The effect of ambient lighting on Laser Doppler Imaging of a standardized cutaneous injury model

PubMed Central

Pham, Alan Chuong Q; Hei, Erik La; Harvey, John G; Holland, Andrew JA

2017-01-01

Objective: The aim of this study was to investigate the potential confounding effects of four different types of ambient lighting on the results of Laser Doppler Imaging (LDI) of a standardized cutaneous injury model. Methods: After applying a mechanical stimulus to the anterior forearm of a healthy volunteer and inducing a wheal and arteriolar flare (the Triple response), we used a Laser Doppler Line Scanner (LDLS) to image the forearm under four different types of ambient lighting: light-emitting-diode (LED), compact fluorescent lighting (CFL), halogen, daylight, and darkness as a control. A spectrometer was used to measure the intensity of light energy at 785 nm, the wavelength used by the scanner for measurement under each type of ambient lighting. Results: Neither the LED nor CFL bulbs emitted detectable light energy at a wavelength of 785 nm. The color-based representation of arbitrary perfusion unit (APU) values of the Triple response measured by the scanner was similar between darkness, LED, and CFL light. Daylight emitted 2 mW at 785 nm, with a slight variation tending more towards lower APU values compared to darkness. Halogen lighting emitted 6 mW of light energy at 785 nm rendering the color-based representation impossible to interpret. Conclusions: Halogen lighting and daylight have the potential to confound results of LDI of cutaneous injuries whereas LED and CFL lighting did not. Any potential sources of daylight should be reduced and halogen lighting completely covered or turned off prior to wound imaging. PMID:29348978

Bluish-green color emitting Ba2Si3O8:Eu2+ ceramic phosphors for white light-emitting diodes.

PubMed

Xiao, F; Xue, Y N; Zhang, Q Y

2009-10-15

This paper reports on the structural and optical properties of Eu(2+) activated Ba(2)Si(3)O(8) ceramic phosphors synthesized by a sol-gel method. The ceramic phosphors have been characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM) and fluorescence measurements. The structural characterization results suggest that the as-prepared phosphors are of single phase monoclinic Ba(2)Si(3)O(8) with rod-like morphology. A broad excitation band ranging from 300 to 410 nm matches well with the ultraviolet (UV) radiation of light-emitting diodes (LEDs). Upon 380 nm UV light excitation, these phosphors emit bluish-green emission centered at 500 nm with color coordination (x=0.25, y=0.40). All the obtained results indicate that the Ba(2)Si(3)O(8):Eu(2+) ceramic phosphors are promising bluish-green candidates for the phosphor-converted white LEDs.

Comparative study of the bactericidal effects of indocyanine green- and methyl aminolevulinate-based photodynamic therapy on Propionibacterium acnes as a new treatment for acne.

PubMed

Choi, Seung-Hwan; Seo, Jeong-Wan; Kim, Ki-Ho

2018-05-03

Acne vulgaris is one of the most common dermatological problems, and its therapeutic options include topical and systemic retinoids and antibiotics. However, increase in problems associated with acne treatment, such as side-effects from conventional agents and bacterial resistance to antibiotics, has led to greater use of photodynamic therapy. The purpose of this study was to compare the bactericidal effects of indocyanine green- and methyl aminolevulinate-based photodynamic therapy on Propionibacterium acnes. P. acnes were cultured under anaerobic conditions; then they were divided into three groups (control, treated with indocyanine green and treated with methyl aminolevulinate) and illuminated with different lights (630-nm light-emitting diode, 805-nm diode laser and 830-nm light-emitting diode). The bactericidal effects were evaluated by comparing each group's colony-forming units. The cultured P. acnes were killed with an 805-nm diode laser and 830-nm light-emitting diode in the indocyanine green group. No bactericidal effects of methyl aminolevulinate-based photodynamic therapy were identified. The clinical efficacy of indocyanine green-based photodynamic therapy in 21 patients was retrospectively analyzed. The Korean Acne Grading System was used to evaluate treatment efficacy, which was significantly decreased after treatment. The difference in the efficacy of the 805-nm diode laser and 830-nm light-emitting diode was not statistically significant. Although the methyl aminolevulinate-based photodynamic therapy showed no bactericidal effect, the indocyanine green-based photodynamic therapy has bactericidal effect and clinical efficacy. © 2018 Japanese Dermatological Association.

Optical property measurements of a novel type of upconverting reporter

NASA Astrophysics Data System (ADS)

Xiao, Xudong; Herring, Michael E.; Haushalter, Jeanne; Lee, Seonkyung; Kalogerakis, Kostas S.; Faris, Gregory W.

2003-07-01

We have recently developed a new type of reporter (upconverting chelate) for biomedical diagnostics. For this reporter, the light is absorbed and emitted by a lanthanide ion, rather than an organic molecule, as is the case for a typical fluorescent dye. These materials do not photobleach and have no autofluorescent background. We focus in this paper on neodymium ions complexed with the familiar chelating agents, EDTA, DPA, DTPA and DOTA. We have performed experimental measurements with one- and two-color laser light excitation for different chelate compounds. The samples are excited using two Nd:YAG-pumped dye laser systems that provide laser light near 587 nm and 800 nm. For one-color excitation, the emitted light depends quadratically on the incident laser power, as expected. Three strongly emitting lines are observed, located near 360 nm, 387 nm, and 417 nm. We observed more efficient upconversion in EDTA although the DPA chelates show comparable ground state absorbance. We have studied the influence of temporal delay between the two laser pulses and obtained the decay lifetime of the first intermediate state in the various chelated compounds.

Broadband infrared light emitting waveguides based on UV curable PbS quantum dot composites

NASA Astrophysics Data System (ADS)

Shen, Kai; Baig, Sarfaraz; Jiang, Guomin; Paik, Young-hun; Kim, Sung Jin; Wang, Michael R.

2018-02-01

We present herein the active PbS-photopolymer waveguide fabricated by vacuum assisted microfluidic (VAM) soft lithography technique. The PbS Quantum Dots (QDs) were synthesized using colloidal chemistry methods with tunable sizes and emission wavelengths, resulting in efficient light emission around 1000 nm center wavelength. The PbS QDs have demonstrated much better solubility in our newly synthesized UV curable polymer than SU-8 photoresist, verified by Photoluminescence (PL) testing. Through refractive index control, the PbS QDs-polymer core material and polymer cladding material can efficiently confine the infrared emitting light with a broad spectral bandwidth of 180 nm. Both single-mode and multi-mode light emitting waveguides have been realized.

Blue-light emitting electrochemical cells comprising pyrene-imidazole derivatives

NASA Astrophysics Data System (ADS)

Lee, Hyeonji; Sunesh, Chozhidakath Damodharan; Subeesh, Madayanad Suresh; Choe, Youngson

2018-04-01

Light-emitting electrochemical cells (LECs), the next-generation lighting sources are the potential replacements for organic light-emitting diodes (OLEDs). In recent years, organic small molecules (SMs) have established the applicability in solid-state lighting, and considered as prospective active materials for LECs with higher device performance. Here, we describe the synthesis of pyrene-imidazole based SMs, PYR1, and PYR2 that differ by one pyrene unit and their characterization by various spectroscopic methods. To investigate the thermal, photophysical, and electrochemical properties of the two synthesized compounds, we performed thermogravimetric, UV-visible, photoluminescence (PL), and voltammetric measurements. The photoluminescence (PL) emission spectra of PYR1 and PYR2 measured in the acetonitrile solution, where PYR1 and PYR2 emit in the blue spectral region with peaks aligned at 383 nm and 389 nm, respectively. The fabricated LEC devices exhibited broader electroluminescence (EL) spectra with a significant red shift of the emission maxima to 446 nm and 487 nm, with CIE coordinates of (0.17, 0.18) and (0.18, 0.25) for PYR1 and PYR2, respectively. The LECs based on PYR1 and PYR2 produced maximum brightness values of 180 and 72 cd m-2 and current densities of 55 and 27 mA cm-2, respectively.

Evaluating UV-C LED disinfection performance and investigating potential dual-wavelength synergy

EPA Science Inventory

This study evaluated ultraviolet (UV) light emitting diodes (LEDs) emitting at 260 nm, 280 nm, and the combination of 260|280 nm together for their efficacy at inactivating Escherichia. coli, MS2 coliphage, human adenovirus type 2 (HAdV2), and Bacillus pumilus spores; research in...

Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes.

PubMed

Zhao, Peng; Zhao, Hongping

2012-09-10

The enhancement of light extraction efficiency for thin-film flip-chip (TFFC) InGaN quantum wells (QWs) light-emitting diodes (LEDs) with GaN micro-domes on n-GaN layer was studied. The light extraction efficiency of TFFC InGaN QWs LEDs with GaN micro-domes were calculated and compared to that of the conventional TFFC InGaN QWs LEDs with flat surface. The three dimensional finite difference time domain (3D-FDTD) method was used to calculate the light extraction efficiency for the InGaN QWs LEDs emitting at 460nm and 550 nm, respectively. The effects of the GaN micro-dome feature size and the p-GaN layer thickness on the light extraction efficiency were studied systematically. Studies indicate that the p-GaN layer thickness is critical for optimizing the TFFC LED light extraction efficiency. Significant enhancement of the light extraction efficiency (2.5-2.7 times for λ(peak) = 460nm and 2.7-2.8 times for λ(peak) = 550nm) is achievable from TFFC InGaN QWs LEDs with optimized GaN micro-dome diameter and height.

III-nitride nanowire LEDs and diode lasers: monolithic light sources on (001) Si emitting in the 600-1300nm range

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Hazari, A.; Jahangir, S.

2018-02-01

GaN-based nanowire heterostructure arrays epitaxially grown on (001)Si substrates have unique properties and present the potential to realize useful devices. The active light-emitting region in the nanowire heterostructures are usually InGaN disks, whose composition can be varied to tune the emission wavelength. We have demonstrated light emitting diodes and edgeemitting diode lasers with power outputs 10mW with emission in the 600-1300nm wavelength range. These light sources are therefore useful for a variety of applications, including silicon photonics. Molecular beam epitaxial growth of the nanowire heterostructure arrays on (001)Si substrates and the characteristics of 1.3μm nanowire array edge emitting lasers, guided wave photodiodes and a monolithic photonic integrated circuit designed for 1.3μm operation are described.

Long Persistent Light Emitting Diode Indicators

ERIC Educational Resources Information Center

Jia, Dongdong; Ma, Yiwei; Hunter, D. N.

2007-01-01

An undergraduate laboratory was designed for undergraduate students to make long persistent light emitting diode (LED) indicators using phosphors. Blue LEDs, which emit at 465 nm, were characterized and used as an excitation source. Long persistent phosphors, SrAl[subscript 2]O[subscript 4]:Eu[superscript 2+],Dy[superscript 3+] (green) and…

Bridgman growth and luminescence properties of dysprosium doped lead potassium niobate crystal

NASA Astrophysics Data System (ADS)

Liu, Wenbin; Tian, Tian; Yang, Bobo; Xu, Jiayue; Liu, Hongde

2017-06-01

Dy-doped lead potassium niobate (Pb2KNb5O15, PKN) single crystal was grown by the modified vertical Bridgman method through spontaneous nucleation. The crystal was brownish, transparent and inclusion free. Five excitation peaks of Dy3+ ions were clearly seen from near ultraviolet region to blue range. It was unique that the excitation peaks in blue range were more intense, especially the one centered at 455 nm. The emission bands consisted of blue, yellow and red emissions, which were at about 487 nm, 573 nm and 662 nm respectively. The CIE chromaticity diagram of PKN:Dy indicated that white light and yellow light could be emitted when the crystal was excited under near ultraviolet light and blue light, respectively. Thus PKN:Dy crystal is a candidate material whose emitting light could be tunable through changing the excited light wavelength.

Caenorhabditis elegans as a model to study the impact of exposure to light emitting diode (LED) domestic lighting.

PubMed

Abdel-Rahman, Fawzia; Okeremgbo, Bethel; Alhamadah, Fatimah; Jamadar, Sakha; Anthony, Kevin; Saleh, Mahmoud A

2017-04-16

This study aimed to investigate the biological impact of exposure on domestic light emitting diodes (LED) lighting using the free-living nematode Caenorhabditis elegans as a model. Nematodes were separately exposed to white LED light covering the range of 380-750 nm, blue light at 450 nm and black light at 380-420 nm for one life cycle (egg to adult) with dark exposure as the control. Each light range induced stress to the nematode C. elegans such as reducing the number of the hatched eggs and/or delayed the maturation of the hatched eggs to the adult stage. In addition, it lowered or prevented the ability of adults to lay eggs and impaired the locomotion in the exposed worms. The observed type of biological stress was also associated with the production of reactive oxygen species (ROS) as compared to nematodes grown in the dark. It is concluded that the blue light component of white LED light may cause health problems, and further investigation is required to test commercial brands of white LEDs that emit different amounts of blue light.

Inhibition of enteric pathogens and surrogates using integrated, high intensity 405nm led light on the surface of almonds

USDA-ARS?s Scientific Manuscript database

The disinfecting properties of 405 nm light were investigated against Escherichia coli O157:H7, Salmonella, and their non-pathogenic surrogate bacteria on the surface of almonds. High intensity monochromatic blue light (MBL) was generated from an array of narrow-band 405 nm light-emitting diodes (LE...

Enhancement of electron injection in inverted bottom-emitting organic light-emitting diodes using Al/LiF compound thin film

NASA Astrophysics Data System (ADS)

Nie, Qu-yang; Zhang, Fang-hui

2018-05-01

The inverted bottom-emitting organic light-emitting devices (IBOLEDs) were prepared, with the structure of ITO/Al ( x nm)/LiF (1 nm)/Bphen (40 nm)/CBP: GIr1 (14%):R-4b (2%) (10 nm)/BCP (3 nm)/CBP:GIr1 (14%):R-4b (2%) (20 nm)/TCTA (10 nm)/NPB (40 nm)/MoO3 (40 nm)/Al (100 nm), where the thickness of electron injection layer Al ( x) are 0 nm, 2 nm, 3 nm, 4 nm and 5 nm, respectively. In this paper, the electron injection condition and luminance properties of inverted devices were investigated by changing the thickness of Al layer in Al/LiF compound thin film. It turns out that the introduction of Al layer can improve electron injection of the devices dramatically. Furthermore, the device exerts lower driving voltage and higher current efficiency when the thickness of electron injection Al layer is 3 nm. For example, the current efficiency of the device with 3-nm-thick Al layer reaches 19.75 cd·A-1 when driving voltage is 7 V, which is 1.24, 1.17 and 17.03 times larger than those of the devices with 2 nm, 4 nm and 5 nm Al layer, respectively. The device property reaches up to the level of corresponding conventional device. In addition, all inverted devices with electron injection Al layer show superior stability of color coordinate due to the adoption of co-evaporation emitting layer and BCP spacer-layer, and the color coordinate of the inverted device with 3-nm-thick Al layer only changes from (0.580 6, 0.405 6) to (0.532 8, 0.436 3) when driving voltage increases from 6 V to 10 V.

Recombination zone in white organic light emitting diodes with blue and orange emitting layers

NASA Astrophysics Data System (ADS)

Tsuboi, Taiju; Kishimoto, Tadashi; Wako, Kazuhiro; Matsuda, Kuniharu; Iguchi, Hirofumi

2012-10-01

White fluorescent OLED devices with a 10 nm thick blue-emitting layer and a 31 nm thick orange-emitting layer have been fabricated, where the blue-emitting layer is stacked on a hole transport layer. An interlayer was inserted between the two emitting layers. The thickness of the interlayer was changed among 0.3, 0.4, and 1.0 nm. White emission with CIE coordinates close to (0.33, 0.33) was observed from all the OLEDs. OLED with 0.3 nm thick interlayer gives the highest maximum luminous efficiency (11 cd/A), power efficiency (9 lm/W), and external quantum efficiency (5.02%). The external quantum efficiency becomes low with increasing the interlayer thickness from 0 nm to 1.0 nm. When the location of the blue- and orange-emitting layers is reversed, white emission was not obtained because of too weak blue emission. It is suggested that the electron-hole recombination zone decreases nearly exponentially with a distance from the hole transport layer.

Instense red phosphors for UV light emitting diode devices.

PubMed

Cao, Fa-Bin; Tian, Yan-Wen; Chen, Yong-Jie; Xiao, Lin-Jiu; Liu, Yun-Yi

2010-03-01

Ca(x)Sr1-x-1.5y-0.5zMoO4:yEu3+ zNa+ red phosphors were prepared by solid-state reaction using Na+ as charge supply for LEDs (light emitting diodes). The content of charge compensator, Ca2+ concentration, synthesis temperature, reaction time, and Eu3+ concentration were the keys to improving the properties of luminescence and crystal structure of red phosphors. The photoluminescence spectra shows the red phosphors are effectively excited at 616 nm by 311 nm, 395 nm, and 465 nm light. The wavelengths of 395 and 465 nm nicely match the widely applied emission wavelengths of ultraviolet or blue LED chips. Its chromaticity coordinates (CIE) are calculated to be x = 0.65, y = 0.32. Bright red light can be observed by the naked eye from the LED-based Ca0.60Sr0.25MoO4:0.08Eu3+ 0.06Na+.

Inhibition of enteric pathogens using integrated high intensity 405 nm LED on the surface of almonds

USDA-ARS?s Scientific Manuscript database

The disinfecting properties of 405 nm light were investigated against Escherichia coli O157:H7, Salmonella, and their non-pathogenic surrogates inoculated onto the surface of almonds. High intensity monochromatic light was generated from an array of narrow-band 405 nm light emitting diodes (LED). Al...

Importance of 'blue' photon levels for lettuce seedlings grown under red-light-emitting diodes

NASA Technical Reports Server (NTRS)

Hoenecke, M. E.; Bula, R. J.; Tibbitts, T. W.

1992-01-01

Light-emitting diodes (LEDs) with high-intensity output are being studied as a photosynthetic light source for plants. High-output LEDs have peak emission at approximately 660 nm concentrated in a waveband of +/- 30 nm. Lettuce (Lactuca sativa Grand Rapids') seedlings developed extended hypocotyls and elongated cotyledons when grown under these LEDs as a sole source of irradiance. This extension and elongation was prevented when the red LED radiation was supplemented with more than 15 micromoles m-2 s-1 of 400- to 500-nm photons from blue fluorescent lamps. Blue radiation effects were independent of the photon level of the red radiation.

High-brightness and high-color purity red-emitting Ca3Lu(AlO)3(BO3)4:Eu3+ phosphors with internal quantum efficiency close to unity for near-ultraviolet-based white-light-emitting diodes.

PubMed

Huang, Xiaoyong; Wang, Shaoying; Li, Bin; Sun, Qi; Guo, Heng

2018-03-15

In this work, we reported on high-brightness Eu 3+ -activated Ca 3 Lu(AlO) 3 (BO 3 ) 4 (CLAB) red-emitting phosphors. Under 397 nm excitation, the CLAB:Eu 3+ phosphors showed intense red emissions at around 621 nm with CIE coordinates of (0.657, 0.343). The optimal doping concentration of Eu 3+ ions was found to be 30 mol. %, and the CLAB:0.3Eu 3+ sample possessed high-color purity of 93% and ultra-high internal quantum efficiency as great as 98.5%. Importantly, the CLAB:0.3Eu 3+ also had good thermal stability. Finally, a white-light-emitting diode (WLED) lamp with good color-rendering index was fabricated by using a 365 nm ultraviolet chip and the phosphor blends of CLAB:0.3Eu 3+ red-emitting phosphors, (Ba,Sr) 2 SiO 4 :Eu 2+ green-emitting phosphors, and BaMgAl 10 O 7 :Eu 2+ blue-emitting phosphors.

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

PubMed Central

Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

2010-01-01

White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450−480 nm) and nUV (380−400 nm) LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+) is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

Light Emitting Diode Flashlights as Effective and Inexpensive Light Sources for Fluorescence Microscopy

PubMed Central

Robertson, J. Brian; Zhang, Yunfei; Johnson, Carl Hirschie

2009-01-01

Summary Light-emitting diodes (LEDs) are becoming more commonly used as light sources for fluorescence microscopy. We describe the adaptation of a commercially available LED flashlight for use as a source for fluorescence excitation. This light source is long-lived, inexpensive, and is effective for excitation in the range of 440–600 nm. PMID:19772530

Polarization of edge emission from III-nitride light emitting diodes of emission wavelength from 395 to 455 nm

NASA Astrophysics Data System (ADS)

Jia, Chuanyu; Yu, Tongjun; Mu, Sen; Pan, Yaobo; Yang, Zhijian; Chen, Zhizhong; Qin, Zhixin; Zhang, Guoyi

2007-05-01

Polarization-resolved edge-emitting electroluminescence of InGaN /GaN multiple quantum well (MQW) light emitting diodes (LEDs) from 395to455nm was measured. Polarization ratio decreased from 3.2 of near-ultraviolet LEDs (395nm) to 1.9 of blue LEDs (455nm). Based on TE mode dominant emissions in InGaN /GaN MQWs, compressive strain in well region favors TE mode, indium induced quantum-dot-like behavior leads to an increased TM component. As wavelength increased, indium enhanced quantum-dot-like behavior became obvious and E ‖C electroluminescence signal increased thus lower polarization ratio. Electroluminescence spectrum shifts confirmed that quantum dotlike behaviors rather than strain might be dominant in modifying luminescence mode of InGaN /GaN MQWs from near ultraviolet to blue.

Comparative experimental and simulation studies of high-power AlGaN-based 353 nm ultraviolet flip-chip and top-emitting LEDs

NASA Astrophysics Data System (ADS)

Liu, Mengling; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Ding, Xinghuo

2018-03-01

Experimental and simulation studies of high-power AlGaN-based 353 nm ultraviolet (UV) flip-chip (FC) and top-emitting (TE) light-emitting diodes (LEDs) are performed here. To improve the optical and electrical properties of ultraviolet LEDs, we fabricate high-power FC-UV LEDs with Ta2O5/SiO2 distributed Bragg reflectors (DBRs) and a strip-shaped SiO2 current blocking layer (CBL). The reflectance of fourteen pairs of Ta2O5/SiO2 DBRs is 96.4% at 353 nm. The strip-shaped SiO2 CBL underneath the strip-shaped p-electrode can prevent the current concentrating in regions immediately adjacent to the p-electrode where the overlying opaque p-electrode metal layer absorbs the emitted UV light. Moreover, two-level metallization electrodes are used to improve current spreading. Our numerical results show that FC-UV LED has a more favorable current spreading uniformity than TE-UV LED. The light output power of 353 nm FC-UV LED was 23.22 mW at 350 mA, which is 24.7% higher than that of TE-UV LED.

Modeling of light-emitting diode wavefronts for the optimization of transmission holograms.

PubMed

Karthaus, Daniela; Giehl, Markus; Sandfuchs, Oliver; Sinzinger, Stefan

2017-06-20

The objective of applying transmission holograms in automotive headlamp systems requires the adaptation of holograms to divergent and polychromatic light sources like light-emitting diodes (LEDs). In this paper, four different options to describe the scalar light waves emitted by a typical automotive LED are regarded. This includes a new approach to determine the LED's wavefront from interferometric measurements. Computer-generated holograms are designed considering the different LED approximations and recorded into a photopolymer. The holograms are reconstructed with the LED and the resulting images are analyzed to evaluate the quality of the wave descriptions. In this paper, we show that our presented new approach leads to better results in comparison to other wave descriptions. The enhancement is evaluated by the correlation between reconstructed and ideal images. In contrast to the next best approximation, a spherical wave, the correlation coefficient increased by 0.18% at 532 nm, 1.69% at 590 nm, and 0.75% at 620 nm.

Fabrication and characterization of n-ZnO nanonails array/p(+)-GaN heterojunction diode.

PubMed

Zhu, G Y; Chen, G F; Li, J T; Shi, Z L; Lin, Y; Ding, T; Xu, X Y; Dai, J; Xu, C X

2012-10-01

A novel heterojunctional structure of n-ZnO nanonails array/p(+)-GaN light-emitting diode was fabricated by Chemical Vapor Deposition method. A broad electroluminescence spectrum shows two peaks centered at 435 nm and 478 nm at room temperature, respectively. By comparing the photoluminescence and electroluminescence spectra, together with analyzing the energy band structure of heterojunction light emitting diode, it suggested that the electroluminescence peak located at 435 nm originates from Mg acceptor level of p(+)-GaN layer, whereas the electroluminescence peak located at 478 nm originates from the defects of n-ZnO nanonails array.

Use of coupled wavelength ultraviolet light-emitting diodes for inactivation of bacteria in subsea oil-field injection water.

PubMed

Qiao, Yang; Chen, Daoyi; Wen, Diya

2018-06-04

The development of subsea injection water disinfection systems will enable the novel exploration of offshore oilfields. Ultraviolet light emitting diodes (UV-LEDs) with peak wavelengths at 255 nm, 280 nm, 350 nm, and combinations of 255 nm and 350 nm, and 280 nm and 350 nm were investigated in this study to determine their efficiency at disinfecting saprophytic bacteria, iron bacteria, and sulfate reducing bacteria. Results show that UV-LEDs with peak wavelengths at 280 nm were the most practical in this domain because of their high performance in both energy-efficiency and reactivation suppression, although 255 nm UV-LEDs achieved an optimal germicidal effect in dose-based experiments. The use of combined 280 nm and 350 nm wavelengths also induced synergistic bactericidal effects on saprophytic bacteria. Copyright © 2018. Published by Elsevier B.V.

Wheat Under LED's (Light Emitting Diodes)

NASA Technical Reports Server (NTRS)

2004-01-01

Astroculture is a suite of technologies used to produce and maintain a closed controlled environment for plant growth. The two most recent missions supported growth of potato, dwarf wheat, and mustard plants, and provided scientists with the first opportunity to conduct true plant research in space. Light emitting diodes have particular usefulness for plant growth lighting because they emit a much smaller amount of radiant heat than do conventional lighting sources and because they have potential of directing a higher percentage of the emitted light onto plants surfaces. Furthermore, the high output LED's have emissions in the 600-700 nm waveband, which is of highest efficiency for photosynthesis by plants.

Surface exciton emission of MgO crystals

NASA Astrophysics Data System (ADS)

Kuang, Wen-Jian; Li, Qing; Chen, Yu-Xiang; Hu, Kai; Wang, Ning-Hui; Xing, Fang-Li; Yan, Qun; Sun, Shuai-Shuai; Huang, Yan; Tao, Ye; Tolner, Harm

2013-09-01

MgO crystals have been exposed to vacuum ultraviolet (VUV) radiation from a synchrotron, with energies up to 9 eV, and the emitted light, at wavelengths above 200 nm, was observed. It is concluded that bulk excitons, play an important role in the diffusion of energy inside MgO crystals, resulting in 5.85 eV (212 nm) emission from the MgO terraces of large (0.2-2 µm) MgO : F crystals. In the case of aliovalent impurity doping, then the bulk exciton energy is also transferred to the Vk centres and 5.3 eV (235 nm) light is emitted. Both fluorine and silicon doping appear to promote UV surface emission, acting similarly to an ns2 ion inside MgO, while strong scandium doping is killing the surface emission completely. The 212 nm surface UV emission and the 235 nm bulk UV emission can be excited only at the bandgap edge. Broadband visible light, centred around 400 nm, is also emitted. Contrary to the UV emission, this is not generated when excited at the bandgap edge; instead, we find that it is only excited at sub-bandgap energies, with a maximum at the 5C surface excitation energy of 5.71 eV (217 nm) for the MgO terraces.

High power ultraviolet light emitting diodes based on GaN /AlGaN quantum wells produced by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Cabalu, J. S.; Bhattacharyya, A.; Thomidis, C.; Friel, I.; Moustakas, T. D.; Collins, C. J.; Komninou, Ph.

2006-11-01

In this paper, we report on the growth by molecular beam epitaxy and fabrication of high power nitride-based ultraviolet light emitting diodes emitting in the spectral range between 340 and 350nm. The devices were grown on (0001) sapphire substrates via plasma-assisted molecular beam epitaxy. The growth of the light emitting diode (LED) structures was preceded by detailed materials studies of the bottom n-AlGaN contact layer, as well as the GaN /AlGaN multiple quantum well (MQW) active region. Specifically, kinetic conditions were identified for the growth of the thick n-AlGaN films to be both smooth and to have fewer defects at the surface. Transmission-electron microscopy studies on identical GaN /AlGaN MQWs showed good quality and well-defined interfaces between wells and barriers. Large area mesa devices (800×800μm2) were fabricated and were designed for backside light extraction. The LEDs were flip-chip bonded onto a Si submount for better heat sinking. For devices emitting at 340nm, the measured differential on-series resistance is 3Ω with electroluminescence spectrum full width at half maximum of 18nm. The output power under dc bias saturates at 0.5mW, while under pulsed operation it saturates at approximately 700mA to a value of 3mW, suggesting that thermal heating limits the efficiency of these devices. The output power of the investigated devices was found to be equivalent with those produced by the metal-organic chemical vapor deposition and hydride vapor-phase epitaxy methods. The devices emitting at 350nm were investigated under dc operation and the output power saturates at 4.5mW under 200mA drive current.

Numerical study of the light output intensity of the bilayer organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Lu, Feiping

2017-02-01

The structure of organic light-emitting diodes (OLEDs) is one of most important issues that influence the light output intensity (LOI) of OLEDs. In this paper, based on a simple but accurate optical model, the influences of hole and electron transport layer thickness on the LOI of bilayer OLEDs, which with N,N0- bis(naphthalen-1-yl)-N,N0- bis(phenyl)- benzidine (NPB) or N,N'- diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4-diamine (TPD) as hole transport layer, with tris(8-hydroxyquinoline) aluminum (Alq3) as electron transport and light emitting layers, were investigated. The laws of LOI for OLEDs under different organic layer thickness values were obtained. The results show that the LOI of devices varies in accordance with damped cosine or sine function as the increasing of organic layer thickness, and the results show that the bilayer OLEDs with the structure of Glass/ITO/NPB (55 nm)/Alq3 (75 nm)/Al and Glass/ITO/TPB (60 nm)/Alq3 (75 nm)/Al have most largest LOI. When the thickness of Alq3 is less than 105 nm, the OLEDs with TPD as hole transport layer have larger LOI than that with NPB as hole transport layer. The results obtained in this paper can present an in-depth understanding of the working mechanism of OLEDs and help ones fabricate high efficiency OLEDs.

Silicon Based Colloidal Quantum Dot and Nanotube Lasers

DTIC Science & Technology

2013-03-01

carrier density is theoretically and experimentally derived to be inversely proportional to the diameter; (b) demonstration of InGaN/ GaN light emitting...diodes and GaN single nanowire photonic crystal laser on silicon characterized by a lasing transition at λ=371.3 nm with a linewidth of 0.55 nm. The...derived to be inversely proportional to the diameter; (b) demonstration of InGaN/ GaN light emitting diodes and GaN single nanowire photonic crystal

Organization of the Topical Meeting on Tunable Solid State Lasers Held in North Falmouth, Massachusetts on 1-3 May 1989

DTIC Science & Technology

1989-08-30

nm to produce blue light at 455 nm (Figure 1). A 20 Hz doubled Nd:YAG pump laser emitting up to 150 mJ at 532 nm 147 WA4-2 was used to resonantly...pumped by a diode laser, then in addition to the processes of Fig. 1, excited state absorption of the pump light from both 4I13,/z and 4I3112 may be...are visible and UV systems pumped at wavelengths that are available from semiconductor diode lasers and infrared emitting systems having high slope

High efficiency white organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Gang; Dong, Weili; Gao, Hongyan; Tian, Xiaocui; Zhao, Lina; Jiang, Wenlong; Zhang, Xiyan

2015-06-01

The light emitting diodes with the structure of ITO/ m-MTDATA(20 nm)/NPB(10 nm)/CBP BCzVBi ( x, nm, 10%)/CBP(3 nm)/CBP: Ir(ppy)3: DCJTB(10 nm, 8 and 1%)/Bphen(30 nm)/Cs2CO3: Ag2O (2 nm, 20%)/Al (100 nm) employing phosphorescence sensitization and fluorescence doping, were manufactured. The performance of the devices was studied by adjusting the thickness of fluorescence dopant layer ( x = 15, 20, 25, and 30). The best performance was achieved when its thickness was 25 nm. The device has the maximum luminance of 20260 cd/m2 at applied voltage of 14 V and the maximum current efficiency of 11.70 cd/A at 7 V. The device displays a continuous change of color from yellow to white. The CIE coordinates change from (0.49, 0.48) to (0.32, 0.39) when the driving voltage is varied from 5 to 15 V.

Comparative clinical study using laser and LED-therapy for orofacial pain relief: dentin hypersensitivity and cervicogenic headache

NASA Astrophysics Data System (ADS)

Lizarelli, Rosane F. Z.; Pizzo, Renata C. A.; Florez, Fernando L. E.; Grecco, Clovis; Speciali, Jose G.; Bagnato, Vanderlei S.

2015-06-01

Considering several clinical situations, low intensity laser therapy has been widely applied in pain relief or analgesia mechanism. With the advent of new LED-based (light emitting diode) light sources, the need of further clinical experiments aiming to compare the effectiveness among them is paramount. The LED system therapeutic use can be denominated as LEDT - Light Emitting Diode Therapy. This study proposed two clinical evaluations of pain relief effect: to dentin hypersensitivity and to cervicogenic headache using different sources of lasers (low and high intensity) and light emitting diodes (LEDs), one emitting at the spectral band of red (630+/- 5nm) and the other one at infrared band (880+/- 5nm). Two different clinical studies were performed and presented interesting results. Considering dentin hypersensitivity, red and infrared led were so effective than the control group (high intensity laser system); by the other side, considering cervicogenic headache, control group (infrared laser) was the best treatment in comparison to red and infrared led system.

Ag nanocluster-based color converters for white organic light-emitting devices

NASA Astrophysics Data System (ADS)

Nishikitani, Yoshinori; Takizawa, Daisuke; Uchida, Soichi; Lu, Yue; Nishimura, Suzushi; Oyaizu, Kenichi; Nishide, Hiroyuki

2017-11-01

The authors present Ag nanocluster-based color converters (Ag NC color converters), which convert part of the blue light from a light source to yellow light so as to create white organic light-emitting devices that could be suitable for lighting systems. Ag NCs synthesized by poly(methacrylic acid) template methods have a statistical size distribution with a mean diameter of around 4.5 nm, which is larger than the Fermi wavelength of around 2 nm. Hence, like free electrons in metals, the Ag NC electrons are thought to form a continuous energy band, leading to the formation of surface plasmons by photoexcitation. As for the fluorescence emission mechanism, the fact that the photoluminescence is excitation wavelength dependent suggests that the fluorescence originates from surface plasmons in Ag NCs of different sizes. By using Ag NC color converters and suitable blue light sources, white organic light-emitting devices can be fabricated based on the concept of light-mixing. For our blue light sources, we used polymer light-emitting electrochemical cells (PLECs), which, like organic light-emitting diodes, are area light sources. The PLECs were fabricated with a blue fluorescent π-conjugated polymer, poly[(9,9-dihexylfluoren-2,7-diyl)-co-(anthracen-9,10-diyl)] (PDHFA), and a polymeric solid electrolyte composed of poly(ethylene oxide) and KCF3SO3. In this device structure, the Ag NC color converter absorbs blue light from the PDHFA-based PLEC (PDHFA-PLEC) and then emits yellow light. When the PDHFA-PLEC is turned on by applying an external voltage, pure white light emission can be produced with Commission Internationale de l'Eclairage coordinates of (x = 0.32, y = 0.33) and a color rendering index of 93.6. This study shows that utilization of Ag NC color converters and blue PLECs is a very promising and highly effective method for realizing white organic light-emitting devices.

Stable blue phosphorescent organic light emitting devices

DOEpatents

Forrest, Stephen R.; Thompson, Mark; Giebink, Noel

2014-08-26

Novel combination of materials and device architectures for organic light emitting devices is provided. An organic light emitting device, is provided, having an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer includes a host and a phosphorescent emissive dopant having a peak emissive wavelength less than 500 nm, and a radiative phosphorescent lifetime less than 1 microsecond. Preferably, the phosphorescent emissive dopant includes a ligand having a carbazole group.

Synthesis and luminescent properties of Tb3Al5O12:Ce3+ phosphors for warm white light emitting diodes

NASA Astrophysics Data System (ADS)

Meng, Qinghuan; Liu, Ying; Fu, Yujie; Zu, Yuangang; Zhou, Zhenbao

2018-01-01

A series of Tb3Al5O12:Ce3+ phosphors were successfully synthesized by a precipitation method. The pure Tb3Al5O12 phase was obtained in the synthesized Tb3Al5O12:Ce3+ phosphors after heat treatments at 500 °C in air for 3 h. The excitation spectra of Tb3Al5O12:Ce3+ phosphors include excitation bands corresponding to Tb3+ and Ce3+ ions. Under the excitation at 455 nm, Tb3Al5O12:Ce3+ phosphors show emission band at around 553 nm. The critical doping concentration of Ce3+ in Tb3Al5O12 is 6mol%, which shows the highest emission intensity. White light-emitting diodes were fabricated by combining InGaN-based blue light-emitting diodes with Tb3Al5O12:Ce3+ and Y3Al5O12:Ce3+ phosphors. The Tb3Al5O12:Ce3+ based white light-emitting diode shows a lower color temperature than that of Y3Al5O12:Ce3+ based white light-emitting diode. The experimental results clearly indicate that the prepared Tb3Al5O12:Ce3+ has potential applications in white light emitting diodes.

Improved performance of organic light-emitting diodes with MoO3 interlayer by oblique angle deposition.

PubMed

Liu, S W; Divayana, Y; Sun, X W; Wang, Y; Leck, K S; Demir, H V

2011-02-28

We fabricated and demonstrated improved organic light emitting diodes (OLEDs) in a thin film architecture of indium tin oxide (ITO)/ molybdenum trioxide (MoO3) (20 nm)/N,N'-Di(naphth-2-yl)-N,N'-diphenyl-benzidine (NPB) (50 nm)/ tris-(8-hydroxyquinoline) (Alq3) (70 nm)/Mg:Ag (200 nm) using an oblique angle deposition technique by which MoO3 was deposited at oblique angles (θ) with respect to the surface normal. It was found that, without sacrificing the power efficiency of the device, the device current efficiency and external quantum efficiency were significantly enhanced at an oblique deposition angle of θ=60° for MoO3.

Recent developments in white light emitting diodes

NASA Astrophysics Data System (ADS)

Lohe, P. P.; Nandanwar, D. V.; Belsare, P. D.; Moharil, S. V.

2018-05-01

In the recent years solid state lighting based on LEDs has revolutionized lighting technology. LEDs have many advantages over the conventional lighting based on fluorescent and incandescent lamps such as mercury free, high conversion efficiency of electrical energy into light, long lifetime reliability and ability to use with many types of devices. LEDs have emerged as a new potentially revolutionary technology that could save up to half of energy used for lighting applications. White LEDs would be the most important light source in the future, so much so that this aspect had been highlighted by the Nobel committee during the award of 2014 Nobel Prize for Physics. Recent advancement in the fabrication of GaN chip capable of emitting in blue and near UV region paved way for fabrication of white LED lamps. Mainly there are two approaches used for preparing white emitting solid state lamp. In the first approach blue light (λ=450 nm) emitted from the InGaN LED chip is partially absorbed by the YAG:Ce3+ phosphor coated on it and re-emitted as yellow fluorescence. A white light can be generated by the combination of blue + yellow emission bands. These lamps are already available. But they are suffering from major drawback that their Colour Rendering Index (CRI) is low. In the second approach, white LEDs are made by coating near ultraviolet emitting (360 to 410nm) LED with a mixture of high efficiency red, green and blue emitting phosphors, analogous to the fluorescent lamp. This method yields lamps with better color rendition. Addition of a yellow emitting phosphor improves CRI further. However conversion efficiency is compromised to some extent. Further the cost of near UV emitting chip is very high compared to blue emitting chips. Thus cost and light output wise, near UV chips are much inferior to blue chips. Recently some rare earth activated oxynitrides, silicates, fluorides have emerged as an important family of luminescent materials for white LED application because they can emit visible light strongly under blue light irradiation. These are chemically, thermally and mechanically stable materials with high efficiency to down convert blue radiation into green and red. Efficient white light can be generated by coating these phosphors on blue LED.CRI of white emitting LED lamp can be improved significantly if green and red emitting phosphors are coated on efficient blue emitting LED chips. In this approach CRI will be maintained if appropriate combination of red, green along with blue emission is used. This article reviews some recent developments in phosphors for white light emitting diodes.

Development of a new water sterilization device with a 365 nm UV-LED.

PubMed

Mori, Mirei; Hamamoto, Akiko; Takahashi, Akira; Nakano, Masayuki; Wakikawa, Noriko; Tachibana, Satoko; Ikehara, Toshitaka; Nakaya, Yutaka; Akutagawa, Masatake; Kinouchi, Yohsuke

2007-12-01

Ultraviolet (UV) irradiation is an effective disinfection method. In sterilization equipment, a low-pressure mercury lamp emitting an effective germicidal UVC (254 nm) is used as the light source. However, the lamp, which contains mercury, must be disposed of at the end of its lifetime or following damage due to physical shock or vibration. We investigated the suitability of an ultraviolet light-emitting diode at an output wavelength of 365 nm (UVA-LED) as a sterilization device, comparing with the other wavelength irradiation such as 254 nm (a low-pressure mercury lam) and 405 nm (LED). We used a commercially available UVA-LED that emitted light at the shortest wavelength and at the highest output energy. The new sterilization system using the UVA-LED was able to inactivate bacteria, such as Escherichia coli DH5 alpha, Enteropathogenic E. coli, Vibrio parahaemolyticus, Staphylococcus aureus, and Salmonella enterica serovar Enteritidis. The inactivations of the bacteria were dependent on the accumulation of UVA irradiation. Taking advantage of the safety and compact size of LED devices, we expect that the UVA-LED sterilization device can be developed as a new type of water sterilization device.

Luminescent properties of MAl(SO4)2 Br:Eu(3+) (M = Sr or Mg) red phosphors for near-UV light-emitting diodes.

PubMed

Deshmukh, Priti B; Puppalwar, S P; Dhoble, N S; Dhoble, S J

2015-02-01

Eu(3+) -activated MAl(SO4 )2 Br phosphors (where M = Mg or Sr) are successfully prepared using a wet chemical reaction technique. The samples are characterized by X-ray diffraction (XRD) and photoluminescence (PL) spectroscopies. The XRD pattern revealed that both the samples are microcrystalline in nature. PL of Eu(3+) -doped SrAl(SO4 )2 Br and MgAl(SO4 )2 Br phosphors exhibited characteristic red emission coming from the (5) D0  → (7) F2 (616 nm) electron transition, when excited by 396 nm wavelength of light. The maximum intensity of luminescence was observed at a concentration of 1 mol% Eu(3+) . The intensity of the electric dipole transition at 616 nm is greater than that of the magnetic dipole transition at 594 nm. The results showed that MAl(SO4 )2 Br:Eu(3+) , (M = Mg, Sr) phosphors have potential application in near-UV light-emitting diodes as efficient red-emitting phosphor. Copyright © 2014 John Wiley & Sons, Ltd.

Influence of electron transport layer thickness on optical properties of organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Guohong; Liu, Yong; Li, Baojun

2015-06-07

We investigate experimentally and theoretically the influence of electron transport layer (ETL) thickness on properties of typical N,N′-diphenyl-N,N′-bis(1-naphthyl)-[1,1′-biphthyl]-4,4′-diamine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq{sub 3}) heterojunction based organic light-emitting diodes (OLEDs), where the thickness of ETL is varied to adjust the distance between the emitting zone and the metal electrode. The devices showed a maximum current efficiency of 3.8 cd/A when the ETL thickness is around 50 nm corresponding to an emitter-cathode distance of 80 nm, and a second maximum current efficiency of 2.6 cd/A when the ETL thickness is around 210 nm corresponding to an emitter-cathode distance of 240 nm. We adopt a rigorous electromagnetic approach that takesmore » parameters, such as dipole orientation, polarization, light emitting angle, exciton recombination zone, and diffusion length into account to model the optical properties of devices as a function of varying ETL thickness. Our simulation results are accurately consistent with the experimental results with a widely varying thickness of ETL, indicating that the theoretical model may be helpful to design high efficiency OLEDs.« less

Ultraviolet electroluminescence from zinc oxide nanorods/deoxyribonucleic acid hybrid bio light-emitting diode

NASA Astrophysics Data System (ADS)

Gupta, Rohini Bhardwaj; Nagpal, Swati; Arora, Swati; Bhatnagar, Pramod Kumar; Mathur, Parmatma Chandra

2011-01-01

Ultraviolet (UV) light-emitting diode using salmon deoxyribonucleic acid (sDNA)-cetyltrimethylammonium complex as an electron blocking layer and zinc oxide (ZnO) nanorods as emissive material was fabricated. UV emission, which was blue shifted up to 335 nm with respect to the band edge emission of 390 nm, was observed. This blue shift was caused due to accumulation of electrons in the conduction band of ZnO because of a high potential barrier existing at the sDNA/ZnO interface.

Development of 1300 nm GaAs-Based Microcavity Light-Emitting Diodes

DTIC Science & Technology

2001-06-01

vertical - cavity surface emitting lasers ( VCSEL ) and micro- cavity light- emitting diodes (MC-LED) for short-to-medium... epitaxial growth run [1 ]. Self-organized In(Ga)As quantum dot (QD) heterostructures grown by molecular beam epitaxy ( MBE ) are promising candidates as...successfully grown by molecular beam epitaxy on GaAs substrates without the need to rely on any in-situ calibration technique. Fabricated

Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer.

PubMed

Lu, Tzu-Chun; Ke, Min-Yung; Yang, Sheng-Chieh; Cheng, Yun-Wei; Chen, Liang-Yi; Lin, Guan-Jhong; Lu, Yu-Hsin; He, Jr-Hau; Kuo, Hao-Chung; Huang, JianJang

2010-12-15

Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.

A novel orange-red emitting NaCaVO{sub 4}:Sm{sup 3+} phosphor for solid state lighting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Biswas, Pankaj, E-mail: pankaj79biswas@gmail.com; Kumar, Vinay, E-mail: vinaykdhiman@yahoo.com; Ntwaeaborwa, O. M.

2016-05-06

The samarium doped NaCaVO{sub 4} phosphor was synthesized by the combustion method. The X-ray powder diffraction (XRD) analysis confirmed that the phosphor powder crystallized as orthorhombic structure belonging to space group Cmcm. From Williamson-Hall analysis the grain size and microstrain in the powder was estimated. The Fourier- transform infrared (FT-IR) studies further validated the formation of vanadate phase of the phosphor. Photoluminescence (PL) study revealed that the phosphor could be efficiently excited by UV-VIS from 200 nm to 500 nm. The 565 nm, 602 nm, 648 nm and 713 nm emissions were ascribed to {sup 4}G{sub 5/2} to {sup 6}H{submore » J} (J = 5/2, 7/2, 9/2 and 11/2) transitions of the Sm{sup 3+} ion. The present material may be explored as a novel phosphor to be excited by UV light emitting diodes (LEDs) chips for solid-state lighting and display applications.« less

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes

PubMed Central

Hsu, Kai-Chiang; Hsiao, Wei-Hua; Lee, Ching-Ting; Chen, Yan-Ting; Liu, Day-Shan

2015-01-01

This paper addressed the effect of post-annealed treatment on the electroluminescence (EL) of an n-ZnO/p-GaN heterojunction light-emitting diode (LED). The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The origins of the light emission for these LEDs annealed at various temperatures were studied using measurements of electrical property, photoluminescence, and Auger electron spectroscopy (AES) depth profiles. A blue-violet emission located at 430 nm was associated with intrinsic transitions between the bandgap of n-ZnO and p-GaN, the green-yellow emission at 550 nm mainly originating from the deep-level transitions of native defects in the n-ZnO and p-GaN surfaces, and the red emission at 610 nm emerging from the Ga-O interlayer due to interdiffusion at the n-ZnO/p-GaN interface. The above-mentioned emissions also supported the EL spectra of LEDs annealed at 700 °C under air, nitrogen, and oxygen atmospheres, respectively. PMID:28793675

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes.

PubMed

Hsu, Kai-Chiang; Hsiao, Wei-Hua; Lee, Ching-Ting; Chen, Yan-Ting; Liu, Day-Shan

2015-11-16

This paper addressed the effect of post-annealed treatment on the electroluminescence (EL) of an n -ZnO/ p -GaN heterojunction light-emitting diode (LED). The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The origins of the light emission for these LEDs annealed at various temperatures were studied using measurements of electrical property, photoluminescence, and Auger electron spectroscopy (AES) depth profiles. A blue-violet emission located at 430 nm was associated with intrinsic transitions between the bandgap of n -ZnO and p -GaN, the green-yellow emission at 550 nm mainly originating from the deep-level transitions of native defects in the n -ZnO and p -GaN surfaces, and the red emission at 610 nm emerging from the Ga-O interlayer due to interdiffusion at the n -ZnO/ p -GaN interface. The above-mentioned emissions also supported the EL spectra of LEDs annealed at 700 °C under air, nitrogen, and oxygen atmospheres, respectively.

White organic light-emitting diodes based on doped and ultrathin Rubrene layer

NASA Astrophysics Data System (ADS)

Li, Yi; Jiang, Yadong; Wen, Wen; Yu, Junsheng

2010-10-01

Based on a yellow fluorescent dye of 5, 6, 11, 12-tetraphenylnaphthacene (Rubrene), WOLEDs were fabricated, with doping structure and ultrathin layer structure utilized in the devices. By doping Rubrene into blue-emitting N,N'-bis-(1- naphthyl)-N,N'-biphenyl-1,1'-biphenyl-4,4'-diamine (NPB), the device with a structure of indium-tin-oxide (ITO)/NPB (40 nm)/NPB:Rubrene (0.25 wt%, 7 nm)/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) (30 nm)/Mg:Ag exhibited a warm white light with Commissions Internationale De L'Eclairage (CIE) coordinates of (0.38, 0.41) at 12 V. The electroluminescent spectrum of the OLED consisted of blue and yellow fluorescent emissions, the intensity of blue emission increased gradually relative to the orange emission with increasing voltage. This is mainly due to the recombination zone shifted towards the anode side as the transmission rate of electrons grows faster than that of holes under higher bias voltage. A maximum luminance of 7300 cd/m2 and a maximum power efficiency of 0.57 lm/W were achieved. Comparatively, by utilizing ultrathin dopant layer, the device with a structure of ITO/NPB (40 nm)/Rubrene (0.3 nm)/NPB (7 nm)/BCP (30 nm)/Mg:Ag achieved a low turn-on voltage of 3 V and a more stable white light. The peaks of EL spectra located at 430 and 560 nm corresponding to the CIE coordinates of (0.32, 0.32) under bias voltage ranging from 5 to 15 V. A maximum luminance of 5630 cd/m2 and a maximum power efficiency of 0.6 lm/W were achieved. The balanced spectra were attributed to the stable confining of charge carriers and exciton by the thin emitting layers. Hence, with simple device structure and fabricating process, the device with ultrathin layer achieved low turn-on voltage, stable white light emitting and higher power efficiency.

Effect of core quantum-dot size on power-conversion-efficiency for silicon solar-cells implementing energy-down-shift using CdSe/ZnS core/shell quantum dots.

PubMed

Baek, Seung-Wook; Shim, Jae-Hyoung; Seung, Hyun-Min; Lee, Gon-Sub; Hong, Jin-Pyo; Lee, Kwang-Sup; Park, Jea-Gun

2014-11-07

Silicon solar cells mainly absorb visible light, although the sun emits ultraviolet (UV), visible, and infrared light. Because the surface reflectance of a textured surface with SiNX film on a silicon solar cell in the UV wavelength region (250-450 nm) is higher than ∼27%, silicon solar-cells cannot effectively convert UV light into photo-voltaic power. We implemented the concept of energy-down-shift using CdSe/ZnS core/shell quantum-dots (QDs) on p-type silicon solar-cells to absorb more UV light. CdSe/ZnS core/shell QDs demonstrated clear evidence of energy-down-shift, which absorbed UV light and emitted green-light photoluminescence signals at a wavelength of 542 nm. The implementation of 0.2 wt% (8.8 nm QDs layer) green-light emitting CdSe/ZnS core/shell QDs reduced the surface reflectance of the textured surface with SiNX film on a silicon solar-cell from 27% to 15% and enhanced the external quantum efficiency (EQE) of silicon solar-cells to around 30% in the UV wavelength region, thereby enhancing the power conversion efficiency (PCE) for p-type silicon solar-cells by 5.5%.

Light-extraction enhancement of GaN-based 395  nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode.

PubMed

Xu, Jin; Zhang, Wei; Peng, Meng; Dai, Jiangnan; Chen, Changqing

2018-06-01

The distinct ultraviolet (UV) light absorption of indium tin oxide (ITO) limits the performance of GaN-based near-UV light-emitting diodes (LEDs). Herein, we report an Al-doped ITO with enhanced UV transmittance and low sheet resistance as the transparent conductive electrode for GaN-based 395 nm flip-chip near-UV LEDs. The thickness dependence of optical and electrical properties of Al-doped ITO films is investigated. The optimal Al-doped ITO film exhibited a transmittance of 93.2% at 395 nm and an average sheet resistance of 30.1  Ω/sq. Meanwhile, at an injection current of 300 mA, the forward voltage decreased from 3.14 to 3.11 V, and the light output power increased by 13% for the 395 nm near-UV flip-chip LEDs with the optimal Al-doped ITO over those with pure ITO. This Letter provides a simple and repeatable approach to further improve the light extraction efficiency of GaN-based near-UV LEDs.

InGaN/GaN dot-in-nanowire monolithic LEDs and lasers on (001) silicon

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Hazari, A.; Jahangir, S.

2017-02-01

GaN-based nanowire arrays have been grown on (001)Si substrate by plasma-assisted molecular beam epitaxy and their structural and optical properties have been determined. InxGa1-xN disks inserted in the nanowires behave as quantum dots with emission ranging from visible to near-infrared. We have exploited these nanowire heterostructure arrays to realize light-emitting diodes and diode lasers in which the quantum dots form the active light emitting media. The fabrication and characteristics of 630nm light-emitting diodes and 1.3μm edge-emitting diode lasers are described.

[Study on the movement of the carrier recombination region in organic light-emitting diodes (OLEDs) based on DPVBi/Alq3].

PubMed

Yan, Guang; Zhao, Su-ling; Xu, Zheng; Zhang, Fu-jun; Kong, Chao; Liu, Xiao-dong; Gong, Wei; Gao, Li-yan

2011-07-01

Series of organic light emitting devices with basic structure of ITO/PCBM: PVK(x Wt%, approximately 40 nm)/DPVBi(30 nm)/Alq3 (30 nm)/Al were fabricated in order to investigate the carrier recombination region movement in these devices. The carrier injection-dependent, the carrier transport-dependent and the voltage-dependent carrier recombination region movements were investigated respectively by modifying cathode with lithium fluoride, by changing the doping concentration of PCBM and by changing the voltage on the devices. The physical mechanism behind the voltage-dependent carrier recombination region movement was discussed.

Fabrication of White Organic Light Emitting Diode Using Two Types of Zn-Complexes as an Emitting Layer.

PubMed

Kim, Dong-Eun; Kwon, Young-Soo; Shin, Hoon-Kyu

2015-01-01

We have studied white OLED using two types of Zn-complexes as an emitting layer. We synthesized brand new two emissive materials, Zn(HPQ)2 as a yellow emitting material and Zn(HPB)2 as a blue emitting material. The Zn-complexes are low-molecular compounds and stable thermally. The fundamental structures of the fabricated OLED was ITO/NPB (40 nm)/Zn(HPB)2 (30 nm)/Zn(HPQ)2/LiF/Al. We varied the thickness of the Zn(HPQ)2 layer by 20, 30, and 40 nm. When the thickness of the Zn(HPQ)2 layer was 20 nm, the white emission was achieved. The maximum luminance was 12,000 cd/m2 at a current density of 800 mA/cm2. The CIE coordinates of the white emission were (0.319, 0.338) at an applied voltage of 10 V.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

PubMed

Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

A multispectral sorting device for wheat kernels

USDA-ARS?s Scientific Manuscript database

A low-cost multispectral sorting device was constructed using three visible and three near-infrared light-emitting diodes (LED) with peak emission wavelengths of 470 nm (blue), 527 nm (green), 624 nm (red), 850 nm, 940 nm, and 1070 nm. The multispectral data were collected by rapidly (~12 kHz) blin...

Effects of ultraviolet light emitting diodes (LEDs) on microbial and enzyme inactivation of apple juice.

PubMed

Akgün, Merve Pelvan; Ünlütürk, Sevcan

2017-11-02

In this study, the effects of Ultraviolet light-emitting diodes (UV-LEDs) on the inactivation of E. coli K12 (ATCC 25253), an indicator organism of E. coli O157:H7, and polyphneoloxidase (PPO) in cloudy apple juice (CAJ) were investigated. The clear (AJ) and cloudy apple juice were exposed to UV rays for 40min by using a UV device composed of four UV-LEDs with peak emissions at 254 and 280nm and coupled emissions as follows: 254/365, 254/405, 280/365, 280/405 and 254/280/365/405nm. UV-LEDs at 254nm achieved 1.6±0.1 log 10 CFU/mL inactivation of E. coli K12 at UV dose of 707.2mJ/cm 2 . The highest inactivation of E. coli K12 (2.0±0.1log 10 CFU/mL and 2.0±0.4log 10 CFU/mL) was achieved when the cloudy apple juice was treated with both 280nm and 280/365nm UV-LEDs. For clear apple juice the highest inactivation 4.4log 10 CFU/mL obtained for E. coli K12 was achieved using 4 lamps emitting light at 280nm for 40min exposure time. For the same treatment time, the experiments using a combination of lamps emitting light at 280 and 365nm (2lamp/2lamp) were resulted in 3.9±0.2log 10 CFU/mL reductions. UV-A and UV-C rays in combination showed a better inactivation effect on PPO than UV-C rays used separately. Residual activity of PPO in CAJ was reduced to 32.58% when treated with UV-LED in combination of UV-C (280nm) and UV-A (365nm) rays. Additionally, the total color change (ΔE) of CAJ subjected to combined UV-LED irradiation at 280/365nm was the lowest compared to other studied processing conditions. This study provides key implications for the future application of UV-LEDs to fruit juice pasteurization. Copyright © 2017 Elsevier B.V. All rights reserved.

Anatomical features of pepper plants (Capsicum annuum L.) grown under red light-emitting diodes supplemented with blue or far-red light

NASA Technical Reports Server (NTRS)

Schuerger, A. C.; Brown, C. S.; Stryjewski, E. C.

1997-01-01

Pepper plants (Capsicum annuum L. cv., Hungarian Wax) were grown under metal halide (MH) lamps or light-emitting diode (LED) arrays with different spectra to determine the effects of light quality on plant anatomy of leaves and stems. One LED (660) array supplied 90% red light at 660 nm (25nm band-width at half-peak height) and 1% far-red light between 700-800nm. A second LED (660/735) array supplied 83% red light at 660nm and 17% far-red light at 735nm (25nm band-width at half-peak height). A third LED (660/blue) array supplied 98% red light at 660nm, 1% blue light between 350-550nm, and 1% far-red light between 700-800nm. Control plants were grown under broad spectrum metal halide lamps. Plants were gron at a mean photon flux (300-800nm) of 330 micromol m-2 s-1 under a 12 h day-night photoperiod. Significant anatomical changes in stem and leaf morphologies were observed in plants grown under the LED arrays compared to plants grown under the broad-spectrum MH lamp. Cross-sectional areas of pepper stems, thickness of secondary xylem, numbers of intraxylary phloem bundles in the periphery of stem pith tissues, leaf thickness, numbers of choloplasts per palisade mesophyll cell, and thickness of palisade and spongy mesophyll tissues were greatest in peppers grown under MH lamps, intermediate in plants grown under the 660/blue LED array, and lowest in peppers grown under the 660 or 660/735 LED arrays. Most anatomical features of pepper stems and leaves were similar among plants grown under 660 or 660/735 LED arrays. The effects of spectral quality on anatomical changes in stem and leaf tissues of peppers generally correlate to the amount of blue light present in the primary light source.

Anatomical features of pepper plants (Capsicum annuum L.) grown under red light-emitting diodes supplemented with blue or far-red light.

PubMed

Schuerger, A C; Brown, C S; Stryjewski, E C

1997-03-01

Pepper plants (Capsicum annuum L. cv., Hungarian Wax) were grown under metal halide (MH) lamps or light-emitting diode (LED) arrays with different spectra to determine the effects of light quality on plant anatomy of leaves and stems. One LED (660) array supplied 90% red light at 660 nm (25nm band-width at half-peak height) and 1% far-red light between 700-800nm. A second LED (660/735) array supplied 83% red light at 660nm and 17% far-red light at 735nm (25nm band-width at half-peak height). A third LED (660/blue) array supplied 98% red light at 660nm, 1% blue light between 350-550nm, and 1% far-red light between 700-800nm. Control plants were grown under broad spectrum metal halide lamps. Plants were gron at a mean photon flux (300-800nm) of 330 micromol m-2 s-1 under a 12 h day-night photoperiod. Significant anatomical changes in stem and leaf morphologies were observed in plants grown under the LED arrays compared to plants grown under the broad-spectrum MH lamp. Cross-sectional areas of pepper stems, thickness of secondary xylem, numbers of intraxylary phloem bundles in the periphery of stem pith tissues, leaf thickness, numbers of choloplasts per palisade mesophyll cell, and thickness of palisade and spongy mesophyll tissues were greatest in peppers grown under MH lamps, intermediate in plants grown under the 660/blue LED array, and lowest in peppers grown under the 660 or 660/735 LED arrays. Most anatomical features of pepper stems and leaves were similar among plants grown under 660 or 660/735 LED arrays. The effects of spectral quality on anatomical changes in stem and leaf tissues of peppers generally correlate to the amount of blue light present in the primary light source.

Preparation and Luminescence Properties of Ca9NaZn(PO4)7:Dy3+ Single-Phase White Light-Emitting Phosphor

NASA Astrophysics Data System (ADS)

Zhu, Daoyun; Liao, Min; Mu, Zhongfei; Wu, Fugen

2018-05-01

Dy3+-doped Ca9NaZn(PO4)7 has been synthesized by high-temperature solid-state reaction. X-ray diffraction analysis revealed that the obtained phosphors existed as single phase. Doping with Dy3+ at low concentration had no obvious effect on the crystal structure of the host. Dy3+-doped samples showed strong emission at approximately 480 nm and 571 nm under excitation at 350 nm. The blue and yellow emissions showed almost the peak intensity. The combination of blue and yellow light formed white light. The color coordinates (0.323, 0.372) of the composite light are located in the white light region. The optimum doping concentration of Dy3+ ions was experimentally determined to be 10 mol.%. The concentration quenching mechanism was ascertained to be electric dipole-dipole interaction among Dy3+ ions. The obtained phosphors exhibited good thermal stability. These results indicate potential applications as single-phase white light-emitting phosphors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andreeva, E V; Il'ichenko, S N; Kostin, Yu O

Quantum-well superluminescent diodes (SLD) with extremely thin active (AlGa)As and (InGa)As layers and centre wavelengths about 810, 840, 860 and 880 nm are experimentally studied. Their emission spectrum possesses the shape close to Gaussian, its FWHM being 30 – 60 nm depending on the length of the active channel and the level of pumping. Under cw injection, the output power of light-emitting modules based on such SLDs can amount to 1.0 – 25 mW at the output of a single-mode fibre. It is demonstrated that the operation lifetime of these devices exceeds 30000 hours. Based on the light-emitting modules themore » prototypes of combined BroadLighter series light sources are implemented having a bell-shaped spectrum with the width up to 100 nm. (optical radiation sources)« less

Solution epitaxy of gallium-doped ZnO on p-GaN for heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Le, H. Q.; Lim, S. K.; Goh, G. K. L.; Chua, S. J.; Ang, N. S. S.; Liu, W.

2010-09-01

We report white light emission from a Ga-doped ZnO/p-GaN heterojunction light-emitting diode which was fabricated by growing gallium-doped ZnO film on the p-GaN in water at 90°C. As determined from Ga-doped ZnO films grown on (111) oriented MgAl2O4 spinel single crystal substrates, thermal treatment at 600°C in nitrogen ambient leads to a carrier concentration of 3.1×1020 cm-3 (and carrier mobility of 28 cm2/Vs) which is two orders of magnitude higher than that of the undoped films. Electroluminescence emissions at wavelengths of 393 nm (3.155 eV) and 529.5 nm (2.4 eV) were observed under forward bias in the heterojunction diode and white light could be visibly observed. The high concentration of electrons supplied from the Ga-doped ZnO films helped to enhance the carrier recombination and increase the light-emitting efficiency of the heterojunction diode.

High-power LEDs for plant cultivation

NASA Astrophysics Data System (ADS)

Tamulaitis, Gintautas; Duchovskis, Pavelas; Bliznikas, Zenius; Breive, Kestutis; Ulinskaite, Raimonda; Brazaityte, Ausra; Novickovas, Algirdas; Zukauskas, Arturas; Shur, Michael S.

2004-10-01

We report on high-power solid-state lighting facility for cultivation of greenhouse vegetables and on the results of the study of control of photosynthetic activity and growth morphology of radish and lettuce imposed by variation of the spectral composition of illumination. Experimental lighting modules (useful area of 0.22 m2) were designed based on 4 types of high-power light-emitting diodes (LEDs) with emission peaked in red at the wavelengths of 660 nm and 640 nm (predominantly absorbed by chlorophyll a and b for photosynthesis, respectively), in blue at 455 nm (phototropic function), and in far-red at 735 nm (important for photomorphology). Morphological characteristics, chlorophyll and phytohormone concentrations in radish and lettuce grown in phytotron chambers under lighting with different spectral composition of the LED-based illuminator and under illumination by high pressure sodium lamps with an equivalent photosynthetic photon flux density were compared. A well-balanced solid-state lighting was found to enhance production of green mass and to ensure healthy morphogenesis of plants compared to those grown using conventional lighting. We observed that the plant morphology and concentrations of morphologically active phytohormones is strongly affected by the spectral composition of light in the red region. Commercial application of the LED-based illumination for large-scale plant cultivation is discussed. This technology is favorable from the point of view of energy consumption, controllable growth, and food safety but is hindered by high cost of the LEDs. Large scale manufacturing of high-power red AlInGaP-based LEDs emitting at 650 nm and a further decrease of the photon price for the LEDs emitting in the vicinity of the absorption peak of chlorophylls have to be achieved to promote horticulture applications.

Highly ultraviolet transparent textured indium tin oxide thin films and the application in light emitting diodes

NASA Astrophysics Data System (ADS)

Chen, Zimin; Zhuo, Yi; Tu, Wenbin; Ma, Xuejin; Pei, Yanli; Wang, Chengxin; Wang, Gang

2017-06-01

Various kinds of materials have been developed as transparent conductors for applications in semiconductor optoelectronic devices. However, there is a bottleneck that transparent conductive materials lose their transparency at ultraviolet (UV) wavelengths and could not meet the demands for commercial UV device applications. In this work, textured indium tin oxide (ITO) is grown and its potential to be used at UV wavelengths is explored. It is observed that the pronounced Burstein-Moss effect could widen the optical bandgap of the textured ITO to 4.7 eV. The average transmittance in UVA (315 nm-400 nm) and UVB (280 nm-315 nm) ranges is as high as 94% and 74%, respectively. The excellent optical property of textured ITO is attributed to its unique structural property. The compatibility of textured ITO thin films to the device fabrication is demonstrated on 368-nm nitride-based light emitting diodes, and the enhancement of light output power by 14.8% is observed compared to sputtered ITO.

Microgravity

NASA Image and Video Library

2004-04-15

Astroculture is a suite of technologies used to produce and maintain a closed controlled environment for plant growth. The two most recent missions supported growth of potato, dwarf wheat, and mustard plants and provided scientists with the first opportunity to conduct true plant research in space. Light emitting diodes have particular usefulness for plant growth lighting because they emit a much smaller amount of radiant heat than do conventional lighting sources and because they have potential of directing a higher percentage of the emitted light onto plants surfaces. Furthermore, the high output LED's have emissions in the 600-700 nm waveband, which is of highest efficiency for photosynthesis by plants.

Microgravity

NASA Image and Video Library

2004-04-15

Astroculture is a suite of technologies used to produce and maintain a closed controlled environment for plant growth. The two most recent missions supported growth of potato, dwarf wheat, and mustard plants, and provided scientists with the first opportunity to conduct true plant research in space. Light emitting diodes have particular usefulness for plant growth lighting because they emit a much smaller amount of radiant heat than do conventional lighting sources and because they have potential of directing a higher percentage of the emitted light onto plants surfaces. Furthermore, the high output LED's have emissions in the 600-700 nm waveband, which is of highest efficiency for photosynthesis by plants.

Improved performances of organic light-emitting diodes with mixed layer and metal oxide as anode buffer

NASA Astrophysics Data System (ADS)

Xue, Qin; Liu, Shouyin; Zhang, Shiming; Chen, Ping; Zhao, Yi; Liu, Shiyong

2013-01-01

We fabricated organic light-emitting devices (OLEDs) employing 2-methyl-9,10-di(2-naphthyl)-anthracene (MADN) as hole-transport material (HTM) instead of commonly used N,N'-bis-(1-naphthyl)-N,N'-diphenyl,1,1'-biphenyl-4,4'-diamine (NPB). After inserting a 0.9 nm thick molybdenum oxide (MoOx) layer at the indium tin oxide (ITO)/MADN interface and a 5 nm thick mixed layer at the organic/organic heterojunction interface, the power conversion efficiency of the device can be increased by 4-fold.

Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography

PubMed Central

Jiang, Shengxiang; Feng, Yulong; Chen, Zhizhong; Zhang, Lisheng; Jiang, Xianzhe; Jiao, Qianqian; Li, Junze; Chen, Yifan; Li, Dongsan; Liu, Lijian; Yu, Tongjun; Shen, Bo; Zhang, Guoyi

2016-01-01

An anodic aluminum oxide (AAO) patterned sapphire substrate, with the lattice constant of 520 ± 40 nm, pore dimension of 375 ± 50 nm, and height of 450 ± 25 nm was firstly used as a nanoimprint lithography (NIL) stamp and imprinted onto the surface of the green light-emitting diode (LED). A significant light extraction efficiency (LEE) was improved by 116% in comparison to that of the planar LED. A uniform broad protrusion in the central area and some sharp lobes were also obtained in the angular resolution photoluminescence (ARPL) for the AAO patterned LED. The mechanism of the enhancement was correlated to the fluctuations of the lattice constant and domain orientation of the AAO-pattern, which enabled the extraction of more guided modes from the LED device. PMID:26902178

Simulation of mixed-host emitting layer based organic light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Riku, C.; Kee, Y. Y.; Ong, T. S.

2015-04-24

‘SimOLED’ simulator is used in this work to investigate the efficiency of the mixed-host organic light emitting devices (MH-OLEDs). Tris-(8-hydroxyquinoline) aluminum(3) (Alq{sub 3}) and N,N-diphenyl-N,N-Bis(3-methylphenyl)-1,1-diphenyl-4,4-diamine (TPD) are used as the electron transport layer (ETL) material and hole transport layer (HTL) material respectively, and the indium-doped tin oxide (ITO) and aluminum (Al) as anode and cathode. Three MH-OLEDs, A, B and C with the same structure of ITO / HTM (15 nm) / Mixed host (70 nm) / ETM (10 nm) /Al, are stimulated with ratios TPD:Alq{sub 3} of 3:5, 5:5, and 5:3 respectively. The Poole-Frenkel model for electron and hole mobilities is employedmore » to compute the current density-applied voltage-luminance characteristics, distribution of the electric field, carrier concentrations and recombination rate.« less

Spectral broadening in electroluminescence of white organic light-emitting diodes based on complementary colors

NASA Astrophysics Data System (ADS)

Kim, Young Min; Park, Young Wook; Choi, Jin Hwan; Ju, Byeong Kwon; Jung, Jae Hoon; Kim, Jai Kyeong

2007-01-01

The authors report the optical and electroluminescent (EL) properties of white organic light-emitting diodes (OLEDs) which have two emitters with similar structures: 1, 1, 4, 4-tetraphenyl-1, 3-butadiene and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline have an emission peak of 400nm around the near ultraviolet, and tris-(8-hydroxyquinoline) aluminum doped with 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran has an emission peak of 580nm producing a yellow color. The EL spectra of the white OLED have shown a broadening through visual range from 400to780nm. This spectral broadening is related to an exciplex emission at the organic solid interface.

Colored lenses suppress blue light-emitting diode light-induced damage in photoreceptor-derived cells.

PubMed

Hiromoto, Kaho; Kuse, Yoshiki; Tsuruma, Kazuhiro; Tadokoro, Nobuyuki; Kaneko, Nobuyuki; Shimazawa, Masamitsu; Hara, Hideaki

2016-03-01

Blue light-emitting diodes (LEDs) in liquid crystal displays emit high levels of blue light, exposure to which is harmful to the retina. Here, we investigated the protective effects of colored lenses in blue LED light-induced damage to 661W photoreceptor-derived cells. We used eight kinds of colored lenses and one lens that reflects blue light. Moreover, we evaluated the relationship between the protective effects of the lens and the transmittance of lens at 464 nm. Lenses of six colors, except for the SY, PN, and reflective coating lenses, strongly decreased the reduction in cell damage induced by blue LED light exposure. The deep yellow lens showed the most protective effect from all the lenses, but the reflective coating lens and pink lens did not show any effects on photoreceptor-derived cell damage. Moreover, these results were correlated with the lens transmittance of blue LED light (464 nm). These results suggest that lenses of various colors, especially deep yellow lenses, may protect retinal photoreceptor cells from blue LED light in proportion to the transmittance for the wavelength of blue LED and the suppression of reactive oxygen species production and cell damage.

Synthesis and electroluminescence property of new hexaphenylbenzene derivatives including amine group for blue emitters

PubMed Central

2013-01-01

Three new blue-emitting compounds of 5P-VA, 5P-VTPA, and 5P-DVTPA for organic light-emitting diode (OLED) based on hexaphenylbenzene moiety were demonstrated. Physical properties by the change of the substitution groups of the synthesized materials were systematically examined. Photoluminescence spectrum of the synthesized materials showed maximum emitting wavelengths of about 400 to 447 nm in solution state and 451 to 461 nm in film state, indicating deep blue emission color. OLED devices were fabricated by the synthesized compounds using vacuum deposit process as an emitting layer. The device structure was ITO/2-TNATA 60 nm/ NPB 15 nm/ EML 35 nm/ TPBi 20 nm/ LiF 1 nm/ Al 200 nm. External quantum efficiencies and CIE values of 5P-VA, 5P-VTPA, and 5P-DVTPA were 1.89%, 3.59%, 3.34%, and (0.154, 0.196), (0.150, 0.076), (0.148, 0.120), respectively. 5P-VTPA and 5P-DVTPA exhibited superior highly blue quality and thermal property such as high Td of 448°C and 449°C. PMID:24134333

White- and blue-light-emitting dysprosium(III) and terbium(III)-doped gadolinium titanate phosphors.

PubMed

Antić, Ž; Kuzman, S; Đorđević, V; Dramićanin, M D; Thundat, T

2017-06-01

Here we report the synthesis and structural, morphological, and photoluminescence analysis of white- and blue-light-emitting Dy 3 + - and Tm 3 + -doped Gd 2 Ti 2 O 7 nanophosphors. Single-phase cubic Gd 2 Ti 2 O 7 nanopowders consist of compact, dense aggregates of nanoparticles with an average size of ~25 nm for Dy 3 + -doped and ~50 nm for Tm 3 + -doped samples. The photoluminescence results indicated that ultraviolet (UV) light excitation of the Dy 3 + -doped sample resulted in direct generation of white light, while a dominant yellow emission was obtained under blue-light excitation. Intense blue light was obtained for Tm 3 + -doped Gd 2 Ti 2 O 7 under UV excitation suggesting that this material could be used as a blue phosphor. Copyright © 2016 John Wiley & Sons, Ltd.

Intrinsic Polarization and Tunable Color of Electroluminescence from Organic Single Crystal-based Light-Emitting Devices

PubMed Central

Ding, Ran; Feng, Jing; Zhou, Wei; Zhang, Xu-Lin; Fang, Hong-Hua; Yang, Tong; Wang, Hai-Yu; Hotta, Shu; Sun, Hong-Bo

2015-01-01

A single crystal-based organic light-emitting device (OLED) with intrinsically polarized and color-tunable electroluminescence (EL) has been demonstrated without any subsequent treatment. The polarization ratio of 5:1 for the transversal-electric (TE) and transversal-magnetic (TM) polarization at the emission peak of 575 nm, and 4.7:1 for the TM to TE polarization at the emission peak of 635 nm, respectively, have been obtained. The emitting color is tunable between yellow, yellow-green and orange by changing the polarization angle. The polarized EL and the polarization-induced color tunability can be attributed to the anisotropic microcavity formed by the BP3T crystal with uniaxial alignment of the molecules. PMID:26207723

Device characteristics of organic light-emitting diodes based on electronic structure of the Ba-doped Alq3 layer.

PubMed

Lim, Jong Tae; Kim, Kyung Nam; Yeom, Geun Young

2009-12-01

Organic light-emitting diodes (OLEDs) with a Ba-doped tris(8-quinolinolato)aluminum(III) (Alq3) layer were fabricated to reduce the barrier height for electron injection and to improve the electron conductivity. In the OLED consisting of glass/ITO/4,4',4"-tris[2-naphthylphenyl-1-phenylamino]triphenylamine (2-TNATA, 30 nm)/4,4'-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (NPB, 18 nm)/Alq3 (42 nm)/Ba-doped Alq3 (20 nm, x%: x = 0, 10, 25, and 50)/Al (100 nm), the device with the Alq3 layer doped with 10% Ba showed the highest light out-coupling characteristic. However, as the Ba dopant concentration was increased from 25% to 50%, this device characteristic was largely reduced. The characteristics of these devices were interpreted on the basis of the chemical reaction between Ba and Alq3 and the electron injection property by analyzing the electronic structure of the Ba-doped Alq3 layer. At a low Ba doping of 10%, mainly the Alq3 radical anion species was formed. In addition, the barrier height for electron injection in this layer was decreased to 0.6 eV, when compared to the pristine Alq3 layer. At a high Ba doping of 50%, the Alq3 molecules were severely decomposed. When the Ba dopant concentration was changed, the light-emitting characteristics of the devices were well coincided with the formation mechanism of Alq3 radical anion and Alq3 decomposition species.

Luminescence properties of Ca{sub 14}Mg{sub 2}(SiO{sub 4}){sub 8}:Eu{sup 2+} from various Eu{sup 2+} sites for white-light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jia, E-mail: zhangjia@hytc.edu.cn; Jiang, Cheng

2014-12-15

Ca{sub 14}Mg{sub 2}(SiO{sub 4}){sub 8}:Eu{sup 2+} phosphors were synthesized by solid-state reaction method, and their luminescence properties were investigated. In the emission spectra, several overlapping emission bands originating from various Eu{sup 2+} sites were found. Eu{sup 2+} in Ca{sub 14}Mg{sub 2}(SiO{sub 4}){sub 8} exhibits green emission around 506 nm, and the sample doped with 0.1 mol% Eu{sup 2+} shows the strongest brightness under 365 nm excitation with the quantum efficiency of 63.6%. In the excitation spectra, strong and broad excitation bands from 250 to 450 nm were observed, which could well match with the emission wavelength of the light-emitting diodemore » chip. The fabrication test on the InGaN chip indicates the Ca{sub 14}Mg{sub 2}(SiO{sub 4}){sub 8}:Eu{sup 2+} phosphor could be promising candidate for white light-emitting diodes.« less

Red light emitting nano-PVP fibers that hybrid with Ag@SiO2@Eu(tta)3phen-NPs by electrostatic spinning method

NASA Astrophysics Data System (ADS)

Zhang, Xiaolin; Tang, Jianguo; Li, Haidong; Wang, Yao; Wang, Xinzhi; Wang, Yanxin; Huang, Linjun; Belfiore, Laurence A.

2018-04-01

This work demonstrated red light emitting nano-PVP fibers that incorporated with novel three-layer nanostructure of Ag@SiO2@Eu(tta)3phen nanoparticles (Ag@SiO2@Eu(tta)3phen-NPs), and the hybrid nano-PVP fibers were fabricated via a remarkably simple electrostatic spinning method. For Ag@SiO2@Eu(tta)3phen-NPs, the thickness of SiO2 is optimized to obtain the maximum luminescent intensity, as results, the optimized thickness of SiO2 is 20 nm. And the corresponding luminescent intensity (612 nm) of the Ag@SiO2@Eu(tta)3phen-NPs is enhanced up to 10 times compared with the pure Eu(tta)3phen complex, which indicates that with 20 nm SiO2 thickness, the localized surface plasmon resonance (LSPR) effect of Ag@SiO2 exhibits highest performance for enhancing luminescence. Moreover, the luminescent PVP fibers emit bright red light under the fluorescence microscope, which definitely confirms that the microenvironment provided by PVP polymer is absolutely suitable for the fluorescent composites.

Filter-based measurements of UV-vis mass absorption cross sections of organic carbon aerosol from residential biomass combustion: Preliminary findings and sources of uncertainty

NASA Astrophysics Data System (ADS)

Pandey, Apoorva; Pervez, Shamsh; Chakrabarty, Rajan K.

2016-10-01

Combustion of solid biomass fuels is a major source of household energy in developing nations. Black (BC) and organic carbon (OC) aerosols are the major PM2.5 (particulate matter with aerodynamic diameter smaller than 2.5 μm) pollutants co-emitted during burning of these fuels. While the optical nature of BC is well characterized, very little is known about the properties of light-absorbing OC (LAOC). Here, we report our preliminary findings on the mass-based optical properties of LAOC emitted from the combustion of four commonly used solid biomass fuels - fuel-wood, agricultural residue, dung-cake, and mixed - in traditional Indian cookstoves. As part of a pilot field study conducted in central India, PM2.5 samples were collected on Teflon filters and analyzed for their absorbance spectra in the 300-900 nm wavelengths at 1 nm resolution using a UV-Visible spectrophotometer equipped with an integrating sphere. The mean mass absorption cross-sections (MAC) of the emitted PM2.5 and OC, at 550 nm, were 0.8 and 0.2 m2 g-1, respectively, each with a factor of ~2.3 uncertainty. The mean absorption Ångström exponent (AǺE) values for PM2.5 were 3±1 between 350 and 550 nm, and 1.2±0.1 between 550 and 880 nm. In the 350-550 nm range, OC had an AǺE of 6.3±1.8. The emitted OC mass, which was on average 25 times of the BC mass, contributed over 50% of the aerosol absorbance at wavelengths smaller than 450 nm. The overall OC contribution to visible solar light (300-900 nm) absorption by the emitted particles was 26-45%. Our results highlight the need to comprehensively and accurately address: (i) the climatic impacts of light absorption by OC from cookstove emissions, and (ii) the uncertainties and biases associated with variability in biomass fuel types and combustion conditions, and filter-based measurement artifacts during determination of MAC values.

Luminescent carbon quantum dots with high quantum yield as a single white converter for white light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, X. T.; Zhang, Y.; Liu, X. G., E-mail: liuxuguang@tyut.edu.cn

Carbon quantum dots (CQDs) with high quantum yield (51.4%) were synthesized by a one-step hydrothermal method using thiosalicylic acid and ethylenediamine as precursor. The CQDs have the average diameter of 2.3 nm and possess excitation-independent emission wavelength in the range from 320 to 440 nm excitation. Under an ultraviolet (UV) excitation, the CQDs aqueous solutions emit bright blue fluorescence directly and exhibit broad emission with a high spectral component ratio of 67.4% (blue to red intensity to total intensity). We applied the CQDs as a single white-light converter for white light emitting diodes (WLEDs) using a UV-LED chip as the excitation lightmore » source. The resulted WLED shows superior performance with corresponding color temperature of 5227 K and the color coordinates of (0.34, 0.38) belonging to the white gamut.« less

Tunable blue organic light emitting diode based on aluminum calixarene supramolecular complex

NASA Astrophysics Data System (ADS)

Legnani, C.; Reyes, R.; Cremona, M.; Bagatin, I. A.; Toma, H. E.

2004-07-01

In this letter, the results of supramolecular organic light emitting diodes using a calix[4] arene complex thin film as emitter and electron transporting layer are presented. The devices were grown onto glass substrates coated with indium-tin-oxide layer and aluminum thick (150nm) cathode. By applying a dc voltage between the device electrodes in forward bias condition, a blue light emission in the active area of the device was observed. It was found that the electroluminescent emission peak can be tuned between 470 and 510nm changing the applied voltage bias from 4.3 to 5.4V. The observed tunable emission can be associated with an energy transfer from the calixarene compound.

Improved hole-injection and power efficiency of organic light-emitting diodes using an ultrathin cerium fluoride buffer layer

NASA Astrophysics Data System (ADS)

Lu, Hsin-Wei; Kao, Po-Ching; Chu, Sheng-Yuan

2016-09-01

In this study, the efficiency of organic light-emitting diodes (OLEDs) was enhanced by depositing a CeF3 film as an ultra-thin buffer layer between the ITO and NPB hole transport layer, with the structure configuration ITO/CeF3 (1 nm)/NPB (40 nm)/Alq3 (60 nm)/LiF (1 nm)/Al (150 nm). The enhancement mechanism was systematically investigated via several approaches. The work function increased from 4.8 eV (standard ITO electrode) to 5.2 eV (1-nm-thick UV-ozone treated CeF3 film deposited on the ITO electrode). The turn-on voltage decreased from 4.2 V to 4.0 V at 1 mA/cm2, the luminance increased from 7588 cd/m2 to 10820 cd/m2, and the current efficiency increased from 3.2 cd/A to 3.5 cd/A when the 1-nm-thick UV-ozone treated CeF3 film was inserted into the OLEDs.

Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates.

PubMed

Seo, Yong Gon; Baik, Kwang Hyeon; Song, Hooyoung; Son, Ji-Su; Oh, Kyunghwan; Hwang, Sung-Min

2011-07-04

We report on orange a-plane light-emitting diodes (LEDs) with InGaN single quantum well (SQW) grown on r-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). The peak wavelength and the full-width at half maximum (FWHM) at a drive current of 20mA were 612.2 nm and 72 nm, respectively. The device demonstrated a blue shift in emission wavelength from 614.6 nm at 10 mA to 607.5 nm at 100 mA, representing a net shift of 7.1 nm over a 90 mA range, which is the longest wavelength compared with reported values in nonpolar LEDs. The polarization ratio values obtained from the orange LED varied between 0.36 and 0.44 from 10 to 100mA and a weak dependence of the polarization ratio on the injection current was observed.

Potatoes in Space

NASA Technical Reports Server (NTRS)

2004-01-01

Astroculture is a suite of technologies used to produce and maintain a closed controlled environment for plant growth. The two most recent missions supported growth of potato, dwarf wheat, and mustard plants and provided scientists with the first opportunity to conduct true plant research in space. Light emitting diodes have particular usefulness for plant growth lighting because they emit a much smaller amount of radiant heat than do conventional lighting sources and because they have potential of directing a higher percentage of the emitted light onto plants surfaces. Furthermore, the high output LED's have emissions in the 600-700 nm waveband, which is of highest efficiency for photosynthesis by plants.

Patterned mist deposition of tri-colour CdSe/ZnS quantum dot films toward RGB LED devices

NASA Astrophysics Data System (ADS)

Pickering, S.; Kshirsagar, A.; Ruzyllo, J.; Xu, J.

2012-06-01

In this experiment a technique of mist deposition was explored as a way to form patterned ultra-thin-films of CdSe/ZnS core/shell nanocrystalline quantum dots using colloidal solutions. The objective of this study was to investigate the feasibility of mist deposition as a patterning method for creating multicolour quantum dot light emitting diodes. Mist deposition was used to create three rows of quantum dot light emitting diodes on a single device with each row having a separate colour. The colours chosen were red, green and yellow with corresponding peak wavelengths of 620 nm, 558 nm, and 587 nm. The results obtained from this experiment show that it is possible to create multicolour devices on a single substrate. The peak brightnesses obtained in this experiment for the red, green, and yellow were 508 cd/m, 507 cd/m, and 665 cd/m, respectively. The similar LED brightness is important in display technologies using colloidal quantum dots in a precursor solution to ensure one colour does not dominate the emitted spectrum. Results obtained in-terms of brightness were superior to those achieved with inkjet deposition. This study has shown that mist deposition is a viable method for patterned deposition applied to quantum dot light emitting diode display technologies.

Photobiomodulation of freshly isolated human adipose tissue-derived stromal vascular fraction cells by pulsed light-emitting diodes for direct clinical application.

PubMed

Priglinger, E; Maier, J; Chaudary, S; Lindner, C; Wurzer, C; Rieger, S; Redl, H; Wolbank, S; Dungel, P

2018-06-01

A highly interesting source for adult stem cells is adipose tissue, from which the stromal vascular fraction (SVF)-a heterogeneous cell population including the adipose-derived stromal/stem cells-can be obtained. To enhance the regenerative potential of freshly isolated SVF cells, low-level light therapy (LLLT) was used. The effects of pulsed blue (475 nm), green (516 nm), and red (635 nm) light from light-emitting diodes applied on freshly isolated SVF were analysed regarding cell phenotype, cell number, viability, adenosine triphosphate content, cytotoxicity, and proliferation but also osteogenic, adipogenic, and proangiogenic differentiation potential. The colony-forming unit fibroblast assay revealed a significantly increased colony size after LLLT with red light compared with untreated cells, whereas the frequency of colony-forming cells was not affected. LLLT with green and red light resulted in a stronger capacity to form vascular tubes by SVF when cultured within 3D fibrin matrices compared with untreated cells, which was corroborated by increased number and length of the single tubes and a significantly higher concentration of vascular endothelial growth factor. Our study showed beneficial effects after LLLT on the vascularization potential and proliferation capacity of SVF cells. Therefore, LLLT using pulsed light-emitting diode light might represent a new approach for activation of freshly isolated SVF cells for direct clinical application. Copyright © 2018 John Wiley & Sons, Ltd.

Dimmable sunlight-like organic light emitting diodes with ultra-high color rendering index

NASA Astrophysics Data System (ADS)

Wu, Jin-Han; Chi, Chien-An; Chiang, Chang-Lin; Chen, Guan-Yu; Lin, Yi-Ping; Chen, Cheng-Chang; Ho, Shu-Yi; Chen, Shih-Pu; Li, Jung-Yu

2016-05-01

We propose novel dimmable sunlight-like white organic light-emitting diodes that were fabricated using three luminophores to form an emitting spectrum similar to black body radiation at 2250 K with ultra-high color rendering index (CRI) value of 91, which nearly remained the constant at various luminance values ranging from 100 to more than 2500 cd/m2 at Commission Internationale de l'Eclairage chromaticity coordinates of (0.51, 0.41). Introducing charge modification layers suppressed the energy transfer between the emitting material layers and increased the probability of carrier recombination. Moreover, we reveal that covering long-wavelength ranges played a vital role in achieving high CRI values; the CRI values of a spectrum artificially shifted toward a long-wavelength direction (from 610 to 620 nm) remained constant, whereas those of a spectrum shifted toward a short-wavelength direction (from 610 to 600 nm) dropped to 79.

Highly Efficient White Organic Light Emitting Diodes Using New Blue Fluorescence Emitter.

PubMed

Kim, Seungho; Kim, Beomjin; Lee, Jaehyun; Yu, Young-Jun; Park, Jongwook

2015-07-01

Two different emitting compounds, 1-[1,1';3',1"]Terphenyl-5'-yl-6-(10-[1,1';3',1"]terpheny-5'-yl- anthracen-9-yl)-pyrene (TP-AP-TP) and Poly-phenylene vinylene derivative (PDY 132) were used to white OLED device. By incorporating adjacent blue and yellow emitting layers in a multi-layered structure, highly efficient white emission has been attained. The device was fabricated with a hybrid configuration structure: ITO/PEDOT (40 nm)/PDY-132 (8-50 nm)/ NPB (10 nm)/TP-AP-TP (30 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (200 nm). After fixing TP-AP-TP thickness of 30 nm by evaporation, PDY-132 thickness varied with 8, 15, 35, and 50 nm by spin coating in device. The luminance efficiency of the white devices at 10 mA/cm2 were 2.93 cd/A-6.55 cd/A. One of white devices showed 6.55 cd/A and white color of (0.290, 0.331).

Organic Fluorescent Dyes Supported on Activated Boron Nitride: A Promising Blue Light Excited Phosphors for High-Performance White Light-Emitting Diodes

PubMed Central

Li, Jie; Lin, Jing; Huang, Yang; Xu, Xuewen; Liu, Zhenya; Xue, Yanming; Ding, Xiaoxia; Luo, Han; Jin, Peng; Zhang, Jun; Zou, Jin; Tang, Chengchun

2015-01-01

We report an effective and rare-earth free light conversion material synthesized via a facile fabrication route, in which organic fluorescent dyes, i.e. Rhodamine B (RhB) and fluorescein isothiocyanate (FITC) are embedded into activated boron nitride (αBN) to form a composite phosphor. The composite phosphor shows highly efficient Förster resonance energy transfer and greatly improved thermal stability, and can emit at broad visible wavelengths of 500–650 nm under the 466 nm blue-light excitation. By packaging of the composite phosphors and a blue light-emitting diode (LED) chip with transparent epoxy resin, white LED with excellent thermal conductivity, current stability and optical performance can be realized, i.e. a thermal conductivity of 0.36 W/mk, a Commission Internationale de 1'Eclairage color coordinates of (0.32, 0.34), and a luminous efficiency of 21.6 lm·W−1. Our research opens the door toward to the practical long-life organic fluorescent dyes-based white LEDs. PMID:25682730

Surface photonic crystal structures for LED emission modification

NASA Astrophysics Data System (ADS)

Uherek, Frantisek; Škriniarová, Jaroslava; Kuzma, Anton; Šušlik, Łuboš; Lettrichova, Ivana; Wang, Dong; Schaaf, Peter

2017-12-01

Application of photonic crystal structures (PhC) can be attractive for overall and local enhancement of light from patterned areas of the light emitting diode (LED) surface. We used interference and near-field scanning optical microscope lithography for patterning of the surface of GaAs/AlGaAs based LEDs emitted at 840 nm. Also new approach with patterned polydimethylsiloxane (PDMS) membrane applied directly on the surface of red emitting LED was investigated. The overall emission properties of prepared LED with patterned structure show enhanced light extraction efficiency, what was documented from near- and far-field measurements.

282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

NASA Astrophysics Data System (ADS)

Dong, Peng; Yan, Jianchang; Wang, Junxi; Zhang, Yun; Geng, Chong; Wei, Tongbo; Cong, Peipei; Zhang, Yiyun; Zeng, Jianping; Tian, Yingdong; Sun, Lili; Yan, Qingfeng; Li, Jinmin; Fan, Shunfei; Qin, Zhixin

2013-06-01

We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The AlN coalescence thickness on NPSS is only 3 μm due to AlN's nano-scaled lateral growth, which also leads to low dislocation densities in AlN and epi-layers above. On NPSS, the light-output power of a 282-nm UV-LED reaches 3.03 mW at 20 mA with external quantum efficiency of 3.45%, exhibiting 98% better performance than that on flat sapphire. Temperature-dependent photoluminescence reveals this significant enhancement to be a combination of higher internal quantum efficiency and higher light extraction efficiency.

Dual-Wavelength InGaAsSb/AlGaAsSb Quantum-Well Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Nguyen, Tien Dai; Hwang, Jehwan; Kim, Yeongho; Kim, Eui-Tae; Kim, Jun Oh; Lee, Sang Jun

2018-05-01

We have investigated the structural characteristics and the device performance of three-stack InGaAsSb/AlGaAsSb quantum-well (QW) light-emitting diodes (LEDs) grown by using molecular beam epitaxy. The QW LED structure with an 8-nm well thickness had a single peak emission wavelength of 2.06 μm at an injection current of 0.3 A at room temperature. However, the QWLEDs with three different well thicknesses of 5-, 10-, and 15-nm had double peak emission wavelengths of 1.97 and 2.1 μm at an injection current of 1.1 A, which were associated with the radiative recombination in the QW with a 5-nm well thickness and the overlapped emission from the QWs with 10- and 15-nm well thicknesses, respectively.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Peican; Zhou, Liya, E-mail: zhouliyatf@163.com; Mo, Fuwang

Graphical abstract: - Highlights: • Novel Eu{sup 2+} doped Sr{sub 6}Ca{sub 4}(PO{sub 4}){sub 6}F{sub 2} phosphors was synthesized for the first time. • The Sr{sub 6}Ca{sub 4}(PO{sub 4}){sub 6}F{sub 2}:Eu{sup 2+} phosphors produced blue light when irradiated at 368 nm. • The emission band of the sample could be decomposed into two Gaussian profiles. - Abstract: For the first time, a series of novel blue light-emitting phosphors Sr{sub 6}Ca{sub 4}(PO{sub 4}){sub 6}F{sub 2}:Eu{sup 2+} were synthesized by a traditional solid-state reaction. The phosphors exhibited a broad and intense excitation band that could be pumped by near ultraviolet to exhibit amore » broad photoluminescence band ranging from 400 nm to 530 nm peaking at 452 nm. Quenching concentration was 0.05 mol. Furthermore, the mechanism of concentration quenching involving SCPF:Eu{sup 2+} was demonstrated to be a dipole–dipole interaction with critical distance of 27.95 Å. Decay time curves were also measured to validate energy transfer, and quantum efficiency is investigated. The chromaticity diagram of Commission Internationale de l’Eclairage indicated that SCPF:Eu{sup 2+} may be used as a blue-emitting component for white light-emitting diode applications.« less

Insertion of two-dimensional photonic crystal pattern on p-GaN layer of GaN-based light-emitting diodes using bi-layer nanoimprint lithography.

PubMed

Byeon, Kyeong-Jae; Hwang, Seon-Yong; Hong, Chang-Hee; Baek, Jong Hyeob; Lee, Heon

2008-10-01

Nanoimprint lithography (NIL) was adapted to fabricate two-dimensional (2-D) photonic crystal (PC) pattern on the p-GaN layer of InGaN/GaN multi quantum well light-emitting diodes (LEDs) structure to improve the light extraction efficiency. For the uniform transfer of the PC pattern, a bi-layer imprinting method with liquid phase resin was used. The p-GaN layer was patterned with a periodic array of holes by an inductively coupled plasma etching process, based on SiCl4/Ar plasmas. As a result, 2-D photonic crystal patterns with 144 nm, 200 nm and 347 nm diameter holes were uniformly formed on the p-GaN layer and the photoluminescence (PL) intensity of each patterned LED samples was increased by more than 2.6 times, as compared to that of the un-patterned LED sample.

Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer

NASA Astrophysics Data System (ADS)

Cheng, Chuan-Hui; Zhang, Bi-Long; Sun, Chao; Li, Ruo-Xuan; Wang, Yuan; Tian, Wen-Ming; Zhao, Chun-Yi; Jin, Sheng-Ye; Liu, Wei-Feng; Luo, Ying-Min; Du, Guo-Tong; Cong, Shu-Lin

2017-06-01

A highly efficient inverted organic light emitting diode using 1.0 nm-thick ZnIx as a hole-blocking layer is developed. We fabricate devices with the configuration ITO/ZnIx (1.0 nm)/Alq3 (50 nm)/NPB (50 nm)/MoO3 (6.0 nm)/Al (100 nm). The deposition of a ZnIx layer increases the maximum luminance by two orders of magnitude from 13.4 to 3566.1 cd/m2. In addition, the maximum current efficiency and power efficiency are increased by three orders of magnitude, and the turn-on voltage to reach 1 cd/m2 decreases from 13 to 8 V. The results suggest that the electron injection efficiency is not improved by introducing a ZnIx layer. Instead, the improved device performance originates from the strong hole-blocking ability of ZnIx. This work indicates that layered materials may lead to novel applications in optoelectronic devices.

Estimation of carrier leakage in InGaN light emitting diodes from photocurrent measurements

NASA Astrophysics Data System (ADS)

Hafiz, Shopan; Zhang, Fan; Monavarian, Morteza; Okur, Serdal; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit

2014-02-01

Carrier transport in double heterostructure (DH) InGaN light emitting diodes (LEDs) was investigated using photocurrent measurements performed under CW HeCd laser (325 nm wavelength) excitation. The effect of electron injector thicknesses was investigated by monitoring the excitation density and applied bias dependent escape of photogenerated carriers from the active region and through energy band structure and carrier transport simulations using Silvaco Atlas. For quad (4x) 3-nm DH LED structures incorporating staircase electron injectors (SEIs), photocurrent increased with SEI thickness due to reduced effective barrier opposing carrier escape from the active region as confirmed by simulations. The carrier leakage percentile at -3V bias and 280 Wcm-2 optical excitation density increased from 24 % to 55 % when In 0.04Ga0.96N + In0.08Ga0.92N SEI thickness was increased from 4 nm + 4 nm to 30 nm + 30 nm. The increased leakage with thicker SEI correlates with increased carrier overflow under forward bias.

High color rendering index white organic light-emitting diode using levofloxacin as blue emitter

NASA Astrophysics Data System (ADS)

Miao, Yan-Qin; Gao, Zhi-Xiang; Zhang, Ai-Qin; Li, Yuan-Hao; Wang, Hua; Jia, Hu-Sheng; Liu, Xu-Guang; Tsuboi, Taijuf

2015-05-01

Levofloxacin (LOFX), which is well-known as an antibiotic medicament, was shown to be useful as a 452-nm blue emitter for white organic light-emitting diodes (OLEDs). In this paper, the fabricated white OLED contains a 452-nm blue emitting layer (thickness of 30 nm) with 1 wt% LOFX doped in CBP (4,4’-bis(carbazol-9-yl)biphenyl) host and a 584-nm orange emitting layer (thickness of 10 nm) with 0.8 wt% DCJTB (4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran) doped in CBP, which are separated by a 20-nm-thick buffer layer of TPBi (2,2’,2”-(benzene-1,3,5-triyl)-tri(1-phenyl-1H-benzimidazole). A high color rendering index (CRI) of 84.5 and CIE chromaticity coordinates of (0.33, 0.32), which is close to ideal white emission CIE (0.333, 0.333), are obtained at a bias voltage of 14 V. Taking into account that LOFX is less expensive and the synthesis and purification technologies of LOFX are mature, these results indicate that blue fluorescence emitting LOFX is useful for applications to white OLEDs although the maximum current efficiency and luminance are not high. The present paper is expected to become a milestone to using medical drug materials for OLEDs. Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-13-0927), the International Science & Technology Cooperation Program of China (Grant No. 2012DFR50460), the National Natural Science Foundation of China (Grant Nos. 21101111 and 61274056), and the Shanxi Provincial Key Innovative Research Team in Science and Technology, China (Grant No. 2012041011).

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

PubMed Central

Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

2017-01-01

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10–25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm. PMID:28294166

New yellow Ba 0.93Eu 0.07Al 2O 4 phosphor for warm-white light-emitting diodes through single-emitting-center conversion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xufan; Budai, John D.; Liu, Feng

2013-01-01

Phosphor-converted white light-emitting diodes for indoor illumination need to be warm-white (i.e., correlated color temperature <4000 K) with good color rendition (i.e., color rendering index >80). However, no single-phosphor, single-emitting-center-converted white light-emitting diodes can simultaneously satisfy the color temperature and rendition requirements due to the lack of sufficient red spectral component in the phosphors’ emission spectrum. Here, we report a new yellow Ba 0.93Eu 0.07Al 2O 4 phosphor that has a new orthorhombic lattice structure and exhibits a broad yellow photoluminescence band with sufficient red spectral component. Warm-white emissions with correlated color temperature <4000 K and color rendering index >80more » were readily achieved when combining the Ba 0.93Eu 0.07Al 2O 4 phosphor with a blue light-emitting diode (440–470 nm). This study demonstrates that warm-white light-emitting diodes with high color rendition (i.e., color rendering index >80) can be achieved based on single-phosphor, single-emitting-center conversion.« less

Evaluation of Ho:KPb2Cl5 as a Diode-Pumpable Mid-IR Laser Material

DTIC Science & Technology

2016-09-01

is the decay of the upper laser level without emitting light , due to the simultaneous emission of enough lattice vibrational quanta (phonons) to...have an energy level spacing that can result in emission at the desired laser wavelength, and that state must emit light efficiently. It is also...extremely desirable that it absorb light in the wavelength region where laser diodes operate most efficiently, approximately 800–1000 nm. This enables

Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction.

PubMed

Du, Chia-Fong; Lee, Chen-Hui; Cheng, Chao-Tsung; Lin, Kai-Hsiang; Sheu, Jin-Kong; Hsu, Hsu-Cheng

2014-01-01

We report electroluminescence (EL) from single horizontal ZnO microrod (MR) and p-GaN heterojunction light-emitting diodes under forward and reverse bias. EL spectra were composed of two blue emissions centered at 431 and 490 nm under forward biases, but were dominated by a ultraviolet (UV) emission located at 380 nm from n-ZnO MR under high reverse biases. Light-output-current characteristic of the UV emission reveals that the rate of radiative recombination is faster than that of the nonradiative recombination. Highly efficient ZnO excitonic recombination at reverse bias is caused by electrons tunneling from deep-level states near the n-ZnO/p-GaN interface to the conduction band in n-ZnO.

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Jamal-Eddine, Zane; Akyol, Fatih; Bajaj, Sanyam; Johnson, Jared M.; Calderon, Gabriel; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth

2018-02-01

We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs) emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light absorption in the p-type contact layers and low electrical injection efficiency due to poor p-type conduction. In this work, a polarization engineered Al0.65Ga0.35N/In0.2Ga0.8N tunnel junction layer is adopted for non-equilibrium hole injection to replace the conventionally used direct p-type contact. A reverse-graded AlGaN contact layer is further introduced to realize a low resistance contact to the top n-AlGaN layer. This led to the demonstration of a low tunnel junction resistance of 1.9 × 10-3 Ω cm2 obtained at 1 kA/cm2. Light emission at 287 nm with an on-wafer peak external quantum efficiency of 2.8% and a wall-plug efficiency of 1.1% was achieved. The measured power density at 1 kA/cm2 was 54.4 W/cm2, confirming the efficient hole injection through interband tunneling. With the benefits of the minimized internal absorption and efficient hole injection, a tunnel-injected UV LED structure could enable future high efficiency UV emitters.

Efficient white light generation from 2,3-diphenyl-1,2-dihydro-quinoxaline complex

NASA Astrophysics Data System (ADS)

Dwivedi, Y.; Kant, S.; Rai, R. N.; Rai, S. B.

2010-11-01

In this article, we report two organic materials dispersed in transparent poly (methyl methacrylate) matrix for efficient white light simulation under different optical excitations. A newly synthesized complex of benzoin and o-phenyldiamine is observed to be white on illumination with a blue LED. A new concept of white light emitting tube is also demonstrated. A mixture of 2,2″-([1,1'-biphenyl]-4,4'-diyldi-2,1-ethenediyl)-bis-benzenesulfonic acid disodium salt and complex is optimized to emit white light extended in the violet region on 355 nm laser excitation. The optical quality of the emitted white light is adjudged by the CIE coordinate, correlated color temperature and color rendition index in both the cases.

Pink light emitting long-lasting phosphorescence in Sm 3+-doped CdSiO 3

NASA Astrophysics Data System (ADS)

Lei, Bingfu; Liu, Yingliang; Liu, Jie; Ye, Zeren; Shi, Chunshan

2004-04-01

Novel pink light emitting long-lasting afterglow CdSiO 3:Sm 3+ phosphors are prepared by the conventional high-temperature solid-state method and their luminescent properties are investigated. XRD and photoluminescence (PL) spectra are used to characterize the synthesized phosphors. The phosphors are well crystallized by calcinations at 1050°C for 5 h. These phosphors emit pink light and show long-lasting phosphorescence after they are excited with 254 nm ultraviolet light. The phosphorescence lasts for nearly 5 h in the light perception of the dark-adapted human eye (0.32 mcd/m 2). The phosphorescence mechanism is also investigated. All the results indicate that these phosphors have promising potential practical applications.

Cr/ITO semi-transparent n-type electrode for high-efficiency AlGaN/InGaN-based near ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Kim, Hwankyo; Kim, Dae-Hyun; Seong, Tae-Yeon

2017-11-01

We investigated the electrical performance of near ultraviolet (NUV) (390 nm) light-emitting diodes (LEDs) fabricated with various semi-transparent Cr/ITO n-type contacts. It was shown that after annealing at 400 °C, Cr/ITO (10 nm/40 nm) contact was ohmic with a specific contact resistance of 9.8 × 10-4 Ωcm2. NUV AlGaN-based LEDs fabricated with different Cr/ITO (6-12 nm/40 nm) electrodes exhibited forward-bias voltages of 3.27-3.30 V at an injection current of 20 mA, which are similar to that of reference LED with Cr/Ni/Au (20 nm/25 nm/200 nm) electrode (3.29 V). The LEDs with the Cr/ITO electrodes gave series resistances of 10.69-11.98 Ω, while the series resistance is 10.84 Ohm for the reference LED. The transmittance of the Cr/ITO samples significantly improved when annealed at 400 °C. The transmittance (25.8-45.2% at 390 nm) of the annealed samples decreased with increasing Cr layer thickness. The LEDs with the Cr/ITO electrodes exhibited higher light output power than reference LED (with Cr/Ni/Au electrode). In particular, the LED with the Cr/ITO (12 nm/40 nm) electrode showed 9.3% higher light output power at 100 mA than reference LED. Based on the X-ray photoemission spectroscopy (XPS) and electrical results, the ohmic formation mechanism is described and discussed.

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN.

PubMed

Soh, C B; Liu, W; Yong, A M; Chua, S J; Chow, S Y; Tripathy, S; Tan, R J N

2010-08-01

Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template formed by regrowth of GaN over SiO(2) film patterned with an anodic aluminum oxide mask with holes of 125 nm diameter and a period of 250 nm. The growth of InGaN/GaN multiple quantum wells on these stress relaxed low defect density templates improves the internal quantum efficiency by 15% for the cyan-green multiple quantum wells. Higher emission intensity with redshift in the PL peak emission wavelength is obtained for the indium-rich nanostructures incorporated in multiple quantum wells. The quantum wells grown on the nano-epitaxially lateral overgrown GaN has a weaker piezoelectric field and hence shows a minimal peak shift with application of higher injection current. An enhancement of external quantum efficiency is achieved for the apple-white light emitting diodes grown on the nano-epitaxially lateral overgrown GaN template based on the light -output power measurement. The improvement in light extraction efficiency, η(extraction,) was found to be 34% for the cyan-green emission peak and 15% from the broad long wavelength emission with optimized lattice period.

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN

NASA Astrophysics Data System (ADS)

Soh, C. B.; Liu, W.; Yong, A. M.; Chua, S. J.; Chow, S. Y.; Tripathy, S.; Tan, R. J. N.

2010-11-01

Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template formed by regrowth of GaN over SiO2 film patterned with an anodic aluminum oxide mask with holes of 125 nm diameter and a period of 250 nm. The growth of InGaN/GaN multiple quantum wells on these stress relaxed low defect density templates improves the internal quantum efficiency by 15% for the cyan-green multiple quantum wells. Higher emission intensity with redshift in the PL peak emission wavelength is obtained for the indium-rich nanostructures incorporated in multiple quantum wells. The quantum wells grown on the nano-epitaxially lateral overgrown GaN has a weaker piezoelectric field and hence shows a minimal peak shift with application of higher injection current. An enhancement of external quantum efficiency is achieved for the apple-white light emitting diodes grown on the nano-epitaxially lateral overgrown GaN template based on the light -output power measurement. The improvement in light extraction efficiency, ηextraction, was found to be 34% for the cyan-green emission peak and 15% from the broad long wavelength emission with optimized lattice period.

Bactericidal effects of a high-power, red light-emitting diode on two periodontopathic bacteria in antimicrobial photodynamic therapy in vitro.

PubMed

Umeda, Makoto; Tsuno, Akiko; Okagami, Yoshihide; Tsuchiya, Fumito; Izumi, Yuichi; Ishikawa, Isao

2011-11-01

  Light-emitting diodes have been investigated as new light activators for photodynamic therapy. We investigated the bactericidal effects of high-power, red light-emitting diodes on two periodontopathic bacteria in vitro.   A light-emitting diode (intensity: 1100 mW/cm(2) , peak wavelength: 650 nm) was used to irradiate a bacterial solution for either 10 or 20 s. Bacterial solutions (Porphyromonas gingivalis or Aggregatibacter actinomycetemcomitans) at a concentration of 2.5 × 10(6) c.f.u./mL were mixed with an equal volume of either methylene blue or toluidine blue O (0-20 μg/mL) and added to titer plate wells. The plate wells were irradiated with red light-emitting diode light from a distance of 22 or 40 mm. The contents were diluted, and 50 μL was smeared onto blood agar plates. After 1 week of culturing, bacterial c.f.u. were counted.   The light-emitting diode energy density was estimated to be approximately 4 and 8 J/cm(2) after 10 and 20 s of irradiation, respectively. Red light-emitting diode irradiation for 10 s from a distance of 22 mm, combined with methylene blue at concentrations >10 μg/mL, completely killed Porphyromonas gingivalis and Aggregatibacter actinomycetemcomitans.   High-power, red light-emitting diode irradiation with a low concentration of dye showed effective bactericidal effects against two periodontopathic bacteria. © 2011 Blackwell Publishing Asia Pty Ltd.

Low-Level Light Therapy with 410 nm Light Emitting Diode Suppresses Collagen Synthesis in Human Keloid Fibroblasts: An In Vitro Study

PubMed Central

Lee, Hyun Soo; Jung, Soo-Eun; Kim, Sue Kyung; Kim, You-Sun; Sohn, Seonghyang

2017-01-01

Background Keloids are characterized by excessive collagen deposition in the dermis, in which transforming growth factor β (TGF-β)/Smad signaling plays an important role. Low-level light therapy (LLLT) is reported as effective in preventing keloids in clinical reports, recently. To date, studies investigating the effect of LLLT on keloid fibroblasts are extremely rare. Objective We investigated the effect of LLLT with blue (410 nm), red (630 nm), and infrared (830 nm) light on the collagen synthesis in keloid fibroblasts. Methods Keloid fibroblasts were isolated from keloid-revision surgery samples and irradiated using 410-, 630-, 830-nm light emitting diode twice, with a 24-hour interval at 10 J/cm2. After irradiation, cells were incubated for 24 and 48 hours and real-time quantitative reverse transcription polymerase chain reaction was performed. Western blot analysis was also performed in 48 hours after last irradiation. The genes and proteins of collagen type I, TGF-β1, Smad3, and Smad7 were analyzed. Results We observed no statistically significant change in the viability of keloid fibroblasts after irradiation. Collagen type I was the only gene whose expression significantly decreased after irradiation at 410 nm when compared to the non-irradiated control. Western blot analysis showed that LLLT at 410 nm lowered the protein levels of collagen type I compared to the control. Conclusion LLLT at 410 nm decreased the expression of collagen type I in keloid fibroblasts and might be effective in preventing keloid formation in their initial stage. PMID:28392641

Low-Level Light Therapy with 410 nm Light Emitting Diode Suppresses Collagen Synthesis in Human Keloid Fibroblasts: An In Vitro Study.

PubMed

Lee, Hyun Soo; Jung, Soo-Eun; Kim, Sue Kyung; Kim, You-Sun; Sohn, Seonghyang; Kim, You Chan

2017-04-01

Keloids are characterized by excessive collagen deposition in the dermis, in which transforming growth factor β (TGF-β)/Smad signaling plays an important role. Low-level light therapy (LLLT) is reported as effective in preventing keloids in clinical reports, recently. To date, studies investigating the effect of LLLT on keloid fibroblasts are extremely rare. We investigated the effect of LLLT with blue (410 nm), red (630 nm), and infrared (830 nm) light on the collagen synthesis in keloid fibroblasts. Keloid fibroblasts were isolated from keloid-revision surgery samples and irradiated using 410-, 630-, 830-nm light emitting diode twice, with a 24-hour interval at 10 J/cm 2 . After irradiation, cells were incubated for 24 and 48 hours and real-time quantitative reverse transcription polymerase chain reaction was performed. Western blot analysis was also performed in 48 hours after last irradiation. The genes and proteins of collagen type I, TGF-β1, Smad3, and Smad7 were analyzed. We observed no statistically significant change in the viability of keloid fibroblasts after irradiation. Collagen type I was the only gene whose expression significantly decreased after irradiation at 410 nm when compared to the non-irradiated control. Western blot analysis showed that LLLT at 410 nm lowered the protein levels of collagen type I compared to the control. LLLT at 410 nm decreased the expression of collagen type I in keloid fibroblasts and might be effective in preventing keloid formation in their initial stage.

A dual-emitting core-shell carbon dot-silica-phosphor composite for white light emission

NASA Astrophysics Data System (ADS)

Chen, Yonghao; Lei, Bingfu; Zheng, Mingtao; Zhang, Haoran; Zhuang, Jianle; Liu, Yingliang

2015-11-01

A unique dual-emitting core-shell carbon dot-silica-phosphor (CDSP) was constructed from carbon dots (CDs), tetraethoxysilane (TEOS) and Sr2Si5N8:Eu2+ phosphor through a one-pot sol-gel method. Blue emitting CDs uniformly disperse in the silica layer covering the orange emitting phosphor via a polymerization process, which makes CDSP achieve even white light emission. Tunable photoluminescence of CDSP is observed and the preferable white light emission is achieved through changing the excitation wavelength or controlling the mass ratio of the phosphor. When CDSP powders with a phosphor rate of 3.9% and 5.1% are excited at a wavelength of 400 nm, preferable white light emission is observed, with Commission Internationale de l'Eclairage (CIE) coordinates of (0.32, 0.32) and (0.34, 0.32), respectively. Furthermore, CDSP can mix well with epoxy resin to emit strong and even white light, and based on this, a CDSP-based white LED with a high colour rendering index (CRI) of 94 was fabricated.A unique dual-emitting core-shell carbon dot-silica-phosphor (CDSP) was constructed from carbon dots (CDs), tetraethoxysilane (TEOS) and Sr2Si5N8:Eu2+ phosphor through a one-pot sol-gel method. Blue emitting CDs uniformly disperse in the silica layer covering the orange emitting phosphor via a polymerization process, which makes CDSP achieve even white light emission. Tunable photoluminescence of CDSP is observed and the preferable white light emission is achieved through changing the excitation wavelength or controlling the mass ratio of the phosphor. When CDSP powders with a phosphor rate of 3.9% and 5.1% are excited at a wavelength of 400 nm, preferable white light emission is observed, with Commission Internationale de l'Eclairage (CIE) coordinates of (0.32, 0.32) and (0.34, 0.32), respectively. Furthermore, CDSP can mix well with epoxy resin to emit strong and even white light, and based on this, a CDSP-based white LED with a high colour rendering index (CRI) of 94 was fabricated. Electronic supplementary information (ESI) available: Characterization methods, SEM and TEM images, fluorescence spectra and CIE coordinates of CDSP. See DOI: 10.1039/c5nr05637c

Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor

NASA Astrophysics Data System (ADS)

Feng, M.; Holonyak, N.; Chu-Kung, B.; Walter, G.; Chan, R.

2004-06-01

We report radiative recombination in the base layer of Type-II InP/GaAsSb/InP double heterojunction bipolar light-emitting transistors (HBLET) operating in the common-emitter configuration. The typical current gain, β, for a 120×120 μm2 emitter area of the HBLET is 38. The optical emission wavelength from a 30 nm GaAs0.51Sb0.49 base is centered at λpeak=1600 nm. Three-port operation of the Type-II HBLET with simultaneously an amplified electrical output and an optical output with signal modulation is demonstrated at 10 kHz.

Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jeomoh; Ji, Mi-Hee; Detchprohm, Theeradetch

2014-04-07

We report on the direct patterning of two-dimensional periodic structures in GaN-based light-emitting diodes (LEDs) through laser interference ablation for the fast and reliable fabrication of periodic micro- and nano-structures aimed at enhancing light output. Holes arranged in a two-dimensional hexagonal lattice array having an opening size of 500 nm, depth of 50 nm, and a periodicity of 1 μm were directly formed by three-beam laser interference without photolithography or electron-beam lithography processes. The laser-patterned LEDs exhibit an enhancement in light output power of 20% compared to conventional LEDs having a flat top surface without degradation of electrical and optical properties of themore » top p-GaN layer and the active region, respectively.« less

Long term stable deep red light-emitting electrochemical cells based on an emissive, rigid cationic Ir(iii) complex

DOE PAGES

Namanga, Jude E.; Ruhr-Univ. Bochum, Bochum; Gerlitzki, Niels; ...

2017-02-17

Here, the new cationic iridium complex [Ir(bzq) 2(biq)][PF 6] (bzq = benzo[ h]quinolinato and biq = 2,2'-biquinoline) has been synthesized for application as an emitter in light emitting electrochemical cells (LECs). The molecular structure and crystal packing of this complex were established by single X-ray diffraction (SXRD). The electrochemical and photophysical properties of the complex were examined to determine the frontier orbital energies as well as the optical transitions that led to photoemission. The complex was found to emit at 644 nm and 662 nm for powder and thin films, respectively. A high powder photoluminescence quantum yield of 25% wasmore » determined, which is attributed to a reduction in vibrational modes of the complex due to the use of the rigid cyclometalated (C^N) bzq ligand. A LEC with [Ir(bzq) 2(biq)][PF 6] as the emitter was fabricated which showed a deep red emission (662 nm) with a luminance of 33.65 cd m –2, yielding a current efficiency of 0.33 cd A –1 and a power efficiency of 0.2 lm W –1. Most importantly, the LEC based on [Ir(bzq) 2(biq)][PF 6] demonstrated a lifetime of 280 hours which is among the longest device lifetimes reported for any deep red light emitting LEC.« less

Long term stable deep red light-emitting electrochemical cells based on an emissive, rigid cationic Ir(iii) complex

DOE Office of Scientific and Technical Information (OSTI.GOV)

Namanga, Jude E.; Ruhr-Univ. Bochum, Bochum; Gerlitzki, Niels

Here, the new cationic iridium complex [Ir(bzq) 2(biq)][PF 6] (bzq = benzo[ h]quinolinato and biq = 2,2'-biquinoline) has been synthesized for application as an emitter in light emitting electrochemical cells (LECs). The molecular structure and crystal packing of this complex were established by single X-ray diffraction (SXRD). The electrochemical and photophysical properties of the complex were examined to determine the frontier orbital energies as well as the optical transitions that led to photoemission. The complex was found to emit at 644 nm and 662 nm for powder and thin films, respectively. A high powder photoluminescence quantum yield of 25% wasmore » determined, which is attributed to a reduction in vibrational modes of the complex due to the use of the rigid cyclometalated (C^N) bzq ligand. A LEC with [Ir(bzq) 2(biq)][PF 6] as the emitter was fabricated which showed a deep red emission (662 nm) with a luminance of 33.65 cd m –2, yielding a current efficiency of 0.33 cd A –1 and a power efficiency of 0.2 lm W –1. Most importantly, the LEC based on [Ir(bzq) 2(biq)][PF 6] demonstrated a lifetime of 280 hours which is among the longest device lifetimes reported for any deep red light emitting LEC.« less

Mn2- x Y x (MoO4)3 Phosphor Excited by UV GaN-Based Light-Emitting Diode for White Emission

NASA Astrophysics Data System (ADS)

Chen, Lung-Chien; Tseng, Zong-Liang; Hsu, Ting-Chun; Yang, Shengyi; Chen, Yuan-Bin

2017-04-01

One option for low-cost white light-emitting diodes (LEDs) is the combination of a near-ultraviolet (UV) LED chip (382 nm) and a single phosphor. Such Mn2- x Y x (MoO4)3 single phosphors have been fabricated by a simple solid-state reaction route and their emission color tuned by controlling the Mn doping amount. The chromaticity coordinates of the white light emitted by the UV GaN LED with the MnY(MoO4)3 phosphor were x = 0.5204 and y = 0.4050 [correlated color temperature (CCT) = 7958 K].

A promising red-emitting phosphor for white-light-emitting diodes prepared by a modified solid-state reaction

NASA Astrophysics Data System (ADS)

Ren, Fuqiang; Chen, Donghua

2010-02-01

Using urea, boric acid and polyethylene glycol (PEG) as auxiliary reagents, the novel red-emitting phosphors Ca 19Zn 2 (PO 4) 14:Eu 3+ have been successfully synthesized by a modified solid-state reaction. Thermogravimetric (TG) analysis, X-ray diffraction (XRD), transmission electron microscopy (TEM) and photoluminescence (PL) spectra were used to characterize the resulting phosphors. The dependence of the photoluminescence properties of Ca 19Zn 2 (PO 4) 14:Eu 3+ phosphors upon urea, boric acid and PEG concentration and the quadric-sintered temperature were investigated. Luminescent measurements showed that the phosphors can be efficiently excited by ultraviolet (UV) to visible region, emitting a red light with a peak wavelength of 616 nm. The material has potential application as a fluorescent material for ultraviolet light-emitting diodes (UV-LEDs).

Effect of 670-nm Light-Emitting Diode Light On Neuronal Cultures

NASA Technical Reports Server (NTRS)

Wong-Riley, Margaret T. T.; Whelan, Harry T.

2002-01-01

Light close to and within the near infrared range has documented benefits for promoting wound healing in human and animal studies. Our preliminary results using light-emitting diodes (LEDs) in this range have also demonstrated two-to five-fold increases in growth-phase-specific DNA synthesis in normal fibroblasts, muscle cells, osteoblasts, and mucosal epithelial cells in tissue cultures. However, the mechanisms of action of such light on cells are poorly understood. We hypothesized that the therapeutic effects of such light result from the stimulation of cellular events associated with increases in cytochrome oxidase activity. As a first step in testing our hypothesis, we subjected primary neuronal cultures to impulse blockade by tetrodotoxin (TTX), a voltage-dependent sodium channel blocker, and applied LED light at 670 nm to determine if it could partially or fully reverse the reduction of cytochrome oxidase activity by TTX. The wavelength and parameters were previously tested to be beneficial for wound healing.

The synthesis and luminescence properties of a novel red-emitting phosphor: Eu3+-doped Ca9La(PO4)7

NASA Astrophysics Data System (ADS)

Liang, Zehui; Mu, Zhongfei; Wang, Qiang; Zhu, Daoyun; Wu, Fugen

2017-10-01

A series of novel red-emitting phosphors Ca9La1- x (PO4)7: xEu3+ were synthesized by high-temperature solid state reactions. The photoluminescence excitation and photoluminescence spectra of these phosphors were investigated in detail. O2--Eu3+ charge transfer band peaking at about 261 nm is dominant in the PLE spectra of Eu3+-doped Ca9La(PO4)7, indicating that the phosphors are suitable for tricolor fluorescent lamps. The phosphors also show a good absorption in near ultraviolet (around 395 nm) and blue (around 465 nm) spectral region, which indicates that it can be pumped with NUV and blue chips for white light-emitting diodes. The transition of 5D0 → 7F2 of Eu3+ in this lattice can emit bright red light. Ca9La(PO4)7 could accommodate a large amount of Eu3+ with an optimal concentration of 60 mol%. The dipole-dipole interaction between Eu3+ is the dominant mechanism for concentration quenching of Eu3+. The calculated color coordinates lie in red region ( x = 0.64, y = 0.36), which is close to Y2O3: 0.05Eu3+ ( x = 0.65, y = 0.34). The integral emission intensity of Ca9La0.4(PO4)7: 0.6Eu3+ is 1.9 times stronger than that of widely used commercial red phosphor Y2O3: 0.05Eu3+. All these results indicate that Eu3+-doped Ca9La(PO4)7 is a promising red-emitting phosphor which can be used in tricolor fluorescent lamps and white light-emitting diodes.

High extraction efficiency ultraviolet light-emitting diode

DOEpatents

Wierer, Jonathan; Montano, Ines; Allerman, Andrew A.

2015-11-24

Ultraviolet light-emitting diodes with tailored AlGaN quantum wells can achieve high extraction efficiency. For efficient bottom light extraction, parallel polarized light is preferred, because it propagates predominately perpendicular to the QW plane and into the typical and more efficient light escape cones. This is favored over perpendicular polarized light that propagates along the QW plane which requires multiple, lossy bounces before extraction. The thickness and carrier density of AlGaN QW layers have a strong influence on the valence subband structure, and the resulting optical polarization and light extraction of ultraviolet light-emitting diodes. At Al>0.3, thinner QW layers (<2.5 nm are preferred) result in light preferentially polarized parallel to the QW plane. Also, active regions consisting of six or more QWs, to reduce carrier density, and with thin barriers, to efficiently inject carriers in all the QWs, are preferred.

White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode

PubMed Central

2010-01-01

We report the fabrication of heterostructure white light–emitting diode (LED) comprised of n-ZnO nanotubes (NTs) aqueous chemically synthesized on p-GaN substrate. Room temperature electroluminescence (EL) of the LED demonstrates strong broadband white emission spectrum consisting of predominating peak centred at 560 nm and relatively weak violet–blue emission peak at 450 nm under forward bias. The broadband EL emission covering the whole visible spectrum has been attributed to the large surface area and high surface states of ZnO NTs produced during the etching process. In addition, comparison of the EL emission colour quality shows that ZnO nanotubes have much better quality than that of the ZnO nanorods. The colour-rendering index of the white light obtained from the nanotubes was 87, while the nanorods-based LED emit yellowish colour. PMID:20672120

Green light emitting curcumin dye in organic solvents

NASA Astrophysics Data System (ADS)

Mubeen, Mohammad; Deshmukh, Abhay D.; Dhoble, S. J.

2018-05-01

In this modern world, the demand for the white light emission has increased because of its wide applications in various display and lighting devices, sensors etc. This white light can be produced by mixing red, green and blue lights. Thus this green light can be produced from the plant extract i.e., Turmeric. Curcumin is the essential element present in turmeric to generate the green light. The Photoluminescence (PL) emission is observed at 540 nm at 380nm excitation. This method of generating green light is very simple, cost effective and efficient when compared to other methods.

Green Light Pulse Oximeter

DOEpatents

Scharf, John Edward

1998-11-03

A reflectance pulse oximeter that determines oxygen saturation of hemoglobin using two sources of electromagnetic radiation in the green optical region, which provides the maximum reflectance pulsation spectrum. The use of green light allows placement of an oximetry probe at central body sites (e.g., wrist, thigh, abdomen, forehead, scalp, and back). Preferably, the two green light sources alternately emit light at 560 nm and 577 nm, respectively, which gives the biggest difference in hemoglobin extinction coefficients between deoxyhemoglobin, RHb, and oxyhemoglobin, HbO.sub.2.

Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Park, Jae-Seong; Kim, Jae-Ho; Kim, Jun-Yong; Kim, Dae-Hyun; Na, Jin-Young; Kim, Sun-Kyung; Kang, Daesung; Seong, Tae-Yeon

2017-01-01

Indium tin oxide (ITO) nanodots (NDs) were combined with Ag nanowires (Ag NWs) as a p-type electrode in near ultraviolet AlGaN-based light-emitting diodes (LEDs) to increase light output power. The Ag NWs were 30 ± 5 nm in diameter and 25 ± 5 μm in length. The transmittance of 10 nm-thick ITO-only was 98% at 385 nm, while the values for ITO ND/Ag NW were 83%-88%. ITO ND/Ag NW films showed lower sheet resistances (32-51 Ω sq-1) than the ITO-only film (950 Ω sq-1). LEDs (chip size: 300 × 800 μm2) fabricated using the ITO NDs/Ag NW electrodes exhibited higher forward-bias voltages (3.52-3.75 V at 20 mA) than the LEDs with the 10 nm-thick ITO-only electrode (3.5 V). The LEDs with ITO ND/Ag NW electrodes yielded a 24%-62% higher light output power (at 20 mA) than those with the 10 nm-thick ITO-only electrode. Furthermore, finite-difference time-domain (FDTD) simulations were performed to investigate the extraction efficiency. Based on the emission images and FDTD simulations, the enhanced light output with the ITO ND/Ag NW electrodes is attributed to improved current spreading and better extraction efficiency.

Improving spinach, radish, and lettuce growth under red light-emitting diodes (LEDs) with blue light supplementation

NASA Technical Reports Server (NTRS)

Yorio, N. C.; Goins, G. D.; Kagie, H. R.; Wheeler, R. M.; Sager, J. C.

2001-01-01

Radish (Raphanus sativus L. cv. Cherriette), lettuce (Lactuca sativa L. cv. Waldmann's Green), and spinach (Spinacea oleracea L. cv. Nordic IV) plants were grown under 660-nm red light-emitting diodes (LEDs) and were compared at equal photosynthetic photon flux (PPF) with either plants grown under cool-white fluorescent lamps (CWF) or red LEDs supplemented with 10% (30 micromoles m-2 s-1) blue light (400-500 nm) from blue fluorescent (BF) lamps. At 21 days after planting (DAP), leaf photosynthetic rates and stomatal conductance were greater for plants grown under CWF light than for those grown under red LEDs, with or without supplemental blue light. At harvest (21 DAP), total dry-weight accumulation was significantly lower for all species tested when grown under red LEDs alone than when grown under CWF light or red LEDs + 10% BF light. Moreover, total dry weight for radish and spinach was significantly lower under red LEDs + 10% BF than under CWF light, suggesting that addition of blue light to the red LEDs was still insufficient for achieving maximal growth for these crops.

Pure white-light emitting ultrasmall organic-inorganic hybrid perovskite nanoclusters.

PubMed

Teunis, Meghan B; Lawrence, Katie N; Dutta, Poulami; Siegel, Amanda P; Sardar, Rajesh

2016-10-14

Organic-inorganic hybrid perovskites, direct band-gap semiconductors, have shown tremendous promise for optoelectronic device fabrication. We report the first colloidal synthetic approach to prepare ultrasmall (∼1.5 nm diameter), white-light emitting, organic-inorganic hybrid perovskite nanoclusters. The nearly pure white-light emitting ultrasmall nanoclusters were obtained by selectively manipulating the surface chemistry (passivating ligands and surface trap-states) and controlled substitution of halide ions. The nanoclusters displayed a combination of band-edge and broadband photoluminescence properties, covering a major part of the visible region of the solar spectrum with unprecedentedly large quantum yields of ∼12% and photoluminescence lifetime of ∼20 ns. The intrinsic white-light emission of perovskite nanoclusters makes them ideal and low cost hybrid nanomaterials for solid-state lighting applications.

Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction

PubMed Central

2014-01-01

We report electroluminescence (EL) from single horizontal ZnO microrod (MR) and p-GaN heterojunction light-emitting diodes under forward and reverse bias. EL spectra were composed of two blue emissions centered at 431 and 490 nm under forward biases, but were dominated by a ultraviolet (UV) emission located at 380 nm from n-ZnO MR under high reverse biases. Light-output-current characteristic of the UV emission reveals that the rate of radiative recombination is faster than that of the nonradiative recombination. Highly efficient ZnO excitonic recombination at reverse bias is caused by electrons tunneling from deep-level states near the n-ZnO/p-GaN interface to the conduction band in n-ZnO. PMID:25232299

Formation of 2D bright spatial solitons in lithium niobate with photovoltaic response and incoherent background

NASA Astrophysics Data System (ADS)

Pustozerov, A.; Shandarov, V.

2017-12-01

The influence of incoherent background illumination produced by light-emitting diodes (LED's) of different average wavelengths and laser diode emitting in blue region of visible on diffraction characteristics of narrow coherent light beams of He-Ne laser due to refractive index changes of Fe-doped lithium niobate sample are studied. It has been experimentally demonstrated that nonlinear diffraction of red beams with wavelength 633 nm and diameters on full width of half maximum (FWHM) near to 15 μm may be totally compensated using background light with average wavelengths 450 - 465 nm. To provide the necessary intensity of incoherent background, the combinations of spherical and cylindrical concave lenses with blue LED and laser diode module without focusing its beam have been used.

Organic Light Emitting Diodes with Opal Photonic Crystal Layer and Carbon Nanotube Anode

NASA Astrophysics Data System (ADS)

Ovalle Robles, Raquel; Del Rocio Nava, Maria; Williams, Christopher; Zhang, Mei; Fang, Shaoli; Lee, Sergey; Baughman, Ray; Zakhidov, Anvar

2007-03-01

We report electroluminescence intensity and spectral changes in light emission from organic light emitting diode (OLEDs) structures, which have thin transparent films of opal photonic crystal (PC). The anode in such PC-OLED is laminated on opal layer from free standing optically transparent multiwall carbon nanotubes (T-CNT) sheets made by dry spinning from CVD grown forests. Silica and polystyrene opal films were grown on glass substrates by vertical sedimentation in colloids in thermal baths and the particle size of opal spheres ranges from 300 nm to 450 nm. The use of T-CNTs, (coated by PEDOT-PSS to avoid shorting) as hole injector, allows to eliminate the use of vacuum deposition of metals and permits to achieve tunneling hole injection regime from CNT tips into Alq^3 emission layer

Zero- and two-dimensional hybrid carbon phosphors for high colorimetric purity white light-emission.

PubMed

Ding, Yamei; Chang, Qing; Xiu, Fei; Chen, Yingying; Liu, Zhengdong; Ban, Chaoyi; Cheng, Shuai; Liu, Juqing; Huang, Wei

2018-03-01

Carbon nanomaterials are promising phosphors for white light emission. A facile single-step synthesis method has been developed to prepare zero- and two-dimensional hybrid carbon phosphors for the first time. Zero-dimensional carbon dots (C-dots) emit bright blue luminescence under 365 nm UV light and two-dimensional nanoplates improve the dispersity and film forming ability of C-dots. As a proof-of-concept application, the as-prepared hybrid carbon phosphors emit bright white luminescence in the solid state, and the phosphor-coated blue LEDs exhibit high colorimetric purity white light-emission with a color coordinate of (0.3308, 0.3312), potentially enabling the successful application of white emitting phosphors in the LED field.

The effect of citric acid on morphology and photoluminescence properties of white light emitting ZnO-SiO2 nanocomposites

NASA Astrophysics Data System (ADS)

Sivakami, R.; Thiyagarajan, P.

2016-07-01

The white light emitting ZnO-SiO2 nanocomposites were synthesized by sol-gel combustion method using zinc nitrate, citric acid and tetraethoxysilane. To analyze the effect of fuel content on the photoluminescence properties of ZnO-SiO2 nanocomposites, the citric acid content was varied as 1, 5, and 10 moles with respect to one mole of zinc. The SEM images of the nanocomposites revealed the spherical, flower and platelet like morphology with variation in citric acid content and annealing temperatures. The ZnO-SiO2 nanocomposites prepared with various Zn:CA ratio excited at UV (280 nm), near UV (365 nm), violet (405 nm) and blue (465 nm) wavelength showed blue and greenish-yellow emission. Among all ratios, the ZnO-SiO2 nanocomposites with Zn:CA - 1:1 ratio showed the intense broad band emission compared to Zn:CA - 1:5 and 1:10 values. This particular composition of sample excited under violet (405 nm) LED source shows white light, as confirmed by the CIE chromaticity coordinates (x = 0.342, y = 0.318).

[Color-tunable nano-material alpha-NaYF4 : Yb, Er, Tm prepared by microemulsion-hydrothermal method].

PubMed

Long, Dan-Dan; Zhang, Qing-Xia; Wang, Yu; Zhang, Fan; Wang, Yan-Fei; Zhou, Xin; Qi, Xiao-Hua; Zhang, Heng; Yan, Jing-Hui; Zou, Ming-Qiang

2013-08-01

NaYF4 : Yb3+, Er3+, Tm3+ nanoparticles were prepared by microemulsion-hydrothermal method. Crystal phase, morphology and structure of the samples were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The luminescence properties were studied by up-conversional fluorescence spectroscopy. The XRD patterns of as-prepared samples were in agreement with the PDF # 77-2042 of cubic NaYF4. SEM images of the particles showed that the samples were cotton-like spherical in shape and which were assembled by smaller nano-particles. The average size was 120 nm, while the shape was regular and the particle size was homogeneous. Under the excitation of 980 nm, the as-prepared particles could emit blue (438 and 486 nm), green (523 and 539 nm) and red (650 nm) light simultaneously. It can be seen from the color coordinates figure (CIE) that when doping concentration ratio of Tm3+ and E3+ increased from 0 to 2, the whole emitting light color of samples movedto green region. While the ratio was 1 : 1, pseudo white light was obtained. As the ratio changed from 2 to 7, the luminous color was moved to red region.

Mitochondrial damage and cytoskeleton reorganization in human dermal fibroblasts exposed to artificial visible light similar to screen-emitted light.

PubMed

Rascalou, Adeline; Lamartine, Jérôme; Poydenot, Pauline; Demarne, Frédéric; Bechetoille, Nicolas

2018-05-05

Artificial visible light is everywhere in modern life. Social communication confronts us with screens of all kinds, and their use is on the rise. We are therefore increasingly exposed to artificial visible light, the effects of which on skin are poorly known. The purpose of this study was to model the artificial visible light emitted by electronic devices and assess its effect on normal human fibroblasts. The spectral irradiance emitted by electronic devices was optically measured and equipment was developed to accurately reproduce such artificial visible light. Effects on normal human fibroblasts were analyzed on human genome microarray-based gene expression analysis. At cellular level, visualization and image analysis were performed on the mitochondrial network and F-actin cytoskeleton. Cell proliferation, ATP release and type I procollagen secretion were also measured. We developed a device consisting of 36 LEDs simultaneously emitting blue, green and red light at distinct wavelengths (450 nm, 525 nm and 625 nm) with narrow spectra and equivalent radiant power for the three colors. A dose of 99 J/cm 2 artificial visible light was selected so as not to induce cell mortality following exposure. Microarray analysis revealed 2984 light-modulated transcripts. Functional annotation of light-responsive genes revealed several enriched functions including, amongst others, the "mitochondria" and "integrin signaling" categories. Selected results were confirmed by real-time quantitative PCR, analyzing 24 genes representing these two categories. Analysis of micro-patterned culture plates showed marked fragmentation of the mitochondrial network and disorganization of the F-actin cytoskeleton following exposure. Functionally, there was considerable impairment of cell growth and spread, ATP release and type I procollagen secretion in exposed fibroblasts. Artificial visible light induces drastic molecular and cellular changes in normal human fibroblasts. This may impede normal cellular functions and contribute to premature skin aging. The present results extend our knowledge of the effects of the low-energy wavelengths that are increasingly used to treat skin disorders. Copyright © 2018 Japanese Society for Investigative Dermatology. Published by Elsevier B.V. All rights reserved.

Synthesis and luminescence properties of blue-emitting phosphor Ca12 Al14 O32 F2 :Eu2+ for white light-emitting diode.

PubMed

Chen, Wanping; Zhang, Xinzhu; Wang, Liping

2017-09-01

A blue-emitting phosphor Ca 12 Al 14 O 32 F 2 :Eu 2+ was synthesized using a high-temperature solid-state reaction under a reductive atmosphere. The X-ray diffraction measurements indicate that a pure phase Ca 12 Al 14 O 32 F 2 :Eu 2+ can be obtained for low doping concentration of Eu 2+ . The phosphor has a strong absorption in the range 270-420 nm with a maximum at ~340 nm and blue emission in the range 400-500 nm with chromatic coordination of (0.152, 0.045). The optimal doping concentration is ~0.24. In addition, the luminescence properties of the as-synthesized phosphor were evaluated by comparison with those of Ca 12 Al 14 O 32 Cl 2 :Eu 2+ and the commercially available phosphor BaMgAl 10 O 17 :Eu 2+ . The emission intensity of Ca 12 Al 14 O 32 F 2 :Eu 2+ was ~72% that of BaMgAl 10 O 17 :Eu 2+ under excitation at λ = 375 nm. The results indicate that Ca 12 Al 14 O 32 F 2 :Eu 2+ has potential application as a near-UV-convertible blue phosphor for white light-emitting diodes. Copyright © 2017 John Wiley & Sons, Ltd.

[Influence of MnO3 on Photoelectric Performance in Organic Light Emitting Diodes].

PubMed

Guan, Yun-xia; Chen, Li-jia; Chen, Ping; Fu, Xiao-qiang; Niu, Lian-bin

2016-03-01

Organic Light Emitting Diodes (OLEDs) has been a promising new research point that has received much attention recently. Emission in a conventional OLED originates from the recombination of carriers (electrons and holes) that are injected from external electrodes. In the device, Electrons, on the other hand, are injected from the Al cathode to an electron-transporting layer and travel to the same emissive zone. Holes are injected from the transparent ITO anode to a hole-transporting layer and holes reach an emitting zone through the holetransporting layer. Electrons and holes recombine at the emissive film to formsinglet excited states, followed by emissive light. It is because OLED is basically an optical device and its structure consists of organic or inorganic layers of sub-wavelength thickness with different refractive indices. When the electron and holes are injected through the electrodes, they combine in the emission zone emitting the photons. These photons will have the reflection and transmission at each interface and the interference will determine the intensity profile. The emissive light reflected at the interfaces or the metallic electrode returns to the emissive layer and affects the radiation current efficiency. Microcavity OLED can produce saturated colors and narrow the emission spetrum as a new kind of technique. In the paper, we fabricate microcavity OLED using glass substrate. Ag film acts as the anode reflector mirror; NPB serves as the hole-transporting material; Alq3 is electron-transporting material and organic emissive material; Ag film acts as cathode reflector mirror. The microcavity OLED structures named as A, B, C and D are glass/Ag(15 nm)/MoO3 (x nm)/NPB(50 nm)/Alq3 (60 nm)/A1(100 nm). Here, A, x = 4 nm; B, x = 7 nm; C, x = 10 nm; D, x = 13 nm. The characteristic voltage, brightness and current of these devices are investigated in the electric field. The luminance from the Devices A, B, C and D reaches the luminance of 928, 1 369, 2 550 and 2 035 cd x m(-2), respectively at 13 V. At 60 mA x cm(-2), the current efficiency of the microcavity OLEDs using MnO3 are about 2.2, 2.6, 3.1 and 2.6 cd x A(-2) respectively. It is found that electrons are majority carriers and holes are minority carriers in this microcavity OLEDs. MnO3 film can improve hole injection ability from 4 to 10 nm. In addition, hole injection ability is increased with the increasing thickness of the MnO3 film.

A broadband LED source in visible to short-wave-infrared wavelengths for spectral tumor diagnostics

NASA Astrophysics Data System (ADS)

Hayashi, Daiyu; van Dongen, Anne Marie; Boerekamp, Jack; Spoor, Sandra; Lucassen, Gerald; Schleipen, Jean

2017-06-01

Various tumor types exhibit the spectral fingerprints in the absorption and reflection spectra in visible and especially in near- to short-wave-infrared wavelength ranges. For the purpose of spectral tumor diagnostics by means of diffuse reflectance spectroscopy, we developed a broadband light emitting diode (LED) source consisting of a blue LED for optical excitation, Lu3Al5O12:Ce3+,Cr3+ luminescent garnet for visible to near infrared emissions, and Bismuth doped GeO2 luminescent glass for near-infrared to short-wave infrared emissions. It emits broad-band light emissions continuously in 470-1600 nm with a spectral gap at 900-1000 nm. In comparison to the currently available broadband light sources like halogen lamps, high-pressure discharge lamps and super continuum lasers, the light sources of this paper has significant advantages for spectral tissue diagnostics in high-spectral stability, improved light coupling to optical fibers, potential in low light source cost and enabling battery-drive.

Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pargon, E.; Menguelti, K.; Martin, M.

2009-05-01

In this article, we have performed detailed investigations of the 193 nm photoresist transformations after exposure to the so-called HBr and Ar plasma cure treatments using various characterization techniques (x-ray photoelectron spectroscopy, Fourier transformed infrared, Raman analyses, and ellipsometry). By using windows with different cutoff wavelengths patched on the photoresist film, the role of the plasma vacuum ultraviolet (VUV) light on the resist modifications is clearly outlined and distinguished from the role of radicals and ions from the plasma. The analyses reveal that both plasma cure treatments induce severe surface and bulk chemical modifications of the resist films. The synergisticmore » effects of low energetic ion bombardment and VUV plasma light lead to surface graphitization or cross-linking (on the order of 10 nm), while the plasma VUV light (110-210 nm) is clearly identified as being responsible for ester and lactone group removal from the resist bulk. As the resist modification depth depends strongly on the wavelength penetration into the material, it is found that HBr plasma cure that emits near 160-170 nm can chemically modify the photoresist through its entire thickness (240 nm), while the impact of Ar plasmas emitting near 100 nm is more limited. In the case of HBr cure treatment, Raman and ellipsometry analyses reveal the formation of sp{sup 2} carbon atoms in the resist bulk, certainly thanks to hydrogen diffusion through the resist film assisted by the VUV plasma light.« less

Synthesis, energy transfer and luminescence properties of Ca{sub 2}MgWO{sub 6}:Sm{sup 3+}, Bi{sup 3+} phosphor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cao, Renping, E-mail: jxcrp@163.com; Xu, Haidong; Luo, Wenjie

Graphical abstract: PL spectra of Ca{sub 2}MgWO{sub 6}:Sm{sup 3+} and Ca{sub 2}MgWO{sub 6}:Sm{sup 3+}, Bi{sup 3+} phosphors with excitation at 407 nm, and the corresponding CIE chromaticity diagram and chromaticity coordinates. - Highlights: • Novel Ca{sub 2}MgWO{sub 6}:Sm{sup 3+}, Bi{sup 3+} phosphor is synthesized by solid-state reaction method in air. • Emission intensity of Ca{sub 2}MgWO{sub 6}:Sm{sup 3+} phosphor is enhanced ∼2 times after co-doped Bi{sup 3+} ion. • Charge compensation and energy transfer may be explained via luminescence properties. • Luminous mechanism is analyzed by energy level diagrams of WO{sub 6}{sup 6−} group, Sm{sup 3+} and Bi{sup 3+} ions.more » - Abstract: Novel Ca{sub 2}MgWO{sub 6}:Sm{sup 3+}, Bi{sup 3+} phosphor is synthesized by solid-state reaction method in air. Host Ca{sub 2}MgWO{sub 6} with excitation 300 nm emits blue light. Ca{sub 2}MgWO{sub 6}:Bi{sup 3+} phosphor with excitation 300 and 338 nm emits yellow light. Ca{sub 2}MgWO{sub 6}:Sm{sup 3+} phosphor with excitation 300 nm exhibits tunable emission from blue to red light by increasing Sm{sup 3+} doping concentration from 0 to 8 mol%, however, only emits red light with excitation 407 nm. Ca{sub 2}MgWO{sub 6}:Sm{sup 3+}, Bi{sup 3+} phosphor with excitation 300 and 338 nm emits red light. The optimal Sm{sup 3+} doping concentration is ∼5 mol% in Ca{sub 2}MgWO{sub 6}:Sm{sup 3+} phosphor. After Bi{sup 3+} ion is co-doped, luminescence properties of Ca{sub 2}MgWO{sub 6}:Sm{sup 3+} phosphor can be improved obviously because of Bi{sub 2}O{sub 3} as fluxing agent role and energy transfer from Bi{sup 3+} to Sm{sup 3+} ions. The possible luminous mechanism of Ca{sub 2}MgWO{sub 6}:Sm{sup 3+}, Bi{sup 3+} phosphor is analyzed and explained by simplified energy level diagrams of WO{sub 6}{sup 6−} group, Bi{sup 3+} and Sm{sup 3+} ions.« less

Photoluminescence properties of white light emitting La2O3:Dy3+ nanocrystals

NASA Astrophysics Data System (ADS)

Reenabati Devi, Konsam; Dorendrajit Singh, Shougaijam; David Singh, Th.

2018-06-01

White light emitting nanocrystalline La2O3:Dy3+ phosphors with different concentration (0.5-2 at.%) were synthesized by simple precipitation method. X-ray diffraction (XRD) pattern indicates all the samples crystallizes in the hexagonal phase. Average crystallite sizes of the samples calculated from XRD data were found to be in the range of 20-55 nm. Transmission electron microscopy, selected area electron diffraction, energy dispersive analysis of X-ray and photoluminescence (PL) of the samples are also reported. Strong PL excitation peak due to charge transfer band was observed at 230 nm. Photoluminescence emission peaks observed at 486 and 575 nm were probably attributed to 4F9/2-6H15/2 and 4F9/2-6H13/2 of Dy3+ ions respectively. Optimum luminescence intensity is found at 1 at.% Dy3+ doped La2O3 sample. Further, Commission Internationale de l'é clairage (CIE, 1931) co-ordinates and correlated color temperature (CCT) of the doped sample were calculated to investigate the phosphors' performance and technical applicability of the emitted light respectively. CCT of the 0.5 and 1 at.% samples is 5894 K (white light), within the range of vertical daylight, which makes the synthesised samples promising nanophosphor and may find application in simulating vertical daylight of the Sun.

Photoluminescence properties of white light emitting La2O3:Dy3+ nanocrystals

NASA Astrophysics Data System (ADS)

Reenabati Devi, Konsam; Dorendrajit Singh, Shougaijam; David Singh, Th.

2018-01-01

White light emitting nanocrystalline La2O3:Dy3+ phosphors with different concentration (0.5-2 at.%) were synthesized by simple precipitation method. X-ray diffraction (XRD) pattern indicates all the samples crystallizes in the hexagonal phase. Average crystallite sizes of the samples calculated from XRD data were found to be in the range of 20-55 nm. Transmission electron microscopy, selected area electron diffraction, energy dispersive analysis of X-ray and photoluminescence (PL) of the samples are also reported. Strong PL excitation peak due to charge transfer band was observed at 230 nm. Photoluminescence emission peaks observed at 486 and 575 nm were probably attributed to 4F9/2-6H15/2 and 4F9/2-6H13/2 of Dy3+ ions respectively. Optimum luminescence intensity is found at 1 at.% Dy3+ doped La2O3 sample. Further, Commission Internationale de l'é clairage (CIE, 1931) co-ordinates and correlated color temperature (CCT) of the doped sample were calculated to investigate the phosphors' performance and technical applicability of the emitted light respectively. CCT of the 0.5 and 1 at.% samples is 5894 K (white light), within the range of vertical daylight, which makes the synthesised samples promising nanophosphor and may find application in simulating vertical daylight of the Sun.

Exciplex formation and electroluminescent absorption in ultraviolet organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Qi; Zhang, Hao; Zhang, Xiao-Wen; Xu, Tao; Wei, Bin

2015-02-01

We investigated the formation of exciplex and electroluminescent absorption in ultraviolet organic light-emitting diodes (UV OLEDs) using different heterojunction structures. It is found that an energy barrier of over 0.3 eV between the emissive layer (EML) and adjacent transport layer facilitates exciplex formation. The electron blocking layer effectively confines electrons in the EML, which contributes to pure UV emission and enhances efficiency. The change in EML thickness generates tunable UV emission from 376 nm to 406 nm. In addition, the UV emission excites low-energy organic function layers and produces photoluminescent emission. In UV OLED, avoiding the exciplex formation and averting light absorption can effectively improve the purity and efficiency. A maximum external quantum efficiency of 1.2% with a UV emission peak of 376 nm is realized. Project supported by the National Natural Science Foundation of China (Grant Nos. 61136003 and 61275041) and the Guangxi Provincial Natural Science Foundation, China (Grant No. 2012GXNSFBA053168).

Enhanced light extraction from a GaN-based green light-emitting diode with hemicylindrical linear grating structure.

PubMed

Jin, Yuanhao; Yang, Fenglei; Li, Qunqing; Zhu, Zhendong; Zhu, Jun; Fan, Shoushan

2012-07-02

Significant enhancement in the light output from GaN-based green light-emitting diodes (LEDs) was achieved with a hemicylindrical grating structure on the top layer of the diodes. The grating structure was first optimized by the finite-difference time-domain (FDTD) method, which showed that the profile of the grating structure was critical for light extraction efficiency. It was found that the transmission efficiency of the 530 nm light emitted from the inside of the GaN LED increased for incidence angles between 23.58° and 60°. Such a structure was fabricated by electron-beam lithography and an etching method. The light output power from the LED was increased approximately 4.7 times compared with that from a conventional LED. The structure optimization is the key to the great increase in transmission efficiency. Furthermore, the light emitted from the edge of the LED units could be collected and extracted by the grating structures in adjacent LED units, thus enhancing the performance of the whole LED chip.

Ultraviolet laser ablation as technique for defect repair of GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Passow, Thorsten; Kunzer, Michael; Pfeuffer, Alexander; Binder, Michael; Wagner, Joachim

2018-03-01

Defect repair of GaN-based light-emitting diodes (LEDs) by ultraviolet laser micromachining is reported. Percussion and helical drilling in GaN by laser ablation were investigated using 248 nm nanosecond and 355 nm picosecond pulses. The influence of laser ablation including different laser parameters on electrical and optical properties of GaN-based LED chips was evaluated. The results for LEDs on sapphire with transparent conductive oxide p-type contact on top as well as for thin-film LEDs are reported. A reduction of leakage current by up to six orders in magnitude and homogeneous luminance distribution after proper laser defect treatment were achieved.

Magneto-electroluminescence effects in the single-layer organic light-emitting devices with macrocyclic aromatic hydrocarbons

NASA Astrophysics Data System (ADS)

Pham, S.-T.; Ikemoto, K.; Suzuki, K. Z.; Izumi, T.; Taka, H.; Kita, H.; Sato, S.; Isobe, H.; Mizukami, S.

2018-02-01

Magneto-electroluminescence (MEL) effects are observed in single-layer organic light-emitting devices (OLEDs) comprising only macrocyclic aromatic hydrocarbons (MAHs). The fluorescence devices were prepared using synthesized MAHs, namely, [n]cyclo-meta-phenylene ([n]CMP, n = 5, 6). The MEL ratio of the resulting OLED is 1%-2% in the spectral wavelength range of 400-500 nm, whereas it becomes negative (-1.5% to -2%) in the range from 650 to 700 nm. The possible physical origins of the sign change in the MEL are discussed. This wavelength-dependent sign change in the MEL ratio could be a unique function for future single-layer OLEDs capable of magnetic-field-induced color changes.

Embeded photonic crystal at the interface of p-GaN and Ag reflector to improve light extraction of GaN-based flip-chip light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhen, Aigong; Ma, Ping, E-mail: maping@semi.ac.cn; Zhang, Yonghui

2014-12-22

In this experiment, a flip-chip light-emitting diode with photonic crystal was fabricated at the interface of p-GaN and Ag reflector via nanospheres lithography technique. In this structure, photonic crystal could couple with the guide-light efficiently by reason of the little distance between photonic crystal and active region. The light output power of light emitting diode with embedded photonic crystal was 1.42 times larger than that of planar flip-chip light-emitting diode. Moreover, the embedded photonic crystal structure makes the far-field divergence angle decreased by 18° without spectra shift. The three-dimensional finite difference time domain simulation results show that photonic crystal couldmore » improve the light extraction, and enhance the light absorption caused by Ag reflector simultaneously, because of the roughed surface. The depth of photonic crystal is the key parameter affecting the light extraction and absorption. Light extraction efficiency increases with the depth photonic crystal structure rapidly, and reaches the maximum at the depth 80 nm, beyond which light extraction decrease drastically.« less

Benzoporphyrin derivative and light-emitting diode for use in photodynamic therapy: Applications of space light-emitting diode technology

NASA Astrophysics Data System (ADS)

Whelan, Harry T.; Houle, John M.; Bajic, Dawn M.; Schmidt, Meic H.; Reichert, Kenneth W.; Meyer, Glenn A.

1998-01-01

Photodynamic therapy (PDT) is a cancer treatment modality that recently has been applied as adjuvant therapy for brain tumors. PDT consists of intravenously injecting a photosensitizer, which preferentially accumulates in tumor cells, into a patient and then activating the photosensitizer with a light source. This results in free radical generation followed by cell death. The development of more effective light sources for PDT of brain tumors has been facilitated by applications of space light-emitting diode array technology; thus permitting deeper tumor penetration of light and use of better photosensitizers. Currently, the most commonly used photosensitizer for brain tumor PDT is Photofrin®. Photofrin® is a heterogeneous mixture of compounds derived from hematoporphyrin. Photofrin® is activated with a 630 nm laser light and does destroy tumor cells in animal models and humans. However, treatment failure does occur using this method. Most investigators attribute this failure to the limited penetration of brain tissue by a 630 nm laser light and to the fact that Photofrin® has only a minor absorption peak at 630 nm, meaning that only a small fraction of the chemical is activated. Benzoporphyrin Derivative Monoacid Ring A (BPD) is a new, second generation photosensitizer that can potentially improve PDT for brain tumors. BPD has a major absorption peak at 690 nm, which gives it two distinct advantages over Photofrin®. First, longer wavelengths of light penetrate brain tissue more easily so that larger tumors could be treated, and second, the major absorption peak means that a larger fraction of the drug is activated upon exposure to light. In the first part of this project we have studied the tumoricidal effects of BPD in vitro using 2A9 canine glioma and U373 human glioblastoma cell cultures. Using light emitting diodes (LED) with a peak emission of 688 nm as a light source, cell kill of up to 86 percent was measured in these cell lines by tumor DNA synthesis reduction. The effectiveness of BPD against tumor cells in vitro thus established, we have taken the first step toward determining its effectiveness in vivo. The second part of this project consisted of experiments performed to determine the maximum tolerated dose (MTD) of both BPD and LED light. At a light dose of 100 J/cm2, skin damage and neurotoxicity were seen at a BPD dose of 1.0 mg/kg, but not at a dose of 0.75 mg/kg. When BPD remained constant at 0.75 mg/kg, skin damage was seen at light dosages of 125 J/cm2, 150 J/cm2 and 175 J/cm2. One dog also died at a light dose of 175 J/cm2. Further studies will be needed to determine the effectiveness of BPD against tumor cells in vivo.

Synchronization of 1064 and 1319 nm Pulses Emitted from Actively Mode-Locked Nd:YAG Lasers and Its Application to 589 nm Sum-Frequency Generation

NASA Astrophysics Data System (ADS)

Saito, Norihito; Akagawa, Kazuyuki; Hayano, Yutaka; Saito, Yoshihiko; Takami, Hideki; Iye, Masanori; Wada, Satoshi

2005-11-01

Sum-frequency generation was carried out by mixing 1064 and 1319 nm pulses emitted from actively mode-locked neodymium-doped yttrium aluminum garnet (Nd:YAG) lasers for efficient 589 nm light generation. A radio frequency of approximately 75 MHz was split into two and fed to acousto-optic mode lockers of two lasers for mode-locked operation. The synchronization of the pulses was achieved by controlling the phase difference between the radio frequencies. The maximum output power at 589 nm reached 260 mW, which corresponded to an energy conversion efficiency of more than 13%. The output power was 3.8-fold that in continuous-wave operation.

The photocatalytic degradation of methylene blue by green semiconductor films that is induced by irradiation by a light-emitting diode and visible light.

PubMed

Yang, Chih-Chi; Doong, Ruey-An; Chen, Ku-Fan; Chen, Giin-Shan; Tsai, Yung-Pin

2018-01-01

This study develops a low-energy rotating photocatalytic contactor (LE-RPC) that has Cu-doped TiO 2 films coated on stainless-steel rotating disks, to experimentally evaluate the efficiency of the degradation and decolorization of methylene blue (MB) under irradiation from different light sources (visible 430 nm, light-emitting diode [LED] 460 nm, and LED 525 nm). The production of hydroxyl radicals is also examined. The experimental results show that the photocatalytic activity of TiO 2 that is doped with Cu 2+ is induced by illumination with visible light and an LED. More than 90% of methylene blue at a 10 mg/L concentration is degraded after illumination by visible light (430 nm) for 4 hr at 20 rpm. This study also demonstrates that the quantity of hydroxyl radicals produced is directly proportional to the light energy intensity. The greater the light energy intensity, the greater is the number of hydroxyl radicals produced. The CuO-doped anatase TiO 2 powder was successfully synthesized in this study by a sol-gel method. The catalytic abilities of the stainless-steel film were enhanced in the visible light regions. This study has successfully modified the nano-photocatalytic materials to drop band gap and has also successfully fixed the nano-photocatalytic materials on a substratum to effectively treat dye wastewater in the range of visible light. The results can be useful to the development of a low-energy rotating photocatalytic contactor for decontamination purposes.

Low-Cost Charged-Coupled Device (CCD) Based Detectors for Shiga Toxins Activity Analysis.

PubMed

Rasooly, Reuven; Prickril, Ben; Bruck, Hugh A; Rasooly, Avraham

2017-01-01

To improve food safety there is a need to develop simple, low-cost sensitive devices for detection of food-borne pathogens and their toxins. We describe a simple, low-cost webcam-based detector which can be used for various optical detection modalities, including fluorescence, chemiluminescence, densitometry, and colorimetric assays. The portable battery-operated CCD-based detection system consists of four modules: (1) a webcam to measure and record light emission, (2) a sample plate to perform assays, (3) a light emitting diode (LED) for illumination, and (4) a portable computer to acquire and analyze images. To demonstrate the technology, we used a cell based assay for fluorescence detection of the activity of the food borne Shiga toxin type 2 (Stx2), differentiating between biologically active toxin and inactive toxin which is not a risk. The assay is based on Shiga toxin inhibition of cell protein synthesis measured through inhibition of the green fluorescent protein (GFP). In this assay, GFP emits light at 509 nm when excited with a blue LED equipped with a filter at 486 nm. The emitted light is then detected with a green filter at 535 nm. Toxin activity is measured through a reduction in the 509 nm emission. In this system the level of detection (LOD) for Stx2 was 0.1 pg/ml, similar to the LOD of commercial fluorometers. These results demonstrate the utility and potential of low cost detectors for toxin activity. This approach could be readily adapted to the detection of other food-borne toxins.

Adjunctive 830 nm light-emitting diode therapy can improve the results following aesthetic procedures.

PubMed

Calderhead, R Glen; Kim, Won-Serk; Ohshiro, Toshio; Trelles, Mario A; Vasily, David B

2015-12-30

Aggressive, or even minimally aggressive, aesthetic interventions are almost inevitably followed by such events as discomfort, erythema, edema and hematoma formation which could lengthen patient downtime and represent a major problem to the surgeon. Recently, low level light therapy with light-emitting diodes (LED-LLLT) at 830 nm has attracted attention in wound healing indications for its anti-inflammatory effects and control of erythema, edema and bruising. The wavelength of 830 nm offers deep penetration into living biological tissue, including bone. A new-generation of 830 nm LEDs, based on those developed in the NASA Space Medicine Laboratory, has enabled the construction of planar array-based LED-LLLT systems with clinically useful irradiances. Irradiation with 830 nm energy has been shown in vitro and in vivo to increase the action potential of epidermal and dermal cells significantly. The response of the inflammatory stage cells is enhanced both in terms of function and trophic factor release, and fibroblasts demonstrate superior collagenesis and elastinogenesis. A growing body of clinical evidence is showing that applying 830 nm LED-LLLT as soon as possible post-procedure, both invasive and noninvasive, successfully hastens the resolution of sequelae associated with patient downtime in addition to significantly speeding up frank wound healing. This article reviews that evidence, and attempts to show that 830 nm LED-LLLT delivers swift resolution of postoperative sequelae, minimizes downtime and enhances patient satisfaction.

Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

NASA Astrophysics Data System (ADS)

Halim, N. Syafira Abdul; Wahid, M. Halim A.; Hambali, N. Azura M. Ahmad; Rashid, Shanise; Shahimin, Mukhzeer M.

2017-11-01

Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.

Photoluminescence properties of a new orange–red emitting Sm{sup 3+}-doped Y{sub 2}Mo{sub 4}O{sub 15} phosphor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deng, Huajuan; Zhao, Ze; Wang, Jing

2015-08-15

A series of novel Y{sub 2}Mo{sub 4}O{sub 15}:xSm{sup 3+} ( (0.01 ≤ x ≤ 0.20) phosphors for white light-emitting (W-LEDs) were successfully prepared by the solid state reaction technology at 973 K for 12 h. X-ray diffraction and photoluminescence spectra were utilized to characterize the structure and luminescence properties of the as-synthesized phosphors. The emission spectra of the Y{sub 2}Mo{sub 4}O{sub 15}:Sm{sup 3+} phosphors consisted of some sharp emission peaks of Sm{sup 3+} ions centered at 565 nm, 605 nm, 650 nm, and 712 nm. The strongest one is located at 605 nm due to {sup 4}G{sub 5/2}–{sup 6}H{sub 7/2}more » transition of Sm{sup 3+}, generating bright orange–red light. The optimum dopant concentration of Sm{sup 3+} ions in Y{sub 2}Mo{sub 4}O{sub 15}:xSm{sup 3+} is around 5 mol% and the critical transfer distance of Sm{sup 3+} is calculated as 23.32 Å. The CIE chromaticity coordinates of the Y{sub 2}Mo{sub 4}O{sub 15}:0.05Sm{sup 3+} phosphors were located in the orange reddish region. The Y{sub 2}Mo{sub 4}O{sub 15}:Sm{sup 3+} phosphors may be potentially used as red phosphors for white light-emitting diodes. - Graphical abstract: The excitation spectrum of Y{sub 2}Mo{sub 4}O{sub 15}:Sm{sup 3+} is composed of a broad band and some sharp f–f transitions. Under 407 nm excitation, the phosphor presents some sharp emission peaks of Sm{sup 3+} ions. - Highlights: • An orange–red emitting Y{sub 2}Mo{sub 4}O{sub 15}:Sm{sup 3+} phosphor has been firstly synthesized. • Their structures, luminescent properties have also been investigated. • The optical absorption edge for the molybdate lies around 325 nm. • The CIE chromaticity coordinates were located in the orange reddish region.« less

Novel yellow-emitting Sr8MgLn(PO4)7:Eu2+ (Ln=Y, La) phosphors for applications in white LEDs with excellent color rendering index.

PubMed

Huang, Chien-Hao; Chen, Teng-Ming

2011-06-20

Eu(2+)-activated Sr(8)MgY(PO(4))(7) and Sr(8)MgLa(PO(4))(7) yellow-emitting phosphors were successfully synthesized by solid-state reactions for applications in excellent color rendering index white light-emitting diodes (LEDs). The excitation and reflectance spectra of these phosphors show broad band excitation and absorption in the 250-450 nm near-ultraviolet region, which is ascribed to the 4f(7) → 4f(6)5d(1) transitions of Eu(2+). Therefore, these phosphors meet the application requirements for near-UV LED chips. Upon excitation at 400 nm, the Sr(8)MgY(PO(4))(7):Eu(2+) and Sr(8)MgLa(PO(4))(7):Eu(2+) phosphors exhibit strong yellow emissions centered at 518, 610, and 611 nm with better thermal stability than (Ba,Sr)(2)SiO(4) (570 nm) commodity phosphors. The composition-optimized concentrations of Eu(2+) in Sr(8)MgLa(PO(4))(7):Eu(2+) and Sr(8)MgY(PO(4))(7):Eu(2+) phosphors were determined to be 0.01 and 0.03 mol, respectively. A warm white-light near-UV LED was fabricated using a near-UV 400 nm chip pumped by a phosphor blend of blue-emitting BaMgAl(10)O(17):Eu(2+) and yellow-emitting Sr(8)MgY(PO(4))(7):0.01Eu(2+) or Sr(8)MgLa(PO(4))(7):0.03Eu(2+), driven by a 350 mA current. The Sr(8)MgY(PO(4))(7):0.01Eu(2+) and Sr(8)MgLa(PO(4))(7):0.03Eu(2+) containing LEDs produced a white light with Commission International de I'Eclairage (CIE) chromaticity coordinates of (0.348, 0.357) and (0.365, 0.328), warm correlated color temperatures of 4705 and 4100 K, and excellent color rendering indices of 95.375 and 91.75, respectively. © 2011 American Chemical Society

Estimation of soft X-ray and EUV transition radiation power emitted from the MIRRORCLE-type tabletop synchrotron.

PubMed

Toyosugi, N; Yamada, H; Minkov, D; Morita, M; Yamaguchi, T; Imai, S

2007-03-01

The tabletop synchrotron light sources MIRRORCLE-6X and MIRRORCLE-20SX, operating at electron energies E(el) = 6 MeV and E(el) = 20 MeV, respectively, can emit powerful transition radiation (TR) in the extreme ultraviolet (EUV) and the soft X-ray regions. To clarify the applicability of these soft X-ray and EUV sources, the total TR power has been determined. A TR experiment was performed using a 385 nm-thick Al foil target in MIRRORCLE-6X. The angular distribution of the emitted power was measured using a detector assembly based on an NE102 scintillator, an optical bundle and a photomultiplier. The maximal measured total TR power for MIRRORCLE-6X is P(max) approximately equal 2.95 mW at full power operation. Introduction of an analytical expression for the lifetime of the electron beam allows calculation of the emitted TR power by a tabletop synchrotron light source. Using the above measurement result, and the theoretically determined ratio between the TR power for MIRRORCLE-6X and MIRRORCLE-20SX, the total TR power for MIRRORCLE-20SX can be obtained. The one-foil TR target thickness is optimized for the 20 MeV electron energy. P(max) approximately equal 810 mW for MIRRORCLE-20SX is obtained with a single foil of 240 nm-thick Be target. The emitted bremsstrahlung is negligible with respect to the emitted TR for optimized TR targets. From a theoretically known TR spectrum it is concluded that MIRRORCLE-20SX can emit 150 mW of photons with E > 500 eV, which makes it applicable as a source for performing X-ray lithography. The average wavelength, \\overline\\lambda = 13.6 nm, of the TR emission of MIRRORCLE-20SX, with a 200 nm Al target, could provide of the order of 1 W EUV.

Amber light-emitting diode comprising a group III-nitride nanowire active region

DOEpatents

Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

2014-07-22

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

Simultaneous multi-wavelength ultraviolet excited single-phase white light emitting phosphor Ba1-x(Zr,Ti)Si3O9:xEu

NASA Astrophysics Data System (ADS)

Zhou, Zhenzhen; Liu, Guanghui; Ni, Jia; Liu, Wanlu; Liu, Qian

2018-05-01

A kind of novel compound Ba1-x(Zr,Ti)Si3O9:xEu simultaneously activated by different-valence Eu2+ and Eu3+ ions has been successfully synthesized. The existence of Ti4+-O2- charge transfer (CT) transitions in Ba1-xZrSi3O9:xEu is proved by the photoluminescence spectra and first principle calculations, and the Ti4+ ions come from the impurities in commercial ZrO2 raw materials. Under the excitation of multi-wavelength ultraviolet radiation (λEX = 392, 260, 180 nm), Ba1-xZrSi3O9:xEu (x = 0.15) can directly emit nearly white light. The coexistence of multiple luminescent centers and the energy transfer among Zr4+-O2- CT state, Ti4+-O2- CT state, Eu2+ and Eu3+ ions play important roles in the white light emission. Ba1-xZrSi3O9:xEu (x = 0.15) has good thermal stability, in particular, the intensity of emission spectrum (λEX = 392 nm) at 150 °C is ∼96% of that at room temperature. In general, the multi-wavelength ultraviolet-excited single-phase white light emitting phosphor Ba1-x(Zr,Ti)Si3O9:xEu possesses a promise for applications in white light emitting diodes (WLEDs), agriculture, medicine and other photonic fields.

Efficient Green Emission from Wurtzite Al xIn1- xP Nanowires.

PubMed

Gagliano, L; Kruijsse, M; Schefold, J D D; Belabbes, A; Verheijen, M A; Meuret, S; Koelling, S; Polman, A; Bechstedt, F; Haverkort, J E M; Bakkers, E P A M

2018-06-13

Direct band gap III-V semiconductors, emitting efficiently in the amber-green region of the visible spectrum, are still missing, causing loss in efficiency in light emitting diodes operating in this region, a phenomenon known as the "green gap". Novel geometries and crystal symmetries however show strong promise in overcoming this limit. Here we develop a novel material system, consisting of wurtzite Al x In 1- x P nanowires, which is predicted to have a direct band gap in the green region. The nanowires are grown with selective area metalorganic vapor phase epitaxy and show wurtzite crystal purity from transmission electron microscopy. We show strong light emission at room temperature between the near-infrared 875 nm (1.42 eV) and the "pure green" 555 nm (2.23 eV). We investigate the band structure of wurtzite Al x In 1- x P using time-resolved and temperature-dependent photoluminescence measurements and compare the experimental results with density functional theory simulations, obtaining excellent agreement. Our work paves the way for high-efficiency green light emitting diodes based on wurtzite III-phosphide nanowires.

Semi-transparent all-oxide ultraviolet light-emitting diodes based on ZnO/NiO-core/shell nanowires

NASA Astrophysics Data System (ADS)

Shi, Zhi-Feng; Xu, Ting-Ting; Wu, Di; Zhang, Yuan-Tao; Zhang, Bao-Lin; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

2016-05-01

Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores.Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07236k

Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction

NASA Astrophysics Data System (ADS)

Yonkee, B. P.; Young, E. C.; DenBaars, S. P.; Nakamura, S.; Speck, J. S.

2016-11-01

A molecular beam epitaxy regrowth technique was demonstrated on standard industrial patterned sapphire substrate light-emitting diode (LED) epitaxial wafers emitting at 455 nm to form a GaN tunnel junction. By using an HF pretreatment on the wafers before regrowth, a voltage of 3.08 V at 20 A/cm2 was achieved on small area devices. A high extraction package was developed for comparison with flip chip devices which utilize an LED floating in silicone over a BaSO4 coated header and produced a peak external quantum efficiency (EQE) of 78%. A high reflectivity mirror was designed using a seven-layer dielectric coating backed by aluminum which has a calculated angular averaged reflectivity over 98% between 400 and 500 nm. This was utilized to fabricate a flip chip LED which had a peak EQE and wall plug efficiency of 76% and 73%, respectively. This flip chip could increase light extraction over a traditional flip chip LED due to the increased reflectivity of the dielectric based mirror.

Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO2 nanocomposite light-emitting devices.

PubMed

Chen, Jiun-Ting; Lai, Wei-Chih; Chen, Chi-Heng; Yang, Ya-Yu; Sheu, Jinn-Kong; Lai, Li-Wen

2011-06-06

We have demonstrated the electroluminescence (EL) of Ga:ZnO/i-ZnO-SiO2 nanocomposite/p-GaN n-i-p heterostructure light-emitting devices (LEDs). ZnO nano-clusters with sizes distributing from 2 to 7nm were found inside the co-sputtered i-ZnO-SiO2 nanocomposite layer under the observation of high-resolution transparent electron microscope. A clear UV EL at 376 nm from i-ZnO-SiO2 nanocomposite in these p-i-n heterostructure LEDs was observed under the forward current of 9 mA. The EL emission peak at 376 and 427nm of the Ga:ZnO/i-ZnO-SiO2 nanocomposite/p-GaN n-i-p heterostructure LEDs were attributed to the radiative recombination from the ZnO clusters and the Mg acceptor levels in the p-GaN layer, respectively.

5.5nm wavelength-tunable high-power MOPA diode laser system at 971 nm

NASA Astrophysics Data System (ADS)

Tawfieq, Mahmoud; Müller, André; Fricke, Jörg; Della Casa, Pietro; Ressel, Peter; Ginolas, Arnim; Feise, David; Sumpf, Bernd; Tränkle, Günther

2018-02-01

In this work, a widely tunable hybrid master oscillator power amplifier (MOPA) diode laser with 6.2 W of output power at 971.8 nm will be presented. The MO is a DBR laser, with a micro heater embedded on top of the DBR grating for wavelength tunability. The emitted light of the MO is collimated and coupled into a tapered amplifier using micro cylindrical lenses, all constructed on a compact 25 mm × 25 mm conduction cooled laser package. The MOPA system emits light with a measured spectral width smaller than 17 pm, limited by the spectrometer, and with a beam propagation factor of M2 1/e2 = 1.3 in the slow axis. The emission is thus nearly diffraction limited with 79% of the total power within the central lobe (4.9 W diffraction limited). The electrically controlled micro-heater provides up to 5.5 nm of wavelength tunability, up to a wavelength of 977.3 nm, while maintaining an output power variation of only +/- 0.16 % for the entire tuning range.

Ultraviolet electroluminescence from hybrid inorganic/organic ZnO/GaN/poly(3-hexylthiophene) dual heterojunctions.

PubMed

Chen, Yungting; Shih, Hanyu; Wang, Chunhsiung; Hsieh, Chunyi; Chen, Chihwei; Chen, Yangfang; Lin, Taiyuan

2011-05-09

Based on hybrid inorganic/organic n-ZnO nanorods/p-GaN thin film/poly(3-hexylthiophene)(P3HT) dual heterojunctions, the light emitting diode (LED) emits ultraviolet (UV) radiation (370 nm - 400 nm) and the whole visible light (400 nm -700 nm) at the low injection current density. Meanwhile, under the high injection current density, the UV radiation overwhelmingly dominates the room-temperature electroluminescence spectra, exponentially increases with the injection current density and possesses a narrow full width at half maximum less than 16 nm. Comparing electroluminescence with photoluminescence spectra, an enormously enhanced transition probability of the UV luminescence in the electroluminescence spectra was found. The P3HT layer plays an essential role in helping the UV emission from p-GaN material because of its hole-conductive characteristic as well as the band alignment with respect to p-GaN. With our new finding, the result shown here may pave a new route for the development of high brightness LEDs derived from hybrid inorganic/organic heterojuctions.

The possible ocular hazards of LED dental illumination applications.

PubMed

Stamatacos, Catherine; Harrison, Janet L

2014-04-01

The use of high-intensity illumination via Light-Emitting Diode (LED) headlamps is gaining in popularity with dentists and student dentists. Practitioners are using LED headlamps together with magnifying loupes, overhead LED illumination and fiber-optic dental handpieces for long periods of time. Although most manufacturers of these LED illuminators advertise that their devices emit "white" light, these still consist of two spectral bands - the blue spectral band, with its peak at 445 nm, and the green with its peak at 555 nm. While manufacturers suggest that their devices emit "white" light, spectral components of LED lights from different companies are significantly different. Dental headlamp manufacturers strive to create a white LED, and they advertise that this type of light emitted from their product offers bright white-light illumination. However, the manufacturing of a white LED light is done through selection of a white LED-type based on the peak blue strength in combination with the green peak strength and thus creating a beam-forming optic, which determines the beam quality. Some LED illuminators have a strong blue-light component versus the green-light component. Blue-light is highly energized and is close in the color spectrum to ultraviolet-light. The hazards of retinal damage with the use of high-intensity blue-lights has been well-documented. There is limited research regarding the possible ocular hazards of usage of high-intensity illuminating LED devices. Furthermore, the authors have found little research, standards, or guidelines examining the possible safety issues regarding the unique dental practice setting consisting of the combined use of LED illumination systems. Another unexamined component is the effect of high-intensity light reflective glare and magnification back to the practitioner's eyes due to the use of water during dental procedures. Based on the result of Dr. Janet Harrison's observations of beginning dental students in a laboratory setting, the aim of this review is to raise awareness of the potential risk for eye damage when singular or combinations of LED illumination are used.

The possible ocular hazards of LED dental illumination applications.

PubMed

Stamatacos, Catherine; Harrison, Janet L

2013-01-01

The use of high-intensity illumination via Light-Emitting Diode (LED) headlamps is gaining in popularity with dentists and student dentists. Practitioners are using LED headlamps together with magnifying loupes, overhead LED illumination and fiber-optic dental handpieces for long periods of time. Although most manufacturers of these LED illuminators advertise that their devices emit "white" light, these still consist of two spectral bands--the blue spectral band, with its peak at 445 nm, and the green with its peak at 555 nm. While manufacturers suggest that their devices emit "white" light, spectral components of LED lights from different companies are significantly different. Dental headlamp manufacturers strive to create a white LED, and they advertise that this type of light emitted from their product offers bright white-light illumination. However, the manufacturing of a white LED light is done through selection of a white LED-type based on the peak blue strength in combination with the green peak strength and thus creating a beam-forming optic, which determines the beam quality. Some LED illuminators have a strong blue-light component versus the green-light component. Blue-light is highly energized and is close in the color spectrum to ultraviolet-light. The hazards of retinal damage with the use of high-intensity blue-lights has been well-documented. There is limited research regarding the possible ocular hazards of usage of high-intensity illuminating LED devices. Furthermore, the authors have found little research, standards, or guidelines examining the possible safety issues regarding the unique dental practice setting consisting of the combined use of LED illumination systems. Another unexamined component is the effect of high-intensity light reflective glare and magnification back to the practitioner's eyes due to the use of water during dental procedures. Based on the result of Dr. Janet Harrison's observations of beginning dental students in a laboratory setting, the aim of this review is to raise awareness of the potential risk for eye damage when singular or combinations of LED illumination are used.

[The spectrogram characteristics of organic blue-emissive light-emitting excitated YAG : Ce phosphor].

PubMed

Xi, Jian-Fei; Zhang, Fang-Hui; Mu, Qiang; Zhang, Mai-Li

2011-09-01

It is demonstrated that the panchromatic luminescence devices with organic blue-emissive light-emitting was fabricated. This technique used down conversion, which was already popular in inorganic power LEDs to obtain white light emission. A blue OLED device with a configuration of ITO/2T-NATA (30 nm)/AND : TBPe (50 Wt%, 40 nm)/Alq3 (100 nm)/LiF(1 nm)/Al(100 nm) was prepared via vacuum deposition process, and then coated with YAG : Ce phosphor layers of different thicknesses to obtain a controllable and uniform shape while the CIE coordinates were fine tuned. This development not only decreased steps of technics and degree of difficulty, but also applied the mature technology of phosphor. The results showed that steady spectrogram was obtained in the devices with phosphor, with a best performance of a maximum luminance of 13 840 cd x m(-2) which was about 2 times of that of the devices without phosphor; a maximum current efficiency of 17.3 cd x A(-1) was increased more two times more than the devices without phosphor. The emission spectrum could be adjusted by varying the concentration and thickness of the phosphor layers. Absoulte spectrogram of devices was in direct proportion with different driving current corresponding.

Effect of sintering temperature of Ce3+-doped Lu3Al5O12 phosphors on light emission and properties of crystal structure for white-light-emitting diodes

NASA Astrophysics Data System (ADS)

Koizumi, Hiroshi; Watabe, Junya; Sugiyama, Shin; Hirabayashi, Hideaki; Homma, Tetsuya

2018-06-01

The effect of the sintering temperature of Ce3+-doped Lu3Al5O12 (Ce-LuAG) phosphors on the emission and properties of the crystal structure was studied. A cathodoluminescence peak at 317 nm, which was assigned to lattice defects, was exhibited in addition to emission peaks at 508 and 540 nm for the Ce-LuAG phosphors. The intensities of the 317 nm emission peak for the phosphors with mean particle diameters of 5.0 and 10.0 µm formed at a low sintering temperature of 1430 °C were higher than those for the phosphors with mean particle diameters of 18.0 and 20.5 µm formed at a high sintering temperature of 1550 °C. In contrast, the electroluminescence spectra for fabricated white-light-emitting diodes (LEDs) using the phosphors revealed that the intensity of the peak at 540 nm was strong for the mean particle diameters of 18.0 and 20.5 µm. The intensity of the 540 nm peak, which is attributed to the 4f→5d transition of the Ce3+ activator, showed a dependence on the sintering temperature. The relationship between the optical properties and the lattice defects is discussed.

UV excited downconversion luminescence properties of Eu3+: NaZnPO4 phosphors

NASA Astrophysics Data System (ADS)

Mukhopadhyay, Lakshmi; Rai, Vineet Kumar

2018-05-01

The structural and optical properties of Eu3+: NaZnPO4 phosphors prepared by chemical coprecipitation method have been studied. The phase formation and morphology of the phosphors have been confirmed by the X-ray diffraction (XRD) and Field emission scanning electron microscopy (FESEM) analysis. The downconversion emission spectra upon 392 nm excitation exhibit five emission bands centred at ˜ 575 nm, ˜ 590 nm, ˜ 612 nm, ˜ 660 nm and ˜ 702 nm corresponding to the 5D0→7F0, 5D0→7F1, 5D0→7F2, 5D0→7F3 and 5D0→7F4 transitions of Eu3+ ions respectively. The observed downconversion emission peaks can be explained with the help of suitable energy level diagram. The CIE chromaticity diagram shows the purity of the emitted colour from the prepared phosphors. The present phosphors emit in intense red region which shows the applicability of the phosphors in red light emitting display devices.

276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Hwang, Seongmo; Morgan, Daniel; Kesler, Amanda; Lachab, Mohamed; Zhang, Bin; Heidari, Ahmad; Nazir, Haseeb; Ahmad, Iftikhar; Dion, Joe; Fareed, Qhalid; Adivarahan, Vinod; Islam, Monirul; Khan, Asif

2011-03-01

Lateral-conduction, substrate-free flip-chip (SFFC) light-emitting diodes (LEDs) with peak emission at 276 nm are demonstrated for the first time. The AlGaN multiple quantum well LED structures were grown by metal-organic chemical vapor deposition (MOCVD) on thick-AlN laterally overgrown on sapphire substrates. To fabricate the SFFC LEDs, a newly-developed laser-assisted ablation process was employed to separate the substrate from the LED chips. The chips had physical dimensions of 1100×900 µm2, and were comprised of four devices each with a 100×100 µm2 junction area. Electrical and optical characterization of the devices revealed no noticeable degradation to their performance due to the laser-lift-off process.

III-N light emitting diodes fabricated using RF nitrogen gas source MBE

NASA Astrophysics Data System (ADS)

Van Hove, J. M.; Carpenter, G.; Nelson, E.; Wowchak, A.; Chow, P. P.

1996-07-01

Homo- and heterojunction III-N light emitting diodes using RF atomic nitrogen plasma molecular beam epitaxy have been grown. GaN films deposited on sapphire using this growth technique exhibited an extremely sharp X-ray diffraction with a full width half maximum of 112 arc sec. p-type doping of the nitride films was done with elemental Mg and resulted in as-grown p-type material with resistivities as low as 2 Ω · cm. Both homo- and heterojunction LEDs showed clear rectification. Emission from the GaN homojunction deposited on n-type SiC was peaked at 410 nm while the AlGaNGaN(Zn)AlGaN double heterojunction LEDs emission was centered about 520 nm.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shamirzaev, V. T., E-mail: tim@isp.nsc.ru; Gaisler, V. A.; Shamirzaev, T. S.

The spectrum of ultraviolet (UV) InGaN/GaN light-emitting diodes and its dependence on the current flowing through the structure are studied. The intensity of the UV contribution to the integrated diode luminescence increases steadily with increasing density of current flowing through the structure, despite a drop in the emission quantum efficiency. The electroluminescence excitation conditions that allow the fraction of UV emission to be increased to 97% are established. It is shown that the nonuniform generation of extended defects, which penetrate the active region of the light-emitting diodes as the structures degrade upon local current overheating, reduces the integrated emission intensitymore » but does not affect the relative intensity of diode emission in the UV (370 nm) and visible (550 nm) spectral ranges.« less

Nitrogen-polar core-shell GaN light-emitting diodes grown by selective area metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Li, Shunfeng; Wang, Xue; Fündling, Sönke; Erenburg, Milena; Ledig, Johannes; Wei, Jiandong; Wehmann, Hergo H.; Waag, Andreas; Bergbauer, Werner; Mandl, Martin; Strassburg, Martin; Trampert, Achim; Jahn, Uwe; Riechert, Henning; Jönen, Holger; Hangleiter, Andreas

2012-07-01

Homogeneous nitrogen-polar GaN core-shell light emitting diode (LED) arrays were fabricated by selective area growth on patterned substrates. Transmission electron microscopy measurements prove the core-shell structure of the rod LEDs. Depending on the growth facets, the InGaN/GaN multi-quantum wells (MQWs) show different dimensions and morphology. Cathodoluminescence (CL) measurements reveal a MQWs emission centered at about 415 nm on sidewalls and another emission at 460 nm from top surfaces. CL line scans on cleaved rod also indicate the core-shell morphology. Finally, an internal quantum efficiency of about 28% at room temperature was determined by an all-optical method on a LED array.

Green-light-emitting electroluminescent device based on a new cadmium complex

NASA Astrophysics Data System (ADS)

Kumar, Rahul; Srivastava, Ritu; Kumar, Akshay; Kamalasanan, M. N.; Singh, K.

2010-06-01

A new cadmium complex is synthesized to investigate its stability and applicability for a luminescent device. The as-prepared Cd(Bpy)q sample is characterized by Fourier-transformed infra-red spectroscopy (FTIR), thermal gravimetric analyzer (TGA) and photoluminescence (PL). The prepared sample shows excellent thermal stability up to 380 °C. A maximum is observed at 240 nm in absorption spectra which is attributed to the π-π* transition. An organic-light-emitting diode (OLED) has been fabricated using this material. The fundamental structures of the device exhibit ITO/α-NPD/Cd(Bpy)q/BCP/Alq3/LiF/Al. The electroluminescence (EL) device emits bright green light with maximum luminescence 1683 cd/m2 at 20 V.

GaN-Based Light-Emitting Diodes Grown on Nanoscale Patterned Sapphire Substrates with Void-Embedded Cortex-Like Nanostructures

NASA Astrophysics Data System (ADS)

Lin, Yu-Sheng; Yeh, J. Andrew

2011-09-01

High-efficiency GaN-based light-emitting diodes (LEDs) with an emitting wavelength of 438 nm were demonstrated utilizing nanoscale patterned sapphire substrates with void-embedded cortex-like nanostructures (NPSS-VECN). Unlike the previous nanopatterned sapphire substrates, the presented substrate has a new morphology that can not only improve the crystalline quality of GaN epilayers but also generate a void-embedded nanostructural layer to enhance light extraction. Under a driving current of 20 mA, the external quantum efficiency of an LED with NPSS-VECN is enhanced by 2.4-fold compared with that of the conventional LED. Moreover, the output powers of two devices respectively are 33.1 and 13.9 mW.

Rosin-enabled ultraclean and damage-free transfer of graphene for large-area flexible organic light-emitting diodes

PubMed Central

Zhang, Zhikun; Du, Jinhong; Zhang, Dingdong; Sun, Hengda; Yin, Lichang; Ma, Laipeng; Chen, Jiangshan; Ma, Dongge; Cheng, Hui-Ming; Ren, Wencai

2017-01-01

The large polymer particle residue generated during the transfer process of graphene grown by chemical vapour deposition is a critical issue that limits its use in large-area thin-film devices such as organic light-emitting diodes. The available lighting areas of the graphene-based organic light-emitting diodes reported so far are usually <1 cm2. Here we report a transfer method using rosin as a support layer, whose weak interaction with graphene, good solubility and sufficient strength enable ultraclean and damage-free transfer. The transferred graphene has a low surface roughness with an occasional maximum residue height of about 15 nm and a uniform sheet resistance of 560 Ω per square with about 1% deviation over a large area. Such clean, damage-free graphene has produced the four-inch monolithic flexible graphene-based organic light-emitting diode with a high brightness of about 10,000 cd m−2 that can already satisfy the requirements for lighting sources and displays. PMID:28233778

Using UVC Light-Emitting Diodes at Wavelengths of 266 to 279 Nanometers To Inactivate Foodborne Pathogens and Pasteurize Sliced Cheese

PubMed Central

Kim, Soo-Ji; Kim, Do-Kyun

2015-01-01

UVC light is a widely used sterilization technology. However, UV lamps have several limitations, including low activity at refrigeration temperatures, a long warm-up time, and risk of mercury exposure. UV-type lamps only emit light at 254 nm, so as an alternative, UV light-emitting diodes (UV-LEDs) which can produce the desired wavelengths have been developed. In this study, we validated the inactivation efficacy of UV-LEDs by wavelength and compared the results to those of conventional UV lamps. Selective media inoculated with Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes were irradiated using UV-LEDs at 266, 270, 275, and 279 nm in the UVC spectrum at 0.1, 0.2, 0.5, and 0.7 mJ/cm2, respectively. The radiation intensity of the UV-LEDs was about 4 μW/cm2, and UV lamps were covered with polypropylene films to adjust the light intensity similar to those of UV-LEDs. In addition, we applied UV-LED to sliced cheese at doses of 1, 2, and 3 mJ/cm2. Our results showed that inactivation rates after UV-LED treatment were significantly different (P < 0.05) from those of UV lamps at a similar intensity. On microbiological media, UV-LED treatments at 266 and 270 nm showed significantly different (P < 0.05) inactivation effects than other wavelength modules. For sliced cheeses, 4- to 5-log reductions occurred after treatment at 3 mJ/cm2 for all three pathogens, with negligible generation of injured cells. PMID:26386061

Microwave-assisted one-step synthesis of white light-emitting carbon dot suspensions

NASA Astrophysics Data System (ADS)

Vanessa, Hinterberger; Wenshuo, Wang; Cornelia, Damm; Simon, Wawra; Martin, Thoma; Wolfgang, Peukert

2018-06-01

In this contribution, we demonstrate that an aqueous solution with adjustable fluorescent color, including white light emission, can be achieved by a rapid one-step microwave synthesis method resulting in a mixture of blue-emitting carbon dots (CDs) and the yellow-emitting 2,3-diaminophenazine (DAP). Aqueous mixtures of o-phenylene-diamine (oPD) and citric acid (CA) are used as precursors. The resulting product structures are analyzed by FT-IR and NMR spectroscopy and the size of the resulting CDs is determined by atomic force microscopy to be 1.1 ± 0.3 nm. The synthesized solution exhibits two fluorescence emission peaks at 430 and 560 nm, which were found to originate from the CDs and DAP, respectively. The intensity ratio of both fluorescence peaks depends on pH, which is driven by the protonation state of DAP. In consequence, the fluorescence emission color of the CD solution can be tuned precisely and reproducibly from blue to white to yellow by careful control of the pH. Finally, at a pH level of 5.4, at which there is equal blue and yellow emission intensity, a white light emitting solution can be successfully produced in a very fast and simple synthesis procedure.

Spectral characteristics of light sources for S-cone stimulation.

PubMed

Schlegelmilch, F; Nolte, R; Schellhorn, K; Husar, P; Henning, G; Tornow, R P

2002-11-01

Electrophysiological investigations of the short-wavelength sensitive pathway of the human eye require the use of a suitable light source as a S-cone stimulator. Different light sources with their spectral distribution properties were investigated and compared with the ideal S-cone stimulator. First, the theoretical background of the calculation of relative cone energy absorption from the spectral distribution function of the light source is summarized. From the results of the calculation, the photometric properties of the ideal S-cone stimulator will be derived. The calculation procedure was applied to virtual light sources (computer generated spectral distribution functions with different medium wavelengths and spectrum widths) and to real light sources (blue and green light emitting diodes, blue phosphor of CRT-monitor, multimedia projector, LCD monitor and notebook display). The calculated relative cone absorbencies are compared to the conditions of an ideal S-cone stimulator. Monochromatic light sources with wavelengths of less than 456 nm are close to the conditions of an ideal S-cone stimulator. Spectrum widths up to 21 nm do not affect the S-cone activation significantly (S-cone activation change < 0.2%). Blue light emitting diodes with peak wavelength at 448 nm and spectrum bandwidth of 25 nm are very useful for S-cone stimulation (S-cone activation approximately 95%). A suitable display for S-cone stimulation is the Trinitron computer monitor (S-cone activation approximately 87%). The multimedia projector has a S-cone activation up to 91%, but their spectral distribution properties depends on the selected intensity. LCD monitor and notebook displays have a lower S-cone activation (< or = 74%). Carefully selecting the blue light source for S-cone stimulation can reduce the unwanted L-and M-cone activation down to 4% for M-cones and 1.5% for L-cones.

Masked red-emitting carbopyronine dyes with photosensitive 2-diazo-1-indanone caging group.

PubMed

Kolmakov, Kirill; Wurm, Christian; Sednev, Maksim V; Bossi, Mariano L; Belov, Vladimir N; Hell, Stefan W

2012-03-01

Caged near-IR emitting fluorescent dyes are in high demand in optical microscopy but up to now were unavailable. We discovered that the combination of a carbopyronine dye core and a photosensitive 2-diazo-1-indanone residue leads to masked near-IR emitting fluorescent dyes. Illumination of these caged dyes with either UV or visible light (λ < 420 nm) efficiently generates fluorescent compounds with absorption and emission at 635 nm and 660 nm, respectively. A high-yielding synthetic route with attractive possibilities for further dye design is described in detail. Good photostability, high contrast, and a large fluorescence quantum yield after uncaging are the most important features of the new compounds for non-invasive imaging in high-resolution optical microscopy. For use in immunolabelling the caged dyes were decorated with a (hydrophilic) linker and an (activated) carboxyl group.

AlN/ITO-Based Hybrid Electrodes with Conducting Filaments: Their Application to Ultraviolet Light-Emitting Diodes.

PubMed

Kim, Kyeong Heon; Lee, Tae Ho; Kim, Tae Geun

2017-07-19

A hybrid-type transparent conductive electrode (H-TCE) structure comprising an AlN rod array with conducting filaments (CFs) and indium tin oxide (ITO) films is proposed to improve both current injection and distribution as well as optical transmittance in the UV region. These CFs, generated in UV-transparent AlN rod areas using an electric field, can be used as conducting paths for carrier injection from a metal to a semiconductor such as p-(Al)GaN, which allows perfect Ohmic behavior with high transmittance (>95% at 365 nm) to be obtained. In addition, conduction across AlN rods and Ohmic conduction mechanisms are investigated by analyzing AlN rods and AlN rod/p-AlGaN film interfaces. We apply these H-TCEs to three near-UV light-emitting diodes (LEDs) (385 nm LEDs with p-GaN and p-AlGaN terminated surfaces and 365 nm LED with p-AlGaN terminated surface). We confirm that the light power outputs increase by 66%, 79%, and 103%, whereas the forward voltages reduce by 5.6%, 10.2%, and 8.6% for 385 nm p-GaN terminated, 385 nm p-AlGaN terminated, and 365 nm p-AlGaN terminated LEDs with H-TCEs, respectively, compared to LEDs with reference ITOs.

Enhanced Electro-Static Discharge Endurance of GaN-Based Light-Emitting Diodes with Specially Designed Electron Blocking Layer

NASA Astrophysics Data System (ADS)

Wang, Chunxia; Zhang, Xiong; Guo, Hao; Chen, Hongjun; Wang, Shuchang; Yang, Hongquan; Cui, Yiping

2013-10-01

GaN-based light-emitting diodes (LEDs) with specially designed electron blocking layers (EBLs) between the multiple quantum wells (MQWs) and the top p-GaN layer have been developed. The EBLs consist of Mg-doped p-AlGaN/GaN superlattice (SL) with the layer thickness of p-AlGaN varied from 1 to 10 nm and the layer thickness of p-GaN fixed at 1 nm in this study. It was found that under a 2000 V reverse bias voltage condition, the electro-static discharge (ESD) yield increased from 61.98 to 99.51% as the thickness of p-AlGaN in the EBLs was increased from 1 to 10 nm. Since the ESD yield was 97.80%, and maximum value for LEDs' light output power (LOP) and minimum value for the forward voltage (Vf) were achieved when the thickness of p-AlGaN in the EBLs was 9 nm with a 20 mA injection current, it was concluded that the p-AlGaN/GaN SL EBLs with the combination of 9-nm-thick p-AlGaN and 1-nm-thick p-GaN would be beneficial to the fabrication of the GaN-based LEDs with high brightness, high ESD endurance, and low Vf.

Femtosecond digital lensless holographic microscopy to image biological samples.

PubMed

Mendoza-Yero, Omel; Calabuig, Alejandro; Tajahuerce, Enrique; Lancis, Jesús; Andrés, Pedro; Garcia-Sucerquia, Jorge

2013-09-01

The use of femtosecond laser radiation in digital lensless holographic microscopy (DLHM) to image biological samples is presented. A mode-locked Ti:Sa laser that emits ultrashort pulses of 12 fs intensity FWHM, with 800 nm mean wavelength, at 75 MHz repetition rate is used as a light source. For comparison purposes, the light from a light-emitting diode is also used. A section of the head of a drosophila melanogaster fly is studied with both light sources. The experimental results show very different effects of the pinhole size on the spatial resolution with DLHM. Unaware phenomena on the field of the DLHM are analyzed.

Red Emission of SrAl2O4:Mn4+ Phosphor for Warm White Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Chi, N. T. K.; Tuan, N. T.; Lien, N. T. K.; Nguyen, D. H.

2018-05-01

In this work, SrAl2O4:Mn4+ phosphor is prepared by co-precipitation. The phase structure, morphology, composition and luminescent performance of the phosphor are investigated in detail with x-ray diffraction, field emission scanning electron microscopy, steady-state photoluminescence (PL) spectra, and temperature-dependent PL measurements. The phosphor shows a strong red emission peak at ˜ 690 nm, which is due to the transition between electronic levels and the electric dipole transition 2Eg to 4A2g of Mn4+ ions located at the sites with D3d local symmetry. The sample doped with 0.04 mol.% Mn4+ exhibits intense red emission with high thermal stability and appropriate International Commission on Illumination (CIE) coordinates (x = 0.6959, y = 0.2737). It is also found that the phosphor absorption in an extended band from 250 nm to 500 nm has three peaks at 320 nm, 405 nm, and 470 nm, which match well with the emission band of ultraviolet (UV) lighting emission diode (LED) or blue LED chips. These results demonstrate that SrAl2O4:Mn4+ phosphor can play the role of activator in narrow red-emitting phosphor, which is potentially useful in UV (˜ 320 nm) or blue (˜ 460 nm) LED.

Continuous-wave ultraviolet generation at 320 nm by intracavity frequency doubling of red-emitting Praseodymium lasers

NASA Astrophysics Data System (ADS)

Richter, A.; Pavel, N.; Heumann, E.; Huber, G.; Parisi, D.; Toncelli, A.; Tonelli, M.; Diening, A.; Seelert, W.

2006-04-01

We describe a new approach for the generation of coherent ultraviolet radiation. Continuous-wave ultraviolet light at 320 nm has been obtained by intracavity frequency doubling of red-emitting Praseodymium lasers. Lasing at the 640-nm fundamental wavelength in Pr:LiYF4 and Pr:BaY2F8 was realized by employing an optically pumped semiconductor laser at 480 nm as pump source.Using LiB3O5 as nonlinear medium, ~19 mW of ultraviolet radiation with ~9% optical efficiency with respect to absorbed power was reached for both laser crystals; the visible-to-ultraviolet conversion efficiency was 26% and 35% for Pr:LiYF4 and Pr:BaY2F8, respectively.

Low-melanin containing pullulan production from sugarcane bagasse hydrolysate by Aureobasidium pullulans in fermentations assisted by light-emitting diode.

PubMed

Terán Hilares, Ruly; Orsi, Camila Ayres; Ahmed, Muhammad Ajaz; Marcelino, Paulo Franco; Menegatti, Carlos Renato; da Silva, Silvio Silvério; Dos Santos, Júlio César

2017-04-01

Pullulan is a polymer produced by Aureobasidium pullulans and the main bottleneck for its industrial production is the presence of melanin pigment. In this study, light-emitting diodes (LEDs) of different wavelengths were used to assist the fermentation process aiming to produce low-melanin containing pullulan by wild strain of A. pullulans LB83 with different carbon sources. Under white light using glucose-based medium, 11.75g.L -1 of pullulan with high melanin content (45.70UA 540nm .g -1 ) was obtained, this production improved in process assisted by blue LED light, that resulted in 15.77g.L -1 of pullulan with reduced content of melanin (4.46UA 540nm .g -1 ). By using sugarcane bagasse (SCB) hydrolysate as carbon source, similar concentration of pullulan (about 20g.L -1 ) was achieved using white and blue LED lights, with lower melanin contents in last. Use of LED light was found as a promising approach to assist biotechnological process for low-melanin containing pullulan production. Copyright © 2017 Elsevier Ltd. All rights reserved.

Color-tunable and high-efficiency organic light-emitting diode by adjusting exciton bilateral migration zone

NASA Astrophysics Data System (ADS)

Liu, Shengqiang; Wu, Ruofan; Huang, Jiang; Yu, Junsheng

2013-09-01

A voltage-controlled color-tunable and high-efficiency organic light-emitting diode (OLED) by inserting 16-nm N,N'-dicarbazolyl-3,5-benzene (mCP) interlayer between two complementary emitting layers (EMLs) was fabricated. The OLED emitted multicolor ranging from blue (77.4 cd/A @ 6 V), white (70.4 cd/A @ 7 V), to yellow (33.7 cd/A @ 9 V) with voltage variation. An equivalent model was proposed to reveal the color-tunable and high-efficiency emission of OLEDs, resulting from the swing of exciton bilateral migration zone near mCP/blue-EML interface. Also, the model was verified with a theoretical arithmetic using single-EML OLEDs to disclose the crucial role of mCP exciton adjusting layer.

Determination of the Width of the Carrier Recombination Zone in Organic Light-Emitting Diodes

DTIC Science & Technology

2003-09-18

biphenyl-4,48-diamine ~TPD!/tris-~8-hydroxyquinolinato! aluminum III ( Alq3 )/ Mg:Ag. In addition, an independent evaluation of the light output coupling...5 min. TPD, obtained from H. W. Sands, was used as the hole transport layer and Alq3 , ob- tained from TCI America, was used as the emitting/electron...transport layer. TPD was used as received while Alq3 was purified by train sublimation. A 100 nm thick Mg:Ag film,4 © 2003 American Institute of

Small animal imaging platform for quantitative assessment of short-wave infrared-emitting contrast agents

NASA Astrophysics Data System (ADS)

Hu, Philip; Mingozzi, Marco; Higgins, Laura M.; Ganapathy, Vidya; Zevon, Margot; Riman, Richard E.; Roth, Charles M.; Moghe, Prabhas V.; Pierce, Mark C.

2015-03-01

We report the design, calibration, and testing of a pre-clinical small animal imaging platform for use with short-wave infrared (SWIR) emitting contrast agents. Unlike materials emitting at visible or near-infrared wavelengths, SWIR-emitting agents require detection systems with sensitivity in the 1-2 μm wavelength region, beyond the range of commercially available small animal imagers. We used a collimated 980 nm laser beam to excite rare-earth-doped NaYF4:Er,Yb nanocomposites, as an example of a SWIR emitting material under development for biomedical imaging applications. This beam was raster scanned across the animal, with fluorescence in the 1550 nm wavelength region detected by an InGaAs area camera. Background adjustment and intensity non-uniformity corrections were applied in software. The final SWIR fluorescence image was overlaid onto a standard white-light image for registration of contrast agent uptake with respect to anatomical features.

Biophoton emission from fingernails and fingerprints of living human subjects.

PubMed

Kim, Tae Jin; Nam, Kyung Woon; Shin, Hak-Soo; Lee, Sung Muk; Yang, Jong Soo; Soh, Kwang-Sup

2002-01-01

Biophotons emitted from the center of fingernails and fingerprints from living humans are measured for twenty healthy subjects. We devised a dark box with a photo multiplier tube (H6180-01, Hamamatsu, Japan) whose spectral range is 300 nm to approximately 650 nm and a mount with a light-receiving hole of diameter 8 mm such that biophotons from the small circular area of nail or print of each finger are detected. Significantly more biophotons are emitted from fingernail than fingerprint for each finger of every subject. For thumb the average biophoton emission rate is 23.0 +/- 4.5 counts per second, and 17.2 +/- 2.0 counts per second from the nail, and print, respectively. There is a slight tendency that the little finger emits less than the other fingers. But some fingers emit far stronger than others, and it depends upon each individual subject which finger emits strongest.

Optical Properties of CdSe/ZnS Nanocrystals

PubMed Central

Gaigalas, Adolfas K; DeRose, Paul; Wang, Lili; Zhang, Yu-Zhong

2014-01-01

Measurements are presented of the absorbance, fluorescence emission, fluorescence quantum yield, and fluorescence lifetime of CdSe/ZnS nanocrystals, also known as quantum dots (QDs). The study included three groups of nanocrystals whose surfaces were either passivated with organic molecules, modified further with carboxyl groups, or conjugated with CD14 mouse anti-human antibodies. The surface modifications had observable effects on the optical properties of the nanocrystals. The oscillator strength (OS) of the band edge transition was about 1.0 for the nanocrystals emitting at 565 nm, 605 nm, and 655 nm. The OS could not be determined for QDs with emission at 700 nm and 800 nm. The fluorescence lifetimes varied from 26 ns for nanocrystals emitting near 600 nm to 150 ns for nanocrystals emitting near 800 nm. The quantum yield ranged between 0.4 and 0.9 for the nanocrystals in this study. A brightness index (BI) was used to evaluate the suitability of the nanocrystal labels for flow cytometer measurements. Most QD labels are at least as bright as fluorescein for applications in flow cytometer assays with 488 nm excitation. For optimal brightness the QDs should be excited with 405 nm light. We observed a strong dependence of the QD absorbance at 250 nm on the surface modification of the QD. PMID:26601047

Suppression of electron overflow in 370-nm InGaN/AlGaN ultraviolet light emitting diodes with different insertion layer thicknesses

NASA Astrophysics Data System (ADS)

Wang, C. K.; Wang, Y. W.; Chiou, Y. Z.; Chang, S. H.; Jheng, J. S.; Chang, S. P.; Chang, S. J.

2017-06-01

In this study, the properties of 370-nm InGaN/AlGaN ultraviolet light emitting diodes (UV LEDs) with different thicknesses of un-doped Al0.3Ga0.7N insertion layer (IL) between the last quantum barrier and electron blocking layer (EBL) have been numerically simulated by Advance Physical Model of Semiconductor Devices (APSYS). The results show that the LEDs using the high Al composition IL can effectively improve the efficiency droop, light output power, and internal quantum efficiency (IQE) compared to the original structure. The improvements of the optical properties are mainly attributed to the energy band discontinuity and offset created by IL, which increase the potential barrier height of conduction band to suppress the electron overflow from the active region to the p-side layer.

Inorganic Halide Perovskites for Efficient Light-Emitting Diodes.

PubMed

Yantara, Natalia; Bhaumik, Saikat; Yan, Fei; Sabba, Dharani; Dewi, Herlina A; Mathews, Nripan; Boix, Pablo P; Demir, Hilmi Volkan; Mhaisalkar, Subodh

2015-11-05

Lead-halide perovskites have transcended photovoltaics. Perovskite light-emitting diodes (PeLEDs) emerge as a new field to leverage on these fascinating semiconductors. Here, we report the first use of completely inorganic CsPbBr3 thin films for enhanced light emission through controlled modulation of the trap density by varying the CsBr-PbBr2 precursor concentration. Although pure CsPbBr3 films can be deposited from equimolar CsBr-PbBr2 and CsBr-rich solutions, strikingly narrow emission line (17 nm), accompanied by elongated radiative lifetimes (3.9 ns) and increased photoluminescence quantum yield (16%), was achieved with the latter. This is translated into the enhanced performance of the resulting PeLED devices, with lower turn-on voltage (3 V), narrow electroluminescence spectra (18 nm) and higher electroluminescence intensity (407 Cd/m(2)) achieved from the CsBr-rich solutions.

Conversion of Biowaste Asian Hard Clam (Meretrix lusoria) Shells into White-Emitting Phosphors for Use in Neutral White LEDs.

PubMed

Chang, Tsung-Yuan; Wang, Chih-Min; Lin, Tai-Yuan; Lin, Hsiu-Mei

2016-12-02

The increasing volume and complexity of waste associated with the modern economy poses a serious risk to ecosystems and human health. However, the remanufacturing and recycling of waste into usable products can lead to substantial resource savings. In the present study, clam shell waste was first transformed into pure and well-crystallized single-phase white light-emitting phosphor Ca₉Gd(PO₄)₇:Eu 2+ ,Mn 2+ materials. The phosphor Ca₉Gd(PO₄)₇:Eu 2+ ,Mn 2+ materials were synthesized by the solid-state reaction method and the carbothermic reduction process, and then characterized and analyzed by means of X-ray diffraction (XRD) and photoluminescence (PL) measurements. The structural and luminescent properties of the phosphors were investigated as well. The PL and quantum efficiency measurements showed that the luminescence properties of clam shell-based phosphors were comparable to that of the chemically derived phosphors. Moreover, white light-emitting diodes were fabricated through the integration of 380 nm chips and single-phase white light-emitting phosphors (Ca 0.979 Eu 0.006 Mn 0.015 )₉Gd(PO₄)₇ into a single package of a white light emitting diode (WLED) emitting a neutral white light of 5298 K with color coordinates of (0.337, 0.344).

Conversion of Biowaste Asian Hard Clam (Meretrix lusoria) Shells into White-Emitting Phosphors for Use in Neutral White LEDs

PubMed Central

Chang, Tsung-Yuan; Wang, Chih-Min; Lin, Tai-Yuan; Lin, Hsiu-Mei

2016-01-01

The increasing volume and complexity of waste associated with the modern economy poses a serious risk to ecosystems and human health. However, the remanufacturing and recycling of waste into usable products can lead to substantial resource savings. In the present study, clam shell waste was first transformed into pure and well-crystallized single-phase white light-emitting phosphor Ca9Gd(PO4)7:Eu2+,Mn2+ materials. The phosphor Ca9Gd(PO4)7:Eu2+,Mn2+ materials were synthesized by the solid-state reaction method and the carbothermic reduction process, and then characterized and analyzed by means of X-ray diffraction (XRD) and photoluminescence (PL) measurements. The structural and luminescent properties of the phosphors were investigated as well. The PL and quantum efficiency measurements showed that the luminescence properties of clam shell-based phosphors were comparable to that of the chemically derived phosphors. Moreover, white light-emitting diodes were fabricated through the integration of 380 nm chips and single-phase white light-emitting phosphors (Ca0.979Eu0.006Mn0.015)9Gd(PO4)7 into a single package of a white light emitting diode (WLED) emitting a neutral white light of 5298 K with color coordinates of (0.337, 0.344). PMID:28774101

Study on luminescence characteristics of blue OLED with phosphor-doped host-guest structure

NASA Astrophysics Data System (ADS)

Wang, Zhen; Liu, Fei; Zheng, Xin; Chen, Ai; Xie, Jia-feng; Zhang, Wen-xia

2018-05-01

In this study, we design and fabricate phosphor-doped host-guest structure organic light-emitting diodes (OLEDs), where the blue-ray iridium complex electrophosphorescent material FIrpic acts as object material. Properties of the device can be accommodated by changing the host materials, dopant concentration and thickness of the light-emitting layer. The study shows that the host material N,N'-dicarbazolyl-3,5-benzene (mCP) has a higher triplet excited state energy level, which can effectively prevent FIrpic triplet excited state energy backtracking to host material, thus the luminous efficiency is improved. When mCP is selected as the host material, the thickness of the light-emitting layer is 30 nm and the dopant concentration is 8 wt%, the excitons can be effectively confined in the light-emitting region. As a result, the maximum current efficiency and the maximum brightness of the blue device can reach 15.5 cd/A and 7 196.3 cd/m2, respectively.

Effect of Stepwise Doping on Lifetime and Efficiency of Blue and White Phosphorescent Organic Light Emitting Diodes.

PubMed

Lee, Song Eun; Lee, Ho Won; Lee, Seok Jae; Koo, Ja-ryong; Lee, Dong Hyung; Yang, Hyung Jin; Kim, Hye Jeong; Yoon, Seung Soo; Kim, Young Kwan

2015-02-01

We investigated a light emission mechanism of blue phosphorescent organic light emitting diodes (PHOLEDs), using a stepwise doping profile of 2, 8, and 14 wt.% within the emitting layer (EML). We fabricated several blue PHOLEDs with phosphorescent blue emitter iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,C2]picolinate doped in N,N'-dicarbazolyl-3,5-benzene as a p-type host material. A blue PHOLED with the highest doping concentration as part of the EML close to an electron transporting layer showed a maximum luminous efficiency of 20.74 cd/A, and a maximum external quantum efficiency of 10.52%. This can be explained by effective electron injection through a highly doped EML side. Additionally, a white OLED based on the doping profile was fabricated with two thin red EMLs within a blue EML maintaining a thickness of 30 nm for the entire EML. Keywords: Blue Phosphorescent Organic Light Emitting Diodes, Stepwise Doping Structure, Charge Trapping Effect.

High-efficiency electroluminescence and amplified spontaneous emission from a thermally activated delayed fluorescent near-infrared emitter

NASA Astrophysics Data System (ADS)

Kim, Dae-Hyeon; D'Aléo, Anthony; Chen, Xian-Kai; Sandanayaka, Atula D. S.; Yao, Dandan; Zhao, Li; Komino, Takeshi; Zaborova, Elena; Canard, Gabriel; Tsuchiya, Youichi; Choi, Eunyoung; Wu, Jeong Weon; Fages, Frédéric; Brédas, Jean-Luc; Ribierre, Jean-Charles; Adachi, Chihaya

2018-02-01

Near-infrared organic light-emitting diodes and semiconductor lasers could benefit a variety of applications including night-vision displays, sensors and information-secured displays. Organic dyes can generate electroluminescence efficiently at visible wavelengths, but organic light-emitting diodes are still underperforming in the near-infrared region. Here, we report thermally activated delayed fluorescent organic light-emitting diodes that operate at near-infrared wavelengths with a maximum external quantum efficiency of nearly 10% using a boron difluoride curcuminoid derivative. As well as an effective upconversion from triplet to singlet excited states due to the non-adiabatic coupling effect, this donor-acceptor-donor compound also exhibits efficient amplified spontaneous emission. By controlling the polarity of the active medium, the maximum emission wavelength of the electroluminescence spectrum can be tuned from 700 to 780 nm. This study represents an important advance in near-infrared organic light-emitting diodes and the design of alternative molecular architectures for photonic applications based on thermally activated delayed fluorescence.

Emission enhancement of light-emitting diode by localized surface plasmon induced by Ag/p-GaN double grating

NASA Astrophysics Data System (ADS)

Xie, Ruijie; Li, Zhiquan; Li, Xin; Gu, Erdan; Niu, Liyong; Sha, Xiaopeng

2018-07-01

In this paper, a new type of light-emitting diodes (LEDs) structure is designed to enhance the light emission efficiency of GaN-based LEDs. The structure mainly includes Ag grating, ITO layer and p-GaN grating. The principle of stimulating the localized surface plasmon to improve the luminous characteristics of the LED by using this structure is discussed. Based on the COMSOL software, the finite element method is used to simulate the LED structure. The normalized radiated powers, the normalized absorbed powers under different wavelength and geometric parameters, and the distribution of the electric field with the particular geometric parameters are obtained. The simulation results show that with a local ITO thickness of 32 nm, an etching depth of 29 nm, a grating period of 510 nm and a duty ratio of 0.5, the emission intensity of the designed GaN-based LED structure has increased by nearly 55 times than the ordinary LED providing a reliable foundation for the development of high-performance GaN-based LEDs.

Inactivation of Pseudomonas aeruginosa biofilm after ultraviolet light-emitting diode treatment: a comparative study between ultraviolet C and ultraviolet B

NASA Astrophysics Data System (ADS)

Argyraki, Aikaterini; Markvart, Merete; Bjørndal, Lars; Bjarnsholt, Thomas; Petersen, Paul Michael

2017-06-01

The objective of this study was to test the inactivation efficiency of two different light-based treatments, namely ultraviolet B (UVB) and ultraviolet C (UVC) irradiation, on Pseudomonas aeruginosa biofilms at different growth stages (24, 48, and 72 h grown). In our experiments, a type of AlGaN light-emitting diodes (LEDs) was used to deliver UV irradiation on the biofilms. The effectiveness of the UVB at 296 nm and UVC at 266 nm irradiations was quantified by counting colony-forming units. The survival of less mature biofilms (24 h grown) was studied as a function of UV-radiant exposure. All treatments were performed on three different biological replicates to test reproducibility. It was shown that UVB irradiation was significantly more effective than UVC irradiation in inactivating P. aeruginosa biofilms. UVC irradiation induced insignificant inactivation on mature biofilms. The fact that the UVB at 296 nm exists in daylight and has such disinfection ability on biofilms provides perspectives for the treatment of infectious diseases.

A portable fluorescent sensing system using multiple LEDs

NASA Astrophysics Data System (ADS)

Shin, Young-Ho; Barnett, Jonathan Z.; Gutierrez-Wing, M. Teresa; Rusch, Kelly A.; Choi, Jin-Woo

2017-02-01

This paper presents a portable fluorescent sensing system that utilizes different light emitting diode (LED) excitation lights for multiple target detection. In order to identify different analytes, three different wavelengths (385 nm, 448 nm, and 590 nm) of excitation light emitting diodes were used to selectively stimulate the target analytes. A highly sensitive silicon photomultiplier (SiPM) was used to detect corresponding fluorescent signals from each analyte. Based on the unique fluorescent response of each analyte, it is possible to simultaneously differentiate one analyte from the other in a mixture of target analytes. A portable system was designed and fabricated consisting of a display module, battery, data storage card, and sample loading tray into a compact 3D-printed jig. The portable sensor system was demonstrated for quantification and differentiation of microalgae (Chlorella vulgaris) and cyanobacteria (Spirulina) by measuring fluorescent responses of chlorophyll a in microalgae and phycocyanin in cyanobacteria. Obtained results suggest that the developed portable sensor system could be used as a generic fluorescence sensor platform for on-site detection of multiple analytes of interest.

Ghost Spectroscopy with Classical Thermal Light Emitted by a Superluminescent Diode

NASA Astrophysics Data System (ADS)

Janassek, Patrick; Blumenstein, Sébastien; Elsäßer, Wolfgang

2018-02-01

We propose and realize the first classical ghost-imaging (GI) experiment in the frequency or wavelength domain, thus performing ghost spectroscopy using thermal light exhibiting photon bunching. The required wavelength correlations are provided by light emitted by spectrally broadband near-infrared amplified spontaneous emission of a semiconductor-based superluminescent diode. They are characterized by wavelength-resolved intensity cross-correlation measurements utilizing two-photon-absorption interferometry. Finally, a real-world spectroscopic application of this ghost spectroscopy with a classical light scheme is demonstrated in which an absorption band of trichloromethane (chloroform) at 1214 nm is reconstructed with a spectral resolution of 10 nm as a proof-of-principle experiment. This ghost-spectroscopy work fills the gap of a hitherto missing analogy between the spatial and the spectral domain in classical GI modalities, with the expectation of contributing towards a broader dissemination of correlated photon ghost modalities, hence paving the way towards more applications which exploit the favorable advantages.

Fluorescent Properties of Manganese Halide Benzothiazole Inorganic-Organic Hybrids.

PubMed

Yu, Hui; Mei, YingXuan; Wei, ZhenHong; Mei, GuangQuan; Cai, Hu

2016-11-01

The reaction of manganese (II) halides MnX 2 and benzothiazole (btz) in the concentrated acids HX (X = Cl, Br) at 80 °C resulted in the formation of two inorganic-organic hybrid complexes: [(btz) 2 (MnX 4 )]·2H 2 O (X = Cl, 1; X = Br, 2). Both compounds showed green luminescence and exhibited moderate quantum yields of 43.17 % for 1 and 26.18 % for 2, which were directly originated from the tetrahedral coordination of Mn 2+ ion. Two organic - inorganic hybrids [(btz) 2 (MnX 4 )]·2H 2 O based on MnCl 2 , benzothiazole and halide acids emitted green light with the moderate quantum efficiencies when excited by 365 nm light. Graphical abstract Two organic-inorganic hybrids [(btz) 2 (MnX 4 )]·2H 2 O based on MnCl 2 , benzothiazole and halide acids emitted green light with the moderate quantum efficiencies when excited by 365 nm light.

Visible-light vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Saarinen, Mika J.; Xiang, Ning; Dumitrescu, Mihail M.; Vilokkinen, Ville; Melanen, Petri; Orsila, Seppo; Uusimaa, Petteri; Savolainen, Pekka; Pessa, Markus

2001-05-01

Visible vertical-cavity surface-emitting lasers (VCSELs) are potential light sources for polymer optical fibre (POF) data transmission systems. Minimum attenuation of light in standard PMMA-POFs occurs at about 650 nm. For POFs of a few tens of meters in length VCSELs at slightly longer wavelengths (670 - 690 nm) are also acceptable. So far, the visible VCSELs have been grown by metal organic chemical vapour deposition (MOCVD). They may also be grown by a novel variant of molecular beam epitaxy (MBE), a so-called all-solid-source MBE or SSMBE. In this paper, we describe growth of the first visible-light VCSELs by SSMBE and present the main results obtained. In particular, we have achieved lasing action at a sub-milliamp cw drive current for a VCSEL having the emission window of 8um in diameter, while a 10um device exhibited an external quantum efficiency of 6.65% in CW operation at room temperature. The lasing action up to temperature of 45°C has been demonstrated.

Adjunctive 830 nm light-emitting diode therapy can improve the results following aesthetic procedures

PubMed Central

Kim, Won-Serk; Ohshiro, Toshio; Trelles, Mario A; Vasily, David B

2015-01-01

Background: Aggressive, or even minimally aggressive, aesthetic interventions are almost inevitably followed by such events as discomfort, erythema, edema and hematoma formation which could lengthen patient downtime and represent a major problem to the surgeon. Recently, low level light therapy with light-emitting diodes (LED-LLLT) at 830 nm has attracted attention in wound healing indications for its anti-inflammatory effects and control of erythema, edema and bruising. Rationale: The wavelength of 830 nm offers deep penetration into living biological tissue, including bone. A new-generation of 830 nm LEDs, based on those developed in the NASA Space Medicine Laboratory, has enabled the construction of planar array-based LED-LLLT systems with clinically useful irradiances. Irradiation with 830 nm energy has been shown in vitro and in vivo to increase the action potential of epidermal and dermal cells significantly. The response of the inflammatory stage cells is enhanced both in terms of function and trophic factor release, and fibroblasts demonstrate superior collagenesis and elastinogenesis. Conclusions: A growing body of clinical evidence is showing that applying 830 nm LED-LLLT as soon as possible post-procedure, both invasive and noninvasive, successfully hastens the resolution of sequelae associated with patient downtime in addition to significantly speeding up frank wound healing. This article reviews that evidence, and attempts to show that 830 nm LED-LLLT delivers swift resolution of postoperative sequelae, minimizes downtime and enhances patient satisfaction. PMID:26877592

Strontium and barium iodide high light yield scintillators

NASA Astrophysics Data System (ADS)

Cherepy, Nerine J.; Hull, Giulia; Drobshoff, Alexander D.; Payne, Stephen A.; van Loef, Edgar; Wilson, Cody M.; Shah, Kanai S.; Roy, Utpal N.; Burger, Arnold; Boatner, Lynn A.; Choong, Woon-Seng; Moses, William W.

2008-02-01

Europium-doped strontium and barium iodide are found to be readily growable by the Bridgman method and to produce high scintillation light yields. SrI2(Eu ) emits into the Eu2+ band, centered at 435nm, with a decay time of 1.2μs and a light yield of ˜90000photons/MeV. It offers energy resolution better than 4% full width at half maximum at 662keV, and exhibits excellent light yield proportionality. BaI2(Eu ) produces >30000photons/MeV into the Eu2+ band at 420nm (<1μs decay). An additional broad impurity-mediated recombination band is present at 550nm (>3μs decay), unless high-purity feedstock is used.

Stepped In content growth of InGaN

NASA Astrophysics Data System (ADS)

Kanie, Hisashi; Yoshimura, Takaya

2004-03-01

Although InGaN plays an important role in blue lasers or blue light emitting diodes the characteristic luminescent properties of InGaN is not yet well elucidated. One of them is the double- or multi- peaked luminescent band [1] often observed from the InGaN epilayers. The mechanism is explained by the In content fluctuation or phase separations. We report the observation of the stepped-In-content growth on the facets of InGaN microcrystal under the scanning electron microscope equipped with a highly resolved (50 nm) cathodoluminescent imaging system. InGaN microcrystals were synthesized by nitridation of the mixture of In compound and GaN microcrystals by ammonia. We observed small rectangular crystals emitting at 420 nm with a size of 150-300 x 250-450 nm oriented in the crystallographic direction on a facet emitting at 370 nm. We also observed that a crystal emitting at 460 nm exists in a belt on a facet emitting at 420 nm. Frequency analysis of wavelengths of emission band peak shows 3 peaks at 370, 420, and 450 nm. We think the mechanism of the InGaN growth with a stepped increase in In content is comparable to that of the compositional pulling effect [2] except that the initial nucleus of richer In content InGaN growth is not a endpoint of dislocation that acts as a non-luminescent center. [1] S. Pereira, et.al., Appl. Phys. Lett. 81, 1207 (2002). [2]K. Hiramatsu,et.al. MRS Internet J. Nitride Sem. Res.vl2, article 6.

Quantum Dotting the "i" of Inquiry: A Guided Inquiry Approach to Teaching Nanotechnology

ERIC Educational Resources Information Center

Laubach, Timothy A.; Elizondo, Lee A.; McCann, Patrick J.; Gilani, Shahryar

2010-01-01

When illuminating four "mystery" vials of nanoparticle solution with a 405-nm light emitting diode (LED), four distinct colors related to the peak wavelength of fluorescent emission can be observed. This phenomenon perplexes high school physics students and leads to the subsequent exploratory question, "Why are the four vials emitting a different…

Efficient blue and white polymer light emitting diodes based on a well charge balanced, core modified polyfluorene derivative.

PubMed

Das, Dipjyoti; Gopikrishna, Peddaboodi; Singh, Ashish; Dey, Anamika; Iyer, Parameswar Krishnan

2016-03-14

Fabrication of efficient blue and white polymer light-emitting diodes (PLEDs) using a well charge balanced, core modified polyfluorene derivative, poly[2,7-(9,9'-dioctylfluorene)-co-N-phenyl-1,8-naphthalimide (99:01)] (PFONPN01), is presented. The excellent film forming properties as observed from the morphological study and the enhanced electron transport properties due to the inclusion of the NPN unit in the PFO main chain resulted in improved device properties. Bright blue light was observed from single layer PLEDs with PFONPN01 as an emissive layer (EML) as well as from double layer PLEDs using tris-(8-hydroxyquinoline) aluminum (Alq3) as an electron transporting layer (ETL) and LiF/Al as a cathode. The effect of ETL thickness on the device performance was studied by varying the Alq3 thickness (5 nm, 10 nm and 20 nm) and the device with an ETL thickness of 20 nm was found to exhibit the maximum brightness value of 11 662 cd m(-2) with a maximum luminous efficiency of 4.87 cd A(-1). Further, by using this highly electroluminescent blue PFONPN01 as a host and a narrow band gap, yellow emitting small molecule, dithiophene benzothiadiazole (DBT), as a guest at three different concentrations (0.2%, 0.4% and 0.6%), WPLEDs with the ITO/PEDOT:PSS/emissive layer/Alq3(20 nm)/LiF/Al configuration were fabricated and maximum brightness values of 8025 cd m(-2), 9565 cd m(-2) and 10 180 cd m(-2) were achieved respectively. 0.4% DBT in PFONPN01 was found to give white light with Commission International de l'Echairage (CIE) coordinates of (0.31, 0.38), a maximum luminous efficiency of 6.54 cd A(-1) and a color-rendering index (CRI) value of 70.

White organic light-emitting diodes with ultra-thin mixed emitting layer

NASA Astrophysics Data System (ADS)

Jeon, T.; Forget, S.; Chenais, S.; Geffroy, B.; Tondelier, D.; Bonnassieux, Y.; Ishow, E.

2012-02-01

White light can be obtained from Organic Light Emitting Diodes by mixing three primary colors, (i.e. red, green and blue) or two complementary colors in the emissive layer. In order to improve the efficiency and stability of the devices, a host-guest system is generally used as an emitting layer. However, the color balance to obtain white light is difficult to control and optimize because the spectrum is very sensitive to doping concentration (especially when a small amount of material is used). We use here an ultra-thin mixed emitting layer (UML) deposited by thermal evaporation to fabricate white organic light emitting diodes (WOLEDs) without co-evaporation. The UML was inserted in the hole-transporting layer consisting of 4, 4'-bis[N-(1-naphtyl)-N-phenylamino]biphenyl (α-NPB) instead of using a conventional doping process. The UML was formed from a single evaporation boat containing a mixture of two dipolar starbust triarylamine molecules (fvin and fcho) presenting very similar structures and thermal properties and emitting in complementary spectral regions (orange and blue respectively) and mixed according to their weight ratio. The composition of the UML specifically allows for fine tuning of the emission color despite its very thin thickness down to 1 nm. Competitive energy transfer processes from fcho and the host interface toward fvin are key parameters to control the relative intensity between red and blue emission. White light with very good CIE 1931 color coordinate (0.34, 0.34) was obtained by simply adjusting the UML film composition.

White light-emitting nanocomposites based on an oxadiazole-carbazole copolymer (POC) and InP/ZnS quantum dots

NASA Astrophysics Data System (ADS)

Bruno, Annalisa; Borriello, Carmela; Di Luccio, Tiziana; Nenna, Giuseppe; Sessa, Lucia; Concilio, Simona; Haque, Saif A.; Minarini, Carla

2013-11-01

In this work, we studied energetic and optical proprieties of a polyester-containing oxadiazole and carbazole units that we will indicate as POC. This polymer is characterized by high photoluminescence activity in the blue region of the visible spectrum, making it suitable for the development of efficient white-emitting organic light emission devices. Moreover, POC polymer has been combined with two red emitters InP/ZnS quantum dots (QDs) to obtain nanocomposites with wide emission spectra. The two types of QDs have different absorption wavelengths: 570 nm [InP/ZnS(570)] and 627 nm [InP/ZnS(627)] and were inserted in the polymer at different concentrations. The optical properties of the nanocomposites have been investigated and compared to the ones of the pure polymer. Both spectral and time resolved fluorescence measurements show an efficient energy transfer from the polymer to QDs, resulting in white-emitting nanocomposites.

Anticounterfeiting Quick Response Code with Emission Color of Invisible Metal-Organic Frameworks as Encoding Information.

PubMed

Wang, Yong-Mei; Tian, Xue-Tao; Zhang, Hui; Yang, Zhong-Rui; Yin, Xue-Bo

2018-06-21

Counterfeiting is a global epidemic that is compelling the development of new anticounterfeiting strategy. Herein, we report a novel multiple anticounterfeiting encoding strategy of invisible fluorescent quick response (QR) codes with emission color as information storage unit. The strategy requires red, green, and blue (RGB) light-emitting materials for different emission colors as encrypting information, single excitation for all of the emission for practicability, and ultraviolet (UV) excitation for invisibility under daylight. Therefore, RGB light-emitting nanoscale metal-organic frameworks (NMOFs) are designed as inks to construct the colorful light-emitting boxes for information encrypting, while three black vertex boxes were used for positioning. Full-color emissions are obtained by mixing the trichromatic NMOFs inks through inkjet printer. The encrypting information capacity is easily adjusted by the number of light-emitting boxes with the infinite emission colors. The information is decoded with specific excitation light at 275 nm, making the QR codes invisible under daylight. The composition of inks, invisibility, inkjet printing, and the abundant encrypting information all contribute to multiple anticounterfeiting. The proposed QR codes pattern holds great potential for advanced anticounterfeiting.

Long-wavelength vertical-cavity laser research at Gore

NASA Astrophysics Data System (ADS)

Jayaraman, Vijaysekhar; Geske, J. C.; MacDougal, Michael H.; Peters, Frank H.; Lowes, Ted D.; Char, T. T.; Van Deusen, Dale R.; Goodnough, T.; Donhowe, Mark N.; Kilcoyne, Sean P.; Welch, David J.

1999-04-01

Vertical cavity surface emitting lasers (VCSELs) operating near 1310 or 1550 nm have been the subject of intensive research by multiple groups for several years. In the past year at Gore, we have demonstrated the first 1300 nm VCSELs which operate with useful power, high modulation rate, and low voltage over the commercial temperature range of 0 - 70 degree(s)C. These results have been achieved using a new structure in which an 850 nm VCSEL optical pump is integrated with the 1300 nm VCSEL. Electrical drive is applied to the 850 nm pump, and 1300 nm light is emitted from the integrated structure. This approach has resulted in over a milliwatt of single transverse mode power at room temperature, and several hundred microwatts of single transverse mode power at 70 degree(s)C. In addition, these devices demonstrate multi-gigabit modulation and excellent coupling efficiency to single-mode fiber.

Effects of blue light on the circadian system and eye physiology.

PubMed

Tosini, Gianluca; Ferguson, Ian; Tsubota, Kazuo

2016-01-01

Light-emitting diodes (LEDs) have been used to provide illumination in industrial and commercial environments. LEDs are also used in TVs, computers, smart phones, and tablets. Although the light emitted by most LEDs appears white, LEDs have peak emission in the blue light range (400-490 nm). The accumulating experimental evidence has indicated that exposure to blue light can affect many physiologic functions, and it can be used to treat circadian and sleep dysfunctions. However, blue light can also induce photoreceptor damage. Thus, it is important to consider the spectral output of LED-based light sources to minimize the danger that may be associated with blue light exposure. In this review, we summarize the current knowledge of the effects of blue light on the regulation of physiologic functions and the possible effects of blue light exposure on ocular health.

Recent progress on monolithic fiber amplifiers for next generation of gravitational wave detectors

NASA Astrophysics Data System (ADS)

Wellmann, Felix; Booker, Phillip; Hochheim, Sven; Theeg, Thomas; de Varona, Omar; Fittkau, Willy; Overmeyer, Ludger; Steinke, Michael; Weßels, Peter; Neumann, Jörg; Kracht, Dietmar

2018-02-01

Single-frequency fiber amplifiers in MOPA configuration operating at 1064 nm (Yb3+) and around 1550 nm (Er3+ or Er3+:Yb3+) are promising candidates to fulfill the challenging requirements of laser sources of the next generation of interferometric gravitational wave detectors (GWDs). Most probably, the next generation of GWDs is going to operate not only at 1064 nm but also at 1550 nm to cover a broader range of frequencies in which gravitational waves are detectable. We developed an engineering fiber amplifier prototype at 1064 nm emitting 215 W of linearly-polarized light in the TEM00 mode. The system consists of three modules: the seed source, the pre-amplifier, and the main amplifier. The modular design ensures reliable long-term operation, decreases system complexity and simplifies repairing and maintenance procedures. It also allows for the future integration of upgraded fiber amplifier systems without excessive downtimes. We also developed and characterized a fiber amplifier prototype at around 1550 nm that emits 100 W of linearly-polarized light in the TEM00 mode. This prototype uses an Er3+:Yb3+ codoped fiber that is pumped off-resonant at 940 nm. The off-resonant pumping scheme improves the Yb3+-to-Er3+ energy transfer and prevents excessive generation of Yb3+-ASE.

Synthesis, energy transfer and tunable emission properties of SrSb2O6:Eu3 +, Bi3 + phosphor

NASA Astrophysics Data System (ADS)

Cao, Renping; Fu, Ting; Peng, Dedong; Cao, Chunyan; Ruan, Wen; Yu, Xiaoguang

2016-12-01

Host SrSb2O6, SrSb2O6:Bi3 +, SrSb2O6:Eu3 +, and SrSb2O6:Eu3 +, Bi3 + phosphors are synthesized by solid state reaction method in air. Host SrSb2O6 with excitation 254 nm shows weak green-yellow emission in the range of 320-780 nm due to Sb5 + → O2- transition. SrSb2O6:Bi3 + phosphor with excitation 365 nm emits green light within the range 400-650 nm owing to the 3P1 → 1S0 transition of Bi3 + ion. SrSb2O6:Eu3 + phosphor with excitation 254 nm exhibits a systematically varied hue from green to orange-red light by increasing Eu3 + concentration from 0 to 7 mol%, and that with excitation 394 nm only shows orange-red light. The optimal Eu3 + concentration is 4 mol% in SrSb2O6:Eu3 + phosphor. SrSb2O6:Eu3 +, Bi3 + phosphor with excitation 254 and 394 nm emits orange-red light. Emission intensity of SrSb2O6:Eu3 + phosphor may be enhanced > 2 times by co-doping Bi3 + ion because of the fluxing agent and energy transfer roles of Bi3 + ion in SrSb2O6:Eu3 +, Bi3 + phosphor. The luminous mechanism of SrSb2O6:Eu3 +, Bi3 + phosphor is analyzed and explained by the simplified energy level diagrams of Sb2O62 - group, Bi3 + and Eu3 + ions, and energy transfer processes between them.

Covering the optical spectrum through collective rare-earth doping of NaGdF4 nanoparticles: 806 and 980 nm excitation routes.

PubMed

Skripka, A; Marin, R; Benayas, A; Canton, P; Hemmer, E; Vetrone, F

2017-05-17

Today, at the frontier of biomedical research, the need has been clearly established for integrating disease detection and therapeutic function in one single theranostic system. Light-emitting nanoparticles are being intensively investigated to fulfil this demand, by continuously developing nanoparticle systems simultaneously emitting in both the UV/visible (light-triggered release and activation of drugs) and the near-infrared (imaging and tracking) spectral regions. In this work, rare-earth (RE) doped nanoparticles (RENPs) were synthesized via a thermal decomposition process and spectroscopically investigated as potential candidates as all-in-one optical imaging, diagnostic and therapeutic agents. These core/shell/shell nanoparticles (NaGdF 4 :Er 3+ ,Ho 3+ ,Yb 3+ /NaGdF 4 :Nd 3+ ,Yb 3+ /NaGdF 4 ) are optically excited by heating-free 806 nm light that, aside from minimizing the local thermal load, also allows to obtain a deeper sub-tissue penetration with respect to the still widely used 980 nm light. Moreover, these water-dispersed nanoplatforms offer interesting assets as triggers/probes for biomedical applications, by virtue of a plethora of emission bands (spanning the 380-1600 nm range). Our results pave the way to use these RENPs for UV/visible-triggered photodynamic therapy/drug release, while simultaneously tracking the nanoparticle biodistribution and monitoring their therapeutic action through the near-infrared signal that overlaps with biological transparency windows.

First demonstration of green and amber LED-pumped Nd:YAG laser

NASA Astrophysics Data System (ADS)

Tarkashvand, M.; Farahbod, A. H.; Hashemizadeh, S. A.

2018-05-01

For the first time, to the best of our knowledge, a green (520 nm) and amber (592 nm) light emitting diode-pumped Nd:YAG laser is reported. The laser oscillator is a stable semi-planar resonator with a total length of 140 mm. The green (amber) light emitting diode-pumped laser produced a 107 (52) µJ laser energy, at 2.6 (0.7) J electrical pump energy. The oscillator operated at a low repetition rate (about 0.1 Hz) in free-running mode, where the laser spikes were initiated about 210–280 µs after the leading edge of the pump pulse. Moreover, the transverse mode profiles of the resonator, pump absorption efficiency, and optical gain have been studied in some detail.

Near-infrared (NIR) optogenetics using up-conversion system

NASA Astrophysics Data System (ADS)

Hososhima, Shoko; Yuasa, Hideya; Ishizuka, Toru; Yawo, Hiromu

2015-03-01

Non-invasive remote control technologies designed to manipulate neural functions for a comprehensive and quantitative understanding of the neuronal network in the brain as well as for the therapy of neurological disorders have long been awaited. Recently, it has become possible to optically manipulate the neuronal activity using biological photo-reactive molecules such as channelrhodopsin-2 (ChR2). However, ChR2 and its relatives are mostly reactive to visible light which does not effectively penetrate through biological tissues. In contrast, near-infrared (NIR) light penetrates deep into the tissues because biological systems are almost transparent to light within this so-called `imaging window'. Here we used lanthanide nanoparticles (LNPs), which are composed of rare-earth elements, as luminous bodies to activate channelrhodopsins (ChRs) since they absorb low-energy NIR light to emit high-energy visible light (up-conversion). Neuron-glioma-hybrid ND-7/23 cells were cultured with LNP(NaYF4:Sc/Yb/Er) particles (peak emission, 543 nm) and transfected to express C1V1 (peak absorbance, 539 nm), a chimera of ChR1 and VChR1. The photocurrents were generated in response to NIR laser light (976 nm) to a level comparable to that evoked by a filtered Hg lamp (530-550 nm). NIR light pulses also evoked action potentials in the cultured neurons that expressed C1V1. It is suggested that the green luminescent light emitted from LNPs effectively activated C1V1 to generate the photocurrent. With the optimization of LNPs, acceptor photo-reactive biomolecules and optics, this system could be applied to non-invasively actuate neurons deep in the brain.

LED lighting and seasonality effects antioxidant properties of baby leaf lettuce.

PubMed

Samuolienė, Giedrė; Sirtautas, Ramūnas; Brazaitytė, Aušra; Duchovskis, Pavelas

2012-10-01

We report on the application of supplementary light-emitting diode (LED) lighting within a greenhouse for cultivation of red, green and light green leaf baby lettuces (Lactuca sativa L.) grown under natural illumination and high-pressure sodium (HPS) lamps (16-h; PPFD-170 μmol m(-2)s(-1)) during different growing season. Supplementary lighting from blue 455/470 nm and green 505/530 nm LEDs was applied (16-h; PPFD-30 μmol m(-2)s(-1)). Our results showed that to achieve solely a positive effect is complicated, because metabolism of antioxidant properties in lettuce depended on multicomponent exposure of variety, light quality or seasonality. The general trend of a greater positive effect of supplemental LED components on the vitamin C and tocopherol contents was in order: 535>505>455>470 nm; on the total phenol content: 505>535=470>455 nm; on the DPPH free-radical scavenging capacity: 535=470>505>455 nm; on the total anthocyanins: 505>455>470>535 nm. Further investigations are needed for understanding the mechanism and interaction between antioxidants and light signal transduction pathways. Copyright © 2012 Elsevier Ltd. All rights reserved.

Topical methyl-aminolevulinate photodynamic therapy using red light-emitting diode light for treatment of multiple actinic keratoses: A randomized, double-blind, placebo-controlled study.

PubMed

Pariser, David; Loss, Robert; Jarratt, Michael; Abramovits, William; Spencer, James; Geronemus, Roy; Bailin, Philip; Bruce, Suzanne

2008-10-01

The use of light-emitting diode light offers practical advantages in photodynamic therapy (PDT) with topical methyl-aminolevulinate (MAL) for management of actinic keratoses (AK). We sought to evaluate the efficacy of MAL PDT using red light-emitting diode light. We conducted a multicenter, double-blind, randomized study. A total of 49 patients with 363 AK lesions had 16.8% MAL cream applied under occlusion for 3 hours, and 47 patients with 360 AK lesions had vehicle cream similarly applied. The lesions were then illuminated (630 nm, light dose 37 J/cm2) with repeated treatment 1 week later. Complete lesion and patient (all lesions showing complete response) response rates were evaluated 3 months after last treatment. MAL PDT was superior (P<.0001) to vehicle PDT with respect to lesion complete response (86.2% vs 52.2%, odds ratio 6.9 [95% confidence interval 4.7-10.3]) and patient complete response (59.2% vs 14.9%, odds ratio 13.2 [95% confidence interval 4.1-43.1]). The study population may not be representative of all patients with AK. MAL PDT using red light-emitting diode light is an appropriate treatment alternative for multiple AK lesions.

High-Power 365 nm UV LED Mercury Arc Lamp Replacement for Photochemistry and Chemical Photolithography

PubMed Central

2016-01-01

Ultraviolet light emitting diodes (UV LEDs) have become widespread in chemical research as highly efficient light sources for photochemistry and photopolymerization. However, in more complex experimental setups requiring highly concentrated light and highly spatially resolved patterning of the light, high-pressure mercury arc lamps are still widely used because they emit intense UV light from a compact arc volume that can be efficiently coupled into optical systems. Advances in the deposition and p-type doping of gallium nitride have recently permitted the manufacture of UV LEDs capable of replacing mercury arc lamps also in these applications. These UV LEDs exceed the spectral radiance of mercury lamps even at the intense I-line at 365 nm. Here we present the successful exchange of a high-pressure mercury arc lamp for a new generation UV LED as a light source in photolithographic chemistry and its use in the fabrication of high-density DNA microarrays. We show that the improved light radiance and efficiency of these LEDs offer substantial practical, economic and ecological advantages, including faster synthesis, lower hardware costs, very long lifetime, an >85-fold reduction in electricity consumption and the elimination of mercury waste and contamination. PMID:28066690

High-Power 365 nm UV LED Mercury Arc Lamp Replacement for Photochemistry and Chemical Photolithography.

PubMed

Hölz, K; Lietard, J; Somoza, M M

2017-01-03

Ultraviolet light emitting diodes (UV LEDs) have become widespread in chemical research as highly efficient light sources for photochemistry and photopolymerization. However, in more complex experimental setups requiring highly concentrated light and highly spatially resolved patterning of the light, high-pressure mercury arc lamps are still widely used because they emit intense UV light from a compact arc volume that can be efficiently coupled into optical systems. Advances in the deposition and p -type doping of gallium nitride have recently permitted the manufacture of UV LEDs capable of replacing mercury arc lamps also in these applications. These UV LEDs exceed the spectral radiance of mercury lamps even at the intense I-line at 365 nm. Here we present the successful exchange of a high-pressure mercury arc lamp for a new generation UV LED as a light source in photolithographic chemistry and its use in the fabrication of high-density DNA microarrays. We show that the improved light radiance and efficiency of these LEDs offer substantial practical, economic and ecological advantages, including faster synthesis, lower hardware costs, very long lifetime, an >85-fold reduction in electricity consumption and the elimination of mercury waste and contamination.

Edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide.

PubMed

Liang, H K; Yu, S F; Yang, H Y

2010-02-15

An edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide is fabricated by filtered cathodic vacuum arc technique at low deposition temperature (approximately 150 degrees C). Electroluminescence with emission peak at 387 nm is observed. Good correlation between electro- and photo- luminescence spectra suggests that the i-ZnO layer of the heterojunction supports radiative excitonic recombination. Furthermore, it is found that the emission intensity can be enhanced by approximately 5 times due to the presence of the rib waveguide. Only fundamental TE and TM polarizations are supported inside the rib waveguide and the intensity of TE polarization is approximately 2.2 time larger than that of TM polarization.

Fabrication of an Organic Light-Emitting Diode from New Host π Electron Rich Zinc Complex

NASA Astrophysics Data System (ADS)

Jafari, Mohammad Reza; Janghouri, Mohammad; Shahedi, Zahra

2017-01-01

A new π electron rich zinc complex was used as a fluorescent material in organic light-emitting diodes (OLEDs). Devices with a structure of indium tin oxide/poly (3,4-ethylenedi-oxythiophene):poly(styrenesulfonate) (PEDOT: PSS) (50 nm)/polyvinylcarbazole (60 nm)/Zn: %2 porphyrin derivatives (45 nm)/Al (150 nm) were fabricated. Porphyrin derivatives accounting for 2 wt.% in the π electron rich zinc complex were used as a host. The electroluminescence (EL) spectra of porphyrin derivatives indicated a red shift, as π electron rich zinc complex EL spectra. The device (4) has also a luminance of 3420 cd/m2 and maximum efficiency of 1.58 cd/A at 15 V, which are the highest values among four devices. The result of Commission International del'Eclairage (CIE) (X, Y) coordinate and EL spectrum of device (3) indicated that it is more red shifted compared to other devices. Results of this work indicate that π electron rich zinc complex is a promising host material for high efficiency red OLEDs and has a simple structure compared to Alq3-based devices.

Differential Effects of 670 and 830 nm Red near Infrared Irradiation Therapy: A Comparative Study of Optic Nerve Injury, Retinal Degeneration, Traumatic Brain and Spinal Cord Injury

PubMed Central

Giacci, Marcus K.; Wheeler, Lachlan; Lovett, Sarah; Dishington, Emma; Majda, Bernadette; Bartlett, Carole A.; Thornton, Emma; Harford-Wright, Elizabeth; Leonard, Anna; Vink, Robert; Harvey, Alan R.; Provis, Jan; Dunlop, Sarah A.; Fitzgerald, Melinda

2014-01-01

Red/near-infrared irradiation therapy (R/NIR-IT) delivered by laser or light-emitting diode (LED) has improved functional outcomes in a range of CNS injuries. However, translation of R/NIR-IT to the clinic for treatment of neurotrauma has been hampered by lack of comparative information regarding the degree of penetration of the delivered irradiation to the injury site and the optimal treatment parameters for different CNS injuries. We compared the treatment efficacy of R/NIR-IT at 670 nm and 830 nm, provided by narrow-band LED arrays adjusted to produce equal irradiance, in four in vivo rat models of CNS injury: partial optic nerve transection, light-induced retinal degeneration, traumatic brain injury (TBI) and spinal cord injury (SCI). The number of photons of 670 nm or 830 nm light reaching the SCI injury site was 6.6% and 11.3% of emitted light respectively. Treatment of rats with 670 nm R/NIR-IT following partial optic nerve transection significantly increased the number of visual responses at 7 days after injury (P≤0.05); 830 nm R/NIR-IT was partially effective. 670 nm R/NIR-IT also significantly reduced reactive species and both 670 nm and 830 nm R/NIR-IT reduced hydroxynonenal immunoreactivity (P≤0.05) in this model. Pre-treatment of light-induced retinal degeneration with 670 nm R/NIR-IT significantly reduced the number of Tunel+ cells and 8-hydroxyguanosine immunoreactivity (P≤0.05); outcomes in 830 nm R/NIR-IT treated animals were not significantly different to controls. Treatment of fluid-percussion TBI with 670 nm or 830 nm R/NIR-IT did not result in improvements in motor or sensory function or lesion size at 7 days (P>0.05). Similarly, treatment of contusive SCI with 670 nm or 830 nm R/NIR-IT did not result in significant improvements in functional recovery or reduced cyst size at 28 days (P>0.05). Outcomes from this comparative study indicate that it will be necessary to optimise delivery devices, wavelength, intensity and duration of R/NIR-IT individually for different CNS injury types. PMID:25105800

n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

NASA Astrophysics Data System (ADS)

Li, Ling; Zhang, Yuantao; Yan, Long; Jiang, Junyan; Han, Xu; Deng, Gaoqiang; Chi, Chen; Song, Junfeng

2016-12-01

n-ZnO/p-GaN heterojunction light-emitting diodes with a p-GaN/Al0.1Ga0.9N/n+-GaN polarization-induced tunneling junction (PITJ) were fabricated by metal-organic chemical vapor deposition. An intense and sharp ultraviolet emission centered at ˜396 nm was observed under forward bias. Compared with the n-ZnO/p-GaN reference diode without PITJ, the light intensity of the proposed diode is increased by ˜1.4-folds due to the improved current spreading. More importantly, the studied diode operates continuously for eight hours with the decay of only ˜3.5% under 20 mA, suggesting a remarkable operating stability. The results demonstrate the feasibility of using PITJ as hole injection layer for high-performance ZnO-based light-emitting devices.

A lamp light-emitting diode-induced fluorescence detector for capillary electrophoresis.

PubMed

Xu, Jing; Xiong, Yan; Chen, Shiheng; Guan, Yafeng

2008-07-15

A light-emitting diode-induced fluorescence detector (LED-FD) for capillary electrophoresis was constructed and evaluated. A lamp LED with an enhanced emission spectrum and a band pass filter was used as the excitation light source. Refractive index matching fluid (RIMF) was used in the detection cell to reduce scattering light and the noise level. The limit of detection (LOD) for fluorescein was 1.5 nM (SNR=3). The system exhibited linear responses in the range of 1 x 10(-8) to 5 x 10(-6)M (R=0.999). Application of the lamp LED-FD for the analysis of FITC-labeled ephedra herb extract by capillary electrophoresis was demonstrated.

Generation of White Light from Dysprosium-Doped Strontium Aluminate Phosphor by a Solid-State Reaction Method

NASA Astrophysics Data System (ADS)

Sahu, Ishwar Prasad; Bisen, D. P.; Brahme, N.; Tamrakar, Raunak Kumar

2016-04-01

A single-host lattice, white light-emitting SrAl2O4:Dy3+ phosphor was synthesized by a solid-state reaction method. The crystal structure of prepared SrAl2O4:Dy3+ phosphor was in a monoclinic phase with space group P21. The chemical composition of the sintered SrAl2O4:Dy3+ phosphor was confirmed by the energy dispersive x-ray spectroscopy technique. Under ultra-violet excitation, the characteristic emissions of Dy3+ are peaking at 475 nm, 573 nm and 660 nm, originating from the transitions of 4F9/2 → 6H15/2, 4F9/2 →&!nbsp; 6H13/2 and 4F9/2 → 6H11/2 in the 4f9 configuration of Dy3+ ions. Commission International de I'Eclairage color coordinates of SrAl2O4:Dy3+ are suitable for white light-emitting phosphor. In order to investigate the suitability of the samples as white color light sources for industrial uses, correlated color temperature (CCT) and color rendering index (CRI) values were calculated. Values of CCT and CRI were found well within the defined acceptable range. Mechanoluminescence (ML) intensity of SrAl2O4:Dy3+ phosphor increased linearly with increasing impact velocity of the moving piston. Thus, the present investigation indicates piezo-electricity was responsible for producing ML in sintered SrAl2O4:Dy3+ phosphor. Decay rates of the exponential decaying period of the ML curves do not change significantly with impact velocity. The photoluminescence and ML results suggest that the synthesized SrAl2O4:Dy3+ phosphor was useful for the white light-emitting diodes and stress sensor respectively.

Using UVC Light-Emitting Diodes at Wavelengths of 266 to 279 Nanometers To Inactivate Foodborne Pathogens and Pasteurize Sliced Cheese.

PubMed

Kim, Soo-Ji; Kim, Do-Kyun; Kang, Dong-Hyun

2016-01-01

UVC light is a widely used sterilization technology. However, UV lamps have several limitations, including low activity at refrigeration temperatures, a long warm-up time, and risk of mercury exposure. UV-type lamps only emit light at 254 nm, so as an alternative, UV light-emitting diodes (UV-LEDs) which can produce the desired wavelengths have been developed. In this study, we validated the inactivation efficacy of UV-LEDs by wavelength and compared the results to those of conventional UV lamps. Selective media inoculated with Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes were irradiated using UV-LEDs at 266, 270, 275, and 279 nm in the UVC spectrum at 0.1, 0.2, 0.5, and 0.7 mJ/cm(2), respectively. The radiation intensity of the UV-LEDs was about 4 μW/cm(2), and UV lamps were covered with polypropylene films to adjust the light intensity similar to those of UV-LEDs. In addition, we applied UV-LED to sliced cheese at doses of 1, 2, and 3 mJ/cm(2). Our results showed that inactivation rates after UV-LED treatment were significantly different (P < 0.05) from those of UV lamps at a similar intensity. On microbiological media, UV-LED treatments at 266 and 270 nm showed significantly different (P < 0.05) inactivation effects than other wavelength modules. For sliced cheeses, 4- to 5-log reductions occurred after treatment at 3 mJ/cm(2) for all three pathogens, with negligible generation of injured cells. Copyright © 2015, American Society for Microbiology. All Rights Reserved.

Plasma surface reflectance spectroscopy for non-invasive and continuous monitoring of extracellular component of blood

NASA Astrophysics Data System (ADS)

Sakota, Daisuke; Takatani, Setsuo

2012-04-01

To achieve the quantitative optical non-invasive diagnosis of blood during extracorporeal circulation therapies, the instrumental technique to extract extracellular spectra from whole blood was developed. In the circuit, the continuous blood flow was generated by a centrifugal blood pump. The oxygen saturation was maintained 100% by an oxygenator. The developed glass optical flow cell was attached to the outlet tubing of the oxygenator. The halogen lamp including the light from 400 to 900 nm wavelength was used for the light source. The light was guided into an optical fiber. The light emitted by the fiber was collimated and emitted to the flow cell flat surface at the incident angle of 45 degrees. The light just reflected on the boundary between inner surface of the flow cell and plasma at 45 degrees was detected by the detection fiber. The detected light was analyzed by a spectral photometer. The obtained spectrum from 400 to 600nm wavelength was not changed with respect to the hematocrit. In contrast, the signal in the spectral range was changed when the plasma free hemoglobin increased. By using two spectral range, 505+/-5 nm and 542.5+/-2.5 nm, the differential spectrum was correlated with the free hemoglobin at R2=0.99. On the other hand, as for the hematocrit, the differential spectrum was not correlated at R2=0.01. Finally, the plasma free hemoglobin was quantified with the accuracy of 22+/-19mg/dL. The result shows that the developed plasma surface reflectance spectroscopy (PSRS) can extract the plasma spectrum from flowing whole blood.

Coumarin-Based Oxime Esters: Photobleachable and Versatile Unimolecular Initiators for Acrylate and Thiol-Based Click Photopolymerization under Visible Light-Emitting Diode Light Irradiation.

PubMed

Li, Zhiquan; Zou, Xiucheng; Zhu, Guigang; Liu, Xiaoya; Liu, Ren

2018-05-09

Developing efficient unimolecular visible light-emitting diode (LED) light photoinitiators (PIs) with photobleaching capability, which are essential for various biomedical applications and photopolymerization of thick materials, remains a great challenge. Herein, we demonstrate the synthesis of a series of novel PIs, containing coumarin moieties as chromophores and oxime ester groups as initiation functionalities and explore their structure-activity relationship. The investigated oxime esters can effectively induce acrylates and thiol-based click photopolymerization under 450 nm visible LED light irradiation. The initiator O-3 exhibited excellent photobleaching capability and enabled photopolymerization of thick materials (∼4.8 mm). The efficient unimolecular photobleachable initiators show great potential in dental materials and 3D printings.

Up-converted ultraviolet luminescence of Er3+:BaGd2ZnO5 phosphors for healthy illumination

NASA Astrophysics Data System (ADS)

Zhang, Ya; Cui, Qingzhi; Wang, Zhanyong; Liu, Gan; Tian, Tian; Xu, Jiayue

2016-09-01

Moderate level of exposure to the solar irradiation containing UV component is essential for health care. To incorporate the UV-emitting phosphors into the commercial YAG-based white light-emitting diode introduces the possibilities of healthy illumination to individuals' daily lives. 1 mol.% Er3+-doped BaGd2ZnO5 (BGZ) particles were synthesized via sol-gel method and efficient up-converted luminescence peaked at 380 nm was detected under 480 nm excitation. The mixed phosphors with varied mass ratio of Er3+:BGZ and Ce3+:YAG particles were encapsulated to form LEDs. The study of the LEDs indicated that the introduction of BGZ component favored the enhancement of color-rendering index and the neutralization of the white light emitting. The WLED with the BGZ/YAG ratio of 8:2 was recommendable for its excellent overall white light luminous performances and UV intensity of 84.55 mW/cm2. The UV illumination dose of the WLEDs with mixed YAG and BGZ was controllable by adjusting the ratio, the illumination distance and the illumination time. Er3+:BGZ phosphors are promising UVemitting phosphors for healthy indoor illumination.

ITO/metal/ITO anode for efficient transparent white organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Joo, Chul Woong; Lee, Jonghee; Sung, Woo Jin; Moon, Jaehyun; Cho, Nam Sung; Chu, Hye Yong; Lee, Jeong-Ik

2015-02-01

We report on the characteristics of enhanced and balanced white-light emission of transparent organic light emitting diodes (TOLEDs) by introducing anode that has a stack structure of ITO/metal/ITO (IMI). We have investigated an anode that has a stack structure of IMI. IMI anodes are typically composed of a thin Ag layer (˜15 nm) sandwiched between two ITO layers (˜50 nm). By inserting an Ag layer it was possible to achieve sheet resistance lower than 3 Ω/sq. and transmittance of 86% at a wavelength of 550 nm. The Ag insert can act as a reflective component. With its counterpart, a transparent cathode made of a thin Ag layer (˜15 nm), micro-cavities (MC) can be effectively induced in the OLED, leading to improved performance. Using an IMI anode, it was possible to significantly increase the current efficiencies. The current efficiencies of the top and the bottom of the IMI TOLED increased to 23.0 and 15.6 cd/A, respectively, while those of the white TOLED with the ITO anode were 20.7 and 5.1 cd/A, respectively. A 30% enhancement in the overall current efficiency was achieved by taking advantage of the MC effect and the low sheet resistance.

Infection

DTIC Science & Technology

2010-09-01

promote host tissue attachment and prevent sepsis represent new areas of scientific inquiry. Novel Ways to Detect Infection Swabs, needle aspiration, deep...chromosome, the bacteria emits light at 486-nm wavelength during normal bacteria respiration, and the amount of photons emitted is determined by the amount of...within 5 hours.3 Bacterial or fungal DNA is amplified by polymerase chain reaction and introduced into a mass spectroscopy by electrospray ionization

The quantitative models for broiler chicken response to monochromatic, combined, and mixed light-emitting diode light: A meta-analysis.

PubMed

Yang, Yefeng; Pan, Chenhao; Zhong, Renhai; Pan, Jinming

2018-06-01

Although many experiments have been conducted to clarify the response of broiler chickens to light-emitting diode (LED) light, those published results do not provide a solid scientific basis for quantifying the response of broiler chickens. This study used a meta-analysis to establish light spectral models of broiler chickens. The results indicated that 455 to 495 nm blue LED light produced the greatest positive response in body weight by 10.66% (BW; P < 0.001) and 515 to 560 nm green LED light increased BW by 6.27% (P < 0.001) when compared with white light. Regression showed that the wavelength (455 to 660 nm) was negatively related to BW change of birds, with a decrease of about 4.9% BW for each 100 nm increase in wavelength (P = 0.002). Further analysis suggested that a combination of the two beneficial light sources caused a synergistic effect. BW was further increased in birds transferred either from green LED light to blue LED light (17.23%; P < 0.001) or from blue LED light to green LED light (17.52%; P < 0.001). Moreover, birds raised with a mixture of green and blue LED light showed a greater BW promotion (10.66%; P < 0.001) than those raised with green LED light (6.27%). A subgroup analysis indicated that BW response to monochromatic LED light was significant regardless of the genetic strain, sex, control light sources, light intensity and regime of LED light, environmental temperature, and dietary ME and CP (P > 0.05). However, there was an interaction between the FCR response to monochromatic LED light with those covariant factors (P < 0.05). Additionally, green and yellow LED light played a role in affecting the meat color, quality, and nutrition of broiler chickens. The results indicate that the optimal ratio of green × blue of mixed LED light or shift to green-blue of combined LED light may produce the optimized production performance, whereas the optimal ratio of green/yellow of mixed or combined LED light may result in the optimized meat quality.

Photometric flow injection determination of phosphate on a PDMS microchip using an optical detection system assembled with an organic light emitting diode and an organic photodiode.

PubMed

Liu, Rong; Ishimatsu, Ryoichi; Yahiro, Masayuki; Adachi, Chihaya; Nakano, Koji; Imato, Toshihiko

2015-01-01

A compact photometric detector was constructed from an organic light emitting diode (OLED) based on a europium complex, europium(diben-zoylmethanato)3(bathophenanthroline) (Eu(DBM)3bath), as the light source and an organic photodiode (OPD) fabricated from a hetero-junction of two layers of copper phthalocyanine (CuPc)/fullerene (C60) as the photo-detector on a microchip prepared from poly(dimethylsiloxan) (PDMS) and was applied to the determination of phosphate. The OLED and the OPD were fabricated by a vapor deposition method on an indium tin oxide (ITO) coated glass substrate with the following layered structure; Glass (0.7 mm)/ITO (110 nm)/4,4'-bis[N-(1-naphthyl)-N-phenyl amino]-biphenyl (α-NPD) (30 nm)/4,4'-di(N-carbazolyl)biphenyl (CBP): Eu(3+) (8 wt%, 30 nm)/bathocuproine (BCP) (30 nm)/aluminum tris(8-hydroxyquinoline) (Alq3) (25 nm)/magnesium and silver (MgAg) (100 nm)/Ag (10nm) and Glass (0.7 mm)/ITO (110 nm)/CuPc (35 nm)/C60 (50 nm)/BCP (10 nm)/Ag (50 nm), respectively. The OLED based on the europium complex emitted a sharp light at the wavelength of 612 nm with a full width at half maximum (FWHM) of 8 nm. The performance of the photometric detector assembled was evaluated based on measurements of the absorbance of different concentrations of malachite green (MG) solutions for a batch system with 1cm long path length. The molar absorptive coefficient of the MG solution, calculated from the photocurrent of the OPD, was in good agreement with the value reported in the literature. A microchip with two inlets and one outlet U-shaped channel was prepared by a conventional photolithograph method. The OLED and the OPD were configured so as to face each other through the PDMS microchip in parallel in order to align the light axis of the OLED and the OPD with the flow cell (optical path length of 5mm), which was located at the end of outlet. For the determination of phosphate, an ion-association reaction between MG and a molybdenum-phosphate complex was utilized and a good linear relationship between the concentration and absorbance was observed in the concentration range 0-0.2 ppm, with a detection limit (S/N=3) of 0.02 ppm. The assembled photometric detector was also applied to the determination of phosphate by the flow injection of river water samples using the reagent solution containing MG and molybdenum ammonium in sulfuric acid. A good recovery (97-99%) for the river water samples, which had been spiked with the standard 0.08 ppm, with an RSD of ca 5% (n=5) was obtained using the constructed system. Copyright © 2014 Elsevier B.V. All rights reserved.

Luminescence properties of Eu 3+ and Sm 3+ coactivated Gd(III) tungstate phosphor for light-emitting diodes

NASA Astrophysics Data System (ADS)

Wei, Qiong; Chen, Donghua

2009-09-01

Rare-earth ions coactivated red phosphors Gd 0.2RE 1.8(WO 4) 3 (RE=Eu 3+ and Sm 3+) were synthesized by conventional solid-state reaction using boric acid as a flux agent. The samples were characterized by X-ray diffractometer (XRD), energy-dispersive X-ray spectrometer (EDS) and luminescence spectrometer (LS). The results showed that the Eu-Sm system exhibits higher emission intensity than those of the Eu single-doped system and Sm separate-doped system under ultraviolet (UV) radiation. Samarium(III) ions are effective in broadening and strengthened absorptions around 400 nm. Furthermore, it exhibits enhanced luminescence emission. when the mole ratio of boric acid is about 0.16, the luminescence capability is optimum. Two strongest lines at ultraviolet (394 nm) and blue (465 nm) in excitation spectra of these phosphors match well with the output wavelengths of UV and blue GaN-based light-emitting diodes (LEDs) chips.

[The dangers of blue light: True story!].

PubMed

Renard, G; Leid, J

2016-05-01

The dangers of the blue light are the object of numerous publications, for both the scientific community and the general public. The new prolific development of light sources emitting potentially toxic blue light (415-455nm) ranges from LED (Light Emitting Diodes) lamps for interior lighting to television screens, computers, digital tablets and smartphones using OLED (Organic Light Emitting Diode) or AMOLED (Active-Matrix Organic Light Emitting Diode) technology. First we will review some technical terms and the main characteristics of light perceived by the human eye. Then we will discuss scientific proof of the toxicity of blue light to the eye, which may cause cataract or macular degeneration. Analysis of the light spectra of several light sources, from natural light to LED lamps, will allow us to specify even better the dangers related to each light source. LED lamps, whether used as components for interior lighting or screens, are of concern if they are used for extended viewing times and at short distance. While we can protect ourselves from natural blue light by wearing colored glasses which filter out, on both front and back surfaces, the toxic wavelengths, it is more difficult to protect oneself from LED lamps in internal lighting, the use of which should be restricted to "white warmth" lamps (2700K). As far as OLED or AMOLED screens are concerned, the only effective protection consists of using them occasionally and only for a short period of time. Copyright © 2016 Elsevier Masson SAS. All rights reserved.

Efficient rare-earth free red-emitting Ca2YSbO6:Mn4+,M(M = Li+, Na+, K+, Mg2+) phosphors for white light-emitting diodes.

PubMed

Zhong, Jiasong; Chen, Daqin; Chen, Xiao; Wang, Keyuan; Li, Xinyue; Zhu, Yiwen; Ji, Zhenguo

2018-05-08

Owing to its low-cost and satisfactory luminescent-emission performance in warm white light-emitting diodes (w-LEDs), the non-rare-earth Mn4+-activated red phosphor has become a promising competitor of commercial rare-earth doped phosphor. In this study, a series of novel red-light emitting phosphors based on Ca2YSbO6:Mn4+ have been developed successfully by a conventional solid-state reaction. The structural and luminescent properties of these phosphors are systematically investigated. The as-prepared Ca2YSbO6:Mn4+ product exhibits a broad excitation band ranging from 250 to 600 nm and an abnormal intense deep-red emission centered at 680 nm with a full width at half maximum (FWHM) of ∼46 nm. The optimal Mn4+ doping concentration is about 0.3 mol%, and the concentration quenching mechanism is determined to be a dipole-dipole interaction. Impressively, the Ca2YSbO6:0.003Mn4+ phosphor shows an outstanding quantum efficiency of 62.6% and an excellent thermal stability. In addition, the effect of Li+, Mg2+, Na+ and K+ dopants on the luminescent properties of Mn4+-doped Ca2YSbO6 phosphors is elucidated. Furthermore, by employing the as-prepared Ca2YSbO6:Mn4+ as a red component, a warm w-LED with high color rendering index (Ra = 87.5) and low correlated color temperature (CCT = 3255 K) can be acquired. It is believed that the present phosphor has a potential application as a supplement of the red component for warm w-LEDs.

A Comparison of Pulse-Oximetry, Near-Infrared Spectroscopy (NIRS), and Gas Sensors for In-Cockpit Hypoxia Detection

DTIC Science & Technology

2012-08-29

Pulse Oximetry: Arterial oxygen saturation (SpO2) at the index finger on the left hand was measured with a finger oximeter (Model 3900 P, Datex...minutes or until their finger O2 saturation levels dropped below 50%. Oxygen saturation was measured via the left index finger with a pulse oximeter ... saturation . Pulse oximeters have two light emitting diodes, using red (600-750 nm) and near infrared (850-1000 nm) light that penetrates the skin

Synthesis and photoluminescence of EuII in barium zinc orthosilicate: a novel green color emitting phosphor for white-LEDs.

PubMed

Kasturi, S; Sivakumar, V; Varadaraju, U V

2017-05-01

A series of Eu 2+ -activated barium orthosilicates (BaZnSiO 4 ) were synthesized using a high-temperature solid-state reaction. A photoluminescence excitation study of Eu 2 + shows a broad absorption band in the range of 270-450 nm, with multiple absorption peak maxima (310, 350 and 400 nm) due to 4f-5d electronic transition. The emission spectra of all the compositions show green color emission (in the spectral region 450-550 nm with a peak maximum at 502 nm and a shoulder at ~ 490 nm) with appropriate Comission Internationale de l'Eclairage (CIE) color coordinates. The two emission peaks are due to the presence of Eu 2 + in two different Ba sites in the BaZnSiO 4 host lattice. The energy transfers between the Eu 2 + ions in BaZnSiO 4 host are elucidated from the critical concentration quenching data based on the electronic multipolar interaction. All Eu 2 + -activated BaZnSiO 4 phosphor materials can be efficiently excited in the ultraviolet (UV) to near UV-region (270-420 nm), making them attractive candidate as a green phosphor for solid state lighting-white light-emitting diodes. Copyright © 2016 John Wiley & Sons, Ltd.

Effects of blue light on the circadian system and eye physiology

PubMed Central

Ferguson, Ian; Tsubota, Kazuo

2016-01-01

Light-emitting diodes (LEDs) have been used to provide illumination in industrial and commercial environments. LEDs are also used in TVs, computers, smart phones, and tablets. Although the light emitted by most LEDs appears white, LEDs have peak emission in the blue light range (400–490 nm). The accumulating experimental evidence has indicated that exposure to blue light can affect many physiologic functions, and it can be used to treat circadian and sleep dysfunctions. However, blue light can also induce photoreceptor damage. Thus, it is important to consider the spectral output of LED-based light sources to minimize the danger that may be associated with blue light exposure. In this review, we summarize the current knowledge of the effects of blue light on the regulation of physiologic functions and the possible effects of blue light exposure on ocular health. PMID:26900325

Resonant cavity light-emitting diodes based on dielectric passive cavity structures

NASA Astrophysics Data System (ADS)

Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Zschiedrich, L.; Schmidt, F.; Ledentsov, N. N.

2017-02-01

A novel design for high brightness planar technology light-emitting diodes (LEDs) and LED on-wafer arrays on absorbing substrates is proposed. The design integrates features of passive dielectric cavity deposited on top of an oxide- semiconductor distributed Bragg reflector (DBR), the p-n junction with a light emitting region is introduced into the top semiconductor λ/4 DBR period. A multilayer dielectric structure containing a cavity layer and dielectric DBRs is further processed by etching into a micrometer-scale pattern. An oxide-confined aperture is further amended for current and light confinement. We study the impact of the placement of the active region into the maximum or minimum of the optical field intensity and study an impact of the active region positioning on light extraction efficiency. We also study an etching profile composed of symmetric rings in the etched passive cavity over the light emitting area. The bottom semiconductor is an AlGaAs-AlAs multilayer DBR selectively oxidized with the conversion of the AlAs layers into AlOx to increase the stopband width preventing the light from entering the semiconductor substrate. The approach allows to achieve very high light extraction efficiency in a narrow vertical angle keeping the reasonable thermal and current conductivity properties. As an example, a micro-LED structure has been modeled with AlGaAs-AlAs or AlGaAs-AlOx DBRs and an active region based on InGaAlP quantum well(s) emitting in the orange spectral range at 610 nm. A passive dielectric SiO2 cavity is confined by dielectric Ta2O5/SiO2 and AlGaAs-AlOx DBRs. Cylindrically-symmetric structures with multiple ring patterns are modeled. It is demonstrated that the extraction coefficient of light to the air can be increased from 1.3% up to above 90% in a narrow vertical angle (full width at half maximum (FWHM) below 20°). For very small oxide-confined apertures 100nm the narrowing of the FWHM for light extraction can be reduced down to 5°. Consequently high efficiency high brightness arrays of micro-LEDs becomes possible. For single emitters the approach is particularly interesting for oscillator strength engineering allowing high speed data transmission and for single photonics applying single quantum dot (QD) emitters and allowing >90% coupling of the emission into single mode fiber. We also note that for longer wavelength ( 1300nm) QDs the thickness of the layers and surface patterns significantly increase allowing greatly reduced processing tolerances and applying further simplifications due to the possibility of using high contrast GaAs-AlOx DBRs.

Hydrothermal synthesis infrared to visible upconversion luminescence of SrMoO4: Er3+/Yb3+ phosphor

NASA Astrophysics Data System (ADS)

Sinha, Shriya; Kumar, Kaushal

2018-04-01

The upconversion emission properties in Er3+/Yb3+ doped SrMoO4 phosphor synthesized via hydrothermal method is investigated upon 980 nm laser light excitation. The crystal structure and morphology of the synthesized phosphor are characterized by X-ray diffraction and field emission scanning electron microscopy. The X-ray diffraction pattern suggests that SrMoO4 phosphor has tetragonal phase structure. The phosphor emits strong green (525 and 552 nm) and red (665 nm) UC emissions along with weak blue (410 and 488 nm) and near infrared (798 nm) emission bands. The color emitted from the phosphor is shifted from yellow to green region with increasing the power density from 15 to 65 W/cm2. The result indicates that the present material is suitable for making infrared to visible up-converts and display devices.

Exposure to Visible Light Emitted from Smartphones and Tablets Increases the Proliferation of Staphylococcus aureus: Can this be Linked to Acne?

PubMed Central

Taheri, M.; Darabyan, M.; Izadbakhsh, E.; Nouri, F.; Haghani, M.; Mortazavi, S.A.R.; Mortazavi, G.; Mortazavi, S.M.J.; Moradi, M.

2017-01-01

Background: Due to rapid advances in modern technologies such as telecommunication technology, the world has witnessed an exponential growth in the use of digital handheld devices (e.g. smartphones and tablets). This drastic growth has resulted in increased global concerns about the safety of these devices. Smartphones, tablets, laptops, and other digital screens emit high levels of short-wavelength visible light (i.e. blue color region in the visible light spectrum). Material and Methods: At a dark environment, Staphylococcus aureus bacteria were exposed to the light emitted from common tablets/smartphones. The control samples were exposed to the same intensity of light generated by a conventional incandescent light bulb. The growth rate of bacteria was examined by measuring the optical density (OD) at 625 nm by using a spectrophotometer before the light exposure and after 30 to 330 minutes of light exposure. Results: The growth rates of bacteria in both smartphone and tablet groups were higher than that of the control group and the maximum smartphone/control and tablet/control growth ratios were observed in samples exposed to digital screens’ light for 300 min (ratios of 3.71 and 3.95, respectively). Conclusion: To the best of our knowledge, this is the first study that investigates the effect of exposure to light emitted from digital screens on the proliferation of Staphylococcus aureus and its association with acne pathogenesis. Our findings show that exposure to short-wavelength visible light emitted from smartphones and tablets can increase the proliferation of Staphylococcus aureus. PMID:28580338

Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kashiwagi, Y., E-mail: kasiwagi@omtri.or.jp; Yamamoto, M.; Saitoh, M.

2014-12-01

Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

NASA Astrophysics Data System (ADS)

Kashiwagi, Y.; Koizumi, A.; Takemura, Y.; Furuta, S.; Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Fujiwara, Y.; Murahashi, K.; Ohtsuka, K.; Nakamoto, M.

2014-12-01

Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

Digital photogrammetry and histomorphometric assessment of the effect of non-coherent light (light-emitting diode) therapy (λ640 ± 20 nm) on the repair of third-degree burns in rats.

PubMed

Neves, Silvana Maria Véras; Nicolau, Renata Amadei; Filho, Antônio Luiz Martins Maia; Mendes, Lianna Martha Soares; Veloso, Ana Maria

2014-01-01

Recent studies have demonstrated the efficacy of coherent light therapy from the red region of the electromagnetic spectrum on the tissue-healing process. This study analysed the effect of non-coherent light therapy (light-emitting diode-LED) with or without silver sulfadiazine (sulpha) on the healing process of third-degree burns. In this study, 72 rats with third-degree burns were randomly divided into six groups (n = 12): Gr1 (control), Gr2 (non-contact LED), Gr3 (contact LED), Gr4 (sulfadiazine), Gr5 (sulfadiazine + non-contact LED) and Gr6 (sulfadiazine + contact LED). The groups treated with LED therapy received treatment every 48 h (λ = 640 ± 20 nm, 110 mW, 16 J/cm(2); 41 s with contact and 680 s without contact). The digital photometric and histomorphometric analyses were conducted after the burn occurred. The combination of sulpha and LED (contact or non-contact) improved the healing of burn wounds. These results demonstrate that the combination of silver sulfadiazine with LED therapy (λ = 640 ± 20 nm, 4 J/cm(2), without contact) improves healing of third-degree burn wounds, significantly reduces the lesion area and increases the granulation tissue, increases the number of fibroblasts, promotes collagen synthesis and prevents burn infections by accelerating recovery.

Direct Band Gap Wurtzite Gallium Phosphide Nanowires

PubMed Central

2013-01-01

The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a direct band gap for wurtzite GaP. Here, we report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594 nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength is tuned across an important range of the visible light spectrum (555–690 nm). This approach of crystal structure engineering enables new pathways to tailor materials properties enhancing the functionality. PMID:23464761

Planar micro- and nano-patterning of GaN light-emitting diodes: Guidelines and limitations

NASA Astrophysics Data System (ADS)

Herrnsdorf, Johannes; Xie, Enyuan; Watson, Ian M.; Laurand, Nicolas; Dawson, Martin D.

2014-02-01

The emission area of GaN light-emitting diodes can be patterned by etch-free current aperturing methods which exploit the thin and highly resistive nature of the p-doped layer in these devices. Here, the fundamental underlying electrical and optical aspects of high-resolution current aperturing are investigated theoretically. The most critical parameter for the possible resolution is the thickness d of the p-GaN layer, but the interplay of p-GaN resistivity and electrical junction characteristics is also important. A spatial resolution of 1.59d can in principle be achieved, corresponding to about 300 nm in typical epitaxial structures. Furthermore, the emission from such a small emitter will spread by about 600 nm while propagating through the p-GaN. Both values can be reduced by reducing d.

Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Karachinsky, L. Ya.; Novikov, I. I.

It is demonstrated that metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, which emit light in the 1250–1400 nm spectral range, can be fabricated by molecular-beam epitaxy. The structural and optical properties of the heterostructures are studied by X-ray diffraction analysis, transmission electron microscopy, and the photoluminescence method. Comparative analysis of the integrated photoluminescence intensity of the heterostructures and a reference sample confirm the high efficiency of radiative recombination in the heterostructures. It is confirmed by transmission electron microscopy that dislocations do not penetrate into the active region of the metamorphic heterostructures, where the radiative recombination of carriers occurs.

Modeling and image reconstruction in spectrally resolved bioluminescence tomography

NASA Astrophysics Data System (ADS)

Dehghani, Hamid; Pogue, Brian W.; Davis, Scott C.; Patterson, Michael S.

2007-02-01

Recent interest in modeling and reconstruction algorithms for Bioluminescence Tomography (BLT) has increased and led to the general consensus that non-spectrally resolved intensity-based BLT results in a non-unique problem. However, the light emitted from, for example firefly Luciferase, is widely distributed over the band of wavelengths from 500 nm to 650 nm and above, with the dominant fraction emitted from tissue being above 550 nm. This paper demonstrates the development of an algorithm used for multi-wavelength 3D spectrally resolved BLT image reconstruction in a mouse model. It is shown that using a single view data, bioluminescence sources of up to 15 mm deep can be successfully recovered given correct information about the underlying tissue absorption and scatter.

Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer

NASA Astrophysics Data System (ADS)

Prabaswara, Aditya; Min, Jung-Wook; Zhao, Chao; Janjua, Bilal; Zhang, Daliang; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Ng, Tien Khee; Ooi, Boon S.

2018-02-01

Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color ( 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.

Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer.

PubMed

Prabaswara, Aditya; Min, Jung-Wook; Zhao, Chao; Janjua, Bilal; Zhang, Daliang; Albadri, Abdulrahman M; Alyamani, Ahmed Y; Ng, Tien Khee; Ooi, Boon S

2018-02-06

Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved ~ 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color (~ 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.

Light-Emitting Diode (LED) Traps Improve the Light-Trapping of Anopheline Mosquitoes.

PubMed

Costa-Neta, B M; da Silva, A A; Brito, J M; Moraes, J L P; Rebêlo, J M M; Silva, F S

2017-11-07

Numerous advantages over the standard incandescent lamp favor the use of light-emitting diodes (LEDs) as an alternative and inexpensive light source for sampling medically important insects in surveillance studies. Previously published studies examined the response of mosquitoes to different wavelengths, but data on anopheline mosquito LED attraction are limited. Center for Disease Control and Prevention-type light traps were modified by replacing the standard incandescent lamp with 5-mm LEDs, one emitting at 520 nm (green) and the other at 470 nm (blue). To test the influence of moon luminosity on LED catches, the experiments were conducted during the four lunar phases during each month of the study period. A total of 1,845 specimens representing eight anopheline species were collected. Anopheles (Nyssorhynchus) evansae (35.2%) was the most frequently collected, followed by An. (Nys.) triannulatus (21.9%), An. (Nys.) goeldii (12.9%), and An. (Nys.) argyritarsis (11.5%). The green LED was the most attractive light source, accounting for 43.3% of the individuals collected, followed by the blue (31.8%) and control (24.9%) lights. The LED traps were significantly more attractive than the control, independent of the lunar phase. Light trapping of anopheline mosquitoes was more efficient when the standard incandescent lamp was replaced with LEDs, regardless of the moon phase. The efficiency of LEDs improves light trapping results, and it is suggested that the use of LEDs as an attractant for anopheline mosquitoes should be taken into consideration when sampling anopheline mosquitoes. © The Authors 2017. Published by Oxford University Press on behalf of Entomological Society of America. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

LED array designing and its bactericidal effect researching on Pseudomonas aeruginosa in vitro

NASA Astrophysics Data System (ADS)

Fang, Jing; Xing, Jin; Gao, Liucun; Shen, Benjian; Kang, Hongxiang; Jie, Liang; Peng, Chen

2015-10-01

Lights with some special waveband and output power density have a bactericidal effect to some special bacteria. In this paper, the bactericidal effect of light at wavelength of 470 nm on P. aeruginosa (ATCC 27853) is researched with different irradiation dose. The light source is a LED array which is obtained by incoherent combine of 36 LEDs with emitting wavelength of 470 nm. The P. aeruginosa suspension is exposed with the LED array at the light power density of 100 mW/cm2 with exposures time of 0, 5, 10, 20, 40, and 80 min, respectively. The numbers of CFU are then determined by serial dilutions on LB agar plates. The bactericidal effect research results of 470 nm LED on P. aeruginosa show that the killing ratio increases with increasing of the exposure time. For the 80 min irradiation, as much as 92.4% reduction of P. aeruginosa is achieved. The results indicate that, in vitro, 470-nm lights produce dose dependent bactericidal effects on P. aeruginosa.

Enhanced 5-aminolevulinic acid-gold nanoparticle conjugate-based photodynamic therapy using pulse laser

NASA Astrophysics Data System (ADS)

Xu, Hao; Yao, Cuiping; Wang, Jing; Chang, Zhennan; Zhang, Zhenxi

2016-02-01

The low bioavailability is a crucial limitation for the application of 5-aminolevulinic acid (ALA) in theranostics. In this research, 5-aminolevulinic acid and gold nanoparticle conjugates (ALA-GNPs) were synthesized to improve the bioavailability of ALA and to investigate the impact of ALA photodynamic therapy (ALA-PDT) in Hela cells. A 532 nm pulse laser and light-emitting diode (central wavelengths 502 nm) were jointly used as light sources in PDT research. The results show a 532 nm pulse laser can control ALA release from ALA-GNPs by adjusting the pulse laser dose. This laser control release may be attributed to the heat generation from GNPs under pulse laser irradiation, which indicates accurately adjusting the pulse laser dose to control the drug release in the cell interior can be considered as a new cellular surgery modality. Furthermore, the PDT results in Hela cells indicate the enhancement of ALA release by pulse laser before PDT can promote the efficacy of cell eradication in the light-emitting diode PDT (LED-PDT). This laser mediated drug release system can provide a new online therapy approach in PDT and it can be utilized in the optical monitor technologies based individual theranostics.

Linearly polarized light emission from InGaN/GaN quantum well structure with high indium composition.

PubMed

Song, Hooyoung; Kim, Eun Kyu; Han, Il Ki; Lee, Sung-Ho; Hwang, Sung-Min

2011-10-01

We fabricated yellow (575 nm) emitting a-plane InGaN/GaN light emitting diode (LED). Microstructure and stress relaxation of the InGaN well layer were observed from the images of dark field transmission electron microscopy. The LED chip was operated at 3.7 V, 20 mA, and the polarization-free characteristic in nonpolar InGaN layer was confirmed from a small blue-shift of approximaely 1.7 nm with increase of current density. The high photoluminescence (PL) efficiency of 30.4% showed that this non-polar InGaN layer has a potential of application to green-red long wavelength light emitters. The PL polarization ratio at 290 K was 0.25 and the energy difference between two subbands was estimated to be 40.2 meV. The low values of polarization and energy difference were due to the stress relaxation of InGaN well layer.

A potential single-phased emission-tunable silicate phosphor Ca3Si2O7:Ce3+,Eu2+ excited by ultraviolet light for white light emitting diodes

NASA Astrophysics Data System (ADS)

Lv, Wenzhen; Guo, Ning; Jia, Yongchao; Zhao, Qi; You, Hongpeng

2013-03-01

Single-phased Ca3Si2O7:Ce3+,Eu2+ phosphor has been successfully prepared by the high temperature solid-state method. The phosphor shows efficient excitation bands from 200 to 400 nm and adjustable emission bands through the energy transfer from the Ce3+ to Eu2+ ions. The color hues can change from blue towards white ultimately to orange by adjusting the percentage content of doping ions. The investigation reveals that an electric dipole-dipole reaction mechanism should be responsible for the energy transfer from the Ce3+ to Eu2+ ions. The critical distance was obtained from the spectral overlap in terms of Dexter's theory. The developed phosphor Ca3Si2O7:Ce3+,Eu2+ exhibits two bands at 440 and 625 nm, respectively, which reveling that it has a great potentiality to be an UV-convertible phosphor for white-light emitting diodes with low color temperature.

Green perovskite light emitting diodes based on the ITO/Al2O3/CsPbBr3 heterojunction structure

NASA Astrophysics Data System (ADS)

Zhuang, Shiwei; Ma, Xue; Hu, Daqiang; Dong, Xin; Zhang, Yuantao; Zhang, Baolin

2018-03-01

Perovskite light emitting diodes (PeLEDs) now emerge as a promising new optoelectronic application field for these amazing semiconductors. For the purpose of investigating the device structures and light emission mechanisms of PeLEDs, we have fabricated green PeLEDs based on the ITO/Al2O3/CsPbBr3 heterojunction structure. The emission layer inorganic perovskite CsPbBr3 film with small grain sizes (∼28.9 nm) was prepared using a two-step method. The device exhibits a typical rectification behavior with turn-on voltage of ∼6 V. The EL emission band is narrow with the FWHM of ∼25 nm. The peak EQE of the device was ∼0.09%. The working mechanism of the device is also discussed. The result of the present work provides a feasible innovation idea of PeLEDs fabrication and great potentials for the development of perovskite based LEDs.

Opposite Behavior of Multilayer Graphene/ Indium-Tin-Oxide p-Electrode for Gallium Nitride Based-Light Emitting Diodes Depending on Thickness of Indium-Tin-Oxide Layer.

PubMed

Kim, Tae Kyoung; Yoon, Yeo Jin; Oh, Seung Kyu; Cha, Yu-Jung; Hong, In Yeol; Cho, Moon Uk; Hong, Chan-Hwa; Choi, Hong Kyw; Kwak, Joon Seop

2018-09-01

In order to improve EQE, we have investigated on the role of multilayer graphene (MLG) on the electrical and optical properties of GaN based light-emitting diodes (LEDs) with ultrathin ITO (5 nm or 10 nm)/p-GaN contacts. The MLG was transferred on the ITO/p-GaN to decrease sheet resistance of thin ITO p-electrode and improve the current spreading of LEDs. The LEDs with the ITO 5 nm and MLG/ITO 5 nm structures showed 3.25 and 3.06 V at 20 mA, and 11.69 and 13.02 mW/sr at 400 mA, respectively. After forming MLG on ITO 5 nm, the electro-optical properties were enhanced. Furthermore, the GaN based-LEDs applied to the ITO 10 nm, and MLG/ITO (10 nm) structures showed 2.95 and 3.06 V at 20 mA, and 20.28 and 16.74 mW/sr at 400 mA, respectively. The sheet resistance of the MLG transferred to ITO 5 nm was decreased approximately four fold compared to ITO 5 nm. On the other hand, the ITO 10 nm and MLG/ITO 10 nm showed a similar sheet resistance; the transmittance of the LEDs with ITO 10 nm decreased to 16% due to MLG formation on ITO. This suggests that the relationship between the sheet resistance and transmittance according to the ITO film thickness affected the electro-optical properties of the LEDs with a transparent p-electrode with the MLG/ITO dual structure.

The mensuration of delayed luminescence on ginseng

NASA Astrophysics Data System (ADS)

Xiang, Fenghua; Bai, Hua; Tang, Guoqing

2008-12-01

In this paper, the delayed luminescence of ginseng produced from two different areas was determined with the self built bioluminescence detecting system. And the attenuation curve of bioluminescence of the experimental samples were studied, before and after the samples extracted by 58% alcohol. We primarily gave out the parameters describing emitting characteristic. Using the method of optic induced bioluminescence, we also determined the weak luminescence emitting from the ginseng tuber, and find the intensity and decay time having obvious difference from skin and core, with these data we can distinguish the producing area and feature of the ginseng. In the experiment, the light-induce luminescence of the sample was menstruated, which has been infused by water and 58% alcohol; the difference between two kinds of samples which were infused and not infused has been delivered. In order to investigate the effect of excitation-light spectrum component to delayed luminescence of ginseng, a light filter witch allow a wavelength scope of 225nm~420nm pass through was installed between the light source and sample, keeping other work condition unchanged, the bioluminescence was also determined. For investigating the effect of extracting to emitting, the absorption spectrum of above samples ware studied, and the time-sequence of absorption spectrum was obtained. Based on the data obtained from our experiment, we analyzed the radiation mechanism of ginseng slice and tuber.

Red photoluminescent property and modification of WO3:Eu3+ inverse opal for blue light converted LEDs

NASA Astrophysics Data System (ADS)

Ruan, Jiufeng; Yang, Zhengwen; Huang, Anjun; Chai, Zhuangzhuang; Qiu, Jianbei; Song, Zhiguo

2018-01-01

Blue light converted light-emitting diodes is of great significance as a candidate for next generation lighting. In this work, the WO3:Eu3+ inverse opal photonic crystals were prepared and their luminescence properties were studied. The results demonstrated that the main excitation peak of WO3:Eu3+ inverse opals were located at 465 nm. The red luminescence peak at the 613 nm was observed in the WO3:Eu3+ inverse opal upon 465 nm excitation, exhibiting better red color purity. The influence of photonic band gap on the photoluminescence of WO3:Eu3+ inverse opal was obtained. When the red luminescence peak is in the regions of the photonic band gap and the edge of the band-gap, the red luminescence suppression and enhancement was observed respectively. The WO3:Eu3+ inverse opals may be a promising candidate for the blue light converted LEDs.

Illumination with 630-nm red light reduces oxidative stress and restores memory by photo-activating catalase and formaldehyde dehydrogenase in SAMP8 mice.

PubMed

Zhang, Jingnan; Yue, Xiangpei; Luo, Hongjun; Jiang, Wenjing; Mei, Yufei; Ai, Li; Gao, Ge; Wu, Yan; Yang, Hui; An, Jieran; Ding, Shumao; Yang, Xu; Sun, Bingui; Luo, Wenhong; He, Rongqiao; Jia, Jianping; Lyu, Jihui; Tong, Zhiqian

2018-06-05

Pharmacological treatments for Alzheimer's disease (AD) have not resulted in desirable clinical efficacy over 100 years. Hydrogen peroxide (H2O2), a reactive and the most stable compound of reactive oxygen species (ROS), contributes to oxidative stress in AD patients. Here, we designed a medical device to emit red light at 630±15 nm from a light-emitting diode (LED-RL) and investigated whether the LED-RL reduces brain H2O2 levels and improves memory in senescence-accelerated prone 8 mouse (SAMP8) model of age-related dementia. We found that age-associated H2O2 directly inhibited formaldehyde dehydrogenase (FDH). FDH inactivity and semicarbazide-sensitive amine oxidase (SSAO) disorder resulted in endogenous formaldehyde (FA) accumulation. Unexpectedly, excess FA, in turn, caused acetylcholine (Ach) deficiency by inhibiting choline acetyltransferase (ChAT) activity in vitro and in vivo. Interestingly, the 630-nm red light can penetrate the skull and abdomen with light penetration rates: ~49% and ~43%, respectively. Illumination with LED-RL markedly activated both catalase and FDH in the brains, cultured cells and purified protein solutions, all reduced brain H2O2 and FA levels and restored brain Ach contents. Consequently, LED-RL not only prevented early-stage memory decline but also rescued late-stage memory deficits in SAMP8 mice. We developed a phototherapeutic device with 630-nm red light, and this LED-RL reduced brain H2O2 levels and reversed age-related memory disorders. The phototherapy of LED-RL has low photo toxicity and high rate of tissue penetration, and non-invasively reverses aging-associated cognitive decline. This finding opens a promising opportunity to translate LED-RL into clinical treatment for patients with dementia.

Dual emissive manganese and copper Co-doped Zn-In-S quantum dots as a single color-converter for high color rendering white-light-emitting diodes.

PubMed

Yuan, Xi; Ma, Ruixin; Zhang, Wenjin; Hua, Jie; Meng, Xiangdong; Zhong, Xinhua; Zhang, Jiahua; Zhao, Jialong; Li, Haibo

2015-04-29

Novel white light emitting diodes (LEDs) with environmentally friendly dual emissive quantum dots (QDs) as single color-converters are one of the most promising high-quality solid-state lighting sources for meeting the growing global demand for resource sustainability. A facile method was developed for the synthesis of the bright green-red-emitting Mn and Cu codoped Zn-In-S QDs with an absorption bangdgap of 2.56 eV (485 nm), a large Stokes shift of 150 nm, and high emission quantum yield up to 75%, which were suitable for warm white LEDs based on blue GaN chips. The wide photoluminescence (PL) spectra composed of Cu-related green and Mn-related red emissions in the codoped QDs could be controlled by varying the doping concentrations of Mn and Cu ions. The energy transfer processes in Mn and Cu codoped QDs were proposed on the basis of the changes in PL intensity and lifetime measured by means of steady-state and time-resolved PL spectra. By integrating these bicolor QDs with commercial GaN-based blue LEDs, the as-fabricated tricolor white LEDs showed bright natural white light with a color rendering index of 95, luminous efficacy of 73.2 lm/W, and color temperature of 5092 K. These results indicated that (Mn,Cu):Zn-In-S/ZnS QDs could be used as a single color-converting material for the next generation of solid-state lighting.

Highly efficient single-pass frequency doubling of a continuous-wave distributed feedback laser diode using a PPLN waveguide crystal at 488 nm.

PubMed

Jechow, Andreas; Schedel, Marco; Stry, Sandra; Sacher, Joachim; Menzel, Ralf

2007-10-15

A continuous-wave distributed feedback diode laser emitting at 976 nm was frequency doubled by the use of a periodically poled lithium niobate waveguide crystal with a channel size of 3 microm x 5 microm and an interaction length of 10 mm. A laser to waveguide coupling efficiency of 75% could be achieved resulting in 304 mW of incident infrared light inside the waveguide. Blue laser light emission of 159 mW at 488 nm has been generated, which equals to a conversion efficiency of 52%. The resulting wall plug efficiency was 7.4%.

a Model to Simulate the Radiative Transfer of Fluorescence in a Leaf

NASA Astrophysics Data System (ADS)

Zhao, F.; Ni, Q.

2018-04-01

Light is reflected, transmitted and absorbed by green leaves. Chlorophyll fluorescence (ChlF) is the signal emitted by chlorophyll molecules in the leaf after the absorption of light. ChlF can be used as a direct probe of the functional status of photosynthetic machinery because of its close relationship with photosynthesis. The scattering, absorbing, and emitting properties of leaves are spectrally dependent, which can be simulated by modeling leaf-level fluorescence. In this paper, we proposed a Monte-Carlo (MC) model to simulate the radiative transfer of photons in the leaf. Results show that typical leaf fluorescence spectra can be properly simulated, with two peaks centered at around 685 nm in the red and 740 nm in the far-red regions. By analysing the sensitivity of the input parameters, we found the MC model can well simulate their influence on the emitted fluorescence. Meanwhile we compared results simulated by MC model with those by the Fluspect model. Generally they agree well in the far-red region but deviate in the red region.

Comparison of ultraviolet light-emitting diodes and low-pressure mercury-arc lamps for disinfection of water.

PubMed

Sholtes, Kari A; Lowe, Kincaid; Walters, Glenn W; Sobsey, Mark D; Linden, Karl G; Casanova, Lisa M

2016-09-01

Ultraviolet (UV) light-emitting diodes (LEDs) emitting at 260 nm were evaluated to determine the inactivation kinetics of bacteria, viruses, and spores compared to low-pressure (LP) UV irradiation. Test microbes were Escherichia coli B, a non-enveloped virus (MS-2), and a bacterial spore (Bacillus atrophaeus). For LP UV, 4-log10 reduction doses were: E. coli B, 6.5 mJ/cm(2); MS-2, 59.3 mJ/cm(2); and B. atrophaeus, 30.0 mJ/cm(2). For UV LEDs, the 4-log10 reduction doses were E. coli B, 6.2 mJ/cm(2); MS-2, 58 mJ/cm(2); and B. atrophaeus, 18.7 mJ/cm(2). Microbial inactivation kinetics of the two UV technologies were not significantly different for E. coli B and MS-2, but were different for B. atrophaeus spores. UV LEDs at 260 nm are at least as effective for inactivating microbes in water as conventional LP UV sources and should undergo further development in treatment systems to disinfect drinking water.

Correlative near-infrared light and cathodoluminescence microscopy using Y2O3:Ln, Yb (Ln = Tm, Er) nanophosphors for multiscale, multicolour bioimaging

PubMed Central

Fukushima, S.; Furukawa, T.; Niioka, H.; Ichimiya, M.; Sannomiya, T.; Tanaka, N.; Onoshima, D.; Yukawa, H.; Baba, Y.; Ashida, M.; Miyake, J.; Araki, T.; Hashimoto, M.

2016-01-01

This paper presents a new correlative bioimaging technique using Y2O3:Tm, Yb and Y2O3:Er, Yb nanophosphors (NPs) as imaging probes that emit luminescence excited by both near-infrared (NIR) light and an electron beam. Under 980 nm NIR light irradiation, the Y2O3:Tm, Yb and Y2O3:Er, Yb NPs emitted NIR luminescence (NIRL) around 810 nm and 1530 nm, respectively, and cathodoluminescence at 455 nm and 660 nm under excitation of accelerated electrons, respectively. Multimodalities of the NPs were confirmed in correlative NIRL/CL imaging and their locations were visualized at the same observation area in both NIRL and CL images. Using CL microscopy, the NPs were visualized at the single-particle level and with multicolour. Multiscale NIRL/CL bioimaging was demonstrated through in vivo and in vitro NIRL deep-tissue observations, cellular NIRL imaging, and high-spatial resolution CL imaging of the NPs inside cells. The location of a cell sheet transplanted onto the back muscle fascia of a hairy rat was visualized through NIRL imaging of the Y2O3:Er, Yb NPs. Accurate positions of cells through the thickness (1.5 mm) of a tissue phantom were detected by NIRL from the Y2O3:Tm, Yb NPs. Further, locations of the two types of NPs inside cells were observed using CL microscopy. PMID:27185264

New developments on high-efficiency infrared and InGaAlP light-emitting diodes at OSRAM Opto Semiconductors

NASA Astrophysics Data System (ADS)

Broell, Markus; Sundgren, Petrus; Rudolph, Andreas; Schmid, Wolfgang; Vogl, Anton; Behringer, Martin

2014-02-01

We present our latest results on developments of infrared and red light emitting diodes. Both chiptypes are based on the Thinfilm technology. For infrared the brightness has been raised by 25% with respect to former products in a package with standard silicon casting, corresponding to a brightness increase of 33% for the bare chip. In a lab package a wallplug efficiency of more than 72% at a wavelength of 850nm could be reached. For red InGaAlP LEDs we could demonstrate a light output in excess of 200lm/W and a brightness of 133lm at a typical operating current of 350mA.

Efficiency improvement of green light-emitting diodes by employing all-quaternary active region and electron-blocking layer

NASA Astrophysics Data System (ADS)

Usman, Muhammad; Saba, Kiran; Han, Dong-Pyo; Muhammad, Nazeer

2018-01-01

High efficiency of green GaAlInN-based light-emitting diode (LED) has been proposed with peak emission wavelength of ∼510 nm. By introducing quaternary quantum well (QW) along with the quaternary barrier (QB) and quaternary electron blocking layer (EBL) in a single structure, an efficiency droop reduction of up to 29% has been achieved in comparison to the conventional GaN-based LED. The proposed structure has significantly reduced electrostatic field in the active region. As a result, carrier leakage has been minimized and spontaneous emission rate has been doubled.

F4TCNQ-Induced Exciton Quenching Studied by Using in-situ Photoluminescence Measurements

NASA Astrophysics Data System (ADS)

Zhu, Jian; Lu, Min; Wu, Bo; Hou, Xiao-Yuan

2012-09-01

The role of F4TCNQ as an exciton quenching material in thin organic light-emitting films is investigated by means of in situ photoluminescence measurements. C60 was used as another quenching material in the experiment for comparison, with Alq3 as a common organic light-emitting material. The effect of the growth sequence of the materials on quenching was also examined. It is found that the radius of Förster energy transfer between F4TCNQ and Alq3 is close to 0 nm and Dexter energy transfer dominates in the quenching process.

Preparation of electrospun pyrochlore-structure KGdTa2O7:Eu3+ phosphor: the optical and structural properties for white light emitting diode applications.

PubMed

Yim, Chul Jin; Unithrattil, Sanjith; Chung, Woon Jin; Im, Won Bin

2013-12-01

Red emitting nanofibers, KGdTa2O7:Eu3+ were synthesized by electrospinning technique followed by heat treatment. As-prepared uniform fiber precursor with diameter ranging from about 700 nm to about 900 nm were calcined after removing organic species by calcination. The fiber surface become rough and diameter decreased to about 250-340 nm range due to decomposition of organic species and formation of inorganic phase. Morphology, structural and photoluminescent properties of fibers were analyzed using thermogravimetric and differential thermal analysis (TG-DTA), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence (PL). TG-DTA analysis indicates that KGdTa2O7:Eu3+ began to crystalize at 520 degrees C. Fibers annealed at 900 degrees C formed well crystallized uniform fibers. Under ultraviolet excitation KGdTa2O7:Eu3+ exhibits red emission due to transitions in 4f states of Eu3+. The excitation band is dominated by the Eu(3+)--O2-charge transfer band peaked at 289 nm. The emission peak is in the region that is ideal for red light emission.

Low temperature solution process-based defect-induced orange-red light emitting diode

PubMed Central

Biswas, Pranab; Baek, Sung-Doo; Hoon Lee, Sang; Park, Ji-Hyeon; Jeong Lee, Su; Il Lee, Tae; Myoung, Jae-Min

2015-01-01

We report low-temperature solution-processed p-CuO nanorods (NRs)/n-ZnO NRs heterojunction light emitting diode (LED), exploiting the native point defects of ZnO NRs. ZnO NRs were synthesized at 90 °C by using hydrothermal method while CuO NRs were synthesized at 100 °C by using microwave reaction system. The electrical properties of newly synthesized CuO NRs revealed a promising p-type nature with a hole concentration of 9.64 × 1018 cm−3. The current-voltage characteristic of the heterojunction showed a significantly high rectification ratio of 105 at 4 V with a stable current flow. A broad orange-red emission was obtained from the forward biased LED with a major peak at 610 nm which was attributed to the electron transition from interstitial zinc to interstitial oxygen point defects in ZnO. A minor shoulder peak was also observed at 710 nm, corresponding to red emission which was ascribed to the transition from conduction band of ZnO to oxygen vacancies in ZnO lattice. This study demonstrates a significant progress toward oxide materials based, defect-induced light emitting device with low-cost, low-temperature methods. PMID:26648420

A Phosphine-Free Route to Size-Adjustable CdSe and CdSe/CdS Core-Shell Quantum Dots for White-Light-Emitting Diodes.

PubMed

Zhang, Yugang; Li, Guopeng; Zhang, Ting; Song, Zihang; Wang, Hui; Zhang, Zhongping; Jiang, Yang

2018-03-01

The selenium dioxide was used as the precursor to synthesize wide-size-ranged CdSe quantum dots (2.4-5.7 nm) via hot-injection route. The CdSe quantum dots are featured with high crystalline, monodisperse, zinc blende structure and wide emission region (530-635 nm). In order to improve the stability and quantum yield, a phosphine-free single-molecular precursor approach is used to obtain CdSe/CdS core/shell quantum dots. The CdSe/CdS quantum dots are highly fluorescent with quantum yield up to 65%, and persist the good monodispersity and high crystallinity. Moreover, the quantum dots white light-emitting-diodes are fabricated by using the resultant red emission core/shell quantum dots and Y3Al5O12:Ce3+ yellow phosphors as color-conversion layers on a blue InGaN chip. The prepared light-emitting-diodes show good performance with CIE-1931 coordinated of (0.3583, 0.3349), an Ra of 92.9, and a Tc of 4410 K at 20 mA, which indicate that the combination of red-emission QDs and yellow phophors as a promising approach to obtain warm WLEDs with good color rendering.

Highly Efficient Spectrally Stable Red Perovskite Light-Emitting Diodes.

PubMed

Tian, Yu; Zhou, Chenkun; Worku, Michael; Wang, Xi; Ling, Yichuan; Gao, Hanwei; Zhou, Yan; Miao, Yu; Guan, Jingjiao; Ma, Biwu

2018-05-01

Perovskite light-emitting diodes (LEDs) have recently attracted great research interest for their narrow emissions and solution processability. Remarkable progress has been achieved in green perovskite LEDs in recent years, but not blue or red ones. Here, highly efficient and spectrally stable red perovskite LEDs with quasi-2D perovskite/poly(ethylene oxide) (PEO) composite thin films as the light-emitting layer are reported. By controlling the molar ratios of organic salt (benzylammonium iodide) to inorganic salts (cesium iodide and lead iodide), luminescent quasi-2D perovskite thin films are obtained with tunable emission colors from red to deep red. The perovskite/polymer composite approach enables quasi-2D perovskite/PEO composite thin films to possess much higher photoluminescence quantum efficiencies and smoothness than their neat quasi-2D perovskite counterparts. Electrically driven LEDs with emissions peaked at 638, 664, 680, and 690 nm have been fabricated to exhibit high brightness and external quantum efficiencies (EQEs). For instance, the perovskite LED with an emission peaked at 680 nm exhibits a brightness of 1392 cd m -2 and an EQE of 6.23%. Moreover, exceptional electroluminescence spectral stability under continuous device operation has been achieved for these red perovskite LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Efficacy of Inactivation of Human Enteroviruses by Multiple ...

EPA Pesticide Factsheets

Background: Ultraviolet (UV) light has been successfully used for treating a broad suite of pathogens without the concomitant formation of carcinogenic disinfection by-products (DBPs). However, conventional mercury UV lamps have some practical limitations in water treatment applications, such as the inefficiency of energy consumption and more importantly potential mercury contamination upon disposal of the lamps. The recent invention of a novel light-emitting-diodes (LED) device generating germicidal UV wavelengths could eliminate the aforementioned limitations. In this study, we investigated the efficacy of multiple-wavelength UV LEDs for inactivating USEPA contaminant candidate list (CCL) RNA enteroviruses.Methods: Of 12 enterovirus species, serotype representatives of the four human enteric species (enterovirus A-D) such as coxsackievirus A10 (CVA10), echovirus 30 (Echo30), poliovirus 1 (PV1), and enterovirus 70 (EV70) respectively were selected as testing RNA viruses. Bench-scale performance evaluation was conducted using a collimated beam (CB) apparatus with LEDs emitting at 260 nm, 280 nm, and the combination of 260|280 nm together, as well as a monochromatic low-pressure (LP) UV lamp at 254 nm for comparison. The CB tests were performed with mixed stocks of four viruses. Infectious virus concentrations were determined using an integrated cell culture reverse transcriptase quantitative PCR (ICC-RTqPCR).Results: The 260 nm LED was most effective at inactiva

Efficacy of Inactivation of Human Enteroviruses by Multiple ...

EPA Pesticide Factsheets

Ultraviolet (UV) light has been successfully used for treating a broad suite of pathogens without the concomitant formation of carcinogenic disinfection by-products (DBPs). However, conventional mercury UV lamps have some practical limitations in water treatment applications, such as the inefficiency of energy consumption and more importantly potential mercury contamination upon disposal of the lamps. The recent invention of a novel light-emitting-diodes (LED) device generating germicidal UV wavelengths could eliminate the aforementioned limitations. In this study, we investigated the efficacy of multiple-wavelength UV LEDs for inactivating USEPA contaminant candidate list (CCL) RNA enteroviruses. Of 12 enterovirus species, serotype representatives of the four human enteric species (enterovirus A-D) such as coxsackievirus A10 (CVA10), echovirus 30 (Echo30), poliovirus 1 (PV1), and enterovirus 70 (EV70) respectively were selected as testing RNA viruses. Bench-scale performance evaluation was conducted using a collimated beam (CB) apparatus with LEDs emitting at 260 nm, 280 nm, and the combination of 260|280 nm together, as well as a monochromatic low-pressure (LP) UV lamp at 254 nm for comparison. The CB tests were performed with mixed stocks of four viruses. Infectious virus concentrations were determined using an integrated cell culture reverse transcriptase quantitative PCR (ICC-RTqPCR). The 260 nm LED was most effective at inactivating all enteroviruses teste

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors.

PubMed

Shiu, Guo-Yi; Chen, Kuei-Ting; Fan, Feng-Hsu; Huang, Kun-Pin; Hsu, Wei-Ju; Dai, Jing-Jie; Lai, Chun-Feng; Lin, Chia-Feng

2016-07-01

InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n(+)-GaN) in the 12-period n(+)-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process. The central wavelength of the nanoporous DBR structure was located at 442.3 nm with a 57 nm linewidth and a 97.1% peak reflectivity. The effective cavity length (6.0λ), the effective penetration depth (278 nm) in the nanoporous DBR structure, and InGaN active layer matching to Fabry-Pérot mode order 12 were observed in the far-field photoluminescence radiative spectra. High electroluminescence emission intensity and line-width narrowing effect were measured in the DBR-LED compared with the non-treated LED structure. Non-linear emission intensity and line-width reducing effect, from 11.8 nm to 0.73 nm, were observed by increasing the laser excited power. Resonant cavity effect was observed in the InGaN LED with bottom nanoporous-DBR and top GaN/air interface.

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors

PubMed Central

Shiu, Guo-Yi; Chen, Kuei-Ting; Fan, Feng-Hsu; Huang, Kun-Pin; Hsu, Wei-Ju; Dai, Jing-Jie; Lai, Chun-Feng; Lin, Chia-Feng

2016-01-01

InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n+-GaN) in the 12-period n+-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process. The central wavelength of the nanoporous DBR structure was located at 442.3 nm with a 57 nm linewidth and a 97.1% peak reflectivity. The effective cavity length (6.0λ), the effective penetration depth (278 nm) in the nanoporous DBR structure, and InGaN active layer matching to Fabry-Pérot mode order 12 were observed in the far-field photoluminescence radiative spectra. High electroluminescence emission intensity and line-width narrowing effect were measured in the DBR-LED compared with the non-treated LED structure. Non-linear emission intensity and line-width reducing effect, from 11.8 nm to 0.73 nm, were observed by increasing the laser excited power. Resonant cavity effect was observed in the InGaN LED with bottom nanoporous-DBR and top GaN/air interface. PMID:27363290

The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes

PubMed Central

2011-01-01

In this article, the electroluminescence (EL) spectra of zinc oxide (ZnO) nanotubes/p-GaN light emitting diodes (LEDs) annealed in different ambients (argon, air, oxygen, and nitrogen) have been investigated. The ZnO nanotubes by aqueous chemical growth (ACG) technique on p-GaN substrates were obtained. The as-grown ZnO nanotubes were annealed in different ambients at 600°C for 30 min. The EL investigations showed that air, oxygen, and nitrogen annealing ambients have strongly affected the deep level emission bands in ZnO. It was concluded from the EL investigation that more than one deep level defect is involved in the red emission appearing between 620 and 750 nm and that the red emission in ZnO can be attributed to oxygen interstitials (Oi) appearing in the range from 620 nm (1.99 eV) to 690 nm (1.79 eV), and to oxygen vacancies (Vo) appearing in the range from 690 nm (1.79 eV) to 750 nm (1.65 eV). The annealing ambients, especially the nitrogen ambient, were also found to greatly influence the color-rendering properties and increase the CRI of the as - grown LEDs from 87 to 96. PMID:21711671

The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes.

PubMed

Alvi, N H; Ul Hasan, Kamran; Nur, Omer; Willander, Magnus

2011-02-10

In this article, the electroluminescence (EL) spectra of zinc oxide (ZnO) nanotubes/p-GaN light emitting diodes (LEDs) annealed in different ambients (argon, air, oxygen, and nitrogen) have been investigated. The ZnO nanotubes by aqueous chemical growth (ACG) technique on p-GaN substrates were obtained. The as-grown ZnO nanotubes were annealed in different ambients at 600°C for 30 min. The EL investigations showed that air, oxygen, and nitrogen annealing ambients have strongly affected the deep level emission bands in ZnO. It was concluded from the EL investigation that more than one deep level defect is involved in the red emission appearing between 620 and 750 nm and that the red emission in ZnO can be attributed to oxygen interstitials (Oi) appearing in the range from 620 nm (1.99 eV) to 690 nm (1.79 eV), and to oxygen vacancies (Vo) appearing in the range from 690 nm (1.79 eV) to 750 nm (1.65 eV). The annealing ambients, especially the nitrogen ambient, were also found to greatly influence the color-rendering properties and increase the CRI of the as - grown LEDs from 87 to 96.

Effects of cathode thickness and thermal treatment on the design of balanced blue light-emitting polymer device

NASA Astrophysics Data System (ADS)

Chin, Byung Doo; Duan, Lian; Kim, Moo-Hyun; Lee, Seong Taek; Chung, Ho Kyoon

2004-11-01

The interface between layered conjugated polymer and electrode is a most important factor to improve the performance and lifetime of polymeric light-emitting devices (PLEDs). In this work, a blue PLED with improved stability was achieved by the combination of optimized cathode structure as well as thermal treatment of light-emitting polymer (LEP). Experimental evidence of the initial luminance "settling in" stage was found to be dependent upon the cathode structure, while the long-term slope of luminance as a function of elapsed time is governed by the annealing conditions. Our study revealed the importance of extrinsic design of device for the improvement of PLED stability. Experimental data shows that a blue PLED annealed at 170°C and 6nm LiF at LiF /Ca/Al cathode retained the best lifetime, which can be explained by the improved polymer-metal interface and LEP's charge mobility.

Low-threshold voltage ultraviolet light-emitting diodes based on (Al,Ga)N metal-insulator-semiconductor structures

NASA Astrophysics Data System (ADS)

Liang, Yu-Han; Towe, Elias

2017-12-01

Al-rich III-nitride-based deep-ultraviolet (UV) (275-320 nm) light-emitting diodes are plagued with a low emission efficiency and high turn-on voltages. We report Al-rich (Al,Ga)N metal-insulator-semiconductor UV light-emitting Schottky diodes with low turn-on voltages of <3 V, which are about half those of typical (Al,Ga)N p-i-n diodes. Our devices use a thin AlN film as the insulator and an n-type Al0.58Ga0.42N film as the semiconductor. To improve the efficiency, we inserted a GaN quantum-well structure between the AlN insulator and the n-type Al x Ga1- x N semiconductor. The benefits of the quantum-well structure include the potential to tune the emission wavelength and the capability to confine carriers for more efficient radiative recombination.

A simple sub-nanosecond ultraviolet light pulse generator with high repetition rate and peak power.

PubMed

Binh, P H; Trong, V D; Renucci, P; Marie, X

2013-08-01

We present a simple ultraviolet sub-nanosecond pulse generator using commercial ultraviolet light-emitting diodes with peak emission wavelengths of 290 nm, 318 nm, 338 nm, and 405 nm. The generator is based on step recovery diode, short-circuited transmission line, and current-shaping circuit. The narrowest pulses achieved have 630 ps full width at half maximum at repetition rate of 80 MHz. Optical pulse power in the range of several hundreds of microwatts depends on the applied bias voltage. The bias voltage dependences of the output optical pulse width and peak power are analysed and discussed. Compared to commercial UV sub-nanosecond generators, the proposed generator can produce much higher pulse repetition rate and peak power.

A lighting assembly based on red and blue light-emitting diodes as a lighting source for space agriculture

NASA Astrophysics Data System (ADS)

Avercheva, Olga; Berkovich, Yuliy A.; Smolyanina, Svetlana; Bassarskaya, Elizaveta; Zhigalova, Tatiana; Ptushenko, Vasiliy; Erokhin, Alexei

Light-emitting diodes (LEDs) are a promising lighting source for space agriculture due to their high efficiency, longevity, safety, and other factors. Assemblies based on red and blue LEDs have been recommended in literature, although not all plants show sufficient productivity in such lighting conditions. Adding of green LEDs proposed in some works was aimed at psychological support for the crew, and not at the improvement of plant growth. We studied the growth and the state of the photosynthetic apparatus in Chinese cabbage (Brassica chinensis L.) plants grown under red (650 nm) and blue (470 nm) light-emitting diodes (LEDs). Plants grown under a high-pressure sodium lamp (HPS lamp) were used as a control. The plants were illuminated with two photosynthetic photon flux levels: nearly 400 µE and about 100 µE. Plants grown under LEDs with 400 µE level, as compared to control plants, showed lower fresh weight, edible biomass, growth rate, and sugar content. The difference in fresh weight and edible biomass was even more pronounced in plants grown with 100 µE level; the data indicate that the adaptability of the test plants to insufficient lighting decreased. Under LEDs, we observed the decreasing of root growth and the absence of transition to the flowering stage, which points to a change in the hormonal balance in plants grown in such lighting conditions. We also found differences in the functioning of the photosynthetic apparatus and its reaction to a low lighting level. We have concluded that a lighting assembly with red and blue LEDs only is insufficient for the plant growth and productivity, and can bring about alterations in their adaptive and regulatory mechanisms. Further studies are needed to optimize the lighting spectrum for space agriculture, taking into account the photosynthetic, phototropic and regulatory roles of light. Using white LEDs or adding far-red and green LEDs might be a promising approach.

Polyfluorene light-emitting devices and amorphous silicon:hydrogen TFT pixel circuits for active-matrix organic light-emitting displays

NASA Astrophysics Data System (ADS)

He, Yi

2000-10-01

Organic light-emitting devices (OLEDs) made of single-layer and double-layer polymer thin films have been fabricated and studied. The hole transporting (polymer A) and emissive (polymer B) polymers were poly(9,9' -dioctyl fluorene-2,7-diyl)-co-poly(diphenyl-p-tolyl-amine-4,4 '-diyl) and poly(9,9'-dioctyl fluorene-2,7-diyl)-co-poly(benzothiadiazole 2,5-diyl), respectively. The optical bandgaps of polymer A and B were 2.72 and 2.82 eV, respectively. The photoluminescence (PL) peaks for polymer A and B were 502 and 546 nm, respectively. The electroluminescence (EL) peak for polymer B was 547 nm. No EL has been observed from polymer A single layer OLEDs. To obtain the spectral distribution of the emission properties of the light-emitting devices, a new light-output measurement technique was developed. Using this technique, the spectral distribution of the luminance, radiance, photon density emission can be obtained. Moreover, the device external quantum efficiency calculated using this technique is accurate and insensitive to the light emission spectrum shape. Organic light-emitting devices have been fabricated and studied on both glass and flexible plastic substrates. The OLEDs showed a near-linear relationship between the luminance and the applied current density over four orders of magnitude. For the OLEDs fabricated on the glass substrate, luminance ˜9,300 cd/m2, emission efficiency ˜14.5 cd/A, luminescence power efficiency ˜2.26 lm/W, and external quantum efficiency ˜3.85% have been achieved. For the OLEDs fabricated on the flexible plastic substrates, both aluminum and calcium were used as cathode materials. The achieved maximum OLED luminance, emission efficiency, luminescence power efficiency, and external quantum efficiency were ˜13,000 cd/m2, ˜66.1 cd/A, ˜17.2 lm/W, and 16.7%, respectively. To make an active-matrix organic light-emitting display (AM-OLED), a two-TFT pixel electrode circuit was designed and fabricated based on amorphous silicon TFT technology. This circuit was capable of providing continuous pixel excitation and a simple driving scheme. However, it showed an output current variation of ˜40% to 80% due to the drive TFT threshold voltage (V th) shift after long-term operation. To improve the pixel circuit electrical reliability, a four-TFT pixel electrode circuit was proposed and fabricated. This circuit only showed an output current variation <1% for the high currents (>0.5muA) even when a TFT Vth shift as large as 3V was present. This four-TFT pixel electrode circuit was used to fabricate small size active-matrix monochrome organic light-emitting display.

White-light phosphorescence emission from a single molecule: application to OLED.

PubMed

Bolink, Henk J; De Angelis, Filippo; Baranoff, Etienne; Klein, Cédric; Fantacci, Simona; Coronado, Eugenio; Sessolo, Michele; Kalyanasundaram, K; Grätzel, Michael; Nazeeruddin, Md K

2009-08-21

A simple mononuclear cyclometallated iridium(iii) complex exhibits white photo- and electro- luminescence in the wavelength range from 440 to 800 nm, which originates from a single emitting excited state of mixed character.

Cadmium-free quantum dot light emitting devices: energy-transfer realizing pure blue emission.

PubMed

Ji, Wenyu; Jing, Pengtao; Fan, Yi; Zhao, Jialong; Wang, Yunjun; Kong, Xianggui

2013-01-01

In this study, deep blue, pure electroluminescence (EL) at 441.5 nm from a ZnSe/ZnS quantum dot light-emitting device (QD-LED) is obtained by using poly (4-butylphenyl-diphenyl-amine) (poly-TPD) as the hole-transport layer (HTL) to open up the channel for energy transfer from poly-TPD to QDs. The emission originating from HTL is observed in the QD-LED with N,N'-bis (tolyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine functionalized with two styryl groups (2-TPD) as the HTL due to inefficient energy-transfer from 2-TPD to QDs. The poly-TPD based device exhibits color-saturated blue emission with a narrow spectral bandwidth of full width at half maximum (~17.2 nm). These results explore the operating mechanism of the QD EL and signify a remarkable progress in deep blue QD-LEDs based on environmental-friendly QD materials.

Spectroscopic investigation and luminescent properties of Schiff base metal complex for OLED

NASA Astrophysics Data System (ADS)

Gondia, N. K.; Priya, J.; Sharma, S. K.

2018-05-01

Organic light emitting diode (OLED) display technology has demonstrated high efficiency and brightness, is leading to a strong commercial interest. One of the remaining problems with the OLED technology is efficiency and colour saturation. The efficiency of OLED devices can be improved by doping the host organic layer with a suitable phosphorescent material in the emissive layer. We have synthesized a Schiff base zinc metal complex for OLEDs applications. Metal complex was characterized by FTIR, HNMR technique. PL emission spectra were recorded by keeping excitation wavelength fixed at 240 nm. A strong intense emission peak was observed at 410 nm. CIE chromaticity colour coordinates were observed at x =0.239 & y = 0.159. HOMO/LUMO energy gap were found to be -0.223 and -0.067 respectively for prepared zinc metal complex. It could be considered as a good light emitting phosphor material for possible application as emissive layer in OLEDs.

Efficient perovskite light-emitting diodes featuring nanometre-sized crystallites

NASA Astrophysics Data System (ADS)

Xiao, Zhengguo; Kerner, Ross A.; Zhao, Lianfeng; Tran, Nhu L.; Lee, Kyung Min; Koh, Tae-Wook; Scholes, Gregory D.; Rand, Barry P.

2017-01-01

Organic-inorganic hybrid perovskite materials are emerging as highly attractive semiconductors for use in optoelectronics. In addition to their use in photovoltaics, perovskites are promising for realizing light-emitting diodes (LEDs) due to their high colour purity, low non-radiative recombination rates and tunable bandgap. Here, we report highly efficient perovskite LEDs enabled through the formation of self-assembled, nanometre-sized crystallites. Large-group ammonium halides added to the perovskite precursor solution act as a surfactant that dramatically constrains the growth of 3D perovskite grains during film forming, producing crystallites with dimensions as small as 10 nm and film roughness of less than 1 nm. Coating these nanometre-sized perovskite grains with longer-chain organic cations yields highly efficient emitters, resulting in LEDs that operate with external quantum efficiencies of 10.4% for the methylammonium lead iodide system and 9.3% for the methylammonium lead bromide system, with significantly improved shelf and operational stability.

A comparative study of the influence of nickel oxide layer on the FTO surface of organic light emitting diode

NASA Astrophysics Data System (ADS)

Saikia, Dhrubajyoti; Sarma, Ranjit

2018-03-01

The influence of thin layer of nickel oxide (NiO) over the fluorine-doped tin oxide (FTO) surface on the performance of Organic light-emitting diode (OLED) is reported. With an optimal thickness of NiO (10 nm), the luminance efficiency is found to be increased as compared to the single FTO OLED. The performance of OLED is studied by depositing NiO films at different thicknesses on the FTO surface and analyzed their J-V and L-V characteristics. Further analysis is carried out by measuring sheet resistance and optical transmittance. The surface morphology is studied with the help of FE-SEM images. Our results indicate that NiO (10 nm) buffer layer is an excellent choice to increase the efficiency of FTO based OLED devices within the charge tunneling region. The maximum value of current efficiency is found to be 7.32 Cd/A.

Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure

NASA Astrophysics Data System (ADS)

Zhao, Guijuan; Wang, Lianshan; Li, Huijie; Meng, Yulin; Li, Fangzheng; Yang, Shaoyan; Wang, Zhanguo

2018-01-01

Semi-polar (11-22) InGaN multiple quantum well (MQW) green light-emitting diode (LED) structures have been realized by metal-organic chemical vapor deposition on an m-plane sapphire substrate. By introducing double GaN buffer layers, we improve the crystal quality of semi-polar (11-22) GaN significantly. The vertical alignment of the diffraction peaks in the (11-22) X-ray reciprocal space mapping indicates the fully strained MQW on the GaN layer. The photoluminescence spectra of the LED structure show stronger emission intensity along the [1-100] InGaN/GaN direction. The electroluminescence emission of the LED structure is very broad with peaks around 550 nm and 510 nm at the 100 mA current injection for samples A and B, respectively, and exhibits a significant blue-shift with increasing drive current.

A spectrally tunable all-graphene-based flexible field-effect light-emitting device

NASA Astrophysics Data System (ADS)

Wang, Xiaomu; Tian, He; Mohammad, Mohammad Ali; Li, Cheng; Wu, Can; Yang, Yi; Ren, Tian-Ling

2015-07-01

The continuous tuning of the emission spectrum of a single light-emitting diode (LED) by an external electrical bias is of great technological significance as a crucial property in high-quality displays, yet this capability has not been demonstrated in existing LEDs. Graphene, a tunable optical platform, is a promising medium to achieve this goal. Here we demonstrate a bright spectrally tunable electroluminescence from blue (~450 nm) to red (~750 nm) at the graphene oxide/reduced-graphene oxide interface. We explain the electroluminescence results from the recombination of Poole-Frenkel emission ionized electrons at the localized energy levels arising from semi-reduced graphene oxide, and holes from the top of the π band. Tuning of the emission wavelength is achieved by gate modulation of the participating localized energy levels. Our demonstration of current-driven tunable LEDs not only represents a method for emission wavelength tuning but also may find applications in high-quality displays.

High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Y.; Li, X.; Xu, P.

2015-02-02

We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 μA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 μA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecturemore » offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.« less

Photoluminescence and afterglow luminescence properties of a green-emitting Na2BeGeO4:Mn2+ phosphor

NASA Astrophysics Data System (ADS)

Lu, Jie; Shen, Linjiang

2018-07-01

Recently, developing free rare-earth (RE) doped afterglow phosphors has received great attentions in the lighting field. In this work, we prepare and report a RE-free phosphor, Na2BeGeO4:Mn2+, which can simultaneously emit the green fluorescence and afterglow luminescence upon excitation at UV light. Our results reveal that the as-prepared samples crystallize in orthorhombic type with the space group of Pmn21 (31). The green emission is a broad band centered at 525 nm, corresponds to the 4T1(4G)-6A1(6S) transition of Mn2+ ions. After exposing to a 254 nm UV lamp for 10 min, the green afterglow luminescence seen with naked eyes can last more than 5 h. Together with the structural analysis and thermoluminescence (TL) spectra, the afterglow luminescence mechanism is also discussed in this work.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chu, Yaoqing; School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418; Zhang, Qinghong

A new silicate garnet phosphor, Lu{sub 2−x}CaMg{sub 2}Si{sub 2.9}Ti{sub 0.1}O{sub 12}:xCe was synthesized by a high temperature solid-state reaction under reductive atmosphere. X-ray diffraction (XRD) showed that the powder was pure garnet phase. The emission and excitation spectrum indicated that the Lu{sub 2−x}CaMg{sub 2}Si{sub 2.9}Ti{sub 0.1}O{sub 12}:xCe phosphors could absorb blue light in the spectral range of 400–550 nm efficiently and exhibit bright yellow–orange emission in the range of 520–750 nm. With the increase of Ce{sup 3+} concentration, the emission band of Ce{sup 3+} showed a red shift. Interestingly, the concentration quenching occurred when the Ce{sup 3+} concentration exceeded 4more » mol%. The temperature-dependent luminescent properties of the phosphors were discussed and the Lu{sub 1.96}CaMg{sub 2}Si{sub 2.9}Ti{sub 0.1}O{sub 12}:0.04Ce phosphors showed good performances in color temperature (2430 K) and potential applications for warm white LEDs. - Graphical Abstract: This image shows that the phosphor of Lu{sub 1.96}CaMg{sub 2}Si{sub 2.9}Ti{sub 0.1}O{sub 12}:0.04Ce can generate a uniform yellow tint under natural light illumination and emit orange–red light when excited by blue light. With a fixed 467 nm emission light, warm white light can be produced by this phosphor, which indicates that the phosphor is potentially applicable in warm white light emitting diodes based on GaN chips. - Highlights: • A new silicate garnet phosphor was synthesized by solid-state method. • Secondary phases can be avoided when a small amount of Si{sup 4+} were replaced by Ti{sup 4+}. • A broad emission band of Ce{sup 3+} in the phosphors was described. • The phosphors are potentially applicable in warm white light emitting diodes.« less

1.319 μm excited intense 800 nm frequency upconversion emission in Tm{sup 3+}-doped fluorogermanate glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gouveia-Neto, A. S.; Vermelho, M. V. D.; Gouveia, E. A.

2015-11-23

Generation of near-infrared light within the first biological optical window via frequency upconversion in Tm{sup 3+}-doped PbGeO{sub 3}-PbF{sub 2}-CdF{sub 2} glass excited within the second biological window at 1.319 μm is reported. The upconversion emission at 800 nm is the sole light signal observed in the entire ultraviolet-visible-near-infrared spectral region making it possible obtaining high contrast imaging. The dependence of the 800 nm signal upon the sample temperature was investigated and results showed an increase by a factor of ×2.5 in the 30–280 °C range. Generation of detectable 690 nm for temperatures above 100 °C in addition to the intense 800 nm main signal was also observed.more » The proposed excitation mechanism for the 800 nm thulium emitting level is assigned to a multiphonon-assisted excitation from the ground-state {sup 3}H{sub 6} to the {sup 3}H{sub 5} excited-state level, a rapid relaxation to the {sup 3}F{sub 4} level and followed by an excited-state absorption of the pump photons mediated by multiphonons connecting the {sup 3}F{sub 4} level to the {sup 3}H{sub 4} emitting level.« less

Growth and photomorphogenesis of pepper plants under red light-emitting diodes with supplemental blue or far-red lighting

NASA Technical Reports Server (NTRS)

Brown, C. S.; Schuerger, A. C.; Sager, J. C.

1995-01-01

Light-emitting diodes (LEDs) are a potential irradiation source for intensive plant culture systems and photobiological research. They have small size, low mass, a long functional life, and narrow spectral output. In this study, we measured the growth and dry matter partitioning of 'Hungarian Wax' pepper (Capsicum annuum L.) plants grown under red LEDs compared with similar plants grown under red LEDs with supplemental blue or far-red radiation or under broad spectrum metal halide (MH) lamps. Additionally, we describe the thermal and spectral characteristics of these sources. The LEDs used in this study had a narrow bandwidth at half peak height (25 nm) and a focused maximum spectral output at 660 nm for the red and 735 nm for the far-red. Near infrared radiation (800 to 3000 nm) was below detection and thermal infrared radiation (3000 to 50,000 nm) was lower in the LEDs compared to the MH source. Although the red to far-red ratio varied considerably, the calculated phytochrome photostationary state (phi) was only slightly different between the radiation sources. Plant biomass was reduced when peppers were grown under red LEDs in the absence of blue wavelengths compared to plants grown under supplemental blue fluorescent lamps or MH lamps. The addition of far-red radiation resulted in taller plants with greater stem mass than red LEDs alone. There were fewer leaves under red or red plus far-red radiation than with lamps producing blue wavelengths. These results indicate that red LEDs may be suitable, in proper combination with other wavelengths of light, for the culture of plants in tightly controlled environments such as space-based plant culture systems.

Size-controllable nanopyramids photonic crystal selectively grown on p-GaN for enhanced light-extraction of light-emitting diodes.

PubMed

Du, Chengxiao; Wei, Tongbo; Zheng, Haiyang; Wang, Liancheng; Geng, Chong; Yan, Qingfeng; Wang, Junxi; Li, Jinmin

2013-10-21

Size-controllable p-GaN hexagonal nanopyramids (HnPs)-photonic crystal (PhC) structures were selectively grown on flat p-GaN layer for the elimination of total internal reflection of light-emitting diodes (LEDs). The LEDs with HnPs-PhC of 46.3% bottom fill factor (PhC lattice constant is 730 nm) showed an improved light output power by 99.9% at forward current of 350 mA compared to the reference LEDs with flat p-GaN layer. We confirmed the effect of HnPs-PhC with different bottom fill factors and the effect of nanopyramid-shaped and nanocolumn-shaped PhC on the light-extraction of LEDs was also investigated by using three-dimensional finite-difference time-domain simulations.

Characterization of an Optical Device with an Array of Blue Light Emitting Diodes LEDS for Treatment of Neonatal Jaundice.

NASA Astrophysics Data System (ADS)

Sebbe, Priscilla Fróes; Villaverde, Antonio G. J. Balbin; Nicolau, Renata Amadei; Barbosa, Ana Maria; Veissid, Nelson

2008-04-01

Phototherapy is a treatment that consists in irradiating a patient with light of high intensity, which promotes beneficial photochemical transformations in the irradiated area. The phototherapy for neonates is applied to break down the bilirubin, an organic pigment that is a sub product of the erythrocytes degradation, and to increase its excretion by the organism. Neonates should be irradiated with light of wavelength that the bilirubin can absorb, and with spectral irradiances between 4 and 16 μW/cm2/nm. The efficiency of the treatment depends on the irradiance and the area of the body that is irradiated. A convenient source of light for treatment of neonatal jaundice is the blue Light Emitter Diode (LED), emitting in the range of 400 to 500 nm, with power of the order of 10-150 mW. Some of the advantages for using LEDS are: low cost, operating long lifetime (over 100,000 hours), narrow emission linewith, low voltage power supply requirement and low heating. The aim of this work was to build and characterize a device for phototherapy treatment of neonatal jaundice. This consists of a blanket with 88 blue LEDs (emission peak at 472 nm), arranged in an 8×11 matrix, all connected in parallel and powered by a 5V-2A power supply. The device was characterized by using a spectroradiometer USB2000 (Ocean Optics Inc, USA), with a sensitivity range of 339-1019 nm. For determination of light spatial uniformity was used a calibrated photovoltaic sensor for measuring light intensity and mapping of the light intensity spatial distribution. Results indicate that our device shows a uniform spatial distribution for distances from the blanket larger than 10 cm, with a maximum of irradiance at such a distance. This device presenting a large and uniform area of irradiation, efficient wavelength emission and high irradiance seems to be promising for neonates' phototherapy treatment.

Activation of Wnt/β-catenin signaling is involved in hair growth-promoting effect of 655-nm red light and LED in in vitro culture model.

PubMed

Han, Le; Liu, Ben; Chen, Xianyan; Chen, Haiyan; Deng, Wenjia; Yang, Changsheng; Ji, Bin; Wan, Miaojian

2018-04-01

Activation of the Wnt/β-catenin signaling pathway plays an important role in hair follicle morphogenesis and hair growth. Recently, low-level laser therapy (LLLT) was evaluated for stimulating hair growth in numerous clinical studies, in which 655-nm red light was found to be most effective and practical for stimulating hair growth. We evaluated whether 655-nm red light + light-emitting diode (LED) could promote human hair growth by activating Wnt/β-catenin signaling. An in vitro culture of human hair follicles (HFs) was irradiated with different intensities of 655-nm red light + LED, 21 h7 (an inhibitor of β-catenin), or both. Immunofluorescence staining was performed to assess the expression of β-catenin, GSK3β, p-GSK3β, and Lef1 in the Wnt/β-catenin signaling. The 655-nm red light + LED not only enhanced hair shaft elongation, but also reduced catagen transition in human hair follicle organ culture, with the greatest effectiveness observed at 5 min (0.839 J/cm 2 ). Additionally, 655-nm red light + LED enhanced the expression of β-catenin, p-GSK3β, and Lef1, signaling molecules of the Wnt/β-catenin pathway, in the hair matrix. Activation of Wnt/β-catenin signaling is involved in hair growth-promoting effect of 655-nm red light and LED in vitro and therefore may serve as an alternative therapeutic option for alopecia.

Wavelength dispersion characteristics of integrated silicon avalanche LEDs: potential applications in futuristic on-chip micro- and nano-biosensors

NASA Astrophysics Data System (ADS)

Okhai, Timothy A.; Snyman, Lukas W.; Polleux, Jean-Luc

2016-02-01

Si Av LEDs are easily integrated in on-chip integrated circuitry. They have high modulation frequencies into the GHz range and can be fabricated to sub-micron dimensions. Due to subsurface light generation in the silicon device itself, and the high refractive index differences between silicon and the device environment, the exiting light radiation has interesting dispersion characteristics. Three junction micro p+-np+ Silicon Avalanche based Light Emitting Devices (Si Av LEDs) have been analyzed in terms of dispersion characteristics, generally resulting in different wavelengths of light (colors) being emitted at different angles and solid angles from the surfaces of these devices. The emission wavelength is in the 450 - 850 nm range. The devices are of micron dimension and operate at 8 - 10V, 1μA - 2mA. The emission spot sizes are about 1 micron square. Emission intensities are up to 500 nW.μm-2. The observed dispersion characteristics range from 0.05 degrees per nm per degree at emission angle of 5 degrees, to 0.15 degrees per nm at emission angles of 30 degrees. It is believed that the dispersion characteristics can find interesting and futuristic on-chip electro-optic applications involving particularly a ranging from on chip micro optical wavelength dispersers, communication de-multiplexers, and novel bio-sensor applications. All of these could penetrate into the nanoscale dimensions.

Light Emission Intensities of Luminescent Y2O3:Eu and Gd2O3:Eu Particles of Various Sizes

PubMed Central

Adam, Jens; Metzger, Wilhelm; Koch, Marcus; Rogin, Peter; Coenen, Toon; Atchison, Jennifer S.; König, Peter

2017-01-01

There is great technological interest in elucidating the effect of particle size on the luminescence efficiency of doped rare earth oxides. This study demonstrates unambiguously that there is a size effect and that it is not dependent on the calcination temperature. The Y2O3:Eu and Gd2O3:Eu particles used in this study were synthesized using wet chemistry to produce particles ranging in size between 7 nm and 326 nm and a commercially available phosphor. These particles were characterized using three excitation methods: UV light at 250 nm wavelength, electron beam at 10 kV, and X-rays generated at 100 kV. Regardless of the excitation source, it was found that with increasing particle diameter there is an increase in emitted light. Furthermore, dense particles emit more light than porous particles. These results can be explained by considering the larger surface area to volume ratio of the smallest particles and increased internal surface area of the pores found in the large particles. For the small particles, the additional surface area hosts adsorbates that lead to non-radiative recombination, and in the porous particles, the pore walls can quench fluorescence. This trend is valid across calcination temperatures and is evident when comparing particles from the same calcination temperature. PMID:28336860

High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111)

NASA Astrophysics Data System (ADS)

Li, Zengcheng; Liu, Legong; Huang, Yingnan; Sun, Qian; Feng, Meixin; Zhou, Yu; Zhao, Hanmin; Yang, Hui

2017-07-01

High-power AlGaN-based 385 nm near-ultraviolet light-emitting diodes (UVA-LEDs) grown on Si(111) substrates are reported. The threading dislocation (TD) density of AlGaN was reduced by employing an Al-composition step-graded AlN/AlGaN multilayer buffer. V-shaped pits were intentionally incorporated into the active region to screen the carriers from the nonradiative recombination centers (NRCs) around the TDs and to facilitate hole injection. The light extraction efficiency was enhanced by the surface roughening of a thin-film (TF) vertical chip structure. The as-fabricated TF-UVA-LED exhibited a light output power of 960 mW at 500 mA, corresponding to an external quantum efficiency of 59.7%.

Dependence of Laminar Flow Fluctuation on Indium Composition in In0.07GaAs/GaAs Quantum Wells for 940-nm Infrared Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Kim, Dae-Kwang; Lee, Hyung-Joo; An, Won-Chan; Kim, Hong-Gun; Kwac, Lee-Ku

2018-05-01

The effect of laminar flow fluctuation on the indium composition of In0.07GaAs quantum wells was investigated in order to obtain a higher output power from infrared lighting-emitting diodes (IR-LEDs) having a 940-nm wavelength. By controlling the injection pressure, we obtained various laminar flow conditions. Through subsequent photoluminescence (PL) and X-ray diffraction (XRD) measurements, a noticeable improvement in the optical and the crystalline characteristics of the In0.07GaAs quantum wells was observed at an optimum laminar flow. This result could be attributed to a reduction of non-crystallization in InGaAs quantum wells that had their indium composition improved via the optimized laminar flow. Overall, a significantly improved output power (11.2 mW) was obtained from a 940-nm IR-LED chip fabricated at an optimum laminar flow of 500 sccm, and a remarkable increase of approximately 250% was displayed compared to a conventional chip (3.9 mW) fabricated at a laminar flow of 100 sccm.

Control of resonant wavelength from organic light-emitting materials by use of a Fabry-Perot microcavity structure.

PubMed

Jung, Boo Young; Kim, Nam Young; Lee, Changhee; Hwangbo, Chang Kwon; Seoul, Chang

2002-06-01

We report the fabrication of Fabry-Perot microcavity structures with the organic light-emitting material tris-(8-hydroxyquinoline) aluminum (Alq3) and derive their optical properties by measuring their photoluminescence (PL) and absorption. Silver and a TiO2-SiO2 multilayer were used as metal and dielectric reflectors, respectively, in a Fabry-Perot microcavity structure. Three types of microcavity were prepared: type A consisted of [air[Ag[Alq3]Ag]glass]; type B, of [air[dielectric[Alq3]dielectric]glass]; and type C, of [air[Ag[Alq2]dielectric]glass]. A bare Alq3 film of [air[Alq3]glass] had its PL peak near 514 nm, and its full width at half-maximum (FWHM) was 80 nm. The broad FWHM of a bare Alq3 film was reduced to 15-27.5, 7-10.5, and 16-16.6 nm for microcavity types A, B, and C, respectively. Also, we could control the PL peak of the microcavity structure by changing the spacer thickness, the amount of phase change on reflection, and the angle of incidence.

Structure, luminescence and thermal quenching properties of Eu doped Sr2-xBaxSi5N8 red phosphors

NASA Astrophysics Data System (ADS)

Liu, Y. H.; Chen, L.; Zhou, X. F.; Liu, R. H.; Zhuang, W. D.

2017-02-01

Eu2+ doped Sr2-xBaxSi5N8 phosphors were synthesized at 1610 ℃ for 4 h via the solid-state reaction method. The XRD results confirm that the complete solid solutions are formed. With the increase of x, the emission spectra show an obvious blue-shift from 610 nm to 585 nm under the excitation of 460 nm. The color tone can be tuned from yellow to red. The corresponding mechanism for the blue-shift of peak-wavelength is studied in detail. The results of decomposed Gaussian spectra and fluorescence lifetime show that the local coordination structure surrounding activator ions changes with increasing x value. It is found that the probability of Eu occupying Sr1 and Sr2 site is dependent on Ba/Sr ratio. The variation of thermal quenching properties and the corresponding mechanism is discussed in detail. The results indicate that Eu2+ doped Sr2-xBaxSi5N8 is a promising orange red-emitting phosphor for near UV or blue light-pumped white light-emitting-diodes (wLEDs).

A new orange emitting luciferase from the Southern-Amazon Pyrophorus angustus (Coleoptera: Elateridae) click-beetle: structure and bioluminescence color relationship, evolutional and ecological considerations.

PubMed

Amaral, Danilo T; Oliveira, Gabriela; Silva, Jaqueline R; Viviani, Vadim R

2016-08-31

Bioluminescent click-beetles display a wide variation of bioluminescence colors ranging from green to orange, including an unusual intra-specific color variation in the Jamaican Pyrophorus plagiophthalamus. Recently, we collected individuals of the Pyrophorus angustus species from the Southern Amazon forest, in Brazil, which displays an orange light emitting abdominal lantern. This species was also previously described from Central America, but displaying a bioluminescence spectrum from 536 nm (dorsal) to 578 nm (ventral). The biogeographic variation of the bioluminescence color in this species could be an adaptation to environmental reflectance and inter/intraspecific sexual competition. Here, we cloned, sequenced, characterized and performed site-direct mutagenesis of this new orange emitting luciferase. The in vitro luciferase spectrum displayed a peak at 594 nm, KM values for ATP and d-luciferin of 160 μM and 17 μM, respectively, and an optimum pH of approximately 8.5. Comparative multialignment and site-directed mutagenesis using different color emitting click-beetle luciferases from P. angustus, Fulgeochlizus bruchi and Pyrearinus termitilluminans luciferases cloned by our group showed an integral role of residue 247 in bioluminescence color modulation.

Increased fibroblast proliferation and activity after applying intense pulsed light 800-1200 nm.

PubMed

Cuerda-Galindo, E; Díaz-Gil, G; Palomar-Gallego, M A; Linares-GarcíaValdecasas, R

2015-03-01

Light devices emitting near infrared have been shown to be highly effective for the skin rejuvenation but biochemical and molecular mechanism or optimum dose treatment are not well-known. In our study we try to elucidate why systems emitting near infrared produce skin improvement such as fibroblasts proliferation, increase in gene expression or extracellular matrix (ECM) protein production. 1BR3G human skin fibroblasts were used to test the effects of an intense pulsed light device emitting with an 800-1200 nm filter (MiniSilk FT manufactured by Deka(®)). In our protocol, fibroblasts were irradiated twice successively with a 10 Hz frequency, with a total fluence up to 60 J/cm(2) for 15s each pass. After incubating for 48 h, fibroblasts were harvested from the culture plates to test cell proliferation by flow cytometer. To determine changes in gene expression (mRNA levels for collagen types I and III and metalloproteinase 1 (MMP-1)) and protein production (hyaluronic acid, versican and decorin) tests were performed after irradiation. After 48 h irradiation, 1BR3G human skin fibroblasts were observed to proliferate at a fast rate. The study of ECM macromolecules production using ELISA showed an increase of hyaluronic acid and versican production but no changes were observed for decorin. With RT-PCR assays, an increase in mRNA for collagen type I, type III and MMP-1 were observed. Intense pulsed light emitting near infrared applied in vitro cultured cells increases fibroblasts proliferation and activity, which can be a possible mechanism of action for these devices in aging skin treatment. Copyright © 2014 Elsevier GmbH. All rights reserved.

Stacking multiple connecting functional materials in tandem organic light-emitting diodes

PubMed Central

Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

2017-01-01

Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency. PMID:28225028

Stacking multiple connecting functional materials in tandem organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

2017-02-01

Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency.

Combustion synthesis and luminescence properties of yellow-emitting phosphors Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xia, Zhiguo, E-mail: xiazg426@yahoo.com.cn; Liao, Libing, E-mail: lbliao@cugb.edu.cn; Zhang, Zepeng

2012-02-15

Graphical abstract: A yellow-emitting phosphor Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} was firstly synthesized by the solution-combustion method. The photoluminescence excitation and emission spectra, temperature dependence of luminescence intensity, and luminescence lifetime of the phosphor were investigated. Highlights: Black-Right-Pointing-Pointer Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} phosphor was synthesized by a solution-combustion method. Black-Right-Pointing-Pointer Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} showed an intense yellow emission band centered at 569 nm with the CIE coordinate of (0.453, 0.526). Black-Right-Pointing-Pointer The temperature dependent luminescence property and mechanism of Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} were studied. -- Abstract: Yellow-emitting phosphor Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} was synthesized by a solution-combustion method. Themore » phase structure and microstructure were determined by the X-ray diffraction (XRD) and scanning electron microscope (SEM) analysis, respectively. The as-prepared Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} phosphor absorbed near ultraviolet and blue light of 320-500 nm, and showed an intense yellow emission band centered at 569 nm with the CIE coordinate of (0.453, 0.526). The lifetime of Eu{sup 2+} ions in Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} phosphor was measured, furthermore the temperature dependent luminescence property and mechanism were studied, which also testified that the present phosphor had a promising potential for white light-emitting diodes.« less

Frequency-Downconversion Stability of PMMA Coatings in Hybrid White Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Caruso, Fulvio; Mosca, Mauro; Rinella, Salvatore; Macaluso, Roberto; Calì, Claudio; Saiano, Filippo; Feltin, Eric

2016-01-01

We report on the properties of a poly(methyl methacrylate)-based coating used as a host for an organic dye in hybrid white light-emitting diodes. The device is composed by a pump source, which is a standard inorganic GaN/InGaN blue light-emitting diode (LED) emitting at around 450 nm, and a spin-coated conversion layer making use of Lumogen® F Yellow 083. Under prolonged irradiation, the coating exhibits significant bleaching, thus degrading the color rendering performance of the LED. We present experimental results that confirm that the local temperature rise of the operating diode does not affect the conversion layer. It is also proven that, during the test, the photostability of the organic dye is compromised, resulting in a chromatic shift from Commission Internationale de l'Eclairage (CIE) ( x; y) coordinates (0.30;0.39) towards the color of the pump (0.15;0.04). Besides photodegradation of the dye, we address a phenomenon attributed to modification of the polymer matrix activated by the LED's blue light energy as confirmed by ultraviolet-visible and Fourier-transform infrared spectroscopic analyses. Three methods for improving the overall stability of the organic coating are presented.

The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

NASA Astrophysics Data System (ADS)

Zhang, Yonghui; Wei, Tongbo; Wang, Junxi; Lan, Ding; Chen, Yu; Hu, Qiang; Lu, Hongxi; Li, Jinmin

2014-02-01

Self-assembly SiO2 nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, the external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period.

Three-peak standard white organic light-emitting devices for solid-state lighting

NASA Astrophysics Data System (ADS)

Guo, Kunping; Wei, Bin

2014-12-01

Standard white organic light-emitting device (OLED) lighting provides a warm and comfortable atmosphere and shows mild effect on melatonin suppression. A high-efficiency red OLED employing phosphorescent dopant has been investigated. The device generates saturated red emission with Commission Internationale de l'Eclairage (CIE) coordinates of (0.66, 0.34), characterized by a low driving voltage of 3.5 V and high external quantum efficiency of 20.1% at 130 cd m-2. In addition, we have demonstrated a two-peak cold white OLED by combining with a pure blue emitter with the electroluminescent emission of 464 nm, 6, 12-bis{[N-(3,4-dimethylpheyl)-N-(2,4,5-trimethylphenyl)]} chrysene (BmPAC). It was found that the man-made lighting device capable of yielding a relatively stable color emission within the luminance range of 1000-5000 cd m-2. And the chromaticity coordinates, varying from (0.25, 0.21) to (0.23, 0.21). Furthermore, an ultrathin layer of green-light-emitting tris (2-phenylpyridinato)iridium(Ⅲ) Ir(ppy)3 in the host material was introduced to the emissive region for compensating light. By appropriately controlling the layer thickness, the white light OLED achieved good performance of 1280 cd m-2 at 5.0 V and 5150 cd m-2 at 7.0 V, respectively. The CIE coordinates of the emitted light are quite stable at current densities from 759 cd m-2 to 5150 cd m-2, ranging from (0.34, 0.37) to (0.33, 0.33).

Optimization of hybrid blue organic light-emitting diodes based on singlet and triplet exciton diffusion length

NASA Astrophysics Data System (ADS)

Lee, Song Eun; Lee, Ho Won; Lee, Jae Woo; Hwang, Kyo Min; Park, Soo Na; Yoon, Seung Soo; Kim, Young Kwan

2015-06-01

The hybrid blue organic light-emitting diodes (HB OLEDs) with triplet harvesting (TH) structures within an emitting layer (EML) are fabricated with fluorescent and phosphorescent EMLs. The TH is to transfer triplet excitons from fluorescence to phosphorescence, where they can decay radiatively. Remarkably, the half-decay lifetime of a hybrid blue device with fluorescent and phosphorescent EML thickness of 5 and 25 nm, measured at an initial luminance of 500 cd/m2, has improved twice than that of using a conventional structure. Additionally, the blue device’s efficiency improved. We attribute this improvement to the efficient triplet excitons energy transfer and the optimized distribution of the EML which depends on singlet and triplet excitons diffusion length that occurs within each the EML.

Bactericidal effect of the photocatalystic reaction of titanium dioxide using visible wavelengths on Streptococcus mutans biofilm.

PubMed

Kim, Chan-Hee; Lee, Eun-Song; Kang, Si-Mook; de Josselin de Jong, Elbert; Kim, Baek-Il

2017-06-01

The aim of this study was to determine the effect of titanium dioxide (TiO 2 ) photocatalysis induced by the application of clinically acceptable visible light at 405nm on the growth of Streptococcus mutans biofilms. S. mutans biofilms were grown on a hydroxyapatite (HA) disk and deposited in a rutile-type TiO 2 solution at a concentration of 0.1mg/mL. TiO 2 photocatalysis was measured for exposure to visible light (405nm) and ultraviolet (UV) light (254nm) produced by light-emitting diodes for 10, 20, 30, and 40min. After two treatments, the number of colonies formed in the final S. mutans biofilm on the HA disk were measured to confirm their viability, and the morphological changes of S. mutans were evaluated using scanning electronic microscopy. The bactericidal effects of 254- and 405-nm light resulted in > 5-log and 4-log reductions, respectively (p<0.05), after 20min of treatment and a>7-log reduction after 40min of treatment in both treatment groups relative to the control group. It was confirmed that the antibacterial effect could be shown by causing the photocatalytic reaction of TiO 2 in S. mutans biofilm even at the wavelength of visible light (405nm) as at the wavelength of ultraviolet light (254nm). Copyright © 2017 Elsevier B.V. All rights reserved.

Masked rhodamine dyes of five principal colors revealed by photolysis of a 2-diazo-1-indanone caging group: synthesis, photophysics, and light microscopy applications.

PubMed

Belov, Vladimir N; Mitronova, Gyuzel Yu; Bossi, Mariano L; Boyarskiy, Vadim P; Hebisch, Elke; Geisler, Claudia; Kolmakov, Kirill; Wurm, Christian A; Willig, Katrin I; Hell, Stefan W

2014-10-06

Caged rhodamine dyes (Rhodamines NN) of five basic colors were synthesized and used as "hidden" markers in subdiffractional and conventional light microscopy. These masked fluorophores with a 2-diazo-1-indanone group can be irreversibly photoactivated, either by irradiation with UV- or violet light (one-photon process), or by exposure to intense red light (λ∼750 nm; two-photon mode). All dyes possess a very small 2-diazoketone caging group incorporated into the 2-diazo-1-indanone residue with a quaternary carbon atom (C-3) and a spiro-9H-xanthene fragment. Initially they are non-colored (pale yellow), non-fluorescent, and absorb at λ=330-350 nm (molar extinction coefficient (ε)≈10(4)  M(-1)  cm(-1)) with a band edge that extends to about λ=440 nm. The absorption and emission bands of the uncaged derivatives are tunable over a wide range (λ=511-633 and 525-653 nm, respectively). The unmasked dyes are highly colored and fluorescent (ε=3-8×10(4)  M(-1)  cm(-1) and fluorescence quantum yields (ϕ)=40-85% in the unbound state and in methanol). By stepwise and orthogonal protection of carboxylic and sulfonic acid groups a highly water-soluble caged red-emitting dye with two sulfonic acid residues was prepared. Rhodamines NN were decorated with amino-reactive N-hydroxysuccinimidyl ester groups, applied in aqueous buffers, easily conjugated with proteins, and readily photoactivated (uncaged) with λ=375-420 nm light or intense red light (λ=775 nm). Protein conjugates with optimal degrees of labeling (3-6) were prepared and uncaged with λ=405 nm light in aqueous buffer solutions (ϕ=20-38%). The photochemical cleavage of the masking group generates only molecular nitrogen. Some 10-40% of the non-fluorescent (dark) byproducts are also formed. However, they have low absorbance and do not quench the fluorescence of the uncaged dyes. Photoactivation of the individual molecules of Rhodamines NN (e.g., due to reversible or irreversible transition to a "dark" non-emitting state or photobleaching) provides multicolor images with subdiffractional optical resolution. The applicability of these novel caged fluorophores in super-resolution optical microscopy is exemplified. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparison of halogen, plasma and LED curing units.

PubMed

Nomoto, Rie; McCabe, John F; Hirano, Susumu

2004-01-01

This study evaluated the characteristics of two kinds of recently developed light-curing unit; plasma arc and blue light emitting diodes (LED), in comparison with a conventional tungsten-halogen light-curing unit. The light intensity and spectral distribution of light from these light-curing units, the temperature rise of the bovine enamel surface and the depth of cure of composites exposed to each unit were investigated. The light intensity and depth of cure were determined according to ISO standards. The spectral distributions of emitted light were measured using a spectro-radiometer. The temperature increase induced by irradiation was measured by using a thermocouple. Generally, light intensities in the range 400-515 nm emitted from the plasma arc were greater than those from other types. Light in the UV-A region was emitted from some plasma arc units. The required irradiation times were six to nine seconds for the plasma arc units and 40 to 60 seconds for the LED units to create a depth of cure equal to that produced by the tungsten-halogen light with 20 seconds of irradiation. The temperature increased by increasing the irradiation time for every light-curing unit. The temperature increases were 15 degrees C to 60 degrees C for plasma arc units, around 15 degrees C for a conventional halogen unit and under 10 degrees C for LED units. Both the plasma arc and LED units required longer irradiation times than those recommended by their respective manufacturers. Clinicians should be aware of potential thermal rise and UV-A hazard when using plasma arc units.

Ba2ZnWO6:Sm3+ as promising orange-red emitting phosphors: Photoluminescence properties and energy transfer process

NASA Astrophysics Data System (ADS)

Chen, Peng; Hu, Wenyuan; Yang, Dingming; Zhu, Jiayi; Zhang, Jing; Wu, Yadong

2018-02-01

Novel orange-red emitting phosphors, Ba2Zn1-xWO6:xSm3+ (x = 0.03, 0.04, 0.05, 0.06 and 0.07) (BZW:Sm3+), were prepared using a high-temperature solid-state reaction method. Their crystal structure and photoluminescence properties were characterized and the mechanism of energy transfers between Ba2ZnWO6 and Sm3+ elucidated in detail. It was found that the phosphors had a cubic structure with space group Fm 3 bar m . They can be excited by near-ultraviolet light, and the characteristic emissions of Sm3+ ions are observed at 564 nm, 598 nm and 645 nm, corresponding to 4G5/2 → 6H5/2, 4G5/2 → 6H7/2 and 4G5/2 → 6H9/2 transitions, respectively. The 4G5/2 → 6H9/2 transitions shows the greatest intensity, which indicates that Sm3+ ions occupy the noncentrosymmetric sites. The optimal doping concentration of Sm3+ ions in Ba2ZnWO6 is about 5 mol% and the phenomenon of concentration quenching occurs when the content of Sm3+ ions exceeds 5 mol%. All results show that the Ba2ZnWO6:Sm3+ phosphor holds great promise for use in high-quality white light-emitting diodes.

Fabrication of ZnO photonic crystals by nanosphere lithography using inductively coupled-plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the ZnO/GaN heterojunction light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Shr-Jia; Chang, Chun-Ming; Kao, Jiann-Shiun

2010-07-15

This article reports fabrication of n-ZnO photonic crystal/p-GaN light emitting diode (LED) by nanosphere lithography to further booster the light efficiency. In this article, the fabrication of ZnO photonic crystals is carried out by nanosphere lithography using inductively coupled plasma reactive ion etching with CH{sub 4}/H{sub 2}/Ar plasma on the n-ZnO/p-GaN heterojunction LEDs. The CH{sub 4}/H{sub 2}/Ar mixed gas gives high etching rate of n-ZnO film, which yields a better surface morphology and results less plasma-induced damages of the n-ZnO film. Optimal ZnO lattice parameters of 200 nm and air fill factor from 0.35 to 0.65 were obtained from fittingmore » the spectrum of n-ZnO/p-GaN LED using a MATLAB code. In this article, we will show our recent result that a ZnO photonic crystal cylinder has been fabricated using polystyrene nanosphere mask with lattice parameter of 200 nm and radius of hole around 70 nm. Surface morphology of ZnO photonic crystal was examined by scanning electron microscope.« less

Absorbance detector for high performance liquid chromatography based on a deep-UV light-emitting diode at 235nm.

PubMed

da Silveira Petruci, João Flavio; Liebetanz, Michael G; Cardoso, Arnaldo Alves; Hauser, Peter C

2017-08-25

In this communication, we describe a flow-through optical absorption detector for HPLC using for the first time a deep-UV light-emitting diode with an emission band at 235nm as light source. The detector is also comprised of a UV-sensitive photodiode positioned to enable measurement of radiation through a flow-through cuvette with round aperture of 1mm diameter and optical path length of 10mm, and a second one positioned as reference photodiode; a beam splitter and a power supply. The absorbance was measured and related to the analyte concentration by emulating the Lambert-Beer law with a log-ratio amplifier circuitry. This detector showed noise levels of 0.30mAU, which is comparable with our previous LED-based detectors employing LEDs at 280 and 255nm. The detector was coupled to a HPLC system and successfully evaluated for the determination of the anti-diabetic drugs pioglitazone and glimepiride in an isocratic separation and the benzodiazepines flurazepam, oxazepam and clobazam in a gradient elution. Good linearities (r>0.99), a precision better than 0.85% and limits of detection at sub-ppm levels were achieved. Copyright © 2017 Elsevier B.V. All rights reserved.

Colonic Marking With Near-Infrared, Light-Emitting, Diode-Activated Indocyanine Green for Laparoscopic Colorectal Surgery.

PubMed

Nagata, Jun; Fukunaga, Yosuke; Akiyoshi, Takashi; Konishi, Tsuyoshi; Fujimoto, Yoshiya; Nagayama, Satoshi; Yamamoto, Noriko; Ueno, Masashi

2016-02-01

Accurate identification of the location of colorectal lesions is crucial during laparoscopic surgery. Endoscopic marking has been used as an effective preoperative marker for tumor identification. We investigated the feasibility and safety of an imaging method using near-infrared, light-emitting, diode-activated indocyanine green fluorescence in colorectal laparoscopic surgery. This was a single-institution, prospective study. This study was conducted in a tertiary referral hospital. We enrolled 24 patients who underwent laparoscopic surgery. Indocyanine green and India ink were injected into the same patients undergoing preoperative colonoscopy for colon cancer. During subsequent laparoscopic resection of colorectal tumors, the colon was first observed with white light. Then, indocyanine green was activated with a light-emitting diode at 760 nm as the light source. Near-infrared-induced fluorescence showed tumor location clearly and accurately in all 24 of the patients. All of the patients who underwent laparoscopic surgery after marking had positive indocyanine green staining at the time of surgery. Perioperative complications attributed to dye use were not observed. This study is limited by the cost of indocyanine green detection, the timing of the colonoscopy and tattooing in relation to the operation and identification with indocyanine green, and the small size of the series. These data suggest that our novel method for colonic marking with fluorescence imaging of near-infrared, light-emitting, diode-activated indocyanine green is feasible and safe. This method is useful, has no adverse effects, and can be used for perioperative identification of tumor location. Near-infrared, light-emitting, diode-activated indocyanine green has potential use as a colonic marking agent.

[Ru(bipy)3]2+ nanoparticle-incorporate dental light cure resin to promote photobiomodulation therapy for enhanced vital pulp tissue repair

NASA Astrophysics Data System (ADS)

Mosca, Rodrigo C.; Young, Nicholas; Zeituni, Carlos A.; Arany, Praveen R.

2018-02-01

The use of nanoparticle on dental light cure resin is not new, currently several compounds (nanoadditives) are used to promote better communication between the restorative material and biological tissues. The interest for this application is growing up to enhance mechanical proprieties to dental tissue cells regeneration. Bioactive nanoparticles and complex compounds with multiple functions are the major target for optimizing the restorative materials. In this work, we incorporate [Ru(bipy)3]2+ nanoparticles, that absorbs energy at 450 nm (blue-light) and emits strongly at 620 nm (red-light), in PLGA Microspheres and insert it in Dental Light Cure Resin to promote the Photobiomodulation Therapy (PBM) effects to accelerate dental pulp repair by in vitro using cytotoxicity and proliferation assay.

Light-Emitting Photon-Upconversion Nanoparticles in the Generation of Transdermal Reactive-Oxygen Species.

PubMed

Prieto, Martin; Rwei, Alina Y; Alejo, Teresa; Wei, Tuo; Lopez-Franco, Maria Teresa; Mendoza, Gracia; Sebastian, Victor; Kohane, Daniel S; Arruebo, Manuel

2017-12-06

Common photosensitizers used in photodynamic therapy do not penetrate the skin effectively. In addition, the visible blue and red lights used to excite such photosensitizers have shallow penetration depths through tissue. To overcome these limitations, we have synthesized ultraviolet- and visible-light-emitting, energy-transfer-based upconversion nanoparticles and coencapsulated them inside PLGA-PEG (methoxy poly(ethylene glycol)-b-poly(lactic-co-glycolic acid)) nanoparticles with the photosensitizer protoporphyrin IX. Nd 3+ has been introduced as a sensitizer in the upconversion nanostructure to allow its excitation at 808 nm. The subcytotoxic doses of the hybrid nanoparticles have been evaluated on different cell lines (i.e., fibroblasts, HaCaT, THP-1 monocytic cell line, U251MG (glioblastoma cell line), and mMSCs (murine mesenchymal stem cells). Upon NIR (near infrared)-light excitation, the upconversion nanoparticles emitted UV and VIS light, which consequently activated the generation of reactive-oxygen species (ROS). In addition, after irradiating at 808 nm, the resulting hybrid nanoparticles containing both upconversion nanoparticles and protoporphyrin IX generated 3.4 times more ROS than PLGA-PEG nanoparticles containing just the same dose of protoporphyrin IX. Their photodynamic effect was also assayed on different cell cultures, demonstrating their efficacy in selectively killing treated and irradiated cells. Compared to the topical application of the free photosensitizer, enhanced skin permeation and penetration were observed for the nanoparticulate formulation, using an ex vivo human-skin-permeation experiment. Whereas free protoporphyrin IX remained located at the outer layer of the skin, nanoparticle-encapsulated protoporphyrin IX was able to penetrate through the epidermal layer slightly into the dermis.

High-Speed High-Efficiency Large-Area Resonant Cavity Enhanced p-i-n Photodiodes for Multimode Fiber Communications

DTIC Science & Technology

2001-12-01

850 nm. The layers are grown by molecular beam epitaxy . The AlGaAs–GaAs inter- faces are alloy-graded for 30 nm to eliminate charge trapping that may... beam of the VCSELs allow for easy coupling of light into the MMF, it is also desirable to have photodetectors with large active windows compatible with... VCSEL )emitting at 850 nm [1] have become the preferred source for high-speed short-wavelength communication systems. These VCSELs are particularly

Carbon nanotube-graphene composite film as transparent conductive electrode for GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Kang, Chun Hong; Shen, Chao; M. Saheed, M. Shuaib; Mohamed, Norani Muti; Ng, Tien Khee; Ooi, Boon S.; Burhanudin, Zainal Arif

2016-08-01

Transparent conductive electrodes (TCE) made of carbon nanotube (CNT) and graphene composite for GaN-based light emitting diodes (LED) are presented. The TCE with 533-Ω/□ sheet resistance and 88% transmittance were obtained when chemical-vapor-deposition grown graphene was fused across CNT networks. With an additional 2-nm thin NiOx interlayer between the TCE and top p-GaN layer of the LED, the forward voltage was reduced to 5.12 V at 20-mA injection current. Four-fold improvement in terms of light output power was observed. The improvement can be ascribed to the enhanced lateral current spreading across the hybrid CNT-graphene TCE before injection into the p-GaN layer.

Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

NASA Astrophysics Data System (ADS)

Chan, Chia-Hua; Hou, Chia-Hung; Tseng, Shao-Ze; Chen, Tsing-Jen; Chien, Hung-Ta; Hsiao, Fu-Li; Lee, Chien-Chieh; Tsai, Yen-Ling; Chen, Chii-Chang

2009-07-01

This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO2 nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω-scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.

Internal photoluminescence in ZnSe homoepitaxy and application in blue green orange mixed-color light-emitting diodes

NASA Astrophysics Data System (ADS)

Wenisch, H.; Fehrer, M.; Klude, M.; Ohkawa, K.; Hommel, D.

2000-06-01

We discuss the controllable color-range in ZnSe-based light-emitting diodes (LEDs) realized by ZnSe homoepitaxy and internal photoluminescence. ZnSe-based LED structures were grown by molecular-beam epitaxy (MBE) on mostly conductive ZnSe substrates, which exhibit under short wavelength light excitation at room temperature strong orange emission around 600 nm. This fact is exploited to fabricate integrated mixed-color LED chips, where light from the active layer sandwiched in a p-n-junction acts as internal excitation source. We named this effect recently "Internal Photoluminescence" (Wenisch et al., J. Appl. Phys. 82 (1997) 4690). It leads to electroluminescence spectra with two distinct emission peaks originated from the active layer and from the ZnSe substrate, respectively. In view of color impression, just by varying the Cd xZn 1- xSe quantum-well composition and the radiant recombination rate in the substrate by it's choice, as much as two thirds of the visible color space is covered. Under conditions, when only the substrate emission is present, Commission Internationale d'Eclairage (CIE) chromaticity coordinates for orange color LEDs of (0.54, 0.45, 0.01) for the red, green and blue color, respectively, were determined. 490-nm quantum-well-emitting LEDs were found to be best suited in reaching the technologically important balanced white emission ("White Point") and a value of (0.31, 0.39, 0.30) for the color coordinates close to it was experimentally achieved.

Resonant-cavity light-emitting diodes for optical interconnects

NASA Astrophysics Data System (ADS)

Jin, Xu

This dissertation addresses the issues related to external quantum efficiencies and light coupling efficiency of novel 1.3 mum Resonant-cavity light-emitting diodes (RCLEDs) on GaAs substrates. External quantum efficiency (QE) is defined as the number of extracted photons per injected electrons, i.e., the product of injection efficiency, internal QE, and light extraction efficiency. This study focuses on the latter two terms. Internal QE mainly depends on the properties of the active region quantum wells (QWs) used in the RCLEDs, such as composition, thickness, and strain compensation. GaAsSb/GaAs QW edge-emitting (EE) lasers are characterized experimentally to extract key parameters, such as internal QE and internal loss. With optimized QWs and a novel self-aligned EE lasers process, room temperature continuous wave (CW) operation of GaAsSb EE lasers has been demonstrated for the first time. The highest operational temperature for the EE lasers is 48°C at a wavelength as long as 1260 nm. This result is the best ever reported by a university group. In conventional LEDs, very little light generated by the active region, succeeds in escaping from the semiconductor material due to the small critical angle of total internal reflection. With the use of a resonant cavity, the light extraction efficiency of RCLEDs is significantly improved. Front and back reflectivities, detuning (offset) between resonant-cavity peak and electroluminescence, and electroluminescence linewidth have been identified as key factors influencing light extraction efficiency. Numerical simulations indicate that the fraction of luminescence transmitted through the top mirror of an optimized RCLED is around 9%, which is more than double that of conventional LEDs. This number will be larger when multiple reflections and photon recycling are considered; which are not included in the current model since they are structure dependent. The best GaAsSb/GaAs QW RCLEDs demonstrated in this work have shown narrow spectral linewidths of 7-10 nm, extracted light output power in the range of 200-300 muW, and modulation speed up to 300 MHz. This is the first demonstration of 1.3 muRCLEDs on GaAs substrates with performance comparable to InP based surface-emitting LEDs.

High power 808 nm vertical cavity surface emitting laser with multi-ring-shaped-aperture structure

NASA Astrophysics Data System (ADS)

Hao, Y. Q.; Shang, C. Y.; Feng, Y.; Yan, C. L.; Zhao, Y. J.; Wang, Y. X.; Wang, X. H.; Liu, G. J.

2011-02-01

The carrier conglomeration effect has been one of the main problems in developing electrically pumped high power vertical cavity surface emitting laser (VCSEL) with large aperture. We demonstrate a high power 808 nm VCSEL with multi-ring-shaped-aperture (MRSA) to weaken the carrier conglomeration effect. Compared with typical VCSEL with single large aperture (SLA), the 300-μm-diameter VCSEL with MRSA has more uniform near field and far field patterns. Moreover, MRSA laser exhibits maximal CW light output power 0.3 W which is about 3 times that of SLA laser. And the maximal wall-plug efficiency of 17.4% is achieved, higher than that of SLA laser by 10%.

Dim-light photoreceptor of chub mackerel Scomber japonicus and the photoresponse upon illumination with LEDs of different wavelengths.

PubMed

Jang, Jun-Chul; Choi, Mi-Jin; Yang, Yong-Soo; Lee, Hyung-Been; Yu, Young-Moon; Kim, Jong-Myoung

2016-06-01

To study the absorption characteristics of rhodopsin, a dim-light photoreceptor, in chub mackerel (Scomber japonicus) and the relationship between light wavelengths on the photoresponse, the rod opsin gene was cloned into an expression vector, pMT4. Recombinant opsin was transiently expressed in COS-1 cells and reconstituted with 11-cis-retinal. Cells containing the regenerated rhodopsin were solubilized and subjected to UV/Vis spectroscopic analysis in the dark and upon illumination. Difference spectra from the lysates indicated an absorption maximum of mackerel rhodopsin around 500 nm. Four types of light-emitting diode (LED) modules with different wavelengths (red, peak 627 nm; cyan, 505 nm; blue, 442 nm; white, 447 + 560 nm) were constructed to examine their effects on the photoresponse in chub mackerel. Behavioral responses of the mackerels, including speed and frequencies acclimated in the dark and upon LED illumination, were analyzed using an underwater acoustic camera. Compared to an average speed of 22.25 ± 1.57 cm/s of mackerel movement in the dark, speed increased to 22.97 ± 0.29, 24.66 ± 1.06, 26.28 ± 2.28, and 25.19 ± 1.91 cm/s upon exposure to red, blue, cyan, and white LEDs, respectively. There were increases of 103.48 ± 1.58, 109.37 ± 5.29, 118.48 ± 10.82, and 109.43 ± 3.92 %, respectively, in the relative speed of the fishes upon illumination with red, blue, cyan, and white LEDs compared with that in the dark (set at 100 %). Similar rate of wavelength-dependent responses was observed in a frequency analysis. These results indicate that an LED emitting a peak wavelength close to an absorption maximum of rhodopsin is more effective at eliciting a response to light.

Photoluminescence properties and structure of double perovskite Ba2ZnWO6:Eu3+, Li+ as a novel red emitting phosphor

NASA Astrophysics Data System (ADS)

Chen, Peng; Yang, Dingming; Hu, Wenyuan; Zhang, Jing; Wu, Yadong

2017-12-01

Novel red-emitting Ba2Zn1-x-yWO6:xEu3+, yLi+ phosphors were prepared using a high-temperature solid-state method, and the crystal structure, the photoluminescence properties and the doping concentrations of Eu3+ and Li+ were investigated. The results show that these phosphors can be excited by near-ultraviolet light (250-400 nm) and co-doped Li+ can significantly enhance their PL performance. An intense red emission peak at 598 nm (5D0-7F1 transitions) was observed with an excitation wavelength of 316 nm. The CIE chromaticity coordinates of the phosphors are located in the red region, indicating that the BZW:Eu3+, Li+ phosphor holds promise as a red phosphor for near-ultraviolet excited WLEDs.

Prevention of Thyroidectomy Scars in Asian Adults With Low-Level Light Therapy.

PubMed

Park, Young Joon; Kim, Sang Jin; Song, Hyo Sang; Kim, Sue Kyoung; Lee, Jeonghun; Soh, Euy Young; Kim, You Chan

2016-04-01

Abnormal wound-healing after thyroidectomy with a resulting scar is a common dermatologic consultation. Despite many medical and surgical approaches, prevention of postoperative scars is challenging. This study validated the efficacy and safety of low-level light therapy (LLLT) using an 830/590 nm light-emitting diode (LED)-based device for prevention of thyroidectomy scars. Thirty-five patients with linear surgical suture lines after thyroidectomy were treated with 830/590 nm LED-LLLT. Daily application of 60 J/cm (11 minutes) for 1 week starting on postoperative day 1 was followed by treatment 3 times per week for 3 additional weeks. The control group (n = 15) remained untreated. Scar-prevention effects were evaluated 1 and 3 months after thyroidectomy with colorimetric evaluation using a tristimulus-color analyzer. The Vancouver Scar Scale (VSS) score, global assessment, and a subjective satisfaction score (range: 1-4) were also determined. Lightness (L*) and chrome values (a*) decreased significantly at the 3-month follow-up visit in the treatment group compared with those of controls. The average VSS and GAS scores were lower in the treatment group, whereas the subjective score was not significantly different. Light-emitting diode based LLLT treatment suppressed the formation of scars after thyroidectomy and could be safely used without noticeable adverse effects.

A Thermally Stable NiZn/Ta/Ni Scheme to Replace AuBe/Au Contacts in High-Efficiency AlGaInP-Based Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Kim, Dae-Hyun; Park, Jae-Seong; Kang, Daesung; Seong, Tae-Yeon

2017-08-01

We developed NiZn/(Ta/)Ni ohmic contacts to replace expensive AuBe/Au contacts commonly used in high-efficiency AlGaInP-based light-emitting diodes (LEDs), and compared the electrical properties of the two contact types. Unlike the AuBe/Au (130 nm/100 nm) contact, the NiZn/Ta/Ni (130 nm/20 nm/100 nm) contact shows improved electrical properties after being annealed at 500°C, with a contact resistivity of 5.2 × 10-6 Ω cm2. LEDs with the NiZn/Ta/Ni contact exhibited a 4.4% higher output power (at 250 mW) than LEDs with the AuBe/Au contact. In contrast to the trend for the AuBe/Au contact, the Ga 2 p core level for the NiZn/Ta/Ni contact shifted toward lower binding energies after being annealed at 500°C. Auger electron spectroscopy (AES) depth profiles showed that annealing the AuBe/Au samples caused the outdiffusion of both Be and P atoms into the metal contact, whereas in the NiZn/Ta/Ni samples, Zn atoms indiffused into the GaP layer. The annealing-induced electrical degradation and ohmic contact formation mechanisms are described and discussed on the basis of the results of x-ray photoemission spectroscopy and AES.

An intra-cavity pumped dual-wavelength laser operating at 946 nm and 1064 nm with Nd:YAG  +  Nd:YVO4 crystals

NASA Astrophysics Data System (ADS)

He-Dong, Xiao; Yuan, Dong; Yu, Liu; Shu-Tao, Li; Yong-Ji, Yu; Guang-Yong, Jin

2016-09-01

We adopt a compact intra-cavity pumped structure of Nd:YAG and Nd:YVO4 crystals to develop an efficient dual-wavelength laser that operates at 946 nm and 1064 nm. A 808 nm laser diode is used to pump the Nd:YAG crystal, which emits at 946 nm, and the Nd:YVO4 crystal, which emits at 1064 nm, is intra-cavity pumped at 946 nm. In order to avoid unnecessary pump light passing though the Nd:YAG crystal, reaching the Nd:YVO4 crystal and having an impact on the cavity pump, the two crystals are placed as far from one another as possible in this experiment. The output power at 1064 nm can be adjusted from 1 W-2.9 W by varying the separation between the two crystals. A total output power of 4 W at the dual-wavelengths is achieved at an incident pump power of 30.5 W, where the individual output powers for the 946 nm and 1064 nm emissions are 1.1 W and 2.9 W, respectively.

[Preparation and spectral analysis of a new type of blue light-emitting material delta-Alq3].

PubMed

Wang, Hua; Hao, Yu-ying; Gao, Zhi-xiang; Zhou, He-feng; Xu, Bing-she

2006-10-01

In the present article, delta-Alq3, a new type of blue light-emitting material, was synthesized and investigated by IR spectra, XRD spectra, UV-Vis absorption spectra, photoluminescence (PL) spectra, and electroluminescence (EL) spectra. The relationship between molecular spatial structure and spectral characteristics was studied by the spectral analysis of delta-Alq3 and alpha-Alq3. Results show that a new phase of Alq3 (delta-Alq3) can be obtained by vacuum heating alpha-Alq3, and the molecular spatial structure of alpha-Alq3 changes during the vacuum heating. The molecular spatial structure of delta-Alq3 lacks symmetry compared to alpha-Alq3. This transformation can reduce the electron cloud density on phenoxide of Alq3 and weaken the intermolecular conjugated interaction between adjacent Alq3 molecules. Hence, the pi--pi* electron transition absorption peak of delta-Alq3 shifts toward short wavelength in UV-Vis absorption spectra, and the maximum emission peak of delta-Alq3 (lamda max = 480 nm) blue-shifts by 35 nm compared with that of alpha-Alq3 (lamda max = 515 nm) in PL spectra. The maximum emission peaks of delta-Alq3 and alpha-Alq3 are all at 520 nm in EL spectra.

Luminescent properties of Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} and its potential application in white light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zhijun, E-mail: wangzhijunmail@yahoo.com.cn; Li, Panlai; Li, Ting

2013-06-01

Graphical abstract: Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} phosphor can be effectively excited by an ultraviolet and near-ultraviolet light, and produce a bright blue emission centered at 436 nm. The CIE chromaticity coordinations (x, y) of Na{sub 2}CaSiO{sub 4}:Eu{sup 2+}(NSCE)/Li{sub 2}SrSiO{sub 4}:Eu{sup 2+}(LSSE) vary with the molar ratio of the two constituents. When NSCE/LSSE is 1:3, the CIE chromaticity coordination is (0.332, 0.346), which is close to that of the natural sunlight (0.33, 0.33). The results indicate that Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} may be a promising blue phosphor for UV chip-based multi-phosphor converted white light emitting diodes. Highlights: ► Na{sub 2}CaSiO{sub 4}:Eu{supmore » 2+} shows the blue emission with a peak at 436 nm and broad excitation band in the UV/n-UV range. ► White light with CIE coordinates (0.332, 0.346) is generated by mixing the blue phosphor with the Li{sub 2}SrSiO{sub 4}:Eu{sup 2+} yellow phosphor. ► Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} would be a promising blue phosphor candidate for UV chip-based multi-phosphor converted white LEDs. - Abstract: A novel blue phosphor Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} is synthesized by a high temperature solid-state reaction, and its luminescent properties are systematically studied. Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} can be effectively excited by the 354 nm radiation, and create blue emission (436 nm). The emission intensity of Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} is influenced by the Eu{sup 2+} doping content, and the optimal doping content is 1.5%, and the concentration quenching mechanism of Eu{sup 2+} in Na{sub 2}CaSiO{sub 4} can be attributed to the multipolar interaction. The white light with CIE coordinates (0.332, 0.346) is generated by mixing the blue phosphor Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} with the yellow phosphor Li{sub 2}SrSiO{sub 4}:Eu{sup 2+}. The results indicate that Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} may be a potential blue emitting phosphor for UV chip-based multi-phosphor converted white light emitting diodes.« less

Single component Mn-doped perovskite-related CsPb2ClxBr5-x nanoplatelets with a record white light quantum yield of 49%: a new single layer color conversion material for light-emitting diodes.

PubMed

Wu, Hao; Xu, Shuhong; Shao, Haibao; Li, Lang; Cui, Yiping; Wang, Chunlei

2017-11-09

Single component nanocrystals (NCs) with white fluorescence are promising single layer color conversion media for white light-emitting diodes (LED) because the undesirable changes of chromaticity coordinates for the mixture of blue, green and red emitting NCs can be avoided. However, their practical applications have been hindered by the relative low photoluminescence (PL) quantum yield (QY) for traditional semiconductor NCs. Though Mn-doped perovskite nanocube is a potential candidate, it has been unable to realize a white-light emission to date. In this work, the synthesis of Mn-doped 2D perovskite-related CsPb 2 Cl x Br 5-x nanoplatelets with a pure white emission from a single component is reported. Unlike Mn-doped perovskite nanocubes with insufficient energy transfer efficiency, the current reported Mn-doped 2D perovskite-related CsPb 2 Cl x Br 5-x nanoplatelets show a 10 times higher energy transfer efficiency from perovskite to Mn impurities at the required emission wavelengths (about 450 nm for perovskite emission and 580 nm for Mn emission). As a result, the Mn/perovskite dual emission intensity ratio surprisingly elevates from less than 0.25 in case of Mn-doped nanocubes to 0.99 in the current Mn-doped CsPb 2 Cl x Br 5-x nanoplatelets, giving rise to a pure white light emission with Commission Internationale de l'Eclairage (CIE) color coordinates of (0.35, 0.32). More importantly, the highest PL QY for Mn-doped perovskite-related CsPb 2 Cl x Br 5-x nanoplatelets is up to 49%, which is a new record for white-emitting nanocrystals with single component. These highly luminescent nanoplatelets can be blended with polystyrene (PS) without changing the white light emission but dramatically improving perovskite stability. The perovskite-PS composites are available not only as a good solution processable coating material for assembling LED, but also as a superior conversion material for achieving white light LED with a single conversion layer.

Human-Friendly Light-Emitting Diode Source Stimulates Broiler Growth.

PubMed

Pan, Jinming; Yang, Yefeng; Yang, Bo; Dai, Wenhua; Yu, Yonghua

2015-01-01

Previous study and our laboratory have reported that short-wavelength (blue and green) light and combination stimulate broiler growth. However, short-wavelength stimuli could have negative effects on poultry husbandry workers. The present study was conducted to evaluate the effects of human-friendly yellow LED light, which is acceptable to humans and close to green light, on broiler growth. We also aimed to investigate the potential quantitative relationship between the wavelengths of light used for artificial illumination and growth parameters in broilers. After hatching, 360 female chicks ("Meihuang" were evenly divided into six lighting treatment groups: white LED strips (400-700 nm, WL); red LED strips (620 nm, RL); yellow LED strips (580 nm, YL); green LED strips (514 nm, GL); blue LED strips (455 nm, BL); and fluorescent strips (400-700 nm, FL). From 30 to 72 days of age, broilers reared under YL and GL were heavier than broilers treated with FL (P < 0.05). Broilers reared under YL obtained the similar growth parameters with the broilers reared under GL and BL (P > 0.05). Moreover, YL significantly improved feeding efficiency when compared with GL and BL at 45 and 60 days of age (P < 0.05). In addition, we found an age-dependent effect of light spectra on broiler growth and a quantitative relationship between LED light spectra (455 to 620 nm) and the live body weights of broilers. The wavelength of light (455 to 620 nm) was found to be negatively related (R2 = 0.876) to live body weight at an early stage of development, whereas the wavelength of light (455 to 620 nm) was found to be positively correlated with live body weight (R2 = 0.925) in older chickens. Our results demonstrated that human-friendly yellow LED light (YL), which is friendly to the human, can be applied to the broilers production.

Human-Friendly Light-Emitting Diode Source Stimulates Broiler Growth

PubMed Central

Yang, Bo; Dai, Wenhua; Yu, Yonghua

2015-01-01

Previous study and our laboratory have reported that short-wavelength (blue and green) light and combination stimulate broiler growth. However, short-wavelength stimuli could have negative effects on poultry husbandry workers. The present study was conducted to evaluate the effects of human-friendly yellow LED light, which is acceptable to humans and close to green light, on broiler growth. We also aimed to investigate the potential quantitative relationship between the wavelengths of light used for artificial illumination and growth parameters in broilers. After hatching, 360 female chicks (“Meihuang” were evenly divided into six lighting treatment groups: white LED strips (400–700 nm, WL); red LED strips (620 nm, RL); yellow LED strips (580 nm, YL); green LED strips (514 nm, GL); blue LED strips (455 nm, BL); and fluorescent strips (400–700 nm, FL). From 30 to 72 days of age, broilers reared under YL and GL were heavier than broilers treated with FL (P < 0.05). Broilers reared under YL obtained the similar growth parameters with the broilers reared under GL and BL (P > 0.05). Moreover, YL significantly improved feeding efficiency when compared with GL and BL at 45 and 60 days of age (P < 0.05). In addition, we found an age-dependent effect of light spectra on broiler growth and a quantitative relationship between LED light spectra (455 to 620 nm) and the live body weights of broilers. The wavelength of light (455 to 620 nm) was found to be negatively related (R 2 = 0.876) to live body weight at an early stage of development, whereas the wavelength of light (455 to 620 nm) was found to be positively correlated with live body weight (R 2 = 0.925) in older chickens. Our results demonstrated that human-friendly yellow LED light (YL), which is friendly to the human, can be applied to the broilers production. PMID:26270988

Al x Ga1‑ x N-based semipolar deep ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Akaike, Ryota; Ichikawa, Shuhei; Funato, Mitsuru; Kawakami, Yoichi

2018-06-01

Deep ultraviolet (UV) emission from Al x Ga1‑ x N-based light-emitting diodes (LEDs) fabricated on semipolar (1\\bar{1}02) (r-plane) AlN substrates is presented. The growth conditions are optimized. A high NH3 flow rate during metalorganic vapor phase epitaxy yields atomically flat Al y Ga1‑ y N (y > x) on which Al x Ga1‑ x N/Al y Ga1‑ y N multiple quantum wells with abrupt interfaces and good periodicity are fabricated. The fabricated r-Al x Ga1‑ x N-based LED emits at 270 nm, which is in the germicidal wavelength range. Additionally, the emission line width is narrow, and the peak wavelength is stable against the injection current, so the semipolar LED shows promise as a UV emitter.

Highly efficient green phosphorescent organic light emitting diodes with improved efficiency roll-off

NASA Astrophysics Data System (ADS)

Thangaraju, K.; Lee, Jonghee; Lee, Jeong-Ik; Chu, Hye Yong; Kim, Yun-Hi; Kwon, Soon-Ki

2015-06-01

A 10-nm thick 4,4',4″-tris(carbazole-9-yl)tri-phenylamine (TcTa) interlayer effectively confines triplet excitons within the emissive layer (EML) of phosphorescent organic light emitting diodes (PHOLEDs) based on green-emitting Ir(ppy)3 dopant and improves the charge balance in the EML of the device, resulting the higher device efficiencies of 61.7 cd/A, 19.7 %, and 43.2 lm/W with the maximum luminance of 75,310 cd/m2 and highly improved efficiency roll-off (22.2% at 20 mA/cm2) when compared to those (61.1 cd/A, 19.6 %, and 47.2 lm/W with a maximum luminance of 38,350 cd/m2) of the standard device with efficiency roll-off of 62.3 % at 20 mA/cm2.

InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu

InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. Themore » depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.« less

Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors.

PubMed

Lee, Changmin; Shen, Chao; Cozzan, Clayton; Farrell, Robert M; Speck, James S; Nakamura, Shuji; Ooi, Boon S; DenBaars, Steven P

2017-07-24

Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021¯)  substrate emitting at 410 nm was used for the transmitter. The measured modulation bandwidth of the LD was 1 GHz, which was limited by the avalanche photodetector. The emission from the NUV LD and the RGB phosphor combination measured a color rendering index (CRI) of 79 and correlated color temperature (CCT) of 4050 K, indicating promise of this approach for creating high quality white lighting. Using this configuration, data was successfully transmitted at a rate of more than 1 Gbps. This NUV laser-based system is expected to have lower background noise from sunlight at the LD emission wavelength than a system that uses a blue LD due to the rapid fall off in intensity of the solar spectrum in the NUV spectral region.

High efficiency fluorescent white OLEDs based on DOPPP

NASA Astrophysics Data System (ADS)

Zhang, Gang; Chen, Chen; Lang, Jihui; Zhao, Lina; Jiang, Wenlong

2017-08-01

The white organic light-emitting devices (WOLED) with the structures of ITO/m-MTDATA (10 nm)/NPB (30 nm)/Rubrene (0.2 nm)/DOPPP (x nm)/TAz (10 nm)/Alq3 (30 nm)/LiF (0.5 nm)/Al and ITO/NPB (30 nm)/DPAVBi:Rubrene (2 wt.%, 20 nm)/ DOPPP (x nm)/TAZ (10 nm)/Alq3 (30 nm)/LiF (0.5 nm)/Al (100 nm) have been fabricated by the vacuum thermal evaporation method. The results show that the chroma of the non-doped device is the best and the color coordinates are in the range of white light. The maximum luminance is 12,750 cd/m2 and the maximum current efficiency is 8.55 cd/A. The doped device A has the maximum luminance (16,570 cd/m2), when the thickness of blue layer DOPPP is 25 nm, and the doped device B achieves the highest efficiency (10.47 cd/A), when the thickness of DOPPP is 15 nm. All the performances of the doped devices are better than the non-doped one. The results demonstrate that the doped structures can realize the energy transfer and then improve the performance of the device effectively.

AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

NASA Astrophysics Data System (ADS)

Dong, Peng; Yan, Jianchang; Zhang, Yun; Wang, Junxi; Zeng, Jianping; Geng, Chong; Cong, Peipei; Sun, Lili; Wei, Tongbo; Zhao, Lixia; Yan, Qingfeng; He, Chenguang; Qin, Zhixin; Li, Jinmin

2014-06-01

We report high-performance AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates (NPSS) using metal-organic chemical vapor deposition. By nanoscale epitaxial lateral overgrowth on NPSS, 4-μm AlN buffer layer has shown strain relaxation and a coalescence thickness of only 2.5 μm. The full widths at half-maximum of X-ray diffraction (002) and (102) ω-scan rocking curves of AlN on NPSS are only 69.4 and 319.1 arcsec. The threading dislocation density in AlGaN-based multi-quantum wells, which are grown on this AlN/NPSS template with a light-emitting wavelength at 283 nm at room temperature, is reduced by 33% compared with that on flat sapphire substrate indicated by atomic force microscopy measurements, and the internal quantum efficiency increases from 30% to 43% revealed by temperature-dependent photoluminescent measurement.

Enhanced color purity of blue OLEDs based on well-design structure

NASA Astrophysics Data System (ADS)

Du, Qianqian; Wang, Wenjun; Li, Shuhong; Wang, Qingru; Xia, Shuzhen; Zhang, Bingyuan; Wang, Minghong; Fan, Quli

2016-09-01

We have fabricated blue organic light-emitting devices (OLEDs) with higher color purity and stability by optimizing the structure of the Glass/ITO/NPB(50 nm)/ BCzVBi (30 nm)/ TPBi (x nm)/Alq3(20 nm)/LiF/Al. The results show that the introducing of hole blocking layer(HBL) TPBi greatly can improve not only the color purity but the color stability, which owe to its higher the Highest Occupied Molecular Orbital (HOMO) energy levels of 6.2 eV. We expect our work will be useful to optimizing the blue OLEDs structure to enhancing the color property.

Photobiology eye safety for horticultural LED lighting: Transmittance performance of eyewear protection using high-irradiant monochromatic LEDs.

PubMed

Wu, Bo-Sen; Lefsrud, Mark G

2018-02-01

Light emitting diodes have slowly gained market share as horticultural lighting systems in greenhouses due to their rapid improvement in color performances and light outputs. These advancements have increased the availability of the full spectrum of visible wavelengths and the corresponding irradiance outputs available to plants. However, light emitting diodes owners have limited information on the proper options for personal eyewear protection as the irradiance levels have increased. The objective of this study was to measure the light transmittance performance of 12 eyewear protection including welding goggles, safety goggles, polarized glasses, and sunglasses across the human visible spectrum (380-740 nm) up to an irradiance level of 1500 W·m -2 from high-irradiant light emitting diodes assemblies. Based on the spectral measurements, certain transmitted spectra exhibited spectrum shifts or an alteration in the bimodal distribution which were different than the light emitting diodes spectra, due to the uneven transmittance efficiencies of the glasses. As for the measured transmittance percentages in two experiments, each type of eyewear protection showed distinct transmittance performances, and the performance of the tested eyewear protection was not impacted by irradiance but was dependent on the wavelength. The mean light transmittance was 1.77% for the welding glasses, 13.12% for the polarized glasses, 15.27% for the safety goggles, and 27.65% for the sunglasses. According to these measured results and the spectral weighting exposure limits from the International Electrotechnical Commission 62471 and EU directive 2006/25, consumers and workers using horticultural lighting can select welding goggles or polarized glasses, to limit the possible ocular impact of the high irradiance of monochromatic light in electrical lighting environment. Sunglasses and safety goggles would not be advised as protection, especially if infrared radiation was used.

Influence of skin type and wavelength on light wave reflectance.

PubMed

Fallow, Bennett A; Tarumi, Takashi; Tanaka, Hirofumi

2013-06-01

A new application of photoplethysmography (PPG) has emerged recently to provide the possibility of heart rate monitoring without a telemetric chest strap. The aim of this study was to determine if a new device could detect pulsation over a broad range of skin types, and what light wavelength would be most suitable for detecting the signals. A light emitting diode-based PPG system was used to detect changes in pulsatile blood flow on 23 apparently healthy individuals (11 male and 12 female, 20-59 years old) of varying skin types classified according to a questionnaire in combination with digital photographs with a skin type chart. Four different light wavelengths (470, 520, 630, and 880 nm) were tested. Normalized modulation level is calculated as the AC/DC component ratio and represents the change in flow over the underlying constant state of flow or perfusion. In the resting condition, green light wavelength (520 nm) displayed greater modulation (p < 0.001) than all the other wavelengths analyzed regardless of skin types. Type V (dark brown) skin type was significantly lower in modulation than all other skin types. In the exercise condition, both blue (470 nm) and green (520 nm) light wavelengths displayed greater signal-to-noise ratios than red (630 nm) or infrared (880 nm) light wavelengths (p < 0.001). We concluded that a PPG-based device can detect pulsation across all skin types and that a greater resolution was obtained using a green light wavelength at rest and a green or blue light wavelength during exercise.

Visible optical radiation generates bactericidal effect applicable for inactivation of health care associated germs demonstrated by inactivation of E. coli and B. subtilis using 405-nm and 460-nm light emitting diodes

NASA Astrophysics Data System (ADS)

Hönes, Katharina; Stangl, Felix; Sift, Michael; Hessling, Martin

2015-07-01

The Ulm University of Applied Sciences is investigating a technique using visible optical radiation (405 nm and 460 nm) to inactivate health-hazardous bacteria in water. A conceivable application could be point-of-use disinfection implementations in developing countries for safe drinking water supply. Another possible application field could be to provide sterile water in medical institutions like hospitals or dental surgeries where contaminated pipework or long-term disuse often results in higher germ concentrations. Optical radiation for disinfection is presently mostly used in UV wavelength ranges but the possibility of bacterial inactivation with visible light was so far generally disregarded. One of the advantages of visible light is, that instead of mercury arc lamps, light emitting diodes could be used, which are commercially available and therefore cost-efficient concerning the visible light spectrum. Furthermore they inherit a considerable longer life span than UV-C LEDs and are non-hazardous in contrast to mercury arc lamps. Above all there are specific germs, like Bacillus subtilis, which show an inactivation resistance to UV-C wavelengths. Due to the totally different deactivation mechanism even higher disinfection rates are reached, compared to Escherichia coli as a standard laboratory germ. By 460 nm a reduction of three log-levels appeared with Bacillus subtilis and a half log-level with Escherichia coli both at a dose of about 300 J/cm². By the more efficient wavelength of 405 nm four and a half log-levels are reached with Bacillus subtilis and one and a half log-level with Escherichia coli also both at a dose of about 300 J/cm². In addition the employed optical setup, which delivered a homogeneous illumination and skirts the need of a stirring technique to compensate irregularities, was an important improvement compared to previous published setups. Evaluated by optical simulation in ZEMAX® the designed optical element provided proven homogeneity distributions with maximum variation of ± 10 %.

Study on charge carrier recombination zone with ultrathin rubrene layer as probe

NASA Astrophysics Data System (ADS)

Wen, Wen; Yu, Jungsheng; Li, Yi; Li, Lu; Jiang, Yadong

2009-05-01

The characteristic of charge carrier recombination zone in N,N'-bis-(1-naphthyl)-N,N'-biphenyl-1,1'-biphenyl-4,4'-diamine (NPB) based OLEDs is studied using an ultrathin 5,6,11,12-tetraphenylnaphthacene (rubrene) as a probe. By adjusting the rubrene thickness and location in NPB light-emitting layer, the luminescent spectra and electrical properties of the devices are investigated. The results show that when the thickness ranges from 0.2 to 0.8 nm, the surface morphology of rubrene exists as the discontinuous island-like state locating on the surface of NPB film and seldom affect the electrical characteristics. While the location of rubrene shifted from the interface of NPB/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) to NPB side, the maximum exciton concentration is found within 2 nm away from the interface, which is the main charge carrier recombination zone. With an optimized structure of indium-tin-oxide (ITO)/NPB (40nm)/rubrene (0.3nm)/NPB (7nm)/BCP (30nm)/Mg:Ag, the device exhibits a turn on voltage as low as 3 V and stable white light. The peaks of EL spectra are located at 431 and 555 nm corresponding to the Commissions Internationale De L'Eclairage (CIE) coordinates of (0.32, 0.32), which are relatively stable under the bias voltage from 5 to 15 V. A maximum luminance of 5630 cd/m2 and a maximum power efficiency of 0.6 lm/W is achieved. The balanced spectra are attributed to the stable confining of charge carriers and exciton by the thin emitting layers.

Ultraviolet light-emitting diodes in water disinfection.

PubMed

Vilhunen, Sari; Särkkä, Heikki; Sillanpää, Mika

2009-06-01

The novel system of ultraviolet light-emitting diodes (UV LEDs) was studied in water disinfection. Conventional UV lamps, like mercury vapor lamp, consume much energy and are considered to be problem waste after use. UV LEDs are energy efficient and free of toxicants. This study showed the suitability of LEDs in disinfection and provided information of the effect of two emitted wavelengths and different test mediums to Escherichia coli destruction. Common laboratory strain of E. coli (K12) was used and the effects of two emitted wavelengths (269 and 276 nm) were investigated with two photolytic batch reactors both including ten LEDs. The effects of test medium were examined with ultrapure water, nutrient and water, and nutrient and water with humic acids. Efficiency of reactors was almost the same even though the one emitting higher wavelength had doubled optical power compared to the other. Therefore, the effect of wavelength was evident and the radiation emitted at 269 nm was more powerful. Also, the impact of background was studied and noticed to have only slight deteriorating effect. In the 5-min experiment, the bacterial reduction of three to four log colony-forming units (CFU) per cubic centimeter was achieved, in all cases. When turbidity of the test medium was greater, part of the UV radiation was spent on the absorption and reactions with extra substances on liquid. Humic acids can also coat the bacteria reducing the sensitivity of the cells to UV light. The lower wavelength was distinctly more efficient when the optical power is considered, even though the difference of wavelengths was small. The reason presumably is the greater absorption of DNA causing more efficient bacterial breakage. UV LEDs were efficient in E. coli destruction, even if LEDs were considered to have rather low optical power. The effect of wavelengths was noticeable but the test medium did not have much impact. This study found UV LEDs to be an optimal method for bacterial disinfection. The emitted wavelength was found to be an essential factor when using LEDs; thus, care should be taken in selecting the proper LED for maximum disinfection.

Method And Apparatus For Examining A Tissue Using The Spectral Wing Emission Therefrom Induced By Visible To Infrared Photoexcitation.

DOEpatents

Alfano, Robert R.; Demos, Stavros G.; Zhang, Gang

2003-12-16

Method and an apparatus for examining a tissue using the spectral wing emission therefrom induced by visible to infrared photoexcitation. In one aspect, the method is used to characterize the condition of a tissue sample and comprises the steps of (a) photoexciting the tissue sample with substantially monochromatic light having a wavelength of at least 600 nm; and (b) using the resultant far red and near infrared spectral wing emission (SW) emitted from the tissue sample to characterize the condition of the tissue sample. In one embodiment, the substantially monochromatic photoexciting light is a continuous beam of light, and the resultant steady-state far red and near infrared SW emission from the tissue sample is used to characterize the condition of the tissue sample. In another embodiment, the substantially monochromatic photoexciting light is a light pulse, and the resultant time-resolved far red and near infrared SW emission emitted from the tissue sample is used to characterize the condition of the tissue sample. In still another embodiment, the substantially monochromatic photoexciting light is a polarized light pulse, and the parallel and perpendicular components of the resultant polarized time-resolved SW emission emitted from the tissue sample are used to characterize the condition of the tissue sample.

Deep ultraviolet light-emitting and laser diodes

NASA Astrophysics Data System (ADS)

Khan, Asif; Asif, Fatima; Muhtadi, Sakib

2016-02-01

Nearly all the air-water purification/polymer curing systems and bio-medical instruments require 250-300 nm wavelength ultraviolet light for which mercury lamps are primarily used. As a potential replacement for these hazardous mercury lamps, several global research teams are developing AlGaN based Deep Ultraviolet (DUV) light emitting diodes (LEDs) and DUV LED Lamps and Laser Diodes over Sapphire and AlN substrates. In this paper, we review the current research focus and the latest device results. In addition to the current results we also discuss a new quasipseudomorphic device design approach. This approach which is much easier to integrate in a commercial production setting was successfully used to demonstrate UVC devices on Sapphire substrates with performance levels equal to or better than the conventional relaxed device designs.

Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Al tahtamouni, T. M., E-mail: talal@yu.edu.jo; Lin, J. Y.; Jiang, H. X.

2014-04-15

Mg-doped AlN/AlGaN superlattice (Mg-SL) and Mg-doped AlGaN epilayers have been investigated in the 284 nm deep ultraviolet (DUV) light emitting diodes (LEDs) as electron blocking layers. It was found that the use of Mg-SL improved the material quality of the p-GaN contact layer, as evidenced in the decreased density of surface pits and improved surface morphology and crystalline quality. The performance of the DUV LEDs fabricated using Mg-SL was significantly improved, as manifested by enhanced light intensity and output power, and reduced turn-on voltage. The improved performance is attributed to the enhanced blocking of electron overflow, and enhanced hole injection.

Improvement in lifetime of green organic light-emitting device

NASA Astrophysics Data System (ADS)

Ki, Hyun Chul; Kim, Seon Hoon; Kim, Doo Gun; Kim, Hyun Jin; Ko, Hang Ju; Han, Myung-Soo; Kim, Hwe Jong; Hong, Kyung Jin

2010-02-01

We have proposed a novel encapsulation method with simple process in comparison with conventional encapsulation technique. Here, the encapsulation film of silicon dioxide is steady for external environment because this can be designed to cover the emitting organic material from air. Silicon dioxide of 220 nm was deposited by plasma enhanced chemical vapor deposition and etched by reactive ion etching system. Then, Alq3 was used as a material to emitting layer in the green (organic light emitting device) OLED and TPD in the hole transportation layer was used for the harmonious transportation of hole. Luminance was measured with 40 hour intervals at the air-exposed condition. After 400, 1,000, 1,600, and 2,000 hours, luminance of green OLED were 7,366, 7,200, 6,210, and 5,100 cd/m2, respectively. Luminance of green OLED doesn't decrease until 2,000 hours. As a results, proposed encapsulation technique can increase the life time of green OLED.

300-mW narrow-linewidth deep-ultraviolet light generation at 193 nm by frequency mixing between Yb-hybrid and Er-fiber lasers.

PubMed

Xuan, Hongwen; Zhao, Zhigang; Igarashi, Hironori; Ito, Shinji; Kakizaki, Kouji; Kobayashi, Yohei

2015-04-20

A narrow-linewidth, high average power deep-ultraviolet (DUV) coherent laser emitting at 193 nm is demonstrated by frequency mixing a Yb-hybrid laser with an Er-fiber laser. The Yb-hybrid laser consists of Yb-fiber lasers and an Yb:YAG amplifier. The average output power of the 193 nm laser is 310 mW at 6 kHz, which corresponds to a pulse energy of 51 μJ. To the best of our knowledge, this is the highest average power and pulse energy ever reported for a narrow-linewidth 193 nm light generated by a combination of solid-state and fiber lasers with frequency mixing. We believe this laser will be beneficial for the application of interference lithography by seeding an injection-locking ArF eximer laser.

Effect of LED irradiation on the ripening and nutritional quality of postharvest banana fruit.

PubMed

Huang, Jen-Yi; Xu, Fengying; Zhou, Weibiao

2018-04-24

With the ability to tailor wavelengths necessary to the photosynthetically active radiation spectrum of plant pigments, light-emitting diodes (LEDs) offer vast possibilities in horticultural lighting. The influence of LED light irradiation on major postharvest features of banana was investigated. Mature green bananas were treated daily with selected blue (464-474 nm), green (515-525 nm) and red (617-627 nm) LED lights for 8 days, and compared with non-illuminated control. The positive effect of LED lighting on the acceleration of ripening in bananas was greatest for blue, followed by red and green. Under the irradiation of LED lights, faster peel de-greening and flesh softening, and increased ethylene production and respiration rate in bananas were observed during storage. Furthermore, the accumulations of ascorbic acid, total phenols, and total sugars in banana fruit were enhanced by LED light exposure. LED light treatment can induce the ripening of bananas and improve their quality and nutrition potential. These findings might provide new chemical-free strategies to shorten the time to ripen banana after harvest by using LED light source. This article is protected by copyright. All rights reserved.

Development of novel UV emitting single crystalline film scintillators

NASA Astrophysics Data System (ADS)

Zorenko, Yu; Gorbenko, V.; Savchyn, V.; Voznyak, T.; Nikl, M.; Mares, J. A.; Martin, T.; Douissard, P.-A.

2011-04-01

The work is dedicated to development of new types of UV -emitting scintillators based on single crystalline films (SCF) of aluminimum perovskites and garnets grown by the liquid phase epitaxy (LPE) method. The development of the following three types of UV SCF scintillators is considered in this work: i) Ce-doped SCF of Y-Lu-Al-perovskites with Ce3+ emission in the 360-370 nm range with a decay time of 16-17 ns; ii) Pr-doped SCF of Y-Lu-Al garnets with Pr3+ emission in the 300-400 nm range with a decay time of 13-17 ns; iii) La3+ and Sc3+ doped SCF of Y-Lu-Al-garnets, emitting in the 290-400 nm range due to formation of the LaY,Lu, ScY,Lu and ScAl centers with decay time of 250-575 ns. The results of testing the several novel UV-emitting SCFs scintillators for visualization of X-ray images at ESFR are presented. It is shown that the UV emission of the LuAG:Sc, LuAG:La and LuAG:Pr SCFs is efficient enough for conversion of X-ray to the UV light and that these scintillators can be used for improvement of the resolution of imaging detectors in synchrotron radiation applications.

Synthesis and Luminescence Properties of Blue Na(Sr0.97-xCa(x))PO4:0.03Eu2+ Phosphors for White Light Emitting Diode Applications.

PubMed

Hakeem, D A; Park, K

2015-07-01

The crystal structure and luminescence properties of Na(Sr0.97-xCax)PO4:0.03Eu2+ (0 < x < 1.0) phosphors were studied, depending on the Ca2+ concentration. All the Na(Sr0.97-xCax)PO4:0.03Eu2+ phosphors had a hexagonal crystal structure. The excitation spectra of the prepared phosphors showed a broad band ranging from 250 to 420 nm, which arises due to the 4f-5d transitions of Eu2+ ions. Upon the excitation of 334 nm wavelength, the emission spectra showed a broad blue band ranging from 400 to 700 nm peaking at 450 nm. Among the prepared phosphors, the Na(Sr0.72Ca0.25)PO4:0.03Eu2+ showed the strongest emission intensity and could be applied as a blue emitting phosphor for UV-based w-LEDs.

Hydrothermal growth and luminescent properties of nonpolar a-plane (11 2 - 0) ZnCdO films for light-emitting diodes

NASA Astrophysics Data System (ADS)

Baik, Kwang Hyeon; Kim, Jimin; Jang, Soohwan

2018-03-01

Nonpolar a-plane ZnCdO films have been obtained on a-plane GaN using a simple low-cost hydrothermal growth method at the low temperature of 80 °C. The morphological, structural, optical, and electrical properties of a-plane ZnCdO films with various Cd contents have been investigated and compared. The photoluminescence peak of the a-plane Zn0.957Cd 0.043O film, was observed to be centered at 429 nm at 25 °C. We demonstrated a heterostructure light-emitting diode (LED) using nonpolar n-type Zn0.957Cd0.043O/p-type GaN films. The rectifying behavior of the current-voltage characteristics was observed with a turn-on voltage of 5 V. The electroluminescence of the LED showed emission peaks including 430 nm, which indicates the near-band-edge emission of a-plane Zn0.957Cd0.043O at 25 °C.

A spectrally tunable all-graphene-based flexible field-effect light-emitting device

PubMed Central

Wang, Xiaomu; Tian, He; Mohammad, Mohammad Ali; Li, Cheng; Wu, Can; Yang, Yi; Ren, Tian-Ling

2015-01-01

The continuous tuning of the emission spectrum of a single light-emitting diode (LED) by an external electrical bias is of great technological significance as a crucial property in high-quality displays, yet this capability has not been demonstrated in existing LEDs. Graphene, a tunable optical platform, is a promising medium to achieve this goal. Here we demonstrate a bright spectrally tunable electroluminescence from blue (∼450 nm) to red (∼750 nm) at the graphene oxide/reduced-graphene oxide interface. We explain the electroluminescence results from the recombination of Poole–Frenkel emission ionized electrons at the localized energy levels arising from semi-reduced graphene oxide, and holes from the top of the π band. Tuning of the emission wavelength is achieved by gate modulation of the participating localized energy levels. Our demonstration of current-driven tunable LEDs not only represents a method for emission wavelength tuning but also may find applications in high-quality displays. PMID:26178323

Collimation testing using slit Fresnel diffraction

NASA Astrophysics Data System (ADS)

Luo, Xiaohe; Hui, Mei; Wang, Shanshan; Hou, Yinlong; Zhou, Siyu; Zhu, Qiudong

2018-03-01

A simple collimation testing method based on slit Fresnel diffraction is proposed. The method needs only a CMOS and a slit with no requirement in dimensional accuracy. The light beam to be tested diffracts across the slit and forms a Fresnel diffraction pattern received by CMOS. After analysis, the defocusing amount and the distance between the primary peak point and secondary peak point of diffraction pattern fulfill an expression relationship and then the defocusing amount can be deduced from the expression. The method is applied to both the coherent beam and partially coherent beam, and these two beams are emitted from a laser and light-emitting diode (LED) with a spectrum width of about 50 nm in this paper. Simulations show that the wide spectrum of LED has the effect of smooth filtering to provide higher accuracy. Experiments show that the LED with a spectrum width of about 50 nm has a lower limitation error than the laser and can achieve up to 58.1601 μm with focal length 200 mm and slit width 15 mm.

Improved performance of organic light-emitting diode with vanadium pentoxide layer on the FTO surface

NASA Astrophysics Data System (ADS)

Saikia, D.; Sarma, R.

2017-06-01

Vanadium pentoxide layer deposited on the fluorine-doped tin oxide (FTO) anode by vacuum deposition has been investigated in organic light-emitting diode (OLED). With 12 nm optimal thickness of V2O5, the luminance efficiency is increased by 1.66 times compared to the single FTO-based OLED. The improvement of current efficiency implies that there is a better charge injection and better controlling of hole current. To investigate the performance of OLED by the buffer layer, V2O5 films of different thicknesses were deposited on the FTO anode and their J- V and L- V characteristics were studied. Further analysis was carried out by measuring sheet resistance, optical transmittance and surface morphology with the FE-SEM images. This result indicates that the V2O5 (12 nm) buffer layer is a good choice for increasing the efficiency of FTO-based OLED devices within the tunnelling region. Here the maximum value of current efficiency is found to be 2.83 cd / A.

The Blue-Shift of Photoluminescence Spectra of Zinc Complexes of 8-Hydroxyquinoline by Addition of ZnO Nanoparticles

NASA Astrophysics Data System (ADS)

Keshmiri, Laleh; Elahi, Seyed Mohammad; Jafari, Mohammad Reza; Jafari, Fatemeh; Parhizgar, Sara Sadat

2018-02-01

In this research, an organo-metallic complex based on zinc ions (Znq2), which can be used in organic light-emitting diodes, was investigated. Nanoparticles of ZnO were produced and added to the Znq2 complex. By means of x-ray diffraction, the structure of Znq2 complex and ZnO nanoparticles and the energy levels of them were determined from cyclic-voltammetry analysis. From thermal gravimetric studies, it was found that the complexes have a high thermal stability in the air atmosphere. The purity of samples was confirmed by Fourier transform infrared spectroscopy. The maximum intensity of the photoluminescence spectrum of Znq2 occurred at 565 nm and showed a blue shift to 511 nm by adding ZnO nanoparticles to the Znq2 complex. The optical and electrical properties of the Znq2 and the mixture of Znq2 and ZnO nano powders were studied in order to find any possible applications in organic light emitting devices.

Influence of emissive layer thickness on electrical characteristics of polyfluorene copolymer based polymer light emitting diodes

NASA Astrophysics Data System (ADS)

Das, D.; Gopikrishna, P.; Singh, A.; Dey, A.; Iyer, P. K.

2016-04-01

Polymer light emitting diodes (PLEDs) with a device configuration of ITO/PEDOT:PSS/PFONPN01 [Poly [2,7-(9,9’-dioctylfluorene)-co-N-phenyl-1,8-naphthalimide (99:01)]/LiF/Al have been fabricated by varying the emissive layer (EML) thickness (40/65/80/130 nm) and the influence of EML thickness on the electrical characteristics of PLED has been studied. PLED can be modelled as a simple combination of resistors and capacitors. The impedance spectroscopy analysis showed that the devices with different EML thickness had different values of parallel resistance (RP) and the parallel capacitance (CP). The impedance of the devices is found to increase with increasing EML thickness resulting in an increase in the driving voltage. The device with an emissive layer thickness of 80nm, spin coated from a solution of concentration 15 mg/mL is found to give the best device performance with a maximum brightness value of 5226 cd/m2.

Surface hole gas enabled transparent deep ultraviolet light-emitting diode

NASA Astrophysics Data System (ADS)

Zhang, Jianping; Gao, Ying; Zhou, Ling; Gil, Young-Un; Kim, Kyoung-Min

2018-07-01

The inherent deep-level nature of acceptors in wide-band-gap semiconductors makes p-ohmic contact formation and hole supply difficult, impeding progress for short-wavelength optoelectronics and high-power high-temperature bipolar electronics. We provide a general solution by demonstrating an ultrathin rather than a bulk wide-band-gap semiconductor to be a successful hole supplier and ohmic contact layer. Free holes in this ultrathin semiconductor are assisted to activate from deep acceptors and swept to surface to form hole gases by a large electric field, which can be provided by engineered spontaneous and piezoelectric polarizations. Experimentally, a 6 nm thick AlN layer with surface hole gas had formed p-ohmic contact to metals and provided sufficient hole injection to a 280 nm light-emitting diode, demonstrating a record electrical-optical conversion efficiency exceeding 8.5% at 20 mA (55 A cm‑2). Our approach of forming p-type wide-band-gap semiconductor ohmic contact is critical to realizing high-efficiency ultraviolet optoelectronic devices.

A quantum light-emitting diode for the standard telecom window around 1,550 nm.

PubMed

Müller, T; Skiba-Szymanska, J; Krysa, A B; Huwer, J; Felle, M; Anderson, M; Stevenson, R M; Heffernan, J; Ritchie, D A; Shields, A J

2018-02-28

Single photons and entangled photon pairs are a key resource of many quantum secure communication and quantum computation protocols, and non-Poissonian sources emitting in the low-loss wavelength region around 1,550 nm are essential for the development of fibre-based quantum network infrastructure. However, reaching this wavelength window has been challenging for semiconductor-based quantum light sources. Here we show that quantum dot devices based on indium phosphide are capable of electrically injected single photon emission in this wavelength region. Using the biexciton cascade mechanism, they also produce entangled photons with a fidelity of 87 ± 4%, sufficient for the application of one-way error correction protocols. The material system further allows for entangled photon generation up to an operating temperature of 93 K. Our quantum photon source can be directly integrated with existing long distance quantum communication and cryptography systems, and provides a promising material platform for developing future quantum network hardware.

Highly-flexible, ultra-thin, and transparent single-layer graphene/silver composite electrodes for organic light emitting diodes

NASA Astrophysics Data System (ADS)

Li, Kun; Wang, Hu; Li, Huiying; Li, Ye; Jin, Guangyong; Gao, Lanlan; Marco, Mazzeo; Duan, Yu

2017-08-01

Transparent conductive electrode (TCE) platforms are required in many optoelectronic devices, including organic light emitting diodes (OLEDs). To date, indium tin oxide based electrodes are widely used in TCEs but they still have few limitations in term of achieving flexible OLEDs and display techniques. In this paper, highly-flexible and ultra-thin TCEs were fabricated for use in OLEDs by combining single-layer graphene (SLG) with thin silver layers of only several nanometers in thickness. The as-prepared SLG + Ag (8 nm) composite electrodes showed low sheet resistances of 8.5 Ω/□, high stability over 500 bending cycles, and 74% transmittance at 550 nm wavelength. Furthermore, SLG + Ag composite electrodes employed as anodes in OLEDs delivered turn-on voltages of 2.4 V, with luminance exceeding 1300 cd m-2 at only 5 V, and maximum luminance reaching up 40 000 cd m-2 at 9 V. Also, the devices could work normally under less than the 1 cm bending radius.

Infrared Organic Light-Emitting Diodes with Carbon Nanotube Emitters.

PubMed

Graf, Arko; Murawski, Caroline; Zakharko, Yuriy; Zaumseil, Jana; Gather, Malte C

2018-03-01

While organic light-emitting diodes (OLEDs) covering all colors of the visible spectrum are widespread, suitable organic emitter materials in the near-infrared (nIR) beyond 800 nm are still lacking. Here, the first OLED based on single-walled carbon nanotubes (SWCNTs) as the emitter is demonstrated. By using a multilayer stacked architecture with matching charge blocking and charge-transport layers, narrow-band electroluminescence at wavelengths between 1000 and 1200 nm is achieved, with spectral features characteristic of excitonic and trionic emission of the employed (6,5) SWCNTs. Here, the OLED performance is investigated in detail and it is found that local conduction hot-spots lead to pronounced trion emission. Analysis of the emissive dipole orientation shows a strong horizontal alignment of the SWCNTs with an average inclination angle of 12.9° with respect to the plane, leading to an exceptionally high outcoupling efficiency of 49%. The SWCNT-based OLEDs represent a highly attractive platform for emission across the entire nIR. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Engineering triangular carbon quantum dots with unprecedented narrow bandwidth emission for multicolored LEDs.

PubMed

Yuan, Fanglong; Yuan, Ting; Sui, Laizhi; Wang, Zhibin; Xi, Zifan; Li, Yunchao; Li, Xiaohong; Fan, Louzhen; Tan, Zhan'ao; Chen, Anmin; Jin, Mingxing; Yang, Shihe

2018-06-08

Carbon quantum dots (CQDs) have emerged as promising materials for optoelectronic applications on account of carbon's intrinsic merits of high stability, low cost, and environment-friendliness. However, the CQDs usually give broad emission with full width at half maximum exceeding 80 nm, which fundamentally limit their display applications. Here we demonstrate multicolored narrow bandwidth emission (full width at half maximum of 30 nm) from triangular CQDs with a quantum yield up to 54-72%. Detailed structural and optical characterizations together with theoretical calculations reveal that the molecular purity and crystalline perfection of the triangular CQDs are key to the high color-purity. Moreover, multicolored light-emitting diodes based on these CQDs display good stability, high color-purity, and high-performance with maximum luminance of 1882-4762 cd m -2 and current efficiency of 1.22-5.11 cd A -1 . This work will set the stage for developing next-generation high-performance CQDs-based light-emitting diodes.

Improvement of electrical and optical properties of p-GaN Ohmic metals under ultraviolet light irradiation annealing processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chae, S.W.; Yoon, S.K.; Kwak, J.S.

2006-05-15

We report the improvement of electrical and optical properties of p-GaN Ohmic metals, ZnNi(10 nm)/Au(10 nm), by ultraviolet (UV) light irradiation. After UV light irradiation, the specific contact resistance of p-GaN decreased slightly from 2.99x10{sup -4} to 2.54x10{sup -4} {omega} cm{sup 2}, while the transmittance of the contact layer increased form 75% to 85% at a wavelength of 460 nm. In addition, the forward voltage of InGaN/GaN light-emitting diode chip at 20 mA decreased from 3.55 to 3.45 V, and the output power increased form 18 to 25 mW by UV light irradiation. The low resistance and high transmittance ofmore » the p-GaN Ohmic metals are attributed to the reduced Shottky barrier by the formation of gallium oxide and the increased oxidation of p-Ohmic metals, respectively, due to ozone generated form oxygen during UV light irradiation.« less

Effect of SiO 2/Si 3N 4 dielectric distributed Bragg reflectors (DDBRs) for Alq 3/NPB thin-film resonant cavity organic light emitting diodes

NASA Astrophysics Data System (ADS)

Lei, Po-Hsun; Wang, Shun-Hsi; Juang, Fuh Shyang; Tseng, Yung-Hsin; Chung, Meng-Jung

2010-05-01

In this article, we report on the effect of SiO 2/Si 3N 4 dielectric distributed Bragg reflectors (DDBRs) for Alq 3/NPB thin-film resonant cavity organic light emitting diode (RCOLED) in increasing the light output intensity and reducing the linewidth of spontaneous emission spectrum. The optimum DDBR number is found as 3 pairs. The device performance will be bad by further increasing or decreasing the number of DDBR. As compared to the conventional Alq 3/NPB thin-film organic light emitting diode (OLED), the Alq 3/NPB thin-film RCOLED with 3-pair DDBRs has the superior electrical and optical characteristics including a forward voltage of 6 V, a current efficiency of 3.4 cd/A, a luminance of 2715 cd/m 2 under the injection current density of 1000 A/m 2, and a full width at half maximum (FWHM) of 12 nm for emission spectrum over the 5-9 V bias range. These results represent that the Alq 3/NPB thin-film OLED with DDBRs shows a potential as the light source for plastic optical fiber (POF) communication system.

Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots

PubMed Central

Li, Hongjian; Li, Panpan; Kang, Junjie; Ding, Jiianfeng; Ma, Jun; Zhang, Yiyun; Yi, Xiaoyan; Wang, Guohong

2016-01-01

We have presented broadband full-color monolithic InGaN light-emitting diodes (LEDs) by self-assembled InGaN quantum dots (QDs) using metal organic chemical vapor deposition (MOCVD). The electroluminescence spectra of the InGaN QDs LEDs are extremely broad span from 410 nm to 720 nm with a line-width of 164 nm, covering entire visible wavelength range. A color temperature of 3370 K and a color rendering index of 69.3 have been achieved. Temperature-dependent photoluminescence measurements reveal a strong carriers localization effect of the InGaN QDs layer by obvious blue-shift of emission peak from 50 K to 300 K. The broadband luminescence spectrum is believed to be attributed to the injected carriers captured by the different localized states of InGaN QDs with various sizes, shapes and indium compositions, leading to a full visible color emission. The successful realization of our broadband InGaN QDs LEDs provide a convenient and practical method for the fabrication of GaN-based monolithic full-color LEDs in wafer scale. PMID:27734917

Self-assembled multilayers and photoluminescence properties of a new water-soluble poly(para-phenylene)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, X.; Li, D.; Luett, M.

1998-07-01

This paper reports the synthesis and characterizations of a new water-soluble poly(paraphenylene) (PPP) and its applications in preparing self-assembled multi-layer films. This new water-soluble conducting polymer was prepared through the sulfonation reaction of poly(p-quarterphenylene-2,2{prime}-dicarboxylic acid). The incorporation of sulfonate groups has dramatically improved PPP's solubility in water at a wide pH range, whereas previous PPP is only slightly soluble in basic solutions. Dilute aqueous solutions of this polymer with acidic, neutral or basic pH emit brilliant blue light while irradiated with UV light. The sulfonated PPP emits from 350 nm to 455 nm with a maximum intensity at 380 nm.more » Self-assembled multilayers of this sulfonated PPP were constructed with a positively charged polymer poly(diallyl dimethyl ammonium chloride) and characterized with various surface analyses. Conductive (RuO{sub 2} and ITO), semiconductive (Si wafer), and non-conductive (SiO{sub 2}) substrates were used in the preparation of self-assembled multilayers. Electrical, optical and structural properties of these novel self-assembled thin films will be discussed.« less

Self-assembled multilayers and photoluminescence properties of a new water-soluble poly(para-phenylene)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, X.; Li, D.Q.; Luett, M.

1998-03-01

This paper reports the synthesis and characterizations of a new water-soluble poly(para-phenylene) (PPP) and its applications in preparing self-assembled multilayer films. This new water-soluble conducting polymer was prepared through the sulfonation reaction of poly(p-quarterphenylene-2,2{prime}-dicarboxylic acid). The incorporation of sulfonate groups has dramatically improved PPP`s solubility in water at a wide pH range, whereas previous PPP is only slightly soluble in basic solutions. Dilute aqueous solutions of this polymer with acidic, neutral or basic pH emit brilliant blue light while irradiated with UV light. The sulfonated PPP emits from 350 nm to 455 nm with a maximum intensity at 380 nm.more » Self-assembled multilayers of this sulfonated PPP were constructed with a positively charged polymer poly(diallyl dimethyl ammonium chloride) and characterized with various surface analyses. Conductive (RuO{sub 2} and ITO), semiconductive (Si wafer), and non-conductive (SiO{sub 2}) substrates were used in the preparation of self-assembled multilayers. Electrical, optical and structural properties of these novel self-assembled thin films will be discussed.« less

Fabrication of CuInS2/ZnS quantum dots-based white light-emitting diodes with high color rendering index

NASA Astrophysics Data System (ADS)

Hsiao, Chih-Chun; Su, Yu-Sheng; Chung, Shu-Ru

2017-09-01

Among solid-state lighting technology, phosphor-converted white light-emitting diodes (pc-WLEDs) are excellent candidates to replace incandescent lamps for their merit of high energy conservation, long lifetime, high luminous efficiency as well as polarized emissions. Semiconductor quantum dots (QDs) are emerging color tunable emissive light converters. They have shown significant promise as light emitters, as solar cells, and in biological imaging. It has been demonstrated that the pc-WLED devices integrated with red emissive ZnCdSe QDs show improved color rendering index of device. However, cadmium-based QDs have limited future owing to the well-known toxicity. Recently, non-cadmium luminescence materials, i.e. CuInS2-based QDs, are investigated as desirable low toxic alternatives. Particularly, CuInS2-based QDs exhibit very broad emissions spectra with full width at half maximum (FWHM) of 100-120 nm, large Stokes shifts of 200 300 meV and finely-tunable emissions. In order to adjust emission wavelengths and improved quantum yield (QY), CuInS2/ZnS (CIS/ZnS) core/shell structure was introduced. Therefore, CIS/ZnS QDs have been extensively investigated and be used as color converter in solid-state lighting. Synthesis and application of CuInS2/ZnS core/shell QDs are conducted using a hot injection route. CIS/ZnS core/shell QDs with molar ratio of Cu:In equal to 1:4 are prepared. For WLED fabrication, the CIS/ZnS QD is dispersed in toluene first, and then it is blended with transparent acrylic-based UV resin. Subsequently, the commercial green-emitting Lu3Al5O12: Ce3+ (LuAG) phosphors are mixed with QDs-resin mixture. After that, the QDs-phosphors-resin mixtures are put in the oven at 140 °C for 1 h to evaporate the toluene. Subsequently, the homogeneous QDs-phosphors-resin mixture is dropped on the top of a blue LED chip (InGaN). Then, the device is cured by 400 W UV light to form WLED. The emission wavelength of CIS/ZnS QD exhibits yellow region of 552 nm with QY of 76 %, and with relatively broad bandwidth of 86 nm. The structure of CIS/ZnS belongs to chalcopyrite phase and its average particle size is 3.2 nm. The luminous efficacy, color rendering index (CRI), correlated color temperature (CCT), and CIE chromaticity coordinate of WLED is 47 lm/W, 89, 5661 K, and (0.33, 0.29), respectively.

An open pilot study of ambulatory photodynamic therapy using a wearable low-irradiance organic light-emitting diode light source in the treatment of nonmelanoma skin cancer.

PubMed

Attili, S K; Lesar, A; McNeill, A; Camacho-Lopez, M; Moseley, H; Ibbotson, S; Samuel, I D W; Ferguson, J

2009-07-01

Photodynamic therapy (PDT) is a popular treatment for nonmelanoma skin cancer with clearance rates of between 70% and 100%. Although reported to have a superior cosmetic outcome, the inconvenience of hospital visits and discomfort during therapy are considered drawbacks. To present an open pilot study of a low-irradiance, potentially disposable, lightweight, organic light-emitting diode (OLED), which is an area-emitting light source (2 cm diameter), suitable for ambulatory PDT. Twelve patients with Bowen's disease (eight) and superficial basal cell carcinoma (four) < 2 cm in diameter were recruited into the study following histological confirmation of the diagnosis. Two treatments (45-60 J cm(-2) red light, 550-750 nm, peak 620 nm, irradiance 5 mW cm(-2)) were administered 1 month apart following application of aminolaevulinic acid for 4 h. At the 12-month follow-up, seven of the 12 patients remained clear, with four of the nonresponders demonstrating peripheral margin failure. Patients were scored for pain during and immediately after treatment using the numerical rating scale (NRS; 1-10). All 12 subjects scored pain as < 2 using the NRS (median score 1). In contrast, a similar cohort of 50 consecutive patients from our routine PDT clinic (Aktilite inorganic LED source; 75 J cm(-2), irradiance 80 mW cm(-2)) scored a median of 6 on the NRS. Pain and inconvenience are practical barriers to the use of conventional PDT. This pilot study suggests that OLED-PDT is less painful than conventional PDT with the added advantage of being lightweight, and therefore has the potential for more convenient 'home PDT'. These results need to be validated in larger studies.

Novel Na(+) doped Alq3 hybrid materials for organic light-emitting diode (OLED) devices and flat panel displays.

PubMed

Bhagat, S A; Borghate, S V; Kalyani, N Thejo; Dhoble, S J

2015-05-01

Pure and Na(+) -doped Alq3 complexes were synthesized by a simple precipitation method at room temperature, maintaining a stoichiometric ratio. These complexes were characterized by X-ray diffraction, Fourier transform infrared (FTIR), UV/Vis absorption and photoluminescence (PL) spectra. The X-ray diffractogram exhibits well-resolved peaks, revealing the crystalline nature of the synthesized complexes, FTIR confirms the molecular structure and the completion of quinoline ring formation in the metal complex. UV/Vis absorption and PL spectra of sodium-doped Alq3 complexes exhibit high emission intensity in comparison with Alq3 phosphor, proving that when doped in Alq3 , Na(+) enhances PL emission intensity. The excitation spectra of the synthesized complexes lie in the range 242-457 nm when weak shoulders are also considered. Because the sharp excitation peak falls in the blue region of visible radiation, the complexes can be employed for blue chip excitation. The emission wavelength of all the synthesized complexes lies in the bluish green/green region ranging between 485 and 531 nm. The intensity of the emission wavelength was found to be elevated when Na(+) is doped into Alq3 . Because both the excitation and emission wavelengths fall in the visible region of electromagnetic radiation, these phosphors can also be employed to improve the power conversion efficiency of photovoltaic cells by using the solar spectral conversion principle. Thus, the synthesized phosphors can be used as bluish green/green light-emitting phosphors for organic light-emitting diodes, flat panel displays, solid-state lighting technology - a step towards the desire to reduce energy consumption and generate pollution free light. Copyright © 2014 John Wiley & Sons, Ltd.

Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white-light emission

NASA Astrophysics Data System (ADS)

Kowsz, Stacy J.; Pynn, Christopher D.; Wu, Feng; Farrell, Robert M.; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji

2016-02-01

We report a semipolar III-nitride device in which an electrically injected blue light emitting diode optically pumps monolithic long wavelength emitting quantum wells (QWs) to create polarized white light. We have demonstrated an initial device with emission peaks at 440 nm and 560 nm from the electrically injected and optically pumped QWs, respectively. By tuning the ratio of blue to yellow, white light was measured with a polarization ratio of 0.40. High indium content InGaN is required for long wavelength emission but is difficult to achieve because it requires low growth temperatures and has a large lattice mismatch with GaN. This device design incorporates optically pumped QWs for long wavelength emission because they offer advantages over using electrically injected QWs. Optically pumped QWs do not have to be confined within a p-n junction, and carrier transport is not a concern. Thus, thick GaN barriers can be incorporated between multiple InGaN QWs to manage stress. Optically pumping long wavelength emitting QWs also eliminates high temperature steps that degrade high indium content InGaN but are required when growing p-GaN for an LED structure. Additionally, by eliminating electrical injection, the doping profile can instead be engineered to affect the emission wavelength. We discuss ongoing work focused on improving polarized white light emission by optimizing the optically pumped QWs. We consider the effects of growth conditions, including: trimethylindium (TMI) flow rate, InGaN growth rate, and growth temperature. We also examine the effects of epitaxial design, including: QW width, number of QWs, and doping.

Photoluminescence properties of a new orange-red-emitting Sm(3+)-La3SbO7 phosphor.

PubMed

Li, Zeng-Mei; Deng, Li-Gang; Zhao, Shan-Cang; Zhang, Shu-Qiu; Guo, Chang-Ying; Liang, Jing-Yun; Yue, Hui; Wan, Chun-Yan

2016-03-01

The antimonate compound La3SbO7 has high chemical stability, lattice stiffness and thermal stability. Orange-red-emitting antimonate-based phosphors La3SbO7:xSm(3+) (x = 0.02, 0.05, 0.08, 0.10, 0.15, 0.20 and 0.25) were synthesized. The phase structure and photoluminescence properties of these phosphors were investigated. The emission spectrum obtained on excitation at 407 nm contained exclusively the characteristic emissions of Sm(3+) at 568, 608, 654 and 716 nm, which correspond to the transitions from (4)G5/2 to (6)H5/2, (6)H7/2, (6)H9/2 and (6)H11/2 of Sm(3+), respectively. The strongest emission was located at 608 nm due to the (4)G5/2→(6)H7/2 transition of Sm(3+), generating bright orange-red light. The critical quenching concentration of Sm(3+) in La3SbO7:Sm(3+) phosphor was determined as 10% and the energy transfer between Sm(3+) was found to be through an exchange interaction. The International Commission on Illumination chromaticity coordinates of the La3SbO7:0.10Sm(3+) phosphors are located in the orange-red region. The La3SbO7:Sm(3+) phosphors may be potentially used as red phosphors for white light-emitting diodes. Copyright © 2015 John Wiley & Sons, Ltd.

The improvement of GaN-based light-emitting diodes using nanopatterned sapphire substrate with small pattern spacing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Wang, Junxi

2014-02-15

Self-assembly SiO{sub 2} nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, themore » external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period.« less

Development of red-shifted mutants derived from luciferase of Brazilian click beetle Pyrearinus termitilluminans

NASA Astrophysics Data System (ADS)

Nishiguchi, Tomoki; Yamada, Toshimichi; Nasu, Yusuke; Ito, Mashiho; Yoshimura, Hideaki; Ozawa, Takeaki

2015-10-01

Luciferase, a bioluminescent protein, has been used as an analytical tool to visualize intracellular phenomena. Luciferase with red light emission is particularly useful for bioluminescence imaging because of its high transmittance in mammalian tissues. However, the luminescence intensity of existing luciferases with their emission over 600 nm is insufficient for imaging studies because of their weak intensities. We developed mutants of Emerald luciferase (Eluc) from Brazilian click beetle (Pyrearinus termitilluminans), which emits the strongest bioluminescence among beetle luciferases. We successively introduced four amino acid mutations into the luciferase based on a predicted structure of Eluc using homology modeling. Results showed that quadruple mutations R214K/H241K/S246H/H347A into the beetle luciferase emit luminescence with emission maximum at 626 nm, 88-nm red-shift from the wild-type luciferase. This mutant luciferase is anticipated for application in in vivo multicolor imaging in living samples.

Development of red-shifted mutants derived from luciferase of Brazilian click beetle Pyrearinus termitilluminans.

PubMed

Nishiguchi, Tomoki; Yamada, Toshimichi; Nasu, Yusuke; Ito, Mashiho; Yoshimura, Hideaki; Ozawa, Takeaki

2015-10-01

Luciferase, a bioluminescent protein, has been used as an analytical tool to visualize intracellular phenomena. Luciferase with red light emission is particularly useful for bioluminescence imaging because of its high transmittance in mammalian tissues. However, the luminescence intensity of existing luciferases with their emission over 600 nm is insufficient for imaging studies because of their weak intensities. We developed mutants of Emerald luciferase (Eluc) from Brazilian click beetle (Pyrearinus termitilluminans), which emits the strongest bioluminescence among beetle luciferases. We successively introduced four amino acid mutations into the luciferase based on a predicted structure of Eluc using homology modeling. Results showed that quadruple mutations R214K/H241K/S246H/H347A into the beetle luciferase emit luminescence with emission maximum at 626 nm, 88-nm red-shift from the wild-type luciferase. This mutant luciferase is anticipated for application in in vivo multicolor imaging in living samples.

Sub-50-nm self-assembled nanotextures for enhanced broadband antireflection in silicon solar cells.

PubMed

Rahman, Atikur; Ashraf, Ahsan; Xin, Huolin; Tong, Xiao; Sutter, Peter; Eisaman, Matthew D; Black, Charles T

2015-01-21

Materials providing broadband light antireflection have applications as highly transparent window coatings, military camouflage, and coatings for efficiently coupling light into solar cells and out of light-emitting diodes. In this work, densely packed silicon nanotextures with feature sizes smaller than 50 nm enhance the broadband antireflection compared with that predicted by their geometry alone. A significant fraction of the nanotexture volume comprises a surface layer whose optical properties differ substantially from those of the bulk, providing the key to improved performance. The nanotexture reflectivity is quantitatively well-modelled after accounting for both its profile and changes in refractive index at the surface. We employ block copolymer self-assembly for precise and tunable nanotexture design in the range of ~10-70 nm across macroscopic solar cell areas. Implementing this efficient antireflection approach in crystalline silicon solar cells significantly betters the performance gain compared with an optimized, planar antireflection coating.

The modification of spectral characteristics of cytostatics by optical beams

NASA Astrophysics Data System (ADS)

Pascu, Mihail Lucian; Brezeanu, Mihail; Carstocea, Benone D.; Voicu, Letitia; Gazdaru, Doina M.; Smarandache, Adriana A.

2004-10-01

Besides the biochemical action of methotrexate (MTX) and 5-fluorouracil (FU) their effect in destroying cancer tumours could be enhanced by exposure to light at different doses. Absorption, excitation and emission spectra of 10-4M - 10-5M MTX solutions in natural saline and sodium hydroxide at pH = 8.4 were measured, while their exposure to coherent and uncoherent light in the visible and near ultraviolet (UV) spectral ranges was made (Hg lamps and Nitrogen pulsed laser radiation were used). Absorption spectra exhibit spectral bands in the range 200 nm - 450 nm. The 200 - 450 nm excitation spectra were measured with emission centered on 470 nm; MTX fluorescence excitation was measured at 390 nm and the emission was detected between 400 nm and 600 nm showing a maximum at 470 nm. Spectra modifications, nonlinearly depending on exposure time (varying from 1 min to 20 min), evidenced MTX photo-dissociation to the fluorescent compound 2,4 diamino-formylpteridine. In the 5-FU case the absorption spectra exhibit bands between 200 nm and 450 nm. The emission fluorescence spectra were measured between 400 nm and 600 nm, with λex = 350 nm for UV Hg lamp and with λex = 360 nm for laser irradiated samples; at irradiation with N2 laser emitted radiation the excitation spectra were measured in the range of 200 nm - 400 nm, with λem = 440 nm. New vascularity rapid destruction was observed for conjunctive impregnated with 5-FU solution whilst exposed to incoherent UV and visible light.

Low threshold distributed Bragg reflector surface emitting laser diode with semiconductor air-bridge-supported top mirror

NASA Astrophysics Data System (ADS)

Hsin, W.; Du, G.; Gamelin, J. K.; Malloy, K. J.; Wang, S.

1990-03-01

A surface emitting laser diode (SELD) with two distributed Bragg reflectors (DBR) and semiconductor multilayer air-bridge-supported top mirror is fabricated. A low threshold current of 1.5 mA is achieved under room temperature CW operation. The spectrum shows a strong peak at 891 nm with a FWHM of 10 A. With light emission from the top Bragg reflector instead of from the back side of the substrate, laser arrays are easily formed with this novel structure.

Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Presa, S., E-mail: silvino.presa@tyndall.ie; School of Engineering, University College Cork, Cork; Maaskant, P. P.

We present a comprehensive study of the emission spectra and electrical characteristics of InGaN/GaN multi-quantum well light-emitting diode (LED) structures under resonant optical pumping and varying electrical bias. A 5 quantum well LED with a thin well (1.5 nm) and a relatively thick barrier (6.6 nm) shows strong bias-dependent properties in the emission spectra, poor photovoltaic carrier escape under forward bias and an increase in effective resistance when compared with a 10 quantum well LED with a thin (4 nm) barrier. These properties are due to a strong piezoelectric field in the well and associated reduced field in the thickermore » barrier. We compare the voltage ideality factors for the LEDs under electrical injection, light emission with current, photovoltaic mode (PV) and photoluminescence (PL) emission. The PV and PL methods provide similar values for the ideality which are lower than for the resistance-limited electrical method. Under optical pumping the presence of an n-type InGaN underlayer in a commercial LED sample is shown to act as a second photovoltaic source reducing the photovoltage and the extracted ideality factor to less than 1. The use of photovoltaic measurements together with bias-dependent spectrally resolved luminescence is a powerful method to provide valuable insights into the dynamics of GaN LEDs.« less

A multichannel visible spectroscopy system for the ITER-like W divertor on EAST.

PubMed

Mao, Hongmin; Ding, Fang; Luo, Guang-Nan; Hu, Zhenhua; Chen, Xiahua; Xu, Feng; Yang, Zhongshi; Chen, Jingbo; Wang, Liang; Ding, Rui; Zhang, Ling; Gao, Wei; Xu, Jichan; Wu, Chengrui

2017-04-01

To facilitate long-pulse high power operation, an ITER-like actively cooled tungsten (W) divertor was installed in Experimental Advanced Superconducting Tokamak (EAST) to replace the original upper graphite divertor in 2014. A dedicated multichannel visible spectroscopic diagnostic system has been accordingly developed for the characterization of the plasma and impurities in the W divertor. An array of 22 lines-of-sight (LOSs) provides a profile measurement of the light emitted from the plasma along upper outer divertor, and the other 17 vertical LOSs view the upper inner divertor, achieving a 13 mm poloidal resolution in both regions. The light emitted from the plasma is collected by a specially designed optical lens assembly and then transferred to a Czerny-Turner spectrometer via 40 m quartz fibers. At the end, the spectra dispersed by the spectrometer are recorded with an Electron-Multiplying Charge Coupled Device (EMCCD). The optical throughput and quantum efficiency of the system are optimized in the wavelength range 350-700 nm. The spectral resolution/coverage can be adjusted from 0.01 nm/3 nm to 0.41 nm/140 nm by switching the grating with suitable groove density. The frame rate depends on the setting of LOS number in EMCCD and can reach nearly 2 kHz for single LOS detection. The light collected by the front optical lens can also be divided and partly transferred to a photomultiplier tube array with specified bandpass filter, which can provide faster sampling rates by up to 200 kHz. The spectroscopic diagnostic is routinely operated in EAST discharges with absolute optical calibrations applied before and after each campaign, monitoring photon fluxes from impurities and H recycling in the upper divertor. This paper presents the technical details of the diagnostic and typical measurements during EAST discharges.

A multichannel visible spectroscopy system for the ITER-like W divertor on EAST

NASA Astrophysics Data System (ADS)

Mao, Hongmin; Ding, Fang; Luo, Guang-Nan; Hu, Zhenhua; Chen, Xiahua; Xu, Feng; Yang, Zhongshi; Chen, Jingbo; Wang, Liang; Ding, Rui; Zhang, Ling; Gao, Wei; Xu, Jichan; Wu, Chengrui

2017-04-01

To facilitate long-pulse high power operation, an ITER-like actively cooled tungsten (W) divertor was installed in Experimental Advanced Superconducting Tokamak (EAST) to replace the original upper graphite divertor in 2014. A dedicated multichannel visible spectroscopic diagnostic system has been accordingly developed for the characterization of the plasma and impurities in the W divertor. An array of 22 lines-of-sight (LOSs) provides a profile measurement of the light emitted from the plasma along upper outer divertor, and the other 17 vertical LOSs view the upper inner divertor, achieving a 13 mm poloidal resolution in both regions. The light emitted from the plasma is collected by a specially designed optical lens assembly and then transferred to a Czerny-Turner spectrometer via 40 m quartz fibers. At the end, the spectra dispersed by the spectrometer are recorded with an Electron-Multiplying Charge Coupled Device (EMCCD). The optical throughput and quantum efficiency of the system are optimized in the wavelength range 350-700 nm. The spectral resolution/coverage can be adjusted from 0.01 nm/3 nm to 0.41 nm/140 nm by switching the grating with suitable groove density. The frame rate depends on the setting of LOS number in EMCCD and can reach nearly 2 kHz for single LOS detection. The light collected by the front optical lens can also be divided and partly transferred to a photomultiplier tube array with specified bandpass filter, which can provide faster sampling rates by up to 200 kHz. The spectroscopic diagnostic is routinely operated in EAST discharges with absolute optical calibrations applied before and after each campaign, monitoring photon fluxes from impurities and H recycling in the upper divertor. This paper presents the technical details of the diagnostic and typical measurements during EAST discharges.

GOES Satellite Data Validation Via Hand-held 4 LED Sun Photometer at Norfolk State University

NASA Technical Reports Server (NTRS)

Reynolds, Arthur, Jr.; Jackson, Tyrone; Reynolds, Kevin; Davidson, Cassy; Coope-Pabis, Barbara

2005-01-01

Sun photometry is a passive means of measuring a quantity of light radiation. The GIFTS- IOMI/GLOBE Water Vapor/Haze Sun photometer contains four light emitting diodes (LEDs), which are used to convert photocurrent to voltage. The intensity of the incoming and outgoing radiation as detected on the Earth s surface can be affected by aerosols and gases in the atmosphere. The focus of this research is primarily on aerosol and water vapor particles that absorb and reemit energy. Two LEDs in the photometer correspond to light scattered at 530 nm (green spectrum) and 620 nm (red spectrum). They collect data pertaining to aerosols that scatter light. The other two LEDs detect the light scattered by water vapor at wavelengths of 820 nm and 920 nm. The water vapor measurements will be compared to data collected by the Geostationary Observation Environmental Satellite (GOES). Before a comparison can be made, the extraterrestrial constant (ET), which is intrinsic to each sun photometer, must be measured. This paper will present determination of the ET constant, from which the aerosol optical thickness (AOT) can be computed for comparison to the GOES satellite to ascertain the reliability of the sun photometer.

Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

NASA Astrophysics Data System (ADS)

Yu, Zhao; Bingfeng, Fan; Yiting, Chen; Yi, Zhuo; Zhoujun, Pang; Zhen, Liu; Gang, Wang

2016-07-01

We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage. ).

Light emitting fabric for photodynamic treatment of actinic keratosis

NASA Astrophysics Data System (ADS)

Thecua, E.; Vicentini, C.; Vignion, A.-S.; Lecomte, F.; Deleporte, P.; Mortier, L.; Szeimies, R.-M.; Mordon, S.

2017-02-01

The integration of optical fibers into flexible textile structures, by using knitting or weaving processes can allow the development of flexible light sources. The paper aims to present a new technology: Light Emitting Fabrics (LEF), which can be used for example for PDT of Actinic Keratosis in Dermatology. The predetermined macro-bending of optical fibers, led to a homogeneous side emission of light over the entire surface of the fabric. Tests showed that additional curvatures when applying the LEF on non-planar surfaces had no impact on light delivery and proved that LEF can adapt to the human morphology. The ability of the LEF, coupled with a 635nm LASER source, to deliver a homogeneous light to lesions is currently assessed in a clinical trial for the treatment of AK of the scalp by PDT. The low irradiance and progressive activation of the photosensitizer ensure a pain reduction, compared to discomfort levels experienced by patients during a conventional PDT session.

Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods

NASA Astrophysics Data System (ADS)

Wang, Dong-Sheng; Zhang, Ke-Xiong; Liang, Hong-Wei; Song, Shi-Wei; Yang, De-Chao; Shen, Ren-Sheng; Liu, Yang; Xia, Xiao-Chuan; Luo, Ying-Min; Du, Guo-Tong

2014-02-01

Near-ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) are grown by low-pressure metal-organic chemical vapor deposition. The scanning electronic microscope image shows that the p-GaN micro-rods are formed above the interface of p-AlGaN/p-GaN due to the rapid growth rate of p-GaN in the vertical direction. The p-GaN micro-rods greatly increase the escape probability of photons inside the LED structure. Electroluminescence intensities of the 372 nm UV LED lamps with p-GaN micro rods are 88% higher than those of the flat surface LED samples.

Point-of-use water disinfection using ultraviolet and visible light-emitting diodes.

PubMed

Lui, Gough Yumu; Roser, David; Corkish, Richard; Ashbolt, Nicholas J; Stuetz, Richard

2016-05-15

Improvements in point-of-use (POU) drinking water disinfection technologies for remote and regional communities are urgently needed. Conceptually, UV-C light-emitting diodes (LEDs) overcome many drawbacks of low-pressure mercury tube based UV devices, and UV-A or visible light LEDs also show potential. To realistically evaluate the promise of LED disinfection, our study assessed the performance of a model 1.3 L reactor, similar in size to solar disinfection bottles. In all, 12 different commercial or semi-commercial LED arrays (270-740 nm) were compared for their ability to inactivate Escherichia coli K12 ATCC W3110 and Enterococcus faecalis ATCC 19433 over 6h. Five log10 and greater reductions were consistently achieved using the 270, 365, 385 and 405 nm arrays. The output of the 310 nm array was insufficient for useful disinfection while 430 and 455 nm performance was marginal (≈ 4.2 and 2.3-log10s E. coli and E. faecalis over the 6h). No significant disinfection was observed with the 525, 590, 623, 660 and 740 nm arrays. Delays in log-phase inactivation of E. coli were observed, particularly with UV-A wavelengths. The radiation doses required for >3-log10 reduction of E. coli and E. faecalis differed by 10 fold at 270 nm but only 1.5-2.5 fold at 365-455 nm. Action spectra, consistent with the literature, were observed with both indicators. The design process revealed cost and technical constraints pertaining to LED electrical efficiency, availability and lifetime. We concluded that POU LED disinfection using existing LED technology is already technically possible. UV-C LEDs offer speed and energy demand advantages, while UV-A/violet units are safer. Both approaches still require further costing and engineering development. Our study provides data needed for such work. Copyright © 2016 Elsevier B.V. All rights reserved.

Highly Emissive Whole Rainbow Fluorophores Consisting of 1,4-Bis(2-phenylethynyl)benzene Core Skeleton: Design, Synthesis, and Light-Emitting Characteristics.

PubMed

Yamaguchi, Yoshihiro; Ochi, Takanori; Matsubara, Yoshio; Yoshida, Zen-ichi

2015-08-13

To create the whole-rainbow-fluorophores (WRF) having the small Δλem (the difference of λem between a given fluorophore and nearest neighboring fluorophore having the same core skeleton) values (<20 nm) in full visible region (λem: 400-650 nm), the high log ε (>4.5), and the high Φf (>0.6), we investigated molecular design, synthesis, and light-emitting characteristics of the π-conjugated molecules (D/A-BPBs) consisting of 1,4-bis(phenylethynyl)benzene (BPB) modified by donor groups (OMe, SMe, NMe2, and NPh2) and an acceptor group (CN). As a result, synthesized 20 D/A-BPBs (1a-5d) were found to be the desired WRF. To get the intense red fluorophore (Φf > 0.7, λem > 610 nm), we synthesized new compounds (5e-5i) and elucidated their photophysical properties in CHCl3 solution. As a result, 5h, in which a 4-cyanophenyl group is introduced to the para-position of two benzene rings in the terminal NPh2 group of 5d, was found to be the desired intense red fluorophore (log ε = 4.56, Φf = 0.76, λem = 611 nm). The intramolecular charge-transfer nature of the S1 state of WRF (1a-5d) was elucidated by the positive linear relationship between optical transition energy (νem) from the S1 state to the S0 state and HOMO(D)-LUMO(A) difference, and the molecular orbitals calculated with the DFT method. It is demonstrated that our concept (Φf = 1/(exp(-Aπ) + 1)) connected with the relationship between Φf and magnitude (Aπ) of π conjugation length in the S1 state can be applied to WRF (1a-5d). It is suggested that the prediction of Φf from a structural model can be achieved by the equation Φf = 1/(exp(-((ν̃a - ν̃f)(1/2) × a(3/2)) + 1), where ν̃a and ν̃f are the wavenumber (cm(-1)) of absorption and fluorescence peaks, respectively, and a is the calculated molecular radius. From the viewpoint of application of WRF to various functional materials, the light-emitting characteristics of 1a-5i in doped polymer films were examined. It was demonstrated that 1a-5i dispersed in two kinds of polymer film (PST and PMMA) emit light at the whole visible region and have the small Δλem values (<20 nm) and the high Φf values (>0.6). Therefore, the present D/A-BPBs can be said to be the desired WRF even in the doped polymer film.

Supplemental blue LED lighting array to improve the signal quality in hyperspectral imaging of plants.

PubMed

Mahlein, Anne-Katrin; Hammersley, Simon; Oerke, Erich-Christian; Dehne, Heinz-Wilhelm; Goldbach, Heiner; Grieve, Bruce

2015-06-01

Hyperspectral imaging systems used in plant science or agriculture often have suboptimal signal-to-noise ratio in the blue region (400-500 nm) of the electromagnetic spectrum. Typically there are two principal reasons for this effect, the low sensitivity of the imaging sensor and the low amount of light available from the illuminating source. In plant science, the blue region contains relevant information about the physiology and the health status of a plant. We report on the improvement in sensitivity of a hyperspectral imaging system in the blue region of the spectrum by using supplemental illumination provided by an array of high brightness light emitting diodes (LEDs) with an emission peak at 470 nm.

White light emitting diode based on InGaN chip with core/shell quantum dots

NASA Astrophysics Data System (ADS)

Shen, Changyu; Hong, Yan; Ma, Jiandong; Ming, Jiangzhou

2009-08-01

Quantum dots have many applications in optoelectronic device such as LEDs for its many superior properties resulting from the three-dimensional confinement effect of its carrier. In this paper, single chip white light-emitting diodes (WLEDs) were fabricated by combining blue InGaN chip with luminescent colloidal quantum dots (QDs). Two kinds of QDs of core/shell CdSe /ZnS and core/shell/shell CdSe /ZnS /CdS nanocrystals were synthesized by thermal deposition using cadmium oxide and selenium as precursors in a hot lauric acid and hexadecylamine trioctylphosphine oxide hybrid. This two kinds of QDs exhibited high photoluminescence efficiency with a quantum yield more than 41%, and size-tunable emission wavelengths from 500 to 620 nm. The QDs LED mainly consists of flip luminescent InGaN chip, glass ceramic protective coating, glisten cup, QDs using as the photoluminescence material, pyroceram, gold line, electric layer, dielectric layer, silicon gel and bottom layer for welding. The WLEDs had the CIE coordinates of (0.319, 0.32). The InGaN chip white-light-emitting diodes with quantum dots as the emitting layer are potentially useful in illumination and display applications.

Effect of LED light spectra on starvation-induced oxidative stress in the cinnamon clownfish Amphiprion melanopus.

PubMed

Choi, Cheol Young; Shin, Hyun Suk; Choi, Young Jae; Kim, Na Na; Lee, Jehee; Kil, Gyung-Suk

2012-11-01

The present study aimed to test starvation-induced oxidative stress in the cinnamon clownfish Amphiprion melanopus illuminated by light-emitting diodes (LEDs): red (peak at 630 nm), green (peak at 530 nm), and blue (peak at 450 nm) within a visible light. We investigated the oxidative stress induced by starvation for 12 days during illumination with 3 LED light spectra through measuring antioxidant enzyme (superoxide dismutase [SOD] and catalase [CAT]) mRNA expression and activity; CAT western blotting; and measuring lipid peroxidation [LPO]), plasma H(2)O(2), lysozyme, glucose, alanine aminotransferase (AlaAT), aspartate aminotransferase (AspAT), and melatonin levels. In green and blue lights, expression and activity of antioxidant enzyme mRNA were significantly lower than those of other light spectra, results that are in agreement with CAT protein expression level by western blot analysis. Also, in green and blue lights, plasma H(2)O(2), lysozyme, glucose, AlaAT, AspAT, and melatonin levels were significantly lower than those in other light spectra. These results indicate that green and blue LEDs inhibit oxidative stress and enhance immune function in starved cinnamon clownfish. Copyright © 2012 Elsevier Inc. All rights reserved.

Distributed Bragg reflector tapered diode lasers emitting more than 10 W at 1154 nm

NASA Astrophysics Data System (ADS)

Feise, D.; Bugge, F.; Matalla, M.; Thies, A.; Ressel, P.; Blume, G.; Hofmann, J.; Paschke, K.

2018-02-01

Distributed Bragg reflector tapered diode lasers (DBR-TPL) emitting at 1154 nm are ideal light sources to be implemented into medical devices and hand-held tools for treatment in dermatology and ophthalmology at 577 nm due to their high spectral radiance enabling second harmonic generation from near infrared to yellow. In this work, we present DBR-TPLs which are able to emit more than 10 W in continuous-wave operation with a narrow spectral emission at 1154 nm and a very good beam quality providing excellent spectral radiance. The investigated DBRTPLs are based on three different epitaxial structures with varying vertical far field angles of 35°, 26°, and 17°. To optimize the coupling efficiency into non-linear crystals we studied DBR-TPL with a vertical far field angle of approx. 17° based on an asymmetrical super large optical cavity epitaxial structure. At a pump current of 18 A these devices are able to emit more than 9 W at 25°C and nearly 11 W at 10°C. The spectral emission is very narrow (ΔλFWHM = 18 pm) and single mode over the entire current range. While the beam quality factor M2 according to the 1/e2-level remains 1.1, the M2 according to second order moments deteriorates when the laser is pumped with higher currents. Therefore, the power content in the central lobe increases somewhat less rapidly than the total power.

Diode laser-induced tissue effects: in vitro tissue model study and in vivo evaluation of wound healing following non-contact application.

PubMed

Havel, Miriam; Betz, Christian S; Leunig, Andreas; Sroka, Ronald

2014-08-01

The basic difference between the various common medical laser systems is the wavelength of the emitted light, leading to altered light-tissue interactions due to the optical parameters of the tissue. This study examines laser induced tissue effects in an in vitro tissue model using 1,470 nm diode laser compared to our standard practice for endonasal applications (940 nm diode laser) under standardised and reproducible conditions. Additionally, in vivo induced tissue effects following non-contact application with focus on mucosal healing were investigated in a controlled intra-individual design in patients treated for hypertrophy of nasal turbinate. A certified diode laser system emitting the light of λ = 1470 nm was evaluated with regards to its tissue effects (ablation, coagulation) in an in vitro setup on porcine liver and turkey muscle tissue model. To achieve comparable macroscopic tissue effects the laser fibres (600 µm core diameter) were fixed to a computer controlled stepper motor and the laser light was applied in a reproducible procedure under constant conditions. For the in vivo evaluation, 20 patients with nasal obstruction due to hyperplasia of inferior nasal turbinates were included in this prospective randomised double-blinded comparative trial. The endoscopic controlled endonasal application of λ = 1470 nm on the one and λ = 940 nm on the other side, both in 'non-contact' mode, was carried out as an outpatient procedure under local anaesthesia. The postoperative wound healing process (mucosal swelling, scab formation, bleeding, infection) was endoscopically documented and assessed by an independent physician. In the experimental setup, the 1,470 nm laser diode system proved to be efficient in inducing tissue effects in non-contact mode with a reduced energy factor of 5-10 for highly perfused liver tissue to 10-20 for muscle tissue as compared to the 940 nm diode laser system. In the in vivo evaluation scab formation following laser surgery as assessed clinically on endonasal endoscopy was significantly reduced on 1,470 nm treated site compared to 940 nm diode laser treated site. Diode laser system (1,470 nm) induces efficient tissue effects compared to 940 nm diode laser system as shown in the tissue model experiment. From the clinical point of view, the healing process following non-contact diode laser application revealed to be improved using 1,470 nm diode laser compared to our standard diode laser practise with 940 nm. © 2014 Wiley Periodicals, Inc.

Characterization of emitted light from travelling Gunn domains in Al0.08Ga0.92As alloy based Gunn devices

NASA Astrophysics Data System (ADS)

Cetinkaya, Caglar; Mutlu, Selman; Donmez, Omer; Erol, Ayse

2017-11-01

We report room temperature operation of light emitters based on Al0.08Ga0.92As Gunn devices fabricated in a simple bar geometry with wedged-shaped electrodes. High-speed I-V measurements reveal that, at the threshold of negative differential resistance region at around 3.8 kV/cm, current instabilities, i.e., Gunn oscillations, are created with a 3.8 ns period. Both edge and surface light emission are observed when the device is biased at an electric field of onset of the negative differential resistance (NDR) region at around 3.8 kV/cm and the intensity of the light exponentially increases at applied fields just above NDR threshold likewise in a conventional laser. The origin of the light emission, which has peak wavelength is around 816 nm corresponds to the band-gap energy of Al0.08Ga0.92As, is recombination of electrons and holes generated by impact ionisation process in travelling space charge domains, i.e., Gunn domains. We demonstrate that, with increasing applied field, the amplitude of Gunn domains increases which is a result of the enhanced generation of electrons and holes via impact ionisation. The intensity of the emitted light is observed to be dependent on applied electric field. At low electric fields, light intensity increases linearly then, when applied electric field reaches the onset of NDR region, increases exponentially. Besides, as applied field is increased, full width at half maximum (FWHM) of emitted light decreases to 56.5 nm from 62 nm, evolving into higher selective emission line in wavelength. The light emission from the device is determined to be independent of the polarity of the applied voltage. A comparison of surface emission and edge emission characteristics of the waveguided device are different from each other. Edge emission has higher electroluminescence intensity and better spectral purity than surface emission with well-defined longitudinal modes of Fabry-Pérot cavity, which indicates that, in such a device, lasing action arises from the recombination of excess carriers generated via impact ionisation in travelling Gunn domains. Besides, the edge emission peak of waveguided Al0.08Ga0.92As Gunn device at 4.1 kV/cm is split into two peaks with FWHM of 8 and 6 nm as well as neighbouring sharper minor peaks due to stimulated emission dominates by building-up photons in the cavity. Our results reveal that the proposed Gunn device can be a promising alternative to conventional diode lasers with its simpler design, only one type doped active region and voltage polarity-independent operation, but the duty cycle has to be chosen small enough to make the device operate at room temperature.

A New Proof of Concept in Bacterial Reduction: Antimicrobial Action of Violet-Blue Light (405 nm) in Ex Vivo Stored Plasma

PubMed Central

Maclean, Michelle; Anderson, John G.; MacGregor, Scott J.; White, Tracy

2016-01-01

Bacterial contamination of injectable stored biological fluids such as blood plasma and platelet concentrates preserved in plasma at room temperature is a major health risk. Current pathogen reduction technologies (PRT) rely on the use of chemicals and/or ultraviolet light, which affects product quality and can be associated with adverse events in recipients. 405 nm violet-blue light is antibacterial without the use of photosensitizers and can be applied at levels safe for human exposure, making it of potential interest for decontamination of biological fluids such as plasma. As a pilot study to test whether 405 nm light is capable of inactivating bacteria in biological fluids, rabbit plasma and human plasma were seeded with bacteria and treated with a 405 nm light emitting diode (LED) exposure system (patent pending). Inactivation was achieved in all tested samples, ranging from low volumes to prebagged plasma. 99.9% reduction of low density bacterial populations (≤103 CFU mL−1), selected to represent typical “natural” contamination levels, was achieved using doses of 144 Jcm−2. The penetrability of 405 nm light, permitting decontamination of prebagged plasma, and the nonrequirement for photosensitizing agents provide a new proof of concept in bacterial reduction in biological fluids, especially injectable fluids relevant to transfusion medicine. PMID:27774337

Broadband Optical Active Waveguides Written by Femtosecond Laser Pulses in Lithium Fluoride

NASA Astrophysics Data System (ADS)

Ismael, Chiamenti; Francesca, Bonfigli; Anderson, S. L. Gomes; Rosa, Maria Montereali; Larissa, N. da Costa; Hypolito, J. Kalinowski

2014-01-01

Broadband waveguiding through light-emitting strips directly written in a blank lithium fluoride crystal with a femtosecond laser is reported. Light guiding was observed at several optical wavelengths, from blue, 458 nm, to near-infrared, at 1550 nm. Visible photoluminescence spectra of the optically active F2 and F3+ color centers produced by the fs laser writing process were measured. The wavelength-dependent refractive index increase was estimated to be in the order of 10-3-10-4 in the visible and near-infrared spectral intervals, which is consistent with the stable formation of point defects in LiF.

Deep blue exciplex organic light-emitting diodes with enhanced efficiency; P-type or E-type triplet conversion to singlet excitons?

PubMed

Jankus, Vygintas; Chiang, Chien-Jung; Dias, Fernando; Monkman, Andrew P

2013-03-13

Simple trilayer, deep blue, fluorescent exciplex organic light-emitting diodes (OLEDs) are reported. These OLEDs emit from an exciplex state formed between the highest occupied molecular orbital (HOMO) of N,N'-bis(1-naphthyl)N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) and lowest unoccupied molecular orbital (LUMO) of 1,3,5-tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl (TPBi) and the NPB singlet manifold, yielding 2.7% external quantum efficiency at 450 nm. It is shown that the majority of the delayed emission in electroluminescence arises from P-type triplet fusion at NPB sites not E-type reverse intersystem crossing because of the presence of the NPB triplet state acting as a deep trap. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency.

PubMed

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-24

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-01

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

Synthesis of Carbon Dots with Multiple Color Emission by Controlled Graphitization and Surface Functionalization.

PubMed

Miao, Xiang; Qu, Dan; Yang, Dongxue; Nie, Bing; Zhao, Yikang; Fan, Hongyou; Sun, Zaicheng

2018-01-01

Multiple-color-emissive carbon dots (CDots) have potential applications in various fields such as bioimaging, light-emitting devices, and photocatalysis. The majority of the current CDots to date exhibit excitation-wavelength-dependent emissions with their maximum emission limited at the blue-light region. Here, a synthesis of multiple-color-emission CDots by controlled graphitization and surface function is reported. The CDots are synthesized through controlled thermal pyrolysis of citric acid and urea. By regulating the thermal-pyrolysis temperature and ratio of reactants, the maximum emission of the resulting CDots gradually shifts from blue to red light, covering the entire light spectrum. Specifically, the emission position of the CDots can be tuned from 430 to 630 nm through controlling the extent of graphitization and the amount of surface functional groups, COOH. The relative photoluminescence quantum yields of the CDots with blue, green, and red emission reach up to 52.6%, 35.1%, and 12.9%, respectively. Furthermore, it is demonstrated that the CDots can be uniformly dispersed into epoxy resins and be fabricated as transparent CDots/epoxy composites for multiple-color- and white-light-emitting devices. This research opens a door for developing low-cost CDots as alternative phosphors for light-emitting devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Interpretation of the fluorescence signatures from vegetation

NASA Astrophysics Data System (ADS)

Buschmann, C.

Vegetation emits fluorescence as part of the energy taken up by absorption %of solar radiation from UV to the visible. This fluorescence consists of light with low intensity (only few percents of the reflected light) emitted from the leaves. The fluorescence emission of a green leaf is characterized by four bands with maxima in the blue (440 nm), green (520 nm), red (690 nm) and far red (740 nm) spectral region. The intensity of fluorescence in the maxima of the emission spectrum varies depending on the following six basic parameters which must be taken into account for the interpretation of fluorescence signatures from vegetation: (a) content of the fluorophores (ferulic acid, chlorophyll a), (b) temperature of the leaf, (c) penetration of excitation light into the leaf, (d) emission of fluorescence from the leaf (re-absorption inside the leaf tissue), (e) photosynthetic activity of the leaf, (f) non-radiative decay (heat production) parallel to the fluorescence The ratios between the intensities of the maxima (F440/F690, F440/F520, F690/F740) are used as characteristic fluorescence parameter. The wide range of changes of these ratios caused by differences in the leaf tissue (aerial interspaces, variegated/homogeneous green leaves), various types of stress (UV, photoinhibition, sun exposure, heat, water deficiency, N-deficiency) and chemicals (inhibitors, fertilizers) can be explained by changes of the six basic parameters. It will be shown that the interpretation of the fluorescence signatures, in most cases, must be based on a complex consideration of more than one of the basic parameters.

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

PubMed

Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki

2006-05-18

Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond and III-V nitride semiconductors (GaN, AlGaN and AlN; refs 3-10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

Numerical Analysis of the Temperature Impact on Performance of GaN-Based 460-nm Light-Emitting Diode.

PubMed

Tawfik, Wael Z; Lee, June Key

2018-03-01

The influence of temperature on the characteristics of a GaN-based 460-nm light-emitting diode (LED) prepared on sapphire substrate was simulated using the SiLENSe and SpeCLED software programs. High temperatures impose negative effects on the performance of GaN-based LEDs. As the temperature increases, electrons acquire higher thermal energies, and therefore LEDs may suffer more from high-current loss mechanisms, which in turn causes a reduction in the radiative recombination rate in the active region. The internal quantum efficiency was reduced by about 24% at a current density of 35 A/cm2, and the electroluminescence spectral peak wavelength was redshifted. The LED operated at 260 K and exhibited its highest light output power of ~317.5 mW at a maximum injection current of 350 mA, compared to 212.2 mW for an LED operated at 400 K. However, increasing temperature does not cause a droop in efficiency under high injection conditions. The peak efficiency at 1 mA of injection current decreases more rapidly by ~15% with increasing temperature from 260 to 400 K than the efficiency at high injection current of 350 mA by ~11%.

Towards microalbuminuria determination on a disposable diagnostic microchip with integrated fluorescence detection based on thin-film organic light emitting diodes.

PubMed

Hofmann, Oliver; Wang, Xuhua; Demello, John C; Bradley, Donal D C; Demello, Andrew J

2005-08-01

As a first step towards a fully disposable stand-alone diagnostic microchip for determination of urinary human serum albumin (HSA), we report the use of a thin-film organic light emitting diode (OLED) as an excitation source for microscale fluorescence detection. The OLED has a peak emission wavelength of 540 nm, is simple to fabricate on flexible or rigid substrates, and operates at drive voltages below 10 V. In a fluorescence assay, HSA is reacted with Albumin Blue 580, generating a strong emission at 620 nm when excited with the OLED. Filter-less discrimination between excitation light and generated fluorescence is achieved through an orthogonal detection geometry. When the assay is performed in 800 microm deep and 800 microm wide microchannels on a poly(dimethylsiloxane)(PDMS) microchip at flow rates of 20 microL min(-1), HSA concentrations down to 10 mg L(-1) can be detected with a linear range from 10 to 100 mg L(-1). This sensitivity is sufficient for the determination of microalbuminuria (MAU), an increased urinary albumin excretion indicative of renal disease (clinical cut-off levels: 15-40 mg L(-1)).

Light-emitting properties of cationic iridium complexes containing phenanthroline based ancillary ligand with blue-green and green emission colors

NASA Astrophysics Data System (ADS)

Kwon, Yiseul; Sunesh, Chozhidakath Damodharan; Choe, Youngson

2015-01-01

We report here two new cationic iridium(III) complexes with phenanthroline-based ancillary ligands, [Ir(dfppy)2(dibutyl-phen)]PF6 (Complex 1) and [Ir(ppz)2(dibutyl-phen)]PF6 (Complex 2) and their uses in light-emitting electrochemical cells (LECs). The design is based on 2-(2,4-difluorophenyl)pyridine (dfppy) and 1-phenylpyrazole (ppz) as the cyclometalating ligands and 2,9-dibutyl-1,10-phenanthroline (dibutyl-phen) as the ancillary ligand. The photophysical and electrochemical properties of the complexes were studied and the results obtained were corroborated with theoretical density functional theory (DFT) calculations. LECs were fabricated incorporating each complexes which resulted in blue-green light emission (502 nm) with Commission Internationale de l'Eclairage (CIE) coordinates of (0.26, 0.49) for Complex 1 and green (530 nm) electroluminescence with CIE coordinates of (0.33, 0.54) for Complex 2. The luminance and the current efficiency of the LECs based on Complex 1 are 947 cd m-2 and 0.25 cd A-1, respectively, which are relatively higher than that of Complex 2 with a maximum luminance of 773 cd m-2 and an efficiency of 0.16 cd A-1.

Optoelectronic pH Meter: Further Details

NASA Technical Reports Server (NTRS)

Jeevarajan, Antony S.; Anderson, Mejody M.; Macatangay, Ariel V.

2009-01-01

A collection of documents provides further detailed information about an optoelectronic instrument that measures the pH of an aqueous cell-culture medium to within 0.1 unit in the range from 6.5 to 7.5. The instrument at an earlier stage of development was reported in Optoelectronic Instrument Monitors pH in a Culture Medium (MSC-23107), NASA Tech Briefs, Vol. 28, No. 9 (September 2004), page 4a. To recapitulate: The instrument includes a quartz cuvette through which the medium flows as it is circulated through a bioreactor. The medium contains some phenol red, which is an organic pH-indicator dye. The cuvette sits between a light source and a photodetector. [The light source in the earlier version comprised red (625 nm) and green (558 nm) light-emitting diodes (LEDs); the light source in the present version comprises a single green- (560 nm)-or-red (623 nm) LED.] The red and green are repeatedly flashed in alternation. The responses of the photodiode to the green and red are processed electronically to obtain the ratio between the amounts of green and red light transmitted through the medium. The optical absorbance of the phenol red in the green light varies as a known function of pH. Hence, the pH of the medium can be calculated from the aforesaid ratio.

Next generation smart window display using transparent organic display and light blocking screen.

PubMed

Kim, Gyeong Woo; Lampande, Raju; Choe, Dong Cheol; Ko, Ik Jang; Park, Jin Hwan; Pode, Ramchandra; Kwon, Jang Hyuk

2018-04-02

Transparent organic light emitting diodes (TOLED) have widespread applications in the next-generation display devices particularly in the large size transparent window and interactive displays. Herein, we report high performance and stable attractive smart window displays using facile process. Advanced smart window display is realized by integrating the high performance light blocking screen and highly transparent white OLED panel. The full smart window display reveals a maximum transmittance as high as 64.2% at the wavelength of 600 nm and extremely good along with tunable ambient contrast ratio (171.94:1) compared to that of normal TOLED (4.54:1). Furthermore, the performance decisive light blocking screen has demonstrated an excellent optical and electrical characteristics such as i) high transmittance (85.56% at 562nm) at light-penetrating state, ii) superior absorbance (2.30 at 562nm) in light interrupting mode, iii) high optical contrast (85.50 at 562 nm), iv) high optical stability for more than 25,000 cycle of driving, v) fast switching time of 1.9 sec, and vi) low driving voltage of 1.7 V. The experimental results of smart window display are also validated using optical simulation. The proposed smart window display technology allows us to adjust the intensity of daylight entering the system quickly and conveniently.

Which way is up? Asymmetric spectral input along the dorsal-ventral axis influences postural responses in an amphibious annelid.

PubMed

Jellies, John

2014-11-01

Medicinal leeches are predatory annelids that exhibit countershading and reside in aquatic environments where light levels might be variable. They also leave the water and must contend with terrestrial environments. Yet, leeches generally maintain a dorsal upward position despite lacking statocysts. Leeches respond visually to both green and near-ultraviolet (UV) light. I used LEDs to test the hypothesis that ventral, but not dorsal UV would evoke compensatory movements to orient the body. Untethered leeches were tested using LEDs emitting at red (632 nm), green (513 nm), blue (455 nm) and UV (372 nm). UV light evoked responses in 100 % of trials and the leeches often rotated the ventral surface away from it. Visible light evoked no or modest responses (12-15 % of trials) and no body rotation. Electrophysiological recordings showed that ventral sensilla responded best to UV, dorsal sensilla to green. Additionally, a higher order interneuron that is engaged in a variety of parallel networks responded vigorously to UV presented ventrally, and both the visible and UV responses exhibited pronounced light adaptation. These results strongly support the suggestion that a dorsal light reflex in the leech uses spectral comparisons across the dorsal-ventral axis rather than, or in addition to, luminance.

Photoluminescence Properties of Red-Emitting Ca3Sr3-x(PO4)4:xEu3+ Phosphors for White Light-Emitting Diodes.

PubMed

Hakeem, D A; Park, K

2015-07-01

The photoluminescent properties of the Eu(3+)-activated Ca3Sr3(PO4)4 phosphors prepared by a solution combustion method were investigated. The excitation spectra of Ca3Sr3-x(PO4)4:xEu3+ (0.05 ≤ x ≤ 0.6) phosphors under 614 nm wavelength showed a broad band centered at 266 nm along with other peaks at 320, 362, 381, 394, 414, 464, and 534 nm. The emission spectra observed in the range of 450 to 750 nm under excitation at 394 nm were ascribed to the 5D0-7F1-4 transitions of Eu3+ ions. The Ca3Sr3-x(PO4)4:xEu3+ phosphors showed the strongest red emission at 614 nm due to the electric dipole 5DO -->7F2 transition of Eu3+. The strongest emission intensity was obtained for the Eu3+ ions of x = 0.5. The prepared Ca3Sr3-x(PO4)4:xEu3+ can be used as an efficient red phosphor for UV-based white LEDs.

In Situ Preparation of Metal Halide Perovskite Nanocrystal Thin Films for Improved Light-Emitting Devices.

PubMed

Zhao, Lianfeng; Yeh, Yao-Wen; Tran, Nhu L; Wu, Fan; Xiao, Zhengguo; Kerner, Ross A; Lin, YunHui L; Scholes, Gregory D; Yao, Nan; Rand, Barry P

2017-04-25

Hybrid organic-inorganic halide perovskite semiconductors are attractive candidates for optoelectronic applications, such as photovoltaics, light-emitting diodes, and lasers. Perovskite nanocrystals are of particular interest, where electrons and holes can be confined spatially, promoting radiative recombination. However, nanocrystalline films based on traditional colloidal nanocrystal synthesis strategies suffer from the use of long insulating ligands, low colloidal nanocrystal concentration, and significant aggregation during film formation. Here, we demonstrate a facile method for preparing perovskite nanocrystal films in situ and that the electroluminescence of light-emitting devices can be enhanced up to 40-fold through this nanocrystal film formation strategy. Briefly, the method involves the use of bulky organoammonium halides as additives to confine crystal growth of perovskites during film formation, achieving CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3 perovskite nanocrystals with an average crystal size of 5.4 ± 0.8 nm and 6.4 ± 1.3 nm, respectively, as confirmed through transmission electron microscopy measurements. Additive-confined perovskite nanocrystals show significantly improved photoluminescence quantum yield and decay lifetime. Finally, we demonstrate highly efficient CH 3 NH 3 PbI 3 red/near-infrared LEDs and CH 3 NH 3 PbBr 3 green LEDs based on this strategy, achieving an external quantum efficiency of 7.9% and 7.0%, respectively, which represent a 40-fold and 23-fold improvement over control devices fabricated without the additives.

Light-emitting Si nanostructures formed by swift heavy ions in a-Si:H/SiO2 multilayer heterostructures

NASA Astrophysics Data System (ADS)

Cherkova, S. G.; Volodin, V. A.; Cherkov, A. G.; Antonenko, A. Kh; Kamaev, G. N.; Skuratov, V. A.

2017-08-01

Light-emitting nanoclusters were formed in Si/SiO2 multilayer structures irradiated with 167 MeV Xe ions to the doses of 1011-3  ×  1014 cm-2 and annealed in the forming-gas at 500 °C and in nitrogen at 800-1100 °C, 30 min. The thicknesses were ~4 nm or ~7-8 for the Si, and ~10 nm for the SiO2 layers. The structures were studied using photoluminescence (PL), Raman spectroscopy, and the cross-sectional high resolution transmission electron microscopy (HRTEM). As-irradiated samples showed the PL, correlating with the growth of the ion doses. HRTEM found the layers to be partly disintegrated. The thickness of the amorphous Si layer was crucial. For 4 nm thick Si layers the PL was peaking at ~490 nm, and quenched by the annealing. It was ascribed to the structural imperfections. For the thicker Si layers the PL was peaking at ~600 nm and was attributed to the Si-rich nanoclusters in silicon oxide. The annealing increases the PL intensity and shifts the band to ~790 nm, typical of Si nanocrystals. Its intensity was proportional to the dose. Raman spectra confirmed the nanocrystals formation. All the results obtained evidence the material melting in the tracks for 10-11-10-10 s providing thereby fast diffusivities of the atoms. The thicker Si layers provide more excess Si to create the nanoclusters via a molten state diffusion.

High-performance planar green light-emitting diodes based on a PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structure

NASA Astrophysics Data System (ADS)

Shi, Zhi-Feng; Sun, Xu-Guang; Wu, Di; Xu, Ting-Ting; Zhuang, Shi-Wei; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

2016-05-01

Recently, perovskite-based light-emitting diodes based on organometal halide emitters have attracted much attention because of their excellent properties of high color purity, tunable emission wavelength and a low-temperature processing technique. As is well-known, organic light-emitting diodes have shown powerful capabilities in this field; however, the fabrication of these devices typically relies on high-temperature and high-vacuum processes, which increases the final cost of the product and renders them uneconomical for use in large-area displays. Organic/inorganic hybrid halide perovskites match with these material requirements, as it is possible to prepare such materials with high crystallinity through solution processing at low temperature. Herein, we demonstrated a high-brightness green light-emitting diode based on PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structures by a spin-coating method combined with a sputtering system. Under forward bias, a dominant emission peak at ~530 nm with a low full width of half-maximum (FWHM) of 30 nm can be achieved at room temperature. Owing to the high surface coverage of the CH3NH3PbBr3 layer and a device design based on carrier injection and a confinement configuration, the proposed diode exhibits good electroluminescence performance, with an external quantum efficiency of 0.0645%. More importantly, we investigated the working stability of the studied diode under continuous operation to verify the sensitivity of the electroluminescence performance to ambient atmosphere and to assess the suitability of the diode for practical applications. Moreover, the underlying reasons for the undesirable emission decay are tentatively discussed. This demonstration of an effective green electroluminescence based on CH3NH3PbBr3 provides valuable information for the design and development of perovskites as efficient emitters, thus facilitating their use in existing applications and suggesting new potential applications.

A study on a portable fluorescence imaging system

NASA Astrophysics Data System (ADS)

Chang, Han-Chao; Wu, Wen-Hong; Chang, Chun-Li; Huang, Kuo-Cheng; Chang, Chung-Hsing; Chiu, Shang-Chen

2011-09-01

The fluorescent reaction is that an organism or dye, excited by UV light (200-405 nm), emits a specific frequency of light; the light is usually a visible or near infrared light (405-900 nm). During the UV light irradiation, the photosensitive agent will be induced to start the photochemical reaction. In addition, the fluorescence image can be used for fluorescence diagnosis and then photodynamic therapy can be given to dental diseases and skin cancer, which has become a useful tool to provide scientific evidence in many biomedical researches. However, most of the methods on acquiring fluorescence biology traces are still stay in primitive stage, catching by naked eyes and researcher's subjective judgment. This article presents a portable camera to obtain the fluorescence image and to make up a deficit from observer competence and subjective judgment. Furthermore, the portable camera offers the 375nm UV-LED exciting light source for user to record fluorescence image and makes the recorded image become persuasive scientific evidence. In addition, when the raising the rate between signal and noise, the signal processing module will not only amplify the fluorescence signal up to 70 %, but also decrease the noise significantly from environmental light on bill and nude mouse testing.

Multispectral diagnostic imaging of the iris in pigment dispersion syndrome.

PubMed

Roberts, Daniel K; Lukic, Ana; Yang, Yongyi; Wilensky, Jacob T; Wernick, Miles N

2012-08-01

To determine if wavelength selection with near infrared iris imaging may enhance iris transillumination defects (ITDs) in pigment dispersion syndrome. An experimental apparatus was used to acquire iris images in 6 African-American (AA) and 6 White patients with pigment dispersion syndrome. Light-emitting diode probes of 6 different spectral bands (700 to 950 nm) were used to project light into patients' eyes. Iris patterns were photographed, ITD regions of interest were outlined, and region of interest contrasts were calculated for each spectral band. Contrasts varied as a function of wavelength (P<0.0001) for both groups, but tended to be highest in the 700 to 800 nm range. Contrasts were higher in Whites than AAs at 700 nm but the opposite was found at 810 nm (P<0.001). Optimized near infrared iris imaging may be wavelength dependent. Ideal wavelength to image ITDs in more pigmented eyes may be slightly longer than for less pigmented eyes.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soni, Abhishek Kumar; Rai, Vineet Kumar, E-mail: vineetkrrai@yahoo.co.in

Erbium ion (Er{sup 3+}) doped BaMoO{sub 4} phosphor has been synthesized via co-precipitation technique. Phase formation of the prepared phosphor has been recognized by powder X-ray diffraction analysis. The photoluminescence emission spectrum has been recorded in 400-800nm wavelength range under 380nm excitation. The observed photoluminescence peaks are explained with the help of energy level structure. The prepared phosphor seems capable to produce efficient blue colour emission which can be useful for making blue light emitting diodes (LEDs).

A novel red phosphor Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} for near UV white light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhigang; Zhao, Zhengyan; Shi, Yurong

2013-10-15

Graphical abstract: - Highlights: • Novel red phosphor Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} was prepared by solid-state reaction. • Excitation spectra suggested an obvious absorption in near-ultraviolet region. • Under 392 nm excitation, the phosphors exhibited a red emission at 614 nm. • Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} could be potentially applied in near UV white LEDs. - Abstract: A novel red phosphor Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} was synthesized using a solid-state reaction method, and its luminescence characteristics and charge compensators effect (Li{sup +}, Na{sup +}, K{sup +}) were investigated. The excitation spectra showed a obviousmore » absorption in near-ultraviolet region. Under 392 nm excitation, the phosphors exhibited an intense red emission at 614 nm. The Commission Internationale de l’Eclairage (CIE) chromaticity coordinates and quantum efficiency (QE) were (0.65, 0.35) and 62.3%, respectively. The good color saturation, high quantum efficiency and small thermal-quenching properties indicate that Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} could be potentially applied in near UV white light-emitting diodes.« less

Photoluminescence and thermal stability of yellow-emitting Na{sub 2}Ba{sub 2}Si{sub 2}O{sub 7}:Sm{sup 3+} phosphor for light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Jiayue, E-mail: jiayue_sun@126.com; Di, Qiumei; Cui, Dianpeng

2014-12-15

Highlights: • Na{sub 2}Ba{sub 2}Si{sub 2}O{sub 7}:Sm{sup 3+} phosphors are obtained via a solid-state reaction method. • Excitation at 402 nm, the yellow color purity is close to 100%. • The mechanism of concentration quenching is dipole–dipole interaction. • The temperature-dependent luminescence property exceed that of YAG:Ce{sup 3+}. - Abstract: A series of yellow-emitting Na{sub 2}(Ba{sub 2−x}Sm{sub x})Si{sub 2}O{sub 7} phosphors have been prepared via solid-state reaction technique. X-ray diffraction (XRD), photoluminescence (PL) spectra, temperature-dependent luminescence property, concentration quenching mechanism and luminescence lifetime are applied to characterize the obtained samples. Under 402 nm near ultraviolent excitation, the samples emit yellowmore » light and the color purity is close to 100%. The critical quenching concentration of Sm{sup 3+} in the Na{sub 2}Ba{sub 2}Si{sub 2}O{sub 7} host is about 3.6 mol% and corresponding quenching behavior is ascribed to be electric dipole–dipole interaction. Furthermore, the phosphor has good thermal stability property, superior to the commercial yellow Y{sub 3}Al{sub 5}O{sub 12}:Ce{sup 3+} phosphor and the activation energy for thermal quenching is calculated as 0.18 eV.« less

Organic light-emitting diodes using novel embedded al gird transparent electrodes

NASA Astrophysics Data System (ADS)

Peng, Cuiyun; Chen, Changbo; Guo, Kunping; Tian, Zhenghao; Zhu, Wenqing; Xu, Tao; Wei, Bin

2017-03-01

This work demonstrates a novel transparent electrode using embedded Al grids fabricated by a simple and cost-effective approach using photolithography and wet etching. The optical and electrical properties of Al grids versus grid geometry have been systematically investigated, it was found that Al grids exhibited a low sheet resistance of 70 Ω □-1 and a light transmission of 69% at 550 nm with advantages in terms of processing conditions and material cost as well as potential to large scale fabrication. Indium Tin Oxide-free green organic light-emitting diodes (OLED) based on Al grids transparent electrodes was demonstrated, yielding a power efficiency >15 lm W-1 and current efficiency >39 cd A-1 at a brightness of 2396 cd m-2. Furthermore, a reduced efficiency roll-off and higher brightness have been achieved compared with ITO-base device.

A blue optical filter for narrow-band imaging in endoscopic capsules

NASA Astrophysics Data System (ADS)

Silva, M. F.; Ghaderi, M.; Goncalves, L. M.; de Graaf, G.; Wolffenbuttel, R. F.; Correia, J. H.

2014-05-01

This paper presents the design, simulation, fabrication, and characterization of a thin-film Fabry-Perot resonator composed of titanium dioxide (TiO2) and silicon dioxide (SiO2) thin-films. The optical filter is developed to be integrated with a light emitting diode (LED) for enabling narrow-band imaging (NBI) in endoscopy. The NBI is a high resolution imaging technique that uses spectrally centered blue light (415 nm) and green light (540 nm) to illuminate the target tissue. The light at 415 nm enhances the imaging of superficial veins due to their hemoglobin absorption, while the light at 540 nm penetrates deeper into the mucosa, thus enhances the sub-epithelial vessels imaging. Typically the endoscopes and endoscopic capsules use white light for acquiring images of the gastrointestinal (GI) tract. However, implementing the NBI technique in endoscopic capsules enhances their capabilities for the clinical applications. A commercially available blue LED with a maximum peak intensity at 404 nm and Full Width Half Maximum (FWHM) of 20 nm is integrated with a narrow band blue filter as the NBI light source. The thin film simulations show a maximum spectral transmittance of 36 %, that is centered at 415 nm with FWHM of 13 nm for combined the blue LED and a Fabry Perot resonator system. A custom made deposition scheme was developed for the fabrication of the blue optical filter by RF sputtering. RF powered reactive sputtering at 200 W with the gas flows of argon and oxygen that are controlled for a 5:1 ratio gives the optimum optical conditions for TiO2 thin films. For SiO2 thin films, a non-reactive RF sputtering at 150 W with argon gas flow at 15 sccm results in the best optical performance. The TiO2 and SiO2 thin films were fully characterized by an ellipsometer in the wavelength range between 250 nm to 1600 nm. Finally, the optical performance of the blue optical filter is measured and presented.

Clinical comparison between the bleaching efficacy of light-emitting diode and diode laser with sodium perborate.

PubMed

Koçak, Sibel; Koçak, Mustafa Murat; Sağlam, Baran Can

2014-04-01

The aim of this clinical study was to test the efficacy of a light-emitting diode (LED) light and a diode laser, when bleaching with sodium perborate. Thirty volunteers were selected to participate in the study. The patients were randomly divided into two groups. The initial colour of each tooth to be bleached was quantified with a spectrophotometer. In group A, sodium perborate and distilled water were mixed and placed into the pulp chamber, and the LED light was source applied. In group B, the same mixture was used, and the 810 nm diode laser was applied. The final colour of each tooth was quantified with the same spectrophotometer. Initial and final spectrophotometer values were recorded. Mann-Whitney U-test and Wicoxon tests were used to test differences between both groups. Both devices successfully whitened the teeth. No statistical difference was found between the efficacy of the LED light and the diode laser. © 2013 The Authors. Australian Endodontic Journal © 2013 Australian Society of Endodontology.

Effects of colored light-emitting diode illumination on behavior and performance of laying hens.

PubMed

Huber-Eicher, B; Suter, A; Spring-Stähli, P

2013-04-01

The best method for lighting poultry houses has been an issue for many decades, generating much interest in any new systems that become available. Poultry farmers are now increasingly using colored LED (light-emitting diodes) to illuminate hen houses (e.g., in Germany, Austria, the Netherlands, and England). In Switzerland all newly installed systems are now equipped with LED, preferably green ones. The LED give monochromatic light from different wavelengths and have several advantages over conventional illuminants, including high energy efficiency, long life, high reliability, and low maintenance costs. The following study examines the effects of illumination with white, red, and green LED on behavior and production parameters of laying hens. Light intensities in the 3 treatments were adjusted to be perceived by hens as equal. Twenty-four groups of 25 laying hens were kept in identical compartments (5.0 × 3.3 m) equipped with a litter area, raised perches, feed and drinking facilities, and nest boxes. Initially, they were kept under white LED for a 2-wk adaptation period. For the next 4 wk, 8 randomly chosen compartments were lit with red LED (640 nm) and 8 others with green LED (520 nm). Behavior was monitored during the last 2 wk of the trial. Additionally weight gain, feed consumption, onset of lay, and laying performance were recorded. The results showed minor effects of green light on explorative behavior, whereas red light reduced aggressiveness compared with white light. The accelerating effect of red light on sexual development of laying hens was confirmed, and the trial demonstrated that this effect was due to the specific wavelength and not the intensity of light. However, an additional effect of light intensity may exist and should not be excluded.

The effects of ultra-thin cerium fluoride film as the anode buffer layer on the electrical characteristics of organic light emitting diodes

NASA Astrophysics Data System (ADS)

Lu, Hsin-Wei; Tsai, Cheng-Che; Hong, Cheng-Shong; Kao, Po-Ching; Juang, Yung-Der; Chu, Sheng-Yuan

2016-11-01

In this study, the efficiency of organic light-emitting diodes (OLEDs) was enhanced by depositing a CeF3film as an ultra-thin buffer layer between the indium tin oxide (ITO) electrode and α-naphthylphenylbiphenyldiamine (NPB) hole transport layer, with the structure configuration ITO/CeF3 (0.5, 1, and 1.5 nm)/α-naphthylphenylbiphenyl diamine (NPB) (40 nm)/tris(8-hydroxyquinoline) aluminum (Alq3) (60 nm)/lithium fluoride (LiF) (1 nm)/Al (150 nm). The enhancement mechanism was systematically investigated via several approaches. The X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy results revealed the formation of the UV-ozone treated CeF3 film. The work function increased from 4.8 eV (standard ITO electrode) to 5.22 eV (0.5-nm-thick UV-ozone treated CeF3 film deposited on the ITO electrode). The surface roughness of the UV-ozone treated CeF3 film was smoother than that of the standard ITO electrode. Further, the UV-ozone treated CeF3 film increased both the surface energy and polarity, as determined from contact angle measurements. In addition, admittance spectroscopy measurements showed an increased capacitance and conductance of the OLEDs. Accordingly, the turn-on voltage decreased from 4.2 V to 3.6 V at 1 mA/cm2, the luminance increased from 7588 cd/m2 to 24760 cd/m2, and the current efficiency increased from 3.2 cd/A to 3.8 cd/A when the 0.5-nm-thick UV-ozone treated CeF3 film was inserted into the OLEDs.

Interferences of resveratrol with fura-2-derived fluorescence in intracellular free-Ca(2+) concentration determinations.

PubMed

Santofimia-Castaño, Patricia; Salido, Gines M; Gonzalez, Antonio

2016-08-01

Resveratrol (3,4',5-trihydroxy-trans-stilbene) is an antioxidant widely employed in cell physiology studies. It has been reported that it interferes with fura-2-derived fluorescence, making the employment of this dye nonviable. In this work, the interference of resveratrol with fura-2 determinations of intracellular free-Ca(2+) concentration ([Ca(2+)]c) was examined. Solutions containing different concentrations of resveratrol, with or without fura-2, in the presence or in the absence of Ca(2+), were analyzed by spectrofluorimetry. AR42J tumor cells were employed to study the influence of resveratrol on fura-2 fluorescence in living cells, by single cell fluorimetry. Resveratrol impaired the detection of fura-2-fluorescence emission (510 nm) at the 340, 360 and 380 nm excitation wavelengths. Resveratrol emitted fluorescence at 510 nm when lighted at all three excitation wavelengths. In addition, resveratrol emitted fluorescence at 380 nm when excited at 340 nm. Our observations suggest that the employment of the ratiometric properties of fura-2 to follow changes in [Ca(2+)]c in the presence of resveratrol is not viable. However, we think that the 380 nm excitation light could be employed. Results could be expressed as F0/F380, where F0 is the resting fluorescence and F380 is the value of fluoresce at a certain time point. We could follow changes in [Ca(2+)]c evoked by CCK-8, and we also detected Ca(2+) mobilization by 100 µM resveratrol in AR42J cells. This investigation presents evidence demonstrating that resveratrol interferes with fura-2 fluorescence spectra. Nevertheless, a chance still exists if the 380 nm excitation wavelength is employed in the middle or low micromolar concentrations of resveratrol.

Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures

NASA Astrophysics Data System (ADS)

Liang, Y. H.; Towe, E.

2018-03-01

Doping of high aluminum-containing (Al,Ga)N thin films has remained a challenging problem that has hindered progress in the development of deep ultraviolet light-emitters. This paper reports on the synthesis and use of heavily doped (Al,Ga)N films in deep ultraviolet (˜274 nm) light-emitting structures; these structures were synthesized by molecular beam epitaxy under liquid-metal growth conditions that facilitate the incorporation of extremely high density of Mg dopant impurities (up to 5 × 1019 cm-3) into aluminum-rich (Al,Ga)N thin films. Prototypical light-emitting diode structures incorporating Al0.7Ga0.3N films doped with Mg impurities that ionize to give free hole carrier concentrations of up to 6 × 1017 cm-3 exhibit external quantum efficiencies of up 0.56%; this is an improvement from previous devices made from molecular beam epitaxy-grown materials. This improvement is believed to be due to the high hole carrier concentration enabled by the relatively low activation energy of 220 meV compared to the expected values of 408-507 meV for Al0.7Ga0.3N films.

High-efficiency tris(8-hydroxyquinoline)aluminum (Alq3) complexes for organic white-light-emitting diodes and solid-state lighting.

PubMed

Pérez-Bolívar, César; Takizawa, Shin-ya; Nishimura, Go; Montes, Victor A; Anzenbacher, Pavel

2011-08-08

Combinations of electron-withdrawing and -donating substituents on the 8-hydroxyquinoline ligand of the tris(8-hydroxyquinoline)aluminum (Alq(3)) complexes allow for control of the HOMO and LUMO energies and the HOMO-LUMO gap responsible for emission from the complexes. Here, we present a systematic study on tuning the emission and electroluminescence (EL) from Alq(3) complexes from the green to blue region. In this study, we explored the combination of electron-donating substituents on C4 and C6. Compounds 1-6 displayed the emission tuning between 478 and 526 nm, and fluorescence quantum yield between 0.15 and 0.57. The compounds 2-6 were used as emitters and hosts in organic light-emitting diodes (OLEDs). The highest OLED external quantum efficiency (EQE) observed was 4.6%, which is among the highest observed for Alq(3) complexes. Also, the compounds 3-5 were used as hosts for red phosphorescent dopants to obtain white light-emitting diodes (WOLED). The WOLEDs displayed high efficiency (EQE up to 19%) and high white color purity (color rendering index (CRI≈85). Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Organic Light-Emitting Diodes with a Perylene Interlayer Between the Electrode-Organic Interface

NASA Astrophysics Data System (ADS)

Saikia, Dhrubajyoti; Sarma, Ranjit

2018-01-01

The performance of an organic light-emitting diode (OLED) with a vacuum-deposited perylene layer over a fluorine-doped tin oxide (FTO) surface is reported. To investigate the effect of the perylene layer on OLED performance, different thicknesses of perylene are deposited on the FTO surface and their current density-voltages (J-V), luminance-voltages (L-V) and device efficiency characteristics at their respective thickness are studied. Further analysis is carried out with an UV-visible light double-beam spectrophotometer unit, a four-probe resistivity unit and a field emission scanning electron microscope set up to study the optical transmittance, sheet resistance and surface morphology of the bilayer anode film. We used N,N'-bis(3-methyl phenyl)- N,N'(phenyl)-benzidine (TPD) as the hole transport layer, Tris(8-hydroxyquinolinato)aluminum (Alq3) as a light-emitting layer and lithium fluoride as an electron injection layer. The luminance efficiency of an OLED structure with a 9-nm-thick perylene interlayer is increased by 2.08 times that of the single-layer FTO anode OLED. The maximum value of current efficiency is found to be 5.25 cd/A.

830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Higuchi, Yu; Osaki, Shinji; Sasahata, Yoshifumi; Kitada, Takahiro; Shimomura, Satoshi; Ogura, Mutsuo; Hiyamizu, Satoshi

2007-02-01

We report the first demonstration of room temperature (RT) current injection lasing of vertical-cavity surface-emitting lasers (VCSELs), with self-organized InGaAs/(GaAs)6(AlAs)1 quantum wires (QWRs) in their active region, grown on (775)B-oriented GaAs substrates by molecular beam epitaxy. A (775)B InGaAs QWR-VCSEL with an aperture diameter of 4 μm lased at a wavelength of 829.7 nm and a threshold current of 0.7 mA at RT. The light output was linearly polarized in the direction parallel to the QWRs due to optical anisotropy of the self-organized (775)B InGaAs QWRs.

Rational and random mutagenesis of firefly luciferase to identify an efficient emitter of red bioluminescence

NASA Astrophysics Data System (ADS)

Branchini, Bruce R.; Southworth, Tara L.; Khattak, Neelum F.; Murtiashaw, Martha H.; Fleet, Sarah E.

2004-06-01

Firefly luciferase, which emits yellow-green (557 nm) light, and the corresponding cDNA have been used successfully as a bioluminescence reporter of gene expression. One particularly exciting application is in the area of in vivo bioluminescence imaging. Our interest is in developing improved reagents by identifying Photinus pyralis luciferase mutants that efficiently emit red bioluminescence. In this way, the proven advantages of the P. pyralis protein can be combined with the potential advantages of a red-shifted emitter. Using site-directed mutagenesis techniques, we have identified many mutants emitting red bioluminescence. Unfortunately, these enzymes generally have significantly decreased bioluminescence activity. Interestingly, we discovered a mutation, Ile351Ala, that produced a moderate 16 nm red-shift, while maintaining excellent bioluminescence activity. We then undertook a random mutagenesis approach to identify luciferase mutants that emit further red-shifted bioluminescence with minimal loss of activity. Libraries of mutants were created using an error-prone PCR method and the Ile351Ala luciferase mutant as the template DNA. The libraries were screened by in vivo bacterial assays and the promising mutants were purified to enable accurate determination of bioluminescence emission spectra and total bioluminescence activity. We will report the characterization results, including the identification of the randomly altered amino acids, of several mutants that catalyze bioluminescence with emission maxima of approximately 600 nm.

Silicon carbide white light LEDs for solid-state lighting

NASA Astrophysics Data System (ADS)

Bet, Sachin; Quick, Nathaniel; Kar, Aravinda

2007-02-01

White light emitting diodes (LEDs) have been successfully fabricated for the first time in silicon carbide substrates (4H-SiC) using a novel laser doping technique. The donor-acceptor pair (DAP) recombination mechanism for luminescence has been used to tailor these LEDs. Chromium (Cr), which produces multiple acceptor sites per atom, and selenium which produces multiple donor sites per atom were successfully incorporated into SiC for the first time using laser doping. Aluminum (Al) and nitrogen (N) were also laser-doped into SiC. Green (521-575 nm) and blue (460-498 nm) wavelengths were observed due to radiative recombination transitions between donor-acceptors pairs of N-Cr and N-Al respectively, while a prominent violet (408 nm) wavelength was observed due to transitions from the nitrogen level to the valence band level. The red (698-738 nm) luminescence was mainly due to nitrogen excitons and other defect levels. This RGB combination produced a broadband white light spectrum extending from 380 to 900 nm. The color space tri-stimulus values were X = 0.3322, Y = 0.3320 and Z = 0.3358 as per 1931 CIE (International Commission on Illumination) for 4H-SiC corresponding to a color rendering index of 96.56; the color temperature of 5510 K is very close to average daylight (5500 K).

Electrical degradation of triarylamine-based light-emitting polymer diodes monitored by micro-Raman spectroscopy

NASA Astrophysics Data System (ADS)

Kim, Ji-Seon; Ho, Peter K. H.; Murphy, Craig E.; Seeley, Alex J. A. B.; Grizzi, Ilaria; Burroughes, Jeremy H.; Friend, Richard H.

2004-03-01

Although much progress has been made in improving polymer light-emitting diode performance, there has been little work to address device intrinsic degradation mechanisms due to the challenge of tracking minute chemical reactions in the 100-nm-thick buried active layers during operation. Here we have elucidated a hole-mediated electrical degradation of triarylamine-based blue polymer diodes using in situ Raman microspectroscopy. A slow irreversible hole-doping of polymer adjacent to the hole-injecting conducting-polymer leads to formation of oxidised triarylamine species counterbalanced by anions from the conducting-polymer. These charged species act as luminescence quenchers and hinder further hole injection across the interface leading to significant decreases in current density at low voltages.

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes.

PubMed

Li, Luping; Zhang, Yonghui; Xu, Shu; Bi, Wengang; Zhang, Zi-Hui; Kuo, Hao-Chung

2017-10-24

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications

PubMed Central

2013-01-01

GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiNx layer formed spontaneously at the AlN/Si interface. N-doped wires are used as templates for the growth of core-shell InGaN/GaN multiple quantum wells coated by a p-doped shell. Standing single-wire heterostructures are connected using a metallic tip and a Si substrate backside contact, and the electroluminescence at room temperature and forward bias is demonstrated at 420 nm. This result points out the feasibility of lower cost nitride-based wires for light-emitting diode applications. PMID:23391377

Promotion of neural sprouting using low-level green light-emitting diode phototherapy

NASA Astrophysics Data System (ADS)

Alon, Noa; Duadi, Hamootal; Cohen, Ortal; Samet, Tamar; Zilony, Neta; Schori, Hadas; Shefi, Orit; Zalevsky, Zeev

2015-02-01

We irradiated neuroblastoma SH-SY5Y cell line with low-level light-emitting diode (LED) illumination at a visible wavelength of 520 nm (green) and intensity of 100 mW/cm2. We captured and analyzed the cell morphology before LED treatment, immediately after, and 12 and 24 h after treatment. Our study demonstrated that LED illumination increases the amount of sprouting dendrites in comparison to the control untreated cells. This treatment also resulted in more elongated cells after treatment in comparison to the control cells and higher levels of expression of a differentiation related gene. This result is a good indication that the proposed method could serve in phototherapy treatment for increasing sprouting and enhancing neural network formation.

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

PubMed Central

Li, Luping; Zhang, Yonghui; Kuo, Hao-Chung

2017-01-01

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs. PMID:29073738

Current crowding and self-heating effects in AlGaN-based flip-chip deep-ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Hao, Guo-Dong; Taniguchi, Manabu; Tamari, Naoki; Inoue, Shin-ichiro

2018-01-01

We thoroughly explored the physical origin of the efficiency decrease with increasing injection current and current crowding effect in 280 nm AlGaN-based flip-chip deep-ultraviolet (DUV) light-emitting diodes (LEDs). The current spreading length was experimentally determined to be much smaller in DUV LEDs than that in conventional InGaN-based visible LEDs. The severe self-heating caused by the low power conversion efficiency of DUV LEDs should be mainly responsible for the considerable decrease of efficiency when current crowding is present. The wall-plug efficiency of the DUV LEDs was markedly enhanced by using a well-designed p-electrode pattern to improve the current distribution.

Frequency-doubled vertical-external-cavity surface-emitting laser

DOEpatents

Raymond, Thomas D.; Alford, William J.; Crawford, Mary H.; Allerman, Andrew A.

2002-01-01

A frequency-doubled semiconductor vertical-external-cavity surface-emitting laser (VECSEL) is disclosed for generating light at a wavelength in the range of 300-550 nanometers. The VECSEL includes a semiconductor multi-quantum-well active region that is electrically or optically pumped to generate lasing at a fundamental wavelength in the range of 600-1100 nanometers. An intracavity nonlinear frequency-doubling crystal then converts the fundamental lasing into a second-harmonic output beam. With optical pumping with 330 milliWatts from a semiconductor diode pump laser, about 5 milliWatts or more of blue light can be generated at 490 nm. The device has applications for high-density optical data storage and retrieval, laser printing, optical image projection, chemical-sensing, materials processing and optical metrology.

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure

PubMed Central

Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung

2016-01-01

Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach. PMID:27170543

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure.

PubMed

Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung

2016-05-12

Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach.

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure

NASA Astrophysics Data System (ADS)

Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung

2016-05-01

Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach.

Synthesis and characterization of pure and Li⁺ activated Alq₃ complexes for green and blue organic light emitting diodes and display devices.

PubMed

Bhagat, S A; Borghate, S V; Kalyani, N Thejo; Dhoble, S J

2014-08-01

Pure and Li(+)-doped Alq3 complexes were synthesized by simple precipitation method at room temperature, maintaining the stoichiometric ratio. These complexes were characterized by X-ray diffraction, ultraviolet-visible absorption and Fourier transform infrared and photoluminescence (PL) spectra. X-ray diffraction analysis reveals the crystalline nature of the synthesized complexes, while Fourier transform infrared spectroscopy confirm the molecular structure, the completion of quinoline ring formation and presence of quinoline structure in the metal complex. Ultraviolet-visible and PL spectra revealed that Li(+) activated Alq3 complexes exhibit the highest intensity in comparison to pure Alq3 phosphor. Thus, Li(+) enhances PL emission intensity when doped into Alq3 phosphor. The excitation spectra lie in the range of 383-456 nm. All the synthesized complexes other than Liq give green emission, while Liq gives blue emission with enhanced intensity. Thus, he synthesized phosphors are the best suitable candidates for green- and blue-emitting organic light emitting diode, PL liquid-crystal display and solid-state lighting applications. Copyright © 2013 John Wiley & Sons, Ltd.

Rapid microwave-assisted synthesis of highly luminescent nitrogen-doped carbon dots for white light-emitting diodes

NASA Astrophysics Data System (ADS)

Wang, Yaling; Zheng, Jingxia; Wang, Junli; Yang, Yongzhen; Liu, Xuguang

2017-11-01

Highly luminescent nitrogen-doped carbon dots (N-CDs) were synthesized rapidly by one-step microwave-assisted hydrothermal method using citric acid as carbon source and ethylenediamine as dopant. The influences of reaction temperature, reaction time and raw material ratio on the fluorescence performance of N-CDs were investigated. Then N-CDs with the highest quantum yield were selected as fluorescent materials for fabricating white light-emitting diodes (LEDs). Highly luminescent N-CDs with the quantum yield of 75.96% and blue-to-red spectral composition of 51.48% were obtained at the conditions of 180 °C, 8 min and the molar ratio of citric acid to ethylenediamine 2:1. As-prepared highly luminescent N-CDs have an average size of 6.06 nm, possess extensive oxygen- and nitrogen-containing functional groups on their surface, and exhibit strong absorption in ultraviolet region. White LEDs based on the highly luminescent N-CDs emit warm white light with color coordinates of (0.42, 0.40) and correlated color temperature of 3416 K.

Hydrothermal growth of n-ZnO films on a patterned p-GaN epilayer and its application in heterojunction light-emitting diodes

NASA Astrophysics Data System (ADS)

Ko, Rong-Ming; Wang, Shui-Jinn; Chen, Ching-Yi; Wu, Cheng-Han; Lin, Yan-Ru; Lo, Hsin-Ming

2017-04-01

The hydrothermal growth (HTG) of crystalline n-ZnO films on both the nonpatterned and patterned p-GaN epilayers with a honeycomb array of etched holes is demonstrated, and its application in n-ZnO/p-GaN heterojunction light-emitting diodes (HJ-LEDs) is reported. The results reveal that an HTG n-ZnO film on a patterned p-GaN layer exhibits a high-quality single crystal with FWHMs of 0.463 and 0.983° obtained from a ω-rocking curve and a ϕ-scan pattern, respectively, which are much better than those obtained on a nonpatterned p-GaN layer. In addition, the n-ZnO/patterned p-GaN HJ-LED exhibited a much better rectifying diode behavior owing to having a higher n-ZnO film crystallinity quality and an improved interface with the p-GaN layer. Strong violet and violet-blue lights emitted from the n-ZnO/patterned p-GaN HJ-LED at around 405, 412, and 430 nm were analyzed.

Metal substrates with nanometer scale surface roughness for flexible electronics

NASA Astrophysics Data System (ADS)

Lee, Jong-Lam; Kim, Kisoo

2012-09-01

In this work, we present a novel way in fabricating a metal substrate with nanometer scale in surface roughness (Ra < 1 nm) using a surface roughness transfer method without any polishing or planarization process. Ag film (8 inch, Ra = 0.57 nm) and an INVAR (Invariable alloy) one (20 cm × 20 cm, Ra = 1.40 nm) were demonstrated. The INVAR film was used as a substrate for fabricating organic light emitting diodes (OLED) and organic photovoltaic (OPV). The optical and electrical characteristics of OLEDs and OPVs using the INVAR were comparable to those using a conventional ITO glass substrate.

Sugarcane bagasse hydrolysate as a potential feedstock for red pigment production by Monascus ruber.

PubMed

Terán Hilares, Ruly; de Souza, Rebeca Andrade; Marcelino, Paulo Franco; da Silva, Silvio Silvério; Dragone, Giuliano; Mussatto, Solange I; Santos, Júlio César

2018-04-15

Sugarcane bagasse (SCB) hydrolysate could be an interesting source for red pigment production by Monascus ruber Tieghem IOC 2225. The influence of different wavelength of light-emitting diode (LED) at 250 μmol.m -2 .s -1 of photon flux density on red pigment production by M. ruber in glucose-based medium was evaluated. Then, SCB hydrolysate was used as carbon source under the previously selected light incidence conditions. In glucose-based medium, the highest pigment production was achieved in fermentation assisted with orange LED light (8.28 UA 490nm ), white light (8.26 UA 490nm ) and under dark condition (7.45 UA 490nm ). By using SCB hydrolysate-based medium, the highest red pigment production (18.71 AU 490nm ) was achieved under dark condition and the glucose and cellobiose present in the hydrolysate were metabolized. SCB enzymatic hydrolysate was demonstrated to be a promising carbon source for high thermal stability red pigment production (activation energy of 10.5 kcal.mol -1 ), turning an interesting alternative for implementation in biorefineries. Copyright © 2017 Elsevier Ltd. All rights reserved.

Sr(1.7)Zn(0.3)CeO4: Eu3+ novel red-emitting phosphors: synthesis and photoluminescence properties.

PubMed

Li, Haifeng; Zhao, Ran; Jia, Yonglei; Sun, Wenzhi; Fu, Jipeng; Jiang, Lihong; Zhang, Su; Pang, Ran; Li, Chengyu

2014-03-12

A series of novel red-emitting Sr1.7Zn0.3CeO4:Eu(3+) phosphors were synthesized through conventional solid-state reactions. The powder X-ray diffraction patterns and Rietveld refinement verified the similar phase of Sr1.7Zn0.3CeO4:Eu(3+) to that of Sr2CeO4. The photoluminescence spectrum exhibits that peak located at 614 nm ((5)D0-(7)F2) dominates the emission of Sr1.7Zn0.3CeO4:Eu(3+) phosphors. Because there are two regions in the excitation spectrum originating from the overlap of the Ce(4+)-O(2-) and Eu(3+)-O(2-) charge-transfer state band from 200 to 440 nm, and from the intra-4f transitions at 395 and 467 nm, the Sr1.7Zn0.3CeO4:Eu(3+) phosphors can be well excited by the near-UV light. The investigation of the concentration quenching behavior, luminescence decay curves, and lifetime implies that the dominant mechanism type leading to concentration quenching is the energy transfer among the nearest neighbor or next nearest neighbor activators. The discussion about the dependence of photoluminescence spectra on temperature shows the better thermal quenching properties of Sr1.7Zn0.3CeO4:0.3Eu(3+) than that of Sr2CeO4:Eu(3+). The experimental data indicates that Sr1.7Zn0.3CeO4:Eu(3+) phosphors have the potential as red phosphors for white light-emitting diodes.

Mechanism of hole injection enhancement in light-emitting diodes by inserting multiple hole-reservoir layers in electron blocking layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Yukun; Wang, Shuai; Feng, Lungang

In this study, gallium nitride (GaN) based light-emitting diodes (LEDs) with single and multiple hole-reservoir layers (HRLs) inserted in the electron-blocking layer (EBL) have been investigated numerically and experimentally. According to simulation results, a better electron confinement and a higher hole injection level can be achieved by the multiple HRLs inserted in the EBL region. To further reveal the underlying mechanism of hole injection enhancement experimentally, the active regions were intentionally designed to emit photons with three different wavelengths of 440 nm, 460 nm, and 480 nm, respectively. Based on the experimental results of photoluminescence (PL) and time-resolved PL (TRPL) measurements conducted atmore » 298 K, the remarkable enhancement (148%) of PL intensities and significant increase in the decay times of the quantum wells close to p-GaN can be obtained. Therefore, the mechanism is proposed that carriers are able to reserve in the EBL region with multiple HRLs for a much longer time. Meanwhile, carriers could diffuse into the active region by tunnelling and/or thermo-electronic effect and then recombine efficiently, leading to the better carrier reservoir effect and higher hole injection in LEDs. As a result, by inserting multiple HRLs in the EBL region instead of single HRL, the experimental external quantum efficiency is enhanced by 19.8%, while the serious droop ratio is markedly suppressed from 37.0% to 27.6% at the high current injection of 100 A/cm{sup 2}.« less

Enhanced device performances of a new inverted top-emitting OLEDs with relatively thick Ag electrode.

PubMed

Park, So-Ra; Suh, Min Chul

2018-02-19

To improve the device performances of top-emitting organic light emitting diodes (TEOLEDs), we developed a new inverted TEOLEDs structure with silver (Ag) metal as a semi-transparent top electrode. Especially, we found that the use of relatively thick Ag electrode without using any carrier injection layer is beneficial to realize highly efficient device performances. Also, we could insert very thick overlying hole transport layer (HTL) on the emitting layer (EML) which could be very helpful to suppress the surface plasmon polariton (SPP) coupling if it is applied to the common bottom-emission OLEDs (BEOLEDs). As a result, we could realize noteworthy high current efficiency of approximately ~188.1 cd/A in our new inverted TEOLEDs with 25 nm thick Ag electrode.

Synthesis and Crystal Structure of Highly Strained [4]Cyclofluorene: Green-Emitting Fluorophore.

PubMed

Liu, Yu-Yu; Lin, Jin-Yi; Bo, Yi-Fan; Xie, Ling-Hai; Yi, Ming-Dong; Zhang, Xin-Wen; Zhang, Hong-Mei; Loh, Teck-Peng; Huang, Wei

2016-01-15

[4]Cyclo-9,9-dipropyl-2,7-fluorene ([4]CF) with the strain energy of 79.8 kcal/mol is synthesized in high quantum yield. Impressively, hoop-shaped [4]CF exhibits a green fluorescence emission around 512 nm offering a new explanation for the green band (g-band) in polyfluorenes. The solution-processed [4]CF-based organic light emitting diode (OLED) has also been fabricated with the a stronger green band emission. Strained semiconductors offer a promising approach to fabricating multifunctional optoelectronic materials in organic electronics and biomedicine.

Thermal characterization of GaN-based laser diodes by forward-voltage method

NASA Astrophysics Data System (ADS)

Feng, M. X.; Zhang, S. M.; Jiang, D. S.; Liu, J. P.; Wang, H.; Zeng, C.; Li, Z. C.; Wang, H. B.; Wang, F.; Yang, H.

2012-05-01

An expression of the relation between junction temperature and forward voltage common for both GaN-based laser diodes (LDs) and light emitting diodes is derived. By the expression, the junction temperature of GaN-based LDs emitting at 405 nm was measured at different injection current and compared with the result of micro-Raman spectroscopy, showing that the expression is reasonable. In addition, the activation energy of Mg in AlGaN/GaN superlattice layers is obtained based on the temperature dependence of forward voltage.

Hybrid single quantum well InP/Si nanobeam lasers for silicon photonics.

PubMed

Fegadolli, William S; Kim, Se-Heon; Postigo, Pablo Aitor; Scherer, Axel

2013-11-15

We report on a hybrid InP/Si photonic crystal nanobeam laser emitting at 1578 nm with a low threshold power of ~14.7 μW. Laser gain is provided from a single InAsP quantum well embedded in a 155 nm InP layer bonded on a standard silicon-on-insulator wafer. This miniaturized nanolaser, with an extremely small modal volume of 0.375(λ/n)(3), is a promising and efficient light source for silicon photonics.

Luminescence properties of ZrW{sub 2}O{sub 8}:Eu{sup 3+} nanophosphors for white light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liao, Jinsheng, E-mail: jsliao1209@126.com; Liu, Shaohua; Wen, He-Rui

2015-10-15

Highlights: • Eu{sup 3+} ions occupy C{sub 1} point group of the Zr{sup 4+} site in ZrW{sub 2}O{sub 8} crystals. • The optimum doping concentration of Eu{sup 3+} was determined for the red emission. • ZrW{sub 2}O{sub 8}:Eu possess high quantum efficiency and suitable chromaticity coordinates. - Abstract: ZrW{sub 2}O{sub 8}:Eu{sup 3+} nanophosphors (ca. 60 nm) with different Eu{sup 3+} doping concentrations were obtained using hydrothermal syntheses. X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), photoluminescence excitation and emission spectra as well as decay curve measurements were used for the characterization. Under 466 nm excitation, strong redmore » emission at 616 nm corresponding to {sup 5}D{sub 0}–{sup 7}F{sub 2} transition of Eu{sup 3+} was observed for ZrW{sub 2}O{sub 8}:Eu{sup 3+} (9 mol%) phosphors. The values of intensity parameter Ω{sub 2} and Ω{sub 4} are 17.82 × 10{sup −20} cm{sup 2} and 1.092 × 10{sup −20} cm{sup 2}, respectively. The high quantum efficiency of 83.5% of the ZrW{sub 2}O{sub 8}:Eu{sup 3+} (9 mol%) suggests this material could be promising red phosphor for generating white light in phosphor-converted white light-emitting diodes (LED)« less

Combined fluorescence-Raman spectroscopy measurements with an optical fiber probe for the diagnosis of melanocytic lesions

NASA Astrophysics Data System (ADS)

Cosci, Alessandro; Cicchi, Riccardo; Rossari, Susanna; De Giorgi, Vincenzo; Massi, Daniela; Pavone, Francesco S.

2012-02-01

We have designed and developed an optical fiber-probe for spectroscopic measurements on human tissues. The experimental setup combines fluorescence spectroscopy and Raman spectroscopy in a multidimensional approach. Concerning fluorescence spectroscopy, the excitation is provided by two laser diodes, one emitting in the UV (378 nm) and the other emitting in the visible (445 nm). These two lasers are used to selectively excite fluorescence from NADH and FAD, which are among the brightest endogenous fluorophores in human tissues. For Raman and NIR spectroscopy, the excitation is provided by a third laser diode with 785 nm excitation wavelength. Laser light is delivered to the tissue through the central optical fiber of a fiber bundle. The surrounding 48 fibers of the bundle are used for collecting fluorescence and Raman and for delivering light to the spectrograph. Fluorescence and Raman spectra are acquired on a cooled CCD camera. The instrument has been tested on fresh human skin biopsies clinically diagnosed as malignant melanoma, melanocytic nevus, or healthy skin, finding an optimal correlation with the subsequent histological exam. In some cases our examination was not in agreement with the clinical observation, but it was with the histological exam, demonstrating that the system can potentially contribute to improve clinical diagnostic capabilities and hence reduce the number of unnecessary biopsies.

Double optical fibre-probe device for the diagnosis of melanocytic lesions

NASA Astrophysics Data System (ADS)

Cicchi, Riccardo; Cosci, Alessandro; Rossari, Susanna; De Giorgi, Vincenzo; Kapsokalyvas, Dimitrios; Massi, Daniela; Pavone, Francesco S.

2012-06-01

We have designed and developed an optical fiber-probe for spectroscopic measurements on human tissues. The experimental setup combines fluorescence spectroscopy and Raman spectroscopy in a multidimensional approach. Concerning fluorescence spectroscopy, the excitation is provided by two laser diodes, one emitting in the UV (378 nm) and the other emitting in the visible (445 nm). These two lasers are used to selectively excite fluorescence from NADH and FAD, which are among the brightest endogenous fluorophores in human tissues. For Raman and NIR spectroscopy, the excitation is provided by a third laser diode with 785 nm excitation wavelength. Laser light is delivered to the tissue through the central optical fiber of a fiber bundle. The surrounding 48 fibers of the bundle are used for collecting fluorescence and Raman and for delivering light to the spectrograph. Fluorescence and Raman spectra are acquired on a cooled CCD camera. The instrument has been tested on fresh human skin biopsies clinically diagnosed as malignant melanoma, melanocytic nevus, or healthy skin, finding an optimal correlation with the subsequent histological exam. In some cases our examination was not in agreement with the clinical observation, but it was with the histological exam, demonstrating that the system can potentially contribute to improve clinical diagnostic capabilities and hence reduce the number of unnecessary biopsies.

Assessing the therapeutic effect of 625-nm light-emitting diodes

NASA Astrophysics Data System (ADS)

Mao, Zongzhen; Xu, Guodong; Yang, Yi

2014-09-01

To evaluate the effects of red Light-Emitting Diodes on elbow extensor and flexor strength and the recovery of exercise induced fatigue, the torque values from the isokinetic dynamometer as well as biochemistry parameters were used as outcome measures. A randomized double-blind placebo-controlled crossover trial was performed with twenty male young tennis athletes. Active LED therapy (LEDT, with wavelength 625nm, 10 minutes total irradiation time, irradiated area amount to 30cm2, and 900J of total energy irradiated) or an identical placebo was delivered under double-blinded conditions to the left elbow just before exercise. The isokinetic muscle strength was measured immediately after irradiation. The blood lactate levels were sampled pre-exercise and post-exercise. The peak torque values of elbow extensor strength were significantly different between two groups. As in elbow flexor strength, the difference of peak torque was not significant. The blood lactate concentration of LEDT group post-exercise was significantly lower than those of placebo group. The results indicate that 625nm LED therapy is effective in preventing muscle fatigue as it can significantly reduce peak torque value of elbow extensors and blood lactate concentration. It has no effect on the strength of left elbow flexor or backhand performance in tennis.

Effects of Light-Emitting Diode Therapy on Muscle Hypertrophy, Gene Expression, Performance, Damage, and Delayed-Onset Muscle Soreness: Case-control Study with a Pair of Identical Twins.

PubMed

Ferraresi, Cleber; Bertucci, Danilo; Schiavinato, Josiane; Reiff, Rodrigo; Araújo, Amélia; Panepucci, Rodrigo; Matheucci, Euclides; Cunha, Anderson Ferreira; Arakelian, Vivian Maria; Hamblin, Michael R; Parizotto, Nivaldo; Bagnato, Vanderlei

2016-10-01

The aim of this study was to verify how a pair of monozygotic twins would respond to light-emitting diode therapy (LEDT) or placebo combined with a strength-training program during 12 weeks. This case-control study enrolled a pair of male monozygotic twins, allocated randomly to LEDT or placebo therapies. Light-emitting diode therapy or placebo was applied from a flexible light-emitting diode array (λ = 850 nm, total energy = 75 J, t = 15 seconds) to both quadriceps femoris muscles of each twin immediately after each strength training session (3 times/wk for 12 weeks) consisting of leg press and leg extension exercises with load of 80% and 50% of the 1-repetition maximum test, respectively. Muscle biopsies, magnetic resonance imaging, maximal load, and fatigue resistance tests were conducted before and after the training program to assess gene expression, muscle hypertrophy and performance, respectively. Creatine kinase levels in blood and visual analog scale assessed muscle damage and delayed-onset muscle soreness, respectively, during the training program. Compared with placebo, LEDT increased the maximal load in exercise and reduced fatigue, creatine kinase, and visual analog scale. Gene expression analyses showed decreases in markers of inflammation (interleukin 1β) and muscle atrophy (myostatin) with LEDT. Protein synthesis (mammalian target of rapamycin) and oxidative stress defense (SOD2 [mitochondrial superoxide dismutase]) were up-regulated with LEDT, together with increases in thigh muscle hypertrophy. Light-emitting diode therapy can be useful to reduce muscle damage, pain, and atrophy, as well as to increase muscle mass, recovery, and athletic performance in rehabilitation programs and sports medicine.

Structural studies of a green-emitting terbium doped calcium zinc phosphate phosphor

NASA Astrophysics Data System (ADS)

Ramesh, B.; Dillip, G. R.; Rambabu, B.; Joo, S. W.; Raju, B. Deva Prasad

2018-03-01

In this study, a new green emitting CaZn2(PO4)2:Tb3+ phosphors were synthesized through solid-state reaction route. The phosphors were characterized structurally by X-ray diffraction, Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). All the synthesized phosphors were crystallized in triclinic crystal structure with P 1 bar space group. The phosphate groups in the phosphors were confirmed by FTIR analysis. The surface elements O 1s, P 2p, Ca 2p, Zn 2p and Tb 3d were studied by high-resolution XPS spectra. Upon excitation at 378 nm, the dominant green emission of CaZn2(PO4)2:Tb3+ phosphors at 542 nm were noticed in the emission spectra. For various emission wavelengths (at 435 and 489 nm) and constant excitation wavelength (at 378 nm), the decay curves have shown two different decay dynamics of phosphors. The lighting properties such as Commission International de l'Eclairage (x = 0.319, y = 0.398) and color temperature (5995 K) were calculated.

Blue light emission from the heterostructured ZnO/InGaN/GaN

PubMed Central

2013-01-01

ZnO/InGaN/GaN heterostructured light-emitting diodes (LEDs) were fabricated by molecular beam epitaxy and atomic layer deposition. InGaN films consisted of an Mg-doped InGaN layer, an undoped InGaN layer, and a Si-doped InGaN layer. Current-voltage characteristic of the heterojunction indicated a diode-like rectification behavior. The electroluminescence spectra under forward biases presented a blue emission accompanied by a broad peak centered at 600 nm. With appropriate emission intensity ratio, the heterostructured LEDs had potential application in white LEDs. Moreover, a UV emission and an emission peak centered at 560 nm were observed under reverse bias. PMID:23433236

Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials.

PubMed

Chen, Hao; Zhang, Qi; Chou, Stephen Y

2015-02-27

Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.

Growth of cress seedlings and morphogenesis of root Gravisensors under clino-rotation and in unidirectional red or blue light

NASA Astrophysics Data System (ADS)

Rakleviciene, D.; Svegzdiene, D.; Tamulaitis, G.; Zukauskas, A.

2005-08-01

The growth rate and orientation of cress seedlings in response to the direction of illumination under clino- rotation were investigated at the initial stage of intensive hypocotyl elongation. Roots and hypocotyls growing in normal gravity conditions (1 g) and under clino-rotation at 3 rpm were illuminated with red (660 nm) or blue (450 nm) light from light-emitting diodes (LEDs). Unidirectional illumination in the direction opposite to the gravity vector promoted the growth rate of roots. Inhibition of gravitropism by clino-rotation reduced the growth of roots and stimulated the elongation of hypocotyls in both red and blue light. Illumination of roots invoked changes in the formation of gravisensing cells in the columella. Illumination under clino-rotation stimulated root statocyte growth and increased the number of amyloplasts in cells of the 3rd-6th columella rows. Also, an increase in the columella cell area, mainly caused by cell elongation in blue light and by enhanced radial growth in red light, was observed.

Acclimations to light quality on plant and leaf level affect the vulnerability of pepper (Capsicum annuum L.) to water deficit.

PubMed

Hoffmann, Anna M; Noga, Georg; Hunsche, Mauricio

2015-03-01

We investigated the influence of light quality on the vulnerability of pepper plants to water deficit. For this purpose plants were cultivated either under compact fluorescence lamps (CFL) or light-emitting diodes (LED) providing similar photon fluence rates (95 µmol m(-2) s(-1)) but distinct light quality. CFL emit a wide-band spectrum with dominant peaks in the green and red spectral region, whereas LEDs offer narrow band spectra with dominant peaks at blue (445 nm) and red (665 nm) regions. After one-week acclimation to light conditions plants were exposed to water deficit by withholding irrigation; this period was followed by a one-week regeneration period and a second water deficit cycle. In general, plants grown under CFL suffered more from water deficit than plants grown under LED modules, as indicated by the impairment of the photosynthetic efficiency of PSII, resulting in less biomass accumulation compared to respective control plants. As affected by water shortage, plants grown under CFL had a stronger decrease in the electron transport rate (ETR) and more pronounced increase in heat dissipation (NPQ). The higher amount of blue light suppressed plant growth and biomass formation, and consequently reduced the water demand of plants grown under LEDs. Moreover, pepper plants exposed to high blue light underwent adjustments at chloroplast level (e.g., higher Chl a/Chl b ratio), increasing the photosynthetic performance under the LED spectrum. Differently than expected, stomatal conductance was comparable for water-deficit and control plants in both light conditions during the stress and recovery phases, indicating only minor adjustments at the stomatal level. Our results highlight the potential of the target-use of light quality to induce structural and functional acclimations improving plant performance under stress situations.

Preparation and photoluminescence properties of red-emitting phosphor ZnAl2O4:Eu3+ with an intense 5D0 → 7F2 transition

NASA Astrophysics Data System (ADS)

He, Can; Ji, Haipeng; Huang, Zhaohui; Zhang, Xiaoguang; Liu, Haitao; Liu, Silin; Liu, Yangai; Fang, Minghao; Wu, Xiaowen; Min, Xin

2018-02-01

A series of ZnAl2-x O4:xEu3+ phosphors was synthesized by a modified co-precipitation method. The phase structure and photoluminescence properties were examined and extensively discussed. Composition-optimized ZnAl1.97O4:0.03Eu3+ exhibited sharp, intense red characteristic emissions with the Commission Internationale de l’Eclairage coordinates of (0.62, 0.33) peaking at 620 nm under an excitation at 394 nm, corresponding to the 5D0 → 7F2 transition of Eu3+. The quenching concentration of Eu3+ in ZnAl2-x O4:xEu3+ phosphors was approximately 0.03. In addition, the concentration quenching mechanism, fluorescence decay curves, and thermally stable luminescence properties of ZnAl2-x O4:xEu3+ phosphors were investigated. The results indicated that ZnAl2-x O4:xEu3+ phosphors demonstrate potential applications in near-ultraviolet light-emitting diode pumped white light lamps.

Highly reliable Ag/Zn/Ag ohmic reflector for high-power GaN-based vertical light-emitting diode.

PubMed

Yum, Woong-Sun; Jeon, Joon-Woo; Sung, Jun-Suk; Seong, Tae-Yeon

2012-08-13

We report the improved performance of InGaN/GaN-based light-emitting diodes (LEDs) through Ag reflectors combined with a Zn middle layer. It is shown that the Zn middle layer (5 nm thick) suppresses the agglomeration of Ag reflectors by forming ZnO and dissolving into Ag. The Ag/Zn/Ag contacts show a specific contact resistance of 6.2 × 10(-5) Ωcm(2) and reflectance of ~83% at a wavelength of 440 nm when annealed at 500 °C, which are much better than those of Ag only contacts. Blue LEDs fabricated with the 500 °C-annealed Ag/Zn/Ag reflectors show a forward voltage of 2.98 V at an injection current of 20 mA, which is lower than that (3.02 V) of LEDs with the annealed Ag only contacts. LEDs with the 500 °C-annealed Ag/Zn/Ag contacts exhibit 34% higher output power (at 20 mA) than LEDs with the annealed Ag only contacts.

Synthesis and luminescence properties of Eu3+-doped KLa(MoO4)2 red-emitting phosphor

NASA Astrophysics Data System (ADS)

Zuo, Haoqiang; Liu, Yun; Li, Jinyang; Shi, Xiaolei; Gao, Weiping

2015-09-01

Eu3+-doped KLa(MoO4)2 phosphors were synthesized by a simple hydrothermal method. X-ray diffraction (XRD) analysis demonstrated that the as-prepared products were pure monoclinic phase of KLa(MoO4)2. Field emission scanning electron microscopy (FE-SEM) images indicated that the morphology of the prepared phosphors evolved from uniform spherical-like to irregular elliposid-like with increase of the concentration. The photoluminescence (PL) spectra displayed that the phosphors show strong red light around 618 nm, attributed to 5D0 → 7F2 transition of Eu3+ ion under 465 nm excitation, and the optimal Eu3+ doping concentration was about 15 mol.% based on the concentration dependent emission spectra. According to Dexter's theory the electric dipole-dipole interaction (D-D) is the main mechanism for energy transfer between Eu3+ and Eu3+ ions. The CIE chromaticity (x, y) of the phosphors were about (0.65, 0.35) and it is close to the standard red chromaticity of NTSC. Therefore, the phosphors could be used as red phosphors for white light-emitting diodes.

Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes

PubMed Central

2013-01-01

We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga2O3 NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga2O3 NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga2O3 films (current level 9.9 × 10-9 A @ 1 V, transmittance 68% @ 280 nm), the current level flowing in the Ga2O3 NP/SWNT increased by approximately 4 × 105 times and the transmittance improved by 9% after 15 times dip-coating (current level 4 × 10-4 A at 1 V; transmittance 77.0% at 280 nm). These improvements result from both native high transparency of Ga2O3 NPs and high conductivity and effective current spreading of SWNTs. PMID:24295342

Sharp green electroluminescence from 1H-pyrazolo[3,4-b]quinoline-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Tao, Y. T.; Balasubramaniam, E.; Danel, A.; Jarosz, B.; Tomasik, P.

2000-09-01

A multilayer organic light-emitting diode was fabricated using a fluorescent compound {6-N,N-diethylamino-1-methyl-3-phenyl-1H-pyrazolo[3,4-b]quinoline} (PAQ-NEt2) doped into the hole-transporting layer of NPB {4,4'-bis[N-(1-naphthyl-1-)-N-phenyl-amino]-biphenyl}, with the TPBI {2,2',2″-(1,3,5-phenylene)tris[1-phenyl-1H-benzimidazole]} as an electrontransporting material. At 16% PAQ-NEt2 doping concentration, the device gave a sharp, bright, and efficient green electroluminescence (EL) peaked at around 530 nm. The full width at half maximum of the EL is 60 nm, which is 60% of the green emission from typical NPB/AlQ [where AlQ=tris(8-hydroxyquinoline) aluminum] device. For the same concentration, a maximum luminance of 37 000 cd/m2 was obtained at 10.0 V and the maximum power, luminescence, and external quantum efficiencies were obtained 4.2 lm/W, 6.0 cd/A, and 1.6%, respectively, at 5.0 V.

A new approach for white organic light-emitting diodes of single emitting layer using large stokes shift.

PubMed

Kim, Beomjin; Park, Youngil; Kim, Seungho; Lee, Younggu; Park, Jongwook

2014-08-01

DPPZ showed UV-Vis. and PL maximum values of 412 and 638 nm, meaning the large stokes shift. Blue host compound, TAT was synthesized and used for co-mixed white emission. TAT exhibited UV-Vis. and PL maximum values of 403 nm and 445 nm in film state. Thus, when two compounds are used as co-mixed emitter in OLED device, there is no energy transfer from blue emission of TAT to DPPZ due to large stokes shift of DPPZ. Based on the PL result, it is available to realize two-colored white in PL and EL spectra. As a result of this, two-mixed compounds showed vivid their own PL emission peaks of 449 and 631 nm in film state. Also, white OLED device using two-mixed compounds system was fabricated. EL spectrum shows 457 and 634 nm peaks and two separate EL peaks, respectively. As the operation voltage is increased from 7 to 11 V, EL spectrum does not change the peak shape and maximum wavelength values. EL performance of white device showed 0.29 cd/A, 0.14 lm/W, and CIE (0.325, 0.195) at 7 V.

Visible absorption properties of radiation exposed XR type-T radiochromic film.

PubMed

Butson, Martin J; Cheung, Tsang; Yu, Peter K N

2004-10-07

The visible absorption spectra of Gafchromic XR type-T radiochromic film have been investigated to analyse the dosimetry characteristics of the film with visible light densitometers. Common densitometers can use photospectrometry, fluorescent light (broad-band visible), helium neon (632 nm), light emitting diode (LED) or other specific bandwidth spectra. The visible absorption spectra of this film when exposed to photon radiation show peaks at 676 nm and 618 nm at 2 Gy absorbed doses which shift to slightly lower wavelengths (662 nm and 612 nm at 8 Gy absorbed dose) at higher doses. This is similar to previous models of Gafchromic film such as MD-55-2 and HS but XR type-T also includes a large absorption at lower visible wavelengths due to 'yellow' dyes placed within the film to aid with visible recognition of the film exposure level. The yellow dye band pass is produced at approximately 520 nm to 550 nm and absorbs wavelengths lower than this value within the visible spectrum. This accounts for the colour change from yellow to brown through the added absorption in the red wavelengths with radiation exposure. The film produces a relatively high dose sensitivity with up to 0.25 OD units per Gy change at 672 nm at 100 kVp x-ray energy. Variations in dose sensitivity can be achieved by varying wavelength analysis.

Is light-emitting diode phototherapy (LED-LLLT) really effective?

PubMed Central

Kim, Won-Serk; Calderhead, R Glen

2011-01-01

Background: Low level light therapy (LLLT) has attracted attention in many clinical fields with a new generation of light-emitting diodes (LEDs) which can irradiate large targets. To pain control, the first main application of LLLT, have been added LED-LLLT in the accelerated healing of wounds, both traumatic and iatrogenic, inflammatory acne and the patient-driven application of skin rejuvenation. Rationale and Applications: The rationale behind LED-LLLT is underpinned by the reported efficacy of LED-LLLT at a cellular and subcellular level, particularly for the 633 nm and 830 nm wavelengths, and evidence for this is presented. Improved blood flow and neovascularization are associated with 830 nm. A large variety of cytokines, chemokines and macromolecules can be induced by LED phototherapy. Among the clinical applications, non-healing wounds can be healed through restoring the collagenesis/collagenase imbalance in such examples, and ‘normal’ wounds heal faster and better. Pain, including postoperative pain, postoperative edema and many types of inflammation can be significantly reduced. Experimental and clinical evidence: Some personal examples of evidence are offered by the first author, including controlled animal models demonstrating the systemic effect of 830 nm LED-LLLT on wound healing and on induced inflammation. Human patients are presented to illustrate the efficacy of LED phototherapy on treatment-resistant inflammatory disorders. Conclusions: Provided an LED phototherapy system has the correct wavelength for the target cells, delivers an appropriate power density and an adequate energy density, then it will be at least partly, if not significantly, effective. The use of LED-LLLT as an adjunct to conventional surgical or nonsurgical indications is an even more exciting prospect. LED-LLLT is here to stay. PMID:24155530

Enhanced red fluorescence in Sr2Si1-xGexO4:Eu3+ phosphors by the substitution of Si by Ge for white light emitting diodes

NASA Astrophysics Data System (ADS)

Huang, Lihui; Xu, Shiqing; Guo, Meiquan; Wang, Chenyue; Hua, Youjie; Zhao, Shilong; Deng, Degang; Wang, Huanping; Jia, Guohua

2012-07-01

Eu3+-doped Sr2Si1-xGexO4 (x=0-1) phosphors have been prepared by the high temperature solid-state reaction method. The luminescent properties of these phosphors were investigated. Red fluorescence of Eu3+ is enhanced gradually in the samples with increasing substitution of Si by Ge upon the excitation of 393 nm light. The intensity is increased by 50% with full substitution of Si by Ge. These results are originated from the structural changes and the phonon energy reduction in the samples due to the substitution of Si by Ge. The CIE chromaticity coordinates of the phosphors vary slightly around (0.62, 0.37) and all are in the red color region. The results indicate that these phosphors could be promising red phosphors for white light emitting diodes.

High-Brightness Blue and White LEDs based on Inorganic Perovskite Nanocrystals and their Composites

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yao, En -Ping; Yang, Zhanlue; Meng, Lei

Inorganic metal halide perovskite nanocrystals (NCs) have been employed universally in light-emitting applications during the past two years. Here, blue-emission (≈ 470 nm) Cs-based perovskite NCs are derived by directly mixing synthesized bromide and chloride nanocrystals with a weight ratio of 2:1. High-brightness blue perovskite light-emitting diodes (PeLEDs) are obtained by controlling the grain size of the perovskite films. Moreover, a white PeLED is demonstrated for the first time by blending orange polymer materials with the blue perovskite nanocrystals as the active layer. Exciton transfer from the blue nanocrystals to the orange polymers via Forster or Dexter energy transfer ismore » analyzed through time resolved photoluminescence. In conclusion, by tuning the ratio between the perovskite nanocrystals and polymers, pure white light is achieved with the a CIE coordinate at (0.33,0.34).« less

[LED lights in dermatology].

PubMed

Noé, C; Pelletier-Aouizerate, M; Cartier, H

2017-04-01

The use in dermatology of light-emitting diodes (LEDs) continues to be surrounded by controversy. This is due mainly to poor knowledge of the physicochemical phases of a wide range of devices that are difficult to compare to one another, and also to divergences between irrefutable published evidence either at the level of in vitro studies or at the cellular level, and discordant clinical results in a variety of different indications: rejuvenation, acne, wound healing, leg ulcers, and cutaneous inflammatory or autoimmune processes. Therapeutic LEDs can emit wavelengths ranging from the ultraviolet, through visible light, to the near infrared (247-1300 nm), but only certain bands have so far demonstrated any real value. We feel certain that if this article remains factual, then readers will have a different, or at least more nuanced, opinion concerning the use of such LED devices in dermatology. Copyright © 2016 Elsevier Masson SAS. All rights reserved.

High-Brightness Blue and White LEDs based on Inorganic Perovskite Nanocrystals and their Composites

DOE PAGES

Yao, En -Ping; Yang, Zhanlue; Meng, Lei; ...

2017-04-10

Inorganic metal halide perovskite nanocrystals (NCs) have been employed universally in light-emitting applications during the past two years. Here, blue-emission (≈ 470 nm) Cs-based perovskite NCs are derived by directly mixing synthesized bromide and chloride nanocrystals with a weight ratio of 2:1. High-brightness blue perovskite light-emitting diodes (PeLEDs) are obtained by controlling the grain size of the perovskite films. Moreover, a white PeLED is demonstrated for the first time by blending orange polymer materials with the blue perovskite nanocrystals as the active layer. Exciton transfer from the blue nanocrystals to the orange polymers via Forster or Dexter energy transfer ismore » analyzed through time resolved photoluminescence. In conclusion, by tuning the ratio between the perovskite nanocrystals and polymers, pure white light is achieved with the a CIE coordinate at (0.33,0.34).« less