Singh, Priti

2018-01-01

The exchange interaction in metal/semiconductor interfaces is far from being completely understood. Therefore, in this paper, we have investigated the nature of silicon on the Fe interface in the ion beam deposited Fe/Si/Fe trilayers keeping the thickness of the Fe layers fixed at 3 nm and varying the thickness of the silicon sandwich layer from 1.5 nm to 4 nm. Grazing incidence x-ray diffraction and atomic force microscopy techniques were used, respectively, to study the structural and morphological changes in the deposited films as a function of layer thickness. The structural studies show silicide formation at the interfaces during deposition and better crystalline structure of Fe layers at a lower spacer layer thickness. The magnetization behavior was investigated using magneto-optical Kerr effect, which clearly shows that coupling between the ferromagnetic layers is highly influenced by the semiconductor spacer layer thickness. A strong antiferromagnetic coupling was observed for a value of tSi = 2.5 nm but above this value an unexpected behavior of hysteresis loop (step like) with two coercivity values is recorded. For spacer layer thickness greater than 2.5 nm, an elemental amorphous Si layer starts to appear in the spacer layer in addition to the silicide layer at the interfaces. It is observed that in the trilayer structure, Fe layers consist of various stacks, viz., Si doped Fe layers, ferromagnetic silicide layer, and nonmagnetic silicide layer at the interfaces. The two phase hysteresis loop is explained on the basis of magnetization reversal of two ferromagnetic layers, independent of each other, with different coercivities. X-ray photo electron spectroscopy technique was also used to study interfaces characteristics as a function of tSi.

Two-phase chromium-niobium alloys exhibiting improved mechanical properties at high temperatures

DOEpatents

Liu, Chain T.; Takeyama, Masao

1994-01-01

The specification discloses chromium-niobium alloys which exhibit improved mechanical properties at high temperatures in the range of 1250.degree. C. and improved room temperature ductility. The alloys contain a Cr.sub.2 Nb-rich intermetallic phase and a Cr-rich phase with an overall niobium concentration in the range of from about 5 to about 18 at. %. The high temperature strength is substantially greater than that of state of the art nickel-based superalloys for enhanced high temperature service. Further improvements in the properties of the compositions are obtained by alloying with rhenium and aluminum; and additional rare-earth and other elements.

Two-phase chromium-niobium alloys exhibiting improved mechanical properties at high temperatures

DOEpatents

Liu, C.T.; Takeyama, Masao.

1994-02-01

The specification discloses chromium-niobium alloys which exhibit improved mechanical properties at high temperatures in the range of 1250 C and improved room temperature ductility. The alloys contain a Cr[sub 2]Nb-rich intermetallic phase and a Cr-rich phase with an overall niobium concentration in the range of from about 5 to about 18 at. %. The high temperature strength is substantially greater than that of state of the art nickel-based superalloys for enhanced high temperature service. Further improvements in the properties of the compositions are obtained by alloying with rhenium and aluminum; and additional rare-earth and other elements. 14 figures.

Low-gravity processing of superconducting compounds

NASA Technical Reports Server (NTRS)

Otto, G. H.

1976-01-01

Low gravity conditions can be sustained on earth for several seconds in an evacuated drop tube. Because radiation cooling is most effective at high temperatures, the refractive metals and alloys are prime candidates for free fall solidification. The results of initial experiments on droplet formation, droplet release, critical size and evaporation losses are given. The time required for free fall solidification of different size droplets is calculated. The materials studied were copper, niobium and vanadium, and a niobium-tin alloys. Improvements in purity, composition, homogeneity and stoichiometry are expected during free fall solidification of niobium based alloys which should become evident in an increase in the superconducting transition temperature.

Dependence of the microwave surface resistance of superconducting niobium on the magnitude of the rf field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Romanenko, A.; Grassellino, A.

Utilizing difference in temperature dependencies we decoupled Bardeen-Cooper-Schrieffer (BCS) and residual components of the microwave surface resistance of superconducting niobium at all rf fields up to B{sub rf}{approx}115 mT. We reveal that the residual resistance decreases with field at B{sub rf} Less-Than-Or-Equivalent-To 40 mT and strongly increases in chemically treated niobium at B{sub rf}>80 mT. We find that BCS surface resistance is weakly dependent on field in the clean limit, whereas a strong and peculiar field dependence emerges after 120 Degree-Sign C vacuum baking.

Metal/ceramic composites with high hydrogen permeability

DOEpatents

Dorris, Stephen E.; Lee, Tae H.; Balachandran, Uthamalingam

2003-05-27

A membrane for separating hydrogen from fluids is provided comprising a sintered homogenous mixture of a ceramic composition and a metal. The metal may be palladium, niobium, tantalum, vanadium, or zirconium or a binary mixture of palladium with another metal such as niobium, silver, tantalum, vanadium, or zirconium.

Effects of combined silicon and molybdenum alloying on the size and evolution of microalloy precipitates in HSLA steels containing niobium and titanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pavlina, Erik J., E-mail: e.pavlina@deakin.edu.au; Van Tyne, C.J.; Speer, J.G.

2015-04-15

The effects of combined silicon and molybdenum alloying additions on microalloy precipitate formation in austenite after single- and double-step deformations below the austenite no-recrystallization temperature were examined in high-strength low-alloy (HSLA) steels microalloyed with titanium and niobium. The precipitation sequence in austenite was evaluated following an interrupted thermomechanical processing simulation using transmission electron microscopy. Large (~ 105 nm), cuboidal titanium-rich nitride precipitates showed no evolution in size during reheating and simulated thermomechanical processing. The average size and size distribution of these precipitates were also not affected by the combined silicon and molybdenum additions or by deformation. Relatively fine (< 20more » nm), irregular-shaped niobium-rich carbonitride precipitates formed in austenite during isothermal holding at 1173 K. Based upon analysis that incorporated precipitate growth and coarsening models, the combined silicon and molybdenum additions were considered to increase the diffusivity of niobium in austenite by over 30% and result in coarser precipitates at 1173 K compared to the lower alloyed steel. Deformation decreased the size of the niobium-rich carbonitride precipitates that formed in austenite. - Highlights: • We examine combined Si and Mo additions on microalloy precipitation in austenite. • Precipitate size tends to decrease with increasing deformation steps. • Combined Si and Mo alloying additions increase the diffusivity of Nb in austenite.« less

Work function characterization of solution-processed cobalt silicide

DOE PAGES

Ullah, Syed Shihab; Robinson, Matt; Hoey, Justin; ...

2012-05-08

Cobalt silicide thin films were prepared by spin-coating Si6H12-based inks onto various substrates followed by a thermal treatment. The work function of the solution processed Co-Si was determined by both capacitance-voltage (C-V) measurements of metal-oxide-semiconductor (MOS) structures as well as by ultraviolet photoelectron spectroscopy (UPS). The UPS-derived work function was 4.80 eV for a Co-Si film on Si (100) while C-V of MOS structures yielded a work function of 4.36 eV where the metal was solution-processed Co-Si, the oxide was SiO2 and the semiconductor was a B-doped Si wafer.

Polarization-independent dual-band terahertz metamaterial absorbers based on gold/parylene-C/silicide structure.

PubMed

Wen, Yongzheng; Ma, Wei; Bailey, Joe; Matmon, Guy; Yu, Xiaomei; Aeppli, Gabriel

2013-07-01

We design, fabricate, and characterize dual-band terahertz (THz) metamaterial absorbers with high absorption based on structures consisting of a cobalt silicide (Co-Si) ground plane, a parylene-C dielectric spacer, and a metal top layer. By combining two periodic metal resonators that couple separately within a single unit cell, a polarization-independent absorber with two distinct absorption peaks was obtained. By varying the thickness of the dielectric layer, we obtain absorptivity of 0.76 at 0.76 THz and 0.97 at 2.30 THz, which indicates the Co-Si ground plane absorbers present good performance.

Microalloying of transition metal silicides by mechanical activation and field-activated reaction

DOEpatents

Munir, Zuhair A [Davis, CA; Woolman, Joseph N [Davis, CA; Petrovic, John J [Los Alamos, NM

2003-09-02

Alloys of transition metal suicides that contain one or more alloying elements are fabricated by a two-stage process involving mechanical activation as the first stage and densification and field-activated reaction as the second stage. Mechanical activation, preferably performed by high-energy planetary milling, results in the incorporation of atoms of the alloying element(s) into the crystal lattice of the transition metal, while the densification and field-activated reaction, preferably performed by spark plasma sintering, result in the formation of the alloyed transition metal silicide. Among the many advantages of the process are its ability to accommodate materials that are incompatible in other alloying methods.

Photocatalytic hydrogen evolution over β-iron silicide under infrared-light irradiation.

PubMed

Yoshimizu, Masaharu; Kobayashi, Ryoya; Saegusa, Makoto; Takashima, Toshihiro; Funakubo, Hiroshi; Akiyama, Kensuke; Matsumoto, Yoshihisa; Irie, Hiroshi

2015-02-18

We investigated the ability of β-iron silicide (β-FeSi2) to serve as a hydrogen (H2)-evolution photocatalyst due to the potential of its conduction band bottom, which may allow thermodynamically favorable H2 evolution in spite of its small band-gap of 0.80 eV. β-FeSi2 had an apparent quantum efficiency for H2 evolution of ∼24% up to 950 nm (near infrared light), in the presence of the dithionic acid ion (S2O6(2-)) as a sacrificial agent. It was also sensitive to infrared light (>1300 nm) for H2 evolution.

Degradation and reuse of radiative thermal protection system materials for the space shuttle

NASA Technical Reports Server (NTRS)

Bartlett, E. S.; Maykuth, D. J.; Grinberg, I. M.; Luce, R. G.

1971-01-01

Three silicide coated columbium alloys and two cobalt alloys were subjected to identical simulated reentry profiling exposures in both static (controlled vacuum leak) and dynamic (hypersonic plasma shear) environments. Primary emphasis in the columbium alloy evaluation was on the Cb752 and C129Y alloys with a lesser amount on FS85. Commercial silicide coatings of the R512E and VH109 formulations were used. The coated specimens were intentionally defected to provide the types of coating flaws that are expected in service. Temperatures were profiled up to peak temperatures of either 2350 F or 2500 F for 15 minutes in each cycle.

Rapid Solid-State Metathesis Routes to Nanostructured Silicon-Germainum

NASA Technical Reports Server (NTRS)

Rodriguez, Marc (Inventor); Kaner, Richard B. (Inventor); Bux, Sabah K. (Inventor); Fleurial, Jean-Pierre (Inventor)

2014-01-01

Methods for producing nanostructured silicon and silicon-germanium via solid state metathesis (SSM). The method of forming nanostructured silicon comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and an alkaline earth metal silicide into a homogeneous powder, and initating the reaction between the silicon tetraiodide (SiI4) with the alkaline earth metal silicide. The method of forming nanostructured silicon-germanium comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and a germanium based precursor into a homogeneous powder, and initiating the reaction between the silicon tetraiodide (SiI4) with the germanium based precursors.

Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

DOE PAGES

Harp, Jason Michael; Lessing, Paul Alan; Hoggan, Rita Elaine

2015-06-21

In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U 3Si 2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U 3Si 2 has been optimized and high phase purity U 3Si 2 has been successfully produced. Results are presentedmore » from sintering studies and microstructural examinations that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ±0.06 g/cm 3. Additional characterization of the pellets by scaning electron microscopy and X-ray diffraction has also been performed. As a result, pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon.« less

Phase Evolution in and Creep Properties of Nb-Rich Nb-Si-Cr Eutectics

NASA Astrophysics Data System (ADS)

Gang, Florian; Kauffmann, Alexander; Heilmaier, Martin

2018-03-01

In this work, the Nb-rich ternary eutectic in the Nb-Si-Cr system has been experimentally determined to be Nb-10.9Si-28.4Cr (in at. pct). The eutectic is composed of three main phases: Nb solid solution (Nbss), β-Cr2Nb, and Nb9(Si,Cr)5. The ternary eutectic microstructure remains stable for several hundred hours at a temperature up to 1473 K (1200 °C). At 1573 K (1300 °C) and above, the silicide phase Nb9(Si,Cr)5 decomposes into α-Nb5Si3, Nbss, and β-Cr2Nb. Under creep conditions at 1473 K (1200 °C), the alloy deforms by dislocation creep while the major creep resistance is provided by the silicide matrix. If the silicide phase is fragmented and, thus, its matrix character is destroyed by prior heat treatment [ e.g., at 1773 K (1500 °C) for 100 hours], creep is mainly controlled by the Laves phase β-Cr2Nb, resulting in increased minimum strain rates. Compared to state of the art Ni-based superalloys, the creep resistance of this three-phase eutectic alloy is significantly higher.

Growth, stability and decomposition of Mg2Si ultra-thin films on Si (100)

NASA Astrophysics Data System (ADS)

Sarpi, B.; Zirmi, R.; Putero, M.; Bouslama, M.; Hemeryck, A.; Vizzini, S.

2018-01-01

Using Auger Electron Spectroscopy (AES), Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and Low Energy Electron Diffraction (LEED), we report an in-situ study of amorphous magnesium silicide (Mg2Si) ultra-thin films grown by thermally enhanced solid-phase reaction of few Mg monolayers deposited at room temperature (RT) on a Si(100) surface. Silicidation of magnesium films can be achieved in the nanometric thickness range with high chemical purity and a high thermal stability after annealing at 150 °C, before reaching a regime of magnesium desorption for temperatures higher than 350 °C. The thermally enhanced reaction of one Mg monolayer (ML) results in the appearance of Mg2Si nanometric crystallites leaving the silicon surface partially uncovered. For thicker Mg deposition nevertheless, continuous 2D silicide films are formed with a volcano shape surface topography characteristic up to 4 Mg MLs. Due to high reactivity between magnesium and oxygen species, the thermal oxidation process in which a thin Mg2Si film is fully decomposed (0.75 eV band gap) into a magnesium oxide layer (6-8 eV band gap) is also reported.

Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts.

PubMed

Habicht, S; Zhao, Q T; Feste, S F; Knoll, L; Trellenkamp, S; Ghyselen, B; Mantl, S

2010-03-12

We present electrical characterization of nickel monosilicide (NiSi) contacts formed on strained and unstrained silicon nanowires (NWs), which were fabricated by top-down processing of initially As(+) implanted and activated strained and unstrained silicon-on-insulator (SOI) substrates. The resistivity of doped Si NWs and the contact resistivity of the NiSi to Si NW contacts are studied as functions of the As(+) ion implantation dose and the cross-sectional area of the wires. Strained silicon NWs show lower resistivity for all doping concentrations due to their enhanced electron mobility compared to the unstrained case. An increase in resistivity with decreasing cross section of the NWs was observed for all implantation doses. This is ascribed to the occurrence of dopant deactivation. Comparing the silicidation of uniaxially tensile strained and unstrained Si NWs shows no difference in silicidation speed and in contact resistivity between NiSi/Si NW. Contact resistivities as low as 1.2 x 10(-8) Omega cm(-2) were obtained for NiSi contacts to both strained and unstrained Si NWs. Compared to planar contacts, the NiSi/Si NW contact resistivity is two orders of magnitude lower.

Ultrashort channel silicon nanowire transistors with nickel silicide source/drain contacts.

PubMed

Tang, Wei; Dayeh, Shadi A; Picraux, S Tom; Huang, Jian Yu; Tu, King-Ning

2012-08-08

We demonstrate the shortest transistor channel length (17 nm) fabricated on a vapor-liquid-solid (VLS) grown silicon nanowire (NW) by a controlled reaction with Ni leads on an in situ transmission electron microscope (TEM) heating stage at a moderate temperature of 400 °C. NiSi(2) is the leading phase, and the silicide-silicon interface is an atomically sharp type-A interface. At such channel lengths, high maximum on-currents of 890 (μA/μm) and a maximum transconductance of 430 (μS/μm) were obtained, which pushes forward the performance of bottom-up Si NW Schottky barrier field-effect transistors (SB-FETs). Through accurate control over the silicidation reaction, we provide a systematic study of channel length dependent carrier transport in a large number of SB-FETs with channel lengths in the range of 17 nm to 3.6 μm. Our device results corroborate with our transport simulations and reveal a characteristic type of short channel effects in SB-FETs, both in on- and off-state, which is different from that in conventional MOSFETs, and that limits transport parameter extraction from SB-FETs using conventional field-effect transconductance measurements.

Uranium silicide pellet fabrication by powder metallurgy for accident tolerant fuel evaluation and irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harp, Jason Michael; Lessing, Paul Alan; Hoggan, Rita Elaine

In collaboration with industry, Idaho National Laboratory is investigating uranium silicide for use in future light water reactor fuels as a more accident resistant alternative to uranium oxide base fuels. Specifically this project was focused on producing uranium silicide (U 3Si 2) pellets by conventional powder metallurgy with a density greater than 94% of the theoretical density. This work has produced a process to consistently produce pellets with the desired density through careful optimization of the process. Milling of the U 3Si 2 has been optimized and high phase purity U 3Si 2 has been successfully produced. Results are presentedmore » from sintering studies and microstructural examinations that illustrate the need for a finely ground reproducible particle size distribution in the source powder. The optimized process was used to produce pellets for the Accident Tolerant Fuel-1 irradiation experiment. The average density of these pellets was 11.54 ±0.06 g/cm 3. Additional characterization of the pellets by scaning electron microscopy and X-ray diffraction has also been performed. As a result, pellets produced in this work have been encapsulated for irradiation, and irradiation in the Advanced Test Reactor is expected soon.« less

High temperature chlorosilane corrosion of iron and AISI 316L stainless steel

NASA Astrophysics Data System (ADS)

Aller, Joshua Loren

Chlorosilane gas streams are used at high temperatures (>500°C) throughout the semiconductor, polycrystalline silicon, and fumed silica industries, primarily as a way to refine, deposit, and produce silicon and silicon containing materials. The presence of both chlorine and silicon in chlorosilane species creates unique corrosion environments due to the ability of many metals to form both metal-chlorides and metal-silicides, and it is further complicated by the fact that many metal-chlorides are volatile at high-temperatures while metal-silicides are generally stable. To withstand the uniquely corrosive environments, expensive alloys are often utilized, which increases the cost of final products. This work focuses on the corrosion behavior of iron, the primary component of low-cost alloys, and AISI 316L, a common low-cost stainless steel, in environments representative of industrial processes. The experiments were conducted using a customized high temperature chlorosilane corrosion system that exposed samples to an atmospheric pressure, high temperature, chlorosilane environment with variable input amounts of hydrogen, silicon tetrachloride, and hydrogen chloride plus the option of embedding samples in silicon during the exposure. Pre and post exposure sample analysis including scanning electron microscopy, x-ray diffraction, energy dispersive x-ray spectroscopy, and gravimetric analysis showed the surface corrosion products varied depending on the time, temperature, and environment that the samples were exposed to. Most commonly, a volatile chloride product formed first, followed by a stratified metal silicide layer. The chlorine and silicon activities in the corrosion environment were changed independently and were found to significantly alter the corrosion behavior; a phenomenon supported by computational thermodynamic equilibrium simulations. It was found that in comparable environments, the stainless steel corroded significantly less than the pure iron. This is likely due to the alloying elements present in stainless steel that promote formation of other stable silicides. Mechanistic models were developed to describe the formation and evolution of metal silicide and/or metal chloride surface corrosion products in chlorosilane environments. These models will help inform materials selection and/or support process development for next-generation chlorosilane-based production and deposition systems. The implementation of low cost materials of construction in these systems could lower the cost of final products in these industries.

Apparatus and process for passivating an SRF cavity

DOEpatents

Myneni, Ganapati Rao; Wallace, John P

2014-12-02

An apparatus and process for the production of a niobium cavity exhibiting high quality factors at high gradients is provided. The apparatus comprises a first chamber positioned within a second chamber, an RF generator and vacuum pumping systems. The process comprises placing the niobium cavity in a first chamber of the apparatus; thermally treating the cavity by high temperature in the first chamber while maintaining high vacuum in the first and second chambers; and applying a passivating thin film layer to a surface of the cavity in the presence of a gaseous mixture and an RF field. Further a niobium cavity exhibiting high quality factors at high gradients produced by the method of the invention is provided.

Distribution of Stress in Deformation Zone of Niobium Microalloyed Steel

NASA Astrophysics Data System (ADS)

Jandrlić, Ivan; Rešković, Stoja; Brlić, Tin

2018-03-01

Microalloyed steels today represent a significant part of total world production and processing of steel. Although widely used, there are scarce data on the stress distribution in the deformation zone of these steels. Research was carried out on two steel grades, both low-carbon structural steels with the same basic chemical composition, with one of them additionally microalloyed with niobium. Differences in the stress distribution in the deformation zone between two tested steels were continuously observed and measured using the methods of digital image correlation and thermography. It has been found out that niobium microalloyed steel has significantly more complex material flow and stress distribution in the deformation zone when compared to the plain low carbon steel.

Distribution of Stress in Deformation Zone of Niobium Microalloyed Steel

NASA Astrophysics Data System (ADS)

Jandrlić, Ivan; Rešković, Stoja; Brlić, Tin

2018-07-01

Microalloyed steels today represent a significant part of total world production and processing of steel. Although widely used, there are scarce data on the stress distribution in the deformation zone of these steels. Research was carried out on two steel grades, both low-carbon structural steels with the same basic chemical composition, with one of them additionally microalloyed with niobium. Differences in the stress distribution in the deformation zone between two tested steels were continuously observed and measured using the methods of digital image correlation and thermography. It has been found out that niobium microalloyed steel has significantly more complex material flow and stress distribution in the deformation zone when compared to the plain low carbon steel.

Sol-gel preparation of lead magnesium niobate (PMN) powders and thin films

DOEpatents

Boyle, T.J.

1999-01-12

A method of preparing a lead magnesium niobium oxide (PMN), Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}, precursor solution by a solvent method wherein a liquid solution of a lead-complex PMN precursor is combined with a liquid solution of a niobium-complex PMN precursor, the combined lead- and niobium-complex liquid solutions are reacted with a magnesium-alkyl solution, forming a PMN precursor solution and a lead-based precipitate, and the precipitate is separated from the reacted liquid PMN precursor solution to form a precipitate-free PMN precursor solution. This precursor solution can be processed to form both ferroelectric powders and thin films. 3 figs.

Dual-step synthesis of 3-dimensional niobium oxide - Zinc oxide

NASA Astrophysics Data System (ADS)

Rani, Rozina Abdul; Zoolfakar, Ahmad Sabirin; Rusop, M.

2018-05-01

A facile fabrication process for constructing 3-dimensional (3D) structure of Niobium oxide - Zinc oxide (Nb2O5-ZnO) consisting of branched ZnO microrods on top of nanoporous Nb2O5 films was developed based on dual-step synthesis approach. The preliminary procedure was anodization of sputtered niobium metal on Fluorine doped Tin Oxide (FTO) to produce nanoporous Nb2O5, and continued with the growth of branched microrods of ZnO by hydrothermal process. This approach offers insight knowledge on the development of novel 3D metal oxide films via dual-step synthesis process, which might potentially use for multi-functional applications ranging from sensing to photoconversion.

Determination of Activities of Niobium in Cu-Nb Melts Containing Dilute Nb

NASA Astrophysics Data System (ADS)

Wang, Daya; Yan, Baijun; Sichen, Du

2015-04-01

The activity coefficients of niobium in Cu-Nb melts were measured by equilibrating solid NbO2 with liquid copper under controlled oxygen potentials in the temperature range of 1773 K to 1898 K (1500 °C to 1625 °C). Either CO-CO2 gas mixture or H2-CO2 gas mixture was employed to obtain the desired oxygen partial pressures. Cu-Nb system was found to follow Henry's law in the composition range studied. The temperature dependence of Henry's constant in the Cu-Nb melts could be expressed as follows: The partial molar excess Gibbs energy change of niobium in Cu-Nb melts can be expressed as follows:

Sol-Gel Preparation Of Lead Magnesium Ni Obate (Pmn) Powdersand Thin Films

DOEpatents

Boyle, Timothy J.

1999-01-12

A method of preparing a lead magnesium niobium oxide (PMN), Pb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3, precursor solution by a solvent method wherein a liquid solution of a lead-complex PMN precursor is combined with a liquid solution of a niobium-complex PMN precursor, the combined lead- and niobium-complex liquid solutions are reacted with a magnesium-alkyl solution, forming a PMN precursor solution and a lead-based precipitate, and the precipitate is separated from the reacted liquid PMN precursor solution to form a precipitate-free PMN precursor solution. This precursor solution can be processed to form both ferroelectric powders and thin films.

77 FR 13156 - Carolina Power & Light Company; Shearon Harris Nuclear Power Plant, Unit 1; Exemption

Federal Register 2010, 2011, 2012, 2013, 2014

2012-03-05

... percent) and niobium (~1 percent). The elimination of tin has resulted in superior corrosion resistance and reduced irradiation-induced growth relative to both standard zircaloy (1.7 percent tin) and low-tin zircaloy (1.2 percent tin). The addition of niobium increases ductility, which is desirable to...

Long range ordered alloys modified by addition of niobium and cerium

DOEpatents

Liu, C.T.

1984-08-22

Long range ordered alloys are described having the nominal composition (Fe,Ni,Co)/sub 3/ (V,M) where M is a ductility enhancing metal selected from the group Ti, Zr, Hf with additions of small amounts of cerium and niobium to dramatically enhance the creep properties of the resulting alloys.

Quantum Efficiency as a Function of Temperature in Metal Photocathodes

DTIC Science & Technology

2013-06-01

Srinivasan-Rao, I. Ben-Zvi, A. Burrill, H. Hahn, D. Kayran, Y. Zhao, and M. Cole. “Photoemission studies on BNL /AES/JLAB all niobium, superconducting RF...Hershcovitch, D. Pate, A. Reuter et al., “Design, construction and status of all niobium superconducting photoinjector at BNL ,” Proc. IEEE of the

Long range ordered alloys modified by addition of niobium and cerium

DOEpatents

Liu, Chain T.

1987-01-01

Long range ordered alloys are described having the nominal composition (Fe,Ni,Co).sub.3 (V,M) where M is a ductility enhancing metal selected from the group Ti, Zr, Hf with additions of small amounts of cerium and niobium to drammatically enhance the creep properties of the resulting alloys.

Test Result of 650 MHz, Beta 0.61 Single Cell Niobium Cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seth, Sudeshna; Bhattacharyya, Pranab; Dutta Gupta, Anjan

VECC has been involved in the design, analysis and development of 650 MHz, beta 0.61 (LB650), elliptical Superconducting RF linac cavity, as part of research and development activities on SRF cavities and associated technologies under Indian Institutions Fermilab Collaboration (IIFC). A single-cell niobium cavity has been indigenously designed and developed at VECC, with the help of Electron Beam Welding (EBW) facility at IUAC, New Delhi. Various measurements, processing and testing at 2K in Vertical Test Stand (VTS) of the single-cell cavity was carried out at ANL and Fermilab, USA, with active participation of VECC engineers. It achieved a maximum acceleratingmore » gradient(Eacc) of 34.5 MV/m with Quality Factor of 2·10⁹ and 30 MV/m with Quality Factor of 1.5·10¹⁰. This is probably the highest accelerating gradient achieved so far in the world for LB650 cavities. This paper describes the design, fabrication and measurement of the single cell niobium cavity. Cavity processing and test results of Vertical Test of the single-cell niobium cavity are also presented.« less

Effect of interstitial impurities on the field dependent microwave surface resistance of niobium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinello, M.; Grassellino, A.; Checchin, M.

Previous work has demonstrated that the radio frequency surface resistance of niobium resonators is dramatically reduced when nitrogen impurities are dissolved as interstitial in the material. The origin of this effect is attributed to the lowering of the Mattis and Bardeen surface resistance contribution with increasing accelerating field. Meanwhile, an enhancement of the sensitivity to trapped magnetic field is typically observed for such cavities. In this paper we conduct the first systematic study on these different components contributing to the total surface resistance as a function of different levels of dissolved nitrogen, in comparison with standard surface treatments for niobiummore » resonators. Adding these results together we are able to show for the first time which is the optimum surface treatment that maximizes the Q-factor of superconducting niobium resonators as a function of expected trapped magnetic field in the cavity walls. Lastly, these results also provide new insights on the physics behind the change in the field dependence of the Mattis and Bardeen surface resistance, and of the trapped magnetic vortex induced losses in superconducting niobium resonators.« less

Synthesis and thermal evolution of structure in alkoxide-derived niobium pentoxide gels

NASA Technical Reports Server (NTRS)

Bansal, Narottam P.

1993-01-01

Niobium pentoxide gels in the form of transparent monoliths and powder have been synthesized from the controlled hydrolysis and polycondensation of niobium pentaethoxide under different experimental conditions using various mole ratios of Nb(OC2H5)5:H2O:C2H5OH:HCl. Alcohol acted as the mutual solvent and HCl as the deflocculating agent. In the absence of HCl, precipitation of colloidal particles was encountered on the addition of any water to the alkoxide. The gels were subjected to various thermal treatments and characterized by differential thermal analysis, thermogravimetric analysis, x-ray diffraction, and infrared spectroscopy. After drying at 400 C, the gels were amorphous to x-rays. The amorphous powder crystallized into the low-temperature orthorhombic form of Nb2O5 at approximately 500 C, which transformed irreversibly into the high-temperature monoclinic alpha-Nb2O5 between 900 to 1000 C. The kinetics of crystallization of the amorphous niobium pentoxide have been investigated by non-isothermal differential scanning calorimetry. The crystallization activation energy was determined to be 399 kJ/mol.

Effect of interstitial impurities on the field dependent microwave surface resistance of niobium

DOE PAGES

Martinello, M.; Grassellino, A.; Checchin, M.; ...

2016-08-09

Previous work has demonstrated that the radio frequency surface resistance of niobium resonators is dramatically reduced when nitrogen impurities are dissolved as interstitial in the material. The origin of this effect is attributed to the lowering of the Mattis and Bardeen surface resistance contribution with increasing accelerating field. Meanwhile, an enhancement of the sensitivity to trapped magnetic field is typically observed for such cavities. In this paper we conduct the first systematic study on these different components contributing to the total surface resistance as a function of different levels of dissolved nitrogen, in comparison with standard surface treatments for niobiummore » resonators. Adding these results together we are able to show for the first time which is the optimum surface treatment that maximizes the Q-factor of superconducting niobium resonators as a function of expected trapped magnetic field in the cavity walls. Lastly, these results also provide new insights on the physics behind the change in the field dependence of the Mattis and Bardeen surface resistance, and of the trapped magnetic vortex induced losses in superconducting niobium resonators.« less

Niobium boride layers deposition on the surface AISI D2 steel by a duplex treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kon, O., E-mail: okon42@htotmail.com; Pazarlioglu, S.; Sen, S.

2015-03-30

In this paper, we investigated the possibility of deposition of niobium boride layers on the surface of AISI D2 steel by a duplex treatment. At the first step of duplex treatment, boronizing was performed on AISI D2 steel samples at 1000{sup o}C for 2h and then pre-boronized samples niobized at 850°C, 900°C and 950°C using thermo-reactive deposition method for 1–4 h. The presence of the niobium boride layers such as NbB, NbB{sub 2} and Nb{sub 3}B{sub 4} and also iron boride phases such as FeB, Fe{sub 2}B were examined by X-ray diffraction analysis. Scanning electron microscope (SEM) and micro-hardness measurementsmore » were realized. Experimental studies showed that the depth of the coating layers increased with increasing temperature and times and also ranged from 0.42 µm to 2.43 µm, depending on treatment time and temperature. The hardness of the niobium boride layer was 2620±180 HV{sub 0.005}.« less

The preparation of pure niobium for neutron dosimetry purposes

NASA Astrophysics Data System (ADS)

Schulze, Klaus; Krehl, Michael

1985-06-01

A technique is described for the preparation of high purity niobium for use in fast neutron dosimetry. Based on results of known purification processes for niobium, an optimized method has been developed, consisting of: (1) a double electrolytic refining in an eutectic lithium-, sodium-, potassium-fluoride melt, containing fluoro-potassium niobate (K 2NbF 7), (2) electron beam float zone melting (EBFZM) in ultra high vacuum (UHV) and (3) UHV treatments. Starting with EBFZM of niobium of commercial quality (140 μg/g Ta, 35 μg/g W) the tantalum and tungsten contents were reduced by a first electrolysis to approximately 4 and 4 × 10 -2 μg/g, respectively. For a second electrolytic refining using a salt bath with extremely low tantalum and tungsten contents, this material was subjected to an additional EBFZM process. The niobium metal produced by this step was three times zone melted to reduce those elements (e.g. Fe, Co, Ni, O, N) which increased during the electrolyses. Material produced by this technique has impurity concentrations below 0.4 μg/g of tantalum and 10 -2 μg/g of tungsten. The concentration of the interstitials (C, O, N except H) is below the detection limit of classical analytical methods. A further reduction of the interstitials by annealing treatments in UHV of this material resulted in an electrical residual resistivity ratio (RRR) ρ(295 K)/ ρ(4.2 K) = 24 500 indicating an impurity concentration far below 1 μg/g.

Physics and material science of ultra-high quality factor superconducting resonator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vostrikov, Alexander

2015-08-01

The nitrogen doping into niobium superconducting radio frequency cavity walls aiming to improve the fundamental mode quality factor is the subject of the research in the given work. Quantitative nitrogen diffusion into niobium model calculating the concentration profile was developed. The model estimations were confirmed with secondary ion mass spectrometry technique measurements. The model made controlled nitrogen doping recipe optimization possible. As a result the robust reproducible recipe for SRF cavity walls treatment with nitrogen doping was developed. The cavities produced with optimized recipe met LCLS–II requirements on quality factor of 2.7 ∙ 10 10 at acceleration field of 16more » MV/m. The microscopic effects of nitrogen doping on superconducting niobium properties were studied with low energy muon spin rotation technique and magnetometer measurements. No significant effect of nitrogen on the following features was found: electron mean free path, magnetic field penetration depth, and upper and surface critical magnetic fields. It was detected that for nitrogen doped niobium samples magnetic flux starts to penetrate inside the superconductor at lower external magnetic field value compared to the low temperature baked niobium ones. This explains lower quench field of SRF cavities treated with nitrogen. Quality factor improvement of fundamental mode forced to analyze the high order mode (HOM) impact on the particle beam dynamics. Both resonant and cumulative effects caused by monopole and dipole HOMs respectively are found to be negligible within the requirements for LCLS–II.« less

Development and fabrication of improved Schottky power diodes

NASA Technical Reports Server (NTRS)

Cordes, L. F.; Garfinkel, M.; Taft, E. A.

1975-01-01

Reproducible methods for the fabrication of silicon Schottky diodes have been developed for tungsten, aluminum, conventional platinum silicide, and low temperature platinum silicide. Barrier heights and barrier lowering under reverse bias have been measured, permitting the accurate prediction of forward and reverse diode characteristics. Processing procedures have been developed that permit the fabrication of large area (about 1 sq cm) mesageometry power Schottky diodes with forward and reverse characteristics that approach theoretical values. A theoretical analysis of the operation of bridge rectifier circuits has been performed, which indicates the ranges of frequency and voltage for which Schottky rectifiers are preferred to p-n junctions. Power Schottky rectifiers have been fabricated and tested for voltage ratings up to 140 volts.

Diamond Composite Films for Protective Coatings on Metals and Method of Formation

NASA Technical Reports Server (NTRS)

Ong, Tiong P. (Inventor); Shing, Yuh-Han (Inventor)

1997-01-01

Composite films consisting of diamond crystallites and hard amorphous films such as diamond-like carbon, titanium nitride, and titanium oxide are provided as protective coatings for metal substrates against extremely harsh environments. A composite layer having diamond crystallites and a hard amorphous film is affixed to a metal substrate via an interlayer including a bottom metal silicide film and a top silicon carbide film. The interlayer is formed either by depositing metal silicide and silicon carbide directly onto the metal substrate, or by first depositing an amorphous silicon film, then allowing top and bottom portions of the amorphous silicon to react during deposition of the diamond crystallites, to yield the desired interlayer structure.

Nickel-silicide colloid prepared under mild conditions as a versatile Ni precursor for more efficient CO2 reforming of CH4 catalysts.

PubMed

Baudouin, David; Szeto, Kaï Chung; Laurent, Pierre; De Mallmann, Aimery; Fenet, Bernard; Veyre, Laurent; Rodemerck, Uwe; Copéret, Christophe; Thieuleux, Chloé

2012-12-26

Preparing highly active and stable non-noble-metal-based dry reforming catalysts remains a challenge today. In this context, supported nickel nanoparticles with sizes of 1.3 ± 0.2 and 2.1 ± 0.2 nm were synthesized on silica and ceria, respectively, via a two-step colloidal approach. First, 2-nm nickel-silicide colloids were synthesized from Ni(COD)(2) and octylsilane at low temperature; they were subsequently dispersed onto supports prior to reduction under H(2). The resulting catalysts display high activity in dry reforming compared to their analogues prepared using conventional approaches, ceria providing greatly improved catalyst stability.

Thermoelectric properties of higher manganese silicide/multi-walled carbon nanotube composites.

PubMed

Truong, D Y Nhi; Kleinke, Holger; Gascoin, Franck

2014-10-28

Composites made of Higher Manganese Silicide (HMS)-based compound MnSi1.75Ge0.02 and multi-walled carbon nanotubes (MWCNTs) were prepared by an easy and effective method including mechanical milling under mild conditions and reactive spark plasma sintering. SEM compositional mappings show a homogeneous dispersion of MWCNTs in the HMS matrix. Electronic and thermal transport properties were measured from room temperature to 875 K. While power factors are virtually unchanged by the addition of MWCNTs, the lattice thermal conductivity is significantly reduced by about 30%. As a consequence, the maximum figure of merit for the composites with 1 wt% MWCNTs is improved by about 20% compared to the MWCNT free HMS-based sample.

Niobium: a rare metal with prospects (in German)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beier, E.

1972-01-01

BS>Important chemical, physical, and mechanical properties of niobium and its alloys arc described. These underline the fact that this highly heat- resistant metal has gained more and more importance in the airplane and spaceship industry as well as in chemical processes and nuclear technology during the last decade. The processing characterization (machining, pressing, and welding) are discussed. (GT)

Extreme diffusion limited electropolishing of niobium radiofrequency cavities

DOE PAGES

Crawford, Anthony C.

2017-01-04

In this study, a deeply modulated, regular, continuous, oscillating current waveform is reliably and repeatably achieved during electropolishing of niobium single-cell elliptical radiofrequency cavities. Details of the technique and cavity test results are reported here. The method is applicable for cavity frequencies in the range 500 MHz to 3.9 GHz and can be extended to multicell structures.

Development of Nb{sub 3}Sn Cavity Vapor Diffusion Deposition System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eremeev, Grigory V.; Macha, Kurt M.; Clemens, William A.

2014-02-01

Nb{sub 3}Sn is a BCS superconductors with the superconducting critical temperature higher than that of niobium, so theoretically it surpasses the limitations of niobium in RF fields. The feasibility of technology has been demonstrated at 1.5 GHz with Nb{sub 3}Sn vapor deposition technique at Wuppertal University. The benefit at these frequencies is more pronounced at 4.2 K, where Nb{sub 3}Sn coated cavities show RF resistances an order of magnitude lower than that of niobium. At Jefferson Lab we started the development of Nb{sub 3}Sn vapor diffusion deposition system within an R\\&D development program towards compact light sources. Here we presentmore » the current progress of the system development.« less

Niobium thin film coating on a 500-MHz copper cavity by plasma deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haipeng Wang; Genfa Wu; H. Phillips

2005-05-16

A system using an Electron Cyclotron Resonance (ECR) plasma source for the deposition of a thin niobium film inside a copper cavity for superconducting accelerator applications has been designed and is being constructed. The system uses a 500-MHz copper cavity as both substrate and vacuum chamber. The ECR plasma will be created to produce direct niobium ion deposition. The central cylindrical grid is DC biased to control the deposition energy. This paper describes the design of several subcomponents including the vacuum chamber, RF supply, biasing grid and magnet coils. Operational parameters are compared between an operating sample deposition system andmore » this system. Engineering work progress toward the first plasma creation will be reported here.« less

CONTRIBUTION TO THE GEOCHEMISTRY OF TANTALUM AND NIOBIUM IN THE HYDROTHERMAL-PNEUMATHOLYTIC PROCESS (in Russian)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beus, A.A.; Sitnin, A.A.

1961-01-01

S>Data obtained as a result of geochemical investigations show that tantalum and niobium are typical elements of high-temperature postmagmatic processes (early albitization, greysening) connected with granites. The separation of tantalum and niobium in the hydrothermal-pneumatholytic process (greysening stage), which leads to the concentration of tantalum in albitized and greysenized granites (40 to 100 times compared to the average content in granites) is connected with the different mobility and stability of their acido- complex compounds (in particular fluor- and oxyfluorcomplexes), the existence of which in greysening solutions is suggested. A natural analogy in the behavior of both elements in the processesmore » of postmagmatic metasomatose in granites and granitic pegmatites is suggested. (tr-auth)« less

NbN tunnel junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Villegier, J.C.; Goniche, M.; Renard, P.

1985-03-01

All-niobium nitride Josephson junctions have been prepared successfully using a new processing called SNOP: Selective Niobium (Nitride) Overlap Process. Such a process involves the ''trilayer'' deposition on the whole wafer before selective patterning of the electrodes by optically controlled Dry Reactive Ion Etching. Only two photomask levels are need to define an ''overlap'' or a ''cross-type'' junction with a good accuracy. The properties of the niobium nitride films deposited by DC-Magnetron sputtering and the surface oxide growth are analysed. The most critical point to obtain high quality and high gap value junctions resides in the early stage of the NbNmore » counterelectrode growth. Some possibilities to overcome such a handicap exist even if the fabrication needs substrate temperatures below 250/sup 0/C.« less

Progress on a high current density low cost Niobium3Tin conductor scaleable to modern niobium titanium production

NASA Astrophysics Data System (ADS)

Zeitlin, Bruce A.; Pyon, Taeyoung; Gregory, Eric; Scanlan, R. M.

2002-05-01

A number of configurations of a mono element internal tin conductor (MEIT) were fabricated designed to explore the effect of local ratio, niobium content, and tin content on the overall current density. Critical current densities on four configurations were measured, two to 17T. Current density as a function of filament size was also measured with filaments sizes ranging from 1.8 to 7.1 microns. A Nb60wt%Ta barrier was also explored as a means to reduce the high cost of the Tantalum barrier. The effectiveness of radial copper channels in high Nb conductors is also evaluated. Results are used to suggest designs for more optimized conductors.

Ductile alloy and process for preparing composite superconducting wire

DOEpatents

Verhoeven, John D.; Finnemore, Douglas K.; Gibson, Edwin D.; Ostenson, Jerome E.

1983-03-29

An alloy for the commercial production of ductile superconducting wire is prepared by melting together copper and at least 15 weight percent niobium under non-oxygen-contaminating conditions, and rapidly cooling the melt to form a ductile composite consisting of discrete, randomly distributed and orientated dendritic-shaped particles of niobium in a copper matrix. As the wire is worked, the dendritric particles are realigned parallel to the longitudinal axis and when drawn form a plurality of very fine ductile superconductors in a ductile copper matrix. The drawn wire may be tin coated and wound into magnets or the like before diffusing the tin into the wire to react with the niobium. Impurities such as aluminum or gallium may be added to improve upper critical field characteristics.

Low-Loss NbTiN Films for THz SIS Mixer Tuning Circuits

NASA Technical Reports Server (NTRS)

Kooi, J. W.; Stern, J. A.; Chattopadhyay, G.; LeDuc, H. G.; Bumble, B.; Zmuidzinas, J.

1998-01-01

Recent results at 1 THz using normal-metal tuning circuits have shown that SIS mixers can work well up to twice the gap frequency of the junction material (niobium). However, the performance at 1 THz is limited by the substantial loss in the normal metal films. For better performance superconducting films with a higher gap frequency than niobium and with low RF loss are needed. Niobium nitride has long been considered a good candidate material, but typical NbN films suffer from high RF loss. To circumvent this problem we are currently investigating the RF loss in NbTiN films, a 15 K Tc compound superconductor, by incorporating them into quasi-optical slot antenna SIS devices.

Ductile alloy and process for preparing composite superconducting wire

DOEpatents

Verhoeven, J.D.; Finnemore, D.K.; Gibson, E.D.; Ostenson, J.E.

An alloy for the commercial production of ductile superconducting wire is prepared by melting together copper and at least 15 weight percent niobium under non-oxygen-contaminating conditions, and rapidly cooling the melt to form a ductile composite consisting of discrete, randomly distributed and oriented dendritic-shaped particles of niobium in a copper matrix. As the wire is worked, the dendritic particles are realigned parallel to the longitudinal axis and when drawn form a plurality of very fine ductile superconductors in a ductile copper matrix. The drawn wire may be tin coated and wound into magnets or the like before diffusing the tin into the wire to react with the niobium. Impurities such as aluminum or gallium may be added to improve upper critical field characteristics.

Crystallography and Morphology of MC Carbides in Niobium-Titanium Modified As-Cast HP Alloys

NASA Astrophysics Data System (ADS)

Buchanan, Karl G.; Kral, Milo V.; Bishop, Catherine M.

2014-07-01

The microstructures of two as-cast heats of HP alloy stainless steels modified with niobium and titanium were examined with particular attention paid to the interdendritic niobium-titanium-rich carbides formed during solidification of these alloys. Generally, these precipitates obtain a blocky morphology in the as-cast condition. However, the (NbTi)C precipitates may obtain a nodular morphology. To provide further insight to the origin of the two different morphologies obtained by the (NbTi)C precipitates in the HP-NbTi alloy, the microstructure and crystallography of each have been studied in detail using scanning electron microscopy, transmission electron microscopy, various electron diffraction methods (EBSD, SAD, and CBED), and energy-dispersive X-ray spectroscopy.

Parallel Critical Field in Thin Niobium Films: Comparison to Theory

NASA Astrophysics Data System (ADS)

Broussard, P. R.

2017-10-01

For the first time, a comparison to the predicted behavior for parallel critical field is carried out for the model of Kogan and the model of Hara and Nagai. In this study, thin niobium films in the moderately dirty regime were considered. Experimental values of the -C2 term are seen to be lower than those from the model of Hara and Nagai. A possible reason for this could be not including the non-spherical Fermi surface of niobium into the model. There is clearly disagreement with the model of Kogan as the films get cleaner and thinner, and two films which should be below his critical thickness still show positive values of -C2, in disagreement with his theory.

High-Temperature Syntheses of New, Thermally-Stable Chemical Compounds.

DTIC Science & Technology

SYNTHESIS(CHEMISTRY), HEAT RESISTANT PLASTICS, NITRILES, FLUORINE COMPOUNDS, COMPLEX COMPOUNDS, NITROGEN, SULFIDES, ORGANOMETALLIC COMPOUNDS, ORGANOBORANES, BORIDES, SPINEL, CARBIDES, NITRIDES, SILICIDES .

Study of iridium silicide monolayers using density functional theory

NASA Astrophysics Data System (ADS)

Popis, Minh D.; Popis, Sylvester V.; Oncel, Nuri; Hoffmann, Mark R.; ćakır, Deniz

2018-02-01

In this study, we investigated physical and electronic properties of possible two-dimensional structures formed by Si (silicon) and Ir (iridium). To this end, different plausible structures were modeled by using density functional theory and the cohesive energies calculated for the geometry of optimized structures, with the lowest equilibrium lattice constants. Among several candidate structures, we identified three mechanically (via elastic constants and Young's modulus), dynamically (via phonon calculations), and thermodynamically stable iridium silicide monolayer structures. The lowest energy structure has a chemical formula of Ir2Si4 (called r-IrSi2), with a rectangular lattice (Pmmn space group). Its cohesive energy was calculated to be -0.248 eV (per IrSi2 unit) with respect to bulk Ir and bulk Si. The band structure indicates that the Ir2Si4 monolayer exhibits metallic properties. Other stable structures have hexagonal (P-3m1) and tetragonal (P4/nmm) cell structures with 0.12 and 0.20 eV/f.u. higher cohesive energies, respectively. Our calculations showed that Ir-Si monolayers are reactive. Although O2 molecules exothermically dissociate on the surface of the free-standing iridium silicide monolayers with large binding energies, H2O molecules bind to the monolayers with a rather weak interaction.

Microstructure of the irradiated U 3Si 2/Al silicide dispersion fuel

NASA Astrophysics Data System (ADS)

Gan, J.; Keiser, D. D.; Miller, B. D.; Jue, J.-F.; Robinson, A. B.; Madden, J. W.; Medvedev, P. G.; Wachs, D. M.

2011-12-01

The silicide dispersion fuel of U 3Si 2/Al is recognized as the best performance fuel for many nuclear research and test reactors with up to 4.8 gU/cm 3 fuel loading. An irradiated U 3Si 2/Al dispersion fuel ( 235U ˜ 75%) from the high-flux side of a fuel plate (U0R040) from the Reduced Enrichment for Research and Test Reactors (RERTR)-8 test was characterized using transmission electron microscopy (TEM). The fuel was irradiated in the Advanced Test Reactor (ATR) for 105 days. The average irradiation temperature and fission density of the U 3Si 2 fuel particles for the TEM sample are estimated to be approximately 110 °C and 5.4 × 10 27 f/m 3. The characterization was performed using a 200-kV TEM. The U/Si ratio for the fuel particle and (Si + Al)/U for the fuel-matrix-interaction layer are approximately 1.1 and 4-10, respectively. The estimated average diameter, number density and volume fraction for small bubbles (<1 μm) in the fuel particle are ˜94 nm, 1.05 × 10 20 m -3 and ˜11%, respectively. The results and their implication on the performance of the U 3Si 2/Al silicide dispersion fuel are discussed.

Structural diversity and electronic properties in potassium silicides

NASA Astrophysics Data System (ADS)

Hao, Chun-Mei; Li, Yunguo; Huang, Hong-Mei; Li, Yan-Ling

2018-05-01

Stable potassium silicides in the complete compositional landscape were systematically explored up to 30 GPa using the variable-composition evolutionary structure prediction method. The results show that K4Si, K3Si, K5Si2, K2Si, K3Si2, KSi, KSi2, KSi3, and K8Si46 have their stability fields in the phase diagram. The spatial dimensional diversity of polymerized silicon atoms (0D "isolated" anion, dimer, Si4 group, 1D zigzag chain, 2D layer, and 3D network) under the potassium sublattice was uncovered as silicon content increases. Especially, the 2D layered silicon presents interestingly a variety of shapes, such as the "4 + 6" ring, "4 + 8"ring, and 8-membered ring. K-Si bonding exhibits a mixed covalency and ionicity, while Si-Si bonding is always of covalent character. Semiconductivity or metallicity mainly depends on the form of sublattices and K:Si ratio, which allows us to find more semiconductors in the Si-rich side when closed-shell K cations are encompassed by polymerized Si. The semiconducting silicides present strong absorption in the infrared and visible light range. These findings open up the avenue for experimental synthesis of alkali metal-IVA compounds and potential applications as battery electrode materials or photoelectric materials.

Crystal structure of the ternary silicide Gd2Re3Si5.

PubMed

Fedyna, Vitaliia; Kozak, Roksolana; Gladyshevskii, Roman

2014-12-01

A single crystal of the title compound, the ternary silicide digadolinium trirhenium penta-silicide, Gd2Re3Si5, was isolated from an alloy of nominal composition Gd20Re30Si50 synthesized by arc melting and investigated by X-ray single-crystal diffraction. Its crystal structure belongs to the U2Mn3Si5 structure type. All atoms in the asymmetric lie on special positions. The Gd site has site symmetry m..; the two Mn atoms have site symmetries m.. and 2.22; the three Si atoms have site symmetries m.., ..2 and 4.. . The coordination polyhedra of the Gd atoms have 21 vertices, while those of the Re atoms are cubo-octa-hedra and 13-vertex polyhedra. The Si atoms are arranged as tricapped trigonal prisms, bicapped square anti-prisms, or 11-vertex polyhedra. The crystal structure of the title compound is also related to the structure types CaBe2Ge2 and W5Si3. It can be represented as a stacking of Gd-centred polyhedra of composition [GdSi9]. The Re atoms form infinite chains with an Re-Re distance of 2.78163 (5) Å and isolated squares with an Re-Re distance of 2.9683 (6) Å.

Crystal structure of the ternary silicide Gd2Re3Si5

PubMed Central

Fedyna, Vitaliia; Kozak, Roksolana; Gladyshevskii, Roman

2014-01-01

A single crystal of the title compound, the ternary silicide digadolinium trirhenium penta­silicide, Gd2Re3Si5, was isolated from an alloy of nominal composition Gd20Re30Si50 synthesized by arc melting and investigated by X-ray single-crystal diffraction. Its crystal structure belongs to the U2Mn3Si5 structure type. All atoms in the asymmetric lie on special positions. The Gd site has site symmetry m..; the two Mn atoms have site symmetries m.. and 2.22; the three Si atoms have site symmetries m.., ..2 and 4.. . The coordination polyhedra of the Gd atoms have 21 vertices, while those of the Re atoms are cubo­octa­hedra and 13-vertex polyhedra. The Si atoms are arranged as tricapped trigonal prisms, bicapped square anti­prisms, or 11-vertex polyhedra. The crystal structure of the title compound is also related to the structure types CaBe2Ge2 and W5Si3. It can be represented as a stacking of Gd-centred polyhedra of composition [GdSi9]. The Re atoms form infinite chains with an Re—Re distance of 2.78163 (5) Å and isolated squares with an Re—Re distance of 2.9683 (6) Å. PMID:25552967

Synthesis and photocatalytic activity of electrospun niobium oxide nanofibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qi, Shishun; Zuo, Ruzhong, E-mail: piezolab@hfut.edu.cn; Liu, Yi

2013-03-15

Graphical abstract: Different morphologies are obtained for the electrospun niobium oxide nanofibers with different phase structures. The nanofibers of the two phase structures present different band gap value and the light absorption. Hexagonal phase nanofibers show better photocatalytic activity compared with the orthorhombic nanofibers. Highlights: ► Niobium oxide nanofibers of two phase structures were fabricated by electrospinning. ► Photocatalytic properties of the niobium oxide nanofibers were first explored. ► Nanofibers of different phase structures showed different photocatalytic activities. ► Reasons for the differences in the photocatalysis were carefully discussed. - Abstract: Niobium oxide (Nb{sub 2}O{sub 5}) nanofibers have been synthesizedmore » by sol–gel based electrospinning technique. Pure hexagonal phase (H-Nb{sub 2}O{sub 5}) and orthorhombic phase (O-Nb{sub 2}O{sub 5}) nanofibers were obtained by thermally annealing the electrospun Nb{sub 2}O{sub 5}/polyvinylpyrrolidone composite fibers in air at 500 °C and 700 °C, respectively. The fibers were characterized using the X-ray diffraction, scanning electron microscopy, specific surface area analyzer and UV–vis diffuse reflectance spectroscopy. Photocatalytic activities of the obtained nanofibers were evaluated depending on the degradation of methyl orange. The results indicate that the heat-treatment temperature, the crystalline structure and the morphology affected the physical and chemical properties of the as-prepared Nb{sub 2}O{sub 5} nanofibers. The H-Nb{sub 2}O{sub 5} nanofibers obtained at lower temperature showed better potential for the application as a promising photocatalyst.« less

Serum titanium, niobium and aluminium levels two years following instrumented spinal fusion in children: does implant surface area predict serum metal ion levels?

PubMed

Cundy, Thomas P; Cundy, William J; Antoniou, Georgia; Sutherland, Leanne M; Freeman, Brian J C; Cundy, Peter J

2014-11-01

Measurement of serum metal ion levels is used to determine systemic exposure to implant-derived metal debris that may be generated by processes of wear and corrosion. The aim of this study is to investigate predictors of serum metal ion levels in children undergoing instrumented spinal arthrodesis using a titanium alloy, focusing on implant characteristics and instrumentation construct design variables. This prospective longitudinal cohort study involved 33 children. Serum samples were obtained preoperatively:and at five defined interval periods over the first:two post-operative years. Samples were analysed using high resolution:inductively coupled plasma mass spectrometry to measure titanium, niobium and aluminium concentrations. Instrumentation characteristics were catalogued and construct surface area (SA) measurements calculated using an implant-specific software algorithm tool. Significantly elevated levels of serum titanium and niobium were observed (p< 0.0001), with >95 % of post-operative levels abnormally elevated. Significant predictors of serum titanium and niobium levels included time since surgery, surgical procedure (posterior or anterior fusion), number of levels fused, number of pedicle screws inserted, total rod length, total metal SA, total exposed metal SA and total metal-on-metal SA. All significant instrumentation variables were highly correlated. There is a strong relationship between implant SA and both serum titanium and niobium levels. The direct clinical implications of these findings for patients are uncertain, but remain of concern. Surgeons should be aware of the strong correlation between implant surface area of the chosen construct and the subsequent serum metal ion levels.

Effects of processing conditions and ambient environment on the microstructure and fracture strength of copper/niobium/copper interlayer joints for alumina

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marks, Robert Alan

1999-12-01

Partial transient liquid phase (PTLP) bonding is a technique which can be used to join ceramics with metals and is used to form niobium-based joints for alumina. The principal advantage to PTLP bonding is that it enables refractory joints to be fabricated at temperatures below those typically required by solid state diffusion bonding. A thorough review of the important parameters (chemical compatibility, thermal expansion match, sufficient wettability of the liquid phase on the solid phases) in choosing a joining material for ceramics by the PTLP method is provided. As in conventional PTLP joining, the current study uses thin (=3 μm)more » copper layers sandwiched between the alumina (bulk) and niobium (127 μm). However, unlike the case of copper/nickel/copper obium is limited. Consequently, the copper is not entirely dissolved in the process, resulting in a two phase (copper-rich and niobium-rich phases) microstructure. Different processing conditions (temperature and applied load) result in different morphologies of the copper-rich and niobium-rich phases at the interface. These different microstructures exhibit distinct strength characteristics. Extended annealing of as-processed joints can influence the strengths differently depending on the ambient partial oxygen pressure at the annealing temperature. The focus of this work is to correlate processing conditions, microstructure, and resulting joint strength. Under optimum processing conditions (1400°C, 2.2 MPa), joints with strengths in excess of 200 MPa at 1200°C are fabricated.« less

Rare-earth metal gallium silicides via the gallium self-flux method. Synthesis, crystal structures, and magnetic properties of RE(Ga 1–xSi x)₂ (RE=Y, La–Nd, Sm, Gd–Yb, Lu)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Darone, Gregory M.; Hmiel, Benjamin; Zhang, Jiliang

Fifteen ternary rare-earth metal gallium silicides have been synthesized using molten Ga as a molten flux. They have been structurally characterized by single-crystal and powder X-ray diffraction to form with three different structures—the early to mid-late rare-earth metals RE=La–Nd, Sm, Gd–Ho, Yb and Y form compounds with empirical formulae RE(Ga xSi 1–x)₂ (0.38≤x≤0.63), which crystallize with the tetragonal α-ThSi₂ structure type (space group I4₁/amd, No. 141; Pearson symbol tI12). The compounds of the late rare-earth crystallize with the orthorhombic α-GdSi₂ structure type (space group Imma, No. 74; Pearson symbol oI12), with refined empirical formula REGa xSi 2–x–y (RE=Ho, Er, Tm;more » 0.33≤x≤0.40, 0.10≤y≤0.18). LuGa₀.₃₂₍₁₎Si₁.₄₃₍₁₎ crystallizes with the orthorhombic YbMn₀.₁₇Si₁.₈₃ structure type (space group Cmcm, No. 63; Pearson symbol oC24). Structural trends are reviewed and analyzed; the magnetic susceptibilities of the grown single-crystals are presented. - Graphical abstract: This article details the exploration of the RE–Ga–Si ternary system with the aim to systematically investigate the structural “boundaries” between the α-ThSi₂ and α-GdSi₂-type structures, and studies of the magnetic properties of the newly synthesized single-crystalline materials. Highlights: • Light rare-earth gallium silicides crystallize in α-ThSi₂ structure type. • Heavy rare-earth gallium silicides crystallize in α-GdSi₂ structure type. • LuGaSi crystallizes in a defect variant of the YbMn₀.₁₇Si₁.₈₃ structure type.« less

Formation, optical properties, and electronic structure of thin Yb silicide films on Si(111)

NASA Astrophysics Data System (ADS)

Galkin, N. G.; Maslov, A. M.; Polyarnyi, V. O.

2005-06-01

Continuous very thin (2.5-3.0 nm) and thin (16-18 nm) ytterbium suicide films with some pinhole density (3×107- 1×108 cm-2) have been formed on Si(111) by solid phase epitaxy (SPE) and reactive deposition epitaxy (RDE) growth methods on templates. The stoichiometric ytterbium suicide (YbSi2) formation has shown in SPE grown films by AES and EELS data. Very thin Yb suicide films grown by RDE method had the silicon enrichment in YbSi2 suicide composition. The analysis of LEED data and AFM imaging has shown that ytterbium suicide films had non-oriented blocks with the polycrystalline structure. The analysis of scanning region length dependencies of the root mean square roughness deviation (σR(L)) for grown suicide films has shown that the formation of ytterbium suicide in SPE and RDE growth methods is determined by the surface diffusion of Yb atoms during the three-dimensional growth process. Optical functions (n, k, α, ɛ1, ɛ2, Im ɛ1-1, neff, ɛeff) of ytterbium silicide films grown on Si(1 1 1) have been calculated from transmittance and reflectance spectra in the energy range of 0.1-6.2 eV. Two nearly discrete absorption bands have been observed in the electronic structure of Yb silicide films with different composition, which connected with interband transitions on divalent and trivalent Yb states. It was established that the reflection coefficient minimum in R-spectra at energies higher 4.2 eV corresponds to the state density minimum in Yb suicide between divalent and trivalent Yb states. It was shown from optical data that Yb silicide films have the semi-metallic properties with low state densities at energies less 0.4 eV and high state densities at 0.5-2.5 eV.

The role of niobium carbide in radiation induced segregation behaviour of type 347 austenitic stainless steel

NASA Astrophysics Data System (ADS)

Ahmedabadi, Parag; Kain, Vivekanand; Gupta, Manu; Samajdar, I.; Sharma, S. C.; Bhagwat, P.; Chowdhury, R.

2011-08-01

The effect of niobium carbide precipitates on radiation induced segregation (RIS) behaviour in type 347 stainless steel was investigated. The material in the as-received condition was irradiated using double-loop 4.8 MeV protons at 300 °C for 0.43 dpa (displacement per atom). The RIS in the proton irradiated specimen was characterized using double-loop electrochemical potentiokinetic reactivation (DL-EPR) test followed by atomic force microscopic examination. The nature of variation of DL-EPR values with the depth matched with the variation of the calculated irradiation damage (dpa) with the depth. The attack on grain boundaries during EPR tests was negligible indicating absence of chromium depletion zones. The interface between niobium carbide and the matrix acts as a sink for point defects generated during irradiation and this had reduced point defect flux toward grain boundaries. The attack was noticed at a few large cluster of niobium carbide after the DL-EPR test at the depth of maximum attack for the irradiated specimen. Pit-like features were not observed within the matrix indicating the absence of chromium depletion regions within the matrix.

Use of Niobium High Strength Steels with 450 MPA Yield Strength for Construction

NASA Astrophysics Data System (ADS)

Silvestre, Leonardo; Langenberg, Peter; Amaral, Thiago; Carboni, Marcelo; Meira, Marcos; Jordão, Alexandre

This paper presents an actual case of a new industrial building at CBMM's plant in Araxá, Brazil as an example of lean design using microalloyed steels. The structure consists mostly of microalloyed ASTM A572 steel grades 65 and 50 instead of the conventional carbon manganese ASTM A36 steel. The application of grade 65 with more than 450 MPa of yield strength is an innovative solution for this type of construction in South America. A complete welding evaluation performed on the low carbon, niobium microalloyed grade 65 steel showed the welding properties and benefits. Niobium's effect of increasing strength and toughness simultaneously resulted in relevant savings in total steel consumption for the project. The paper also quantifies the expected savings in costs, energy and carbon dioxide emissions.

The impact of dispersion on selective laser melting of titanium and niobium fine powders mixture

NASA Astrophysics Data System (ADS)

Razin, A.; Ovchinnikov, V.; Akhmetshin, R.; Krinitcyn, M.; Fedorov, V.; Akhmetshina, V.

2016-11-01

This paper is dedicated to the study of selective laser melting process of metal powders. Experiments were performed in the Research Center Modern Manufacturing Technologies of TPU with the fine powders of titanium and niobium. The research was carried out on 3D laser printer designed at TPU. In the framework of experiments aimed at determining possibilities of obtaining niobium-titanium alloy by SLS (selective laser sintering) there were studied the basic processes of laser melting and their effect on the quality of final samples and products. We determined operation modes of 3D printers which allow obtaining high quality of printed sample surface. The research results show that rigid requirements related to powder dispersiveness and proportions are needed to achieve better quality of products.

Thin film integrated capacitors with sputtered-anodized niobium pentoxide dielectric for decoupling applications

NASA Astrophysics Data System (ADS)

Jacob, Susan

Electronics system miniaturization is a major driver for high-k materials. High-k materials in capacitors allow for high capacitance, enabling system miniaturization. Ta2O5 (k˜24) has been the dominant high-k material in the electronic industry for decoupling capacitors, filter capacitors, etc. In order to facilitate further system miniaturization, this project has investigated thin film integrated capacitors with Nb2O5 dielectric. Nb2O 5 has k˜41 and is a potential candidate for replacing Ta2O5. But, the presence of suboxides (NbO2 and NbO) in the dielectric deteriorates the electrical properties (leakage current, thermal instability of capacitance, etc.). Also, the high oxygen solubility of niobium results in oxygen diffusion from the dielectric to niobium metal, if any is present. The major purpose of this project was to check the ability of NbN as a diffusion barrier and fabricate thermally stable niobium capacitors. As a first step to produce niobium capacitors, the material characterizations of reactively sputtered Nb2O5 and NbN were done. Thickness and film composition, and crystal structures of the sputtered films were obtained and the deposition parameters for the desired stoichiometry were found. Also, anodized Nb2O5 was characterized for its stoichiometry and thickness. To study the effect of nitrides on capacitance and thermal stability, Ta2O5 capacitors were initially fabricated with and without TaN. The results showed that the nitride does not affect the capacitance, and that capacitors with TaN are stable up to 150°C. In the next step, niobium capacitors were first fabricated with anodized dielectric and the oxygen diffusion issues associated with capacitor processing were studied. Reactively sputtered Nb2O5 was anodized to form complete Nb2O5 (with few oxygen vacancies) and NbN was used to sandwich the dielectric. The capacitor fabrication was not successful due to the difficulties in anodizing the sputtered dielectric. Another method, anodizing reactively sputtered Nb2O5 and a thin layer of sputtered niobium metal yielded high yield (99%) capacitors. Capacitors were fabricated with and without NbN and the results showed 93% decrease in leakage for a capacitor with ˜2000 A dielectric when NbN was present in the structure. These capacitors could withstand 20 V and showed 2.7 muA leakage current at 5 V. These results were obtained after thermal storage at 100°C and 150°C in air for 168 hours at each temperature. Two set of experiments were performed using Ta2O5 dielectric: one to determine the effect of anodization end point on the thickness (capacitance) and the second to determine the effect of boiling the dielectric on functional yield. The anodization end point experiment showed that the final current of anodization along with the anodizing voltage determines the anodic oxide thickness. The lower the current, the thicker the films produced by anodization. Therefore, it was important to specify the final current along with the anodization voltage for oxide growth rate. The capacitors formed with boiled wafers showed better functional yield 3 out of 5 times compared with the unboiled wafer. Niobium anodization was studied for the Nb--->Nb 2O5 conversion ratio and the effect of anodization bath temperature on the oxide film; a color chart was prepared for thicknesses ranging from 1900 A - 5000 A. The niobium metal to oxide conversion ratio was found to change with temperature.

Isothermal and cyclic oxidation resistance of pack siliconized Mo-Si-B alloy

NASA Astrophysics Data System (ADS)

Majumdar, Sanjib

2017-08-01

Oxidation behaviour of MoSi2 coated Mo-9Si-8B-0.75Y (at.%) alloy has been investigated at three critical temperatures including 750, 900 and 1400 °C in static air. Thermogravimetric analysis (TGA) data indicates a remarkable improvement in the oxidation resistance of the silicide coated alloy in both isothermal and cyclic oxidation tests. The cross-sectional scanning electron microscopy and energy dispersive spectroscopic analysis reveal the occurrence of internal oxidation particularly at the crack fronts formed in the outer MoSi2 layer during thermal cycling. The dominant oxidation mechanisms at 750-900 °C and 1400 °C are identified. Development of MoB inner layer further improves the oxidation resistance of the silicide coated alloy.

Capping of rare earth silicide nanowires on Si(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Appelfeller, Stephan; Franz, Martin; Kubicki, Milan

The capping of Tb and Dy silicide nanowires grown on Si(001) was studied using scanning tunneling microscopy and cross-sectional high-resolution transmission electron microscopy. Several nanometers thick amorphous Si films deposited at room temperature allow an even capping, while the nanowires maintain their original structural properties. Subsequent recrystallization by thermal annealing leads to more compact nanowire structures and to troughs in the Si layer above the nanowires, which may even reach down to the nanowires in the case of thin Si films, as well as to V-shaped stacking faults forming along (111) lattice planes. This behavior is related to strain duemore » to the lattice mismatch between the Si overlayer and the nanowires.« less

A promising new thermoelectric material - Ruthenium silicide

NASA Technical Reports Server (NTRS)

Vining, Cronin B.; Mccormack, Joseph A.; Zoltan, Andrew; Zoltan, Leslie D.

1991-01-01

Experimental and theoretical efforts directed toward increasing thermoelectric figure of merit values by a factor of 2 or 3 have been encouraging in several respects. An accurate and detailed theoretical model developed for n-type silicon-germanium (SiGe) indicates that ZT values several times higher than currently available are expected under certain conditions. These new, high ZT materials are expected to be significantly different from SiGe, but not unreasonably so. Several promising candidate materials have been identified which may meet the conditions required by theory. One such candidate, ruthenium silicide, currently under development at JPL, has been estimated to have the potential to exhibit figure of merit values 4 times higher than conventional SiGe materials. Recent results are summarized.

Comparative study of metallic silicide-germanide orthorhombic MnP systems.

PubMed

Connétable, Damien; Thomas, Olivier

2013-09-04

We present a comparative study of the structural, energetic, electronic and elastic properties of MX type MnP systems (where X=Si or Ge, and M=Pt, Pd or Ni) using first-principles calculations. The optimized ground state properties of these systems are in excellent agreement with the experimental values. A detailed comparative study of the elastic properties of polycrystalline structures is also presented. We analyze the relationship between the composition and the properties of the systems. Finally, we present the properties of NiSi1-xGex alloys. We show that these properties depend linearly on the Ge content of the alloy. This work has important consequences for semiconductor devices in which silicides, germanides and alloys thereof are used as contact materials.

Europium Silicide – a Prospective Material for Contacts with Silicon

PubMed Central

Averyanov, Dmitry V.; Tokmachev, Andrey M.; Karateeva, Christina G.; Karateev, Igor A.; Lobanovich, Eduard F.; Prutskov, Grigory V.; Parfenov, Oleg E.; Taldenkov, Alexander N.; Vasiliev, Alexander L.; Storchak, Vyacheslav G.

2016-01-01

Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics. PMID:27211700

Europium Silicide - a Prospective Material for Contacts with Silicon.

PubMed

Averyanov, Dmitry V; Tokmachev, Andrey M; Karateeva, Christina G; Karateev, Igor A; Lobanovich, Eduard F; Prutskov, Grigory V; Parfenov, Oleg E; Taldenkov, Alexander N; Vasiliev, Alexander L; Storchak, Vyacheslav G

2016-05-23

Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics.

Optimized capping layers for EUV multilayers

DOEpatents

Bajt, Sasa [Livermore, CA; Folta, James A [Livermore, CA; Spiller, Eberhard A [Livermore, CA

2004-08-24

A new capping multilayer structure for EUV-reflective Mo/Si multilayers consists of two layers: A top layer that protects the multilayer structure from the environment and a bottom layer that acts as a diffusion barrier between the top layer and the structure beneath. One embodiment combines a first layer of Ru with a second layer of B.sub.4 C. Another embodiment combines a first layer of Ru with a second layer of Mo. These embodiments have the additional advantage that the reflectivity is also enhanced. Ru has the best oxidation resistance of all materials investigated so far. B.sub.4 C is an excellent barrier against silicide formation while the silicide layer formed at the Si boundary is well controlled.

Method for fabricating uranium alloy articles without shape memory effects

DOEpatents

Banker, John G.

1985-01-01

Uranium-rich niobium and niobium-zirconium alloys possess a characteristic known as shape memory effect wherein shaped articles of these alloys recover their original shape when heated. The present invention circumvents this memory behavior by forming the alloys into the desired configuration at elevated temperatures with "cold" matched dies and maintaining the shaped articles between the dies until the articles cool to ambient temperature.

Method for fabricating uranium alloy articles without shape memory effects

DOEpatents

Banker, J.G.

1980-05-21

Uranium-rich niobium and niobium-zirconium alloys possess a characteristic known as shape memory effect wherein shaped articles of these alloys recover their original shape when heated. The present invention circumvents this memory behavior by forming the alloys into the desired configuration at elevated temperatures with cold matched dies and maintaining the shaped articles between the dies until the articles cool to ambient temperature.

Chemical Vapor Synthesis of Niobium Aluminides

DTIC Science & Technology

1992-01-01

69 4.2.2 Deposition on Singly Supported Niobium Substrates ............ . . . ..... 72 4.3 DEPOSITION OF NbxSiy FROM H2, NbC15 , AND SICl4 ...direct CVD of NbxSiy from the hydrogen reduction of SiCl4 and NbCl5 is described by the overall reaction: xNbCl5 + ySiCl4 + (5x + 4y)/2 H2 - NbxSiy

Research and development for electropolishing of Nb for ILC accelerator cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kelley, Michael J.

The objectives of this project are to 1, Expand the scientific and technological understanding of the effect of post-treatment (electropolish, buffered chemical polish, low-temperature baking) on the surface of niobium; 2, Relate the knowledge to the performance of niobium superconducting radiofrequency accelerator cavities; and, 3, Thereby design and demonstrate an electropolish process that can be applied to complete cavities.

Evaluating the Surface Characteristics of Stainless Steel, TMA, Timolium, and Titanium-niobium Wires: An in vivo Scanning Electron Microscope Study.

PubMed

Babu, K Pradeep; Keerthi, V Naga; Madathody, Deepika; Prasanna, A Laxmi; Gopinath, Vidhya; Kumar, M Senthil; Kumar, A Nanda

2016-05-01

Recent metallurgical research and advancement in material science has benefited orthodontists in the selection of an appropriate wire size and alloy type, which is necessary to provide an optimum and predictable treatment results. The purpose of the study was to clinically evaluate and compare the surface characteristics of 16 x 22 stainless steel, Titanium molybdenum alloy, timolium, and titanium-niobium before and after placing them in a patient's mouth for 3 months using a scanning electron microscope (SEM). The total sample size was 40, which were divided into four groups (group 1 - stainless steel wires, 10 samples, group 2 - TMA wires, 10 samples, group 3 - timolium wires, 10 samples, and group 4 - titanium-niobium wires, 10 samples), and these were further subdivided into 5 each. The first subgroup of five samples was placed in the patient's mouth and was evaluated under SEM, and another subgroup of five samples was directly subjected to the SEM. Scanning electron microscopic evaluation of surface characteristics of unused 16 x 22 rectangular stainless steel wire under 500 x magnification showed an overall smooth surface. Stainless steel wire samples placed in the patient's mouth showed black hazy patches, which may be interoperated as areas of stress. TMA unused wires showed multiple small voids of areas and small craters with fewer elevated regions. The TMA wire samples placed in the patient's mouth showed black hazy patches and prominent ridges, making the wire rougher. Timolium unused archwires showed heavy roughness and voids, whereas wires tested in the patient's mouth showed homogeneous distribution of deep cracks and craters. Unused titanium-niobium archwires showed uniform prominent striations and ridges with occasional voids, whereas wires used in the patient's mouth showed prominent huge voids that could be interpreted as maximum stress areas. Stainless steel (group 1) used and unused wires showed smooth surface characteristics when compared with all the other three groups followed by timolium, which was superior to titanium-niobium wires and TMA wires. Timolium wires are superior to titanium-niobium wires and TMA wires.

CATALYTIC PROPERTIES OF SEMICONDUCTORS.

DTIC Science & Technology

SEMICONDUCTORS, CATALYSTS), (*CATALYSIS, REACTION KINETICS), (* SODIUM COMPOUNDS, TUNGSTATES), (*GALLIUM ALLOYS, ARSENIC ALLOYS), (*YTTERBIUM...COMPOUNDS, SILICIDES ), (*GERMANIUM, CATALYSIS), INTERNAL CONVERSION, EXCHANGE REACTIONS, HEAT OF ACTIVATION, THERMODYNAMICS, DEUTERIUM, POWDERS, SURFACES, HYDROGEN

Apatite grown in niobium by two-step plasma electrolytic oxidation.

PubMed

Pereira, Bruno Leandro; Lepienski, Carlos Maurício; Mazzaro, Irineu; Kuromoto, Neide Kazue

2017-08-01

Plasma electrolytic oxidation (PEO) of niobium plates were done electrochemically in two steps with electrolytes containing phosphorous and calcium being observed the formation of crystalline apatite. All samples were submitted to a first step of PEO using an electrolyte containing phosphate ions. The second oxidization step was made using three different electrolytes. Some samples were oxidized by PEO in electrolyte containing calcium, while in other samples it was used two mixtures of phosphoric acid and calcium acetate monohydrate solutions. Three different surface layers were obtained. The morphology and chemical composition of the films were analyzed by scanning electronic microscopy (SEM), and energy dispersive spectroscopy (EDS) respectively. It was observed that all samples submitted to two-step oxidation shown porous surface and a calcium and phosphorus rich layer. Average surface roughness (Ra) was measured by a profilometer remaining in the sub-micrometric range. The contact angle by sessile drop technique, using 1μL of distilled water was performed with an optical goniometer. It was verified a higher hydrophilicity in all surfaces compared to the polished niobium. Orthorhombic Nb 2 O 5 was identified by XRD in the oxide layer. Crystalline apatite was identified by XRD in surfaces after the second oxidation made with the Ca-rich electrolyte and a mixture of an electrolyte richer in Ca compared to P. These results indicate that a two-step oxidized niobium surface present great features for applications in the osseointegration processes: favorable chemical composition that increase the biocompatibility, the formation of crystalline niobium pentoxide (orthorhombic), high hydrophilicity and formation of crystalline calcium phosphate (apatite) under adequate electrolyte composition. Copyright © 2016 Elsevier B.V. All rights reserved.

Characterization of ingot material for SRF cavity production

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mondal, Jayanta; Ciovati, Gianluigi; Kneisel, Peter K.

In recent years, large-grain/single-crystal niobium has become a viable alternative to the standard fine grain (ASTM grain size>6), high purity (RRR ) niobium for the fabrication of high-performance SRF cavities for particle accelerators. In this contribution we present the results of a systematic study of the superconducting properties of samples obtained from four Niobium ingots (from CBMM, Brazil) of different purity. Measurements of bulk magnetization, surface pinning, critical temperature and thermal conductivity have been carried out on the samples subjected to different surface treatments such as buffered chemical polishing (BCP), 6000C heat treatment, and low temperature baking (LTB). A correlationmore » has been established between the LTB and the ratio . In addition, the phonon peak in the thermal conductivity data is suppressed by the presence of trapped magnetic vortices in the samples.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, S. K.; Mohan, S.; Bysakh, S.

The formation of surface oxide layer as well as compositional changes along the thickness for NiTi shape memory alloy thin films deposited by direct current magnetron sputtering at substrate temperature of 300 °C in the as-deposited condition as well as in the postannealed (at 600 °C) condition have been thoroughly studied by using secondary ion mass spectroscopy, x-ray photoelectron spectroscopy, and scanning transmission electron microscopy-energy dispersive x-ray spectroscopy techniques. Formation of titanium oxide (predominantly titanium dioxide) layer was observed in both as-deposited and postannealed NiTi films, although the oxide layer was much thinner (8 nm) in as-deposited condition. The depletionmore » of Ti and enrichment of Ni below the oxide layer in postannealed films also resulted in the formation of a graded microstructure consisting of titanium oxide, Ni{sub 3}Ti, and B2 NiTi. A uniform composition of B2 NiTi was obtained in the postannealed film only below a depth of 200–250 nm from the surface. Postannealed film also exhibited formation of a ternary silicide (Ni{sub x}Ti{sub y}Si) at the film–substrate interface, whereas no silicide was seen in the as-deposited film. The formation of silicide also caused a depletion of Ni in the film in a region ∼250–300 nm just above the film substrate interface.« less

Magnetic and magnetothermal studies of pure and doped gadolinium silicide nanoparticles for self-controlled hyperthermia applications

NASA Astrophysics Data System (ADS)

Alnasir, M. Hisham; Awan, M. S.; Manzoor, Sadia

2018-03-01

We report on magnetic and magnetothermal properties of undoped and doped gadolinium silicide (Gd5Si4) nanoparticles with the objective of simultaneously attaining high specific absorption rate (SAR) and low Curie temperature (TC) suitable for self-controlled hyperthermia applications for which TC ∼ 315-320 K. Pellets of doped gadolinium silicide Gd5(Si1-xGex)4 and (Gd1-xRx)5Si4 with R = Ho, Nd and Er and 0 ≤ x ≤ 0.35 were made by arc melting and reduced to nanoparticulate form by surfactant assisted ball milling. Structural and morphological studies were done using X-ray diffraction and scanning electron microscopy respectively. All samples show soft magnetic properties. At low fields there is a ferromagnetic to paramagnetic transition that reduces remanance and coercivity to zero making these materials very attractive for biomedical applications. Zero-field-cooled thermal demagnetization measurements showed that TC of these nanoparticles can be lowered to lie within the limits required for self-controlled hyperthermia by varying the dopant concentration. Specific absorption rates (SAR's) were obtained from magnetothermia measurements made in an ac magnetic field of amplitude 10 Oe and frequency 300 kHz. We have identified samples that have SAR values larger or comparable to those of magnetite and several ferrite nanoparticles, while having Curie temperatures that are low enough for self controlled hyperthermia applications.

Preliminary investigations on the use of uranium silicide targets for fission Mo-99 production

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cols, H.; Cristini, P.; Marques, R.

1997-08-01

The National Atomic Energy Commission (CNEA) of Argentine Republic owns and operates an installation for production of molybdenum-99 from fission products since 1985, and, since 1991, covers the whole national demand of this nuclide, carrying out a program of weekly productions, achieving an average activity of 13 terabecquerel per week. At present they are finishing an enlargement of the production plant that will allow an increase in the volume of production to about one hundred of terabecquerel. Irradiation targets are uranium/aluminium alloy with 90% enriched uranium with aluminium cladding. In view of international trends held at present for replacing highmore » enrichment uranium (HEU) for enrichment values lower than 20 % (LEU), since 1990 the authors are in contact with the RERTR program, beginning with tests to adapt their separation process to new irradiation target conditions. Uranium silicide (U{sub 3}Si{sub 2}) was chosen as the testing material, because it has an uranium mass per volume unit, so that it allows to reduce enrichment to a value of 20%. CNEA has the technology for manufacturing miniplates of uranium silicide for their purposes. In this way, equivalent amounts of Molybdenum-99 could be obtained with no substantial changes in target parameters and irradiation conditions established for the current process with Al/U alloy. This paper shows results achieved on the use of this new target.« less

Magnesium and Manganese Silicides For Efficient And Low Cost Thermo-Electric Power Generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trivedi, Sudhir B.; Kutcher, Susan W.; Rosemeier, Cory A.

2013-12-02

Thermoelectric Power Generation (TEPG) is the most efficient and commercially deployable power generation technology for harvesting wasted heat from such things as automobile exhausts, industrial furnaces, and incinerators, and converting it into usable electrical power. We investigated the materials magnesium silicide (Mg2Si) and manganese silicide (MnSi) for TEG. MgSi2 and MnSi are environmentally friendly, have constituent elements that are abundant in the earth's crust, non-toxic, lighter and cheaper. In Phase I, we successfully produced Mg2Si and MnSi material with good TE properties. We developed a novel technique to synthesize Mg2Si with good crystalline quality, which is normally very difficult duemore » to high Mg vapor pressure and its corrosive nature. We produced n-type Mg2Si and p-type MnSi nanocomposite pellets using FAST. Measurements of resistivity and voltage under a temperature gradient indicated a Seebeck coefficient of roughly 120 V/K on average per leg, which is quite respectable. Results indicated however, that issues related to bonding resulted in high resistivity contacts. Determining a bonding process and bonding material that can provide ohmic contact from room temperature to the operating temperature is an essential part of successful device fabrication. Work continues in the development of a process for reproducibly obtaining low resistance electrical contacts.« less

Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

NASA Technical Reports Server (NTRS)

George, T.; Fathauer, R. W.

1992-01-01

The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

Self-organised silicide nanodot patterning by medium-energy ion beam sputtering of Si(100): local correlation between the morphology and metal content.

PubMed

Redondo-Cubero, A; Galiana, B; Lorenz, K; Palomares, F J; Bahena, D; Ballesteros, C; Hernandez-Calderón, I; Vázquez, L

2016-11-04

We have produced self-organised silicide nanodot patterns by medium-energy ion beam sputtering (IBS) of silicon targets with a simultaneous and isotropic molybdenum supply. Atomic force microscopy (AFM) studies show that these patterns are qualitatively similar to those produced thus far at low ion energies. We have determined the relevance of the ion species on the pattern ordering and properties. For the higher ordered patterns produced by Xe(+) ions, the pattern wavelength depends linearly on the ion energy. The dot nanostructures are silicide-rich as assessed by x-ray photoelectron spectroscopy (XPS) and emerge in height due to their lower sputtering yield, as observed by electron microscopy. Remarkably, a long wavelength corrugation is observed on the surface which is correlated with both the Mo content and the dot pattern properties. Thus, as assessed by electron microscopy, the protrusions are Mo-rich with higher and more spaced dots on their surface whereas the valleys are Mo-poor with smaller dots that are closer to each other. These findings indicate that there is a correlation between the local metal content of the surface and the nanodot pattern properties both at the nanodot and the large corrugation scales. These results contribute to advancing the understanding of this interesting nanofabrication method and aid in developing a comprehensive theory of nanodot pattern formation and evolution.

Kinetics of silicide formation over a wide range of heating rates spanning six orders of magnitude

DOE Office of Scientific and Technical Information (OSTI.GOV)

Molina-Ruiz, Manel; Lopeandía, Aitor F.; Gonzalez-Silveira, Marta

Kinetic processes involving intermediate phase formation are often assumed to follow an Arrhenius temperature dependence. This behavior is usually inferred from limited data over narrow temperature intervals, where the exponential dependence is generally fully satisfied. However, direct evidence over wide temperature intervals is experimentally challenging and data are scarce. Here, we report a study of silicide formation between a 12 nm film of palladium and 15 nm of amorphous silicon in a wide range of heating rates, spanning six orders of magnitude, from 0.1 to 10{sup 5 }K/s, or equivalently more than 300 K of variation in reaction temperature. The calorimetric traces exhibit severalmore » distinct exothermic events related to interdiffusion, nucleation of Pd{sub 2}Si, crystallization of amorphous silicon, and vertical growth of Pd{sub 2}Si. Interestingly, the thickness of the initial nucleation layer depends on the heating rate revealing enhanced mass diffusion at the fastest heating rates during the initial stages of the reaction. In spite of this, the formation of the silicide strictly follows an Arrhenius temperature dependence over the whole temperature interval explored. A kinetic model is used to fit the calorimetric data over the complete heating rate range. Calorimetry is complemented by structural analysis through transmission electron microscopy and both standard and in-situ synchrotron X-ray diffraction.« less

Determination of niobium in rocks, ores and alloys by atomic-absorption spectrophotometry.

PubMed

Husler, J

1972-07-01

Niobium, in concentrations as low as 0.02% Nb(2)O(5), is determined in a variety of materials without separation or enrichment. Chemical and ionization interferences are controlled, and sensitivity is increased, by maintaining the iron, aluminium, hydrofluoric acid and potassium content within certain broad concentration limits. There is close agreement with the results of analyses by emission spectrographic, electron microprobe and X-ray fluorescence methods.

Effects of thermomechanical processing on strength and toughness of iron - 12-percent-nickel - reactive metal alloys at -196 C

NASA Technical Reports Server (NTRS)

Stephens, J. R.; Witzke, W. R.

1978-01-01

Thermomechanical processing (TMP) was evaluated as a method of strengthening normally tough iron-12-nickel-reactive metal alloys at cryogenic temperatures. Five iron-12 nickel alloys with reactive metal additions of aluminum, niobium, titanium, vanadium, and aluminum plus niobium were investigated. Primary evaluation was based on the yield strength and fracture toughness of the thermomechanically processed alloys at -196 C.

Bragg projection ptychography on niobium phase domain

DOE PAGES

Burdet, Nicolas; Shi, Xiaowen; Huang, Xiaojing; ...

2016-08-10

Here, we demonstrate that the highly sensitive phase-contrast properties of Bragg coherent diffraction measurements combined with the translational diversity of ptychography can provide a Bragg “dark field” imaging method capable of revealing the finger print of domain structure in metallic thin films. Experimental diffraction data was taken from a epitaxially grown niobium metallic thin film on sapphire; and analyzed with the help of a careful combination of implemented refinement mechanisms.

The hardness, microstructure, and pitting resistance of austenitic stainless steel Fe25Ni15Cr with the addition of tungsten, niobium, and vanadium

NASA Astrophysics Data System (ADS)

Prifiharni, Siska; Anwar, Moch. Syaiful; Nikitasari, Arini; Mabruri, Efendi

2018-05-01

In this work, the effect of 2% W, 1%Nb, and 1% V addition on the hardness, microstructure, and pitting resistance to austenitic stainless steel Fe25Ni15Cr was investigated. The specimens were prepared in induction melting furnace, followed by homogenizing at 1100°C for 24 h. Then, the specimens were solution treated at 975°C for 2 h followed by water quenching and aging at 725°C for 15 h. The hardness was measured by using Rockwell hardness B, and metallographic observation was conducted using optical microscope and SEM-EDS. The results show that the increament of W, Nb, and V in the austenitic stainless steel Fe25Ni15Crby increased the hardness. The metal carbide precipitation occurred at grain boundaries in niobium free alloy. The addition of Nb in the alloy promotes the Laves phase transformation, and addition of V increase Nb content in the Laves phase. Laves phase formation in alloys containing niobium during aging heat treatments lead to an increase in hardness. Addition of W, Nb, and V also increase pitting resistance of the Fe25Ni15Cr austenitic stainless steel. This can be attributed to an increasing level of niobium in the matrix.

Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

NASA Astrophysics Data System (ADS)

Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

2017-11-01

Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

Tensile strength and creep behaviour of austenitic stainless steel type 18Cr - 12Ni with niobium additions at 700°C

NASA Astrophysics Data System (ADS)

Sordi, V. L.; Bueno, L. O.

2010-07-01

The effect of niobium additions up to 2.36 wt% on the creep behavior of a series of seven extra low carbon 18Cr-12Ni austenitic stainless steels at 700°C has been investigated. Grain size and hardness measurements, hot tensile tests and constant stress creep tests from 90 to 180 MPa were carried out for each alloy, in the solution treated condition at 1050, 1200 and 1300°C followed by quench in water. The mechanical behavior at high temperature was related to the amount of NbC precipitation occurring during the tests. Solid solution and intermetallic compound effects were also considered. Creep data analysis was done to determine the parameters of the creep power-law equation dot epsilon = A.σn and the Monkman-Grant relation dot epsilon.tmR = K. Niobium-carbide precipitation in these steels reduces the secondary stage dependence of strain rate with applied stress, resulting in n-values which indicate the possibility of operation of various creep mechanisms. The creep strength during the secondary stage is primarily controlled by the amount of NbC available for precipitation. However, the rupture times increase progressively with niobium content, as the amount of undissolved carbide particles in grain boundaries and the Laves phase precipitation increase.

JSC Materials Laboratory Reproduction and Failure Analysis of Cracked Orbiter Reaction Control System Niobium Thruster Injectors

NASA Technical Reports Server (NTRS)

Castner, Willard L.; Jacobs, Jeremy B.

2006-01-01

In April 2004 a Space Shuttle Orbiter Reaction Control System (RCS) thruster was found to be cracked while undergoing a nozzle (niobium/C103 alloy) retrofit. As a failure resulting from an in-flight RCS thruster burn-through (initiated from a crack) could be catastrophic, an official Space Shuttle Program flight constraint was issued until flight safety could be adequately demonstrated. This paper describes the laboratory test program which was undertaken to reproduce the cracking in order to fully understand and bound the driving environments. The associated rationale developed to justify continued safe flight of the Orbiter RCS system is also described. The laboratory testing successfully reproduced the niobium cracking, and established specific bounding conditions necessary to cause cracking in the C103 thruster injectors. Each of the following conditions is necessary in combination together: 1) a mechanically disturbed / cold-worked free surface, 2) an externally applied sustained tensile stress near yield strength, 3) presence of fluorine-containing fluids on exposed tensile / cold-worked free surfaces, and 4) sustained exposure to temperatures greater than 400 F. As a result of this work, it was concluded that fluorine-containing materials (e.g. HF acid, Krytox , Brayco etc.) should be carefully controlled or altogether eliminated during processing of niobium and its alloys.

Modified fused silicide coatings for tantalum (Ta-10W) reentry heat shields

NASA Technical Reports Server (NTRS)

Packer, C. M.; Perkins, R. A.

1973-01-01

Results are presented of a program of research to develop a reliable, high performance, fused slurry silicide coating for the Ta-10W alloy. The effort was directed toward developing new and improved formulations for use at 2600 to 2800 F (1700 to 1811 K) in an atmospheric reentry thermal protection system with a 100-mission capability. Based on a thorough characterization of isothermal and cyclic oxidation behavior, bend transition temperatures, room- and elevated-temperature tensile properties, and creep behavior, a 2.5 Mn-33Ti-64.5Si coating (designated MTS) provides excellent protection for the Ta-10W alloy in simulated reentry environments. An extensive analysis of the oxidation behavior and characteristics of the MTS coating in terms of fundamental mechanisms also is presented.

Friction and wear of radiofrequency-sputtered borides, silicides, and carbides

NASA Technical Reports Server (NTRS)

Brainard, W. A.; Wheeler, D. R.

1978-01-01

The friction and wear properties of several refractory compound coatings were examined. These compounds were applied to 440 C bearing steel surfaces by radiofrequency (RF) sputtering. The refractory compounds were the titanium and molybdenum borides, the titanium and molybdenum silicides, and the titanium, molybdenum, and boron carbides. Friction testing was done with a pin-on-disk wear apparatus at loads from 0.1 to 5.0 newtons. Generally, the best wear properties were obtained when the coatings were bias sputtered onto 440 C disks that had been preoxidized. Adherence was improved because of the better bonding of the coatings to the iron oxide formed during preoxidation. As a class the carbides provided wear protection to the highest loads. Titanium boride coatings provided low friction and good wear properties to moderate loads.

Electronic structure of semiconducting alkali-metal silicides and germanides

NASA Astrophysics Data System (ADS)

Tegze, M.; Hafner, J.

1989-11-01

We present self-consistent linearized-muffin-tin-orbital calculations of the electronic structure of three alkali-metal germanides and silicides (KGe, NaGe, and NaSi). Like the alkali-metal-lead compounds investigated in our earlier work [M. Tegze and J. Hafner, Phys. Rev. B 39, 8263 (1989)] the Ge and Si compounds of the alkali metals form complex structures based on the packing of tetrahedral Ge4 and Si4 clusters. Our calculations show that all three compounds are narrow-gap semiconductors. The width of the energy gap depends on two main factors: the ratio of the intracluster to the intercluster interactions between the group-IV elements (which increases from Pb to Si) and the strength of the interactions between the alkali-metal atoms (which varies with the size ratio).

RECONDITIONING FUEL ELEMENTS

DOEpatents

Brandt, H.L.

1962-02-20

A process is given for decanning fuel elements that consist of a uranium core, an intermediate section either of bronze, silicon, Al-Si, and uranium silicide layers or of lead, Al-Si, and uranium silicide layers around said core, and an aluminum can bonded to said intermediate section. The aluminum can is dissolved in a solution of sodium hydroxide (9 to 20 wt%) and sodium nitrate (35 to 12 wt %), and the layers of the intermediate section are dissolved in a boiling sodium hydroxide solution of a minimum concentration of 50 wt%. (AEC) A method of selectively reducing plutonium oxides and the rare earth oxides but not uranium oxides is described which comprises placing the oxides in a molten solvent of zinc or cadmium and then adding metallic uranium as a reducing agent. (AEC)

Thermoelectric Properties of the Quasi-Binary MnSi1.73-FeSi2 System

NASA Astrophysics Data System (ADS)

Sadia, Yatir; Madar, Naor; Kaler, Ilan; Gelbstein, Yaniv

2015-06-01

The higher manganese silicides (HMS) are regarded as very attractive p-type thermoelectric materials for direct conversion of heat to electricity. To compete with other thermodynamic engines (e.g. the Stirling and Rankine cycles), however, the thermoelectric figure of merit of such silicides must be improved. HMS follow a complicated solidification reaction on cooling from the melt, which leads to formation of undesired secondary phases. Furthermore, the electronic carrier concentration of HMS is much higher than the optimum for thermoelectric applications and should be compensated by introduction of doping agents. In this research, the electronic donor action associated with substitution of HMS by FeSi2 was investigated. The effects of excess Si on phase distribution and thermoelectric properties are also discussed in detail.

Electronic structure of nickel silicide in subhalf-micron lines and blanket films: An x-ray absorption fine structures study at the Ni and Si L3,2 edge

NASA Astrophysics Data System (ADS)

Naftel, S. J.; Coulthard, I.; Sham, T. K.; Xu, D.-X.; Erickson, L.; Das, S. R.

1999-05-01

We report a Ni and Si L3,2-edge x-ray absorption near edge structures (XANES) study of nickel-silicon interaction in submicron (0.15 and 0.2 μm) lines on a n-Si(100) wafer as well as a series of well characterized Ni-Si blanket films. XANES measurements recorded in both total electron yield and soft x-ray fluorescence yield indicate that under the selected silicidation conditions, the more desirable low resistivity phase, NiSi, is indeed the dominant phase in the subhalf-micron lines although the formation of this phase is less complete as the line becomes narrower and this is accompanied by a Ni rich surface.

Structure determination of the ordered (2 × 1) phase of NiSi surface alloy on Ni(111) using low-energy electron diffraction

NASA Astrophysics Data System (ADS)

Sazzadur Rahman, Md.; Amirul Islam, Md.; Saha, Bidyut Baran; Nakagawa, Takeshi; Mizuno, Seigi

2015-12-01

The (2 × 1) structure of the two-dimensional nickel silicide surface alloy on Ni(111) was investigated using quantitative low-energy electron diffraction analysis. The unit cell of the determined silicide structure contains one Si and one Ni atom, corresponding to a chemical formula of NiSi. The Si atoms adopt substitutional face-centered cubic hollow sites on the Ni(111) substrate. The Ni-Si bond lengths were determined to be 2.37 and 2.34 Å. Both the alloy surface and the underlying first layers of Ni atoms exhibit slight corrugation. The Ni-Si interlayer distance is smaller than the Ni-Ni interlayer distance, which indicates that Si atoms and underlying Ni atoms strongly interact.

Oxidation at through-hole defects in fused slurry silicide coated columbium alloys FS-85 and Cb-752

NASA Technical Reports Server (NTRS)

Levine, S. R.

1973-01-01

Metal recession and interstitial contamination at 0.08-centimeter-diameter through-hole intentional defects in fused slurry silicide coated FS-85 and Cb-752 columbium alloys were studied to determine the tolerance of these materials to coating defects. Five external pressure reentry simulation exposures to 1320 C and 4.7 x 1,000 N/sq m (maximum pressure) resulted in a consumed metal zone having about twice the initial defect diameter for both alloys with an interstitial contamination zone extending about three to four initial defect diameters. Self-healing occurred in the 1.33 x 10 N/sq m, 1320 C exposures and to a lesser extent in internal pressure reentry cycles to 1320 C and 1.33 x 100 N/sq m (maximum pressure).

Development of Ambient Temperature Lithium-Ion Cells

NASA Technical Reports Server (NTRS)

Huang, C. K.; Ratnakumar, B. V.; Surampudi, S.; Halpert, G.

1994-01-01

Four types of materials have been evaluated as anodes for Li-ion cell fabrication. Among the materials evaluated, graphite and magnasium silicide were identified to be suitable candidate anode materials.

Subsurface Growth Of Silicide Structures In Silicon

NASA Technical Reports Server (NTRS)

Fathauer, Robert W.; George, Thomas; Pike, William T.; Schowalter, Leo

1993-01-01

Technique shows promise for fabrication of novel electronic, optoelectronic, and electro-optical devices. Experiments demonstrated feasibility of growing microscopic single-crystal CoSi2 structures beneath surfaces of Si substrates.

COATING COLUMBIUM FOR HIGH TEMPERATURES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sandoz, G.

1960-04-01

An investigation was conducted to find a coating for niobium to make it oxidation resistaat. The results obtained at the U. S. Naval Research Laboratory using zinc as a coating are reported. Tests conducted on molten zinc dipped niobium with an intentional flaw after coating, revealed a moderate hardness increase near the flaw. No indication of oxygen absorption or other embrittlement after 5 hours at 2000 deg F was observed in the coated metal. (B.O.G.)

Method of preparing composite superconducting wire

DOEpatents

Verhoeven, John D.; Gibson, Edwin D.; Finnemore, Douglas K.; Ostenson, Jerome E.; Schmidt, Frederick A.; Owen, Charles V.

1985-08-06

An improved method of preparing composite multifilament superconducting wire of Nb.sub.3 Sn in a copper matrix which eliminates the necessity of coating the drawn wire with tin. A generalized cylindrical billet of an alloy of copper containing at least 15 weight percent niobium, present in the copper as discrete, randomly distributed and oriented dendritic-shaped particles, is provided with at least one longitudinal opening which is filled with tin to form a composite drawing rod. The drawing rod is then drawn to form a ductile composite multifilament wire containing a filament of tin. The ductile wire containing the tin can then be wound into magnet coils or other devices before heating to diffuse the tin through the wire to react with the niobium forming Nb.sub.3 Sn. Also described is an improved method for making large billets of the copper-niobium alloy by consumable-arc casting.

Magnetic Property in Large Array Niobium Antidot Thin Films

NASA Astrophysics Data System (ADS)

Tinghui, Chen; Hsiang-Hsi, Kung; Wei-Li, Lee; Institute of Physics, Academia Sinica, Taipei, Taiwan Team

2014-03-01

In a superconducting ring, the total flux inside the ring is required to be an integer number of the flux quanta. Therefore, a supercurrent current can appear within the ring in order to satisfy this quantization rule, which gives rise to certain magnetic response. By using a special monolayer polymer/nanosphere hybrid we developed previously, we fabricated a series of superconducting niobium antidot thin films with different antidot diameters. The antidots form well-ordered triangular lattice with a lattice spacing about 200 nm and extend over an area larger than 1 cm2, which enables magnetic detections simply by a SQUID magnetometer. We observed magnetization oscillation with external magnetic field due to the supercurrent screening effect, where different features for large and small antidot thin films were found. Detailed size and temperature dependencies of the magnetization in niobium antidot nanostructures will be presented.

Molecular beam epitaxy growth of niobium oxides by solid/liquid state oxygen source and lithium assisted metal-halide chemistry

NASA Astrophysics Data System (ADS)

Tellekamp, M. Brooks; Greenlee, Jordan D.; Shank, Joshua C.; Doolittle, W. Alan

2015-09-01

In order to consistently grow high quality niobium oxides and lithium niobium oxides, a novel solid/liquid state oxygen source, LiClO4, has been implemented in a molecular beam epitaxy (MBE) system. LiClO4 is shown to decompose into both molecular and atomic oxygen upon heating. This allows oxidation rates similar to that of molecular oxygen but at a reduced overall beam flux, quantified by in situ Auger analysis. LiClO4 operation is decomposition limited to less than 400 °C, and other material limitations are identified. The design of a custom near-ambient NbCl5 effusion cell is presented, which improves both short and long term stability. Films of Nb oxidation state +2, +3, and +5 are grown using these new tools, including the multi-functional sub-oxide LiNbO2.

Fabrication and radio frequency test of large-area MgB 2 films on niobium substrates

DOE PAGES

Ni, Zhimao; Guo, Xin; Welander, Paul B.; ...

2017-01-19

Magnesium diboride (MgB 2) is a promising candidate material for superconducting radio frequency (RF) cavities because of its higher transition temperature and critical field compared with niobium. To meet the demand of RF test devices, the fabrication of large-area MgB 2 films on metal substrates is needed. Here, in this work, high quality MgB 2 films with 50 mm diameter were fabricated on niobium by using an improved HPCVD system at Peking University, and RF tests were carried out at SLAC National Accelerator Laboratory. The transition temperature is approximately 39.6 K and the RF surface resistance is about 120 μΩmore » at 4 K and 11.4 GHz. Finally, the fabrication processes, surface morphology, DC superconducting properties and RF tests of these large-area MgB 2 films are presented.« less

Analysis of the medium field Q-slope in superconducting cavities made of bulk niobium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gianluigi Ciovati; J. Halbritter

The quality factor of superconducting radio-frequency cavities made of high purity, bulk niobium increases with rf field in the medium field range (peak surface magnetic field between 20 and about 100 mT). The causes for this effect are not clear yet. The dependence of the surface resistance on the peak surface magnetic field is typically linear and quadratic. This contribution will present an analysis of the medium field Q-slope data measured on cavities treated with buffered chemical polishing (BCP) at Jefferson Lab, as function of different treatments such as post-purification and low-temperature baking. The data have been compared with amore » model involving a combination of heating and of hysteresis losses due to ''strong-links'' formed or weakened at niobium surfaces during oxidation, which correlate to {delta}{Delta}/kT{sub c} changes by baking.« less

Nanostructural features degrading the performance of superconducting radio frequency niobium cavities revealed by transmission electron microscopy and electron energy loss spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trenikhina, Y.; Romanenko, A.; Kwon, J.

Nanoscale defect structure within the magnetic penetration depth of ~100 nm is key to the performance limitations of niobium superconducting radio frequency cavities. Using a unique combination of advanced thermometry during cavity RF measurements, and TEM structural and compositional characterization of the samples extracted from cavity walls, we discover the existence of nanoscale hydrides in electropolished cavities limited by the high field Q slope, and show the decreased hydride formation in the electropolished cavity after 120°C baking. Furthermore, we demonstrate that adding 800°C hydrogen degassing followed by light buffered chemical polishing restores the hydride formation to the pre-120°C bake level.more » We also show absence of niobium oxides along the grain boundaries and the modifications of the surface oxide upon 120°C bake.« less

Nanostructural features degrading the performance of superconducting radio frequency niobium cavities revealed by transmission electron microscopy and electron energy loss spectroscopy

DOE PAGES

Trenikhina, Y.; Romanenko, A.; Kwon, J.; ...

2015-04-21

Nanoscale defect structure within the magnetic penetration depth of ~100 nm is key to the performance limitations of niobium superconducting radio frequency cavities. Using a unique combination of advanced thermometry during cavity RF measurements, and TEM structural and compositional characterization of the samples extracted from cavity walls, we discover the existence of nanoscale hydrides in electropolished cavities limited by the high field Q slope, and show the decreased hydride formation in the electropolished cavity after 120°C baking. Furthermore, we demonstrate that adding 800°C hydrogen degassing followed by light buffered chemical polishing restores the hydride formation to the pre-120°C bake level.more » We also show absence of niobium oxides along the grain boundaries and the modifications of the surface oxide upon 120°C bake.« less

Nanostructural features degrading the performance of superconducting radio frequency niobium cavities revealed by transmission electron microscopy and electron energy loss spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trenikhina, Y., E-mail: yuliatr@fnal.gov; Fermi National Accelerator Laboratory, Batavia, Illinois 60510; Romanenko, A., E-mail: aroman@fnal.gov

Nanoscale defect structure within the magnetic penetration depth of ∼100 nm is key to the performance limitations of niobium superconducting radio frequency cavities. Using a unique combination of advanced thermometry during cavity RF measurements, and TEM structural and compositional characterization of the samples extracted from cavity walls, we discover the existence of nanoscale hydrides in electropolished cavities limited by the high field Q slope, and show the decreased hydride formation in the electropolished cavity after 120 °C baking. Furthermore, we demonstrate that adding 800 °C hydrogen degassing followed by light buffered chemical polishing restores the hydride formation to the pre-120 °C bake level. Wemore » also show absence of niobium oxides along the grain boundaries and the modifications of the surface oxide upon 120 °C bake.« less

Fabrication and radio frequency test of large-area MgB 2 films on niobium substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ni, Zhimao; Guo, Xin; Welander, Paul B.

Magnesium diboride (MgB 2) is a promising candidate material for superconducting radio frequency (RF) cavities because of its higher transition temperature and critical field compared with niobium. To meet the demand of RF test devices, the fabrication of large-area MgB 2 films on metal substrates is needed. Here, in this work, high quality MgB 2 films with 50 mm diameter were fabricated on niobium by using an improved HPCVD system at Peking University, and RF tests were carried out at SLAC National Accelerator Laboratory. The transition temperature is approximately 39.6 K and the RF surface resistance is about 120 μΩmore » at 4 K and 11.4 GHz. Finally, the fabrication processes, surface morphology, DC superconducting properties and RF tests of these large-area MgB 2 films are presented.« less

Frequency optimization in the eddy current test for high purity niobium

NASA Astrophysics Data System (ADS)

Joung, Mijoung; Jung, Yoochul; Kim, Hyungjin

2017-01-01

The eddy current test (ECT) is frequently used as a non-destructive method to check for the defects of high purity niobium (RRR300, Residual Resistivity Ratio) in a superconducting radio frequency (SRF) cavity. Determining an optimal frequency corresponding to specific material properties and probe specification is a very important step. The ECT experiments for high purity Nb were performed to determine the optimal frequency using the standard sample of high purity Nb having artificial defects. The target depth was considered with the treatment step that the niobium receives as the SRF cavity material. The results were analysed via the selectivity that led to a specific result, depending on the size of the defects. According to the results, the optimal frequency was determined to be 200 kHz, and a few features of the ECT for the high purity Nb were observed.