Photomask etch system and process for 10nm technology node and beyond

NASA Astrophysics Data System (ADS)

Chandrachood, Madhavi; Grimbergen, Michael; Yu, Keven; Leung, Toi; Tran, Jeffrey; Chen, Jeff; Bivens, Darin; Yalamanchili, Rao; Wistrom, Richard; Faure, Tom; Bartlau, Peter; Crawford, Shaun; Sakamoto, Yoshifumi

2015-10-01

While the industry is making progress to offer EUV lithography schemes to attain ultimate critical dimensions down to 20 nm half pitch, an interim optical lithography solution to address an immediate need for resolution is offered by various integration schemes using advanced PSM (Phase Shift Mask) materials including thin e-beam resist and hard mask. Using the 193nm wavelength to produce 10nm or 7nm patterns requires a range of optimization techniques, including immersion and multiple patterning, which place a heavy demand on photomask technologies. Mask schemes with hard mask certainly help attain better selectivity and hence better resolution but pose integration challenges and defectivity issues. This paper presents a new photomask etch solution for attenuated phase shift masks that offers high selectivity (Cr:Resist > 1.5:1), tighter control on the CD uniformity with a 3sigma value approaching 1 nm and controllable CD bias (5-20 nm) with excellent CD linearity performance (<5 nm) down to the finer resolution. The new system has successfully demonstrated capability to meet the 10 nm node photomask CD requirements without the use of more complicated hard mask phase shift blanks. Significant improvement in post wet clean recovery performance was demonstrated by the use of advanced chamber materials. Examples of CD uniformity, linearity, and minimum feature size, and etch bias performance on 10 nm test site and production mask designs will be shown.

Post place and route design-technology co-optimization for scaling at single-digit nodes with constant ground rules

NASA Astrophysics Data System (ADS)

Mattii, Luca; Milojevic, Dragomir; Debacker, Peter; Berekovic, Mladen; Sherazi, Syed Muhammad Yasser; Chava, Bharani; Bardon, Marie Garcia; Schuddinck, Pieter; Rodopoulos, Dimitrios; Baert, Rogier; Gerousis, Vassilios; Ryckaert, Julien; Raghavan, Praveen

2018-01-01

Standard-cell design, technology choices, and place and route (P&R) efficiency are deeply interrelated in CMOS technology nodes below 10 nm, where lower number of tracks cells and higher pin densities pose increasingly challenging problems to the router in terms of congestion and pin accessibility. To evaluate and downselect the best solutions, a holistic design-technology co-optimization approach leveraging state-of-the-art P&R tools is thus necessary. We adopt such an approach using the imec N7 technology platform, with contacted poly pitch of 42 nm and tightest metal pitch of 32 nm, by comparing post P&R area of an IP block for different standard cell configurations, technology options, and cell height. Keeping the technology node and the set of ground rules unchanged, we demonstrate that a careful combination of these solutions can enable area gains of up to 50%, comparable with the area benefits of migrating to another node. We further demonstrate that these area benefits can be achieved at isoperformance with >20% reduced power. As at the end of the CMOS roadmap, conventional scaling enacted through pitch reduction is made more and more challenging by constraints imposed by lithography limits, material resistivity, manufacturability, and ultimately wafer cost, the approach shown herein offers a valid, attractive, and low-cost alternative.

A novel double patterning approach for 30nm dense holes

NASA Astrophysics Data System (ADS)

Hsu, Dennis Shu-Hao; Wang, Walter; Hsieh, Wei-Hsien; Huang, Chun-Yen; Wu, Wen-Bin; Shih, Chiang-Lin; Shih, Steven

2011-04-01

Double Patterning Technology (DPT) was commonly accepted as the major workhorse beyond water immersion lithography for sub-38nm half-pitch line patterning before the EUV production. For dense hole patterning, classical DPT employs self-aligned spacer deposition and uses the intersection of horizontal and vertical lines to define the desired hole patterns. However, the increase in manufacturing cost and process complexity is tremendous. Several innovative approaches have been proposed and experimented to address the manufacturing and technical challenges. A novel process of double patterned pillars combined image reverse will be proposed for the realization of low cost dense holes in 30nm node DRAM. The nature of pillar formation lithography provides much better optical contrast compared to the counterpart hole patterning with similar CD requirements. By the utilization of a reliable freezing process, double patterned pillars can be readily implemented. A novel image reverse process at the last stage defines the hole patterns with high fidelity. In this paper, several freezing processes for the construction of the double patterned pillars were tested and compared, and 30nm double patterning pillars were demonstrated successfully. A variety of different image reverse processes will be investigated and discussed for their pros and cons. An economic approach with the optimized lithography performance will be proposed for the application of 30nm DRAM node.

Molecular dynamics modeling framework for overcoming nanoshape retention limits of imprint lithography

NASA Astrophysics Data System (ADS)

Cherala, Anshuman; Sreenivasan, S. V.

2018-12-01

Complex nanoshaped structures (nanoshape structures here are defined as shapes enabled by sharp corners with radius of curvature <5 nm) have been shown to enable emerging nanoscale applications in energy, electronics, optics, and medicine. This nanoshaped fabrication at high throughput is well beyond the capabilities of advanced optical lithography. While the highest-resolution e-beam processes (Gaussian beam tools with non-chemically amplified resists) can achieve <5 nm resolution, this is only available at very low throughputs. Large-area e-beam processes, needed for photomasks and imprint templates, are limited to 18 nm half-pitch lines and spaces and 20 nm half-pitch hole patterns. Using nanoimprint lithography, we have previously demonstrated the ability to fabricate precise diamond-like nanoshapes with 3 nm radius corners over large areas. An exemplary shaped silicon nanowire ultracapacitor device was fabricated with these nanoshaped structures, wherein the half-pitch was 100 nm. The device significantly exceeded standard nanowire capacitor performance (by 90%) due to relative increase in surface area per unit projected area, enabled by the nanoshape. Going beyond the previous work, in this paper we explore the scaling of these nanoshaped structures to 10 nm half-pitch and below. At these scales a new "shape retention" resolution limit is observed due to polymer relaxation in imprint resists, which cannot be predicted with a linear elastic continuum model. An all-atom molecular dynamics model of the nanoshape structure was developed here to study this shape retention phenomenon and accurately predict the polymer relaxation. The atomistic framework is an essential modeling and design tool to extend the capability of imprint lithography to sub-10 nm nanoshapes. This framework has been used here to propose process refinements that maximize shape retention, and design template assist features (design for nanoshape retention) to achieve targeted nanoshapes.

Self-aligned blocking integration demonstration for critical sub-30nm pitch Mx level patterning with EUV self-aligned double patterning

NASA Astrophysics Data System (ADS)

Raley, Angélique; Lee, Joe; Smith, Jeffrey T.; Sun, Xinghua; Farrell, Richard A.; Shearer, Jeffrey; Xu, Yongan; Ko, Akiteru; Metz, Andrew W.; Biolsi, Peter; Devilliers, Anton; Arnold, John; Felix, Nelson

2018-04-01

We report a sub-30nm pitch self-aligned double patterning (SADP) integration scheme with EUV lithography coupled with self-aligned block technology (SAB) targeting the back end of line (BEOL) metal line patterning applications for logic nodes beyond 5nm. The integration demonstration is a validation of the scalability of a previously reported flow, which used 193nm immersion SADP targeting a 40nm pitch with the same material sets (Si3N4 mandrel, SiO2 spacer, Spin on carbon, spin on glass). The multi-color integration approach is successfully demonstrated and provides a valuable method to address overlay concerns and more generally edge placement error (EPE) as a whole for advanced process nodes. Unbiased LER/LWR analysis comparison between EUV SADP and 193nm immersion SADP shows that both integrations follow the same trend throughout the process steps. While EUV SADP shows increased LER after mandrel pull, metal hardmask open and dielectric etch compared to 193nm immersion SADP, the final process performance is matched in terms of LWR (1.08nm 3 sigma unbiased) and is only 6% higher than 193nm immersion SADP for average unbiased LER. Using EUV SADP enables almost doubling the line density while keeping most of the remaining processes and films unchanged, and provides a compelling alternative to other multipatterning integrations, which present their own sets of challenges.

State-of-the-art EUV materials and processes for the 7nm node and beyond

NASA Astrophysics Data System (ADS)

Buitrago, Elizabeth; Meeuwissen, Marieke; Yildirim, Oktay; Custers, Rolf; Hoefnagels, Rik; Rispens, Gijsbert; Vockenhuber, Michaela; Mochi, Iacopo; Fallica, Roberto; Tasdemir, Zuhal; Ekinci, Yasin

2017-03-01

Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) being the most likely candidate to manufacture electronic devices for future technology nodes is to be introduced in high volume manufacturing (HVM) at the 7 nm logic node, at least at critical lithography levels. With this impending introduction, it is clear that excellent resist performance at ultra-high printing resolutions (below 20 nm line/space L/S) is ever more pressing. Nonetheless, EUVL has faced many technical challenges towards this paradigm shift to a new lithography wavelength platform. Since the inception of chemically amplified resists (CARs) they have been the base upon which state-of-the art photoresist technology has been developed from. Resist performance as measured in terms of printing resolution (R), line edge roughness (LER), sensitivity (D or exposure dose) and exposure latitude (EL) needs to be improved but there are well known trade-off relationships (LRS trade-off) among these parameters for CARs that hamper their simultaneous enhancement. Here, we present some of the most promising EUVL materials tested by EUV interference lithography (EUV-IL) with the aim of resolving features down to 11 nm half-pitch (HP), while focusing on resist performance at 16 and 13 nm HP as needed for the 7 and 5 nm node, respectively. EUV-IL has enabled the characterization and development of new resist materials before commercial EUV exposure tools become available and is therefore a powerful research and development tool. With EUV-IL, highresolution periodic images can be printed by the interference of two or more spatially coherent beams through a transmission-diffraction grating mask. For this reason, our experiments have been performed by EUV-IL at Swiss Light Source (SLS) synchrotron facility located at the Paul Scherrer Institute (PSI). Having the opportunity to test hundreds of EUVL materials from vendors and research partners from all over the world, PSI is able to give a global update on some of the most promising materials tested.

Considerations for fine hole patterning for the 7nm node

NASA Astrophysics Data System (ADS)

Yaegashi, Hidetami; Oyama, Kenichi; Hara, Arisa; Natori, Sakurako; Yamauchi, Shohei; Yamato, Masatoshi; Koike, Kyohei

2016-03-01

One of the practical candidates to produce 7nm node logic devices is to use the multiple patterning with 193-immersion exposure. For the multiple patterning, it is important to evaluate the relation between the number of mask layer and the minimum pitch systematically to judge the device manufacturability. Although the number of the time of patterning, namely LE(Litho-Etch) ^ x-time, and overlay steps have to be reduced, there are some challenges in miniaturization of hole size below 20nm. Various process fluctuations on contact hole have a direct impact on device performance. According to the technical trend, 12nm diameter hole on 30nm-pitch hole will be needed on 7nm node. Extreme ultraviolet lithography (EUV) and Directed self-assembly (DSA) are attracting considerable attention to obtain small feature size pattern, however, 193-immersion still has the potential to extend optical lithography cost-effectively for sub-7nm node. The objective of this work is to study the process variation challenges and resolution in post-processing for the CD-bias control to meet sub-20nm diameter contact hole. Another pattern modulation is also demonstrated during post-processing step for hole shrink. With the realization that pattern fidelity and pattern placement management will limit scaling long before devices and interconnects fail to perform intrinsically, the talk will also outline how circle edge roughness (CER) and Local-CD uniformity can correct efficiency. On the other hand, 1D Gridded-Design-Rules layout (1D layout) has simple rectangular shapes. Also, we have demonstrated CD-bias modification on short trench pattern to cut grating line for its fabrication.

Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist process: III. Post exposure baking on quartz substrates

NASA Astrophysics Data System (ADS)

Kozawa, Takahiro

2015-09-01

Electron beam (EB) lithography is a key technology for the fabrication of photomasks for ArF immersion and extreme ultraviolet (EUV) lithography and molds for nanoimprint lithography. In this study, the temporal change in the chemical gradient of line-and-space patterns with a 7 nm quarter-pitch (7 nm space width and 21 nm line width) was calculated until it became constant, independently of postexposure baking (PEB) time, to clarify the feasibility of single nano patterning on quartz substrates using EB lithography with chemically amplified resist processes. When the quencher diffusion constant is the same as the acid diffusion constant, the maximum chemical gradient of the line-and-space pattern with a 7 nm quarter-pitch did not differ much from that with a 14 nm half-pitch under the condition described above. Also, from the viewpoint of process control, a low quencher diffusion constant is considered to be preferable for the fabrication of line-and-space patterns with a 7 nm quarter-pitch on quartz substrates.

64nm pitch metal1 double patterning metrology: CD and OVL control by SEMCD, image based overlay and diffraction based overlay

NASA Astrophysics Data System (ADS)

Ducoté, Julien; Dettoni, Florent; Bouyssou, Régis; Le-Gratiet, Bertrand; Carau, Damien; Dezauzier, Christophe

2015-03-01

Patterning process control of advanced nodes has required major changes over the last few years. Process control needs of critical patterning levels since 28nm technology node is extremely aggressive showing that metrology accuracy/sensitivity must be finely tuned. The introduction of pitch splitting (Litho-Etch-Litho-Etch) at 14FDSOInm node requires the development of specific metrologies to adopt advanced process control (for CD, overlay and focus corrections). The pitch splitting process leads to final line CD uniformities that are a combination of the CD uniformities of the two exposures, while the space CD uniformities are depending on both CD and OVL variability. In this paper, investigations of CD and OVL process control of 64nm minimum pitch at Metal1 level of 14FDSOI technology, within the double patterning process flow (Litho, hard mask etch, line etch) are presented. Various measurements with SEMCD tools (Hitachi), and overlay tools (KT for Image Based Overlay - IBO, and ASML for Diffraction Based Overlay - DBO) are compared. Metrology targets are embedded within a block instanced several times within the field to perform intra-field process variations characterizations. Specific SEMCD targets were designed for independent measurement of both line CD (A and B) and space CD (A to B and B to A) for each exposure within a single measurement during the DP flow. Based on those measurements correlation between overlay determined with SEMCD and with standard overlay tools can be evaluated. Such correlation at different steps through the DP flow is investigated regarding the metrology type. Process correction models are evaluated with respect to the measurement type and the intra-field sampling.

Self-aligned block technology: a step toward further scaling

NASA Astrophysics Data System (ADS)

Lazzarino, Frédéric; Mohanty, Nihar; Feurprier, Yannick; Huli, Lior; Luong, Vinh; Demand, Marc; Decoster, Stefan; Vega Gonzalez, Victor; Ryckaert, Julien; Kim, Ryan Ryoung Han; Mallik, Arindam; Leray, Philippe; Wilson, Chris; Boemmels, Jürgen; Kumar, Kaushik; Nafus, Kathleen; deVilliers, Anton; Smith, Jeffrey; Fonseca, Carlos; Bannister, Julie; Scheer, Steven; Tokei, Zsolt; Piumi, Daniele; Barla, Kathy

2017-04-01

In this work, we present and compare two integration approaches to enable self-alignment of the block suitable for the 5- nm technology node. The first approach is exploring the insertion of a spin-on metal-based material to memorize the first block and act as an etch stop layer in the overall integration. The second approach is evaluating the self-aligned block technology employing widely used organic materials and well-known processes. The concept and the motivation are discussed considering the effects on design and mask count as well as the impact on process complexity and EPE budget. We show the integration schemes and discuss the requirements to enable self-alignment. We present the details of materials and processes selection to allow optimal selective etches and we demonstrate the proof of concept using a 16- nm half-pitch BEOL vehicle. Finally, a study on technology insertion and cost estimation is presented.

Demonstration of electronic design automation flow for massively parallel e-beam lithography

NASA Astrophysics Data System (ADS)

Brandt, Pieter; Belledent, Jérôme; Tranquillin, Céline; Figueiro, Thiago; Meunier, Stéfanie; Bayle, Sébastien; Fay, Aurélien; Milléquant, Matthieu; Icard, Beatrice; Wieland, Marco

2014-07-01

For proximity effect correction in 5 keV e-beam lithography, three elementary building blocks exist: dose modulation, geometry (size) modulation, and background dose addition. Combinations of these three methods are quantitatively compared in terms of throughput impact and process window (PW). In addition, overexposure in combination with negative bias results in PW enhancement at the cost of throughput. In proximity effect correction by over exposure (PEC-OE), the entire layout is set to fixed dose and geometry sizes are adjusted. In PEC-dose to size (DTS) both dose and geometry sizes are locally optimized. In PEC-background (BG), a background is added to correct the long-range part of the point spread function. In single e-beam tools (Gaussian or Shaped-beam), throughput heavily depends on the number of shots. In raster scan tools such as MAPPER Lithography's FLX 1200 (MATRIX platform) this is not the case and instead of pattern density, the maximum local dose on the wafer is limiting throughput. The smallest considered half-pitch is 28 nm, which may be considered the 14-nm node for Metal-1 and the 10-nm node for the Via-1 layer, achieved in a single exposure with e-beam lithography. For typical 28-nm-hp Metal-1 layouts, it was shown that dose latitudes (size of process window) of around 10% are realizable with available PEC methods. For 28-nm-hp Via-1 layouts this is even higher at 14% and up. When the layouts do not reach the highest densities (up to 10∶1 in this study), PEC-BG and PEC-OE provide the capability to trade throughput for dose latitude. At the highest densities, PEC-DTS is required for proximity correction, as this method adjusts both geometry edges and doses and will reduce the dose at the densest areas. For 28-nm-hp lines critical dimension (CD), hole&dot (CD) and line ends (edge placement error), the data path errors are typically 0.9, 1.0 and 0.7 nm (3σ) and below, respectively. There is not a clear data path performance difference between the investigated PEC methods. After the simulations, the methods were successfully validated in exposures on a MAPPER pre-alpha tool. A 28-nm half pitch Metal-1 and Via-1 layouts show good performance in resist that coincide with the simulation result. Exposures of soft-edge stitched layouts show that beam-to-beam position errors up to ±7 nm specified for FLX 1200 show no noticeable impact on CD. The research leading to these results has been performed in the frame of the industrial collaborative consortium IMAGINE.

Immersion lithography: its history, current status and future prospects

NASA Astrophysics Data System (ADS)

Owa, Soichi; Nagasaka, Hiroyuki

2008-11-01

Since the 1980's, immersion exposure has been proposed several times. At the end of 1990's, however, these concepts were almost forgotten because other technologies, such as electron beam projection, EUVL, and 157 nm were believed to be more promising than immersion exposures. The current work in immersion lithography started in 2001 with the report of Switkes and Rothschild. Although their first proposal was at 157 nm wavelength, their report in the following year on 193 nm immersion with purified water turned out to be the turning point for the introduction of water-based 193 nm immersion lithography. In February, 2003, positive feasibility study results of 193 nm immersion were presented at the SPIE microlithography conference. Since then, the development of 193 nm immersion exposure tools accelerated. Currently (year 2008), multiple hyper NA (NA>1.0) scanners are generating mass production 45 nm half pitch devices in semiconductor manufacturing factories. As a future extension, high index immersion was studied over the past few years, but material development lagged more than expected, which resulted in the cancellation of high index immersion plans at scanner makers. Instead, double patterning, double dipole exposure, and customized illuminations techniques are expected as techniques to extend immersion for the 32 nm node and beyond.

Fabrication and testing of freestanding Si nanogratings for UV filtration on space-based particle sensors.

PubMed

Mukherjee, Pran; Zurbuchen, Thomas H; Guo, L Jay

2009-08-12

We demonstrate complete fabrication process integration and device performance of sturdy, self-supported transmission gratings in silicon. Gratings are patterned with nanoimprint lithography and aluminum liftoff on silicon-on-insulator wafers. Double-sided deep reactive ion etching (DRIE) creates freestanding 120 nm half-pitch gratings with 2000 nm depth and built-in 1 mm pitch bulk silicon support structures. Optical characterization demonstrates 10(-4) transmission of UV in the 190-250 nm band while a 25-30% geometric transparency allows particles to pass unimpeded for space plasma measurements.

Analysis method to determine and characterize the mask mean-to-target and uniformity specification

NASA Astrophysics Data System (ADS)

Lee, Sung-Woo; Leunissen, Leonardus H. A.; Van de Kerkhove, Jeroen; Philipsen, Vicky; Jonckheere, Rik; Lee, Suk-Joo; Woo, Sang-Gyun; Cho, Han-Ku; Moon, Joo-Tae

2006-06-01

The specification of the mask mean-to-target (MTT) and uniformity is related to functions as: mask error enhancement factor, dose sensitivity and critical dimension (CD) tolerances. The mask MTT shows a trade-off relationship with the uniformity. Simulations for the mask MTT and uniformity (M-U) are performed for LOGIC devices of 45 and 37 nm nodes according to mask type, illumination condition and illuminator polarization state. CD tolerances and after develop inspection (ADI) target CD's in the simulation are taken from the 2004 ITRS roadmap. The simulation results allow for much smaller tolerances in the uniformity and larger offsets in the MTT than the values as given in the ITRS table. Using the parameters in the ITRS table, the mask uniformity contributes to nearly 95% of total CDU budget for the 45 nm node, and is even larger than the CDU specification of the ITRS for the 37 nm node. We also compared the simulation requirements with the current mask making capabilities. The current mask manufacturing status of the mask uniformity is barely acceptable for the 45 nm node, but requires process improvements towards future nodes. In particular, for the 37 nm node, polarized illumination is necessary to meet the ITRS requirements. The current mask linearity deviates for pitches smaller than 300 nm, which is not acceptable even for the 45 nm node. More efforts on the proximity correction method are required to improve the linearity behavior.

Results from prototype die-to-database reticle inspection system

NASA Astrophysics Data System (ADS)

Mu, Bo; Dayal, Aditya; Broadbent, Bill; Lim, Phillip; Goonesekera, Arosha; Chen, Chunlin; Yeung, Kevin; Pinto, Becky

2009-03-01

A prototype die-to-database high-resolution reticle defect inspection system has been developed for 32nm and below logic reticles, and 4X Half Pitch (HP) production and 3X HP development memory reticles. These nodes will use predominantly 193nm immersion lithography (with some layers double patterned), although EUV may also be used. Many different reticle types may be used for these generations including: binary (COG, EAPSM), simple tritone, complex tritone, high transmission, dark field alternating (APSM), mask enhancer, CPL, and EUV. Finally, aggressive model based OPC is typically used, which includes many small structures such as jogs, serifs, and SRAF (sub-resolution assist features), accompanied by very small gaps between adjacent structures. The architecture and performance of the prototype inspection system is described. This system is designed to inspect the aforementioned reticle types in die-todatabase mode. Die-to-database inspection results are shown on standard programmed defect test reticles, as well as advanced 32nm logic, and 4X HP and 3X HP memory reticles from industry sources. Direct comparisons with currentgeneration inspection systems show measurable sensitivity improvement and a reduction in false detections.

Electrical comparison of iN7 EUV hybrid and EUV single patterning BEOL metal layers

NASA Astrophysics Data System (ADS)

Larivière, Stéphane; Wilson, Christopher J.; Kutrzeba Kotowska, Bogumila; Versluijs, Janko; Decoster, Stefan; Mao, Ming; van der Veen, Marleen H.; Jourdan, Nicolas; El-Mekki, Zaid; Heylen, Nancy; Kesters, Els; Verdonck, Patrick; Béral, Christophe; Van den Heuvel, Dieter; De Bisschop, Peter; Bekaert, Joost; Blanco, Victor; Ciofi, Ivan; Wan, Danny; Briggs, Basoene; Mallik, Arindam; Hendrickx, Eric; Kim, Ryoung-han; McIntyre, Greg; Ronse, Kurt; Bömmels, Jürgen; Tőkei, Zsolt; Mocuta, Dan

2018-03-01

The semiconductor scaling roadmap shows the continuous node to node scaling to push Moore's law down to the next generations. In that context, the foundry N5 node requires 32nm metal pitch interconnects for the advanced logic Back- End of Line (BEoL). 193immersion usage now requires self-aligned and/or multiple patterning technique combinations to enable such critical dimension. On the other hand, EUV insertion investigation shows that 32nm metal pitch is still a challenge but, related to process flow complexity, presents some clear motivations. Imec has already evaluated on test chip vehicles with different patterning approaches: 193i SAQP (Self-Aligned Quadruple Patterning), LE3 (triple patterning Litho Etch), tone inversion, EUV SE (Single Exposure) with SMO (Source-mask optimization). Following the run path in the technology development for EUV insertion, imec N7 platform (iN7, corresponding node to the foundry N5) is developed for those BEoL layers. In this paper, following technical motivation and development learning, a comparison between the iArF SAQP/EUV block hybrid integration scheme and a single patterning EUV flow is proposed. These two integration patterning options will be finally compared from current morphological and electrical criteria.

Integrated approach to improving local CD uniformity in EUV patterning

NASA Astrophysics Data System (ADS)

Liang, Andrew; Hermans, Jan; Tran, Timothy; Viatkina, Katja; Liang, Chen-Wei; Ward, Brandon; Chuang, Steven; Yu, Jengyi; Harm, Greg; Vandereyken, Jelle; Rio, David; Kubis, Michael; Tan, Samantha; Dusa, Mircea; Singhal, Akhil; van Schravendijk, Bart; Dixit, Girish; Shamma, Nader

2017-03-01

Extreme ultraviolet (EUV) lithography is crucial to enabling technology scaling in pitch and critical dimension (CD). Currently, one of the key challenges of introducing EUV lithography to high volume manufacturing (HVM) is throughput, which requires high source power and high sensitivity chemically amplified photoresists. Important limiters of high sensitivity chemically amplified resists (CAR) are the effects of photon shot noise and resist blur on the number of photons received and of photoacids generated per feature, especially at the pitches required for 7 nm and 5 nm advanced technology nodes. These stochastic effects are reflected in via structures as hole-to-hole CD variation or local CD uniformity (LCDU). Here, we demonstrate a synergy of film stack deposition, EUV lithography, and plasma etch techniques to improve LCDU, which allows the use of high sensitivity resists required for the introduction of EUV HVM. Thus, to improve LCDU to a level required by 5 nm node and beyond, film stack deposition, EUV lithography, and plasma etch processes were combined and co-optimized to enhance LCDU reduction from synergies. Test wafers were created by depositing a pattern transfer stack on a substrate representative of a 5 nm node target layer. The pattern transfer stack consisted of an atomically smooth adhesion layer and two hardmasks and was deposited using the Lam VECTOR PECVD product family. These layers were designed to mitigate hole roughness, absorb out-of-band radiation, and provide additional outlets for etch to improve LCDU and control hole CD. These wafers were then exposed through an ASML NXE3350B EUV scanner using a variety of advanced positive tone EUV CAR. They were finally etched to the target substrate using Lam Flex dielectric etch and Kiyo conductor etch systems. Metrology methodologies to assess dimensional metrics as well as chip performance and defectivity were investigated to enable repeatable patterning process development. Illumination conditions in EUV lithography were optimized to improve normalized image log slope (NILS), which is expected to reduce shot noise related effects. It can be seen that the EUV imaging contrast improvement can further reduce post-develop LCDU from 4.1 nm to 3.9 nm and from 2.8 nm to 2.6 nm. In parallel, etch processes were developed to further reduce LCDU, to control CD, and to transfer these improvements into the final target substrate. We also demonstrate that increasing post-develop CD through dose adjustment can enhance the LCDU reduction from etch. Similar trends were also observed in different pitches down to 40 nm. The solutions demonstrated here are critical to the introduction of EUV lithography in high volume manufacturing. It can be seen that through a synergistic deposition, lithography, and etch optimization, LCDU at a 40 nm pitch can be improved to 1.6 nm (3-sigma) in a target oxide layer and to 1.4 nm (3-sigma) at the photoresist layer.

Resist image quality control via acid diffusion constant and/or photodecomposable quencher concentration in the fabrication of 11 nm half-pitch line-and-space patterns using extreme-ultraviolet lithography

NASA Astrophysics Data System (ADS)

Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

2018-05-01

Extreme-ultraviolet (EUV) lithography will be applied to the high-volume production of semiconductor devices with 16 nm half-pitch resolution and is expected to be extended to that of devices with 11 nm half-pitch resolution. With the reduction in the feature sizes, the control of acid diffusion becomes a significant concern. In this study, the dependence of resist image quality on T PEB D acid and photodecomposable quencher concentration was investigated by the Monte Carlo method on the basis of the sensitization and reaction mechanisms of chemically amplified EUV resists. Here, T PEB and D acid are the postexposure baking (PEB) time and the acid diffusion constant, respectively. The resist image quality of 11 nm line-and-space patterns is discussed in terms of line edge roughness (LER) and stochastic defect generation. For the minimization of LER, it is necessary to design and control not only the photodecomposable quencher concentration but also T PEB D acid. In this case, D acid should be adjusted to be 0.3–1.5 nm2 s‑1 for a PEB time of 60 s with optimization of the balance among LER and stochastic pinching and bridging. Even if it is difficult to decrease D acid to the range of 0.3–1.5 nm2 s‑1, the image quality can still be controlled via only the photodecomposable quencher concentration, although LER and stochastic pinching and bridging are slightly increased. In this case, accurate control of the photodecomposable quencher concentration and the reduction in the initial standard deviation of the number of protected units are required.

Roughness and uniformity improvements on self-aligned quadruple patterning technique for 10nm node and beyond by wafer stress engineering

NASA Astrophysics Data System (ADS)

Liu, Eric; Ko, Akiteru; O'Meara, David; Mohanty, Nihar; Franke, Elliott; Pillai, Karthik; Biolsi, Peter

2017-05-01

Dimension shrinkage has been a major driving force in the development of integrated circuit processing over a number of decades. The Self-Aligned Quadruple Patterning (SAQP) technique is widely adapted for sub-10nm node in order to achieve the desired feature dimensions. This technique provides theoretical feasibility of multiple pitch-halving from 193nm immersion lithography by using various pattern transferring steps. The major concept of this approach is to a create spacer defined self-aligned pattern by using single lithography print. By repeating the process steps, double, quadruple, or octuple are possible to be achieved theoretically. In these small architectures, line roughness control becomes extremely important since it may contribute to a significant portion of process and device performance variations. In addition, the complexity of SAQP in terms of processing flow makes the roughness improvement indirective and ineffective. It is necessary to discover a new approach in order to improve the roughness in the current SAQP technique. In this presentation, we demonstrate a novel method to improve line roughness performances on 30nm pitch SAQP flow. We discover that the line roughness performance is strongly related to stress management. By selecting different stress level of film to be deposited onto the substrate, we can manipulate the roughness performance in line and space patterns. In addition, the impact of curvature change by applied film stress to SAQP line roughness performance is also studied. No significant correlation is found between wafer curvature and line roughness performance. We will discuss in details the step-by-step physical performances for each processing step in terms of critical dimension (CD)/ critical dimension uniformity (CDU)/line width roughness (LWR)/line edge roughness (LER). Finally, we summarize the process needed to reach the full wafer performance targets of LWR/LER in 1.07nm/1.13nm on 30nm pitch line and space pattern.

Toward the 5nm technology: layout optimization and performance benchmark for logic/SRAMs using lateral and vertical GAA FETs

NASA Astrophysics Data System (ADS)

Huynh-Bao, Trong; Ryckaert, Julien; Sakhare, Sushil; Mercha, Abdelkarim; Verkest, Diederik; Thean, Aaron; Wambacq, Piet

2016-03-01

In this paper, we present a layout and performance analysis of logic and SRAM circuits for vertical and lateral GAA FETs using 5nm (iN5) design rules. Extreme ultra-violet lithography (EUVL) processes are exploited to print the critical features: 32 nm gate pitch and 24 nm metal pitch. Layout architectures and patterning compromises for enabling the 5nm node will be discussed in details. A distinct standard-cell template for vertical FETs is proposed and elaborated for the first time. To assess electrical performances, a BSIM-CMG model has been developed and calibrated with TCAD simulations, which accounts for the quasi-ballistic transport in the nanowire channel. The results show that the inbound power rail layout construct for vertical devices could achieve the highest density while the interleaving diffusion template can maximize the port accessibility. By using a representative critical path circuit of a generic low power SoCs, it is shown that the VFET-based circuit is 40% more energy efficient than LFET designs at iso-performance. Regarding SRAMs, benefits given by vertical channel orientation in VFETs has reduced the SRAM area by 20%~30% compared to lateral SRAMs. A double exposures with EUV canner is needed to reach a minimum tip-to-tip (T2T) of 16 nm for middle-of-line (MOL) layers. To enable HD SRAMs with two metal layers, a fully self-aligned gate contact for LFETs and 2D routing of the top electrode for VFETs are required. The standby leakage of vertical SRAMs is 4~6X lower than LFET-based SRAMs at iso-performance and iso-area. The minimum operating voltage (Vmin) of vertical SRAMs is 170 mV lower than lateral SRAMs. A high-density SRAM bitcell of 0.014 um2 can be obtained for the iN5 technology node, which fully follows the SRAM scaling trend for the 45nm nodes and beyond.

Fast annealing DSA materials designed for sub-5 nm resolution

NASA Astrophysics Data System (ADS)

Deng, Hai; Li, Xuemiao; Peng, Yu; Zhou, Jianuo

2018-03-01

In recent years, high-χ block copolymers (BCPs) have been reported to achieve sub-5 nm resolution. These BCPs always require long annealing time at high annealing temperature, which may limit their implementation into semiconductor process. Since hot baking time in conventional semiconductor process is normally less than 3 minutes, how to shorter the thermal annealing time at lower temperature becomes a new topic for the sub-5 nm high-χ BCPs. In this manuscript, various fluoro-containing BCPs are synthesized by living anionic polymerization or atom transfer radical polymerization. The best BCP formed thermal equilibrium sub-5 nm nano domains after mere 1 min annealing at temperature lower than 100 °C, which is the fastest thermal annealing process reported so far. BCPs with various morphology and domain size are obtained by precise control of both the length and the molar ratio of the two blocks. The resulted smallest half-pitch of the BCPs are less than 5 nm in lamella and hexagonal morphologies. Linear and starshaped BCPs containing PMMA and fluoro-block are also synthesized, which also shows best phase separation into ca. 6 nm half-pitch, however, the annealing time is 1 hour at 180 °C.

Scatterometry-based metrology for SAQP pitch walking using virtual reference

NASA Astrophysics Data System (ADS)

Kagalwala, Taher; Vaid, Alok; Mahendrakar, Sridhar; Lenahan, Michael; Fang, Fang; Isbester, Paul; Shifrin, Michael; Etzioni, Yoav; Cepler, Aron; Yellai, Naren; Dasari, Prasad; Bozdog, Cornel

2016-03-01

Advanced technology nodes, 10nm and beyond, employing multi-patterning techniques for pitch reduction pose new process and metrology challenges in maintaining consistent positioning of structural features. Self-Aligned Quadruple Patterning (SAQP) process is used to create the Fins in FinFET devices with pitch values well below optical lithography limits. The SAQP process bares compounding effects from successive Reactive Ion Etch (RIE) and spacer depositions. These processes induce a shift in the pitch value from one fin compared to another neighboring fin. This is known as pitch walking. Pitch walking affects device performance as well as later processes which work on an assumption that there is consistent spacing between fins. In SAQP there are 3 pitch walking parameters of interest, each linked to specific process steps in the flow. These pitch walking parameters are difficult to discriminate at a specific process step by singular evaluation technique or even with reference metrology such as Transmission Electron Microscopy (TEM). In this paper we will utilize a virtual reference to generate a scatterometry model to measure pitch walk for SAQP process flow.

Measuring self-aligned quadruple patterning pitch walking with scatterometry-based metrology utilizing virtual reference

NASA Astrophysics Data System (ADS)

Kagalwala, Taher; Vaid, Alok; Mahendrakar, Sridhar; Lenahan, Michael; Fang, Fang; Isbester, Paul; Shifrin, Michael; Etzioni, Yoav; Cepler, Aron; Yellai, Naren; Dasari, Prasad; Bozdog, Cornel

2016-10-01

Advanced technology nodes, 10 nm and beyond, employing multipatterning techniques for pitch reduction pose new process and metrology challenges in maintaining consistent positioning of structural features. A self-aligned quadruple patterning (SAQP) process is used to create the fins in FinFET devices with pitch values well below optical lithography limits. The SAQP process bears the compounding effects from successive reactive ion etch and spacer depositions. These processes induce a shift in the pitch value from one fin compared to another neighboring fin. This is known as pitch walking. Pitch walking affects device performance as well as later processes, which work on an assumption that there is consistent spacing between fins. In SAQP, there are three pitch walking parameters of interest, each linked to specific process steps in the flow. These pitch walking parameters are difficult to discriminate at a specific process step by singular evaluation technique or even with reference metrology, such as transmission electron microscopy. We will utilize a virtual reference to generate a scatterometry model to measure pitch walk for SAQP process flow.

Evolution of roughness during the pattern transfer of high-chi, 10nm half-pitch, silicon-containing block copolymer structures

NASA Astrophysics Data System (ADS)

Blachut, Gregory; Sirard, Stephen M.; Liang, Andrew; Mack, Chris A.; Maher, Michael J.; Rincon-Delgadillo, Paulina A.; Chan, Boon Teik; Mannaert, Geert; Vandenberghe, Geert; Willson, C. Grant; Ellison, Christopher J.; Hymes, Diane

2018-03-01

A pattern transfer study was conducted to monitor the evolution of roughness in sub-10 nm half-pitch lines generated by the directed self-assembly (DSA) of a high-chi, silicon-containing block copolymer, poly(4-trimethylsilylstyrene)-block-poly(4-methoxystyrene). Unbiased roughness measurements were used to characterize the roughness of the structures before and after pattern transfer into silicon nitride. Parameters of the reactive ion etch process used as a dry development were systematically modified to minimize undesired line walking created by the DSA pre-pattern and to determine their impacts on roughness. The results of this study indicate that an optimized dry development can mitigate the effects of pre-pattern inhomogeneity, and that both dry development and pattern transfer steps effect the roughness of the final structures.

Manufacturability of the X Architecture at the 90-nm technology node

NASA Astrophysics Data System (ADS)

Smayling, Michael C.; Sarma, Robin C.; Nagata, Toshiyuki; Arora, Narain; Duane, Michael P.; Oemardani, Shiany; Shah, Santosh

2004-05-01

In this paper, we discuss the results from a test chip that demonstrate the manufacturability and integration-worthiness of the X Architecture at the 90-nm technology node. We discuss how a collaborative effort between the design and chip making communities used the current generation of mask, lithography, wafer processing, inspection and metrology equipment to create 45 degree wires in typical metal pitches for the upper layers on a 90-nm device in a production environment. Cadence Design Systems created the test structure design and chip validation tools for the project. Canon"s KrF ES3 and ArF AS2 scanners were used for the lithography. Applied Materials used its interconnect fabrication technologies to produce the multilayer copper, low-k interconnect on 300-mm wafers. The results were confirmed for critical dimension and defect levels using Applied Materials" wafer inspection and metrology systems.

High-numerical aperture extreme ultraviolet scanner for 8-nm lithography and beyond

NASA Astrophysics Data System (ADS)

Schoot, Jan van; Setten, Eelco van; Rispens, Gijsbert; Troost, Kars Z.; Kneer, Bernhard; Migura, Sascha; Neumann, Jens Timo; Kaiser, Winfried

2017-10-01

Current extreme ultraviolet (EUV) projection lithography systems exploit a projection lens with a numerical aperture (NA) of 0.33. It is expected that these will be used in mass production in the 2018/2019 timeframe. By then, the most difficult layers at the 7-nm logic and the mid-10-nm DRAM nodes will be exposed. These systems are a more economical alternative to multiple-exposure by 193 argon fluoride immersion scanners. To enable cost-effective shrink by EUV lithography down to 8-nm half pitch, a considerably larger NA is needed. As a result of the increased NA, the incidence angles of the light rays at the mask increase significantly. Consequently, the shadowing and the variation of the multilayer reflectivity deteriorate the aerial image contrast to unacceptably low values at the current 4× magnification. The only solution to reduce the angular range at the mask is to increase the magnification. Simulations show that the magnification has to be doubled to 8× to overcome the shadowing effects. Assuming that the mask infrastructure will not change the mask form factor, this would inevitably lead to a field size that is a quarter of the field size of the current 0.33-NA step and scan systems and reduce the throughput (TPT) of the high-NA scanner to a value below 100 wafers per hour unless additional measures are taken. This paper presents an anamorphic step and scan system capable of printing fields that are half the field size of the current full field. The anamorphic system has the potential to achieve a TPT in excess of 150 wafers per hour by increasing the transmission of the optics, as well as increasing the acceleration of the wafer stage and mask stage. This makes it an economically viable lithography solution.

The flash memory battle: How low can we go?

NASA Astrophysics Data System (ADS)

van Setten, Eelco; Wismans, Onno; Grim, Kees; Finders, Jo; Dusa, Mircea; Birkner, Robert; Richter, Rigo; Scherübl, Thomas

2008-03-01

With the introduction of the TWINSCAN XT:1900Gi the limit of the water based hyper-NA immersion lithography has been reached in terms of resolution. With a numerical aperture of 1.35 a single expose resolution of 36.5nm half pitch has been demonstrated. However the practical resolution limit in production will be closer to 40nm half pitch, without having to go to double patterning alike strategies. In the relentless Flash memory market the performance of the exposure tool is stretched to the limit for a competitive advantage and cost-effective product. In this paper we will present the results of an experimental study of the resolution limit of the NAND-Flash Memory Gate layer for a production-worthy process on the TWINSCAN XT:1900Gi. The entire gate layer will be qualified in terms of full wafer CD uniformity, aberration sensitivities for the different wordlines and feature-center placement errors for 38, 39, 40 and 43nm half pitch design rule. In this study we will also compare the performance of a binary intensity mask to a 6% attenuated phase shift mask and look at strategies to maximize Depth of Focus, and to desensitize the gate layer for lens aberrations and placement errors. The mask is one of the dominant contributors to the CD uniformity budget of the flash gate layer. Therefore the wafer measurements are compared to aerial image measurements of the mask using AIMSTM 45-193i to separate the mask contribution from the scanner contribution to the final imaging performance.

Line roughness improvements on self-aligned quadruple patterning by wafer stress engineering

NASA Astrophysics Data System (ADS)

Liu, Eric; Ko, Akiteru; Biolsi, Peter; Chae, Soo Doo; Hsieh, Chia-Yun; Kagaya, Munehito; Lee, Choongman; Moriya, Tsuyoshi; Tsujikawa, Shimpei; Suzuki, Yusuke; Okubo, Kazuya; Imai, Kiyotaka

2018-04-01

In integrated circuit and memory devices, size shrinkage has been the most effective method to reduce production cost and enable the steady increment of the number of transistors per unit area over the past few decades. In order to reduce the die size and feature size, it is necessary to minimize pattern formation in the advance node development. In the node of sub-10nm, extreme ultra violet lithography (EUV) and multi-patterning solutions based on 193nm immersionlithography are the two most common options to achieve the size requirement. In such small features of line and space pattern, line width roughness (LWR) and line edge roughness (LER) contribute significant amount of process variation that impacts both physical and electrical performances. In this paper, we focus on optimizing the line roughness performance by using wafer stress engineering on 30nm pitch line and space pattern. This pattern is generated by a self-aligned quadruple patterning (SAQP) technique for the potential application of fin formation. Our investigation starts by comparing film materials and stress levels in various processing steps and material selection on SAQP integration scheme. From the cross-matrix comparison, we are able to determine the best stack of film selection and stress combination in order to achieve the lowest line roughness performance while obtaining pattern validity after fin etch. This stack is also used to study the step-by-step line roughness performance from SAQP to fin etch. Finally, we will show a successful patterning of 30nm pitch line and space pattern SAQP scheme with 1nm line roughness performance.

Advances in dual-tone development for pitch frequency doubling

NASA Astrophysics Data System (ADS)

Fonseca, Carlos; Somervell, Mark; Scheer, Steven; Kuwahara, Yuhei; Nafus, Kathleen; Gronheid, Roel; Tarutani, Shinji; Enomoto, Yuuichiro

2010-04-01

Dual-tone development (DTD) has been previously proposed as a potential cost-effective double patterning technique1. DTD was reported as early as in the late 1990's2. The basic principle of dual-tone imaging involves processing exposed resist latent images in both positive tone (aqueous base) and negative tone (organic solvent) developers. Conceptually, DTD has attractive cost benefits since it enables pitch doubling without the need for multiple etch steps of patterned resist layers. While the concept for DTD technique is simple to understand, there are many challenges that must be overcome and understood in order to make it a manufacturing solution. Previous work by the authors demonstrated feasibility of DTD imaging for 50nm half-pitch features at 0.80NA (k1 = 0.21) and discussed challenges lying ahead for printing sub-40nm half-pitch features with DTD. While previous experimental results suggested that clever processing on the wafer track can be used to enable DTD beyond 50nm halfpitch, it also suggest that identifying suitable resist materials or chemistries is essential for achieving successful imaging results with novel resist processing methods on the wafer track. In this work, we present recent advances in the search for resist materials that work in conjunction with novel resist processing methods on the wafer track to enable DTD. Recent experimental results with new resist chemistries, specifically designed for DTD, are presented in this work. We also present simulation studies that help and support identifying resist properties that could enable DTD imaging, which ultimately lead to producing viable DTD resist materials.

A films based approach to intensity imbalance correction for 65nm node c:PSM

NASA Astrophysics Data System (ADS)

Cottle, Rand; Sixt, Pierre; Lassiter, Matt; Cangemi, Marc; Martin, Patrick; Progler, Chris

2005-11-01

Intensity imbalance between the 0 and π phase features of c:PSM cause gate CD control and edge placement problems. Strategies such as undercut, selective biasing, and combinations of undercut and bias are currently used in production to mitigate these problems. However, there are drawbacks to these strategies such as space CD delta through pitch, gate CD control through defocus, design rule restrictions, and reticle manufacturability. This paper investigates the application of an innovative films-based approach to intensity balancing known as the Transparent Etch Stop Layer (TESL). TESL, in addition to providing a host of reticle quality and manufacturability benefits, also can be tuned to significantly reduce imbalance. Rigorous 3D vector simulations and experimental data compare through pitch and defocus performance of TESL and conventional c:PSM for 65nm design rules.

Interactions of double patterning technology with wafer processing, OPC and design flows

NASA Astrophysics Data System (ADS)

Lucas, Kevin; Cork, Chris; Miloslavsky, Alex; Luk-Pat, Gerry; Barnes, Levi; Hapli, John; Lewellen, John; Rollins, Greg; Wiaux, Vincent; Verhaegen, Staf

2008-03-01

Double patterning technology (DPT) is one of the main options for printing logic devices with half-pitch less than 45nm; and flash and DRAM memory devices with half-pitch less than 40nm. DPT methods decompose the original design intent into two individual masking layers which are each patterned using single exposures and existing 193nm lithography tools. The results of the individual patterning layers combine to re-create the design intent pattern on the wafer. In this paper we study interactions of DPT with lithography, masks synthesis and physical design flows. Double exposure and etch patterning steps create complexity for both process and design flows. DPT decomposition is a critical software step which will be performed in physical design and also in mask synthesis. Decomposition includes cutting (splitting) of original design intent polygons into multiple polygons where required; and coloring of the resulting polygons. We evaluate the ability to meet key physical design goals such as: reduce circuit area; minimize rework; ensure DPT compliance; guarantee patterning robustness on individual layer targets; ensure symmetric wafer results; and create uniform wafer density for the individual patterning layers.

The application of phase grating to CLM technology for the sub-65nm node optical lithography

NASA Astrophysics Data System (ADS)

Yoon, Gi-Sung; Kim, Sung-Hyuck; Park, Ji-Soong; Choi, Sun-Young; Jeon, Chan-Uk; Shin, In-Kyun; Choi, Sung-Woon; Han, Woo-Sung

2005-06-01

As a promising technology for sub-65nm node optical lithography, CLM(Chrome-Less Mask) technology among RETs(Resolution Enhancement Techniques) for low k1 has been researched worldwide in recent years. CLM has several advantages, such as relatively simple manufacturing process and competitive performance compared to phase-edge PSM's. For the low-k1 lithography, we have researched CLM technique as a good solution especially for sub-65nm node. As a step for developing the sub-65nm node optical lithography, we have applied CLM technology in 80nm-node lithography with mesa and trench method. From the analysis of the CLM technology in the 80nm lithography, we found that there is the optimal shutter size for best performance in the technique, the increment of wafer ADI CD varied with pattern's pitch, and a limitation in patterning various shapes and size by OPC dead-zone - OPC dead-zone in CLM technique is the specific region of shutter size that dose not make the wafer CD increased more than a specific size. And also small patterns are easily broken, while fabricating the CLM mask in mesa method. Generally, trench method has better optical performance than mesa. These issues have so far restricted the application of CLM technology to a small field. We approached these issues with 3-D topographic simulation tool and found that the issues could be overcome by applying phase grating in trench-type CLM. With the simulation data, we made some test masks which had many kinds of patterns with many different conditions and analyzed their performance through AIMS fab 193 and exposure on wafer. Finally, we have developed the CLM technology which is free of OPC dead-zone and pattern broken in fabrication process. Therefore, we can apply the CLM technique into sub-65nm node optical lithography including logic devices.

REBL: design progress toward 16 nm half-pitch maskless projection electron beam lithography

NASA Astrophysics Data System (ADS)

McCord, Mark A.; Petric, Paul; Ummethala, Upendra; Carroll, Allen; Kojima, Shinichi; Grella, Luca; Shriyan, Sameet; Rettner, Charles T.; Bevis, Chris F.

2012-03-01

REBL (Reflective Electron Beam Lithography) is a novel concept for high speed maskless projection electron beam lithography. Originally targeting 45 nm HP (half pitch) under a DARPA funded contract, we are now working on optimizing the optics and architecture for the commercial silicon integrated circuit fabrication market at the equivalent of 16 nm HP. The shift to smaller features requires innovation in most major subsystems of the tool, including optics, stage, and metrology. We also require better simulation and understanding of the exposure process. In order to meet blur requirements for 16 nm lithography, we are both shrinking the pixel size and reducing the beam current. Throughput will be maintained by increasing the number of columns as well as other design optimizations. In consequence, the maximum stage speed required to meet wafer throughput targets at 16 nm will be much less than originally planned for at 45 nm. As a result, we are changing the stage architecture from a rotary design to a linear design that can still meet the throughput requirements but with more conventional technology that entails less technical risk. The linear concept also allows for simplifications in the datapath, primarily from being able to reuse pattern data across dies and columns. Finally, we are now able to demonstrate working dynamic pattern generator (DPG) chips, CMOS chips with microfabricated lenslets on top to prevent crosstalk between pixels.

Large area and deep sub-wavelength interference lithography employing odd surface plasmon modes.

PubMed

Liu, Liqin; Luo, Yunfei; Zhao, Zeyu; Zhang, Wei; Gao, Guohan; Zeng, Bo; Wang, Changtao; Luo, Xiangang

2016-07-28

In this paper, large area and deep sub-wavelength interference patterns are realized experimentally by using odd surface plasmon modes in the metal/insulator/metal structure. Theoretical investigation shows that the odd modes possesses much higher transversal wave vector and great inhibition of tangential electric field components, facilitating surface plasmon interference fringes with high resolution and contrast in the measure of electric field intensity. Interference resist patterns with 45 nm (∼λ/8) half-pitch, 50 nm depth, and area size up to 20 mm × 20 mm were obtained by using 20 nm Al/50 nm photo resist/50 nm Al films with greatly reduced surface roughness and 180 nm pitch exciting grating fabricated with conventional laser interference lithography. Much deeper resolution down to 19.5 nm is also feasible by decreasing the thickness of PR. Considering that no requirement of expensive EBL or FIB tools are employed, it provides a cost-effective way for large area and nano-scale fabrication.

LENS (lithography enhancement toward nano scale): a European project to support double exposure and double patterning technology development

NASA Astrophysics Data System (ADS)

Cantu, Pietro; Baldi, Livio; Piacentini, Paolo; Sytsma, Joost; Le Gratiet, Bertrand; Gaugiran, Stéphanie; Wong, Patrick; Miyashita, Hiroyuki; Atzei, Luisa R.; Buch, Xavier; Verkleij, Dick; Toublan, Olivier; Perez-Murano, Francesco; Mecerreyes, David

2010-04-01

In 2009 a new European initiative on Double Patterning and Double Exposure lithography process development was started in the framework of the ENIAC Joint Undertaking. The project, named LENS (Lithography Enhancement Towards Nano Scale), involves twelve companies from five different European Countries (Italy, Netherlands, France, Belgium Spain; includes: IC makers (Numonyx and STMicroelectronics), a group of equipment and materials companies (ASML, Lam Research srl, JSR, FEI), a mask maker (Dai Nippon Photomask Europe), an EDA company (Mentor Graphics) and four research and development institutes (CEA-Leti, IMEC, Centro Nacional de Microelectrónica, CIDETEC). The LENS project aims to develop and integrate the overall infrastructure required to reach patterning resolutions required by 32nm and 22nm technology nodes through the double patterning and pitch doubling technologies on existing conventional immersion exposure tools, with the purpose to allow the timely development of 32nm and 22nm technology nodes for memories and logic devices, providing a safe alternative to EUV, Higher Refraction Index Fluids Immersion Lithography and maskless lithography, which appear to be still far from maturity. The project will cover the whole lithography supply chain including design, masks, materials, exposure tools, process integration, metrology and its final objective is the demonstration of 22nm node patterning on available 1.35 NA immersion tools on high complexity mask set.

Driving down defect density in composite EUV patterning film stacks

NASA Astrophysics Data System (ADS)

Meli, Luciana; Petrillo, Karen; De Silva, Anuja; Arnold, John; Felix, Nelson; Johnson, Richard; Murray, Cody; Hubbard, Alex; Durrant, Danielle; Hontake, Koichi; Huli, Lior; Lemley, Corey; Hetzer, Dave; Kawakami, Shinichiro; Matsunaga, Koichi

2017-03-01

Extreme ultraviolet lithography (EUVL) technology is one of the leading candidates for enabling the next generation devices, for 7nm node and beyond. As the technology matures, further improvement is required in the area of blanket film defectivity, pattern defectivity, CD uniformity, and LWR/LER. As EUV pitch scaling approaches sub 20 nm, new techniques and methods must be developed to reduce the overall defectivity, mitigate pattern collapse and eliminate film related defect. IBM Corporation and Tokyo Electron Limited (TELTM) are continuously collaborating to develop manufacturing quality processes for EUVL. In this paper, we review key defectivity learning required to enable 7nm node and beyond technology. We will describe ongoing progress in addressing these challenges through track-based processes (coating, developer, baking), highlighting the limitations of common defect detection strategies and outlining methodologies necessary for accurate characterization and mitigation of blanket defectivity in EUV patterning stacks. We will further discuss defects related to pattern collapse and thinning of underlayer films.

Layout decomposition of self-aligned double patterning for 2D random logic patterning

NASA Astrophysics Data System (ADS)

Ban, Yongchan; Miloslavsky, Alex; Lucas, Kevin; Choi, Soo-Han; Park, Chul-Hong; Pan, David Z.

2011-04-01

Self-aligned double pattering (SADP) has been adapted as a promising solution for sub-30nm technology nodes due to its lower overlay problem and better process tolerance. SADP is in production use for 1D dense patterns with good pitch control such as NAND Flash memory applications, but it is still challenging to apply SADP to 2D random logic patterns. The favored type of SADP for complex logic interconnects is a two mask approach using a core mask and a trim mask. In this paper, we first describe layout decomposition methods of spacer-type double patterning lithography, then report a type of SADP compliant layouts, and finally report SADP applications on Samsung 22nm SRAM layout. For SADP decomposition, we propose several SADP-aware layout coloring algorithms and a method of generating lithography-friendly core mask patterns. Experimental results on 22nm node designs show that our proposed layout decomposition for SADP effectively decomposes any given layouts.

Advanced in-line metrology strategy for self-aligned quadruple patterning

NASA Astrophysics Data System (ADS)

Chao, Robin; Breton, Mary; L'herron, Benoit; Mendoza, Brock; Muthinti, Raja; Nelson, Florence; De La Pena, Abraham; Le, Fee li; Miller, Eric; Sieg, Stuart; Demarest, James; Gin, Peter; Wormington, Matthew; Cepler, Aron; Bozdog, Cornel; Sendelbach, Matthew; Wolfling, Shay; Cardinal, Tom; Kanakasabapathy, Sivananda; Gaudiello, John; Felix, Nelson

2016-03-01

Self-Aligned Quadruple Patterning (SAQP) is a promising technique extending the 193-nm lithography to manufacture structures that are 20nm half pitch or smaller. This process adopts multiple sidewall spacer image transfers to split a rather relaxed design into a quarter of its original pitch. Due to the number of multiple process steps required for the pitch splitting in SAQP, the process error propagates through each deposition and etch, and accumulates at the final step into structure variations, such as pitch walk and poor critical dimension uniformity (CDU). They can further affect the downstream processes and lower the yield. The impact of this error propagation becomes significant for advanced technology nodes when the process specifications of device design CD requirements are at nanometer scale. Therefore, semiconductor manufacturing demands strict in-line process control to ensure a high process yield and improved performance, which must rely on precise measurements to enable corrective actions and quick decision making for process development. This work aims to provide a comprehensive metrology solution for SAQP. During SAQP process development, the challenges in conventional in-line metrology techniques start to surface. For instance, critical-dimension scanning electron microscopy (CDSEM) is commonly the first choice for CD and pitch variation control. However, it is found that the high aspect ratio at mandrel level processes and the trench variations after etch prevent the tool from extracting the true bottom edges of the structure in order to report the position shift. On the other hand, while the complex shape and variations can be captured with scatterometry, or optical CD (OCD), the asymmetric features, such as pitch walk, show low sensitivity with strong correlations in scatterometry. X-ray diffraction (XRD) is known to provide useful direct measurements of the pitch walk in crystalline arrays, yet the data analysis is influenced by the incoming geometry and must be used carefully. A successful implementation of SAQP process control for yield improvement requires the metrology issues to be addressed. By optimizing the measurement parameters and beam configurations, CDSEM measurements distinguish each of the spaces corresponding to the upstream mandrel processes and report their CDs separately to feed back to the process team for the next development cycle. We also utilize the unique capability in scatterometry to measure the structure details in-line and implement a "predictive" process control, which shows a good correlation between the "predictive" measurement and the cross-sections from our design of experiments (DOE). The ability to measure the pitch walk in scatterometry was also demonstrated. This work also explored the frontier of in-line XRD capability by enabling an automatic RSM fitting on tool to output pitch walk values. With these advances in metrology development, we are able to demonstrate the impacts of in-line monitoring in the SAQP process, to shorten the patterning development learning cycle to improve the yield.

Sensitivity enhancement of chemically amplified resists and performance study using EUV interference lithography

NASA Astrophysics Data System (ADS)

Buitrago, Elizabeth; Nagahara, Seiji; Yildirim, Oktay; Nakagawa, Hisashi; Tagawa, Seiichi; Meeuwissen, Marieke; Nagai, Tomoki; Naruoka, Takehiko; Verspaget, Coen; Hoefnagels, Rik; Rispens, Gijsbert; Shiraishi, Gosuke; Terashita, Yuichi; Minekawa, Yukie; Yoshihara, Kosuke; Oshima, Akihiro; Vockenhuber, Michaela; Ekinci, Yasin

2016-03-01

Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) is the most promising candidate to manufacture electronic devices for future technology nodes in the semiconductor industry. Nonetheless, EUVL still faces many technological challenges as it moves toward high-volume manufacturing (HVM). A key bottleneck from the tool design and performance point of view has been the development of an efficient, high power EUV light source for high throughput production. Consequently, there has been extensive research on different methodologies to enhance EUV resist sensitivity. Resist performance is measured in terms of its ultimate printing resolution, line width roughness (LWR), sensitivity (S or best energy BE) and exposure latitude (EL). However, there are well-known fundamental trade-off relationships (LRS trade-off) among these parameters for chemically amplified resists (CARs). Here we present early proof-of-principle results for a multi-exposure lithography process that has the potential for high sensitivity enhancement without compromising other important performance characteristics by the use of a Photosensitized Chemically Amplified Resist (PSCAR). With this method, we seek to increase the sensitivity by combining a first EUV pattern exposure with a second UV flood exposure (λ = 365 nm) and the use of a PSCAR. In addition, we have evaluated over 50 different state-of-the-art EUV CARs. Among these, we have identified several promising candidates that simultaneously meet sensitivity, LWR and EL high performance requirements with the aim of resolving line space (L/S) features for the 7 and 5 nm logic node (16 nm and 13 nm half-pitch HP, respectively) for HVM. Several CARs were additionally found to be well resolved down to 12 nm and 11 nm HP with minimal pattern collapse and bridging, a remarkable feat for CARs. Finally, the performance of two negative tone state-of-the-art alternative resist platforms previously investigated was compared to the CAR performance at and below 16 nm HP resolution, demonstrating the need for alternative resist solutions at 13 nm resolution and below. EUV interference lithography (IL) has provided and continues to provide a simple yet powerful platform for academic and industrial research enabling the characterization and development of new resist materials before commercial EUV exposure tools become available. Our experiments have been performed at the EUV-IL set-up in the Swiss Light Source (SLS) synchrotron facility located at the Paul Scherrer Institute (PSI).

Rigorous assessment of patterning solution of metal layer in 7 nm technology node

NASA Astrophysics Data System (ADS)

Gao, Weimin; Ciofi, Ivan; Saad, Yves; Matagne, Philippe; Bachmann, Michael; Gillijns, Werner; Lucas, Kevin; Demmerle, Wolfgang; Schmoeller, Thomas

2016-01-01

In a 7 nm node (N7), the logic design requires a critical poly pitch of 42 to 45 nm and a metal 1 (M1) pitch of 28 to 32 nm. Such high-pattern density pushes the 193 immersion lithography solution toward its limit and also brings extremely complex patterning scenarios. The N7 M1 layer may require a self-aligned quadruple patterning (SAQP) with a triple litho-etch (LE3) block process. Therefore, the whole patterning process flow requires multiple exposure+etch+deposition processes and each step introduces a particular impact on the pattern profiles and the topography. In this study, we have successfully integrated a simulation tool that enables emulation of the whole patterning flow with realistic process-dependent three-dimensional (3-D) profile and topology. We use this tool to study the patterning process variations of the N7 M1 layer including the overlay control, the critical dimension uniformity budget, and the lithographic process window (PW). The resulting 3-D pattern structure can be used to optimize the process flow, verify design rules, extract parasitics, and most importantly, simulate the electric field, and identify hot spots for dielectric reliability. As an example application, the maximum electric field at M1 tip-to-tip, which is one of the most critical patterning locations, has been simulated and extracted. The approach helps to investigate the impact of process variations on dielectric reliability. We have also assessed the alternative M1 patterning flow with a single exposure block using extreme ultraviolet lithography (EUVL) and analyzed its advantages compared to the LE3 block approach.

From powerful research platform for industrial EUV photoresist development, to world record resolution by photolithography: EUV interference lithography at the Paul Scherrer Institute

NASA Astrophysics Data System (ADS)

Buitrago, Elizabeth; Fallica, Roberto; Fan, Daniel; Karim, Waiz; Vockenhuber, Michaela; van Bokhoven, Jeroen A.; Ekinci, Yasin

2016-09-01

Extreme ultraviolet interference lithography (EUV-IL, λ = 13.5 nm) has been shown to be a powerful technique not only for academic, but also for industrial research and development of EUV materials due to its relative simplicity yet record high-resolution patterning capabilities. With EUV-IL, it is possible to pattern high-resolution periodic images to create highly ordered nanostructures that are difficult or time consuming to pattern by electron beam lithography (EBL) yet interesting for a wide range of applications such as catalysis, electronic and photonic devices, and fundamental materials analysis, among others. Here, we will show state-of the-art research performed using the EUV-IL tool at the Swiss Light Source (SLS) synchrotron facility in the Paul Scherrer Institute (PSI). For example, using a grating period doubling method, a diffraction mask capable of patterning a world record in photolithography of 6 nm half-pitch (HP), was produced. In addition to the description of the method, we will give a few examples of applications of the technique. Well-ordered arrays of suspended silicon nanowires down to 6.5 nm linewidths have been fabricated and are to be studied as field effect transistors (FETs) or biosensors, for instance. EUV achromatic Talbot lithography (ATL), another interference scheme that utilizes a single grating, was shown to yield well-defined nanoparticles over large-areas with high uniformity presenting great opportunities in the field of nanocatalysis. EUV-IL is in addition, playing a key role in the future introduction of EUV lithography into high volume manufacturing (HVM) of semiconductor devices for the 7 and 5 nm logic node (16 nm and 13 nm HP, respectively) and beyond while the availability of commercial EUV-tools is still very much limited for research.

A study of the mechanical vibrations of a table-top extreme ultraviolet interference nanolithography tool.

PubMed

Prezioso, S; De Marco, P; Zuppella, P; Santucci, S; Ottaviano, L

2010-04-01

A prototype low cost table-top extreme ultraviolet (EUV) laser source (1.5 ns pulse duration, lambda=46.9 nm) was successfully employed as a laboratory scale interference nanolithography (INL) tool. Interference patterns were obtained with a simple Lloyd's mirror setup. Periodic structures on Polymethylmethacrylate/Si substrates were produced on large areas (8 mm(2)) with resolutions from 400 to 22.5 nm half pitch (the smallest resolution achieved so far with table-top EUV laser sources). The mechanical vibrations affecting both the laser source and Lloyd's setup were studied to determine if and how they affect the lateral resolution of the lithographic system. The vibration dynamics was described by a statistical model based on the assumption that the instantaneous position of the vibrating mechanical parts follows a normal distribution. An algorithm was developed to simulate the process of sample irradiation under different vibrations. The comparison between simulations and experiments allowed to estimate the characteristic amplitude of vibrations that was deduced to be lower than 50 nm. The same algorithm was used to reproduce the expected pattern profiles in the lambda/4 half pitch physical resolution limit. In that limit, a nonzero pattern modulation amplitude was obtained from the simulations, comparable to the peak-to-valley height (2-3 nm) measured for the 45 nm spaced fringes, indicating that the mechanical vibrations affecting the INL tool do not represent a limit in scaling down the resolution.

Single-nm resolution approach by applying DDRP and DDRM

NASA Astrophysics Data System (ADS)

Shibayama, Wataru; Shigaki, Shuhei; Takeda, Satoshi; Nakajima, Makoto; Sakamoto, Rikimaru

2017-03-01

EUV lithography has been desired as the leading technology for 1x or single nm half-pitch patterning. However, the source power, masks and resist materials still have critical issues for mass production. Especially in resist materials, RLS trade-off has been the key issue. To overcome this issue, we are suggesting Dry Development Rinse Process (DDRP) and Materials (DDRM) as the pattern collapse mitigation approach. This DDRM can perform not only as pattern collapse free materials for fine pitch, but also as the etching hard mask against bottom layer (spin on carbon : SOC). In this paper, we especially propose new approaches to achieve high resolution around hp1X nm L/S and single nm line patterning. Especially, semi iso 8nm line was successfully achieved with good LWR (2.5nm) and around 3 times aspect ratio. This single nm patterning technique also helped to enhance sensitivity about 33%. On the other hand, pillar patterning thorough CH pattern by applying DDRP also showed high resolution below 20nm pillar CD with good LCDU and high sensitivity. This new DDRP technology can be the promising approach not only for hp1Xnm level patterning but also single nm patterning in N7/N5 and beyond.

Sensitivity enhancement of chemically amplified resists and performance study using extreme ultraviolet interference lithography

NASA Astrophysics Data System (ADS)

Buitrago, Elizabeth; Nagahara, Seiji; Yildirim, Oktay; Nakagawa, Hisashi; Tagawa, Seiichi; Meeuwissen, Marieke; Nagai, Tomoki; Naruoka, Takehiko; Verspaget, Coen; Hoefnagels, Rik; Rispens, Gijsbert; Shiraishi, Gosuke; Terashita, Yuichi; Minekawa, Yukie; Yoshihara, Kosuke; Oshima, Akihiro; Vockenhuber, Michaela; Ekinci, Yasin

2016-07-01

Extreme ultraviolet lithography (EUVL, λ=13.5 nm) is the most promising candidate to manufacture electronic devices for future technology nodes in the semiconductor industry. Nonetheless, EUVL still faces many technological challenges as it moves toward high-volume manufacturing (HVM). A key bottleneck from the tool design and performance point of view has been the development of an efficient, high-power EUV light source for high throughput production. Consequently, there has been extensive research on different methodologies to enhance EUV resist sensitivity. Resist performance is measured in terms of its ultimate printing resolution, line width roughness (LWR), sensitivity [S or best energy (BE)], and exposure latitude (EL). However, there are well-known fundamental trade-off relationships (line width roughness, resolution and sensitivity trade-off) among these parameters for chemically amplified resists (CARs). We present early proof-of-principle results for a multiexposure lithography process that has the potential for high sensitivity enhancement without compromising other important performance characteristics by the use of a "Photosensitized Chemically Amplified Resist™" (PSCAR™). With this method, we seek to increase the sensitivity by combining a first EUV pattern exposure with a second UV-flood exposure (λ=365 nm) and the use of a PSCAR. In addition, we have evaluated over 50 different state-of-the-art EUV CARs. Among these, we have identified several promising candidates that simultaneously meet sensitivity, LWR, and EL high-performance requirements with the aim of resolving line space (L/S) features for the 7- and 5-nm logic node [16- and 13-nm half-pitch (HP), respectively] for HVM. Several CARs were additionally found to be well resolved down to 12- and 11-nm HP with minimal pattern collapse and bridging, a remarkable feat for CARs. Finally, the performance of two negative tone state-of-the-art alternative resist platforms previously investigated was compared to the CAR performance at and below 16-nm HP resolution, demonstrating the need for alternative resist solutions at 13-nm resolution and below. EUV interference lithography (IL) has provided and continues to provide a simple yet powerful platform for academic and industrial research, enabling the characterization and development of resist materials before commercial EUV exposure tools become available. Our experiments have been performed at the EUV-IL set-up in the Swiss Light Source (SLS) synchrotron facility located at the Paul Scherrer Institute (PSI).

A novel approach of ensuring layout regularity correct by construction in advanced technologies

NASA Astrophysics Data System (ADS)

Ahmed, Shafquat Jahan; Vaderiya, Yagnesh; Gupta, Radhika; Parthasarathy, Chittoor; Marin, Jean-Claude; Robert, Frederic

2017-03-01

In advanced technology nodes, layout regularity has become a mandatory prerequisite to create robust designs less sensitive to variations in manufacturing process in order to improve yield and minimizing electrical variability. In this paper we describe a method for designing regular full custom layouts based on design and process co-optimization. The method includes various design rule checks that can be used on-the-fly during leaf-cell layout development. We extract a Layout Regularity Index (LRI) from the layouts based on the jogs, alignments and pitches used in the design for any given metal layer. Regularity Index of a layout is the direct indicator of manufacturing yield and is used to compare the relative health of different layout blocks in terms of process friendliness. The method has been deployed for 28nm and 40nm technology nodes for Memory IP and is being extended to other IPs (IO, standard-cell). We have quantified the gain of layout regularity with the deployed method on printability and electrical characteristics by process-variation (PV) band simulation analysis and have achieved up-to 5nm reduction in PV band.

In-die mask registration measurement on 28nm-node and beyond

NASA Astrophysics Data System (ADS)

Chen, Shen Hung; Cheng, Yung Feng; Chen, Ming Jui

2013-09-01

As semiconductor go to smaller node, the critical dimension (CD) of process become more and more small. For lithography, RET (Resolution Enhancement Technology) applications can be used for wafer printing of smaller CD/pitch on 28nm node and beyond. SMO (Source Mask Optimization), DPT (Double Patterning Technology) and SADP (Self-Align Double Patterning) can provide lower k1 value for lithography. In another way, image placement error and overlay control also become more and more important for smaller chip size (advanced node). Mask registration (image placement error) and mask overlay are important factors to affect wafer overlay control/performance especially for DPT or SADP. In traditional method, the designed registration marks (cross type, square type) with larger CD were put into scribe-line of mask frame for registration and overlay measurement. However, these patterns are far way from real patterns. It does not show the registration of real pattern directly and is not a convincing method. In this study, the in-die (in-chip) registration measurement is introduced. We extract the dummy patterns that are close to main pattern from post-OPC (Optical Proximity Correction) gds by our desired rule and choose the patterns that distribute over whole mask uniformly. The convergence test shows 100 points measurement has a reliable result.

Jet and flash imprint defectivity: assessment and reduction for semiconductor applications

NASA Astrophysics Data System (ADS)

Malloy, Matt; Litt, Lloyd C.; Johnson, Steve; Resnick, Douglas J.; Lovell, David

2011-04-01

Defectivity has been historically identified as a leading technical roadblock to the implementation of nanoimprint lithography for semiconductor high volume manufacturing. The lack of confidence in nanoimprint's ability to meet defect requirements originates in part from the industry's past experiences with 1X lithography and the shortage in end-user generated defect data. SEMATECH has therefore initiated a defect assessment aimed at addressing these concerns. The goal is to determine whether nanoimprint, specifically Jet and Flash Imprint Lithography from Molecular Imprints, is capable of meeting semiconductor industry defect requirements. At this time, several cycles of learning have been completed in SEMATECH's defect assessment, with promising results. J-FIL process random defectivity of < 0.1 def/cm2 has been demonstrated using a 120nm half-pitch template, providing proof of concept that a low defect nanoimprint process is possible. Template defectivity has also improved significantly as shown by a pre-production grade template at 80nm pitch. Cycles of learning continue on feature sizes down to 22nm.

Alternating phase-shift mask and binary mask for 45-nm node and beyond: the impact on the mask error control

NASA Astrophysics Data System (ADS)

Kojima, Yosuke; Shirasaki, Masanori; Chiba, Kazuaki; Tanaka, Tsuyoshi; Inazuki, Yukio; Yoshikawa, Hiroki; Okazaki, Satoshi; Iwase, Kazuya; Ishikawa, Kiichi; Ozawa, Ken

2007-05-01

For 45 nm node and beyond, the alternating phase-shift mask (alt. PSM), one of the most expected resolution enhancement technologies (RET) because of its high image contrast and small mask error enhancement factor (MEEF), and the binary mask (BIM) attract attention. Reducing CD and registration errors and defect are their critical issues. As the solution, the new blank for alt. PSM and BIM is developed. The top film of new blank is thin Cr, and the antireflection film and shielding film composed of MoSi are deposited under the Cr film. The mask CD performance is evaluated for through pitch, CD linearity, CD uniformity, global loading, resolution and pattern fidelity, and the blank performance is evaluated for optical density, reflectivity, sheet resistance, flatness and defect level. It is found that the performance of new blank is equal to or better than that of conventional blank in all items. The mask CD performance shows significant improvement. The lithography performance of new blank is confirmed by wafer printing and AIMS measurement. The full dry type alt. PSM has been used as test plate, and the test results show that new blank can almost meet the specifications of pi-0 CD difference, CD uniformity and process margin for 45 nm node. Additionally, the new blank shows the better pattern fidelity than that of conventional blank on wafer. AIMS results are almost same as wafer results except for the narrowest pattern. Considering the result above, this new blank can reduce the mask error factors of alt. PSM and BIM for 45 nm node and beyond.

Simulation study of reticle enhancement technology applications for 157-nm lithography

NASA Astrophysics Data System (ADS)

Schurz, Dan L.; Flack, Warren W.; Karklin, Linard

2002-03-01

The acceleration of the International Technology Roadmap for Semiconductors (ITRS) is placing significant pressure on the industry's infrastructure, particularly the lithography equipment. As recently as 1997, there was no optical solution offered past the 130 nm design node. The current roadmap has the 65 nm node (reduced from 70 nm) pulled in one year to 2007. Both 248 nm and 193 nm wavelength lithography tools will be pushed to their practical resolution limits in the near term. Very high numerical aperture (NA) 193 nm exposure tools in conjunction with resolution enhancement techniques (RET) will postpone the requirement for 157 nm lithography in manufacturing. However, ICs produced at 70 nm design rules with manufacturable k 1 values will require that 157 nm wavelength lithography tools incorporate the same RETs utilized in 248nm, and 193 nm tools. These enhancements will include Alternating Phase Shifting Masks (AltPSM) and Optical Proximity Correction (OPC) on F 2 doped quartz reticle substrates. This study investigates simulation results when AltPSM is applied to sub-100 nm test patterns in 157 nm lithography in order to maintain Critical Dimension (CD) control for both nested and isolated geometries. Aerial image simulations are performed for a range of numerical apertures, chrome regulators, gate pitches and gate widths. The relative performance for phase shifted versus binary structures is also compared. Results are demonstrated in terms of aerial image contrast and process window changes. The results clearly show that a combination of high NA and RET is necessary to achieve usable process windows for 70 nm line/space structures. In addition, it is important to consider two-dimensional proximity effects for sub-100 nm gate structures.

A random approach of test macro generation for early detection of hotspots

NASA Astrophysics Data System (ADS)

Lee, Jong-hyun; Kim, Chin; Kang, Minsoo; Hwang, Sungwook; Yang, Jae-seok; Harb, Mohammed; Al-Imam, Mohamed; Madkour, Kareem; ElManhawy, Wael; Kwan, Joe

2016-03-01

Multiple-Patterning Technology (MPT) is still the preferred choice over EUV for the advanced technology nodes, starting the 20nm node. Down the way to 7nm and 5nm nodes, Self-Aligned Multiple Patterning (SAMP) appears to be one of the effective multiple patterning techniques in terms of achieving small pitch of printed lines on wafer, yet its yield is in question. Predicting and enhancing the yield in the early stages of technology development are some of the main objectives for creating test macros on test masks. While conventional yield ramp techniques for a new technology node have relied on using designs from previous technology nodes as a starting point to identify patterns for Design of Experiment (DoE) creation, these techniques are challenging to apply in the case of introducing an MPT technique like SAMP that did not exist in previous nodes. This paper presents a new strategy for generating test structures based on random placement of unit patterns that can construct more meaningful bigger patterns. Specifications governing the relationships between those unit patterns can be adjusted to generate layout clips that look like realistic SAMP designs. A via chain can be constructed to connect the random DoE of SAMP structures through a routing layer to external pads for electrical measurement. These clips are decomposed according to the decomposition rules of the technology into the appropriate mandrel and cut masks. The decomposed clips can be tested through simulations, or electrically on silicon to discover hotspots. The hotspots can be used in optimizing the fabrication process and models to fix them. They can also be used as learning patterns for DFM deck development. By expanding the size of the randomly generated test structures, more hotspots can be detected. This should provide a faster way to enhance the yield of a new technology node.

Research on high-efficiency polishing technology of photomask substrate

NASA Astrophysics Data System (ADS)

Zhao, Shijie; Xie, Ruiqing; Zhou, Lian; Liao, Defeng; Chen, Xianhua; Wang, Jian

2018-03-01

A method of photomask substrate fabrication is demonstrated ,that the surface figure and roughness of fused silica will converge to target precision rapidly with the full aperture polishing. Surface figure of optical flats in full aperture polishing processes is primarily dependent on the surface profile of polishing pad, therefor, a improved function of polishing mechanism was put forward based on two axis lapping machine and technology experience, and the pad testing based on displacement sensor and the active conditioning method of the pad is applied in this research. Moreover , the clamping deformation of the thin glass is solved by the new pitch dispensing method. The experimental results show that the surface figure of the 152mm×152mm×6.35mm optical glass is 0.25λ(λ=633nm) and the roughness is 0.32nm ,which has meet the requirements of mask substrate for 90 45nm nodes.

Sensitivity enhancement of the high-resolution xMT multi-trigger resist for EUV lithography

NASA Astrophysics Data System (ADS)

Popescu, Carmen; Frommhold, Andreas; McClelland, Alexandra; Roth, John; Ekinci, Yasin; Robinson, Alex P. G.

2017-03-01

Irresistible Materials is developing a new molecular resist system that demonstrates high-resolution capability based on the multi-trigger concept. A series of studies such as resist purification, developer choice,and enhanced resist crosslinking were conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 2.7 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to pattern 14 nm hp features with dose of 14 mJ/cm2 with an LWR of 4.9 nm. We have also begun to investigate the addition of high-Z additives to EUV photoresist as a means to increase sensitivity and modify secondary electron blur.

Lithographic qualification of high-transmission mask blank for 10nm node and beyond

NASA Astrophysics Data System (ADS)

Xu, Yongan; Faure, Tom; Viswanathan, Ramya; Lobb, Granger; Wistrom, Richard; Burns, Sean; Hu, Lin; Graur, Ioana; Bleiman, Ben; Fischer, Dan; Mignot, Yann; Sakamoto, Yoshifumi; Toda, Yusuke; Bolton, John; Bailey, Todd; Felix, Nelson; Arnold, John; Colburn, Matthew

2016-04-01

In this paper, we discuss the lithographic qualification of high transmission (High T) mask for Via and contact hole applications in 10nm node and beyond. First, the simulated MEEF and depth of focus (DoF) data are compared between the 6% and High T attnPSM masks with the transmission of High T mask blank varying from 12% to 20%. The 12% High T blank shows significantly better MEEF and larger DoF than those of 6% attnPSM mask blank, which are consistent with our wafer data. However, the simulations show no obvious advantage in MEEF and DoF when the blank transmittance is larger than 12%. From our wafer data, it has been seen that the common process window from High T mask is 40nm bigger than that from the 6% attnPSM mask. In the elongated bar structure with smaller aspect ratio, 1.26, the 12% High T mask shows significantly less develop CD pull back in the major direction. Compared to the High T mask, the optimized new illumination condition for 6% attnPSM shows limited improvement in MEEF and the DoF through pitch. In addition, by using the High T mask blank, we have also investigated the SRAF printing, side lobe printing and the resist profile through cross sections, and no patterning risk has been found for manufacturing. As part of this work new 12% High T mask blank materials and processes were developed, and a brief overview of key mask technology development results have been shared. Overall, it is concluded that the High T mask, 12% transmission, provides the most robust and extendable lithographic solution for 10nm node and beyond.

Multi-trigger resist patterning with ASML NXE3300 EUV scanner

NASA Astrophysics Data System (ADS)

Vesters, Yannick; McClelland, Alexandra; De Simone, Danilo; Popescu, Carmen; Dawson, Guy; Roth, John; Theis, Wolfgang; Vandenberghe, Geert; Robinson, Alex P. G.

2018-03-01

Irresistible Materials (IM) is developing novel resist systems based on the multi-trigger concept, which incorporates a dose dependent quenching-like behaviour. The Multi Trigger Resist (MTR) is a negative tone crosslinking resist that does not need a post exposure bake (PEB), and during the past years, has been mainly tested using interference lithography at PSI. In this study, we present the results that have been obtained using MTR resists, performing EUV exposures on ASML NXE3300B EUV scanner at IMEC. We present the lithography performance of the MTR1 resist series in two formulations - a high-speed baseline, and a formulation designed to enhance the multi-trigger behaviour. Additionally, we present results for the MTR2 resist series, which has been designed for lower line edge roughness. The high-speed baseline resist (MTR1), showed 18 nm resolution at 20mJ/cm2. The MTR2 resist shows 16nm half pitch lines patterned with a dose of 38mJ/cm2, giving a LER of 3.7 nm. Performance across multiple process conditions are discussed. We performed etch rate measurement and the multi-trigger resist showed etch resistance equivalent or better than standard chemically amplified resist. This could compensate for the lower film thickness required to avoid pattern collapse at pitch 32nm.

Subwavelength resolution Fourier ptychography with hemispherical digital condensers

NASA Astrophysics Data System (ADS)

Pan, An; Zhang, Yan; Li, Maosen; Zhou, Meiling; Lei, Ming; Yao, Baoli

2018-02-01

Fourier ptychography (FP) is a promising computational imaging technique that overcomes the physical space-bandwidth product (SBP) limit of a conventional microscope by applying angular diversity illuminations. However, to date, the effective imaging numerical aperture (NA) achievable with a commercial LED board is still limited to the range of 0.3-0.7 with a 4×/0.1NA objective due to the constraint of planar geometry with weak illumination brightness and attenuated signal-to-noise ratio (SNR). Thus the highest achievable half-pitch resolution is usually constrained between 500-1000 nm, which cannot fulfill some needs of high-resolution biomedical imaging applications. Although it is possible to improve the resolution by using a higher magnification objective with larger NA instead of enlarging the illumination NA, the SBP is suppressed to some extent, making the FP technique less appealing, since the reduction of field-of-view (FOV) is much larger than the improvement of resolution in this FP platform. Herein, in this paper, we initially present a subwavelength resolution Fourier ptychography (SRFP) platform with a hemispherical digital condenser to provide high-angle programmable plane-wave illuminations of 0.95NA, attaining a 4×/0.1NA objective with the final effective imaging performance of 1.05NA at a half-pitch resolution of 244 nm with a wavelength of 465 nm across a wide FOV of 14.60 mm2 , corresponding to an SBP of 245 megapixels. Our work provides an essential step of FP towards high-NA imaging applications without scarfing the FOV, making it more practical and appealing.

Application of CPL with Interference Mapping Lithography to generate random contact reticle designs for the 65-nm node

NASA Astrophysics Data System (ADS)

Van Den Broeke, Douglas J.; Laidig, Thomas L.; Chen, J. Fung; Wampler, Kurt E.; Hsu, Stephen D.; Shi, Xuelong; Socha, Robert J.; Dusa, Mircea V.; Corcoran, Noel P.

2004-08-01

Imaging contact and via layers continues to be one of the major challenges to be overcome for 65nm node lithography. Initial results of using ASML MaskTools' CPL Technology to print contact arrays through pitch have demonstrated the potential to further extend contact imaging to a k1 near 0.30. While there are advantages and disadvantages for any potential RET, the benefits of not having to solve the phase assignment problem (which can lead to unresolvable phase conflicts), of it being a single reticle - single exposure technique, and its application to multiple layers within a device (clear field and dark field) make CPL an attractive, cost effective solution to low k1 imaging. However, real semiconductor circuit designs consist of much more than regular arrays of contact holes and a method to define the CPL reticle design for a full chip circuit pattern is required in order for this technique to be feasible in volume manufacturing. Interference Mapping Lithography (IML) is a novel approach for defining optimum reticle patterns based on the imaging conditions that will be used when the wafer is exposed. Figure 1 shows an interference map for an isolated contact simulated using ASML /1150 settings of 0.75NA and 0.92/0.72/30deg Quasar illumination. This technique provides a model-based approach for placing all types features (scattering bars, anti-scattering bars, non-printing assist features, phase shifted and non-phase shifted) for the purpose of enhancing the resolution of the target pattern and it can be applied to any reticle type including binary (COG), attenuated phase shifting mask (attPSM), alternating aperture phase shifting mask (altPSM), and CPL. In this work, we investigate the application of IML to generate CPL reticle designs for random contact patterns that are typical for 65nm node logic devices. We examine the critical issues related to using CPL with Interference Mapping Lithography including controlling side lobe printing, contact patterns with odd symmetry, forbidden pitch regions, and reticle manufacturing constraints. Multiple methods for deriving the interference map used to define reticle patterns for various RET's will be discussed. CPL reticle designs that were created from implementing automated algorithms for contact pattern decomposition using MaskWeaver will also be presented.

Process variation challenges and resolution in the negative-tone develop double patterning for 20nm and below technology node

NASA Astrophysics Data System (ADS)

Mehta, Sohan S.; Ganta, Lakshmi K.; Chauhan, Vikrant; Wu, Yixu; Singh, Sunil; Ann, Chia; Subramany, Lokesh; Higgins, Craig; Erenturk, Burcin; Srivastava, Ravi; Singh, Paramjit; Koh, Hui Peng; Cho, David

2015-03-01

Immersion based 20nm technology node and below becoming very challenging to chip designers, process and integration due to multiple patterning to integrate one design layer . Negative tone development (NTD) processes have been well accepted by industry experts for enabling technologies 20 nm and below. 193i double patterning is the technology solution for pitch down to 80 nm. This imposes tight control in critical dimension(CD) variation in double patterning where design patterns are decomposed in two different masks such as in litho-etch-litho etch (LELE). CD bimodality has been widely studied in LELE double patterning. A portion of CD tolerance budget is significantly consumed by variations in CD in double patterning. The objective of this work is to study the process variation challenges and resolution in the Negative Tone Develop Process for 20 nm and Below Technology Node. This paper describes the effect of dose slope on CD variation in negative tone develop LELE process. This effect becomes even more challenging with standalone NTD developer process due to q-time driven CD variation. We studied impact of different stacks with combination of binary and attenuated phase shift mask and estimated dose slope contribution individually from stack and mask type. Mask 3D simulation was carried out to understand theoretical aspect. In order to meet the minimum insulator requirement for the worst case on wafer the overlay and critical dimension uniformity (CDU) budget margins have slimmed. Besides the litho process and tool control using enhanced metrology feedback, the variation control has other dependencies too. Color balancing between the two masks in LELE is helpful in countering effects such as iso-dense bias, and pattern shifting. Dummy insertion and the improved decomposition techniques [2] using multiple lower priority constraints can help to a great extent. Innovative color aware routing techniques [3] can also help with achieving more uniform density and color balanced layouts.

The challenges of transitioning from linear to high-order overlay control in advanced lithography

NASA Astrophysics Data System (ADS)

Adel, M.; Izikson, P.; Tien, D.; Huang, C. K.; Robinson, J. C.; Eichelberger, B.

2008-03-01

In the lithography section of the ITRS 2006 update, at the top of the list of difficult challenges appears the text "overlay of multiple exposures including mask image placement". This is a reflection of the fact that today overlay is becoming a major yield risk factor in semiconductor manufacturing. Historically, lithographers have achieved sufficient alignment accuracy and hence layer to layer overlay control by relying on models which define overlay as a linear function of the field and wafer coordinates. These linear terms were easily translated to correctibles in the available exposure tool degrees of freedom on the wafer and reticle stages. However, as the 45 nm half pitch node reaches production, exposure tool vendors have begun to make available, and lithographers have begun to utilize so called high order wafer and field control, in which either look up table or high order polynomial models are modified on a product by product basis. In this paper, the major challenges of this transition will be described. It will include characterization of the sources of variation which need to be controlled by these new models and the overlay and alignment sampling optimization problem which needs to be addressed, while maintaining the ever tightening demands on productivity and cost of ownership.

ILT optimization of EUV masks for sub-7nm lithography

NASA Astrophysics Data System (ADS)

Hooker, Kevin; Kuechler, Bernd; Kazarian, Aram; Xiao, Guangming; Lucas, Kevin

2017-06-01

The 5nm and 7nm technology nodes will continue recent scaling trends and will deliver significantly smaller minimum features, standard cell areas and SRAM cell areas vs. the 10nm node. There are tremendous economic pressures to shrink each subsequent technology, though in a cost-effective and performance enhancing manner. IC manufacturers are eagerly awaiting EUV so that they can more aggressively shrink their technology than they could by using complicated MPT. The current 0.33NA EUV tools and processes also have their patterning limitations. EUV scanner lenses, scanner sources, masks and resists are all relatively immature compared to the current lithography manufacturing baseline of 193i. For example, lens aberrations are currently several times larger (as a function of wavelength) in EUV scanners than for 193i scanners. Robustly patterning 16nm L/S fully random logic metal patterns and 40nm pitch random logic rectangular contacts with 0.33NA EUV are tough challenges that will benefit from advanced OPC/RET. For example, if an IC manufacturer can push single exposure device layer resolution 10% tighter using improved ILT to avoid using DPT, there will be a significant cost and process complexity benefit to doing so. ILT is well known to have considerable benefits in finding flexible 193i mask pattern solutions to improve process window, improve 2D CD control, improve resolution in low K1 lithography regime and help to delay the introduction of DPT. However, ILT has not previously been applied to EUV lithography. In this paper, we report on new developments which extend ILT method to EUV lithography and we characterize the benefits seen vs. traditional EUV OPC/RET methods.

The PixFEL project: Progress towards a fine pitch X-ray imaging camera for next generation FEL facilities

NASA Astrophysics Data System (ADS)

Rizzo, G.; Batignani, G.; Benkechkache, M. A.; Bettarini, S.; Casarosa, G.; Comotti, D.; Dalla Betta, G.-F.; Fabris, L.; Forti, F.; Grassi, M.; Lodola, L.; Malcovati, P.; Manghisoni, M.; Mendicino, R.; Morsani, F.; Paladino, A.; Pancheri, L.; Paoloni, E.; Ratti, L.; Re, V.; Traversi, G.; Vacchi, C.; Verzellesi, G.; Xu, H.

2016-07-01

The INFN PixFEL project is developing the fundamental building blocks for a large area X-ray imaging camera to be deployed at next generation free electron laser (FEL) facilities with unprecedented intensity. Improvement in performance beyond the state of art in imaging instrumentation will be explored adopting advanced technologies like active edge sensors, a 65 nm node CMOS process and vertical integration. These are the key ingredients of the PixFEL project to realize a seamless large area focal plane instrument composed by a matrix of multilayer four-side buttable tiles. In order to minimize the dead area and reduce ambiguities in image reconstruction, a fine pitch active edge thick sensor is being optimized to cope with very high intensity photon flux, up to 104 photons per pixel, in the range from 1 to 10 keV. A low noise analog front-end channel with this wide dynamic range and a novel dynamic compression feature, together with a low power 10 bit analog to digital conversion up to 5 MHz, has been realized in a 110 μm pitch with a 65 nm CMOS process. Vertical interconnection of two CMOS tiers will be also explored in the future to build a four-side buttable readout chip with high density memories. In the long run the objective of the PixFEL project is to build a flexible X-ray imaging camera for operation both in burst mode, like at the European X-FEL, or in continuous mode with the high frame rates anticipated for future FEL facilities.

Green binary and phase shifting mask

NASA Astrophysics Data System (ADS)

Shy, S. L.; Hong, Chao-Sin; Wu, Cheng-San; Chen, S. J.; Wu, Hung-Yu; Ting, Yung-Chiang

2009-12-01

SixNy/Ni thin film green mask blanks were developed , and are now going to be used to replace general chromium film used for binary mask as well as to replace molydium silicide embedded material for AttPSM for I-line (365 nm), KrF (248 nm), ArF (193 nm) and Contact/Proximity lithography. A bilayer structure of a 1 nm thick opaque, conductive nickel layer and a SixNy layer is proposed for binary and phase-shifting mask. With the good controlling of plasma CVD of SixNy under silane (50 sccm), ammonia (5 sccm) and nitrogen (100 sccm), the pressure is 250 mTorr. and RF frequency 13.56 MHz and power 50 W. SixNy has enough deposition latitude to meet the requirements as an embedded layer for required phase shift 180 degree, and the T% in 193, 248 and 365 nm can be adjusted between 2% to 20% for binary and phase shifting mask usage. Ni can be deposited by E-gun, its sheet resistance Rs is less than 1.435 kΩ/square. Jeol e-beam system and I-line stepper are used to evaluate these thin film green mask blanks, feature size less than 200 nm half pitch pattern and 0.558 μm pitch contact hole can be printed. Transmission spectrums of various thickness of SixNy film are inspected by using UV spectrometer and FTIR. Optical constants of the SixNy film are measured by n & k meter and surface roughness is inspected by using Atomic Force Microscope (AFM).

Nanosilicon dot arrays with a bit pitch and a track pitch of 25 nm formed by electron-beam drawing and reactive ion etching for 1 Tbit/in.{sup 2} storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hosaka, Sumio; Sano, Hirotaka; Shirai, Masumi

2006-11-27

The formation of very fine Si dots with a bit pitch and a track pitch of less than 25 nm using electron-beam (EB) lithography on ZEP520 and calixarene EB resists and CF{sub 4} reactive ion etching has been demonstrated. The experimental results indicate that the calixarene resist is very suitable for forming an ultrahigh-packed bit array pattern of Si dots. This result promises to open the way toward 1 Tbit/in.{sup 2} storage using patterned media with a dot size of <15 nm.

MAPPER: high-throughput maskless lithography

NASA Astrophysics Data System (ADS)

Wieland, M. J.; de Boer, G.; ten Berge, G. F.; Jager, R.; van de Peut, T.; Peijster, J. J. M.; Slot, E.; Steenbrink, S. W. H. K.; Teepen, T. F.; van Veen, A. H. V.; Kampherbeek, B. J.

2009-03-01

Maskless electron beam lithography, or electron beam direct write, has been around for a long time in the semiconductor industry and was pioneered from the mid-1960s onwards. This technique has been used for mask writing applications as well as device engineering and in some cases chip manufacturing. However because of its relatively low throughput compared to optical lithography, electron beam lithography has never been the mainstream lithography technology. To extend optical lithography double patterning, as a bridging technology, and EUV lithography are currently explored. Irrespective of the technical viability of both approaches, one thing seems clear. They will be expensive [1]. MAPPER Lithography is developing a maskless lithography technology based on massively-parallel electron-beam writing with high speed optical data transport for switching the electron beams. In this way optical columns can be made with a throughput of 10-20 wafers per hour. By clustering several of these columns together high throughputs can be realized in a small footprint. This enables a highly cost-competitive alternative to double patterning and EUV alternatives. In 2007 MAPPER obtained its Proof of Lithography milestone by exposing in its Demonstrator 45 nm half pitch structures with 110 electron beams in parallel, where all the beams where individually switched on and off [2]. In 2008 MAPPER has taken a next step in its development by building several tools. The objective of building these tools is to involve semiconductor companies to be able to verify tool performance in their own environment. To enable this, the tools will have a 300 mm wafer stage in addition to a 110-beam optics column. First exposures at 45 nm half pitch resolution have been performed and analyzed. On the same wafer it is observed that all beams print and based on analysis of 11 beams the CD for the different patterns is within 2.2 nm from target and the CD uniformity for the different patterns is better than 2.8 nm.

Left-hemisphere activation is associated with enhanced vocal pitch error detection in musicians with absolute pitch

PubMed Central

Behroozmand, Roozbeh; Ibrahim, Nadine; Korzyukov, Oleg; Robin, Donald A.; Larson, Charles R.

2014-01-01

The ability to process auditory feedback for vocal pitch control is crucial during speaking and singing. Previous studies have suggested that musicians with absolute pitch (AP) develop specialized left-hemisphere mechanisms for pitch processing. The present study adopted an auditory feedback pitch perturbation paradigm combined with ERP recordings to test the hypothesis whether the neural mechanisms of the left-hemisphere enhance vocal pitch error detection and control in AP musicians compared with relative pitch (RP) musicians and non-musicians (NM). Results showed a stronger N1 response to pitch-shifted voice feedback in the right-hemisphere for both AP and RP musicians compared with the NM group. However, the left-hemisphere P2 component activation was greater in AP and RP musicians compared with NMs and also for the AP compared with RP musicians. The NM group was slower in generating compensatory vocal reactions to feedback pitch perturbation compared with musicians, and they failed to re-adjust their vocal pitch after the feedback perturbation was removed. These findings suggest that in the earlier stages of cortical neural processing, the right hemisphere is more active in musicians for detecting pitch changes in voice feedback. In the later stages, the left-hemisphere is more active during the processing of auditory feedback for vocal motor control and seems to involve specialized mechanisms that facilitate pitch processing in the AP compared with RP musicians. These findings indicate that the left hemisphere mechanisms of AP ability are associated with improved auditory feedback pitch processing during vocal pitch control in tasks such as speaking or singing. PMID:24355545

Nano-imaging enabled via self-assembly

PubMed Central

McLeod, Euan; Ozcan, Aydogan

2014-01-01

SUMMARY Imaging object details with length scales below approximately 200 nm has been historically difficult for conventional microscope objective lenses because of their inability to resolve features smaller than one-half the optical wavelength. Here we review some of the recent approaches to surpass this limit by harnessing self-assembly as a fabrication mechanism. Self-assembly can be used to form individual nano- and micro-lenses, as well as to form extended arrays of such lenses. These lenses have been shown to enable imaging with resolutions as small as 50 nm half-pitch using visible light, which is well below the Abbe diffraction limit. Furthermore, self-assembled nano-lenses can be used to boost contrast and signal levels from small nano-particles, enabling them to be detected relative to background noise. Finally, alternative nano-imaging applications of self-assembly are discussed, including three-dimensional imaging, enhanced coupling from light-emitting diodes, and the fabrication of contrast agents such as quantum dots and nanoparticles. PMID:25506387

Coded aperture detector: an image sensor with sub 20-nm pixel resolution.

PubMed

Miyakawa, Ryan; Mayer, Rafael; Wojdyla, Antoine; Vannier, Nicolas; Lesser, Ian; Aron-Dine, Shifrah; Naulleau, Patrick

2014-08-11

We describe the coded aperture detector, a novel image sensor based on uniformly redundant arrays (URAs) with customizable pixel size, resolution, and operating photon energy regime. In this sensor, a coded aperture is scanned laterally at the image plane of an optical system, and the transmitted intensity is measured by a photodiode. The image intensity is then digitally reconstructed using a simple convolution. We present results from a proof-of-principle optical prototype, demonstrating high-fidelity image sensing comparable to a CCD. A 20-nm half-pitch URA fabricated by the Center for X-ray Optics (CXRO) nano-fabrication laboratory is presented that is suitable for high-resolution image sensing at EUV and soft X-ray wavelengths.

Left-hemisphere activation is associated with enhanced vocal pitch error detection in musicians with absolute pitch.

PubMed

Behroozmand, Roozbeh; Ibrahim, Nadine; Korzyukov, Oleg; Robin, Donald A; Larson, Charles R

2014-02-01

The ability to process auditory feedback for vocal pitch control is crucial during speaking and singing. Previous studies have suggested that musicians with absolute pitch (AP) develop specialized left-hemisphere mechanisms for pitch processing. The present study adopted an auditory feedback pitch perturbation paradigm combined with ERP recordings to test the hypothesis whether the neural mechanisms of the left-hemisphere enhance vocal pitch error detection and control in AP musicians compared with relative pitch (RP) musicians and non-musicians (NM). Results showed a stronger N1 response to pitch-shifted voice feedback in the right-hemisphere for both AP and RP musicians compared with the NM group. However, the left-hemisphere P2 component activation was greater in AP and RP musicians compared with NMs and also for the AP compared with RP musicians. The NM group was slower in generating compensatory vocal reactions to feedback pitch perturbation compared with musicians, and they failed to re-adjust their vocal pitch after the feedback perturbation was removed. These findings suggest that in the earlier stages of cortical neural processing, the right hemisphere is more active in musicians for detecting pitch changes in voice feedback. In the later stages, the left-hemisphere is more active during the processing of auditory feedback for vocal motor control and seems to involve specialized mechanisms that facilitate pitch processing in the AP compared with RP musicians. These findings indicate that the left hemisphere mechanisms of AP ability are associated with improved auditory feedback pitch processing during vocal pitch control in tasks such as speaking or singing. Copyright © 2013 Elsevier Inc. All rights reserved.

An In situ Analysis of the Dissolution Characteristics of Half Pitch Line and Space Extreme Ultraviolet Lithography Resist Patterns

NASA Astrophysics Data System (ADS)

Santillan, Julius Joseph; Itani, Toshiro

2013-06-01

The characterization of the resist dissolution is one fundamental area of research that has been continuously investigated. This paper focuses on the preliminary work on the application the high speed atomic force microscope (HS-AFM) for the in situ dissolution analysis half-pitch (hp) lines and spaces (L/S) at standard developer concentration. In earlier works, this has been difficult but through extensive optimization and the use of carbon nano fiber-tipped cantilevers, the dissolution characterization of a 32 nm hp L/S pattern at 0.26 N aqueous tetramethylammonium hydroxide developer (standard developer concentration) was successfully achieved. Based on the results obtained using the EIDEC standard resist (ESR1) it was found that regardless of analysis condition such as resist pattern configuration (isolated or L/S pattern) and developer concentration (diluted or standard), similar dissolution characteristics in the form of resist swelling of exposed areas was observed. Moreover, further investigations using other types of model resist polymer platforms such as poly(hydroxystyrene) (PHS)-based and hybrid (PHS-methacryl)-based model resists have confirmed that dissolution behavior is not affected by the analysis conditions applied.

Theoretical study on sensitivity enhancement in energy-deficit region of chemically amplified resists used for extreme ultraviolet lithography

NASA Astrophysics Data System (ADS)

Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

2017-10-01

The role of photons in lithography is to transfer the energy and information required for resist pattern formation. In the information-deficit region, a trade-off relationship is observed between line edge roughness (LER) and sensitivity. However, the sensitivity can be increased without increasing LER in the energy-deficit region. In this study, the sensitivity enhancement limit was investigated, assuming line-and-space patterns with a half-pitch of 11 nm. LER was calculated by a Monte Carlo method. It was unrealistic to increase the sensitivity twofold while keeping the line width roughness (LWR) within 10% critical dimension (CD), whereas the twofold sensitivity enhancement with 20% CD LWR was feasible. The requirements are roughly that the sensitization distance should be less than 2 nm and that the total sensitizer concentration should be higher than 0.3 nm-3.

Challenges of image placement and overlay at the 90-nm and 65-nm nodes

NASA Astrophysics Data System (ADS)

Trybula, Walter J.

2003-05-01

The technology acceleration of the ITRS Roadmap has many implications on both the semiconductor supplier community and the manufacturers. INTERNATIONAL SE-MATECH has been leading and supporting efforts to investigate the impact of the tech-nology introduction. This paper examines the issue of manufacturing tolerances available for image placement on adjacent critical levels (overlay) at the 90nm and 65nm technol-ogy nodes. The allowable values from the 2001 release of the ITRS Roadmap are 32nm for the 90nm node, and 23nm for the 65nm node. Even the 130nm node has overlay requirements of only 46nm. Employing tolerances that can be predicted, the impact of existing production/processing tolerance accumulation can provide an indication of the challenges facing the manufacturer in the production of 90nm and 65nm Node devices.

Sentinel lymph node detection in gynecologic malignancies by a handheld fluorescence camera

NASA Astrophysics Data System (ADS)

Hirsch, Ole; Szyc, Lukasz; Muallem, Mustafa Zelal; Ignat, Iulia; Chekerov, Radoslav; Macdonald, Rainer; Sehouli, Jalid; Braicu, Ioana; Grosenick, Dirk

2017-02-01

Near-infrared fluorescence imaging using indocyanine green (ICG) as a tracer is a promising technique for mapping the lymphatic system and for detecting sentinel lymph nodes (SLN) during cancer surgery. In our feasibility study we have investigated the application of a custom-made handheld fluorescence camera system for the detection of lymph nodes in gynecological malignancies. It comprises a low cost CCD camera with enhanced NIR sensitivity and two groups of LEDs emitting at wavelengths of 735 nm and 830 nm for interlaced recording of fluorescence and reflectance images of the tissue, respectively. With the help of our system, surgeons can observe fluorescent tissue structures overlaid onto the anatomical image on a monitor in real-time. We applied the camera system for intraoperative lymphatic mapping in 5 patients with vulvar cancer, 5 patients with ovarian cancer, 3 patients with cervical cancer, and 3 patients with endometrial cancer. ICG was injected at four loci around the primary malignant tumor during surgery. After a residence time of typically 15 min fluorescence images were taken in order to visualize the lymph nodes closest to the carcinomas. In cases with vulvar cancer about half of the lymph nodes detected by routinely performed radioactive SLN mapping have shown fluorescence in vivo as well. In the other types of carcinomas several lymph nodes could be detected by fluorescence during laparotomy. We conclude that our low cost camera system has sufficient sensitivity for lymphatic mapping during surgery.

Dual-Color Fluorescence Imaging of EpCAM and EGFR in Breast Cancer Cells with a Bull's Eye-Type Plasmonic Chip.

PubMed

Izumi, Shota; Yamamura, Shohei; Hayashi, Naoko; Toma, Mana; Tawa, Keiko

2017-12-19

Surface plasmon field-enhanced fluorescence microscopic observation of a live breast cancer cell was performed with a plasmonic chip. Two cell lines, MDA-MB-231 and Michigan Cancer Foundation-7 (MCF-7), were selected as breast cancer cells, with two kinds of membrane protein, epithelial cell adhesion molecule (EpCAM) and epidermal growth factor receptor (EGFR), observed in both cells. The membrane proteins are surface markers used to differentiate and classify breast cancer cells. EGFR and EpCAM were detected with Alexa Fluor ® 488-labeled anti-EGFR antibody (488-EGFR) and allophycocyanin (APC)-labeled anti-EpCAM antibody (APC-EpCAM), respectively. In MDA-MB231 cells, three-fold plus or minus one and seven-fold plus or minus two brighter fluorescence of 488-EGFR were observed on the 480-nm pitch and the 400-nm pitch compared with that on a glass slide. Results show the 400-nm pitch is useful. Dual-color fluorescence of 488-EGFR and APC-EpCAM in MDA-MB231 was clearly observed with seven-fold plus or minus two and nine-fold plus or minus three, respectively, on the 400-nm pitch pattern of a plasmonic chip. Therefore, the 400-nm pitch contributed to the dual-color fluorescence enhancement for these wavelengths. An optimal grating pitch of a plasmonic chip improved a fluorescence image of membrane proteins with the help of the surface plasmon-enhanced field.

A methodology for double patterning compliant split and design

NASA Astrophysics Data System (ADS)

Wiaux, Vincent; Verhaegen, Staf; Iwamoto, Fumio; Maenhoudt, Mireille; Matsuda, Takashi; Postnikov, Sergei; Vandenberghe, Geert

2008-11-01

Double Patterning allows to further extend the use of water immersion lithography at its maximum numerical aperture NA=1.35. Splitting of design layers to recombine through Double Patterning (DP) enables an effective resolution enhancement. Single polygons may need to be split up (cut) depending on the pattern density and its 2D content. The split polygons recombine at the so-called 'stitching points'. These stitching points may affect the yield due to the sensitivity to process variations. We describe a methodology to ensure a robust double patterning by identifying proper split- and design- guidelines. Using simulations and experimental data, we discuss in particular metal1 first interconnect layers of random LOGIC and DRAM applications at 45nm half-pitch (hp) and 32nm hp where DP may become the only timely patterning solution.

A stand-alone compact EUV microscope based on gas-puff target source.

PubMed

Torrisi, Alfio; Wachulak, Przemyslaw; Węgrzyński, Łukasz; Fok, Tomasz; Bartnik, Andrzej; Parkman, Tomáš; Vondrová, Šárka; Turňová, Jana; Jankiewicz, Bartłomiej J; Bartosewicz, Bartosz; Fiedorowicz, Henryk

2017-02-01

We report on a very compact desk-top transmission extreme ultraviolet (EUV) microscope based on a laser-plasma source with a double stream gas-puff target, capable of acquiring magnified images of objects with a spatial (half-pitch) resolution of sub-50 nm. A multilayer ellipsoidal condenser is used to focus and spectrally narrow the radiation from the plasma, producing a quasi-monochromatic EUV radiation (λ = 13.8 nm) illuminating the object, whereas a Fresnel zone plate objective forms the image. Design details, development, characterization and optimization of the EUV source and the microscope are described and discussed. Test object and other samples were imaged to demonstrate superior resolution compared to visible light microscopy. © 2016 The Authors Journal of Microscopy © 2016 Royal Microscopical Society.

Directed self-assembly of poly(styrene)-block-poly(acrylic acid) copolymers for sub-20nm pitch patterning

NASA Astrophysics Data System (ADS)

Cheng, Jing; Lawson, Richard A.; Yeh, Wei-Ming; Jarnagin, Nathan D.; Peters, Andrew; Tolbert, Laren M.; Henderson, Clifford L.

2012-03-01

Directed self-assembly (DSA) of block copolymers is a promising technology for extending the patterning capability of current lithographic exposure tools. For example, production of sub-40 nm pitch features using 193nm exposure technologies is conceivably possible using DSA methods without relying on time consuming, challenging, and expensive multiple patterning schemes. Significant recent work has focused on demonstration of the ability to produce large areas of regular grating structures with low numbers of defects using self-assembly of poly(styrene)-b-poly(methyl methacrylate) copolymers (PS-b-PMMA). While these recent results are promising and have shown the ability to print pitches approaching 20 nm using DSA, the ability to advance to even smaller pitches will be dependent upon the ability to develop new block copolymers with higher χ values and the associated alignment and block removal processes required to achieve successful DSA with these new materials. This paper reports on work focused on identifying higher χ block copolymers and their associated DSA processes for sub-20 nm pitch patterning. In this work, DSA using polystyrene-b-polyacid materials has been explored. Specifically, it is shown that poly(styrene)-b-poly(acrylic acid) copolymers (PS-b-PAA) is one promising material for achieving substantially smaller pitch patterns than those possible with PS-b-PMMA while still utilizing simple hydrocarbon polymers. In fact, it is anticipated that much of the learning that has been done with the PS-b-PMMA system, such as development of highly selective plasma etch block removal procedures, can be directly leveraged or transferred to the PS-b-PAA system. Acetone vapor annealing of PS-b-PAA (Mw=16,000 g/mol with 50:50 mole ratio of PS:PAA) and its self-assembly into a lamellar morphology is demonstrated to generate a pattern pitch size (L0) of 21 nm. The χ value for PS-b-PAA was estimated from fingerprint pattern pitch data to be approximately 0.18 which is roughly 4.5 times greater than the χ for PS-b-PMMA (χPS-b-PMMA ~ 0.04).

Top-coatless 193nm positive-tone development immersion resist for logic application

NASA Astrophysics Data System (ADS)

Liu, Lian Cong; Yeh, Tsung Ju; Lin, Yeh-Sheng; Huang, Yu Chin; Kuo, Chien Wen; Huang, Wen Liang; Lin, Chia Hung; Yu, Chun Chi; Hsu, Ray; Wan, I.-Yuan; Lin, Jeff; Im, Kwang-Hwyi; Lim, Hae Jin; Jeon, Hyun K.; Suzuki, Yasuhiro; Xu, Cheng Bai

2015-03-01

In this paper, we summarize our development efforts for a top-coatless 193nm immersion positive tone development (PTD) contact hole (C/H) resist with improved litho and defect performances for logic application specifically with an advance node. The ultimate performance goal was to improve the depth of focus (DoF) margin, mask error enhancement factor (MEEF), critical dimension uniformity (CDU), contact edge roughness (CER), and defect performance. Also, the through pitch CD difference was supposed to be comparable to the previous control resist. Effects of polymer and PAG properties have been evaluated for this purpose. The material properties focused in the evaluation study were polymer activation energy (Ea), polymer solubility differentiated by polymerization process types, and diffusion length (DL) and acidity (pKa) of photoacid generator (PAG). Additionally, the impact of post exposure bake (PEB) temperature was investigated for process condition optimization. As a result of this study, a new resist formulation to satisfy all litho and defect performance was developed and production yield was further improved.

Theoretical study on effects of photodecomposable quenchers in line-and-space pattern fabrication with 7 nm quarter-pitch using chemically amplified electron beam resist process

NASA Astrophysics Data System (ADS)

Kozawa, Takahiro

2017-04-01

The line width roughness (LWR) is a significant issue in the development of chemically amplified resists. The increase in sensitizer concentration is inevitable for the suppression of LWR in the sub-10 nm fabrication. In this study, we investigated the effects of photodecomposable quenchers from the viewpoint of the excluded volume effect, assuming line-and-space patterns with 7 nm quarter-pitch (7 nm space width and 28 nm pitch). The pattern formation of chemically amplified electron beam resists with photodecomposable quenchers was calculated and compared with those with conventional quenchers. It was found that the sum of the concentrations of acid generators and quenchers (photodecomposable or conventional quenchers) can be reduced without decreasing the chemical gradient (an indicator of LWR) by using the photodecomposable quenchers. The photodecomposable quenchers are considered essential in the high-resolution fabrication.

Line edge roughness (LER) mitigation studies specific to interference-like lithography

NASA Astrophysics Data System (ADS)

Baylav, Burak; Estroff, Andrew; Xie, Peng; Smith, Bruce W.

2013-04-01

Line edge roughness (LER) is a common problem to most lithography approaches and is seen as the main resolution limiter for advanced technology nodes1. There are several contributors to LER such as chemical/optical shot noise, random nature of acid diffusion, development process, and concentration of acid generator/base quencher. Since interference-like lithography (IL) is used to define one directional gridded patterns, some LER mitigation approaches specific to IL-like imaging can be explored. Two methods investigated in this work for this goal are (i) translational image averaging along the line direction and (ii) pupil plane filtering. Experiments regarding the former were performed on both interferometric and projection lithography systems. Projection lithography experiments showed a small amount of reduction in low/mid frequency LER value for image averaged cases at pitch of 150 nm (193 nm illumination, 0.93 NA) with less change for smaller pitches. Aerial image smearing did not significantly increase LER since it was directional. Simulation showed less than 1% reduction in NILS (compared to a static, smooth mask equivalent) with ideal alignment. In addition, description of pupil plane filtering on the transfer of mask roughness is given. When astigmatism-like aberrations were introduced in the pupil, transfer of mask roughness is decreased at best focus. It is important to exclude main diffraction orders from the filtering to prevent contrast and NILS loss. These ideas can be valuable as projection lithography approaches to conditions similar to IL (e.g. strong RET methods).

The perception of complex pitch in cochlear implants: A comparison of monopolar and tripolar stimulation.

PubMed

Fielden, Claire A; Kluk, Karolina; Boyle, Patrick J; McKay, Colette M

2015-10-01

Cochlear implant listeners typically perform poorly in tasks of complex pitch perception (e.g., musical pitch and voice pitch). One explanation is that wide current spread during implant activation creates channel interactions that may interfere with perception of temporal fundamental frequency information contained in the amplitude modulations within channels. Current focusing using a tripolar mode of stimulation has been proposed as a way of reducing channel interactions, minimising spread of excitation and potentially improving place and temporal pitch cues. The present study evaluated the effect of mode in a group of cochlear implant listeners on a pitch ranking task using male and female singing voices separated by either a half or a quarter octave. Results were variable across participants, but on average, pitch ranking was at chance level when the pitches were a quarter octave apart and improved when the difference was a half octave. No advantage was observed for tripolar over monopolar mode at either pitch interval, suggesting that previously published psychophysical advantages for focused modes may not translate into improvements in complex pitch ranking. Evaluation of the spectral centroid of the stimulation pattern, plus a lack of significant difference between male and female voices, suggested that participants may have had difficulty in accessing temporal pitch cues in either mode.

Alternative method for variable aspect ratio vias using a vortex mask

NASA Astrophysics Data System (ADS)

Schepis, Anthony R.; Levinson, Zac; Burbine, Andrew; Smith, Bruce W.

2014-03-01

Historically IC (integrated circuit) device scaling has bridged the gap between technology nodes. Device size reduction is enabled by increased pattern density, enhancing functionality and effectively reducing cost per chip. Exemplifying this trend are aggressive reductions in memory cell sizes that have resulted in systems with diminishing area between bit/word lines. This affords an even greater challenge in the patterning of contact level features that are inherently difficult to resolve because of their relatively small area and complex aerial image. To accommodate these trends, semiconductor device design has shifted toward the implementation of elliptical contact features. This empowers designers to maximize the use of free device space, preserving contact area and effectively reducing the via dimension just along a single axis. It is therefore critical to provide methods that enhance the resolving capacity of varying aspect ratio vias for implementation in electronic design systems. Vortex masks, characterized by their helically induced propagation of light and consequent dark core, afford great potential for the patterning of such features when coupled with a high resolution negative tone resist system. This study investigates the integration of a vortex mask in a 193nm immersion (193i) lithography system and qualifies its ability to augment aspect ratio through feature density using aerial image vector simulation. It was found that vortex fabricated vias provide a distinct resolution advantage over traditionally patterned contact features employing a 6% attenuated phase shift mask (APM). 1:1 features were resolvable at 110nm pitch with a 38nm critical dimension (CD) and 110nm depth of focus (DOF) at 10% exposure latitude (EL). Furthermore, iterative source-mask optimization was executed as means to augment aspect ratio. By employing mask asymmetries and directionally biased sources aspect ratios ranging between 1:1 and 2:1 were achievable, however, this range is ultimately dictated by pitch employed.

Manufacturability improvements in EUV resist processing toward NXE:3300 processing

NASA Astrophysics Data System (ADS)

Kuwahara, Yuhei; Matsunaga, Koichi; Shimoaoki, Takeshi; Kawakami, Shinichiro; Nafus, Kathleen; Foubert, Philippe; Goethals, Anne-Marie; Shimura, Satoru

2014-03-01

As the design rule of semiconductor process gets finer, extreme ultraviolet lithography (EUVL) technology is aggressively studied as a process for 22nm half pitch and beyond. At present, the studies for EUV focus on manufacturability. It requires fine resolution, uniform, smooth patterns and low defectivity, not only after lithography but also after the etch process. In the first half of 2013, a CLEAN TRACKTM LITHIUS ProTMZ-EUV was installed at imec for POR development in preparation of the ASML NXE:3300. This next generation coating/developing system is equipped with state of the art defect reduction technology. This tool with advanced functions can achieve low defect levels. This paper reports on the progress towards manufacturing defectivity levels and latest optimizations towards the NXE:3300 POR for both lines/spaces and contact holes at imec.

Alternative stitching method for massively parallel e-beam lithography

NASA Astrophysics Data System (ADS)

Brandt, Pieter; Tranquillin, Céline; Wieland, Marco; Bayle, Sébastien; Milléquant, Matthieu; Renault, Guillaume

2015-03-01

In this study a novel stitching method other than Soft Edge (SE) and Smart Boundary (SB) is introduced and benchmarked against SE. The method is based on locally enhanced Exposure Latitude without cost of throughput, making use of the fact that the two beams that pass through the stitching region can deposit up to 2x the nominal dose. The method requires a complex Proximity Effect Correction that takes a preset stitching dose profile into account. On a Metal clip at minimum half-pitch of 32 nm for MAPPER FLX 1200 tool specifications, the novel stitching method effectively mitigates Beam to Beam (B2B) position errors such that they do not induce increase in CD Uniformity (CDU). In other words, the same CDU can be realized inside the stitching region as outside the stitching region. For the SE method, the CDU inside is 0.3 nm higher than outside the stitching region. 5 nm direct overlay impact from B2B position errors cannot be reduced by a stitching strategy.

Application of cyclic fluorocarbon/argon discharges to device patterning

DOE Office of Scientific and Technical Information (OSTI.GOV)

Metzler, Dominik, E-mail: dmetzler@umd.edu; Uppireddi, Kishore; Bruce, Robert L.

2016-01-15

With increasing demands on device patterning to achieve smaller critical dimensions and pitches for the 5 nm node and beyond, the need for atomic layer etching (ALE) is steadily increasing. In this work, a cyclic fluorocarbon/Ar plasma is successfully used for ALE patterning in a manufacturing scale reactor. Self-limited etching of silicon oxide is observed. The impact of various process parameters on the etch performance is established. The substrate temperature has been shown to play an especially significant role, with lower temperatures leading to higher selectivity and lower etch rates, but worse pattern fidelity. The cyclic ALE approach established with thismore » work is shown to have great potential for small scale device patterning, showing self-limited etching, improved uniformity and resist mask performance.« less

Application of cyclic fluorocarbon/argon discharges to device patterning

DOE PAGES

Metzler, Dominik; Uppiredi, Kishore; Bruce, Robert L.; ...

2015-11-13

With increasing demands on device patterning to achieve smaller critical dimensions and pitches for the 5nm node and beyond, the need for atomic layer etching (ALE) is steadily increasing. In this study, a cyclic fluorocarbon/Ar plasma is successfully used for ALE patterning in a manufacturing scale reactor. Self-limited etching of silicon oxide is observed. The impact of various process parameters on the etch performance is established. The substrate temperature has been shown to play an especially significant role, with lower temperatures leading to higher selectivity and lower etch rates, but worse pattern fidelity. The cyclic ALE approach established with thismore » work is shown to have great potential for small scale device patterning, showing self-limited etching, improved uniformity and resist mask performance.« less

Edge placement error control and Mask3D effects in High-NA anamorphic EUV lithography

NASA Astrophysics Data System (ADS)

van Setten, Eelco; Bottiglieri, Gerardo; de Winter, Laurens; McNamara, John; Rusu, Paul; Lubkoll, Jan; Rispens, Gijsbert; van Schoot, Jan; Neumann, Jens Timo; Roesch, Matthias; Kneer, Bernhard

2017-10-01

To enable cost-effective shrink at the 3nm node and beyond, and to extend Moore's law into the next decade, ASML is developing a new high-NA EUV platform. The high-NA system is targeted to feature a numerical aperture (NA) of 0.55 to extend the single exposure resolution limit to 8nm half pitch. The system is being designed to achieve an on-product-overlay (OPO) performance well below 2nm, a high image contrast to drive down local CD errors and to obtain global CDU at sub-1nm level to be able to meet customer edge placement error (EPE) requirements for the devices of the future. EUV scanners employ reflective Bragg multi-layer mirrors in the mask and in the Projection Optics Box (POB) that is used to project the mask pattern into the photoresist on the silicon wafer. These MoSi multi-layer mirrors are tuned for maximum reflectivity, and thus productivity, at 13.5nm wavelength. The angular range of incident light for which a high reflectivity at the reticle can be obtained is limited to +/- 11o, exceeding the maximum angle occurring in current 0.33NA scanners at 4x demagnification. At 0.55NA the maximum angle at reticle level would extend up to 17o in the critical (scanning) direction and compromise the imaging performance of horizontal features severely. To circumvent this issue a novel anamorphic optics design has been introduced, which has a 4x demagnification in the X- (slit) direction and 8x demagnification in the Y- (scanning) direction as well as a central obscuration in the exit pupil. In this work we will show that the EUV high-NA anamorphic concept can successfully solve the angular reflectivity issues and provide good imaging performance in both directions. Several unique imaging challenges in comparison to the 0.33NA isomorphic baseline are being studied, such as the impact of the central obscuration in the POB and Mask-3D effects at increased NA that seem most pronounced for vertical features. These include M3D induced contrast loss and non-telecentricity. We will explore the solutions needed to mitigate these effects and to offer high quality imaging to be able to meet the required EPE performance in both orientations.

Vortex via process: analysis and mask fabrication for contact CDs <80 nm

NASA Astrophysics Data System (ADS)

Levenson, Marc D.; Tan, Sze M.; Dai, Grace; Morikawa, Yasutaka; Hayashi, Naoya; Ebihara, Takeaki

2003-06-01

In an optical vortex, the wavefront spirals like a corkscrew, rather than forming planes or spheres. Since any nonzero optical amplitude must have a well-defined phase, the axis of a vortex is always dark. Printed in negative resist at 248nm and NA=0.63, 250nm pitch vortex arrays would produce contact holes with 80nm0.6 can be patterned using a chromeless phase-edge mask composed of rectangles with nominal phases of 0°, 90°, 180° and 270°. Analytic and numerical calculations have been performed to characterize the aerial images projected from such vortex masks using the Kirchhoff-approximation and rigorous EMF methods. Combined with resist simulations, these analyses predict process windows with ~10%Elat and >200nm DOF for 80nm CDs on pitches greater than or equal to 250nm at σ greater than or equal to 0.15. Smaller CDs and pitches are possible with shorter wavelength and larger NA while larger pitches give rise to larger CDs. At pitch >0.8μm, the vortices begin to print independently for σ greater than or equal to 0.3. Such "independent" vortices have a quasi-isofocal dose that gives rise to 100nm contacts with Elat>9% and DOF>500nm at σ=0.3. The extra darkness of the nominal 270° phase step can be accommodated by fine-tuning the etch depth. A reticle fabrication process that achieves the required alignment and vertical wall profiles has been exercised and test masks analyzed. In an actual chip design, unwanted vortices and phase step images would be erased from the resist pattern by exposing the wafer with a second, more conventional trim mask. Vortex via placement is consistent with the coarse-gridded grating design paradigms which would - if widely exercised - lower the cost of the required reticles. Compared to other ways of producing deep sub-wavelength contacts, the vortex via process requires fewer masks and reduces the overlay and process control challenges. A high resolution negative-working resist process is essential, however.

Functional role of delta and theta band oscillations for auditory feedback processing during vocal pitch motor control

PubMed Central

Behroozmand, Roozbeh; Ibrahim, Nadine; Korzyukov, Oleg; Robin, Donald A.; Larson, Charles R.

2015-01-01

The answer to the question of how the brain incorporates sensory feedback and links it with motor function to achieve goal-directed movement during vocalization remains unclear. We investigated the mechanisms of voice pitch motor control by examining the spectro-temporal dynamics of EEG signals when non-musicians (NM), relative pitch (RP), and absolute pitch (AP) musicians maintained vocalizations of a vowel sound and received randomized ± 100 cents pitch-shift stimuli in their auditory feedback. We identified a phase-synchronized (evoked) fronto-central activation within the theta band (5–8 Hz) that temporally overlapped with compensatory vocal responses to pitch-shifted auditory feedback and was significantly stronger in RP and AP musicians compared with non-musicians. A second component involved a non-phase-synchronized (induced) frontal activation within the delta band (1–4 Hz) that emerged at approximately 1 s after the stimulus onset. The delta activation was significantly stronger in the NM compared with RP and AP groups and correlated with the pitch rebound error (PRE), indicating the degree to which subjects failed to re-adjust their voice pitch to baseline after the stimulus offset. We propose that the evoked theta is a neurophysiological marker of enhanced pitch processing in musicians and reflects mechanisms by which humans incorporate auditory feedback to control their voice pitch. We also suggest that the delta activation reflects adaptive neural processes by which vocal production errors are monitored and used to update the state of sensory-motor networks for driving subsequent vocal behaviors. This notion is corroborated by our findings showing that larger PREs were associated with greater delta band activity in the NM compared with RP and AP groups. These findings provide new insights into the neural mechanisms of auditory feedback processing for vocal pitch motor control. PMID:25873858

Evaluating diffraction-based overlay

NASA Astrophysics Data System (ADS)

Li, Jie; Tan, Asher; Jung, JinWoo; Goelzer, Gary; Smith, Nigel; Hu, Jiangtao; Ham, Boo-Hyun; Kwak, Min-Cheol; Kim, Cheol-Hong; Nam, Suk-Woo

2012-03-01

We evaluate diffraction-based overlay (DBO) metrology using two test wafers. The test wafers have different film stacks designed to test the quality of DBO data under a range of film conditions. We present DBO results using traditional empirical approach (eDBO). eDBO relies on linear response of the reflectance with respect to the overlay displacement within a small range. It requires specially designed targets that consist of multiple pads with programmed shifts. It offers convenience of quick recipe setup since there is no need to establish a model. We measure five DBO targets designed with different pitches and programmed shifts. The correlations of five eDBO targets and the correlation of eDBO to image-based overlay are excellent. The targets of 800nm and 600nm pitches have better dynamic precision than targets of 400nm pitch, which agrees with simulated results on signal/noise ratio. 3σ of less than 0.1nm is achieved for both wafers using the best configured targets. We further investigate the linearity assumption of eDBO algorithm. Simulation results indicate that as the pitch of DBO targets gets smaller, the nonlinearity error, i.e., the error in the overlay measurement results caused by deviation from ideal linear response, becomes bigger. We propose a nonlinearity correction (NLC) by including higher order terms in the optical response. The new algorithm with NLC improves measurement consistency for DBO targets of same pitch but different programmed shift, due to improved accuracy. The results from targets with different pitches, however, are improved marginally, indicating the presence of other error sources.

Pitching stability analysis of half-rotating wing air vehicle

NASA Astrophysics Data System (ADS)

Wang, Xiaoyi; Wu, Yang; Li, Qian; Li, Congmin; Qiu, Zhizhen

2017-06-01

Half-Rotating Wing (HRW) is a new power wing which had been developed by our work team using rotating-type flapping instead of oscillating-type flapping. Half-Rotating Wing Air Vehicle (HRWAV) is similar as Bionic Flapping Wing Air Vehicle (BFWAV). It is necessary to guarantee pitching stability of HRWAV to maintain flight stability. The working principle of HRW was firstly introduced in this paper. The rule of motion indicated that the fuselage of HRWAV without empennage would overturn forward as it generated increased pitching movement. Therefore, the empennage was added on the tail of HRWAV to balance the additional moment generated by aerodynamic force during flight. The stability analysis further shows that empennage could weaken rapidly the pitching disturbance on HRWAV and a new balance of fuselage could be achieved in a short time. Case study using numerical analysis verified correctness and validity of research results mentioned above, which could provide theoretical guidance to design and control HRWAV.

ZEP520A cold-development technique and tool for ultimate resolution to fabricate 1Xnm bit pattern EB master mold for nano-imprinting lithography for HDD/BPM development

NASA Astrophysics Data System (ADS)

Kobayashi, Hideo; Iyama, Hiromasa

2012-06-01

Poor solvent developers are effective for resolution enhancement on a polymer-type EB resist such as ZEP520A. Another way is to utilize "cold-development" technique which was accomplished by a dip-development technique usually. We then designed and successfully built a single-wafer spin-development tool for the cold-development down to -10degC in order to dissolve difficulties of the dip-development. The cold-development certainly helped improve ZEP520A resolution and hole CD size uniformity, and achieved 35nm pitch BPM patterns with the standard developer ZED-N50, but not 25nm pitch yet. By employing a poor solvent mixture of iso-Propyl Alcohol (IPA) and Fluoro-Carbon (FC), 25nm pitch BPM patterns were accomplished. However, the cold-development showed almost no improvement on the IPA/FC mixture developer solvent. This paper describes cold-development technique and a tool, as well as its results, for ZEP520A resolution enhancement to fabricate 1Xnm bits (holes) for EB master-mold for Nano-Imprinting Lithography for 1Tbit/inch2 and 25nm pitch Bit Patterned Media development.

Overlay performance assessment of MAPPER's FLX-1200 (Conference Presentation)

NASA Astrophysics Data System (ADS)

Lattard, Ludovic; Servin, Isabelle; Pradelles, Jonathan; Blancquaert, Yoann; Rademaker, Guido; Pain, Laurent; de Boer, Guido; Brandt, Pieter; Dansberg, Michel; Jager, Remco J. A.; Peijster, Jerry J. M.; Slot, Erwin; Steenbrink, Stijn W. H. K.; Vergeer, Niels; Wieland, Marco

2017-04-01

Mapper Lithography has introduced its first product, the FLX-1200, which is installed at CEA-Leti in Grenoble (France). This is a mask less lithography system, based on massively parallel electron-beam writing with high-speed optical data transport for switching the electron beams. This FLX platform is initially targeted for 1 wph performance for 28 nm technology nodes, but can also be used for less demanding imaging. The electron source currently integrated is capable of scaling to 10 wph at the same resolution performance, which will be implemented by gradually upgrading the illumination optics. The system has an optical alignment system enabling mix-and-match with optical 193 nm immersion systems using standard NVSM marks. The tool at CEA-Leti is in-line with a Sokudo Duo clean track. Mapper Lithography and CEA-Leti are working in collaboration to develop turnkey solution for specific applications. At previous conferences we have presented imaging results including 28nm node resolution, cross wafer CDu of 2.5nm 3 and a throughput of half a wafer per hour, overhead times included. At this conference we will present results regarding the overlay performance of the FLX-1200. In figure 2 an initial result towards measuring the overlay performance of the FLX-1200 is shown. We have exposed a wafer twice without unloading the wafer in between exposures. In the first exposure half of a dense dot array is exposed. In the second exposure the remainder of the dense dot array is exposed. After development the wafer has been inspected using a CD-SEM at 480 locations distributed over an area of 100mm x 100mm. For each SEM image the shift of the pattern written in the first exposure relative to the pattern written in the second exposure is measured. Cross wafer this shift is 7 nm u+3s in X and 5 nm u+3s in Y. The next step is to evaluate the impact of unloading and loading of the wafer in between exposures. At the conference the latest results will be presented.

Protection efficiency of a standard compliant EUV reticle handling solution

NASA Astrophysics Data System (ADS)

He, Long; Lystad, John; Wurm, Stefan; Orvek, Kevin; Sohn, Jaewoong; Ma, Andy; Kearney, Patrick; Kolbow, Steve; Halbmaier, David

2009-03-01

For successful implementation of extreme ultraviolet lithography (EUVL) technology for late cycle insertion at 32 nm half-pitch (hp) and full introduction for 22 nm hp high volume production, the mask development infrastructure must be in place by 2010. The central element of the mask infrastructure is contamination-free reticle handling and protection. Today, the industry has already developed and balloted an EUV pod standard for shipping, transporting, transferring, and storing EUV masks. We have previously demonstrated that the EUV pod reticle handling method represents the best approach in meeting EUVL high volume production requirements, based on then state-of-the-art inspection capability at ~53nm polystyrene latex (PSL) equivalent sensitivity. In this paper, we will present our latest data to show defect-free reticle handling is achievable down to 40 nm particle sizes, using the same EUV pod carriers as in the previous study and the recently established world's most advanced defect inspection capability of ~40 nm SiO2 equivalent sensitivity. The EUV pod is a worthy solution to meet EUVL pilot line and pre-production exposure tool development requirements. We will also discuss the technical challenges facing the industry in refining the EUV pod solution to meet 22 nm hp EUVL production requirements and beyond.

A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity

PubMed Central

Zhang, Fan; Niu, Hanben

2016-01-01

In this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process. The implementation consisted of a continuous contact ring around each p+/n-well photodiode in the pixel array in order to apply sufficient light shielding. The parasitic light sensitivity of the in-pixel storage node was measured to be 1/8.5 × 107 when illuminated by a 405-nm diode laser and 1/1.4 × 104 when illuminated by a 650-nm diode laser. The pixel pitch was 24 μm, the size of the square p+/n-well photodiode in each pixel was 7 μm per side, the measured random readout noise was 217 e− rms, and the measured dynamic range of the pixel of the designed chip was 5500:1. The type of gated CMOS image sensor (CIS) that is proposed here can be used in ultra-fast framing cameras to observe non-repeatable fast-evolving phenomena. PMID:27367699

A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity.

PubMed

Zhang, Fan; Niu, Hanben

2016-06-29

In this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process. The implementation consisted of a continuous contact ring around each p+/n-well photodiode in the pixel array in order to apply sufficient light shielding. The parasitic light sensitivity of the in-pixel storage node was measured to be 1/8.5 × 10⁷ when illuminated by a 405-nm diode laser and 1/1.4 × 10⁴ when illuminated by a 650-nm diode laser. The pixel pitch was 24 μm, the size of the square p+/n-well photodiode in each pixel was 7 μm per side, the measured random readout noise was 217 e(-) rms, and the measured dynamic range of the pixel of the designed chip was 5500:1. The type of gated CMOS image sensor (CIS) that is proposed here can be used in ultra-fast framing cameras to observe non-repeatable fast-evolving phenomena.

Reticle decision center: a novel applications platform for enhancing reticle yield and productivity at 10nm technology and beyond

NASA Astrophysics Data System (ADS)

Hwa, George; Bugata, Raj; Chiang, Kaiming; Lakkapragada, Suresh; Tolani, Vikram; Gopalakrishnan, Sandhya; Chen, Chun-Jen; Yang, Chin-Ting; Hsu, Sheng-Chang; Tuo, Laurent

2016-10-01

In the semiconductor IC manufacturing industry, challenges associated with producing defect-free photomasks have been dramatically increasing. At the 10nm technology node, since the 193nm immersion scanner numerical aperture has remained the same 1.35 as in previous nodes, more multi-patterning and aggressive SMO illumination sources are being used to effectively print smaller feature CDs and pitches. To accommodate such specialized sources, more model-based mask OPC and ILT have been used making mask designs very complicated. This in turn makes mask manufacturing very challenging especially for the defect inspection, repair, and metrology processes that need to guarantee defect-free masks. Over the past few years, considerable innovation have been made in the areas of defect inspection and disposition that has ensured continued predictability of mask quality to wafer and final chip yields. The accurate disposition of each mask defect before and after repair has been facilitated by a suite of automated applications such as ADC, LPR, RPG, AIA, etc. that work together with the inspection, repair, and metrology tools and effectively also provide the best possible utilization of the tool capability, capacity and operator resources. In this paper we introduce a new consolidated applications platform called the Reticle Decision Center (RDC) which hosts all these supporting software applications on a centralized server with direct connectivity to mask inspection, repair, metrology tools and more. The paper details how the RDC server is architected to host any application in its native operating system environment and provides for high availability with automatic failover and redundancy. The server along with its host of applications has been tightly integrated with KLA-Tencor's Teron mask inspectors. The paper concludes with showing benefits realized in mask cycle-time and yield as a result of implementing RDC into a high-volume 10nm mask-shop production line.

Investigation of phase distribution using Phame® in-die phase measurements

NASA Astrophysics Data System (ADS)

Buttgereit, Ute; Perlitz, Sascha

2009-03-01

As lithography mask processes move toward 45nm and 32nm node, mask complexity increases steadily, mask specifications tighten and process control becomes extremely important. Driven by this fact the requirements for metrology tools increase as well. Efforts in metrology have been focused on accurately measuring CD linearity and uniformity across the mask, and accurately measuring phase variation on Alternating/Attenuated PSM and transmission for Attenuated PSM. CD control on photo masks is usually done through the following processes: exposure dose/focus change, resist develop and dry etch. The key requirement is to maintain correct CD linearity and uniformity across the mask. For PSM specifically, the effect of CD uniformity for both Alternating PSM and Attenuated PSM and etch depth for Alternating PSM becomes also important. So far phase measurement has been limited to either measuring large-feature phase using interferometer-based metrology tools or measuring etch depth using AFM and converting etch depth into phase under the assumption that trench profile and optical properties of the layers remain constant. However recent investigations show that the trench profile and optical property of layers impact the phase. This effect is getting larger for smaller CD's. The currently used phase measurement methods run into limitations because they are not able to capture 3D mask effects, diffraction limitations or polarization effects. The new phase metrology system - Phame(R) developed by Carl Zeiss SMS overcomes those limitations and enables laterally resolved phase measurement in any kind of production feature on the mask. The resolution of the system goes down to 120nm half pitch at mask level. We will report on tool performance data with respect to static and dynamic phase repeatability focusing on Alternating PSM. Furthermore the phase metrology system was used to investigate mask process signatures on Alternating PSM in order to further improve the overall PSM process performance. Especially global loading effects caused by the pattern density and micro loading effects caused by the feature size itself have been evaluated using the capability of measuring phase in the small production features. The results of this study will be reported in this paper.

Biological length scale topography enhances cell-substratum adhesion of human corneal epithelial cells

PubMed Central

Karuri, Nancy W.; Liliensiek, Sara; Teixeira, Ana I.; Abrams, George; Campbell, Sean; Nealey, Paul F.; Murphy, Christopher J.

2006-01-01

Summary The basement membrane possesses a rich 3-dimensional nanoscale topography that provides a physical stimulus, which may modulate cell-substratum adhesion. We have investigated the strength of cell-substratum adhesion on nanoscale topographic features of a similar scale to that of the native basement membrane. SV40 human corneal epithelial cells were challenged by well-defined fluid shear, and cell detachment was monitored. We created silicon substrata with uniform grooves and ridges having pitch dimensions of 400-4000 nm using X-ray lithography. F-actin labeling of cells that had been incubated for 24 hours revealed that the percentage of aligned and elongated cells on the patterned surfaces was the same regardless of pitch dimension. In contrast, at the highest fluid shear, a biphasic trend in cell adhesion was observed with cells being most adherent to the smaller features. The 400 nm pitch had the highest percentage of adherent cells at the end of the adhesion assay. The effect of substratum topography was lost for the largest features evaluated, the 4000 nm pitch. Qualitative and quantitative analyses of the cells during and after flow indicated that the aligned and elongated cells on the 400 nm pitch were more tightly adhered compared to aligned cells on the larger patterns. Selected experiments with primary cultured human corneal epithelial cells produced similar results to the SV40 human corneal epithelial cells. These findings have relevance to interpretation of cell-biomaterial interactions in tissue engineering and prosthetic design. PMID:15226393

Cryogenic Etching of High Aspect Ratio 400 nm Pitch Silicon Gratings.

PubMed

Miao, Houxun; Chen, Lei; Mirzaeimoghri, Mona; Kasica, Richard; Wen, Han

2016-10-01

The cryogenic process and Bosch process are two widely used processes for reactive ion etching of high aspect ratio silicon structures. This paper focuses on the cryogenic deep etching of 400 nm pitch silicon gratings with various etching mask materials including polymer, Cr, SiO 2 and Cr-on-polymer. The undercut is found to be the key factor limiting the achievable aspect ratio for the direct hard masks of Cr and SiO 2 , while the etch selectivity responds to the limitation of the polymer mask. The Cr-on-polymer mask provides the same high selectivity as Cr and reduces the excessive undercut introduced by direct hard masks. By optimizing the etching parameters, we etched a 400 nm pitch grating to ≈ 10.6 μ m depth, corresponding to an aspect ratio of ≈ 53.

SEMATECH EUVL mask program status

NASA Astrophysics Data System (ADS)

Yun, Henry; Goodwin, Frank; Huh, Sungmin; Orvek, Kevin; Cha, Brian; Rastegar, Abbas; Kearney, Patrick

2009-04-01

As we approach the 22nm half-pitch (hp) technology node, the industry is rapidly running out of patterning options. Of the several lithography techniques highlighted in the International Technology Roadmap for Semiconductors (ITRS), the leading contender for the 22nm hp insertion is extreme ultraviolet lithography (EUVL). Despite recent advances with EUV resist and improvements in source power, achieving defect free EUV mask blank and enabling the EUV mask infrastructure still remain critical issues. To meet the desired EUV high volume manufacturing (HVM) insertion target date of 2013, these obstacles must be resolved on a timely bases. Many of the EUV mask related challenges remain in the pre-competitive stage and a collaborative industry based consortia, such as SEMATECH can play an important role to enable the EUVL landscape. SEMATECH based in Albany, NY is an international consortium representing several of the largest manufacturers in the semiconductor market. Full members include Intel, Samsung, AMD, IBM, Panasonic, HP, TI, UMC, CNSE (College of Nanoscience and Engineering), and Fuller Road Management. Within the SEMATECH lithography division a major thrust is centered on enabling the EUVL ecosystem from mask development, EUV resist development and addressing EUV manufacturability concerns. An important area of focus for the SEMATECH mask program has been the Mask Blank Development Center (MBDC). At the MBDC key issues in EUV blank development such as defect reduction and inspection capabilities are actively pursued together with research partners, key suppliers and member companies. In addition the mask program continues a successful track record of working with the mask community to manage and fund critical mask tools programs. This paper will highlight recent status of mask projects and longer term strategic direction at the MBDC. It is important that mask technology be ready to support pilot line development HVM by 2013. In several areas progress has been made but a continued collaborative effort will be needed along with timely infrastructure investments to meet these challenging goals.

Sub-10-nm patterning via directed self-assembly of block copolymer films with a vapour-phase deposited topcoat

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suh, Hyo Seon; Kim, Do Han; Moni, Priya

2017-03-27

Directed self-assembly (DSA) of the domain structure in block copolymer (BCP) thin films is a promising approach for sub-10-nm surface patterning. DSA requires the control of interfacial properties on both interfaces of a BCP film to induce the formation of domains that traverse the entire film with a perpendicular orientation. Here we show a methodology to control the interfacial properties of BCP films that uses a polymer topcoat deposited by initiated chemical vapour deposition (iCVD). The iCVD topcoat forms a crosslinked network that grafts to and immobilizes BCP chains to create an interface that is equally attractive to both blocksmore » of the underlying copolymer. The topcoat, in conjunction with a chemically patterned substrate, directs the assembly of the grating structures in BCP films with a half-pitch dimension of 9.3 nm. As the iCVD topcoat can be as thin as 7 nm, it is amenable to pattern transfer without removal. As a result, the ease of vapour-phase deposition, applicability to high-resolution BCP systems and integration with pattern-transfer schemes are attractive properties of iCVD topcoats for industrial applications.« less

Surface Modulation of Graphene Field Effect Transistors on Periodic Trench Structure.

PubMed

Jin, Jun Eon; Choi, Jun Hee; Yun, Hoyeol; Jang, Ho-Kyun; Lee, Byung Chul; Choi, Ajeong; Joo, Min-Kyu; Dettlaff-Weglikowska, Urszula; Roth, Siegmar; Lee, Sang Wook; Lee, Jae Woo; Kim, Gyu Tae

2016-07-20

In this work, graphene field effect transistors (FETs) were fabricated on a trench structure made by carbonized poly(methylmethacrylate) to modify the graphene surface. The trench-structured devices showed different characteristics depending on the channel orientation and the pitch size of the trenches as well as channel area in the FETs. Periodic corrugations and barriers of suspended graphene on the trench structure were measured by atomic force microscopy and electrostatic force microscopy. Regular barriers of 160 mV were observed for the trench structure with graphene. To confirm the transfer mechanism in the FETs depending on the channel orientation, the ratio of experimental mobility (3.6-3.74) was extracted from the current-voltage characteristics using equivalent circuit simulation. It is shown that the number of barriers increases as the pitch size decreases because the number of corrugations increases from different trench pitches. The noise for the 140 nm pitch trench is 1 order of magnitude higher than that for the 200 nm pitch trench.

The magic of 4X mask reduction

NASA Astrophysics Data System (ADS)

Lercel, Michael

2006-06-01

Although changing the mask reduction factor from 4X to a larger value offers several technical advantages, previous attempts to enact this change have not identified enough clear technical advantages to overcome the impact to productivity. Improvements in mask manufacturing, mask polarization effects, and optics cost have not been thought to be sufficient reason to accept a reduced throughput and field size. This paper summarizes the latest workshop and discussion revisiting the mask reduction factor for 32nm half-pitch lithography with hyper-numerical aperture (NA) optical or extreme ultraviolet lithography (EUVL). The workshop consensus was strongly in favor of maintaining the current magnification ratio and field size as long as mask costs can be contained.

Plasmonic Lithography Utilizing Epsilon Near Zero Hyperbolic Metamaterial.

PubMed

Chen, Xi; Zhang, Cheng; Yang, Fan; Liang, Gaofeng; Li, Qiaochu; Guo, L Jay

2017-10-24

In this work, a special hyperbolic metamaterial (HMM) metamaterial is investigated for plasmonic lithography of period reduction patterns. It is a type II HMM (ϵ ∥ < 0 and ϵ ⊥ > 0) whose tangential component of the permittivity ϵ ∥ is close to zero. Due to the high anisotropy of the type II epsilon-near-zero (ENZ) HMM, only one plasmonic mode can propagate horizontally with low loss in a waveguide system with ENZ HMM as its core. This work takes the advantage of a type II ENZ HMM composed of aluminum/aluminum oxide films and the associated unusual mode to expose a photoresist layer in a specially designed lithography system. Periodic patterns with a half pitch of 58.3 nm were achieved due to the interference of third-order diffracted light of the grating. The lines were 1/6 of the mask with a period of 700 nm and ∼1/7 of the wavelength of the incident light. Moreover, the theoretical analyses performed are widely applicable to structures made of different materials such as silver as well as systems working at deep ultraviolet wavelengths including 193, 248, and 365 nm.

Immunoreactivities of human nonmetastatic clone 23 and p53 products are disassociated and not good predictors of lymph node metastases in early-stage cervical cancer patients.

PubMed

Tee, Y T; Wang, P H; Ko, J L; Chen, G D; Chang, H; Lin, L Y

2007-01-01

To assess the relation between expressions of human nonmetastatic clone 23 (nm23-H1) and p53 in cervical cancer, their relationships with lymph node metastasis, and further to examine their predictive of lymph node metastases. nm23-H1 and p53 expression profiles were visualized by immunohistochemistry in early-stage cervical cancer specimens. Immunoreactivities of nm23-H1 and p53 were disassociated. The independent variables related with lymph node metastases were grade of cancer cell differentiation (p < 0.029) and stromal invasion (p < 0.039). Sensitivity, specificity, positive and negative predictive values, and accuracy for lymph node metastasis were calculated to be 91.7%, 13.5%, 25.6%, 83.3%, and 32.7% for nm23-H1 and 66.7%, 51.4%, 30.8%, 82.6%, and 55.1% for p53. Nm23-H1 and p53 are disassociated and not good predictors of lymph node metastases in early-stage cervical cancer patients. However, stromal invasion and cell differentiation can predict lymph node metastasis.

Statistical modeling of SRAM yield performance and circuit variability

NASA Astrophysics Data System (ADS)

Cheng, Qi; Chen, Yijian

2015-03-01

In this paper, we develop statistical models to investigate SRAM yield performance and circuit variability in the presence of self-aligned multiple patterning (SAMP) process. It is assumed that SRAM fins are fabricated by a positivetone (spacer is line) self-aligned sextuple patterning (SASP) process which accommodates two types of spacers, while gates are fabricated by a more pitch-relaxed self-aligned quadruple patterning (SAQP) process which only allows one type of spacer. A number of possible inverter and SRAM structures are identified and the related circuit multi-modality is studied using the developed failure-probability and yield models. It is shown that SRAM circuit yield is significantly impacted by the multi-modality of fins' spatial variations in a SRAM cell. The sensitivity of 6-transistor SRAM read/write failure probability to SASP process variations is calculated and the specific circuit type with the highest probability to fail in the reading/writing operation is identified. Our study suggests that the 6-transistor SRAM configuration may not be scalable to 7-nm half pitch and more robust SRAM circuit design needs to be researched.

The visible extinction peaks of Ag nanohelixes: A periodic effective dipole model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Z.-Y.; Zhao, Y.-P.

2011-02-21

Using the discrete dipole approximation method, two visible extinction peaks are found for Ag nanohelixes. Both of them redshift periodically in an approximate half pitch with the helix height and redshift linearly with the helix diameter and pitch height. At the two absorbance peaks, an integer number of E-field maxima occur along the helix. These field maxima could be treated as results of collective electron oscillations by periodic effective dipoles within a half pitch along the helix. The wavelengths of the absorbance peaks are found to scale with the effective dipole length, which is consistent with the periodic structure ofmore » the helix.« less

Results from a new die-to-database reticle inspection platform

NASA Astrophysics Data System (ADS)

Broadbent, William; Xiong, Yalin; Giusti, Michael; Walsh, Robert; Dayal, Aditya

2007-03-01

A new die-to-database high-resolution reticle defect inspection system has been developed for the 45nm logic node and extendable to the 32nm node (also the comparable memory nodes). These nodes will use predominantly 193nm immersion lithography although EUV may also be used. According to recent surveys, the predominant reticle types for the 45nm node are 6% simple tri-tone and COG. Other advanced reticle types may also be used for these nodes including: dark field alternating, Mask Enhancer, complex tri-tone, high transmission, CPL, EUV, etc. Finally, aggressive model based OPC will typically be used which will include many small structures such as jogs, serifs, and SRAF (sub-resolution assist features) with accompanying very small gaps between adjacent structures. The current generation of inspection systems is inadequate to meet these requirements. The architecture and performance of a new die-to-database inspection system is described. This new system is designed to inspect the aforementioned reticle types in die-to-database and die-to-die modes. Recent results from internal testing of the prototype systems are shown. The results include standard programmed defect test reticles and advanced 45nm and 32nm node reticles from industry sources. The results show high sensitivity and low false detections being achieved.

IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels.

PubMed

Yokogawa, Sozo; Oshiyama, Itaru; Ikeda, Harumi; Ebiko, Yoshiki; Hirano, Tomoyuki; Saito, Suguru; Oinoue, Takashi; Hagimoto, Yoshiya; Iwamoto, Hayato

2017-06-19

We report on the IR sensitivity enhancement of back-illuminated CMOS Image Sensor (BI-CIS) with 2-dimensional diffractive inverted pyramid array structure (IPA) on crystalline silicon (c-Si) and deep trench isolation (DTI). FDTD simulations of semi-infinite thick c-Si having 2D IPAs on its surface whose pitches over 400 nm shows more than 30% improvement of light absorption at λ = 850 nm and the maximum enhancement of 43% with the 540 nm pitch at the wavelength is confirmed. A prototype BI-CIS sample with pixel size of 1.2 μm square containing 400 nm pitch IPAs shows 80% sensitivity enhancement at λ = 850 nm compared to the reference sample with flat surface. This is due to diffraction with the IPA and total reflection at the pixel boundary. The NIR images taken by the demo camera equip with a C-mount lens show 75% sensitivity enhancement in the λ = 700-1200 nm wavelength range with negligible spatial resolution degradation. Light trapping CIS pixel technology promises to improve NIR sensitivity and appears to be applicable to many different image sensor applications including security camera, personal authentication, and range finding Time-of-Flight camera with IR illuminations.

In-plane pitch control of cholesteric liquid crystals by formation of artificial domains via patterned photopolymerization.

PubMed

Yoshida, Hiroyuki; Miura, Yusuke; Tokuoka, Kazuki; Suzuki, Satoshi; Fujii, Akihiko; Ozaki, Masanori

2008-11-10

A controlled helix pitch modulation in the in-plane direction of a planarly aligned cholesteric liquid crystal cell is demonstrated by using photopolymerizable cholesteric liquid crystals. By fabricating artificial domains with a closed volume via two-photon excitation laser-lithography, the degree of pitch modulation could be controlled by adjusting the surface area to volume ratio of the domain. A pitch modulation of over 60 nm was realized by designing the shape of the artificial domain.

Rationale of lymph node dissection for breast cancer--from the viewpoint of analysis of axillary lymphatic flow using activated carbon particle CH40.

PubMed

Sawai, K; Hagiwara, A; Shimotsuma, M; Sakakibara, T; Imanishi, T; Takemoto, Y; Takahashi, T

1996-03-01

In order to rationalize lymph node dissection for breast cancer, we reviewed regional lymphatic flow from the mesial and outer half of the breast using intra-tumoral injection of activated carbon particles (CH40). Seventy patients with breast cancer were included in this study. Cancers were located in the mesial half of the breast in 25 cases and in its outer half in 41 cases. Since regional lymph nodes were blackened by CH40, lymph node dissection was performed easily and small lymph nodes could be readily examined. The average number of resected nodes in each case was 29.4. When CH40 was injected into the mesial half of the breast, the rates of blackened nodes (number of macroscopically blackened lymph nodes/number of total removed lymph nodes) in the stations were 46.6% (No. 1a), 41.4% (No. 1b), 62.1% (No. 1c), 61.8% (No. 2), 69.2.% (No. 2h), and 65.6% (No. 3). When CH40 was injected into outer half of the breast, those were 62.0% (No. 1a), 64.3% (No. 1b), 68.7% (No. 1c), 75.3% (No. 2), and 67.8% (No. 2h). Regardless of tumor location, the rates of blackened nodes were high in each station. In conclusion, regardless of tumor location it is impossible to determine the level of axillary dissection for breast cancer. It should be all or nothing.

Extended self-ordering regime in hard anodization and its application to make asymmetric AAO membranes for large pitch-distance nanostructures.

PubMed

Kim, Minwoo; Ha, Yoon-Cheol; Nguyen, Truong Nhat; Choi, Hae Young; Kim, Doohun

2013-12-20

We report here a fast and reliable hard anodization process to make asymmetric anodic aluminum oxide (AAO) membranes which can serve as a template for large pitch-distance nanostructures. In order to make larger pitch distances possible, the common burning failure associated with the high current density during the conventional constant voltage hard anodization, especially at a voltage higher than a known limit, i.e., 155 V for oxalic acid, was effectively suppressed by using a burning-protective agent. A new self-ordering regime beyond the voltage limit was observed with a different voltage-interpore distance relationship of 2.2 nm V(-1) compared to the reported 2.0 nm V(-1) for hard anodization. Combining a sulfuric acid mild anodization with this new regime of hard anodization, we further demonstrate a scalable process to make an asymmetric membrane with size up to ~47 mm in diameter and ~60 μm in thickness. This free-standing membrane can be used as a template for novel nanopatterned structures such as arrays of quantum dots, nanowires or nanotubes with diameters of a few tens of nanometers and pitch distance of over 400 nm.

Extended self-ordering regime in hard anodization and its application to make asymmetric AAO membranes for large pitch-distance nanostructures

NASA Astrophysics Data System (ADS)

Kim, Minwoo; Ha, Yoon-Cheol; Nhat Nguyen, Truong; Choi, Hae Young; Kim, Doohun

2013-12-01

We report here a fast and reliable hard anodization process to make asymmetric anodic aluminum oxide (AAO) membranes which can serve as a template for large pitch-distance nanostructures. In order to make larger pitch distances possible, the common burning failure associated with the high current density during the conventional constant voltage hard anodization, especially at a voltage higher than a known limit, i.e., 155 V for oxalic acid, was effectively suppressed by using a burning-protective agent. A new self-ordering regime beyond the voltage limit was observed with a different voltage-interpore distance relationship of 2.2 nm V-1 compared to the reported 2.0 nm V-1 for hard anodization. Combining a sulfuric acid mild anodization with this new regime of hard anodization, we further demonstrate a scalable process to make an asymmetric membrane with size up to ˜47 mm in diameter and ˜60 μm in thickness. This free-standing membrane can be used as a template for novel nanopatterned structures such as arrays of quantum dots, nanowires or nanotubes with diameters of a few tens of nanometers and pitch distance of over 400 nm.

Partial tooth gear bearings

NASA Technical Reports Server (NTRS)

Vranish, John M. (Inventor)

2010-01-01

A partial gear bearing including an upper half, comprising peak partial teeth, and a lower, or bottom, half, comprising valley partial teeth. The upper half also has an integrated roller section between each of the peak partial teeth with a radius equal to the gear pitch radius of the radially outwardly extending peak partial teeth. Conversely, the lower half has an integrated roller section between each of the valley half teeth with a radius also equal to the gear pitch radius of the peak partial teeth. The valley partial teeth extend radially inwardly from its roller section. The peak and valley partial teeth are exactly out of phase with each other, as are the roller sections of the upper and lower halves. Essentially, the end roller bearing of the typical gear bearing has been integrated into the normal gear tooth pattern.

EUV patterning improvement toward high-volume manufacturing

NASA Astrophysics Data System (ADS)

Kuwahara, Yuhei; Matsunaga, Koichi; Kawakami, Shinichiro; Nafus, Kathleen; Foubert, Philippe; Goethals, Anne-Marie

2015-03-01

Extreme ultraviolet lithography (EUVL) technology is a promising candidate for a semiconductor process for 18nm half pitch and beyond. So far, the studies of EUV for manufacturability have been focused on particular aspects. It still requires fine resolution, uniform and smooth patterns, and low defectivity, not only after lithography but also after the etch process. Tokyo Electron Limited and imec are continuously collaborating to improve manufacturing quality of the process of record (POR) on a CLEAN TRACKTM LITHIUS ProTMZ-EUV. This next generation coating/developing system has been upgraded with defectivity reduction enhancements which are applied along with TELTM best known methods. We have evaluated process defectivity post lithography and post etch. Apart from defectivity, FIRMTM rinse material and application compatibility with sub 18nm patterning is improved to prevent line pattern collapse and increase process window on next generation resist materials. This paper reports on the progress of defectivity and patterning performance optimization towards the NXE:3300 POR.

Metal1 patterning study for random-logic applications with 193i, using calibrated OPC for litho and etch

NASA Astrophysics Data System (ADS)

Mailfert, Julien; Van de Kerkhove, Jeroen; De Bisschop, Peter; De Meyer, Kristin

2014-03-01

A Metal1-layer (M1) patterning study is conducted on 20nm node (N20) for random-logic applications. We quantified the printability performance on our test vehicle for N20, corresponding to Poly/M1 pitches of 90/64nm, and with a selected minimum M1 gap size of 70nm. The Metal1 layer is patterned with 193nm immersion lithography (193i) using Negative Tone Developer (NTD) resist, and a double-patterning Litho-Etch-Litho-Etch (LELE) process. Our study is based on Logic test blocks that we OPCed with a combination of calibrated models for litho and for etch. We report the Overlapping Process Window (OPW), based on a selection of test structures measured after-etch. We find that most of the OPW limiting structures are EOL (End-of-Line) configurations. Further analysis of these individual OPW limiters will reveal that they belong to different types, such as Resist 3D (R3D) and Mask 3D (M3D) sensitive structures, limiters related to OPC (Optical Proximity Corrections) options such as assist placement, or the choice of CD metrics and tolerances for calculation of the process windows itself. To guide this investigation, we will consider a `reference OPC' case to be compared with other solutions. In addition, rigorous simulations and OPC verifications will complete the after-etch measurements to help us to validate our experimental findings.

Field results from a new die-to-database reticle inspection platform

NASA Astrophysics Data System (ADS)

Broadbent, William; Yokoyama, Ichiro; Yu, Paul; Seki, Kazunori; Nomura, Ryohei; Schmalfuss, Heiko; Heumann, Jan; Sier, Jean-Paul

2007-05-01

A new die-to-database high-resolution reticle defect inspection platform, TeraScanHR, has been developed for advanced production use with the 45nm logic node, and extendable for development use with the 32nm node (also the comparable memory nodes). These nodes will use predominantly ArF immersion lithography although EUV may also be used. According to recent surveys, the predominant reticle types for the 45nm node are 6% simple tri-tone and COG. Other advanced reticle types may also be used for these nodes including: dark field alternating, Mask Enhancer, complex tri-tone, high transmission, CPL, etc. Finally, aggressive model based OPC will typically be used which will include many small structures such as jogs, serifs, and SRAF (sub-resolution assist features) with accompanying very small gaps between adjacent structures. The current generation of inspection systems is inadequate to meet these requirements. The architecture and performance of the new TeraScanHR reticle inspection platform is described. This new platform is designed to inspect the aforementioned reticle types in die-to-database and die-to-die modes using both transmitted and reflected illumination. Recent results from field testing at two of the three beta sites are shown (Toppan Printing in Japan and the Advanced Mask Technology Center in Germany). The results include applicable programmed defect test reticles and advanced 45nm product reticles (also comparable memory reticles). The results show high sensitivity and low false detections being achieved. The platform can also be configured for the current 65nm, 90nm, and 130nm nodes.

Advanced lithographic filtration and contamination control for 14nm node and beyond semiconductor processes

NASA Astrophysics Data System (ADS)

Varanasi, Rao; Mesawich, Michael; Connor, Patrick; Johnson, Lawrence

2017-03-01

Two versions of a specific 2nm rated filter containing filtration medium and all other components produced from high density polyethylene (HDPE), one subjected to standard cleaning, the other to specialized ultra-cleaning, were evaluated in terms of their cleanliness characteristics, and also defectivity of wafers processed with photoresist filtered through each. With respect to inherent cleanliness, the ultraclean version exhibited a 70% reduction in total metal extractables and 90% reduction in organics extractables compared to the standard clean version. In terms of particulate cleanliness, the ultraclean version achieved stability of effluent particles 30nm and larger in about half the time required by the standard clean version, also exhibiting effluent levels at stability almost 90% lower. In evaluating defectivity of blanket wafers processed with photoresist filtered through either version, initial defect density while using the ultraclean version was about half that observed when the standard clean version was in service, with defectivity also falling more rapidly during subsequent usage of the ultraclean version compared to the standard clean version. Similar behavior was observed for patterned wafers, where the enhanced defect reduction was primarily of bridging defects. The filter evaluation and actual process-oriented results demonstrate the extreme value in using filtration designed possessing the optimal intrinsic characteristics, but with further improvements possible through enhanced cleaning processes

Continuously tunable optical notch filter and band-pass filter systems that cover the visible to near-infrared spectral ranges.

PubMed

Jeong, Mi-Yun; Mang, Jin Yeob

2018-03-10

Spatially continuous tunable optical notch and band-pass filter systems that cover the visible (VIS) and near-infrared (NIR) spectral ranges from ∼460  nm to ∼1,000  nm are realized by combining left- and right-handed circular cholesteric liquid crystal (CLC) wedge cells with continuous pitch gradient. The notch filter system is polarization independent in all of the spectral ranges. The band-pass filter system, when the left- and right-handed CLCs are arranged in a row, is polarization independent, while when they are arranged at right angles, they are polarization dependent; furthermore, the full-width at half-maximum of the band-pass filter can be changed reversibly from the original bandwidth of 36 nm to 16 nm. Depending on the CLC materials, this strategy could be applied to the UV, VIS, and IR spectral ranges. Due to the high performance in the broad spectral range, cost-effective facile fabrication process, simple mechanical control, and small size, it is expected that our optical tunable filter strategies could become one of the key parts of laser-based Raman spectroscopy, fluorescence, life science devices, optical communication systems, astronomical telescopes, and so forth.

Tailoring the morphology and luminescence of GaN/InGaN core-shell nanowires using bottom-up selective-area epitaxy

NASA Astrophysics Data System (ADS)

Nami, Mohsen; Eller, Rhett F.; Okur, Serdal; Rishinaramangalam, Ashwin K.; Liu, Sheng; Brener, Igal; Feezell, Daniel F.

2017-01-01

Controlled bottom-up selective-area epitaxy (SAE) is used to tailor the morphology and photoluminescence properties of GaN/InGaN core-shell nanowire arrays. The nanowires are grown on c-plane sapphire substrates using pulsed-mode metal organic chemical vapor deposition. By varying the dielectric mask configuration and growth conditions, we achieve GaN nanowire cores with diameters ranging from 80 to 700 nm that exhibit various degrees of polar, semipolar, and nonpolar faceting. A single InGaN quantum well (QW) and GaN barrier shell is also grown on the GaN nanowire cores and micro-photoluminescence is obtained and analyzed for a variety of nanowire dimensions, array pitch spacings, and aperture diameters. By increasing the nanowire pitch spacing on the same growth wafer, the emission wavelength redshifts from 440 to 520 nm, while increasing the aperture diameter results in a ˜35 nm blueshift. The thickness of one QW/barrier period as a function of pitch and aperture diameter is inferred using scanning electron microscopy, with larger pitches showing significantly thicker QWs. Significant increases in indium composition were predicted for larger pitches and smaller aperture diameters. The results are interpreted in terms of local growth conditions and adatom capture radius around the nanowires. This work provides significant insight into the effects of mask configuration and growth conditions on the nanowire properties and is applicable to the engineering of monolithic multi-color nanowire LEDs on a single chip.

Alternative stitching method for massively parallel e-beam lithography

NASA Astrophysics Data System (ADS)

Brandt, Pieter; Tranquillin, Céline; Wieland, Marco; Bayle, Sébastien; Milléquant, Matthieu; Renault, Guillaume

2015-07-01

In this study, a stitching method other than soft edge (SE) and smart boundary (SB) is introduced and benchmarked against SE. The method is based on locally enhanced exposure latitude without throughput cost, making use of the fact that the two beams that pass through the stitching region can deposit up to 2× the nominal dose. The method requires a complex proximity effect correction that takes a preset stitching dose profile into account. Although the principle of the presented stitching method can be multibeam (lithography) systems in general, in this study, the MAPPER FLX 1200 tool is specifically considered. For the latter tool at a metal clip at minimum half-pitch of 32 nm, the stitching method effectively mitigates beam-to-beam (B2B) position errors such that they do not induce an increase in critical dimension uniformity (CDU). In other words, the same CDU can be realized inside the stitching region as outside the stitching region. For the SE method, the CDU inside is 0.3 nm higher than outside the stitching region. A 5-nm direct overlay impact from the B2B position errors cannot be reduced by a stitching strategy.

Study of nanoimprint lithography (NIL) for HVM of memory devices

NASA Astrophysics Data System (ADS)

Kono, Takuya; Hatano, Masayuki; Tokue, Hiroshi; Kobayashi, Kei; Suzuki, Masato; Fukuhara, Kazuya; Asano, Masafumi; Nakasugi, Tetsuro; Choi, Eun Hyuk; Jung, Wooyung

2017-03-01

A low cost alternative lithographic technology is desired to meet the decreasing feature size of semiconductor devices. Nano-imprint lithography (NIL) is one of the candidates for alternative lithographic technologies.[1][2][3] NIL has such advantages as good resolution, critical dimension (CD) uniformity and low line edge roughness (LER). On the other hand, the critical issues of NIL are defectivity, overlay, and throughput. In order to introduce NIL into the HVM, it is necessary to overcome these three challenges simultaneously.[4]-[12] In our previous study, we have reported a dramatic improvement in NIL process defectivity on a pilot line tool, FPA-1100 NZ2. We have described that the NIL process for 2x nm half pitch is getting closer to the target of HVM.[12] In this study, we report the recent evaluation of the NIL process performance to judge the applicability of NIL to memory device fabrications. In detail, the CD uniformity and LER are found to be less than 2nm. The overlay accuracy of the test device is less than 7nm. A defectivity level of below 1pcs./cm2 has been achieved at a throughput of 15 wafers per hour.

Challenge of Near-Field Recording beyond 50.4 Gbit/in2

NASA Astrophysics Data System (ADS)

Kishima, Koichiro; Ichimura, Isao; Saito, Kimihiro; Yamamoto, Kenji; Kuroda, Yuji; Iida, Atsushi; Masuhara, Shin; Osato, Kiyoshi

2002-03-01

The possibility of an areal density over 50 Gbit/in2 was examined in near-field phase-change recording. The disk structure was optimized to maximize readout signals under the land-and-groove recording condition at a tracking pitch of 160 nm. We also evaluated the signal crosstalk from adjacent tracks. Eye diagrams of 50.4 Gbit/in2 areal density were demonstrated using 1.5 \\mathit{NA} optics and a GaN laser diode. The track pitch and linear bit density are 160 nm and 80 nm/bit, respectively. The transmission electron microscope (TEM) micrograph of recorded amorphous marks at an areal density of 50.4 Gbit/in2 is also presented.

Design intent optimization at the beyond 7nm node: the intersection of DTCO and EUVL stochastic mitigation techniques

NASA Astrophysics Data System (ADS)

Crouse, Michael; Liebmann, Lars; Plachecki, Vince; Salama, Mohamed; Chen, Yulu; Saulnier, Nicole; Dunn, Derren; Matthew, Itty; Hsu, Stephen; Gronlund, Keith; Goodwin, Francis

2017-03-01

The initial readiness of EUV patterning was demonstrated in 2016 with IBM Alliance's 7nm device technology. The focus has now shifted to driving the 'effective' k1 factor and enabling the second generation of EUV patterning. Thus, Design Technology Co-optimization (DTCO) has become a critical part of technology enablement as scaling has become more challenging and the industry pushes the limits of EUV lithography. The working partnership between the design teams and the process development teams typically involves an iterative approach to evaluate the manufacturability of proposed designs, subsequent modifications to those designs and finally a design manual for the technology. While this approach has served the industry well for many generations, the challenges at the Beyond 7nm node require a more efficient approach. In this work, we describe the use of "Design Intent" lithographic layout optimization where we remove the iterative component of DTCO and replace it with an optimization that achieves both a "patterning friendly" design and minimizes the well-known EUV stochastic effects. Solved together, this "design intent" approach can more quickly achieve superior lithographic results while still meeting the original device's functional specifications. Specifically, in this work we will demonstrate "design intent" optimization for critical BEOL layers using design tolerance bands to guide the source mask co-optimization. The design tolerance bands can be either supplied as part of the original design or derived from some basic rules. Additionally, the EUV stochastic behavior is mitigated by enhancing the image log slope (ILS) for specific key features as part of the overall optimization. We will show the benefit of the "design intent approach" on both bidirectional and unidirectional 28nm min pitch standard logic layouts and compare the more typical iterative SMO approach. Thus demonstrating the benefit of allowing the design to float within the specified range. Lastly, we discuss how the evolution of this approach could lead to layout optimization based entirely on some minimal set of functional requirements and process constraints.

Demonstration of lithography patterns using reflective e-beam direct write

NASA Astrophysics Data System (ADS)

Freed, Regina; Sun, Jeff; Brodie, Alan; Petric, Paul; McCord, Mark; Ronse, Kurt; Haspeslagh, Luc; Vereecke, Bart

2011-04-01

Traditionally, e-beam direct write lithography has been too slow for most lithography applications. E-beam direct write lithography has been used for mask writing rather than wafer processing since the maximum blur requirements limit column beam current - which drives e-beam throughput. To print small features and a fine pitch with an e-beam tool requires a sacrifice in processing time unless one significantly increases the total number of beams on a single writing tool. Because of the uncertainty with regards to the optical lithography roadmap beyond the 22 nm technology node, the semiconductor equipment industry is in the process of designing and testing e-beam lithography tools with the potential for high volume wafer processing. For this work, we report on the development and current status of a new maskless, direct write e-beam lithography tool which has the potential for high volume lithography at and below the 22 nm technology node. A Reflective Electron Beam Lithography (REBL) tool is being developed for high throughput electron beam direct write maskless lithography. The system is targeting critical patterning steps at the 22 nm node and beyond at a capital cost equivalent to conventional lithography. Reflective Electron Beam Lithography incorporates a number of novel technologies to generate and expose lithographic patterns with a throughput and footprint comparable to current 193 nm immersion lithography systems. A patented, reflective electron optic or Digital Pattern Generator (DPG) enables the unique approach. The Digital Pattern Generator is a CMOS ASIC chip with an array of small, independently controllable lens elements (lenslets), which act as an array of electron mirrors. In this way, the REBL system is capable of generating the pattern to be written using massively parallel exposure by ~1 million beams at extremely high data rates (~ 1Tbps). A rotary stage concept using a rotating platen carrying multiple wafers optimizes the writing strategy of the DPG to achieve the capability of high throughput for sparse pattern wafer levels. The lens elements on the DPG are fabricated at IMEC (Leuven, Belgium) under IMEC's CMORE program. The CMOS fabricated DPG contains ~ 1,000,000 lens elements, allowing for 1,000,000 individually controllable beamlets. A single lens element consists of 5 electrodes, each of which can be set at controlled voltage levels to either absorb or reflect the electron beam. A system using a linear movable stage and the DPG integrated into the electron optics module was used to expose patterns on device representative wafers. Results of these exposure tests are discussed.

Multi-shaped beam: development status and update on lithography results

NASA Astrophysics Data System (ADS)

Slodowski, Matthias; Doering, Hans-Joachim; Dorl, Wolfgang; Stolberg, Ines A.

2011-04-01

According to the ITRS [1] photo mask is a significant challenge for the 22nm technology node requirements and beyond. Mask making capability and cost escalation continue to be critical for future lithography progress. On the technological side mask specifications and complexity have increased more quickly than the half-pitch requirements on the wafer designated by the roadmap due to advanced optical proximity correction and double patterning demands. From the economical perspective mask costs have significantly increased each generation, in which mask writing represents a major portion. The availability of a multi-electron-beam lithography system for mask write application is considered a potential solution to overcome these challenges [2, 3]. In this paper an update of the development status of a full-package high-throughput multi electron-beam writer, called Multi Shaped Beam (MSB), will be presented. Lithography performance results, which are most relevant for mask writing applications, will be disclosed. The MSB technology is an evolutionary development of the matured single Variable Shaped Beam (VSB) technology. An arrangement of Multi Deflection Arrays (MDA) allows operation with multiple shaped beams of variable size, which can be deflected and controlled individually [4]. This evolutionary MSB approach is associated with a lower level of risk and a relatively short time to implementation compared to the known revolutionary concepts [3, 5, 6]. Lithography performance is demonstrated through exposed pattern. Further details of the substrate positioning platform performance will be disclosed. It will become apparent that the MSB operational mode enables lithography on the same and higher performance level compared to single VSB and that there are no specific additional lithography challenges existing beside those which have already been addressed [1].

EUV patterning using CAR or MOX photoresist at low dose exposure for sub 36nm pitch

NASA Astrophysics Data System (ADS)

Thibaut, Sophie; Raley, Angélique; Lazarrino, Frederic; Mao, Ming; De Simone, Danilo; Piumi, Daniele; Barla, Kathy; Ko, Akiteru; Metz, Andrew; Kumar, Kaushik; Biolsi, Peter

2018-04-01

The semiconductor industry has been pushing the limits of scalability by combining 193nm immersion lithography with multi-patterning techniques for several years. Those integrations have been declined in a wide variety of options to lower their cost but retain their inherent variability and process complexity. EUV lithography offers a much desired path that allows for direct print of line and space at 36nm pitch and below and effectively addresses issues like cycle time, intra-level overlay and mask count costs associated with multi-patterning. However it also brings its own sets of challenges. One of the major barrier to high volume manufacturing implementation has been hitting the 250W power exposure required for adequate throughput [1]. Enabling patterning using a lower dose resist could help move us closer to the HVM throughput targets assuming required performance for roughness and pattern transfer can be met. As plasma etching is known to reduce line edge roughness on 193nm lithography printed features [2], we investigate in this paper the level of roughness that can be achieved on EUV photoresist exposed at a lower dose through etch process optimization into a typical back end of line film stack. We will study 16nm lines printed at 32 and 34nm pitch. MOX and CAR photoresist performance will be compared. We will review step by step etch chemistry development to reach adequate selectivity and roughness reduction to successfully pattern the target layer.

On the relation between pitch and level.

PubMed

Zheng, Yi; Brette, Romain

2017-05-01

Pitch is the perceptual dimension along which musical notes are ordered from low to high. It is often described as the perceptual correlate of the periodicity of the sound's waveform. Previous reports have shown that pitch can depend slightly on sound level. We wanted to verify that these observations reflect genuine changes in perceived pitch, and were not due to procedural factors or confusion between dimensions of pitch and level. We first conducted a systematic pitch matching task and confirmed that the pitch of low frequency pure tones, but not complex tones, decreases by an amount equivalent to a change in frequency of more than half a semitone when level increases. We then showed that the structure of pitch shifts is anti-symmetric and transitive, as expected for changes in pitch. We also observed shifts in the same direction (although smaller) in an interval matching task. Finally, we observed that musicians are more precise in pitch matching tasks than non-musicians but show the same average shifts with level. These combined experiments confirm that the pitch of low frequency pure tones depends weakly but systematically on level. These observations pose a challenge to current theories of pitch. Copyright © 2017 Elsevier B.V. All rights reserved.

Fabrication and characterization of high-efficiency double-sided blazed x-ray optics.

PubMed

Mohacsi, Istvan; Vartiainen, Ismo; Guizar-Sicairos, Manuel; Karvinen, Petri; Guzenko, Vitaliy A; Müller, Elisabeth; Kewish, Cameron M; Somogyi, Andrea; David, Christian

2016-01-15

The focusing efficiency of conventional diffractive x-ray lenses is fundamentally limited due to their symmetric binary structures and the corresponding symmetry of their focusing and defocusing diffraction orders. Fresnel zone plates with asymmetric structure profiles can break this limitation; yet existing implementations compromise either on resolution, ease of use, or stability. We present a new way for the fabrication of such blazed lenses by patterning two complementary binary Fresnel zone plates on the front and back sides of the same membrane chip to provide a compact, inherently stable, single-chip device. The presented blazed double-sided zone plates with 200 nm smallest half-pitch provide up to 54.7% focusing efficiency at 6.2 keV, which is clearly beyond the value obtainable by their binary counterparts.

Acid generation mechanism in anion-bound chemically amplified resists used for extreme ultraviolet lithography

NASA Astrophysics Data System (ADS)

Komuro, Yoshitaka; Yamamoto, Hiroki; Kobayashi, Kazuo; Ohomori, Katsumi; Kozawa, Takahiro

2015-03-01

Extreme ultraviolet (EUV) lithography is the most promising candidate for the high-volume production of semiconductor devices with half-pitches of sub 10nm. An anion-bound polymer(ABP), in which at the anion part of onium salts is polymerized, has attracted much attention from the viewpoint of the control of acid diffusion. In this study, the acid generation mechanism in ABP films was investigated using γ and EUV radiolysis. On the basis of experimental results, the acid generation mechanism in anion-bound chemically amplified resists was proposed. The protons of acids are considered to be mainly generated through the reaction of phenyl radicals with diphenylsulfide radical cations that are produced through the hole transfer to the decomposition products of onium salts.

Acid generation mechanism in anion-bound chemically amplified resists used for extreme ultraviolet lithography

NASA Astrophysics Data System (ADS)

Komuro, Yoshitaka; Yamamoto, Hiroki; Kobayashi, Kazuo; Utsumi, Yoshiyuki; Ohomori, Katsumi; Kozawa, Takahiro

2014-11-01

Extreme ultraviolet (EUV) lithography is the most promising candidate for the high-volume production of semiconductor devices with half-pitches of sub-10 nm. An anion-bound polymer (ABP), in which the anion part of onium salts is polymerized, has attracted much attention from the viewpoint of the control of acid diffusion. In this study, the acid generation mechanism in ABP films was investigated using electron (pulse), γ, and EUV radiolyses. On the basis of experimental results, the acid generation mechanism in anion-bound chemically amplified resists was proposed. The major path for proton generation in the absence of effective proton sources is considered to be the reaction of phenyl radicals with diphenylsulfide radical cations that are produced through hole transfer to the decomposition products of onium salts.

Nonlinear feedback control for high alpha flight

NASA Technical Reports Server (NTRS)

Stalford, Harold

1990-01-01

Analytical aerodynamic models are derived from a high alpha 6 DOF wind tunnel model. One detail model requires some interpolation between nonlinear functions of alpha. One analytical model requires no interpolation and as such is a completely continuous model. Flight path optimization is conducted on the basic maneuvers: half-loop, 90 degree pitch-up, and level turn. The optimal control analysis uses the derived analytical model in the equations of motion and is based on both moment and force equations. The maximum principle solution for the half-loop is poststall trajectory performing the half-loop in 13.6 seconds. The agility induced by thrust vectoring capability provided a minimum effect on reducing the maneuver time. By means of thrust vectoring control the 90 degrees pitch-up maneuver can be executed in a small place over a short time interval. The agility capability of thrust vectoring is quite beneficial for pitch-up maneuvers. The level turn results are based currently on only outer layer solutions of singular perturbation. Poststall solutions provide high turn rates but generate higher losses of energy than that of classical sustained solutions.

High Pressure Angle Gears: Comparison to Typical Gear Designs

NASA Technical Reports Server (NTRS)

Handschuh, Robert F.; Zabrajsek, Andrew J.

2010-01-01

A preliminary study has been completed to determine the feasibility of using high-pressure angle gears in aeronautic and space applications. Tests were conducted in the NASA Glenn Research Center (GRC) Spur Gear Test Facility at speeds up to 10,000 rpm and 73 N*m (648 in.*lb) for 3.18, 2.12, and 1.59 module gears (8, 12, and 16 diametral pitch gears), all designed to operate in the same test facility. The 3.18 module (8-diametral pitch), 28 tooth, 20deg pressure angle gears are the GRC baseline test specimen. Also, 2.12 module (12-diametral pitch), 42 tooth, 25deg pressure angle gears were tested. Finally 1.59 module (16-diametral pitch), 56 tooth, 35deg pressure angle gears were tested. The high-pressure angle gears were the most efficient when operated in the high-speed aerospace mode (10,000 rpm, lubricated with a synthetic turbine engine oil), and produced the lowest wear rates when tested with a perfluoroether-based grease. The grease tests were conducted at 150 rpm and 71 N*m (630 in.*lb).

Pushing the plasmonic imaging nanolithography to nano-manufacturing

NASA Astrophysics Data System (ADS)

Gao, Ping; Li, Xiong; Zhao, Zeyu; Ma, Xiaoliang; Pu, Mingbo; Wang, Changtao; Luo, Xiangang

2017-12-01

Suffering from the so-called diffraction limit, the minimum resolution of conventional photolithography is limited to λ / 2 or λ / 4, where λ is the incident wavelength. The physical mechanism of this limit lies at the fact that the evanescent waves that carry subwavelength information of the object decay exponentially in a medium, and cannot reach the image plane. Surface plasmons (SPs) are non-radiative electromagnetic waves that propagate along the interface between metal and dielectric, which exhibits unique sub-diffraction optical characteristics. In recent years, benefiting from SPs' features, researchers have proposed a variety of plasmonic lithography methods in the manner of interference, imaging and direct writing, and have demonstrated that sub-diffraction resolution could be achieved by theoretical simulations or experiments. Among the various plasmonic lithography modes, plasmonic imaging lithography seems to be of particular importance for applications due to its compatibility with conventional lithography. Recent results show that the half pitch of nanograting can be shrinked down to 22 nm and even 16 nm. This paper will give an overview of research progress, representative achievements of plasmonic imaging lithography, the remained problems and outlook of further developments.

Lithographic performance comparison with various RET for 45-nm node with hyper NA

NASA Astrophysics Data System (ADS)

Adachi, Takashi; Inazuki, Yuichi; Sutou, Takanori; Kitahata, Yasuhisa; Morikawa, Yasutaka; Toyama, Nobuhito; Mohri, Hiroshi; Hayashi, Naoya

2006-05-01

In order to realize 45 nm node lithography, strong resolution enhancement technology (RET) and water immersion will be needed. In this research, we discussed about various RET performance comparison for 45 nm node using 3D rigorous simulation. As a candidate, we chose binary mask (BIN), several kinds of attenuated phase-shifting mask (att-PSM) and chrome-less phase-shifting lithography mask (CPL). The printing performance was evaluated and compared for each RET options, after the optimizing illumination conditions, mask structure and optical proximity correction (OPC). The evaluation items of printing performance were CD-DOF, contrast-DOF, conventional ED-window and MEEF, etc. It's expected that effect of mask 3D topography becomes important at 45 nm node, so we argued about not only the case of ideal structures, but also the mask topography error effects. Several kinds of mask topography error were evaluated and we confirmed how these errors affect to printing performance.

Imperfect pitch: Gabor's uncertainty principle and the pitch of extremely brief sounds.

PubMed

Hsieh, I-Hui; Saberi, Kourosh

2016-02-01

How brief must a sound be before its pitch is no longer perceived? The uncertainty tradeoff between temporal and spectral resolution (Gabor's principle) limits the minimum duration required for accurate pitch identification or discrimination. Prior studies have reported that pitch can be extracted from sinusoidal pulses as brief as half a cycle. This finding has been used in a number of classic papers to develop models of pitch encoding. We have found that phase randomization, which eliminates timbre confounds, degrades this ability to chance, raising serious concerns over the foundation on which classic pitch models have been built. The current study investigated whether subthreshold pitch cues may still exist in partial-cycle pulses revealed through statistical integration in a time series containing multiple pulses. To this end, we measured frequency-discrimination thresholds in a two-interval forced-choice task for trains of partial-cycle random-phase tone pulses. We found that residual pitch cues exist in these pulses but discriminating them requires an order of magnitude (ten times) larger frequency difference than that reported previously, necessitating a re-evaluation of pitch models built on earlier findings. We also found that as pulse duration is decreased to less than two cycles its pitch becomes biased toward higher frequencies, consistent with predictions of an auto-correlation model of pitch extraction.

Neural Representation of Scale Illusion: Magnetoencephalographic Study on the Auditory Illusion Induced by Distinctive Tone Sequences in the Two Ears

PubMed Central

Kuriki, Shinya; Yokosawa, Koichi; Takahashi, Makoto

2013-01-01

The auditory illusory perception “scale illusion” occurs when a tone of ascending scale is presented in one ear, a tone of descending scale is presented simultaneously in the other ear, and vice versa. Most listeners hear illusory percepts of smooth pitch contours of the higher half of the scale in the right ear and the lower half in the left ear. Little is known about neural processes underlying the scale illusion. In this magnetoencephalographic study, we recorded steady-state responses to amplitude-modulated short tones having illusion-inducing pitch sequences, where the sound level of the modulated tones was manipulated to decrease monotonically with increase in pitch. The steady-state responses were decomposed into right- and left-sound components by means of separate modulation frequencies. It was found that the time course of the magnitude of response components of illusion-perceiving listeners was significantly correlated with smooth pitch contour of illusory percepts and that the time course of response components of stimulus-perceiving listeners was significantly correlated with discontinuous pitch contour of stimulus percepts in addition to the contour of illusory percepts. The results suggest that the percept of illusory pitch sequence was represented in the neural activity in or near the primary auditory cortex, i.e., the site of generation of auditory steady-state response, and that perception of scale illusion is maintained by automatic low-level processing. PMID:24086676

Expanding the printable design space for lithography processes utilizing a cut mask

NASA Astrophysics Data System (ADS)

Wandell, Jerome; Salama, Mohamed; Wilkinson, William; Curtice, Mark; Feng, Jui-Hsuan; Gao, Shao Wen; Asthana, Abhishek

2016-03-01

The utilization of a cut-mask in semiconductor patterning processes has been in practice for logic devices since the inception of 32nm-node devices, notably with unidirectional gate level printing. However, the microprocessor applications where cut-mask patterning methods are used are expanding as Self-Aligned Double Patterning (SADP) processes become mainstream for 22/14nm fin diffusion, and sub-14nm metal levels. One common weakness for these types of lithography processes is that the initial pattern requiring the follow-up cut-mask typically uses an extreme off-axis imaging source such as dipole to enhance the resolution and line-width roughness (LWR) for critical dense patterns. This source condition suffers from poor process margin in the semi-dense (forbidden pitch) realm and wrong-way directional design spaces. Common pattern failures in these limited design regions include bridging and extra-printing defects that are difficult to resolve with traditional mask improvement means. This forces the device maker to limit the allowable geometries that a designer may use on a device layer. This paper will demonstrate methods to expand the usable design space on dipole-like processes such as unidirectional gate and SADP processes by utilizing the follow-up cut mask to improve the process window. Traditional mask enhancement means for improving the process window in this design realm will be compared to this new cut-mask approach. The unique advantages and disadvantages of the cut-mask solution will be discussed in contrast to those customary methods.

Application of variable teeth pitch face mill as chatter suppression method for non-rigid technological system

NASA Astrophysics Data System (ADS)

Svinin, V. M.; Savilov, A. V.

2018-03-01

The article describes the results of experimental studies on the effects of variation type for variable teeth pitches on low-rigidity workpiece chatter suppression efficiency in a feed direction and in a direction of the normal to the machined surface. Mill operation performance was identified by comparing the amplitudes of dominant chatter harmonics using constant and variable teeth pitches. The following variable pitch formation variants were studied: alternative, linear rising, and linear rising falling. The angle difference of adjacent teeth pitches ranged from 0 to 10°, from 5 to 8° and from 5 to 10° with interval of 1°. The experiments showed that for all variants, machining dynamics performance resulted from the difference of adjacent pitches corresponding to a half the chatter wavelength along the cutting surface. The alternative nature of a variable teeth pitch is most efficient as it almost completely suppresses the chatters. Theoretical explanations of the results are presented

Connected component analysis of review-SEM images for sub-10nm node process verification

NASA Astrophysics Data System (ADS)

Halder, Sandip; Leray, Philippe; Sah, Kaushik; Cross, Andrew; Parisi, Paolo

2017-03-01

Analysis of hotspots is becoming more and more critical as we scale from node to node. To define true process windows at sub-14 nm technology nodes, often defect inspections are being included to weed out design weak spots (often referred to as hotspots). Defect inspection sub 28 nm nodes is a two pass process. Defect locations identified by optical inspection tools need to be reviewed by review-SEM's to understand exactly which feature is failing in the region flagged by the optical tool. The images grabbed by the review-SEM tool are used for classification but rarely for quantification. The goal of this paper is to see if the thousands of review-SEM images which are existing can be used for quantification and further analysis. More specifically we address the SEM quantification problem with connected component analysis.

Ultrafast optical measurements of surface waves on a patterned layered nanostructure

NASA Astrophysics Data System (ADS)

Daly, Brian; Bjornsson, Matteo; Connolly, Aine; Mahat, Sushant; Rachmilowitz, Bryan; Antonelli, George; Myers, Alan; Yoo, Hui-Jae; Singh, Kanwal; King, Sean

2015-03-01

We report ultrafast optical pump-probe measurements of 12 - 54 GHz surface acoustic waves (SAWs) on patterned layered nanostructures. These very high frequency SAWs were generated and detected on the following patterned film stack: 25 nm physically vapor deposited TiN / 180 nm porous PECVD-grown a-SiOC:H dielectric / 12 nm non-porous PECVD-grown a-SiOC:H etch-stop / 100 nm CVD-grown a-SiO2 / Si (100) substrate. The TiN layer was dry plasma etched to form lines of rectangular cross section with pitches of 420 nm, 250 nm, 180 nm, and 168 nm and the lines were oriented parallel to the [110] direction on the wafer surface. The absorption of ultrafast pulses from a Ti:sapphire oscillator operating at 800 nm generated SAWs that were detected by time-delayed probe pulses from the same oscillator via a reflectivity change (ΔR) . In each of the four cases the SAW frequency increased with decreasing pitch, but not in a linear way as had been seen in previous experiments of this sort. By comparing the results with mechanical simulations, we present evidence for the detection of different types of SAWs in each case, including Rayleigh-like waves, Sezawa waves, and leaky or radiative waves. This work was supported by NSF Award DMR1206681.

Half pitch lower sound perception caused by carbamazepine.

PubMed

Konno, Shyu; Yamazaki, Etsuko; Kudoh, Masako; Abe, Takashi; Tohgi, Hideo

2003-09-01

We report a 16-year-old woman with secondary generalization of partial seizure, who complained of an auditory disturbance after carbamazepine (CBZ) administration. She had been taking sodium valproate (VPA) from the age of 15. However, her seizures remained poorly controlled. We changed her antiepileptic drug from VPA to CBZ. At 1 week after CBZ administration, she noticed that electone musical performances were heard as a semitone lower. When oral administration of CBZ was stopped, her pitch perception returned to normal. If she had not been able to discern absolute pitch, she might have been unable to recognize her lowered pitch perception. Auditory disturbance caused by CBZ is reversible and very rare.

High-density patterned media fabrication using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Ramos, Rick; Brooks, Cynthia; Simpson, Logan; Fretwell, John; Carden, Scott; Hellebrekers, Paul; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2011-04-01

The Jet and Flash Imprint Lithography (J-FIL®) process uses drop dispensing of UV curable resists for high resolution patterning. Several applications, including patterned media, are better, and more economically served by a full substrate patterning process since the alignment requirements are minimal. Patterned media is particularly challenging because of the aggressive feature sizes necessary to achieve storage densities required for manufacturing beyond the current technology of perpendicular recording. In this paper, the key process steps for the application of J-FIL to pattern media fabrication are reviewed with special attention to substrate cleaning, vapor adhesion of the adhesion layer and imprint performance at >300 disk per hour. Also discussed are recent results for imprinting discrete track patterns at half pitches of 24nm and bit patterned media patterns at densities of 1 Tb/in2.

Defect inspection and printability study for 14 nm node and beyond photomask

NASA Astrophysics Data System (ADS)

Seki, Kazunori; Yonetani, Masashi; Badger, Karen; Dechene, Dan J.; Akima, Shinji

2016-10-01

Two different mask inspection techniques are developed and compared for 14 nm node and beyond photomasks, High resolution and Litho-based inspection. High resolution inspection is the general inspection method in which a 19x nm wavelength laser is used with the High NA inspection optics. Litho-based inspection is a new inspection technology. This inspection uses the wafer lithography information, and as such, this method has automatic defect classification capability which is based on wafer printability. Both High resolution and Litho-based inspection methods are compared using 14 nm and 7 nm node programmed defect and production design masks. The defect sensitivity and mask inspectability is compared, in addition to comparing the defect classification and throughput. Additionally, the Cost / Infrastructure comparison is analyzed and the impact of each inspection method is discussed.

EUV focus sensor: design and modeling

NASA Astrophysics Data System (ADS)

Goldberg, Kenneth A.; Teyssier, Maureen E.; Liddle, J. Alexander

2005-05-01

We describe performance modeling and design optimization of a prototype EUV focus sensor (FS) designed for use with existing 0.3-NA EUV projection-lithography tools. At 0.3-NA and 13.5-nm wavelength, the depth of focus shrinks to 150 nm increasing the importance of high-sensitivity focal-plane detection tools. The FS is a free-standing Ni grating structure that works in concert with a simple mask pattern of regular lines and spaces at constant pitch. The FS pitch matches that of the image-plane aerial-image intensity: it transmits the light with high efficiency when the grating is aligned with the aerial image laterally and longitudinally. Using a single-element photodetector, to detect the transmitted flux, the FS is scanned laterally and longitudinally so the plane of peak aerial-image contrast can be found. The design under consideration has a fixed image-plane pitch of 80-nm, with aperture widths of 12-40-nm (1-3 wave-lengths), and aspect ratios of 2-8. TEMPEST-3D is used to model the light transmission. Careful attention is paid to the annular, partially coherent, unpolarized illumination and to the annular pupil of the Micro-Exposure Tool (MET) optics for which the FS is designed. The system design balances the opposing needs of high sensitivity and high throughput opti-mizing the signal-to-noise ratio in the measured intensity contrast.

EUV Focus Sensor: Design and Modeling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldberg, Kenneth A.; Teyssier, Maureen E.; Liddle, J. Alexander

We describe performance modeling and design optimization of a prototype EUV focus sensor (FS) designed for use with existing 0.3-NA EUV projection-lithography tools. At 0.3-NA and 13.5-nm wavelength, the depth of focus shrinks to 150 nm increasing the importance of high-sensitivity focal-plane detection tools. The FS is a free-standing Ni grating structure that works in concert with a simple mask pattern of regular lines and spaces at constant pitch. The FS pitch matches that of the image-plane aerial-image intensity: it transmits the light with high efficiency when the grating is aligned with the aerial image laterally and longitudinally. Using amore » single-element photodetector, to detect the transmitted flux, the FS is scanned laterally and longitudinally so the plane of peak aerial-image contrast can be found. The design under consideration has a fixed image-plane pitch of 80-nm, with aperture widths of 12-40-nm (1-3 wavelengths), and aspect ratios of 2-8. TEMPEST-3D is used to model the light transmission. Careful attention is paid to the annular, partially coherent, unpolarized illumination and to the annular pupil of the Micro-Exposure Tool (MET) optics for which the FS is designed. The system design balances the opposing needs of high sensitivity and high throughput optimizing the signal-to-noise ratio in the measured intensity contrast.« less

Radiation Performance of 1 Gbit DDR SDRAMs Fabricated in the 90 nm CMOS Technology Node

NASA Technical Reports Server (NTRS)

Ladbury, Raymond L.; Gorelick, Jerry L.; Berg, M. D.; Kim, H.; LaBel, K.; Friendlich, M.; Koga, R.; George, J.; Crain, S.; Yu, P.;

Modelling and simulation of high-frequency (100 MHz) ultrasonic linear arrays based on single crystal LiNbO3.

PubMed

Zhang, J Y; Xu, W J; Carlier, J; Ji, X M; Nongaillard, B; Queste, S; Huang, Y P

2012-01-01

High-frequency ultrasonic transducer arrays are essential for high resolution imaging in clinical analysis and Non-Destructive Evaluation (NDE). However, the fabrication of conventional backing-layer structure, which requires a pitch (distance between the centers of two adjacent elements) of half wavelength in medium, is really a great challenge. Here we present an alternative buffer-layer structure with a silicon lens for volumetric imaging. The requirement for the size of the pitch is less critical for this structure, making it possible to fabricate high-frequency (100MHz) ultrasonic linear array transducers. Using silicon substrate also makes it possible to integrate the arrays with IC (Integrated Circuit). To compare with the conventional backing-layer structure, a finite element tool, COMSOL, is employed to investigate the performances of acoustic beam focusing, the influence of pitch size for the buffer-layer configuration, and to calculate the electrical properties of the arrays, including crosstalk effect and electrical impedance. For a 100MHz 10-element array of buffer-layer structure, the ultrasound beam in azimuth plane in water could be electronically focused to obtain a spatial resolution (a half-amplitude width) of 86μm at the focal depth. When decreasing from half wavelength in silicon (42μm) to half wavelength in water (7.5μm), the pitch sizes weakly affect the focal resolution. The lateral spatial resolution is increased by 4.65% when the pitch size decreases from 42μm to 7.5μm. The crosstalk between adjacent elements at the central frequency is, respectively, -95dB, -39.4dB, and -60.5dB for the 10-element buffer, 49-element buffer and 49-element backing arrays. Additionally, the electrical impedance magnitudes for each structure are, respectively, 4kΩ, 26.4kΩ, and 24.2kΩ, which is consistent with calculation results using Krimholtz, Leedom, and Matthaei (KLM) model. These results show that the buffer-layer configuration is a promising alternative for the fabrication of high-frequency ultrasonic linear arrays dedicated to volumetric imaging. Copyright © 2011 Elsevier B.V. All rights reserved.

DNA detection on ultrahigh-density optical fiber-based nanoarrays.

PubMed

Tam, Jenny M; Song, Linan; Walt, David R

2009-04-15

Nanoarrays for DNA detection were fabricated on etched nanofiber bundles based on recently developed techniques for microscale arrays. Two different-sized nanoarrays were created: one with 700 nm feature sizes and a 1 microm center-to-center pitch (approximately 1x10(6) array elements/mm(2)) and one with 300 nm feature sizes and a 500 nm center-to-center pitch (4.6x10(6) array elements/mm(2)). A random, multiplexed array composed of oligonucleotide-functionalized nanospheres was constructed and used for parallel detection and analysis of fluorescently labeled DNA targets. We have used these arrays to detect a variety of target sequences including Bacillus thuringiensis kurstaki and vaccina virus sequences, two potential biowarfare agents, as well as interleukin-2 sequences, an immune system modulator that has been used for the diagnosis of HIV.

Disposable gold coated pyramidal SERS sensor on the plastic platform.

PubMed

Oo, S Z; Siitonen, S; Kontturi, V; Eustace, D A; Charlton, M D B

2016-01-11

In this paper we investigate suitability of arrays of gold coated pyramids for surface-enhanced Raman scattering (SERS) sensing applications. Pyramidarrays composed of 1000 nm pit size with 1250 nm pitch lengthwerereplicated on a plastic substrate by roll-to-roll (R2R) ultraviolet (UV) embossing. The level of SERS enhancement, and qualitative performance provided by the new substrate is investigated by comparing Raman spectrum of benzenethiol (BTh) test molecules to the benchmark Klarite SERS substrate which comprises inverted pyramid arrays(1500 nm pit size with 2000 nm pitch length) fabricated on a silicon substrate. The new substrate is found to provide upto 11 times increase in signal in comparison to the inverted pyramid (IV-pyramid) arrays fabricated on an identical plastic substrate. Numerical simulation and experimental evidence suggest that strongly confined electromagnetic fields close to the base of the pyramids, are mainly responsible for the Raman enhancement factor, instead of the fields localized around the tip. Unusually strong plasmon fields are projected upto 200nm from the sidewalls at the base of the pyramid increasing the cross sectional sensing volume.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Manfrinato, Vitor R.; Stein, Aaron; Zhang, Lihua

Patterning materials efficiently at the smallest length scales has been a longstanding challenge in nanotechnology. Electron-beam lithography (EBL) is the primary method for patterning arbitrary features, but EBL has not reliably provided sub-4 nm patterns. The few competing techniques that have achieved this resolution are orders of magnitude slower than EBL. In this work, we employed an aberration-corrected scanning transmission electron microscope for lithography to achieve unprecedented resolution. Here we show aberration-corrected EBL at the one nanometer length scale using poly(methyl methacrylate) (PMMA) and have produced both the smallest isolated feature in any conventional resist (1.7 ± 0.5 nm) andmore » the highest density patterns in PMMA (10.7 nm pitch for negative-tone and 17.5 nm pitch for positive-tone PMMA). We also demonstrate pattern transfer from the resist to semiconductor and metallic materials at the sub-5 nm scale. These results indicate that polymer-based nanofabrication can achieve feature sizes comparable to the Kuhn length of PMMA and ten times smaller than its radius of gyration. Use of aberration-corrected EBL will increase the resolution, speed, and complexity in nanomaterial fabrication.« less

A high resolution water soluble fullerene molecular resist for electron beam lithography.

PubMed

Chen, X; Palmer, R E; Robinson, A P G

2008-07-09

Traditionally, many lithography resists have used hazardous, environmentally damaging or flammable chemicals as casting solvent and developer. There is now a strong drive towards processes that are safer and more environmentally friendly. We report nanometre-scale patterning of a fullerene molecular resist film with electron beam lithography, using water as casting solvent and developer. Negative tone behaviour is demonstrated after exposure and development. The sensitivity of this resist to 20 keV electrons is 1.5 × 10(-2) C cm(-2). Arrays of lines with a width of 30-35 nm and pitches of 200 and 400 nm, and arrays of dots with a diameter of 40 nm and a pitch of 200 nm have been patterned at 30 keV. The etch durability of this resist was found to be ∼2 times that of a standard novolac based resist. Initial results of the chemical amplification of this material for enhanced sensitivity are also presented.

Day of Launch Profile Selection for Pad Abort Guidance

NASA Technical Reports Server (NTRS)

Whitley, Ryan J.

2010-01-01

A day of launch selection approach that involves choosing from an array of pitch profiles of varying loft was analyzed with the purpose of reducing the risk of a land landing failure during a pad abort. It was determined that selecting from three pitch profiles can reduce the number of waterline abort performance requirement failures approximately in half without compromising other performance metrics.

Blue phase-change recording at high data densities and data rates

NASA Astrophysics Data System (ADS)

Dekker, Martijn K.; Pfeffer, Nicola; Kuijper, Maarten; Ubbens, Igolt P.; Coene, Wim M. J.; Meinders, E. R.; Borg, Herman J.

2000-09-01

For the DVR system with the use of a blue laser diode (wavelength 405 nm) we developed (12 cm) discs with a total capacity of 22.4 GB. The land/groove track pitch is 0.30 micrometers and the channel bit length is 87 nm. The DVR system uses a d equals 1 code. These phase change discs can be recorded at continuous angular velocity at a maximum of 50 Mbps user data rate (including all format and ECC overhead) and meet the system specifications. Fast growth determined phase change materials (FGM) are used for the active layer. In order to apply these FGM discs at small track pitch special attention has been paid to the issue of thermal cross-write. Finally routes towards higher capacities such as advanced bit detection schemes and the use of a smaller track pitch are considered. These show the feasibility in the near future of at least 26.0 GB on a disc for the DVR system with a blue laser diode.

Tracing Cadmium from Culture to Spikelet: Noninvasive Imaging and Quantitative Characterization of Absorption, Transport, and Accumulation of Cadmium in an Intact Rice Plant1[W][OA

PubMed Central

Fujimaki, Shu; Suzui, Nobuo; Ishioka, Noriko S.; Kawachi, Naoki; Ito, Sayuri; Chino, Mitsuo; Nakamura, Shin-ichi

2010-01-01

We characterized the absorption and short-term translocation of cadmium (Cd) in rice (Oryza sativa ‘Nipponbare’) quantitatively using serial images observed with a positron-emitting tracer imaging system. We fed a positron-emitting 107Cd (half-life of 6.5 h) tracer to the hydroponic culture solution and noninvasively obtained serial images of Cd distribution in intact rice plants at the vegetative stage and at the grain-filling stage every 4 min for 36 h. The rates of absorption of Cd by the root were proportional to Cd concentrations in the culture solution within the tested range of 0.05 to 100 nm. It was estimated that the radial transport from the culture to the xylem in the root tissue was completed in less than 10 min. Cd moved up through the shoot organs with velocities of a few centimeters per hour at both stages, which was obviously slower than the bulk flow in the xylem. Finally, Cd arrived at the panicles 7 h after feeding and accumulated there constantly, although no Cd was observed in the leaf blades within the initial 36 h. The nodes exhibited the most intensive Cd accumulation in the shoot at both stages, and Cd transport from the basal nodes to crown root tips was observed at the vegetative stage. We conclude that the nodes are the central organ where xylem-to-phloem transfer takes place and play a pivotal role in the half-day travel of Cd from the soil to the grains at the grain-filling stage. PMID:20172965

Construction of supramolecular helical nanofibers using renewable biomaterials: self-assembly of a cytidylic acid-appended bolaamphiphile in lemon juice.

PubMed

Iwaura, Rika; Ohnishi-Kameyama, Mayumi

2012-07-07

We performed the self-assembly of a 1,18-cytidylic acid-appended bolaamphiphile (C18C) in lemon juice, which contained citric acid, and succeeded in forming left-handed helical nanofibers with diameters, lengths, and pitches of ca. 6-7 nm, several hundred nm to 5 μm, and ca. 30-40 nm, respectively.

A hybrid nanomemristor/transistor logic circuit capable of self-programming

PubMed Central

Borghetti, Julien; Li, Zhiyong; Straznicky, Joseph; Li, Xuema; Ohlberg, Douglas A. A.; Wu, Wei; Stewart, Duncan R.; Williams, R. Stanley

2009-01-01

Memristor crossbars were fabricated at 40 nm half-pitch, using nanoimprint lithography on the same substrate with Si metal-oxide-semiconductor field effect transistor (MOS FET) arrays to form fully integrated hybrid memory resistor (memristor)/transistor circuits. The digitally configured memristor crossbars were used to perform logic functions, to serve as a routing fabric for interconnecting the FETs and as the target for storing information. As an illustrative demonstration, the compound Boolean logic operation (A AND B) OR (C AND D) was performed with kilohertz frequency inputs, using resistor-based logic in a memristor crossbar with FET inverter/amplifier outputs. By routing the output signal of a logic operation back onto a target memristor inside the array, the crossbar was conditionally configured by setting the state of a nonvolatile switch. Such conditional programming illuminates the way for a variety of self-programmed logic arrays, and for electronic synaptic computing. PMID:19171903

A hybrid nanomemristor/transistor logic circuit capable of self-programming.

PubMed

Borghetti, Julien; Li, Zhiyong; Straznicky, Joseph; Li, Xuema; Ohlberg, Douglas A A; Wu, Wei; Stewart, Duncan R; Williams, R Stanley

2009-02-10

Memristor crossbars were fabricated at 40 nm half-pitch, using nanoimprint lithography on the same substrate with Si metal-oxide-semiconductor field effect transistor (MOS FET) arrays to form fully integrated hybrid memory resistor (memristor)/transistor circuits. The digitally configured memristor crossbars were used to perform logic functions, to serve as a routing fabric for interconnecting the FETs and as the target for storing information. As an illustrative demonstration, the compound Boolean logic operation (A AND B) OR (C AND D) was performed with kilohertz frequency inputs, using resistor-based logic in a memristor crossbar with FET inverter/amplifier outputs. By routing the output signal of a logic operation back onto a target memristor inside the array, the crossbar was conditionally configured by setting the state of a nonvolatile switch. Such conditional programming illuminates the way for a variety of self-programmed logic arrays, and for electronic synaptic computing.

[Volume changes to the neck lymph node metastases in head-neck tumors. The evaluation of radiotherapeutic treatment success].

PubMed

Liszka, G; Thalacker, U; Somogyi, A; Németh, G

1997-08-01

This work is engaged with the volume change of neck lymph node metastasis of malignant tumors in the head-neck region during radiotherapy. In 54 patients with head and neck tumors, the volume of neck lymph nodes before and after radiation was measured. The volumetry was done with CT planimetry. The total dose was 66 Gy (2 Gy/d) telecobalt from 2 lateral opponated fields. The time of volume change could be defined with measuring of the half-time and the doubling-time by the help of Schwartz formula. After 10 Gy the volume diminution was about 20% and half-time 24 to 26 days. Afterwards the time of volume diminution picked up speed and finally achieved 60 to 72%. Meanwhile the half-time decreased to the half value. The result was independent of the site of primary tumor, the patient's sex and age. In our opinion the effectivity of radiotherapy can best be judged with defining of the volume change of lymph nodes of the neck.

3D analysis of the movements of the laryngeal cartilages during singing.

PubMed

Unteregger, Fabian; Honegger, Flurin; Potthast, Silke; Zwicky, Salome; Schiwowa, Julia; Storck, Claudio

2017-07-01

The vocal range of untrained singers rarely exceeds one and a half octaves, but professional singers have a range of at least two and a half octaves. The aim of this study was to better understand the muscle and cartilage movements responsible for the control of vocal pitch in singing. Prospective study. We recruited 49 female professional singers (25 sopranos and 24 altos) and analyzed laryngeal three-dimensional images derived from high-resolution computed tomography scans obtained at the mean speaking fundamental frequency (F0) and at one (F1) and two octaves (F2) above this pitch. From F0 to F1, the only observable movement was a backward cricoid tilting caused by the cricothyroid muscles (CTMs), leading to vocal fold stretching. Above F1, a medial rotation and inward rocking of the arytenoid cartilages was observed, caused by the lateral cricothyroid muscles (LCAMs) and leading to inferior displacement of the vocal process of the arytenoid cartilage, and thus to further vocal fold stretching. Trained singers achieve the first octave of pitch elevation by simple cricothyroid approximation. Further pitch elevation necessitates a complex movement of the arytenoids, first by CTM contraction and second by LCAM contraction. 4. Laryngoscope, 127:1639-1643, 2017. © 2016 The American Laryngological, Rhinological and Otological Society, Inc.

Status of EUVL mask development in Europe (Invited Paper)

NASA Astrophysics Data System (ADS)

Peters, Jan H.

2005-06-01

EUV lithography is the prime candidate for the next generation lithography technology after 193 nm immersion lithography. The commercial onset for this technology is expected for the 45 nm half-pitch technology or below. Several European and national projects and quite a large number of companies and research institutions in Europe work on various aspects of the technological challenges to make EUV a commercially viable technology in the not so far future. Here the development of EUV sources, the development of an EUV exposure tools, metrology tools dedicated for characterization of mask, the production of EUV mask blanks and the mask structuring itself are the key areas in which major activities can be found. In this talk we will primarily focus on those activities, which are related to establish an EUV mask supply chain with all its ingredients from substrate production, polishing, deposition of EUV layers, blank characterization, mask patterning process and the consecutive metrology and defect inspection as well as shipping and handling from blank supply to usage in the wafer fab. The EUV mask related projects on the national level are primarily supported by the French Ministry of Economics and Finance (MinEFi) and the German Ministry of Education and Research (BMBF).

Preparation and evaluation of poly(2-hydroxyethyl aspartamide)-hexadecylamine-iron oxide for MR imaging of lymph nodes

PubMed Central

2014-01-01

The purpose of this study was to synthesize biocompatible poly(2-hydroxyethyl aspartamide)–C16-iron oxide (PHEA-C16-iron oxide) nanoparticles and to evaluate their efficacy as a contrast agent for magnetic resonance imaging of lymph nodes. The PHEA-C16-iron oxide nanoparticles were synthesized by coprecipitation method. The core size of the PHEA-C16-iron oxide nanoparticles was about 5 to 7 nm, and the overall size of the nanoparticles was around 20, 60, and 150 nm in aqueous solution. The size of the nanoparticles was controlled by the amount of C16. The 3.0-T MRI signal intensity of a rabbit lymph node was effectively reduced after intravenous administration of PHEA-C16-iron oxide with the size of 20 nm. The in vitro and in vivo toxicity tests revealed the high biocompatibility of PHEA-C16-iron oxide nanoparticles. Therefore, PHEA-C16-iron oxide nanoparticles with 20-nm size can be potentially useful as T2-weighted MR imaging contrast agents for the detection of lymph nodes. PMID:24438671

N7 logic via patterning using templated DSA: implementation aspects

NASA Astrophysics Data System (ADS)

Bekaert, J.; Doise, J.; Gronheid, R.; Ryckaert, J.; Vandenberghe, G.; Fenger, G.; Her, Y. J.; Cao, Y.

2015-07-01

In recent years, major advancements have been made in the directed self-assembly (DSA) of block copolymers (BCP). Insertion of DSA for IC fabrication is seriously considered for the 7 nm node. At this node the DSA technology could alleviate costs for multiple patterning and limit the number of masks that would be required per layer. At imec, multiple approaches for inserting DSA into the 7 nm node are considered. One of the most straightforward approaches for implementation would be for via patterning through templated DSA; a grapho-epitaxy flow using cylindrical phase BCP material resulting in contact hole multiplication within a litho-defined pre-pattern. To be implemented for 7 nm node via patterning, not only the appropriate process flow needs to be available, but also DSA-aware mask decomposition is required. In this paper, several aspects of the imec approach for implementing templated DSA will be discussed, including experimental demonstration of density effect mitigation, DSA hole pattern transfer and double DSA patterning, creation of a compact DSA model. Using an actual 7 nm node logic layout, we derive DSA-friendly design rules in a logical way from a lithographer's view point. A concrete assessment is provided on how DSA-friendly design could potentially reduce the number of Via masks for a place-and-routed N7 logic pattern.

Mapping Sequence performed during the STS-120 R-Bar Pitch Maneuver

NASA Image and Video Library

2007-10-25

ISS016-E-005926 (25 Oct. 2007) --- A close-up view of the Harmony node in the payload bay of Space Shuttle Discovery is provided by this image photographed by an Expedition 16 crewmember during a backflip maneuver performed by the approaching visitors (STS-120) to the International Space Station.

Photomask quality assessment solution for 90-nm technology node

NASA Astrophysics Data System (ADS)

Ohira, Katsumi; Chung, Dong Hoon P.; Nobuyuki, Yoshioka; Tateno, Motonari; Matsumura, Kenichi; Chen, Jiunn-Hung; Luk-Pat, Gerard T.; Fukui, Norio; Tanaka, Yoshio

2004-08-01

As 90 nm LSI devices are about to enter pre-production, the cost and turn-around time of photomasks for such devices will be key factors for success in device production. Such devices will be manufactured with state-of-the-art 193nm photolithography systems. Photomasks for these devices are being produced with the most advanced equipment, material and processing technologies and yet, quality assurance still remains an issue for volume production. These issues include defect classification and disposition due to the insufficient resolution of the defect inspection system at conventional review and classification processes and to aggressive RETs, uncertainty of the impact the defects have on the printed feature as well as inconsistencies of classical defect specifications as applied in the sub-wavelength era are becoming a serious problem. Simulation-based photomask qualification using the Virtual Stepper System is widely accepted today as a reliable mask quality assessment tool of mask defects for both the 180 nm and 130 nm technology nodes. This study examines the extendibility of the Virtual Stepper System to 90nm technology node. The proposed method of simulation-based mask qualification uses aerial image defect simulation in combination with a next generation DUV inspection system with shorter wavelength (266nm) and small pixel size combined with DUV high-resolution microscope for some defect cases. This paper will present experimental results that prove the applicability for enabling 90nm technology nodes. Both contact and line/space patterns with varies programmed defects on ArF Attenuated PSM will be used. This paper will also address how to make the strategy production-worthy.

Atomic layer deposition frequency-multiplied Fresnel zone plates for hard x-rays focusing

DOE PAGES

Moldovan, Nicolaie; Divan, Ralu; Zeng, Hongjun; ...

2017-12-01

The design and fabrication of Fresnel zone plates for hard x-ray focusing up to 25 keV photon energies with better than 50 nm imaging half-pitch resolution is reported as performed by forming an ultrananocrystalline diamond (UNCD) scaffold, subsequently coating it with atomic layer deposition (ALD) with an absorber/phase shifting material, followed by back side etching of Si to form a diamond membrane device. The scaffold is formed by chemical vapor-deposited UNCD, electron beam lithography, and deep-reactive ion etching of diamond to desired specifications. The benefits of using diamond are as follows: improved mechanical robustness to prevent collapse of high-aspect-ratio ringmore » structures, a known high-aspect-ratio etch method, excellent radiation hardness, extremely low x-ray absorption, and significantly improved thermal/dimensional stability as compared to alternative materials. Central to the technology is the high-resolution patterning of diamond membranes at wafer scale, which was pushed to 60 nm lines and spaces etched 2.2-mu m-deep, to an aspect ratio of 36:1. The absorber growth was achieved by ALD of Ir, Pt, or W, while wafer-level processing allowed to obtain up to 121 device chips per 4 in. wafer with yields better than 60%. X-ray tests with such zone plates allowed resolving 50 nm lines and spaces, at the limit of the available resolution test structures.« less

Construction of an instant structured illumination microscope

PubMed Central

Curd, Alistair; Cleasby, Alexa; Makowska, Katarzyna; York, Andrew; Shroff, Hari; Peckham, Michelle

2015-01-01

A challenge in biological imaging is to capture high-resolution images at fast frame rates in live cells. The “instant structured illumination microscope” (iSIM) is a system designed for this purpose. Similarly to standard structured illumination microscopy (SIM), an iSIM provides a twofold improvement over widefield microscopy, in x, y and z, but also allows much faster image acquisition, with real-time display of super-resolution images. The assembly of an iSIM is reasonably complex, involving the combination and alignment of many optical components, including three micro-optics arrays (two lenslet arrays and an array of pinholes, all with a pitch of 222 μm) and a double-sided scanning mirror. In addition, a number of electronic components must be correctly controlled. Construction of the system is therefore not trivial, but is highly desirable, particularly for live-cell imaging. We report, and provide instructions for, the construction of an iSIM, including minor modifications to a previous design in both hardware and software. The final instrument allows us to rapidly acquire fluorescence images at rates faster than 100 fps, with approximately twofold improvement in resolution in both x–y and z; sub-diffractive biological features have an apparent size (full width at half maximum) of 145 nm (lateral) and 320 nm (axial), using a 1.49 NA objective and 488 nm excitation. PMID:26210400

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moldovan, Nicolaie; Divan, Ralu; Zeng, Hongjun

The design and fabrication of Fresnel zone plates for hard x-ray focusing up to 25 keV photon energies with better than 50 nm imaging half-pitch resolution is reported as performed by forming an ultrananocrystalline diamond (UNCD) scaffold, subsequently coating it with atomic layer deposition (ALD) with an absorber/phase shifting material, followed by back side etching of Si to form a diamond membrane device. The scaffold is formed by chemical vapor-deposited UNCD, electron beam lithography, and deep-reactive ion etching of diamond to desired specifications. The benefits of using diamond are as follows: improved mechanical robustness to prevent collapse of high-aspect-ratio ringmore » structures, a known high-aspect-ratio etch method, excellent radiation hardness, extremely low x-ray absorption, and significantly improved thermal/dimensional stability as compared to alternative materials. Central to the technology is the high-resolution patterning of diamond membranes at wafer scale, which was pushed to 60 nm lines and spaces etched 2.2-mu m-deep, to an aspect ratio of 36:1. The absorber growth was achieved by ALD of Ir, Pt, or W, while wafer-level processing allowed to obtain up to 121 device chips per 4 in. wafer with yields better than 60%. X-ray tests with such zone plates allowed resolving 50 nm lines and spaces, at the limit of the available resolution test structures.« less

Simultaneous mapping of pan and sentinel lymph nodes for real-time image-guided surgery.

PubMed

Ashitate, Yoshitomo; Hyun, Hoon; Kim, Soon Hee; Lee, Jeong Heon; Henary, Maged; Frangioni, John V; Choi, Hak Soo

2014-01-01

The resection of regional lymph nodes in the basin of a primary tumor is of paramount importance in surgical oncology. Although sentinel lymph node mapping is now the standard of care in breast cancer and melanoma, over 20% of patients require a completion lymphadenectomy. Yet, there is currently no technology available that can image all lymph nodes in the body in real time, or assess both the sentinel node and all nodes simultaneously. In this study, we report an optical fluorescence technology that is capable of simultaneous mapping of pan lymph nodes (PLNs) and sentinel lymph nodes (SLNs) in the same subject. We developed near-infrared fluorophores, which have fluorescence emission maxima either at 700 nm or at 800 nm. One was injected intravenously for identification of all regional lymph nodes in a basin, and the other was injected locally for identification of the SLN. Using the dual-channel FLARE intraoperative imaging system, we could identify and resect all PLNs and SLNs simultaneously. The technology we describe enables simultaneous, real-time visualization of both PLNs and SLNs in the same subject.

Aberration-Corrected Electron Beam Lithography at the One Nanometer Length Scale

DOE PAGES

Manfrinato, Vitor R.; Stein, Aaron; Zhang, Lihua; ...

2017-04-18

Patterning materials efficiently at the smallest length scales has been a longstanding challenge in nanotechnology. Electron-beam lithography (EBL) is the primary method for patterning arbitrary features, but EBL has not reliably provided sub-4 nm patterns. The few competing techniques that have achieved this resolution are orders of magnitude slower than EBL. In this work, we employed an aberration-corrected scanning transmission electron microscope for lithography to achieve unprecedented resolution. Here we show aberration-corrected EBL at the one nanometer length scale using poly(methyl methacrylate) (PMMA) and have produced both the smallest isolated feature in any conventional resist (1.7 ± 0.5 nm) andmore » the highest density patterns in PMMA (10.7 nm pitch for negative-tone and 17.5 nm pitch for positive-tone PMMA). We also demonstrate pattern transfer from the resist to semiconductor and metallic materials at the sub-5 nm scale. These results indicate that polymer-based nanofabrication can achieve feature sizes comparable to the Kuhn length of PMMA and ten times smaller than its radius of gyration. Use of aberration-corrected EBL will increase the resolution, speed, and complexity in nanomaterial fabrication.« less

Double exposure technique for 45nm node and beyond

NASA Astrophysics Data System (ADS)

Hsu, Stephen; Park, Jungchul; Van Den Broeke, Douglas; Chen, J. Fung

2005-11-01

The technical challenges in using F2 lithography for the 45nm node, along with the insurmountable difficulties in EUV lithography, has driven the semiconductor chipmaker into the low k1 lithography era under the pressure of ever decreasing feature sizes. Extending lithography towards lower k1 puts heavy demand on the resolution enhancement technique (RET), exposure tool, and the need for litho friendly design. Hyper numerical aperture (NA) exposure tools, immersion, and double exposure techniques (DET's) are the promising methods to extend lithography manufacturing to the 45nm node at k1 factors below 0.3. Scattering bars (SB's) have become an integral part of the lithography process as chipmakers move to production at ever lower k1 factors. To achieve better critical dimension (CD) control, polarization is applied to enhance the image contrast in the preferential imaging orientation, which increases the risk of SB printability. The optimum SB width is approximately (0.20 ~ 0.25)*(λ/NA). When the SB width becomes less than the exposure wavelength on the 4X mask, Kirchhoff's scalar theory under predicts the SB intensity. The optical weighting factor of the SB increases (Figure 1b) and the SB's become more susceptible to printing. Meanwhile, under hyper NA conditions, the effectiveness of "subresolution" SB's is significantly diminished. A full-sized scattering bars (FSB) scheme becomes necessary. Double exposure methods, such as using ternary 6% attenuated PSM (attPSM) for DDL, are good imaging solutions that can reach and likely go beyond the 45nm node. Today DDL, using binary chrome masks, is capable of printing 65 nm device patterns. In this work, we investigate the use of DET with 6% attPSM masks to target 45nm node device. The SB scalability and printability issues can be taken cared of by using "mutual trimming", i.e., with the combined energy from the two exposures. In this study, we share our findings of using DET to pattern a 45nm node device design with polarization and immersion. We also explore other double patterning methods which in addition to having two exposures, incorporates double coat/developing/etch processing to break the 0.25 k1 barrier.

Fine-pitched microgratings encoded by interference of UV femtosecond laser pulses.

PubMed

Kamioka, Hayato; Miura, Taisuke; Kawamura, Ken-ichi; Hirano, Masahiro; Hosono, Hideo

2002-01-01

Fine-pitched microgratings are encoded on fused silica surfaces by a two-beam laser interference technique employing UV femtosecond pulses from the third harmonics of a Ti:sapphire laser. A pump and prove method utilizing a laser-induced optical Kerr effect or transient optical absorption change has been developed to achieve the time coincidence of the two pulses. Use of the UV pulses makes it possible to narrow the grating pitches to an opening as small as 290 nm, and the groove width of the gratings is of nanoscale size. The present technique provides a novel opportunity for the fabrication of periodic nanoscale structures in various materials.

Carbon nanotube circuit integration up to sub-20 nm channel lengths.

PubMed

Shulaker, Max Marcel; Van Rethy, Jelle; Wu, Tony F; Liyanage, Luckshitha Suriyasena; Wei, Hai; Li, Zuanyi; Pop, Eric; Gielen, Georges; Wong, H-S Philip; Mitra, Subhasish

2014-04-22

Carbon nanotube (CNT) field-effect transistors (CNFETs) are a promising emerging technology projected to achieve over an order of magnitude improvement in energy-delay product, a metric of performance and energy efficiency, compared to silicon-based circuits. However, due to substantial imperfections inherent with CNTs, the promise of CNFETs has yet to be fully realized. Techniques to overcome these imperfections have yielded promising results, but thus far only at large technology nodes (1 μm device size). Here we demonstrate the first very large scale integration (VLSI)-compatible approach to realizing CNFET digital circuits at highly scaled technology nodes, with devices ranging from 90 nm to sub-20 nm channel lengths. We demonstrate inverters functioning at 1 MHz and a fully integrated CNFET infrared light sensor and interface circuit at 32 nm channel length. This demonstrates the feasibility of realizing more complex CNFET circuits at highly scaled technology nodes.

A Microfluidic Cytometer for Complete Blood Count With a 3.2-Megapixel, 1.1- μm-Pitch Super-Resolution Image Sensor in 65-nm BSI CMOS.

PubMed

Liu, Xu; Huang, Xiwei; Jiang, Yu; Xu, Hang; Guo, Jing; Hou, Han Wei; Yan, Mei; Yu, Hao

2017-08-01

Based on a 3.2-Megapixel 1.1- μm-pitch super-resolution (SR) CMOS image sensor in a 65-nm backside-illumination process, a lens-free microfluidic cytometer for complete blood count (CBC) is demonstrated in this paper. Backside-illumination improves resolution and contrast at the device level with elimination of surface treatment when integrated with microfluidic channels. A single-frame machine-learning-based SR processing is further realized at system level for resolution correction with minimum hardware resources. The demonstrated microfluidic cytometer can detect the platelet cells (< 2 μm) required in CBC, hence is promising for point-of-care diagnostics.

Design optimization of highly asymmetrical layouts by 2D contour metrology

NASA Astrophysics Data System (ADS)

Hu, C. M.; Lo, Fred; Yang, Elvis; Yang, T. H.; Chen, K. C.

2018-03-01

As design pitch shrinks to the resolution limit of up-to-date optical lithography technology, the Critical Dimension (CD) variation tolerance has been dramatically decreased for ensuring the functionality of device. One of critical challenges associates with the narrower CD tolerance for whole chip area is the proximity effect control on asymmetrical layout environments. To fulfill the tight CD control of complex features, the Critical Dimension Scanning Electron Microscope (CD-SEM) based measurement results for qualifying process window and establishing the Optical Proximity Correction (OPC) model become insufficient, thus 2D contour extraction technique [1-5] has been an increasingly important approach for complementing the insufficiencies of traditional CD measurement algorithm. To alleviate the long cycle time and high cost penalties for product verification, manufacturing requirements are better to be well handled at design stage to improve the quality and yield of ICs. In this work, in-house 2D contour extraction platform was established for layout design optimization of 39nm half-pitch Self-Aligned Double Patterning (SADP) process layer. Combining with the adoption of Process Variation Band Index (PVBI), the contour extraction platform enables layout optimization speedup as comparing to traditional methods. The capabilities of identifying and handling lithography hotspots in complex layout environments of 2D contour extraction platform allow process window aware layout optimization to meet the manufacturing requirements.

Designing to win in sub-90nm mask production

NASA Astrophysics Data System (ADS)

Zhang, Yuan

2005-11-01

An informal survey conducted with key customers by Photronics indicates that the time gap between technology nodes has accelerated in recent years. Previously the cycle was three years. However, between 130nm and 90nm there was less than a 2 year gap, and between 90nm and 65nm a 1.5 year gap exists. As a result, the technical challenges have increased substantially. In addition, mask costs are rising exponentially due to high capital equipment cost, a shrinking customer base, long write times and increased applications of 193nm EAPSM or AAPSM. Collaboration among EDA companies, mask houses and wafer manufacturers is now more important than ever. This paper will explore avenues for reducing mask costs, mainly in the areas of: write-time reduction through design for manufacturing (DFM), and yield improvement through specification relaxation. Our study conducted through layout vertex modeling suggests that a simple design shape such as a square versus a circle or an angled structure helps reduce shot count and write time. Shot count reduction through mask layout optimization, and advancement in new generation E-beam writers can reduce write time up to 65%. An advanced laser writer can produce those less critical E-beam layers in less than half the time of an e-beam writer. Additionally, the emerging imprint lithography brings new life and new challenges to the photomask industry with applications in many fields outside of the semiconductor industry. As immersion lithography is introduced for 45nm device production, polarization and MEEF effects due to the mask will become severe. Larger magnification not only provides benefits on CD control and MEEF, but also extends the life time of current 90nm/65nm tool sets where 45nm mask sets can be produced at a lower cost.

Interconnections in ULSI: Correlation and Crosstalk

DTIC Science & Technology

1992-12-31

basic tool is electron beam lithography of poly (methyl methacrylate) (PMMA). The two central issues to creating very dense patterns as described...direct lithographic techniques. Fig. 2: Ti/Au (2 nm/15 nm) grating with 38 nm pitch fabricated by electron beam lithography using our high contrast...G. H. Bernstein, G. Bazan, and D. A. Hill, "Spatial Density of Lines in PMMA by Electron Beam Lithography ," Journal of Vacuum Science and Technology

Tissue distribution and elimination after oral and intravenous administration of different titanium dioxide nanoparticles in rats

PubMed Central

2014-01-01

Objective The aim of this study was to obtain kinetic data that can be used in human risk assessment of titanium dioxide nanomaterials. Methods Tissue distribution and blood kinetics of various titanium dioxide nanoparticles (NM-100, NM-101, NM-102, NM-103, and NM-104), which differ with respect to primary particle size, crystalline form and hydrophobicity, were investigated in rats up to 90 days post-exposure after oral and intravenous administration of a single or five repeated doses. Results For the oral study, liver, spleen and mesenteric lymph nodes were selected as target tissues for titanium (Ti) analysis. Ti-levels in liver and spleen were above the detection limit only in some rats. Titanium could be detected at low levels in mesenteric lymph nodes. These results indicate that some minor absorption occurs in the gastrointestinal tract, but to a very limited extent. Both after single and repeated intravenous (IV) exposure, titanium rapidly distributed from the systemic circulation to all tissues evaluated (i.e. liver, spleen, kidney, lung, heart, brain, thymus, reproductive organs). Liver was identified as the main target tissue, followed by spleen and lung. Total recovery (expressed as % of nominal dose) for all four tested nanomaterials measured 24 h after single or repeated exposure ranged from 64-95% or 59-108% for male or female animals, respectively. During the 90 days post-exposure period, some decrease in Ti-levels was observed (mainly for NM-100 and NM-102) with a maximum relative decrease of 26%. This was also confirmed by the results of the kinetic analysis which revealed that for each of the investigated tissues the half-lifes were considerable (range 28–650 days, depending on the TiO2-particle and tissue investigated). Minor differences in kinetic profile were observed between the various particles, though these could not be clearly related to differences in primary particle size or hydrophobicity. Some indications were observed for an effect of crystalline form (anatase vs. rutile) on total Ti recovery. Conclusion Overall, the results of the present oral and IV study indicates very low oral bioavailability and slow tissue elimination. Limited uptake in combination with slow elimination might result in the long run in potential tissue accumulation. PMID:24993397

Perpendicular Orientation Control without Interfacial Treatment of RAFT-Synthesized High-χ Block Copolymer Thin Films with Sub-10 nm Features Prepared via Thermal Annealing.

PubMed

Nakatani, Ryuichi; Takano, Hiroki; Chandra, Alvin; Yoshimura, Yasunari; Wang, Lei; Suzuki, Yoshinori; Tanaka, Yuki; Maeda, Rina; Kihara, Naoko; Minegishi, Shinya; Miyagi, Ken; Kasahara, Yuusuke; Sato, Hironobu; Seino, Yuriko; Azuma, Tsukasa; Yokoyama, Hideaki; Ober, Christopher K; Hayakawa, Teruaki

2017-09-20

In this study, a series of perpendicular lamellae-forming poly(polyhedral oligomeric silsesquioxane methacrylate-block-2,2,2-trifluoroethyl methacrylate)s (PMAPOSS-b-PTFEMAs) was developed based on the bottom-up concept of creating a simple yet effective material by tailoring the chemical properties and molecular composition of the material. The use of silicon (Si)-containing hybrid high-χ block copolymers (BCPs) provides easy access to sub-10 nm feature sizes. However, as the surface free energies (SFEs) of Si-containing polymers are typically vastly lower than organic polymers, this tends to result in the selective segregation of the inorganic block onto the air interface and increased difficulty in controlling the BCP orientation in thin films. Therefore, by balancing the SFEs between the organic and inorganic blocks through the use of poly(2,2,2-trifluoroethyl methacrylate) (PTFEMA) on the organic block, a polymer with an SFE similar to Si-containing polymers, orientation control of the BCP domains in thin films becomes much simpler. Herein, perpendicularly oriented BCP thin films with a χ eff value of 0.45 were fabricated using simple spin-coating and thermal annealing processes under ambient conditions. The thin films displayed a minimum domain size of L 0 = 11 nm, as observed via atomic force microscopy (AFM), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Furthermore, directed self-assembly (DSA) of the BCP on a topographically prepatterned substrate using the grapho-epitaxy method was used to successfully obtain perpendicularly oriented lamellae with a half pitch size of ca. 8 nm.

Patterned mask inspection technology with Projection Electron Microscope (PEM) technique for 11 nm half-pitch (hp) generation EUV masks

NASA Astrophysics Data System (ADS)

Hirano, Ryoichi; Iida, Susumu; Amano, Tsuyoshi; Watanabe, Hidehiro; Hatakeyama, Masahiro; Murakami, Takeshi; Yoshikawa, Shoji; Suematsu, Kenichi; Terao, Kenji

2015-07-01

High-sensitivity EUV mask pattern defect detection is one of the major issues in order to realize the device fabrication by using the EUV lithography. We have already designed a novel Projection Electron Microscope (PEM) optics that has been integrated into a new inspection system named EBEYE-V30 ("Model EBEYE" is an EBARA's model code), and which seems to be quite promising for 16 nm hp generation EUVL Patterned mask Inspection (PI). Defect inspection sensitivity was evaluated by capturing an electron image generated at the mask by focusing onto an image sensor. The progress of the novel PEM optics performance is not only about making an image sensor with higher resolution but also about doing a better image processing to enhance the defect signal. In this paper, we describe the experimental results of EUV patterned mask inspection using the above-mentioned system. The performance of the system is measured in terms of defect detectability for 11 nm hp generation EUV mask. To improve the inspection throughput for 11 nm hp generation defect detection, it would require a data processing rate of greater than 1.5 Giga- Pixel-Per-Second (GPPS) that would realize less than eight hours of inspection time including the step-and-scan motion associated with the process. The aims of the development program are to attain a higher throughput, and enhance the defect detection sensitivity by using an adequate pixel size with sophisticated image processing resulting in a higher processing rate.

Immersion and dry scanner extensions for sub-10nm production nodes

NASA Astrophysics Data System (ADS)

Weichselbaum, Stefan; Bornebroek, Frank; de Kort, Toine; Droste, Richard; de Graaf, Roelof F.; van Ballegoij, Rob; Botter, Herman; McLaren, Matthew G.; de Boeij, Wim P.

2015-03-01

Progressing towards the 10nm and 7nm imaging node, pattern-placement and layer-to-layer overlay requirements keep on scaling down and drives system improvements in immersion (ArFi) and dry (ArF/KrF) scanners. A series of module enhancements in the NXT platform have been introduced; among others, the scanner is equipped with exposure stages with better dynamics and thermal control. Grid accuracy improvements with respect to calibration, setup, stability, and layout dependency tighten MMO performance and enable mix and match scanner operation. The same platform improvements also benefit focus control. Improvements in detectability and reproducibility of low contrast alignment marks enhance the alignment solution window for 10nm logic processes and beyond. The system's architecture allows dynamic use of high-order scanner optimization based on advanced actuators of projection lens and scanning stages. This enables a holistic optimization approach for the scanner, the mask, and the patterning process. Productivity scanner design modifications esp. stage speeds and optimization in metrology schemes provide lower layer costs for customers using immersion lithography as well as conventional dry technology. Imaging, overlay, focus, and productivity data is presented, that demonstrates 10nm and 7nm node litho-capability for both (immersion & dry) platforms.

Picosecond ultrasonic study of surface acoustic waves on periodically patterned layered nanostructures.

PubMed

Colletta, Michael; Gachuhi, Wanjiru; Gartenstein, Samuel A; James, Molly M; Szwed, Erik A; Daly, Brian C; Cui, Weili; Antonelli, George A

2018-07-01

We have used the ultrafast pump-probe technique known as picosecond ultrasonics to generate and detect surface acoustic waves on a structure consisting of nanoscale Al lines on SiO 2 on Si. We report results from ten samples with varying pitch (1000-140 nm) and SiO 2 film thickness (112 nm or 60 nm), and compare our results to an isotropic elastic calculation and a coarse-grained molecular dynamics simulation. In all cases we are able to detect and identify a Rayleigh-like surface acoustic wave with wavelength equal to the pitch of the lines and frequency in the range of 5-24 GHz. In some samples, we are able to detect additional, higher frequency surface acoustic waves or independent modes of the Al lines with frequencies close to 50 GHz. We also describe the effects of probe beam polarization on the measurement's sensitivity to the different surface modes. Copyright © 2018 Elsevier B.V. All rights reserved.

Clinical significance of nm23 gene expression in gastric cancer.

PubMed

Mönig, Stefan P; Nolden, Brit; Lübke, Thomas; Pohl, Alexandra; Grass, Guido; Schneider, Paul M; Dienes, Hans P; Hölscher, Arnulf H; Baldus, Stephan E

2007-01-01

The expression of the nm23 gene has been associated with the development of metastasis. Numerous studies have shown down-regulation of nm23 expression in metastatic breast and colon cancer. The expression of the putative metastasis-suppressor gene nm23 in gastric carcinoma is controversial. The aim of this study was the analysis of nm23 expression in a large series of gastric cancer patients. In a retrospective immunohistochemical study specimens obtained from 116 gastric cancer patients (mean age 64 years; range: 33-85) who had undergone gastrectomy with extended lymphadenectomy were analyzed. Nm23 expression in the tumor epithelium was studied by immunohistochemistry followed by a semi-quantitative (score 0-3) evaluation. Statistical analysis including Chi-square test, uni- and multivariate survival analyses were performed. The nm23 staining pattern was positive (score 2-3) in 100 (86.2%) specimens and negative (score 0-1) in 16 (13.8%) samples. Lymph node metastasis was found in 65% of the patients. No significant correlations could be determined between nm23 expression and other variables such as gender, age, tumor differentiation, WHO-, Laurén-, Goseki-, or Ming-classification. The intensity of nm23 staining in the tumor cells was not significantly correlated with depth of tumor infiltration (T-stage), lymph node metastasis (N-stage), distant metastasis (M-stage), UICC-stage, or prognosis. Our series did not show a correlation of nm23 expression in terms of lymph node and distant metastasis or prognosis in gastric cancer patients.

Electron-induced single event upsets in 28 nm and 45 nm bulk SRAMs

DOE PAGES

Trippe, J. M.; Reed, R. A.; Austin, R. A.; ...

2015-12-01

In this study, we present experimental evidence of single electron-induced upsets in commercial 28 nm and 45 nm CMOS SRAMs from a monoenergetic electron beam. Upsets were observed in both technology nodes when the SRAM was operated in a low power state. The experimental cross section depends strongly on both bias and technology node feature size, consistent with previous work in which SRAMs were irradiated with low energy muons and protons. Accompanying simulations demonstrate that δ-rays produced by the primary electrons are responsible for the observed upsets. Additional simulations predict the on-orbit event rates for various Earth and Jovian environmentsmore » for a set of sensitive volumes representative of current technology nodes. The electron contribution to the total upset rate for Earth environments is significant for critical charges as high as 0.2 fC. This value is comparable to that of sub-22 nm bulk SRAMs. Similarly, for the Jovian environment, the electron-induced upset rate is larger than the proton-induced upset rate for critical charges as high as 0.3 fC.« less

Measuring of the pitch variation of cholesteric liquid crystals under electric field using wavelength-swept laser

NASA Astrophysics Data System (ADS)

Ko, Myeong Ock; Kim, Sung-Jo; Kim, Jong-Hyun; Jeon, Min Yong

2017-04-01

We measure the pitch variation of cholesteric liquid crystals (CLCs) according to the applied electric field using a wavelength-swept laser. While the electric field is applied to the CLC, the pitch of the CLC is elongated normal to the direction of electric field. Therefore, the reflection band is shifted to the longer wavelength. When the applied electric field to the CLC cell was over 1.52 V/μm, the reflection band was changed to the longer wavelength of about 75.1 nm. We believe that the dynamic behavior of the CLC can be analyzed if a high-speed wavelength-swept laser is used as an optical source.

Efficiency enhancement of a self-propelled pitching profile using non-sinusoidal trajectories

NASA Astrophysics Data System (ADS)

Mekadem, M.; Chihani, E.; Oualli, H.; Hanchi, S.; Bouabdallah, A.; Gad-El-Hak, M.

2017-11-01

A symmetrical profile is subjected to non-sinusoidal pitching motion. The airfoil has a chord length c = 0.006 m and a semi-circular leading edge with a diameter of D = 0.001 m. The extrados and intrados are two straight lines that intersect at a tapered trailing edge, and the pitching pivot point is positioned at the leading edge. The pitching frequency is in the range of 1 <= f <= 190 Hz, while the tangential amplitude of the flapping trailing edge varies from 18% to 114% of the foil cord. To improve the airfoil propulsive performance, two-dimensional numerical simulations are implemented on FLUENT. The Reynolds number based upon the maximum profile thickness D varies in the range of 35 <= Re <= 210 , which matches insect's Reynolds numbers. The foil movement is executed using the dynamic mesh technique and a user defined function (UDF). The adopted mesh has 70,445 nodes with 5,1960 quadrilateral cells. The results are in good agreement with prior experiments, and, compared to sinusoidal oscillations, show that non-sinusoidal flapping trajectories lead to advancing velocity increase of 550%. Additionally, if improved propulsive efficiency is sought, non-sinusoidal flapping lead to better thrust.

A prototype small CdTe gamma camera for radioguided surgery and other imaging applications.

PubMed

Tsuchimochi, Makoto; Sakahara, Harumi; Hayama, Kazuhide; Funaki, Minoru; Ohno, Ryoichi; Shirahata, Takashi; Orskaug, Terje; Maehlum, Gunnar; Yoshioka, Koki; Nygard, Einar

2003-12-01

Gamma probes have been used for sentinel lymph node biopsy in melanoma and breast cancer. However, these probes can provide only radioactivity counts and variable pitch audio output based on the intensity of the detected radioactivity. We have developed a small semiconductor gamma camera (SSGC) that allows visualisation of the size, shape and location of the target tissues. This study is designed to characterise the performance of the SSGC for radioguided surgery of metastatic lesions and for other imaging applications amenable to the smaller format of this prototype imaging system. The detector head had 32 cadmium telluride semiconductor arrays with a total of 1,024 pixels, and with application-specific integrated circuits (ASICs) and a tungsten collimator. The entire assembly was encased in a lead housing measuring 152 mmx166 mmx65 mm. The effective visual field was 44.8 mmx44.8 mm. The energy resolution and imaging aspects were tested. Two spherical 5-mm- and 15-mm-diameter technetium-99m radioactive sources that had activities of 0.15 MBq and 100 MBq, respectively, were used to simulate a sentinel lymph node and an injection site. The relative detectability of these foci by the new detector and a conventional scintillation camera was studied. The prototype was also examined in a variety of clinical applications. Energy resolution [full-width at half-maximum (FWHM)] for a single element at the centre of the field of view was 4.2% at 140 keV (99mTc), and the mean energy resolution of the CdTe detector arrays was approximately 7.8%. The spatial resolution, represented by FWHM, had a mean value of 1.56 +/- 0.05 mm. Simulated node foci could be visualised clearly by the SSGC using a 15-s acquisition time. In preliminary clinical tests, the SSGC successfully imaged diseases in a variety of tissues, including salivary and thyroid glands, temporomandibular joints and sentinel lymph nodes. The SSGC has significant potential for diagnosing diseases and facilitating subsequent radioguided surgery.

Scanning electron microscope measurement of width and shape of 10nm patterned lines using a JMONSEL-modeled library.

PubMed

Villarrubia, J S; Vladár, A E; Ming, B; Kline, R J; Sunday, D F; Chawla, J S; List, S

2015-07-01

The width and shape of 10nm to 12 nm wide lithographically patterned SiO2 lines were measured in the scanning electron microscope by fitting the measured intensity vs. position to a physics-based model in which the lines' widths and shapes are parameters. The approximately 32 nm pitch sample was patterned at Intel using a state-of-the-art pitch quartering process. Their narrow widths and asymmetrical shapes are representative of near-future generation transistor gates. These pose a challenge: the narrowness because electrons landing near one edge may scatter out of the other, so that the intensity profile at each edge becomes width-dependent, and the asymmetry because the shape requires more parameters to describe and measure. Modeling was performed by JMONSEL (Java Monte Carlo Simulation of Secondary Electrons), which produces a predicted yield vs. position for a given sample shape and composition. The simulator produces a library of predicted profiles for varying sample geometry. Shape parameter values are adjusted until interpolation of the library with those values best matches the measured image. Profiles thereby determined agreed with those determined by transmission electron microscopy and critical dimension small-angle x-ray scattering to better than 1 nm. Published by Elsevier B.V.

Implementation of Unsteady Double-Axis of Rotation Motion to Predict Pitch-Damping Moment

DTIC Science & Technology

2016-10-18

2014;51(5). 4. Dupuis A. Aeroballistic range and wind tunnel tests of the basic finner reference projectile from subsonic to high supersonic velocities... modelled . Typically, when computing aerodynamic coefficients, motion about each axis is considered individually (i.e., spin around body-axis, pitch about...has a diameter, , of 0.03 m (1 caliber) and consists of a 10° half- angle cone that is 2.84-calibers long, followed by a 7.16-caliber cylindrical

Self-aligned quadruple patterning using spacer on spacer integration optimization for N5

NASA Astrophysics Data System (ADS)

Thibaut, Sophie; Raley, Angélique; Mohanty, Nihar; Kal, Subhadeep; Liu, Eric; Ko, Akiteru; O'Meara, David; Tapily, Kandabara; Biolsi, Peter

2017-04-01

To meet scaling requirements, the semiconductor industry has extended 193nm immersion lithography beyond its minimum pitch limitation using multiple patterning schemes such as self-aligned double patterning, self-aligned quadruple patterning and litho-etch / litho etch iterations. Those techniques have been declined in numerous options in the last few years. Spacer on spacer pitch splitting integration has been proven to show multiple advantages compared to conventional pitch splitting approach. Reducing the number of pattern transfer steps associated with sacrificial layers resulted in significant decrease of cost and an overall simplification of the double pitch split technique. While demonstrating attractive aspects, SAQP spacer on spacer flow brings challenges of its own. Namely, material set selections and etch chemistry development for adequate selectivities, mandrel shape and spacer shape engineering to improve edge placement error (EPE). In this paper we follow up and extend upon our previous learning and proceed into more details on the robustness of the integration in regards to final pattern transfer and full wafer critical dimension uniformity. Furthermore, since the number of intermediate steps is reduced, one will expect improved uniformity and pitch walking control. This assertion will be verified through a thorough pitch walking analysis.

High-Throughput Mechanobiology Screening Platform Using Micro- and Nanotopography.

PubMed

Hu, Junqiang; Gondarenko, Alexander A; Dang, Alex P; Bashour, Keenan T; O'Connor, Roddy S; Lee, Sunwoo; Liapis, Anastasia; Ghassemi, Saba; Milone, Michael C; Sheetz, Michael P; Dustin, Michael L; Kam, Lance C; Hone, James C

2016-04-13

We herein demonstrate the first 96-well plate platform to screen effects of micro- and nanotopographies on cell growth and proliferation. Existing high-throughput platforms test a limited number of factors and are not fully compatible with multiple types of testing and assays. This platform is compatible with high-throughput liquid handling, high-resolution imaging, and all multiwell plate-based instrumentation. We use the platform to screen for topographies and drug-topography combinations that have short- and long-term effects on T cell activation and proliferation. We coated nanofabricated "trench-grid" surfaces with anti-CD3 and anti-CD28 antibodies to activate T cells and assayed for interleukin 2 (IL-2) cytokine production. IL-2 secretion was enhanced at 200 nm trench width and >2.3 μm grating pitch; however, the secretion was suppressed at 100 nm width and <0.5 μm pitch. The enhancement on 200 nm grid trench was further amplified with the addition of blebbistatin to reduce contractility. The 200 nm grid pattern was found to triple the number of T cells in long-term expansion, a result with direct clinical applicability in adoptive immunotherapy.

Line-edge roughness performance targets for EUV lithography

NASA Astrophysics Data System (ADS)

Brunner, Timothy A.; Chen, Xuemei; Gabor, Allen; Higgins, Craig; Sun, Lei; Mack, Chris A.

2017-03-01

Our paper will use stochastic simulations to explore how EUV pattern roughness can cause device failure through rare events, so-called "black swans". We examine the impact of stochastic noise on the yield of simple wiring patterns with 36nm pitch, corresponding to 7nm node logic, using a local Critical Dimension (CD)-based fail criteria Contact hole failures are examined in a similar way. For our nominal EUV process, local CD uniformity variation and local Pattern Placement Error variation was observed, but no pattern failures were seen in the modest (few thousand) number of features simulated. We degraded the image quality by incorporating Moving Standard Deviation (MSD) blurring to degrade the Image Log-Slope (ILS), and were able to find conditions where pattern failures were observed. We determined the Line Width Roughness (LWR) value as a function of the ILS. By use of an artificial "step function" image degraded by various MSD blur, we were able to extend the LWR vs ILS curve into regimes that might be available for future EUV imagery. As we decreased the image quality, we observed LWR grow and also began to see pattern failures. For high image quality, we saw CD distributions that were symmetrical and close to Gaussian in shape. Lower image quality caused CD distributions that were asymmetric, with "fat tails" on the low CD side (under-exposed) which were associated with pattern failures. Similar non-Gaussian CD distributions were associated with image conditions that caused missing contact holes, i.e. CD=0.

Elastic scattering spectroscopy findings in formalin-fixed oral squamous cell carcinoma specimens

NASA Astrophysics Data System (ADS)

Swinson, B.; Elmaaytah, M.; Jerjes, W.; Hopper, C.

2005-11-01

Oral squamous cell carcinoma (OSCC) has been shown to spread locally and infiltrate adjacent bone or via the lymphatic system to the cervical lymph nodes. This usually necessitates a surgical neck dissection and either a local or segmental resection for bone clearance. While histopathology remains the gold standard for tissue diagnosis, several new diagnostic techniques are being developed that rely on physical and biochemical changes that mirror or precede malignant changes within tissue. The aim of this study was to compare findings of Elastic Scattering Spectroscopy (ESS) with histopathology on formalin-fixed specimens of both neck lymph node dissections and de-calcified archival bone from patients with OSCC. We wished to see if this technique could be used as an adjunct or alternative to histopathology in defining cervical nodal involvement and if it could be used to identify bone resection margins positive for tumour. 130 lymph nodes were examined from 13 patients. The nodes were formalin-fixed, bivalved and examined by ESS. The intensity of the spectrum at 4 points was considered for comparison; at 360nm, 450nm, 630nm and 690nm. 341 spectra were taken from the mandibular specimens of 21 patients, of which 231 spectra were taken from histologically positive sites and the rest were normal. The nodes and bone specimens were then routinely processed with haematoxylin and eosin-stained sections, examined histopathologically, and the results compared. Using Linear Discriminant Analysis (LDA) as a statistical method, a sensitivity of 98% and a specificity of 68% was obtained for the neck nodes and a sensitivity of 87% and a specificity of 80% for the bone margins.

Study on dissolution behavior of polymer-bound and polymer-blended photo-acid generator (PAG) resists

NASA Astrophysics Data System (ADS)

Yamamoto, Hiroki; Kozawa, Takahiro; Tagawa, Seiichi

2013-03-01

The requirements for the next generation resist materials are so challenging that it is indispensable for feasibility of EUV lithography to grasp basic chemistry of resist matrices in all stage of resist processes. Under such circumstances, it is very important to know dissolution characteristics of the resist film into alkaline developer though the dissolution of exposed area of resist films in alkaline developer to form a pattern is a complex reactive process. In this study, the influence of EUV and KrF exposure on the dissolution behavior of polymer bound PAG and polymer blended PAG was studied in detail using quartz crystal microbalance (QCM) methods. The difference in swelling formation between KrF and EUV exposure was observed. It is likely that difference of reaction mechanism induces the difference of these swelling. Also, it is observed that the swelling of polymer-bound PAG is less than that of polymer blended PAG in both KrF and EUV exposure. This result indicates that polymer-bound PAG suppresses swelling very well and showed an excellent performance. Actually, the developed polymer bound-PAG resist showed an excellent performance (half pitch 50 nm line and space pattern). Thus, polymer bound PAG is one of the promising candidate for 16 nm EUV resist.

Advanced applications of scatterometry based optical metrology

NASA Astrophysics Data System (ADS)

Dixit, Dhairya; Keller, Nick; Kagalwala, Taher; Recchia, Fiona; Lifshitz, Yevgeny; Elia, Alexander; Todi, Vinit; Fronheiser, Jody; Vaid, Alok

2017-03-01

The semiconductor industry continues to drive patterning solutions that enable devices with higher memory storage capacity, faster computing performance, and lower cost per transistor. These developments in the field of semiconductor manufacturing along with the overall minimization of the size of transistors require continuous development of metrology tools used for characterization of these complex 3D device architectures. Optical scatterometry or optical critical dimension (OCD) is one of the most prevalent inline metrology techniques in semiconductor manufacturing because it is a quick, precise and non-destructive metrology technique. However, at present OCD is predominantly used to measure the feature dimensions such as line-width, height, side-wall angle, etc. of the patterned nano structures. Use of optical scatterometry for characterizing defects such as pitch-walking, overlay, line edge roughness, etc. is fairly limited. Inspection of process induced abnormalities is a fundamental part of process yield improvement. It provides process engineers with important information about process errors, and consequently helps optimize materials and process parameters. Scatterometry is an averaging technique and extending it to measure the position of local process induced defectivity and feature-to-feature variation is extremely challenging. This report is an overview of applications and benefits of using optical scatterometry for characterizing defects such as pitch-walking, overlay and fin bending for advanced technology nodes beyond 7nm. Currently, the optical scatterometry is based on conventional spectroscopic ellipsometry and spectroscopic reflectometry measurements, but generalized ellipsometry or Mueller matrix spectroscopic ellipsometry data provides important, additional information about complex structures that exhibit anisotropy and depolarization effects. In addition the symmetry-antisymmetry properties associated with Mueller matrix (MM) elements provide an excellent means of measuring asymmetry present in the structure. The useful additional information as well as symmetry-antisymmetry properties of MM elements is used to characterize fin bending, overlay defects and design improvements in the OCD test structures are used to boost OCDs' sensitivity to pitch-walking. In addition, the validity of the OCD based results is established by comparing the results to the top down critical dimensionscanning electron microscope (CD-SEM) and cross-sectional transmission electron microscope (TEM) images.

Ion/Ioff ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO2

NASA Astrophysics Data System (ADS)

Jang, Kyungmin; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro

2017-10-01

We have investigated the energy efficiency and scalability of ferroelectric HfO2 (FE:HfO2)-based negative-capacitance field-effect-transistor (NCFET) with gate-all-around (GAA) nanowire (NW) channel structure. Analytic simulation is conducted to characterize NW-NCFET by varying NW diameter and/or thickness of gate insulator as device structural parameters. Due to the negative-capacitance effect and GAA NW channel structure, NW-NCFET is found to have 5× higher Ion/Ioff ratio than classical NW-MOSFET and 2× higher than double-gate (DG) NCFET, which results in wider design window for high Ion/Ioff ratio. To analyze these obtained results from the viewpoint of the device scalability, we have considered constraints regarding very limited device structural spaces to fit by the gate insulator and NW channel for aggresively scaled gate length (Lg) and/or very tight NW pitch. NW-NCFET still has design point with very thinned gate insulator and/or narrowed NW. Therefore, FE:HfO2-based NW-NCFET is applicable to the aggressively scaled technology node of sub-10 nm Lg and to the very tight NW integration of sub-30 nm NW pitch for beyond 7 nm technology. From 2011 to 2014, he engaged in developing high-speed optical transceiver module as an alternative military service in Republic of Korea. His research interest includes the development of steep slope MOSFETs for high energy-efficient operation and ferroelectric HfO2-based semiconductor devices, and fabrication of nanostructured devices. He joined the IBM T.J. Watson Research Center, Yorktown Heights, NY, in 2010, where he worked on advanced CMOS technologies such as FinFET, nanowire FET, SiGe channel and III-V channel. He was also engaged in launching 14 nm SOI FinFET and RMG technology development. Since 2014, he has been an Associate Professor in Institute of Industrial Science, University of Tokyo, Tokyo, Japan, where he has been working on ultralow power transistor and memory technology. Dr. Kobayashi is a member of IEEE and the Japan Society of Applied Physics. Dr. Hiramoto is a fellow of Japan Society of Applied Physics and a member of IEEE and IEICE. He served as the General Chair of Silicon Nanoelectronics Workshop in 2003 and the Program Chair in 1997, 1999, and 2001. He was on Committee of IEDM from 2003 to 2009. He was the Program Chair of Symposium on VLSI Technology in 2013 and was the General Chair in 2015. He is the Program Chair of International Conference on Solid-State Devices and Materials (SSDM) in 2016.

28nm node process optimization: a lithography centric view

NASA Astrophysics Data System (ADS)

Seltmann, Rolf

2014-10-01

Many experts claim that the 28nm technology node will be the most cost effective technology node forever. This results from primarily from the cost of manufacturing due to the fact that 28nm is the last true Single Patterning (SP) node. It is also affected by the dramatic increase of design costs and the limited shrink factor of the next following nodes. Thus, it is assumed that this technology still will be alive still for many years. To be cost competitive, high yields are mandatory. Meanwhile, leading edge foundries have optimized the yield of the 28nm node to such a level that that it is nearly exclusively defined by random defectivity. However, it was a long way to go to come to that level. In my talk I will concentrate on the contribution of lithography to this yield learning curve. I will choose a critical metal patterning application. I will show what was needed to optimize the process window to a level beyond the usual OPC model work that was common on previous nodes. Reducing the process (in particular focus) variability is a complementary need. It will be shown which improvements were needed in tooling, process control and design-mask-wafer interaction to remove all systematic yield detractors. Over the last couple of years new scanner platforms were introduced that were targeted for both better productivity and better parametric performance. But this was not a clear run-path. It needed some extra affords of the tool suppliers together with the Fab to bring the tool variability down to the necessary level. Another important topic to reduce variability is the interaction of wafer none-planarity and lithography optimization. Having an accurate knowledge of within die topography is essential for optimum patterning. By completing both the variability reduction work and the process window enhancement work we were able to transfer the original marginal process budget to a robust positive budget and thus ensuring high yield and low costs.

Design strategy for integrating DSA via patterning in sub-7 nm interconnects

NASA Astrophysics Data System (ADS)

Karageorgos, Ioannis; Ryckaert, Julien; Tung, Maryann C.; Wong, H.-S. P.; Gronheid, Roel; Bekaert, Joost; Karageorgos, Evangelos; Croes, Kris; Vandenberghe, Geert; Stucchi, Michele; Dehaene, Wim

2016-03-01

In recent years, major advancements have been made in the directed self-assembly (DSA) of block copolymers (BCPs). As a result, the insertion of DSA for IC fabrication is being actively considered for the sub-7nm nodes. At these nodes the DSA technology could alleviate costs for multiple patterning and limit the number of litho masks that would be required per metal layer. One of the most straightforward approaches for DSA implementation would be for via patterning through templated DSA, where hole patterns are readily accessible through templated confinement of cylindrical phase BCP materials. Our in-house studies show that decomposition of via layers in realistic circuits below the 7nm node would require at least many multi-patterning steps (or colors), using 193nm immersion lithography. Even the use of EUV might require double patterning in these dimensions, since the minimum via distance would be smaller than EUV resolution. The grouping of vias through templated DSA can resolve local conflicts in high density areas. This way, the number of required colors can be significantly reduced. For the implementation of this approach, a DSA-aware mask decomposition is required. In this paper, our design approach for DSA via patterning in sub-7nm nodes is discussed. We propose options to expand the list of DSA-compatible via patterns (DSA letters) and we define matching cost formulas for the optimal DSA-aware layout decomposition. The flowchart of our proposed approach tool is presented.

Low track height standard cell design in iN7 using scaling boosters

NASA Astrophysics Data System (ADS)

Sherazi, S. M. Y.; Jha, C.; Rodopoulos, D.; Debacker, P.; Chava, B.; Matti, L.; Bardon, M. G.; Schuddinck, P.; Raghavan, P.; Gerousis, V.; Spessot, A.; Verkest, D.; Mocuta, A.; Kim, R. H.; Ryckaert, J.

2017-04-01

In this paper, standard cell design for iN7 CMOS platform technology targeting the tightest contacted poly pitch (CPP) of 42 nm and a metal pitch of 32 nm in the FinFET technology is presented. Three standard cell architectures for iN7, a 7.5-Track library, 6.5-Track library, and 6-Track library have been designed. Scaling boosters are introduced for the libraries progressively: first an extra MOL layer to enable an efficient layout of the three libraries starting with 7.5-Track library; second, fully self aligned gate contact is introduced for 6.5 and 6-Track library and third, 6-Track cell design includes a buried rail track for supply. The 6-Track cells are on average 5% and 45% smaller than the 6.5 and 7.5-Track cells, respectively.

Chiral lyotropic chromonic liquid crystals composed of disodium cromoglycate doped with water-soluble chiral additives.

PubMed

Shirai, Tatsuya; Shuai, Min; Nakamura, Keita; Yamaguchi, Akihiro; Naka, Yumiko; Sasaki, Takeo; Clark, Noel A; Le, Khoa V

2018-02-28

We investigated the pitches of cholesteric liquid crystals prepared by mixing disodium cromoglycate (DSCG) in water with 5 different water-soluble chiral additives. The measurements are based on the Grandjean-Cano wedge cell method. Overall, the twisting effect is weak, and the shortest pitch of 2.9 ± 0.2 μm is obtained using trans-4-hydroxy-l-proline, by which the cholesteric sample is iridescent at certain viewing angles. Freeze-fracture transmission electron microscopy (FFTEM) was also performed for the first time on both the nematic and cholesteric phases, revealing that stacked chromonic aggregates are very long, up to a few hundred nm, which explains why cholesteric chromonic liquid crystals hardly have pitches in the visible wavelength region.

A new capacitive long-range displacement nanometer sensor with differential sensing structure based on time-grating

NASA Astrophysics Data System (ADS)

Yu, Zhicheng; Peng, Kai; Liu, Xiaokang; Pu, Hongji; Chen, Ziran

2018-05-01

High-precision displacement sensors, which can measure large displacements with nanometer resolution, are key components in many ultra-precision fabrication machines. In this paper, a new capacitive nanometer displacement sensor with differential sensing structure is proposed for long-range linear displacement measurements based on an approach denoted time grating. Analytical models established using electric field coupling theory and an area integral method indicate that common-mode interference will result in a first-harmonic error in the measurement results. To reduce the common-mode interference, the proposed sensor design employs a differential sensing structure, which adopts a second group of induction electrodes spatially separated from the first group of induction electrodes by a half-pitch length. Experimental results based on a prototype sensor demonstrate that the measurement accuracy and the stability of the sensor are substantially improved after adopting the differential sensing structure. Finally, a prototype sensor achieves a measurement accuracy of  ±200 nm over the full 200 mm measurement range of the sensor.

Shot noise limit of chemically amplified resists with photodecomposable quenchers used for extreme ultraviolet lithography

NASA Astrophysics Data System (ADS)

Kozawa, Takahiro; Santillan, Julius Joseph; Itani, Toshiro

2017-06-01

In lithography using high-energy photons such as an extreme ultraviolet (EUV) radiation, the shot noise of photons is a critical issue. The shot noise is a cause of line edge/width roughness (LER/LWR) and stochastic defect generation and limits the resist performance. In this study, the effects of photodecomposable quenchers were investigated from the viewpoint of the shot noise limit. The latent images of line-and-space patterns with 11 nm half-pitch were calculated using a Monte Carlo method. In the simulation, the effect of secondary electron blur was eliminated to clarify the shot noise limits regarding stochastic phenomena such as LER. The shot noise limit for chemically amplified resists with acid generators and photodecomposable quenchers was approximately the same as that for chemically amplified resists with acid generators and conventional quenchers when the total sensitizer concentration was the same. The effect of photodecomposable quenchers on the shot noise limit was essentially the same as that of acid generators.

The study on the effect of pattern density distribution on the STI CMP process

NASA Astrophysics Data System (ADS)

Sub, Yoon Myung; Hian, Bernard Yap Tzen; Fong, Lee It; Anak, Philip Menit; Minhar, Ariffin Bin; Wui, Tan Kim; Kim, Melvin Phua Twang; Jin, Looi Hui; Min, Foo Thai

2017-08-01

The effects of pattern density on CMP characteristics were investigated using specially designed wafer for the characterization of pattern-dependencies in STI CMP [1]. The purpose of this study is to investigate the planarization behavior based on a direct STI CMP used in cerium (CeO2) based slurry system in terms of pattern density variation. The minimal design rule (DR) of 180nm generation technology node was adopted for the mask layout. The mask was successfully applied for evaluation of a cerium (CeO2) abrasive based direct STI CMP process. In this study, we described a planarization behavior of the loading-effects of pattern density variation which were characterized with layout pattern density and pitch variations using masks mentioned above. Furthermore, the characterizing pattern dependent on the variations of the dimensions and spacing features, in thickness remaining after CMP, were analyzed and evaluated. The goal was to establish a concept of library method which will be used to generate design rules reducing the probability of CMP-related failures. Details of the characterization were measured in various layouts showing different pattern density ranges and the effects of pattern density on STI CMP has been discussed in this paper.

Design technology co-optimization for 14/10nm metal1 double patterning layer

NASA Astrophysics Data System (ADS)

Duan, Yingli; Su, Xiaojing; Chen, Ying; Su, Yajuan; Shao, Feng; Zhang, Recco; Lei, Junjiang; Wei, Yayi

2016-03-01

Design and technology co-optimization (DTCO) can satisfy the needs of the design, generate robust design rule, and avoid unfriendly patterns at the early stage of design to ensure a high level of manufacturability of the product by the technical capability of the present process. The DTCO methodology in this paper includes design rule translation, layout analysis, model validation, hotspots classification and design rule optimization mainly. The correlation of the DTCO and double patterning (DPT) can optimize the related design rule and generate friendlier layout which meets the requirement of the 14/10nm technology node. The experiment demonstrates the methodology of DPT-compliant DTCO which is applied to a metal1 layer from the 14/10nm node. The DTCO workflow proposed in our job is an efficient solution for optimizing the design rules for 14/10 nm tech node Metal1 layer. And the paper also discussed and did the verification about how to tune the design rule of the U-shape and L-shape structures in a DPT-aware metal layer.

Mechanical end joint system for structural column elements

NASA Technical Reports Server (NTRS)

Bush, H. G.; Wallsom, R. E. (Inventor)

1982-01-01

A mechanical end joint system, useful for the transverse connection of strut elements to a common node, comprises a node joint half with a semicircular tongue and groove, and a strut joint half with a semicircular tongue and groove. The two joint halves are engaged transversely and the connection is made secure by the inherent physical property characteristics of locking latches and/or by a spring-actioned shaft. A quick release mechanism provides rapid disengagement of the joint halves.

Ultra compact spectrometer apparatus and method using photonic crystals

NASA Technical Reports Server (NTRS)

Ting, David Z. (Inventor); Hill, Cory J. (Inventor); Bandara, Sumith V. (Inventor); Gunapala, Sarath D. (Inventor)

2009-01-01

The present invention is directed to methods of photonic crystal formation, and to methods and apparatus for using such photonic crystals, particularly in conjunction with detector arrays. Photonic crystal parameters and detector array parameters are compared to optimize the selection and orientation of a photonic crystal shape. A photonic crystal is operatively positioned relative to a plurality of light sensors. The light sensors can be separated by a pitch distance and positioned within one half of the pitch distance of an exit surface of the photonic crystals.

Mapping Sequence performed during the STS-135 R-Bar Pitch Maneuver

NASA Image and Video Library

2011-07-10

ISS028-E-015593 (10 July 2011) --- This is one of a series of images showing various parts of the space shuttle Atlantis in Earth orbit as photographed by one of three crew members -- half the station crew -- who were equipped with still cameras for this purpose on the International Space Station as the shuttle “posed” for photos and visual surveys and performed a back-flip for the rendezvous pitch maneuver (RPM). A 1000 millimeter lens was used to capture this particular series of images.

Mapping Sequence performed during the STS-135 R-Bar Pitch Maneuver  

NASA Image and Video Library

2011-07-10

ISS028-E-015396 (10 July 2011) --- This is one of a series of images showing various parts of the space shuttle Atlantis in Earth orbit as photographed by one of three crewmembers – half the International Space Station crew – who were equipped with still cameras for this purpose on t station as the shuttle “posed” for photos and visual surveys and performed a back-flip for the rendezvous pitch maneuver (RPM). An 800 millimeter lens was used to capture this particular series of images.

Mapping Sequence performed during the STS-135 R-Bar Pitch Maneuver

NASA Image and Video Library

2011-07-10

ISS028-E-015600 (10 July 2011) --- This is one of a series of images showing various parts of the space shuttle Atlantis in Earth orbit as photographed by one of three crew members -- half the station crew -- who were equipped with still cameras for this purpose on the International Space Station as the shuttle “posed” for photos and visual surveys and performed a back-flip for the rendezvous pitch maneuver (RPM). A 1000 millimeter lens was used to capture this particular series of images.

Mapping Sequence performed during the STS-135 R-Bar Pitch Maneuver

NASA Image and Video Library

2011-07-10

ISS028-E-015662 (10 July 2011) --- This is one of a series of images showing various parts of the space shuttle Atlantis in Earth orbit as photographed by one of three crew members -- half the station crew -- who were equipped with still cameras for this purpose on the International Space Station as the shuttle “posed” for photos and visual surveys and performed a back-flip for the rendezvous pitch maneuver (RPM). A 1000 millimeter lens was used to capture this particular series of images.

Mapping Sequence performed during the STS-135 R-Bar Pitch Maneuver

NASA Image and Video Library

2011-07-10

ISS028-E-015668 (10 July 2011) --- This is one of a series of images showing various parts of the space shuttle Atlantis in Earth orbit as photographed by one of three crew members -- half the station crew -- who were equipped with still cameras for this purpose on the International Space Station as the shuttle “posed” for photos and visual surveys and performed a back-flip for the rendezvous pitch maneuver (RPM). A 1000 millimeter lens was used to capture this particular series of images.

Superconducting flat tape cable magnet

DOEpatents

Takayasu, Makoto

2015-08-11

A method for winding a coil magnet with the stacked tape cables, and a coil so wound. The winding process is controlled and various shape coils can be wound by twisting about the longitudinal axis of the cable and bending following the easy bend direction during winding, so that sharp local bending can be obtained by adjusting the twist pitch. Stack-tape cable is twisted while being wound, instead of being twisted in a straight configuration and then wound. In certain embodiments, the straight length should be half of the cable twist-pitch or a multiple of it.

Coma measurement by use of an alternating phase-shifting mask mark with a specific phase width

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qiu Zicheng; Wang Xiangzhao; Yuan Qiongyan

2009-01-10

The correlation between the coma sensitivity of the alternating phase-shifting mask (Alt-PSM) mark and the mark's structure is studied based on the Hopkins theory of partially coherent imaging and positive resist optical lithography (PROLITH) simulation. It is found that an optimized Alt-PSM mark with its phase width being two-thirds its pitch has a higher sensitivity to coma than Alt-PSM marks with the same pitch and the different phase widths. The pitch of the Alt-PSM mark is also optimized by PROLITH simulation, and the structure of p=1.92{lambda}/NA and pw=2p/3 proves to be with the highest sensitivity. The optimized Alt-PSM mark ismore » used as a measurement mark to retrieve coma aberration from the projection optics in lithographic tools. In comparison with an ordinary Alt-PSM mark with its phase width being a half its pitch, the measurement accuracies of Z7 and Z14 apparently increase.« less

Nanoscale arrays of antimony telluride single crystals by selective chemical vapor deposition

PubMed Central

Huang, Ruomeng; Benjamin, Sophie L.; Gurnani, Chitra; Wang, Yudong; Hector, Andrew L.; Levason, William; Reid, Gillian; De Groot, C. H. (Kees)

2016-01-01

Arrays of individual single nanocrystals of Sb2Te3 have been formed using selective chemical vapor deposition (CVD) from a single source precursor. Crystals are self-assembled reproducibly in confined spaces of 100 nm diameter with pitch down to 500 nm. The distribution of crystallite sizes across the arrays is very narrow (standard deviation of 15%) and is affected by both the hole diameter and the array pitch. The preferred growth of the crystals in the <1 1 0> orientation along the diagonal of the square holes strongly indicates that the diffusion of adatoms results in a near thermodynamic equilibrium growth mechanism of the nuclei. A clear relationship between electrical resistivity and selectivity is established across a range of metal selenides and tellurides, showing that conductive materials result in more selective growth and suggesting that electron donation is of critical importance for selective deposition. PMID:27283116

The verification of printability about marginal defects and the detectability at the inspection tool in sub 50nm node

NASA Astrophysics Data System (ADS)

Lee, Hyemi; Jeong, Goomin; Seo, Kangjun; Kim, Sangchul; kim, changreol

2008-05-01

Since mask design rule is smaller and smaller, Defects become one of the issues dropping the mask yield. Furthermore controlled defect size become smaller while masks are manufactured. According to ITRS roadmap on 2007, controlled defect size is 46nm in 57nm node and 36nm in 45nm node on a mask. However the machine development is delayed in contrast with the speed of the photolithography development. Generally mask manufacturing process is divided into 3 parts. First part is patterning on a mask and second part is inspecting the pattern and repairing the defect on the mask. At that time, inspection tools of transmitted light type are normally used and are the most trustful as progressive type in the developed inspection tools until now. Final part is shipping the mask after the qualifying the issue points and weak points. Issue points on a mask are qualified by using the AIMS (Aerial image measurement system). But this system is including the inherent error possibility, which is AIMS measures the issue points based on the inspection results. It means defects printed on a wafer are over the specific size detected by inspection tools and the inspection tool detects the almost defects. Even though there are no tools to detect the 46nm and 36nm defects suggested by ITRS roadmap, this assumption is applied to manufacturing the 57nm and 45nm device. So we make the programmed defect mask consisted with various defect type such as spot, clear extension, dark extension and CD variation on L/S(line and space), C/H(contact hole) and Active pattern in 55nm and 45nm node. And the programmed defect mask was inspected by using the inspection tool of transmitted light type and was measured by using AIMS 45-193i. Then the marginal defects were compared between the inspection tool and AIMS. Accordingly we could verify whether defect size is proper or not, which was suggested to be controlled on a mask by ITRS roadmap. Also this result could suggest appropriate inspection tools for next generation device among the inspection tools of transmitted light type, reflected light type and aerial image type.

Large Diameter Shuttle Launched-AEM (LDSL-AEM) study

NASA Technical Reports Server (NTRS)

1976-01-01

A technical description of a Large Diameter Shuttle Launched-AEM (LDSL-AEM), an AEM base module adapted to carry 5 ft diameter payloads in the shuttle with propulsion for carrying payloads to higher altitude orbits from a 150 NM shuttle orbit, is described. The AEM is designed for launch on the scout launch vehicle. Onboard equipment provides capability to despin, acquire the earth, and control the vehicle in an earth pointing mode using reaction wheels for torque with magnets for all attitude acquisition, wheel desaturation, and nutation damping. Earth sensors in the wheels provide pitch and roll attitude. This system provides autonomous control capability to 1 degree in pitch and roll and 2 degrees in yaw. The attitude can be determined to .5 degrees in pitch and roll and 2 degrees in yaw.

N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties

NASA Astrophysics Data System (ADS)

Bergbauer, W.; Strassburg, M.; Kölper, Ch.; Linder, N.; Roder, C.; Lähnemann, J.; Trampert, A.; Fündling, S.; Li, S. F.; Wehmann, H.-H.; Waag, A.

2011-01-01

We demonstrate the morphological properties of height, diameter and shape controlled N-face GaN nanorods (NRs) by adjusting conventional growth parameters of a standard metalorganic vapour phase epitaxy (MOVPE) growth process. Particularly the hydrogen fraction within the carrier gas was shown to be an important shaping tool for the grown nanostructures. Additionally, the aspect ratio of the NRs was successfully tuned by increasing the pitch of the nanoimprint lithography (NIL) pattern, while maintaining the hole-diameter constant. An optimum aspect ratio could be found at pitches between 400 and 800 nm, whereas larger pitches are counter-productive. The major conclusion drawn from our experiments is that the whole amount of growth material available over the masked surface contributes to the growth of the NRs.

Via patterning in the 7-nm node using immersion lithography and graphoepitaxy directed self-assembly

NASA Astrophysics Data System (ADS)

Doise, Jan; Bekaert, Joost; Chan, Boon Teik; Hori, Masafumi; Gronheid, Roel

2017-04-01

Insertion of a graphoepitaxy directed self-assembly process as a via patterning technology into integrated circuit fabrication is seriously considered for the 7-nm node and beyond. At these dimensions, a graphoepitaxy process using a cylindrical block copolymer that enables hole multiplication can alleviate costs by extending 193-nm immersion-based lithography and significantly reducing the number of masks that would be required per layer. To be considered for implementation, it needs to be proved that this approach can achieve the required pattern quality in terms of defects and variability using a representative, aperiodic design. The patterning of a via layer from an actual 7-nm node logic layout is demonstrated using immersion lithography and graphoepitaxy directed self-assembly in a fab-like environment. The performance of the process is characterized in detail on a full 300-mm wafer scale. The local variability in an edge placement error of the obtained patterns (4.0 nm 3σ for singlets) is in line with the recent results in the field and significantly less than of the prepattern (4.9 nm 3σ for singlets). In addition, it is expected that pattern quality can be further improved through an improved mask design and optical proximity correction. No major complications for insertion of the graphoepitaxy directed self-assembly into device manufacturing were observed.

The broadcast classical-quantum capacity region of a two-phase bidirectional relaying channel

NASA Astrophysics Data System (ADS)

Boche, Holger; Cai, Minglai; Deppe, Christian

2015-10-01

We studied a three-node quantum network that enables bidirectional communication between two nodes with a half-duplex relay node for transmitting classical messages. A decode-and-forward protocol is used to perform the communication in two phases. In the first phase, the messages of two nodes are transmitted to the relay node. The capacity of the first phase is well known by previous works. In the second phase, the relay node broadcasts a re-encoded composition to the two nodes. We determine the capacity region of the broadcast phase. To the best of our knowledge, this is the first paper analyzing quantum bidirectional relay networks.

High-Density Near-Field Readout Using Solid Immersion Lens Made of KTaO3 Monocrystal

NASA Astrophysics Data System (ADS)

Shinoda, Masataka; Saito, Kimihiro; Kondo, Takao; Furuki, Motohiro; Takeda, Minoru; Nakaoki, Ariyoshi; Sasaura, Masahiro; Fujiura, Kazuo

2006-02-01

We developed solid immersion lenses made of a KTaO3 monocrystal. The refractive index of KTaO3 is 2.382 at a wavelength of 405 nm. Using KTaO3 as the raw material of a solid immersion lens, we could design an effective numerical aperture of 2.20. We observed an eye pattern of a 150 GB capacity with a 130 nm track pitch and a 47.6 nm bit length. The areal density is 104.3 Gbit/in.2.

L10 FePtCu bit patterned media

NASA Astrophysics Data System (ADS)

Brombacher, C.; Grobis, M.; Lee, J.; Fidler, J.; Eriksson, T.; Werner, T.; Hellwig, O.; Albrecht, M.

2012-01-01

Chemically ordered 5 nm-thick L10 FePtCu films with strong perpendicular magnetic anisotropy were post-patterned by nanoimprint lithography into a dot array over a 3 mm-wide circumferential band on a 3 inch Si wafer. The dots with a diameter of 30 nm and a center-to-center pitch of 60 nm appear as single domain and reveal an enhanced switching field as compared to the continuous film. We demonstrate successful recording on a single track using shingled writing with a conventional hard disk drive write/read head.

Audio-visual interactions uniquely contribute to resolution of visual conflict in people possessing absolute pitch.

PubMed

Kim, Sujin; Blake, Randolph; Lee, Minyoung; Kim, Chai-Youn

2017-01-01

Individuals possessing absolute pitch (AP) are able to identify a given musical tone or to reproduce it without reference to another tone. The present study sought to learn whether this exceptional auditory ability impacts visual perception under stimulus conditions that provoke visual competition in the form of binocular rivalry. Nineteen adult participants with 3-19 years of musical training were divided into two groups according to their performance on a task involving identification of the specific note associated with hearing a given musical pitch. During test trials lasting just over half a minute, participants dichoptically viewed a scrolling musical score presented to one eye and a drifting sinusoidal grating presented to the other eye; throughout the trial they pressed buttons to track the alternations in visual awareness produced by these dissimilar monocular stimuli. On "pitch-congruent" trials, participants heard an auditory melody that was congruent in pitch with the visual score, on "pitch-incongruent" trials they heard a transposed auditory melody that was congruent with the score in melody but not in pitch, and on "melody-incongruent" trials they heard an auditory melody completely different from the visual score. For both groups, the visual musical scores predominated over the gratings when the auditory melody was congruent compared to when it was incongruent. Moreover, the AP participants experienced greater predominance of the visual score when it was accompanied by the pitch-congruent melody compared to the same melody transposed in pitch; for non-AP musicians, pitch-congruent and pitch-incongruent trials yielded equivalent predominance. Analysis of individual durations of dominance revealed differential effects on dominance and suppression durations for AP and non-AP participants. These results reveal that AP is accompanied by a robust form of bisensory interaction between tonal frequencies and musical notation that boosts the salience of a visual score.

Audio-visual interactions uniquely contribute to resolution of visual conflict in people possessing absolute pitch

PubMed Central

Kim, Sujin; Blake, Randolph; Lee, Minyoung; Kim, Chai-Youn

2017-01-01

Individuals possessing absolute pitch (AP) are able to identify a given musical tone or to reproduce it without reference to another tone. The present study sought to learn whether this exceptional auditory ability impacts visual perception under stimulus conditions that provoke visual competition in the form of binocular rivalry. Nineteen adult participants with 3–19 years of musical training were divided into two groups according to their performance on a task involving identification of the specific note associated with hearing a given musical pitch. During test trials lasting just over half a minute, participants dichoptically viewed a scrolling musical score presented to one eye and a drifting sinusoidal grating presented to the other eye; throughout the trial they pressed buttons to track the alternations in visual awareness produced by these dissimilar monocular stimuli. On “pitch-congruent” trials, participants heard an auditory melody that was congruent in pitch with the visual score, on “pitch-incongruent” trials they heard a transposed auditory melody that was congruent with the score in melody but not in pitch, and on “melody-incongruent” trials they heard an auditory melody completely different from the visual score. For both groups, the visual musical scores predominated over the gratings when the auditory melody was congruent compared to when it was incongruent. Moreover, the AP participants experienced greater predominance of the visual score when it was accompanied by the pitch-congruent melody compared to the same melody transposed in pitch; for non-AP musicians, pitch-congruent and pitch-incongruent trials yielded equivalent predominance. Analysis of individual durations of dominance revealed differential effects on dominance and suppression durations for AP and non-AP participants. These results reveal that AP is accompanied by a robust form of bisensory interaction between tonal frequencies and musical notation that boosts the salience of a visual score. PMID:28380058

A dual-modal magnetic nanoparticle probe for preoperative and intraoperative mapping of sentinel lymph nodes by magnetic resonance and near infrared fluorescence imaging

PubMed Central

Zhou, Zhengyang; Chen, Hongwei; Lipowska, Malgorzata; Wang, Liya; Yu, Qiqi; Yang, Xiaofeng; Tiwari, Diana; Yang, Lily; Mao, Hui

2016-01-01

The ability to reliably detect sentinel lymph nodes for sentinel lymph node biopsy and lymphadenectomy is important in clinical management of patients with metastatic cancers. However, the traditional sentinel lymph node mapping with visible dyes is limited by the penetration depth of light and fast clearance of the dyes. On the other hand, sentinel lymph node mapping with radionucleotide technique has intrinsically low spatial resolution and does not provide anatomic details in the sentinel lymph node mapping procedure. This work reports the development of a dual modality imaging probe with magnetic resonance and near infrared imaging capabilities for sentinel lymph node mapping using magnetic iron oxide nanoparticles (10 nm core size) conjugated with a near infrared molecule with emission at 830 nm. Accumulation of magnetic iron oxide nanoparticles in sentinel lymph nodes leads to strong T2 weighted magnetic resonance imaging contrast that can be potentially used for preoperative localization of sentinel lymph nodes, while conjugated near infrared molecules provide optical imaging tracking of lymph nodes with a high signal to background ratio. The new magnetic nanoparticle based dual imaging probe exhibits a significant longer lymph node retention time. Near infrared signals from nanoparticle conjugated near infrared dyes last up to 60 min in sentinel lymph node compared to that of 25 min for the free near infrared dyes in a mouse model. Furthermore, axillary lymph nodes, in addition to sentinel lymph nodes, can be also visualized with this probe, given its slow clearance and sufficient sensitivity. Therefore, this new dual modality imaging probe with the tissue penetration and sensitive detection of sentinel lymph nodes can be applied for preoperative survey of lymph nodes with magnetic resonance imaging and allows intraoperative sentinel lymph node mapping using near infrared optical devices. PMID:23812946

Perpendicular STT_RAM cell in 8 nm technology node using Co1/Ni3(1 1 1)||Gr2||Co1/Ni3(1 1 1) structure as magnetic tunnel junction

NASA Astrophysics Data System (ADS)

Varghani, Ali; Peiravi, Ali; Moradi, Farshad

2018-04-01

The perpendicular anisotropy Spin-Transfer Torque Random Access Memory (P-STT-RAM) is considered to be a promising candidate for high-density memories. Many distinct advantages of Perpendicular Magnetic Tunnel Junction (P-MTJ) compared to the conventional in-plane MTJ (I-MTJ) such as lower switching current, circular cell shape that facilitates manufacturability in smaller technology nodes, large thermal stability, smaller cell size, and lower dipole field interaction between adjacent cells make it a promising candidate as a universal memory. However, for small MTJ cell sizes, the perpendicular technology requires new materials with high polarization and low damping factor as well as low resistance area product of a P-MTJ in order to avoid a high write voltage as technology is scaled down. A new graphene-based STT-RAM cell for 8 nm technology node that uses high perpendicular magnetic anisotropy cobalt/nickel (Co/Ni) multilayer as magnetic layers is proposed in this paper. The proposed junction benefits from enough Tunneling Magnetoresistance Ratio (TMR), low resistance area product, low write voltage, and low power consumption that make it suitable for 8 nm technology node.

Advanced Technology for Ultra-Low Power System-on-Chip (SoC)

DTIC Science & Technology

2017-06-01

design at IDS=1mA/μm compared with that in experimental 14nm-node FinFET. The redistributed electric field along the channel length direction can... design can result in more uniform electron density and electron velocity distributions compared to a homojunction device. This uniform electron... design at IDS=1mA/μm compared with that in experimental 14nm-node FinFET. 14 Approved for public release, distribution is unlimited. 0 5 10 15 20

Integrated scatterometry for tight overlay and CD control to enable 20-nm node wafer manufacturing.

NASA Astrophysics Data System (ADS)

Benschop, Jos; Engelen, Andre; Cramer, Hugo; Kubis, Michael; Hinnen, Paul; van der Laan, Hans; Bhattacharyya, Kaustuve; Mulkens, Jan

2013-04-01

The overlay, CDU and focus requirements for the 20nm node can only be met using a holistic lithography approach whereby full use is made of high-order, field-by-field, scanner correction capabilities. An essential element in this approach is a fast, precise and accurate in-line metrology sensor, capable to measure on product. The capabilities of the metrology sensor as well as the impact on overlay, CD and focus will be shared in this paper.

Wide-Band Spatially Tunable Photonic Bandgap in Visible Spectral Range and Laser based on a Polymer Stabilized Blue Phase

PubMed Central

Lin, Jia-De; Wang, Tsai-Yen; Mo, Ting-Shan; Huang, Shuan-Yu; Lee, Chia-Rong

2016-01-01

This work successfully develops a largely-gradient-pitched polymer-stabilized blue phase (PSBP) photonic bandgap (PBG) device with a wide-band spatial tunability in nearly entire visible region within a wide blue phase (BP) temperature range including room temperature. The device is fabricated based on the reverse diffusion of two injected BP-monomer mixtures with a low and a high chiral concentrations and afterwards through UV-curing. This gradient-pitched PSBP can show a rainbow-like reflection appearance in which the peak wavelength of the PBG can be spatially tuned from the blue to the red regions at room temperature. The total tuning spectral range for the cell is as broad as 165 nm and covers almost the entire visible region. Based on the gradient-pitched PSBP, a spatially tunable laser is also demonstrated in this work. The temperature sensitivity of the lasing wavelength for the laser is negatively linear and approximately −0.26 nm/°C. The two devices have a great potential for use in applications of photonic devices and displays because of their multiple advantages, such as wide-band tunability, wide operated temperature range, high stability and reliability, no issue of hysteresis, no need of external controlling sources, and not slow tuning speed (mechanically). PMID:27456475

Finding the right way: DFM versus area efficiency for 65 nm gate layer lithography

NASA Astrophysics Data System (ADS)

Sarma, Chandra S.; Scheer, Steven; Herold, Klaus; Fonseca, Carlos; Thomas, Alan; Schroeder, Uwe P.

2006-03-01

DFM (Design for Manufacturing) has become a buzzword for lithography since the 90nm node. Implementing DFM intelligently can boost yield rates and reliability in semiconductor manufacturing significantly. However, any restriction on the design space will always result in an area loss, thus diminishing the effective shrink factor for a given technology. For a lithographer, the key task is to develop a manufacturable process, while not sacrificing too much area. We have developed a high performing lithography process for attenuated gate level lithography that is based on aggressive illumination and a newly optimized SRAF placement schemes. In this paper we present our methodology and results for this optimization, using an anchored simulation model. The wafer results largely confirm the predictions of the simulations. The use of aggressive SRAF (Sub Resolution Assist Features) strategy leads to reduction of forbidden pitch regions without any SRAF printing. The data show that our OPC is capable of correcting the PC tip to tip distance without bridging between the tips in dense SRAM cells. SRAF strategy for various 2D cases has also been verified on wafer. We have shown that aggressive illumination schemes yielding a high performing lithography process can be employed without sacrificing area. By carefully choosing processing conditions, we were able develop a process that has very little restrictions for design. In our approach, the remaining issues can be addressed by DFM, partly in data prep procedures, which are largely area neutral and transparent to the designers. Hence, we have shown successfully, that DFM and effective technology shrinks are not mutually exclusive.

Temperature-tunable lasing in negative dielectric chiral nematic liquid crystal

NASA Astrophysics Data System (ADS)

Wu, Ri-Na; Wu, Jie; Wu, Xiao-Jiao; Dai, Qin

2015-05-01

In this work, negative dielectric nematic liquid crystal SLC12V620-400, chiral dopant S811, and laser dye DCM are used to prepare dye-doped chiral nematic liquid crystal laser sample. In order to investigate temperature-tunable lasing in negative dielectric chiral nematic liquid crystal, we measure the transmission and lasing spectrum of this sample. The photonic band gap (PBG) is observed to red shift with its width reducing from 71.2 nm to 40.2 nm, and its short-wavelength band edge moves 55.3 nm while the long-wavelength band edge only moves 24.9 nm. The wavelength of output laser is found to red shift from 614.4 nm at 20 °C to 662.8 nm at 67 °C, which is very different from the previous experimental phenomena. The refractive indices, parallel and perpendicular to the director in chiral nematic liquid crystal have different dependencies on temperature. The experiment shows that the pitch of this chiral nematic liquid crystal increases with the increase of temperature. The decrease in the PBG width, different shifts of band edges, and the red shift of laser wavelength are the results of refractive indices change and pitch thermal elongation. Project supported by the National Natural Science Foundation of China (Grant No. 61378042), the Outstanding Young Scholars Growth Plans of Colleges and Universities in Liaoning Province, China (Grant No. LJQ2013022), the Science and Technology Research of Liaoning Province, China (Grant No. L2010465), the Open Funds of Liaoning Province Key Laboratory of Laser and Optical Information of Shenyang Ligong University, China.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trippe, J. M.; Reed, R. A.; Austin, R. A.

In this study, we present experimental evidence of single electron-induced upsets in commercial 28 nm and 45 nm CMOS SRAMs from a monoenergetic electron beam. Upsets were observed in both technology nodes when the SRAM was operated in a low power state. The experimental cross section depends strongly on both bias and technology node feature size, consistent with previous work in which SRAMs were irradiated with low energy muons and protons. Accompanying simulations demonstrate that δ-rays produced by the primary electrons are responsible for the observed upsets. Additional simulations predict the on-orbit event rates for various Earth and Jovian environmentsmore » for a set of sensitive volumes representative of current technology nodes. The electron contribution to the total upset rate for Earth environments is significant for critical charges as high as 0.2 fC. This value is comparable to that of sub-22 nm bulk SRAMs. Similarly, for the Jovian environment, the electron-induced upset rate is larger than the proton-induced upset rate for critical charges as high as 0.3 fC.« less

Ultimate patterning limits for EUV at 5nm node and beyond

NASA Astrophysics Data System (ADS)

Ali, Rehab Kotb; Hamed Fatehy, Ahmed; Lafferty, Neal; Word, James

2018-03-01

The 5nm technology node introduces more aggressive geometries than previous nodes. In this paper, we are introducing a comprehensive study to examine the pattering limits of EUV at 0.33NA. The study is divided into two main approaches: (A) Exploring pattering limits of Single Exposure EUV Cut/Block mask in Self-Aligned-Multi-Patterning (SAMP) process, and (B) Exploring the pattering limits of a Single Exposure EUV printing of metal Layers. The printability of the resulted OPC masks is checked through a model based manufacturing flow for the two pattering approaches. The final manufactured patterns are quantified by Edge Placement Error (EPE), Process Variation Band (PVBand), soft/hard bridging and pinching, Image Log Slope (ILS) and Common Depth of Focus (CDOF)

Nanohole and dot patterning processes on quartz substrate by R-θ electron beam lithography and nanoimprinting

NASA Astrophysics Data System (ADS)

Watanabe, Tsuyoshi; Taniguchi, Kazutake; Suzuki, Kouta; Iyama, Hiromasa; Kishimoto, Shuji; Sato, Takashi; Kobayashi, Hideo

2016-06-01

Fine hole and dot patterns with bit pitches (bp’s) of less than 40 nm were fabricated in the circular band area of a quartz substrate by R-θ electron beam lithography (EBL), reactive ion etching (RIE), and nanoimprinting. These patterning processes were studied to obtain minimum pitch sizes of hole and dot patterns without pattern collapse. The patterning on the circular band was aimed to apply these patterning processes to future high-density bit-patterned media (BPM) for hard disk drive (HDD) and permanent memory for the long life archiving of digital data. In hole patterning, a minimum-22-nm-bp and 8.2-nm-diameter pattern (1.3 Tbit/in.2) was obtained on a quartz substrate by optimizing the R-θ EBL and RIE processes. Dot patterns were replicated on another quartz substrate by nanoimprinting using a hole-patterned quartz substrate as a master mold followed by RIE. In dot patterning, a minimum-30-nm-bp and 18.5-nm-diameter pattern (0.7 Tbit/in.2) was obtained by introducing new descum conditions. It was observed that the minimum bp of successful patterning increased as the fabrication process proceeded, i.e., from 20 nm bp in the first EBL process to 30 nm bp in the last quartz dot patterning process. From the measured diameters of the patterns, it was revealed that pattern collapse was apt to occur when the value of average diameter plus 3 sigma of diameter was close to the bp. It was suggested that multiple fabrication processes caused the degradation of pattern quality; therefore, hole patterning is more suitable than dot patterning for future applications owing to the lower quality degradation by its simple fabrication process.

Size-dependent lymphatic uptake of nanoscale-tailored particles as tumor mass increases.

PubMed

Kjellman, Pontus; Fredriksson, Sarah; Kjellman, Christian; Strand, Sven-Erik; Zandt, René In 't

2015-11-01

To investigate the size-dependent lymphatic uptake of nanoparticles in mice with rapidly growing syngeneic tumors. Mice were inoculated subcutaneously with EL4 lymphoma cells and on day 5 or day 6 of tumor growth, injected peritumorally with either 29 nm or 58 nm of ultra-small superparamagnetic iron oxide nanoparticles. Twenty-four hours later the animals were imaged using MRI. The larger of the two particles can only be detected in the lymph node when injected in animals with 6-day-old tumors while the 29 nm ultra-small superparamagnetic iron oxide nanoparticle is observed on both time points. Tumor mass greatly impacts the size of particles that are transported to the lymph nodes.

Low-energy electron beam proximity projection lithography (LEEPL): the world's first e-beam production tool, LEEPL 3000

NASA Astrophysics Data System (ADS)

Behringer, Uwe F. W.

2004-06-01

In June 2000 ago the company Accretech and LEEPL corporation decided to develop an E-beam lithography tool for high throughput wafer exposure, called LEEPL. In an amazing short time the alpha tool was built. In 2002 the beta tool was installed at Accretech. Today the first production tool the LEEPL 3000 is ready to be shipped. The 2keV E-beam tool will be used in the first lithography strategy to expose (in mix and match mode with optical exposure tools) critical levels like gate structures, contact holes (CH), and via pattern of the 90 nm and 65 nm node. At the SEMATECH EPL workshop on September 22nd in Cambridge, England it was mentioned that the amount of these levels will increase very rapidly (8 in 2007; 13 in 2010 and 17 in 2013). The schedule of the production tool for 45 nm node is mid 2005 and for the 32 nm node 2008. The Figure 1 shows from left to right α-tool, the β-tool and the production tool LEEPL 3000. Figure 1 also shows the timetable of the 4 LEEPL forum all held in Japan.

Progress and process improvements for multiple electron-beam direct write

NASA Astrophysics Data System (ADS)

Servin, Isabelle; Pourteau, Marie-Line; Pradelles, Jonathan; Essomba, Philippe; Lattard, Ludovic; Brandt, Pieter; Wieland, Marco

2017-06-01

Massively parallel electron beam direct write (MP-EBDW) lithography is a cost-effective patterning solution, complementary to optical lithography, for a variety of applications ranging from 200 to 14 nm. This paper will present last process/integration results to achieve targets for both 28 and 45 nm nodes. For 28 nm node, we mainly focus on line-width roughness (LWR) mitigation by playing with stack, new resist platform and bias design strategy. The lines roughness was reduced by using thicker spin-on-carbon (SOC) hardmask (-14%) or non-chemically amplified (non-CAR) resist with bias writing strategy implementation (-20%). Etch transfer into trilayer has been demonstrated by preserving pattern fidelity and profiles for both CAR and non-CAR resists. For 45 nm node, we demonstrate the electron-beam process integration within optical CMOS flows. Resists based on KrF platform show a full compatibility with multiple stacks to fit with conventional optical flow used for critical layers. Electron-beam resist performances have been optimized to fit the specifications in terms of resolution, energy latitude, LWR and stack compatibility. The patterning process overview showing the latest achievements is mature enough to enable starting the multi-beam technology pre-production mode.

Integration of e-beam direct write in BEOL processes of 28nm SRAM technology node using mix and match

NASA Astrophysics Data System (ADS)

Gutsch, Manuela; Choi, Kang-Hoon; Hanisch, Norbert; Hohle, Christoph; Seidel, Robert; Steidel, Katja; Thrun, Xaver; Werner, Thomas

2014-10-01

Many efforts were spent in the development of EUV technologies, but from a customer point of view EUV is still behind expectations. In parallel since years maskless lithography is included in the ITRS roadmap wherein multi electron beam direct patterning is considered as an alternative or complementary approach for patterning of advanced technology nodes. The process of multi beam exposures can be emulated by single beam technologies available in the field. While variable shape-beam direct writers are already used for niche applications, the integration capability of e-beam direct write at advanced nodes has not been proven, yet. In this study the e-beam lithography was implemented in the BEoL processes of the 28nm SRAM technology. Integrated 300mm wafers with a 28nm back-end of line (BEoL) stack from GLOBALFOUNDRIES, Dresden, were used for the experiments. For the patterning of the Metal layer a Mix and Match concept based on the sequence litho - etch - litho - etch (LELE) was developed and evaluated wherein several exposure fields were blanked out during the optical exposure. E-beam patterning results of BEoL Metal and Via layers are presented using a 50kV VISTEC SB3050DW variable shaped electron beam direct writer at Fraunhofer IPMS-CNT. Etch results are shown and compared to the POR. In summary we demonstrate the integration capability of EBDW into a productive CMOS process flow at the example of the 28nm SRAM technology node.

Optimized Plane Wave Imaging for Fast and High-Quality Ultrasound Imaging.

PubMed

Jensen, Jonas; Stuart, Matthias Bo; Jensen, Jorgen Arendt

2016-11-01

This paper presents a method for optimizing parameters affecting the image quality in plane wave imaging. More specifically, the number of emissions and steering angles is optimized to attain the best images with the highest frame rate possible. The method is applied to a specific problem, where image quality for a λ -pitch transducer is compared with a λ /2-pitch transducer. Grating lobe artifacts for λ -pitch transducers degrade the contrast in plane wave images, and the impact on frame rate is studied. Field II simulations of plane wave images are made for all combinations of the parameters, and the optimal setup is selected based on Pareto optimality. The optimal setup for a simulated 4.1-MHz λ -pitch transducer uses 61 emissions and a maximum steering angle of 20° for depths from 0 to 60 mm. The achieved lateral full-width at half-maximum (FWHM) is 1.5λ and the contrast is -29 dB for a scatterer at 9 mm ( 24λ ). Using a λ /2-pitch transducer and only 21 emissions within the same angle range, the image quality is improved in terms of contrast, which is -37 dB. For imaging in regions deeper than 25 mm ( 66λ ), only 21 emissions are optimal for both the transducers, resulting in a -36 dB contrast at 34 mm ( 90λ ). Measurements are performed using the experimental SARUS scanner connected to a λ -pitch and λ /2-pitch transducer. A wire phantom and a tissue mimicking phantom containing anechoic cysts are scanned and show the performance using the optimized sequences for the transducers. FWHM is 1.6λ and contrast is -25 dB for a wire at 9 mm using the λ -pitch transducer. For the λ /2-pitch transducer, contrast is -29 dB. In vivo scans of the carotid artery of a healthy volunteer show improved contrast and present fewer artifacts, when using the λ /2-pitch transducer compared with the λ -pitch. It is demonstrated with a frame rate, which is three times higher for the λ /2-pitch transducer.

Channel length scaling behavior in transistors based on individual versus dense arrays of carbon nanotubes

NASA Astrophysics Data System (ADS)

Brady, Gerald J.; Jinkins, Katherine R.; Arnold, Michael S.

2017-09-01

Recent advances in the solution-phase sorting and assembly of semiconducting single-walled carbon nanotubes (SWCNTs) have enabled significant gains in the performance of field-effect transistors (FETs) constructed from dense arrays of aligned SWCNTs. However, the channel length (LCH) downscaling behaviors of these arrays, which contain some organizational disorder (i.e., rotational misalignment and non-uniform pitch), have not yet been studied in detail below LCH of 100 nm. This study compares the behaviors of individualized SWCNTs with arrays of aligned, solution-cast SWCNTs in FETs with LCH ranging from 30 to 240 nm. The on-state conductance of both individual and array SWCNTs rises with decreasing LCH. Nearly ballistic transport is observed for LCH < 40 nm in both cases, reaching a conductance of 0.82 Go per SWCNT in arrays, where Go = 2e2/h is the quantum conductance. In the off-state, the off-current and subthreshold swing of the individual SWCNTs remain nearly invariant with decreasing LCH whereas array SWCNT FETs suffer from increasing off-state current and deteriorating subthreshold swing for LCH below 100 nm. We analyze array disorder using atomic force microscopy, which shows that crossing SWCNTs that arise from misoriented alignment raise SWCNTs off of the substrate for large portions of the channel when LCH is small. Electrostatics modeling analysis indicates that these raised SWCNTs are a likely contributor to the deteriorating off-current and subthreshold characteristics of arrays. These results demonstrate that improved inter-SWCNT pitch uniformity and alignment with minimal inter-SWCNT interactions will be necessary in order for solution processed SWCNT arrays to reach subthreshold performance on par with isolated SWCNTs. These results are also promising because they show that arrays of solution-processed SWCNTs can nearly reach ballistic conductance in the on-state despite imperfections in pitch and alignment.

Tungsten erosion by unipolar arcing in DIII-D

NASA Astrophysics Data System (ADS)

Bykov, I.; Chrobak, C. P.; Abrams, T.; Rudakov, D. L.; Unterberg, E. A.; Wampler, W. R.; Hollmann, E. M.; Moyer, R. A.; Boedo, J. A.; Stahl, B.; Hinson, E. T.; Yu, J. H.; Lasnier, C. J.; Makowski, M.; McLean, A. G.

2017-12-01

Unipolar arcing was an important mechanism of metal surface erosion during the recently conducted Metal Rings Campaign in DIII-D when two toroidally continuous tile rings with 5 cm wide W-coated TZM inserts were installed in graphite tiles in the lower divertor, one on the floor and one on the shelf. Most of the arc damage occurred on the shelf ring. The total amount of W removed by arcing from the affected ˜4% of the shelf ring area was estimated ˜0.8 × 1021 at., about half of the total amount of W eroded and redeposited outside the inserts (1.8 ± 0.9)×1021 at. The rings were exposed for a total of ˜480 discharges, an equivalent of plasma time on W surfaces (with {{I}}{{p}}> 0.5 MA) ˜103 s. Arcing was monitored in situ with WI (400.9 nm) filtered camera and photomultipliers and showed that: (i) arcing only occurred during ELMs and disruptions, (ii) arcing rate was much lower on the floor than on the shelf ring, and (iii) arcing had a low cut off power flux density about 2 MW m-2. About half of arc tracks had large {10}\\circ pitch angle and probably were produced during disruptions. Such tracks were only found on the shelf. Moderate toroidal variation of the arc track density and W erosion with nearly n = 1 pattern has been measured.

Mapping Sequence performed during the STS-135 R-Bar Pitch Maneuver

NASA Image and Video Library

2011-07-10

ISS028-E-015588 (10 July 2011) --- This picture of Atlantis' main and subsystem engines is one of a series of images showing various parts of the space shuttle Atlantis in Earth orbit as photographed by one of three crew members -- half the station crew -- who were equipped with still cameras for this purpose on the International Space Station as the shuttle “posed” for photos and visual surveys and performed a back-flip for the rendezvous pitch maneuver (RPM). A 1000 millimeter lens was used to capture this particular series of images.

Mapping Sequence performed during the STS-135 R-Bar Pitch Maneuver

NASA Image and Video Library

2011-07-10

ISS028-E-015671 (10 July 2011) --- This head-on picture of Atlantis' nose and part of the underside's thermal protective system tiles is one of a series of images showing various parts of the shuttle in Earth orbit as photographed by one of three crew members -- half the station crew -- who were equipped with still cameras for this purpose on the International Space Station as the shuttle “posed” for photos and visual surveys and performed a back-flip for the rendezvous pitch maneuver (RPM). A 1000 millimeter lens was used to capture this particular series of images.

Defect reduction for semiconductor memory applications using jet and flash imprint lithography

NASA Astrophysics Data System (ADS)

Ye, Zhengmao; Luo, Kang; Lu, Xiaoming; Fletcher, Brian; Liu, Weijun; Xu, Frank; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2012-07-01

Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the defect specifications of high-end memory devices. Defects occurring during imprinting can generally be broken into two categories; random defects and repeating defects. Examples of random defects include fluid phase imprint defects, such as bubbles, and solid phase imprint defects, such as line collapse. Examples of repeater defects include mask fabrication defects and particle induced defects. Previous studies indicated that soft particles cause nonrepeating defects. Hard particles, on the other hand, can cause either permanent resist plugging or mask damage. In a previous study, two specific defect types were examined; random nonfill defects occurring during the resist filling process and repeater defects caused by interactions with particles on the substrate. We attempted to identify the different types of imprint defect types using a mask with line/space patterns at dimensions as small as 26 nm. An Imprio 500 twenty-wafer per hour development tool was used to study the various defect types. The imprint defect density was reduced nearly four orders of magnitude, down to ˜4/cm2 in a period of two years following the availability of low defect imprint masks at 26-nm half-pitch. This reduction was achieved by identifying the root cause of various defects and then taking the appropriate corrective action.

Development and demonstration of a water-window soft x-ray microscope using a Z-pinching capillary discharge source

NASA Astrophysics Data System (ADS)

Nawaz, M. F.; Jancarek, Alexandr; Nevrkla, Michal; Duda, Martin Jakub; Pina, Ladislav

2017-05-01

The development and demonstration of a soft X-ray (SXR) microscope, based on a Z-pinching capillary discharge source has been realized. The Z-pinching plasma acts as a source of SXR radiation. A ceramic capacitor bank is pulsed charged up to 80 kV, and discharged through a pre- ionized nitrogen filled ceramic capillary. The discharge current has an amplitude of 25 kA. Working within the water-window spectral region (λ = 2.88 nm), corresponding to the 1s2-1s2p quantum transition of helium-like nitrogen (N5+), the microscope has a potential in exploiting the natural contrast existing between the K-absorption edges of carbon and oxygen as the main constituents of biological materials, and hence imaging them with high spatial resolution. The SXR microscope uses the grazing incidence ellipsoidal condenser mirror for the illumination, and the Fresnel zone plate optics for the imaging of samples onto a BI-CCD camera. The half- pitch spatial resolution of 100 nm [1] was achieved, as demonstrated by the knife-edge test. In order to enhance the photon-flux at the sample plane, a new scheme for focusing the radiation, from multiple capillary sources has been investigated. Details about the source, and the construction of the microscope are presented and discussed.

Software-based data path for raster-scanned multi-beam mask lithography

NASA Astrophysics Data System (ADS)

Rajagopalan, Archana; Agarwal, Ankita; Buck, Peter; Geller, Paul; Hamaker, H. Christopher; Rao, Nagswara

2016-10-01

According to the 2013 SEMATECH Mask Industry Survey,i roughly half of all photomasks are produced using laser mask pattern generator ("LMPG") lithography. LMPG lithography can be used for all layers at mature technology nodes, and for many non-critical and semi-critical masks at advanced nodes. The extensive use of multi-patterning at the 14-nm node significantly increases the number of critical mask layers, and the transition in wafer lithography from positive tone resist to negative tone resist at the 14-nm design node enables the switch from advanced binary masks back to attenuated phase shifting masks that require second level writes to remove unwanted chrome. LMPG lithography is typically used for second level writes due to its high productivity, absence of charging effects, and versatile non-actinic alignment capability. As multi-patterning use expands from double to triple patterning and beyond, the number of LMPG second level writes increases correspondingly. The desire to reserve the limited capacity of advanced electron beam writers for use when essential is another factor driving the demand for LMPG capacity. The increasing demand for cost-effective productivity has kept most of the laser mask writers ever manufactured running in production, sometimes long past their projected lifespan, and new writers continue to be built based on hardware developed some years ago.ii The data path is a case in point. While state-ofthe- art when first introduced, hardware-based data path systems are difficult to modify or add new features to meet the changing requirements of the market. As data volumes increase, design styles change, and new uses are found for laser writers, it is useful to consider a replacement for this critical subsystem. The availability of low-cost, high-performance, distributed computer systems combined with highly scalable EDA software lends itself well to creating an advanced data path system. EDA software, in routine production today, scales well to hundreds or even thousands of CPU-cores, offering the potential for virtually unlimited capacity. Features available in EDA software such as sizing, scaling, tone reversal, OPC, MPC, rasterization, and others are easily adapted to the requirements of a data path system. This paper presents the motivation, requirements, design and performance of an advanced, scalable software data path system suitable to support multi-beam laser mask lithography.

Sensorimotor Mismapping in Poor-pitch Singing.

PubMed

He, Hao; Zhang, Wei-Dong

2017-09-01

This study proposes that there are two types of sensorimotor mismapping in poor-pitch singing: erroneous mapping and no mapping. We created operational definitions for the two types of mismapping based on the precision of pitch-matching and predicted that in the two types of mismapping, phonation differs in terms of accuracy and the dependence on the articulation consistency between the target and the intended vocal action. The study aimed to test this hypothesis by examining the reliability and criterion-related validity of the operational definitions. A within-subject design was used in this study. Thirty-two participants identified as poor-pitch singers were instructed to vocally imitate pure tones and to imitate their own vocal recordings with the same articulation as self-targets and with different articulation from self-targets. Definitions of the types of mismapping were demonstrated to be reliable with the split-half approach and to have good criterion-related validity with findings that pitch-matching with no mapping was less accurate and more dependent on the articulation consistency between the target and the intended vocal action than pitch-matching with erroneous mapping was. Furthermore, the precision of pitch-matching was positively associated with its accuracy and its dependence on articulation consistency when mismapping was analyzed on a continuum. Additionally, the data indicated that the self-imitation advantage was a function of articulation consistency. Types of sensorimotor mismapping lead to pitch-matching that differs in accuracy and its dependence on the articulation consistency between the target and the intended vocal action. Additionally, articulation consistency produces the self-advantage. Copyright © 2017 The Voice Foundation. Published by Elsevier Inc. All rights reserved.

A hybrid optic-fiber sensor network with the function of self-diagnosis and self-healing

NASA Astrophysics Data System (ADS)

Xu, Shibo; Liu, Tiegen; Ge, Chunfeng; Chen, Cheng; Zhang, Hongxia

2014-11-01

We develop a hybrid wavelength division multiplexing optical fiber network with distributed fiber-optic sensors and quasi-distributed FBG sensor arrays which detect vibrations, temperatures and strains at the same time. The network has the ability to locate the failure sites automatically designated as self-diagnosis and make protective switching to reestablish sensing service designated as self-healing by cooperative work of software and hardware. The processes above are accomplished by master-slave processors with the help of optical and wireless telemetry signals. All the sensing and optical telemetry signals transmit in the same fiber either working fiber or backup fiber. We take wavelength 1450nm as downstream signal and wavelength 1350nm as upstream signal to control the network in normal circumstances, both signals are sent by a light emitting node of the corresponding processor. There is also a continuous laser wavelength 1310nm sent by each node and received by next node on both working and backup fibers to monitor their healthy states, but it does not carry any message like telemetry signals do. When fibers of two sensor units are completely damaged, the master processor will lose the communication with the node between the damaged ones.However we install RF module in each node to solve the possible problem. Finally, the whole network state is transmitted to host computer by master processor. Operator could know and control the network by human-machine interface if needed.

High-Density Near-Field Readout Using Diamond Solid Immersion Lens

NASA Astrophysics Data System (ADS)

Shinoda, Masataka; Saito, Kimihiro; Kondo, Takao; Nakaoki, Ariyoshi; Furuki, Motohiro; Takeda, Minoru; Yamamoto, Masanobu; Schaich, Thomas J.; van Oerle, Bart M.; Godfried, Herman P.; Kriele, Paul A. C.; Houwman, Evert P.; Nelissen, Wim H. M.; Pels, Gert J.; Spaaij, Paul G. M.

2006-02-01

We investigated high-density near-field readout using a diamond solid immersion lens (SIL). A synthetic single-crystal chemical vapor deposition diamond provides a high refractive index and a high transmission for a wide wavelength range. Since the refractive index at a wavelength of 405 nm is 2.458, we could design a solid immersion lens with an effective numerical aperture of 2.34. Using the diamond SIL, we observed the eye pattern of a 150-GB-capacity (104.3 Gbit/in.2) disk with a track pitch of 130 nm and a bit length of 47.6 nm.

Galaxy Zoo and SPARCFIRE: constraints on spiral arm formation mechanisms from spiral arm number and pitch angles

NASA Astrophysics Data System (ADS)

Hart, Ross E.; Bamford, Steven P.; Hayes, Wayne B.; Cardamone, Carolin N.; Keel, William C.; Kruk, Sandor J.; Lintott, Chris J.; Masters, Karen L.; Simmons, Brooke D.; Smethurst, Rebecca J.

2017-12-01

In this paper, we study the morphological properties of spiral galaxies, including measurements of spiral arm number and pitch angle. Using Galaxy Zoo 2, a stellar mass-complete sample of 6222 SDSS spiral galaxies is selected. We use the machine vision algorithm SPARCFIRE to identify spiral arm features and measure their associated geometries. A support vector machine classifier is employed to identify reliable spiral features, with which we are able to estimate pitch angles for half of our sample. We use these machine measurements to calibrate visual estimates of arm tightness, and hence estimate pitch angles for our entire sample. The properties of spiral arms are compared with respect to various galaxy properties. The star formation properties of galaxies vary significantly with arm number, but not pitch angle. We find that galaxies hosting strong bars have spiral arms substantially (4°-6°) looser than unbarred galaxies. Accounting for this, spiral arms associated with many-armed structures are looser (by 2°) than those in two-armed galaxies. In contrast to this average trend, galaxies with greater bulge-to-total stellar mass ratios display both fewer and looser spiral arms. This effect is primarily driven by the galaxy disc, such that galaxies with more massive discs contain more spiral arms with tighter pitch angles. This implies that galaxy central mass concentration is not the dominant cause of pitch angle and arm number variations between galaxies, which in turn suggests that not all spiral arms are governed by classical density waves or modal theories.

Congenital amusia in speakers of a tone language: association with lexical tone agnosia.

PubMed

Nan, Yun; Sun, Yanan; Peretz, Isabelle

2010-09-01

Congenital amusia is a neurogenetic disorder that affects the processing of musical pitch in speakers of non-tonal languages like English and French. We assessed whether this musical disorder exists among speakers of Mandarin Chinese who use pitch to alter the meaning of words. Using the Montreal Battery of Evaluation of Amusia, we tested 117 healthy young Mandarin speakers with no self-declared musical problems and 22 individuals who reported musical difficulties and scored two standard deviations below the mean obtained by the Mandarin speakers without amusia. These 22 amusic individuals showed a similar pattern of musical impairment as did amusic speakers of non-tonal languages, by exhibiting a more pronounced deficit in melody than in rhythm processing. Furthermore, nearly half the tested amusics had impairments in the discrimination and identification of Mandarin lexical tones. Six showed marked impairments, displaying what could be called lexical tone agnosia, but had normal tone production. Our results show that speakers of tone languages such as Mandarin may experience musical pitch disorder despite early exposure to speech-relevant pitch contrasts. The observed association between the musical disorder and lexical tone difficulty indicates that the pitch disorder as defining congenital amusia is not specific to music or culture but is rather general in nature.

Sentinel lymph nodes detection with an imaging system using Patent Blue V dye as fluorescent tracer

NASA Astrophysics Data System (ADS)

Tellier, F.; Steibel, J.; Chabrier, R.; Rodier, J. F.; Pourroy, G.; Poulet, P.

2013-03-01

Sentinel lymph node biopsy is the gold standard to detect metastatic invasion from primary breast cancer. This method can help patients avoid full axillary chain dissection, thereby decreasing the risk of morbidity. We propose an alternative to the traditional isotopic method, to detect and map the sentinel lymph nodes. Indeed, Patent Blue V is the most widely used dye in clinical routine for the visual detection of sentinel lymph nodes. A Recent study has shown the possibility of increasing the fluorescence quantum yield of Patent Blue V, when it is bound to human serum albumin. In this study we present a preclinical fluorescence imaging system to detect sentinel lymph nodes labeled with this fluorescent tracer. The setup is composed of a black and white CCD camera and two laser sources. One excitation source with a laser emitting at 635 nm and a second laser at 785 nm to illuminate the region of interest. The prototype is operated via a laptop. Preliminary experiments permitted to determine the device sensitivity in the μmol.L-1 range as regards the detection of PBV fluorescence signals. We also present a preclinical evaluation performed on Lewis rats, during which the fluorescence imaging setup detected the accumulation and fixation of the fluorescent dye on different nodes through the skin.

DUV phase mask for 100 nm period grating printing

NASA Astrophysics Data System (ADS)

Jourlin, Y.; Bourgin, Y.; Reynaud, S.; Parriaux, O.; Talneau, A.; Karvinen, P.; Passilly, N.; Zain, A. Md.; De La Rue, R. M.

2008-04-01

Whereas microelectronic lithography is heading to the 32 nm node and discussing immersion and double-patterning strategies, there is much which can be done with the 45 nm node in microoptics for white light processing. For instance, one of the most demanding applications in terms of achievable period is the LCD lossless polarizer, which can transmit the TM polarization and reflect the TE polarization evenly all through the visible spectrum - provided that a 1D metal grid of 100 nm period can be fabricated. The manufacture of such polarizing panels cannot resort to the step & repeat cameras of microelectronics since the substrates are too large, too thin, too wavy and full of contaminants. There is therefore a need for specific fabrication techniques. It is one of these techniques that a subgroup of partners belonging to two of the Networks of Excellence of the European Community, NEMO and ePIXnet, have decided to explore together.

An investigation into scalability and compliance for triple patterning with stitches for metal 1 at the 14nm node

NASA Astrophysics Data System (ADS)

Cork, Christopher; Miloslavsky, Alexander; Friedberg, Paul; Luk-Pat, Gerry

2013-04-01

Lithographers had hoped that single patterning would be enabled at the 20nm node by way of EUV lithography. However, due to delays in EUV readiness, double patterning with 193i lithography is currently relied upon for volume production for the 20nm node's metal 1 layer. At the 14nm and likely at the 10nm node, LE-LE-LE triple patterning technology (TPT) is one of the favored options [1,2] for patterning local interconnect and Metal 1 layers. While previous research has focused on TPT for contact mask, metal layers offer new challenges and opportunities, in particular the ability to decompose design polygons across more than one mask. The extra flexibility offered by the third mask and ability to leverage polygon stitching both serve to improve compliance. However, ensuring TPT compliance - the task of finding a 3-color mask decomposition for a design - is still a difficult task. Moreover, scalability concerns multiply the difficulty of triple patterning decomposition which is an NP-complete problem. Indeed previous work shows that network sizes above a few thousand nodes or polygons start to take significantly longer times to compute [3], making full chip decomposition for arbitrary layouts impractical. In practice Metal 1 layouts can be considered as two separate problem domains, namely: decomposition of standard cells and decomposition of IP blocks. Standard cells typically include only a few 10's of polygons and should be amenable to fast decomposition. Successive design iterations should resolve compliance issues and improve packing density. Density improvements are multiplied repeatedly as standard cells are placed multiple times. IP blocks, on the other hand, may involve very large networks. This paper evaluates multiple approaches to triple patterning decomposition for the Metal 1 layer. The benefits of polygon stitching, in particular, the ability to resolve commonly encountered non-compliant layout configurations and improve packing density, are weighed against the increased difficulty in finding an optimized, legal decomposition and coping with the increased scalability challenges.

Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer

NASA Astrophysics Data System (ADS)

Li, Qiang; Lai, Billy; Lau, Kei May

2017-10-01

We report epitaxial growth of GaSb nano-ridge structures and planar thin films on V-groove patterned Si (001) substrates by leveraging the aspect ratio trapping technique. GaSb was deposited on {111} Si facets of the V-shaped trenches using metal-organic chemical vapor deposition with a 7 nm GaAs growth initiation layer. Transmission electron microscopy analysis reveals the critical role of the GaAs layer in providing a U-shaped surface for subsequent GaSb epitaxy. A network of misfit dislocations was uncovered at the GaSb/GaAs hetero-interface. We studied the evolution of the lattice relaxation as the growth progresses from closely pitched GaSb ridges to coalesced thin films using x-ray diffraction. The omega rocking curve full-width-at-half-maximum of the resultant GaSb thin film is among the lowest values reported by molecular beam epitaxy, substantiating the effectiveness of the defect necking mechanism. These results thus present promising opportunities for the heterogeneous integration of devices based on 6.1 Å family compound semiconductors.

Nearly amorphous Mo-N gratings for ultimate resolution in extreme ultraviolet interference lithography

NASA Astrophysics Data System (ADS)

Wang, L.; Kirk, E.; Wäckerlin, C.; Schneider, C. W.; Hojeij, M.; Gobrecht, J.; Ekinci, Y.

2014-06-01

We present fabrication and characterization of high-resolution and nearly amorphous Mo1 - xNx transmission gratings and their use as masks for extreme ultraviolet (EUV) interference lithography. During sputter deposition of Mo, nitrogen is incorporated into the film by addition of N2 to the Ar sputter gas, leading to suppression of Mo grain growth and resulting in smooth and homogeneous thin films with a negligible grain size. The obtained Mo0.8N0.2 thin films, as determined by x-ray photoelectron spectroscopy, are characterized to be nearly amorphous using x-ray diffraction. We demonstrate a greatly reduced Mo0.8N0.2 grating line edge roughness compared with pure Mo grating structures after e-beam lithography and plasma dry etching. The amorphous Mo0.8N0.2 thin films retain, to a large extent, the benefits of Mo as a phase grating material for EUV wavelengths, providing great advantages for fabrication of highly efficient diffraction gratings with extremely low roughness. Using these grating masks, well-resolved dense lines down to 8 nm half-pitch are fabricated with EUV interference lithography.

Dry etching technologies for reflective multilayer

NASA Astrophysics Data System (ADS)

Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

2012-11-01

We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

Fringing-field dielectrophoretic assembly of ultrahigh-density semiconducting nanotube arrays with a self-limited pitch

NASA Astrophysics Data System (ADS)

Cao, Qing; Han, Shu-Jen; Tulevski, George S.

2014-09-01

One key challenge of realizing practical high-performance electronic devices based on single-walled carbon nanotubes is to produce electronically pure nanotube arrays with both a minuscule and uniform inter-tube pitch for sufficient device-packing density and homogeneity. Here we develop a method in which the alternating voltage-fringing electric field formed between surface microelectrodes and the substrate is utilized to assemble semiconducting nanotubes into well-aligned, ultrahigh-density and submonolayered arrays, with a consistent pitch as small as 21±6 nm determined by a self-limiting mechanism, based on the unique field focusing and screening effects of the fringing field. Field-effect transistors based on such nanotube arrays exhibit record high device transconductance (>50 μS μm-1) and decent on current per nanotube (~1 μA per tube) together with high on/off ratios at a drain bias of -1 V.

Aerial image measurement technique for automated reticle defect disposition (ARDD) in wafer fabs

NASA Astrophysics Data System (ADS)

Zibold, Axel M.; Schmid, Rainer M.; Stegemann, B.; Scheruebl, Thomas; Harnisch, Wolfgang; Kobiyama, Yuji

2004-08-01

The Aerial Image Measurement System (AIMS)* for 193 nm lithography emulation has been brought into operation successfully worldwide. A second generation system comprising 193 nm AIMS capability, mini-environment and SMIF, the AIMS fab 193 plus is currently introduced into the market. By adjustment of numerical aperture (NA), illumination type and partial illumination coherence to match the conditions in 193 nm steppers or scanners, it can emulate the exposure tool for any type of reticles like binary, OPC and PSM down to the 65 nm node. The system allows a rapid prediction of wafer printability of defects or defect repairs, and critical features, like dense patterns or contacts on the masks without the need to perform expensive image qualification consisting of test wafer exposures followed by SEM measurements. Therefore, AIMS is a mask quality verification standard for high-end photo masks and established in mask shops worldwide. The progress on the AIMS technology described in this paper will highlight that besides mask shops there will be a very beneficial use of the AIMS in the wafer fab and we propose an Automated Reticle Defect Disposition (ARDD) process. With smaller nodes, where design rules are 65 nm or less, it is expected that smaller defects on reticles will occur in increasing numbers in the wafer fab. These smaller mask defects will matter more and more and become a serious yield limiting factor. With increasing mask prices and increasing number of defects and severability on reticles it will become cost beneficial to perform defect disposition on the reticles in wafer production. Currently ongoing studies demonstrate AIMS benefits for wafer fab applications. An outlook will be given for extension of 193 nm aerial imaging down to the 45 nm node based on emulation of immersion scanners.

Characterization of pixel sensor designed in 180 nm SOI CMOS technology

NASA Astrophysics Data System (ADS)

Benka, T.; Havranek, M.; Hejtmanek, M.; Jakovenko, J.; Janoska, Z.; Marcisovska, M.; Marcisovsky, M.; Neue, G.; Tomasek, L.; Vrba, V.

2018-01-01

A new type of X-ray imaging Monolithic Active Pixel Sensor (MAPS), X-CHIP-02, was developed using a 180 nm deep submicron Silicon On Insulator (SOI) CMOS commercial technology. Two pixel matrices were integrated into the prototype chip, which differ by the pixel pitch of 50 μm and 100 μm. The X-CHIP-02 contains several test structures, which are useful for characterization of individual blocks. The sensitive part of the pixel integrated in the handle wafer is one of the key structures designed for testing. The purpose of this structure is to determine the capacitance of the sensitive part (diode in the MAPS pixel). The measured capacitance is 2.9 fF for 50 μm pixel pitch and 4.8 fF for 100 μm pixel pitch at -100 V (default operational voltage). This structure was used to measure the IV characteristics of the sensitive diode. In this work, we report on a circuit designed for precise determination of sensor capacitance and IV characteristics of both pixel types with respect to X-ray irradiation. The motivation for measurement of the sensor capacitance was its importance for the design of front-end amplifier circuits. The design of pixel elements, as well as circuit simulation and laboratory measurement techniques are described. The experimental results are of great importance for further development of MAPS sensors in this technology.

Multimode marine engine room simulation system based on field bus technology

NASA Astrophysics Data System (ADS)

Zheng, Huayao; Deng, Linlin; Guo, Yi

2003-09-01

Developing multi mode MER (Marine Engine Room) Labs is the main work in Marine Simulation Center, which is the key lab of Communication Ministry of China. It includes FPP (Fixed Pitch Propeller) and CPP (Controllable Pitch Propeller) mode MER simulation systems, integrated electrical propulsion mode MER simulation system, physical mode MER lab, etc. FPP mode simulation system, which was oriented to large container ship, had been completed since 1999, and got second level of Shanghai Municipal Science and Technical Progress award. This paper mainly introduces the recent development and achievements of Marine Simulation Center. Based on the Lon Works field bus, the structure characteristics and control strategies of completely distributed intelligent control network are discussed. The experiment mode of multi-nodes field bus detection and control system is described. Besides, intelligent fault diagnosis technology about some mechatronics integration control systems explored is also involved.

Wafer-scale plasmonic and photonic crystal sensors

NASA Astrophysics Data System (ADS)

George, M. C.; Liu, J.-N.; Farhang, A.; Williamson, B.; Black, M.; Wangensteen, T.; Fraser, J.; Petrova, R.; Cunningham, B. T.

2015-08-01

200 mm diameter wafer-scale fabrication, metrology, and optical modeling results are reviewed for surface plasmon resonance (SPR) sensors based on 2-D metallic nano-dome and nano-hole arrays (NHA's) as well as 1-D photonic crystal sensors based on a leaky-waveguide mode resonance effect, with potential applications in label free sensing, surface enhanced Raman spectroscopy (SERS), and surface-enhanced fluorescence spectroscopy (SEFS). Potential markets include micro-arrays for medical diagnostics, forensic testing, environmental monitoring, and food safety. 1-D and 2-D nanostructures were fabricated on glass, fused silica, and silicon wafers using optical lithography and semiconductor processing techniques. Wafer-scale optical metrology results are compared to FDTD modeling and presented along with application-based performance results, including label-free plasmonic and photonic crystal sensing of both surface binding kinetics and bulk refractive index changes. In addition, SEFS and SERS results are presented for 1-D photonic crystal and 2-D metallic nano-array structures. Normal incidence transmittance results for a 550 nm pitch NHA showed good bulk refractive index sensitivity, however an intensity-based design with 665 nm pitch was chosen for use as a compact, label-free sensor at both 650 and 632.8 nm wavelengths. The optimized NHA sensor gives an SPR shift of about 480 nm per refractive index unit when detecting a series of 0-40% glucose solutions, but according to modeling shows about 10 times greater surface sensitivity when operating at 532 nm. Narrow-band photonic crystal resonance sensors showed quality factors over 200, with reasonable wafer-uniformity in terms of both resonance position and peak height.

Cold-development tool and technique for the ultimate resolution of ZEP520A to fabricate an EB master mold for nano-imprint lithography for 1Tbit/inch2 BPM development

NASA Astrophysics Data System (ADS)

Kobayashi, Hideo; Iyama, Hiromasa; Kagatsume, Takeshi; Watanabe, Tsuyoshi

2012-11-01

Cold-development is well-known for resolution enhancement on ZEP520A. Dipping a wafer in a developer solvent chilled by a freezer, such a typical method had been employed. But, it is obvious that the dip-development method has several inferiorities such as developer temperature instability, temperature inconsistency between developer and a wafer, water-condensation on drying. We then built a single wafer spin-develop tool, and established a process sequence, to solve those difficulties. And, we tried to see their effect down to -10degC over various developers. In specific, we tried to make hole patterns in hexagonal closest packing in 40nm, 35nm, 30nm, 25nm pitch, and examined holes pattern quality and resolution limit by varying setting temperature from room temperature to -10degC in the cold-development, as well as varying developer chemistry from the standard developer ZED N-50 (n-amyl acetate, 100%) to MiBK and IPA mixture which was a rinsing solvent mixture originally. We also examined the other developer (poor solvent mixture) we designed, N-50 and fluorocarbon (FC) mixture, MiBK and FC mixture, and IPA+FC mixture. This paper describes cold-development tool and technique, and its results down to minus (-) 10degC, for ZEP520A resolution enhancement to obtain 1Xnm bits (holes) in 25nm pitch to fabricate an EB master mold for Nano-Imprinting Lithography for 1Tbit/in2 bit patterned media (BPM) in HDD development and production.

A model for the submarine depthkeeping team

NASA Technical Reports Server (NTRS)

Ware, J. R.; Best, J. F.; Bozzi, P. J.; Kleinman, D. W.

1981-01-01

The most difficult task the depthkeeping team must face occurs during periscope-depth operations during which they may be required to maintain a submarine several hundred feet long within a foot of ordered depth and within one-half degree of ordered pitch. The difficulty is compounded by the facts that wave generated forces are extremely high, depth and pitch signals are very noisy and submarine speed is such that overall dynamics are slow. A mathematical simulation of the depthkeeping team based on the optimal control models is described. A solution of the optimal team control problem with an output control restriction (limited display to each controller) is presented.

Theoretical Manual for Analysis of Arch Dams

DTIC Science & Technology

1993-07-01

eight nodes lying on the midsurface , half-way between the corresponding surface nodes (Pawsey 1970). Each node on the midsurface has five DOF’s, three...translations in the global directions, and two rotations about two axes perpendicular to the midsurface normal (Figure 5-4). The sixth DOF, associated...Figure 5-3). The coordinates of any point within the element are described in terms of the midsurface coordinates and a vector connecting the two upper

The Density-wave Theory and Spiral Structures by Looking at Spiral Arms through a Multi-wavelength StudyHamed Pour-Imani1,2, Daniel Kennefick1,2, Julia Kennefick1,2, Mohamed Shameer Abdeen1,2, Eric Monson1,2, Douglas W. Shields1,2, B. L. Davis31Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA2Arkansas Center for Space & Planetary Sciences, Univ. of Arkans

NASA Astrophysics Data System (ADS)

Pour-Imani, Hamed; Kennefick, Daniel; Kennefick, Julia; Shameer Abdeen, Mohammad; Monson, Erick; Shields, Douglas William; Davis, Benjamin L.

2018-01-01

The density-wave theory of spiral structure, though first proposed as long ago as the mid-1960s by C.C. Lin and F. Shu, continues to be challenged by rival theories, such as the manifold theory. One test between these theories which has been proposed is that the pitch angle of spiral arms for galaxies should vary with the wavelength of the image in the density-wave theory, but not in the manifold theory. The reason is that stars are born in the density wave but move out of it as they age. In this study, we combined large sample size with a wide range of wavelengths to investigate this issue. For each galaxy, we used wavelength FUV151nm, U-band, H-alpha, optical wavelength B-band and infrared 3.6 and 8.0μm. We measured the pitch angle with the 2DFFT and Spirality codes (Davis et al. 2012; Shields et al. 2015). We find that the B-band and 3.6μm images have smaller pitch angles than the infrared 8.0μm image in all cases, in agreement with the prediction of the density-wave theory. We also find that the pitch angle at FUV and H-alpha are close to the measurements made at 8.0μm. The Far-ultraviolet wavelength at 151nm shows very young, very bright UV stars still in the star-forming region (they are so bright as to be visible there and so short-lived that they never move out of it). We find that for both sets of measurements (2dFFT and Spirality) the 8.0μm, H-alpha and ultraviolet images agree in their pitch angle measurements, suggesting that they are, in fact, sensitive to the same region. By contrast, the 3.6μm and B-band images are uniformly tighter in pitch angle measurements than these wavelengths, suggesting that the density-wave picture is correct.

Line-frequency doubling of directed self-assembly patterns for single-digit bit pattern media lithography

NASA Astrophysics Data System (ADS)

Patel, K. C.; Ruiz, R.; Lille, J.; Wan, L.; Dobiz, E.; Gao, H.; Robertson, N.; Albrecht, T. R.

2012-03-01

Directed self-assembly is emerging as a promising technology to define sub-20nm features. However, a straightforward path to scale block copolymer lithography to single-digit fabrication remains challenging given the diverse material properties found in the wide spectrum of self-assembling materials. A vast amount of block copolymer research for industrial applications has been dedicated to polystyrene-b-methyl methacrylate (PS-b-PMMA), a model system that displays multiple properties making it ideal for lithography, but that is limited by a weak interaction parameter that prevents it from scaling to single-digit lithography. Other block copolymer materials have shown scalability to much smaller dimensions, but at the expense of other material properties that could delay their insertion into industrial lithographic processes. We report on a line doubling process applied to block copolymer patterns to double the frequency of PS-b-PMMA line/space features, demonstrating the potential of this technique to reach single-digit lithography. We demonstrate a line-doubling process that starts with directed self-assembly of PS-b-PMMA to define line/space features. This pattern is transferred into an underlying sacrificial hard-mask layer followed by a growth of self-aligned spacers which subsequently serve as hard-masks for transferring the 2x frequency doubled pattern to the underlying substrate. We applied this process to two different block copolymer materials to demonstrate line-space patterns with a half pitch of 11nm and 7nm underscoring the potential to reach single-digit critical dimensions. A subsequent patterning step with perpendicular lines can be used to cut the fine line patterns into a 2-D array of islands suitable for bit patterned media. Several integration challenges such as line width control and line roughness are addressed.

Writing time estimation of EB mask writer EBM-9000 for hp16nm/logic11nm node generation

NASA Astrophysics Data System (ADS)

Kamikubo, Takashi; Takekoshi, Hidekazu; Ogasawara, Munehiro; Yamada, Hirokazu; Hattori, Kiyoshi

2014-10-01

The scaling of semiconductor devices is slowing down because of the difficulty in establishing their functionality at the nano-size level and also because of the limitations in fabrications, mainly the delay of EUV lithography. While multigate devices (FinFET) are currently the main driver for scalability, other types of devices, such as 3D devices, are being realized to relax the scaling of the node. In lithography, double or multiple patterning using ArF immersion scanners is still a realistic solution offered for the hp16nm node fabrication. Other lithography candidates are those called NGL (Next Generation Lithography), such as DSA (Directed-Self-Assembling) or nanoimprint. In such situations, shot count for mask making by electron beam writers will not increase. Except for some layers, it is not increasing as previously predicted. On the other hand, there is another aspect that increases writing time. The exposure dose for mask writing is getting higher to meet tighter specifications of CD uniformity, in other words, reduce LER. To satisfy these requirements, a new electron beam mask writer, EBM-9000, has been developed for hp16nm/logic11nm generation. Electron optical system, which has the immersion lens system, was evolved from EBM-8000 to achieve higher current density of 800A/cm2. In this paper, recent shot count and dose trend are discussed. Also, writing time is estimated for the requirements in EBM-9000.

Molecular organization of cytokinesis nodes and contractile rings by super-resolution fluorescence microscopy of live fission yeast

PubMed Central

Laplante, Caroline; Huang, Fang; Tebbs, Irene R.; Bewersdorf, Joerg; Pollard, Thomas D.

2016-01-01

Cytokinesis in animals, fungi, and amoebas depends on the constriction of a contractile ring built from a common set of conserved proteins. Many fundamental questions remain about how these proteins organize to generate the necessary tension for cytokinesis. Using quantitative high-speed fluorescence photoactivation localization microscopy (FPALM), we probed this question in live fission yeast cells at unprecedented resolution. We show that nodes, protein assembly precursors to the contractile ring, are discrete structural units with stoichiometric ratios and distinct distributions of constituent proteins. Anillin Mid1p, Fes/CIP4 homology-Bin/amphiphysin/Rvs (F-BAR) Cdc15p, IQ motif containing GTPase-activating protein (IQGAP) Rng2p, and formin Cdc12p form the base of the node that anchors the ends of myosin II tails to the plasma membrane, with myosin II heads extending into the cytoplasm. This general node organization persists in the contractile ring where nodes move bidirectionally during constriction. We observed the dynamics of the actin network during cytokinesis, starting with the extension of short actin strands from nodes, which sometimes connected neighboring nodes. Later in cytokinesis, a broad network of thick bundles coalesced into a tight ring around the equator of the cell. The actin ring was ∼125 nm wide and ∼125 nm thick. These observations establish the organization of the proteins in the functional units of a cytokinetic contractile ring. PMID:27647921

Model based high NA anamorphic EUV RET

NASA Astrophysics Data System (ADS)

Jiang, Fan; Wiaux, Vincent; Fenger, Germain; Clifford, Chris; Liubich, Vlad; Hendrickx, Eric

2018-03-01

With the announcement of the extension of the Extreme Ultraviolet (EUV) roadmap to a high NA lithography tool that utilizes anamorphic optics design, an investigation of design tradeoffs unique to the imaging of anamorphic lithography tool is shown. An anamorphic optical proximity correction (OPC) solution has been developed that models fully the EUV near field electromagnetic effects and the anamorphic imaging using the Domain Decomposition Method (DDM). Clips of imec representative for the N3 logic node were used to demonstrate the OPC solutions on critical layers that will benefit from the increased contrast at high NA using anamorphic imaging. However, unlike isomorphic case, from wafer perspective, OPC needs to treat x and y differently. In the paper, we show a design trade-off seen unique to Anamorphic EUV, namely that using a mask rule of 48nm (mask scale), approaching current state of the art, limitations are observed in the available correction that can be applied to the mask. The metal pattern has a pitch of 24nm and CD of 12nm. During OPC, the correction of the metal lines oriented vertically are being limited by the mask rule of 12nm 1X. The horizontally oriented lines do not suffer from this mask rule limitation as the correction is allowed to go to 6nm 1X. For this example, the masks rules will need to be more aggressive to allow complete correction, or design rules and wafer processes (wafer rotation) would need to be created that utilize the orientation that can image more aggressive features. When considering VIA or block level correction, aggressive polygon corner to corner designs can be handled with various solutions, including applying a 45 degree chop. Multiple solutions are discussed with the metrics of edge placement error (EPE) and Process Variation Bands (PVBands), together with all the mask constrains. Noted in anamorphic OPC, the 45 degree chop is maintained at the mask level to meet mask manufacturing constraints, but results in skewed angle edge in wafer level correction. In this paper, we used both contact (Via/block) patterns and metal patterns for OPC practice. By comparing the EPE of horizontal and vertical patterns with a fixed mask rule check (MRC), and the PVBand, we focus on the challenges and the solutions of OPC with anamorphic High-NA lens.

Traceable Mueller polarimetry and scatterometry for shape reconstruction of grating structures

NASA Astrophysics Data System (ADS)

Hansen, Poul-Erik; Madsen, Morten H.; Lehtolahti, Joonas; Nielsen, Lars

2017-11-01

Dimensional measurements of multi-patterned transmission gratings with a mixture of long and small periods are great challenges for optical metrology today. It is a further challenge when the aspect ratio of the structures is high, that is, when the height of structures is larger than the pitch. Here we consider a double patterned transmission grating with pitches of 500 nm and 20 000 nm. For measuring the geometrical properties of double patterned transmission grating we use a combined spectroscopic Mueller polarimetry and scatterometry setup. For modelling the experimentally obtained data we rigorously compute the scattering signal by solving Maxwell's equations using the RCWA method on a supercell structure. We also present a new method for analyzing the Mueller polarimetry parameters that performs the analysis in the measured variables. This new inversion method for finding the best fit between measured and calculated values are tested on silicon gratings with periods from 300 to 600 nm. The method is shown to give results within the expanded uncertainty of reference AFM measurements. The application of the new inversion method and the supercell structure to the double patterned transmission grating gives best estimates of dimensional quantities that are in fair agreement with those derived from local AFM measurements

Nano-patterned visible wavelength filter integrated with an image sensor exploiting a 90-nm CMOS process

NASA Astrophysics Data System (ADS)

Yoon, Yeo-Taek; Lee, Sang-Shin; Lee, Byoung-Su

2012-01-01

A highly efficient visible wavelength filter enabling a homogeneous integration with an image sensor was proposed and manufactured by employing a standard 90-nm CMOS process. A one dimensional subwavelength Al grating overlaid with an oxide film was built on top of an image sensor to serve as a low-pass wavelength filter; a microlens was then formed atop the filter to achieve beam focusing. The structural parameters for the filter were: a grating pitch of 300 nm, a grating height of 170 nm, and a 150-nm thick oxide overlay. The overall transmission was observed to reach up to 80% in the visible band with a decent roll-off near ∼700 nm. Finally, the discrepancy between the observed and calculated result was accounted for by appropriately modeling the implemented metallic grating structure, accompanying an undercut sidewall.

Solar-blind deep-UV band-pass filter (250 - 350 nm) consisting of a metal nano-grid fabricated by nanoimprint lithography.

PubMed

Li, Wen-Di; Chou, Stephen Y

2010-01-18

We designed, fabricated and demonstrated a solar-blind deep-UV pass filter, that has a measured optical performance of a 27% transmission peak at 290 nm, a pass-band width of 100 nm (from 250 to 350 nm), and a 20dB rejection ratio between deep-UV wavelength and visible wavelength. The filter consists of an aluminum nano-grid, which was made by coating 20 nm Al on a SiO(2) square grid with 190 nm pitch, 30 nm linewidth and 250 nm depth. The performances agree with a rigorous coupled wave analysis. The wavelength for the peak transmission and the pass-bandwidth can be tuned through adjusting the metal nano-grid dimensions. The filter was fabricated by nanoimprint lithography, hence is large area and low cost. Combining with Si photodetectors, the filter offers simple yet effective and low cost solar-blind deep-UV detection at either a single device or large-area complex integrated imaging array level.

Electric-acoustic pitch comparisons in single-sided-deaf cochlear implant users: frequency-place functions and rate pitch.

PubMed

Schatzer, Reinhold; Vermeire, Katrien; Visser, Daniel; Krenmayr, Andreas; Kals, Mathias; Voormolen, Maurits; Van de Heyning, Paul; Zierhofer, Clemens

2014-03-01

Eight cochlear implant users with near-normal hearing in their non-implanted ear compared pitch percepts for pulsatile electric and acoustic pure-tone stimuli presented to the two ears. Six subjects were implanted with a 31-mm MED-EL FLEX(SOFT) electrode, and two with a 24-mm medium (M) electrode, with insertion angles of the most apical contacts ranging from 565° to 758°. In the first experiment, frequency-place functions were derived from pure-tone matches to 1500-pps unmodulated pulse trains presented to individual electrodes and compared to Greenwood's frequency position map along the organ of Corti. While the overall median downward shift of the obtained frequency-place functions (-0.16 octaves re. Greenwood) and the mean shifts in the basal (<240°; -0.33 octaves) and middle (-0.35 octaves) regions were statistically significant, the shift in the apical region (>480°; 0.26 octaves) was not. Standard deviations of frequency-place functions were approximately half an octave at electrode insertion angles below 480°, increasing to an octave at higher angular locations while individual functions were gradually leveling off. In a second experiment, subjects matched the rates of unmodulated pulse trains presented to individual electrodes in the apical half of the array to low-frequency pure tones between 100 Hz and 450 Hz. The aim was to investigate the influence of electrode place on the salience of temporal pitch cues, for coding strategies that present temporal fine structure information via rate modulations on select apical channels. Most subjects achieved reliable matches to tone frequencies from 100 Hz to 300 Hz only on electrodes at angular insertion depths beyond 360°, while rate-matches to 450-Hz tones were primarily achieved on electrodes at shallower insertion angles. Only for electrodes in the second turn the average slopes of rate-pitch functions did not differ significantly from the pure-tone references, suggesting their use for the encoding of within-channel fine frequency information via rate modulations in temporal fine structure stimulation strategies. Copyright © 2013 Elsevier B.V. All rights reserved.

Empirical OPC rule inference for rapid RET application

NASA Astrophysics Data System (ADS)

Kulkarni, Anand P.

2006-10-01

A given technological node (45 nm, 65 nm) can be expected to process thousands of individual designs. Iterative methods applied at the node consume valuable days in determining proper placement of OPC features, and manufacturing and testing mask correspondence to wafer patterns in a trial-and-error fashion for each design. Repeating this fabrication process for each individual design is a time-consuming and expensive process. We present a novel technique which sidesteps the requirement to iterate through the model-based OPC analysis and pattern verification cycle on subsequent designs at the same node. Our approach relies on the inference of rules from a correct pattern at the wafer surface it relates to the OPC and pre-OPC pattern layout files. We begin with an offline phase where we obtain a "gold standard" design file that has been fab-tested at the node with a prepared, post-OPC layout file that corresponds to the intended on-wafer pattern. We then run an offline analysis to infer rules to be used in this method. During the analysis, our method implicitly identifies contextual OPC strategies for optimal placement of RET features on any design at that node. Using these strategies, we can apply OPC to subsequent designs at the same node with accuracy comparable to the original design file but significantly smaller expected runtimes. The technique promises to offer a rapid and accurate complement to existing RET application strategies.

Assessment of a Low-Power 65 nm CMOS Technology for Analog Front-End Design

NASA Astrophysics Data System (ADS)

Manghisoni, Massimo; Gaioni, Luigi; Ratti, Lodovico; Re, Valerio; Traversi, Gianluca

2014-02-01

This work is concerned with the study of the analog properties of MOSFET devices belonging to a 65 nm CMOS technology with emphasis on intrinsic voltage gain and noise performance. This node appears to be a robust and promising solution to cope with the unprecedented requirements set by silicon vertex trackers in experiments upgrades and future colliders as well as by imaging detectors at light sources and free electron lasers. In this scaled-down technology, the impact of new dielectric materials and processing techniques on the analog behavior of MOSFETs has to be carefully evaluated. An inversion level design methodology has been adopted to analyze data obtained from device measurements and provide a powerful tool to establish design criteria for detector front-ends in this nanoscale CMOS process. A comparison with data coming from less scaled technologies, such as 90 nm and 130 nm nodes, is also provided and can be used to evaluate the resolution limits achievable for low-noise charge sensitive amplifiers in the 100 nm minimum feature size range.

Parametric study of a simultaneous pitch/yaw thrust vectoring single expansion ramp nozzle

NASA Technical Reports Server (NTRS)

Schirmer, Alberto W.; Capone, Francis J.

1989-01-01

In the course of the last eleven years, the concept of thrust vectoring has emerged as a promising method of enhancing aircraft control capabilities in post-stall flight incursions during combat. In order to study the application of simultaneous pitch and yaw vectoring to single expansion ramp nozzles, a static test was conducted in the NASA-Langley 16 foot transonic tunnel. This investigation was based on internal performance data provided by force, mass flow and internal pressure measurements at nozzle pressure ratios up to 8. The internal performance characteristics of the nozzle were studied for several combinations of six different parameters: yaw vectoring angle, pitch vectoring angle, upper ramp cutout, sidewall hinge location, hinge inclination angle and sidewall containment. Results indicated a 2-to- 3-percent decrease in resultant thrust ratio with vectoring in either pitch or yaw. Losses were mostly associated with the turning of supersonic flow. Resultant thrust ratios were also decreased by sideways expansion of the jet. The effects of cutback corners in the upper ramp and lower flap on performance were small. Maximum resultant yaw vector angles, about half of the flap angle, were achieved for the configuration with the most forward hinge location.

Approximate reasoning-based learning and control for proximity operations and docking in space

NASA Technical Reports Server (NTRS)

Berenji, Hamid R.; Jani, Yashvant; Lea, Robert N.

1991-01-01

A recently proposed hybrid-neutral-network and fuzzy-logic-control architecture is applied to a fuzzy logic controller developed for attitude control of the Space Shuttle. A model using reinforcement learning and learning from past experience for fine-tuning its knowledge base is proposed. Two main components of this approximate reasoning-based intelligent control (ARIC) model - an action-state evaluation network and action selection network are described as well as the Space Shuttle attitude controller. An ARIC model for the controller is presented, and it is noted that the input layer in each network includes three nodes representing the angle error, angle error rate, and bias node. Preliminary results indicate that the controller can hold the pitch rate within its desired deadband and starts to use the jets at about 500 sec in the run.

STRONG EVIDENCE FOR THE DENSITY-WAVE THEORY OF SPIRAL STRUCTURE IN DISK GALAXIES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pour-Imani, Hamed; Kennefick, Daniel; Kennefick, Julia

2016-08-10

The density-wave theory of galactic spiral-arm structure makes a striking prediction that the pitch angle of spiral arms should vary with the wavelength of the galaxy’s image. The reason is that stars are born in the density wave but move out of it as they age. They move ahead of the density wave inside the co-rotation radius, and fall behind outside of it, resulting in a tighter pitch angle at wavelengths that image stars (optical and near-infrared) than those that are associated with star formation (far-infrared and ultraviolet). In this study we combined large sample size with wide range ofmore » wavelengths, from the ultraviolet to the infrared to investigate this issue. For each galaxy we used an optical wavelength image ( B -band: 445 nm) and images from the Spitzer Space Telescope at two infrared wavelengths (infrared: 3.6 and 8.0 μ m) and we measured the pitch angle with the 2DFFT and Spirality codes. We find that the B -band and 3.6 μ m images have smaller pitch angles than the infrared 8.0 μ m image in all cases, in agreement with the prediction of density-wave theory. We also used images in the ultraviolet from Galaxy Evolution Explorer , whose pitch angles agreed with the measurements made at 8 μ m.« less

Inspection of imprint lithography patterns for semiconductor and patterned media

NASA Astrophysics Data System (ADS)

Resnick, Douglas J.; Haase, Gaddi; Singh, Lovejeet; Curran, David; Schmid, Gerard M.; Luo, Kang; Brooks, Cindy; Selinidis, Kosta; Fretwell, John; Sreenivasan, S. V.

2010-03-01

Imprint lithography has been shown to be an effective technique for replication of nano-scale features. Acceptance of imprint lithography for manufacturing will require demonstration that it can attain defect levels commensurate with the requirements of cost-effective device production. This work summarizes the results of defect inspections of semiconductor masks, wafers and hard disks patterned using Jet and Flash Imprint Lithography (J-FILTM). Inspections were performed with optical and e-beam based automated inspection tools. For the semiconductor market, a test mask was designed which included dense features (with half pitches ranging between 32 nm and 48 nm) containing an extensive array of programmed defects. For this work, both e-beam inspection and optical inspection were used to detect both random defects and the programmed defects. Analytical SEMs were then used to review the defects detected by the inspection. Defect trends over the course of many wafers were observed with another test mask using a KLA-T 2132 optical inspection tool. The primary source of defects over 2000 imprints were particle related. For the hard drive market, it is important to understand the defectivity of both the template and the imprinted disk. This work presents a methodology for automated pattern inspection and defect classification for imprint-patterned media. Candela CS20 and 6120 tools from KLA-Tencor map the optical properties of the disk surface, producing highresolution grayscale images of surface reflectivity, scattered light, phase shift, etc. Defects that have been identified in this manner are further characterized according to the morphology

PLZT Electrooptic Ceramic Photonic Devices for Surface-Normal Operation in Trenches Cut Across Arrays of Optical Fiber

NASA Astrophysics Data System (ADS)

Hirabayashi, Katsuhiko

2005-03-01

Simple Pb_1-x La_x(Zr_y Ti_z)_1-x/4 O3 (PLZT) electrooptic ceramic photonic device arrays for surface-normal operation have been developed for application to polarization-controller arrays and Fabry-Pérot tunable filter arrays. These arrays are inserted in trenches cut across fiber arrays. Each element of the arrayed structure corresponds to one optical beam and takes the form of a cell. Each sidewall of the cell (width: 50-80 μm) is coated to form an electrode. The arrays have 16 elements at a pitch of 250 μm. The phase modulator has about 1 dB of loss and a half-wavelength voltage of 120 V. A cascade of two PLZT phase modulators (thickness: 300 μm), with each attached to a polyimide lambda/2 plate (thickness:15 μm), is capable of converting an arbitrary polarization to the transverse-electric (TE) or transverse-magnetic (TM) polarization. The response time is 1 μs. The Fabry-Pérot tunable filters have a thickness of 50 μm . The front and back surfaces of each cell are coated by 99%-reflective mirror. The free spectral range (FSR) of the filters is about 10 nm, tunable range is about 10 nm, loss is 2.2 dB, and finesse is 150. The tuning speed of these devices is high, taking only 1 μs.

Way for LEEPL technology to succeed in memory device application

NASA Astrophysics Data System (ADS)

Kim, In-Sung; Woo, Sang-Gyun; Cho, Han-Ku; Han, Woo-Sung; Moon, Joo-Tae

2004-05-01

Lithography for 65nm-node device is drawing a lot of attentions these days especially because lithography solution for this node is not clear and even tool makers tend to wait for the consensus in lithography roadmap to avoid the risk of erroneous amount of investment. Recently proposed concept of low energy electron-beam proximity-projection lithography (LEEPL)1,2 technology has already released its first production machine in 2003, which is being expected to cover the design rule down to 65nm-node and even smaller3. Although production of semiconductor device has been pursuing optical lithography, without any optical technology that is proved as a convincing solution for 65nm node and below, we need to take account of all the candidates. So we made an investigation on LEEPL technology and evaluated beta and first production tool to see the feasibility of printing sub-70nm resolution and of optic-first mix-and-match overlay from a chip maker"s point of view. Two different kinds of stencil masks were fabricated for the evaluation, which are fabricated in SiC and Si membrane. The former mask is for sparse contact holes(C/H) and the latter for dense C/Hs. Beta-tool showed a good resolving power of sub-70nm sparse C/Hs of SRAM with negligibly small proximity effect. It implies that LEEPL does not require much effort for proximity correction comparing to that required in optical lithography, which is one of the biggest issues in low-k1. LEEPL also showed a good capability of optic-first mix-and-match overlay correction and this is the most stringent and important functionality for optic-first mix-and-match application. However random intra-membrane image placement(IP) error that is a little bit larger than the requirement for sub-70nm node was observed, which is interpreted to come from the larger stress of 100MPa in 3X3mm2 dry-etched SiC unit membrane. For dense C/Hs, we failed, to the contrary, to obtain any good quality of stencil masks for DRAM cell patterns because of e-beam proximity effect which is unavoidable in the reversed order of front-side forward direct writing and back-side later membrane formation. Pros and cons of LEEPL technology are discussed based on the evaluation results and estimation from the memory device standpoint. We also propose a novel concept of stencil mask that can be helpful in memory device application.

Exploring EUV and SAQP pattering schemes at 5nm technology node

NASA Astrophysics Data System (ADS)

Hamed Fatehy, Ahmed; Kotb, Rehab; Lafferty, Neal; Jiang, Fan; Word, James

2018-03-01

For years, Moore's law keeps driving the semiconductors industry towards smaller dimensions and higher density chips with more devices. Earlier, the correlation between exposure source's wave length and the smallest resolvable dimension, mandated the usage of Deep Ultra-Violent (DUV) optical lithography system which has been used for decades to sustain Moore's law, especially when immersion lithography was introduced with 193nm ArF laser sources. As dimensions of devices get smaller beyond Deep Ultra-Violent (DUV) optical resolution limits, the need for Extremely Ultra-Violent (EUV) optical lithography systems was a must. However, EUV systems were still under development at that time for the mass-production in semiconductors industry. Theretofore, Multi-Patterning (MP) technologies was introduced to swirl about DUV optical lithography limitations in advanced nodes beyond minimum dimension (CD) of 20nm. MP can be classified into two main categories; the first one is to split the target itself across multiple masks that give the original target patterns when they are printed. This category includes Double, Triple and Quadruple patterning (DP, TP, and QP). The second category is the Self-Aligned Patterning (SAP) where the target is divided into Mandrel patterns and non-Mandrel patterns. The Mandrel patterns get printed first, then a self-aligned sidewalls are grown around these printed patterns drawing the other non-Mandrel targets, afterword, a cut mask(s) is used to define target's line-ends. This approach contains Self-Aligned-Double Pattering (SADP) and Self-Aligned- Quadruple-Pattering (SAQP). DUV and MP along together paved the way for the industry down to 7nm. However, with the start of development at the 5nm node and the readiness of EUV, the differentiation question is aroused again, which pattering approach should be selected, direct printing using EUV or DUV with MP, or a hybrid flow that contains both DUV-MP and EUV. In this work we are comparing two potential pattering techniques for Back End Of Line (BEOL) metal layers in the 5nm technology node, the first technique is Single Exposure EUV (SE-EUV) with a Direct Patterning EUV lithography process, and the second one is Self-Aligned Quadruple Patterning (SAQP) with a hybrid lithography processes, where the drawn metal target layer is decomposed into a Mandrel mask and Blocks/Cut mask, Mandrel mask is printed using DUV 193i lithography process, while Block/Cut Mask is printed using SE-EUV lithography process. The pros and cons of each technique are quantified based on Edge-Placement-Error (EPE) and Process Variation Band (PVBand) measured at 1D and 2D edges. The layout used in this comparison is a candidate layout for Foundries 5nm process node.

An experimental and theoretical study of the aerodynamic characteristics of some generic missile concepts at Mach numbers from 2 to 6.8

NASA Technical Reports Server (NTRS)

Spearman, M. Leroy; Braswell, Dorothy O.

1994-01-01

A study has been made of the experimental and theoretical aerodynamic characteristics for some generic high-speed missile concepts at Mach numbers from 2 to 6.8. The basic body for this study had a length-to-diameter ratio of 10 with the forward half being a modified blunted ogive and the rear half being a cylinder. Modifications made to the basic body included the addition of an after body flare, the addition of highly swept cruciform wings and the addition of highly swept aft tails. The effects of some controls were also investigated with all-moving wing controls on the flared body and trailing-edge flap controls on the winged body. The results indicated that the addition of a flare, wings, or tails to the basic body all provided static longitudinal stability with varying amounts of increased axial force. The control arrangements were effective in producing increments of normal-force and pitching-moment at the lower Mach numbers. At the highest Mach number, the flap control on the winged body was ineffective in producing normal-force or pitching-moment but the all-moving wing control on the flared body, while losing pitch effectiveness, still provided normal-force increments. Calculated results obtained through the use of hypersonic impact theory were in generally good agreement with experiment at the higher Mach numbers but were not accurate at the lower Mach numbers.

DUV mask writer for BEOL 90-nm technology layers

NASA Astrophysics Data System (ADS)

Hong, Dongsung; Krishnan, Prakash; Coburn, Dianna; Jeewakhan, Nazneen; Xie, Shengqi; Broussard, Joshua; Ferguson, Bradley; Green, Kent G.; Buck, Peter; Jackson, Curt A.; Martinez, Larry

2003-12-01

Mask CD resolution and uniformity requirements for back end of line (BEOL) layers for the 90nm Technology Node push the capability of I-line mask writers; yet, do not require the capability offered by more expensive 50KeV ebeam mask writers. This suite of mask layers seems to be a perfect match for the capabilities of the DUV mask writing tools, which offer a lower cost option to the 50KeV platforms. This paper will evaluate both the mask and wafer results from all three platforms of mask writers (50KeV VSB,ETEC Alta 4300TM DUV laser and ETEC Alta 3500TM I-line laser) for a Cypress 90nm node Metal 1 layer, and demonstrate the benefits of the DUV platform with no change to OPC for this layer.

Analysis of electrical characteristics and proposal of design guide for ultra-scaled nanoplate vertical FET and 6T-SRAM

NASA Astrophysics Data System (ADS)

Seo, Youngsoo; Kim, Shinkeun; Ko, Kyul; Woo, Changbeom; Kim, Minsoo; Lee, Jangkyu; Kang, Myounggon; Shin, Hyungcheol

2018-02-01

In this paper, electrical characteristics of gate-all-around (GAA) nanoplate (NP) vertical FET (VFET) were analyzed for single transistor and 6T-SRAM cell through 3D technology computer-aided design (TCAD) simulation. In VFET, gate and extension lengths are not limited by the area of device because theses lengths are vertically located. The height of NP is assumed in 40 nm considering device fabrication method (top-down approach). According to the sizes of devices, we analyzed the performances of device such as total resistance, capacitance, intrinsic gate delay, sub-threshold swing (S.S), drain-induced barrier lowering (DIBL) and static noise margin (SNM). As the gate length becomes larger, the resistance should be smaller because the total height of NP is fixed in 40 nm. Also, when the channel thickness becomes thicker, the total resistance becomes smaller since the sheet resistances of channel and extension become smaller and the contact resistance becomes smaller due to the increasing contact area. In addition, as the length of channel pitch increases, the parasitic capacitance comes to be larger due to the increasing area of gate-drain and gate-source. The performance of RC delay is best in the shortest gate length (12 nm), the thickest channel (6 nm) and the shortest channel pitch (17 nm) owing to the reduced resistance and parasitic capacitance. However, the other performances such as DIBL, S.S, on/off ratio and SNM are worst because the short channel effect is highest in this situation. Also, we investigated the performance of the multi-channel device. As the number of channels increases, the performance of device and the reliability of SRAM improve because of reduced contact resistance, increased gate dimension and multi-channel compensation effect.

Scanner focus metrology and control system for advanced 10nm logic node

NASA Astrophysics Data System (ADS)

Oh, Junghun; Maeng, Kwang-Seok; Shin, Jae-Hyung; Choi, Won-Woong; Won, Sung-Keun; Grouwstra, Cedric; El Kodadi, Mohamed; Heil, Stephan; van der Meijden, Vidar; Hong, Jong Kyun; Kim, Sang-Jin; Kwon, Oh-Sung

2018-03-01

Immersion lithography is being extended beyond the 10-nm node and the lithography performance requirement needs to be tightened further to ensure good yield. Amongst others, good on-product focus control with accurate and dense metrology measurements is essential to enable this. In this paper, we will present new solutions that enable onproduct focus monitoring and control (mean and uniformity) suitable for high volume manufacturing environment. We will introduce the concept of pure focus and its role in focus control through the imaging optimizer scanner correction interface. The results will show that the focus uniformity can be improved by up to 25%.

Triple-axis common-pivot arm wrist device for manipulative applications

NASA Technical Reports Server (NTRS)

Kersten, L.; Johnston, J. D.

1980-01-01

A concept in manipulator development to overcome the 'weak wrist syndrome', a triple-axis common-pivot arm wrist (TACPAW), is presented. It contains torque motors for actuation, tachometers for measuring rate, and resolvers for position measurements. Furthermore, it provides three degrees of freedom, i.e., pitch, yaw, and roll, in a single manipulator joint. The advantages of this development are increased strength, compactness, and simplification of controls. Designed to be compatible with the protoflight manipulator arm, the joints of TACPAW are back-driveable with + or - 45 deg rotation in pitch, + or - 45 deg in yaw and continuous roll in either direction while delivering 20.5 N-m (15 ft-lb) torque in each of the three movements.

(QC Themes) Type-Two Quantum Computing in PBG-Based Cavities for Efficient Simulation of Lattice Gas Dynamics

DTIC Science & Technology

2008-04-26

substrate Si3N4 Diameter : 540 nm Pitch : 760 nm Diamond Holes in Diamond (HID) Pillars of Diamond (POD) POD with Electrooptic Polymer at Center 3D ...Diamond film : 2 um Si- substrate Al : 0.2 um PMMA : 0.5um 1. Deposit UNCD film 2. Deposit Al metal 3. Deposit PMMA on Al 4. E-beam Lithography 5...band-gap (PBG) based cavities. The cavities are etched directly on to the diamond substrate . The set of coupled qubits in each spot represents an

Do You Hear More Piano or Drum Sounds? An Auditory Version of the Solitaire Illusion.

PubMed

Prpic, Valter; Luccio, Riccardo

2016-10-03

The solitaire illusion is an illusion of numerosity proposed by Frith and Frith. In the original version, an apparent number of elements was determined by the spatial arrangement of two kinds of elements (black and white marbles). In our study, an auditory version of the solitaire illusion was demonstrated. Participants were asked to judge if they perceived more drum or piano sounds. When half of the piano tones were perceived as lower in pitch than a drum sound and the other half higher, piano tones appeared to be arranged in small units, leading to numerosity underestimation. Conversely, when all piano tones were perceived to be higher in pitch than the drum sounds, they appeared to be arranged in a single large unit, leading to numerosity overestimation. Comparable to the visual version of the solitaire illusion, the clustering seems to be determined by Gestalt principles. In our auditory version, a clear reversal of the illusion (numerosity overestimation or underestimation) was observed when piano tones appeared to be arranged in a single large cluster or in several small clusters, respectively. © The Author(s) 2016.

Wavelength stabilized DBR high power diode laser using EBL optical confining grating technology

NASA Astrophysics Data System (ADS)

Paoletti, R.; Codato, S.; Coriasso, C.; Gotta, P.; Meneghini, G.; Morello, G.; De Melchiorre, P.; Riva, E.; Rosso, M.; Stano, A.; Gattiglio, M.

2018-02-01

This paper reports a DBR High Power Diode Laser (DBR-HPDL) realization, emitting up to 10W in the 920 nm range. High spectral purity (90% power in about 0.5 nm), and wavelength stability versus injected current (about 5 times more than standard FP laser) candidates DBR-HPDL as a suitable device for wavelength stabilized pump source, and high brightness applications exploiting Wavelength Division Multiplexing. Key design aspect is a multiple-orders Electron Beam Lithography (EBL) optical confining grating, stabilizing on same wafer multiple wavelengths by a manufacturable and reliable technology. Present paper shows preliminary demonstration of wafer with 3 pitches, generating DBRHPDLs 2.5 nm spaced.

Periodically poled potassium niobate for second-harmonic generation at 463 nm.

PubMed

Meyn, J P; Klein, M E; Woll, D; Wallenstein, R; Rytz, D

1999-08-15

We report on the fabrication and characterization of quasi-phase-matched potassium niobate crystals for second-harmonic generation. Periodic 30-mum -pitch antiparallel ferroelectric domains are fabricated by means of poling in an electrical field. Both birefrigence and periodic phase shift of the generated second harmonic contribute to phase matching when the d(31) nonlinear optical tensor element is used. 3.8 mW of second-harmonic radiation at 463 nm is generated by frequency doubling of the output of master-oscillator power-amplifier diode laser in a 5-mm-long crystal. The measured effective nonlinear coefficient is 3.7pm/V. The measured spectral acceptance bandwidth of 0.25 nm corresponds to the theoretical value.

Dual Interlocked Logic for Single-Event Transient Mitigation

DTIC Science & Technology

2017-03-01

SPICE simulation and fault-injection analysis. Exemplar SPICE simulations have been performed in a 32nm partially- depleted silicon-on-insulator...in this work. The model has been validated at the 32nm SOI technology node with extensive heavy-ion data [7]. For the SPICE simulations, three

Efficient place and route enablement of 5-tracks standard-cells through EUV compatible N5 ruleset

NASA Astrophysics Data System (ADS)

Matti, L.; Gerousis, V.; Berekovic, M.; Debacker, P.; Sherazi, S. M. Y.; Milojevic, D.; Baert, R.; Ryckaert, J.; Kim, Ryoung-han; Verkest, Diederik; Raghavan, P.

2018-03-01

In imec predictive N5 technology platform (poly pitch 42nm, metal pitch 32nm), enabling cell height reduction from 6 to 5 tracks constitutes an interesting opportunity to reduce area of digital IP-blocks without increasing wafer cost. From a physical point of view, the two main challenges of reducing the number of tracks are posed by the increased difficulty of completing inter-cell connections in standard cell design, and by increased pin density that makes more challenging for the router to maintain high placement densities. Both these issues can potentially result into cell and chip area enlargement, thus mitigating or canceling the benefits of moving to 5-Tracks. In this study this side effect was avoided through a careful Design-Technology Co-Optimization approach (DTCO) [1], where a set of design arcs was used in conjunction with an EUV compatible ruleset that allowed efficient 5-Tracks standard cell design, resulting in final area gains up to 17% that were validated through a commercial state-of-the-art Place and Route (P&R) flow.

Advancements in high-power diode laser stacks for defense applications

NASA Astrophysics Data System (ADS)

Pandey, Rajiv; Merchen, David; Stapleton, Dean; Patterson, Steve; Kissel, Heiko; Fassbender, Wilhlem; Biesenbach, Jens

2012-06-01

This paper reports on the latest advancements in vertical high-power diode laser stacks using micro-channel coolers, which deliver the most compact footprint, power scalability and highest power/bar of any diode laser package. We present electro-optical (E-O) data on water-cooled stacks with wavelengths ranging from 7xx nm to 9xx nm and power levels of up to 5.8kW, delivered @ 200W/bar, CW mode, and a power-conversion efficiency of >60%, with both-axis collimation on a bar-to-bar pitch of 1.78mm. Also, presented is E-O data on a compact, conductively cooled, hardsoldered, stack package based on conventional CuW and AlN materials, with bar-to-bar pitch of 1.8mm, delivering average power/bar >15W operating up to 25% duty cycle, 10ms pulses @ 45C. The water-cooled stacks can be used as pump-sources for diode-pumped alkali lasers (DPALs) or for more traditional diode-pumped solid-state lasers (DPSSL). which are power/brightness scaled for directed energy weapons applications and the conductively-cooled stacks as illuminators.

Optimized ultra-thin manganin alloy passivated fine-pitch damascene compatible bump-less Cu-Cu bonding at sub 200 °C for three-dimensional Integration applications

NASA Astrophysics Data System (ADS)

Panigrahi, Asisa Kumar; Hemanth Kumar, C.; Bonam, Satish; Ghosh, Tamal; Rama Krishna Vanjari, Siva; Govind Singh, Shiv

2018-02-01

Enhanced Cu diffusion, Cu surface passivation, and smooth surface at the bonding interface are the key essentials for high quality Cu-Cu bonding. Previously, we have demonstrated optimized 3 nm thin Manganin metal-alloy passivation from oxidation and also helps to reduce the surface roughness to about 0.8 nm which substantially led to high quality Cu-Cu bonding. In this paper, we demonstrated an ultra fine-pitch (<25 µm) Cu-Cu bonding using an optimized Manganin metal-alloy passivation. This engineered surface passivation approach led to high quality bonding at sub 200 °C temperature and 0.4 MPa. Very low specific contact resistance of 1.4 × 10-7 Ω cm2 and the defect free bonded interface is clear indication of high quality bonding for future multilayer integrations. Furthermore, electrical characterization of the bonded structure was performed under various robust conditions as per International Technology Roadmap for Semiconductors (ITRS Roadmap) in order to satisfy the stability of the bonded structure.

Investigation of phonon coherence and backscattering using silicon nanomeshes

DOE PAGES

Lee, Jaeho; Lee, Woochul; Wehmeyer, Geoff; ...

2017-01-04

Phonons can display both wave-like and particle-like behaviour during thermal transport. While thermal transport in silicon nanomeshes has been previously interpreted by phonon wave effects due to interference with periodic structures, as well as phonon particle effects including backscattering, the dominant mechanism responsible for thermal conductivity reductions below classical predictions still remains unclear. Here we isolate the wave-related coherence effects by comparing periodic and aperiodic nanomeshes, and quantify the backscattering effect by comparing variable-pitch nanomeshes. We measure identical (within 6% uncertainty) thermal conductivities for periodic and aperiodic nanomeshes of the same average pitch, and reduced thermal conductivities for nanomeshes withmore » smaller pitches. Ray tracing simulations support the measurement results. We conclude phonon coherence is unimportant for thermal transport in silicon nanomeshes with periodicities of 100 nm and higher and temperatures above 14 K, and phonon backscattering, as manifested in the classical size effect, is responsible for the thermal conductivity reduction.« less

Expression and significance of CD44s, CD44v6, and nm23 mRNA in human cancer.

PubMed

Liu, Yong-Jun; Yan, Pei-Song; Li, Jun; Jia, Jing-Fen

2005-11-14

To investigate the relationship between the expression levels of nm23 mRNA, CD44s, and CD44v6, and oncogenesis, development and metastasis of human gastric adenocarcinoma, colorectal adenocarcinoma, intraductal carcinoma of breast, and lung cancer. Using tissue microarray by immuhistochemical (IHC) staining and in situ hybridization (ISH), we examined the expression levels of nm23 mRNA, CD44s, and CD44v6 in 62 specimens of human gastric adenocarcinoma and 62 specimens of colorectal adenocarcinoma; the expression of CD44s and CD44v6 in 120 specimens of intraductal carcinoma of breast and 20 specimens of normal breast tissue; the expression of nm23 mRNA in 72 specimens of human lung cancer and 23 specimens of normal tissue adjacent to cancer. The expression of nm23 mRNA in the tissues of gastric and colorectal adenocarcinoma was not significantly different from that in the normal tissues adjacent to cancer (P>0.05), and was not associated with the invasion of tumor and the pathology grade of adenocarcinoma (P>0.05). However, the expression of nm23 mRNA was correlated negatively to the lymph node metastasis of gastric and colorectal adenocarcinoma (r = -0.49, P<0.01; r = -4.93, P<0.01). The expression of CD44s in the tissues of gastric and colorectal adenocarcinoma was significantly different from that in the normal tissues adjacent to cancer (P<0.05; P<0.01). CD44v6 was expressed in the tissues of gastric and colorectal adenocarcinoma only, the expression of CD44v6 was significantly associated with the lymph node metastasis, invasion and pathological grade of the tumor (r = 0.47, P<0.01; r = 5.04, P<0.01). CD44s and CD44v6 were expressed in intraductal carcinoma of breast, the expression of CD44s and CD44v6 was significantly associated with lymph node metastases and invasion (P<0.01). However, neither of them was expressed in the normal breast tissue. In addition, the expression of CD44v6 was closely related to the degree of cell differentiation of intraductal carcinoma of breast (c2 = 5.68, P<0.05). The expressional level of nm23 mRNA was closely related to the degree of cell differentiation (P<0.05) and lymph node metastasis (P<0.01), but the expression of nm23 gene was not related to sex, age, and type of histological classification (P>0.05). Patients with overexpression of CD44s and CD44v6 and low expression of nm23 mRNA have a higher lymph node metastatic rate and invasion. In addition, overexpression of CD44v6 is closely related to the degree of cell differentiation. Detection of the three genes is able to provide a reliable index to evaluate the invasion and metastasis of tumor cells.

Spectral inputs and ocellar contributions to a pitch-sensitive descending neuron in the honeybee.

PubMed

Hung, Y-S; van Kleef, J P; Stange, G; Ibbotson, M R

2013-02-01

By measuring insect compensatory optomotor reflexes to visual motion, researchers have examined the computational mechanisms of the motion processing system. However, establishing the spectral sensitivity of the neural pathways that underlie this motion behavior has been difficult, and the contribution of the simple eyes (ocelli) has been rarely examined. In this study we investigate the spectral response properties and ocellar inputs of an anatomically identified descending neuron (DNII(2)) in the honeybee optomotor pathway. Using a panoramic stimulus, we show that it responds selectively to optic flow associated with pitch rotations. The neuron is also stimulated with a custom-built light-emitting diode array that presented moving bars that were either all-green (spectrum 500-600 nm, peak 530 nm) or all-short wavelength (spectrum 350-430 nm, peak 380 nm). Although the optomotor response is thought to be dominated by green-sensitive inputs, we show that DNII(2) is equally responsive to, and direction selective to, both green- and short-wavelength stimuli. The color of the background image also influences the spontaneous spiking behavior of the cell: a green background produces significantly higher spontaneous spiking rates. Stimulating the ocelli produces strong modulatory effects on DNII(2), significantly increasing the amplitude of its responses in the preferred motion direction and decreasing the response latency by adding a directional, short-latency response component. Our results suggest that the spectral sensitivity of the optomotor response in honeybees may be more complicated than previously thought and that ocelli play a significant role in shaping the timing of motion signals.

Electron Spin Coherence Times in Si/SiGe Quantum Dots

NASA Astrophysics Data System (ADS)

Jock, R. M.; He, Jianhua; Tyryshkin, A. M.; Lyon, S. A.; Lee, C.-H.; Huang, S.-H.; Liu, C. W.

2014-03-01

Single electron spin states in silicon have shown a great deal of promise as qubits due to their long spin relaxation (T1) and coherence (T2) times. Recent results exhibit a T2 of 250 us for electrons confined in Si/SiGe quantum dots at 350 mK. These experiments used conventional X-band (10 GHz) pulsed Electron Spin Resonance on a large area (3.5 mm x 20 mm), dual-gated, undoped Si/SiGe heterostructure quantum dots. These dots are induced in a natural Si quantum well by e-beam defined gates having a lithographic radius of 150 nm and pitch of 700 nm. The relatively large size of these dots led to closely spaced energy levels and long T2's could only be measured at sub-Kelvin temperatures. At 2K confined electrons displayed a 3 us T2, which is comparable to that of 2D electrons at that temperature. Decreasing the quantum dot size increases the electron confinement and reduces the effects of valley-splitting and spin-orbit coupling on the electron spin coherence times. We will report results on dots with 80 nm lithographic radii and a 375 nm pitch. This device displays an extended electron coherence time of 30 us at 2K, suggesting tighter confinement of electrons. Further measurements at lower temperatures are in progress. This work was supported in part by NSF through the Materials World Network program (DMR-1107606) and the Princeton MRSEC (DMR-0819860), and in part by the U.S. Army Research Office (W911NF-13-1-0179).

EDITORIAL: Extreme Ultraviolet Light Sources for Semiconductor Manufacturing

NASA Astrophysics Data System (ADS)

Attwood, David

2004-12-01

The International Technology Roadmap for Semiconductors (ITRS) [1] provides industry expectations for high volume computer chip fabrication a decade into the future. It provides expectations to anticipated performance and requisite specifications. While the roadmap provides a collective projection of what international industry expects to produce, it does not specify the technology that will be employed. Indeed, there are generally several competing technologies for each two or three year step forward—known as `nodes'. Recent successful technologies have been based on KrF (248 nm), and now ArF (193 nm) lasers, combined with ultraviolet transmissive refractive optics, in what are known as step and scan exposure tools. Less fortunate technologies in the recent past have included soft x-ray proximity printing and, it appears, 157 nm wavelength F2 lasers. In combination with higher numerical aperture liquid emersion optics, 193 nm is expected to be used for the manufacture of leading edge chip performance for the coming five years. Beyond that, starting in about 2009, the technology to be employed is less clear. The leading candidate for the 2009 node is extreme ultraviolet (EUV) lithography, however this requires that several remaining challenges, including sufficient EUV source power, be overcome in a timely manner. This technology is based on multilayer coated reflective optics [2] and an EUV emitting plasma. Following Moore's Law [3] it is expected, for example, that at the 2009 `32 nm node' (printable patterns of 32 nm half-pitch), isolated lines with 18 nm width will be formed in resist (using threshold effects), and that these will be further narrowed to 13 nm in transfer to metalized electronic gates. These narrow features are expected to provide computer chips of 19 GHz clock frequency, with of the order of 1.5 billion transistors per chip [1]. This issue of Journal of Physics D: Applied Physics contains a cluster of eight papers addressing the critical issue of available EUV power from electrical discharge pinch plasmas and laser produced plasmas, including the roots of these requirements, the relevant plasma and radiation physics, and current state-of-the-art commercial technology. In the first paper of the cluster, Vadim Banine and Roel Moors of ASML in the Netherlands provide a detailed review of the required EUV power based on an economically viable throughput of one hundred 300 mm diameter wafers per hour, projected resist sensitivity, number of finite reflectivity multilayer coated surfaces and their collective spectral bandwidth, and a collection solid angle set by optical phase-space constraints and plasma source size. Thomas Krücken and his colleagues from Philips and the Fraunhofer Institute in Aachen present a theoretical model of radiation generation and transport based on model density and temperature profiles in an electrical discharge plasma, providing valuable insights into radiation physics and the limits to achievable power. Kenneth Fahy and his colleagues at UCD in Dublin and NIST in the US, in their paper, describe in detail atomic physics calculations of emission from relevant lines and unresolved transition arrays (UTAs) of candidate xenon and tin ions, each of which radiate strongly within the acceptance bandwidth of the multilayer coatings. The different elements, Xe and Sn, however, raise significantly different implications for source debris production and thus of requisite debris mitigation requirements. Björn Hannson and Hans Hertz of KTH University in Stockholm present a substantial review of laser produced plasmas for the EUV, including those based on liquid jet technologies, leading to a path of mass limited target material, and significant stand-off distance from the solid nozzle, which maximize EUV power generation while minimizing debris production. In addition to an extensive review of EUV source related literature, they describe experiments with laser irradiated droplets and filaments, for both Xe and Sn. The embodiment of electrical discharge plasmas and laser-produced plasmas into commercially available EUV sources, with EUV powers that project to suitable levels, is presented in the fifth paper by Uwe Stamm of XTREME Technologies in Göttingen. For discharge produced plasmas, thermal loading and electrode erosion are significant issues. Vladimir Borisov and his colleagues, at the Troitsk Institute outside Moscow, address these issues and provide novel ideas for the multiplexing of several discharge plasmas feeding a single optical system. Igor Fomenkov and his colleagues at Cymer in San Diego describe issues associated with a dense plasma focus pinch, including a comparison of operations with both positive and negative polarity. In the eighth paper, Malcolm McGeoch of Plex in Massachusetts provides a theoretical description of the vaporization and ionization of spherical tin droplets in discharge plasma. Together this cluster of papers provides a broad review of the current status of high power EUV plasma sources for semiconductor manufacturing. This very current topic, of intense interest worldwide, is considered further in a book [4] of collected papers to become available in mid-2005. Additionally, a special journal issue emphasizing coherent EUV sources, albeit at lower average powers, is soon to appear [5]. References [1] http://public.itrsr.net [2] Attwood D 2000 Soft X-Rays and Extreme Ultraviolet Radiation: Principles and Applications (Cambridge: Cambridge University Press) www.coe.Berkeley.edu/AST/sxreuv [3] Moore G E 1965 Cramming More Components onto Integrated Circuits Electronics Magazine 114 Moore G E 1995 Lithography and the Future of Moore's Law SPIE 243 2 [4] Bakshi V ed 2005 EUV Sources for Lithography (Bellingham WA:SPIE) at press [5] IEEE J. Special Topics in Quantum Electronics, Short Wavelength and EUV Lasers 10 Dec 2004 at press

Closed Loop Real-Time Evaluation of Missile Guidance and Control Components: Simulator Hardware/Software Characteristics and Use

DTIC Science & Technology

1974-08-01

Node Control Logic 2-27 2.16 Pitch Channel Frequence Response 2-36 2.17 Yaw Channel Frequency Response 2-37 K 4 2.18 Analog Computer Mechanlzation of...8217S 0 121 £l1:c IL-I. TABLE I Elements of the Slgma 5 Digital Computer System Xerox Model- Performance MIOP Channel Description Number Characteristics...transfer control signals to or from the CPU. The MIOP can handle up to 32 I/0 channels each operating simultaneously, provided the overall data

Statcast and the Baseball Trajectory Calculator

ERIC Educational Resources Information Center

Kagan, David; Nathan, Alan M.

2017-01-01

Baseball's flirtation with technology began in 2005 when PITCHf/x® by Sportvision started to be installed in major league ballparks. Every stadium had the system operational by 2007. Since then, the trajectories of over six million pitches have been measured to within about half an inch using three 60-Hz video cameras to track the position of the…

Static Noise Margin Enhancement by Flex-Pass-Gate SRAM

NASA Astrophysics Data System (ADS)

O'Uchi, Shin-Ichi; Masahara, Meishoku; Sakamoto, Kunihiro; Endo, Kazuhiko; Liu, Yungxun; Matsukawa, Takashi; Sekigawa, Toshihiro; Koike, Hanpei; Suzuki, Eiichi

A Flex-Pass-Gate SRAM, i.e. a fin-type-field-effect-transistor- (FinFET-) based SRAM, is proposed to enhance noise margin during both read and write operations. In its cell, the flip-flop is composed of usual three-terminal- (3T-) FinFETs while pass gates are composed of four-terminal- (4T-) FinFETs. The 4T-FinFETs enable to adopt a dynamic threshold-voltage control in the pass gates. During a write operation, the threshold voltage of the pass gates is lowered to enhance the writing speed and stability. During the read operation, on the other hand, the threshold voltage is raised to enhance the static noise margin. An asymmetric-oxide 4T-FinFET is helpful to manage the leakage current through the pass gate. In this paper, a design strategy of the pass gate with an asymmetric gate oxide is considered, and a TCAD-based Monte Carlo simulation reveals that the Flex-Pass-Gate SRAM based on that design strategy is expected to be effective in half-pitch 32-nm technology for low-standby-power (LSTP) applications, even taking into account the variability in the device performance.

Firefly: an optical lithographic system for the fabrication of holographic security labels

NASA Astrophysics Data System (ADS)

Calderón, Jorge; Rincón, Oscar; Amézquita, Ricardo; Pulido, Iván.; Amézquita, Sebastián.; Bernal, Andrés.; Romero, Luis; Agudelo, Viviana

2016-03-01

This paper introduces Firefly, an optical lithography origination system that has been developed to produce holographic masters of high quality. This mask-less lithography system has a resolution of 418 nm half-pitch, and generates holographic masters with the optical characteristics required for security applications of level 1 (visual verification), level 2 (pocket reader verification) and level 3 (forensic verification). The holographic master constitutes the main core of the manufacturing process of security holographic labels used for the authentication of products and documents worldwide. Additionally, the Firefly is equipped with a software tool that allows for the hologram design from graphic formats stored in bitmaps. The software is capable of generating and configuring basic optical effects such as animation and color, as well as effects of high complexity such as Fresnel lenses, engraves and encrypted images, among others. The Firefly technology gathers together optical lithography, digital image processing and the most advanced control systems, making possible a competitive equipment that challenges the best technologies in the industry of holographic generation around the world. In this paper, a general description of the origination system is provided as well as some examples of its capabilities.

Local electric field direct writing – Electron-beam lithography and mechanism

DOE PAGES

Jiang, Nan; Su, Dong; Spence, John C. H.

2017-08-24

Local electric field induced by a focused electron probe in silicate glass thin films is evaluated in this paper by the migration of cations. Extremely strong local electric fields can be obtained by the focused electron probe from a scanning transmission electron microscope. As a result, collective atomic displacements occur. This newly revised mechanism provides an efficient tool to write patterned nanostructures directly, and thus overcome the low efficiency of the conventional electron-beam lithography. Applying this technique to silicate glass thin films, as an example, a grid of rods of nanometer dimension can be efficiently produced by rapidly scanning amore » focused electron probe. This nanopatterning is achieved through swift phase separation in the sample, without any post-development processes. The controlled phase separation is induced by massive displacements of cations (glass modifiers) within the glass-former network, driven by the strong local electric fields. The electric field is induced by accumulated charge within the electron probed region, which is generated by the excitation of atomic electrons by the incident electron. Throughput is much improved compared to other scanning probe techniques. Finally, the half-pitch spatial resolution of nanostructure in this particular specimen is 2.5 nm.« less

Local electric field direct writing – Electron-beam lithography and mechanism

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, Nan; Su, Dong; Spence, John C. H.

Local electric field induced by a focused electron probe in silicate glass thin films is evaluated in this paper by the migration of cations. Extremely strong local electric fields can be obtained by the focused electron probe from a scanning transmission electron microscope. As a result, collective atomic displacements occur. This newly revised mechanism provides an efficient tool to write patterned nanostructures directly, and thus overcome the low efficiency of the conventional electron-beam lithography. Applying this technique to silicate glass thin films, as an example, a grid of rods of nanometer dimension can be efficiently produced by rapidly scanning amore » focused electron probe. This nanopatterning is achieved through swift phase separation in the sample, without any post-development processes. The controlled phase separation is induced by massive displacements of cations (glass modifiers) within the glass-former network, driven by the strong local electric fields. The electric field is induced by accumulated charge within the electron probed region, which is generated by the excitation of atomic electrons by the incident electron. Throughput is much improved compared to other scanning probe techniques. Finally, the half-pitch spatial resolution of nanostructure in this particular specimen is 2.5 nm.« less

Pixel-super-resolved lensfree holography using adaptive relaxation factor and positional error correction

NASA Astrophysics Data System (ADS)

Zhang, Jialin; Chen, Qian; Sun, Jiasong; Li, Jiaji; Zuo, Chao

2018-01-01

Lensfree holography provides a new way to effectively bypass the intrinsical trade-off between the spatial resolution and field-of-view (FOV) of conventional lens-based microscopes. Unfortunately, due to the limited sensor pixel-size, unpredictable disturbance during image acquisition, and sub-optimum solution to the phase retrieval problem, typical lensfree microscopes only produce compromised imaging quality in terms of lateral resolution and signal-to-noise ratio (SNR). In this paper, we propose an adaptive pixel-super-resolved lensfree imaging (APLI) method to address the pixel aliasing problem by Z-scanning only, without resorting to subpixel shifting or beam-angle manipulation. Furthermore, an automatic positional error correction algorithm and adaptive relaxation strategy are introduced to enhance the robustness and SNR of reconstruction significantly. Based on APLI, we perform full-FOV reconstruction of a USAF resolution target across a wide imaging area of {29.85 mm2 and achieve half-pitch lateral resolution of 770 nm, surpassing 2.17 times of the theoretical Nyquist-Shannon sampling resolution limit imposed by the sensor pixel-size (1.67 μm). Full-FOV imaging result of a typical dicot root is also provided to demonstrate its promising potential applications in biologic imaging.

Nearly amorphous Mo-N gratings for ultimate resolution in extreme ultraviolet interference lithography.

PubMed

Wang, L; Kirk, E; Wäckerlin, C; Schneider, C W; Hojeij, M; Gobrecht, J; Ekinci, Y

2014-06-13

We present fabrication and characterization of high-resolution and nearly amorphous Mo1 - xNx transmission gratings and their use as masks for extreme ultraviolet (EUV) interference lithography. During sputter deposition of Mo, nitrogen is incorporated into the film by addition of N2 to the Ar sputter gas, leading to suppression of Mo grain growth and resulting in smooth and homogeneous thin films with a negligible grain size. The obtained Mo0.8N0.2 thin films, as determined by x-ray photoelectron spectroscopy, are characterized to be nearly amorphous using x-ray diffraction. We demonstrate a greatly reduced Mo0.8N0.2 grating line edge roughness compared with pure Mo grating structures after e-beam lithography and plasma dry etching. The amorphous Mo0.8N0.2 thin films retain, to a large extent, the benefits of Mo as a phase grating material for EUV wavelengths, providing great advantages for fabrication of highly efficient diffraction gratings with extremely low roughness. Using these grating masks, well-resolved dense lines down to 8 nm half-pitch are fabricated with EUV interference lithography.

Advanced process and defect characterization methodology to support process development of advanced patterning structures

NASA Astrophysics Data System (ADS)

Ketkar, Supriya; Lee, Junhan; Asokamani, Sen; Cho, Winston; Mishra, Shailendra

2018-03-01

This paper discusses the approach and solution adopted by GLOBALFOUNDRIES, a high volume manufacturing (HVM) foundry, for dry-etch related edge-signature surface particle defects issue facing the sub-nm node in the gate-etch sector. It is one of the highest die killers for the company in the 14-nm node. We have used different approaches to attack and rectify the edge signature surface particle defect. Several process-related & hardware changes have been successively implemented to achieve defect reduction improvement by 63%. Each systematic process and/or hardware approach has its own unique downstream issues and they have been dealt in a route-cause-effect technique to address the issue.

Evaluating diffraction based overlay metrology for double patterning technologies

NASA Astrophysics Data System (ADS)

Saravanan, Chandra Saru; Liu, Yongdong; Dasari, Prasad; Kritsun, Oleg; Volkman, Catherine; Acheta, Alden; La Fontaine, Bruno

2008-03-01

Demanding sub-45 nm node lithographic methodologies such as double patterning (DPT) pose significant challenges for overlay metrology. In this paper, we investigate scatterometry methods as an alternative approach to meet these stringent new metrology requirements. We used a spectroscopic diffraction-based overlay (DBO) measurement technique in which registration errors are extracted from specially designed diffraction targets for double patterning. The results of overlay measurements are compared to traditional bar-in-bar targets. A comparison between DBO measurements and CD-SEM measurements is done to show the correlation between the two approaches. We discuss the total measurement uncertainty (TMU) requirements for sub-45 nm nodes and compare TMU from the different overlay approaches.

Nanosatellite optical downlink experiment: design, simulation, and prototyping

NASA Astrophysics Data System (ADS)

Clements, Emily; Aniceto, Raichelle; Barnes, Derek; Caplan, David; Clark, James; Portillo, Iñigo del; Haughwout, Christian; Khatsenko, Maxim; Kingsbury, Ryan; Lee, Myron; Morgan, Rachel; Twichell, Jonathan; Riesing, Kathleen; Yoon, Hyosang; Ziegler, Caleb; Cahoy, Kerri

2016-11-01

The nanosatellite optical downlink experiment (NODE) implements a free-space optical communications (lasercom) capability on a CubeSat platform that can support low earth orbit (LEO) to ground downlink rates>10 Mbps. A primary goal of NODE is to leverage commercially available technologies to provide a scalable and cost-effective alternative to radio-frequency-based communications. The NODE transmitter uses a 200-mW 1550-nm master-oscillator power-amplifier design using power-efficient M-ary pulse position modulation. To facilitate pointing the 0.12-deg downlink beam, NODE augments spacecraft body pointing with a microelectromechanical fast steering mirror (FSM) and uses an 850-nm uplink beacon to an onboard CCD camera. The 30-cm aperture ground telescope uses an infrared camera and FSM for tracking to an avalanche photodiode detector-based receiver. Here, we describe our approach to transition prototype transmitter and receiver designs to a full end-to-end CubeSat-scale system. This includes link budget refinement, drive electronics miniaturization, packaging reduction, improvements to pointing and attitude estimation, implementation of modulation, coding, and interleaving, and ground station receiver design. We capture trades and technology development needs and outline plans for integrated system ground testing.

Current steering with partial tripolar stimulation mode in cochlear implants.

PubMed

Wu, Ching-Chih; Luo, Xin

2013-04-01

The large spread of excitation is a major cause of poor spectral resolution for cochlear implant (CI) users. Partial tripolar (pTP) mode has been proposed to reduce current spread by returning an equally distributed fraction (0.5 × σ) of current to two flanking electrodes and the rest to an extra-cochlear ground. This study tested the efficacy of incorporating current steering into pTP mode to add spectral channels. Different proportions of current [α × σ and (1 - α) × σ] were returned to the basal and apical flanking electrodes respectively to shape the electric field. Loudness and pitch perception with α from 0 to 1 in steps of 0.1 was simulated with a computational model of CI stimulation and tested on the apical, middle, and basal electrodes of six CI subjects. The highest σ allowing for full loudness growth within the implant compliance limit was chosen for each main electrode. Pitch ranking was measured between pairs of loudness-balanced steered pTP stimuli with an α interval of 0.1 at the most comfortable level. Results demonstrated that steered pTP stimuli with α around 0.5 required more current to achieve equal loudness than those with α around 0 or 1, maybe due to more focused excitation patterns. Subjects usually perceived decreasing pitches as α increased from 0 to 1, somewhat consistent with the apical shift of the center of gravity of excitation pattern in the model. Pitch discrimination was not better with α around 0.5 than with α around 0 or 1, except for some subjects and electrodes. For three subjects with better pitch discrimination, about half of the pitch ranges of two adjacent main electrodes overlapped with each other in steered pTP mode. These results suggest that current steering with focused pTP mode may improve spectral resolution and pitch perception with CIs.

Electric-field effects in the twist-bend nematic phase

NASA Astrophysics Data System (ADS)

Meyer, Claire; Dozov, Ivan; Davidson, Patrick; Luckhurst, Geoffrey R.; Dokli, Irena; Knezevic, Anamarija; Lesac, Andreja

2018-02-01

In the recently discovered Twist-Bend Nematic (NTB) phase, the nematic director is spontaneously distorted and twisted along a conical helix with an extremely short pitch, 10 nm. We have investigated the behavior of the NTB phase subject to an electric-field. We show that, due to the periodic NTB structure, the electro-optic effects are not nematic-like but are close analogs to those in the smectic and cholesteric phases. In particular, we have studied the fast (sub-microsecond) flexoelectrically-induced rotation of the optic axis, which is similar to the electroclinic effect in the SmA* phase and the flexoelectric response of short-pitch cholesterics. We discuss the possible applications of the fast NTB electro-optic effects.

High-Density Near-Field Optical Disc Recording

NASA Astrophysics Data System (ADS)

Shinoda, Masataka; Saito, Kimihiro; Ishimoto, Tsutomu; Kondo, Takao; Nakaoki, Ariyoshi; Ide, Naoki; Furuki, Motohiro; Takeda, Minoru; Akiyama, Yuji; Shimouma, Takashi; Yamamoto, Masanobu

2005-05-01

We developed a high-density near-field optical recording disc system using a solid immersion lens. The near-field optical pick-up consists of a solid immersion lens with a numerical aperture of 1.84. The laser wavelength for recording is 405 nm. In order to realize the near-field optical recording disc, we used a phase-change recording media and a molded polycarbonate substrate. A clear eye pattern of 112 GB capacity with 160 nm track pitch and 50 nm bit length was observed. The equivalent areal density is 80.6 Gbit/in2. The bottom bit error rate of 3 tracks-write was 4.5× 10-5. The readout power margin and the recording power margin were ± 30.4% and ± 11.2%, respectively.

Signal Characteristics of Super-Resolution Near-Field Structure Disks with 100 GB Capacity

NASA Astrophysics Data System (ADS)

Kim, Jooho; Hwang, Inoh; Kim, Hyunki; Park, Insik; Tominaga, Junji

2005-05-01

We report the basic characteristics of super resolution near-field structure (Super-RENS) media at a blue laser optical system (laser wavelength 405 nm, numerical aperture 0.85). Using a novel write once read many (WORM) structure for a blue laser system, we obtained a carrier-to-noise ratio (CNR) above 33 dB from the signal of the 37.5 nm mark length, which is equivalent to a 100 GB capacity with a 0.32 micrometer track pitch, and an eye pattern for 50 GB (2T: 75 nm) capacity using a patterned signal. Using a novel super-resolution material (tellurium, Te) with low super-resolution readout power, we also improved the read stability.

An improved method for characterizing photoresist lithographic and defectivity performance for sub-20nm node lithography

NASA Astrophysics Data System (ADS)

Amblard, Gilles; Purdy, Sara; Cooper, Ryan; Hockaday, Marjory

2016-03-01

The overall quality and processing capability of lithographic materials are critical for ensuring high device yield and performance at sub-20nm technology nodes in a high volume manufacturing environment. Insufficient process margin and high line width roughness (LWR) cause poor manufacturing control, while high defectivity causes product failures. In this paper, we focus on the most critical layer of a sub-20nm technology node LSI device, and present an improved method for characterizing both lithographic and post-patterning defectivity performance of state-of-the-art immersion photoresists. Multiple formulations from different suppliers were used and compared. Photoresists were tested under various process conditions, and multiple lithographic metrics were investigated (depth of focus, exposure dose latitude, line width roughness, etc.). Results were analyzed and combined using an innovative approach based on advanced software, providing clearer results than previously available. This increased detail enables more accurate performance comparisons among the different photoresists. Post-patterning defectivity was also quantified, with defects reviewed and classified using state-of-the-art inspection tools. Correlations were established between the lithographic and post-patterning defectivity performances for each material, and overall ranking was established among the photoresists, enabling the selection of the best performer for implementation in a high volume manufacturing environment.

IR luminescence of tellurium-doped silica-based optical fibre

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dianov, Evgenii M; Alyshev, S V; Shubin, Aleksei V

2012-03-31

Tellurium-doped germanosilicate fibre has been fabricated by the MCVD process. In contrast to Te-containing glasses studied earlier, it has a broad luminescence band (full width at half maximum of {approx}350 nm) centred at 1500 nm, with a lifetime of {approx}2 {mu}s. The luminescence of the fibre has been studied before and after gamma irradiation in a {sup 60}Co source to 309 and 992 kGy. The irradiation produced a luminescence band around 1100 nm, with a full width at half maximum of {approx}400 nm and lifetime of {approx}5 {mu}s. (letters)

An Extension of the Time-Spectral Method to Overset Solvers

NASA Technical Reports Server (NTRS)

Leffell, Joshua Isaac; Murman, Scott M.; Pulliam, Thomas

2013-01-01

Relative motion in the Cartesian or overset framework causes certain spatial nodes to move in and out of the physical domain as they are dynamically blanked by moving solid bodies. This poses a problem for the conventional Time-Spectral approach, which expands the solution at every spatial node into a Fourier series spanning the period of motion. The proposed extension to the Time-Spectral method treats unblanked nodes in the conventional manner but expands the solution at dynamically blanked nodes in a basis of barycentric rational polynomials spanning partitions of contiguously defined temporal intervals. Rational polynomials avoid Runge's phenomenon on the equidistant time samples of these sub-periodic intervals. Fourier- and rational polynomial-based differentiation operators are used in tandem to provide a consistent hybrid Time-Spectral overset scheme capable of handling relative motion. The hybrid scheme is tested with a linear model problem and implemented within NASA's OVERFLOW Reynolds-averaged Navier- Stokes (RANS) solver. The hybrid Time-Spectral solver is then applied to inviscid and turbulent RANS cases of plunging and pitching airfoils and compared to time-accurate and experimental data. A limiter was applied in the turbulent case to avoid undershoots in the undamped turbulent eddy viscosity while maintaining accuracy. The hybrid scheme matches the performance of the conventional Time-Spectral method and converges to the time-accurate results with increased temporal resolution.

Unsteady lift and thrust of a 2D flapping thin airfoil in the presence of additional leading edge vortices

NASA Astrophysics Data System (ADS)

Alaminos-Quesada, Javier; Fernandez-Feria, Ramon

2017-11-01

The effect of leading-edge vortices (LEVs) on the lift, thrust and moment of a two-dimensional heaving and pitching foil is analyzed from the unsteady, linear potential theory. General expressions taking into account the effect of unsteady point vortices interacting with the oscillatory trailing wake are first derived. Then, simplified expressions for the initial stages of the growing LEV on each half-stroke are used to obtain analytical closed expressions for the main contribution of these vortices to the lift, thrust and moment. It is found that, within the linear potential framework and the Brown-Michael model, the LEV contributes to the aerodynamic forces and moment only for combined pitching and heaving motions of the foil, being a relevant contribution for sufficiently large values of the product of the reduced frequency and the amplitude of the heaving and/or pitching motions. The results are compared with available experimental data and numerical simulations. Supported by the Ministerio de Economia y Competitividad of Spain Grants No. DPI2013-40479-P and DPI2016-76151-C2-1-R.

Flow visualization around a rotating body in a wind tunnel

NASA Astrophysics Data System (ADS)

Hiraki, K.; Zaitsu, D.; Yanaga, Y.; Kleine, H.

2017-02-01

The rotational behavior of capsule-shaped models is investigated in the transonic wind tunnel of JAXA. A special support is developed to allow the model to rotate around the pitch, yaw and roll axes. This 3-DOF free rotational mounting apparatus achieves the least frictional torque from the support and the instruments. Two types of capsule models are prepared, one is drag type (SPH model) and the other is lift type (HTV-R model). The developed mounting apparatus is used in the wind tunnel tests with these capsule models. In a flow of Mach 0.9, the SPH model exhibits oscillations in pitch and yaw, and it rolls half a turn during the test. Similarly, the HTV-R model exhibits pitch and yaw oscillations in a flow of Mach 0.5. Moreover, it rolls multiple times during the test. In order to investigate the flow field around the capsule, the combined technique of color schlieren and surface tufts is applied. This visualization clearly shows the flow reattachment on the back surface of a capsule, which is suspected to induce the rapid rolling motion.

The effects of prepulse-blink reflex trial repetition and prepulse change on blink reflex modification at short and long lead intervals.

PubMed

Lipp, O V; Siddle, D A

1998-01-01

Prepulse inhibition and facilitation of the blink reflex are said to reflect different responses elicited by the lead stimulus, transient detection and orienting response respectively. Two experiments investigated the effects of trial repetition and lead stimulus change on blink modification. It was hypothesized that these manipulations will affect orienting and thus blink facilitation to a greater extent than they will affect transient detection and thus blink inhibition. In Experiment 1 (N = 64), subjects were trained with a sequence of 12 lead stimulus and 12 blink stimulus alone presentations, and 24 lead stimulus-blink stimulus pairings. Lead interval was 120 ms for 12 of the trials and 2000 ms for the other 12. For half the subjects this sequence was followed by a change in pitch of the lead stimulus. In Experiment 2 (N = 64), subjects were trained with a sequence of 36 blink alone stimuli and 36 lead stimulus-blink stimulus pairings. The lead interval was 120 ms for half the subjects and 2000 ms for the other half. The pitch of the lead stimulus on prestimulus trials 31-33 was changed for half the subjects in each group. In both experiments, the amount of blink inhibition decreased during training whereas the amount of blink facilitation remained unchanged. Lead stimulus change had no effect on blink modification in either experiment although it resulted in enhanced skin conductance responses and greater heart rate deceleration in Experiment 2. The present results are not consistent with the notion that blink facilitation is linked to orienting whereas blink inhibition reflects a transient detection mechanism.

High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes

NASA Astrophysics Data System (ADS)

Han, Shu-Jen; Tang, Jianshi; Kumar, Bharat; Falk, Abram; Farmer, Damon; Tulevski, George; Jenkins, Keith; Afzali, Ali; Oida, Satoshi; Ott, John; Hannon, James; Haensch, Wilfried

2017-09-01

As conventional monolithic silicon technology struggles to meet the requirements for the 7-nm technology node, there has been tremendous progress in demonstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies the 3-nm node and beyond. However, to date, circuits built with carbon nanotubes have overlooked key aspects of a practical logic technology and have stalled at simple functionality demonstrations. Here, we report high-performance complementary carbon nanotube ring oscillators using fully manufacturable processes, with a stage switching frequency of 2.82 GHz. The circuit was built on solution-processed, self-assembled carbon nanotube arrays with over 99.9% semiconducting purity, and the complementary feature was achieved by employing two different work function electrodes.

Application of resist-profile-aware source optimization in 28 nm full chip optical proximity correction

NASA Astrophysics Data System (ADS)

Zhu, Jun; Zhang, David Wei; Kuo, Chinte; Wang, Qing; Wei, Fang; Zhang, Chenming; Chen, Han; He, Daquan; Hsu, Stephen D.

2017-07-01

As technology node shrinks, aggressive design rules for contact and other back end of line (BEOL) layers continue to drive the need for more effective full chip patterning optimization. Resist top loss is one of the major challenges for 28 nm and below technology nodes, which can lead to post-etch hotspots that are difficult to predict and eventually degrade the process window significantly. To tackle this problem, we used an advanced programmable illuminator (FlexRay) and Tachyon SMO (Source Mask Optimization) platform to make resistaware source optimization possible, and it is proved to greatly improve the imaging contrast, enhance focus and exposure latitude, and minimize resist top loss thus improving the yield.

High-speed logic integrated circuits with solution-processed self-assembled carbon nanotubes.

PubMed

Han, Shu-Jen; Tang, Jianshi; Kumar, Bharat; Falk, Abram; Farmer, Damon; Tulevski, George; Jenkins, Keith; Afzali, Ali; Oida, Satoshi; Ott, John; Hannon, James; Haensch, Wilfried

2017-09-01

As conventional monolithic silicon technology struggles to meet the requirements for the 7-nm technology node, there has been tremendous progress in demonstrating the scalability of carbon nanotube field-effect transistors down to the size that satisfies the 3-nm node and beyond. However, to date, circuits built with carbon nanotubes have overlooked key aspects of a practical logic technology and have stalled at simple functionality demonstrations. Here, we report high-performance complementary carbon nanotube ring oscillators using fully manufacturable processes, with a stage switching frequency of 2.82 GHz. The circuit was built on solution-processed, self-assembled carbon nanotube arrays with over 99.9% semiconducting purity, and the complementary feature was achieved by employing two different work function electrodes.

Axial rotation of sliding actin filaments revealed by single-fluorophore imaging

PubMed Central

Sase, Ichiro; Miyata, Hidetake; Ishiwata, Shin’ichi; Kinosita, Kazuhiko

1997-01-01

In the actomyosin motor, myosin slides along an actin filament that has a helical structure with a pitch of ≈72 nm. Whether myosin precisely follows this helical track is an unanswered question bearing directly on the motor mechanism. Here, axial rotation of actin filaments sliding over myosin molecules fixed on a glass surface was visualized through fluorescence polarization imaging of individual tetramethylrhodamine fluorophores sparsely bound to the filaments. The filaments underwent one revolution per sliding distance of ≈1 μm, which is much greater than the 72 nm pitch. Thus, myosin does not “walk” on the helical array of actin protomers; rather it “runs,” skipping many protomers. Possible mechanisms involving sequential interaction of myosin with successive actin protomers are ruled out at least for the preparation described here in which the actin filaments ran rather slowly compared with other in vitro systems. The result also indicates that each “kick” of myosin is primarily along the axis of the actin filament. The successful, real-time observation of the changes in the orientation of a single fluorophore opens the possibility of detecting a conformational change(s) of a single protein molecule at the moment it functions. PMID:9159126

Axial rotation of sliding actin filaments revealed by single-fluorophore imaging.

PubMed

Sase, I; Miyata, H; Ishiwata, S; Kinosita, K

1997-05-27

In the actomyosin motor, myosin slides along an actin filament that has a helical structure with a pitch of approximately 72 nm. Whether myosin precisely follows this helical track is an unanswered question bearing directly on the motor mechanism. Here, axial rotation of actin filaments sliding over myosin molecules fixed on a glass surface was visualized through fluorescence polarization imaging of individual tetramethylrhodamine fluorophores sparsely bound to the filaments. The filaments underwent one revolution per sliding distance of approximately 1 microm, which is much greater than the 72 nm pitch. Thus, myosin does not "walk" on the helical array of actin protomers; rather it "runs," skipping many protomers. Possible mechanisms involving sequential interaction of myosin with successive actin protomers are ruled out at least for the preparation described here in which the actin filaments ran rather slowly compared with other in vitro systems. The result also indicates that each "kick" of myosin is primarily along the axis of the actin filament. The successful, real-time observation of the changes in the orientation of a single fluorophore opens the possibility of detecting a conformational change(s) of a single protein molecule at the moment it functions.

Design principles for morphologies of antireflection patterns for solar absorbing applications.

PubMed

Moon, Yoon-Jong; Na, Jin-Young; Kim, Sun-Kyung

2015-07-01

Two-dimensional surface texturing is a widespread technology for imparting broadband antireflection, yet its design rules are not completely understood. The dependence of the reflectance spectrum of a periodically patterned glass film on various structural parameters (e.g., pitch, height, shape, and fill factor) has been investigated by means of full-vectorial numerical simulations. An average weighted reflectivity accounting for the AM1.5G solar spectrum (λ=300-1000  nm) was sinusoidally modulated by a rod pattern's height, and was minimized for pitches of 400-600 nm. When a rationally optimized cone pattern was used, the average weighted reflectivity was less than 0.5%, for incident angles of up to 40° off normal. The broadband antireflection of a cone pattern was reproduced well by a graded refractive index film model corresponding to its geometry, with the addition of a diffraction effect resulting from its periodicity. The broadband antireflection ability of optimized cone patterns is not limited to the glass material, but rather is generically applicable to other semiconductor materials, including Si and GaAs. The design rules developed herein represent a key step in the development of light-absorbing devices, such as solar cells.

The SIRIUS mixed analog-digital ASIC developed for the LOFT LAD and WFM instruments

NASA Astrophysics Data System (ADS)

Cros, A.; Rambaud, D.; Moutaye, E.; Ravera, L.; Barret, D.; Caïs, P.; Clédassou, R.; Bodin, P.; Seyler, J. Y.; Bonzo, A.; Feroci, M.; Labanti, C.; Evangelista, Y.; Favre, Y.

2014-07-01

We report on the development and characterization of the low-noise, low power, mixed analog-digital SIRIUS ASICs for both the LAD and WFM X-ray instruments of LOFT. The ASICs we developed are reading out large area silicon drift detectors (SDD). Stringent requirements in terms of noise (ENC of 17 e- to achieve an energy resolution on the LAD of 200 eV FWHM at 6 keV) and power consumption (650 μW per channel) were basis for the ASICs design. These SIRIUS ASICs are developed to match SDD detectors characteristics: 16 channels ASICs adapted for the LAD (970 microns pitch) and 64 channels for the WFM (145 microns pitch) will be fabricated. The ASICs were developed with the 180nm mixed technology of TSMC.

Looking into the crystal ball: future device learning using hybrid e-beam and optical lithography (Keynote Paper)

NASA Astrophysics Data System (ADS)

Steen, S. E.; McNab, S. J.; Sekaric, L.; Babich, I.; Patel, J.; Bucchignano, J.; Rooks, M.; Fried, D. M.; Topol, A. W.; Brancaccio, J. R.; Yu, R.; Hergenrother, J. M.; Doyle, J. P.; Nunes, R.; Viswanathan, R. G.; Purushothaman, S.; Rothwell, M. B.

2005-05-01

Semiconductor process development teams are faced with increasing process and integration complexity while the time between lithographic capability and volume production has remained more or less constant over the last decade. Lithography tools have often gated the volume checkpoint of a new device node on the ITRS roadmap. The processes have to be redeveloped after the tooling capability for the new groundrule is obtained since straight scaling is no longer sufficient. In certain cases the time window that the process development teams have is actually decreasing. In the extreme, some forecasts are showing that by the time the 45nm technology node is scheduled for volume production, the tooling vendors will just begin shipping the tools required for this technology node. To address this time pressure, IBM has implemented a hybrid-lithography strategy that marries the advantages of optical lithography (high throughput) with electron beam direct write lithography (high resolution and alignment capability). This hybrid-lithography scheme allows for the timely development of semiconductor processes for the 32nm node, and beyond. In this paper we will describe how hybrid lithography has enabled early process integration and device learning and how IBM applied e-beam & optical hybrid lithography to create the world's smallest working SRAM cell.

Portable widefield imaging device for ICG-detection of the sentinel lymph node

NASA Astrophysics Data System (ADS)

Govone, Angelo Biasi; Gómez-García, Pablo Aurelio; Carvalho, André Lopes; Capuzzo, Renato de Castro; Magalhães, Daniel Varela; Kurachi, Cristina

2015-06-01

Metastasis is one of the major cancer complications, since the malignant cells detach from the primary tumor and reaches other organs or tissues. The sentinel lymph node (SLN) is the first lymphatic structure to be affected by the malignant cells, but its location is still a great challenge for the medical team. This occurs due to the fact that the lymph nodes are located between the muscle fibers, making it visualization difficult. Seeking to aid the surgeon in the detection of the SLN, the present study aims to develop a widefield fluorescence imaging device using the indocyanine green as fluorescence marker. The system is basically composed of a 780nm illumination unit, optical components for 810nm fluorescence detection, two CCD cameras, a laptop, and dedicated software. The illumination unit has 16 diode lasers. A dichroic mirror and bandpass filters select and deliver the excitation light to the interrogated tissue, and select and deliver the fluorescence light to the camera. One camera is responsible for the acquisition of visible light and the other one for the acquisition of the ICG fluorescence. The software developed at the LabVIEW® platform generates a real time merged image where it is possible to observe the fluorescence spots, related to the lymph nodes, superimposed at the image under white light. The system was tested in a mice model, and a first patient with tongue cancer was imaged. Both results showed the potential use of the presented fluorescence imaging system assembled for sentinel lymph node detection.

Physical resist models and their calibration: their readiness for accurate EUV lithography simulation

NASA Astrophysics Data System (ADS)

Klostermann, U. K.; Mülders, T.; Schmöller, T.; Lorusso, G. F.; Hendrickx, E.

2010-04-01

In this paper, we discuss the performance of EUV resist models in terms of predictive accuracy, and we assess the readiness of the corresponding model calibration methodology. The study is done on an extensive OPC data set collected at IMEC for the ShinEtsu resist SEVR-59 on the ASML EUV Alpha Demo Tool (ADT), with the data set including more than thousand CD values. We address practical aspects such as the speed of calibration and selection of calibration patterns. The model is calibrated on 12 process window data series varying in pattern width (32, 36, 40 nm), orientation (H, V) and pitch (dense, isolated). The minimum measured feature size at nominal process condition is a 32 nm CD at a dense pitch of 64 nm. Mask metrology is applied to verify and eventually correct nominal width of the drawn CD. Cross-sectional SEM information is included in the calibration to tune the simulated resist loss and sidewall angle. The achieved calibration RMS is ~ 1.0 nm. We show what elements are important to obtain a well calibrated model. We discuss the impact of 3D mask effects on the Bossung tilt. We demonstrate that a correct representation of the flare level during the calibration is important to achieve a high predictability at various flare conditions. Although the model calibration is performed on a limited subset of the measurement data (one dimensional structures only), its accuracy is validated based on a large number of OPC patterns (at nominal dose and focus conditions) not included in the calibration; validation RMS results as small as 1 nm can be reached. Furthermore, we study the model's extendibility to two-dimensional end of line (EOL) structures. Finally, we correlate the experimentally observed fingerprint of the CD uniformity to a model, where EUV tool specific signatures are taken into account.

Cognitive Models for Learning to Control Dynamic Systems

DTIC Science & Technology

2008-05-30

2 3N NM NM NMK NK M− + + + + constraints, including KN M+ equality constraints, 7 2NM M+ inequality non- timing constraints and the rest are... inequality timing constraints. The size of the MILP model grows rapidly with the increase of problem size. So it is a big challenge to deal with more...task requirement, are studied in the section. An assumption is made in advance that the time of attack delay and flight time to the sink node are

A rodent model for artificial gravity: VOR adaptation and Fos expression.

PubMed

Kaufman, Galen; Weng, Tianxiang; Ruttley, Tara

2005-01-01

Vestibulo-ocular reflex (VOR) adaptation and brainstem Fos expression as a result of short radius cross-coupling stimuli were investigated to find neural correlates of the inherent Coriolis force asymmetry from an artificial gravity (AG) environment. Head-fixed gerbils (Meriones unguiculatus, N=79) were exposed, in the dark, to 60--90 minutes of cross-coupled rotations, combinations of pitch (or roll) and yaw rotation, while binocular horizontal, vertical, and torsional eye position were determined using infrared video-oculography. Centripetal acceleration in combination with angular cross-coupling was also studied. Simultaneous sinusoidal rotations in two planes (yaw with roll or pitch) provided a net symmetrical stimulus for the right and left labyrinths. In contrast, a constant velocity yaw rotation during sinusoidal roll or pitch provided the asymmetric stimulus model for AG. We found orthogonally oriented half-cycle VOR gain changes. The results depended on the direction of horizontal rotation during asymmetrical cross-coupling, and other aspects of the stimulus, including the phase relationship between the two rotational inputs, the symmetry of the stimulus, and training. Fos expression also revealed laterality differences in the prepositus and inferior olivary C subnucleus. In contrast the inferior olivary beta and ventrolateral outgrowth were labeled bilaterally. Additional cross-coupling dependent labeling was found in the flocculus, hippocampus, and several cortical regions, including the perirhinal and temporal association cortices. Analyses showed significant differences across the brain regions for several factors (symmetry, rotation velocity and direction, the presence of centripetal acceleration or a visual surround, and training). Finally, animals compensating from a unilateral surgical labyrinthectomy who received multiple cross-coupling training sessions had improved half-cycle VOR gain in the ipsilateral eye with head rotation toward the intact side. We hypothesize that cross-coupling vestibular training can benefit aspects of motor recovery or performance.

Electron beam mask writer EBM-9500 for logic 7nm node generation

NASA Astrophysics Data System (ADS)

Matsui, Hideki; Kamikubo, Takashi; Nakahashi, Satoshi; Nomura, Haruyuki; Nakayamada, Noriaki; Suganuma, Mizuna; Kato, Yasuo; Yashima, Jun; Katsap, Victor; Saito, Kenichi; Kobayashi, Ryoei; Miyamoto, Nobuo; Ogasawara, Munehiro

2016-10-01

Semiconductor scaling is slowing down because of difficulties of device manufacturing below logic 7nm node generation. Various lithography candidates which include ArF immersion with resolution enhancement technology (like Inversed Lithography technology), Extreme Ultra Violet lithography and Nano Imprint lithography are being developed to address the situation. In such advanced lithography, shot counts of mask patterns are estimated to increase explosively in critical layers, and then it is hoped that multi beam mask writer (MBMW) is released to handle them within realistic write time. However, ArF immersion technology with multiple patterning will continue to be a mainstream lithography solution for most of the layers. Then, the shot counts in less critical layers are estimated to be stable because of the limitation of resolution in ArF immersion technology. Therefore, single beam mask writer (SBMW) can play an important role for mask production still, relative to MBMW. Also the demand of SBMW seems actually strong for the logic 7nm node. To realize this, we have developed a new SBMW, EBM-9500 for mask fabrication in this generation. A newly introduced electron beam source enables higher current density of 1200A/cm2. Heating effect correction function has also been newly introduced to satisfy the requirements for both pattern accuracy and throughput. In this paper, we will report the configuration and performance of EBM-9500.

Range pattern matching with layer operations and continuous refinements

NASA Astrophysics Data System (ADS)

Tseng, I.-Lun; Lee, Zhao Chuan; Li, Yongfu; Perez, Valerio; Tripathi, Vikas; Ong, Jonathan Yoong Seang

2018-03-01

At advanced and mainstream process nodes (e.g., 7nm, 14nm, 22nm, and 55nm process nodes), lithography hotspots can exist in layouts of integrated circuits even if the layouts pass design rule checking (DRC). Existence of lithography hotspots in a layout can cause manufacturability issues, which can result in yield losses of manufactured integrated circuits. In order to detect lithography hotspots existing in physical layouts, pattern matching (PM) algorithms and commercial PM tools have been developed. However, there are still needs to use DRC tools to perform PM operations. In this paper, we propose a PM synthesis methodology, which uses a continuous refinement technique, for the automatic synthesis of a given lithography hotspot pattern into a DRC deck, which consists of layer operation commands, so that an equivalent PM operation can be performed by executing the synthesized deck with the use of a DRC tool. Note that the proposed methodology can deal with not only exact patterns, but also range patterns. Also, lithography hotspot patterns containing multiple layers can be processed. Experimental results show that the proposed methodology can accurately and efficiently detect lithography hotspots in physical layouts.

[Study on genetic instability of nm23H1 gene in Chinese with original gallbladder tumor].

PubMed

Lu, Hai Ying; Zhang, Guo Qiang; Li, Ji Cheng

2006-06-01

The aim of this study was to examine the microsatellite instability (MSI) and loss of heterozygosity (LOH) of locus D17S396 on chromosome 17 and their influence on the expression of nm23H1 in gallbladder tumors, which may provide experimental basis for the tumor occurrence and metastasis. Techniques such as DNA extraction from formalin-fixed paraffin-embedded tissues, polymerase chain reaction-single strand conformation polymorphism (PCR-SSCP), ordinary silver stain were used to study MSI and LOH of locus D17S396. Envision immunohistochemistry and Leica-Qwin computer imaging techniques were used to assess the expression of gene nm23H1. In our experiment, the frequency of genetic instability of malignant gallbladder tumors was 42.55%, which was higher than that of gallbladder adenomas, while there were no genetic instability occurred in chronic cholecystitis tissue. The frequency of LOH seemed higher with the deteriorism of gallbladder tumor. Among 47 gallbladder carcinomas, the frequency of LOH and MSI were different between different differentiation cases (P < 0.05), and the frequency of LOH in liver and lymph node metastasis cases was significantly higher than those without metastasis (P < 0.01). Moreover, the frequency of LOH was higher in stage Nevin IV and V when compared with stage I, II and III. However, the frequency of MSI showed contrary correlation with some clinicopathologic characteristics. The expression of nm23H1 in gallbladder carcinoma, gallbladder adenoma and chronic cholecystitis tissue were different (P < 0.05). The case with lymph node metastasis showed significantly lower nm23H1 expression than those without lymph node metastasis (P < 0.01). Nevin stage IV and V also exhibited lower nm23H1 expression levels compared with stage I, II and Ill. Furthermore, there was no difference in nm23H1 protein expression intensity analyzed by computer imaging techniques. In gallbladder carcinomas, the positive frequency of nm23H1 protein in LOH positive group was lower than that of LOH negative group (P < 0.05). The results indicated that the genetic instability of nm23H1 gene might be implicated in pathogenesis and progression of gallbladder tumor. Both MSI and LOH of nm23H1 gene controlled the development of gallbladder tumor independently in different paths. MSI may be an early stage molecule marker of gallbladder carcinoma. LOH may be molecule marker for the deteriorism of gallbladder tissue, which could inhibit the expression of nm23H1 in local tissue of gallbladder carcinoma and endow it with high aggressive and poor prognosis. Increasing the amount of nm23H1 protein expression could effectively restrain gallbladder carcinoma metastasis and improve prognosis of patients.

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCarroll, R; Rubinstein, A; Kingsley, C

Purpose: New small-animal irradiators include extremely precise IGRT capabilities. However, mouse immobilization and localization remains a challenge. In particular, unlike week-to-week translational displacements, rotational changes in positioning are not easily corrected for in subject setup. Using two methods of setup, we aim to quantify week-to-week rotational variation in mice for the purpose of IGRT planning in small animal studies. Methods: Ten mice were imaged weekly using breath-hold CBCT (X-RAD 225 Cx), with the mouse positioned in a half-pipe support, providing 40 scans. A second group of two mice were positioned in a 3D printed immobilization device, which was created usingmore » a CT from a similarly shaped mouse, providing 10 scans. For each mouse, the first image was taken to be the reference image. Subsequent CT images were then rigidly registered, based on bony anatomy. Rotations in the axial (roll), sagittal (pitch), and coronal (yaw) planes were recorded and used to quantify variation in angular setup. Results: For the mice imaged in the half pipe, average magnitude of roll was found to be 5.4±4.6° (range: −12.9:18.86°), of pitch 1.6±1.3° (range: −1.4:4.7°), and of yaw 1.9±1.5° (range −5.4:1.1°). For the mice imaged in the printed setup; average magnitude of roll was found to be 0.64±0.6° (range: −2.1:1.0°), of pitch 0.6±0.4° (range: 0.0:1.3°), and of yaw 0.2±0.1° (range: 0.0:0.4°). The printed setup provided reduction in roll, pitch, and yaw by 88, 62, and 90 percent, respectively. Conclusion: For the typical setup routine, roll in mouse position is the dominant source of rotational variation. However, when a printed device was used, drastic improvements in mouse immobilization were seen. This work provides a promising foundation for mouse immobilization, required for full scale small animal IGRT. Currently, we are making improvements to allo±w the use of a similar system for MR, PET, and bioluminescence.« less

Primary adenocarcinoma of bladder.

PubMed

Wilson, T G; Pritchett, T R; Lieskovsky, G; Warner, N E; Skinner, D G

1991-09-01

Between April 1983 and December 1987, we have treated and followed 16 patients at the University of Southern California for adenocarcinoma of the bladder. In 10 patients, the cancer originated from a nonurachal source; all underwent radical cystectomy, bilateral pelvic lymph node dissection, and urinary diversion. The other 6 patients had an apparent urachal origin of their cancer. Half of these patients were treated with radical cystectomy and urinary diversion and half were treated initially with segmental cystectomy. Presenting characteristics (age, sex ratio, and symptoms) were similar for both groups. Three-year adjusted acturial tumor-free survival rates for the two groups were 48 percent and 31 percent, respectively. We advocate an aggressive approach of radical cystectomy, bilateral pelvic lymph node dissection, and urinary diversion for all invasive adenocarcinoma of the bladder, regardless of location.

Precision process calibration and CD predictions for low-k1 lithography

NASA Astrophysics Data System (ADS)

Chen, Ting; Park, Sangbong; Berger, Gabriel; Coskun, Tamer H.; de Vocht, Joep; Chen, Fung; Yu, Linda; Hsu, Stephen; van den Broeke, Doug; Socha, Robert; Park, Jungchul; Gronlund, Keith; Davis, Todd; Plachecki, Vince; Harris, Tom; Hansen, Steve; Lambson, Chuck

2005-06-01

Leading resist calibration for sub-0.3 k1 lithography demands accuracy <2nm for CD through pitch. An accurately calibrated resist process is the prerequisite for establishing production-worthy manufacturing under extreme low k1. From an integrated imaging point of view, the following key components must be simultaneously considered during the calibration - high numerical aperture (NA>0.8) imaging characteristics, customized illuminations (measured vs. modeled pupil profiles), resolution enhancement technology (RET) mask with OPC, reticle metrology, and resist thin film substrate. For imaging at NA approaching unity, polarized illumination can impact significantly the contrast formation in the resist film stack, and therefore it is an important factor to consider in the CD-based resist calibration. For aggressive DRAM memory core designs at k1<0.3, pattern-specific illumination optimization has proven to be critical for achieving the required imaging performance. Various optimization techniques from source profile optimization with fixed mask design to the combined source and mask optimization have been considered for customer designs and available imaging capabilities. For successful low-k1 process development, verification of the optimization results can only be made with a sufficiently tunable resist model that can predicate the wafer printing accurately under various optimized process settings. We have developed, for resist patterning under aggressive low-k1 conditions, a novel 3D diffusion model equipped with double-Gaussian convolution in each dimension. Resist calibration with the new diffusion model has demonstrated a fitness and CD predication accuracy that rival or outperform the traditional 3D physical resist models. In this work, we describe our empirical approach to achieving the nm-scale precision for advanced lithography process calibrations, using either measured 1D CD through-pitch or 2D memory core patterns. We show that for ArF imaging, the current resist development and diffusion modeling can readily achieve ~1-2nm max CD errors for common 1D through-pitch and aggressive 2D memory core resist patterns. Sensitivities of the calibrated models to various process parameters are analyzed, including the comparison between the measured and modeled (Gaussian or GRAIL) pupil profiles. We also report our preliminary calibration results under selected polarized illumination conditions.

Exact sampling of graphs with prescribed degree correlations

NASA Astrophysics Data System (ADS)

Bassler, Kevin E.; Del Genio, Charo I.; Erdős, Péter L.; Miklós, István; Toroczkai, Zoltán

2015-08-01

Many real-world networks exhibit correlations between the node degrees. For instance, in social networks nodes tend to connect to nodes of similar degree and conversely, in biological and technological networks, high-degree nodes tend to be linked with low-degree nodes. Degree correlations also affect the dynamics of processes supported by a network structure, such as the spread of opinions or epidemics. The proper modelling of these systems, i.e., without uncontrolled biases, requires the sampling of networks with a specified set of constraints. We present a solution to the sampling problem when the constraints imposed are the degree correlations. In particular, we develop an exact method to construct and sample graphs with a specified joint-degree matrix, which is a matrix providing the number of edges between all the sets of nodes of a given degree, for all degrees, thus completely specifying all pairwise degree correlations, and additionally, the degree sequence itself. Our algorithm always produces independent samples without backtracking. The complexity of the graph construction algorithm is {O}({NM}) where N is the number of nodes and M is the number of edges.

Acute glandular fever-like illness in a patient with HTLV-III antibody.

PubMed

McCaul, T F; Tovey, G; Farthing, C F; Gazzard, B; Zuckerman, A J

1985-10-01

A lymph node biopsy obtained from a patient with human T-cell lymphocytotropic virus III/lymphadenopathy-associated virus (HTLV-III/LAV) antibody, presenting with an acute glandular fever-like illness, was examined by electron microscopy. Numerous pathological changes were present in the biopsy, including hypertrophy of smooth endoplasmic reticulum, intracytoplasmic rod-like inclusions within the cisternae of endoplasmic reticulum, multivesicular bodies, test-tube and ring-shaped forms, and tubulo-reticular structures. Intranuclear and intracytoplasmic viral-like particles measuring 105-120 nm in diameter and small cytoplasmic particles measuring 50-70 nm in diameter were found in some degenerating lymph node cells. These pathological findings may reflect a host cell response to various pathological and viral stimuli resulting from immune deficiency owing to infection with HTLV-III/LAV.

Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

NASA Astrophysics Data System (ADS)

Yin, Lan; Bozler, Carl; Harburg, Daniel V.; Omenetto, Fiorenzo; Rogers, John A.

2015-01-01

Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

Murine chronic lymph node window for longitudinal intravital lymph node imaging.

PubMed

Meijer, Eelco F J; Jeong, Han-Sin; Pereira, Ethel R; Ruggieri, Thomas A; Blatter, Cedric; Vakoc, Benjamin J; Padera, Timothy P

2017-08-01

Chronic imaging windows in mice have been developed to allow intravital microscopy of many different organs and have proven to be of paramount importance in advancing our knowledge of normal and disease processes. A model system that allows long-term intravital imaging of lymph nodes would facilitate the study of cell behavior in lymph nodes during the generation of immune responses in a variety of disease settings and during the formation of metastatic lesions in cancer-bearing mice. We describe a chronic lymph node window (CLNW) surgical preparation that allows intravital imaging of the inguinal lymph node in mice. The CLNW is custom-made from titanium and incorporates a standard coverslip. It allows stable longitudinal imaging without the need for serial surgeries while preserving lymph node blood and lymph flow. We also describe how to build and use an imaging stage specifically designed for the CLNW to prevent (large) rotational changes as well as respiratory movement during imaging. The entire procedure takes approximately half an hour per mouse, and subsequently allows for longitudinal intravital imaging of the murine lymph node and surrounding structures for up to 14 d. Small-animal surgery experience is required to successfully carry out the protocol.

Dynamic Communicability Predicts Infectiousness

NASA Astrophysics Data System (ADS)

Mantzaris, Alexander V.; Higham, Desmond J.

Using real, time-dependent social interaction data, we look at correlations between some recently proposed dynamic centrality measures and summaries from large-scale epidemic simulations. The evolving network arises from email exchanges. The centrality measures, which are relatively inexpensive to compute, assign rankings to individual nodes based on their ability to broadcast information over the dynamic topology. We compare these with node rankings based on infectiousness that arise when a full stochastic SI simulation is performed over the dynamic network. More precisely, we look at the proportion of the network that a node is able to infect over a fixed time period, and the length of time that it takes for a node to infect half the network. We find that the dynamic centrality measures are an excellent, and inexpensive, proxy for the full simulation-based measures.

Anticipating and controlling mask costs within EDA physical design

NASA Astrophysics Data System (ADS)

Rieger, Michael L.; Mayhew, Jeffrey P.; Melvin, Lawrence S.; Lugg, Robert M.; Beale, Daniel F.

2003-08-01

For low k1 lithography, more aggressive OPC is being applied to critical layers, and the number of mask layers with OPC treatments is growing rapidly. The 130 nm, process node required, on average, 8 layers containing rules- or model-based OPC. The 90 nm node will have 16 OPC layers, of which 14 layers contain aggressive model-based OPC. This escalation of mask pattern complexity, coupled with the predominant use of vector-scan e-beam (VSB) mask writers contributes to the rising costs of advanced mask sets. Writing times for OPC layouts are several times longer than for traditional layouts, making mask exposure the single largest cost component for OPC masks. Lower mask yields, another key factor in higher mask costs, is also aggravated by OPC. Historical mask set costs are plotted below. The initial cost of a 90 nm-node mask set will exceed one million dollars. The relative impact of mask cost on chip depends on how many total wafers are printed with each mask set. For many foundry chips, where unit production is often well below 1000 wafers, mask costs are larger than wafer processing costs. Further increases in NRE may begin to discourage these suppliers' adoption to 90 nm and smaller nodes. In this paper we will outline several alternatives for reducing mask costs by strategically leveraging dimensional margins. Dimensional specifications for a particular masking layer usually are applied uniformly to all features on that layer. As a practical matter, accuracy requirements on different features in the design may vary widely. Take a polysilicon layer, for example: global tolerance specifications for that layer are driven by the transistor-gate requirements; but these parameters over-specify interconnect feature requirements. By identifying features where dimensional accuracy requirements can be reduced, additional margin can be leveraged to reduce OPC complexity. Mask writing time on VSB tools will drop in nearly direct proportion to reduce shot count. By inspecting masks with reference to feature-dependent margins, instead of uniform specifications, mask yield can be effectively increased further reducing delivered mask expense.

Verification of E-Beam direct write integration into 28nm BEOL SRAM technology

NASA Astrophysics Data System (ADS)

Hohle, Christoph; Choi, Kang-Hoon; Gutsch, Manuela; Hanisch, Norbert; Seidel, Robert; Steidel, Katja; Thrun, Xaver; Werner, Thomas

2015-03-01

Electron beam direct write lithography (EBDW) potentially offers advantages for low-volume semiconductor manufacturing, rapid prototyping or design verification due to its high flexibility without the need of costly masks. However, the integration of this advanced patterning technology into complex CMOS manufacturing processes remains challenging. The low throughput of today's single e-Beam tools limits high volume manufacturing applications and maturity of parallel (multi) beam systems is still insufficient [1,2]. Additional concerns like transistor or material damage of underlying layers during exposure at high electron density or acceleration voltage have to be addressed for advanced technology nodes. In the past we successfully proved that potential degradation effects of high-k materials or ULK shrink can be neglected and were excluded by demonstrating integrated electrical results of 28nm node transistor and BEOL performance following 50kV electron beam dry exposure [3]. Here we will give an update on the integration of EBDW in the 300mm CMOS manufacturing processes of advanced integrated circuits at the 28nm SRAM node of GLOBALFOUNDRIES Dresden. The work is an update to what has been previously published [4]. E-beam patterning results of BEOL full chip metal and via layers with a dual damascene integration scheme using a 50kV VISTEC SB3050DW variable shaped electron beam direct writer at Fraunhofer IPMSCNT are demonstrated. For the patterning of the Metal layer a Mix & Match concept based on the sequence litho - etch -litho -etch (LELE) was developed and evaluated wherein several exposure fields were blanked out during the optical exposure. Etch results are shown and compared to the POR. Results are also shown on overlay performance and optimized e-Beam exposure time using most advanced data prep solutions and resist processes. The patterning results have been verified using fully integrated electrical measurement of metal lines and vias on wafer level. In summary we demonstrate the integration capability of EBDW into a productive CMOS process flow at the example of the 28nm SRAM technology node.

Advanced optical imaging platform for CD metrology and defect review on 130-nm to 100-nm node reticles: an overview of preliminary results

NASA Astrophysics Data System (ADS)

Hourd, Andrew C.; Grimshaw, Anthony; Scheuring, Gerd; Gittinger, Christian; Brueck, Hans-Juergen; Chen, Shiuh-Bin; Chen, Parkson W.; Hartmann, Hans; Ordynskyy, Volodymyr; Jonckheere, Rik M.; Philipsen, Vicky; Schaetz, Thomas; Sommer, Karl

2002-08-01

Critical Dimension fidelity continues to be one of the key driving parameters defining photomask quality and printing performance. The present advanced optical CD metrology systems, operating at i-line, will very soon be challenged as viable tools owing to their restricted resolution and measurement linearity impact on the ability to produce repeatable measurements. Alternative measurement technologies such as CD-SEM and -AFM have started to appear, but are also not without tier concerns in the field of reticle CD metrology. This paper introduces a new optical metrology system (MueTec /) operating at DUV wavelength (248nm), which has been specifically designed to meet the resolution and measurement repeatability requirements of reticle manufacture at the 130nm and 100nm nodes. The system is based upon a specially designed mechanical-optical platform for maximum stability and very advanced optical, illumination, alignment and software systems. The at wavelength operation of this system also makes it an ideal platform for defect printability analysis and review. The system is currently part of a European Commission funded assessment project (IST-2000-28086: McD'OR) to develop a testing strategy to verify the system performance, agree on equipment specifications and demonstrate its capability on advanced production reticles - including long-term reliability. It is the preliminary results from this evaluation that are presented here.

REAP (raster e-beam advanced process) using 50-kV raster e-beam system for sub-100-nm node mask technology

NASA Astrophysics Data System (ADS)

Baik, Ki-Ho; Dean, Robert L.; Mueller, Mark; Lu, Maiying; Lem, Homer Y.; Osborne, Stephen; Abboud, Frank E.

2002-07-01

A chemically amplified resist (CAR) process has been recognized as an approach to meet the demanding critical dimension (CD) specifications of 100nm node technology and beyond. Recently, significant effort has been devoted to optimizing CAR materials, which offer the characteristics required for next generation photomask fabrication. In this paper, a process established with a positive-tone CAR from TOK and 50kV MEBES eXara system is discussed. This resist is developed for raster scan 50 kV e-beam systems. It has high contrast, good coating characteristics, good dry etch selectivity, and high environmental stability. The coating process is conducted in an environment with amine concentration less than 2 ppb. A nitrogen environment is provided during plate transfer steps. Resolution using a 60nm writing grid is 90nm line and space patterns. CD linearity is maintained down to 240nm for isolated lines or spaces by applying embedded proximity effect correction (emPEC). Optimizations of post-apply bake (PAB) and post-expose bake (PEB) time, temperature, and uniformity are completed to improve adhesion, coating uniformity, and resolution. A puddle develop process is optimized to improve line edge roughness, edge slope, and resolution. Dry etch process is optimized on a TetraT system to transfer the resist image into the chrome layer with minimum etch bias.

Developing quartz wafer mold manufacturing process for patterned media

NASA Astrophysics Data System (ADS)

Chiba, Tsuyoshi; Fukuda, Masaharu; Ishikawa, Mikio; Itoh, Kimio; Kurihara, Masaaki; Hoga, Morihisa

2009-04-01

Recently, patterned media have gained attention as a possible candidate for use in the next generation of hard disk drives (HDD). Feature sizes on media are predicted to be 20-25 nm half pitch (hp) for discrete-track media in 2010. One method of fabricating such a fine pattern is by using a nanoimprint. The imprint mold for the patterned media is created from a 150-millimeter, rounded, quartz wafer. The purpose of the process introduced here was to construct a quartz wafer mold and to fabricate line and space (LS) patterns at 24 nmhp for DTM. Additionally, we attempted to achieve a dense hole (HOLE) pattern at 12.5 nmhp for BPM for use in 2012. The manufacturing process of molds for patterned media is almost the same as that for semiconductors, with the exception of the dry-etching process. A 150-millimeter quartz wafer was etched on a special tray made from carving a 6025 substrate, by using the photo-mask tool. We also optimized the quartz etching conditions. As a result, 24 nmhp LS and HOLE patterns were manufactured on the quartz wafer. In conclusion, the quartz wafer mold manufacturing process was established. It is suggested that the etching condition should be further optimized to achieve a higher resolution of HOLE patterns.

Contribution of hearing aids to music perception by cochlear implant users.

PubMed

Peterson, Nathaniel; Bergeson, Tonya R

2015-09-01

Modern cochlear implant (CI) encoding strategies represent the temporal envelope of sounds well but provide limited spectral information. This deficit in spectral information has been implicated as a contributing factor to difficulty with speech perception in noisy conditions, discriminating between talkers and melody recognition. One way to supplement spectral information for CI users is by fitting a hearing aid (HA) to the non-implanted ear. In this study 14 postlingually deaf adults (half with a unilateral CI and the other half with a CI and an HA (CI + HA)) were tested on measures of music perception and familiar melody recognition. CI + HA listeners performed significantly better than CI-only listeners on all pitch-based music perception tasks. The CI + HA group did not perform significantly better than the CI-only group in the two tasks that relied on duration cues. Recognition of familiar melodies was significantly enhanced for the group wearing an HA in addition to their CI. This advantage in melody recognition was increased when melodic sequences were presented with the addition of harmony. These results show that, for CI recipients with aidable hearing in the non-implanted ear, using a HA in addition to their implant improves perception of musical pitch and recognition of real-world melodies.

Musical and linguistic listening modes in the speech-to-song illusion bias timing perception and absolute pitch memory.

PubMed

Graber, Emily; Simchy-Gross, Rhimmon; Margulis, Elizabeth Hellmuth

2017-12-01

The speech-to-song (STS) illusion is a phenomenon in which some spoken utterances perceptually transform to song after repetition [Deutsch, Henthorn, and Lapidis (2011). J. Acoust. Soc. Am. 129, 2245-2252]. Tierney, Dick, Deutsch, and Sereno [(2013). Cereb. Cortex. 23, 249-254] developed a set of stimuli where half tend to transform to perceived song with repetition and half do not. Those that transform and those that do not can be understood to induce a musical or linguistic mode of listening, respectively. By comparing performance on perceptual tasks related to transforming and non-transforming utterances, the current study examines whether the musical mode of listening entails higher sensitivity to temporal regularity and better absolute pitch (AP) memory compared to the linguistic mode. In experiment 1, inter-stimulus intervals within STS trials were steady, slightly variable, or highly variable. Participants reported how temporally regular utterance entrances were. In experiment 2, participants performed an AP memory task after a blocked STS exposure phase. Utterances identically matching those used in the exposure phase were targets among transposed distractors in the test phase. Results indicate that listeners exhibit heightened awareness of temporal manipulations but reduced awareness of AP manipulations to transforming utterances. This methodology establishes a framework for implicitly differentiating musical from linguistic perception.

Performance and Loads Correlation of a UH-60A Slowed Rotor at High Advance Ratios

NASA Technical Reports Server (NTRS)

Kottapalli, Sesi B.

2012-01-01

Measured data from the slowed rotor part of the 2010 UH-60A Airloads Rotor test in the NASA Ames 40- by 80- Foot Wind Tunnel are compared with CAMRAD II calculations. The emphasis in this initial study is to correlate overall trends. This analytical effort considers advance ratios from 0.3 to 1.0, with the rotor rotational speed at 40%NR. The rotor performance parameters considered are the thrust coefficient, power coefficient, L/DE, torque, and H-force. The blade loads considered are the half peak-to-peak, mid-span and outboard torsion, flatwise, and chordwise moments, and the pitch link load. For advance ratios . 0.7, the overall trends for the performance and loads (excluding the pitch link load) could be captured, but with substantial overprediction or underprediction. The correlation gradually deteriorates as the advance ratio is increased and for advance ratios . 0.8 there is no correlation. The pitch link load correlation is not good. There is considerable scope for improvement in the prediction of the blade loads. Considering the modeling complexity associated with the unconventional operating condition under consideration, the current predictive ability to capture overall trends is encouraging.

Adjoint-Baed Optimal Control on the Pitch Angle of a Single-Bladed Vertical-Axis Wind Turbine

NASA Astrophysics Data System (ADS)

Tsai, Hsieh-Chen; Colonius, Tim

2017-11-01

Optimal control on the pitch angle of a NACA0018 single-bladed vertical-axis wind turbine (VAWT) is numerically investigated at a low Reynolds number of 1500. With fixed tip-speed ratio, the input power is minimized and mean tangential force is maximized over a specific time horizon. The immersed boundary method is used to simulate the two-dimensional, incompressible flow around a horizontal cross section of the VAWT. The problem is formulated as a PDE constrained optimization problem and an iterative solution is obtained using adjoint-based conjugate gradient methods. By the end of the longest control horizon examined, two controls end up with time-invariant pitch angles of about the same magnitude but with the opposite signs. The results show that both cases lead to a reduction in the input power but not necessarily an enhancement in the mean tangential force. These reductions in input power are due to the removal of a power-damaging phenomenon that occurs when a vortex pair is captured by the blade in the upwind-half region of a cycle. This project was supported by Caltech FLOWE center/Gordon and Betty Moore Foundation.

Pressure-Distribution Measurements at Large Angles of Pitch on Fins of Different Span-Chord Ratio on a 1/40-Scale Model of the U. S. Airship "Akron."

NASA Technical Reports Server (NTRS)

Mchugh, James G

1937-01-01

Report presents the results of pressure-distribution measurements on a 1/40-scale model of the U. S. Airship "Akron" conducted in the NACA 20-foot wind tunnel. The measurements were made on the starboard fin of each of four sets of horizontal tail surfaces, all of approximately the same area but differing in span-chord ratio, for five angles of pitch varying from 11.6 degrees to 34 degrees, for four elevator angles, and at air speeds ranging from 56 to 77 miles per hour. Pressures were also measured at 13 stations along the rear half of the port side of the hull at one elevator setting for the same five angles of pitch and at an air speed of approximately 91 miles per hour. The normal force on the fin and the moment of forces about the fin root were determined. The results indicate that, ignoring the effect on drag, it would be advantageous from structural considerations to use a fin of lower span-chord ratio than that used on the "Akron."

Studies on low-loss coupling of non-node anti-resonant hollow-core fiber and tapered fiber

NASA Astrophysics Data System (ADS)

Zhang, Naiqian; Wang, Zefeng; Liu, Wenbo; Xi, Xiaoming

2017-10-01

Up to now, near almost optical fiber gas lasers employ/adopt the scheme of free-space coupling, which increases the difficulty to adjust the optical path, and has poor stability. All-fiber structure fiber-gas lasers are important development directions in the future. We established the numerical model of SMF-28 type tapered single-mode fiber and non-node hollow-core fiber. When the SMF-28 type single-mode fiber has a waist diameter of 40μm when the light source is LP01 fundamental mode with 1550nm wavelength, the mode field diameter is the largest. Meanwhile, we simulated that the equivalent mode field diameter of non-node anti-resonant hollow-core fiber is about 75μm at the same 1550nm wavelength light source. Then, we use different waist diameters of SMF-28 type tapered fibers injected to the non-node anti-resonant hollow-core fiber in simulation and experiments. In the scheme of the single-ended low-loss coupling, the simulation results indicate that the best waist diameter of tapered fiber is 40μm, and the calculated maximum coupling efficiency is 83.55%. Meanwhile, the experimental result of maximum coupling efficiency is 80.74% when the best waist diameter of tapered fiber is also 40μm. As for the double-ended low-loss coupling, the calculated maximum coupling efficiency is near 83.38%.

Cross-Sectional Imaging of Boundary Lubrication Layer Formed by Fatty Acid by Means of Frequency-Modulation Atomic Force Microscopy.

PubMed

Hirayama, Tomoko; Kawamura, Ryota; Fujino, Keita; Matsuoka, Takashi; Komiya, Hiroshi; Onishi, Hiroshi

2017-10-10

To observe in situ the adsorption of fatty acid onto metal surfaces, cross-sectional images of the adsorption layer were acquired by frequency-modulation atomic force microscopy (FM-AFM). Hexadecane and palmitic acid were used as the base oil and typical fatty acid, respectively. A Cu-coated silicon wafer was prepared as the target substrate. The solvation structure formed by hexadecane molecules at the interface between the Cu substrate and the hexadecane was observed, and the layer pitch was found to be about 0.6 nm, which corresponds to the height of hexadecane molecules. This demonstrates that hexadecane molecules physically adsorbed onto the surface due to van der Waals forces with lying orientation because hexadecane is a nonpolar hydrocarbon. When hexadecane with palmitic acid was put on the Cu substrate instead of pure hexadecane, an adsorption layer of palmitic acid was observed at the interface. The layer pitch was about 2.5-2.8 nm, which matches the chain length of palmitic acid molecules well. This indicates that the original adsorption layer was monolayer or single bilayer in the local area. In addition, a cross-sectional image captured 1 h after observation started to reveal that the adsorbed additive layer gradually grew up to be thicker than about 20 nm due to an external stimulus, such as cantilever oscillation. This is the first report of in situ observation of an adsorbed layer by FM-AFM in the tribology field and demonstrates that FM-AFM is useful for clarifying the actual boundary lubrication mechanism.

Sentinel node detection in pre-operative axillary staging.

PubMed

Trifirò, Giuseppe; Viale, Giuseppe; Gentilini, Oreste; Travaini, Laura Lavinia; Paganelli, Giovanni

2004-06-01

The concept of sentinel lymph node biopsy in breast cancer surgery is based on the fact that the tumour drains in a logical way via the lymphatic system, from the first to upper levels. Since axillary node dissection does not improve the prognosis of patients with breast cancer, sentinel lymph node biopsy might replace complete axillary dissection for staging of the axilla in clinically N0 patients. Sentinel lymph node biopsy would represent a significant advantage as a minimally invasive procedure, considering that about 70% of patients are found to be free from metastatic disease, yet axillary node dissection can lead to significant morbidity. Subdermal or peritumoural injection of small aliquots (and very low activity) of radiotracer is preferred to intratumoural administration, and (99m)Tc-labelled colloids with most of the particles in the 100-200 nm size range would be ideal for radioguided sentinel node biopsy in breast cancer. The success rate of radioguidance in localising the sentinel lymph node in breast cancer surgery is about 97% in institutions where a high number of procedures are performed, and the success rate of lymphoscintigraphy in sentinel node detection is about 100%. The sentinel lymph node should be processed for intraoperative frozen section examination in its entirety, based on conventional histopathology and, when necessary, immune staining with anti-cytokeratin antibody. Nowadays, lymphoscintigraphy is a useful procedure in patients with different clinical evidence of breast cancer.

Optimizing fusion PIC code performance at scale on Cori Phase 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koskela, T. S.; Deslippe, J.

In this paper we present the results of optimizing the performance of the gyrokinetic full-f fusion PIC code XGC1 on the Cori Phase Two Knights Landing system. The code has undergone substantial development to enable the use of vector instructions in its most expensive kernels within the NERSC Exascale Science Applications Program. We study the single-node performance of the code on an absolute scale using the roofline methodology to guide optimization efforts. We have obtained 2x speedups in single node performance due to enabling vectorization and performing memory layout optimizations. On multiple nodes, the code is shown to scale wellmore » up to 4000 nodes, near half the size of the machine. We discuss some communication bottlenecks that were identified and resolved during the work.« less

Investigation of fabrication process for sub 20-nm dense pattern of non-chemically amplified electron beam resist based on acrylic polymers

NASA Astrophysics Data System (ADS)

Ochiai, Shunsuke; Takayama, Tomohiro; Kishimura, Yukiko; Asada, Hironori; Sonoda, Manae; Iwakuma, Minako; Hoshino, Ryoichi

2016-10-01

In this study, we examine exposure characteristics of a positive tone electron beam resist consisting of methyl α- chloroacrylate and α-methylstyrene by changing the development process conditions. 25/25 nm and 30/30 nm line-andspace (L/S) patterns (design value) are developed in amyl and heptyl acetates. The resist patterns developed at 0ºC for 120 s show the better shapes having the vertical sidewalls than those developed at 22 °C for 60 s. The dose margins of pattern formation for 0°C development become wider, although the sensitivities are lower. The effect of post exposure baking (PEB) on exposure characteristics is also investigated. Adding PEB process performed at 120°C for 2 min, the dose margin also becomes wider although the sensitivity is lower. 20/20 nm L/S patterns are fabricated by using PEB and/or 0°C development. Though the required exposure dose is larger, the resist pattern is improved by PEB and/or 0°C development. The formation of 35 nm pitch pattern is also presented.

Optimization of aeromedical base locations in New Mexico using a model that considers crash nodes and paths.

PubMed

Erdemir, Elif Tokar; Batta, Rajan; Spielman, Seth; Rogerson, Peter A; Blatt, Alan; Flanigan, Marie

2008-05-01

In a recent paper, Tokar Erdemir et al. (2008) introduce models for service systems with service requests originating from both nodes and paths. We demonstrate how to apply and extend their approach to an aeromedical base location application, with specific focus on the state of New Mexico (NM). The current aeromedical base locations of NM are selected without considering motor vehicle crash paths. Crash paths are the roads on which crashes occur, where each road segment has a weight signifying relative crash occurrence. We analyze the loss in accident coverage and location error for current aeromedical base locations. We also provide insights on the relevance of considering crash paths when selecting aeromedical base locations. Additionally, we look briefly at some of the tradeoff issues in locating additional trauma centers vs. additional aeromedical bases in the current aeromedical system of NM. Not surprisingly, tradeoff analysis shows that by locating additional aeromedical bases, we always attain the required coverage level with a lower cost than with locating additional trauma centers.

A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32 nm node and beyond

NASA Astrophysics Data System (ADS)

Yasutake, Nobuaki; Azuma, Atsushi; Ishida, Tatsuya; Ohuchi, Kazuya; Aoki, Nobutoshi; Kusunoki, Naoki; Mori, Shinji; Mizushima, Ichiro; Morooka, Tetsu; Kawanaka, Shigeru; Toyoshima, Yoshiaki

2007-11-01

A novel SiGe-S/D structure for high performance pMOSFET called two-step recessed SiGe-source/drain (S/D) is developed with careful optimization of recessed SiGe-S/D structure. With this method, hole mobility, short channel effect and S/D resistance in pMOSFET are improved compared with conventional recessed SiGe-S/D structure. To enhance device performance such as drain current drivability, SiGe region has to be closer to channel region. Then, conventional deep SiGe-S/D region with carefully optimized shallow SiGe SDE region showed additional device performance improvement without SCE degradation. As a result, high performance 24 nm gate length pMOSFET was demonstrated with drive current of 451 μA/μm at ∣ Vdd∣ of 0.9 V and Ioff of 100 nA/μm (552 μA/μm at ∣ Vdd∣ of 1.0 V). Furthermore, by combining with Vdd scaling, we indicate the extendability of two-step recessed SiGe-S/D structure down to 15 nm node generation.

In vitro autoradiographic localization of angiotensin-converting enzyme in sarcoid lymph nodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Allen, R.K.; Chai, S.Y.; Dunbar, M.S.

1986-09-01

Angiotensin-converting enzyme (ACE) was localized in sarcoid lymph nodes by an in vitro autoradiographic technique using a synthetic ACE inhibitor of high affinity, /sup 125/I-labelled 351A. The lymph nodes were from seven patients with active sarcoidosis who underwent mediastinoscopy and from six control subjects who had nodes resected at either mediastinoscopy or laparotomy. Angiotensin-converting enzyme was localized in the epithelioid cells of sarcoid granulomata in markedly increased amounts compared with control nodes, where it was restricted to vessels and some histiocytes. In sarcoid lymph nodes, there was little ACE present in lymphocytes or fibrous tissue. Sarcoid nodes with considerable fibrosismore » had much less intense ACE activity than the nonfibrotic nodes. The specific activity of ACE measured by an enzymatic assay in both the control and sarcoid lymph nodes closely reflected the ACE activity demonstrated by autoradiography. Sarcoid lymph nodes with fibrosis had an ACE specific activity of half that of nonfibrotic nodes (p less than 0.05). There was a 15-fold increase in specific ACE activity in sarcoid nodes (p less than 0.05) compared to normal. Serum ACE was significantly higher in those sarcoid patients whose lymph nodes were not fibrosed compared with those with fibrosis (p less than 0.01). This technique offers many advantages over the use of polyclonal antibodies. The 351A is a highly specific ACE inhibitor, chemically defined and in limitless supply. This method enables the quantitation of results, and autoradiographs may be stored indefinitely for later comparison.« less

Concurrent communication among multi-transceiver stations over shared media. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Birk, Yitzhak

1987-01-01

In order to increase a local-area network's throughput beyond a single bus data rate without using dedicated switching nodes, multiple buses and multitransceiver stations are required. The design space of single-hop interconnections is explored among such stations. Interconnections are presented whose throughput can grow quadratically with the number of transmitters and receivers per station. These are referred to as selective broadcast interconnections (SBIs). The performance of various SBIs are studied. A spread-spectrum channel can accommodate several current successful transmission, and a single-transceiver node can thus utilize only a small fraction of the channel capacity. In order to allocate the appropriate fraction of capacity to a busy node, it is proposed to equip it with several transmitters and receivers, thereby turning it into a supernode. Several architectures and operation policies for supernodes are suggested and compared. It is shown that a supernode can significantly outperform a collection of independent conventional nodes with the same total numbers of transmitters and receivers. Packet-radio networks with half-duplex nodes, as well as networks with full-duplex nodes, are considered.

Effect of TPA on ion fluxes and DNA synthesis in vascular smooth muscle cells

PubMed Central

1985-01-01

Previous reports have suggested that phorbol esters can decrease the affinity of epidermal growth factor (EGF) for its cellular receptors. Investigations of the consequences of the interaction between phorbol esters and EGF, however, have been limited to EGF-stimulated Na/H exchange in A431 cells (Whitely, B., D. Cassel, Y.-X. Zuang, and L. Glaser, 1984, J. Cell Biol., 99:1162-1166). In the present study, the effect of the phorbol ester 12-O-tetradecanoyl phorbol-13-acetate (TPA) on EGF-stimulated ion transport and DNA synthesis was determined in cultured vascular smooth muscle cells (A7r5). It was found that TPA stimulated Na/H exchange when added alone (half-maximal stimulatory concentration, 25 nM). However, when cells were pretreated with TPA and then challenged with EGF, TPA significantly inhibited EGF-stimulated Na/H exchange (78%; half-maximal inhibition [Ki] at 2.5 nM). Subsequently the effects of TPA on Na/K/Cl co-transport were measured. TPA was observed to inhibit Na/K/Cl co-transport (half-maximal inhibitory concentration, 50 nM) and also to inhibit EGF-stimulated Na/K/Cl co-transport (100%; Ki at 5 nM). Finally, the effects of TPA on DNA synthesis were assessed. TPA had a modest stimulatory effect on DNA synthesis (half-maximal stimulatory concentration, 6 nM), but had a significant inhibitory effect on EGF-stimulated DNA synthesis (56%; Ki at 5 nM). These findings suggest that the inhibitory effect of TPA on EGF-receptor functions goes beyond previously reported effects on Na/H exchange in A431 cells and extends to EGF-stimulation of Na/K/Cl co- transport and DNA synthesis in vascular smooth muscle cells. PMID:2410432

Radiation Status of Sub-65 nm Electronics

NASA Technical Reports Server (NTRS)

Pellish, Jonathan A.

2011-01-01

Ultra-scaled complementary metal oxide semiconductor (CMOS) includes commercial foundry capabilities at and below the 65 nm technology node Radiation evaluations take place using standard products and test characterization vehicles (memories, logic/latch chains, etc.) NEPP focus is two-fold: (1) Conduct early radiation evaluations to ascertain viability for future NASA missions (i.e. leverage commercial technology development). (2) Uncover gaps in current testing methodologies and mechanism comprehension -- early risk mitigation.

Sentinel Node Mapping Using a Fluorescent Dye and Visible Light During Laparoscopic Gastrectomy for Early Gastric Cancer: Result of a Prospective Study From a Single Institute.

PubMed

Lee, Chang Min; Park, Sungsoo; Park, Seong-Heum; Jung, Sung Woo; Choe, Jung Wan; Sul, Ji-Young; Jang, You Jin; Mok, Young-Jae; Kim, Jong-Han

2017-04-01

The aim of this study was to investigate the feasibility of sentinel node mapping using a fluorescent dye and visible light in patients with gastric cancer. Recently, fluorescent imaging technology offers improved visibility with the possibility of better sensitivity or accuracy in sentinel node mapping. Twenty patients with early gastric cancer, for whom laparoscopic distal gastrectomy with standard lymphadenectomy had been planned, were enrolled in this study. Before lymphadenectomy, the patients received a gastrofiberoscopic peritumoral injection of fluorescein solution. The sentinel basin was investigated via laparoscopic fluorescent imaging under blue light (wavelength of 440-490 nm) emitted from an LED curing light. The detection rate and lymph node status were analyzed in the enrolled patients. In addition, short-term clinical outcomes were also investigated. No hypersensitivity to the dye was identified in any enrolled patients. Sentinel nodes were detected in 19 of 20 enrolled patients (95.0%), and metastatic lymph nodes were found in 2 patients. The latter lymph nodes belonged to the sentinel basin of each patient. Meanwhile, 1 patient (5.0%) experienced a postoperative complication that was unrelated to sentinel node mapping. No mortality was recorded among enrolled cases. Sentinel node mapping with visible light fluorescence was a feasible method for visualizing sentinel nodes in patients with early gastric cancer. In addition, this method is advantageous in terms of visualizing the concrete relationship between the sentinel nodes and surrounding structures.

Performance evaluation of modulation and multiple access schemes in ultraviolet optical wireless connections for two atmosphere thickness cases.

PubMed

Raptis, Nikos; Pikasis, Evangelos; Syvridis, Dimitris

2016-08-01

The exploitation of optical wireless communication channels in a non-line-of-sight regime is studied for point-to-point and networking configurations considering the use of light-emitting diodes. Two environments with different scattering center densities are considered, assuming operation at 265 nm. The bit error rate performance of both pulsed and multicarrier modulation schemes is examined, using numerical approaches. In the networking scenario, a central node only receives data, one node transmits useful data, and the rest of them act as interferers. The performance of the desirable node's transmissions is evaluated. The access to the medium is controlled by a code division multiple access scheme.

Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel †

PubMed Central

Yokoyama, Toshifumi; Tsutsui, Masafumi; Suzuki, Masakatsu; Nishi, Yoshiaki; Mizuno, Ikuo; Lahav, Assaf

2018-01-01

We developed a low parasitic light sensitivity (PLS) and low dark current 2.8 μm global shutter pixel. We propose a new inner lens design concept to realize both low PLS and high quantum efficiency (QE). 1/PLS is 7700 and QE is 62% at a wavelength of 530 nm. We also propose a new storage-gate based memory node for low dark current. P-type implants and negative gate biasing are introduced to suppress dark current at the surface of the memory node. This memory node structure shows the world smallest dark current of 9.5 e−/s at 60 °C. PMID:29370146

Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel.

PubMed

Yokoyama, Toshifumi; Tsutsui, Masafumi; Suzuki, Masakatsu; Nishi, Yoshiaki; Mizuno, Ikuo; Lahav, Assaf

2018-01-25

Abstract : We developed a low parasitic light sensitivity (PLS) and low dark current 2.8 μm global shutter pixel. We propose a new inner lens design concept to realize both low PLS and high quantum efficiency (QE). 1/PLS is 7700 and QE is 62% at a wavelength of 530 nm. We also propose a new storage-gate based memory node for low dark current. P-type implants and negative gate biasing are introduced to suppress dark current at the surface of the memory node. This memory node structure shows the world smallest dark current of 9.5 e - /s at 60 °C.

Time Periodic Control of a Multi-Blade Helicopter.

DTIC Science & Technology

1988-05-01

part of an element of p X rotor inflow ratio; Langrangian multiplier; Poincare exponent H rotor inflow ratio with respect to the hub *P plane A...and a $ complex conjugate pair in the right- half plane resulting from ( the longitudinal velocity and pitch coupling. Without a horizontal tail, the ... Poincare Exponents . . .. 182 VI. Controller Gains ...... ................ 184 viii I ’Q List of Symbols Listed below are the principal symbols used in this

RF wave observations in beam-plasma discharge

NASA Technical Reports Server (NTRS)

Bernstein, W.

1986-01-01

The Beam Plasma Discharge (BPD) was produced in the large vacuum chamber at Johnson Space Center (20 x 30 m) using an energetic electron beam of moderately high perveance. A more complete expression of the threshold current I sub c taking into account the pitch angle injection dependence is given. Ambient plasma density inferred from wave measurements under various beam conditions are reported. Maximum frequency of the excited RF band behaves differently than the frequency of the peak amplitude. The latter shows signs of parabolic saturation consistent with the light data. Beam plasma state (pre-BPD or BPD) does not affect the pitch angle dependence. Unexpected strong modulation of the RF spectrum at half odd integer of the electron cyclotron frequency (n + 1/2)f sub ce is reported (5 n 10). Another new feature, the presence of wave emission around 3/2 f sub ce for I sub b is approximate I sub c is reported.

Speaker-Sex Discrimination for Voiced and Whispered Vowels at Short Durations.

PubMed

Smith, David R R

2016-01-01

Whispered vowels, produced with no vocal fold vibration, lack the periodic temporal fine structure which in voiced vowels underlies the perceptual attribute of pitch (a salient auditory cue to speaker sex). Voiced vowels possess no temporal fine structure at very short durations (below two glottal cycles). The prediction was that speaker-sex discrimination performance for whispered and voiced vowels would be similar for very short durations but, as stimulus duration increases, voiced vowel performance would improve relative to whispered vowel performance as pitch information becomes available. This pattern of results was shown for women's but not for men's voices. A whispered vowel needs to have a duration three times longer than a voiced vowel before listeners can reliably tell whether it's spoken by a man or woman (∼30 ms vs. ∼10 ms). Listeners were half as sensitive to information about speaker-sex when it is carried by whispered compared with voiced vowels.

Linear electro-optic effect in the organic crystal 4-aminobenzophenone

NASA Astrophysics Data System (ADS)

Lochran, S.; Bailey, R. T.; Cruickshank, F. R.; Pugh, D.; Sherwood, J. N.

1997-01-01

The linear electro-optic effect in single crystals of 4-aminobenzphenone (ABP) is reported together with calibration data on LiNbO 3 . For ABP the linear electro-optic coefficients r 22 and r 32 at 488 nm were found to be 2.12 and 5.05 pm V, respectively, with the corresponding reduced half-wave voltages being 49.4 0.1 and 9.3 0.1 kV. For LiNbO 3 the half-wave voltage was found to be 4.0 0.1 kV at 632.8 nm and 2.4 0.1 kV at 488 nm.

Al nanogrid electrode for ultraviolet detectors.

PubMed

Ding, G; Deng, J; Zhou, L; Gan, Q; Hwang, J C M; Dierolf, V; Bartoli, F J; Mazuir, C; Schoenfeld, W V

2011-09-15

Optical properties of Al nanogrids of different pitches and gaps were investigated both theoretically and experimentally. Three-dimensional finite-difference time-domain simulation predicted that surface plasmons at the air/Al interface would enhance ultraviolet transmission through the subwavelength gaps of the nanogrid, making it an effective electrode on GaN-based photodetectors to compensate for the lack of transparent electrode and high p-type doping. The predicted transmission enhancement was verified by confocal scanning optical microscopy performed at 365 nm. The quality of the nanogrids fabricated by electron-beam lithography was verified by near-field scanning optical microscopy and scanning electron microscopy. Based on the results, the pitch and gap of the nanogrids can be optimized for the best trade-off between electrical conductivity and optical transmission at different wavelengths. Based on different cutoff wavelengths, the nanogrids can also double as a filter to render photodetectors solar-blind.

Characterization of a 6×6-mm2 75-μm cell MPPC suitable for the Cherenkov Telescope Array project

NASA Astrophysics Data System (ADS)

Romeo, G.; Bonanno, G.; Garozzo, S.; Grillo, A.; Marano, D.; Munari, M.; Timpanaro, M. C.; Catalano, O.; Giarrusso, S.; Impiombato, D.; La Rosa, G.; Sottile, G.

2016-08-01

This paper presents the latest characterization results of a novel Low Cross-Talk (LCT) large-area (6×6-mm2) Multi-Pixel Photon Counter (MPPC) detector manufactured by Hamamatsu, belonging to the recent LCT5 family and achieving a fill-factor enhancement and cross-talk reduction. In addition, the newly adopted resin coating is demonstrated to yield improved photon detection capabilities in the 290-350 nm spectral range, making the new LCT MPPC particularly suitable for emerging applications like Cherenkov Telescopes. For a 3×3-mm2 version of the new MPPC under test, a comparative analysis of the large pixel pitch (75-μm) detector versus the smaller pixel pitch (50-μm) detector is also undertaken. Furthermore, measurements of the 6×6-mm2 MPPC response versus the angle of incidence are provided for the characterized device.

Sub-diffraction limit laser ablation via multiple exposures using a digital micromirror device.

PubMed

Heath, Daniel J; Grant-Jacob, James A; Feinaeugle, Matthias; Mills, Ben; Eason, Robert W

2017-08-01

We present the use of digital micromirror devices as variable illumination masks for pitch-splitting multiple exposures to laser machine the surfaces of materials. Ultrafast laser pulses of length 150 fs and 800 nm central wavelength were used for the sequential machining of contiguous patterns on the surface of samples in order to build up complex structures with sub-diffraction limit features. Machined patterns of tens to hundreds of micrometers in lateral dimensions with feature separations as low as 270 nm were produced in electroless nickel on an optical setup diffraction limited to 727 nm, showing a reduction factor below the Abbe diffraction limit of ∼2.7×. This was compared to similar patterns in a photoresist optimized for two-photon absorption, which showed a reduction factor of only 2×, demonstrating that multiple exposures via ablation can produce a greater resolution enhancement than via two-photon polymerization.

Large-Area Direct Hetero-Epitaxial Growth of 1550-nm InGaAsP Multi-Quantum-Well Structures on Patterned Exact-Oriented (001) Silicon Substrates by Metal Organic Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Megalini, Ludovico; Cabinian, Brian C.; Zhao, Hongwei; Oakley, Douglas C.; Bowers, John E.; Klamkin, Jonathan

2018-02-01

We employ a simple two-step growth technique to grow large-area 1550-nm laser structures by direct hetero-epitaxy of III-V compounds on patterned exact-oriented (001) silicon (Si) substrates by metal organic chemical vapor deposition. Densely-packed, highly uniform, flat and millimeter-long indium phosphide (InP) nanowires were grown from Si v-grooves separated by silicon dioxide (SiO2) stripes with various widths and pitches. Following removal of the SiO2 patterns, the InP nanowires were coalesced and, subsequently, 1550-nm laser structures were grown in a single overgrowth without performing any polishing for planarization. X-ray diffraction, photoluminescence, atomic force microscopy and transmission electron microscopy analyses were used to characterize the epitaxial material. PIN diodes were fabricated and diode-rectifying behavior was observed.

Infrared Polarizer Fabrication by Imprinting on Sb-Ge-Sn-S Chalcogenide Glass

NASA Astrophysics Data System (ADS)

Yamada, Itsunari; Yamashita, Naoto; Tani, Kunihiko; Einishi, Toshihiko; Saito, Mitsunori; Fukumi, Kouhei; Nishii, Junji

2012-01-01

We fabricated infrared wire-grid polarizers consisting of a 500-nm pitch Al grating on a low toxic chalcogenide glass (Sb-Ge-Sn-S system) using the direct imprinting of subwavelength grating followed by a deposition of Al metal by thermal evaporation. To fabricate the subwavelength grating on a chalcogenide glass more easily, the sharp grating was formed on the mold surface. The fabricated polarizer with Al thickness of 130 nm exhibited a polarization function with a transverse magnetic transmittance greater than 60% in the 5-9 µm wavelength range, and an extinction ratio greater than 20 dB in 3.5-11 µm wavelength range. The extinction ratio of the element with Al wires of 180-nm thickness reached 27 dB at 5.4-µm wavelength. The polarizer can be fabricated at lower costs and simpler fabrication processes compared to conventional infrared polarizers.

Multilayer Network Analysis of Nuclear Reactions

NASA Astrophysics Data System (ADS)

Zhu, Liang; Ma, Yu-Gang; Chen, Qu; Han, Ding-Ding

2016-08-01

The nuclear reaction network is usually studied via precise calculation of differential equation sets, and much research interest has been focused on the characteristics of nuclides, such as half-life and size limit. In this paper, however, we adopt the methods from both multilayer and reaction networks, and obtain a distinctive view by mapping all the nuclear reactions in JINA REACLIB database into a directed network with 4 layers: neutron, proton, 4He and the remainder. The layer names correspond to reaction types decided by the currency particles consumed. This combined approach reveals that, in the remainder layer, the β-stability has high correlation with node degree difference and overlapping coefficient. Moreover, when reaction rates are considered as node strength, we find that, at lower temperatures, nuclide half-life scales reciprocally with its out-strength. The connection between physical properties and topological characteristics may help to explore the boundary of the nuclide chart.

A comparison of advanced overlay technologies

NASA Astrophysics Data System (ADS)

Dasari, Prasad; Smith, Nigel; Goelzer, Gary; Liu, Zhuan; Li, Jie; Tan, Asher; Koh, Chin Hwee

2010-03-01

The extension of optical lithography to 22nm and beyond by Double Patterning Technology is often challenged by CDU and overlay control. With reduced overlay measurement error budgets in the sub-nm range, relying on traditional Total Measurement Uncertainty (TMU) estimates alone is no longer sufficient. In this paper we will report scatterometry overlay measurements data from a set of twelve test wafers, using four different target designs. The TMU of these measurements is under 0.4nm, within the process control requirements for the 22nm node. Comparing the measurement differences between DBO targets (using empirical and model based analysis) and with image-based overlay data indicates the presence of systematic and random measurement errors that exceeds the TMU estimate.

Development of silica-encapsulated silver nanoparticles as contrast agents intended for dual-energy mammography.

PubMed

Karunamuni, Roshan; Naha, Pratap C; Lau, Kristen C; Al-Zaki, Ajlan; Popov, Anatoliy V; Delikatny, Edward J; Tsourkas, Andrew; Cormode, David P; Maidment, Andrew D A

2016-09-01

Dual-energy (DE) mammography has recently entered the clinic. Previous theoretical and phantom studies demonstrated that silver provides greater contrast than iodine for this technique. Our objective was to characterize and evaluate in vivo a prototype silver contrast agent ultimately intended for DE mammography. The prototype silver contrast agent was synthesized using a three-step process: synthesis of a silver core, silica encapsulation and PEG coating. The nanoparticles were then injected into mice to determine their accumulation in various organs, blood half-life and dual-energy contrast. All animal procedures were approved by the institutional animal care and use committee. The final diameter of the nanoparticles was measured to be 102 (±9) nm. The particles were removed from the vascular circulation with a half-life of 15 min, and accumulated in macrophage-rich organs such as the liver, spleen and lymph nodes. Dual-energy subtraction techniques increased the signal difference-to-noise ratio of the particles by as much as a factor of 15.2 compared to the single-energy images. These nanoparticles produced no adverse effects in mice. Silver nanoparticles are an effective contrast agent for dual-energy x-ray imaging. With further design improvements, silver nanoparticles may prove valuable in breast cancer screening and diagnosis. • Silver has potential as a contrast agent for DE mammography. • Silica-coated silver nanoparticles are biocompatible and suited for in vivo use. • Silver nanoparticles produce strong contrast in vivo using DE mammography imaging systems.

Mask manufacturing of advanced technology designs using multi-beam lithography (part 2)

NASA Astrophysics Data System (ADS)

Green, Michael; Ham, Young; Dillon, Brian; Kasprowicz, Bryan; Hur, Ik Boum; Park, Joong Hee; Choi, Yohan; McMurran, Jeff; Kamberian, Henry; Chalom, Daniel; Klikovits, Jan; Jurkovic, Michal; Hudek, Peter

2016-09-01

As optical lithography is extended into 10nm and below nodes, advanced designs are becoming a key challenge for mask manufacturers. Techniques including advanced optical proximity correction (OPC) and Inverse Lithography Technology (ILT) result in structures that pose a range of issues across the mask manufacturing process. Among the new challenges are continued shrinking sub-resolution assist features (SRAFs), curvilinear SRAFs, and other complex mask geometries that are counter-intuitive relative to the desired wafer pattern. Considerable capability improvements over current mask making methods are necessary to meet the new requirements particularly regarding minimum feature resolution and pattern fidelity. Advanced processes using the IMS Multi-beam Mask Writer (MBMW) are feasible solutions to these coming challenges. In this paper, Part 2 of our study, we further characterize an MBMW process for 10nm and below logic node mask manufacturing including advanced pattern analysis and write time demonstration.

Quantum storage of entangled telecom-wavelength photons in an erbium-doped optical fibre

NASA Astrophysics Data System (ADS)

Saglamyurek, Erhan; Jin, Jeongwan; Verma, Varun B.; Shaw, Matthew D.; Marsili, Francesco; Nam, Sae Woo; Oblak, Daniel; Tittel, Wolfgang

2015-02-01

The realization of a future quantum Internet requires the processing and storage of quantum information at local nodes and interconnecting distant nodes using free-space and fibre-optic links. Quantum memories for light are key elements of such quantum networks. However, to date, neither an atomic quantum memory for non-classical states of light operating at a wavelength compatible with standard telecom fibre infrastructure, nor a fibre-based implementation of a quantum memory, has been reported. Here, we demonstrate the storage and faithful recall of the state of a 1,532 nm wavelength photon entangled with a 795 nm photon, in an ensemble of cryogenically cooled erbium ions doped into a 20-m-long silica fibre, using a photon-echo quantum memory protocol. Despite its currently limited efficiency and storage time, our broadband light-matter interface brings fibre-based quantum networks one step closer to reality.

Near-infrared autofluorescence imaging to detect parathyroid glands in thyroid surgery.

PubMed

Ladurner, R; Al Arabi, N; Guendogar, U; Hallfeldt, Kkj; Stepp, H; Gallwas, Jks

2018-01-01

Objective To identify and save parathyroid glands during thyroidectomy by displaying their autofluorescence. Methods Autofluorescence imaging was carried out during thyroidectomy with and without central lymph node dissection. After visual recognition by the surgeon, the parathyroid glands and the surrounding tissue were exposed to near-infrared light with a wavelength of 690-770 nm using a modified Karl Storz near infrared/indocyanine green endoscopic system. Parathyroid tissue was expected to show near infrared autofluorescence at 820 nm, captured in the blue channel of the camera. Results We investigated 41 parathyroid glands from 20 patients; 37 glands were identified correctly based on near-infrared autofluorescence. Neither lymph nodes nor thyroid revealed substantial autofluorescence and nor did adipose tissue. Conclusions Parathyroid tissue is characterised by showing autofluorescence in the near-infrared spectrum. This effect can be used to identify and preserve parathyroid glands during thyroidectomy.

EUV local CDU healing performance and modeling capability towards 5nm node

NASA Astrophysics Data System (ADS)

Jee, Tae Kwon; Timoshkov, Vadim; Choi, Peter; Rio, David; Tsai, Yu-Cheng; Yaegashi, Hidetami; Koike, Kyohei; Fonseca, Carlos; Schoofs, Stijn

2017-10-01

Both local variability and optical proximity correction (OPC) errors are big contributors to the edge placement error (EPE) budget which is closely related to the device yield. The post-litho contact hole healing will be demonstrated to meet after-etch local variability specifications using a low dose, 30mJ/cm2 dose-to-size, positive tone developed (PTD) resist with relevant throughput in high volume manufacturing (HVM). The total local variability of the node 5nm (N5) contact holes will be characterized in terms of local CD uniformity (LCDU), local placement error (LPE), and contact edge roughness (CER) using a statistical methodology. The CD healing process has complex etch proximity effects, so the OPC prediction accuracy is challenging to meet EPE requirements for the N5. Thus, the prediction accuracy of an after-etch model will be investigated and discussed using ASML Tachyon OPC model.

Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Popovici, M., E-mail: Mihaela.Ioana.Popovici@imec.be; Swerts, J.; Redolfi, A.

2014-02-24

Improved metal-insulator-metal capacitor (MIMCAP) stacks with strontium titanate (STO) as dielectric sandwiched between Ru as top and bottom electrode are shown. The Ru/STO/Ru stack demonstrates clearly its potential to reach sub-20 nm technology nodes for dynamic random access memory. Downscaling of the equivalent oxide thickness, leakage current density (J{sub g}) of the MIMCAPs, and physical thickness of the STO have been realized by control of the Sr/Ti ratio and grain size using a heterogeneous TiO{sub 2}/STO based nanolaminate stack deposition and a two-step crystallization anneal. Replacement of TiN with Ru as both top and bottom electrodes reduces the amount of electricallymore » active defects and is essential to achieve a low leakage current in the MIM capacitor.« less

Optical characterization of ex-vivo axillary lymph nodes of breast-cancer patients using a custom-built spectrophotometer

NASA Astrophysics Data System (ADS)

Sampathkumar, Ashwin; Saegusa-Beecroft, Emi; Mamou, Jonathan; Chitnis, Parag V.; Machi, Junji; Feleppa, Ernest J.

2014-03-01

Quantitative photoacoustics is emerging as a new hybrid modality to investigate diseases and cells in human pathology and cytology studies. Optical absorption of light is the predominant mechanism behind the photoacoustic effect. Therefore, a need exits to characterize the optical properties of specimens and to identify the relevant operating wavelengths for photoacoustic imaging. We have developed a custom low-cost spectrophotometer to measure the optical properties of human axillary lymph nodes dissected for breast-cancer staging. Optical extinction curves of positive and negative nodes were determined in the spectral range of 400 to 1000 nm. We have developed a model to estimate tissue optical properties, taking into account the role of fat and saline. Our results enabled us to select the optimal optical wavelengths for maximizing the imaging contrast between metastatic and noncancerous tissue in axillary lymph nodes.

Influence of twin boundaries on superconducting gap nodes in FeSe single crystal studied by STM/STS

NASA Astrophysics Data System (ADS)

Watashige, T.; Hanaguri, T.; Kohsaka, Y.; Iwaya, K.; Fu, Y.; Kasahara, S.; Watanabe, D.; Mizukami, Y.; Mikami, T.; Kawamoto, Y.; Kurata, S.; Shibauchi, T.; Matsuda, Y.; Böhmer, A. E.; Wolf, T.; Meingast, C.; Löhneysen, H. V.

2014-03-01

We performed scanning tunneling microscopy (STM) and spectroscopy (STS) measurements on high-quality FeSe single crystals grown by vapor transport technique to examine the superconducting-gap structure. In MBE-grown FeSe thin films, based on the V-shaped tunneling spectra, nodal superconductivity is suggested. It is interesting to investigate how the nodes are affected by various kinds of defects. We found that twin boundaries bring about drastic effects on the gap nodes. With approaching to the twin boundary, V-shaped spectra gradually change to U-shaped ones. Interestingly, in the area between the twin boundaries separated by about 30 nm, the gap node is completely lifted and there appears a finite gap over +/-0.4 meV. This unusual twin-boundary effect will give us a hint to elucidate the superconducting-gap structure.

Silicon Carbide Defect Qubits/Quantum Memory with Field-Tuning: OSD Quantum Science and Engineering Program (QSEP)

DTIC Science & Technology

2017-08-01

accessories for mounting e. Laser power supply f. TEC power supply 12. Optical filters from SEMROCK ®, THORLABS Inc., EDMUND OPTICS® a. 532-nm, laser...line filter ( SEMROCK ®) b. 550-nm, hard-coated, short-pass filter (THORLABS Inc.) c. 532-nm long-pass filter ( SEMROCK ®) d. 808-nm laser-line filter... SEMROCK ®) e. 850-nm /10-nm full width at half maximum (FWHM) bandpass filter ( SEMROCK ®) f. 980-nm bandpass filter ( SEMROCK ®) g. 976-nm laser-line

MIGRATION OF INTRADERMALLY INJECTED QUANTUM DOTS TO SENTINEL ORGANS IN MICE

PubMed Central

Gopee, Neera V.; Roberts, Dean W.; Webb, Peggy; Cozart, Christy R.; Siitonen, Paul H.; Warbritton, Alan R.; Yu, William W.; Colvin, Vicki L.; Walker, Nigel J.; Howard, Paul C.

2012-01-01

Topical exposure to nanoscale materials is likely from a variety of sources including sunscreens and cosmetics. Because the in vivo disposition of nanoscale materials is not well understood, we have evaluated the distribution of quantum dots (QD) following intradermal injection into female SKH-1 hairless mice as a model system for determining tissue localization following intradermal infiltration. The QD [CdSe core, CdS capped, poly(ethylene glycol) (PEG) coated, 37 nm diameter, 621 nm fluorescence emission] were injected intradermally on the right dorsal flank. Within minutes following intradermal injection, the highly UV fluorescent QD could be observed moving from the injection sites apparently through the lymphatic duct system to regional lymph nodes. Residual fluorescent QD remained at the site of injection until necropsy at 24 hours. Quantification of cadmium and selenium levels after 0, 4, 8, 12 or 24 hours in multiple tissues, using inductively coupled plasma mass spectrometry (ICP-MS) showed a time-dependent loss of cadmium from the injection site, and accumulation in the liver, regional draining lymph nodes, kidney, spleen, and hepatic lymph node. Fluorescence microscopy corroborated the ICP-MS results regarding the tissue distribution of QD. The results indicated that (a) intradermally injected nanoscale QD remained as a deposit in skin and penetrated the surrounding viable subcutis, (b) QD were distributed to draining lymph nodes through the subcutaneous lymphatics and to the liver and other organs, and (c) sentinel organs are effective locations for monitoring transdermal penetration of nanoscale materials into animals. PMID:17404394

Method for Estimating Thread Strength Reduction of Damaged Parent Holes with Inserts

NASA Technical Reports Server (NTRS)

Johnson, David L.; Stratton, Troy C.

2005-01-01

During normal assembly and disassembly of bolted-joint components, thread damage and/or deformation may occur. If threads are overloaded, thread damage/deformation can also be anticipated. Typical inspection techniques (e.g. using GO-NO GO gages) may not provide adequate visibility of the extent of thread damage. More detailed inspection techniques have provided actual pitch-diameter profiles of damaged-hardware holes. A method to predict the reduction in thread shear-out capacity of damaged threaded holes has been developed. This method was based on testing and analytical modeling. Test samples were machined to simulate damaged holes in the hardware of interest. Test samples containing pristine parent-holes were also manufactured from the same bar-stock material to provide baseline results for comparison purposes. After the particular parent-hole thread profile was machined into each sample a helical insert was installed into the threaded hole. These samples were tested in a specially designed fixture to determine the maximum load required to shear out the parent threads. It was determined from the pristine-hole samples that, for the specific material tested, each individual thread could resist an average load of 3980 pounds. The shear-out loads of the holes having modified pitch diameters were compared to the ultimate loads of the specimens with pristine holes. An equivalent number of missing helical coil threads was then determined based on the ratio of shear-out loads for each thread configuration. These data were compared with the results from a finite element model (FEM). The model gave insights into the ability of the thread loads to redistribute for both pristine and simulated damage configurations. In this case, it was determined that the overall potential reduction in thread load-carrying capability in the hardware of interest was equal to having up to three fewer threads in the hole that bolt threads could engage. One- half of this potential reduction was due to local pitch-diameter variations and the other half was due to overall pitch-diameter enlargement beyond Class 2 fit. This result was important in that the thread shear capacity for this particular hardware design was the limiting structural capability. The details of the method development, including the supporting testing, data reduction and analytical model results comparison will be discussed hereafter.

I-DWRL: Improved Dual Wireless Radio Localization Using Magnetometer.

PubMed

Aziz, Abdul; Kumar, Ramesh; Joe, Inwhee

2017-11-15

In the dual wireless radio localization (DWRL) technique each sensor node is equipped with two ultra-wide band (UWB) radios; the distance between the two radios is a few tens of centimeters. For localization, the DWRL technique must use at least two pre-localized nodes to fully localize an unlocalized node. Moreover, in the DWRL technique it is also not possible for two sensor nodes to properly communicate location information unless each of the four UWB radios of two communicating sensor nodes cannot approach the remaining three radios. In this paper, we propose an improved DWRL (I-DWRL) algorithm along with mounting a magnetometer sensor on one of the UWB radios of all sensor nodes. This addition of a magnetometer helps to improve DWRL algorithm such that only one localized sensor node is required for the localization of an unlocalized sensor node, and localization can also be achieved even when some of the four radios of two nodes are unable to communicate with the remaining three radios. The results show that with the use of a magnetometer a greater number of nodes can be localized with a smaller transmission range, less energy and a shorter period of time. In comparison with the conventional DWRL algorithm, our I-DWRL not only maintains the localization error but also requires around half of semi-localizations, 60% of the time, 70% of the energy and a shorter communication range to fully localize an entire network. Moreover, I-DWRL can even localize more nodes while transmission range is not sufficient for DWRL algorithm.

I-DWRL: Improved Dual Wireless Radio Localization Using Magnetometer

PubMed Central

Aziz, Abdul; Kumar, Ramesh; Joe, Inwhee

2017-01-01

In the dual wireless radio localization (DWRL) technique each sensor node is equipped with two ultra-wide band (UWB) radios; the distance between the two radios is a few tens of centimeters. For localization, the DWRL technique must use at least two pre-localized nodes to fully localize an unlocalized node. Moreover, in the DWRL technique it is also not possible for two sensor nodes to properly communicate location information unless each of the four UWB radios of two communicating sensor nodes cannot approach the remaining three radios. In this paper, we propose an improved DWRL (I-DWRL) algorithm along with mounting a magnetometer sensor on one of the UWB radios of all sensor nodes. This addition of a magnetometer helps to improve DWRL algorithm such that only one localized sensor node is required for the localization of an unlocalized sensor node, and localization can also be achieved even when some of the four radios of two nodes are unable to communicate with the remaining three radios. The results show that with the use of a magnetometer a greater number of nodes can be localized with a smaller transmission range, less energy and a shorter period of time. In comparison with the conventional DWRL algorithm, our I-DWRL not only maintains the localization error but also requires around half of semi-localizations, 60% of the time, 70% of the energy and a shorter communication range to fully localize an entire network. Moreover, I-DWRL can even localize more nodes while transmission range is not sufficient for DWRL algorithm. PMID:29140291

Experimental designs for a Benign Paroxysmal Positional Vertigo model

PubMed Central

2013-01-01

Background The pathology of the Benign Paroxysmal Positional Vertigo (BPPV) is detected by a clinician through maneuvers consisting of a series of consecutive head turns that trigger the symptoms of vertigo in patient. A statistical model based on a new maneuver has been developed in order to calculate the volume of endolymph displaced after the maneuver. Methods A simplification of the Navier‐Stokes problem from the fluids theory has been used to construct the model. In addition, the same cubic splines that are commonly used in kinematic control of robots were used to obtain an appropriate description of the different maneuvers. Then experimental designs were computed to obtain an optimal estimate of the model. Results D‐optimal and c‐optimal designs of experiments have been calculated. These experiments consist of a series of specific head turns of duration Δt and angle α that should be performed by the clinician on the patient. The experimental designs obtained indicate the duration and angle of the maneuver to be performed as well as the corresponding proportion of replicates. Thus, in the D‐optimal design for 100 experiments, the maneuver consisting of a positive 30° pitch from the upright position, followed by a positive 30° roll, both with a duration of one and a half seconds is repeated 47 times. Then the maneuver with 60° /6° pitch/roll during half a second is repeated 16 times and the maneuver 90° /90° pitch/roll during half a second is repeated 37 times. Other designs with significant differences are computed and compared. Conclusions A biomechanical model was derived to provide a quantitative basis for the detection of BPPV. The robustness study for the D‐optimal design, with respect to the choice of the nominal values of the parameters, shows high efficiencies for small variations and provides a guide to the researcher. Furthermore, c‐optimal designs give valuable assistance to check how efficient the D‐optimal design is for the estimation of each of the parameters. The experimental designs provided in this paper allow the physician to validate the model. The authors of the paper have held consultations with an ENT consultant in order to align the outline more closely to practical scenarios. PMID:23509996

PEGylated polylysine dendrimers increase lymphatic exposure to doxorubicin when compared to PEGylated liposomal and solution formulations of doxorubicin.

PubMed

Ryan, Gemma M; Kaminskas, Lisa M; Bulitta, Jürgen B; McIntosh, Michelle P; Owen, David J; Porter, Christopher J H

2013-11-28

Improved delivery of chemotherapeutic drugs to the lymphatic system has the potential to augment outcomes for cancer therapy by enhancing activity against lymph node metastases. Uptake of small molecule chemotherapeutics into the lymphatic system, however, is limited. Nano-sized drug carriers have the potential to promote access to the lymphatics, but to this point, this has not been examined in detail. The current study therefore evaluated the lymphatic exposure of doxorubicin after subcutaneous and intravenous administration as a simple solution formulation or when formulated as a doxorubicin loaded PEGylated poly-lysine dendrimer (hydrodynamic diameter 12 nm), a PEGylated liposome (100 nm) and various pluronic micellar formulations (~5 nm) to thoracic lymph duct cannulated rats. Plasma and lymph pharmacokinetics were analysed by compartmental pharmacokinetic modelling in S-ADAPT, and Berkeley Madonna software was used to predict the lymphatic exposure of doxorubicin over an extended period of time. The micelle formulations displayed poor in vivo stability, resulting in doxorubicin profiles that were similar to that observed after administration of the doxorubicin solution formulation. In contrast, the dendrimer formulation significantly increased the recovery of doxorubicin in the thoracic lymph after both intravenous and subcutaneous dosing when compared to the solution or micellar formulation. Dendrimer-doxorubicin also resulted in increases in lymphatic doxorubicin concentrations when compared to the liposome formulation, although liposomal doxorubicin did increase lymphatic transport when compared to the solution formulation. Specifically, the dendrimer formulation increased the recovery of doxorubicin in the lymph up to 30 h post dose by up to 685 fold and 3.7 fold when compared to the solution and liposomal formulations respectively. Using the compartmental model to predict lymphatic exposure to longer time periods suggested that doxorubicin exposure to the lymphatic system would ultimately be 9796 times and 6.1 times greater after administration of dendrimer doxorubicin when compared to the solution and liposome formulations respectively. The recovery of doxorubicin in the sentinel lymph nodes draining the subcutaneous injection site was also quantified directly, and consistent with the lymph pharmacokinetic data, lymph node recovery was greatest for the dendrimer formulation (12% of dosed doxorubicin/g node) when compared to the liposome (1.4%/g node) and solution (<1%/g node) formulations. The data suggest that dendrimer-based drug delivery systems have the potential to enhance drug exposure to lymph-based drug targets such as lymphatic metastases. © 2013.

Critical dimensional linewidth calibration using UV microscope and laser interferometry

NASA Astrophysics Data System (ADS)

Li, Qi; Gao, Si-tian; Li, Wei; Lu, Ming-zhen; Zhang, Ming-kai

2013-10-01

In order to calibrate the critical dimensional (CD) uncertainty of lithography masks in semiconductor manufacturing, NIM is building a two dimensional metrological UV microscope which has traceable measurement ability for nanometer linewidths and pitches. The microscope mainly consists of UV light receiving components, piezoelectric ceramics (PZT) driven stage and interferometer calibration framework. In UV light receiving components they include all optical elements on optical path. The UV light originates from Köhler high aperture transmit/reflect illumination sources; then goes through objective lens to UV splitting optical elements; after that, one part of light attains UV camera for large range calibration, the other part of light passes through a three dimensional adjusted pinhole and is collected by PMT for nanoscale scanning. In PZT driven stage, PZT stick actuators with closed loop control are equipped to push/pull a flexural hinge based platform. The platform has a novel designed compound flexural hinges which nest separate X, Y direction moving mechanisms within one layer but avoiding from mutual cross talk, besides this, the hinges also contain leverage structures to amplify moving distance. With these designs, the platform can attain 100 μm displacement ranges as well as 1 nm resolution. In interferometer framework a heterodyne multi-pass interferometer is mounted on the platform, which measures X-Y plane movement and Z axis rotation, through reference mirror mounted on objective lens tube and Zerodur mirror mounted on PZT platform, the displacement is traced back to laser wavelength. When development is finished, the apparatus can offer the capability to calibrate one dimensional linewidths and two dimensional pitches ranging from 200nm to 50μm with expanded uncertainty below 20nm.

Panel discussion summary: do we need a revolution in design and process integration to enable sub-100-nm technology nodes?

NASA Astrophysics Data System (ADS)

Grobman, Warren D.

2002-07-01

Dramatically increasing mask set costs, long-loop design-fabrication iterations, and lithography of unprecedented complexity and cost threaten to disrupt time-accepted IC industry progression as described by Moore"s Law. Practical and cost-effective IC manufacturing below the 100nm technology node presents significant and unique new challenges spanning multiple disciplines and overlapping traditionally separable components of the design-through-chip manufacturing flow. Lithographic and other process complexity is compounded by design, mask, and infrastructure technologies, which do not sufficiently account for increasingly stringent and complex manufacturing issues. Deep subwavelength and atomic-scale process and device physics effects increasingly invade and impact the design flow strongly at a time when the pressures for increased design productivity are escalating at a superlinear rate. Productivity gaps, both upstream in design and downstream in fabrication, are anticipated by many to increase due to dramatic increases in inherent complexity of the design-to-chip equation. Furthermore, the cost of lithographic equipment is increasing at an aggressive compound growth rate so large that we can no longer economically derive the benefit of the increased number of circuits per unit area unless we extend the life of lithographic equipment for more generations, and deeper into the subwavelength regime. Do these trends unambiguously lead to the conclusion that we need a revolution in design and design-process integration to enable the sub-100nm nodes? Or is such a premise similar to other well-known predictions of technology brick walls that never came true?

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maaloum, M.; Muller, P.; Beker, A-F.

Almost two decades ago, measurements of force versus extension on isolated double-stranded DNA molecules revealed a force plateau. This unusual stretching phenomenon in DNA suggests that the long molecules may be extended from the usual B form into a new conformation. Different models have been proposed to describe the nature of DNA in its stretched form, S-DNA. Using atomic force microscopy combined with a molecular combing method, we identified the structure of {lambda}-phage DNA for different stretching values. We provide strong evidence for the existence of a first-order transition between B form and S form. Beyond a certain extension ofmore » the natural length, DNA molecules adopt a new double-helix conformation characterized by a diameter of 1.2 nm and a helical pitch of18 nm.« less

Optical Imaging and Spectroscopic Characterization of Self-Assembled Environmental Adsorbates on Graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gallagher, Patrick; Li, Yilei; Watanabe, Kenji

Topographic studies using scanning probes have found that graphene surfaces are often covered by micron-scale domains of periodic stripes with a 4 nm pitch. These stripes have been variously interpreted as structural ripples or as self-assembled adsorbates. We show that the stripe domains are optically anisotropic by imaging them using a polarization-contrast technique. Optical spectra between 1.1 and 2.8 eV reveal that the anisotropy in the in-plane dielectric function is predominantly real, reaching 0.6 for an assumed layer thickness of 0.3 nm. Furthermore, the spectra are incompatible with a rippled graphene sheet but would be quantitatively explained by the self-assemblymore » of chainlike organic molecules into nanoscale stripes.« less

Optical Imaging and Spectroscopic Characterization of Self-Assembled Environmental Adsorbates on Graphene

DOE PAGES

Gallagher, Patrick; Li, Yilei; Watanabe, Kenji; ...

2018-03-28

Topographic studies using scanning probes have found that graphene surfaces are often covered by micron-scale domains of periodic stripes with a 4 nm pitch. These stripes have been variously interpreted as structural ripples or as self-assembled adsorbates. We show that the stripe domains are optically anisotropic by imaging them using a polarization-contrast technique. Optical spectra between 1.1 and 2.8 eV reveal that the anisotropy in the in-plane dielectric function is predominantly real, reaching 0.6 for an assumed layer thickness of 0.3 nm. Furthermore, the spectra are incompatible with a rippled graphene sheet but would be quantitatively explained by the self-assemblymore » of chainlike organic molecules into nanoscale stripes.« less

Super-polishing of Zerodur aspheres by means of conventional polishing technology

NASA Astrophysics Data System (ADS)

Polak, Jaroslav; Klepetková, Eva; Pošmourný, Josef; Šulc, Miroslav; Procháska, František; Tomka, David; Matoušek, Ondřej; Poláková, Ivana; Šubert, Eduard

2015-01-01

This paper describes a quest to find simple technique to superpolish Zerodur asphere (55μm departure from best fit sphere) that could be employed on old fashion way 1-excenter optical polishing machine. The work focuses on selection of polishing technology, study of different polishing slurries and optimization of polishing setup. It is demonstrated that either by use of fine colloidal CeO2 slurry or by use of bowl-feed polishing setup with CeO2 charged pitch we could reach 0.4nm RMS roughness while removing <30nm of surface layer. This technique, although not optimized, was successfully used to improve surface roughness on already prepolished Zerodur aspheres without necessity to involve sophisticated super-polishing technology and highly trained manpower.

Smart wing rotation and trailing-edge vortices enable high frequency mosquito flight

PubMed Central

Bomphrey, Richard J.; Nakata, Toshiyuki; Phillips, Nathan; Walker, Simon M.

2017-01-01

Summary Mosquitoes exhibit unique wing kinematics; their long, slender wings flap at remarkably high frequencies for their size (>800 Hz) and with lower stroke amplitudes than any other insect group1. This shifts weight support away from the translation-dominated, aerodynamic mechanisms used by most insects2, as well as by helicopters and aeroplanes, towards poorly understood rotational mechanisms that occur when pitching at the end of each half-stroke. Here we report wing kinematics and solve the full Navier-Stokes equations using computational fluid dynamics with overset grids and validate our results with in vivo flow measurements. We show that, while familiar separated flow patterns are used by mosquitoes, much of the aerodynamic force that supports their weight is generated in a manner unlike any previously described flying animal. In total, there are three key features: leading-edge vortices (a well-known mechanism that appears to be almost ubiquitous in insect flight), trailing-edge vortices caused by a novel form of wake capture at stroke reversal, and rotational drag. The two new elements are largely independent of the wing velocity, instead relying on rapid changes in the pitch angle (wing rotation) at the end of each half stroke, and are therefore relatively immune to the shallow flapping amplitude. Moreover, these mechanisms are particularly well-suited to high-aspect ratio mosquito wings. PMID:28355184

Smart wing rotation and trailing-edge vortices enable high frequency mosquito flight

NASA Astrophysics Data System (ADS)

Bomphrey, Richard J.; Nakata, Toshiyuki; Phillips, Nathan; Walker, Simon M.

2017-03-01

Mosquitoes exhibit unusual wing kinematics; their long, slender wings flap at remarkably high frequencies for their size (>800 Hz)and with lower stroke amplitudes than any other insect group. This shifts weight support away from the translation-dominated, aerodynamic mechanisms used by most insects, as well as by helicopters and aeroplanes, towards poorly understood rotational mechanisms that occur when pitching at the end of each half-stroke. Here we report free-flight mosquito wing kinematics, solve the full Navier-Stokes equations using computational fluid dynamics with overset grids, and validate our results with in vivo flow measurements. We show that, although mosquitoes use familiar separated flow patterns, much of the aerodynamic force that supports their weight is generated in a manner unlike any previously described for a flying animal. There are three key features: leading-edge vortices (a well-known mechanism that appears to be almost ubiquitous in insect flight), trailing-edge vortices caused by a form of wake capture at stroke reversal, and rotational drag. The two new elements are largely independent of the wing velocity, instead relying on rapid changes in the pitch angle (wing rotation) at the end of each half-stroke, and they are therefore relatively immune to the shallow flapping amplitude. Moreover, these mechanisms are particularly well suited to high aspect ratio mosquito wings.

The shift-invariant discrete wavelet transform and application to speech waveform analysis.

PubMed

Enders, Jörg; Geng, Weihua; Li, Peijun; Frazier, Michael W; Scholl, David J

2005-04-01

The discrete wavelet transform may be used as a signal-processing tool for visualization and analysis of nonstationary, time-sampled waveforms. The highly desirable property of shift invariance can be obtained at the cost of a moderate increase in computational complexity, and accepting a least-squares inverse (pseudoinverse) in place of a true inverse. A new algorithm for the pseudoinverse of the shift-invariant transform that is easier to implement in array-oriented scripting languages than existing algorithms is presented together with self-contained proofs. Representing only one of the many and varied potential applications, a recorded speech waveform illustrates the benefits of shift invariance with pseudoinvertibility. Visualization shows the glottal modulation of vowel formants and frication noise, revealing secondary glottal pulses and other waveform irregularities. Additionally, performing sound waveform editing operations (i.e., cutting and pasting sections) on the shift-invariant wavelet representation automatically produces quiet, click-free section boundaries in the resulting sound. The capabilities of this wavelet-domain editing technique are demonstrated by changing the rate of a recorded spoken word. Individual pitch periods are repeated to obtain a half-speed result, and alternate individual pitch periods are removed to obtain a double-speed result. The original pitch and formant frequencies are preserved. In informal listening tests, the results are clear and understandable.

Study of Wave-Particle Interactions for Whistler Mode Waves at Oblique Angles by Utilizing the Gyroaveraging Method

NASA Astrophysics Data System (ADS)

Hsieh, Yi-Kai; Omura, Yoshiharu

2017-10-01

We investigate the properties of whistler mode wave-particle interactions at oblique wave normal angles to the background magnetic field. We find that electromagnetic energy of waves at frequencies below half the electron cyclotron frequency can flow nearly parallel to the ambient magnetic field. We thereby confirm that the gyroaveraging method, which averages the cyclotron motion to the gyrocenter and reduces the simulation from two-dimensional to one-dimensional, is valid for oblique wave-particle interaction. Multiple resonances appear for oblique propagation but not for parallel propagation. We calculate the possible range of resonances with the first-order resonance condition as a function of electron kinetic energy and equatorial pitch angle. To reveal the physical process and the efficiency of electron acceleration by multiple resonances, we assume a simple uniform wave model with constant amplitude and frequency in space and time. We perform test particle simulations with electrons starting at specific equatorial pitch angles and kinetic energies. The simulation results show that multiple resonances contribute to acceleration and pitch angle scattering of energetic electrons. Especially, we find that electrons with energies of a few hundred keV can be accelerated efficiently to a few MeV through the n = 0 Landau resonance.

The shift-invariant discrete wavelet transform and application to speech waveform analysis

NASA Astrophysics Data System (ADS)

Enders, Jörg; Geng, Weihua; Li, Peijun; Frazier, Michael W.; Scholl, David J.

2005-04-01

The discrete wavelet transform may be used as a signal-processing tool for visualization and analysis of nonstationary, time-sampled waveforms. The highly desirable property of shift invariance can be obtained at the cost of a moderate increase in computational complexity, and accepting a least-squares inverse (pseudoinverse) in place of a true inverse. A new algorithm for the pseudoinverse of the shift-invariant transform that is easier to implement in array-oriented scripting languages than existing algorithms is presented together with self-contained proofs. Representing only one of the many and varied potential applications, a recorded speech waveform illustrates the benefits of shift invariance with pseudoinvertibility. Visualization shows the glottal modulation of vowel formants and frication noise, revealing secondary glottal pulses and other waveform irregularities. Additionally, performing sound waveform editing operations (i.e., cutting and pasting sections) on the shift-invariant wavelet representation automatically produces quiet, click-free section boundaries in the resulting sound. The capabilities of this wavelet-domain editing technique are demonstrated by changing the rate of a recorded spoken word. Individual pitch periods are repeated to obtain a half-speed result, and alternate individual pitch periods are removed to obtain a double-speed result. The original pitch and formant frequencies are preserved. In informal listening tests, the results are clear and understandable. .

Electrically tunable color filter based on a polarization-tailored nano-photonic dichroic resonator featuring an asymmetric subwavelength grating.

PubMed

Park, Chang-Hyun; Yoon, Yeo-Taek; Shrestha, Vivek Raj; Park, Chul-Soon; Lee, Sang-Shin; Kim, Eun-Soo

2013-11-18

We have demonstrated a highly efficient electrically tunable color filter, which provides precise control of color output, taking advantage of a nano-photonic polarization-tailored dichroic resonator combined with a liquid-crystal based polarization rotator. The visible dichroic resonator based on the guided mode resonance, which incorporates a planar dielectric waveguide in Si3N4 integrated with an asymmetric two-dimensional subwavelength Al grating with unequal pitches along its principal axes, exhibited polarization specific transmission featuring high efficiency up to 75%. The proposed tunable color filters were constructed by combining three types of dichroic resonators, each of which deals with a mixture of two primary colors (i.e. blue/green, blue/red, and green/red) with a polarization rotator exploiting a twisted nematic liquid crystal cell. The output colors could be dynamically and seamlessly customized across the blend of the two corresponding primary colors, by altering the polarization via the voltage applied to the polarization rotator. For the blue/red filter, the center wavelength was particularly adjusted from 460 to 610 nm with an applied voltage variation of 2 V, leading to a tuning range of up to 150 nm. And the spectral tuning was readily confirmed via color mapping. The proposed devices may permit the tuning span to be readily extended by tailoring the grating pitches.

Effect of Environment on the Fidelity of Control and Measurements of Solid-State Quantum Devices

DTIC Science & Technology

2013-07-22

space vs. thickness of the film a for a DQD charge qubit in one dimension with dot geometry d = 30 nm and l = 60 nm at 0 K...constitute a conducting half- space , rather than the more sparse gate geometry used in [134]. It is also instructive to compare our results with the ...40 ms [134]. However, it must be kept in mind that we have so far considered the simpler top gate geometry of a conducting half-

Design considerations and emerging challenges for nanotube-, nanowire-, and negative capacitor-field effect transistors

NASA Astrophysics Data System (ADS)

Wahab, Md. Abdul

As the era of classical planar metal-oxide-semiconductor field-effect transistors (MOSFETs) comes to an end, the semiconductor industry is beginning to adopt 3D device architectures, such as FinFETs, starting at the 22 nm technology node. Since physical limits such as short channel effect (SCE) and self-heating may dominate, it may be difficult to scale Si FinFET below 10 nm. In this regard, transistors with different materials, geometries, or operating principles may help. For example, gate has excellent electrostatic control over 2D thin film channel with planar geometry, and 1D nanowire (NW) channel with gate-all-around (GAA) geometry to reduce SCE. High carrier mobility of single wall carbon nanotube (SWNT) or III-V channels may reduce VDD to reduce power consumption. Therefore, as channel of transistor, 2D thin film of array SWNTs and 1D III-V multi NWs are promising for sub 10 nm technology nodes. In this thesis, we analyze the potential of these transistors from process, performance, and reliability perspectives. For SWNT FETs, we discuss a set of challenges (such as how to (i) characterize diameter distribution, (ii) remove metallic (m)-SWNTs, and (iii) avoid electrostatic cross-talk among the neighboring SWNTs), and demonstrate solution strategies both theoretically and experimentally. Regarding self-heating in these new class of devices (SWNT FET and GAA NW FET including state-of-the-art FinFET), higher thermal resistance from poor thermal conducting oxides results significant temperature rise, and reduces the IC life-time. For GAA NW FETs, we discuss accurate self-heating evaluation with good spatial, temporal, and thermal resolutions. The introduction of negative capacitor (NC), as gate dielectric stack of transistor, allows sub 60 mV/dec operation to reduce power consumption significantly. Taken together, our work provides a comprehensive perspective regarding the challenges and opportunities of sub 10 nm technology nodes.

Sensitivity study and parameter optimization of OCD tool for 14nm finFET process

NASA Astrophysics Data System (ADS)

Zhang, Zhensheng; Chen, Huiping; Cheng, Shiqiu; Zhan, Yunkun; Huang, Kun; Shi, Yaoming; Xu, Yiping

2016-03-01

Optical critical dimension (OCD) measurement has been widely demonstrated as an essential metrology method for monitoring advanced IC process in the technology node of 90 nm and beyond. However, the rapidly shrunk critical dimensions of the semiconductor devices and the increasing complexity of the manufacturing process bring more challenges to OCD. The measurement precision of OCD technology highly relies on the optical hardware configuration, spectral types, and inherently interactions between the incidence of light and various materials with various topological structures, therefore sensitivity analysis and parameter optimization are very critical in the OCD applications. This paper presents a method for seeking the optimum sensitive measurement configuration to enhance the metrology precision and reduce the noise impact to the greatest extent. In this work, the sensitivity of different types of spectra with a series of hardware configurations of incidence angles and azimuth angles were investigated. The optimum hardware measurement configuration and spectrum parameter can be identified. The FinFET structures in the technology node of 14 nm were constructed to validate the algorithm. This method provides guidance to estimate the measurement precision before measuring actual device features and will be beneficial for OCD hardware configuration.

Precuring implant photoresists for shrink and patterning control

NASA Astrophysics Data System (ADS)

Winroth, Gustaf; Rosseel, Erik; Delvaux, Christie; Sanchez, Efrain Altamirano; Ercken, Monique

2013-10-01

193-nm compatible photoresists are turning out to be the new platform for implant lithography, due to the increasing requirements in both resolution and overlay. Shrinkage of such resists is becoming progressively the most topical issue for aggressive nodes, where conventional pretreatments from older resist platforms, such as ultraviolet flood exposures, are not directly transferable to (meth-)acrylate-type resists. The precuring options available for state-of-the-art implant photoresists for 193-nm lithography is explored, in which we target to reduce the shrinkage during implantation for trenching critical dimensions (CDs) that are relevant for nodes <20 nm. An extensive study comprising different approaches, including laser-, ion-, and electron-based treatments, is presented. Each treatment is individually investigated with the aim to find not only a valid pretreatment for shrinkage control during implantation, but also to understand what effect alternative pretreatments have on the morphology and the CDs of thick photoresists used as implant stopping layers. Viable options for further process optimization in order to integrate them into device process flows are found. To this extent, the shrink behavior after pretreatment is shown, and the additional shrink dynamics after implantation are compared.

A general design strategy for block copolymer directed self-assembly patterning of integrated circuits contact holes using an alphabet approach.

PubMed

Yi, He; Bao, Xin-Yu; Tiberio, Richard; Wong, H-S Philip

2015-02-11

Directed self-assembly (DSA) is a promising lithography candidate for technology nodes beyond 14 nm. Researchers have shown contact hole patterning for random logic circuits using DSA with small physical templates. This paper introduces an alphabet approach that uses a minimal set of small physical templates to pattern all contacts configurations on integrated circuits. We illustrate, through experiments, a general and scalable template design strategy that links the DSA material properties to the technology node requirements.

Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

PubMed

Chen, Hao; Zhang, Qi; Chou, Stephen Y

2015-02-27

Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.

Characterization of Large-Area SiPM Array for PET Applications

NASA Astrophysics Data System (ADS)

Du, Junwei; Yang, Yongfeng; Bai, Xiaowei; Judenhofer, Martin S.; Berg, Eric; Di, Kun; Buckley, Steve; Jackson, Carl; Cherry, Simon R.

2016-02-01

The performance of an 8 ×8 array of 6.0 ×6.0 mm2 (active area) SiPMs was evaluated for PET applications using crystal arrays with different pitch sizes (3.4, 1.5, 1.35, and 1.2 mm) and custom designed five-channel front-end readout electronics (four channels for position information and one channel for timing information). The total area of this SiPM array is 57.4 ×57.4 mm2, and the pitch size is 7.2 mm. It was fabricated using enhanced blue sensitivity SiPMs (MicroFB-60035-SMT) with peak spectral sensitivity at 420 nm. The performance of the SiPM array was characterized by measuring flood histogram decoding quality, energy resolution, timing resolution and saturation at several bias voltages (from 25.0 to 30.0 V in 0.5 V intervals) and two different temperatures ( 5° C and 20°C). Results show that the best flood histogram was obtained at a bias voltage of 28.0 V and 5°C and an array of polished LSO crystals with a pitch as small as 1.2 mm can be resolved. No saturation was observed up to a bias voltage of 29.5 V during the experiments, due to adequate light sharing between SiPMs. Energy resolution and timing resolution at 5°C ranged from 12.7 ±0.8% to 14.6 ±1.4% and 1.58 ±0.13 ns to 2.50 ±0.44 ns, for crystal array pitch sizes of 3.4 and 1.2 mm, respectively. Superior flood histogram quality, energy resolution and timing resolution were obtained with larger crystal array pitch sizes and at lower temperature. Based on our findings, we conclude that this large-area SiPM array can serve as a suitable photodetector for high-resolution small-animal PET or dedicated human brain PET scanners.

Announcing Supercomputer Summit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wells, Jack; Bland, Buddy; Nichols, Jeff

Summit is the next leap in leadership-class computing systems for open science. With Summit we will be able to address, with greater complexity and higher fidelity, questions concerning who we are, our place on earth, and in our universe. Summit will deliver more than five times the computational performance of Titan’s 18,688 nodes, using only approximately 3,400 nodes when it arrives in 2017. Like Titan, Summit will have a hybrid architecture, and each node will contain multiple IBM POWER9 CPUs and NVIDIA Volta GPUs all connected together with NVIDIA’s high-speed NVLink. Each node will have over half a terabyte ofmore » coherent memory (high bandwidth memory + DDR4) addressable by all CPUs and GPUs plus 800GB of non-volatile RAM that can be used as a burst buffer or as extended memory. To provide a high rate of I/O throughput, the nodes will be connected in a non-blocking fat-tree using a dual-rail Mellanox EDR InfiniBand interconnect. Upon completion, Summit will allow researchers in all fields of science unprecedented access to solving some of the world’s most pressing challenges.« less

Evaluation of the tracing effect of carbon nanoparticle and carbon nanoparticle-epirubicin suspension in axillary lymph node dissection for breast cancer treatment.

PubMed

Du, Junze; Zhang, Yongsong; Ming, Jia; Liu, Jing; Zhong, Ling; Liang, Quankun; Fan, Linjun; Jiang, Jun

2016-06-22

Carbon nanoparticle suspension, using smooth carbon particles at a diameter of 21 nm added with suspending agents, is a stable suspension of carbon pellets of 150 nm in diameter. It is obviously inclined to the lymphatic system. There were some studies reporting that carbon nanoparticles are considered as superior tracers for sentinel lymph nodes because of their stability and operational feasibility. However, there were few study concerns about the potential treatment effect including tracing and local chemotherapeutic effect of carbon nanoparticle-epirubicin suspension on breast cancer with axillary metastasis. In the current study, a randomized controlled analysis was performed to investigate the potential treatment effect of carbon nanoparticle-epirubicin suspension on breast cancer with axillary metastasis. A total of 90 breast cancer patients were randomly divided into three equal groups: control, tracer, and drug-load groups. The control group patients did not receive any lymphatic tracers, the tracer group patients were subcutaneously injected with 1 ml carbon nanoparticle suspension, and the drug-load group patients were injected with 3 ml carbon nanoparticle-epirubicin suspension at four separate sites around the areola 24 h before surgery. Modified radical mastectomy, endoscopic subcutaneous mammary resection plus axillary lymph node dissection, and immediate reconstruction with implants or breast-conserving surgery were performed. The mean number of the dissected lymph nodes per patient was significantly higher in the tracer (21.3 ± 6.1) and drug-load (19.5 ± 3.7) groups than in the control group (16.7 ± 3.4) (P < 0.05). Most lymph nodes in the former two groups were stained black (75.7 and 73.3 %, respectively), but with no significant difference between the groups. Most metastatic lymph nodes were also stained black in the tracer group (68.6 %) and drug-load group (78.1 %) and with no significant difference between the groups (P = 0.198). Microscopic examination revealed that the carbon nanoparticles were localized around or among the cancer cell masses and residues of necrotized cancer cells surrounded by fibroblastic proliferation could be found within the stained lymph nodes in the drug-load group. The majority of axillary lymph nodes were stained black by the suspension of carbon nanoparticles, which helped identify the lymph nodes from the surrounding tissues and avoided aggressive axillary treatment. Thus, a combination therapy of carbon nanoparticles with epirubicin could play an important role in lymphatic chemotherapy without affecting tracing. ChiCTRTRC13003419.

Contact patterning strategies for 32nm and 28nm technology

NASA Astrophysics Data System (ADS)

Morgenfeld, Bradley; Stobert, Ian; An, Ju j.; Kanai, Hideki; Chen, Norman; Aminpur, Massud; Brodsky, Colin; Thomas, Alan

2011-04-01

As 193 nm immersion lithography is extended indefinitely to sustain technology roadmaps, there is increasing pressure to contain escalating lithography costs by identifying patterning solutions that can minimize the use of multiple-pass processes. Contact patterning for the 32/28 nm technology nodes has been greatly facilitated by just-in-time introduction of new process enablers that allow the simultaneous support of flexible foundry-oriented ground rules alongside highperformance technology, while also migrating to a single-pass patterning process. The incorporation of device based performance metrics along with rigorous patterning and structural variability studies were critical in the evaluation of material innovation for improved resolution and CD shrink along with novel data preparation flows utilizing aggressive strategies for SRAF insertion and retargeting.

FDSOI 28nm performances study for RF energy scavenging

NASA Astrophysics Data System (ADS)

Rochefeuille, E.; Alicalapa, F.; Douyère, A.; Vuong, T. P.

2018-03-01

This paper presents a study on an integrated technology: Fully-Depleted-Silicon-On-Insulator (FDSOI) at a 28nm node. FDSOI results are compared to another technology: Complementary-Metal-Oxide-Semiconductor (CMOS) 350nm. The aim of this work was to demonstrate the advantages of using FDSOI technology in RF energy scavenging applications. Characteristics of transistors are pointed out and results showed an improved 22%-output voltage gain for a series rectifier and a 13%-output voltage gain for a Dickson charge pump in FDSOI technology compared to CMOS, for an input voltage and power of 0.5 V and 0 dBm respectively. Those results allowed to prove that FDSOI 28nm is a better technology choice for energy scavenging and low-power applications.

A three degree of freedom manipulator used for store separation wind tunnel test

NASA Astrophysics Data System (ADS)

Wei, R.; Che, B.-H.; Sun, C.-B.; Zhang, J.; Lu, Y.-Q.

2018-06-01

A three degree of freedom manipulator is presented, which is used for store separation wind tunnel test. It is a kind of mechatronics product, have small volume and large moment of torque. The paper researched the design principle of wind tunnel test equipment, also introduced the transmission principle design, physical design, control system design, drive element selection calculation and verification, dynamics computation and static structural computation of the manipulator. To satisfy the design principle of wind tunnel test equipment, some optimization design are made include optimizes the structure of drive element and cable, fairing configuration, overall dimension so that to make the device more suitable for the wind tunnel test. Some tests are made to verify the parameters of the manipulator. The results show that the device improves the load from 100 Nm to 250 Nm, control accuracy from 0.1°to 0.05°in pitch and yaw, also improves load from 10 Nm to 20 Nm, control accuracy from 0.1°to 0.05°in roll.

Status of AlGaN based focal plane array for near UV imaging and strategy to extend this technology to far-UV by substrate removal

NASA Astrophysics Data System (ADS)

Reverchon, Jean-Luc; Gourdel, Yves; Robo, Jean-Alexandre; Truffer, Jean-Patrick; Costard, Eric; Brault, Julien; Duboz, Jean-Yves

2017-11-01

The fast development of nitrides has given the opportunity to investigate AlGaN as a material for ultraviolet detection. Such AlGaN based camera presents an intrinsic spectral selectivity and an extremely low dark current at room temperature. Firstly, we will present results on focal plane array of 320x256 pixels with a pitch of 30μm. The peak responsivity is around 280nm (solar-blind), 310nm and 360nm. These results are obtained in a standard SWIR supply chain (readout circuit, electronics). With the existing near-UV camera grown on sapphire, the short wavelength cutoff is due to a window layer improving the material quality of the active layer. The ultimate shortest wavelength would be 200nm due to sapphire substrate. We present here the ways to transfer the standard design of Schottky photodiodes from sapphire to silicon substrate. We will show the capability to remove the silicon substrate, and etch the window layer in order to extend the band width to lower wavelengths.

Low track height standard-cells enable high-placement density and low-BEOL cost (Conference Presentation)

NASA Astrophysics Data System (ADS)

Debacker, Peter; Matti, Luca; Sherazi, Syed M. Y.; Baert, Rogier; Gerousis, Vassilios; Nauts, Claire; Raghavan, Praveen; Ryckaert, Julien; Kim, Ryoung-Han; Verkest, Diederik

2017-04-01

Making standards cells smaller by lowering the cell height from 7.5 tracks to 6 tracks for the same set of ground rules is an efficient way to reduce area for high density digital IP blocks without increasing wafer cost. Denser cells however also imply a higher pin density and possible more routing congestion because of that. In Place and Route phase, this limits the cell density (a.k.a. utilization) that can be reached without design rule violations. This study shows that 6-track cells (192nm high) and smart routing results in up to 60% lower area than 7.5-track cells in N5 technology. Standard cells have been created for 7.5T and 6T cells in N5 technology (poly pitch 42nm, metal pitch 32nm). The cells use a first horizontal routing layer (Mint) and vertical M1 for 1D intra-cell routing as much as possible. Place and route was performed on an opencores LDPC decoder. Various cell architectures and place and route optimizations are used to scale down the cell area and improve density. Most are not process optimizations, but optimized cell architectures and routing methods: • Open M1: M1 is removed as much as possible. This allows the router to use M1 for inter-cell routing in dense areas. • Routing in Mint: With open M1 the router can also use Mint to extend pins to access nearby free M1 tracks in congested areas. • Outbound rail: The 7.5T cells have inbound VDD/VSS rails in Mint for easy supply tapping. Moving the Mint rail outbound and shared between cells is required to enable lower track height cells. • Vertical Power distribution network (PDN): in 6T cells too many horizontal tracks would be consumed by the wide M2 rail. Mint is used instead combined with a vertical PDN in M1. • Self-Aligned Gate Contact allows to contact the gate on top of active fins. Any Mint track then can contact a gate, reducing cell area considerably. • Partially landing Mint Via trench: In 6T cells, a continuous Via trench underneath the Mint rail is used. This via partially lands on M0A to relax tip-to-tip requirements. • Relaxed M2 pitch: When pin access is handled in Mint and M1, this allows for a relaxed M2 pitch (48nm) with cheaper double patterning. To avoid horizontal routing layer congestion with the smaller cells, the 6T cells depend on the vertical PDN and open M1 to improve routability and pin access. Already in 7.5T cells, open M1 and vertical PDN help to improve routable utilization from 50% with closed M1 to 85% maximum. Moving to 6T cells, the combination of reduced cell area and high 85% utilization of result in a 60% area reduction vs the original 7.5T cells. We have shown that combining 6-track cells and smart routing results in up to 60% lower area than 7.5-track cells in N5 technology. Open M1 and vertical PDN are main area boosters for any cell architecture, boosting utilization from 50% to 85% already for the 7.5T cells.

Adaptive pixel-super-resolved lensfree in-line digital holography for wide-field on-chip microscopy.

PubMed

Zhang, Jialin; Sun, Jiasong; Chen, Qian; Li, Jiaji; Zuo, Chao

2017-09-18

High-resolution wide field-of-view (FOV) microscopic imaging plays an essential role in various fields of biomedicine, engineering, and physical sciences. As an alternative to conventional lens-based scanning techniques, lensfree holography provides a new way to effectively bypass the intrinsical trade-off between the spatial resolution and FOV of conventional microscopes. Unfortunately, due to the limited sensor pixel-size, unpredictable disturbance during image acquisition, and sub-optimum solution to the phase retrieval problem, typical lensfree microscopes only produce compromised imaging quality in terms of lateral resolution and signal-to-noise ratio (SNR). Here, we propose an adaptive pixel-super-resolved lensfree imaging (APLI) method which can solve, or at least partially alleviate these limitations. Our approach addresses the pixel aliasing problem by Z-scanning only, without resorting to subpixel shifting or beam-angle manipulation. Automatic positional error correction algorithm and adaptive relaxation strategy are introduced to enhance the robustness and SNR of reconstruction significantly. Based on APLI, we perform full-FOV reconstruction of a USAF resolution target (~29.85 mm 2 ) and achieve half-pitch lateral resolution of 770 nm, surpassing 2.17 times of the theoretical Nyquist-Shannon sampling resolution limit imposed by the sensor pixel-size (1.67µm). Full-FOV imaging result of a typical dicot root is also provided to demonstrate its promising potential applications in biologic imaging.

Novel contact hole reticle design for enhanced lithography process window in IC manufacturing

NASA Astrophysics Data System (ADS)

Chang, Chung-Hsing

2005-01-01

For 90nm node generation, 65nm, and beyond, dark field mask types such as contact-hole, via, and trench patterns that all are very challenging to print with satisfactory process windows for day-to-day lithography manufacturing. Resolution enhancement technology (RET) masks together with ArF high numerical aperture (NA) scanners have been recognized as the inevitable choice of method for 65nm node manufacturing. Among RET mask types, the alternating phase shifting mask (AltPSM) is one of the well-known strong enhancement techniques. However AltPSM can have a very strong optical proximity effect that comes with the use of small on-axis illumination sigma setting. For very dense contact features, it may be possible for AltPSM to overcome the phase conflict by limiting the mask design rules. But it is not feasible to resolve the inherent phase conflict for the semi-dense, semi-isolated and isolated contact areas. Hence the adoption of this strong enhancement technique for dark filed mask types in today"s IC manufacturing has been very limited. In this paper, we present a novel yet a very powerful design method to achieve contact and via masks printing for 90nm, 65nm, and beyond. We name our new mask design as: Novel Improved Contact-hole pattern Exposure PSM (NICE PSM) with off-axis illumination, such as QUASAR. This RET masks design can enhance the process window of isolated, semi-isolated contact hole and via hole patterns. The main concepts of NICE PSM with QUASAR off-axis illumination are analogous to the Super-FLEX pupil filter technology.

Novel contact hole reticle design for enhanced lithography process window in IC manufacturing

NASA Astrophysics Data System (ADS)

Chang, Chung-Hsing

2004-10-01

For 90nm node generation, 65nm, and beyond, dark field mask types such as contact-hole, via, and trench patterns that all are very challenging to print with satisfactory process windows for day-to-day lithography manufacturing. Resolution enhancement technology (RET) masks together with ArF high numerical aperture (NA) scanners have been recognized as the inevitable choice of method for 65nm node manufacturing. Among RET mask types, the alternating phase shifting mask (AltPSM) is one of the well-known strong enhancement techniques. However, AltPSM can have a very strong optical proximity effect that comes with the use of small on-axis illumination sigma setting. For very dense contact features, it may be possible for AltPSM to overcome the phase conflict by limiting the mask design rules. But it is not feasible to resolve the inherent phase conflict for the semi-dense, semi-isolated and isolated contact areas. Hence the adoption of this strong enhancement technique for dark filed mask types in today"s IC manufacturing has been very limited. In this paper, we report a novel yet a very powerful design method to achieve contact and via masks printing for 90nm, 65nm, and beyond. We name our new mask design as: Novel Improved Contact-hole pattern Exposure PSM (NICE PSM) with off-axis illumination, such as QUASAR. This RET masks design can enhance the process window of isolated, semi-isolated contact hole and via hole patterns. The main concepts of NICE PSM with QUASAR off-axis illumination are analogous to the Super-FLEX pupil filter technology.

Soft error rate simulation and initial design considerations of neutron intercepting silicon chip (NISC)

NASA Astrophysics Data System (ADS)

Celik, Cihangir

Advances in microelectronics result in sub-micrometer electronic technologies as predicted by Moore's Law, 1965, which states the number of transistors in a given space would double every two years. The most available memory architectures today have submicrometer transistor dimensions. The International Technology Roadmap for Semiconductors (ITRS), a continuation of Moore's Law, predicts that Dynamic Random Access Memory (DRAM) will have an average half pitch size of 50 nm and Microprocessor Units (MPU) will have an average gate length of 30 nm over the period of 2008-2012. Decreases in the dimensions satisfy the producer and consumer requirements of low power consumption, more data storage for a given space, faster clock speed, and portability of integrated circuits (IC), particularly memories. On the other hand, these properties also lead to a higher susceptibility of IC designs to temperature, magnetic interference, power supply, and environmental noise, and radiation. Radiation can directly or indirectly affect device operation. When a single energetic particle strikes a sensitive node in the micro-electronic device, it can cause a permanent or transient malfunction in the device. This behavior is called a Single Event Effect (SEE). SEEs are mostly transient errors that generate an electric pulse which alters the state of a logic node in the memory device without having a permanent effect on the functionality of the device. This is called a Single Event Upset (SEU) or Soft Error . Contrary to SEU, Single Event Latchup (SEL), Single Event Gate Rapture (SEGR), or Single Event Burnout (SEB) they have permanent effects on the device operation and a system reset or recovery is needed to return to proper operations. The rate at which a device or system encounters soft errors is defined as Soft Error Rate (SER). The semiconductor industry has been struggling with SEEs and is taking necessary measures in order to continue to improve system designs in nano-scale technologies. Prevention of SEEs has been studied and applied in the semiconductor industry by including radiation protection precautions in the system architecture or by using corrective algorithms in the system operation. Decreasing 10B content (20%of natural boron) in the natural boron of Borophosphosilicate glass (BPSG) layers that are conventionally used in the fabrication of semiconductor devices was one of the major radiation protection approaches for the system architecture. Neutron interaction in the BPSG layer was the origin of the SEEs because of the 10B (n,alpha) 7Li reaction products. Both of the particles produced have the capability of ionization in the silicon substrate region, whose thickness is comparable to the ranges of these particles. Using the soft error phenomenon in exactly the opposite manner of the semiconductor industry can provide a new neutron detection system based on the SERs in the semiconductor memories. By investigating the soft error mechanisms in the available semiconductor memories and enhancing the soft error occurrences in these devices, one can convert all memory using intelligent systems into portable, power efficient, directiondependent neutron detectors. The Neutron Intercepting Silicon Chip (NISC) project aims to achieve this goal by introducing 10B-enriched BPSG layers to the semiconductor memory architectures. This research addresses the development of a simulation tool, the NISC Soft Error Analysis Tool (NISCSAT), for soft error modeling and analysis in the semiconductor memories to provide basic design considerations for the NISC. NISCSAT performs particle transport and calculates the soft error probabilities, or SER, depending on energy depositions of the particles in a given memory node model of the NISC. Soft error measurements were performed with commercially available, off-the-shelf semiconductor memories and microprocessors to observe soft error variations with the neutron flux and memory supply voltage. Measurement results show that soft errors in the memories increase proportionally with the neutron flux, whereas they decrease with increasing the supply voltages. NISC design considerations include the effects of device scaling, 10B content in the BPSG layer, incoming neutron energy, and critical charge of the node for this dissertation. NISCSAT simulations were performed with various memory node models to account these effects. Device scaling simulations showed that any further increase in the thickness of the BPSG layer beyond 2 mum causes self-shielding of the incoming neutrons due to the BPSG layer and results in lower detection efficiencies. Moreover, if the BPSG layer is located more than 4 mum apart from the depletion region in the node, there are no soft errors in the node due to the fact that both of the reaction products have lower ranges in the silicon or any possible node layers. Calculation results regarding the critical charge indicated that the mean charge deposition of the reaction products in the sensitive volume of the node is about 15 fC. It is evident that the NISC design should have a memory architecture with a critical charge of 15 fC or less to obtain higher detection efficiencies. Moreover, the sensitive volume should be placed in close proximity to the BPSG layers so that its location would be within the range of alpha and 7Li particles. Results showed that the distance between the BPSG layer and the sensitive volume should be less than 2 mum to increase the detection efficiency of the NISC. Incoming neutron energy was also investigated by simulations and the results obtained from these simulations showed that NISC neutron detection efficiency is related with the neutron cross-sections of 10B (n,alpha) 7Li reaction, e.g., ratio of the thermal (0.0253 eV) to fast (2 MeV) neutron detection efficiencies is approximately equal to 8000:1. Environmental conditions and their effects on the NISC performance were also studied in this research. Cosmic rays were modeled and simulated via NISCSAT to investigate detection reliability of the NISC. Simulation results show that cosmic rays account for less than 2 % of the soft errors for the thermal neutron detection. On the other hand, fast neutron detection by the NISC, which already has a poor efficiency due to the low neutron cross-sections, becomes almost impossible at higher altitudes where the cosmic ray fluxes and their energies are higher. NISCSAT simulations regarding soft error dependency of the NISC for temperature and electromagnetic fields show that there are no significant effects in the NISC detection efficiency. Furthermore, the detection efficiency of the NISC decreases with both air humidity and use of moderators since the incoming neutrons scatter away before reaching the memory surface.

Cross-Disciplinary Analysis of Lymph Node Classification in Lung Cancer on CT Scanning.

PubMed

El-Sherief, Ahmed H; Lau, Charles T; Obuchowski, Nancy A; Mehta, Atul C; Rice, Thomas W; Blackstone, Eugene H

2017-04-01

Accurate and consistent regional lymph node classification is an important element in the staging and multidisciplinary management of lung cancer. Regional lymph node definition sets-lymph node maps-have been created to standardize regional lymph node classification. In 2009, the International Association for the Study of Lung Cancer (IASLC) introduced a lymph node map to supersede all preexisting lymph node maps. Our aim was to study if and how lung cancer specialists apply the IASLC lymph node map when classifying thoracic lymph nodes encountered on CT scans during lung cancer staging. From April 2013 through July 2013, invitations were distributed to all members of the Fleischner Society, Society of Thoracic Radiology, General Thoracic Surgical Club, and the American Association of Bronchology and Interventional Pulmonology to participate in an anonymous online image-based and text-based 20-question survey regarding lymph node classification for lung cancer staging on CT imaging. Three hundred thirty-seven people responded (approximately 25% participation). Respondents consisted of self-reported thoracic radiologists (n = 158), thoracic surgeons (n = 102), and pulmonologists who perform endobronchial ultrasonography (n = 77). Half of the respondents (50%; 95% CI, 44%-55%) reported using the IASLC lymph node map in daily practice, with no significant differences between subspecialties. A disparity was observed between the IASLC definition sets and their interpretation and application on CT scans, in particular for lymph nodes near the thoracic inlet, anterior to the trachea, anterior to the tracheal bifurcation, near the ligamentum arteriosum, between the bronchus intermedius and esophagus, in the internal mammary space, and adjacent to the heart. Use of older lymph node maps and inconsistencies in interpretation and application of definitions in the IASLC lymph node map may potentially lead to misclassification of stage and suboptimal management of lung cancer in some patients. Published by Elsevier Inc.

Latest evolution in a 300mm graphoepitaxy pilot line flow for L/S applications

NASA Astrophysics Data System (ADS)

Claveau, G.; Argoud, M.; Pimenta-Barros, P.; Chamiot-Maitral, G.; Tiron, R.; Chevalier, X.; Navarro, C.

2017-03-01

Directed Self Assembly (DSA) of block-copolymers (BCPs) used as a complementary technique to the 193nm immersion lithography has demonstrated sub-10nm node applications in both via and line/space patterning. We propose however to study the performance of graphoepitaxy which allows DSA with thicker initial BCP layer, higher multiplication factors and stronger orientation control of lamellae. The aim of this work is to use the 300mm pilot line available at LETI and Arkema's advanced materials to evaluate the performances of a novel graphoepitaxy process based on the work on a 38nm period lamellar PS-b-PMMA (L38) reported before.

Wide spectral range multiple orders and half-wave achromatic phase retarders fabricated from two lithium tantalite single crystal plates

NASA Astrophysics Data System (ADS)

Emam-Ismail, M.

2015-11-01

In a broad spectral range (300-2500 nm), we report the use of channeled spectra formed from the interference of polarized white light to extract the dispersion of the phase birefringence Δnp(λ) of the x- and y-cuts of lithium tantalite (LiTaO3:LT) plates. A new method named as wavenumber difference method is used to extract the spectral behavior of the phase birefringence of the x- and y- cuts of LT plates. The correctness of the obtained birefringence data is confirmed by using Jones vector method through recalculating the plates thicknesses. The spectral variation of the phase birefringence Δnp(λ) of the x- and y-cuts of LT plates is fitted to Cauchy dispersion function with relative error for both x- and y-cuts of order 2.4×10-4. The group birefringence dispersion Δng (λ) of the x- and y-cuts of LT plates is also calculated and fitted to Ghosh dispersion function with relative error for both x- and y-cuts of order 2.83×10-4. Furthermore, the phase retardation introduced by the x- and y-cuts of LT plates is also calculated. It is found that the amount of phase retardation confirms that the x- and y-cuts of LT plates can act as a multiple order half- and quarter-wave plates working at many different wavelengths through the spectral range 300-2500 nm. For the x- and y-cuts of LT plates, a large difference between group and phase birefringence is observed at a short wavelength (λ=300 nm); while such difference progressively diminished at longer wavelength (λ=2000 nm). In the near infrared region (NIR) region (700-2500 nm), a broad spectral full width at half maximum (FWHM) is observed for either x- or y-cut of LT plate which can act as if it is working as a zero order wave plate. Finally, an achromatic half-wave plate working at 598 nm and covering a wide spectral range (300-900 nm) is demonstrated experimentally by combining both x- and y-cuts of LT plates.

Poster — Thur Eve — 70: Automatic lung bronchial and vessel bifurcations detection algorithm for deformable image registration assessment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Labine, Alexandre; Carrier, Jean-François; Bedwani, Stéphane

2014-08-15

Purpose: To investigate an automatic bronchial and vessel bifurcations detection algorithm for deformable image registration (DIR) assessment to improve lung cancer radiation treatment. Methods: 4DCT datasets were acquired and exported to Varian treatment planning system (TPS) EclipseTM for contouring. The lungs TPS contour was used as the prior shape for a segmentation algorithm based on hierarchical surface deformation that identifies the deformed lungs volumes of the 10 breathing phases. Hounsfield unit (HU) threshold filter was applied within the segmented lung volumes to identify blood vessels and airways. Segmented blood vessels and airways were skeletonised using a hierarchical curve-skeleton algorithm basedmore » on a generalized potential field approach. A graph representation of the computed skeleton was generated to assign one of three labels to each node: the termination node, the continuation node or the branching node. Results: 320 ± 51 bifurcations were detected in the right lung of a patient for the 10 breathing phases. The bifurcations were visually analyzed. 92 ± 10 bifurcations were found in the upper half of the lung and 228 ± 45 bifurcations were found in the lower half of the lung. Discrepancies between ten vessel trees were mainly ascribed to large deformation and in regions where the HU varies. Conclusions: We established an automatic method for DIR assessment using the morphological information of the patient anatomy. This approach allows a description of the lung's internal structure movement, which is needed to validate the DIR deformation fields for accurate 4D cancer treatment planning.« less

Tuning quadratic nonlinear photonic crystal fibers for zero group-velocity mismatch.

PubMed

Bache, Morten; Nielsen, Hanne; Laegsgaard, Jesper; Bang, Ole

2006-06-01

We consider an index-guiding silica photonic crystal fiber with a triangular hole pattern and a periodically poled quadratic nonlinearity. By tuning the pitch and the relative hole size, second-harmonic generation with zero group-velocity mismatch is found for any fundamental wavelength above 780 nm. The nonlinear strength is optimized when the fundamental has maximum confinement in the core. The conversion bandwidth allows for femtosecond-pulse conversion, and 4%-180%W(-1)cm(-2) relative efficiencies were found.

Spectral linewidth preservation in parametric frequency combs seeded by dual pumps.

PubMed

Tong, Zhi; Wiberg, Andreas O J; Myslivets, Evgeny; Kuo, Bill P P; Alic, Nikola; Radic, Stojan

2012-07-30

We demonstrate new technique for generation of programmable-pitch, wideband frequency combs with low phase noise. The comb generation was achieved using cavity-less, multistage mixer driven by two tunable continuous-wave pump seeds. The approach relies on phase-correlated continuous-wave pumps in order to cancel spectral linewidth broadening inherent to parametric comb generation. Parametric combs with over 200-nm bandwidth were obtained and characterized with respect to phase noise scaling to demonstrate linewidth preservation over 100 generated tones.

Interaction between Brash Ice and Boat Propulsion Systems

DTIC Science & Technology

2014-02-01

1 15 Data Acquisition/Instrumentation Data Acquisition An Astro -Med Inc. TMX portable Data recorder was used to capture all the data during the...Technology Inc. (AMTI) underwater MC37 transducer. The range for loads in Fx , Fy, and Fz was 1,112 N; the range for moment in My and Mz was 85 N-M and...mounting bracket. Positive force ( Fx ) is recorded as a load pushing on the bow of the boat towards the stern. Pitch and roll of the boat was measured

Design and laser damage properties of a dichroic beam combiner coating for 22.5-deg incidence and S polarization with high transmission at 527 nm and high reflection at 1054 nm

DOE PAGES

Bellum, John C.; Field, Ella S.; Kletecka, Damon E.; ...

2016-10-12

We designed a dichroic beam combiner coating with 11 HfO 2/SiO 2 layer pairs and deposited it on a large substrate. It provides high transmission (HT) at 527 nm and high reflection (HR) at 1054 nm for a 22.5-deg angle of incidence (AOI), S polarization (Spol), and uses near half-wave layer thicknesses for HT at 527 nm, modified for HR at 1054 nm. The two options for the beam combiner each require that a high intensity beam be incident on the coating from within the substrate (from glass). We analyze the laser-induced damage threshold (LIDT) differences between the two optionsmore » in terms of the 527- and 1054-nm E-field behaviors for air → coating and glass → coating incidences. This indicates that LIDTs should be higher for air → coating than for glass → coating incidence. LIDT tests at the use AOI, Spol with ns pulses at 532 and 1064 nm confirm this, with glass → coating LIDTs about half that of air → coating LIDTs. Lastly, these results clearly indicate that the best beam combiner option is for the high intensity 527 and 1054 nm beams to be incident on the coating from air and glass, respectively.« less

Design and laser damage properties of a dichroic beam combiner coating for 22.5-deg incidence and S polarization with high transmission at 527 nm and high reflection at 1054 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bellum, John C.; Field, Ella S.; Kletecka, Damon E.

We designed a dichroic beam combiner coating with 11 HfO 2/SiO 2 layer pairs and deposited it on a large substrate. It provides high transmission (HT) at 527 nm and high reflection (HR) at 1054 nm for a 22.5-deg angle of incidence (AOI), S polarization (Spol), and uses near half-wave layer thicknesses for HT at 527 nm, modified for HR at 1054 nm. The two options for the beam combiner each require that a high intensity beam be incident on the coating from within the substrate (from glass). We analyze the laser-induced damage threshold (LIDT) differences between the two optionsmore » in terms of the 527- and 1054-nm E-field behaviors for air → coating and glass → coating incidences. This indicates that LIDTs should be higher for air → coating than for glass → coating incidence. LIDT tests at the use AOI, Spol with ns pulses at 532 and 1064 nm confirm this, with glass → coating LIDTs about half that of air → coating LIDTs. Lastly, these results clearly indicate that the best beam combiner option is for the high intensity 527 and 1054 nm beams to be incident on the coating from air and glass, respectively.« less

Uncooled 17 μm ¼ VGA IRFPA development for compact and low power systems

NASA Astrophysics Data System (ADS)

Robert, P.; Tissot, J.; Pochic, D.; Gravot, V.; Bonnaire, F.; Clerambault, H.; Durand, A.; Tinnes, S.

2012-11-01

The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon enables ULIS to develop ¼ VGA IRFPA formats with 17μm pixel-pitch to enable the development of small power, small weight (SWAP) and high performance IR systems. ROIC architecture will be described where innovations are widely on-chip implemented to enable an easier operation by the user. The detector configuration (integration time, windowing, gain, scanning direction…), is driven by a standard I²C link. Like most of the visible arrays, the detector adopts the HSYNC/VSYNC free-run mode of operation driven with only one master clock (MC) supplied to the ROIC which feeds back pixel, line and frame synchronizations. On-chip PROM memory for customer operational condition storage is available for detector characteristics. Low power consumption has been taken into account and less than 60 mW is possible in analog mode at 60 Hz and < 175 mW in digital mode (14 bits). A wide electrical dynamic range (2.4V) is maintained despite the use of advanced CMOS node. The specific appeal of this unit lies in the high uniformity and easy operation it provides. The reduction of the pixel-pitch turns this TEC-less ¼ VGA array into a product well adapted for high resolution and compact systems. NETD of 35 mK and thermal time constant of 10 ms have been measured leading to 350 mK.ms figure of merit. We insist on NETD trade-off with wide thermal dynamic range, as well as the high characteristics uniformity and pixel operability, achieved thanks to the mastering of the amorphous silicon technology coupled with the ROIC design. This technology node associated with advanced packaging technique, paves the way to compact low power system.

Easy to use uncooled ¼ VGA 17 µm FPA development for high performance compact and low-power systems

NASA Astrophysics Data System (ADS)

Robert, P.; Tissot, JL.; Pochic, D.; Gravot, V.; Bonnaire, F.; Clerambault, H.; Durand, A.; Tinnes, S.

2012-06-01

The high level of accumulated expertise by ULIS and CEA/LETI on uncooled microbolometers made from amorphous silicon enables ULIS to develop ¼ VGA IRFPA formats with 17μm pixel-pitch to enable the development of small power, small weight (SWAP) and high performance IR systems. ROIC architecture will be described where innovations are widely on-chip implemented to enable an easier operation by the user. The detector configuration (integration time, windowing, gain, scanning direction...), is driven by a standard I²C link. Like most of the visible arrays, the detector adopts the HSYNC/VSYNC free-run mode of operation driven with only one master clock (MC) supplied to the ROIC which feeds back pixel, line and frame synchronizations. On-chip PROM memory for customer operational condition storage is available for detector characteristics. Low power consumption has been taken into account and less than 60 mW is possible in analog mode at 60 Hz and < 175 mW in digital mode (14 bits). A wide electrical dynamic range (2.4V) is maintained despite the use of advanced CMOS node. The specific appeal of this unit lies in the high uniformity and easy operation it provides. The reduction of the pixel-pitch turns this TEC-less ¼ VGA array into a product well adapted for high resolution and compact systems. NETD of 35 mK and thermal time constant of 10 ms have been measured leading to 350 mK.ms figure of merit. We insist on NETD trade-off with wide thermal dynamic range, as well as the high characteristics uniformity and pixel operability, achieved thanks to the mastering of the amorphous silicon technology coupled with the ROIC design. This technology node associated with advanced packaging technique, paves the way to compact low power system.

Advancements of ultra-high peak power laser diode arrays

NASA Astrophysics Data System (ADS)

Crawford, D.; Thiagarajan, P.; Goings, J.; Caliva, B.; Smith, S.; Walker, R.

2018-02-01

Enhancements of laser diode epitaxy in conjunction with process and packaging improvements have led to the availability of 1cm bars capable of over 500W peak power at near-infrared wavelengths (770nm to 1100nm). Advances in cooler design allow for multi-bar stacks with bar-to-bar pitches as low as 350μm and a scalable package architecture enabled a single diode assembly with total peak powers of over 1MegaWatt of peak power. With the addition of micro-optics, overall array brightness greater than 10kW/cm2 was achieved. Performance metrics of barbased diode lasers specifically engineered for high peak power and high brightness at wavelengths and pulse conditions commonly used to pump a variety of fiber and solid-state materials are presented.

Direct imprinting on chalcogenide glass and fabrication of infrared wire-grid polarizer

NASA Astrophysics Data System (ADS)

Yamada, Itsunari; Yamashita, Naoto; Einishi, Toshihiko; Saito, Mitsunori; Fukumi, Kouhei; Nishii, Junji

2013-05-01

Infrared wire-grid polarizers were fabricated consisting of a 500-nm pitch Al grating on a low toxic chalcogenide glass (Sb-Ge-Sn-S system) using the direct imprinting of subwavelength grating followed by a deposition of Al metal by thermal evaporation. To fabricate the subwavelength grating on a chalcogenide glass more easily, the sharp grating was formed on the mold surface. The fabricated polarizer with Al thickness of 130 nm exhibited a polarization function with a transverse magnetic transmittance greater than 60% in the 5-9-μm wavelength range, and an extinction ratio greater than 20 dB in the 4-11-μm wavelength range. The polarizer can be fabricated at lower costs and simpler fabrication processes compared to conventional infrared polarizers.

Performance of ASML YieldStar μDBO overlay targets for advanced lithography nodes C028 and C014 overlay process control

NASA Astrophysics Data System (ADS)

Blancquaert, Yoann; Dezauzier, Christophe; Depre, Jerome; Miqyass, Mohamed; Beltman, Jan

2013-04-01

Continued tightening of overlay control budget in semiconductor lithography drives the need for improved metrology capabilities. Aggressive improvements are needed for overlay metrology speed, accuracy and precision. This paper is dealing with the on product metrology results of a scatterometry based platform showing excellent production results on resolution, precision, and tool matching for overlay. We will demonstrate point to point matching between tool generations as well as between target sizes and types. Nowadays, for the advanced process nodes a lot of information is needed (Higher order process correction, Reticle fingerprint, wafer edge effects) to quantify process overlay. For that purpose various overlay sampling schemes are evaluated: ultra- dense, dense and production type. We will show DBO results from multiple target type and shape for on product overlay control for current and future node down to at least 14 nm node. As overlay requirements drive metrology needs, we will evaluate if the new metrology platform meets the overlay requirements.

HEAD MOVEMENT DURING WALKING IN THE CAT

PubMed Central

ZUBAIR, HUMZA N.; BELOOZEROVA, IRINA N.; SUN, HAI; MARLINSKI, VLADIMIR

2016-01-01

Knowledge of how the head moves during locomotion is essential for understanding how locomotion is controlled by sensory systems of the head. We have analyzed head movements of the cat walking along a straight flat pathway in the darkness and light. We found that cats' head left-right translations, and roll and yaw rotations oscillated once per stride, while fore-aft and vertical translations, and pitch rotations oscillated twice. The head reached its highest vertical positions during second half of each forelimb swing, following maxima of the shoulder/trunk by 20–90°. Nose-up rotation followed head upward translation by another 40–90° delay. The peak-to-peak amplitude of vertical translation was ~1.5 cm and amplitude of pitch rotation was ~3°. Amplitudes of lateral translation and roll rotation were ~1 cm and 1.5–3°, respectively. Overall, cats' heads were neutral in roll and 10–30° nose-down, maintaining horizontal semicircular canals and utriculi within 10° of the earth horizontal. The head longitudinal velocity was 0.5–1 m/s, maximal upward and downward linear velocities were ~0.05 and ~0.1 m/s, respectively, and maximal lateral velocity was ~0.05 m/s. Maximal velocities of head pitch rotation were 20–50 °/s. During walking in light, cats stood 0.3–0.5 cm taller and held their head 0.5–2 cm higher than in darkness. Forward acceleration was 25–100% higher and peak-to-peak amplitude of head pitch oscillations was ~20 °/s larger. We concluded that, during walking, the head of the cat is held actively. Reflexes appear to play only a partial role in determining head movement, and vision might further diminish their role. PMID:27339731

A Conditioned Behavioral Paradigm for Assessing Onset and Lasting Tinnitus in Rats

PubMed Central

Pace, Edward; Luo, Hao; Bobian, Michael; Panekkad, Ajay; Zhang, Xueguo; Zhang, Huiming; Zhang, Jinsheng

2016-01-01

Numerous behavioral paradigms have been developed to assess tinnitus-like behavior in animals. Nevertheless, they are often limited by prolonged training requirements, as well as an inability to simultaneously assess onset and lasting tinnitus behavior, tinnitus pitch or duration, or tinnitus presence without grouping data from multiple animals or testing sessions. To enhance behavioral testing of tinnitus, we developed a conditioned licking suppression paradigm to determine the pitch(s) of both onset and lasting tinnitus-like behavior within individual animals. Rats learned to lick water during broadband or narrowband noises, and to suppress licking to avoid footshocks during silence. After noise exposure, rats significantly increased licking during silent trials, suggesting onset tinnitus-like behavior. Lasting tinnitus-behavior, however, was exhibited in about half of noise-exposed rats through 7 weeks post-exposure tested. Licking activity during narrowband sound trials remained unchanged following noise exposure, while ABR hearing thresholds fully recovered and were comparable between tinnitus(+) and tinnitus(-) rats. To assess another tinnitus inducer, rats were injected with sodium salicylate. They demonstrated high pitch tinnitus-like behavior, but later recovered by 5 days post-injection. Further control studies showed that 1): sham noise-exposed rats tested with footshock did not exhibit tinnitus-like behavior, and 2): noise-exposed or sham rats tested without footshocks showed no fundamental changes in behavior compared to those tested with shocks. Together, these results demonstrate that this paradigm can efficiently test the development of noise- and salicylate-induced tinnitus behavior. The ability to assess tinnitus individually, over time, and without averaging data enables us to realistically address tinnitus in a clinically relevant way. Thus, we believe that this optimized behavioral paradigm will facilitate investigations into the mechanisms of tinnitus and development of effective treatments. PMID:27835697

Quantifying the Precipitation Loss of Radiation Belt Electrons during a Rapid Dropout Event

NASA Astrophysics Data System (ADS)

Pham, K. H.; Tu, W.; Xiang, Z.

2017-12-01

Relativistic electron flux in the radiation belt can drop by orders of magnitude within the timespan of hours. In this study, we used the drift-diffusion model that includes azimuthal drift and pitch angle diffusion of electrons to simulate low-altitude electron distribution observed by POES/MetOp satellites for rapid radiation belt electron dropout event occurring on May 1, 2013. The event shows fast dropout of MeV energy electrons at L>4 over a few hours, observed by the Van Allen Probes mission. By simulating the electron distributions observed by multiple POES satellites, we resolve the precipitation loss with both high spatial and temporal resolution and a range of energies. We estimate the pitch angle diffusion coefficients as a function of energy, pitch angle, and L-shell, and calculate corresponding electron lifetimes during the event. The simulation results show fast electron precipitation loss at L>4 during the electron dropout, with estimated electron lifetimes on the order of half an hour for MeV energies. The electron loss rate show strong energy dependence with faster loss at higher energies, which suggest that this dropout event is dominated by quick and localized scattering process that prefers higher energy electrons. The estimated pitch angle diffusion rates from the model are then compared with in situ wave measurements from Van Allen Probes to uncover the underlying wave-particle-interaction mechanisms that are responsible for the fast electron precipitation. Comparing the resolved precipitation loss with the observed electron dropouts at high altitudes, our results will suggest the relative role of electron precipitation loss and outward radial diffusion to the radiation belt dropouts during storm and non-storm times, in addition to its energy and L dependence.

Temporal resolution measurement of 128-slice dual source and 320-row area detector computed tomography scanners in helical acquisition mode using the impulse method.

PubMed

Hara, Takanori; Urikura, Atsushi; Ichikawa, Katsuhiro; Hoshino, Takashi; Nishimaru, Eiji; Niwa, Shinji

2016-04-01

To analyse the temporal resolution (TR) of modern computed tomography (CT) scanners using the impulse method, and assess the actual maximum TR at respective helical acquisition modes. To assess the actual TR of helical acquisition modes of a 128-slice dual source CT (DSCT) scanner and a 320-row area detector CT (ADCT) scanner, we assessed the TRs of various acquisition combinations of a pitch factor (P) and gantry rotation time (R). The TR of the helical acquisition modes for the 128-slice DSCT scanner continuously improved with a shorter gantry rotation time and greater pitch factor. However, for the 320-row ADCT scanner, the TR with a pitch factor of <1.0 was almost equal to the gantry rotation time, whereas with pitch factor of >1.0, it was approximately one half of the gantry rotation time. The maximum TR values of single- and dual-source helical acquisition modes for the 128-slice DSCT scanner were 0.138 (R/P=0.285/1.5) and 0.074s (R/P=0.285/3.2), and the maximum TR values of the 64×0.5- and 160×0.5-mm detector configurations of the helical acquisition modes for the 320-row ADCT scanner were 0.120 (R/P=0.275/1.375) and 0.195s (R/P=0.3/0.6), respectively. Because the TR of a CT scanner is not accurately depicted in the specifications of the individual scanner, appropriate acquisition conditions should be determined based on the actual TR measurement. Copyright © 2016 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

Speaker-Sex Discrimination for Voiced and Whispered Vowels at Short Durations

PubMed Central

2016-01-01

Whispered vowels, produced with no vocal fold vibration, lack the periodic temporal fine structure which in voiced vowels underlies the perceptual attribute of pitch (a salient auditory cue to speaker sex). Voiced vowels possess no temporal fine structure at very short durations (below two glottal cycles). The prediction was that speaker-sex discrimination performance for whispered and voiced vowels would be similar for very short durations but, as stimulus duration increases, voiced vowel performance would improve relative to whispered vowel performance as pitch information becomes available. This pattern of results was shown for women’s but not for men’s voices. A whispered vowel needs to have a duration three times longer than a voiced vowel before listeners can reliably tell whether it’s spoken by a man or woman (∼30 ms vs. ∼10 ms). Listeners were half as sensitive to information about speaker-sex when it is carried by whispered compared with voiced vowels. PMID:27757218

Dielectric Barrier Discharge based Mercury-free plasma UV-lamp for efficient water disinfection.

PubMed

Prakash, Ram; Hossain, Afaque M; Pal, U N; Kumar, N; Khairnar, K; Mohan, M Krishna

2017-12-12

A structurally simple dielectric barrier discharge based mercury-free plasma UV-light source has been developed for efficient water disinfection. The source comprises of a dielectric barrier discharge arrangement between two co-axial quartz tubes with an optimized gas gap. The outer electrode is an aluminium baked foil tape arranged in a helical form with optimized pitch, while the inner electrode is a hollow aluminium metallic rod, hermetically sealed. Strong bands peaking at wavelengths 172 nm and 253 nm, along with a weak band peaking at wavelength 265 nm have been simultaneously observed due to plasma radiation from the admixture of xenon and iodine gases. The developed UV source has been used for bacterial deactivation studies using an experimental setup that is an equivalent of the conventional house-hold water purifier system. Deactivation studies for five types of bacteria, i.e., E. coli, Shigella boydii, Vibrio, Coliforms and Fecal coliform have been demonstrated with 4 log reductions in less than ten seconds.

Fabrication of Ordered Blue Nanostructure by Anodization of an Aluminum Plate

NASA Astrophysics Data System (ADS)

Kurashima, Yuichi; Yokota, Yoshihiko; Miyamoto, Iwao; Itatani, Taro

2007-03-01

Colors in organisms are created by chemical interactions of molecular pigments and by optical interactions of incident light with biological nanostructures. The latter classes are called structural colors and form an important component of the phenotypes of many animals and even some plants. In this paper, we report on the fabrication of an ordered blue nanostructure by the anodization of an Al plate. In the fabrication of such an ordered nanostructure by the anodization of an Al plate, ordered nanostructures with a pitch and an alumina thickness of approximately 100 nm were produced on the Al plate. The ordered nanostructures on the Al plate showed no colors. However, an ordered nanostructure deposited with a Pt thin film with a thickness of approximately 10 nm showed a blue reflection with a peak reflectivity of approximately 370 nm. We conclude that this blue nanostructure on the Al plate is caused by an interference between the Al surface and the Pt surface.

Time-resolved optical spectrometer based on a monolithic array of high-precision TDCs and SPADs

NASA Astrophysics Data System (ADS)

Tamborini, Davide; Markovic, Bojan; Di Sieno, Laura; Contini, Davide; Bassi, Andrea; Tisa, Simone; Tosi, Alberto; Zappa, Franco

2013-12-01

We present a compact time-resolved spectrometer suitable for optical spectroscopy from 400 nm to 1 μm wavelengths. The detector consists of a monolithic array of 16 high-precision Time-to-Digital Converters (TDC) and Single-Photon Avalanche Diodes (SPAD). The instrument has 10 ps resolution and reaches 70 ps (FWHM) timing precision over a 160 ns full-scale range with a Differential Non-Linearity (DNL) better than 1.5 % LSB. The core of the spectrometer is the application-specific integrated chip composed of 16 pixels with 250 μm pitch, containing a 20 μm diameter SPAD and an independent TDC each, fabricated in a 0.35 μm CMOS technology. In front of this array a monochromator is used to focus different wavelengths into different pixels. The spectrometer has been used for fluorescence lifetime spectroscopy: 5 nm spectral resolution over an 80 nm bandwidth is achieved. Lifetime spectroscopy of Nile blue is demonstrated.

Increasing the density of passive photonic-integrated circuits via nanophotonic cloaking

NASA Astrophysics Data System (ADS)

Shen, Bing; Polson, Randy; Menon, Rajesh

2016-11-01

Photonic-integrated devices need to be adequately spaced apart to prevent signal cross-talk. This fundamentally limits their packing density. Here we report the use of nanophotonic cloaking to render neighbouring devices invisible to one another, which allows them to be placed closer together than is otherwise feasible. Specifically, we experimentally demonstrated waveguides that are spaced by a distance of ~λ0/2 and designed waveguides with centre-to-centre spacing as small as 600 nm (<λ0/2.5). Our experiments show a transmission efficiency >-2 dB and an extinction ratio >15 dB over a bandwidth larger than 60 nm. This performance can be improved with better design algorithms and industry-standard lithography. The nanophotonic cloak relies on multiple guided-mode resonances, which render such devices very robust to fabrication errors. Our devices are broadly complimentary-metal-oxide-semiconductor compatible, have a minimum pitch of 200 nm and can be fabricated with a single lithography step. The nanophotonic cloaks can be generally applied to all passive integrated photonics.

355 nm UV laser patterning and post-processing of FR4 PCB for fine pitch components integration

NASA Astrophysics Data System (ADS)

Dupont, F.; Stoukatch, S.; Laurent, P.; Dricot, S.; Kraft, M.

2018-01-01

Laser direct patterning of fine pitch features on standard PCB (Printed Circuit Board) was investigated. As a feasibility study, eight parameter sets were selected and the smallest achievable grooves and tracks were determined. Three regular FR4 (Flame Resistant 4) PCB substrates have been experimented with. The first two have respectively 18 μm and 35 μm bare copper conductive layer without finish while the third one has a 18 μm copper layer with ENIG (Electroless Nickel Immersion Gold) finish. Laser patterning of PCB conductive structure is a single step, maskless and purely dry operation expected to allow reaching fine pitch features, even on thick copper layers (≥ 18 μm) for which the traditional chemical wet processes encounter underetch problems. Aside PCB complete structuring, a second objective is to evaluate laser post-processing of standard patterned PCB as an economically viable technique to integrate a few fine pitch components on low cost PCBs. This process is suitable for prototyping and for small and medium series. The widths of the smallest grooves and tracks that we achieved were measured about 11 μm and 19 μm on 18 μm thick cooper layer, 13 μm and 39 μm on 35 μm thick cooper layer, and 11 μm and 38 μm on 18 μm cooper layer with ENIG finish. These values are well below what can be achieved with a wet process. Etching results are presented at high magnification both from the top and from a cross-sectioning perspective. The latter allows observation of the TAZ (Thermal Affected Zone) in the conductive layer and the damages in the FR4.

Impact of design-parameters on the optical performance of a high-power adaptive mirror

NASA Astrophysics Data System (ADS)

Koek, Wouter D.; Nijkerk, David; Smeltink, Jeroen A.; van den Dool, Teun C.; van Zwet, Erwin J.; van Baars, Gregor E.

2017-02-01

TNO is developing a High Power Adaptive Mirror (HPAM) to be used in the CO2 laser beam path of an Extreme Ultra- Violet (EUV) light source for next-generation lithography. In this paper we report on a developed methodology, and the necessary simulation tools, to assess the performance and associated sensitivities of this deformable mirror. Our analyses show that, given the current limited insight concerning the process window of EUV generation, the HPAM module should have an actuator pitch of <= 4 mm. Furthermore we have modelled the sensitivity of performance with respect to dimpling and actuator noise. For example, for a deformable mirror with an actuator pitch of 4 mm, and if the associated performance impact is to be limited to smaller than 5%, the actuator noise should be smaller than 45 nm (rms). Our tools assist in the detailed design process by assessing the performance impact of various design choices, including for example those that affect the shape and spectral content of the influence function.

Nitrogen-doped hierarchical porous carbon with high surface area derived from graphene oxide/pitch oxide composite for supercapacitors.

PubMed

Ma, Yuan; Ma, Chang; Sheng, Jie; Zhang, Haixia; Wang, Ranran; Xie, Zhenyu; Shi, Jingli

2016-01-01

A nitrogen-doped hierarchical porous carbon has been prepared through one-step KOH activation of pitch oxide/graphene oxide composite. At a low weight ratio of KOH/composite (1:1), the as-prepared carbon possesses high specific surface area, rich nitrogen and oxygen, appropriate mesopore/micropore ratio and considerable small-sized mesopores. The addition of graphene oxide plays a key role in forming 4 nm mesopores. The sample PO-GO-16 presents the characteristics of large surface area (2196 m(2) g(-1)), high mesoporosity (47.6%), as well as rich nitrogen (1.52 at.%) and oxygen (6.9 at.%). As a result, PO-GO-16 electrode shows an outstanding capacitive behavior: high capacitance (296 F g(-1)) and ultrahigh-rate performance (192 F g(-1) at 10 A g(-1)) in 6 M KOH aqueous electrolyte. The balanced structure characteristic, low-cost and high performance, make the porous carbon a promising electrode material for supercapacitors. Copyright © 2015 Elsevier Inc. All rights reserved.

MOD-0A 200 kW wind turbine generator design and analysis report

NASA Astrophysics Data System (ADS)

Anderson, T. S.; Bodenschatz, C. A.; Eggers, A. G.; Hughes, P. S.; Lampe, R. F.; Lipner, M. H.; Schornhorst, J. R.

1980-08-01

The design, analysis, and initial performance of the MOD-OA 200 kW wind turbine generator at Clayton, NM is documented. The MOD-OA was designed and built to obtain operation and performance data and experience in utility environments. The project requirements, approach, system description, design requirements, design, analysis, system tests, installation, safety considerations, failure modes and effects analysis, data acquisition, and initial performance for the wind turbine are discussed. The design and analysis of the rotor, drive train, nacelle equipment, yaw drive mechanism and brake, tower, foundation, electricl system, and control systems are presented. The rotor includes the blades, hub, and pitch change mechanism. The drive train includes the low speed shaft, speed increaser, high speed shaft, and rotor brake. The electrical system includes the generator, switchgear, transformer, and utility connection. The control systems are the blade pitch, yaw, and generator control, and the safety system. Manual, automatic, and remote control are discussed. Systems analyses on dynamic loads and fatigue are presented.

MOD-0A 200 kW wind turbine generator design and analysis report

NASA Technical Reports Server (NTRS)

Anderson, T. S.; Bodenschatz, C. A.; Eggers, A. G.; Hughes, P. S.; Lampe, R. F.; Lipner, M. H.; Schornhorst, J. R.

1980-01-01

The design, analysis, and initial performance of the MOD-OA 200 kW wind turbine generator at Clayton, NM is documented. The MOD-OA was designed and built to obtain operation and performance data and experience in utility environments. The project requirements, approach, system description, design requirements, design, analysis, system tests, installation, safety considerations, failure modes and effects analysis, data acquisition, and initial performance for the wind turbine are discussed. The design and analysis of the rotor, drive train, nacelle equipment, yaw drive mechanism and brake, tower, foundation, electricl system, and control systems are presented. The rotor includes the blades, hub, and pitch change mechanism. The drive train includes the low speed shaft, speed increaser, high speed shaft, and rotor brake. The electrical system includes the generator, switchgear, transformer, and utility connection. The control systems are the blade pitch, yaw, and generator control, and the safety system. Manual, automatic, and remote control are discussed. Systems analyses on dynamic loads and fatigue are presented.

Photo-switchable bistable twisted nematic liquid crystal optical switch.

PubMed

Wang, Chun-Ta; Wu, Yueh-Chi; Lin, Tsung-Hsien

2013-02-25

This work demonstrates a photo-switchable bistable optical switch that is based on an azo-chiral doped liquid crystal (ACDLC). The photo-induced isomerization of the azo-chiral dopant can change the chirality of twisted nematic liquid crystal and the gap/pitch ratio of an ACDLC device, enabling switching between 0° and 180° twist states in a homogeneous aligned cell. The bistable 180° and 0° twist states of the azo-chiral doped liquid crystal between crossed polarizers correspond to the ON and OFF states of a light shutter, respectively, and they can be maintained stably for tens of hours. Rapid switching between 180° and 0° twist states can be carried out using 408 and 532 nm addressing light. Such a photo-controllable optical switch requires no specific asymmetric alignment layer or precise control of the cell gap/pitch ratio, so it is easily fabricated and has the potential for use in optical systems.

Microeconomics of process control in semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Monahan, Kevin M.

2003-06-01

Process window control enables accelerated design-rule shrinks for both logic and memory manufacturers, but simple microeconomic models that directly link the effects of process window control to maximum profitability are rare. In this work, we derive these links using a simplified model for the maximum rate of profit generated by the semiconductor manufacturing process. We show that the ability of process window control to achieve these economic objectives may be limited by variability in the larger manufacturing context, including measurement delays and process variation at the lot, wafer, x-wafer, x-field, and x-chip levels. We conclude that x-wafer and x-field CD control strategies will be critical enablers of density, performance and optimum profitability at the 90 and 65nm technology nodes. These analyses correlate well with actual factory data and often identify millions of dollars in potential incremental revenue and cost savings. As an example, we show that a scatterometry-based CD Process Window Monitor is an economically justified, enabling technology for the 65nm node.

Meeting critical gate linewidth control needs at the 65 nm node

NASA Astrophysics Data System (ADS)

Mahorowala, Arpan; Halle, Scott; Gabor, Allen; Chu, William; Barberet, Alexandra; Samuels, Donald; Abdo, Amr; Tsou, Len; Yan, Wendy; Iseda, Seiji; Patel, Kaushal; Dirahoui, Bachir; Nomura, Asuka; Ahsan, Ishtiaq; Azam, Faisal; Berg, Gary; Brendler, Andrew; Zimmerman, Jeffrey; Faure, Tom

2006-03-01

With the nominal gate length at the 65 nm node being only 35 nm, controlling the critical dimension (CD) in polysilicon to within a few nanometers is essential to achieve a competitive power-to-performance ratio. Gate linewidths must be controlled, not only at the chip level so that the chip performs as the circuit designers and device engineers had intended, but also at the wafer level so that more chips with the optimum power-to-performance ratio are manufactured. Achieving tight across-chip linewidth variation (ACLV) and chip mean variation (CMV) is possible only if the mask-making, lithography, and etching processes are all controlled to very tight specifications. This paper identifies the various ACLV and CMV components, describes their root causes, and discusses a methodology to quantify them. For example, the site-to-site ACLV component is divided into systematic and random sub-components. The systematic component of the variation is attributed in part to pattern density variation across the field, and variation in exposure dose across the slit. The paper demonstrates our team's success in achieving the tight gate CD tolerances required for 65 nm technology. Certain key challenges faced, and methods employed to overcome them are described. For instance, the use of dose-compensation strategies to correct the small but systematic CD variations measured across the wafer, is described. Finally, the impact of immersion lithography on both ACLV and CMV is briefly discussed.

Tannic acid-modified silver nanoparticles for wound healing: the importance of size

PubMed Central

Orlowski, Piotr; Zmigrodzka, Magdalena; Tomaszewska, Emilia; Ranoszek-Soliwoda, Katarzyna; Czupryn, Monika; Antos-Bielska, Malgorzata; Szemraj, Janusz; Celichowski, Grzegorz; Grobelny, Jaroslaw

2018-01-01

Introduction Silver nanoparticles (AgNPs) have been shown to promote wound healing and to exhibit antimicrobial properties against a broad range of bacteria. In our previous study, we prepared tannic acid (TA)-modified AgNPs showing a good toxicological profile and immunomodulatory properties useful for potential dermal applications. Methods In this study, in vitro scratch assay, antimicrobial tests, modified lymph node assay as well as a mouse splint wound model were used to access the wound healing potential of TA-modified and unmodified AgNPs. Results TA-modified but not unmodified AgNPs exhibited effective antibacterial activity against Pseudomonas aeruginosa, Staphylococcus aureus and Escherichia coli and stimulated migration of keratinocytes in vitro. The tests using the mouse splint wound model showed that TA-modified 33 and 46 nm AgNPs promoted better wound closure, epithelialization, angiogenesis and formation of the granulation tissue. Additionally, AgNPs elicited expression of VEGF-α, PDGF-β and TGF-β1 cytokines involved in wound healing more efficiently in comparison to control and TA-treated wounds. However, both the lymph node assay and the wound model showed that TA-modified AgNPs sized 13 nm can elicit strong inflammatory response not only during wound healing but also when applied to the damaged skin. Conclusion TA-modified AgNPs sized >26 nm promote wound healing better than TA-modified or unmodified AgNPs. These findings suggest that TA-modified AgNPs sized >26 nm may have a promising application in wound management. PMID:29497293

Modelling and characteristic analysis of tri-axle trucks with hydraulically interconnected suspensions

NASA Astrophysics Data System (ADS)

Ding, Fei; Han, Xu; Luo, Zhen; Zhang, Nong

2012-12-01

In this paper, a new hydraulically interconnected suspension (HIS) system is proposed for the implementation of a resistance control for the pitch and bounce modes of tri-axle heavy trucks. A lumped-mass half-truck model is established using the free-body diagram method. The equations of motion of a mechanical and hydraulic coupled system are developed by incorporating the hydraulic strut forces into the mechanical subsystem as externally applied forces. The transfer matrix method (TMM) is used to evaluate the impedance matrix of the hydraulic subsystem consisting of models of fluid pipes, damper valves, accumulators, and three-way junctions. The TMM is further applied to find the quantitative relationships between the hydraulic strut forces and boundary flow of the mechanical-fluid interactive subsystem. The modal analysis method is employed to perform the vibration analysis between the trucks with the conventional suspension and the proposed HIS. Comparison analysis focuses on free vibration with identified eigenvalues and eigenvectors, isolation vibration capacity, and force vibration in terms of the power spectrum density responses. The obtained results show the effectiveness of the proposed HIS system in reducing the pitch motion of sprung mass and simultaneously maintaining the ride comfort. The pitch stiffness is increased while the bounce stiffness is slightly softened. The peak values of sprung mass and wheel hop motions are greatly reduced, and the vibration decay rate of sprung mass is also significantly increased.

In Vitro Plant Regeneration from Commercial Cultivars of Soybean

PubMed Central

Raza, Ghulam; Singh, Mohan B.

2017-01-01

Soybean, a major legume crop, is the source of vegetable oil and protein. There is a need for transgenic approaches to breeding superior soybean varieties to meet future climate challenges. Efficient plant regeneration is a prerequisite for successful application of genetic transformation technology. Soybean cultivars are classified into different maturity groups based on photoperiod requirements. In this study, nine soybean varieties belonging to different maturity group were regenerated successfully from three different explants: half split hypocotyl, complete hypocotyl, and cotyledonary node. All the genotypes and explant types responded by producing adventitious shoots. Shoot induction potential ranged within 60–87%, 50–100%, and 75–100%, and regeneration rate ranged within 4.2–10, 2.7–4.2, and 2.6–10.5 shoots per explant using half split hypocotyl, complete hypocotyl, and cotyledonary explants, respectively, among all the tested genotypes. Bunya variety showed the best regeneration response using half split and complete hypocotyl explants and the PNR791 with cotyledonary node. The regenerated shoots were successfully rooted and acclimatized to glasshouse conditions. This study shows that commercial varieties of soybean are amenable to shoot regeneration with high regeneration frequencies and could be exploited for genetic transformation. Further, our results show no correlation between shoots regeneration capacity with the maturity grouping of the soybean cultivars tested. PMID:28691031

In Vitro Plant Regeneration from Commercial Cultivars of Soybean.

PubMed

Raza, Ghulam; Singh, Mohan B; Bhalla, Prem L

2017-01-01

Soybean, a major legume crop, is the source of vegetable oil and protein. There is a need for transgenic approaches to breeding superior soybean varieties to meet future climate challenges. Efficient plant regeneration is a prerequisite for successful application of genetic transformation technology. Soybean cultivars are classified into different maturity groups based on photoperiod requirements. In this study, nine soybean varieties belonging to different maturity group were regenerated successfully from three different explants: half split hypocotyl, complete hypocotyl, and cotyledonary node. All the genotypes and explant types responded by producing adventitious shoots. Shoot induction potential ranged within 60-87%, 50-100%, and 75-100%, and regeneration rate ranged within 4.2-10, 2.7-4.2, and 2.6-10.5 shoots per explant using half split hypocotyl, complete hypocotyl, and cotyledonary explants, respectively, among all the tested genotypes. Bunya variety showed the best regeneration response using half split and complete hypocotyl explants and the PNR791 with cotyledonary node. The regenerated shoots were successfully rooted and acclimatized to glasshouse conditions. This study shows that commercial varieties of soybean are amenable to shoot regeneration with high regeneration frequencies and could be exploited for genetic transformation. Further, our results show no correlation between shoots regeneration capacity with the maturity grouping of the soybean cultivars tested.

Heat transfer and pressure drop studies of TiO2/DI water nanofluids in helically corrugated tubes using spiraled rod inserts

NASA Astrophysics Data System (ADS)

Anbu, S.; Venkatachalapathy, S.; Suresh, S.

2018-05-01

An experimental study on the convective heat transfer and friction factor characteristics of TiO2/DI water nanofluids in uniformly heated plain and helically corrugated tubes (HCT) with and without spiraled rod inserts (SRI) under laminar flow regime is presented in this paper. TiO2 nanoparticles with an average size of 32 nm are dispersed in deionized (DI) water to form stable suspensions containing 0.1, 0.15, 0.2, and 0.25% volume concentrations of nanoparticles. It is found that the inclusion of nanoparticles to DI water ameliorated Nusselt number which increased with nanoparticles concentration upto 0.2%. Two spiraled rod inserts made of copper with different pitches (pi = 50 mm and 30 mm) are inserted in both plain and corrugated tubes and it is found that the addition of these inserts increased the Nusselt number substantially. For Helically corrugated tube with lower pitch and maximum height of corrugation (pc = 8 mm, hc = 1 mm) with 0.2% volume concentration of nanoparticles, a maximum enhancement of 15% in Nusselt number is found without insert and with insert having lower pitch (pi = 30 mm) the enhancement is 34% when compared to DI water in plain tube. The results on friction factor show a maximum penalty of about 53.56% for the above HCT.

Scatterometry measurement of nested lines, dual space, and rectangular contact CD on phase-shift masks

NASA Astrophysics Data System (ADS)

Lee, Kyung M.; Yedur, Sanjay; Henrichs, Sven; Tavassoli, Malahat; Baik, Kiho

2007-03-01

Evaluation of lithography process or stepper involves very large quantity of CD measurements and measurement time. In this paper, we report on a application of Scatterometry based metrology for evaluation of binary photomask lithography. Measurements were made on mask level with ODP scatterometer then on wafer with CD-SEM. 4 to 1 scaling from mask to wafer means 60nm line on wafer translates to 240nm on mask, easily measurable on ODP. Calculation of scatterometer profile information was performed by a in-situ library-based analysis (5sec/site). We characterized the CD uniformity, linearity, and metal film thickness uniformity. Results show that linearity measured from fixed-pitch, varying line/space ratio targets show good correlation to top-down CD-SEM with R2 of more than 0.99. ODP-SEM correlation results for variable pitch shows that careful examination of scatterometer profile results in order to obtain better correlation to CD SEM, since both tools react differently to the target profile variation. ODP results show that global CD distribution is clearly measurable with less outliers compared to CD SEM data. This is thought to be due to 'averaging' effect of scatterometer. The data show that Scatterometry provides a nondestructive and faster mean of characterizing lithography stepper performanceprofiles. APSM 1st level (before Cr removal) 'dual-space' CDs and EPSM rectangular contacts were also measured with and results demonstrates that Scatterometer is capable of measuring these targets with reasonable correlation to SEM.

Ultimate intra-wafer critical dimension uniformity control by using lithography and etch tool corrections

NASA Astrophysics Data System (ADS)

Kubis, Michael; Wise, Rich; Reijnen, Liesbeth; Viatkina, Katja; Jaenen, Patrick; Luca, Melisa; Mernier, Guillaume; Chahine, Charlotte; Hellin, David; Kam, Benjamin; Sobieski, Daniel; Vertommen, Johan; Mulkens, Jan; Dusa, Mircea; Dixit, Girish; Shamma, Nader; Leray, Philippe

2016-03-01

With shrinking design rules, the overall patterning requirements are getting aggressively tighter. For the 7-nm node and below, allowable CD uniformity variations are entering the Angstrom region (ref [1]). Optimizing inter- and intra-field CD uniformity of the final pattern requires a holistic tuning of all process steps. In previous work, CD control with either litho cluster or etch tool corrections has been discussed. Today, we present a holistic CD control approach, combining the correction capability of the etch tool with the correction capability of the exposure tool. The study is done on 10-nm logic node wafers, processed with a test vehicle stack patterning sequence. We include wafer-to-wafer and lot-to-lot variation and apply optical scatterometry to characterize the fingerprints. Making use of all available correction capabilities (lithography and etch), we investigated single application of exposure tool corrections and of etch tool corrections as well as combinations of both to reach the lowest CD uniformity. Results of the final pattern uniformity based on single and combined corrections are shown. We conclude on the application of this holistic lithography and etch optimization to 7nm High-Volume manufacturing, paving the way to ultimate within-wafer CD uniformity control.

IR-drop analysis for validating power grids and standard cell architectures in sub-10nm node designs

NASA Astrophysics Data System (ADS)

Ban, Yongchan; Wang, Chenchen; Zeng, Jia; Kye, Jongwook

2017-03-01

Since chip performance and power are highly dependent on the operating voltage, the robust power distribution network (PDN) is of utmost importance in designs to provide with the reliable voltage without voltage (IR)-drop. However, rapid increase of parasitic resistance and capacitance (RC) in interconnects makes IR-drop much worse with technology scaling. This paper shows various IR-drop analyses in sub 10nm designs. The major objectives are to validate standard cell architectures, where different sizes of power/ground and metal tracks are validated, and to validate PDN architecture, where types of power hook-up approaches are evaluated with IR-drop calculation. To estimate IR-drops in 10nm and below technologies, we first prepare physically routed designs given standard cell libraries, where we use open RISC RTL, synthesize the CPU, and apply placement & routing with process-design kits (PDK). Then, static and dynamic IR-drop flows are set up with commercial tools. Using the IR-drop flow, we compare standard cell architectures, and analysis impacts on performance, power, and area (PPA) with the previous technology-node designs. With this IR-drop flow, we can optimize the best PDN structure against IR-drops as well as types of standard cell library.

Boundary-based cellwise OPC for standard-cell layouts

NASA Astrophysics Data System (ADS)

Pawlowski, David M.; Deng, Liang; Wong, Martin D. F.

2007-03-01

Model based optical proximity correction (OPC) has become necessary at 90nm technology node. Cellwise OPC is an attractive technique to reduce the mask data size as well as the prohibitive runtime of full-chip OPC. As feature dimensions have gotten smaller, the radius of influence for edge features has extended further into neighboring cells such that it is no longer sufficient to perform cellwise OPC independent of neighboring cells, especially for the critical layers. The methodology described in this work accounts for features in neighboring cells and allows a cellwise approach to be applied to cells with a printed gate length of 45nm with the projection that it can also be applied to future technology nodes. OPC-ready cells are generated at library creation (independent of placement) using a boundary-based technique. Each cell has a tractable number of OPC-ready versions due to an intelligent characterization of standard cell layout features. Results are very promising: the average edge placement error (EPE) for all metal1 features in 100 layouts is 0.731nm which is less than 1% of metal1 width; the maximum EPE for poly features reduced to 1/3, compared to cellwise OPC without considering boundaries, creating similar levels of lithographic accuracy while obviating any of the drawbacks inherent in layout specific full-chip model-based OPC.

Cervical lymphadenopathy in the dental patient: a review of clinical approach.

PubMed

Parisi, Ernesta; Glick, Michael

2005-06-01

Lymph node enlargement may be an incidental finding on examination, or may be associated with a patient complaint. It is likely that over half of all patients examined each day may have enlarged lymph nodes in the head and neck region. There are no written guidelines specifying when further evaluation of lymphadenopathy is necessary. With such a high frequency of occurrence, oral health care providers need to be able to determine when lymphadenopathy should be investigated further. Although most cervical lymphadenopathy is the result of a benign infectious etiology, clinicians should search for a precipitating cause and examine other nodal locations to exclude generalized lymphadenopathy. Lymph nodes larger than 1 cm in diameter are generally considered abnormal. Malignancy should be considered when palpable lymph nodes are identified in the supraclavicular region, or when nodes are rock hard, rubbery, or fixed in consistency. Patients with unexplained localized cervical lymphadenopathy presenting with a benign clinical picture should be observed for a 2- to 4-week period. Generalized lymphadenopathy should prompt further clinical investigation. This article reviews common causes of lymphadenopathy, and presents a methodical clinical approach to a patient with cervical lymphadenopathy.

Announcing Supercomputer Summit

ScienceCinema

Wells, Jack; Bland, Buddy; Nichols, Jeff; Hack, Jim; Foertter, Fernanda; Hagen, Gaute; Maier, Thomas; Ashfaq, Moetasim; Messer, Bronson; Parete-Koon, Suzanne

2018-01-16

Summit is the next leap in leadership-class computing systems for open science. With Summit we will be able to address, with greater complexity and higher fidelity, questions concerning who we are, our place on earth, and in our universe. Summit will deliver more than five times the computational performance of Titan’s 18,688 nodes, using only approximately 3,400 nodes when it arrives in 2017. Like Titan, Summit will have a hybrid architecture, and each node will contain multiple IBM POWER9 CPUs and NVIDIA Volta GPUs all connected together with NVIDIA’s high-speed NVLink. Each node will have over half a terabyte of coherent memory (high bandwidth memory + DDR4) addressable by all CPUs and GPUs plus 800GB of non-volatile RAM that can be used as a burst buffer or as extended memory. To provide a high rate of I/O throughput, the nodes will be connected in a non-blocking fat-tree using a dual-rail Mellanox EDR InfiniBand interconnect. Upon completion, Summit will allow researchers in all fields of science unprecedented access to solving some of the world’s most pressing challenges.

A Low-Complexity Euclidean Orthogonal LDPC Architecture for Low Power Applications.

PubMed

Revathy, M; Saravanan, R

2015-01-01

Low-density parity-check (LDPC) codes have been implemented in latest digital video broadcasting, broadband wireless access (WiMax), and fourth generation of wireless standards. In this paper, we have proposed a high efficient low-density parity-check code (LDPC) decoder architecture for low power applications. This study also considers the design and analysis of check node and variable node units and Euclidean orthogonal generator in LDPC decoder architecture. The Euclidean orthogonal generator is used to reduce the error rate of the proposed LDPC architecture, which can be incorporated between check and variable node architecture. This proposed decoder design is synthesized on Xilinx 9.2i platform and simulated using Modelsim, which is targeted to 45 nm devices. Synthesis report proves that the proposed architecture greatly reduces the power consumption and hardware utilizations on comparing with different conventional architectures.

Manufacturability study of masks created by inverse lithography technology (ILT)

NASA Astrophysics Data System (ADS)

Martin, Patrick M.; Progler, C. J.; Xiao, G.; Gray, R.; Pang, L.; Liu, Y.

2005-11-01

As photolithography is pushed to fabricate deep-sub wavelength devices for 90nm, 65nm and smaller technology nodes using available exposure tools (i.e., 248nm, 193nm steppers), photomask capability is becoming extremely critical. For example, PSM masks require more complicated processing; aggressive OPC makes the writing time longer and sometimes unpredictable; and, high MEEF imposes much more stringent demands on mask quality. Therefore, in order for any new lithography technology to be adopted into production, mask manufacturability must be studied thoroughly and carefully. In this paper we will present the mask manufacturability study on mask patterns created using Inverse Lithography Technology (ILT). Unlike conventional OPC methodologies, ILT uses a unique outcome-based technology to mathematically determine the mask features that produce the desired on-wafer results. ILT solves the most critical litho challenges of the deep sub-wavelength era. Potential benefits include: higher yield; expanded litho process windows; superb pattern fidelity at 90, 65 & 45-nm nodes; and reduced time-to-silicon - all without changing the existing lithography infrastructure and design-to-silicon flow. In this study a number of cell structures were selected and used as test patterns. "Luminized patterns" were generated for binary mask and attenuated phase-shift mask. Both conventional OPC patterns and "luminized patterns" were put on a test reticle side by side, and they all have a number of variations in term of correction aggressivity level and mask complexity. Mask manufacturability, including data fracturing, writing time, mask inspection, and metrology were studied. The results demonstrate that, by optimizing the inspection recipe, masks created using ILT technology can be made and qualified using current processes with a reasonable turn-around time.

FPGA chip performance improvement with gate shrink through alternating PSM 90nm process

NASA Astrophysics Data System (ADS)

Yu, Chun-Chi; Shieh, Ming-Feng; Liu, Erick; Lin, Benjamin; Ho, Jonathan; Wu, Xin; Panaite, Petrisor; Chacko, Manoj; Zhang, Yunqiang; Lei, Wen-Kang

2005-11-01

In the post-physical verification space called 'Mask Synthesis' a key component of design-for-manufacturing (DFM), double-exposure based, dark-field, alternating PSM (Alt-PSM) is being increasingly applied at the 90nm node in addition with other mature resolution enhancement techniques (RETs) such as optical proximity correction (OPC) and sub-resolution assist features (SRAF). Several high-performance IC manufacturers already use alt-PSM technology in 65nm production. At 90nm having strong control over the lithography process is a critical component in meeting targeted yield goals. However, implementing alt-PSM in production has been challenging due to several factors such as phase conflict errors, mask manufacturing, and the increased production cost due to the need for two masks in the process. Implementation of Alt-PSM generally requires phase compliance rules and proper phase topology in the layout and this has been successful for the technology node with these rules implemented. However, this may not be true for a mature, production process technology, in this case 90 nm. Especially, in the foundry-fabless business model where the foundry provides a standard set of design rules to its customers for a given process technology, and where not all the foundry customers require Alt-PSM in their tapeout flow. With minimum design changes, design houses usually are motivated by higher product performance for the existing designs. What follows is an in-depth review of the motivation to apply alt-PSM on a production FPGA, the DFM challenges to each partner faced, its effect on the tapeout flow, and how design, manufacturing, and EDA teams worked together to resolve phase conflicts, tapeout the chip, and finally verify the silicon results in production.

OPC model data collection for 45-nm technology node using automatic CD-SEM offline recipe creation

NASA Astrophysics Data System (ADS)

Fischer, Daniel; Talbi, Mohamed; Wei, Alex; Menadeva, Ovadya; Cornell, Roger

2007-03-01

Optical and Process Correction in the 45nm node is requiring an ever higher level of characterization. The greater complexity drives a need for automation of the metrology process allowing more efficient, accurate and effective use of the engineering resources and metrology tool time in the fab, helping to satisfy what seems an insatiable appetite for data by lithographers and modelers charged with development of 45nm and 32nm processes. The scope of the work referenced here is a 45nm design cycle "full-loop automation", starting with gds formatted target design layout and ending with the necessary feedback of one and two dimensional printed wafer metrology. In this paper the authors consider the key elements of software, algorithmic framework and Critical Dimension Scanning Electron Microscope (CDSEM) functionality necessary to automate its recipe creation. We evaluate specific problems with the methodology of the former art, "on-tool on-wafer" recipe construction, and discuss how the implementation of the design based recipe generation improves upon the overall metrology process. Individual target-by-target construction, use of a one pattern recognition template fits all approach, a blind navigation to the desired measurement feature, lengthy sessions on tool to construct recipes and limited ability to determine measurement quality in the resultant data set are each discussed as to how the state of the art Design Based Metrology (DBM) approach is implemented. The offline created recipes have shown pattern recognition success rates of up to 100% and measurement success rates of up to 93% for line/space as well as for 2D Minimum/Maximum measurements without manual assists during measurement.

Using temperature to reduce noise in quantum frequency conversion.

PubMed

Kuo, Paulina S; Pelc, Jason S; Langrock, Carsten; Fejer, M M

2018-05-01

Quantum frequency conversion is important in quantum networks to interface nodes operating at different wavelengths and to enable long-distance quantum communication using telecommunications wavelengths. Unfortunately, frequency conversion in actual devices is not a noise-free process. One main source of noise is spontaneous Raman scattering, which can be reduced by lowering the device operating temperature. We explore frequency conversion of 1554 nm photons to 837 nm using a 1813 nm pump in a periodically poled lithium niobate waveguide device. By reducing the temperature from 85°C to 40°C, we show a three-fold reduction in dark count rates, which is in good agreement with theory.

Vortex Mask: Making 80nm contacts with a twist!

NASA Astrophysics Data System (ADS)

Levenson, Marc D.; Dai, Grace; Ebihara, Takeaki

2002-12-01

An optical vortex has a phase that spirals like a corkscrew. Since any nonzero optical amplitude must have a well-defined phase, the axis of a vortex (where the phase is undefined) is always dark. Printed in negative resist, lowest order vortices would produce contact holes with 0.20.6 can be produced using a chromeless phase-edge mask composed of rectangles with phases of 0°, 90°, 180° and 270°. EMF and Kirchhoff-approximation simulations reveal that the image quality of the dark spots is excellent, and predict a process window with 15% exposure latitude and 400nm DOF for 80nm diameter spots on pitches >=250nm at σ=0.15. EMF simulations predict that the 0-270° phase step will not be excessively dark if the quartz wall is vertical. Chrome spots at the centers can control the diameters which otherwise are set by the parameters of the imaging system and exposure dose. Unwanted vortices can be erased from the image by exposing with a second, more conventional, trim mask. This method would be superior to the other ways of producing sub-wavelength vias, but successful implementation requires the development of appropriate negative-tone resist processes.

The Reduction of TED in Ion Implanted Silicon

NASA Astrophysics Data System (ADS)

Jain, Amitabh

2008-11-01

The leading challenge in the continued scaling of junctions made by ion implantation and annealing is the control of the undesired transient enhanced diffusion (TED) effect. Spike annealing has been used as a means to reduce this effect and has proven successful in previous nodes. The peak temperature in this process is typically 1050 °C and the time spent within 50 °C of the peak is of the order of 1.5 seconds. As technology advances along the future scaling roadmap, further reduction or elimination of the enhanced diffusion effect is necessary. We have shown that raising the peak temperature to 1175 °C or more and reduction of the anneal time at peak temperature to less than a millisecond is effective in eliminating enhanced diffusion. We show that it is possible to employ a sequence of millisecond anneal followed by spike anneal to obtain profiles that do not exhibit gradient degradation at the junction and have junction depth and sheet resistance appropriate to the needs of future technology nodes. We have implemented millisecond annealing using a carbon dioxide laser to support high-volume manufacturing of 65 nm microprocessors and system-on-chip products. We further show how the use of molecular ion implantation to produce amorphousness followed by laser annealing to produce solid phase epitaxial regrowth results in junctions that meet the shallow depth and abruptness requirements of the 32 nm node.

A model-based approach for the scattering-bar printing avoidance

NASA Astrophysics Data System (ADS)

Du, Yaojun; Li, Liang; Zhang, Jingjing; Shao, Feng; Zuniga, Christian; Deng, Yunfei

2018-03-01

As the technology node for the semiconductor manufacturing approaches advanced nodes, the scattering-bars (SBs) are more crucial than ever to ensure a good on-wafer printability of the line space pattern and hole pattern. The main pattern with small pitches requires a very narrow PV (process variation) band. A delicate SB addition scheme is thus needed to maintain a sufficient PW (process window) for the semi-iso- and iso-patterns. In general, the wider, longer, and closer to main feature SBs will be more effective in enhancing the printability; on the other hand, they are also more likely to be printed on the wafer; resulting in undesired defects transferable to subsequent processes. In this work, we have developed a model based approach for the scattering-bar printing avoidance (SPA). A specially designed optical model was tuned based on a broad range of test patterns which contain a variation of CDs and SB placements showing printing and non-printing scattering bars. A printing threshold is then obtained to check the extra-printings of SBs. The accuracy of this threshold is verified by pre-designed test patterns. The printing threshold associated with our novel SPA model allows us to set up a proper SB rule.

Diffraction-analysis-based characterization of very fine gratings

NASA Astrophysics Data System (ADS)

Bischoff, Joerg; Truckenbrodt, Horst; Bauer, Joachim J.

1997-09-01

Fine gratings with spatial periods below one micron, either ruled mechanically or patterned holographically, play a key role as encoders in high precision translational or rotational coordinate or measuring machines. Besides, the fast in-line characterization of submicron patterns is a stringent demand in recent microelectronic technology. Thus, a rapid, destruction free and highly accurate measuring technique is required to ensure the quality during manufacturing and for final testing. We propose an optical method which was already successfully introduced in semiconductor industry. Here, the inverse scatter problem inherent in this diffraction based approach is overcome by sophisticated data analysis such as multivariate regression or neural networks. Shortly sketched, the procedure is as follows: certain diffraction efficiencies are measured with an optical angle resolved scatterometer and assigned to a number of profile parameters via data analysis (prediction). Before, the specific measuring model has to be calibrated. If the wavelength-to-period rate is well below unity, it is quite easy to gather enough diffraction orders. However, for gratings with spatial periods being smaller than the probing wavelength, merely the specular reflex will propagate for perpendicular incidence (zero order grating). Consequently, it is virtually impossible to perform a regression analysis. A proper mean to tackle this bottleneck is to record the zero-order reflex as a function of the incident angle. In this paper, the measurement of submicron gratings is discussed with the examples of 0.8, 1.0 and 1.4 micron period resist gratings on silicon, etched silicon oxide on silicon (same periods) and a 512 nm pitch chromium grating on quartz. Using a He-Ne laser with 633 nm wavelength and measuring the direct reflex in both linear polarizations, it is shown that even submicron patterning processes can be monitored and the resulting profiles with linewidths below a half micron can be characterized reliably with 2(theta) - scatterometry.

Understanding the implementation of evidence-based care: a structural network approach.

PubMed

Parchman, Michael L; Scoglio, Caterina M; Schumm, Phillip

2011-02-24

Recent study of complex networks has yielded many new insights into phenomenon such as social networks, the internet, and sexually transmitted infections. The purpose of this analysis is to examine the properties of a network created by the 'co-care' of patients within one region of the Veterans Health Affairs. Data were obtained for all outpatient visits from 1 October 2006 to 30 September 2008 within one large Veterans Integrated Service Network. Types of physician within each clinic were nodes connected by shared patients, with a weighted link representing the number of shared patients between each connected pair. Network metrics calculated included edge weights, node degree, node strength, node coreness, and node betweenness. Log-log plots were used to examine the distribution of these metrics. Sizes of k-core networks were also computed under multiple conditions of node removal. There were 4,310,465 encounters by 266,710 shared patients between 722 provider types (nodes) across 41 stations or clinics resulting in 34,390 edges. The number of other nodes to which primary care provider nodes have a connection (172.7) is 42% greater than that of general surgeons and two and one-half times as high as cardiology. The log-log plot of the edge weight distribution appears to be linear in nature, revealing a 'scale-free' characteristic of the network, while the distributions of node degree and node strength are less so. The analysis of the k-core network sizes under increasing removal of primary care nodes shows that about 10 most connected primary care nodes play a critical role in keeping the k-core networks connected, because their removal disintegrates the highest k-core network. Delivery of healthcare in a large healthcare system such as that of the US Department of Veterans Affairs (VA) can be represented as a complex network. This network consists of highly connected provider nodes that serve as 'hubs' within the network, and demonstrates some 'scale-free' properties. By using currently available tools to explore its topology, we can explore how the underlying connectivity of such a system affects the behavior of providers, and perhaps leverage that understanding to improve quality and outcomes of care.

Reliable high-power injection locked 6kHz 60W laser for ArF immersion lithography

NASA Astrophysics Data System (ADS)

Watanabe, Hidenori; Komae, Shigeo; Tanaka, Satoshi; Nohdomi, Ryoichi; Yamazaki, Taku; Nakarai, Hiroaki; Fujimoto, Junichi; Matsunaga, Takashi; Saito, Takashi; Kakizaki, Kouji; Mizoguchi, Hakaru

2007-03-01

Reliable high power 193nm ArF light source is desired for the successive growth of ArF-immersion technology for 45nm node generation. In 2006, Gigaphoton released GT60A, high power injection locked 6kHz/60W/0.5pm (E95) laser system, to meet the demands of semiconductor markets. In this paper, we report key technologies for reliable mass production GT laser systems and GT60A high durability performance test results up to 20 billion pulses.

Modeling and characterization of shielded low loss CPWs on 65 nm node silicon

NASA Astrophysics Data System (ADS)

Hongrui, Wang; Dongxu, Yang; Li, Zhang; Lei, Zhang; Zhiping, Yu

2011-06-01

Coplanar waveguides (CPWs) are promising candidates for high quality passive devices in millimeter-wave frequency bands. In this paper, CPW transmission lines with and without ground shields have been designed and fabricated on 65 nm CMOS technology. A physical-based model is proposed to describe the frequency-dependent per-unit-length L, C, R and G parameters. Starting with a basic CPW structure, the slow-wave effect and ground-shield influence have been analyzed and incorporated into the general model. The accuracy of the model is confirmed by experimental results.

Three-dimensional Optical Coherence Tomography for Optical Biopsy of Lymph Nodes and Assessment of Metastatic Disease

PubMed Central

John, Renu; Adie, Steven G.; Chaney, Eric J.; Marjanovic, Marina; Tangella, Krishnarao V.; Boppart, Stephen A.

2013-01-01

Background Numerous techniques have been developed for localizing lymph nodes before surgical resection and for their histological assessment. Nondestructive high-resolution transcapsule optical imaging of lymph nodes offers the potential for in situ assessment of metastatic involvement, potentially during surgical procedures. Methods Three-dimensional optical coherence tomography (3-D OCT) was used for imaging and assessing resected popliteal lymph nodes from a preclinical rat metastatic tumor model over a 9-day time-course study after tumor induction. The spectral-domain OCT system utilized a center wavelength of 800 nm, provided axial and transverse resolutions of 3 and 12 µm, respectively, and performed imaging at 10,000 axial scans per second. Results OCT is capable of providing high-resolution labelfree images of intact lymph node microstructure based on intrinsic optical scattering properties with penetration depths of ~1–2 mm. The results demonstrate that OCT is capable of differentiating normal, reactive, and metastatic lymph nodes based on microstructural changes. The optical scattering and structural changes revealed by OCT from day 3 to day 9 after the injection of tumor cells into the lymphatic system correlate with inflammatory and immunological changes observed in the capsule, precortical regions, follicles, and germination centers found during histopathology. Conclusions We report for the first time a longitudinal study of 3-D transcapsule OCT imaging of intact lymph nodes demonstrating microstructural changes during metastatic infiltration. These results demonstrate the potential of OCT as a technique for intraoperative, real-time in situ 3-D optical biopsy of lymph nodes for the intraoperative staging of cancer. PMID:22688663

Complete data preparation flow for Massively Parallel E-Beam lithography on 28nm node full-field design

NASA Astrophysics Data System (ADS)

Fay, Aurélien; Browning, Clyde; Brandt, Pieter; Chartoire, Jacky; Bérard-Bergery, Sébastien; Hazart, Jérôme; Chagoya, Alexandre; Postnikov, Sergei; Saib, Mohamed; Lattard, Ludovic; Schavione, Patrick

2016-03-01

Massively parallel mask-less electron beam lithography (MP-EBL) offers a large intrinsic flexibility at a low cost of ownership in comparison to conventional optical lithography tools. This attractive direct-write technique needs a dedicated data preparation flow to correct both electronic and resist processes. Moreover, Data Prep has to be completed in a short enough time to preserve the flexibility advantage of MP-EBL. While the MP-EBL tools have currently entered an advanced stage of development, this paper will focus on the data preparation side of the work for specifically the MAPPER Lithography FLX-1200 tool [1]-[4], using the ASELTA Nanographics Inscale software. The complete flow as well as the methodology used to achieve a full-field layout data preparation, within an acceptable cycle time, will be presented. Layout used for Data Prep evaluation was one of a 28 nm technology node Metal1 chip with a field size of 26x33mm2, compatible with typical stepper/scanner field sizes and wafer stepping plans. Proximity Effect Correction (PEC) was applied to the entire field, which was then exported as a single file to MAPPER Lithography's machine format, containing fractured shapes and dose assignments. The Soft Edge beam to beam stitching method was employed in the specific overlap regions defined by the machine format as well. In addition to PEC, verification of the correction was included as part of the overall data preparation cycle time. This verification step was executed on the machine file format to ensure pattern fidelity and accuracy as late in the flow as possible. Verification over the full chip, involving billions of evaluation points, is performed both at nominal conditions and at Process Window corners in order to ensure proper exposure and process latitude. The complete MP-EBL data preparation flow was demonstrated for a 28 nm node Metal1 layout in 37 hours. The final verification step shows that the Edge Placement Error (EPE) is kept below 2.25 nm over an exposure dose variation of 8%.